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Sample records for high-performance organic transistors

  1. High-performance vertical organic transistors.

    Kleemann, Hans; Günther, Alrun A; Leo, Karl; Lüssem, Björn

    2013-11-11

    Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. High-Performance Vertical Organic Electrochemical Transistors.

    Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

    2018-02-01

    Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. High performance low voltage organic field effect transistors on plastic substrate for amplifier circuits

    Houin, G.J.R.; Duez, F.; Garcia, L.; Cantatore, E.; Torricelli, F.; Hirsch, L.; Belot, D.; Pellet, C.; Abbas, M.

    2016-01-01

    The high performance air stable organic semiconductor small molecule dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT) was chosen as active layer for field effect transistors built to realize flexible amplifier circuits. Initial device on rigid Si/SiO2 substrate showed appreciable performance

  4. Development of high-performance printed organic field-effect transistors and integrated circuits.

    Xu, Yong; Liu, Chuan; Khim, Dongyoon; Noh, Yong-Young

    2015-10-28

    Organic electronics is regarded as an important branch of future microelectronics especially suited for large-area, flexible, transparent, and green devices, with their low cost being a key benefit. Organic field-effect transistors (OFETs), the primary building blocks of numerous expected applications, have been intensively studied, and considerable progress has recently been made. However, there are still a number of challenges to the realization of high-performance OFETs and integrated circuits (ICs) using printing technologies. Therefore, in this perspective article, we investigate the main issues concerning developing high-performance printed OFETs and ICs and seek strategies for further improvement. Unlike many other studies in the literature that deal with organic semiconductors (OSCs), printing technology, and device physics, our study commences with a detailed examination of OFET performance parameters (e.g., carrier mobility, threshold voltage, and contact resistance) by which the related challenges and potential solutions to performance development are inspected. While keeping this complete understanding of device performance in mind, we check the printed OFETs' components one by one and explore the possibility of performance improvement regarding device physics, material engineering, processing procedure, and printing technology. Finally, we analyze the performance of various organic ICs and discuss ways to optimize OFET characteristics and thus develop high-performance printed ICs for broad practical applications.

  5. Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

    Jaekyun Kim

    2015-10-01

    Full Text Available A low-temperature solution-processed high-k gate dielectric layer for use in a high-performance solution-processed semiconducting polymer organic thin-film transistor (OTFT was demonstrated. Photochemical activation of sol-gel-derived AlOx films under 150 °C permitted the formation of a dense film with low leakage and relatively high dielectric-permittivity characteristics, which are almost comparable to the results yielded by the conventionally used vacuum deposition and high temperature annealing method. Octadecylphosphonic acid (ODPA self-assembled monolayer (SAM treatment of the AlOx was employed in order to realize high-performance (>0.4 cm2/Vs saturation mobility and low-operation-voltage (<5 V diketopyrrolopyrrole (DPP-based OTFTs on an ultra-thin polyimide film (3-μm thick. Thus, low-temperature photochemically-annealed solution-processed AlOx film with SAM layer is an attractive candidate as a dielectric-layer for use in high-performance organic TFTs operated at low voltages.

  6. Vinyl Flanked Difluorobenzothiadiazole-Dithiophene Conjugated Polymer for High Performance Organic Field-Effect Transistors.

    Liang, Xianfeng; Sun, Wandong; Chen, Yanlin; Tan, Luxi; Cai, Zheng-Xu; Liu, Zitong; Wang, Lin; Li, Jing; Chen, Wei; Dong, Lichun

    2018-02-21

    Fluorine containing conjugated polymers have been widely applied in high performance organic solar cells, but their use in field-effect transistors is still quite limited. In this work, a conjugated polymer PTFBTV based on difluorobenzothiadiazole (DFBT) and dithiophene was synthesized, utilizing multiple vinylene as linkers. The polymer exhibits a relatively high hole mobility up to 2.0 cm(2) V-1 s(-1) compared with the reported DFBT-oligothiophene based polymers, yet its structural complexity is much simpler. The polymer thin film exhibits a typical 'face on' molecular orientation. A single crystal of its monomer revealed a non-covalent intramolecular contact between fluorine and the neighbouring proton, which strengthens the backbone co-planarity. Meanwhile an intermolecular F...F contact was also observed, which might cause rather scattered lamellar crystallinity for PTFBTV in the solid state.

  7. Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

    Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

    2011-08-01

    Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

  8. Doping Polymer Semiconductors by Organic Salts: Toward High-Performance Solution-Processed Organic Field-Effect Transistors.

    Hu, Yuanyuan; Rengert, Zachary D; McDowell, Caitlin; Ford, Michael J; Wang, Ming; Karki, Akchheta; Lill, Alexander T; Bazan, Guillermo C; Nguyen, Thuc-Quyen

    2018-04-24

    Solution-processed organic field-effect transistors (OFETs) were fabricated with the addition of an organic salt, trityl tetrakis(pentafluorophenyl)borate (TrTPFB), into thin films of donor-acceptor copolymer semiconductors. The performance of OFETs is significantly enhanced after the organic salt is incorporated. TrTPFB is confirmed to p-dope the organic semiconductors used in this study, and the doping efficiency as well as doping physics was investigated. In addition, systematic electrical and structural characterizations reveal how the doping enhances the performance of OFETs. Furthermore, it is shown that this organic salt doping method is feasible for both p- and n-doping by using different organic salts and, thus, can be utilized to achieve high-performance OFETs and organic complementary circuits.

  9. Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors

    Nielsen, Christian B.

    2016-07-22

    The organic electrochemical transistor (OECT), capable of transducing small ionic fluxes into electronic signals in an aqueous envi-ronment, is an ideal device to utilize in bioelectronic applications. Currently, most OECTs are fabricated with commercially availa-ble conducting poly(3,4-ethylenedioxythiophene) (PEDOT)-based suspensions and are therefore operated in depletion mode. Here, we present a series of semiconducting polymers designed to elucidate important structure-property guidelines required for accumulation mode OECT operation. We discuss key aspects relating to OECT performance such as ion and hole transport, elec-trochromic properties, operational voltage and stability. The demonstration of our molecular design strategy is the fabrication of accumulation mode OECTs that clearly outperform state-of-the-art PEDOT based devices, and show stability under aqueous oper-ation without the need for formulation additives and cross-linkers.

  10. High performance organic transistor active-matrix driver developed on paper substrate

    Peng, Boyu; Ren, Xiaochen; Wang, Zongrong; Wang, Xinyu; Roberts, Robert C.; Chan, Paddy K. L.

    2014-09-01

    The fabrication of electronic circuits on unconventional substrates largely broadens their application areas. For example, green electronics achieved through utilization of biodegradable or recyclable substrates, can mitigate the solid waste problems that arise at the end of their lifespan. Here, we combine screen-printing, high precision laser drilling and thermal evaporation, to fabricate organic field effect transistor (OFET) active-matrix (AM) arrays onto standard printer paper. The devices show a mobility and on/off ratio as high as 0.56 cm2V-1s-1 and 109 respectively. Small electrode overlap gives rise to a cut-off frequency of 39 kHz, which supports that our AM array is suitable for novel practical applications. We demonstrate an 8 × 8 AM light emitting diode (LED) driver with programmable scanning and information display functions. The AM array structure has excellent potential for scaling up.

  11. Design strategy for air-stable organic semiconductors applicable to high-performance field-effect transistors

    Kazuo Takimiya et al

    2007-01-01

    Electronic structure of air-stable, high-performance organic field-effect transistor (OFET) material, 2,7-dipheneyl[1]benzothieno[3,2-b]benzothiophene (DPh-BTBT), was discussed based on the molecular orbital calculations. It was suggested that the stability is originated from relatively low-lying HOMO level, despite the fact that the molecule contains highly π-extended aromatic core ([1]benzothieno[3,2-b]benzothiophene, BTBT) with four fused aromatic rings like naphthacene. This is rationaliz...

  12. Surface-directed molecular assembly of pentacene on monolayer graphene for high-performance organic transistors.

    Lee, Wi Hyoung; Park, Jaesung; Sim, Sung Hyun; Lim, Soojin; Kim, Kwang S; Hong, Byung Hee; Cho, Kilwon

    2011-03-30

    Organic electronic devices that use graphene electrodes have received considerable attention because graphene is regarded as an ideal candidate electrode material. Transfer and lithographic processes during fabrication of patterned graphene electrodes typically leave polymer residues on the graphene surfaces. However, the impact of these residues on the organic semiconductor growth mechanism on graphene surface has not been reported yet. Here, we demonstrate that polymer residues remaining on graphene surfaces induce a stand-up orientation of pentacene, thereby controlling pentacene growth such that the molecular assembly is optimal for charge transport. Thus, pentacene field-effect transistors (FETs) using source/drain monolayer graphene electrodes with polymer residues show a high field-effect mobility of 1.2 cm(2)/V s. In contrast, epitaxial growth of pentacene having molecular assembly of lying-down structure is facilitated by π-π interaction between pentacene and the clean graphene electrode without polymer residues, which adversely affects lateral charge transport at the interface between electrode and channel. Our studies provide that the obtained high field-effect mobility in pentacene FETs using monolayer graphene electrodes arises from the extrinsic effects of polymer residues as well as the intrinsic characteristics of the highly conductive, ultrathin two-dimensional monolayer graphene electrodes.

  13. High performance unipolar inverters by utilizing organic field-effect transistors with ultraviolet/ozone treated polystyrene dielectric

    Huang, Wei; Yu, Xinge; Fan, Huidong; Yu, Junsheng

    2014-01-01

    High performance unipolar inverters based on a significant variation of threshold voltage (V th ) of organic field-effect transistors (OFETs), which was realized by introducing UV/ozone (UVO) treatment to polystyrene (PS) dielectric, were fabricated. A controllable V th shift of more than 10 V was obtained in the OFETs by adjusting the UVO treating time, and the unipolar inverters exhibited inverting voltage near 1/2 driving voltage and a noise margin of more than 70% of ideal value. From the analysis of scanning electron microscopy, atom force microscopy, and X-ray photoelectron spectroscopy, the dramatic controllable V th of OFETs, which played a key role in high performance unipolar inverters, was attributed to the newly generated oxygen functional groups in the PS dielectric induced by UVO treatment.

  14. Solution-processable precursor route for fabricating ultrathin silica film for high performance and low voltage organic transistors

    Shujing Guo; Liqiang Li; Zhongwu Wang; Zeyang Xu; Shuguang Wang; Kunjie Wu; Shufeng Chen; Zongbo Zhang; Caihong Xu; Wenfeng Qiu

    2017-01-01

    Silica is one of the most commonly used materials for dielectric layer in organic thin-film transistors due to its excellent stability,excellent electrical properties,mature preparation process,and good compatibility with organic semiconductors.However,most of conventional preparation methods for silica film are generally performed at high temperature and/or high vacuum.In this paper,we introduce a simple solution spin-coating method to fabricate silica thin film from precursor route,which possesses a low leakage current,high capacitance,and low surface roughness.The silica thin film can be produced in the condition of low temperature and atmospheric environment.To meet various demands,the thickness of film can be adjusted by means of preparation conditions such as the speed of spin-coating and the concentration of solution.The p-type and n-type organic field effect transistors fabricated by using this film as gate electrodes exhibit excellent electrical performance including low voltage and high performance.This method shows great potential for industrialization owing to its characteristic of low consumption and energy saving,time-saving and easy to operate.

  15. High-Performance Solution-Deposited Ambipolar Organic Transistors Based on Terrylene Diimides

    Liu, Chuan; Liu, Zhihong; Lemke, Henrik T.

    2010-01-01

    The thin film transistor characteristics of a soluble molecular semiconductor, terrylene tetracarboxdiimide (TDI), a homologue of perylene tetracarboxdiimide (PDI), have been investigated. In a bottom-gate device structure with benzocyclobutene gate dielectric, n-type behavior with electron...... mobility of 1.1 × 10−2 cm2 V−1 s−1 has been observed after thermal annealing. When applied in the top-gate structure with a polycyclohexylethylene-based gate dielectric, TDI devices exhibit ambipolar transport with electron and hole mobility of 7.2 × 10−3 cm2 V−1 s−1 and 2.2 × 10−3 cm2 V−1 s−1 respectively...

  16. Design strategy for air-stable organic semiconductors applicable to high-performance field-effect transistors

    Kazuo Takimiya et al

    2007-01-01

    Full Text Available Electronic structure of air-stable, high-performance organic field-effect transistor (OFET material, 2,7-dipheneyl[1]benzothieno[3,2-b]benzothiophene (DPh-BTBT, was discussed based on the molecular orbital calculations. It was suggested that the stability is originated from relatively low-lying HOMO level, despite the fact that the molecule contains highly π-extended aromatic core ([1]benzothieno[3,2-b]benzothiophene, BTBT with four fused aromatic rings like naphthacene. This is rationalized by the consideration that the BTBT core is not isoelectronic with naphthacene but with chrysene, a cata-condensed phene with four benzene rings. It is well known that the acene-type compound is unstable among its structural isomers with the same number of benzene rings. Therefore, polycyclic aromatic compounds possessing the phene-substructure will be good candidates for stable organic semiconductors. Considering synthetic easiness, we suggest that the BTBT-substructure is the molecular structure of choice for developing air-stable organic semiconductors.

  17. Novel organic semiconductors and dielectric materials for high performance and low-voltage organic thin-film transistors

    Yoon, Myung-Han

    Two novel classes of organic semiconductors based on perfluoroarene/arene-modified oligothiophenes and perfluoroacyl/acyl-derivatized quaterthiophens are developed. The frontier molecular orbital energies of these compounds are studied by optical spectroscopy and electrochemistry while solid-state/film properties are investigated by thermal analysis, x-ray diffraction, and scanning electron microscopy. Organic thin film transistors (OTFTs) performance parameters are discussed in terms of the interplay between semiconductor molecular energetics and film morphologies/microstructures. For perfluoroarene-thiophene oligomer systems, majority charge carrier type and mobility exhibit a strong correlation with the regiochemistry of perfluoroarene incorporation. In quaterthiophene-based semiconductors, carbonyl-functionalization allows tuning of the majority carrier type from p-type to ambipolar and to n-type. In situ conversion of a p-type semiconducting film to n-type film is also demonstrated. Very thin self-assembled or spin-on organic dielectric films have been integrated into OTFTs to achieve 1 - 2 V operating voltages. These new dielectrics are deposited either by layer-by-layer solution phase deposition of molecular precursors or by spin-coating a mixture of polymer and crosslinker, resulting in smooth and virtually pinhole-free thin films having exceptionally large capacitances (300--700 nF/cm2) and low leakage currents (10 -9 - 10-7 A/cm2). These organic dielectrics are compatible with various vapor- or solution-deposited p- and n-channel organic semiconductors. Furthermore, it is demonstrated that spin-on crosslinked-polymer-blend dielectrics can be employed for large-area/patterned electronics, and complementary inverters. A general approach for probing semiconductor-dielectric interface effects on OTFT performance parameters using bilayer gate dielectrics is presented. Organic semiconductors having p-, n-type, or ambipolar majority charge carriers are grown on

  18. High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

    Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

    2017-08-01

    Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

  19. An Alternating 5,5-Dimethylcyclopentadiene-based Copolymer prepared at Room Temperature for High Performance Organic Thin Film Transistors

    Fei, Zhuping; Chen, Lei; Han, Yang; Gann, Eliot; Chesman, Anthony; McNeill, Christopher R.; Anthopoulos, Thomas D.; Heeney, Martin; Pietrangelo, Agostino

    2017-01-01

    We report that the inclusion of non-aromatic 5,5-dimethylcyclopentadiene monomer into a conjugated backbone is an attractive strategy to high performance semiconducting polymers. The use of this monomer enables a room temperature Suzuki copolymerization with a diketopyrrolopyrrole comono-mer to afford a highly soluble, high molecular weight material. The resulting low band gap polymer exhibits excellent photo and thermal stability, and despite a large π-π stacking distance of 4.26 Å, it demonstrates excellent performance in thin-film transistor devices.

  20. An Alternating 5,5-Dimethylcyclopentadiene-based Copolymer prepared at Room Temperature for High Performance Organic Thin Film Transistors

    Fei, Zhuping

    2017-06-05

    We report that the inclusion of non-aromatic 5,5-dimethylcyclopentadiene monomer into a conjugated backbone is an attractive strategy to high performance semiconducting polymers. The use of this monomer enables a room temperature Suzuki copolymerization with a diketopyrrolopyrrole comono-mer to afford a highly soluble, high molecular weight material. The resulting low band gap polymer exhibits excellent photo and thermal stability, and despite a large π-π stacking distance of 4.26 Å, it demonstrates excellent performance in thin-film transistor devices.

  1. Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

    He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

    2016-10-01

    Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

  2. Growth of large-size-two-dimensional crystalline pentacene grains for high performance organic thin film transistors

    Chuan Du

    2012-06-01

    Full Text Available New approach is presented for growth of pentacene crystalline thin film with large grain size. Modification of dielectric surfaces using a monolayer of small molecule results in the formation of pentacene thin films with well ordered large crystalline domain structures. This suggests that pentacene molecules may have significantly large diffusion constant on the modified surface. An average hole mobility about 1.52 cm2/Vs of pentacene based organic thin film transistors (OTFTs is achieved with good reproducibility.

  3. Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

    Hellstrom, Sondra L.

    2010-07-12

    We report patterned deposition of carbon nanotube/conjugated polymer composites from solution with high nanotube densities and excellent feature resolution. Such composites are suited for use as electrodes in high-performance transistors of pentacene and C60, with bottom-contact mobilities of ?0.5 and ?1 cm2 V-1 s-1, respectively. This represents a clear step towards development of inexpensive, high-performance all-organic circuits. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Driving High-Performance n- and p-type Organic Transistors with Carbon Nanotube/Conjugated Polymer Composite Electrodes Patterned Directly from Solution

    Hellstrom, Sondra L.; Jin, Run Zhi; Stoltenberg, Randall M.; Bao, Zhenan

    2010-01-01

    We report patterned deposition of carbon nanotube/conjugated polymer composites from solution with high nanotube densities and excellent feature resolution. Such composites are suited for use as electrodes in high-performance transistors

  5. Metal-oxide assisted surface treatment of polyimide gate insulators for high-performance organic thin-film transistors.

    Kim, Sohee; Ha, Taewook; Yoo, Sungmi; Ka, Jae-Won; Kim, Jinsoo; Won, Jong Chan; Choi, Dong Hoon; Jang, Kwang-Suk; Kim, Yun Ho

    2017-06-14

    We developed a facile method for treating polyimide-based organic gate insulator (OGI) surfaces with self-assembled monolayers (SAMs) by introducing metal-oxide interlayers, called the metal-oxide assisted SAM treatment (MAST). To create sites for surface modification with SAM materials on polyimide-based OGI (KPI) surfaces, the metal-oxide interlayer, here amorphous alumina (α-Al 2 O 3 ), was deposited on the KPI gate insulator using spin-coating via a rapid sol-gel reaction, providing an excellent template for the formation of a high-quality SAM with phosphonic acid anchor groups. The SAM of octadecylphosphonic acid (ODPA) was successfully treated by spin-coating onto the α-Al 2 O 3 -deposited KPI film. After the surface treatment by ODPA/α-Al 2 O 3 , the surface energy of the KPI thin film was remarkably decreased and the molecular compatibility of the film with an organic semiconductor (OSC), 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-C 10 ), was increased. Ph-BTBT-C 10 molecules were uniformly deposited on the treated gate insulator surface and grown with high crystallinity, as confirmed by atomic force microscopy (AFM) and X-ray diffraction (XRD) analysis. The mobility of Ph-BTBT-C 10 thin-film transistors (TFTs) was approximately doubled, from 0.56 ± 0.05 cm 2 V -1 s -1 to 1.26 ± 0.06 cm 2 V -1 s -1 , after the surface treatment. The surface treatment of α-Al 2 O 3 and ODPA significantly decreased the threshold voltage from -21.2 V to -8.3 V by reducing the trap sites in the OGI and improving the interfacial properties with the OSC. We suggest that the MAST method for OGIs can be applied to various OGI materials lacking reactive sites using SAMs. It may provide a new platform for the surface treatment of OGIs, similar to that of conventional SiO 2 gate insulators.

  6. High-performance semiconductors based on oligocarbazole–thiophene derivatives for solution-fabricated organic field-effect transistors

    Chang, Gung-Pei; Hsieh, Kuo-Huang, E-mail: khhsieh@ntu.edu.tw

    2013-01-01

    A series of oligocarbazole–thiophenes based on a constant conjugate backbone (carbazole–bithiophene–carbazole) with various n-alkyl chain lengths was prepared for application to organic field-effect transistors (OFETs). The lengths of the n-alkyl substitutions attached on 9-position of carbazole moieties were methyl (CCzT2), hexyl (C6CzT2), dodecyl (C12CzT2), and octadecyl (C18CzT2), called CxCzT2. Variations of n-alkyl chain lengths are proposed to figure out the optimization of OFET performance via solution fabrication of the active layer. Before fabricating OFET devices, the thermal, optical, and electrochemical properties of CxCzT2 were fully characterized with thermogravimetric analysis, differential scanning calorimetry, ultraviolet–visible spectroscopy, and cyclic voltammetry to realize the relationships of the structure to the properties. After fabricating CxCzT2 on Si/SiO{sub 2} substrates via solution casting, the thin film morphologies were also studied with polarizing optical microscopy, atomic force microscopy, and X-ray diffraction to investigate the structural relationship to OFET performance. A higher hole mobility was observed with C12CzT2 (3.6 × 10{sup −2} cm{sup 2} V{sup −1} s{sup −1}) due to its liquid crystal properties, and the hole mobility could be further improved to 1.2 × 10{sup −1} cm{sup 2} V{sup −1} s{sup −1} by the introduction of a phenyl-self-assembled monolayer on the Si/SiO{sub 2} substrates. The excellent OFET performances of C12CzT2 by solution–fabrication could be considered as a promising candidate for high-end OFET application. - Highlights: ► These oligomeric semiconductors were synthesized rapidly. ► The thermal, optical, and electrochemical properties were fully investigated. ► The liquid crystal properties can be obtained via alkyl chain length adjustment. ► These oligomeric semiconductors can be solution-fabricated. ► One of these oligomeric semiconductors yields high field-effect hole

  7. Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors.

    Song, Li; Hu, Yongsheng; Liu, Zheqin; Lv, Ying; Guo, Xiaoyang; Liu, Xingyuan

    2017-01-25

    The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

  8. High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

    Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

    2014-01-01

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

  9. Doped Organic Transistors.

    Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

    2016-11-23

    Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

  10. Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

    Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

    2017-03-22

    A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

  11. Organic electrochemical transistors

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Ró isí n M.; Berggren, Magnus; Malliaras, George G.

    2018-01-01

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume

  12. Wavy channel transistor for area efficient high performance operation

    Fahad, Hossain M.

    2013-04-05

    We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device architecture is capable of high performance operation compared to conventional FinFETs with comparatively higher area efficiency and lower chip latency as well as lower power consumption.

  13. Vertical organic transistors.

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-11-11

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

  14. High-Performance n-Channel Organic Transistors Using High-Molecular-Weight Electron-Deficient Copolymers and Amine-Tailed Self-Assembled Monolayers.

    Wang, Yang; Hasegawa, Tsukasa; Matsumoto, Hidetoshi; Mori, Takehiko; Michinobu, Tsuyoshi

    2018-03-01

    While high-performance p-type semiconducting polymers are widely reported, their n-type counterparts are still rare in terms of quantity and quality. Here, an improved Stille polymerization protocol using chlorobenzene as the solvent and palladium(0)/copper(I) as the catalyst is developed to synthesize high-quality n-type polymers with number-average molecular weight up to 10 5 g mol -1 . Furthermore, by sp 2 -nitrogen atoms (sp 2 -N) substitution, three new n-type polymers, namely, pBTTz, pPPT, and pSNT, are synthesized, and the effect of different sp 2 -N substitution positions on the device performances is studied for the first time. It is found that the incorporation of sp 2 -N into the acceptor units rather than the donor units results in superior crystalline microstructures and higher electron mobilities. Furthermore, an amine-tailed self-assembled monolayer (SAM) is smoothly formed on a Si/SiO 2 substrate by a simple spin-coating technique, which can facilitate the accumulation of electrons and lead to more perfect unipolar n-type transistor performances. Therefore, a remarkably high unipolar electron mobility up to 5.35 cm 2 V -1 s -1 with a low threshold voltage (≈1 V) and high on/off current ratio of ≈10 7 is demonstrated for the pSNT-based devices, which are among the highest values for unipolar n-type semiconducting polymers. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Chalcogenophene comonomer comparison in small band gap diketopyrrolopyrrole-based conjugated polymers for high-performing field-effect transistors and organic solar cells

    Ashraf, Raja Shahid

    2015-01-28

    The design, synthesis, and characterization of a series of diketopyrrolopyrrole-based copolymers with different chalcogenophene comonomers (thiophene, selenophene, and tellurophene) for use in field-effect transistors and organic photovoltaic devices are reported. The effect of the heteroatom substitution on the optical, electrochemical, and photovoltaic properties and charge carrier mobilities of these polymers is discussed. The results indicate that by increasing the size of the chalcogen atom (S < Se < Te), polymer band gaps are narrowed mainly due to LUMO energy level stabilization. In addition, the larger heteroatomic size also increases intermolecular heteroatom-heteroatom interactions facilitating the formation of polymer aggregates leading to enhanced field-effect mobilities of 1.6 cm2/(V s). Bulk heterojunction solar cells based on the chalcogenophene polymer series blended with fullerene derivatives show good photovoltaic properties, with power conversion efficiencies ranging from 7.1-8.8%. A high photoresponse in the near-infrared (NIR) region with excellent photocurrents above 20 mA cm-2 was achieved for all polymers, making these highly efficient low band gap polymers promising candidates for use in tandem solar cells. (Graph Presented).

  16. Vertical organic transistors

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-01-01

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted. (topical review)

  17. Organic electrochemical transistors

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Róisín M.; Berggren, Magnus; Malliaras, George G.

    2018-02-01

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  18. Organic electrochemical transistors

    Rivnay, Jonathan

    2018-01-16

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  19. Liquid crystals for organic transistors (Conference Presentation)

    Hanna, Jun-ichi; Iino, Hiroaki

    2016-09-01

    Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

  20. Interface engineering in high-performance low-voltage organic thin-film transistors based on 2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes.

    Amin, Atefeh Y; Reuter, Knud; Meyer-Friedrichsen, Timo; Halik, Marcus

    2011-12-20

    We investigated two different (2,7-dialkyl-[1]benzothieno[3,2-b][1]benzothiophenes; C(n)-BTBT-C(n), where n = 12 or 13) semiconductors in low-voltage operating thin-film transistors. By choosing functional molecules in nanoscaled hybrid dielectric layers, we were able to tune the surface energy and improve device characteristics, such as leakage current and hysteresis. The dipolar nature of the self-assembled molecules led to a shift in the threshold voltage. All devices exhibited high charge carrier mobilities of 0.6-7.0 cm(2) V(-1) s(-1). The thin-film morphology of BTBT was studied by means of atomic force microscopy (AFM), presented a dependency upon the surface energy of the self-assembled monolayer (SAM) hybrid dielectrics but not upon the device performance. The use of C(13)-BTBT-C(13) on hybrid dielectrics of AlO(x) and a F(15)C(18)-phosphonic acid monolayer led to devices with a hole mobility of 1.9 cm(2) V(-1) s(-1) at 3 V, on/off ratio of 10(5), small device-device variation of mobility, and a threshold voltage of only -0.9 V, thus providing excellent characteristics for further integration. © 2011 American Chemical Society

  1. Organic semiconductors for organic field-effect transistors

    Yamashita, Yoshiro

    2009-01-01

    The advantages of organic field-effect transistors (OFETs), such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed. (topical review)

  2. Organic semiconductors for organic field-effect transistors

    Yoshiro Yamashita

    2009-01-01

    Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

  3. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S.

    2014-02-01

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ˜50 s-SWCNTs μm-1. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 107 and 46 cm2 V-1 s-1, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm-1 and the on/off ratio is 4 × 105. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.

  4. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S.

    2014-01-01

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm −1 . At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10 7 and 46 cm 2  V −1  s −1 , respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm −1 and the on/off ratio is 4 × 10 5 . These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices

  5. High performance transistors via aligned polyfluorene-sorted carbon nanotubes

    Brady, Gerald J.; Joo, Yongho; Singha Roy, Susmit; Gopalan, Padma; Arnold, Michael S., E-mail: msarnold@wisc.edu [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1509 University Avenue, Madison, Wisconsin 53706 (United States)

    2014-02-24

    We evaluate the performance of exceptionally electronic-type sorted, semiconducting, aligned single-walled carbon nanotubes (s-SWCNTs) in field effect transistors (FETs). High on-conductance and high on/off conductance modulation are simultaneously achieved at channel lengths which are both shorter and longer than individual s-SWCNTs. The s-SWCNTs are isolated from heterogeneous mixtures using a polyfluorene-derivative as a selective agent and aligned on substrates via dose-controlled, floating evaporative self-assembly at densities of ∼50 s-SWCNTs μm{sup −1}. At a channel length of 9 μm the s-SWCNTs percolate to span the FET channel, and the on/off ratio and charge transport mobility are 2.2 × 10{sup 7} and 46 cm{sup 2} V{sup −1} s{sup −1}, respectively. At a channel length of 400 nm, a large fraction of the s-SWCNTs directly span the channel, and the on-conductance per width is 61 μS μm{sup −1} and the on/off ratio is 4 × 10{sup 5}. These results are considerably better than previous solution-processed FETs, which have suffered from poor on/off ratio due to spurious metallic nanotubes that bridge the channel. 4071 individual and small bundles of s-SWCNTs are tested in 400 nm channel length FETs, and all show semiconducting behavior, demonstrating the high fidelity of polyfluorenes as selective agents and the promise of assembling s-SWCNTs from solution to create high performance semiconductor electronic devices.

  6. Tuning crystal polymorphs of a Π-extended tetrathiafulvalene-based cruciform molecule towards high-performance organic field-effect transistors

    Feng, Linlin; Dong, Huanli; Li, Qingyuan

    2017-01-01

    It is a common phenomenon for organic semiconductors to crystallize in two or more polymorphs, leading to various molecular packings and different charge transport properties. Therefore, it is a crucial issue of tuning molecular crystal polymorphs (i.e., adjusting the same molecule with different......)-based cruciform molecule, named as IF-TTF. The charge carrier mobility of the α-phase IF-TTF crystals was more than one order of magnitude higher than that of β-phase crystals, suggesting the importance of reasonably tuning molecular packing in solid state for the improvement of charge transport in organic...... semiconductors...

  7. Wavy channel transistor for area efficient high performance operation

    Fahad, Hossain M.; Hussain, Aftab M.; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    We report a wavy channel FinFET like transistor where the channel is wavy to increase its width without any area penalty and thereby increasing its drive current. Through simulation and experiments, we show the effectiveness of such device

  8. Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors.

    Ebata, Hideaki; Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Yui, Tatsuto

    2007-12-26

    2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).

  9. Graphene as tunable contact for high performance thin film transistor

    Liu, Yuan

    performance and mechanical robustness. By using the graphene as a work-function tunable contact for amorphous indium gallium zinc oxide (IGZO) thin film, the vertical current flow across the graphene-IGZO junction can be effectively modulated by an external gate potential to enable VTFTs with a highest on-off ratio exceeding 105. The unique vertical transistor architecture can readily enable ultrashort channel devices with very high delivering current and exceptional mechanical flexibility. Furthermore, I will, demonstrate a new design strategy for vertical OTFT with ultra-short channel length without using conventional high-resolution lithography process. They can deliver a high current density over 1.8 A/ cm2 and thus enable a high cutoff frequency devices (~ 0.4 MHz) comparable with the ultra-short channel organic transistors. Importantly, with unique vertical architecture, the entire organic channel material is sandwiched between the source and drain electrodes and is thus naturally protected to ensure excellent air-stability. Finally I will present a new strategy by using graphene as the back electrodes to achieve Ohmic contact to MoS2. With a finite density of states, the Fermi level of graphene can be readily tuned by a gate potential to enable a nearly perfect band alignment with MoS2. For the first time, a transparent contact to MoS2 is demonstrated with zero contact barrier and linear output behaviour at cryogenic temperatures (down to 1.9 K) for both monolayer and multilayer MoS2. Benefiting from the barrier-free transparent contacts, we show that a metal-insulator-transition (MIT) can be observed in a two-terminal MoS2 device, a phenomenon that could be easily masked by Schottky barriers found in conventional metal-contacted MoS2 devices. With further passivation by boron nitride (BN) encapsulation, we demonstrate a record-high extrinsic (two-terminal) field effect mobility up to 1300 cm2/V s in MoS2 at low temperature. These findings can open up exciting new

  10. High-Performance Solution-Processed Amorphous InGaZnO Thin Film Transistors with a Metal–Organic Decomposition Method

    Yingtao Xie

    2018-01-01

    Full Text Available A facile solution process was introduced for the preparation of IGZO thin films via a metal–organic decomposition (MOD method. The IGZO ink was synthesized by mixing the solutions of gallium acetylacetonate [Ga(C5H7O23], zinc acetylacetonate hydrate [Zn(C5H7O22·xH2O] dissolved in ethanol, and indium acetylacetonate [In(C5H7O23] dissolved in tetrahydrofuran (THF. The deposited films by spin-coating were annealed at moderate process temperature (≤500°C. The relationship between device performance and postannealing temperature was studied. The result demonstrated that mobility of IGZO TFT increased as the annealing temperature increased. Based on the analysis of O 1s statement, the annealing temperature can influence the number of oxygen vacancy to further affect the carrier centration. In addition, the IGZO TFT devices with various Ga molar ratios were compared to demonstrate the influence of the Ga addition. The result demonstrated that the saturated mobilities (μe decreased and VTH shifted to positive voltage as the Ga molar ratio was increased. It is likely that Ga can offer stronger chemical bonds between metal and oxygen that reduced the concentration of free carriers and thus help reducing VTH. As a result, the optimized performance of IGZO TFT with the mobility of 3.4 cm2V−1s−1 showed the MOD process was a promising approach.

  11. Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

    Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C P; Gelinck, Gerwin H; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

    2016-10-20

    Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

  12. Organic tunnel field effect transistors

    Tietze, Max Lutz; Lussem, Bjorn; Liu, Shiyi

    2017-01-01

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer

  13. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    Hanna, Amir; Hussain, Aftab M.; Omran, Hesham; Alshareef, Sarah; Salama, Khaled N.; Hussain, Muhammad Mustafa

    2015-01-01

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (Zn

  14. High transconductance organic electrochemical transistors

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-07-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

  15. High transconductance organic electrochemical transistors

    Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

    2013-01-01

    The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

  16. DEVICE TECHNOLOGY. Nanomaterials in transistors: From high-performance to thin-film applications.

    Franklin, Aaron D

    2015-08-14

    For more than 50 years, silicon transistors have been continuously shrunk to meet the projections of Moore's law but are now reaching fundamental limits on speed and power use. With these limits at hand, nanomaterials offer great promise for improving transistor performance and adding new applications through the coming decades. With different transistors needed in everything from high-performance servers to thin-film display backplanes, it is important to understand the targeted application needs when considering new material options. Here the distinction between high-performance and thin-film transistors is reviewed, along with the benefits and challenges to using nanomaterials in such transistors. In particular, progress on carbon nanotubes, as well as graphene and related materials (including transition metal dichalcogenides and X-enes), outlines the advances and further research needed to enable their use in transistors for high-performance computing, thin films, or completely new technologies such as flexible and transparent devices. Copyright © 2015, American Association for the Advancement of Science.

  17. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

    Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

    2012-01-01

    Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

  18. High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

    Cao, Yu; Che, Yuchi; Zhou, Chongwu, E-mail: chongwuz@usc.edu [Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States); Seo, Jung-Woo T.; Hersam, Mark C. [Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Gui, Hui [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States)

    2016-06-06

    In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.

  19. A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

    She, Xiao-Jian; Gustafsson, David; Sirringhaus, Henning

    2017-02-01

    A new device architecture for fast organic transistor memory is developed, based on a vertical organic transistor configuration incorporating high-performance ambipolar conjugated polymers and unipolar small molecules as the transport layers, to achieve reliable and fast programming and erasing of the threshold voltage shift in less than 200 ns. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Lateral and Vertical Organic Transistors

    Al-Shadeedi, Akram

    An extensive study has been performed to provide a better understanding of the operation principles of doped organic field-effect transistors (OFETs), organic p-i-n diodes, Schottky diodes, and organic permeable base transistors (OPBTs). This has been accomplished by a combination of electrical and structural characterization of these devices. The discussion of doped OFETs focuses on the shift of the threshold voltage due to increased doping concentrations and the generation and transport of minority charge carriers. Doping of pentacene OFETs is achieved by co-evaporation of pentacene with the n-dopant W2(hpp)4. It is found that pentacene thin film are efficiently doped and that a conductivity in the range of 2.6 x 10-6 S cm-1 for 1 wt% to 2.5 x 10-4 S cm-1 for 16 wt% is reached. It is shown that n-doped OFET consisting of an n-doped channel and n-doped contacts are ambipolar. This behavior is surprising, as n-doping the contacts should suppress direct injection of minority charge carriers (holes). It was proposed that minority charge carrier injection and hence the ambipolar characteristic of n-doped OFETs can be explained by Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. It is shown that the electric field in this layer is indeed in the range of the breakdown field of pentacene based p-i-n Zener homodiodes. Doping the channel has a profound influence on the onset voltage of minority (hole) conduction. The onset voltage can be shifted by lightly n-doping the channel. The shift of onset voltage can be explained by two mechanisms: first, due to a larger voltage that has to be applied to the gate in order to fully deplete the n-doped layer. Second, it can be attributed to an increase in hole trapping by inactive dopants. Moreover, it has been shown that the threshold voltage of majority (electron) conduction is shifted by an increase in the doping concentration, and that the ambipolar OFETs can be turned into unipolar OFETs at

  1. Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

    Hanna, Amir

    2015-12-04

    High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

  2. Analysing organic transistors based on interface approximation

    Akiyama, Yuto; Mori, Takehiko

    2014-01-01

    Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

  3. Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

    Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

    2018-01-01

    Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. The Influence of Morphology on High-Performance Polymer Field-Effect Transistors

    Tsao, Hoi Nok; Cho, Don; Andreasen, Jens Wenzel

    2009-01-01

    The influence of molecular packing on the performance of polymer organic field-effect transistors is illustrated in this work. Both close -stacking distance and long-range order are important for achieving high mobilities. By aligning the polymers from solution, long-range order is induced...

  5. High performance printed oxide field-effect transistors processed using photonic curing

    Garlapati, Suresh Kumar; Cadilha Marques, Gabriel; Gebauer, Julia Susanne; Dehm, Simone; Bruns, Michael; Winterer, Markus; Baradaran Tahoori, Mehdi; Aghassi-Hagmann, Jasmin; Hahn, Horst; Dasgupta, Subho

    2018-06-01

    Oxide semiconductors are highly promising candidates for the most awaited, next-generation electronics, namely, printed electronics. As a fabrication route for the solution-processed/printed oxide semiconductors, photonic curing is becoming increasingly popular, as compared to the conventional thermal curing method; the former offers numerous advantages over the latter, such as low process temperatures and short exposure time and thereby, high throughput compatibility. Here, using dissimilar photonic curing concepts (UV–visible light and UV-laser), we demonstrate facile fabrication of high performance In2O3 field-effect transistors (FETs). Beside the processing related issues (temperature, time etc.), the other known limitation of oxide electronics is the lack of high performance p-type semiconductors, which can be bypassed using unipolar logics from high mobility n-type semiconductors alone. Interestingly, here we have found that our chosen distinct photonic curing methods can offer a large variation in threshold voltage, when they are fabricated from the same precursor ink. Consequently, both depletion and enhancement-mode devices have been achieved which can be used as the pull-up and pull-down transistors in unipolar inverters. The present device fabrication recipe demonstrates fast processing of low operation voltage, high performance FETs with large threshold voltage tunability.

  6. Ultra-high gain diffusion-driven organic transistor

    Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

    2016-01-01

    Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

  7. Controllable film densification and interface flatness for high-performance amorphous indium oxide based thin film transistors

    Ou-Yang, Wei, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp; Mitoma, Nobuhiko; Kizu, Takio; Gao, Xu; Lin, Meng-Fang; Tsukagoshi, Kazuhito, E-mail: OUYANG.Wei@nims.go.jp, E-mail: TSUKAGOSHI.Kazuhito@nims.go.jp [International Center for Materials Nanoarchitectronics (WPI-MANA), National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Nabatame, Toshihide [MANA Foundry and MANA Advanced Device Materials Group, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

    2014-10-20

    To avoid the problem of air sensitive and wet-etched Zn and/or Ga contained amorphous oxide transistors, we propose an alternative amorphous semiconductor of indium silicon tungsten oxide as the channel material for thin film transistors. In this study, we employ the material to reveal the relation between the active thin film and the transistor performance with aid of x-ray reflectivity study. By adjusting the pre-annealing temperature, we find that the film densification and interface flatness between the film and gate insulator are crucial for achieving controllable high-performance transistors. The material and findings in the study are believed helpful for realizing controllable high-performance stable transistors.

  8. Organic tunnel field effect transistors

    Tietze, Max Lutz

    2017-06-29

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.

  9. Improving the Stability of High-Performance Multilayer MoS2 Field-Effect Transistors.

    Liu, Na; Baek, Jongyeol; Kim, Seung Min; Hong, Seongin; Hong, Young Ki; Kim, Yang Soo; Kim, Hyun-Suk; Kim, Sunkook; Park, Jozeph

    2017-12-13

    In this study, we propose a method for improving the stability of multilayer MoS 2 field-effect transistors (FETs) by O 2 plasma treatment and Al 2 O 3 passivation while sustaining the high performance of bulk MoS 2 FET. The MoS 2 FETs were exposed to O 2 plasma for 30 s before Al 2 O 3 encapsulation to achieve a relatively small hysteresis and high electrical performance. A MoO x layer formed during the plasma treatment was found between MoS 2 and the top passivation layer. The MoO x interlayer prevents the generation of excess electron carriers in the channel, owing to Al 2 O 3 passivation, thereby minimizing the shift in the threshold voltage (V th ) and increase of the off-current leakage. However, prolonged exposure of the MoS 2 surface to O 2 plasma (90 and 120 s) was found to introduce excess oxygen into the MoO x interlayer, leading to more pronounced hysteresis and a high off-current. The stable MoS 2 FETs were also subjected to gate-bias stress tests under different conditions. The MoS 2 transistors exhibited negligible decline in performance under positive bias stress, positive bias illumination stress, and negative bias stress, but large negative shifts in V th were observed under negative bias illumination stress, which is attributed to the presence of sulfur vacancies. This simple approach can be applied to other transition metal dichalcogenide materials to understand their FET properties and reliability, and the resulting high-performance hysteresis-free MoS 2 transistors are expected to open up new opportunities for the development of sophisticated electronic applications.

  10. A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

    Cho, Ah-Jin; Park, Kee Chan; Kwon, Jang-Yeon

    2015-01-01

    For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

  11. Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature

    Stork, J.M.C.; Harame, D.L.; Meyerson, B.S.; Nguyen, T.N.

    1989-01-01

    The base profile requirements of Si bipolar junction transistors (BJT's) high-performance operation at liquid-nitrogen temperature are examined. Measurements of thin epitaxial-base polysilicon-emitter n-p-n transistors with increasing base doping show the effects of bandgap narrowing, mobility changes, and carrier freezeout. At room temperature the collector current at low injection is proportional to the integrated base charge, independent of the impurity distribution. At temperatures below 150 Κ, however, minority injection is dominated by the peak base doping because of the greater effectiveness of bandgap narrowing. When the peak doping in the base approaches 10 19 cm -3 , the bandgap difference between emitter and base is sufficiently small that the current gain no longer monotonically decreases with lower temperature but instead shows a maximum as low as 180 Κ. The device design window appears limited at the low-current end by increased base-emitter leakage due to tunneling and by resistance control at the high-current end. Using the measured dc characteristics, circuit delay calculations are made to estimate the performance of an ECL ring oscillator at room and liquid-nitrogen temperatures. It is shown that if the base doping can be raised to 10 19 cm -3 while keeping the base thickness constant, the minimum delay at liquid nitrogen can approach the delay of optimized devices at room temperature

  12. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    Nayak, Pradipta K.

    2013-07-18

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  13. High performance In2O3 thin film transistors using chemically derived aluminum oxide dielectric

    Nayak, Pradipta K.; Hedhili, Mohamed N.; Cha, Dong Kyu; Alshareef, Husam N.

    2013-01-01

    We report high performance solution-deposited indium oxide thin film transistors with field-effect mobility of 127 cm2/Vs and an Ion/Ioff ratio of 106. This excellent performance is achieved by controlling the hydroxyl group content in chemically derived aluminum oxide (AlOx) thin-film dielectrics. The AlOx films annealed in the temperature range of 250–350 °C showed higher amount of Al-OH groups compared to the films annealed at 500 °C, and correspondingly higher mobility. It is proposed that the presence of Al-OH groups at the AlOx surface facilitates unintentional Al-doping and efficient oxidation of the indium oxide channel layer, leading to improved device performance.

  14. A High-Performance Optical Memory Array Based on Inhomogeneity of Organic Semiconductors.

    Pei, Ke; Ren, Xiaochen; Zhou, Zhiwen; Zhang, Zhichao; Ji, Xudong; Chan, Paddy Kwok Leung

    2018-03-01

    Organic optical memory devices keep attracting intensive interests for diverse optoelectronic applications including optical sensors and memories. Here, flexible nonvolatile optical memory devices are developed based on the bis[1]benzothieno[2,3-d;2',3'-d']naphtho[2,3-b;6,7-b']dithiophene (BBTNDT) organic field-effect transistors with charge trapping centers induced by the inhomogeneity (nanosprouts) of the organic thin film. The devices exhibit average mobility as high as 7.7 cm 2 V -1 s -1 , photoresponsivity of 433 A W -1 , and long retention time for more than 6 h with a current ratio larger than 10 6 . Compared with the standard floating gate memory transistors, the BBTNDT devices can reduce the fabrication complexity, cost, and time. Based on the reasonable performance of the single device on a rigid substrate, the optical memory transistor is further scaled up to a 16 × 16 active matrix array on a flexible substrate with operating voltage less than 3 V, and it is used to map out 2D optical images. The findings reveal the potentials of utilizing [1]benzothieno[3,2-b][1]benzothiophene (BTBT) derivatives as organic semiconductors for high-performance optical memory transistors with a facile structure. A detailed study on the charge trapping mechanism in the derivatives of BTBT materials is also provided, which is closely related to the nanosprouts formed inside the organic active layer. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

    Huang, Ruo-Gu; Tham, Douglas; Wang, Dunwei; Heath, James R.

    2011-01-01

    We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

  16. High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

    Huang, Ruo-Gu

    2011-06-24

    We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (~108), low drain-induced barrier lowering (~30 mV) and low subthreshold swing (~80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (~148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. © 2011 Tsinghua University Press and Springer-Verlag Berlin Heidelberg.

  17. Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

    Hanna, Amir; Sevilla, Galo T.; Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

    2014-01-01

    We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor

  18. High-performance indium gallium phosphide/gallium arsenide heterojunction bipolar transistors

    Ahmari, David Abbas

    Heterojunction bipolar transistors (HBTs) have demonstrated the high-frequency characteristics as well as the high linearity, gain, and power efficiency necessary to make them attractive for a variety of applications. Specific applications for which HBTs are well suited include amplifiers, analog-to-digital converters, current sources, and optoelectronic integrated circuits. Currently, most commercially available HBT-based integrated circuits employ the AlGaAs/GaAs material system in applications such as a 4-GHz gain block used in wireless phones. As modern systems require higher-performance and lower-cost devices, HBTs utilizing the newer, InGaP/GaAs and InP/InGaAs material systems will begin to dominate the HBT market. To enable the widespread use of InGaP/GaAs HBTs, much research on the fabrication, performance, and characterization of these devices is required. This dissertation will discuss the design and implementation of high-performance InGaP/GaAs HBTs as well as study HBT device physics and characterization.

  19. Temporal and voltage stress stability of high performance indium-zinc-oxide thin film transistors

    Song, Yang; Katsman, Alexander; Butcher, Amy L.; Paine, David C.; Zaslavsky, Alexander

    2017-10-01

    Thin film transistors (TFTs) based on transparent oxide semiconductors, such as indium zinc oxide (IZO), are of interest due to their improved characteristics compared to traditional a-Si TFTs. Previously, we reported on top-gated IZO TFTs with an in-situ formed HfO2 gate insulator and IZO active channel, showing high performance: on/off ratio of ∼107, threshold voltage VT near zero, extracted low-field mobility μ0 = 95 cm2/V·s, and near-perfect subthreshold slope at 62 mV/decade. Since device stability is essential for technological applications, in this paper we report on the temporal and voltage stress stability of IZO TFTs. Our devices exhibit a small negative VT shift as they age, consistent with an increasing carrier density resulting from an increasing oxygen vacancy concentration in the channel. Under gate bias stress, freshly annealed TFTs show a negative VT shift during negative VG gate bias stress, while aged (>1 week) TFTs show a positive VT shift during negative VG stress. This indicates two competing mechanisms, which we identify as the field-enhanced generation of oxygen vacancies and the field-assisted migration of oxygen vacancies, respectively. A simplified kinetic model of the vacancy concentration evolution in the IZO channel under electrical stress is provided.

  20. Carbohydrate-Assisted Combustion Synthesis To Realize High-Performance Oxide Transistors.

    Wang, Binghao; Zeng, Li; Huang, Wei; Melkonyan, Ferdinand S; Sheets, William C; Chi, Lifeng; Bedzyk, Michael J; Marks, Tobin J; Facchetti, Antonio

    2016-06-08

    Owing to high carrier mobilities, good environmental/thermal stability, excellent optical transparency, and compatibility with solution processing, thin-film transistors (TFTs) based on amorphous metal oxide semiconductors (AOSs) are promising alternatives to those based on amorphous silicon (a-Si:H) and low-temperature (IGZO) TFTs suffer from low carrier mobilities and/or inferior bias-stress stability versus their sputtered counterparts. Here we report that three types of environmentally benign carbohydrates (sorbitol, sucrose, and glucose) serve as especially efficient fuels for IGZO film combustion synthesis to yield high-performance TFTs. The results indicate that these carbohydrates assist the combustion process by lowering the ignition threshold temperature and, for optimal stoichiometries, enhancing the reaction enthalpy. IGZO TFT mobilities are increased to >8 cm(2) V(-1) s(-1) on SiO2/Si gate dielectrics with significantly improved bias-stress stability. The first correlations between precursor combustion enthalpy and a-MO densification/charge transport are established.

  1. Spray-combustion synthesis: efficient solution route to high-performance oxide transistors.

    Yu, Xinge; Smith, Jeremy; Zhou, Nanjia; Zeng, Li; Guo, Peijun; Xia, Yu; Alvarez, Ana; Aghion, Stefano; Lin, Hui; Yu, Junsheng; Chang, Robert P H; Bedzyk, Michael J; Ferragut, Rafael; Marks, Tobin J; Facchetti, Antonio

    2015-03-17

    Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achieved using methodologies such as sol gel, deep-UV irradiation, preformed nanostructures, and combustion synthesis. Nevertheless, because of incomplete lattice condensation and film densification, high-quality solution-processed MO films having technologically relevant thicknesses achievable in a single step have yet to be shown. Here, we report a low-temperature, thickness-controlled coating process to create high-performance, solution-processed MO electronics: spray-combustion synthesis (SCS). We also report for the first time, to our knowledge, indium-gallium-zinc-oxide (IGZO) transistors having densification, nanoporosity, electron mobility, trap densities, bias stability, and film transport approaching those of sputtered films and compatible with conventional fabrication (FAB) operations.

  2. High-performance integrated field-effect transistor-based sensors

    Adzhri, R., E-mail: adzhri@gmail.com [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Md Arshad, M.K., E-mail: mohd.khairuddin@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); School of Microelectronic Engineering (SoME), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Gopinath, Subash C.B., E-mail: subash@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); School of Bioprocess Engineering (SBE), Universiti Malaysia Perlis (UniMAP), Arau, Perlis (Malaysia); Ruslinda, A.R., E-mail: ruslinda@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Fathil, M.F.M., E-mail: faris.fathil@gmail.com [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Ayub, R.M., E-mail: ramzan@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Nor, M. Nuzaihan Mohd, E-mail: m.nuzaihan@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia); Voon, C.H., E-mail: chvoon@unimap.edu.my [Institute of Nano Electronic Engineering (INEE), Universiti Malaysia Perlis (UniMAP), Kangar, Perlis (Malaysia)

    2016-04-21

    Field-effect transistors (FETs) have succeeded in modern electronics in an era of computers and hand-held applications. Currently, considerable attention has been paid to direct electrical measurements, which work by monitoring changes in intrinsic electrical properties. Further, FET-based sensing systems drastically reduce cost, are compatible with CMOS technology, and ease down-stream applications. Current technologies for sensing applications rely on time-consuming strategies and processes and can only be performed under recommended conditions. To overcome these obstacles, an overview is presented here in which we specifically focus on high-performance FET-based sensor integration with nano-sized materials, which requires understanding the interaction of surface materials with the surrounding environment. Therefore, we present strategies, material depositions, device structures and other characteristics involved in FET-based devices. Special attention was given to silicon and polyaniline nanowires and graphene, which have attracted much interest due to their remarkable properties in sensing applications. - Highlights: • Performance of FET-based biosensors for the detection of biomolecules is presented. • Silicon nanowire, polyaniline and graphene are the highlighted nanoscaled materials as sensing transducers. • The importance of surface material interaction with the surrounding environment is discussed. • Different device structure architectures for ease in fabrication and high sensitivity of sensing are presented.

  3. High-performance integrated field-effect transistor-based sensors

    Adzhri, R.; Md Arshad, M.K.; Gopinath, Subash C.B.; Ruslinda, A.R.; Fathil, M.F.M.; Ayub, R.M.; Nor, M. Nuzaihan Mohd; Voon, C.H.

    2016-01-01

    Field-effect transistors (FETs) have succeeded in modern electronics in an era of computers and hand-held applications. Currently, considerable attention has been paid to direct electrical measurements, which work by monitoring changes in intrinsic electrical properties. Further, FET-based sensing systems drastically reduce cost, are compatible with CMOS technology, and ease down-stream applications. Current technologies for sensing applications rely on time-consuming strategies and processes and can only be performed under recommended conditions. To overcome these obstacles, an overview is presented here in which we specifically focus on high-performance FET-based sensor integration with nano-sized materials, which requires understanding the interaction of surface materials with the surrounding environment. Therefore, we present strategies, material depositions, device structures and other characteristics involved in FET-based devices. Special attention was given to silicon and polyaniline nanowires and graphene, which have attracted much interest due to their remarkable properties in sensing applications. - Highlights: • Performance of FET-based biosensors for the detection of biomolecules is presented. • Silicon nanowire, polyaniline and graphene are the highlighted nanoscaled materials as sensing transducers. • The importance of surface material interaction with the surrounding environment is discussed. • Different device structure architectures for ease in fabrication and high sensitivity of sensing are presented.

