Silicon Photomultiplier Performance in High ELectric Field

Science.gov (United States)

Montoya, J.; Morad, J.

2016-12-01

Roughly 27% of the universe is thought to be composed of dark matter. The Large Underground Xenon (LUX) relies on the emission of light from xenon atoms after a collision with a dark matter particle. After a particle interaction in the detector, two things can happen: the xenon will emit light and charge. The charge (electrons), in the liquid xenon needs to be pulled into the gas section so that it can interact with gas and emit light. This allows LUX to convert a single electron into many photons. This is done by applying a high voltage across the liquid and gas regions, effectively ripping electrons out of the liquid xenon and into the gas. The current device used to detect photons is the photomultiplier tube (PMT). These devices are large and costly. In recent years, a new technology that is capable of detecting single photons has emerged, the silicon photomultiplier (SiPM). These devices are cheaper and smaller than PMTs. Their performance in a high electric fields, such as those found in LUX, are unknown. It is possible that a large electric field could introduce noise on the SiPM signal, drowning the single photon detection capability. My hypothesis is that SiPMs will not observe a significant increase is noise at an electric field of roughly 10kV/cm (an electric field within the range used in detectors like LUX). I plan to test this hypothesis by first rotating the SiPMs with no applied electric field between two metal plates roughly 2 cm apart, providing a control data set. Then using the same angles test the dark counts with the constant electric field applied. Possibly the most important aspect of LUX, is the photon detector because it's what detects the signals. Dark matter is detected in the experiment by looking at the ratio of photons to electrons emitted for a given interaction in the detector. Interactions with a low electron to photon ratio are more like to be dark matter events than those with a high electron to photon ratio. The ability to

High performance unipolar inverters by utilizing organic field-effect transistors with ultraviolet/ozone treated polystyrene dielectric

International Nuclear Information System (INIS)

Huang, Wei; Yu, Xinge; Fan, Huidong; Yu, Junsheng

2014-01-01

High performance unipolar inverters based on a significant variation of threshold voltage (V th ) of organic field-effect transistors (OFETs), which was realized by introducing UV/ozone (UVO) treatment to polystyrene (PS) dielectric, were fabricated. A controllable V th shift of more than 10 V was obtained in the OFETs by adjusting the UVO treating time, and the unipolar inverters exhibited inverting voltage near 1/2 driving voltage and a noise margin of more than 70% of ideal value. From the analysis of scanning electron microscopy, atom force microscopy, and X-ray photoelectron spectroscopy, the dramatic controllable V th of OFETs, which played a key role in high performance unipolar inverters, was attributed to the newly generated oxygen functional groups in the PS dielectric induced by UVO treatment.

Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors

Science.gov (United States)

Lei, Yanlian; Deng, Ping; Li, Jun; Lin, Ming; Zhu, Furong; Ng, Tsz-Wai; Lee, Chun-Sing; Ong, Beng S.

2016-01-01

Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm2V−1s−1), on/off ratio (107), and other desirable field-effect properties that meet impactful OFET application requirements. PMID:27091315

High Performance Ambipolar Diketopyrrolopyrrole-Thieno[3,2-b]thiophene Copolymer Field-Effect Transistors with Balanced Hole and Electron Mobilities

DEFF Research Database (Denmark)

Chen, Zhuoying; Lee, Mi Jung; Ashraf, Raja Shahid

2012-01-01

Ambipolar OFETs with balanced hole and electron field-effect mobilities both exceeding 1 cm2 V−1 s−1 are achieved based on a single-solution-processed conjugated polymer, DPPT-TT, upon careful optimization of the device architecture, charge injection, and polymer processing. Such high-performance...

Growth anisotropy effect of bulk high temperature superconductors on the levitation performance in the applied magnetic field

International Nuclear Information System (INIS)

Zheng, J.; Liao, X.L.; Jing, H.L.; Deng, Z.G.; Yen, F.; Wang, S.Y.; Wang, J.S.

2013-01-01

Highlights: • The single-layer bulk HTSC with AGSBP obtains better levitation performance than that of MGSBP. • The double-layer bulk with AGSBP obtains better levitation performance than that of MGSBP too. • The double-layer bulk finding is contrast to MGSBP if pursuing high trapped field. • The optimization is highlighted by simple and easy operation, thus economical in the practice. -- Abstract: Growth anisotropies of bulk high temperature superconductors (HTSCs) fabricated by a top-seeded melt texture growth process, that is, different pinning effect in the growth sectors (GSs) and growth sector boundaries (GSBs), possess effect on the macro flux trapping and levitation performance of bulk HTSCs. Previous work (Physics Procedia, 36 (2012) 1043) has found that the bulk HTSC array with aligned GSB pattern (AGSBP) exhibits better capability for levitation and suppression of levitation force decay above a permanent magnet guideway (PMG) compared with misaligned GSB pattern (MGSBP). In this paper, we further examine this growth anisotropy effect on the maglev performance of a double-layer bulk HTSC. In contrast to reported trapped flux cases (Supercond. Sci. Technol. 19 (2006) S466), the two superposed bulk HTSCs with same AGSBP with PMG are found to show better maglev performance. These series of results are helpful and support a new way for the performance optimization of present HTS maglev systems

Growth anisotropy effect of bulk high temperature superconductors on the levitation performance in the applied magnetic field

Energy Technology Data Exchange (ETDEWEB)

Zheng, J., E-mail: jzheng@swjtu.edu.cn; Liao, X.L.; Jing, H.L.; Deng, Z.G.; Yen, F.; Wang, S.Y.; Wang, J.S.

2013-10-15

Highlights: • The single-layer bulk HTSC with AGSBP obtains better levitation performance than that of MGSBP. • The double-layer bulk with AGSBP obtains better levitation performance than that of MGSBP too. • The double-layer bulk finding is contrast to MGSBP if pursuing high trapped field. • The optimization is highlighted by simple and easy operation, thus economical in the practice. -- Abstract: Growth anisotropies of bulk high temperature superconductors (HTSCs) fabricated by a top-seeded melt texture growth process, that is, different pinning effect in the growth sectors (GSs) and growth sector boundaries (GSBs), possess effect on the macro flux trapping and levitation performance of bulk HTSCs. Previous work (Physics Procedia, 36 (2012) 1043) has found that the bulk HTSC array with aligned GSB pattern (AGSBP) exhibits better capability for levitation and suppression of levitation force decay above a permanent magnet guideway (PMG) compared with misaligned GSB pattern (MGSBP). In this paper, we further examine this growth anisotropy effect on the maglev performance of a double-layer bulk HTSC. In contrast to reported trapped flux cases (Supercond. Sci. Technol. 19 (2006) S466), the two superposed bulk HTSCs with same AGSBP with PMG are found to show better maglev performance. These series of results are helpful and support a new way for the performance optimization of present HTS maglev systems.

High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor.

Science.gov (United States)

Song, Xiaoxian; Zhang, Yating; Zhang, Haiting; Yu, Yu; Cao, Mingxuan; Che, Yongli; Wang, Jianlong; Dai, Haitao; Yang, Junbo; Ding, Xin; Yao, Jianquan

2016-10-07

Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a high I on/I off current ratio of about 1 × 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device.

Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

KAUST Repository

Fahad, Hossain M.; Smith, Casey; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2011-01-01

We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits

KAUST Repository

Fahad, Hossain M.

2011-10-12

We introduce the concept of a silicon nanotube field effect transistor whose unique core-shell gate stacks help achieve full volume inversion by giving a surge in minority carrier concentration in the near vicinity of the ultrathin channel and at the same time rapid roll-off at the source and drain junctions constituting velocity saturation-induced higher drive current-enhanced high performance per device with efficient real estate consumption. The core-shell gate stacks also provide superior short channel effects control than classical planar metal oxide semiconductor field effect transistor (MOSFET) and gate-all-around nanowire FET. The proposed device offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow. © 2011 American Chemical Society.

Design strategy for air-stable organic semiconductors applicable to high-performance field-effect transistors

Directory of Open Access Journals (Sweden)

Kazuo Takimiya et al

2007-01-01

Full Text Available Electronic structure of air-stable, high-performance organic field-effect transistor (OFET material, 2,7-dipheneyl[1]benzothieno[3,2-b]benzothiophene (DPh-BTBT, was discussed based on the molecular orbital calculations. It was suggested that the stability is originated from relatively low-lying HOMO level, despite the fact that the molecule contains highly π-extended aromatic core ([1]benzothieno[3,2-b]benzothiophene, BTBT with four fused aromatic rings like naphthacene. This is rationalized by the consideration that the BTBT core is not isoelectronic with naphthacene but with chrysene, a cata-condensed phene with four benzene rings. It is well known that the acene-type compound is unstable among its structural isomers with the same number of benzene rings. Therefore, polycyclic aromatic compounds possessing the phene-substructure will be good candidates for stable organic semiconductors. Considering synthetic easiness, we suggest that the BTBT-substructure is the molecular structure of choice for developing air-stable organic semiconductors.

High-performance semiconductors based on oligocarbazole–thiophene derivatives for solution-fabricated organic field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Chang, Gung-Pei; Hsieh, Kuo-Huang, E-mail: khhsieh@ntu.edu.tw

2013-01-01

A series of oligocarbazole–thiophenes based on a constant conjugate backbone (carbazole–bithiophene–carbazole) with various n-alkyl chain lengths was prepared for application to organic field-effect transistors (OFETs). The lengths of the n-alkyl substitutions attached on 9-position of carbazole moieties were methyl (CCzT2), hexyl (C6CzT2), dodecyl (C12CzT2), and octadecyl (C18CzT2), called CxCzT2. Variations of n-alkyl chain lengths are proposed to figure out the optimization of OFET performance via solution fabrication of the active layer. Before fabricating OFET devices, the thermal, optical, and electrochemical properties of CxCzT2 were fully characterized with thermogravimetric analysis, differential scanning calorimetry, ultraviolet–visible spectroscopy, and cyclic voltammetry to realize the relationships of the structure to the properties. After fabricating CxCzT2 on Si/SiO{sub 2} substrates via solution casting, the thin film morphologies were also studied with polarizing optical microscopy, atomic force microscopy, and X-ray diffraction to investigate the structural relationship to OFET performance. A higher hole mobility was observed with C12CzT2 (3.6 × 10{sup −2} cm{sup 2} V{sup −1} s{sup −1}) due to its liquid crystal properties, and the hole mobility could be further improved to 1.2 × 10{sup −1} cm{sup 2} V{sup −1} s{sup −1} by the introduction of a phenyl-self-assembled monolayer on the Si/SiO{sub 2} substrates. The excellent OFET performances of C12CzT2 by solution–fabrication could be considered as a promising candidate for high-end OFET application. - Highlights: ► These oligomeric semiconductors were synthesized rapidly. ► The thermal, optical, and electrochemical properties were fully investigated. ► The liquid crystal properties can be obtained via alkyl chain length adjustment. ► These oligomeric semiconductors can be solution-fabricated. ► One of these oligomeric semiconductors yields high field-effect hole

High-performance solution-processed polymer ferroelectric field-effect transistors

NARCIS (Netherlands)

Naber, RCG; Tanase, C; Blom, PWM; Gelinck, GH; Marsman, AW; Touwslager, FJ; Setayesh, S; De Leeuw, DM; Naber, Ronald C.G.; Gelinck, Gerwin H.; Marsman, Albert W.; Touwslager, Fred J.

We demonstrate a rewritable, non-volatile memory device with flexible plastic active layers deposited from solution. The memory device is a ferroelectric field-effect transistor (FeFET) made with a ferroelectric fluoropolymer and a bisalkoxy-substituted poly(p-phenylene vinylene) semiconductor

Local Electric Field Facilitates High-Performance Li-Ion Batteries.

Science.gov (United States)

Liu, Youwen; Zhou, Tengfei; Zheng, Yang; He, Zhihai; Xiao, Chong; Pang, Wei Kong; Tong, Wei; Zou, Youming; Pan, Bicai; Guo, Zaiping; Xie, Yi

2017-08-22

By scrutinizing the energy storage process in Li-ion batteries, tuning Li-ion migration behavior by atomic level tailoring will unlock great potential for pursuing higher electrochemical performance. Vacancy, which can effectively modulate the electrical ordering on the nanoscale, even in tiny concentrations, will provide tempting opportunities for manipulating Li-ion migratory behavior. Herein, taking CuGeO 3 as a model, oxygen vacancies obtained by reducing the thickness dimension down to the atomic scale are introduced in this work. As the Li-ion storage progresses, the imbalanced charge distribution emerging around the oxygen vacancies could induce a local built-in electric field, which will accelerate the ions' migration rate by Coulomb forces and thus have benefits for high-rate performance. Furthermore, the thus-obtained CuGeO 3 ultrathin nanosheets (CGOUNs)/graphene van der Waals heterojunctions are used as anodes in Li-ion batteries, which deliver a reversible specific capacity of 1295 mAh g -1 at 100 mA g -1 , with improved rate capability and cycling performance compared to their bulk counterpart. Our findings build a clear connection between the atomic/defect/electronic structure and intrinsic properties for designing high-efficiency electrode materials.

Performance of AlGaN/GaN Heterostructure Field-Effect Transistors for High-Frequency and High-Power Electronics

Directory of Open Access Journals (Sweden)

Peter Kordos

2005-01-01

Full Text Available Preparation and properties of GaN-based heterostructure field-effect transistors (HFETs for high-frequency and high-power applications are studied in this work. Performance of unpassivated and SiO2 passivated AlGaN/GaN HFETs, as well as passivated SiO2/AlGaN/GaN MOSHFETs (metal-oxide-semicondutor HFETs is compared. It is found that MOSHFETs exhibit better DC and RF properties than simple HFET counterparts. Deposited SiO2 yielded an increase of the sheet carrier density from 7.6x10^12 cm^-2 to 9.2x10^12 cm^-2 and subsequent increase of the static drain saturation current from 0.75 A/mm to 1.09 A/mm. Small-signal RF characterisation of MOSHFETs showed an extrinsic current gain cut-off frequency fT of 24 GHz and a maximum frequency of oscillation fmax of 40 GHz. These are fully comparable values with state-of-the-art AlGaN/GaN HFETs. Finnaůůy, microwave power measurements confirmed excellent performance of MOSHFETs:the output power measured at 7 GHz is about two-times larger than that of simple unpassived HFET. Thus, a great potential in application of GaN-based MOSHFETs is documented. 

Charge injection engineering of ambipolar field-effect transistors for high-performance organic complementary circuits.

Science.gov (United States)

Baeg, Kang-Jun; Kim, Juhwan; Khim, Dongyoon; Caironi, Mario; Kim, Dong-Yu; You, In-Kyu; Quinn, Jordan R; Facchetti, Antonio; Noh, Yong-Young

2011-08-01

Ambipolar π-conjugated polymers may provide inexpensive large-area manufacturing of complementary integrated circuits (CICs) without requiring micro-patterning of the individual p- and n-channel semiconductors. However, current-generation ambipolar semiconductor-based CICs suffer from higher static power consumption, low operation frequencies, and degraded noise margins compared to complementary logics based on unipolar p- and n-channel organic field-effect transistors (OFETs). Here, we demonstrate a simple methodology to control charge injection and transport in ambipolar OFETs via engineering of the electrical contacts. Solution-processed caesium (Cs) salts, as electron-injection and hole-blocking layers at the interface between semiconductors and charge injection electrodes, significantly decrease the gold (Au) work function (∼4.1 eV) compared to that of a pristine Au electrode (∼4.7 eV). By controlling the electrode surface chemistry, excellent p-channel (hole mobility ∼0.1-0.6 cm(2)/(Vs)) and n-channel (electron mobility ∼0.1-0.3 cm(2)/(Vs)) OFET characteristics with the same semiconductor are demonstrated. Most importantly, in these OFETs the counterpart charge carrier currents are highly suppressed for depletion mode operation (I(off) 0.1-0.2 mA). Thus, high-performance, truly complementary inverters (high gain >50 and high noise margin >75% of ideal value) and ring oscillators (oscillation frequency ∼12 kHz) based on a solution-processed ambipolar polymer are demonstrated.

High performance top-gated ferroelectric field effect transistors based on two-dimensional ZnO nanosheets

Science.gov (United States)

Tian, Hongzheng; Wang, Xudong; Zhu, Yuankun; Liao, Lei; Wang, Xianying; Wang, Jianlu; Hu, Weida

2017-01-01

High quality ultrathin two-dimensional zinc oxide (ZnO) nanosheets (NSs) are synthesized, and the ZnO NS ferroelectric field effect transistors (FeFETs) are demonstrated based on the P(VDF-TrFE) polymer film used as the top gate insulating layer. The ZnO NSs exhibit a maximum field effect mobility of 588.9 cm2/Vs and a large transconductance of 2.5 μS due to their high crystalline quality and ultrathin two-dimensional structure. The polarization property of the P(VDF-TrFE) film is studied, and a remnant polarization of >100 μC/cm2 is achieved with a P(VDF-TrFE) thickness of 300 nm. Because of the ultrahigh remnant polarization field generated in the P(VDF-TrFE) film, the FeFETs show a large memory window of 16.9 V and a high source-drain on/off current ratio of more than 107 at zero gate voltage and a source-drain bias of 0.1 V. Furthermore, a retention time of >3000 s of the polarization state is obtained, inspiring a promising candidate for applications in data storage with non-volatile features.

High-performance PbS quantum dot vertical field-effect phototransistor using graphene as a transparent electrode

Science.gov (United States)

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

2016-12-01

Solution processed photoactive PbS quantum dots (QDs) were used as channel in high-performance near-infrared vertical field-effect phototransistor (VFEpT) where monolayer graphene embedded as transparent electrode. In this vertical architecture, the PbS QD channel was sandwiched and naturally protected between the drain and source electrodes, which made the device ultrashort channel length (110 nm) simply the thickness of the channel layer. The VFEpT exhibited ambipolar operation with high mobilities of μe = 3.5 cm2/V s in n-channel operation and μh = 3.3 cm2/V s in p-channel operation at low operation voltages. By using the photoactive PbS QDs as channel material, the VFEpT exhibited good photoresponse properties with a responsivity of 4.2 × 102 A/W, an external quantum efficiency of 6.4 × 104% and a photodetectivity of 2.1 × 109 Jones at the light irradiance of 36 mW/cm2. Additionally, the VFEpT showed excellent on/off switching with good stability and reproducibility and fast response speed with a short rise time of 12 ms in n-channel operation and 10.6 ms in p-channel operation. These high mobilities, good photoresponse properties and simplistic fabrication of our VFEpTs provided a facile route to the high-performance inorganic photodetectors.

Non-Planar Nanotube and Wavy Architecture Based Ultra-High Performance Field Effect Transistors

KAUST Repository

Hanna, Amir

2016-11-01

This dissertation presents a unique concept for a device architecture named the nanotube (NT) architecture, which is capable of higher drive current compared to the Gate-All-Around Nanowire architecture when applied to heterostructure Tunnel Field Effect Transistors. Through the use of inner/outer core-shell gates, heterostructure NT TFET leverages physically larger tunneling area thus achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. We discuss the physics of p-type (Silicon/Indium Arsenide) and n-type (Silicon/Germanium hetero-structure) based TFETs. Numerical TCAD simulations have shown that NT TFETs have 5x and 1.6 x higher normalized ION when compared to GAA NW TFET for p and n-type TFETs, respectively. This is due to the availability of larger tunneling junction cross sectional area, and lower Shockley-Reed-Hall recombination, while achieving sub 60 mV/dec performance for more than 5 orders of magnitude of drain current, thus enabling scaling down of Vdd to 0.5 V. This dissertation also introduces a novel thin-film-transistors architecture that is named the Wavy Channel (WC) architecture, which allows for extending device width by integrating vertical fin-like substrate corrugations giving rise to up to 50% larger device width, without occupying extra chip area. The novel architecture shows 2x higher output drive current per unit chip area when compared to conventional planar architecture. The current increase is attributed to both the extra device width and 50% enhancement in field effect mobility due to electrostatic gating effects. Digital circuits are fabricated to demonstrate the potential of integrating WC TFT based circuits. WC inverters have shown 2× the peak-to-peak output voltage for the same input, and ~2× the operation frequency of the planar inverters for the same peak-to-peak output voltage. WC NAND circuits have shown 2× higher peak-to-peak output voltage, and 3× lower high-to-low propagation

Effects of cusped field thruster on the performance of drag-free control system

Science.gov (United States)

Cui, K.; Liu, H.; Jiang, W. J.; Sun, Q. Q.; Hu, P.; Yu, D. R.

2018-03-01

With increased measurement tasks of space science, more requirements for the spacecraft environment have been put forward. Those tasks (e.g. the measurement of Earth's steady state gravity field anomalies) lead to the desire for developing drag-free control. Higher requirements for the thruster performance are made due to the demand for the drag-free control system and real-time compensation for non-conservative forces. Those requirements for the propulsion system include wide continuous throttling ability, high resolution, rapid response, low noise and so on. As a promising candidate, the cusped field thruster has features such as the high working stability, the low erosion rate, a long lifetime and the simple structure, so that it is chosen as the thruster to be discussed in this paper. Firstly, the performance of a new cusped field thruster is tested and analyzed. Then a drag-free control scheme based on the cusped field thruster is designed to evaluate the performance of this thruster. Subsequently, the effects of the thrust resolution, transient response time and thrust uncertainty on the controller are calculated respectively. Finally, the performance of closed-loop system is analyzed, and the simulation results verify the feasibility of applying cusped field thruster to drag-free flight in the space science measurement tasks.

High performance tunnel field-effect transistor by gate and source engineering.

Science.gov (United States)

Huang, Ru; Huang, Qianqian; Chen, Shaowen; Wu, Chunlei; Wang, Jiaxin; An, Xia; Wang, Yangyuan

2014-12-19

As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I(ON)/I(OFF) ratio (∼ 10(7)) at V(DS) = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high ION/IOFF ratio of ∼ 10(8) and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec(-1) was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching.

Effects of Different Conditioning Activities on 100-m Dash Performance in High School Track and Field Athletes.

Science.gov (United States)

Ferreira-Júnior, João B; Guttierres, Ana P M; Encarnação, Irismar G A; Lima, Jorge R P; Borba, Diego A; Freitas, Eduardo D S; Bemben, Michael G; Vieira, Carlos A; Bottaro, Martim

2018-01-01

This study compared the effects of different conditioning activities on the 100-m dash performance of 11 male, high school track and field athletes (mean age = 16.3; SD = 1.2 years). Participants performed a 100-m dash seven minutes after each of four randomized conditioning protocols, with each condition and 100-m dash separated by 3-10 days. The conditioning protocols were (a) control, no conditioning activity; (b) weighted plyometric, three sets of 10 repetitions of alternate leg bounding with additional load of 10% of the body mass; (c) free sprint, two 20-m sprints; and (d) resisted sprint (RS), two 20-m resisted sprints using an elastic tubing tool. We obtained session ratings of perceived exertion (SRPE) immediately after each conditioning protocol. There were no significant differences between any of the three experimental conditioning activities on 100-m sprint time, but the RS protocol improved 100-m sprint time compared with the control (no conditioning) protocol ( p < .001). The RS also led to greater sprint velocity and higher SRPE compared with the control condition ( p < .01). There was no significant association between SRPE and 100-m performance ( p = .77, r = .05). These results suggest a benefit for young male track and field athletes to the elastic tubing warm-up activities prior to the 100-m dash.

Printing Semiconductor-Insulator Polymer Bilayers for High-Performance Coplanar Field-Effect Transistors.

Science.gov (United States)

Bu, Laju; Hu, Mengxing; Lu, Wanlong; Wang, Ziyu; Lu, Guanghao

2018-01-01

Source-semiconductor-drain coplanar transistors with an organic semiconductor layer located within the same plane of source/drain electrodes are attractive for next-generation electronics, because they could be used to reduce material consumption, minimize parasitic leakage current, avoid cross-talk among different devices, and simplify the fabrication process of circuits. Here, a one-step, drop-casting-like printing method to realize a coplanar transistor using a model semiconductor/insulator [poly(3-hexylthiophene) (P3HT)/polystyrene (PS)] blend is developed. By manipulating the solution dewetting dynamics on the metal electrode and SiO 2 dielectric, the solution within the channel region is selectively confined, and thus make the top surface of source/drain electrodes completely free of polymers. Subsequently, during solvent evaporation, vertical phase separation between P3HT and PS leads to a semiconductor-insulator bilayer structure, contributing to an improved transistor performance. Moreover, this coplanar transistor with semiconductor-insulator bilayer structure is an ideal system for injecting charges into the insulator via gate-stress, and the thus-formed PS electret layer acts as a "nonuniform floating gate" to tune the threshold voltage and effective mobility of the transistors. Effective field-effect mobility higher than 1 cm 2 V -1 s -1 with an on/off ratio > 10 7 is realized, and the performances are comparable to those of commercial amorphous silicon transistors. This coplanar transistor simplifies the fabrication process of corresponding circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance tunnel field-effect transistor by gate and source engineering

International Nuclear Information System (INIS)

Huang, Ru; Huang, Qianqian; Chen, Shaowen; Wu, Chunlei; Wang, Jiaxin; An, Xia; Wang, Yangyuan

2014-01-01

As one of the most promising candidates for future nanoelectronic devices, tunnel field-effect transistors (TFET) can overcome the subthreshold slope (SS) limitation of MOSFET, whereas high ON-current, low OFF-current and steep switching can hardly be obtained at the same time for experimental TFETs. In this paper, we developed a new nanodevice technology based on TFET concepts. By designing the gate configuration and introducing the optimized Schottky junction, a multi-finger-gate TFET with a dopant-segregated Schottky source (mFSB-TFET) is proposed and experimentally demonstrated. A steeper SS can be achieved in the fabricated mFSB-TFET on the bulk Si substrate benefiting from the coupled quantum band-to-band tunneling (BTBT) mechanism, as well as a high I ON /I OFF ratio (∼10 7 ) at V DS  = 0.2 V without an area penalty. By compatible SOI CMOS technology, the fabricated Si mFSB-TFET device was further optimized with a high I ON /I OFF ratio of ∼10 8 and a steeper SS of over 5.5 decades of current. A minimum SS of below 60 mV dec −1 was experimentally obtained, indicating its dominant quantum BTBT mechanism for switching. (paper)

In-system Performance of MQW Lasers Exposed to High Magnetic Field

CERN Document Server

Jensen, Fredrik Bjorn Henning; Azevedo, C S; Cervelli, Giovanni; Gill, Karl; Grabit, Robert; Vasey, François

2000-01-01

The effect of magnetic field has been investigated on 1310nm edge-emitting multi-quantum-well lasers. These lasers are candidate transmitters for the CMS tracker optical link, which will be operated in a 4T solenoidal magnetic field. In-situ measurements up to 2.4T of in-system laser analogue performance and laser spectral characteristics were carried out. No degradation of performance and spectral characteristics was observed

Fusion Performance of High Magnetic Field Expe-riments

Science.gov (United States)

Airoldi, A.; Cenacchi, G.; Coppi, B.

1997-11-01

High magnetic field machines have the characteristic of operating well within the usual limitations known as density and beta limits. This feature is highlighted in the Ignitor concept thanks to its reference field of up to 13 T on the magnetic axis and its high current densities. The two reference scenarios with plasma currents of 12 MA and 11 MA respectively, are discussed. The ramp time is 4 sec for both scenarios, whereas the following programmed time dependence of the current is different. The results of an extensive series of numerical simulations using an appropriate version of the 1+1/2D JETTO transport code show that in any case optimal fusion performances are reacheable without needing enhancement over the values of the energy replacement time predicted by the most pessimistic scalings (for the so-called L-mode regime). The density is the crucial parameter involved on the path to ignition that can be achieved provided the density rise is carefully programmed. The density profiles can be controlled by the proper use of the pellet injector that is included in the machine design.

Analysis of Operating Performance and Three Dimensional Magnetic Field of High Voltage Induction Motors with Stator Chute

Directory of Open Access Journals (Sweden)

WANG Qing-shan

2017-06-01

Full Text Available In view of the difficulties on technology of rotor chute in high voltage induction motor，the desig method adopted stator chute structure is put forward． The mathematical model of three dimensional nonlinear transient field for solving stator chute in high voltage induction motor is set up． Through the three dimensional entity model of motor，three dimensional finite element method based on T，ψ － ψ electromagnetic potential is adopted for the analysis and calculation of stator chute in high voltage induction motor under rated condition． The distributions long axial of fundamental wave magnetic field and tooth harmonic wave magnetic field are analyzed after stator chute，and the weakening effects on main tooth harmonic magnetic field are researched． Further more，the comparison analysis of main performance parameters of chute and straight slot is carried out under rated condition． The results show that the electrical performance of stator chute is better than that of straight slot in high voltage induction motor，and the tooth harmonic has been sharply decreased

Strategies for Improving the Performance of Sensors Based on Organic Field-Effect Transistors.

Science.gov (United States)

Wu, Xiaohan; Mao, Shun; Chen, Junhong; Huang, Jia

2018-04-01

Organic semiconductors (OSCs) have been extensively studied as sensing channel materials in field-effect transistors due to their unique charge transport properties. Stimulation caused by its environmental conditions can readily change the charge-carrier density and mobility of OSCs. Organic field-effect transistors (OFETs) can act as both signal transducers and signal amplifiers, which greatly simplifies the device structure. Over the past decades, various sensors based on OFETs have been developed, including physical sensors, chemical sensors, biosensors, and integrated sensor arrays with advanced functionalities. However, the performance of OFET-based sensors still needs to be improved to meet the requirements from various practical applications, such as high sensitivity, high selectivity, and rapid response speed. Tailoring molecular structures and micro/nanofilm structures of OSCs is a vital strategy for achieving better sensing performance. Modification of the dielectric layer and the semiconductor/dielectric interface is another approach for improving the sensor performance. Moreover, advanced sensory functionalities have been achieved by developing integrated device arrays. Here, a brief review of strategies used for improving the performance of OFET sensors is presented, which is expected to inspire and provide guidance for the design of future OFET sensors for various specific and practical applications. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of Electric and Magnetic Fields on the Performance of a Superconducting Cavity

International Nuclear Information System (INIS)

Gianluigi Ciovati; Peter Kneisel; Jacek Sekutowicz; Waldemar Singer

2005-01-01

A special two-cell cavity was designed to obtain surface field distributions suitable for investigation of electric and magnetic field effects on cavity performance. The cavity design and preliminary results were presented in a previous contribution. The bulk niobium cavity was heat-treated in a vacuum furnace at 1250 C to improve thermal conductivity. Three seamless hydroformed Nb/Cu cavities of the same design were fabricated to investigate the role of the electron beam welds located in high field areas. This paper will present RF test results at 2 K for the bulk niobium and one of the seamless cavities

Theoretical investigation of performance of armchair graphene nanoribbon field effect transistors

Science.gov (United States)

Hur, Ji-Hyun; Kim, Deok-Kee

2018-05-01

In this paper, we theoretically investigate the highest possible expected performance for graphene nanoribbon field effect transistors (GNRFETs) for a wide range of operation voltages and device structure parameters, such as the width of the graphene nanoribbon and gate length. We formulated a self-consistent, non-equilibrium Green’s function method in conjunction with the Poisson equation and modeled the operation of nanometer sized GNRFETs, of which GNR channels have finite bandgaps so that the GNRFET can operate as a switch. We propose a metric for competing with the current silicon CMOS high performance or low power devices and explain that this can vary greatly depending on the GNRFET structure parameters.

GEM detector performance with innovative micro-TPC readout in high magnetic field

Directory of Open Access Journals (Sweden)

Garzia I.

2018-01-01

Full Text Available Gas detector development is one of the pillars of the research in fundamental physics. Since several years, a new concept of detectors, called Micro Pattern Gas Detector (MPGD, allowed to overcome several problems related to other types of commonly used detectors, like drift chamber and micro strips detectors, reducing the rate of discharges and providing better radiation tolerance. Among the most used MPGDs are the Gas Electron Multipliers (GEMs. Invented by Sauli in 1997, nowadays GEMs have become an important reality for particle detectors in high energy physics. Commonly deployed as fast timing detectors and triggers, their fast response, high rate capability and high radiation hardness make them also suitable as tracking detectors. The readout scheme is one of the most important features in tracking technology. Analog readout based on the calculation of the center of gravity technique allows to overcome the limit imposed by digital pads, whose spatial resolution is limited by the pitch dimensions. However, the presence of high external magnetic fields can distort the electronic cloud and affect the performance. The development of the micro-TPC reconstruction method brings GEM detectors into a new prospective, improving significantly the spatial resolutionin presence of high magnetic fields. This innovative technique allows to reconstruct the 3-dimensional particle position, as Time Projection Chamber, but within a drift gap of a few millimeters. In these report, the charge centroid and micro-TPC methods are described in details. We discuss the results of several test beams performed with planar chambers in magnetic field. These results are one of the first developments of micro-TPC technique for GEM detectors, which allows to reach unprecedented performance in a high magnetic field of 1 T.

GEM detector performance with innovative micro-TPC readout in high magnetic field

Science.gov (United States)

Garzia, I.; Alexeev, M.; Amoroso, A.; Baldini Ferroli, R.; Bertani, M.; Bettoni, D.; Bianchi, F.; Calcaterra, A.; Canale, N.; Capodiferro, M.; Cassariti, V.; Cerioni, S.; Chai, J. Y.; Chiozzi, S.; Cibinetto, G.; Cossio, F.; Cotta Ramusino, A.; De Mori, F.; Destefanis, M.; Dong, J.; Evangelisti, F.; Evangelisti, F.; Farinelli, R.; Fava, L.; Felici, G.; Fioravanti, E.; Gatta, M.; Greco, M.; Lavezzi, L.; Leng, C. Y.; Li, H.; Maggiora, M.; Malaguti, R.; Marcello, S.; Melchiorri, M.; Mezzadri, G.; Mignone, M.; Morello, G.; Pacetti, S.; Patteri, P.; Pellegrino, J.; Pelosi, A.; Rivetti, A.; Rolo, M. D.; Savrié, M.; Scodeggio, M.; Soldani, E.; Sosio, S.; Spataro, S.; Tskhadadze, E.; Verma, S.; Wheadon, R.; Yan, L.

2018-01-01

Gas detector development is one of the pillars of the research in fundamental physics. Since several years, a new concept of detectors, called Micro Pattern Gas Detector (MPGD), allowed to overcome several problems related to other types of commonly used detectors, like drift chamber and micro strips detectors, reducing the rate of discharges and providing better radiation tolerance. Among the most used MPGDs are the Gas Electron Multipliers (GEMs). Invented by Sauli in 1997, nowadays GEMs have become an important reality for particle detectors in high energy physics. Commonly deployed as fast timing detectors and triggers, their fast response, high rate capability and high radiation hardness make them also suitable as tracking detectors. The readout scheme is one of the most important features in tracking technology. Analog readout based on the calculation of the center of gravity technique allows to overcome the limit imposed by digital pads, whose spatial resolution is limited by the pitch dimensions. However, the presence of high external magnetic fields can distort the electronic cloud and affect the performance. The development of the micro-TPC reconstruction method brings GEM detectors into a new prospective, improving significantly the spatial resolutionin presence of high magnetic fields. This innovative technique allows to reconstruct the 3-dimensional particle position, as Time Projection Chamber, but within a drift gap of a few millimeters. In these report, the charge centroid and micro-TPC methods are described in details. We discuss the results of several test beams performed with planar chambers in magnetic field. These results are one of the first developments of micro-TPC technique for GEM detectors, which allows to reach unprecedented performance in a high magnetic field of 1 T.

Far-field high resolution effects and manipulating of electromagnetic waves based on transformation optics

Science.gov (United States)

Ji, XueBin; Zang, XiaoFei; Li, Zhou; Shi, Cheng; Chen, Lin; Cai, Bin; Zhu, YiMing

2015-05-01

Based on the transformation optics (TO) and the effective medium theory (EMT), a new illusion media with homogeneous and isotropic materials is proposed to realize the far-field high resolution effects. When two point sources with the separation distance of λ0 / 4 are covered with the illusion media (λ0 is the free-space wavelength), the corresponding far-field pattern is equivalent to the case of two point sources with the separation distance larger than λ0 / 2 in free space, leading to the far-field high resolution effects (in free space, the separation distance of λ0 / 4 is less than half-wavelength, and thus the two point sources cannot be distinguished from each other). Furthermore, such illusion media can be applied to design tunable high-directivity antenna and an angle-dependent floating carpet cloak. Full wave simulations are carried out to verify the performance of our device.

Analysis of a high brightness photo electron beam with self field and wake field effects

International Nuclear Information System (INIS)

Parsa, Z.

1991-01-01

High brightness sources are the basic ingredients in the new accelerator developments such as Free-Electron Laser experiments. The effects of the interactions between the highly charged particles and the fields in the accelerating structure, e.g. R.F., Space charge and Wake fields can be detrimental to the beam and the experiments. We present and discuss the formulation used, some simulation and results for the Brookhaven National Laboratory high brightness beam that illustrates effects of the accelerating field, space charge forces (e.g. due to self field of the bunch), and the wake field (e.g. arising from the interaction of the cavity surface and the self field of the bunch)

Design and performance of an ultra-high vacuum scanning tunneling microscope operating at dilution refrigerator temperatures and high magnetic fields.

Science.gov (United States)

Misra, S; Zhou, B B; Drozdov, I K; Seo, J; Urban, L; Gyenis, A; Kingsley, S C J; Jones, H; Yazdani, A

2013-10-01

We describe the construction and performance of a scanning tunneling microscope capable of taking maps of the tunneling density of states with sub-atomic spatial resolution at dilution refrigerator temperatures and high (14 T) magnetic fields. The fully ultra-high vacuum system features visual access to a two-sample microscope stage at the end of a bottom-loading dilution refrigerator, which facilitates the transfer of in situ prepared tips and samples. The two-sample stage enables location of the best area of the sample under study and extends the experiment lifetime. The successful thermal anchoring of the microscope, described in detail, is confirmed through a base temperature reading of 20 mK, along with a measured electron temperature of 250 mK. Atomically resolved images, along with complementary vibration measurements, are presented to confirm the effectiveness of the vibration isolation scheme in this instrument. Finally, we demonstrate that the microscope is capable of the same level of performance as typical machines with more modest refrigeration by measuring spectroscopic maps at base temperature both at zero field and in an applied magnetic field.

High performance ultrasonic field simulation on complex geometries

Science.gov (United States)

Chouh, H.; Rougeron, G.; Chatillon, S.; Iehl, J. C.; Farrugia, J. P.; Ostromoukhov, V.

2016-02-01

Ultrasonic field simulation is a key ingredient for the design of new testing methods as well as a crucial step for NDT inspection simulation. As presented in a previous paper [1], CEA-LIST has worked on the acceleration of these simulations focusing on simple geometries (planar interfaces, isotropic materials). In this context, significant accelerations were achieved on multicore processors and GPUs (Graphics Processing Units), bringing the execution time of realistic computations in the 0.1 s range. In this paper, we present recent works that aim at similar performances on a wider range of configurations. We adapted the physical model used by the CIVA platform to design and implement a new algorithm providing a fast ultrasonic field simulation that yields nearly interactive results for complex cases. The improvements over the CIVA pencil-tracing method include adaptive strategies for pencil subdivisions to achieve a good refinement of the sensor geometry while keeping a reasonable number of ray-tracing operations. Also, interpolation of the times of flight was used to avoid time consuming computations in the impulse response reconstruction stage. To achieve the best performance, our algorithm runs on multi-core superscalar CPUs and uses high performance specialized libraries such as Intel Embree for ray-tracing, Intel MKL for signal processing and Intel TBB for parallelization. We validated the simulation results by comparing them to the ones produced by CIVA on identical test configurations including mono-element and multiple-element transducers, homogeneous, meshed 3D CAD specimens, isotropic and anisotropic materials and wave paths that can involve several interactions with interfaces. We show performance results on complete simulations that achieve computation times in the 1s range.

High Correlated Paternity Leads to Negative Effects on Progeny Performance in Two Mediterranean Shrub Species.

Directory of Open Access Journals (Sweden)

Sofia Nora

Full Text Available Anthropogenic habitat deterioration can promote changes in plant mating systems that subsequently may affect progeny performance, thereby conditioning plant recruitment for the next generation. However, very few studies yet tested mating system parameters other than outcrossing rates; and the direct effects of the genetic diversity of the pollen received by maternal plants (i.e. correlated paternity has often been overlooked. In this study, we investigated the relation between correlated paternity and progeny performance in two common Mediterranean shrubs, Myrtus communis and Pistacia lentiscus. To do so, we collected open-pollinated progeny from selected maternal plants, calculated mating system parameters using microsatellite genotyping and conducted sowing experiments under greenhouse and field conditions. Our results showed that some progeny fitness components were negatively affected by the high correlated paternity of maternal plants. In Myrtus communis, high correlated paternity had a negative effect on the proportion and timing of seedling emergence in the natural field conditions and in the greenhouse sowing experiment, respectively. In Pistacia lentiscus, seedling emergence time under field conditions was also negatively influenced by high correlated paternity and a progeny survival analysis in the field experiment showed greater mortality of seedlings from maternal plants with high correlated paternity. Overall, we found effects of correlated paternity on the progeny performance of Myrtus communis, a self-compatible species. Further, we also detected effects of correlated paternity on the progeny emergence time and survival in Pistacia lentiscus, an obligate outcrossed species. This study represents one of the few existing empirical examples which highlight the influence that correlated paternity may exert on progeny performance in multiple stages during early seedling growth.

High Performance Clocks and Gravity Field Determination

Science.gov (United States)

Müller, J.; Dirkx, D.; Kopeikin, S. M.; Lion, G.; Panet, I.; Petit, G.; Visser, P. N. A. M.

2018-02-01

Time measured by an ideal clock crucially depends on the gravitational potential and velocity of the clock according to general relativity. Technological advances in manufacturing high-precision atomic clocks have rapidly improved their accuracy and stability over the last decade that approached the level of 10^{-18}. This notable achievement along with the direct sensitivity of clocks to the strength of the gravitational field make them practically important for various geodetic applications that are addressed in the present paper. Based on a fully relativistic description of the background gravitational physics, we discuss the impact of those highly-precise clocks on the realization of reference frames and time scales used in geodesy. We discuss the current definitions of basic geodetic concepts and come to the conclusion that the advances in clocks and other metrological technologies will soon require the re-definition of time scales or, at least, clarification to ensure their continuity and consistent use in practice. The relative frequency shift between two clocks is directly related to the difference in the values of the gravity potential at the points of clock's localization. According to general relativity the relative accuracy of clocks in 10^{-18} is equivalent to measuring the gravitational red shift effect between two clocks with the height difference amounting to 1 cm. This makes the clocks an indispensable tool in high-precision geodesy in addition to laser ranging and space geodetic techniques. We show how clock measurements can provide geopotential numbers for the realization of gravity-field-related height systems and can resolve discrepancies in classically-determined height systems as well as between national height systems. Another application of clocks is the direct use of observed potential differences for the improved recovery of regional gravity field solutions. Finally, clock measurements for space-borne gravimetry are analyzed along with

Performance evaluation of parallel electric field tunnel field-effect transistor by a distributed-element circuit model

Science.gov (United States)

Morita, Yukinori; Mori, Takahiro; Migita, Shinji; Mizubayashi, Wataru; Tanabe, Akihito; Fukuda, Koichi; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shin-ichi; Liu, Yongxun; Masahara, Meishoku; Ota, Hiroyuki

2014-12-01

The performance of parallel electric field tunnel field-effect transistors (TFETs), in which band-to-band tunneling (BTBT) was initiated in-line to the gate electric field was evaluated. The TFET was fabricated by inserting an epitaxially-grown parallel-plate tunnel capacitor between heavily doped source wells and gate insulators. Analysis using a distributed-element circuit model indicated there should be a limit of the drain current caused by the self-voltage-drop effect in the ultrathin channel layer.

Levitation performance of high-T{sub c} superconductor in sinusoidal guideway magnetic field

Energy Technology Data Exchange (ETDEWEB)

Liu, W. [Applied Superconductivity Laboratory, Southwest Jiaotong University, Chengdu 610031 (China)], E-mail: asclab@asclab.cn; Wang, J.S.; Jing, H.; Jiang, M.; Zheng, J.; Wang, S.Y. [Applied Superconductivity Laboratory, Southwest Jiaotong University, Chengdu 610031 (China)

2008-12-01

The vertical component of the Halbach array's magnetic field exhibits a sinusoid distribution because of the closed magnetic flux area between two neighbouring poles, so this field can be regarded as the sinusoidal magnetic field. This article mainly discusses the influence of the closed flux region on the levitation performance of the bulk high-temperature superconductor (HTS). Moreover, the levitation performance is compared between the closed and diverging region of magnetic flux. The experimental results can be analyzed by the magnetic circuit theory and the frozen-image model. The analysis indicates that the closed region of magnetic flux can influence the levitation performance of bulk HTS obviously and provide an extra useful guidance force. These conclusions are helpful to optimize the HTS Maglev system.

Magnetic resonance imaging. Recent studies on biological effects of static magnetic and high-frequency electromagnetic fields

International Nuclear Information System (INIS)

Pophof, B.; Brix, G.

