WorldWideScience

Sample records for high-k pair-broken bands

  1. Identical high- K three-quasiparticle rotational bands

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Harjeet; Singh, Pardeep [Guru Nanak Dev University, Department of Physics, Amritsar (India)

    2016-12-15

    A comprehensive study of high-K three-quasiparticle rotational bands in odd-A nuclei indicates the similarity in γ-ray energies and dynamic moment of inertia I{sup (2)}. The extent of the identicality between the rotational bands is evaluated by using the energy factor method. For nuclei pairs exhibiting identical bands, the average relative change in the dynamic moment of inertia I{sup (2)} is also determined. The identical behaviour shown by these bands is attributed to the interplay of nuclear structure parameters: deformation and the pairing correlations. Also, experimental trend of the I(ℎ) vs. ℎω (MeV) plot for these nuclei pairs is shown to be in agreement with Tilted-Axis Cranking (TAC) model calculations. (orig.)

  2. Identicity in high-K three quasiparticle rotational bands: a theoretical approach

    International Nuclear Information System (INIS)

    Kaur, Harjeet; Singh, Pardeep; Malik, Sham S

    2015-01-01

    The systematics are studied for the identical band phenomenon in high-K three quasiparticle rotational bands. The identical rotational bands based on the same bandhead spin are analyzed on the basis of similarities in γ-ray energies, dynamic moment of inertia and kinematic moment of inertia in particular, which is a function of deformation degrees of freedom, pairing strengths and Nilsson orbitals in nuclei. It is established that a combined effect of all these parameters decides the identicity of the moment of inertia in high-K three quasiparticle rotational bands as the systematics are backed by the Tilted Axis Cranking model calculations. (paper)

  3. High-K rotational bands in {sup 174}Hf and {sup 175}Hf

    Energy Technology Data Exchange (ETDEWEB)

    Gjoerup, N L; Sletten, G [The Niels Bohr Institute, Roskilbe (Denmark); Walker, P M [Surrey Univ., Guildford (United Kingdom). Dept. of Physics; Bentley, M A [Daresbury Lab. (United Kingdom); Cullen, D M; Sharpey-Schafer, J F; Fallon, P; Smith, G [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.

    1992-08-01

    High sensitivity experiments with {sup 48}Ca, {sup 18}O and {sup 9}Be induced reactions using the ESSA-30, TESSA-3 and NORDBALL arrays have provided extensive new information on the high spin level structures of {sup 174}Hf and {sup 175}Hf. During the series of experiments, several new bands have been found and most known bands have been extended considerably. Spin and excitation energy ranges for {sup 174}Hf are now {approx} 35 {Dirac_h} and {approx} 13 MeV, respectively, and for {sup 175}Hf ranges are {approx} 30 {Dirac_h} and {approx} 7 MeV. respectively. Several new high-K structures have been found in {sup 174}Hf and the structure of these and the already known high-K bands in both nuclei together with the new Tilted Axis Cranking approach might explain the small K-hindrances observed for K-isomers in this region. (author). 8 refs., 2 figs.

  4. Direct transitions from high-K isomers to low-K bands -- {gamma} softness or coriolis coupling

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Yoshifumi R.; Narimatsu, Kanako; Ohtsubo, Shin-Ichi [Kyushu Univ., Fukuoka (Japan)] [and others

    1996-12-31

    Recent measurements of direct transitions from high-K isomers to low-K bands reveal severe break-down of the K-selection rule and pose the problem of how to understand the mechanism of such K-violation. The authors recent systematic calculations by using a simple {gamma}-tunneling model reproduced many of the observed hindrances, indicating the importance of the {gamma} softness. However, there are some data which cannot be explained in terms of the {gamma}-degree of freedom. In this talk, the authors also discuss the results of conventional Coriolis coupling calculations, which is considered to be another important mechanism.

  5. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

    International Nuclear Information System (INIS)

    Lucovsky, G.; Fulton, C.C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J.L.; Nemanich, R.J.; Schlom, D.G.; Afanase'v, V.V.

    2005-01-01

    X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices

  6. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

    International Nuclear Information System (INIS)

    Vexler, M. I.; Grekhov, I. V.

    2016-01-01

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  7. Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

    Science.gov (United States)

    Kakushima, K.; Okamoto, K.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Tsutsui, K.; Sugii, N.; Ahmet, P.; Hattori, T.; Iwai, H.

    2008-11-01

    Band bendings of Si substrates have been observed using hard x-ray photoemission spectroscopy. With a capability of collecting photoelectrons generated as deep as 40 nm, the binding energy shift in a core level caused by the potential profile at the surface of the substrate results in a spectrum broadening. The broadening is found to be significant when heavily doped substrates are used owing to its steep potential profile. The surface potential of the substrate can be obtained by deconvolution of the spectrum. This method has been applied to observe the band bending profile of metal-oxide-semiconductor capacitors with high-k gate dielectrics. By comparing the band bending profiles of heavily-doped n+- and p+-Si substrates, the interface dipoles presented at interfaces can be estimated. In the case of W gated La2O3/La-silicate capacitor, an interface dipole to shift the potential of -0.45 V has been estimated at La-silicate/Si interface, which effectively reduces the apparent work function of W. On the other hand, an interface dipole of 0.03-0.07 V has been found to exist at Hf-silicate/SiO2 interface for W gated HfO2/Hf-silicate/SiO2 capacitor.

  8. High-K Strategy Scale: A Measure of the High-K Independent Criterion of Fitness

    Directory of Open Access Journals (Sweden)

    Cezar Giosan

    2006-01-01

    Full Text Available The present study aimed at testing whether factors documented in the literature as being indicators of a high-K reproductive strategy have effects on fitness in extant humans. A 26-item High-K Strategy Scale comprising these factors was developed and tested on 250 respondents. Items tapping into health and attractiveness, upward mobility, social capital and risks consideration, were included in the scale. As expected, the scale showed a significant correlation with perceived offspring quality and a weak, but significant association with actual number of children. The scale had a high reliability coefficient (Cronbach's Alpha = .92. Expected correlations were found between the scale and number of medical diagnoses, education, perceived social support, and number of previous marriages, strengthening the scale's construct validity. Implications of the results are discussed.

  9. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  10. Investigation of capacitance characteristics in metal/high-k ...

    Indian Academy of Sciences (India)

    MS received 4 May 2016; accepted 10 January 2017; published online 21 August 2017. Abstract. Capacitance vs. ... with high-k materials is the prime technological challenge. [2]. ... reliability of MOS devices are strongly dependent on the for-.

  11. Emerging Applications for High K Materials in VLSI Technology

    Science.gov (United States)

    Clark, Robert D.

    2014-01-01

    The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM) diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD) is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing. PMID:28788599

  12. Emerging Applications for High K Materials in VLSI Technology

    Directory of Open Access Journals (Sweden)

    Robert D. Clark

    2014-04-01

    Full Text Available The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI manufacturing for leading edge Dynamic Random Access Memory (DRAM and Complementary Metal Oxide Semiconductor (CMOS applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing.

  13. High-K structures in {sup 180}W and {sup 181}W

    Energy Technology Data Exchange (ETDEWEB)

    Yeung, K C; Walker, P M; Singleton, B D.D. [Surrey Univ., Guildford (United Kingdom). Dept. of Physics; Urban, W; Lisle, J C; Copnell, J; Mo, J N [Manchester Univ. (United Kingdom). Schuster Lab.; Joyce, M J [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.; Gjorup, N L; Sletten, G [Risoe National Lab., Roskilde (Denmark)

    1992-08-01

    In each of the prolate-deformed isotopes {sup 180}W and {sup 181}W, a very high-K non-collective state has been found which decays directly into the corresponding collective ground-state rotational band. There is complete breakdown of the K-selection rule, in contrast to the partial breakdown observed recently in {sup 174}Hf and {sup 182}Os. Nevertheless, the non-collective states themselves retain characteristics associated with a prolate axially symmetric shape, implying that K is still a useful quantum number. (author). 17 refs., 2 figs.

  14. Investigation of capacitance characteristics in metal/high-k

    Indian Academy of Sciences (India)

    Keywords. C − V characteristic; high-k dielectric; interface state density; MIS structure; nanotechnology; TCAD simulation. Abstract. Capacitance vs. voltage ( C − V ) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitorare investigated in this paper. Bi-dimensional simulations with Silvaco TCAD ...

  15. 4f-5d hybridization in a high k dielectric

    International Nuclear Information System (INIS)

    Losovyj, Ya.B.; Tang, Jinke; Wang, Wendong; Hong Yuanjia; Palshin, Vadim; Tittsworth, Roland

    2006-01-01

    While intra-atomic f-d hybridization is expected, experimental confirmation of f-d hybridization in the photoemission final state leading to 4f band structure has been limited to 5f systems and compound systems with very shallow 4f levels. We demonstrate that core 4f states can contribute to the valence band structure in a wide band gap dielectric, in this case HfO 2 in the photoemission final state. In spite of the complications of sample charging, we find evidence of symmetry in the shallow 4f levels and wave vector dependent band dispersion, the latter consistent with the crystal structure of HfO 2

  16. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  17. Engineering the propagation of high-k bulk plasmonic waves in multilayer hyperbolic metamaterials by multiscale structuring

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Lavrinenko, Andrei; Sipe, J. E.

    2013-01-01

    , wavelength scale, the propagation of bulk plasmon polaritons in the resulting multiscale HMM is subject to photonic band gap phenomena. A great degree of control over such plasmons can be exerted by varying the superstructure geometry. As an example, Bragg reflection and Fabry-Pérot resonances...... are demonstrated in multiscale HMMs with periodic superstructures. More complicated, aperiodically ordered superstructures are also considered, with fractal Cantor-like multiscale HMMs exhibiting characteristic self-similar spectral signatures in the high-k band. The multiscale HMM concept is shown...

  18. Quasi-particle and collective magnetism: Rotation, pairing and blocking in high-K isomers

    International Nuclear Information System (INIS)

    Stone, N.J.; Stone, J.R.; Walker, P.M.; Bingham, C.R.

    2013-01-01

    For the first time, a wide range of collective magnetic g-factors g R , obtained from a novel analysis of experimental data for multi-quasi-particle configurations in high-K isomers, is shown to exhibit a striking systematic variation with the relative number of proton and neutron quasi-particles, N p −N n . Using the principle of additivity, the quasi-particle contribution to magnetism in high-K isomers of Lu–Re, Z=71–75, has been estimated. Based on these estimates, band-structure branching ratio data are used to explore the behavior of the collective contribution as the number and proton/neutron nature (N p , N n ), of the quasi-particle excitations, change. Basic ideas of pairing, its quenching by quasi-particle excitation and the consequent changes to moment of inertia and collective magnetism are discussed. Existing model calculations do not reproduce the observed g R variation adequately. The paired superfluid system of nucleons in these nuclei, and their excitations, present properties of general physics interest. The new-found systematic behavior of g R in multi-quasi-particle excitations of this unique system, showing variation from close to zero for multi-neutron states to above 0.5 for multi-proton states, opens a fresh window on these effects and raises the important question of just which nucleons contribute to the ‘collective’ properties of these nuclei

  19. Pairing and Blocking in High-K Isomers: Variation of the Collective Parameter gR

    Directory of Open Access Journals (Sweden)

    Stone N.J.

    2013-12-01

    Full Text Available Using the principle of additivity, the quasi-particle contribution to magnetism in high-K isomers of Lu - Re has been estimated. Based on these estimates band structure branching ratio data is used to explore the behavior of the collective contribution as the number and neutron/proton nature (Np, Nn, of the quasi-particle excitations, change. A striking systematic variation of the collective g-factor gR with the difference, Np – Nn, is revealed. Basic ideas of pairing, its quenching by quasi-particle excitation and the consequent changes to moment of inertia and collective magnetism are discussed. The new found systematic behaviour of gR opens a fresh window on these effects amenable to detailed theoretical investigation.

  20. Mechanical Design of the NSTX High-k Scattering Diagnostic

    International Nuclear Information System (INIS)

    Feder, R.; Mazzucato, E.; Munsat, T.; Park, H.; Smith, D.R.; Ellis, R.; Labik, G.; Priniski, C.

    2005-01-01

    The NSTX High-k Scattering Diagnostic measures small-scale density fluctuations by the heterodyne detection of waves scattered from a millimeter wave probe beam at 280 GHz and λ = 1.07 mm. To enable this measurement, major alterations were made to the NSTX vacuum vessel and Neutral Beam armor. Close collaboration between the PPPL physics and engineering staff resulted in a flexible system with steerable launch and detection optics that can position the scattering volume either near the magnetic axis (ρ ∼ .1) or near the edge (ρ ∼ .8). 150 feet of carefully aligned corrugated waveguide was installed for injection of the probe beam and collection of the scattered signal in to the detection electronics

  1. Mechanical Design of the NSTX High-k Scattering Diagnostic

    Energy Technology Data Exchange (ETDEWEB)

    Feder, R.; Mazzucato, E.; Munsat, T.; Park, H,; Smith, D. R.; Ellis, R.; Labik, G.; Priniski, C.

    2005-09-26

    The NSTX High-k Scattering Diagnostic measures small-scale density fluctuations by the heterodyne detection of waves scattered from a millimeter wave probe beam at 280 GHz and {lambda}=1.07 mm. To enable this measurement, major alterations were made to the NSTX vacuum vessel and Neutral Beam armor. Close collaboration between the PPPL physics and engineering staff resulted in a flexible system with steerable launch and detection optics that can position the scattering volume either near the magnetic axis ({rho} {approx} .1) or near the edge ({rho} {approx} .8). 150 feet of carefully aligned corrugated waveguide was installed for injection of the probe beam and collection of the scattered signal in to the detection electronics.

  2. Nanostructure characterization of high k materials by spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Pereira, L.; Aguas, H.; Fortunato, E.; Martins, R.

    2006-01-01

    In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 deg. C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 deg. C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering

  3. Modeling of leakage currents in high-k dielectrics

    International Nuclear Information System (INIS)

    Jegert, Gunther Christian

    2012-01-01

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO 2 material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO 2 /TiN capacitor structures were suggested and problem areas that may

  4. Modeling of leakage currents in high-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Jegert, Gunther Christian

    2012-03-15

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO{sub 2} material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO{sub 2}/TiN capacitor structures were suggested and problem areas

  5. Structural and optical properties of germanium nanostructures on Si(100 and embedded in high-k oxides

    Directory of Open Access Journals (Sweden)

    Ray Samit

    2011-01-01

    Full Text Available Abstract The structural and optical properties of Ge quantum dots (QDs grown on Si(001 for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001 QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

  6. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    Science.gov (United States)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  7. High-K precession modes: Axially symmetric limit of wobbling motion in the cranked random-phase approximation description

    International Nuclear Information System (INIS)

    Shimizu, Yoshifumi R.; Matsuzaki, Masayuki; Matsuyanagi, Kenichi

    2005-01-01

    The rotational band built on the high-K multi-quasiparticle state can be interpreted as a multi-phonon band of the precession mode, which represents the precessional rotation about the axis perpendicular to the direction of the intrinsic angular momentum. By using the axially symmetric limit of the random-phase approximation (RPA) formalism developed for the nuclear wobbling motion, we study the properties of the precession modes in 178 W: the excitation energies, B(E2) and B(M1) values. We show that the excitations of such a specific type of rotation can be well described by the RPA formalism, which gives new insight into the wobbling motion in the triaxial superdeformed nuclei from a microscopic viewpoint

  8. Precession mode on high-K configurations: non-collective axially-symmetric limit of wobbling motion

    International Nuclear Information System (INIS)

    Shimizu, Yoshifumi R; Matsuzaki, Masayuki; Matsuyanagi, Kenichi

    2006-01-01

    The precession mode, the rotational excitation built on the high-K isomeric state, in comparison with the recently identified wobbling mode has been studied. The random-phase-approximation (RPA) formalism, which has been developed for the nuclear wobbling motion, is invoked and the precession phonon is obtained by the non-collective axially symmetric limit of the formalism. The excitation energies and the electromagnetic properties of the precession bands in 178 W are calculated, and it is found that the results of RPA calculations well correspond to those of the rotor model; the correspondence can be understood by an adiabatic approximation to the RPA phonon. As a by-product, it is also found that the problem of too small out-of-band B(E2) in our previous RPA wobbling calculations can be solved by a suitable choice of the triaxial deformation which corresponds to the one used in the rotor model

  9. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    International Nuclear Information System (INIS)

    Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

    2013-01-01

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

  10. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  11. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

  12. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    International Nuclear Information System (INIS)

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  13. Optimum source/drain overlap design for 16 nm high-k/metal gate MOSFETs

    International Nuclear Information System (INIS)

    Jang, Junyong; Lim, Towoo; Kim, Youngmin

    2009-01-01

    We explore a source/drain (S/D) design for a 16 nm MOSFET utilizing a replacement process for a high-k gate dielectric and metal gate electrode integration. Using TCAD simulation, a trade-off study between series resistance and overlap capacitance is carried out for a high-k dielectric surrounding gate structure, which results from the replacement process. An optimum S/D overlap to gate for the high-k surrounding gate structure is found to be different from the conventional gate structure, i.e. 0∼1 nm underlap is preferred for the surround high-k gate structure while 1∼2 nm overlap for the conventional gate one

  14. Suppression of subthreshold characteristics variation for junctionless multigate transistors using high-k spacers

    International Nuclear Information System (INIS)

    Lou, Haijun; Zhang, Baili; Li, Dan; Lin, Xinnan; He, Jin; Chan, Mansun

    2015-01-01

    In this work, the high-k spacer is proposed to suppress the subthreshold characteristics variation of junctionless multigate transistor (JMT) with non-ideal sidewall angle for the first time. It is demonstrated that the variation of subthreshold characteristics induced by the changing sidewall angle is efficiently suppressed by high-k spacers due to the enhanced corner effect through the fringe capacitance, and the electrostatic integrity of JMTs is also improved at sub-22 nm gate length. Two key parameters of high-k spacer, the thickness and length, have been optimized in terms of the suppression of subthreshold characteristics variation. Then their optimal values are proposed. The benefit of high-k spacer makes JMTs more scalable. (paper)

  15. Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Djara, V.; Cherkaoui, K.; Negara, M. A.; Hurley, P. K., E-mail: paul.hurley@tyndall.ie [Tyndall National Institute, University College Cork, Dyke Parade, Cork (Ireland)

    2015-11-28

    An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g} measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.

  16. Study of high-k gate dielectrics by means of positron annihilation

    International Nuclear Information System (INIS)

    Uedono, A.; Naito, T.; Otsuka, T.; Ito, K.; Shiraishi, K.; Yamabe, K.; Miyazaki, S.; Watanabe, H.; Umezawa, N.; Hamid, A.; Chikyow, T.; Ohdaira, T.; Suzuki, R.; Ishibashi, S.; Inumiya, S.; Kamiyama, S.; Akasaka, Y.; Nara, Y.; Yamada, K.

    2007-01-01

    High-dielectric constant (high-k) gate materials, such as HfSiO x and HfAlO x , fabricated by atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. The size distributions of the open volumes and the local atomic configurations around such volumes can be discussed using positron annihilation parameters, and they were found to correlate with the electrical properties of the films. We confirmed that the positron annihilation is useful technique to characterize the matrix structure of amorphous high-k materials, and can be used to determine process parameters for the fabrication of high-k gate dielectrics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Multi-quasiparticle high-K isomeric states in deformed nuclei

    Directory of Open Access Journals (Sweden)

    Xu F. R.

    2016-01-01

    Full Text Available In the past years, we have made many theoretical investigations on multi-quasiparticle high-K isomeric states. A deformation-pairing-configuration self-consistent calculation has been developed by calculating a configuration-constrained multi-quasiparticle potential energy surface (PES. The specific single-particle orbits that define the high-K configuration are identified and tracked (adiabatically blocked by calculating the average Nilsson numbers. The deformed Woods-Saxon potential was taken to give single-particle orbits. The configuration-constrained PES takes into account the shape polarization effect. Such calculations give good results on excitation energies, deformations and other structure information about multi-quasiparticle high-K isomeric states. Many different mass regions have been investigated.

  18. Effects of high-order deformation on high-K isomers in superheavy nuclei

    International Nuclear Information System (INIS)

    Liu, H. L.; Bertulani, C. A.; Xu, F. R.; Walker, P. M.

    2011-01-01

    Using, for the first time, configuration-constrained potential-energy-surface calculations with the inclusion of β 6 deformation, we find remarkable effects of the high-order deformation on the high-K isomers in 254 No, the focus of recent spectroscopy experiments on superheavy nuclei. For shapes with multipolarity six, the isomers are more tightly bound and, microscopically, have enhanced deformed shell gaps at N=152 and Z=100. The inclusion of β 6 deformation significantly improves the description of the very heavy high-K isomers.

  19. Accelerated life testing and reliability of high K multilayer ceramic capacitors

    Science.gov (United States)

    Minford, W. J.

    1981-01-01

    The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.

  20. Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

    Directory of Open Access Journals (Sweden)

    Zhen Li

    2015-09-01

    Full Text Available This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed.

  1. High-k shallow traps observed by charge pumping with varying discharging times

    International Nuclear Information System (INIS)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

    2013-01-01

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO 2 /metal gate stacks. N T -V high level characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N T for extra contribution of I cp traps. N T is the number of traps, and I cp is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I cp traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti x N 1−x metal gate concentrations. Next, N T -V high level characteristic curves with different falling times (t falling time ) and base level times (t base level ) show that extra contribution of I cp traps decrease with an increase in t falling time . By fitting discharge formula for different t falling time , the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t falling time . This current cannot be measured by the charge pumping technique. Subsequent measurements of N T by charge pumping technique at t base level reveal a remainder of electrons trapped in high-k bulk shallow traps

  2. Particle-number conserving analysis for the 2-quasiparticle and high-K multi-quasiparticle states in doubly-odd 174,176Lu

    International Nuclear Information System (INIS)

    Li Bingheng; Lei Yi'an; Zhang Zhenhua

    2013-01-01

    Two-quasiparticle bands and low-lying excited high-K four-, six-, and eight-quasiparticle bands in the doubly-odd 174,176 Lu are analyzed by using the cranked shell model (CSM) with the pairing correlations treated by a particle-number conserving (PNC) method, in which the blocking effects are taken into account exactly. The proton and neutron Nilsson level schemes for 174,176 Lu are taken from the adjacent odd-A Lu and Hf isotopes, which are adopted to reproduce the experimental bandhead energies of the one-quasiproton and one-quasineutron bands of these odd-A Lu and Hf nuclei, respectively. Once the quasiparticle configurations are determined, the experimental bandhead energies and the moments of inertia of these two- and multi-quasiparticle bands are well reproduced by PNC-CSM calculations. The Coriolis mixing of the low-K (K=|Ω 1 -Ω 2 |) two-quasiparticle band of the Gallagher-Moszkowski doublet with one nucleon in the Ω=1/2 orbital is analyzed. (authors)

  3. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  4. Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

    Science.gov (United States)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

    2018-02-01

    Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

  5. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  6. High-k shallow traps observed by charge pumping with varying discharging times

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wang, Bin-Wei; Cao, Xi-Xin [Department of Embedded System Engineering, Peking University, Beijing, P.R.China (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

    2013-11-07

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

  7. High-k dielectrics as bioelectronic interface for field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Borstlap, D

    2007-03-15

    Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

  8. The effect of injection of high K+ solution into scala media.

    Science.gov (United States)

    Fukazawa, T; Ohmura, M; Yagi, N

    1987-01-01

    Thirty guinea pig ears were studied to investigate the effect of endolymphatic hydrops on the cochlea. High K+ solution was injected into the scala media, and cochlear microphonics (CM) and endocochlear potential (EP) were observed before, during and after the injection. The CM amplitude decreased rapidly after injection, ending in a depressed plateau value. By contrast, EP remained almost unchanged. By changing the composition of the solution it was suggested that the effect of the injection was mechanical one, rather than biochemical. In three ears, spontaneous recovery of CM was observed during a relatively long interval after the injection. The meaning of these findings for the hearing loss in Meniere's disease is discussed.

  9. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

    International Nuclear Information System (INIS)

    Afifah Maheran A H; Menon P S; Shaari, S; Elgomati, H A; Salehuddin, F; Ahmad, I

    2013-01-01

    In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO 2 ), while the metal gate is Tungsten Silicide (WSi x ). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (V th ). The objective of this experiment is to minimize the variance of V th where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of V th . The results show that the V th values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

  11. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  12. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  14. Congenital Constriction Band Syndrome

    OpenAIRE

    Rajesh Gupta, Fareed Malik, Rishabh Gupta, M.A.Basit, Dara Singh

    2008-01-01

    Congenital constriction bands are anomalous bands that encircle a digit or an extremity. Congenitalconstriction band syndrome is rare condition and is mostly associated with other musculoskeletaldisorders.We report such a rare experience.

  15. Integration issues of high-k and metal gate into conventional CMOS technology

    International Nuclear Information System (INIS)

    Song, S.C.; Zhang, Z.; Huffman, C.; Bae, S.H.; Sim, J.H.; Kirsch, P.; Majhi, P.; Moumen, N.; Lee, B.H.

    2006-01-01

    Issues surrounding the integration of Hf-based high-k dielectrics with metal gates in a conventional CMOS flow are discussed. The careful choice of a gate stack process as well as optimization of other CMOS process steps enables robust CMOSFETs with a wide process latitude. HfO 2 of a 2 nm physical thickness shows complete suppression of transient charge trapping resulting from a significant reduction in film volume as well as kinetically suppressed crystallization. Metal thickness is also critical when optimizing physical stress effects and minimizing dopant diffusion. A high temperature anneal after source and drain implantation in a conventional CMOSFET process reduces the interface state density and improves electron mobility

  16. Maintaining K+ balance on the low-Na+, high-K+ diet

    Science.gov (United States)

    Cornelius, Ryan J.; Wang, Bangchen; Wang-France, Jun

    2016-01-01

    A low-Na+, high-K+ diet (LNaHK) is considered a healthier alternative to the “Western” high-Na+ diet. Because the mechanism for K+ secretion involves Na+ reabsorptive exchange for secreted K+ in the distal nephron, it is not understood how K+ is eliminated with such low Na+ intake. Animals on a LNaHK diet produce an alkaline load, high urinary flows, and markedly elevated plasma ANG II and aldosterone levels to maintain their K+ balance. Recent studies have revealed a potential mechanism involving the actions of alkalosis, urinary flow, elevated ANG II, and aldosterone on two types of K+ channels, renal outer medullary K+ and large-conductance K+ channels, located in principal and intercalated cells. Here, we review these recent advances. PMID:26739887

  17. Elemental maps in human allantochorial placental vessels cells: 1. High K{sup +} and acetylcholine effects

    Energy Technology Data Exchange (ETDEWEB)

    Michelet-Habchi, C. E-mail: michelet@cenbg.in2p3.fr; Barberet, Ph.; Dutta, R.K.; Guiet-Bara, A.; Bara, M.; Moretto, Ph

    2003-09-01

    Regulation of vascular tone in the fetal extracorporeal circulation most likely depends on circulating hormones, local paracrine mechanisms and changes in membrane potential of vascular smooth muscle cells (VSMCs) and of vascular endothelial cells (VECs). The membrane potential is a function of the physiological activities of ionic channels (particularly, K{sup +} and Ca{sup 2+} channels in these cells). These channels regulate the ionic distribution into these cells. Micro-particle induced X-ray emission (PIXE) analysis was applied to determine the ionic composition of VSMC and of VEC in the placental human allantochorial vessels in a physiological survival medium (Hanks' solution) modified by the addition of acetylcholine (ACh: which opens the calcium-sensitive K{sup +} channels, K{sub Ca}) and of high concentration of K{sup +} (which blocks the voltage-sensitive K{sup +} channels, K{sub df}). In VSMC (media layer), the addition of ACh induced no modification of the Na, K, Cl, P, S, Mg and Ca concentrations and high K{sup +} medium increased significantly the Cl and K concentrations, the other ion concentrations remaining constant. In endothelium (VEC), ACh addition implicated a significant increase of Na and K concentration, and high K{sup +} medium, a significant increase in Cl and K concentration. These results indicated the importance of K{sub df}, K{sub Ca} and K{sub ATP} channels in the regulation of K{sup +} intracellular distribution in VSMC and VEC and the possible intervention of a Na-K-2Cl cotransport and corroborated the previous electrophysiological data.

  18. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Jiangwei Liu

    2018-06-01

    Full Text Available Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond for metal-oxide-semiconductor (MOS capacitors and MOS field-effect transistors (MOSFETs is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD and sputtering deposition (SD techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of ALD-Al2O3, ALD-HfO2, ALD-HfO2/ALD-Al2O3 multilayer, SD-HfO2/ALD-HfO2 bilayer, SD-TiO2/ALD-Al2O3 bilayer, and ALD-TiO2/ALD-Al2O3 bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al2O3/H-diamond and SD-HfO2/ALD-HfO2/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO2/ALD-Al2O3 bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the ALD-Al2O3/H-diamond, SD-HfO2/ALD-HfO2/H-diamond, and ALD-TiO2/ALD-Al2O3/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.

  19. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, Jean-Claude

    2009-01-01

    The electronic structure of binary titanate La2Ti2O7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La2Ti2O7 are determined as alpha(Ti) = 872...

  20. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, Jean-Claude

    2012-01-01

    The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have...

  1. Hetero-gate-dielectric double gate junctionless transistor (HGJLT) with reduced band-to-band tunnelling effects in subthreshold regime

    International Nuclear Information System (INIS)

    Ghosh, Bahniman; Mondal, Partha; Akram, M. W.; Bal, Punyasloka; Salimath, Akshay Kumar

    2014-01-01

    We propose a hetero-gate-dielectric double gate junctionless transistor (HGJLT), taking high-k gate insulator at source side and low-k gate insulator at drain side, which reduces the effects of band-to-band tunnelling (BTBT) in the sub-threshold region. A junctionless transistor (JLT) is turned off by the depletion of carriers in the highly doped thin channel (device layer) which results in a significant band overlap between the valence band of the channel region and the conduction band of the drain region, due to off-state drain bias, that triggers electrons to tunnel from the valence band of the channel region to the conduction band of the drain region leaving behind holes in the channel. These effects of band-to-band tunnelling increase the sub-threshold leakage current, and the accumulation of holes in the channel forms a parasitic bipolar junction transistor (n–p–n BJT for channel JLT) in the lateral direction by the source (emitter), channel (base) and drain (collector) regions in JLT structure in off-state. The proposed HGJLT reduces the subthreshold leakage current and suppresses the parasitic BJT action in off-state by reducing the band-to-band tunnelling probability. (semiconductor devices)

  2. High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

    Science.gov (United States)

    Dong, B. W.; Miao, Jun; Han, J. Z.; Shao, F.; Yuan, J.; Meng, K. K.; Wu, Y.; Xu, X. G.; Jiang, Y.

    2018-03-01

    An novel heterostructure composed of multiferroic Bi(Fe0.95Cr0.05)O3 (BFCO) and high-K ZrO2 (ZO) layers is investigated. Ferroelectric and electrical properties of the BFZO/ZO heterostructure have been investigated. A pronounced bipolar ferroelectric resistive switching characteristic was achieved in the heterostructure at room temperature. Interestingly, the BFCO/ZO structures exhibit a reproducible resistive switching with a high On/Off resistance ratio ∼2×103 and long retention time. The relationship between polarization and band structure at the interface of BFCO/ZO bilayer under the positive and negative sweepings has been discussed. As a result, the BFCO/ZO multiferroic/high-K heterostructure with high On/Off resistance ratio and long retention characterizes, exhibits a potential in future nonvolatile memory application.

  3. Psychometrics and life history strategy: the structure and validity of the High K Strategy Scale.

    Science.gov (United States)

    Copping, Lee T; Campbell, Anne; Muncer, Steven

    2014-03-22

    In this paper, we critically review the conceptualization and implementation of psychological measures of life history strategy associated with Differential K theory. The High K Strategy Scale (HKSS: Giosan, 2006) was distributed to a large British sample (n = 809) with the aim of assessing its factor structure and construct validity in relation to theoretically relevant life history variables: age of puberty, age of first sexual encounter, and number of sexual partners. Exploratory and confirmatory factor analyses indicated that the HKSS in its current form did not show an adequate statistical fit to the data. Modifications to improve fit indicated four correlated factors (personal capital, environmental stability, environmental security, and social capital). Later puberty in women was positively associated with measures of the environment and personal capital. Among men, contrary to Differential K predictions but in line with female mate preferences, earlier sexual debut and more sexual partners were positively associated with more favorable environments and higher personal and social capital. We raise concerns about the use of psychometric indicators of lifestyle and personality as proxies for life history strategy when they have not been validated against objective measures derived from contemporary life history theory and when their status as causes, mediators, or correlates has not been investigated.

  4. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    Science.gov (United States)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  5. High-k Scattering Receiver Mixer Performance for NSTX-U

    Science.gov (United States)

    Barchfeld, Robert; Riemenschneider, Paul; Domier, Calvin; Luhmann, Neville; Ren, Yang; Kaita, Robert

    2016-10-01

    The High-k Scattering system detects primarily electron-scale turbulence k θ spectra for studying electron thermal transport in NSTX-U. A 100 mW, 693 GHz probe beam passes through plasma, and scattered power is detected by a 4-pixel quasi optical, mixer array. Remotely controlled receiving optics allows the scattering volume to be located from core to edge with a k θ span of 7 to 40 cm-1. The receiver array features 4 RF diagonal input horns, where the electric field polarization is aligned along the diagonal of a square cross section horn, at 30 mm channel spacing. The local oscillator is provided by a 14.4 GHz source followed by a x48 multiplier chain, giving an intermediate frequency of 1 GHz. The receiver optics receive 4 discreet scattering angles simultaneously, and then focus the signals as 4 parallel signals to their respective horns. A combination of a steerable probe beam, and translating receiver, allows for upward or downward scattering which together can provide information about 2D turbulence wavenumber spectrum. IF signals are digitized and stored for later computer analysis. The performance of the receiver mixers is discussed, along with optical design features to enhance the tuning and performance of the mixers. Work supported in part by U.S. DOE Grant DE-FG02-99ER54518 and DE-AC02-09CH1146.

  6. Full Polymer Dielectric Elastomeric Actuators (DEA Functionalised with Carbon Nanotubes and High-K Ceramics

    Directory of Open Access Journals (Sweden)

    Tilo Köckritz

    2016-09-01

    Full Text Available Dielectric elastomer actuators (DEA are special devices which have a simple working and construction principle and outstanding actuation properties. The DEAs consist of a combination of different materials for the dielectric and electrode layers. The combination of these layers causes incompatibilities in their interconnections. Dramatic differences in the mechanical properties and bad adhesion of the layers are the principal causes for the reduction of the actuation displacement and strong reduction of lifetime. Common DEAs achieve actuation displacements of 2% and a durability of some million cycles. The following investigations represent a new approach to solving the problems of common systems. The investigated DEA consists of only one basic raw polymer, which was modified according to the required demands of each layer. The basic raw polymer was modified with single-walled carbon nanotubes or high-k ceramics, for example, lead magnesium niobate-lead titanate. The development of the full polymer DEA comprised the development of materials and technologies to realise a reproducible layer composition. It was proven that the full polymer actuator worked according to the theoretical rules. The investigated system achieved actuation displacements above 20% regarding thickness, outstanding interconnections at each layer without any failures, and durability above 3 million cycles without any indication of an impending malfunction.

  7. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  8. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Saidi, B. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Veillerot, M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Caubet, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Fabbri, J-M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Piallat, F. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Gassilloud, R. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Schamm-Chardon, S. [CEMES-CNRS et Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)

    2015-08-15

    Highlights: • The backside approach is a promising solution for advanced chemical characterization of future MOSFETs. • Frontside ToF-SIMS and Auger depth profiles are affected by cumulative mixing effects and thus not relevant for analyzing ultra-thin layers. • Higher in-depth resolution is possible in the backside approach for Auger and ToF-SIMS depth profiling. • Backside depth profiling allows revealing ultra-thin layers and elemental in-depth redistribution inside high-k/metal gate stacks. • Backside XPS allows preserving the full metal gate, thus enabling the analysis of real technological samples. - Abstract: Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration.

  9. Strongly coupled band in 140Gd

    International Nuclear Information System (INIS)

    Falla-Sotelo, F.; Oliveira, J.R.B.; Rao, M.N.

    2005-01-01

    Several high-K states are known to exist in the mass 130-140 region. For the N=74 even-even isotopes, Kπ = 8 - isomers, with lifetimes ranging from ns to ms, are known in 128 Xe, 130 Ba, 132 Ce, 134 Nd, 136 Sm, and 138 Gd[. In 140 Gd, we have observed for the first time a band also based on an Iπ = 8 - state. This could be the first case of a Kπ = 8 - state observed in an N=76 even-even isotope. The systematics of the Kπ = 8 - isomeric states in N=74 isotopes has been studied by A.M. Bruce et al. These states decay towards the K = 0 ground state band, and the transitions are K-forbidden. The 140 Gd case presents strong similarities but also some significant differences with relation to the N=74 isotopes. We propose the same configuration but with larger deformation in 140 Gd

  10. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  11. Band structure of semiconductors

    CERN Document Server

    Tsidilkovski, I M

    2013-01-01

    Band Structure of Semiconductors provides a review of the theoretical and experimental methods of investigating band structure and an analysis of the results of the developments in this field. The book presents the problems, methods, and applications in the study of band structure. Topics on the computational methods of band structure; band structures of important semiconducting materials; behavior of an electron in a perturbed periodic field; effective masses and g-factors for the most commonly encountered band structures; and the treatment of cyclotron resonance, Shubnikov-de Haas oscillatio

  12. Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon

    Science.gov (United States)

    Kirsch, Paul Daniel

    Surfaces and interfaces play a critical role in the manufacture and function of silicon based integrated circuits. It is therefore reasonable to study the chemistries at these surfaces and interfaces to improve existing processes and to develop new ones. Model barium strontium titanate high-k dielectric systems have been deposited on ultrathin silicon oxynitride in ultrahigh vacuum. The resulting nanostructures are characterized with secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). An interfacial reaction between Ba and Sr atoms and SiOxNy was found to create silicates, BaSixOy or SrSi xOy. Inclusion of N in the interfacial oxide decreased silicate formation in both Ba and Sr systems. Furthermore, inclusion of N in the interfacial oxide decreased the penetration of Ba and Sr containing species, such as silicides and silicates. Sputter deposited HfO2 was studied on nitrided and unnitrided Si(100) surfaces. XPS and SIMS were used to verify the presence of interfacial HfSixOy and estimate its relative amount on both nitrided and unnitrided samples. More HfSixOy formed without the SiNx interfacial layer. These interfacial chemistry results are then used to explain the electrical measurements obtained from metal oxide semiconductor (MOS) capacitors. MOS capacitors with interfacial SiNx exhibit reduced leakage current and increased capacitance. Lastly, surface science techniques were used to develop a processing technique for reducing thin films of copper (II) and copper (I) oxide to copper. Deuterium atoms (D*) and methyl radicals (CH3*) were shown to reduce Cu 2+ and/or Cu1+ to Cu0 within 30 min at a surface temperature of 400 K under a flux of 1 x 1015 atoms/cm2s. Temperature programmed desorption experiments suggest that oxygen leaves the surface as D2O and CO2 for the D* and CH3* treated surfaces, respectively.

  13. Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Jiang, Aiting; Yu, Edward T. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Lu, Sirong; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-02-07

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

  14. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

    International Nuclear Information System (INIS)

    Sarma, R.; Saikia, D.

    2010-01-01

    We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

  15. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, J.-C.; Kesler, V. G.

    2009-02-01

    The electronic structure of binary titanate La2Ti2O7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La2Ti2O7 are determined as αTi = 872.4 and αO = 1042.3 eV. Chemical bonding effects have been discussed with binding energy (BE) differences ΔTi = (BE O 1s - BE Ti 2p3/2) = 71.6 eV and ΔLa = (BE La 3d5/2 - BE O 1s) = 304.7 eV as key parameters in comparison with those in several titanium- and lanthanum-bearing oxides.

  16. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    International Nuclear Information System (INIS)

    Atuchin, V V; Gavrilova, T A; Grivel, J-C; Kesler, V G

    2009-01-01

    The electronic structure of binary titanate La 2 Ti 2 O 7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La 2 Ti 2 O 7 are determined as α Ti = 872.4 and α O = 1042.3 eV. Chemical bonding effects have been discussed with binding energy (BE) differences Δ Ti = (BE O 1s - BE Ti 2p 3/2 ) = 71.6 eV and Δ La = (BE La 3d 5/2 - BE O 1s) = 304.7 eV as key parameters in comparison with those in several titanium- and lanthanum-bearing oxides.

  17. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, J.-C.; Kesler, V. G.; Troitskaia, I. B.

    2012-11-01

    The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Pr2Ti2O7 have been determined as αTi=872.8 and αO=1042.3 eV. Variations of cation-anion bond ionicity have been discussed using binding energy differences ΔTi=(BE O 1s-BE Ti 2p3/2)=71.6 eV and ΔPr=BE(Pr 3d5/2)-BE(O 1s)=403.8 eV as key parameters in comparison with those of other titanium- and praseodymium-bearing oxides.

  18. Coexisting shape- and high-K isomers in the shape transitional nucleus {sup 188}Pt

    Energy Technology Data Exchange (ETDEWEB)

    Mukhopadhyay, S., E-mail: somm@barc.gov.in [Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Biswas, D.C. [Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Tandel, S.K. [UM-DAE Centre for Excellence in Basic Sciences, Mumbai 400098 (India); Danu, L.S.; Joshi, B.N.; Prajapati, G.K. [Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Nag, Somnath [Dept. of Physics, IIT Kharagpur, Kharagpur 721302 (India); Trivedi, T.; Saha, S.; Sethi, J.; Palit, R. [Dept. of Nuclear and Atomic Physics, TIFR, Mumbai 400005 (India); Joshi, P.K. [Homi Bhabha Centre for Science Education, TIFR, Mumbai 400088 (India)

    2014-12-12

    A high-spin study of the shape transitional nucleus {sup 188}Pt reveals the unusual coexistence of both shape- and K-isomeric states. Reduced B(E2) transition probabilities for decays from these states inferred from the data clearly establish their hindered character. In addition to other excited structures, a rotational band built upon the K isomer is identified, and its configuration has been assigned through an analysis of alignments and branching ratios. The shape evolution with spin in this nucleus has been inferred from both experimental observables and cranking calculations. The yrast positive parity structure appears to evolve from a near-prolate deformed shape through triaxial at intermediate excitation, and eventually to oblate at the highest spins.

  19. Coexisting shape- and high-K isomers in the shape transitional nucleus 188Pt

    Science.gov (United States)

    Mukhopadhyay, S.; Biswas, D. C.; Tandel, S. K.; Danu, L. S.; Joshi, B. N.; Prajapati, G. K.; Nag, Somnath; Trivedi, T.; Saha, S.; Sethi, J.; Palit, R.; Joshi, P. K.

    2014-12-01

    A high-spin study of the shape transitional nucleus 188Pt reveals the unusual coexistence of both shape- and K-isomeric states. Reduced B (E2) transition probabilities for decays from these states inferred from the data clearly establish their hindered character. In addition to other excited structures, a rotational band built upon the K isomer is identified, and its configuration has been assigned through an analysis of alignments and branching ratios. The shape evolution with spin in this nucleus has been inferred from both experimental observables and cranking calculations. The yrast positive parity structure appears to evolve from a near-prolate deformed shape through triaxial at intermediate excitation, and eventually to oblate at the highest spins.

  20. Comparison of the quality of the chest film between digital radiography and conventional high kV radiography

    International Nuclear Information System (INIS)

    Zeng Qingsi; Cen Renli; Chen Ling; He Jianxun; Lin Hanfei

    2003-01-01

    Objective: To evaluate the quality and usefulness of direct digital radiography system in roentgenogram of chest in clinical practice. Methods: 1000 cases of chest roentgenograms with digital radiography and high kV conventional radiography were selected for analysis by 3 senior radiologists. Results: 1. With digital radiography system, the quality of chest film was assessed as grade A in 50.6%, grade B in 38.5%, grade C in 10.9%, and no waste film. 2. With conventional high kV radiography, the quality of chest film was assessed as grade A in 41.1%, grade B in 44.1%, grade C in 13.3%, and waste film in 1.5%. The direct digital radiography was statistically superior to the conventional high kV radiography. 3. The fine structure of the lungs could be revealed in 100.0% of chest roentgenogram with direct digital radiograph system, which was significantly higher than that acquired with the conventional high KV radiography (78.6%, P < 0.001). Conclusion: Direct digital radiography could provide the chest film with better quality than that with the conventional high kV radiography. The direct digital radiography system is easy to operate, fast in capturing imaging and could provide post-processing techniques, which will facilitate the accurate diagnosis of chest radiography

  1. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    International Nuclear Information System (INIS)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, J.-C.; Kesler, V.G.; Troitskaia, I.B.

    2012-01-01

    The spectroscopic parameters and electronic structure of binary titanate Pr 2 Ti 2 O 7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Pr 2 Ti 2 O 7 have been determined as α Ti =872.8 and α O =1042.3 eV. Variations of cation–anion bond ionicity have been discussed using binding energy differences Δ Ti =(BE O 1s–BE Ti 2p 3/2 )=71.6 eV and Δ Pr =BE(Pr 3d 5/2 )−BE(O 1s)=403.8 eV as key parameters in comparison with those of other titanium- and praseodymium-bearing oxides. Highlights: ► Solid state synthesis of polar titanate Pr 2 Ti 2 O 7 . ► Structural and spectroscopic properties and electronic structure determination. ► Ti–O and Pr–O bonding analysis using Ti 2p 3/2 , Pr 3d 5/2 and O 1s core levels.

