WorldWideScience

Sample records for high-emitting current average

  1. High-Average, High-Peak Current Injector Design

    CERN Document Server

    Biedron, S G; Virgo, M

    2005-01-01

    There is increasing interest in high-average-power (>100 kW), um-range FELs. These machines require high peak current (~1 kA), modest transverse emittance, and beam energies of ~100 MeV. High average currents (~1 A) place additional constraints on the design of the injector. We present a design for an injector intended to produce the required peak currents at the injector, eliminating the need for magnetic compression within the linac. This reduces the potential for beam quality degradation due to CSR and space charge effects within magnetic chicanes.

  2. Record high-average current from a high-brightness photoinjector

    Energy Technology Data Exchange (ETDEWEB)

    Dunham, Bruce; Barley, John; Bartnik, Adam; Bazarov, Ivan; Cultrera, Luca; Dobbins, John; Hoffstaetter, Georg; Johnson, Brent; Kaplan, Roger; Karkare, Siddharth; Kostroun, Vaclav; Li Yulin; Liepe, Matthias; Liu Xianghong; Loehl, Florian; Maxson, Jared; Quigley, Peter; Reilly, John; Rice, David; Sabol, Daniel [Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, New York 14853 (United States); and others

    2013-01-21

    High-power, high-brightness electron beams are of interest for many applications, especially as drivers for free electron lasers and energy recovery linac light sources. For these particular applications, photoemission injectors are used in most cases, and the initial beam brightness from the injector sets a limit on the quality of the light generated at the end of the accelerator. At Cornell University, we have built such a high-power injector using a DC photoemission gun followed by a superconducting accelerating module. Recent results will be presented demonstrating record setting performance up to 65 mA average current with beam energies of 4-5 MeV.

  3. Nanosecond field emitted and photo-field emitted current pulses from ZrC tips

    International Nuclear Information System (INIS)

    Ganter, R.; Bakker, R.J.; Gough, C.; Paraliev, M.; Pedrozzi, M.; Le Pimpec, F.; Rivkin, L.; Wrulich, A.

    2006-01-01

    In order to find electron sources with low thermal emittance, cathodes based on single tip field emitter are investigated. Maximum peak current, measured from single tip in ZrC with a typical apex radius around 1 μm, are presented. Voltage pulses of 2 ns duration and up to 50 kV amplitude lead to field emission current up to 470 mA from one ZrC tip. Combination of high applied electric field with laser illumination gives the possibility to modulate the emission with laser pulses. Nanoseconds current pulses have been emitted with laser pulses at 1064 nm illuminating a ZrC tip under high-DC electric field. The dependence of photo-field emitted current with the applied voltage can be explained by the Schottky effect

  4. Nanosecond field emitted and photo-field emitted current pulses from ZrC tips

    Energy Technology Data Exchange (ETDEWEB)

    Ganter, R. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland)]. E-mail: romain.ganter@psi.ch; Bakker, R.J. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Gough, C. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Paraliev, M. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Pedrozzi, M. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Le Pimpec, F. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Rivkin, L. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland); Wrulich, A. [Paul Scherrer Institut, Villigen, CH 5232 (Switzerland)

    2006-09-15

    In order to find electron sources with low thermal emittance, cathodes based on single tip field emitter are investigated. Maximum peak current, measured from single tip in ZrC with a typical apex radius around 1 {mu}m, are presented. Voltage pulses of 2 ns duration and up to 50 kV amplitude lead to field emission current up to 470 mA from one ZrC tip. Combination of high applied electric field with laser illumination gives the possibility to modulate the emission with laser pulses. Nanoseconds current pulses have been emitted with laser pulses at 1064 nm illuminating a ZrC tip under high-DC electric field. The dependence of photo-field emitted current with the applied voltage can be explained by the Schottky effect.

  5. Development of a high average current polarized electron source with long cathode operational lifetime

    Energy Technology Data Exchange (ETDEWEB)

    C. K. Sinclair; P. A. Adderley; B. M. Dunham; J. C. Hansknecht; P. Hartmann; M. Poelker; J. S. Price; P. M. Rutt; W. J. Schneider; M. Steigerwald

    2007-02-01

    Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory) require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and have often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2?105???C/cm2 and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.

  6. Analytic formalism for current crowding in light emitting diodes

    International Nuclear Information System (INIS)

    Lee, Kyu-Seok

    2012-01-01

    This paper presents an analytic approach to simulating current crowding (CC) in light-emitting diodes with parallel p- and n-contacts. The electrical potential difference across the p-i-n layers is derived from the Laplace equation, whereas the current density through the p-i-n layers is obtained from the current density - voltage relation of a single-diode model. Since these two properties influence each other, they are calculated iteratively. It is found that CC depends on the applied voltage (or the average current density), the sheet resistances of the p- and the n-contact layers, the width of the active region, and the specific series resistance and ideality factor of the p-i-n layers. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  7. Development of a high average current polarized electron source with long cathode operational lifetime

    Directory of Open Access Journals (Sweden)

    C. K. Sinclair

    2007-02-01

    Full Text Available Substantially more than half of the electromagnetic nuclear physics experiments conducted at the Continuous Electron Beam Accelerator Facility of the Thomas Jefferson National Accelerator Facility (Jefferson Laboratory require highly polarized electron beams, often at high average current. Spin-polarized electrons are produced by photoemission from various GaAs-based semiconductor photocathodes, using circularly polarized laser light with photon energy slightly larger than the semiconductor band gap. The photocathodes are prepared by activation of the clean semiconductor surface to negative electron affinity using cesium and oxidation. Historically, in many laboratories worldwide, these photocathodes have had short operational lifetimes at high average current, and have often deteriorated fairly quickly in ultrahigh vacuum even without electron beam delivery. At Jefferson Lab, we have developed a polarized electron source in which the photocathodes degrade exceptionally slowly without electron emission, and in which ion back bombardment is the predominant mechanism limiting the operational lifetime of the cathodes during electron emission. We have reproducibly obtained cathode 1/e dark lifetimes over two years, and 1/e charge density and charge lifetimes during electron beam delivery of over 2×10^{5}   C/cm^{2} and 200 C, respectively. This source is able to support uninterrupted high average current polarized beam delivery to three experimental halls simultaneously for many months at a time. Many of the techniques we report here are directly applicable to the development of GaAs photoemission electron guns to deliver high average current, high brightness unpolarized beams.

