WorldWideScience

Sample records for high-k mim applications

  1. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-01-01

    zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF

  2. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  3. Emerging Applications for High K Materials in VLSI Technology

    Science.gov (United States)

    Clark, Robert D.

    2014-01-01

    The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM) diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD) is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing. PMID:28788599

  4. Emerging Applications for High K Materials in VLSI Technology

    Directory of Open Access Journals (Sweden)

    Robert D. Clark

    2014-04-01

    Full Text Available The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI manufacturing for leading edge Dynamic Random Access Memory (DRAM and Complementary Metal Oxide Semiconductor (CMOS applications is summarized along with the deposition methods and general equipment types employed. Emerging applications for High K dielectrics in future CMOS are described as well for implementations in 10 nm and beyond nodes. Additional emerging applications for High K dielectrics include Resistive RAM memories, Metal-Insulator-Metal (MIM diodes, Ferroelectric logic and memory devices, and as mask layers for patterning. Atomic Layer Deposition (ALD is a common and proven deposition method for all of the applications discussed for use in future VLSI manufacturing.

  5. Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications

    Science.gov (United States)

    Jayanti, Srikant

    Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG

  6. MIM capacitors with various Al2O3 thicknesses for GaAs RFIC application

    International Nuclear Information System (INIS)

    Zhou Jiahui; Xu Wenjun; Li Qi; Li Simin; He Zhiyi; Li Haiou; Chang Hudong; Liu Honggang; Liu Guiming

    2015-01-01

    The impact of various thicknesses of Al 2 O 3 metal—insulator—metal (MIM) capacitors on direct current and radio frequency (RF) characteristics is investigated. For 20 nm Al 2 O 3 , the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm 2 and acceptable voltage coefficients of capacitance of 681 ppm/V 2 at 1 MHz. An outstanding VCC-α of 74 ppm/V 2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al 2 O 3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al 2 O 3 could be very promising candidates for GaAs RFIC applications. (paper)

  7. High-Performance MIM Capacitors for a Secondary Power Supply Application

    Directory of Open Access Journals (Sweden)

    Jiliang Mu

    2018-02-01

    Full Text Available Microstructure is important to the development of energy devices with high performance. In this work, a three-dimensional Si-based metal-insulator-metal (MIM capacitor has been reported, which is fabricated by microelectromechanical systems (MEMS technology. Area enlargement is achieved by forming deep trenches in a silicon substrate using the deep reactive ion etching method. The results indicate that an area of 2.45 × 103 mm2 can be realized in the deep trench structure with a high aspect ratio of 30:1. Subsequently, a dielectric Al2O3 layer and electrode W/TiN layers are deposited by atomic layer deposition. The obtained capacitor has superior performance, such as a high breakdown voltage (34.1 V, a moderate energy density (≥1.23 mJ/cm2 per unit planar area, a high breakdown electric field (6.1 ± 0.1 MV/cm, a low leakage current (10−7 A/cm2 at 22.5 V, and a low quadratic voltage coefficient of capacitance (VCC (≤63.1 ppm/V2. In addition, the device’s performance has been theoretically examined. The results show that the high energy supply and small leakage current can be attributed to the Poole–Frenkel emission in the high-field region and the trap-assisted tunneling in the low-field region. The reported capacitor has potential application as a secondary power supply.

  8. InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

    Science.gov (United States)

    Wilt, David M.; Fatemi, Navid S.; Jenkins, Phillip P.; Weizer, Victor G.; Hoffman, Richard W., Jr.; Scheiman, David A.; Murray, Christopher S.; Riley, David R.

    2004-01-01

    There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

  9. MIMS - MEDICAL INFORMATION MANAGEMENT SYSTEM

    Science.gov (United States)

    Frankowski, J. W.

    1994-01-01

    MIMS, Medical Information Management System is an interactive, general purpose information storage and retrieval system. It was first designed to be used in medical data management, and can be used to handle all aspects of data related to patient care. Other areas of application for MIMS include: managing occupational safety data in the public and private sectors; handling judicial information where speed and accuracy are high priorities; systemizing purchasing and procurement systems; and analyzing organizational cost structures. Because of its free format design, MIMS can offer immediate assistance where manipulation of large data bases is required. File structures, data categories, field lengths and formats, including alphabetic and/or numeric, are all user defined. The user can quickly and efficiently extract, display, and analyze the data. Three means of extracting data are provided: certain short items of information, such as social security numbers, can be used to uniquely identify each record for quick access; records can be selected which match conditions defined by the user; and specific categories of data can be selected. Data may be displayed and analyzed in several ways which include: generating tabular information assembled from comparison of all the records on the system; generating statistical information on numeric data such as means, standard deviations and standard errors; and displaying formatted listings of output data. The MIMS program is written in Microsoft FORTRAN-77. It was designed to operate on IBM Personal Computers and compatibles running under PC or MS DOS 2.00 or higher. MIMS was developed in 1987.

  10. Comparison of high sensitivity analytical methods (PTR-MS, MIMS, GC-O, SA) and application to food chemistry

    International Nuclear Information System (INIS)

    Boscaini, E.

    2002-10-01

    Application of PTR-MS to flavor analysis and the development of the membrane introduction proton-transfer-reaction-mass-spectrometry are the main topics of this thesis. The results of classical sensory analysis and of PTR-MS analysis are compared in defining flavor profiles of 7 different brands of mozzarella cheese. The PTR-MS mass spectra of the headspace of mozzarella held at 36 o C are compared to the judge panel flavor profile. Multivariate statistical data analysis shows that the two methods perform comparable sample discrimination. This shows that PTR-MS is a very promising method for the instrumental evaluation of the flavour sensory profile of food, opening new opportunities both in the control of quality and technological processes, as well as in the fundamental comprehension of the physiological processes of aroma perception. In the same chapter is also described a method for the identification of the masses of a mass spectra obtained with PTR-MS. Although the identification is always tentative, it might suggest which substances play an important role in the classification of different products. I.e. mass 45 and 47 associated to acetaldehyde and ethanol respectively reveal a higher fermentation activity in product B than G, as expected due to their manufacture processes. Gas Chromatography-Olfactometry (GC-O) and Proton Transfer Reaction-Mass Spectrometry (PTR-MS) techniques were used to define odor active and volatile profile of three grana cheeses: Grana Padano (GP), Parmigiano Reggiano (PR) and Grana Trentino (GT). Samples for GC-O analysis were prepared by dynamic headspace extraction while a direct analysis of the headspace formed over cheese was performed by PTR-MS. Major contribution to the odor profile was given by ethyl butanoate, 2-heptanone and ethyl hexanoate with fruity notes. High concentration of mass 45 tentatively identified with acetaldehyde was found by PTR-MS analysis. Low odor threshold compounds e.g. methional and 1-octen-3-one

  11. Experimental analysis of an MIM capacitor with a concave shield

    International Nuclear Information System (INIS)

    Liu Lintao; Yu Mingyan; Wang Jinxiang

    2009-01-01

    A novel shielding scheme is developed by inserting a concave shield between a metal-insulator-metal (MIM) capacitor and the silicon substrate. Chip measurements reveal that the concave shield improves the quality factor by 11% at 11.8 GHz and 14% at 18.8 GHz compared with an unshielded MIM capacitor. It also alleviates the effect on shunt capacitance between the bottom plate of the MIM capacitor and the shield layer. Moreover, because the concave shields simplify substrate modeling, a simple circuit model of the MIM capacitor with concave shield is presented for radio frequency applications.

  12. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    International Nuclear Information System (INIS)

    Dakhel, A.A.; Jasim, Khalil E.; Cassidy, S.; Henari, F.Z.

    2013-01-01

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε ′ ∞ ≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z * (ω) and modulus M * (ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices

  13. Extraction and dielectric properties of curcuminoid films grown on Si substrate for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    Dakhel, A.A.; Jasim, Khalil E. [Department of Physics, College of Science, University of Bahrain, P.O. Box 32038 (Bahrain); Cassidy, S. [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain); Henari, F.Z., E-mail: fzhenari@rcsi-mub.com [Department of Basic Medical Sciences, Royal College of Surgeons in Ireland, Medical University of Bahrain, P.O. Box 15503 (Bahrain)

    2013-09-20

    Highlights: • The unknown insulating properties of curcuminoid extract are systematically studied. • Optical study gives a bandgap of 3.15 eV and a refractive index of 1.92 at 505 nm. • Turmeric is a high-k environmental friendly material for use in microelectronics. • Curcuminoid extract can be used as insulator of MIS devices with ε{sup ′}{sub ∞}≈54.2. -- Abstract: Curcuminoids were extracted from turmeric powder and evaporated in vacuum to prepare thin films on p-Si and glass substrates for dielectric and optical investigations. The optical absorption spectrum of the prepared amorphous film was not identical to that of the molecular one, which was identified by a strong wide absorption band in between ∼220 and 540 nm. The onset energy of the optical absorption of the film was calculated by using Hamberg et al. method. The dielectric properties of this material were systematically studied for future eco friendly applications in metal–insulator–semiconductor MIS field of applications. The complex dielectric properties were studied in the frequency range of 1–1000 kHz and was analysed in-terms of dielectric impedance Z{sup *}(ω) and modulus M{sup *}(ω). Generally, the curcuminoid complex can be considered as a high-k material and can be used in the environmental friendly production of microelectronic devices.

  14. Atomic layer deposition of crystalline SrHfO3 directly on Ge (001) for high-k dielectric applications

    International Nuclear Information System (INIS)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G.; Hu, Chengqing; Jiang, Aiting; Yu, Edward T.; Lu, Sirong; Smith, David J.; Posadas, Agham; Demkov, Alexander A.

    2015-01-01

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO 3 (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10 −5 A/cm 2 at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D it ) is estimated to be as low as ∼2 × 10 12  cm −2  eV −1 under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D it value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications

  15. [Study on biocompatibility of MIM 316L stainless steel].

    Science.gov (United States)

    Wang, Guohui; Zhu, Shaihong; Li, Yiming; Zhao, Yanzhong; Zhou, Kechao; Huang, Boyun

    2007-04-01

    This study was aimed to evaluate the biocompatibility of metal powder injection molding (MIM) 316L stainless steel. The percentage of S-period cells was detected by flow cytometry after L929 cells being incubated with extraction of MIM 316L stainless steel, and titanium implant materials for clinical application were used as control. In addition, both materials were implanted in animals and the histopathological evaluations were carried out. The statistical analyses show that there are no significant differences between the two groups (P > 0.05), which demonstrate that MIM 316L stainless steel has good biocompatibility.

  16. A formal MIM specification and tools for the common exchange of MIM diagrams: an XML-Based format, an API, and a validation method.

    Science.gov (United States)

    Luna, Augustin; Karac, Evrim I; Sunshine, Margot; Chang, Lucas; Nussinov, Ruth; Aladjem, Mirit I; Kohn, Kurt W

    2011-05-17

    The Molecular Interaction Map (MIM) notation offers a standard set of symbols and rules on their usage for the depiction of cellular signaling network diagrams. Such diagrams are essential for disseminating biological information in a concise manner. A lack of software tools for the notation restricts wider usage of the notation. Development of software is facilitated by a more detailed specification regarding software requirements than has previously existed for the MIM notation. A formal implementation of the MIM notation was developed based on a core set of previously defined glyphs. This implementation provides a detailed specification of the properties of the elements of the MIM notation. Building upon this specification, a machine-readable format is provided as a standardized mechanism for the storage and exchange of MIM diagrams. This new format is accompanied by a Java-based application programming interface to help software developers to integrate MIM support into software projects. A validation mechanism is also provided to determine whether MIM datasets are in accordance with syntax rules provided by the new specification. The work presented here provides key foundational components to promote software development for the MIM notation. These components will speed up the development of interoperable tools supporting the MIM notation and will aid in the translation of data stored in MIM diagrams to other standardized formats. Several projects utilizing this implementation of the notation are outlined herein. The MIM specification is available as an additional file to this publication. Source code, libraries, documentation, and examples are available at http://discover.nci.nih.gov/mim.

  17. Evolutionary search for new high-k dielectric materials: methodology and applications to hafnia-based oxides.

    Science.gov (United States)

    Zeng, Qingfeng; Oganov, Artem R; Lyakhov, Andriy O; Xie, Congwei; Zhang, Xiaodong; Zhang, Jin; Zhu, Qiang; Wei, Bingqing; Grigorenko, Ilya; Zhang, Litong; Cheng, Laifei

    2014-02-01

    High-k dielectric materials are important as gate oxides in microelectronics and as potential dielectrics for capacitors. In order to enable computational discovery of novel high-k dielectric materials, we propose a fitness model (energy storage density) that includes the dielectric constant, bandgap, and intrinsic breakdown field. This model, used as a fitness function in conjunction with first-principles calculations and the global optimization evolutionary algorithm USPEX, efficiently leads to practically important results. We found a number of high-fitness structures of SiO2 and HfO2, some of which correspond to known phases and some of which are new. The results allow us to propose characteristics (genes) common to high-fitness structures--these are the coordination polyhedra and their degree of distortion. Our variable-composition searches in the HfO2-SiO2 system uncovered several high-fitness states. This hybrid algorithm opens up a new avenue for discovering novel high-k dielectrics with both fixed and variable compositions, and will speed up the process of materials discovery.

  18. Modular Integrated Monitoring System (MIMS). Architecture and implementation

    International Nuclear Information System (INIS)

    Funkhouser, D.R.; Davidson, G.W.; Deland, S.M.

    1999-01-01

    The MIMS is being developed as a cost-effective means of performing safeguards in unattended remote monitoring applications. Based on industry standards and an open systems approach, the MIMS architecture supports both data acquisition and data review subsystems. Data includes images as well as discrete and analog sensor outputs. The MIMS uses an Echelon LonWorks network as a standard means and method of data acquisition from the sensor. A common data base not only stores sensor and image data but also provides a structure by which dynamic changes to the sensor system can be reflected in the data acquisition and data review subsystems without affecting the execution software. The architecture includes standards for wide area communications between data acquisition systems and data review systems. Data authentication is provided as an integral part of the design. The MIMS also provides a generic set of tools for analyzing both system behavior and observed events. The MIMS software implements this architecture by combining the use of commercial applications with a set of custom 16 and 32 bit Microsoft Windows applications which are run under Windows NT and Windows 95 operating systems. (author)

  19. New theory of effective work functions at metal/high-k dielectric interfaces : application to metal/high-k HfO2 and la2O 3 dielectric interfaces

    OpenAIRE

    Shiraishi, Kenji; Nakayama, Takashi; Akasaka, Yasushi; Miyazaki, Seiichi; Nakaoka, Takashi; Ohmori, Kenji; Ahmet, Parhat; Torii, Kazuyoshi; Watanabe, Heiji; Chikyow, Toyohiro; Nara, Yasuo; Iwai, Hiroshi; Yamada, Keisaku

    2006-01-01

    We have constructed a universal theory of the work functions at metal/high-k HfO2 and La2O3 dielectric interfaces by introducing a new concept of generalized charge neutrality levels. Our theory systematically reproduces the experimentally observed work functions of various gate metals on Hf-based high-k dielectrics, including the hitherto unpredictable behaviors of the work functions of p-metals. Our new concept provides effective guiding principles to achieving near-bandedge work functions ...

  20. Medical Information Management System (MIMS) CareWindows.

    Science.gov (United States)

    Stiphout, R. M.; Schiffman, R. M.; Christner, M. F.; Ward, R.; Purves, T. M.

    1991-01-01

    The demonstration of MIMS/CareWindows will include: (1) a review of the application environment and development history, (2) a demonstration of a very large, comprehensive clinical information system with a cost effective graphic user server and communications interface. PMID:1807755

  1. Modular Integrated Monitoring System (MIMS) - architecture and implementation

    International Nuclear Information System (INIS)

    Funkhouser, D.R.; Davidson, G.W.; Deland, S.M.

    1997-01-01

    The MIMS is being developed as a cost-effective means of performing safeguards in unattended remote monitoring applications. Based on industry standards and an open systems approach, the MIMS architecture supports both data acquisition and data review subsystems. Data includes images as well as discrete and analog sensor outputs. The MIMS uses an Echelon LonWorks network as a standard means and method of data acquisition from the sensor. A common data base not only stores sensor and image data but also provides a structure by which dynamic changes to the sensor system can be reflected in the data acquisition and data review subsystems without affecting the execution software. The architecture includes standards for wide area communications between data acquisition systems and data review systems. Data authentication is provided as an integral part of the design. The MIMS software implements this architecture by combining the use of commercial applications with a set of custom 16 and 32 bit Microsoft Windows applications which are run under Windows NT and Windows 95 operating systems

  2. Improved electrical properties after post annealing of Ba0.7Sr0.3TiO3 thin films for MIM capacitor applications

    Science.gov (United States)

    Rouahi, A.; Kahouli, A.; Sylvestre, A.; Jomni, F.; Defaÿ, E.; Yangui, B.

    2012-11-01

    Dielectric measurements have been performed on ion beam sputtering (IBS) barium strontium titanate Ba0.7Sr0.3TiO3 thin films at annealing temperatures 470 and 700 °C using impedance spectroscopy. The effect of the annealing temperature upon the electrical properties of the films is also investigated using capacitance-voltage techniques. Increasing annealing temperature suggested the increases of density and grain size, whereas the density of the trapped oxygen vacancy may be decreasing with increasing annealing temperature. The barrier height ( E a) of the oxygen vacancy decreases with increasing annealing temperature. The C- V characteristics were investigated in relation to the annealing temperature to identify the anomalous capacitance in the MIM configuration films. Among all measurement temperatures, it was observed that the data fit well by the "LGD" model. The interfacial effect and its dependence of morphology structure have been studied, and the results are discussed.

  3. Improved electrical properties after post annealing of Ba0.7Sr0.3TiO3 thin films for MIM capacitor applications

    International Nuclear Information System (INIS)

    Rouahi, A.; Kahouli, A.; Sylvestre, A.; Jomni, F.; Yangui, B.; Defay, E.

    2012-01-01

    Dielectric measurements have been performed on ion beam sputtering (IBS) barium strontium titanate Ba 0.7 Sr 0.3 TiO 3 thin films at annealing temperatures 470 and 700 C using impedance spectroscopy. The effect of the annealing temperature upon the electrical properties of the films is also investigated using capacitance-voltage techniques. Increasing annealing temperature suggested the increases of density and grain size, whereas the density of the trapped oxygen vacancy may be decreasing with increasing annealing temperature. The barrier height (E a ) of the oxygen vacancy decreases with increasing annealing temperature. The C-V characteristics were investigated in relation to the annealing temperature to identify the anomalous capacitance in the MIM configuration films. Among all measurement temperatures, it was observed that the data fit well by the ''LGD'' model. The interfacial effect and its dependence of morphology structure have been studied, and the results are discussed. (orig.)

  4. Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

    International Nuclear Information System (INIS)

    Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

    2007-01-01

    The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

  5. Metal Injection Molding (MIM of Magnesium and Its Alloys

    Directory of Open Access Journals (Sweden)

    Martin Wolff

    2016-05-01

    Full Text Available Current research has highlighted that magnesium and its alloys as biodegradable material are highly suitable for biomedical applications. The new material fully degrades into nontoxic elements and offers material properties matching those of human bone tissue. As biomedical implants are rather small and complex in shape, the metal injection molding (MIM technique seems to be well suited for the near net shape mass production of such parts. Furthermore, MIM of Mg-alloys is of high interest in further technical fields. This study focusses on the performance of MIM-processing of magnesium alloy powders. It includes Mg-specific development of powder blending, feedstock preparation, injection molding, solvent and thermal debinding and final sintering. Even though Mg is a highly oxygen-affine material forming a stable oxide layer on each particle surface, the material can be sintered to nearly dense parts, providing mechanical properties matching those of as cast material. An ultimate tensile strength of 142 MPa, yield strength of 67 MPa, elastic modulus of 40 GPa and 8% elongation at fracture could be achieved using novel organic polymer binders for the feedstock preparation. Thus, first implant demonstrator parts could be successfully produced by the MIM technique.

  6. Atomic layer deposition of crystalline SrHfO{sub 3} directly on Ge (001) for high-k dielectric applications

    Energy Technology Data Exchange (ETDEWEB)

    McDaniel, Martin D.; Ngo, Thong Q.; Ekerdt, John G., E-mail: ekerdt@utexas.edu [Department of Chemical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States); Hu, Chengqing; Jiang, Aiting; Yu, Edward T. [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Lu, Sirong; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287 (United States); Posadas, Agham; Demkov, Alexander A. [Department of Physics, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-02-07

    The current work explores the crystalline perovskite oxide, strontium hafnate, as a potential high-k gate dielectric for Ge-based transistors. SrHfO{sub 3} (SHO) is grown directly on Ge by atomic layer deposition and becomes crystalline with epitaxial registry after post-deposition vacuum annealing at ∼700 °C for 5 min. The 2 × 1 reconstructed, clean Ge (001) surface is a necessary template to achieve crystalline films upon annealing. The SHO films exhibit excellent crystallinity, as shown by x-ray diffraction and transmission electron microscopy. The SHO films have favorable electronic properties for consideration as a high-k gate dielectric on Ge, with satisfactory band offsets (>2 eV), low leakage current (<10{sup −5} A/cm{sup 2} at an applied field of 1 MV/cm) at an equivalent oxide thickness of 1 nm, and a reasonable dielectric constant (k ∼ 18). The interface trap density (D{sub it}) is estimated to be as low as ∼2 × 10{sup 12 }cm{sup −2 }eV{sup −1} under the current growth and anneal conditions. Some interfacial reaction is observed between SHO and Ge at temperatures above ∼650 °C, which may contribute to increased D{sub it} value. This study confirms the potential for crystalline oxides grown directly on Ge by atomic layer deposition for advanced electronic applications.

  7. MIM Holdings Limited 1984 annual report

    Energy Technology Data Exchange (ETDEWEB)

    1984-01-01

    M.I.M. Holdings Limited is a major mining and mineral processing company formed in 1970. The group traces its origins to 1924 following the discovery of silver lead zinc started in 1931 and parallel production of silver lead zinc ore at Mount Isa the previous year. Today the MIM group is a diversified mineral, coal and metal producing and marketing organisation. Details of the company's principal activities over the last year, and accounts and management information for the last year are presented.

  8. Ammonia synthesis using magnetic induction method (MIM)

    Science.gov (United States)

    Puspitasari, P.; Razak, J. Abd; Yahya, N.

    2012-09-01

    The most challenging issues for ammonia synthesis is to get the high yield. New approach of ammonia synthesis by using Magnetic Induction Method (MIM) and the Helmholtz Coils has been proposed. The ammonia detection was done by using Kjeldahl Method and FTIR. The system was designed by using Autocad software. The magnetic field of MIM was vary from 100mT-200mT and the magnetic field for the Helmholtz coils was 14mT. The FTIR result shows that ammonia has been successfully formed at stretching peaks 1097,1119,1162,1236, 1377, and 1464 cm-1. UV-VIS result shows the ammonia bond at 195nm of wavelength. The ammonia yield was increase to 244.72μmole/g.h by using the MIM and six pairs of Helmholtz coils. Therefore this new method will be a new promising method to achieve the high yield ammonia at ambient condition (at 25δC and 1atm), under the Magnetic Induction Method (MIM).

  9. MIMS circuit scrapbook V.I.

    CERN Document Server

    Mims, Forrest

    2000-01-01

    Here it is--a collection of Forrest Mims's classic work from the original Popular Electronics magazine! Using commonly available components and remarkable ingenuity, Forrest shows you how to build and experiment with circuits like these:analog computers color organs digital phase-locked loops frequency-to-voltage and voltage-to-frequency converters interval timers LED oscilloscopes light wave communicators magnetic field sensors optoelectronics pseudorandom number generators tone sequencers and much, much, more!

  10. X-ray computed microtomography studies of MIM and DPR parts

    CSIR Research Space (South Africa)

    Muchavi, Noluntu S

    2016-10-01

    Full Text Available the wider or longer strips into small sections, thus requiring a large number of scans. AcknowledgementsS The contributions of Ntate Sam Papo, Mandy Seerane, Hilda Chikwanda and Pierre Rossouw are duly recognized. This work is funded by the DST and the CSIR... Metal injection moulding (MIM) is a novel process, which combines the advantages of powder metallurgy (PM) and plastic injection moulding. MIM has found widespread applications in the cost-effective production of high-sintered density small parts...

  11. Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

    Science.gov (United States)

    Kakushima, K.; Okamoto, K.; Tachi, K.; Song, J.; Sato, S.; Kawanago, T.; Tsutsui, K.; Sugii, N.; Ahmet, P.; Hattori, T.; Iwai, H.

    2008-11-01

    Band bendings of Si substrates have been observed using hard x-ray photoemission spectroscopy. With a capability of collecting photoelectrons generated as deep as 40 nm, the binding energy shift in a core level caused by the potential profile at the surface of the substrate results in a spectrum broadening. The broadening is found to be significant when heavily doped substrates are used owing to its steep potential profile. The surface potential of the substrate can be obtained by deconvolution of the spectrum. This method has been applied to observe the band bending profile of metal-oxide-semiconductor capacitors with high-k gate dielectrics. By comparing the band bending profiles of heavily-doped n+- and p+-Si substrates, the interface dipoles presented at interfaces can be estimated. In the case of W gated La2O3/La-silicate capacitor, an interface dipole to shift the potential of -0.45 V has been estimated at La-silicate/Si interface, which effectively reduces the apparent work function of W. On the other hand, an interface dipole of 0.03-0.07 V has been found to exist at Hf-silicate/SiO2 interface for W gated HfO2/Hf-silicate/SiO2 capacitor.

  12. Properties of zirconium silicate and zirconium-silicon oxynitride high-k dielectric alloys for advanced microelectronic applications: Chemical and electrical characterizations

    Science.gov (United States)

    Ju, Byongsun

    2005-11-01

    As the microelectronic devices are aggressively scaled down to the 1999 International Technology Roadmap, the advanced complementary metal oxide semiconductor (CMOS) is required to increase packing density of ultra-large scale integrated circuits (ULSI). High-k alternative dielectrics can provide the required levels of EOT for device scaling at larger physical thickness, thereby providing a materials pathway for reducing the tunneling current. Zr silicates and its end members (SiO2 and ZrO2) and Zr-Si oxynitride films, (ZrO2)x(Si3N 4)y(SiO2)z, have been deposited using a remote plasma-enhanced chemical vapor deposition (RPECVD) system. After deposition of Zr silicate, the films were exposed to He/N2 plasma to incorporate nitrogen atoms into the surface of films. The amount of incorporated nitrogen atoms was measured by on-line Auger electron spectrometry (AES) as a function of silicate composition and showed its local minimum around the 30% silicate. The effect of nitrogen atoms on capacitance-voltage (C-V) and leakage-voltage (J-V) were also investigated by fabricating metal-oxide-semiconductor (MOS) capacitors. Results suggested that incorporating nitrogen into silicate decreased the leakage current in SiO2-rich silicate, whereas the leakage increased in the middle range of silicate. Zr-Si oxynitride was a pseudo-ternary alloy and no phase separation was detected by x-ray photoelectron spectroscopy (XPS) analysis up to 1100°C annealing. The leakage current of Zr-Si oxynitride films showed two different temperature dependent activation energies, 0.02 eV for low temperature and 0.3 eV for high temperature. Poole-Frenkel emission was the dominant leakage mechanism. Zr silicate alloys with no Si3N4 phase were chemically separated into the SiO2 and ZrO2 phase as annealed above 900°C. While chemical phase separation in Zr silicate films with Si 3N4 phase (Zr-Si oxynitride) were suppressed as increasing the amount of Si3N4 phase due to the narrow bonding network m Si3

  13. Giant Magnetic Field Enhancement in Hybridized MIM Structures

    KAUST Repository

    Alrasheed, Salma; Di Fabrizio, Enzo M.

    2017-01-01

    We propose numerically an approach to narrow the plasmon linewidth and enhance the magnetic near field intensity at a magnetic hot spot in a hybridized metal-insulatormetal (MIM) structure. First we insert in part of the dielectric layer of the MIM

  14. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    International Nuclear Information System (INIS)

    Cao Yu; Li Xiangyou; Zeng Xiaoyan

    2008-01-01

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated

  15. Frequency characteristics of the MIM thick film capacitors fabricated by laser micro-cladding electronic pastes

    Energy Technology Data Exchange (ETDEWEB)

    Cao Yu; Li Xiangyou [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China); Zeng Xiaoyan [Wuhan National Laboratory for Optoelectronics, Huazhong University of Sci and Tech, 430074 Wuhan, Hubei (China)], E-mail: xyzeng@mail.hust.edu.cn

    2008-05-25

    With rapid development of the electronic industry, how to respond the market requests quickly, shorten R and D prototyping fabrication period, and reduce the cost of the electronic devices have become a challenge work, which need flexible manufacturing methods. In this work, two direct write processing methods, direct material deposition by microPen and Nd:YAG laser micro-cladding, are integrated with CAD/CAM technology for the hybrid fabrication of passive electronic components. Especially, the metal-insulator-metal (MIM) type thick film capacitors are fabricated on ceramic substrates by this method. A basic two-step procedure of laser micro-cladding electronic pastes (LMCEPs) process for the thick film pattern preparation is presented. For a better understanding of the MIM thick film capacitor characterization, equivalent circuit models at low-frequency and high-frequency domains are introduced, respectively. The frequency characteristics tests up to 1.8 GHz of capacitance stability, equivalent series resistance (ESR), equivalent series inductance (ESL) and impendence are performed, and the results show good DC voltage stability (<2.48%), good frequency stability (<2.6%) and low dissipation factor (<0.6%) of the MIM thick film capacitors, which may get application to megahertz regions. The further developments of the LMCEP process for fabricating MIM thick film capacitors are also investigated.

  16. Multiple Fano-Like MIM Plasmonic Structure Based on Triangular Resonator for Refractive Index Sensing

    OpenAIRE

    Jankovic, Nikolina; Cselyuszka, Norbert

    2018-01-01

    In this paper, we present a Fano metal-insulator-metal (MIM) structure based on an isosceles triangular cavity resonator for refractive index sensing applications. Due to the specific feeding scheme and asymmetry introduced in the triangular cavity, the resonator exhibits four sharp Fano-like resonances. The behavior of the structure is analyzed in detail and its sensing capabilities demonstrated through the responses for various refractive indices. The results show that the sensor has very g...

  17. An Automated Medical Information Management System (OpScan-MIMS) in a Clinical Setting

    Science.gov (United States)

    Margolis, S.; Baker, T.G.; Ritchey, M.G.; Alterescu, S.; Friedman, C.

    1981-01-01

    This paper describes an automated medical information management system within a clinic setting. The system includes an optically scanned data entry system (OpScan), a generalized, interactive retrieval and storage software system(Medical Information Management System, MIMS) and the use of time-sharing. The system has the advantages of minimal hardware purchase and maintenance, rapid data entry and retrieval, user-created programs, no need for user knowledge of computer language or technology and is cost effective. The OpScan-MIMS system has been operational for approximately 16 months in a sexually transmitted disease clinic. The system's application to medical audit, quality assurance, clinic management and clinical training are demonstrated.

  18. Improved electrical properties after post annealing of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films for MIM capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A.; Kahouli, A. [University of Grenoble (UJF), Grenoble Electrical Engineering Laboratory (G2ELab), CNRS, 25 Rue de Martyrs, BP166, Grenoble Cedex 9 (France); Campus Universities, Laboratory of Materials, Organization and Properties (LMOP), Tunis (Tunisia); Sylvestre, A. [University of Grenoble (UJF), Grenoble Electrical Engineering Laboratory (G2ELab), CNRS, 25 Rue de Martyrs, BP166, Grenoble Cedex 9 (France); Jomni, F.; Yangui, B. [Campus Universities, Laboratory of Materials, Organization and Properties (LMOP), Tunis (Tunisia); Defay, E. [CEA-LETI, Minatec Campus, Grenoble Cedex 7 (France)

    2012-11-15

    Dielectric measurements have been performed on ion beam sputtering (IBS) barium strontium titanate Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films at annealing temperatures 470 and 700 C using impedance spectroscopy. The effect of the annealing temperature upon the electrical properties of the films is also investigated using capacitance-voltage techniques. Increasing annealing temperature suggested the increases of density and grain size, whereas the density of the trapped oxygen vacancy may be decreasing with increasing annealing temperature. The barrier height (E{sub a}) of the oxygen vacancy decreases with increasing annealing temperature. The C-V characteristics were investigated in relation to the annealing temperature to identify the anomalous capacitance in the MIM configuration films. Among all measurement temperatures, it was observed that the data fit well by the ''LGD'' model. The interfacial effect and its dependence of morphology structure have been studied, and the results are discussed. (orig.)

  19. The Educational Affordances of Mobile Instant Messaging (MIM): Results of Whatsapp® Used in Higher Education

    Science.gov (United States)

    Klein, Amarolinda Zanela; da Silva Freitas, José Carlos, Jr.; da Silva, Juliana Vitória Vieira Mattiello Mattiello; Barbosa, Jorge Luis Victória; Baldasso, Lucas

    2018-01-01

    The popularity of Mobile Instant Messaging (MIM) has prompted educators to integrate it in teaching and learning in higher education. WhatsApp® is a multi-platform instant messaging application widely used worldwide, however, there is still little applied research on its use as a platform for educational activities in management higher education.…

  20. Giant Magnetic Field Enhancement in Hybridized MIM Structures

    KAUST Repository

    Alrasheed, Salma

    2017-10-23

    We propose numerically an approach to narrow the plasmon linewidth and enhance the magnetic near field intensity at a magnetic hot spot in a hybridized metal-insulatormetal (MIM) structure. First we insert in part of the dielectric layer of the MIM, at its center, another dielectric material of a high refractive index (HRI). This results in an increase in the magnetic near field enhancement of the magnetic plasmon (MP) resonance by 82% compared with the MIM without the HRI material. We then couple this enhanced MP resonance to a propagating surface plasmon polariton (SPP) to achieve a further enhancement of 438%. The strong coupling between the MP and the SPP is demonstrated by the large anti-crossing in the reflection spectra. The resulting maximum magnetic field enhancement at the gap is ~ |H / Hi|² = 3555.

  1. Metal Injection Molding (MIM) of NdFeB Magnets

    OpenAIRE

    Hartwig T.; Lopes L.; Wendhausen P.; Ünal N.

    2014-01-01

    Due to the increased and unstable prices for Rare Earth elements there are activities to develop alternative hard magnetic materials. Reducing the amount of material necessary to produce complex sintered NdFeB magnets can also help to reduce some of the supply problem. Metal Injection Molding (MIM) is able to produce near net shape parts and can reduce the amount of finishing to achieve final geometry. Although MIM of NdFeB has been patented and published fairly soon after the development of ...

  2. High-k materials in the electrolyte/insulator/silicon configuration. Characterization and application in bio-electronics; Hoch-k-Materialien in der Elektrolyt/Isolator/Silizium-Konfiguration. Charakterisierung und Anwendung in der Bioelektronik

    Energy Technology Data Exchange (ETDEWEB)

    Wallrapp, F

    2006-12-19

    In order to elicit action potentials in nerve cells adhered on electrodes, a certain current is required across the electrode. Electrochemical reactions may cause damage to cells and electrodes. This is evaded by using silicon electrodes which are insulated by a dielectric. In doing so, only capacitive current is flowing, and electrochemical are avoided. The aim of this work was to fabricate novel stimulation chips exhibiting an enhanced capacitance which render new biological applications possible. These chips were to be characterized and used for the stimulation of cells. The formerly used dielectric SiO{sub 2} was replaced by HfO{sub 2} and TiO{sub 2}, with both of them featuring a higher dielectric constant. They were deposited on the silicon substrate by ALD (atomic layer deposition). The chips were characterized in the electrolyte/insulator/semiconductor (EIS) configuration. Owing to the low leakage current of the EIS configuration, the characterization of the high-k materials was possible in more detail as compared to using a metallic top contact (MIS configuration). The voltage-dependent capacitances of the HfO{sub 2} films could be interpreted by means of a common metal/SiO{sub 2}/silicon system. In contrast, the TiO{sub 2} films exhibited interesting properties which could only be rationalized with the help of numerical calculations assuming free electrons in the TiO{sub 2}. The low-lying conduction band of TiO{sub 2} caused accumulation of electrons within the TiO{sub 2} for certain voltages, which led to an enhanced capacitance. The effects of high voltages, frequency, film thickness and interlayer composition were examined and brought into compliance with the model. The novel TiO{sub 2} stimulation devices featured a five-fold capacitance increase as compared to former SiO{sub 2} chips. Using them, two fundamental stimulation mechanisms were induced in HEK293 cells expressing the recombinant potassium channel Kv1.3: Opening of ion channels and

  3. Metal Injection Molding (MIM of NdFeB Magnets

    Directory of Open Access Journals (Sweden)

    Hartwig T.

    2014-07-01

    Full Text Available Due to the increased and unstable prices for Rare Earth elements there are activities to develop alternative hard magnetic materials. Reducing the amount of material necessary to produce complex sintered NdFeB magnets can also help to reduce some of the supply problem. Metal Injection Molding (MIM is able to produce near net shape parts and can reduce the amount of finishing to achieve final geometry. Although MIM of NdFeB has been patented and published fairly soon after the development of the NdFeB magnets there has never been an industrial production. This could be due to the fact that MIM was very young at that time and hardly developed. Thus, the feasibility of the process needs to be revaluated. This paper presents results of our work on determining the process parameters influencing the magnetic properties of the sintered magnets as well as the shrinkage during processing. The role of binder and powder loading on the alignment of the particles as well as on the carbon and oxygen contamination was examined.

  4. Parameter Optimization Of Natural Hydroxyapatite/SS316l Via Metal Injection Molding (MIM)

    Science.gov (United States)

    Mustafa, N.; Ibrahim1, M. H. I.; Amin, A. M.; Asmawi, R.

    2017-01-01

    Metal injection molding (MIM) are well known as a worldwide application of powder injection molding (PIM) where as applied the shaping concept and the beneficial of plastic injection molding but develops the applications to various high performance metals and alloys, plus metal matrix composites and ceramics. This study investigates the strength of green part by using stainless steel 316L/ Natural hydroxyapatite composite as a feedstock. Stainless steel 316L (SS316L) was mixed with Natural hydroxyapatite (NHAP) by adding 40 wt. % Low Density Polyethylene and 60 %wt. Palm Stearin as a binder system at 63 wt. % powder loading consist of 90 % wt. of SS316 L and 10 wt. % NHAP prepared thru critical powder volume percentage (CPVC). Taguchi method was functional as a tool in determining the optimum green strength for Metal Injection Molding (MIM) parameters. The green strength was optimized with 4 significant injection parameter such as Injection temperature (A), Mold temperature (B), Pressure (C) and Speed (D) were selected throughout screening process. An orthogonal array of L9 (3)4 was conducted. The optimum injection parameters for highest green strength were established at A1, B2, C0 and D1 and where as calculated based on Signal to Noise Ratio.

  5. Microstructure and chemical analysis of Hf-based high-k dielectric layers in metal-insulator-metal capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Thangadurai, P. [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Mikhelashvili, V.; Eisenstein, G. [Department of Electrical Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel); Kaplan, W.D., E-mail: kaplan@tx.technion.ac.i [Department of Materials Engineering, Technion - Israel Institute of Technology, Haifa 32000 (Israel)

    2010-05-31

    The microstructure and chemistry of the high-k gate dielectric significantly influences the performance of metal-insulator-metal (MIM) and metal-oxide-semiconductor devices. In particular, the local structure, chemistry, and inter-layer mixing are important phenomena to be understood. In the present study, high resolution and analytical transmission electron microscopy are combined to study the local structure, morphology, and chemistry in MIM capacitors containing a Hf-based high-k dielectric. The gate dielectric, bottom and gate electrodes were deposited on p-type Si(100) wafers by electron beam evaporation. Four chemically distinguishable sub-layers were identified within the dielectric stack. One is an unintentionally formed 4.0 nm thick interfacial layer of Ta{sub 2}O{sub 5} at the interface between the Ta electrode and the dielectric. The other three layers are based on HfN{sub x}O{sub y} and HfTiO{sub y}, and intermixing between the nearby sub-layers including deposited SiO{sub 2}. Hf-rich clusters were found in the HfN{sub x}O{sub y} layer adjacent to the Ta{sub 2}O{sub 5} layer.

  6. Effects of annealing temperature on the characteristics of ALD-deposited HfO2 in MIM capacitors

    International Nuclear Information System (INIS)

    Jeong, S.-W.; Lee, H.J.; Kim, K.S.; You, M.T.; Roh, Y.; Noguchi, T.; Xianyu, W.; Jung, J.

    2006-01-01

    We have investigated the annealing effects of HfO 2 films deposited by an atomic layer deposition (ALD) method on the electrical and physical properties in the Si/SiO 2 /Pt/ALD-HfO 2 /Pd metal-insulator-metal (MIM) capacitors. If the annealing temperature for HfO 2 films was restricted below 500 deg. C, an annealing step using a rapid thermal processor (RTP) improves the electrical properties such as the dissipation factor and the dielectric constant. On the other hand, annealing at 700 deg. C degrades the electrical characteristics in general; the dissipation factor increases over the frequency range of 1∼4 MHz, and the leakage current increases up to 2 orders at the low electric field regions. We found that the degradation of electrical properties is due to the grain growth in the HfO 2 film (i.e., poly-crystallization of the film) by the high temperature annealing processing. We suggested that the annealing temperature must be restricted below 500 deg. C to obtain the high quality high-k film for the MIM capacitors

  7. Tunable Fano Resonance in Asymmetric MIM Waveguide Structure.

    Science.gov (United States)

    Zhao, Xuefeng; Zhang, Zhidong; Yan, Shubin

    2017-06-25

    A plasmonic waveguide coupled system that uses a metal-insulator-metal (MIM) waveguide with two silver baffles and a coupled ring cavity is proposed in this study. The transmission properties of the plasmonic system were investigated using the finite element method. The simulation results show a Fano profile in the transmission spectrum, which was caused by the interaction of the broadband resonance of the Fabry-Perot (F-P) cavity and the narrow band resonance of the ring cavity. The Fabry-Perot (F-P) cavity in this case was formed by two silver baffles dividing the MIM waveguide. The maximum sensitivity of 718 nm/RIU and the maximum figure of merit of 4354 were achieved. Furthermore, the effects of the structural parameters of the F-P cavity and the ring cavity on the transmission properties of the plasmonic system were analyzed. The results can provide a guide for designing highly sensitive on-chip sensors based on surface plasmon polaritons.

  8. Multiple Fano-Like MIM Plasmonic Structure Based on Triangular Resonator for Refractive Index Sensing.

    Science.gov (United States)

    Jankovic, Nikolina; Cselyuszka, Norbert

    2018-01-19

    In this paper, we present a Fano metal-insulator-metal (MIM) structure based on an isosceles triangular cavity resonator for refractive index sensing applications. Due to the specific feeding scheme and asymmetry introduced in the triangular cavity, the resonator exhibits four sharp Fano-like resonances. The behavior of the structure is analyzed in detail and its sensing capabilities demonstrated through the responses for various refractive indices. The results show that the sensor has very good sensitivity and maximal figure of merit (FOM) value of 3.2 × 10⁵. In comparison to other similar sensors, the proposed one has comparable sensitivity and significantly higher FOM, which clearly demonstrates its high sensing potential.

  9. High-K Strategy Scale: A Measure of the High-K Independent Criterion of Fitness

    Directory of Open Access Journals (Sweden)

    Cezar Giosan

    2006-01-01

    Full Text Available The present study aimed at testing whether factors documented in the literature as being indicators of a high-K reproductive strategy have effects on fitness in extant humans. A 26-item High-K Strategy Scale comprising these factors was developed and tested on 250 respondents. Items tapping into health and attractiveness, upward mobility, social capital and risks consideration, were included in the scale. As expected, the scale showed a significant correlation with perceived offspring quality and a weak, but significant association with actual number of children. The scale had a high reliability coefficient (Cronbach's Alpha = .92. Expected correlations were found between the scale and number of medical diagnoses, education, perceived social support, and number of previous marriages, strengthening the scale's construct validity. Implications of the results are discussed.

  10. MIM, a Potential Metastasis Suppressor Gene in Bladder Cancer

    Directory of Open Access Journals (Sweden)

    Young-Goo Lee

    2002-01-01

    Full Text Available Using a modified version of the mRNA differential display technique, five human bladder cancer cell lines from low grade to metastatic were analyzed to identify differences in gene expression. A 316-bp cDNA (C11300 was isolated that was not expressed in the metastatic cell line TccSuP. Sequence analysis revealed that this gene was identical to KIAA 0429, has a 5.3-kb transcript that mapped to 8824.1. The protein is predicted to be 356 amino acids in size and has an actin-binding WH2 domain. Northern blot revealed expression in multiple normal tissues, but none in a metastatic breast cancer cell line (SKBR3 or in metastatic prostatic cancer cell lines (LNCaP, PC3. We have named this gene Missing in Metastasis (MIM and our data suggest that it may be involved in cytoskeletal organization.

  11. Interactions between ionic liquid surfactant [C12mim]Br and DNA in dilute brine.

    Science.gov (United States)

    He, Yunfei; Shang, Yazhuo; Liu, Zhenhai; Shao, Shuang; Liu, Honglai; Hu, Ying

    2013-01-01

    Interactions between ionic liquid surfactant [C(12)mim]Br and DNA in dilute brine were investigated in terms of various experimental methods and molecular dynamics (MD) simulation. It was shown that the aggregation of [C(12)mim]Br on DNA chains is motivated not only by electrostatic attractions between DNA phosphate groups and [C(12)mim]Br headgroups but also by hydrophobic interactions among [C(12)mim]Br alkyl chains. Isothermal titration calorimetry analysis indicated that the [C(12)mim]Br aggregation in the presence and absence of DNA are both thermodynamically favored driven by enthalpy and entropy. DNA undergoes size transition and conformational change induced by [C(12)mim]Br, and the charges of DNA are neutralized by the added [C(12)mim]Br. Various microstructures were observed such as DNA with loose coil conformation in nature state, necklace-like structures, and compact spherical aggregates. MD simulation showed that the polyelectrolyte collapses upon the addition of oppositely charged surfactants and the aggregation of surfactants around the polyelectrolyte was reaffirmed. The simulation predicted the gradual neutralization of the negatively charged polyelectrolyte by the surfactant, consistent with the experimental results. Copyright © 2012 Elsevier B.V. All rights reserved.

  12. Interaction of pepsin-[C16mim]Br system: interfacial dilational rheology and conformational studies.

    Science.gov (United States)

    Huang, Tian; Cao, Chong; Liu, Zi-lin; Li, Yang; Du, Feng-pei

    2014-09-21

    The interfacial rheological property is closely related to the stabilities of foams and emulsions, yet there have been limited studies on the interaction between proteins with ionic liquid-type imidazolium surfactants at the decane-water interface as well as in the bulk. Herein, we investigated the interfacial and bulk properties of pepsin (PEP) and an ionic liquid (IL), 1-hexadecyl-3-methylimidazolium bromide, [C(16)mim]Br. The interfacial pressure and dilational rheology studies were performed to describe the formation of [C(16)mim]Br-pepsin complexes. The influence of the oscillating frequency and the bulk concentration of [C(16)mim]Br on the dilational properties were explored. The conformational changes were studied by monitoring the fluorescence and far UV-CD spectra. The results reveal that the globular structure of pepsin is one of the decisive factors controlling the nature of the interfacial film. The monotonous increase in the dilational elastic modulus of pepsin-[C(16)mim]Br solutions with the surface age indicates that no loops and tails had formed. Interestingly, with an increase in the concentration of [C(16)mim]Br, the εd-c curve first passes through a plateau value due to steric hindrance and the electrostatic barrier of already absorbed tenacious pepsin-[C(16)mim]Br complexes. With the further addition of [C(16)mim]Br, the remarkable decrease in dilational elastic modulus indicates that the compact structure is destroyed gradually. The results of the fluorescence spectra and far UV-CD spectra confirm that [C(16)mim]Br did not produce perceptible changes in pepsin at the concentrations studied in the dilational experiment. Possible schematic programs of the pepsin-[C(16)mim]Br interaction model at the interface and in bulk phase are proposed.

  13. Investigation of high- k yttrium copper titanate thin films as alternative gate dielectrics

    International Nuclear Information System (INIS)

    Monteduro, Anna Grazia; Ameer, Zoobia; Rizzato, Silvia; Martino, Maurizio; Caricato, Anna Paola; Maruccio, Giuseppe; Tasco, Vittorianna; Lekshmi, Indira Chaitanya; Hazarika, Abhijit; Choudhury, Debraj; Sarma, D D

    2016-01-01

    Nearly amorphous high- k yttrium copper titanate thin films deposited by laser ablation were investigated in both metal–oxide–semiconductor (MOS) and metal–insulator–metal (MIM) junctions in order to assess the potentialities of this material as a gate oxide. The trend of dielectric parameters with film deposition shows a wide tunability for the dielectric constant and AC conductivity, with a remarkably high dielectric constant value of up to 95 for the thick films and conductivity as low as 6  ×  10 −10 S cm −1 for the thin films deposited at high oxygen pressure. The AC conductivity analysis points out a decrease in the conductivity, indicating the formation of a blocking interface layer, probably due to partial oxidation of the thin films during cool-down in an oxygen atmosphere. Topography and surface potential characterizations highlight differences in the thin film microstructure as a function of the deposition conditions; these differences seem to affect their electrical properties. (paper)

  14. Ultra-narrow band perfect absorbers based on Fano resonance in MIM metamaterials

    Science.gov (United States)

    Zhang, Ming; Fang, Jiawen; Zhang, Fei; Chen, Junyan; Yu, Honglin

    2017-12-01

    Metallic nanostructures have attracted numerous attentions in the past decades due to their attractive plasmonic properties. Resonant plasmonic perfect absorbers have promising applications in a wide range of technologies including photothermal therapy, thermophotovoltaics, heat-assisted magnetic recording and biosensing. However, it remains to be a great challenge to achieve ultra-narrow band in near-infrared band with plasmonic materials due to the large optical losses in metals. In this letter, we introduced Fano resonance in MIM metamaterials composed of an asymmetry double elliptic cylinders (ADEC), which can achieve ultra-narrow band perfect absorbers. In theoretical calculations, we observed an ultranarrow band resonant absorption peak with the full width at half maximum (FWHM) of 8 nm and absorption amplitude exceeding 99% at 930 nm. Moreover, we demonstrate that the absorption increases with the increase of asymmetry and the absorption resonant wavelength can be tuned by changing the size and arrangement of the unit cell. The asymmetry metallic nanostructure also exhibit a higher refractive sensitivity as large as 503 nm/RIU with high figure of merit of 63, which is promising for high sensitive sensors. Results of this work are desirable for various potential applications in micro-technological structures such as biological sensors, narrowband emission, photodetectors and solar thermophotovoltaic (STPV) cells.

  15. Characterization of the Failure Site Distribution in MIM Devices Using Zoomed Wavelet Analysis

    Science.gov (United States)

    Muñoz-Gorriz, J.; Monaghan, S.; Cherkaoui, K.; Suñé, J.; Hurley, P. K.; Miranda, E.

    2018-05-01

    The angular wavelet analysis is applied to the study of the spatial distribution of breakdown (BD) spots in Pt/HfO2/Pt capacitors with square and circular areas. The method is originally developed for rectangular areas, so a zoomed approach needs to be considered when the observation window does not coincide with the device area. The BD spots appear as a consequence of the application of electrical stress to the device. The stress generates defects within the dielectric film, a process that ends with the formation of a percolation path between the electrodes and the melting of the top metal layer because of the high release of energy. The BD spots have lateral sizes ranging from 1 μm to 3 μm and they appear as a point pattern that can be studied using spatial statistics methods. In this paper, we report the application of the angular wavelet method as a complementary tool for the analysis of the distribution of failure sites in large-area metal-insulator-metal (MIM) devices. The differences between considering a continuous or a discrete wavelet and the role played by the number of BD spots are also investigated.

  16. Investigation of capacitance characteristics in metal/high-k ...

    Indian Academy of Sciences (India)

    MS received 4 May 2016; accepted 10 January 2017; published online 21 August 2017. Abstract. Capacitance vs. ... with high-k materials is the prime technological challenge. [2]. ... reliability of MOS devices are strongly dependent on the for-.

  17. Chronic effects of the ionic liquid [C4mim][Cl] towards the microalga Scenedesmus quadricauda

    International Nuclear Information System (INIS)

    Deng, Yun; Beadham, Ian; Wu, Jie; Chen, Xiao-Di; Hu, Lan; Gu, Jun

    2015-01-01

    Chronic effects of the ionic liquid [C 4 mim][Cl] (mp 73 °C) towards the microalga, Scenedesmus quadricauda were studied by flow cytometry, monitoring multiple endpoints of cell density, esterase activity, membrane integrity, reactive oxygen species and chlorophyll fluorescence. Toxicity was clearly in evidence, and although increased esterase activity indicated hormesis during initial exposure to [C 4 mim][Cl], inhibition of both esterase activity and chlorophyll fluorescence became apparent after 3 days. Cell density was also decreased by culturing with [C 4 mim][Cl], but this effect was clearly concentration-dependent and only became significant during the second half of the experiment. In contrast, [C 4 mim][Cl] had only a modest effect on reactive oxygen species (ROS) and caused little damage to cell membranes. - Highlights: • Use of an advanced biological technique, flow cytometry, to elucidate ionic liquid toxicity. • Chronic effects of ionic liquid. • Membrane integrity and ROS studied. • Mechanism of ionic liquid toxicity. - [C 4 mim][Cl] significantly inhibited esterase activity, chlorophyll fluorescence and cell density, having only a modest effect on reactive oxygen species and cell membranes

  18. Radiation-induced darkening of ionic liquid [C4mim][NTf2] and its decoloration

    International Nuclear Information System (INIS)

    Yuan Liyong; Peng Jing; Xu Ling; Zhai Maolin; Li Jiuqiang; Wei Genshuan

    2009-01-01

    The radiation effect on a hydrophobic room-temperature ionic liquid (RTIL), 1-butyl-3-methyl-imidazolium bis[(trifluoromethyl)sulfonyl]imide ([C 4 mim][NTf 2 ]), was studied by γ-irradiation under nitrogen atmosphere. Accompanied by color darkening and increase of light absorbance in a wide wavelength range, a distinct absorption peak at around 290 nm for irradiated [C 4 mim][NTf 2 ] appeared when acetonitrile was used as solvent, and the intensity of the peak enhanced with increasing dose. The spectrophotometric study on the irradiated RTILs containing 1,3-dialkylimidazolium cations associated with different inorganic anions revealed that the peak is ascribed to the radiolysis products of the [C 4 mim] + . And the wavelength of the peak was affected by alkyl chain length on imidazolium cation, while the intensity of the peak was influenced by anions. With incorporating a little amounts of oxidants, such as KMnO 4 and HNO 3 into irradiated [C 4 mim][NTf 2 ], the intensity of the peak at 290 nm decreased obviously and the decoloration of [C 4 mim][NTf 2 ] occurred, suggesting that the peak at 290 nm is assigned to the colored species and the species can be oxidized.