  4. High-performance carbon-nanotube-based complementary field-effect-transistors and integrated circuits with yttrium oxide

    Liang, Shibo; Zhang, Zhiyong, E-mail: zyzhang@pku.edu.cn; Si, Jia; Zhong, Donglai; Peng, Lian-Mao, E-mail: lmpeng@pku.edu.cn [Key Laboratory for the Physics and Chemistry of Nanodevices, Department of Electronics, Peking University, Beijing 100871 (China)

    2014-08-11

    High-performance p-type carbon nanotube (CNT) transistors utilizing yttrium oxide as gate dielectric are presented by optimizing oxidization and annealing processes. Complementary metal-oxide-semiconductor (CMOS) field-effect-transistors (FETs) are then fabricated on CNTs, and the p- and n-type devices exhibit symmetrical high performances, especially with low threshold voltage near to zero. The corresponding CMOS CNT inverter is demonstrated to operate at an ultra-low supply voltage down to 0.2 V, while displaying sufficient voltage gain, high noise margin, and low power consumption. Yttrium oxide is proven to be a competitive gate dielectric for constructing high-performance CNT CMOS FETs and integrated circuits.

  5. Cyclopentadithiophene-Benzothiadiazole Donor-Acceptor Polymers as Prototypical Semiconductors for High-Performance Field-Effect Transistors.

    Li, Mengmeng; An, Cunbin; Pisula, Wojciech; Müllen, Klaus

    2018-05-15

    Donor-acceptor (D-A) conjugated polymers are of great interest as organic semiconductors, because they offer a rational tailoring of the electronic properties by modification of the donor and acceptor units. Nowadays, D-A polymers exhibit field-effect mobilities on the order of 10 -2 -10 0 cm 2 V -1 s -1 , while several examples showed a mobility over 10 cm 2 V -1 s -1 . The development of cyclopentadithiophene-benzothiadiazole (CDT-BTZ) copolymers one decade ago represents an important step toward high-performance organic semiconductors for field-effect transistors. The significant rise in field-effect mobility of CDT-BTZ in comparison to the existing D-A polymers at that time opened the door to a new research field with a large number of novel D-A systems. From this point, the device performance of CDT-BTZ was gradually improved by a systematic optimization of the synthesis and polymer structure as well as by an efficient solution processing into long-range ordered thin films. The key aspect was a comprehensive understanding of the relation between polymer structure and solid-state organization. Due to their fundamental role for the field of D-A polymers in general, this Account will for the first time explicitly focus on prototypical CDT-BTZ polymers, while other reviews provide an excellent general overview on D-A polymers. The first part of this Account discusses strategies for improving the charge carrier transport, focusing on chemical aspects. Improved synthesis as an essential stage toward high purity, and high molecular weight is a prerequisite for molecular order. The modification of substituents is a further crucial feature to tune the CDT-BTZ packing and self-assembly. Linear alkyl side chains facilitate intermolecular π-stacking interactions, while branched ones increase solubility and alter the polymer packing. Additional control over the supramolecular organization of CDT-BTZ polymers is introduced by alkenyl substituents via their cis

  6. High-Performance Quantum Dot Thin-Film Transistors with Environmentally Benign Surface Functionalization and Robust Defect Passivation.

    Jung, Su Min; Kang, Han Lim; Won, Jong Kook; Kim, JaeHyun; Hwang, ChaHwan; Ahn, KyungHan; Chung, In; Ju, Byeong-Kwon; Kim, Myung-Gil; Park, Sung Kyu

    2018-01-31

    The recent development of high-performance colloidal quantum dot (QD) thin-film transistors (TFTs) has been achieved with removal of surface ligand, defect passivation, and facile electronic doping. Here, we report on high-performance solution-processed CdSe QD-TFTs with an optimized surface functionalization and robust defect passivation via hydrazine-free metal chalcogenide (MCC) ligands. The underlying mechanism of the ligand effects on CdSe QDs has been studied with hydrazine-free ex situ reaction derived MCC ligands, such as Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- , to allow benign solution-process available. Furthermore, the defect passivation and remote n-type doping effects have been investigated by incorporating indium nanoparticles over the QD layer. Strong electronic coupling and solid defect passivation of QDs could be achieved by introducing electronically active MCC capping and thermal diffusion of the indium nanoparticles, respectively. It is also noteworthy that the diffused indium nanoparticles facilitate charge injection not only inter-QDs but also between source/drain electrodes and the QD semiconductors, significantly reducing contact resistance. With benign organic solvents, the Sn 2 S 6 4- , Sn 2 Se 6 4- , and In 2 Se 4 2- ligand based QD-TFTs exhibited field-effect mobilities exceeding 4.8, 12.0, and 44.2 cm 2 /(V s), respectively. The results reported here imply that the incorporation of MCC ligands and appropriate dopants provide a general route to high-performance, extremely stable solution-processed QD-based electronic devices with marginal toxicity, offering compatibility with standard complementary metal oxide semiconductor processing and large-scale on-chip device applications.

  7. A III-V nanowire channel on silicon for high-performance vertical transistors.

    Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

    2012-08-09

    Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

  8. Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

    Hanna, Amir

    2016-01-01

    This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving

  9. Area and energy efficient high-performance ZnO wavy channel thin-film transistor

    Hanna, Amir; Ghoneim, Mohamed T.; Bahabry, Rabab R.; Hussain, Aftab M.; Fahad, Hossain M.; Hussain, Muhammad Mustafa

    2014-01-01

    of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased

  10. Benchmarking organic mixed conductors for transistors

    Inal, Sahika; Malliaras, George G.; Rivnay, Jonathan

    2017-01-01

    Organic mixed conductors have garnered significant attention in applications from bioelectronics to energy storage/generation. Their implementation in organic transistors has led to enhanced biosensing, neuromorphic function, and specialized circuits. While a narrow class of conducting polymers continues to excel in these new applications, materials design efforts have accelerated as researchers target new functionality, processability, and improved performance/stability. Materials for organic electrochemical transistors (OECTs) require both efficient electronic transport and facile ion injection in order to sustain high capacity. In this work, we show that the product of the electronic mobility and volumetric charge storage capacity (µC*) is the materials/system figure of merit; we use this framework to benchmark and compare the steady-state OECT performance of ten previously reported materials. This product can be independently verified and decoupled to guide materials design and processing. OECTs can therefore be used as a tool for understanding and designing new organic mixed conductors.

  11. Benchmarking organic mixed conductors for transistors

    Inal, Sahika

    2017-11-20

    Organic mixed conductors have garnered significant attention in applications from bioelectronics to energy storage/generation. Their implementation in organic transistors has led to enhanced biosensing, neuromorphic function, and specialized circuits. While a narrow class of conducting polymers continues to excel in these new applications, materials design efforts have accelerated as researchers target new functionality, processability, and improved performance/stability. Materials for organic electrochemical transistors (OECTs) require both efficient electronic transport and facile ion injection in order to sustain high capacity. In this work, we show that the product of the electronic mobility and volumetric charge storage capacity (µC*) is the materials/system figure of merit; we use this framework to benchmark and compare the steady-state OECT performance of ten previously reported materials. This product can be independently verified and decoupled to guide materials design and processing. OECTs can therefore be used as a tool for understanding and designing new organic mixed conductors.

  12. Self-standing chitosan films as dielectrics in organic thin-film transistors

    J. Morgado

    2013-12-01

    Full Text Available Organic thin film transistors, using self-standing 50 µm thick chitosan films as dielectric, are fabricated using sublimed pentacene or two conjugated polymers deposited by spin coating as semiconductors. Field-effect mobilities are found to be similar to values obtained with other dielectrics and, in the case of pentacene, a value (0.13 cm2/(V•s comparable to high performing transistors was determined. In spite of the low On/Off ratios (a maximum value of 600 was obtained for the pentacene-based transistors, these are promising results for the area of sustainable organic electronics in general and for biocompatible electronics in particular.

  13. High mobility polymer gated organic field effect transistor using zinc ...

    Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

  14. Sub-50 nm gate length SOI transistor development for high performance microprocessors

    Horstmann, M.; Greenlaw, D.; Feudel, Th.; Wei, A.; Frohberg, K.; Burbach, G.; Gerhardt, M.; Lenski, M.; Stephan, R.; Wieczorek, K.; Schaller, M.; Hohage, J.; Ruelke, H.; Klais, J.; Huebler, P.; Luning, S.; Bentum, R. van; Grasshoff, G.; Schwan, C.; Cheek, J.; Buller, J.; Krishnan, S.; Raab, M.; Kepler, N.

    2004-01-01

    Partial depleted (PD) SOI technologies have reached maturity for production of high speed, low power microprocessors. The paper will highlight several challenges found during the course of development for bringing 40 nm gate length (L GATE ) PD SOI transistors into volume manufacturing for high-speed microprocessors. The key innovations developed for this transistor in order to overcome classical gate oxide and L GATE scaling is an unique differential triple spacer structure, stressed overlayer films inducing strain in the Silicon channel and optimized junctions. This transistor structure yields an outstanding ring oscillator speed with an unloaded inverter delay of 5.5 ps. The found improvements are highly manufacturable and scaleable for future device technologies like FD SOI

  15. High-performance solution-processed polymer ferroelectric field-effect transistors

    Naber, RCG; Tanase, C; Blom, PWM; Gelinck, GH; Marsman, AW; Touwslager, FJ; Setayesh, S; De Leeuw, DM; Naber, Ronald C.G.; Gelinck, Gerwin H.; Marsman, Albert W.; Touwslager, Fred J.

    We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor

  16. Advancement in organic nanofiber based transistors

    Jensen, Per Baunegaard With; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    and characterization of OLETs using the organic semiconductors para-hexaphenylene (p6P), 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP) and 5,5'-bis(naphth-2-yl)-2,2'-bithiophene (NaT2). These molecules can self-assemble forming molecular crystalline nanofibers. Organic nanofibers can form the basis for light......The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication...

  17. High Performance Polymer Field-Effect Transistors Based on Thermally Crosslinked Poly(3-hexylthiophene)

    Jiang Chun-Xia; Yang Xiao-Yan; Zhao Kai; Wu Xiao-Ming; Yang Li-Ying; Cheng Xiao-Man; Yin Shou-Gen; Wei Jun

    2011-01-01

    The performance of polymer field-effect transistors is improved by thermal crosslinking ofpoly(3-hexylthiophene), using ditert butyl peroxide as the crosslinker. The device performance depends on the crosslinker concentration significantly. We obtain an optimal on/off ratio of 10 5 and the saturate field-effect mobility of 0.34cm 2 V −1 s −1 , by using a suitable ratios of ditert butyl peroxide, 0.5 wt% ofpoly(3-hexylthiophene). The microstructure images show that the crosslinked poly(3-hexylthiophene) active layers simultaneously possess appropriate crystallinity and smooth morphology. Moreover, crosslinking of poly(3-hexylthiophene) prevents the transistors from large threshold voltage shifts under ambient bias-stressing, showing an advantage in encouraging device environmental and operating stability. (cross-disciplinary physics and related areas of science and technology)

  18. Deformable Organic Nanowire Field-Effect Transistors.

    Lee, Yeongjun; Oh, Jin Young; Kim, Taeho Roy; Gu, Xiaodan; Kim, Yeongin; Wang, Ging-Ji Nathan; Wu, Hung-Chin; Pfattner, Raphael; To, John W F; Katsumata, Toru; Son, Donghee; Kang, Jiheong; Matthews, James R; Niu, Weijun; He, Mingqian; Sinclair, Robert; Cui, Yi; Tok, Jeffery B-H; Lee, Tae-Woo; Bao, Zhenan

    2018-02-01

    Deformable electronic devices that are impervious to mechanical influence when mounted on surfaces of dynamically changing soft matters have great potential for next-generation implantable bioelectronic devices. Here, deformable field-effect transistors (FETs) composed of single organic nanowires (NWs) as the semiconductor are presented. The NWs are composed of fused thiophene diketopyrrolopyrrole based polymer semiconductor and high-molecular-weight polyethylene oxide as both the molecular binder and deformability enhancer. The obtained transistors show high field-effect mobility >8 cm 2 V -1 s -1 with poly(vinylidenefluoride-co-trifluoroethylene) polymer dielectric and can easily be deformed by applied strains (both 100% tensile and compressive strains). The electrical reliability and mechanical durability of the NWs can be significantly enhanced by forming serpentine-like structures of the NWs. Remarkably, the fully deformable NW FETs withstand 3D volume changes (>1700% and reverting back to original state) of a rubber balloon with constant current output, on the surface of which it is attached. The deformable transistors can robustly operate without noticeable degradation on a mechanically dynamic soft matter surface, e.g., a pulsating balloon (pulse rate: 40 min -1 (0.67 Hz) and 40% volume expansion) that mimics a beating heart, which underscores its potential for future biomedical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Organic Thin-Film Transistor (OTFT-Based Sensors

    Daniel Elkington

    2014-04-01

    Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  20. Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends.

    Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

    2016-08-02

    Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed.

  1. Inkjet-Printed Organic Transistors Based on Organic Semiconductor/Insulating Polymer Blends

    Kwon, Yoon-Jung; Park, Yeong Don; Lee, Wi Hyoung

    2016-01-01

    Recent advances in inkjet-printed organic field-effect transistors (OFETs) based on organic semiconductor/insulating polymer blends are reviewed in this article. Organic semiconductor/insulating polymer blends are attractive ink candidates for enhancing the jetting properties, inducing uniform film morphologies, and/or controlling crystallization behaviors of organic semiconductors. Representative studies using soluble acene/insulating polymer blends as an inkjet-printed active layer in OFETs are introduced with special attention paid to the phase separation characteristics of such blended films. In addition, inkjet-printed semiconducting/insulating polymer blends for fabricating high performance printed OFETs are reviewed. PMID:28773772

  2. High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage.

    Van, Ngoc Huynh; Lee, Jae-Hyun; Sohn, Jung Inn; Cha, Seung Nam; Whang, Dongmok; Kim, Jong Min; Kang, Dae Joon

    2014-05-21

    We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics.

  3. Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

    2014-01-01

    Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

  4. Area and energy efficient high-performance ZnO wavy channel thin-film transistor

    Hanna, Amir

    2014-09-01

    Increased output current while maintaining low power consumption in thin-film transistors (TFTs) is essential for future generation large-area high-resolution displays. Here, we show wavy channel (WC) architecture in TFT that allows the expansion of the transistor width in the direction perpendicular to the substrate through integrating continuous fin features on the underlying substrate. This architecture enables expanding the TFT width without consuming any additional chip area, thus enabling increased performance while maintaining the real estate integrity. The experimental WCTFTs show a linear increase in output current as a function of number of fins per device resulting in (3.5×) increase in output current when compared with planar counterparts that consume the same chip area. The new architecture also allows tuning the threshold voltage as a function of the number of fin features included in the device, as threshold voltage linearly decreased from 6.8 V for planar device to 2.6 V for WC devices with 32 fins. This makes the new architecture more power efficient as lower operation voltages could be used for WC devices compared with planar counterparts. It was also found that field effect mobility linearly increases with the number of fins included in the device, showing almost \\\\(1.8×) enhancements in the field effect mobility than that of the planar counterparts. This can be attributed to higher electric field in the channel due to the fin architecture and threshold voltage shift. © 2014 IEEE.

  5. Wavy channel thin film transistor architecture for area efficient, high performance and low power displays

    Hanna, Amir

    2013-12-23

    We demonstrate a new thin film transistor (TFT) architecture that allows expansion of the device width using continuous fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.5× increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, ~100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers an interesting opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Wavy channel Thin Film Transistor for area efficient, high performance and low power applications

    Hanna, Amir

    2014-06-01

    We report a new Thin Film Transistor (TFT) architecture that allows expansion of the device width using wavy (continuous without separation) fin features - termed as wavy channel (WC) architecture. This architecture allows expansion of transistor width in a direction perpendicular to the substrate, thus not consuming extra chip area, achieving area efficiency. The devices have shown for a 13% increase in the device width resulting in a maximum 2.4x increase in \\'ON\\' current value of the WCTFT, when compared to planar devices consuming the same chip area, while using atomic layer deposition based zinc oxide (ZnO) as the channel material. The WCTFT devices also maintain similar \\'OFF\\' current value, similar to 100 pA, when compared to planar devices, thus not compromising on power consumption for performance which usually happens with larger width devices. This work offers a pragmatic opportunity to use WCTFTs as backplane circuitry for large-area high-resolution display applications without any limitation any TFT materials.

  7. Bioinspired phospholipid polymer biomaterials for making high performance artificial organs

    K Ishihara

    2000-01-01

    Full Text Available Novel polymer biomaterials, which can be used in contact with blood, are prepared with strong inspiration from the surface structure of biomembrane. That is, the polymers with a phospholipid polar group in the side chain, 2-methacrylooyloxyethyl phosphorylcholine (MPC polymers were synthesized. The MPC polymers can inhibit surface-induced clot formation effectively, when they are in contact with blood even in the absence of an anticoagulant. This phenomenon was due to the reduction of plasma protein and suppression of denaturation of adsorbed proteins, that is the MPC polymers interact with blood components very mildly. As the molecular structure of the MPC polymer was easily designed by changing the monomer units and their composition, it could be applied to surface modification of artificial organs and biomedical devices for improving blood and tissue compatibility. Thus, the MPC polymers are useful polymer biomaterials for manufacturing high performance artificial organs and biomedical devices to provide safe medical treatments.

  8. CHAPTER 3. High-performance Organic Photovoltaic Donor Polymers

    Wadsworth, Andrew

    2017-11-08

    The field of organic photovoltaics has advanced a great deal over the last decade, with device efficiencies now exceeding 11%. A large part of this success can be attributed to the development of donor polymer materials, from their humble beginnings as homopolymers to the highly tuned push-pull copolymer and terpolymer materials that are now being reported on a regular basis. Through the careful use of chemical modification, it has been possible to design and synthesize a wide variety of donor polymers, allowing optimization of both the optoelectronic and structural properties of the materials. In doing so, more favourable active layer blends have been achieved and therefore significant improvements in device performance have been observed. Herein we discuss how the chemical design of donor polymers for organic photovoltaics has led to the emergence of high-performance materials.

  9. CHAPTER 3. High-performance Organic Photovoltaic Donor Polymers

    Wadsworth, Andrew; Baran, Derya; Gorman, Jeffrey; McCulloch, Iain

    2017-01-01

    The field of organic photovoltaics has advanced a great deal over the last decade, with device efficiencies now exceeding 11%. A large part of this success can be attributed to the development of donor polymer materials, from their humble beginnings as homopolymers to the highly tuned push-pull copolymer and terpolymer materials that are now being reported on a regular basis. Through the careful use of chemical modification, it has been possible to design and synthesize a wide variety of donor polymers, allowing optimization of both the optoelectronic and structural properties of the materials. In doing so, more favourable active layer blends have been achieved and therefore significant improvements in device performance have been observed. Herein we discuss how the chemical design of donor polymers for organic photovoltaics has led to the emergence of high-performance materials.

  10. Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

    Hanna, Amir

    2016-11-01

    This dissertation presents a unique concept for a device architecture named the nanotube (NT) architecture, which is capable of higher drive current compared to the Gate-All-Around Nanowire architecture when applied to heterostructure Tunnel Field Effect Transistors. Through the use of inner/outer core-shell gates, heterostructure NT TFET leverages physically larger tunneling area thus achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. We discuss the physics of p-type (Silicon/Indium Arsenide) and n-type (Silicon/Germanium hetero-structure) based TFETs. Numerical TCAD simulations have shown that NT TFETs have 5x and 1.6 x higher normalized ION when compared to GAA NW TFET for p and n-type TFETs, respectively. This is due to the availability of larger tunneling junction cross sectional area, and lower Shockley-Reed-Hall recombination, while achieving sub 60 mV/dec performance for more than 5 orders of magnitude of drain current, thus enabling scaling down of Vdd to 0.5 V. This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving rise to up to 50% larger device width, without occupying extra chip area. The novel architecture shows 2x higher output drive current per unit chip area when compared to conventional planar architecture. The current increase is attributed to both the extra device width and 50% enhancement in field effect mobility due to electrostatic gating effects. Digital circuits are fabricated to demonstrate the potential of integrating WC TFT based circuits. WC inverters have shown 2× the peak-to-peak output voltage for the same input, and ~2× the operation frequency of the planar inverters for the same peak-to-peak output voltage. WC NAND circuits have shown 2× higher peak-to-peak output voltage, and 3× lower high-to-low propagation

  11. Azaisoindigo conjugated polymers for high performance n-type and ambipolar thin film transistor applications

    Yue, Wan

    2016-09-28

    Two new alternating copolymers, PAIIDBT and PAIIDSe have been prepared by incorporating a highly electron deficient azaisoindigo core. The molecular structure and packing of the monomer is determined from the single crystal X-ray diffraction. Both polymers exhibit high EAs and highly planar polymer backbones. When polymers are used as the semiconducting channel for solution-processed thin film transistor application, good properties are observed. A–A type PAIIDBT exhibits unipolar electron mobility as high as 1.0 cm2 V−1 s−1, D–A type PAIIDSe exhibits ambipolar charge transport behavior with predominately electron mobility up to 0.5 cm2 V−1 s−1 and hole mobility to 0.2 cm2 V−1 s−1. The robustness of the extracted mobility values are also commented on in detail. Molecular orientation, thin film morphology and energetic disorder of both polymers are systematically investigated.

  12. High performance and transparent multilayer MoS2 transistors: Tuning Schottky barrier characteristics

    Young Ki Hong

    2016-05-01

    Full Text Available Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS2 thin-film transistor (TFT, which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS2 TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS2 and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  13. High performance and transparent multilayer MoS{sub 2} transistors: Tuning Schottky barrier characteristics

    Hong, Young Ki; Kwon, Junyeon; Hong, Seongin; Song, Won Geun; Liu, Na; Omkaram, Inturu; Kim, Sunkook, E-mail: kimskcnt@gmail.com, E-mail: ohms@keti.re.kr [Multi-Functional Bio/Nano Lab., Kyung Hee University, Gyeonggi 446-701 (Korea, Republic of); Yoo, Geonwook; Yoo, Byungwook; Oh, Min Suk, E-mail: kimskcnt@gmail.com, E-mail: ohms@keti.re.kr [Display Convergence Research Center, Korea Electronics Technology Institute, Gyeonggi 463-816 (Korea, Republic of); Ju, Sanghyun [Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760 (Korea, Republic of)

    2016-05-15

    Various strategies and mechanisms have been suggested for investigating a Schottky contact behavior in molybdenum disulfide (MoS{sub 2}) thin-film transistor (TFT), which are still in much debate and controversy. As one of promising breakthrough for transparent electronics with a high device performance, we have realized MoS{sub 2} TFTs with source/drain electrodes consisting of transparent bi-layers of a conducting oxide over a thin film of low work function metal. Intercalation of a low work function metal layer, such as aluminum, between MoS{sub 2} and transparent source/drain electrodes makes it possible to optimize the Schottky contact characteristics, resulting in about 24-fold and 3 orders of magnitude enhancement of the field-effect mobility and on-off current ratio, respectively, as well as transmittance of 87.4 % in the visible wavelength range.

  14. Trap Healing for High-Performance Low-Voltage Polymer Transistors and Solution-Based Analog Amplifiers on Foil.

    Pecunia, Vincenzo; Nikolka, Mark; Sou, Antony; Nasrallah, Iyad; Amin, Atefeh Y; McCulloch, Iain; Sirringhaus, Henning

    2017-06-01

    Solution-processed semiconductors such as conjugated polymers have great potential in large-area electronics. While extremely appealing due to their low-temperature and high-throughput deposition methods, their integration in high-performance circuits has been difficult. An important remaining challenge is the achievement of low-voltage circuit operation. The present study focuses on state-of-the-art polymer thin-film transistors based on poly(indacenodithiophene-benzothiadiazole) and shows that the general paradigm for low-voltage operation via an enhanced gate-to-channel capacitive coupling is unable to deliver high-performance device behavior. The order-of-magnitude longitudinal-field reduction demanded by low-voltage operation plays a fundamental role, enabling bulk trapping and leading to compromised contact properties. A trap-reduction technique based on small molecule additives, however, is capable of overcoming this effect, allowing low-voltage high-mobility operation. This approach is readily applicable to low-voltage circuit integration, as this work exemplifies by demonstrating high-performance analog differential amplifiers operating at a battery-compatible power supply voltage of 5 V with power dissipation of 11 µW, and attaining a voltage gain above 60 dB at a power supply voltage below 8 V. These findings constitute an important milestone in realizing low-voltage polymer transistors for solution-based analog electronics that meets performance and power-dissipation requirements for a range of battery-powered smart-sensing applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. High performance organic ultraviolet photodetectors based on m-MTDATA

    Zhao, Zhongli; Bai, Xiaofeng; Shang, Yubin; Yang, Jikai; Li, Baozeng; Song, De

    2018-02-01

    We demonstrate highly efficient organic ultraviolet photodetectors using 4,4',4'' -tris[3-methyl-pheny(phenyl) amino] triphenylamine (m-MTDATA) and aluminum Tris(8-Hydroxyquinolinate) Synonym Alq3). The optimized photodetector delivers a photocurrent of 1.40 mA/cm2 at10 V, corresponding to a response of 127 mA/W under an illumination of 375 nm UV light irradiation with an intensity of 10.5 mW/cm2 and a detectivity of 2.15×1011 cm Hz1/2 /W. The high response is attributed to the larger band offset at m-MTDATA/ Alq3 heterojunction, the suppression of radiative decay of m-MTDATA and efficient electron transfer from m-MTDATA to Alq3. The working mechanism of harvesting high performance is also discussed in detail.

  16. Ambipolar charge transport in organic field-effect transistors

    Smits, E.C.P.; Anthopoulos, T.D.; Setayesh, S.; Veenendaal, van E.; Coehoorn, R.; Blom, P.W.M.; Boer, de B.; Leeuw, de D.M.

    2006-01-01

    A model describing charge transport in disordered ambipolar organic field-effect transistors is presented. The basis of this model is the variable-range hopping in an exponential density of states developed for disordered unipolar organic transistors. We show that the model can be used to calculate

  17. High performance tunnel field-effect transistor by gate and source engineering

    Huang, Ru; Huang, Qianqian; Chen, Shaowen; Wu, Chunlei; Wang, Jiaxin; An, Xia; Wang, Yangyuan

    2014-01-01

    As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I ON /I OFF ratio (∼10 7 ) at V DS  = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high I ON /I OFF ratio of ∼10 8 and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec −1 was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching. (paper)

  18. High performance tunnel field-effect transistor by gate and source engineering.

    Huang, Ru; Huang, Qianqian; Chen, Shaowen; Wu, Chunlei; Wang, Jiaxin; An, Xia; Wang, Yangyuan

    2014-12-19

    As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I(ON)/I(OFF) ratio (∼ 10(7)) at V(DS) = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high ION/IOFF ratio of ∼ 10(8) and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec(-1) was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching.

  19. 3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics

    Ko, Sangwon

    2011-10-26

    We demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm2 V-1 s-1) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed. © 2011 American Chemical Society.

  20. High performance dendrimer functionalized single-walled carbon nanotubes field effect transistor biosensor for protein detection

    Rajesh, Sharma, Vikash; Puri, Nitin K.; Mulchandani, Ashok; Kotnala, Ravinder K.

    2016-12-01

    We report a single-walled carbon nanotube (SWNT) field-effect transistor (FET) functionalized with Polyamidoamine (PAMAM) dendrimer with 128 carboxyl groups as anchors for site specific biomolecular immobilization of protein antibody for C-reactive protein (CRP) detection. The FET device was characterized by scanning electron microscopy and current-gate voltage (I-Vg) characteristic studies. A concentration-dependent decrease in the source-drain current was observed in the regime of clinical significance, with a detection limit of ˜85 pM and a high sensitivity of 20% change in current (ΔI/I) per decade CRP concentration, showing SWNT being locally gated by the binding of CRP to antibody (anti-CRP) on the FET device. The low value of the dissociation constant (Kd = 0.31 ± 0.13 μg ml-1) indicated a high affinity of the device towards CRP analyte arising due to high anti-CRP loading with a better probe orientation on the 3-dimensional PAMAM structure.

  1. 3,4-Disubstituted Polyalkylthiophenes for High-Performance Thin-Film Transistors and Photovoltaics

    Ko, Sangwon; Verploegen, Eric; Hong, Sanghyun; Mondal, Rajib; Hoke, Eric T.; Toney, Michael F.; McGehee, Michael D.; Bao, Zhenan

    2011-01-01

    We demonstrate that poly(3,4-dialkylterthiophenes) (P34ATs) have comparable transistor mobilities (0.17 cm2 V-1 s-1) and greater environmental stability (less degradation of on/off ratio) than regioregular poly(3-alkylthiophenes) (P3ATs). Unlike poly(3-hexylthiophene) (P3HT), P34ATs do not show a strong and distinct π-π stacking in X-ray diffraction. This suggests that a strong π-π stacking is not always necessary for high charge-carrier mobility and that other potential polymer packing motifs in addition to the edge-on structure (π-π stacking direction parallel to the substrate) can lead to a high carrier mobility. The high charge-carrier mobilities of the hexyl and octyl-substituted P34AT produce power conversion efficiencies of 4.2% in polymer:fullerene bulk heterojunction photovoltaic devices. An enhanced open-circuit voltage (0.716-0.771 eV) in P34AT solar cells relative to P3HT due to increased ionization potentials was observed. © 2011 American Chemical Society.

  2. Controllable electrical properties of metal-doped In2O3 nanowires for high-performance enhancement-mode transistors.

    Zou, Xuming; Liu, Xingqiang; Wang, Chunlan; Jiang, Ying; Wang, Yong; Xiao, Xiangheng; Ho, Johnny C; Li, Jinchai; Jiang, Changzhong; Xiong, Qihua; Liao, Lei

    2013-01-22

    In recent years, In(2)O(3) nanowires (NWs) have been widely explored in many technological areas due to their excellent electrical and optical properties; however, most of these devices are based on In(2)O(3) NW field-effect transistors (FETs) operating in the depletion mode, which induces relatively higher power consumption and fancier circuit integration design. Here, n-type enhancement-mode In(2)O(3) NW FETs are successfully fabricated by doping different metal elements (Mg, Al, and Ga) in the NW channels. Importantly, the resulting threshold voltage can be effectively modulated through varying the metal (Mg, Ga, and Al) content in the NWs. A series of scaling effects in the mobility, transconductance, threshold voltage, and source-drain current with respect to the device channel length are also observed. Specifically, a small gate delay time (0.01 ns) and high on-current density (0.9 mA/μm) are obtained at 300 nm channel length. Furthermore, Mg-doped In(2)O(3) NWs are then employed to fabricate NW parallel array FETs with a high saturation current (0.5 mA), on/off ratio (>10(9)), and field-effect mobility (110 cm(2)/V·s), while the subthreshold slope and threshold voltage do not show any significant changes. All of these results indicate the great potency for metal-doped In(2)O(3) NWs used in the low-power, high-performance thin-film transistors.

  3. Stable organic thin-film transistors

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  4. Alkylated selenophene-based ladder-type monomers via a facile route for high performance thin-film transistor applications

    Fei, Zhuping

    2017-05-26

    We report the synthesis of two new selenophene containing ladder-type monomers, cyclopentadiselenophene (CDS) and indacenodiselenophene (IDSe), via a twofold and fourfold Pd catalyzed coupling with a 1,1-diborylmethane derivative. Co-polymers with benzothiadiazole (BT) were prepared in high yield by Suzuki polymerization to afford co-polymers which exhibited excellent solubility in a range of non-chlorinated solvents. The CDS co-polymer exhibited a band gap of just 1.18 eV, which is amongst the lowest reported for donor-acceptor polymers. Thin-film transistors were fabricated using environmentally benign, non-chlorinated solvents with the CDS and IDSe co-polymers exhibiting hole mobility up to 0.15 and 6.4 cm2 /Vs, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.

  5. Alkylated selenophene-based ladder-type monomers via a facile route for high performance thin-film transistor applications

    Fei, Zhuping; Han, Yang; Gann, Eliot; Hodsden, Thomas; Chesman, Anthony; McNeill, Christopher R.; Anthopoulos, Thomas D.; Heeney, Martin

    2017-01-01

    We report the synthesis of two new selenophene containing ladder-type monomers, cyclopentadiselenophene (CDS) and indacenodiselenophene (IDSe), via a twofold and fourfold Pd catalyzed coupling with a 1,1-diborylmethane derivative. Co-polymers with benzothiadiazole (BT) were prepared in high yield by Suzuki polymerization to afford co-polymers which exhibited excellent solubility in a range of non-chlorinated solvents. The CDS co-polymer exhibited a band gap of just 1.18 eV, which is amongst the lowest reported for donor-acceptor polymers. Thin-film transistors were fabricated using environmentally benign, non-chlorinated solvents with the CDS and IDSe co-polymers exhibiting hole mobility up to 0.15 and 6.4 cm2 /Vs, respectively. This high performance was achieved without the undesirable peak in mobility often observed at low gate voltages due to parasitic contact resistance.

  6. High performance solution-deposited amorphous indium gallium zinc oxide thin film transistors by oxygen plasma treatment

    Nayak, Pradipta K.

    2012-05-16

    Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors(TFTs) with high performance were fabricated using O2-plasma treatment of the films prior to high temperature annealing. The O2-plasma treatment resulted in a decrease in oxygen vacancy and residual hydrocarbon concentration in the a-IGZO films, as well as an improvement in the dielectric/channel interfacial roughness. As a result, the TFTs with O2-plasma treated a-IGZO channel layers showed three times higher linear field-effect mobility compared to the untreated a-IGZO over a range of processing temperatures. The O2-plasma treatment effectively reduces the required processing temperature of solution-deposited a-IGZO films to achieve the required performance.

  7. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  8. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-01-01

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  9. Direct Photolithography on Molecular Crystals for High Performance Organic Optoelectronic Devices.

    Yao, Yifan; Zhang, Lei; Leydecker, Tim; Samorì, Paolo

    2018-05-23

    Organic crystals are generated via the bottom-up self-assembly of molecular building blocks which are held together through weak noncovalent interactions. Although they revealed extraordinary charge transport characteristics, their labile nature represents a major drawback toward their integration in optoelectronic devices when the use of sophisticated patterning techniques is required. Here we have devised a radically new method to enable the use of photolithography directly on molecular crystals, with a spatial resolution below 300 nm, thereby allowing the precise wiring up of multiple crystals on demand. Two archetypal organic crystals, i.e., p-type 2,7-diphenyl[1]benzothieno[3,2- b][1]benzothiophene (Dph-BTBT) nanoflakes and n-type N, N'-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8) nanowires, have been exploited as active materials to realize high-performance top-contact organic field-effect transistors (OFETs), inverter and p-n heterojunction photovoltaic devices supported on plastic substrate. The compatibility of our direct photolithography technique with organic molecular crystals is key for exploiting the full potential of organic electronics for sophisticated large-area devices and logic circuitries, thus paving the way toward novel applications in plastic (opto)electronics.

  10. Au nanoparticles attached carbon nanotubes as a high performance active element in field effect transistor

    Lee, Myeongsoon; Kim, Don

    2016-01-01

    The Au nanoparticles attached carbon nanotubes (Au-CNTs), diameter ranged from 40 to 250 nm, were prepared and discussed their chemical and electrical properties. The shape and crystallinity of the carbon nanotubes (CNTs) phase depended main2ly on the diameter of CNTs (r_A_u_-_C_N_T). Highly crystalline, straight CNTs were observed when the r_A_u_-_C_N_T exceeded 80 nm, and less crystalline noodle-shaped CNTs were observed when the r_A_u_-_C_N_T was smaller than 80 nm. The crystallinity of the CNT phase was confirmed by analyzing the G and D bands in their Raman spectra and the electrical conductivities of the Au-CNTs. The electrical conductivity of the highly crystalline carbon phase of Au-CNTs (r_A_u_-_C_N_T = 250 nm) was ∼10"4 S/cm. The back-gated field effect transistors (FETs) based on the Au-CNTs, which were assembled on a SiO_2/Si wafer using the dielectrophoresis technique, showed that the Au-CNTs would be a good functional electronic material for future electronic and sensing applications. The transconductance and hole mobility of the FETs, which were assembled with the highly crystalline Au-CNTs (r_A_u_-_C_N_T = 250 nm), reached to 3.6 × 10"−"4 A/V and 3.1 × 10"4 cm"2/V s, respectively. These values are in the middle of those of reported for single walled carbon nanotubes and graphene. However, we could not find any field effect in a CNTFET, which assembled without Au nanoparticles, through the same process. - Highlights: • The shape and crystallinity of the CNTs depended mainly on the diameter of CNTs. • The electrical conductivity of the highly crystalline Au-CNTs was ∼10"4 S/cm. • The Au-CNT FET shows typical p-channel gate effect with the on/off ratio of ∼10"4. • The Au-CNT FET shows very high transconductance (g_m) and carrier mobility (μ_h).

  11. Au nanoparticles attached carbon nanotubes as a high performance active element in field effect transistor

    Lee, Myeongsoon; Kim, Don, E-mail: donkim@pknu.ac.kr

    2016-08-15

    The Au nanoparticles attached carbon nanotubes (Au-CNTs), diameter ranged from 40 to 250 nm, were prepared and discussed their chemical and electrical properties. The shape and crystallinity of the carbon nanotubes (CNTs) phase depended main2ly on the diameter of CNTs (r{sub Au-CNT}). Highly crystalline, straight CNTs were observed when the r{sub Au-CNT} exceeded 80 nm, and less crystalline noodle-shaped CNTs were observed when the r{sub Au-CNT} was smaller than 80 nm. The crystallinity of the CNT phase was confirmed by analyzing the G and D bands in their Raman spectra and the electrical conductivities of the Au-CNTs. The electrical conductivity of the highly crystalline carbon phase of Au-CNTs (r{sub Au-CNT} = 250 nm) was ∼10{sup 4} S/cm. The back-gated field effect transistors (FETs) based on the Au-CNTs, which were assembled on a SiO{sub 2}/Si wafer using the dielectrophoresis technique, showed that the Au-CNTs would be a good functional electronic material for future electronic and sensing applications. The transconductance and hole mobility of the FETs, which were assembled with the highly crystalline Au-CNTs (r{sub Au-CNT} = 250 nm), reached to 3.6 × 10{sup −4} A/V and 3.1 × 10{sup 4} cm{sup 2}/V s, respectively. These values are in the middle of those of reported for single walled carbon nanotubes and graphene. However, we could not find any field effect in a CNTFET, which assembled without Au nanoparticles, through the same process. - Highlights: • The shape and crystallinity of the CNTs depended mainly on the diameter of CNTs. • The electrical conductivity of the highly crystalline Au-CNTs was ∼10{sup 4} S/cm. • The Au-CNT FET shows typical p-channel gate effect with the on/off ratio of ∼10{sup 4}. • The Au-CNT FET shows very high transconductance (g{sub m}) and carrier mobility (μ{sub h}).

  12. Doped organic transistors operating in the inversion and depletion regime

    Lüssem, Björn; Tietze, Max L.; Kleemann, Hans; Hoßbach, Christoph; Bartha, Johann W.; Zakhidov, Alexander; Leo, Karl

    2013-01-01

    The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. PMID:24225722

  13. Uniformity of fully gravure printed organic field-effect transistors

    Hambsch, M.; Reuter, K.; Stanel, M.; Schmidt, G.; Kempa, H.; Fuegmann, U.; Hahn, U.; Huebler, A.C.

    2010-01-01

    Fully mass-printed organic field-effect transistors were made completely by means of gravure printing. Therefore a special printing layout was developed in order to avoid register problems in print direction. Upon using this layout, contact pads for source-drain electrodes of the transistors are printed together with the gate electrodes in one and the same printing run. More than 50,000 transistors have been produced and by random tests a yield of approximately 75% has been determined. The principle suitability of the gravure printed transistors for integrated circuits has been shown by the realization of ring oscillators.

  14. Recent progress in photoactive organic field-effect transistors.

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-04-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  15. Recent progress in photoactive organic field-effect transistors

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-01-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts. (review)

  16. High-Performance Complementary Transistors and Medium-Scale Integrated Circuits Based on Carbon Nanotube Thin Films.

    Yang, Yingjun; Ding, Li; Han, Jie; Zhang, Zhiyong; Peng, Lian-Mao

    2017-04-25

    Solution-derived carbon nanotube (CNT) network films with high semiconducting purity are suitable materials for the wafer-scale fabrication of field-effect transistors (FETs) and integrated circuits (ICs). However, it is challenging to realize high-performance complementary metal-oxide semiconductor (CMOS) FETs with high yield and stability on such CNT network films, and this difficulty hinders the development of CNT-film-based ICs. In this work, we developed a doping-free process for the fabrication of CMOS FETs based on solution-processed CNT network films, in which the polarity of the FETs was controlled using Sc or Pd as the source/drain contacts to selectively inject carriers into the channels. The fabricated top-gated CMOS FETs showed high symmetry between the characteristics of n- and p-type devices and exhibited high-performance uniformity and excellent scalability down to a gate length of 1 μm. Many common types of CMOS ICs, including typical logic gates, sequential circuits, and arithmetic units, were constructed based on CNT films, and the fabricated ICs exhibited rail-to-rail outputs because of the high noise margin of CMOS circuits. In particular, 4-bit full adders consisting of 132 CMOS FETs were realized with 100% yield, thereby demonstrating that this CMOS technology shows the potential to advance the development of medium-scale CNT-network-film-based ICs.

  17. Molecular materials for organic field-effect transistors

    Mori, T

    2008-01-01

    Organic field-effect transistors are important applications of thin films of molecular materials. A variety of materials have been explored for improving the performance of organic transistors. The materials are conventionally classified as p-channel and n-channel, but not only the performance but also even the carrier polarity is greatly dependent on the combinations of organic semiconductors and electrode materials. In this review, particular emphasis is laid on multi-sulfur compounds such as tetrathiafulvalenes and metal dithiolates. These compounds are components of highly conducting materials such as organic superconductors, but are also used in organic transistors. The charge-transfer complexes are used in organic transistors as active layers as well as electrodes. (topical review)

  18. Progresses in organic field-effect transistors and molecular electronics

    Wu Weiping; Xu Wei; Hu Wenping; Liu Yunqi; Zhu Daoben

    2006-01-01

    In the past years,organic semiconductors have been extensively investigated as electronic materials for organic field-effect transistors (OFETs).In this review,we briefly summarize the current status of organic field-effect transistors including materials design,device physics,molecular electronics and the applications of carbon nanotubes in molecular electronics.Future prospects and investigations required to improve the OFET performance are also involved.

  19. Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

    Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

    2016-01-01

    Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

  20. Highly Sensitive Flexible Pressure Sensors Based on Printed Organic Transistors with Centro-Apically Self-Organized Organic Semiconductor Microstructures.

    Yeo, So Young; Park, Sangsik; Yi, Yeon Jin; Kim, Do Hwan; Lim, Jung Ah

    2017-12-13

    A highly sensitive pressure sensor based on printed organic transistors with three-dimensionally self-organized organic semiconductor microstructures (3D OSCs) was demonstrated. A unique organic transistor with semiconductor channels positioned at the highest summit of printed cylindrical microstructures was achieved simply by printing an organic semiconductor and polymer blend on the plastic substrate without the use of additional etching or replication processes. A combination of the printed organic semiconductor microstructure and an elastomeric top-gate dielectric resulted in a highly sensitive organic field-effect transistor (FET) pressure sensor with a high pressure sensitivity of 1.07 kPa -1 and a rapid response time of <20 ms with a high reliability over 1000 cycles. The flexibility and high performance of the 3D OSC FET pressure sensor were exploited in the successful application of our sensors to real-time monitoring of the radial artery pulse, which is useful for healthcare monitoring, and to touch sensing in the e-skin of a realistic prosthetic hand.

  1. High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

    Nag, M.; Steudel, S.; Bhoolokam, A.; Chasin, A.; Rockele, M.; Myny, K.; Maas, J.; Fritz, T.; Trube, J.; Groeseneken, G.; Heremans, P.

    2014-01-01

    In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of

  2. Laser-Printed Organic Thin-Film Transistors

    Diemer, Peter J.; Harper, Angela F.; Niazi, Muhammad Rizwan; Petty, Anthony J.; Anthony, John E.; Amassian, Aram; Jurchescu, Oana D.

    2017-01-01

    their incorporation in large-scale manufacturing processes. Here, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported. This completely solvent-free additive

  3. High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

    Lin, Yenhung

    2013-06-25

    An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180°C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. High-mobility pyrene-based semiconductor for organic thin-film transistors.

    Cho, Hyunduck; Lee, Sunyoung; Cho, Nam Sung; Jabbour, Ghassan E; Kwak, Jeonghun; Hwang, Do-Hoon; Lee, Changhee

    2013-05-01

    Numerous conjugated oligoacenes and polythiophenes are being heavily studied in the search for high-mobility organic semiconductors. Although many researchers have designed fused aromatic compounds as organic semiconductors for organic thin-film transistors (OTFTs), pyrene-based organic semiconductors with high mobilities and on-off current ratios have not yet been reported. Here, we introduce a new pyrene-based p-type organic semiconductor showing liquid crystal behavior. The thin film characteristics of this material are investigated by varying the substrate temperature during the deposition and the gate dielectric condition using the surface modification with a self-assembled monolayer, and systematically studied in correlation with the performances of transistor devices with this compound. OTFT fabricated under the optimum deposition conditions of this compound, namely, 1,6-bis(5'-octyl-2,2'-bithiophen-5-yl)pyrene (BOBTP) shows a high-performance transistor behavior with a field-effect mobility of 2.1 cm(2) V(-1) s(-1) and an on-off current ratio of 7.6 × 10(6) and enhanced long-term stability compared to the pentacene thin-film transistor.

  5. Light programmable organic transistor memory device based on hybrid dielectric

    Ren, Xiaochen; Chan, Paddy K. L.

    2013-09-01

    We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

  6. Aligning the down-sized organization for high performance

    Cort, G.; Holsapple, K.

    1997-12-31

    The Quality Management Group (QMG) at the Los Alamos National Laboratory provides expert support to the Laboratory`s diverse programs, projects and facilities. Organized as an internal consulting group, the QMG furnishes comprehensive quality management services to requesting organizations throughout the Laboratory. Based upon the needs and expectations of the requester, these services range from classical quality control to regulatory compliance to process characterization and improvement, customer relationship management, information gathering and metrics. In September 1995 the Laboratory Director announced a downsizing effort targeted to reduce the Laboratory`s cost of doing business and thereby improve its competitiveness. The downsizing effort was targeted on support organizations--laboratory divisions, groups, programs, and projects chartered with operating the administrative infrastructure within which Los Alamos` technical programs function. This report discusses the downsizing, its aftermath, strategies for solutions to lower morale, initiatives, and results.

  7. Recent progress in high performance and reliable n-type transition metal oxide-based thin film transistors

    Yeon Kwon, Jang; Kyeong Jeong, Jae

    2015-01-01

    This review gives an overview of the recent progress in vacuum-based n-type transition metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding metal oxide TFTs in terms of fundamental electron structure, device process and reliability have been published. In particular, the required field-effect mobility of TMO TFTs has been increasing rapidly to meet the demands of the ultra-high-resolution, large panel size and three dimensional visual effects as a megatrend of flat panel displays, such as liquid crystal displays, organic light emitting diodes and flexible displays. In this regard, the effects of the TMO composition on the performance of the resulting oxide TFTs has been reviewed, and classified into binary, ternary and quaternary composition systems. In addition, the new strategic approaches including zinc oxynitride materials, double channel structures, and composite structures have been proposed recently, and were not covered in detail in previous review papers. Special attention is given to the advanced device architecture of TMO TFTs, such as back-channel-etch and self-aligned coplanar structure, which is a key technology because of their advantages including low cost fabrication, high driving speed and unwanted visual artifact-free high quality imaging. The integration process and related issues, such as etching, post treatment, low ohmic contact and Cu interconnection, required for realizing these advanced architectures are also discussed. (invited review)

  8. Polyelectrolyte Layer-by-Layer Assembly on Organic Electrochemical Transistors

    Pappa, Anna-Maria

    2017-03-06

    Oppositely charged polyelectrolyte multilayers (PEMs) were built up in a layer-by-layer (LbL) assembly on top of the conducting polymer channel of an organic electrochemical transistor (OECT), aiming to combine the advantages of well-established PEMs with a high performance electronic transducer. The multilayered film is a model system to investigate the impact of biofunctionalization on the operation of OECTs comprising a poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) film as the electrically active layer. Understanding the mechanism of ion injection into the channel that is in direct contact with charged polymer films provides useful insights for novel biosensing applications such as nucleic acid sensing. Moreover, LbL is demonstrated to be a versatile electrode modification tool enabling tailored surface features in terms of thickness, softness, roughness, and charge. LbL assemblies built up on top of conducting polymers will aid the design of new bioelectronic platforms for drug delivery, tissue engineering, and medical diagnostics.

  9. Polyelectrolyte Layer-by-Layer Assembly on Organic Electrochemical Transistors

    Pappa, Anna-Maria; Inal, Sahika; Roy, Kirsty; Zhang, Yi; Pitsalidis, Charalampos; Hama, Adel; Pas, Jolien; Malliaras, George G.; Owens, Roisin M.

    2017-01-01

    Oppositely charged polyelectrolyte multilayers (PEMs) were built up in a layer-by-layer (LbL) assembly on top of the conducting polymer channel of an organic electrochemical transistor (OECT), aiming to combine the advantages of well-established PEMs with a high performance electronic transducer. The multilayered film is a model system to investigate the impact of biofunctionalization on the operation of OECTs comprising a poly(3,4-ethylenedioxythiophene) polystyrenesulfonate (PEDOT:PSS) film as the electrically active layer. Understanding the mechanism of ion injection into the channel that is in direct contact with charged polymer films provides useful insights for novel biosensing applications such as nucleic acid sensing. Moreover, LbL is demonstrated to be a versatile electrode modification tool enabling tailored surface features in terms of thickness, softness, roughness, and charge. LbL assemblies built up on top of conducting polymers will aid the design of new bioelectronic platforms for drug delivery, tissue engineering, and medical diagnostics.

  10. Inexpensive Measuring System for the Characterization of Organic Transistors

    Clara Pérez-Fuster

    2018-01-01

    Full Text Available A measuring module has been specifically designed for the electrical characterization of organic semiconductor devices such as organic field effect transistors (OFETs and organic electrochemical transistors (OECTs according to the IEEE 1620-2008 standard. This device has been tested with OFETs based on 6,13-bis(triisopropylsilylethinylpentacene (TIPS-pentacene. The measuring system has been constructed using a NI-PXIe-1073 chassis with integrated controller and two NI-PXI-4132 programmable high-precision source measure units (SMUs that offer a four-quadrant ± 100 V output, with resolution down to 10 pA. LabVIEW™ has been used to develop the appropriate program. Most of the main OFET parameters included in the IEEE 1620 standard can be measured by means of this device. Although nowadays expensive devices for the characterization of Si-based transistors are available, devices for the characterization of organic transistors are not yet widespread in the market. Fabrication of a specific and flexible module that can be used to characterize this type of transistors would provide a powerful tool to researchers.

  11. Effect of grain boundary on the field-effect mobility of microrod single crystal organic transistors.

    Kim, Jaekyun; Kang, Jingu; Cho, Sangho; Yoo, Byungwook; Kim, Yong-Hoon; Park, Sung Kyu

    2014-11-01

    High-performance microrod single crystal organic transistors based on a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor are fabricated and the effects of grain boundaries on the carrier transport have been investigated. The spin-coating of C8-BTBT and subsequent solvent vapor annealing process enabled the formation of organic single crystals with high aspect ratio in the range of 10 - 20. It was found that the organic field-effect transistors (OFETs) based on these single crystals yield a field-effect mobility and an on/off current ratio of 8.04 cm2/Vs and > 10(5), respectively. However, single crystal OFETs with a kink, in which two single crystals are fused together, exhibited a noticeable drop of field-effect mobility, and we claim that this phenomenon results from the carrier scattering at the grain boundary.

  12. Strategies toward High Performance Organic Photovoltaic Cell: Material and Process

    Kim, Bong Gi

    The power conversion efficiency of organic photovoltaic (OPV) cells has been rapidly improved during the last few years and currently reaches around 10 %. The performance is evenly governed by absorption, exciton diffusion, exciton dissociation, carrier transfer, and collection efficiencies. Establishing a better understanding of OPV device physics combined with the development of new materials for each executive step contributes to this dramatic improvement. This dissertation focuses mainly on material design and development to correlate the intrinsic properties of organic semiconductors and the OPV performance. The introductory Chapter 1 briefly reviews the motivation of OPV research, its working mechanism, and representative organic materials for OPV application. Chapter 2 discusses the modulation of conjugated polymer's (CP's) absorption behavior and an efficient semi-empirical approach to predict CP's energy levels from its constituent monomers' HOMO/LUMO values. A strong acceptor lowered both the HOMO and LUMO levels of the CP, but the LUMO dropped more rapidly which ultimately produced a narrowed band-gap in the electron donating/accepting alternating copolymer system. In addition, the energy level difference between the CP and the constituent monomers converged to a constant value, providing an energy level prediction tool. Chapter 3 illustrates the systematic investigation on the relationship between the molecular structure of an energy harvesting organic dye and the exciton dissociation efficiency. The study showed that the quantum yield decreased as the exciton binding energy increases, and dipole moment direction should be properly oriented in the dye framework in order to improve photo-current generation when used in a dye sensitized photovoltaic device. Chapter 4 demonstrates the ultrasonic-assisted self-assembly of CPs in solution, rapidly and efficiently. Ultrasonication combined with dipolar media accelerated CP's aggregation, and the effect of CP

  13. Operational Stability of Organic Field‐Effect Transistors

    Bobbert, P.A.; Sharma, A.; Matthijssen, S.J.G.; Kemerink, M.; de Leeuw, D.M.

    2012-01-01

    Organic field-effect transistors (OFETs) are considered in technological applications for which low cost or mechanical flexibility are crucial factors. The environmental stability of the organic semiconductors used in OFETs has improved to a level that is now sufficient for commercialization.

  14. High-performance n-type organic semiconductors: incorporating specific electron-withdrawing motifs to achieve tight molecular stacking and optimized energy levels.

    Yun, Sun Woo; Kim, Jong H; Shin, Seunghoon; Yang, Hoichang; An, Byeong-Kwan; Yang, Lin; Park, Soo Young

    2012-02-14

    Novel π–conjugated cyanostilbene-based semiconductors (Hex-3,5-TFPTA and Hex-4-TFPTA) with tight molecular stacking and optimized energy levels are synthesized. Hex-4-TFPTA exhibits high-performance n-type organic field-effect transistor (OFET) properties with electron mobilities as high as 2.14 cm2 V−1s−1 and on-off current ratios Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Transport Mechanisms in Organic Thin-Film Transistors

    Fung, A. W. P.