  8. Current Spreading Layer with High Transparency and Conductivity for near-ultraviolet light emitting diodes

    DEFF Research Database (Denmark)

    Lin, Li; Jensen, Flemming; Herstrøm, Berit

    Transparent conductive aluminum-doped zinc oxide (AZO) layer was deposited on GaN-based near-ultraviolet (NUV) light emitting epitaxial wafers as current spreading layer by a sputtering process. Efforts were made to improve the electrical properties of AZO in order to produce ohmic contact....

  9. Pulsed operation of high-power light emitting diodes for imaging flow velocimetry

    International Nuclear Information System (INIS)

    Willert, C; Klinner, J; Moessner, S; Stasicki, B

    2010-01-01

    High-powered light emitting diodes (LED) are investigated for possible uses as light sources in flow diagnostics, in particular, as an alternative to laser-based illumination in particle imaging flow velocimetry in side-scatter imaging arrangements. Recent developments in solid state illumination resulted in mass-produced LEDs that provide average radiant power in excess of 10 W. By operating these LEDs with short duration, pulsed currents that are considerably beyond their continuous current damage threshold, light pulses can be generated that are sufficient to illuminate and image micron-sized particles in flow velocimetry. Time-resolved PIV measurements in water at a framing rate of 2kHz are presented. The feasibility of LED-based PIV measurements in air is also demonstrated

  10. Sliding Mode Pulsed Averaging IC Drivers for High Brightness Light Emitting Diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dr. Anatoly Shteynberg, PhD

    2006-08-17

    This project developed new Light Emitting Diode (LED) driver ICs associated with specific (uniquely operated) switching power supplies that optimize performance for High Brightness LEDs (HB-LEDs). The drivers utilize a digital control core with a newly developed nonlinear, hysteretic/sliding mode controller with mixed-signal processing. The drivers are flexible enough to allow both traditional microprocessor interface as well as other options such as “on the fly” adjustment of color and brightness. Some other unique features of the newly developed drivers include • AC Power Factor Correction; • High power efficiency; • Substantially fewer external components should be required, leading to substantial reduction of Bill of Materials (BOM). Thus, the LED drivers developed in this research : optimize LED performance by increasing power efficiency and power factor. Perhaps more remarkably, the LED drivers provide this improved performance at substantially reduced costs compared to the present LED power electronic driver circuits. Since one of the barriers to market penetration for HB-LEDs (in particular “white” light LEDs) is cost/lumen, this research makes important contributions in helping the advancement of SSL consumer acceptance and usage.

  11. Finding the Average Speed of a Light-Emitting Toy Car with a Smartphone Light Sensor

    Science.gov (United States)

    Kapucu, Serkan

    2017-01-01

    This study aims to demonstrate how the average speed of a light-emitting toy car may be determined using a smartphone's light sensor. The freely available Android smartphone application, "AndroSensor," was used for the experiment. The classroom experiment combines complementary physics knowledge of optics and kinematics to find the…

  12. A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

    Directory of Open Access Journals (Sweden)

    W. Wang

    2015-01-01

    Full Text Available A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a 6.6×5 mm2 large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

  13. Dark current studies on a normal-conducting high-brightness very-high-frequency electron gun operating in continuous wave mode

    Directory of Open Access Journals (Sweden)

    R. Huang

    2015-01-01

    Full Text Available We report on measurements and analysis of a field-emitted electron current in the very-high-frequency (VHF gun, a room temperature rf gun operating at high field and continuous wave (CW mode at the Lawrence Berkeley National Laboratory (LBNL. The VHF gun is the core of the Advanced Photo-injector Experiment (APEX at LBNL, geared toward the development of an injector for driving the next generation of high average power x-ray free electron lasers. High accelerating fields at the cathode are necessary for the high-brightness performance of an electron gun. When coupled with CW operation, such fields can generate a significant amount of field-emitted electrons that can be transported downstream the accelerator forming the so-called “dark current.” Elevated levels of a dark current can cause radiation damage, increase the heat load in the downstream cryogenic systems, and ultimately limit the overall performance and reliability of the facility. We performed systematic measurements that allowed us to characterize the field emission from the VHF gun, determine the location of the main emitters, and define an effective strategy to reduce and control the level of dark current at APEX. Furthermore, the energy spectra of isolated sources have been measured. A simple model for energy data analysis was developed that allows one to extract information on the emitter from a single energy distribution measurement.

  14. Graphene as current spreading layer on AlGaInP light emitting diodes

    Science.gov (United States)

    Guo, Xia; Feng, Yajie; Liu, Qiaoli; Hu, Anqi; He, Xiaoying; Hu, Zonghai

    2018-05-01

    Due to high transmittance and high mobility, graphene is one of the promising candidates for a current spreading layer, which is crucial to light emitting diode (LED) performance. In this paper, improved AlGaInP LED performance was reported after graphene was applied on the GaP surface. Due to its lowered work function difference than with the GaN material, the electrical properties remain the same without additional voltage bias. The light output power is enhanced by about 40% under the current injection of 5 mA at room temperature, which was confirmed by the light emission profile analysis in this study. Such results indicate that raphene is a promising candidate as a current spreading layer under low current injection.

  15. High current plasma electron emitter

    International Nuclear Information System (INIS)

    Fiksel, G.; Almagri, A.F.; Craig, D.