  19. Improvement of magnetic properties of Fe-50mass%Ni in MIM process; MIM process ni okeru Fe-50mass%Ni no jiki tokusei kaizen

    Energy Technology Data Exchange (ETDEWEB)

    Miura, H. [Kumamoto University, Kumamoto (Japan). Faculty of Engineering; Fujita, S. [Kumamoto University, Kumamoto (Japan); Fujita, M.; Ninomiya, R. [Mitsuikinzoku Co. Ltd., Tokyo (Japan)

    2000-12-15

    Metal injection molding (MIM) process is hoped to be one of processing for required to more complicated parts of magnetic components. In this study, the effect of different types of powders (prealloyed and mixed elemental powders) on the magnetic properties of permalloy (Fe-50mass%Ni) through the MIM technique was investigated. Approximately 94% of theoretical density was obtained by using the prealloyed powder, and the retained carbon and oxygen contents were controlled to be low. On the other hand, 96% of theoretical density was obtained by using the mixed elemental powder, but the magnetic properties were inferior to that of prealloyed powder's because of high retained oxygen content. By using the carbonyl Fe powder with high carbon, the retained oxygen and carbon content could be controlled to be low, resulting in the improved magnetic properties. (author)

  20. Metastable Innershell Molecular State (MIMS II: K-shell X-ray satellites in heavy ion impact on solids

    Directory of Open Access Journals (Sweden)

    Young K. Bae

    2014-01-01

    Full Text Available Metastable Innershell Molecular State (MIMS, an innershell-bound ultra-high-energy molecule, was previously proposed to explain a ∼40% efficiency of soft-X-ray generation in ∼0.05 keV/amu nanoparticle impact on solids. Here, the MIMS model has been extended and applied to interpreting the experimental K-shell X-ray satellite spectra for more than 40 years in keV-MeV/amu heavy-ion impact on solids. The binding energies of the K-shell MIMS of elements from Al to Ti were determined to be 80–200 eV. The successful extension of the model to the K-shell MIMS confirms that all elements in the periodic table and their combinations are subjected to the MIMS formation.

  1. Investigation of capacitance characteristics in metal/high-k

    Indian Academy of Sciences (India)

    Keywords. C − V characteristic; high-k dielectric; interface state density; MIS structure; nanotechnology; TCAD simulation. Abstract. Capacitance vs. voltage ( C − V ) curves at AC high frequency of a metal–insulator–semiconductor (MIS) capacitorare investigated in this paper. Bi-dimensional simulations with Silvaco TCAD ...

  2. Ultrahigh capacitance density for multiple ALD-grown MIM capacitor stacks in 3-D silicon

    NARCIS (Netherlands)

    Klootwijk, J.H.; Jinesh, K.B.; Dekkers, W.; Verhoeven, J.F.C.; Heuvel, van den F.C.; Kim, H.-D.; Blin, D.; Verheijen, M.A.; Weemaes, R.G.R.; Kaiser, M.; Ruigrok, J.J.M.; Roozeboom, F.

    2008-01-01

    "Trench" capacitors containing multiple metal-insulator-metal (MIM) layer stacks are realized by atomic-layer deposition (ALD), yielding an ultrahigh capacitance density of 440 nF/mm2 at a breakdown voltage VBD > 6 V. This capacitance density on silicon is at least 10 times higher than the values

  3. On the leakage problem of MIM capacitors due to improper etching of titanium nitride

    NARCIS (Netherlands)

    Groenland, A.W.; Wolters, Robertus A.M.; Kovalgin, Alexeij Y.; Schmitz, Jurriaan

    2010-01-01

    In this work, Metal-insulator-metal (MIM) capacitor structures are fabricated in a technology using TiN as electrode material. The electrical characterization revealed devices with small and large leakage currents. Scanning Electron Microscopy (SEM) inspection showed a correlation between high

  4. Analysis of mixtures of organic volatile compound in water by mims. semiquantitative evaluation of data

    Czech Academy of Sciences Publication Activity Database

    Kebrlová, Natálie; Janderka, P.

    2009-01-01

    Roč. 74, č. 4 (2009), s. 581-597 ISSN 0010-0765 Institutional research plan: CEZ:AV0Z40500505 Keywords : membrane introduction mass spectrometry * MIMS * direct inlet probe Subject RIV: CD - Macromolecular Chemistry Impact factor: 0.856, year: 2009

  5. Medical Information Management System (MIMS): A generalized interactive information system

    Science.gov (United States)

    Alterescu, S.; Friedman, C. A.; Hipkins, K. R.

    1975-01-01

    An interactive information system is described. It is a general purpose, free format system which offers immediate assistance where manipulation of large data bases is required. The medical area is a prime area of application. Examples of the system's operation, commentary on the examples, and a complete listing of the system program are included.

  6. SU-E-J-80: A Comparative Analysis of MIM and Pinnacle Software for Adaptive Planning

    Energy Technology Data Exchange (ETDEWEB)

    Stanford, J; Duggar, W; Morris, B; Yang, C [University of Mississippi Med. Center, Jackson, MS (United States)

    2015-06-15

    Purpose: IMRT treatment is often administered with image guidance and small PTV margins. Change in body habitus such as weight loss and tumor response during the course of a treatment could be significant, thus warranting re-simulation and re-planning. Adaptive planning is challenging and places significant burden on the staff, as such some commercial vendors are now offering adaptive planning software to stream line the process of re-planning and dose accumulation between different CT data set. The purpose of this abstract is to compare the adaptive planning tools between Pinnacle version 9.8 and MIM 6.4 software. Methods: Head and Neck cases of previously treated patients that experienced anatomical changes during the course of their treatment were chosen for evaluation. The new CT data set from the re-simulation was imported to Pinnacle and MIM software. The dynamic planning tool in pinnacle was used to calculate the old plan with fixed MU setting on the new CT data. In MIM, the old CT was registered to the new data set, followed by a dose transformation to the new CT. The dose distribution to the PTV and critical structures from each software were analyzed and compared. Results: 9% difference was observed between the Global maximum doses reported by both software. Mean doses to organs at risk and PTV’s were within 6 % however pinnacle showed greater difference in PTV coverage change. Conclusion: MIM software adaptive planning corrects for geometrical changes without consideration for the effect of radiological path length on dose distribution; however Pinnacle corrects for both geometric and radiological effect on the dose distribution. Pinnacle gives a better estimate of the dosimetric impact due to anatomical changes.

  7. Thermodynamic study of binary mixture of x1[C6mim][BF4] + x21-propanol: Measurements and molecular modeling

    International Nuclear Information System (INIS)

    Kermanpour, F.; Sharifi, T.

    2012-01-01

    Highlights: ► Densities and viscosities for binary mixture of {x 1 [C 6 mim][BF 4 ] + x 2 1-propanol} were measured at different temperatures. ► The excess molar functions were calculated from the obtained experimental data. ► These data were correlated with the Redlich–Kister equation and PFP model to obtain the coefficients and standard deviations. - Abstract: Densities, ρ, and viscosities, η, of pure 1-hexyl-3-methylimidazoliumtetrafluoro borate ([C 6 mim][BF 4 ]) and 1-propanol, and their binary mixture {x 1 [C 6 mim][BF 4 ] + x 2 1-propanol} were measured at atmospheric pressure and in the temperature range of 293.15–333.15 K. The excess molar volumes, V m E , thermal expansion coefficients, α, and their excess values, α E , isothermal coefficient of excess molar enthalpy, (∂H m E /∂p) T,x and excess viscosities, η E , were calculated from the experimental values of densities and viscosities. The excess molar volumes of the binary mixture are negative over the entire mole fraction range and increase with increasing temperature. Excess viscosities are negative over the entire mole fraction range of the mixture and decrease with increasing temperature. The obtained excess molar volumes and excess viscosities were correlated with the Redlich–Kister equation. The experimental results have also been used to examine the applicability of Prigogine–Flory–Patterson (PFP) theory in predicting the excess molar volume of the binary mixture. It is indicated that agreement between excess molar volumes calculated via PFP theory and the experimental results is good in all temperatures.

  8. Structural Fine-Tuning of MIT-Interacting Motif 2 (MIM2) and Allosteric Regulation of ESCRT-III by Vps4 in Yeast.

    Science.gov (United States)

    Kojima, Rieko; Obita, Takayuki; Onoue, Kousuke; Mizuguchi, Mineyuki

    2016-06-05

    The endosomal sorting complex required for transport (ESCRT) facilitates roles in membrane remodeling, such as multivesicular body biogenesis, enveloped virus budding and cell division. In yeast, Vps4 plays a crucial role in intraluminal vesicle formation by disassembling ESCRT proteins. Vps4 is recruited by ESCRT-III proteins to the endosomal membrane through the interaction between the microtubule interacting and trafficking (MIT) domain of Vps4 and the C-terminal MIT-interacting motif (MIM) of ESCRT-III proteins. Here, we have determined the crystal structure of Vps4-MIT in a complex with Vps20, a member of ESCRT-III, and revealed that Vps20 adopts a unique MIM2 conformation. Based on structural comparisons with other known MIM2s, we have refined the consensus sequence of MIM2. We have shown that another ESCRT-III protein, Ist1, binds to Vps4-MIT via its C-terminal MIM1 with higher affinity than Vps2, but lacks MIM2 by surface plasmon resonance. Surprisingly, the Ist1 MIM1 competed with the MIM2 of Vfa1, a regulator of Vps4, for binding to Vps4-MIT, even though these MIMs bind in non-overlapping sites on the MIT. These findings provide insight into the allosteric recognition of MIMs of ESCRT-III by Vps4 and also the regulation of ESCRT machinery at the last step of membrane remodeling. Copyright © 2016 Elsevier Ltd. All rights reserved.

  9. Mechanical Design of the NSTX High-k Scattering Diagnostic

    International Nuclear Information System (INIS)

    Feder, R.; Mazzucato, E.; Munsat, T.; Park, H.; Smith, D.R.; Ellis, R.; Labik, G.; Priniski, C.

    2005-01-01

    The NSTX High-k Scattering Diagnostic measures small-scale density fluctuations by the heterodyne detection of waves scattered from a millimeter wave probe beam at 280 GHz and λ = 1.07 mm. To enable this measurement, major alterations were made to the NSTX vacuum vessel and Neutral Beam armor. Close collaboration between the PPPL physics and engineering staff resulted in a flexible system with steerable launch and detection optics that can position the scattering volume either near the magnetic axis (ρ ∼ .1) or near the edge (ρ ∼ .8). 150 feet of carefully aligned corrugated waveguide was installed for injection of the probe beam and collection of the scattered signal in to the detection electronics

  10. Identical high- K three-quasiparticle rotational bands

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Harjeet; Singh, Pardeep [Guru Nanak Dev University, Department of Physics, Amritsar (India)

    2016-12-15

    A comprehensive study of high-K three-quasiparticle rotational bands in odd-A nuclei indicates the similarity in γ-ray energies and dynamic moment of inertia I{sup (2)}. The extent of the identicality between the rotational bands is evaluated by using the energy factor method. For nuclei pairs exhibiting identical bands, the average relative change in the dynamic moment of inertia I{sup (2)} is also determined. The identical behaviour shown by these bands is attributed to the interplay of nuclear structure parameters: deformation and the pairing correlations. Also, experimental trend of the I(ℎ) vs. ℎω (MeV) plot for these nuclei pairs is shown to be in agreement with Tilted-Axis Cranking (TAC) model calculations. (orig.)

  11. Mechanical Design of the NSTX High-k Scattering Diagnostic

    Energy Technology Data Exchange (ETDEWEB)

    Feder, R.; Mazzucato, E.; Munsat, T.; Park, H,; Smith, D. R.; Ellis, R.; Labik, G.; Priniski, C.

    2005-09-26

    The NSTX High-k Scattering Diagnostic measures small-scale density fluctuations by the heterodyne detection of waves scattered from a millimeter wave probe beam at 280 GHz and {lambda}=1.07 mm. To enable this measurement, major alterations were made to the NSTX vacuum vessel and Neutral Beam armor. Close collaboration between the PPPL physics and engineering staff resulted in a flexible system with steerable launch and detection optics that can position the scattering volume either near the magnetic axis ({rho} {approx} .1) or near the edge ({rho} {approx} .8). 150 feet of carefully aligned corrugated waveguide was installed for injection of the probe beam and collection of the scattered signal in to the detection electronics.

  12. Nanostructure characterization of high k materials by spectroscopic ellipsometry

    International Nuclear Information System (INIS)

    Pereira, L.; Aguas, H.; Fortunato, E.; Martins, R.

    2006-01-01

    In this work, the optical and structural properties of high k materials such as tantalum oxide and titanium oxide were studied by spectroscopic ellipsometry, where a Tauc-Lorentz dispersion model based in one (amorphous films) or two oscillators (microcrystalline films) was used. The samples were deposited at room temperature by radio frequency magnetron sputtering and then annealed at temperatures from 100 to 500 deg. C. Concerning the tantalum oxide films, the increase of the annealing temperature, up to 500 deg. C does not change the amorphous nature of the films, increasing, however, their density. The same does not happen with the titanium oxide films that are microcrystalline, even when deposited at room temperature. Data concerning the use of a four-layer model based on one and two Tauc-Lorentz dispersions is also discussed, emphasizing its use for the detection of an amorphous incubation layer, normally present on microcrystalline films grown by sputtering

  13. Electronic States of High-k Oxides in Gate Stack Structures

    Science.gov (United States)

    Zhu, Chiyu

    In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

  14. High-k dielectrics as bioelectronic interface for field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Borstlap, D

    2007-03-15

    Ion-sensitive field-effect transistors (ISFETs) are employed as bioelectronic sensors for the cell-transistor coupling and for the detection of DNA sequences. For these applications, thermally grown SiO{sub 2} films are used as standard gate dielectric. In the first part of this dissertation, the suitability of high-k dielectrics was studied to increase the gate capacitance and hence the signal-to-noise ratio of bioelectronic ISFETs: Upon culturing primary rat neurons on the corresponding high-k dielectrics, Al{sub 2}O{sub 3}, yttria stabilised zirkonia (YSZ), DyScO{sub 3}, CeO{sub 2}, LaAlO{sub 3}, GdScO{sub 3} and LaScO{sub 3} proved to be biocompatible substrates. Comprehensive electrical and electrochemical current-voltage measurements and capacitance-voltage measurements were performed for the determination of the dielectric properties of the high-k dielectrics. In the second part of the dissertation, standard SiO{sub 2} ISFETs with lower input capacitance and high-k dielectric Al{sub 2}O{sub 3}, YSZ und DyScO{sub 3} ISFETs were comprehensively characterised and compared with each other regarding their signal-to-noise ratio, their ion sensitivity and their drift behaviour. The ion sensitivity measurements showed that the YSZ ISFETs were considerably more sensitive to K{sup +} and Na{sup +} ions than the SiO{sub 2}, Al{sub 2}O{sub 3} und DyScO{sub 3} ISFETs. In the final third part of the dissertation, bioelectronic experiments were performed with the high-k ISFETs. The shape of the signals, which were measured from HL-1 cells with YSZ ISFETs, differed considerably from the corresponding measurements with SiO{sub 2} and DyScO{sub 3} ISFETs: After the onset of the K{sup +} current, the action potentials measured with YSZ ISFETs showed a strong drift in the direction opposite to the K{sup +} current signal. First coupling experiments between HEK 293 cells, which were transfected with a K{sup +} ion channel, and YSZ ISFETs affirmed the assumption from the HL-1

  15. Modeling of leakage currents in high-k dielectrics

    International Nuclear Information System (INIS)

    Jegert, Gunther Christian

    2012-01-01

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO 2 material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO 2 /TiN capacitor structures were suggested and problem areas that may

  16. Modeling of leakage currents in high-k dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Jegert, Gunther Christian

    2012-03-15

    Leakage currents are one of the major bottlenecks impeding the downscaling efforts of the semiconductor industry. Two core devices of integrated circuits, the transistor and, especially, the DRAM storage capacitor, suffer from the increasing loss currents. In this perspective a fundamental understanding of the physical origin of these leakage currents is highly desirable. However, the complexity of the involved transport phenomena so far has prevented the development of microscopic models. Instead, the analysis of transport through the ultra-thin layers of high-permittivity (high-k) dielectrics, which are employed as insulating layers, was carried out at an empirical level using simple compact models. Unfortunately, these offer only limited insight into the physics involved on the microscale. In this context the present work was initialized in order to establish a framework of microscopic physical models that allow a fundamental description of the transport processes relevant in high-k thin films. A simulation tool that makes use of kinetic Monte Carlo techniques was developed for this purpose embedding the above models in an environment that allows qualitative and quantitative analyses of the electronic transport in such films. Existing continuum approaches, which tend to conceal the important physics behind phenomenological fitting parameters, were replaced by three-dimensional transport simulations at the level of single charge carriers. Spatially localized phenomena, such as percolation of charge carriers across pointlike defects, being subject to structural relaxation processes, or electrode roughness effects, could be investigated in this simulation scheme. Stepwise a self-consistent, closed transport model for the TiN/ZrO{sub 2} material system, which is of outmost importance for the semiconductor industry, was developed. Based on this model viable strategies for the optimization of TiN/ZrO{sub 2}/TiN capacitor structures were suggested and problem areas

  17. A narrativa dos afetos no documentário O Samba que mora em mim

    Directory of Open Access Journals (Sweden)

    Maria Angela Pavan

    2013-08-01

    Full Text Available This article intents to understand the affectionate look of theBrazilian filmmaker Geórgia Guerra-Peixe. We can see that look in her documentarycalled O samba que mora em mim, winner of the jury special award of the São PauloFilm Festival [Mostra de Cinema de São Paulo], in 2010. For this study we interviewedGeórgia, collected information published in the press when the documentary was release,in february 2011, and we make a film analysis.

  18. Solvent extraction of Pu(IV) with TODGA in C6mimTf2N

    International Nuclear Information System (INIS)

    Xiaohong Huang; Qiuyue Zhang; Jinping Liu; Hui He; Wenbin Zhu; Xiaorong Wang

    2013-01-01

    Studies on the solvent extraction of Plutonium(Pu(IV)) from aqueous nitric acid by N,N,N'N'tetraoctyl-diglycolamide (TODGA) in 1-hexyl-3-methylimidazolium-bis(trifluoromethylsulfonyl) imide (C 6 mimTf 2 N) room temperature ionic liquid (RTIL) were carried out. It was found that Pu(IV) is extracted into RTIL phase as [Pu(NO 3 )(TODGA)] 3+ through cation exchange mechanism. Extraction reaction equation is obtained by the influence of acidity and extractant concentration, and the parameters of thermodynamic equilibrium constant was calculated. (author)

  19. Analysis and Geometry : MIMS-GGTM, in Honour of Mohammed Salah Baouendi

    CERN Document Server

    Kacimi, Aziz; Kallel, Sadok; Mir, Nordine

    2015-01-01

    This book includes selected papers presented at the MIMS (Mediterranean Institute for the Mathematical Sciences) - GGTM (Geometry and Topology Grouping for the Maghreb) conference, held in memory of Mohammed Salah Baouendi, a most renowned figure in the field of several complex variables, who passed away in 2011. All research articles were written by leading experts, some of whom are prize winners in the fields of complex geometry, algebraic geometry and analysis. The book offers a valuable resource for all researchers interested in recent developments in analysis and geometry.

  20. Influence of thermal debinding on the final properties of Fe–Si soft magnetic alloys for metal injection molding (MIM)

    Energy Technology Data Exchange (ETDEWEB)

    Páez-Pavón, A.; Jiménez-Morales, A. [Dpto. Ciencia e Ing. de materiales e Ing. Química, Universidad Carlos III de Madrid, 28911 Leganés, Madrid (Spain); Santos, T.G. [UNIDEMI, Departamento de Engenharia Mecânica e Industrial, Faculdade de Ciências e Tecnologia, Universidade Nova de Lisboa, 2829-516 Caparica (Portugal); Quintino, L. [Instituto Superior Técnico, Universidade de Lisboa, 1049-001 Lisboa (Portugal); Torralba, J.M. [Dpto. Ciencia e Ing. de materiales e Ing. Química, Universidad Carlos III de Madrid, 28911 Leganés, Madrid (Spain)

    2016-10-15

    Metal injection molding (MIM) may be used to produce soft magnetic materials with optimal mechanical and magnetic properties. Unlike other techniques, MIM enables the production of complex and small Fe–Si alloy parts with silicon contents greater than 3% by weight. In MIM process development, it is critical to design a proper debinding cycle not only to ensure complete removal of the binder system but also to obtain improved properties in the final part. This work is a preliminary study on the production of Fe-3.8Si soft magnetic parts by MIM using pre-alloyed powders and a non-industrialized binder. Two different heating rates during thermal debinding were used to study their effect on the final properties of the part. The final properties of the sintered parts are related to thermal debinding. It has been demonstrated that the heating rate during thermal debinding has a strong influence on the final properties of Fe–Si soft magnetic alloys. - Highlights: • The properties of MIM Fe-Si alloy are influenced by the debinding heating rate. • The slow debinding led to a lower porosity, lower oxygen content and grain growth. • The magnetization of the sintered samples improved after a slow thermal debinding.

  1. Two solid-phase recycling method for basic ionic liquid [C4mim]Ac by macroporous resin and ion exchange resin from Schisandra chinensis fruits extract.

    Science.gov (United States)

    Ma, Chun-hui; Zu, Yuan-gang; Yang, Lei; Li, Jian

    2015-01-22

    In this study, two solid-phase recycling method for basic ionic liquid (IL) 1-butyl-3-methylimidazolium acetate ([C4mim]Ac) were studied through a digestion extraction system of extracting biphenyl cyclooctene lignans from Schisandra chinensis. The RP-HPLC detection method for [C4mim]Ac was established in order to investigate the recovery efficiency of IL. The recycling method of [C4mim]Ac is divided into two steps, the first step was the separation of lignans from the IL solution containing HPD 5000 macroporous resin, the recovery efficiency and purity of [C4mim]Ac achieved were 97.8% and 67.7%, respectively. This method cannot only separate the lignans from [C4mim]Ac solution, also improve the purity of lignans, the absorption rate of lignans in [C4mim]Ac solution was found to be higher (69.2%) than that in ethanol solution (57.7%). The second step was the purification of [C4mim]Ac by the SK1B strong acid ion exchange resin, an [C4mim]Ac recovery efficiency of 55.9% and the purity higher than 90% were achieved. Additionally, [C4mim]Ac as solvent extraction of lignans from S. chinensis was optimized, the hydrolysis temperature was 90°C and the hydrolysis time was 2h. Copyright © 2014 Elsevier B.V. All rights reserved.

  2. Development of Metal Plate with Internal Structure Utilizing the Metal Injection Molding (MIM Process

    Directory of Open Access Journals (Sweden)

    Kwangho Shin

    2013-12-01

    Full Text Available In this study, we focus on making a double-sided metal plate with an internal structure, such as honeycomb. The stainless steel powder was used in the metal injection molding (MIM process. The preliminary studies were carried out for the measurement of the viscosity of the stainless steel feedstock and for the prediction of the filling behavior through Computer Aided Engineering (CAE simulation. PE (high density polyethylene (HDPE and low density polyethylene (LDPE and polypropylene (PP resins were used to make the sacrificed insert with a honeycomb structure using a plastic injection molding process. Additionally, these sacrificed insert parts were inserted in the metal injection mold, and the metal injection molding process was carried out to build a green part with rectangular shape. Subsequently, debinding and sintering processes were adopted to remove the sacrificed polymer insert. The insert had a suitable rigidity that was able to endure the filling pressure. The core shift analysis was conducted to predict the deformation of the insert part. The 17-4PH feedstock with a low melting temperature was applied. The glass transition temperature of the sacrificed polymer insert would be of a high grade, and this insert should be maintained during the MIM process. Through these processes, a square metal plate with a honeycomb structure was made.

  3. Strong coupling effects between a meta-atom and MIM nanocavity

    Directory of Open Access Journals (Sweden)

    San Chen

    2012-09-01

    Full Text Available In this paper, we investigate the strong coupling effects between a meta-atom and a metal-insulator-metal (MIM nanocavity. By changing the meta-atom sizes, we achieve the meta-atomic electric dipole, quadrupole or multipole interaction with the plasmonic nanocavity, in which characteristic anticrossing behaviors demonstrate the occurrence of the strong coupling. The various interactions present obviously different splitting values and behaviors of dependence on the meta-atomic position. The largest Rabi-type splittings, about 360.0 meV and 306.1 meV, have been obtained for electric dipole and quadrupole interaction, respectively. We attribute the large splitting to the highly-confined cavity mode and the large transition dipole of the meta-atom. Also the Rabi-type oscillation in time domain is given.

  4. Molar Surface Gibbs Energy of the Aqueous Solution of Ionic Liquid [C4mim][Oac

    Institute of Scientific and Technical Information of China (English)

    TONG Jing; ZHENG Xu; TONG Jian; QU Ye; LIU Lu; LI Hui

    2017-01-01

    The values of density and surface tension for aqueous solution of ionic liquid(IL) 1-butyl-3-methylimidazolium acetate([C4mim][OAc]) with various molalities were measured in the range of 288.15-318.15 K at intervals of 5 K.On the basis of thermodynamics,a semi-empirical model-molar surface Gibbs energy model of the ionic liquid solution that could be used to predict the surface tension or molar volume of solutions was put forward.The predicted values of the surface tension for aqueous [C4im][OAc] and the corresponding experimental ones were highly correlated and extremely similar.In terms of the concept of the molar Gibbs energy,a new E(o)tv(o)s equation was obtained and each parameter of the new equation has a clear physical meaning.

  5. Efficient removal of H2S at high temperature using the ionic liquid solutions of [C4mim]3PMo12O40-An organic polyoxometalate.

    Science.gov (United States)

    Ma, Yunqian; Liu, Xinpeng; Wang, Rui

    2017-06-05

    An innovative approach to H 2 S capture and sulfur recovery via liquid redox at high temperature has been developed using [C 4 mim] 3 PMo 12 O 40 at temperatures ranging from 80 to 180°C, which is superior to the conventional water-based system with an upper limit of working temperature normally below 60°C. The ionic liquids used as solvents include [C 4 mim]Cl, [C 4 mim]BF 4 , [C 4 mim]PF 6 and [C 4 mim]NTf 2 . Microscopic observation and turbidity measurement were used to investigate the dissolution of [C 4 mim] 3 PMo 12 O 40 in the ionic liquids. Stabilization energy between H 2 S and the anion of ionic liquid as well as H 2 O was calculated to illustrate the interaction between H 2 S and the solvents. The cavity theory can be adopted to illustrate the mechanism for H 2 S absorption: the Cl - ion with small radius can be incorporated into the cavities of [C 4 mim] 3 PMo 12 O 40 , and interact with H 2 S strongly. The underlying mechanism for sulfur formation is the redox reaction between H 2 S and PMo 12 O 40 3- . H 2 S can be oxidized to elemental sulfur and Mo 6+ is partly reduced during absorption, according to UV-vis and FTIR spectra. The [C 4 mim] 3 PMo 12 O 40 -[C 4 mim]Cl after reaction can be readily regenerated by air and thus enabling its efficient and repeatitive use. The absorbent of [C 4 mim] 3 PMo 12 O 40 -ionic liquid system provides a new approach for wet oxidation desulfurization at high temperature. Copyright © 2017 Elsevier B.V. All rights reserved.

  6. Study on the enthalpy of solution and enthalpy of dilution for the ionic liquid [C3mim][Val] (1-propyl-3-methylimidazolium valine)

    International Nuclear Information System (INIS)

    Guan Wei; Li Long; Ma Xiaoxue; Tong Jing; Fang Dawei; Yang Jiazhen

    2012-01-01

    Graphical abstract: The thermodynamic cycle for estimation of the hydration enthalpy of ionic liquid [C 3 mim][Val]. Highlights: ► A new amino acid ionic liquid [C 3 mim][Val] was prepared. ► The molar enthalpies of solution of the ionic liquid. ► The hydration enthalpy of the cation [C 3 mim] + was estimated. ► The molar enthalpies of dilution, of aqueous [C 3 mim][Val] were measured. - Abstract: A new amino acid ionic liquid (AAIL) [C 3 mim][Val] (1-propyl-3-methylimidazolium valine) was prepared by the neutralization method. Using the solution-reaction isoperibol calorimeter, molar solution enthalpies of the ionic liquid [C 3 mim][Val] with known amounts of water and with different concentrations in molality were measured at T = 298.15 K. In terms of standard addition method (SAM) and Archer’s method, the standard molar enthalpy of solution for [C 3 mim][Val] without water, Δ s H m ∘ = (−55.7 ± 0.4) kJ · mol −1 , was obtained. The hydration enthalpy of the cation [C 3 mim] + , ΔH + ([C 3 mim] + ) = −226 kJ · mol −1 , was estimated in terms of Glasser’s theory. Using the RD496-III heat conduction microcalorimeter, the molar enthalpies of dilution, Δ D H m (m i → m f ), of aqueous [C 3 mim][Val] with various values of molality were measured. The values of Δ D H m (m i → m f ) were fitted to Pitzer’s ion-interaction model and the values of apparent relative molar enthalpy, φ L, calculated using Pitzer’s ion-interaction model.

  7. Continuous in-situ monitoring of dissolved gases for the characterization of the Critical Zone with a MIMS

    Science.gov (United States)

    Chatton, Eliot; Labasque, Thierry; Aquilina, Luc; de la Bernardie, Jérôme; Guihéneuf, Nicolas

    2016-04-01

    In the perspective of a temporal and spatial exploration of the Critical Zone, we developed an in situ monitoring instrument for continuous dissolved gas analysis (N2, O2, CO2, CH4, He, Ne, Ar, Kr, Xe). With a large resolution (5 orders of magnitude) and a capability of high frequency multi-tracer analysis (1 gas every 1.5 seconds), the MIMS (Membrane Inlet Mass Spectrometer) is an innovative tool allowing the investigation of a large panel of physical and biogeochemical processes. First of all, this study presents the results of groundwater tracer tests using dissolved gases in order to evaluate transport properties of a fractured media in Brittany, France (Ploemeur, ORE H+). The tracer test experiment showed that the MIMS is perfectly suitable for field work. The instrument provides precise measurements accurate enough to produce breakthrough curves during groundwater tracer tests. The results derived from 4He data gives transport parameters in good agreement with the results obtained with a fluorescent tracer. Combined with a pump and a multi-parameter probe, the MIMS is also capable to perform accurate dissolved gases well-logs allowing a real-time estimation of recharge conditions (temperature, excess air), aquifer stratification, redox conditions and groundwater residence time by 4He dating. Therefore, the MIMS is a valuable tool for in situ characterization of biogeochemical reactivity in aquatic systems, the determination of aquifer transport properties, the monitoring of groundwater recharge conditions and the characterization of aquifer-river exchanges.

  8. Capillary rheological studies of 17-4 PH MIM feedstocks prepared using a custom CSIR binder system

    CSIR Research Space (South Africa)

    Machaka, Ronald

    2018-02-01

    Full Text Available This paper reports on an attempt to establish the rheological properties of 17-4 PH stainless steel MIM feedstocks prepared using a proprietary CSIR wax-based binder system. The influence of powder and feedstock characteristics on the rheological...

  9. Biogenesis of the mitochondrial TOM complex: Mim1 promotes insertion and assembly of signal-anchored receptors.

    Science.gov (United States)

    Becker, Thomas; Pfannschmidt, Sylvia; Guiard, Bernard; Stojanovski, Diana; Milenkovic, Dusanka; Kutik, Stephan; Pfanner, Nikolaus; Meisinger, Chris; Wiedemann, Nils

    2008-01-04

    The translocase of the outer membrane (TOM complex) is the central entry gate for nuclear-encoded mitochondrial precursor proteins. All Tom proteins are also encoded by nuclear genes and synthesized as precursors in the cytosol. The channel-forming beta-barrel protein Tom40 is targeted to mitochondria via Tom receptors and inserted into the outer membrane by the sorting and assembly machinery (SAM complex). A further outer membrane protein, Mim1, plays a less defined role in assembly of Tom40 into the TOM complex. The three receptors Tom20, Tom22, and Tom70 are anchored in the outer membrane by a single transmembrane alpha-helix, located at the N terminus in the case of Tom20 and Tom70 (signal-anchored) or in the C-terminal portion in the case of Tom22 (tail-anchored). Insertion of the precursor of Tom22 into the outer membrane requires pre-existing Tom receptors while the import pathway of the precursors of Tom20 and Tom70 is only poorly understood. We report that Mim1 is required for efficient membrane insertion and assembly of Tom20 and Tom70, but not Tom22. We show that Mim1 associates with SAM(core) components to a large SAM complex, explaining its role in late steps of the assembly pathway of Tom40. We conclude that Mim1 is not only required for biogenesis of the beta-barrel protein Tom40 but also for membrane insertion and assembly of signal-anchored Tom receptors. Thus, Mim1 plays an important role in the efficient assembly of the mitochondrial TOM complex.

  10. Temperature behavior of electrical properties of high-k lead-magnesium-niobium titanate thin-films

    Energy Technology Data Exchange (ETDEWEB)

    Chen Wenbin, E-mail: cwb0201@163.com [Electromechanical Engineering College, Guilin University of Electronic Technology (China); McCarthy, Kevin G. [Department of Electrical and Electronic Engineering, University College Cork (Ireland); Copuroglu, Mehmet; O' Brien, Shane; Winfield, Richard; Mathewson, Alan [Tyndall National Institute, University College Cork (Ireland)

    2012-05-01

    This paper reports on the temperature dependence of the electrical properties of high-k lead-magnesium-niobium titanate thin films processed with different compositions (with and without nanoparticles) and with different annealing temperatures (450 Degree-Sign C and 750 Degree-Sign C). These characterization results support the ongoing investigation of the material's electrical properties which are necessary before the dielectric can be used in silicon-based IC applications.

  11. Structural and optical properties of germanium nanostructures on Si(100 and embedded in high-k oxides

    Directory of Open Access Journals (Sweden)

    Ray Samit

    2011-01-01

    Full Text Available Abstract The structural and optical properties of Ge quantum dots (QDs grown on Si(001 for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001 QDs infrared photodetector device are presented. The properties of Ge nanocrystals of different size and density embedded in high-k matrices grown using radio frequency magnetron sputtering have been studied. Transmission electron micrographs have revealed the formation of isolated spherical Ge nanocrystals in high-k oxide matrix of sizes ranging from 4 to 18 nm. Embedded nanocrystals in high band gap oxides have been found to act as discrete trapping sites for exchanging charge carriers with the conduction channel by direct tunneling that is desired for applications in floating gate memory devices.

  12. A standard MIGS/MIMS compliant XML Schema: toward the development of the Genomic Contextual Data Markup Language (GCDML).

    Science.gov (United States)

    Kottmann, Renzo; Gray, Tanya; Murphy, Sean; Kagan, Leonid; Kravitz, Saul; Lombardot, Thierry; Field, Dawn; Glöckner, Frank Oliver

    2008-06-01

    The Genomic Contextual Data Markup Language (GCDML) is a core project of the Genomic Standards Consortium (GSC) that implements the "Minimum Information about a Genome Sequence" (MIGS) specification and its extension, the "Minimum Information about a Metagenome Sequence" (MIMS). GCDML is an XML Schema for generating MIGS/MIMS compliant reports for data entry, exchange, and storage. When mature, this sample-centric, strongly-typed schema will provide a diverse set of descriptors for describing the exact origin and processing of a biological sample, from sampling to sequencing, and subsequent analysis. Here we describe the need for such a project, outline design principles required to support the project, and make an open call for participation in defining the future content of GCDML. GCDML is freely available, and can be downloaded, along with documentation, from the GSC Web site (http://gensc.org).

  13. Heterozygous CAV1 frameshift mutations (MIM 601047 in patients with atypical partial lipodystrophy and hypertriglyceridemia

    Directory of Open Access Journals (Sweden)

    Alston Lindsay

    2008-01-01

    Full Text Available Abstract Background Mice with a deleted Cav1 gene encoding caveolin-1 develop adipocyte abnormalities and insulin resistance. From genomic DNA of patients with atypical lipodystrophy and hypertriglyceridemia who had no mutations in any known lipodystrophy gene, we used DNA sequence analysis to screen the coding regions of human CAV1 (MIM 601047. Results We found a heterozygous frameshift mutation in CAV1, designated I134fsdelA-X137, in a female patient who had atypical partial lipodystrophy, with subcutaneous fat loss affecting the upper part of her body and face, but sparing her legs, gluteal region and visceral fat stores. She had severe type 5 hyperlipoproteinemia, with recurrent pancreatitis. In addition, she had some atypical features, including congenital cataracts and neurological findings. Her father was also heterozygous for this mutation, and had a similar pattern of fat redistribution, hypertriglyceridemia and congenital cataracts, with milder neurological involvement. An unrelated patient had a different heterozygous frameshift mutation in the CAV1 gene, designated -88delC. He also had a partial lipodystrophy phenotype, with subcutaneous fat loss affecting the arms, legs and gluteal region, but sparing his face, neck and visceral fat stores. He also had severe type 5 hyperlipoproteinemia, with recurrent pancreatitis; however he had no clinically apparent neurological manifestations. The mutations were absent from the genomes of 1063 healthy individuals. Conclusion Thus, very rare CAV1 frameshift mutations appear to be associated with atypical lipodystrophy and hypertriglyceridemia.

  14. Image fusion using MIM software via picture archiving and communication system

    International Nuclear Information System (INIS)

    Gu Zhaoxiang; Jiang Maosong

    2001-01-01

    The preliminary studies of the multimodality image registration and fusion were performed using an image fusion software and a picture archiving and communication system (PACS) to explore the methodology. Original image voluminal data were acquired with a CT scanner, MR and dual-head coincidence SPECT, respectively. The data sets from all imaging devices were queried, retrieved, transferred and accessed via DICOM PACS. The image fusion was performed at the SPECT ICON work-station, where the MIM (Medical Image Merge) fusion software was installed. The images were created by re-slicing original volume on the fly. The image volumes were aligned by translation and rotation of these view ports with respect to the original volume orientation. The transparency factor and contrast were adjusted in order that both volumes can be visualized in the merged images. The image volume data of CT, MR and nuclear medicine were transferred, accessed and loaded via PACS successfully. The perfect fused images of chest CT/ 18 F-FDG and brain MR/SPECT were obtained. These results showed that image fusion technique using PACS was feasible and practical. Further experimentation and larger validation studies were needed to explore the full potential of the clinical use

  15. Cerebral manifestations, hemihypertrophy and lymphoedema of one leg in a child with epidermal nevus syndrome (Schimmelpenning-Feuerstein-Mims)

    International Nuclear Information System (INIS)

    Neumann, Luitgard M.; Kunze, Juergen; Scheer, Ianina; Stoever, Brigitte

    2003-01-01

    The report focuses on a rare variant form of epidermal nevus syndrome (ENS) (Schimmelpenning-Feuerstein-Mims syndrome) describing lesions involving the skin, eyes, skeleton, heart and brain in an 11-year-old boy. Despite his evident brain pathology, the boy lacks neurological symptoms and mental retardation. We describe his unusual MRI appearances and radiographic skeletal findings. To our knowledge this is the first report of ENS with lymphoedema occurring together in the same individual. (orig.)

  16. Refractive properties of imidazolium ionic liquids with alanine anion [C n mim][Ala] ( n = 2, 3, 4, 5, 6)

    Science.gov (United States)

    Zhou, Cai-bin; Li, Jing; Yi, Zhe; Ai, Hong-jun

    2017-10-01

    Imidazolium ionic liquids with alanine anion, [C n mim][Ala] ( n = 2, 3, 4, 5, 6), were prepared and characterized. The standard addition method was used to measure refractivity of the synthesized ionic liquids in order to eliminate the effect of water traces in the ionic liquids. The molar refraction and molecular polarizability were also calculated by Lorentz-Lorenz's method. Using liner extrapolation, the semiempirical estimation method for optical properties of other ionic liquids with amino acid anions was established.

  17. Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor

    Science.gov (United States)

    Charles Pravin, J.; Nirmal, D.; Prajoon, P.; Mohan Kumar, N.; Ajayan, J.

    2017-04-01

    In this paper the Dual Metal Surround Gate Junctionless Transistor (DMSGJLT) has been implemented with various high-k dielectric. The leakage current in the device is analysed in detail by obtaining the band structure for different high-k dielectric material. It is noticed that with increasing dielectric constant the device provides more resistance for the direct tunnelling of electron in off state. The gate oxide capacitance also shows 0.1 μF improvement with Hafnium Oxide (HfO2) than Silicon Oxide (SiO2). This paved the way for a better memory application when high-k dielectric is used. The Six Transistor (6T) Static Random Access Memory (SRAM) circuit implemented shows 41.4% improvement in read noise margin for HfO2 than SiO2. It also shows 37.49% improvement in write noise margin and 30.16% improvement in hold noise margin for HfO2 than SiO2.

  18. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    International Nuclear Information System (INIS)

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  19. Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

    Science.gov (United States)

    Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

    2013-06-01

    In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

  20. Optimum source/drain overlap design for 16 nm high-k/metal gate MOSFETs

    International Nuclear Information System (INIS)

    Jang, Junyong; Lim, Towoo; Kim, Youngmin

    2009-01-01

    We explore a source/drain (S/D) design for a 16 nm MOSFET utilizing a replacement process for a high-k gate dielectric and metal gate electrode integration. Using TCAD simulation, a trade-off study between series resistance and overlap capacitance is carried out for a high-k dielectric surrounding gate structure, which results from the replacement process. An optimum S/D overlap to gate for the high-k surrounding gate structure is found to be different from the conventional gate structure, i.e. 0∼1 nm underlap is preferred for the surround high-k gate structure while 1∼2 nm overlap for the conventional gate one

  1. Suppression of subthreshold characteristics variation for junctionless multigate transistors using high-k spacers

    International Nuclear Information System (INIS)

    Lou, Haijun; Zhang, Baili; Li, Dan; Lin, Xinnan; He, Jin; Chan, Mansun

    2015-01-01

    In this work, the high-k spacer is proposed to suppress the subthreshold characteristics variation of junctionless multigate transistor (JMT) with non-ideal sidewall angle for the first time. It is demonstrated that the variation of subthreshold characteristics induced by the changing sidewall angle is efficiently suppressed by high-k spacers due to the enhanced corner effect through the fringe capacitance, and the electrostatic integrity of JMTs is also improved at sub-22 nm gate length. Two key parameters of high-k spacer, the thickness and length, have been optimized in terms of the suppression of subthreshold characteristics variation. Then their optimal values are proposed. The benefit of high-k spacer makes JMTs more scalable. (paper)

  2. Reaching state-of-the art requirements for MIM capacitors with a single-layer anodic Al2O3 dielectric and imprinted electrodes

    Science.gov (United States)

    Hourdakis, Emmanouel; Nassiopoulou, Androula G.

    2017-07-01

    Metal-Insulator-Metal (MIM) capacitors with a high capacitance density and low non-linearity coefficient using a single-layer dielectric of barrier-type anodic alumina (Al2O3) and an imprinted bottom Al electrode are presented. Imprinting of the bottom electrode aimed at increasing the capacitor effective surface area by creating a three-dimensional MIM capacitor architecture. The bottom Al electrode was only partly nanopatterned so as to ensure low series resistance of the MIM capacitor. With a 3 nm thick anodic Al2O3 dielectric, the capacitor with the imprinted electrode showed a 280% increase in capacitance density compared to the flat electrode capacitor, reaching a value of 20.5 fF/μm2. On the other hand, with a 30 nm thick anodic Al2O3 layer, the capacitance density was 7.9 fF/μm2 and the non-linearity coefficient was as low as 196 ppm/V2. These values are very close to reaching all requirements of the last International Technology Roadmap for Semiconductors for MIM capacitors [ITRS, http://www.itrs2.net/2013-itrs.html for ITRS Roadmap (2013)], and they are achieved by a single-layer dielectric instead of the complicated dielectric stacks of the literature. The obtained results constitute a real progress compared to previously reported results by our group for MIM capacitors using imprinted electrodes.

  3. Determination of the enthalpy of vaporization and prediction of surface tension for ionic liquid 1-alkyl-3-methylimidazolium propionate [C(n)mim][Pro](n = 4, 5, 6).

    Science.gov (United States)

    Tong, Jing; Yang, Hong-Xu; Liu, Ru-Jing; Li, Chi; Xia, Li-Xin; Yang, Jia-Zhen

    2014-11-13

    With the use of isothermogravimetrical analysis, the enthalpies of vaporization, Δ(g)lH(o)m(T(av)), at the average temperature, T(av) = 445.65 K, for the ionic liquids (ILs) 1-alkyl-3-methylimidazolium propionate [C(n)mim][Pro](n = 4, 5, 6) were determined. Using Verevkin's method, the difference of heat capacities between the vapor phase and the liquid phase, Δ(g)lC(p)(o)m, for [C(n)mim][Pro](n = 2, 3, 4, 5, 6), were calculated based on the statistical thermodynamics. Therefore, with the use of Δ(g)lC(p)(o)m, the values of Δ(g)lH(o)m(T(av)) were transformed into Δ(g)lH(o)m(298), 126.8, 130.3, and 136.5 for [C(n)mim][Pro](n = 4, 5, 6), respectively. In terms of the new scale of polarity for ILs, the order of the polarity of [C(n)mim][Pro](n = 2, 3, 4, 5, 6) was predicted, that is, the polarity decreases with increasing methylene. A new model of the relationship between the surface tension and the enthalpy of vaporization for aprotic ILs was put forward and used to predict the surface tension for [C(n)mim][Pro](n = 2, 3, 4, 5, 6) and others. The predicted surface tension for the ILs is in good agreement with the experimental one.

  4. Study of high-k gate dielectrics by means of positron annihilation

    International Nuclear Information System (INIS)

    Uedono, A.; Naito, T.; Otsuka, T.; Ito, K.; Shiraishi, K.; Yamabe, K.; Miyazaki, S.; Watanabe, H.; Umezawa, N.; Hamid, A.; Chikyow, T.; Ohdaira, T.; Suzuki, R.; Ishibashi, S.; Inumiya, S.; Kamiyama, S.; Akasaka, Y.; Nara, Y.; Yamada, K.

    2007-01-01

    High-dielectric constant (high-k) gate materials, such as HfSiO x and HfAlO x , fabricated by atomic-layer-deposition techniques were characterized using monoenergetic positron beams. Measurements of the Doppler broadening spectra of annihilation radiation and the lifetime spectra of positrons indicated that positrons annihilated from the trapped state by open volumes that exist intrinsically in amorphous structures of the films. The size distributions of the open volumes and the local atomic configurations around such volumes can be discussed using positron annihilation parameters, and they were found to correlate with the electrical properties of the films. We confirmed that the positron annihilation is useful technique to characterize the matrix structure of amorphous high-k materials, and can be used to determine process parameters for the fabrication of high-k gate dielectrics. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Multi-quasiparticle high-K isomeric states in deformed nuclei

    Directory of Open Access Journals (Sweden)

    Xu F. R.

    2016-01-01

    Full Text Available In the past years, we have made many theoretical investigations on multi-quasiparticle high-K isomeric states. A deformation-pairing-configuration self-consistent calculation has been developed by calculating a configuration-constrained multi-quasiparticle potential energy surface (PES. The specific single-particle orbits that define the high-K configuration are identified and tracked (adiabatically blocked by calculating the average Nilsson numbers. The deformed Woods-Saxon potential was taken to give single-particle orbits. The configuration-constrained PES takes into account the shape polarization effect. Such calculations give good results on excitation energies, deformations and other structure information about multi-quasiparticle high-K isomeric states. Many different mass regions have been investigated.

  6. Effects of high-order deformation on high-K isomers in superheavy nuclei

    International Nuclear Information System (INIS)

    Liu, H. L.; Bertulani, C. A.; Xu, F. R.; Walker, P. M.

    2011-01-01

    Using, for the first time, configuration-constrained potential-energy-surface calculations with the inclusion of β 6 deformation, we find remarkable effects of the high-order deformation on the high-K isomers in 254 No, the focus of recent spectroscopy experiments on superheavy nuclei. For shapes with multipolarity six, the isomers are more tightly bound and, microscopically, have enhanced deformed shell gaps at N=152 and Z=100. The inclusion of β 6 deformation significantly improves the description of the very heavy high-K isomers.

  7. Identicity in high-K three quasiparticle rotational bands: a theoretical approach

    International Nuclear Information System (INIS)

    Kaur, Harjeet; Singh, Pardeep; Malik, Sham S

    2015-01-01

    The systematics are studied for the identical band phenomenon in high-K three quasiparticle rotational bands. The identical rotational bands based on the same bandhead spin are analyzed on the basis of similarities in γ-ray energies, dynamic moment of inertia and kinematic moment of inertia in particular, which is a function of deformation degrees of freedom, pairing strengths and Nilsson orbitals in nuclei. It is established that a combined effect of all these parameters decides the identicity of the moment of inertia in high-K three quasiparticle rotational bands as the systematics are backed by the Tilted Axis Cranking model calculations. (paper)

  8. Towards low-voltage organic thin film transistors (OTFTs with solution-processed high-k dielectric and interface engineering

    Directory of Open Access Journals (Sweden)

    Yaorong Su

    2015-11-01

    Full Text Available Although impressive progress has been made in improving the performance of organic thin film transistors (OTFTs, the high operation voltage resulting from the low gate capacitance density of traditional SiO2 remains a severe limitation that hinders OTFTs'development in practical applications. In this regard, developing new materials with high-k characteristics at low cost is of great scientific and technological importance in the area of both academia and industry. Here, we introduce a simple solution-based technique to fabricate high-k metal oxide dielectric system (ATO at low-temperature, which can be used effectively to realize low-voltage operation of OTFTs. On the other hand, it is well known that the properties of the dielectric/semiconductor and electrode/semiconductor interfaces are crucial in controlling the electrical properties of OTFTs. By optimizing the above two interfaces with octadecylphosphonic acid (ODPA self-assembled monolayer (SAM and properly modified low-cost Cu, obviously improved device performance is attained in our low-voltage OTFTs. Further more, organic electronic devices on flexible substrates have attracted much attention due to their low-cost, rollability, large-area processability, and so on. Basing on the above results, outstanding electrical performance is achieved in flexible devices. Our studies demonstrate an effective way to realize low-voltage, high-performance OTFTs at low-cost.

  9. Accelerated life testing and reliability of high K multilayer ceramic capacitors

    Science.gov (United States)

    Minford, W. J.

    1981-01-01

    The reliability of one lot of high K multilayer ceramic capacitors was evaluated using accelerated life testing. The degradation in insulation resistance was characterized as a function of voltage and temperature. The times to failure at a voltage-temperature stress conformed to a lognormal distribution with a standard deviation approximately 0.5.

  10. Intermodulation Linearity in High-k/Metal Gate 28 nm RF CMOS Transistors

    Directory of Open Access Journals (Sweden)

    Zhen Li

    2015-09-01

    Full Text Available This paper presents experimental characterization, simulation, and Volterra series based analysis of intermodulation linearity on a high-k/metal gate 28 nm RF CMOS technology. A figure-of-merit is proposed to account for both VGS and VDS nonlinearity, and extracted from frequency dependence of measured IIP3. Implications to biasing current and voltage optimization for linearity are discussed.

  11. High-k shallow traps observed by charge pumping with varying discharging times

    International Nuclear Information System (INIS)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen; Chang, Ting-Chang; Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju; Wang, Bin-Wei; Cao, Xi-Xin; Chen, Hua-Mao; Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu

    2013-01-01

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO 2 /metal gate stacks. N T -V high level characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N T for extra contribution of I cp traps. N T is the number of traps, and I cp is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I cp traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti x N 1−x metal gate concentrations. Next, N T -V high level characteristic curves with different falling times (t falling time ) and base level times (t base level ) show that extra contribution of I cp traps decrease with an increase in t falling time . By fitting discharge formula for different t falling time , the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t falling time . This current cannot be measured by the charge pumping technique. Subsequent measurements of N T by charge pumping technique at t base level reveal a remainder of electrons trapped in high-k bulk shallow traps

  12. Safety and efficacy of MIM D3 ophthalmic solutions in a randomized placebo controlled Phase 2 clinical trial in patients with dry eye

    Directory of Open Access Journals (Sweden)

    Meerovitch K

    2013-06-01

    Full Text Available Karen Meerovitch,1 Gail Torkildsen,2 John Lonsdale,3 Heidi Goldfarb,4 Teresa Lama,1 Garth Cumberlidge,1 George W Ousler III5 1Mimetogen Pharmaceuticals Inc, Montreal, QC, Canada; 2Andover Eye Associates, Andover, MA, USA; 3Central Maine Eye Care, Lewiston, ME, USA; 4SDC, Tempe, AZ, USA; 5Ora Inc, Andover, MA, USA Purpose: To evaluate the safety and efficacy of ophthalmic MIM-D3, a tyrosine kinase TrkA receptor agonist, in patients with dry eye. Design: A prospective, two-center, randomized, double-masked, placebo-controlled Phase 2 study. Methods: A total of 150 dry eye patients were randomized 1:1:1 to study medication (1% MIM-D3, 5% MIM-D3, or placebo and dosed twice daily (BID for 28 days. Key eligibility criteria included exacerbation in corneal staining and ocular discomfort in the Controlled Adverse Environment (CAESM on two visits, separated by 1 week of BID dosing with artificial tears. Safety and efficacy were evaluated at baseline, throughout treatment, and for 2 weeks post-treatment. The pre-specified primary outcome measures were fluorescein corneal staining post-CAE at day 28 and diary worst symptom scores over 28 days. Secondary outcomes included the pre-, post-, and the change from pre- to post-CAE fluorescein and lissamine green staining in both corneal and conjunctival regions, as well as individual diary symptoms. Results: The prespecified primary endpoints were not met. Compared with placebo, fluorescein corneal staining at day 28 was significantly improved (P < 0.05 in the 1% MIM-D3 group for the assessment of change from pre-CAE to post-CAE. In addition, following CAE exposure, patients in the 1% MIM-D3 group showed significant improvements versus placebo (P < 0.05 in inferior fluorescein and lissamine green staining after 14 and 28 days. Compared with placebo, patients in the 5% MIM-D3 group reported significantly lower daily diary scores for ocular dryness (P < 0.05. In a subgroup defined by higher symptom scores during

  13. Optical rectification through an Al 2 O 3 based MIM passive rectenna at 28.3 THz

    KAUST Repository

    Jayaswal, Gaurav

    2017-11-21

    Harevesting energy from waste heat which fluctuates between, approximately, 250 K and 1500 K, i.e., peaking at 2–11 μm, could be a game changer in terms of tapping on to renewable energy sources. However, research in this area has remained elusive due to numerous challenges. We consider waste heat to be an electromagnetic (EM) wave in the mid infrared (IR) frequency range, which can be captured through a resonant antenna and rectified into useful DC through a diode, an arrangement typically known as a rectenna. A bowtie antenna has been optimized for IR field capture and enhancement through EM simulations. At the overlap of the bowtie arms, a metal-insulator-metal (MIM) diode has been realized that can operate at such a high frequency (28.3 THz or 10.6 μm). The choice of a low permittivity insulator (Al2O3) helps metigate the RC time constant and the diode\\'s cutoff frequency, whereas the two different work function metals, Au and Ti, facilitate diode operation through tunneling at no applied bias. A custom optical characterization setup employing a 10.6 μm CO2 laser has been used to assess the IR capture and rectification ability of the rectenna device. A polarization dependent voltage output which is well above the noise level and well matched with our calculations, confirms the successful rectenna operation. According to authors\\' best knowledge, this is the first demonstration of rectification at 28.3 THz through a MIM diode based rectenna at zero applied bias.