  2. Wide Band to ''Double Band'' upgrade

    International Nuclear Information System (INIS)

    Kasper, P.; Currier, R.; Garbincius, P.; Butler, J.

    1988-06-01

    The Wide Band beam currently uses electrons obtained from secondary photon conversions to produce the photon beam incident on the experimental targets. By transporting the positrons produced in these conversions as well as the electrons it is possible to almost double the number of photons delivered to the experiments per primary beam proton. 11 figs

  3. Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Wenbin, E-mail: cwb0201@163.com [Electromechanical Engineering College, Guilin University of Electronic Technology (China); McCarthy, Kevin G. [Department of Electrical and Electronic Engineering, University College Cork (Ireland); Copuroglu, Mehmet; O' Brien, Shane; Winfield, Richard; Mathewson, Alan [Tyndall National Institute, University College Cork (Ireland)

    2012-05-01

    This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 Degree-Sign C and 750 Degree-Sign C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

  4. Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

    Science.gov (United States)

    Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

    2014-02-01

    High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

  5. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    Directory of Open Access Journals (Sweden)

    Laura B. Ruppalt

    2014-12-01

    Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  6. Amniotic constriction bands

    Science.gov (United States)

    ... Supplements Videos & Tools Español You Are Here: Home → Medical Encyclopedia → Amniotic band sequence URL of this page: //medlineplus.gov/ency/ ... birth. The baby should be delivered in a medical center that has specialists experienced in caring for babies ... or partial loss of function of a body part. Congenital bands affecting large parts of the body cause the ...

  7. Band parameters of phosphorene

    International Nuclear Information System (INIS)

    Lew Yan Voon, L C; Wang, J; Zhang, Y; Willatzen, M

    2015-01-01

    Phosphorene is a two-dimensional nanomaterial with a direct band-gap at the Brillouin zone center. In this paper, we present a recently derived effective-mass theory of the band structure in the presence of strain and electric field, based upon group theory. Band parameters for this theory are computed using a first-principles theory based upon the generalized-gradient approximation to the density-functional theory. These parameters and Hamiltonian will be useful for modeling physical properties of phosphorene. (paper)

  8. Infrared diffuse interstellar bands

    Science.gov (United States)

    Galazutdinov, G. A.; Lee, Jae-Joon; Han, Inwoo; Lee, Byeong-Cheol; Valyavin, G.; Krełowski, J.

    2017-05-01

    We present high-resolution (R ˜ 45 000) profiles of 14 diffuse interstellar bands in the ˜1.45 to ˜2.45 μm range based on spectra obtained with the Immersion Grating INfrared Spectrograph at the McDonald Observatory. The revised list of diffuse bands with accurately estimated rest wavelengths includes six new features. The diffuse band at 15 268.2 Å demonstrates a very symmetric profile shape and thus can serve as a reference for finding the 'interstellar correction' to the rest wavelength frame in the H range, which suffers from a lack of known atomic/molecular lines.

  9. Band parameters of phosphorene

    DEFF Research Database (Denmark)

    Lew Yan Voon, L. C.; Wang, J.; Zhang, Y.

    2015-01-01

    Phosphorene is a two-dimensional nanomaterial with a direct band-gap at the Brillouin zone center. In this paper, we present a recently derived effective-mass theory of the band structure in the presence of strain and electric field, based upon group theory. Band parameters for this theory...... are computed using a first-principles theory based upon the generalized-gradient approximation to the density-functional theory. These parameters and Hamiltonian will be useful for modeling physical properties of phosphorene....

  10. CSF oligoclonal banding - slideshow

    Science.gov (United States)

    ... this page: //medlineplus.gov/ency/presentations/100145.htm CSF oligoclonal banding - series—Normal anatomy To use the ... 5 out of 5 Overview The cerebrospinal fluid (CSF) serves to supply nutrients to the central nervous ...

  11. Decay of superdeformed bands

    International Nuclear Information System (INIS)

    Carpenter, M.P.; Khoo, T.L.; Lauritsen, T.

    1995-01-01

    One of the major challenges in the study of superdeformation is to directly connect the large number of superdeformed bands now known to the yrast states. In this way, excitation energies, spins and parities can be assigned to the levels in the second well which is essential to establish the collective and single-particle components of these bands. This paper will review some of the progress which has been made to understand the decay of superdeformed bands using the new arrays including the measurement of the total decay spectrum and the establishment of direct one-step decays from the superdeformed band to the yrast line in 194 Hg. 42 refs., 5 figs

  12. Laparoscopic gastric banding

    Science.gov (United States)

    ... eat by making you feel full after eating small amounts of food. After surgery, your doctor can adjust the band ... You will feel full after eating just a small amount of food. The food in the small upper pouch will ...

  13. Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

    Science.gov (United States)

    Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

    2015-06-01

    High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

  14. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  15. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  16. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    International Nuclear Information System (INIS)

    Li Yongliang; Xu Qiuxia

    2010-01-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

  17. Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

    2010-05-31

    The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

  18. Strongly coupled band in {sup 140}Gd

    Energy Technology Data Exchange (ETDEWEB)

    Falla-Sotelo, F.; Oliveira, J.R.B.; Rao, M.N. [Instituto de Fisica, Universidade de Sao Paulo, Sao Paulo (Brazil)] (and others)

    2005-07-01

    Several high-K states are known to exist in the mass 130-140 region. For the N=74 even-even isotopes, K{pi} = 8{sup -} isomers, with lifetimes ranging from ns to ms, are known in {sup 128}Xe, {sup 130}Ba, {sup 132}Ce, {sup 134}Nd, {sup 136}Sm, and {sup 138}Gd[. In {sup 140}Gd, we have observed for the first time a band also based on an I{pi} = 8{sup -} state. This could be the first case of a K{pi} = 8{sup -} state observed in an N=76 even-even isotope. The systematics of the K{pi} = 8{sup -} isomeric states in N=74 isotopes has been studied by A.M. Bruce et al. These states decay towards the K = 0 ground state band, and the transitions are K-forbidden. The {sup 140}Gd case presents strong similarities but also some significant differences with relation to the N=74 isotopes. We propose the same configuration but with larger deformation in {sup 140}Gd.

  19. Ultra wide band antennas

    CERN Document Server

    Begaud, Xavier

    2013-01-01

    Ultra Wide Band Technology (UWB) has reached a level of maturity that allows us to offer wireless links with either high or low data rates. These wireless links are frequently associated with a location capability for which ultimate accuracy varies with the inverse of the frequency bandwidth. Using time or frequency domain waveforms, they are currently the subject of international standards facilitating their commercial implementation. Drawing up a complete state of the art, Ultra Wide Band Antennas is aimed at students, engineers and researchers and presents a summary of internationally recog

  20. The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

    International Nuclear Information System (INIS)

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-01-01

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

  1. Band-notched spiral antenna

    Science.gov (United States)

    Jeon, Jae; Chang, John

    2018-03-13

    A band-notched spiral antenna having one or more spiral arms extending from a radially inner end to a radially outer end for transmitting or receiving electromagnetic radiation over a frequency range, and one or more resonance structures positioned adjacent one or more segments of the spiral arm associated with a notch frequency band or bands of the frequency range so as to resonate and suppress the transmission or reception of electromagnetic radiation over said notch frequency band or bands.

  2. Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

    Science.gov (United States)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-04-01

    The electrical dipole moment at an ultrathin high-k (HfO2, Al2O3, TiO2, Y2O3, and SrO)/SiO2 interface and its correlation with the oxygen density ratio at the interface have been directly evaluated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. The electrical dipole moment at the high-k/SiO2 interface has been measured from the change in the cut-off energy of secondary photoelectrons. Moreover, the oxygen density ratio at the interface between high-k and SiO2 has been estimated from cation core-line signals, such as Hf 4f, Al 2p, Y 3d, Ti 2p, Sr 3d, and Si 2p. We have experimentally clarified the relationship between the measured electrical dipole moment and the oxygen density ratio at the high-k/SiO2 interface.

  3. Resolution of the 179W isomer anomaly: exposure of a fermi aligned s-band

    International Nuclear Information System (INIS)

    Walker, P.M.; Surrey Univ., Guildford; Dracoulis, G.D.; Byrne, A.P.; Fabricius, B.; Kibedi, T.; Stuchbery, A.E.

    1991-06-01

    The K Π = 35/2 - , five quasiparticle isomer in 179 W is shown to decay into the region of a backbend in the 7/2 - [514] band, allowing for the first time the identification of a full set of aligned-band states. Destructive interference results from level-mixing in the band-crossing region. The deduced γ-ray branching ratios are used to establish the mixing matrix elements and to show that the aligned band has a high value of the K-quantum number. The properties of well-defined alignment and yet also high-K, provided the first clear example of a Fermi Aligned s-band. The anomalous decay of the isomer itself is now explained. 11 refs., 1 tab., 3 figs

  4. Resolution of the 179W-isomer anomaly: Exposure of a Fermi-aligned s band

    International Nuclear Information System (INIS)

    Walker, P.M.; Dracoulis, G.D.; Byrne, A.P.; Fabricius, B.; Kibedi, T.; Stuchbery, A.E.; Department of Physics, University of Surrey, Guildford, GU2 5XH United Kingdom)

    1991-01-01

    The K π =35/2 - , five-quasiparticle isomer in 179 W is shown to decay into the region of a backbend in the 7/2 - [514] band, allowing for the first time the identification of a full set of aligned-band states. Destructive interference results from level mixing in the band-crossing region. The deduced γ-ray branching ratios are used to establish the mixing matrix elements and to show that the aligned band has a high value of the K quantum number. The properties of well-defined alignment and yet also high K provide the first clear example of a Fermi-aligned s band. The anomalous decay of the isomer itself is now explained

  5. The hierarchically organized splitting of chromosome bands into sub-bands analyzed by multicolor banding (MCB).

    Science.gov (United States)

    Lehrer, H; Weise, A; Michel, S; Starke, H; Mrasek, K; Heller, A; Kuechler, A; Claussen, U; Liehr, T

    2004-01-01

    To clarify the nature of chromosome sub-bands in more detail, the multicolor banding (MCB) probe-set for chromosome 5 was hybridized to normal metaphase spreads of GTG band levels at approximately 850, approximately 550, approximately 400 and approximately 300. It could be observed that as the chromosomes became shorter, more of the initial 39 MCB pseudo-colors disappeared, ending with 18 MCB pseudo-colored bands at the approximately 300-band level. The hierarchically organized splitting of bands into sub-bands was analyzed by comparing the disappearance or appearance of pseudo-color bands of the four different band levels. The regions to split first are telomere-near, centromere-near and in 5q23-->q31, followed by 5p15, 5p14, and all GTG dark bands in 5q apart from 5q12 and 5q32 and finalized by sub-band building in 5p15.2, 5q21.2-->q21.3, 5q23.1 and 5q34. The direction of band splitting towards the centromere or the telomere could be assigned to each band separately. Pseudo-colors assigned to GTG-light bands were resistant to band splitting. These observations are in concordance with the recently proposed concept of chromosome region-specific protein swelling. Copyright 2003 S. Karger AG, Basel

  6. Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

    Science.gov (United States)

    Su, Wei-tao; Yang, Li; Li, Bin

    2011-01-01

    A new ternary rare oxide dielectric LaYbO3 film had been prepared on silicon wafers and quartz substrates by reactive sputtering method using a La-Yb metal target. A range of analysis techniques was performed to determine the optical band gap, thermal stability, and electrical property of the deposited samples. It was found the band gap of LaYbO3 film was about 5.8 eV. And the crystallization temperature for rapid thermal annealing (20 s) was between 900 and 950 °C. X-ray photoelectron spectroscopy results indicate the formation of the SiO2 and silicate in the interface between silicon wafer and LaYbO3 film. The dielectric constant is about 23 from the calculation of capacitance-voltage curve, which is comparable higher than previously reported La2O3 or Yb2O3 film.

  7. Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

    International Nuclear Information System (INIS)

    Tang Zhen-Jie; Li Rong; Yin Jiang

    2013-01-01

    A composition-modulated (HfO 2 ) x (Al 2 O3) 1−x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO 2 ) x (Al 2 O 3 ) 1−x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  8. Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Kumar, Ashok, E-mail: ashok553@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Shukla, A. K. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Pulikkotil, J. J. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Computation and Networking Facility, CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2016-06-07

    The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

  9. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  10. Transfer-Free Fabrication of Graphene Scaffolds on High-k Dielectrics from Metal-Organic Oligomers.

    Science.gov (United States)

    Pang, Qingqing; Wang, Deyan; Wang, Xiuyan; Feng, Shaoguang; Clark, Michael B; Li, Qiaowei

    2016-09-28

    In situ fabrication of graphene scaffold-ZrO2 nanofilms is achieved by thermal annealing of Zr-based metal-organic oligomers on SiO2 substrates. The structural similarities of the aromatic moieties in the ligand (phenyl-, naphthyl-, anthryl-, and pyrenyl-) compared to graphene play a major role in the ordering of the graphene scaffolds obtained. The depth profiling analysis reveals ultrathin carbon-pure or carbon-rich surfaces of the graphene scaffold-ZrO2 nanofilms. The graphene scaffolds with ∼96.0% transmittance in the visible region and 4.8 nm in thickness can be grown with this non-chemical vapor deposition method. Furthermore, the heterogeneous graphene scaffold-ZrO2 nanofilms show a low sheet resistance of 17.0 kΩ per square, corresponding to electrical conductivity of 3197 S m(-1). The strategy provides a facile method to fabricate graphene scaffolds directly on high-k dielectrics without transferring process, paving the way for its application in fabricating electronic devices.

  11. Noise exposure in marching bands

    Science.gov (United States)

    Keefe, Joseph

    2005-09-01

    Previous studies involving orchestras have shown that music ensembles can produce hazardous noise levels. There are no similar data for marching bands and pep bands. In order to evaluate the noise levels produced by marching and pep bands, 1/3-octave-band sound-pressure levels were measured while these groups rehearsed and performed. Data were collected while marching with the bands to ensure a realistic environment. Comparing these data to OSHA and NIOSH criteria, marching and pep band exposures often exceed safe values. For typical exposures, OSHA doses range from 11% to 295%, while NIOSH doses range from 35% to 3055%. Exposures that would be considered hazardous in the workplace are common in marching and pep bands; students and band directors should take steps to recognize the risk posed by various instruments and various locations, and should implement hearing conservation efforts.

  12. Semiconductors bonds and bands

    CERN Document Server

    Ferry, David K

    2013-01-01

    As we settle into this second decade of the twenty-first century, it is evident that the advances in micro-electronics have truly revolutionized our day-to-day lifestyle. The technology is built upon semiconductors, materials in which the band gap has been engineered for special values suitable to the particular application. This book, written specifically for a one semester course for graduate students, provides a thorough understanding of the key solid state physics of semiconductors. It describes how quantum mechanics gives semiconductors unique properties that enabled the micro-electronics revolution, and sustain the ever-growing importance of this revolution.

  13. Collectivity of dipole bands in {sup 196}Pb

    Energy Technology Data Exchange (ETDEWEB)

    Carpenter, M.P.; Liang, Y.; Janssens, R.V.F. [and others

    1995-08-01

    The region of nuclei with mass {approximately} 190 was studied extensively over the last few years following the discovery of superdeformation in {sup 190}Hg. More recently, considerable interest in the neutron-deficient Pb isotopes developed with the discover of a number of bands at high spin connected by dipole transitions in both even {sup 192-200}Pb and odd {sup 197-201}Pb nuclei. The majority of the dipole bands are regular in character (i.e. transition energies increase smoothly with spin) while the remaining bands are referred to as irregular in character, due to the fact that the transition energies do not increase smoothly with spin. The properties of the dipole bands were interpreted in terms of high-K, moderately-deformed oblate states built on configurations involving high-J, shape-driving quasiproton excitations coupled to rotation-aligned quasineutrons. It was suggested that the difference between the regular and irregular dipole sequences is related to the deformation where the irregular sequences are thought to be less collective than their regular counterparts.

  14. Degenerate band edge laser

    Science.gov (United States)

    Veysi, Mehdi; Othman, Mohamed A. K.; Figotin, Alexander; Capolino, Filippo

    2018-05-01

    We propose a class of lasers based on a fourth-order exceptional point of degeneracy (EPD) referred to as the degenerate band edge (DBE). EPDs have been found in parity-time-symmetric photonic structures that require loss and/or gain; here we show that the DBE is a different kind of EPD since it occurs in periodic structures that are lossless and gainless. Because of this property, a small level of gain is sufficient to induce single-frequency lasing based on a synchronous operation of four degenerate Floquet-Bloch eigenwaves. This lasing scheme constitutes a light-matter interaction mechanism that leads also to a unique scaling law of the laser threshold with the inverse of the fifth power of the laser-cavity length. The DBE laser has the lowest lasing threshold in comparison to a regular band edge laser and to a conventional laser in cavities with the same loaded quality (Q ) factor and length. In particular, even without mirror reflectors the DBE laser exhibits a lasing threshold which is an order of magnitude lower than that of a uniform cavity laser of the same length and with very high mirror reflectivity. Importantly, this novel DBE lasing regime enforces mode selectivity and coherent single-frequency operation even for pumping rates well beyond the lasing threshold, in contrast to the multifrequency nature of conventional uniform cavity lasers.

  15. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

    International Nuclear Information System (INIS)

    Rahi Shiromani Balmukund; Asthana Pranav; Ghosh Bahniman

    2014-01-01

    We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate = 4.2 eV, gate1 = 5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10 −6 A/μm, the off current remains as low as 9.1 × 10 −14 A/μm. So I ON /I OFF ratio of ≃ 10 8 is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO 2 gate material. (semiconductor devices)

  16. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  17. A multitude of rotational bands in {sup 163}Er and their mutual interaction

    Energy Technology Data Exchange (ETDEWEB)

    Bosetti, P.; Leoni, S.; Bracco, A. [Univ. of Milan (Italy)] [and others

    1996-12-31

    Using the {sup 150}Nd({sup 18}O, 5n){sup 163}Er reaction a multitude of rotational bands have been established with firm spin and parity assignments in {sup 163}Er. In 16 out of {approximately} 23 band crossings E2 cross-band transitions have been observed. The interaction strength varies between {approximately} 1 and {approximately} 50 keV. These interactions sample a variety of the lowest (multi)-quasiparticle configurations. Some of the band configurations, in particular those with high K-values, can be rather well established. Quite complicated changes in the wavefunctions must occur at these crossings, and, to explain the observed interaction strengths, one may have to invoke coupling to various vibrational degrees of freedom, in addition to possible residual neutron-proton interactions.

  18. Wide band ENDOR spectrometer

    International Nuclear Information System (INIS)

    Mendonca Filho, C.

    1973-01-01

    The construction of an ENDOR spectrometer operating from 0,5 to 75 MHz within a single band, with ore Klystron and homodine detection, and no fundamental changes on the electron spin resonance spectrometer was described. The ENDOR signal can be detected both by amplitude modulation of the frequency field, or direct detection of the ESR output, which is taken to a signal analyser. The signal-to-noise ratio is raised by averaging rather than filtering avoiding the use of long time constants, providing natural line widths. The experimental apparatus and the spectra obtained are described. A discussion, relating the ENDOR line amplitudes with the experimental conditions is done and ENDOR mechanism, in which there is a relevant presence of cross relaxation is proposed

  19. Electronic band structure

    International Nuclear Information System (INIS)

    Grosso, G.

    1986-01-01

    The aim of this chapter is to present, in detail, some theoretical methods used to calculate electronic band structures in crystals. The basic strategies employed to attack the problem of electronic-structure calculations are presented. Successive sections present the basic formulations of the tight-binding, orthogonalized-plane-wave, Green'sfunction, and pseudopotential methods with a discussion of their application to perfect solids. Exemplifications in the case of a few selected problems provide further insight by the author into the physical aspects of the different methods and are a guide to the use of their mathematical techniques. A discussion is offered of completely a priori Hartree-Fock calculations and attempts to extend them. Special aspects of the different methods are also discussed in light of recently published related work

  20. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  1. Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide

    International Nuclear Information System (INIS)

    Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Testsu

    2012-01-01

    The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al 2 O 3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al 2 O 3 ) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10 -10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al 2 O 3 ) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.

  2. From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

    2014-01-01

    -dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high- k waves...

  3. Collective dipole rotational bands in the A {approx} 200 region

    Energy Technology Data Exchange (ETDEWEB)

    Clark, R M; Wadsworth, R; Regan, P H [York Univ. (United Kingdom). Dept. of Physics; Paul, E S; Beausang, C W; Ali, I; Cullen, D M; Dagnall, P J; Fallon, P; Joyce, M J; Sharpey-Schafer, J F [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.; Astier, A; Meyer, M; Redon, N [Lyon-1 Univ., 69 - Villeurbanne (France). Inst. de Physique Nucleaire; Nazakewicz, W; Wyss, R [Joint Inst. for Heavy Ion Research, Oak Ridge, TN (United States)

    1992-08-01

    Rotational oblate bands consisting of regular sequences of magnetic dipole transitions have recently been identified in {sup 196-200}Pb. Their observation indicates a drastic change in the high-spin configurations between the Hg, Tl and {sup 194}Pb nuclei, in which SD bands are clearly observed, and the heavier Pb isotopes, where these weakly deformed oblate structures see to dominate. Angular correlation ratios show the transitions to be dipoles. Their magnetic nature can be deduced from intensity measurements, and they are characterized by small dynamic moments of inertia. Several of the bands have been interpreted as being built on high-K two-proton configurations coupled to an aligned pair of i{sub 13/2} neutrons in the even A nuclei, and to either one or three i{sub 13/2} neutrons in the odd A nuclei. Cranked shell model calculations predict the alignment of a pair of i{sub 13/2} neutrons (the AB crossing) at {omega} {approx} 0.18 MeV{Dirac_h}{sub -1}. The higher frequency crossing at {omega} {approx} 0.4 MeV{Dirac_h}{sub -1} may be due to the alignment of f{sub 5/2} neutrons, h{sub 11/2} protons, or both. 17 refs., 4 figs.

  4. Report from the banding lab

    Science.gov (United States)

    Tautin, J.

    1995-01-01

    Mr. Tautin reported on the seemingly everchanging structure of biological science units within the Interior Department. Current Congressional proposals would either change the name of the Bird Banding Lab's parent agency or make it part of the Geological Survey. The current Congress has not looked favorably on science budgets within the Interior Department, and the Banding Lab's budget is being squeezed ever tighter.

  5. Dual-band infrared camera

    Science.gov (United States)

    Vogel, H.; Schlemmer, H.

    2005-10-01

    Every year, numerous accidents happen on European roads due to bad visibility (fog, night, heavy rain). Similarly, the dramatic aviation accidents of year 2001 in Milan and Zurich have reminded us that aviation safety is equally affected by reduced visibility. A dual-band thermal imager was developed in order to raise human situation awareness under conditions of reduced visibility especially in the automotive and aeronautical context but also for all transportation or surveillance tasks. The chosen wavelength bands are the Short Wave Infrared SWIR and the Long Wave Infrared LWIR band which are less obscured by reduced visibility conditions than the visible band. Furthermore, our field tests clearly show that the two different spectral bands very often contain complementary information. Pyramidal fusion is used to integrate complementary and redundant features of the multi-spectral images into a fused image which can be displayed on a monitor to provide more and better information for the driver or pilot.

  6. SINGLE-BAND, TRIPLE-BAND, OR MULTIPLE-BAND HUBBARD MODELS

    NARCIS (Netherlands)

    ESKES, H; SAWATZKY, GA

    1991-01-01

    The relevance of different models, such as the one-band t-J model and the three-band Emery model, as a realistic description of the electronic structure of high-T(c) materials is discussed. Starting from a multiband approach using cluster calculations and an impurity approach, the following

  7. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Science.gov (United States)

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  8. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    Science.gov (United States)

    Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

    2016-02-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

  9. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    International Nuclear Information System (INIS)

    Liu Chaowen; Xu Jingping; Liu Lu; Lu Hanhan; Huang Yuan

    2016-01-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

  10. The 3 micron ice band

    International Nuclear Information System (INIS)

    Greenberg, J.M.; Bult, C.E.P.M. van de

    1984-01-01

    Ever since it was proposed that H 2 O could be a dominant constituent of interstellar grains, its detection, or lack thereof, has played a large role in theories of grains and their evolution. It now appears possible to provide a basic theoretical structure for the evolution of grains in molecular clouds based on current observational evidence and laboratory experiments on the ice band. Both band strengths and shapes can be reasonably predicted by grain models. (U.K.)

  11. Superdeformed bands in 130Ce

    International Nuclear Information System (INIS)

    Paul, E.S.; Semple, A.T.; Boston, A.J.; Joss, D.T.; Nolan, P.J.; Shepherd, S.L.

    1997-01-01

    Four superdeformed bands have been assigned to 130 Ce following a high-statistics γ-ray study using the EUROGAM II spectrometer. The strongest band exhibits two distinct backbends which, in one scenario, may be interpreted as crossings between high-j N = 6 neutron orbitals (νi 13/2 ) and low-j N = 4 orbitals (νd 3/2 ) in an unpaired system. (author)

  12. Dipole Bands in 196Hg

    International Nuclear Information System (INIS)

    Lawrie, J. J.; Lawrie, E. A.; Newman, R. T.; Sharpey-Schafer, J. F.; Smit, F. D.; Msezane, B.; Benatar, M.; Mabala, G. K.; Mutshena, K. P.; Federke, M.; Mullins, S. M.; Ncapayi, N. J.; Vymers, P.

    2011-01-01

    High spin states in 196 Hg have been populated in the 198 Pt(α,6n) reaction at 65 MeV and the level scheme has been extended. A new dipole band has been observed and a previously observed dipole has been confirmed. Excitation energies, spins and parities of these bands were determined from DCO ratio and linear polarization measurements. Possible quasiparticle excitations responsible for these structures are discussed.

  13. New high spin states and band termination in 83Y and 84Zr

    International Nuclear Information System (INIS)

    Johnson, T.D.; Aprahamian, A.; Lister, C.J.; Blumenthal, D.J.; Crowell, B.; Chowdhury, P.; Fallon, P.; Machiavelli, A.O.

    1997-01-01

    The gamma decay of high spin yrast states in 83 Y up to I π =59/2 + and 53/2 - have been observed using the reaction 58 Ni( 29 Si,3p) at 110 MeV and the Gammasphere Early Implementation Array. The level scheme has been substantially extended due to the observations of several new transitions in all of the bands. A sequence of transitions feeding into the positive parity yrast band above I π =47/2 + seems to be consistent with a noncollective oblate structure expected at these high spins. A similar cascade is found in the data for 84 Zr. A new forking of the favored negative parity band is found which may be due to neutron alignment polarizing the core to a different shape. This suggests that the open-quotes isomeric close-quote close-quote band in 83 Y, for which one more connecting transition was found, is of a similar nature to other high-K bands found in this region. Lifetime measurements in the unfavored negative parity band are consistent with cranking calculations which predict a nearly oblate shape with a deformation parameter β 2 ∼0.2. A qualitative analysis of line shapes at very high spins suggests the persistence of collectivity in the yrast sequence to the highest excitations seen. copyright 1997 The American Physical Society

  14. New high spin states and band termination in {sup 83}Y and {sup 84}Zr

    Energy Technology Data Exchange (ETDEWEB)

    Johnson, T.D.; Aprahamian, A. [University of Notre Dame, Notre Dame, Indiana 46556 (United States); Lister, C.J.; Blumenthal, D.J.; Crowell, B. [Argonne National Laboratory, Argonne, Illinois 60439 (United States); Chowdhury, P. [University of Massachusetts, Lowell, Massachusetts 01854 (United States); Fallon, P.; Machiavelli, A.O. [Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)

    1997-03-01

    The gamma decay of high spin yrast states in {sup 83}Y up to I{sup {pi}}=59/2{sup +} and 53/2{sup {minus}} have been observed using the reaction {sup 58}Ni({sup 29}Si,3p) at 110 MeV and the Gammasphere Early Implementation Array. The level scheme has been substantially extended due to the observations of several new transitions in all of the bands. A sequence of transitions feeding into the positive parity yrast band above I{sup {pi}}=47/2{sup +} seems to be consistent with a noncollective oblate structure expected at these high spins. A similar cascade is found in the data for {sup 84}Zr. A new forking of the favored negative parity band is found which may be due to neutron alignment polarizing the core to a different shape. This suggests that the {open_quotes}isomeric{close_quote}{close_quote} band in {sup 83}Y, for which one more connecting transition was found, is of a similar nature to other high-K bands found in this region. Lifetime measurements in the unfavored negative parity band are consistent with cranking calculations which predict a nearly oblate shape with a deformation parameter {beta}{sub 2}{approx}0.2. A qualitative analysis of line shapes at very high spins suggests the persistence of collectivity in the yrast sequence to the highest excitations seen. {copyright} {ital 1997} {ital The American Physical Society}

  15. Single-Band and Dual-Band Infrared Detectors

    Science.gov (United States)

    Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor); Soibel, Alexander (Inventor); Nguyen, Jean (Inventor); Khoshakhlagh, Arezou (Inventor)

    2017-01-01

    Bias-switchable dual-band infrared detectors and methods of manufacturing such detectors are provided. The infrared detectors are based on a back-to-back heterojunction diode design, where the detector structure consists of, sequentially, a top contact layer, a unipolar hole barrier layer, an absorber layer, a unipolar electron barrier, a second absorber, a second unipolar hole barrier, and a bottom contact layer. In addition, by substantially reducing the width of one of the absorber layers, a single-band infrared detector can also be formed.

  16. Adhesives for fixed orthodontic bands.

    Science.gov (United States)

    Millett, Declan T; Glenny, Anne-Marie; Mattick, Rye Cr; Hickman, Joy; Mandall, Nicky A

    2016-10-25

    Orthodontic treatment involves using fixed or removable appliances (dental braces) to correct the positions of teeth. It has been shown that the quality of treatment result obtained with fixed appliances is much better than with removable appliances. Fixed appliances are, therefore, favoured by most orthodontists for treatment. The success of a fixed orthodontic appliance depends on the metal attachments (brackets and bands) being attached securely to the teeth so that they do not become loose during treatment. Brackets are usually attached to the front and side teeth, whereas bands (metal rings that go round the teeth) are more commonly used on the back teeth (molars). A number of adhesives are available to attach bands to teeth and it is important to understand which group of adhesives bond most reliably, as well as reducing or preventing dental decay during the treatment period. To evaluate the effectiveness of the adhesives used to attach bands to teeth during fixed appliance treatment, in terms of:(1) how often the bands come off during treatment; and(2) whether they protect the banded teeth against decay during fixed appliance treatment. The following electronic databases were searched: Cochrane Oral Health's Trials Register (searched 2 June 2016), Cochrane Central Register of Controlled Trials (CENTRAL; 2016, Issue 5) in the Cochrane Library (searched 2 June 2016), MEDLINE Ovid (1946 to 2 June 2016) and EMBASE Ovid (1980 to 2 June 2016). We searched ClinicalTrials.gov and the World Health Organization International Clinical Trials Registry Platform for ongoing trials. No restrictions were placed on the language or date of publication when searching the electronic databases. Randomised and controlled clinical trials (RCTs and CCTs) (including split-mouth studies) of adhesives used to attach orthodontic bands to molar teeth were selected. Patients with full arch fixed orthodontic appliance(s) who had bands attached to molars were included. All review authors

  17. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    International Nuclear Information System (INIS)

    Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

    2007-01-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

  18. Fast-switching optically isotropic liquid crystal nano-droplets with improved depolarization and Kerr effect by doping high k nanoparticles.

    Science.gov (United States)

    Kim, Byeonggon; Kim, Hyun Gyu; Shim, Gyu-Yeop; Park, Ji-Sub; Joo, Kyung-Il; Lee, Dong-Jin; Lee, Joun-Ho; Baek, Ji-Ho; Kim, Byeong Koo; Choi, Yoonseuk; Kim, Hak-Rin

    2018-01-10

    We proposed and analyzed an optically isotropic nano-droplet liquid crystal (LC) doped with high k nanoparticles (NPs), exhibiting enhanced Kerr effects, which could be operated with reduced driving voltages. For enhancing the contrast ratio together with the light efficiencies, the LC droplet sizes were adjusted to be shorter than the wavelength of visible light to reduce depolarization effects by optical scattering of the LC droplets. Based on the optical analysis of the depolarization effects, the influence of the relationship between the LC droplet size and the NP doping ratio on the Kerr effect change was investigated.

  19. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-03-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  20. 2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

    Science.gov (United States)

    Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

    2018-02-01

    This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

  1. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao

    2010-01-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  2. Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors.

    Science.gov (United States)

    Adhikari, Jwala M; Gadinski, Matthew R; Li, Qi; Sun, Kaige G; Reyes-Martinez, Marcos A; Iagodkine, Elissei; Briseno, Alejandro L; Jackson, Thomas N; Wang, Qing; Gomez, Enrique D

    2016-12-01

    A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

    Science.gov (United States)

    Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-01-01

    The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

  4. Laser Direct Writing Process for Making Electrodes and High-k Sol-Gel ZrO2 for Boosting Performances of MoS2 Transistors.

    Science.gov (United States)

    Kwon, Hyuk-Jun; Jang, Jaewon; Grigoropoulos, Costas P

    2016-04-13

    A series of two-dimensional (2D) transition metal dichalcogenides (TMDCs), including molybdenum disulfide (MoS2), can be attractive materials for photonic and electronic applications due to their exceptional properties. Among these unique properties, high mobility of 2D TMDCs enables realization of high-performance nanoelectronics based on a thin film transistor (TFT) platform. In this contribution, we report highly enhanced field effect mobility (μ(eff) = 50.1 cm(2)/(V s), ∼2.5 times) of MoS2 TFTs through the sol-gel processed high-k ZrO2 (∼22.0) insulator, compared to those of typical MoS2/SiO2/Si structures (μ(eff) = 19.4 cm(2)/(V s)) because a high-k dielectric layer can suppress Coulomb electron scattering and reduce interface trap concentration. Additionally, in order to avoid costly conventional mask based photolithography and define the patterns, we employ a simple laser direct writing (LDW) process. This process allows precise and flexible control with reasonable resolution (up to ∼10 nm), depending on the system, and enables fabrication of arbitrarily patterned devices. Taking advantage of continuing developments in laser technology offers a substantial cost decrease, and LDW may emerge as a promising technology.

  5. 47 CFR 90.531 - Band plan.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Band plan. 90.531 Section 90.531...-805 MHz Bands § 90.531 Band plan. This section sets forth the band plan for the 763-775 MHz and 793... and portables subject to Commission-approved regional planning committee regional plans. Transmitter...

  6. Metaphyseal bands in osteogenesis imperfecta

    Directory of Open Access Journals (Sweden)

    Suresh S

    2010-01-01

    Full Text Available An increasing number of patients with osteogenesis imperfecta are undergoing pamidronate therapy to prevent the incidence of fragility fractures. The authors herein report a child aged 3 years who received five cycles of pamidronate, resulting in metaphyseal bands, known as "zebra lines."

  7. Metaphyseal bands in osteogenesis imperfecta

    International Nuclear Information System (INIS)

    Suresh, SS; Thomas, John K

    2010-01-01

    An increasing number of patients with osteogenesis imperfecta are undergoing pamidronate therapy to prevent the incidence of fragility fractures. The authors herein report a child aged 3 years who received five cycles of pamidronate, resulting in metaphyseal bands, known as “zebra lines.”

  8. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

    Science.gov (United States)

    Uedono, A.; Inumiya, S.; Matsuki, T.; Aoyama, T.; Nara, Y.; Ishibashi, S.; Ohdaira, T.; Suzuki, R.; Miyazaki, S.; Yamada, K.

    2007-09-01

    Vacancy-fluorine complexes in metal-oxide semiconductors (MOS) with high-k gate dielectrics were studied using a positron annihilation technique. F+ ions were implanted into Si substrates before the deposition of gate dielectrics (HfSiON). The shift of threshold voltage (Vth) in MOS capacitors and an increase in Fermi level position below the HfSiON/Si interface were observed after F+ implantation. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured before and after HfSiON fabrication processes. From a comparison between Doppler broadening spectra and those obtained by first-principles calculation, the major defect species in Si substrates after annealing treatment (1050 °C, 5 s) was identified as vacancy-fluorine complexes (V3F2). The origin of the Vth shift in the MOS capacitors was attributed to V3F2 located in channel regions.

  9. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    International Nuclear Information System (INIS)

    Zhang ShuXiang; Yang Hong; Tang Bo; Tang Zhaoyun; Xu Yefeng; Xu Jing; Yan Jiang

    2014-01-01

    ALD HfO 2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D and A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D and A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme. (semiconductor technology)

  10. Identical and shifted identical bands

    International Nuclear Information System (INIS)

    Dodder, R.S; Jones, E.F.; Hamilton, J.H.

    1997-01-01

    Spontaneous fission of 252 Cm was studied with 72 large Compton suppressed Ge detectors in Gamma sphere. New isotopes 160 Sm and 162 Gd were identified. Through X-ray-γ and γ-γ-γ) coincidence measurements, level energies were established to spins 14 + to 20 + in 152 , 154 156 60 Nd 92 94 96 , 156 , 158 , 160 62 Sm 94 , 96 , 98 , and 160 , 162 64 Gd 96 , 98 . These nuclei exhibit a remarkable variety of identical bands and bands where the energies and moments of inertia are shifted by the same constant amount for every spin state from 2 + to 12 + for various combinations of nuclei differing by 2n, 4n, 2p, 4p, and α

  11. Effects of the TiO2 high-k insulator material on the electrical characteristics of GaAs based Schottky barrier diodes

    Science.gov (United States)

    Zellag, S.; Dehimi, L.; Asar, T.; Saadoune, A.; Fritah, A.; Özçelik, S.

    2018-01-01

    The effects of the TiO2 high-k insulator material on Au/n-GaAs/Ti/Au Schottky barrier diodes have been studied by means of the numerical simulation and experimental results at room temperature. The Atlas-Silvaco-TCAD numerical simulator has been used to explain the behavior of different physical phenomena of Schottky diode. The experimental values of ideality factor, barrier height, and series resistance have been determined by using the various techniques such as Cheung's method, forward bias ln I- V and reverse capacitance-voltage behaviors. The experimental ideality factor and barrier height values have been found to be 4.14 and 0.585 eV for Au/n-GaAs/Ti/Au Schottky barrier diode and 4.00 and 0.548 eV for that structure with 16 nm thick TiO2 film and 3.92, 0.556 eV with 100 nm thick TiO2 film. The diodes show a non-ideal current-voltage behavior that of the ideality factor so far from unity. The extraction of N ss interface distribution profile as a function of E c -E ss is made using forward-bias I- V measurement by considering the bias dependence of ideality factor, the effective barrier height, and series resistance for Schottky barrier diodes. The N ss calculated values with consideration of the series resistance are lower than the calculated ones without series resistance. The current-voltage results of diodes reveal an abnormal increase in leakage current with an increase in thickness of high-k interfacial insulator layer. However, the simulation agrees in general with the experimental results.

  12. Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

    International Nuclear Information System (INIS)

    Lee, Se-Won; Cho, Won-Ju

    2012-01-01

    The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

  13. NCenter wide band neutrino beam

    International Nuclear Information System (INIS)

    Stutte, L.G.

    1985-01-01

    This memo describes the physical properties of the currently operating N-Center wide band neutrino beam---commonly called the triplet train, following a past tradition of a triplet lens configuration. In reality, in order to gain a larger momentum acceptance and to minimize the angular divergence of the beam, a quadruplet beam (4 lenses) employing point-to-parallel optics at a central momentum of 300 GeV was built. 6 refs., 13 figs., 1 tab

  14. [Gastric band erosion: Alternative management].

    Science.gov (United States)

    Echaverry-Navarrete, Denis José; Maldonado-Vázquez, Angélica; Cortes-Romano, Pablo; Cabrera-Jardines, Ricardo; Mondragón-Pinzón, Erwin Eduardo; Castillo-González, Federico Armando

    2015-01-01

    Obesity is a public health problem, for which the prevalence has increased worldwide at an alarming rate, affecting 1.7 billion people in the world. To describe the technique employed in incomplete penetration of gastric band where endoscopic management and/or primary closure is not feasible. Laparoscopic removal of gastric band was performed in five patients with incomplete penetrance using Foley catheterization in the perforation site that could lead to the development of a gastro-cutaneous fistula. The cases presented include a leak that required surgical lavage with satisfactory outcome, and one patient developed stenosis 3 years after surgical management, which was resolved endoscopically. In all cases, the penetration site closed spontaneously. Gastric band erosion has been reported in 3.4% of cases. The reason for inserting a catheter is to create a controlled gastro-cutaneous fistula, allowing spontaneous closure. Various techniques have been described: the totally endoscopic, hybrid techniques (endoscopic/laparoscopic) and completely laparoscopic. A technique is described here that is useful and successful in cases where the above-described treatments are not viable. Copyright © 2015. Published by Masson Doyma México S.A.

  15. More on Estimation of Banded and Banded Toeplitz Covariance Matrices

    OpenAIRE

    Berntsson, Fredrik; Ohlson, Martin

    2017-01-01

    In this paper we consider two different linear covariance structures, e.g., banded and bended Toeplitz, and how to estimate them using different methods, e.g., by minimizing different norms. One way to estimate the parameters in a linear covariance structure is to use tapering, which has been shown to be the solution to a universal least squares problem. We know that tapering not always guarantee the positive definite constraints on the estimated covariance matrix and may not be a suitable me...

  16. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  17. High macro rubber band ligature

    Directory of Open Access Journals (Sweden)

    José A. Reis Neto

    2013-07-01

    Full Text Available Purpose: The goal of a rubber band ligature is to promote fibrosis of the submucosa with subsequent fixation of the anal epithelium to the underlying sphincter. Following this principle, a new technique of ligature was developed based on two aspects: 1. macro banding: to have a better fibrosis and fixation by banding a bigger volume of mucosa and 2. higher ligature: to have this fixation at the origin of the hemorrhoidal cushion displacement. Methods: 1634 patients with internal hemorrhoidal disease grade II or III were treated by the technique called high macro rubber band. There was no distinction as to age, gender or race. To perform this technique a new hemorrhoidal device was specially designed with a larger diameter and a bigger capacity for mucosal volume aspiration. It is recommended to utilize a longer and wider anoscope to obtain a better view of the anal canal, which will facilitate the injection of submucosa higher in the anal canal and the insertion of the rubber band device. The hemorrhoidal cushion must be banded higher in the anal canal (4 cm above the pectinate line. It is preferable to treat all the hemorrhoids in one single session (maximum of three areas banded. Results: The analysis was retrospective without any comparison with conventional banding. The period of evaluation extended from one to twelve years. The analysis of the results showed perianal edema in 1.6% of the patients, immediate tenesmus in 0.8%, intense pain (need for parenteral analgesia in 1.6%, urinary retention in 0.1% of the patients and a symptomatic recurrence rate of 4.2%. All patients with symptomatic recurrence were treated with a new session of macro rubber banding. None of the patients developed anal or rectal sepsis. Small post-ligature bleeding was observed only in 0.8% of the patients. Conclusions: The high macro rubber banding technique represents an alternative method for the treatment of hemorrhoidal disease grades II or III, with good

  18. Band Subset Selection for Hyperspectral Image Classification

    Directory of Open Access Journals (Sweden)

    Chunyan Yu

    2018-01-01

    Full Text Available This paper develops a new approach to band subset selection (BSS for hyperspectral image classification (HSIC which selects multiple bands simultaneously as a band subset, referred to as simultaneous multiple band selection (SMMBS, rather than one band at a time sequentially, referred to as sequential multiple band selection (SQMBS, as most traditional band selection methods do. In doing so, a criterion is particularly developed for BSS that can be used for HSIC. It is a linearly constrained minimum variance (LCMV derived from adaptive beamforming in array signal processing which can be used to model misclassification errors as the minimum variance. To avoid an exhaustive search for all possible band subsets, two numerical algorithms, referred to as sequential (SQ and successive (SC algorithms are also developed for LCMV-based SMMBS, called SQ LCMV-BSS and SC LCMV-BSS. Experimental results demonstrate that LCMV-based BSS has advantages over SQMBS.

  19. The DSS-14 C-band exciter

    Science.gov (United States)

    Rowan, D. R.

    1989-01-01

    The development and implementation of a C-band exciter for use with the Block IV Receiver-Exciter Subsystem at Deep Space Station 14 (DSS-14) has been completed. The exciter supplements the standard capabilities of the Block IV system by providing a drive signal for the C-band transmitter while generating coherent translation frequencies for C-band (5-GHz) to S-band (2.2- to 2.3-GHz) Doppler extraction, C-band to L-band (1.6-GHz) zero delay measurements, and a level calibrated L-band test signal. Exciter functions are described, and a general explanation and description of the C-band uplink controller is presented.

  20. Study of rotational band in 111Sn

    International Nuclear Information System (INIS)

    Ganguly, S.; Banerjee, P.; Ray, I.; Kshetri, R.; Raut, R.; Goswami, A.; Saha Sarkar, M.; Bhattacharya, S.; Mukherjee, A.; Mukherjee, G.; Basu, S.K.; Mukhopadhyay, S.

    2006-01-01

    The motivation of the present work is to study the negative-parity rotational band in 111 Sn. Study of the lifetimes of the states of the rotational band is expected to provide information on their structures as well as the band termination phenomenon

  1. Prenatal diagnosis of amniotic band syndrome

    Directory of Open Access Journals (Sweden)

    Laxmi Devi Padmanabhan

    2016-01-01

    Full Text Available Amniotic band can cause a broad spectrum of anomalies ranging from simple band constrictions to major craniofacial and visceral defects. It can cause significant neonatal morbidity. Accurate diagnosis will help in the management of the present pregnancy and in counseling with regard to future pregnancies. Here we report three cases of amniotic band syndrome detected in the prenatal period.