    1996-03-01

    Recent success in fabricating field-effect transistors with polycrystalline α-sexithiophene (α-6T) has allowed us to study charge transport in this organic semiconductor. The appealing structural property that the oligomer chains are seated almost perpendicular to the substrate provides a model π-conjugated system which we find exhibits band transport at low temperatures. We observe a behavioral transition around 50K which is consistent with the metal-insulator transition in Holstein's small-polaron theory. The fact that we can observe intrinsic behavior means that the ambient-temperature mobility obtained in these transistors is optimal for α-6T. Agreement with the Holstein theory provides us with a prescription for rational design of materials for organic transistor applications. Work done in collaboration with L. Torsi, A. Dodabalapur, L. J. Rothberg and H. E. Katz.

  16. High Charge Carrier Mobility Polymers for Organic Transistors

    Erdmann, Tim

    2017-01-01

    I) Introduction p-Conjugated polymers inherently combine electronic properties of inorganic semiconductor crystals and material characteristics of organic plastics due to their special molecular design. This unique combination has led to developing new unconventional optoelectronic technologies and, further, resulted in the evolution of semiconducting polymers (SCPs) as fundamental components for novel electronic devices, such as organic field-effect transistors (OFETs), organic light-emit...

  17. Bimolecular recombination in ambipolar organic field effect transistors

    Charrier, D.S.H.; Vries, T. de; Mathijssen, S.G.J.; Geluk, E.-J.; Smits, E.C.P.; Kemerink, M.; Janssen, R.A.J.

    2009-01-01

    In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron–hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy

  18. Bimolecular recombination in ambipolar organic field effect transistors

    Charrier, D. S. H.; de Vries, T.; Mathijssen, S. G. J.; Geluk, E. -J.; Smits, E. C. P.; Kemerink, M.; Janssen, R. A. J.

    In ambipolar organic field effect transistors (OFET) the shape of the channel potential is intimately related to the recombination zone width W, and hence to the electron-hole recombination strength. Experimentally, the recombination profile can be assessed by scanning Kelvin probe microscopy

  19. Flexible carbon-based ohmic contacts for organic transistors

    Brandon, Erik (Inventor)

    2007-01-01

    The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

  20. Interface-controlled, high-mobility organic transistors

    Jurchescu, Oana D.; Popinciuc, Mihaita; van Wees, Bart J.; Palstra, Thomas T. M.

    2007-01-01

    The achievement of high mobilities in field-effect transistors (FETs) is one of the main challenges for the widespread application of organic conductors in devices. Good device performance of a single-crystal pentacene FET requires both removal of impurity molecules from the bulk and the

  1. Fully printed metabolite sensor using organic electrochemical transistor

    Scheiblin, Gaëtan; Aliane, Abdelkader; Coppard, Romain; Owens, Róisín. M.; Mailley, Pascal; Malliaras, George G.

    2015-08-01

    As conducting polymer based devices, organic electrochemical transistors (OECTs) are suited for printing process. The convenience of the screen-printing techniques allowed us to design and fabricate OECTs with a selected design and using different gate material. Depending on the material used, we were able to tune the transistor for different biological application. Ag/AgCl gate provided transistor with good transconductance, and electrochemical sensitivity to pH was provided by polyaniline ink. Finally, we validate the enzymatic sensing of glucose and lactate with a Poly(3,4-ethylene dioxythiophene) doped with poly(styrene sulfonate) (PEDOT:PSS) gate often used due to its biocompatible properties. The screen-printing process allowed us to fabricate a large amount of devices in a short period of time, using only commercially available grades of ink, showing by this way the possible transfer to industrial purpose.

  2. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    Fahad, Hossain M.

    2011-10-12

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  3. Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

    Fahad, Hossain M.; Smith, Casey; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2011-01-01

    We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

  4. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  5. Crystalline Organic Pigment-Based Field-Effect Transistors.

    Zhang, Haichang; Deng, Ruonan; Wang, Jing; Li, Xiang; Chen, Yu-Ming; Liu, Kewei; Taubert, Clinton J; Cheng, Stephen Z D; Zhu, Yu

    2017-07-05

    Three conjugated pigment molecules with fused hydrogen bonds, 3,7-diphenylpyrrolo[2,3-f]indole-2,6(1H,5H)-dione (BDP), (E)-6,6'-dibromo-[3,3'-biindolinylidene]-2,2'-dione (IIDG), and 3,6-di(thiophen-2-yl)-2,5-dihydropyrrolo-[3,4-c]pyrrole-1,4-dione (TDPP), were studied in this work. The insoluble pigment molecules were functionalized with tert-butoxylcarbonyl (t-Boc) groups to form soluble pigment precursors (BDP-Boc, IIDG-Boc, and TDPP-Boc) with latent hydrogen bonding. The single crystals of soluble pigment precursors were obtained. Upon simple thermal annealing, the t-Boc groups were removed and the soluble pigment precursor molecules with latent hydrogen bonding were converted into the original pigment molecules with fused hydrogen bonding. Structural analysis indicated that the highly crystalline soluble precursors were directly converted into highly crystalline insoluble pigments, which are usually only achievable by gas-phase routes like physical vapor transport. The distinct crystal structure after the thermal annealing treatment suggests that fused hydrogen bonding is pivotal for the rearrangement of molecules to form a new crystal in solid state, which leads to over 2 orders of magnitude enhancement in charge mobility in organic field-effect transistor (OFET) devices. This work demonstrated that crystalline OFET devices with insoluble pigment molecules can be fabricated by their soluble precursors. The results indicated that a variety of commercially available conjugated pigments could be potential active materials for high-performance OFETs.

  6. Laser-Printed Organic Thin-Film Transistors

    Diemer, Peter J.

    2017-09-20

    Solution deposition of organic optoelectronic materials enables fast roll-to-roll manufacturing of photonic and electronic devices on any type of substrate and at low cost. But controlling the film microstructure when it crystallizes from solution can be challenging. This represents a major limitation of this technology, since the microstructure, in turn, governs the charge transport properties of the material. Further, the solvents typically used are hazardous, which precludes their incorporation in large-scale manufacturing processes. Here, the first ever organic thin-film transistor fabricated with an electrophotographic laser printing process using a standard office laser printer is reported. This completely solvent-free additive manufacturing method allows for simultaneous deposition, purification, and patterning of the organic semiconductor layer. Laser-printed transistors using triisopropylsilylethynyl pentacene as the semiconductor layer are realized on flexible substrates and characterized, making this a successful first demonstration of the potential of laser printing of organic semiconductors.

  7. High-Performance All 2D-Layered Tin Disulfide: Graphene Photodetecting Transistors with Thickness-Controlled Interface Dynamics.

    Chang, Ren-Jie; Tan, Haijie; Wang, Xiaochen; Porter, Benjamin; Chen, Tongxin; Sheng, Yuewen; Zhou, Yingqiu; Huang, Hefu; Bhaskaran, Harish; Warner, Jamie H

    2018-04-18

    Tin disulfide crystals with layered two-dimensional (2D) sheets are grown by chemical vapor deposition using a novel precursor approach and integrated into all 2D transistors with graphene (Gr) electrodes. The Gr:SnS 2 :Gr transistors exhibit excellent photodetector response with high detectivity and photoresponsivity. We show that the response of the all 2D photodetectors depends upon charge trapping at the interface and the Schottky barrier modulation. The thickness-dependent SnS 2 measurements in devices reveal a transition from the interface-dominated response for thin crystals to bulklike response for the thicker SnS 2 crystals, showing the sensitivity of devices fabricated using layered materials on the number of layers. These results show that SnS 2 has photosensing performance when combined with Gr electrodes that is comparable to other 2D transition metal dichalcogenides of MoS 2 and WS 2 .

  8. Transparent ambipolar organic thin film transistors based on multilayer transparent source-drain electrodes

    Zhang, Nan; Hu, Yongsheng, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn; Lin, Jie; Li, Yantao; Liu, Xingyuan, E-mail: huyongsheng@ciomp.ac.cn, E-mail: liuxy@ciomp.ac.cn [State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033 (China)

    2016-08-08

    A fabrication method for transparent ambipolar organic thin film transistors with transparent Sb{sub 2}O{sub 3}/Ag/Sb{sub 2}O{sub 3} (SAS) source and drain electrodes has been developed. A pentacene/N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic di-imide (PTCDI-C13) bilayer heterojunction is used as the active semiconductor. The electrodes are deposited by room temperature electron beam evaporation. The devices are fabricated without damaging the active layers. The SAS electrodes have high transmittance (82.5%) and low sheet resistance (8 Ω/sq). High performance devices with hole and electron mobilities of 0.3 cm{sup 2}/V s and 0.027 cm{sup 2}/V s, respectively, and average visible range transmittance of 72% were obtained. These transistors have potential for transparent logic integrated circuit applications.

  9. High-performance a-IGZO thin-film transistor with conductive indium-tin-oxide buried layer

    Ahn, Min-Ju; Cho, Won-Ju

    2017-10-01

    In this study, we fabricated top-contact top-gate (TCTG) structure of amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs) with a thin buried conductive indium-tin oxide (ITO) layer. The electrical performance of a-IGZO TFTs was improved by inserting an ITO buried layer under the IGZO channel. Also, the effect of the buried layer's length on the electrical characteristics of a-IGZO TFTs was investigated. The electrical performance of the transistors improved with increasing the buried layer's length: a large on/off current ratio of 1.1×107, a high field-effect mobility of 35.6 cm2/Vs, a small subthreshold slope of 116.1 mV/dec, and a low interface trap density of 4.2×1011 cm-2eV-1 were obtained. The buried layer a-IGZO TFTs exhibited enhanced transistor performance and excellent stability against the gate bias stress.

  10. Practical guide to organic field effect transistor circuit design

    Sou, Antony

    2016-01-01

    The field of organic electronics spans a very wide range of disciplines from physics and chemistry to hardware and software engineering. This makes the field of organic circuit design a daunting prospect full of intimidating complexities, yet to be exploited to its true potential. Small focussed research groups also find it difficult to move beyond their usual boundaries and create systems-on-foil that are comparable with the established silicon world.This book has been written to address these issues, intended for two main audiences; firstly, physics or materials researchers who have thus far designed circuits using only basic drawing software; and secondly, experienced silicon CMOS VLSI design engineers who are already knowledgeable in the design of full custom transistor level circuits but are not familiar with organic devices or thin film transistor (TFT) devices.In guiding the reader through the disparate and broad subject matters, a concise text has been written covering the physics and chemistry of the...

  11. Organic transistors with high thermal stability for medical applications.

    Kuribara, Kazunori; Wang, He; Uchiyama, Naoya; Fukuda, Kenjiro; Yokota, Tomoyuki; Zschieschang, Ute; Jaye, Cherno; Fischer, Daniel; Klauk, Hagen; Yamamoto, Tatsuya; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Sekitani, Tsuyoshi; Loo, Yueh-Lin; Someya, Takao

    2012-03-06

    The excellent mechanical flexibility of organic electronic devices is expected to open up a range of new application opportunities in electronics, such as flexible displays, robotic sensors, and biological and medical electronic applications. However, one of the major remaining issues for organic devices is their instability, especially their thermal instability, because low melting temperatures and large thermal expansion coefficients of organic materials cause thermal degradation. Here we demonstrate the fabrication of flexible thin-film transistors with excellent thermal stability and their viability for biomedical sterilization processes. The organic thin-film transistors comprise a high-mobility organic semiconductor, dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene, and thin gate dielectrics comprising a 2-nm-thick self-assembled monolayer and a 4-nm-thick aluminium oxide layer. The transistors exhibit a mobility of 1.2 cm(2) V(-1)s(-1) within a 2 V operation and are stable even after exposure to conditions typically used for medical sterilization.

  12. Organic field-effect transistors using single crystals

    Hasegawa, Tatsuo; Takeya, Jun

    2009-01-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. (topical review)

  13. Organic field-effect transistors using single crystals

    Tatsuo Hasegawa and Jun Takeya

    2009-01-01

    Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  14. Fired Up by Commitment, Example, and Values: How High-Performance Organizations Develop Leadership

    Kersh, Kevin

    2002-01-01

    ...: Is there something more vital, more necessary in developing leadership abilities? Case studies of five high-performing organizations presented here suggest that three things lay at the foundation of developing leadership abilities...

  15. Ambipolar organic heterojunction transistors with various p-type semiconductors

    Shi Jianwu; Wang Haibo; Song De; Tian Hongkun; Geng Yanhou; Yan Donghang

    2008-01-01

    Ambipolar transport has been realized in organic heterojunction transistors with metal phthalocyanines, phenanthrene-based conjugated oligomers as the first semiconductors and copper-hexadecafluoro-phthalocyanine as the second semiconductor. The electron and hole mobilities of ambipolar devices with rod-like molecules were comparable to the corresponding single component devices, while the carrier mobility of ambipolar devices with disk-like molecules was much lower than the corresponding single component devices. The much difference of their device performance was attributed to the roughness of the first semiconductor films, which was original from their distinct growth habits. The flat and continuous films for the first semiconductors layer can lead to a smooth heterojunction interface, and obtained a high device performance for ambipolar organic heterojunction transistors

  16. High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor.

    Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Wang, Jianlong; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

    2016-10-07

    Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a high I on/I off current ratio of about 1 × 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device.

  17. Balanced Ambipolar Organic Field-Effect Transistors by Polymer Preaggregation.

    Janasz, Lukasz; Luczak, Adam; Marszalek, Tomasz; Dupont, Bertrand G R; Jung, Jaroslaw; Ulanski, Jacek; Pisula, Wojciech

    2017-06-21

    Ambipolar organic field-effect transistors (OFETs) based on heterojunction active films still suffer from an imbalance in the transport of electrons and holes. This problem is related to an uncontrolled phase separation between the donor and acceptor organic semiconductors in the thin films. In this work, we have developed a concept to improve the phase separation in heterojunction transistors to enhance their ambipolar performance. This concept is based on preaggregation of the donor polymer, in this case poly(3-hexylthiophene) (P3HT), before solution mixing with the small-molecular-weight acceptor, phenyl-C61-butyric acid methyl ester (PCBM). The resulting heterojunction transistor morphology consists of self-assembled P3HT fibers embedded in a PCBM matrix, ensuring balanced mobilities reaching 0.01 cm 2 /V s for both holes and electrons. These are the highest mobility values reported so far for ambipolar OFETs based on P3HT/PCBM blends. Preaggregation of the conjugated polymer before fabricating binary blends can be regarded as a general concept for a wider range of semiconducting systems applicable in organic electronic devices.

  18. Solvent-free directed patterning of a highly ordered liquid crystalline organic semiconductor via template-assisted self-assembly for organic transistors.

    Kim, Aryeon; Jang, Kwang-Suk; Kim, Jinsoo; Won, Jong Chan; Yi, Mi Hye; Kim, Hanim; Yoon, Dong Ki; Shin, Tae Joo; Lee, Myong-Hoon; Ka, Jae-Won; Kim, Yun Ho

    2013-11-20

    Highly ordered organic semiconductor micropatterns of the liquid-crystalline small molecule 2,7-didecylbenzothienobenzothiophene (C10 -BTBT) are fabricated using a simple method based on template-assisted self-assembly (TASA). The liquid crystallinity of C10 -BTBT allows solvent-free fabrication of high-performance printed organic field-effect transistors (OFETs). © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

    Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

    2018-05-01

    The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

  20. High-Performance Ink-Synthesized Cu-Gate Thin-Film Transistor with Diffusion Barrier Formation

    Woo, Whang Je; Nam, Taewook; Oh, Il-Kwon; Maeng, Wanjoo; Kim, Hyungjun

    2018-02-01

    The improved electrical properties of Cu-gate thin-film transistors (TFTs) using an ink-synthesizing process were studied; this technology enables a low-cost and large area process for the display industry. We investigated the film properties and the effects of the ink-synthesized Cu layer in detail with respect to device characteristics. The mobility and reliability of the devices were significantly improved by applying a diffusion barrier at the interface between the Cu gate and the gate insulator. By using a TaN diffusion barrier layer, considerably improved and stabilized ink-Cu gated TFTs could be realized, comparable to sputtered-Cu gated TFTs under positive bias temperature stress measurements.

  1. Direct Effect of Dielectric Surface Energy on Carrier Transport in Organic Field-Effect Transistors.

    Zhou, Shujun; Tang, Qingxin; Tian, Hongkun; Zhao, Xiaoli; Tong, Yanhong; Barlow, Stephen; Marder, Seth R; Liu, Yichun

    2018-05-09

    The understanding of the characteristics of gate dielectric that leads to optimized carrier transport remains controversial, and the conventional studies applied organic semiconductor thin films, which introduces the effect of dielectric on the growth of the deposited semiconductor thin films and hence only can explore the indirect effects. Here, we introduce pregrown organic single crystals to eliminate the indirect effect (semiconductor growth) in the conventional studies and to undertake an investigation of the direct effect of dielectric on carrier transport. It is shown that the matching of the polar and dispersive components of surface energy between semiconductor and dielectric is favorable for higher mobility. This new empirical finding may show the direct relationship between dielectric and carrier transport for the optimized mobility of organic field-effect transistors and hence show a promising potential for the development of next-generation high-performance organic electronic devices.

  2. Simultaneous analysis of small organic acids and humic acids using high performance size exclusion chromatography

    Qin, X.P.; Liu, F.; Wang, G.C.; Weng, L.P.

    2012-01-01

    An accurate and fast method for simultaneous determination of small organic acids and much larger humic acids was developed using high performance size exclusion chromatography. Two small organic acids, i.e. salicylic acid and 2,3-dihydroxybenzoic acid, and one purified humic acid material were used

  3. Towards colorless transparent organic transistors: potential of benzothieno[3,2-b]benzothiophene-based wide-gap semiconductors.

    Moon, Hanul; Cho, Hyunsu; Kim, Mincheol; Takimiya, Kazuo; Yoo, Seunghyup

    2014-05-21

    Colorless, highly transparent organic thin-film transistors (TOTFTs) with high performance are realized based on benzothieno[3,2-b]benzothiophene (BTBT) derivatives that simultaneously exhibit a wide energy gap and high transport properties. Multilayer transparent source/drain electrodes maintain the transparency, and ultrathin fluoropolymer dielectric layers enable stable, low-voltage operation of the proposed TOTFTs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Intrinsically stretchable and healable semiconducting polymer for organic transistors.

    Oh, Jin Young; Rondeau-Gagné, Simon; Chiu, Yu-Cheng; Chortos, Alex; Lissel, Franziska; Wang, Ging-Ji Nathan; Schroeder, Bob C; Kurosawa, Tadanori; Lopez, Jeffrey; Katsumata, Toru; Xu, Jie; Zhu, Chenxin; Gu, Xiaodan; Bae, Won-Gyu; Kim, Yeongin; Jin, Lihua; Chung, Jong Won; Tok, Jeffrey B-H; Bao, Zhenan

    2016-11-17

    Thin-film field-effect transistors are essential elements of stretchable electronic devices for wearable electronics. All of the materials and components of such transistors need to be stretchable and mechanically robust. Although there has been recent progress towards stretchable conductors, the realization of stretchable semiconductors has focused mainly on strain-accommodating engineering of materials, or blending of nanofibres or nanowires into elastomers. An alternative approach relies on using semiconductors that are intrinsically stretchable, so that they can be fabricated using standard processing methods. Molecular stretchability can be enhanced when conjugated polymers, containing modified side-chains and segmented backbones, are infused with more flexible molecular building blocks. Here we present a design concept for stretchable semiconducting polymers, which involves introducing chemical moieties to promote dynamic non-covalent crosslinking of the conjugated polymers. These non-covalent crosslinking moieties are able to undergo an energy dissipation mechanism through breakage of bonds when strain is applied, while retaining high charge transport abilities. As a result, our polymer is able to recover its high field-effect mobility performance (more than 1 square centimetre per volt per second) even after a hundred cycles at 100 per cent applied strain. Organic thin-film field-effect transistors fabricated from these materials exhibited mobility as high as 1.3 square centimetres per volt per second and a high on/off current ratio exceeding a million. The field-effect mobility remained as high as 1.12 square centimetres per volt per second at 100 per cent strain along the direction perpendicular to the strain. The field-effect mobility of damaged devices can be almost fully recovered after a solvent and thermal healing treatment. Finally, we successfully fabricated a skin-inspired stretchable organic transistor operating under deformations that might be

  5. Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2016-03-09

    Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Micro-patterned ZnO semiconductors for high performance thin film transistors via chemical imprinting with a PDMS stamp.

    Seong, Kieun; Kim, Kyongjun; Park, Si Yun; Kim, Youn Sang

    2013-04-07

    Chemical imprinting was conducted on ZnO semiconductor films via a chemical reaction at the contact regions between a micro-patterned PDMS stamp and ZnO films. In addition, we applied the chemical imprinting on Li doped ZnO thin films for high performance TFTs fabrication. The representative micro-patterned Li doped ZnO TFTs showed a field effect mobility of 4.2 cm(2) V(-1) s(-1) after sintering at 300 °C.

  7. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Joong-Won Shin

    2017-07-01

    Full Text Available In this paper, we investigate a low thermal budget post-deposition-annealing (PDA process for amorphous In-Ga-ZnO (a-IGZO oxide semiconductor thin-film-transistors (TFTs. To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA and rapid thermal annealing (RTA methods were applied, and the results were compared with those of the conventional annealing (CTA method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C and short annealing time (2 min because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  8. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors

    Jiawei Zhang

    2017-03-01

    Full Text Available Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO and p-type tin monoxide (SnO is presented. The IGZO thin-film transistor (TFT shows a linear mobility of 11.9 cm2/(V∙s and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm2/(V∙s and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

  9. High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors.

    Zhang, Jiawei; Yang, Jia; Li, Yunpeng; Wilson, Joshua; Ma, Xiaochen; Xin, Qian; Song, Aimin

    2017-03-21

    Oxide semiconductors are regarded as promising materials for large-area and/or flexible electronics. In this work, a ring oscillator based on n-type indium-gallium-zinc-oxide (IGZO) and p-type tin monoxide (SnO) is presented. The IGZO thin-film transistor (TFT) shows a linear mobility of 11.9 cm²/(V∙s) and a threshold voltage of 12.2 V. The SnO TFT exhibits a mobility of 0.51 cm²/(V∙s) and a threshold voltage of 20.1 V which is suitable for use with IGZO TFTs to form complementary circuits. At a supply voltage of 40 V, the complementary inverter shows a full output voltage swing and a gain of 24 with both TFTs having the same channel length/channel width ratio. The three-stage ring oscillator based on IGZO and SnO is able to operate at 2.63 kHz and the peak-to-peak oscillation amplitude reaches 36.1 V at a supply voltage of 40 V. The oxide-based complementary circuits, after further optimization of the operation voltage, may have wide applications in practical large-area flexible electronics.

  10. Low thermal budget annealing technique for high performance amorphous In-Ga-ZnO thin film transistors

    Shin, Joong-Won; Cho, Won-Ju

    2017-07-01

    In this paper, we investigate a low thermal budget post-deposition-annealing (PDA) process for amorphous In-Ga-ZnO (a-IGZO) oxide semiconductor thin-film-transistors (TFTs). To evaluate the electrical characteristics and reliability of the TFTs after the PDA process, microwave annealing (MWA) and rapid thermal annealing (RTA) methods were applied, and the results were compared with those of the conventional annealing (CTA) method. The a-IGZO TFTs fabricated with as-deposited films exhibited poor electrical characteristics; however, their characteristics were improved by the proposed PDA process. The CTA-treated TFTs had excellent electrical properties and stability, but the CTA method required high temperatures and long processing times. In contrast, the fabricated RTA-treated TFTs benefited from the lower thermal budget due to the short process time; however, they exhibited poor stability. The MWA method uses a low temperature (100 °C) and short annealing time (2 min) because microwaves transfer energy directly to the substrate, and this method effectively removed the defects in the a-IGZO TFTs. Consequently, they had a higher mobility, higher on-off current ratio, lower hysteresis voltage, lower subthreshold swing, and higher interface trap density than TFTs treated with CTA or RTA, and exhibited excellent stability. Based on these results, low thermal budget MWA is a promising technology for use on various substrates in next generation displays.

  11. High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

    Tian, Hongzheng; Wang, Xudong; Zhu, Yuankun; Liao, Lei; Wang, Xianying; Wang, Jianlu; Hu, Weida

    2017-01-01

    High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm2/Vs and a large transconductance of 2.5 μS due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 μC/cm2 is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9 V and a high source-drain on/off current ratio of more than 107 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features.

  12. Demonstration of high-performance p-type tin oxide thin-film transistors using argon-plasma surface treatments

    Bae, Sang-Dae; Kwon, Soo-Hun; Jeong, Hwan-Seok; Kwon, Hyuck-In

    2017-07-01

    In this work, we investigated the effects of low-temperature argon (Ar)-plasma surface treatments on the physical and chemical structures of p-type tin oxide thin-films and the electrical performance of p-type tin oxide thin-film transistors (TFTs). From the x-ray photoelectron spectroscopy measurement, we found that SnO was the dominant phase in the deposited tin oxide thin-film, and the Ar-plasma treatment partially transformed the tin oxide phase from SnO to SnO2 by oxidation. The resistivity of the tin oxide thin-film increased with the plasma-treatment time because of the reduced hole concentration. In addition, the root-mean-square roughness of the tin oxide thin-film decreased as the plasma-treatment time increased. The p-type oxide TFT with an Ar-plasma-treated tin oxide thin-film exhibited excellent electrical performance with a high current on-off ratio (5.2 × 106) and a low off-current (1.2 × 10-12 A), which demonstrates that the low-temperature Ar-plasma treatment is a simple and effective method for improving the electrical performance of p-type tin oxide TFTs.

  13. High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

    Nedic, Stanko; Welland, Mark; Tea Chun, Young; Chu, Daping; Hong, Woong-Ki

    2014-01-01

    A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10 5 , a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10 4 s

  14. Prediction and theoretical characterization of p-type organic semiconductor crystals for field-effect transistor applications.

    Atahan-Evrenk, Sule; Aspuru-Guzik, Alán

    2014-01-01

    The theoretical prediction and characterization of the solid-state structure of organic semiconductors has tremendous potential for the discovery of new high performance materials. To date, the theoretical analysis mostly relied on the availability of crystal structures obtained through X-ray diffraction. However, the theoretical prediction of the crystal structures of organic semiconductor molecules remains a challenge. This review highlights some of the recent advances in the determination of structure-property relationships of the known organic semiconductor single-crystals and summarizes a few available studies on the prediction of the crystal structures of p-type organic semiconductors for transistor applications.

  15. Structured-gate organic field-effect transistors

    Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

    2012-01-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

  16. Structured-gate organic field-effect transistors

    Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

    2012-06-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

  17. Characterization of natural organic colorants in historical and art objects by high-performance liquid chromatography.

    Pauk, Volodymyr; Barták, Petr; Lemr, Karel

    2014-12-01

    High-performance liquid chromatography plays an important role in analysis of historical organic colorants. A number of papers have been published in this field over the last 30 years. Classification of the most commonly used natural dyes and an overview of high-performance liquid chromatography methods with main focus on recent works (2008 to the beginning of 2014) are provided. The review deals with an entire analytical protocol covering sample preparation, chromatographic separation, and suitable detection (UV/visible and fluorescent spectroscopy and mass spectrometric techniques). High-performance liquid chromatography has been successfully used in the complete characterization of some organic dyestuffs present in historical and art objects. The possibilities and difficulties for identification of natural sources of historical colorants are also discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. 3D NANOTUBE FIELD EFFECT TRANSISTORS FOR HYBRID HIGH-PERFORMANCE AND LOW-POWER OPERATION WITH HIGH CHIP-AREA EFFICIENCY

    Fahad, Hossain M.

    2014-03-01

    scaling on silicon, the amount of current generated per device has to be increased while keeping short channel effects and off-state leakage at bay. The objective of this doctoral thesis is the investigation of an innovative vertical silicon based architecture called the silicon nanotube field effect transistor (Si NTFET). This topology incorporates a dual inner/outer core/shell gate stack strategy to control the volume inversion properties in a hollow silicon 1D quasi-nanotube under a tight electrostatic configuration. Together with vertically aligned source and drain, the Si NTFET is capable of very high on-state performance (drive current) in an area-efficient configuration as opposed to arrays of gate-all-around nanowires, while maintaining leakage characteristics similar to a single nanowire. Such a device architecture offsets the need of device arraying that is needed with fin and nanowire architectures. Extensive simulations are used to validate the potential benefits of Si NTFETs over GAA NWFETs on a variety of platforms such as conventional MOSFETs, tunnel FETs, junction-less FETs. This thesis demonstrates a novel CMOS compatible process flow to fabricate vertical nanotube transistors that offer a variety of advantages such as lithography-independent gate length definition, integration of epitaxially grown silicon nanotubes with spacer based gate dielectrics and abrupt in-situ doped source/drain junctions. Experimental measurement data will showcase the various materials and processing challenges in fabricating these devices. Finally, an extension of this work to topologically transformed wavy channel FinFETs is also demonstrated keeping in line with the theme of area efficient high-performance electronics.

  19. High performance inkjet-printed metal oxide thin film transistors via addition of insulating polymer with proper molecular weight

    Sun, Dawei; Chen, Cihai; Zhang, Jun; Wu, Xiaomin; Chen, Huipeng; Guo, Tailiang

    2018-01-01

    Fabrication of metal oxide thin film transistor (MOTFT) arrays using the inkjet printing process has caused tremendous interest for low-cost and large-area flexible electronic devices. However, the inkjet-printed MOTFT arrays usually exhibited a non-uniform geometry due to the coffee ring effect, which restricted their commercial application. Therefore, in this work, a strategy is reported to control the geometry and enhance device performance of inkjet-printed MOTFT arrays by the addition of an insulating polymer to the precursor solution prior to film deposition. Moreover, the impact of the polymer molecular weight (MW) on the geometry, chemical constitution, crystallization, and MOTFT properties of inkjet-printed metal oxide depositions was investigated. The results demonstrated that with an increase of MW of polystyrene (PS) from 2000 to 200 000, the coffee ring was gradually faded and the coffee ring effect was completely eliminated when MW reached 200 000, which is associated with the enhanced viscosity with the insulating polymer, providing a high resistance to the outward capillary flow, which facilitated the depinning of the contact line, leading to the elimination of the coffee ring. More importantly, the carrier mobility increased significantly from 4.2 cm2 V-1 s-1 up to 13.7 cm2 V-1 s-1 as PS MW increased from 2000 to 200 000, which was about 3 times that of the pristine In2O3 TFTs. Grazing incidence X-ray diffraction and X-ray photoelectron spectroscopy results indicated that PS doping of In2O3 films not only frustrated crystallization but also altered chemical constitution by enhancing the formation of the M-O structure, both of which facilitated the carrier transport. These results demonstrated that the simple polymer additive process provides a promising method that can efficiently control the geometry of MO arrays during inkjet printing and maximize the device performance of MOTFT arrays, which showed great potential for the application in next

  20. Room-Temperature Fabrication of High-Performance Amorphous In-Ga-Zn-O/Al2O3 Thin-Film Transistors on Ultrasmooth and Clear Nanopaper.

    Ning, Honglong; Zeng, Yong; Kuang, Yudi; Zheng, Zeke; Zhou, Panpan; Yao, Rihui; Zhang, Hongke; Bao, Wenzhong; Chen, Gang; Fang, Zhiqiang; Peng, Junbiao

    2017-08-23

    Integrating biodegradable cellulose nanopaper into oxide thin-film transistors (TFTs) for next generation flexible and green flat panel displays has attracted great interest because it offers a viable solution to address the rapid increase of electronic waste that poses a growing ecological problem. However, a compromise between device performance and thermal annealing remains an obstacle for achieving high-performance nanopaper TFTs. In this study, a high-performance bottom-gate IGZO/Al 2 O 3 TFT with a dual-layer channel structure was initially fabricated on a highly transparent, clear, and ultrasmooth nanopaper substrate via conventional physical vapor deposition approaches, without further thermal annealing processing. Purified nanofibrillated cellulose with a width of approximately 3.7 nm was used to prepare nanopaper with excellent optical properties (92% transparency, 0.85% transmission haze) and superior surface roughness (Rq is 1.8 nm over a 5 × 5 μm 2 scanning area). More significantly, a bilayer channel structure (IGZO/Al 2 O 3 ) was adopted to fabricate high performance TFT on this nanopaper substrate without thermal annealing and the device exhibits a saturation mobility of 15.8 cm 2 /(Vs), an I on /I off ratio of 4.4 × 10 5 , a threshold voltage (V th ) of -0.42 V, and a subthreshold swing (SS) of 0.66 V/dec. The room-temperature fabrication of high-performance IGZO/Al 2 O 3 TFTs on such nanopaper substrate without thermal annealing treatment brings industry a step closer to realizing inexpensive, flexible, lightweight, and green paper displays.

  1. High mobility n-type organic thin-film transistors deposited at room temperature by supersonic molecular beam deposition

    Chiarella, F., E-mail: fabio.chiarella@spin.cnr.it; Barra, M.; Ciccullo, F.; Cassinese, A. [CNR-SPIN and Physics Department, University of Naples, Piazzale Tecchio 80, I-80125 Naples (Italy); Toccoli, T.; Aversa, L.; Tatti, R.; Verucchi, R. [IMEM-CNR-FBK Division of Trento, Via alla Cascata 56/C, I-38123 Povo (Italy); Iannotta, S. [IMEM-CNR, Parco Area delle Scienze 37/A, I-43124 Parma (Italy)

    2014-04-07

    In this paper, we report on the fabrication of N,N′-1H,1H-perfluorobutil dicyanoperylenediimide (PDIF-CN{sub 2}) organic thin-film transistors by Supersonic Molecular Beam Deposition. The devices exhibit mobility up to 0.2 cm{sup 2}/V s even if the substrate is kept at room temperature during the organic film growth, exceeding by three orders of magnitude the electrical performance of those grown at the same temperature by conventional Organic Molecular Beam Deposition. The possibility to get high-mobility n-type transistors avoiding thermal treatments during or after the deposition could significantly extend the number of substrates suitable to the fabrication of flexible high-performance complementary circuits by using this compound.

  2. Interface engineering of semiconductor/dielectric heterojunctions toward functional organic thin-film transistors.

    Zhang, Hongtao; Guo, Xuefeng; Hui, Jingshu; Hu, Shuxin; Xu, Wei; Zhu, Daoben

    2011-11-09

    Interface modification is an effective and promising route for developing functional organic field-effect transistors (OFETs). In this context, however, researchers have not created a reliable method of functionalizing the interfaces existing in OFETs, although this has been crucial for the technological development of high-performance CMOS circuits. Here, we demonstrate a novel approach that enables us to reversibly photocontrol the carrier density at the interface by using photochromic spiropyran (SP) self-assembled monolayers (SAMs) sandwiched between active semiconductors and gate insulators. Reversible changes in dipole moment of SPs in SAMs triggered by lights with different wavelengths produce two distinct built-in electric fields on the OFET that can modulate the channel conductance and consequently threshold voltage values, thus leading to a low-cost noninvasive memory device. This concept of interface functionalization offers attractive new prospects for the development of organic electronic devices with tailored electronic and other properties.

  3. Performance improvement of organic thin film transistors by using active layer with sandwich structure

    Ni, Yao; Zhou, Jianlin; Kuang, Peng; Lin, Hui; Gan, Ping; Hu, Shengdong; Lin, Zhi

    2017-08-01

    We report organic thin film transistors (OTFTs) with pentacene/fluorinated copper phthalo-cyanine (F16CuPc)/pentacene (PFP) sandwich configuration as active layers. The sandwich devices not only show hole mobility enhancement but also present a well control about threshold voltage and off-state current. By investigating various characteristics, including current-voltage hysteresis, organic film morphology, capacitance-voltage curve and resistance variation of active layers carefully, it has been found the performance improvement is mainly attributed to the low carrier traps and the higher conductivity of the sandwich active layer due to the additional induced carriers in F16CuPc/pentacene. Therefore, using proper multiple active layer is an effective way to gain high performance OTFTs.

  4. High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

    Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

    2016-09-01

    We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

  5. Multicolored Nanofiber Based Organic Light-Emitting Transistor

    With Jensen, Per Baunegaard; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    For optoelectronic applications, organic semiconductors have several advantages over their inorganic counterparts such as facile synthesis, tunability via synthetic chemistry, and low temperature processing. Self-assembled, molecular crystalline nanofibers are of particular interest as they could...... form ultra-small light-emitters in future nanophotonic applications. Such organic nanofibers exhibit many interesting optical properties including polarized photo- and electroluminescence, waveguiding, and emission color tunability. We here present a first step towards a multicolored, electrically...... driven device by combining nanofibers made from two different molecules, parahexaphenylene (p6P) and 5,5´-Di-4-biphenyl-2,2´-bithiophene (PPTTPP), which emits blue and green light, respectively. The organic nanofibers are implemented on a bottom gate/bottom contact field-effect transistor platform using...

  6. High-performance flexible thin-film transistors fabricated using print-transferrable polycrystalline silicon membranes on a plastic substrate

    Qin, Guoxuan; Yuan, Hao-Chih; Ma, Zhenqiang; Yang, Hongjun; Zhou, Weidong

    2011-01-01

    Inexpensive polycrystalline Si (poly-Si) with large grain size is highly desirable for flexible electronics applications. However, it is very challenging to directly deposit high-quality poly-Si on plastic substrates due to processing constrictions, such as temperature tolerance and residual stress. In this paper, we present our study on poly-Si membranes that are stress free and most importantly, are transferrable to any substrate including a low-temperature polyethylene terephthalate (PET) substrate. We formed poly-Si-on-insulator by first depositing small-grain size poly-Si on an oxidized Si wafer. We then performed high-temperature annealing for recrystallization to obtain larger grain size. After selective doping on the poly-Si-on-insulator, buried oxide was etched away. By properly patterning the poly-Si layer, residual stress in the released poly-Si membranes was completely relaxed. The flat membrane topology allows the membranes to be print transferred to any substrates. High-performance TFTs were demonstrated on the transferred poly-Si membranes on a PET substrate

  7. Red light sensitive heterojunction organic field-effect transistors based on neodymium phthalocyanine as photosensitive layer

    Lv, Wenli; Tang, Yu [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Yao, Bo [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Department of Physics, Shaoxing University, Shaoxing 312000 (China); Zhou, Maoqing; Luo, Xiao; Li, Yao; Zhong, Junkang; Sun, Lei [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Peng, Yingquan, E-mail: yqpeng@lzu.edu.cn [Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China); Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, South Tianshui Road 222#, Lanzhou 730000 (China)

    2015-08-31

    Compared with organic photodiodes, photoresponsive organic field-effect transistors (photOFETs) exhibit higher sensitivity and lower noise. The performance of photOFETs based on conventional single layer structure is generally poor due to the low carrier mobility of the active channel materials. We demonstrate a high performance photOFET operating in red light with a structure of C60/neodymium phthalocyanine (NdPc{sub 2}) planar heterojunction. PhotOFETs based on single-layer NdPc{sub 2} and C60/NdPc{sub 2} heterojunction (denoted as NdPc{sub 2}-photOFETs and C60/NdPc{sub 2}-photOFETs, respectively) were fabricated and characterized. It is concluded that the photOFETs with heterojunction structure showed superior performance compared to that of single layer photOFETs. And for red light with a wavelength of 655 nm, C60/NdPc{sub 2}-photOFETs exhibited a large photoresponsivity of ~ 0.8 A/W, which is approximately 62 times larger than that of NdPc{sub 2}-photOFETs under the same conditions. The high performance of C60/NdPc{sub 2}-photOFETs is attributed to its high light absorption coefficient, high exciton dissociation efficiency and high carrier mobility. - Highlights: • The mobility of light-sensitive organic materials is generally low. • We fabricated C60/NdPc{sub 2} photoresponsive organic field-effect transistors (photOFETs). • The performance of C60/NdPc{sub 2} photOFETs is superior than single-layer NdPc{sub 2} photOFETs. • C60/NdPc{sub 2} photOFETs exhibited a large photoresponsivity of ~ 0.8 A/W for red light.

  8. Charge transport in organic transistors accounting for a wide distribution of carrier energies, Part I : Theory

    Torricelli, F.

    2012-01-01

    An extended theory of carrier hopping transport in organic transistors is proposed. According to many experimental studies, the density of localized states in organic thin-film transistors can be described by a double-exponential function. In this work, using a percolation model of hopping, the

  9. Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

    Kang, Minji; Hwang, Hansu; Park, Won-Tae; Khim, Dongyoon; Yeo, Jun-Seok; Kim, Yunseul; Kim, Yeon-Ju; Noh, Yong-Young; Kim, Dong-Yu

    2017-01-25

    We report on the fabrication of an organic thin-film semiconductor formed using a blend solution of soluble ambipolar small molecules and an insulating polymer binder that exhibits vertical phase separation and uniform film formation. The semiconductor thin films are produced in a single step from a mixture containing a small molecular semiconductor, namely, quinoidal biselenophene (QBS), and a binder polymer, namely, poly(2-vinylnaphthalene) (PVN). Organic field-effect transistors (OFETs) based on QBS/PVN blend semiconductor are then assembled using top-gate/bottom-contact device configuration, which achieve almost four times higher mobility than the neat QBS semiconductor. Depth profile via secondary ion mass spectrometry and atomic force microscopy images indicate that the QBS domains in the films made from the blend are evenly distributed with a smooth morphology at the bottom of the PVN layer. Bias stress test and variable-temperature measurements on QBS-based OFETs reveal that the QBS/PVN blend semiconductor remarkably reduces the number of trap sites at the gate dielectric/semiconductor interface and the activation energy in the transistor channel. This work provides a one-step solution processing technique, which makes use of soluble ambipolar small molecules to form a thin-film semiconductor for application in high-performance OFETs.

  10. Influence of disorder on transfer characteristics of organic electrochemical transistors

    Friedlein, Jacob T.; Rivnay, Jonathan; Dunlap, David H.; McCulloch, Iain; Shaheen, Sean E.; McLeod, Robert R.; Malliaras, George G.

    2017-01-01

    Organic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications.

  11. Influence of disorder on transfer characteristics of organic electrochemical transistors

    Friedlein, Jacob T.

    2017-07-13

    Organic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications.

  12. Influence of disorder on transfer characteristics of organic electrochemical transistors

    Friedlein, Jacob T.; Rivnay, Jonathan; Dunlap, David H.; McCulloch, Iain; Shaheen, Sean E.; McLeod, Robert R.; Malliaras, George G.

    2017-07-01

    Organic electrochemical transistors (OECTs) are receiving a great deal of attention as transducers of biological signals due to their high transconductance. A ubiquitous property of these devices is the non-monotonic dependence of transconductance on gate voltage. However, this behavior is not described by existing models. Using OECTs made of materials with different chemical and electrical properties, we show that this behavior arises from the influence of disorder on the electronic transport properties of the organic semiconductor and occurs even in the absence of contact resistance. These results imply that the non-monotonic transconductance is an intrinsic property of OECTs and cannot be eliminated by device design or contact engineering. Finally, we present a model based on the physics of electronic conduction in disordered materials. This model fits experimental transconductance curves and describes strategies for rational material design to improve OECT performance in sensing applications.

  13. Intrinsic Charge Transport in Organic Field-Effect Transistors

    Podzorov, Vitaly

    2005-03-01

    Organic field-effect transistors (OFETs) are essential components of modern electronics. Despite the rapid progress of organic electronics, understanding of fundamental aspects of the charge transport in organic devices is still lacking. Recently, the OFETs based on highly ordered organic crystals have been fabricated with innovative techniques that preserve the high quality of single-crystal organic surfaces. This technological progress facilitated the study of transport mechanisms in organic semiconductors [1-4]. It has been demonstrated that the intrinsic polaronic transport, not dominated by disorder, with a remarkably high mobility of ``holes'' μ = 20 cm^2/Vs can be achieved in these devices at room temperature [4]. The signatures of the intrinsic polaronic transport are the anisotropy of the carrier mobility and an increase of μ with cooling. These and other aspects of the charge transport in organic single-crystal FETs will be discussed. Co-authors are Etienne Menard, University of Illinois at Urbana Champaign; Valery Kiryukhin, Rutgers University; John Rogers, University of Illinois at Urbana Champaign; Michael Gershenson, Rutgers University. [1] V. Podzorov et al., Appl. Phys. Lett. 82, 1739 (2003); ibid. 83, 3504 (2003). [2] V. C. Sundar et al., Science 303, 1644 (2004). [3] R. W. I. de Boer et al., Phys. Stat. Sol. (a) 201, 1302 (2004). [4] V. Podzorov et al., Phys. Rev. Lett. 93, 086602 (2004).

  14. Molecular Design of Semiconducting Polymers for High-Performance Organic Electrochemical Transistors

    Nielsen, Christian B.; Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Bandiello, Enrico; Niazi, Muhammad Rizwan; Hanifi, David A.; Sessolo, Michele; Amassian, Aram; Malliaras, George G.; Rivnay, Jonathan; McCulloch, Iain

    2016-01-01

    required for accumulation mode OECT operation. We discuss key aspects relating to OECT performance such as ion and hole transport, elec-trochromic properties, operational voltage and stability. The demonstration of our molecular design strategy

  15. Fabricating an organic complementary inverter by integrating two transistors on a single substrate

    Wang Jun; Wei Bin; Zhang Jianhua

    2008-01-01

    Organic complementary inverters were fabricated by integrating two transistors of different electric type on a single substrate. One is a p-type organic heterojunction transistor with a depletion–accumulation mode that acts as a load element. The other is an n-type transistor with an accumulation mode that acts as a drive element. Typical inverter characteristics with a voltage gain of 12 were obtained. Compared with conventional devices, our organic complementary inverter used only one-step patterning of an organic semiconductor, and simultaneously suppressed the leakage current between supply voltage and ground. Therefore, current studies provide a simpler path to fabrication of organic complementary circuits

  16. High-performance thin-film-transistors based on semiconducting-enriched single-walled carbon nanotubes processed by electrical-breakdown strategy

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1" è" r" e Avenue, Val d’Or, Québec J9P 1Y3 (Canada); Habib, M.A. [Computer Sciences and Engineering Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Abdul-Hafidh, E.H. [High Energy Physics Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Rosei, F. [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2015-02-15

    Highlights: • We selectively burn metallic single wall carbon nanotubes (SWCNT) by electrical breakdown. • We successfully achieve a semiconducting enriched-SWCNT in TFT configuration. • High performance, like On/Off of 10{sup 5} and a subthreshold swing of 165 mV/decades were obtained. • After PMMA coating, the SWCNT–TFTs were found stables for more than 4 months. - Abstract: Over the past two decades, among remarkable variety of nanomaterials, single-walled carbon nanotubes (SWCNTs) remain the most intriguing and uniquely well suited materials for applications in high-performance electronics. The most advanced technologies require the ability to form purely semiconducting SWCNTs. Here, we report on our strategy based on the well known progressive electrical breakdown process that offer this capability and serves as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous random networks, deposited on silicon substrates in a thin film transistor (TFT) configuration. We demonstrate the successful achievement of semiconducting enriched-SWCNT networks in TFT scheme that reach On/Off switching ratios of ∼100,000, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades. The obtained TFT devices were then protected with thin film poly(methyl methacrylate) (PMMA) to keep the percolation level of the SWCNTs network spatially and temporally stable, while protecting it from atmosphere exchanges. TFT devices were found to be air-stable and maintained their excellent characteristics in ambient atmosphere for more than 4 months. This approach could work as a platform for future nanotube-based nanoelectronics.

  17. Modeling of bias-induced changes of organic field-effect transistor characteristics

    Sharma, A.

    2011-01-01

    Organic semiconductors offer exciting possibilities in developing new types of solar cells, photodetectors, light emitting diodes and field-effect transistors. Important advantages of organic semiconducting materials over their inorganic counterparts are their chemical tunability, their low weight,

  18. N-type organic electrochemical transistors with stability in water

    Giovannitti, Alexander

    2016-10-07

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

  19. N-type organic electrochemical transistors with stability in water

    Giovannitti, Alexander; Nielsen, Christian B.; Sbircea, Dan-Tiberiu; Inal, Sahika; Donahue, Mary; Niazi, Muhammad Rizwan; Hanifi, David A.; Amassian, Aram; Malliaras, George G.; Rivnay, Jonathan; McCulloch, Iain

    2016-01-01

    Organic electrochemical transistors (OECTs) are receiving significant attention due to their ability to efficiently transduce biological signals. A major limitation of this technology is that only p-type materials have been reported, which precludes the development of complementary circuits, and limits sensor technologies. Here, we report the first ever n-type OECT, with relatively balanced ambipolar charge transport characteristics based on a polymer that supports both hole and electron transport along its backbone when doped through an aqueous electrolyte and in the presence of oxygen. This new semiconducting polymer is designed specifically to facilitate ion transport and promote electrochemical doping. Stability measurements in water show no degradation when tested for 2 h under continuous cycling. This demonstration opens the possibility to develop complementary circuits based on OECTs and to improve the sophistication of bioelectronic devices.

  20. Enhanced chemical sensing organic thin-film transistors

    Tanese, M. C.; Torsi, L.; Farinola, G. M.; Valli, L.; Hassan Omar, O.; Giancane, G.; Ieva, E.; Babudri, F.; Palmisano, F.; Naso, F.; Zambonin, P. G.

    2007-09-01

    Organic thin film transistor (OTFT) sensors are capable of fast, sensitive and reliable detection of a variety of analytes. They have been successfully tested towards many chemical and biological "odor" molecules showing high selectivity, and displaying the additional advantage of being compatible with plastic technologies. Their versatility is based on the possibility to control the device properties, from molecular design up to device architecture. Here phenylene-thiophene based organic semiconductors functionalized with ad hoc chosen side groups are used as active layers in sensing OTFTs. These materials, indeed, combine the detection capability of organic molecules (particularly in the case of bio-substituted systems) with the electronic properties of the conjugated backbone. A new OTFT structure including Langmuir-Schäfer layer by layer organic thin films is here proposed to perform chemical detection of organic vapors, including vapor phase chiral molecules such as citronellol vapors, with a detection limit in the ppm range. Thermally evaporated α6T based OTFT sensors are used as well to be employed as standard system in order to compare sensors performances.

  1. The Role of Performance Management in Creating and Maintaining a High-Performance Organization

    André A. de Waal

    2015-04-01

    Full Text Available There is still a good deal of confusion in the literature about how the use of a performance management system affects overall organizational performance. Some researchers find that performance management enhances both the financial and non-financial results of an organization, while others do not find any positive effects or, at most, ambiguous effects. An important step toward getting more clarity in this relationship is to investigate the role performance management plays in creating and maintaining a high-performance organization (HPO. The purpose of this study is to integrate performance management analysis (PMA and high-performance organization (HPO. A questionnaire combining questions on PMA dimensions and HPO factors was administered to two European-based multinational firms. Based on 468 valid questionnaires, a correlation analysis was performed on the PMA dimensions and the HPO factors in order to test the impact of performance management on the factors of high organizational performance. The results show strong and significant correlations between all the PMA dimensions and all the HPO factors, indicating that a performance management system that fosters performance-driven behavior in the organization is of critical importance to strengthen overall financial and non-financial performance.

  2. p-i-n Homojunction in Organic Light-Emitting Transistors

    Bisri, Satria Zulkarnaen; Takenobu, Taishi; Sawabe, Kosuke; Tsuda, Satoshi; Yomogidao, Yohei; Yamao, Takeshi; Hotta, Shu; Adachi, Chihaya; Iwasa, Yoshihiro

    2011-01-01

    A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETS) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously

  3. Proton migration mechanism for the instability of organic field-effect transistors

    Sharma, A.; Mathijssen, S.G.J.; Kemerink, M.; Leeuw, de D.M.; Bobbert, P.A.

    2009-01-01

    During prolonged application of a gate bias, organic field-effect transistors show an instability involving a gradual shift of the threshold voltage toward the applied gate bias voltage. We propose a model for this instability in p-type transistors with a silicon-dioxide gate dielectric, based on

  4. Printed organic thin-film transistor-based integrated circuits

    Mandal, Saumen; Noh, Yong-Young

    2015-01-01

    Organic electronics is moving ahead on its journey towards reality. However, this technology will only be possible when it is able to meet specific criteria including flexibility, transparency, disposability and low cost. Printing is one of the conventional techniques to deposit thin films from solution-based ink. It is used worldwide for visual modes of information, and it is now poised to enter into the manufacturing processes of various consumer electronics. The continuous progress made in the field of functional organic semiconductors has achieved high solubility in common solvents as well as high charge carrier mobility, which offers ample opportunity for organic-based printed integrated circuits. In this paper, we present a comprehensive review of all-printed organic thin-film transistor-based integrated circuits, mainly ring oscillators. First, the necessity of all-printed organic integrated circuits is discussed; we consider how the gap between printed electronics and real applications can be bridged. Next, various materials for printed organic integrated circuits are discussed. The features of these circuits and their suitability for electronics using different printing and coating techniques follow. Interconnection technology is equally important to make this product industrially viable; much attention in this review is placed here. For high-frequency operation, channel length should be sufficiently small; this could be achievable with a combination of surface treatment-assisted printing or laser writing. Registration is also an important issue related to printing; the printed gate should be perfectly aligned with the source and drain to minimize parasitic capacitances. All-printed organic inverters and ring oscillators are discussed here, along with their importance. Finally, future applications of all-printed organic integrated circuits are highlighted. (paper)

  5. WHAT MEANS HIGH PERFORMANCE WORK PRACTICES FOR HUMAN RESOURCES IN AN ORGANIZATION?

    ANCA-IOANA MUNTEANU

    2014-10-01

    Full Text Available This paper focused on an overview of the different approaches in the literature to the concept of high performance work practices (HPWP, showing how this term evolves over time. Analyzing the literature, the significance of this term are seen as an evolved with customer requirements. Organizations need employees easily adaptable, able to meet customer needs in a timely manner. Therefore, organizations must on the one hand to satisfy their customers, on the other hand, employees, those in which firms can achieve their goals. Currently have placed particular emphasis on employee motivation, training, their involvement in decision making, delegation of authority, remuneration based on performance, rewarding loyalty. All above are considered HPWP and the AMO model is representative of these. The implementation of HPWP is a current problem for organizations wishing to achieve a sustainable competitive advantage. In this sense, this article may provide information of interest to business.

  6. Control of Ambipolar Transport in SnO Thin-Film Transistors by Back-Channel Surface Passivation for High Performance Complementary-like Inverters.