  14. High-K rotational bands in {sup 174}Hf and {sup 175}Hf

    Energy Technology Data Exchange (ETDEWEB)

    Gjoerup, N L; Sletten, G [The Niels Bohr Institute, Roskilbe (Denmark); Walker, P M [Surrey Univ., Guildford (United Kingdom). Dept. of Physics; Bentley, M A [Daresbury Lab. (United Kingdom); Cullen, D M; Sharpey-Schafer, J F; Fallon, P; Smith, G [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.

    1992-08-01

    High sensitivity experiments with {sup 48}Ca, {sup 18}O and {sup 9}Be induced reactions using the ESSA-30, TESSA-3 and NORDBALL arrays have provided extensive new information on the high spin level structures of {sup 174}Hf and {sup 175}Hf. During the series of experiments, several new bands have been found and most known bands have been extended considerably. Spin and excitation energy ranges for {sup 174}Hf are now {approx} 35 {Dirac_h} and {approx} 13 MeV, respectively, and for {sup 175}Hf ranges are {approx} 30 {Dirac_h} and {approx} 7 MeV. respectively. Several new high-K structures have been found in {sup 174}Hf and the structure of these and the already known high-K bands in both nuclei together with the new Tilted Axis Cranking approach might explain the small K-hindrances observed for K-isomers in this region. (author). 8 refs., 2 figs.

  15. Fabrication of Nonvolatile Memory Effects in High-k Dielectric Thin Films Using Electron Irradiation

    International Nuclear Information System (INIS)

    Park, Chanrock; Cho, Daehee; Kim, Jeongeun; Hwang, Jinha

    2010-01-01

    Electron Irradiation can be applied towards nano-floating gate memories which are recognized as one of the next-generation nonvolatile memory semiconductors. NFGMs can overcome the preexisting limitations encountered in Dynamic Random Access Memories and Flash memories with the excellent advantages, i. e. high-density information storage, high response speed, high compactness, etc. The traditional nano-floating gate memories are fabricated through multi-layered nano structures of the dissimilar materials where the charge-trapping portions are sandwiched into the high-k dielectrics. However, this work reports the unique nonvolatile responses in single-layered high-k dielectric thin films if irradiated with highly accelerated electron beams. The implications of the electron irradiation will be discussed towards high-performance nano-floating gate memories

  16. Measurement of spatial and temporal variation in volatile hazardous air pollutants in Tacoma, Washington, using a mobile membrane introduction mass spectrometry (MIMS) system.

    Science.gov (United States)

    Davey, Nicholas G; Fitzpatrick, Cole T E; Etzkorn, Jacob M; Martinsen, Morten; Crampton, Robert S; Onstad, Gretchen D; Larson, Timothy V; Yost, Michael G; Krogh, Erik T; Gilroy, Michael; Himes, Kathy H; Saganić, Erik T; Simpson, Christopher D; Gill, Christopher G

    2014-09-19

    The objective of this study was to use membrane introduction mass spectrometry (MIMS), implemented on a mobile platform, in order to provide real-time, fine-scale, temporally and spatially resolved measurements of several hazardous air pollutants. This work is important because there is now substantial evidence that fine-scale spatial and temporal variations of air pollutant concentrations are important determinants of exposure to air pollution and adverse health outcomes. The study took place in Tacoma, WA during periods of impaired air quality in the winter and summer of 2008 and 2009. Levels of fine particles were higher in winter compared to summer, and were spatially uniform across the study area. Concentrations of vapor phase pollutants measured by membrane introduction mass spectrometry (MIMS), notably benzene and toluene, had relatively uniform spatial distributions at night, but exhibited substantial spatial variation during the day-daytime levels were up to 3-fold higher at traffic-impacted locations compared to a reference site. Although no direct side-by-side comparison was made between the MIMS system and traditional fixed site monitors, the MIMS system typically reported higher concentrations of specific VOCs, particularly benzene, ethylbenzene and naphthalene, compared to annual average concentrations obtained from SUMA canisters and gas chromatographic analysis at the fixed sites.

  17. High-k shallow traps observed by charge pumping with varying discharging times

    Energy Technology Data Exchange (ETDEWEB)

    Ho, Szu-Han; Chen, Ching-En; Tseng, Tseung-Yuen [Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang@mail.phys.nsysu.edu.tw [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan (China); Lu, Ying-Hsin; Lo, Wen-Hung; Tsai, Jyun-Yu; Liu, Kuan-Ju [Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan (China); Wang, Bin-Wei; Cao, Xi-Xin [Department of Embedded System Engineering, Peking University, Beijing, P.R.China (China); Chen, Hua-Mao [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Cheng, Osbert; Huang, Cheng-Tung; Chen, Tsai-Fu [Device Department, United Microelectronics Corporation, Tainan Science Park, Taiwan (China)

    2013-11-07

    In this paper, we investigate the influence of falling time and base level time on high-k bulk shallow traps measured by charge pumping technique in n-channel metal-oxide-semiconductor field-effect transistors with HfO{sub 2}/metal gate stacks. N{sub T}-V{sub high} {sub level} characteristic curves with different duty ratios indicate that the electron detrapping time dominates the value of N{sub T} for extra contribution of I{sub cp} traps. N{sub T} is the number of traps, and I{sub cp} is charge pumping current. By fitting discharge formula at different temperatures, the results show that extra contribution of I{sub cp} traps at high voltage are in fact high-k bulk shallow traps. This is also verified through a comparison of different interlayer thicknesses and different Ti{sub x}N{sub 1−x} metal gate concentrations. Next, N{sub T}-V{sub high} {sub level} characteristic curves with different falling times (t{sub falling} {sub time}) and base level times (t{sub base} {sub level}) show that extra contribution of I{sub cp} traps decrease with an increase in t{sub falling} {sub time}. By fitting discharge formula for different t{sub falling} {sub time}, the results show that electrons trapped in high-k bulk shallow traps first discharge to the channel and then to source and drain during t{sub falling} {sub time}. This current cannot be measured by the charge pumping technique. Subsequent measurements of N{sub T} by charge pumping technique at t{sub base} {sub level} reveal a remainder of electrons trapped in high-k bulk shallow traps.

  18. High-K structures in {sup 180}W and {sup 181}W

    Energy Technology Data Exchange (ETDEWEB)

    Yeung, K C; Walker, P M; Singleton, B D.D. [Surrey Univ., Guildford (United Kingdom). Dept. of Physics; Urban, W; Lisle, J C; Copnell, J; Mo, J N [Manchester Univ. (United Kingdom). Schuster Lab.; Joyce, M J [Liverpool Univ. (United Kingdom). Oliver Lodge Lab.; Gjorup, N L; Sletten, G [Risoe National Lab., Roskilde (Denmark)

    1992-08-01

    In each of the prolate-deformed isotopes {sup 180}W and {sup 181}W, a very high-K non-collective state has been found which decays directly into the corresponding collective ground-state rotational band. There is complete breakdown of the K-selection rule, in contrast to the partial breakdown observed recently in {sup 174}Hf and {sup 182}Os. Nevertheless, the non-collective states themselves retain characteristics associated with a prolate axially symmetric shape, implying that K is still a useful quantum number. (author). 17 refs., 2 figs.

  19. The effect of injection of high K+ solution into scala media.

    Science.gov (United States)

    Fukazawa, T; Ohmura, M; Yagi, N

    1987-01-01

    Thirty guinea pig ears were studied to investigate the effect of endolymphatic hydrops on the cochlea. High K+ solution was injected into the scala media, and cochlear microphonics (CM) and endocochlear potential (EP) were observed before, during and after the injection. The CM amplitude decreased rapidly after injection, ending in a depressed plateau value. By contrast, EP remained almost unchanged. By changing the composition of the solution it was suggested that the effect of the injection was mechanical one, rather than biochemical. In three ears, spontaneous recovery of CM was observed during a relatively long interval after the injection. The meaning of these findings for the hearing loss in Meniere's disease is discussed.

  20. Design, Fabrication and Characterization of MIM Diodes and Frequency Selective Thermal Emitters for Solar Energy Harvesting and Detection Devices

    Science.gov (United States)

    Sharma, Saumya

    Energy harvesting using rectennas for infrared radiation continues to be a challenge due to the lack of fast switching diodes capable of rectification at THz frequencies. Metal insulator metal diodes which may be used at 30 THz must show adequate nonlinearity for small signal rectification such as 30 mV. In a rectenna assembly, the voltage signal received as an output from a single nanoantenna can be as small as ~30microV. Thus, only a hybrid array of nanoantennas can be sufficient to provide a signal in the ~30mV range for the diode to be able to rectify around 30THz. A metal-insulator-metal diode with highly nonlinear I-V characteristics is required in order for such small signal rectification to be possible. Such diode fabrication was found to be faced with two major fabrication challenges. The first one being the lack of a precisely controlled deposition process to allow a pinhole free insulator deposition less than 3nm in thickness. Another major challenge is the deposition of a top metal contact on the underlying insulating thin film. As a part of this research study, most of the MIM diodes were fabricated using Langmuir Blodgett monolayers deposited on a thin Ni film that was sputter coated on a silicon wafer. UV induced polymerization of the Langmuir Blodgett thin film was used to allow intermolecular crosslinking. A metal top contact was sputtered onto the underlying Langmuir Blodgett film assembly. In addition to material characterization of all the individual films using IR, UV-VIS spectroscopy, electron microscopy and atomic force microscopy, the I-V characteristics, resistance, current density, rectification ratio and responsivity with respect to the bias voltage were also measured for the electrical characterization of these MIM diodes. Further improvement in the diode rectification ratio and responsivity was obtained with Langmuir Blodgett films grown by the use of horizontally oriented organic molecules, due to a smaller tunneling distance that

  1. Autolytic activity of human calpain 7 is enhanced by ESCRT-III-related protein IST1 through MIT-MIM interaction.

    Science.gov (United States)

    Osako, Yohei; Maemoto, Yuki; Tanaka, Ryohei; Suzuki, Hironori; Shibata, Hideki; Maki, Masatoshi

    2010-11-01

    Calpain 7, a mammalian ortholog of yeast Cpl1/Rim13 and fungal PalB, is an atypical calpain that lacks a penta-EF-hand domain. Previously, we reported that a region containing a tandem repeat of microtubule-interacting and transport (MIT) domains in calpain 7 interacts with a subset of endosomal sorting complex required for transport (ESCRT)-III-related proteins, suggesting involvement of calpain 7 in the ESCRT system. Although yeast and fungal calpains are thought to be involved in alkaline adaptation via limited proteolysis of specific transcription factors, proteolytic activity of calpain 7 has not been demonstrated yet. In this study, we investigated the interaction between calpain 7 and a newly reported ESCRT-III family member, increased sodium tolerance-1 (IST1), which possesses two different types of MIT-interacting motifs (MIM1 and MIM2). We found that glutathione-S-transferase (GST)-fused tandem MIT domains of calpain 7 (calpain 7MIT) pulled down FLAG-tagged IST1 expressed in HEK293T cells. Coimmunoprecipitation assays with various deletion or point mutants of epitope-tagged calpain 7 and IST1 revealed that both repetitive MIT domains and MIMs are required for efficient interaction. Direct MIT-MIM binding was confirmed by a pulldown experiment with GST-fused IST1 MIM and purified recombinant calpain 7MIT. Furthermore, we found that the GST-MIM protein enhances the autolysis of purified Strep-tagged monomeric green fluorescent protein (mGFP)-fused calpain 7 (mGFP-calpain 7-Strep). The autolysis was almost completely abolished by 10 mmN-ethylmaleimide but only partially inhibited by 1 mm leupeptin or E-64. The putative catalytic Cys290-substituted mutant (mGFP-calpain 7(C290S)-Strep) showed no autolytic activity. These results demonstrate for the first time that human calpain 7 is proteolytically active, and imply that calpain 7 is activated in the ESCRT system. © 2010 The Authors Journal compilation © 2010 FEBS.

  2. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Quasi-particle and collective magnetism: Rotation, pairing and blocking in high-K isomers

    International Nuclear Information System (INIS)

    Stone, N.J.; Stone, J.R.; Walker, P.M.; Bingham, C.R.

    2013-01-01

    For the first time, a wide range of collective magnetic g-factors g R , obtained from a novel analysis of experimental data for multi-quasi-particle configurations in high-K isomers, is shown to exhibit a striking systematic variation with the relative number of proton and neutron quasi-particles, N p −N n . Using the principle of additivity, the quasi-particle contribution to magnetism in high-K isomers of Lu–Re, Z=71–75, has been estimated. Based on these estimates, band-structure branching ratio data are used to explore the behavior of the collective contribution as the number and proton/neutron nature (N p , N n ), of the quasi-particle excitations, change. Basic ideas of pairing, its quenching by quasi-particle excitation and the consequent changes to moment of inertia and collective magnetism are discussed. Existing model calculations do not reproduce the observed g R variation adequately. The paired superfluid system of nucleons in these nuclei, and their excitations, present properties of general physics interest. The new-found systematic behavior of g R in multi-quasi-particle excitations of this unique system, showing variation from close to zero for multi-neutron states to above 0.5 for multi-proton states, opens a fresh window on these effects and raises the important question of just which nucleons contribute to the ‘collective’ properties of these nuclei

  4. Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

    International Nuclear Information System (INIS)

    Afifah Maheran A H; Menon P S; Shaari, S; Elgomati, H A; Salehuddin, F; Ahmad, I

    2013-01-01

    In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO 2 ), while the metal gate is Tungsten Silicide (WSi x ). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (V th ). The objective of this experiment is to minimize the variance of V th where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of V th . The results show that the V th values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

  5. Not only resisting, but also advancing: from the boycott of Minha Senhora de Mim to its canonization

    Directory of Open Access Journals (Sweden)

    Ana Bárbara Pedrosa

    2017-08-01

    Full Text Available In this article, we will analyze how Minha Senhora de Mim (1971, by Maria Teresa Horta, confronted the dictatorship that was its zeitgeist, starting from the way she used canonical literature and literary traditional to challenge a specific status quo, bringing a new model of relationships between sexes to literature, contrasting with the politics Estado Novo was imposing, that were constitutionally safeguarded, claiming to women the right both to sexual pleasure and to a place in society that was not limited to being adjunctive. The way literary traditional was challenged will get some attention, since it is done through the subversion of the content of medieval cantigas de amigo. In a second part, we will analyze not only the context of the literary work creation, but also the consequent action of PIDE. Finally, we will analyze the role of the political policy as far as the boycott of this book and the literary career of the author are concerned, trying to understand if it was successful, as well as the role this work plays in the Portuguese literary canon.

  6. Integration issues of high-k and metal gate into conventional CMOS technology

    International Nuclear Information System (INIS)

    Song, S.C.; Zhang, Z.; Huffman, C.; Bae, S.H.; Sim, J.H.; Kirsch, P.; Majhi, P.; Moumen, N.; Lee, B.H.

    2006-01-01

    Issues surrounding the integration of Hf-based high-k dielectrics with metal gates in a conventional CMOS flow are discussed. The careful choice of a gate stack process as well as optimization of other CMOS process steps enables robust CMOSFETs with a wide process latitude. HfO 2 of a 2 nm physical thickness shows complete suppression of transient charge trapping resulting from a significant reduction in film volume as well as kinetically suppressed crystallization. Metal thickness is also critical when optimizing physical stress effects and minimizing dopant diffusion. A high temperature anneal after source and drain implantation in a conventional CMOSFET process reduces the interface state density and improves electron mobility

  7. Pairing and Blocking in High-K Isomers: Variation of the Collective Parameter gR

    Directory of Open Access Journals (Sweden)

    Stone N.J.

    2013-12-01

    Full Text Available Using the principle of additivity, the quasi-particle contribution to magnetism in high-K isomers of Lu - Re has been estimated. Based on these estimates band structure branching ratio data is used to explore the behavior of the collective contribution as the number and neutron/proton nature (Np, Nn, of the quasi-particle excitations, change. A striking systematic variation of the collective g-factor gR with the difference, Np – Nn, is revealed. Basic ideas of pairing, its quenching by quasi-particle excitation and the consequent changes to moment of inertia and collective magnetism are discussed. The new found systematic behaviour of gR opens a fresh window on these effects amenable to detailed theoretical investigation.

  8. Maintaining K+ balance on the low-Na+, high-K+ diet

    Science.gov (United States)

    Cornelius, Ryan J.; Wang, Bangchen; Wang-France, Jun

    2016-01-01

    A low-Na+, high-K+ diet (LNaHK) is considered a healthier alternative to the “Western” high-Na+ diet. Because the mechanism for K+ secretion involves Na+ reabsorptive exchange for secreted K+ in the distal nephron, it is not understood how K+ is eliminated with such low Na+ intake. Animals on a LNaHK diet produce an alkaline load, high urinary flows, and markedly elevated plasma ANG II and aldosterone levels to maintain their K+ balance. Recent studies have revealed a potential mechanism involving the actions of alkalosis, urinary flow, elevated ANG II, and aldosterone on two types of K+ channels, renal outer medullary K+ and large-conductance K+ channels, located in principal and intercalated cells. Here, we review these recent advances. PMID:26739887

  9. Elemental maps in human allantochorial placental vessels cells: 1. High K{sup +} and acetylcholine effects

    Energy Technology Data Exchange (ETDEWEB)

    Michelet-Habchi, C. E-mail: michelet@cenbg.in2p3.fr; Barberet, Ph.; Dutta, R.K.; Guiet-Bara, A.; Bara, M.; Moretto, Ph

    2003-09-01

    Regulation of vascular tone in the fetal extracorporeal circulation most likely depends on circulating hormones, local paracrine mechanisms and changes in membrane potential of vascular smooth muscle cells (VSMCs) and of vascular endothelial cells (VECs). The membrane potential is a function of the physiological activities of ionic channels (particularly, K{sup +} and Ca{sup 2+} channels in these cells). These channels regulate the ionic distribution into these cells. Micro-particle induced X-ray emission (PIXE) analysis was applied to determine the ionic composition of VSMC and of VEC in the placental human allantochorial vessels in a physiological survival medium (Hanks' solution) modified by the addition of acetylcholine (ACh: which opens the calcium-sensitive K{sup +} channels, K{sub Ca}) and of high concentration of K{sup +} (which blocks the voltage-sensitive K{sup +} channels, K{sub df}). In VSMC (media layer), the addition of ACh induced no modification of the Na, K, Cl, P, S, Mg and Ca concentrations and high K{sup +} medium increased significantly the Cl and K concentrations, the other ion concentrations remaining constant. In endothelium (VEC), ACh addition implicated a significant increase of Na and K concentration, and high K{sup +} medium, a significant increase in Cl and K concentration. These results indicated the importance of K{sub df}, K{sub Ca} and K{sub ATP} channels in the regulation of K{sup +} intracellular distribution in VSMC and VEC and the possible intervention of a Na-K-2Cl cotransport and corroborated the previous electrophysiological data.

  10. Transfer-Free Fabrication of Graphene Scaffolds on High-k Dielectrics from Metal-Organic Oligomers.

    Science.gov (United States)

    Pang, Qingqing; Wang, Deyan; Wang, Xiuyan; Feng, Shaoguang; Clark, Michael B; Li, Qiaowei

    2016-09-28

    In situ fabrication of graphene scaffold-ZrO2 nanofilms is achieved by thermal annealing of Zr-based metal-organic oligomers on SiO2 substrates. The structural similarities of the aromatic moieties in the ligand (phenyl-, naphthyl-, anthryl-, and pyrenyl-) compared to graphene play a major role in the ordering of the graphene scaffolds obtained. The depth profiling analysis reveals ultrathin carbon-pure or carbon-rich surfaces of the graphene scaffold-ZrO2 nanofilms. The graphene scaffolds with ∼96.0% transmittance in the visible region and 4.8 nm in thickness can be grown with this non-chemical vapor deposition method. Furthermore, the heterogeneous graphene scaffold-ZrO2 nanofilms show a low sheet resistance of 17.0 kΩ per square, corresponding to electrical conductivity of 3197 S m(-1). The strategy provides a facile method to fabricate graphene scaffolds directly on high-k dielectrics without transferring process, paving the way for its application in fabricating electronic devices.

  11. SU-E-J-89: Comparative Analysis of MIM and Velocity’s Image Deformation Algorithm Using Simulated KV-CBCT Images for Quality Assurance

    Energy Technology Data Exchange (ETDEWEB)

    Cline, K; Narayanasamy, G; Obediat, M; Stanley, D; Stathakis, S; Kirby, N [University of Texas Health Science Center at San Antonio, Cancer Therapy and Research Center, San Antonio, TX (United States); Kim, H [University of California San Francisco, San Francisco, CA (United States)

    2015-06-15

    Purpose: Deformable image registration (DIR) is used routinely in the clinic without a formalized quality assurance (QA) process. Using simulated deformations to digitally deform images in a known way and comparing to DIR algorithm predictions is a powerful technique for DIR QA. This technique must also simulate realistic image noise and artifacts, especially between modalities. This study developed an algorithm to create simulated daily kV cone-beam computed-tomography (CBCT) images from CT images for DIR QA between these modalities. Methods: A Catphan and physical head-and-neck phantom, with known deformations, were used. CT and kV-CBCT images of the Catphan were utilized to characterize the changes in Hounsfield units, noise, and image cupping that occur between these imaging modalities. The algorithm then imprinted these changes onto a CT image of the deformed head-and-neck phantom, thereby creating a simulated-CBCT image. CT and kV-CBCT images of the undeformed and deformed head-and-neck phantom were also acquired. The Velocity and MIM DIR algorithms were applied between the undeformed CT image and each of the deformed CT, CBCT, and simulated-CBCT images to obtain predicted deformations. The error between the known and predicted deformations was used as a metric to evaluate the quality of the simulated-CBCT image. Ideally, the simulated-CBCT image registration would produce the same accuracy as the deformed CBCT image registration. Results: For Velocity, the mean error was 1.4 mm for the CT-CT registration, 1.7 mm for the CT-CBCT registration, and 1.4 mm for the CT-simulated-CBCT registration. These same numbers were 1.5, 4.5, and 5.9 mm, respectively, for MIM. Conclusion: All cases produced similar accuracy for Velocity. MIM produced similar values of accuracy for CT-CT registration, but was not as accurate for CT-CBCT registrations. The MIM simulated-CBCT registration followed this same trend, but overestimated MIM DIR errors relative to the CT

  12. SU-E-J-89: Comparative Analysis of MIM and Velocity’s Image Deformation Algorithm Using Simulated KV-CBCT Images for Quality Assurance

    International Nuclear Information System (INIS)

    Cline, K; Narayanasamy, G; Obediat, M; Stanley, D; Stathakis, S; Kirby, N; Kim, H

    2015-01-01

    Purpose: Deformable image registration (DIR) is used routinely in the clinic without a formalized quality assurance (QA) process. Using simulated deformations to digitally deform images in a known way and comparing to DIR algorithm predictions is a powerful technique for DIR QA. This technique must also simulate realistic image noise and artifacts, especially between modalities. This study developed an algorithm to create simulated daily kV cone-beam computed-tomography (CBCT) images from CT images for DIR QA between these modalities. Methods: A Catphan and physical head-and-neck phantom, with known deformations, were used. CT and kV-CBCT images of the Catphan were utilized to characterize the changes in Hounsfield units, noise, and image cupping that occur between these imaging modalities. The algorithm then imprinted these changes onto a CT image of the deformed head-and-neck phantom, thereby creating a simulated-CBCT image. CT and kV-CBCT images of the undeformed and deformed head-and-neck phantom were also acquired. The Velocity and MIM DIR algorithms were applied between the undeformed CT image and each of the deformed CT, CBCT, and simulated-CBCT images to obtain predicted deformations. The error between the known and predicted deformations was used as a metric to evaluate the quality of the simulated-CBCT image. Ideally, the simulated-CBCT image registration would produce the same accuracy as the deformed CBCT image registration. Results: For Velocity, the mean error was 1.4 mm for the CT-CT registration, 1.7 mm for the CT-CBCT registration, and 1.4 mm for the CT-simulated-CBCT registration. These same numbers were 1.5, 4.5, and 5.9 mm, respectively, for MIM. Conclusion: All cases produced similar accuracy for Velocity. MIM produced similar values of accuracy for CT-CT registration, but was not as accurate for CT-CBCT registrations. The MIM simulated-CBCT registration followed this same trend, but overestimated MIM DIR errors relative to the CT

  13. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

    2017-01-01

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  14. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.

    2017-07-27

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  15. Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

    Science.gov (United States)

    Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

    2017-05-01

    Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

  16. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-03-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  17. Gate-first integration of tunable work function metal gates of different thicknesses into high-k metal gates CMOS FinFETs for multi- VTh engineering

    KAUST Repository

    Hussain, Muhammad Mustafa; Smith, Casey Eben; Harris, Harlan Rusty; Young, Chadwin; Tseng, Hsinghuang; Jammy, Rajarao

    2010-01-01

    Gate-first integration of tunable work function metal gates of different thicknesses (320 nm) into high-k/metal gates CMOS FinFETs was demonstrated to achieve multiple threshold voltages (VTh) for 32-nm technology and beyond logic, memory, input/output, and system-on-a-chip applications. The fabricated devices showed excellent short-channel effect immunity (drain-induced barrier lowering ∼ 40 mV/V), nearly symmetric VTh, low T inv(∼ 1.4 nm), and high Ion(∼780μAμm) for N/PMOS without any intentional strain enhancement. © 2006 IEEE.

  18. Psychometrics and life history strategy: the structure and validity of the High K Strategy Scale.

    Science.gov (United States)

    Copping, Lee T; Campbell, Anne; Muncer, Steven

    2014-03-22

    In this paper, we critically review the conceptualization and implementation of psychological measures of life history strategy associated with Differential K theory. The High K Strategy Scale (HKSS: Giosan, 2006) was distributed to a large British sample (n = 809) with the aim of assessing its factor structure and construct validity in relation to theoretically relevant life history variables: age of puberty, age of first sexual encounter, and number of sexual partners. Exploratory and confirmatory factor analyses indicated that the HKSS in its current form did not show an adequate statistical fit to the data. Modifications to improve fit indicated four correlated factors (personal capital, environmental stability, environmental security, and social capital). Later puberty in women was positively associated with measures of the environment and personal capital. Among men, contrary to Differential K predictions but in line with female mate preferences, earlier sexual debut and more sexual partners were positively associated with more favorable environments and higher personal and social capital. We raise concerns about the use of psychometric indicators of lifestyle and personality as proxies for life history strategy when they have not been validated against objective measures derived from contemporary life history theory and when their status as causes, mediators, or correlates has not been investigated.

  19. High-k Scattering Receiver Mixer Performance for NSTX-U

    Science.gov (United States)

    Barchfeld, Robert; Riemenschneider, Paul; Domier, Calvin; Luhmann, Neville; Ren, Yang; Kaita, Robert

    2016-10-01

    The High-k Scattering system detects primarily electron-scale turbulence k θ spectra for studying electron thermal transport in NSTX-U. A 100 mW, 693 GHz probe beam passes through plasma, and scattered power is detected by a 4-pixel quasi optical, mixer array. Remotely controlled receiving optics allows the scattering volume to be located from core to edge with a k θ span of 7 to 40 cm-1. The receiver array features 4 RF diagonal input horns, where the electric field polarization is aligned along the diagonal of a square cross section horn, at 30 mm channel spacing. The local oscillator is provided by a 14.4 GHz source followed by a x48 multiplier chain, giving an intermediate frequency of 1 GHz. The receiver optics receive 4 discreet scattering angles simultaneously, and then focus the signals as 4 parallel signals to their respective horns. A combination of a steerable probe beam, and translating receiver, allows for upward or downward scattering which together can provide information about 2D turbulence wavenumber spectrum. IF signals are digitized and stored for later computer analysis. The performance of the receiver mixers is discussed, along with optical design features to enhance the tuning and performance of the mixers. Work supported in part by U.S. DOE Grant DE-FG02-99ER54518 and DE-AC02-09CH1146.

  20. Full Polymer Dielectric Elastomeric Actuators (DEA Functionalised with Carbon Nanotubes and High-K Ceramics

    Directory of Open Access Journals (Sweden)

    Tilo Köckritz

    2016-09-01

    Full Text Available Dielectric elastomer actuators (DEA are special devices which have a simple working and construction principle and outstanding actuation properties. The DEAs consist of a combination of different materials for the dielectric and electrode layers. The combination of these layers causes incompatibilities in their interconnections. Dramatic differences in the mechanical properties and bad adhesion of the layers are the principal causes for the reduction of the actuation displacement and strong reduction of lifetime. Common DEAs achieve actuation displacements of 2% and a durability of some million cycles. The following investigations represent a new approach to solving the problems of common systems. The investigated DEA consists of only one basic raw polymer, which was modified according to the required demands of each layer. The basic raw polymer was modified with single-walled carbon nanotubes or high-k ceramics, for example, lead magnesium niobate-lead titanate. The development of the full polymer DEA comprised the development of materials and technologies to realise a reproducible layer composition. It was proven that the full polymer actuator worked according to the theoretical rules. The investigated system achieved actuation displacements above 20% regarding thickness, outstanding interconnections at each layer without any failures, and durability above 3 million cycles without any indication of an impending malfunction.

  1. Backside versus frontside advanced chemical analysis of high-k/metal gate stacks

    Energy Technology Data Exchange (ETDEWEB)

    Martinez, E., E-mail: eugenie.martinez@cea.fr [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Saidi, B. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Veillerot, M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Caubet, P. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Fabbri, J-M. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Piallat, F. [STMicroelectronics, 850 rue Jean Monnet, 38926 Rousset Cedex, Crolles (France); Gassilloud, R. [Univ Grenoble Alpes, F-38000 Grenoble (France); CEA, LETI, MINATEC Campus, F-38054 Grenoble (France); Schamm-Chardon, S. [CEMES-CNRS et Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse (France)

    2015-08-15

    Highlights: • The backside approach is a promising solution for advanced chemical characterization of future MOSFETs. • Frontside ToF-SIMS and Auger depth profiles are affected by cumulative mixing effects and thus not relevant for analyzing ultra-thin layers. • Higher in-depth resolution is possible in the backside approach for Auger and ToF-SIMS depth profiling. • Backside depth profiling allows revealing ultra-thin layers and elemental in-depth redistribution inside high-k/metal gate stacks. • Backside XPS allows preserving the full metal gate, thus enabling the analysis of real technological samples. - Abstract: Downscaling of transistors beyond the 14 nm technological node requires the implementation of new architectures and materials. Advanced characterization methods are needed to gain information about the chemical composition of buried layers and interfaces. An effective approach based on backside analysis is presented here. X-ray photoelectron spectroscopy, Auger depth profiling and time-of-flight secondary ions mass spectrometry are combined to investigate inter-diffusion phenomena. To highlight improvements related to the backside method, backside and frontside analyses are compared. Critical information regarding nitrogen, oxygen and aluminium redistribution inside the gate stacks is obtained only in the backside configuration.

  2. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  3. Surface and interfacial chemistry of high-k dielectric and interconnect materials on silicon

    Science.gov (United States)

    Kirsch, Paul Daniel

    Surfaces and interfaces play a critical role in the manufacture and function of silicon based integrated circuits. It is therefore reasonable to study the chemistries at these surfaces and interfaces to improve existing processes and to develop new ones. Model barium strontium titanate high-k dielectric systems have been deposited on ultrathin silicon oxynitride in ultrahigh vacuum. The resulting nanostructures are characterized with secondary ion mass spectroscopy (SIMS) and X-ray photoelectron spectroscopy (XPS). An interfacial reaction between Ba and Sr atoms and SiOxNy was found to create silicates, BaSixOy or SrSi xOy. Inclusion of N in the interfacial oxide decreased silicate formation in both Ba and Sr systems. Furthermore, inclusion of N in the interfacial oxide decreased the penetration of Ba and Sr containing species, such as silicides and silicates. Sputter deposited HfO2 was studied on nitrided and unnitrided Si(100) surfaces. XPS and SIMS were used to verify the presence of interfacial HfSixOy and estimate its relative amount on both nitrided and unnitrided samples. More HfSixOy formed without the SiNx interfacial layer. These interfacial chemistry results are then used to explain the electrical measurements obtained from metal oxide semiconductor (MOS) capacitors. MOS capacitors with interfacial SiNx exhibit reduced leakage current and increased capacitance. Lastly, surface science techniques were used to develop a processing technique for reducing thin films of copper (II) and copper (I) oxide to copper. Deuterium atoms (D*) and methyl radicals (CH3*) were shown to reduce Cu 2+ and/or Cu1+ to Cu0 within 30 min at a surface temperature of 400 K under a flux of 1 x 1015 atoms/cm2s. Temperature programmed desorption experiments suggest that oxygen leaves the surface as D2O and CO2 for the D* and CH3* treated surfaces, respectively.

  4. Mindfulness in Motion (MIM): An Onsite Mindfulness Based Intervention (MBI) for Chronically High Stress Work Environments to Increase Resiliency and Work Engagement

    Science.gov (United States)

    Klatt, Maryanna; Steinberg, Beth; Duchemin, Anne-Marie

    2015-01-01

    A pragmatic mindfulness intervention to benefit personnel working in chronically high-stress environments, delivered onsite during the workday, is timely and valuable to employee and employer alike. Mindfulness in Motion (MIM) is a Mindfulness Based Intervention (MBI) offered as a modified, less time intensive method (compared to Mindfulness-Based Stress Reduction), delivered onsite, during work, and intends to enable busy working adults to experience the benefits of mindfulness. It teaches mindful awareness principles, rehearses mindfulness as a group, emphasizes the use of gentle yoga stretches, and utilizes relaxing music in the background of both the group sessions and individual mindfulness practice. MIM is delivered in a group format, for 1 hr/week/8 weeks. CDs and a DVD are provided to facilitate individual practice. The yoga movement is emphasized in the protocol to facilitate a quieting of the mind. The music is included for participants to associate the relaxed state experienced in the group session with their individual practice. To determine the intervention feasibility/efficacy we conducted a randomized wait-list control group in Intensive Care Units (ICUs). ICUs represent a high-stress work environment where personnel experience chronic exposure to catastrophic situations as they care for seriously injured/ill patients. Despite high levels of work-related stress, few interventions have been developed and delivered onsite for such environments. The intervention is delivered on site in the ICU, during work hours, with participants receiving time release to attend sessions. The intervention is well received with 97% retention rate. Work engagement and resiliency increase significantly in the intervention group, compared to the wait-list control group, while participant respiration rates decrease significantly pre-post in 6/8 of the weekly sessions. Participants value institutional support, relaxing music, and the instructor as pivotal to program success

  5. Pentacene based thin film transistors with high-k dielectric Nd2O3 as a gate insulator

    International Nuclear Information System (INIS)

    Sarma, R.; Saikia, D.

    2010-01-01

    We have investigated the pentacene based Organic Thin Film Transistors (OTFTs) with high-k dielectric Nd 2 O 3 . Use of high dielectric constant (high-k) gate insulator Nd 2 O 3 reduces the threshold voltage and sub threshold swing of the OTFTs. The calculated threshold voltage -2.2V and sub-threshold swing 1V/decade, current ON-OFF ratio is 1.7 X 10 4 and mobility is 0.13cm 2 /V.s. Pentacene film is deposited on Nd 2 O 3 surface using two step deposition method. Deposited pentacene film is found poly crystalline in nature. (author)

  6. An Overview of High-k Oxides on Hydrogenated-Diamond for Metal-Oxide-Semiconductor Capacitors and Field-Effect Transistors

    Directory of Open Access Journals (Sweden)

    Jiangwei Liu

    2018-06-01

    Full Text Available Thanks to its excellent intrinsic properties, diamond is promising for applications of high-power electronic devices, ultraviolet detectors, biosensors, high-temperature tolerant gas sensors, etc. Here, an overview of high-k oxides on hydrogenated-diamond (H-diamond for metal-oxide-semiconductor (MOS capacitors and MOS field-effect transistors (MOSFETs is demonstrated. Fabrication routines for the H-diamond MOS capacitors and MOSFETs, band configurations of oxide/H-diamond heterointerfaces, and electrical properties of the MOS and MOSFETs are summarized and discussed. High-k oxide insulators are deposited using atomic layer deposition (ALD and sputtering deposition (SD techniques. Electrical properties of the H-diamond MOS capacitors with high-k oxides of ALD-Al2O3, ALD-HfO2, ALD-HfO2/ALD-Al2O3 multilayer, SD-HfO2/ALD-HfO2 bilayer, SD-TiO2/ALD-Al2O3 bilayer, and ALD-TiO2/ALD-Al2O3 bilayer are discussed. Analyses for capacitance-voltage characteristics of them show that there are low fixed and trapped charge densities for the ALD-Al2O3/H-diamond and SD-HfO2/ALD-HfO2/H-diamond MOS capacitors. The k value of 27.2 for the ALD-TiO2/ALD-Al2O3 bilayer is larger than those of the other oxide insulators. Drain-source current versus voltage curves show distinct pitch-off and p-type channel characteristics for the ALD-Al2O3/H-diamond, SD-HfO2/ALD-HfO2/H-diamond, and ALD-TiO2/ALD-Al2O3/H-diamond MOSFETs. Understanding of fabrication routines and electrical properties for the high-k oxide/H-diamond MOS electronic devices is meaningful for the fabrication of high-performance H-diamond MOS capacitor and MOSFET gas sensors.

  7. Laser Direct Writing Process for Making Electrodes and High-k Sol-Gel ZrO2 for Boosting Performances of MoS2 Transistors.

    Science.gov (United States)

    Kwon, Hyuk-Jun; Jang, Jaewon; Grigoropoulos, Costas P

    2016-04-13

    A series of two-dimensional (2D) transition metal dichalcogenides (TMDCs), including molybdenum disulfide (MoS2), can be attractive materials for photonic and electronic applications due to their exceptional properties. Among these unique properties, high mobility of 2D TMDCs enables realization of high-performance nanoelectronics based on a thin film transistor (TFT) platform. In this contribution, we report highly enhanced field effect mobility (μ(eff) = 50.1 cm(2)/(V s), ∼2.5 times) of MoS2 TFTs through the sol-gel processed high-k ZrO2 (∼22.0) insulator, compared to those of typical MoS2/SiO2/Si structures (μ(eff) = 19.4 cm(2)/(V s)) because a high-k dielectric layer can suppress Coulomb electron scattering and reduce interface trap concentration. Additionally, in order to avoid costly conventional mask based photolithography and define the patterns, we employ a simple laser direct writing (LDW) process. This process allows precise and flexible control with reasonable resolution (up to ∼10 nm), depending on the system, and enables fabrication of arbitrarily patterned devices. Taking advantage of continuing developments in laser technology offers a substantial cost decrease, and LDW may emerge as a promising technology.

  8. Comparison of the quality of the chest film between digital radiography and conventional high kV radiography

    International Nuclear Information System (INIS)

    Zeng Qingsi; Cen Renli; Chen Ling; He Jianxun; Lin Hanfei

    2003-01-01

    Objective: To evaluate the quality and usefulness of direct digital radiography system in roentgenogram of chest in clinical practice. Methods: 1000 cases of chest roentgenograms with digital radiography and high kV conventional radiography were selected for analysis by 3 senior radiologists. Results: 1. With digital radiography system, the quality of chest film was assessed as grade A in 50.6%, grade B in 38.5%, grade C in 10.9%, and no waste film. 2. With conventional high kV radiography, the quality of chest film was assessed as grade A in 41.1%, grade B in 44.1%, grade C in 13.3%, and waste film in 1.5%. The direct digital radiography was statistically superior to the conventional high kV radiography. 3. The fine structure of the lungs could be revealed in 100.0% of chest roentgenogram with direct digital radiograph system, which was significantly higher than that acquired with the conventional high KV radiography (78.6%, P < 0.001). Conclusion: Direct digital radiography could provide the chest film with better quality than that with the conventional high kV radiography. The direct digital radiography system is easy to operate, fast in capturing imaging and could provide post-processing techniques, which will facilitate the accurate diagnosis of chest radiography

  9. Implementation of a Marauding Insect Module (MIM, version 1.0) in the Integrated BIosphere Simulator (IBIS, version 2.6b4) dynamic vegetation-land surface model

    Science.gov (United States)

    Landry, Jean-Sébastien; Price, David T.; Ramankutty, Navin; Parrott, Lael; Damon Matthews, H.

    2016-04-01

    Insects defoliate and kill plants in many ecosystems worldwide. The consequences of these natural processes on terrestrial ecology and nutrient cycling are well established, and their potential climatic effects resulting from modified land-atmosphere exchanges of carbon, energy, and water are increasingly being recognized. We developed a Marauding Insect Module (MIM) to quantify, in the Integrated BIosphere Simulator (IBIS), the consequences of insect activity on biogeochemical and biogeophysical fluxes, also accounting for the effects of altered vegetation dynamics. MIM can simulate damage from three different insect functional types: (1) defoliators on broadleaf deciduous trees, (2) defoliators on needleleaf evergreen trees, and (3) bark beetles on needleleaf evergreen trees, with the resulting impacts being estimated by IBIS based on the new, insect-modified state of the vegetation. MIM further accounts for the physical presence and gradual fall of insect-killed dead standing trees. The design of MIM should facilitate the addition of other insect types besides the ones already included and could guide the development of similar modules for other process-based vegetation models. After describing IBIS-MIM, we illustrate the usefulness of the model by presenting results spanning daily to centennial timescales for vegetation dynamics and cycling of carbon, energy, and water in a simplified setting and for bark beetles only. More precisely, we simulated 100 % mortality events from the mountain pine beetle for three locations in western Canada. We then show that these simulated impacts agree with many previous studies based on field measurements, satellite data, or modelling. MIM and similar tools should therefore be of great value in assessing the wide array of impacts resulting from insect-induced plant damage in the Earth system.

  10. Experimental Investigation of Comparative Process Capabilities of Metal and Ceramic Injection Molding for Precision Applications

    DEFF Research Database (Denmark)

    Islam, Aminul; Giannekas, Nikolaos; Marhöfer, David Maximilian

    2016-01-01

    and discussion presented in the paper will be useful for thorough understanding of the MIM and CIM processes and to select the right material and process for the right application or even to combine metal and ceramic materials by molding to produce metal–ceramic hybrid components.......The purpose of this paper is to make a comparative study on the process capabilities of the two branches of the powder injection molding (PIM) process—metal injection molding (MIM) and ceramic injection molding (CIM), for high-end precision applications. The state-of-the-art literature does...

  11. Optical properties and thermal stability of LaYbO3 ternary oxide for high-k dielectric application

    Science.gov (United States)

    Su, Wei-tao; Yang, Li; Li, Bin

    2011-01-01

    A new ternary rare oxide dielectric LaYbO3 film had been prepared on silicon wafers and quartz substrates by reactive sputtering method using a La-Yb metal target. A range of analysis techniques was performed to determine the optical band gap, thermal stability, and electrical property of the deposited samples. It was found the band gap of LaYbO3 film was about 5.8 eV. And the crystallization temperature for rapid thermal annealing (20 s) was between 900 and 950 °C. X-ray photoelectron spectroscopy results indicate the formation of the SiO2 and silicate in the interface between silicon wafer and LaYbO3 film. The dielectric constant is about 23 from the calculation of capacitance-voltage curve, which is comparable higher than previously reported La2O3 or Yb2O3 film.

  12. Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Sunwoo; Choi, Changhwan; Lee, Kilbock [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of); Cho, Joong Hwee [Department of Embedded Systems Engineering,University of Incheon, Incheon 406-722 (Korea, Republic of); Ko, Ki-Young [Korea Institute of Patent Information, Seoul, 146-8 (Korea, Republic of); Ahn, Jinho, E-mail: jhahn@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul, 133-791 (Korea, Republic of)

    2012-10-30

    We report the effect of consecutive electrical stress on the performance of organic field effect transistors (OFETs). Sputtered aluminum oxide (Al{sub 2}O{sub 3}) and hafnium oxide (HfO{sub 2}) were used as gate oxide layers. After the electrical stress, the threshold voltage, which strongly depends on bulk defects, was remarkably shifted to the negative direction, while the other performance characteristics of OFETs such as on-current, transconductance and mobility, which are sensitive to interface defects, were slightly decreased. This result implies that the defects in the bulk layer are significantly affected compared to the defects in the interface layer. Thus, it is important to control the defects in the pentacene bulk layer in order to maintain the good reliabilities of pentacene devices. Those defects in HfO{sub 2} gate oxide devices were larger compared to those in Al{sub 2}O{sub 3} gate oxide devices.

  13. Integration of atomic layer deposited high-k dielectrics on GaSb via hydrogen plasma exposure

    Directory of Open Access Journals (Sweden)

    Laura B. Ruppalt

    2014-12-01

    Full Text Available In this letter we report the efficacy of a hydrogen plasma pretreatment for integrating atomic layer deposited (ALD high-k dielectric stacks with device-quality p-type GaSb(001 epitaxial layers. Molecular beam eptiaxy-grown GaSb surfaces were subjected to a 30 minute H2/Ar plasma treatment and subsequently removed to air. High-k HfO2 and Al2O3/HfO2 bilayer insulating films were then deposited via ALD and samples were processed into standard metal-oxide-semiconductor (MOS capacitors. The quality of the semiconductor/dielectric interface was probed by current-voltage and variable-frequency admittance measurements. Measurement results indicate that the H2-plamsa pretreatment leads to a low density of interface states nearly independent of the deposited dielectric material, suggesting that pre-deposition H2-plasma exposure, coupled with ALD of high-k dielectrics, may provide an effective means for achieving high-quality GaSb MOS structures for advanced Sb-based digital and analog electronics.

  14. Comparison of aggregation behaviors between ionic liquid-type imidazolium gemini surfactant [C12-4-C12im]Br2 and its monomer [C12mim]Br on silicon wafer.

    Science.gov (United States)

    Ao, Mingqi; Xu, Guiying; Pang, Jinyu; Zhao, Taotao

    2009-09-01

    The aggregation of ionic liquid-type imidazolium gemini surfactant [C(12)-4-C(12)im]Br(2) on silicon wafer, which is compared with its monomer [C(12)mim]Br, have been studied. AFM morphology images and contact angle measurements suggest that the aggregations of [C(12)-4-C(12)im]Br(2) and [C(12)mim]Br on silicon wafer follow different mechanisms. Below the critical surface aggregation concentrations (CSAC), both surfactant molecules are adsorbed with their hydrophobic tails facing the air. But above the CSAC, [C(12)-4-C(12)im]Br(2) molecules finally form a bilayer structure with hydrophilic head groups facing the air, whereas [C(12)mim]Br molecules form a multilayer structure, and with increasing its concentration, the layer numbers increase with the hydrophobic chains and hydrophilic head groups facing the air by turns. Besides, the watery wettability of [C(12)-4-C(12)im]Br(2)-treated silica surface is lower than that of [C(12)mim]Br at the concentration of 5.0 cmc, and the infrared spectroscopy suggests that the poorer watery wettability of [C(12)-4-C(12)im]Br(2) may be relative to the less-ordered packing of methylene chains inside the aggregate. These different aggregation behaviors for the two surfactants ascribe to the different molecular structures and electrostatic interactions. This work would have certain theoretical guidance meaning on the modification of solid surface.

  15. Determination and modelling of osmotic coefficients and vapour pressures of binary systems 1- and 2-propanol with CnMimNTf2 ionic liquids (n = 2, 3, and 4) at T = 323.15 K

    International Nuclear Information System (INIS)

    Calvar, Noelia; Gomez, Elena; Dominguez, Angeles; Macedo, Eugenia A.

    2011-01-01

    Highlights: → Osmotic coefficients of 1- and 2-propanol with C n MimNTf 2 (n = 2, 3, and 4) are determined. → Experimental data were correlated with extended Pitzer model of Archer and MNRTL. → Mean molal activity coefficients and excess Gibbs free energies were calculated. → Effect of the anion is studied comparing these results with literature. - Abstract: The osmotic and activity coefficients and vapour pressures of binary mixtures containing 1-propanol, or 2-propanol and imidazolium-based ionic liquids with bis(trifluoromethylsulfonyl)imide as anion (1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, C 2 MimNTf 2 , 1-methyl-3-propylimidazolium bis(trifluoromethylsulfonyl)imide, C 3 MimNTf 2 , and 1-butyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide, C 4 MimNTf 2 ) were determined at T = 323.15 K using the vapour pressure osmometry technique. The experimental osmotic coefficients were correlated using the extended Pitzer model modified by Archer and the MNRTL model, obtaining standard deviations lower than 0.033 and 0.064, respectively. The mean molal activity coefficients and the excess Gibbs free energy for the mixtures studied were calculated from the parameters of the extended Pitzer model modified by Archer. Besides the effect of the alkyl-chain of the cation, the effect of the anion can be assessed comparing the experimental results with those previously obtained for imidazolium ionic liquids with sulphate anions.

  16. Threshold voltage control in TmSiO/HfO2 high-k/metal gate MOSFETs

    Science.gov (United States)

    Dentoni Litta, E.; Hellström, P.-E.; Östling, M.

    2015-06-01

    High-k interfacial layers have been proposed as a way to extend the scalability of Hf-based high-k/metal gate CMOS technology, which is currently limited by strong degradations in threshold voltage control, channel mobility and device reliability when the chemical oxide (SiOx) interfacial layer is scaled below 0.4 nm. We have previously demonstrated that thulium silicate (TmSiO) is a promising candidate as a high-k interfacial layer, providing competitive advantages in terms of EOT scalability and channel mobility. In this work, the effect of the TmSiO interfacial layer on threshold voltage control is evaluated, showing that the TmSiO/HfO2 dielectric stack is compatible with threshold voltage control techniques commonly used with SiOx/HfO2 stacks. Specifically, we show that the flatband voltage can be set in the range -1 V to +0.5 V by the choice of gate metal and that the effective workfunction of the stack is properly controlled by the metal workfunction in a gate-last process flow. Compatibility with a gate-first approach is also demonstrated, showing that integration of La2O3 and Al2O3 capping layers can induce a flatband voltage shift of at least 150 mV. Finally, the effect of the annealing conditions on flatband voltage is investigated, finding that the duration of the final forming gas anneal can be used as a further process knob to tune the threshold voltage. The evaluation performed on MOS capacitors is confirmed by the fabrication of TmSiO/HfO2/TiN MOSFETs achieving near-symmetric threshold voltages at sub-nm EOT.

  17. High resistance ratio of bipolar resistive switching in a multiferroic/high-K Bi(Fe0.95Cr0.05)O3/ZrO2/Pt heterostructure

    Science.gov (United States)

    Dong, B. W.; Miao, Jun; Han, J. Z.; Shao, F.; Yuan, J.; Meng, K. K.; Wu, Y.; Xu, X. G.; Jiang, Y.

    2018-03-01

    An novel heterostructure composed of multiferroic Bi(Fe0.95Cr0.05)O3 (BFCO) and high-K ZrO2 (ZO) layers is investigated. Ferroelectric and electrical properties of the BFZO/ZO heterostructure have been investigated. A pronounced bipolar ferroelectric resistive switching characteristic was achieved in the heterostructure at room temperature. Interestingly, the BFCO/ZO structures exhibit a reproducible resistive switching with a high On/Off resistance ratio ∼2×103 and long retention time. The relationship between polarization and band structure at the interface of BFCO/ZO bilayer under the positive and negative sweepings has been discussed. As a result, the BFCO/ZO multiferroic/high-K heterostructure with high On/Off resistance ratio and long retention characterizes, exhibits a potential in future nonvolatile memory application.

  18. Direct transitions from high-K isomers to low-K bands -- {gamma} softness or coriolis coupling

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Yoshifumi R.; Narimatsu, Kanako; Ohtsubo, Shin-Ichi [Kyushu Univ., Fukuoka (Japan)] [and others

    1996-12-31

    Recent measurements of direct transitions from high-K isomers to low-K bands reveal severe break-down of the K-selection rule and pose the problem of how to understand the mechanism of such K-violation. The authors recent systematic calculations by using a simple {gamma}-tunneling model reproduced many of the observed hindrances, indicating the importance of the {gamma} softness. However, there are some data which cannot be explained in terms of the {gamma}-degree of freedom. In this talk, the authors also discuss the results of conventional Coriolis coupling calculations, which is considered to be another important mechanism.