2017-01-01

During the last few years, new studies on biological effects of strong static magnetic fields and on thermal effects of high-frequency electromagnetic fields used in magnetic resonance imaging (MRI) were published. Many of these studies have not yet been included in the current safety recommendations. Scientific publications since 2010 on biological effects of static and electromagnetic fields in MRI were researched and evaluated. New studies confirm older publications that have already described effects of static magnetic fields on sensory organs and the central nervous system, accompanied by sensory perceptions. A new result is the direct effect of Lorentz forces on ionic currents in the semicircular canals of the vestibular system. Recent studies of thermal effects of high-frequency electromagnetic fields were focused on the development of anatomically realistic body models and a more precise simulation of exposure scenarios. Strong static magnetic fields can cause unpleasant sensations, in particular, vertigo. In addition, they can influence the performance of the medical staff and thus potentially endanger the patient's safety. As a precaution, medical personnel should move slowly within the field gradient. High-frequency electromagnetic fields lead to an increase in the temperature of patients' tissues and organs. This should be considered especially in patients with restricted thermoregulation and in pregnant women and neonates; in these cases exposure should be kept as low as possible. (orig.) [de

Innovation field orientation and its effect on innovativeness and firm performance

DEFF Research Database (Denmark)

Salomo, Søren; Talke, Katrin; Strecker, Nanja

2008-01-01

field orientation is a phenomenon that prevails in practice. In addition, all defining aspects of this orientation have either direct or indirect effects on firm performance. Hence, those firms that deliberately specify and manage innovation fields have a more innovative product portfolio and are more...

Au nanoparticles attached carbon nanotubes as a high performance active element in field effect transistor

Energy Technology Data Exchange (ETDEWEB)

Lee, Myeongsoon; Kim, Don, E-mail: donkim@pknu.ac.kr

2016-08-15

The Au nanoparticles attached carbon nanotubes (Au-CNTs), diameter ranged from 40 to 250 nm, were prepared and discussed their chemical and electrical properties. The shape and crystallinity of the carbon nanotubes (CNTs) phase depended main2ly on the diameter of CNTs (r{sub Au-CNT}). Highly crystalline, straight CNTs were observed when the r{sub Au-CNT} exceeded 80 nm, and less crystalline noodle-shaped CNTs were observed when the r{sub Au-CNT} was smaller than 80 nm. The crystallinity of the CNT phase was confirmed by analyzing the G and D bands in their Raman spectra and the electrical conductivities of the Au-CNTs. The electrical conductivity of the highly crystalline carbon phase of Au-CNTs (r{sub Au-CNT} = 250 nm) was ∼10{sup 4} S/cm. The back-gated field effect transistors (FETs) based on the Au-CNTs, which were assembled on a SiO{sub 2}/Si wafer using the dielectrophoresis technique, showed that the Au-CNTs would be a good functional electronic material for future electronic and sensing applications. The transconductance and hole mobility of the FETs, which were assembled with the highly crystalline Au-CNTs (r{sub Au-CNT} = 250 nm), reached to 3.6 × 10{sup −4} A/V and 3.1 × 10{sup 4} cm{sup 2}/V s, respectively. These values are in the middle of those of reported for single walled carbon nanotubes and graphene. However, we could not find any field effect in a CNTFET, which assembled without Au nanoparticles, through the same process. - Highlights: • The shape and crystallinity of the CNTs depended mainly on the diameter of CNTs. • The electrical conductivity of the highly crystalline Au-CNTs was ∼10{sup 4} S/cm. • The Au-CNT FET shows typical p-channel gate effect with the on/off ratio of ∼10{sup 4}. • The Au-CNT FET shows very high transconductance (g{sub m}) and carrier mobility (μ{sub h}).

Au nanoparticles attached carbon nanotubes as a high performance active element in field effect transistor

International Nuclear Information System (INIS)

Lee, Myeongsoon; Kim, Don

2016-01-01

The Au nanoparticles attached carbon nanotubes (Au-CNTs), diameter ranged from 40 to 250 nm, were prepared and discussed their chemical and electrical properties. The shape and crystallinity of the carbon nanotubes (CNTs) phase depended main2ly on the diameter of CNTs (r_A_u_-_C_N_T). Highly crystalline, straight CNTs were observed when the r_A_u_-_C_N_T exceeded 80 nm, and less crystalline noodle-shaped CNTs were observed when the r_A_u_-_C_N_T was smaller than 80 nm. The crystallinity of the CNT phase was confirmed by analyzing the G and D bands in their Raman spectra and the electrical conductivities of the Au-CNTs. The electrical conductivity of the highly crystalline carbon phase of Au-CNTs (r_A_u_-_C_N_T = 250 nm) was ∼10"4 S/cm. The back-gated field effect transistors (FETs) based on the Au-CNTs, which were assembled on a SiO_2/Si wafer using the dielectrophoresis technique, showed that the Au-CNTs would be a good functional electronic material for future electronic and sensing applications. The transconductance and hole mobility of the FETs, which were assembled with the highly crystalline Au-CNTs (r_A_u_-_C_N_T = 250 nm), reached to 3.6 × 10"−"4 A/V and 3.1 × 10"4 cm"2/V s, respectively. These values are in the middle of those of reported for single walled carbon nanotubes and graphene. However, we could not find any field effect in a CNTFET, which assembled without Au nanoparticles, through the same process. - Highlights: • The shape and crystallinity of the CNTs depended mainly on the diameter of CNTs. • The electrical conductivity of the highly crystalline Au-CNTs was ∼10"4 S/cm. • The Au-CNT FET shows typical p-channel gate effect with the on/off ratio of ∼10"4. • The Au-CNT FET shows very high transconductance (g_m) and carrier mobility (μ_h).

Design of double gate vertical tunnel field effect transistor using HDB and its performance estimation

Science.gov (United States)

Seema; Chauhan, Sudakar Singh

2018-05-01

In this paper, we demonstrate the double gate vertical tunnel field-effect transistor using homo/hetero dielectric buried oxide (HDB) to obtain the optimized device characteristics. In this concern, the existence of double gate, HDB and electrode work-function engineering enhances DC performance and Analog/RF performance. The use of electrostatic doping helps to achieve higher on-current owing to occurrence of higher tunneling generation rate of charge carriers at the source/epitaxial interface. Further, lightly doped drain region and high- k dielectric below channel and drain region are responsible to suppress the ambipolar current. Simulated results clarifies that proposed device have achieved the tremendous performance in terms of driving current capability, steeper subthreshold slope (SS), drain induced barrier lowering (DIBL), hot carrier effects (HCEs) and high frequency parameters for better device reliability.

Respirator field performance factors

International Nuclear Information System (INIS)

Skaggs, B.J.; DeField, J.D.; Strandberg, S.W.; Sutcliffe, C.R.

1985-01-01

The Industrial Hygiene Group assisted OSHA and the NRC in measurements of respirator performance under field conditions. They reviewed problems associated with sampling aerosols within the respirator in order to determine fit factors (FFs) or field performance factor (FPF). In addition, they designed an environmental chamber study to determine the effects of temperature and humidity on a respirator wearer

High mobility polymer gated organic field effect transistor using zinc ...

Indian Academy of Sciences (India)

Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film ... At room temperature, these transistors exhibit p-type conductivity with field-effect ... Keywords. Organic semiconductor; field effect transistor; phthalocyanine; high mobility. ... The evaporation rate was kept at ...

Self-field instabilities in high-$J_{c}$ Nb$_{3}$Sn strands the effect of copper RRR

CERN Document Server

Bordini, B

2009-01-01

High critical current density (Jc) Nb$_{3}$Sn conductor is the best candidate for next generation high field (> 10 T) accelerator magnets. Although very promising, state of the art high-Jc Nb$_{3}$Sn strands suffer of magneto-thermal instabilities that can severely limit the strand performance. Recently it has been shown that at 1.9 K the self field instability is the dominating mechanism that limits the performance of strands with a low (<10) Residual Resistivity Ratio (RRR) of the stabilizing copper. At CERN several state of the art high–Jc Nb$_{3}$Sn wires have been tested at 4.2 K and 1.9 K to study the effects on strand self-field instability of: RRR and strand impregnation with stycast. To study the effect of the RRR value on magneto-thermal instabilities, a new 2-D finite element model was also developed at CERN. This model simulates the whole development of the flux jump in the strand cross section also taking into account the heat and current diffusion in the stabilizing copper. In this paper th...

Irradiation of graphene field effect transistors with highly charged ions

Energy Technology Data Exchange (ETDEWEB)

Ernst, P.; Kozubek, R.; Madauß, L.; Sonntag, J.; Lorke, A.; Schleberger, M., E-mail: marika.schleberger@uni-due.de

2016-09-01

In this work, graphene field-effect transistors are used to detect defects due to irradiation with slow, highly charged ions. In order to avoid contamination effects, a dedicated ultra-high vacuum set up has been designed and installed for the in situ cleaning and electrical characterization of graphene field-effect transistors during irradiation. To investigate the electrical and structural modifications of irradiated graphene field-effect transistors, their transfer characteristics as well as the corresponding Raman spectra are analyzed as a function of ion fluence for two different charge states. The irradiation experiments show a decreasing mobility with increasing fluences. The mobility reduction scales with the potential energy of the ions. In comparison to Raman spectroscopy, the transport properties of graphene show an extremely high sensitivity with respect to ion irradiation: a significant drop of the mobility is observed already at fluences below 15 ions/μm{sup 2}, which is more than one order of magnitude lower than what is required for Raman spectroscopy.

Steering Electromagnetic Fields in MRI: Investigating Radiofrequency Field Interactions with Endogenous and External Dielectric Materials for Improved Coil Performance at High Field

Science.gov (United States)

Vaidya, Manushka

Although 1.5 and 3 Tesla (T) magnetic resonance (MR) systems remain the clinical standard, the number of 7 T MR systems has increased over the past decade because of the promise of higher signal-to-noise ratio (SNR), which can translate to images with higher resolution, improved image quality and faster acquisition times. However, there are a number of technical challenges that have prevented exploiting the full potential of ultra-high field (≥ 7 T) MR imaging (MRI), such as the inhomogeneous distribution of the radiofrequency (RF) electromagnetic field and specific energy absorption rate (SAR), which can compromise image quality and patient safety. To better understand the origin of these issues, we first investigated the dependence of the spatial distribution of the magnetic field associated with a surface RF coil on the operating frequency and electrical properties of the sample. Our results demonstrated that the asymmetries between the transmit (B1+) and receive (B 1-) circularly polarized components of the magnetic field, which are in part responsible for RF inhomogeneity, depend on the electric conductivity of the sample. On the other hand, when sample conductivity is low, a high relative permittivity can result in an inhomogeneous RF field distribution, due to significant constructive and destructive interference patterns between forward and reflected propagating magnetic field within the sample. We then investigated the use of high permittivity materials (HPMs) as a method to alter the field distribution and improve transmit and receive coil performance in MRI. We showed that HPM placed at a distance from an RF loop coil can passively shape the field within the sample. Our results showed improvement in transmit and receive sensitivity overlap, extension of coil field-of-view, and enhancement in transmit/receive efficiency. We demonstrated the utility of this concept by employing HPM to improve performance of an existing commercial head coil for the

Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

Energy Technology Data Exchange (ETDEWEB)

Lee, Sunwoo; Choi, Changhwan; Lee, Kilbock [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Cho, Joong Hwee [Department of Embedded Systems Engineering,University of Incheon, Incheon 406-722 (Korea, Republic of); Ko, Ki-Young [Korea Institute of Patent Information, Seoul, 146-8 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of)

2012-10-30

We report the effect of consecutive electrical stress on the performance of organic field effect transistors (OFETs). Sputtered aluminum oxide (Al{sub 2}O{sub 3}) and hafnium oxide (HfO{sub 2}) were used as gate oxide layers. After the electrical stress, the threshold voltage, which strongly depends on bulk defects, was remarkably shifted to the negative direction, while the other performance characteristics of OFETs such as on-current, transconductance and mobility, which are sensitive to interface defects, were slightly decreased. This result implies that the defects in the bulk layer are significantly affected compared to the defects in the interface layer. Thus, it is important to control the defects in the pentacene bulk layer in order to maintain the good reliabilities of pentacene devices. Those defects in HfO{sub 2} gate oxide devices were larger compared to those in Al{sub 2}O{sub 3} gate oxide devices.

Electric Field Guided Assembly of One-Dimensional Nanostructures for High Performance Sensors

Directory of Open Access Journals (Sweden)

Wing Kam Liu

2012-05-01

Full Text Available Various nanowire or nanotube-based devices have been demonstrated to fulfill the anticipated future demands on sensors. To fabricate such devices, electric field-based methods have demonstrated a great potential to integrate one-dimensional nanostructures into various forms. This review paper discusses theoretical and experimental aspects of the working principles, the assembled structures, and the unique functions associated with electric field-based assembly. The challenges and opportunities of the assembly methods are addressed in conjunction with future directions toward high performance sensors.

High performance dendrimer functionalized single-walled carbon nanotubes field effect transistor biosensor for protein detection

Science.gov (United States)

Rajesh, Sharma, Vikash; Puri, Nitin K.; Mulchandani, Ashok; Kotnala, Ravinder K.

2016-12-01

We report a single-walled carbon nanotube (SWNT) field-effect transistor (FET) functionalized with Polyamidoamine (PAMAM) dendrimer with 128 carboxyl groups as anchors for site specific biomolecular immobilization of protein antibody for C-reactive protein (CRP) detection. The FET device was characterized by scanning electron microscopy and current-gate voltage (I-Vg) characteristic studies. A concentration-dependent decrease in the source-drain current was observed in the regime of clinical significance, with a detection limit of ˜85 pM and a high sensitivity of 20% change in current (ΔI/I) per decade CRP concentration, showing SWNT being locally gated by the binding of CRP to antibody (anti-CRP) on the FET device. The low value of the dissociation constant (Kd = 0.31 ± 0.13 μg ml-1) indicated a high affinity of the device towards CRP analyte arising due to high anti-CRP loading with a better probe orientation on the 3-dimensional PAMAM structure.

Study of the performance of HPGe detectors operating in very high magnetic fields

International Nuclear Information System (INIS)

Agnello, M.; Botta, E.; Bressani, T.; Bruschi, M.; Bufalino, S.; De Napoli, M.; Feliciello, A.; Fontana, A.; Giacobbe, B.; Lavezzi, L.; Raciti, G.; Rapisarda, E.; Rotondi, A.; Sbarra, C.; Sfienti, C.; Zoccoli, A.

2009-01-01

A new generation of high-resolution hypernuclear γ-spectroscopy experiments using high-purity germanium (HPGe) detectors is presently designed for the FINUDA spectrometer at DAΦNE, the Frascati Φ-factory, and for PANDA, the p-p-bar hadron spectrometer at the future FAIR facility. In both spectrometers the HPGe detectors have to be operated in strong magnetic fields. In this paper we report on a series of measurements performed on a HPGe detector inserted in a magnetic field of intensity up to 2.5 T, the highest ever reached for operations with a HPGe, and with different orientations of the detector's axis with respect to field direction. A significant worsening of the energy resolution was found, but with a moderate loss of the efficiency. The most relevant features of the peak shapes, described by bi-Gaussian functions, are parametrized in terms of field intensity and energy: this allows to correct the spectra measured in magnetic field and to recover the energy resolution almost completely.

Dynamic Incentive Effects of Relative Performance Pay: A Field Experiment

NARCIS (Netherlands)

J. Delfgaauw (Josse); A.J. Dur (Robert); J.A. Non (Arjan); W.J.M.I. Verbeke (Willem)

2010-01-01

textabstractWe conduct a field experiment among 189 stores of a retail chain to study dynamic incentive effects of relative performance pay. Employees in the randomly selected treatment stores could win a bonus by outperforming three comparable stores from the control group over the course of four

The importance of the radial electric field (Er) on interpretation of motional Stark effect measurements of the q profile in DIII-D high performance plasmas

International Nuclear Information System (INIS)

Rice, B.W.; Lao, L.L.; Burrell, K.H.; Greenfield, C.M.; Lin-Liu, Y.R.

1997-06-01

The development of enhanced confinement regimes such as negative central magnetic shear (NCS) and VH-mode illustrates the importance of the q profile and ExB velocity shear in improving stability and confinement in tokamak plasmas. Recently, it was realized that the large values of radial electric field observed in these high performance plasmas, up to 200 kV/m in DIII-D, have an effect on the interpretation of motional Stark effect (MSE) measurements of the q profile. It has also been shown that, with additional MSE measurements, one can extract a direct measurement of E r in addition to the usual poloidal field measurement. During a recent vent on DIII-D, 19 additional MSE channels with new viewing angles were added (for a total of 35 channels) in order to descriminate between the neutral beam v b x B electric field and the plasma E r field. In this paper, the system upgrade will be described and initial measurements demonstrating simultaneous measurement of the q and E r profiles will be presented

Proceedings from the technical workshop on near-field performance assessment for high-level waste

International Nuclear Information System (INIS)

Sellin, P.; Apted, M.; Gago, J.

1991-12-01

This report contains the proceedings of 'Technical workshop of near-filed performance assessment for high-level waste' held in Madrid October 15-17, 1990. It includes the invited presentations and summaries of the scientific discussions. The workshop covered several topics: * post-emplacement environment, * benchmarking of computer codes, * glass release, * spent-fuel release, * radionuclide solubility, * near-field transport processes, * coupled processes in the near-field, * integrated assessments, * sensitivity analyses and validation. There was an invited presentation on each topic followed by an extensive discussion. One of the points highlighted in the closing discussion of the workshop was the need for international cooperation in the field of near-field performance assessment. The general opinion was that this was best achieved in smaller groups discussing specific questions. (au) Separate abstracts were prepared for 9 papers in this volume

3D NANOTUBE FIELD EFFECT TRANSISTORS FOR HYBRID HIGH-PERFORMANCE AND LOW-POWER OPERATION WITH HIGH CHIP-AREA EFFICIENCY

KAUST Repository

Fahad, Hossain M.

2014-03-01

scaling on silicon, the amount of current generated per device has to be increased while keeping short channel effects and off-state leakage at bay. The objective of this doctoral thesis is the investigation of an innovative vertical silicon based architecture called the silicon nanotube field effect transistor (Si NTFET). This topology incorporates a dual inner/outer core/shell gate stack strategy to control the volume inversion properties in a hollow silicon 1D quasi-nanotube under a tight electrostatic configuration. Together with vertically aligned source and drain, the Si NTFET is capable of very high on-state performance (drive current) in an area-efficient configuration as opposed to arrays of gate-all-around nanowires, while maintaining leakage characteristics similar to a single nanowire. Such a device architecture offsets the need of device arraying that is needed with fin and nanowire architectures. Extensive simulations are used to validate the potential benefits of Si NTFETs over GAA NWFETs on a variety of platforms such as conventional MOSFETs, tunnel FETs, junction-less FETs. This thesis demonstrates a novel CMOS compatible process flow to fabricate vertical nanotube transistors that offer a variety of advantages such as lithography-independent gate length definition, integration of epitaxially grown silicon nanotubes with spacer based gate dielectrics and abrupt in-situ doped source/drain junctions. Experimental measurement data will showcase the various materials and processing challenges in fabricating these devices. Finally, an extension of this work to topologically transformed wavy channel FinFETs is also demonstrated keeping in line with the theme of area efficient high-performance electronics.

Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

International Nuclear Information System (INIS)

But, D. B.; Drexler, C.; Ganichev, S. D.; Sakhno, M. V.; Sizov, F. F.; Dyakonova, N.; Drachenko, O.; Gutin, A.; Knap, W.

2014-01-01

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm 2 was studied for Si metal–oxide–semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation intensity up to the kW/cm 2 range. Nonlinearity followed by saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm 2 . The observed photoresponse nonlinearity is explained by nonlinearity and saturation of the transistor channel current. A theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitative experimental data both in linear and nonlinear regions. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orders of magnitudes of power densities (from ∼0.5 mW/cm 2 to ∼5 kW/cm 2 )

Ballistic-type field penetration into metals illustrated by high- and low-frequency size-effect measurements in silver

DEFF Research Database (Denmark)

Gantmakher, V. F.; Lebech, Jens; Bak, Christen Kjeldahl

1979-01-01

Radio-frequency size-effect experiments were performed on silver plane-parallel plates at high, 45 GHz, and low, 3 MHz, frequencies. By investigation of size-effect structures we show the influence of frequency on the field distribution inside the metal. When the frequency increases, the splash...

High-Performance Field Emission from a Carbonized Cork.

Science.gov (United States)

Lee, Jeong Seok; Lee, Hak Jun; Yoo, Jae Man; Kim, Taewoo; Kim, Yong Hyup

2017-12-20

To broaden the range of application of electron beams, low-power field emitters are needed that are miniature and light. Here, we introduce carbonized cork as a material for field emitters. The light natural cork becomes a graphitic honeycomb upon carbonization, with the honeycomb cell walls 100-200 nm thick and the aspect ratio larger than 100, providing an ideal structure for the field electron emission. Compared to nanocarbon field emitters, the cork emitter produces a high current density and long-term stability with a low turn-on field. The nature of the cork material makes it quite simple to fabricate the emitter. Furthermore, any desired shape of the emitter tailored for the final application can easily be prepared for point, line, or planar emission.

[Effects of psychological stress on performances in open-field test of rats and tyrosine's modulation].

Science.gov (United States)

Chen, Wei-Qiang; Cheng, Yi-Yong; Li, Shu-Tian; Hong, Yan; Wang, Dong-Lan; Hou, Yue

2009-02-01

To explore the effects of different doses of tyrosine modulation on behavioral performances in open field test of psychological stress rats. The animal model of psychological stress was developed by restraint stress for 21 days. Wistar rats were randomly assigned to five groups (n = 10) as follows: control group (CT), stress control group (SCT), low, medium and high-doses of tyrosine modulation stress groups (SLT, SMT and SIT). The changes of behavioral performances were examined by open-field test. Serum levels of cortisol, norepinephrine and dopamine were also detected. The levels of serum cortisol were all increased obviously in the four stress groups, and their bodyweight gainings were diminished. The behavioral performances of SCT rats in open-field test were changed significantly in contrast to that of CT rats. However, The behavioral performances of SMT and SHT rats were not different from that of CT rats. In addition, the serum levels of norepinephrine and dopamine were downregulated obviously in SCT and SLT groups, and no differences were observed in other groups. Psychological stress can impair body behavioral performances, and moderate tyrosine modulation may improve these abnormal changes. The related mechanisms may be involved with the changes of norepinephrine and dopamine.

Microwave annealing effect for highly reliable biosensor: dual-gate ion-sensitive field-effect transistor using amorphous InGaZnO thin-film transistor.

Science.gov (United States)

Lee, In-Kyu; Lee, Kwan Hyi; Lee, Seok; Cho, Won-Ju

2014-12-24

We used a microwave annealing process to fabricate a highly reliable biosensor using amorphous-InGaZnO (a-IGZO) thin-film transistors (TFTs), which usually experience threshold voltage instability. Compared with furnace-annealed a-IGZO TFTs, the microwave-annealed devices showed superior threshold voltage stability and performance, including a high field-effect mobility of 9.51 cm(2)/V·s, a low threshold voltage of 0.99 V, a good subthreshold slope of 135 mV/dec, and an outstanding on/off current ratio of 1.18 × 10(8). In conclusion, by using the microwave-annealed a-IGZO TFT as the transducer in an extended-gate ion-sensitive field-effect transistor biosensor, we developed a high-performance biosensor with excellent sensing properties in terms of pH sensitivity, reliability, and chemical stability.

Growth anisotropy effect of bulk high temperature superconductors on the levitation performance in the applied magnetic field

Science.gov (United States)

Zheng, J.; Liao, X. L.; Jing, H. L.; Deng, Z. G.; Yen, F.; Wang, S. Y.; Wang, J. S.

2013-10-01

Growth anisotropies of bulk high temperature superconductors (HTSCs) fabricated by a top-seeded melt texture growth process, that is, different pinning effect in the growth sectors (GSs) and growth sector boundaries (GSBs), possess effect on the macro flux trapping and levitation performance of bulk HTSCs. Previous work (Physics Procedia, 36 (2012) 1043) has found that the bulk HTSC array with aligned GSB pattern (AGSBP) exhibits better capability for levitation and suppression of levitation force decay above a permanent magnet guideway (PMG) compared with misaligned GSB pattern (MGSBP). In this paper, we further examine this growth anisotropy effect on the maglev performance of a double-layer bulk HTSC. In contrast to reported trapped flux cases (Supercond. Sci. Technol. 19 (2006) S466), the two superposed bulk HTSCs with same AGSBP with PMG are found to show better maglev performance. These series of results are helpful and support a new way for the performance optimization of present HTS maglev systems.

Levitation performance of the magnetized bulk high-T{sub c} superconducting magnet with different trapped fields

Energy Technology Data Exchange (ETDEWEB)

Liu, W. [Applied Superconductivity Laboratory, Southwest Jiaotong University (ASCLab), Chengdu, Sichuan 610031 (China); State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); National Laboratory of Rail Transit, Chengdu, Sichuan 610031 (China); Wang, J.S., E-mail: tonny@mars.swjtu.edu.c [Applied Superconductivity Laboratory, Southwest Jiaotong University (ASCLab), Chengdu, Sichuan 610031 (China); National Laboratory of Rail Transit, Chengdu, Sichuan 610031 (China); Liao, X.L.; Zheng, S.J.; Ma, G.T.; Zheng, J. [Applied Superconductivity Laboratory, Southwest Jiaotong University (ASCLab), Chengdu, Sichuan 610031 (China); State Key Laboratory of Traction Power, Southwest Jiaotong University, Chengdu, Sichuan 610031 (China); National Laboratory of Rail Transit, Chengdu, Sichuan 610031 (China); Wang, S.Y. [Applied Superconductivity Laboratory, Southwest Jiaotong University (ASCLab), Chengdu, Sichuan 610031 (China); National Laboratory of Rail Transit, Chengdu, Sichuan 610031 (China)

2011-03-15

Research highlights: {yields} The different trapped fields bring entirely different levitation performance. {yields} The force relaxation characters is directly bound up with the trapped field. {yields} The higher trapped field not means better levitation performance. {yields} An profitable internal induced current configuration will benefit to suppress flux motion. - Abstract: To a high-T{sub c} superconducting (HTS) maglev system which needs large levitation force density, the magnetized bulk high-T{sub c} superconductor (HTSC) magnet is a good candidate because it can supply additional repulsive or attractive force above a permanent magnet guideway (PMG). Because the induced supercurrent within a magnetized bulk HTSC is the key parameter for the levitation performance, and it is sensitive to the magnetizing process and field, so the magnetized bulk HTSC magnets with different magnetizing processes had various levitation performances, not only the force magnitude, but also its force relaxation characteristics. Furthermore, the distribution and configuration of the induced supercurrent are also important factor to decide the levitation performance, especially the force relaxation characteristics. This article experimentally investigates the influences of different magnetizing processes and trapped fields on the levitation performance of a magnetized bulk HTSC magnet with smaller size than the magnetic inter-pole distance of PMG, and the obtained results are qualitatively analyzed by the Critical State Model. The test results and analyses of this article are useful for the suitable choice and optimal design of magnetized bulk HTSC magnets.

High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

Science.gov (United States)

Gupta, Bipin Kumar; Kedawat, Garima; Gangwar, Amit Kumar; Nagpal, Kanika; Kashyap, Pradeep Kumar; Srivastava, Shubhda; Singh, Satbir; Kumar, Pawan; Suryawanshi, Sachin R.; Seo, Deok Min; Tripathi, Prashant; More, Mahendra A.; Srivastava, O. N.; Hahm, Myung Gwan; Late, Dattatray J.

2018-01-01

The vertical aligned carbon nanotubes (CNTs)-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si) wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness) as a barrier layer and iron (Fe, 1.5 nm thickness) as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM) images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2-30 walls with an inner diameter of 3-8 nm. Raman spectrum analysis shows G-band at 1580 cm-1 and D-band at 1340 cm-1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm), low turn-on field (0.6 V/μm) and field enhancement factor (6917) with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.

High-performance field emission device utilizing vertically aligned carbon nanotubes-based pillar architectures

Directory of Open Access Journals (Sweden)

Bipin Kumar Gupta

2018-01-01

Full Text Available The vertical aligned carbon nanotubes (CNTs-based pillar architectures were created on laminated silicon oxide/silicon (SiO2/Si wafer substrate at 775 °C by using water-assisted chemical vapor deposition under low pressure process condition. The lamination was carried out by aluminum (Al, 10.0 nm thickness as a barrier layer and iron (Fe, 1.5 nm thickness as a catalyst precursor layer sequentially on a silicon wafer substrate. Scanning electron microscope (SEM images show that synthesized CNTs are vertically aligned and uniformly distributed with a high density. The CNTs have approximately 2–30 walls with an inner diameter of 3–8 nm. Raman spectrum analysis shows G-band at 1580 cm−1 and D-band at 1340 cm−1. The G-band is higher than D-band, which indicates that CNTs are highly graphitized. The field emission analysis of the CNTs revealed high field emission current density (4mA/cm2 at 1.2V/μm, low turn-on field (0.6 V/μm and field enhancement factor (6917 with better stability and longer lifetime. Emitter morphology resulting in improved promising field emission performances, which is a crucial factor for the fabrication of pillared shaped vertical aligned CNTs bundles as practical electron sources.

High field-effect mobility at the (Sr,Ba)SnO{sub 3}/BaSnO{sub 3} interface

Energy Technology Data Exchange (ETDEWEB)

Fujiwara, Kohei, E-mail: kfujiwara@imr.tohoku.ac.jp; Nishihara, Kazuki; Shiogai, Junichi; Tsukazaki, Atsushi [Institute for Materials Research, Tohoku University, Sendai 980-8577 (Japan)

2016-08-15

A perovskite oxide, BaSnO{sub 3}, has been classified as one of transparent conducting materials with high electron mobility, and its application for field-effect transistors has been the focus of recent research. Here we report transistor operation in BaSnO{sub 3}-based heterostructures with atomically smooth surfaces, fabricated on SrTiO{sub 3} substrates by the (Sr,Ba)SnO{sub 3} buffer technique. Indeed, modulation of band profiles at the channel interfaces with the insertion of wide bandgap (Sr,Ba)SnO{sub 3} as a barrier layer results in a significant improvement of field-effect mobility, implying effective carrier doping at the regulated heterointerface. These results provide an important step towards realization of high-performance BaSnO{sub 3}-based field-effect transistors.

Polymer-Sorted Semiconducting Carbon Nanotube Networks for High-Performance Ambipolar Field-Effect Transistors

Science.gov (United States)

2014-01-01

Efficient selection of semiconducting single-walled carbon nanotubes (SWNTs) from as-grown nanotube samples is crucial for their application as printable and flexible semiconductors in field-effect transistors (FETs). In this study, we use atactic poly(9-dodecyl-9-methyl-fluorene) (a-PF-1-12), a polyfluorene derivative with asymmetric side-chains, for the selective dispersion of semiconducting SWNTs with large diameters (>1 nm) from plasma torch-grown SWNTs. Lowering the molecular weight of the dispersing polymer leads to a significant improvement of selectivity. Combining dense semiconducting SWNT networks deposited from an enriched SWNT dispersion with a polymer/metal-oxide hybrid dielectric enables transistors with balanced ambipolar, contact resistance-corrected mobilities of up to 50 cm2·V–1·s–1, low ohmic contact resistance, steep subthreshold swings (0.12–0.14 V/dec) and high on/off ratios (106) even for short channel lengths (<10 μm). These FETs operate at low voltages (<3 V) and show almost no current hysteresis. The resulting ambipolar complementary-like inverters exhibit gains up to 61. PMID:25493421

Effect of magnetic water on strength and workability of high performance concrete

Directory of Open Access Journals (Sweden)

Moosa Mazloom

2016-09-01

Full Text Available Nowadays, concrete is one of the most important and widely used human product. Improving concrete characteristics have always been one of the fundamental subjects for engineers. Improve the physical properties of water, as one of the main elements of concrete, is one way to improve the characteristics of the concrete. When water passes through the magnetic field, its physical quality has changed, it is called Magnetic water. This study examines the effect of the use of magnetized water (MW with a solenoid current-carrying, on the compressive strength and workability of high performance concrete. The variables of this study were the intensity of magnetic field, the silica fume replacement level and water to cement ratio in different mixes. The results show that using MW increases the workability of concrete about 36% in average.MW in combination with superplasticizer is more effective than MW on workability and compressive strength of concrete. MW had more positive effects on the samples without silica fume. Increasing the intensity of magnetic field improved the workability, 28 and 90 days compressive strength concrete.

A predictive analytic model for high-performance tunneling field-effect transistors approaching non-equilibrium Green's function simulations

International Nuclear Information System (INIS)

Salazar, Ramon B.; Appenzeller, Joerg; Ilatikhameneh, Hesameddin; Rahman, Rajib; Klimeck, Gerhard

2015-01-01

A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-transistors (TFETs) based on homojunction direct-bandgap semiconductors. The model is based on an analytic description of two key features, which capture the main physical phenomena related to TFETs: (1) the potential profile from source to channel and (2) the elliptic curvature of the complex bands in the bandgap region. It is proposed to use 1D Poisson's equations in the source and the channel to describe the potential profile in homojunction TFETs. This allows to quantify the impact of source/drain doping on device performance, an aspect usually ignored in TFET modeling but highly relevant in ultra-scaled devices. The compact model is validated by comparison with state-of-the-art quantum transport simulations using a 3D full band atomistic approach based on non-equilibrium Green's functions. It is shown that the model reproduces with good accuracy the data obtained from the simulations in all regions of operation: the on/off states and the n/p branches of conduction. This approach allows calculation of energy-dependent band-to-band tunneling currents in TFETs, a feature that allows gaining deep insights into the underlying device physics. The simplicity and accuracy of the approach provide a powerful tool to explore in a quantitatively manner how a wide variety of parameters (material-, size-, and/or geometry-dependent) impact the TFET performance under any bias conditions. The proposed model presents thus a practical complement to computationally expensive simulations such as the 3D NEGF approach

Germanium field-effect transistor made from a high-purity substrate

International Nuclear Information System (INIS)

Hansen, W.L.; Goulding, F.S.; Haller, E.E.

1978-11-01

Field effect transistors have been fabricated on high-purity germanium substrates using low-temperature technology. The aim of this work is to preserve the low density of trapping centers in high-quality starting material by low-temperature ( 0 C) processing. The use of germanium promises to eliminate some of the traps which cause generation-recombination noise in silicon field-effect transistors (FET's) at low temperatures. Typically, the transconductance (g/sub m/) in the germanium FET's is 10 mA/V and the gate leakage can be less than 10 -12 A. Present devices exhibit a large 1/f noise component and most of this noise must be eliminated if they are to be competitive with silicon FET's commonly used in high-resolution nuclear spectrometers

Effects of magnetic fields during high voltage live-line maintenance

Science.gov (United States)

Göcsei, Gábor; Kiss, István, Dr; Németh, Bálint

2015-10-01

In case of transmission and distribution networks, extra low frequency (typically 50 or 60 Hz) electric and magnetic fields have to be taken into consideration separately from each other. Health effects have been documented from exposures to both types of fields. Magnetic fields are qualified as possibly carcinogenic to humans (category “2B”) by WHO's cancer research institute, International Agency for Research on Cancer (IARC), so it is essential to protect the workers against their harmful effects. During live-line maintenance (LLM) electric fields can be shielded effectively by different kinds of conductive clothing, which are enclosed metal surfaces acting as a Faraday-cage. In practice laboratory measurements also prove their efficiency, the required shielding ratio is above 99% by the related standard.. A set of measurements have proved that regular conductive clothing used against the electric fields cannot shield the magnetic fields effectively at all. This paper introduces the possible risks of LLM from the aspect of the health effects of magnetic fields. Although in this case the principle of shielding the electric fields cannot be applied, new considerations in equipment design and technology can be used as a possible solution. Calculations and simulations based on the data of the Hungarian transmission network - which represents the European grid as a part of ENTSO-E - and high-current laboratory measurement results also prove the importance of the topic.

High-sensitivity dc field magnetometer using nonlinear resonance magnetoelectric effect

International Nuclear Information System (INIS)

Burdin, D.A.; Chashin, D.V.; Ekonomov, N.A.; Fetisov, Y.K.; Stashkevich, A.A.

2016-01-01

The design and operation principle of dc field magnetometer using nonlinear resonance magnetoelectric effect in a ferromagnetic–piezoelectric structure are described. It is shown that under action of ac pumping magnetic field the structure generates the output voltage containing higher harmonics whose amplitudes depend on the dc magnetic field. Best performance of the device is obtained if the signal of the third harmonics is used for the dc field measurement. The sensitivity can be considerably (by approximately three orders of magnitude) increased if advantage is taken of the acoustic resonance of the structure at this frequency. There exists the optimal pumping field ensuring the highest sensitivity. Further increasing of this field expands the range of measurable dc fields at the expense of deteriorated sensitivity. The magnetometer fabricated on the basis of a planar langatate-Metglas structure had sensitivity up to ~1 V/Oe and allowed detection of the fields as low as ~10"−"5 Oe. - Highlights: • Operational principle and design of new type dc field magnetometer is described. • Magnetometer uses nonlinear magnetoelectric effect in a langatate-Metglas structure. • Magnetometer has sensitivity of ~1 V/Oe and detects fields as low as 10"−"5 Oe. • The proposed magnetometer can compete with well known fluxgate sensors.

High-sensitivity dc field magnetometer using nonlinear resonance magnetoelectric effect

Energy Technology Data Exchange (ETDEWEB)

Burdin, D.A.; Chashin, D.V.; Ekonomov, N.A. [Moscow State University of Information Technologies, Radio Engineering and Electronics, Moscow (Russian Federation); Fetisov, Y.K., E-mail: fetisov@mirea.ru [Moscow State University of Information Technologies, Radio Engineering and Electronics, Moscow (Russian Federation); Stashkevich, A.A. [LSPM (CNRS-UPR 3407), Université Paris 13, Sorbonne Paris Cité, 93430 Villetaneuse (France)

2016-05-01

The design and operation principle of dc field magnetometer using nonlinear resonance magnetoelectric effect in a ferromagnetic–piezoelectric structure are described. It is shown that under action of ac pumping magnetic field the structure generates the output voltage containing higher harmonics whose amplitudes depend on the dc magnetic field. Best performance of the device is obtained if the signal of the third harmonics is used for the dc field measurement. The sensitivity can be considerably (by approximately three orders of magnitude) increased if advantage is taken of the acoustic resonance of the structure at this frequency. There exists the optimal pumping field ensuring the highest sensitivity. Further increasing of this field expands the range of measurable dc fields at the expense of deteriorated sensitivity. The magnetometer fabricated on the basis of a planar langatate-Metglas structure had sensitivity up to ~1 V/Oe and allowed detection of the fields as low as ~10{sup −5} Oe. - Highlights: • Operational principle and design of new type dc field magnetometer is described. • Magnetometer uses nonlinear magnetoelectric effect in a langatate-Metglas structure. • Magnetometer has sensitivity of ~1 V/Oe and detects fields as low as 10{sup −5} Oe. • The proposed magnetometer can compete with well known fluxgate sensors.

Magnetic fields and scintillator performance

International Nuclear Information System (INIS)

Green, D.; Ronzhin, A.; Hagopian, V.

1995-06-01

Experimental data have shown that the light output of a scintillator depends on the magnitude of the externally applied magnetic fields, and that this variation can affect the calorimeter calibration and possibly resolution. The goal of the measurements presented here is to study the light yield of scintillators in high magnetic fields in conditions that are similar to those anticipated for the LHC CMS detector. Two independent measurements were performed, the first at Fermilab and the second at the National High Magnetic Field Laboratory at Florida State University

Effects of magnetic fields during high voltage live-line maintenance

International Nuclear Information System (INIS)

Göcsei, Gábor; Kiss, Dr István; Németh, Bálint

2015-01-01

In case of transmission and distribution networks, extra low frequency (typically 50 or 60 Hz) electric and magnetic fields have to be taken into consideration separately from each other. Health effects have been documented from exposures to both types of fields. Magnetic fields are qualified as possibly carcinogenic to humans (category “2B”) by WHO's cancer research institute, International Agency for Research on Cancer (IARC), so it is essential to protect the workers against their harmful effects. During live-line maintenance (LLM) electric fields can be shielded effectively by different kinds of conductive clothing, which are enclosed metal surfaces acting as a Faraday-cage. In practice laboratory measurements also prove their efficiency, the required shielding ratio is above 99% by the related standard.. A set of measurements have proved that regular conductive clothing used against the electric fields cannot shield the magnetic fields effectively at all. This paper introduces the possible risks of LLM from the aspect of the health effects of magnetic fields. Although in this case the principle of shielding the electric fields cannot be applied, new considerations in equipment design and technology can be used as a possible solution. Calculations and simulations based on the data of the Hungarian transmission network - which represents the European grid as a part of ENTSO-E - and high-current laboratory measurement results also prove the importance of the topic. (paper)

High-performance computing using FPGAs

CERN Document Server

Benkrid, Khaled

2013-01-01

This book is concerned with the emerging field of High Performance Reconfigurable Computing (HPRC), which aims to harness the high performance and relative low power of reconfigurable hardware–in the form Field Programmable Gate Arrays (FPGAs)–in High Performance Computing (HPC) applications. It presents the latest developments in this field from applications, architecture, and tools and methodologies points of view. We hope that this work will form a reference for existing researchers in the field, and entice new researchers and developers to join the HPRC community.  The book includes:  Thirteen application chapters which present the most important application areas tackled by high performance reconfigurable computers, namely: financial computing, bioinformatics and computational biology, data search and processing, stencil computation e.g. computational fluid dynamics and seismic modeling, cryptanalysis, astronomical N-body simulation, and circuit simulation.     Seven architecture chapters which...

LLNL high-field coil program

International Nuclear Information System (INIS)

Miller, J.R.

1986-01-01

An overview is presented of the LLNL High-Field Superconducting Magnet Development Program wherein the technology is being developed for producing fields in the range of 15 T and higher for both mirror and tokamak applications. Applications requiring less field will also benefit from this program. In addition, recent results on the thermomechanical performance of cable-in-conduit conductor systems are presented and their importance to high-field coil design discussed

High Performance Electronics on Flexible Silicon

KAUST Repository

Sevilla, Galo T.

2016-09-01

Over the last few years, flexible electronic systems have gained increased attention from researchers around the world because of their potential to create new applications such as flexible displays, flexible energy harvesters, artificial skin, and health monitoring systems that cannot be integrated with conventional wafer based complementary metal oxide semiconductor processes. Most of the current efforts to create flexible high performance devices are based on the use of organic semiconductors. However, inherent material\\'s limitations make them unsuitable for big data processing and high speed communications. The objective of my doctoral dissertation is to develop integration processes that allow the transformation of rigid high performance electronics into flexible ones while maintaining their performance and cost. In this work, two different techniques to transform inorganic complementary metal-oxide-semiconductor electronics into flexible ones have been developed using industry compatible processes. Furthermore, these techniques were used to realize flexible discrete devices and circuits which include metal-oxide-semiconductor field-effect-transistors, the first demonstration of flexible Fin-field-effect-transistors, and metal-oxide-semiconductors-based circuits. Finally, this thesis presents a new technique to package, integrate, and interconnect flexible high performance electronics using low cost additive manufacturing techniques such as 3D printing and inkjet printing. This thesis contains in depth studies on electrical, mechanical, and thermal properties of the fabricated devices.

High field Q slope and the baking effect: Review of recent experimental results and new data on Nb heat treatments

Directory of Open Access Journals (Sweden)

G. Ciovati

2010-02-01

Full Text Available The performance of superconducting radio-frequency (SRF cavities made of bulk Nb at high fields (peak surface magnetic field greater than about 90 mT is characterized by exponentially increasing rf losses (high-field Q slope, in the absence of field emission, which are often mitigated by low-temperature (100–140°C, 12–48 h baking. In this contribution, recent experimental results and phenomenological models to explain this effect will be briefly reviewed. New experimental results on the high-field Q slope will be presented for cavities that had been heat treated in a vacuum furnace at high temperature without subsequent chemical etching. These studies are aimed at understanding the role of hydrogen on the high-field Q slope and at the passivation of the Nb surface during heat treatment. Improvement of the cavity performances, particularly of the cavities’ quality factor, have been obtained following the high-temperature heat treatments, while secondary ion mass spectroscopy surface analysis measurements on Nb samples treated with the cavities revealed significantly lower hydrogen concentration than for samples that followed standard cavity treatments.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

Science.gov (United States)

Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

2017-03-22

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

Students' performance in accounting: differential effect of field dependence-independence as a learning style.

Science.gov (United States)

Bernardi, Richard A

2003-08-01

This study examined the differential moderating effects associated with field dependence-independence and perceptions of stress on students' performance after controlling for SAT Mathematics and Verbal scores as well as students' actual effort on homework. The average performance of 178 third-year accounting majors over three examinations was used to evaluate their understanding of financial accounting. The students also took the Group Embedded Figures Test. While the data indicate that the most significant variables were students' effort, SAT Verbal scores, and their perceptions of stress, these variables were differentially associated with students' performance depending upon whether the student was classified as a field-independent or field-dependent learner.

Online virtual isocenter based radiation field targeting for high performance small animal microirradiation

Science.gov (United States)

Stewart, James M. P.; Ansell, Steve; Lindsay, Patricia E.; Jaffray, David A.

2015-12-01

Advances in precision microirradiators for small animal radiation oncology studies have provided the framework for novel translational radiobiological studies. Such systems target radiation fields at the scale required for small animal investigations, typically through a combination of on-board computed tomography image guidance and fixed, interchangeable collimators. Robust targeting accuracy of these radiation fields remains challenging, particularly at the millimetre scale field sizes achievable by the majority of microirradiators. Consistent and reproducible targeting accuracy is further hindered as collimators are removed and inserted during a typical experimental workflow. This investigation quantified this targeting uncertainty and developed an online method based on a virtual treatment isocenter to actively ensure high performance targeting accuracy for all radiation field sizes. The results indicated that the two-dimensional field placement uncertainty was as high as 1.16 mm at isocenter, with simulations suggesting this error could be reduced to 0.20 mm using the online correction method. End-to-end targeting analysis of a ball bearing target on radiochromic film sections showed an improved targeting accuracy with the three-dimensional vector targeting error across six different collimators reduced from 0.56+/- 0.05 mm (mean  ±  SD) to 0.05+/- 0.05 mm for an isotropic imaging voxel size of 0.1 mm.