    1995-07-01

    A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current, small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications

  16. Highly strained InGaAs/GaAs quantum wells emitting beyond 1.2 {mu}m

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, T.K.; Zorn, M.; Zeimer, U.; Kissel, H.; Bugge, F.; Weyers, M. [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2005-09-01

    Highly strained In{sub x}Ga{sub 1-x}As quantum wells (QWs) with GaAs barriers emitting around 1.2 {mu}m are grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE) at low growth temperatures using conventional precursors. The effects of growth temperature, V/III ratio and growth rate on QW composition and luminescence properties are studied. The variation of indium incorporation with V/III ratio at a growth temperature of 510 C is found to be opposite to the results reported for 700 C. By an appropriate choice of the growth parameters, we could extend the room temperature photoluminescence (PL) wavelength of InGaAs/GaAs QWs up to about 1.24 {mu}m which corresponds to an average indium content of 41% in the QW. The results of the growth study were applied to broad area laser diodes emitting at 1193 nm with low threshold current densities. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Efficiency roll-off suppression in organic light-emitting diodes using size-tunable bimetallic bowtie nanoantennas at high current densities

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Yukun [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Yun, Feng, E-mail: fyun2010@mail.xjtu.edu.cn; Li, Yufeng; Feng, Lungang; Ding, Wen [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Huang, Yi [Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ (United Kingdom); Wu, Zhaoxin; Jiao, Bo; Li, Sanfeng [Key Laboratory of Physical Electronics and Devices of Ministry of Education and Shaanxi Provincial Key Laboratory of Photonics & Information Technology, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China); Zhang, Ye [Solid-State Lighting Engineering Research Center, Xi' an Jiaotong University, Xi' an, Shaanxi 710049 (China)

    2016-07-04

    Size-tunable bimetallic bowtie nanoantennas have been utilized to suppress the efficiency roll-off characteristics in organic light-emitting diodes (OLEDs) using both the numerical and experimental approaches. The resonant range can be widened by the strong dual-atomic couplings in bimetallic bowtie nanoantennas. Compared with the green OLED with conventional bowtie nanoantennas at a high current density of 800 mA/cm{sup 2}, the measured efficiency roll-off ratio of the OLED with size-modulated bowtie nanoantennas is decreased from 53.2% to 41.8%, and the measured current efficiency is enhanced by 29.9%. When the size-modulated bowtie nanoantennas are utilized in blue phosphorescent OLEDs, the experimental roll-off ratio is suppressed from 43.6% to 25.9% at 250 mA/cm{sup 2}, and the measured current efficiency is also enhanced significantly. It is proposed that the efficiency roll-off suppression is mainly related to the enhanced localized surface plasmon effect, which leads to a shorter radiative lifetime.

  18. Efficiency roll-off suppression in organic light-emitting diodes using size-tunable bimetallic bowtie nanoantennas at high current densities

    International Nuclear Information System (INIS)

    Zhao, Yukun; Yun, Feng; Li, Yufeng; Feng, Lungang; Ding, Wen; Huang, Yi; Wu, Zhaoxin; Jiao, Bo; Li, Sanfeng; Zhang, Ye

    2016-01-01

    Size-tunable bimetallic bowtie nanoantennas have been utilized to suppress the efficiency roll-off characteristics in organic light-emitting diodes (OLEDs) using both the numerical and experimental approaches. The resonant range can be widened by the strong dual-atomic couplings in bimetallic bowtie nanoantennas. Compared with the green OLED with conventional bowtie nanoantennas at a high current density of 800 mA/cm"2, the measured efficiency roll-off ratio of the OLED with size-modulated bowtie nanoantennas is decreased from 53.2% to 41.8%, and the measured current efficiency is enhanced by 29.9%. When the size-modulated bowtie nanoantennas are utilized in blue phosphorescent OLEDs, the experimental roll-off ratio is suppressed from 43.6% to 25.9% at 250 mA/cm"2, and the measured current efficiency is also enhanced significantly. It is proposed that the efficiency roll-off suppression is mainly related to the enhanced localized surface plasmon effect, which leads to a shorter radiative lifetime.

  19. Initial Beam Dynamics Simulations of a High-Average-Current Field-Emission Electron Source in a Superconducting RadioFrequency Gun

    Energy Technology Data Exchange (ETDEWEB)

    Mohsen, O. [Northern Illinois U.; Gonin, I. [Fermilab; Kephart, R. [Fermilab; Khabiboulline, T. [Fermilab; Piot, P. [Northern Illinois U.; Solyak, N. [Fermilab; Thangaraj, J. C. [Fermilab; Yakovlev, V. [Fermilab

    2018-01-05

    High-power electron beams are sought-after tools in support to a wide array of societal applications. This paper investigates the production of high-power electron beams by combining a high-current field-emission electron source to a superconducting radio-frequency (SRF) cavity. We especially carry out beam-dynamics simulations that demonstrate the viability of the scheme to form $\\sim$ 300 kW average-power electron beam using a 1+1/2-cell SRF gun.

  20. Highly strained InGaAs oxide confined VCSELs emitting in 1.25 μm

    International Nuclear Information System (INIS)

    Chang, S.J.; Yu, H.C.; Su, Y.K.; Chen, I.L.; Lee, T.D.; Lu, C.M.; Chiou, C.H.; Lee, Z.H.; Yang, H.P.; Sung, C.P.

    2005-01-01

    Highly strained GaAs-based all-epitaxial oxide confined vertical cavity surface emitting lasers (VCSELs) emitting in 1.25 μm were fabricated. Compared with the designed cavity resonance, it was found that lasing wavelength blue shifted by 29 nm when the driving current was small. The observation of such oxide mode is attributed to the effective optical thickness shrinkage of the oxide layer, and large detuning between the gain peak and cavity resonance

  1. Field emitted electron trajectories for the CEBAF cavity

    International Nuclear Information System (INIS)

    Yunn, B.C.; Sundelin, R.M.

    1993-06-01

    Electromagnetic fields of the superconducting 5-cell CEBAF cavity with its fundamental power coupler are solved numerically with URMEL and MAFIA codes. Trajectories of field emitted electrons following the Fowler-Nordheim relation are studied with a numerical program which accepts the URMEL/MAFIA fields. Emission sites and gradients are determined for those electrons which can reach the cold ceramic window either directly or by an energetic backscattering. The peak and average impact energy and current are found. The generation of dark current by field emitted electrons has also been studied, and its relevance to CEBAF operation is briefly discussed

  2. Choice of initial operating parameters for high average current linear accelerators

    International Nuclear Information System (INIS)

    Batchelor, K.