  19. Engineering the propagation of high-k bulk plasmonic waves in multilayer hyperbolic metamaterials by multiscale structuring

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Lavrinenko, Andrei; Sipe, J. E.

    2013-01-01

    , wavelength scale, the propagation of bulk plasmon polaritons in the resulting multiscale HMM is subject to photonic band gap phenomena. A great degree of control over such plasmons can be exerted by varying the superstructure geometry. As an example, Bragg reflection and Fabry-Pérot resonances...... are demonstrated in multiscale HMMs with periodic superstructures. More complicated, aperiodically ordered superstructures are also considered, with fractal Cantor-like multiscale HMMs exhibiting characteristic self-similar spectral signatures in the high-k band. The multiscale HMM concept is shown...

  20. SEMICONDUCTOR TECHNOLOGY: Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    Science.gov (United States)

    Yongliang, Li; Qiuxia, Xu

    2010-03-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 °C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case.

  1. Wet etching characteristics of a HfSiON high-k dielectric in HF-based solutions

    International Nuclear Information System (INIS)

    Li Yongliang; Xu Qiuxia

    2010-01-01

    The wet etching properties of a HfSiON high-k dielectric in HF-based solutions are investigated. HF-based solutions are the most promising wet chemistries for the removal of HfSiON, and etch selectivity of HF-based solutions can be improved by the addition of an acid and/or an alcohol to the HF solution. Due to densification during annealing, the etch rate of HfSiON annealed at 900 0 C for 30 s is significantly reduced compared with as-deposited HfSiON in HF-based solutions. After the HfSiON film has been completely removed by HF-based solutions, it is not possible to etch the interfacial layer and the etched surface does not have a hydrophobic nature, since N diffuses to the interface layer or Si substrate formation of Si-N bonds that dissolves very slowly in HF-based solutions. Existing Si-N bonds at the interface between the new high-k dielectric deposit and the Si substrate may degrade the carrier mobility due to Coulomb scattering. In addition, we show that N 2 plasma treatment before wet etching is not very effective in increasing the wet etch rate for a thin HfSiON film in our case. (semiconductor technology)

  2. High-K precession modes: Axially symmetric limit of wobbling motion in the cranked random-phase approximation description

    International Nuclear Information System (INIS)

    Shimizu, Yoshifumi R.; Matsuzaki, Masayuki; Matsuyanagi, Kenichi

    2005-01-01

    The rotational band built on the high-K multi-quasiparticle state can be interpreted as a multi-phonon band of the precession mode, which represents the precessional rotation about the axis perpendicular to the direction of the intrinsic angular momentum. By using the axially symmetric limit of the random-phase approximation (RPA) formalism developed for the nuclear wobbling motion, we study the properties of the precession modes in 178 W: the excitation energies, B(E2) and B(M1) values. We show that the excitations of such a specific type of rotation can be well described by the RPA formalism, which gives new insight into the wobbling motion in the triaxial superdeformed nuclei from a microscopic viewpoint

  3. Precession mode on high-K configurations: non-collective axially-symmetric limit of wobbling motion

    International Nuclear Information System (INIS)

    Shimizu, Yoshifumi R; Matsuzaki, Masayuki; Matsuyanagi, Kenichi

    2006-01-01

    The precession mode, the rotational excitation built on the high-K isomeric state, in comparison with the recently identified wobbling mode has been studied. The random-phase-approximation (RPA) formalism, which has been developed for the nuclear wobbling motion, is invoked and the precession phonon is obtained by the non-collective axially symmetric limit of the formalism. The excitation energies and the electromagnetic properties of the precession bands in 178 W are calculated, and it is found that the results of RPA calculations well correspond to those of the rotor model; the correspondence can be understood by an adiabatic approximation to the RPA phonon. As a by-product, it is also found that the problem of too small out-of-band B(E2) in our previous RPA wobbling calculations can be solved by a suitable choice of the triaxial deformation which corresponds to the one used in the rotor model

  4. Comparison of precursors for pulsed metal-organic chemical vapor deposition of HfO2 high-K dielectric thin films

    International Nuclear Information System (INIS)

    Teren, Andrew R.; Thomas, Reji; He, Jiaqing; Ehrhart, Peter

    2005-01-01

    Hafnium oxide films were deposited on Si(100) substrates using pulsed metal-organic chemical vapor deposition (CVD) and evaluated for high-K dielectric applications. Three types of precursors were tested: two oxygenated ones, Hf butoxide-dmae and Hf butoxide-mmp, and an oxygen-free one, Hf diethyl-amide. Depositions were carried out in the temperature range of 350-650 deg. C, yielding different microstructures ranging from amorphous to crystalline, monoclinic, films. The films were compared on the basis of growth rate, phase development, density, interface characteristics, and electrical properties. Some specific features of the pulsed injection technique are considered. For low deposition temperatures the growth rate for the amide precursor was significantly higher than for the mixed butoxide precursors. A thickness-dependent amorphous to crystalline phase transition temperature was found for all precursors. There is an increase of the film density along with the deposition temperature from values as low as 5 g/cm 3 at 350 deg. C to values close to the bulk value of 9.7 g/cm 3 at 550 deg. C. Crystallization is observed in the same temperature range for films of typically 10-20 nm thickness. However, annealing studies show that this density increase is not simply related to the crystallization of the films. Similar electrical properties could be observed for all precursors and the dielectric constant of the films reaches values similar to the best values reported for bulk crystalline HfO 2

  5. Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film

    Science.gov (United States)

    Zhang, Shumao; Kuo, Yue

    2018-03-01

    Electrical properties of nano-sized resistors made from the breakdown of the metal-oxide-semiconductor capacitor composed of the amorphous high-k gate dielectric have been investigated under different stress voltages and temperatures. The effective resistance of nano-resistors in the device was estimated from the I-V curve in the high voltage range. It decreased with the increase of the number of resistors. The resistance showed complicated temperature dependence, i.e. it neither behaves like a conductor nor a semiconductor. In the low voltage operation range, the charge transfer was controlled by the Schottky barrier at the nano-resistor/Si interface. The barrier height decreased with the increase of stress voltage, which was probably caused by the change of the nano-resistor composition. Separately, it was observed that the barrier height was dependent on the temperature, which was probably due to the dynamic nano-resistor formation process and the inhomogeneous barrier height distribution. The unique electrical characteristics of this new type of nano-resistors are important for many electronic and optoelectronic applications.

  6. GaN-Based High-k Praseodymium Oxide Gate MISFETs with P2S5/(NH42SX + UV Interface Treatment Technology

    Directory of Open Access Journals (Sweden)

    Chao-Wei Lin

    2012-01-01

    Full Text Available This study examines the praseodymium-oxide- (Pr2O3- passivated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs with high dielectric constant in which the AlGaN Schottky layers are treated with P2S5/(NH42SX + ultraviolet (UV illumination. An electron-beam evaporated Pr2O3 insulator is used instead of traditional plasma-assisted chemical vapor deposition (PECVD, in order to prevent plasma-induced damage to the AlGaN. In this work, the HEMTs are pretreated with P2S5/(NH42SX solution and UV illumination before the gate insulator (Pr2O3 is deposited. Since stable sulfur that is bound to the Ga species can be obtained easily and surface oxygen atoms are reduced by the P2S5/(NH42SX pretreatment, the lowest leakage current is observed in MIS-HEMT. Additionally, a low flicker noise and a low surface roughness (0.38 nm are also obtained using this novel process, which demonstrates its ability to reduce the surface states. Low gate leakage current Pr2O3 and high-k AlGaN/GaN MIS-HEMTs, with P2S5/(NH42SX + UV illumination treatment, are suited to low-noise applications, because of the electron-beam-evaporated insulator and the new chemical pretreatment.

  7. Direct evaluation of electrical dipole moment and oxygen density ratio at high-k dielectrics/SiO2 interface by X-ray photoelectron spectroscopy analysis

    Science.gov (United States)

    Fujimura, Nobuyuki; Ohta, Akio; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

    2018-04-01

    The electrical dipole moment at an ultrathin high-k (HfO2, Al2O3, TiO2, Y2O3, and SrO)/SiO2 interface and its correlation with the oxygen density ratio at the interface have been directly evaluated by X-ray photoelectron spectroscopy (XPS) under monochromatized Al Kα radiation. The electrical dipole moment at the high-k/SiO2 interface has been measured from the change in the cut-off energy of secondary photoelectrons. Moreover, the oxygen density ratio at the interface between high-k and SiO2 has been estimated from cation core-line signals, such as Hf 4f, Al 2p, Y 3d, Ti 2p, Sr 3d, and Si 2p. We have experimentally clarified the relationship between the measured electrical dipole moment and the oxygen density ratio at the high-k/SiO2 interface.

  8. Binding of Substrates to the Central Pore of the Vps4 ATPase Is Autoinhibited by the Microtubule Interacting and Trafficking (MIT) Domain and Activated by MIT Interacting Motifs (MIMs).

    Science.gov (United States)

    Han, Han; Monroe, Nicole; Votteler, Jörg; Shakya, Binita; Sundquist, Wesley I; Hill, Christopher P

    2015-05-22

    The endosomal sorting complexes required for transport (ESCRT) pathway drives reverse topology membrane fission events within multiple cellular pathways, including cytokinesis, multivesicular body biogenesis, repair of the plasma membrane, nuclear membrane vesicle formation, and HIV budding. The AAA ATPase Vps4 is recruited to membrane necks shortly before fission, where it catalyzes disassembly of the ESCRT-III lattice. The N-terminal Vps4 microtubule-interacting and trafficking (MIT) domains initially bind the C-terminal MIT-interacting motifs (MIMs) of ESCRT-III subunits, but it is unclear how the enzyme then remodels these substrates in response to ATP hydrolysis. Here, we report quantitative binding studies that demonstrate that residues from helix 5 of the Vps2p subunit of ESCRT-III bind to the central pore of an asymmetric Vps4p hexamer in a manner that is dependent upon the presence of flexible nucleotide analogs that can mimic multiple states in the ATP hydrolysis cycle. We also find that substrate engagement is autoinhibited by the Vps4p MIT domain and that this inhibition is relieved by binding of either Type 1 or Type 2 MIM elements, which bind the Vps4p MIT domain through different interfaces. These observations support the model that Vps4 substrates are initially recruited by an MIM-MIT interaction that activates the Vps4 central pore to engage substrates and generate force, thereby triggering ESCRT-III disassembly. © 2015 by The American Society for Biochemistry and Molecular Biology, Inc.

  9. Binding of Substrates to the Central Pore of the Vps4 ATPase Is Autoinhibited by the Microtubule Interacting and Trafficking (MIT) Domain and Activated by MIT Interacting Motifs (MIMs)*

    Science.gov (United States)

    Han, Han; Monroe, Nicole; Votteler, Jörg; Shakya, Binita; Sundquist, Wesley I.; Hill, Christopher P.

    2015-01-01

    The endosomal sorting complexes required for transport (ESCRT) pathway drives reverse topology membrane fission events within multiple cellular pathways, including cytokinesis, multivesicular body biogenesis, repair of the plasma membrane, nuclear membrane vesicle formation, and HIV budding. The AAA ATPase Vps4 is recruited to membrane necks shortly before fission, where it catalyzes disassembly of the ESCRT-III lattice. The N-terminal Vps4 microtubule-interacting and trafficking (MIT) domains initially bind the C-terminal MIT-interacting motifs (MIMs) of ESCRT-III subunits, but it is unclear how the enzyme then remodels these substrates in response to ATP hydrolysis. Here, we report quantitative binding studies that demonstrate that residues from helix 5 of the Vps2p subunit of ESCRT-III bind to the central pore of an asymmetric Vps4p hexamer in a manner that is dependent upon the presence of flexible nucleotide analogs that can mimic multiple states in the ATP hydrolysis cycle. We also find that substrate engagement is autoinhibited by the Vps4p MIT domain and that this inhibition is relieved by binding of either Type 1 or Type 2 MIM elements, which bind the Vps4p MIT domain through different interfaces. These observations support the model that Vps4 substrates are initially recruited by an MIM-MIT interaction that activates the Vps4 central pore to engage substrates and generate force, thereby triggering ESCRT-III disassembly. PMID:25833946

  10. Polaron-electron assisted giant dielectric dispersion in SrZrO{sub 3} high-k dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Borkar, Hitesh; Barvat, Arun; Pal, Prabir; Kumar, Ashok, E-mail: ashok553@nplindia.org [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Shukla, A. K. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Pulikkotil, J. J. [CSIR-National Physical Laboratory, Dr. K. S. Krishnan Marg, New Delhi 110012 (India); Academy of Scientific and Innovative Research (AcSIR), CSIR-National Physical Laboratory (CSIR-NPL) Campus, Dr. K S Krishnan Marg, New Delhi 110012 (India); Computation and Networking Facility, CSIR-National Physical Laboratory, New Delhi 110012 (India)

    2016-06-07

    The SrZrO{sub 3} is a well known high-k dielectric constant (∼22) and high optical bandgap (∼5.8 eV) material and one of the potential candidates for future generation nanoelectronic logic elements (8 nm node technology) beyond silicon. Its dielectric behavior is fairly robust and frequency independent till 470 K; however, it suffers a strong small-polaron based electronic phase transition (T{sub e}) linking 650 to 750 K. The impedance spectroscopy measurements revealed the presence of conducting grains and grain boundaries at elevated temperature which provide energetic mobile charge carriers with activation energy in the range of 0.7 to 1.2 eV supporting the oxygen ions and proton conduction. X-ray photoemission spectroscopy measurements suggest the presence of weak non-stoichiometric O{sup 2−} anions and hydroxyl species bound to different sites at the surface and bulk. These thermally activated charge carriers at elevated temperature significantly contribute to the polaronic based dielectric anomaly and conductivity. Our dielectric anomaly supports pseudo phase transition due to high degree of change in ZrO{sub 6} octahedral angle in the temperature range of 650–750 K, where electron density and phonon vibration affect the dielectric and conductivity properties.

  11. Comprehensive study and design of scaled metal/high-k/Ge gate stacks with ultrathin aluminum oxide interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Asahara, Ryohei; Hideshima, Iori; Oka, Hiroshi; Minoura, Yuya; Hosoi, Takuji, E-mail: hosoi@mls.eng.osaka-u.ac.jp; Shimura, Takayoshi; Watanabe, Heiji [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Ogawa, Shingo [Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871 (Japan); Toray Research Center Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567 (Japan); Yoshigoe, Akitaka; Teraoka, Yuden [Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5148 (Japan)

    2015-06-08

    Advanced metal/high-k/Ge gate stacks with a sub-nm equivalent oxide thickness (EOT) and improved interface properties were demonstrated by controlling interface reactions using ultrathin aluminum oxide (AlO{sub x}) interlayers. A step-by-step in situ procedure by deposition of AlO{sub x} and hafnium oxide (HfO{sub x}) layers on Ge and subsequent plasma oxidation was conducted to fabricate Pt/HfO{sub 2}/AlO{sub x}/GeO{sub x}/Ge stacked structures. Comprehensive study by means of physical and electrical characterizations revealed distinct impacts of AlO{sub x} interlayers, plasma oxidation, and metal electrodes serving as capping layers on EOT scaling, improved interface quality, and thermal stability of the stacks. Aggressive EOT scaling down to 0.56 nm and very low interface state density of 2.4 × 10{sup 11 }cm{sup −2}eV{sup −1} with a sub-nm EOT and sufficient thermal stability were achieved by systematic process optimization.

  12. Capacitance-voltage analysis of electrical properties for WSe2 field effect transistors with high-k encapsulation layer

    Science.gov (United States)

    Ko, Seung-Pil; Shin, Jong Mok; Jang, Ho Kyun; You, Min Youl; Jin, Jun-Eon; Choi, Miri; Cho, Jiung; Kim, Gyu-Tae

    2018-02-01

    Doping effects in devices based on two-dimensional (2D) materials have been widely studied. However, detailed analysis and the mechanism of the doping effect caused by encapsulation layers has not been sufficiently explored. In this work, we present experimental studies on the n-doping effect in WSe2 field effect transistors (FETs) with a high-k encapsulation layer (Al2O3) grown by atomic layer deposition. In addition, we demonstrate the mechanism and origin of the doping effect. After encapsulation of the Al2O3 layer, the threshold voltage of the WSe2 FET negatively shifted with the increase of the on-current. The capacitance-voltage measurements of the metal insulator semiconductor (MIS) structure proved the presence of the positive fixed charges within the Al2O3 layer. The flat-band voltage of the MIS structure of Au/Al2O3/SiO2/Si was shifted toward the negative direction on account of the positive fixed charges in the Al2O3 layer. Our results clearly revealed that the fixed charges in the Al2O3 encapsulation layer modulated the Fermi energy level via the field effect. Moreover, these results possibly provide fundamental ideas and guidelines to design 2D materials FETs with high-performance and reliability.

  13. Conduction band-edge d-states in high-k dielectrics due to Jahn-Teller term splittings

    International Nuclear Information System (INIS)

    Lucovsky, G.; Fulton, C.C.; Zhang, Y.; Luning, J.; Edge, L.; Whitten, J.L.; Nemanich, R.J.; Schlom, D.G.; Afanase'v, V.V.

    2005-01-01

    X-ray absorption spectroscopy (XAS) is used to study conduction band edge electronic structure of high-k transition metal (TM) and trivalent lanthanide series rare earth (RE) oxide dielectrics. Empty TM/RE d-states are studied by intra-atomic transitions originating in core level spin-orbit split p-states, and conduction band states are studied in inter-atomic transitions which originate in the oxygen atom 1s core level state. In non-crystalline Zr and Hf silicate alloys, the local bonding symmetry, or crystal field splits these d-states into doubly and triply degenerate features. In nano-crystalline oxides, there are additional d-state splittings due to contributions of more distant neighbors that completely remove d-state degeneracies via the Jahn-Teller effect mechanism. This gives rise to highly localized band edge states that are electronically active in photoconductivity, internal photoemission, and act as bulk traps in metal oxide semiconductor (MOS) devices

  14. Impact and Origin of Interface States in MOS Capacitor with Monolayer MoS2 and HfO2 High-k Dielectric.

    Science.gov (United States)

    Xia, Pengkun; Feng, Xuewei; Ng, Rui Jie; Wang, Shijie; Chi, Dongzhi; Li, Cequn; He, Zhubing; Liu, Xinke; Ang, Kah-Wee

    2017-01-13

    Two-dimensional layered semiconductors such as molybdenum disulfide (MoS 2 ) at the quantum limit are promising material for nanoelectronics and optoelectronics applications. Understanding the interface properties between the atomically thin MoS 2 channel and gate dielectric is fundamentally important for enhancing the carrier transport properties. Here, we investigate the frequency dispersion mechanism in a metal-oxide-semiconductor capacitor (MOSCAP) with a monolayer MoS 2 and an ultra-thin HfO 2 high-k gate dielectric. We show that the existence of sulfur vacancies at the MoS 2 -HfO 2 interface is responsible for the generation of interface states with a density (D it ) reaching ~7.03 × 10 11  cm -2  eV -1 . This is evidenced by a deficit S:Mo ratio of ~1.96 using X-ray photoelectron spectroscopy (XPS) analysis, which deviates from its ideal stoichiometric value. First-principles calculations within the density-functional theory framework further confirms the presence of trap states due to sulfur deficiency, which exist within the MoS 2 bandgap. This corroborates to a voltage-dependent frequency dispersion of ~11.5% at weak accumulation which decreases monotonically to ~9.0% at strong accumulation as the Fermi level moves away from the mid-gap trap states. Further reduction in D it could be achieved by thermally diffusing S atoms to the MoS 2 -HfO 2 interface to annihilate the vacancies. This work provides an insight into the interface properties for enabling the development of MoS 2 devices with carrier transport enhancement.

  15. Plasma-Induced Damage on the Reliability of Hf-Based High-k/Dual Metal-Gates Complementary Metal Oxide Semiconductor Technology

    International Nuclear Information System (INIS)

    Weng, W.T.; Lin, H.C.; Huang, T.Y.; Lee, Y.J.; Lin, H.C.

    2009-01-01

    This study examines the effects of plasma-induced damage (PID) on Hf-based high-k/dual metal-gates transistors processed with advanced complementary metal-oxide-semiconductor (CMOS) technology. In addition to the gate dielectric degradations, this study demonstrates that thinning the gate dielectric reduces the impact of damage on transistor reliability including the positive bias temperature instability (PBTI) of n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) and the negative bias temperature instability (NBTI) of p-channel MOSFETs. This study shows that high-k/metal-gate transistors are more robust against PID than conventional SiO 2 /poly-gate transistors with similar physical thickness. Finally this study proposes a model that successfully explains the observed experimental trends in the presence of PID for high-k/metal-gate CMOS technology.

  16. Lo fantástico más allá de la vacilación: la representación mimética del miedo en dos cuentos de Bioy Casares y Cortázar

    OpenAIRE

    Kurz, Andreas

    2014-01-01

    El artículo revisa algunos conceptos y definiciones de lo fantástico literario y pretende diferenciarlo de lo postulado por el realismo mágico y lo real maravilloso. Se proponen como textos clave al respecto: el libro de Franz Roh que da nombre al realismo mágico, la historia de la literatura fantástica, por H. P. Lovecraft; así como la tesis de ‘das Unheimliche’, de S. Freud. A manera de hipótesis, establecemos el carácter mimético de la literatura fantástica que representa el miedo...

  17. Diseño análisis reológico y procesado de mezclas inyectables para la fabricación mediante tecnología MIM de diferentes componentes metálicos

    OpenAIRE

    Romero Gutiérrez, Ana

    2017-01-01

    El moldeo por inyección de metales (MIM) es una técnica de procesado que en las últimas décadas se ha consolidado como una alternativa eficaz y competitiva para la fabricación de grandes lotes de piezas de geometría compleja y reducido tamaño. Para expandir la técnica hacia nuevos sectores industriales hace falta una investigación exhaustiva de la mejora del propio proceso productivo y de su posible aplicabilidad en materiales que aún no han sido utilizados. En este sentido y con el fm de mej...

  18. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  19. Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide

    International Nuclear Information System (INIS)

    Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Testsu

    2012-01-01

    The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al 2 O 3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al 2 O 3 ) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10 -10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al 2 O 3 ) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.

  20. From surface to volume plasmons in hyperbolic metamaterials: General existence conditions for bulk high-k waves in metal-dielectric and graphene-dielectric multilayers

    DEFF Research Database (Denmark)

    Zhukovsky, Sergei; Andryieuski, Andrei; Sipe, John E.

    2014-01-01

    -dielectric and recently introduced graphene-dielectric stacks. We confirm that short-range surface plasmons in thin metal layers can give rise to hyperbolic metamaterial properties and demonstrate that long-range surface plasmons cannot. We also show that graphene-dielectric multilayers tend to support high- k waves...

  1. CMOS integration of high-k/metal gate transistors in diffusion and gate replacement (D&GR) scheme for dynamic random access memory peripheral circuits

    Science.gov (United States)

    Dentoni Litta, Eugenio; Ritzenthaler, Romain; Schram, Tom; Spessot, Alessio; O’Sullivan, Barry; Machkaoutsan, Vladimir; Fazan, Pierre; Ji, Yunhyuck; Mannaert, Geert; Lorant, Christophe; Sebaai, Farid; Thiam, Arame; Ercken, Monique; Demuynck, Steven; Horiguchi, Naoto

    2018-04-01

    Integration of high-k/metal gate stacks in peripheral transistors is a major candidate to ensure continued scaling of dynamic random access memory (DRAM) technology. In this paper, the CMOS integration of diffusion and gate replacement (D&GR) high-k/metal gate stacks is investigated, evaluating four different approaches for the critical patterning step of removing the N-type field effect transistor (NFET) effective work function (eWF) shifter stack from the P-type field effect transistor (PFET) area. The effect of plasma exposure during the patterning step is investigated in detail and found to have a strong impact on threshold voltage tunability. A CMOS integration scheme based on an experimental wet-compatible photoresist is developed and the fulfillment of the main device metrics [equivalent oxide thickness (EOT), eWF, gate leakage current density, on/off currents, short channel control] is demonstrated.

  2. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    Science.gov (United States)

    Chaowen, Liu; Jingping, Xu; Lu, Liu; Hanhan, Lu; Yuan, Huang

    2016-02-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. Project supported by the National Natural Science Foundation of China (No. 61176100).

  3. A threshold-voltage model for small-scaled GaAs nMOSFET with stacked high-k gate dielectric

    International Nuclear Information System (INIS)

    Liu Chaowen; Xu Jingping; Liu Lu; Lu Hanhan; Huang Yuan

    2016-01-01

    A threshold-voltage model for a stacked high-k gate dielectric GaAs MOSFET is established by solving a two-dimensional Poisson's equation in channel and considering the short-channel, DIBL and quantum effects. The simulated results are in good agreement with the Silvaco TCAD data, confirming the correctness and validity of the model. Using the model, impacts of structural and physical parameters of the stack high-k gate dielectric on the threshold-voltage shift and the temperature characteristics of the threshold voltage are investigated. The results show that the stacked gate dielectric structure can effectively suppress the fringing-field and DIBL effects and improve the threshold and temperature characteristics, and on the other hand, the influence of temperature on the threshold voltage is overestimated if the quantum effect is ignored. (paper)

  4. Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Djara, V.; Cherkaoui, K.; Negara, M. A.; Hurley, P. K., E-mail: paul.hurley@tyndall.ie [Tyndall National Institute, University College Cork, Dyke Parade, Cork (Ireland)

    2015-11-28

    An alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N{sub inv}) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I{sub d}-V{sub g} measurements enabled an accurate effective mobility vs N{sub inv} extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs.

  5. Features of carrier tunneling between the silicon valence band and metal in devices based on the Al/high-K oxide/SiO_2/Si structure

    International Nuclear Information System (INIS)

    Vexler, M. I.; Grekhov, I. V.

    2016-01-01

    The features of electron tunneling from or into the silicon valence band in a metal–insulator–semiconductor system with the HfO_2(ZrO_2)/SiO_2 double-layer insulator are theoretically analyzed for different modes. It is demonstrated that the valence-band current plays a less important role in structures with HfO_2(ZrO_2)/SiO_2 than in structures containing only silicon dioxide. In the case of a very wide-gap high-K oxide ZrO_2, nonmonotonic behavior related to tunneling through the upper barrier is predicted for the valence-band–metal current component. The use of an insulator stack can offer certain advantages for some devices, including diodes, bipolar tunnel-emitter transistors, and resonant-tunneling diodes, along with the traditional use of high-K insulators in a field-effect transistor.

  6. Performance improvement of charge trap flash memory by using a composition-modulated high-k trapping layer

    International Nuclear Information System (INIS)

    Tang Zhen-Jie; Li Rong; Yin Jiang

    2013-01-01

    A composition-modulated (HfO 2 ) x (Al 2 O3) 1−x charge trapping layer is proposed for charge trap flash memory by controlling the Al atom content to form a peak and valley shaped band gap. It is found that the memory device using the composition-modulated (HfO 2 ) x (Al 2 O 3 ) 1−x as the charge trapping layer exhibits a larger memory window of 11.5 V, improves data retention even at high temperature, and enhances the program/erase speed. Improvements of the memory characteristics are attributed to the special band-gap structure resulting from the composition-modulated trapping layer. Therefore, the composition-modulated charge trapping layer may be useful in future nonvolatile flash memory device application. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  7. O "esporte das multidões" no Brasil : entre o contexto de ação futebolístico e a negociação mimética dos conflitos sociais

    OpenAIRE

    Souza, Juliano de

    2014-01-01

    Orientador : Prof. Dr. Wanderley Marchi Júnior Tese (doutorado) - Universidade Federal do Paraná, Setor de Ciências Biológicas, Programa de Pós-Graduação em Educação Física. Defesa: Curitiba, 09/12/2014 Inclui referências Área de concentração: Exercício e esporte Resumo: A presente tese sintetizada no título "O „esporte das multidões. no Brasil: entre o contexto de ação futebolístico e a negociação mimética dos conflitos sociais" configura uma pesquisa de caráter fundamentalmente,...

  8. Fast-switching optically isotropic liquid crystal nano-droplets with improved depolarization and Kerr effect by doping high k nanoparticles.

    Science.gov (United States)

    Kim, Byeonggon; Kim, Hyun Gyu; Shim, Gyu-Yeop; Park, Ji-Sub; Joo, Kyung-Il; Lee, Dong-Jin; Lee, Joun-Ho; Baek, Ji-Ho; Kim, Byeong Koo; Choi, Yoonseuk; Kim, Hak-Rin

    2018-01-10

    We proposed and analyzed an optically isotropic nano-droplet liquid crystal (LC) doped with high k nanoparticles (NPs), exhibiting enhanced Kerr effects, which could be operated with reduced driving voltages. For enhancing the contrast ratio together with the light efficiencies, the LC droplet sizes were adjusted to be shorter than the wavelength of visible light to reduce depolarization effects by optical scattering of the LC droplets. Based on the optical analysis of the depolarization effects, the influence of the relationship between the LC droplet size and the NP doping ratio on the Kerr effect change was investigated.

  9. 2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

    Science.gov (United States)

    Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

    2018-02-01

    This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

  10. Controlling Chain Conformations of High-k Fluoropolymer Dielectrics to Enhance Charge Mobilities in Rubrene Single-Crystal Field-Effect Transistors.

    Science.gov (United States)

    Adhikari, Jwala M; Gadinski, Matthew R; Li, Qi; Sun, Kaige G; Reyes-Martinez, Marcos A; Iagodkine, Elissei; Briseno, Alejandro L; Jackson, Thomas N; Wang, Qing; Gomez, Enrique D

    2016-12-01

    A novel photopatternable high-k fluoropolymer, poly(vinylidene fluoride-bromotrifluoroethylene) P(VDF-BTFE), with a dielectric constant (k) between 8 and 11 is demonstrated in thin-film transistors. Crosslinking P(VDF-BTFE) reduces energetic disorder at the dielectric-semiconductor interface by controlling the chain conformations of P(VDF-BTFE), thereby leading to approximately a threefold enhancement in the charge mobility of rubrene single-crystal field-effect transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Improved integration of ultra-thin high-k dielectrics in few-layer MoS2 FET by remote forming gas plasma pretreatment

    Science.gov (United States)

    Wang, Xiao; Zhang, Tian-Bao; Yang, Wen; Zhu, Hao; Chen, Lin; Sun, Qing-Qing; Zhang, David Wei

    2017-01-01

    The effective and high-quality integration of high-k dielectrics on two-dimensional (2D) crystals is essential to the device structure engineering and performance improvement of field-effect transistor (FET) based on the 2D semiconductors. We report a 2D MoS2 transistor with ultra-thin Al2O3 top-gate dielectric (6.1 nm) and extremely low leakage current. Remote forming gas plasma pretreatment was carried out prior to the atomic layer deposition, providing nucleation sites with the physically adsorbed ions on the MoS2 surface. The top gate MoS2 FET exhibited excellent electrical performance, including high on/off current ratio over 109, subthreshold swing of 85 mV/decade and field-effect mobility of 45.03 cm2/V s. Top gate leakage current less than 0.08 pA/μm2 at 4 MV/cm has been obtained, which is the smallest compared with the reported top-gated MoS2 transistors. Such an optimized integration of high-k dielectric in 2D semiconductor FET with enhanced performance is very attractive, and it paves the way towards the realization of more advanced 2D nanoelectronic devices and integrated circuits.

  12. Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams

    Science.gov (United States)

    Uedono, A.; Inumiya, S.; Matsuki, T.; Aoyama, T.; Nara, Y.; Ishibashi, S.; Ohdaira, T.; Suzuki, R.; Miyazaki, S.; Yamada, K.

    2007-09-01

    Vacancy-fluorine complexes in metal-oxide semiconductors (MOS) with high-k gate dielectrics were studied using a positron annihilation technique. F+ ions were implanted into Si substrates before the deposition of gate dielectrics (HfSiON). The shift of threshold voltage (Vth) in MOS capacitors and an increase in Fermi level position below the HfSiON/Si interface were observed after F+ implantation. Doppler broadening spectra of the annihilation radiation and positron lifetimes were measured before and after HfSiON fabrication processes. From a comparison between Doppler broadening spectra and those obtained by first-principles calculation, the major defect species in Si substrates after annealing treatment (1050 °C, 5 s) was identified as vacancy-fluorine complexes (V3F2). The origin of the Vth shift in the MOS capacitors was attributed to V3F2 located in channel regions.

  13. Combining a multi deposition multi annealing technique with a scavenging (Ti) to improve the high-k/metal gate stack performance for a gate-last process

    International Nuclear Information System (INIS)

    Zhang ShuXiang; Yang Hong; Tang Bo; Tang Zhaoyun; Xu Yefeng; Xu Jing; Yan Jiang

    2014-01-01

    ALD HfO 2 films fabricated by a novel multi deposition multi annealing (MDMA) technique are investigated, we have included samples both with and without a Ti scavenging layer. As compared to the reference gate stack treated by conventional one-time deposition and annealing (D and A), devices receiving MDMA show a significant reduction in leakage current. Meanwhile, EOT growth is effectively controlled by the Ti scavenging layer. This improvement strongly correlates with the cycle number of D and A (while keeping the total annealing time and total dielectrics thickness the same). Transmission electron microscope and energy-dispersive X-ray spectroscopy analysis suggests that oxygen incorporation into both the high-k film and the interfacial layer is likely to be responsible for the improvement of the device. This novel MDMA is promising for the development of gate stack technology in a gate last integration scheme. (semiconductor technology)

  14. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-02-12

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry\\'s most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  15. First-principles simulations of the leakage current in metal-oxide-semiconductor structures caused by oxygen vacancies in HfO2 high-K gate dielectric

    International Nuclear Information System (INIS)

    Mao, L.F.; Wang, Z.O.

    2008-01-01

    HfO 2 high-K gate dielectric has been used as a new gate dielectric in metal-oxide-semiconductor structures. First-principles simulations are used to study the effects of oxygen vacancies on the tunneling current through the oxide. A level which is nearly 1.25 eV from the bottom of the conduction band is introduced into the bandgap due to the oxygen vacancies. The tunneling current calculations show that the tunneling currents through the gate oxide with different defect density possess the typical characteristic of stress-induced leakage current. Further analysis shows that the location of oxygen vacancies will have a marked effect on the tunneling current. The largest increase in the tunneling current caused by oxygen vacancies comes about at the middle oxide field when defects are located at the middle of the oxide. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Structural and electrical characteristics of high-k/metal gate metal oxide semiconductor capacitors fabricated on flexible, semi-transparent silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa; Sevilla, Galo T.

    2013-01-01

    In pursuit of flexible computers with high performance devices, we demonstrate a generic process to fabricate 10 000 metal-oxide-semiconductor capacitors (MOSCAPs) with semiconductor industry's most advanced high-k/metal gate stacks on widely used, inexpensive bulk silicon (100) wafers and then using a combination of iso-/anisotropic etching to release the top portion of the silicon with the already fabricated devices as a mechanically flexible (bending curvature of 133 m−1), optically semi-transparent silicon fabric (1.5 cm × 3 cm × 25 μm). The electrical characteristics show 3.7 nm effective oxide thickness, −0.2 V flat band voltage, and no hysteresis from the fabricated MOSCAPs.

  17. Effects of the TiO2 high-k insulator material on the electrical characteristics of GaAs based Schottky barrier diodes

    Science.gov (United States)

    Zellag, S.; Dehimi, L.; Asar, T.; Saadoune, A.; Fritah, A.; Özçelik, S.

    2018-01-01

    The effects of the TiO2 high-k insulator material on Au/n-GaAs/Ti/Au Schottky barrier diodes have been studied by means of the numerical simulation and experimental results at room temperature. The Atlas-Silvaco-TCAD numerical simulator has been used to explain the behavior of different physical phenomena of Schottky diode. The experimental values of ideality factor, barrier height, and series resistance have been determined by using the various techniques such as Cheung's method, forward bias ln I- V and reverse capacitance-voltage behaviors. The experimental ideality factor and barrier height values have been found to be 4.14 and 0.585 eV for Au/n-GaAs/Ti/Au Schottky barrier diode and 4.00 and 0.548 eV for that structure with 16 nm thick TiO2 film and 3.92, 0.556 eV with 100 nm thick TiO2 film. The diodes show a non-ideal current-voltage behavior that of the ideality factor so far from unity. The extraction of N ss interface distribution profile as a function of E c -E ss is made using forward-bias I- V measurement by considering the bias dependence of ideality factor, the effective barrier height, and series resistance for Schottky barrier diodes. The N ss calculated values with consideration of the series resistance are lower than the calculated ones without series resistance. The current-voltage results of diodes reveal an abnormal increase in leakage current with an increase in thickness of high-k interfacial insulator layer. However, the simulation agrees in general with the experimental results.

  18. Evaluation of the effects of thermal annealing temperature and high-k dielectrics on amorphous InGaZnO thin films by using pseudo-MOS transistors

    International Nuclear Information System (INIS)

    Lee, Se-Won; Cho, Won-Ju

    2012-01-01

    The effects of annealing temperatures and high-k gate dielectric materials on the amorphous In-Ga-Zn-O thin-film transistors (a-IGZO TFTs) were investigated using pseudo-metal-oxide semiconductor transistors (Ψ-MOSFETs), a method without conventional source/drain (S/D) layer deposition. Annealing of the a-IGZO film was carried out at 150 - 900 .deg. C in a N 2 ambient for 30 min. As the annealing temperature was increased, the electrical characteristics of Ψ-MOSFETs on a-IGZO were drastically improved. However, when the annealing temperature exceeded 700 .deg. C, a deterioration of the MOS parameters was observed, including a shift of the threshold voltage (V th ) in a negative direction, an increase in the subthreshold slope (SS) and hysteresis, a decrease in the field effect mobility (μ FE ), an increase in the trap density (N t ), and a decrease in the on/off ratio. Meanwhile, the high-k gate dielectrics enhanced the performance of a-IGZO Ψ-MOSFETs. The ZrO 2 gate dielectrics particularly exhibited excellent characteristics in terms of SS (128 mV/dec), μ FE (10.2 cm -2 /V·s), N t (1.1 x 10 12 cm -2 ), and on/off ratio (5.3 x 10 6 ). Accordingly, the Ψ-MOSFET structure is a useful method for rapid evaluation of the effects of the process and the material on a-IGZO TFTs without a conventional S/D layer deposition.

  19. Electron-electron scattering-induced channel hot electron injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors with high-k/metal gate stacks

    International Nuclear Information System (INIS)

    Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Liu, Xi-Wen; Chang, Ting-Chang; Chen, Ching-En; Ho, Szu-Han; Tseng, Tseung-Yuen; Cheng, Osbert; Huang, Cheng-Tung; Lu, Ching-Sen

    2014-01-01

    This work investigates electron-electron scattering (EES)-induced channel hot electron (CHE) injection in nanoscale n-channel metal-oxide-semiconductor field-effect-transistors (n-MOSFETs) with high-k/metal gate stacks. Many groups have proposed new models (i.e., single-particle and multiple-particle process) to well explain the hot carrier degradation in nanoscale devices and all mechanisms focused on Si-H bond dissociation at the Si/SiO 2 interface. However, for high-k dielectric devices, experiment results show that the channel hot carrier trapping in the pre-existing high-k bulk defects is the main degradation mechanism. Therefore, we propose a model of EES-induced CHE injection to illustrate the trapping-dominant mechanism in nanoscale n-MOSFETs with high-k/metal gate stacks.

  20. Homozygous missense mutation (G56R in glycosylphosphatidylinositol-anchored high-density lipoprotein-binding protein 1 (GPI-HBP1 in two siblings with fasting chylomicronemia (MIM 144650

    Directory of Open Access Journals (Sweden)

    Hegele Robert A

    2007-09-01

    Full Text Available Abstract Background Mice with a deleted Gpihbp1 gene encoding glycosylphosphatidylinositol-anchored high-density lipoprotein-binding protein 1 (GPI-HBP1 develop severe chylomicronemia. We screened the coding regions of the human homologue – GPIHBP1 – from the genomic DNA of 160 unrelated adults with fasting chylomicronemia and plasma triglycerides >10 mmol/L, each of whom had normal sequence of the LPL and APOC2 genes. Results One patient with severe type 5 hyperlipoproteinemia (MIM 144650, fasting chylomicronemia and relapsing pancreatitis resistant to standard therapy was found to be homozygous for a novel GPIHBP1 missense variant, namely G56R. This mutation was absent from the genomes of 600 control subjects and 610 patients with hyperlipidemia. The GPIHBP1 G56 residue has been conserved throughout evolution and the G56R mutation was predicted to have compromised function. Her homozygous brother also had refractory chylomicronemia and relapsing pancreatitis together with early coronary heart disease. G56R heterozygotes in the family had fasting mild hypertriglyceridemia. Conclusion Thus, a very rare GPIHBP1 missense mutation appears to be associated with severe hypertriglyceridemia and chylomicronemia.

  1. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Kanashima, T., E-mail: kanashima@ee.es.osaka-u.ac.jp; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K. [Graduate School of Engineering Science, Osaka University, Machkaneyama 1-3, Toyonaka, Osaka 560-8531 (Japan); Nohira, H. [Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557 (Japan)

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  2. Influence of multi-deposition multi-annealing on time-dependent dielectric breakdown characteristics of PMOS with high-k/metal gate last process

    International Nuclear Information System (INIS)

    Wang Yan-Rong; Yang Hong; Xu Hao; Wang Xiao-Lei; Luo Wei-Chun; Qi Lu-Wei; Zhang Shu-Xiang; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    A multi-deposition multi-annealing technique (MDMA) is introduced into the process of high-k/metal gate MOSFET for the gate last process to effectively reduce the gate leakage and improve the device’s performance. In this paper, we systematically investigate the electrical parameters and the time-dependent dielectric breakdown (TDDB) characteristics of positive channel metal oxide semiconductor (PMOS) under different MDMA process conditions, including the deposition/annealing (D and A) cycles, the D and A time, and the total annealing time. The results show that the increases of the number of D and A cycles (from 1 to 2) and D and A time (from 15 s to 30 s) can contribute to the results that the gate leakage current decreases by about one order of magnitude and that the time to fail (TTF) at 63.2% increases by about several times. However, too many D and A cycles (such as 4 cycles) make the equivalent oxide thickness (EOT) increase by about 1 Å and the TTF of PMOS worsen. Moreover, different D and A times and numbers of D and A cycles induce different breakdown mechanisms. (paper)

  3. Particle-number conserving analysis for the 2-quasiparticle and high-K multi-quasiparticle states in doubly-odd 174,176Lu

    International Nuclear Information System (INIS)

    Li Bingheng; Lei Yi'an; Zhang Zhenhua

    2013-01-01

    Two-quasiparticle bands and low-lying excited high-K four-, six-, and eight-quasiparticle bands in the doubly-odd 174,176 Lu are analyzed by using the cranked shell model (CSM) with the pairing correlations treated by a particle-number conserving (PNC) method, in which the blocking effects are taken into account exactly. The proton and neutron Nilsson level schemes for 174,176 Lu are taken from the adjacent odd-A Lu and Hf isotopes, which are adopted to reproduce the experimental bandhead energies of the one-quasiproton and one-quasineutron bands of these odd-A Lu and Hf nuclei, respectively. Once the quasiparticle configurations are determined, the experimental bandhead energies and the moments of inertia of these two- and multi-quasiparticle bands are well reproduced by PNC-CSM calculations. The Coriolis mixing of the low-K (K=|Ω 1 -Ω 2 |) two-quasiparticle band of the Gallagher-Moszkowski doublet with one nucleon in the Ω=1/2 orbital is analyzed. (authors)

  4. The evolution of Neoproterozoic magmatism in Southernmost Brazil: shoshonitic, high-K tholeiitic and silica-saturated, sodic alkaline volcanism in post-collisional basins

    Directory of Open Access Journals (Sweden)

    Sommer Carlos A.

    2006-01-01

    Full Text Available The Neoproterozoic shoshonitic and mildly alkaline bimodal volcanism of Southernmost Brazil is represented by rock assemblages associated to sedimentary successions, deposited in strike-slip basins formed at the post-collisional stages of the Brasilian/Pan-African orogenic cycle. The best-preserved volcano sedimentary associations occur in the Camaquã and Campo Alegre Basins, respectively in the Sul-riograndense and Catarinense Shields and are outside the main shear belts or overlying the unaffected basement areas. These basins are characterized by alternation of volcanic cycles and siliciclastic sedimentation developed dominantly on a continental setting under subaerial conditions. This volcanism and the coeval plutonism evolved from high-K tholeiitic and calc-alkaline to shoshonitic and ended with a silica-saturated sodic alkaline magmatism, and its evolution were developed during at least 60 Ma. The compositional variation and evolution of post-collisional magmatism in southern Brazil are interpreted as the result mainly of melting of a heterogeneous mantle source, which includes garnet-phlogopite-bearing peridotites, veined-peridotites with abundant hydrated phases, such as amphibole, apatite and phlogopite, and eventually with the addition of an asthenospheric component. The subduction-related metasomatic character of post-collisional magmatism mantle sources in southern Brazil is put in evidence by Nb-negative anomalies and isotope features typical of EM1 sources.

  5. Effects of Gate Stack Structural and Process Defectivity on High-k Dielectric Dependence of NBTI Reliability in 32 nm Technology Node PMOSFETs

    Directory of Open Access Journals (Sweden)

    H. Hussin

    2014-01-01

    Full Text Available We present a simulation study on negative bias temperature instability (NBTI induced hole trapping in E′ center defects, which leads to depassivation of interface trap precursor in different geometrical structures of high-k PMOSFET gate stacks using the two-stage NBTI model. The resulting degradation is characterized based on the time evolution of the interface and hole trap densities, as well as the resulting threshold voltage shift. By varying the physical thicknesses of the interface silicon dioxide (SiO2 and hafnium oxide (HfO2 layers, we investigate how the variation in thickness affects hole trapping/detrapping at different stress temperatures. The results suggest that the degradations are highly dependent on the physical gate stack parameters for a given stress voltage and temperature. The degradation is more pronounced by 5% when the thicknesses of HfO2 are increased but is reduced by 11% when the SiO2 interface layer thickness is increased during lower stress voltage. However, at higher stress voltage, greater degradation is observed for a thicker SiO2 interface layer. In addition, the existence of different stress temperatures at which the degradation behavior differs implies that the hole trapping/detrapping event is thermally activated.

  6. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure.

    Science.gov (United States)

    Chen, Szu-Hung; Liao, Wen-Shiang; Yang, Hsin-Chia; Wang, Shea-Jue; Liaw, Yue-Gie; Wang, Hao; Gu, Haoshuang; Wang, Mu-Chun

    2012-08-01

    A three-dimensional (3D) fin-shaped field-effect transistor structure based on III-V metal-oxide-semiconductor field-effect transistor (MOSFET) fabrication has been demonstrated using a submicron GaAs fin as the high-mobility channel. The fin-shaped channel has a thickness-to-width ratio (TFin/WFin) equal to 1. The nano-stacked high-k Al2O3 dielectric was adopted as a gate insulator in forming a metal-oxide-semiconductor structure to suppress gate leakage. The 3D III-V MOSFET exhibits outstanding gate controllability and shows a high Ion/Ioff ratio > 105 and a low subthreshold swing of 80 mV/decade. Compared to a conventional Schottky gate metal-semiconductor field-effect transistor or planar III-V MOSFETs, the III-V MOSFET in this work exhibits a significant performance improvement and is promising for future development of high-performance n-channel devices based on III-V materials.

  7. A new spectrometer for grazing incidence X-ray fluorescence for the characterization of Arsenic implants and Hf based high-k layers

    International Nuclear Information System (INIS)

    Ingerle, D.; Meirer, F.; Zoeger, N.; Pepponi, G.; Giubertoni, D.; Steinhauser, G.; Wobrauschek, P.; Streli, C.

    2010-01-01

    Grazing Incidence X-ray Fluorescence Analysis (GIXRF) is a powerful technique for depth-profiling and characterization of thin layers in depths up to a few hundred nanometers. By measurement of fluorescence signals at various incidence angles Grazing Incidence X-ray Fluorescence Analysis provides information on depth distribution and total dose of the elements in the layers. The technique is very sensitive even in depths of a few nanometers. As Grazing Incidence X-ray Fluorescence Analysis does not provide unambigous depth profile information and needs a realistic input depth profile for fitting, in the context of the EC funded European Integrated Activity of Excellence and Networking for Nano and Micro-Electronics Analysis (ANNA) Grazing Incidence X-ray Fluorescence Analysis is used as a complementary technique to Secondary Ion Mass Spectrometry (SIMS) for the characterization of Ultra Shallow Junctions (USJ). A measuring chamber was designed, constructed and tested to meet the requirements of Grazing Incidence X-ray Fluorescence Analysis. A measurement protocol was developed and tested. Some results for As implants as well as Hf based high k layers on Silicon are shown. For the determination of the bulk As content of the wafers, Instrumental Neutron Activation Analysis has also been applied for comparison.

  8. Low-frequency noise in multilayer MoS2 field-effect transistors: the effect of high-k passivation.

    Science.gov (United States)

    Na, Junhong; Joo, Min-Kyu; Shin, Minju; Huh, Junghwan; Kim, Jae-Sung; Piao, Mingxing; Jin, Jun-Eon; Jang, Ho-Kyun; Choi, Hyung Jong; Shim, Joon Hyung; Kim, Gyu-Tae

    2014-01-07

    Diagnosing of the interface quality and the interactions between insulators and semiconductors is significant to achieve the high performance of nanodevices. Herein, low-frequency noise (LFN) in mechanically exfoliated multilayer molybdenum disulfide (MoS2) (~11.3 nm-thick) field-effect transistors with back-gate control was characterized with and without an Al2O3 high-k passivation layer. The carrier number fluctuation (CNF) model associated with trapping/detrapping the charge carriers at the interface nicely described the noise behavior in the strong accumulation regime both with and without the Al2O3 passivation layer. The interface trap density at the MoS2-SiO2 interface was extracted from the LFN analysis, and estimated to be Nit ~ 10(10) eV(-1) cm(-2) without and with the passivation layer. This suggested that the accumulation channel induced by the back-gate was not significantly influenced by the passivation layer. The Hooge mobility fluctuation (HMF) model implying the bulk conduction was found to describe the drain current fluctuations in the subthreshold regime, which is rarely observed in other nanodevices, attributed to those extremely thin channel sizes. In the case of the thick-MoS2 (~40 nm-thick) without the passivation, the HMF model was clearly observed all over the operation regime, ensuring the existence of the bulk conduction in multilayer MoS2. With the Al2O3 passivation layer, the change in the noise behavior was explained from the point of formation of the additional top channel in the MoS2 because of the fixed charges in the Al2O3. The interface trap density from the additional CNF model was Nit = 1.8 × 10(12) eV(-1) cm(-2) at the MoS2-Al2O3 interface.

  9. Bulk rock and mineral chemistries and ascent rates of high-K calc-alkalic epidote-bearing magmas, Northeastern Brazil

    Science.gov (United States)

    Brasilino, R. G.; Sial, A. N.; Ferreira, V. P.; Pimentel, M. M.

    2011-12-01

    A manifestation of the Pan-African-Brasiliano orogeny (700-550 Ma) in northeastern Brazil was the emplacement of widespread Neoproterozoic granitoids in diverse tectonic terranes. Among these plutons are the magmatic epidote-bearing Conceição das Creoulas, Caldeirão Encantado, Murici, and Boqueirão plutons, located close to the boundary between the Alto Pajeú and Cachoeirinha-Salgueiro terranes. The plutons are high-K calc-alkalic granodiorites to monzogranites, with tabular K-feldspar megacrysts. Pistacite [atomic Fe+ 3/(Fe3++ Al)] in epidote in these granitoids ranges from 21 to 27%. High oxygen fugacity (log fO2 - 19 to - 13) and the preservation of epidote suggest that the magma was oxidized. Al-in-hornblende barometry indicates hornblende solidification between 6 and 8 kbar, at 620 to 780 °C according to the hornblende-plagioclase thermometer. Zircon saturation thermometry attests to a near-liquidus temperature range from 794 to 853 °C. Partial corrosion of magmatic epidote in these four plutons occurred during an interval of no more than 10-30 years, which corresponds to maximum magma ascent rates of 650-1000 m/year. Diking, associated with regional shearing, probably facilitated rapid transport of granitic magma through hot continental crust at peak metamorphism, and permitted survival of epidote that was out of equilibrium at the low pressure of final emplacement. Similarities between mineralogical composition, chemistry, and isotopic compositions (εNd(0.60Ga) between - 2 and - 5,TDM from 1.2 to 1.3 Ga, δ18O values > 10‰, V-SMOW) of these four plutons and Neoproterozoic magmatic epidote-bearing plutons elsewhere in northeastern Brazil, argue for similar metabasaltic/mafic sources that had previously experienced low-temperature alteration.

  10. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  11. Can the scaling behavior of electric conductivity be used to probe the self-organizational changes in solution with respect to the ionic liquid structure? The case of [C8MIM][NTf2].

    Science.gov (United States)

    Paluch, Marian; Wojnarowska, Zaneta; Goodrich, Peter; Jacquemin, Johan; Pionteck, Jürgen; Hensel-Bielowka, Stella

    2015-08-28

    Electrical conductivity of the supercooled ionic liquid [C8MIM][NTf2], determined as a function of temperature and pressure, highlights strong differences in its ionic transport behavior between low and high temperature regions. To date, the crossover effect which is very well known for low molecular van der Waals liquids has been rarely described for classical ionic liquids. This finding highlights that the thermal fluctuations could be dominant mechanisms driving the dramatic slowing down of ion motions near Tg. An alternative way to analyze separately low and high temperature dc-conductivity data using a density scaling approach was then proposed. Based on which a common value of the scaling exponent γ = 2.4 was obtained, indicating that the applied density scaling is insensitive to the crossover effect. By comparing the scaling exponent γ reported herein along with literature data for other ionic liquids, it appears that γ decreases by increasing the alkyl chain length on the 1-alkyl-3-methylimidazolium-based ionic liquids. This observation may be related to changes in the interaction between ions in solution driven by an increase in the van der Waals type interaction by increasing the alkyl chain length on the cation. This effect may be related to changes in the ionic liquid nanostructural organization with the alkyl chain length on the cation as previously reported in the literature based on molecular dynamic simulations. In other words, the calculated scaling exponent γ may be then used as a key parameter to probe the interaction and/or self-organizational changes in solution with respect to the ionic liquid structure.