  2. Complex band structure and electronic transmission eigenchannels

    DEFF Research Database (Denmark)

    Jensen, Anders; Strange, Mikkel; Smidstrup, Soren

    2017-01-01

    and complex band structure, in this case individual eigenchannel transmissions and different complex bands. We present calculations of decay constants for the two most conductive states as determined by complex band structure and standard DFT Landauer transport calculations for one semi-conductor and two...

  3. High-energy band structure of gold

    DEFF Research Database (Denmark)

    Christensen, N. Egede

    1976-01-01

    The band structure of gold for energies far above the Fermi level has been calculated using the relativistic augmented-plane-wave method. The calculated f-band edge (Γ6-) lies 15.6 eV above the Fermi level is agreement with recent photoemission work. The band model is applied to interpret...

  4. Multi-band Modelling of Appearance

    DEFF Research Database (Denmark)

    Stegmann, Mikkel Bille; Larsen, Rasmus

    2003-01-01

    the appearance of both derived feature bands and an intensity band. As a special case of feature-band augmented appearance modelling we propose a dedicated representation with applications to face segmentation. The representation addresses a major problem within face recognition by lowering the sensitivity...

  5. Multi-band Modelling of Appearance

    DEFF Research Database (Denmark)

    Stegmann, Mikkel Bille; Larsen, Rasmus

    2002-01-01

    the appearance of both derived feature bands and an intensity band. As a special case of feature-band augmented appearance modelling we propose a dedicated representation with applications to face segmentation. The representation addresses a major problem within face recognition by lowering the sensitivity...

  6. High-k materials in the electrolyte/insulator/silicon configuration. Characterization and application in bio-electronics; Hoch-k-Materialien in der Elektrolyt/Isolator/Silizium-Konfiguration. Charakterisierung und Anwendung in der Bioelektronik

    Energy Technology Data Exchange (ETDEWEB)

    Wallrapp, F

    2006-12-19

    In order to elicit action potentials in nerve cells adhered on electrodes, a certain current is required across the electrode. Electrochemical reactions may cause damage to cells and electrodes. This is evaded by using silicon electrodes which are insulated by a dielectric. In doing so, only capacitive current is flowing, and electrochemical are avoided. The aim of this work was to fabricate novel stimulation chips exhibiting an enhanced capacitance which render new biological applications possible. These chips were to be characterized and used for the stimulation of cells. The formerly used dielectric SiO{sub 2} was replaced by HfO{sub 2} and TiO{sub 2}, with both of them featuring a higher dielectric constant. They were deposited on the silicon substrate by ALD (atomic layer deposition). The chips were characterized in the electrolyte/insulator/semiconductor (EIS) configuration. Owing to the low leakage current of the EIS configuration, the characterization of the high-k materials was possible in more detail as compared to using a metallic top contact (MIS configuration). The voltage-dependent capacitances of the HfO{sub 2} films could be interpreted by means of a common metal/SiO{sub 2}/silicon system. In contrast, the TiO{sub 2} films exhibited interesting properties which could only be rationalized with the help of numerical calculations assuming free electrons in the TiO{sub 2}. The low-lying conduction band of TiO{sub 2} caused accumulation of electrons within the TiO{sub 2} for certain voltages, which led to an enhanced capacitance. The effects of high voltages, frequency, film thickness and interlayer composition were examined and brought into compliance with the model. The novel TiO{sub 2} stimulation devices featured a five-fold capacitance increase as compared to former SiO{sub 2} chips. Using them, two fundamental stimulation mechanisms were induced in HEK293 cells expressing the recombinant potassium channel Kv1.3: Opening of ion channels and

  7. Evidence for dipolar bands in mercury isotopes using EUROGAM multi-detector

    International Nuclear Information System (INIS)

    Le Coz, Y.

    1995-01-01

    This thesis is devoted to the study of nuclear structure around mass A 190 and in particular, to the search of oblate rotational dipole bands in mercury isotopes. The reactions used to populate high spin states in 192 Hg and 193 Hg were 160 Gd ( 36 S,n) 192 Hg and 150 Nd( 48 Ca, 5n) 193 Hg at beam energies of 159 and 213 MeV. Gamma-rays have been detected using the EUROGAM phase I array. Level schemes of those two nuclei have been extended up to an excitation energy of about 10 MeV and approximately spin 35h. In 192 Hg, two new dipole bands have been observed. Those two structures, as well as two similar structures in 193 Hg, have been connected to the low-lying states; so, excitation energy and bandhead spin of those bands have been deduced. Angular distribution and correlation analysis (specific to EUROGRAM phase I) have confirmed that the transitions are dipoles. After a general presentation of dipole bands in this A = 190 mass region, experimental results are compared with mean-field Hartree-Fock + BCS calculations, using the rotor plus quasi-particles model. The results are consistent with weakly oblate structures based on configurations which involve high-K proton orbitals driving the nucleus to an oblate shape. (author). 81 refs., 47 figs., 8 tabs., 4 ann

  8. L-band brightness temperature disaggregation for use with S-band and C-band radiometer data for WCOM

    Science.gov (United States)

    Yao, P.; Shi, J.; Zhao, T.; Cosh, M. H.; Bindlish, R.

    2017-12-01

    There are two passive microwave sensors onboard the Water Cycle Observation Mission (WCOM), which includes a synthetic aperture radiometer operating at L-S-C bands and a scanning microwave radiometer operating from C- to W-bands. It provides a unique opportunity to disaggregate L-band brightness temperature (soil moisture) with S-band C-bands radiometer data. In this study, passive-only downscaling methodologies are developed and evaluated. Based on the radiative transfer modeling, it was found that the TBs (brightness temperature) between the L-band and S-band exhibit a linear relationship, and there is an exponential relationship between L-band and C-band. We carried out the downscaling results by two methods: (1) downscaling with L-S-C band passive measurements with the same incidence angle from payload IMI; (2) downscaling with L-C band passive measurements with different incidence angle from payloads IMI and PMI. The downscaling method with L-S bands with the same incident angle was first evaluated using SMEX02 data. The RMSE are 2.69 K and 1.52 K for H and V polarization respectively. The downscaling method with L-C bands is developed with different incident angles using SMEX03 data. The RMSE are 2.97 K and 2.68 K for H and V polarization respectively. These results showed that high-resolution L-band brightness temperature and soil moisture products could be generated from the future WCOM passive-only observations.

  9. Collective oblate dipole rotational bands in 198Pb

    International Nuclear Information System (INIS)

    Clark, R.M.; Wadsworth, R.; Paul, E.S.; Beausang, C.W.; Ali, I.; Astier, A.; Cullen, D.M.; Dagnall, P.J.; Fallon, P.; Joyce, M.J.; Meyer, M.; Redon, N.; Regan, P.H.; Sharpey-Schafer, J.F.; Nazarewicz, W.; Wyss, R.

    1993-01-01

    The nucleus 198 Pb was populated via the 186 W( 17 O, 5n) 198 Pb reaction at beam energies of 92 and 98 MeV. Five collective rotational cascades of ΔI=1 transitions have been found. Four are highly regular, one much more irregular. The structures are incorporated into a level scheme which extends up to approximately spin 32 h and an excitation energy of about 10 MeV. Angular correlation measurements confirm the dipole character of the interband transitions. Their M1 multipolarity is inferred, and from this supposition the experimental data are interpreted in terms of oblate high-K two quasiproton configurations coupled to aligned neutron excitations. This interpretation is extended to include other ΔI=1 oblate structures observed in 194-201 Pb. It is shown that the pattern of observed moments of inertia can be understood in the simple unpaired picture involving neutron i 13/2 excitations. The identical bands observed are interpreted in terms of the normal-parity weakly-coupled singlet orbital. (orig.)

  10. Thematic mapper studies band correlation analysis

    Science.gov (United States)

    Ungar, S. G.; Kiang, R.

    1976-01-01

    Spectral data representative of thematic mapper candidate bands 1 and 3 to 7 were obtained by selecting appropriate combinations of bands from the JSC 24 channel multispectral scanner. Of all the bands assigned, only candidate bands 4 (.74 mu to .80 mu) and 5 (.80 mu to .91 mu) showed consistently high intercorrelation from region to region and time to time. This extremely high correlation persisted when looking at the composite data set in a multitemporal, multilocation domain. The GISS investigations lend positive confirmation to the hypothesis, that TM bands 4 and 5 are redundant.

  11. Dust bands in the asteroid belt

    International Nuclear Information System (INIS)

    Sykes, M.V.; Greenberg, R.; Dermott, S.F.; Nicholson, P.D.; Burns, J.A.

    1989-01-01

    This paper describes the original IRAS observations leading to the discovery of the three dust bands in the asteroid belt and the analysis of data. Special attention is given to an analytical model of the dust band torus and to theories concerning the origin of the dust bands, with special attention given to the collisional equilibrium (asteroid family), the nonequilibrium (random collision), and the comet hypotheses of dust-band origin. It is noted that neither the equilibrium nor nonequilibrium models, as currently formulated, present a complete picture of the IRAS dust-band observations. 32 refs

  12. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Kanashima, T., E-mail: kanashima@ee.es.osaka-u.ac.jp; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K. [Graduate School of Engineering Science, Osaka University, Machkaneyama 1-3, Toyonaka, Osaka 560-8531 (Japan); Nohira, H. [Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557 (Japan)

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  13. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    International Nuclear Information System (INIS)

    Wang Yan-Rong; Yang Hong; Xu Hao; Wang Xiao-Lei; Luo Wei-Chun; Qi Lu-Wei; Zhang Shu-Xiang; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D and A) cycles, the D and A time, and the total annealing time. The results show that the increases of the number of D and A cycles (from 1 to 2) and D and A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D and A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D and A times and numbers of D and A cycles induce different breakdown mechanisms. (paper)

  14. The evolution of Neoproterozoic magmatism in Southernmost Brazil: shoshonitic, high-K tholeiitic and silica-saturated, sodic alkaline volcanism in post-collisional basins

    Directory of Open Access Journals (Sweden)

    Sommer Carlos A.

    2006-01-01

    Full Text Available The Neoproterozoic shoshonitic and mildly alkaline bimodal volcanism of Southernmost Brazil is represented by rock assemblages associated to sedimentary successions, deposited in strike-slip basins formed at the post-collisional stages of the Brasilian/Pan-African orogenic cycle. The best-preserved volcano sedimentary associations occur in the Camaquã and Campo Alegre Basins, respectively in the Sul-riograndense and Catarinense Shields and are outside the main shear belts or overlying the unaffected basement areas. These basins are characterized by alternation of volcanic cycles and siliciclastic sedimentation developed dominantly on a continental setting under subaerial conditions. This volcanism and the coeval plutonism evolved from high-K tholeiitic and calc-alkaline to shoshonitic and ended with a silica-saturated sodic alkaline magmatism, and its evolution were developed during at least 60 Ma. The compositional variation and evolution of post-collisional magmatism in southern Brazil are interpreted as the result mainly of melting of a heterogeneous mantle source, which includes garnet-phlogopite-bearing peridotites, veined-peridotites with abundant hydrated phases, such as amphibole, apatite and phlogopite, and eventually with the addition of an asthenospheric component. The subduction-related metasomatic character of post-collisional magmatism mantle sources in southern Brazil is put in evidence by Nb-negative anomalies and isotope features typical of EM1 sources.

  15. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

    Directory of Open Access Journals (Sweden)

    H. Hussin

    2014-01-01

    Full Text Available We present a simulation study on negative bias temperature instability (NBTI induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well as the resulting threshold voltage shift. By varying the physical thicknesses of the interface silicon dioxide (SiO2 and hafnium oxide (HfO2 layers, we investigate how the variation in thickness affects hole trapping/detrapping at different stress temperatures. The results suggest that the degradations are highly dependent on the physical gate stack parameters for a given stress voltage and temperature. The degradation is more pronounced by 5% when the thicknesses of HfO2 are increased but is reduced by 11% when the SiO2 interface layer thickness is increased during lower stress voltage. However, at higher stress voltage, greater degradation is observed for a thicker SiO2 interface layer. In addition, the existence of different stress temperatures at which the degradation behavior differs implies that the hole trapping/detrapping event is thermally activated.

  16. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  17. Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

    Science.gov (United States)

    Zhang, Shumao; Kuo, Yue

    2018-03-01

    Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

  18. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    Science.gov (United States)

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-08-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

  19. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  20. A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers

    International Nuclear Information System (INIS)

    Ingerle, D.; Meirer, F.; Zoeger, N.; Pepponi, G.; Giubertoni, D.; Steinhauser, G.; Wobrauschek, P.; Streli, C.

    2010-01-01

    Grazing Incidence X-ray Fluorescence Analysis (GIXRF) is a powerful technique for depth-profiling and characterization of thin layers in depths up to a few hundred nanometers. By measurement of fluorescence signals at various incidence angles Grazing Incidence X-ray Fluorescence Analysis provides information on depth distribution and total dose of the elements in the layers. The technique is very sensitive even in depths of a few nanometers. As Grazing Incidence X-ray Fluorescence Analysis does not provide unambigous depth profile information and needs a realistic input depth profile for fitting, in the context of the EC funded European Integrated Activity of Excellence and Networking for Nano and Micro-Electronics Analysis (ANNA) Grazing Incidence X-ray Fluorescence Analysis is used as a complementary technique to Secondary Ion Mass Spectrometry (SIMS) for the characterization of Ultra Shallow Junctions (USJ). A measuring chamber was designed, constructed and tested to meet the requirements of Grazing Incidence X-ray Fluorescence Analysis. A measurement protocol was developed and tested. Some results for As implants as well as Hf based high k layers on Silicon are shown. For the determination of the bulk As content of the wafers, Instrumental Neutron Activation Analysis has also been applied for comparison.

  1. Table of members of quasi-bands

    International Nuclear Information System (INIS)

    Sakai, Mitsuo.

    1984-04-01

    The probable members of the quasi-bands in even-even nuclei for Z between 6 and 100 are listed in this table. The terms quasi-bands have been introduced in the so-called spherical regions as the counter parts of the collective bands in the deformed regions. In the present compilation, the data for deformed nuclei are classified for convenience under the same titles, Quasi-Ground Band, Quasi-Beta Band and Quasi-Gamma Band, as are used for other nuclear regions. The present edition covers the literature through September, 1983. Fifteen newly discovered nuclides are included. The classification of energy level into quasi-bands is made on the basis of the systematic trend in the data over large groups of nuclei. (Kato, T.)

  2. A Novel Ku-Band/Ka-Band and Ka-Band/E-Band Multimode Waveguide Couplers for Power Measurement of Traveling-Wave Tube Amplifier Harmonic Frequencies

    Science.gov (United States)

    Wintucky, Edwin G.; Simons, Rainee N.

    2015-01-01

    This paper presents the design, fabrication and test results for a novel waveguide multimode directional coupler (MDC). The coupler, fabricated from two dissimilar frequency band waveguides, is capable of isolating power at the second harmonic frequency from the fundamental power at the output port of a traveling-wave tube (TWT) amplifier. Test results from proof-of-concept demonstrations are presented for a Ku-band/Ka-band MDC and a Ka-band/E-band MDC. In addition to power measurements at harmonic frequencies, a potential application of the MDC is in the design of a satellite borne beacon source for atmospheric propagation studies at millimeter-wave (mm-wave) frequencies (Ka-band and E-band).

  3. Dual-band frequency selective surface with large band separation and stable performance

    Science.gov (United States)

    Zhou, Hang; Qu, Shao-Bo; Peng, Wei-Dong; Lin, Bao-Qin; Wang, Jia-Fu; Ma, Hua; Zhang, Jie-Qiu; Bai, Peng; Wang, Xu-Hua; Xu, Zhuo

    2012-05-01

    A new technique of designing a dual-band frequency selective surface with large band separation is presented. This technique is based on a delicately designed topology of L- and Ku-band microwave filters. The two band-pass responses are generated by a capacitively-loaded square-loop frequency selective surface and an aperture-coupled frequency selective surface, respectively. A Faraday cage is located between the two frequency selective surface structures to eliminate undesired couplings. Based on this technique, a dual-band frequency selective surface with large band separation is designed, which possesses large band separation, high selectivity, and stable performance under various incident angles and different polarizations.

  4. Photonic band gap structure simulator

    Science.gov (United States)

    Chen, Chiping; Shapiro, Michael A.; Smirnova, Evgenya I.; Temkin, Richard J.; Sirigiri, Jagadishwar R.

    2006-10-03

    A system and method for designing photonic band gap structures. The system and method provide a user with the capability to produce a model of a two-dimensional array of conductors corresponding to a unit cell. The model involves a linear equation. Boundary conditions representative of conditions at the boundary of the unit cell are applied to a solution of the Helmholtz equation defined for the unit cell. The linear equation can be approximated by a Hermitian matrix. An eigenvalue of the Helmholtz equation is calculated. One computation approach involves calculating finite differences. The model can include a symmetry element, such as a center of inversion, a rotation axis, and a mirror plane. A graphical user interface is provided for the user's convenience. A display is provided to display to a user the calculated eigenvalue, corresponding to a photonic energy level in the Brilloin zone of the unit cell.

  5. Broad-band beam buncher

    International Nuclear Information System (INIS)

    Goldberg, D.A.; Flood, W.S.; Arthur, A.A.; Voelker, F.

    1986-01-01

    This patent describes a broad-band beam buncher. This beam buncher consists of: a housing adapted to be eacuated, an electron gun in the housing for producing a beam of electrons, buncher means in the housing forming a buncher cavity which has an entrance opening for receiving the electron beam and an exit opening through which the electron beam passes out of the buncher cavity, a drift tube electrode in the buncher cavity and disposed between the entrance opening and the exit opening with first and second gaps between the drift tube electrode and the entrance and exit openings, the drift tube electrode which has a first drift space through which the electron beam passes in traveling between the entrance and exit openings, modulating means for supplying an ultrahigh frequeny modulating signal to the drift tube electrode for producing velocity modulation of the electrons in the electron beam as the electrons pass through the buncher cavity and the drift tube electrode between the entrance opening and the exit opening, drift space means in the housing forming a second drift space for receiving the velocity modulated electron beam from the exit opening, the velocity modulated electron beam being bunched as it passes along the second drift space, the drift space means has a discharge opening through which the electron beam is discharged from the second drift space after being bunched therein, the modulating means containing a signal source for producing an ultrahigh frequency signal, a transmission line connected between the signal source and the drift tube electrode, and terminating means connected to the drift tube electrode for terminating the transmission line in approximately its characteristic impedance to afford a broad response band with minimum 6 variations therein

  6. Band 3 in aging and neurological disease.

    Science.gov (United States)

    Kay, M M

    1991-01-01

    Senescent cell antigen appears on old cells and marks them for death by initiating the binding of IgG autoantibody and subsequent removal by phagocytes in mammals and other vertebrates. We have created a synthetic aging antigen that blocks binding of IgG to senescent cells in vitro. Synthetic senescent cell antigen might be effective in preventing cellular destruction in vivo in certain diseases, and can be used to manipulate cellular life span in situ. Senescent cell antigen is generated by the modification of an important structural and transport membrane molecule, protein band 3. Band 3 is present in cellular, nuclear, Golgi, and mitochondrial membranes as well as in cell membranes. Band 3 proteins in nucleated cells participate in cell surface patching and capping. Band 3 maintains acid-base balance by mediating the exchange of anions (e.g., chloride, bicarbonate), and is the binding site for glycolytic enzymes. It is responsible for CO2 exchange in all tissues and organs. Thus, it is the most heavily used anion transport system in the body. Band 3 is a major transmembrane structural protein which attaches the plasma membrane to the internal cell cytoskeleton by binding to band 2.1 (ankyrin). Oxidation generates senescent cell antigen in situ. Band 3 is present in the central nervous system, and differences have been described in band 3 between young and aging brain tissue. One autosomal recessive neurological disease, choreoacanthocytosis, is associated with band 3 abnormalities. The 150 residues of the carboxyl terminus segment of band 3 appear to be altered. In brains from Alzheimer's disease patients, antibodies to aged band 3 label the amyloid core of classical plaques and the microglial cells located in the middle of the plaque in tissue sections, and an abnormal band 3 in immunoblots. Band 3 protein(s) in mammalian brain performs the same functions as that of erythroid band 3. These functions is anion transport, ankyrin binding, and generation of

  7. The dynamics of a shear band

    Science.gov (United States)

    Giarola, Diana; Capuani, Domenico; Bigoni, Davide

    2018-03-01

    A shear band of finite length, formed inside a ductile material at a certain stage of a continued homogeneous strain, provides a dynamic perturbation to an incident wave field, which strongly influences the dynamics of the material and affects its path to failure. The investigation of this perturbation is presented for a ductile metal, with reference to the incremental mechanics of a material obeying the J2-deformation theory of plasticity (a special form of prestressed, elastic, anisotropic, and incompressible solid). The treatment originates from the derivation of integral representations relating the incremental mechanical fields at every point of the medium to the incremental displacement jump across the shear band faces, generated by an impinging wave. The boundary integral equations (under the plane strain assumption) are numerically approached through a collocation technique, which keeps into account the singularity at the shear band tips and permits the analysis of an incident wave impinging a shear band. It is shown that the presence of the shear band induces a resonance, visible in the incremental displacement field and in the stress intensity factor at the shear band tips, which promotes shear band growth. Moreover, the waves scattered by the shear band are shown to generate a fine texture of vibrations, parallel to the shear band line and propagating at a long distance from it, but leaving a sort of conical shadow zone, which emanates from the tips of the shear band.

  8. Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

    Science.gov (United States)

    Na, Junhong; Joo, Min-Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae-Sung; Piao, Mingxing; Jin, Jun-Eon; Jang, Ho-Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae

    2014-01-07

    Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.

  9. Bulk rock and mineral chemistries and ascent rates of high-K calc-alkalic epidote-bearing magmas, Northeastern Brazil

    Science.gov (United States)

    Brasilino, R. G.; Sial, A. N.; Ferreira, V. P.; Pimentel, M. M.

    2011-12-01

    A manifestation of the Pan-African-Brasiliano orogeny (700-550 Ma) in northeastern Brazil was the emplacement of widespread Neoproterozoic granitoids in diverse tectonic terranes. Among these plutons are the magmatic epidote-bearing Conceição das Creoulas, Caldeirão Encantado, Murici, and Boqueirão plutons, located close to the boundary between the Alto Pajeú and Cachoeirinha-Salgueiro terranes. The plutons are high-K calc-alkalic granodiorites to monzogranites, with tabular K-feldspar megacrysts. Pistacite [atomic Fe+ 3/(Fe3++ Al)] in epidote in these granitoids ranges from 21 to 27%. High oxygen fugacity (log fO2 - 19 to - 13) and the preservation of epidote suggest that the magma was oxidized. Al-in-hornblende barometry indicates hornblende solidification between 6 and 8 kbar, at 620 to 780 °C according to the hornblende-plagioclase thermometer. Zircon saturation thermometry attests to a near-liquidus temperature range from 794 to 853 °C. Partial corrosion of magmatic epidote in these four plutons occurred during an interval of no more than 10-30 years, which corresponds to maximum magma ascent rates of 650-1000 m/year. Diking, associated with regional shearing, probably facilitated rapid transport of granitic magma through hot continental crust at peak metamorphism, and permitted survival of epidote that was out of equilibrium at the low pressure of final emplacement. Similarities between mineralogical composition, chemistry, and isotopic compositions (εNd(0.60Ga) between - 2 and - 5,TDM from 1.2 to 1.3 Ga, δ18O values > 10‰, V-SMOW) of these four plutons and Neoproterozoic magmatic epidote-bearing plutons elsewhere in northeastern Brazil, argue for similar metabasaltic/mafic sources that had previously experienced low-temperature alteration.

  10. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  11. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-13

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

  12. Intruder bands in Z = 51 nuclei

    International Nuclear Information System (INIS)

    LaFosse, D.R.

    1993-01-01

    Recent investigations of h 11/2 proton intruder bands in odd 51 Sb nuclei are reported. In addition to experiments performed at SUNY Stony Brook and Chalk River, data from Early Implementation of GAMMASPHERE (analysis in progress) are presented. In particular, the nuclei 109 Sb and 111 Sb are discussed. Rotational bands based on the πh 11/2 orbital coupled to a 2p2h deformed state of the 50 Sn core have been observed. These bands have been observed to high spin, and in the case of 109 Sb to a rotational frequency of 1.4 MeV, the highest frequency observed in a heavy nucleus. The dynamic moments of inertia in these bands decrease slowly with frequency, suggesting a gradual band termination. The systematics of such bands in 109-119 Sb will be discussed

  13. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  14. Amniotic band syndrome: A clinical brief

    Directory of Open Access Journals (Sweden)

    Dasaradha Ramireddy Malireddy

    2017-01-01

    Full Text Available Amniotic band syndrome (ABS results from bands of amnion entangling fetal parts. They may manifest as constriction rings or complex congenital anomalies resulting in stillbirth. Karyotyping is important for exclusion of inherited disorders and proper counseling. Two case reports one stillbirth and the other with constriction ring of fingers and mild hydronephrosis are presented. The aim of this paper is to make awareness and stress the need for doing thorough work-up in all cases of constriction bands.

  15. Fade Mitigation Techniques at Ka-Band

    Science.gov (United States)

    Dissanayake, Asoka (Editor)

    1996-01-01

    Rain fading is the dominant propagation impairment affecting Ka-band satellite links and rain fade mitigation is a key element in the design of Ka-band satellite networks. Some of the common fade mitigation techniques include: power control, diversity, adaptive coding, and resource sharing. The Advanced Communications Technology Satellite (ACTS) provides an excellent opportunity to develop and test Ka-band rain impairment amelioration techniques. Up-link power control and diversity are discussed in this paper.

  16. Computational Design of Flat-Band Material

    Science.gov (United States)

    Hase, I.; Yanagisawa, T.; Kawashima, K.

    2018-02-01

    Quantum mechanics states that hopping integral between local orbitals makes the energy band dispersive. However, in some special cases, there are bands with no dispersion due to quantum interference. These bands are called as flat band. Many models having flat band have been proposed, and many interesting physical properties are predicted. However, no real compound having flat band has been found yet despite the 25 years of vigorous researches. We have found that some pyrochlore oxides have quasi-flat band just below the Fermi level by first principles calculation. Moreover, their valence bands are well described by a tight-binding model of pyrochlore lattice with isotropic nearest neighbor hopping integral. This model belongs to a class of Mielke model, whose ground state is known to be ferromagnetic with appropriate carrier doping and on-site repulsive Coulomb interaction. We have also performed a spin-polarized band calculation for the hole-doped system from first principles and found that the ground state is ferromagnetic for some doping region. Interestingly, these compounds do not include magnetic element, such as transition metal and rare-earth elements.

  17. Reward banding to determine reporting rate of recovered mourning dove bands

    Science.gov (United States)

    Tomlinson, R.E.

    1968-01-01

    Reward bands placed on the other leg of certain regularly banded immature mourning doves (Zenaidura macroura) were used to develop information on reporting rates of recovered dove bands. Reports from 15 widely separated sections of the United States showed considerable variation in recovery rate of doves both with and without reward bands. The overall percentages of banded doves that were reported as recovered were 9.69% for those with reward bands and 3.83% for controls. The bandreporting rate for states influenced by publicity was 66%; that for states not influenced was 32%.

  18. Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

    Science.gov (United States)

    Ju, Byongsun

    2005-11-01

    As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3

  19. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-11-30

    Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

  20. Electronic structure of layered ferroelectric high-k titanate La{sub 2}Ti{sub 2}O{sub 7}

    Energy Technology Data Exchange (ETDEWEB)

    Atuchin, V V [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation); Gavrilova, T A [Laboratory of Electron Microscopy and Submicron Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation); Grivel, J-C [Materials Research Department, National Laboratory for Sustainable Energy, Technical University of Denmark, Frederiksborgvej 399, DK-4000, Roskilde (Denmark); Kesler, V G, E-mail: atuchin@thermo.isp.nsc.r [Laboratory of Physical Bases of Integrated Microelectronics, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation)

    2009-02-07

    The electronic structure of binary titanate La{sub 2}Ti{sub 2}O{sub 7} has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La{sub 2}Ti{sub 2}O{sub 7} are determined as alpha{sub Ti} = 872.4 and alpha{sub O} = 1042.3 eV. Chemical bonding effects have been discussed with binding energy (BE) differences DELTA{sub Ti} = (BE O 1s - BE Ti 2p{sub 3/2}) = 71.6 eV and DELTA{sub La} = (BE La 3d{sub 5/2} - BE O 1s) = 304.7 eV as key parameters in comparison with those in several titanium- and lanthanum-bearing oxides.

  1. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

    Science.gov (United States)

    Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

    2018-01-01

    The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

  2. Solid State KA-Band, Solid State W-Band and TWT Amplifiers, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Phase I of the proposal describes plans to develop a state of the art transmitter for the W-Band and KA -Band Cloud Radar system. Our focus will be concentrated in...

  3. Multiple band structure in 156Er

    International Nuclear Information System (INIS)

    Sunyar, A.W.; Der Mateosian, E.; Kistner, O.C.; Johnson, A.; Lumpkin, A.H.; Thieberger, P.

    1976-01-01

    The 142 Nd( 18 O,4n) 156 Er reaction at 90-95 MeV was used to study 156 Er high-spin states to spin 24. In addition to the background ground-state band, two well developed off-spin side bands, one of each parity, were observed. (Auth.)

  4. 47 CFR 90.1213 - Band plan.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Band plan. 90.1213 Section 90.1213 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND... § 90.1213 Band plan. The following channel center frequencies are permitted to be aggregated for...

  5. Signature effects in 2-qp rotational bands

    International Nuclear Information System (INIS)

    Jain, A.K.; Goel, A.

    1992-01-01

    The authors briefly review the progress in understanding the 2-qp rotational bands in odd-odd nuclei. Signature effects and the phenomenon of signature inversion are discussed. The Coriolis coupling appears to have all the ingredients to explain the inversion. Some recent work on signature dependence in 2-qp bands of even-even nuclei is also discussed; interesting features are pointed out

  6. Does the chromatic Mach bands effect exist?

    Science.gov (United States)

    Tsofe, Avital; Spitzer, Hedva; Einav, Shmuel

    2009-06-30

    The achromatic Mach bands effect is a well-known visual illusion, discovered over a hundred years ago. This effect has been investigated thoroughly, mainly for its brightness aspect. The existence of Chromatic Mach bands, however, has been disputed. In recent years it has been reported that Chromatic Mach bands are not perceived under controlled iso-luminance conditions. However, here we show that a variety of Chromatic Mach bands, consisting of chromatic and achromatic regions, separated by a saturation ramp, can be clearly perceived under iso-luminance and iso-brightness conditions. In this study, observers' eye movements were recorded under iso-brightness conditions. Several observers were tested for their ability to perceive the Chromatic Mach bands effect and its magnitude, across different cardinal and non-cardinal Chromatic Mach bands stimuli. A computational model of color adaptation, which predicted color induction and color constancy, successfully predicts this variation of Chromatic Mach bands. This has been tested by measuring the distance of the data points from the "achromatic point" and by calculating the shift of the data points from predicted complementary lines. The results suggest that the Chromatic Mach bands effect is a specific chromatic induction effect.

  7. Low band gap polymers for organic photovoltaics

    DEFF Research Database (Denmark)

    Bundgaard, Eva; Krebs, Frederik C

    2007-01-01

    Low band gap polymer materials and their application in organic photovoltaics (OPV) are reviewed. We detail the synthetic approaches to low band gap polymer materials starting from the early methodologies employing quinoid homopolymer structures to the current state of the art that relies...

  8. Band mixing in /sup 160/Dy

    Energy Technology Data Exchange (ETDEWEB)

    Hasiza, M L; Singh, K; Sahota, H S [Punjabi Univ., Patiala (India). Dept. of Physics

    1982-11-01

    The intensities of the gamma transitions in /sup 160/Dy have been measured precisely by a 45 cc Ge(Li) detector. Unequal quadrupole moments for the ground and gamma vibrational bands have been proposed in order to remove the inconsistencies in the values of band mixing parameter Z sub(gamma) for this doubly even deformed nucleus of /sup 160/Dy.

  9. Convex Banding of the Covariance Matrix.

    Science.gov (United States)

    Bien, Jacob; Bunea, Florentina; Xiao, Luo

    2016-01-01

    We introduce a new sparse estimator of the covariance matrix for high-dimensional models in which the variables have a known ordering. Our estimator, which is the solution to a convex optimization problem, is equivalently expressed as an estimator which tapers the sample covariance matrix by a Toeplitz, sparsely-banded, data-adaptive matrix. As a result of this adaptivity, the convex banding estimator enjoys theoretical optimality properties not attained by previous banding or tapered estimators. In particular, our convex banding estimator is minimax rate adaptive in Frobenius and operator norms, up to log factors, over commonly-studied classes of covariance matrices, and over more general classes. Furthermore, it correctly recovers the bandwidth when the true covariance is exactly banded. Our convex formulation admits a simple and efficient algorithm. Empirical studies demonstrate its practical effectiveness and illustrate that our exactly-banded estimator works well even when the true covariance matrix is only close to a banded matrix, confirming our theoretical results. Our method compares favorably with all existing methods, in terms of accuracy and speed. We illustrate the practical merits of the convex banding estimator by showing that it can be used to improve the performance of discriminant analysis for classifying sound recordings.

  10. Atomic-Monolayer MoS2 Band-to-Band Tunneling Field-Effect Transistor

    KAUST Repository

    Lan, Yann Wen

    2016-09-05

    The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2 as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.

  11. Energy correlations for mixed rotational bands

    International Nuclear Information System (INIS)

    Doessing, T.

    1985-01-01

    A schematic model for the mixing of rotational bands above the yrast line in well deformed nuclei is considered. Many-particle configurations of a rotating mean field form basis bands, and these are subsequently mixed due to a two body residual interaction. The energy interval over which a basis band is spread out increases with increasing excitation energy above the yrast line. Conversely, the B(E2) matrix element for rotational decay out of one of the mixed band states is spread over an interval which is predicted to become more narrow with increasing excitation energy. Finally, the implication of band mixing for γ-ray energy correlations is briefly discussed. (orig.)

  12. Fluctuation diamagnetism in two-band superconductors

    Science.gov (United States)

    Adachi, Kyosuke; Ikeda, Ryusuke

    2016-04-01

    Anomalously large fluctuation diamagnetism around the superconducting critical temperature has been recently observed in iron selenide (FeSe) [Kasahara et al. (unpublished)]. This indicates that superconducting fluctuations (SCFs) play a more significant role in FeSe, which supposedly has a two-band structure, than in the familiar single-band superconductors. Motivated by the data on FeSe, SCF-induced diamagnetism is examined in a two-band system, on the basis of a phenomenological approach with a Ginzburg-Landau functional. The obtained results indicate that the SCF-induced diamagnetism may be more enhanced than that in a single-band system due to the existence of two distinct fluctuation modes. Such enhancement of diamagnetism unique to a two-band system seems consistent with the large diamagnetism observed in FeSe, though still far from a quantitative agreement.

  13. Design of a side-band-separating heterodyne mixer for band 9 of ALMA

    NARCIS (Netherlands)

    Baryshev, AM; Kooi, J; Mena, FR; Lodewijk, CRJ; Wild, W

    2005-01-01

    A side-band-separating (SBS) heterodyne mixer has been designed for the Atacama Large Millimeter Array (ALMA) 602-720 GHz band, as it will present a great improvement over the current double-side-band configuration under development at the moment. Here we present design details and the results of

  14. Absorption band Q model for the earth

    International Nuclear Information System (INIS)

    Anderson, D.L.; Given, J.W.

    1982-01-01

    Body wave, surface wave, and normal mode data are used to place constraints on the frequency dependence of Q in the mantle. With a simple absorption band model it is possible to satisfy the shear sensitive data over a broad frequency range. The quality factor Q/sub s/(ω) is proportional to ω/sup α/ in the band and to ω and ω -1 at higher and lower frequencies, respectively, as appropriate for a relaxation mechanism with a spectrum of relaxation time. The parameters of the band are Q(min) = 80, α = 0.15, and width, 5 decades. The center of the band varies from 10 1 seconds in the upper mantle, to 1.6 x 10 3 seconds in the lower mantle. The shift of the band with depth is consistent with the expected effects of temperature, pressure and stress. High Q, regions of the mantle are attributed to a shift of the absorption band to longer periods. To satisfy the gravest fundamental spheroidal modes and the ScS data, the absorption band must shift back into the short-period seismic band at the base of the mantle. This may be due to a high temperature gradient or high shear stresses. A preliminary attempt is also made to specify bulk dissipation in the mantle and core. Specific features of the absorption band model are low Q in the body wave band at both the top and the base of the mantle, low Q for long-period body waves in the outer core, an inner core Q 2 that increases with period, and low Q/sub p//Q/sub s/ at short periods in the middle mantel. The short-period Q/sub s/ increases rapidly at 400 km and is relatively constant from this depth to 2400 km. The deformational Q of the earth at a period of 14 months is predicted to be 463

  15. Band-type microelectrodes for amperometric immunoassays

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Ga-Yeon; Chang, Young Wook; Ko, Hyuk [Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul, 120-749 (Korea, Republic of); Kang, Min-Jung [Korea Institute of Science and Technology (KIST), Seoul (Korea, Republic of); Pyun, Jae-Chul, E-mail: jcpyun@yonsei.ac.kr [Department of Materials Science and Engineering, Yonsei University, 134 Shinchon-dong, Seodaemun-gu, Seoul, 120-749 (Korea, Republic of)

    2016-07-20

    A band-type microelectrode was made using a parylene-N film as a passivation layer. A circular-type, mm-scale electrode with the same diameter as the band-type microelectrode was also made with an electrode area that was 5000 times larger than the band-type microelectrode. By comparing the amperometric signals of 3,5,3′,5′-tetramethylbenzidine (TMB) samples at different optical density (OD) values, the band-type microelectrode was determined to be 9 times more sensitive than the circular-type electrode. The properties of the circular-type and the band-type electrodes (e.g., the shape of their cyclic voltammograms, the type of diffusion layer used, and the diffusion layer thickness per unit electrode area) were characterized according to their electrode area using the COMSOL Multiphysics software. From these simulations, the band-type electrode was estimated to have the conventional microelectrode properties, even when the electrode area was 100 times larger than a conventional circular-type electrode. These results show that both the geometry and the area of an electrode can influence the properties of the electrode. Finally, amperometric analysis based on a band-type electrode was applied to commercial ELISA kits to analyze human hepatitis B surface antigen (hHBsAg) and human immunodeficiency virus (HIV) antibodies. - Highlights: • A band-type microelectrode was made using a parylene-N film as a passivation layer. • The band-type microelectrode was 14-times more sensitive than circular-type electrode. • The influence of geometry on microelectrode properties was simulated using COMSOL. • The band-type electrode was applied to ELISA kits for hHBsAg and hHIV-antibodies.

  16. Electronic structure of layered ferroelectric high-k titanate Pr{sub 2}Ti{sub 2}O{sub 7}

    Energy Technology Data Exchange (ETDEWEB)

    Atuchin, V.V., E-mail: atuchin@thermo.isp.nsc.ru [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation); Gavrilova, T.A. [Laboratory of Nanodiagnostics and Nanolithography, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation); Grivel, J.-C. [Materials Research Division, National Laboratory for Sustainable Energy, Technical University of Denmark, Frederiksborgvej 399, DK-4000, Roskilde (Denmark); Kesler, V.G. [Laboratory of Physical Bases of Integrated Microelectronics, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation); Troitskaia, I.B. [Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation)

    2012-11-15

    The spectroscopic parameters and electronic structure of binary titanate Pr{sub 2}Ti{sub 2}O{sub 7} have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Pr{sub 2}Ti{sub 2}O{sub 7} have been determined as {alpha}{sub Ti}=872.8 and {alpha}{sub O}=1042.3 eV. Variations of cation-anion bond ionicity have been discussed using binding energy differences {Delta}{sub Ti}=(BE O 1s-BE Ti 2p{sub 3/2})=71.6 eV and {Delta}{sub Pr}=BE(Pr 3d{sub 5/2})-BE(O 1s)=403.8 eV as key parameters in comparison with those of other titanium- and praseodymium-bearing oxides. Highlights: Black-Right-Pointing-Pointer Solid state synthesis of polar titanate Pr{sub 2}Ti{sub 2}O{sub 7}. Black-Right-Pointing-Pointer Structural and spectroscopic properties and electronic structure determination. Black-Right-Pointing-Pointer Ti-O and Pr-O bonding analysis using Ti 2p{sub 3/2}, Pr 3d{sub 5/2} and O 1s core levels.

  17. Two-band superconductor magnesium diboride

    International Nuclear Information System (INIS)

    Xi, X X

    2008-01-01

    This review focuses on the most important features of the 40 K superconductor MgB 2 -the weakly interacting multiple bands (the σ and π bands) and the distinct multiple superconducting energy gaps (the σ and π gaps). Even though the pairing mechanism of superconductor MgB 2 is the conventional electron-phonon coupling, the prominent influence of the two bands and two gaps on its properties sets it apart from other superconductors. It leads to markedly different behaviors in upper critical field, vortex structure, magnetoresistance and many other superconducting and normal-state properties in MgB 2 from single-band superconductors. Further, it gives rise to new physics that does not exist in single-band superconductors, such as the internal Josephson effects between the two order parameters. These unique phenomena depend sensitively on scattering inside and between the two bands, and the intraband and interband scattering can be modified by chemical substitution and irradiation. MgB 2 has brought unprecedented attention to two-band superconductivity, which has been found to exist in other old and new superconductors. The legacy of MgB 2 will be long lasting because of this, as well as the lessons it teaches in terms of the search for new phonon-mediated higher T c superconductors

  18. Dual-band frequency selective surface with large band separation and stable performance

    International Nuclear Information System (INIS)

    Zhou Hang; Qu Shao-Bo; Lin Bao-Qin; Wang Jia-Fu; Ma Hua; Zhang Jie-Qiu; Peng Wei-Dong; Bai Peng; Wang Xu-Hua; Xu Zhuo

    2012-01-01

    A new technique of designing a dual-band frequency selective surface with large band separation is presented. This technique is based on a delicately designed topology of L- and Ku-band microwave filters. The two band-pass responses are generated by a capacitively-loaded square-loop frequency selective surface and an aperture-coupled frequency selective surface, respectively. A Faraday cage is located between the two frequency selective surface structures to eliminate undesired couplings. Based on this technique, a dual-band frequency selective surface with large band separation is designed, which possesses large band separation, high selectivity, and stable performance under various incident angles and different polarizations. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  19. Asymmetric acoustic transmission in multiple frequency bands

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Hong-xiang, E-mail: jsdxshx@ujs.edu.cn [Research Center of Fluid Machinery Engineering and Technology, Jiangsu University, Zhenjiang 212013 (China); Laboratory of Modern Acoustics, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China); State Key Laboratory of Acoustics, Institute of Acoustics, Chinese Academy of Sciences, Beijing 100190 (China); Yuan, Shou-qi, E-mail: Shouqiy@ujs.edu.cn [Research Center of Fluid Machinery Engineering and Technology, Jiangsu University, Zhenjiang 212013 (China); Zhang, Shu-yi [Laboratory of Modern Acoustics, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093 (China)

    2015-11-23

    We report both experimentally and numerically that the multi-band device of the asymmetric acoustic transmission is realized by placing two periodic gratings with different periods on both sides of two brass plates immersed in water. The asymmetric acoustic transmission can exist in four frequency bands below 1500 kHz, which arises from the interaction between various diffractions from the two gratings and Lamb modes in the brass plates immersed in water. The results indicate that the device has the advantages of multiple band, broader bandwidth, and simpler structure. Our finding should have great potential applications in ultrasonic devices.

  20. Asymmetric acoustic transmission in multiple frequency bands

    International Nuclear Information System (INIS)

    Sun, Hong-xiang; Yuan, Shou-qi; Zhang, Shu-yi

    2015-01-01

    We report both experimentally and numerically that the multi-band device of the asymmetric acoustic transmission is realized by placing two periodic gratings with different periods on both sides of two brass plates immersed in water. The asymmetric acoustic transmission can exist in four frequency bands below 1500 kHz, which arises from the interaction between various diffractions from the two gratings and Lamb modes in the brass plates immersed in water. The results indicate that the device has the advantages of multiple band, broader bandwidth, and simpler structure. Our finding should have great potential applications in ultrasonic devices

  1. Observation of dipole bands in 144Sm

    International Nuclear Information System (INIS)

    Raut, R.; Ganguly, S.; Kshetri, R.; Banerjee, P.; Bhattacharya, S.; Dasmahapatra, B.; Mukherjee, A.; Sahasarkar, M.; Goswami, A.; Basu, S.K.; Bhattacharjee, T.; Mukherjee, G.; Chakraborty, A.; Ghughre, S.S.; Krishichayan; Mukhopadhyay, S.; Gangopadhyay, G.; Singh, A.K.

    2007-01-01

    The nucleus 144 Sm (Z=62, N=82), with its proximity to the shell closure and possibilities of particles and holes occupying high j orbitals, following appropriate excitations, is a suitable system for observation of dipole (MR) bands

  2. Silicone rubber band for laparoscopic tubal sterilization.

    Science.gov (United States)

    Ansari, A H; Sealey, R M; Gay, J W; Kang, I

    1977-12-01

    In 1974, Yoon and associates (Am J Obstet Gynecol 120:132, 1974) described a new approach in which laparoscopic tubal occlusion was accomplished by utilizing the silicone rubber band technique. Recognizing the great advantages of the new technique in eliminating potential thermal injury associated with electrocoagulation, the authors have utilized the Yoon silicone rubber band technique in these institutions over the past 20 months. Thus far the procedure has been performed in 304 patients without any major complications. In the hope of eliminating and/or reducing possible pregnancy-failure rates, in 110 cases. In addition to application of the silicone band, the tube within the band was transected with non-electrical Seigler biopsy forceps. This, we believe, should provide an interesting long-term comparative study.