    1976-01-01

    Recent emphasis on alternative energy sources together with the need for intense neutron sources for testing of materials for CTR has resulted in renewed interest in high current (approximately 100 mA) c.w. proton and deuteron linear accelerators. In desinging an accelerator for such high currents, it is evident that beam losses in the machine must be minimized, which implies well matched beams, and that adequate acceptance under severe space charge conditions must be met. An investigation is presented of the input parameters to an Alvarez type drift-tube accelerator resulting from such factors. The analysis indicates that an accelerator operating at a frequency of 50 MHz is capable of accepting deuteron currents of about 0.4 amperes and proton currents of about 1.2 amperes. These values depend critically on the assumed values of beam emittance and on the ability to properly ''match'' this to the linac acceptance

  3. Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm−2

    International Nuclear Information System (INIS)

    Tian, Pengfei; Liu, Ran; Althumali, Ahmad; Gu, Erdan; Watson, Ian M; Dawson, Martin D

    2016-01-01

    The aging characteristics of blue InGaN micro-light emitting diodes (micro-LEDs) with different sizes have been studied at an extremely high current density 3.5 kA cm −2 for emerging micro-LED applications including visible light communication (VLC), micro-LED pumped organic lasers and optogenetics. The light output power of micro-LEDs first increases and then decreases due to the competition of Mg activation in p-GaN layer and defect generation in the active region. The smaller micro-LEDs show less light output power degradation compared with larger micro-LEDs, which is attributed to the lower junction temperature of smaller micro-LEDs. It is found that the high current density without additional junction temperature cannot induce significant micro-LED degradation at room temperature but the combination of the high current density and high junction temperature leads to strong degradation. Furthermore, the cluster LEDs, composed of a micro-LED array, have been developed with both high light output power and less light output degradation for micro-LED applications in solid state lighting and VLC. (paper)

  4. High tunability and superluminescence in InAs mid-infrared light emitting diodes

    International Nuclear Information System (INIS)

    Sherstnev, V.V.; Krier, A.; Hill, G.

    2002-01-01

    We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

  5. Predictive Trailing-Edge Modulation Average Current Control in DC-DC Converters

    Directory of Open Access Journals (Sweden)

    LASCU, D.

    2013-11-01

    Full Text Available The paper investigates predictive digital average current control (PDACC in dc/dc converters using trailing-edge modulation (TEM. The study is focused on the recurrence duty cycle equation and then stability analysis is performed. It is demonstrated that average current control using trailing-edge modulation is stable on the whole range of the duty cycle and thus design problems are highly reduced. The analysis is carried out in a general manner, independent of converter topology and therefore the results can then be easily applied for a certain converter (buck, boost, buck-boost, etc.. The theoretical considerations are confirmed for a boost converter first using the MATLAB program based on state-space equations and finally with the CASPOC circuit simulation package.

  6. Coincidence of features of emitted THz electromagnetic wave power form a single Josephson junction and different current components

    Science.gov (United States)

    Hamdipour, Mohammad

    2017-12-01

    By applying a voltage to a Josephson junction, the charge in superconducting layers (S-layers) will oscillate. Wavelength of the charge oscillations in S-layers is related to external current in junction, by increasing the external current, the wavelength will decrease which cause in some currents the wavelength be incommensurate with width of junction, so the CVC shows Fiske like steps. External current throwing along junction has some components, resistive, capacitive and superconducting current, beside these currents there is a current in lateral direction of junction, (x direction). On the other hand, the emitted electromagnetic wave power in THz region is related to AC component of electric field in junction, which itself is related to charge density in S-layers, which is related to currents in the system. So we expect that features of variation of current components reflect the features of emitted THz power form junction. Here we study in detail the superconductive current in a long Josephson junction (JJ), the current voltage characteristics (CVC) of junction and emitted THz power from the system. Then we compare the results. Comparing the results we see that there is a good qualitative coincidence in features of emitted THz power and supercurrent in junction.

  7. Submonolayer Quantum Dots for High Speed Surface Emitting Lasers

    Directory of Open Access Journals (Sweden)

    Zakharov ND

    2007-01-01

    Full Text Available AbstractWe report on progress in growth and applications of submonolayer (SML quantum dots (QDs in high-speed vertical-cavity surface-emitting lasers (VCSELs. SML deposition enables controlled formation of high density QD arrays with good size and shape uniformity. Further increase in excitonic absorption and gain is possible with vertical stacking of SML QDs using ultrathin spacer layers. Vertically correlated, tilted or anticorrelated arrangements of the SML islands are realized and allow QD strain and wavefunction engineering. Respectively, both TE and TM polarizations of the luminescence can be achieved in the edge-emission using the same constituting materials. SML QDs provide ultrahigh modal gain, reduced temperature depletion and gain saturation effects when used in active media in laser diodes. Temperature robustness up to 100 °C for 0.98 μm range vertical-cavity surface-emitting lasers (VCSELs is realized in the continuous wave regime. An open eye 20 Gb/s operation with bit error rates better than 10−12has been achieved in a temperature range 25–85 °Cwithout current adjustment. Relaxation oscillations up to ∼30 GHz have been realized indicating feasibility of 40 Gb/s signal transmission.