    Luo, Hao; Liang, Lingyan; Cao, Hongtao; Dai, Mingzhi; Lu, Yicheng; Wang, Mei

    2015-08-12

    For ultrathin semiconductor channels, the surface and interface nature are vital and often dominate the bulk properties to govern the field-effect behaviors. High-performance thin-film transistors (TFTs) rely on the well-defined interface between the channel and gate dielectric, featuring negligible charge trap states and high-speed carrier transport with minimum carrier scattering characters. The passivation process on the back-channel surface of the bottom-gate TFTs is indispensable for suppressing the surface states and blocking the interactions between the semiconductor channel and the surrounding atmosphere. We report a dielectric layer for passivation of the back-channel surface of 20 nm thick tin monoxide (SnO) TFTs to achieve ambipolar operation and complementary metal oxide semiconductor (CMOS) like logic devices. This chemical passivation reduces the subgap states of the ultrathin channel, which offers an opportunity to facilitate the Fermi level shifting upward upon changing the polarity of the gate voltage. With the advent of n-type inversion along with the pristine p-type conduction, it is now possible to realize ambipolar operation using only one channel layer. The CMOS-like logic inverters based on ambipolar SnO TFTs were also demonstrated. Large inverter voltage gains (>100) in combination with wide noise margins are achieved due to high and balanced electron and hole mobilities. The passivation also improves the long-term stability of the devices. The ability to simultaneously achieve field-effect inversion, electrical stability, and logic function in those devices can open up possibilities for the conventional back-channel surface passivation in the CMOS-like electronics.

  7. A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

    Salazar, Ramon B.; Appenzeller, Joerg; Ilatikhameneh, Hesameddin; Rahman, Rajib; Klimeck, Gerhard

    2015-01-01

    A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: (1) the potential profile from source to channel and (2) the elliptic curvature of the complex bands in the bandgap region. It is proposed to use 1D Poisson's equations in the source and the channel to describe the potential profile in homojunction TFETs. This allows to quantify the impact of source/drain doping on device performance, an aspect usually ignored in TFET modeling but highly relevant in ultra-scaled devices. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a 3D full band atomistic approach based on non-equilibrium Green's functions. It is shown that the model reproduces with good accuracy the data obtained from the simulations in all regions of operation: the on/off states and the n/p branches of conduction. This approach allows calculation of energy-dependent band-to-band tunneling currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the approach provide a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size-, and/or geometry-dependent) impact the TFET performance under any bias conditions. The proposed model presents thus a practical complement to computationally expensive simulations such as the 3D NEGF approach

  8. Fabrication and simulation of organic transistors and functional circuits

    Taylor, D. Martin, E-mail: d.m.taylor@bangor.ac.uk [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom); Patchett, Eifion R.; Williams, Aled [School of Electronic Engineering, Bangor University, Dean Street, Bangor, Gwynedd LL57 1UT (United Kingdom); Ding, Ziqian; Assender, Hazel E. [Department of Materials, Oxford University, Parks Road, Oxford OX1 3PH (United Kingdom); Morrison, John J.; Yeates, Stephen G. [School of Chemistry, University of Manchester, Oxford Road, Manchester M13 9PL (United Kingdom)

    2015-07-29

    Highlights: • Development of roll-to-roll fabrication protocol for organic TFTs and circuits. • Bottom-gate polystyrene/DNTT TFTs much better than top-gate TFTs. • High-yield and high mobility with polystyrene-buffered TPGDA. • Fabrication of functional circuits – ring oscillators and logic gates. • New baseline process allows TFT parameter extraction and circuit simulation. - Abstract: We report the development of a vacuum-evaporation route for the roll-to-roll fabrication of functioning organic circuits. A number of key findings and observations are highlighted which influenced the eventual fabrication protocol adopted. Initially, the role of interface roughness in determining carrier mobility in thin film transistors (TFTs) is investigated. Then it is shown that TFT yield is higher for devices fabricated on a flash-evaporated-plasma-polymerised tri(propyleneglycol) diacrylate (TPGDA) gate dielectric than for TFTs based on a spin-coated polystyrene (PS) dielectric. However, a degradation in mobility is observed which is attributed to the highly polar TPGDA surface. It is shown that high mobility, low gate-leakage currents and excellent stability are restored when the surface of TPGDA was buffered with a thin, spin-coated PS film. The resulting baseline process allowed arrays of functional circuits such as ring oscillators, NOR/NAND logic gates and S–R latches to be fabricated with high yield and their performance to be simulated.

  9. Innovative architecture design for high performance organic and hybrid multi-junction solar cells

    Li, Ning; Spyropoulos, George D.; Brabec, Christoph J.

    2017-08-01

    The multi-junction concept is especially attractive for the photovoltaic (PV) research community owing to its potential to overcome the Schockley-Queisser limit of single-junction solar cells. Tremendous research interests are now focused on the development of high-performance absorbers and novel device architectures for emerging PV technologies, such as organic and perovskite PVs. It has been predicted that the multi-junction concept is able to boost the organic and perovskite PV technologies approaching the 20% and 30% benchmarks, respectively, showing a bright future of commercialization of the emerging PV technologies. In this contribution, we will demonstrate innovative architecture design for solution-processed, highly functional organic and hybrid multi-junction solar cells. A simple but elegant approach to fabricating organic and hybrid multi-junction solar cells will be introduced. By laminating single organic/hybrid solar cells together through an intermediate layer, the manufacturing cost and complexity of large-scale multi-junction solar cells can be significantly reduced. This smart approach to balancing the photocurrents as well as open circuit voltages in multi-junction solar cells will be demonstrated and discussed in detail.

  10. Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer

    Pan Feng; Qian Xian-Rui; Huang Li-Zhen; Wang Hai-Bo; Yan Dong-Hang

    2011-01-01

    High-mobility vanadyl phthalocyanine (VOPc)/5,5‴-bis(4-fluorophenyl)-2,2':5',2″:5″,2‴-quaterthiophene (F2-P4T) thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine (F 16 CuPc)/copper phthalocyanine (CuPc) heterojunction unit, which are fabricated at different substrate temperatures, as a buffer layer. The highest mobility of 4.08cm 2 /Vs is achieved using a F 16 CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature. Compared with the random small grain-like morphology of the room-temperature buffer layer, the high-temperature organic heterojunction presents a large-sized fiber-like film morphology, resulting in an enhanced conductivity. Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained. (cross-disciplinary physics and related areas of science and technology)

  11. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    Kanimozhi, Catherine K.; Yaacobi-Gross, Nir; Chou, Kang Wei; Amassian, Aram; Anthopoulos, Thomas D.; Patil, Satish P.

    2012-01-01

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a

  12. Flexible low-voltage organic transistors with high thermal stability at 250 °C.

    Yokota, Tomoyuki; Kuribara, Kazunori; Tokuhara, Takeyoshi; Zschieschang, Ute; Klauk, Hagen; Takimiya, Kazuo; Sadamitsu, Yuji; Hamada, Masahiro; Sekitani, Tsuyoshi; Someya, Takao

    2013-07-19

    Low-operating-voltage flexible organic thin-film transistors with high thermal stability using DPh-DNTT and SAM gate dielectrics are reported. The mobility of the transistors are decreased by 23% after heating to 250 °C for 30 min. Furthermore, flexible organic pseudo-CMOS inverter circuits, which are functional after heating to 200 °C, are demonstrated. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Volatile Organic Compounds (VOCs in Conventional and High Performance School Buildings in the U.S.

    Lexuan Zhong

    2017-01-01

    Full Text Available Exposure to volatile organic compounds (VOCs has been an indoor environmental quality (IEQ concern in schools and other buildings for many years. Newer designs, construction practices and building materials for “green” buildings and the use of “environmentally friendly” products have the promise of lowering chemical exposure. This study examines VOCs and IEQ parameters in 144 classrooms in 37 conventional and high performance elementary schools in the U.S. with the objectives of providing a comprehensive analysis and updating the literature. Tested schools were built or renovated in the past 15 years, and included comparable numbers of conventional, Energy Star, and Leadership in Energy and Environmental Design (LEED-certified buildings. Indoor and outdoor VOC samples were collected and analyzed by thermal desorption, gas chromatography and mass spectroscopy for 94 compounds. Aromatics, alkanes and terpenes were the major compound groups detected. Most VOCs had mean concentrations below 5 µg/m3, and most indoor/outdoor concentration ratios ranged from one to 10. For 16 VOCs, the within-school variance of concentrations exceeded that between schools and, overall, no major differences in VOC concentrations were found between conventional and high performance buildings. While VOC concentrations have declined from levels measured in earlier decades, opportunities remain to improve indoor air quality (IAQ by limiting emissions from building-related sources and by increasing ventilation rates.

  14. Volatile Organic Compounds (VOCs) in Conventional and High Performance School Buildings in the U.S.

    Zhong, Lexuan; Su, Feng-Chiao; Batterman, Stuart

    2017-01-21

    Exposure to volatile organic compounds (VOCs) has been an indoor environmental quality (IEQ) concern in schools and other buildings for many years. Newer designs, construction practices and building materials for "green" buildings and the use of "environmentally friendly" products have the promise of lowering chemical exposure. This study examines VOCs and IEQ parameters in 144 classrooms in 37 conventional and high performance elementary schools in the U.S. with the objectives of providing a comprehensive analysis and updating the literature. Tested schools were built or renovated in the past 15 years, and included comparable numbers of conventional, Energy Star, and Leadership in Energy and Environmental Design (LEED)-certified buildings. Indoor and outdoor VOC samples were collected and analyzed by thermal desorption, gas chromatography and mass spectroscopy for 94 compounds. Aromatics, alkanes and terpenes were the major compound groups detected. Most VOCs had mean concentrations below 5 µg/m³, and most indoor/outdoor concentration ratios ranged from one to 10. For 16 VOCs, the within-school variance of concentrations exceeded that between schools and, overall, no major differences in VOC concentrations were found between conventional and high performance buildings. While VOC concentrations have declined from levels measured in earlier decades, opportunities remain to improve indoor air quality (IAQ) by limiting emissions from building-related sources and by increasing ventilation rates.

  15. Towards High Performance Organic Photovoltaic Cells: A Review of Recent Development in Organic Photovoltaics

    Junsheng Yu

    2014-09-01

    Full Text Available Organic photovoltaic cells (OPVs have been a hot topic for research during the last decade due to their promising application in relieving energy pressure and environmental problems caused by the increasing combustion of fossil fuels. Much effort has been made toward understanding the photovoltaic mechanism, including evolving chemical structural motifs and designing device structures, leading to a remarkable enhancement of the power conversion efficiency of OPVs from 3% to over 15%. In this brief review, the advanced progress and the state-of-the-art performance of OPVs in very recent years are summarized. Based on several of the latest developed approaches to accurately detect the separation of electron-hole pairs in the femtosecond regime, the theoretical interpretation to exploit the comprehensive mechanistic picture of energy harvesting and charge carrier generation are discussed, especially for OPVs with bulk and multiple heterojunctions. Subsequently, the novel structural designs of the device architecture of OPVs embracing external geometry modification and intrinsic structure decoration are presented. Additionally, some approaches to further increase the efficiency of OPVs are described, including thermotics and dynamics modification methods. Finally, this review highlights the challenges and prospects with the aim of providing a better understanding towards highly efficient OPVs.

  16. Liquid crystals for organic thin-film transistors

    Iino, Hiroaki; Usui, Takayuki; Hanna, Jun-Ichi

    2015-04-01

    Crystalline thin films of organic semiconductors are a good candidate for field effect transistor (FET) materials in printed electronics. However, there are currently two main problems, which are associated with inhomogeneity and poor thermal durability of these films. Here we report that liquid crystalline materials exhibiting a highly ordered liquid crystal phase of smectic E (SmE) can solve both these problems. We design a SmE liquid crystalline material, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10), for FETs and synthesize it. This material provides uniform and molecularly flat polycrystalline thin films reproducibly when SmE precursor thin films are crystallized, and also exhibits high durability of films up to 200 °C. In addition, the mobility of FETs is dramatically enhanced by about one order of magnitude (over 10 cm2 V-1 s-1) after thermal annealing at 120 °C in bottom-gate-bottom-contact FETs. We anticipate the use of SmE liquid crystals in solution-processed FETs may help overcome upcoming difficulties with novel technologies for printed electronics.

  17. Organic electrochemical transistors for cell-based impedance sensing

    Rivnay, Jonathan; Ramuz, Marc; Hama, Adel; Huerta, Miriam; Owens, Roisin M.; Leleux, Pierre

    2015-01-01

    Electrical impedance sensing of biological systems, especially cultured epithelial cell layers, is now a common technique to monitor cell motion, morphology, and cell layer/tissue integrity for high throughput toxicology screening. Existing methods to measure electrical impedance most often rely on a two electrode configuration, where low frequency signals are challenging to obtain for small devices and for tissues with high resistance, due to low current. Organic electrochemical transistors (OECTs) are conducting polymer-based devices, which have been shown to efficiently transduce and amplify low-level ionic fluxes in biological systems into electronic output signals. In this work, we combine OECT-based drain current measurements with simultaneous measurement of more traditional impedance sensing using the gate current to produce complex impedance traces, which show low error at both low and high frequencies. We apply this technique in vitro to a model epithelial tissue layer and show that the data can be fit to an equivalent circuit model yielding trans-epithelial resistance and cell layer capacitance values in agreement with literature. Importantly, the combined measurement allows for low biases across the cell layer, while still maintaining good broadband signal

  18. Research Update: Electrical monitoring of cysts using organic electrochemical transistors

    Huerta, M.; Rivnay, J.; Ramuz, M.; Hama, A.; Owens, R. M.

    2015-01-01

    Organotypic three-dimensional (3D) cell culture models have the potential to act as surrogate tissues in vitro, both for basic research and for drug discovery/toxicology. 3D cultures maintain not only 3D architecture but also cell-cell and cell extracellular matrix interactions, particularly when grown in cysts or spheroids. Characterization of cell cultures grown in 3D formats, however, provides a significant challenge for cell biologists due to the incompatibility of these structures with commonly found optical or electronic monitoring systems. Electronic impedance spectroscopy is a cell culture monitoring technique with great potential; however, it has not been possible to integrate 3D cultures with commercially available systems to date. Cyst-like 3D cultures are particularly challenging due to their small size and difficulty in manipulation. Herein, we demonstrate isolation of cyst-like 3D cultures by capillarity and subsequent integration with the organic electrochemical transistor for monitoring the integrity of these structures. We show not only that this versatile device can be adapted to the cyst format for measuring resistance and, therefore, the quality of the cysts, but also can be used for quantitative monitoring of the effect of toxic compounds on cells in a 3D format. The ability to quantitatively predict effects of drugs on 3D cultures in vitro has large future potential for the fields of drug discovery and toxicology

  19. Rapid and Accurate Machine Learning Recognition of High Performing Metal Organic Frameworks for CO2 Capture.

    Fernandez, Michael; Boyd, Peter G; Daff, Thomas D; Aghaji, Mohammad Zein; Woo, Tom K

    2014-09-04

    In this work, we have developed quantitative structure-property relationship (QSPR) models using advanced machine learning algorithms that can rapidly and accurately recognize high-performing metal organic framework (MOF) materials for CO2 capture. More specifically, QSPR classifiers have been developed that can, in a fraction of a section, identify candidate MOFs with enhanced CO2 adsorption capacity (>1 mmol/g at 0.15 bar and >4 mmol/g at 1 bar). The models were tested on a large set of 292 050 MOFs that were not part of the training set. The QSPR classifier could recover 945 of the top 1000 MOFs in the test set while flagging only 10% of the whole library for compute intensive screening. Thus, using the machine learning classifiers as part of a high-throughput screening protocol would result in an order of magnitude reduction in compute time and allow intractably large structure libraries and search spaces to be screened.

  20. Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride.

    He, Daowei; Qiao, Jingsi; Zhang, Linglong; Wang, Junya; Lan, Tu; Qian, Jun; Li, Yun; Shi, Yi; Chai, Yang; Lan, Wei; Ono, Luis K; Qi, Yabing; Xu, Jian-Bin; Ji, Wei; Wang, Xinran

    2017-09-01

    Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzothieno[3,2- b ][1]benzothiophene (C 8 -BTBT) molecules as an OTFT channel, we demonstrate remarkable electrical characteristics, including intrinsic hole mobility over 30 cm 2 /Vs, Ohmic contact with 100 Ω · cm resistance, and band-like transport down to 150 K. Compared to conventional OTFTs, the main advantage of a monolayer channel is the direct, nondisruptive contact between the charge transport layer and metal leads, a feature that is vital for achieving low contact resistance and current saturation voltage. On the other hand, bilayer and thicker C 8 -BTBT OTFTs exhibit strong Schottky contact and much higher contact resistance but can be improved by inserting a doped graphene buffer layer. Our results suggest that highly crystalline molecular monolayers are promising form factors to build high-performance OTFTs and investigate device physics. They also allow us to precisely model how the molecular packing changes the transport and contact properties.

  1. Light Scattering Studies of Organic Field Effect Transistors

    Adil, Danish

    Organic semiconductors hold a great promise of enabling new technology based on low cost and flexible electronic devices. While much work has been done in the field of organic semiconductors, the field is still quite immature when compared to that of traditional inorganic based devices. More work is required before the full potential of organic field effect transistors (OFETs), organic light emitting diodes (OLEDs), and organic photovoltaics (OPVs) is realized. Among such work, a further development of diagnostic tools that characterize charge transport and device robustness more efficiently is required. Charge transport in organic semiconductors is limited by the nature of the metal-semiconductor interfaces where charge is injected into the semiconductor film and the semiconductor-dielectric interface where the charge is accumulated and transported. This, combined with that fact that organic semiconductors are especially susceptible to having structural defects induced via oxidation, charge transport induced damage, and metallization results in a situation where a semiconductor film's ability to conduct charge can degrade over time. This degradation manifests itself in the electrical device characteristics of organic based electronic devices. OFETs, for example, may display changes in threshold voltage, lowering of charge carrier mobilities, or a decrease in the On/Off ratio. All these effects sum together to result in degradation in device performance. The work begins with a study where matrix assisted pulsed laser deposition (MAPLE), an alternative organic semiconductor thin film deposition method, is used to fabricate OFETs with improved semiconductor-dielectric interfaces. MAPLE allows for the controlled layer-by-layer growth of the semiconductor film. Devices fabricated using this technique are shown to exhibit desirable characteristics that are otherwise only achievable with additional surface treatments. MAPLE is shown to be viable alternative to other

  2. Materials Design via Optimized Intramolecular Noncovalent Interactions for High-Performance Organic Semiconductors

    Guo, Xiaojie; Liao, Qiaogan; Manley, Eric F.; Wu, Zishan; Wang, Yulun; Wang, Weida; Yang, Tingbin; Shin, Young-Eun; Cheng, Xing; Liang, Yongye; Chen, Lin X.; Baeg, Kang-Jun; Marks, Tobin J.; Guo, Xugang

    2016-03-15

    We report the design, synthesis, and implemention in semiconducting polymers of a novel head-to-head linkage containing the TRTOR (3-alkyl-3'-alkoxy-2,2'-bithiophene) donor subunit having a single strategically optimized, planarizing noncovalent S···O interaction. Diverse complementary thermal, optical, electrochemical, X-ray scattering, electrical, photovoltaic, and electron microscopic characterization techniques are applied to establish structure-property correlations in a TRTOR-based polymer series. In comparison to monomers having double S···O interactions, replacing one alkoxy substituent with a less electron-donating alkyl one yields TRTOR-based polymers with significantly depressed (0.2-0.3 eV) HOMOs. Furthermore, the weaker single S···O interaction and greater TRTOR steric encumberance enhances materials processability without sacrificing backbone planarity. From another perspective, TRTOR has comparable electronic properties to ring-fused 5Hdithieno[ 3,2-b:2',3'-d]pyran (DTP) subunits, but a centrosymmetric geometry which promotes a more compact and ordered structure than bulkier, axisymmetric DTP. Compared to monosubstituted TTOR (3-alkoxy-2,2'-bithiophene), alkylation at the TRTOR bithiophene 3-position enhances conjugation and polymer crystallinity with contracted π-π stacking. Grazing incidence wide-angle X-ray scattering (GIWAXS) data reveal that the greater steric hindrance and the weaker single S···O interaction are not detrimental to close packing and high crystallinity. As a proof of materials design, copolymerizing TRTOR with phthalimides yields copolymers with promising thin-film transistor mobility as high as 0.42 cm2/(V·s) and 6.3% power conversion efficiency in polymer solar cells, the highest of any phthalimide copolymers reported to date. The depressed TRTOR HOMOs imbue these polymers with substantially increased Ion/Ioff ratios and Voc’s versus analogous subunits with multiple electron donating

  3. Materials Design via Optimized Intramolecular Noncovalent Interactions for High-Performance Organic Semiconductors

    Guo, Xiaojie [Shenzhen Key Laboratory; Liao, Qiaogan [Shenzhen Key Laboratory; Manley, Eric F. [Department; Chemical; Wu, Zishan [Shenzhen Key Laboratory; Wang, Yulun [Shenzhen Key Laboratory; Wang, Weida [Shenzhen Key Laboratory; Yang, Tingbin [Shenzhen Key Laboratory; Shin, Young-Eun [Department; Cheng, Xing [Shenzhen Key Laboratory; Liang, Yongye [Shenzhen Key Laboratory; Chen, Lin X. [Department; Chemical; Baeg, Kang-Jun [Department; Marks, Tobin J. [Department; Guo, Xugang [Shenzhen Key Laboratory

    2016-03-15

    We report the design, synthesis, and implemention in semiconducting polymers of a novel head-to-head linkage containing the TRTOR (3-alkyl-3'-alkoxy-2,2'-bithiophene) donor subunit having a single strategically optimized, planarizing noncovalent S···O interaction. Diverse complementary thermal, optical, electrochemical, X-ray scattering, electrical, photovoltaic, and electron microscopic characterization techniques are applied to establish structure–property correlations in a TRTOR-based polymer series. In comparison to monomers having double S···O interactions, replacing one alkoxy substituent with a less electron-donating alkyl one yields TRTOR-based polymers with significantly depressed (0.2–0.3 eV) HOMOs. Furthermore, the weaker single S···O interaction and greater TRTOR steric encumberance enhances materials processability without sacrificing backbone planarity. From another perspective, TRTOR has comparable electronic properties to ring-fused 5H-dithieno[3,2-b:2',3'-d]pyran (DTP) subunits, but a centrosymmetric geometry which promotes a more compact and ordered structure than bulkier, axisymmetric DTP. Compared to monosubstituted TTOR (3-alkoxy-2,2'-bithiophene), alkylation at the TRTOR bithiophene 3-position enhances conjugation and polymer crystallinity with contracted π–π stacking. Grazing incidence wide-angle X-ray scattering (GIWAXS) data reveal that the greater steric hindrance and the weaker single S···O interaction are not detrimental to close packing and high crystallinity. As a proof of materials design, copolymerizing TRTOR with phthalimides yields copolymers with promising thin-film transistor mobility as high as 0.42 cm2/(V·s) and 6.3% power conversion efficiency in polymer solar cells, the highest of any phthalimide copolymers reported to date. The depressed TRTOR HOMOs imbue these polymers with substantially increased Ion/Ioff ratios and Voc’s versus analogous subunits with multiple electron

  4. Development of organic-inorganic double hole-transporting material for high performance perovskite solar cells

    Jo, Jea Woong; Seo, Myung-Seok; Jung, Jae Woong; Park, Joon-Suh; Sohn, Byeong-Hyeok; Ko, Min Jae; Son, Hae Jung

    2018-02-01

    The control of the optoelectronic properties of the interlayers of perovskite solar cells (PSCs) is crucial for achieving high photovoltaic performances. Of the solution-processable interlayer candidates, NiOx is considered one of the best inorganic hole-transporting layer (HTL) materials. However, the power conversion efficiencies (PCEs) of NiOx-based PSCs are limited by the unfavorable contact between perovskite layers and NiOx HTLs, the high density of surface trap sites, and the inefficient charge extraction from perovskite photoactive layers to anodes. Here, we introduce a new organic-inorganic double HTL consisting of a Cu:NiOx thin film passivated by a conjugated polyelectrolyte (PhNa-1T) film. This double HTL has a significantly lower pinhole density and forms better contact with perovskite films, which results in enhanced charge extraction. As a result, the PCEs of PSCs fabricated with the double HTL are impressively improved up to 17.0%, which is more than 25% higher than that of the corresponding PSC with a Cu:NiOx HTL. Moreover, PSCs with the double HTLs exhibit similar stabilities under ambient conditions to devices using inorganic Cu:NiOx. Therefore, this organic-inorganic double HTL is a promising interlayer material for high performance PSCs with high air stability.

  5. Temperature Dependence of Field-Effect Mobility in Organic Thin-Film Transistors: Similarity to Inorganic Transistors.

    Okada, Jun; Nagase, Takashi; Kobayashi, Takashi; Naito, Hiroyoshi

    2016-04-01

    Carrier transport in solution-processed organic thin-film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8-BTBT) has been investigated in a wide temperature range from 296 to 10 K. The field-effect mobility shows thermally activated behavior whose activation energy becomes smaller with decreasing temperature. The temperature dependence of field-effect mobility found in C8-BTBT is similar to that of others materials: organic semiconducting polymers, amorphous oxide semiconductors and hydrogenated amorphous silicon. These results indicate that hopping transport between isoenergetic localized states becomes dominated in a low temperature regime in these materials.

  6. Progress of pyrene-based organic semiconductor in organic field effect transistors

    Yanbin; Gong; Xuejun; Zhan; Qianqian; Li; Zhen; Li

    2016-01-01

    Thanks to the pure blue emitting, high planarity, electron rich and ease of chemical modification, pyrene has been thoroughly investigated for applications in organic electronics such as organic light emitting diodes(OLEDs), organic field effect transistors(OFETs), and organic solar cells(OSCs). Especially, great progresses have been made of pyrene-based organic semiconductors for OFETs in past decades. Due to the difference of molecular structure, pyrene-based organic semiconductors are divided into three categories, pyrene as terminal group, pyrene as center core and fused pyrene derivatives. This minireview gives a brief introduction of the structure-property relationship and application in OFETs about most of pyrene-based semiconducting materials since 2006,illustrating that pyrene is a good building block to construct semiconductors with superior transport property for OFETs. Finally, we provide a summary concerning the methodology to improve the transport property of the pyrene-based semiconducting materials as well as an outlook.

  7. Solution-Processed Wide-Bandgap Organic Semiconductor Nanostructures Arrays for Nonvolatile Organic Field-Effect Transistor Memory.

    Li, Wen; Guo, Fengning; Ling, Haifeng; Liu, Hui; Yi, Mingdong; Zhang, Peng; Wang, Wenjun; Xie, Linghai; Huang, Wei

    2018-01-01

    In this paper, the development of organic field-effect transistor (OFET) memory device based on isolated and ordered nanostructures (NSs) arrays of wide-bandgap (WBG) small-molecule organic semiconductor material [2-(9-(4-(octyloxy)phenyl)-9H-fluoren-2-yl)thiophene]3 (WG 3 ) is reported. The WG 3 NSs are prepared from phase separation by spin-coating blend solutions of WG 3 /trimethylolpropane (TMP), and then introduced as charge storage elements for nonvolatile OFET memory devices. Compared to the OFET memory device with smooth WG 3 film, the device based on WG 3 NSs arrays exhibits significant improvements in memory performance including larger memory window (≈45 V), faster switching speed (≈1 s), stable retention capability (>10 4 s), and reliable switching properties. A quantitative study of the WG 3 NSs morphology reveals that enhanced memory performance is attributed to the improved charge trapping/charge-exciton annihilation efficiency induced by increased contact area between the WG 3 NSs and pentacene layer. This versatile solution-processing approach to preparing WG 3 NSs arrays as charge trapping sites allows for fabrication of high-performance nonvolatile OFET memory devices, which could be applicable to a wide range of WBG organic semiconductor materials. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Detection beyond Debye's length with an electrolyte-gated organic field-effect transistor.

    Palazzo, Gerardo; De Tullio, Donato; Magliulo, Maria; Mallardi, Antonia; Intranuovo, Francesca; Mulla, Mohammad Yusuf; Favia, Pietro; Vikholm-Lundin, Inger; Torsi, Luisa

    2015-02-04

    Electrolyte-gated organic field-effect transistors are successfully used as biosensors to detect binding events occurring at distances from the transistor electronic channel that are much larger than the Debye length in highly concentrated solutions. The sensing mechanism is mainly capacitive and is due to the formation of Donnan's equilibria within the protein layer, leading to an extra capacitance (CDON) in series to the gating system. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Organic Electrochemical Transistors for the Detection of Cell Surface Glycans.

    Chen, Lizhen; Fu, Ying; Wang, Naixiang; Yang, Anneng; Li, Yuanzhe; Wu, Jie; Ju, Huangxian; Yan, Feng

    2018-05-23

    Cell surface glycans play critical roles in diverse biological processes, such as cell-cell communication, immunity, infection, development, and differentiation. Their expressions are closely related to cancer growth and metastasis. This work demonstrates an organic electrochemical transistor (OECT)-based biosensor for the detection of glycan expression on living cancer cells. Herein, mannose on human breast cancer cells (MCF-7) as the target glycan model, poly dimethyl diallyl ammonium chloride-multiwall carbon nanotubes (PDDA-MWCNTs) as the loading interface, concanavalin A (Con A) with active mannose binding sites, aptamer and horseradish peroxidase co-immobilized gold nanoparticles (HRP-aptamer-Au NPs) as specific nanoprobes are used to fabricate the OECT biosensor. In this strategy, PDDA-MWCNT interfaces can enhance the loading of Con A, and the target cells can be captured through Con A via active mannose binding sites. Thus, the expression of cell surface can be reflected by the amount of cells captured on the gate. Specific nanoprobes are introduced to the captured cells to produce an OECT signal because of the reduction of hydrogen peroxide catalyzed by HRP conjugated on Au nanoparticles, while the aptamer on nanoprobes can selectively recognize the MCF-7 cells. It is reasonable that more target cells are captured on the gate electrode, more HRP-nanoprobes are loaded thus a larger signal response. The device shows an obvious response to MCF-7 cells down to 10 cells/μL and can be used to selectively monitor the change of mannose expression on cell surfaces upon a treatment with the N-glycan inhibitor. The OECT-based biosensor is promising for the analysis of glycan expressions on the surfaces of different types of cells.

  10. Adamantane substitutions: a path to high-performing, soluble, versatile and sustainable organic semiconducting materials

    Kovalenko, A.; Yumusak, C.; Heinrichová, P.; Stříteský, S.; Fekete, Ladislav; Vala, M.; Weiter, M.; Sariciftci, N. S.; Krajčovič, J.

    2017-01-01

    Roč. 5, č. 19 (2017), s. 4716-4723 ISSN 2050-7526 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : field-effect transistors * side-chain * solar-cells * conjugated polymers * charge-transport * small molecules * photovoltaics * efficient * pigments Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 5.256, year: 2016

  11. Improved transfer of graphene for gated Schottky-junction, vertical, organic, field-effect transistors.

    Lemaitre, Maxime G; Donoghue, Evan P; McCarthy, Mitchell A; Liu, Bo; Tongay, Sefaattin; Gila, Brent; Kumar, Purushottam; Singh, Rajiv K; Appleton, Bill R; Rinzler, Andrew G

    2012-10-23

    An improved process for graphene transfer was used to demonstrate high performance graphene enabled vertical organic field effect transistors (G-VFETs). The process reduces disorder and eliminates the polymeric residue that typically plagues transferred films. The method also allows for purposely creating pores in the graphene of a controlled areal density. Transconductance observed in G-VFETs fabricated with a continuous (pore-free) graphene source electrode is attributed to modulation of the contact barrier height between the graphene and organic semiconductor due to a gate field induced Fermi level shift in the low density of electronic-states graphene electrode. Pores introduced in the graphene source electrode are shown to boost the G-VFET performance, which scales with the areal pore density taking advantage of both barrier height lowering and tunnel barrier thinning. Devices with areal pore densities of 20% exhibit on/off ratios and output current densities exceeding 10(6) and 200 mA/cm(2), respectively, at drain voltages below 5 V.

  12. Tunneling and Origin of Large Access Resistance in Layered-Crystal Organic Transistors

    Hamai, Takamasa; Arai, Shunto; Minemawari, Hiromi; Inoue, Satoru; Kumai, Reiji; Hasegawa, Tatsuo

    2017-11-01

    Layered crystallinity of organic semiconductors is crucial to obtaining high-performance organic thin-film transistors (OTFTs), as it allows both smooth-channel-gate-insulator interface formation and efficient two-dimensional carrier transport along the interface. However, the role of vertical transport across the crystalline molecular layers in device operations has not been a crucial subject so far. Here, we show that the interlayer carrier transport causes unusual nonlinear current-voltage characteristics and enormous access resistance in extremely high-quality single-crystal OTFTs based on 2-decyl-7-phenyl[1]-benzothieno[3 ,2 -b ][1]benzothiophene (Ph -BTBT -C10 ) that involve inherent multiple semiconducting π -conjugated layers interposed, respectively, by electrically inert alkyl-chain layers. The output characteristics present layer-number (n )-dependent nonlinearity that becomes more evident at larger n (1 ≤n ≤15 ), demonstrating tunneling across multiple alkyl-chain layers. The n -dependent device mobility and four-probe measurements reveal that the alkyl-chain layers generate a large access resistance that suppresses the device mobility from the intrinsic value of about 20 cm2 V-1 s-1 . Our findings clarify the reason why device characteristics are distributed in single-crystal OTFTs.

  13. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  14. Methacrylate-bonded covalent-organic framework monolithic columns for high performance liquid chromatography.

    Liu, Li-Hua; Yang, Cheng-Xiong; Yan, Xiu-Ping

    2017-01-06

    Covalent-organic frameworks (COFs) are a newfangled class of intriguing microporous materials. Considering their unique properties, COFs should be promising as packing materials for high performance liquid chromatography (HPLC). However, the irregular shape and sub-micrometer size of COFs synthesized via the traditional methods render the main obstacles for the application of COFs in HPLC. Herein, we report the preparation of methacrylate-bonded COF monolithic columns for HPLC to overcome the above obstacles. The prepared COF bonded monolithic columns not only show good homogeneity and permeability, but also give high column efficiency, good resolution and precision for HPLC separation of small molecules including polycyclic aromatic hydrocarbons, phenols, anilines, nonsteroidal anti-inflammatory drugs and benzothiophenes. Compared with the bare polymer monolithic column, the COF bonded monolithic columns show enhanced hydrophobic, π-π and hydrogen bond interactions in reverse phase HPLC. The results reveal the great potential of COF bonded monoliths for HPLC and COFs in separation sciences. Copyright © 2016 Elsevier B.V. All rights reserved.

  15. Charge transport in disordered organic field-effect transistors

    Tanase, Cristina; Blom, Paul W.M.; Meijer, Eduard J.; Leeuw, Dago M. de; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

    2002-01-01

    The transport properties of poly(2,5-thienylene vinylene) (PTV) field-effect transistors (FET) have been investigated as a function of temperature under controlled atmosphere. In a disordered semiconductor as PTV the charge carrier mobility, dominated by hopping between localized states, is

  16. High-performance zno transistors processed via an aqueous carbon-free metal oxide precursor route at temperatures between 80-180 °c

    Lin, Yenhung; Faber, Hendrik; Zhao, Kui; Wang, Qingxiao; Amassian, Aram; McLachlan, Martyn A.; Anthopoulos, Thomas D.

    2013-01-01

    An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <

  17. A highly conducting organic metal derived from an organic-transistor material: benzothienobenzothiophene.

    Kadoya, Tomofumi; Ashizawa, Minoru; Higashino, Toshiki; Kawamoto, Tadashi; Kumeta, Shohei; Matsumoto, Hidetoshi; Mori, Takehiko

    2013-11-07

    BTBT ([1]benzothieno[3,2-b][1]benzothiophene) is an organic semiconductor that realizes high mobility in organic transistors. Here we report that the charge-transfer (CT) salt, (BTBT)2PF6, shows a high room-temperature conductivity of 1500 S cm(-1). This compound exhibits a resistivity jump around 150 K, but when it is covered with Apiezon N grease the resistivity jump is suppressed, and the metallic conductivity is maintained down to 60 K. Owing to the very high conductivity, the ESR signal shows a significantly asymmetric Dysonian lineshape (A/B ≅ 3) even at room temperature. Since most organic conductors are based on strong electron donors, it is remarkable that such a weak electron donor as BTBT realizes a stable and highly conducting organic metal.

  18. Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

    Zhang, Yu

    2017-10-17

    Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid–liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the “sensing channel” can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

  19. Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

    Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

    2017-11-08

    Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

  20. Final Technical Report - Recovery Act: Organic Coatings as Encapsulants for Low Cost, High Performance PV Modules

    Stuart Hellring; Jiping Shao; James Poole

    2011-12-05

    The objective of this project was to evaluate the feasibility of utilizing PPG's commercial organic coatings systems as efficient, modernized encapsulants for low cost, high performance, thin film photovoltaic modules. Our hypothesis was that the combination of an anticorrosive coating with a more traditional barrier topcoat would mitigate many electrochemical processes that are now responsible for the significant portion of photovoltaic (PV) failures, thereby nullifying the extremely high moisture barrier requirements of currently used encapsulation technology. Nine commercially available metal primer coatings and six commercially available top coatings were selected for screening. Twenty-one different primer/top coat combinations were evaluated. The primer coatings were shown to be the major contributor to corrosion inhibition, adhesion, and barrier properties. Two primer coatings and one top coating were downselected for testing on specially-fabricated test modules. The coated test modules passed initial current leakage and insulation testing. Damp Heat testing of control modules showed visible corrosion to the bus bar metal, whereas the coated modules showed none. One of the primer/top coat combinations retained solar power performance after Damp Heat testing despite showing some delamination at the EVA/solar cell interface. Thermal Cycling and Humidity Freeze testing resulted in only one test module retaining its power performance. Failure modes depended on the particular primer/top coating combination used. Overall, this study demonstrated that a relatively thin primer/top coating has the potential to replace the potting film and backsheet in crystalline silicon-based photovoltaic modules. Positive signals were received from commercially available coatings developed for applications having performance requirements different from those required for photovoltaic modules. It is likely that future work to redesign and customize these coatings would result in

  1. High-performance non-volatile organic ferroelectric memory on banknotes

    Khan, Yasser; Bhansali, Unnat Sampatraj; Alshareef, Husam N.

    2012-01-01

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage

  2. Fabrication of an organic field effect transistor using nano imprinting of Ag inks and semiconducting polymers

    Hu, PingAn; Li, Kun; O'Neill, William; Chen, Weilin; Peng, Li; Chu, Daping

    2010-01-01

    A simple and cheap procedure for flexible electronics fabrication was demonstrated by imprinting metallic nanoparticles (NPs) on flexible substrates. Silver NPs with an average diameter of 10 nm were prepared via an improved chemical approach and Ag Np ink was produced in α-terpineol with a concentration up to 15%. Silver micro/nanostructures with a dimension varying from nanometres to microns were produced on a flexible substrate (polyimide) by imprinting the as-prepared silver ink. The fine fluidic properties of an Ag NP/α-terpineol solution and low melting temperatures of silver nanoparticles render a low pressure and low temperature procedure, which is well suited for flexible electronics fabrication. The effects of sintering and mechanical bending on the conductivity of imprinted silver contacts were also investigated. Large area organic field effect transistors (OFET) on flexible substrates were fabricated using an imprinted silver electrode and semiconducting polymer. The OFET with silver electrodes imprinted from our prepared oleic acid stabilized Ag nanoparticle ink show an ideal ohmic contact; therefore, the OFET exhibit high performance (I on /I off ratio: 1 × 10 3 ; mobility: 0.071 cm 2 V −1 s −1 ).

  3. Ternary Blend Composed of Two Organic Donors and One Acceptor for Active Layer of High-Performance Organic Solar Cells.

    Lee, Jong Won; Choi, Yoon Suk; Ahn, Hyungju; Jo, Won Ho

    2016-05-04

    Ternary blends composed of two donor absorbers with complementary absorptions provide an opportunity to enhance the short-circuit current and thus the power conversion efficiency (PCE) of organic solar cells. In addition to complementary absorption of two donors, ternary blends may exhibit favorable morphology for high-performance solar cells when one chooses properly the donor pair. For this purpose, we develop a ternary blend with two donors (diketopyrrolopyrrole-based polymer (PTDPP2T) and small molecule ((TDPP)2Ph)) and one acceptor (PC71BM). The solar cell made of a ternary blend with 10 wt % (TDPP)2Ph exhibits higher PCE of 7.49% as compared with the solar cells with binary blends, PTDPP2T:PC71BM (6.58%) and (TDPP)2Ph:PC71BM (3.21%). The higher PCE of the ternary blend solar cell is attributed mainly to complementary absorption of two donors. However, a further increase in (TDPP)2Ph content in the ternary blend (>10 wt %) decreases the PCE. The ternary blend with 10 wt % (TDPP)2Ph exhibits well-developed morphology with narrow-sized fibrils while the blend with 15 wt % (TDPP)2Ph shows phase separation with large-sized domains, demonstrating that the phase morphology and compatibility of ternary blend are important factors to achieve a high-performance solar cell made of ternary blends.

  4. Ultra-high mobility transparent organic thin film transistors grown by an off-centre spin-coating method.

    Yuan, Yongbo; Giri, Gaurav; Ayzner, Alexander L; Zoombelt, Arjan P; Mannsfeld, Stefan C B; Chen, Jihua; Nordlund, Dennis; Toney, Michael F; Huang, Jinsong; Bao, Zhenan

    2014-01-01

    Organic semiconductors with higher carrier mobility and better transparency have been actively pursued for numerous applications, such as flat-panel display backplane and sensor arrays. The carrier mobility is an important figure of merit and is sensitively influenced by the crystallinity and the molecular arrangement in a crystal lattice. Here we describe the growth of a highly aligned meta-stable structure of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) from a blended solution of C8-BTBT and polystyrene by using a novel off-centre spin-coating method. Combined with a vertical phase separation of the blend, the highly aligned, meta-stable C8-BTBT films provide a significantly increased thin film transistor hole mobility up to 43 cm(2) Vs(-1) (25 cm(2) Vs(-1) on average), which is the highest value reported to date for all organic molecules. The resulting transistors show high transparency of >90% over the visible spectrum, indicating their potential for transparent, high-performance organic electronics.

  5. Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps

    Mei, Yaochuan

    2017-08-02

    The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

  6. Crossover from band-like to thermally activated charge transport in organic transistors due to strain-induced traps.

    Mei, Yaochuan; Diemer, Peter J; Niazi, Muhammad R; Hallani, Rawad K; Jarolimek, Karol; Day, Cynthia S; Risko, Chad; Anthony, John E; Amassian, Aram; Jurchescu, Oana D

    2017-08-15

    The temperature dependence of the charge-carrier mobility provides essential insight into the charge transport mechanisms in organic semiconductors. Such knowledge imparts critical understanding of the electrical properties of these materials, leading to better design of high-performance materials for consumer applications. Here, we present experimental results that suggest that the inhomogeneous strain induced in organic semiconductor layers by the mismatch between the coefficients of thermal expansion (CTE) of the consecutive device layers of field-effect transistors generates trapping states that localize charge carriers. We observe a universal scaling between the activation energy of the transistors and the interfacial thermal expansion mismatch, in which band-like transport is observed for similar CTEs, and activated transport otherwise. Our results provide evidence that a high-quality semiconductor layer is necessary, but not sufficient, to obtain efficient charge-carrier transport in devices, and underline the importance of holistic device design to achieve the intrinsic performance limits of a given organic semiconductor. We go on to show that insertion of an ultrathin CTE buffer layer mitigates this problem and can help achieve band-like transport on a wide range of substrate platforms.

  7. Electric field confinement effect on charge transport in organic field-effect transistors

    Li, X.; Kadashchuk, A.; Fishchuk, I.I.; Smaal, W.T.T.; Gelinck, G.H.; Broer, D.J.; Genoe, J.; Heremans, P.; Bässler, H.

    2012-01-01

    While it is known that the charge-carrier mobility in organic semiconductors is only weakly dependent on the electric field at low fields, the experimental mobility in organic field-effect transistors using silylethynyl-substituted pentacene is found to be surprisingly field dependent at low

  8. Integrated Materials Design of Organic Semiconductors for Field-Effect Transistors

    Mei, Jianguo; Diao, Ying; Appleton, Anthony L.; Fang, Lei; Bao, Zhenan

    2013-01-01

    The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm2/(V s). In this perspective, we highlight

  9. Fully transparent conformal organic thin-film transistor array and its application as LED front driving.

    Cui, Nan; Ren, Hang; Tang, Qingxin; Zhao, Xiaoli; Tong, Yanhong; Hu, Wenping; Liu, Yichun

    2018-02-22

    A fully transparent conformal organic thin-film field-effect transistor array is demonstrated based on a photolithography-compatible ultrathin metallic grid gate electrode and a solution-processed C 8 -BTBT film. The resulting organic field-effect transistor array exhibits a high optical transparency of >80% over the visible spectrum, mobility up to 2 cm 2 V -1 s -1 , on/off ratio of 10 5 -10 6 , switching current of >0.1 mA, and excellent light stability. The transparent conformal transistor array is demonstrated to adhere well to flat and curved LEDs as front driving. These results present promising applications of the solution-processed wide-bandgap organic semiconductor thin films in future large-scale transparent conformal active-matrix displays.

  10. Controlling the dimensionality of charge transport in organic thin-film transistors

    Laiho, Ari; Herlogsson, Lars; Forchheimer, Robert; Crispin, Xavier; Berggren, Magnus

    2011-01-01

    Electrolyte-gated organic thin-film transistors (OTFTs) can offer a feasible platform for future flexible, large-area and low-cost electronic applications. These transistors can be divided into two groups on the basis of their operation mechanism: (i) field-effect transistors that switch fast but carry much less current than (ii) the electrochemical transistors which, on the contrary, switch slowly. An attractive approach would be to combine the benefits of the field-effect and the electrochemical transistors into one transistor that would both switch fast and carry high current densities. Here we report the development of a polyelectrolyte-gated OTFT based on conjugated polyelectrolytes, and we demonstrate that the OTFTs can be controllably operated either in the field-effect or the electrochemical regime. Moreover, we show that the extent of electrochemical doping can be restricted to a few monolayers of the conjugated polyelectrolyte film, which allows both high current densities and fast switching speeds at the same time. We propose an operation mechanism based on self-doping of the conjugated polyelectrolyte backbone by its ionic side groups. PMID:21876143

  11. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

    Gutiérrez-Heredia, Gerardo

    2010-10-04

    We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas \\'parylene only\\' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

  12. A flexible organic active matrix circuit fabricated using novel organic thin film transistors and organic light-emitting diodes

    Gutié rrez-Heredia, Gerardo; Gonzá lez, Luis A.; Alshareef, Husam N.; Gnade, Bruce E.; Quevedo-Ló pez, Manuel Angel Quevedo

    2010-01-01

    We present an active matrix circuit fabricated on plastic (polyethylene naphthalene, PEN) and glass substrates using organic thin film transistors and organic capacitors to control organic light-emitting diodes (OLEDs). The basic circuit is fabricated using two pentacene-based transistors and a capacitor using a novel aluminum oxide/parylene stack (Al2O3/ parylene) as the dielectric for both the transistor and the capacitor. We report that our circuit can deliver up to 15 μA to each OLED pixel. To achieve 200 cd m-2 of brightness a 10 μA current is needed; therefore, our approach can initially deliver 1.5× the required current to drive a single pixel. In contrast to parylene-only devices, the Al2O 3/parylene stack does not fail after stressing at a field of 1.7 MV cm-1 for >10 000 s, whereas 'parylene only' devices show breakdown at approximately 1000 s. Details of the integration scheme are presented. © 2010 IOP Publishing Ltd.

  13. Controlling the mode of operation of organic transistors through side-chain engineering

    Giovannitti, Alexander

    2016-10-11

    Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors.

  14. Controlling the mode of operation of organic transistors through side-chain engineering

    Giovannitti, Alexander; Sbircea, Dan-Tiberiu; Inal, Sahika; Nielsen, Christian B.; Bandiello, Enrico; Hanifi, David A.; Sessolo, Michele; Malliaras, George G.; McCulloch, Iain; Rivnay, Jonathan

    2016-01-01

    Electrolyte-gated organic transistors offer low bias operation facilitated by direct contact of the transistor channel with an electrolyte. Their operation mode is generally defined by the dimensionality of charge transport, where a field-effect transistor allows for electrostatic charge accumulation at the electrolyte/semiconductor interface, whereas an organic electrochemical transistor (OECT) facilitates penetration of ions into the bulk of the channel, considered a slow process, leading to volumetric doping and electronic transport. Conducting polymer OECTs allow for fast switching and high currents through incorporation of excess, hygroscopic ionic phases, but operate in depletion mode. Here, we show that the use of glycolated side chains on a thiophene backbone can result in accumulation mode OECTs with high currents, transconductance, and sharp subthreshold switching, while maintaining fast switching speeds. Compared with alkylated analogs of the same backbone, the triethylene glycol side chains shift the mode of operation of aqueous electrolyte-gated transistors from interfacial to bulk doping/transport and show complete and reversible electrochromism and high volumetric capacitance at low operating biases. We propose that the glycol side chains facilitate hydration and ion penetration, without compromising electronic mobility, and suggest that this synthetic approach can be used to guide the design of organic mixed conductors. PMID:27790983

  15. Top contact organic field effect transistors fabricated using a photolithographic process

    Wang Hong; Peng Ying-Quan; Ji Zhuo-Yu; Shang Li-Wei; Liu Xing-Hua; Liu Ming

    2011-01-01

    This paper proposes an effective method of fabricating top contact organic field effect transistors by using a photolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated successfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  16. Probing organic field effect transistors in situ during operation using SFG.

    Ye, Hongke; Abu-Akeel, Ashraf; Huang, Jia; Katz, Howard E; Gracias, David H

    2006-05-24

    In this communication, we report results obtained using surface-sensitive IR+Visible Sum Frequency Generation (SFG) nonlinear optical spectroscopy on interfaces of organic field effect transistors during operation. We observe remarkable correlations between trends in the surface vibrational spectra and electrical properties of the transistor, with changes in gate voltage (VG). These results suggest that field effects on electronic conduction in thin film organic semiconductor devices are correlated to interfacial nonlinear optical characteristics and point to the possibility of using SFG spectroscopy to monitor electronic properties of OFETs.

  17. Array of organic thin film transistors integrated with organic light emitting diodes on a plastic substrate

    Ryu, Gi-Seong; Choe, Ki-Beom; Song, Chung-Kun

    2006-01-01

    In order to demonstrate the possible application of an organic thin film transistor (OTFT) to a flexible active matrix organic light emitting diode (OLED) an array of 64 x 64 pixels was fabricated on a 4-in. size poly-ethylene-terephehalate substrate. Each pixel was composed of one OTFT integrated with one OLED. OTFTs successfully drove OLEDs by varying current in a wide range and some images were displayed on the array by emitting green light. The OTFTs used poly(4-vinylphenol) for the gate and pentacene for the semiconductor taking account compatibility with the PET substrate. The average mobility in the array was 0.2 cm 2 /V.s, which was reduced from 1.0 cm 2 /V.s in a single OTFT, and its variation over the entire substrate was 10%

  18. A hydrogel capsule as gate dielectric in flexible organic field-effect transistors

    Dumitru, L. M.; Manoli, K.; Magliulo, M.; Torsi, L., E-mail: luisa.torsi@uniba.it [Department of Chemistry, University of Bari “Aldo Moro”, Via Orabona 4, Bari I-70126 (Italy); Ligonzo, T. [Department of Physics, University of Bari “Aldo Moro”, Via Orabona 4, Bari I-70126 (Italy); Palazzo, G. [Department of Chemistry, University of Bari “Aldo Moro”, Via Orabona 4, Bari I-70126 (Italy); Center of Colloid and Surface Science—CSGI—Bari Unit, Via Orabona 4, Bari I-70126 (Italy)

    2015-01-01

    A jellified alginate based capsule serves as biocompatible and biodegradable electrolyte system to gate an organic field-effect transistor fabricated on a flexible substrate. Such a system allows operating thiophene based polymer transistors below 0.5 V through an electrical double layer formed across an ion-permeable polymeric electrolyte. Moreover, biological macro-molecules such as glucose-oxidase and streptavidin can enter into the gating capsules that serve also as delivery system. An enzymatic bio-reaction is shown to take place in the capsule and preliminary results on the measurement of the electronic responses promise for low-cost, low-power, flexible electronic bio-sensing applications using capsule-gated organic field-effect transistors.

  19. Surface engineering of ferroelectric polymer for the enhanced electrical performance of organic transistor memory

    Kim, Do-Kyung; Lee, Gyu-Jeong; Lee, Jae-Hyun; Kim, Min-Hoi; Bae, Jin-Hyuk

    2018-05-01

    We suggest a viable surface control method to improve the electrical properties of organic nonvolatile memory transistors. For viable surface control, the surface of the ferroelectric insulator in the memory field-effect transistors was modified using a smooth-contact-curing process. For the modification of the ferroelectric polymer, during the curing of the ferroelectric insulators, the smooth surface of a soft elastomer contacts intimately with the ferroelectric surface. This smooth-contact-curing process reduced the surface roughness of the ferroelectric insulator without degrading its ferroelectric properties. The reduced roughness of the ferroelectric insulator increases the mobility of the organic field-effect transistor by approximately eight times, which results in a high memory on–off ratio and a low-voltage reading operation.

  20. Patterning solution-processed organic single-crystal transistors with high device performance

    Yun Li

    2011-06-01

    Full Text Available We report on the patterning of organic single-crystal transistors with high device performance fabricated via a solution process under ambient conditions. The semiconductor was patterned on substrates via surface selective deposition. Subsequently, solvent-vapor annealing was performed to reorganize the semiconductor into single crystals. The transistors exhibited field-effect mobility (μFET of up to 3.5 cm2/V s. Good reliability under bias-stress conditions indicates low density of intrinsic defects in crystals and low density of traps at the active interfaces. Furthermore, the Y function method clearly suggests that the variation of μFET of organic crystal transistors was caused by contact resistance. Further improvement of the device with higher μFET with smaller variation can be expected when lower and more uniform contact resistance is achieved.

  1. High-performance non-volatile organic ferroelectric memory on banknotes

    Khan, Yasser

    2012-03-21

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. High-performance non-volatile organic ferroelectric memory on banknotes.

    Khan, M A; Bhansali, Unnat S; Alshareef, H N

    2012-04-24

    High-performance non-volatile polymer ferroelectric memory are fabricated on banknotes using poly(vinylidene fluoride trifluoroethylene). The devices show excellent performance with high remnant polarization, low operating voltages, low leakage, high mobility, and long retention times. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Organic semiconductor growth and morphology considerations for organic thin-film transistors.