Performance of a superconducting, high field subcentimeter undulator

International Nuclear Information System (INIS)

Ben-Zvi, I.; Fernow, R.; Gallardo, J.; Ingold, G.; Sampson, W.; Woodle, M.

1991-01-01

A Superconducting 8.80mm wavelength undulator is under construction for the 500nm Free-Electron Laser at the Accelerator Test Facility (ATF) at Brookhaven National Laboratory. We present results on the design, construction and performance of this novel undulator structure. A field on axis of 0.51T has been measured for a 4.40mm gap, with a current 20% below the quench current. Our simple design focuses on minimizing the accumulation of errors by minimizing the numbers of parts and by using a ferromagnetic yoke. The magnetic field error is less than 0.30% rms as manufactured (without shimming). The third harmonic content is less than 0.1% of the fundamental

Optimization of L-shaped tunneling field-effect transistor for ambipolar current suppression and Analog/RF performance enhancement

Science.gov (United States)

Li, Cong; Zhao, Xiaolong; Zhuang, Yiqi; Yan, Zhirui; Guo, Jiaming; Han, Ru

2018-03-01

L-shaped tunneling field-effect transistor (LTFET) has larger tunnel area than planar TFET, which leads to enhanced on-current ION . However, LTFET suffers from severe ambipolar behavior, which needs to be further optimized for low power and high-frequency applications. In this paper, both hetero-gate-dielectric (HGD) and lightly doped drain (LDD) structures are introduced into LTFET for suppression of ambipolarity and improvement of analog/RF performance of LTFET. Current-voltage characteristics, the variation of energy band diagrams, distribution of band-to-band tunneling (BTBT) generation and distribution of electric field are analyzed for our proposed HGD-LDD-LTFET. In addition, the effect of LDD on the ambipolar behavior of LTFET is investigated, the length and doping concentration of LDD is also optimized for better suppression of ambipolar current. Finally, analog/RF performance of HGD-LDD-LTFET are studied in terms of gate-source capacitance, gate-drain capacitance, cut-off frequency, and gain bandwidth production. TCAD simulation results show that HGD-LDD-LTFET not only drastically suppresses ambipolar current but also improves analog/RF performance compared with conventional LTFET.

High-performance insulator structures for accelerator applications

International Nuclear Information System (INIS)

Sampayan, S.E.; Caporaso, G.J.; Sanders, D.M.; Stoddard, R.D.; Trimble, D.O.; Elizondo, J.; Krogh, M.L.; Wieskamp, T.F.

1997-05-01

A new, high gradient insulator technology has been developed for accelerator systems. The concept involves the use of alternating layers of conductors and insulators with periods of order 1 mm or less. These structures perform many times better (about 1.5 to 4 times higher breakdown electric field) than conventional insulators in long pulse, short pulse, and alternating polarity applications. We describe our ongoing studies investigating the degradation of the breakdown electric field resulting from alternate fabrication techniques, the effect of gas pressure, the effect of the insulator-to-electrode interface gap spacing, and the performance of the insulator structure under bi-polar stress

Field Performance of Photovoltaic Systems in the Tucson Desert

Science.gov (United States)

Orsburn, Sean; Brooks, Adria; Cormode, Daniel; Greenberg, James; Hardesty, Garrett; Lonij, Vincent; Salhab, Anas; St. Germaine, Tyler; Torres, Gabe; Cronin, Alexander

2011-10-01

At the Tucson Electric Power (TEP) solar test yard, over 20 different grid-connected photovoltaic (PV) systems are being tested. The goal at the TEP solar test yard is to measure and model real-world performance of PV systems and to benchmark new technologies such as holographic concentrators. By studying voltage and current produced by the PV systems as a function of incident irradiance, and module temperature, we can compare our measurements of field-performance (in a harsh desert environment) to manufacturer specifications (determined under laboratory conditions). In order to measure high-voltage and high-current signals, we designed and built reliable, accurate sensors that can handle extreme desert temperatures. We will present several benchmarks of sensors in a controlled environment, including shunt resistors and Hall-effect current sensors, to determine temperature drift and accuracy. Finally we will present preliminary field measurements of PV performance for several different PV technologies.

High resolution studies of the effects of magnetic fields on chemical reactions

OpenAIRE

Hamilton, C. A.; Hewitt, J. P.; McLauchlan, Keith A.; Steiner, Ulrich

1988-01-01

A simple and inexpensive experiment is described which detects magnetic field effects on chemical reactions with high signal-to-noise ratio and high resolution. It consists in applying a small modulation field to the sample, whilst the main field it experiences is varied, with optical detection at the modulation frequency. It consequently measures the derivative of the normal MARY spectrum. It is shown by theoretical analysis that when using this method it is better to monitor reaction interm...

ADX: a high field, high power density, Advanced Divertor test eXperiment

Science.gov (United States)

Vieira, R.; Labombard, B.; Marmar, E.; Irby, J.; Shiraiwa, S.; Terry, J.; Wallace, G.; Whyte, D. G.; Wolfe, S.; Wukitch, S.; ADX Team

2014-10-01

The MIT PSFC and collaborators are proposing an advanced divertor experiment (ADX) - a tokamak specifically designed to address critical gaps in the world fusion research program on the pathway to FNSF/DEMO. This high field (6.5 tesla, 1.5 MA), high power density (P/S ~ 1.5 MW/m2) facility would utilize Alcator magnet technology to test innovative divertor concepts for next-step DT fusion devices (FNSF, DEMO) at reactor-level boundary plasma pressures and parallel heat flux densities while producing high performance core plasma conditions. The experimental platform would also test advanced lower hybrid current drive (LHCD) and ion-cyclotron range of frequency (ICRF) actuators and wave physics at the plasma densities and magnetic field strengths of a DEMO, with the unique ability to deploy launcher structures both on the low-magnetic-field side and the high-field side - a location where energetic plasma-material interactions can be controlled and wave physics is most favorable for efficient current drive, heating and flow drive. This innovative experiment would perform plasma science and technology R&D necessary to inform the conceptual development and accelerate the readiness-for-deployment of FNSF/DEMO - in a timely manner, on a cost-effective research platform. Supported by DE-FC02-99ER54512.

High-Performance Nonvolatile Organic Field-Effect Transistor Memory Based on Organic Semiconductor Heterostructures of Pentacene/P13/Pentacene as Both Charge Transport and Trapping Layers.

Science.gov (United States)

Li, Wen; Guo, Fengning; Ling, Haifeng; Zhang, Peng; Yi, Mingdong; Wang, Laiyuan; Wu, Dequn; Xie, Linghai; Huang, Wei

2017-08-01

Nonvolatile organic field-effect transistor (OFET) memory devices based on pentacene/ N , N '-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13)/pentacene trilayer organic heterostructures have been proposed. The discontinuous n-type P13 embedded in p-type pentacene layers can not only provide electrons in the semiconductor layer that facilitates electron trapping process; it also works as charge trapping sites, which is attributed to the quantum well-like pentacene/P13/pentacene organic heterostructures. The synergistic effects of charge trapping in the discontinuous P13 and the charge-trapping property of the poly(4-vinylphenol) (PVP) layer remarkably improve the memory performance. In addition, the trilayer organic heterostructures have also been successfully applied to multilevel and flexible nonvolatile memory devices. The results provide a novel design strategy to achieve high-performance nonvolatile OFET memory devices and allow potential applications for different combinations of various organic semiconductor materials in OFET memory.

Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors.

Science.gov (United States)

Song, Li; Hu, Yongsheng; Liu, Zheqin; Lv, Ying; Guo, Xiaoyang; Liu, Xingyuan

2017-01-25

The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

Use of high performance computing to examine the effectiveness of aquifer remediation

International Nuclear Information System (INIS)

Tompson, A.F.B.; Ashby, S.F.; Falgout, R.D.; Smith, S.G.; Fogwell, T.W.; Loosmore, G.A.

1994-06-01

Large-scale simulation of fluid flow and chemical migration is being used to study the effectiveness of pump-and-treat restoration of a contaminated, saturated aquifer. A three-element approach focusing on geostatistical representations of heterogeneous aquifers, high-performance computing strategies for simulating flow, migration, and reaction processes in large three-dimensional systems, and highly-resolved simulations of flow and chemical migration in porous formations will be discussed. Results from a preliminary application of this approach to examine pumping behavior at a real, heterogeneous field site will be presented. Future activities will emphasize parallel computations in larger, dynamic, and nonlinear (two-phase) flow problems as well as improved interpretive methods for defining detailed material property distributions

Chalcogenophene comonomer comparison in small band gap diketopyrrolopyrrole-based conjugated polymers for high-performing field-effect transistors and organic solar cells

KAUST Repository

Ashraf, Raja Shahid

2015-01-28

The design, synthesis, and characterization of a series of diketopyrrolopyrrole-based copolymers with different chalcogenophene comonomers (thiophene, selenophene, and tellurophene) for use in field-effect transistors and organic photovoltaic devices are reported. The effect of the heteroatom substitution on the optical, electrochemical, and photovoltaic properties and charge carrier mobilities of these polymers is discussed. The results indicate that by increasing the size of the chalcogen atom (S < Se < Te), polymer band gaps are narrowed mainly due to LUMO energy level stabilization. In addition, the larger heteroatomic size also increases intermolecular heteroatom-heteroatom interactions facilitating the formation of polymer aggregates leading to enhanced field-effect mobilities of 1.6 cm2/(V s). Bulk heterojunction solar cells based on the chalcogenophene polymer series blended with fullerene derivatives show good photovoltaic properties, with power conversion efficiencies ranging from 7.1-8.8%. A high photoresponse in the near-infrared (NIR) region with excellent photocurrents above 20 mA cm-2 was achieved for all polymers, making these highly efficient low band gap polymers promising candidates for use in tandem solar cells. (Graph Presented).

Effects of high-gradient magnetic fields on living cell machinery

International Nuclear Information System (INIS)

Zablotskii, V; Lunov, O; Kubinova, S; Polyakova, T; Dejneka, A; Sykova, E

2016-01-01

A general interest in biomagnetic effects is related to fundamental studies of the influence of magnetic fields on living objects on the cellular and whole organism levels. Emerging technologies offer new directions for the use of high-gradient magnetic fields to control cell machinery and to understand the intracellular biological processes of the emerging field of nanomedicine. In this review we aim at highlighting recent advances made in identifying fundamental mechanisms by which magnetic gradient forces act on cell fate specification and cell differentiation. The review also provides an analysis of the currently available magnetic systems capable of generating magnetic fields with spatial gradients of up to 10 MT m −1 , with the focus on their suitability for use in cell therapy. Relationships between experimental factors and underlying biophysical mechanisms and assumptions that would ultimately lead to a deeper understanding of cell machinery and the development of more predictive models for the evaluation of the effects of magnetic fields on cells, tissue and organisms are comprehensively discussed. (topical review)

A high-performance complementary inverter based on transition metal dichalcogenide field-effect transistors.

Science.gov (United States)

Cho, Ah-Jin; Park, Kee Chan; Kwon, Jang-Yeon

2015-01-01

For several years, graphene has been the focus of much attention due to its peculiar characteristics, and it is now considered to be a representative 2-dimensional (2D) material. Even though many research groups have studied on the graphene, its intrinsic nature of a zero band-gap, limits its use in practical applications, particularly in logic circuits. Recently, transition metal dichalcogenides (TMDs), which are another type of 2D material, have drawn attention due to the advantage of having a sizable band-gap and a high mobility. Here, we report on the design of a complementary inverter, one of the most basic logic elements, which is based on a MoS2 n-type transistor and a WSe2 p-type transistor. The advantages provided by the complementary metal-oxide-semiconductor (CMOS) configuration and the high-performance TMD channels allow us to fabricate a TMD complementary inverter that has a high-gain of 13.7. This work demonstrates the operation of the MoS2 n-FET and WSe2 p-FET on the same substrate, and the electrical performance of the CMOS inverter, which is based on a different driving current, is also measured.

Effect of Cognitive Demand on Functional Visual Field Performance in Senior Drivers with Glaucoma

Directory of Open Access Journals (Sweden)

Viswa Gangeddula

2017-08-01

Full Text Available Purpose: To investigate the effect of cognitive demand on functional visual field performance in drivers with glaucoma.Method: This study included 20 drivers with open-angle glaucoma and 13 age- and sex-matched controls. Visual field performance was evaluated under different degrees of cognitive demand: a static visual field condition (C1, dynamic visual field condition (C2, and dynamic visual field condition with active driving (C3 using an interactive, desktop driving simulator. The number of correct responses (accuracy and response times on the visual field task were compared between groups and between conditions using Kruskal–Wallis tests. General linear models were employed to compare cognitive workload, recorded in real-time through pupillometry, between groups and conditions.Results: Adding cognitive demand (C2 and C3 to the static visual field test (C1 adversely affected accuracy and response times, in both groups (p < 0.05. However, drivers with glaucoma performed worse than did control drivers when the static condition changed to a dynamic condition [C2 vs. C1 accuracy; glaucoma: median difference (Q1–Q3 3 (2–6.50 vs. controls: 2 (0.50–2.50; p = 0.05] and to a dynamic condition with active driving [C3 vs. C1 accuracy; glaucoma: 2 (2–6 vs. controls: 1 (0.50–2; p = 0.02]. Overall, drivers with glaucoma exhibited greater cognitive workload than controls (p = 0.02.Conclusion: Cognitive demand disproportionately affects functional visual field performance in drivers with glaucoma. Our results may inform the development of a performance-based visual field test for drivers with glaucoma.

High-performance magnetic field sensor based on superconducting quantum interference filters

Science.gov (United States)

Caputo, P.; Oppenländer, J.; Häussler, Ch.; Tomes, J.; Friesch, A.; Träuble, T.; Schopohl, N.

2004-08-01

We have developed an absolute magnetic field sensor using a superconducting quantum interference filter (SQIF) made of high-Tc grain-boundary Josephson junctions. The device shows the typical magnetic-field-dependent voltage response V(B ), which is a sharp deltalike dip in the vicinity of zero-magnetic field. When the SQIF is cooled with magnetic shield, and then the shield is removed, the presence of the ambient magnetic field induces a shift of the dip position from B0≈0 to a value B ≈B1, which is about the average value of the Earth's magnetic field, at our latitude. When the SQIF is cooled in the ambient field without shielding, the dip is first found at B ≈B1, and the further shielding of the SQIF results in a shift of the dip towards B0≈0. The low hysteresis observed in the sequence of experiments (less than 5% of B1) makes SQIFs suitable for high precision measurements of the absolute magnetic field. The experimental results are discussed in view of potential applications of high-Tc SQIFs in magnetometry.

Performance of high-rate gravel-packed oil wells

Energy Technology Data Exchange (ETDEWEB)

Unneland, Trond

2001-05-01

Improved methods for the prediction, evaluation, and monitoring of performance in high-rate cased-hole gravel-packed oil wells are presented in this thesis. The ability to predict well performance prior to the gravel-pack operations, evaluate the results after the operation, and monitor well performance over time has been improved. This lifetime approach to performance analysis of gravel-packed oil wells contributes to increase oil production and field profitability. First, analytical models available for prediction of performance in gravel-packed oil wells are reviewed, with particular emphasis on high-velocity flow effects. From the analysis of field data from three North Sea oil fields, improved and calibrated cased-hole gravel-pack performance prediction models are presented. The recommended model is based on serial flow through formation sand and gravel in the perforation tunnels. In addition, new correlations for high-velocity flow in high-rate gravel-packed oil wells are introduced. Combined, this improves the performance prediction for gravel-packed oil wells, and specific areas can be targeted for optimized well design. Next, limitations in the current methods and alternative methods for evaluation and comparison of well performance are presented. The most widely used parameter, the skin factor, remains a convenient and important parameter. However, using the skin concept in direct comparisons between wells with different reservoir properties may result in misleading or even invalid conclusions. A discussion of the parameters affecting the skin value, with a clarification of limitations, is included. A methodology for evaluation and comparison of gravel-packed well performance is presented, and this includes the use of results from production logs and the use of effective perforation tunnel permeability as a parameter. This contributes to optimized operational procedures from well to well and from field to field. Finally, the data sources available for

Impact of device engineering on analog/RF performances of tunnel field effect transistors

Science.gov (United States)

Vijayvargiya, V.; Reniwal, B. S.; Singh, P.; Vishvakarma, S. K.

2017-06-01

The tunnel field effect transistor (TFET) and its analog/RF performance is being aggressively studied at device architecture level for low power SoC design. Therefore, in this paper we have investigated the influence of the gate-drain underlap (UL) and different dielectric materials for the spacer and gate oxide on DG-TFET (double gate TFET) and its analog/RF performance for low power applications. Here, it is found that the drive current behavior in DG-TFET with a UL feature while implementing dielectric material for the spacer is different in comparison to that of DG-FET. Further, hetero gate dielectric-based DG-TFET (HGDG-TFET) is more resistive against drain-induced barrier lowering (DIBL) as compared to DG-TFET with high-k (HK) gate dielectric. Along with that, as compared to DG-FET, this paper also analyses the attributes of UL and dielectric material on analog/RF performance of DG-TFET in terms of transconductance (gm ), transconductance generation factor (TGF), capacitance, intrinsic resistance (Rdcr), cut-off frequency (F T), and maximum oscillation frequency (F max). The LK spacer-based HGDG-TFET with a gate-drain UL has the potential to improve the RF performance of device.

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L.; Burke, Robert A.; Dubey, Madan, E-mail: madan.dubey.civ@mail.mil [Sensors and Electron Devices Directorate, US Army Research Laboratory, Adelphi, Maryland 20723 (United States); Najmaei, Sina; Ajayan, Pulickel M.; Lou, Jun [Department of Materials Science and Nanoengineering, Rice University, Houston, Texas 77005 (United States)

2014-05-19

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combination of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.

Wide-field high-performance geosynchronous imaging

International Nuclear Information System (INIS)

Wood, H. John; Jenstrom, Del; Wilson, Mark; Hinkal, Sanford; Kirchman, Frank

1998-01-01

coverage requirements, drives the telescope design to a 1.6 degree square FOV to provide full Earth disk coverage in less than 12 swaths. The telescope design to accommodate the FOV and image quality requirements is a 30 cm aperture three-element off-axis anastigmat. The size and mass of the imager instrument that result from this optical configuration are larger than desired. But spacecraft reaction wheel torque and power requirements to raster the imager FOV are achievable using existing spacecraft technology. However, launch mass and cost are higher than desired. In the second high-level trade study, the AGS imager team is looking at incorporating a scan mirror and having the satellite three-axis stabilized. The use of the scan mirror eliminates the long turn-around times of the spacecraft scanning approach, allowing for faster Earth coverage. Thus the field of view of the afocal telescope can be reduced by half while still satisfying ground coverage requirements. The optical design of the reduced field afocal telescope is being studied to shrink its size and improve its performance. Both a three-mirror Cassegrain afocal and a two-mirror pair of confocal paraboloids are being considered. With either telescope, the size, mass, and power requirements of this imager are significantly less than those of the first imager design. Both imager designs appear to be feasible and both meet envisioned MTPE and NOAA geosynchronous imaging needs. The AGS imager team is continuing to explore the optical trade space to further optimize imager designs

Highly Uniform Carbon Nanotube Field-Effect Transistors and Medium Scale Integrated Circuits.

Science.gov (United States)

Chen, Bingyan; Zhang, Panpan; Ding, Li; Han, Jie; Qiu, Song; Li, Qingwen; Zhang, Zhiyong; Peng, Lian-Mao

2016-08-10

Top-gated p-type field-effect transistors (FETs) have been fabricated in batch based on carbon nanotube (CNT) network thin films prepared from CNT solution and present high yield and highly uniform performance with small threshold voltage distribution with standard deviation of 34 mV. According to the property of FETs, various logical and arithmetical gates, shifters, and d-latch circuits were designed and demonstrated with rail-to-rail output. In particular, a 4-bit adder consisting of 140 p-type CNT FETs was demonstrated with higher packing density and lower supply voltage than other published integrated circuits based on CNT films, which indicates that CNT based integrated circuits can reach to medium scale. In addition, a 2-bit multiplier has been realized for the first time. Benefitted from the high uniformity and suitable threshold voltage of CNT FETs, all of the fabricated circuits based on CNT FETs can be driven by a single voltage as small as 2 V.

Testing of Performance of Optical Fibers Under Irradiation in Intense Radiation Fields, When Subjected to High Temperature

International Nuclear Information System (INIS)

Blue, Thomas; Windl, Wolfgang; Dickerson, Bryan

2013-01-01

The primary objective of this project is to measure and model the performance of optical fibers in intense radiation fields when subjected to very high temperatures. This research will pave the way for fiber optic and optically based sensors under conditions expected in future high-temperature gas-cooled reactors. Sensor life and signal-to-noise ratios are susceptible to attenuation of the light signal due to scattering and absorbance in the fibers. This project will provide an experimental and theoretical study of the darkening of optical fibers in high-radiation and high-temperature environments. Although optical fibers have been studied for moderate radiation fluence and flux levels, the results of irradiation at very high temperatures have not been published for extended in-core exposures. Several previous multi-scale modeling efforts have studied irradiation effects on the mechanical properties of materials. However, model-based prediction of irradiation-induced changes in silica'@@s optical transport properties has only recently started to receive attention due to possible applications as optical transmission components in fusion reactors. Nearly all damage-modeling studies have been performed in the molecular-dynamics domain, limited to very short times and small systems. Extended-time modeling, however, is crucial to predicting the long-term effects of irradiation at high temperatures, since the experimental testing may not encompass the displacement rate that the fibers will encounter if they are deployed in the VHTR. The project team will pursue such extended-time modeling, including the effects of the ambient and recrystallization. The process will be based on kinetic MC modeling using the concept of amorphous material consisting of building blocks of defect-pairs or clusters, which has been successfully applied to kinetic modeling in amorphized and recrystallized silicon. Using this procedure, the team will model compensation for rate effects, and

Short-channel field-effect transistors with 9-atom and 13-atom wide graphene nanoribbons.

Science.gov (United States)

Llinas, Juan Pablo; Fairbrother, Andrew; Borin Barin, Gabriela; Shi, Wu; Lee, Kyunghoon; Wu, Shuang; Yong Choi, Byung; Braganza, Rohit; Lear, Jordan; Kau, Nicholas; Choi, Wonwoo; Chen, Chen; Pedramrazi, Zahra; Dumslaff, Tim; Narita, Akimitsu; Feng, Xinliang; Müllen, Klaus; Fischer, Felix; Zettl, Alex; Ruffieux, Pascal; Yablonovitch, Eli; Crommie, Michael; Fasel, Roman; Bokor, Jeffrey

2017-09-21

Bottom-up synthesized graphene nanoribbons and graphene nanoribbon heterostructures have promising electronic properties for high-performance field-effect transistors and ultra-low power devices such as tunneling field-effect transistors. However, the short length and wide band gap of these graphene nanoribbons have prevented the fabrication of devices with the desired performance and switching behavior. Here, by fabricating short channel (L ch  ~ 20 nm) devices with a thin, high-κ gate dielectric and a 9-atom wide (0.95 nm) armchair graphene nanoribbon as the channel material, we demonstrate field-effect transistors with high on-current (I on  > 1 μA at V d  = -1 V) and high I on /I off  ~ 10 5 at room temperature. We find that the performance of these devices is limited by tunneling through the Schottky barrier at the contacts and we observe an increase in the transparency of the barrier by increasing the gate field near the contacts. Our results thus demonstrate successful fabrication of high-performance short-channel field-effect transistors with bottom-up synthesized armchair graphene nanoribbons.Graphene nanoribbons show promise for high-performance field-effect transistors, however they often suffer from short lengths and wide band gaps. Here, the authors use a bottom-up synthesis approach to fabricate 9- and 13-atom wide ribbons, enabling short-channel transistors with 10 5 on-off current ratio.

Enhanced performance of C60 N-type organic field-effect transistors using a pentacene passivation layer

International Nuclear Information System (INIS)

Liang Xiaoyu; Cheng Xiaoman; Du Boqun; Bai Xiao; Fan Jianfeng

2013-01-01

We investigated the properties of C 60 -based organic field-effect transistors (OFETs) with a pentacene passivation layer inserted between the C 60 active layer and the gate dielectric. After modification of the pentacene passivation layer, the performance of the devices was considerably improved compared to C 60 -based OFETs with only a PMMA dielectric. The peak field-effect mobility was up to 1.01 cm 2 /(V·s) and the on/off ratio shifted to 10 4 . This result indicates that using a pentacene passivation layer is an effective way to improve the performance of N-type OFETs. (semiconductor devices)

High-field paramagnetic Meissner effect up to 14 T in melt-textured YBa_2Cu_3O_7_–_δ

International Nuclear Information System (INIS)

Dias, F.T.; Vieira, V.N.; Wolff-Fabris, F.; Kampert, E.; Gouvêa, C.P.; Campos, A.P.C.; Archanjo, B.S.; Schaf, J.; Obradors, X.; Puig, T.; Roa, J.J.; Sahoo, B.K.

2016-01-01

Highlights: • A persistent paramagnetic Meissner effect up to 14 T. • The PME with a slight tendency to saturate in high magnetic fields. • Strong time effects causing a paramagnetic relaxation dependent on the cooling rate. - Abstract: We have performed magnetization experiments in a melt-textured YBa_2Cu_3O_7_-_δ (Y123) sample with Y_2BaCuO_5 (Y211) inclusions, under magnetic fields up to 14 T applied parallel or perpendicular to the ab plane. Magnetic anisotropy and paramagnetic moments were observed in both FC (field-cooling) and FCW (field-cooled warming) procedures and these features correspond to the so-called High-Field Paramagnetic Meissner Effect (HFPME). The HFPME effect increases monotonically as the magnetic field rises and a strong paramagnetic relaxation, toward increasing paramagnetic moment was additionally observed as a function of time. Microscopy analysis revealed a complex and correlated microstructure of the Y211 particles. These correlated defects are well known to cause strong flux pinning. Our results suggest a scenario of strong flux compression within weak or non-superconducting regions of the samples, developed as a consequence of the Meissner effect and assisted by strong flux pinning by the Y211 particles. This scenario is observed up to 14 T and clearly persists beyond.

Performance of high power S-band klystrons focused with permanent magnet

International Nuclear Information System (INIS)

Fukuda, S.; Shidara, T.; Saito, Y.; Hanaki, H.; Nakao, K.; Homma, H.; Anami, S.; Tanaka, J.

1987-02-01

Performance of high power S-band klystrons focused with permanent magnet is presented. The axial magnetic field distribution and the transverse magnetic field play an important role in the tube performance. Effects of the reversal field in the collector and the cathode-anode region are discussed precisely. It is also shown that the tube efficiency is strongly affected with the residual transverse magnetic field. The allowable transverse field is less than 0.3 % of the longitudinal field in the entire rf interaction region of the klystron. (author)

Performance of high power S-band klystrons focused with permanent magnet

Science.gov (United States)

Fukuda, S.; Shidara, T.; Saito, Y.; Hanaki, H.; Nakao, K.; Homma, H.; Anami, S.; Tanaka, J.

1987-02-01

Performance of high power S-band klystrons focused with permanent magnet is presented. The axial magnetic field distribution and the transverse magnetic field play an important role in the tube performance. Effects of the reversal field in the collector and the cathode-anode region are discussed precisely. It is also shown that the tube efficiency is strongly affected with the residual transverse magnetic field. The allowable transverse field is less than 0.3 percent of the longitudinal field in the entire RF interaction region of the klystron.

High temperature study of flexible silicon-on-insulator fin field-effect transistors

KAUST Repository

Diab, Amer El Hajj

2014-09-29

We report high temperature electrical transport characteristics of a flexible version of the semiconductor industry\\'s most advanced architecture: fin field-effect transistor on silicon-on-insulator with sub-20 nm fins and high-κ/metal gate stacks. Characterization from room to high temperature (150 °C) was completed to determine temperature dependence of drain current (Ids), gate leakage current (Igs), transconductance (gm), and extracted low-field mobility (μ0). Mobility degradation with temperature is mainly caused by phonon scattering. The other device characteristics show insignificant difference at high temperature which proves the suitability of inorganic flexible electronics with advanced device architecture.

Individual monitoring in high-energy stray radiation fields

International Nuclear Information System (INIS)

Hoefert, M.; Stevenson, G.R.

1995-01-01

Due to the lack of passive or active devices that could be considered as personal dosemeters in high-energy stray fields one can at present only perform individual monitoring around high energy accelerators. Of all detectors currently available it is shown that the NTA film is the most suitable method for individually monitoring the neutron exposure of more than 3000 persons regularly, reliably, and cost effectively like at CERN. (author)

High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

KAUST Repository

Nikolka, Mark; Nasrallah, Iyad; Rose, Bradley Daniel; Ravva, Mahesh Kumar; Broch, Katharina; Sadhanala, Aditya; Harkin, David; Charmet, Jerome; Hurhangee, Michael; Brown, Adam; Illig, Steffen; Too, Patrick; Jongman, Jan; McCulloch, Iain; Bredas, Jean-Luc; Sirringhaus, Henning

2016-01-01

Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

High operational and environmental stability of high-mobility conjugated polymer field-effect transistors through the use of molecular additives

KAUST Repository

Nikolka, Mark

2016-12-12

Due to their low-temperature processing properties and inherent mechanical flexibility, conjugated polymer field-effect transistors (FETs) are promising candidates for enabling flexible electronic circuits and displays. Much progress has been made on materials performance; however, there remain significant concerns about operational and environmental stability, particularly in the context of applications that require a very high level of threshold voltage stability, such as active-matrix addressing of organic light-emitting diode displays. Here, we investigate the physical mechanisms behind operational and environmental degradation of high-mobility, p-type polymer FETs and demonstrate an effective route to improve device stability. We show that water incorporated in nanometre-sized voids within the polymer microstructure is the key factor in charge trapping and device degradation. By inserting molecular additives that displace water from these voids, it is possible to increase the stability as well as uniformity to a high level sufficient for demanding industrial applications.

Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

KAUST Repository

Kanimozhi, Catherine K.

2012-10-10

In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a copolymer with exceptional properties such as extended absorption characteristics (up to ∼1100 nm) and field-effect electron mobility values of >1 cm 2 V -1 s -1. The synthesis of this novel DPP-DPP copolymer in combination with the demonstration of transistors with extremely high electron mobility makes this work an important step toward a new family of DPP-DPP copolymers for application in the general area of organic optoelectronics. © 2012 American Chemical Society.

Scattering effects on the performance of carbon nanotube field effect transistor in a compact model

Science.gov (United States)

Hamieh, S. D.; Desgreys, P.; Naviner, J. F.

2010-01-01

Carbon nanotube field-effect transistors (CNTFET) are being extensively studied as possible successors to CMOS. Device simulators have been developed to estimate their performance in sub-10-nm and device structures have been fabricated. In this work, a new compact model of single-walled semiconducting CNTFET is proposed implementing the calculation of energy conduction sub-band minima and the treatment of scattering effects through energy shift in CNTFET. The developed model has been used to simulate I-V characteristics using VHDL-AMS simulator.

Evaluation of performance of metal oxide-silicon semiconductor field effect transistor (MOSFET) dosimeter

International Nuclear Information System (INIS)

Nagashima, Hiroyuki; Sano, Naoki; Nakamura, Osamu

2001-01-01

The JARP level dosimeter is the most suitable for absorbed dose determination in radiotherapy because of its high accuracy. However, in measuring the dose of an extremely small field, a dosimeter with a smaller active region is required. The active region of the MOSFET dosimeter is very small, having a volume of just 0.02 mm 3 . In this study, we evaluated the performance of MOSFET dosimeters with two different sensitivities and examined the usefulness of the MOSFET dosimeter in stereotactic radiosurgery. Using the high-sensitivity MOSFET dosimeter, we were able to reduce the experimental error of absorbed dose (≤±1.8%), and, by correcting the sensitivity, we could use it as a field dosimeter. By turning detectors inside out, we could reduce directional dependence (≤±1.8%). Correction was necessary in the TMR determination because peak depth shifts according to the material of the detector. In the determination of the dose distribution in the penumbra, the resolution of the MOSFET detectors was equal to that of the diamond detector. In the determination of OPF for the extremely small field, better results were obtained with MOSFET than with other small detectors. The high-sensitivity MOSFET dosimeter could properly evaluate the dose of an extremely small field and will be useful in dosimetry of the maximum dose of the field center in stereotactic radiosurgery. (author)

Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors.

Science.gov (United States)

Kim, David K; Lai, Yuming; Diroll, Benjamin T; Murray, Christopher B; Kagan, Cherie R

2012-01-01

Colloidal semiconductor nanocrystals are emerging as a new class of solution-processable materials for low-cost, flexible, thin-film electronics. Although these colloidal inks have been shown to form single, thin-film field-effect transistors with impressive characteristics, the use of multiple high-performance nanocrystal field-effect transistors in large-area integrated circuits has not been shown. This is needed to understand and demonstrate the applicability of these discrete nanocrystal field-effect transistors for advanced electronic technologies. Here we report solution-deposited nanocrystal integrated circuits, showing nanocrystal integrated circuit inverters, amplifiers and ring oscillators, constructed from high-performance, low-voltage, low-hysteresis CdSe nanocrystal field-effect transistors with electron mobilities of up to 22 cm(2) V(-1) s(-1), current modulation >10(6) and subthreshold swing of 0.28 V dec(-1). We fabricated the nanocrystal field-effect transistors and nanocrystal integrated circuits from colloidal inks on flexible plastic substrates and scaled the devices to operate at low voltages. We demonstrate that colloidal nanocrystal field-effect transistors can be used as building blocks to construct complex integrated circuits, promising a viable material for low-cost, flexible, large-area electronics.

High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

Science.gov (United States)

Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

2012-08-01

A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

Near field plasmonic gradient effects on high vacuum tip-enhanced Raman spectroscopy.

Science.gov (United States)

Fang, Yurui; Zhang, Zhenglong; Chen, Li; Sun, Mengtao

2015-01-14

Near field gradient effects in high vacuum tip-enhanced Raman spectroscopy (HV-TERS) are a recent developing ultra-sensitive optical and spectral analysis technology on the nanoscale, based on the plasmons and plasmonic gradient enhancement in the near field and under high vacuum. HV-TERS can not only be used to detect ultra-sensitive Raman spectra enhanced by surface plasmon, but also to detect clear molecular IR-active modes enhanced by strongly plasmonic gradient. Furthermore, the molecular overtone modes and combinational modes can also be experimentally measured, where the Fermi resonance and Darling-Dennison resonance were successfully observed in HV-TERS. Theoretical calculations using electromagnetic field theory firmly supported experimental observation. The intensity ratio of the plasmon gradient term over the linear plasmon term can reach values greater than 1. Theoretical calculations also revealed that with the increase in gap distance between tip and substrate, the decrease in the plasmon gradient was more significant than the decrease in plasmon intensity, which is the reason that the gradient Raman can be only observed in the near field. Recent experimental results of near field gradient effects on HV-TERS were summarized, following the section of the theoretical analysis.

Strain sensors for high field pulse magnets

Energy Technology Data Exchange (ETDEWEB)

Martinez, Christian [Los Alamos National Laboratory; Zheng, Yan [Los Alamos National Laboratory; Easton, Daniel [Los Alamos National Laboratory; Farinholt, Kevin M [Los Alamos National Laboratory; Park, Gyuhae [Los Alamos National Laboratory

2009-01-01

In this paper we present an investigation into several strain sensing technologies that are being considered to monitor mechanical deformation within the steel reinforcement shells used in high field pulsed magnets. Such systems generally operate at cryogenic temperatures to mitigate heating issues that are inherent in the coils of nondestructive, high field pulsed magnets. The objective of this preliminary study is to characterize the performance of various strain sensing technologies at liquid nitrogen temperatures (-196 C). Four sensor types are considered in this investigation: fiber Bragg gratings (FBG), resistive foil strain gauges (RFSG), piezoelectric polymers (PVDF), and piezoceramics (PZT). Three operational conditions are considered for each sensor: bond integrity, sensitivity as a function of temperature, and thermal cycling effects. Several experiments were conducted as part of this study, investigating adhesion with various substrate materials (stainless steel, aluminum, and carbon fiber), sensitivity to static (FBG and RFSG) and dynamic (RFSG, PVDF and PZT) load conditions, and sensor diagnostics using PZT sensors. This work has been conducted in collaboration with the National High Magnetic Field Laboratory (NHMFL), and the results of this study will be used to identify the set of sensing technologies that would be best suited for integration within high field pulsed magnets at the NHMFL facility.

High resolution NMR imaging using a high field yokeless permanent magnet.

Science.gov (United States)

Kose, Katsumi; Haishi, Tomoyuki

2011-01-01

We measured the homogeneity and stability of the magnetic field of a high field (about 1.04 tesla) yokeless permanent magnet with 40-mm gap for high resolution nuclear magnetic resonance (NMR) imaging. Homogeneity was evaluated using a 3-dimensional (3D) lattice phantom and 3D spin-echo imaging sequences. In the central sphere (20-mm diameter), peak-to-peak magnetic field inhomogeneity was about 60 ppm, and the root-mean-square was 8 ppm. We measured room temperature, magnet temperature, and NMR frequency of the magnet simultaneously every minute for about 68 hours with and without the thermal insulator of the magnet. A simple mathematical model described the magnet's thermal property. Based on magnet performance, we performed high resolution (up to [20 µm](2)) imaging with internal NMR lock sequences of several biological samples. Our results demonstrated the usefulness of the high field small yokeless permanent magnet for high resolution NMR imaging.

High resolution NMR imaging using a high field yokeless permanent magnet

International Nuclear Information System (INIS)

Kose, Katsumi; Haishi, Tomoyuki

2011-01-01

We measured the homogeneity and stability of the magnetic field of a high field (about 1.04 tesla) yokeless permanent magnet with 40-mm gap for high resolution nuclear magnetic resonance (NMR) imaging. Homogeneity was evaluated using a 3-dimensional (3D) lattice phantom and 3D spin-echo imaging sequences. In the central sphere (20-mm diameter), peak-to-peak magnetic field inhomogeneity was about 60 ppm, and the root-mean-square was 8 ppm. We measured room temperature, magnet temperature, and NMR frequency of the magnet simultaneously every minute for about 68 hours with and without the thermal insulator of the magnet. A simple mathematical model described the magnet's thermal property. Based on magnet performance, we performed high resolution (up to [20 μm] 2 ) imaging with internal NMR lock sequences of several biological samples. Our results demonstrated the usefulness of the high field small yokeless permanent magnet for high resolution NMR imaging. (author)

A study of effects of electrode contacts on performance of organic-based light-emitting field-effect transistors

Science.gov (United States)

Kim, Dae-Kyu; Choi, Jong-Ho

2018-02-01

Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source-drain contact with long-channel geometry and were produced by sequentially depositing p-type pentacene and n-type N,N‧-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.

A field-sweep/field-lock system for superconducting magnets--Application to high-field EPR.

Science.gov (United States)

Maly, Thorsten; Bryant, Jeff; Ruben, David; Griffin, Robert G

2006-12-01

We describe a field-lock/field-sweep system for the use in superconducting magnets. The system is based on a commercially available field mapping unit and a custom designed broad-band 1H NMR probe. The NMR signal of a small water sample is used in a feedback loop to set and control the magnetic field to high accuracy. The current instrumental configuration allows field sweeps of +/-0.4 T and a resolution of up to 10(-5) T (0.1 G) and the performance of the system is demonstrated in a high-field electron paramagnetic resonance (EPR) application. The system should also be of utility in other experiments requiring precise and reproducible sweeps of the magnetic field such as DNP, ENDOR or PELDOR.

A Field-Sweep/Field-Lock System for Superconducting Magnets-Application to High-Field EPR

Science.gov (United States)

Maly, Thorsten; Bryant, Jeff; Ruben, David; Griffin, Robert G.

2007-01-01

We describe a field-lock/field-sweep system for the use in superconducting magnets. The system is based on a commercially available field mapping unit and a custom designed broad-band 1H-NMR probe. The NMR signal of a small water sample is used in a feedback loop to set and control the magnetic field to high accuracy. The current instrumental configuration allows field sweeps of ± 0.4 T and a resolution of up to 10-5 T (0.1 G) and the performance of the system is demonstrated in a high-field electron paramagnetic resonance (EPR) application. The system should also be of utility in other experiments requiring precise and reproducible sweeps of the magnetic field such as DNP, ENDOR or PELDOR. PMID:17027306

Testing of Performance of Optical Fibers Under Irradiation in Intense Radiation Fields, When Subjected to Very High Temperatures

Energy Technology Data Exchange (ETDEWEB)

Blue, Thomas [The Ohio State Univ., Columbus, OH (United States); Windl, Wolfgang [The Ohio State Univ., Columbus, OH (United States); Dickerson, Bryan [Luna Innovations, Inc. (United States)

2013-01-03

The primary objective of this project is to measure and model the performance of optical fibers in intense radiation fields when subjected to very high temperatures. This research will pave the way for fiber optic and optically based sensors under conditions expected in future high-temperature gas-cooled reactors. Sensor life and signal-to-noise ratios are susceptible to attenuation of the light signal due to scattering and absorbance in the fibers. This project will provide an experimental and theoretical study of the darkening of optical fibers in high-radiation and high-temperature environments. Although optical fibers have been studied for moderate radiation fluence and flux levels, the results of irradiation at very high temperatures have not been published for extended in-core exposures. Several previous multi-scale modeling efforts have studied irradiation effects on the mechanical properties of materials. However, model-based prediction of irradiation-induced changes in silica's optical transport properties has only recently started to receive attention due to possible applications as optical transmission components in fusion reactors. Nearly all damage-modeling studies have been performed in the molecular-dynamics domain, limited to very short times and small systems. Extended-time modeling, however, is crucial to predicting the long-term effects of irradiation at high temperatures, since the experimental testing may not encompass the displacement rate that the fibers will encounter if they are deployed in the VHTR. The project team will pursue such extended-time modeling, including the effects of the ambient and recrystallization. The process will be based on kinetic MC modeling using the concept of amorphous material consisting of building blocks of defect-pairs or clusters, which has been successfully applied to kinetic modeling in amorphized and recrystallized silicon. Using this procedure, the team will model compensation for rate effects, and

Improved performance and stability of field-effect transistors with polymeric residue-free graphene channel transferred by gold layer.

Science.gov (United States)

Jang, Mi; Trung, Tran Quang; Jung, Jin-Heak; Kim, Bo-Yeong; Lee, Nae-Eung

2014-03-07

One of the most significant issues that occurs when applying chemical-vapor deposited (CVD) graphene (Gr) to various high-performance device applications is the result of polymeric residues. Polymeric residues remain on the Gr surface during Gr polymer support transfer to an arbitrary substrate, and these residues degrade CVD Gr electrical properties. In this paper, we propose that a thin layer of gold be used as a CVD Gr transfer layer, instead of a polymer support layer, to enable a polymer residue-free transfer. Comparative investigation of the surface morphological and qualitative analysis of residues on Gr surfaces and Gr field-effect transistors (GFETs) using two transfer methods demonstrates that gold-transferred Gr, with uniform, smooth, and clean surfaces, enable GFETs to perform better than Gr transferred by the polymer, polymethylmethacrylate (PMMA). In GFETs fabricated by the gold transfer method, field-effect carrier mobility was greatly enhanced and the position of the Dirac point was significantly reduced compared to GFETs fabricated by the PMMA transfer method. In addition, compared to the PMMA-transferred GFETs, the gold-transferred GFETs showed greatly increased stability with smaller hysteresis and higher resistance to gate bias stress effects. These results suggest that the gold transfer method for Gr provides significant improvements in GFET performance and reliability by minimizing the polymeric residues and defects on Gr.

All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

Directory of Open Access Journals (Sweden)

Useong Kim

2015-03-01

Full Text Available We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement.

Novel Electrochemical Phenomena in Magnetic Fields(Research in High Magnetic Fields)

OpenAIRE

Mogi, Iwao; Kamiko, Masao

1996-01-01

Recent two topics are given of electrochemical studies in steady magnetic fields at the High Field Laboratory of Tohoku University. One is the magnetic-field-induced diffusion-limited-aggregation in the pattern formation of silver electrodeposits . The other is the magnetic field effect on the learning effect in a dopant-exchange process of an organic conducting polymer polypyrrole.

Large field-of-view transmission line resonator for high field MRI

DEFF Research Database (Denmark)

Zhurbenko, Vitaliy; Johannesson, Kristjan Sundgaard; Boer, Vincent

2016-01-01

Transmission line resonators is often a preferable choice for coils in high field magnetic resonance imaging (MRI), because they provide a number of advantages over traditional loop coils. The size of such resonators, however, is limited to shorter than half a wavelength due to high standing wave....... Achieved magnetic field distribution is compared to the conventional transmission line resonator. Imaging experiments are performed using 7 Tesla MRI system. The developed resonator is useful for building coils with large field-of-view....