  8. Highly efficient white organic light-emitting devices consisting of undoped ultrathin yellow phosphorescent layer

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Shengqiang [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Ma, Zhu; Zhao, Juan [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2013-02-15

    High-efficiency white organic light-emitting devices (WOLEDs) based on an undoped ultrathin yellow light-emitting layer and a doped blue light-emitting layer were demonstrated. While the thickness of blue light-emitting layer, formed by doping a charge-trapping phosphor, iridium(III) bis(4 Prime ,6 Prime -difluorophenylpyridinato)tetrakis(1-pyrazolyl)borate (FIr6) in a wide bandgap host, was kept constant, the thickness of neat yellow emissive layer of novel phosphorescent material, bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2 Prime }]iridium (acetylacetonate) [(t-bt){sub 2}Ir(acac)] was varied to optimize the device performance. The optimized device exhibited maximum luminance, current efficiency and power efficiency of 24,000 cd/m{sup 2} (at 15.2 V), 79.0 cd/A (at 1550 cd/m{sup 2}) and 40.5 lm/W (at 1000 cd/m{sup 2}), respectively. Besides, the white-light emission covered a wide range of visible spectrum, and the Commission Internationale de l'Eclairage coordinates were (0.32, 0.38) with a color temperature of 5800 K at 8 V. Moreover, high external quantum efficiency was also obtained in the high-efficiency WOLEDs. The performance enhancement was attributed to the proper thickness of (t-bt){sub 2}Ir(acac) layer that enabled adequate current density and enough phosphorescent dye to trap electrons. - Highlights: Black-Right-Pointing-Pointer Highly efficient WOLEDs based on two complementary layers were fabricated. Black-Right-Pointing-Pointer The yellow emissive layer was formed by utilizing undoping system. Black-Right-Pointing-Pointer The blue emissive layer was made by host-guest doping system. Black-Right-Pointing-Pointer The thickness of the yellow emissive layer was varied to make device optimization. Black-Right-Pointing-Pointer The optimized device achieved high power efficiency of 40.5 lm/W.

  9. Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul 151-742 (Korea, Republic of)

    2014-02-17

    We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000 cd/m{sup 2} corresponding to a current efficiency of 110 cd/A, low efficiency roll-off with 21% at 10 000 cd/m{sup 2} and low turn on voltage of 2.4 V. Especially, the device showed very small color change with the variation of Δx = 0.02, Δy = 0.02 in the CIE 1931 coordinates as the viewing angle changes from 0° to 60°. The performance of the device is superior to that of the metal/metal cavity structured device.

  10. High mobility solution-processed hybrid light emitting transistors

    International Nuclear Information System (INIS)

    Walker, Bright; Kim, Jin Young; Ullah, Mujeeb; Burn, Paul L.; Namdas, Ebinazar B.; Chae, Gil Jo; Cho, Shinuk; Seo, Jung Hwa

    2014-01-01

    We report the design, fabrication, and characterization of high-performance, solution-processed hybrid (inorganic-organic) light emitting transistors (HLETs). The devices employ a high-mobility, solution-processed cadmium sulfide layer as the switching and transport layer, with a conjugated polymer Super Yellow as an emissive material in non-planar source/drain transistor geometry. We demonstrate HLETs with electron mobilities of up to 19.5 cm 2 /V s, current on/off ratios of >10 7 , and external quantum efficiency of 10 −2 % at 2100 cd/m 2 . These combined optical and electrical performance exceed those reported to date for HLETs. Furthermore, we provide full analysis of charge injection, charge transport, and recombination mechanism of the HLETs. The high brightness coupled with a high on/off ratio and low-cost solution processing makes this type of hybrid device attractive from a manufacturing perspective

  11. Room temperature current injection polariton light emitting diode with a hybrid microcavity.

    Science.gov (United States)

    Lu, Tien-Chang; Chen, Jun-Rong; Lin, Shiang-Chi; Huang, Si-Wei; Wang, Shing-Chung; Yamamoto, Yoshihisa

    2011-07-13

    The strong light-matter interaction within a semiconductor high-Q microcavity has been used to produce half-matter/half-light quasiparticles, exciton-polaritons. The exciton-polaritons have very small effective mass and controllable energy-momentum dispersion relation. These unique properties of polaritons provide the possibility to investigate the fundamental physics including solid-state cavity quantum electrodynamics, and dynamical Bose-Einstein condensates (BECs). Thus far the polariton BEC has been demonstrated using optical excitation. However, from a practical viewpoint, the current injection polariton devices operating at room temperature would be most desirable. Here we report the first realization of a current injection microcavity GaN exciton-polariton light emitting diode (LED) operating under room temperature. The exciton-polariton emission from the LED at photon energy 3.02 eV under strong coupling condition is confirmed through temperature-dependent and angle-resolved electroluminescence spectra.

  12. Dose calculation for photon-emitting brachytherapy sources with average energy higher than 50 keV: report of the AAPM and ESTRO.

    Science.gov (United States)

    Perez-Calatayud, Jose; Ballester, Facundo; Das, Rupak K; Dewerd, Larry A; Ibbott, Geoffrey S; Meigooni, Ali S; Ouhib, Zoubir; Rivard, Mark J; Sloboda, Ron S; Williamson, Jeffrey F

    2012-05-01

    Recommendations of the American Association of Physicists in Medicine (AAPM) and the European Society for Radiotherapy and Oncology (ESTRO) on dose calculations for high-energy (average energy higher than 50 keV) photon-emitting brachytherapy sources are presented, including the physical characteristics of specific (192)Ir, (137)Cs, and (60)Co source models. This report has been prepared by the High Energy Brachytherapy Source Dosimetry (HEBD) Working Group. This report includes considerations in the application of the TG-43U1 formalism to high-energy photon-emitting sources with particular attention to phantom size effects, interpolation accuracy dependence on dose calculation grid size, and dosimetry parameter dependence on source active length. Consensus datasets for commercially available high-energy photon sources are provided, along with recommended methods for evaluating these datasets. Recommendations on dosimetry characterization methods, mainly using experimental procedures and Monte Carlo, are established and discussed. Also included are methodological recommendations on detector choice, detector energy response characterization and phantom materials, and measurement specification methodology. Uncertainty analyses are discussed and recommendations for high-energy sources without consensus datasets are given. Recommended consensus datasets for high-energy sources have been derived for sources that were commercially available as of January 2010. Data are presented according to the AAPM TG-43U1 formalism, with modified interpolation and extrapolation techniques of the AAPM TG-43U1S1 report for the 2D anisotropy function and radial dose function.