  12. Lo fantástico más allá de la vacilación: la representación mimética del miedo en dos cuentos de Bioy Casares y Cortázar

    Directory of Open Access Journals (Sweden)

    Andreas Kurz

    2014-07-01

    Full Text Available El artículo revisa algunos conceptos y definiciones de lo fantástico literario y pretende diferenciarlo de lo postulado por el realismo mágico y lo real maravilloso. Se proponen como textos clave al respecto: el libro de Franz Roh que da nombre al realismo mágico, la historia de la literatura fantástica, por H. P. Lovecraft; así como la tesis de ‘das Unheimliche’, de S. Freud. A manera de hipótesis, establecemos el carácter mimético de la literatura fantástica que representa el miedo, en oposición a la idea de vacilación expuesta por Todorov. Finalmente, pretendemos testar nuestra hipótesis mediante el análisis de dos cuentos canónicos escritos por Bioy Casares y Cortázar. This article explains some concepts and definitions of fantastic literature and tries to separate them from ´realismo mágico’ and ‘lo real maravilloso’. Franz Roh’s book, H. P. Lovecraft’s history of fantastic literature and Freud’s concept of the ‘unheimlich’ are used as key texts to reach this aim. Our principal hypothesis states the mimetic character and the representation of fear as the main ingredients of fantastic literature, opposing the idea of vacillation exposed by Todorov. We try to test our hypothesis in the analysis of two canonical short stories by Bioy Casares and Cortázar

  13. Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate

    International Nuclear Information System (INIS)

    Liu, Hsi-Wen; Tsai, Jyun-Yu; Liu, Kuan-Ju; Lu, Ying-Hsin; Chang, Ting-Chang; Chen, Ching-En; Tseng, Tseung-Yuen; Lin, Chien-Yu; Cheng, Osbert; Huang, Cheng-Tung; Ye, Yi-Han

    2016-01-01

    This work investigates the effect on hot carrier degradation (HCD) of doping zirconium into the hafnium oxide high-k layer in the nanoscale high-k/metal gate n-channel metal-oxide-semiconductor field-effect-transistors. Previous n-metal-oxide semiconductor-field effect transistor studies demonstrated that zirconium-doped hafnium oxide reduces charge trapping and improves positive bias temperature instability. In this work, a clear reduction in HCD is observed with zirconium-doped hafnium oxide because channel hot electron (CHE) trapping in pre-existing high-k bulk defects is the main degradation mechanism. However, this reduced HCD became ineffective at ultra-low temperature, since CHE traps in the deeper bulk defects at ultra-low temperature, while zirconium-doping only passivates shallow bulk defects.

  14. In situ atomic layer nitridation on the top and down regions of the amorphous and crystalline high-K gate dielectrics

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Meng-Chen [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Lee, Min-Hung [Institute of Electro-Optical Science and Technology, National Taiwan Normal University, Taipei 11677, Taiwan (China); Kuo, Chin-Lung; Lin, Hsin-Chih [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China); Chen, Miin-Jang, E-mail: mjchen@ntu.edu.tw [Department of Materials Science and Engineering, National Taiwan University, Taipei 10617, Taiwan (China)

    2016-11-30

    Highlights: • The structural and electrical characteristics of the ZrO{sub 2} high-K dielectrics, treated with the in situ atomic layer doping of nitrogen into the top and down regions (top and down nitridation, TN and DN, respectively), were investigated. • The amorphous DN sample has a lower leakage current density (J{sub g}) than the amorphous TN sample, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). • The crystalline TN sample exhibited a lower CET and a similar J{sub g} as compared with the crystalline DN sample, which can be ascribed to the suppression of IL regrowth. • The crystalline ZrO{sub 2} with in situ atomic layer doping of nitrogen into the top region exhibited superior scaling limit, electrical characteristics, and reliability. - Abstract: Amorphous and crystalline ZrO{sub 2} gate dielectrics treated with in situ atomic layer nitridation on the top and down regions (top and down nitridation, abbreviated as TN and DN) were investigated. In a comparison between the as-deposited amorphous DN and TN samples, the DN sample has a lower leakage current density (J{sub g}) of ∼7 × 10{sup −4} A/cm{sup 2} with a similar capacitance equivalent thickness (CET) of ∼1.53 nm, attributed to the formation of SiO{sub x}N{sub y} in the interfacial layer (IL). The post-metallization annealing (PMA) leads to the transformation of ZrO{sub 2} from the amorphous to the crystalline tetragonal/cubic phase, resulting in an increment of the dielectric constant. The PMA-treated TN sample exhibits a lower CET of 1.22 nm along with a similar J{sub g} of ∼1.4 × 10{sup −5} A/cm{sup 2} as compared with the PMA-treated DN sample, which can be ascribed to the suppression of IL regrowth. The result reveals that the nitrogen engineering in the top and down regions has a significant impact on the electrical characteristics of amorphous and crystalline ZrO{sub 2} gate dielectrics, and the nitrogen incorporation at the top of crystalline

  15. MIM: Math in Motion for K-2

    Science.gov (United States)

    Chevalier, Cheryl; Pippen, Mary H.; Stevens, Dorothy

    2008-01-01

    The authors describe a hands-on program that they developed after their attendance at the NCTM Algebra Academy. The article explains how to use literature to capture youngsters' attention and engage them in interactive mathematical activities.

  16. Descobrir Galisson foi reconfortante para mim!

    Directory of Open Access Journals (Sweden)

    Isabel Alarcão

    2016-12-01

    Full Text Available Adoptant une logique d’expérientialisme critique, l’auteur révèle comment sa rencontre avec la pensée de Galisson a dissipé ses doutes et l’a incitée à conceptualiser la Didactique des Langues-Cultures (DLC en tant que discipline de formation, de recherche et d’intervention. Chez ce didactologue, elle a découvert des problématisations concernant des questions qu’elle avait également amorcées sur la nature de la DLC, son autonomie, sa liaison avec la linguistique appliquée, sa dimension interactive, l’observation-problématisation et la théorisation interne, le recours à des savoirs issus d’autres disciplines, le rapport entre les connaissances académiques et les pratiques professionnelles et la conceptualisation en tant qu’ alternative à l’applicationnisme.

  17. MIM in 3D: dream or reality?

    NARCIS (Netherlands)

    Klootwijk, J.H.; Jinesh, K.B.; Roozeboom, F.

    2011-01-01

    Last decades great effort has been put in the development of 3D capacitors. These capacitors are used for RF decoupling and should therefore have a high capacitance density associated with a sufficient breakdown voltage. Increased capacitance densities have been achieved by exploring the use of the

  18. QUANDO FOGEM DE MIM NA ESCOLA…

    Directory of Open Access Journals (Sweden)

    Cristina Madureira

    2016-07-01

    Full Text Available Introdução: A Displasia Craniofrontonasal (CFND é uma doença rara ligada ao X, caracterizada por malformações cra- niofaciais graves, paradoxalmente associada a fenótipos mais exuberantes no sexo feminino. Caso Clínico: sexo feminino, pais jovens não consanguí- neos e sem antecedentes familiares relevantes, orientada para a consulta de Pediatria por malformações craniofaciais. Apre- sentava craniossinostose coronal com assimetria craniofacial e braquiturricefalia, fronte alta, larga e proeminente, hipertelorismo acentuado, ponta nasal bífida e baixa implantação dos pavilhões auriculares. Evidência de clinodactilia do 5º dedo e háluces lar- gos. O estudo genético identificou uma mutação frameshift no gene EFBN1 no cromossoma X, confirmando o diagnóstico de CFND. O estudo genético dos pais foi normal (mutação de novo. Foi orientada para a consulta de Genética Médica e de Cirurgia Plástica (rinoplastia e várias cirurgias de correção de hipertelorismo. O desenvolvimento psicomotor foi adequado e após ingresso no 1º ciclo verificaram-se dificuldades na adaptação escolar e relação com os pares, com aproveitamento satisfató- rio. A avaliação psicológica revelou baixa autoestima, ansiedade face à exposição social e dificuldade em lidar com a frustração. Atualmente apresenta dismorfias faciais com correção parcial, escoliose ligeira e miopia/astigmatismo, mantendo seguimento multidisciplinar. Comentários: Os autores pretendem alertar para a existência desta síndrome genética, assim como realçar a necessida- de de uma abordagem multidisciplinar destes casos. A par do tratamento cirúrgico, é fundamental o aconselhamento genético e o acompanhamento psicológico destas doentes, pela baixa autoestima e pelo risco de exclusão social associados a esta síndrome.

  19. Decorating TiO2 Nanowires with BaTiO3 Nanoparticles: A New Approach Leading to Substantially Enhanced Energy Storage Capability of High-k Polymer Nanocomposites.

    Science.gov (United States)

    Kang, Da; Wang, Guanyao; Huang, Yanhui; Jiang, Pingkai; Huang, Xingyi

    2018-01-31

    The urgent demand of high energy density and high power density devices has triggered significant interest in high dielectric constant (high-k) flexible nanocomposites comprising dielectric polymer and high-k inorganic nanofiller. However, the large electrical mismatch between polymer and nanofiller usually leads to earlier electric failure of the nanocomposites, resulting in an undesirable decrease of electrical energy storage capability. A few studies show that the introduction of moderate-k shell onto a high-k nanofiller surface can decrease the dielectric constant mismatch, and thus, the corresponding nanocomposites can withstand high electric field. Unfortunately, the low apparent dielectric enhancement of the nanocomposites and high electrical conductivity mismatch between matrix and nanofiller still result in low energy density and low efficiency. In this study, it is demonstrated that encapsulating moderate-k nanofiller with high-k but low electrical conductivity shell is effective to significantly enhance the energy storage capability of dielectric polymer nanocomposites. Specifically, using BaTiO 3 nanoparticles encapsulated TiO 2 (BaTiO 3 @TiO 2 ) core-shell nanowires as filler, the corresponding poly(vinylidene fluoride-co-hexafluoropylene) nanocomposites exhibit superior energy storage capability in comparison with the nanocomposites filled by either BaTiO 3 or TiO 2 nanowires. The nanocomposite film with 5 wt % BaTiO 3 @TiO 2 nanowires possesses an ultrahigh discharged energy density of 9.95 J cm -3 at 500 MV m -1 , much higher than that of commercial biaxial-oriented polypropylene (BOPP) (3.56 J cm -3 at 600 MV m -1 ). This new strategy and corresponding results presented here provide new insights into the design of dielectric polymer nanocomposites with high electrical energy storage capability.

  20. Intégration de matériaux à forte permittivité électrique (High-k) dans les mémoires non-volatiles pour les générations sub-45nm

    OpenAIRE

    Bocquet , Marc

    2009-01-01

    Flash memory is today a major element for the development of the portable electronics which require more and more memory capability at low cost (netbook, cell phones, PDA, USB sticks...). In order to maintain it for the years to come, it is necessary to continue improving this technology. Also, the integration of High-k materials and the use of trap charge memories are strongly envisaged. This PhD focuses on the integration and the electrical study (fixed charge, trapping, leakage currents......

  1. Influence of ultra-thin TiN thickness (1.4 nm and 2.4 nm) on positive bias temperature instability (PBTI) of high-k/metal gate nMOSFETs with gate-last process

    International Nuclear Information System (INIS)

    Qi Lu-Wei; Yang Hong; Ren Shang-Qing; Xu Ye-Feng; Luo Wei-Chun; Xu Hao; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2015-01-01

    The positive bias temperature instability (PBTI) degradations of high-k/metal gate (HK/MG) nMOSFETs with thin TiN capping layers (1.4 nm and 2.4 nm) are systemically investigated. In this paper, the trap energy distribution in gate stack during PBTI stress is extracted by using ramped recovery stress, and the temperature dependences of PBTI (90 °C, 125 °C, 160 °C) are studied and activation energy (E a ) values (0.13 eV and 0.15 eV) are extracted. Although the equivalent oxide thickness (EOT) values of two TiN thickness values are almost similar (0.85 nm and 0.87 nm), the 2.4-nm TiN one (thicker TiN capping layer) shows better PBTI reliability (13.41% at 0.9 V, 90 °C, 1000 s). This is due to the better interfacial layer/high-k (IL/HK) interface, and HK bulk states exhibited through extracting activation energy and trap energy distribution in the high-k layer. (paper)

  2. Modeling slug tests in unconfined aquifers with both oscillatory and overdamped responses, and with low-K and high-K skin effects

    Science.gov (United States)

    Thoma, M. J.; Malama, B.; Barrash, W.; Bohling, G.; Butler, J. J.

    2009-12-01

    We extend the models for slug tests developed by Hyder et al. (1994) and Butler and Zhan (2004) to obtain a single general model for slug tests in unconfined aquifers in partially penetrating wells with a near-well disturbed zone (skin). The full range of responses, oscillatory to overdamped, is considered since both types of responses are common in wells in unconsolidated coarse fluvial aquifers, and others. The general semi-analytical solution allows for skin and formation storage as well as anisotropy in skin and formation hydraulic conductivity (K). The water table is treated as a fixed head boundary so the solution is applicable for wells screened below the water table. The model is validated by comparison with other models and by matching field data from unconfined fluvial aquifers at sites in Nebraska (MSEA) and Idaho (BHRS). We examine the effects of varying skin K and skin thickness to simulate the impact of a near-well disturbed zone that is lower (damage) or higher (filter pack) K than the formation. Results indicate that, for a given set of measured behavior at an example test zone, minor progressive decreases in estimated formation K occur with increases in assumed skin K, and moderate increases in estimated formation K occur with decreases in assumed skin K. Major increases (orders of magnitude) in estimated formation K occur with increased thickness of low-K skin. The importance of incorporating a finite-thickness representation of the skin, rather than the conventional infinitely thin representation, is also addressed.

  3. Electrical characterization of ALD HfO2 high-k dielectrics on ( 2 ¯ 01) β-Ga2O3

    Science.gov (United States)

    Shahin, David I.; Tadjer, Marko J.; Wheeler, Virginia D.; Koehler, Andrew D.; Anderson, Travis J.; Eddy, Charles R.; Christou, Aris

    2018-01-01

    The electrical quality of HfO2 dielectrics grown by thermal atomic layer deposition at 175 °C on n-type ( 2 ¯ 01) β-Ga2O3 has been studied through capacitance- and current-voltage measurements on metal-oxide-semiconductor capacitors. These capacitors exhibited excellent electrical characteristics, including dual-sweep capacitance-voltage curves with low hysteresis and stretch-out and a frequency-stable dielectric constant of k˜14 when measured between 10 kHz and 1 MHz. The C-V curves exhibited a uniform and repeatable +1.05 V shift relative to the ideal case when swept from 3.5 to -5 V, yielding positively measured flatband (+2.15 V) and threshold (+1.05 V) voltages that may be useful for normally off n-channel Ga2O3 devices. Using the Terman method, an average interface trap density of 1.3 × 1011 cm-2.eV-1 was obtained between 0.2 and 0.6 eV below the conduction band edge. The forward bias current-voltage characteristic was successfully fitted to the Fowler-Nordheim tunneling model at a field strength of 5 MV/cm, allowing an extraction of a 1.3 eV conduction band offset between HfO2 and Ga2O3, which matches the value previously determined from x-ray photoelectron spectroscopy. However, a temperature dependence in the leakage current was observed. These results suggest that HfO2 is an appealing dielectric for Ga2O3 device applications.

  4. Estudio de la influencia de la morfología y de la distribución de tamaños de partícula del polvo en la obtención de aleaciones base Cu y base Ni mediante la tecnología MIM

    OpenAIRE

    Contreras Andújar, José Manuel

    2008-01-01

    En las últimas dos décadas, el procesado mediante moldeo por inyección de polvos metálicos (MIM) ha sido una tecnología que ha experimentado un notable crecimiento año tras año debido a que constituye una alternativa rentable para la fabricación de piezas de pequeño tamaño y difícil geometría. Sin embargo, una de sus mayores limitaciones como tecnología es el alto coste que presentan los polvos metálicos con morfología esférica y pequeño tamaño de partícula que se utilizan normalmente en esta...

  5. Synchrotron radiation x-ray photoelectron spectroscopy study on the interface chemistry of high-k PrxAl2-xO3 (x=0-2) dielectrics on TiN for dynamic random access memory applications

    Science.gov (United States)

    Schroeder, T.; Lupina, G.; Sohal, R.; Lippert, G.; Wenger, Ch.; Seifarth, O.; Tallarida, M.; Schmeisser, D.

    2007-07-01

    Engineered dielectrics combined with compatible metal electrodes are important materials science approaches to scale three-dimensional trench dynamic random access memory (DRAM) cells. Highly insulating dielectrics with high dielectric constants were engineered in this study on TiN metal electrodes by partly substituting Al in the wide band gap insulator Al2O3 by Pr cations. High quality PrAlO3 metal-insulator-metal capacitors were processed with a dielectric constant of 19, three times higher than in the case of Al2O3 reference cells. As a parasitic low dielectric constant interface layer between PrAlO3 and TiN limits the total performance gain, a systematic nondestructive synchrotron x-ray photoelectron spectroscopy study on the interface chemistry of PrxAl2-xO3 (x =0-2) dielectrics on TiN layers was applied to unveil its chemical origin. The interface layer results from the decreasing chemical reactivity of PrxAl2-xO3 dielectrics with increasing Pr content x to reduce native Ti oxide compounds present on unprotected TiN films. Accordingly, PrAlO3 based DRAM capacitors require strict control of the surface chemistry of the TiN electrode, a parameter furthermore of importance to engineer the band offsets of PrxAl2-xO3/TiN heterojunctions.

  6. Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high- k metal gate NMOSFET with kMC TDDB simulations

    International Nuclear Information System (INIS)

    Xu Hao; Yang Hong; Luo Wei-Chun; Xu Ye-Feng; Wang Yan-Rong; Tang Bo; Wang Wen-Wu; Qi Lu-Wei; Li Jun-Feng; Yan Jiang; Zhu Hui-Long; Zhao Chao; Chen Da-Peng; Ye Tian-Chun

    2016-01-01

    The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high- k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it / N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. (paper)

  7. High-k 3D-barium titanate foam/phenolphthalein poly(ether sulfone)/cyanate ester composites with frequency-stable dielectric properties and extremely low dielectric loss under reduced concentration of ceramics

    Science.gov (United States)

    Zheng, Longhui; Yuan, Li; Guan, Qingbao; Liang, Guozheng; Gu, Aijuan

    2018-01-01

    Higher dielectric constant, lower dielectric loss and better frequency stability have been the developing trends for high dielectric constant (high-k) materials. Herein, new composites have been developed through building unique structure by using hyperbranched polysiloxane modified 3D-barium titanate foam (BTF) (BTF@HSi) as the functional fillers and phenolphthalein poly(ether sulfone) (cPES)/cyanate ester (CE) blend as the resin matrix. For BTF@HSi/cPES/CE composite with 34.1 vol% BTF, its dielectric constant at 100 Hz is as high as 162 and dielectric loss is only 0.007; moreover, the dielectric properties of BTF@HSi/cPES/CE composites exhibit excellent frequency stability. To reveal the mechanism behind these attractive performances of BTF@HSi/cPES/CE composites, three kinds of composites (BTF/CE, BTF/cPES/CE, BTF@HSi/CE) were prepared, their structure and integrated performances were intensively investigated and compared with those of BTF@HSi/cPES/CE composites. Results show that the surface modification of BTF is good for preparing composites with improved thermal stability; while introducing flexible cPES to CE is beneficial to fabricate composites with good quality through effectively blocking cracks caused by the stress concentration, and then endowing the composites with good dielectric properties at reduced concentration of ceramics.

  8. A highly symmetrical 10 transistor 2-read/write dual-port static random access memory bitcell design in 28 nm high-k/metal-gate planar bulk CMOS technology

    Science.gov (United States)

    Ishii, Yuichiro; Tanaka, Miki; Yabuuchi, Makoto; Sawada, Yohei; Tanaka, Shinji; Nii, Koji; Lu, Tien Yu; Huang, Chun Hsien; Sian Chen, Shou; Tse Kuo, Yu; Lung, Ching Cheng; Cheng, Osbert

    2018-04-01

    We propose a highly symmetrical 10 transistor (10T) 2-read/write (2RW) dual-port (DP) static random access memory (SRAM) bitcell in 28 nm high-k/metal-gate (HKMG) planar bulk CMOS. It replaces the conventional 8T 2RW DP SRAM bitcell without any area overhead. It significantly improves the robustness of process variations and an asymmetric issue between the true and bar bitline pairs. Measured data show that read current (I read) and read static noise margin (SNM) are respectively boosted by +20% and +15 mV by introducing the proposed bitcell with enlarged pull-down (PD) and pass-gate (PG) N-channel MOSs (NMOSs). The minimum operating voltage (V min) of the proposed 256 kbit 10T DP SRAM is 0.53 V in the TT process, 25 °C under the worst access condition with read/write disturbances, and improved by 90 mV (15%) compared with the conventional one.

  9. A literatura infanto-juvenil como “suporte” na formação didática de professores de língua materna: uma reflexão teórico-metodológica a partir do texto de Elias José, em Uma escola assim, eu quero pra mim

    Directory of Open Access Journals (Sweden)

    Maria Lúcia Ribeiro de Oliveira

    2010-11-01

    Full Text Available ResumoO objetivo deste estudo é chamar a atenção dos docentes que trabalham na formação de professores delíngua materna, notadamente nos cursos de pedagogia e letras, para a função didática da literatura infantojuvenil.Em Uma escola assim, eu quero pra mim, publicada em 1997. Elias José, formado em letras epedagogia, aborda problemas e soluções de caráter sociolinguístico que podem ocorrer no contexto da salade aula. Ele conta a trajetória escolar de um menino que falava diferente por ser da zona rural e que, graçasa uma professora cheia de criatividade e intuição pedagógica, consegue transformar o inferno em que elevivia na escola, inicialmente, com uma professora bastante repressora e cheia de preconceito, numverdadeiro paraíso em que estudar era algo prazeroso, lúdico e transformador.

  10. The MIM web gateway to IP multicast e-meetings

    Science.gov (United States)

    Parviainen, Roland; Parnes, Peter

    2003-12-01

    As video conferencing and e-meeting systems are used more and more on the Internet and in businesses it becomes increasingly important to be able to participate from any computer at any location. Often this is impossible, since these systems requires often special software that are not available everywhere or impossible to install for administrative reasons. Many locations also lack the necessary network infrastructure such as IP multicast. This paper presents a WWW gateway system that enables users to participate using only a standard web browser. The design and architecture of the system are described and performance tests that show the scalability of the system are also presented.

  11. Rheological assessment of titanium MIM feedstocks [Conference paper

    CSIR Research Space (South Africa)

    Benson, JM

    2010-10-01

    Full Text Available of minimising the cost over the total production chain. Powder metallurgy technologies play a crucial role within this, as the output of the existing and potential primary metal production methods is in the form of sponge or powder. By using PM costly resmelting...

  12. Rheological assessment of titanium MIM feedstocks [Journal article

    CSIR Research Space (South Africa)

    Benson, JM

    2011-03-01

    Full Text Available of minimizing the costs over the total production chain. Powder metallurgy (PM) technologies play a crucial role within this, as the output of the existing and potential primary metal production methods is in the form of sponge or powder. By using PM, costly...

  13. TU-PIS-Exhibit Hall-2: Deformable Image Registration, Contour Propagation, and Dose Mapping inMIM Maestro - MIM Software

    International Nuclear Information System (INIS)

    Piper, J.

    2015-01-01

    Brachytherapy devices and software are designed to last for a certain period of time. Due to a number of considerations, such as material factors, wear-and-tear, backwards compatibility, and others, they all reach a date when they are no longer supported by the manufacturer. Most of these products have a limited duration for their use, and the information is provided to the user at time of purchase. Because of issues or concerns determined by the manufacturer, certain products are retired sooner than the anticipated date, and the user is immediately notified. In these situations, the institution is facing some difficult choices: remove these products from the clinic or perform tests and continue their usage. Both of these choices come with a financial burden: replacing the product or assuming a potential medicolegal liability. This session will provide attendees with the knowledge and tools to make better decisions when facing these issues. Learning Objectives: Understand the meaning of “end-of-life or “life expectancy” for brachytherapy devices and software Review items (devices and software) affected by “end-of-life” restrictions Learn how to effectively formulate “end-of-life” policies at your institution Learn about possible implications of “end-of-life” policy Review other possible approaches to “end-of-life” issue

  14. TU-PIS-Exhibit Hall-2: Deformable Image Registration, Contour Propagation, and Dose Mapping inMIM Maestro - MIM Software

    Energy Technology Data Exchange (ETDEWEB)

    Piper, J. [MIM Software, Inc. (United States)

    2015-06-15

    Brachytherapy devices and software are designed to last for a certain period of time. Due to a number of considerations, such as material factors, wear-and-tear, backwards compatibility, and others, they all reach a date when they are no longer supported by the manufacturer. Most of these products have a limited duration for their use, and the information is provided to the user at time of purchase. Because of issues or concerns determined by the manufacturer, certain products are retired sooner than the anticipated date, and the user is immediately notified. In these situations, the institution is facing some difficult choices: remove these products from the clinic or perform tests and continue their usage. Both of these choices come with a financial burden: replacing the product or assuming a potential medicolegal liability. This session will provide attendees with the knowledge and tools to make better decisions when facing these issues. Learning Objectives: Understand the meaning of “end-of-life or “life expectancy” for brachytherapy devices and software Review items (devices and software) affected by “end-of-life” restrictions Learn how to effectively formulate “end-of-life” policies at your institution Learn about possible implications of “end-of-life” policy Review other possible approaches to “end-of-life” issue.

  15. Focusing on a Probability Element: Parameter Selection of Message Importance Measure in Big Data

    OpenAIRE

    She, Rui; Liu, Shanyun; Dong, Yunquan; Fan, Pingyi

    2017-01-01

    Message importance measure (MIM) is applicable to characterize the importance of information in the scenario of big data, similar to entropy in information theory. In fact, MIM with a variable parameter can make an effect on the characterization of distribution. Furthermore, by choosing an appropriate parameter of MIM,it is possible to emphasize the message importance of a certain probability element in a distribution. Therefore, parametric MIM can play a vital role in anomaly detection of bi...

  16. Surge en mi otra mujer: significados del consumo de alcohol en mujeres mexicanas Surge em mim outra mulher: significados do consumo de álcool em mulheres mexicanas Another woman comes up in me: Meanings of alcohol consumption in Mexican women

    Directory of Open Access Journals (Sweden)

    Leticia Cortaza Ramírez

    2008-12-01

    ócio-culturais (o mim que às da própria pessoa (o Eu, que o álcool incentivava a expressão de seu "eu", e que descobriam a existência de "outra pessoa" dentro de si, que normalmente não se manifestava.This descriptive study with a qualitative approach is aimed to try to understand the meanings that Mexican women attribute to alcohol consumption. The methodological reference framework was the case study, from the theoretical perspective of Symbolic Interactionism. Ten women participated in this study. Data was recollected through semi-structured interviews. The interviews were recorded, transcribed, coded and categorized, based on the analysis of the content analysis. The study revealed that alcohol makes the women become another person the one they really wanted to be> This is mainly the reason why they continued drinking on a regular basis, at increasing levels. In the context of Symbolic Interactionism, we observed that these women's self was restricted by the daily demands, consolidating a Self that responds more to the sociocultural expectatives (me than to their own (I expectations. They discovered that alcohol stimulated the expression of their selves , unleashing another person inside them, which normally does not manifest itself

  17. Structural properties and sensing performance of high-k Nd2TiO5 thin layer-based electrolyte-insulator-semiconductor for pH detection and urea biosensing.

    Science.gov (United States)

    Pan, Tung-Ming; Lin, Jian-Chi; Wu, Min-Hsien; Lai, Chao-Sung

    2009-05-15

    For high sensitive pH sensing, an electrolyte-insulator-semiconductor (EIS) device with Nd(2)TiO(5) thin layers fabricated on Si substrates by means of reactive sputtering and the subsequent post-deposition annealing (PDA) treatment was proposed. In this work, the effect of thermal annealing (600, 700, 800, and 900 degrees C) on the structural characteristics of Nd(2)TiO(5) thin layer was investigated by X-ray diffraction, X-ray photoelectron spectroscopy, and atomic force microscopy. The observed structural properties were then correlated with the resulting pH sensing performances. For enzymatic field-effect-transistors-based urea biosensing, a hybrid configuration of the proposed Nd(2)TiO(5) thin layer with urease-immobilized alginate film attached was established. Within the experimental conditions investigated, the EIS device with the Nd(2)TiO(5) thin layer annealed at 800 degrees C exhibited a higher pH detection sensitivity of 57.2 mV/pH, a lower hysteresis voltage of 2.33 mV, and a lower drift rate of 1.80 mV/h compared to those at other annealing temperatures. These results are attributed to the formation of a thinner low-k interfacial layer at the oxide/Si interface and the higher surface roughness occurred at this annealing temperature. Furthermore, the presented urea biosensor was also proved to be able to detect urea with good linearity (R(2)=0.99) and reasonable sensitivity of 9.52 mV/mM in the urea concentration range of 3-40 mM. As a whole, the present work has provided some fundamental data for the use of Nd(2)TiO(5) thin layer for EIS-based pH detection and the extended application for biosensing.

  18. Physics of nanoplatforms and their applications in nanomanufacturing and nanomedicine

    Science.gov (United States)

    Gultepe, Evin

    semiconductor electronics applications. We also demonstrated that nanoporous oxide coatings can be utilized as noneroding sustained drug release platforms for up to weeks of elution. The release kinetics was explained in two main regions: burst and sustained release. The sustained release kinetics for nanoporous coatings was characterized as an activated surface density dependent desorption model in form of df/dt = alphafexp(--beta f2/kBT). Nanoporous inorganic coatings were proved to be well suited to provide improved efficacy and integration of implants in a variety of therapeutic situations like drug eluting stents or antibiotic coated hip replacements. The second type of nanoplatform we investigated is magnetic nanoparticles. Magnetic properties differ in nanoscale due to the increasing role of the surface spins as the particle size is decreased, leading very interesting phenomenon like superparamagnetism. We studied magnetic properties of nanoparticles, namely superparamagnetic iron oxide nanoparticles (SPION). Magnetic properties of SPION was studied through superconducting quantum interference device (SQUID) magnetization as well as nuclear magnetic resonance (NMR) spectroscopy measurements. We showed that SPION can be successfully encapsulated inside micelle and liposome structures to create versatile theranostic nanoplatforms for enhanced drug delivery and monitoring of cancer treatment. The ability to incorporate SPION cargo renders these nanoplatforms to be highly susceptible to guidance by external magnetic fields, as well as making them exceptional magnetic resonance imaging (MRI) contrast agents, enabling visualization of their distribution in vivo. The efficacy of using magnetic immuno-micelles (MIM) and magnetic cationic liposomes (MCL) for magnetic targeting and as MRI contrast agents was investigated using in vitro NMR and in-vivo MRI studies. For micelle study, human breast carcinoma cells were incubated with specific anti-body attached MIM. NMR measurements

  19. 4f-5d hybridization in a high k dielectric

    International Nuclear Information System (INIS)

    Losovyj, Ya.B.; Tang, Jinke; Wang, Wendong; Hong Yuanjia; Palshin, Vadim; Tittsworth, Roland

    2006-01-01

    While intra-atomic f-d hybridization is expected, experimental confirmation of f-d hybridization in the photoemission final state leading to 4f band structure has been limited to 5f systems and compound systems with very shallow 4f levels. We demonstrate that core 4f states can contribute to the valence band structure in a wide band gap dielectric, in this case HfO 2 in the photoemission final state. In spite of the complications of sample charging, we find evidence of symmetry in the shallow 4f levels and wave vector dependent band dispersion, the latter consistent with the crystal structure of HfO 2

  20. Studies of high-K isomers in hafnium nuclei

    International Nuclear Information System (INIS)

    Sletten, G.; Gjoerup, N.L.

    1991-01-01

    K-isomeric states built on high-Ω Nilsson orbitals from deformation-aligned high-j levels near the Fermi surface are found to cluster in the neutron rich Hf, W and Os nuclei. It has been shown that some of the high seniority states of this type have decay properties that indicate strong mixing of configurations and that in Osmium nuclei γ-softness cause strong deviations from the well established K-selection rule. Also in the Hafnium nuclei is the expected forbiddenness in isomeric decays an order of magnitude smaller than expected from the K-selection rule. A new 9 quasiparticle isomer has been discovered in 175 Hf at I=57/2. This isomer has the anomalous decay as the dominant mode. Other lower seniority states are also identified. At spin 35/2 and 45/2 the deformation aligned states become yrast, but the structure of the yrast line to even higher spins is not yet understood. (author)

  1. Design and fabrication of metal-insulator-metal diode for high frequency applications

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2017-02-01

    Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

  2. Reconstitution of active mycobacterial binuclear iron monooxygenase complex in Escherichia coli.

    Science.gov (United States)

    Furuya, Toshiki; Hayashi, Mika; Kino, Kuniki

    2013-10-01

    Bacterial binuclear iron monooxygenases play numerous physiological roles in oxidative metabolism. Monooxygenases of this type found in actinomycetes also catalyze various useful reactions and have attracted much attention as oxidation biocatalysts. However, difficulties in expressing these multicomponent monooxygenases in heterologous hosts, particularly in Escherichia coli, have hampered the development of engineered oxidation biocatalysts. Here, we describe a strategy to functionally express the mycobacterial binuclear iron monooxygenase MimABCD in Escherichia coli. Sodium dodecyl sulfate-polyacrylamide gel electrophoretic analysis of the mimABCD gene expression in E. coli revealed that the oxygenase components MimA and MimC were insoluble. Furthermore, although the reductase MimB was expressed at a low level in the soluble fraction of E. coli cells, a band corresponding to the coupling protein MimD was not evident. This situation rendered the transformed E. coli cells inactive. We found that the following factors are important for functional expression of MimABCD in E. coli: coexpression of the specific chaperonin MimG, which caused MimA and MimC to be soluble in E. coli cells, and the optimization of the mimD nucleotide sequence, which led to efficient expression of this gene product. These two remedies enabled this multicomponent monooxygenase to be actively expressed in E. coli. The strategy described here should be generally applicable to the E. coli expression of other actinomycetous binuclear iron monooxygenases and related enzymes and will accelerate the development of engineered oxidation biocatalysts for industrial processes.

  3. Sr and Nd isotopic signature of the high-K calc-alkaline magmatism of the central Ribeira belt: the Sao Pedro Granite in Lumiar, RJ; Assinatura isotopica de Sr e Nd do magmatismo calcio-alcalino de alto-K na Faixa Ribeira central: o exemplo do Granito Sao Pedro em Lumiar, RJ

    Energy Technology Data Exchange (ETDEWEB)

    Mendes, Julio Cezar; Medeiros, Silvia Regina de; Chaves, Eduardo Amorim, E-mail: julio@geologia.ufrj.br, E-mail: silvia@geologia.ufrj.br, E-mail: edupc2@yahoo.com.br [Departamento de Geologia, Universidade Federal do Rio de Janeiro, Rio de Janeiro (RJ) (Brazil)

    2011-09-15

    In the central-northern Ribeira belt there are many granitic to granodioritic bodies showing varied shape and size, characterizing a late- to post-collisional Ca-alkaline, cordilleran I-type province. The Sao Pedro Granite occurs in the mountain region of Rio de Janeiro State as small post-collisional bodies. It presents isotropic fabric, equigranular to seriate inequigranular texture, as well as local concentration of allanite, which gives discrete composition and texture variation to the rock. The granite has a high-K calcalkaline to alkali-calcic character and weakly peraluminous nature. Despite its short geochemical variation, high Ba, Zr and Th contents besides low concentrations of MgO and CaO are noticeable. High REE contents are associated with fractionated REE patterns showing strong negative Eu anomalies. A crustal origin for the granite can be assumed by its very negative and positive .Nd and .Sr values, respectively, as well as by 87Sr/86Sr initial ratios ranging from 0,718 to 0,740. TDM ages point to paleoproterozoic source, which agrees with geological time of intensive crust generation. (author)

  4. 270GHz SiGe BiCMOS manufacturing process platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Preisler, Edward J.; Talor, George; Yan, Zhixin; Booth, Roger; Zheng, Jie; Chaudhry, Samir; Howard, David; Racanelli, Marco

    2011-11-01

    TowerJazz has been offering the high volume commercial SiGe BiCMOS process technology platform, SBC18, for more than a decade. In this paper, we describe the TowerJazz SBC18H3 SiGe BiCMOS process which integrates a production ready 240GHz FT / 270 GHz FMAX SiGe HBT on a 1.8V/3.3V dual gate oxide CMOS process in the SBC18 technology platform. The high-speed NPNs in SBC18H3 process have demonstrated NFMIN of ~2dB at 40GHz, a BVceo of 1.6V and a dc current gain of 1200. This state-of-the-art process also comes with P-I-N diodes with high isolation and low insertion losses, Schottky diodes capable of exceeding cut-off frequencies of 1THz, high density stacked MIM capacitors, MOS and high performance junction varactors characterized up to 50GHz, thick upper metal layers for inductors, and various resistors such as low value and high value unsilicided poly resistors, metal and nwell resistors. Applications of the SBC18H3 platform for millimeter-wave products for automotive radars, phased array radars and Wband imaging are presented.

  5. SiGe BiCMOS manufacturing platform for mmWave applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Preisler, Edward; Racanelli, Marco; Chaudhry, Samir; Blaschke, Volker

    2010-10-01

    TowerJazz offers high volume manufacturable commercial SiGe BiCMOS technology platforms to address the mmWave market. In this paper, first, the SiGe BiCMOS process technology platforms such as SBC18 and SBC13 are described. These manufacturing platforms integrate 200 GHz fT/fMAX SiGe NPN with deep trench isolation into 0.18μm and 0.13μm node CMOS processes along with high density 5.6fF/μm2 stacked MIM capacitors, high value polysilicon resistors, high-Q metal resistors, lateral PNP transistors, and triple well isolation using deep n-well for mixed-signal integration, and, multiple varactors and compact high-Q inductors for RF needs. Second, design enablement tools that maximize performance and lowers costs and time to market such as scalable PSP and HICUM models, statistical and Xsigma models, reliability modeling tools, process control model tools, inductor toolbox and transmission line models are described. Finally, demonstrations in silicon for mmWave applications in the areas of optical networking, mobile broadband, phased array radar, collision avoidance radar and W-band imaging are listed.

  6. Mixed-signal 0.18μm CMOS and SiGe BiCMOS foundry technologies for ROIC applications

    Science.gov (United States)

    Kar-Roy, Arjun; Howard, David; Racanelli, Marco; Scott, Mike; Hurwitz, Paul; Zwingman, Robert; Chaudhry, Samir; Jordan, Scott

    2010-10-01

    Today's readout integrated-circuits (ROICs) require a high level of integration of high performance analog and low power digital logic. TowerJazz offers a commercial 0.18μm CMOS technology platform for mixed-signal, RF, and high performance analog applications which can be used for ROIC applications. The commercial CA18HD dual gate oxide 1.8V/3.3V and CA18HA dual gate oxide 1.8V/5V RF/mixed signal processes, consisting of six layers of metallization, have high density stacked linear MIM capacitors, high-value resistors, triple-well isolation and thick top aluminum metal. The CA18HA process also has scalable drain extended LDMOS devices, up to 40V Vds, for high-voltage sensor applications, and high-performance bipolars for low noise requirements in ROICs. Also discussed are the available features of the commercial SBC18 SiGe BiCMOS platform with SiGe NPNs operating up to 200/200GHz (fT/fMAX frequencies in manufacturing and demonstrated to 270 GHz fT, for reduced noise and integrated RF capabilities which could be used in ROICs. Implementation of these technologies in a thick film SOI process for integrated RF switch and power management and the availability of high fT vertical PNPs to enable complementary BiCMOS (CBiCMOS), for RF enabled ROICs, are also described in this paper.

  7. Scaling and application of commercial, feature-rich, modular mixed-signal technology platforms for large format ROICs

    Science.gov (United States)

    Kar-Roy, Arjun; Racanelli, Marco; Howard, David; Miyagi, Glenn; Bowler, Mark; Jordan, Scott; Zhang, Tao; Krieger, William

    2010-04-01

    Today's modular, mixed-signal CMOS process platforms are excellent choices for manufacturing of highly integrated, large-format read out integrated circuits (ROICs). Platform features, that can be used for both cooled and un-cooled ROIC applications, can include (1) quality passives such as 4fFμm2 stacked MIM capacitors for linearity and higher density capacitance per pixel, 1kOhm high-value poly-silicon resistors, 2.8μm thick metals for efficient power distribution and reduced I-R drop; (2) analog active devices such as low noise single gate 3.3V, and 1.8V/3.3V or 1.8V/5V dual gate configurations, 40V LDMOS FETs, and NPN and PNP devices, deep n-well for substrate isolation for analog blocks and digital logic; (3) tools to assist the circuit designer such as models for cryogenic temperatures, CAD assistance for metal density uniformity determination, statistical, X-sigma and PCM-based models for corner validation and to simulate design sensitivity, and (4) sub-field stitching for large die. The TowerJazz platform of technology for 0.50μm, 0.25μm and 0.18μm CMOS nodes, with features as described above, is described in detail in this paper.

  8. Commercially developed mixed-signal CMOS process features for application in advanced ROICs in 0.18μm technology node

    Science.gov (United States)

    Kar-Roy, Arjun; Hurwitz, Paul; Mann, Richard; Qamar, Yasir; Chaudhry, Samir; Zwingman, Robert; Howard, David; Racanelli, Marco

    2012-06-01

    Increasingly complex specifications for next-generation focal plane arrays (FPAs) require smaller pixels, larger array sizes, reduced power consumption and lower cost. We have previously reported on the favorable features available in the commercially available TowerJazz CA18 0.18μm mixed-signal CMOS technology platform for advanced read-out integrated circuit (ROIC) applications. In his paper, new devices in development for commercial purposes and which may have applications in advanced ROICs are reported. First, results of buried-channel 3.3V field effect transistors (FETs) are detailed. The buried-channel pFETs show flicker (1/f) noise reductions of ~5X in comparison to surface-channel pFETs along with a significant reduction of the body constant parameter. The buried-channel nFETs show ~2X reduction of 1/f noise versus surface-channel nFETs. Additional reduced threshold voltage nFETs and pFETs are also described. Second, a high-density capacitor solution with a four-stacked linear (metal-insulator-metal) MIM capacitor having capacitance density of 8fF/μm2 is reported. Additional stacking with MOS capacitor in a 5V tolerant process results in >50fC/μm2 charge density. Finally, one-time programmable (OTP) and multi-time programmable (MTP) non-volatile memory options in the CA18 technology platform are outlined.

  9. Numerical studies on a plasmonic temperature nanosensor based on a metal-insulator-metal ring resonator structure for optical integrated circuit applications

    Science.gov (United States)

    Al-mahmod, Md. Jubayer; Hyder, Rakib; Islam, Md Zahurul

    2017-07-01

    A nanosensor, based on a metal-insulator-metal (MIM) plasmonic ring resonator, is proposed for potential on-chip temperature sensing and its performance is evaluated numerically. The sensor components can be fabricated by using planar processes on a silicon substrate, making its manufacturing compatible to planar electronic fabrication technology. The sensor, constructed using silver as the metal rings and a thermo-optic liquid ethanol film between the metal layers, is capable of sensing temperature with outstanding optical sensitivity, as high as -0.53 nm/°C. The resonance wavelength is found to be highly sensitive to the refractive index of the liquid dielectric film. The resonance peak can be tuned according to the requirement of intended application by changing the radii of the ring resonator geometries in the design phase. The compact size, planar and silicon-based design, and very high resolutions- these characteristics are expected to make this sensor technology a preferred choice for lab-on-a-chip applications, as compared to other contemporary sensors.

  10. Low Drift Type N Thermocouples for Nuclear Applications

    International Nuclear Information System (INIS)

    Scervini, M.; Rae, C.

    2013-06-01

    Thermocouples are the most commonly used sensors for temperature measurement in nuclear reactors. They are crucial for the control of current nuclear reactors and for the development of GEN IV reactors. In nuclear applications thermocouples are strongly affected by intense neutron fluxes. As a result of the interaction with neutrons, the thermoelements of the thermocouples undergo transmutation, which produces a time dependent change in composition and, as a consequence, a time dependent drift of the thermocouple signal. Thermocouple drift can be very significant for in-pile temperature measurements and may render the temperature sensors unreliable after exposure to nuclear radiation for relatively short times compared to the life required for temperature sensors in nuclear applications. Previous experiences with type K thermocouples in nuclear reactors have shown that they are affected by neutron irradiation only to a limited extent. Similarly type N thermocouples are expected to be only slightly affected by neutron fluxes. Currently the use of Nickel based thermocouples is limited to temperatures lower than 1000 deg. C due to drift related to phenomena other than nuclear irradiation. In this work, undertaken as part of the European project METROFISSION, the drift of type N thermocouples has been investigated in the temperature range 600-1300 deg. C. The approach of this study is based on the attempt to separate the contributions of each thermo-element to drift. In order to identify the dominant thermo-element for drift, the contributions of both positive (NP) and negative (NN) thermo-elements to the total drift of 3.2 mm diameter MIMS thermocouples have been measured in each drift test using a pure Pt thermo-element as a reference. Conventional Inconel-600 sheathed type N thermocouples have been compared with type N thermocouples sheathed in a new alloy. At temperatures higher than 1000 deg. C conventional Inconel600 sheathed type N thermocouples can experience a

  11. Medical Applications

    OpenAIRE

    Biscari, C.; Falbo, L.

    2016-01-01

    The use of accelerators for medical applications has evolved from initial experimentation to turn-key devices commonly operating in hospitals. New applications are continuously being developed around the world, and the hadrontherapy facilities of the newest generation are placed at the frontier between industrial production and advanced R&D. An introduction to the different medical application accelerators is followed by a description of the hadrontherapy facilities, with special emphasis on ...

  12. LCA Applications

    DEFF Research Database (Denmark)

    Owsianiak, Mikołaj; Bjørn, Anders; Laurent, Alexis

    2018-01-01

    The chapter gives examples of applications of LCA by the central societal actors in government, industry and citizens, and discusses major motivations and challenges for the use of LCA to support science-based decision-making from their respective perspectives. We highlight applications of LCA...... environmental impacts of products and systems and support decisions around production and consumption and highlights factors that prevent its even more widespread application....

  13. Multilayer tungsten-alumina-based broadband light absorbers for high-temperature applications

    DEFF Research Database (Denmark)

    Chirumamilla, Manohar; Roberts, Alexander Sylvester; Ding, Fei

    2016-01-01

    Efficient broadband absorption of visible and near-infrared light by low quality-factor metal-insulator-metal (MIM) resonators using refractory materials is reported. Omnidirectional absorption of incident light for broad angles of incidence and polarization insensitivity are observed for the fab...

  14. PSA applications

    Energy Technology Data Exchange (ETDEWEB)

    Dubreuil Chambardel, A

    1997-12-31

    The IAEA now defines three types of PSA applications: Validation of design and of operation procedures; optimization of plant operation; and regulatory applications. The applications of PSA are manifold: only a few are dealt with here (precursor analysis is dealt with in session 3, topic 4). For each of them, we will do the utmost to demonstrate the main difficulties encountered, EDF`s viewpoint on the matter, and the points remaining to be solved. In what follows, unless explicitly stated otherwise, we have made every effort to represent the different applications as they are practiced by all concerned in the international community, and to describe the inherent difficulties the international community has encountered with these applications with all objectivity. It goes without saying that the comments below are simply those of the ESF department, and are submitted here for discussion by the experts. 13 refs.

  15. PSA applications

    International Nuclear Information System (INIS)

    Dubreuil Chambardel, A.

    1996-01-01

    The IAEA now defines three types of PSA applications: Validation of design and of operation procedures; optimization of plant operation; and regulatory applications. The applications of PSA are manifold: only a few are dealt with here (precursor analysis is dealt with in session 3, topic 4). For each of them, we will do the utmost to demonstrate the main difficulties encountered, EDF's viewpoint on the matter, and the points remaining to be solved. In what follows, unless explicitly stated otherwise, we have made every effort to represent the different applications as they are practiced by all concerned in the international community, and to describe the inherent difficulties the international community has encountered with these applications with all objectivity. It goes without saying that the comments below are simply those of the ESF department, and are submitted here for discussion by the experts. 13 refs

  16. Electrical characterization of MIM capacitor comprises an adamantane film at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Tiwari, Rajanish N., E-mail: rajanisht@gmail.com [Department of Physics and Astronomical Sciences, Central University of Himachal Pradesh, Dharmshala 176206 Kangra, H.P. India (India); Toyota Technological Institute, 2-12-1Hisakata, Tempaku-Ku, Nagoya 468-8511 (Japan); Yoshimura, Masamichi [Department of Physics and Astronomical Sciences, Central University of Himachal Pradesh, Dharmshala 176206 Kangra, H.P. India (India)

    2016-06-15

    We fabricated a new metal-insulator-metal capacitor at room temperature, comprising a ∼90 nm thin low–k adamantane film on a Si substrate. The surface morphology of deposited organic film was investigated by using scanning electron microscopy and Raman spectroscopy, which is confirmed that the adamantane thin film was uniformly distributed on the Si surface. The adamantane film exhibits a low leakage current density of 7.4 x 10{sup −7} A/cm{sup 2} at 13.5 V, better capacitance density of 2.14 fF/μm{sup 2} at 100 KHz.

  17. Humidity and polarity influence on MIM PZT capacitor degradation and breakdown

    NARCIS (Netherlands)

    Wang, Jiahui; Salm, Cora; Houwman, Evert; Schmitz, Jurriaan; Nguyen, Minh

    2016-01-01

    This paper presents a reliability study on unpackaged metal-PZT-metal capacitors. Both ramped voltage stress (RVS) and time dependent dielectric breakdown (TDDB) measurements show that environmental humidity dramatically worsens the PZT reliability. Visible breakdown spots on the surface of PZT

  18. Olha pra mim: encontro de gerações intermediado pela escrita de cartas

    OpenAIRE

    Santos, Divina de Fátima dos

    2015-01-01

    Esta tese analisou os benefícios da troca de cartas entre gerações muito distintas, investigando o quanto o ato de escrever sobre acontecimentos da vida cotidiana pode estar associado a uma melhor autopercepção dos participantes do processo. Procurou-se compreender o significado de uma troca de correspondências ocorrida entre crianças e idosos, residentes na cidade de Caraguatatuba, no litoral norte de São Paulo, e os seus efeitos sobre suas subjetividades. O trabalho analisou a participação ...

  19. “Falar de Mim é Fácil, Difícil é Ser Eu"

    Directory of Open Access Journals (Sweden)

    Érica Alessandra F. Aniceto

    2016-07-01

    Full Text Available No presente artigo, pretende-se verificar como alunos da Educação de Jovens e Adultos (EJA de uma escola localizada na periferia de Mariana – MG constroem sua identidade no site de relacionamentos Orkut. Na referida rede de relacionamentos, as relações cotidianas se mostram através da exposição do sujeito em variados níveis de visibilidade, em que as pessoas se revelam de acordo com a maneira que gostariam de ser vistas e respeitadas pela sociedade, buscando sua própria identidade nesse contexto virtual. Nessa construção intencional da identidade, permitida no mundo da Internet, o sujeito tem autonomia para elaborar e construir sua identidade da maneira que lhe convém. Lembrando que a linguagem não pode dissociar-se do contexto social em que funciona, pode-se afirmar que, com a intenção de interagir com a comunidade em que vivem, na tentativa de mostrar-se como parte dela, os referidos alunos de EJA apresentam nesse cenário virtual uma determinada identidade de grupo. Ao observar os perfis de três estudantes, concluímos, baseados na teoria interacionista de Goffman (2008, que, no momento em que o sujeito se apresenta diante dos outros, ele constrói a sua identidade de acordo com os valores reconhecidos e legitimados por determinada comunidade, numa tentativa de ser aceito por ela.

  20. Gene localisation for Sutherland-Haan syndrome (SHS:MIM 309470)

    Energy Technology Data Exchange (ETDEWEB)

    Gedeon, A.; Mulley, J.; Haan, E.

    1996-07-12

    The syndrome of X-linked mental retardation (borderline/mild/moderate in affected men), short stature, microcephaly, brachycephaly, small testes and spastic diplegia was characterized and tentatively mapped to the pericentromeric region from a single family. The lod score of 1.61 at recombination fraction 0.13 for the marker DXYS1 (Xq21.3) was increased to 2.10 by inclusion of a boy tentatively assessed as affected. The few informative RFLP markers available at that time all showed recombination; thus, a regional localization could not be determined. No other families with this disorder have been reported. 5 refs., 1 tab.

  1. Dielectric material options for integrated capacitors

    NARCIS (Netherlands)

    Ruhl, G.; Lehnert, W.; Lukosius, M.; Wenger, C.; Baristiran Kaynak, C.; Blomberg, T.; Haukka, S.; Baumann, P.K.; Besling, W.F.A.; Roest, A.L.; Riou, B.; Lhostis, S.; Halimaou, A.; Roozeboom, F.; Langereis, E.; Kessels, W.M.M.; Zauner, A.; Rushworth, S.A.

    2014-01-01

    Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor

  2. Plasmonic Devices for Near and Far-Field Applications

    KAUST Repository

    Alrasheed, Salma

    2017-11-30

    Plasmonics is an important branch of nanophotonics and is the study of the interaction of electromagnetic fields with the free electrons in a metal at metallic/dielectric interfaces or in small metallic nanostructures. The electric component of an exciting electromagnetic field can induce collective electron oscillations known as surface plasmons. Such oscillations lead to the localization of the fields that can be at sub-wavelength scale and to its significant enhancement relative to the excitation fields. These two characteristics of localization and enhancement are the main components that allow for the guiding and manipulation of light beyond the diffraction limit. This thesis focuses on developing plasmonic devices for near and far-field applications. In the first part of the thesis, we demonstrate the detection of single point mutation in peptides from multicomponent mixtures for early breast cancer detection using selfsimilar chain (SCC) plasmonic devices that show high field enhancement and localization. In the second part of this work, we investigate the anomalous reflection of light for TM polarization for normal and oblique incidence in the visible regime. We propose gradient phase gap surface plasmon (GSP) metasurfaces that exhibit high conversion efficiency (up to ∼97% of total reflected light) to the anomalous reflection angle for blue, green and red wavelengths at normal and oblique incidence. In the third part of the thesis, we present a theoretical approach to narrow the plasmon linewidth and enhance the near-field intensity at a plasmonic dimer gap (hot spot) through coupling the electric localized surface plasmon (LSP) resonance of a silver hemispherical dimer with the resonant modes of a Fabry-Perot (FP) cavity. In the fourth part of this work, we demonstrate numerically bright color pixels that are highly polarized and broadly tuned using periodic arrays of metal nanosphere dimers on a glass substrate. In the fifth and final part of the

  3. Medical Applications

    CERN Document Server

    Biscari, C.