Site-specific nucleation and controlled growth of a vertical tellurium nanowire array for high performance field emitters

International Nuclear Information System (INIS)

Safdar, Muhammad; Zhan Xueying; Mirza, Misbah; Wang Zhenxing; Sun Lianfeng; He Jun; Niu Mutong; Zhang Jinping; Zhao Qing

2013-01-01

We report the controlled growth of highly ordered and well aligned one-dimensional tellurium nanostructure arrays via a one-step catalyst-free physical vapor deposition method. The density, size and fine structures of tellurium nanowires are systematically studied and optimized. Field emission measurement was performed to display notable dependence on nanostructure morphologies. The ordered nanowire array based field emitter has a turn-on field as low as 3.27 V μm −1 and a higher field enhancement factor of 3270. Our finding offers the possibility of controlling the growth of tellurium nanowire arrays and opens up new means for their potential applications in electronic devices and displays. (paper)

Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

Science.gov (United States)

Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

2018-02-01

Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

Auger generation as an intrinsic limit to tunneling field-effect transistor performance

International Nuclear Information System (INIS)

Teherani, James T.; Agarwal, Sapan; Chern, Winston; Antoniadis, Dimitri A.; Solomon, Paul M.; Yablonovitch, Eli

2016-01-01

Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.

Auger generation as an intrinsic limit to tunneling field-effect transistor performance

Energy Technology Data Exchange (ETDEWEB)

Teherani, James T., E-mail: j.teherani@columbia.edu [Department of Electrical Engineering, Columbia University, New York, New York 10027 (United States); Agarwal, Sapan [Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States); Chern, Winston; Antoniadis, Dimitri A. [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Solomon, Paul M. [IBM T.J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Yablonovitch, Eli [Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)

2016-08-28

Many in the microelectronics field view tunneling field-effect transistors (TFETs) as society's best hope for achieving a >10× power reduction for electronic devices; however, despite a decade of considerable worldwide research, experimental TFET results have significantly underperformed simulations and conventional MOSFETs. To explain the discrepancy between TFET experiments and simulations, we investigate the parasitic leakage current due to Auger generation, an intrinsic mechanism that cannot be mitigated with improved material quality or better device processing. We expose the intrinsic link between the Auger and band-to-band tunneling rates, highlighting the difficulty of increasing one without the other. From this link, we show that Auger generation imposes a fundamental limit on ultimate TFET performance.

Ambipolar phosphorene field effect transistor.

Science.gov (United States)

Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas

2014-11-25

In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs.

A high-performance channel engineered charge-plasma-based MOSFET with high-κ spacer

Science.gov (United States)

Shan, Chan; Wang, Ying; Luo, Xin; Bao, Meng-tian; Yu, Cheng-hao; Cao, Fei

2017-12-01

In this paper, the performance of graded channel double-gate MOSFET (GC-DGFET) that utilizes the charge-plasma concept and a high-κ spacer is investigated through 2-D device simulations. The results demonstrate that GC-DGFET with high-κ spacer can effectively improve the ON-state driving current (ION) and reduce the OFF-leakage current (IOFF). We find that reduction of the initial energy barrier between the source and channel is the origin of this ION enhancement. The reason for the IOFF reduction is identified to be the extension of the effective channel length owing to the fringing field via high-κ spacers. Consequently, these devices offer enhanced performance by reducing the total gate-to-gate capacitance (Cgg) and decreasing the intrinsic delay (τ).

Diketopyrrolopyrrole-diketopyrrolopyrrole-based conjugated copolymer for high-mobility organic field-effect transistors

KAUST Repository

Kanimozhi, Catherine K.; Yaacobi-Gross, Nir; Chou, Kang Wei; Amassian, Aram; Anthopoulos, Thomas D.; Patil, Satish P.

2012-01-01

In this communication, we report the synthesis of a novel diketopyrrolopyrrole-diketopyrrolopyrrole (DPP-DPP)-based conjugated copolymer and its application in high-mobility organic field-effect transistors. Copolymerization of DPP with DPP yields a

Performance of Solution Processed Carbon Nanotube Field Effect Transistors with Graphene Electrodes

OpenAIRE

Gangavarapu, P R Yasasvi; Lokesh, Punith Chikkahalli; Bhat, K N; Naik, A K

2016-01-01

This work evaluates the performance of carbon nanotube field effect transistors (CNTFET) using few layer graphene as the contact electrode material. We present the experimental results obtained on the barrier height at CNT graphene junction using temperature dependent IV measurements. The estimated barrier height in our devices for both holes and electrons is close to zero or slightly negative indicating the Ohmic contact of graphene with the valence and conduction bands of CNTs. In addition,...

High-performance computing for airborne applications

International Nuclear Information System (INIS)

Quinn, Heather M.; Manuzatto, Andrea; Fairbanks, Tom; Dallmann, Nicholas; Desgeorges, Rose

2010-01-01

Recently, there has been attempts to move common satellite tasks to unmanned aerial vehicles (UAVs). UAVs are significantly cheaper to buy than satellites and easier to deploy on an as-needed basis. The more benign radiation environment also allows for an aggressive adoption of state-of-the-art commercial computational devices, which increases the amount of data that can be collected. There are a number of commercial computing devices currently available that are well-suited to high-performance computing. These devices range from specialized computational devices, such as field-programmable gate arrays (FPGAs) and digital signal processors (DSPs), to traditional computing platforms, such as microprocessors. Even though the radiation environment is relatively benign, these devices could be susceptible to single-event effects. In this paper, we will present radiation data for high-performance computing devices in a accelerated neutron environment. These devices include a multi-core digital signal processor, two field-programmable gate arrays, and a microprocessor. From these results, we found that all of these devices are suitable for many airplane environments without reliability problems.

Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Jiménez, David; Chaves, Ferney [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, 08193-Bellaterra (Spain); Cummings, Aron W.; Van Tuan, Dinh [ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); Kotakoski, Jani [Faculty of Physics, University of Vienna, Boltzmanngasse 5, 1090 Wien (Austria); Department of Physics, University of Helsinki, P.O. Box 43, 00014 University of Helsinki (Finland); Roche, Stephan [ICN2, Institut Català de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

2014-01-27

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices.

Impact of graphene polycrystallinity on the performance of graphene field-effect transistors

International Nuclear Information System (INIS)

Jiménez, David; Chaves, Ferney; Cummings, Aron W.; Van Tuan, Dinh; Kotakoski, Jani; Roche, Stephan

2014-01-01

We have used a multi-scale physics-based model to predict how the grain size and different grain boundary morphologies of polycrystalline graphene will impact the performance metrics of graphene field-effect transistors. We show that polycrystallinity has a negative impact on the transconductance, which translates to a severe degradation of the maximum and cutoff frequencies. On the other hand, polycrystallinity has a positive impact on current saturation, and a negligible effect on the intrinsic gain. These results reveal the complex role played by graphene grain boundaries and can be used to guide the further development and optimization of graphene-based electronic devices

Techniques for Ultra-high Magnetic Field Gradient NMR Diffusion Measurements

Science.gov (United States)

Sigmund, Eric E.; Mitrovic, Vesna F.; Calder, Edward S.; Will Thomas, G.; Halperin, William P.; Reyes, Arneil P.; Kuhns, Philip L.; Moulton, William G.

2001-03-01

We report on development and application of techniques for ultraslow diffusion coefficient measurements through nuclear magnetic resonance (NMR) in high magnetic field gradients. We have performed NMR experiments in a steady fringe field gradient of 175 T/m from a 23 T resistive Bitter magnet, as well as in a gradient of 42 T/m from an 8 T superconducting magnet. New techniques to provide optimum sensitivity in these experiments are described. To eliminate parasitic effects of the temporal instability of the resistive magnet, we have introduced a passive filter: a highly conductive cryogen-cooled inductive shield. We show experimental demonstration of such a shield’s effect on NMR performed in the Bitter magnet. For enhanced efficiency, we have employed “frequency jumping” in our spectrometer system. Application of these methods has made possible measurements of diffusion coefficients as low as 10-10 cm^2/s, probing motion on a 250 nm length scale.

Advanced measurements and techniques in high magnetic fields

International Nuclear Information System (INIS)

Campbell, L.J.; Rickel, D.G.; Lacerda, A.H.; Kim, Y.

1997-01-01

This is the final report of a one-year, Laboratory-Directed Research and Development (LDRD) project at the Los Alamos National Laboratory (LANL). High magnetic fields present a unique environment for studying the electronic structure of materials. Two classes of materials were chosen for experiments at the national high Magnetic Field Laboratory at Los Alamos: highly correlated electron systems and semiconductors. Magnetotransport and thermodynamic experiments were performed on the renormalized ground states of highly correlated electron systems (such as heavy fermion materials and Kondo insulators) in the presence of magnetic fields that are large enough to disrupt the many-body correlations. A variety of optical measurements in high magnetic fields were performed on semiconductor heterostructures including GaAs/AlGaAs single heterojunctions (HEMT structure), coupled double quantum wells (CDQW), asymmetric coupled double quantum wells (ACDQW), multiple quantum wells and a CdTe single crystal thin film

Performance of the ATLAS Muon Drift-Tube Chambers at High Background Rates and in Magnetic Fields

CERN Document Server

INSPIRE-00213689; Horvat, S.; Legger, F.; Kortner, O.; Kroha, H.; Richter, R.; Valderanis, Ch.; Rauscher, F.; Staude, A.

2016-01-01

The ATLAS muon spectrometer uses drift-tube chambers for precision tracking. The performance of these chambers in the presence of magnetic field and high radiation fluxes is studied in this article using test-beam data recorded in the Gamma Irradiation Facility at CERN. The measurements are compared to detailed predictions provided by the Garfield drift-chamber simulation programme.

The Effects of Assertive Training on Performance in Highly Anxious Adolescents.

Science.gov (United States)

Wehr, Sara H.; Kaufman, Melvin E.

1987-01-01

Investigated the effects of assertive training on measures of assertiveness, state anxiety, and mathematics performance in highly anxious ninth graders (N=96). Found that assertive training resulted in increased assertiveness and decreased state anxiety, with no significant effect on mathematics performance, and no significant effect due to sex.…

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Science.gov (United States)

Cui, Yunkang; Chen, Jing; Di, Yunsong; Zhang, Xiaobing; Lei, Wei

2017-12-01

In this paper, a facile method to fabricate the flexible field emission devices (FEDs) based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD), selected area electron diffraction (SAED) and energy dispersive X-ray spectrometer (EDX), while the morphology was revealed by field emission scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). The results showed that the SiC nanowires grew along the [111] direction with the diameter of ˜110 nm and length of˜30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (˜0.95 V/μm) and threshold field (˜3.26 V/μm), and the high field enhancement factor (β=4670). It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

High performance field emission of silicon carbide nanowires and their applications in flexible field emission displays

Directory of Open Access Journals (Sweden)

Yunkang Cui

2017-12-01

Full Text Available In this paper, a facile method to fabricate the flexible field emission devices (FEDs based on SiC nanostructure emitters by a thermal evaporation method has been demonstrated. The composition characteristics of SiC nanowires was characterized by X-ray diffraction (XRD, selected area electron diffraction (SAED and energy dispersive X-ray spectrometer (EDX, while the morphology was revealed by field emission scanning electron microscopy (SEM and high resolution transmission electron microscopy (HRTEM. The results showed that the SiC nanowires grew along the [111] direction with the diameter of ∼110 nm and length of∼30 μm. The flexible FEDs have been fabricated by transferring and screen-printing the SiC nanowires onto the flexible substrates exhibited excellent field emission properties, such as the low turn-on field (∼0.95 V/μm and threshold field (∼3.26 V/μm, and the high field enhancement factor (β=4670. It is worth noting the current density degradation can be controlled lower than 2% per hour during the stability tests. In addition, the flexible FEDs based on SiC nanowire emitters exhibit uniform bright emission modes under bending test conditions. As a result, this strategy is very useful for its potential application in the commercial flexible FEDs.

Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction.

Science.gov (United States)

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-10-21

High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.

Ion implantation in compound semiconductors for high-performance electronic devices

International Nuclear Information System (INIS)

Zolper, J.C.; Baca, A.G.; Sherwin, M.E.; Klem, J.F.

1996-01-01

Advanced electronic devices based on compound semiconductors often make use of selective area ion implantation doping or isolation. The implantation processing becomes more complex as the device dimensions are reduced and more complex material systems are employed. The authors review several applications of ion implantation to high performance junction field effect transistors (JFETs) and heterostructure field effect transistors (HFETs) that are based on compound semiconductors, including: GaAs, AlGaAs, InGaP, and AlGaSb

Improved performance of InSe field-effect transistors by channel encapsulation

Science.gov (United States)

Liang, Guangda; Wang, Yiming; Han, Lin; Yang, Zai-Xing; Xin, Qian; Kudrynskyi, Zakhar R.; Kovalyuk, Zakhar D.; Patanè, Amalia; Song, Aimin

2018-06-01

Due to the high electron mobility and photo-responsivity, InSe is considered as an excellent candidate for next generation electronics and optoelectronics. In particular, in contrast to many high-mobility two-dimensional (2D) materials, such as phosphorene, InSe is more resilient to oxidation in air. Nevertheless, its implementation in future applications requires encapsulation techniques to prevent the adsorption of gas molecules on its surface. In this work, we use a common lithography resist, poly(methyl methacrylate) (PMMA) to encapsulate InSe-based field-effect transistors (FETs). The encapsulation of InSe by PMMA improves the electrical stability of the FETs under a gate bias stress, and increases both the drain current and electron mobility. These findings indicate the effectiveness of the PMMA encapsulation method, which could be applied to other 2D materials.

High-magnetic field atomic physics

International Nuclear Information System (INIS)

Gay, J.C.

1984-01-01

This chapter discusses both the traditional developments of Zeeman techniques at strong fields and the fundamental concepts of diamagnetism. Topics considered include historical aspects, the production of high fields, the atom in a magnetic field (Hamiltonian and symmetries, the various magnetic regimes in atomic spectra), applications of the Zeeman effect at strong B fields, the Landau regime for loosely bound particles, theoretical concepts of atomic diamagnetism, and the ultra-high-field regime and quantum electrodynamics. It is concluded that the wide implications of the problem of the strongly magnetized hydrogen atom in various domains of physics and its conceptual importance concerning theoretical methods of classical and quantum mechanics justify the experimental and theoretical efforts in atomic physics

High-k dielectrics as bioelectronic interface for field-effect transistors

Energy Technology Data Exchange (ETDEWEB)

Borstlap, D

2007-03-15

Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

Effects of magnetic field strength in the discharge channel on the performance of a multi-cusped field thruster

Directory of Open Access Journals (Sweden)

Peng Hu

2016-09-01

Full Text Available The performance characteristics of a Multi-cusped Field Thruster depending on the magnetic field strength in the discharge channel were investigated. Four thrusters with different outer diameters of the magnet rings were designed to change the magnetic field strength in the discharge channel. It is found that increasing the magnetic field strength could restrain the radial cross-field electron current and decrease the radial width of main ionization region, which gives rise to the reduction of propellant utilization and thruster performance. The test results in different anode voltage conditions indicate that both the thrust and anode efficiency are higher for the weaker magnetic field in the discharge channel.

Radiofrequency solutions in clinical high field magnetic resonance

NARCIS (Netherlands)

Andreychenko, A.

2013-01-01

Magnetic resonance imaging (MRI) and spectroscopy (MRS) benefit from the sensitivity gain at high field (≥7T). However, high field brings also certain challenges associated with growing frequency and spectral dispersion. Frequency growth results in degraded performance of large volume radiofrequency

Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

Science.gov (United States)

Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

2015-03-12

Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

Critical fields in high temperature superconductors

International Nuclear Information System (INIS)

Finnemore, D.K.

1991-01-01

An analysis of various methods to obtain the critical fields of the high temperature superconductors from experimental data is undertaken in order to find definitions of these variables that are consistent with the models used to define them. Characteristic critical fields of H c1 , H c2 and H c that occur in the Ginsburg-Landau theory are difficult to determine experimentally in the high temperature superconductors because there are additional physical phenomena that obscure the results. The lower critical field is difficult to measure because there are flux pinning and surface barrier effects to flux entry; the upper critical field is difficult because fluctuation effects are large at this phase boundary; the thermodynamic critical field is difficult because fluctuations make it difficult to know the field where the magnetization integral should be terminated. In addition to these critical fields there are at least two other cross-over fields. There is the so called irreversibility line where the vortices transform from a rigid flux line lattice to a fluid lattice and there is a second cross-over field associated with the transition from the fluctuation to the Abrikosov vortex regime. The presence of these new physical effects may require new vocabulary

High field electron linacs

International Nuclear Information System (INIS)

Le Duff, J.

1985-12-01

High field electron linacs are considered as potential candidates to provide very high energies beyond LEP. Since almost twenty years not much improvement has been made on linac technologies as they have been mostly kept at low and medium energies to be used as injectors for storage rings. Today, both their efficiency and their performances are being reconsidered, and for instance the pulse compression sheme developed at SLAC and introduced to upgrade the energy of that linac is a first step towards a new generation of linear accelerators. However this is not enough in terms of power consumption and more development is needed to improve both the efficiency of accelerating structures and the performances of RF power sources

Compact high-field superconducting quadrupole magnet with holmium poles

Energy Technology Data Exchange (ETDEWEB)

Barlow, D.B.; Kraus, R.H. Jr.; Lobb, C.T.; Menzel, M.T. (Los Alamos National Lab., NM (United States)); Walstrom, P.L. (Grumman Space Systems, Los Alamos, NM (United States))

1992-03-15

A compact high-field superconducting quadrupole magnet was designed and built with poles made of the rare-earth metal holmium. The magnet is intended for use in superconducting coupled-cavity linear accelerators where compact high-field quadrupoles are needed, but where the use of permanent magnets is ruled out because of trapped-flux losses. The magnet has a clear bore diameter of 1.8 cm, outside diameter of 11 cm, length of 11 cm, and pole tip length of 6 cm. The effect of using holmium, a material with a higher saturation field than iron, was investigated by replacing poles made of iron with identical poles made of holmium. The magnet was operated at a temperature of 4.2 K and reached a peak quadrupole field gradient of 355 T/m, a 10% increase over the same magnet with iron poles. This increase in performance is consistent with calculations based on B-H curves that were measured for holmium at 4.2 K. (orig.).

Overlay control methodology comparison: field-by-field and high-order methods

Science.gov (United States)

Huang, Chun-Yen; Chiu, Chui-Fu; Wu, Wen-Bin; Shih, Chiang-Lin; Huang, Chin-Chou Kevin; Huang, Healthy; Choi, DongSub; Pierson, Bill; Robinson, John C.

2012-03-01

Overlay control in advanced integrated circuit (IC) manufacturing is becoming one of the leading lithographic challenges in the 3x and 2x nm process nodes. Production overlay control can no longer meet the stringent emerging requirements based on linear composite wafer and field models with sampling of 10 to 20 fields and 4 to 5 sites per field, which was the industry standard for many years. Methods that have emerged include overlay metrology in many or all fields, including the high order field model method called high order control (HOC), and field by field control (FxFc) methods also called correction per exposure. The HOC and FxFc methods were initially introduced as relatively infrequent scanner qualification activities meant to supplement linear production schemes. More recently, however, it is clear that production control is also requiring intense sampling, similar high order and FxFc methods. The added control benefits of high order and FxFc overlay methods need to be balanced with the increased metrology requirements, however, without putting material at risk. Of critical importance is the proper control of edge fields, which requires intensive sampling in order to minimize signatures. In this study we compare various methods of overlay control including the performance levels that can be achieved.

Benchmark Modeling of the Near-Field and Far-Field Wave Effects of Wave Energy Arrays

Energy Technology Data Exchange (ETDEWEB)

Rhinefrank, Kenneth E; Haller, Merrick C; Ozkan-Haller, H Tuba

2013-01-26

This project is an industry-led partnership between Columbia Power Technologies and Oregon State University that will perform benchmark laboratory experiments and numerical modeling of the near-field and far-field impacts of wave scattering from an array of wave energy devices. These benchmark experimental observations will help to fill a gaping hole in our present knowledge of the near-field effects of multiple, floating wave energy converters and are a critical requirement for estimating the potential far-field environmental effects of wave energy arrays. The experiments will be performed at the Hinsdale Wave Research Laboratory (Oregon State University) and will utilize an array of newly developed Buoys' that are realistic, lab-scale floating power converters. The array of Buoys will be subjected to realistic, directional wave forcing (1:33 scale) that will approximate the expected conditions (waves and water depths) to be found off the Central Oregon Coast. Experimental observations will include comprehensive in-situ wave and current measurements as well as a suite of novel optical measurements. These new optical capabilities will include imaging of the 3D wave scattering using a binocular stereo camera system, as well as 3D device motion tracking using a newly acquired LED system. These observing systems will capture the 3D motion history of individual Buoys as well as resolve the 3D scattered wave field; thus resolving the constructive and destructive wave interference patterns produced by the array at high resolution. These data combined with the device motion tracking will provide necessary information for array design in order to balance array performance with the mitigation of far-field impacts. As a benchmark data set, these data will be an important resource for testing of models for wave/buoy interactions, buoy performance, and far-field effects on wave and current patterns due to the presence of arrays. Under the proposed project we will initiate

High performance flexible CMOS SOI FinFETs

KAUST Repository

Fahad, Hossain M.

2014-06-01

We demonstrate the first ever CMOS compatible soft etch back based high performance flexible CMOS SOI FinFETs. The move from planar to non-planar FinFETs has enabled continued scaling down to the 14 nm technology node. This has been possible due to the reduction in off-state leakage and reduced short channel effects on account of the superior electrostatic charge control of multiple gates. At the same time, flexible electronics is an exciting expansion opportunity for next generation electronics. However, a fully integrated low-cost system will need to maintain ultra-large-scale-integration density, high performance and reliability - same as today\\'s traditional electronics. Up until recently, this field has been mainly dominated by very weak performance organic electronics enabled by low temperature processes, conducive to low melting point plastics. Now however, we show the world\\'s highest performing flexible version of 3D FinFET CMOS using a state-of-the-art CMOS compatible fabrication technique for high performance ultra-mobile consumer applications with stylish design. © 2014 IEEE.

Effect of very high magnetic field on the optical properties of firefly light emitter oxyluciferin

Energy Technology Data Exchange (ETDEWEB)

Zhou, Weihang; Nakamura, Daisuke [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Wang, Yu [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); State Key Laboratory of Molecular Developmental Biology, Institute of Genetics and Developmental Biology, Chinese Academy of Sciences (China); Mochizuki, Toshimitsu [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Fukushima Renewable Energy Institute, National Institute of Advanced Industrial Science and Technology, 2-2-9 Machiike-dai, Koriyama, Fukushima 963-0215 (Japan); Akiyama, Hidefumi [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan); Takeyama, Shojiro, E-mail: takeyama@issp.u-tokyo.ac.jp [Institute for Solid State Physics, University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581 (Japan)

2015-09-15

Magnetic field effect on enzymatic reactions is under intensive study in the past decades. Recently, it was reported that firefly bioluminescence was suppressed and red-shifted significantly when exposed to external magnetic field. However in this work, by means of selective excitation, we confirmed that emission properties of firefly light emitter “oxyluciferin” are completely immune to external magnetic field of up to 53 T. These findings pose strong contrast to existing relevant results. Potential reasons for the discrepancies found and the underlying physics towards the understanding of firefly bioluminescence were discussed. - Highlights: • Effect of ultra-high magnetic field on the optical properties of firefly light emitter oxyluciferin was reported. • Emission properties of oxyluciferin were confirmed to be immune to external high magnetic fields up to 53 T. • .Potential reasons for the discrepancies between our results and previous reports and the underlying physics were discussed.

Homogenous BSCCO-2212 Round Wires for Very High Field Magnets

International Nuclear Information System (INIS)

Campbell, Scott; Holesinger, Terry; Huang, Ybing

2012-01-01

of an extremely high H c2 . For this reason, Bi 2 Sr 2 CaCu 2 O y (Bi-2212, or 2212) in the form of a multifilamentary Ag alloy matrix composite is beginning to attract the interest of the magnet community for future extremely high-field magnets or magnet-insert coils for 4.2K operation. Fig. 1 shows an example of excellent JE (engineering current density) in Bi-2212 round wire at fields up to 45 T, demonstrating the potential for high field applications of this material. For comparison, the Nb 3 Sn wires used in magnets in the 16-18 T range typically perform with J E in the range 200-500 A/mm 2 ; the Bi-2212 wire retains this level of performance to fields at least as high as 45 T, and probably significantly higher. Bi-2212 conductors have in fact been used to generate a 25 T field in a superconducting insert magnet. These two factors- the very high field critical current performance of Bi-2212, and the already demonstrated capability of this material for high field magnets up to 25 T, strongly suggest this material as a leading contender for the next generation high field superconducting (HFS) wire. This potential was recognized by the US Academy of Science's Committee on Opportunities in High Magnetic Field Science. Their report of the same name specifically calls out the high field potential for this material, and suggests that 30 T magnets appear feasible based on the performance of 2212. There are several requirements for HFS conductors. The most obvious is J E (B, T), the engineering current density at the field and temperature of operation. As shown in Fig. 1, Bi-2212 excels in this regard. Stability requirements for magnets dictate that the effective filament diameter should be less than 30 micrometers, something that Bi-2212 multifilamentary wire can uniquely satisfy among the HFS superconducting wire technologies. Additional requirements include mechanical properties that prevent stress limitation of J E at the operating conditions, resistive transition

Highly soluble [1]benzothieno[3,2-b]benzothiophene (BTBT) derivatives for high-performance, solution-processed organic field-effect transistors.

Science.gov (United States)

Ebata, Hideaki; Izawa, Takafumi; Miyazaki, Eigo; Takimiya, Kazuo; Ikeda, Masaaki; Kuwabara, Hirokazu; Yui, Tatsuto

2007-12-26

2,7-Dialkyl[1]benzothieno[3,2-b]benzothiophenes were tested as solution-processible molecular semiconductors. Thin films of the organic semiconductors deposited on Si/SiO2 substrates by spin coating have well-ordered structures as confirmed by XRD analysis. Evaluations of the devices under ambient conditions showed typical p-channel FET responses with the field-effect mobility higher than 1.0 cm2 V-1 s-1 and Ion/Ioff of approximately 10(7).

Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

Directory of Open Access Journals (Sweden)

Shijiao Han

2016-10-01

Full Text Available High-response organic field-effect transistor (OFET-based NO2 sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate (ZnO/PMMA hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO2 analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO2. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO2 molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO2 sensors in future electronic nose and environment monitoring.

Achievement of High-Response Organic Field-Effect Transistor NO2 Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction

Science.gov (United States)

Han, Shijiao; Cheng, Jiang; Fan, Huidong; Yu, Junsheng; Li, Lu

2016-01-01

High-response organic field-effect transistor (OFET)-based NO2 sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO2 analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO2. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO2 molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO2 sensors in future electronic nose and environment monitoring. PMID:27775653

Study of the performance of Micromegas detectors in magnetic field

CERN Document Server

AUTHOR|(INSPIRE)INSPIRE-00222923; The ATLAS collaboration

2015-01-01

Resistive Micromegas (MICRO MEsh GAseous Structure) detectors have been chosen by the ATLAS collaboration at LHC for the high luminosity upgrade, due to their capability to maintain full efficiency and high spatial resolution at high occupancy, for tracking muons in the forward region of the detector. The Inner Muon Station, in the high-rapidity region, the so called New Small Wheel (NSW), will be composed of micromegas detectors that will have to maintain good performance in the presence of magnetic field of up to about 0.3 T. The response of micromegas detectors is affected by the magnetic field, where the deflection of the drift electrons is described by the Lorentz angle, resulting in a bias in the reconstructed track position. Several test-beam campaigns have been performed to test the behaviour of small size resistive micromegas prototypes ($10 \\times 10 \\text{cm}^2$) in magnetic fields up to 1 T, using high momentum muon and hadron beams at CERN. These studies are performed in order to validate the cap...

Study of the performance of Micromegas detectors in magnetic field

CERN Document Server

Sampsonidis, Dimos; The ATLAS collaboration

2016-01-01

Resistive Micromegas (Micro MEsh Gaseous Structure) detectors have been chosen by the ATLAS collaboration at LHC for the high luminosity upgrade due to their capability to maintain full efficiency and high spatial resolution at high rates. Operation in the Inner Muon Station of the high-rapidity region, the so called New Small Wheel (NSW) requires also these performances to be maintened in magnetic fields up to about 0.3 T. The response of Micromegas chambers is affected by the magnetic field where the deflection of the drift electrons is described by the Lorentz angle, resulting in a bias in the reconstructed position. Several test-beam campaigns have been performed to test the behaviour of small size resistive micromegas prototypes (10x10cm2) in magnetic fields up to 1 T using high momentum muon and hadron beams at CERN. These studies are performed in order to validate the capability to operate these chambers to get unbiased tracks in the NSW conditions. Measurements of the Lorentz angle and drift velocity ...

Highly effective field-effect mobility amorphous InGaZnO TFT mediated by directional silver nanowire arrays.

Science.gov (United States)

Liu, Hung-Chuan; Lai, Yi-Chun; Lai, Chih-Chung; Wu, Bing-Shu; Zan, Hsiao-Wen; Yu, Peichen; Chueh, Yu-Lun; Tsai, Chuang-Chuang

2015-01-14

In this work, we demonstrate sputtered amorphous indium-gallium-zinc oxide thin-film transistors (a-IGZO TFTs) with a record high effective field-effect mobility of 174 cm(2)/V s by incorporating silver nanowire (AgNW) arrays to channel electron transport. Compared to the reference counterpart without nanowires, the over 5-fold enhancement in the effective field-effect mobility exhibits clear dependence on the orientation as well as the surface coverage ratio of silver nanowires. Detailed material and device analyses reveal that during the room-temperature IGZO sputtering indium and oxygen diffuse into the nanowire matrix while the nanowire morphology and good contact between IGZO and nanowires are maintained. The unchanged morphology and good interfacial contact lead to high mobility and air-ambient-stable characteristics up to 3 months. Neither hysteresis nor degraded bias stress reliability is observed. The proposed AgNW-mediated a-IGZO TFTs are promising for development of large-scale, flexible, transparent electronics.

Effective field theories

International Nuclear Information System (INIS)

Mack, G.; Kalkreuter, T.; Palma, G.; Speh, M.

1992-05-01

Effective field theories encode the predictions of a quantum field theory at low energy. The effective theory has a fairly low utraviolet cutoff. As a result, loop corrections are small, at least if the effective action contains a term which is quadratic in the fields, and physical predictions can be read straight from the effective Lagrangean. Methods will be discussed how to compute an effective low energy action from a given fundamental action, either analytically or numerically, or by a combination of both methods. Basically, the idea is to integrate out the high frequency components of fields. This requires the choice of a 'blockspin', i.e. the specification af a low frequency field as a function of the fundamental fields. These blockspins will be fields of the effective field theory. The blockspin need not be a field of the same type as one of the fundamental fields, and it may be composite. Special features of blockspin in nonabelian gauge theories will be discussed in some detail. In analytical work and in multigrid updating schemes one needs interpolation kernels A from coarse to fine grid in addition to the averaging kernels C which determines the blockspin. A neural net strategy for finding optimal kernels is presented. Numerical methods are applicable to obtain actions of effective theories on lattices of finite volume. The special case of a 'lattice' with a single site (the constraint effective potential) is of particular interest. In a higgs model, the effective action reduces in this case to the free energy, considered as a function of a gauge covariant magnetization. Its shape determines the phase structure of the theory. Its loop expansion with and without gauge fields can be used to determine finite size corrections to numerical data. (orig.)

Effect of high wind conditions on AHX performance for PFBR

International Nuclear Information System (INIS)

Goyal, P.; Datta, Anu; Verma, Vishnu; Singh, R.K.

2013-05-01

In case of normal shut down or station blackout condition the core decay heat is removed by Safety Grade Decay Heat Removal System (SGDHRS) in PFBR. The Prototype Fast Breeder Reactor (PFBR) is under construction at Kalpakkam. SGDHRS remove decay heat from the core and dissipate it into the environment with the help of Air Heat Exchanger (AHX). SGDHRS consists of four redundant numbers of totally independent circuits capable of removing decay heat from the hot pool through natural convection in the primary and intermediate sodium sides as well as in the air side. Each circuit consists of a sodium to sodium heat exchanger (DHX) and a sodium to AHX connected to intermediate sodium circuit, AHX is located at a higher elevation compared to DHX. AHX is serpentine type finned tube compact heat exchanger with sodium in the tube side and air flowing over finned tubes. A tall stack provides the driving force for the natural convection of air flow through the AHX, when the dampers are opened. The AHX is placed outside of Reactor Control Building (RCB), on the roof of Steam Generator Building. Due to the presence of nearby buildings around the stack, the AHX performance under high wind condition may be affected. A CFD simulation using CFD-ACE+ code has been carried in which effect of high wind condition and nearby building on AHX performance have been studied. For high wind condition various orientation of wind movement was considered for parametric studies. AHX performance for all the cases were compared with the results that obtained for the absence of nearby buildings. A comparative table was prepared to understand how the AHX performance is effected with the high wind condition for various direction and with the presence of nearby building. It was observed that AHX performance is influenced by high wind conditions in most of the cases for with and without presence of nearby building. Hence to ensure the optimal performance of the AHX under high wind conditions its

Study of the performance of Micromegas detectors in magnetic field

Directory of Open Access Journals (Sweden)

Dimitrios Sampsonidis

2018-01-01

Full Text Available Resistive Micromegas (MICRO MEsh GAseous Structure detectors have been chosen by the ATLAS collaboration at LHC for the high luminosity upgrade, due to their capability to maintain full efficiency and high spatial resolution at high occupancy, for tracking muons in the forward region of the detector. The Inner Muon Station, in the high-rapidity region, the so called New Small Wheel (NSW, will be composed of micromegas detectors that will have to maintain good performance in the presence of magnetic field of up to about 0.3 T. The response of micromegas detectors is affected by the magnetic field, where the deflection of the drift electrons is described by the Lorentz angle, resulting in a bias in the reconstructed track position. Several test-beam campaigns have been performed to test the behaviour of small size resistive micromegas prototypes (10×10 cm2 in magnetic fields up to 1 T, using high momentum muon and hadron beams at CERN. These studies are performed in order to validate the capability of the chambers to provide unbiased tracks in the NSW conditions. Measurements of the Lorentz angle and drift velocity as a function of the magnetic field are presented and both are compared to expectations based on Garfield-Magboltz simulations. Several methods to correct the position bias are applied, based on the chamber configuration or on the knowledge of the local value of the magnetic field. The results of these studies are presented together with an overall discussion of the Micromegas tracking capability in magnetic field.

Study of the performance of Micromegas detectors in magnetic field

Science.gov (United States)

Dimitrios, Sampsonidis

2018-02-01

Resistive Micromegas (MICRO MEsh GAseous Structure) detectors have been chosen by the ATLAS collaboration at LHC for the high luminosity upgrade, due to their capability to maintain full efficiency and high spatial resolution at high occupancy, for tracking muons in the forward region of the detector. The Inner Muon Station, in the high-rapidity region, the so called New Small Wheel (NSW), will be composed of micromegas detectors that will have to maintain good performance in the presence of magnetic field of up to about 0.3 T. The response of micromegas detectors is affected by the magnetic field, where the deflection of the drift electrons is described by the Lorentz angle, resulting in a bias in the reconstructed track position. Several test-beam campaigns have been performed to test the behaviour of small size resistive micromegas prototypes (10×10 cm2) in magnetic fields up to 1 T, using high momentum muon and hadron beams at CERN. These studies are performed in order to validate the capability of the chambers to provide unbiased tracks in the NSW conditions. Measurements of the Lorentz angle and drift velocity as a function of the magnetic field are presented and both are compared to expectations based on Garfield-Magboltz simulations. Several methods to correct the position bias are applied, based on the chamber configuration or on the knowledge of the local value of the magnetic field. The results of these studies are presented together with an overall discussion of the Micromegas tracking capability in magnetic field.

All-perovskite transparent high mobility field effect using epitaxial BaSnO{sub 3} and LaInO{sub 3}

Energy Technology Data Exchange (ETDEWEB)

Kim, Useong; Park, Chulkwon; Kim, Young Mo; Ju, Chanjong; Park, Jisung; Char, Kookrin, E-mail: kchar@phya.snu.ac.kr [Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Ha, Taewoo; Kim, Jae Hoon [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Namwook; Yu, Jaejun [Center for Theoretical Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

2015-03-01

We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO{sub 3} and LaInO{sub 3}. We have developed epitaxial LaInO{sub 3} as the gate oxide on top of BaSnO{sub 3}, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO{sub 3} films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO{sub 3} as a gate dielectric and the La-doped BaSnO{sub 3} as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm{sup 2} V{sup −1} s{sup −1}, the on/off ratio was larger than 10{sup 7}, and the subthreshold swing was 0.65 V dec{sup −1}. We discuss the possible origins for such device performance and the future directions for further improvement.

A study of build-up effects in high-energy radiation fields using a TEPC

Energy Technology Data Exchange (ETDEWEB)

Hoefert, M; Stevenson, G R [CERN, European Laboratory for Particle Physics, Geneva (Switzerland); Aroua, A [IAR, Institute for Applied Radiophysics, Lausanne (Switzerland); Sannikov, A V [IHEP, Institute for High-Energy Physics, Protvino (Russian Federation)

1995-09-04

A dose of 2 mSv close to the body surface of a pregnant woman is considered by ICRP to assure a dose limit of 1 mSv to the foetus. Such an assumption depends on the energy spectrum and composition of the external radiation field and it was tested in radiation fields containing high-energy particles similar to those found around high-energy particle accelerators and in air-craft. Measurements of dose and dose equivalent were performed as a function of wall thickness using a tissue-equivalent proportional counter (TEPC) in radiation fields at the CERN-EU Reference Radiation Facility. Results are presented both with respect to integral quantities and event size spectra. The decrease in dose and dose equivalent at a depth equivalent to that of the foetus was typically 10% in a high-energy stray radiation field and in the case of PuBe source neutrons amounted to only 30%. It is concluded that it would be prudent under such exposure conditions to limit the dose of a pregnant woman to 1 mSv in order to assure that the dose to the foetus remains below the same limit. (author)

A study of build-up effects in high-energy radiation fields using a TEPC

International Nuclear Information System (INIS)

Hoefert, M.; Stevenson, G.R.; Aroua, A.; Sannikov, A.V.

1995-01-01

A dose of 2 mSv close to the body surface of a pregnant woman is considered by ICRP to assure a dose limit of 1 mSv to the foetus. Such an assumption depends on the energy spectrum and composition of the external radiation field and it was tested in radiation fields containing high-energy particles similar to those found around high-energy particle accelerators and in air-craft. Measurements of dose and dose equivalent were performed as a function of wall thickness using a tissue-equivalent proportional counter (TEPC) in radiation fields at the CERN-EU Reference Radiation Facility. Results are presented both with respect to integral quantities and event size spectra. The decrease in dose and dose equivalent at a depth equivalent to that of the foetus was typically 10% in a high-energy stray radiation field and in the case of PuBe source neutrons amounted to only 30%. It is concluded that it would be prudent under such exposure conditions to limit the dose of a pregnant woman to 1 mSv in order to assure that the dose to the foetus remains below the same limit. (author)

A comparison of ionizing radiation and high field stress effects in n-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors

International Nuclear Information System (INIS)

Park, Mun-Soo; Na, Inmook; Wie, Chu R.

2005-01-01

n-channel power vertical double-diffused metal-oxide-semiconductor field-effect-transistor (VDMOSFET) devices were subjected to a high electric field stress or to a x-ray radiation. The current-voltage and capacitance-voltage measurements show that the channel-side interface and the drain-side interface are affected differently in the case of high electric field stress, whereas the interfaces are nearly uniformly affected in the case of x-ray radiation. This paper also shows that for the gated diode structure of VDMOSFET, the direct-current current-voltage technique measures only the drain-side interface; the subthreshold current-voltage technique measures only the channel-side interface; and the capacitance-voltage technique measures both interfaces simultaneously and clearly distinguishes the two interfaces. The capacitance-voltage technique is suggested to be a good quantitative method to examine both interface regions by a single measurement

High-field paramagnetic Meissner effect up to 14 T in melt-textured YBa{sub 2}Cu{sub 3}O{sub 7–δ}

Energy Technology Data Exchange (ETDEWEB)

Dias, F.T., E-mail: fabio.dias@ufpel.edu.br [Instituto de Física e Matemática, Universidade Federal de Pelotas, Caixa Postal 354, 96010-900, Pelotas, Rio Grande do Sul (Brazil); Vieira, V.N. [Instituto de Física e Matemática, Universidade Federal de Pelotas, Caixa Postal 354, 96010-900, Pelotas, Rio Grande do Sul (Brazil); Wolff-Fabris, F.; Kampert, E. [Dresden High Magnetic Field Laboratory, Helmholtz-Zentrum Dresden-Rossendorf, 01314, Dresden (Germany); Gouvêa, C.P.; Campos, A.P.C.; Archanjo, B.S. [National Institute of Metrology, Quality and Technology (Inmetro), Material Metrology Division, 25250-020, Duque de Caxias, Rio de Janeiro (Brazil); Schaf, J. [Instituto de Física, Universidade Federal do Rio Grande do Sul, 91501-970, Porto Alegre, Rio Grande do Sul (Brazil); Obradors, X.; Puig, T. [Institut de Ciència de Materials de Barcelona, CSIC, Universitat Autònoma de Barcelona, 08193, Bellaterra (Spain); Roa, J.J. [Departamento de Ciencia de Materiales e Ingeniería Metalúrgica, Universitat Politècnica de Catalunya, 08028, Barcelona (Spain); Sahoo, B.K. [Goverment College (Autonomous), Angul, 759143 Odisha (India)

2016-06-15

Highlights: • A persistent paramagnetic Meissner effect up to 14 T. • The PME with a slight tendency to saturate in high magnetic fields. • Strong time effects causing a paramagnetic relaxation dependent on the cooling rate. - Abstract: We have performed magnetization experiments in a melt-textured YBa{sub 2}Cu{sub 3}O{sub 7-δ} (Y123) sample with Y{sub 2}BaCuO{sub 5} (Y211) inclusions, under magnetic fields up to 14 T applied parallel or perpendicular to the ab plane. Magnetic anisotropy and paramagnetic moments were observed in both FC (field-cooling) and FCW (field-cooled warming) procedures and these features correspond to the so-called High-Field Paramagnetic Meissner Effect (HFPME). The HFPME effect increases monotonically as the magnetic field rises and a strong paramagnetic relaxation, toward increasing paramagnetic moment was additionally observed as a function of time. Microscopy analysis revealed a complex and correlated microstructure of the Y211 particles. These correlated defects are well known to cause strong flux pinning. Our results suggest a scenario of strong flux compression within weak or non-superconducting regions of the samples, developed as a consequence of the Meissner effect and assisted by strong flux pinning by the Y211 particles. This scenario is observed up to 14 T and clearly persists beyond.

Whole-globe biomechanics using high-field MRI.

Science.gov (United States)

Voorhees, Andrew P; Ho, Leon C; Jan, Ning-Jiun; Tran, Huong; van der Merwe, Yolandi; Chan, Kevin; Sigal, Ian A

2017-07-01

The eye is a complex structure composed of several interconnected tissues acting together, across the whole globe, to resist deformation due to intraocular pressure (IOP). However, most work in the ocular biomechanics field only examines the response to IOP over smaller regions of the eye. We used high-field MRI to measure IOP induced ocular displacements and deformations over the whole globe. Seven sheep eyes were obtained from a local abattoir and imaged within 48 h using MRI at multiple levels of IOP. IOP was controlled with a gravity perfusion system and a cannula inserted into the anterior chamber. T2-weighted imaging was performed to the eyes serially at 0 mmHg, 10 mmHg, 20 mmHg and 40 mmHg of IOP using a 9.4 T MRI scanner. Manual morphometry was conducted using 3D visualization software to quantify IOP-induced effects at the globe scale (e.g. axial length and equatorial diameters) or optic nerve head scale (e.g. canal diameter, peripapillary sclera bowing). Measurement sensitivity analysis was conducted to determine measurement precision. High-field MRI revealed an outward bowing of the posterior sclera and anterior bulging of the cornea due to IOP elevation. Increments in IOP from 10 to 40 mmHg caused measurable increases in axial length in 6 of 7 eyes of 7.9 ± 5.7% (mean ± SD). Changes in equatorial diameter were minimal, 0.4 ± 1.2% between 10 and 40 mmHg, and in all cases less than the measurement sensitivity. The effects were nonlinear, with larger deformations at normal IOPs (10-20 mmHg) than at elevated IOPs (20-40 mmHg). IOP also caused measurable increases in the nasal-temporal scleral canal diameter of 13.4 ± 9.7% between 0 and 20 mmHg, but not in the superior-inferior diameter. This study demonstrates that high-field MRI can be used to visualize and measure simultaneously the effects of IOP over the whole globe, including the effects on axial length and equatorial diameter, posterior sclera displacement and bowing, and even

Pulsed-High Field/High-Frequency EPR Spectroscopy

Science.gov (United States)

Fuhs, Michael; Moebius, Klaus

Pulsed high-field/high-frequency electron paramagnetic resonance (EPR) spectroscopy is used to disentangle many kinds of different effects often obscured in continuous wave (cw) EPR spectra at lower magnetic fields/microwave frequencies. While the high magnetic field increases the resolution of G tensors and of nuclear Larmor frequencies, the high frequencies allow for higher time resolution for molecular dynamics as well as for transient paramagnetic intermediates studied with time-resolved EPR. Pulsed EPR methods are used for example for relaxation-time studies, and pulsed Electron Nuclear DOuble Resonance (ENDOR) is used to resolve unresolved hyperfine structure hidden in inhomogeneous linewidths. In the present article we introduce the basic concepts and selected applications to structure and mobility studies on electron transfer systems, reaction centers of photosynthesis as well as biomimetic models. The article concludes with an introduction to stochastic EPR which makes use of an other concept for investigating resonance systems in order to increase the excitation bandwidth of pulsed EPR. The limited excitation bandwidth of pulses at high frequency is one of the main limitations which, so far, made Fourier transform methods hardly feasible.