  13. Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis

    International Nuclear Information System (INIS)

    Yun, J; Shim, J-I; Shin, D-S

    2013-01-01

    We demonstrate a modeling method based on the three-dimensional electrical and thermal circuit analysis to extract current, voltage and temperature distributions of light-emitting diodes (LEDs). In our model, the electrical circuit analysis is performed first to extract the current and voltage distributions in the LED. Utilizing the result obtained from the electrical circuit analysis as distributed heat sources, the thermal circuit is set up by using the duality between Fourier's law and Ohm's law. From the analysis of the thermal circuit, the temperature distribution at each epitaxial film is successfully obtained. Comparisons of experimental and simulation results are made by employing an InGaN/GaN multiple-quantum-well blue LED. Validity of the electrical circuit analysis is confirmed by comparing the light distribution at the surface. Since the temperature distribution at each epitaxial film cannot be obtained experimentally, the apparent temperature distribution is compared at the surface of the LED chip. Also, experimentally obtained average junction temperature is compared with the value calculated from the modeling, yielding a very good agreement. The analysis method based on the circuit modeling has an advantage of taking distributed heat sources as inputs, which is essential for high-power devices with significant self-heating. (paper)

  14. Angular distributions of nucleons emitted in high energy hadron-nucleus collisions

    International Nuclear Information System (INIS)

    Strugalski, Z.

    1983-01-01

    Angular distributions of ''fast'' protons, of kinetic energy from about 20 to about 400 MeV, emitted in pion-xenon nucleus collisions at 3.5 GeV/c momentum were studied in two groups of events - when particles are produced and when particle production does not occur. The distributions are practically the same in both the groups of events and in subgroups of events with various multiplicities of emitted protons. Comparison of angular distributions of protons emitted in pion-xenon nucleus collisions at 3.5 GeV/c momentum with corresponding angular distributions of protons emitted in proton-emulsion collisions at 300-400 GeV/c momentum is performed. Results obtained allow to conclude that average value of the nucleon emission angle and the nucleon angular distributions do not depend practically on the nuclear matter layer thickness the incident hadron collided with. Fast nucleons emitted from the target nucleus seem did not interact inside the parent nucleus. Fast nucleon angular distributions do not depend on the energy of incident hadron, they are the same for pion-nucleus and for proton-nucleus collisions as well

  15. Formulating CdSe quantum dots for white light-emitting diodes with high color rendering index

    International Nuclear Information System (INIS)

    Li, Fei; Li, Wan-Nan; Fu, Shao-Yun; Xiao, Hong-Mei

    2015-01-01

    Generation of white light using CdSe quantum dots (QDs) alone presents exciting possibilities for solid state lighting technology. In this work, Cd(Ac) 2 ·2H 2 O and Na 2 SeSO 3 are used as precursors to synthesize CdSe-QDs with an average diameter ranging from 2.77 to 4.65 nm at the low temperature from 60 to 180 °C. Smaller CdSe-QDs with an average diameter of 2.29 nm are got by an oxidation etching process using H 2 O 2 as oxidant. The structural and optical properties of these QDs are investigated and proper formulation of CdSe QDs with various sizes is carefully designed to achieve white light with a high color rendering index (CRI). It is observed for the first time that the as-prepared white light-emitting diodes from single CdSe-QDs show the Commission Inernationale del’Eclairage coordinate (CIE) of (0.30,0.34) very close to that (0.33,0.33) of pure white light and a high CRI of 84. Owing to these advantages, the as-prepared white light-emitting diodes from a single compound are promising for lighting applications. - Highlights: • CdSe-quantum dots (QDs) with a continuously changing size from 2.31 to 4.74 nm are prepared. • The obtained CdSe-QDs emit lights with tunable colors in the whole visible range. • The obtained mixture sample generates white light with a high color rendering index of 84. • The sample yields white light with the CIE coordinate (0.30, 0.34) very close to that of pure white light

  16. Highly efficient white top-emitting organic light-emitting diodes with forward directed light emission

    Energy Technology Data Exchange (ETDEWEB)

    Freitag, Patricia; Reineke, Sebastian; Furno, Mauro; Luessem, Bjoern; Leo, Karl [Institut fuer Angewandte Photophysik, TU Dresden (Germany)

    2010-07-01

    The demand for highly efficient and energy saving illumination has increased considerably during the last decades. Organic light emitting diodes (OLEDs) are promising candidates for future lighting technologies. They offer high efficiency along with excellent color quality, allowing substantially lower power consumption than traditional illuminants. Recently, especially top-emitting devices have attracted high interest due to their compatibility with opaque substrates like metal sheets. In this contribution, we demonstrate top-emitting OLEDs with white emission spectra employing a multilayer hybrid cavity structure with two highly efficient phosphorescent emitter materials for orange-red (Ir(MDQ)2(acac)) and green (Ir(ppy)3) emission as well as the stable fluorescent blue emitter TBPe. To improve the OLED performance and modify the color quality, two different electron blocking layers and anode material combinations are tested. Compared to Lambertian emission, our devices show considerably enhanced forward emission, which is preferred for most lighting applications. Besides broadband emission and angle independent emission maxima, power efficiencies of 13.3 lm/W at 3 V and external quantum efficiencies of 5.3% are achieved. The emission shows excellent CIE coordinates of (0.420,0.407) at approx. 1000 cd/m{sup 2} and color rendering indices up to 77.

  17. Suppression of external quantum efficiency roll-off of nanopatterned organic-light emitting diodes at high current densities

    Energy Technology Data Exchange (ETDEWEB)

    Kuwae, Hiroyuki; Kasahara, Takashi [Nano-Science and Nano-Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); JST, ERATO, Adachi Molecular Exciton Engineering Project, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Nitta, Atsushi; Yoshida, Kou; Inoue, Munetomo [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Matsushima, Toshinori; Adachi, Chihaya, E-mail: adachi@cstf.kyushu-u.ac.jp [JST, ERATO, Adachi Molecular Exciton Engineering Project, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Shoji, Shuichi [Nano-Science and Nano-Engineering, Waseda University, 3-4-1 Okubo, Shinjuku, Tokyo 169-8555 (Japan); Mizuno, Jun [JST, ERATO, Adachi Molecular Exciton Engineering Project, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Research Organization for Nano and Life Innovation, Waseda University, 513 Waseda Tsurumaki-cho, Shinjuku, Tokyo 162-0041 (Japan)