    2014-12-19

    The use of accelerators for medical applications has evolved from initial experimentation to turn-key devices commonly operating in hospitals. New applications are continuously being developed around the world, and the hadrontherapy facilities of the newest generation are placed at the frontier between industrial production and advanced R&D. An introduction to the different medical application accelerators is followed by a description of the hadrontherapy facilities, with special emphasis on CNAO, and the report closes with a brief outlook on the future of this field.

  4. Medical Applications

    International Nuclear Information System (INIS)

    Biscari, C; Falbo, L

    2014-01-01

    The use of accelerators for medical applications has evolved from initial experimentation to turn-key devices commonly operating in hospitals. New applications are continuously being developed around the world, and the hadrontherapy facilities of the newest generation are placed at the frontier between industrial production and advanced R&D. An introduction to the different medical application accelerators is followed by a description of the hadrontherapy facilities, with special emphasis on CNAO, and the report closes with a brief outlook on the future of this field

  5. Superconductivity - applications

    International Nuclear Information System (INIS)

    The paper deals with the following subjects: 1) Electronics and high-frequency technology, 2) Superconductors for energy technology, 3) Superconducting magnets and their applications, 4) Electric machinery, 5) Superconducting cables. (WBU) [de

  6. Photovoltaic applications

    International Nuclear Information System (INIS)

    Sidrach, M.

    1992-01-01

    The most common terrestrial applications of photovoltaic plants are reviewed. Classification of applications can be done considering end-use sectors and load profiles (consumption demand). For those systems with direct coupling the working point is determined by the intersection of the load line with the I-V curve Design guidelines are provided for photovoltaic systems. This lecture focusses on the distribution system and safeguards

  7. Double salts of ionic-liquid-based surfactants in microextraction: application of their mixed hemimicelles as novel sorbents in magnetic-assisted micro-dispersive solid-phase extraction for the determination of phenols.

    Science.gov (United States)

    Trujillo-Rodríguez, María J; Pino, Verónica; Anderson, Jared L; Ayala, Juan H; Afonso, Ana M

    2015-11-01

    The use of mixed hemimicelles of ionic liquid (IL)-based surfactants in a magnetic-based micro-dispersive solid-phase extraction (m-μdSPE) approach is described. Not only is the symmetric monocationic IL-based surfactant 1,3-didodecylimidazolium bromide (C12C12Im-Br) studied for first time in m-μdSPE, but double-salt (DS) IL (DSIL)-based surfactants are also examined. Nine DSIL-based surfactants were formed by combination of C12C12Im-Br with other IL-based surfactants, including nonsymmetric monocationic and dicationic ILs combined at three different molar fractions. The analytical application was focused on the determination of a group of eight phenols, including bisphenol A, in water samples. The best results were obtained with the DSIL formed by C12C12Im-Br (molar fraction 0.5) and 1-hexadecyl-3-methylimidazolium bromide (C16MIm-Br), after proper optimization of the overall method in combination with high-performance liquid chromatography (HPLC) and diode-array detection (DAD). The optimum conditions for 100 mL of water samples require a small amount (10 mg) of Fe3O4 magnetic nanoparticles, a low content (5.0 mg of C12C12Im-Br and 3.9 mg of C16MIm-Br) of the selected DSIL, pH 11, a sonication time of 2.5 min, and an equilibration time of 5 min with the aid of NdFeB magnets, followed by elution of phenols, evaporation, and reconstitution with 0.5 mL of acetonitrile. The overall m-μdSPE-HPLC-DAD method is characterized for limits of detection down to 1.3 μg · L(-1), intraday relative standard deviations lower than 13 % (n = 3), and interday relative standard deviations lower than 17 % (n = 9), with a spiking level of 15 μg · L(-1); with enrichment factors between 15.7 and 141, and average relative recoveries of 99.9 %.

  8. PRIBIC Application

    International Nuclear Information System (INIS)

    Pascual Alonso, J.L.; Barcala Riveira, J.M.

    2002-01-01

    PRIBIC plant (Pollutants Reduction In small Biomass Combustion systems) at CEDER is a facility specifically designed to do biomass combustion tests. In these tests is necessary to know the values of different sensors in real time. With this information the PRIBIC plant is regulated to its optimum point of work and its possible to follow the operation criteria and get test objectives. Different electronic instruments record information about the plant operation. A software application was developed to let a centralised motorization of that information. The application communicates with the instrumentation, recovers data, lets operators see data in real time and saves the information in files. An important part of this document describes that application, and some considerations to generalise this kind of developments to other Experimental Plants, including cost estimations. Descriptions of plant, analysis of the problem, result evaluations, and conclusions can also be found in the document. (Author) 13 refs

  9. Other applications

    International Nuclear Information System (INIS)

    Ligou, J.; Benoist, P.; Boffi, V.; Stenic, B.

    1981-01-01

    This chapter reports about the work done by four groups in Italy, France, Switzerland and Yugoslavia on the new applications of transport theory. Among them problems dealing with controlled thermonuclear reactions and/or fusion devices, nonlinear electric conductivity, atomic and crystal models were discussed

  10. Spacer engineered Trigate SOI TFET: An investigation towards harsh temperature environment applications

    Science.gov (United States)

    Mallikarjunarao; Ranjan, Rajeev; Pradhan, K. P.; Artola, L.; Sahu, P. K.

    2016-09-01

    In this paper, a novel N-channel Tunnel Field Effect Transistor (TFET) i.e., Trigate Silicon-ON-Insulator (SOI) N-TFET with high-k spacer is proposed for better Sub-threshold swing (SS) and OFF-state current (IOFF) by keeping in mind the sensitivity towards temperature. The proposed model can achieve a Sub-threshold swing less than 35 mV/decade at various temperatures, which is desirable for designing low power CTFET for digital circuit applications. In N-TFET source doping has a significant effect on the ON-state current (ION) level; therefore more electrons will tunnel from source to channel region. High-k Spacer i.e., HfO2 is used to enhance the device performance and also it avoids overlapping of transistors in an integrated circuits (IC's). We have designed a reliable device by performing the temperature analysis on Transfer characteristics, Drain characteristics and also on various performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF, Trans-conductance (gm), Trans-conductance Generation Factor (TGF), Sub-threshold Swing (SS) to observe the applications towards harsh temperature environment.

  11. A comparative study of charge trapping in HfO{sub 2}/Al{sub 2}O{sub 3} and ZrO{sub 2}/Al{sub 2}O{sub 3} based multilayered metal/high-k/oxide/Si structures

    Energy Technology Data Exchange (ETDEWEB)

    Spassov, D., E-mail: d_spassov@abv.bg [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Skeparovski, A. [Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje (Macedonia, The Former Yugoslav Republic of); Paskaleva, A. [Institute of Solid State Physics, Bulgarian Academy of Sciences, Tzarigradsko Chaussee 72, Sofia 1784 (Bulgaria); Novkovski, N. [Institute of Physics, Faculty of Natural Sciences and Mathematics, University “Ss. Cyril and Methodius”, Arhimedova 3, 1000 Skopje (Macedonia, The Former Yugoslav Republic of)

    2016-09-01

    The electrical properties of multilayered HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2}/SiO{sub 2} and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2}/SiO{sub 2} metal-oxide semiconductor capacitors were investigated in order to evaluate the possibility of their application in charge-trapping non-volatile memory devices. The stacks were deposited by reactive radiofrequency magnetron sputtering on Si substrates with thermal SiO{sub 2} with a thickness ranging from 2 to 5 nm. Both types of stacks show negative initial oxide charge and its density is higher for HfO{sub 2}-based structures. Memory window up to 6V at sweeping voltage range of ± 16V was obtained for HfO{sub 2}-based stacks. The hysteresis in these structures is mainly due to a trapping of electrons injected from the Si substrate. The charge-trapping properties of ZrO{sub 2}-based samples are compromised by the high leakage currents and the dielectric breakdown. The conduction through the capacitors at low applied voltages results from hopping of thermally excited electrons from one isolated state to another. The energy depth of the traps participating in the hopping conduction was determined as ~ 0.7 eV for the HfO{sub 2}-based layers and ~ 0.6 eV for ZrO{sub 2}-based ones, originating from negatively charged oxygen vacancies. At high electric fields, the current voltage characteristics were interpreted in terms of space charge limited currents, Fowler–Nordheim tunneling, Schottky emission, and Poole–Frenkel mechanism. The charge retention characteristics do not depend on the thickness of the tunnel SiO{sub 2}. - Highlights: • Sputtered HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2} and ZrO{sub 2}/Al{sub 2}O{sub 3}/ZrO{sub 2} charge-trapping layers were studied. • HfO{sub 2}/Al{sub 2}O{sub 3}/HfO{sub 2} stacks show memory window up to 6 V and good retention times. • Negatively charged oxygen vacancies were identified as main defects in the stacks. • Electrical breakdown compromise the charge-trapping properties

  12. Application note :

    Energy Technology Data Exchange (ETDEWEB)

    Russo, Thomas V.

    2013-08-01

    The development of the XyceTM Parallel Electronic Simulator has focused entirely on the creation of a fast, scalable simulation tool, and has not included any schematic capture or data visualization tools. This application note will describe how to use the open source schematic capture tool gschem and its associated netlist creation tool gnetlist to create basic circuit designs for Xyce, and how to access advanced features of Xyce that are not directly supported by either gschem or gnetlist.

  13. Photography applications

    Science.gov (United States)

    Cochran, Susan A.; Goodman, James A.; Purkis, Samuel J.; Phinn, Stuart R.

    2013-01-01

    Photographic imaging is the oldest form of remote sensing used in coral reef studies. This chapter briefly explores the history of photography from the 1850s to the present, and delves into its application for coral reef research. The investigation focuses on both photographs collected from low-altitude fixed-wing and rotary aircraft, and those collected from space by astronauts. Different types of classification and analysis techniques are discussed, and several case studies are presented as examples of the broad use of photographs as a tool in coral reef research.

  14. Detector applications

    International Nuclear Information System (INIS)

    Pehl, R.H.

    1977-10-01

    Semiconductor detectors are now applied to a very wide range of problems. The combination of relatively low cost, excellent energy resolution, and simultaneous broad energy-spectrum analysis is uniquely suited to many applications in both basic and applied physics. Alternative techniques, such as magnetic spectrometers for charged-particle spectroscopy, while offering better energy resolution, are bulky, expensive, and usually far more difficult to use. Furthermore, they do not directly provide the broad energy-spectrum measurements easily accomplished using semiconductor detectors. Scintillation detectors, which are approximately equivalent to semiconductor detectors in convenience and cost, exhibit 10 to 100 times worse energy resolution. However, their high efficiency and large potential size recommend their use in some measurements

  15. Connected vehicle applications : environment.

    Science.gov (United States)

    2016-01-01

    The U.S. Department of Transportation has developed a number of connected vehicle environmental applications, including the Applications for the Environment Real-Time Information Synthesis (AERIS) research program applications and road weather applic...

  16. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, J.-C.; Kesler, V. G.

    2009-02-01

    The electronic structure of binary titanate La2Ti2O7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La2Ti2O7 are determined as αTi = 872.4 and αO = 1042.3 eV. Chemical bonding effects have been discussed with binding energy (BE) differences ΔTi = (BE O 1s - BE Ti 2p3/2) = 71.6 eV and ΔLa = (BE La 3d5/2 - BE O 1s) = 304.7 eV as key parameters in comparison with those in several titanium- and lanthanum-bearing oxides.

  17. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    International Nuclear Information System (INIS)

    Atuchin, V V; Gavrilova, T A; Grivel, J-C; Kesler, V G

    2009-01-01

    The electronic structure of binary titanate La 2 Ti 2 O 7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La 2 Ti 2 O 7 are determined as α Ti = 872.4 and α O = 1042.3 eV. Chemical bonding effects have been discussed with binding energy (BE) differences Δ Ti = (BE O 1s - BE Ti 2p 3/2 ) = 71.6 eV and Δ La = (BE La 3d 5/2 - BE O 1s) = 304.7 eV as key parameters in comparison with those in several titanium- and lanthanum-bearing oxides.

  18. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    International Nuclear Information System (INIS)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, J.-C.; Kesler, V.G.; Troitskaia, I.B.

    2012-01-01

    The spectroscopic parameters and electronic structure of binary titanate Pr 2 Ti 2 O 7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Pr 2 Ti 2 O 7 have been determined as α Ti =872.8 and α O =1042.3 eV. Variations of cation–anion bond ionicity have been discussed using binding energy differences Δ Ti =(BE O 1s–BE Ti 2p 3/2 )=71.6 eV and Δ Pr =BE(Pr 3d 5/2 )−BE(O 1s)=403.8 eV as key parameters in comparison with those of other titanium- and praseodymium-bearing oxides. Highlights: ► Solid state synthesis of polar titanate Pr 2 Ti 2 O 7 . ► Structural and spectroscopic properties and electronic structure determination. ► Ti–O and Pr–O bonding analysis using Ti 2p 3/2 , Pr 3d 5/2 and O 1s core levels.

  19. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    Science.gov (United States)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, J.-C.; Kesler, V. G.; Troitskaia, I. B.

    2012-11-01

    The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in Pr2Ti2O7 have been determined as αTi=872.8 and αO=1042.3 eV. Variations of cation-anion bond ionicity have been discussed using binding energy differences ΔTi=(BE O 1s-BE Ti 2p3/2)=71.6 eV and ΔPr=BE(Pr 3d5/2)-BE(O 1s)=403.8 eV as key parameters in comparison with those of other titanium- and praseodymium-bearing oxides.

  20. Understanding the Structure of High-K Gate Oxides - Oral Presentation

    Energy Technology Data Exchange (ETDEWEB)

    Miranda, Andre [SLAC National Accelerator Lab., Menlo Park, CA (United States)

    2015-08-25

    Hafnium Oxide (HfO2) amorphous thin films are being used as gate oxides in transistors because of their high dielectric constant (κ) over Silicon Dioxide. The present study looks to find the atomic structure of HfO2 thin films which hasn’t been done with the technique of this study. In this study, two HfO2 samples were studied. One sample was made with thermal atomic layer deposition (ALD) on top of a Chromium and Gold layer on a silicon wafer. The second sample was made with plasma ALD on top of a Chromium and Gold layer on a Silicon wafer. Both films were deposited at a thickness of 50nm. To obtain atomic structure information, Grazing Incidence X-ray diffraction (GIXRD) was carried out on the HfO2 samples. Because of this, absorption, footprint, polarization, and dead time corrections were applied to the scattering intensity data collected. The scattering curves displayed a difference in structure between the ALD processes. The plasma ALD sample showed the broad peak characteristic of an amorphous structure whereas the thermal ALD sample showed an amorphous structure with characteristics of crystalline materials. This appears to suggest that the thermal process results in a mostly amorphous material with crystallites within. Further, the scattering intensity data was used to calculate a pair distribution function (PDF) to show more atomic structure. The PDF showed atom distances in the plasma ALD sample had structure up to 10 Å, while the thermal ALD sample showed the same structure below 10 Å. This structure that shows up below 10 Å matches the bond distances of HfO2 published in literature. The PDF for the thermal ALD sample also showed peaks up to 20 Å, suggesting repeating atomic spacing outside the HfO2 molecule in the sample. This appears to suggest that there is some crystalline structure within the thermal ALD sample.

  1. Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

    Science.gov (United States)

    Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

    2018-05-01

    Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

  2. Electronic structure of layered ferroelectric high-k titanate La2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V. V.; Gavrilova, T. A.; Grivel, Jean-Claude

    2009-01-01

    The electronic structure of binary titanate La2Ti2O7 has been studied by x-ray photoelectron spectroscopy. Spectral features of valence band and all constituent element core levels have been considered. The Auger parameters of titanium and oxygen in La2Ti2O7 are determined as alpha(Ti) = 872...

  3. Electronic structure of layered ferroelectric high-k titanate Pr2Ti2O7

    DEFF Research Database (Denmark)

    Atuchin, V.V.; Gavrilova, T.A.; Grivel, Jean-Claude

    2012-01-01

    The spectroscopic parameters and electronic structure of binary titanate Pr2Ti2O7 have been studied by IR-, Raman and X-ray photoelectron spectroscopy (XPS) for the powder sample prepared by solid state synthesis. The spectral features of valence band and all constituent element core levels have...

  4. Magnetic dipole moments of High-K isomeric states in Hf isotopes

    CERN Multimedia

    Walters, W; Nishimura, K; Bingham, C R

    2007-01-01

    It is proposed to make precision measurements of the magnetic moments of 5 multi-quasi-particle K-isomers in Hf nuclei by the Nuclear Magnetic Resonance of Oriented Nuclei (NMR/ON) technique using the NICOLE on-line nuclear orientation facility and exploiting the unique HfF$_{3}$ beams recently available at ISOLDE. Results will be used to extract single-particle and collective g-factors of the isomeric states and their excitations and to shed new light on their structure.

  5. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

    2013-01-01

    (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree

  6. Nitride passivation of the interface between high-k dielectrics and SiGe

    Energy Technology Data Exchange (ETDEWEB)

    Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

    2016-01-04

    In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

  7. Strain relaxation near high-k/Si interface by post-deposition annealing

    International Nuclear Information System (INIS)

    Emoto, T.; Akimoto, K.; Yoshida, Y.; Ichimiya, A.; Nabatame, T.; Toriumi, A.

    2005-01-01

    We studied the effect of post-deposition annealing on a HfO 2 /Si interface of by extremely asymmetric X-ray diffraction. Comparing the rocking curves before annealing the sample with those of the annealed sample, it is found that an interfacial layer with a density of 3 g/cm 3 grows at the interface between the HfO 2 layer and the substrate during post-deposition annealing. The wavelength dependency of the integrated intensities of the rocking curve for the as-deposited sample fluctuated with the observation position. This fluctuation was suppressed by annealing. From these results we concluded that the strain introduced into the substrate becomes homogeneous by annealing. Moreover, a quantitative estimation of the strain by curve fitting reveals the existence of compressive strain under the HfO 2 layer

  8. Coexisting shape- and high-K isomers in the shape transitional nucleus {sup 188}Pt

    Energy Technology Data Exchange (ETDEWEB)

    Mukhopadhyay, S., E-mail: somm@barc.gov.in [Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Biswas, D.C. [Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Tandel, S.K. [UM-DAE Centre for Excellence in Basic Sciences, Mumbai 400098 (India); Danu, L.S.; Joshi, B.N.; Prajapati, G.K. [Nuclear Physics Division, Bhabha Atomic Research Centre, Trombay, Mumbai 400085 (India); Nag, Somnath [Dept. of Physics, IIT Kharagpur, Kharagpur 721302 (India); Trivedi, T.; Saha, S.; Sethi, J.; Palit, R. [Dept. of Nuclear and Atomic Physics, TIFR, Mumbai 400005 (India); Joshi, P.K. [Homi Bhabha Centre for Science Education, TIFR, Mumbai 400088 (India)

    2014-12-12

    A high-spin study of the shape transitional nucleus {sup 188}Pt reveals the unusual coexistence of both shape- and K-isomeric states. Reduced B(E2) transition probabilities for decays from these states inferred from the data clearly establish their hindered character. In addition to other excited structures, a rotational band built upon the K isomer is identified, and its configuration has been assigned through an analysis of alignments and branching ratios. The shape evolution with spin in this nucleus has been inferred from both experimental observables and cranking calculations. The yrast positive parity structure appears to evolve from a near-prolate deformed shape through triaxial at intermediate excitation, and eventually to oblate at the highest spins.

  9. Coexisting shape- and high-K isomers in the shape transitional nucleus 188Pt

    Science.gov (United States)

    Mukhopadhyay, S.; Biswas, D. C.; Tandel, S. K.; Danu, L. S.; Joshi, B. N.; Prajapati, G. K.; Nag, Somnath; Trivedi, T.; Saha, S.; Sethi, J.; Palit, R.; Joshi, P. K.

    2014-12-01

    A high-spin study of the shape transitional nucleus 188Pt reveals the unusual coexistence of both shape- and K-isomeric states. Reduced B (E2) transition probabilities for decays from these states inferred from the data clearly establish their hindered character. In addition to other excited structures, a rotational band built upon the K isomer is identified, and its configuration has been assigned through an analysis of alignments and branching ratios. The shape evolution with spin in this nucleus has been inferred from both experimental observables and cranking calculations. The yrast positive parity structure appears to evolve from a near-prolate deformed shape through triaxial at intermediate excitation, and eventually to oblate at the highest spins.

  10. High-K isomers in {sup 176}W and mechanisms of K-violation

    Energy Technology Data Exchange (ETDEWEB)

    Crowell, B.; Janssens, R.V.F.; Blumenthal, D.J. [and others

    1995-08-01

    K-isomers are states in deformed nuclei whose {gamma}-decay is hindered by selection rules involving K, the projection of the angular momentum along the axis of symmetry of the nucleus. Previous work with the Argonne Notre Dame BGO Array delineated the existence of two K-isomers in {sup 176}W, one of which had a very unusual pattern of decay. A short description of this work was published as a letter, and a more complete account is being readied for submission. These results provided evidence that quantum-mechanical fluctuations in the nuclear shape may be responsible for some of the observed K-violating transitions. In addition, hints were present in the data of the existence of another K-isomer with an even higher in. An experiment was performed in September 1994 to observe this isomer, using the reaction {sup 50}Ti({sup 130}Te,4n), and a technique in which recoiling {sup 176}W nuclei were created 17-cm upstream of the center of the array and caught on a Pb catcher foil at the center. Intense ({approximately} 3 pnA) beams of {sup 130}Te were supplied by the ECR source using a new sputtering technique. The recoil-shadow geometry was highly successful at removing the background from non-isomeric decays, allowing the weakly populated K-isomers to be detected cleanly. In addition, the availability of pulsed beams from ATLAS and the timing data from the BGO array provided a second technique for isolating the decays of interest, by selecting events in which a given number of BGO detectors fired between beam pulses. This method was used in the previous experiment, and was also applied in this experiment as a second level of selection. As a result, gamma-ray transitions were detected in the present experiment with intensities as small as {approximately} 0.02 % of the {sup 176}W reaction channel. The existence of the new isomer was confirmed, and a partial level-scheme was constructed.

  11. Pentacene-Based Thin Film Transistor with Inkjet-Printed Nanocomposite High-K Dielectrics

    Directory of Open Access Journals (Sweden)

    Chao-Te Liu

    2012-01-01

    Full Text Available The nanocomposite gate insulating film of a pentacene-based thin film transistor was deposited by inkjet printing. In this study, utilizing the pearl miller to crumble the agglomerations and the dispersant to well stabilize the dispersion of nano-TiO2 particles in the polymer matrix of the ink increases the dose concentration for pico-jetting, which could be as the gate dielectric film made by inkjet printing without the photography process. Finally, we realized top contact pentacene-TFTs and successfully accomplished the purpose of directly patternability and increase the performance of the device based on the nanocomposite by inkjet printing. These devices exhibited p-channel TFT characteristics with a high field-effect mobility (a saturation mobility of ̃0.58 cm2 V−1 s−1, a large current ratio (>103 and a low operation voltage (<6 V. Furthermore, we accorded the deposited mechanisms which caused the interface difference between of inkjet printing and spin coating. And we used XRD, SEM, Raman spectroscopy to help us analyze the transfer characteristics of pentacene films and the performance of OTFTs.

  12. Teleneurology applications

    Science.gov (United States)

    Wechsler, Lawrence R.; Tsao, Jack W.; Levine, Steven R.; Swain-Eng, Rebecca J.; Adams, Robert J.; Demaerschalk, Bart M.; Hess, David C.; Moro, Elena; Schwamm, Lee H.; Steffensen, Steve; Stern, Barney J.; Zuckerman, Steven J.; Bhattacharya, Pratik; Davis, Larry E.; Yurkiewicz, Ilana R.; Alphonso, Aimee L.

    2013-01-01

    Objective: To review current literature on neurology telemedicine and to discuss its application to patient care, neurology practice, military medicine, and current federal policy. Methods: Review of practice models and published literature on primary studies of the efficacy of neurology telemedicine. Results: Teleneurology is of greatest benefit to populations with restricted access to general and subspecialty neurologic care in rural areas, those with limited mobility, and those deployed by the military. Through the use of real-time audio-visual interaction, imaging, and store-and-forward systems, a greater proportion of neurologists are able to meet the demand for specialty care in underserved communities, decrease the response time for acute stroke assessment, and expand the collaboration between primary care physicians, neurologists, and other disciplines. The American Stroke Association has developed a defined policy on teleneurology, and the American Academy of Neurology and federal health care policy are beginning to follow suit. Conclusions: Teleneurology is an effective tool for the rapid evaluation of patients in remote locations requiring neurologic care. These underserved locations include geographically isolated rural areas as well as urban cores with insufficient available neurology specialists. With this technology, neurologists will be better able to meet the burgeoning demand for access to neurologic care in an era of declining availability. An increase in physician awareness and support at the federal and state level is necessary to facilitate expansion of telemedicine into further areas of neurology. PMID:23400317

  13. A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconium-di-Oxide Dielectrics

    Directory of Open Access Journals (Sweden)

    D.Nirmal

    2014-07-01

    Full Text Available In the past, most of the research and development efforts in the area of CMOS and IC’s are oriented towards reducing the power and increasing the gain of the circuits. While focusing the attention on low power and high gain in the device, the materials of the device also been taken into consideration. In the present technology, Computationally intensive devices with low power dissipation and high gain are becoming a critical application domain. Several factors have contributed to this paradigm shift. The primary driving factor being the increase in scale of integration, the chip has to accommodate smaller and faster transistors than their predecessors. During the last decade semiconductor technology has been led by conventional scaling. Scaling, has been aimed towards higher speed, lower power and higher density of the semiconductor devices. However, as scaling approached its physical limits, it has become more difficult and challenging for fabrication industry. Therefore, tremendous research has been carried out to investigate the alternatives, and this led to the introduction of new Nano materials and concepts to overcome the difficulties in the device fabrications. In order to reduce the leakage current and parasitic capacitance in devices, gate oxide high-k dielectric materials are explored. Among the different high-k materials available the nano size Zirconium dioxide material is suggested as an alternate gate oxide material for devices due to its thermal stability and small grain size of material. To meet the requirements of ITRS roadmap 2012, the Multi gate devices are considered to be one of the most promising technologies for the future microelectronics industry due to its excellent immunity to short channel effects and high value of On current. The double gate or multi gate devices provide a better scalability option due to its excellent immunity to short-channel effects. Here the different high-k materials are replaced in different

  14. Nanoantenna couplers for metal-insulator-metal waveguide interconnects

    Science.gov (United States)

    Onbasli, M. Cengiz; Okyay, Ali K.

    2010-08-01

    State-of-the-art copper interconnects suffer from increasing spatial power dissipation due to chip downscaling and RC delays reducing operation bandwidth. Wide bandwidth, minimized Ohmic loss, deep sub-wavelength confinement and high integration density are key features that make metal-insulator-metal waveguides (MIM) utilizing plasmonic modes attractive for applications in on-chip optical signal processing. Size-mismatch between two fundamental components (micron-size fibers and a few hundred nanometers wide waveguides) demands compact coupling methods for implementation of large scale on-chip optoelectronic device integration. Existing solutions use waveguide tapering, which requires more than 4λ-long taper distances. We demonstrate that nanoantennas can be integrated with MIM for enhancing coupling into MIM plasmonic modes. Two-dimensional finite-difference time domain simulations of antennawaveguide structures for TE and TM incident plane waves ranging from λ = 1300 to 1600 nm were done. The same MIM (100-nm-wide Ag/100-nm-wide SiO2/100-nm-wide Ag) was used for each case, while antenna dimensions were systematically varied. For nanoantennas disconnected from the MIM; field is strongly confined inside MIM-antenna gap region due to Fabry-Perot resonances. Major fraction of incident energy was not transferred into plasmonic modes. When the nanoantennas are connected to the MIM, stronger coupling is observed and E-field intensity at outer end of core is enhanced more than 70 times.

  15. Learning Android application testing

    CERN Document Server

    Blundell, Paul

    2015-01-01

    If you are an Android developer looking to test your applications or optimize your application development process, then this book is for you. No previous experience in application testing is required.

  16. Promise Zones for Applicants

    Data.gov (United States)

    Department of Housing and Urban Development — This tool assists applicants to HUD's Promise Zone initiative prepare data to submit with their application by allowing applicants to draw the exact location of the...

  17. High performance solution processed zirconium oxide gate dielectric appropriate for low temperature device application

    Energy Technology Data Exchange (ETDEWEB)

    Hasan, Musarrat; Nguyen, Manh-Cuong; Kim, Hyojin; You, Seung-Won; Jeon, Yoon-Seok; Tong, Duc-Tai; Lee, Dong-Hwi; Jeong, Jae Kyeong; Choi, Rino, E-mail: rino.choi@inha.ac.kr

    2015-08-31

    This paper reports a solution processed electrical device with zirconium oxide gate dielectric that was fabricated at a low enough temperature appropriate for flexible electronics. Both inorganic dielectric and channel materials were synthesized in the same organic solvent. The dielectric constant achieved was 13 at 250 °C with a reasonably low leakage current. The bottom gate transistor devices showed the highest mobility of 75 cm{sup 2}/V s. The device is operated at low voltage with high-k dielectric with excellent transconductance and low threshold voltage. Overall, the results highlight the potential of low temperature solution based deposition in fabricating more complicated circuits for a range of applications. - Highlights: • We develop a low temperature inorganic dielectric deposition process. • We fabricate oxide semiconductor channel devices using all-solution processes. • Same solvent is used for dielectric and oxide semiconductor deposition.

  18. MoO3 trapping layers with CF4 plasma treatment in flash memory applications

    International Nuclear Information System (INIS)

    Kao, Chuyan Haur; Chen, Hsiang; Chen, Su-Zhien; Chen, Chian Yu; Lo, Kuang-Yu; Lin, Chun Han

    2014-01-01

    Highlights: • MoO 3 -based flash memories have been fabricated. • CF4 plasma treatment could enhance good memory performance. • Material analyses confirm that plasma treatment eliminated defects. • Fluorine atoms might fix the dangling bonds. - Abstract: In this research, we used MoO 3 with CF 4 plasma treatment as charge trapping layer in metal-oxide-high-k -oxide-Si-type memory. We analyzed material properties and electrical characteristics with multiple analyses. The plasma treatment could increase the trapping density, reduce the leakage current, expand band gap, and passivate the defect to enhance the memory performance. The MoO 3 charge trapping layer memory with suitable CF 4 plasma treatment is promising for future nonvolatile memory applications

  19. Credential Application Awaiting Information

    Data.gov (United States)

    Department of Homeland Security — When a Credential application or required documentation is incomplete, an Awaiting Information letter is issued. The application process cannot continue until all...

  20. Sight Application Analysis Tool

    Energy Technology Data Exchange (ETDEWEB)

    Bronevetsky, G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-09-17

    The scale and complexity of scientific applications makes it very difficult to optimize, debug and extend them to support new capabilities. We have developed a tool that supports developers’ efforts to understand the logical flow of their applications and interactions between application components and hardware in a way that scales with application complexity and parallelism.

  1. Microwave power engineering applications

    CERN Document Server

    Okress, Ernest C

    2013-01-01

    Microwave Power Engineering, Volume 2: Applications introduces the electronics technology of microwave power and its applications. This technology emphasizes microwave electronics for direct power utilization and transmission purposes. This volume presents the accomplishments with respect to components, systems, and applications and their prevailing limitations in the light of knowledge of the microwave power technology. The applications discussed include the microwave heating and other processes of materials, which utilize the magnetron predominantly. Other applications include microwave ioni

  2. Wapice News Mobile Application

    OpenAIRE

    Söylemez, Ilke

    2017-01-01

    Since the mobile phones started to have an increasingly significant role in daily life, the mobile application development also started to be an important area in the software industry. The problem for mobile application developers is to develop a mobile application which supports all the devices and platforms on the market. This issue created a need for cross platform mobile applications. The cross platform mobile development refers to the development of mobile applications that could be use...

  3. IbM PENGEMBANGAN KEPROFESIAN BERKELANJUTAN (PKB GURU-GURU MIM WILAYAH NGAWEN DAN KLATEN UTARA BERBASIS KURIKULUM 2013

    Directory of Open Access Journals (Sweden)

    Laili Etika Rahmawati

    2015-09-01

    Full Text Available The society service has aimed at accompanying the teachers on understanding and conducting the program of sustainable professionalism development (PKB based on curriculum 2013. When the society service program has finished conducted, it is expected to acquire the four goals as follow: (1 the emergence of a professional teacher group and acquire the teaching competence by implementing the active learning strategy with scientific approach based on curriculum 2013; (2 the learning devices based on curriculum 2013; (3 the research proposal is classroom action research; and (4 the scientific publication article. The method applied in the society service program was conducted with the same model as the PLPG program conducted but the program implementation was simpler or could be called as mini PLPG. The program activity was beginned by deepening of material activity which related to the concept of PKB and the concept of curriculum 2013. The concept of PKB emphasized on three points that should be developed by the teachers, they were the self development, scientific publication, and innovative work. The concept of curriculum 2013 has priority on the changing understanding of the paradigm and the basic concept of curriculum structure, the prominent were about the core and the basic competences. After the deepening materials which conducted in the first phase has finished, the activity then continued by the workshop of the learning devices which emphasized on the concept of scientific approach, the active learning, and the authentic assessment which followed by peer teaching activity. The worshop activity of learning devices was conducted by facilitating the teachers in arranging the learning scenario based on the materials determined. The peer teaching activity was conducted by divide the participants into some groups to conduct the teaching practice by turns and apply the scientific approach. The third phase was the arranging the academic writing, and it has the priority on the arranging of classroom action research (PTK. The teachers were assigned to propose the classroom action research title based on the problem emerged on their classroom. After the teachers have determined the title, the society service team divisible the job to accompany the teachers in arranging the classroom action research. The strategy used in conducting the third phase, the society servicec team acted as the consultant. By the strategies applied, it is expected that the teachers would be more directed in writing and arranging the classroom action research in order to produce the quality academic writing.

  4. Optical rectification through an Al 2 O 3 based MIM passive rectenna at 28.3 THz

    KAUST Repository

    Jayaswal, Gaurav; Belkadi, A.; Meredov, Azat; Pelz, B.; Moddel, G.; Shamim, Atif

    2017-01-01

    Harevesting energy from waste heat which fluctuates between, approximately, 250 K and 1500 K, i.e., peaking at 2–11 μm, could be a game changer in terms of tapping on to renewable energy sources. However, research in this area has remained elusive

  5. A mobile information management system used in textile enterprises

    Science.gov (United States)

    Huang, C.-R.; Yu, W.-D.

    2008-02-01

    The mobile information management system (MIMS) for textile enterprises is based on Microsoft Visual Studios. NET2003 Server, Microsoft SQL Server 2000, C++ language and wireless application protocol (WAP) and wireless markup language (WML) technology. The portable MIMS is composed of three-layer structures, i.e. showing layer; operating layer; and data visiting layer corresponding to the port-link module; processing module; and database module. By using the MIMS, not only the information exchanges become more convenient and easier, but also the compatible between the giant information capacity and a micro-cell phone and functional expansion nature in operating and designing can be realized by means of build-in units. The development of MIMS is suitable for the utilization in textile enterprises.

  6. A mobile information management system used in textile enterprises

    Energy Technology Data Exchange (ETDEWEB)

    Huang, C-R; Yu, W-D [College of Textiles, Donghua University, 1882 west Yan-an Road, Shanghai 200051 (China)], E-mail: wdyu@dhu.edu.cn

    2008-02-15

    The mobile information management system (MIMS) for textile enterprises is based on Microsoft Visual Studios. NET2003 Server, Microsoft SQL Server 2000, C{sup ++} language and wireless application protocol (WAP) and wireless markup language (WML) technology. The portable MIMS is composed of three-layer structures, i.e. showing layer; operating layer; and data visiting layer corresponding to the port-link module; processing module; and database module. By using the MIMS, not only the information exchanges become more convenient and easier, but also the compatible between the giant information capacity and a micro-cell phone and functional expansion nature in operating and designing can be realized by means of build-in units. The development of MIMS is suitable for the utilization in textile enterprises.

  7. A mobile information management system used in textile enterprises

    International Nuclear Information System (INIS)

    Huang, C-R; Yu, W-D

    2008-01-01

    The mobile information management system (MIMS) for textile enterprises is based on Microsoft Visual Studios. NET2003 Server, Microsoft SQL Server 2000, C ++ language and wireless application protocol (WAP) and wireless markup language (WML) technology. The portable MIMS is composed of three-layer structures, i.e. showing layer; operating layer; and data visiting layer corresponding to the port-link module; processing module; and database module. By using the MIMS, not only the information exchanges become more convenient and easier, but also the compatible between the giant information capacity and a micro-cell phone and functional expansion nature in operating and designing can be realized by means of build-in units. The development of MIMS is suitable for the utilization in textile enterprises

  8. TXRF applications for semiconductor materials and process characterization

    International Nuclear Information System (INIS)

    Zaitz, M.A.

    2000-01-01

    In the past 30 years, the semiconductor industry has undergone a dramatic evolution in technology which now has become part of our daily lives. The density of transistors on a chip has grown exponentially, approximately doubling every 18 months or increasing 3200 times. Early chips from the 1970's had about 2300 components on them compared to 7.5 million on today's sophisticated microprocessors. It is an exhausting pace with no let up in sight. Traditional materials are no longer keeping pace. Smaller and smaller circuits require alternative materials and processes. New materials such as high k and low k dielectric are being evaluated to replace silicon dioxide both as a gate material and as an insulator. Copper wiring which has less resistance thereby increasing signal speed is well into manufacturing. Other technologies such as SOI (silicon on insulator) are good candidates to win the battle of speed and performance. To keep this pace of phenomenal creativity going, material characterization and process development needs novel and innovative techniques. The versatility of total reflection x-ray florescence (TXRF) makes it an ideal analytical instrument for research and development studies for ultra trace metal analysis. TXRF can easily measure the surfaces of thin metallic films, but also both low and high K dielectric materials for ultra trace contamination levels. The multiple element capability provides accurate quantitative data over a wide range of elements. Nontraditional elements such as argon which is easily trapped in films during the sputter deposition process are easily detected by TXRF. Advances in light element; Al, Na, Mg, are providing information that was very difficult and time consuming to obtain by other analytical techniques. TXRF analysis on wafers show aluminum contamination patterns from a brush clean study and an ion implanted, shallow doped study. The silicon wafer is the perfect carrier for a TXRF analysis- smooth and highly polished for

  9. Connected vehicle applications : safety.

    Science.gov (United States)

    2016-01-01

    Connected vehicle safety applications are designed to increase situational awareness : and reduce or eliminate crashes through vehicle-to-infrastructure, vehicle-to-vehicle, : and vehicle-to-pedestrian data transmissions. Applications support advisor...

  10. Applicant Satisfaction Survey

    Data.gov (United States)

    Office of Personnel Management — The Chief Human Capital Officers developed 3 surveys that asks applicants to assess their satisfaction with the application process on a 1-10 point scale, with 10...

  11. Web Application Vulnerabilities

    OpenAIRE

    Yadav, Bhanu

    2014-01-01

    Web application security has been a major issue in information technology since the evolvement of dynamic web application. The main objective of this project was to carry out a detailed study on the top three web application vulnerabilities such as injection, cross site scripting, broken authentication and session management, present the situation where an application can be vulnerable to these web threats and finally provide preventative measures against them. ...

  12. Mobile food ordering application

    OpenAIRE

    Yang, Fan

    2014-01-01

    The purpose of this thesis was to build a food ordering client server application for Tom Yum Thai Oy, which is a Thai restaurant in Vaasa. For the customer, this application provides a view of current food information (category, name, image,price, description etc.) on the website and Android application. The customer can order food from these two platforms. For the administrator in restaurant, this application offers a series of operations to add, update, delete and query the information of ...

  13. Scintigraphic imaging of focal hypoxic tissue: development and clinical applications of 123I-IAZA

    Directory of Open Access Journals (Sweden)

    Leonard I. Wiebe

    2002-09-01

    Full Text Available Affected tissues in a number of diseases, including cancer, stroke, cardiac infarction and diabetes, develop focal tissue hypoxia during their progression. The presence of hypoxic tissue may make the disease refractory to therapy, as in the case of solid tumor therapy using low LET ionizing radiation. In other pathologies, the detection of viable but hypoxic tissues may serve as a prodromal indicator of developing disease (e.g. diabetes,or as a prognostic indicator for management of the disease (e.g. stroke. Over the past two decades, a number of hypoxia radioimaging agents have been developed and tested clinically. Of these, 18F-Fmiso and 123I-IAZA are the most widely used radiotracers for PET and SPECT/planar imaging, respectively. IAZA and Fmiso are a 2-nitroimidazoles that chemically bind to subcellular components of viable hypoxic tissues. They sensitize hypoxic tumour to the killing effects of ionizing radiation via mechanisms that mimic the radiosensitizing effects of oxygen, and are therefore called oxygen mimetics. The oxygen mimetic effect is attributable in large part to the covalent binding of reductively-activated nitroimidazole intermediates to critical cellular macromolecules. Nitroimidazoles labelled with gamma-emitting radionuclides (e.g. 18F-Fmiso and 123I-IAZA have been used as scintigraphic markers of tumour hypoxia, based on the need to identify radioresistant hypoxic tumour cells as part of the radiotherapy planning process. Broader interest in non-invasive, imaging-based identification of focal hypoxia in a number of diseases has extended hypoxia studies to include peripheral vascular disease associated with diabetes, rheumatoid arthritis, stroke, myocardial ischaemia, brain trauma and oxidative stress. In this review, the current status of hypoxia-selective studies with 123I-IAZA , an experimental diagnostic radiopharmaceutical, is reviewed with respect to its pre-clinical development and clinical applications.Os tecidos

  14. SIMS applications workshop. Proceedings

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-04-01

    The first ANSTO/AINSE SIMS Workshop drew together a mixture of Surface Analysis experts and Surface Analysis users with the concept that SIMS analysis has to be enfolded within the spectrum of surface analysis techniques and that the user should select the technique most applicable to the problem. With this concept in mind the program was structured as sessions on SIMS Facilities; Applications to Mineral Surfaces; Applications to Biological Systems, Applications to Surfaces as Semi- conductors, Catalysts and Surface Coatings; and Applications to Ceramics

  15. Application Portable Parallel Library

    Science.gov (United States)

    Cole, Gary L.; Blech, Richard A.; Quealy, Angela; Townsend, Scott

    1995-01-01

    Application Portable Parallel Library (APPL) computer program is subroutine-based message-passing software library intended to provide consistent interface to variety of multiprocessor computers on market today. Minimizes effort needed to move application program from one computer to another. User develops application program once and then easily moves application program from parallel computer on which created to another parallel computer. ("Parallel computer" also include heterogeneous collection of networked computers). Written in C language with one FORTRAN 77 subroutine for UNIX-based computers and callable from application programs written in C language or FORTRAN 77.

  16. Criteria for Social Applications

    DEFF Research Database (Denmark)

    Atzenbeck, Claus; Tzagarakis, Manolis

    2007-01-01

    Social networks are becoming increasingly important for a wide number of applications. This is in particular true in the context of the Web 2.0 movement where a number of Web-based applications emerged - termed social networking applications or services - that allow the articulation of social...... relationships between individuals thus creating social networks. Although Web 2.0 applications are a popular and characteristic class of such applications they are not the only representatives that permit such functionality. Applications in the Personal Information Management domain exhibit similar...... characteristics but have never been mentioned in the context of social networking. The increasing number and diversity of such applications makes their study, analysis and evaluation from a systems point of view critical and important as their study may help identify relationships that are useful when attempting...

  17. An improved pseudotargeted metabolomics approach using multiple ion monitoring with time-staggered ion lists based on ultra-high performance liquid chromatography/quadrupole time-of-flight mass spectrometry

    International Nuclear Information System (INIS)

    Wang, Yang; Liu, Fang; Li, Peng; He, Chengwei; Wang, Ruibing; Su, Huanxing; Wan, Jian-Bo

    2016-01-01

    Pseudotargeted metabolomics is a novel strategy integrating the advantages of both untargeted and targeted methods. The conventional pseudotargeted metabolomics required two MS instruments, i.e., ultra-high performance liquid chromatography/quadrupole-time- of-flight mass spectrometry (UHPLC/Q-TOF MS) and UHPLC/triple quadrupole mass spectrometry (UHPLC/QQQ-MS), which makes method transformation inevitable. Furthermore, the picking of ion pairs from thousands of candidates and the swapping of the data between two instruments are the most labor-intensive steps, which greatly limit its application in metabolomic analysis. In the present study, we proposed an improved pseudotargeted metabolomics method that could be achieved on an UHPLC/Q-TOF/MS instrument operated in the multiple ion monitoring (MIM) mode with time-staggered ion lists (tsMIM). Full scan-based untargeted analysis was applied to extract the target ions. After peak alignment and ion fusion, a stepwise ion picking procedure was used to generate the ion lists for subsequent single MIM and tsMIM. The UHPLC/Q-TOF tsMIM MS-based pseudotargeted approach exhibited better repeatability and a wider linear range than the UHPLC/Q-TOF MS-based untargeted metabolomics method. Compared to the single MIM mode, the tsMIM significantly increased the coverage of the metabolites detected. The newly developed method was successfully applied to discover plasma biomarkers for alcohol-induced liver injury in mice, which indicated its practicability and great potential in future metabolomics studies. - Highlights: • An UHPLC/Q-TOF tsMIM MS-based pseudotargeted metabolomics was proposed. • Compared to full scan, the improved method exhibits better repeatability and a wider linear range. • The proposed method could achieve pseudotargeted analysis on one UHPLC/Q-TOF/MS instrument. • The developed method was successfully used to discover biomarkers for alcohol-induced liver injury.

  18. An improved pseudotargeted metabolomics approach using multiple ion monitoring with time-staggered ion lists based on ultra-high performance liquid chromatography/quadrupole time-of-flight mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Yang; Liu, Fang; Li, Peng; He, Chengwei; Wang, Ruibing; Su, Huanxing; Wan, Jian-Bo, E-mail: jbwan@umac.mo

    2016-07-13

    Pseudotargeted metabolomics is a novel strategy integrating the advantages of both untargeted and targeted methods. The conventional pseudotargeted metabolomics required two MS instruments, i.e., ultra-high performance liquid chromatography/quadrupole-time- of-flight mass spectrometry (UHPLC/Q-TOF MS) and UHPLC/triple quadrupole mass spectrometry (UHPLC/QQQ-MS), which makes method transformation inevitable. Furthermore, the picking of ion pairs from thousands of candidates and the swapping of the data between two instruments are the most labor-intensive steps, which greatly limit its application in metabolomic analysis. In the present study, we proposed an improved pseudotargeted metabolomics method that could be achieved on an UHPLC/Q-TOF/MS instrument operated in the multiple ion monitoring (MIM) mode with time-staggered ion lists (tsMIM). Full scan-based untargeted analysis was applied to extract the target ions. After peak alignment and ion fusion, a stepwise ion picking procedure was used to generate the ion lists for subsequent single MIM and tsMIM. The UHPLC/Q-TOF tsMIM MS-based pseudotargeted approach exhibited better repeatability and a wider linear range than the UHPLC/Q-TOF MS-based untargeted metabolomics method. Compared to the single MIM mode, the tsMIM significantly increased the coverage of the metabolites detected. The newly developed method was successfully applied to discover plasma biomarkers for alcohol-induced liver injury in mice, which indicated its practicability and great potential in future metabolomics studies. - Highlights: • An UHPLC/Q-TOF tsMIM MS-based pseudotargeted metabolomics was proposed. • Compared to full scan, the improved method exhibits better repeatability and a wider linear range. • The proposed method could achieve pseudotargeted analysis on one UHPLC/Q-TOF/MS instrument. • The developed method was successfully used to discover biomarkers for alcohol-induced liver injury.

  19. Electronic Submissions of Pesticide Applications

    Science.gov (United States)

    Applications for pesticide registration can be submitted electronically, including forms, studies, and draft product labeling. Applicants need not submit multiple electronic copies of any pieces of their applications.

  20. Graphene for Multi-purpose Applications

    KAUST Repository

    Qaisi, Ramy M.

    2015-12-01

    (used for water purification in self-sustained mode) to demonstrate its effectiveness as a sustainable low-cost mechanically robust transparent material. [Published in ACS Nano 2013, in Energy Technology 2014 as a Cover Article and in Nature Publishing Group Asia Materials 2014] (6) Extensive study to stabilize graphene surface and to use the phenomena for development of a sensor which can monitor the quality of water. [presented in MRS Fall Meeting 2013 and in MRS Fall Meeting 2014] (7) By using graphene as an expose transistor architecture with ultra-scale high-k dielectric, to develop a series of sensor for glucose monitoring. Sensitivity, selectivity, response rate and refresh time has been studied and optimized. [pending review in Nature Scientific Reports 2015] (8) From the lessons learnt during the development of glucose monitoring sensor cell, a sophisticated low-cost ultra-low power mobile graphene based non-invasive sensor has been assembled and clinically trialed in collaboration with King Faisal Hospitals in Jeddah and in Makkah. [pending review in Science 2015] As a future direction, this thesis also discusses potential of graphene growth on electrochemically deposited metallic seed layers and consequential usage in stretchable and transparent graphene antenna development for fully flexible only graphene based integrated electronic system integration.

  1. Technical applications of aerogels

    International Nuclear Information System (INIS)

    Hrubesh, L.W.

    1997-01-01

    Aerogel materials posses such a wide variety of exceptional properties that a striking number of applications have developed for them. Many of the commercial applications of aerogels such as catalysts, thermal insulation, windows, and particle detectors are still under development and new application as have been publicized since the ISA4 Conference in 1994: e.g.; supercapacitors, insulation for heat storage in automobiles, electrodes for capacitive deionization, etc. More applications are evolving as the scientific and engineering community becomes familiar with the unusual and exceptional physical properties of aerogels, there are also scientific and technical application, as well. This paper discusses a variety of applications under development at Lawrence Livermore National Laboratory for which several types of aerogels are formed in custom sizes and shapes. Particular discussions will focus on the uses of aerogels for physics experiments which rely on the exceptional, sometimes unique, properties of aerogels

  2. Industrial Application of Accelerators

    CERN Multimedia

    CERN. Geneva

    2017-01-01

    At CERN, we are very familiar with large, high energy particle accelerators. However, in the world outside CERN, there are more than 35000 accelerators which are used for applications ranging from treating cancer, through making better electronics to removing harmful micro-organisms from food and water. These are responsible for around $0.5T of commerce each year. Almost all are less than 20 MeV and most use accelerator types that are somewhat different from what is at CERN. These lectures will describe some of the most common applications, some of the newer applications in development and the accelerator technology used for them. It will also show examples of where technology developed for particle physics is now being studied for these applications. Rob Edgecock is a Professor of Accelerator Science, with a particular interest in the medical applications of accelerators. He works jointly for the STFC Rutherford Appleton Laboratory and the International Institute for Accelerator Applications at the Univer...

  3. Industrial Application of Accelerators

    CERN Multimedia

    CERN. Geneva

    2017-01-01

    At CERN, we are very familiar with large, high energy particle accelerators. However, in the world outside CERN, there are more than 35000 accelerators which are used for applications ranging from treating cancer, through making better electronics to removing harmful micro-organisms from food and water. These are responsible for around $0.5T of commerce each year. Almost all are less than 20 MeV and most use accelerator types that are somewhat different from what is at CERN. These lectures will describe some of the most common applications, some of the newer applications in development and the accelerator technology used for them. It will also show examples of where technology developed for particle physics is now being studied for these applications. Rob Edgecock is a Professor of Accelerator Science, with a particular interest in the medical applications of accelerators. He works jointly for the STFC Rutherford Appleton Laboratory and the International Institute for Accelerator Applications at the Uni...

  4. Applications of Photocatalytic Disinfection

    Directory of Open Access Journals (Sweden)

    Joanne Gamage

    2010-01-01

    Full Text Available Due to the superior ability of photocatalysis to inactivate a wide range of harmful microorganisms, it is being examined as a viable alternative to traditional disinfection methods such as chlorination, which can produce harmful byproducts. Photocatalysis is a versatile and effective process that can be adapted for use in many applications for disinfection in both air and water matrices. Additionally, photocatalytic surfaces are being developed and tested for use in the context of “self-disinfecting” materials. Studies on the photocatalytic technique for disinfection demonstrate this process to have potential for widespread applications in indoor air and environmental health, biological, and medical applications, laboratory and hospital applications, pharmaceutical and food industry, plant protection applications, wastewater and effluents treatment, and drinking water disinfection. Studies on photocatalytic disinfection using a variety of techniques and test organisms are reviewed, with an emphasis on the end-use application of developed technologies and methods.

  5. Support vector machines applications

    CERN Document Server

    Guo, Guodong

    2014-01-01

    Support vector machines (SVM) have both a solid mathematical background and good performance in practical applications. This book focuses on the recent advances and applications of the SVM in different areas, such as image processing, medical practice, computer vision, pattern recognition, machine learning, applied statistics, business intelligence, and artificial intelligence. The aim of this book is to create a comprehensive source on support vector machine applications, especially some recent advances.