    Virkar, Ajay A; Mannsfeld, Stefan; Bao, Zhenan; Stingelin, Natalie

    2010-09-08

    Analogous to conventional inorganic semiconductors, the performance of organic semiconductors is directly related to their molecular packing, crystallinity, growth mode, and purity. In order to achieve the best possible performance, it is critical to understand how organic semiconductors nucleate and grow. Clever use of surface and dielectric modification chemistry can allow one to control the growth and morphology, which greatly influence the electrical properties of the organic transistor. In this Review, the nucleation and growth of organic semiconductors on dielectric surfaces is addressed. The first part of the Review concentrates on small-molecule organic semiconductors. The role of deposition conditions on film formation is described. The modification of the dielectric interface using polymers or self-assembled mono-layers and their effect on organic-semiconductor growth and performance is also discussed. The goal of this Review is primarily to discuss the thin-film formation of organic semiconducting species. The patterning of single crystals is discussed, while their nucleation and growth has been described elsewhere (see the Review by Liu et. al).([¹]) The second part of the Review focuses on polymeric semiconductors. The dependence of physico-chemical properties, such as chain length (i.e., molecular weight) of the constituting macromolecule, and the influence of small molecular species on, e.g., melting temperature, as well as routes to induce order in such macromolecules, are described.

  4. Fired Up by Commitment, Example, and Values: How High-Performance Organizations Develop Leadership

    Kersh, Kevin

    2002-01-01

    Each year, organizations big and small, public and private spend tremendous resources on programs to develop leaders that will guide those organizations to success, preferably extraordinary success...

  5. Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits

    Hanna, Amir; Hussain, Aftab M.; Hussain, Muhammad Mustafa

    2015-01-01

    We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.

  6. Wavy Channel architecture thin film transistor (TFT) using amorphous zinc oxide for high-performance and low-power semiconductor circuits

    Hanna, Amir

    2015-08-12

    We report a Wavy Channel (WC) architecture thin film transistor (TFT) for extended device width by integrating continuous vertical fin like features with lateral continuous plane in the substrate. For a WC TFT which has 50% larger device width, the enhancement in the output drive current is 100%, when compared to a conventional planar TFT consuming the same chip area. This current increase is attributed to both the extra width and enhanced field effect mobility due to corner effects. This shows the potential of WC architecture to boast circuit performance without the need for aggressive gate length scaling. © 2015 IEEE.

  7. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells

    Steirer, K. Xerxes; Berry, Joseph J.; Chesin, Jordan P.; Lloyd, Matthew T.; Widjonarko, Nicodemus Edwin; Miedaner, Alexander; Curtis, Calvin J.; Ginley, David S.; Olson, Dana C.

    2017-01-10

    A method for the application of solution processed metal oxide hole transport layers in organic photovoltaic devices and related organic electronics devices is disclosed. The metal oxide may be derived from a metal-organic precursor enabling solution processing of an amorphous, p-type metal oxide. An organic photovoltaic device having solution processed, metal oxide, thin-film hole transport layer.

  8. Realization of size controllable graphene micro/nanogap with a micro/nanowire mask method for organic field-effect transistors

    Liao, Zhiyu; Wan, Qing; Liu, Huixuan

    2011-01-01

    with the graphene micro/nanogap bottom electrodes. The ultrathin thickness of the graphene, combined with its good compatibility with organic semiconductors, and high electrical conductivity produced high-performance CuPc film device with mobility at 0.053 cm(2)/Vs and on/off ratio at 10(5), showing promising......A size controllable graphene micro/nanogap fabrication method using micro/nanowire as mask is presented. The gap dimension can be adjusted by the diameter of the mask wire. As a typical application, copper phthalocyanine (CuPc) film organic field-effect transistors (OFETs) were fabricated...

  9. Exciton-polaron quenching in organic thin-film transistors studied by fluorescence lifetime imaging microscopy

    Jensen, Per Baunegaard With; Leißner, Till; Osadnik, Andreas

    Organic semiconductors show great potential in electronic and optical applications. However, a major challenge is the degradation of the semiconductor materials that cause a reduction in device performance. Here, we present our investigations of Organic Thin Film Transistors (OTFT) based...... that correlates with the local charge density indicates a pronounced exciton quenching by the injected charges. Subsequent FLIM measurements on previously biased OTFT devices show a general decrease in fluorescence lifetime suggesting degradation of the organic semiconductor. This is correlated with the results...

  10. Bias stress effect and recovery in organic field effect transistors : proton migration mechanism

    Sharma, A.; Mathijssen, S.G.J.; Kemerink, M.; Leeuw, de D.M.; Bobbert, P.A.; Bao, Z.; McCulloch, I.

    2010-01-01

    Organic field-effect transistors exhibit operational instabilities when a gate bias is applied. For a constant gate bias the threshold voltage shifts towards the applied gate bias voltage, an effect known as the bias-stress effect. We have performed a detailed experimental and theoretical study of

  11. Controlling morphology and molecular order of solution-processed organic semiconductors for transistors

    Li, X.

    2012-01-01

    As a potential low-cost alternative to traditional amorphous-silicon based devices, organic field-effect transistors (OFETs) are expected to be incorporated into all-plastic integrated circuits and flexible display backplanes. More recently, breakthroughs have been made in the performance of OFETs

  12. Liquid electrolyte positioning along the device channel influences the operation of Organic Electro-Chemical Transistors

    D'angelo, Pasquale; Coppedè , Nicola; Tarabella, Giuseppe; Romeo, Agostino; Gentile, Francesco T.; Iannotta, Salvatore; Di Fabrizio, Enzo M.; Mosca, Roberto

    2014-01-01

    In this work, we show the influence of the liquid electrolyte adsorption by porous films made of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), PEDOT:PSS, on the operation of an Organic Electro-Chemical Transistor with an active channel

  13. Influence of the semiconductor oxidation potential on the operational stability of organic field-effect transistors

    Sharma, A.; Mathijssen, S.G.J.; Bobbert, P.A.; Leeuw, de D.M.

    2011-01-01

    During prolonged application of a gate bias, organic field-effect transistors show a gradual shift of the threshold voltage towards the applied gate bias voltage. The shift follows a stretched-exponential time dependence governed by a relaxation time. Here, we show that a thermodynamic analysis

  14. Tuning Optoelectronic Properties of Ambipolar Organic Light-Emitting Transistors Using a Bulk-Heterojunction Approach

    Loi, Maria Antonietta; Rost-Bietsch, Constance; Murgia, Mauro; Karg, Siegfried; Riess, Walter; Muccini, Michele

    2006-01-01

    Bulk-heterojunction engineering is demonstrated as an approach to producing ambipolar organic light-emitting field-effect transistors with tunable electrical and optoelectronic characteristics. The electron and hole mobilities, as well as the electroluminescence intensity, can be tuned over a large

  15. Air-stable complementary-like circuits based on organic ambipolar transistors

    Anthopoulos, Thomas D.; Setayesh, Sepas; Smits, Edsger; Cantatore, Eugenio; Boer ,de Bert; Blom, Paul W. M.; de Leeuw, Dago M.; Cölle, Michael

    2006-01-01

    Air stable complementary-like circuits, such as voltage inverters (see figure) and ring oscillators, are fabricated using ambipolar organic transistors based on a nickel dithiolene derivative. In addition to the complementary-like character of the circuits, the technology is very simple and fully

  16. Detection of saliva-range glucose concentrations using organic thin-film transistors

    Elkington, D.; Belcher, W. J.; Dastoor, P. C.; Zhou, X. J.

    2014-01-01

    We describe the development of a glucose sensor through direct incorporation of an enzyme (glucose oxidase) into the gate of an organic thin film transistor (OTFT). We show that glucose diffusion is the key determinant of the device response time and present a mechanism of glucose sensing in these devices that involves protonic doping of the transistor channel via enzymatic oxidation of glucose. The integrated OTFT sensor is sensitive across 4 decades of glucose concentration; a range that encompasses both the blood and salivary glucose concentration levels. As such, this work acts as a proof-of-concept for low-cost printed biosensors for salivary glucose.

  17. Detection of saliva-range glucose concentrations using organic thin-film transistors

    Elkington, D.; Belcher, W. J.; Dastoor, P. C.; Zhou, X. J. [Centre for Organic Electronics, University of Newcastle, Callaghan, New South Wales 2308 (Australia)

    2014-07-28

    We describe the development of a glucose sensor through direct incorporation of an enzyme (glucose oxidase) into the gate of an organic thin film transistor (OTFT). We show that glucose diffusion is the key determinant of the device response time and present a mechanism of glucose sensing in these devices that involves protonic doping of the transistor channel via enzymatic oxidation of glucose. The integrated OTFT sensor is sensitive across 4 decades of glucose concentration; a range that encompasses both the blood and salivary glucose concentration levels. As such, this work acts as a proof-of-concept for low-cost printed biosensors for salivary glucose.

  18. Organic Diode Rectifiers Based on a High-Performance Conjugated Polymer for a Near-Field Energy-Harvesting Circuit.

    Higgins, Stuart G; Agostinelli, Tiziano; Markham, Steve; Whiteman, Robert; Sirringhaus, Henning

    2017-12-01

    Organic diodes manufactured on a plastic substrate capable of rectifying a high-frequency radio-frequency identification signal (13.56 MHz), with sufficient power to operate an interactive smart tag, are reported. A high-performance conjugated semiconductor (an indacenodithiophene-benzothiadiazole copolymer) is combined with a carefully optimized architecture to satisfy the electrical requirements for an organic-semiconductor-based logic chip. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Organic-inorganic hybrid materials as semiconducting channels in thin-film field-effect transistors

    Kagan; Mitzi; Dimitrakopoulos

    1999-10-29

    Organic-inorganic hybrid materials promise both the superior carrier mobility of inorganic semiconductors and the processability of organic materials. A thin-film field-effect transistor having an organic-inorganic hybrid material as the semiconducting channel was demonstrated. Hybrids based on the perovskite structure crystallize from solution to form oriented molecular-scale composites of alternating organic and inorganic sheets. Spin-coated thin films of the semiconducting perovskite (C(6)H(5)C(2)H(4)NH(3))(2)SnI(4) form the conducting channel, with field-effect mobilities of 0.6 square centimeters per volt-second and current modulation greater than 10(4). Molecular engineering of the organic and inorganic components of the hybrids is expected to further improve device performance for low-cost thin-film transistors.

  20. Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.

    Kwon, Guhyun; Kim, Keetae; Choi, Byung Doo; Roh, Jeongkyun; Lee, Changhee; Noh, Yong-Young; Seo, SungYong; Kim, Myung-Gil; Kim, Choongik

    2017-06-01

    The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Materials and devices with applications in high-end organic transistors

    Takeya, J.; Uemura, T.; Sakai, K.; Okada, Y.

    2014-01-01

    The development of functional materials typically benefits from an understanding of the microscopic mechanisms by which those materials operate. To accelerate the development of organic semiconductor devices with industrial applications in flexible and printed electronics, it is essential to elucidate the mechanisms of charge transport associated with molecular-scale charge transfer. In this study, we employed Hall effect measurements to differentiate coherent band transport from site-to-site hopping. The results of tests using several different molecular systems as the active semiconductor layers demonstrate that high-mobility charge transport in recently-developed solution-crystallized organic transistors is the result of a band-like mechanism. These materials, which have the potential to be organic transistors exhibiting the highest speeds ever obtained, are significantly different from the conventional lower-mobility organic semiconductors with incoherent hopping-like transport mechanisms which were studied in the previous century. They may be categorized as “high-end” organic semiconductors, characterized by their coherent electronic states and high values of mobility which are close to or greater than 10 cm 2 /Vs. - Highlights: • Transport in high-mobility solution-crystallized organic transistors is band-like. • High-end organic semiconductors carry coherent electrons with mobility > 10 cm 2 /Vs. • Hall-effect measurement differentiates coherent band transport from hopping. • We found an anomalous pressure effect in organic semiconductors

  2. Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

    Ahn, Byung Du [School of Electrical and Electronic Engineering, 50, Yonsei University, Seoul 120-749 (Korea, Republic of); Park, Jin-Seong [Division of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of); Chung, K. B., E-mail: kbchung@dongguk.edu [Division of Physics and Semiconductor Science, Dongguk University, Seoul 100-715 (Korea, Republic of)

    2014-10-20

    Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of device performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.

  3. Voltage and Thermally Driven Roll-to-Roll Organic Printed Transistor Made in Ambient Air Conditions

    Pastorelli, Francesco

    of the organic semiconductor poly3hexylthiophene and the dielectric material polyvinylphenol before the gate was applied by screen printing. All the processing was realized in ambient air on a PET flexible substrate. We explore the footprint and the practically accessible geometry of such devices with a special......Resume: Organic thin film transistors offer great potential for use in flexible electronics. Much of this potential lies in the solution processability of the organic polymers enabling both roll coating and printing on flexible substrates and thus greatly reducing the material and fabrication costs....... We present flexible organic power transistors prepared by fast (20 m min−1) roll-to-roll flexographic printing of the drain and source electrode structures, with an interspace below 50 um, directly on polyester foil[1]. The devices have top gate architecture and were completed by slotdie coating...

  4. High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

    Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid

    2012-01-01

    Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance...

  5. Principals of Design for High Performing Organizations: A Suggested Research Program. Appendixes

    1994-03-01

    unit trust and organizational effectiveness (Cummings), biases in management perceptions of organization and environmental characteristics ( Starbuck ...including subcontracting, franchises , work-family issues (Bailyn), the hierarchy problem in organization design (Ettlie), linkages among HRM activities and...was the call for longitudinal studies. Bartunek called for longitudinal field studies and Starbuck noted the need for parallel case studies involving

  6. Top-gate organic depletion and inversion transistors with doped channel and injection contact

    Liu, Xuhai; Kasemann, Daniel, E-mail: daniel.kasemann@iapp.de; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Strasse 1, 01069 Dresden (Germany)

    2015-03-09

    Organic field-effect transistors constitute a vibrant research field and open application perspectives in flexible electronics. For a commercial breakthrough, however, significant performance improvements are still needed, e.g., stable and high charge carrier mobility and on-off ratio, tunable threshold voltage, as well as integrability criteria such as n- and p-channel operation and top-gate architecture. Here, we show pentacene-based top-gate organic transistors operated in depletion and inversion regimes, realized by doping source and drain contacts as well as a thin layer of the transistor channel. By varying the doping concentration and the thickness of the doped channel, we control the position of the threshold voltage without degrading on-off ratio or mobility. Capacitance-voltage measurements show that an inversion channel can indeed be formed, e.g., an n-doped channel can be inverted to a p-type inversion channel with highly p-doped contacts. The Cytop polymer dielectric minimizes hysteresis, and the transistors can be biased for prolonged cycles without a shift of threshold voltage, indicating excellent operation stability.

  7. Strategy Only Matters A Bit: The role of Strategy in the High Performance Organization

    André de Waal

    2011-01-01

    Ever since Porter’s book Competitive Strategy (1980), developing a generic strategy and then executing this strategy well has been seen as the main source of competitive advantage for organizations. However, since the publication of Porter’s book the business environment has changed dramatically, giving rise to the questions: How important is strategy nowadays for an organization to become and stay successful? and Are the generic strategies of Porter still valid? To find answers on these ques...

  8. Concept of rewritable organic ferroelectric random access memory in two lateral transistors-in-one cell architecture

    Kim, Min-Hoi; Lee, Gyu Jeong; Keum, Chang-Min; Lee, Sin-Doo

    2014-01-01

    We propose a concept of rewritable ferroelectric random access memory (RAM) with two lateral organic transistors-in-one cell architecture. Lateral integration of a paraelectric organic field-effect transistor (OFET), being a selection transistor, and a ferroelectric OFET as a memory transistor is realized using a paraelectric depolarizing layer (PDL) which is patterned on a ferroelectric insulator by transfer-printing. For the selection transistor, the key roles of the PDL are to reduce the dipolar strength and the surface roughness of the gate insulator, leading to the low memory on–off ratio and the high switching on–off current ratio. A new driving scheme preventing the crosstalk between adjacent memory cells is also demonstrated for the rewritable operation of the ferroelectric RAM. (paper)

  9. A high performance Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel

    Li, Wei; Liu, Hongxia; Wang, Shulong; Wang, Qianqiong; Chen, Shupeng

    2017-06-01

    In this paper, a new Ge/Si0.5Ge0.5/Si heterojunction dual sources tunneling transistor with a U-shaped channel (Ge_DUTFET) is proposed and investigated by Silvaco-Atlas simulation. The line tunneling perpendicular to channel and point tunneling parallel to channel simultaneously occur on both sides of the gate. The Ge is chosen as the source region material to increase the line tunneling current. The designed heterojunction between the Ge source and Si channel decreases the point tunneling barrier width to enhance the point tunneling current. And this heterojunction can also promote the Ge_DUTFET to occur point tunneling at the small gate voltage, which makes it obtain the smaller turn-on voltage. Furthermore, the Si0.5Ge0.5 buffer layer is also helpful for the enhancement of performance. The simulation results reveal that Ge_DUTFET has the better performance compared with the Si_DUTFET. The on-state current and average subthreshold swing of Ge_DUTFET are 1.11 × 10-5A/μm and 35.1mV/dec respectively. The max cut-off frequency (fT) and gain bandwidth product (GBW) are 26.6 GHz and 16.6 GHz respectively. The fT and GBW of the Ge_DUTFET are respectively increased by ∼27.4% and ∼84.3% compared with the Si_DUTFET.

  10. Fabrication of high-performance InGaZnOx thin film transistors based on control of oxidation using a low-temperature plasma

    Takenaka, Kosuke; Endo, Masashi; Uchida, Giichiro; Setsuhara, Yuichi

    2018-04-01

    This work demonstrated the low-temperature control of the oxidation of Amorphous InGaZnOx (a-IGZO) films using inductively coupled plasma as a means of precisely tuning the properties of thin film transistors (TFTs) and as an alternative to post-deposition annealing at high temperatures. The effects of the plasma treatment of the as-deposited a-IGZO films were investigated by assessing the electrical properties of TFTs incorporating these films. A TFT fabricated using an a-IGZO film exposed to an Ar-H2-O2 plasma at substrate temperatures as low as 300 °C exhibited the best performance, with a field effect mobility as high as 42.2 cm2 V-1 s-1, a subthreshold gate voltage swing of 1.2 V decade-1, and a threshold voltage of 2.8 V. The improved transfer characteristics of TFTs fabricated with a-IGZO thin films treated using an Ar-H2-O2 plasma are attributed to the termination of oxygen vacancies around Ga and Zn atoms by OH radicals in the gas phase.

  11. Organizing principles and management climate in high-performing municipal elderly care.

    Kajonius, Petri; Kazemi, Ali; Tengblad, Stefan

    2016-01-01

    Purpose - Previous research has shown that user-oriented care predicts older persons' satisfaction with care. What is yet to be researched is how senior management facilitates the implementation of user-oriented care. The purpose of this study is to investigate the organizing principles and management climate characterizing successful elderly care. Design/methodology/approach - The department in one highly ranked municipality was selected and compared with a more average municipality. On-site in-depth semi-structured interviews with department managers and participatory observations at managers' meetings were conducted in both municipalities. Findings - Results revealed three key principles for successful elderly care: organizing care from the viewpoint of the older person; recruiting and training competent and autonomous employees; instilling a vision for the mission that guides operations at all levels in the organization. Furthermore, using climate theory to interpret the empirical material, in the highly successful municipality the management climate was characterized by affective support and cognitive autonomy, in contrast to a more instrumental work climate primarily focusing on organizational structure and doing the right things characterizing the more average municipality. Originality/value - The authors suggest that guiding organizing principles are intertwined with management climate and that there are multiple perspectives that must be considered by the management, that is, the views of the older persons, the co-workers and the mission. These results can guide future care quality developments, and increase the understanding of the importance of organizational climate at the senior management level.

  12. Characterization of Screen-Printed Organic Electrochemical Transistors to Detect Cations of Different Sizes

    Laura Contat-Rodrigo

    2016-09-01

    Full Text Available A novel screen-printing fabrication method was used to prepare organic electrochemical transistors (OECTs based on poly(3,4-ethylenedioxythiophene doped with polysterene sulfonate (PEDOT:PSS. Initially, three types of these screen-printed OECTs with a different channel and gate areas ratio were compared in terms of output characteristics, transfer characteristics, and current modulation in a phosphate buffered saline (PBS solution. Results confirm that transistors with a gate electrode larger than the channel exhibit higher modulation. OECTs with this geometry were therefore chosen to investigate their ion-sensitive properties in aqueous solutions of cations of different sizes (sodium and rhodamine B. The effect of the gate electrode was additionally studied by comparing these all-PEDOT:PSS transistors with OECTs with the same geometry but with a non-polarizable metal gate (Ag. The operation of the all-PEDOT:PSS OECTs yields a response that is not dependent on a Na+ or rhodamine concentration. The weak modulation of these transistors can be explained assuming that PEDOT:PSS behaves like a supercapacitor. In contrast, the operation of Ag-Gate OECTs yields a response that is dependent on ion concentration due to the redox reaction taking place at the gate electrode with Cl− counter-ions. This indicates that, for cation detection, the response is maximized in OECTs with non-polarizable gate electrodes.

  13. Flexible Textile-Based Organic Transistors Using Graphene/Ag Nanoparticle Electrode

    Kim, Youn; Kwon, Yeon Ju; Lee, Kang Eun; Oh, Youngseok; Um, Moon-Kwang; Seong, Dong Gi; Lee, Jea Uk

    2016-01-01

    Highly flexible and electrically-conductive multifunctional textiles are desirable for use in wearable electronic applications. In this study, we fabricated multifunctional textile composites by vacuum filtration and wet-transfer of graphene oxide films on a flexible polyethylene terephthalate (PET) textile in association with embedding Ag nanoparticles (AgNPs) to improve the electrical conductivity. A flexible organic transistor can be developed by direct transfer of a dielectric/semiconducting double layer on the graphene/AgNP textile composite, where the textile composite was used as both flexible substrate and conductive gate electrode. The thermal treatment of a textile-based transistor enhanced the electrical performance (mobility = 7.2 cm2·V−1·s−1, on/off current ratio = 4 × 105, and threshold voltage = −1.1 V) due to the improvement of interfacial properties between the conductive textile electrode and the ion-gel dielectric layer. Furthermore, the textile transistors exhibited highly stable device performance under extended bending conditions (with a bending radius down to 3 mm and repeated tests over 1000 cycles). We believe that our simple methods for the fabrication of graphene/AgNP textile composite for use in textile-type transistors can potentially be applied to the development of flexible large-area electronic clothes. PMID:28335276

  14. Utilizing Schottky barriers to suppress short-channel effects in organic transistors

    Fernández, Anton F.; Zojer, Karin

    2017-10-01

    Transistors with short channel lengths exhibit profound deviations from the ideally expected behavior. One of the undesired short-channel effects is an enlarged OFF current that is associated with a premature turn on of the transistor. We present an efficient approach to suppress the OFF current, defined as the current at zero gate source bias, in short-channel organic transistors. We employ two-dimensional device simulations based on the drift-diffusion model to demonstrate that intentionally incorporating a Schottky barrier for injection enhances the ON-OFF ratio in both staggered and coplanar transistor architectures. The Schottky barrier is identified to directly counteract the origin of enlarged OFF currents: Short channels promote a drain-induced barrier lowering. The latter permits unhindered injection of charges even at reverse gate-source bias. An additional Schottky barrier hampers injection for such points of operations. We explain how it is possible to find the Schottky barrier of the smallest height necessary to exactly compensate for the premature turn on. This approach offers a substantial enhancement of the ON-OFF ratio. We show that this roots in the fact that such optimal barrier heights offer an excellent compromise between an OFF current diminished by orders of magnitude and an only slightly reduced ON current.

  15. Improved uniformity in high-performance organic photovoltaics enabled by (3-aminopropyl)triethoxysilane cathode functionalization.

    Luck, Kyle A; Shastry, Tejas A; Loser, Stephen; Ogien, Gabriel; Marks, Tobin J; Hersam, Mark C

    2013-12-28

    Organic photovoltaics have the potential to serve as lightweight, low-cost, mechanically flexible solar cells. However, losses in efficiency as laboratory cells are scaled up to the module level have to date impeded large scale deployment. Here, we report that a 3-aminopropyltriethoxysilane (APTES) cathode interfacial treatment significantly enhances performance reproducibility in inverted high-efficiency PTB7:PC71BM organic photovoltaic cells, as demonstrated by the fabrication of 100 APTES-treated devices versus 100 untreated controls. The APTES-treated devices achieve a power conversion efficiency of 8.08 ± 0.12% with histogram skewness of -0.291, whereas the untreated controls achieve 7.80 ± 0.26% with histogram skewness of -1.86. By substantially suppressing the interfacial origins of underperforming cells, the APTES treatment offers a pathway for fabricating large-area modules with high spatial performance uniformity.

  16. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    Han, Yang

    2018-03-13

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  17. Anion-induced N-doping of naphthalenediimide polymer semiconductor in organic thin-film transistors

    Han, Yang; Fei, Zhuping; Lin, Yen-Hung; Martin, Jaime; Tuna, Floriana; Anthopoulos, Thomas D.; Heeney, Martin

    2018-01-01

    Molecular doping is an important strategy to improve the charge transport properties of organic semiconductors in various electronic devices. Compared to p-type dopants, the development of n-type dopants is especially challenging due to poor dopant stability against atmospheric conditions. In this article, we report the n-doping of the milestone naphthalenediimide-based conjugated polymer P(NDI2OD-T2) in organic thin film transistor devices by soluble anion dopants. The addition of the dopants resulted in the formation of stable radical anions in thin films, as confirmed by EPR spectroscopy. By tuning the dopant concentration via simple solution mixing, the transistor parameters could be readily controlled. Hence the contact resistance between the electrodes and the semiconducting polymer could be significantly reduced, which resulted in the transistor behaviour approaching the desirable gate voltage-independent model. Reduced hysteresis was also observed, thanks to the trap filling by the dopant. Under optimal doping concentrations the channel on-current was increased several fold whilst the on/off ratio was simultaneously increased by around one order of magnitude. Hence doping with soluble organic salts appears to be a promising route to improve the charge transport properties of n-type organic semiconductors.

  18. The Integration and Applications of Organic Thin Film Transistors and Ferroelectric Polymers

    Hsu, Yu-Jen

    Organic thin film transistors and ferroelectric polymer (polyvinylidene difluoride) sheet material are integrated to form various sensors for stress/strain, acoustic wave, and Infrared (heat) sensing applications. Different from silicon-based transistors, organic thin film transistors can be fabricated and processed in room-temperature and integrated with a variety of substrates. On the other hand, polyvinylidene difluoride (PVDF) exhibits ferroelectric properties that are highly useful for sensor applications. The wide frequency bandwidth (0.001 Hz to 10 GHz), vast dynamic range (100n to 10M psi), and high elastic compliance (up to 3 percent) make PVDF a more suitable candidate over ceramic piezoelectric materials for thin and flexible sensor applications. However, the low Curie temperature may have impeded its integration with silicon technology. Organic thin film transistors, however, do not have the limitation of processing temperature, hence can serve as transimpedance amplifiers to convert the charge signal generated by PVDF into current signal that are more measurable and less affected by any downstream parasitics. Piezoelectric sensors are useful for a range of applications, but passive arrays suffer from crosstalk and signal attenuation which have complicated the development of array-based PVDF sensors. We have used organic field effect transistors, which are compatible with the low Curie temperature of a flexible piezoelectric polymer,PVDF, to monolithically fabricate transimpedance amplifiers directly on the sensor surface and convert the piezoelectric charge signal into a current signal which can be detected even in the presence of parasitic capacitances. The device couples the voltage generated by the PVDF film under strain into the gate of the organic thin film transistors (OFET) using an arrangement that allows the full piezoelectric voltage to couple to the channel, while also increasing the charge retention time. A bipolar detector is created by

  19. Hydrothermal carbonization of abundant renewable natural organic chemicals for high-performance supercapacitor electrodes

    Wei, Lu [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States); School of Materials Science and Engineering, Northwestern Polytechnical University, Xi' an, Shaanxi 710072 (China); Sevilla, Marta [Instituto Nacional del Carbon (CSIC), P.O. Box 73, Oviedo 33080 (Spain); School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom); Fuertes, Antonio B. [Instituto Nacional del Carbon (CSIC), P.O. Box 73, Oviedo 33080 (Spain); Mokaya, Robert [School of Chemistry, University of Nottingham, University Park, Nottingham, NG7 2RD (United Kingdom); Yushin, Gleb [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

    2011-05-15

    Cellulose, potato starch, and eucalyptus wood saw dust were transformed into porous carbons with micropore surface areas of up to 2387 m{sup 2}/g. The specific capacitance of the produced carbons approaches 236 F/g (100 F/cc) when measured in a symmetric configuration in an organic electrolyte. Charge-discharge tests showed excellent capacitance retention with capacitance of up to 175 F/g at an ultra-high current density of 20 A/g. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  20. Materials Science of Electrodes and Interfaces for High-Performance Organic Photovoltaics

    Marks, Tobin [Northwestern Univ., Evanston, IL (United States)

    2016-11-18

    The science of organic photovoltaic (OPV) cells has made dramatic advances over the past three years with power conversion efficiencies (PCEs) now reaching ~12%. The upper PCE limit of light-to-electrical power conversion for single-junction OPVs as predicted by theory is ~23%. With further basic research, the vision of such devices, composed of non-toxic, earth-abundant, readily easily processed materials replacing/supplementing current-generation inorganic solar cells may become a reality. Organic cells offer potentially low-cost, roll-to-roll manufacturable, and durable solar power for diverse in-door and out-door applications. Importantly, further gains in efficiency and durability, to that competitive with inorganic PVs, will require fundamental, understanding-based advances in transparent electrode and interfacial materials science and engineering. This team-science research effort brought together an experienced and highly collaborative interdisciplinary group with expertise in hard and soft matter materials chemistry, materials electronic structure theory, solar cell fabrication and characterization, microstructure characterization, and low temperature materials processing. We addressed in unconventional ways critical electrode-interfacial issues underlying OPV performance -- controlling band offsets between transparent electrodes and organic active-materials, addressing current loss/leakage phenomena at interfaces, and new techniques in cost-effective low temperature and large area cell fabrication. The research foci were: 1) Theory-guided design and synthesis of advanced crystalline and amorphous transparent conducting oxide (TCO) layers which test our basic understanding of TCO structure-transport property relationships, and have high conductivity, transparency, and tunable work functions but without (or minimizing) the dependence on indium. 2) Development of theory-based understanding of optimum configurations for the interfaces between oxide electrodes

  1. Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

    Kanimozhi, Catherine K.

    2012-10-10

    In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ∼1100 nm) and field-effect electron mobility values of >1 cm 2 V -1 s -1. The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics. © 2012 American Chemical Society.

  2. Field-effect transistors based on self-organized molecular nanostripes

    Cavallini, M.; Stoliare, P.; Moulin, J.-F.

    2005-01-01

    Charge transport properties in organic semiconductors depend strongly on molecular order. Here we demonstrate field-effect transistors where drain current flows through a precisely defined array of nanostripes made of crystalline and highly ordered molecules. The molecular stripes are fabricated ...... by the menisci once the critical concentration is reached and self-organizes into molecularly ordered stripes 100-200 nm wide and a few monolayers high. The charge mobility measured along the stripes is 2 orders of magnitude larger than the values measured for spin-coated thin films....... across the channel of the transistor by a stamp-assisted deposition of the molecular semiconductors from a solution. As the solvent evaporates, the capillary forces drive the solution to form menisci under the stamp protrusions. The solute precipitates only in the regions where the solution is confined...

  3. Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces.

    Ward, Jeremy W; Smith, Hannah L; Zeidell, Andrew; Diemer, Peter J; Baker, Stephen R; Lee, Hyunsu; Payne, Marcia M; Anthony, John E; Guthold, Martin; Jurchescu, Oana D

    2017-05-31

    Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

  4. Using white noise to gate organic transistors for dynamic monitoring of cultured cell layers.

    Rivnay, Jonathan; Leleux, Pierre; Hama, Adel; Ramuz, Marc; Huerta, Miriam; Malliaras, George G; Owens, Roisin M

    2015-06-26

    Impedance sensing of biological systems allows for monitoring of cell and tissue properties, including cell-substrate attachment, layer confluence, and the "tightness" of an epithelial tissue. These properties are critical for electrical detection of tissue health and viability in applications such as toxicological screening. Organic transistors based on conducting polymers offer a promising route to efficiently transduce ionic currents to attain high quality impedance spectra, but collection of complete impedance spectra can be time consuming (minutes). By applying uniform white noise at the gate of an organic electrochemical transistor (OECT), and measuring the resulting current noise, we are able to dynamically monitor the impedance and thus integrity of cultured epithelial monolayers. We show that noise sourcing can be used to track rapid monolayer disruption due to compounds which interfere with dynamic polymerization events crucial for maintaining cytoskeletal integrity, and to resolve sub-second alterations to the monolayer integrity.

  5. Improved organic thin-film transistor performance using novel self-assembled monolayers

    McDowell, M.; Hill, I. G.; McDermott, J. E.; Bernasek, S. L.; Schwartz, J.

    2006-02-01

    Pentacene-based organic thin-film transistors have been fabricated using a phosphonate-linked anthracene self-assembled monolayer as a buffer between the silicon dioxide gate dielectric and the active pentacene channel region. Vast improvements in the subthreshold slope and threshold voltage are observed compared to control devices fabricated without the buffer. Both observations are consistent with a greatly reduced density of charge trapping states at the semiconductor-dielectric interface effected by introduction of the self-assembled monolayer.

  6. Nonlinear Transport in Organic Thin Film Transistors with Soluble Small Molecule Semiconductor.

    Kim, Hyeok; Song, Dong-Seok; Kwon, Jin-Hyuk; Jung, Ji-Hoon; Kim, Do-Kyung; Kim, SeonMin; Kang, In Man; Park, Jonghoo; Tae, Heung-Sik; Battaglini, Nicolas; Lang, Philippe; Horowitz, Gilles; Bae, Jin-Hyuk

    2016-03-01

    Nonlinear transport is intensively explained through Poole-Frenkel (PF) transport mechanism in organic thin film transistors with solution-processed small molecules, which is, 6,13-bis(triisopropylsilylethynyl) (TIPS) pentacene. We outline a detailed electrical study that identifies the source to drain field dependent mobility. Devices with diverse channel lengths enable the extensive exhibition of field dependent mobility due to thermal activation of carriers among traps.

  7. Organic-inorganic field effect transistor with SnI-based perovskite channel layer using vapor phase deposition technique

    Matsushima, Toshinori; Yasuda, Takeshi; Fujita, Katsuhiko; Tsutsui, Tetsuo

    2003-11-01

    High field-effect hole mobility of (formula available in paper)and threshold voltage is -3.2 V) in organic-inorganic layered perovskite film (formula available in paper)prepared by a vapor phase deposition technique have been demonstrated through the octadecyltrichlorosilane treatment of substrate. Previously, the (formula available in paper)films prepared on the octadecyltrichlorosilane-covered substrates using a vapor evaporation showed not only intense exciton absorption and photoluminescence in the optical spectroscopy but also excellent crystallinity and large grain structure in X-ray and atomic force microscopic studies. Especially, the (formula available in paper)structure in the region below few nm closed to the surface of octadecyltrichlorosilane monolayer was drastically improved in comparison with that on the non-covered substrate. Though our initial (formula available in paper)films via a same sequence of preparation of (formula available in paper)and octadecyltrichlorosilane monolayer did not show the field-effect properties because of a lack of spectral, structural, and morphological features. The unformation of favorable (formula available in paper)structure in the very thin region, that is very important for the field-effect transistors to transport electrons or holes, closed to the surface of non-covered (formula available in paper)dielectric layer was also one of the problems for no observation of them. By adding further optimization and development, such as deposition rate of perovskite, substrate heating during deposition, and tuning device architecture, with hydrophobic treatment, the vacuum-deposited (formula available in paper)have achieved above-described high performance in organic-inorganic hybrid transistors.

  8. Ion sensors based on novel fiber organic electrochemical transistors for lead ion detection.

    Wang, Yuedan; Zhou, Zhou; Qing, Xing; Zhong, Weibing; Liu, Qiongzhen; Wang, Wenwen; Li, Mufang; Liu, Ke; Wang, Dong

    2016-08-01

    Fiber organic electrochemical transistors (FECTs) based on polypyrrole and nanofibers have been prepared for the first time. FECTs exhibited excellent electrical performances, on/off ratios up to 10(4) and low applied voltages below 2 V. The ion sensitivity behavior of the fiber organic electrochemical transistors was investigated. It exhibited that the transfer curve of FECTs shifted to lower gate voltage with increasing cations concentration, the sensitivity reached to 446 μA/dec in the 10(-5)-10(-2) M Pb(2+) concentration range. The ion selective properties of the FECTs have also been systematically studied for the detection of potassium, calcium, aluminum, and lead ions. The devices with different cations showed great difference in response curves. It was suitable for selectively monitoring Pb(2+) with respect to other cations. The results indicated FECTs were very effective for electrochemical sensing of lead ion, which opened a promising perspective for wearable electronics in healthcare and biological application. Graphical Abstract The schematic diagram of fiber organic electrochemical transistors based on polypyrrole and nanofibers for ion sensing.

  9. Organic-Inorganic Hybrid Interfacial Layer for High-Performance Planar Perovskite Solar Cells.

    Yang, Hao; Cong, Shan; Lou, Yanhui; Han, Liang; Zhao, Jie; Sun, Yinghui; Zou, Guifu

    2017-09-20

    4,7-Diphenyl-1,10-phenanthroline (Bphen) is an efficient electron transport and hole blocking material in organic photoelectric devices. Here, we report cesium carbonate (Cs 2 CO 3 ) doped Bphen as cathode interfacial layer in CH 3 NH 3 PbI 3-x Cl x based planar perovskite solar cells (PSCs). Investigation finds that introducing Cs 2 CO 3 suppresses the crystallization of Bphen and benefits a smooth interface contact between the perovskite and electrode, resulting in the decrease in carrier recombination and the perovskite degradation. In addition, the matching energy level of Bphen film in the PSCs effectively blocks the holes diffusion to cathode. The resultant power conversion efficiency (PCE) achieves as high as 17.03% in comparison with 12.67% of reference device without doping. Besides, experiments also demonstrate the stability of PSCs have large improvement because the suppressed crystallization of Bphen by doping Cs 2 CO 3 as a superior barrier layer blocks the Ag atom and surrounding moisture access to the vulnerable perovskite layer.

  10. High performance hydrogen storage from Be-BTB metal-organic framework at room temperature.

    Lim, Wei-Xian; Thornton, Aaron W; Hill, Anita J; Cox, Barry J; Hill, James M; Hill, Matthew R

    2013-07-09

    The metal-organic framework beryllium benzene tribenzoate (Be-BTB) has recently been reported to have one of the highest gravimetric hydrogen uptakes at room temperature. Storage at room temperature is one of the key requirements for the practical viability of hydrogen-powered vehicles. Be-BTB has an exceptional 298 K storage capacity of 2.3 wt % hydrogen. This result is surprising given that the low adsorption enthalpy of 5.5 kJ mol(-1). In this work, a combination of atomistic simulation and continuum modeling reveals that the beryllium rings contribute strongly to the hydrogen interaction with the framework. These simulations are extended with a thermodynamic energy optimization (TEO) model to compare the performance of Be-BTB to a compressed H2 tank and benchmark materials MOF-5 and MOF-177 in a MOF-based fuel cell. Our investigation shows that none of the MOF-filled tanks satisfy the United States Department of Energy (DOE) storage targets within the required operating temperatures and pressures. However, the Be-BTB tank delivers the most energy per volume and mass compared to the other material-based storage tanks. The pore size and the framework mass are shown to be contributing factors responsible for the superior room temperature hydrogen adsorption of Be-BTB.

  11. Improved interface control for high-performance graphene-based organic solar cells

    Jung, Seungon; Lee, Junghyun; Choi, Yunseong; Myeon Lee, Sang; Yang, Changduk; Park, Hyesung

    2017-12-01

    The demand for high-efficiency flexible optoelectronic devices is ever-increasing because next-generation electronic devices that comprise portable or wearable electronic systems are set to play an important role. Graphene has received extensive attention as it is considered to be a promising candidate material for transparent flexible electrode platforms owing to its outstanding electrical, optical, and physical properties. Despite these properties, the inert and hydrophobic nature of graphene surfaces renders it difficult to use in optoelectronic devices. In particular, commonly used charge transporting layer (CTL) materials for organic solar cells (OSCs) cannot uniformly coat a graphene surface, which leads to such devices failing. Herein, this paper proposes an approach that will enable CTL materials to completely cover a graphene electrode; this is done with the assistance of commonly accessible polar solvents. These are successfully applied to various configurations of OSCs, with power conversion efficiencies of 8.17% for graphene electrode-based c-OSCs (OSCs with conventional structures), 8.38% for i-OSCs (OSCs with inverted structures), and 7.53% for flexible solar cells. The proposed approach is expected to bring about significant advances for efficiency enhancements in graphene-based optoelectronic devices, and it is expected that it will open up new possibilities for flexible optoelectronic systems.

  12. Black phosphorus induced photo-doping for high-performance organic-silicon heterojunction photovoltaics

    Zhouhui Xia; Pengfei Li; Yuqiang Liu; Tao Song; Qiaoliang Bao; Shuit-Tong Lee; Baoquan Sun

    2017-01-01

    In conventional crystalline silicon (Si) homojunction solar cells,a strategy of doping by transporting phosphorus or boron impurities into Si is commonly used to build Ohmic contacts at rear electrodes.However,this technique involves an energy intensive,high temperature (~ 800 ℃) process and toxic doping materials.Black phosphorus (BP) is a two-dimensional,narrow bandgap semiconductor with high carrier mobility that exhibits broad light harvesting properties.Here,we place BP:zinc oxide (ZnO) composite films between Si and aluminum (Al) to improve their contact.Once the BP harvests photons with energies below 1.1 eV from the crystalline Si,the ZnO carrier concentration increases dramatically due to charge injection.This photo-induced doping results in a high carrier concentration in the ZnO film,mimicking the modulated doping technique used in semiconductor heterojunctions.We show that photo-induced carriers dramatically increase the conductivities of the BP-modified ZnO films,thus reducing the contact resistance between Si and Al.A photovoltaic power conversion efficiency of 15.2% is achieved in organic-Si heterojunction solar cells that use a ZnO:BP layer.These findings demonstrate an effective way of improving Si/metal contact via a simple,low temperature process.

  13. High-performance NiO/Ag/NiO transparent electrodes for flexible organic photovoltaic cells.

    Xue, Zhichao; Liu, Xingyuan; Zhang, Nan; Chen, Hong; Zheng, Xuanming; Wang, Haiyu; Guo, Xiaoyang

    2014-09-24

    Transparent electrodes with a dielectric-metal-dielectric (DMD) structure can be implemented in a simple manufacturing process and have good optical and electrical properties. In this study, nickel oxide (NiO) is introduced into the DMD structure as a more appropriate dielectric material that has a high conduction band for electron blocking and a low valence band for efficient hole transport. The indium-free NiO/Ag/NiO (NAN) transparent electrode exhibits an adjustable high transmittance of ∼82% combined with a low sheet resistance of ∼7.6 Ω·s·q(-1) and a work function of 5.3 eV after UVO treatment. The NAN electrode shows excellent surface morphology and good thermal, humidity, and environmental stabilities. Only a small change in sheet resistance can be found after NAN electrode is preserved in air for 1 year. The power conversion efficiencies of organic photovoltaic cells with NAN electrodes deposited on glass and polyethylene terephthalate (PET) substrates are 6.07 and 5.55%, respectively, which are competitive with those of indium tin oxide (ITO)-based devices. Good photoelectric properties, the low-cost material, and the room-temperature deposition process imply that NAN electrode is a striking candidate for low-cost and flexible transparent electrode for efficient flexible optoelectronic devices.

  14. High-performance organic light-emitting diodes comprising ultrastable glass layers

    Rodríguez-Viejo, Javier

    2018-01-01

    Organic light-emitting diodes (OLEDs) are one of the key solid-state light sources for various applications including small and large displays, automotive lighting, solid-state lighting, and signage. For any given commercial application, OLEDs need to perform at their best, which is judged by their device efficiency and operational stability. We present OLEDs that comprise functional layers fabricated as ultrastable glasses, which represent the thermodynamically most favorable and, thus, stable molecular conformation achievable nowadays in disordered solids. For both external quantum efficiencies and LT70 lifetimes, OLEDs with four different phosphorescent emitters show >15% enhancements over their respective reference devices. The only difference to the latter is the growth condition used for ultrastable glass layers that is optimal at about 85% of the materials’ glass transition temperature. These improvements are achieved through neither material refinements nor device architecture optimization, suggesting a general applicability of this concept to maximize the OLED performance, no matter which specific materials are used. PMID:29806029

  15. Organic High Electron Mobility Transistors Realized by 2D Electron Gas.

    Zhang, Panlong; Wang, Haibo; Yan, Donghang

    2017-09-01

    A key breakthrough in inorganic modern electronics is the energy-band engineering that plays important role to improve device performance or develop novel functional devices. A typical application is high electron mobility transistors (HEMTs), which utilizes 2D electron gas (2DEG) as transport channel and exhibits very high electron mobility over traditional field-effect transistors (FETs). Recently, organic electronics have made very rapid progress and the band transport model is demonstrated to be more suitable for explaining carrier behavior in high-mobility crystalline organic materials. Therefore, there emerges a chance for applying energy-band engineering in organic semiconductors to tailor their optoelectronic properties. Here, the idea of energy-band engineering is introduced and a novel device configuration is constructed, i.e., using quantum well structures as active layers in organic FETs, to realize organic 2DEG. Under the control of gate voltage, electron carriers are accumulated and confined at quantized energy levels, and show efficient 2D transport. The electron mobility is up to 10 cm 2 V -1 s -1 , and the operation mechanisms of organic HEMTs are also argued. Our results demonstrate the validity of tailoring optoelectronic properties of organic semiconductors by energy-band engineering, offering a promising way for the step forward of organic electronics. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Identifying Sources of Volatile Organic Compounds and Aldehydes in a High Performance Building

    Ortiz, Anna C.; Russell, Marion; Lee, Wen-Yee; Apte, Michael; Maddalena, Randy

    2010-01-01

    The developers of the Paharpur Business Center (PBC) and Software Technology Incubator Park in New Delhi, India offer an environmentally sustainable building with a strong emphasis on energy conservation, waste minimization and superior indoor air quality (IAQ). To achieve the IAQ goal, the building utilizes a series of air cleaning technologies for treating the air entering the building. These technologies include an initial water wash followed by ultraviolet light treatment and biofiltration using a greenhouse located on the roof and numerous plants distributed throughout the building. Even with the extensive treatment of makeup air and room air in the PBC, a recent study found that the concentrations of common volatile organic compounds and aldehydes appear to rise incrementally as the air passes through the building from the supply to the exhaust. This finding highlights the need to consider the minimization of chemical sources in buildings in combination with the use of advanced air cleaning technologies when seeking to achieve superior IAQ. The goal of this project was to identify potential source materials for indoor chemicals in the PBC. Samples of building materials, including wood paneling (polished and unpolished), drywall, and plastic from a hydroponic drum that was part of the air cleaning system, were collected from the building for testing. All materials were collected from the PBC building and shipped to the Lawrence Berkeley National Laboratory (LBNL) for testing. The materials were pre-conditioned for two different time periods before measuring material and chemical specific emission factors for a range of VOCs and Aldehydes. Of the six materials tested, we found that the highest emitter of formaldehyde was new plywood paneling. Although polish and paint contribute to some VOC emissions, the main influence of the polish was in altering the capacity of the surface to accumulate formaldehyde. Neither the new nor aged polish contributed significantly

  17. Identifying Sources of Volatile Organic Compounds and Aldehydes in a High Performance Building

    Ortiz, Anna C.; Russell, Marion; Lee, Wen-Yee; Apte, Michael; Maddalena, Randy

    2010-09-20

    The developers of the Paharpur Business Center (PBC) and Software Technology Incubator Park in New Delhi, India offer an environmentally sustainable building with a strong emphasis on energy conservation, waste minimization and superior indoor air quality (IAQ). To achieve the IAQ goal, the building utilizes a series of air cleaning technologies for treating the air entering the building. These technologies include an initial water wash followed by ultraviolet light treatment and biolfiltration using a greenhouse located on the roof and numerous plants distributed throughout the building. Even with the extensive treatment of makeup air and room air in the PBC, a recent study found that the concentrations of common volatile organic compounds and aldehydes appear to rise incrementally as the air passes through the building from the supply to the exhaust. This finding highlights the need to consider the minimization of chemical sources in buildings in combination with the use of advanced air cleaning technologies when seeking to achieve superior IAQ. The goal of this project was to identify potential source materials for indoor chemicals in the PBC. Samples of building materials, including wood paneling (polished and unpolished), drywall, and plastic from a hydroponic drum that was part of the air cleaning system, were collected from the building for testing. All materials were collected from the PBC building and shipped to the Lawrence Berkeley National Laboratory (LBNL) for testing. The materials were pre-conditioned for two different time periods before measuring material and chemical specific emission factors for a range of VOCs and Aldehydes. Of the six materials tested, we found that the highest emitter of formaldehyde was new plywood paneling. Although polish and paint contribute to some VOC emissions, the main influence of the polish was in altering the capacity of the surface to accumulate formaldehyde. Neither the new nor aged polish contributed

  18. Self-Aligned Metal Electrodes in Fully Roll-to-Roll Processed Organic Transistors

    Marja Vilkman

    2016-01-01

    Full Text Available We demonstrate the production of organic bottom gate transistors with self-aligned electrodes, using only continuous roll-to-roll (R2R techniques. The self-alignment allows accurate <5 µm layer-to-layer registration, which is usually a challenge in high-speed R2R environments as the standard registration methods are limited to the millimeter range—or, at best, to tens of µm if online cameras and automatic web control are utilized. The improved registration enables minimizing the overlap between the source/drain electrodes and the gate electrode, which is essential for minimizing the parasitic capacitance. The complete process is a combination of several techniques, including evaporation, reverse gravure, flexography, lift-off, UV exposure and development methods—all transferred to a continuous R2R pilot line. Altogether, approximately 80 meters of devices consisting of thousands of transistors were manufactured in a roll-to-roll fashion. Finally, a cost analysis is presented in order to ascertain the main costs and to predict whether the process would be feasible for the industrial production of organic transistors.

  19. Removing the current-limit of vertical organic field effect transistors

    Sheleg, Gil; Greenman, Michael; Lussem, Bjorn; Tessler, Nir

    2017-11-01

    The reported Vertical Organic Field Effect Transistors (VOFETs) show either superior current and switching speeds or well-behaved transistor performance, especially saturation in the output characteristics. Through the study of the relationship between the device architecture or dimensions and the device performance, we find that achieving a saturation regime in the output characteristics requires that the device operates in the injection limited regime. In current structures, the existence of the injection limited regime depends on the source's injection barrier as well as on the buried semiconductor layer thickness. To overcome the injection limit imposed by the necessity of injection barrier, we suggest a new architecture to realize VOFETs. This architecture shows better gate control and is independent of the injection barrier at the source, thus allowing for several A cm-2 for a semiconductor having a mobility value of 0.1 cm2 V-1 s-1.

  20. Accurate characterization of organic thin film transistors in the presence of gate leakage current

    Vinay K. Singh

    2011-12-01

    Full Text Available The presence of gate leakage through polymer dielectric in organic thin film transistors (OTFT prevents accurate estimation of transistor characteristics especially in subthreshold regime. To mitigate the impact of gate leakage on transfer characteristics and allow accurate estimation of mobility, subthreshold slope and on/off current ratio, a measurement technique involving simultaneous sweep of both gate and drain voltages is proposed. Two dimensional numerical device simulation is used to illustrate the validity of the proposed technique. Experimental results obtained with Pentacene/PMMA OTFT with significant gate leakage show a low on/off current ratio of ∼ 102 and subthreshold is 10 V/decade obtained using conventional measurement technique. The proposed technique reveals that channel on/off current ratio is more than two orders of magnitude higher at ∼104 and subthreshold slope is 4.5 V/decade.

  1. Understanding mobility degeneration mechanism in organic thin-film transistors (OTFT)

    Wang, Wei; Wang, Long; Xu, Guangwei; Gao, Nan; Wang, Lingfei; Ji, Zhuoyu; Lu, Congyan; Lu, Nianduan; Li, Ling; Liu, Miwng

    2017-08-01

    Mobility degradation at high gate bias is often observed in organic thin film transistors. We propose a mechanism for this confusing phenomenon, based on the percolation theory with the presence of disordered energy landscape with an exponential density of states. Within a simple model we show how the surface states at insulator/organic interface trap a portion of channel carriers, and result in decrease of mobility as well as source/drain current with gate voltage. Depending on the competition between the carrier accumulation and surface trapping effect, two different carrier density dependences of mobility are obtained, in excellent agreement with experiment data.

  2. Integrated Materials Design of Organic Semiconductors for Field-Effect Transistors

    Mei, Jianguo

    2013-05-08

    The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm2/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications. © 2013 American Chemical Society.

  3. Integrated materials design of organic semiconductors for field-effect transistors.

    Mei, Jianguo; Diao, Ying; Appleton, Anthony L; Fang, Lei; Bao, Zhenan

    2013-05-08

    The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm(2)/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.

  4. Impact of self-assembled monolayer on low frequency noise of organic thin film transistors

    Ke Lin; Dolmanan, Surani Bin; Shen Lu; Vijila, Chellappan; Chua, Soo Jin; Png, R.-Q.; Chia, P.-J.; Chua, L.-L.; Ho, Peter K-H.

    2008-01-01

    Bottom-contact organic field-effect transistors (FETs) based on regioregular poly(3-hexylthiophene) were fabricated with different surface treatments and were evaluated using a low frequency noise (LFN) spectroscopy. The oxygen-plasma (OP) treated device shows the highest mobility with the lowest current fluctuation. Octadecyltrichlorosilane and perfluorodecyldimetylchlorosilane treated device gives a higher noise compared with the OP treated device. Hexamethyldisilazane treated devices show the highest noise but the lowest mobility. The LFN results are correlated with organic FET device mobility and stability, proved by channel material crystallinity and degree of dislocations analysis. LFN measurement provides a nondisruptive and direct methodology to characterize device performance

  5. Keys to successful organ procurement: An experience-based review of clinical practices at a high-performing health-care organization

    Wojda, Thomas R.; Stawicki, Stanislaw P.; Yandle, Kathy P.; Bleil, Maria; Axelband, Jennifer; Wilde-Onia, Rebecca; Thomas, Peter G.; Cipolla, James; Hoff, William S.; Shultz, Jill

    2017-01-01

    Organ procurement (OP) from donors after brain death and circulatory death represents the primary source of transplanted organs. Despite favorable laws and regulations, OP continues to face challenges for a number of reasons, including institutional, personal, and societal barriers. This focused review presents some of the key components of a successful OP program at a large, high-performing regional health network. This review focuses on effective team approaches, aggressive resuscitative strategies, optimal communication, family support, and community outreach efforts. PMID:28660162

  6. High Performance Organic Semiconductors

    2012-07-31

    induce dewetting of the solutions (Fig. 7A, black region). The obtained crystals are well-aligned and separated with distinct areas of C60 and TIPS...ozone and becomes solvent- dewetting . As the solvent evaporates slowly, the crystals of C60 and TIPS-pentacene nucleate near the contact lines of the

  7. High Performance Electronics on Flexible Silicon

    Sevilla, Galo T.