    2015-10-21

    We developed organic light-emitting diodes (OLEDs) with nanopatterned current flow regions using electron-beam lithography with the aim of suppressing singlet–polaron annihilation (SPA). Nanopatterns composed of lines and circles were used in the current flow regions of nano-line and nano-dot OLEDs, respectively. Excitons partially escape from the current flow regions where SPA takes place. As such, current densities where external quantum efficiencies were half of their initial values (J{sub 0}) increased as line width and circle diameter were decreased to close to the exciton diffusion length. Circles were more efficient at enhancing exciton escape and increasing J{sub 0} than lines. The J{sub 0} increase in the nano-dot OLEDs containing nanopatterned circles with a diameter of 50 nm was approximately 41-fold that of a conventional OLED with a current flow region of 4 mm{sup 2}. The dependence of J{sub 0} on the size and shape of the nanopatterns was well explained by an SPA model that considered exciton diffusion. Nanopatterning of OLEDs is a feasible method of obtaining large J{sub 0}.

  18. Astigmatism-free high-brightness 1060 nm edge-emitting lasers with narrow circular beam profile.

    Science.gov (United States)

    Miah, Md Jarez; Kalosha, Vladimir P; Bimberg, Dieter; Pohl, Johannes; Weyers, Markus

    2016-12-26

    1060 nm high-brightness vertical broad-area edge-emitting lasers providing anastigmatic high optical power into a narrow circular beam profile are demonstrated. Ridge-waveguide (RW) lasers yield record 2.2 W single-transverse mode power in the 1060-nm wavelength range under continuous-wave (cw) operation at room temperature with excellent beam quality factor M2 ≤ 2. Independent of operating current the astigmatism is only 2.5 µm. 3 mm long broad-area (BA) lasers produce a θvert as narrow as 9° full width at half maximum, which agrees well with our simulation results, being insensitive to drive current. 5 mm long BA lasers deliver highest ever reported cw 12 W multimode output power among lasers showing θvert <10° in the 1060-nm wavelength range. The emitted laser beams from both RW and BA lasers show a perfect circular shape with ≤10° divergence angle at record 2.1 W and 4.2 W cw-mode output power, respectively.

  19. Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

    Science.gov (United States)

    Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

    2015-12-01

    Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

  20. Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

    NARCIS (Netherlands)

    Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

    2006-01-01

    A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

  1. Analysis and Design of Improved Weighted Average Current Control Strategy for LCL-Type Grid-Connected Inverters

    DEFF Research Database (Denmark)

    Han, Yang; Li, Zipeng; Yang, Ping

    2017-01-01

    The LCL grid-connected inverter has the ability to attenuate the high-frequency current harmonics. However, the inherent resonance of the LCL filter affects the system stability significantly. To damp the resonance effect, the dual-loop current control can be used to stabilize the system. The grid...... Control Strategy for LCL-Type Grid-Connected Inverters. Available from: https://www.researchgate.net/publication/313734269_Analysis_and_Design_of_Improved_Weighted_Average_Current_Control_Strategy_for_LCL-Type_Grid-Connected_Inverters [accessed Apr 20, 2017]....... current plus capacitor current feedback system is widely used for its better transient response and high robustness against the grid impedance variations. While the weighted average current (WAC) feedback scheme is capable to provide a wider bandwidth at higher frequencies but show poor stability...

  2. Effects of a highly Si-doped GaN current spreading layer at the n+-GaN/multi-quantum-well interface on InGaN/GaN blue-light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, C. S.; Cho, H. K.; Choi, R. J.; Hahn, Y. B.; Lee, H. J.; Hong, C. H.

    2004-01-01

    Highly Si-doped GaN thin current spreading layer (CSL) with various carrier concentrations were inserted before the n + -GaN/multi-quantum-well (MQW) interface controlled by the growth rate and the modulated Si-doping in InGaN/GaN blue light-emitting diodes (LEDs), and their effects were investigated by using capacitance-voltage (C-V), current-voltage (I-V), and output power measurements. The LEDs with a highly Si-doped CSL show enhanced I-V characteristics and increased output power with increasing carrier concentration up to some critical point in the CSL. This means that proper high Si-doping in some limited area before the interface may enhance the device performance through the current spreading effect.

  3. High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn; Xu, Ying; Zhao, Xiaofei; Cheng, Fan [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Huang, Wei, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, 210023 Nanjing (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Technology, Nanjing 211816 (China)

    2014-04-15

    Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range of 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.

  4. Current path in light emitting diodes based on nanowire ensembles

    International Nuclear Information System (INIS)

    Limbach, F; Hauswald, C; Lähnemann, J; Wölz, M; Brandt, O; Trampert, A; Hanke, M; Jahn, U; Calarco, R; Geelhaar, L; Riechert, H

    2012-01-01

    Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced current analysis, cathodoluminescence as well as biased μ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In, Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect. (paper)

  5. Investigation of effective base transit time and current gain modulation of light-emitting transistors under different ambient temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Hao-Hsiang; Tu, Wen-Chung; Wang, Hsiao-Lun [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China); Wu, Chao-Hsin, E-mail: chaohsinwu@ntu.edu.tw [Graduate Institute of Photonics and Optoelectronics, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei 106, Taiwan (China); Graduate Institute of Electronics Engineering, National Taiwan University, 1, Roosevelt Road, Sec. 4, Taipei106, Taiwan (China)

    2014-11-03

    In this report, the modulation of current gain of InGaP/GaAs light-emitting transistors under different ambient temperatures are measured and analyzed using thermionic emission model of quantum well embedded in the transistor base region. Minority carriers captured by quantum wells gain more energy at high temperatures and escape from quantum wells resulting in an increase of current gain and lower optical output, resulting in different I-V characteristics from conventional heterojunction bipolar transistors. The effect of the smaller thermionic lifetime thus reduces the effective base transit time of transistors at high temperatures. The unique current gain enhancement of 27.61% is achieved when operation temperature increase from 28 to 85 °C.

  6. Average current is better than peak current as therapeutic dosage for biphasic waveforms in a ventricular fibrillation pig model of cardiac arrest.