  6. Microprocessors principles and applications

    CERN Document Server

    Debenham, Michael J

    1979-01-01

    Microprocessors: Principles and Applications deals with the principles and applications of microprocessors and covers topics ranging from computer architecture and programmed machines to microprocessor programming, support systems and software, and system design. A number of microprocessor applications are considered, including data processing, process control, and telephone switching. This book is comprised of 10 chapters and begins with a historical overview of computers and computing, followed by a discussion on computer architecture and programmed machines, paying particular attention to t

  7. Applications of combinatorial optimization

    CERN Document Server

    Paschos, Vangelis Th

    2013-01-01

    Combinatorial optimization is a multidisciplinary scientific area, lying in the interface of three major scientific domains: mathematics, theoretical computer science and management. The three volumes of the Combinatorial Optimization series aims to cover a wide range of topics in this area. These topics also deal with fundamental notions and approaches as with several classical applications of combinatorial optimization. "Applications of Combinatorial Optimization" is presenting a certain number among the most common and well-known applications of Combinatorial Optimization.

  8. Android Applications Security

    OpenAIRE

    Paul POCATILU

    2011-01-01

    The use of smartphones worldwide is growing very fast and also the malicious attacks have increased. The mobile security applications development keeps the pace with this trend. The paper presents the vulnerabilities of mobile applications. The Android applications and devices are analyzed through the security perspective. The usage of restricted API is also presented. The paper also focuses on how users can prevent these malicious attacks and propose some prevention measures, including the a...

  9. Galileo Timing Applications

    Science.gov (United States)

    2007-11-01

    public bodies like university and research institutes. The user community analysis also includes a market analysis performed by a specialized company to... companies and public institutions (e.g., universities, research laboratories) that work in several different application domains in order to virtually...Summary of application domains for the use of time in cryptography. B2G B2B B2C Applications Military waypoints, judicial reports, construction

  10. Refrigeration systems and applications

    CERN Document Server

    Dincer, Ibrahim

    2010-01-01

    Refrigeration Systems and Applications, 2nd edition offers a comprehensive treatise that addresses real-life technical and operational problems, enabling the reader to gain an understanding of the fundamental principles and the practical applications of refrigeration technology. New and unique analysis techniques (including exergy as a potential tool), models, correlations, procedures and applications are covered, and recent developments in the field are included - many of which are taken from the author's own research activities in this area. The book also includes so

  11. Exploiting chaos for applications

    Energy Technology Data Exchange (ETDEWEB)

    Ditto, William L., E-mail: wditto@hawaii.edu [Department of Physics and Astronomy, University of Hawaii at Mānoa, Honolulu, Hawaii 96822 (United States); Sinha, Sudeshna, E-mail: sudeshna@iisermohali.ac.in [Indian Institute of Science Education and Research (IISER), Mohali, Knowledge City, Sector 81, SAS Nagar, PO Manauli 140306, Punjab (India)

    2015-09-15

    We discuss how understanding the nature of chaotic dynamics allows us to control these systems. A controlled chaotic system can then serve as a versatile pattern generator that can be used for a range of application. Specifically, we will discuss the application of controlled chaos to the design of novel computational paradigms. Thus, we present an illustrative research arc, starting with ideas of control, based on the general understanding of chaos, moving over to applications that influence the course of building better devices.

  12. Microcomputer interfacing and applications

    CERN Document Server

    Mustafa, M A

    1990-01-01

    This is the applications guide to interfacing microcomputers. It offers practical non-mathematical solutions to interfacing problems in many applications including data acquisition and control. Emphasis is given to the definition of the objectives of the interface, then comparing possible solutions and producing the best interface for every situation. Dr Mustafa A Mustafa is a senior designer of control equipment and has written many technical articles and papers on the subject of computers and their application to control engineering.

  13. Exploiting chaos for applications.

    Science.gov (United States)

    Ditto, William L; Sinha, Sudeshna

    2015-09-01

    We discuss how understanding the nature of chaotic dynamics allows us to control these systems. A controlled chaotic system can then serve as a versatile pattern generator that can be used for a range of application. Specifically, we will discuss the application of controlled chaos to the design of novel computational paradigms. Thus, we present an illustrative research arc, starting with ideas of control, based on the general understanding of chaos, moving over to applications that influence the course of building better devices.

  14. Application Layer Multicast

    Science.gov (United States)

    Allani, Mouna; Garbinato, Benoît; Pedone, Fernando

    An increasing number of Peer-to-Peer (P2P) Internet applications rely today on data dissemination as their cornerstone, e.g., audio or video streaming, multi-party games. These applications typically depend on some support for multicast communication, where peers interested in a given data stream can join a corresponding multicast group. As a consequence, the efficiency, scalability, and reliability guarantees of these applications are tightly coupled with that of the underlying multicast mechanism.

  15. REST based mobile applications

    Science.gov (United States)

    Rambow, Mark; Preuss, Thomas; Berdux, Jörg; Conrad, Marc

    2008-02-01

    Simplicity is the major advantage of REST based webservices. Whereas SOAP is widespread in complex, security sensitive business-to-business aplications, REST is widely used for mashups and end-user centric applicatons. In that context we give an overview of REST and compare it to SOAP. Furthermore we apply the GeoDrawing application as an example for REST based mobile applications and emphasize on pros and cons for the use of REST in mobile application scenarios.

  16. Irregular Applications: Architectures & Algorithms

    Energy Technology Data Exchange (ETDEWEB)

    Feo, John T.; Villa, Oreste; Tumeo, Antonino; Secchi, Simone

    2012-02-06

    Irregular applications are characterized by irregular data structures, control and communication patterns. Novel irregular high performance applications which deal with large data sets and require have recently appeared. Unfortunately, current high performance systems and software infrastructures executes irregular algorithms poorly. Only coordinated efforts by end user, area specialists and computer scientists that consider both the architecture and the software stack may be able to provide solutions to the challenges of modern irregular applications.

  17. Nanomaterials for Defense Applications

    Science.gov (United States)

    Turaga, Uday; Singh, Vinitkumar; Lalagiri, Muralidhar; Kiekens, Paul; Ramkumar, Seshadri S.

    Nanotechnology has found a number of applications in electronics and healthcare. Within the textile field, applications of nanotechnology have been limited to filters, protective liners for chemical and biological clothing and nanocoatings. This chapter presents an overview of the applications of nanomaterials such as nanofibers and nanoparticles that are of use to military and industrial sectors. An effort has been made to categorize nanofibers based on the method of production. This chapter particularly focuses on a few latest developments that have taken place with regard to the application of nanomaterials such as metal oxides in the defense arena.

  18. Application Technology Research Unit

    Data.gov (United States)

    Federal Laboratory Consortium — To conduct fundamental and developmental research on new and improved application technologies to protect floricultural, nursery, landscape, turf, horticultural, and...

  19. Mongoose for application development

    CERN Document Server

    Holmes, Simon

    2013-01-01

    This book is a mini tutorial full of code examples and strategies to give you plenty of options when building your own applications with MongoDB.This book is ideal for people who want to develop applications on the Node.js stack quickly and efficiently. Prior knowledge of the stack is not essential as the book briefly covers the installation of the core components and builds all aspects of the example application. The focus of the book is on what Mongoose adds to you applications, so experienced Node.js developers will also benefit.

  20. Hardening Azure applications

    CERN Document Server

    Gaurav, Suraj

    2015-01-01

    Learn what it takes to build large scale, mission critical applications -hardened applications- on the Azure cloud platform. This 208 page book covers the techniques and engineering principles that every architect and developer needs to know to harden their Azure/.NET applications to ensure maximum reliability and high availability when deployed at scale. While the techniques are implemented in .NET and optimized for Azure, the principles here will also be valuable for users of other cloud-based development platforms. Applications come in a variety of forms, from simple apps that can be bui

  1. Electrical applications 2

    CERN Document Server

    Tyler, David W

    1998-01-01

    Electrical Applications 2 covers the BTEC NII level objectives in Electrical Applications U86/330. To understand the applications, a knowledge of the underlying principles is needed and these are covered briefly in the text. Key topics discussed are: the transmission and distribution of electrical energy; safety and regulations; tariffs and power factor correction; materials and their applications in the electrical industry; transformers; DC machines; illumination; and fuse protection. Included in each chapter are worked examples which should be carefully worked through before progressing to t

  2. Nanotechnology in Aerospace Applications

    National Research Council Canada - National Science Library

    Meyyappan, M

    2007-01-01

    The aerospace applications for nanotechnology include high strength, low weight composites, improved electronics and displays with low power consumption, variety of physical sensors, multifunctional...

  3. Advertising on mobile applications

    OpenAIRE

    Sobolevsky, Alexandr

    2015-01-01

    The article analyzes the new method of mobile advertising. Advertising in mobile applications - a subspecies of mobile marketing, where advertising is distributed using mobile phones and smartphones. Ad placement is going on inside of applications and games for smartphones. It has a high potential due to the large number of mobile phone users (over 6.5 billion in 2013).

  4. Dilemmas in SEA application

    DEFF Research Database (Denmark)

    Lyhne, Ivar

    Dilemmas in SEA Application: The DK Energy SectorIvar Lyhne - lyhne@plan.aau.dk. Based on three years of collaborative research, this paper outlines dilemmas in the application of SEA in the strategic development of the Danish energy sector. The dilemmas are based on concrete examples from practice...

  5. Medical application of EPR

    International Nuclear Information System (INIS)

    Eichhoff, Uwe; Hoefer, Peter

    2015-01-01

    Selected applications of continuous-wave EPR in medicine are reviewed. This includes detection of reactive oxygen and nitrogen species, pH measurements and oxymetry. Applications of EPR imaging are demonstrated on selected examples and future developments to faster imaging methods are discussed

  6. Connected vehicle application : safety.

    Science.gov (United States)

    2015-01-01

    Connected vehicle safety applications are designed to increase situational awareness : and reduce or eliminate crashes through vehicle-to-infrastructure (V2I), vehicle-to-vehicle (V2V), and vehicle-to-pedestrian (V2P) data transmissions. Applications...

  7. Industrial applications and metallurgy

    International Nuclear Information System (INIS)

    Torres M, N.; Melendrez C, G.; Morales, F.L.

    1989-01-01

    From 1961 the use of nuclear energy in the industrial field in Colombia has a big advance. Today nuclear isotopes are used by private companies in this kind of application the Area of Industrial Applications and Metallurgy was the institution section that has trained and has transferred the technology needed for this purpose

  8. Energy applications of superconductivity

    International Nuclear Information System (INIS)

    Schneider, T.R.; Dale, S.J.; Wolf, S.M.

    1991-01-01

    Recent progress in developing high-temperature superconductors has enhanced the economic viability of energy applications such as power systems, motors, material processing and handling, refrigeration, transportation, and power electronics. This paper discusses the technical and economic issues associated with these applications

  9. Applications of Evolutionary Computation

    NARCIS (Netherlands)

    Mora, Antonio M.; Squillero, Giovanni; Di Chio, C; Agapitos, Alexandros; Cagnoni, Stefano; Cotta, Carlos; Fernández De Vega, F; Di Caro, G A; Drechsler, R.; Ekárt, A; Esparcia-Alcázar, Anna I.; Farooq, M; Langdon, W B; Merelo-Guervós, J.J.; Preuss, M; Richter, O.-M.H.; Silva, Sara; Sim$\\$~oes, A; Squillero, Giovanni; Tarantino, Ernesto; Tettamanzi, Andrea G B; Togelius, J; Urquhart, Neil; Uyar, A S; Yannakakis, G N; Smith, Stephen L; Caserta, Marco; Ramirez, Adriana; Voß, Stefan; Squillero, Giovanni; Burelli, Paolo; Mora, Antonio M.; Squillero, Giovanni; Jan, Mathieu; Matthias, M; Di Chio, C; Agapitos, Alexandros; Cagnoni, Stefano; Cotta, Carlos; Fernández De Vega, F; Di Caro, G A; Drechsler, R.; Ekárt, A; Esparcia-Alcázar, Anna I.; Farooq, M; Langdon, W B; Merelo-Guervós, J.J.; Preuss, M; Richter, O.-M.H.; Silva, Sara; Sim$\\$~oes, A; Squillero, Giovanni; Tarantino, Ernesto; Tettamanzi, Andrea G B; Togelius, J; Urquhart, Neil; Uyar, A S; Yannakakis, G N; Caserta, Marco; Ramirez, Adriana; Voß, Stefan; Squillero, Giovanni; Burelli, Paolo; Esparcia-Alcazar, Anna I; Silva, Sara; Agapitos, Alexandros; Cotta, Carlos; De Falco, Ivanoe; Cioppa, Antonio Della; Diwold, Konrad; Ekart, Aniko; Tarantino, Ernesto; Vega, Francisco Fernandez De; Burelli, Paolo; Sim, Kevin; Cagnoni, Stefano; Simoes, Anabela; Merelo, J.J.; Urquhart, Neil; Haasdijk, Evert; Zhang, Mengjie; Squillero, Giovanni; Eiben, A E; Tettamanzi, Andrea G B; Glette, Kyrre; Rohlfshagen, Philipp; Schaefer, Robert; Caserta, Marco; Ramirez, Adriana; Voß, Stefan

    2015-01-01

    The application of genetic and evolutionary computation to problems in medicine has increased rapidly over the past five years, but there are specific issues and challenges that distinguish it from other real-world applications. Obtaining reliable and coherent patient data, establishing the clinical

  10. Application Security Automation

    Science.gov (United States)

    Malaika, Majid A.

    2011-01-01

    With today's high demand for online applications and services running on the Internet, software has become a vital component in our lives. With every revolutionary technology comes challenges unique to its characteristics; for online applications, security is one huge concern and challenge. Currently, there are several schemes that address…

  11. Engineering Adaptive Applications

    DEFF Research Database (Denmark)

    Dolog, Peter

    for a domain.In this book, we propose a new domain engineering framework which extends a development process of Web applications with techniques required when designing such adaptive customizable Web applications. The framework is provided with design abstractions which deal separately with information served...

  12. Modelling Foundations and Applications

    DEFF Research Database (Denmark)

    This book constitutes the refereed proceedings of the 8th European Conference on Modelling Foundations and Applications, held in Kgs. Lyngby, Denmark, in July 2012. The 20 revised full foundations track papers and 10 revised full applications track papers presented were carefully reviewed...

  13. Computer algebra applications

    International Nuclear Information System (INIS)

    Calmet, J.

    1982-01-01

    A survey of applications based either on fundamental algorithms in computer algebra or on the use of a computer algebra system is presented. Recent work in biology, chemistry, physics, mathematics and computer science is discussed. In particular, applications in high energy physics (quantum electrodynamics), celestial mechanics and general relativity are reviewed. (Auth.)

  14. Nanomaterials in biomedical applications

    DEFF Research Database (Denmark)

    Christiansen, Jesper de Claville; Potarniche, Catalina-Gabriela; Vuluga, Z.

    2011-01-01

    Advances in nano materials have lead to applications in many areas from automotive to electronics and medicine. Nano composites are a popular group of nano materials. Nanocomposites in medical applications provide novel solutions to common problems. Materials for implants, biosensors and drug del...

  15. Progressive Web applications

    CERN Multimedia

    CERN. Geneva

    2017-01-01

    Progressive Web Applications are native-like applications running inside of a browser context. In my presentation I would like describe their characteristics, benchmarks and building process using a quick and simple case study example with focus on Service Workers api.

  16. Rayleigh reciprocity relations: Applications

    International Nuclear Information System (INIS)

    Lin Ju; Li Xiao-Lei; Wang Ning

    2016-01-01

    Classical reciprocity relations have wide applications in acoustics, from field representation to generalized optical theorem. In this paper we introduce our recent results on the applications and generalization of classical Rayleigh reciprocity relation: higher derivative reciprocity relations as a generalization of the classical one and a theoretical proof on the Green’s function retrieval from volume noises. (special topic)

  17. Database Application Schema Forensics

    Directory of Open Access Journals (Sweden)

    Hector Quintus Beyers

    2014-12-01

    Full Text Available The application schema layer of a Database Management System (DBMS can be modified to deliver results that may warrant a forensic investigation. Table structures can be corrupted by changing the metadata of a database or operators of the database can be altered to deliver incorrect results when used in queries. This paper will discuss categories of possibilities that exist to alter the application schema with some practical examples. Two forensic environments are introduced where a forensic investigation can take place in. Arguments are provided why these environments are important. Methods are presented how these environments can be achieved for the application schema layer of a DBMS. A process is proposed on how forensic evidence should be extracted from the application schema layer of a DBMS. The application schema forensic evidence identification process can be applied to a wide range of forensic settings.

  18. Geometry and its applications

    CERN Document Server

    Meyer, Walter J

    2006-01-01

    Meyer''s Geometry and Its Applications, Second Edition, combines traditional geometry with current ideas to present a modern approach that is grounded in real-world applications. It balances the deductive approach with discovery learning, and introduces axiomatic, Euclidean geometry, non-Euclidean geometry, and transformational geometry. The text integrates applications and examples throughout and includes historical notes in many chapters. The Second Edition of Geometry and Its Applications is a significant text for any college or university that focuses on geometry''s usefulness in other disciplines. It is especially appropriate for engineering and science majors, as well as future mathematics teachers.* Realistic applications integrated throughout the text, including (but not limited to): - Symmetries of artistic patterns- Physics- Robotics- Computer vision- Computer graphics- Stability of architectural structures- Molecular biology- Medicine- Pattern recognition* Historical notes included in many chapters...

  19. Applications of ionizing radiations

    International Nuclear Information System (INIS)

    2014-01-01

    Developments in standard applications and brand new nuclear technologies, with high impact on the future of the agriculture, medicine, industry and the environmental preservation. The Radiation Technology Center (CTR) mission is to apply the radiation and radioisotope technologies in Industry, Health, Agriculture, and Environmental Protection, expanding the scientific knowledge, improving human power resources, transferring technology, generating products and offering services for the Brazilian society. The CTR main R and D activities are in consonance with the IPEN Director Plan (2011-2013) and the Applications of Ionizing Radiation Program, with four subprograms: Irradiation of Food and Agricultural Products; Radiation and Radioisotopes Applications in Industry and Environment; Radioactive Sources and Radiation Applications in Human Health; and Radioactive Facilities and Equipment for the Applications of Nuclear Techniques

  20. GPU computing and applications

    CERN Document Server

    See, Simon

    2015-01-01

    This book presents a collection of state of the art research on GPU Computing and Application. The major part of this book is selected from the work presented at the 2013 Symposium on GPU Computing and Applications held in Nanyang Technological University, Singapore (Oct 9, 2013). Three major domains of GPU application are covered in the book including (1) Engineering design and simulation; (2) Biomedical Sciences; and (3) Interactive & Digital Media. The book also addresses the fundamental issues in GPU computing with a focus on big data processing. Researchers and developers in GPU Computing and Applications will benefit from this book. Training professionals and educators can also benefit from this book to learn the possible application of GPU technology in various areas.

  1. Applications of ionizing radiations

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2014-07-01

    Developments in standard applications and brand new nuclear technologies, with high impact on the future of the agriculture, medicine, industry and the environmental preservation. The Radiation Technology Center (CTR) mission is to apply the radiation and radioisotope technologies in Industry, Health, Agriculture, and Environmental Protection, expanding the scientific knowledge, improving human power resources, transferring technology, generating products and offering services for the Brazilian society. The CTR main R and D activities are in consonance with the IPEN Director Plan (2011-2013) and the Applications of Ionizing Radiation Program, with four subprograms: Irradiation of Food and Agricultural Products; Radiation and Radioisotopes Applications in Industry and Environment; Radioactive Sources and Radiation Applications in Human Health; and Radioactive Facilities and Equipment for the Applications of Nuclear Techniques.

  2. Critical assessment of the available technologies for sanitation of contaminated soil and their limits of application

    International Nuclear Information System (INIS)

    Nussbaumer, M.; Glaeser, E.

    1993-01-01

    Sanitation of polluted land comprises safety measures and soil purification measures. Soil purification can take place either in situ, or on-site or off-site after digging up the contaminated soil. In-situ processes are soil deaeration, groundwater purification and biological methods. Soil deaeration is suited for volatile pollutants in the unsaturated zone of loose soils, while groundwater purification is commonly applied for water-soluble pollutants in the saturated zone of soils with a high k f value. On-site or off-site purification of contaminated soils can take place by thermal processes, by soil washing, by microorganisms, or by physical processes. Thermal processes have the widest range of applications; they are suited for most soils polluted with mostly organic pollutants, and the residual contamination is lowest. Soil washing is limited to sandy and noncohesive soils and for emulsifiable or elutable pollutants. Biological on-site and off-line methods are limited to biodegradable pollutants which are not in phase. Loosening agents may be added in order to overcome geotechnical limitations. Physical purification of soils is limited to specific applications e.g. removal of volatile hydrocarbons. (orig.) [de

  3. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications.

    Science.gov (United States)

    Vidor, Fábio F; Meyers, Thorsten; Hilleringmann, Ulrich

    2016-08-23

    Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high- k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the I ON / I OFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V / V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  4. Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

    Directory of Open Access Journals (Sweden)

    Fábio F. Vidor

    2016-08-01

    Full Text Available Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

  5. Stirling engine application study

    Science.gov (United States)

    Teagan, W. P.; Cunningham, D.

    1983-01-01

    A range of potential applications for Stirling engines in the power range from 0.5 to 5000 hp is surveyed. Over one hundred such engine applications are grouped into a small number of classes (10), with the application in each class having a high degree of commonality in technical performance and cost requirements. A review of conventional engines (usually spark ignition or Diesel) was then undertaken to determine the degree to which commercial engine practice now serves the needs of the application classes and to detemine the nature of the competition faced by a new engine system. In each application class the Stirling engine was compared to the conventional engines, assuming that objectives of ongoing Stirling engine development programs are met. This ranking process indicated that Stirling engines showed potential for use in all application classes except very light duty applications (lawn mowers, etc.). However, this potential is contingent on demonstrating much greater operating life and reliability than has been demonstrated to date by developmental Stirling engine systems. This implies that future program initiatives in developing Stirling engine systems should give more emphasis to life and reliability issues than has been the case in ongoing programs.

  6. OCT for industrial applications

    Science.gov (United States)

    Song, Guiju; Harding, Kevin

    2012-11-01

    Optical coherence tomography (OCT), as an interferometric method, has been studied as a distance ranger. As a technology capable of producing high-resolution, depth-resolved images of biological tissue, OCT had been widely used for the application of ophthalmology and has been commercialized in the market today. Enlightened by the emerging research interest in biomedical domain, the applications of OCT in industrial inspection were rejuvenated by a few groups to explore its potential for characterizing new materials, imaging or inspecting industrial parts as a service solution[3]. Benefiting from novel photonics components and devices, the industrial application of the older concepts in OCT can be re-visited with respect to the unique performance and availability. Commercial OCT developers such as Michelson Diagnostics (MDL; Orpington, U.K.) and Thorlabs (Newton, NJ) are actively exploring the application of OCT to industrial applications and they have outlined meaningful path toward the metrology application in emerging industry[3]. In this chapter, we will introduce the fundamental concepts of OCT and discuss its current and potential industrial applications.

  7. The application of RFQs

    International Nuclear Information System (INIS)

    Schempp, A.

    1992-01-01

    The Radio Frequency Quadrupole Accelerator (RFQ) has found wide application, not only as the preinjector linac for new high energy light ion accelerators but also in a variety of other projects. Progress in development has made ion linacs practical for medical and industrial applications including radiation therapy, isotope and neutron production, material modification and ion beam diagnostic. The paper discusses various projects together with applications in science where RFQs serve as stand-alone tools, for example for the calibration of detectors, as decelerators or as small compact beam sources for atomic physics and materials research. (Author) 7 figs., 40 refs

  8. Lift application development cookbook

    CERN Document Server

    Garcia, Gilberto T

    2013-01-01

    Lift Application Development Cookbook contains practical recipes on everything you will need to create secure web applications using this amazing framework.The book first teaches you basic topics such as starting a new application and gradually moves on to teach you advanced topics to achieve a certain task. Then, it explains every step in detail so that you can build your knowledge about how things work.This book is for developers who have at least some basic knowledge about Scala and who are looking for a functional, secure, and modern web framework. Prior experience with HTML and JavaScript

  9. Biomedical applications of polymers

    CERN Document Server

    Gebelein, C G

    1991-01-01

    The biomedical applications of polymers span an extremely wide spectrum of uses, including artificial organs, skin and soft tissue replacements, orthopaedic applications, dental applications, and controlled release of medications. No single, short review can possibly cover all these items in detail, and dozens of books andhundreds of reviews exist on biomedical polymers. Only a few relatively recent examples will be cited here;additional reviews are listed under most of the major topics in this book. We will consider each of the majorclassifications of biomedical polymers to some extent, inclu

  10. Underground engineering applications

    Energy Technology Data Exchange (ETDEWEB)

    Nordyke, M D [Lawrence Radiation Laboratory, Livermore, CA (United States)

    1969-07-01

    Developments of any underground engineering application utilizing nuclear explosives involve answering the same questions one encounters in any new area of technology: What are the characteristics of the new tool? How is it applicable to the job to be done? Is it safe to use? and, most importantly, is its use economically acceptable? The many facets of the answers to these questions will be explored. The general types of application presently under consideration will also be reviewed, with particular emphasis on those specific projects actively being worked on by commercial interests and by the U.S. Atomic Energy Commission. (author)

  11. Excimer laser applications

    International Nuclear Information System (INIS)

    Fantoni, R.

    1988-01-01

    This lecture deals with laser induced material photoprocessing, especially concerning those processes which are initiated by u.v. lasers (mostly excimer laser). Advantages of using the u.v. radiation emitted by excimer lasers, both in photophysical and photochemical processes of different materials, are discussed in detail. Applications concerning microelectronics are stressed with respect to other applications in different fields (organic chemistry, medicine). As further applications of excimer lasers, main spectroscopic techniques for ''on line'' diagnostics which employ excimer pumped dye lasers, emitting tunable radiation in the visible and near u.v. are reviewed

  12. Android Applications Security

    Directory of Open Access Journals (Sweden)

    Paul POCATILU

    2011-01-01

    Full Text Available The use of smartphones worldwide is growing very fast and also the malicious attacks have increased. The mobile security applications development keeps the pace with this trend. The paper presents the vulnerabilities of mobile applications. The Android applications and devices are analyzed through the security perspective. The usage of restricted API is also presented. The paper also focuses on how users can prevent these malicious attacks and propose some prevention measures, including the architecture of a mobile security system for Android devices.

  13. Handbook of satellite applications

    CERN Document Server

    Madry, Scott; Camacho-Lara, Sergio

    2017-01-01

    The first edition of this ground breaking reference work was the most comprehensive reference source available about the key aspects of the satellite applications field. This updated second edition covers the technology, the markets, applications and regulations related to satellite telecommunications, broadcasting and networking—including civilian and military systems; precise satellite navigation and timing networks (i.e. GPS and others); remote sensing and meteorological satellite systems. Created under the auspices of the International Space University based in France, this brand new edition is now expanded to cover new innovative small satellite constellations, new commercial launching systems, innovation in military application satellites and their acquisition, updated appendices, a useful glossary and more.

  14. Professional Tizen application development

    CERN Document Server

    Jaygarl, HoJun; Kim, YoonSoo; Choi, Eunyoung; Bradwick, Kevin; Lansdell

    2014-01-01

    Create powerful, marketable applications with Tizen for the smartphone and beyond  Tizen is the only platform designed for multiple device categories that is HTML5-centric and entirely open source. Written by experts in the field, this comprehensive guide includes chapters on both web and native application development, covering subjects such as location and social features, advanced UIs, animations, sensors and multimedia. This book is a comprehensive resource for learning how to develop Tizen web and native applications that are polished, bug-free and ready to sell on a range of smart dev

  15. Underground engineering applications

    International Nuclear Information System (INIS)

    Nordyke, M.D.

    1969-01-01

    Developments of any underground engineering application utilizing nuclear explosives involve answering the same questions one encounters in any new area of technology: What are the characteristics of the new tool? How is it applicable to the job to be done? Is it safe to use? and, most importantly, is its use economically acceptable? The many facets of the answers to these questions will be explored. The general types of application presently under consideration will also be reviewed, with particular emphasis on those specific projects actively being worked on by commercial interests and by the U.S. Atomic Energy Commission. (author)

  16. Mobile Application Recommender System

    OpenAIRE

    Davidsson, Christoffer

    2010-01-01

    With the amount of mobile applications available increasing rapidly, users have to put a lot of effort into finding applications of interest. The purpose of this thesis is to investigate how to aid users in the process of discovering new mobile applications by providing them with recommendations. A prototype system is then built as a proof-of-concept. The work of the thesis is divided into three phases where the aim of the first phase is to study related work and related systems to identify p...

  17. Professional Cocoa Application Security

    CERN Document Server

    Lee, Graham J

    2010-01-01

    The first comprehensive security resource for Mac and iPhone developers. The Mac platform is legendary for security, but consequently, Apple developers have little appropriate security information available to help them assure that their applications are equally secure. This Wrox guide provides the first comprehensive go-to resource for Apple developers on the available frameworks and features that support secure application development.: While Macs are noted for security, developers still need to design applications for the Mac and the iPhone with security in mind; this guide offers the first

  18. Developing Large Web Applications

    CERN Document Server

    Loudon, Kyle

    2010-01-01

    How do you create a mission-critical site that provides exceptional performance while remaining flexible, adaptable, and reliable 24/7? Written by the manager of a UI group at Yahoo!, Developing Large Web Applications offers practical steps for building rock-solid applications that remain effective even as you add features, functions, and users. You'll learn how to develop large web applications with the extreme precision required for other types of software. Avoid common coding and maintenance headaches as small websites add more pages, more code, and more programmersGet comprehensive soluti

  19. Superconductivity and its application

    International Nuclear Information System (INIS)

    Spadoni, M.

    1988-01-01

    This paper, after a short introduction to superconductivity and to multifilamentary superconducting composites is aiming to review the state of the art and the future perspective of some of the applications of the superconducting materials. The main interest is focussed to large scale applications like, for istance, magnets for accelerators or fusion reactors, superconducting system for NMR thomography, etc. A short paragraph is dedicated to applications for high sensitivity instrumentation. The paper is then concluded by some considerations about the potentialities of the newly discovered high critical temperature materials

  20. Express web application development

    CERN Document Server

    Yaapa, Hage

    2013-01-01

    Express Web Application Development is a practical introduction to learning about Express. Each chapter introduces you to a different area of Express, using screenshots and examples to get you up and running as quickly as possible.If you are looking to use Express to build your next web application, ""Express Web Application Development"" will help you get started and take you right through to Express' advanced features. You will need to have an intermediate knowledge of JavaScript to get the most out of this book.

  1. Application of expert systems

    Energy Technology Data Exchange (ETDEWEB)

    Basden, A

    1983-11-01

    This article seeks to bring together a number of issues relevant to the application of expert systems by discussing their advantages and limitations, their roles and benefits, and the influence that real-life applications might have on the design of expert systems software. Part of the expert systems strategy of one major chemical company is outlined. Because it was in constructing one particular expert system that many of these issues became important this system is described briefly at the start of the paper and used to illustrate much of the later discussion. It is of the plausible-inference type and has application in the field of materials engineering. 22 references.

  2. Biomaterials and therapeutic applications

    Science.gov (United States)

    Ferraro, Angelo

    2016-03-01

    A number of organic and inorganic, synthetic or natural derived materials have been classified as not harmful for the human body and are appropriate for medical applications. These materials are usually named biomaterials since they are suitable for introduction into living human tissues of prosthesis, as well as for drug delivery, diagnosis, therapies, tissue regeneration and many other clinical applications. Recently, nanomaterials and bioabsorbable polymers have greatly enlarged the fields of application of biomaterials attracting much more the attention of the biomedical community. In this review paper I am going to discuss the most recent advances in the use of magnetic nanoparticles and biodegradable materials as new biomedical tools.

  3. Building Social Web Applications

    CERN Document Server

    Bell, Gavin

    2009-01-01

    Building a web application that attracts and retains regular visitors is tricky enough, but creating a social application that encourages visitors to interact with one another requires careful planning. This book provides practical solutions to the tough questions you'll face when building an effective community site -- one that makes visitors feel like they've found a new home on the Web. If your company is ready to take part in the social web, this book will help you get started. Whether you're creating a new site from scratch or reworking an existing site, Building Social Web Applications

  4. Professional mobile application development

    CERN Document Server

    McWherter, Jeff

    2012-01-01

    Create applications for all major smartphone platforms Creating applications for the myriad versions and varieties of mobile phone platforms on the market can be daunting to even the most seasoned developer. This authoritative guide is written in such as way that it takes your existing skills and experience and uses that background as a solid foundation for developing applications that cross over between platforms, thereby freeing you from having to learn a new platform from scratch each time. Concise explanations walk you through the tools and patterns for developing for all the mobile platfo

  5. User Types in Online Applications

    Directory of Open Access Journals (Sweden)

    Ion IVAN

    2011-08-01

    Full Text Available Online applications are presented in the context of information society. Online applications characteristics are analyzed. Quality characteristics are presented in relation to online applications users. Types of users for AVIO application are presented. Use cases for AVIO application are identified. The limitations of AVIO application are defined. Types of users in online applications are identified. The threedimensional matrix of access to the online application resources is built. The user type-oriented database is structured. Access management of the fields related to the database tables is analyzed. The classification of online applications users is done.

  6. Designing Adaptive Web Applications

    DEFF Research Database (Denmark)

    Dolog, Peter

    2008-01-01

    Learning system to study a discipline. In business to business interaction, different requirements and parameters of exchanged business requests might be served by different services from third parties. Such applications require certain intelligence and a slightly different approach to design. Adpative web......The unique characteristic of web applications is that they are supposed to be used by much bigger and diverse set of users and stakeholders. An example application area is e-Learning or business to business interaction. In eLearning environment, various users with different background use the e......-based applications aim to leave some of their features at the design stage in the form of variables which are dependent on several criteria. The resolution of the variables is called adaptation and can be seen from two perspectives: adaptation by humans to the changed requirements of stakeholders and dynamic system...

  7. Nanobiomaterials development and applications

    CERN Document Server

    Papaefthymiou-Davis, Georgia C

    2013-01-01

    Nanomaterials in Nanobiotechnologies: Preparation, Characterization, and ApplicationsBio-Inspired Magnetic NanoparticlesGeorgia C. Papaefthymiou and Eamonn DevlinNanoparticles for BioimagingHye Sun Park and Yong Taik LimBiomedical Applications of Dendrimer Porphyrin or PhthalocyanineWoo-Dong Jang and Won-Gun KohPolymeric Nanoparticles in Cancer TherapyHeebeom Koo, Ji Young Yhee, Ick Chan Kwon, Kwangmeyung Kim, and Ramesh SubbiahCarbon Nanotube BioconjugatesMonica Samal, Dong Kee Yi, and Shashadhar SamalBiocatalytic NanosystemsJaehong Lim and Su Seong LeeMagnetically Induced Hyperthermia for Biomedical ApplicationsMichael Fardis, Ioannis Rabias, Georgios Diamantopoulos, Eleni Karakosta, Danai Tsitrouli, Vassilios Tzitzios, and Georgios PapavassiliouSoft Block Nanobuilding: New Preparation Routes of Soft Nanomaterials Using BiomoleculesEngineered Biomolecules as NanomaterialsYun Jung Lee and Ki Tae NamNanomaterials and Bio-MEMS: Nano- and Microscale Hybridization of Materials and ApplicationsMicrofluidic-Based ...

  8. Pedal Application Errors

    Science.gov (United States)

    2012-03-01

    This project examined the prevalence of pedal application errors and the driver, vehicle, roadway and/or environmental characteristics associated with pedal misapplication crashes based on a literature review, analysis of news media reports, a panel ...

  9. Microtron for radiation applications

    International Nuclear Information System (INIS)

    Soni, H.C.; Ramamurthi, S.S.

    1993-01-01

    The electron accelerator called microtron is a powerful tool for research, medical and industrial applications which need electron beam in energy range of few tens of MeV. Either electron beam from microtron is directly used for radiation applications or electron beam is utilized to produce x-rays or neutrons which are eventually used for radiation applications. After considering the vast potential, lower cost, simpler construction and excellent quality of electron beam from microtron, it was decided to develop this machine at Centre for Advanced Technology (CAT). The microtrons in two standard models have been developed which will cover all the above mentioned applications except free electron lasers. The microtron of model 1 provides electron beam of 20 MeV, 15/30 mA and that of model 2 provides electron beam of 8/12 MeV, 50/30 mA. (author). 2 figs., 1 tab

  10. Applications of quantum chromodynamics

    International Nuclear Information System (INIS)

    Field, R.D.

    1979-01-01

    Perturbative application of the theory of Quantum Chromodynamics (QCQ) are examined and compared with experimental data. Particular emphasis is placed on understanding the similarities and differences between the QCD results and the expectations of the naive parton model

  11. Thermoluminescence and applications

    International Nuclear Information System (INIS)

    Rodrigues, G.V.

    1986-01-01

    The theory of thermoluminescent emission, the characteristics of main thermoluminescent phosphorus, and some applications are presented. The main thermoluminescent dosemeters used in dosimetry are related. (M.C.K.)

  12. Thermoluminescence and their applications

    International Nuclear Information System (INIS)

    Rodrigues, G.V.

    1986-01-01

    The theory involved in the phenomenon of thermoluminescence emission, the characteristics of the main thermoluminescent phosphorus and some of their applications are presented. Some of the main thermoluminescent dosemeters used in dosimetry are described. (M.C.K.) [pt

  13. BIOSENSORS FOR ENVIRONMENTAL APPLICATIONS

    Science.gov (United States)

    A review, with 19 references, is given on challenges and possible opportunities for the development of biosensors for environmental monitoring applications. The high cost and slow turnaround times typically associated with the measurement of regulated pollutants clearly indicates...

  14. Nuclear Technology applications

    International Nuclear Information System (INIS)

    Cibils Machado, W. E- mail: wrcibils@adinet.com.uy

    2002-01-01

    The present work tries on the applications of the nuclear technology in the life daily, such as agriculture and feeding, human health, industry, non destructive essays, isotopic hydrology, and the nuclear power stations for electricity production and radioisotopes production

  15. Evolution of Mobile Applications

    Directory of Open Access Journals (Sweden)

    Phongtraychack Anachack

    2018-01-01

    Full Text Available Currently, we can see the rapid evolution of mobile technology, which involves mobile communication, mobile hardware, and mobile software. Features of mobile phones largely depend on software. In contemporary information and communication age [1–4], mobile application is one of the most concerned and rapidly developing areas. At the same time, the development of mobile application undergoes great changes with the introduction of new software, service platforms and software development kits (SDK. These changes lead to appearance of many new service platforms such as Google with Android and Apple with iOS. This article presents the information about the evolution of mobile application, gives some statistical data on the past and present situation, demonstrates how individual users of mobile devices can benefit, and shows how mobile applications affect society from the ethical perspective.

  16. Thermal Cameras and Applications

    DEFF Research Database (Denmark)

    Gade, Rikke; Moeslund, Thomas B.

    2014-01-01

    Thermal cameras are passive sensors that capture the infrared radiation emitted by all objects with a temperature above absolute zero. This type of camera was originally developed as a surveillance and night vision tool for the military, but recently the price has dropped, significantly opening up...... a broader field of applications. Deploying this type of sensor in vision systems eliminates the illumination problems of normal greyscale and RGB cameras. This survey provides an overview of the current applications of thermal cameras. Applications include animals, agriculture, buildings, gas detection......, industrial, and military applications, as well as detection, tracking, and recognition of humans. Moreover, this survey describes the nature of thermal radiation and the technology of thermal cameras....

  17. Thermodynamics foundations and applications

    CERN Document Server

    Gyftopoulos, Elias P

    2005-01-01

    Designed by two MIT professors, this authoritative text discusses basic concepts and applications in detail, emphasizing generality, definitions, and logical consistency. More than 300 solved problems cover realistic energy systems and processes.

  18. Wordpress web application development

    CERN Document Server

    Ratnayake, Rakhitha Nimesh

    2015-01-01

    This book is intended for WordPress developers and designers who want to develop quality web applications within a limited time frame and for maximum profit. Prior knowledge of basic web development and design is assumed.

  19. Applications of decelerated ions

    International Nuclear Information System (INIS)

    Johnson, B.M.

    1985-03-01

    Many facilities whose sole purpose had been to accelerate ion beams are now becoming decelerators as well. The development and current status of accel-decel operations is reviewed here. Applications of decelerated ions in atomic physics experiments are discussed

  20. Applications of Piezoelectric Ceramics

    Indian Academy of Sciences (India)

    Applications of Piezoelectric Ceramics. Piezoelectric Actuators. Nano and Micropositioners. Vibration Control Systems. Computer Printers. Piezoelectric Transformers,Voltage Generators, Spark Plugs, Ultrasonic Motors,. Ultrasonic Generators and Sensors. Sonars, Medical Diagnostic. Computer Memories. NVFRAM ...

  1. Engineering Adaptive Web Applications

    DEFF Research Database (Denmark)

    Dolog, Peter

    2007-01-01

    suit the user profile the most. This paper summarizes the domain engineering framework for such adaptive web applications. The framework provides guidelines to develop adaptive web applications as members of a family. It suggests how to utilize the design artifacts as knowledge which can be used......Information and services on the web are accessible for everyone. Users of the web differ in their background, culture, political and social environment, interests and so on. Ambient intelligence was envisioned as a concept for systems which are able to adapt to user actions and needs....... With the growing amount of information and services, the web applications become natural candidates to adopt the concepts of ambient intelligence. Such applications can deal with divers user intentions and actions based on the user profile and can suggest the combination of information content and services which...

  2. Special functions & their applications

    CERN Document Server

    Lebedev, N N

    1972-01-01

    Famous Russian work discusses the application of cylinder functions and spherical harmonics; gamma function; probability integral and related functions; Airy functions; hyper-geometric functions; more. Translated by Richard Silverman.

  3. Capital Projects Application (CPA)

    Data.gov (United States)

    General Services Administration — Capital Projects application (CPA) provides users with the ability to maintain project related financial data for Budget Activity (BA) 51, 55, 64, 01, 02, 03, 04....

  4. Electronic applications presentation

    Science.gov (United States)

    Grants.gov requirement effective February 17, 2015. All initial applications submitted for competitiveawards based on solicitations issued on or after February 17, 2015 must be submitted to EPAelectronically through Grants.gov.

  5. Neutron sources and applications

    Energy Technology Data Exchange (ETDEWEB)

    Price, D.L. [ed.] [Argonne National Lab., IL (United States); Rush, J.J. [ed.] [National Inst. of Standards and Technology, Gaithersburg, MD (United States)

    1994-01-01

    Review of Neutron Sources and Applications was held at Oak Brook, Illinois, during September 8--10, 1992. This review involved some 70 national and international experts in different areas of neutron research, sources, and applications. Separate working groups were asked to (1) review the current status of advanced research reactors and spallation sources; and (2) provide an update on scientific, technological, and medical applications, including neutron scattering research in a number of disciplines, isotope production, materials irradiation, and other important uses of neutron sources such as materials analysis and fundamental neutron physics. This report summarizes the findings and conclusions of the different working groups involved in the review, and contains some of the best current expertise on neutron sources and applications.

  6. Applications of Clustering

    Indian Academy of Sciences (India)

    First page Back Continue Last page Overview Graphics. Applications of Clustering. Biology – medical imaging, bioinformatics, ecology, phylogenies problems etc. Market research. Data Mining. Social Networks. Any problem measuring similarity/correlation. (dimensions represent different parameters)

  7. Food Applications and Regulation

    Science.gov (United States)

    Gálvez, Antonio; Abriouel, Hikmate; Omar, Nabil Ben; Lucas, Rosario

    This chapter deals with food applications of bacteriocins. Regulatory issues on the different possibilities for incorporating bacteriocins as bioprotectants are discussed. Specific applications of bacteriocins or bacteriocin-producing strains are described for main food categories, including milk and dairy products, raw meats, ready-to-eat meat and poultry products, fermented meats, fish and fish products or fermented fish. The last section of the chapter deals with applications in foods and beverages derived from plant materials, such as raw vegetable foods, fruits and fruit juices, cooked food products, fermented vegetable foods and ­fermented beverages. Results obtained for application of bacteriocins in combination with other hurdles are also discussed for each specific case, with a special emphasis on novel food packaging and food-processing technologies, such as irradiation, pulsed electric field treatments or high hydrostatic pressure treatment.

  8. Neutron sources and applications

    International Nuclear Information System (INIS)

    Price, D.L.; Rush, J.J.

    1994-01-01

    Review of Neutron Sources and Applications was held at Oak Brook, Illinois, during September 8--10, 1992. This review involved some 70 national and international experts in different areas of neutron research, sources, and applications. Separate working groups were asked to (1) review the current status of advanced research reactors and spallation sources; and (2) provide an update on scientific, technological, and medical applications, including neutron scattering research in a number of disciplines, isotope production, materials irradiation, and other important uses of neutron sources such as materials analysis and fundamental neutron physics. This report summarizes the findings and conclusions of the different working groups involved in the review, and contains some of the best current expertise on neutron sources and applications

  9. Magnesium motorcycle applications

    International Nuclear Information System (INIS)

    Jianyong Cao; Zonghe Zhang; Dongxia Xiang; Jun Wang

    2005-01-01

    Magnesium, the lightest engineering structural metal, has been comprehensively used in castings of aviation and aerospace, communication and transportation, and IT components. This paper introduced the history, advantages and difficulties of magnesium castings for motorcycle application as well as its application state in China. It also indicated the production situation of magnesium motorcycle components in CQMST and difficulties need to overcome for further development. (orig.)

  10. Applications of Genetic Programming

    DEFF Research Database (Denmark)

    Gaunholt, Hans; Toma, Laura

    1996-01-01

    In this report a study of genetic programming (GP) has been performed with respect to a number of applications such as Symbolic function regression, Solving Symbolic Differential Equations, Image encoding, the ant problem etc.......In this report a study of genetic programming (GP) has been performed with respect to a number of applications such as Symbolic function regression, Solving Symbolic Differential Equations, Image encoding, the ant problem etc....

  11. Applications for alliform carbon

    Energy Technology Data Exchange (ETDEWEB)

    Gogotsi, Yury; Mochalin, Vadym; McDonough, IV, John Kenneth; Simon, Patrice; Taberna, Pierre Louis

    2017-02-21

    This invention relates to novel applications for alliform carbon, useful in conductors and energy storage devices, including electrical double layer capacitor devices and articles incorporating such conductors and devices. Said alliform carbon particles are in the range of 2 to about 20 percent by weight, relative to the weight of the entire electrode. Said novel applications include supercapacitors and associated electrode devices, batteries, bandages and wound healing, and thin-film devices, including display devices.

  12. Applications of neutron irradiation

    International Nuclear Information System (INIS)

    Ito, Yasuo

    1999-01-01

    The present state of art of applications of neutron irradiation is overviewed taking neutron activation analysis, prompt gamma-ray analysis, fission/alpha track methods, boron neutron capture therapy as examples. What is common among them is that the technologies are nearly matured for wide use by non- nuclear scientists. But the environment around research reactors is not prospective. These applications should be encouraged by incorporating in the neutron science society. (author)

  13. Superconductivity and their applications

    OpenAIRE

    Roque, António; Sousa, Duarte M.; Fernão Pires, Vítor; Margato, Elmano

    2017-01-01

    Trabalho apresentado em International Conference on Renewable Energies and Power Quality (ICREPQ’17), 4 a 6 de Abril de 2017, Málaga, Espanha The research in the field of superconductivity has led to the synthesis of superconducting materials with features that allow you to expand the applicability of this kind of materials. Among the superconducting materials characteristics, the critical temperature of the superconductor is framing the range and type of industrial applications that can b...

  14. Mobile Augmented Reality Applications

    OpenAIRE

    Prochazka, David; Stencl, Michael; Popelka, Ondrej; Stastny, Jiri

    2011-01-01

    Augmented reality have undergone considerable improvement in past years. Many special techniques and hardware devices were developed, but the crucial breakthrough came with the spread of intelligent mobile phones. This enabled mass spread of augmented reality applications. However mobile devices have limited hardware capabilities, which narrows down the methods usable for scene analysis. In this article we propose an augmented reality application which is using cloud computing to enable using...

  15. Modular Mobile Application Design

    OpenAIRE

    Jim Hahn; Nathaniel Ryckman

    2012-01-01

    This article describes the development of the Minrva library app for Android phones. The decisions to build a native application with Java and use a modular design are discussed. The application includes five modules: catalog search, in-building navigation, a barcode scanning feature, and up to date notifications of circulating technology availability. A sixth module, Amazon recommendations, that is not included in the version of the app that was released is also discussed. The article also r...

  16. Accounting Applications---Introduction

    OpenAIRE

    Joshua Ronen

    1980-01-01

    Introduction to special issue on accounting applications. By publishing these papers together in one issue of Management Science we wish to accomplish the dual purpose of exposing management scientists to the application of their discipline to important accounting problems and of allowing management scientists and accountants to interact in areas of research and problem-solving, thus stimulating the interest of readers who are concerned with the problems of accounting.

  17. Technological laser application

    International Nuclear Information System (INIS)

    Shia, D.O.; Kollen, R.; Rods, U.

    1980-01-01

    Problems of the technological applications of lasers are stated in the popular form. Main requirements to a technological laser as well as problems arising in designing any system using lasers have been considered. Areas of the laser applications are described generally: laser treatment of materials, thermal treatment, welding, broach and drilling of holes, scribing, microtreatment and adjustment of resistors, material cutting, investigations into controlled thermonuclear fussion

  18. Applications of Nuclear Physics

    OpenAIRE

    Hayes, Anna C.

    2017-01-01

    Today the applications of nuclear physics span a very broad range of topics and fields. This review discusses a number of aspects of these applications, including selected topics and concepts in nuclear reactor physics, nuclear fusion, nuclear non-proliferation, nuclear-geophysics, and nuclear medicine. The review begins with a historic summary of the early years in applied nuclear physics, with an emphasis on the huge developments that took place around the time of World War II, and that und...

  19. Particles beams and applications

    International Nuclear Information System (INIS)

    Uzureau, J.L.

    1996-01-01

    This issue of the ''Chocs'' journal is devoted to particles beams used by the D.A.M. (Direction of Military Applications) and to their applications. The concerned beams are limited to those in an energy range from hundred of Kev to several Gev. Light ions (protons, deuterons, alpha) where it is easy to produce neutrons sources and heavy ions (from carbon to gold). (N.C.). 8 refs., 2 figs

  20. Technology Applications Team: Applications of aerospace technology

    Science.gov (United States)

    1993-01-01

    Highlights of the Research Triangle Institute (RTI) Applications Team activities over the past quarter are presented in Section 1.0. The Team's progress in fulfilling the requirements of the contract is summarized in Section 2.0. In addition to our market-driven approach to applications project development, RTI has placed increased effort on activities to commercialize technologies developed at NASA Centers. These Technology Commercialization efforts are summarized in Section 3.0. New problem statements prepared by the Team in the reporting period are presented in Section 4.0. The Team's transfer activities for ongoing projects with the NASA Centers are presented in Section 5.0. Section 6.0 summarizes the status of four add-on tasks. Travel for the reporting period is described in Section 7.0. The RTI Team staff and consultants and their project responsibilities are listed in Appendix A. The authors gratefully acknowledge the contributions of many individuals to the RTI Technology Applications Team program. The time and effort contributed by managers, engineers, and scientists throughout NASA were essential to program success. Most important to the program has been a productive working relationship with the NASA Field Center Technology Utilization (TU) Offices. The RTI Team continues to strive for improved effectiveness as a resource to these offices. Industry managers, technical staff, medical researchers, and clinicians have been cooperative and open in their participation. The RTI Team looks forward to continuing expansion of its interaction with U.S. industry to facilitate the transfer of aerospace technology to the private sector.

  1. LCS Content Document Application

    Science.gov (United States)

    Hochstadt, Jake

    2011-01-01

    My project at KSC during my spring 2011 internship was to develop a Ruby on Rails application to manage Content Documents..A Content Document is a collection of documents and information that describes what software is installed on a Launch Control System Computer. It's important for us to make sure the tools we use everyday are secure, up-to-date, and properly licensed. Previously, keeping track of the information was done by Excel and Word files between different personnel. The goal of the new application is to be able to manage and access the Content Documents through a single database backed web application. Our LCS team will benefit greatly with this app. Admin's will be able to login securely to keep track and update the software installed on each computer in a timely manner. We also included exportability such as attaching additional documents that can be downloaded from the web application. The finished application will ease the process of managing Content Documents while streamlining the procedure. Ruby on Rails is a very powerful programming language and I am grateful to have the opportunity to build this application.

  2. Radioisotopes production and applications

    International Nuclear Information System (INIS)

    Dash, Ashutosh

    2015-01-01

    Application of radioisotopes for both medical and industrial applications constitutes one of the most important peaceful uses of atomic energy. The striking diffusion and the exciting perspective of radioisotope for a plethora of medical and industrial applications are mainly attributable to the penetrating and ionization properties of radiation emanating from radioisotopes. The revolutionary medical applications of radioisotopes for the diagnosis and treatment of a multitude of diseases are causing a rapid expansion of the nuclear medicine field. While the industrial uses of radioisotopes are not expanding as quickly, also require large amounts of radioisotopes. Production of radioisotopes is not only the first step, but also the most crucial for the success as well as sustainable growth of radioisotope applications. With the rapid growth and expanding areas of applications, the demands for isotopes have increased several folds. A number of radioisotopes of different physical half-life, energy of the particle or gamma emission, specific activity and chemistry are now regularly produced both at commercial centers as well as at selected nuclear science research institutes utilizing reactors and cyclotrons to meet the ever growing need

  3. PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Khairnar, A. G., E-mail: agkhairnar@gmail.com; Patil, V. S.; Agrawal, K. S.; Salunke, R. S.; Mahajan, A. M., E-mail: ammahajan@nmu.ac.in [North Maharashtra University, Department of Electronics, School of Physical Sciences (India)

    2017-01-15

    The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.