  3. Microbial processes in banded iron formation deposition

    DEFF Research Database (Denmark)

    Posth, Nicole; Konhauser, Kurt; Kappler, Andreas

    2013-01-01

    , remains unresolved. Evidence of an anoxic Earth with only localized oxic areas until the Great Oxidation Event ca 2·45 to 2·32 Ga makes the investigation of O2-independent mechanisms for banded iron formation deposition relevant. Recent studies have explored the long-standing proposition that Archean......Banded iron formations have been studied for decades, particularly regarding their potential as archives of the Precambrian environment. In spite of this effort, the mechanism of their deposition and, specifically, the role that microbes played in the precipitation of banded iron formation minerals...... banded iron formations may have been formed, and diagenetically modified, by anaerobic microbial metabolisms. These efforts encompass a wide array of approaches including isotope, ecophysiological and phylogeny studies, molecular and mineral marker analysis, and sedimentological reconstructions. Herein...

  4. Simulating Precambrian banded iron formation diagenesis

    DEFF Research Database (Denmark)

    Posth, Nicole R.; K??hler, Inga; D. Swanner, Elizabeth

    2013-01-01

    Post-depositional diagenetic alteration makes the accurate interpretation of key precipitation processes in ancient sediments, such as Precambrian banded iron formations (BIFs), difficult. While microorganisms are proposed as key contributors to BIF deposition, the diagenetic transformation...

  5. The Novel Microwave Stop-Band Filter

    Directory of Open Access Journals (Sweden)

    R. E. Chernobrovkin

    2008-01-01

    Full Text Available The stop-band filter with the new band-rejection element is proposed. The element is a coaxial waveguide with the slot in the centre conductor. In the frame of this research, the numerical and experimental investigations of the amplitude-frequency characteristics of the filter are carried out. It is noted that according to the slot parameters the two typical resonances (half-wave and quarter-wave can be excited. The rejection band of the single element is defined by the width, depth, and dielectric filling of the slot. Fifth-order Chebyshev filter utilizing the aforementioned element is also synthesized, manufactured, and tested. The measured and simulated results are in good agreement. The experimental filter prototype exhibits the rejection band 0.86 GHz at the level −40 dB.

  6. Experimental study on the adiabatic shear bands

    International Nuclear Information System (INIS)

    Affouard, J.

    1984-07-01

    Four martensitic steels (Z50CDV5 steel, 28CND8 steel, 35NCDV16 steel and 4340 steel) with different hardness between 190 and 600 Hsub(B) (Brinell hardness), have been studied by means of dynamic compressive tests on split Hopkinson pressure bar. Microscopic observations show that the fracture are associated to the development of adiabatic shear bands (except 4340 steel with 190 Hsub(B) hardness). By means of tests for which the deformation is stopped at predetermined levels, the measurement of shear and hardness inside the band and the matrix indicates the chronology of this phenomenon: first the localization of shear, followed by the formation of adiabatic shear band and ultimatly crack initiation and propagation. These results correlated with few simulations by finite elements have permitted to suggest two mecanisms of deformation leading to the formation of adiabatic shear bands in this specific test [fr

  7. The cellular approach to band structure calculations

    International Nuclear Information System (INIS)

    Verwoerd, W.S.

    1982-01-01

    A short introduction to the cellular approach in band structure calculations is given. The linear cellular approach and its potantial applicability in surface structure calculations is given some consideration in particular

  8. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2001-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  9. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2003-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  10. Full L-S Band Telemetry System

    National Research Council Canada - National Science Library

    Jensen, Michael

    2002-01-01

    Recent changes in spectrum availability as well as higher demands for spectrum have motivated the development of telemetry transmit systems capable of fully operating over both L and S telemetry bands...

  11. Deployable Ka-Band Reflectarray, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Tyvak, in collaboration with UCLA, proposes a novel approach to the challenge of creating a large reflector for Ka-band high data rate links. We propose to attach...

  12. Confidence bands for inverse regression models

    International Nuclear Information System (INIS)

    Birke, Melanie; Bissantz, Nicolai; Holzmann, Hajo

    2010-01-01

    We construct uniform confidence bands for the regression function in inverse, homoscedastic regression models with convolution-type operators. Here, the convolution is between two non-periodic functions on the whole real line rather than between two periodic functions on a compact interval, since the former situation arguably arises more often in applications. First, following Bickel and Rosenblatt (1973 Ann. Stat. 1 1071–95) we construct asymptotic confidence bands which are based on strong approximations and on a limit theorem for the supremum of a stationary Gaussian process. Further, we propose bootstrap confidence bands based on the residual bootstrap and prove consistency of the bootstrap procedure. A simulation study shows that the bootstrap confidence bands perform reasonably well for moderate sample sizes. Finally, we apply our method to data from a gel electrophoresis experiment with genetically engineered neuronal receptor subunits incubated with rat brain extract

  13. Control Banding and Nanotechnology Synergist

    Energy Technology Data Exchange (ETDEWEB)

    Zalk, D; Paik, S

    2009-12-15

    The average Industrial Hygienist (IH) loves a challenge, right? Okay, well here is one with more than a few twists. We start by going through the basics of a risk assessment. You have some chemical agents, a few workers, and the makings of your basic exposure characterization. However, you have no occupational exposure limit (OEL), essentially no toxicological basis, and no epidemiology. Now the real handicap is that you cannot use sampling pumps, cassettes, tubes, or any of the media in your toolbox, and the whole concept of mass-to-dose is out the window, even at high exposure levels. Of course, by the title, you knew we were talking about nanomaterials (NM). However, we wonder how many IHs know that this topic takes everything you know about your profession and turns it upside down. It takes the very foundations that you worked so hard in college and in the field to master and pulls it out from underneath you. It even takes the gold standard of our profession, the quantitative science of exposure assessment, and makes it look pretty darn rusty. Now with NM there is the potential to get some aspect of quantitative measurements, but the instruments are generally very expensive and getting an appropriate workplace personal exposure measurement can be very difficult if not impossible. The potential for workers getting exposures, however, is very real, as evidenced by a recent publication reporting worker exposures to polyacrylate nanoparticles in a Chinese factory (Song et al. 2009). With something this complex and challenging, how does a concept as simple as Control Banding (CB) save the day? Although many IHs have heard of CB, most of their knowledge comes from its application in the COSHH Essentials toolkit. While there is conflicting published research on COSHH Essentials and its value for risk assessments, almost all of the experts agree that it can be useful when no OELs are available (Zalk and Nelson 2008). It is this aspect of CB, its utility with

  14. Modification in band gap of zirconium complexes

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, Mayank, E-mail: mayank30134@gmail.com; Singh, J.; Chouhan, S. [Department of Physics, ISLE, IPS Academy, Indore (M.P.) (India); Mishra, A. [School of Physics, Devi Ahilya Vishwavidyalaya, Indore (M.P.) (India); Shrivastava, B. D. [Govt. P. G. College, Biora (M.P.) (India)

    2016-05-06

    The optical properties of zirconium complexes with amino acid based Schiff bases are reported here. The zirconium complexes show interesting stereo chemical features, which are applicable in organometallic and organic synthesis as well as in catalysis. The band gaps of both Schiff bases and zirconium complexes were obtained by UV-Visible spectroscopy. It was found that the band gap of zirconium complexes has been modified after adding zirconium compound to the Schiff bases.

  15. Theoretical Prediction of the Forming Limit Band

    International Nuclear Information System (INIS)

    Banabic, D.; Paraianu, L.; Vos, M.; Jurco, P.

    2007-01-01

    Forming Limit Band (FLB) is a very useful tool to improve the sheet metal forming simulation robustness. Until now, the study of the FLB was only experimental. This paper presents the first attempt to model the FLB. The authors have established an original method for predicting the two margins of the limit band. The method was illustrated on the AA6111-T43 aluminum alloy. A good agreement with the experiments has been obtained

  16. Theoretical Prediction of the Forming Limit Band

    Science.gov (United States)

    Banabic, D.; Vos, M.; Paraianu, L.; Jurco, P.

    2007-04-01

    Forming Limit Band (FLB) is a very useful tool to improve the sheet metal forming simulation robustness. Until now, the study of the FLB was only experimental. This paper presents the first attempt to model the FLB. The authors have established an original method for predicting the two margins of the limit band. The method was illustrated on the AA6111-T43 aluminum alloy. A good agreement with the experiments has been obtained.

  17. Home-use cancer detecting band aid

    Science.gov (United States)

    Zalevsky, Zeev; Rudnitsky, Arkady; Sheinman, Victor; Tzoy, Andrey; Toktosunov, Aitmamat; Adashov, Arkady

    2016-03-01

    In this paper we present a novel concept in which special band aid is developed for early detection of cancer. The band aid contains an array of micro needles with small detection array connected to each needle which inspects the color of the surface of the skin versus time after being pinched with the needles. We were able to show in pre-clinical trials that the color varies differently if the skin is close to tumor tissue.

  18. A superdeformed band in {sup 142}Sm

    Energy Technology Data Exchange (ETDEWEB)

    Hackman, G; Mullins, J M; Kuehner, J A; Prevost, D; Waddington, J C [McMaster Univ., Hamilton, ON (Canada). Dept. of Physics; Galindo-Uribarri, A; Janzen, V P; Radford, D C; Schmeing, N; Ward, D [Atomic Energy of Canada Ltd., Chalk River, ON (Canada). Chalk River Nuclear Labs.

    1992-08-01

    Observation of {gamma}-{gamma} coincidences from the reaction {sup 124}Sn({sup 24}Mg,6n){sup 142}Sm at 145 MeV indicates the existence of a rotational band with dynamic moment of inertia J{sup (2)} similar to that of the superdeformed band in the isotone {sup 143}Eu. This result is consistent with calculations predicting superdeformed structures in N = 80, Z {approx} 64 nuclei. (author). 8 refs., 4 figs.

  19. Band structures in near spherical 138Ce

    Science.gov (United States)

    Bhattacharjee, T.; Chanda, S.; Bhattacharyya, S.; Basu, S. K.; Bhowmik, R. K.; Das, J. J.; Pramanik, U. Datta; Ghugre, S. S.; Madhavan, N.; Mukherjee, A.; Mukherjee, G.; Muralithar, S.; Singh, R. P.

    2009-06-01

    The high spin states of N=80138Ce have been populated in the fusion evaporation reaction 130Te( 12C, 4n) 138Ce at E=65 MeV. The γ transitions belonging to various band structures were detected and characterized using an array of five Clover Germanium detectors. The level scheme has been established up to a maximum spin and excitation energy of 23 ℏ and 9511.3 keV, respectively, by including 53 new transitions. The negative parity ΔI=1 band, developed on the 6536.3 keV 15 level, has been conjectured to be a magnetic rotation band following a semiclassical analysis and comparing the systematics of similar bands in the neighboring nuclei. The said band is proposed to have a four quasiparticle configuration of [πgh]⊗[. Other band structures are interpreted in terms of multi-quasiparticle configurations, based on Total Routhian Surface (TRS) calculations. For the low and medium spin states, a shell model calculation using a realistic two body interaction has been performed using the code OXBASH.

  20. Electron correlations in narrow band systems

    International Nuclear Information System (INIS)

    Kishore, R.

    1983-01-01

    The effect of the electron correlations in narrow bands, such as d(f) bands in the transition (rare earth) metals and their compounds and the impurity bands in doped semiconductors is studied. The narrow band systems is described, by the Hubbard Hamiltonian. By proposing a local self-energy for the interacting electron, it is found that the results are exact in both atomic and band limits and reduce to the Hartree Fock results for U/Δ → 0, where U is the intra-atomic Coulomb interaction and Δ is the bandwidth of the noninteracting electrons. For the Lorentzian form of the density of states of the noninteracting electrons, this approximation turns out to be equivalent to the third Hubbard approximation. A simple argument, based on the mean free path obtained from the imaginary part of the self energy, shows how the electron correlations can give rise to a discontinous metal-nonmetal transition as proposed by Mott. The band narrowing and the existence of the satellite below the Fermi energy in Ni, found in photoemission experiments, can also be understood. (Author) [pt

  1. Band gap and mobility of epitaxial perovskite BaSn1 -xHfxO3 thin films

    Science.gov (United States)

    Shin, Juyeon; Lim, Jinyoung; Ha, Taewoo; Kim, Young Mo; Park, Chulkwon; Yu, Jaejun; Kim, Jae Hoon; Char, Kookrin

    2018-02-01

    A wide band-gap perovskite oxide BaSn O3 is attracting much attention due to its high electron mobility and oxygen stability. On the other hand, BaHf O3 was recently reported to be an effective high-k gate oxide. Here, we investigate the band gap and mobility of solid solutions of BaS n1 -xH fxO3 (x =0 -1 ) (BSHO) as a basis to build advanced perovskite oxide heterostructures. All the films were epitaxially grown on MgO substrates using pulsed laser deposition. Density functional theory calculations confirmed that Hf substitution does not create midgap states while increasing the band gap. From x-ray diffraction and optical transmittance measurements, the lattice constants and the band-gap values are significantly modified by Hf substitution. We also measured the transport properties of n -type La-doped BSHO films [(Ba ,La ) (Sn ,Hf ) O3 ] , investigating the feasibility of modulation doping in the BaSn O3/BSHO heterostructures. The Hall measurement data revealed that, as the Hf content increases, the activation rate of the La dopant decreases and the scattering rate of the electrons sharply increases. These properties of BSHO films may be useful for applications in various heterostructures based on the BaSn O3 system.

  2. B(M1) values in the band-crossing of shears bands in 197Pb

    Science.gov (United States)

    Krücken, R.; Cooper, J. R.; Beausang, C. W.; Novak, J. R.; Dewald, A.; Klug, T.; Kemper, G.; von Brentano, P.; Carpenter, M.; Wiedenhöver, I.

    We present details of the band crossing mechanism of shears bands using the example of 197Pb. Absolute reduced matrix elements B(M1) were determined by means of a RDM lifetime measurement in one of the shears bands in 197Pb. The experiment was performed using the New Yale Plunger Device (NYPD) in conjunction with the Gammasphere array. Band mixing calculations on the basis of the semi-classical model of the shears mechanism are used to describe the transition matrix elements B(M1) and energies throughout the band-crossing regions. Good agreement with the data was obtained and the detailed composition of the states in the shears band are discussed.

  3. ISM band to U-NII band frequency transverter and method of frequency transversion

    Science.gov (United States)

    Stepp, Jeffrey David [Grandview, MO; Hensley, Dale [Grandview, MO

    2006-09-12

    A frequency transverter (10) and method for enabling bi-frequency dual-directional transfer of digitally encoded data on an RF carrier by translating between a crowded or otherwise undesirable first frequency band, such as the 2.4 GHz ISM band, and a less-crowded or otherwise desirable second frequency band, such as the 5.0 GHz 6.0 GHz U-NII band. In a preferred embodiment, the transverter (10) connects between an existing data radio (11) and its existing antenna (30), and comprises a bandswitch (12); an input RF isolating device (14); a transmuter (16); a converter (18); a dual output local oscillator (20); an output RF isolating device (22); and an antenna (24) tuned to the second frequency band. The bandswitch (12) allows for bypassing the transverter (10), thereby facilitating its use with legacy systems. The transmuter (14) and converter (16) are adapted to convert to and from, respectively, the second frequency band.

  4. Decorating TiO2 Nanowires with BaTiO3 Nanoparticles: A New Approach Leading to Substantially Enhanced Energy Storage Capability of High-k Polymer Nanocomposites.

    Science.gov (United States)

    Kang, Da; Wang, Guanyao; Huang, Yanhui; Jiang, Pingkai; Huang, Xingyi

    2018-01-31

    The urgent demand of high energy density and high power density devices has triggered significant interest in high dielectric constant (high-k) flexible nanocomposites comprising dielectric polymer and high-k inorganic nanofiller. However, the large electrical mismatch between polymer and nanofiller usually leads to earlier electric failure of the nanocomposites, resulting in an undesirable decrease of electrical energy storage capability. A few studies show that the introduction of moderate-k shell onto a high-k nanofiller surface can decrease the dielectric constant mismatch, and thus, the corresponding nanocomposites can withstand high electric field. Unfortunately, the low apparent dielectric enhancement of the nanocomposites and high electrical conductivity mismatch between matrix and nanofiller still result in low energy density and low efficiency. In this study, it is demonstrated that encapsulating moderate-k nanofiller with high-k but low electrical conductivity shell is effective to significantly enhance the energy storage capability of dielectric polymer nanocomposites. Specifically, using BaTiO 3 nanoparticles encapsulated TiO 2 (BaTiO 3 @TiO 2 ) core-shell nanowires as filler, the corresponding poly(vinylidene fluoride-co-hexafluoropylene) nanocomposites exhibit superior energy storage capability in comparison with the nanocomposites filled by either BaTiO 3 or TiO 2 nanowires. The nanocomposite film with 5 wt % BaTiO 3 @TiO 2 nanowires possesses an ultrahigh discharged energy density of 9.95 J cm -3 at 500 MV m -1 , much higher than that of commercial biaxial-oriented polypropylene (BOPP) (3.56 J cm -3 at 600 MV m -1 ). This new strategy and corresponding results presented here provide new insights into the design of dielectric polymer nanocomposites with high electrical energy storage capability.

  5. Intégration de matériaux à forte permittivité électrique (High-k) dans les mémoires non-volatiles pour les générations sub-45nm

    OpenAIRE

    Bocquet , Marc

    2009-01-01

    Flash memory is today a major element for the development of the portable electronics which require more and more memory capability at low cost (netbook, cell phones, PDA, USB sticks...). In order to maintain it for the years to come, it is necessary to continue improving this technology. Also, the integration of High-k materials and the use of trap charge memories are strongly envisaged. This PhD focuses on the integration and the electrical study (fixed charge, trapping, leakage currents......

  6. Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process

    International Nuclear Information System (INIS)

    Qi Lu-Wei; Yang Hong; Ren Shang-Qing; Xu Ye-Feng; Luo Wei-Chun; Xu Hao; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI (90 °C, 125 °C, 160 °C) are studied and activation energy (E a ) values (0.13 eV and 0.15 eV) are extracted. Although the equivalent oxide thickness (EOT) values of two TiN thickness values are almost similar (0.85 nm and 0.87 nm), the 2.4-nm TiN one (thicker TiN capping layer) shows better PBTI reliability (13.41% at 0.9 V, 90 °C, 1000 s). This is due to the better interfacial layer/high-k (IL/HK) interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer. (paper)

  7. Rotational bands on few-particle excitations of very high spin

    International Nuclear Information System (INIS)

    Andersson, C.G.; Krumlinde, J.; Leander, G.; Szymanski, Z.

    1980-01-01

    An RPA formalism is developed to investigate the existence and properties of slow collective rotation around a non-symmetry axis, when there already exists a large angular momentum K along the symmetry axis built up by aligned single-particle spins. It is found necessary to distinguish between the collectivity and the repeatability of the rotational excitations. First the formalism is applied to bands on hihg-K isomers in the well-deformed nucleus 176 Hf, where the rotational-model picture is reproduced for intermediate K-values in agreement with experiment. At high K there is a suppression of the collectivity corresponding to the diminishing vector-coupling coefficient of the rotational model, but the repeatability actually improves. The moment of inertia is predicted to remain substantially smaller than the rigid-body value so the bands slope up steeply from the yrast line at spins where pairing effects are gone. A second application is to the initially spherical nucleus 212 Rn, which is believed to acquire an oblate deformation that increases steadily with K due to the oblate shape of the aligned orbitals. In this case the repeatable excitations come higher above the yrast line than in 176 Hf, even at comparable deformations. Some collective states may occur very close to yrast, but these are more like dressed singleparticle excitations. The main differences between the two nuclei studied is interpreted as a general consequence of their different shell structure. (author)

  8. Band gap determination of thin praseodymium oxide layers on aluminium oxynitride films

    Energy Technology Data Exchange (ETDEWEB)

    Bergholz, Matthias; Schmeisser, Dieter [Brandenburgische Technische Universitaet, Cottbus (Germany). Angewandte Physik - Sensorik

    2008-07-01

    High-k dielectrics are important as never before in semiconductor industry. We investigate Pr{sub 2}O{sub 3} as one representative of this group on silicon and silicon-aluminium oxynitride substrates. In earlier work we observed the positive influence of this AlO{sub x}N{sub y} intermediate layer on the electrical properties of the Pr{sub 2}O{sub 3} layer. Now we present in-situ EELS, XPS and UPS measurements of gradually grown thin Pr{sub 2}O{sub 3} on AlO{sub x}N{sub y}. From these measurements we determine the band structure and find a very fast change of the band gap for the first few A, coupled with n-type behaviour for the Pr{sub 2}O{sub 3} film. These results are compared with RIXS measurements of a 5 nm Pr{sub 2}O{sub 3} on a 1 nm thick AlO{sub x}N{sub y} layer.

  9. Ferritin associates with marginal band microtubules

    International Nuclear Information System (INIS)

    Infante, Anthony A.; Infante, Dzintra; Chan, M.-C.; How, P.-C.; Kutschera, Waltraud; Linhartova, Irena; Muellner, Ernst W.; Wiche, Gerhard; Propst, Friedrich

    2007-01-01

    We characterized chicken erythrocyte and human platelet ferritin by biochemical studies and immunofluorescence. Erythrocyte ferritin was found to be a homopolymer of H-ferritin subunits, resistant to proteinase K digestion, heat stable, and contained iron. In mature chicken erythrocytes and human platelets, ferritin was localized at the marginal band, a ring-shaped peripheral microtubule bundle, and displayed properties of bona fide microtubule-associated proteins such as tau. Red blood cell ferritin association with the marginal band was confirmed by temperature-induced disassembly-reassembly of microtubules. During erythrocyte differentiation, ferritin co-localized with coalescing microtubules during marginal band formation. In addition, ferritin was found in the nuclei of mature erythrocytes, but was not detectable in those of bone marrow erythrocyte precursors. These results suggest that ferritin has a function in marginal band formation and possibly in protection of the marginal band from damaging effects of reactive oxygen species by sequestering iron in the mature erythrocyte. Moreover, our data suggest that ferritin and syncolin, a previously identified erythrocyte microtubule-associated protein, are identical. Nuclear ferritin might contribute to transcriptional silencing or, alternatively, constitute a ferritin reservoir

  10. Excited negative parity bands in 160Yb

    Science.gov (United States)

    Saha, A.; Bhattacharjee, T.; Curien, D.; Dedes, I.; Mazurek, K.; Banerjee, S. R.; Rajbanshi, S.; Bisoi, A.; de Angelis, G.; Bhattacharya, Soumik; Bhattacharyya, S.; Biswas, S.; Chakraborty, A.; Das Gupta, S.; Dey, B.; Goswami, A.; Mondal, D.; Pandit, D.; Palit, R.; Roy, T.; Singh, R. P.; Saha Sarkar, M.; Saha, S.; Sethi, J.

    2018-03-01

    Negative parity rotational bands in {} 70160Yb{}90 nucleus have been studied. They were populated in the 148Sm(16O, 4n)160Yb reaction at 90 MeV. The gamma-coincidence data have been collected using Indian National Gamma Array composed of twenty Compton suppressed clover germanium (Ge) detectors. Double gating on triple gamma coincidence data were selectively used to develop the decay scheme for these negative parity bands by identifying and taking care of the multiplet transitions. The even- and odd-spin negative parity bands in 160Yb have been studied by comparing the reduced transition probability ratios with the similar bands in neighbouring even-even rare earth nuclei. It is concluded that the concerned odd-spin and even-spin bands are not signature partners and that their structures are compatible with those of the ‘pear-shape’ and ‘pyramid-shape’ oscillations, respectively, the octupole shapes superposed with the quadrupole shape of the ground-state.

  11. Band gaps for the relativistic Mathieu potential

    International Nuclear Information System (INIS)

    Clerk, G.J.; McKellar, B.H.J.

    1992-01-01

    A study of the band structure of a massless particle in a cosine potential is made via the Dirac equation. It is shown that every alternate band gap disappears as a consequence of a periodicity of the potential combined with a peculiar symmetry of the Dirac equation. This basic potential is then used to study a simple one-dimensional model of the nucleus from which it is ascertained that modelling the mean field of the quarks in the nucleus via a pure scalar potential is unsatisfactory. A simple extension involving a combined scalar and vector potential is then proposed as a possible solution to this problem. The effect of the addition of this vector component to the band structure is also investigated. 32 refs

  12. What band rocks the MTB? (Invited)

    Science.gov (United States)

    Kind, J.; García-Rubio, I.; Gehring, A. U.

    2013-12-01

    Magnetotactic bacteria (MTB) are a polyphyletic group of bacteria that have been found in marine and lacustrine environments and soils [e.g. 1]. The hallmark of MTB is their intracellular formation of magnetosomes, single-domain ferrimagnetic particles that are aligned in chains. The chain configuration generates a strong magnetic dipole, which is used as magnetic compass to move the MTB into their favorable habit. The term band corresponds to a frequency window of microwaves in the gigahertz (GHz) range. Ferromagnetic resonance (FMR) spectroscopy uses the microwave absorption in a magnetic field to analyze the anisotropy properties and the domain state of magnetic materials. Specific microwave frequency causes absorption in a characteristic magnetic field range. For the investigation of MTB we use S-band (4.02 GHz), X-band (9.47 GHz), and Q-band (34.16 GHz). Experiments on cultured MTB and on sediment samples of Holocene age showed that absorption in X- and Q-band occurs when the sample is in a saturated or nearly saturated state [2, 3]. By contrast, absorption in the S-band appears in lower magnetic fields, where the sample is far from saturation. All FMR spectra show two distinct low-field features that can be assigned to magnetite particles in chains, aligned parallel and perpendicular to the external magnetic field. The detailed separation of the parallel and perpendicular components in the bulk samples is hampered, because of the random orientation of the chains in the sample. The comparison of S-, X-, and Q-band shows that the lower the frequency the better the separation of the components. In the S-band FMR spectroscopy, the separation of chains parallel to the external magnetic field is supported by the internal field of the sample. This field is caused by the remanence that contributes to the external magnetic field to fulfill the resonance condition [3,4]. Considering the different FMR responses, it can be postulated that a lower microwave frequency

  13. Some general constraints on identical band symmetries

    International Nuclear Information System (INIS)

    Guidry, M.W.; Strayer, M.R.; Wu, C.; Feng, D.H.

    1993-01-01

    We argue on general grounds that nearly identical bands observed for superdeformation and less frequently for normal deformation must be explicable in terms of a symmetry having a microscopic basis. We assume that the unknown symmetry is associated with a Lie algebra generated by terms bilinear in fermion creation and annihilation operators. Observed features of these bands and the general properties of Lie groups are then used to place constraints on acceptable algebras. Additional constraints are placed by assuming that the collective spectrum is associated with a dynamical symmetry, and examining the subgroup structure required by phenomenology. We observe that requisite symmetry cannot be unitary, and that the simplest known group structures consistent with these minimal criteria are associated with the Ginocchio algebras employed in the fermion dynamical symmetry model. However, our arguments are general in nature, and we propose that they imply model-independent constraints on any candidate explanation for identical bands

  14. Simplicial band depth for multivariate functional data

    KAUST Repository

    López-Pintado, Sara

    2014-03-05

    We propose notions of simplicial band depth for multivariate functional data that extend the univariate functional band depth. The proposed simplicial band depths provide simple and natural criteria to measure the centrality of a trajectory within a sample of curves. Based on these depths, a sample of multivariate curves can be ordered from the center outward and order statistics can be defined. Properties of the proposed depths, such as invariance and consistency, can be established. A simulation study shows the robustness of this new definition of depth and the advantages of using a multivariate depth versus the marginal depths for detecting outliers. Real data examples from growth curves and signature data are used to illustrate the performance and usefulness of the proposed depths. © 2014 Springer-Verlag Berlin Heidelberg.

  15. Exact folded-band chaotic oscillator.

    Science.gov (United States)

    Corron, Ned J; Blakely, Jonathan N

    2012-06-01

    An exactly solvable chaotic oscillator with folded-band dynamics is shown. The oscillator is a hybrid dynamical system containing a linear ordinary differential equation and a nonlinear switching condition. Bounded oscillations are provably chaotic, and successive waveform maxima yield a one-dimensional piecewise-linear return map with segments of both positive and negative slopes. Continuous-time dynamics exhibit a folded-band topology similar to Rössler's oscillator. An exact solution is written as a linear convolution of a fixed basis pulse and a discrete binary sequence, from which an equivalent symbolic dynamics is obtained. The folded-band topology is shown to be dependent on the symbol grammar.

  16. Kπ=0+ band moment of inertia anomaly

    International Nuclear Information System (INIS)

    Zeng, J.Y.; Wu, C.S.; Cheng, L.; Lin, C.Z.; China Center of Advanced Science and Technology

    1990-01-01

    The moments of inertia of K π =0 + bands in the well-deformed nuclei are calculated by a particle-number-conserving treatment for the cranked shell model. The very accurate solutions to the low-lying K π =0 + bands are obtained by making use of an effective K truncation. Calculations show that the main contribution to the moments of inertia comes from the nucleons in the intruding high-j orbits. Considering the fact that no free parameter is involved in the calculation and no extra inert core contribution is added, the agreement between the calculated and the observed moments of inertia of 0 + bands in 168 Er is very satisfactory

  17. Band Edge Dynamics and Multiexciton Generation in Narrow Band Gap HgTe Nanocrystals.

    Science.gov (United States)

    Livache, Clément; Goubet, Nicolas; Martinez, Bertille; Jagtap, Amardeep; Qu, Junling; Ithurria, Sandrine; Silly, Mathieu G; Dubertret, Benoit; Lhuillier, Emmanuel

    2018-04-11

    Mercury chalcogenide nanocrystals and especially HgTe appear as an interesting platform for the design of low cost mid-infrared (mid-IR) detectors. Nevertheless, their electronic structure and transport properties remain poorly understood, and some critical aspects such as the carrier relaxation dynamics at the band edge have been pushed under the rug. Some of the previous reports on dynamics are setup-limited, and all of them have been obtained using photon energy far above the band edge. These observations raise two main questions: (i) what are the carrier dynamics at the band edge and (ii) should we expect some additional effect (multiexciton generation (MEG)) as such narrow band gap materials are excited far above the band edge? To answer these questions, we developed a high-bandwidth setup that allows us to understand and compare the carrier dynamics resonantly pumped at the band edge in the mid-IR and far above the band edge. We demonstrate that fast (>50 MHz) photoresponse can be obtained even in the mid-IR and that MEG is occurring in HgTe nanocrystal arrays with a threshold around 3 times the band edge energy. Furthermore, the photoresponse can be effectively tuned in magnitude and sign using a phototransistor configuration.

  18. Side-band-separating heterodyne mixer for band 9 of ALMA.

    NARCIS (Netherlands)

    Mena, F. P.; Baryshev, A. M.; Kooi, J.; Lodewijk, C. F. J.; Gerlofsma, G.; Hesper, R.; Wild, W.; Shen, XC; Lu, W; Zhang, J; Dou, WB

    2006-01-01

    Here we present the realization of a side-band-separating (2SB) heterodyne mixer for the frequency range from 602 to 720 GHz (corresponding to ALMA band 9). The mixer, in brief, consists of a quadrature hybrid, two LO injectors, two SIS junctions, and three dumping loads. All the parts were modeled

  19. Elastic band prediction equations for combined free-weight and elastic band bench presses and squats.

    Science.gov (United States)

    Shoepe, Todd C; Ramirez, David A; Almstedt, Hawley C

    2010-01-01

    Elastic bands added to traditional free-weight techniques have become a part of suggested training routines in recent years. Because of the variable loading patterns of elastic bands (i.e., greater stretch produces greater resistance), it is necessary to quantify the exact loading patterns of bands to identify the volume and intensity of training. The purpose of this study was to determine the length vs. tension properties of multiple sizes of a set of commonly used elastic bands to quantify the resistance that would be applied to free-weight plus elastic bench presses (BP) and squats (SQ). Five elastic bands of varying thickness were affixed to an overhead support beam. Dumbbells of varying weights were progressively added to the free end while the linear deformation was recorded with each subsequent weight increment. The resistance was plotted as a factor of linear deformation, and best-fit nonlinear logarithmic regression equations were then matched to the data. For both the BP and SQ loading conditions and all band thicknesses tested, R values were greater than 0.9623. These data suggest that differences in load exist as a result of the thickness of the elastic band, attachment technique, and type of exercise being performed. Facilities should adopt their own form of loading quantification to match their unique set of circumstances when acquiring, researching, and implementing elastic band and free-weight exercises into the training programs.

  20. Band-gap and band-edge engineering of multicomponent garnet scintillators from first principles

    Czech Academy of Sciences Publication Activity Database

    Yadav, S.K.; Uberuaga, B.P.; Nikl, Martin; Jiang, C.; Stanek, C.R.

    2015-01-01

    Roč. 4, č. 5 (2015), "054012-1"-"054012-9" ISSN 2331-7019 R&D Projects: GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillator * electronic band gap structure * garnets * band gap engineering Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.061, year: 2015

  1. Interpolation of band-limited discrete-time signals by minimising out-of-band energy

    NARCIS (Netherlands)

    Janssen, A.J.E.M.; Vries, L.B.

    1984-01-01

    An interpolation method for restoring burst errors in discrete—time, band—limited signals is presented. The restoration is such that the restored signal has minimal out—of—band energy. The filter coefficients depend Only on the burst length and on the size of the band to which the signal is assumed

  2. Band to Band Tunneling (BBT) Induced Leakage Current Enhancement in Irradiated Fully Depleted SOI Devices

    Science.gov (United States)

    Adell, Phillipe C.; Barnaby, H. J.; Schrimpf, R. D.; Vermeire, B.

    2007-01-01

    We propose a model, validated with simulations, describing how band-to-band tunneling (BBT) affects the leakage current degradation in some irradiated fully-depleted SOI devices. The dependence of drain current on gate voltage, including the apparent transition to a high current regime is explained.

  3. Modelling band-to-band tunneling current in InP-based heterostructure photonic devices

    NARCIS (Netherlands)

    van Engelen, J.P.; Shen, L.; van der Tol, J.J.G.M.; Smit, M.K.; Kockaert, P.; Emplit, P.; Gorza, S.-P.; Massar, S.

    2015-01-01

    Some semiconductor photonic devices show large discontinuities in the band structure. Short tunnel paths caused by this band structure may lead to an excessive tunneling current, especially in highly doped layers. Modelling of this tunnelling current is therefore important when designing photonic

  4. Structure of dipole bands in 106In

    International Nuclear Information System (INIS)

    Deo, A. Y.; Palit, R.; Naik, Z.; Joshi, P. K.; Mazumdar, I.; Sihotra, S.; Mehta, D.; Kumar, S.; Chakrabarti, R.; Kshetri, R.; Jain, H. C.

    2009-01-01

    High spin states in neutron-deficient 106 In were investigated using 78 Se( 32 S,p3n) reaction at 125 MeV. The level scheme is extended up to 7 MeV of excitation energy for the negative parity states constituting four dipole bands, and the positive parity states which mainly exhibit single-particle excitations are extended up to 5 MeV. Projected deformed Hartree-Fock calculations were carried out to understand the configurations of different bands in this nucleus.

  5. Maximizing band gaps in plate structures

    DEFF Research Database (Denmark)

    Halkjær, Søren; Sigmund, Ole; Jensen, Jakob Søndergaard

    2006-01-01

    periodic plate using Bloch theory, which conveniently reduces the maximization problem to that of a single base cell. Secondly, we construct a finite periodic plate using a number of the optimized base cells in a postprocessed version. The dynamic properties of the finite plate are investigated......Band gaps, i.e., frequency ranges in which waves cannot propagate, can be found in elastic structures for which there is a certain periodic modulation of the material properties or structure. In this paper, we maximize the band gap size for bending waves in a Mindlin plate. We analyze an infinite...... theoretically and experimentally and the issue of finite size effects is addressed....

  6. Itinerant ferromagnetism in the narrow band limit

    CERN Document Server

    Liu, S H

    2000-01-01

    It is shown that in the narrow band, strong interaction limit the paramagnetic state of an itinerant ferromagnet is described by the disordered local moment state. As a result, the Curie temperature is orders of magnitude lower than what is expected from the large exchange splitting of the spin bands. An approximate analysis has also been carried out for the partially ordered state, and the result explains the temperature evolvement of the magnetic contributions to the resistivity and low-energy optical conductivity of CrO sub 2.

  7. Proximal iliotibial band syndrome: case report

    Directory of Open Access Journals (Sweden)

    Guilherme Guadagnini Falotico

    2013-08-01

    Full Text Available OBJECTIVE: The overuse injuries in the hip joint occur commonly in sports practitioners and currently due to technical advances in diagnostic imaging, especially magnetic resonance imaging (MRI, are often misdiagnosed. Recently, a group of people were reported, all female, with pain and swelling in the pelvic region.T2-weighted MRI showed increased signal in the enthesis of the iliotibial band (ITB along the lower border of the iliac tubercle. We report a case of a 34 year old woman, non-professional runner, with pain at the iliac crest with no history of trauma and whose MRI was compatible with the proximal iliotibial band syndrome.

  8. Electron currents associated with an auroral band

    International Nuclear Information System (INIS)

    Spiger, R.J.; Anderson, H.R.

    1975-01-01

    Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed

  9. Electron currents associated with an auroral band

    Science.gov (United States)

    Spiger, R. J.; Anderson, H. R.

    1975-01-01

    Measurements of electron pitch angle distributions and energy spectra over a broad auroral band were used to calculate net electric current carried by auroral electrons in the vicinity of the band. The particle energy spectrometers were carried by a Nike-Tomahawk rocket launched from Poker Flat, Alaska, at 0722 UT on February 25, 1972. Data are presented which indicate the existence of upward field-aligned currents of electrons in the energy range 0.5-20 keV. The spatial relationship of these currents to visual structure of the auroral arc and the characteristics of the electrons carrying the currents are discussed.

  10. Ka-band waveguide rotary joint

    KAUST Repository

    Yevdokymov, Anatoliy

    2013-04-11

    The authors present a design of a waveguide rotary joint operating in Ka-band with central frequency of 33 GHz, which also acts as an antenna mount. The main unit consists of two flanges with a clearance between them; one of the flanges has three circular choke grooves. Utilisation of three choke grooves allows larger operating clearance. Two prototypes of the rotary joint have been manufactured and experimentally studied. The observed loss is from 0.4 to 0.8 dB in 1.5 GHz band.

  11. Band theory of metals the elements

    CERN Document Server

    Altmann, Simon L

    1970-01-01

    Band Theory of Metals: The Elements focuses on the band theory of solids. The book first discusses revision of quantum mechanics. Topics include Heisenberg's uncertainty principle, normalization, stationary states, wave and group velocities, mean values, and variational method. The text takes a look at the free-electron theory of metals, including heat capacities, density of states, Fermi energy, core and metal electrons, and eigenfunctions in three dimensions. The book also reviews the effects of crystal fields in one dimension. The eigenfunctions of the translations; symmetry operations of t

  12. Banding of connection standards for distributed generation

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-05-04

    This report presents the views of distributed network operators (DNOs), developers, equipment manufacturers and consultants on the current banding of distributed generation in terms of connection standards and recommendations. The Documents ER G59/1, ER G75/1, ER G83/1 and ETR 113/1 covering recommendations for the connection of embedded generating plant to distribution systems and guidance notes for the protection of embedded generating plant are examined. The way in which the recommendations are applied in practice is investigated. Multiple distribution generator installations, fault ride through, and banding are considered as well as both protection required and maximum generator sizes at respective voltage levels.

  13. Quantum numbers and band topology of nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Damnjanovic, M [Faculty of Physics, University of Belgrade, POB 368, 11001 Belgrade (Yugoslavia); Milosevic, I [Faculty of Physics, University of Belgrade, POB 368, 11001 Belgrade (Yugoslavia); Vukovic, T [Faculty of Physics, University of Belgrade, POB 368, 11001 Belgrade (Yugoslavia); Maultzsch, J [Institut fuer Festkoerper Physik, Technische Universitaet Berlin, Hardenbergstr. 36, 10623 Berlin (Germany)

    2003-05-30

    Nanotubes as well as polymers and quasi-1D subsystems of 3D crystals have line group symmetry. This allows two types of quantum numbers: roto-translational and helical. The roto-translational quantum numbers are linear and total angular (not conserved) momenta, while the helical quantum numbers are helical and complementary angular momenta. Their mutual relations determine some topological properties of energy bands, such as systematic band sticking or van Hove singularities related to parities. The importance of these conclusions is illustrated by the optical absorption in carbon nanotubes: parity may prevent absorption peaks at van Hove singularities.

  14. Quantum numbers and band topology of nanotubes

    International Nuclear Information System (INIS)

    Damnjanovic, M; Milosevic, I; Vukovic, T; Maultzsch, J

    2003-01-01

    Nanotubes as well as polymers and quasi-1D subsystems of 3D crystals have line group symmetry. This allows two types of quantum numbers: roto-translational and helical. The roto-translational quantum numbers are linear and total angular (not conserved) momenta, while the helical quantum numbers are helical and complementary angular momenta. Their mutual relations determine some topological properties of energy bands, such as systematic band sticking or van Hove singularities related to parities. The importance of these conclusions is illustrated by the optical absorption in carbon nanotubes: parity may prevent absorption peaks at van Hove singularities

  15. Quantum numbers and band topology of nanotubes

    CERN Document Server

    Damnjanovic, M; Vukovic, T; Maultzsch, J

    2003-01-01

    Nanotubes as well as polymers and quasi-1D subsystems of 3D crystals have line group symmetry. This allows two types of quantum numbers: roto-translational and helical. The roto-translational quantum numbers are linear and total angular (not conserved) momenta, while the helical quantum numbers are helical and complementary angular momenta. Their mutual relations determine some topological properties of energy bands, such as systematic band sticking or van Hove singularities related to parities. The importance of these conclusions is illustrated by the optical absorption in carbon nanotubes: parity may prevent absorption peaks at van Hove singularities.

  16. Neutron transmission bands in one dimensional lattices

    International Nuclear Information System (INIS)

    Monsivais, G.; Moshinsky, M.

    1999-01-01

    The original Kronig-Penney lattice, which had delta function interactions at the end of each of the equal segments, seems a good model for the motion of neutrons in a linear lattice if the strength b of the δ functions depends of the energy of the neutrons, i.e., b(E). We derive the equation for the transmission bands and consider the relations of b(E) with the R(E) function discussed in a previous paper. We note the great difference in the behavior of the bands when b(E) is constant and when it is related with a single resonance of the R function. (Author)

  17. Band gap and band offset of (GaIn)(PSb) lattice matched to InP

    Science.gov (United States)

    Köhler, F.; Böhm, G.; Meyer, R.; Amann, M.-C.

    2005-07-01

    Metastable (GaxIn1-x)(PySb1-y) layers were grown on (001) InP substrates by gas source molecular beam epitaxy. Low-temperature photoluminescence spectroscopy was applied to these heterostructures and revealed spatially indirect band-to-band recombination of electrons localized in the InP with holes in the (GaxIn1-x)(PySb1-y). In addition, samples with layer thicknesses larger than 100nm showed direct PL across the band gap of (GaxIn1-x)(PySb1-y). Band-gap energies and band offset energies of (GaxIn1-x)(PySb1-y) relative to InP were derived from these PL data. A strong bowing parameter was observed.

  18. ANALISIS TIPOGRAFI PADA LOGOTYPE BAND FORGOTTEN

    Directory of Open Access Journals (Sweden)

    Atang Riyan Isnandar

    2016-12-01

    Full Text Available Abstrak Forgotten merupakan band asal kota Bandung yang beraliran death metal. Band ini telah memiliki beberapa album yang cukup sukses. Salah satu faktor yang turut berperan penting dalam album-album Forgotten adalah desain sampul album. Sampul album merupakan identitas dan pesan dari musik yang dibawakan oleh Forgotten. Dalam sampul album, terdapat salah satu elemen visual yaitu Tipografi. Salah satu peran tipografi dalam sampul album Forgotten adalah sebagai logotype dari band. Yang menarik, dari lima album yang telah dirilis Forgotten yaitu “Future Syndrome” (1997, “Obsesi Mati” (2000, “Tuhan Telah Mati” (2001, “Tiga Angka Enam” (2003 dan “Laras Perlaya” (2011 adalah tampilan logotype band yang selalu berbeda. Perubahan logotype Forgotten disebabkan oleh beberapa faktor seperti adanya perubahan selera, transformasi musik dan pergantian personil yang dialami oleh band Forgotten. Perubahan ini berakibat pada munculnya kesan visual yang berbeda-beda dari masing-masing logotype di setiap sampul albumnya. Apalagi logotype band dengan genre death metal memiliki kecendrungan yang unik, dekoratif, bahkan sulit untuk dibaca. Oleh karena itu untuk mengetahui kesan visual yang dimunculkan oleh setiap logotype akan dilakukan penelitian dengan pendekatan tipografi. Tujuan dari penelitian ini adalah selain untuk mengetahui perubahan logotype dari kelima sampul album yang telah dirilis oleh Forgotten juga ingin mengetahui kesan visual terhadap tipografi terkait dengan prinsip kejelasan (legibility, keterbacaan (readability dan kemampuannya untuk dilihat pada jarak tertentu (visibility. Kata Kunci: Sampul Album, Tipografi, Logotype, Forgotten Abstract Forgotten is a band from Bandung, the death metal genre. The band has had some fairly successful album. One of important factor in albums Forgotten is the album cover design. The album cover are the identity and the message of the music performed by the Forgotten. In the cover of the album

  19. 47 CFR 15.715 - TV bands database administrator.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 1 2010-10-01 2010-10-01 false TV bands database administrator. 15.715 Section... Band Devices § 15.715 TV bands database administrator. The Commission will designate one or more entities to administer a TV bands database. Each database administrator shall: (a) Maintain a database that...