Performance limiting effects in X-band accelerators

Directory of Open Access Journals (Sweden)

Faya Wang

2011-01-01

Full Text Available Acceleration gradient is a critical parameter for the design of future TeV-scale linear colliders. The major obstacle to higher gradient in room-temperature accelerators is rf breakdown, which is still a very mysterious phenomenon that depends on the geometry and material of the accelerator as well as the input power and operating frequency. Pulsed heating has been associated with breakdown for many years; however, there have been no experiments that clearly separate field and heating effects on the breakdown rate. Recently, such experiments have been performed at SLAC with both standing-wave and traveling-wave structures. These experiments have demonstrated that pulsed heating is limiting the gradient. Nevertheless the X-band structures breakdown studies show damage to the iris surfaces in locations of high electric field rather than of high magnetic field after thousands of breakdowns. It is not yet clear how the relative roles of electric field, magnetic field, and heating factor into the damage caused by rf breakdown. Thus, a dual-moded cavity has been designed to better study the electric field, magnetic field, and pulsed heating effects on breakdown damage.

High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

International Nuclear Information System (INIS)

Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

2014-01-01

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

Large reversible magnetostrictive effect of MnCoSi-based compounds prepared by high-magnetic-field solidification

Science.gov (United States)

Hu, Q. B.; Hu, Y.; Zhang, S.; Tang, W.; He, X. J.; Li, Z.; Cao, Q. Q.; Wang, D. H.; Du, Y. W.

2018-01-01

The MnCoSi compound is a potential magnetostriction material since the magnetic field can drive a metamagnetic transition from an antiferromagnetic phase to a high magnetization phase in it, which accompanies a large lattice distortion. However, a large driving magnetic field, magnetic hysteresis, and poor mechanical properties seriously hinder its application for magnetostriction. By substituting Fe for Mn and introducing vacancies of the Mn element, textured and dense Mn0.97Fe0.03CoSi and Mn0.88CoSi compounds are prepared through a high-magnetic-field solidification approach. As a result, large room-temperature and reversible magnetostriction effects are observed in these compounds at a low magnetic field. The origin of this large magnetostriction effect and potential applications are discussed.

Effect of a high magnetic field on the microstructures in directionally solidified Zn–Cu peritectic alloys

International Nuclear Information System (INIS)

Li, Xi; Gagnoud, Annie; Wang, Jiang; Li, Xiaolong; Fautrelle, Yves; Ren, Zhongming; Lu, Xionggang; Reinhart, Guillaume; Nguyen-Thi, Henri

2014-01-01

The effect of an axial high magnetic field on the microstructures in directionally solidified Zn–Cu peritectic alloys was investigated. The experimental results indicated that the magnetic field induced the destabilization of the liquid–solid interface and the formation of a band-like structure. The magnetic field also caused the disruption of the columnar η-Zn and ε-Zn 5 Cu dendrites. As the applied magnetic field increased, the columnar-to-equiaxed transition occurred, and the size of the equiaxed grains gradually decreased. The magnetic effects, the magnetic moment and the thermoelectric magnetic effects during the directional solidification of Zn–Cu peritectic alloys under an axial magnetic field were studied. Regular ε-Zn 5 Cu hexagons appeared on the transverse section of the sample fabricated with a high magnetic field (i.e. 16 T). In addition, electron backscatter diffraction analysis revealed that the 〈0 0 0 1〉-crystal direction of the Zn 5 Cu crystal is not only its easy magnetization direction but also its preferred growth direction. The thermoelectric magnetic effects were numerically simulated. The results indicated that a thermoelectric magnetic force acts on the solid near the liquid–solid interface and increases linearly with an increase in the magnetic field. As the effect of the magnetic moment arising from the magnetic crystalline anisotropy is eliminated, the thermoelectric magnetic effect has a substantial effect on the solidification structure. Therefore, the destabilization of the liquid–solid interface and the disruption of the dendrites during directional solidification under the magnetic field are primarily due to the thermoelectric magnetic force acting on the solid

The effect of high voltage, high frequency pulsed electric field on slain ovine cortical bone.

Science.gov (United States)

Asgarifar, Hajarossadat; Oloyede, Adekunle; Zare, Firuz

2014-04-01

High power, high frequency pulsed electric fields known as pulsed power (PP) has been applied recently in biology and medicine. However, little attention has been paid to investigate the application of pulse power in musculoskeletal system and its possible effect on functional behavior and biomechanical properties of bone tissue. This paper presents the first research investigating whether or not PP can be applied safely on bone tissue as a stimuli and what will be the possible effect of these signals on the characteristics of cortical bone by comparing the mechanical properties of this type of bone pre and post expose to PP and in comparison with the control samples. A positive buck-boost converter was applied to generate adjustable high voltage, high frequency pulses (up to 500 V and 10 kHz). The functional behavior of bone in response to pulse power excitation was elucidated by applying compressive loading until failure. The stiffness, failure stress (strength) and the total fracture energy (bone toughness) were determined as a measure of the main bone characteristics. Furthermore, an ultrasonic technique was applied to determine and comprise bone elasticity before and after pulse power stimulation. The elastic property of cortical bone samples appeared to remain unchanged following exposure to pulse power excitation for all three orthogonal directions obtained from ultrasonic technique and similarly from the compression test. Nevertheless, the compressive strength and toughness of bone samples were increased when they were exposed to 66 h of high power pulsed electromagnetic field compared to the control samples. As the toughness and the strength of the cortical bone tissue are directly associated with the quality and integrity of the collagen matrix whereas its stiffness is primarily related to bone mineral content these overall results may address that although, the pulse power stimulation can influence the arrangement or the quality of the collagen network

Performance enhancement of iron-chromium redox flow batteries by employing interdigitated flow fields

Science.gov (United States)

Zeng, Y. K.; Zhou, X. L.; Zeng, L.; Yan, X. H.; Zhao, T. S.

2016-09-01

The catalyst for the negative electrode of iron-chromium redox flow batteries (ICRFBs) is commonly prepared by adding a small amount of Bi3+ ions in the electrolyte and synchronously electrodepositing metallic particles onto the electrode surface at the beginning of charge process. Achieving a uniform catalyst distribution in the porous electrode, which is closely related to the flow field design, is critically important to improve the ICRFB performance. In this work, the effects of flow field designs on catalyst electrodeposition and battery performance are investigated. It is found that compared to the serpentine flow field (SFF) design, the interdigitated flow field (IFF) forces the electrolyte through the porous electrode between the neighboring channels and enhances species transport during the processes of both the catalyst electrodeposition and iron/chromium redox reactions, thus enabling a more uniform catalyst distribution and higher mass transport limitation. It is further demonstrated that the energy efficiency of the ICRFB with the IFF reaches 80.7% at a high current density (320 mA cm-2), which is 8.2% higher than that of the ICRFB with the SFF. With such a high performance and intrinsically low-cost active materials, the ICRFB with the IFF offers a great promise for large-scale energy storage.

Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

Science.gov (United States)

Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

2016-07-13

The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

The Sterilization Effect of Cooperative Treatment of High Voltage Electrostatic Field and Variable Frequency Pulsed Electromagnetic Field on Heterotrophic Bacteria in Circulating Cooling Water

Science.gov (United States)

Gao, Xuetong; Liu, Zhian; Zhao, Judong

2018-01-01

Compared to other treatment of industrial circulating cooling water in the field of industrial water treatment, high-voltage electrostatic field and variable frequency pulsed electromagnetic field co-sterilization technology, an advanced technology, is widely used because of its special characteristics--low energy consumption, nonpoisonous and environmentally friendly. In order to get a better cooling water sterilization effect under the premise of not polluting the environment, some experiments about sterilization of heterotrophic bacteria in industrial circulating cooling water by cooperative treatment of high voltage electrostatic field and variable frequency pulsed electromagnetic field were carried out. The comparison experiment on the sterilization effect of high-voltage electrostatic field and variable frequency pulsed electromagnetic field co-sterilization on heterotrophic bacteria in industrial circulating cooling water was carried out by change electric field strength and pulse frequency. The results show that the bactericidal rate is selective to the frequency and output voltage, and the heterotrophic bacterium can only kill under the condition of sweep frequency range and output voltage. When the voltage of the high voltage power supply is 4000V, the pulse frequency is 1000Hz and the water temperature is 30°C, the sterilization rate is 48.7%, the sterilization rate is over 90%. Results of this study have important guiding significance for future application of magnetic field sterilization.

Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials

Science.gov (United States)

Ilatikhameneh, Hesameddin; Tan, Yaohua; Novakovic, Bozidar; Klimeck, Gerhard; Rahman, Rajib; Appenzeller, Joerg

2015-12-01

In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of TFETs is their low ON-currents. 2D material based TFETs can have tight gate control and high electric fields at the tunnel junction, and can in principle generate high ON-currents along with a sub-threshold swing smaller than 60 mV/dec. Our simulations reveal that high performance TMD TFETs, not only require good gate control, but also rely on the choice of the right channel material with optimum band gap, effective mass and source/drain doping level. Unlike previous works, a full band atomistic tight binding method is used self-consistently with 3D Poisson equation to simulate ballistic quantum transport in these devices. The effect of the choice of TMD material on the performance of the device and its transfer characteristics are discussed. Moreover, the criteria for high ON-currents are explained with a simple analytic model, showing the related fundamental factors. Finally, the subthreshold swing and energy-delay of these TFETs are compared with conventional CMOS devices.

Analysis of the wake field effects in the PEP-II storage rings with extremely high currents

Energy Technology Data Exchange (ETDEWEB)

Novokhatski, A., E-mail: novo@slac.stanford.edu; Seeman, J.; Sullivan, M.

2014-01-21

We present the history and analysis of different wake field effects throughout the operational life of the PEP-II SLAC B-factory. Although the impedance of the high and low energy rings is small, the intense high-current beams generated a lot of power. The effects from these wake fields are: heating and damage of vacuum beam chamber elements like RF seals, vacuum valves, shielded bellows, BPM buttons and ceramic tiles; vacuum spikes, vacuum instabilities and high detector background; and beam longitudinal and transverse instabilities. We also discuss the methods used to eliminate these effects. Results of this analysis and the PEP-II experience may be very useful in the design of new storage rings and light sources.

Field effect in the quantum Hall regime of a high mobility graphene wire

Energy Technology Data Exchange (ETDEWEB)

Barraud, C., E-mail: cbarraud@phys.ethz.ch, E-mail: clement.barraud@univ-paris-diderot.fr; Choi, T.; Ihn, T.; Ensslin, K. [Solid State Physics Laboratory, ETH Zürich, CH-8093 Zürich (Switzerland); Butti, P.; Shorubalko, I. [Swiss Federal Laboratories of Materials Science and Technologies, EMPA Elect. Metrol. Reliabil. Lab., CH-8600 Dübendorf (Switzerland); Taniguchi, T.; Watanabe, K. [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan)

2014-08-21

In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97, 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77, 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.

Effects of valerian on subjective sedation, field sobriety testing and driving simulator performance.

Science.gov (United States)

Thomas, Kelan; Canedo, Joanne; Perry, Paul J; Doroudgar, Shadi; Lopes, Ingrid; Chuang, Hannah Mae; Bohnert, Kimberly

2016-07-01

The availability of herbal medicines over-the-counter (OTC) has increased the use of natural products for self-treatment. Valerian has been used to effectively treat generalized anxiety disorder and insomnia. Studies suggest that valerenic acid may increase gamma-aminobutyric acid (GABA) modulation in the brain. Benzodiazepines have a similar mechanism of action and have been linked to an increased risk of hospitalizations due to traffic accidents. Despite the risk of somnolence, the safety of driving while under the influence of valerian remains unknown. The purpose of the study was to determine the effects of a one-time valerian 1600mg dose on subjective sedation effects, standardized field sobriety testing (SFST) and driving simulator performance parameters. The study design was a randomized, placebo-controlled, double-blind, cross-over trial. For each session, participants received either a dose of valerian or placebo. The outcome measures included a simple visual reaction test (SVRT), subjective sleepiness scales, SFST performance scores, and driving simulator performance parameters. There were no significant differences in the SVRT or sleepiness scales between placebo and valerian exposures, but the study may have been underpowered. SFST total and individual test failure rates were not significantly different between the two exposures. The driving simulator performance parameters were equivalent between the two exposure conditions. A one-time valerian 1600mg dose, often used to treat insomnia, does not appear to impair driving simulator performance after acute ingestion. Copyright © 2016 Elsevier Ltd. All rights reserved.

PetIGA-MF: a multi-field high-performance toolbox for structure-preserving B-splines spaces

KAUST Repository

Sarmiento, Adel

2016-10-01

We describe a high-performance solution framework for isogeometric discrete differential forms based on B-splines: PetIGA-MF. Built on top of PetIGA, an open-source library we have built and developed over the last decade, PetIGA-MF is a general multi-field discretization tool. To test the capabilities of our implementation, we solve different viscous flow problems such as Darcy, Stokes, Brinkman, and Navier-Stokes equations. Several convergence benchmarks based on manufactured solutions are presented assuring optimal convergence rates of the approximations, showing the accuracy and robustness of our solver.

Attribution-Based Nocebo Effects. Perceived Effects of a Placebo Pill and a Sham Magnetic Field on Cognitive Performance and Somatic Symptoms.

Science.gov (United States)

Szemerszky, Renáta; Dömötör, Zsuzsanna; Berkes, Tímea; Köteles, Ferenc

2016-04-01

Negative non-specific (nocebo-like) effects of medications and electromagnetic fields are often described as results of mistaken attribution. The current study aimed to find empirical evidence supporting this theory. Participants completed questionnaires assessing modern health worries, health anxiety, and somatosensory amplification, were assigned to one of three conditions (placebo pill with sedative information, sham magnetic field, or control), and completed a 14-min vigilance task. Changes in physiological arousal (heart rate, heart rate variability, and skin conductance) and reported symptoms were also measured. Finally, causal attributions concerning cognitive performance and reported symptoms were assessed. No increase in symptom reports and physiological arousal was measured in the two intervention groups. A perceived negative effect on cognitive performance was attributed to both sham conditions, and attributions were connected to modern health worries. A proportion of reported symptoms was ascribed to the placebo pill but not to the sham magnetic field. Symptom attributions were not related to any assessed psychological variables. An aroused physiological state is not necessary for the automatic causal attribution process. Negative effects attributed to medication and environmental factors can be regarded as unavoidable side effects of human cognitive-emotional functioning; they might be alleviated, but cannot be completely eradicated.

High performance homes

DEFF Research Database (Denmark)

Beim, Anne; Vibæk, Kasper Sánchez

2014-01-01

Can prefabrication contribute to the development of high performance homes? To answer this question, this chapter defines high performance in more broadly inclusive terms, acknowledging the technical, architectural, social and economic conditions under which energy consumption and production occur....... Consideration of all these factors is a precondition for a truly integrated practice and as this chapter demonstrates, innovative project delivery methods founded on the manufacturing of prefabricated buildings contribute to the production of high performance homes that are cost effective to construct, energy...

ADX: a high field, high power density, advanced divertor and RF tokamak

Science.gov (United States)

LaBombard, B.; Marmar, E.; Irby, J.; Terry, J. L.; Vieira, R.; Wallace, G.; Whyte, D. G.; Wolfe, S.; Wukitch, S.; Baek, S.; Beck, W.; Bonoli, P.; Brunner, D.; Doody, J.; Ellis, R.; Ernst, D.; Fiore, C.; Freidberg, J. P.; Golfinopoulos, T.; Granetz, R.; Greenwald, M.; Hartwig, Z. S.; Hubbard, A.; Hughes, J. W.; Hutchinson, I. H.; Kessel, C.; Kotschenreuther, M.; Leccacorvi, R.; Lin, Y.; Lipschultz, B.; Mahajan, S.; Minervini, J.; Mumgaard, R.; Nygren, R.; Parker, R.; Poli, F.; Porkolab, M.; Reinke, M. L.; Rice, J.; Rognlien, T.; Rowan, W.; Shiraiwa, S.; Terry, D.; Theiler, C.; Titus, P.; Umansky, M.; Valanju, P.; Walk, J.; White, A.; Wilson, J. R.; Wright, G.; Zweben, S. J.

2015-05-01

The MIT Plasma Science and Fusion Center and collaborators are proposing a high-performance Advanced Divertor and RF tokamak eXperiment (ADX)—a tokamak specifically designed to address critical gaps in the world fusion research programme on the pathway to next-step devices: fusion nuclear science facility (FNSF), fusion pilot plant (FPP) and/or demonstration power plant (DEMO). This high-field (⩾6.5 T, 1.5 MA), high power density facility (P/S ˜ 1.5 MW m-2) will test innovative divertor ideas, including an ‘X-point target divertor’ concept, at the required performance parameters—reactor-level boundary plasma pressures, magnetic field strengths and parallel heat flux densities entering into the divertor region—while simultaneously producing high-performance core plasma conditions that are prototypical of a reactor: equilibrated and strongly coupled electrons and ions, regimes with low or no torque, and no fuelling from external heating and current drive systems. Equally important, the experimental platform will test innovative concepts for lower hybrid current drive and ion cyclotron range of frequency actuators with the unprecedented ability to deploy launch structures both on the low-magnetic-field side and the high-magnetic-field side—the latter being a location where energetic plasma-material interactions can be controlled and favourable RF wave physics leads to efficient current drive, current profile control, heating and flow drive. This triple combination—advanced divertors, advanced RF actuators, reactor-prototypical core plasma conditions—will enable ADX to explore enhanced core confinement physics, such as made possible by reversed central shear, using only the types of external drive systems that are considered viable for a fusion power plant. Such an integrated demonstration of high-performance core-divertor operation with steady-state sustainment would pave the way towards an attractive pilot plant, as envisioned in the ARC concept

A percolation approach to study the high electric field effect on electrical conductivity of insulating polymer

Science.gov (United States)

Benallou, Amina; Hadri, Baghdad; Martinez-Vega, Juan; El Islam Boukortt, Nour

2018-04-01

The effect of percolation threshold on the behaviour of electrical conductivity at high electric field of insulating polymers has been briefly investigated in literature. Sometimes the dead ends links are not taken into account in the study of the electric field effect on the electrical properties. In this work, we present a theoretical framework and Monte Carlo simulation of the behaviour of the electric conductivity at high electric field based on the percolation theory using the traps energies levels which are distributed according to distribution law (uniform, Gaussian, and power-law). When a solid insulating material is subjected to a high electric field, and during trapping mechanism the dead ends of traps affect with decreasing the electric conductivity according to the traps energies levels, the correlation length of the clusters, the length of the dead ends, and the concentration of the accessible positions for the electrons. A reasonably good agreement is obtained between simulation results and the theoretical framework.

The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

Directory of Open Access Journals (Sweden)

Donghua Liu

2015-01-01

Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

Interferometric filters for spectral discrimination in high-spectral-resolution lidar: performance comparisons between Fabry-Perot interferometer and field-widened Michelson interferometer.

Science.gov (United States)

Cheng, Zhongtao; Liu, Dong; Yang, Yongying; Yang, Liming; Huang, Hanlu

2013-11-10

Thanks to wavelength flexibility, interferometric filters such as Fabry-Perot interferometers (FPIs) and field-widened Michelson interferometers (FWMIs) have shown great convenience for spectrally separating the molecule and aerosol scattering components in the high-spectral-resolution lidar (HSRL) return signal. In this paper, performance comparisons between the FPI and FWMI as a spectroscopic discrimination filter in HSRL are performed. We first present a theoretical method for spectral transmission analysis and quantitative evaluation on the spectral discrimination. Then the process in determining the parameters of the FPI and FWMI for the performance comparisons is described. The influences from the incident field of view (FOV), the cumulative wavefront error induced by practical imperfections, and the frequency locking error on the spectral discrimination performance of the two filters are discussed in detail. Quantitative analyses demonstrate that FPI can produce higher transmittance while the remarkable spectral discrimination is one of the most appealing advantages of FWMI. As a result of the field-widened design, the FWMI still performs well even under the illumination with large FOV while the FPI is only qualified for a small incident angle. The cumulative wavefront error attaches a great effect on the spectral discrimination performance of the interferometric filters. We suggest if a cumulative wavefront error is less than 0.05 waves RMS, it is beneficial to employ the FWMI; otherwise, FPI may be more proper. Although the FWMI shows much more sensitivity to the frequency locking error, it can outperform the FPI given a locking error less than 0.1 GHz is achieved. In summary, the FWMI is very competent in HSRL applications if these practical engineering and control problems can be solved, theoretically. Some other estimations neglected in this paper can also be carried out through the analytical method illustrated herein.

High Performance Grinding and Advanced Cutting Tools

CERN Document Server

Jackson, Mark J

2013-01-01

High Performance Grinding and Advanced Cutting Tools discusses the fundamentals and advances in high performance grinding processes, and provides a complete overview of newly-developing areas in the field. Topics covered are grinding tool formulation and structure, grinding wheel design and conditioning and applications using high performance grinding wheels. Also included are heat treatment strategies for grinding tools, using grinding tools for high speed applications, laser-based and diamond dressing techniques, high-efficiency deep grinding, VIPER grinding, and new grinding wheels.

High magnetic field μSR instrument scientific case

International Nuclear Information System (INIS)

Amato, A.

2005-10-01

In order to gain more insight into the specific behavior of materials, it is often necessary to perform measurements as a function of different external parameters. Despite its high sensitivity to internal fields, this simple observation also applies for the μSR technique. The most common parameter which can be tuned during an experiment is the sample temperature. By using a range of cryostats, temperatures between 0.02 and 900 K can be covered at the PSI μSR Facility. On the other hand, and by using high-energy muons, pressures as high as 10'000 bars can nowadays be reached during μSR experiments. As will be demonstrated in the following Sections, the magnetic field is an additional external parameter playing a fundamental role when studying the ground state properties of materials in condensed matter physics and chemistry. However, the availability of high magnetic fields for μSR experiments is still rather limited. Hence, if on one hand the high value of the gyromagnetic ratio of the muon provides the high magnetic sensitivity of the method, on the other hand it can lead to very high muon-spin precession frequencies when performing measurements in applied fields (the muon-spin precession frequency in a field of 1 Tesla s 135.5 MHz). Consequently, the use of ultra-fast detectors and electronics is mandatory when measuring in magnetic fields exceeding 1 Tesla. If such fields are very intense when compared to the Earth magnetic field -4 Tesla), the energy associated with them is still modest in view of the thermal energy. Hence, the Zeeman energy splitting of a free electron in a magnetic field of 1 Tesla corresponds to a thermal energy as low as 0.67 Kelvin. It is worth mentioning that nowadays magnetic fields of the order of 10 to 15 Tesla are quite common in condensed matter laboratories and have opened up vast new exciting experimental possibilities. (author)

High magnetic field {mu}SR instrument scientific case

Energy Technology Data Exchange (ETDEWEB)

Amato, A

2005-10-15

In order to gain more insight into the specific behavior of materials, it is often necessary to perform measurements as a function of different external parameters. Despite its high sensitivity to internal fields, this simple observation also applies for the {mu}SR technique. The most common parameter which can be tuned during an experiment is the sample temperature. By using a range of cryostats, temperatures between 0.02 and 900 K can be covered at the PSI {mu}SR Facility. On the other hand, and by using high-energy muons, pressures as high as 10'000 bars can nowadays be reached during {mu}SR experiments. As will be demonstrated in the following Sections, the magnetic field is an additional external parameter playing a fundamental role when studying the ground state properties of materials in condensed matter physics and chemistry. However, the availability of high magnetic fields for {mu}SR experiments is still rather limited. Hence, if on one hand the high value of the gyromagnetic ratio of the muon provides the high magnetic sensitivity of the method, on the other hand it can lead to very high muon-spin precession frequencies when performing measurements in applied fields (the muon-spin precession frequency in a field of 1 Tesla s 135.5 MHz). Consequently, the use of ultra-fast detectors and electronics is mandatory when measuring in magnetic fields exceeding 1 Tesla. If such fields are very intense when compared to the Earth magnetic field < 10{sup -4} Tesla), the energy associated with them is still modest in view of the thermal energy. Hence, the Zeeman energy splitting of a free electron in a magnetic field of 1 Tesla corresponds to a thermal energy as low as 0.67 Kelvin. It is worth mentioning that nowadays magnetic fields of the order of 10 to 15 Tesla are quite common in condensed matter laboratories and have opened up vast new exciting experimental possibilities. (author)

Device and circuit-level performance of carbon nanotube field-effect transistor with benchmarking against a nano-MOSFET.

Science.gov (United States)

Tan, Michael Loong Peng; Lentaris, Georgios; Amaratunga Aj, Gehan

2012-08-19

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthreshold swing in silicon channel replacement while sustaining smaller channel area at higher current density. Performance metrics of both devices such as current drive strength, current on-off ratio (Ion/Ioff), energy-delay product, and power-delay product for logic gates, namely NAND and NOR, are presented. Design rules used for carbon nanotube field-effect transistors (CNTFETs) are compatible with the 45-nm MOSFET technology. The parasitics associated with interconnects are also incorporated in the model. Interconnects can affect the propagation delay in a CNTFET. Smaller length interconnects result in higher cutoff frequency.

Proposal for Research and Development of a Hadron Calorimeter for High Magnetic Fields

CERN Multimedia

2002-01-01

RD43 : We intend to pursue the R\\&D necessary to demonstrate that a Cu-scintillator hadron calorimeter can operate reliably and well at the LHC at large pseudorapidities (\\mid $\\eta$\\mid~$\\leq$~2.6) and in a high magnetic field (4~T). The chosen technique consists of embedding a wavelength shifting (WLS) fibre in a scintillator plate in the form of a $\\sigma$. A clear fibre, spliced on to the WLS fibre, transports the shifted light to a photodetector. This technique was chosen by the SDC Collaboration for their electromagnetic and hadronic calorimetry. R\\&D efforts will concentrate on radiation tolerant scintillator/WLS combinations, transducers that can provide gain and operate in high magnetic fields, the effect on the performance of dead material (e.g. coil of~$\\leq$~1 $\\lambda $) placed after 5-7 $\\lambda $, the effect on performance of a high resolution electromagnetic calorimeter, the design of a hermetic mechanical structure, the issues of calibration and monitoring.

Do dielectric nanostructures turn metallic in high-electric dc fields?

Science.gov (United States)

Silaeva, E P; Arnoldi, L; Karahka, M L; Deconihout, B; Menand, A; Kreuzer, H J; Vella, A

2014-11-12

Three-dimensional dielectric nanostructures have been analyzed using field ion microscopy (FIM) to study the electric dc field penetration inside these structures. The field is proved to be screened within a few nanometers as theoretically calculated taking into account the high-field impact ionization process. Moreover, the strong dc field of the order of 0.1 V/Å at the surface inside a dielectric nanostructure modifies its band structure leading to a strong band gap shrinkage and thus to a strong metal-like optical absorption near the surface. This metal-like behavior was theoretically predicted using first-principle calculations and experimentally proved using laser-assisted atom probe tomography (APT). This work opens up interesting perspectives for the study of the performance of all field-effect nanodevices, such as nanotransistor or super capacitor, and for the understanding of the physical mechanisms of field evaporation of dielectric nanotips in APT.

Effect of flow field with converging and diverging channels on proton exchange membrane fuel cell performance

International Nuclear Information System (INIS)

Zehtabiyan-Rezaie, Navid; Arefian, Amir; Kermani, Mohammad J.; Noughabi, Amir Karimi; Abdollahzadeh, M.

2017-01-01

Highlights: • Effect of converging and diverging channels on fuel cell performance. • Over rib flow is observed from converging channels to neighbors. • Proposed flow field enriches oxygen level and current density in catalyst layer. • Net output power is enhanced more than 16% in new flow field. - Abstract: In this study, a novel bipolar flow field design is proposed. This new design consists of placed sequentially converging and diverging channels. Numerical simulation of cathode side is used to investigate the effects of converging and diverging channels on the performance of proton exchange membrane fuel cells. Two models of constant and variable sink/source terms were implemented to consider species consumption and production. The distribution of oxygen mole fraction in gas diffusion and catalyst layers as a result of transverse over rib velocity is monitored. The results indicate that the converging channels feed two diverging neighbors. This phenomenon is a result of the over rib velocity which is caused by the pressure difference between the neighboring channels. The polarization curves show that by applying an angle of 0.3° to the channels, the net electrical output power increases by 16% compared to the base case.

Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

Science.gov (United States)

Tanaka, Takahisa; Uchida, Ken

2018-06-01

Band tails in heavily doped semiconductors are one of the important parameters that determine transfer characteristics of tunneling field-effect transistors. In this study, doping concentration and doing profile dependences of band tails in heavily doped Si nanowires were analyzed by a nonequilibrium Green function method. From the calculated band tails, transfer characteristics of nanowire tunnel field-effect transistors were numerically analyzed by Wentzel–Kramer–Brillouin approximation with exponential barriers. The calculated transfer characteristics demonstrate that the band tails induced by dopants degrade the subthreshold slopes of Si nanowires from 5 to 56 mV/dec in the worst case. On the other hand, surface doping leads to a high drain current while maintaining a small subthreshold slope.

Simulating Effects of High Angle of Attack on Turbofan Engine Performance

Science.gov (United States)

Liu, Yuan; Claus, Russell W.; Litt, Jonathan S.; Guo, Ten-Huei

2013-01-01

A method of investigating the effects of high angle of attack (AOA) flight on turbofan engine performance is presented. The methodology involves combining a suite of diverse simulation tools. Three-dimensional, steady-state computational fluid dynamics (CFD) software is used to model the change in performance of a commercial aircraft-type inlet and fan geometry due to various levels of AOA. Parallel compressor theory is then applied to assimilate the CFD data with a zero-dimensional, nonlinear, dynamic turbofan engine model. The combined model shows that high AOA operation degrades fan performance and, thus, negatively impacts compressor stability margins and engine thrust. In addition, the engine response to high AOA conditions is shown to be highly dependent upon the type of control system employed.

Effect of high-hydrostatic pressure and moderate-intensity pulsed electric field on plum.

Science.gov (United States)

García-Parra, J; González-Cebrino, F; Delgado-Adámez, J; Cava, R; Martín-Belloso, O; Élez-Martínez, P; Ramírez, R

2018-03-01

Moderate intensity pulse electric fields were applied in plum with the aim to increase bioactive compounds content of the fruit, while high-hydrostatic pressure was applied to preserve the purées. High-hydrostatic pressure treatment was compared with an equivalent thermal treatment. The addition of ascorbic acid during purée manufacture was also evaluated. The main objective of this study was to assess the effects on microorganisms, polyphenoloxidase, color and bioactive compounds of high-hydrostatic pressure, or thermal-processed plum purées made of moderate intensity pulse electric field-treated or no-moderate intensity pulse electric field-treated plums, after processing during storage. The application of moderate intensity pulse electric field to plums slightly increased the levels of anthocyanins and the antioxidant activity of purées. The application of Hydrostatic-high pressure (HHP) increased the levels of bioactive compounds in purées, while the thermal treatment preserved better the color during storage. The addition of ascorbic acid during the manufacture of plum purée was an important factor for the final quality of purées. The color and the bioactive compounds content were better preserved in purées with ascorbic acid. The no inactivation of polyphenoloxidase enzyme with treatments applied in this study affected the stability purées. Probably more intense treatments conditions (high-hydrostatic pressure and thermal treatment) would be necessary to reach better quality and shelf life during storage.

High-field dipoles for future accelerators

International Nuclear Information System (INIS)

Wipf, S.L.

1984-09-01

This report presents the concept for building superconducting accelerator dipoles with record high fields. Economic considerations favor the highest possible current density in the windings. Further discussion indicates that there is an optimal range of pinning strength for a superconducting material and that it is not likely for multifilamentary conductors to ever equal the potential performance of tape conductors. A dipole design with a tape-wound, inner high-field winding is suggested. Methods are detailed to avoid degradation caused by flux jumps and to overcome problems with the dipole ends. Concerns for force support structure and field precision are also addressed. An R and D program leading to a prototype 11-T dipole is outlined. Past and future importance of superconductivity to high-energy physics is evident from a short historical survey. Successful dipoles in the 10- to 20-T range will allow interesting options for upgrading present largest accelerators

Effect of grain boundary on the field-effect mobility of microrod single crystal organic transistors.

Science.gov (United States)

Kim, Jaekyun; Kang, Jingu; Cho, Sangho; Yoo, Byungwook; Kim, Yong-Hoon; Park, Sung Kyu

2014-11-01

High-performance microrod single crystal organic transistors based on a p-type 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) semiconductor are fabricated and the effects of grain boundaries on the carrier transport have been investigated. The spin-coating of C8-BTBT and subsequent solvent vapor annealing process enabled the formation of organic single crystals with high aspect ratio in the range of 10 - 20. It was found that the organic field-effect transistors (OFETs) based on these single crystals yield a field-effect mobility and an on/off current ratio of 8.04 cm2/Vs and > 10(5), respectively. However, single crystal OFETs with a kink, in which two single crystals are fused together, exhibited a noticeable drop of field-effect mobility, and we claim that this phenomenon results from the carrier scattering at the grain boundary.

High field MRI in the diagnosis of multiple sclerosis: high field-high yield?

International Nuclear Information System (INIS)

Wattjes, Mike P.; Barkhof, Frederik

2009-01-01

Following the approval of the U.S. Food and Drug Administration (FDA), high field magnetic resonance imaging (MRI) has been increasingly incorporated into the clinical setting. Especially in the field of neuroimaging, the number of high field MRI applications has been increased dramatically. Taking advantage on increased signal-to-noise ratio (SNR) and chemical shift, higher magnetic field strengths offer new perspectives particularly in brain imaging and also challenges in terms of several technical and physical consequences. Over the past few years, many applications of high field MRI in patients with suspected and definite multiple sclerosis (MS) have been reported including conventional and quantitative MRI methods. Conventional pulse sequences at 3 T offers higher lesion detection rates when compared to 1.5 T, particularly in anatomic regions which are important for the diagnosis of patients with MS. MR spectroscopy at 3 T is characterized by an improved spectral resolution due to increased chemical shift allowing a better quantification of metabolites. It detects significant axonal damage already in patients presenting with clinically isolated syndromes and can quantify metabolites of special interest such as glutamate which is technically difficult to quantify at lower field strengths. Furthermore, the higher susceptibility and SNR offer advantages in the field of functional MRI and diffusion tensor imaging. The recently introduced new generation of ultra-high field systems beyond 3 T allows scanning in submillimeter resolution and gives new insights into in vivo MS pathology on MRI. The objectives of this article are to review the current knowledge and level of evidence concerning the application of high field MRI in MS and to give some ideas of research perspectives in the future. (orig.)

Vol. 34 - Optimization of quench protection heater performance in high-field accelerator magnets through computational and experimental analysis

CERN Document Server

Salmi, Tiina

2016-01-01

Superconducting accelerator magnets with increasingly hi gh magnetic fields are being designed to improve the performance of the Large Hadron Collider (LHC) at CERN. One of the technical challenges is the magnet quench p rotection, i.e., preventing damage in the case of an unexpected loss of superc onductivity and the heat generation related to that. Traditionally this is d one by disconnecting the magnet current supply and using so-called protection he aters. The heaters suppress the superconducting state across a large fraction of the winding thus leading to a uniform dissipation of the stored energy. Preli minary studies suggested that the high-field Nb 3 Sn magnets under development for the LHC luminosity upgrade (HiLumi) could not be reliably protected using the existing heaters. In this thesis work I analyzed in detail the present state-of-the-art protection heater technology, aiming to optimize its perfo rmance and evaluate the prospects in high-field magnet protection. The heater efficiency analyses ...

Impact of substrate on performance of band gap engineered graphene field effect transistor

Science.gov (United States)

Tiwari, Durgesh Laxman; Sivasankaran, K.

2018-01-01

In this paper, we investigate the graphene field effect transistor (G-FET) to enhance the drain current saturation and to minimize the drain conductance (gd) using numerical simulation. This work focus on suppressing the drain conductance using silicon substrate. We studied the impact of different substrate on the performance of band gap engineered G-FET device. We used a non-equilibrium green function with mode space (NEGF_MS) to model the transport behavior of carriers for 10 nm channel length G-FET device. We compared the drain current saturation of G-FET at higher drain voltage regime on silicon, SiC, and the SiO2 substrate. This paper clearly demonstrates the effect of substrate on an electric field near drain region of G-FET device. It is shown that the substrate of G-FET is not only creating a band gap in graphene, which is important for current saturation and gd minimization, but also selection of suitable substrate can suppress generation of carrier concentration near drain region is also important.

Change in high field Q-slope by baking and anodizing

Energy Technology Data Exchange (ETDEWEB)

Eremeev, G. [LEPP, Cornell University, Ithaca, NY 14853 (United States); Padamsee, H. [LEPP, Cornell University, Ithaca, NY 14853 (United States)

2006-07-15

Low temperature RF performance of two niobium cavities that underwent different chemical treatments was measured after they were heat treated at 100 deg, C for 48 h. After heat treatment cavities were anodized in ammonia hydroxide solution for sequentially increasing voltage until baking effect was gone. The thickness of niobium finally consumed is estimated to be 20 nm. The results are discussed in view of one of the current models for the baking effect on the high field Q-slope.

Study of the performance of ATLAS muon drift-tube chambers in magntic fields and at high irradiation rates

Energy Technology Data Exchange (ETDEWEB)

Valderanis, Chrysostomos

2012-07-26

The performance of ATLAS muon drift-tube (MDT) chambers has been studied in detail using high-energy muon beams. The measurements of the drift tube properties in magnetic fields showed that inelastic collisions of the drifting electrons with the CO{sub 2} molecules in the Ar:CO{sub 2} (93:7) gas mixture of the MDT chambers have to be taken into account in the simulation of the drift properties. Such inelastic collisions are now correctly treated by the Garfield simulation programme from version 9 providing an accurate description of the behaviour of the ATLAS muon drift tubes, in particular in the magnetic field. Measurements at the Gamma Irradiation Facility at CERN were performed to study the performance of the MDT chambers in the presence of high {gamma} ray background fluences. The chambers have a spatial resolution better than 40 {mu}m at the nominal background rates expected at the Large Hadron Collider design luminosity of 10{sup 34} cm{sup -2}s{sup -1} and a resolution better than 50 {mu}m for up to five times higher background rates. Efficient muon detection up to background counting rates of 500 kHz per tube corresponding to 35% occupancy was demonstrated.

High field Moessbauer spectroscopy using water-cooled magnets

Energy Technology Data Exchange (ETDEWEB)

Chappert, J.; Regnard, J. R.

1974-07-01

A high field Moessbauer spectrometer using a Bitter coil producing fields of up to 155 kOe is described. Problems encountered in the design of this type of equipment are discussed and preliminary results demonstrating the performance of the spectrometer are presented.

Cognition and sensation in very high static magnetic fields: a randomized case-crossover study with different field strengths.

Science.gov (United States)

Heinrich, Angela; Szostek, Anne; Meyer, Patric; Nees, Frauke; Rauschenberg, Jaane; Gröbner, Jens; Gilles, Maria; Paslakis, Georgios; Deuschle, Michael; Semmler, Wolfhard; Flor, Herta

2013-01-01

To establish the extent to which representative cognitive functions in subjects undergoing magnetic resonance (MR) imaging are acutely impaired by static magnetic fields of varying field strengths. This study was approved by the local ethics committee, and informed consent was obtained from all subjects. In this single-blind case-crossover study, 41 healthy subjects underwent an extensive neuropsychologic examination while in MR units of differing field strengths (1.5, 3.0, and 7.0 T), including a mock imager with no magnetic field as a control condition. Subjects were blinded to field strength. Tests were performed while subjects were lying still in the MR unit and while the examination table was moved. The tests covered a representative set of cognitive functions, such as memory, eye-hand coordination, attention, reaction time, and visual discrimination. Subjective sensory perceptions were also assessed. Effects were analyzed with a repeated-measures analysis of variance; the within-subject factors were field strength (0, 1.5, 3.0, and 7.0 T) and state (static, dynamic). Static magnetic fields were not found to have a significant effect on cognitive function at any field strength. However, sensory perceptions did vary according to field strength. Dizziness, nystagmus, phosphenes, and head ringing were related to the strength of the static magnetic field. Static magnetic fields as high as 7.0 T did not have a significant effect on cognition. RSNA, 2012

Improved Performance of Pentacene Organic Field-Effect Transistors by Inserting a V2O5 Metal Oxide Layer

International Nuclear Information System (INIS)

Zhao Geng; Cheng Xiao-Man; Du Bo-Qun; Tian Hai-Jun; Liang Xiao-Yu

2011-01-01

We fabricate pentacene-based organic field effect transistors (OFETs), inserting a transition metal oxide (V 2 O 5 ) layer between the pentacene and Al source-drain (S/D) electrodes. The performance of the devices with V 2 O 5 /Al S/D electrodes is considerably improved compared to the pentacene-based OFET with only Al S/D electrodes. After the 10-nm V 2 O 5 layer modification, the effective field-effect mobility of the devices increases from 2.7 × 10 −3 cm 2 /V·s to 8.93× 10 −1 cm 2 /V·s. Owing to the change of the injection property, the effective threshold voltage (V th ) is changed from −7.5 V to −5 V and the on/off ratio shifts from 10 2 to 10 4 . Moreover, the dispersion of sub-threshold current in the devices disappears. These performance improvements are ascribed to the low carrier injection barrier and the reduction of contact resistance. It is indicated that V 2 O 5 layer modification is an effective approach to improve pentacene-based OFET performance. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Relationships between field performance tests in high-level soccer players

DEFF Research Database (Denmark)

Ingebrigtsen, Jørgen; Brochmann, Marit; Castagna, Carlo

2014-01-01

after two and four minutes of the Yo-Yo IR tests by testing 57 high-level soccer players. All players played regularly in one of the three highest levels of Norwegian soccer and were tested during three sessions on three consecutive days. Large correlations were observed between Yo-Yo IR1 and IR2 test...... using only one of the Yo-Yo tests and a RSA test, in a general soccer-specific field test protocol. The sub-maximal heart rate measures during Yo-Yo tests are reproducible and may be utilized for frequent, time-efficient and non-exhaustive testing of intermittent exercise capacity of high-level soccer...

High Performance Computing in Science and Engineering '15 : Transactions of the High Performance Computing Center

CERN Document Server

Kröner, Dietmar; Resch, Michael

2016-01-01

This book presents the state-of-the-art in supercomputer simulation. It includes the latest findings from leading researchers using systems from the High Performance Computing Center Stuttgart (HLRS) in 2015. The reports cover all fields of computational science and engineering ranging from CFD to computational physics and from chemistry to computer science with a special emphasis on industrially relevant applications. Presenting findings of one of Europe’s leading systems, this volume covers a wide variety of applications that deliver a high level of sustained performance. The book covers the main methods in high-performance computing. Its outstanding results in achieving the best performance for production codes are of particular interest for both scientists and engineers. The book comes with a wealth of color illustrations and tables of results.

High Performance Computing in Science and Engineering '17 : Transactions of the High Performance Computing Center

CERN Document Server

Kröner, Dietmar; Resch, Michael; HLRS 2017

2018-01-01

This book presents the state-of-the-art in supercomputer simulation. It includes the latest findings from leading researchers using systems from the High Performance Computing Center Stuttgart (HLRS) in 2017. The reports cover all fields of computational science and engineering ranging from CFD to computational physics and from chemistry to computer science with a special emphasis on industrially relevant applications. Presenting findings of one of Europe’s leading systems, this volume covers a wide variety of applications that deliver a high level of sustained performance.The book covers the main methods in high-performance computing. Its outstanding results in achieving the best performance for production codes are of particular interest for both scientists and engineers. The book comes with a wealth of color illustrations and tables of results.

Pulsed high-magnetic-field experiments: New insights into the magnetocaloric effect in Ni-Mn-In Heusler alloys

International Nuclear Information System (INIS)

Salazar Mejía, C.; Nayak, A. K.; Felser, C.; Nicklas, M.; Ghorbani Zavareh, M.; Wosnitza, J.; Skourski, Y.

2015-01-01

The present pulsed high-magnetic-field study on Ni 50 Mn 35 In 15 gives an extra insight into the thermodynamics of the martensitic transformation in Heusler shape-memory alloys. The transformation-entropy change, ΔS, was estimated from field-dependent magnetization experiments in pulsed high magnetic fields and by heat-capacity measurements in static fields. We found a decrease of ΔS with decreasing temperature. This behavior can be understood by considering the different signs of the lattice and magnetic contributions to the total entropy. Our results further imply that the magnetocaloric effect will decrease with decreasing temperature and, furthermore, the martensitic transition is not induced anymore by changing the temperature in high magnetic fields

Conceptual representation of verbs in bilinguals: semantic field effects and a second-language performance paradox.