  4. Growth Related Carrier Mobility Enhancement of Pentacene Thin-Film Transistors with High-k Oxide Gate Dielectric

    International Nuclear Information System (INIS)

    Ai-Fang, Yu; Qiong, Qi; Peng, Jiang; Chao, Jiang

    2009-01-01

    Carrier mobility enhancement from 0.09 to 0.59 cm 2 /Vs is achieved for pentacene-based thin-film transistors (TFTs) by modifying the HfO 2 gate dielectric with a polystyrene (PS) thin film. The improvement of the transistor's performance is found to be strongly related to the initial film morphologies of pentacene on the dielectrics. In contrast to the three-dimensional island-like growth mode on the HfO 2 surface, the Stranski-Krastanov growth mode on the smooth and nonpolar PS/HfO 2 surface is believed to be the origin of the excellent carrier mobility of the TFTs. A large well-connected first monolayer with fewer boundaries is formed via the Stranski–Krastanov growth mode, which facilitates a charge transport parallel to the substrate and promotes higher carrier mobility. (cross-disciplinary physics and related areas of science and technology)

  5. Deposition temperature effect on electrical properties and interface of high-k ZrO{sub 2} capacitor

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Joo-Hyung; Ignatova, Velislava A [Fraunhofer Institute, Center of Nanoelectronic Technologies (CNT), Koenigsbruecker Str., 01099 Dresden (Germany); Heitmann, Johannes; Oberbeck, Lars [Qimonda Dresden GmbH and Co. OHG, Koenigsbruecker Str. 180, 01099 Dresden (Germany)], E-mail: joo-hyung.kim@inha.ac.kr

    2008-09-07

    The electrical characteristics, i.e. leakage current and capacitance, of ZrO{sub 2} based metal-insulator-metal structures, grown at 225, 250 and 275 deg, C by atomic layer deposition, were studied. The lowest leakage current was obtained at 250 deg. C deposition temperature, while the highest dielectric constant (k {approx} 43) was measured for the samples grown at 275 {sup 0}C, most probably due to the formation of tetragonal/cubic phases in the ZrO{sub 2} layer. We have shown that the main leakage current of these ZrO{sub 2} capacitors is governed by the Poole-Frenkel conduction mechanism. It was observed by x-ray photoelectron spectroscopy depth profiling that at 275 {sup 0}C deposition temperature the oxygen content at and beyond the ZrO{sub 2}/TiN interface is higher than at lower deposition temperatures, most probably due to oxygen inter-diffusion towards the electrode layer, forming a mixed TiN-TiO{sub x}N{sub y} interface layer. At and above 275 deg. C the ZrO{sub 2} layer changes its structure and becomes crystalline as proven by XRD analysis. (fast track communication)

  6. A simulation-based proposed high-k heterostructure AlGaAs/Si junctionless n-type tunnel FET

    International Nuclear Information System (INIS)

    Rahi Shiromani Balmukund; Asthana Pranav; Ghosh Bahniman

    2014-01-01

    We propose a heterostructure junctionless tunnel field effect transistor (HJL-TFET) using AlGaAs/Si. In the proposed HJL-TFET, low band gap silicon is used in the source side and higher band gap AlGaAs in the drain side. The whole AlGaAs/Si region is heavily doped n-type. The proposed HJL-TFET uses two isolated gates (named gate, gate1) with two different work functions (gate = 4.2 eV, gate1 = 5.2 eV respectively). The 2-D nature of HJL-TFET current flow is studied. The proposed structure is simulated in Silvaco with different gate dielectric materials. This structure exhibits a high on current in the range of 1.4 × 10 −6 A/μm, the off current remains as low as 9.1 × 10 −14 A/μm. So I ON /I OFF ratio of ≃ 10 8 is achieved. Point subthreshold swing has also been reduced to a value of ≃ 41 mV/decade for TiO 2 gate material. (semiconductor devices)

  7. The inhibitory effect of tiamulin on high K(+)-induced contraction in guinea pig intestinal smooth muscle.

    Science.gov (United States)

    Nakajyo, S; Fukui, T; Hara, Y; Shimizu, K; Urakawa, N

    1991-12-01

    Tiamulin with an IC50 of 1.7 x 10(-6) M inhibited both the rapid and sustained contractions induced by hyperosmotically added 60 mM K+ (Hyper 60 K+) without changing the membrane potential in the intestinal muscle. Tiamulin inhibition (2 x 10(-6)-2 x 10(-5) M) of the Ca(2+)-induced contraction in depolarized muscle was competitively antagonized by raising external Ca2+. Tiamulin (2 x 10(-5) M) slightly affected the Hyper 60 K(+)-induced phasic contraction under hypoxia and the carbachol-induced phasic contraction. Moreover, tiamulin (2 x 10(-5) M) inhibited the Hyper 60 K(+)-induced contraction with decreasing [Ca2+]cyt level. Although the inhibitory effect of 10(-7)-10(-5) M monesin, an inhibitor of mitochondrial respiration, on the Hyper 60 K(+)-induced contraction was reduced under hypoxia, the effect of tiamulin (2 x 10(-7)-2 x 10(-4) M) was not modified. Tiamulin changed neither the intracellular Na+ and K+ content of the depolarized muscle nor the Ca(2+)-induced contraction in the chemically skinned preparations. These results suggest that the inhibitory action of tiamulin on the Hyper 60 K(+)-induced tonic contraction is possibly due to the competitive inhibition of Ca2+ entry through the voltage-dependent Ca2+ channel of the intestinal smooth muscle cell.

  8. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  9. Silicate formation at the interface of Pr-oxide as a high-K dielectric and Si(001) surfaces

    International Nuclear Information System (INIS)

    Schmeisser, D.; Zheng, F.; Perez-Dieste, V.; Himpsel, F.J.; LoNigro, R.; Toro, R.G.; Malandrino, G.; Fragala, I.L.

    2006-01-01

    The composition and chemical bonding of the first atoms across the interface between Si(001) and the dielectric determine the quality of dielectric gate stacks. An analysis of that hidden interface is a challenge as it requires both, high sensitivity and elemental and chemical state information. We used X-ray absorption spectroscopy in total electron yield and total fluorescence yield at the Si2p and the O1s edges to address that issue. We report on results of Pr 2 O 3 /Si(001) as prepared by both, epitaxial growth and metal organic chemical vapor deposition (MOCVD), and compare to the SiO 2 /Si(001) system as a reference. We find evidence for the silicate formation at the interface as derived from the characteristic features at the Si2p and the O1s edges. The results are in line with model experiments in which films of increasing film thickness are deposited in situ on bare Si(001) surfaces

  10. The influence of carbon doping on the performance of Gd2O3 as high-k gate dielectric

    International Nuclear Information System (INIS)

    Shekhter, P.; Yehezkel, S.; Shriki, A.; Eizenberg, M.; Chaudhuri, A. R.; Osten, H. J.; Laha, A.

    2014-01-01

    One of the approaches for overcoming the issue of leakage current in modern metal-oxide-semiconductor devices is utilizing the high dielectric constants of lanthanide based oxides. We investigated the effect of carbon doping directly into Gd 2 O 3 layers on the performance of such devices. It was found that the amount of carbon introduced into the dielectric is above the solubility limit; carbon atoms enrich the oxide-semiconductor interface and cause a significant shift in the flat band voltage of the stack. Although the carbon atoms slightly degrade this interface, this method has a potential for tuning the flat band voltage of such structures

  11. High-k dielectric composites of poly(2-cyanoethyl vinyl ether) and barium titanate for flexible electronics

    Czech Academy of Sciences Publication Activity Database

    Piana, Francesco; Pfleger, Jiří; Jambor, R.; Řičica, T.; Macák, J. M.

    2017-01-01

    Roč. 134, č. 37 (2017), s. 1-10, č. článku 45236. ISSN 0021-8995 R&D Projects: GA TA ČR(CZ) TE01020022; GA MŠk(CZ) LO1507 Institutional support: RVO:61389013 Keywords : composites * dielectric properties * nanocrystals Subject RIV: CG - Electrochemistry OBOR OECD: Electrochemistry (dry cells, batteries, fuel cells, corrosion metals, electrolysis) Impact factor: 1.860, year: 2016

  12. Change in carrier type in high-k gate carbon nanotube field-effect transistors by interface fixed charges

    International Nuclear Information System (INIS)

    Moriyama, N; Ohno, Y; Kitamura, T; Kishimoto, S; Mizutani, T

    2010-01-01

    We study the phenomenon of change in carrier type in carbon nanotube field-effect transistors (CNFETs) caused by the atomic layer deposition (ALD) of a HfO 2 gate insulator. When a HfO 2 layer is deposited on a CNFET, the type of carrier changes from p-type to n-type. The so-obtained n-type device has good performance and stability in air. The conductivity of such a device with a channel length of 0.7 μm is 11% of the quantum conductance 4e 2 /h. The contact resistance for electron current is estimated to be 14 kΩ. The n-type conduction of this CNFET is maintained for more than 100 days. The change in carrier type is attributed to positive fixed charges introduced at the interface between the HfO 2 and SiO 2 layers. We also propose a novel technique to control the type of conduction by utilizing interface fixed charges; this technique is compatible with Si CMOS process technology.

  13. Targeted recombinant fusion proteins of IFNγ and mimetic IFNγ with PDGFβR bicyclic peptide inhibits liver fibrogenesis in vivo.

    Directory of Open Access Journals (Sweden)

    Ruchi Bansal

    Full Text Available Hepatic stellate cells (HSCs, following transdifferentiation to myofibroblasts plays a key role in liver fibrosis. Therefore, attempts to attenuate this myofibroblastic phenotype would be a promising therapeutic approach. Interferon gamma (IFNγ is a potent anti-fibrotic cytokine, but its pleiotropic receptor expression leading to severe adverse effects has limited its clinical application. Since, activated HSC express high-level of platelet derived growth factor beta receptor (PDGFβR, we investigated the potential of PDGFβR-specific targeting of IFNγ and its signaling peptide that lacks IFNγR binding site (mimetic IFNγ or mimIFNγ in liver fibrosis. We prepared DNA constructs expressing IFNγ, mimIFNγ or BiPPB (PDGFβR-specific bicyclic peptide-IFNγ, BiPPB-mimIFNγ fusion proteins. Both chimeric proteins alongwith IFNγ and mimIFNγ were produced in E.coli. The expressed proteins were purified and analyzed for PDGFβR-specific binding and in vitro effects. Subsequently, these recombinant proteins were investigated for the liver uptake (pSTAT1α signaling pathway, for anti-fibrotic effects and adverse effects (platelet counts in CCl4-induced liver fibrogenesis in mice. The purified HSC-targeted IFNγ and mimIFNγ fusion proteins showed PDGFβR-specific binding and significantly reduced TGFβ-induced collagen-I expression in human HSC (LX2 cells, while mouse IFNγ and mimIFNγ did not show any effect. Conversely, mouse IFNγ and BiPPB-IFNγ induced activation and dose-dependent nitric oxide release in mouse macrophages (express IFNγR while lack PDGFβR, which was not observed with mimIFNγ and BiPPB-mimIFNγ, due to the lack of IFNγR binding sites. In vivo, targeted BiPPB-IFNγ and BiPPB-mimIFNγ significantly activated intrahepatic IFNγ-signaling pathway compared to IFNγ and mimIFNγ suggesting increased liver accumulation. Furthermore, the targeted fusion proteins ameliorated liver fibrogenesis in mice by significantly reducing

  14. Automated Inadvertent Intruder Application

    International Nuclear Information System (INIS)

    Koffman, Larry D.; Lee, Patricia L.; Cook, James R.; Wilhite, Elmer L.

    2008-01-01

    The Environmental Analysis and Performance Modeling group of Savannah River National Laboratory (SRNL) conducts performance assessments of the Savannah River Site (SRS) low-level waste facilities to meet the requirements of DOE Order 435.1. These performance assessments, which result in limits on the amounts of radiological substances that can be placed in the waste disposal facilities, consider numerous potential exposure pathways that could occur in the future. One set of exposure scenarios, known as inadvertent intruder analysis, considers the impact on hypothetical individuals who are assumed to inadvertently intrude onto the waste disposal site. Inadvertent intruder analysis considers three distinct scenarios for exposure referred to as the agriculture scenario, the resident scenario, and the post-drilling scenario. Each of these scenarios has specific exposure pathways that contribute to the overall dose for the scenario. For the inadvertent intruder analysis, the calculation of dose for the exposure pathways is a relatively straightforward algebraic calculation that utilizes dose conversion factors. Prior to 2004, these calculations were performed using an Excel spreadsheet. However, design checks of the spreadsheet calculations revealed that errors could be introduced inadvertently when copying spreadsheet formulas cell by cell and finding these errors was tedious and time consuming. This weakness led to the specification of functional requirements to create a software application that would automate the calculations for inadvertent intruder analysis using a controlled source of input parameters. This software application, named the Automated Inadvertent Intruder Application, has undergone rigorous testing of the internal calculations and meets software QA requirements. The Automated Inadvertent Intruder Application was intended to replace the previous spreadsheet analyses with an automated application that was verified to produce the same calculations and

  15. Computer Applications in Educational Audiology.

    Science.gov (United States)

    Mendel, Lisa Lucks; And Others

    1995-01-01

    This article provides an overview of how computer technologies can be used by educational audiologists. Computer technologies are classified into three categories: (1) information systems applications; (2) screening and diagnostic applications; and (3) intervention applications. (Author/DB)

  16. Quality attributes for mobile applications

    OpenAIRE

    Fernandes, João M.; Ferreira, André Leite

    2016-01-01

    A mobile application is a type of software application developed to run on a mobile device. The chapter discusses the main characteristics of mobile devices, since they have a great impact on mobile applications. It also presents the classification of mobile applications according to two main types: native and web-based applications. Finally, this chapter identifies the most relevant types of quality attributes for mobile applications. It shows that the relevant quality attributes for mobile ...

  17. Retirement Applicant Satisfaction Survey Results

    Data.gov (United States)

    Social Security Administration — This dataset contains information about the Retirement Applicant Survey (RAS). The survey measured satisfaction results with the retirement application process. The...

  18. Applications of Cell Microencapsulation.

    Science.gov (United States)

    Opara, Emmanuel C

    2017-01-01

    The goal of this chapter is to provide an overview of the different purposes for which the cell microencapsulation technology can be used. These include immunoisolation of non-autologous cells used for cell therapy; immobilization of cells for localized (targeted) delivery of therapeutic products to ablate, repair, or regenerate tissue; simultaneous delivery of multiple therapeutic agents in cell therapy; spatial compartmentalization of cells in complex tissue engineering; expansion of cells in culture; and production of different probiotics and metabolites for industrial applications. For each of these applications, specific examples are provided to illustrate how the microencapsulation technology can be utilized to achieve the purpose. However, successful use of the cell microencapsulation technology for whatever purpose will ultimately depend upon careful consideration for the choice of the encapsulating polymers, the method of fabrication (cross-linking) of the microbeads, which affects the permselectivity, the biocompatibility and the mechanical strength of the microbeads as well as environmental parameters such as temperature, humidity, osmotic pressure, and storage solutions.The various applications discussed in this chapter are illustrated in the different chapters of this book and where appropriate relevant images of the microencapsulation products are provided. It is hoped that this outline of the different applications of cell microencapsulation would provide a good platform for tissue engineers, scientists, and clinicians to design novel tissue constructs and products for therapeutic and industrial applications.

  19. Nonlinear Optics and Applications

    Science.gov (United States)

    Abdeldayem, Hossin A. (Editor); Frazier, Donald O. (Editor)

    2007-01-01

    Nonlinear optics is the result of laser beam interaction with materials and started with the advent of lasers in the early 1960s. The field is growing daily and plays a major role in emerging photonic technology. Nonlinear optics play a major role in many of the optical applications such as optical signal processing, optical computers, ultrafast switches, ultra-short pulsed lasers, sensors, laser amplifiers, and many others. This special review volume on Nonlinear Optics and Applications is intended for those who want to be aware of the most recent technology. This book presents a survey of the recent advances of nonlinear optical applications. Emphasis will be on novel devices and materials, switching technology, optical computing, and important experimental results. Recent developments in topics which are of historical interest to researchers, and in the same time of potential use in the fields of all-optical communication and computing technologies, are also included. Additionally, a few new related topics which might provoke discussion are presented. The book includes chapters on nonlinear optics and applications; the nonlinear Schrodinger and associated equations that model spatio-temporal propagation; the supercontinuum light source; wideband ultrashort pulse fiber laser sources; lattice fabrication as well as their linear and nonlinear light guiding properties; the second-order EO effect (Pockels), the third-order (Kerr) and thermo-optical effects in optical waveguides and their applications in optical communication; and, the effect of magnetic field and its role in nonlinear optics, among other chapters.

  20. Practical applications of phosphors

    CERN Document Server

    Yen, William M; Yamamoto, Hajime

    2006-01-01

    Drawn from the second edition of the best-selling Phosphor Handbook, Practical Applications of Phosphors outlines methods for the production of various phosphors and discusses a broad spectrum of applications. Beginning with methods for synthesis and related technologies, the book sets the stage by classifying and then explaining practical phosphors according to usage. It describes the operating principle and structure of phosphor devices and the phosphor characteristics required for a given device, then covers the manufacturing processes and characteristics of phosphors. The book discusses research and development currently under way on phosphors with potential for practical usage and touches briefly on phosphors that have played a historical role, but are no longer of practical use. It provides a comprehensive treatment of applications including lamps and cathode-ray tubes, x-ray and ionizing radiation, and for vacuum fluorescent and field emission displays and covers inorganic and organic electroluminescen...

  1. Radioisotope applications in industry

    International Nuclear Information System (INIS)

    Frevert, E.

    1983-03-01

    The practical applications of the isotope technique are reported and illustrated by examples of works of the Department of Isotope Application of the Austrian Research Centre Seibersdorf. First the field of process controlling device and controll is described, including thickness, density and moisture gauging, the estimation of coatings and material compounds, the location of material defects and the level control. After this a detailed description of all kinds of tracer investigations is given like measurements of flow rate, intermixture, distribution and volume, investigations of corrosion, wear and lubrication and locations of all kind. A short description of gas ionisation, sources of light and isotope batteries is mentioned. Finally a general view of the applications in the fields of chemistry, biology, agriculture and medicine and the most important of the Austrian law of protective screen and its enactment are given. (Author) [de

  2. Lie algebras and applications

    CERN Document Server

    Iachello, Francesco

    2015-01-01

    This course-based primer provides an introduction to Lie algebras and some of their applications to the spectroscopy of molecules, atoms, nuclei and hadrons. In the first part, it concisely presents the basic concepts of Lie algebras, their representations and their invariants. The second part includes a description of how Lie algebras are used in practice in the treatment of bosonic and fermionic systems. Physical applications considered include rotations and vibrations of molecules (vibron model), collective modes in nuclei (interacting boson model), the atomic shell model, the nuclear shell model, and the quark model of hadrons. One of the key concepts in the application of Lie algebraic methods in physics, that of spectrum generating algebras and their associated dynamic symmetries, is also discussed. The book highlights a number of examples that help to illustrate the abstract algebraic definitions and includes a summary of many formulas of practical interest, such as the eigenvalues of Casimir operators...

  3. Discrete mathematics with applications

    CERN Document Server

    Koshy, Thomas

    2003-01-01

    This approachable text studies discrete objects and the relationsips that bind them. It helps students understand and apply the power of discrete math to digital computer systems and other modern applications. It provides excellent preparation for courses in linear algebra, number theory, and modern/abstract algebra and for computer science courses in data structures, algorithms, programming languages, compilers, databases, and computation.* Covers all recommended topics in a self-contained, comprehensive, and understandable format for students and new professionals * Emphasizes problem-solving techniques, pattern recognition, conjecturing, induction, applications of varying nature, proof techniques, algorithm development and correctness, and numeric computations* Weaves numerous applications into the text* Helps students learn by doing with a wealth of examples and exercises: - 560 examples worked out in detail - More than 3,700 exercises - More than 150 computer assignments - More than 600 writing projects*...

  4. Applications of stable isotopes

    International Nuclear Information System (INIS)

    Gregg, C.T.

    1977-01-01

    Clinical applications include the galactose breath test which consists of oral administration of 13 C-labeled galactose and measurement of the 13 C content of respired CO 2 as a function of time in patients with cirrhotic livers for diagnosis of liver dysfunction. Another application was the breath test to study glucose metabolism in children. Respired 13 CO 2 from ingested glucose- 13 C was measured for normal and diabetic children. Studies on mice in which 60 percent of the body carbon was replaced with 13 C failed to show significant effects of the isotope. Studies on biochemical applications include nuclear magnetic resonance studies of 13 C-labeled amino acids from Chlorella pyrenoidosa; studies on 15 N nmr spectra of arginine-guanidino- 13 C-2,3-- 15 N 2 as a function of pH; and isolation of fatty acids from algae

  5. Elasticity theory and applications

    CERN Document Server

    Saada, Adel S; Hartnett, James P; Hughes, William F

    2013-01-01

    Elasticity: Theory and Applications reviews the theory and applications of elasticity. The book is divided into three parts. The first part is concerned with the kinematics of continuous media; the second part focuses on the analysis of stress; and the third part considers the theory of elasticity and its applications to engineering problems. This book consists of 18 chapters; the first of which deals with the kinematics of continuous media. The basic definitions and the operations of matrix algebra are presented in the next chapter, followed by a discussion on the linear transformation of points. The study of finite and linear strains gradually introduces the reader to the tensor concept. Orthogonal curvilinear coordinates are examined in detail, along with the similarities between stress and strain. The chapters that follow cover torsion; the three-dimensional theory of linear elasticity and the requirements for the solution of elasticity problems; the method of potentials; and topics related to cylinders, ...

  6. Functional analysis and applications

    CERN Document Server

    Siddiqi, Abul Hasan

    2018-01-01

    This self-contained textbook discusses all major topics in functional analysis. Combining classical materials with new methods, it supplies numerous relevant solved examples and problems and discusses the applications of functional analysis in diverse fields. The book is unique in its scope, and a variety of applications of functional analysis and operator-theoretic methods are devoted to each area of application. Each chapter includes a set of problems, some of which are routine and elementary, and some of which are more advanced. The book is primarily intended as a textbook for graduate and advanced undergraduate students in applied mathematics and engineering. It offers several attractive features making it ideally suited for courses on functional analysis intended to provide a basic introduction to the subject and the impact of functional analysis on applied and computational mathematics, nonlinear functional analysis and optimization. It introduces emerging topics like wavelets, Gabor system, inverse pro...

  7. Superconductivity: materials and applications

    International Nuclear Information System (INIS)

    Duchateau, J.L.; Kircher, F.; Leveque, J.; Tixador, P.

    2008-01-01

    This digest paper presents the different types of superconducting materials: 1 - the low-TC superconductors: the multi-filament composite as elementary constituent, the world production of NbTi, the superconducting cables of the LHC collider and of the ITER tokamak; 2 - the high-TC superconductors: BiSrCaCuO (PIT 1G) ribbons and wires, deposited coatings; 3 - application to particle physics: the the LHC collider of the CERN, the LHC detectors; 4 - applications to thermonuclear fusion: Tore Supra and ITER tokamaks; 5 - NMR imaging: properties of superconducting magnets; 6 - applications in electrotechnics: cables, motors and alternators, current limiters, transformers, superconducting energy storage systems (SMES). (J.S.)

  8. Applications of interval computations

    CERN Document Server

    Kreinovich, Vladik

    1996-01-01

    Primary Audience for the Book • Specialists in numerical computations who are interested in algorithms with automatic result verification. • Engineers, scientists, and practitioners who desire results with automatic verification and who would therefore benefit from the experience of suc­ cessful applications. • Students in applied mathematics and computer science who want to learn these methods. Goal Of the Book This book contains surveys of applications of interval computations, i. e. , appli­ cations of numerical methods with automatic result verification, that were pre­ sented at an international workshop on the subject in EI Paso, Texas, February 23-25, 1995. The purpose of this book is to disseminate detailed and surveyed information about existing and potential applications of this new growing field. Brief Description of the Papers At the most fundamental level, interval arithmetic operations work with sets: The result of a single arithmetic operation is the set of all possible results as the o...

  9. Applications of photovoltaics

    International Nuclear Information System (INIS)

    Pearsall, N.

    1999-01-01

    The author points out that although photovoltaics can be used for generating electricity for the same applications as many other means of generation, they really come into their own where disadvantages associated with an intermittent unpredictable supply are not severe. The paper discusses the advantages and disadvantages to be taken into account when considering a photovoltaic power system. Five main applications, based on the system features, are listed and explained. They are: consumer, professional, rural electrification, building-integrated, centralised grid connected and space power. A brief history of the applications of photovoltaics is presented with statistical data on the growth of installed capacity since 1992. The developing market for photovoltaics is discussed together with how environmental issues have become a driver for development of building-integrated photovoltaics

  10. Optimized packings with applications

    CERN Document Server

    Pintér, János

    2015-01-01

    This volume presents a selection of case studies that address a substantial range of optimized object packings (OOP) and their applications. The contributing authors are well-recognized researchers and practitioners. The mathematical modelling and numerical solution aspects of each application case study are presented in sufficient detail. A broad range of OOP problems are discussed: these include various specific and non-standard container loading and object packing problems, as well as the stowing of hazardous and other materials on container ships, data centre resource management, automotive engineering design, space station logistic support, cutting and packing problems with placement constraints, the optimal design of LED street lighting, robust sensor deployment strategies, spatial scheduling problems, and graph coloring models and metaheuristics for packing applications. Novel points of view related to model development and to computational nonlinear, global, mixed integer optimization and heuristic st...

  11. Engineering Web Applications

    DEFF Research Database (Denmark)

    Casteleyn, Sven; Daniel, Florian; Dolog, Peter

    Nowadays, Web applications are almost omnipresent. The Web has become a platform not only for information delivery, but also for eCommerce systems, social networks, mobile services, and distributed learning environments. Engineering Web applications involves many intrinsic challenges due...... to their distributed nature, content orientation, and the requirement to make them available to a wide spectrum of users who are unknown in advance. The authors discuss these challenges in the context of well-established engineering processes, covering the whole product lifecycle from requirements engineering through...... design and implementation to deployment and maintenance. They stress the importance of models in Web application development, and they compare well-known Web-specific development processes like WebML, WSDM and OOHDM to traditional software development approaches like the waterfall model and the spiral...

  12. Plasmonics theory and applications

    CERN Document Server

    Shahbazyan, Tigran V

    2014-01-01

    This contributed volume summarizes recent theoretical developments in plasmonics and its applications in physics, chemistry, materials science, engineering, and medicine. It focuses on recent advances in several major areas of plasmonics including plasmon-enhanced spectroscopies, light scattering, many-body effects, nonlinear optics, and ultrafast dynamics. The theoretical and computational methods used in these investigations include electromagnetic calculations, density functional theory calculations, and nonequilibrium electron dynamics calculations. The book presents a comprehensive overview of these methods as well as their applications to various current problems of interest.

  13. Pump characteristics and applications

    CERN Document Server

    Volk, Michael

    2013-01-01

    Providing a wealth of information on pumps and pump systems, Pump Characteristics and Applications, Third Edition details how pump equipment is selected, sized, operated, maintained, and repaired. The book identifies the key components of pumps and pump accessories, introduces the basics of pump and system hydraulics as well as more advanced hydraulic topics, and details various pump types, as well as special materials on seals, motors, variable frequency drives, and other pump-related subjects. It uses example problems throughout the text, reinforcing the practical application of the formulae

  14. Application of stepping motor

    International Nuclear Information System (INIS)

    1980-10-01

    This book is divided into three parts, which is about practical using of stepping motor. The first part has six chapters. The contents of the first part are about stepping motor, classification of stepping motor, basic theory og stepping motor, characteristic and basic words, types and characteristic of stepping motor in hybrid type and basic control of stepping motor. The second part deals with application of stepping motor with hardware of stepping motor control, stepping motor control by microcomputer and software of stepping motor control. The last part mentions choice of stepping motor system, examples of stepping motor, measurement of stepping motor and practical cases of application of stepping motor.

  15. Experimental approaches and applications

    CERN Document Server

    Crasemann, Bernd

    1975-01-01

    Atomic Inner-Shell Processes, Volume II: Experimental Approaches and Applications focuses on the physics of atomic inner shells, with emphasis on experimental aspects including the use of radioactive atoms for studies of atomic transition probabilities. Surveys of modern techniques of electron and photon spectrometry are also presented, and selected practical applications of inner-shell processes are outlined. Comprised of six chapters, this volume begins with an overview of the general principles underlying the experimental techniques that make use of radioactive isotopes for inner-sh

  16. Superconductors and their applications

    Energy Technology Data Exchange (ETDEWEB)

    Fahlenbrach, H

    1976-05-01

    A brief introduction is given to the physics and technology of superconductivity, covering the proposed application of V/sub 3/Ga and Nb/sub 3/Sn which have a Tc at 20K and of Nb/sub 3/Ge (in thin layers) with a Tc of up to 23K. A table is given of the latest materials with Tc values around 11K, and high Hc values (up to 440 kA/cm), all based on molybdenum compounds. A brief discussion of practical applications includes a Hover vehicle with linear motor propulsion and low current usage in measuring and computing devices based on the Josephson effect.

  17. Medical applications of accelerators

    CERN Document Server

    Rossi, Sandro

    1998-01-01

    At Present, about five thousands accelerators are devoted to biomedical applications. They are mainly used in radiotherapy, research and medical radioisotopes production. In this framework oncological hadron-therapy deserves particular attention since it represents a field in rapid evolution thanks to the joint efforts of laboratories with long experiences in particle physics. It is the case of CERN where the design of an optimised synchrotron for medical applications has been pursued. These lectures present these activities with particular attention to the new developments which are scientifically interesting and/or economically promising.

  18. Gas solubilities widespread applications

    CERN Document Server

    Gerrard, William

    1980-01-01

    Gas Solubilities: Widespread Applications discusses several topics concerning the various applications of gas solubilities. The first chapter of the book reviews Henr's law, while the second chapter covers the effect of temperature on gas solubility. The third chapter discusses the various gases used by Horiuti, and the following chapters evaluate the data on sulfur dioxide, chlorine data, and solubility data for hydrogen sulfide. Chapter 7 concerns itself with solubility of radon, thoron, and actinon. Chapter 8 tackles the solubilities of diborane and the gaseous hydrides of groups IV, V, and

  19. Medical applications of cyclotrons

    International Nuclear Information System (INIS)

    Jean, R.; Fauchet, M.

    1978-01-01

    Isochronous cyclotrons used to accelerate different charged particles (protons, deuterons, alphas...) at variable energies, have important medical applications, for neutron teletherapy, in vivo or in vitro activation analysis or production of short-lived radioisotopes for nuclear medicine. The characteristics of the cyclotron presently available are described for these three applications (low energy 'compact' cyclotrons, cyclotrons of intermediate and high energies), and their advantages are discussed from the points of view of the medical requirements, the financial investments and the results obtained. (orig.) [de

  20. Modular Mobile Application Design

    Directory of Open Access Journals (Sweden)

    Jim Hahn

    2012-10-01

    Full Text Available This article describes the development of the Minrva library app for Android phones. The decisions to build a native application with Java and use a modular design are discussed. The application includes five modules: catalog search, in-building navigation, a barcode scanning feature, and up to date notifications of circulating technology availability. A sixth module, Amazon recommendations, that is not included in the version of the app that was released is also discussed. The article also reports on the findings of two rounds of usability testing and the plans for future development of the app.

  1. Location Based Application Availability

    Science.gov (United States)

    Naeem Akram, Raja; Markantonakis, Konstantinos; Mayes, Keith

    Smart cards are being integrated into a diverse range of industries: ranging from banking, telecom, transport, home/office access control to health and E-passport. Traditionally, cardholders are required to carry a smart card for each application. However, recent developments in the Near Field Communication (NFC) have renewed the interest in multiple applications for different services on a single device. This paper builds onto the NFC initiative and avoids the smart card ownership issues that hinder the adoption of such devices. The proposal integrates the Global Positioning System with the NFC in mobile phones to provide a ubiquitously and flexible service access model.

  2. Developing Web Applications

    CERN Document Server

    Moseley, Ralph

    2007-01-01

    Building applications for the Internet is a complex and fast-moving field which utilizes a variety of continually evolving technologies. Whether your perspective is from the client or server side, there are many languages to master - X(HTML), JavaScript, PHP, XML and CSS to name but a few. These languages have to work together cleanly, logically and in harmony with the systems they run on, and be compatible with any browsers with which they interact. Developing Web Applications presents script writing and good programming practice but also allows students to see how the individual technologi

  3. Optimization : insights and applications

    CERN Document Server

    Brinkhuis, Jan

    2005-01-01

    This self-contained textbook is an informal introduction to optimization through the use of numerous illustrations and applications. The focus is on analytically solving optimization problems with a finite number of continuous variables. In addition, the authors provide introductions to classical and modern numerical methods of optimization and to dynamic optimization. The book's overarching point is that most problems may be solved by the direct application of the theorems of Fermat, Lagrange, and Weierstrass. The authors show how the intuition for each of the theoretical results can be s

  4. Laravel application development blueprints

    CERN Document Server

    Kiliçdagi, Arda

    2013-01-01

    Follow along as we work together to build 10 different applications using Laravel 4. Since each chapter is devoted to the design of a different application, there is no need to read the book in any particular order. Instead, you can pick and choose the blueprints that are of most interest to you and dive right in.This book is for intermediate to advanced level PHP programmers who want to master Laravel. It's assumed that you will have some experience with PHP already. This book is also for those who are already using a different PHP framework and are looking for better solutions.

  5. Nanoelectronic device applications handbook

    CERN Document Server

    Morris, James E

    2013-01-01

    Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal-oxide-semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world.These include: Nanoscale advance

  6. Tunable laser applications

    CERN Document Server

    Duarte, FJ

    2008-01-01

    Introduction F. J. Duarte Spectroscopic Applications of Tunable Optical Parametric Oscillators B. J. Orr, R. T. White, and Y. He Solid-State Dye Lasers Costela, I. García-Moreno, and R. Sastre Tunable Lasers Based on Dye-Doped Polymer Gain Media Incorporating Homogeneous Distributions of Functional Nanoparticles F. J. Duarte and R. O. James Broadly Tunable External-Cavity Semiconductor Lasers F. J. Duarte Tunable Fiber Lasers T. M. Shay and F. J. Duarte Fiber Laser Overview and Medical Applications

  7. Cluster analysis for applications

    CERN Document Server

    Anderberg, Michael R

    1973-01-01

    Cluster Analysis for Applications deals with methods and various applications of cluster analysis. Topics covered range from variables and scales to measures of association among variables and among data units. Conceptual problems in cluster analysis are discussed, along with hierarchical and non-hierarchical clustering methods. The necessary elements of data analysis, statistics, cluster analysis, and computer implementation are integrated vertically to cover the complete path from raw data to a finished analysis.Comprised of 10 chapters, this book begins with an introduction to the subject o

  8. Mixtures Estimation and Applications

    CERN Document Server

    Mengersen, Kerrie; Titterington, Mike

    2011-01-01

    This book uses the EM (expectation maximization) algorithm to simultaneously estimate the missing data and unknown parameter(s) associated with a data set. The parameters describe the component distributions of the mixture; the distributions may be continuous or discrete. The editors provide a complete account of the applications, mathematical structure and statistical analysis of finite mixture distributions along with MCMC computational methods, together with a range of detailed discussions covering the applications of the methods and features chapters from the leading experts on the subject

  9. An improved pseudotargeted metabolomics approach using multiple ion monitoring with time-staggered ion lists based on ultra-high performance liquid chromatography/quadrupole time-of-flight mass spectrometry.

    Science.gov (United States)

    Wang, Yang; Liu, Fang; Li, Peng; He, Chengwei; Wang, Ruibing; Su, Huanxing; Wan, Jian-Bo

    2016-07-13

    Pseudotargeted metabolomics is a novel strategy integrating the advantages of both untargeted and targeted methods. The conventional pseudotargeted metabolomics required two MS instruments, i.e., ultra-high performance liquid chromatography/quadrupole-time- of-flight mass spectrometry (UHPLC/Q-TOF MS) and UHPLC/triple quadrupole mass spectrometry (UHPLC/QQQ-MS), which makes method transformation inevitable. Furthermore, the picking of ion pairs from thousands of candidates and the swapping of the data between two instruments are the most labor-intensive steps, which greatly limit its application in metabolomic analysis. In the present study, we proposed an improved pseudotargeted metabolomics method that could be achieved on an UHPLC/Q-TOF/MS instrument operated in the multiple ion monitoring (MIM) mode with time-staggered ion lists (tsMIM). Full scan-based untargeted analysis was applied to extract the target ions. After peak alignment and ion fusion, a stepwise ion picking procedure was used to generate the ion lists for subsequent single MIM and tsMIM. The UHPLC/Q-TOF tsMIM MS-based pseudotargeted approach exhibited better repeatability and a wider linear range than the UHPLC/Q-TOF MS-based untargeted metabolomics method. Compared to the single MIM mode, the tsMIM significantly increased the coverage of the metabolites detected. The newly developed method was successfully applied to discover plasma biomarkers for alcohol-induced liver injury in mice, which indicated its practicability and great potential in future metabolomics studies. Copyright © 2016 Elsevier B.V. All rights reserved.

  10. Language Modelling for Collaborative Filtering: Application to Job Applicant Matching

    OpenAIRE

    Schmitt , Thomas; Gonard , François; Caillou , Philippe; Sebag , Michèle

    2017-01-01

    International audience; This paper addresses a collaborative retrieval problem , the recommendation of job ads to applicants. Specifically, two proprietary databases are considered. The first one focuses on the context of unskilled low-paid jobs/applicants; the second one focuses on highly qualified jobs/applicants. Each database includes the job ads and applicant resumes together with the collaborative filtering data recording the applicant clicks on job ads. The proposed approach, called LA...

  11. Distributed Parameter Modelling Applications

    DEFF Research Database (Denmark)

    Sales-Cruz, Mauricio; Cameron, Ian; Gani, Rafiqul

    2011-01-01

    and the development of a short-path evaporator. The oil shale processing problem illustrates the interplay amongst particle flows in rotating drums, heat and mass transfer between solid and gas phases. The industrial application considers the dynamics of an Alberta-Taciuk processor, commonly used in shale oil and oil...... the steady state, distributed behaviour of a short-path evaporator....

  12. Forensic Applications of LIBS

    Science.gov (United States)

    Hark, Richard R.; East, Lucille J.

    Forensic science is broadly defined as the application of science to matters of the law. Practitioners typically use multidisciplinary scientific techniques for the analysis of physical evidence in an attempt to establish or exclude an association between a suspect and the scene of a crime.

  13. Beaming teaching application

    DEFF Research Database (Denmark)

    Markovic, Milos; Madsen, Esben; Olesen, Søren Krarup

    2012-01-01

    BEAMING is a telepresence research project aiming at providing a multimodal interaction between two or more participants located at distant locations. One of the BEAMING applications allows a distant teacher to give a xylophone playing lecture to the students. Therefore, rendering of the xylophon...

  14. Medical applications of colloids

    CERN Document Server

    Matijevic, Egon

    2008-01-01

    The first book of its type on the medical and biomedical applications of colloids, although there are some related titles on different topicsDiscusses the effects of uniform particles in drug formulations and releaseEvaluates particle transport and deposition in the human body.

  15. Permit application modifications

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1995-11-01

    This document contains the Permit Application Modifications for the Y-12 Industrial Landfill V site on the Oak Ridge Reservation. These modifications include the assessment of stability of the proposed Landfill V under static and loading conditions. Analyses performed include the general slope stability, veneer stability of the bottom liner and cover system, and a liquefaction potential assessment of the foundation soils.

  16. Applications Using AIRS Data

    Science.gov (United States)

    Ray, S. E.; Pagano, T. S.; Fetzer, E. J.; Lambrigtsen, B.; Olsen, E. T.; Teixeira, J.; Licata, S. J.; Hall, J. R.; Thompson, C. K.

    2015-12-01

    The Atmospheric Infrared Sounder (AIRS) on NASA's Aqua spacecraft has been returning daily global observations of Earth's atmospheric constituents and properties since 2002. With a 12-year data record and daily, global observations in near real-time, AIRS data can play a role in applications that fall under many of the NASA Applied Sciences focus areas. For vector-borne disease, research is underway using AIRS near surface retrievals to assess outbreak risk, mosquito incubation periods and epidemic potential for dengue fever, malaria, and West Nile virus. For drought applications, AIRS temperature and humidity data are being used in the development of new drought indicators and improvement in the understanding of drought development. For volcanic hazards, new algorithms using AIRS data are in development to improve the reporting of sulfur dioxide concentration, the burden and height of volcanic ash and dust, all of which pose a safety threat to aircraft. In addition, anomaly maps of many of AIRS standard products are being produced to help highlight "hot spots" and illustrate trends. To distribute it's applications imagery, AIRS is leveraging existing NASA data frameworks and organizations to facilitate archiving, distribution and participation in the BEDI. This poster will communicate the status of the applications effort for the AIRS Project and provide examples of new maps designed to best communicate the AIRS data.

  17. Microfluidics for medical applications

    NARCIS (Netherlands)

    van den Berg, Albert; van den Berg, A.; Segerink, L.I.; Segerink, Loes Irene; Unknown, [Unknown

    2015-01-01

    Lab-on-a-chip devices for point of care diagnostics have been present in clinics for several years now. Alongside their continual development, research is underway to bring the organs and tissue on-a-chip to the patient, amongst other medical applications of microfluidics. This book provides the

  18. Intertwiners and their applications

    International Nuclear Information System (INIS)

    Breitenecker, M.; Gruemm, H.R.

    1982-01-01

    The concept of 'intertwiner' - less familiar to physicists - appears to be quite useful for the applications of group theory. We present as examples the change of ground field as well as a basis-free version of the Wigner-Eckart theorem. (Author)

  19. Applications of QCD

    International Nuclear Information System (INIS)

    Landshoff, P.V.

    1983-01-01

    The author describes the application of quantum chromodynamics to deep inelastic lepton scattering, the Drell-Yan process, e + e - -annihilation, #betta##betta#-physics, large psub(T) processes, and wide angle quark-quark scattering. Furthermore higher order terms are considered. (HSI)

  20. Thermoelectricity: materials and applications

    International Nuclear Information System (INIS)

    Elberg, S.; Mathonnet, P.

    1975-01-01

    After a brief recall of the basic principles of thermoelectricity, the essential characteristics intervening in the different thermoelectric devices operating modes are defined. Properties of the materials the most used nowadays and performances of the apparatus that they allow to realize are indicated. Advantages and drawbacks of the principal applications in the form of electrical generators, refrigerators and heat pumps are pointed out [fr

  1. Biomedical applications engineering tasks

    Science.gov (United States)

    Laenger, C. J., Sr.

    1976-01-01

    The engineering tasks performed in response to needs articulated by clinicians are described. Initial contacts were made with these clinician-technology requestors by the Southwest Research Institute NASA Biomedical Applications Team. The basic purpose of the program was to effectively transfer aerospace technology into functional hardware to solve real biomedical problems.

  2. Application of ion exchangers

    International Nuclear Information System (INIS)

    Markhol, M.

    1985-01-01

    Existing methods of multi-element separation for radiochemical analysis are considered. The majority of existing methods is noted to be based on application of organic and inorganic ion exchangers. Distillation, coprecipitation, extraction as well as combination of the above methods are also used. Concrete flowsheets of multi-element separation are presented

  3. Business Applications of WAP.

    Science.gov (United States)

    van Steenderen, Margaret

    2002-01-01

    Explains the development of WAP (wireless application protocol), how it works, and what the major advantages and disadvantages are, especially when applied to the use of information. Topics include standardization; mobile communications; the effect of WAP on business tools, electronic commerce, and information services; consumers; corporate users;…

  4. Permit application modifications

    International Nuclear Information System (INIS)

    1995-11-01

    This document contains the Permit Application Modifications for the Y-12 Industrial Landfill V site on the Oak Ridge Reservation. These modifications include the assessment of stability of the proposed Landfill V under static and loading conditions. Analyses performed include the general slope stability, veneer stability of the bottom liner and cover system, and a liquefaction potential assessment of the foundation soils

  5. Knotoids, Braidoids and Applications

    Directory of Open Access Journals (Sweden)

    Neslihan Gügümcü

    2017-12-01

    Full Text Available This paper is an introduction to the theory of braidoids. Braidoids are geometric objects analogous to classical braids, forming a counterpart theory to the theory of knotoids. We introduce these objects and their topological equivalences, and we conclude with a potential application to the study of proteins.

  6. Learning analytics dashboard applications

    NARCIS (Netherlands)

    Verbert, K.; Duval, E.; Klerkx, J.; Govaerts, S.; Santos, J.L.

    2013-01-01

    This article introduces learning analytics dashboards that visualize learning traces for learners and teachers. We present a conceptual framework that helps to analyze learning analytics applications for these kinds of users. We then present our own work in this area and compare with 15 related

  7. Zirconia in biomedical applications.

    Science.gov (United States)

    Chen, Yen-Wei; Moussi, Joelle; Drury, Jeanie L; Wataha, John C

    2016-10-01

    The use of zirconia in medicine and dentistry has rapidly expanded over the past decade, driven by its advantageous physical, biological, esthetic, and corrosion properties. Zirconia orthopedic hip replacements have shown superior wear-resistance over other systems; however, risk of catastrophic fracture remains a concern. In dentistry, zirconia has been widely adopted for endosseous implants, implant abutments, and all-ceramic crowns. Because of an increasing demand for esthetically pleasing dental restorations, zirconia-based ceramic restorations have become one of the dominant restorative choices. Areas covered: This review provides an updated overview of the applications of zirconia in medicine and dentistry with a focus on dental applications. The MEDLINE electronic database (via PubMed) was searched, and relevant original and review articles from 2010 to 2016 were included. Expert commentary: Recent data suggest that zirconia performs favorably in both orthopedic and dental applications, but quality long-term clinical data remain scarce. Concerns about the effects of wear, crystalline degradation, crack propagation, and catastrophic fracture are still debated. The future of zirconia in biomedical applications will depend on the generation of these data to resolve concerns.

  8. Electron beam simulation applicators

    International Nuclear Information System (INIS)

    Purdy, J.A.

    1983-01-01

    A system for simulating electron beam treatment portals using low-temperature melting point alloy is described. Special frames having the same physical dimensions as the electron beam applicators used on the Varian Clinac 20 linear accelerator were designed and constructed

  9. Microcontroller for automation application

    Science.gov (United States)

    Cooper, H. W.

    1975-01-01

    The description of a microcontroller currently being developed for automation application was given. It is basically an 8-bit microcomputer with a 40K byte random access memory/read only memory, and can control a maximum of 12 devices through standard 15-line interface ports.

  10. Star Products and Applications

    OpenAIRE

    Iida, Mari; Yoshioka, Akira

    2010-01-01

    Star products parametrized by complex matrices are defined. Especially commutative associative star products are treated, and star exponentials with respect to these star products are considered. Jacobi's theta functions are given as infinite sums of star exponentials. As application, several concrete identities are obtained by properties of the star exponentials.

  11. Technology and applications

    International Nuclear Information System (INIS)

    Bogdany, J.; Vesztergombi, G.

    1994-07-01

    The workshop on Parallel Processing, Technology and Applications, held February 10-11, Budapest, Hungary, covered a variety of topics on computer data processing and parallel computing. One of the 17 presentations discussed the need for massively parallel processing in support of future high energy experiments

  12. Assessment Applications of Ontologies.

    Science.gov (United States)

    Chung, Gregory K. W. K.; Niemi, David; Bewley, William L.

    This paper discusses the use of ontologies and their applications to assessment. An ontology provides a shared and common understanding of a domain that can be communicated among people and computational systems. The ontology captures one or more experts' conceptual representation of a domain expressed in terms of concepts and the relationships…

  13. AUTOMATED INADVERTENT INTRUDER APPLICATION

    International Nuclear Information System (INIS)

    Koffman, L; Patricia Lee, P; Jim Cook, J; Elmer Wilhite, E

    2007-01-01

    The Environmental Analysis and Performance Modeling group of Savannah River National Laboratory (SRNL) conducts performance assessments of the Savannah River Site (SRS) low-level waste facilities to meet the requirements of DOE Order 435.1. These performance assessments, which result in limits on the amounts of radiological substances that can be placed in the waste disposal facilities, consider numerous potential exposure pathways that could occur in the future. One set of exposure scenarios, known as inadvertent intruder analysis, considers the impact on hypothetical individuals who are assumed to inadvertently intrude onto the waste disposal site. Inadvertent intruder analysis considers three distinct scenarios for exposure referred to as the agriculture scenario, the resident scenario, and the post-drilling scenario. Each of these scenarios has specific exposure pathways that contribute to the overall dose for the scenario. For the inadvertent intruder analysis, the calculation of dose for the exposure pathways is a relatively straightforward algebraic calculation that utilizes dose conversion factors. Prior to 2004, these calculations were performed using an Excel spreadsheet. However, design checks of the spreadsheet calculations revealed that errors could be introduced inadvertently when copying spreadsheet formulas cell by cell and finding these errors was tedious and time consuming. This weakness led to the specification of functional requirements to create a software application that would automate the calculations for inadvertent intruder analysis using a controlled source of input parameters. This software application, named the Automated Inadvertent Intruder Application, has undergone rigorous testing of the internal calculations and meets software QA requirements. The Automated Inadvertent Intruder Application was intended to replace the previous spreadsheet analyses with an automated application that was verified to produce the same calculations and

  14. The fusion applications study - FAME

    International Nuclear Information System (INIS)

    Schultz, K.R.; Engholm, B.A.; Bourque, R.F.; Cheng, E.T.; Schaffer, M.J.; Wong, C.P.C.

    1986-01-01

    The Fusion Applications and Market Evaluation (''FAME'') study, being conducted by GA Technologies for Lawrence Livermore National Laboratory (LLNL) and US Department of Energy, Office of Fusion Energy, (US DOE) is described. This two-year program has a FY86 objective of Evaluating Alternative Applications of Fusion, and a FY87 goal of Exploring Innovative Applications. Applications are being reviewed and categorized into Baseline, Nuclear, Chemical, Electromagnetic, and Thermal application categories. The ''traditional'' applications of electricity generation, fissile fuel and tritium production, and hydrogen production continue to look attractive. Particularly promising new applications to date, with potential for near-term markets, are isotope production and radiation processing, especially when allied with the traditional application of electricity production. The economics of separate applications as well as coproduction are discussed. The combination of electricity and /sup 60/Co production appears to be one of the most attractive

  15. Laravel application development cookbook

    CERN Document Server

    Matula, Terry

    2013-01-01

    Get to grips with a new technology, understand what it is and what it can do for you, and then get to work with the most important features and tasks.A short and precise guide to get you started with EaselJS , helping you to create some cool applications and games.EaselJS greatly simplifies application development in HTML5 Canvas using a syntax and an architecture very similar to the ActionScript 3.0 language. As a result, Flash / Flex developers will immediately feel at home but it's very easy to learn even if you've never opened Flash in your life. The book targets Web designers, animators,

  16. Mechanisms, Transmissions and Applications

    CERN Document Server

    Corves, Burkhard

    2012-01-01

    The first Workshop on Mechanisms, Transmissions and Applications -- MeTrApp-2011 was organized by the Mechatronics Department at the Mechanical Engineering Faculty, “Politehnica” University of Timisoara, Romania, under the patronage of the IFToMM Technical Committees Linkages and Mechanical Controls and Micromachines. The workshop brought together researchers and students who work in disciplines associated with mechanisms science and offered a great opportunity for scientists from all over the world to present their achievements, exchange innovative ideas and create solid international links, setting the trend for future developments in this important and creative field. The topics treated in this volume are mechanisms and machine design, mechanical transmissions, mechatronic and biomechanic applications, computational and experimental methods, history of mechanism and machine science and teaching methods.

  17. Quality Control Applications

    CERN Document Server

    Chorafas, Dimitris N

    2013-01-01

    Quality control is a constant priority in electrical, mechanical, aeronautical, and nuclear engineering – as well as in the vast domain of electronics, from home appliances to computers and telecommunications. Quality Control Applications provides guidance and valuable insight into quality control policies; their methods, their implementation, constant observation and associated technical audits. What has previously been a mostly mathematical topic is translated here for engineers concerned with the practical implementation of quality control. Once the fundamentals of quality control are established, Quality Control Applications goes on to develop this knowledge and explain how to apply it in the most effective way. Techniques are described and supported using relevant, real-life, case studies to provide detail and clarity for those without a mathematical background. Among the many practical examples, two case studies dramatize the importance of quality assurance: A shot-by-shot analysis of the errors made ...

  18. Ceramics for fusion applications

    International Nuclear Information System (INIS)

    Clinard, F.W. Jr.

    1987-01-01

    Ceramics are required for a variety of uses in both near-term fusion devices and in commercial powerplants. These materials must retain adequate structural and electrical properties under conditions of neutron, particle and ionizing irradiation; thermal and applied stresses; and physical and chemical sputtering. Ceramics such as Al 2 O 3 , MgAl 2 O 4 , BeO, Si 3 N 4 and SiC are currently under study for fusion applications, and results to date show widely-varying responses to the fusion environment. Materials can be identified today that will meet initial operating requirements, but improvements in physical properties are needed to achieve satisfactory lifetimes for critical applications. (author)

  19. Applications of QCD

    International Nuclear Information System (INIS)

    Ellis, J.

    1978-05-01

    A review is given of reliable quantum chromodynamics predictions which either have or soon can be verified by experiment. Included are a discussion of the classic application of quantum chromodynamics perturbation theory and asymptotic freedom to predict scaling violations in deep inelastic leptoproduction experiments, with emphasis on the first direct experimental confirmation of the numerical values of the anomalous dimensions; a review of recent advances in developing and justifying quantum chromodynamics perturbation theory predictions for a number of physical applications not underwritten by the operator product expansion and renormalization group arguments; and mention of attempts to consider the reliability of quantum chromodynamics perturbation theory predictions, given the fact that nonperturbative effects are presumably crucial in quantum chromodynamics. 100 references

  20. Optical Polarizationin Biomedical Applications

    CERN Document Server

    Tuchin, Valery V; Zimnyakov, Dmitry A

    2006-01-01

    Optical Polarization in Biomedical Applications introduces key developments in optical polarization methods for quantitative studies of tissues, while presenting the theory of polarization transfer in a random medium as a basis for the quantitative description of polarized light interaction with tissues. This theory uses the modified transfer equation for Stokes parameters and predicts the polarization structure of multiple scattered optical fields. The backscattering polarization matrices (Jones matrix and Mueller matrix) important for noninvasive medical diagnostic are introduced. The text also describes a number of diagnostic techniques such as CW polarization imaging and spectroscopy, polarization microscopy and cytometry. As a new tool for medical diagnosis, optical coherent polarization tomography is analyzed. The monograph also covers a range of biomedical applications, among them cataract and glaucoma diagnostics, glucose sensing, and the detection of bacteria.