  20. New Kronig-Penney Equation Emphasizing the Band Edge Conditions

    Science.gov (United States)

    Szmulowicz, Frank

    2008-01-01

    The Kronig-Penney problem is a textbook example for discussing band dispersions and band gap formation in periodic layered media. For example, in photonic crystals, the behaviour of bands next to the band edges is important for further discussions of such effects as inhibited light emission, slow light and negative index of refraction. However,…

  1. 47 CFR 15.714 - TV bands database administration fees.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 1 2010-10-01 2010-10-01 false TV bands database administration fees. 15.714... Television Band Devices § 15.714 TV bands database administration fees. (a) A TV bands database administrator may charge a fee for provision of lists of available channels to fixed and personal/portable TVBDs and...

  2. 47 CFR 15.713 - TV bands database.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 1 2010-10-01 2010-10-01 false TV bands database. 15.713 Section 15.713... TV bands database. (a) Purpose. The TV bands database serves the following functions: (1) To... databases. (b) Information in the TV bands database. (1) Facilities already recorded in Commission databases...

  3. Bands and chromosome arrangement in interphase nuclei

    International Nuclear Information System (INIS)

    Bianchi, N.O.; Bianchi, M.A.; Matayoshi, T.

    1977-01-01

    Chromosomes from the vole mouse Akodon dolores and from laboratory mouse showed the presence of G-bands after 3 minutes digestion with trypsin and Giemsa stain. Simultaneously, 30- to 40% of the interphase nuclei exhibited a dark ring parallel to the nuclear contour and a radial array of the chromatin in the internal and external regions of the ring. The origin and meaning of this ring image was analyzed by combining progressive trypsinizations with other methods such as C-banding procedures, autoradiography with 3 HTdR, staining with quinacrine mustard and 33258 Hoechst fluorochromes. Moreover, the presence of the dark ring was also investigated in cells treated with actinomycin and in control cells not subjected to any treatment. The results obtained allowed to assume that in interphase nuclei the chromosomes have chromatin bridges which connect the dark G-bands and that these bridges are probably involved in maintaining an ordered architecture of the nucleus with fixed chromosome positions in regard to the nuclear envelope and in regard to other chromosomes. Trypsinization produces a disruption of the interphase chromatin arrangement and the subsequent appearance of a dark ring formed by the combination of constitutive heterochromatin and dark G-bands. (auth.)

  4. Deformed configurations, band structures and spectroscopic ...

    Indian Academy of Sciences (India)

    2014-03-20

    Mar 20, 2014 ... The deformed configurations and rotational band structures in =50 Ge and Se nuclei are studied by deformed Hartree–Fock with quadrupole constraint and angular momentum projection. Apart from the `almost' spherical HF solution, a well-deformed configuration occurs at low excitation. A deformed ...

  5. VIBRONIC PROGRESSIONS IN SEVERAL DIFFUSE INTERSTELLAR BANDS

    International Nuclear Information System (INIS)

    Duley, W. W.; Kuzmin, Stanislav

    2010-01-01

    A number of vibronic progressions based on low-energy vibrational modes of a large molecule have been found in the diffuse interstellar band (DIB) spectrum of HD 183143. Four active vibrational modes have been identified with energies at 5.18 cm -1 , 21.41 cm -1 , 31.55 cm -1 , and 34.02 cm -1 . The mode at 34.02 cm -1 was previously recognized by Herbig. Four bands are associated with this molecule, with origins at 6862.61 A, 6843.64 A, 6203.14 A, and 5545.11 A (14589.1 cm -1 , 14608.08 cm -1 , 16116.41 cm -1 , and 18028.9 cm -1 , respectively). The progressions are harmonic and combination bands are observed involving all modes. The appearance of harmonic, rather than anharmonic, terms in these vibronic progressions is consistent with torsional motion of pendant rings, suggesting that the carrier is a 'floppy' molecule. Some constraints on the type and size of the molecule producing these bands are discussed.

  6. Statistical study of auroral omega bands

    Directory of Open Access Journals (Sweden)

    N. Partamies

    2017-09-01

    Full Text Available The presence of very few statistical studies on auroral omega bands motivated us to test-use a semi-automatic method for identifying large-scale undulations of the diffuse aurora boundary and to investigate their occurrence. Five identical all-sky cameras with overlapping fields of view provided data for 438 auroral omega-like structures over Fennoscandian Lapland from 1996 to 2007. The results from this set of omega band events agree remarkably well with previous observations of omega band occurrence in magnetic local time (MLT, lifetime, location between the region 1 and 2 field-aligned currents, as well as current density estimates. The average peak emission height of omega forms corresponds to the estimated precipitation energies of a few keV, which experienced no significant change during the events. Analysis of both local and global magnetic indices demonstrates that omega bands are observed during substorm expansion and recovery phases that are more intense than average substorm expansion and recovery phases in the same region. The omega occurrence with respect to the substorm expansion and recovery phases is in a very good agreement with an earlier observed distribution of fast earthward flows in the plasma sheet during expansion and recovery phases. These findings support the theory that omegas are produced by fast earthward flows and auroral streamers, despite the rarity of good conjugate observations.

  7. Collective states in 230Th: band structure

    Directory of Open Access Journals (Sweden)

    A. I. Levon

    2009-12-01

    Full Text Available Experimental data for the excited states in the deformed nucleus 230Th studied in the (p, t reaction are analyzed. Sequences of the states are selected which can be treated as rotational bands and as multiplets of excitations. Experimental data are compared with the interacting boson model (IBM and the quasiparticle-phonon model (QPM calculations.

  8. Study on electromagnetic constants of rotational bands

    International Nuclear Information System (INIS)

    Abdurazakov, A.A.; Adib, Yu.Sh.; Karakhodzhaev, A.K.

    1991-01-01

    Values of electromagnetic constant S and rotation bands of odd nuclei with Z=64-70 within the mass number change interval A=153-173 are determined. Values of γ-transition mixing parameter with M1+E2 multipolarity are presented. ρ parameter dependence on mass number A is discussed

  9. High spin rotational bands in Zn

    Indian Academy of Sciences (India)

    We present here some preliminary results from our studies in the. ~ ¼ region in which we have observed an yrast band structure in Zn extending to spin (41/2 ). ... gaps implies that nuclei may exhibit different shapes at different excitation energies. .... uration, identifying previously unobserved states up to an excitation energy ...

  10. Energy bands and gaps near an impurity

    Czech Academy of Sciences Publication Activity Database

    Mihóková, Eva; Schulman, L. S.

    2016-01-01

    Roč. 380, č. 41 (2016), s. 3430-3433 ISSN 0375-9601 R&D Projects: GA ČR GA13-09876S Institutional support: RVO:68378271 Keywords : crystal structure * impurity * modeling * energy bands Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.772, year: 2016

  11. Ka-band waveguide rotary joint

    KAUST Repository

    Yevdokymov, Anatoliy; Sirenko, Kostyantyn; Kryzhanovskiy, Volodymyr; Pazynin, Vadim

    2013-01-01

    The authors present a design of a waveguide rotary joint operating in Ka-band with central frequency of 33 GHz, which also acts as an antenna mount. The main unit consists of two flanges with a clearance between them; one of the flanges has three

  12. A Shear Banding Model for Penetration Calculations

    Science.gov (United States)

    2000-04-01

    mechanism of strength reduction to zero within a shear band in three different steels, includ- ing AISI 4340 with RHC 44, which is reasonably similar to RHA...TECH LIB CHINA LAKE CA 93555-6001 CDR NAVAL SUR WAR CTR C S COFFEY PPARK FZERILLI CODE 4140 R K GARRET JR JMCKIRGAN TECH LIB 101 STRAUSS AVE

  13. Electron band theory 1952-1962

    International Nuclear Information System (INIS)

    Lomer, W.M.

    1980-01-01

    Work undertaken by the Theoretical Physics Division between 1952 and 1965 to obtain an understanding of electrons in metals, with uranium and the actinides and the structurally-important transition metals as the main targets is examined. A main result of that period was a conviction that the majority of the physical properties of all metals, except the 4f rare-earth series and the actinides beyond uranium, were dominated by band effects which could be described well enough for most purposes by simple one-electron calculations with simple self-consistent fields. The period from 1960 on showed increasingly clearly the necessity of incorporating relativistic spin-orbit coupling terms in the heavy metals, and some 'local exchange field' correction to the fields close to nuclei. The problems of the non-local interaction of spins - highly important for alloy theory and for antiferromagnetic instability -required the evolution of computers large enough to produce wave-functions at all wave-vectors for all bands so that the susceptibility at arbitrary wave-vector could be computed. This work has not proved to be very illuminating so far, and much interest again focusses today on heuristic arguments that give qualitative descriptions of band structures, such as canonical d-bands to account for crystal structure. (UK)

  14. Phononic band gap structures as optimal designs

    DEFF Research Database (Denmark)

    Jensen, Jakob Søndergaard; Sigmund, Ole

    2003-01-01

    In this paper we use topology optimization to design phononic band gap structures. We consider 2D structures subjected to periodic loading and obtain the distribution of two materials with high contrast in material properties that gives the minimal vibrational response of the structure. Both in...

  15. The end of the unique myocardial band

    DEFF Research Database (Denmark)

    MacIver, David H; Partridge, John B; Agger, Peter

    2018-01-01

    Two of the leading concepts of mural ventricular architecture are the unique myocardial band and the myocardial mesh model. We have described, in an accompanying article published in this journal, how the anatomical, histological and high-resolution computed tomographic studies strongly favour th...

  16. Piecewise planar Möbius bands

    DEFF Research Database (Denmark)

    Gravesen, Jens

    2005-01-01

    t is shown that a closed polygon with an odd number of vertices is the median of exactly one piecewise planar cylinder and one piecewise planar Möbius band, intersecting each other orthogonally. A closed polygon with an even number of vertices is in the generic case neither the median...

  17. PHARUS: A C-band Airborne SAR

    NARCIS (Netherlands)

    Hoogeboom, P.; Koomen, P.J.; Pouwels, H.; Snoeij, P.

    1990-01-01

    In The Netherlands a plan to design aircraft and build a polarimetric C-band SAR system of a novel design, called PHARUS (PHased Array Universal SAR) is carried out by three institutes. These institutes are the Physics and Electronics Laboratory TNO in The Hague (prime contractor and project

  18. Faraday Rotation and L Band Oceanographic Measurements

    DEFF Research Database (Denmark)

    Skou, Niels

    2003-01-01

    Spaceborne radiometric measurements of the L band brightness temperature over the oceans make it possible to estimate sea surface salinity. However, Faraday rotation in the ionosphere disturbs the signals and must be corrected. Two different ways of assessing the disturbance directly from...

  19. UWB Filtering Power Divider with Two Narrow Notch-bands and Wide Stop-band

    Science.gov (United States)

    Wei, Feng; Wang, Xin-Yi; Zou, Xin Tong; Shi, Xiao Wei

    2017-12-01

    A compact filtering ultra-wideband (UWB) microstrip power divider (PD) with two sharply rejected notch-bands and wide stopband is analyzed and designed in this paper. The proposed UWB PD is based on a conventional Wilkinson power divider, while two stub loaded resonators (SLRs) are coupled into two symmetrical output ports to achieve a bandpass filtering response. The simplified composite right/left-handed (SCRLH) resonators are employed to generate the dual notched bands. Defected ground structure (DGS) is introduced to improve the passband performance. Good insertion/return losses, isolation and notch-band rejection are achieved as demonstrated in both simulation and experiment.

  20. The marginal band system in nymphalid butterfly wings.

    Science.gov (United States)

    Taira, Wataru; Kinjo, Seira; Otaki, Joji M

    2015-01-01

    Butterfly wing color patterns are highly complex and diverse, but they are believed to be derived from the nymphalid groundplan, which is composed of several color pattern systems. Among these pattern systems, the marginal band system, including marginal and submarginal bands, has rarely been studied. Here, we examined the color pattern diversity of the marginal band system among nymphalid butterflies. Marginal and submarginal bands are usually expressed as a pair of linear bands aligned with the wing margin. However, a submarginal band can be expressed as a broken band, an elongated oval, or a single dot. The marginal focus, usually a white dot at the middle of a wing compartment along the wing edge, corresponds to the pupal edge spot, one of the pupal cuticle spots that signify the locations of color pattern organizing centers. A marginal band can be expressed as a semicircle, an elongated oval, or a pair of eyespot-like structures, which suggest the organizing activity of the marginal focus. Physical damage at the pupal edge spot leads to distal dislocation of the submarginal band in Junonia almana and in Vanessa indica, suggesting that the marginal focus functions as an organizing center for the marginal band system. Taken together, we conclude that the marginal band system is developmentally equivalent to other symmetry systems. Additionally, the marginal band is likely a core element and the submarginal band a paracore element of the marginal band system, and both bands are primarily specified by the marginal focus organizing center.

  1. Dosimetry of narrow band UVB treatments

    International Nuclear Information System (INIS)

    Goode, D.H.; Mannering, D.M.

    1996-01-01

    Full text: For many years psoriasis has been treated with broad band UVB lamps. These lamps have a bell shaped spectrum which peaks at 305 nm and extends from 280 nm to 350 nm. However research with monochromatic UV radiation has shown that wavelengths between 300 nm and 320 nm are the most efficacious for clearing psoriasis while wavelengths below 305 nm are most effective for producing the undesirable side effect of erythema (sunburn). In response to these findings Philips developed a narrow band UVB tube in which a large fraction of the output was confined to a narrow peak (bandwidth 2.5 nm) situated at 311 nm. Christchurch Hospital replaced broad band UVB with narrow band treatments in August 1995 and as this required UV exposures to be substantially increased new protocols had to be developed. Three aspects needed to be addressed. These were translating the dose from broad band to narrow band for current patients, determining the initial dose for new patients and developing a formula for increasing subsequent exposures to both types of patient. To translate doses the spectral irradiance (μW/cm 2 /nm) that would fall on the patient was measured in both the old broad band and the new narrow band treatment units and from this UV doses were calculated. All doses were expressed in mJ/cm 2 of unweighted UV over the range 250 nm to 400 nm. The erythemal effectiveness of the two units were compared by using the CIE 1987 curve to express doses in terms of the equivalent exposure of monochromatic 297 nm radiation. It was found that an exposure of 3.96 mJ/cm 2 from the broad band FS40 tubes and 12.79 mJ/cm 2 from the narrow band TL/01 tubes were both equivalent to 1.00 mJ/cm 2 of monochromatic 297 nm radiation so when transferring patients all broad band doses needed to be increased by a factor of 3.2. Before transferring any patients this factor was confirmed by conducting two minimal erythema dose (MED) tests on a normal subject, one in each unit. For new patients a

  2. 50 MW C-band pulse klystron; 50MW C band pulse klystron

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1999-03-01

    C-band pulse klystron E3746 with an output of 50 MW class was developed jointly with the High-Energy Accelerator Research Organization in the Ministry of Education as the klystron for a linear accelerator. For a large-sized linear accelerator in the next generation, a klystron with higher operating frequency has been required to obtain a compact and efficient accelerator. In E3746, the problem of power resistance during high-frequency operation was solved by mounting a traveling-wave multi-cell output circuit. Moreover, stable operation in the pulse width of 2.5 {mu}s and the output of 54 MW was performed at the same operation efficiency (44%) as the conventional S-band tube by using the frequency (in a C-band frequency band) that is two times as high as the conventional general accelerator. (translated by NEDO)

  3. Comparison of band-to-band tunneling models in Si and Si—Ge junctions

    International Nuclear Information System (INIS)

    Jiao Yipeng; Wang Taihuan; Wei Kangliang; Du Gang; Liu Xiaoyan

    2013-01-01

    We compared several different band-to-band tunneling (BTBT) models with both Sentaurus and the two-dimensional full-band Monte Carlo simulator in Si homo-junctions and Si—Ge hetero-junctions. It was shown that in Si homo-junctions, different models could achieve similar results. However, in the Si—Ge hetero-junctions, there were significant differences among these models at high reverse biases (over 2 V). Compared to the nonlocal model, the local models in Sentaurus underrated the BTBT rate distinctly, and the Monte Carlo method was shown to give a better approximation. Additionally, it was found that in the Si region near the interface of the Si—Ge hetero-junctions, the direct tunneling rates increased largely due to the interaction of the band structures of Si and Ge. (semiconductor physics)

  4. Design of Dual-Band Two-Branch-Line Couplers with Arbitrary Coupling Coefficients in Bands

    Directory of Open Access Journals (Sweden)

    I. Prudyus

    2014-12-01

    Full Text Available A new approach to design dual-band two-branch couplers with arbitrary coupling coefficients at two operating frequency bands is proposed in this article. The method is based on the usage of equivalent subcircuits input reactances of the even-mode and odd-mode excitations. The exact design formulas for three options of the dual-band coupler with different location and number of stubs are received. These formulas permit to obtain the different variants for each structure in order to select the physically realizable solution and can be used in broad range of frequency ratio and power division ratio. For verification, three different dual-band couplers, which are operating at 2.4/3.9 GHz with different coupling coefficients (one with 3/6 dB, and 10/3 dB two others are designed, simulated, fabricated and tested. The measured results are in good agreement with the simulated ones.

  5. Band connectivity for topological quantum chemistry: Band structures as a graph theory problem

    Science.gov (United States)

    Bradlyn, Barry; Elcoro, L.; Vergniory, M. G.; Cano, Jennifer; Wang, Zhijun; Felser, C.; Aroyo, M. I.; Bernevig, B. Andrei

    2018-01-01

    The conventional theory of solids is well suited to describing band structures locally near isolated points in momentum space, but struggles to capture the full, global picture necessary for understanding topological phenomena. In part of a recent paper [B. Bradlyn et al., Nature (London) 547, 298 (2017), 10.1038/nature23268], we have introduced the way to overcome this difficulty by formulating the problem of sewing together many disconnected local k .p band structures across the Brillouin zone in terms of graph theory. In this paper, we give the details of our full theoretical construction. We show that crystal symmetries strongly constrain the allowed connectivities of energy bands, and we employ graph theoretic techniques such as graph connectivity to enumerate all the solutions to these constraints. The tools of graph theory allow us to identify disconnected groups of bands in these solutions, and so identify topologically distinct insulating phases.

  6. Band head spin assignment of superdeformed bands in 133Pr using two-parameter formulae

    Science.gov (United States)

    Sharma, Honey; Mittal, H. M.

    2018-03-01

    The two-parameter formulae viz. the power index formula, the nuclear softness formula and the VMI model are adopted to accredit the band head spin (I0) of four superdeformed rotational bands in 133Pr. The technique of least square fitting is used to accredit the band head spin for four superdeformed rotational bands in 133Pr. The root mean deviation among the computed transition energies and well-known experimental transition energies are attained by extracting the model parameters from the two-parameter formulae. The determined transition energies are in excellent agreement with the experimental transition energies, whenever exact spins are accredited. The power index formula coincides well with the experimental data and provides minimum root mean deviation. So, the power index formula is more efficient tool than the nuclear softness formula and the VMI model. The deviation of dynamic moment of inertia J(2) against the rotational frequency is also examined.

  7. Transport in bilayer and trilayer graphene: band gap engineering and band structure tuning

    Science.gov (United States)

    Zhu, Jun

    2014-03-01

    Controlling the stacking order of atomically thin 2D materials offers a powerful tool to control their properties. Linearly dispersed bands become hyperbolic in Bernal (AB) stacked bilayer graphene (BLG). Both Bernal (ABA) and rhombohedral (ABC) stacking occur in trilayer graphene (TLG), producing distinct band structures and electronic properties. A symmetry-breaking electric field perpendicular to the sample plane can further modify the band structures of BLG and TLG. In this talk, I will describe our experimental effort in these directions using dual-gated devices. Using thin HfO2 film deposited by ALD as gate dielectric, we are able to apply large displacement fields D > 6 V/nm and observe the opening and saturation of the field-induced band gap Eg in bilayer and ABC-stacked trilayer graphene, where the conduction in the mid gap changes by more than six decades. Its field and temperature dependence highlights the crucial role played by Coulomb disorder in facilitating hopping conduction and suppressing the effect of Eg in the tens of meV regime. In contrast, mid-gap conduction decreases with increasing D much more rapidly in clean h-BN dual-gated devices. Our studies also show the evolution of the band structure in ABA-stacked TLG, in particular the splitting of the Dirac-like bands in large D field and the signatures of two-band transport at high carrier densities. Comparison to theory reveals the need for more sophisticated treatment of electronic screening beyond self-consistent Hartree calculations to accurately predict the band structures of trilayer graphene and graphenic materials in general.

  8. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  9. Development of softcopy environment for primary color banding visibility assessment

    Science.gov (United States)

    Min, Byungseok; Pizlo, Zygmunt; Allebach, Jan P.

    2008-01-01

    Fine-pitch banding is one of the most unwanted artifacts in laser electrophotographic (EP) printers. It is perceived as a quasiperiodic fluctuation in the process direction. Therefore, it is essential for printer vendors to know how banding is perceived by humans in order to improve print quality. Monochrome banding has been analyzed and assessed by many researchers; but there is no literature that deals with the banding of color laser printers as measured from actual prints. The study of color banding is complicated by the fact that the color banding signal is physically defined in a three-dimensional color space, while banding perception is described in a one-dimensional sense such as more banding or less banding. In addition, the color banding signal arises from the independent contributions of the four primary colorant banding signals. It is not known how these four distinct signals combine to give rise to the perception of color banding. In this paper, we develop a methodology to assess the banding visibility of the primary colorant cyan based on human visual perception. This is our first step toward studying the more general problem of color banding in combinations of two or more colorants. According to our method, we print and scan the cyan test patch, and extract the banding profile as a one dimensional signal so that we can freely adjust the intensity of banding. Thereafter, by exploiting the pulse width modulation capability of the laser printer, the extracted banding profile is used to modulate a pattern consisting of periodic lines oriented in the process direction, to generate extrinsic banding. This avoids the effect of the halftoning algorithm on the banding. Furthermore, to conduct various banding assessments more efficiently, we also develop a softcopy environment that emulates a hardcopy image on a calibrated monitor, which requires highly accurate device calibration throughout the whole system. To achieve the same color appearance as the hardcopy

  10. Structural Evolution of a Warm Frontal Precipitation Band During GCPEx

    Science.gov (United States)

    Colle, Brian A.; Naeger, Aaron; Molthan, Andrew; Nesbitt, Stephen

    2015-01-01

    A warm frontal precipitation band developed over a few hours 50-100 km to the north of a surface warm front. The 3-km WRF was able to realistically simulate band development, although the model is somewhat too weak. Band genesis was associated with weak frontogenesis (deformation) in the presence of weak potential and conditional instability feeding into the band region, while it was closer to moist neutral within the band. As the band matured, frontogenesis increased, while the stability gradually increased in the banding region. Cloud top generating cells were prevalent, but not in WRF (too stable). The band decayed as the stability increased upstream and the frontogenesis (deformation) with the warm front weakened. The WRF may have been too weak and short-lived with the band because too stable and forcing too weak (some micro issues as well).

  11. Nanoindentation hardness of banded Australian sedimentary opal

    Energy Technology Data Exchange (ETDEWEB)

    Thomas, P S; Smallwood, A S; Ray, A S [Department of Chemistry, Material and Forensic Science, University of Technology Sydney, PO Box 123, Broadway, NSW 2007 (Australia); Briscoe, B J; Parsonage, D [Department of Chemical Engineering and Chemical Technology, Imperial College of Science, Technology and Medicine, London, SW7 2AZ (United Kingdom)], E-mail: paul.thomas@uts.edu.au

    2008-04-07

    Nanoindentation hardness data in continuous stiffness mode are reported for banded potch and play of colour opals sourced from Lightning Ridge in New South Wales and Andamooka in South Australia. Despite the significant visible heterogeneities observed and the significant differences in origin and microstructures, as observed by SEM, and subtle differences in the elemental distributions between bands within specimens, little difference was observed in the mechanical properties. Specimens were found to be mechanically homogeneous and values of the hardness and moduli were found to be similar between samples. The creep behaviour of the specimens was also observed to be similar. It was concluded that the similarities in mechanical properties were due to the similarities in the silica morphology of the specimens, formed in similar geological environments, as differences in microstructure and trace element distribution were found not to significantly influence the observed bulk mechanical properties.

  12. L-Band RFI in Japan

    Science.gov (United States)

    Soldo, Yan; de Matthaeis, Paolo; Le Vine, David M.

    2016-01-01

    In recent years, three instruments have been launched into orbit with the aim of producing global maps of sea surface salinity and soil moisture using the 1400-1427 MHz band: SMOS, Aquarius and SMAP. Although this frequency band is allocated to passive measurements only, RFI (Radio-Frequency Interference) is present in the data of all three missions. On a global scale, the three sensors have observed approximately the same distribution of RFI. Japan is an important exception that has implications for the design of RFI detection algorithms. RFI in Japan is caused by a large number of emitters belonging to the same system (TV receivers) and for this reason some traditional RFI detection strategies detect little to no RFI over Japan. The study of this case has led to an improvement of the approach to detect RFI in Aquarius data.

  13. Design of an Electronic Chest-Band

    Science.gov (United States)

    Atakan, R.; Acikgoz Tufan, H.; Baskan, H.; Eryuruk, S. H.; Akalin, N.; Kose, H.; Li, Y.; Kursun Bahadir, S.; Kalaoglu, F.

    2017-10-01

    In this study, an electronic chest strap prototype was designed for measuring fitness level, performance optimization, mobility and fall detection. Knitting technology is used for production by using highly elastic nylon yarn. In order to evaluate comfort performance of the garment, yarn strength and elongation, air permeability, moisture management and FAST tests (Fabric Assurance Fabric Testing) were carried out, respectively. After testing of textile part of the chest band, IMU sensors were integrated onto the garment by means of conductive yarns. Electrical conductivity of the circuit was also assessed at the end. Results indicated that the weight and the thickness of the product are relatively high for sports uses and it has a negative impact on comfort properties. However, it is highly stretchable and moisture management properties are still in acceptable values. From the perspective of possible application areas, developed smart chest band in this research could be used in sports facilities as well as health care applications for elderly and disabled people.

  14. X-Band RF Gun Development

    International Nuclear Information System (INIS)

    Vlieks, A.E.

    2012-01-01

    In support of the MEGa-ray program at LLNL and the High Gradient research program at SLAC, a new X-band multi-cell RF gun is being developed. This gun, similar to earlier guns developed at SLAC for Compton X-ray source program, will be a standing wave structure made of 5.5 cells operating in the pi mode with copper cathode. This gun was designed following criteria used to build SLAC X-band high gradient accelerating structures. It is anticipated that this gun will operate with surface electric fields on the cathode of 200 MeV/m with low breakdown rate. RF will be coupled into the structure through a final cell with symmetric duel feeds and with a shape optimized to minimize quadrupole field components. In addition, geometry changes to the original gun, operated with Compton X-ray source, will include a wider RF mode separation, reduced surface electric and magnetic fields.

  15. W-band accelerator study in KEK

    International Nuclear Information System (INIS)

    Zhu Xiongwei; Nakajima, Kazuhisa

    2001-01-01

    In this paper, we summarize the W-band accelerator study in KEK. We present a design study on W-Band photocathode RF gun which is capable of generating and accelerating 300 pC electron bunch. The design system is made up of 91.392 GHz photocathode RF gun and 91.392 GHz traveling wave linac cells. Based on the numerical simulation using SUPERFISH and PARMELA and the conventional RF linac scaling law, the design will produce 300 pC at 1.74 MeV with bunch length 0.72 ps and normalized transverse emittance 0.55 mm mrad. We study the beam dynamics in high frequency and high gradient; due to the high gradient, the pondermotive effect plays an important role in beam dynamics; we found the pondermotive effect still exist with only the fundamental space harmonics (synchrotron mode) due to the coupling of the transverse and longitudinal motion

  16. Band mixing effects in mean field theories

    International Nuclear Information System (INIS)

    Kuyucak, S.; Morrison, I.

    1989-01-01

    The 1/N expansion method, which is an angular momentum projected mean field theory, is used to investigate the nature of electromagnetic transitions in the interacting boson model (IBM). Conversely, comparison with the exact IBM results sheds light on the range of validity of the mean field theory. It is shown that the projected mean field results for the E2 transitions among the ground, β and γ bands are incomplete for the spin dependent terms and it is essential to include band mixing effect for a correct (Mikhailov) analysis of E2 data. The algebraic expressions derived are general and will be useful in the analysis of experimental data in terms of both the sd and sdg boson models. 17 refs., 7 figs., 8 tabs

  17. Band engineering in twisted molybdenum disulfide bilayers

    Science.gov (United States)

    Zhao, Yipeng; Liao, Chengwei; Ouyang, Gang

    2018-05-01

    In order to explore the theoretical relationship between interlayer spacing, interaction and band offset at the atomic level in vertically stacked two-dimensional (2D) van der Waals (vdW) structures, we propose an analytical model to address the evolution of interlayer vdW coupling with random stacking configurations in MoS2 bilayers based on the atomic-bond-relaxation correlation mechanism. We found that interlayer spacing changes substantially with respect to the orientations, and the bandgap increases from 1.53 eV (AB stacking) to 1.68 eV (AA stacking). Our results reveal that the evolution of interlayer vdW coupling originates from the interlayer interaction, leading to interlayer separations and electronic properties changing with stacking configurations. Our predictions constitute a demonstration of twist engineering the band shift in the emergent class of 2D crystals, transition-metal dichalcogenides.

  18. Portable, x-band, linear accelerator systems

    International Nuclear Information System (INIS)

    Schonberg, R.G.; Deruyter, H.; Fowkes, W.R.; Johnson, W.A.; Miller, R.H.; Potter, J.M.; Weaver, J.N.

    1985-01-01

    Three light-weight, x-band, electron accelerators have been developed to provide a series of highly portable sources of x-rays and neutrons for nondestructive testing. The 1.5 MeV x-ray unit has a 200 kW magnetron for an RF source and an air-cooled, traveling wave accelerating structure to minimize its weight. The 4 and 6 MeV units share the same drive system which contains a 1.2 MW magnetron. The 4 MeV unit uses a traveling-wave guide to produce x-rays and the 6MeV unit uses a standing-wave guide to produce x-rays or neutrons. The choice of 9.3 GHz was dictated by the availability of a high power coaxial magnetron and by the obvious dimensional and weight advantages of a higher frequency over the more common S-band frequencies around 3 GHz

  19. Decreasing patient identification band errors by standardizing processes.

    Science.gov (United States)

    Walley, Susan Chu; Berger, Stephanie; Harris, Yolanda; Gallizzi, Gina; Hayes, Leslie

    2013-04-01

    Patient identification (ID) bands are an essential component in patient ID. Quality improvement methodology has been applied as a model to reduce ID band errors although previous studies have not addressed standardization of ID bands. Our specific aim was to decrease ID band errors by 50% in a 12-month period. The Six Sigma DMAIC (define, measure, analyze, improve, and control) quality improvement model was the framework for this study. ID bands at a tertiary care pediatric hospital were audited from January 2011 to January 2012 with continued audits to June 2012 to confirm the new process was in control. After analysis, the major improvement strategy implemented was standardization of styles of ID bands and labels. Additional interventions included educational initiatives regarding the new ID band processes and disseminating institutional and nursing unit data. A total of 4556 ID bands were audited with a preimprovement ID band error average rate of 9.2%. Significant variation in the ID band process was observed, including styles of ID bands. Interventions were focused on standardization of the ID band and labels. The ID band error rate improved to 5.2% in 9 months (95% confidence interval: 2.5-5.5; P error rates. This decrease in ID band error rates was maintained over the subsequent 8 months.

  20. Photon side-bands in mesoscopics

    DEFF Research Database (Denmark)

    Jauho, Antti-Pekka

    1998-01-01

    This paper reviews several applications of photonic side bands, used by Buttiker and Landauer (Phys. Rev. Lett. 49, 1739 (1982)) in their theory of traversal time in tunneling, in transport and optics of mesoscopic systems. Topics include generalizations of the transmission theory of transport...... to time-dependent situations, optics and transport of mesoscopic systems in THz electromagnetic fields, and phase-measurements of photon-assisted tunneling through a quantum dot. (C) 1998 Academic Press Limited....

  1. Identifying chiral bands in real nuclei

    International Nuclear Information System (INIS)

    Shirinda, O.; Lawrie, E.A.

    2012-01-01

    The application of the presently used fingerprints of chiral bands (originally derived for strongly broken chirality) is investigated for real chiral systems. In particular the chiral fingerprints concerning the B(M1) staggering patterns and the energy staggering are studied. It is found that both fingerprints show considerable changes for real chiral systems, a behaviour that creates a significant risk for misinterpretation of the experimental data and can lead to a failure to identify real chiral systems. (orig.)

  2. Large Aperture, Scanning, L-Band SAR

    Science.gov (United States)

    Moussessian, Alina; DelCastillo, Linda; Bach, Vinh; Grando, Maurio; Quijano, Ubaldo; Smith, Phil; Zawadzki, Mark

    2011-01-01

    We have developed the first L-band membrane-based active phased array. The antenna is a 16x16 element patch array with dimensions of 2.3mx2.6m. The array uses membrane-compatible Transmit/Receive (T/R) modules for electronic beam steering. We will discuss the antenna design, the fabrication of this large array, the T/R module development, the signal distribution approach and the measured results of the array

  3. Shifted identical bands: A new phenomenon

    International Nuclear Information System (INIS)

    Jones, E.F.; Lima, A.P. de; Gore, P.M.; Hamilton, J.H.; Ramayya, A.V.; Dodder, R.S.; Kormicki, J.; Hwang, J.K.; Beyer, C.J.; Zhang, X.Q.; Zhu, S.J.; Ter-Akopian, G.M.; Oganessian, Yu.Ts.; Daniel, A.V.; Rasmussen, J.O.; Lee, I.Y.; Cole, J.D.; Drigert, M.W.; Ma, W.-C.

    2001-01-01

    The levels in 162 Gd were identified in spontaneous fission studies. Its transition energies are remarkably similar to those in 160 Gd. From that work, an analysis of yrast bands in even-even proton to neutron-rich Ba to Pb nuclei led to the discovery of a new phenomenon, shifted identical bands (SIB). SIBs are yrast bands in neighboring nuclei (a, b) with moments of inertia which are identical when shifted by a constant amount κ, so J 1a (1 + κ) = J 1b , from 2 + to 8 + and higher to 16 + . Out of over 700 comparisons, 55 SIBs were found from stable to the most neutron-rich Ce-W nuclei with |κ-bar| between 1.5% and 13%, where the spread in κ is less than ± 1%, and only four identical bands (κ-bar congruent with 0). As examples, we found for 158 Sm- 160 Gd, κ-bar (-3.2 +0.1 -0.2 )% (where the ± is the total spread in κ from -3.1 to -3.4); 156 Nd- 160 Gd, (-10.6 +0.4 -0.2 )%; 158 Sm- 160 Sm, (3.4 +0.5 -0.3 )%. The J 1 values were fitted to a variable moment of inertia model with parameters J 0 and C whose values correlate with the SIB J 1 values. The SIBs are not correlated either with deformation or with the N p N n product of the IBA model

  4. Fermion dynamical symmetry and identical bands

    International Nuclear Information System (INIS)

    Guidry, M.

    1994-01-01

    Recent general attention has been directed to the phenomenon of identical bands in both normally deformed and superdeformed nuclei. This paper discusses the possibility that such behavior results from a dynamical symmetry of the nuclear many-body system. Phenomenology and the basic principles of Lie algebras are used to place conditions on the acceptable properties of a candidate symmetry. We find that quite general arguments require that such a symmetry have a minimum of 21 generators with a microscopic fermion interpretation

  5. Broadband S-band class E HPA

    NARCIS (Netherlands)

    Wanum, M.; van Dijk, R.; de Hek, A.P.; van Vliet, Frank Edward

    2009-01-01

    A broadband class E High Power Amplifier (HPA) is presented. This HPA is designed to operate at S-band (2.75 to 3.75 GHz). A power added efficiency of 50% is obtained for the two stage amplifier with an output power of 35.5 dBm on a chip area of 5.25 times 2.8 mm2.

  6. Comparison of eigensolvers for symmetric band matrices.

    Science.gov (United States)

    Moldaschl, Michael; Gansterer, Wilfried N

    2014-09-15

    We compare different algorithms for computing eigenvalues and eigenvectors of a symmetric band matrix across a wide range of synthetic test problems. Of particular interest is a comparison of state-of-the-art tridiagonalization-based methods as implemented in Lapack or Plasma on the one hand, and the block divide-and-conquer (BD&C) algorithm as well as the block twisted factorization (BTF) method on the other hand. The BD&C algorithm does not require tridiagonalization of the original band matrix at all, and the current version of the BTF method tridiagonalizes the original band matrix only for computing the eigenvalues. Avoiding the tridiagonalization process sidesteps the cost of backtransformation of the eigenvectors. Beyond that, we discovered another disadvantage of the backtransformation process for band matrices: In several scenarios, a lot of gradual underflow is observed in the (optional) accumulation of the transformation matrix and in the (obligatory) backtransformation step. According to the IEEE 754 standard for floating-point arithmetic, this implies many operations with subnormal (denormalized) numbers, which causes severe slowdowns compared to the other algorithms without backtransformation of the eigenvectors. We illustrate that in these cases the performance of existing methods from Lapack and Plasma reaches a competitive level only if subnormal numbers are disabled (and thus the IEEE standard is violated). Overall, our performance studies illustrate that if the problem size is large enough relative to the bandwidth, BD&C tends to achieve the highest performance of all methods if the spectrum to be computed is clustered. For test problems with well separated eigenvalues, the BTF method tends to become the fastest algorithm with growing problem size.

  7. Collective oblate bands in Pb nuclei

    Energy Technology Data Exchange (ETDEWEB)

    Huebel, H; Baldsefen, G; Mehta, D [Bonn Univ. (Germany). Inst. fuer Strahlen- und Kernphysik; and others

    1992-08-01

    The coexistence of different nuclear shapes is a well established phenomenon in the Hg-Pb region, where spherical, oblate, prolate and superdeformed prolate shapes have been observed. In this work, the authors report on several new rotational bands in the normally spherical nuclei {sup 199-201}Pb. Similar structures were found previously in the lighter isotopes {sup 197,198}Pb. 11 refs., 1 tab., 3 figs.

  8. ''Identical'' bands in normally-deformed nuclei

    International Nuclear Information System (INIS)

    Garrett, J.D.; Baktash, C.; Yu, C.H.

    1990-01-01

    Gamma-ray transitions energies in neighboring odd- and even-mass nuclei for normally-deformed nuclear configurations are analyzed in a manner similar to recent analyses for superdeformed states. The moment of inertia is shown to depend on pair correlations and the aligned angular momentum of the odd nucleon. The implications of this analysis for ''identical'' super-deformed bands are discussed. 26 refs., 9 figs

  9. Proceedings of wide band gap semiconductors

    International Nuclear Information System (INIS)

    Moustakas, T.D.; Pankove, J.I.; Hamakawa, Y.

    1992-01-01

    This book contains the proceedings of wide band gap semiconductors. Wide band gap semiconductors are under intense study because of their potential applications in photonic devices in the visible and ultraviolet part of the electromagnetic spectrum, and devices for high temperature, high frequency and high power electronics. Additionally, due to their unique mechanical, thermal, optical, chemical, and electronic properties many wide band gap semiconductors are anticipated to find applications in thermoelectric, electrooptic, piezoelectric and acoustooptic devices as well as protective coatings, hard coatings and heat sinks. Material systems covered in this symposium include diamond, II-VI compounds, III-V nitrides, silicon carbide, boron compounds, amorphous and microcrystalline semiconductors, chalcopyrites, oxides and halides. The various papers addressed recent experimental and theoretical developments. They covered issues related to crystal growth (bulk and thin films), structure and microstructure, defects, doping, optoelectronic properties and device applications. A theoretical session was dedicated to identifying common themes in the heteroepitaxy and the role of defects in doping, compensation and phase stability of this unique class of materials. Important experimental milestones included the demonstrations of bright blue injection luminescence at room temperatures from junctions based on III-V nitrides and a similar result from multiple quantum wells in a ZnSe double heterojunction at liquid nitrogen temperatures

  10. Topological magnon bands in ferromagnetic star lattice

    International Nuclear Information System (INIS)

    Owerre, S A

    2017-01-01

    The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1–3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii–Moriya (DM) spin–orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases. (paper)

  11. Topological magnon bands in ferromagnetic star lattice.

    Science.gov (United States)

    Owerre, S A

    2017-05-10

    The experimental observation of topological magnon bands and thermal Hall effect in a kagomé lattice ferromagnet Cu(1-3, bdc) has inspired the search for topological magnon effects in various insulating ferromagnets that lack an inversion center allowing a Dzyaloshinskii-Moriya (DM) spin-orbit interaction. The star lattice (also known as the decorated honeycomb lattice) ferromagnet is an ideal candidate for this purpose because it is a variant of the kagomé lattice with additional links that connect the up-pointing and down-pointing triangles. This gives rise to twice the unit cell of the kagomé lattice, and hence more interesting topological magnon effects. In particular, the triangular bridges on the star lattice can be coupled either ferromagnetically or antiferromagnetically which is not possible on the kagomé lattice ferromagnets. Here, we study DM-induced topological magnon bands, chiral edge modes, and thermal magnon Hall effect on the star lattice ferromagnet in different parameter regimes. The star lattice can also be visualized as the parent material from which topological magnon bands can be realized for the kagomé and honeycomb lattices in some limiting cases.

  12. Surface band structures on Nb(001)

    International Nuclear Information System (INIS)

    Fang, B.; Lo, W.; Chien, T.; Leung, T.C.; Lue, C.Y.; Chan, C.T.; Ho, K.M.

    1994-01-01

    We report the joint studies of experimental and theoretical surface band structures of Nb(001). Angle-resolved photoelectron spectroscopy was used to determine surface-state dispersions along three high-symmetry axes bar Γ bar M, bar Γ bar X, and bar M bar X in the surface Brillouin zone. Ten surface bands have been identified. The experimental data are compared to self-consistent pseudopotential calculations for the 11-layer Nb(001) slabs that are either bulk terminated or fully relaxed (with a 12% contraction for the first interlayer spacing). The band calculations for a 12% surface-contracted slab are in better agreement with the experimental results than those for a bulk-terminated slab, except for a surface resonance near the Fermi level, which is related to the spin-orbit interaction. The charge profiles for all surface states or resonances have been calculated. Surface contraction effects on the charge-density distribution and the energy position of surface states and resonances will also be discussed

  13. Frequency Arrangement For 700 MHz Band

    Directory of Open Access Journals (Sweden)

    Ancans G.

    2015-02-01

    Full Text Available The 694-790 MHz (700 MHz band was allocated by the 2012 World Radiocommunication Conference (WRC-12 in ITU Region 1 (Europe included, to the mobile service on a co-primary basis with other services to which this band was allocated on the primary basis and identified for the International Mobile Telecommunications (IMT. At the same time, the countries of Region 1 will be able also to continue using these frequencies for their broadcasting services if necessary. This allocation will be effective immediately after 2015 World Radiocommunication Conference (WRC-15. In order to make the best possible use of this frequency band for mobile service, a worldwide harmonized frequency arrangement is to be prepared to allow for large economies of scale and international roaming as well as utilizing the available spectrum in the best possible way, minimizing possible interference between services, facilitating deployment and cross-border coordination. The authors analyze different possible frequency arrangements and conclude on the frequency arrangement most suitable for Europe.

  14. Wakefield Band Partitioning in LINAC Structures

    International Nuclear Information System (INIS)

    Jones, Roger M

    2003-01-01

    In the NLC project multiple bunches of electrons and positrons will be accelerated initially to a centre of mass of 500 GeV and later to 1 TeV or more. In the process of accelerating 192 bunches within a pulse train, wakefields are excited which kick the trailing bunches off axis and can cause luminosity dilution and BBU (Beam Break Up). Several structures to damp the wakefield have been designed and tested at SLAC and KEK and these have been found to successfully damp the wakefield [1]. However, these 2π/3 structures suffered from electrical breakdown and this has prompted us to explore lower group velocity structures operating at higher fundamental mode phase advances. The wakefield partitioning amongst the bands has been found to change markedly with increased phase advance. Here we report on general trends in the kick factor and associated wakefield band partitioning in dipole bands as a function of phase advance of the synchronous mode in linacs. These results are applicable to both TW (travelling wave) and SW (standing wave) structures

  15. SHARPENDING OF THE VNIR AND SWIR BANDS OF THE WIDE BAND SPECTRAL IMAGER ONBOARD TIANGONG-II IMAGERY USING THE SELECTED BANDS

    Directory of Open Access Journals (Sweden)

    Q. Liu

    2018-04-01

    Full Text Available The Tiangong-II space lab was launched at the Jiuquan Satellite Launch Center of China on September 15, 2016. The Wide Band Spectral Imager (WBSI onboard the Tiangong-II has 14 visible and near-infrared (VNIR spectral bands covering the range from 403–990 nm and two shortwave infrared (SWIR bands covering the range from 1230–1250 nm and 1628–1652 nm respectively. In this paper the selected bands are proposed which aims at considering the closest spectral similarities between the VNIR with 100 m spatial resolution and SWIR bands with 200 m spatial resolution. The evaluation of Gram-Schmidt transform (GS sharpening techniques embedded in ENVI software is presented based on four types of the different low resolution pan band. The experimental results indicated that the VNIR band with higher CC value with the raw SWIR Band was selected, more texture information was injected the corresponding sharpened SWIR band image, and at that time another sharpened SWIR band image preserve the similar spectral and texture characteristics to the raw SWIR band image.