Science.gov (United States)

Segalowitz, Norman; de Almeida, Roberto G

2002-01-01

It is well known that bilinguals perform better in their first language (L1) than in their second lanaguage (L2) in a wide range of linguistic tasks. In recent studies, however, the authors have found that bilingual participants can demonstrate faster response times to L1 stimuli than to L2 stimuli in one classification task and the reverse in a different classification task. In the current study, they investigated the reasons for this "L2-better-than-L1" effect. English-French bilinguals performed one word relatedness and two categorization tasks with verbs of motion (e.g., run) and psychological verbs (e.g., admire) in both languages. In the word relatedness task, participants judged how closely related pairs of verbs from both categories were. In a speeded semantic categorization task, participants classified the verbs according to their semantic category (psychological or motion). In an arbitrary classification task, participants had to learn how verbs had been assigned to two arbitrary categories. Participants performed better in L1 in the semantic classification task but paradoxically better in L2 in the arbitrary classification task. To account for these effects, the authors used the ratings from the word relatedness task to plot three-dimensional "semantic fields" for the verbs. Cross-language field differences were found to be significantly related to the paradoxical performance and to fluency levels. The results have implications for understanding of how bilinguals represent verbs in the mental lexicon. Copyright 2002 Elsevier Science (USA).

Employee Recognition and Performance: A Field Experiment

NARCIS (Netherlands)

C. Bradler (Christiane); A.J. Dur (Robert); S. Neckermann (Susanne); J.A. Non (Arjan)

2013-01-01

textabstractThis paper reports the results from a controlled field experiment designed to investigate the causal effect of public recognition on employee performance. We hired more than 300 employees to work on a three-hour data-entry task. In a random sample of work groups, workers unexpectedly

Employee recognition and performance: A field experiment

NARCIS (Netherlands)

Bradler, C.; Dur, R.; Neckermann, S.; Non, J.A.

2013-01-01

This paper reports the results from a controlled field experiment designed to investigate the causal effect of public recognition on employee performance. We hired more than 300 employees to work on a three-hour data-entry task. In a random sample of work groups, workers unexpectedly received

Test of piezo-ceramic motor technology in ITER relevant high magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Monti, Chiara, E-mail: chiara.monti@enea.it [Associazione EURATOM-ENEA sulla Fusione, via Enrico Fermi 45, 00044 Frascati, Rome (Italy); Besi Vetrella, Ugo; Mugnaini, Giampiero; Neri, Carlo; Rossi, Paolo; Viola, Rosario [Associazione EURATOM-ENEA sulla Fusione, via Enrico Fermi 45, 00044 Frascati, Rome (Italy); Dubus, Gregory; Damiani, Carlo [Fusion for Energy, c/ Josep Pla, 2 Torres Diagonal Litoral, 08019 Barcelona (Spain)

2014-10-15

In the framework of a Fusion for Energy (F4E) grant, a test campaign started in 2012 in order to assess the performance of the in-vessel viewing system (IVVS) probe concept and to verify its compatibility when exposed to ITER typical working conditions. ENEA laboratories went through with several tests simulating high magnetic fields, high temperature, high vacuum, gamma radiation and neutron radiation. A customized motor has been adopted to study the performances of ultrasonic piezo motors technology in high magnetic field conditions. This paper reports on the testing activity performed on the motor in a multi Tesla magnetic field. The job was carried out in a test facility of ENEA laboratories able to achieve 14 T. A maximum field of 10 T, fully compliant with ITER requirements (8 T), was applied. A specific mechanical assembly has been designed and manufactured to hold the motor in the region with high homogeneity of the field. Results obtained so far indicate that the motor is compatible with high magnetic fields, and are presented in the paper.

Effects of modified multistage field test on performance and physiological responses in wheelchair basketball players.

Science.gov (United States)

Weissland, Thierry; Faupin, Arnaud; Borel, Benoit; Berthoin, Serge; Leprêtre, Pierre-Marie

2015-01-01

A bioenergetical analysis of manoeuvrability and agility performance for wheelchair players is inexistent. It was aimed at comparing the physiological responses and performance obtained from the octagon multistage field test (MFT) and the modified condition in "8 form" (MFT-8). Sixteen trained wheelchair basketball players performed both tests in randomized condition. The levels performed (end-test score), peak values of oxygen uptake (VO2peak), minute ventilation (VEpeak), heart rate (HRpeak), peak and relative blood lactate (Δ[Lact(-)] = peak--rest values), and the perceived rating exertion (RPE) were measured. MFT-8 induced higher VO2peak and VEpeak values compared to MFT (VO2peak: 2.5 ± 0.6 versus 2.3 ± 0.6 L · min(-1) and VEpeak: 96.3 ± 29.1 versus 86.6 ± 23.4 L · min(-1); P < 0.05) with no difference in other parameters. Significant relations between VEpeak and end-test score were correlated for both field tests (P < 0.05). At exhaustion, MFT attained incompletely VO2peak and VEpeak. Among experienced wheelchair players, MFT-8 had no effect on test performance but generates higher physiological responses than MFT. It could be explained by demands of wheelchair skills occurring in 8 form during the modified condition.

High performance parallel I/O

CERN Document Server

Prabhat

2014-01-01

Gain Critical Insight into the Parallel I/O EcosystemParallel I/O is an integral component of modern high performance computing (HPC), especially in storing and processing very large datasets to facilitate scientific discovery. Revealing the state of the art in this field, High Performance Parallel I/O draws on insights from leading practitioners, researchers, software architects, developers, and scientists who shed light on the parallel I/O ecosystem.The first part of the book explains how large-scale HPC facilities scope, configure, and operate systems, with an emphasis on choices of I/O har

Dynamics of Gauge Fields at High Temperature

NARCIS (Netherlands)

Nauta, B.J.

2000-01-01

An effective description of dynamical Bose fields is provided by the classical (high-temperature) limit of thermal field theory. The main subject of this thesis is to improve the ensuing classical field theory, that is, to include the dominant quantum corrections and to add counter terms for the

Employee Recognition and Performance: A Field Experiment

OpenAIRE

Bradler, Christiane; Dur, Robert; Neckermann, Susanne; Non, Arjan

2014-01-01

This discussion paper led to a publication in 'Management Science' . This paper reports the results from a controlled field experiment designed to investigate the causal effect of unannounced, public recognition on employee performance. We hired more than 300 employees to work on a three-hour data-entry task. In a random sample of work groups, workers unexpectedly received recognition after two hours of work. We find that recognition increases subsequent performance substantially, and particu...

Effects of nano-silica on mechanical performance and microstructure of ultra-high performance concrete

Energy Technology Data Exchange (ETDEWEB)

Mendes, T. M., E-mail: thiagomendes@utfpr.edu.br [Universidade Tecnologica Federal do Parana (UTFPR), Londrina, PR (Brazil). Departamento de Engenharia Ambiental; Repette, W.L., E-mail: wellington.repette@gmail.br [Universidade Federal de Santa Catarina (UFSC), Florianopolis, SC (Brazil). Dept. de Engenharia Civil; Reis, P.J., E-mail: pjlondrina@yahoo.com.br [Univeridade Estadual de Londrina (UEL), PR (Brazil). Lab. de Fisica Nuclear Aplicada

2017-07-15

The use of nanoparticles in ultra-high strength concretes can result in a positive effect on mechanical performance of these cementitious materials. This study evaluated mixtures containing 10 and 20 wt% of silica fume, for which the optimum nano-silica content was determined, i.e. the quantity of nano-silica that resulted on the higher gain of strength. The physical characterization of raw materials was done in terms of particle size distribution, density and specific surface area. Chemical and mineralogical compositions of materials were obtained through fluorescence and X-ray diffraction. The mechanical performance was evaluated by compressive strength, flexural strength and dynamic elastic modulus measurements. The microstructural analysis of mixtures containing nano-silica was performed by X-ray diffraction, thermogravimetry, mercury intrusion porosimetry and scanning electron microscopy. Obtained results indicate an optimum content of nano-silica of 0.62 wt%, considering compressive and flexural strengths. This performance improvement was directly related to two important microstructural aspects: the packing effect and pozzolanic reaction of nano-silica. (author)

Effects of nano-silica on mechanical performance and microstructure of ultra-high performance concrete

International Nuclear Information System (INIS)

Mendes, T. M.; Repette, W.L.; Reis, P.J.

2017-01-01

The use of nanoparticles in ultra-high strength concretes can result in a positive effect on mechanical performance of these cementitious materials. This study evaluated mixtures containing 10 and 20 wt% of silica fume, for which the optimum nano-silica content was determined, i.e. the quantity of nano-silica that resulted on the higher gain of strength. The physical characterization of raw materials was done in terms of particle size distribution, density and specific surface area. Chemical and mineralogical compositions of materials were obtained through fluorescence and X-ray diffraction. The mechanical performance was evaluated by compressive strength, flexural strength and dynamic elastic modulus measurements. The microstructural analysis of mixtures containing nano-silica was performed by X-ray diffraction, thermogravimetry, mercury intrusion porosimetry and scanning electron microscopy. Obtained results indicate an optimum content of nano-silica of 0.62 wt%, considering compressive and flexural strengths. This performance improvement was directly related to two important microstructural aspects: the packing effect and pozzolanic reaction of nano-silica. (author)

Sensitivity of storage field performance to geologic and cavern design parameters in salt domes.

Energy Technology Data Exchange (ETDEWEB)

Ehgartner, Brian L. (Sandia National Laboratories, Albuquerque, NM); Park, Byoung Yoon

2009-03-01

A sensitivity study was performed utilizing a three dimensional finite element model to assess allowable cavern field sizes for strategic petroleum reserve salt domes. A potential exists for tensile fracturing and dilatancy damage to salt that can compromise the integrity of a cavern field in situations where high extraction ratios exist. The effects of salt creep rate, depth of salt dome top, dome size, caprock thickness, elastic moduli of caprock and surrounding rock, lateral stress ratio of surrounding rock, cavern size, depth of cavern, and number of caverns are examined numerically. As a result, a correlation table between the parameters and the impact on the performance of storage field was established. In general, slower salt creep rates, deeper depth of salt dome top, larger elastic moduli of caprock and surrounding rock, and a smaller radius of cavern are better for structural performance of the salt dome.

Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

International Nuclear Information System (INIS)

Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.

2005-01-01

There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity

In-channel electrochemical detection in the middle of microchannel under high electric field.

Science.gov (United States)

Kang, Chung Mu; Joo, Segyeong; Bae, Je Hyun; Kim, Yang-Rae; Kim, Yongseong; Chung, Taek Dong

2012-01-17

We propose a new method for performing in-channel electrochemical detection under a high electric field using a polyelectrolytic gel salt bridge (PGSB) integrated in the middle of the electrophoretic separation channel. The finely tuned placement of a gold working electrode and the PGSB on an equipotential surface in the microchannel provided highly sensitive electrochemical detection without any deterioration in the separation efficiency or interference of the applied electric field. To assess the working principle, the open circuit potentials between gold working electrodes and the reference electrode at varying distances were measured in the microchannel under electrophoretic fields using an electrically isolated potentiostat. In addition, "in-channel" cyclic voltammetry confirmed the feasibility of electrochemical detection under various strengths of electric fields (∼400 V/cm). Effective separation on a microchip equipped with a PGSB under high electric fields was demonstrated for the electrochemical detection of biological compounds such as dopamine and catechol. The proposed "in-channel" electrochemical detection under a high electric field enables wider electrochemical detection applications in microchip electrophoresis.

Imaging of microwave-induced acoustic fields in LiNbO{sub 3} by high-performance Brillouin microscopy

Energy Technology Data Exchange (ETDEWEB)

Vincent, B [Lab. Europeen de Recherche Univ.: Saarland-Lorraine, Univ. des Saarlandes, D-66041 Saarbruecken (Germany)]|[Lab. de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Univ. H. Poincare, Nancy I, F-54506 (France); Krueger, J K [Lab. Europeen de Recherche Univ.: Saarland-Lorraine, Univ. des Saarlandes, D-66041 Saarbruecken (Germany)]|[Fachrichtung 7.2, Experimentalphysik, Univ. des Saarlandes, Bau 38, D-66041 Saarbruecken (Germany); Elmazria, O [Laboratoire Europeen de Recherche Universitaire: Saarland-Lorraine, Universitaet des Saarlandes, D-66041 Saarbruecken (Germany)]|[Laboratoire de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Universite H. Poincare, Nancy I, F-54506 (France); Bouvot, L [Laboratoire Europeen de Recherche Universitaire: Saarland-Lorraine, Universitaet des Saarlandes, D-66041 Saarbruecken (Germany)]|[Laboratoire de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Universite H. Poincare, Nancy I, F-54506 (France); Mainka, J [Laboratoire Europeen de Recherche Universitaire: Saarland-Lorraine, Universitaet des Saarlandes, D-66041 Saarbruecken (Germany)]|[Fachrichtung 7.2, Experimentalphysik, Universitaet des Saarlandes, Bau 38, D-66041 Saarbruecken (Germany); Sanctuary, R [Laboratoire Europeen de Recherche Universitaire: Saarland-Lorraine, Universitaet des Saarlandes, D-66041 Saarbruecken (Germany)]|[Laboratoire de Physique des Materiaux, Campus Luxembourg-Limpertsberg, L-1511 Luxembourg (Luxembourg); Rouxel, D [Lab. Europeen de Recherche Univ.: Saarland-Lorraine, Univ. des Saarlandes, D-66041 Saarbruecken (Germany)]|[Lab. de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Univ. H. Poincare, Nancy I, F-54506 (France); Alnot, P [Lab. Europeen de Recherche Univ.: Saarland-Lorraine, Univ. des Saarlandes, D-66041 Saarbruecken (Germany)]|[Lab. de Physique des Milieux Ionises et Applications, CNRS-UMR 7040, Univ. H. Poincare, Nancy I, F-54506 (France)

2005-06-21

High performance Brillouin microscopy (BM) has been used to characterize the spatial distribution of piezoelectrically induced acoustic fields excited at microwave frequencies in a LiNbO{sub 3} single crystal. It is demonstrated that under suitable conditions BM is able to detect microwave-induced bulk as well as surface acoustic waves. Brillouin spectroscopy is able to probe sound wave intensities of induced phonons, which are as small as those of thermal phonons.

Molecular dynamics in high electric fields

International Nuclear Information System (INIS)

Apostol, M.; Cune, L.C.

2016-01-01

Highlights: • New method for rotation molecular spectra in high electric fields. • Parametric resonances – new features in spectra. • New elementary excitations in polar solids from dipolar interaction (“dipolons”). • Discussion about a possible origin of the ferroelectricity from dipolar interactions. - Abstract: Molecular rotation spectra, generated by the coupling of the molecular electric-dipole moments to an external time-dependent electric field, are discussed in a few particular conditions which can be of some experimental interest. First, the spherical-pendulum molecular model is reviewed, with the aim of introducing an approximate method which consists in the separation of the azimuthal and zenithal motions. Second, rotation spectra are considered in the presence of a static electric field. Two particular cases are analyzed, corresponding to strong and weak fields. In both cases the classical motion of the dipoles consists of rotations and vibrations about equilibrium positions; this motion may exhibit parametric resonances. For strong fields a large macroscopic electric polarization may appear. This situation may be relevant for polar matter (like pyroelectrics, ferroelectrics), or for heavy impurities embedded in a polar solid. The dipolar interaction is analyzed in polar condensed matter, where it is shown that new polarization modes appear for a spontaneous macroscopic electric polarization (these modes are tentatively called “dipolons”); one of the polarization modes is related to parametric resonances. The extension of these considerations to magnetic dipoles is briefly discussed. The treatment is extended to strong electric fields which oscillate with a high frequency, as those provided by high-power lasers. It is shown that the effect of such fields on molecular dynamics is governed by a much weaker, effective, renormalized, static electric field.

Field-effect transistor memories based on ferroelectric polymers

Science.gov (United States)

Zhang, Yujia; Wang, Haiyang; Zhang, Lei; Chen, Xiaomeng; Guo, Yu; Sun, Huabin; Li, Yun

2017-11-01

Field-effect transistors based on ferroelectrics have attracted intensive interests, because of their non-volatile data retention, rewritability, and non-destructive read-out. In particular, polymeric materials that possess ferroelectric properties are promising for the fabrications of memory devices with high performance, low cost, and large-area manufacturing, by virtue of their good solubility, low-temperature processability, and good chemical stability. In this review, we discuss the material characteristics of ferroelectric polymers, providing an update on the current development of ferroelectric field-effect transistors (Fe-FETs) in non-volatile memory applications. Program supported partially by the NSFC (Nos. 61574074, 61774080), NSFJS (No. BK20170075), and the Open Partnership Joint Projects of NSFC-JSPS Bilateral Joint Research Projects (No. 61511140098).

High-performance noncontact thermal diode via asymmetric nanostructures

Science.gov (United States)

Shen, Jiadong; Liu, Xianglei; He, Huan; Wu, Weitao; Liu, Baoan

2018-05-01

Electric diodes, though laying the foundation of modern electronics and information processing industries, suffer from ineffectiveness and even failure at high temperatures. Thermal diodes are promising alternatives to relieve above limitations, but usually possess low rectification ratios, and how to obtain a high-performance thermal rectification effect is still an open question. This paper proposes an efficient contactless thermal diode based on the near-field thermal radiation of asymmetric doped silicon nanostructures. The rectification ratio computed via exact scattering theories is demonstrated to be as high as 10 at a nanoscale gap distance and period, outperforming the counterpart flat-plate diode by more than one order of magnitude. This extraordinary performance mainly lies in the higher forward and lower reverse radiative heat flux within the low frequency band compared with the counterpart flat-plate diode, which is caused by a lower loss and smaller cut-off wavevector of nanostructures for the forward and reversed scheme, respectively. This work opens new routes to realize high performance thermal diodes, and may have wide applications in efficient thermal computing, thermal information processing, and thermal management.

High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

Science.gov (United States)

Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

2018-03-01

We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

High-field proton MRS of human brain

Energy Technology Data Exchange (ETDEWEB)

Di Costanzo, Alfonso E-mail: alfonso.dicostanzo@unina2.it; Trojsi, F.; Tosetti, M.; Giannatempo, G.M.; Nemore, F.; Piccirillo, M.; Bonavita, S.; Tedeschi, G.; Scarabino, T

2003-11-01

Proton magnetic resonance spectroscopy ({sup 1}H-MRS) of the brain reveals specific biochemical information about cerebral metabolites, which may support clinical diagnoses and enhance the understanding of neurological disorders. The advantages of performing {sup 1}H-MRS at higher field strengths include better signal to noise ratio (SNR) and increased spectral, spatial and temporal resolution, allowing the acquisition of high quality, easily quantifiable spectra in acceptable imaging times. In addition to improved measurement precision of N-acetylaspartate, choline, creatine and myo-inositol, high-field systems allow the high-resolution measurement of other metabolites, such as glutamate, glutamine, {gamma}-aminobutyric acid, scyllo-inositol, aspartate, taurine, N-acetylaspartylglutamate, glucose and branched amino acids, thus extending the range of metabolic information. However, these advantages may be hampered by intrinsic field-dependent technical difficulties, such as decreased T2 signal, chemical shift dispersion errors, J-modulation anomalies, increased magnetic susceptibility, eddy current artifacts, limitations in the design of homogeneous and sensitive radiofrequency (RF) coils, magnetic field instability and safety issues. Several studies demonstrated that these limitations could be overcome, suggesting that the appropriate optimization of high-field {sup 1}H-MRS would expand the application in the fields of clinical research and diagnostic routine.

Enhanced Field Emission Studies on Niobium Surfaces Relevant to High Field Superconducting Radio-Frequency Devices

Energy Technology Data Exchange (ETDEWEB)

Wang, Tong [Virginia Polytechnic Inst. and State Univ. (Virginia Tech), Blacksburg, VA (United States)

2002-09-18

Enhanced field emission (EFE) presents the main impediment to higher acceleration gradients in superconducting niobium (Nb) radiofrequency cavities for particle accelerators. The strength, number and sources of EFE sites strongly depend on surface preparation and handling. The main objective of this thesis project is to systematically investigate the sources of EFE from Nb, to evaluate the best available surface preparation techniques with respect to resulting field emission, and to establish an optimized process to minimize or eliminate EFE. To achieve these goals, a scanning field emission microscope (SFEM) was designed and built as an extension to an existing commercial scanning electron microscope (SEM). In the SFEM chamber of ultra high vacuum, a sample is moved laterally in a raster pattern under a high voltage anode tip for EFE detection and localization. The sample is then transferred under vacuum to the SEM chamber equipped with an energy-dispersive x-ray spectrometer for individual emitting site characterization. Compared to other systems built for similar purposes, this apparatus has low cost and maintenance, high operational flexibility, considerably bigger scan area, as well as reliable performance. EFE sources from planar Nb have been studied after various surface preparation, including chemical etching and electropolishing, combined with ultrasonic or high-pressure water rinse. Emitters have been identified, analyzed and the preparation process has been examined and improved based on EFE results. As a result, field-emission-free or near field-emission-free surfaces at ~140 MV/m have been consistently achieved with the above techniques. Characterization on the remaining emitters leads to the conclusion that no evidence of intrinsic emitters, i.e., no fundamental electric field limit induced by EFE, has been observed up to ~140 MV/m. Chemically etched and electropolished Nb are compared and no significant difference is observed up to ~140 MV/m. To

Enhanced Field Emission Studies on Niobium Surfaces Relevant to High Field Superconducting Radio-Frequency Devices

International Nuclear Information System (INIS)

Tong Wang

2002-01-01

Enhanced field emission (EFE) presents the main impediment to higher acceleration gradients in superconducting niobium (Nb) radio frequency cavities for particle accelerators. The strength, number and sources of EFE sites strongly depend on surface preparation and handling. The main objective of this thesis project is to systematically investigate the sources of EFE from Nb, to evaluate the best available surface preparation techniques with respect to resulting field emission, and to establish an optimized process to minimize or eliminate EFE. To achieve these goals, a scanning field emission microscope (SFEM) was designed and built as an extension to an existing commercial scanning electron microscope (SEM). In the SFEM chamber of ultra high vacuum, a sample is moved laterally in a raster pattern under a high voltage anode tip for EFE detection and localization. The sample is then transferred under vacuum to the SEM chamber equipped with an energy-dispersive x-ray spectrometer for individual emitting site characterization. Compared to other systems built for similar purposes, this apparatus has low cost and maintenance, high operational flexibility, considerably bigger scan area, as well as reliable performance. EFE sources from planar Nb have been studied after various surface preparation, including chemical etching and electropolishing, combined with ultrasonic or high-pressure water rinse. Emitters have been identified, analyzed and the preparation process has been examined and improved based on EFE results. As a result, field-emission-free or near field-emission-free surfaces at ∼140 MV/m have been consistently achieved with the above techniques. Characterization on the remaining emitters leads to the conclusion that no evidence of intrinsic emitters, i.e., no fundamental electric field limit induced by EFE, has been observed up to ∼140 MV/m. Chemically etched and electropolished Nb are compared and no significant difference is observed up to ∼140 MV

Homo-junction ferroelectric field-effect-transistor memory device using solution-processed lithium-doped zinc oxide thin films

KAUST Repository

Nayak, Pradipta K.; Caraveo-Frescas, J. A.; Bhansali, Unnat. S.; Alshareef, Husam N.

2012-01-01

High performance homo-junction field-effect transistor memory devices were prepared using solution processed transparent lithium-doped zinc oxide thin films for both the ferroelectric and semiconducting active layers. A highest field-effect mobility

Effects of age, maturity and body dimensions on match running performance in highly trained under-15 soccer players.

Science.gov (United States)

Buchheit, Martin; Mendez-Villanueva, Alberto

2014-01-01

The aim of the present study was to compare, in 36 highly trained under-15 soccer players, the respective effects of age, maturity and body dimensions on match running performance. Maximal sprinting (MSS) and aerobic speeds were estimated. Match running performance was analysed with GPS (GPSport, 1 Hz) during 19 international friendly games (n = 115 player-files). Total distance and distance covered >16 km h(-1) (D > 16 km h(-1)) were collected. Players advanced in age and/or maturation, or having larger body dimensions presented greater locomotor (Cohen's d for MSS: 0.5-1.0, likely to almost certain) and match running performances (D > 16 km h(-1): 0.2-0.5, possibly to likely) than their younger, less mature and/or smaller teammates. These age-, maturation- and body size-related differences were of larger magnitude for field test measures versus match running performance. Compared with age and body size (unclear to likely), maturation (likely to almost certainly for all match variables) had the greatest impact on match running performance. The magnitude of the relationships between age, maturation and body dimensions and match running performance were position-dependent. Within a single age-group in the present player sample, maturation had a substantial impact on match running performance, especially in attacking players. Coaches may need to consider players' maturity status when assessing their on-field playing performance.

Magnetic Field Effects and Electromagnetic Wave Propagation in Highly Collisional Plasmas.

Science.gov (United States)

Bozeman, Steven Paul

The homogeneity and size of radio frequency (RF) and microwave driven plasmas are often limited by insufficient penetration of the electromagnetic radiation. To investigate increasing the skin depth of the radiation, we consider the propagation of electromagnetic waves in a weakly ionized plasma immersed in a steady magnetic field where the dominant collision processes are electron-neutral and ion-neutral collisions. Retaining both the electron and ion dynamics, we have adapted the theory for cold collisionless plasmas to include the effects of these collisions and obtained the dispersion relation at arbitrary frequency omega for plane waves propagating at arbitrary angles with respect to the magnetic field. We discuss in particular the cases of magnetic field enhanced wave penetration for parallel and perpendicular propagation, examining the experimental parameters which lead to electromagnetic wave propagation beyond the collisional skin depth. Our theory predicts that the most favorable scaling of skin depth with magnetic field occurs for waves propagating nearly parallel to B and for omega << Omega_{rm e} where Omega_{rm e} is the electron cyclotron frequency. The scaling is less favorable for propagation perpendicular to B, but the skin depth does increase for this case as well. Still, to achieve optimal wave penetration, we find that one must design the plasma configuration and antenna geometry so that one generates primarily the appropriate angles of propagation. We have measured plasma wave amplitudes and phases using an RF magnetic probe and densities using Stark line broadening. These measurements were performed in inductively coupled plasmas (ICP's) driven with a standard helical coil, a reverse turn (Stix) coil, and a flat spiral coil. Density measurements were also made in a microwave generated plasma. The RF magnetic probe measurements of wave propagation in a conventional ICP with wave propagation approximately perpendicular to B show an increase in

Modeling of Diamond Field-Emitter-Arrays for high brightness photocathode applications

Science.gov (United States)

Kwan, Thomas; Huang, Chengkun; Piryatinski, Andrei; Lewellen, John; Nichols, Kimberly; Choi, Bo; Pavlenko, Vitaly; Shchegolkov, Dmitry; Nguyen, Dinh; Andrews, Heather; Simakov, Evgenya

2017-10-01

We propose to employ Diamond Field-Emitter-Arrays (DFEAs) as high-current-density ultra-low-emittance photocathodes for compact laser-driven dielectric accelerators capable of generating ultra-high brightness electron beams for advanced applications. We develop a semi-classical Monte-Carlo photoemission model for DFEAs that includes carriers' transport to the emitter surface and tunneling through the surface under external fields. The model accounts for the electronic structure size quantization affecting the transport and tunneling process within the sharp diamond tips. We compare this first principle model with other field emission models, such as the Child-Langmuir and Murphy-Good models. By further including effects of carrier photoexcitation, we perform simulations of the DFEAs' photoemission quantum yield and the emitted electron beam. Details of the theoretical model and validation against preliminary experimental data will be presented. Work ssupported by LDRD program at LANL.

Demonstration of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs).

Science.gov (United States)

Choi, Woo Young; Lee, Hyun Kook

2016-01-01

The steady scaling-down of semiconductor device for improving performance has been the most important issue among researchers. Recently, as low-power consumption becomes one of the most important requirements, there have been many researches about novel devices for low-power consumption. Though scaling supply voltage is the most effective way for low-power consumption, performance degradation is occurred for metal-oxide-semiconductor field-effect transistors (MOSFETs) when supply voltage is reduced because subthreshold swing (SS) of MOSFETs cannot be lower than 60 mV/dec. Thus, in this thesis, hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) are investigated as one of the most promising alternatives to MOSFETs. By replacing source-side gate insulator with a high- k material, HG TFETs show higher on-current, suppressed ambipolar current and lower SS than conventional TFETs. Device design optimization through simulation was performed and fabrication based on simulation demonstrated that performance of HG TFETs were better than that of conventional TFETs. Especially, enlargement of gate insulator thickness while etching gate insulator at the source side was improved by introducing HF vapor etch process. In addition, the proposed HG TFETs showed higher performance than our previous results by changing structure of sidewall spacer by high- k etching process.

High Humidity Aerodynamic Effects Study on Offshore Wind Turbine Airfoil/Blade Performance through CFD Analysis

Directory of Open Access Journals (Sweden)

Weipeng Yue

2017-01-01

Full Text Available Damp air with high humidity combined with foggy, rainy weather, and icing in winter weather often is found to cause turbine performance degradation, and it is more concerned with offshore wind farm development. To address and understand the high humidity effects on wind turbine performance, our study has been conducted with spread sheet analysis on damp air properties investigation for air density and viscosity; then CFD modeling study using Fluent was carried out on airfoil and blade aerodynamic performance effects due to water vapor partial pressure of mixing flow and water condensation around leading edge and trailing edge of airfoil. It is found that the high humidity effects with water vapor mixing flow and water condensation thin film around airfoil may have insignificant effect directly on airfoil/blade performance; however, the indirect effects such as blade contamination and icing due to the water condensation may have significant effects on turbine performance degradation. Also it is that found the foggy weather with microwater droplet (including rainy weather may cause higher drag that lead to turbine performance degradation. It is found that, at high temperature, the high humidity effect on air density cannot be ignored for annual energy production calculation. The blade contamination and icing phenomenon need to be further investigated in the next study.

High gain, low noise, fully complementary logic inverter based on bi-layer WSe{sub 2} field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Das, Saptarshi; Roelofs, Andreas [Center for Nanoscale Material, Argonne National Laboratory, Argonne, Illinois 60439 (United States); Dubey, Madan [U.S. Army Research Laboratory, Adelphi, Maryland 20783 (United States)

2014-08-25

In this article, first, we show that by contact work function engineering, electrostatic doping and proper scaling of both the oxide thickness and the flake thickness, high performance p- and n-type WSe{sub 2} field effect transistors (FETs) can be realized. We report record high drive current of 98 μA/μm for the electron conduction and 110 μA/μm for the hole conduction in Schottky barrier WSe{sub 2} FETs. Then, we combine high performance WSe{sub 2} PFET with WSe{sub 2} NFET in double gated transistor geometry to demonstrate a fully complementary logic inverter. We also show that by adjusting the threshold voltages for the NFET and the PFET, the gain and the noise margin of the inverter can be significantly enhanced. The maximum gain of our chemical doping free WSe{sub 2} inverter was found to be ∼25 and the noise margin was close to its ideal value of ∼2.5 V for a supply voltage of V{sub DD} = 5.0 V.

New 30 kA power system at Fermilab and its use for measuring the effects of ripple current on the performance of superconducting high field magnets

Energy Technology Data Exchange (ETDEWEB)

Carcagno, R.; Feher, S.; Garvey, J.; Jaskierny, W.; Lamm, M.; Makulski, A.; Orris, D.F.; Pfeffer, H.; Tartaglia, M.; Tompkins, J.; Wolff, D.; /Fermilab

2004-12-01

A new 30 kA, 30 V dc Power System was designed, built, and commissioned at Fermilab for testing Superconducting High Field Magnets. This system has been successfully supporting operations at the Fermilab Magnet Test Facility since April 2002. It is based on six commercial 150 kW Power Energy Industries power supply modules and the following in-house modules: six 720 Hz filters, two 15 kA/1kV dc solid-state dump switch, and a 3 MJ/30 kA/1 kV dc dump resistor. Additional inhouse electronic components were designed and built to provide precise current regulation and distribution of current and current rate of change. An industrial-type Programmable Logic Controller system was used to provide equipment interlocks and monitoring. This paper summarizes studies on the influence of characteristics of this new power system--such as ripple current--on the performance of High Field Superconducting magnets.

New 30 kA power system at Fermilab and its use for measuring the effects of ripple current on the performance of superconducting high field magnets

International Nuclear Information System (INIS)

Carcagno, R.; Feher, S.; Garvey, J.; Jaskierny, W.; Lamm, M.; Makulski, A.; Orris, D.F.; Pfeffer, H.; Tartaglia, M.; Tompkins, J.; Wolff, D.

2004-01-01

A new 30 kA, 30 V dc Power System was designed, built, and commissioned at Fermilab for testing Superconducting High Field Magnets. This system has been successfully supporting operations at the Fermilab Magnet Test Facility since April 2002. It is based on six commercial 150 kW Power Energy Industries power supply modules and the following in-house modules: six 720 Hz filters, two 15 kA/1kV dc solid-state dump switch, and a 3 MJ/30 kA/1 kV dc dump resistor. Additional in-house electronic components were designed and built to provide precise current regulation and distribution of current and current rate of change. An industrial-type Programmable Logic Controller system was used to provide equipment interlocks and monitoring. This paper summarizes studies on the influence of characteristics of this new power system--such as ripple current--on the performance of High Field Superconducting Magnets

Organic semiconductors for organic field-effect transistors

International Nuclear Information System (INIS)

Yamashita, Yoshiro

2009-01-01

The advantages of organic field-effect transistors (OFETs), such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed. (topical review)

Organic semiconductors for organic field-effect transistors

Directory of Open Access Journals (Sweden)

Yoshiro Yamashita

2009-01-01

Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

The Effect of Wheel Size on Mobility Performance in Wheelchair Athletes

NARCIS (Netherlands)

Mason, B.; van der Woude, L.; Lenton, J. P.; Goosey-Tolfrey, V.

2012-01-01

The purpose of the current study was to investigate the effects of different wheel sizes, with fixed gear ratios, on maximal effort mobility performance in wheelchair athletes. 13 highly trained wheelchair basketball players, grouped by classification level, performed a battery of 3 field tests in

Influence of High-Energy Proton Irradiation on β-Ga2O3 Nanobelt Field-Effect Transistors.

Science.gov (United States)

Yang, Gwangseok; Jang, Soohwan; Ren, Fan; Pearton, Stephen J; Kim, Jihyun

2017-11-22

The robust radiation resistance of wide-band gap materials is advantageous for space applications, where the high-energy particle irradiation deteriorates the performance of electronic devices. We report on the effects of proton irradiation of β-Ga 2 O 3 nanobelts, whose energy band gap is ∼4.85 eV at room temperature. Back-gated field-effect transistor (FET) based on exfoliated quasi-two-dimensional β-Ga 2 O 3 nanobelts were exposed to a 10 MeV proton beam. The proton-dose- and time-dependent characteristics of the radiation-damaged FETs were systematically analyzed. A 73% decrease in the field-effect mobility and a positive shift of the threshold voltage were observed after proton irradiation at a fluence of 2 × 10 15 cm -2 . Greater radiation-induced degradation occurs in the conductive channel of the β-Ga 2 O 3 nanobelt than at the contact between the metal and β-Ga 2 O 3 . The on/off ratio of the exfoliated β-Ga 2 O 3 FETs was maintained even after proton doses up to 2 × 10 15 cm -2 . The radiation-induced damage in the β-Ga 2 O 3 -based FETs was significantly recovered after rapid thermal annealing at 500 °C. The outstanding radiation durability of β-Ga 2 O 3 renders it a promising building block for space applications.

Enhancing the performance of the light field microscope using wavefront coding.

Science.gov (United States)

Cohen, Noy; Yang, Samuel; Andalman, Aaron; Broxton, Michael; Grosenick, Logan; Deisseroth, Karl; Horowitz, Mark; Levoy, Marc

2014-10-06

Light field microscopy has been proposed as a new high-speed volumetric computational imaging method that enables reconstruction of 3-D volumes from captured projections of the 4-D light field. Recently, a detailed physical optics model of the light field microscope has been derived, which led to the development of a deconvolution algorithm that reconstructs 3-D volumes with high spatial resolution. However, the spatial resolution of the reconstructions has been shown to be non-uniform across depth, with some z planes showing high resolution and others, particularly at the center of the imaged volume, showing very low resolution. In this paper, we enhance the performance of the light field microscope using wavefront coding techniques. By including phase masks in the optical path of the microscope we are able to address this non-uniform resolution limitation. We have also found that superior control over the performance of the light field microscope can be achieved by using two phase masks rather than one, placed at the objective's back focal plane and at the microscope's native image plane. We present an extended optical model for our wavefront coded light field microscope and develop a performance metric based on Fisher information, which we use to choose adequate phase masks parameters. We validate our approach using both simulated data and experimental resolution measurements of a USAF 1951 resolution target; and demonstrate the utility for biological applications with in vivo volumetric calcium imaging of larval zebrafish brain.

Long-Term Field Performance of Pervious Concrete Pavement

Directory of Open Access Journals (Sweden)

Aleksandra Radlińska

2012-01-01

Full Text Available The work described in this paper provides an evaluation of an aged pervious concrete pavement in the Northeastern United States to provide a better understanding of the long-lasting effects of placement techniques as well as the long-term field performance of porous pavement, specifically in areas susceptible to freezing and thawing. Multiple samples were taken from the existing pavement and were examined in terms of porosity and unit weight, compressive and splitting tensile strength, and the depth and degree of clogging. It was concluded that improper placement and curing led to uneven pavement thickness, irregular pore distribution within the pervious concrete, and highly variable strength values across the site, as well as sealed surfaces that prevented infiltration.

Effects of anesthetic agents on brain blood oxygenation level revealed with ultra-high field MRI

International Nuclear Information System (INIS)

Ciobanu, Luisa; Reynaud, Olivier; Le Bihan, Denis; Uhrig, Lynn; Jarraya, Bechir

2012-01-01

During general anesthesia it is crucial to control systemic hemodynamics and oxygenation levels. However, anesthetic agents can affect cerebral hemodynamics and metabolism in a drug-dependent manner, while systemic hemodynamics is stable. Brain-wide monitoring of this effect remains highly challenging. Because T2'*-weighted imaging at ultra-high magnetic field strengths benefits from a dramatic increase in contrast to noise ratio, we hypothesized that it could monitor anesthesia effects on brain blood oxygenation. We scanned rat brains at 7 T and 17.2 T under general anesthesia using different anesthetics (isoflurane, ketamine-xylazine, medetomidine). We showed that the brain/vessels contrast in T2'*- weighted images at 17.2 T varied directly according to the applied pharmacological anesthetic agent, a phenomenon that was visible, but to a much smaller extent at 7 T. This variation is in agreement with the mechanism of action of these agents. These data demonstrate that preclinical ultra-high field MRI can monitor the effects of a given drug on brain blood oxygenation level in the absence of systemic blood oxygenation changes and of any neural stimulation. (authors)

Radiation Fields in High Energy Accelerators and their impact on Single Event Effects

CERN Document Server

García Alía, Rubén; Wrobel, Frédéric; Brugger, Markus

Including calculation models and measurements for a variety of electronic components and their concerned radiation environments, this thesis describes the complex radiation field present in the surrounding of a high-energy hadron accelerator and assesses the risks related to it in terms of Single Event Effects (SEE). It is shown that this poses not only a serious threat to the respective operation of modern accelerators but also highlights the impact on other high-energy radiation environments such as those for ground and avionics applications. Different LHC-like radiation environments are described in terms of their hadron composition and energy spectra. They are compared with other environments relevant for electronic component operation such as the ground-level, avionics or proton belt. The main characteristic of the high-energy accelerator radiation field is its mixed nature, both in terms of hadron types and energy interval. The threat to electronics ranges from neutrons of thermal energies to GeV hadron...

Effectively Managing Nuclear Risk Through Human Performance Improvement

International Nuclear Information System (INIS)

Coe, Richard; Lake, Patricia

2003-01-01

The U.S. commercial nuclear industry has just completed an outstanding decade of plant performance. Safety levels and electric production are at unprecedented high levels and continue to exceed even high industry goals. Nuclear energy continues to keep the highest priority on performance improvement programs and highly trained and qualified people that maintain its record setting safety and reliability of operations. While the industry has maintained a high level of performance, the advent of deregulation and the consolidation of nuclear power plant ownership, as well as the current climate for concern about both rising energy costs and the availability of power, have raised the standard for nuclear energy's level of competitiveness in today's market place. The resulting challenge is how to more effectively manage risk and to improve performance even further in a generally high-performing industry. One of the most effective ways to develop this culture is to apply the principles of Hum an Performance Technology, or HPT. HPT is a relatively new field. Its principles are derived from the research and practice of behavioral and cognitive psychologists, instructional technologists, training designers, organizational developers, and various human resource specialists. Using the principles of HPT can help the nuclear industry successfully meet ever-changing environmental and business demands

Individual Dosimetry for High Energy Radiation Fields

International Nuclear Information System (INIS)

Spurny, F.

1999-01-01

The exposure of individuals on board aircraft increased interest in individual dosimetry in high energy radiation fields. These fields, both in the case of cosmic rays as primary radiation and at high energy particle accelerators are complex, with a large diversity of particle types, their energies, and linear energy transfer (LET). Several already existing individual dosemeters have been tested in such fields. For the component with high LET (mostly neutrons) etched track detectors were tested with and without fissile radiators, nuclear emulsions, bubble detectors for both types available and an albedo dosemeter. Individual dosimetry for the low LET component has been performed with thermoluminescent detectors (TLDs), photographic film dosemeters and two types of electronic individual dosemeters. It was found that individual dosimetry for the low LET component was satisfactory with the dosemeters tested. As far as the high LET component is concerned, there are problems with both the sensitivity and the energy response. (author)

Minimal performances of high Tc wires for cost effective SMES compared with low Tc's

International Nuclear Information System (INIS)

Levillain, C.; Therond, P.G.

1996-01-01

On the basis of a 22MJ/10MVA unit without stray field, the authors determine minimal performances for High T c Superconducting (HTS) wires, in order to obtain HTS Superconducting Magnetic Energy Storage (SMES) competitive compared with Low T c Superconducting (LTS) ones. The cost equation mainly considers the wire volume, the fabrication process and losses. They then recommend HTS critical current densities and operating magnetic fields close to the present state of the art for short samples. A 30% gain for HTS SMES compared with LTS one could be expected

Microchip Electrophoresis at Elevated Temperatures and High Separation Field Strengths

Science.gov (United States)

Mitra, Indranil; Marczak, Steven P.; Jacobson, Stephen C.

2014-01-01

We report free-solution microchip electrophoresis performed at elevated temperatures and high separation field strengths. We used microfluidic devices with 11-cm long separation channels to conduct separations at temperatures between 22 (ambient) and 45 °C and field strengths from 100 to 1000 V/cm. To evaluate separation performance, N-glycans were used as a model system and labeled with 8-aminopyrene-1,3,6-trisulfonic acid to impart charge for electrophoresis and render them fluorescent. Typically, increased diffusivity at higher temperatures leads to increased axial dispersion and poor separation performance; however, we demonstrate that sufficiently high separation field strengths can be used to offset the impact of increased diffusivity in order to maintain separation efficiency. Efficiencies for these free-solution separations are the same at temperatures of 25, 35, and 45 °C with separation field strengths ≥500 V/cm. PMID:24114979

Performance enhancement of high-field asymmetric waveform ion mobility spectrometry by applying differential-RF-driven operation mode.

Science.gov (United States)

Zeng, Yue; Tang, Fei; Zhai, Yadong; Wang, Xiaohao

2017-09-01

The traditional operation mode of high-field Asymmetric Waveform Ion Mobility Spectrometry (FAIMS) uses a one-way radio frequency (RF) voltage input as the dispersion voltage. This requires a high voltage input and limits power consumption reduction and miniaturization of instruments. With higher dispersion voltages or larger compensation voltages, there also exist problems such as low signal intensity or the fact that the dispersion voltage is no longer much larger than the compensation voltage. In this paper, a differential-RF-driven operation mode of FAIMS is proposed. The two-way RF is used to generate the dispersion field, and a phase difference is added between the two RFs to generate a single step waveform field. Theoretical analysis, and experimental results from an ethanol sample, showed that the peak positions of the ion spectra changed linearly (R 2 = 0.9992) with the phase difference of the two RFs in the differential-RF-driven mode and that the peak intensity of the ion spectrum could be enhanced by more than eight times for ethanol ions. In this way, it is possible to convert the ion spectrum peaks outside the separation or compensation voltage range into a detectable range, by changing the phase difference. To produce the same separation electric field, the high-voltage direct current input voltage can be maximally reduced to half of that in the traditional operation mode. Without changing the drift region size or drift condition, the differential-RF-driven operation mode can reduce power consumption, increase signal-to-noise ratio, extend the application range of the dispersion voltage and compensation voltage, and improve FAIMS detection performance.

Performance and Costs of Ductless Heat Pumps in Marine-Climate High-Performance Homes -- Habitat for Humanity The Woods

Energy Technology Data Exchange (ETDEWEB)

Lubliner, Michael [Building America Partnership for Improved Residential Construction, Olympia, WA (United States). Washington States Univ. Energy Program; Howard, Luke [Building America Partnership for Improved Residential Construction, Olympia, WA (United States). Washington States Univ. Energy Program; Hales, David [Building America Partnership for Improved Residential Construction, Olympia, WA (United States). Washington States Univ. Energy Program; Kunkle, Rick [Building America Partnership for Improved Residential Construction, Olympia, WA (United States). Washington States Univ. Energy Program; Gordon, Andy [Building America Partnership for Improved Residential Construction, Olympia, WA (United States). Washington States Univ. Energy Program; Spencer, Melinda [Building America Partnership for Improved Residential Construction, Olympia, WA (United States). Washington States Univ. Energy Program

2016-02-18

The Woods is a Habitat for Humanity (HFH) community of ENERGY STAR Homes Northwest (ESHNW)-certified homes located in the marine climate of Tacoma/Pierce County, Washington. This research report builds on an earlier preliminary draft 2014 BA report, and includes significant billing analysis and cost effectiveness research from a collaborative, ongoing Ductless Heat Pump (DHP)research effort for Tacoma Public Utilities (TPU) and Bonneville Power Administration (BPA). This report focuses on the results of field testing, modeling, and monitoring of ductless mini-split heat pump hybrid heating systems in seven homes built and first occupied at various times between September 2013 and October 2014. The report also provides WSU documentation of high-performance home observations, lessons learned, and stakeholder recommendations for builders of affordable high-performance housing such as HFH. Tacoma Public Utilities (TPU) and Bonneville Power Administration (BPA). This report focuses on the results of field testing, modeling, and monitoring of ductless mini-split heat pump hybrid heating systems in seven homes built and first occupied at various times between September 2013 and October 2014. The report also provides WSU documentation of high-performance home observations, lessons learned, and stakeholder recommendations for builders of affordable high-performance housing such as HFH.