    2016-09-01

    Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

  8. Enhanced photoresponsivity in organic field effect transistors by silver nanoparticles

    Linnet, Jes; Runge Walther, Anders; Albrektsen, Ole

    2017-01-01

    Organic semiconductors (OSC) such as thiophene-based oligomers exhibit useful electronic and optical properties making them applicable in photo-sensing devices. Generally, thiophene-based photodetectors exhibit a decent responsivity with a spectral sensitivity determined by the OSC's absorption...... and shape of the fabricated silver NPs, a spectrally broad enhancement is predicted, which is in agreement with the experimental results. The results show that the photoresponsivity is dominantly enhanced in a spectral region of low OSC absorption coinciding with the localized surface plasmon resonances...

  9. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  10. Vertical Phase Separation in Small Molecule:Polymer Blend Organic Thin Film Transistors Can Be Dynamically Controlled

    Zhao, Kui

    2016-02-03

    © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. Blending of small-molecule organic semiconductors (OSCs) with amorphous polymers is known to yield high performance organic thin film transistors (OTFTs). Vertical stratification of the OSC and polymer binder into well-defined layers is crucial in such systems and their vertical order determines whether the coating is compatible with a top and/or a bottom gate OTFT configuration. Here, we investigate the formation of blends prepared via spin-coating in conditions which yield bilayer and trilayer stratifications. We use a combination of in situ experimental and computational tools to study the competing effects of formulation thermodynamics and process kinetics in mediating the final vertical stratification. It is shown that trilayer stratification (OSC/polymer/OSC) is the thermodynamically favored configuration and that formation of the buried OSC layer can be kinetically inhibited in certain conditions of spin-coating, resulting in a bilayer stack instead. The analysis reveals here that preferential loss of the OSC, combined with early aggregation of the polymer phase due to rapid drying, inhibit the formation of the buried OSC layer. The fluid dynamics and drying kinetics are then moderated during spin-coating to promote trilayer stratification with a high quality buried OSC layer which yields unusually high mobility >2 cm2 V-1 s-1 in the bottom-gate top-contact configuration.

  11. 3.4-Inch Quarter High Definition Flexible Active Matrix Organic Light Emitting Display with Oxide Thin Film Transistor

    Hatano, Kaoru; Chida, Akihiro; Okano, Tatsuya; Sugisawa, Nozomu; Inoue, Tatsunori; Seo, Satoshi; Suzuki, Kunihiko; Oikawa, Yoshiaki; Miyake, Hiroyuki; Koyama, Jun; Yamazaki, Shunpei; Eguchi, Shingo; Katayama, Masahiro; Sakakura, Masayuki

    2011-03-01

    In this paper, we report a 3.4-in. flexible active matrix organic light emitting display (AMOLED) display with remarkably high definition (quarter high definition: QHD) in which oxide thin film transistors (TFTs) are used. We have developed a transfer technology in which a TFT array formed on a glass substrate is separated from the substrate by physical force and then attached to a flexible plastic substrate. Unlike a normal process in which a TFT array is directly fabricated on a thin plastic substrate, our transfer technology permits a high integration of high performance TFTs, such as low-temperature polycrystalline silicon TFTs (LTPS TFTs) and oxide TFTs, on a plastic substrate, because a flat, rigid, and thermally-stable glass substrate can be used in the TFT fabrication process in our transfer technology. As a result, this technology realized an oxide TFT array for an AMOLED on a plastic substrate. Furthermore, in order to achieve a high-definition AMOLED, color filters were incorporated in the TFT array and a white organic light-emitting diode (OLED) was combined. One of the features of this device is that the whole body of the device can be bent freely because a source driver and a gate driver can be integrated on the substrate due to the high mobility of an oxide TFT. This feature means “true” flexibility.

  12. Low dielectric constant-based organic field-effect transistors and metal-insulator-semiconductor capacitors

    Ukah, Ndubuisi Benjamin

    This thesis describes a study of PFB and pentacene-based organic field-effect transistors (OFET) and metal-insulator-semiconductor (MIS) capacitors with low dielectric constant (k) poly(methyl methacrylate) (PMMA), poly(4-vinyl phenol) (PVP) and cross-linked PVP (c-PVP) gate dielectrics. A physical method -- matrix assisted pulsed laser evaporation (MAPLE) -- of fabricating all-polymer field-effect transistors and MIS capacitors that circumvents inherent polymer dissolution and solvent-selectivity problems, is demonstrated. Pentacene-based OFETs incorporating PMMA and PVP gate dielectrics usually have high operating voltages related to the thickness of the dielectric layer. Reduced PMMA layer thickness (≤ 70 nm) was obtained by dissolving the PMMA in propylene carbonate (PC). The resulting pentacene-based transistors exhibited very low operating voltage (below -3 V), minimal hysteresis in their transfer characteristics, and decent electrical performance. Also low voltage (within -2 V) operation using thin (≤ 80 nm) low-k and hydrophilic PVP and c-PVP dielectric layers obtained via dissolution in high dipole moment and high-k solvents -- PC and dimethyl sulfoxide (DMSO), is demonstrated to be a robust means of achieving improved electrical characteristics and high operational stability in OFETs incorporating PVP and c-PVP dielectrics.

  13. Mobility overestimation due to gated contacts in organic field-effect transistors

    Bittle, Emily G.; Basham, James I.; Jackson, Thomas N.; Jurchescu, Oana D.; Gundlach, David J.

    2016-01-01

    Parameters used to describe the electrical properties of organic field-effect transistors, such as mobility and threshold voltage, are commonly extracted from measured current–voltage characteristics and interpreted by using the classical metal oxide–semiconductor field-effect transistor model. However, in recent reports of devices with ultra-high mobility (>40 cm2 V−1 s−1), the device characteristics deviate from this idealized model and show an abrupt turn-on in the drain current when measured as a function of gate voltage. In order to investigate this phenomenon, here we report on single crystal rubrene transistors intentionally fabricated to exhibit an abrupt turn-on. We disentangle the channel properties from the contact resistance by using impedance spectroscopy and show that the current in such devices is governed by a gate bias dependence of the contact resistance. As a result, extracted mobility values from d.c. current–voltage characterization are overestimated by one order of magnitude or more. PMID:26961271

  14. Organic thin film transistors using a liquid crystalline palladium phthalocyanine as active layer

    Jiménez Tejada, Juan A.; Lopez-Varo, Pilar; Chaure, Nandu B.; Chambrier, Isabelle; Cammidge, Andrew N.; Cook, Michael J.; Jafari-Fini, Ali; Ray, Asim K.

    2018-03-01

    70 nm thick solution-processed films of a palladium phthalocyanine (PdPc6) derivative bearing eight hexyl (-C6H13) chains at non-peripheral positions have been employed as active layers in the fabrication of bottom-gate bottom-contact organic thin film transistors (OTFTs) deposited on highly doped p-type Si (110) substrates with SiO2 gate dielectric. The dependence of the transistor electrical performance upon the mesophase behavior of the PdPc6 films has been investigated by measuring the output and transfer characteristics of the OTFT having its active layer ex situ vacuum annealed at temperatures between 500 °C and 200 °C. A clear correlation between the annealing temperature and the threshold voltage and carrier mobility of the transistors, and the transition temperatures extracted from the differential scanning calorimetric curves for bulk materials has been established. This direct relation has been obtained by means of a compact electrical model in which the contact effects are taken into account. The precise determination of the contact-voltage drain-current curves allows for obtaining such a relation.

  15. Polarization-induced transport in organic field-effect transistors: the role of ferroelectric dielectrics

    Guha, Suchismita; Laudari, Amrit

    2017-08-01

    The ferroelectric nature of polymer ferroelectrics such as poly(vinylidene fluoride) (PVDF) has been known for over 45 years. However, its role in interfacial transport in organic/polymeric field-effect transistors (FETs) is not that well understood. Dielectrics based on PVDF and its copolymers are a perfect test-bed for conducting transport studies where a systematic tuning of the dielectric constant with temperature may be achieved. The charge transport mechanism in an organic semiconductor often occurs at the intersection of band-like coherent motion and incoherent hopping through localized states. By choosing two small molecule organic semiconductors - pentacene and 6,13 bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) - along with a copolymer of PVDF (PVDF-TrFe) as the dielectric layer, the transistor characteristics are monitored as a function of temperature. A negative coefficient of carrier mobility is observed in TIPS-pentacene upwards of 200 K with the ferroelectric dielectric. In contrast, TIPS-pentacene FETs show an activated transport with non-ferroelectric dielectrics. Pentacene FETs, on the other hand, show a weak temperature dependence of the charge carrier mobility in the ferroelectric phase of PVDF-TrFE, which is attributed to polarization fluctuation driven transport resulting from a coupling of the charge carriers to the surface phonons of the dielectric layer. Further, we show that there is a strong correlation between the nature of traps in the organic semiconductor and interfacial transport in organic FETs, especially in the presence of a ferroelectric dielectric.

  16. Artificial Synapses Based on in-Plane Gate Organic Electrochemical Transistors.

    Qian, Chuan; Sun, Jia; Kong, Ling-An; Gou, Guangyang; Yang, Junliang; He, Jun; Gao, Yongli; Wan, Qing

    2016-10-05

    Realization of biological synapses using electronic devices is regarded as the basic building blocks for neuromorphic engineering and artificial neural network. With the advantages of biocompatibility, low cost, flexibility, and compatible with printing and roll-to-roll processes, the artificial synapse based on organic transistor is of great interest. In this paper, the artificial synapse simulation by ion-gel gated organic field-effect transistors (FETs) with poly(3-hexylthiophene) (P3HT) active channel is demonstrated. Key features of the synaptic behaviors, such as paired-pulse facilitation (PPF), short-term plasticity (STP), self-tuning, the spike logic operation, spatiotemporal dentritic integration, and modulation are successfully mimicked. Furthermore, the interface doping processes of electrolyte ions between the active P3HT layer and ion gels is comprehensively studied for confirming the operating processes underlying the conductivity and excitatory postsynaptic current (EPSC) variations in the organic synaptic devices. This study represents an important step toward building future artificial neuromorphic systems with newly emerged ion gel gated organic synaptic devices.

  17. Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

    Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

    2016-01-01

    The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

  18. 3D hybrid-porous carbon derived from carbonization of metal organic frameworks for high performance supercapacitors

    Bao, Weizhai; Mondal, Anjon Kumar; Xu, Jing; Wang, Chengyin; Su, Dawei; Wang, Guoxiu

    2016-09-01

    We report a rational design and synthesis of 3D hybrid-porous carbon with a hierarchical pore architecture for high performance supercapacitors. It contains micropores (<2 nm diameter) and mesopores (2-4 nm), derived from carbonization of unique porous metal organic frameworks (MOFs). Owning to the synergistic effect of micropores and mesopores, the hybrid-porous carbon has exceptionally high ion-accessible surface area and low ion diffusion resistance, which is desired for supercapacitor applications. When applied as electrode materials in supercapacitors, 3D hybrid-porous carbon demonstrates a specific capacitance of 332 F g-1 at a constant charge/discharge current of 500 mA g-1. The supercapacitors can endure more than 10,000 cycles without degradation of capacitance.

  19. High-performance liquid chromatographic characterization of dissolved organic matter from low-level radioactive waste leachates

    Caron, F.; Elchuk, S.; Walker, Z.H.

    1996-01-01

    Leachates from a waste degradation experiment, containing ∼700-3700 mg C/I of dissolved organic matter (DOM), were analyzed by high-performance liquid chromatography (HPLC) and liquid chromatography (LC), using various separation strategies. Scaling up of the separation scheme to a semi-preparative scale, suitable for hyphenated techniques, was also investigated. Separations with reversed-phase columns suggested that ∼70-93% of the DOM was hydrophilic, and ion-pair chromatography of this fraction showed the presence of several discrete compounds. Labile and non-labile complexes were formed by adding 60 Co radiotracer. Size-exclusion chromatography indicated that the DOM was primarily in the <1000-1500 Da molecular mass range. (author)

  20. Large-area aligned growth of single-crystalline organic nanowire arrays for high-performance photodetectors

    Wu Yiming; Zhang Xiujuan; Pan Huanhuan; Zhang Xiwei; Zhang Yuping; Zhang Xiaozhen; Jie Jiansheng

    2013-01-01

    Due to their extraordinary properties, single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices. However, it remains a critical challenge to assemble organic NWs rationally in an orientation-, dimensionality- and location-controlled manner. Herein, we demonstrate a feasible method for aligned growth of single-crystalline copper phthalocyanine (CuPc) NW arrays with high density, large-area uniformity and perfect crossed alignment by using Au film as a template. The growth process was investigated in detail. The Au film was found to have a critical function in the aligned growth of NWs, but may only serve as the active site for NW nucleation because of the large surface energy, as well as direct the subsequent aligned growth. The as-prepared NWs were then transferred to construct single NW-based photoconductive devices, which demonstrated excellent photoresponse properties with robust stability and reproducibility; the device showed a high switching ratio of ∼180, a fast response speed of ∼100 ms and could stand continuous operation up to 2 h. Importantly, this strategy can be extended to other organic molecules for their synthesis of NW arrays, revealing great potential for use in the construction of large-scale high-performance functional nano-optoelectronic devices. (paper)

  1. Understanding Values in a Large Health Care Organization through Work-Life Narratives of High-Performing Employees

    Karnieli-Miller, Orit; Taylor, Amanda C.; Inui, Thomas S.; Ivy, Steven S.; Frankel, Richard M.

    2011-01-01

    Objective— To understand high-performing frontline employees’ values as reflected in their narratives of day-to-day interactions in a large health care organization. Methods— A total of 150 employees representing various roles within the organization were interviewed and asked to share work-life narratives (WLNs) about value-affirming situations (i.e. situations in which they believed their actions to be fully aligned with their values) and value-challenging situations (i.e. when their actions or the actions of others were not consistent with their values), using methods based on appreciative inquiry. Results— The analysis revealed 10 broad values. Most of the value-affirming WLNs were about the story-teller and team providing care for the patient/family. Half of the value-challenging WLNs were about the story-teller or a patient and barriers created by the organization, supervisor, or physician. Almost half of these focused on “treating others with disrespect/respect”. Only 15% of the value-challenging WLNs contained a resolution reached by the participants, often leaving them describing unresolved and frequently negative feelings. Conclusions— Appreciative inquiry and thematic analysis methods were found to be an effective tool for understanding the important and sometimes competing role personal and institutional values play in day-to-day work. There is remarkable potential in using WLNs as a way to surface and reinforce shared values and, perhaps more importantly, respectfully to identify and discuss conflicting personal and professional values. PMID:23908820

  2. Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

    Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

    2017-10-18

    The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

  3. All solution processed organic thin film transistor-backplane with printing technology for electrophoretic display

    Lee, Myung W.; Song, C.K.

    2012-01-01

    In this study, solution processes were developed for backplane using an organic thin film transistor (OTFT) as a driving device for an electrophoretic display (EPD) panel. The processes covered not only the key device of OTFTs but also interlayer and pixel electrodes. The various materials and printing processes were adopted to achieve the requirements of devices and functioning layers. The performance of OTFT of the backplane was sufficient to drive EPD sheet by producing a mobility of 0.12 cm2/v x sec and on/off current ratio of 10(5).

  4. From Thin Films to Monolayer, A Systematic Approach for BTBT Based Organic Field Effect Transistors

    Yousefi Amin, Atefeh

    2013-01-01

    This work focuses on theoretical and experimental understanding of how low-voltage organic field effect transistors based on BTBT ([1] benzothieno[3,2-b][1]benzothiophene) operate. The focus is in deducing the electrical and interfacial landscape in the device, while using ultra-thin hybrid layers of AlOx/SAM (Self-Assembled Monolayer) as a dielectric. This thesis proposes a systematic study on an optimum solution for facing challenges in molecular and device properties. It first focuses on d...

  5. An analytical expression of electric potential and field of organic thin film transistors

    Pankalla, S; Glesner, M

    2012-01-01

    The two-dimensional electric potential and field of an organic thin-film transistor (OTFT) is derived by conformal mapping using the Schwarz-Christoffel-transformation of the Poisson equation. In this paper we compare this analytical closed-form solution to field simulation results from Silvaco TCAD. Inter alia the potential close to the surface is calculated and we found excellent accordance to the numerical simulations and thus proofed its usability for charge transport calculations. Thus, it is used for calculation of the drain-source-current in the channel.

  6. Dithienocoronenediimide-based copolymers as novel ambipolar semiconductors for organic thin-film transistors.

    Usta, Hakan; Newman, Christopher; Chen, Zhihua; Facchetti, Antonio

    2012-07-17

    A new class of ambipolar donor-acceptor π-conjugated polymers based on a dithienocoronenediimide core is presented. Solution-processed top-gate/bottom-contact thin film transistors (TFTs) exhibit electron and hole mobilities of up to 0.30 cm(2)/V·s and 0.04 cm(2)/V·s, respectively, which are the highest reported to date for an ambipolar polymer in ambient conditions. The polymers presented here are the first examples of coronenediimide-based semiconductors showing high organic TFT performances. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Extended-gate organic field-effect transistor for the detection of histamine in water

    Minamiki, Tsukuru; Minami, Tsuyoshi; Yokoyama, Daisuke; Fukuda, Kenjiro; Kumaki, Daisuke; Tokito, Shizuo

    2015-04-01

    As part of our ongoing research program to develop health care sensors based on organic field-effect transistor (OFET) devices, we have attempted to detect histamine using an extended-gate OFET. Histamine is found in spoiled or decayed fish, and causes foodborne illness known as scombroid food poisoning. The new OFET device possesses an extended gate functionalized by carboxyalkanethiol that can interact with histamine. As a result, we have succeeded in detecting histamine in water through a shift in OFET threshold voltage. This result indicates the potential utility of the designed OFET devices in food freshness sensing.

  8. Poly(vinyl acetate)/clay nanocomposite materials for organic thin film transistor application.

    Park, B J; Sung, J H; Park, J H; Choi, J S; Choi, H J

    2008-05-01

    Nanocomposite materials of poly(vinyl acetate) (PVAc) and organoclay were fabricated, in order to be utilized as dielectric materials of the organic thin film transistor (OTFT). Spin coating condition of the nanocomposite solution was examined considering shear viscosity of the composite materials dissolved in chloroform. Intercalated structure of the PVAc/clay nanocomposites was characterized using both wide-angle X-ray diffraction and TEM. Fracture morphology of the composite film on silicon wafer was also observed by SEM. Dielectric constant (4.15) of the nanocomposite materials shows that the PVAc/clay nanocomposites are applicable for the gate dielectric materials.

  9. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa

    2014-01-01

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized

  10. Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory

    Han, Jinhua; Wang, Wei, E-mail: wwei99@jlu.edu.cn; Ying, Jun; Xie, Wenfa [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012 (China)

    2014-01-06

    An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.

  11. Demonstration of high current carbon nanotube enabled vertical organic field effect transistors at industrially relevant voltages

    McCarthy, Mitchell

    The display market is presently dominated by the active matrix liquid crystal display (LCD). However, the active matrix organic light emitting diode (AMOLED) display is argued to become the successor to the LCD, and is already beginning its way into the market, mainly in small size displays. But, for AMOLED technology to become comparable in market share to LCD, larger size displays must become available at a competitive price with their LCD counterparts. A major issue preventing low-cost large AMOLED displays is the thin-film transistor (TFT) technology. Unlike the voltage driven LCD, the OLEDs in the AMOLED display are current driven. Because of this, the mature amorphous silicon TFT backplane technology used in the LCD must be upgraded to a material possessing a higher mobility. Polycrystalline silicon and transparent oxide TFT technologies are being considered to fill this need. But these technologies bring with them significant manufacturing complexity and cost concerns. Carbon nanotube enabled vertical organic field effect transistors (CN-VFETs) offer a unique solution to this problem (now known as the AMOLED backplane problem). The CN-VFET allows the use of organic semiconductors to be used for the semiconductor layer. Organics are known for their low-cost large area processing compatibility. Although the mobility of the best organics is only comparable to that of amorphous silicon, the CN-VFET makes up for this by orienting the channel vertically, as opposed to horizontally (like in conventional TFTs). This allows the CN-VFET to achieve sub-micron channel lengths without expensive high resolution patterning. Additionally, because the CN-VFET can be easily converted into a light emitting transistor (called the carbon nanotube enabled vertical organic light emitting transistor---CN-VOLET) by essentially stacking an OLED on top of the CN-VFET, more potential benefits can be realized. These potential benefits include, increased aperture ratio, increased OLED

  12. Charge transport behavior of benodithiophene-diketopyrrololpyrrole-based conjugated polymer in organic field-effect transistors

    Park, Jin Kuen [Dept. of Chemistry, Hankuk University of Foreign Studies, Yongin (Korea, Republic of)

    2015-07-15

    Organic optoelectronic devices, such as light-emitting diodes, organic solar cells (OSCs), and organic field effect transistors (OFETs), have emerged due to the development of π-conjugated polymers. Because the delocalized π-framework can significantly reduce the energy gap between the highest-occupied molecular orbital (HOMO) and the lowest-unoccupied molecular orbital (LUMO), their intrinsic optoelectronic properties can be tunable with their conjugation length in terms of average molecular weights and their π-backbone structures. The new type of low bandgap conjugated polymer (P1) has been successively polymerized via a palladium- catalyzed Stille cross-coupling reaction with bis-ethylhexyl BDT and bis-n-decane DPP. With a linear alkyl chain in the DPP units, the intermolecular packing structure was thought to be enhanced by proving the UV–Vis and UPS spectra. In addition, the electronic properties of P1 via field-effect transistors well illustrate the typical p-type semiconducting property without showing the significant improvement by thermal annealing. From a broader perspective, this research indicates that a wider choice of linear alkyl chain length in DPP units and modification of the interface between dielectric and active layers should be sought to further optimize device performance. Hence, progressive works with the strategy presented in this report will be pursued to address the different challenges in attaining target OFET performances.

  13. X-ray imager using solution processed organic transistor arrays and bulk heterojunction photodiodes on thin, flexible plastic substrate

    Gelinck, G.H.; Kumar, A.; Moet, D.; Steen, J.L. van der; Shafique, U.; Malinowski, P.E.; Myny, K.; Rand, B.P.; Simon, M.; Rütten, W.; Douglas, A.; Jorritsma, J.; Heremans, P.L.; Andriessen, H.A.J.M.

    2013-01-01

    We describe the fabrication and characterization of large-area active-matrix X-ray/photodetector array of high quality using organic photodiodes and organic transistors. All layers with the exception of the electrodes are solution processed. Because it is processed on a very thin plastic substrate

  14. Pseudocapacitive organic catechol derivative-functionalized three-dimensional graphene aerogel hybrid electrodes for high-performance supercapacitors

    Choi, Jaewon; Yang, MinHo; Kim, Sung-Kon

    2017-11-01

    Bio-inspired and environmentally friendly chemical functionalization is a successful way to a new class of hybrid electrode materials for applications in energy storage. Quinone (Q)-hydroquinone (QH2) couples, a prototypical example of organic redox systems, provide fast and reversible proton-coupled electron-transfer reactions which lead to increased capacity. To achieve high capacitance and rate performance, constructing three-dimensional (3D) continuous porous structure is highly desirable. Here we report the hybrid electrodes (GA-C) consisting of 3D graphene aerogel (GA) functionalized with organic redox-active material, catechol derivative, for application to high-performance supercapacitors. The catechol derivative is adsorbed on the surface of GA through non-covalent interactions and promotes fast and reversible Q/QH2 faradaic reactions, providing large specific capacitance of 188 F g-1 at a current of 1 A g-1 and a specific energy of ∼25 Wh kg-1 at a specific power of ∼18,000 W kg-1. 3D continuous porous structure of GA electrode facilitates ion and electron transports, resulting in high rate performance (∼140 F g-1 at a current of 10 A g-1).

  15. Unraveling the High Open Circuit Voltage and High Performance of Integrated Perovskite/Organic Bulk-Heterojunction Solar Cells.

    Dong, Shiqi; Liu, Yongsheng; Hong, Ziruo; Yao, Enping; Sun, Pengyu; Meng, Lei; Lin, Yuze; Huang, Jinsong; Li, Gang; Yang, Yang

    2017-08-09

    We have demonstrated high-performance integrated perovskite/bulk-heterojunction (BHJ) solar cells due to the low carrier recombination velocity, high open circuit voltage (V OC ), and increased light absorption ability in near-infrared (NIR) region of integrated devices. In particular, we find that the V OC of the integrated devices is dominated by (or pinned to) the perovskite cells, not the organic photovoltaic cells. A Quasi-Fermi Level Pinning Model was proposed to understand the working mechanism and the origin of the V OC of the integrated perovskite/BHJ solar cell, which following that of the perovskite solar cell and is much higher than that of the low bandgap polymer based organic BHJ solar cell. Evidence for the model was enhanced by examining the charge carrier behavior and photovoltaic behavior of the integrated devices under illumination of monochromatic light-emitting diodes at different characteristic wavelength. This finding shall pave an interesting possibility for integrated photovoltaic devices to harvest low energy photons in NIR region and further improve the current density without sacrificing V OC , thus providing new opportunities and significant implications for future industry applications of this kind of integrated solar cells.

  16. Strategies for Improving the Performance of Sensors Based on Organic Field-Effect Transistors.

    Wu, Xiaohan; Mao, Shun; Chen, Junhong; Huang, Jia

    2018-04-01

    Organic semiconductors (OSCs) have been extensively studied as sensing channel materials in field-effect transistors due to their unique charge transport properties. Stimulation caused by its environmental conditions can readily change the charge-carrier density and mobility of OSCs. Organic field-effect transistors (OFETs) can act as both signal transducers and signal amplifiers, which greatly simplifies the device structure. Over the past decades, various sensors based on OFETs have been developed, including physical sensors, chemical sensors, biosensors, and integrated sensor arrays with advanced functionalities. However, the performance of OFET-based sensors still needs to be improved to meet the requirements from various practical applications, such as high sensitivity, high selectivity, and rapid response speed. Tailoring molecular structures and micro/nanofilm structures of OSCs is a vital strategy for achieving better sensing performance. Modification of the dielectric layer and the semiconductor/dielectric interface is another approach for improving the sensor performance. Moreover, advanced sensory functionalities have been achieved by developing integrated device arrays. Here, a brief review of strategies used for improving the performance of OFET sensors is presented, which is expected to inspire and provide guidance for the design of future OFET sensors for various specific and practical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. In-situ study of pn-heterojunction interface states in organic thin film transistors

    Ye, Rongbin; Ohta, Koji; Baba, Mamoru

    2014-01-01

    In this paper, we have investigated the density of pn-heterojunction interface states by evaluating the threshold voltage shift with in-situ measurement of electrical characteristics of a sandwich fluorinated copper phthalocyanine/pentacene thin film transistor with various thicknesses of pentacene thin films. A threshold voltage (V T ) undergoes a significant shift from + 20.6 to + 0.53 V with increasing the thickness of pentacene. When the thickness of pentacene is more than a critical thickness of 15 nm, V T undergoes hardly any shift. On the other hand, the value of mobility is lightly decreased with increasing the thickness of pentacene due to the effect of the bulk current. Thus the V T shift is attributed to the increase of drain current in the sandwich device. In order to explain the V T shift, a model was assumed in the linear region of thin film transistor operation and the V T shift agrees with a tan −1 function of film thickness. The total charge density (Q 0 ) of 1.53 × 10 −7 C/cm 2 (9.56 × 10 11 electrons or holes/cm 2 ) was obtained. Furthermore, the V T shift and Q 0 could be adjusted by selecting a p-type semiconductor. - Highlights: • A threshold voltage was in-situ measured in an organic sandwich thin film transistor. • Density of pn-heterojunction interface states by evaluating the threshold voltage shift. • The threshold voltage shift attributes to the increase of drain current. • In order to explain the threshold voltage shift, a model was assumed

  18. In-situ study of pn-heterojunction interface states in organic thin film transistors

    Ye, Rongbin, E-mail: ye@iwate-u.ac.jp; Ohta, Koji; Baba, Mamoru

    2014-03-03

    In this paper, we have investigated the density of pn-heterojunction interface states by evaluating the threshold voltage shift with in-situ measurement of electrical characteristics of a sandwich fluorinated copper phthalocyanine/pentacene thin film transistor with various thicknesses of pentacene thin films. A threshold voltage (V{sub T}) undergoes a significant shift from + 20.6 to + 0.53 V with increasing the thickness of pentacene. When the thickness of pentacene is more than a critical thickness of 15 nm, V{sub T} undergoes hardly any shift. On the other hand, the value of mobility is lightly decreased with increasing the thickness of pentacene due to the effect of the bulk current. Thus the V{sub T} shift is attributed to the increase of drain current in the sandwich device. In order to explain the V{sub T} shift, a model was assumed in the linear region of thin film transistor operation and the V{sub T} shift agrees with a tan{sup −1} function of film thickness. The total charge density (Q{sub 0}) of 1.53 × 10{sup −7} C/cm{sup 2} (9.56 × 10{sup 11} electrons or holes/cm{sup 2}) was obtained. Furthermore, the V{sub T} shift and Q{sub 0} could be adjusted by selecting a p-type semiconductor. - Highlights: • A threshold voltage was in-situ measured in an organic sandwich thin film transistor. • Density of pn-heterojunction interface states by evaluating the threshold voltage shift. • The threshold voltage shift attributes to the increase of drain current. • In order to explain the threshold voltage shift, a model was assumed.

  19. The effect of pH and DNA concentration on organic thin-film transistor biosensors

    Khan, Hadayat Ullah

    2012-03-01

    Organic electronics are beginning to attract more interest for biosensor technology as they provide an amenable interface between biology and electronics. Stable biosensor based on electronic detection platform would represent a significant advancement in technology as costs and analysis time would decrease immensely. Organic materials provide a route toward that goal due to their compatibility with electronic applications and biological molecules. In this report, we detail the effects of experimental parameters, such as pH and concentration, toward the selective detection of DNA via surface-bound peptide nucleic acid (PNA) sequences on organic transistor biosensors. The OTFT biosensors are fabricated with thin-films of the organic semiconductor, 5,5′-bis-(7-dodecyl-9H-fluoren-2-yl)-2,2′-bithiophene (DDFTTF), in which they exhibit a stable mobility of 0.2 cm 2 V -1 s -1 in buffer solutions (phosphate-buffer saline, pH 7.4 or sodium acetate, pH 7). Device performance were optimized to minimize the deleterious effects of pH on gate-bias stress such that the sensitivity toward DNA detection can be improved. In titration experiments, the surface-bound PNA probes were saturated with 50 nM of complementary target DNA, which required a 10-fold increase in concentration of single-base mismatched target DNA to achieve a similar surface saturation. The binding constant of DNA on the surface-bound PNA probes was determined from the concentration-dependent response (titration measurements) of our organic transistor biosensors. © 2011 Elsevier B.V. All rights reserved.

  20. The effect of pH and DNA concentration on organic thin-film transistor biosensors

    Khan, Hadayat Ullah; Roberts, Mark E.; Johnson, Olasupo B.; Knoll, Wolfgang; Bao, Zhenan

    2012-01-01

    Organic electronics are beginning to attract more interest for biosensor technology as they provide an amenable interface between biology and electronics. Stable biosensor based on electronic detection platform would represent a significant advancement in technology as costs and analysis time would decrease immensely. Organic materials provide a route toward that goal due to their compatibility with electronic applications and biological molecules. In this report, we detail the effects of experimental parameters, such as pH and concentration, toward the selective detection of DNA via surface-bound peptide nucleic acid (PNA) sequences on organic transistor biosensors. The OTFT biosensors are fabricated with thin-films of the organic semiconductor, 5,5′-bis-(7-dodecyl-9H-fluoren-2-yl)-2,2′-bithiophene (DDFTTF), in which they exhibit a stable mobility of 0.2 cm 2 V -1 s -1 in buffer solutions (phosphate-buffer saline, pH 7.4 or sodium acetate, pH 7). Device performance were optimized to minimize the deleterious effects of pH on gate-bias stress such that the sensitivity toward DNA detection can be improved. In titration experiments, the surface-bound PNA probes were saturated with 50 nM of complementary target DNA, which required a 10-fold increase in concentration of single-base mismatched target DNA to achieve a similar surface saturation. The binding constant of DNA on the surface-bound PNA probes was determined from the concentration-dependent response (titration measurements) of our organic transistor biosensors. © 2011 Elsevier B.V. All rights reserved.

  1. Ambipolar organic tri-gate transistor for low-power complementary electronics

    Torricelli, F.; Ghittorelli, M.; Smits, E.C.P.; Roelofs, C.; Janssen, R.A.J.; Gelinck, G.H.; Kovács-Vajna, Z.M.; Cantatore, E.

    2016-01-01

    Ambipolar transistors typically suffer from large off-current inherently due to ambipolar conduction. Using a tri-gate transistor it is shown that it is possible to electrostatically switch ambipolar polymer transistors from ambipolar to unipolar mode. In unipolar mode, symmetric characteristics

  2. Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism

    Santato, C.; Capelli, R.; Loi, M.A.; Murgia, M.; Cicoira, F.; Roy, Arunesh; Stallinga, P; Zamboni, R.; Rost, C.; Karg, S.F.; Muccini, M.

    2004-01-01

    Optoelectronic properties of light-emitting field-effect transistors (LETs) fabricated on bottom-contact transistor structures using a tetracene film as charge-transport and light-emitting material are investigated. Electroluminescence generation and transistor current are correlated, and the bias

  3. Organic thin film transistors and polymer light-emitting diodes patterned by polymer inking and stamping

    Li Dawen; Guo, L Jay

    2008-01-01

    To fully realize the advantages of organic flexible electronics, patterning is very important. In this paper we show that a purely additive patterning technique, termed polymer inking and stamping, can be used to pattern conductive polymer PEDOT and fabricate sub-micron channel length organic thin film transistors. In addition, we applied the technique to transfer a stack of metal/conjugated polymer in one step and fabricated working polymer light-emitting devices. Based on the polymer inking and stamping technique, a roll-to-roll printing for high throughput fabrication has been demonstrated. We investigated and explained the mechanism of this process based on the interfacial energy consideration and by using the finite element analysis. This technique can be further extended to transfer more complex stacked layer structures, which may benefit the research on patterning on flexible substrates

  4. Development of n-type polymer semiconductors for organic field-effect transistors

    Choi, Jongwan; Kim, Nakjoong; Song, Heeseok; Kim, Felix Sunjoo

    2015-01-01

    We review herein the development of unipolar n-type polymer semiconductors in organic field-effect transistors, which would enable large-scale deployment of printed electronics in combination with a fast-growing area of p-type counterparts. After discussing general features of electron transport in organic semiconductors, various π-conjugated polymers that are capable of transporting electrons are selected and summarized to outline the design principles for enhancing electron mobility and stability in air. The n-type polymer semiconductors with high electron mobility and good stability in air share common features of low-lying frontier molecular orbital energy levels achieved by design. In this review, materials are listed in roughly chronological order of the appearance of the key building blocks, such as various arylene diimides, or structural characteristics, including nitrile and fluorinated groups, in order to present the progress in the area of n-type polymers. (paper)

  5. Boost Up Carrier Mobility for Ferroelectric Organic Transistor Memory via Buffering Interfacial Polarization Fluctuation

    Sun, Huabin; Wang, Qijing; Li, Yun; Lin, Yen-Fu; Wang, Yu; Yin, Yao; Xu, Yong; Liu, Chuan; Tsukagoshi, Kazuhito; Pan, Lijia; Wang, Xizhang; Hu, Zheng; Shi, Yi

    2014-11-01

    Ferroelectric organic field-effect transistors (Fe-OFETs) have been attractive for a variety of non-volatile memory device applications. One of the critical issues of Fe-OFETs is the improvement of carrier mobility in semiconducting channels. In this article, we propose a novel interfacial buffering method that inserts an ultrathin poly(methyl methacrylate) (PMMA) between ferroelectric polymer and organic semiconductor layers. A high field-effect mobility (μFET) up to 4.6 cm2 V-1 s-1 is obtained. Subsequently, the programming process in our Fe-OFETs is mainly dominated by the switching between two ferroelectric polarizations rather than by the mobility-determined charge accumulation at the channel. Thus, the ``reading'' and ``programming'' speeds are significantly improved. Investigations show that the polarization fluctuation at semiconductor/insulator interfaces, which affect the charge transport in conducting channels, can be suppressed effectively using our method.

  6. Effect of Processing Parameters on Performance of Spray-Deposited Organic Thin-Film Transistors

    Jack W. Owen

    2011-01-01

    Full Text Available The performance of organic thin-film transistors (OTFTs is often strongly dependent on the fabrication procedure. In this study, we fabricate OTFTs of soluble small-molecule organic semiconductors by spray-deposition and explore the effect of processing parameters on film morphology and device mobility. In particular, we report on the effect of the nature of solvent, the pressure of the carrier gas used in deposition, and the spraying distance. We investigate the surface morphology using scanning force microscopy and show that the molecules pack along the π-stacking direction, which is the preferred charge transport direction. Our results demonstrate that we can tune the field-effect mobility of spray-deposited devices two orders of magnitude, from 10−3 cm2/Vs to 10−1 cm2/Vs, by controlling fabrication parameters.

  7. Molecular doping for control of gate bias stress in organic thin film transistors

    Hein, Moritz P., E-mail: hein@iapp.de; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Zakhidov, Alexander A. [Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany); Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Straße 1, 01069 Dresden (Germany); Fraunhofer COMEDD, Maria-Reiche-Str. 2, 01109 Dresden (Germany)

    2014-01-06

    The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface.

  8. Molecular doping for control of gate bias stress in organic thin film transistors

    Hein, Moritz P.; Lüssem, Björn; Jankowski, Jens; Tietze, Max L.; Riede, Moritz K.; Zakhidov, Alexander A.; Leo, Karl

    2014-01-01

    The key active devices of future organic electronic circuits are organic thin film transistors (OTFTs). Reliability of OTFTs remains one of the most challenging obstacles to be overcome for broad commercial applications. In particular, bias stress was identified as the key instability under operation for numerous OTFT devices and interfaces. Despite a multitude of experimental observations, a comprehensive mechanism describing this behavior is still missing. Furthermore, controlled methods to overcome these instabilities are so far lacking. Here, we present the approach to control and significantly alleviate the bias stress effect by using molecular doping at low concentrations. For pentacene and silicon oxide as gate oxide, we are able to reduce the time constant of degradation by three orders of magnitude. The effect of molecular doping on the bias stress behavior is explained in terms of the shift of Fermi Level and, thus, exponentially reduced proton generation at the pentacene/oxide interface

  9. Organic Field-Effect-Transistors with Pentacene for radio-controlled-price-tag applications

    C. Pannemannn

    2003-01-01

    Full Text Available This letter presents organic thin-film-transistors (OTFT using the small organic molecule Pentacene targeting applications like radio controlled identification tags. Simple OTFTs as well as inverter circuits based on a pconducting silicon wafer substrate are presented. Comparing PECVD oxide and LTO as dielectric, only LTO deposited layers provide sufficient electrical stability. PECVD oxides show defects called “pin-holes", leading to short circuiting through the gate dielectrics. OTFTs of L=1µm/W=1000µm were prepared providing Ids = 61µA at –40Vds and –40Vgs, a subthreshold slope of 10.3 V/dec and an on-offratio of 102. The inverter circuits using insulated gate contacts switch from VA=–10V to VA=–3V output voltage when the input voltage is varied from VE=0V to VE=–8V at a supplied voltage of VB=–10V.

  10. Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

    Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

    2018-02-01

    The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

  11. Flexible Electronics: Integration Processes for Organic and Inorganic Semiconductor-Based Thin-Film Transistors

    Fábio F. Vidor

    2015-07-01

    Full Text Available Flexible and transparent electronics have been studied intensively during the last few decades. The technique establishes the possibility of fabricating innovative products, from flexible displays to radio-frequency identification tags. Typically, large-area polymeric substrates such as polypropylene (PP or polyethylene terephthalate (PET are used, which produces new requirements for the integration processes. A key element for flexible and transparent electronics is the thin-film transistor (TFT, as it is responsible for the driving current in memory cells, digital circuits or organic light-emitting devices (OLEDs. In this paper, we discuss some fundamental concepts of TFT technology. Additionally, we present a comparison between the use of the semiconducting organic small-molecule pentacene and inorganic nanoparticle semiconductors in order to integrate TFTs suitable for flexible electronics. Moreover, a technique for integration with a submicron resolution suitable for glass and foil substrates is presented.

  12. Low-cost removal of organic pollutants with nickel nanoparticle loaded ordered macroporous hydrogel as high performance catalyst

    Tang, Mingyi, E-mail: tmyi@tjcu.edu.cn [Department of Applied Chemistry, School of Science, Tianjin University of Commerce, Tianjin 300134 (China); Huang, Guanbo, E-mail: gbhuang2007@hotmail.com [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Zhang, Sai [Department of Applied Chemistry, School of Science, Tianjin University of Commerce, Tianjin 300134 (China); Liu, Yue [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Li, Xianxian [Department of Applied Chemistry, School of Science, Tianjin University of Commerce, Tianjin 300134 (China); Wang, Xingrui [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China); Pang, Xiaobo [Department of Applied Chemistry, School of Science, Tianjin University of Commerce, Tianjin 300134 (China); Qiu, Haixia, E-mail: qhx@tju.edu.cn [Department of Chemistry, School of Science, Tianjin University, Tianjin 300072 (China)

    2014-06-01

    A facile route for the in situ preparation of catalytically active Ni nanoparticles (NPs) in ordered macroporous hydrogel (OMH) has been developed. The hydrogel was fabricated based on polystyrene colloid template. The electronegativity of amide and carboxyl groups on the poly(acrylamide-co-acryl acid) chains of the hydrogel caused strong binding of Ni{sup 2+} ions which made them distribute uniformly inside the hydrogel. When immersed in NaBH{sub 4} aqueous solution, the Ni{sup 2+} ions on the hydrogel were reduced to Ni NPs. The resultant Ni NPs loaded OMH showed good catalytic activity for the reduction of a common organic pollutant, 4-nitrophenol, with NaBH{sub 4}. A kinetic study of the catalytic reaction was carried out. The rate constant per unit weight could reach 0.53 s{sup −1} g{sup −1}, which is much better than many common hydrogel loaded nickel catalysts. Moreover, the current catalyst can be easily separated and recovered with stable catalytic activity. - Highlights: • A new poly(acrylamide-co-acryl acid) hydrogel with ordered macropores. • A simple in situ fabrication of nickel nanoparticles under mild conditions. • High-performance heterogeneous catalyst for removal of nitrophenol from water. • Good recyclability of catalyst without any complicated regeneration process.

  13. High performance organic integrated device with ultraviolet photodetective and electroluminescent properties consisting of a charge-transfer-featured naphthalimide derivative

    Wang, Hanyu; Wang, Xu; Yu, Junsheng, E-mail: luzhiyun@scu.edu.cn, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054 (China); Zhou, Jie; Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn, E-mail: jsyu@uestc.edu.cn [College of Chemistry, Sichuan University, Chengdu 610064 (China)

    2014-08-11

    A high performance organic integrated device (OID) with ultraviolet photodetective and electroluminescent (EL) properties was fabricated by using a charge-transfer-featured naphthalimide derivative of 6-(3,5-bis-[9-(4-t-butylphenyl)-9H-carbazol-3-yl]-phenoxy)-2- (4-t-butylphenyl)-benzo[de]isoquinoline-1,3-dione (CzPhONI) as the active layer. The results showed that the OID had a high detectivity of 1.5 × 10{sup 11} Jones at −3 V under the UV-350 nm illumination with an intensity of 0.6 mW/cm{sup 2}, and yielded an exciplex EL light emission with a maximum brightness of 1437 cd/m{sup 2}. Based on the energy band diagram, both the charge transfer feature of CzPhONI and matched energy level alignment were responsible for the dual ultraviolet photodetective and EL functions of OID.

  14. Low-cost removal of organic pollutants with nickel nanoparticle loaded ordered macroporous hydrogel as high performance catalyst

    Tang, Mingyi; Huang, Guanbo; Zhang, Sai; Liu, Yue; Li, Xianxian; Wang, Xingrui; Pang, Xiaobo; Qiu, Haixia

    2014-01-01

    A facile route for the in situ preparation of catalytically active Ni nanoparticles (NPs) in ordered macroporous hydrogel (OMH) has been developed. The hydrogel was fabricated based on polystyrene colloid template. The electronegativity of amide and carboxyl groups on the poly(acrylamide-co-acryl acid) chains of the hydrogel caused strong binding of Ni 2+ ions which made them distribute uniformly inside the hydrogel. When immersed in NaBH 4 aqueous solution, the Ni 2+ ions on the hydrogel were reduced to Ni NPs. The resultant Ni NPs loaded OMH showed good catalytic activity for the reduction of a common organic pollutant, 4-nitrophenol, with NaBH 4 . A kinetic study of the catalytic reaction was carried out. The rate constant per unit weight could reach 0.53 s −1  g −1 , which is much better than many common hydrogel loaded nickel catalysts. Moreover, the current catalyst can be easily separated and recovered with stable catalytic activity. - Highlights: • A new poly(acrylamide-co-acryl acid) hydrogel with ordered macropores. • A simple in situ fabrication of nickel nanoparticles under mild conditions. • High-performance heterogeneous catalyst for removal of nitrophenol from water. • Good recyclability of catalyst without any complicated regeneration process

  15. The woven fiber organic electrochemical transistors based on polypyrrole nanowires/reduced graphene oxide composites for glucose sensing.

    Wang, Yuedan; Qing, Xing; Zhou, Quan; Zhang, Yang; Liu, Qiongzhen; Liu, Ke; Wang, Wenwen; Li, Mufang; Lu, Zhentan; Chen, Yuanli; Wang, Dong

    2017-09-15

    Novel woven fiber organic electrochemical transistors based on polypyrrole (PPy) nanowires and reduced graphene oxide (rGO) have been prepared. SEM revealed that the introduction of rGO nanosheets could induce the growth and increase the amount of PPy nanowires. Moreover, it could enhance the electrical performance of fiber transistors. The hybrid transistors showed high on/off ratio of 10 2 , fast switch speed, and long cycling stability. The glucose sensors based on the fiber organic electrochemical transistors have also been investigated, which exhibited outstanding sensitivity, as high as 0.773 NCR/decade, with a response time as fast as 0.5s, a linear range of 1nM to 5μM, a low detection concentration as well as good repeatability. In addition, the glucose could be selectively detected in the presence of ascorbic acid and uric acid interferences. The reliability of the proposed glucose sensor was evaluated in real samples of rabbit blood. All the results indicate that the novel fiber transistors pave the way for portable and wearable electronics devices, which have a promising future for healthcare and biological applications. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Touch sensors based on planar liquid crystal-gated-organic field-effect transistors

    Seo, Jooyeok; Lee, Chulyeon; Han, Hyemi; Lee, Sooyong; Nam, Sungho; Kim, Youngkyoo; Kim, Hwajeong; Lee, Joon-Hyung; Park, Soo-Young; Kang, Inn-Kyu

    2014-01-01

    We report a tactile touch sensor based on a planar liquid crystal-gated-organic field-effect transistor (LC-g-OFET) structure. The LC-g-OFET touch sensors were fabricated by forming the 10 μm thick LC layer (4-cyano-4 ′ -pentylbiphenyl - 5CB) on top of the 50 nm thick channel layer (poly(3-hexylthiophene) - P3HT) that is coated on the in-plane aligned drain/source/gate electrodes (indium-tin oxide - ITO). As an external physical stimulation to examine the tactile touch performance, a weak nitrogen flow (83.3 μl/s) was employed to stimulate the LC layer of the touch device. The LC-g-OFET device exhibited p-type transistor characteristics with a hole mobility of 1.5 cm 2 /Vs, but no sensing current by the nitrogen flow touch was measured at sufficiently high drain (V D ) and gate (V G ) voltages. However, a clear sensing current signal was detected at lower voltages, which was quite sensitive to the combination of V D and V G . The best voltage combination was V D = −0.2 V and V G = −1 V for the highest ratio of signal currents to base currents (i.e., signal-to-noise ratio). The change in the LC alignment upon the nitrogen flow touch was assigned as the mechanism for the present LC-g-OFET touch sensors

  17. High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors

    Nandu B Chaure, Andrew N Cammidge, Isabelle Chambrier, Michael J Cook, Markys G Cain, Craig E Murphy, Chandana Pal and Asim K Ray

    2011-01-01

    Full Text Available Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl copper phthalocyanine (CuPc6 were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2 as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS resulted in values of 4×10−2 cm2 V−1 s−1 and 106 for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.

  18. Trap density of states in n-channel organic transistors: variable temperature characteristics and band transport

    Cho, Joung-min; Akiyama, Yuto; Kakinuma, Tomoyuki; Mori, Takehiko

    2013-01-01

    We have investigated trap density of states (trap DOS) in n-channel organic field-effect transistors based on N,N ’-bis(cyclohexyl)naphthalene diimide (Cy-NDI) and dimethyldicyanoquinonediimine (DMDCNQI). A new method is proposed to extract trap DOS from the Arrhenius plot of the temperature-dependent transconductance. Double exponential trap DOS are observed, in which Cy-NDI has considerable deep states, by contrast, DMDCNQI has substantial tail states. In addition, numerical simulation of the transistor characteristics has been conducted by assuming an exponential trap distribution and the interface approximation. Temperature dependence of transfer characteristics are well reproduced only using several parameters, and the trap DOS obtained from the simulated characteristics are in good agreement with the assumed trap DOS, indicating that our analysis is self-consistent. Although the experimentally obtained Meyer-Neldel temperature is related to the trap distribution width, the simulation satisfies the Meyer-Neldel rule only very phenomenologically. The simulation also reveals that the subthreshold swing is not always a good indicator of the total trap amount, because it also largely depends on the trap distribution width. Finally, band transport is explored from the simulation having a small number of traps. A crossing point of the transfer curves and negative activation energy above a certain gate voltage are observed in the simulated characteristics, where the critical V G above which band transport is realized is determined by the sum of the trapped and free charge states below the conduction band edge

  19. High-performance tandem organic light-emitting diodes based on a buffer-modified p/n-type planar organic heterojunction as charge generation layer

    Wu, Yukun; Sun, Ying; Qin, Houyun; Hu, Shoucheng; Wu, Qingyang; Zhao, Yi

    2017-04-01

    High-performance tandem organic light-emitting diodes (TOLEDs) were realized using a buffer-modified p/n-type planar organic heterojunction (OHJ) as charge generation layer (CGL) consisting of common organic materials, and the configuration of this p/n-type CGL was "LiF/N,N'-diphenyl-N,N'-bis(1-napthyl)-1,1'-biphenyl-4,4'-diamine (NPB)/4,7-diphenyl-1,10-phenanthroline (Bphen)/molybdenum oxide (MoOx)". The optimized TOLED exhibited a maximum current efficiency of 77.6 cd/A without any out-coupling techniques, and the efficiency roll-off was greatly improved compared to the single-unit OLED. The working mechanism of the p/n-type CGL was discussed in detail. It is found that the NPB/Bphen heterojunction generated enough charges under a forward applied voltage and the carrier extraction was a tunneling process. These results could provide a new method to fabricate high-performance TOLEDs.

  20. Controlled Growth of Ultrathin Film of Organic Semiconductors by Balancing the Competitive Processes in Dip-Coating for Organic Transistors.

    Wu, Kunjie; Li, Hongwei; Li, Liqiang; Zhang, Suna; Chen, Xiaosong; Xu, Zeyang; Zhang, Xi; Hu, Wenping; Chi, Lifeng; Gao, Xike; Meng, Yancheng

    2016-06-28

    Ultrathin film with thickness below 15 nm of organic semiconductors provides excellent platform for some fundamental research and practical applications in the field of organic electronics. However, it is quite challenging to develop a general principle for the growth of uniform and continuous ultrathin film over large area. Dip-coating is a useful technique to prepare diverse structures of organic semiconductors, but the assembly of organic semiconductors in dip-coating is quite complicated, and there are no reports about the core rules for the growth of ultrathin film via dip-coating until now. In this work, we develop a general strategy for the growth of ultrathin film of organic semiconductor via dip-coating, which provides a relatively facile model to analyze the growth behavior. The balance between the three direct factors (nucleation rate, assembly rate, and recession rate) is the key to determine the growth of ultrathin film. Under the direction of this rule, ultrathin films of four organic semiconductors are obtained. The field-effect transistors constructed on the ultrathin film show good field-effect property. This work provides a general principle and systematic guideline to prepare ultrathin film of organic semiconductors via dip-coating, which would be highly meaningful for organic electronics as well as for the assembly of other materials via solution processes.

  1. Substrate-free ultra-flexible organic field-effect transistors and five-stage ring oscillators.

    Zhang, Lei; Wang, Hanlin; Zhao, Yan; Guo, Yunlong; Hu, Wenping; Yu, Gui; Liu, Yunqi

    2013-10-11

    Freestanding, substrate-free organic field-effect transistors and organic circuits with a nominal thickness of 320 nm are demonstrated by using a simple water-floatation method. The devices work well in freestanding status, attached on banknotes, or bent over the blade of a knife. The ultralight devices with extreme bending stability indicate a bright future for organic electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Hole transport in organic field-effect transistors with active poly(3-hexylthiophene) layer containing CdSe quantum dots

    Bielecka, Urszula; Lutsyk, P.; Nyk, M.; Janus, K.; Samoć, M.; Bartkowiak, W.; Nešpůrek, Stanislav

    2013-01-01

    Roč. 31, č. 2 (2013), s. 288-297 ISSN 2083-1331 EU Projects: European Commission(XE) 35859 - BIMORE Institutional research plan: CEZ:AV0Z40500505 Keywords : organic transistor * poly(3-hexylthiophene) * CdSe Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.327, year: 2013

  3. Revealing Buried Interfaces to Understand the Origins of Threshold Voltage Shifts in Organic Field-Effect Transistors

    Mathijssen, Simon G. J.; Spijkman, Mark-Jan; Andringa, Anne-Marije; van Hal, Paul A.; McCulloch, Iain; Kemerink, Martijn; Janssen, Rene A. J.; de Leeuw, Dago M.

    2010-01-01

    The semiconductor of an organic field-effect transistor is stripped with adhesive tape, yielding an exposed gate dielectric, accessible for various characterization techniques. By using scanning Kelvin probe microscopy we reveal that trapped charges after gate bias stress are located at the gate

  4. Stable Low-Voltage Operation Top-Gate Organic Field-Effect Transistors on Cellulose Nanocrystal Substrates

    Cheng-Yin Wang; Canek Fuentes-Hernandez; Jen-Chieh Liu; Amir Dindar; Sangmoo Choi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

    2015-01-01

    We report on the performance and the characterization of top-gate organic field-effect transistors (OFETs), comprising a bilayer gate dielectric of CYTOP/ Al2O3 and a solution-processed semiconductor layer made of a blend of TIPS-pentacene:PTAA, fabricated on recyclable cellulose nanocrystal−glycerol (CNC/glycerol...