  16. Spectral band selection for classification of soil organic matter content

    Science.gov (United States)

    Henderson, Tracey L.; Szilagyi, Andrea; Baumgardner, Marion F.; Chen, Chih-Chien Thomas; Landgrebe, David A.

    1989-01-01

    This paper describes the spectral-band-selection (SBS) algorithm of Chen and Landgrebe (1987, 1988, and 1989) and uses the algorithm to classify the organic matter content in the earth's surface soil. The effectiveness of the algorithm was evaluated comparing the results of classification of the soil organic matter using SBS bands with those obtained using Landsat MSS bands and TM bands, showing that the algorithm was successful in finding important spectral bands for classification of organic matter content. Using the calculated bands, the probabilities of correct classification for climate-stratified data were found to range from 0.910 to 0.980.

  17. Retrospective biodosimetry with small tooth enamel samples using K-Band and X-Band

    International Nuclear Information System (INIS)

    Gomez, Jorge A.; Kinoshita, Angela; Leonor, Sergio J.; Belmonte, Gustavo C.; Baffa, Oswaldo

    2011-01-01

    In an attempt to make the in vitro electron spin resonance (ESR) retrospective dosimetry of the tooth enamel a lesser invasive method, experiments using X-Band and K-Band were performed, aiming to determine conditions that could be used in cases of accidental exposures. First, a small prism from the enamel was removed and ground with an agate mortar and pestle until particles reach a diameter of approximately less than 0.5 mm. This enamel extraction process resulted in lower signal artifact compared with the direct enamel extraction performed with a diamond burr abrasion. The manual grinding of the enamel does not lead to any induced ESR signal artifact, whereas the use of a diamond burr at low speed produces a signal artifact equivalent to the dosimetric signal induced by a dose of 500 mGy of gamma irradiation. A mass of 25 mg of enamel was removed from a sound molar tooth previously irradiated in vitro with a dose of 100 mGy. This amount of enamel was enough to detect the dosimetric signal in a standard X-Band spectrometer. However using a K-Band spectrometer, samples mass between 5 and 10 mg were sufficient to obtain the same sensitivity. An overall evaluation of the uncertainties involved in the process in this and other dosimetric assessments performed at our laboratory indicates that it is possible at K-Band to estimate a 100 mGy dose with 25% accuracy. In addition, the use of K-Band also presented higher sensitivity and allowed the use of smaller sample mass in comparison with X-Band. Finally, the restoration process performed on a tooth after extraction of the 25 mg of enamel is described. This was conducted by dental treatment using photopolymerizable resin which enabled complete recovery of the tooth from the functional and aesthetic viewpoint showing that this procedure can be minimally invasive.

  18. Retrospective biodosimetry with small tooth enamel samples using K-Band and X-Band

    Energy Technology Data Exchange (ETDEWEB)

    Gomez, Jorge A. [Departamento de Fisica, FFCLRP, Universidade de Sao Paulo, 14040-901 Ribeirao Preto, Sao Paulo (Brazil); Kinoshita, Angela [Departamento de Fisica, FFCLRP, Universidade de Sao Paulo, 14040-901 Ribeirao Preto, Sao Paulo (Brazil); Universidade Sagrado Coracao - USC, 17011-160 Bauru, Sao Paulo (Brazil); Leonor, Sergio J. [Departamento de Fisica, FFCLRP, Universidade de Sao Paulo, 14040-901 Ribeirao Preto, Sao Paulo (Brazil); Belmonte, Gustavo C. [Universidade Sagrado Coracao - USC, 17011-160 Bauru, Sao Paulo (Brazil); Baffa, Oswaldo, E-mail: baffa@usp.br [Departamento de Fisica, FFCLRP, Universidade de Sao Paulo, 14040-901 Ribeirao Preto, Sao Paulo (Brazil)

    2011-09-15

    In an attempt to make the in vitro electron spin resonance (ESR) retrospective dosimetry of the tooth enamel a lesser invasive method, experiments using X-Band and K-Band were performed, aiming to determine conditions that could be used in cases of accidental exposures. First, a small prism from the enamel was removed and ground with an agate mortar and pestle until particles reach a diameter of approximately less than 0.5 mm. This enamel extraction process resulted in lower signal artifact compared with the direct enamel extraction performed with a diamond burr abrasion. The manual grinding of the enamel does not lead to any induced ESR signal artifact, whereas the use of a diamond burr at low speed produces a signal artifact equivalent to the dosimetric signal induced by a dose of 500 mGy of gamma irradiation. A mass of 25 mg of enamel was removed from a sound molar tooth previously irradiated in vitro with a dose of 100 mGy. This amount of enamel was enough to detect the dosimetric signal in a standard X-Band spectrometer. However using a K-Band spectrometer, samples mass between 5 and 10 mg were sufficient to obtain the same sensitivity. An overall evaluation of the uncertainties involved in the process in this and other dosimetric assessments performed at our laboratory indicates that it is possible at K-Band to estimate a 100 mGy dose with 25% accuracy. In addition, the use of K-Band also presented higher sensitivity and allowed the use of smaller sample mass in comparison with X-Band. Finally, the restoration process performed on a tooth after extraction of the 25 mg of enamel is described. This was conducted by dental treatment using photopolymerizable resin which enabled complete recovery of the tooth from the functional and aesthetic viewpoint showing that this procedure can be minimally invasive.

  19. Generalized seniority scheme for bands in odd-A nuclei

    International Nuclear Information System (INIS)

    Gai, M.; Arima, A.; Strottman, D.

    1980-01-01

    The microscopic generalized seniority scheme is applied for the description of bands in odd-A nuclei. A perturbation expansion in terms of the core-particle interaction is performed. The first-order correction for the band head and the first member of the band is discussed. The specific band structure of a given nucleus, as well as the systematic trend of bands, is described in an explicit N-dependent analytical formula. This formula involves a linear dependence on N which arises from the first-order perturbation expansion. This term is shown responsible for the large deviation of the 11/2 - ΔJ=2 band spacing in I isotopes from the spacing of the Te core. All observed band structures of an odd-A nucleus arise from one simple core-particle coupling. Hence decoupled-E2 bands and strongly coupled ΔJ=1 bands, particle or hole bands of low-spin or high-spin orbits, all follow one simple N-dependence. This uniformity of bands is manifested in E2 bands in 53 I isotopes and deltaJ=1 bands in 51 Sb that have the same 52 Te cores. For the calculations a particle-particle force with a large contribution from a g delta force is used with a coupling constant that is deduced from 210 Pb. 1 figure

  20. Superdeformed bands in 64147Gd83, a possible test of the existence of octupole correlations in superdeformed bands

    International Nuclear Information System (INIS)

    Zuber, K.; Balouka, D.; Beck, F.A.; Byrski, T.; Curien, D.; Duchene, G.; Gehringer, C.; Haas, B.; Merdinger, J.C.; Romain, P.; Santos, D.; Styczen, J.; Vivien, J.P.; Dudek, J.; Szymanski, Z.; Werner, T.

    1990-01-01

    Two discrete superdeformed bands (SD) have been identified in the nucleus 147 Gd. The transitions energies of the SD yrast band lie halfway between the γ-ray energies of the yrast SD band in 146 Gd while the transition energies of the excited band lie half way between the transition energies of the yrast SD band in 148 Gd. These two bands are shown to exhibit the presence of the pseudo SU(3) symmetry and also indicate the possible existence of octupole correlations at large elongations and high spins. (orig.)

  1. Intestinal malrotation and Ladd's bands in a young child | Gaido ...

    African Journals Online (AJOL)

    Intestinal malrotation and Ladd's bands in a young child. ... East African Medical Journal ... potentially more challenging, as it was not the most typical age for duodenal stenosis due to Ladd's bands, which is often mostly observed earlier in life.

  2. Magnetism and magnetostriction in a degenerate rigid band

    International Nuclear Information System (INIS)

    Kulakowski, K.; Barbara, B.

    1990-09-01

    We investigate the influence of the spin-orbit coupling on the magnetic and magnetoelastic phenomena in ferromagnetic band systems. The description is within the Stoner model of a degenerate rigid band, for temperature T = O. (author). 14 refs

  3. Active Multispectral Band Selection and Reflectance Measurement System

    National Research Council Canada - National Science Library

    Rennich, Bradley

    1999-01-01

    .... To aid in the selection of these bands, a novel multispectral band selection technique is presented based on the cross-correlation of the material class reflectance spectra over a wavelength range of 1 - 5 microns...

  4. Assessment of Multipath and Shadowing Effects on UHF Band in ...

    African Journals Online (AJOL)

    Sultan

    bands are used for television broadcasting, mobile cellular systems, Wi-Fi, satellite communications and many others. Effective communication link in the UHF band requires direct line of sight ..... ad-hoc 802.11 wireless LAN (WLAN) devices.

  5. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Science.gov (United States)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-06-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  6. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    International Nuclear Information System (INIS)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

    2015-01-01

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices

  7. Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

    Energy Technology Data Exchange (ETDEWEB)

    Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A. [Integrated Systems Laboratory ETH Zürich, Gloriastrasse 35, 8092 Zürich (Switzerland)

    2015-06-21

    A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the “CVBs interaction” that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

  8. Precipitation Estimation Using L-Band and C-Band Soil Moisture Retrievals

    Science.gov (United States)

    Koster, Randal D.; Brocca, Luca; Crow, Wade T.; Burgin, Mariko S.; De Lannoy, Gabrielle J. M.

    2016-01-01

    An established methodology for estimating precipitation amounts from satellite-based soil moisture retrievals is applied to L-band products from the Soil Moisture Active Passive (SMAP) and Soil Moisture and Ocean Salinity (SMOS) satellite missions and to a C-band product from the Advanced Scatterometer (ASCAT) mission. The precipitation estimates so obtained are evaluated against in situ (gauge-based) precipitation observations from across the globe. The precipitation estimation skill achieved using the L-band SMAP and SMOS data sets is higher than that obtained with the C-band product, as might be expected given that L-band is sensitive to a thicker layer of soil and thereby provides more information on the response of soil moisture to precipitation. The square of the correlation coefficient between the SMAP-based precipitation estimates and the observations (for aggregations to approximately100 km and 5 days) is on average about 0.6 in areas of high rain gauge density. Satellite missions specifically designed to monitor soil moisture thus do provide significant information on precipitation variability, information that could contribute to efforts in global precipitation estimation.

  9. Simultaneous confidence bands for the integrated hazard function

    OpenAIRE

    Dudek, Anna; Gocwin, Maciej; Leskow, Jacek

    2006-01-01

    The construction of the simultaneous confidence bands for the integrated hazard function is considered. The Nelson--Aalen estimator is used. The simultaneous confidence bands based on bootstrap methods are presented. Two methods of construction of such confidence bands are proposed. The weird bootstrap method is used for resampling. Simulations are made to compare the actual coverage probability of the bootstrap and the asymptotic simultaneous confidence bands. It is shown that the equal--tai...

  10. Microscopic description of the three major bands in transitional nuclei

    International Nuclear Information System (INIS)

    Pineda S, R.L.

    1986-01-01

    The author has extended the Coherent Phonon Model to the description of the three major bands in medium heavy transitional nuclei. The model assumes an axially symmetric deformed ground intrinsic state for the description of the low lying yrast levels of the ground band, while the excited bands are generated by intrinsic excitations of the ground band. Good angular momentum states are generated by the Peierls-Yoccoz angular momentum projection method

  11. Identical bands in Ba-Dy, N < 104 space

    International Nuclear Information System (INIS)

    Mittal, H.M.; Vidya Devi; Gupta, J.B.

    2008-01-01

    The recognition of the existence of identical bands, in even-even, odd-even and odd-odd nuclei, in normal deformed bands and superdeformed bands has become the subject of great interest in recent years. Here the search have been taken for such bands for the normal deformed, even-Z, even-N nuclei of Ba and Dy for 82< N<104 major shell space

  12. Vortex excitations and identical superdeformed bands

    Energy Technology Data Exchange (ETDEWEB)

    Waddington, J C; Bhaduri, R K [McMaster Univ., Hamilton, ON (Canada). Dept. of Physics

    1992-08-01

    Striking relationships exist amongst the transition energies of the identical superdeformed bands (SDB). In this paper, the authors suggest that all of these bands in both the mass 150 and mass 190 regions can be explained as excitations of the specially stable doubly closed shell {sup 152}Dy. Typical of these bands is the case of {sup 153}Dy. Two excited SDB`s were observe which not only have a moment of inertia identical to that of {sup 152}Dy, but the transition energies are shifted by exactly {+-}1/4 of a rotational spacing. It is as though the spin 1/2 of the last neutron had been added directly to the angular momentum of the core, but the mass of this last particle had not contributed to the moment of inertia. The possibility is being investigated that the identical SDBs arise from an equivalent picture under the strong rotation of the specially stable {sup 152}Dy. The rotation renders the 3-dimensional space topologically nontrivial. The moment of inertia of {sup 192}Hg extrapolated to zero spin is identical to that of {sup 152}Dy at high spin. This suggests that a superfluid is formed as particles are added to {sup 152}Dy to make {sup 192}Hg. It is proposed that as the rotational frequency of {sup 192}Hg is increased, quantized vortices are formed, like vortices in superfluid {sup 4}He. These vortices lead to an additional alignment in{sup 192}Hg relative to the {sup 152} core, increasing as I{sup 2}, reaching a value of 4{Dirac_h} at I = 48. 3 refs., 3 figs.

  13. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

    International Nuclear Information System (INIS)

    Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2016-01-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

  14. Thermodynamics of many-band superconductors

    International Nuclear Information System (INIS)

    Waelte, A.

    2006-01-01

    In the present thesis the microscopical properties of the superconducting state of MgCNi 3 , MgB 2 , and some rare earth-transition metal borocarbides are studied by means of measurements of the specific heat. Furthermore the frequency spectrum of the lattice vibrations is estimated. The energy gap of the superconducting state can be determined from the specific heat of the superconducting state, which yields as like as the upper critical mafnetic field H c2 (0) hints on the electron-phonon coupling. From the analysis of these results and the comparison with results from transport measurements as well as the tunnel and point-contact spectroscopy can be concluded, how far the BCS model of superconductivity must be modified in order to be able to describe the superconducting state of the studied compounds. Studies on MgCNi 3 , which lies near a magnetic instability, show that occurring magnetic fluctuations have a bisection of the superconducting transition temperature T C as consequence. The under this aspect relatively high value of T C =7 K is a consequence of strong electron-phonon coupling, which is essentailly carried by nickel vibrations stabilized by carbon. A for the first time observed distinct anomaly in the specific heat of the classical many-band superconductor MgB 2 (here with pure 10 B) at about T c /4=10 K can be understood by means of a two-band model for the case of especially weak coupling between both bands. The analysis of the specific heat of the superconducting phase of the non-magnetic rare earth-nickel borocarbide YNi 2 B 2 C and LuNi 2 B 2 C leads to the conclusion thet visible effects of the many-band electron system are dependent on the mass on the position both of the rare earth and the transition metal. The signal of the superconducting phase transformation visible in the specific heat of the antiferromagnetic HoNi 2 B 2 C is smaller than expected

  15. Clear-air lidar dark band

    Science.gov (United States)

    Girolamo, Paolo Di; Scoccione, Andrea; Cacciani, Marco; Summa, Donato; Schween, Jan H.

    2018-04-01

    This paper illustrates measurements carried out by the Raman lidar BASIL in the frame of HOPE, revealing the presence of a clear-air dark band phenomenon (i.e. the appearance of a minimum in lidar backscatter echoes) in the upper portion of the convective boundary layer. The phenomenon is clearly distinguishable in the lidar backscatter echoes at 1064 nm. This phenomenon is attributed to the presence of lignite aerosol particles advected from the surrounding open pit mines in the vicinity of the measuring site.

  16. Fermion dynamical symmetry and identical bands

    International Nuclear Information System (INIS)

    Guidry, M.

    1995-01-01

    Recent general attention has been directed to the phenomenon of identical bands in both normally deformed and superdeformed nuclei. This paper discusses the possibility that such behavior results from a dynamical symmetry of the nuclear many-body system. Phenomenology and the basis principles of Lie algebras are used to place conditions on the acceptable properties of a candidate symmetry. We find that quite general arguments require that such a symmetry have a minimum of 21 generators with a microscopic fermion interpretation. (author). 9 refs., 11 figs., 1 tab

  17. f-band narrowing in uranium intermetallics

    International Nuclear Information System (INIS)

    Dunlap, B.D.; Litterst, F.J.; Malik, S.K.; Kierstead, H.A.; Crabtree, G.W.; Kwok, W.; Lam, D.J.; Mitchell, A.W.

    1987-01-01

    Although the discovery of heavy fermion behavior in uranium compounds has attracted a great deal of attention, relatively little work has been done which is sufficiently systematic to allow an assessment of the relationship of such behavior to more common phenomena, such as mixed valence, narrow-band effects, etc. In this paper we report bulk property measurements for a number of alloys which form a part of such a systematic study. The approach has been to take relatively simple and well-understood materials and alter their behavior by alloying to produce heavy fermion or Kondo behavior in a controlled way

  18. Peristalticity-driven banded chemical garden

    Science.gov (United States)

    Pópity-Tóth, É.; Schuszter, G.; Horváth, D.; Tóth, Á.

    2018-05-01

    Complex structures in nature are often formed by self-assembly. In order to mimic the formation, to enhance the production, or to modify the structures, easy-to-use methods are sought to couple engineering and self-assembly. Chemical-garden-like precipitation reactions are frequently used to study such couplings because of the intrinsic chemical and hydrodynamic interplays. In this work, we present a simple method of applying periodic pressure fluctuations given by a peristaltic pump which can be used to achieve regularly banded precipitate membranes in the copper-phosphate system.

  19. W-Band Sheet Beam Klystron Design

    International Nuclear Information System (INIS)

    Scheitrum, G.; Caryotakis, G.; Burke, A.; Jensen, A.; Jongewaard, E.; Krasnykh, A.; Neubauer, M.; Phillips, R.; Rauenbuehler, K.

    2011-01-01

    Sheet beam devices provide important advantages for very high power, narrow bandwidth RF sources like accelerator klystrons (1). Reduced current density and increased surface area result in increased power capabi1ity, reduced magnetic fields for focusing and reduced cathode loading. These advantages are offset by increased complexity, beam formation and transport issues and potential for mode competition in the ovennoded cavities and drift tube. This paper will describe the design issues encountered in developing a 100 kW peak and 2 kW average power sheet beam k1ystron at W-band including beam formation, beam transport, circuit design, circuit fabrication and mode competition.

  20. Raman band intensities of tellurite glasses.

    Science.gov (United States)

    Plotnichenko, V G; Sokolov, V O; Koltashev, V V; Dianov, E M; Grishin, I A; Churbanov, M F

    2005-05-15

    Raman spectra of TeO2-based glasses doped with WO3, ZnO, GeO2, TiO2, MoO3, and Sb2O3 are measured. The intensity of bands in the Raman spectra of MoO3-TeO2 and MoO3-WO3-TeO2 glasses is shown to be 80-95 times higher than that for silica glass. It is shown that these glasses can be considered as one of the most promising materials for Raman fiber amplifiers.

  1. 77 FR 33098 - Unlicensed Operation in the TV Broadcast Band

    Science.gov (United States)

    2012-06-05

    ...] Unlicensed Operation in the TV Broadcast Band AGENCY: Federal Communications Commission. ACTION: Correcting... matter of ``Unlicensed Operation in the TV Broadcast Band Approval.'' This document contains corrections... of this correction relate to ``Unlicensed Operation in the TV Broadcast Band Approval'' under Sec. 15...

  2. Plasmon band gap generated by intense ion acoustic waves

    International Nuclear Information System (INIS)

    Son, S.; Ku, S.

    2010-01-01

    In the presence of an intense ion acoustic wave, the energy-momentum dispersion relation of plasmons is strongly modified to exhibit a band gap structure. The intensity of an ion acoustic wave might be measured from the band gap width. The plasmon band gap can be used to block the nonlinear cascading channel of the Langmuir wave decay.

  3. Microbial control of Asian longhorned beetles - what are fungal bands?

    Science.gov (United States)

    Ann E. Hajek; Thomas Dubois; Jennifer Lund; Ryan Shanley; Leah Bauer; Michael Smith; Peng Fan; Huang Bo; Hu Jiafu; Zengzhi Li

    2007-01-01

    In Japan, the entomopathogenic fungus Beauveria brongniartii is grown in nonwoven fiber bands that are placed around trunks of orchard trees for control of numerous cerambycid pests, including Anoplophora chinensis (= A. malasiaca). The Japanese company producing bands, Nitto Denko in Osaka, markets bands...

  4. Transistorized wide band pulse amplifier; Amplificateur d'impulsions a large bande et a transistors

    Energy Technology Data Exchange (ETDEWEB)

    Girard, J; Savinelli, H [Commissariat a l' Energie Atomique, Saclay (France).Centre d' Etudes Nucleaires; Hazoni, Y [Atomic Energy Commission (Israel)

    1960-07-01

    A simple wide band amplifier is described below, having a stability better than 1{sup 0}/00 deg{sup -1} centigrade, a current gain of 10{sup 3}, bandwidth of 30 MHz, and a signal to noise current ratio of about 100. This amplifier has been studied to answer the necessity of a fast transistor head amplifier for nuclear detectors, having in mind pile up and overloading problems. (author) [French] Un amplificateur simple, a large bande, est decrit ci-apres, il a une stabilite meilleure que le 0/00 par degre centigrade, un gain en courant de 10{sup 3} une largeur de bande de 30 MHz, et un rapport signal sur bruit en courant d'environ 100. Cet amplificateur a ete etudie pour repondre a la necessite de l'amplification des impulsions provenant de detecteurs nucleaires, ayant a l'esprit les problemes d'empilement et de saturation. (auteur)

  5. Band head spin assignment of superdeformed bands in Hg isotopes through power index formula

    Science.gov (United States)

    Sharma, Honey; Mittal, H. M.

    2018-05-01

    The power index formula has been used to obtain the band head spin (I 0) of all the superdeformed (SD) bands in Hg isotopes. A least squares fitting approach is used. The root mean square deviations between the determined and the observed transition energies are calculated by extracting the model parameters using the power index formula. Whenever definite spins are available, the determined and the observed transition energies are in accordance with each other. The computed values of dynamic moment of inertia J (2) obtained by using the power index formula and its deviation with the rotational frequency is also studied. Excellent agreement is shown between the calculated and the experimental results for J (2) versus the rotational frequency. Hence, the power index formula works very well for all the SD bands in Hg isotopes expect for 195Hg(2, 3, 4).

  6. Systematic study of β-band and correlation with g- band using power law and soft rotor formula

    International Nuclear Information System (INIS)

    Katoch, Vikas; Kaushik, Reetu; Sharma, S.; Gupta, J.B.

    2014-01-01

    The nuclear structure of even Z even N medium mass transitional nuclei consist of ground state band, K π =0 1 β-band, K π =2 1 γ- band and other higher bands. As we move away from closed shell, energy levels are low lying from spherical to deformed nuclei and energy deviated from ideal rotor behavior. The energy of these transitional nuclei in ground band can also be studied using Bohr Mottelson energy expression, Soft Rotor Formula (SRF), Power Law (PL) etc. Recently, Gupta et al. (2013) modified SRF for non zero band head K π =2 1 γ-band and reproduced the level energies. Here same formula applied for K π =0 1 β-band and the level energies are reproduced and compared with experimental energies. The power law is also used for recalculation of level energies and for useful comparison

  7. Ka Band Phase Locked Loop Oscillator Dielectric Resonator Oscillator for Satellite EHF Band Receiver

    Directory of Open Access Journals (Sweden)

    S. Coco

    2008-01-01

    Full Text Available This paper describes the design and fabrication of a Ka Band PLL DRO having a fundamental oscillation frequency of 19.250 GHz, used as local oscillator in the low-noise block of a down converter (LNB for an EHF band receiver. Apposite circuital models have been created to describe the behaviour of the dielectric resonator and of the active component used in the oscillator core. The DRO characterization and measurements have shown very good agreement with simulation results. A good phase noise performance is obtained by using a very high Q dielectric resonator.

  8. Higher superdeformed band members in {sup 190}Hg. Evidence for a band interaction

    Energy Technology Data Exchange (ETDEWEB)

    Bearden, I G; Daly, P J [Purdue Univ., Lafayette, IN (United States); Janssens, V F; Carpenter, M P; Ahmad, I; Khoo, T L; Lauritsen, T; Liang, Y [Argonne National Lab., IL (United States); Drigert, M W [Idaho National Engineering Lab., Idaho Falls, ID (United States); Garg, U; Reviol, W [Notre Dame Univ., IN (United States); Wyss, R [Joint Inst. for Heavy Ion Research, Oak Ridge, TN (United States)

    1992-08-01

    The superdeformed band of {sup 190}Hg has been traced up to a frequency {Dirac_h}{omega} {>=} 0.4 MeV by combining data from several experiments. A distinct change in the slope of the dynamic moment of inertia J{sup (2)} vs {Dirac_h}{omega} is observed at {Dirac_h}{omega} 0.32 MeV. This result is interpreted as evidence for a band interaction at the highest frequencies. Possible interpretations are reviewed. (author) 14 refs., 3 figs.

  9. Symmetries and band gaps in nanoribbons

    Science.gov (United States)

    Zhang, Zhiwei; Tian, Yiteng; Fernando, Gayanath; Kocharian, Armen

    In ideal graphene-like systems, time reversal and sublattice symmetries preserve the degeneracies at the Dirac point(s). We have examined such degeneracies in the band structure as well as the transport properties in various arm-twisted (graphene-related) nanoribbons. A twist angle is defined such that at 0 degrees the ribbon is a rectangular ribbon and at 60 degrees the ribbon is cut from a honeycomb lattice. Using model Hamiltonians and first principles calculations in these nanoribbons with Z2 topology, we have monitored the band structure as a function of the twist angle θ. In twisted ribbons, it turns out that the introduction of an extra hopping term leads to a gap opening. We have also calculated the size and temperature broadening effects in similar ribbons in addition to Rashba-induced transport properties. The authors acknowledge the computing facilities provided by the Center for Functional Nanomaterials, Brookhaven National Laboratory supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No.DE-AC02- 98CH10886.

  10. Changing optical band structure with single photons

    Science.gov (United States)

    Albrecht, Andreas; Caneva, Tommaso; Chang, Darrick E.

    2017-11-01

    Achieving strong interactions between individual photons enables a wide variety of exciting possibilities in quantum information science and many-body physics. Cold atoms interfaced with nanophotonic structures have emerged as a platform to realize novel forms of nonlinear interactions. In particular, when atoms are coupled to a photonic crystal waveguide, long-range atomic interactions can arise that are mediated by localized atom-photon bound states. We theoretically show that in such a system, the absorption of a single photon can change the band structure for a subsequent photon. This occurs because the first photon affects the atoms in the chain in an alternating fashion, thus leading to an effective period doubling of the system and a new optical band structure for the composite atom-nanophotonic system. We demonstrate how this mechanism can be engineered to realize a single-photon switch, where the first incoming photon switches the system from being highly transmissive to highly reflective, and analyze how signatures can be observed via non-classical correlations of the outgoing photon field.

  11. f-electron systems: pushing band theory

    International Nuclear Information System (INIS)

    Koelling, D.D.

    1991-01-01

    The f-electron orbitrals have always been the ''incomplete atomic shells acting as local moments, and weakly interacting with the remaining electronic structure'' in the minds of most people. So examining them using a band theory where one views them as itinerant was once - and to some extent even today still is - considered with some skepticism. Nonetheless, a very significant community has successfully utilized band theory as a probe of the electronic structure of the appropriate actinides and rare earths. Those people actually using the approach would be the first to declare that it is not the whole solution. Instead, one is pushing and even exceeding its limit of applicability. However, the apropriate procedure is to push the model consistently to its limits, patch where possible, and then look to see where discrepancies remain. I propose to offer a selected review of past developments (emphasizing the career to data of A.J. Freeman in this area), offer a list of interesting puzzles for the future, and then make some guesses as to the techniques one might want to use. (orig.)

  12. Optical band gaps of organic semiconductor materials

    Science.gov (United States)

    Costa, José C. S.; Taveira, Ricardo J. S.; Lima, Carlos F. R. A. C.; Mendes, Adélio; Santos, Luís M. N. B. F.

    2016-08-01

    UV-Vis can be used as an easy and forthright technique to accurately estimate the band gap energy of organic π-conjugated materials, widely used as thin films/composites in organic and hybrid electronic devices such as OLEDs, OPVs and OFETs. The electronic and optical properties, including HOMO-LUMO energy gaps of π-conjugated systems were evaluated by UV-Vis spectroscopy in CHCl3 solution for a large number of relevant π-conjugated systems: tris-8-hydroxyquinolinatos (Alq3, Gaq3, Inq3, Al(qNO2)3, Al(qCl)3, Al(qBr)3, In(qNO2)3, In(qCl)3 and In(qBr)3); triphenylamine derivatives (DDP, p-TTP, TPB, TPD, TDAB, m-MTDAB, NPB, α-NPD); oligoacenes (naphthalene, anthracene, tetracene and rubrene); oligothiophenes (α-2T, β-2T, α-3T, β-3T, α-4T and α-5T). Additionally, some electronic properties were also explored by quantum chemical calculations. The experimental UV-Vis data are in accordance with the DFT predictions and indicate that the band gap energies of the OSCs dissolved in CHCl3 solution are consistent with the values presented for thin films.

  13. Spectra of γ rays feeding superdeformed bands

    International Nuclear Information System (INIS)

    Lauritsen, T.; Khoo, T.L.; Henry, R.G.

    1995-01-01

    The spectrum of γrays coincident with SD transitions contains the transitions which populate the SD band. This spectrum can provide information on the feeding mechanism and on the properties (moment of inertia, collectivity) of excited SD states. We used a model we developed to explain the feeding of SD bands, to calculate the spectrum of feeding γrays. The Monte Carlo simulations take into account the trigger conditions present in our Eurogam experiment. Both experimental and theoretical spectra contain a statistical component and a broad E2 peak (from transitions occurring between excited states in the SD well). There is good resemblance between the measured and calculated spectra although the calculated multiplicity of an E2 bump is low by ∼30%. Work is continuing to improve the quality of the fits, which will result in a better understanding of excited SD states. In addition, a model for the last steps, which cool the γ cascade into the SD yrast line, needs to be developed. A strong M1/E2 low-energy component, which we believe is responsible for this cooling, was observed

  14. Study of intruder band in 112Sn

    International Nuclear Information System (INIS)

    Ganguly, S.; Banerjee, P.; Ray, I.; Kshetri, R.; Raut, R.; Bhattacharya, S.; Saha-Sarkar, M.; Goswami, A.; Mukhopadhyay, S.; Mukherjee, A.; Mukherjee, G.; Basu, S.K.

    2007-01-01

    Excited states of the positive-parity intruder band in 112 Sn, populated in the 100 Mo( 20 Ne,α4n) reaction at a beam energy of 136 MeV, have been studied. The band has been observed up to 11570.0 keV with spin (24 + ). Mean lifetimes have been measured for six states up to the 22 + , 10335.1 keV level and an upper limit of the lifetime has been estimated for the 11570.0 keV (24 + ) state. The B(E2) values, derived from the present lifetime results, correspond to a moderate quadrupole deformation of β 2 ∼0.18 for states with spin J π >=12 + , and the decrease in B(E2) for the 14 + ->12 + transition is consistent with a ν(h 11/2 ) 2 alignment at ω∼0.35 MeV, predicted by a cranked shell-model calculation. Total Routhian surface calculations predict a triaxial shape following the alignment

  15. Valence band photoemission studies of clean metals

    International Nuclear Information System (INIS)

    Wehner, P.S.

    1978-04-01

    The application of Angle-Resolved Photoelectron Spectroscopy (ARPES) to crystalline solids and the utilization of such studies to illuminate several questions concerning the detailed electronic structure of such materials, are discussed. Specifically, by construction of a Direct Transition (DT) model and the utilization of energy-dependent angle-resolved normal photoemission in the photon energy range 32 eV < or = hν < or = 200 eV, the bulk band structure of copper is experimentally mapped out along three different directions in the Brillouin Zone; GAMMA to K, GAMMA to L, and GAMMA to X. In addition, various effects which influence the obtainable resolution in vector k-space, namely, thermal disorder, momentum broadening, and band mixing, are discussed and are shown to place severe limitations on the applicability of the DT model. Finally, a model for Angle-Resolved X-ray Photoelectron Spectroscopy (ARXPS) based on the symmetry of the initial-state wavefunctions is presented and compared to experimental results obtained from copper single crystals

  16. Spectra of {gamma} rays feeding superdeformed bands

    Energy Technology Data Exchange (ETDEWEB)

    Lauritsen, T.; Khoo, T.L.; Henry, R.G. [and others

    1995-08-01

    The spectrum of {gamma}rays coincident with SD transitions contains the transitions which populate the SD band. This spectrum can provide information on the feeding mechanism and on the properties (moment of inertia, collectivity) of excited SD states. We used a model we developed to explain the feeding of SD bands, to calculate the spectrum of feeding {gamma}rays. The Monte Carlo simulations take into account the trigger conditions present in our Eurogam experiment. Both experimental and theoretical spectra contain a statistical component and a broad E2 peak (from transitions occurring between excited states in the SD well). There is good resemblance between the measured and calculated spectra although the calculated multiplicity of an E2 bump is low by {approximately}30%. Work is continuing to improve the quality of the fits, which will result in a better understanding of excited SD states. In addition, a model for the last steps, which cool the {gamma} cascade into the SD yrast line, needs to be developed. A strong M1/E2 low-energy component, which we believe is responsible for this cooling, was observed.

  17. Portable, x-band, linear accelerator systems

    International Nuclear Information System (INIS)

    Schonberg, R.G.; Deruyter, H.; Fowkes, W.R.; Johnson, W.A.; Miller, R.H.; Potter, J.M.; Weaver, J.N.

    1985-01-01

    Three light-weight, x-band, electron accelerators have been developed to provide a series of highly portable sources of x-rays and neutrons for non-destructive testing. The 1.5 MeV x-ray unit has a 200 kW magnetron for an RF source and an air-cooled, traveling wave accelerating structure to minimize its weight. The 4 and 6 MeV units share the same drive system which contains a 1.2 MW magnetron. The 4 MeV unit uses a traveling-wave guide to produce x-rays and the 6MeV unit uses a standing-wave guide to produce x-rays or neutrons. The choice of 9.3 GHz was dictated by the availability of a high power coaxial magnetron and by the obvious dimensional and weight advantages of a higher frequency over the more common S-band frequencies around 3 GHz

  18. Warm-Up Activities of Middle and High School Band Directors Participating in State-Level Concert Band Assessments

    Science.gov (United States)

    Ward, Justin P.; Hancock, Carl B.

    2016-01-01

    The purpose of this study was to examine the warm-ups chosen by concert band directors participating in state-level performance assessments. We observed 29 middle and high school bands and coded the frequency and duration of warm-up activities and behaviors. Results indicated that most bands rehearsed music and played scales, long tones, and…

  19. Treatment of Patellar Lower Pole Fracture with Modified Titanium Cable Tension Band Plus Patellar Tibial Tunnel Steel "8" Reduction Band.

    Science.gov (United States)

    Li, Jiaming; Wang, Decheng; He, Zhiliang; Shi, Hao

    2018-01-08

    To determine the efficacy of modified titanium tension band plus patellar tendon tunnel steel 8 "reduction band" versus titanium cable tension band fixation for the treatment of patellar lower pole fracture. 58 patients with lower patella fracture were enrolled in this study, including 30 patients treated with modified titanium cable tension band plus patellar tibial tunnel wire "8" tension band internal fixation (modified group), and 28 patients with titanium cable tension band fixation. All patients were followed up for 9∼15 months with an average of 11.6 months. Knee flexion was significantly improved in the modified group than in the titanium cable tension band group (111.33 ± 13 degrees versus 98.21 ± 21.70 degrees, P = 0.004). The fracture healing time showed no significant difference. At the end of the follow-up, the improvement excellent rate was 93.33% in the modified group, and 82.14% in the titanium cable tension band group. Titanium cable tension band internal fixation loosening was found in 2 cases, including 1 case of treatment by two surgeries without loose internal fixation. The modified titanium cable tension band with "8" tension band fixation showed better efficacy for lower patella fractures than titanium cable tension band fixation.

  20. InfiniBand-Experiences at the Forschungszentrum Karlsruhe

    International Nuclear Information System (INIS)

    Schwickerath, Ulrich; Heiss, Andreas

    2006-01-01

    The Institute for Scientific Computing (IWR) at the Forschungszentrum Karlsruhe has been evaluating the InfiniBand [InfiniBand Trade Association, InfiniBand Architecture Specification, Release 1.0, October 24, 2000] technology since end of the year 2002. The performance of the interconnect has been tested on different platforms and architectures using MPI. Sequential file transfer performance was measured with the RFIO protocol running on native InfiniBand [Ulrich Schwickerath, Andreas Heiss, Nucl. Instr. and Meth. A 534 (2004) 130, http://www.fzk.de/infiniband], and a newly developed InfiniBand-enabled version of the XROOTD

  1. Band structures in fractal grading porous phononic crystals

    Science.gov (United States)

    Wang, Kai; Liu, Ying; Liang, Tianshu; Wang, Bin

    2018-05-01

    In this paper, a new grading porous structure is introduced based on a Sierpinski triangle routine, and wave propagation in this fractal grading porous phononic crystal is investigated. The influences of fractal hierarchy and porosity on the band structures in fractal graidng porous phononic crystals are clarified. Vibration modes of unit cell at absolute band gap edges are given to manifest formation mechanism of absolute band gaps. The results show that absolute band gaps are easy to form in fractal structures comparatively to the normal ones with the same porosity. Structures with higher fractal hierarchies benefit multiple wider absolute band gaps. This work provides useful guidance in design of fractal porous phononic crystals.

  2. The Keenan and Wing bands in S stars

    International Nuclear Information System (INIS)

    Lambert, D.L.; Clegg, R.E.S.

    1980-01-01

    New observations of the near infrared spectra of S stars are presented as part of a survey of the unidentified Keenan and Wing bands. Bandhead wavelengths accurate to 0.5 A are presented. A new band is found at 9014 A. The bands are not present in normal M giants and dwarfs. Laboratory spectroscopy of heavy element oxides is reported. Several new identifications are proposed. The 10 300 A Wing band is identified with the Δv = - 1 sequence of the ZrO 9300 A Δv = 0 bands. The ZrO B 1 PI-A 1 Δ (Δv = 0) system may be responsible for either the 9736 A or the 10 515 A Wing bands. Two new bands in the near infrared at 8219 and 8235 A are provided by CeO. A new band with heads at 7503 and 7509 A in a spectrum of R And is tentatively attributed to YS. A band at 8268 A in M stars is the TiO delta(2-1) head. The 8610 A Keenan band is not due to CrH. Potential carriers of the Keenan and Wing bands are reviewed. It is suggested that the heavy element sulphides and, perhaps, chlorides are leading candidates. Identification of YS in R And may provide the first evidence for these sulphides. ZrS is a leading candidate for which laboratory spectroscopy is needed. (author)

  3. Reduction in pediatric identification band errors: a quality collaborative.

    Science.gov (United States)

    Phillips, Shannon Connor; Saysana, Michele; Worley, Sarah; Hain, Paul D

    2012-06-01

    Accurate and consistent placement of a patient identification (ID) band is used in health care to reduce errors associated with patient misidentification. Multiple safety organizations have devoted time and energy to improving patient ID, but no multicenter improvement collaboratives have shown scalability of previously successful interventions. We hoped to reduce by half the pediatric patient ID band error rate, defined as absent, illegible, or inaccurate ID band, across a quality improvement learning collaborative of hospitals in 1 year. On the basis of a previously successful single-site intervention, we conducted a self-selected 6-site collaborative to reduce ID band errors in heterogeneous pediatric hospital settings. The collaborative had 3 phases: preparatory work and employee survey of current practice and barriers, data collection (ID band failure rate), and intervention driven by data and collaborative learning to accelerate change. The collaborative audited 11377 patients for ID band errors between September 2009 and September 2010. The ID band failure rate decreased from 17% to 4.1% (77% relative reduction). Interventions including education of frontline staff regarding correct ID bands as a safety strategy; a change to softer ID bands, including "luggage tag" type ID bands for some patients; and partnering with families and patients through education were applied at all institutions. Over 13 months, a collaborative of pediatric institutions significantly reduced the ID band failure rate. This quality improvement learning collaborative demonstrates that safety improvements tested in a single institution can be disseminated to improve quality of care across large populations of children.

  4. Thermoelectric band engineering: The role of carrier scattering

    Science.gov (United States)

    Witkoske, Evan; Wang, Xufeng; Lundstrom, Mark; Askarpour, Vahid; Maassen, Jesse

    2017-11-01

    Complex electronic band structures, with multiple valleys or bands at the same or similar energies, can be beneficial for thermoelectric performance, but the advantages can be offset by inter-valley and inter-band scattering. In this paper, we demonstrate how first-principles band structures coupled with recently developed techniques for rigorous simulation of electron-phonon scattering provide the capabilities to realistically assess the benefits and trade-offs associated with these materials. We illustrate the approach using n-type silicon as a model material and show that intervalley scattering is strong. This example shows that the convergence of valleys and bands can improve thermoelectric performance, but the magnitude of the improvement depends sensitively on the relative strengths of intra- and inter-valley electron scattering. Because anisotropy of the band structure also plays an important role, a measure of the benefit of band anisotropy in the presence of strong intervalley scattering is presented.

  5. Formation of Degenerate Band Gaps in Layered Systems

    Directory of Open Access Journals (Sweden)

    Alexey P. Vinogradov

    2012-06-01

    Full Text Available In the review, peculiarities of spectra of one-dimensional photonic crystals made of anisotropic and/or magnetooptic materials are considered. The attention is focused on band gaps of a special type—the so called degenerate band gaps which are degenerate with respect to polarization. Mechanisms of formation and properties of these band gaps are analyzed. Peculiarities of spectra of photonic crystals that arise due to the linkage between band gaps are discussed. Particularly, it is shown that formation of a frozen mode is caused by linkage between Brillouin and degenerate band gaps. Also, existence of the optical Borrmann effect at the boundaries of degenerate band gaps and optical Tamm states at the frequencies of degenerate band gaps are analyzed.

  6. Emission bands of phosphorus and calculation of band structure of rare earth phosphides

    International Nuclear Information System (INIS)

    Al'perovich, G.I.; Gusatinskij, A.N.; Geguzin, I.I.; Blokhin, M.A.; Torbov, V.I.; Chukalin, V.I.; AN SSSR, Moscow. Inst. Novykh Khimicheskikh Problem)

    1977-01-01

    The method of x-ray emission spectroscopy has been used to investigate the electronic structure of monophosphides of rare-earth metals (REM). The fluorescence K bands of phosphorus have been obtained in LaP, PrP, SmP, GdP, TbP, DyP, HoP, ErP, TmP, YbP, and LuP and also the Lsub(2,3) bands of phosphorus in ErP, TmP, YbP, and LuP. Using the Green function technique involving the muffin-tin potential, the energy spectrum for ErP has been calculated in the single-electron approximation. The hystogram of electronic state distribution N(E) is compared with the experimental K and Lsub(2,3) bands of phosphorus in ErP. The agreement between the main details of N(E) and that of x-ray spectra allows to state that the model used provides a good description of the electron density distribution in crystals of REM monophosphides. In accordance with the character of the N(E) distribution the compounds under study are classified as semimetals or semiconductors with a very narrow forbidden band

  7. New results on the superdeformed {sup 196}Pb nucleus: The decay of the excited bands to the yrast band

    Energy Technology Data Exchange (ETDEWEB)

    Bouneau, S.; Azaiez, F.; Duprat, J. [IPN, Orsay (France)] [and others

    1996-12-31

    The study of the superdeformed (SD) {sup 196}Pb nucleus has been revisited using the EUROGAM phase 2 spectrometer. In addition to the known yrast and two lowest excited SD bands, a third excited SD band has been seen. All of the three excited bands were found to decay to the yrast SD band through, presumably, E1 transitions, allowing relative spin and excitation energy assignments. Comparisons with calculations using the random-phase approximation suggest that all three excited bands can be interpreted as octupole vibrational structures.

  8. Collapse and revival in inter-band oscillations of a two-band Bose-Hubbard model

    Energy Technology Data Exchange (ETDEWEB)

    Ploetz, Patrick; Wimberger, Sandro [Institut fuer Theoretische Physik, Universitaet Heidelberg, Philosophenweg 19, 69120 Heidelberg (Germany); Madronero, Javier, E-mail: ploetz@thphys.uni-heidelberg.d [Physik Department, Technische Universitaet Muenchen, James-Franck-Str. 1, 85748 Garching (Germany)

    2010-04-28

    We study the effect of a many-body interaction on inter-band oscillations in a two-band Bose-Hubbard model with an external Stark force. Weak and strong inter-band oscillations are observed, where the latter arise from a resonant coupling of the bands. These oscillations collapse and revive due to a weak two-body interaction between the atoms. Effective models for oscillations in and out of resonance are introduced that provide predictions for the system's behaviour, particularly for the time scales for the collapse and revival of the resonant inter-band oscillations. (fast track communication)

  9. Band structure dynamics in indium wires

    Science.gov (United States)

    Chávez-Cervantes, M.; Krause, R.; Aeschlimann, S.; Gierz, I.