The influence of distrubing effects on the performance of a wide field coded mask X-ray camera

International Nuclear Information System (INIS)

Sims, M.R.; Turner, M.J.L.; Willingale, R.

1985-01-01

The coded aperture telescope, or Dicke camera, is seen as an instrument suitable for many applications in X-ray and gamma ray imaging. In this paper the effects of a partially obscuring window mask support or collimator, a detector with limited spatial resolution, and motion of the camera during image integration are considered using a computer simulation of the performance of such a camera. Cross correlation and the Wiener filter are used to deconvolve the data. It is shown that while these effects cause a degradation in performance this is in no case catastrophic. Deterioration of the image is shown to be greatest where strong sources are present in the field of view and is quite small (proportional 10%) when diffuse background is the major element. A comparison between the cyclic mask camera and the single mask camera is made under various conditions and it is shown the single mask camera has a moderate advantage particularly when imaging a wide field of view. (orig.)

Fabrication of a vertical channel field effect transistor and a study of its electrical performances

International Nuclear Information System (INIS)

Bhuiyan, A.S.

1983-01-01

A vertical channel field effect transistor on silicon was fabricated by diffusion technique and its electrical characteristics were studied as a function of voltage and temperature. It was found that this transistor has relatively high breakdown voltage of 65 volts for drain source and of 7.5 volts for gate source terminals. (author)

High-field magnetization of dilute rare earths in yttrium

DEFF Research Database (Denmark)

Touborg, P.; Høg, J.; Cock, G. J.

1974-01-01

Magnetization measurements have been performed on single crystals of Y containing small amounts of Tb, Dy, or Er at 4.2 K in fields up to 295 × 105 A/m (370 kOe). Crystal-field and molecular-field parameters obtained from measurements of the initial susceptibility versus temperature give a satisf...... a satisfactory quantitative account of the high-field magnetization. This includes characteristic features due to the crossing and mixing of crystal-field levels....

Effect on High-Intensity Fields of a Tough Hydrophone With Hydrothermal PZT Thick-Film Vibrator and Titanium Front Layer.

Science.gov (United States)

Okada, Nagaya; Takeuchi, Shinichi

2017-07-01

A novel tough hydrophone was fabricated by depositing hydrothermally synthesized lead zirconate titanate polycrystalline film on the back-side surface of a titanium plate. Our developed tough hydrophone resisted damage in a high-pressure field (15 MPa) at a focal point of a sinusoidal continuous wave driven by a concave high-intensity focused ultrasound (HIFU) transducer with up to 50 W of power input to the sound source. The hydrophone was suitable for the HIFU field, even though the hydrophone has a flat-shape tip of 3.5 mm diameter, which is slightly larger than the wavelength of a few megahertz. In this paper, experiments are performed to assess the effect on the HIFU field of changing the shape of the tough hydrophone, with the aim of developing a tough hydrophone. The spatial distribution of the acoustic bubbles around the focal point was visualized by using ultrasonic diagnostic equipment with the tough hydrophone located at the focal point of the HIFU transducer. From the visualization, the trapped acoustic bubbles were seen to arise from the standing wave, which implies that the acoustic pressure is reduced by this cloud of acoustic bubbles that appeared during hydrophone measurement. Although cavitation and acoustic bubbles may be unavoidable when using high-intensity ultrasound, the estimated result of evaluating acoustic fields without misunderstanding by acoustic bubbles can be obtained by the aid of visualizing bubbles around the tough hydrophone.

Motional Stark Effect measurements of the local magnetic field in high temperature fusion plasmas

Science.gov (United States)

Wolf, R. C.; Bock, A.; Ford, O. P.; Reimer, R.; Burckhart, A.; Dinklage, A.; Hobirk, J.; Howard, J.; Reich, M.; Stober, J.

2015-10-01

The utilization of the Motional Stark Effect (MSE) experienced by the neutral hydrogen or deuterium injected into magnetically confined high temperature plasmas is a well established technique to infer the internal magnetic field distribution of fusion experiments. In their rest frame, the neutral atoms experience a Lorentz electric field, EL = v × B, which results in a characteristic line splitting and polarized line emission. The different properties of the Stark multiplet allow inferring, both the magnetic field strength and the orientation of the magnetic field vector. Besides recording the full MSE spectrum, several types of polarimeters have been developed to measure the polarization direction of the Stark line emission. To test physics models of the magnetic field distribution and dynamics, the accuracy requirements are quite demanding. In view of these requirements, the capabilities and issues of the different techniques are discussed, including the influence of the Zeeman Effect and the sensitivity to radial electric fields. A newly developed Imaging MSE system, which has been tested on the ASDEX Upgrade tokamak, is presented. The sensitivity allows to resolve sawtooth oscillations. A shorter version of this contribution is due to be published in PoS at: 1st EPS conference on Plasma Diagnostics

Performance analysis of InSb based QWFET for ultra high speed applications

International Nuclear Information System (INIS)

Subash, T. D.; Gnanasekaran, T.; Divya, C.

2015-01-01

An indium antimonide based QWFET (quantum well field effect transistor) with the gate length down to 50 nm has been designed and investigated for the first time for L-band radar applications at 230 GHz. QWFETs are designed at the high performance node of the International Technology Road Map for Semiconductors (ITRS) requirements of drive current (Semiconductor Industry Association 2010). The performance of the device is investigated using the SYNOPSYS CAD (TCAD) software. InSb based QWFET could be a promising device technology for very low power and ultra-high speed performance with 5–10 times low DC power dissipation. (semiconductor devices)

A study on impulsive sound attenuation for a high-pressure blast flow field

International Nuclear Information System (INIS)

Kang, Kuk Jeong; Ko, Sung Ho; Lee, Dong Soo

2008-01-01

The present work addresses a numerical study on impulsive sound attenuation for a complex high-pressure blast flow field; these characteristics are generated by a supersonic propellant gas flow through a shock tube into an ambient environment. A numerical solver for analyzing the high pressure blast flow field is developed in this study. From numerical simulations, wave dynamic processes (which include a first precursor shock wave, a second main propellant shock wave, and interactions in the muzzle blasts) are simulated and discussed. The pressure variation of the blast flow field is analyzed to evaluate the effect of a silencer. A live firing test is also performed to evaluate four different silencers. The results of this study will be helpful in understanding blast wave and in designing silencers

A study on impulsive sound attenuation for a high-pressure blast flow field

Energy Technology Data Exchange (ETDEWEB)

Kang, Kuk Jeong [Agency for Defence Development, Daejeon (Korea, Republic of); Ko, Sung Ho; Lee, Dong Soo [Chungnam National University, Daejeon (Korea, Republic of)

2008-01-15

The present work addresses a numerical study on impulsive sound attenuation for a complex high-pressure blast flow field; these characteristics are generated by a supersonic propellant gas flow through a shock tube into an ambient environment. A numerical solver for analyzing the high pressure blast flow field is developed in this study. From numerical simulations, wave dynamic processes (which include a first precursor shock wave, a second main propellant shock wave, and interactions in the muzzle blasts) are simulated and discussed. The pressure variation of the blast flow field is analyzed to evaluate the effect of a silencer. A live firing test is also performed to evaluate four different silencers. The results of this study will be helpful in understanding blast wave and in designing silencers

High mobility organic field-effect transistor based on water-soluble deoxyribonucleic acid via spray coating

Energy Technology Data Exchange (ETDEWEB)

Shi, Wei; Han, Shijiao; Huang, Wei; Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

2015-01-26

High mobility organic field-effect transistors (OFETs) by inserting water-soluble deoxyribonucleic acid (DNA) buffer layer between electrodes and pentacene film through spray coating process were fabricated. Compared with the OFETs incorporated with DNA in the conventional organic solvents of ethanol and methanol: water mixture, the water-soluble DNA based OFET exhibited an over four folds enhancement of field-effect mobility from 0.035 to 0.153 cm{sup 2}/Vs. By characterizing the surface morphology and the crystalline structure of pentacene active layer through atomic force microscope and X-ray diffraction, it was found that the adoption of water solvent in DNA solution, which played a key role in enhancing the field-effect mobility, was ascribed to both the elimination of the irreversible organic solvent-induced bulk-like phase transition of pentacene film and the diminution of a majority of charge trapping at interfaces in OFETs.

High-temperature performance of the brazement of molybdenum single crystals

International Nuclear Information System (INIS)

Hirakoa, Y.

1992-01-01

Molybdenum is utilized in the fields of high-temperature vacuum industry, electrical and electronic industry, and chemical industries. For the wider application of this material, however, it is necessary to obtain a joining with good quality. In this investigation, high-temperature brazing of a single-crystalline molybdenum was performed. Then the bend properties of the brazement after a high-temperature annealing were evaluated. The single-crystalline molybdenum had been produced by the secondary recrystallization method. Brazing was performed in vacuum at 2273K using Mo-40Ru alloy powder as a brazing material. The brazement was investigated via optical microscopy, EPMA, Knoop hardness, and three point bending. In this paper the effects of annealing in hydrogen and vacuum are discussed

Autophagy Is a Promoter for Aerobic Exercise Performance during High Altitude Training

Directory of Open Access Journals (Sweden)

Ying Zhang

2018-01-01

Full Text Available High altitude training is one of the effective strategies for improving aerobic exercise performance at sea level via altitude acclimatization, thereby improving oxygen transport and/or utilization. But its underlying molecular mechanisms on physiological functions and exercise performance of athletes are still vague. More recent evidence suggests that the recycling of cellular components by autophagy is an important process of the body involved in the adaptive responses to exercise. Whether high altitude training can activate autophagy or whether high altitude training can improve exercise performance through exercise-induced autophagy is still unclear. In this narrative review article, we will summarize current research advances in the improvement of exercise performance through high altitude training and its reasonable molecular mechanisms associated with autophagy, which will provide a new field to explore the molecular mechanisms of adaptive response to high altitude training.

Electron density window for best frequency performance, lowest phase noise and slowest degradation of GaN heterostructure field-effect transistors

International Nuclear Information System (INIS)

Matulionis, Arvydas

2013-01-01

The problems in the realm of nitride heterostructure field-effect transistors (HFETs) are discussed in terms of a novel fluctuation–dissipation-based approach impelled by a recent demonstration of strong correlation of hot-electron fluctuations with frequency performance and degradation of the devices. The correlation has its genesis in the dissipation of the LO-mode heat accumulated by the non-equilibrium longitudinal optical phonons (hot phonons) confined in the channel that hosts the high-density hot-electron gas subjected to a high electric field. The LO-mode heat causes additional scattering of hot electrons and facilitates defect formation in a different manner than the conventional heat contained mainly in the acoustic phonon mode. We treat the heat dissipation problem in terms of the hot-phonon lifetime responsible for the conversion of the non-migrant hot phonons into migrant acoustic modes and other vibrations. The lifetime is measured over a wide range of electron density and supplied electric power. The optimal conditions for the dissipation of the LO-mode heat are associated with the plasmon-assisted disintegration of hot phonons. Signatures of plasmons are experimentally resolved in fluctuations, dissipation, hot-electron transport, transistor frequency performance, transistor phase noise and transistor reliability. In particular, a slower degradation and a faster operation of GaN-based HFETs take place inside the electron density window where the resonant plasmon-assisted ultrafast dissipation of the LO-mode heat comes into play. A novel heterostructure design for the possible improvement of HFET performance is proposed, implemented and tested. (invited review)

The effect of subconscious performance goals on academic performance

NARCIS (Netherlands)

Bipp, T.; Kleingeld, P.A.M.; van Mierlo, H.; Kunde, W.

2017-01-01

We investigated the impact of subconscious goals on academic performance in two field experiments. We show that unobtrusive priming of goals with regard to achievement motivation by means of a photograph improves performance in different educational contexts. High-school students who were exposed to

Performance simulation of a three-dimensional nanoscale field-effect diode

International Nuclear Information System (INIS)

Gatabi, Iman Rezanejad; Raissi, Farshid

2011-01-01

The modified field effect diode (FED) can provide orders of magnitude larger ratio compared to regular MOSFETs at sub-100 nm channel lengths. However, fabrication of the modified FED requires implantation of very thin and highly doped n- and p-type regions on top of each other, which is a major practical problem to overcome. An improved sub-100 nm channel length 3D configuration of the FED is proposed and simulated using Silvaco TCAD software. Fabrication of this configuration is compatible with a regular CMOS process while providing a larger I ON /I OFF ratio. The current–voltage (I–V) characteristics of this structure is obtained and compared with that of a semiconductor-on-insulator MOSFET (SOI-MOSFET) with the same dimensions numerically. Simulation results indicate that the I ON /I OFF ratio of the 3D FED is five orders of magnitude larger than that of the comparable SOI-MOSFET

Lessons Learned from Field Evaluation of Six High-Performance Buildings: Preprint

Energy Technology Data Exchange (ETDEWEB)

Torcellini, P.; Deru, M.; Griffith, B.; Long, N.; Pless, S.; Judkoff, R.; Crawley, D. B.

2004-07-01

The energy performance of six high-performance buildings around the United States was monitored in detail. The six buildings include the Visitor Center at Zion National Park; the National Renewable Energy Laboratory's Thermal Test Facility; the Chesapeake Bay Foundation's Merrill Center; The BigHorn Home Improvement Center; the Cambria DEP Office Building; and the Oberlin College Lewis Center. This paper discusses the design energy targets and actual performance.

Recent developments at the high-field laboratory of Tohoku University

International Nuclear Information System (INIS)

Motokawa, M.; Watanabe, K.; Miura, S.; Awaji, S.; Nojiri, H.; Mogi, I.; Mitsudo, S.; Sakon, T.

1998-01-01

Recent developments and experiments performed at the high-field laboratory of Tohoku University are described. We have (1) hybrid magnets which produce high fields up to 31.1 T, (2) liquid-helium-free superconducting magnets up to 11 T which are available continuously for more than a year, (3) a 20 T superconducting magnet, (4) pulsed field magnets up to 40 T by a 100 kJ bank and (5) repeating pulsed field systems up to 25 T, synchronized with a pulsed neutron source

Electrical resistivity of UBe13 in high magnetic fields

International Nuclear Information System (INIS)

Schmiedeshoff, G.M.; Lacerda, A.; Fisk, Z.; Smith, J.L.

1996-01-01

We have measured the temperature dependent electrical resistivity of single and polycrystal samples of UBe 13 in high magnetic fields. Two maxima in the resistivity are observed at T M1 and T M2 . T M1 , the temperature of the colder maximum, increases quadratically with magnetic field H, a field dependence previously observed under hydrostatic pressure. The high temperature maximum at T M2 emerges in fields above about 4 T and increases linearly with H, a behavior which may be due to a sharpening of the crystal field levels associated with a depression of the Kondo effect by high magnetic fields. copyright 1996 The American Physical Society

Progress in a novel architecture for high performance processing

Science.gov (United States)

Zhang, Zhiwei; Liu, Meng; Liu, Zijun; Du, Xueliang; Xie, Shaolin; Ma, Hong; Ding, Guangxin; Ren, Weili; Zhou, Fabiao; Sun, Wenqin; Wang, Huijuan; Wang, Donglin

2018-04-01

The high performance processing (HPP) is an innovative architecture which targets on high performance computing with excellent power efficiency and computing performance. It is suitable for data intensive applications like supercomputing, machine learning and wireless communication. An example chip with four application-specific integrated circuit (ASIC) cores which is the first generation of HPP cores has been taped out successfully under Taiwan Semiconductor Manufacturing Company (TSMC) 40 nm low power process. The innovative architecture shows great energy efficiency over the traditional central processing unit (CPU) and general-purpose computing on graphics processing units (GPGPU). Compared with MaPU, HPP has made great improvement in architecture. The chip with 32 HPP cores is being developed under TSMC 16 nm field effect transistor (FFC) technology process and is planed to use commercially. The peak performance of this chip can reach 4.3 teraFLOPS (TFLOPS) and its power efficiency is up to 89.5 gigaFLOPS per watt (GFLOPS/W).

Effects of anesthetic agents on brain blood oxygenation level revealed with ultra-high field MRI.

Directory of Open Access Journals (Sweden)

Luisa Ciobanu

Full Text Available During general anesthesia it is crucial to control systemic hemodynamics and oxygenation levels. However, anesthetic agents can affect cerebral hemodynamics and metabolism in a drug-dependent manner, while systemic hemodynamics is stable. Brain-wide monitoring of this effect remains highly challenging. Because T(2*-weighted imaging at ultra-high magnetic field strengths benefits from a dramatic increase in contrast to noise ratio, we hypothesized that it could monitor anesthesia effects on brain blood oxygenation. We scanned rat brains at 7T and 17.2T under general anesthesia using different anesthetics (isoflurane, ketamine-xylazine, medetomidine. We showed that the brain/vessels contrast in T(2*-weighted images at 17.2T varied directly according to the applied pharmacological anesthetic agent, a phenomenon that was visible, but to a much smaller extent at 7T. This variation is in agreement with the mechanism of action of these agents. These data demonstrate that preclinical ultra-high field MRI can monitor the effects of a given drug on brain blood oxygenation level in the absence of systemic blood oxygenation changes and of any neural stimulation.

Information Fields Navigation with Piece-Wise Polynomial Approximation for High-Performance OFDM in WSNs

Directory of Open Access Journals (Sweden)

Wei Wei

2013-01-01

Full Text Available Since Wireless sensor networks (WSNs are dramatically being arranged in mission-critical applications,it changes into necessary that we consider application requirements in Internet of Things. We try to use WSNs to assist information query and navigation within a practical parking spaces environment. Integrated with high-performance OFDM by piece-wise polynomial approximation, we present a new method that is based on a diffusion equation and a position equation to accomplish the navigation process conveniently and efficiently. From the point of view of theoretical analysis, our jobs hold the lower constraint condition and several inappropriate navigation can be amended. Information diffusion and potential field are introduced to reach the goal of accurate navigation and gradient descent method is applied in the algorithm. Formula derivations and simulations manifest that the method facilitates the solution of typical sensor network configuration information navigation. Concurrently, we also treat channel estimation and ICI mitigation for very high mobility OFDM systems, and the communication is between a BS and mobile target at a terrible scenario. The scheme proposed here combines the piece-wise polynomial expansion to approximate timevariations of multipath channels. Two near symbols are applied to estimate the first-and second-order parameters. So as to improve the estimation accuracy and mitigate the ICI caused by pilot-aided estimation, the multipath channel parameters were reestimated in timedomain employing the decided OFDM symbol. Simulation results show that this method would improve system performance in a complex environment.

High speed pulsed magnetic fields measurements, using the Faraday effect

International Nuclear Information System (INIS)

Dillet, A.

1964-12-01

For these measures, the information used is the light polarization plane rotation induced by the magnetic field in a glass probe. This rotation is detected using a polarizer-analyzer couple. The detector is a photomultiplier used with high-current and pulsed light. In a distributed magnet (gap: 6 x 3 x 3 cm) magnetic fields to measure are 300 gauss, lasting 0.1 μs, with rise times ≤ 35 ns, repetition rate: 1/s. An oscilloscope is used to view the magnetic field from the P.M. plate signal. The value of the field is computed from a previous static calibration. Magnetic fields from 50 to 2000 gauss (with the probe now used) can be measured to about 20 gauss ± 5 per cent, with a frequency range of 30 MHz. (author) [fr

Tin - an unlikely ally for silicon field effect transistors?

KAUST Repository

Hussain, Aftab M.

2014-01-13

We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental Studies of W-Band Accelerator Structures at High Field

Energy Technology Data Exchange (ETDEWEB)

Hill, Marc E

2001-02-09

A high-gradient electron accelerator is desired for high-energy physics research, where frequency scalings of breakdown and trapping of itinerant beamline particles dictates operation of the accelerator at short wavelengths. The first results of design and test of a high-gradient mm-wave linac with an operating frequency at 91.392 GHz (W-band) are presented. A novel approach to particle acceleration is presented employing a planar, dielectric lined waveguide used for particle acceleration. The traveling wave fields in the planar dielectric accelerator (PDA) are analyzed for an idealized structure, along with a circuit equivalent model used for understanding the structure as a microwave circuit. Along with the W-band accelerator structures, other components designed and tested are high power rf windows, high power attenuators, and a high power squeeze-type phase shifter. The design of the accelerator and its components where eased with the aide of numerical simulations using a finite-difference electromagnetic field solver. Manufacturing considerations of the small, delicate mm-wave components and the steps taken to reach a robust fabrication process are detailed. These devices were characterized under low power using a two-port vector network analyzer to verify tune and match, including measurements of the structures' fields using a bead-pull. The measurements are compared with theory throughout. Addition studies of the W-band structures were performed under high power utilizing a 11.424 GHz electron linac as a current source. Test results include W-band power levels of 200 kW, corresponding to fields in the PDA of over 20 MV/m, a higher gradient than any collider. Planar accelerator devices naturally have an rf quadrupole component of the accelerating field. Presented for the first time are the measurements of this effect.

Effects of high-field-strength MR imaging on the microcirculation in patients with sickle cell anemia

International Nuclear Information System (INIS)

Effmann, E.L.; Podolak, M.; Kinney, T.; Hedlund, L.

1987-01-01

Since deoxygenated sickled erythrocytes in vitro align in magnetic fields, the safety of MR imaging of patients with sickle cell anemia is questionable. To determine possible effects of high magnetic fields on blood flow in vivo, the authors used laser Doppler velocimetry to measure capillary blood flow from the forearm of five patients and three control subjects during exposure to a 1.5-T field. They found no significant differences (P<.15) between cutaneous blood flow measured outside and inside the magnet bore in either controls or patients not in crisis. While their results do not preclude the presence of effects in other capillary systems in sickle cell anemia patients in crisis, they do suggest that exposure to a 1.5-T field does not produce detectable flow changes in one microcirculatory bed

Interface Engineering and Gate Dielectric Engineering for High Performance Ge MOSFETs

Directory of Open Access Journals (Sweden)

Jiabao Sun

2015-01-01

Full Text Available In recent years, germanium has attracted intensive interests for its promising applications in the microelectronics industry. However, to achieve high performance Ge channel devices, several critical issues still have to be addressed. Amongst them, a high quality gate stack, that is, a low defect interface layer and a dielectric layer, is of crucial importance. In this work, we first review the existing methods of interface engineering and gate dielectric engineering and then in more detail we discuss and compare three promising approaches (i.e., plasma postoxidation, high pressure oxidation, and ozone postoxidation. It has been confirmed that these approaches all can significantly improve the overall performance of the metal-oxide-semiconductor field effect transistor (MOSFET device.

Amorphous Zinc Oxide Integrated Wavy Channel Thin Film Transistor Based High Performance Digital Circuits

KAUST Repository

Hanna, Amir

2015-12-04

High performance thin film transistor (TFT) can be a great driving force for display, sensor/actuator, integrated electronics, and distributed computation for Internet of Everything applications. While semiconducting oxides like zinc oxide (ZnO) present promising opportunity in that regard, still wide area of improvement exists to increase the performance further. Here, we show a wavy channel (WC) architecture for ZnO integrated TFT which increases transistor width without chip area penalty, enabling high performance in material agnostic way. We further demonstrate digital logic NAND circuit using the WC architecture and compare it to the conventional planar architecture. The WC architecture circuits have shown 2× higher peak-to-peak output voltage for the same input voltage. They also have 3× lower high-to-low propagation delay times, respectively, when compared to the planar architecture. The performance enhancement is attributed to both extra device width and enhanced field effect mobility due to higher gate field electrostatics control.

Study of HTS Wires at High Magnetic Fields

Energy Technology Data Exchange (ETDEWEB)

Turrioni, D.; Barzi, E.; Lamm, M.J.; Yamada, R.; Zlobin, A.V.; Kikuchi, A.; /Fermilab

2009-01-01

Fermilab is working on the development of high field magnet systems for ionization cooling of muon beams. The use of high temperature superconducting (HTS) materials is being considered for these magnets using Helium refrigeration. Critical current (I{sub c}) measurements of HTS conductors were performed at FNAL and at NIMS up to 28 T under magnetic fields at zero to 90 degree with respect to the sample face. A description of the test setups and results on a BSCCO-2223 tape and second generation (2G) coated conductors are presented.

The Effect of Subconscious Performance Goals on Academic Performance

Science.gov (United States)

Bipp, Tanja; Kleingeld, Ad; van Mierlo, Heleen; Kunde, Wilfried

2017-01-01

We investigated the impact of subconscious goals on academic performance in two field experiments. We show that unobtrusive priming of goals with regard to achievement motivation by means of a photograph improves performance in different educational contexts. High-school students who were exposed to an achievement-related photograph achieved…

Enhanced performance of C60 organic field effect transistors using a tris(8-hydroxyquinoline) aluminum buffer layer

Energy Technology Data Exchange (ETDEWEB)

Zheng Hong; Cheng Xiaoman; Tian Haijun [Institute of Material Physics, Key Laboratory of Display Material and Photoelectric Devices, Ministry of Education, Tianjin University of Technology, Tianjin 300384 (China); Zhao Geng, E-mail: zheng_033@163.com [School of Science, Tianjin University of Technology, Tianjin 300384 (China)

2011-09-15

We have investigated the properties of C60-based organic field effect transistors (OFETs) with a tris(8-hydroxyquinoline) aluminum (Alq3) buffer layer inserted between the source/drain electrodes and the active material. The electrical characteristics of OFETs are improved with the insertion of Alq3 film. The peak field effect mobility is increased to 1.28 x 10{sup -2} cm{sup 2}/(V{center_dot}s) and the threshold voltage is decreased to 10 V when the thickness of the Alq3 is 10 nm. The reason for the improved performance of the devices is probably due to the prevention of metal atoms diffusing into the C60 active layer and the reduction of the channel resistance in Alq3 films. (semiconductor devices)

Dual-stroke heat pump field performance

Science.gov (United States)

Veyo, S. E.

1984-11-01

Two nearly identical proprototype systems, each employing a unique dual-stroke compressor, were built and tested. One was installed in an occupied residence in Jeannette, Pa. It has provided the heating and cooling required from that time to the present. The system has functioned without failure of any prototypical advanced components, although early field experience did suffer from deficiencies in the software for the breadboard micro processor control system. Analysis of field performance data indicates a heating performance factor (HSPF) of 8.13 Stu/Wa, and a cooling energy efficiency (SEER) of 8.35 Scu/Wh. Data indicate that the beat pump is oversized for the test house since the observed lower balance point is 3 F whereas 17 F La optimum. Oversizing coupled with the use of resistance heat ot maintain delivered air temperature warmer than 90 F results in the consumption of more resistance heat than expected, more unit cycling, and therefore lower than expected energy efficiency. Our analysis indicates that with optimal mixing the dual stroke heat pump will yield as HSFF 30% better than a single capacity heat pump representative of high efficiency units in the market place today for the observed weather profile.

Magnetic fields and childhood cancer: an epidemiological investigation of the effects of high-voltage underground cables

International Nuclear Information System (INIS)

Bunch, K J; Vincent, T J; Murphy, M F G; Swanson, J

2015-01-01

Epidemiological evidence of increased risks for childhood leukaemia from magnetic fields has implicated, as one source of such fields, high-voltage overhead lines. Magnetic fields are not the only factor that varies in their vicinity, complicating interpretation of any associations. Underground cables (UGCs), however, produce magnetic fields but have no other discernible effects in their vicinity. We report here the largest ever epidemiological study of high voltage UGCs, based on 52 525 cases occurring from 1962–2008, with matched birth controls. We calculated the distance of the mother’s address at child’s birth to the closest 275 or 400 kV ac or high-voltage dc UGC in England and Wales and the resulting magnetic fields. Few people are exposed to magnetic fields from UGCs limiting the statistical power. We found no indications of an association of risk with distance or of trend in risk with increasing magnetic field for leukaemia, and no convincing pattern of risks for any other cancer. Trend estimates for leukaemia as shown by the odds ratio (and 95% confidence interval) per unit increase in exposure were: reciprocal of distance 0.99 (0.95–1.03), magnetic field 1.01 (0.76–1.33). The absence of risk detected in relation to UGCs tends to add to the argument that any risks from overhead lines may not be caused by magnetic fields. (paper)

Amplification of the radiobiological effect by a high-frequency electromagnetic field

Energy Technology Data Exchange (ETDEWEB)

Terlecki, J; Kwiatkowski, B [Akademia Medyczna, Gdansk (Poland)

1981-01-01

Preliminary results have been reported of a study on the effect of the 27-MHz electromagnetic field combined with /sup -/irradiation (/sup 60/Co source) on the Vi 3 phages in temperature range below the temperature of thermal inactivation. Under the effect of an external field of about 4x10/sup 3/ V m/sup -1/ and ..gamma..-radiation dose of about 20 J kg/sup -1/, the survival rate of the phages decreased more than twice as compared with that in the absence of the field.

Investigations into the locomotor activity of white rats under the effect of 50 Hz high voltage fields

Energy Technology Data Exchange (ETDEWEB)

Hilmer, H.; Tembrock, G.

1970-07-01

Tests were carried out on white rats to determine the effect of high-voltage 50 Hz ac electric fields on their locomotor activity. Short-term tests showed that, when they were able to choose between a box not subjected to a field (or subjected to a light field) and one exposed to the field, they stayed for only 27% of the time in the "field box". In the long-term tests, when exposed to the field for three hours, the principal activity peak which occurred during the last hour of the test period was shifted by one hour. Exposure to the field resulted in a change in the ratio between activity during darkness and that during periods of light. It seems probable that this ratio, as well as the daily activity pattern, will be subject to certain afer-effects of an exposure to the field lasting several weeks. 13 refs., 2 figs.

Graphene Field Effect Transistor-Based Detectors for Detection of Ionizing Radiation

International Nuclear Information System (INIS)

Jovanovic, Igor; Cazalas, Edward; Childres, I.; Patil, A.; Koybasi, O.; Chen, Y-P.

2013-06-01

We present the results of our recent efforts to develop novel ionizing radiation sensors based on the nano-material graphene. Graphene used in the field effect transistor architecture could be employed to detect the radiation-induced charge carriers produced in undoped semiconductor absorber substrates, even without the need for charge collection. The detection principle is based on the high sensitivity of graphene to ionization-induced local electric field perturbations in the electrically biased substrate. We experimentally demonstrated promising performance of graphene field effect transistors for detection of visible light, X-rays, gamma-rays, and alpha particles. We propose improved detector architectures which could result in a significant improvement of speed necessary for pulsed mode operation. (authors)

Molecular materials for organic field-effect transistors

International Nuclear Information System (INIS)

Mori, T

2008-01-01

Organic field-effect transistors are important applications of thin films of molecular materials. A variety of materials have been explored for improving the performance of organic transistors. The materials are conventionally classified as p-channel and n-channel, but not only the performance but also even the carrier polarity is greatly dependent on the combinations of organic semiconductors and electrode materials. In this review, particular emphasis is laid on multi-sulfur compounds such as tetrathiafulvalenes and metal dithiolates. These compounds are components of highly conducting materials such as organic superconductors, but are also used in organic transistors. The charge-transfer complexes are used in organic transistors as active layers as well as electrodes. (topical review)

Hybrid nanostructured materials for high-performance electrochemical capacitors

KAUST Repository

Yu, Guihua

2013-03-01

The exciting development of advanced nanostructured materials has driven the rapid growth of research in the field of electrochemical energy storage (EES) systems which are critical to a variety of applications ranging from portable consumer electronics, hybrid electric vehicles, to large industrial scale power and energy management. Owing to their capability to deliver high power performance and extremely long cycle life, electrochemical capacitors (ECs), one of the key EES systems, have attracted increasing attention in the recent years since they can complement or even replace batteries in the energy storage field, especially when high power delivery or uptake is needed. This review article describes the most recent progress in the development of nanostructured electrode materials for EC technology, with a particular focus on hybrid nanostructured materials that combine carbon based materials with pseudocapacitive metal oxides or conducting polymers for achieving high-performance ECs. This review starts with an overview of EES technologies and the comparison between various EES systems, followed by a brief description of energy storage mechanisms for different types of EC materials. This review emphasizes the exciting development of both hybrid nanomaterials and novel support structures for effective electrochemical utilization and high mass loading of active electrode materials, both of which have brought the energy density of ECs closer to that of batteries while still maintaining their characteristic high power density. Last, future research directions and the remaining challenges toward the rational design and synthesis of hybrid nanostructured electrode materials for next-generation ECs are discussed. © 2012 Elsevier Ltd.

Bias-stress characterization of solution-processed organic field-effect transistor based on highly ordered liquid crystals

Science.gov (United States)

Kunii, M.; Iino, H.; Hanna, J.

2017-06-01

Bias-stress effects in solution-processed, 2-decyl-7-phenyl-[1]benzothieno[3,2-b][1]benzothiophene (Ph-BTBT-10) field effect transistors (FETs) are studied under negative and positive direct current bias. The bottom gate, bottom contact polycrystalline Ph-BTBT-10 FET with a hybrid gate dielectric of polystyrene and SiO2 shows high field effect mobility as well as a steep subthreshold slope when fabricated with a highly ordered smectic E liquid crystalline (SmE) film as a precursor. Negative gate bias-stress causes negative threshold voltage shift (ΔVth) for Ph-BTBT-10 FET in ambient air, but ΔVth rapidly decreases as the gate bias decreases and approaches to near zero when the gate bias goes down to 9 V in amplitude. In contrast, positive gate bias-stress causes negligible ΔVth even with a relatively high bias voltage. These results conclude that Ph-BTBT-10 FET has excellent bias-stress stability in ambient air in the range of low to moderate operating voltages.

High performance computing on vector systems

CERN Document Server

Roller, Sabine

2008-01-01

Presents the developments in high-performance computing and simulation on modern supercomputer architectures. This book covers trends in hardware and software development in general and specifically the vector-based systems and heterogeneous architectures. It presents innovative fields like coupled multi-physics or multi-scale simulations.

Generalized reduced rank latent factor regression for high dimensional tensor fields, and neuroimaging-genetic applications.

Science.gov (United States)

Tao, Chenyang; Nichols, Thomas E; Hua, Xue; Ching, Christopher R K; Rolls, Edmund T; Thompson, Paul M; Feng, Jianfeng

2017-01-01

We propose a generalized reduced rank latent factor regression model (GRRLF) for the analysis of tensor field responses and high dimensional covariates. The model is motivated by the need from imaging-genetic studies to identify genetic variants that are associated with brain imaging phenotypes, often in the form of high dimensional tensor fields. GRRLF identifies from the structure in the data the effective dimensionality of the data, and then jointly performs dimension reduction of the covariates, dynamic identification of latent factors, and nonparametric estimation of both covariate and latent response fields. After accounting for the latent and covariate effects, GRLLF performs a nonparametric test on the remaining factor of interest. GRRLF provides a better factorization of the signals compared with common solutions, and is less susceptible to overfitting because it exploits the effective dimensionality. The generality and the flexibility of GRRLF also allow various statistical models to be handled in a unified framework and solutions can be efficiently computed. Within the field of neuroimaging, it improves the sensitivity for weak signals and is a promising alternative to existing approaches. The operation of the framework is demonstrated with both synthetic datasets and a real-world neuroimaging example in which the effects of a set of genes on the structure of the brain at the voxel level were measured, and the results compared favorably with those from existing approaches. Copyright © 2016. Published by Elsevier Inc.

Updated tokamak systems code and applications to high-field ignition devices

International Nuclear Information System (INIS)

Reid, R.L.; Galambos, J.D.; Peng, Y-K.M.; Strickler, D.J.; Selcow, E.C.

1985-01-01

This paper describes revisions made to the Tokamak Systems Code to more accurately model high-field copper ignition devices. The major areas of revision were in the plasma physics model, the toroidal field (TF) coil model, and the poloidal field (PF) coil/MHD model. Also included in this paper are results obtained from applying the revised code to a study for a high-field copper ignition device to determine the impact of magnetic field on axis, (at the major radius), on performance, and on cost

High field Q slope and the effect of low-temperature baking at 3 GHz

Science.gov (United States)

Ciovati, G.; Eremeev, G.; Hannon, F.

2018-01-01

A strong degradation of the unloaded quality factor with field, called high field Q slope, is commonly observed above Bp ≅100 mT in elliptical superconducting niobium cavities at 1.3 and 1.5 GHz. In the present experiments several 3 GHz niobium cavities were measured up to and above Bp ≅100 mT . The measurements show that a high field Q slope phenomenon limits the field reach at this frequency, that the high field Q slope onset field depends weakly on the frequency, and that the high field Q slope can be removed by the typical empirical solution of electropolishing followed by heating to 120°C for 48 hrs. In addition, one of the cavities reached a quench field of 174 mT and its field dependence of the quality factor was compared against global heating predicted by a thermal feedback model.

Magnetic field effects in proteins

Science.gov (United States)

Jones, Alex R.

2016-06-01

Many animals can sense the geomagnetic field, which appears to aid in behaviours such as migration. The influence of man-made magnetic fields on biology, however, is potentially more sinister, with adverse health effects being claimed from exposure to fields from mobile phones or high voltage power lines. Do these phenomena have a common, biophysical origin, and is it even plausible that such weak fields can profoundly impact noisy biological systems? Radical pair intermediates are widespread in protein reaction mechanisms, and the radical pair mechanism has risen to prominence as perhaps the most plausible means by which even very weak fields might impact biology. In this New Views article, I will discuss the literature over the past 40 years that has investigated the topic of magnetic field effects in proteins. The lack of reproducible results has cast a shadow over the area. However, magnetic field and spin effects have proven to be useful mechanistic tools for radical mechanism in biology. Moreover, if a magnetic effect on a radical pair mechanism in a protein were to influence a biological system, the conditions necessary for it to do so appear increasing unlikely to have come about by chance.

Effects of a Short-Term High-Nitrate Diet on Exercise Performance

Directory of Open Access Journals (Sweden)

Simone Porcelli

2016-08-01

Full Text Available It has been reported that nitrate supplementation can improve exercise performance. Most of the studies have used either beetroot juice or sodium nitrate as a supplement; there is lack of data on the potential ergogenic benefits of an increased dietary nitrate intake from a diet based on fruits and vegetables. Our aim was to assess whether a high-nitrate diet increases nitric oxide bioavailability and to evaluate the effects of this nutritional intervention on exercise performance. Seven healthy male subjects participated in a randomized cross-over study. They were tested before and after 6 days of a high (HND or control (CD nitrate diet (~8.2 mmol∙day−1 or ~2.9 mmol∙day−1, respectively. Plasma nitrate and nitrite concentrations were significantly higher in HND (127 ± 64 µM and 350 ± 120 nM, respectively compared to CD (23 ± 10 µM and 240 ± 100 nM, respectively. In HND (vs. CD were observed: (a a significant reduction of oxygen consumption during moderate-intensity constant work-rate cycling exercise (1.178 ± 0.141 vs. 1.269 ± 0.136 L·min−1; (b a significantly higher total muscle work during fatiguing, intermittent sub-maximal isometric knee extension (357.3 ± 176.1 vs. 253.6 ± 149.0 Nm·s·kg−1; (c an improved performance in Repeated Sprint Ability test. These findings suggest that a high-nitrate diet could be a feasible and effective strategy to improve exercise performance.

Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors

Energy Technology Data Exchange (ETDEWEB)

Held, Martin; Schießl, Stefan P.; Gannott, Florentina [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany); Miehler, Dominik [Department of Materials Science and Engineering, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen D-91058 (Germany); Zaumseil, Jana, E-mail: zaumseil@uni-heidelberg.de [Institute for Physical Chemistry, Universität Heidelberg, Heidelberg D-69120 (Germany)

2015-08-24

Transistors for future flexible organic light-emitting diode (OLED) display backplanes should operate at low voltages and be able to sustain high currents over long times without degradation. Hence, high capacitance dielectrics with low surface trap densities are required that are compatible with solution-processable high-mobility semiconductors. Here, we combine poly(methyl methacrylate) (PMMA) and atomic layer deposition hafnium oxide (HfO{sub x}) into a bilayer hybrid dielectric for field-effect transistors with a donor-acceptor polymer (DPPT-TT) or single-walled carbon nanotubes (SWNTs) as the semiconductor and demonstrate substantially improved device performances for both. The ultra-thin PMMA layer ensures a low density of trap states at the semiconductor-dielectric interface while the metal oxide layer provides high capacitance, low gate leakage and superior barrier properties. Transistors with these thin (≤70 nm), high capacitance (100–300 nF/cm{sup 2}) hybrid dielectrics enable low operating voltages (<5 V), balanced charge carrier mobilities and low threshold voltages. Moreover, the hybrid layers substantially improve the bias stress stability of the transistors compared to those with pure PMMA and HfO{sub x} dielectrics.

High Performance Computing in Science and Engineering '02 : Transactions of the High Performance Computing Center

CERN Document Server

Jäger, Willi

2003-01-01

This book presents the state-of-the-art in modeling and simulation on supercomputers. Leading German research groups present their results achieved on high-end systems of the High Performance Computing Center Stuttgart (HLRS) for the year 2002. Reports cover all fields of supercomputing simulation ranging from computational fluid dynamics to computer science. Special emphasis is given to industrially relevant applications. Moreover, by presenting results for both vector sytems and micro-processor based systems the book allows to compare performance levels and usability of a variety of supercomputer architectures. It therefore becomes an indispensable guidebook to assess the impact of the Japanese Earth Simulator project on supercomputing in the years to come.

Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders

International Nuclear Information System (INIS)

Radeka, V.; Rescia, S.; Rehn, L.A.; Manfredi, P.F.; Speziali, V.

1991-11-01

The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described

The influence of the scale effect and high temperatures on the strength and strains of high performance concrete

Directory of Open Access Journals (Sweden)

Korsun Vladimyr Ivanovych

2014-03-01

Full Text Available The most effective way to reduce the structure mass, labor input and expenses for its construction is to use modern high-performance concrete of the classes С50/60… С90/105, which possess high physical and mathematic characteristics. One of the constraints for their implementation in mass construction in Ukraine is that in design standards there are no experimental data on the physical and mathematic properties of concrete of the classes more than С50/60. Also there are no exact statements on calculating reinforced concrete structures made of high-performance concretes.The authors present the results of experimental research of the scale effect and short-term and long-term heating up to +200 ° C influence on temperature and shrinkage strain, on strength and strain characteristics under compression and tensioning of high-strength modified concrete of class C70/85. The application of high performance concretes is challenging in the process of constructing buildings aimed at operating in high technological temperatures: smoke pipes, coolers, basins, nuclear power plants' protective shells, etc. Reducing cross-sections can lead to reducing temperature drops and thermal stresses in the structures.

High Performance Computing in Science and Engineering '16 : Transactions of the High Performance Computing Center, Stuttgart (HLRS) 2016

CERN Document Server

Kröner, Dietmar; Resch, Michael

2016-01-01

This book presents the state-of-the-art in supercomputer simulation. It includes the latest findings from leading researchers using systems from the High Performance Computing Center Stuttgart (HLRS) in 2016. The reports cover all fields of computational science and engineering ranging from CFD to computational physics and from chemistry to computer science with a special emphasis on industrially relevant applications. Presenting findings of one of Europe’s leading systems, this volume covers a wide variety of applications that deliver a high level of sustained performance. The book covers the main methods in high-performance computing. Its outstanding results in achieving the best performance for production codes are of particular interest for both scientists and engineers. The book comes with a wealth of color illustrations and tables of results.

Hydrogen Field Test Standard: Laboratory and Field Performance

Science.gov (United States)

Pope, Jodie G.; Wright, John D.