  5. Effect of Coulomb scattering from trapped charges on the mobility in an organic field-effect transistor

    Sharma, A.; Janssen, N.M.A.; Matthijssen, S.J.G.; de Leeuw, D.M.; Kemerink, M.; Bobbert, P.A.

    2011-01-01

    We investigate the effect of Coulomb scattering from trapped charges on the mobility in the two-dimensional channel of an organic field-effect transistor. The number of trapped charges can be tuned by applying a prolonged gate bias. Surprisingly, after increasing the number of trapped charges to a

  6. Multi-target determination of organic ultraviolet absorbents in organism tissues by ultrasonic assisted extraction and ultra-high performance liquid chromatography-tandem mass spectrometry.

    Peng, Xianzhi; Jin, Jiabin; Wang, Chunwei; Ou, Weihui; Tang, Caiming

    2015-03-06

    A sensitive and reliable method was developed for multi-target determination of 13 most widely used organic ultraviolet (UV) absorbents (including UV filters and UV stabilizers) in aquatic organism tissues. The organic UV absorbents were extracted using ultrasonic-assisted extraction, purified via gel permeation chromatography coupled with silica gel column chromatography, and determined by ultra-high performance liquid chromatography-tandem mass spectrometry. Recoveries of the UV absorbents from organism tissues mostly ranged from 70% to 120% from fish filet with satisfactory reproducibility. Method quantification limits were 0.003-1.0ngg(-1) dry weight (dw) except for 2-ethylhexyl 4-methoxycinnamate. This method has been applied to analysis of the UV absorbents in wild and farmed aquatic organisms collected from the Pearl River Estuary, South China. 2-Hydroxy-4-methoxybenzophenone and UV-P were frequently detected in both wild and farmed marine organisms at low ngg(-1)dw. 3-(4-Methylbenzylidene)camphor and most of the benzotriazole UV stabilizers were also frequently detected in maricultured fish. Octocrylene and 2-ethylhexyl 4-methoxycinnamate were not detected in any sample. This work lays basis for in-depth study about bioaccumulation and biomagnification of the UV absorbents in marine environment. Copyright © 2015 Elsevier B.V. All rights reserved.

  7. Thermal Molding of Organic Thin-Film Transistor Arrays on Curved Surfaces.

    Sakai, Masatoshi; Watanabe, Kento; Ishimine, Hiroto; Okada, Yugo; Yamauchi, Hiroshi; Sadamitsu, Yuichi; Kudo, Kazuhiro

    2017-12-01

    In this work, a thermal molding technique is proposed for the fabrication of plastic electronics on curved surfaces, enabling the preparation of plastic films with freely designed shapes. The induced strain distribution observed in poly(ethylene naphthalate) films when planar sheets were deformed into hemispherical surfaces clearly indicated that natural thermal contraction played an important role in the formation of the curved surface. A fingertip-shaped organic thin-film transistor array molded from a real human finger was fabricated, and slight deformation induced by touching an object was detected from the drain current response. This type of device will lead to the development of robot fingers equipped with a sensitive tactile sense for precision work such as palpation or surgery.

  8. Thienoacene-fused pentalenes: Syntheses, structures, physical properties and applications for organic field-effect transistors

    Dai, Gaole

    2014-11-27

    Three soluble and stable thienoacene-fused pentalene derivatives (1-3) with different π-conjugation lengths were synthesized. X-ray crystallographic analysis and density functional theory (DFT) calculations revealed their unique geometric and electronic structures due to the interaction between the aromatic thienoacene units and antiaromatic pentalene moiety. As a result, they all possess a small energy gap and show amphoteric redox behaviour. Time dependent (TD) DFT calculations were used to explain their unique electronic absorption spectra. These new compounds exhibited good thermal stability and ordered packing in solid state and thus their applications in organic field-effect transistors (OFETs) were also investigated. The highest field-effect hole mobility of 0.016, 0.036 and 0.001 cm2 V-1 s-1 was achieved for solution-processed thin films of 1-3, respectively.

  9. Exponential dependence of potential barrier height on biased voltages of inorganic/organic static induction transistor

    Zhang Yong; Yang Jianhong; Cai Xueyuan; Wang Zaixing

    2010-01-01

    The exponential dependence of the potential barrier height φ c on the biased voltages of the inorganic/organic static induction transistor (SIT/OSIT) through a normalized approach in the low-current regime is presented. It shows a more accurate description than the linear expression of the potential barrier height. Through the verification of the numerical calculated and experimental results, the exponential dependence of φ c on the applied biases can be used to derive the I-V characteristics. For both SIT and OSIT, the calculated results, using the presented relationship, are agreeable with the experimental results. Compared to the previous linear relationship, the exponential description of φ c can contribute effectively to reduce the error between the theoretical and experimental results of the I-V characteristics. (semiconductor devices)

  10. Influence of thermocleavable functionality on organic field-effect transistor performance of small molecules

    Mahale, Rajashree Y.; Dharmapurikar, Satej S.; Chini, Mrinmoy Kumar; Venugopalan, Vijay

    2017-06-01

    Diketopyrrolopyrrole based donor-acceptor-donor conjugated small molecules using ethylene dioxythiophene as a donor was synthesized. Electron deficient diketopyrrolopyrrole unit was substituted with thermocleavable (tert-butyl acetate) side chains. The thermal treatment of the molecules at 160 °C eliminated the tert-butyl ester group results in the formation of corresponding acid. Optical and theoretical studies revealed that the molecules adopted a change in molecular arrangement after thermolysis. The conjugated small molecules possessed p-channel charge transport characteristics in organic field effect transistors. The charge carrier mobility was increased after thermolysis of tert-butyl ester group to 5.07 × 10-5 cm2/V s.

  11. N-Type Semiconducting Behavior of Copper Octafluorophthalocyanine in an Organic Field-Effect Transistor

    Akane Matumoto

    2017-10-01

    Full Text Available Based on the crystal structure analysis, the overlap integral between the frontier molecular orbitals of adjacent F8CuPcs in the one-dimensional chain is estimated: the overlap integral between the lowest unoccupied molecular orbitals is 5.4 × 10−3, which is larger than that in a typical n-type semiconducing material F16CuPc (2.1 × 10−3, whereas that between the highest occupied molecular orbitals is 2.9 × 10−4. Contrary to previous studies in air, we found that an organic field-effect transistor (OFET composed of F8CuPc essentially shows clear n-type semiconducting behavior in vacuum.

  12. Internal additive noise effects in stochastic resonance using organic field effect transistor

    Suzuki, Yoshiharu; Asakawa, Naoki [Division of Molecular Science, Graduate School of Science and Technology, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376-8515 (Japan); Matsubara, Kiyohiko [KOOROGI LLC, 6-1585-1-B Sakaino-cho, Kiryu, Gunma 376-0002 (Japan)

    2016-08-29

    Stochastic resonance phenomenon was observed in organic field effect transistor using poly(3-hexylthiophene), which enhances performance of signal transmission with application of noise. The enhancement of correlation coefficient between the input and output signals was low, and the variation of correlation coefficient was not remarkable with respect to the intensity of external noise, which was due to the existence of internal additive noise following the nonlinear threshold response. In other words, internal additive noise plays a positive role on the capability of approximately constant signal transmission regardless of noise intensity, which can be said “homeostatic” behavior or “noise robustness” against external noise. Furthermore, internal additive noise causes emergence of the stochastic resonance effect even on the threshold unit without internal additive noise on which the correlation coefficient usually decreases monotonically.

  13. Synthesis and physical properties of asymmetrical quaterthiophene derivatives as organic thin-film transistor materials

    Shaik, Baji; Noh, Young Ri; Choi, Ho June; Yoon, Soon Byung; Lee, Sang Gyeong [Research Institute of Natura l Science, Gyeongsang National University, Jinju (Korea, Republic of); Yun, Myoung Hee; Kim, Jin Young [Ulsan National Institute of Science and Technology, Ulsan (Korea, Republic of)

    2015-04-15

    We report here, synthesis, physical, thermal, and optoelectronic properties of compounds containing anthracene, anthraquinone, and 11,11,12,12-tetracyano-9,10-anthraquinodimethane units connected to quaterthiophene units. Three compounds, TQAO (6), TQAN (7), and TQAM (8) are synthesized by using Stille coupling, reduction, and Knoevenagel condensation reactions. These compounds were thermally stable and exhibited organic thin-film transistor (OTFT) properties. Among them, TQAM (8)-based OTFT has shown ambipolar mobility, both hole and electron mobility of 2.0 × 10{sup −6} and 2.43 × 10{sup −7} cm{sup 2}/Vs, respectively. TQAO (6) and TQAN (7) has shown low electron mobility of 5.58 × 10{sup −6} and 1.22 × 10{sup −5} cm{sup 2}/Vs, respectively.

  14. Hysteresis mechanism and control in pentacene organic field-effect transistors with polymer dielectric

    Wei Huang

    2013-05-01

    Full Text Available Hysteresis mechanism of pentacene organic field-effect transistors (OFETs with polyvinyl alcohol (PVA and/or polymethyl methacrylate (PMMA dielectrics is studied. Through analyzing the electrical characteristics of OFETs with various PVA/PMMA arrangements, it shows that charge, which is trapped in PVA bulk and at the interface of pentacene/PVA, is one of the origins of hysteresis. The results also show that memory window is proportional to both trap amount in PVA and charge density at the gate/PVA or PVA/pentacene interfaces. Hence, the controllable memory window of around 0 ∼ 10 V can be realized by controlling the thickness and combination of triple-layer polymer dielectrics.

  15. Morphological and crystalline characterization of pulsed laser deposited pentacene thin films for organic transistor applications

    Pereira, Antonio; Bonhommeau, Sébastien; Sirotkin, Sergey; Desplanche, Sarah; Kaba, Mamadouba; Constantinescu, Catalin; Diallo, Abdou Karim; Talaga, David; Penuelas, Jose; Videlot-Ackermann, Christine; Alloncle, Anne-Patricia; Delaporte, Philippe; Rodriguez, Vincent

    2017-10-01

    We show that high-quality pentacene (P5) thin films of high crystallinity and low surface roughness can be produced by pulsed laser deposition (PLD) without inducing chemical degradation of the molecules. By using Raman spectroscopy and X-ray diffraction measurements, we also demonstrate that the deposition of P5 on Au layers result in highly disordered P5 thin films. While the P5 molecules arrange within the well-documented 1.54-nm thin-film phase on high-purity fused silica substrates, this ordering is indeed destroyed upon introducing an Au interlayer. This observation may be one explanation for the low electrical performances measured in P5-based organic thin film transistors (OTFTs) deposited by laser-induced forward transfer (LIFT).

  16. Ordering of pentacene in organic thin film transistors induced by irradiation of infrared light

    Wang, C. H.; Chen, S. W.; Hwang, J.

    2009-01-01

    The device performances of pentacene-based organic thin film transistors (OTFTs) were greatly improved by irradiation of infrared light. The field effect mobility and maximum drain current increase from 0.20±0.01 to 0.57±0.02 cm 2 /V s and 1.14x10 -5 to 4.91x10 -5 A, respectively. The (001) peak of the pentacene 'thin film' phase increases in intensity by 4.5 times after infrared irradiation at 50 W for 2 h. Two types of crystal orientations, i.e., 'crystal I' (2θ=5.91 deg.) and 'crystal II' (2θ=5.84 deg.), coexist in the pentacene. The improvement of the characteristics of OTFTs is attributed to crystallization and crystal reorientation induced by infrared light.

  17. Mapping Charge Carrier Density in Organic Thin-Film Transistors by Time-Resolved Photoluminescence Lifetime Studies

    Leißner, Till; Jensen, Per Baunegaard With; Liu, Yiming

    2017-01-01

    The device performance of organic transistors is strongly influenced by the charge carrier distribution. A range of factors effect this distribution, including injection barriers at the metal-semiconductor interface, the morphology of the organic film, and charge traps at the dielectric/organic...... interface or at grain boundaries. In our comprehensive experimental and analytical work we demonstrate a method to characterize the charge carrier density in organic thin-film transistors using time-resolved photoluminescence spectroscopy. We developed a numerical model that describes the electrical...... and optical responses consistently. We determined the densities of free and trapped holes at the interface between the organic layer and the SiO2 gate dielectric by comparison to electrical measurements. Furthermore by applying fluorescence lifetime imaging microscopy we determine the local charge carrier...

  18. Overview of one transistor type of hybrid organic ferroelectric non-volatile memory

    Young; Tea; Chun; Daping; Chu

    2015-01-01

    Organic ferroelectric memory devices based on field effect transistors that can be configured between two stable states of on and off have been widely researched as the next generation data storage media in recent years.This emerging type of memory devices can lead to a new instrument system as a potential alternative to previous non-volatile memory building blocks in future processing units because of their numerous merits such as cost-effective process,simple structure and freedom in substrate choices.This bi-stable non-volatile memory device of information storage has been investigated using several organic or inorganic semiconductors with organic ferroelectric polymer materials.Recent progresses in this ferroelectric memory field,hybrid system have attracted a lot of attention due to their excellent device performance in comparison with that of all organic systems.In this paper,a general review of this type of ferroelectric non-volatile memory is provided,which include the device structure,organic ferroelectric materials,electrical characteristics and working principles.We also present some snapshots of our previous study on hybrid ferroelectric memories including our recent work based on zinc oxide nanowire channels.

  19. MOBILITAS PEMBAWA MUATAN PADA OFET (ORGANIC FIELD EFFECT TRANSISTOR BERBASIS FILM TIPIS

    Sujarwata -

    2014-06-01

    Full Text Available Abstrak __________________________________________________________________________________________ Tujuan penelitian ini adalah pembuatan dan karakterisasi pada OFET (Organic Field Effect Transistor berbasis film tipis dengan struktur bottom-contact. Pembuatan OFET dilakukan dengan cara pencucian substrat dengan etanol dalam ultrasonic cleaner, kemudian dilakukan deposisi elektroda source dan drain di atas substrat SiO2 dengan metode  penguapan hampa udara pada suhu ruang dan teknik lithography. Selanjutnya dilakukan deposisi film tipis CuPc diantara source (S dan drain (D sebagai panjang saluran (channel dan diakhiri dengan deposisi elektrode gate (G. Karakterisai OFET berbasis film tipis dilakukan dengan El-Kahfi 100, untuk menentukan karakteristik keluaran V-I. Hasil karakterisasi OFET dengan panjang channel (L 100 μm dan lebar (W 1 mm, mempunyai daerah aktif, yaitu: 2,80 V sampai dengan 3,42. Mobilitas pembawa muatan OFET untuk daerah saturasi, µ = 0,00182278 cm2 /Vs dan untuk daerah linier, µ = 0,000343818  cm2 /Vs   Abstract __________________________________________________________________________________________ The purpose of this research is to produce and characterize the OFET (Organic Field Effect Transistor based on thin film with bottom-contact structure. The OFET production consists of the substract wash by using ethanol in the ultrasonic cleaner, then electrode deposition of source and drain on the SiO2 substract by using vacuum evaporation in the room temperature and lithography technique.  Then, the deposition of thin film of CuPc between source (S and drain (D was done as the channel length and ended with electrode gate (G deposition. The OFET characterization  with channel length (L  100 μm and wide (W 1 mm  obtained the active area of 2,80 - 3,42 v. While the mobility of OFET charge carrier  obtained µ =  0,00182278 cm2 /Vs for the saturation area and µ = 0,000343818  cm2 /Vs for linier area.

  20. Overview of recent developments in organic thin-film transistor sensor technology

    Tanese, M.C.; Marinelli, F.; Angione, D.; Torsi, L.

    2008-01-01

    Bio and chemical sensing represents one of the most attractive applications of organic electronics and of Organic Thin Film Transistors(OTFTs) in particular. The implementation of miniaturized portable systems for the detection of chemical analytes as well as of biological species, is still a challenge for the sensor' community. In this respect OTFTs appear as a new class of sensors able, in principle, to overcome some of the commercial sensors drawbacks. As far as volatile analytes are concerned, commercially available sensing systems, such as metal oxide based chemi-resistors, offer great stability but rather poor selectivity. In spite of the improved selectivity offered by organic chemi-resistors the reliability of such devices is not yet satisfactory proven. On the other hand, complex odors recognition, but also explosives or pathogen bacteria detection are currently being addressed by sensor array systems, called e-noses, that try to mimic the mammalian olfactory system. Even though potentially very effective, this technology has not yet reached the performance level required by the market mostly because miniaturization and cost effective production issues. OTFT sensors can offer the advantage of room temperature operation and deliver high repeatable responses. Beside, they show very good selectivity properties. In fact, they implement organic active layers, which behave as sensing layers as well. This improves OTFTs sensitivity towards different chemical and biological analytes as organic materials can be properly chemically tailored to achieve differential detection and potentially even discrimination of biological species. In addiction to this, OTFTs are also able to offer the unique advantages of multi-parametric response and a gate bias enhanced sensitivity. Recently thin dielectric low-voltage OTFTs have also been demonstrated. Their implementation in low power consumption devices has attracted the attention of the organic electronic community. But such

  1. Enhancing the performance of organic thin-film transistors using an organic-doped inorganic buffer layer

    Su, Shui-Hsiang, E-mail: shsu@isu.edu.tw; Wu, Chung-Ming; Kung, Shu-Yi; Yokoyama, Meiso

    2013-06-01

    Organic thin-film transistors (OTFTs) with various buffer layers between the active layer and source/drain electrodes were investigated. The structure was polyethylene terephthalate/indium-tin oxide/poly(methyl methacrylate) (PMMA)/pentacene/buffer layer/Au (source/drain). V{sub 2}O{sub 5}, 4,4′,4″-tris{N,(3-methylpheny)-N-phenylamino}-triphenylamine (m-MTDATA) and m-MTDATA-doped V{sub 2}O{sub 5} films were utilized as buffer layers. The electrical performances of OTFTs in terms of drain current, threshold voltage, mobility and on/off current ratio have been determined. As a result, the saturation current of − 40 μA is achieved in OTFTs with a 10% m-MTDATA-doped V{sub 2}O{sub 5} buffer layer at a V{sub GS} of − 60 V. The on/off current ratio reaches 2 × 10{sup 5}, which is approximately double of the device without a buffer layer. The energy band diagrams of the electrode/buffer layer/pentacene were measured using ultra-violet photoelectron spectroscopy. The improvement in electrical characteristics of the OTFTs is attributable to the weakening of the interface dipole and the lowering of the barrier to enhance holes transportation from the source electrode to the active layer. - Highlights: • A buffer layer enhances the performance of organic thin-film transistors (OTFTs). • The buffer layer consists of organic-doped inorganic material. • Interface dipole is weakened at the active layer/electrodes interface of OTFTs.

  2. Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

    Zhang, Fengjiao [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Dai, Xiaojuan [Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190 P. R. China; Zhu, Weikun [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Chung, Hyunjoong [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA; Diao, Ying [Department of Chemical and Biomolecular Engineering, University of Illinois Urbana-Champaign, 600 S. Mathews Ave. Urbana IL 61801 USA

    2017-05-10

    Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.

  3. Solvent-resistant organic transistors and thermally stable organic photovoltaics based on cross-linkable conjugated polymers

    Kim, Hyeongjun

    2012-01-10

    Conjugated polymers, in general, are unstable when exposed to air, solvent, or thermal treatment, and these challenges limit their practical applications. Therefore, it is of great importance to develop new materials or methodologies that can enable organic electronics with air stability, solvent resistance, and thermal stability. Herein, we have developed a simple but powerful approach to achieve solvent-resistant and thermally stable organic electronic devices with a remarkably improved air stability, by introducing an azide cross-linkable group into a conjugated polymer. To demonstrate this concept, we have synthesized polythiophene with azide groups attached to end of the alkyl chain (P3HT-azide). Photo-cross-linking of P3HT-azide copolymers dramatically improves the solvent resistance of the active layer without disrupting the molecular ordering and charge transport. This is the first demonstration of solvent-resistant organic transistors. Furthermore, the bulk-heterojunction organic photovoltaics (BHJ OPVs) containing P3HT-azide copolymers show an average efficiency higher than 3.3% after 40 h annealing at an elevated temperature of 150 °C, which represents one of the most thermally stable OPV devices reported to date. This enhanced stability is due to an in situ compatibilizer that forms at the P3HT/PCBM interface and suppresses macrophase separation. Our approach paves a way toward organic electronics with robust and stable operations. © 2011 American Chemical Society.

  4. Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

    Wondmagegn, Wudyalew T.; Satyala, Nikhil T.; Pieper, Ron J.; Quevedo-Ló pez, Manuel Angel Quevedo; Gowrisanker, Srinivas; Alshareef, Husam N.; Stiegler, Harvey J.; Gnade, Bruce E.

    2010-01-01

    The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.

  5. Impact of semiconductor/metal interfaces on contact resistance and operating speed of organic thin film transistors

    Wondmagegn, Wudyalew T.

    2010-09-24

    The contact resistance of field effect transistors based on pentacene and parylene has been investigated by experimental and numerical analysis. The device simulation was performed using finite element two-dimensional drift-diffusion simulation taking into account field-dependent mobility, interface/bulk trap states and fixed charge density at the organic/insulator interface. The width-normalized contact resistance extracted from simulation which included an interface dipole layer between the gold source/drain electrodes and pentacene was 91 kΩcm. However, contact resistance extracted from the simulation, without consideration of interface dipole was 52.4 kΩcm, which is about half of the experimentally extracted 108 kΩcm. This indicates that interface dipoles are critical effects which degrade performances of organic field effect transistors by increasing the contact resistance. Using numerical calculations and circuit simulations, we have predicted a 1 MHz switching frequency for a 1 μm channel length transistor without dipole interface between gold and pentacene. The transistor with dipole interface is predicted, via the same methods, to exhibit an operating frequency of less than 0.5 MHz. © 2010 Springer Science+Business Media LLC.

  6. High-performance liquid chromatography separation of unsaturated organic compounds by a monolithic silica column embedded with silver nanoparticles.

    Zhu, Yang; Morisato, Kei; Hasegawa, George; Moitra, Nirmalya; Kiyomura, Tsutomu; Kurata, Hiroki; Kanamori, Kazuyoshi; Nakanishi, Kazuki

    2015-08-01

    The optimization of a porous structure to ensure good separation performances is always a significant issue in high-performance liquid chromatography column design. Recently we reported the homogeneous embedment of Ag nanoparticles in periodic mesoporous silica monolith and the application of such Ag nanoparticles embedded silica monolith for the high-performance liquid chromatography separation of polyaromatic hydrocarbons. However, the separation performance remains to be improved and the retention mechanism as compared with the Ag ion high-performance liquid chromatography technique still needs to be clarified. In this research, Ag nanoparticles were introduced into a macro/mesoporous silica monolith with optimized pore parameters for high-performance liquid chromatography separations. Baseline separation of benzene, naphthalene, anthracene, and pyrene was achieved with the theoretical plate number for analyte naphthalene as 36,000 m(-1). Its separation function was further extended to cis/trans isomers of aromatic compounds where cis/trans stilbenes were chosen as a benchmark. Good separation of cis/trans-stilbene with separation factor as 7 and theoretical plate number as 76,000 m(-1) for cis-stilbene was obtained. The trans isomer, however, is retained more strongly, which contradicts the long- established retention rule of Ag ion chromatography. Such behavior of Ag nanoparticles embedded in a silica column can be attributed to the differences in the molecular geometric configuration of cis/trans stilbenes. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. "Liquid-liquid-solid"-type superoleophobic surfaces to pattern polymeric semiconductors towards high-quality organic field-effect transistors.

    Wu, Yuchen; Su, Bin; Jiang, Lei; Heeger, Alan J

    2013-12-03

    Precisely aligned organic-liquid-soluble semiconductor microwire arrays have been fabricated by "liquid-liquid-solid" type superoleophobic surfaces directed fluid drying. Aligned organic 1D micro-architectures can be built as high-quality organic field-effect transistors with high mobilities of >10 cm(2) ·V(-1) ·s(-1) and current on/off ratio of more than 10(6) . All these studies will boost the development of 1D microstructures of organic semiconductor materials for potential application in organic electronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Pursuing Polymer Dielectric Interfacial Effect in Organic Transistors for Photosensing Performance Optimization.

    Wu, Xiaohan; Chu, Yingli; Liu, Rui; Katz, Howard E; Huang, Jia

    2017-12-01

    Polymer dielectrics in organic field-effect transistors (OFETs) are essential to provide the devices with overall flexibility, stretchability, and printability and simultaneously introduce charge interaction on the interface with organic semiconductors (OSCs). The interfacial effect between various polymer dielectrics and OSCs significantly and intricately influences device performance. However, understanding of this effect is limited because the interface is buried and the interfacial charge interaction is difficult to stimulate and characterize. Here, this challenge is overcome by utilizing illumination to stimulate the interfacial effect in various OFETs and to characterize the responses of the effect by measuring photoinduced changes of the OFETs performances. This systemic investigation reveals the mechanism of the intricate interfacial effect in detail, and mathematically explains how the photosensitive OFETs characteristics are determined by parameters including polar group of the polymer dielectric and the OSC side chain. By utilizing this mechanism, performance of organic electronics can be precisely controlled and optimized. OFETs with strong interfacial effect can also show a signal additivity caused by repeated light pulses, which is applicable for photostimulated synapse emulator. Therefore, this work enlightens a detailed understanding on the interface effect and provides novel strategies for optimizing OFET photosensory performances.

  9. Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

    Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

    2015-09-01

    We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

  10. Sensitivity of the threshold voltage of organic thin-film transistors to light and water

    Feng, Cong; Marinov, Ognian; Deen, M. Jamal; Selvaganapathy, Ponnambalam Ravi [McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4K1 (Canada); Wu, Yiliang [Xerox Research Centre, 2660 Speakman Dr., Mississauga, Ontario L5K 2L1 (Canada)

    2015-05-14

    Analyses of extensive experiments with organic thin-film transistors (OTFTs) indicate that the threshold voltage V{sub T} of an OTFT has a temporal differential sensitivity. In particular, V{sub T} changes initially by changing the light illumination intensity or making/removing a contact of water with the organic semiconductor. Keeping the conditions stationary, then the initial shift of V{sub T} diminishes, since the time dependence of V{sub T} gradually recovers the OTFT to the state before applying the change in the environmental conditions. While still causing a differential and time-variant shift of V{sub T}, the deionized water does not have a dramatic impact on OTFTs that use the polymer DKPP-βT (diketopyrrolopyrrole β-unsubstituted quaterthiophene) as the active semiconductor material. Observations for the impact of water are made from experiments with an OTFT that has a microfluidic channel on the top the electrical channel, with the water in the microfluidic channel in direct contact with the electrical channel of the OTFT. This arrangement of electrical and microfluidic channels is a novel structure of the microfluidic OTFT, suitable for sensing applications of liquid analytes by means of organic electronics.

  11. Flexible suspended gate organic thin-film transistors for ultra-sensitive pressure detection

    Zang, Yaping; Zhang, Fengjiao; Huang, Dazhen; Gao, Xike; di, Chong-An; Zhu, Daoben

    2015-03-01

    The utilization of organic devices as pressure-sensing elements in artificial intelligence and healthcare applications represents a fascinating opportunity for the next-generation electronic products. To satisfy the critical requirements of these promising applications, the low-cost construction of large-area ultra-sensitive organic pressure devices with outstanding flexibility is highly desired. Here we present flexible suspended gate organic thin-film transistors (SGOTFTs) as a model platform that enables ultra-sensitive pressure detection. More importantly, the unique device geometry of SGOTFTs allows the fine-tuning of their sensitivity by the suspended gate. An unprecedented sensitivity of 192 kPa-1, a low limit-of-detection pressure of <0.5 Pa and a short response time of 10 ms were successfully realized, allowing the real-time detection of acoustic waves. These excellent sensing properties of SGOTFTs, together with their advantages of facile large-area fabrication and versatility in detecting various pressure signals, make SGOTFTs a powerful strategy for spatial pressure mapping in practical applications.

  12. Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

    Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

    2015-01-01

    We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10–2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost. PMID:26416434

  13. Quasi-unipolar pentacene films embedded with fullerene for non-volatile organic transistor memories

    Lee, Juhee; Lee, Sungpyo; Lee, Moo Hyung; Kang, Moon Sung, E-mail: mskang@ssu.ac.kr [Department of Chemical Engineering, Soongsil University, Seoul 156-743 (Korea, Republic of)

    2015-02-09

    Quasi-unipolar non-volatile organic transistor memory (NOTM) can combine the best characteristics of conventional unipolar and ambipolar NOTMs and, as a result, exhibit improved device performance. Unipolar NOTMs typically exhibit a large signal ratio between the programmed and erased current signals but also require a large voltage to program and erase the memory cells. Meanwhile, an ambipolar NOTM can be programmed and erased at lower voltages, but the resulting signal ratio is small. By embedding a discontinuous n-type fullerene layer within a p-type pentacene film, quasi-unipolar NOTMs are fabricated, of which the signal storage utilizes both electrons and holes while the electrical signal relies on only hole conduction. These devices exhibit superior memory performance relative to both pristine unipolar pentacene devices and ambipolar fullerene/pentacene bilayer devices. The quasi-unipolar NOTM exhibited a larger signal ratio between the programmed and erased states while also reducing the voltage required to program and erase a memory cell. This simple approach should be readily applicable for various combinations of advanced organic semiconductors that have been recently developed and thereby should make a significant impact on organic memory research.

  14. Bay-annulated indigo (BAI) as an excellent electron accepting building block for high performance organic semiconductors

    Liu, Yi; He, Bo; Pun, Andrew

    2015-11-24

    A novel electron acceptor based on bay-annulated indigo (BAI) was synthesized and used for the preparation of a series of high performance donor-acceptor small molecules and polymers. The resulting materials possess low-lying LUMO energy level and small HOMO-LUMO gaps, while their films exhibited high crystallinity upon thermal treatment, commensurate with high field effect mobilities and ambipolar transfer characteristics.

  15. The influence of isomer purity on trap states and performance of organic thin-film transistors.

    Diemer, Peter J; Hayes, Jacori; Welchman, Evan; Hallani, Rawad; Pookpanratana, Sujitra J; Hacker, Christina A; Richter, Curt A; Anthony, John E; Thonhauser, Timo; Jurchescu, Oana D

    2017-01-01

    Organic field-effect transistor (OFET) performance is dictated by its composition and geometry, as well as the quality of the organic semiconductor (OSC) film, which strongly depends on purity and microstructure. When present, impurities and defects give rise to trap states in the bandgap of the OSC, lowering device performance. Here, 2,8-difluoro-5,11-bis(triethylsilylethynyl)-anthradithiophene is used as a model system to study the mechanism responsible for performance degradation in OFETs due to isomer coexistence. The density of trapping states is evaluated through temperature dependent current-voltage measurements, and it is discovered that OFETs containing a mixture of syn - and anti -isomers exhibit a discrete trapping state detected as a peak located at ~ 0.4 eV above the valence-band edge, which is absent in the samples fabricated on single-isomer films. Ultraviolet photoelectron spectroscopy measurements and density functional theory calculations do not point to a significant difference in electronic band structure between individual isomers. Instead, it is proposed that the dipole moment of the syn -isomer present in the host crystal of the anti -isomer locally polarizes the neighboring molecules, inducing energetic disorder. The isomers can be separated by applying gentle mechanical vibrations during film crystallization, as confirmed by the suppression of the peak and improvement in device performance.

  16. Heterogeneous nucleation promotes carrier transport in solution-processed organic field-effect transistors

    Li, Ruipeng

    2012-09-04

    A new way to investigate and control the growth of solution-cast thin films is presented. The combination of in situ quartz crystal microbalance measurements with dissipation capabilities (QCM-D) and in situ grazing-incidence wide-angle X-ray scattering (GIWAXS) in an environmental chamber provides unique quantitative insights into the time-evolution of the concentration of the solution, the onset of nucleation, and the mode of growth of the organic semiconductor under varied drying conditions. It is demonstrated that careful control over the kinetics of solution drying enhances carrier transport significantly by promoting phase transformation predominantly via heterogeneous nucleation and sustained surface growth of a highly lamellar structure at the solid-liquid interface at the expense of homogeneous nucleation. A new way to investigate and control the growth of drop-cast thin films is presented. The solution-processing of small-molecule thin films of TIPS-pentacene is investigated using time-resolved techniques to reveal the mechanisms of nucleation and growth leading to solid film formation. By tuning the drying speed of the solution, the balance between surface and bulk growth modes is altered, thereby controlling the lamellar formation and tuning the carrier mobility in organic field-effect transistors Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. Effect of Vertical Annealing on the Nitrogen Dioxide Response of Organic Thin Film Transistors

    Sihui Hou

    2018-03-01

    Full Text Available Nitrogen dioxide (NO2 sensors based on organic thin-film transistors (OTFTs were fabricated by conventional annealing (horizontal and vertical annealing processes of organic semiconductor (OSC films. The NO2 responsivity of OTFTs to 15 ppm of NO2 is 1408% under conditions of vertical annealing and only 72% when conventional annealing is applied. Moreover, gas sensors obtained by vertical annealing achieve a high sensing performance of 589% already at 1 ppm of NO2, while showing a preferential response to NO2 compared with SO2, NH3, CO, and H2S. To analyze the mechanism of performance improvement of OTFT gas sensors, the morphologies of 6,13-bis(triisopropylsilylethynyl-pentacene (TIPS-pentacene films were characterized by atomic force microscopy (AFM in tapping mode. The results show that, in well-aligned TIPS-pentacene films, a large number of effective grain boundaries inside the conducting channel contribute to the enhancement of NO2 gas sensing performance.

  18. Sensing of EGTA Mediated Barrier Tissue Disruption with an Organic Transistor

    Scherrine Tria

    2013-01-01

    Full Text Available Barrier tissue protects the body against external factors by restricting the passage of molecules. The gastrointestinal epithelium is an example of barrier tissue with the primary purpose of allowing the passage of ions and nutrients, while restricting the passage of pathogens and toxins. It is well known that the loss of barrier function can be instigated by a decrease in extracellular calcium levels, leading to changes in protein conformation and an increase in paracellular transport. In this study, ethylene glycol-bis(beta-aminoethyl ether-N,N,N',N'-tetra acetic acid (EGTA, a calcium chelator, was used to disrupt the gastrointestinal epithelial barrier. The effect of EGTA on barrier tissue was monitored by a novel label-free method based on an organic electrochemical transistor (OECT integrated with living cells and validated against conventional methods for measuring barrier tissue integrity. We demonstrate that the OECT can detect breaches in barrier tissue upon exposure to EGTA with the same sensitivity as existing methods but with increased temporal resolution. Due to the potential of low cost processing techniques and the flexibility in design associated with organic electronics, the OECT has great potential for high-throughput, disposable sensing and diagnostics.

  19. Graphene-based electrodes for enhanced organic thin film transistors based on pentacene.

    Basu, Sarbani; Lee, Mu Chen; Wang, Yeong-Her

    2014-08-21

    This paper presents 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene) and pentacene-based organic thin film transistors (OTFTs) with monolayer graphene source-drain (S-D) electrodes. The electrodes are patterned using conventional photolithographic techniques combined with reactive ion etching. The monolayer graphene film grown by chemical vapor deposition on Cu foil was transferred on a Si dioxide surface using a polymer-supported transfer method to fabricate bottom-gate, bottom-contact OTFTs. The pentacene OTFTs with graphene S-D contacts exhibited superior performance with a mobility of 0.1 cm(2) V(-1) s(-1) and an on-off ratio of 10(5) compared with OTFTs with Au-based S-D contacts, which had a mobility of 0.01 cm(2) V(-1) s(-1) and an on-off ratio of 10(3). The crystallinity, grain size, and microscopic defects (or the number of layers of graphene films) of the TIPS-pentacene/pentacene films were analyzed by X-ray diffraction spectroscopy, atomic force microscopy, and Raman spectroscopy, respectively. The feasibility of using graphene as an S-D electrode in OTFTs provides an alternative material with high carrier injection efficiency, chemical stability, and excellent interface properties with organic semiconductors, thus exhibiting improved device performance of C-based electronic OTFTs at a reduced cost.

  20. Roll-to-roll compatible organic thin film transistor manufacturing technique by printing, lamination, and laser ablation

    Hassinen, Tomi; Ruotsalainen, Teemu; Laakso, Petri; Penttilä, Raimo; Sandberg, Henrik G.O.

    2014-01-01

    We present roll-to-roll printing compatible techniques for manufacturing organic thin film transistors using two separately processed foils that are laminated together. The introduction of heat-assisted lamination opens up possibilities for material and processing combinations. The lamination of two separately processed substrates together will allow usage of pre-patterned electrodes on both substrates and materials with non-compatible solvents. Also, the surface microstructure is formed differently when laminating dry films together compared to film formation from liquid phase. Demonstrator transistors, inverters and ring oscillators were produced using lamination techniques. Finally, a roll-to-roll compatible lamination concept is proposed where also the source and drain electrodes are patterned by laser ablation. The demonstrator transistors have shown very good lifetime in air, which is contributed partly to the good material combination and partly to the enhanced interface formation in heat-assisted lamination process. - Highlights: • A roll-to-roll compatible lamination technique for printed electronics is proposed. • Laser ablation allows highly defined metal top and bottom electrodes. • Method opens up processing possibilities for incompatible materials and solvents. • Shearing forces may enhance molecular orientation and packing. • An air stable polymer transistor is demonstrated with a lifetime of years

  1. TH-CD-201-12: Preliminary Evaluation of Organic Field Effect Transistors as Radiation Detectors

    Syme, A [Nova Scotia Cancer Centre, Halifax, Nova Scotia (Canada); Lin, H; Rubio-Sanchez, J; Perepichka, D [McGill University, Montreal, QC (Canada)

    2016-06-15

    Purpose: To fabricate organic field effect transistors (OFETs) and evaluate their performance before and after exposure to ionizing radiation. To determine if OFETs have potential to function as radiation dosimeters. Methods: OFETs were fabricated on both Si/SiO{sub 2} wafers and flexible polymer substrates using standard processing techniques. Pentacene was used as the organic semiconductor material and the devices were fabricated in a bottom gate configuration. Devices were irradiated using an orthovoltage treatment unit (120 kVp x-rays). Threshold voltage values were measured with the devices in saturation mode and quantified as a function of cumulative dose. Current-voltage characteristics of the devices were measured using a Keithley 2614 SourceMeter SMU Instrument. The devices were connected to the reader but unpowered during irradiations. Results: Devices fabricated on Si/SiO2 wafers demonstrated excellent linearity (R{sup 2} > 0.997) with threshold voltages that ranged between 15 and 36 V. Devices fabricated on a flexible polymer substrate had substantially smaller threshold voltages (∼ 4 – 8 V) and slightly worse linearity (R{sup 2} > 0.98). The devices demonstrated excellent stability in I–V characteristics over a large number (>2000) cycles. Conclusion: OFETs have demonstrated excellent potential in radiation dosimetry applications. A key advantage of these devices is their composition, which can be substantially more tissue-equivalent at low photon energies relative to many other types of radiation detector. In addition, fabrication of organic electronics can employ techniques that are faster, simpler and cheaper than conventional silicon-based devices. These results support further development of organic electronic devices for radiation detection purposes. Funding Support, Disclosures, and Conflict of Interest: This work was funded by the Natural Sciences and Engineering Research Council of Canada.

  2. Large-area formation of self-aligned crystalline domains of organic semiconductors on transistor channels using CONNECT

    Park, Steve; Giri, Gaurav; Shaw, Leo; Pitner, Gregory; Ha, Jewook; Koo, Ja Hoon; Gu, Xiaodan; Park, Joonsuk; Lee, Tae Hoon; Nam, Ji Hyun; Hong, Yongtaek; Bao, Zhenan

    2015-01-01

    The electronic properties of solution-processable small-molecule organic semiconductors (OSCs) have rapidly improved in recent years, rendering them highly promising for various low-cost large-area electronic applications. However, practical applications of organic electronics require patterned and precisely registered OSC films within the transistor channel region with uniform electrical properties over a large area, a task that remains a significant challenge. Here, we present a technique termed “controlled OSC nucleation and extension for circuits” (CONNECT), which uses differential surface energy and solution shearing to simultaneously generate patterned and precisely registered OSC thin films within the channel region and with aligned crystalline domains, resulting in low device-to-device variability. We have fabricated transistor density as high as 840 dpi, with a yield of 99%. We have successfully built various logic gates and a 2-bit half-adder circuit, demonstrating the practical applicability of our technique for large-scale circuit fabrication. PMID:25902502

  3. Electronic Detection of DNA Hybridization by Coupling Organic Field-Effect Transistor-Based Sensors and Hairpin-Shaped Probes

    Corrado Napoli

    2018-03-01

    Full Text Available In this paper, the electronic transduction of DNA hybridization is presented by coupling organic charge-modulated field-effect transistors (OCMFETs and hairpin-shaped probes. These probes have shown interesting properties in terms of sensitivity and selectivity in other kinds of assays, in the form of molecular beacons (MBs. Their integration with organic-transistor based sensors, never explored before, paves the way to a new class of low-cost, easy-to-use, and portable genetic sensors with enhanced performances. Thanks to the peculiar characteristics of the employed sensor, measurements can be performed at relatively high ionic strengths, thus optimizing the probes’ functionality without affecting the detection ability of the device. A complete electrical characterization of the sensor is reported, including calibration with different target concentrations in the measurement environment and selectivity evaluation. In particular, DNA hybridization detection for target concentration as low as 100 pM is demonstrated.

  4. Low-voltage polymer/small-molecule blend organic thin-film transistors and circuits fabricated via spray deposition

    Hunter, By Simon; Anthopoulos, Thomas D., E-mail: t.anthopoulos@ic.ac.uk [Department of Physics and Centre for Plastic Electronics, Imperial College London, South Kensington SW7 2AZ (United Kingdom); Ward, Jeremy W.; Jurchescu, Oana D. [Department of Physics, Wake Forest University, Winston-Salem, North Carolina 27109 (United States); Payne, Marcia M.; Anthony, John E. [Department of Chemistry, University of Kentucky, Lexington, Kentucky 40506 (United States)

    2015-06-01

    Organic thin-film electronics have long been considered an enticing candidate in achieving high-throughput manufacturing of low-power ubiquitous electronics. However, to achieve this goal, more work is required to reduce operating voltages and develop suitable mass-manufacture techniques. Here, we demonstrate low-voltage spray-cast organic thin-film transistors based on a semiconductor blend of 2,8-difluoro- 5,11-bis (triethylsilylethynyl) anthradithiophene and poly(triarylamine). Both semiconductor and dielectric films are deposited via successive spray deposition in ambient conditions (air with 40%–60% relative humidity) without any special precautions. Despite the simplicity of the deposition method, p-channel transistors with hole mobilities of >1 cm{sup 2}/Vs are realized at −4 V operation, and unipolar inverters operating at −6 V are demonstrated.

  5. Laser printed organic semiconductor PQT-12 for bottom-gate organic thin-film transistors: Fabrication and characterization

    Makrygianni, M. [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); National Technical University of Athens, Electrical and Computer Engineering Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Ainsebaa, A. [Ecole Nationale Supérieure des Mines de Saint-Etienne, Department of Flexible Electronics, CMP-EMSE, MOC, 13541 Gardanne (France); Nagel, M. [EMPA Swiss Federal Lab. for Materials Science and Technology, Laboratory for Functional Polymers, Überlandstrasse 129, 8600 Dubendorf (Switzerland); Sanaur, S. [Ecole Nationale Supérieure des Mines de Saint-Etienne, Department of Flexible Electronics, CMP-EMSE, MOC, 13541 Gardanne (France); Raptis, Y.S. [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Zergioti, I., E-mail: zergioti@central.ntua.gr [National Technical University of Athens, Physics Department, Iroon Polytehneiou 9, 15780 Zografou (Greece); Tsamakis, D. [National Technical University of Athens, Electrical and Computer Engineering Department, Iroon Polytehneiou 9, 15780 Zografou (Greece)

    2016-12-30

    Highlights: • Smooth printing of semiconducting π-conjugated polymer patterns for BG-BC OTFTs. • Well-ordering of PQT-12 when diluted in a high-boiling-point solvent yielding good interface properties. • No significant change in polymer chain orientation observed between LIFT printed patterns. • Reliable solid phase printing technique for thin, organic large area electronics applications, in a well-defined manner. - Abstract: In this work, we report on the effect of laser printed Poly (3,3‴-didodecyl quarter thiophene) on its optical, structural and electrical properties for bottom-gate/bottom-contact organic thin-film transistors applications. This semiconducting π-conjugated polymer was solution-deposited (spin-coated) on a donor substrate and transferred by means of solid phase laser-induced forward transfer (LIFT) technique on SiO{sub 2}/Si receiver substrates to form the active material. This article presents a detailed study of the electrical properties of the fabricated transistors by measuring the parasitic resistances for gold (Au) and platinum (Pt) as source-drain electrodes, for optimizing OTFTs in terms of contacts. In addition, X-ray diffraction patterns revealed that it is possible to control the polymer microstructure through the choice of solvent. Also, no significant change in polymer chain orientation was observed between two printed patterns at 90 and 130 mJ/cm{sup 2} as confirmed by Raman spectra. The results demonstrate hole mobility values of (2.6 ± 1.3) × 10{sup −2} cm{sup 2}/Vs, and lower parasitic resistance for dielectric surface roughness around 1.2 nm and Pt electrodes. Higher performances are correlated to i) the well-ordering of PQT-12 surface when a high-boiling-point solvent is used and ii) the less limitating Pt source/drain electrodes. This analytical study proves that solid phase LIFT printing is a reliable technology for the fabrication of thin, organic large area electronics in a well-defined manner.

  6. Laser printed organic semiconductor PQT-12 for bottom-gate organic thin-film transistors: Fabrication and characterization

    Makrygianni, M.; Ainsebaa, A.; Nagel, M.; Sanaur, S.; Raptis, Y.S.; Zergioti, I.; Tsamakis, D.

    2016-01-01

    Highlights: • Smooth printing of semiconducting π-conjugated polymer patterns for BG-BC OTFTs. • Well-ordering of PQT-12 when diluted in a high-boiling-point solvent yielding good interface properties. • No significant change in polymer chain orientation observed between LIFT printed patterns. • Reliable solid phase printing technique for thin, organic large area electronics applications, in a well-defined manner. - Abstract: In this work, we report on the effect of laser printed Poly (3,3‴-didodecyl quarter thiophene) on its optical, structural and electrical properties for bottom-gate/bottom-contact organic thin-film transistors applications. This semiconducting π-conjugated polymer was solution-deposited (spin-coated) on a donor substrate and transferred by means of solid phase laser-induced forward transfer (LIFT) technique on SiO_2/Si receiver substrates to form the active material. This article presents a detailed study of the electrical properties of the fabricated transistors by measuring the parasitic resistances for gold (Au) and platinum (Pt) as source-drain electrodes, for optimizing OTFTs in terms of contacts. In addition, X-ray diffraction patterns revealed that it is possible to control the polymer microstructure through the choice of solvent. Also, no significant change in polymer chain orientation was observed between two printed patterns at 90 and 130 mJ/cm"2 as confirmed by Raman spectra. The results demonstrate hole mobility values of (2.6 ± 1.3) × 10"−"2 cm"2/Vs, and lower parasitic resistance for dielectric surface roughness around 1.2 nm and Pt electrodes. Higher performances are correlated to i) the well-ordering of PQT-12 surface when a high-boiling-point solvent is used and ii) the less limitating Pt source/drain electrodes. This analytical study proves that solid phase LIFT printing is a reliable technology for the fabrication of thin, organic large area electronics in a well-defined manner.

  7. Electronic properties of dioctylterthiophene-based organic thin-film transistors: A Kelvin probe force microscopy study

    Afsharimani, N.; Nysten, B.

    2013-01-01

    It appeared in the past decades that semi-conducting organic liquid crystals could be used as the active layer in organic thin film transistors (OTFTs). They can be processed by simple methods such as inkjet printing, which paves the way to applications for cheap plastic electronics such as electronic tags, biosensors, and flexible screens. However, the measured field-effect mobility in these OTFTs is relatively low compared to inorganic devices. Generally, such low field-effect mobility values result from extrinsic effects such as grain boundaries or imperfect interfaces with source and drain electrodes. It has been shown that reducing the number of grain boundaries between the source and drain electrodes improves the field effect mobility. Therefore, it is important to understand the transport mechanisms by studying the local structure and electronic properties of organic thin films within the channel and at the interfaces with source and drain electrodes in order to improve the field-effect mobility in OTFTs. Kelvin probe force microscopy (KPFM) is an ideal tool for that purpose since it allows to simultaneously investigate the local structure and the electrical potential distribution in electronic devices. In this work, the structure and the electrical properties of OTFTs based on dioctylterthiophene (DOTT) were studied. The transistors were fabricated by spin-coating DOTT on the transistor structures with untreated and treated (silanized) channel silicon oxide. The potential profiles across the channel and at the metal-electrode interfaces were measured by KPFM. The effect of surface treatment on the electrical properties, charge trapping phenomenon and hysteresis effects is demonstrated and analyzed. - Highlights: • Kelvin probe force microscopy study of organic thin film transistors. • Cost and time savings by using solution processable molecules as active layers. • Smaller crystals and less charge trapping effects in silanized devices. • Decrement

  8. Research Update: Electrical monitoring of cysts using organic electrochemical transistors a

    Huerta, M.; Rivnay, J.; Ramuz, M.; Hama, A.; Owens, R. M.

    2015-03-01

    Organotypic three-dimensional (3D) cell culture models have the potential to act as surrogate tissues in vitro, both for basic research and for drug discovery/toxicology. 3D cultures maintain not only 3D architecture but also cell-cell and cell extracellular matrix interactions, particularly when grown in cysts or spheroids. Characterization of cell cultures grown in 3D formats, however, provides a significant challenge for cell biologists due to the incompatibility of these structures with commonly found optical or electronic monitoring systems. Electronic impedance spectroscopy is a cell culture monitoring technique with great potential; however, it has not been possible to integrate 3D cultures with commercially available systems to date. Cyst-like 3D cultures are particularly challenging due to their small size and difficulty in manipulation. Herein, we demonstrate isolation of cyst-like 3D cultures by capillarity and subsequent integration with the organic electrochemical transistor for monitoring the integrity of these structures. We show not only that this versatile device can be adapted to the cyst format for measuring resistance and, therefore, the quality of the cysts, but also can be used for quantitative monitoring of the effect of toxic compounds on cells in a 3D format. The ability to quantitatively predict effects of drugs on 3D cultures in vitro has large future potential for the fields of drug discovery and toxicology.

  9. Photo-response behavior of organic transistors based on thermally annealed semiconducting diketopyrrolopyrrole core

    Tarsoly, Gergely; Pyo, Seungmoon

    2018-06-01

    We report the opto-electrical response of organic field-effect transistors based on a thin-film of a semiconducting diketopyrrolopyrrole (DPP) core, a popular building block for molecular semiconductors, and a polymeric gate dielectric. The thin-film of the DPP core was thermally annealed at different temperatures under N2 atmosphere to investigate the relationship between the annealing temperature and the electrical properties of the device. The results showed that the annealing process induces morphological changes in the thin film, and properly controlling the thermal annealing conditions can enhance the device performance. In addition, we also investigated in detail the photo-response behaviors by analyzing the responsivity (R) of the device with the optimally annealed DPP-core thin film under two light illumination conditions by considering the irradiance absorbed by the thin film instead of the total irradiance of the light source. We found that the proposed model could lead to a light-source-independent description of the photo-response behavior of the device, and which can be used for other applications.

  10. Electrical characterization of reduced graphene oxide (rGO) on organic thin film transistor (OTFT)

    Musa, Nurhazwani; Halim, Nurul Farhanah Ab.; Ahmad, Mohd Noor; Zakaria, Zulkhairi; Hashim, Uda

    2017-03-01

    A green method and eco-friendly solution were used to chemically reduce graphene oxide (GO) to graphene using green reductant. In this study, graphene oxide (GO) were prepared by using Tours method. Then, reduced graphene oxides (rGO) were prepared by using three typical reduction agents: L-ascorbic acid (L-AA), formamidinesulfinic acid (FAS) and sodium sulfite (Na2SO3). The reduced materials were characterized by Fourier transform infrared spectroscopy (FTIR), Thermo gravimetric analysis (TGA) and X-ray diffraction (XRD). Graphene based organic thin film transistor (G-OTFT) was prepared by a spin coating and thermal evaporation technique. The electrical characterization of G-OTFT was analyzed by using semiconductor parameter analyzer (SPA). The G-OTFT devices show p-type semiconducting behaviour. This article focuses on the synthesis and reduction of graphene oxide using three different reductants in order to maximise its electrical conductivity. The rGO product demonstrated a good electrical conductivity performance with highly sensitivity sensor.

  11. Benzothienobenzothiophene-based conjugated oligomers as semiconductors for stable organic thin-film transistors.

    Yu, Han; Li, Weili; Tian, Hongkun; Wang, Haibo; Yan, Donghang; Zhang, Jingping; Geng, Yanhou; Wang, Fosong

    2014-04-09

    Two benzothienobenzothiophene (BTBT)-based conjugated oligomers, i.e., 2,2'-bi[1]benzothieno[3,2-b][1]benzothiophene (1) and 5,5'-bis([1]benzothieno[3,2-b][1]benzothiophen-2-yl)-2,2'-bithiophene (2), were prepared and characterized. Both oligomers exhibit excellent thermal stability, with 5% weight-loss temperatures (T(L)) above 370 °C; no phase transition was observed before decomposition. The highest occupied molecular orbital (HOMO) levels of 1 and 2 are -5.3 and -4.9 eV, respectively, as measured by ultraviolet photoelectron spectroscopy. Thin-film X-ray diffraction and atomic force microscopy characterizations indicate that both oligomers form highly crystalline films with large domain sizes on octadecyltrimethoxysilane-modified substrates. Organic thin-film transistors with top-contact and bottom-gate geometry based on 1 and 2 exhibited mobilities up to 2.12 cm(2)/V·s for 1 and 1.39 cm(2)/V·s for 2 in an ambient atmosphere. 1-based devices exhibited great air and thermal stabilities, as evidenced by the slight performance degradation after 2 months of storage under ambient conditions and after thermal annealing at temperatures below 250 °C.

  12. A tone analyzer based on a piezoelectric polymer and organic thin film transistors.

    Hsu, Yu-Jen; Kymissis, Ioannis

    2012-12-01

    A tone analyzer is demonstrated using a distributed resonator architecture on a tensioned piezoelectric polyvinyledene diuoride (PVDF) sheet. This sheet is used as both the resonator and detection element. Two architectures are demonstrated; one uses distributed, directly addressed elements as a proof of concept, and the other integrates organic thin film transistor-based transimpedance amplifiers directly with the PVDF to convert the piezoelectric charge signal into a current signal. The PVDF sheet material is instrumented along its length, and the amplitude response at 15 sites is recorded and analyzed as a function of the frequency of excitation. The determination of the dominant component of an incoming tone is demonstrated using linear system decomposition of the time-averaged response of the sheet and is performed without any time domain analysis. This design allows for the determination of the spectral composition of a sound using the mechanical signal processing provided by the amplitude response and eliminates the need for time-domain downstream signal processing of the incoming signal.