    2018-05-01

    One-dimensional indium wires grown on Si(111) substrates, which are metallic at high temperatures, become insulating below ˜100 K due to the formation of a charge density wave (CDW). The physics of this transition is not conventional and involves a multiband Peierls instability with strong interband coupling. This CDW ground state is readily destroyed with femtosecond laser pulses resulting in a light-induced insulator-to-metal phase transition. The current understanding of this transition remains incomplete, requiring measurements of the transient electronic structure to complement previous investigations of the lattice dynamics. Time- and angle-resolved photoemission spectroscopy with extreme ultraviolet radiation is applied to this end. We find that the transition from the insulating to the metallic band structure occurs within ˜660 fs, which is a fraction of the amplitude mode period. The long lifetime of the transient state (>100 ps) is attributed to trapping in a metastable state in accordance with previous work.

  10. Satellitenbewegung, band III: Natiirliche und gesteuerte bewegung.

    Science.gov (United States)

    Jochim, E. F.

    2014-12-01

    Im dritten Band der Satellitenbewegung werden in fortlaufender Nummerierung einige für Untersuchungen der Bewegung der künstlichen Satelliten wichtige Grundlagen der Astrodynamik mit ausführlichen mathematischen Formelsystemen behandelt. Dazu zählen die unterschiedlichen Aspekte der Bewegung der natürlichen Himmelskörper, die Steuerung und Kontrolle von künstlichen Objekten, und insbesondere die für eine Satellitenbahnanalyse wichtigen physikalischen Beeinflussungen einer Satellitenbewegung. Mathematisch entscheidend ist die Wahl geeigneter Bahnparameter, die ein bestimmtes Bewegungsproblem widerspruchsfrei und singularitätenfrei zu behandeln gestatten. Für die Behandlung routinemäßiger Aufgabenstellungen der Satellitenbewegung, in erster Linie einer präzisen Bahnbestimmung und Bahnverbesserung, kann auf eine Fülle von lehrbuchartigen Monographien verwiesen werden, so dass diese Problematik in der vorliegenden Arbeit nur angedeutet werden soll.

  11. Majorana flat bands in anisotropic systems

    Energy Technology Data Exchange (ETDEWEB)

    Mendler, Daniel; Kotetes, Panagiotis; Schoen, Gerd [Institut fuer theoretische Festkoerperphysik, Karlsruher Institut fuer Technologie (Germany)

    2015-07-01

    It has been recently proposed that topologically protected Majorana flat bands (MFBs) emerge in superconductors with nodal energy spectrum. In this work we introduce a new class of gapful superconductors, in which MFBs can occur due to strong anisotropy. The prototype system exhibiting this kind of behavior is the nematic p{sub x}+p{sub y} spinless superconductor, which supports an edge MFB with controllable bandwidth. Our proposal can be for instance experimentally implemented in topological superconductors engineered from i. semiconductors with tunable spin-orbit coupling or ii. topological insulator surfaces with intrinsic magnetic order in proximity to a conventional SC. By investigating the topological properties of both setups, we show that their unique features render them feasible platforms for manipulating the Majorana fermion bandstructure and realizing MFBs.

  12. Laparoscopic Adjustable Gastric Banding and Hypoglycemia

    Directory of Open Access Journals (Sweden)

    Sigrid Bairdain

    2013-01-01

    Full Text Available Obesity is commonplace, and surgical treatment usually includes Roux-en-Y gastric bypasses (RYGBs. RYGBs have the most documented side effects including vitamin deficiencies, rebound weight gain, and symptomatic hypoglycemia; fewer series exist describing hypoglycemia following other bariatric operations. We reviewed all patients undergoing laparoscopic adjustable gastric banding (LAGB at our institution between 2008 and 2012. Three patients were identified to have symptomatic hypoglycemia following LAGB. Mean time from surgery was 33 months (range 14–45 months, and mean weight loss was 32.7 kg (range 15.9–43.1 kg. None of the patients had preexisting diabetes. Therefore, symptomatic hypoglycemia should be investigated irrespective of bariatric operation.

  13. Two band model for the cuprates

    Science.gov (United States)

    Liu, Shiu; White, Steven

    2009-03-01

    We use a numerical canonical transformation approach to derive an effective two-band model for the hole-doped cuprates, which keeps both oxygen and copper orbitals but removes double occupancy from each. A similar model was considered previously by Frenkel, Gooding, Shraiman, and Siggia (PRB 41, number 1, page 350). We compare the numerically derived model with previously obtained analytical results. In addition to the usual hopping terms between oxygens tpp and Cu-Cu exchange terms Jdd, the model also includes a strong copper-oxygen exchange interaction Jpd and a Kondo-like spin-flip oxygen-oxygen hopping term Kpdp. We use the density matrix renormalization group to study the charge, spin, and pairing properties of the derived model on ladder systems.

  14. High Efficiency Ka-Band Spatial Combiner

    Directory of Open Access Journals (Sweden)

    D. Passi

    2014-12-01

    Full Text Available A Ka-Band, High Efficiency, Small Size Spatial Combiner (SPC is proposed in this paper, which uses an innovatively matched quadruple Fin Lines to microstrip (FLuS transitions. At the date of this paper and at the Author's best knowledge no such FLuS innovative transitions have been reported in literature before. These transitions are inserted into a WR28 waveguide T-junction, in order to allow the integration of 16 Monolithic Microwave Integrated Circuit (MMIC Solid State Power Amplifiers (SSPA's. A computational electromagnetic model using the finite elements method has been implemented. A mean insertion loss of 2 dB is achieved with a return loss better the 10 dB in the 31-37 GHz bandwidth.

  15. Band magnetism due to f-electrons

    International Nuclear Information System (INIS)

    Brodsky, M.B.; Trainor, R.J.

    1976-01-01

    Specific heat data illustrate several types of itinerant or band magnetism in actinide intermetallic compounds. The results show ferromagnetic spin fluctuations in UAl 2 with T/sub sf/ equals 25K, itinerant antiferromagnetism in NpSn 3 with T/sub N/ equals 9.5K and itinerant ferromagnetism in NpOs 2 with T/sub C/ equals 7.9K. Specific heat studies of dilute U/sub 1-x/Th/sub x/Al 2 show the theoretically predicted modifications due to impurity scattering in a spin fluctuation system. For NpSn 3 it is possible to show the BCS nature of the transition due to the gap formation

  16. Theory of Fermi Liquid with Flat Bands

    Science.gov (United States)

    Khodel, V. A.

    2018-04-01

    A self-consistent theory of Fermi systems hosting flat bands is developed. Compared with an original model of fermion condensation, its key point consists in proper accounting for mixing between condensate and non-condensate degrees of freedom that leads to formation of a non-BCS gap Υ (p) in the single-particle spectrum. The results obtained explain: (1) the two-gap structure of spectra of single-particle excitations of electron systems of copper oxides, revealed in ARPES studies, (2) the role of violation of the topological stability of the Landau state in the arrangement of the T-x phase diagram of this family of high-T_c superconductors, (3) the topological nature of a metal-insulator transition, discovered in homogeneous two-dimensional low-density electron liquid of MOSFETs more than 20 years ago.

  17. Design of W-Band photoinjector

    International Nuclear Information System (INIS)

    Zhu, Xiongwei; Nakajima, Kazuhisa

    2000-01-01

    We present a design study on W-Band photocathode RF gun which is capable of generating and accelerating 300 pC electron bunch. The design system is made up of 91.392 GHz photocathode RF gun and 91.392 GHz travelling wave linac cells. Based on the numerical simulation using SUPERFISH and PARMELA and the conventional RF linac scaling law, the design will produce 300 pC at 1.74 MeV with bunch length 0.72 ps and normalized tranverse emittance 0.5 mm mrad. We study the beam dynamics in high frequency and high gradient; due to the high gradient, the pondermotive effect plays an important role in beam dynamics; we found the pondermotive effect still exist with only the fundamental space harmonics (synchrotron mode) due to the coupling of the transverse and longitudinal motion. (author)

  18. The cyanogen band of Comet Halley

    Science.gov (United States)

    Tatum, J. B.; Campbell, E. C.

    The results of improved whole disk solar irradiance spectrum calculations performed for projected Halley's Comet heliocentric radial velocity and distance are provided. The computations were carried out to account for Doppler effects in the Fraunhofer lines of rotational excitation bands of violet CN emissions from the comet in its encounters with solar radiation. The calculations spanned every half-day for 200 days before and after perihelion. The 801 computer images of the expected intensities were photographed in sequence to form an animated film paced by background music from Liszt's Second Hungarian Rhapsody. The results are intended for accounting for spectral changes observed due to Doppler effects induced by changing velocity and distance, rather than physical mechanisms of the emitting processes.

  19. Photonic band gaps of porous solids

    International Nuclear Information System (INIS)

    Biswas, R.; Sigalas, M. M.; Subramania, G.; Soukoulis, C. M.; Ho, K.-M.

    2000-01-01

    Colloidal inverse photonic crystals composed of ordered lattices of air spheres in a high dielectric background are found to have three-dimensional photonic gaps for face-centered cubic, hexgaonal close-packed, and double hexagonal close-packed stacking sequences. Conditions for the occurrence of the complete gap are a sufficient dielectric contrast and a geometry near close packed. Although the lower pseudogaps of these stacking sequences differ, the lowest stop band in the stacking direction is insensitive to the stacking sequence; hence their experimental reflection should be similar. Transmission calculations with structural disorder show the lower pseudogap is relatively unaffected but the higher gap is very difficult to observe with moderate disorder. (c) 2000 The American Physical Society

  20. On the red giant titanium oxide bands

    Science.gov (United States)

    Hanni, L.; Sitska, J.

    1985-12-01

    The dependence of TiO absorption in cool oxygen-sequence giant stars on the Teff and log g of their atmospheres is investigated theoretically on the basis of spectra simulated using the computer program described by Hanni (1983) and the giant model atmospheres of Johnson et al. (1980). The temperature dependence of the intensity jumps at the head of the alpha(1.0) band is determined from simulated spectra, and the jumps are related to spectral types using the calibration of Ridgway et al. (1980). The results are presented in tables and graphs and shown to be in good agreement with the empirical Teff/intensity-jump correlation of Boyarchuk (1969).

  1. Molding of L band niobium superconductor cavity

    Energy Technology Data Exchange (ETDEWEB)

    Inoue, Hitoshi; Funahashi, Yoshisato; Saito, Kenji; Noguchi, Shuichi; Koizumi, Susumu [National Lab. for High Energy Physics, Tsukuba, Ibaraki (Japan)

    1995-07-01

    A cavity to produce high accelerating electron field was developed. The L-band (1.3 GHz) niobium superconductor unit cell cavity was ellipsoid with {phi}217.3 mm outer diameter and 2.5 mm thickness and consisted of two pieces of half cell, two beam pipes and flange. A deep drawing process was adapted. In spite of the first trial manufacture, each good cavity was obtained. Characteristic properties of niobium materials, molding method of cavity, extension of sheet after molding, production of beam pipe, accuracy and the cost were explained. Niobium materials. showed tensile strength 15.6 kg/mm{sup 2}, load-carrying capacity 4.1 kg/mm{sup 2}, density 8.57, extension 42.5% and RRR (resistance residual ratio){>=}200. (S.Y.)

  2. Hazard banding in compliance with the new Globally Harmonised System (GHS) for use in control banding tools.

    Science.gov (United States)

    Arnone, Mario; Koppisch, Dorothea; Smola, Thomas; Gabriel, Stefan; Verbist, Koen; Visser, Remco

    2015-10-01

    Many control banding tools use hazard banding in risk assessments for the occupational handling of hazardous substances. The outcome of these assessments can be combined with advice for the required risk management measures (RMMs). The Globally Harmonised System of Classification and Labelling of Chemicals (GHS) has resulted in a change in the hazard communication elements, i.e. Hazard (H) statements instead of Risk-phrases. Hazard banding schemes that depend on the old form of safety information have to be adapted to the new rules. The purpose of this publication is to outline the rationales for the assignment of hazard bands to H statements under the GHS. Based on this, this publication proposes a hazard banding scheme that uses the information from the safety data sheets as the basis for assignment. The assignment of hazard bands tiered according to the severity of the underlying hazards supports the important principle of substitution. Additionally, the set of assignment rules permits an exposure-route-specific assignment of hazard bands, which is necessary for the proposed route-specific RMMs. Ideally, all control banding tools should apply the same assignment rules. This GHS-compliant hazard banding scheme can hopefully help to establish a unified hazard banding strategy in the various control banding tools. Copyright © 2015 Elsevier Inc. All rights reserved.

  3. Electronic band structures of binary skutterudites

    International Nuclear Information System (INIS)

    Khan, Banaras; Aliabad, H.A. Rahnamaye; Saifullah; Jalali-Asadabadi, S.; Khan, Imad; Ahmad, Iftikhar

    2015-01-01

    The electronic properties of complex binary skutterudites, MX 3 (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures

  4. Outcome of band ligation in oesophageal varices

    International Nuclear Information System (INIS)

    Abbasi, A.; Bhutto, A.R.; Bhatti, K.I.; Mahmood, K.; Lal, K.

    2013-01-01

    Objective: To find out the outcome og band ligation of oesophageal varices in decompensated chronic liver disease patients. Methods: The quasi experimental study was conducted at the Jinnah Postgraduate Medical Centre, Karachi, and Civil Hospital, Karachi, unit from September 2007 to August 2011. Subjects were eligible if they had a diagnosis of cirrhosis based on history, physical examination, biochemical parameters and liver biopsy in some cases. Patients with advanced cirrhosis (Child-Pugh class C), antibodies against human immunodeficiency virus, hepatocellular carcinoma, portal vein thrombosis evident on ultrasonography, parenteral drug addiction, current alcohol abuse, previous or current treatment with β-blockers were excluded from the study. All patients were asked about alcohol intake and tested to determine the cause of liver cirrhosis. Tests for other causes of cirrhosis were carried out only if there was a suggestive clue. All patients under-went upper gastrointestinal endoscopy after consent. SPSS 15 was used for statistical analysis. Results: The age of the 173 patients who met the inclusion criteria ranged from 15 to 85 years, with a mean of 48.39+-13.38 years. There were 112 (64.7%) males. High-grade varices were seen in 130 (75.1%) patients, while low-grade varices were observed in 43 (24.9%) on first endoscopy. At initial endoscopy, 111 (64.2%) patients had portal hypertensive gastropathy. The patients were followed up for a mean period of 5.20+-2.67 months. Variceal obliteration was achieved in 138 (79.8%), while 33 (19.1%) cases developed re-bleeding. Mean number of endoscopy sessions for these patients were 2.28+-.918 with a maximum of 4. Conclusion: Band ligation eradicated oesophageal varices with less complications and a lower re-bleeding rate, but at the same time eradication was associated with more frequent development of portal hypertensive gastropathy. (author)

  5. Electronic band structures of binary skutterudites

    Energy Technology Data Exchange (ETDEWEB)

    Khan, Banaras [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Aliabad, H.A. Rahnamaye [Department of Physics, Hakim Sabzevari University, Sabzevar (Iran, Islamic Republic of); Saifullah [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Jalali-Asadabadi, S. [Department of Physics, Faculty of Science, University of Isfahan (UI), 81744 Isfahan (Iran, Islamic Republic of); Khan, Imad [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan); Ahmad, Iftikhar, E-mail: ahma5532@gmail.com [Center for Computational Materials Science, University of Malakand, Chakdara (Pakistan); Department of Physics, University of Malakand, Chakdara (Pakistan)

    2015-10-25

    The electronic properties of complex binary skutterudites, MX{sub 3} (M = Co, Rh, Ir; X = P, As, Sb) are explored, using various density functional theory (DFT) based theoretical approaches including Green's Function (GW) as well as regular and non-regular Tran Blaha modified Becke Jhonson (TB-mBJ) methods. The wide range of calculated bandgap values for each compound of this skutterudites family confirm that they are theoretically as challenging as their experimental studies. The computationally expensive GW method, which is generally assume to be efficient in the reproduction of the experimental bandgaps, is also not very successful in the calculation of bandgaps. In this article, the issue of the theoretical bandgaps of these compounds is resolved by reproducing the accurate experimental bandgaps, using the recently developed non-regular TB-mBJ approach, based on DFT. The effectiveness of this technique is due to the fact that a large volume of the binary skutterudite crystal is empty and hence quite large proportion of electrons lie outside of the atomic spheres, where unlike LDA and GGA which are poor in the treatment of these electrons, this technique properly treats these electrons and hence reproduces the clear electronic picture of these compounds. - Highlights: • Theoretical and experimental electronic band structures of binary skutterudites are reviewed. • The literature reveals that none of the existing theoretical results are consistent with the experiments. • GW, regular and non-regular TB-mBJ methods are used to reproduce the correct results. • The GW and regular TB-mBJ results are better than the available results in literature. • However, non-regular TB-mBJ reproduces the correct experimental band structures.

  6. Change in optimum genetic algorithm solution with changing band discontinuities and band widths of electrically conducting copolymers

    Science.gov (United States)

    Kaur, Avneet; Bakhshi, A. K.

    2010-04-01

    The interest in copolymers stems from the fact that they present interesting electronic and optical properties leading to a variety of technological applications. In order to get a suitable copolymer for a specific application, genetic algorithm (GA) along with negative factor counting (NFC) method has recently been used. In this paper, we study the effect of change in the ratio of conduction band discontinuity to valence band discontinuity (Δ Ec/Δ Ev) on the optimum solution obtained from GA for model binary copolymers. The effect of varying bandwidths on the optimum GA solution is also investigated. The obtained results show that the optimum solution changes with varying parameters like band discontinuity and band width of constituent homopolymers. As the ratio Δ Ec/Δ Ev increases, band gap of optimum solution decreases. With increasing band widths of constituent homopolymers, the optimum solution tends to be dependent on the component with higher band gap.

  7. New Kronig-Penney equation emphasizing the band edge conditions

    International Nuclear Information System (INIS)

    Szmulowicz, Frank

    2008-01-01

    The Kronig-Penney problem is a textbook example for discussing band dispersions and band gap formation in periodic layered media. For example, in photonic crystals, the behaviour of bands next to the band edges is important for further discussions of such effects as inhibited light emission, slow light and negative index of refraction. However, the standard Kronig-Penney equation does not explicitly state the band edge conditions. This paper derives a new solution for the Kronig-Penney problem that explicitly displays the band edge conditions as well as contains all other essential physics of band formation. Therefore, the present exposition should show the student that the band edge conditions are not simply special cases of the familiar Kronig-Penney equation but, instead, are an integral part of the band theory. For the computationally minded student, the new equation is particularly convenient for calculating the positions of closely spaced band edges. The present results can be taught alongside the Kronig-Penney equation in advanced undergraduate or beginning graduate quantum mechanics, solid state theory and photonics courses dealing with wave propagation through periodic layered media

  8. Deformation potentials for band-to-band tunneling in silicon and germanium from first principles

    Science.gov (United States)

    Vandenberghe, William G.; Fischetti, Massimo V.

    2015-01-01

    The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: DTA = 4.1 × 108 eV/cm, DTO = 1.2 × 109 eV/cm, and DLO = 2.2 × 109 eV/cm for BTBT in silicon and DTA = 7.8 × 108 eV/cm and DLO = 1.3 × 109 eV/cm for BTBT in germanium. These values agree with experimentally measured values and we explain why in diodes, the TA/TO phonon-assisted BTBT dominates over LO phonon-assisted BTBT despite the larger deformation potential for the latter. We also explain why LO phonon-assisted BTBT can nevertheless dominate in many practical applications.

  9. Notes on basis band-pass circuits; Notes sur les circuits de base passe-bande

    Energy Technology Data Exchange (ETDEWEB)

    Ailloud, J [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1959-07-01

    Resistor load amplifier stages, basic band-pass RC networks, conventional single-tuned circuits, have the same transfer function. Common properties and differences because diverse magnitude of parameters with proposed problems are exposed. Next the case of several cascaded stages (or networks) is examined when there is no reaction ones to another. (author) [French] Les etages amplificateurs a resistances, les circuits passe-bande RC elementaires, le circuit resonnant classique possedent la meme fonction de transfert. On fait ressortir les proprietes communes et les differences de comportement dues aux ordres de grandeur qu'il est possible de donner aux parametres en fonction des problemes a resoudre. On examine ensuite le cas de plusieurs etages (ou de plusieurs circuits) en cascade lorsqu'ils ne reagissent pas les uns sur les autres. (auteur)

  10. Review of wide band-gap semiconductors technology

    Directory of Open Access Journals (Sweden)

    Jin Haiwei

    2016-01-01

    Full Text Available Silicon carbide (SiC and gallium nitride (GaN are typical representative of the wide band-gap semiconductor material, which is also known as third-generation semiconductor materials. Compared with the conventional semiconductor silicon (Si or gallium arsenide (GaAs, wide band-gap semiconductor has the wide band gap, high saturated drift velocity, high critical breakdown field and other advantages; it is a highly desirable semiconductor material applied under the case of high-power, high-temperature, high-frequency, anti-radiation environment. These advantages of wide band-gap devices make them a hot spot of semiconductor technology research in various countries. This article describes the research agenda of United States and European in this area, focusing on the recent developments of the wide band-gap technology in the US and Europe, summed up the facing challenge of the wide band-gap technology.

  11. Search for positive parity bands in 117Xe

    International Nuclear Information System (INIS)

    Liu, Z.; Sun, X.; Zhou, X.; Lei, X.; Zhang, Y.; Jin, H.; Pan, Q.; Guo, Y.; Chen, X.; Luo, Y.; Wen, S.; Yuan, G.; Yang, C.; Luo, W.; Chen, Y.S.; Xing, Z.; Chen, X.Q.

    1995-01-01

    Excited states of 117 Xe were populated via the reaction 28 Si+ 92 Mo at 100-120MeV. More than 40 new γ-transitions and three new positive parity bands have been observed by means of in-beam γ-ray spectroscopy. The previously known νh 11/2 bands were confirmed, and the νg 7/2 favored band was extended up to 47/2 + in which two bandcrossings have been observed at hω=0.33 and 0.44MeV, respectively. The band structures have been discussed by means of TRS and CSM calculations. A newly observed rotational band consisting of five γ-transitions has been considered as the πh 11/2 band of 117 Cs. ((orig.))

  12. Band Structure Characteristics of Nacreous Composite Materials with Various Defects

    Science.gov (United States)

    Yin, J.; Zhang, S.; Zhang, H. W.; Chen, B. S.

    2016-06-01

    Nacreous composite materials have excellent mechanical properties, such as high strength, high toughness, and wide phononic band gap. In order to research band structure characteristics of nacreous composite materials with various defects, supercell models with the Brick-and-Mortar microstructure are considered. An efficient multi-level substructure algorithm is employed to discuss the band structure. Furthermore, two common systems with point and line defects and varied material parameters are discussed. In addition, band structures concerning straight and deflected crack defects are calculated by changing the shear modulus of the mortar. Finally, the sensitivity of band structures to the random material distribution is presented by considering different volume ratios of the brick. The results reveal that the first band gap of a nacreous composite material is insensitive to defects under certain conditions. It will be of great value to the design and synthesis of new nacreous composite materials for better dynamic properties.

  13. Lifetimes of an excited superdeformed band in {sup 192}Hg

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, I.; Blumenthal, D.; Carpenter, M.P. [and others

    1995-08-01

    An excited superdeformed band was identified in {sup 192}Hg and the lifetimes of its levels measured with the Doppler-shift attenuation method from data taken with the Eurogam spectrometer. The band is proposed to be based on the two-quasineutron (v[642]3/2 [512]5/2) configuration, which after a band crossing, becomes the (v[642]3/2 [752]5/2) configuration. The transition quadrupole moment Q{sub t} of the excited band is the same as that of the yrast SD band, within experimental errors. This suggests that the deformation of the SD minimum is robust with respect to quasiparticle excitation, despite the occupation of the deformation-driving v[752]5/2 level (from the j{sub 15/2} shell) after the band crossing.

  14. Enhancement of phononic band gaps in ternary/binary structure

    International Nuclear Information System (INIS)

    Aly, Arafa H.; Mehaney, Ahmed

    2012-01-01

    Based on the transfer matrix method (TMM) and Bloch theory, the interaction of elastic waves (normal incidence) with 1D phononic crystal had been studied. The transfer matrix method was obtained for both longitudinal and transverse waves by applying the continuity conditions between the consecutive unit cells. Dispersion relations are calculated and plotted for both binary and ternary structures. Also we have investigated the corresponding effects on the band gaps values for the two types of phononic crystals. Furthermore, it can be observed that the complete band gaps are located in the common frequency stop-band regions. Numerical simulations are performed to investigate the effect of different thickness ratios inside each unit cell on the band gap values, as well as unit cells thickness on the central band gap frequency. These phononic band gap materials can be used as a filter for elastic waves at different frequencies values.

  15. A Compact Printed Quadruple Band-Notched UWB Antenna

    Directory of Open Access Journals (Sweden)

    Xiaoyin Li

    2013-01-01

    Full Text Available A novel compact coplanar waveguide- (CPW- fed ultrawideband (UWB printed planar volcano-smoke antenna (PVSA with four band-notches for various wireless applications is proposed and demonstrated. The low-profile antenna consists of a C-shaped parasitic strip to generate a notched band at 8.01~8.55 GHz for the ITU band, two C-shaped slots, and an inverted U-shaped slot etched in the radiator patch to create three notched bands at 5.15~5.35 GHz, 5.75~5.85 GHz, and 7.25~7.75 GHz for filtering the WLAN and X-band satellite signals. Simulated and measured results both confirm that the proposed antenna has a broad bandwidth of 3.1~12 GHz with VSWR < 2 and good omnidirectional radiation patterns with four notched-bands.

  16. High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

    Science.gov (United States)

    Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

    2018-01-01

    Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

  17. A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology

    Science.gov (United States)

    Ishii, Yuichiro; Tanaka, Miki; Yabuuchi, Makoto; Sawada, Yohei; Tanaka, Shinji; Nii, Koji; Lu, Tien Yu; Huang, Chun Hsien; Sian Chen, Shou; Tse Kuo, Yu; Lung, Ching Cheng; Cheng, Osbert

    2018-04-01

    We propose a highly symmetrical 10 transistor (10T) 2-read/write (2RW) dual-port (DP) static random access memory (SRAM) bitcell in 28 nm high-k/metal-gate (HKMG) planar bulk CMOS. It replaces the conventional 8T 2RW DP SRAM bitcell without any area overhead. It significantly improves the robustness of process variations and an asymmetric issue between the true and bar bitline pairs. Measured data show that read current (I read) and read static noise margin (SNM) are respectively boosted by +20% and +15 mV by introducing the proposed bitcell with enlarged pull-down (PD) and pass-gate (PG) N-channel MOSs (NMOSs). The minimum operating voltage (V min) of the proposed 256 kbit 10T DP SRAM is 0.53 V in the TT process, 25 °C under the worst access condition with read/write disturbances, and improved by 90 mV (15%) compared with the conventional one.

  18. Banding the World Together; The Global Growth of Control Banding and Qualitative Occupational Risk Management

    OpenAIRE

    Zalk, David M; Heussen, Ga Henri

    2011-01-01

    Control Banding (CB) strategies to prevent work-related illness and injury for 2.5 billion workers without access to health and safety professionals has grown exponentially this last decade. CB originates from the pharmaceutical industry to control active pharmaceutical ingredients without a complete toxicological basis and therefore no occupational exposure limits. CB applications have broadened into chemicals in general - including new emerging risks like nanomaterials and recently into erg...

  19. Panchromatic cooperative hyperspectral adaptive wide band deletion repair method

    Science.gov (United States)

    Jiang, Bitao; Shi, Chunyu

    2018-02-01

    In the hyperspectral data, the phenomenon of stripe deletion often occurs, which seriously affects the efficiency and accuracy of data analysis and application. Narrow band deletion can be directly repaired by interpolation, and this method is not ideal for wide band deletion repair. In this paper, an adaptive spectral wide band missing restoration method based on panchromatic information is proposed, and the effectiveness of the algorithm is verified by experiments.

  20. Observations of banding in first-year Arctic sea ice

    Science.gov (United States)

    Cole, David M.; Eicken, Hajo; Frey, Karoline; Shapiro, Lewis H.

    2004-08-01

    Horizontal banding features, alternating dark and bright horizontal bands apparent in ice cores and stratigraphic cross sections have long been observed in first-year sea ice and are frequently associated with bands of high and low brine or gas porosity. Observations on the land-fast ice near Barrow, Alaska, in recent years have revealed particularly striking banding patterns and prompted a study of their macroscopic and microscopic characteristics. The banding patterns are quantified from photographs of full-depth sections of the ice, and examples are presented from the Chukchi Sea and Elson Lagoon. Statistics on band spacing are presented, and the growth records for three seasons are employed to estimate their time of formation. These data provide insight into the periodicity of the underlying phenomena. Micrographs are used to examine the microstructural variations associated with various banding features and to quantify the geometry of the constituent brine inclusions associated with high- and low-porosity bands. The micrography revealed that the area fraction of brine inclusions varied by a factor of nearly 3 through the more pronounced high- and low-porosity bands. Vertical micrographs obtained shortly after the materials' removal from the ice sheet showed that significantly larger inclusions form abruptly at the start of the high-porosity bands and frequently terminate abruptly at the end of the band. Crystallographic observations indicated that the high-porosity bands supported the nucleation and growth of crystals having substantially different orientations from the very well aligned columnar structure that characterized the bulk of the sheet.

  1. Surface Resonance Bands on (001)W: Experimental Dispersion Relations

    DEFF Research Database (Denmark)

    Willis, R. F.; Feuerbacher, B.; Christensen, N. Egede

    1977-01-01

    A band of unbound surface states (resonances), located in an energy region above the vacuum threshold corresponding to an energy band gap in the electron states of the bulk crystal, has been observed by angle-resolved secondary-electron-emission spectroscopy. The experimental dispersion behavior...... is in agreement with the two-dimensional band structure of a clean (001)W surface recently proposed by Smith and Mittheiss....

  2. Identical gamma-vibrational bands in {sup 165}Ho

    Energy Technology Data Exchange (ETDEWEB)

    Radford, D.C.; Galindo-Uribarri, A.; Janzen, V.P. [Chalk River Labs., Ontario (Canada)] [and others

    1996-12-31

    The structure of {sup 165}Ho at moderate spins has been investigated by means of Coulomb excitation. Two {gamma}-vibrational bands (K{sup {pi}} = 11/2{sup {minus}} and K{sup {pi}} = 3/2{sup {minus}}) are observed, with very nearly identical in-band {gamma}-ray energies. Gamma-ray branching ratios are analyzed to extract information on Coriolis mixing, and the role of the K quantum number in identical bands is discussed.

  3. Micromachined millimeter-wave photonic band-gap crystals

    International Nuclear Information System (INIS)

    Oezbay, E.; Michel, E.; Tuttle, G.; Biswas, R.; Sigalas, M.; Ho, K.

    1994-01-01

    We have developed a new technique for fabricating three-dimensional photonic band-gap crystals. Our method utilizes an orderly stacking of micromachined (110) silicon wafers to build the periodic structure. A structure with a full three-dimensional photonic band gap centered near 100 GHz was measured, with experimental results in good agreement with theoretical predictions. This basic approach described should be extendable to build structures with photonic band-gap frequencies ranging from 30 GHz to 3 THz

  4. X-band RF power sources for accelerator applications

    International Nuclear Information System (INIS)

    Kirshner, Mark F.; Kowalczyk, Richard D.; Wilsen, Craig B.; True, Richard B.; Simpson, Ian T.; Wray, John T.

    2011-01-01

    The majority of medical and industrial linear accelerators (LINACs) in use today operate at S-band. To reduce size and weight, these systems are gradually migrating toward X-band. The new LINACs will require suitable RF components to power them. In anticipation of this market, L-3 Communications Electron Devices Division (EDD) has recently developed a suite of RF sources operating at 9.3 GHz to complement our existing S-band product line. (author)

  5. Gastropericardial Fistula as a Late Complication of Laparoscopic Gastric Banding

    Directory of Open Access Journals (Sweden)

    Adam A Rudd

    2017-01-01

    Full Text Available Laparoscopic adjustable gastric banding (LAGB is a bariatric procedure that is being performed with increasing frequency as an alternative management option for morbid obesity. Several common complications have been reported including gastric band slippage and associated pouch dilatation, intragastric erosion of the band, gastric wall perforation, and abscess formation. We present a case of gastropericardial fistula occurring nine years after an LAGB. There have been no previous documented cases of the complication after this procedure.

  6. Left regular bands of groups of left quotients

    International Nuclear Information System (INIS)

    El-Qallali, A.

    1988-10-01

    A semigroup S which has a left regular band of groups as a semigroup of left quotients is shown to be the semigroup which is a left regular band of right reversible cancellative semigroups. An alternative characterization is provided by using spinned products. These results are applied to the case where S is a superabundant whose set of idempotents forms a left normal band. (author). 13 refs

  7. Deep-Space Ka-Band Flight Experience

    Science.gov (United States)

    Morabito, D. D.

    2017-11-01

    Lower frequency bands have become more congested in allocated bandwidth as there is increased competition between flight projects and other entities. Going to higher frequency bands offers significantly more bandwidth, allowing for the use of much higher data rates. However, Ka-band is more susceptible to weather effects than lower frequency bands currently used for most standard downlink telemetry operations. Future or prospective flight projects considering deep-space Ka-band (32-GHz) telemetry data links have expressed an interest in understanding past flight experience with received Ka-band downlink performance. Especially important to these flight projects is gaining a better understanding of weather effects from the experience of current or past missions that operated Ka-band radio systems. We will discuss the historical flight experience of several Ka-band missions starting from Mars Observer in 1993 up to present-day deep-space missions such as Kepler. The study of historical Ka-band flight experience allows one to recommend margin policy for future missions. Of particular interest, we will review previously reported-on flight experience with the Cassini spacecraft Ka-band radio system that has been used for radio science investigations as well as engineering studies from 2004 to 2015, when Cassini was in orbit around the planet Saturn. In this article, we will focus primarily on the Kepler spacecraft Ka-band link, which has been used for operational telemetry downlink from an Earth trailing orbit where the spacecraft resides. We analyzed the received Ka-band signal level data in order to characterize link performance over a wide range of weather conditions and as a function of elevation angle. Based on this analysis of Kepler and Cassini flight data, we found that a 4-dB margin with respect to adverse conditions ensures that we achieve at least a 95 percent data return.

  8. Analytically derived conversion of spectral band radiance to brightness temperature

    Energy Technology Data Exchange (ETDEWEB)

    Berk, Alexander [Spectral Sciences, Inc., 44th Avenue, Burlington, MA 01803 (United States)], E-mail: lex@spectral.com

    2008-05-15

    Simple analytic expressions for brightness temperature have been derived in terms of band response function spectral moments. Accuracy measures are also derived. Application of these formulas to GOES-12 Sounder thermal infrared bands produces brightness temperature residuals between -5.0 and 2.5 mK for a 150-400 K temperature range. The magnitude of residuals for the five ASTER Radiometer thermal infrared bands over the same temperature range is less than 0.22 mK.

  9. Gastric band tubing-related complication during pregnancy.

    Science.gov (United States)

    Ongso, Yuni F; Beh, Han N

    2017-11-01

    In the past few decades, laparoscopic adjustable gastric banding is one of the most common bariatric procedures performed to treat morbid obesity. Device-related complication such as connection-tubing problem is rare. Here we present a case of gastric band tubing complication during pregnancy. This case illustrates the need to maintain high index of suspicion of gastric band device-related complication during pregnancy and early referral for bariatric surgical assessment is recommended.

  10. Development of a Control Banding Tool for Nanomaterials

    OpenAIRE

    Riediker, M.; Ostiguy, C.; Triolet, J.; Troisfontaine, P.; Vernez, D.; Bourdel, G.; Thieriet, N.; Cadène, A.

    2012-01-01

    Control banding (CB) can be a useful tool for managing the potential risks of nanomaterials. The here proposed CB, which should be part of an overall risk control strategy, groups materials by hazard and emission potential. The resulting decision matrix proposes control bands adapted to the risk potential levels and helps define an action plan. If this plan is not practical and financially feasible, a full risk assessment is launched. The hazard banding combines key concepts of nanomaterial t...

  11. The Marvels of Electromagnetic Band Gap (EBG) Structures

    Science.gov (United States)

    2003-11-01

    terminology of "Electromagnetic conference papers and journal articles dealing with Band- gaps (EBG)". Recently, many researchers the characterizations...Band Gap (EBG) Structures 9 utilized to reduce the mutual coupling between Structures: An FDTD/Prony Technique elements of antenna arrays. based on the...Band- Gap of several patents. He has had pioneering research contributions in diverse areas of electromagnetics,Snteructure", Dymposiget o l 21 IE 48

  12. Design of an S band narrow-band bandpass BAW filter

    Science.gov (United States)

    Gao, Yang; Zhao, Kun-li; Han, Chao

    2017-11-01

    An S band narrowband bandpass filter BAW with center frequency 2.460 GHz, bandwidth 41MHz, band insertion loss - 1.154 dB, the passband ripple 0.9 dB, the out of band rejection about -42.5dB@2.385 GHz; -45.5dB@2.506 GHz was designed for potential UAV measurement and control applications. According to the design specifications, the design is as follows: each FBAR's stack was designed in BAW filter by using Mason model. Each FBAR's shape was designed with the method of apodization electrode. The layout of BAW filter was designed. The acoustic-electromagnetic cosimulation model was built to validate the performance of the designed BAW filter. The presented design procedure is a common one, and there are two characteristics: 1) an A and EM co-simulation method is used for the final BAW filter performance validation in the design stage, thus ensures over-optimistic designs by the bare 1D Mason model are found and rejected in time; 2) An in-house developed auto-layout method is used to get compact BAW filter layout, which simplifies iterative error-and-try work here and output necessary in-plane geometry information to the A and EM cosimulation model.

  13. S-band and X-band integrated PWT photoelectron linacs

    International Nuclear Information System (INIS)

    Yu, D.; Newsham, D.; Zeng, J.; Rosenzweig, J.

    2001-01-01

    A compact high-energy injector, which has been developed by DULY Research Inc., will have wide scientific, industrial, and medical applications. The new photoelectron injector integrates the photocathode directly into a multicell linear accelerator. By focusing the beam with solenoids or permanent magnets, and producing high current with low emittance, high brightness and low energy spread are achieved. In addition to providing a small footprint and improved beam quality in an integrated structure, the compact system considerably simplifies external subsystems required to operate the photoelectron linac, including rf power transport, beam focusing, vacuum and cooling. The photoelectron linac employs an innovative Plane-Wave-Transformer (PWT) design, which provides strong cell-to-cell coupling, relaxes manufacturing tolerances and facilitates the attachment of external ports to the compact structure with minimal field interference. DULY Research Inc. under the support of the DOE Small Business Innovation Research (SBIR) program, has developed, constructed and installed a 20-MeV, S-band compact electron source at UCLA. Cold test results for this device are presented. DULY Research is also actively engaged in the development of an X-band photoelectron linear accelerator in a SBIR project. When completed, the higher frequency structure will be approximately three times smaller. Design considerations for this device are discussed following the S-band cold test results

  14. Surface correlation effects in two-band strongly correlated slabs.

    Science.gov (United States)

    Esfahani, D Nasr; Covaci, L; Peeters, F M

    2014-02-19

    Using an extension of the Gutzwiller approximation for an inhomogeneous system, we study the two-band Hubbard model with unequal band widths for a slab geometry. The aim is to investigate the mutual effect of individual bands on the spatial distribution of quasi-particle weight and charge density, especially near the surface of the slab. The main effect of the difference in band width is the presence of two different length scales corresponding to the quasi-particle profile of each band. This is enhanced in the vicinity of the critical interaction of the narrow band where an orbitally selective Mott transition occurs and a surface dead layer forms for the narrow band. For the doped case, two different regimes of charge transfer between the surface and the bulk of the slab are revealed. The charge transfer from surface/center to center/surface depends on both the doping level and the average relative charge accumulated in each band. Such effects could also be of importance when describing the accumulation of charges at the interface between structures made of multi-band strongly correlated materials.

  15. Workshop: Western hemisphere network of bird banding programs

    Science.gov (United States)

    Celis-Murillo, A.

    2007-01-01

    Purpose: To promote collaboration among banding programs in the Americas. Introduction: Bird banding and marking provide indispensable tools for ornithological research, management, and conservation of migratory birds on migratory routes, breeding and non-breeding grounds. Many countries and organizations in Latin America and the Caribbean are in the process of developing or have expressed interest in developing national banding schemes and databases to support their research and management programs. Coordination of developing and existing banding programs is essential for effective data management, reporting, archiving and security, and most importantly, for gaining a fuller understanding of migratory bird conservation issues and how the banding data can help. Currently, there is a well established bird-banding program in the U.S.A. and Canada, and programs in other countries are being developed as well. Ornithologists in many Latin American countries and the Caribbean are interested in using banding and marking in their research programs. Many in the ornithological community are interested in establishing banding schemes and some countries have recently initiated independent banding programs. With the number of long term collaborative and international initiatives increasing, the time is ripe to discuss and explore opportunities for international collaboration, coordination, and administration of bird banding programs in the Western Hemisphere. We propose the second ?Western Hemisphere Network of Bird Banding Programs? workshop, in association with the SCSCB, to be an essential step in the progress to strengthen international partnerships and support migratory bird conservation in the Americas and beyond. This will be the second multi-national meeting to promote collaboration among banding programs in the Americas (the first meeting was held in October 8-9, 2006 in La Mancha, Veracruz, Mexico). The Second ?Western Hemisphere Network of Bird Banding Programs

  16. A programmable ultra-low noise X-band exciter.

    Science.gov (United States)

    MacMullen, A; Hoover, L R; Justice, R D; Callahan, B S

    2001-07-01

    A programmable ultra-low noise X-band exciter has been developed using commercial off-the-shelf components. Its phase noise is more than 10 dB below the best available microwave synthesizers. It covers a 7% frequency band with 0.1-Hz resolution. The X-band output at +23 dBm is a combination of signals from an X-band sapphire-loaded cavity oscillator (SLCO), a low noise UHF frequency synthesizer, and special-purpose frequency translation and up-conversion circuitry.

  17. Block 3 X-band receiver-exciter

    Science.gov (United States)

    Johns, C. E.

    1987-01-01

    The development of an X-band exciter, for use in the X-Band Uplink Subsystem, was completed. The exciter generates the drive signal for the X-band transmitter and also generates coherent test signals for the S- and X-band Block 3 translator and a Doppler reference signal for the Doppler extractor system. In addition to the above, the exciter generates other reference signals that are described. Also presented is an overview of the exciter design and some test data taken on the prototype. A brief discussion of the Block 3 Doppler extractor is presented.

  18. Deflation of gastric band balloon in pregnancy for improving outcomes.

    Science.gov (United States)

    Jefferys, Amanda E; Siassakos, Dimitrios; Draycott, Tim; Akande, Valentine A; Fox, Robert

    2013-04-30

    In line with the rise in the prevalence of obesity, an increasing number of women of childbearing age are undergoing laparoscopic adjustable gastric banding (LAGB), resulting in an increasing number of pregnancies with a band in place. Currently, there is no consensus on optimal band management in pregnancy. Some clinicians advocate leaving the band balloon inflated to reduce gestational weight gain and associated adverse perinatal outcomes. However, there are concerns that maintaining balloon inflation during pregnancy might increase the risk of band complications and adversely affect fetal development and/or growth as a result of reduced nutritional intake. To compare maternal and perinatal outcomes for elective gastric band balloon deflation versus intention to maintain balloon inflation during pregnancy. We searched the Cochrane Pregnancy and Childbirth Group's Trials Register (30 September 2012) and the Web of Science database (1940 to September 2012). Randomised-controlled trials comparing elective deflation of the gastric band balloon with intention to maintain balloon inflation in pregnant women who have undergone LAGB. Two review authors independently assessed studies for inclusion. No studies met the criteria for inclusion in the review. To date no randomised controlled trials exist that compare elective deflation of the gastric band balloon in pregnancy versus intention to maintain balloon inflation. Further research is needed to define the optimum management of the gastric band balloon in pregnancy.

  19. Injuries and Injury Prevention in the US Army Band

    National Research Council Canada - National Science Library

    Knapik, Joseph J; Jones, Sarah B; Ohlin, Doug W; Canham-Chervak, Michelle; Darakjy, Salima S; Goddard, Donald E; Hauret, Keith G; Hadley, Jeffrey A; Twombly, Gregory; Harkins, Deanna K

    2006-01-01

    ...) medical data from the Defense Medical Surveillance System, 3) audiograms of Band member from the Defense Occupational and Environmental Health Readiness System-Hearing Conservation database, 4...

  20. Conservation of topological quantum numbers in energy bands

    International Nuclear Information System (INIS)

    Chang, L.N.; Liang, Y.

    1988-01-01

    Quantum systems described by parametrized Hamiltinians are studied in a general context. Within this context, the classification scheme of Avron-Seiler-Simon for non-degenerate energy bands is extended to cover general parameter spaces, whole their sum rule is generalized to cover cases with degenerate bands as well. Additive topological quantum numbers are defined, and these are shown to be conserved in energy band ''collisions''. The conservation laws dictate that when some invariants are non-vanishing, no energy gap can develop in a set of degenerate bands. This gives rise to a series of splitting rules

  1. The amniotic band syndrome: antenatal sonographic diagnosis and potential pitfalls.

    Science.gov (United States)

    Mahony, B S; Filly, R A; Callen, P W; Golbus, M S

    1985-05-01

    Amniotic band syndrome causes a variety of fetal malformations involving the limbs, craniofacial region, and trunk. Six prenatally diagnosed cases of amniotic band syndrome are discussed. The diagnosis was based on sonographic visualization of either amniotic sheets or bands associated with fetal deformation or deformities in nonembryologic distributions known to characterize the amniotic band syndrome. Seven additional cases are considered in which an aberrant sheet of tissue with a free edge was visualized within the amniotic cavity but no restriction of fetal motion or subsequent deformity was demonstrated.