2015-01-01

The National Institute of Standards and Technology (NIST) developed a prototype field test standard (FTS) that incorporates three test methods that could be used by state weights and measures inspectors to periodically verify the accuracy of retail hydrogen dispensers, much as gasoline dispensers are tested today. The three field test methods are: 1) gravimetric, 2) Pressure, Volume, Temperature (PVT), and 3) master meter. The FTS was tested in NIST's Transient Flow Facility with helium gas and in the field at a hydrogen dispenser location. All three methods agree within 0.57 % and 1.53 % for all test drafts of helium gas in the laboratory setting and of hydrogen gas in the field, respectively. The time required to perform six test drafts is similar for all three methods, ranging from 6 h for the gravimetric and master meter methods to 8 h for the PVT method. The laboratory tests show that 1) it is critical to wait for thermal equilibrium to achieve density measurements in the FTS that meet the desired uncertainty requirements for the PVT and master meter methods; in general, we found a wait time of 20 minutes introduces errors methods, respectively and 2) buoyancy corrections are important for the lowest uncertainty gravimetric measurements. The field tests show that sensor drift can become a largest component of uncertainty that is not present in the laboratory setting. The scale was calibrated after it was set up at the field location. Checks of the calibration throughout testing showed drift of 0.031 %. Calibration of the master meter and the pressure sensors prior to travel to the field location and upon return showed significant drifts in their calibrations; 0.14 % and up to 1.7 %, respectively. This highlights the need for better sensor selection and/or more robust sensor testing prior to putting into field service. All three test methods are capable of being successfully performed in the field and give equivalent answers if proper sensors without drift are

Relationships Between Anaerobic Performance, Field Tests and Game Performance of Sitting Volleyball Players

Directory of Open Access Journals (Sweden)

Marszalek Jolanta

2015-12-01

Full Text Available The aim of this study was to evaluate relationships between anaerobic performance, field tests, game performance and anthropometric variables of sitting volleyball players. Twenty elite Polish sitting volleyball players were tested using the 30 s Wingate Anaerobic Test for arm crank ergometer and participated in six physical field tests. Heights in position to block and to spike, as well as arm reach were measured. Players were observed during the game on the court in terms of effectiveness of the serve, block, attack, receive and defense. Pearson analysis and the Spearman's rank correlation coefficient were used. The strongest correlations were found between the chest pass test and mean power and peak power (r=.846; p=.001 and r=.708; p=.0005, respectively, and also between the T-test and peak power (r= −.718; p=.001. Mean power correlated with the 3 m test (r= −.540; p=.014, the 5 m test (r= −.592; p=.006, and the T-test (r= −.582; p=.007. Peak power correlated with the 3 m test (r= −.632; p=.003, the 5 m test (r= −.613; p=.004, speed & agility (r= −.552; p=.012 and speed & endurance (r=−.546; p=.013. Significant correlations were observed between anthropometric parameters and anaerobic performance variables (p≤.001, and also between anthropometric parameters and field tests (p≤.05. Game performance and physical fitness of sitting volleyball players depended on their anthropometric variables: reach of arms, the position to block and to spike. The chest pass test could be used as a non-laboratory field test of anaerobic performance of sitting volleyball players.

Fuel properties effect on the performance of a small high temperature rise combustor

Science.gov (United States)

Acosta, Waldo A.; Beckel, Stephen A.

1989-01-01

The performance of an advanced small high temperature rise combustor was experimentally determined at NASA-Lewis. The combustor was designed to meet the requirements of advanced high temperature, high pressure ratio turboshaft engines. The combustor featured an advanced fuel injector and an advanced segmented liner design. The full size combustor was evaluated at power conditions ranging from idle to maximum power. The effect of broad fuel properties was studied by evaluating the combustor with three different fuels. The fuels used were JP-5, a blend of Diesel Fuel Marine/Home Heating Oil, and a blend of Suntec C/Home Heating Oil. The fuel properties effect on the performance of the combustion in terms of pattern factor, liner temperatures, and exhaust emissions are documented.

High performance bulk metallic glass/carbon nanotube composite cathodes for electron field emission

International Nuclear Information System (INIS)

Hojati-Talemi, Pejman; Gibson, Mark A.; East, Daniel; Simon, George P.

2011-01-01

We report the preparation of new nanocomposites based on a combination of bulk metallic glass and carbon nanotubes for electron field emission applications. The use of bulk metallic glass as the matrix ensures high electrical and thermal conductivity, high thermal stability, and ease of processing, whilst the well dispersed carbon nanotubes act as highly efficient electron emitters. These advantages, alongside excellent electron emission properties, make these composites one of the best reported options for electron emission applications to date.

High performance bulk metallic glass/carbon nanotube composite cathodes for electron field emission

Energy Technology Data Exchange (ETDEWEB)

Hojati-Talemi, Pejman [Department of Materials Engineering, Monash University, Clayton, Vic 3800 (Australia); Mawson Institute, University of South Australia, Mawson Lakes, SA 5095 (Australia); Gibson, Mark A. [Process Science and Engineering, Commonwealth Scientific and Industrial Research Organisation, Clayton, Vic 3168 (Australia); East, Daniel; Simon, George P. [Department of Materials Engineering, Monash University, Clayton, Vic 3800 (Australia)

2011-11-07

We report the preparation of new nanocomposites based on a combination of bulk metallic glass and carbon nanotubes for electron field emission applications. The use of bulk metallic glass as the matrix ensures high electrical and thermal conductivity, high thermal stability, and ease of processing, whilst the well dispersed carbon nanotubes act as highly efficient electron emitters. These advantages, alongside excellent electron emission properties, make these composites one of the best reported options for electron emission applications to date.

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Science.gov (United States)

Mulkens, Jan; Kubis, Michael; Hinnen, Paul; de Graaf, Roelof; van der Laan, Hans; Padiy, Alexander; Menchtchikov, Boris

2013-04-01

Immersion lithography is being extended to the 20-nm and 14-nm node and the lithography performance requirements need to be tightened further to enable this shrink. In this paper we present an integral method to enable high-order fieldto- field corrections for both imaging and overlay, and we show that this method improves the performance with 20% - 50%. The lithography architecture we build for these higher order corrections connects the dynamic scanner actuators with the angle resolved scatterometer via a separate application server. Improvements of CD uniformity are based on enabling the use of freeform intra-field dose actuator and field-to-field control of focus. The feedback control loop uses CD and focus targets placed on the production mask. For the overlay metrology we use small in-die diffraction based overlay targets. Improvements of overlay are based on using the high order intra-field correction actuators on a field-tofield basis. We use this to reduce the machine matching error, extending the heating control and extending the correction capability for process induced errors.

High Performance Bulk Thermoelectric Materials

Energy Technology Data Exchange (ETDEWEB)

Ren, Zhifeng [Boston College, Chestnut Hill, MA (United States)

2013-03-31

Over 13 plus years, we have carried out research on electron pairing symmetry of superconductors, growth and their field emission property studies on carbon nanotubes and semiconducting nanowires, high performance thermoelectric materials and other interesting materials. As a result of the research, we have published 104 papers, have educated six undergraduate students, twenty graduate students, nine postdocs, nine visitors, and one technician.

Highly air stable passivation of graphene based field effect devices.

Science.gov (United States)

Sagade, Abhay A; Neumaier, Daniel; Schall, Daniel; Otto, Martin; Pesquera, Amaia; Centeno, Alba; Elorza, Amaia Zurutuza; Kurz, Heinrich

2015-02-28

The sensitivity of graphene based devices to surface adsorbates and charge traps at the graphene/dielectric interface requires proper device passivation in order to operate them reproducibly under ambient conditions. Here we report on the use of atomic layer deposited aluminum oxide as passivation layer on graphene field effect devices (GFETs). We show that successful passivation produce hysteresis free DC characteristics, low doping level GFETs stable over weeks though operated and stored in ambient atmosphere. This is achieved by selecting proper seed layer prior to deposition of encapsulation layer. The passivated devices are also demonstrated to be robust towards the exposure to chemicals and heat treatments, typically used during device fabrication. Additionally, the passivation of high stability and reproducible characteristics is also shown for functional devices like integrated graphene based inverters.

Low-Cost High-Performance MRI

Science.gov (United States)

Sarracanie, Mathieu; Lapierre, Cristen D.; Salameh, Najat; Waddington, David E. J.; Witzel, Thomas; Rosen, Matthew S.

2015-10-01

Magnetic Resonance Imaging (MRI) is unparalleled in its ability to visualize anatomical structure and function non-invasively with high spatial and temporal resolution. Yet to overcome the low sensitivity inherent in inductive detection of weakly polarized nuclear spins, the vast majority of clinical MRI scanners employ superconducting magnets producing very high magnetic fields. Commonly found at 1.5-3 tesla (T), these powerful magnets are massive and have very strict infrastructure demands that preclude operation in many environments. MRI scanners are costly to purchase, site, and maintain, with the purchase price approaching $1 M per tesla (T) of magnetic field. We present here a remarkably simple, non-cryogenic approach to high-performance human MRI at ultra-low magnetic field, whereby modern under-sampling strategies are combined with fully-refocused dynamic spin control using steady-state free precession techniques. At 6.5 mT (more than 450 times lower than clinical MRI scanners) we demonstrate (2.5 × 3.5 × 8.5) mm3 imaging resolution in the living human brain using a simple, open-geometry electromagnet, with 3D image acquisition over the entire brain in 6 minutes. We contend that these practical ultra-low magnetic field implementations of MRI (standards for affordable (<$50,000) and robust portable devices.

High field superconductor development and understanding

Energy Technology Data Exchange (ETDEWEB)

Larbalestier, David C. [Florida State Univ., Tallahassee, FL (United States); Lee, Peter J. [Florida State Univ., Tallahassee, FL (United States); Tarantini, Chiara [Florida State Univ., Tallahassee, FL (United States)

2014-09-28

All present circular accelerators use superconducting magnets to bend and to focus the particle beams. The most powerful of these machines is the large hadron collider (LHC) at CERN. The main ring dipole magnets of the LHC are made from Nb-Ti but, as the machine is upgraded to higher luminosity, more powerful magnets made of Nb₃Sn will be required. Our work addresses how to make the Nb₃Sn conductors more effective and more suitable for use in the LHC. The most important property of the superconducting conductor used for an accelerator magnet is that it must have very high critical current density, the property that allows the generation of high magnetic fields in small spaces. Nb₃Sn is the original high field superconductor, the material which was discovered in 1960 to allow a high current density in the field of about 9 T. For the high luminosity upgrade of the LHC, much higher current densities in fields of about 12 Tesla will be required. The critical value of the current density is of order 2600 A/mm² in a field of 12 Tesla. But there are very important secondary factors that complicate the attainment of this critical current density. The first is that the effective filament diameter must be no larger than about 40 µm. The second factor is that 50% of the cross-section of the Nb₃Sn conductor that is pure copper must be protected from any poisoning by any Sn leakage through the diffusion barrier that protects the package of niobium and tin from which the Nb₃Sn is formed by a high temperature reaction. These three, somewhat conflicting requirements, mean that optimization of the conductor is complex. The work described in this contract report addresses these conflicting requirements. They show that very sophisticated characterizations can uncover the way to satisfy all 3 requirements and they also suggest that the ultimate optimization of Nb₃Sn is still not yet in sight

Spatial Processing of Urban Acoustic Wave Fields from High-Performance Computations

National Research Council Canada - National Science Library

Ketcham, Stephen A; Wilson, D. K; Cudney, Harley H; Parker, Michael W

2007-01-01

.... The objective of this work is to develop spatial processing techniques for acoustic wave propagation data from three-dimensional high-performance computations to quantify scattering due to urban...

Pelvic endometriosis: a comparison between low-field (0.2 T) and high-field (1.5 T) magnetic resonance imaging

Energy Technology Data Exchange (ETDEWEB)

Minaif, Karine; Ajzen, Sergio [Universidade Federal de Sao Paulo (UNIFESP/EPM), SP (Brazil). Dept. of Imaging Diagnosis]. E-mail: kminaif@uol.com.br; Shigueoka, David Carlos; Minami, Cintia Cristina Satie; Sales, Danilo Moulin; Szejnfeld, Jacob [Universidade Federal de Sao Paulo (UNIFESP/EPM), SP (Brazil). Dept. of Imaging Diagnosis. Unit of Abdomen; Ruano, Jose Maria Cordeiro [Universidade Federal de Sao Paulo (UNIFESP/EPM), SP (Brazil). Dept. of General Gynecology. Sector of Videlaparoscopy; Noguti, Alberto Sinhiti [Universidade Federal de Sao Paulo (UNIFESP/EPM), SP (Brazil). Dept. of General Gynecology

2008-11-15

Objective: to compare low-field (0.2 T) with high-field (1.5 T) magnetic resonance imaging in the assessment of pelvic endometriosis and adenomyosis. Materials and methods: twenty-seven female patients with clinically suspected endometriosis were prospectively evaluated by means of high-field and low-field magnetic resonance imaging. The reading of the images was performed by a single radiologist, initiating by the low-field, followed by the high-field images. High-field magnetic resonance imaging was utilized as the golden-standard. Results: among the 27 patients included in the present study, 18 (66.7%) had some type of lesion suggesting the presence of endometriosis demonstrated at high-field images. In 14 of these patients the diagnosis was correctly established by low-field magnetic resonance imaging. Endometriomas, tubal lesions, and endometriotic foci > 7 mm identified at the high-field images were also identified at low-field images with 100% accuracy, sensitivity and specificity. Among the nine patients diagnosed with adenomyosis by high-field images, eight were correctly diagnosed by low-field images with 88.9% accuracy, specificity and sensitivity. Conclusion: low-field magnetic resonance imaging demonstrated a low sensitivity in the detection of small endometriotic foci, high sensitivity in the detection of endometriomas and large endometriotic foci, and high accuracy in the detection of adenomyosis when compared with high-field magnetic resonance imaging. (author)

Pelvic endometriosis: a comparison between low-field (0.2 T) and high-field (1.5 T) magnetic resonance imaging

International Nuclear Information System (INIS)

Minaif, Karine; Ajzen, Sergio; Shigueoka, David Carlos; Minami, Cintia Cristina Satie; Sales, Danilo Moulin; Szejnfeld, Jacob; Ruano, Jose Maria Cordeiro; Noguti, Alberto Sinhiti

2008-01-01

Objective: to compare low-field (0.2 T) with high-field (1.5 T) magnetic resonance imaging in the assessment of pelvic endometriosis and adenomyosis. Materials and methods: twenty-seven female patients with clinically suspected endometriosis were prospectively evaluated by means of high-field and low-field magnetic resonance imaging. The reading of the images was performed by a single radiologist, initiating by the low-field, followed by the high-field images. High-field magnetic resonance imaging was utilized as the golden-standard. Results: among the 27 patients included in the present study, 18 (66.7%) had some type of lesion suggesting the presence of endometriosis demonstrated at high-field images. In 14 of these patients the diagnosis was correctly established by low-field magnetic resonance imaging. Endometriomas, tubal lesions, and endometriotic foci > 7 mm identified at the high-field images were also identified at low-field images with 100% accuracy, sensitivity and specificity. Among the nine patients diagnosed with adenomyosis by high-field images, eight were correctly diagnosed by low-field images with 88.9% accuracy, specificity and sensitivity. Conclusion: low-field magnetic resonance imaging demonstrated a low sensitivity in the detection of small endometriotic foci, high sensitivity in the detection of endometriomas and large endometriotic foci, and high accuracy in the detection of adenomyosis when compared with high-field magnetic resonance imaging. (author)

GPU-accelerated FDTD modeling of radio-frequency field-tissue interactions in high-field MRI.

Science.gov (United States)

Chi, Jieru; Liu, Feng; Weber, Ewald; Li, Yu; Crozier, Stuart

2011-06-01

The analysis of high-field RF field-tissue interactions requires high-performance finite-difference time-domain (FDTD) computing. Conventional CPU-based FDTD calculations offer limited computing performance in a PC environment. This study presents a graphics processing unit (GPU)-based parallel-computing framework, producing substantially boosted computing efficiency (with a two-order speedup factor) at a PC-level cost. Specific details of implementing the FDTD method on a GPU architecture have been presented and the new computational strategy has been successfully applied to the design of a novel 8-element transceive RF coil system at 9.4 T. Facilitated by the powerful GPU-FDTD computing, the new RF coil array offers optimized fields (averaging 25% improvement in sensitivity, and 20% reduction in loop coupling compared with conventional array structures of the same size) for small animal imaging with a robust RF configuration. The GPU-enabled acceleration paves the way for FDTD to be applied for both detailed forward modeling and inverse design of MRI coils, which were previously impractical.

Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions.

Science.gov (United States)

Ichimura, Takashi; Fujiwara, Kohei; Tanaka, Hidekazu

2014-07-24

Controlling the electronic properties of functional oxide materials via external electric fields has attracted increasing attention as a key technology for next-generation electronics. For transition-metal oxides with metallic carrier densities, the electric-field effect with ionic liquid electrolytes has been widely used because of the enormous carrier doping capabilities. The gate-induced redox reactions revealed by recent investigations have, however, highlighted the complex nature of the electric-field effect. Here, we use the gate-induced conductance modulation of spinel ZnxFe₃₋xO₄ to demonstrate the dual contributions of volatile and non-volatile field effects arising from electronic carrier doping and redox reactions. These two contributions are found to change in opposite senses depending on the Zn content x; virtual electronic and chemical field effects are observed at appropriate Zn compositions. The tuning of field-effect characteristics via composition engineering should be extremely useful for fabricating high-performance oxide field-effect devices.

The effect of high performance work systems utilization on firm performance: does human resource attribution of employees matter?

Directory of Open Access Journals (Sweden)

Shibiru Ayalew Melesse

2016-12-01

Full Text Available A large body of research suggests that high performance work systems (HPWSs that enhance employees’ competencies, and motivate them, leads to competitive advantage. HPWPs are radically not ‘new practices’; they have been around for many years and have already been adopted by various organizations. However, the link between HPWS adoption & firm performance is yet blurred. The aim of this paper was to examine the moderating role of employees’ HR attributions on the relationship between adoption of HPWSs and firm performance. The current paper argues that human resource (HR attribution of employees moderates the relationship between HPWS and firm performance such that the effective adoption of high performance work systems in an organization partly depends on the type of employees’ attributions (commitment versus control of HR practices in the company. More specifically, it is proposed that adoption of HPWS can be more effective in organizations where employees’ attributions of HR practices is commitment focus than in firms where employees’ attributions of HR practice is control focus. The study contributes to understanding the ‘black box’ of HRM-performance link. Theoretical and practical implications and future research directions are discussed.

On the cosmological propagation of high energy particles in magnetic fields

International Nuclear Information System (INIS)

Alves Batista, Rafael

2015-04-01

In the present work the connection between high energy particles and cosmic magnetic fields is explored. Particularly, the focus lies on the propagation of ultra-high energy cosmic rays (UHECRs) and very-high energy gamma rays (VHEGRs) over cosmological distances, under the influence of cosmic magnetic fields. The first part of this work concerns the propagation of UHECRs in the magnetized cosmic web, which was studied both analytically and numerically. A parametrization for the suppression of the UHECR flux at energies ∝ 10 18 eV due to diffusion in extragalactic magnetic fields was found, making it possible to set an upper limit on the energy at which this magnetic horizon effect sets in, which is effects of galactic and extragalactic magnetic fields. The newest version, CRPropa 3, is discussed in details, including the novel feature of cosmological effects in three-dimensional simulations, which enables time dependent studies considering simultaneously magnetic field effects and the cosmological evolution of the universe. An interesting possibility is to use UHECRs to constrain properties of cosmic magnetic fields, and vice-versa. Numerical simulations of the propagation of UHECRs in the magnetized cosmic web, obtained through magnetohydrodynamical simulations of structure formation, were performed. It was studied the effects of different magnetic field seeds on the distribution of cosmic magnetic fields today, and their impact on the propagation of cosmic rays. Furthermore, the influence of uncertainties of the strength of

Evaluation of effect of high frequency electromagnetic field on growth and antibiotic sensitivity of bacteria.

Science.gov (United States)

Salmen, Saleh H; Alharbi, Sulaiman A; Faden, Asmaa A; Wainwright, M

2018-01-01

This study was aimed to evaluate the impact of high frequency electromagnetic fields (HF-EMF at 900 and 1800 MHz) on DNA, growth rate and antibiotic susceptibility of S. aureus , S. epidermidis , and P. aeruginosa . In this study, bacteria were exposed to 900 and 1800 MHz for 2 h and then inoculated to new medium when their growth rate and antibiotic susceptibility were evaluated. Results for the study of bacterial DNA unsuccessful to appearance any difference exposed and non-exposed S. aureus and S. epidermidis . Exposure of S. epidermidis and S. aureus to electromagnetic fields mostly produced no statistically significant decrease in bacterial growth, except for S. aureus when exposure to 900 MHz at 12 h. Exposure of P. aeruginosa to electromagnetic fields at 900 MHz however, lead to a significant reduction in growth rate, while 1800 MHz had insignificant effect. With the exception of S. aureus , treated with amoxicillin (30 µg) and exposed to electromagnetic fields, radiation treatment had no significant effect on bacterial sensitivity to antibiotics.

High performance work practices, innovation and performance

DEFF Research Database (Denmark)

Jørgensen, Frances; Newton, Cameron; Johnston, Kim

2013-01-01

Research spanning nearly 20 years has provided considerable empirical evidence for relationships between High Performance Work Practices (HPWPs) and various measures of performance including increased productivity, improved customer service, and reduced turnover. What stands out from......, and Africa to examine these various questions relating to the HPWP-innovation-performance relationship. Each paper discusses a practice that has been identified in HPWP literature and potential variables that can facilitate or hinder the effects of these practices of innovation- and performance...

Effects of high-intensity static magnetic fields on a root-based bioreactor system for space applications

Science.gov (United States)

Villani, Maria Elena; Massa, Silvia; Lopresto, Vanni; Pinto, Rosanna; Salzano, Anna Maria; Scaloni, Andrea; Benvenuto, Eugenio; Desiderio, Angiola

2017-11-01

Static magnetic fields created by superconducting magnets have been proposed as an effective solution to protect spacecrafts and planetary stations from cosmic radiations. This shield can deflect high-energy particles exerting injurious effects on living organisms, including plants. In fact, plant systems are becoming increasingly interesting for space adaptation studies, being useful not only as food source but also as sink of bioactive molecules in future bioregenerative life-support systems (BLSS). However, the application of protective magnetic shields would generate inside space habitats residual magnetic fields, of the order of few hundreds milli Tesla, whose effect on plant systems is poorly known. To simulate the exposure conditions of these residual magnetic fields in shielded environment, devices generating high-intensity static magnetic field (SMF) were comparatively evaluated in blind exposure experiments (250 mT, 500 mT and sham -no SMF-). The effects of these SMFs were assayed on tomato cultures (hairy roots) previously engineered to produce anthocyanins, known for their anti-oxidant properties and possibly useful in the setting of BLSS. Hairy roots exposed for periods ranging from 24 h to 11 days were morphometrically analyzed to measure their growth and corresponding molecular changes were assessed by a differential proteomic approach. After disclosing blind exposure protocol, a stringent statistical elaboration revealed the absence of significant differences in the soluble proteome, perfectly matching phenotypic results. These experimental evidences demonstrate that the identified plant system well tolerates the exposure to these magnetic fields. Results hereby described reinforce the notion of using this plant organ culture as a tool in ground-based experiments simulating space and planetary environments, in a perspective of using tomato 'hairy root' cultures as bioreactor of ready-to-use bioactive molecules during future long-term space missions.

Wafer-Scale Gigahertz Graphene Field Effect Transistors on SiC Substrates

Institute of Scientific and Technical Information of China (English)

潘洪亮; 金智; 麻芃; 郭建楠; 刘新宇; 叶甜春; 李佳; 敦少博; 冯志红

2011-01-01

Wafer-scale graphene field-effect transistors are fabricated using benzocyclobutene and atomic layer deposition Al2O3 as the top-gate dielectric.The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate.The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found.For the intrinsic characteristic of this particular channel material,the devices cannot be switched off.The cut-off frequencies of these graphene field-effect transistors,which have a gate length of l μm,are larger than 800 MHz.The largest one can reach 1.24 GHz.There are greater than 95％ active devices that can be successfully applied.We thus succeed in fabricating wafer-scale gigahertz graphene field-effect transistors,which paves the way for high-performance graphene devices and circuits.%Wafer-scale graphene Beld-effect transistors are fabricated using benzocyclobutene and atomic layer deposition AI2O3 as the top-gate dielectric. The epitaxial-graphene layer is formed by graphitization of a 2-inch-diameter Si-face semi-insulating 6H-SiC substrate. The graphene on the silicon carbide substrate is heavily n-doped and current saturation is not found. For the intrinsic characteristic of this particular channel material, the devices cannot be switched off. The cut-off frequencies of these graphene field-effect transistors, which have a gate length of l μm, are larger than 800MHz. The largest one can reach 1.24 GHz. There are greater than 95% active devices that can be successfully applied. We thus succeed in fabricating wafer-scale gigahertz graphene Geld-effect transistors, which paves the way for high-performance graphene devices and circuits.

Correction of inhomogeneous RF field using multiple SPGR signals for high-field spin-echo MRI

International Nuclear Information System (INIS)

Ishimori, Yoshiyuki; Monma, Masahiko; Yamada, Kazuhiro; Kimura, Hirohiko; Uematsu, Hidemasa; Fujiwara, Yasuhiro; Yamaguchi, Isao

2007-01-01

The purpose of this study was to propose a simple and useful method for correcting nonuniformity of high-field (3 Tesla) T 1 -weighted spin-echo (SE) images based on a B1 field map estimated from gradient recalled echo (GRE) signals. The method of this study was to estimate B1 inhomogeneity, spoiled gradient recalled echo (SPGR) images were collected using a fixed repetition time of 70 ms, flip angles of 45 and 90 degrees, and echo times of 4.8 and 10.4 ms. Selection of flip angles was based on the observation that the relative intensity changes in SPGR signals were very similar among different tissues at larger flip angles than the Ernst angle. Accordingly, spatial irregularity that was observed on a signal ratio map of the SPGR images acquired with these 2 flip angles was ascribed to inhomogeneity of the B1 field. Dual echo time was used to eliminate T 2 * effects. The ratio map that was acquired was scaled to provide an intensity correction map for SE images. Both phantom and volunteer studies were performed using a 3T magnetic resonance scanner to validate the method. In the phantom study, the uniformity of the T 1 -weighted SE image improved by 23%. Images of human heads also showed practically sufficient improvement in the image uniformity. The present method improves the image uniformity of high-field T 1 -weighted SE images. (author)

Effects of a Nonuniform Tip Clearance Profile on the Performance and Flow Field in a Centrifugal Compressor

Directory of Open Access Journals (Sweden)

Yohan Jung

2012-01-01

Full Text Available This paper presents a numerical investigation of the effects of a nonuniform tip clearance profile on the performance and flow field in a centrifugal compressor with a vaneless diffuser. This study focuses in particular on the magnitude and location of the wake. Six impellers with different tip clearance profiles were tested in the flow simulations. The accuracy of the numerical simulations was assessed by comparing the experimental data with the computational results for a system characterized by the original tip clearance. Although the performance improved for low tip clearances, a low tip clearance at the trailing edge improved the compressor performance more significantly than a low tip clearance at the leading edge. The flow field calculated for a system characterized by a low tip clearance at the trailing edge produced a more uniform velocity distribution both in the circumferential and in the axial directions at the impeller exit because the wake magnitude was reduced. As a consequence, this impeller provided a better potential for diffusion processes inside a vaneless diffuser.

Levitation performance of YBCO bulk in different applied magnetic fields

International Nuclear Information System (INIS)

Liu, W.; Wang, S.Y.; Jing, H.; Zheng, J.; Jiang, M.; Wang, J.S.

2008-01-01

The maglev performance of bulk high-T c superconductor (HTS) is investigated above three different types of permanent magnet guideways (PMGs). The main difference among these PMGs is the method used to concentrate the magnetic flux. The experimental results indicate that the levitation force depends only in part on the peak value of the magnetic field. The variation of the vertical component of the magnetic field (B z ), and the structure of the magnetic field are also responsible for the levitation force. These results imply that the permanent magnet with high coercive force is better at concentrating flux th an iron. The conclusions contribute in a very helpful way to the design and optimization of PMGs for HTS maglev systems

Levitation performance of YBCO bulk in different applied magnetic fields

Energy Technology Data Exchange (ETDEWEB)

Liu, W. [Applied Superconductivity Laboratory, Southwest Jiaotong University, Chengdu 610031 (China)], E-mail: asclab@asclab.cn; Wang, S.Y.; Jing, H.; Zheng, J.; Jiang, M.; Wang, J.S. [Applied Superconductivity Laboratory, Southwest Jiaotong University, Chengdu 610031 (China)

2008-07-01

The maglev performance of bulk high-T{sub c} superconductor (HTS) is investigated above three different types of permanent magnet guideways (PMGs). The main difference among these PMGs is the method used to concentrate the magnetic flux. The experimental results indicate that the levitation force depends only in part on the peak value of the magnetic field. The variation of the vertical component of the magnetic field (B{sub z}), and the structure of the magnetic field are also responsible for the levitation force. These results imply that the permanent magnet with high coercive force is better at concentrating flux th an iron. The conclusions contribute in a very helpful way to the design and optimization of PMGs for HTS maglev systems.

High beta plasma confinement and neoclassical effects in a small aspect ratio reversed field pinch

International Nuclear Information System (INIS)

Hayase, K.; Sugimoto, H.; Ashida, H.

2003-01-01

The high β equilibrium and stability of a reversed field pinch (RFP) configuration with a small aspect ratio are theoretically studied. The equilibrium profile, high beta limit and the bootstrap current effect on those are calculated. The Mercier stable critical β decreases with 1/A, but β∼0.2 is permissible at A=2 with help of edge current profile modification. The effect of bootstrap current is evaluated for various pressure and current profiles and cross-sectional shapes of plasma by a self-consistent neoclassical PRSM equilibrium formulation. The high bootstrap current fraction (F bs ) increases the shear stabilization effect in the core region, which enhances significantly the stability β limit compared with that for the classical equilibrium. These features of small aspect ratio RFP, high β and high F bs , and a possibly easier access to the quasi-single helicity state beside the intrinsic compact structure are attractive for the feasible economical RFP reactor concept. (author)

Solar cooker effect test and temperature field simulation of radio telescope subreflector

International Nuclear Information System (INIS)

Chen, Deshen; Wang, Huajie; Qian, Hongliang; Zhang, Gang; Shen, Shizhao

2016-01-01

Highlights: • Solar cooker effect test of a telescope subreflector is conducted for the first time. • The cause and temperature distribution regularities are analyzed contrastively. • Simulation methods are proposed using light beam segmentation and tracking methods. • The validity of simulation methods is evaluated using the test results. - Abstract: The solar cooker effect can cause a local high temperature of the subreflector and can directly affect the working performance of the radio telescope. To study the daily temperature field and solar cooker effect of a subreflector, experimental studies are carried out with a 3-m-diameter radio telescope model for the first time. Initially, the solar temperature distribution rules, especially the solar cooker effect, are summarized according to the field test results under the most unfavorable conditions. Then, a numerical simulation for the solar temperature field of the subreflector is studied by light beam segmentation and tracking methods. Finally, the validity of the simulation methods is evaluated using the test results. The experimental studies prove that the solar cooker effect really exists and should not be overlooked. In addition, simulation methods for the subreflector temperature field proposed in this paper are effective. The research methods and conclusions can provide valuable references for thermal design, monitoring and control of similar high-precision radio telescopes.

Biological effects from electromagnetic fields: Research progress and exposure measurements

International Nuclear Information System (INIS)

Mauro, F.; Lovisolo, G.A.; Raganella, L.

1992-01-01

Although it is commonly accepted that exposure to high levels of electromagnetic, micro- and radiofrequency waves produces harmful effects to the health of man, the formulation of exposure limits is still an open process and dependent upon the evolving level of knowledge in this field. This paper surveys the current level of knowledge gained through 'in vitro' and 'in vivo' radiological and epidemiological studies on different types of electromagnetic radiation derived effects - chromosomal, mutagenic, carcinogenic. It then reviews efforts by international organizations, e. g., the International Radiation Protection Association, to establish exposure limits for radiofrequency electromagnetic fields. Brief notes are given on the electromagnetic radiation monitoring campaign being performed by public health authorities in the Lazio Region of Italy

Pair-breaking effects by parallel magnetic field in electric-field-induced surface superconductivity

International Nuclear Information System (INIS)

Nabeta, Masahiro; Tanaka, Kenta K.; Onari, Seiichiro; Ichioka, Masanori

2016-01-01

Highlights: • Zeeman effect shifts superconducting gaps of sub-band system, towards pair-breaking. • Higher-level sub-bands become normal-state-like electronic states by magnetic fields. • Magnetic field dependence of zero-energy DOS reflects multi-gap superconductivity. - Abstract: We study paramagnetic pair-breaking in electric-field-induced surface superconductivity, when magnetic field is applied parallel to the surface. The calculation is performed by Bogoliubov-de Gennes theory with s-wave pairing, including the screening effect of electric fields by the induced carriers near the surface. Due to the Zeeman shift by applied fields, electronic states at higher-level sub-bands become normal-state-like. Therefore, the magnetic field dependence of Fermi-energy density of states reflects the multi-gap structure in the surface superconductivity.

Sugar as an optimal carbon source for the enhanced performance of MgB2 superconductors at high magnetic fields

Science.gov (United States)

Shcherbakova, O. V.; Pan, A. V.; Wang, J. L.; Shcherbakov, A. V.; Dou, S. X.; Wexler, D.; Babić, E.; Jerčinović, M.; Husnjak, O.

2008-01-01

In this paper we report the results of an extended study of the effect of sugar doping on the structural and electromagnetic properties of MgB2 superconductors. High values of the upper critical field (Bc2) of 36 T and the irreversibility field (Birr) of 27 T have been estimated at the temperature of 5 K in a bulk MgB2 sample with the addition of 10 wt% of sugar. The critical current density (Jc(Ba)) of sugar-doped samples has been significantly improved in the high field region. The value of transport Jc has reached as high as 108 A m-2 at 10 T and 5 K for Fe-sheathed sugar-doped MgB2 wire. The analysis of the pinning mechanism in the samples investigated indicated that dominant vortex pinning occurs on the surface type of pinning defects, such as grain boundaries, dislocations, stacking faults etc, for both pure and doped MgB2. In sugar-doped samples, pinning is governed by numerous crystal lattice defects, which appear in MgB2 grains as a result of crystal lattice distortion caused by carbon substitution for boron and nano-inclusions. The drastically improved superconducting properties of sugar-doped samples are also attributed to the highly homogeneous distribution and enhanced reactivity of this dopant with host Mg and B powders. The results of this work suggest that sugar is the optimal source of carbon for doping MgB2 superconductor, especially for application at high magnetic fields.

Formation of electron-root radial electric field and its effect on thermal transport in LHD high Te plasma

International Nuclear Information System (INIS)

Matsuoka, Seikichi; Satake, Shinsuke; Takahashi, Hiromi; Yokoyama, Masayuki; Ido, Takeshi; Shimizu, Akihiro; Shimozuma, Takashi; Wakasa, Arimitsu; Murakami, Sadayoshi

2013-01-01

Neoclassical transport analyses have been performed for a high electron temperature LHD plasma with steep temperature gradient using a neoclassical transport simulation code, FORTEC-3D. It is shown that the large positive radial electric field is spontaneously formed at the core along with the increase in the electron temperature, while the neoclassical heat diffusivity remains almost unchanged. This indicates that the 1/ν-type increase expected in the neoclassical transport in helical plasmas can be avoided by the spontaneous formation of the radial electric field. At the same time, it is found that the experimentally estimated heat diffusivity is significantly reduced. This suggests that the formation process of the transport barrier in the high electron temperature plasma can be caused by the spontaneous formation of the radial electric field. (author)

Performance comparison between p–i–n and p–n junction tunneling field-effect transistors

Science.gov (United States)

Yoon, Young Jun; Seo, Jae Hwa; Kang, In Man

2018-06-01

In this study, we investigated the direct-current (DC) and radio-frequency (RF) performances of p–i–n and p–n junction tunneling field-effect transistors (TFETs). Compared to the p–i–n junction TFET, the p–n junction TFET exhibited higher on-state current (I on) because the channel formation mechanism of the p–n junction TFET resulted in a narrower tunneling barrier and an expanded tunneling area. Further, the reduction of I on of the p–n junction TFET by the interface trap was smaller. Moreover, the p–n junction TFET exhibited lower gate-to-drain capacitance (C gd) because a depletion capacitance (C gd,dep) was formed by the depletion region under gate dielectric. Consequently, the p–n junction TFET achieved an improvement of cut-off frequency (f T) and intrinsic delay time (τ), which are related to the current performance and total gate capacitance (C gg). We confirmed the enhancement of device performances in terms of I on, f T, and τ by the conduction mechanism of the p–n junction TFET.

Effective time management for high performance in an organization Case: Lasaco Assurance PLC

OpenAIRE

Adeojo, Adeyinka

2012-01-01

The main objective of this thesis is to determine the effect of time management on high organizational performance using LASACO ASSURANCE Plc. as a case company. In this thesis, the employees working with the company were sent questionnaires. Their responses were critically analyzed and thus related to the theories. A quantitative approach was used as the methodology. According to the theory, time management is a method for managers to increase work performance effectiveness. Time man...

Biological effects of high strength electric fields. Second interim progress report, September 1976--March 1977

Energy Technology Data Exchange (ETDEWEB)

Phillips, R.D.; Kaune, W.T.

1977-05-01

This report describes progress made on the Project during the period of September 9, 1976 to March 31, 1977 towards the determination of the biological effects of high strength electric fields on small laboratory animals. The efforts to date can be divided into five categories: (1) the design, construction, and testing of a prototype and special studies exposure system; (2) the design and construction of exposure systems for rats and mice; (3) dosimetry; (4) experiments to determine the maximum field strength which does not produce corona discharge, ozone formation, shocks to the animal, hair stimulation, or a behavioral preference by rats to avoid exposure to the field; and (5) preparations for the biological screening experiments.

Experimental microdosimetry in high energy radiation fields

International Nuclear Information System (INIS)

Spurny, F.; Bednar, J.; Vlcek, B.; Bottollier-Depois, J.-F.; Molokanov, A.G.

2000-01-01

correspond to the interactions of secondary panicles created by primary radiation are close to the sensitive volume of the equipment. The comparison of both methods was performed in the field on board aircraft and in high energy reference fields. it was found that the microdosimetric distributions observed agreed at least qualitatively, a quantitative agreement of integral dosimetric values was found as well. The measurements in proton beams were performed in several points along the Bragg curve. Actually, we were able to observe the influence of primary beam contamination due to the filtration as well as due to the secondary particle created during the penetration of beams in the phantome. The relevance of such data for the radiotherapy application of high energy protons is evident. It was proved that both method can give relevant and useful information on the microdosimetric distributions in complex beams and fields of high energy panicles. The further development of this approach is in progress in our laboratories. (author)

The effects of porosity, electrode and barrier materials on the conductivity of piezoelectric ceramics in high humidity and dc electric field

International Nuclear Information System (INIS)

Weaver, P M; Cain, M G; Stewart, M; Anson, A; Franks, J; Lipscomb, I P; McBride, J W; Zheng, D; Swingler, J

2012-01-01

Prolonged operation of piezoelectric ceramic devices under high dc electric fields promotes leakage currents between the electrodes. This paper investigates the effects of ceramic porosity, edge conduction and electrode materials and geometry in the development of low resistance conduction paths through the ceramic. Localized changes in the ceramic structure and corresponding microscopic breakdown sites are shown to be associated with leakage currents and breakdown processes resulting from prolonged operation in harsh environments. The role of barrier coatings in mitigating the effects of humidity is studied, and results are presented on improved performance using composite diamond-like carbon/polymer coatings. In contrast to the changes in the electrical properties of the ceramic, the measurements of the piezoelectric properties showed no significant effect of humidity. (paper)

Performance of a vanadium redox flow battery with and without flow fields

International Nuclear Information System (INIS)

Xu, Q.; Zhao, T.S.; Zhang, C.

2014-01-01

Highlights: • The performances of a VRFB with/without flow fields are compared. • The respective maximum power efficiency occurs at different flow rates. • The battery with flow fields Exhibits 5% higher energy efficiency. - Abstract: A flow field is an indispensable component for fuel cells to macroscopically distribute reactants onto electrodes. However, it is still unknown whether flow fields are also required in all-vanadium redox flow batteries (VRFBs). In this work, the performance of a VRFB with flow fields is analyzed and compared with the performance of a VRFB without flow fields. It is demonstrated that the battery with flow fields has a higher discharge voltage at higher flow rates, but exhibits a larger pressure drop. The maximum power-based efficiency occurs at different flow rates for the both batteries with and without flow fields. It is found that the battery with flow fields Exhibits 5% higher energy efficiency than the battery without flow fields, when operating at the flow rates corresponding to each battery's maximum power-based efficiency. Therefore, the inclusion of flow fields in VRFBs can be an effective approach for improving system efficiency

Solving nonlinear, High-order partial differential equations using a high-performance isogeometric analysis framework

KAUST Repository

Cortes, Adriano Mauricio; Vignal, Philippe; Sarmiento, Adel; Garcí a, Daniel O.; Collier, Nathan; Dalcin, Lisandro; Calo, Victor M.

2014-01-01

In this paper we present PetIGA, a high-performance implementation of Isogeometric Analysis built on top of PETSc. We show its use in solving nonlinear and time-dependent problems, such as phase-field models, by taking advantage of the high-continuity of the basis functions granted by the isogeometric framework. In this work, we focus on the Cahn-Hilliard equation and the phase-field crystal equation.

Effects of Confinement on Microstructure and Charge Transport in High Performance Semicrystalline Polymer Semiconductors

KAUST Repository

Himmelberger, Scott

2012-11-23

The film thickness of one of the most crystalline and highest performing polymer semiconductors, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene) (PBTTT), is varied in order to determine the effects of interfaces and confinement on the microstructure and performance in organic field effect transistors (OFETs). Crystalline texture and overall film crystallinity are found to depend strongly on film thickness and thermal processing. The angular distribution of crystallites narrows upon both a decrease in film thickness and thermal annealing. These changes in the film microstructure are paired with thin-film transistor characterization and shown to be directly correlated with variations in charge carrier mobility. Charge transport is shown to be governed by film crystallinity in films below 20 nm and by crystalline orientation for thicker films. An optimal thickness is found for PBTTT at which the mobility is maximized in unannealed films and where mobility reaches a plateau at its highest value for annealed films. The effects of confinement on the morphology and charge transport properties of poly(2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene) (PBTTT) are studied using quantitative X-ray diffraction and field-effect transistor measurements. Polymer crystallinity is found to limit charge transport in the thinnest films while crystalline texture and intergrain connectivity modulate carrier mobility in thicker films. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effects of Confinement on Microstructure and Charge Transport in High Performance Semicrystalline Polymer Semiconductors

KAUST Repository

Himmelberger, Scott; Dacuñ a, Javier; Rivnay, Jonathan; Jimison, Leslie H.; McCarthy-Ward, Thomas; Heeney, Martin; McCulloch, Iain; Toney, Michael F.; Salleo, Alberto

2012-01-01

The film thickness of one of the most crystalline and highest performing polymer semiconductors, poly(2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b] thiophene) (PBTTT), is varied in order to determine the effects of interfaces and confinement on the microstructure and performance in organic field effect transistors (OFETs). Crystalline texture and overall film crystallinity are found to depend strongly on film thickness and thermal processing. The angular distribution of crystallites narrows upon both a decrease in film thickness and thermal annealing. These changes in the film microstructure are paired with thin-film transistor characterization and shown to be directly correlated with variations in charge carrier mobility. Charge transport is shown to be governed by film crystallinity in films below 20 nm and by crystalline orientation for thicker films. An optimal thickness is found for PBTTT at which the mobility is maximized in unannealed films and where mobility reaches a plateau at its highest value for annealed films. The effects of confinement on the morphology and charge transport properties of poly(2,5-bis(3-tetradecylthiophen-2-yl) thieno[3,2-b]thiophene) (PBTTT) are studied using quantitative X-ray diffraction and field-effect transistor measurements. Polymer crystallinity is found to limit charge transport in the thinnest films while crystalline texture and intergrain connectivity modulate carrier mobility in thicker films. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Effects of Rear-Wheel Camber on Maximal Effort Mobility Performance in Wheelchair Athletes

NARCIS (Netherlands)

Mason, B.; van der Woude, L.; Tolfrey, K.; Goosey-Tolfrey, V.

This study examined the effect of rear-wheel camber on maximal effort wheelchair mobility performance. 14 highly trained wheelchair court sport athletes performed a battery of field tests in 4 standardised camber settings (15°, 18°, 20°, 24°) with performance analysed using a velocometer. 20 m

High Accelerating Field Superconducting Radio Frequency Cavities

Science.gov (United States)

Orr, R. S.; Saito, K.; Furuta, F.; Saeki, T.; Inoue, H.; Morozumi, Y.; Higo, T.; Higashi, Y.; Matsumoto, H.; Kazakov, S.; Yamaoka, H.; Ueno, K.; Sato, M.

2008-06-01

We have conducted a study of a series of single cell superconducting RF cavities at KEK. These tests were designed to investigate the effect of surface treatment on the maximum accelerating field attainable. All of these cavities are of the ICHIRO shape, based on the Low Loss shape. Our results indicate that accelerating fields as high as the theoretical maximum of 50MV/m are attainable.

A segmented cell approach for studying the effects of serpentine flow field parameters on PEMFC current distribution

International Nuclear Information System (INIS)

Reshetenko, Tatyana V.; Bender, Guido; Bethune, Keith; Rocheleau, Richard

2013-01-01

Highlights: ► Effects of a flow field design on PEMFC were investigated. ► A segmented cell was used to study 6- and 10-channel serpentine flow fields. ► 10-Channel flow field improved a fuel cell's performance at high current. ► Performance distribution was more uniform for 10-channel than for 6-channel flow field. ► The performance improvement was due to an increased pressure drop. -- Abstract: A serpentine flow field is a commonly used design in proton exchange membrane fuel cells (PEMFCs). Consequently, optimization of the flow field parameters is critically needed. A segmented cell system was used to study the impact of the flow field's parameters on the current distribution in a PEMFC, and the data obtained were analyzed in terms of voltage overpotentials. 6-Channel and 10-channel serpentine flow field designs were investigated. At low current the segments performance was found to slightly decrease for a 10-channel serpentine flow field. However, increasing the number of channels increased the fuel cell performance when operating at high current and the cell performance became more uniform downstream. The observed improvement in fuel cell performance was attributed to a decrease in mass transfer voltage losses (permeability and diffusion), due to an increased pressure drop. Spatially distributed electrochemical impedance spectroscopy (EIS) data showed differences in the local segment impedance response and confirmed the performance distribution and the impact of the flow field design