  13. 2D negative capacitance field-effect transistor with organic ferroelectrics

    Zhang, Heng; Chen, Yan; Ding, Shijin; Wang, Jianlu; Bao, Wenzhong; Zhang, David Wei; Zhou, Peng

    2018-06-01

    In the past fifty years, complementary metal-oxide-semiconductor integrated circuits have undergone significant development, but Moore’s law will soon come to an end. In order to break through the physical limit of Moore’s law, 2D materials have been widely used in many electronic devices because of their high mobility and excellent mechanical flexibility. And the emergence of a negative capacitance field-effect transistor (NCFET) could not only break the thermal limit of conventional devices, but reduce the operating voltage and power consumption. This paper demonstrates a 2D NCFET that treats molybdenum disulfide as a channel material and organic P(VDF-TrFE) as a gate dielectric directly. This represents a new attempt to prepare NCFETs and produce flexible electronic devices. It exhibits a 106 on-/off-current ratio. And the minimum subthreshold swing (SS) of the 21 mV/decade and average SS of the 44 mV/decade in four orders of magnitude of drain current can also be observed at room temperature of 300 K.

  14. Liquid electrolyte positioning along the device channel influences the operation of Organic Electro-Chemical Transistors

    D'angelo, Pasquale

    2014-11-01

    In this work, we show the influence of the liquid electrolyte adsorption by porous films made of poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate), PEDOT:PSS, on the operation of an Organic Electro-Chemical Transistor with an active channel based on these polymeric films. In particular, the effect of film hydration on device performance is evaluated by studying its electrical response as a function of the spatial position between the electrolyte and the channel electrodes. This is done by depositing a PEDOT:PSS film on a super-hydrophobic surface aimed at controlling the electrolyte confinement next to the electrodes. The device response shows that the confinement of ionic liquids near to the drain electrode results in a worsening of the current modulation. This result has been interpreted in the light of studies dealing with the transport of ions in semiconducting polymers, indicating that the electrolyte adsorption by the polymeric film implies the formation of liquid pathways inside its bulk. These pathways, in particular, affect the device response because they are able to assist the drift of ionic species in the electrolyte towards the drain electrode. The effect of electrolyte adsorption on the device operation is confirmed by means of moving-front measurements, and is related to the reproducibility of the device operation curves by measuring repeatedly its electrical response.

  15. A Disposable paper breathalyzer with an alcohol sensing organic electrochemical transistor

    Bihar, Eloїse; Deng, Yingxin; Miyake, Takeo; Saadaoui, Mohamed; Malliaras, George G.; Rolandi, Marco

    2016-06-01

    Breathalyzers estimate Blood Alcohol Content (BAC) from the concentration of ethanol in the breath. Breathalyzers are easy to use but are limited either by their high price and by environmental concerns, or by a short lifetime and the need for continuous recalibration. Here, we demonstrate a proof-of-concept disposable breathalyzer using an organic electrochemical transistor (OECT) modified with alcohol dehydrogenase (ADH) as the sensor. The OECT is made with the conducting polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and is printed on paper. ADH and its cofactor nicotinamide adenine dinucleotide (NAD+) are immobilized onto the OECT with an electrolyte gel. When the OECT-breathalyzer is exposed to ethanol vapor, the enzymatic reaction of ADH and ethanol transforms NAD+ into NADH, which causes a decrease in the OECT source drain current. In this fashion, the OECT-breathalyzer easily detects ethanol in the breath equivalent to BAC from 0.01% to 0.2%. The use of a printed OECT may contribute to the development of breathalyzers that are disposable, ecofriendly, and integrated with wearable devices for real-time BAC monitoring.

  16. Universal diffusion-limited injection and the hook effect in organic thin-film transistors

    Liu, Chuan; Huseynova, Gunel; Xu, Yong; Long, Dang Xuan; Park, Won-Tae; Liu, Xuying; Minari, Takeo; Noh, Yong-Young

    2016-01-01

    The general form of interfacial contact resistance was derived for organic thin-film transistors (OTFTs) covering various injection mechanisms. Devices with a broad range of materials for contacts, semiconductors, and dielectrics were investigated and the charge injections in staggered OTFTs was found to universally follow the proposed form in the diffusion-limited case, which is signified by the mobility-dependent injection at the metal-semiconductor interfaces. Hence, real ohmic contact can hardly ever be achieved in OTFTs with low carrier concentrations and mobility, and the injection mechanisms include thermionic emission, diffusion, and surface recombination. The non-ohmic injection in OTFTs is manifested by the generally observed hook shape of the output conductance as a function of the drain field. The combined theoretical and experimental results show that interfacial contact resistance generally decreases with carrier mobility, and the injection current is probably determined by the surface recombination rate, which can be promoted by bulk-doping, contact modifications with charge injection layers and dopant layers, and dielectric engineering with high-k dielectric materials. PMID:27440253

  17. Direct visualization of polarization reversal of organic ferroelectric memory transistor by using charge modulated reflectance imaging

    Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2017-11-01

    By using the charge modulated reflectance (CMR) imaging technique, charge distribution in the pentacene organic field-effect transistor (OFET) with a ferroelectric gate insulator [P(VDF-TrFE)] was investigated in terms of polarization reversal of the P(VDF-TrFE) layer. We studied the polarization reversal process and the carrier spreading process in the OFET channel. The I-V measurement showed a hysteresis behavior caused by the spontaneous polarization of P(VDF-TrFE), but the hysteresis I-V curve changes depending on the applied drain bias, possibly due to the gradual shift of the polarization reversal position in the OFET channel. CMR imaging visualized the gradual shift of the polarization reversal position and showed that the electrostatic field formed by the polarization of P(VDF-TrFE) contributes to hole and electron injection into the pentacene layer and the carrier distribution is significantly dependent on the direction of the polarization. The polarization reversal position in the channel region is governed by the electrostatic potential, and it happens where the potential reaches the coercive voltage of P(VDF-TrFE). The transmission line model developed on the basis of the Maxwell-Wagner effect element analysis well accounts for this polarization reversal process in the OFET channel.

  18. Pulsed laser deposition of oxide gate dielectrics for pentacene organic field-effect transistors

    Yaginuma, S.; Yamaguchi, J.; Itaka, K.; Koinuma, H.

    2005-01-01

    We have fabricated Al 2 O 3 , LaAlO 3 (LAO), CaHfO 3 (CHO) and CaZrO 3 (CZO) thin films for the dielectric layers of field-effect transistors (FETs) by pulsed laser deposition (PLD). The films exhibited very smooth surfaces with root-mean-squares (rms) roughnesses of ∼1.3 A as evaluated by using atomic force microscopy (AFM). The breakdown electric fields of Al 2 O 3 , LAO, CHO and CZO films were 7, 6, 10 and 2 MV/cm, respectively. The magnitude of the leak current in each film was low enough to operate FET. We performed a comparative study of pentacene FET fabricated using these oxide dielectrics as gate insulators. High field-effect mobility of 1.4 cm 2 /V s and on/off current ratio of 10 7 were obtained in the pentacene FET using LAO gate insulating film. Use of the LAO films as gate dielectrics has been found to suppress the hysteresis of pentacene FET operations. The LAO films are relevant to the dielectric layer of organic FETs

  19. The application of orthogonal photolithography to micro-scale organic field effect transistors and complementary inverters on flexible substrate

    Jang, Jingon; Song, Younggul; Yoo, Daekyoung; Kim, Dongku; Lee, Hyungwoo; Hong, Seunghun; Lee, Takhee; Oh, Hyuntaek; Lee, Jin-Kyun

    2014-01-01

    Micro-scale pentacene organic field effect transistors (OFETs) were fabricated on a flexible poly(ethylene terephthalate) (PET) substrate. By applying a highly fluorinated developing solvents and its compatible photoresist materials, it has become possible to make the micro-scale patterning for organic devices using standard photolithography without damaging the underlying polymer layers. The flexible pentacene OFETs with 3 μm-sized channel length exhibited stable electrical characteristics under bent configurations and under a large number of repetitive bending cycles. Furthermore, we demonstrated micro-scale organic complementary inverters on a flexible PET substrate using p-type pentacene and n-type copper hexadecafluorophthalocyanine materials

  20. The application of orthogonal photolithography to micro-scale organic field effect transistors and complementary inverters on flexible substrate

    Jang, Jingon; Song, Younggul; Yoo, Daekyoung; Kim, Dongku; Lee, Hyungwoo; Hong, Seunghun; Lee, Takhee, E-mail: tlee@snu.ac.kr [Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 151-747 (Korea, Republic of); Oh, Hyuntaek; Lee, Jin-Kyun, E-mail: jkl36@inha.ac.kr [Department of Polymer Science and Engineering, Inha University, Incheon 402-751 (Korea, Republic of)

    2014-02-03

    Micro-scale pentacene organic field effect transistors (OFETs) were fabricated on a flexible poly(ethylene terephthalate) (PET) substrate. By applying a highly fluorinated developing solvents and its compatible photoresist materials, it has become possible to make the micro-scale patterning for organic devices using standard photolithography without damaging the underlying polymer layers. The flexible pentacene OFETs with 3 μm-sized channel length exhibited stable electrical characteristics under bent configurations and under a large number of repetitive bending cycles. Furthermore, we demonstrated micro-scale organic complementary inverters on a flexible PET substrate using p-type pentacene and n-type copper hexadecafluorophthalocyanine materials.

  1. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    Li, Feng

    2016-12-13

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  2. High-Performance Near-Infrared Phototransistor Based on n-Type Small-Molecular Organic Semiconductor

    Li, Feng; Chen, Yin; Ma, Chun; Buttner, Ulrich; Leo, Karl; Wu, Tao

    2016-01-01

    A solution-processed near-infrared (NIR) organic phototransistor (OPT) based on n-type organic small molecular material BODIPY-BF2 has been successfully fabricated. Its unprecedented performance, as well as its easy fabrication and good stability, mark this BODIPY-BF2 based OPT device as a very promising candidate for optoelectronic applications in the NIR regime.

  3. Electrical characterization of organic thin film transistors and alternative device architectures

    Newman, Christopher R.

    In the last 10--15 years, organic semiconductors have evolved from experimental curiosities into viable alternatives for practical applications involving large-area and low-cost electronics such as display backplanes, electronic paper, radio frequency identification (RFID) tags, and solar cells. Many of the initially-stated goals in this field have been achieved; organic semconductors have demonstrated performance comparable to or greater than amorphous silicon (a-Si), the entrenched technology for most of the applications listed above. At present, the major obstacles remaining to commercialization of devices based on organic semiconductors involve material stability, processing considerations and optimization of the other device components (e.g. metal contacts and dielectric materials). Despite these technical achievements, significant gaps remain in our understanding of the underlying transport physics in these devices. This thesis summarizes experiments performed on organic field-effect transistors (OFETs) in an attempt to address some of these knowledge gaps. The FET, in addition to being a very useful device for practical applications (such as the driving elements in pixel backplanes), is also a very flexible architecture from an experimental standpoint. The presence of a capacitively-coupled gate electrode allows the investigation of transport physics as a function of carrier concentration. For devices in which non-idealities (i.e. carrier traps) largely dictate the observed characteristics, this is a very useful feature. Although practical OFETs are fabricated as conventional single-gate structures on an organic thin film (OTFTs), more exotic structures can often provide insights that standard OTFTs cannot. Specifically, single-crystal OFETs allow the investigation of carrier transport in the absence of grain boundaries, and double-gated OTFTs facilitate the investigation and comparison of properties across two discrete interfaces. One of the remaining

  4. Towards Constraint-based High Performance Cloud System in the Process of Cloud Computing Adoption in an Organization

    Simalango, Mikael Fernandus; Kang, Mun-Young; Oh, Sangyoon

    2010-01-01

    Cloud computing is penetrating into various domains and environments, from theoretical computer science to economy, from marketing hype to educational curriculum and from R&D lab to enterprise IT infrastructure. Yet, the currently developing state of cloud computing leaves several issues to address and also affects cloud computing adoption by organizations. In this paper, we explain how the transition into the cloud can occur in an organization and describe the mechanism for transforming lega...

  5. Through thick and thin: tuning the threshold voltage in organic field-effect transistors.

    Martínez Hardigree, Josué F; Katz, Howard E

    2014-04-15

    Organic semiconductors (OSCs) constitute a class of organic materials containing densely packed, overlapping conjugated molecular moieties that enable charge carrier transport. Their unique optical, electrical, and magnetic properties have been investigated for use in next-generation electronic devices, from roll-up displays and radiofrequency identification (RFID) to biological sensors. The organic field-effect transistor (OFET) is the key active element for many of these applications, but the high values, poor definition, and long-term instability of the threshold voltage (V(T)) in OFETs remain barriers to realization of their full potential because the power and control circuitry necessary to compensate for overvoltages and drifting set points decrease OFET practicality. The drifting phenomenon has been widely observed and generally termed "bias stress." Research on the mechanisms responsible for this poor V(T) control has revealed a strong dependence on the physical order and chemical makeup of the interfaces between OSCs and adjacent materials in the OFET architecture. In this Account, we review the state of the art for tuning OFET performance via chemical designs and physical processes that manipulate V(T). This parameter gets to the heart of OFET operation, as it determines the voltage regimes where OFETs are either ON or OFF, the basis for the logical function of the devices. One obvious way to decrease the magnitude and variability of V(T) is to work with thinner and higher permittivity gate dielectrics. From the perspective of interfacial engineering, we evaluate various methods that we and others have developed, from electrostatic poling of gate dielectrics to molecular design of substituted alkyl chains. Corona charging of dielectric surfaces, a method for charging the surface of an insulating material using a constant high-voltage field, is a brute force means of shifting the effective gate voltage applied to a gate dielectric. A gentler and more

  6. The Use of Ferroelectrics and Dipeptides as Insulators in Organic Field-Effect Transistor Devices

    Knotts, Grant

    While the electrical transport characteristics of organic electronic devices are generally inferior to their inorganic counterparts, organic materials offer many advantages over inorganics. The materials used in organic devices can often be deposited using cheap and simple processing techniques such as spincoating, inkjet printing, or roll-to-roll processing; allow for large-scale, flexible devices; and can have the added benefits of being transparent or biodegradable. In this manuscript, we examine the role of solvents in the performance of pentacene-based devices using the ferroelectric copolymer polyvinylidene fluoride-trifluoroethylene (PVDF-TrFe) as a gate insulating layer. High dipole moment solvents, such as dimethyl sulfoxide, used to dissolve the copolymer for spincoating increase the charge carrier mobility in field-effect transistors (FETs) by nearly an order of magnitude as compared to lower dipole moment solvents. The polarization in Al/PVDF-TrFe/Au metal-ferroelectric-metal devices also shows an increase in remnant polarization of 20% in the sample using dimethyl sulfoxide as the solvent for the ferroelectric. Interestingly, at low applied electric fields of 100 MV/m a remnant polarization is seen in the high dipole moment device that is nearly 3.5 times larger than the value observed in the lower dipole moment samples, suggesting that the degree of dipolar order is higher at low operating voltages for the high dipole moment device. We will also discuss the use of peptide-based nanostructures derived from natural amino acids as building blocks for biocompatible devices. These peptides can be used in a bottom-up process without the need for expensive lithography. Thin films of L,L-diphenylalanine micro/nanostructures (FF-MNSs) were used as the dielectric layer in pentacene-based FETs and metal-insulator-semiconductor diodes both in bottom-gate and top-gate structures. It is demonstrated that the FFMNSs can be functionalized for detection of enzyme

  7. In situ characterization of the film coverage and the charge transport in the alkylated-organic thin film transistor

    Watanabe, Takeshi; Koganezawa, Tomoyuki; Kikuchi, Mamoru; Muraoka, Hiroki; Ogawa, Satoshi; Yoshimoto, Noriyuki; Hirosawa, Ichiro

    2018-03-01

    We propose an in situ experimental method of investigating the correlations of the film coverage of the organic semiconductor layers and charge transport properties of organic thin film transistors during vacuum deposition. The coverage of each monolayer was estimated using the intensity of off-specular diffuse scattering and diffraction. Experimental data were obtained from the in situ measurements of two-dimensional grazing incidence X-ray scattering and charge transport. The source-drain current increased over the film coverage of the first monolayer (= 0.48). This is in agreement with the critical percolation coverage, indicating that the conductivities of the first and second monolayers are different.

  8. Microscopic gate-modulation imaging of charge and field distribution in polycrystalline organic transistors

    Matsuoka, Satoshi; Tsutsumi, Jun'ya; Kamata, Toshihide; Hasegawa, Tatsuo

    2018-04-01

    In this work, a high-resolution microscopic gate-modulation imaging (μ-GMI) technique is successfully developed to visualize inhomogeneous charge and electric field distributions in operating organic thin-film transistors (TFTs). We conduct highly sensitive and diffraction-limit gate-modulation sensing for acquiring difference images of semiconducting channels between at gate-on and gate-off states that are biased at an alternate frequency of 15 Hz. As a result, we observe unexpectedly inhomogeneous distribution of positive and negative local gate-modulation (GM) signals at a probe photon energy of 1.85 eV in polycrystalline pentacene TFTs. Spectroscopic analyses based on a series of μ-GMI at various photon energies reveal that two distinct effects appear, simultaneously, within the polycrystalline pentacene channel layers: Negative GM signals at 1.85 eV originate from the second-derivative-like GM spectrum which is caused by the effect of charge accumulation, whereas positive GM signals originate from the first-derivative-like GM spectrum caused by the effect of leaked gate fields. Comparisons with polycrystalline morphologies indicate that grain centers are predominated by areas with high leaked gate fields due to the low charge density, whereas grain edges are predominantly high-charge-density areas with a certain spatial extension as associated with the concentrated carrier traps. Consequently, it is reasonably understood that larger grains lead to higher device mobility, but with greater inhomogeneity in charge distribution. These findings provide a clue to understand and improve device characteristics of polycrystalline TFTs.

  9. Charge transport properties of carbazole dendrimers in organic field-effect transistors

    Mutkins, Karyn; Chen, Simon S. Y.; Aljada, Muhsen; Powell, Ben J.; Olsen, Seth; Burn, Paul L.; Meredith, Paul

    2011-10-01

    We report three generations of p-type dendrimer semiconductors comprised of spirobifluorene cores, carbazole branching units and fluorene surface groups for use in organic field-effect transistors (OFETs). The group of dendrimers are defined by their generation and noted as SBF-(Gx)2, where x is the generation. Top contact-bottom gate OFETs were fabricated by spin-coating the dendrimers onto an n-octyltrichlorosilane (OTS) passivated silicon dioxide surface. The dendrimer films were found to be amorphous. The highest mobility was measured for the first generation dendrimer (SBF-(G1)2), which had an average mobility of (6.6 +/- 0.2) × 10-5 cm2/V s and an ON/OFF ratio of 3.0 × 104. As the generation of the dendrimer was increased there was only a slight decrease in the measured mobility in spite of the significantly different molecular sizes of the dendrimers. The mobility of SBF-(G3)2, which had a hydrodynamic radius almost twice of SBF-(G1)2, still had an average mobility of (4.7 +/- 0.6) × 10-5 cm2/V s and an ON/OFF ratio of 2.7 × 103. Density functional theory calculations showed that the highest occupied molecular orbital was distributed over the core and carbazole units meaning that both intra- and intermolecular charge transfer could occur enabling the hole mobility to remain essentially constant even though the dendrimers would pack differently in the solid-state.

  10. Nanosecond Time-Resolved Microscopic Gate-Modulation Imaging of Polycrystalline Organic Thin-Film Transistors

    Matsuoka, Satoshi; Tsutsumi, Jun'ya; Matsui, Hiroyuki; Kamata, Toshihide; Hasegawa, Tatsuo

    2018-02-01

    We develop a time-resolved microscopic gate-modulation (μ GM ) imaging technique to investigate the temporal evolution of the channel current and accumulated charges in polycrystalline pentacene thin-film transistors (TFTs). A time resolution of as high as 50 ns is achieved by using a fast image-intensifier system that could amplify a series of instantaneous optical microscopic images acquired at various time intervals after the stepped gate bias is switched on. The differential images obtained by subtracting the gate-off image allows us to acquire a series of temporal μ GM images that clearly show the gradual propagation of both channel charges and leaked gate fields within the polycrystalline channel layers. The frontal positions for the propagations of both channel charges and leaked gate fields coincide at all the time intervals, demonstrating that the layered gate dielectric capacitors are successively transversely charged up along the direction of current propagation. The initial μ GM images also indicate that the electric field effect is originally concentrated around a limited area with a width of a few micrometers bordering the channel-electrode interface, and that the field intensity reaches a maximum after 200 ns and then decays. The time required for charge propagation over the whole channel region with a length of 100 μ m is estimated at about 900 ns, which is consistent with the measured field-effect mobility and the temporal-response model for organic TFTs. The effect of grain boundaries can be also visualized by comparison of the μ GM images for the transient and the steady states, which confirms that the potential barriers at the grain boundaries cause the transient shift in the accumulated charges or the transient accumulation of additional charges around the grain boundaries.

  11. Concentric-Electrode Organic Electrochemical Transistors: Case Study for Selective Hydrazine Sensing

    Sébastien Pecqueur

    2017-03-01

    Full Text Available We report on hydrazine-sensing organic electrochemical transistors (OECTs with a design consisting of concentric annular electrodes. The design engineering of these OECTs was motivated by the great potential of using OECT sensing arrays in fields such as bioelectronics. In this work, poly(3,4-ethylenedioxythiophene:poly(styrenesulfonate (PEDOT:PSS-based OECTs have been studied as aqueous sensors that are specifically sensitive to the lethal hydrazine molecule. These amperometric sensors have many relevant features for the development of hydrazine sensors, such as a sensitivity down to 10−5 M of hydrazine in water, an order of magnitude higher selectivity for hydrazine than for nine other water-soluble common analytes, the capability to entirely recover its base signal after water flushing, and a very low operation voltage. The specificity for hydrazine to be sensed by our OECTs is caused by its catalytic oxidation at the gate electrode, and enables an increase in the output current modulation of the devices. This has permitted the device-geometry study of the whole series of 80 micrometric OECT devices with sub-20-nm PEDOT:PSS layers, channel lengths down to 1 µm, and a specific device geometry of coplanar and concentric electrodes. The numerous geometries unravel new aspects of the OECT mechanisms governing the electrochemical sensing behaviours of the device—more particularly the effect of the contacts which are inherent at the micro-scale. By lowering the device cross-talk, micrometric gate-integrated radial OECTs shall contribute to the diminishing of the readout invasiveness and therefore further promote the development of OECT biosensors.

  12. Radical covalent organic frameworks: a general strategy to immobilize open-accessible polyradicals for high-performance capacitive energy storage.

    Xu, Fei; Xu, Hong; Chen, Xiong; Wu, Dingcai; Wu, Yang; Liu, Hao; Gu, Cheng; Fu, Ruowen; Jiang, Donglin

    2015-06-01

    Ordered π-columns and open nanochannels found in covalent organic frameworks (COFs) could render them able to store electric energy. However, the synthetic difficulty in achieving redox-active skeletons has thus far restricted their potential for energy storage. A general strategy is presented for converting a conventional COF into an outstanding platform for energy storage through post-synthetic functionalization with organic radicals. The radical frameworks with openly accessible polyradicals immobilized on the pore walls undergo rapid and reversible redox reactions, leading to capacitive energy storage with high capacitance, high-rate kinetics, and robust cycle stability. The results suggest that channel-wall functional engineering with redox-active species will be a facile and versatile strategy to explore COFs for energy storage. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Low-voltage operating flexible ferroelectric organic field-effect transistor nonvolatile memory with a vertical phase separation P(VDF-TrFE-CTFE)/PS dielectric

    Xu, Meili; Xiang, Lanyi; Xu, Ting; Wang, Wei; Xie, Wenfa; Zhou, Dayu

    2017-10-01

    Future flexible electronic systems require memory devices combining low-power operation and mechanical bendability. However, high programming/erasing voltages, which are universally needed to switch the storage states in previously reported ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memories (NVMs), severely prevent their practical applications. In this work, we develop a route to achieve a low-voltage operating flexible Fe-OFET NVM. Utilizing vertical phase separation, an ultrathin self-organized poly(styrene) (PS) buffering layer covers the surface of the ferroelectric polymer layer by one-step spin-coating from their blending solution. The ferroelectric polymer with a low coercive field contributes to low-voltage operation in the Fe-OFET NVM. The polymer PS contributes to the improvement of mobility, attributing to screening the charge scattering and decreasing the surface roughness. As a result, a high performance flexible Fe-OFET NVM is achieved at the low P/E voltages of ±10 V, with a mobility larger than 0.2 cm2 V-1 s-1, a reliable P/E endurance over 150 cycles, stable data storage retention capability over 104 s, and excellent mechanical bending durability with a slight performance degradation after 1000 repetitive tensile bending cycles at a curvature radius of 5.5 mm.

  14. The impact of carbon sp{sup 2} fraction of reduced graphene oxide on the performance of reduced graphene oxide contacted organic transistors

    Kang, Narae [Nanoscience Technology Center, University of Central Florida, 12424 Research Parkway, Suite 400, Orlando, Florida 32826 (United States); Department of Physics, University of Central Florida, 12424 Research Parkway, Suite 400, Orlando, Florida 32826 (United States); Khondaker, Saiful I., E-mail: saiful@ucf.edu [Nanoscience Technology Center, University of Central Florida, 12424 Research Parkway, Suite 400, Orlando, Florida 32826 (United States); Department of Physics, University of Central Florida, 12424 Research Parkway, Suite 400, Orlando, Florida 32826 (United States); School of Electrical Engineering and Computer Science, University of Central Florida, 12424 Research Parkway, Suite 400, Orlando, Florida 32826 (United States)

    2014-12-01

    One of the major bottlenecks in fabricating high performance organic field effect transistors (OFETs) is a large interfacial contact barrier between metal electrodes and organic semiconductors (OSCs) which makes the charge injection inefficient. Recently, reduced graphene oxide (RGO) has been suggested as an alternative electrode material for OFETs. RGO has tunable electronic properties and its conductivity can be varied by several orders of magnitude by varying the carbon sp{sup 2} fraction. However, whether the sp{sup 2} fraction of RGO in the electrode affects the performance of the fabricated OFETs is yet to be investigated. In this study, we demonstrate that the performance of OFETs with pentacene as OSC and RGO as electrode can be continuously improved by increasing the carbon sp{sup 2} fraction of RGO. When compared to control palladium electrodes, the mobility of the OFETs shows an improvement of ∼200% for 61% sp{sup 2} fraction RGO, which further improves to ∼500% for 80% RGO electrode. Similar improvements were also observed in current on-off ratio, on-current, and transconductance. Our study suggests that, in addition to π-π interaction at RGO/pentacene interface, the tunable electronic properties of RGO electrode have a significant role in OFETs performance.

  15. The impact of carbon sp2 fraction of reduced graphene oxide on the performance of reduced graphene oxide contacted organic transistors

    Kang, Narae; Khondaker, Saiful I.

    2014-01-01

    One of the major bottlenecks in fabricating high performance organic field effect transistors (OFETs) is a large interfacial contact barrier between metal electrodes and organic semiconductors (OSCs) which makes the charge injection inefficient. Recently, reduced graphene oxide (RGO) has been suggested as an alternative electrode material for OFETs. RGO has tunable electronic properties and its conductivity can be varied by several orders of magnitude by varying the carbon sp 2 fraction. However, whether the sp 2 fraction of RGO in the electrode affects the performance of the fabricated OFETs is yet to be investigated. In this study, we demonstrate that the performance of OFETs with pentacene as OSC and RGO as electrode can be continuously improved by increasing the carbon sp 2 fraction of RGO. When compared to control palladium electrodes, the mobility of the OFETs shows an improvement of ∼200% for 61% sp 2 fraction RGO, which further improves to ∼500% for 80% RGO electrode. Similar improvements were also observed in current on-off ratio, on-current, and transconductance. Our study suggests that, in addition to π-π interaction at RGO/pentacene interface, the tunable electronic properties of RGO electrode have a significant role in OFETs performance

  16. Chemical and engineering approaches to enable organic field-effect transistors for electronic skin applications.

    Sokolov, Anatoliy N; Tee, Benjamin C-K; Bettinger, Christopher J; Tok, Jeffrey B-H; Bao, Zhenan

    2012-03-20

    Skin is the body's largest organ and is responsible for the transduction of a vast amount of information. This conformable material simultaneously collects signals from external stimuli that translate into information such as pressure, pain, and temperature. The development of an electronic material, inspired by the complexity of this organ is a tremendous, unrealized engineering challenge. However, the advent of carbon-based electronics may offer a potential solution to this long-standing problem. In this Account, we describe the use of an organic field-effect transistor (OFET) architecture to transduce mechanical and chemical stimuli into electrical signals. In developing this mimic of human skin, we thought of the sensory elements of the OFET as analogous to the various layers and constituents of skin. In this fashion, each layer of the OFET can be optimized to carry out a specific recognition function. The separation of multimodal sensing among the components of the OFET may be considered a "divide and conquer" approach, where the electronic skin (e-skin) can take advantage of the optimized chemistry and materials properties of each layer. This design of a novel microstructured gate dielectric has led to unprecedented sensitivity for tactile pressure events. Typically, pressure-sensitive components within electronic configurations have suffered from a lack of sensitivity or long mechanical relaxation times often associated with elastomeric materials. Within our method, these components are directly compatible with OFETs and have achieved the highest reported sensitivity to date. Moreover, the tactile sensors operate on a time scale comparable with human skin, making them ideal candidates for integration as synthetic skin devices. The methodology is compatible with large-scale fabrication and employs simple, commercially available elastomers. The design of materials within the semiconductor layer has led to the incorporation of selectivity and sensitivity within

  17. Behavior of pentacene initial nucleation on various dielectrics and its effect on carrier transport in organic field-effect transistor.

    Qi, Qiong; Yu, Aifang; Wang, Liangmin; Jiang, Chao

    2010-11-01

    The influence of dielectric surface energy on the initial nucleation and the growth of pentacene films as well as the electrical properties of the pentacene-based field-effect transistors are investigated. We have examined a range of organic and inorganic dielectrics with different surface energies, such as polycarbonate/SiO2, polystyrene/SiO2, and PMMA/SiO2 bi-layered dielectrics and also the bare SiO2 dielectric. Atomic force microscopy measurements of sub-monolayer and thick pentacene films indicated that the growth of pentacene film was in Stranski-Kranstanow growth mode on all the dielectrics. However, the initial nucleation density and the size of the first-layered pentacene islands deposited on different dielectrics are drastically influenced by the dielectric surface energy. With the increasing of the surface energy, the nucleation density increased and thus the average size of pentacene islands for the first mono-layer deposition decreased. The performance of fabricated pentacene-based thin film transistors was found to be highly related to nucleation density and the island size of deposited Pentacene film, and it had no relationship to the final particle size of the thick pentacene film. The field effect mobility of the thin film transistor could be achieved as high as 1.38 cm2Ns with on/off ratio over 3 x 10(7) on the PS/SiO2 where the lowest surface energy existed among all the dielectrics. For comparison, the values of mobility and on/off ratio were 0.42 cm2Ns and 1 x 10(6) for thin film transistor deposited directly on bare SiO2 having the highest surface energy.

  18. Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

    Wan, Chang Jin; Wan, Qing, E-mail: wanqing@nju.edu.cn, E-mail: yshi@nju.edu.cn [School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Zhu, Li Qiang [Ningbo Institute of Material Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201 (China); Wan, Xiang; Shi, Yi, E-mail: wanqing@nju.edu.cn, E-mail: yshi@nju.edu.cn [School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

    2016-01-25

    The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors.

  19. Organic/inorganic hybrid synaptic transistors gated by proton conducting methylcellulose films

    Wan, Chang Jin; Wan, Qing; Zhu, Li Qiang; Wan, Xiang; Shi, Yi

    2016-01-01

    The idea of building a brain-inspired cognitive system has been around for several decades. Recently, electric-double-layer transistors gated by ion conducting electrolytes were reported as the promising candidates for synaptic electronics and neuromorphic system. In this letter, indium-zinc-oxide transistors gated by proton conducting methylcellulose electrolyte films were experimentally demonstrated with synaptic plasticity including paired-pulse facilitation and spatiotemporal-correlated dynamic logic. More importantly, a model based on proton-related electric-double-layer modulation and stretched-exponential decay function was proposed, and the theoretical results are in good agreement with the experimentally measured synaptic behaviors

  20. High performance silicon–organic hybrid solar cells via improving conductivity of PEDOT:PSS with reduced graphene oxide

    Jiang, Xinyu; Wang, Zilei; Han, Wenhui; Liu, Qiming; Lu, Shuqi; Wen, Yuxiang; Hou, Juan; Huang, Fei; Peng, Shanglong; He, Deyan; Cao, Guozhong

    2017-01-01

    Highlights: • The fabricated Si–organic hybrid solar cells with 2 mg/ml rGO addition yielded a power conversion efficiency of 11.95% with a J_s_c of 31.94 mA cm"−"2, a V_o_c of 579 mV and a FF of 0.648, about 27.8% increase from 9.35% in pristine hybrid solar cells. • The electrical conductivity of PEDOT:PSS improved 35% when appropriate amount rGO was added to PEDOT:PSS, the electron recombination at the junction interface of the device was suppressed by the appropriate amount rGO flakes addition. • The rGO flakes also serve as an antireflection coating to further reduce the reflectance in the wavelength range of 300–550 nm, leading to further enhanced performances of hybrid solar cells. - Abstract: The optical and electrical properties of PEDOT:PSS organic layer play a very important role in determining the power conversion efficiency (PCE) of Si–organic hybrid solar cells (HSCs). In the present study, properties of PEDOT:PSS thin films with reduced graphene oxide (rGO) and their impacts on the performances of the resultant Si–organic HSCs have been systematically investigated. The electrical conductivity of PEDOT:PSS improved 35% when rGO was added to PEDOT:PSS, and the fabricated HSCs with 2 mg/ml rGO addition yielded an PCE of 11.95% with a J_s_c of 31.94 mA cm"−"2, a V_o_c of 579 mV and a FF of 0.648. However, excess rGO would deteriorate the solar cells performances and it might create additional defects and prevent carriers being collected. The Raman spectroscopy, sheet resistance and EQE analyses with rGO suggested that the interaction between the conductive rGO flakes and the aromatic PEDOT most probably not only provide additional charge transport pathways in hole transport layer to improve carrier mobility leading to a higher carrier collection efficiency, but also suppress the electron recombination at the junction interface. In addition, the rGO serve as an antireflection coating to reduce the reflectance of PEDOT:PSS thin film

  1. Polar and nonpolar organic polymer-based monolithic columns for capillary electrochromatography and high-performance liquid chromatography.

    Rathnasekara, Renuka; Khadka, Shantipriya; Jonnada, Murthy; El Rassi, Ziad

    2017-01-01

    This review article is a continuation of the previous reviews on the area of monolithic columns covering the progress made in the field over the last couple of years from the beginning of the second half of 2014 until the end of the first half of 2016. It summarizes and evaluates the evolvement of both polar and nonpolar organic monolithic columns and their use in hydrophilic interaction LC and CEC and reversed-phase chromatography and RP-CEC. The review article discusses the results reported in a total of 62 references. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. High performance silicon–organic hybrid solar cells via improving conductivity of PEDOT:PSS with reduced graphene oxide

    Jiang, Xinyu; Wang, Zilei; Han, Wenhui; Liu, Qiming; Lu, Shuqi; Wen, Yuxiang [School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Hou, Juan [School of Science, Key Laboratory of Ecophysics, Shihezi University, Xinjiang 832003 (China); Huang, Fei [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-2120 (United States); Peng, Shanglong, E-mail: pengshl@lzu.edu.cn [School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); He, Deyan [School of Physical Science and Technology, Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000 (China); Cao, Guozhong, E-mail: gzcao@u.washington.edu [Department of Materials Science and Engineering, University of Washington, Seattle, WA 98195-2120 (United States)

    2017-06-15

    Highlights: • The fabricated Si–organic hybrid solar cells with 2 mg/ml rGO addition yielded a power conversion efficiency of 11.95% with a J{sub sc} of 31.94 mA cm{sup −2}, a V{sub oc} of 579 mV and a FF of 0.648, about 27.8% increase from 9.35% in pristine hybrid solar cells. • The electrical conductivity of PEDOT:PSS improved 35% when appropriate amount rGO was added to PEDOT:PSS, the electron recombination at the junction interface of the device was suppressed by the appropriate amount rGO flakes addition. • The rGO flakes also serve as an antireflection coating to further reduce the reflectance in the wavelength range of 300–550 nm, leading to further enhanced performances of hybrid solar cells. - Abstract: The optical and electrical properties of PEDOT:PSS organic layer play a very important role in determining the power conversion efficiency (PCE) of Si–organic hybrid solar cells (HSCs). In the present study, properties of PEDOT:PSS thin films with reduced graphene oxide (rGO) and their impacts on the performances of the resultant Si–organic HSCs have been systematically investigated. The electrical conductivity of PEDOT:PSS improved 35% when rGO was added to PEDOT:PSS, and the fabricated HSCs with 2 mg/ml rGO addition yielded an PCE of 11.95% with a J{sub sc} of 31.94 mA cm{sup −2}, a V{sub oc} of 579 mV and a FF of 0.648. However, excess rGO would deteriorate the solar cells performances and it might create additional defects and prevent carriers being collected. The Raman spectroscopy, sheet resistance and EQE analyses with rGO suggested that the interaction between the conductive rGO flakes and the aromatic PEDOT most probably not only provide additional charge transport pathways in hole transport layer to improve carrier mobility leading to a higher carrier collection efficiency, but also suppress the electron recombination at the junction interface. In addition, the rGO serve as an antireflection coating to reduce the reflectance of

  3. Nitrogen-modified carbon nanostructures derived from metal-organic frameworks as high performance anodes for Li-ion batteries

    Shen, Cai; Zhao, Chongchong; Xin, Fengxia; Cao, Can; Han, Wei-Qiang

    2015-01-01

    Here, we report preparation of nitrogen-modified nanostructure carbons through carbonization of Cu-based metal organic nanofibers at 700 °C under argon gas atmosphere. After removal of copper through chemical treatment with acids, pure N-modified nanostructure carbon with a nitrogen content of 8.62 wt% is obtained. When use as anodes for lithium-ion battery, the nanostructure carbon electrode has a discharge capacity of 853.1 mAh g −1 measured at a current of 500 mA g −1 after 800 cycles.

  4. High performance inkjet printed phosphorescent organic light emitting diodes based on small molecules commonly used in vacuum processes

    Jung, Sung-Hoon [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Hyong-Jun, E-mail: hkim@kongju.ac.kr [Department of Chemical Engineering, Kongju National University, Cheonan, 330-717 (Korea, Republic of)

    2012-09-30

    High efficiency phosphorescent organic light emitting diodes (OLEDs) are realized by inkjet printing based on small molecules commonly used in vacuum processes in spite of the limitation of the limited solubility. The OLEDs used the inkjet printed 5 wt.% tris(2-phenylpyridine)iridium(III) (Ir(ppy){sub 3}) doped in 4,4 Prime -Bis(carbazol-9-yl)biphenyl (CBP) as the light emitting layer on various small molecule based hole transporting layers, which are widely used in the fabrication of OLEDs by vacuum processes. The OLEDs resulted in the high power and the external quantum efficiencies of 29.9 lm/W and 11.7%, respectively, by inkjet printing the CBP:Ir(ppy){sub 3} on a 40 nm thick 4,4 Prime ,4 Double-Prime -tris(carbazol-9-yl)triphenylamine layer. The performance was very close to a vacuum deposited device with a similar structure. - Highlights: Black-Right-Pointing-Pointer Effective inkjet printed organic light emitting diode (OLED) technique is explored. Black-Right-Pointing-Pointer Solution process on commonly used hole transporting material (HTM) is demonstrated. Black-Right-Pointing-Pointer Triplet energy overlap of HTM and emitting material is the key to the performance. Black-Right-Pointing-Pointer Simple inkjet printed OLED provides the high current efficiency of 40 cd/A.

  5. Design principle for efficient charge separation at the donor-acceptor interface for high performance organic solar cell device

    Nie, Wanyi; Gupta, Gautam; Crone, Brian; Wang, Hsing-Lin; Mohite, Aditya; MPA-11 Material synthesis and integrated device Team; MPA-chemistry Team

    2014-03-01

    The performance of donor (D) /acceptor (A) structure based organic electronic devices, such as solar cell, light emitting devices etc., relays on the charge transfer process at the interface dramatically. In organic solar cell, the photo-induced electron-hole pair is tightly bonded and will form a charge transfer (CT) state at the D/A interface after dissociation. There is a large chance for them to recombine through CT state and thus is a major loss that limit the overall performance. Here, we report three different strategies that allow us to completely suppress the exciplex (or charge transfer state) recombination between any D/A system. We observe that the photocurrent increases by 300% and the power conversion efficiency increases by 4-5 times simply by inserting a spacer layer in the form of an a) insulator b) Oliogomer or using a c) heavy atom at the donor-acceptor interface in a P3HT/C60 bilayer device. By using those different functional mono layers, we successfully suppressed the exciplex recombination in evidence of increased photocurrent and open circuit voltage. Moreover, these strategies are applicable universally to any donor-acceptor interface. And we demonstrated such strategies in a bulk-heterojunction device which improved the power conversion efficiency from 3.5% up to 4.6%.

  6. A new electrochemically responsive 2D π-conjugated covalent organic framework as a high performance supercapacitor

    Das, Sabuj Kanti

    2018-03-02

    Covalent organic frameworks (COFs) build via periodic arrangement of organic building blocks are attracting increasing interest in recent times due to the huge scope in their synthesis through a wide range of structural motifs and diversity in their potential applications. Here we report the synthesis of a new porous extended network π-conjugated TFP-NDA-COF via solvothermal Schiff base condensation of 1,3,5-triformylphloroglucinol (TFP) with 1,5-diaminonaphthalene (NDA). The electrochemical study demonstrates that TFP-NDA-COF has the capability of energy storage up to 379 F g−1 at 2 mV s−1 scan rate, 348 F g−1 at 0.5 A g−1 and offer excellent specific capacitance retention of 75% after 8000 charge discharge cycles. High electrochemical performance could be attributed to the π-electronic conjugation along the polymeric 2D layered network and ion conduction inside the porous channel and permanent porosity of the framework. This indicates that the COF reported herein meets the key requirements like energy storage ability and electrochemical stability needed for developing an efficient energy storage device.

  7. A new electrochemically responsive 2D π-conjugated covalent organic framework as a high performance supercapacitor

    Das, Sabuj Kanti; Bhunia, Kousik; Mallick, Arijit; Pradhan, Anirban; Pradhan, Debabrata; Bhaumik, Asim

    2018-01-01

    Covalent organic frameworks (COFs) build via periodic arrangement of organic building blocks are attracting increasing interest in recent times due to the huge scope in their synthesis through a wide range of structural motifs and diversity in their potential applications. Here we report the synthesis of a new porous extended network π-conjugated TFP-NDA-COF via solvothermal Schiff base condensation of 1,3,5-triformylphloroglucinol (TFP) with 1,5-diaminonaphthalene (NDA). The electrochemical study demonstrates that TFP-NDA-COF has the capability of energy storage up to 379 F g−1 at 2 mV s−1 scan rate, 348 F g−1 at 0.5 A g−1 and offer excellent specific capacitance retention of 75% after 8000 charge discharge cycles. High electrochemical performance could be attributed to the π-electronic conjugation along the polymeric 2D layered network and ion conduction inside the porous channel and permanent porosity of the framework. This indicates that the COF reported herein meets the key requirements like energy storage ability and electrochemical stability needed for developing an efficient energy storage device.

  8. Fused-Ring Acceptors with Asymmetric Side Chains for High-Performance Thick-Film Organic Solar Cells.

    Feng, Shiyu; Zhang, Cai'e; Liu, Yahui; Bi, Zhaozhao; Zhang, Zhe; Xu, Xinjun; Ma, Wei; Bo, Zhishan

    2017-11-01

    A kind of new fused-ring electron acceptor, IDT-OB, bearing asymmetric side chains, is synthesized for high-efficiency thick-film organic solar cells. The introduction of asymmetric side chains can increase the solubility of acceptor molecules, enable the acceptor molecules to pack closely in a dislocated way, and form favorable phase separation when blended with PBDB-T. As expected, PBDB-T:IDT-OB-based devices exhibit high and balanced hole and electron mobility and give a high power conversion efficiency (PCE) of 10.12%. More importantly, the IDT-OB-based devices are not very sensitive to the film thickness, a PCE of 9.17% can still be obtained even the thickness of active layer is up to 210 nm. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Design and Simulation of a 6-Bit Successive-Approximation ADC Using Modeled Organic Thin-Film Transistors

    Huyen Thanh Pham

    2016-01-01

    Full Text Available We have demonstrated a method for using proper models of pentacene P-channel and fullerene N-channel thin-film transistors (TFTs in order to design and simulate organic integrated circuits. Initially, the transistors were fabricated, and we measured their main physical and electrical parameters. Then, these organic TFTs (OTFTs were modeled with support of an organic process design kit (OPDK added in Cadence. The key specifications of the modeled elements were extracted from measured data, whereas the fitting ones were elected to replicate experimental curves. The simulating process proves that frequency responses of the TFTs cover all biosignal frequency ranges; hence, it is reasonable to deploy the elements to design integrated circuits used in biomedical applications. Complying with complementary rules, the organic circuits work properly, including logic gates, flip-flops, comparators, and analog-to-digital converters (ADCs as well. The proposed successive-approximation-register (SAR ADC consumes a power of 883.7 µW and achieves an ENOB of 5.05 bits, a SNR of 32.17 dB at a supply voltage of 10 V, and a sampling frequency of about 2 KHz.

  10. N-Type self-assembled monolayer field-effect transistors for flexible organic electronics

    Ringk, A.; Roelofs, Christian; Smits, E.C.P.; van der Marel, C.; Salzmann, I.; Neuhold, A.; Gelinck, G.H.; Resel, R.; de Leeuw, D.M.; Strohriegl, P.

    Within this work we present n-type self-assembled monolayer field-effect transistors (SAMFETs) based on a novel perylene bisimide. The molecule spontaneously forms a covalently fixed monolayer on top of an aluminium oxide dielectric via a phosphonic acid anchor group. Detailed studies revealed an

  11. Doping kinetics of organic semiconductors investigated by field-effect transistors

    Maddalena, F.; Meijer, E.J.; Asadi, K.; Leeuw, D.M. de; Blom, P.W.M.

    2010-01-01

    The kinetics of acid doping of the semiconductor regioregular poly-3-hexylthiophene with vaporized chlorosilane have been investigated using field-effect transistors. The dopant density has been derived as a function of temperature and exposure time from the shift in the pinch-off voltage, being the

  12. N-Heterocyclic-Carbene-Treated Gold Surfaces in Pentacene Organic Field-Effect Transistors: Improved Stability and Contact at the Interface.

    Lv, Aifeng; Freitag, Matthias; Chepiga, Kathryn M; Schäfer, Andreas H; Glorius, Frank; Chi, Lifeng

    2018-04-16

    N-Heterocyclic carbenes (NHCs), which react with the surface of Au electrodes, have been successfully applied in pentacene transistors. With the application of NHCs, the charge-carrier mobility of pentacene transistors increased by five times, while the contact resistance at the pentacene-Au interface was reduced by 85 %. Even after annealing the NHC-Au electrodes at 200 °C for 2 h before pentacene deposition, the charge-carrier mobility of the pentacene transistors did not decrease. The distinguished performance makes NHCs as excellent alternatives to thiols as metal modifiers for the application in organic field-effect transistors (OFETs). © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Electrochemical behavior of high performance on-chip porous carbon films for micro-supercapacitors applications in organic electrolytes

    Brousse, K.; Huang, P.; Pinaud, S.; Respaud, M.; Daffos, B.; Chaudret, B.; Lethien, C.; Taberna, P. L.; Simon, P.

    2016-10-01

    Carbide derived carbons (CDCs) are promising materials for preparing integrated micro-supercapacitors, as on-chip CDC films are prepared via a process fully compatible with current silicon-based device technology. These films show good adherence on the substrate and high capacitance thanks to their unique nanoporous structure which can be fine-tuned by adjusting the synthesis parameters during chlorination of the metallic carbide precursor. The carbon porosity is mostly related to the synthesis temperature whereas the thickness of the films depends on the chlorination duration. Increasing the pore size allows the adsorption of large solvated ions from organic electrolytes and leads to higher energy densities. Here, we investigated the electrochemical behavior and performance of on-chip TiC-CDC in ionic liquid solvent mixtures of 1-ethyl-3-methylimidazolium tetrafluoroborate (EMIBF4) diluted in either acetonitrile or propylene carbonate via cyclic voltammetry and electrochemical impedance spectroscopy. Thin CDC films exhibited typical capacitive signature and achieved 169 F cm-3 in both electrolytes; 65% of the capacitance was still delivered at 1 V s-1. While increasing the thickness of the films, EMI+ transport limitation was observed in more viscous PC-based electrolyte. Nevertheless, the energy density reached 90 μW h cm-2 in 2M EMIBF4/ACN, confirming the interest of these CDC films for micro-supercapacitors applications.

  14. Synthesis and Electrospraying of Nanoscale MOF (Metal Organic Framework) for High-Performance CO2 Adsorption Membrane

    Wahiduzzaman; Allmond, Kelsey; Stone, John; Harp, Spencer; Mujibur, Khan

    2017-01-01

    We report the sonochemical synthesis of MOF (metal organic framework) nanoparticles of 30-200 nm in size and electrospraying of those particles on electrospun nanofibers to process a MOF-attached nanofibrous membrane. This membrane displayed significant selectivity towards CO2 and capacity of adsorbing with 4000-5000 ppm difference from a mixed gas flow of 1% CO2 and 99% N2. Applying ultrasonic waves during the MOF synthesis offered rapid dispersion and formation of crystalline MOF nanoparticles in room temperature. The MOF nanoparticles of 100-200 nm in size displayed higher surface area and adsorption capacity comparing to that of 30-60 nm in size. Nanofibrous membrane was produced by electrospinning of MOF blended PAN solution followed by electrospraying of additional MOF nanoparticles. This yielded uniform MOF deposition on nanofibers, occurred due to electrostatic attraction between highly charged nanoparticles and conductive nanofibers. A test bench for real-time CO2 adsorption at room temperature was built with non-dispersive Infrared (NDIR) CO2 sensors. Comparative tests were performed on the membrane to investigate its enhanced adsorption capacity. Three layers of the as-produced membranes displayed CO2 adsorption for approximately 2 h. Thermogravimetric analysis (TGA) of the membrane showed the thermal stability of the MOF and PAN up to 290 and 425 °C, respectively.

  15. High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

    Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

    2014-04-15

    Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

  16. Organic hydrogen peroxide-driven low charge potentials for high-performance lithium-oxygen batteries with carbon cathodes

    Wu, Shichao; Qiao, Yu; Yang, Sixie; Ishida, Masayoshi; He, Ping; Zhou, Haoshen

    2017-06-01

    Reducing the high charge potential is a crucial concern in advancing the performance of lithium-oxygen batteries. Here, for water-containing lithium-oxygen batteries with lithium hydroxide products, we find that a hydrogen peroxide aqueous solution added in the electrolyte can effectively promote the decomposition of lithium hydroxide compounds at the ultralow charge potential on a catalyst-free Ketjen Black-based cathode. Furthermore, for non-aqueous lithium-oxygen batteries with lithium peroxide products, we introduce a urea hydrogen peroxide, chelating hydrogen peroxide without any water in the organic, as an electrolyte additive in lithium-oxygen batteries with a lithium metal anode and succeed in the realization of the low charge potential of ~3.26 V, which is among the best levels reported. In addition, the undesired water generally accompanying hydrogen peroxide solutions is circumvented to protect the lithium metal anode and ensure good battery cycling stability. Our results should provide illuminating insights into approaches to enhancing lithium-oxygen batteries.

  17. All-Organic High-Performance Piezoelectric Nanogenerator with Multilayer Assembled Electrospun Nanofiber Mats for Self-Powered Multifunctional Sensors.

    Maity, Kuntal; Mandal, Dipankar

    2018-05-30

    Rapid development of wearable electronics, piezoelectric nanogenerator (PNG), has been paid a special attention because of its sustainable and accessible energy generation. In this context, we present a simple yet highly efficient design strategy to enhance the output performance of an all-organic PNG (OPNG) based on multilayer assembled electrospun poly(vinylidene fluoride) (PVDF) nanofiber (NF) mats where vapor-phase polymerized poly(3,4-ethylenedioxythiophene)-coated PVDF NFs are assembled as electrodes and neat PVDF NFs are utilized as an active component. In addition to the multilayer assembly, electrode compatibility and durability remain a challenging task to mitigate the primary requirements of wearable electronics. A multilayer networked three-dimensional structure integrated with a compatible electrode thereby provides enhanced output voltage and current (e.g., open-circuit voltage, V oc ≈ 48 V, and short-circuit current, I sc ≈ 6 μA, upon 8.3 kPa of the applied stress amplitude) with superior piezoelectric energy conversion efficiency of 66% compared to the single-mat device. Besides, OPNG also shows ultrasensitivity toward human movements such as foot strikes and walking. The weight measurement mapping is critically explored by principal component analysis that may have enormous applications in medical diagnosis to smart packaging industries. More importantly, fatigue test under continuous mechanical impact (over 6 months) shows great promise as a robust wearable mechanical energy harvester.

  18. Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics on Flexible Substrates

    Tetzner, Kornelius; Bose, Indranil R.; Bock, Karlheinz

    2014-01-01

    In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor. PMID:28788243

  19. Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates

    Kornelius Tetzner

    2014-10-01

    Full Text Available In this work, the insulating properties of poly(4-vinylphenol (PVP and SU-8 (MicroChem, Westborough, MA, USA dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor.

  20. Organic Field-Effect Transistors Based on a Liquid-Crystalline Polymeric Semiconductor using SU-8 Gate Dielectrics onFlexible Substrates.

    Tetzner, Kornelius; Bose, Indranil R; Bock, Karlheinz

    2014-10-29

    In this work, the insulating properties of poly(4-vinylphenol) (PVP) and SU-8 (MicroChem, Westborough, MA, USA) dielectrics are analyzed and compared with each other. We further investigate the performance behavior of organic field-effect transistors based on a semiconducting liquid-crystal polymer (LCP) using both dielectric materials and evaluate the results regarding the processability. Due to the lower process temperature needed for the SU-8 deposition, the realization of organic transistors on flexible substrates is demonstrated showing comparable charge carrier mobilities to devices using PVP on glass. In addition, a µ-dispensing procedure of the LCP on SU-8 is presented, improving the switching behavior of the organic transistors, and the promising stability data of the SU-8/LCP stack are verified after storing the structures for 60 days in ambient air showing negligible irreversible degradation of the organic semiconductor.