  2. Band structures in the nematic elastomers phononic crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shuai [Department of Mechanics, School of Civil Engineering, Beijing Jiaotong University, Beijing 100044 (China); School of Civil Engineering and Architecture, Anyang Normal University, Anyang 455000 (China); Liu, Ying, E-mail: yliu5@bjtu.edu.cn [Department of Mechanics, School of Civil Engineering, Beijing Jiaotong University, Beijing 100044 (China); Liang, Tianshu [Department of Mechanics, School of Civil Engineering, Beijing Jiaotong University, Beijing 100044 (China)

    2017-02-01

    As one kind of new intelligent materials, nematic elastomers (NEs) represent an exciting physical system that combines the local orientational symmetry breaking and the entropic rubber elasticity, producing a number of unique physical phenomena. In this paper, the potential application of NEs in the band tuning is explored. The band structures in two kinds of NE phononic crystals (PCs) are investigated. Through changing NE intrinsic parameters, the influence of the porosity, director rotation and relaxation on the band structures in NE PCs are analyzed. This work is a meaningful try for application of NEs in acoustic field and proposes a new intelligent strategy in band turning.

  3. Band structures in the nematic elastomers phononic crystals

    International Nuclear Information System (INIS)

    Yang, Shuai; Liu, Ying; Liang, Tianshu

    2017-01-01

    As one kind of new intelligent materials, nematic elastomers (NEs) represent an exciting physical system that combines the local orientational symmetry breaking and the entropic rubber elasticity, producing a number of unique physical phenomena. In this paper, the potential application of NEs in the band tuning is explored. The band structures in two kinds of NE phononic crystals (PCs) are investigated. Through changing NE intrinsic parameters, the influence of the porosity, director rotation and relaxation on the band structures in NE PCs are analyzed. This work is a meaningful try for application of NEs in acoustic field and proposes a new intelligent strategy in band turning.

  4. Electronic band structure of lithium, sodium and potassium fluorides

    International Nuclear Information System (INIS)

    Jouanin, C.; Albert, J.P.; Gout, C.

    1975-01-01

    A mixed tight-binding, pseudopotential method is proposed to calculate the energy band structure of large-gap crystals and is tested here on LiF, NaF and KF. Three-centre terms are included in the determination of the valence bands by the tight-binding method and for the conduction bands we use a pseudopotential model proposed by Bassani and Giuliano, modified for the positive ions. By taking into account the polarization corrections, transitions calculated from the energy band structures are compared with experimental data and the agreement is generally good

  5. Multiple superdeformed bands in Sr, Y, and Zr nuclei

    International Nuclear Information System (INIS)

    Reviol, W.; Sarantites, D.G.; Lerma, F.; Devlin, M.; LaFosse, D.R.; Chiara, C.J.; Wyss, R.; Baktash, C.; Jin, H.-Q.; Tabor, S.L.; Soltysik, D.; Clark, R.M.; Lee, I.Y.; Macchiavelli, A.O.; MacLeod, R.W.

    2003-01-01

    Multiple superdeformed bands in the nuclei 80-83Sr, 82-84Y, and 83,84Zr have been studied in a backed-target experiment using the Gammasphere and Microball detector arrays. For 15 bands in these nuclei, average transition quadrupole moments (Qt) have been measured accurately. Among those are two pairs of 'isospectral' bands and the Qt values obtained in each case are nearly identical. The measured Qt values and dynamical moments of inertia place stringent conditions on configuration assignments for the bands obtained from mean field calculations

  6. The complex band structure for armchair graphene nanoribbons

    International Nuclear Information System (INIS)

    Zhang Liu-Jun; Xia Tong-Sheng

    2010-01-01

    Using a tight binding transfer matrix method, we calculate the complex band structure of armchair graphene nanoribbons. The real part of the complex band structure calculated by the transfer matrix method fits well with the bulk band structure calculated by a Hermitian matrix. The complex band structure gives extra information on carrier's decay behaviour. The imaginary loop connects the conduction and valence band, and can profoundly affect the characteristics of nanoscale electronic device made with graphene nanoribbons. In this work, the complex band structure calculation includes not only the first nearest neighbour interaction, but also the effects of edge bond relaxation and the third nearest neighbour interaction. The band gap is classified into three classes. Due to the edge bond relaxation and the third nearest neighbour interaction term, it opens a band gap for N = 3M − 1. The band gap is almost unchanged for N = 3M + 1, but decreased for N = 3M. The maximum imaginary wave vector length provides additional information about the electrical characteristics of graphene nanoribbons, and is also classified into three classes

  7. Photodensitometric tracing of Mach bands and its significance

    International Nuclear Information System (INIS)

    Yoo, Shi Joon; Cho, Kyung Sik; Kang, Heung Sik; Cho, Byung Jae

    1984-01-01

    Mach bands, a visual phenomenon resulting from lateral inhibitory impulses in the retina, are recognized as lucent or dense lines at the borders of different radiographic densities. A number of clinical situations have been described in which Mach bands may cause difficulty in radiographic diagnosis. Photodensitometric measurement of the film can differentiate the true change in film density from the Mach band which is an optical illusion. Authors present several examples of photodensitometric tracings of Mach bands, with the brief review of the mechanism of their production

  8. Picosecond thermometer in the amide I band of myoglobin

    DEFF Research Database (Denmark)

    Austin, R.H.; Xie, A.; Meer, L. van der

    2005-01-01

    The amide I and II bands in myoglobin show a heterogeneous temperature dependence, with bands at 6.17 and 6.43 mu m which are more intense at low temperatures. The amide I band temperature dependence is on the long wavelength edge of the band, while the short wavelength side has almost...... can be used to determine the time it takes vibrational energy to flow into the hydration shell. We determine that vibrational energy flow to the hydration shell from the amide I takes approximately 20 ps to occur....

  9. Macroscopic optical response and photonic bands

    International Nuclear Information System (INIS)

    Pérez-Huerta, J S; Luis Mochán, W; Ortiz, Guillermo P; Mendoza, Bernardo S

    2013-01-01

    We develop a formalism for the calculation of the macroscopic dielectric response of composite systems made of particles of one material embedded periodically within a matrix of another material, each of which is characterized by a well-defined dielectric function. The nature of these dielectric functions is arbitrary, and could correspond to dielectric or conducting, transparent or opaque, absorptive and dispersive materials. The geometry of the particles and the Bravais lattice of the composite are also arbitrary. Our formalism goes beyond the long-wavelength approximation as it fully incorporates retardation effects. We test our formalism through the study of the propagation of electromagnetic waves in two-dimensional photonic crystals made of periodic arrays of cylindrical holes in a dispersionless dielectric host. Our macroscopic theory yields a spatially dispersive macroscopic response which allows the calculation of the full photonic band structure of the system, as well as the characterization of its normal modes, upon substitution into the macroscopic field equations. We can also account approximately for the spatial dispersion through a local magnetic permeability and analyze the resulting dispersion relation, obtaining a region of left handedness. (paper)

  10. Metallic photonic band-gap materials

    International Nuclear Information System (INIS)

    Sigalas, M.M.; Chan, C.T.; Ho, K.M.; Soukoulis, C.M.

    1995-01-01

    We calculate the transmission and absorption of electromagnetic waves propagating in two-dimensional (2D) and 3D periodic metallic photonic band-gap (PBG) structures. For 2D systems, there is substantial difference between the s- and p-polarized waves. The p-polarized waves exhibit behavior similar to the dielectric PBG's. But, the s-polarized waves have a cutoff frequency below which there are no propagating modes. For 3D systems, the results are qualitatively the same for both polarizations but there are important differences related to the topology of the structure. For 3D structures with isolated metallic scatterers (cermet topology), the behavior is similar to that of the dielectric PBG's, while for 3D structures with the metal forming a continuous network (network topology), there is a cutoff frequency below which there are no propagating modes. The systems with the network topology may have some interesting applications for frequencies less than about 1 THz where the absorption can be neglected. We also study the role of the defects in the metallic structures

  11. Severe neurological complication following adjustable gastric banding.

    Science.gov (United States)

    Martines, G; Musa, N; Aquilino, F; Capuano, P

    2018-01-01

    In the last years with the increase of bariatric surgery, first of all as a result of new indications, a rise in the incidence of nutrient-related complications has been observed. Currently little is known about the impact of post-bariatric malnutrition and neurological complications. Wernicke's encephalopathy is a severe neurological syndrome which occurs as a result of thiamine deficiency. Wernicke-Korsakoff syndrome must be considered a serious neurological complication of bariatric surgery with significant morbidity and mortality, with rapidly progressing neurological symptoms, and must be treated immediately. We report the case of a 35 years-old male patient, affected by morbid obesity, anxious-depressive syndrome and alcohol use disorder, who after adjustable gastric banding implanted in another hospital developed a severe malnutrition and neurological syndrome. The patient showed poor adherence to the follow-up and to the dietary indications and after all, we needed to place a PEG for enteral nutrition in order to resolve the malnutrition condition and the neurological syndrome. Our experience emphasizes that preoperative selection and assessment of a patient's nutritional status according to guidelines, is required to identify potential problems, and that bariatric surgeons or physicians caring for patient who have undergone bariatric surgery should be familiar with the constellation of nutritional and neurological disorder that may occur after surgery. We want to remark the importance of preoperative selection of the patients, the follow-up and the cooperation between patient and physician in order to obtain the best result and avoid severe complications.

  12. MR findings in iliotibial band syndrome

    International Nuclear Information System (INIS)

    Nishimura, G.; Yamato, M.; Tamai, K.; Takahashi, J.; Uetani, M.

    1997-01-01

    Objective. To elucidate the MR findings in iliotibial band (ITB) syndrome. Design and patients. The subjects comprised four patients (five knees) with lateral knee pain: two athletes and two non-athletes. One non-athlete was engaged in work requiring repetitive knee movement, and the other suffered from Cushing syndrome and had bilateral abnormalities. All patients were suspected of having a lateral meniscal tear prior to MR examination, but physical examination following provisional MR diagnosis warranted the final diagnosis. MR studies included fast spin echo sagittal imaging, fat-saturated fast spin echo proton density coronal imaging, and T2* radial imaging. Twelve normal volunteers were examined. Results and conclusion. Fat-saturated coronal imaging demonstrated an ill-defined, high-intensity area deep to the ITB. T2* radial imaging showed an identical, but less conspicuous, abnormality. The MR finding suggested soft tissue inflammation and/or edema rather than focal fluid collection in the bursae. The signal alteration predominated in the region beneath the posterior fibers of the ITB, thus supporting the current opinion that the posterior fibers of the ITB are tighter against the lateral femoral epicondyle than the anterior fibers. The ITB itself did not show any signal alteration or increased thickness. (orig.). With 4 figs., 1 tab

  13. Topological nanophononic states by band inversion

    Science.gov (United States)

    Esmann, Martin; Lamberti, Fabrice Roland; Senellart, Pascale; Favero, Ivan; Krebs, Olivier; Lanco, Loïc; Gomez Carbonell, Carmen; Lemaître, Aristide; Lanzillotti-Kimura, Norberto Daniel

    2018-04-01

    Nanophononics is essential for the engineering of thermal transport in nanostructured electronic devices, it greatly facilitates the manipulation of mechanical resonators in the quantum regime, and it could unveil a new route in quantum communications using phonons as carriers of information. Acoustic phonons also constitute a versatile platform for the study of fundamental wave dynamics, including Bloch oscillations, Wannier-Stark ladders, and other localization phenomena. Many of the phenomena studied in nanophononics were inspired by their counterparts in optics and electronics. In these fields, the consideration of topological invariants to control wave dynamics has already had a great impact for the generation of robust confined states. Interestingly, the use of topological phases to engineer nanophononic devices remains an unexplored and promising field. Conversely, the use of acoustic phonons could constitute a rich platform to study topological states. Here, we introduce the concept of topological invariants to nanophononics and experimentally implement a nanophononic system supporting a robust topological interface state at 350 GHz. The state is constructed through band inversion, i.e., by concatenating two semiconductor superlattices with inverted spatial mode symmetries. The existence of this state is purely determined by the Zak phases of the constituent superlattices, i.e., the one-dimensional Berry phase. We experimentally evidenced the mode through Raman spectroscopy. The reported robust topological interface states could become part of nanophononic devices requiring resonant structures such as sensors or phonon lasers.

  14. Annual Growth Bands in Hymenaea courbaril

    Energy Technology Data Exchange (ETDEWEB)

    Westbrook, J A; Guilderson, T P; Colinvaux, P A

    2004-02-09

    One significant source of annual temperature and precipitation data arises from the regular annual secondary growth rings of trees. Several tropical tree species are observed to form regular growth bands that may or may not form annually. Such growth was observed in one stem disk of the tropical legume Hymenaea courbaril near the area of David, Panama. In comparison to annual reference {Delta}{sup 14}C values from wood and air, the {Delta}{sup 14}C values from the secondary growth rings formed by H. courbaril were determined to be annual in nature in this one stem disk specimen. During this study, H. courbaril was also observed to translocate recently produced photosynthate into older growth rings as sapwood is converted to heartwood. This process alters the overall {Delta}{sup 14}C values of these transitional growth rings as cellulose with a higher {Delta}{sup 14}C content is translocated into growth rings with a relatively lower {Delta}{sup 14}C content. Once the annual nature of these growth rings is established, further stable isotope analyses on H. courbaril material in other studies may help to complete gaps in the understanding of short and of long term global climate patterns.

  15. Electronic Band Structure of Helical Polyisocyanides.

    Science.gov (United States)

    Champagne, Benoît; Liégeois, Vincent; Fripiat, Joseph G; Harris, Frank E

    2017-10-19

    Restricted Hartree-Fock computations are reported for a methyl isocyanide polymer (repeating unit -C═N-CH 3 ), whose most stable conformation is expected to be a helical chain. The computations used a standard contracted Gaussian orbital set at the computational levels STO-3G, 3-21G, 6-31G, and 6-31G**, and studies were made for two line-group configurations motivated by earlier work and by studies of space-filling molecular models: (1) A structure of line-group symmetry L9 5 , containing a 9-fold screw axis with atoms displaced in the axial direction by 5/9 times the lattice constant, and (2) a structure of symmetry L4 1 that had been proposed, containing a 4-fold screw axis with translation by 1/4 of the lattice constant. Full use of the line-group symmetry was employed to cause most of the computational complexity to depend only on the size of the asymmetric repeating unit. Data reported include computed bond properties, atomic charge distribution, longitudinal polarizability, band structure, and the convoluted density of states. Most features of the description were found to be insensitive to the level of computational approximation. The work also illustrates the importance of exploiting line-group symmetry to extend the range of polymer structural problems that can be treated computationally.

  16. Rotational band structure in 132La

    International Nuclear Information System (INIS)

    Oliveira, J.R.B.; Emediato, L.G.R.; Rizzutto, M.A.; Ribas, R.V.; Seale, W.A.; Rao, M.N.; Medina, N.H.; Botelho, S.; Cybulska, E.W.

    1989-01-01

    '3'2La was studied using on-line gamma-spectroscopy through the reactions '1 24,126 Te( 11,10 B, 3, 4n) 132 La. The excitation function was obtained with 10 B(E lab =41.4; 45.4 and 48 MeV) in order to identify 132 La gamma-transitions. Gamma-gamma coincidences and angular distributions were performed for the 126 Te( 10 B, 4n) 132 La reaction. From the experimental results a rotational band with strongest M1 transitions and less intense 'cross-overs' E2 transitions was constructed. Using the methods of Bengtsson and Frauendorf the alignment (ix) and the Routhian (e') as a function of the angular velocity (ω) were also obtained from the experimental data. It was observed a constant alignment up to ω≅0.4 MeV, and a signature-splitting Δe'=25keV. Preliminary triaxial Cranking-Shell Model calculations indicate that a γ=-8deg deformation is consistent with the signature-splitting value of 25 keV experimentally observed. (Author) [es

  17. Band structure studies of actinide systems

    International Nuclear Information System (INIS)

    Koelling, D.D.

    1976-01-01

    The nature of the f-orbitals in an actinide system plays a crucial role in determining the electronic properties. It has long been realized that when the actinide separation is small enough for the f-orbitals to interact directly, the system will exhibit itinerant electron properties: an absence of local moment due to the f-orbitals and sometimes even superconductivity. However, a number of systems with the larger actinide separation that should imply local moment behavior also exhibit intinerant properties. Such systems (URh 3 , UIr 3 , UGe 3 , UC) were examined to learn something about the other f-interactions. A preliminary observation made is that there is apparently a very large and ansiotropic mass enhancement in these systems. There is very good reason to believe that this is not solely due to large electron--electron correlations but to a large electron--phonon interaction as well. These features of the ''non-magnetic'', large actinide separation systems are discussed in light of our results to date. Finally, the results of some recent molecular calculations on actinide hexafluorides are used to illustrate the shielding effects on the intra-atomic Coulomb term U/sub f-f/ which would appear in any attempt to study the formation of local moments. As one becomes interested in materials for which a band structure is no longer an adequate model, this screened U/sub ff/ is the significant parameter and efforts must be made to evaluate it in solid state systems

  18. Band structure, band offsets, substitutional doping, and Schottky barriers of bulk and monolayer InSe

    Science.gov (United States)

    Guo, Yuzheng; Robertson, John

    2017-09-01

    We present a detailed study of the electronic structure of the layered semiconductor InSe. We calculate the band structure of the monolayer and bulk material using density functional theory, hybrid functionals, and G W . The band gap of the monolayer InSe is calculated to be 2.4 eV in screened exchange hybrid functional, close to the experimental photoluminescence gap. The electron affinities and band offsets are calculated for vertical stacked-layer heterostructures, and are found to be suitable for tunnel field effect transistors (TFETs) in combination with WS e2 or similar. The valence-band edge of InSe is calculated to lie 5.2 eV below the vacuum level, similar to that for the closed shell systems HfS e2 or SnS e2 . Hence InSe would be suitable to act as a p -type drain in the TFET. The intrinsic defects are calculated. For Se-rich layers, the Se adatom (interstitial) is found to be the most stable defect, whereas for In-rich layers, the Se vacancy is the most stable for the neutral state. Antisites tend to have energies just above those of vacancies. The Se antisite distorts towards a bond-breaking distortion as in the EL2 center of GaAs. Both substitutional donors and acceptors are calculated to be shallow, and effective dopants. They do not reconstruct to form nondoping configurations as occurs in black phosphorus. Finally, the Schottky barriers of metals on InSe are found to be strongly pinned by metal induced gap states (MIGS) at ˜0.5 eV above the valence-band edge. Any interfacial defects would lead to a stronger pinning at a similar energy. Overall, InSe is an effective semiconductor combining the good features of 2D (lack of dangling bonds, etc.) with the good features of 3D (effective doping), which few others achieve.

  19. A UWB Band-Pass Antenna with Triple-Notched Band Using Common Direction Rectangular Complementary Split-Ring Resonators

    Directory of Open Access Journals (Sweden)

    Bo Yan

    2013-01-01

    Full Text Available A novel ultrawideband (UWB antenna which has a triple-band notch function is presented. The proposed antenna can block interfering signals from C-band satellite communication systems, IEEE802.11a, and HIPERLAN/2 WLAN systems for example. The antenna is excited by using novel common direction rectangular complementary split-ring resonators (CSRR fabricated on radiating patch of the dielectric substrate with coplanar waveguide (CPW feed strip line. The voltage standing wave ratio (VSWR of the proposed antenna is less than 2.0 in the frequency band from 2.8 to 12 GHz, while showing a very sharp band-rejection performance at 3.9 GHz, 5.2 GHz, and 5.9 GHz. The measurement results show that the proposed antenna provides good omnidirectional field pattern over its whole frequency band excluding the rejected band, which is suitable for UWB applications.

  20. A comparison of L-band and C-band rf guns as sources for inline-injection systems

    International Nuclear Information System (INIS)

    Gallardo, J.C.; Kirk, H.G.; Meyerer, T.

    1994-12-01

    We consider the beam dynamics associated with installing a BNL type 1 1/2 cell L-band or C-band rf gun before two TESLA L-band cryomodules. This system will deliver a 25 MeV electron beam with peak currents on the order of 100 A suitable for further magnetic compression. evaluate the injection systems utilizing the electron beam dynamic code PARMELA from the point of view of minimizing the transverse invariant emittance

  1. Terra MODIS Band 27 Electronic Crosstalk Effect and Its Removal

    Science.gov (United States)

    Sun, Junqiang; Xiong, Xiaoxiong; Madhavan, Sriharsha; Wenny, Brian

    2012-01-01

    The MODerate-resolution Imaging Spectroradiometer (MODIS) is one of the primary instruments in the NASA Earth Observing System (EOS). The first MODIS instrument was launched in December, 1999 on-board the Terra spacecraft. MODIS has 36 bands, covering a wavelength range from 0.4 micron to 14.4 micron. MODIS band 27 (6.72 micron) is a water vapor band, which is designed to be insensitive to Earth surface features. In recent Earth View (EV) images of Terra band 27, surface feature contamination is clearly seen and striping has become very pronounced. In this paper, it is shown that band 27 is impacted by electronic crosstalk from bands 28-30. An algorithm using a linear approximation is developed to correct the crosstalk effect. The crosstalk coefficients are derived from Terra MODIS lunar observations. They show that the crosstalk is strongly detector dependent and the crosstalk pattern has changed dramatically since launch. The crosstalk contributions are positive to the instrument response of band 27 early in the mission but became negative and much larger in magnitude at later stages of the mission for most detectors of the band. The algorithm is applied to both Black Body (BB) calibration and MODIS L1B products. With the crosstalk effect removed, the calibration coefficients of Terra MODIS band 27 derived from the BB show that the detector differences become smaller. With the algorithm applied to MODIS L1B products, the Earth surface features are significantly removed and the striping is substantially reduced in the images of the band. The approach developed in this report for removal of the electronic crosstalk effect can be applied to other MODIS bands if similar crosstalk behaviors occur.

  2. Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

    Science.gov (United States)

    Gorisse, M.; Benchabane, S.; Teissier, G.; Billard, C.; Reinhardt, A.; Laude, V.; Defaÿ, E.; Aïd, M.

    2011-06-01

    We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.

  3. Band-to-band transitions, selection rules, effective mass, and excitonic contributions in monoclinic β -Ga2O3

    Science.gov (United States)

    Mock, Alyssa; Korlacki, Rafał; Briley, Chad; Darakchieva, Vanya; Monemar, Bo; Kumagai, Yoshinao; Goto, Ken; Higashiwaki, Masataka; Schubert, Mathias

    2017-12-01

    We employ an eigenpolarization model including the description of direction dependent excitonic effects for rendering critical point structures within the dielectric function tensor of monoclinic β -Ga2O3 yielding a comprehensive analysis of generalized ellipsometry data obtained from 0.75-9 eV. The eigenpolarization model permits complete description of the dielectric response. We obtain, for single-electron and excitonic band-to-band transitions, anisotropic critical point model parameters including their polarization vectors within the monoclinic lattice. We compare our experimental analysis with results from density functional theory calculations performed using the Gaussian-attenuation-Perdew-Burke-Ernzerhof hybrid density functional. We present and discuss the order of the fundamental direct band-to-band transitions and their polarization selection rules, the electron and hole effective mass parameters for the three lowest band-to-band transitions, and their excitonic contributions. We find that the effective masses for holes are highly anisotropic and correlate with the selection rules for the fundamental band-to-band transitions. The observed transitions are polarized close to the direction of the lowest hole effective mass for the valence band participating in the transition.

  4. A conversation with Susan Band Horwitz.

    Science.gov (United States)

    Horwitz, Susan Band; Goldman, I David

    2015-01-01

    Susan Band Horwitz is a Distinguished Professor and holds the Falkenstein Chair in Cancer Research at Albert Einstein College of Medicine in New York. She is co-chair of the Department of Molecular Pharmacology and associate director for therapeutics at the Albert Einstein Cancer Center. After graduating from Bryn Mawr College, Dr. Horwitz received her PhD in biochemistry from Brandeis University. She has had a continuing interest in natural products as a source of new drugs for the treatment of cancer. Her most seminal research contribution has been in the development of Taxol(®). Dr. Horwitz and her colleagues made the discovery that Taxol had a unique mechanism of action and suggested that it was a prototype for a new class of antitumor drugs. Although Taxol was an antimitotic agent blocking cells in the metaphase stage of the cell cycle, Dr. Horwitz recognized that Taxol was blocking mitosis in a way different from that of other known agents. Her group demonstrated that the binding site for Taxol was on the β-tubulin subunit. The interaction of Taxol with the β-tubulin subunit resulted in stabilized microtubules, essentially paralyzing the cytoskeleton, thereby preventing cell division. Dr. Horwitz served as president (2002-2003) of the American Association for Cancer Research (AACR). She is a member of the National Academy of Sciences, the Institute of Medicine, the American Academy of Arts and Sciences, and the American Philosophical Society. She has received numerous honors and awards, including the C. Chester Stock Award from Memorial Sloan Kettering Cancer Center, the Warren Alpert Foundation Prize from Harvard Medical School, the Bristol-Myers Squibb Award for Distinguished Achievement in Cancer Research, the American Cancer Society's Medal of Honor, and the AACR Award for Lifetime Achievement in Cancer Research. The following interview was conducted on January 23, 2014.

  5. Polarimetric and Structural Properties of a Boreal Forest at P-Band and L-Band

    Science.gov (United States)

    Tebaldini, S.; Rocca, F.

    2010-12-01

    With this paper we investigate the structural and polarimetric of the boreal forest within the Krycklan river catchment, Northern Sweden, basing on multi-polarimetric and multi-baseline SAR surveys at P-Band and L-Band collected in the framework of the ESA campaign BioSAR 2008. The analysis has been carried out by applying the Algebraic Synthesis (AS) technique, recently introduced in literature, which provides a theoretical framework for the decomposition of the backscattered signal into ground-only and volume-only contributions, basing on both baseline and polarization diversity. The availability of multiple baselines allows the formation of a synthetic aperture not only along the azimuth direction but also in elevation. Accordingly, the backscattered echoes can be focused not only in the slant range, azimuth plane, but in the whole 3D space. This is the rationale of the SAR Tomography (T-SAR) concept, which has been widely considered in the literature of the last years. It follows that, as long as the penetration in the scattering volume is guaranteed, the vertical profile of the vegetation layer is retrieved by separating backscatter contributions along the vertical direction, which is the main reason for the exploitation of Tomographic techniques at longer wavelengths. Still, the capabilities of T-SAR are limited to imaging the global vertical structure of the electromagnetic scattering in a certain polarization. It then becomes important to develop methodologies for the investigation of the vertical structure of different Scattering Mechanisms (SMs), such as ground and volume scattering, in such a way as to derive information that can be delivered also outside the field of Radar processing. This is an issue that may become relevant at longer wavelengths, such as P-Band, where the presence of multiple scattering arising from the interaction with terrain could hinder the correct reconstruction of the forest structure. The availability of multiple polarizations

  6. Amniotic band-like structures | Govender | Obstetrics and ...

    African Journals Online (AJOL)

    Intra-amniotic band-like structures are seen fairly commonly on routine obstetric scans, especially during the first and second trimesters of pregnancy. It is important to establish the cause for such findings in order to determine their clinical significance and to assess prognosis. The vast majority of band-like structures are ...

  7. Band excitation method applicable to scanning probe microscopy

    Science.gov (United States)

    Jesse, Stephen [Knoxville, TN; Kalinin, Sergei V [Knoxville, TN

    2010-08-17

    Methods and apparatus are described for scanning probe microscopy. A method includes generating a band excitation (BE) signal having finite and predefined amplitude and phase spectrum in at least a first predefined frequency band; exciting a probe using the band excitation signal; obtaining data by measuring a response of the probe in at least a second predefined frequency band; and extracting at least one relevant dynamic parameter of the response of the probe in a predefined range including analyzing the obtained data. The BE signal can be synthesized prior to imaging (static band excitation), or adjusted at each pixel or spectroscopy step to accommodate changes in sample properties (adaptive band excitation). An apparatus includes a band excitation signal generator; a probe coupled to the band excitation signal generator; a detector coupled to the probe; and a relevant dynamic parameter extractor component coupled to the detector, the relevant dynamic parameter extractor including a processor that performs a mathematical transform selected from the group consisting of an integral transform and a discrete transform.

  8. Study of positive-parity yrast band in 83Rb

    International Nuclear Information System (INIS)

    Ganguly, S.; Banerjee, P.; Ray, I.; Kshetri, R.; Bhattacharya, S.; Saha Sarkar, M.; Goswami, A.; Muralithar, S.; Singh, R.P.; Kumar, R.; Bhowmik, R.K.

    2005-01-01

    The properties of the positive-parity yrast band in the odd-A 81,83,85 Rb (Z=37) isotopes show remarkable changes as N increases. The objective of the present work is to study the structure of the lowest positive-parity band in 83 Rb from lifetime studies

  9. Large area modules based on low band gap polymers

    DEFF Research Database (Denmark)

    Bundgaard, Eva; Krebs, Frederik C

    2010-01-01

    The use of three low band gap polymers in large area roll-to-roll coated modules is demonstrated. The polymers were prepared by a Stille cross coupling polymerization and all had a band gap around 1.6 eV. The polymers were first tested in small area organic photovoltaic devices which showed...

  10. 76 FR 56657 - Unlicensed Operation in the TV Broadcast Bands

    Science.gov (United States)

    2011-09-14

    ...-174] Unlicensed Operation in the TV Broadcast Bands AGENCY: Federal Communications Commission. ACTION... collection requirements contained in the regulations for issues relating to the unlicensed use of the TV bands (TV White Space). The information collection requirements were approved on September 7, 2011 by...

  11. Band-Structure of Thallium by the LMTO Method

    DEFF Research Database (Denmark)

    Holtham, P. M.; Jan, J. P.; Skriver, Hans Lomholt

    1977-01-01

    by an energy gap. The 6d and 7s bands were found to be far above the Fermi level and the 5d states were found to be far below it. Fermi surface properties and the electronic specific heat are computed and compared with experiment. The joint density of states has also been computed and is in reasonable...... and p bands for the HCP structure. Energy bands have been evaluated both with and without spin-orbit coupling which is particularly large in thallium. Energy bands close to the Fermi level were found to be mainly 6p like in character. The 6s states lay below the 6p bands and were separated from them......The relativistic band structure of thallium has been calculated using the linear muffin-tin orbital (LMTO) method. The positions and extents of the bands were found to follow the Wigner-Seitz rule approximately, and the origin of the dispersion of the bands was established from the canonical s...

  12. Determination of conduction and valence band electronic structure ...

    Indian Academy of Sciences (India)

    shifts in the rutile Ti d-band to lower energy with respect to anatase, i.e., ... requires excitation with UV light due to its wide band ... RIXS maps were compared to the theoretical results .... optical methods are insufficient, such as dark samples.

  13. 76 FR 51978 - Unlicensed Operation in the TV Broadcast Bands

    Science.gov (United States)

    2011-08-19

    ... this document the Office of Engineering and Technology conditionally designates Microsoft Corporation....gov . Summary of Order 1. In this Order, the Office of Engineering and Technology designates Microsoft... the TV bands, TV bands devices must include a geo-location capability and the capability to access a...

  14. Present status of intermediate band solar cell research

    International Nuclear Information System (INIS)

    Cuadra, L.; Marti, A.; Luque, A.

    2004-01-01

    The intermediate band solar cell is a theoretical concept with the potential for exceeding the performance of conventional single-gap solar cells. This novel photovoltaic converter bases its superior theoretical efficiency over single-gap solar cells by enhancing its photogenerated current, via the two-step absorption of sub-band gap photons, without reducing its output voltage. This is achieved through a material with an electrically isolated and partially filled intermediate band located within a higher forbidden gap. This material is commonly named intermediate band material. This paper centres on summarising the present status of intermediate band solar cell research. A number of attempts, which aim to implement the intermediate band concept, are being followed: the direct engineering of the intermediate band material, its implementation by means of quantum dots and the highly porous material approach. Among other sub-band gap absorbing proposals, there is a renewed interest on the impurity photovoltaic effect, the quantum well solar cells and the particularly promising proposal for the use of up- and down-converters

  15. 47 CFR 18.303 - Prohibited frequency bands.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 1 2010-10-01 2010-10-01 false Prohibited frequency bands. 18.303 Section 18.303 Telecommunication FEDERAL COMMUNICATIONS COMMISSION GENERAL INDUSTRIAL, SCIENTIFIC, AND MEDICAL EQUIPMENT Technical Standards § 18.303 Prohibited frequency bands. Operation of ISM equipment within the...

  16. Gastroscopic treatment of gastric band penetrating the gastric wall

    DEFF Research Database (Denmark)

    Jess, Per; Fonnest, G

    1999-01-01

    Gastric wall penetration of a gastric band after operation for morbid obesity is a well known late complication. The treatment is usually reoperation. In this case report we show that a band penetrating the gastric wall can be successfully treated by gastroscopic operation. This technique is more...

  17. Health Risks Faced by Public School Band Directors

    Science.gov (United States)

    Woolery, Danielle N.; Woolery, Jesse A.

    2013-01-01

    Public school band directors face many work-related hazards in their grueling, yet rewarding job. As a school year progresses, directors are expected to work long hours, while trying to balance professional and personal responsibilities. A band director whose career spans multiple decades can potentially face a number of serious medical problems.…

  18. Wurtzite gallium phosphide has a direct-band gap

    NARCIS (Netherlands)

    Assali, S.; Zardo, I.; Plissard, S.; Verheijen, M.A.; Haverkort, J.E.M.; Bakkers, E.P.A.M.

    2013-01-01

    Gallium Phosphide (GaP) with the normal cubic crystal structure has an indirect band gap, which severely limits the emission efficiency. We report the fabrication of GaP nanowires with pure hexagonal crystal structure and demonstrate the direct nature of the band gap. We observe strong

  19. Popular Music Pedagogy: Band Rehearsals at British Universities

    Science.gov (United States)

    Pulman, Mark

    2014-01-01

    There has been little published pedagogical research on popular music group rehearsing. This study explores the perceptions of tutors and student pop/rock bands about the rehearsals in which they were involved as a part of their university music course. The participants were 10 tutors and 16 bands from eight British tertiary institutions. Analysis…

  20. Amniotiese Bande by 'n Baba na Abdominale Swangerskap | du P ...

    African Journals Online (AJOL)

    A baby, delivered by Caesarean section after a 36-week extra-uterine pregnancy, with deformities due to amniotic bands, is described. The mechanism of amniotic band deformities and the paediatric risks of extra-uterine pregnancy are briefly discussed. S. Afr. Med. J., 48, 1106 (1974) ...

  1. Deformation bands in porous carbonate grainstones: Field and laboratory observations

    NARCIS (Netherlands)

    Cilona, A.; Baud, P.; Tondi, E.; Agosta, F.; Vinciguerra, S.; Rustichelli, A.; Spiers, C.J.

    2012-01-01

    Recent field-based studies documented deformation bands in porous carbonates; these structures accommodate volumetric and/or shear strain by means of pore collapse, grain rotation and/or sliding. Microstructural observations of natural deformation bands in carbonates showed that, at advanced stages

  2. Steel Band Repertoire: The Case for Original Music

    Science.gov (United States)

    Tanner, Chris

    2010-01-01

    In the past few decades, the steel band art form has experienced consistent growth and development in several key respects. For example, in the United States, the sheer number of steel band programs has steadily increased, and it appears that this trend will continue in the future. Additionally, pan builders and tuners have made great strides in…

  3. Non-equilibrium and band tailing in organic conductors

    Indian Academy of Sciences (India)

    . Non-equilibrium ... Introduction. Study of organic conductors and semiconductors continues to generate interest with the ... Band tailing reduces band gap or the acti- ..... (9), we can identify Eg(0) with the focal point and is proportional to P2. 1 .

  4. Deexcitation of superdeformed bands in the nucleus Tb-151

    NARCIS (Netherlands)

    Finck, C; Appelbe, D; Beck, FA; Byrski, T; Cullen, D; Curien, D; deFrance, G; Duchene, G; Erturk, S; Haas, B; Khadiri, N; Kharraja, B; Prevost, D; Rigollet, C; Stezowski, O; Twin, P; Vivien, JP; Zuber, K

    1997-01-01

    The aim of this work is to get more informations about the decay-out of superdeformed bands. One of the best candidates in the mass A similar or equal to 150 region for that kind of research is the nucleus Tb-151. From previous works, it has been established that the first excited band goes lower in

  5. Evaluation of a color fused dual-band NVG

    NARCIS (Netherlands)

    Hogervorst, M.A.; Toet, A.

    2009-01-01

    We designed and evaluated a dual-band Night Vision Goggles sensor system. The sensor system consists of two optically aligned NVGs fitted with filters splitting the sensitive range into a visual and a near-infrared band. The Color-the-night technique (Hogervorst & Toet, FUSION2008) was used to fuse

  6. Evaluation of a color fused dual-band NVG

    NARCIS (Netherlands)

    Hogervorst, M.A.; Toet, A.

    2009-01-01

    We have tested a prototype dual-band NVG system consisting of two NVGs fitted with filters that split the NVG sensitive range into a short (visual) and a long wavelength (NIR) band. The Color-the-night technique (see Hogervorst & Toet, SPIE D&S ‘08) was used to fuse the images of the two sensors. We

  7. Exposure measuring techniques for wide band mobile radio-communications

    International Nuclear Information System (INIS)

    Trinchero, S.; Benedetto, A.; Anglesio, L.; D'Amore, G.; Trinchero, D.

    2004-01-01

    The paper illustrates the limits and performances of different experimental monitoring techniques, which are applied to digitally modulated radiofrequency electromagnetic fields used for mobile telecommunications. Different experimental set-ups have been developed, verified and applied for the analysis and characterisation of wide band probes and narrow band measuring procedures. (authors)

  8. Constriction of the Stomach by an Unusual Peritoneal Band.

    Science.gov (United States)

    Kassem, Mohammad W; Patel, Mayank; Iwanaga, Joe; Loukas, Marios; Tubbs, R Shane

    2018-02-03

    Compression of intraabdominal contents can occur due to anomalous congenital bands. Herein, we describe, to our knowledge, the first case of compression of the stomach by an anomalous band extending from the lesser omentum to the greater omentum. Relevant literature is reviewed and the clinical implications of such a case are described.

  9. K-Band Traveling-Wave Tube Amplifier

    Science.gov (United States)

    Force, Dale A.; Simons, Rainee N.; Peterson, Todd T.; Spitsen, Paul C.

    2010-01-01

    A new space-qualified, high-power, high-efficiency, K-band traveling-wave tube amplifier (TWTA) will provide high-rate, high-capacity, direct-to-Earth communications for science data and video gathered by the Lunar Reconnaissance Orbiter (LRO) during its mission. Several technological advances were responsible for the successful demonstration of the K-band TWTA.

  10. L-Band Polarimetric Correlation Radiometer with Subharmonic Sampling

    DEFF Research Database (Denmark)

    Rotbøll, Jesper; Søbjærg, Sten Schmidl; Skou, Niels

    2001-01-01

    A novel L-band radiometer trading analog complexity for digital ditto has been designed and built. It is a fully polarimetric radiometer of the correlation type and it is based on the sub-harmonic sampling principle in which the L-band signal is directly sampled by a fast A to D converter...

  11. A novel L-band polarimetric radiometer featuring subharmonic sampling

    DEFF Research Database (Denmark)

    Rotbøll, J.; Søbjærg, Sten Schmidl; Skou, Niels

    2003-01-01

    A novel L-band radiometer trading analog components for digital circuits has been designed, built and operated. It is a fully polarimetric radiometer of the correlation type, and it is based on the subharmonic sampling principle in which the L-band signal is directly sampled by a fast A to D...

  12. Shell model description of band structure in 48Cr

    International Nuclear Information System (INIS)

    Vargas, Carlos E.; Velazquez, Victor M.

    2007-01-01

    The band structure for normal and abnormal parity bands in 48Cr are described using the m-scheme shell model. In addition to full fp-shell, two particles in the 1d3/2 orbital are allowed in order to describe intruder states. The interaction includes fp-, sd- and mixed matrix elements

  13. Excited bands in even-even rare-earth nuclei

    International Nuclear Information System (INIS)

    Vargas, Carlos E.; Hirsch, Jorge G.

    2004-01-01

    The energetics of states belonging to normal parity bands in even-even dysprosium isotopes, and their B(E2) transition strengths, are studied using an extended pseudo-SU(3) shell model. States with pseudospin 1 are added to the standard pseudospin 0 space, allowing for a proper description of known excited normal parity bands

  14. Band Gap Engineering of Titania Systems Purposed for Photocatalytic Activity

    Science.gov (United States)

    Thurston, Cameron

    Ab initio computer aided design drastically increases candidate population for highly specified material discovery and selection. These simulations, carried out through a first-principles computational approach, accurately extrapolate material properties and behavior. Titanium Dioxide (TiO2 ) is one such material that stands to gain a great deal from the use of these simulations. In its anatase form, titania (TiO2 ) has been found to exhibit a band gap nearing 3.2 eV. If titania is to become a viable alternative to other contemporary photoactive materials exhibiting band gaps better suited for the solar spectrum, then the band gap must be subsequently reduced. To lower the energy needed for electronic excitation, both transition metals and non-metals have been extensively researched and are currently viable candidates for the continued reduction of titania's band gap. The introduction of multicomponent atomic doping introduces new energy bands which tend to both reduce the band gap and recombination loss. Ta-N, Nb-N, V-N, Cr-N, Mo-N, and W-N substitutions were studied in titania and subsequent energy and band gap calculations show a favorable band gap reduction in the case of passivated systems.

  15. Macroeconomic stabilization and intervention policy under an exchange rate band

    NARCIS (Netherlands)

    Beetsma, R.M.W.J.; van der Ploeg, F.

    1998-01-01

    Macroeconomic stabilization and foreign exchange market interventions are investigated for a small open economy with a nominal exchange rate band. In a first-best situation, a band is not advisable from a stabilization perspective, even though with money demand shocks no welfare losses are incurred.

  16. The influence of laparoscopic adjustable gastric banding on gastroesophageal reflux

    NARCIS (Netherlands)

    de Jong, [No Value; van Ramshorst, B; Timmer, R; Gooszen, HG; Smout, AJPM

    Background: Laparoscopic adjustable gastric banding (LAGB) influences gastroesophageal reflux. Methods: 26 patients undergoing gastric banding were assessed by a questionnaire for symptom analysis, 24-hour pH monitoring, endoscopy and barium swallows, preoperatively, at 6 weeks and at 6 months after

  17. The influence of laparoscopic adjustable gastric banding on gastroesophageal reflux

    NARCIS (Netherlands)

    de Jong, Justin R.; van Ramshorst, Bert; Timmer, Robin; Gooszen, Hein G.; Smout, André J. P. M.

    2004-01-01

    BACKGROUND: Laparoscopic adjustable gastric banding (LAGB) influences gastroesophageal reflux. METHODS: 26 patients undergoing gastric banding were assessed by a questionnaire for symptom analysis, 24-hour pH monitoring, endoscopy and barium swallows, preoperatively, at 6 weeks and at 6 months after

  18. Strain gradient drives shear banding in metallic glasses

    Science.gov (United States)

    Tian, Zhi-Li; Wang, Yun-Jiang; Chen, Yan; Dai, Lan-Hong

    2017-09-01

    Shear banding is a nucleation-controlled process in metallic glasses (MGs) involving multiple temporal-spatial scales, which hinders a concrete understanding of its structural origin down to the atomic scale. Here, inspired by the morphology of composite materials, we propose a different perspective of MGs as a hard particle-reinforced material based on atomic-scale structural heterogeneity. The local stable structures indicated by a high level of local fivefold symmetry (L5FS) act as hard "particles" which are embedded in the relatively soft matrix. We demonstrate this concept by performing atomistic simulations of shear banding in CuZr MG. A shear band is prone to form in a sample with a high degree of L5FS which is slowly quenched from the liquid. An atomic-scale analysis on strain and the structural evolution reveals that it is the strain gradient effect that has originated from structural heterogeneity that facilitates shear transformation zones (STZs) to mature shear bands. An artificial composite model with a high degree of strain gradient, generated by inserting hard MG strips into a soft MG matrix, demonstrates a great propensity for shear banding. It therefore confirms the critical role strain gradient plays in shear banding. The strain gradient effect on shear banding is further quantified with a continuum model and a mechanical instability analysis. These physical insights might highlight the strain gradient as the hidden driving force in transforming STZs into shear bands in MGs.

  19. Band structure of superlattice with δ-like potential

    International Nuclear Information System (INIS)

    Gashimzade, N.F.; Gashimzade, F.M.; Hajiev, A.T.

    1993-08-01

    Band structure of superlattice with δ-like potential has been calculated taking into account interaction of carriers of different kinds. Superlattices of semiconductors with degenerated valence band and zero-gap semiconductors have been considered. For the latter semimetal-semiconductor transition has been obtained. (author). 8 refs, 1 fig

  20. Breeding biology and diet of Banded Kestrels Falco zoniventris on ...

    African Journals Online (AJOL)

    All Banded Kestrel nests were placed inside clusters of epiphytic arboreal plants composed of Asplenium nidus, Phymatodes scolopendria and Medinilla sp. and averaged 18m above the ground. Banded Kestrel diet, derived from 188 prey items, comprised 47% chameleons, 18% other lizards, 31% insects, 3% birds, a frog ...