    Science.gov (United States)

    Chen, Bihua; Yu, Tao; Ristagno, Giuseppe; Quan, Weilun; Li, Yongqin

    2014-10-01

    Defibrillation current has been shown to be a clinically more relevant dosing unit than energy. However, the effects of average and peak current in determining shock outcome are still undetermined. The aim of this study was to investigate the relationship between average current, peak current and defibrillation success when different biphasic waveforms were employed. Ventricular fibrillation (VF) was electrically induced in 22 domestic male pigs. Animals were then randomized to receive defibrillation using one of two different biphasic waveforms. A grouped up-and-down defibrillation threshold-testing protocol was used to maintain the average success rate of 50% in the neighborhood. In 14 animals (Study A), defibrillations were accomplished with either biphasic truncated exponential (BTE) or rectilinear biphasic waveforms. In eight animals (Study B), shocks were delivered using two BTE waveforms that had identical peak current but different waveform durations. Both average and peak currents were associated with defibrillation success when BTE and rectilinear waveforms were investigated. However, when pathway impedance was less than 90Ω for the BTE waveform, bivariate correlation coefficient was 0.36 (p=0.001) for the average current, but only 0.21 (p=0.06) for the peak current in Study A. In Study B, a high defibrillation success (67.9% vs. 38.8%, pcurrent (14.9±2.1A vs. 13.5±1.7A, pcurrent unchanged. In this porcine model of VF, average current was better than peak current to be an adequate parameter to describe the therapeutic dosage when biphasic defibrillation waveforms were used. The institutional protocol number: P0805. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  7. Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Bergbauer, Werner [OSRAM Opto Semiconductors GmbH, Regensburg (Germany); FH Deggendorf (Germany); Laubsch, Ansgar; Peter, Matthias; Mayer, Tobias; Bader, Stefan; Oberschmid, Raimund; Hahn, Berthold [OSRAM Opto Semiconductors GmbH, Regensburg (Germany); Benstetter, Guenther [FH Deggendorf (Germany)

    2008-07-01

    As the efficiency and the luminous flux have been increased enormously in the last few years, today Light Emitting Diodes (LEDs) are even pushed to applications like general lighting and Home Cinema Projection. Still, InGaN/GaN heterostructure based LEDs suffer from loss-mechanisms like non-radiative defect and Auger recombination, carrier leakage and piezo-field induced carrier separation. To optimize the high current efficiency we evaluated the benefit of Multiple Quantum Well (MQW) compared to Single Quantum Well (SQW) LEDs. Temperature dependent electroluminescence of colour-coded structures with different Indium content in certain Quantum Wells was measured. The experiments demonstrated a strong temperature and current dependence of the MQW operation. The comparison between different LED structures showed effectively the increased LED performance of those structures which operate with a well adjusted MQW active area. Due to the enhanced carrier distribution in the high current range, these LEDs show a higher light output and additionally a reduced wavelength shift.

  8. Temperature and current dependent electroluminescence measurements on colour-coded multiple quantum well light emitting diodes

    International Nuclear Information System (INIS)

    Bergbauer, Werner; Laubsch, Ansgar; Peter, Matthias; Mayer, Tobias; Bader, Stefan; Oberschmid, Raimund; Hahn, Berthold; Benstetter, Guenther

    2008-01-01

    As the efficiency and the luminous flux have been increased enormously in the last few years, today Light Emitting Diodes (LEDs) are even pushed to applications like general lighting and Home Cinema Projection. Still, InGaN/GaN heterostructure based LEDs suffer from loss-mechanisms like non-radiative defect and Auger recombination, carrier leakage and piezo-field induced carrier separation. To optimize the high current efficiency we evaluated the benefit of Multiple Quantum Well (MQW) compared to Single Quantum Well (SQW) LEDs. Temperature dependent electroluminescence of colour-coded structures with different Indium content in certain Quantum Wells was measured. The experiments demonstrated a strong temperature and current dependence of the MQW operation. The comparison between different LED structures showed effectively the increased LED performance of those structures which operate with a well adjusted MQW active area. Due to the enhanced carrier distribution in the high current range, these LEDs show a higher light output and additionally a reduced wavelength shift

  9. Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

    Science.gov (United States)

    Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

    2017-06-01

    Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.

  10. Ion beams from high-current PF facilities

    Energy Technology Data Exchange (ETDEWEB)

    Sadowski, M [Soltan Inst. for Nuclear Studies, Otwock-Swierk (Poland)

    1997-12-31

    Pulsed beams of fast deuterons and impurity or admixture ions emitted from high-current PF-type facilities operated in different laboratories are dealt with. A short comparative analysis of time-integrated and time-resolved studies is presented. Particular attention is paid to the microstructure of such ion beams, and to the verification of some theoretical models. (author). 5 figs., 19 refs.

  11. Radiation of transient high-current arcs: energy measurements in the optical range

    International Nuclear Information System (INIS)

    Bauchire, J M; Hong, D; Rabat, H; Riquel, G

    2012-01-01

    When no protection is used, the radiation emitted by a high-power electric arc can be dangerous for the eyes and the skin of a person. To ensure effective protection, it is first necessary to know the energy emitted by such arcs. The aim of our work was to experimentally determine the energy emitted by high-current (from 4 to 40 kA) transient arcs, for two different (10 cm and 2 m) lengths and for electrodes in copper or steel. These experiments enabled the radiative energy of the arcs to be quantified and also showed the influence of metal vapors in the spectral distribution of the radiation.

  12. High-quality vertical light emitting diodes fabrication by mechanical lift-off technique

    Science.gov (United States)

    Tu, Po-Min; Hsu, Shih-Chieh; Chang, Chun-Yen

    2011-10-01

    We report the fabrication of mechanical lift-off high quality thin GaN with Hexagonal Inversed Pyramid (HIP) structures for vertical light emitting diodes (V-LEDs). The HIP structures were formed at the GaN/sapphire substrate interface under high temperature during KOH wet etching process. The average threading dislocation density (TDD) was estimated by transmission electron microscopy (TEM) and found the reduction from 2×109 to 1×108 cm-2. Raman spectroscopy analysis revealed that the compressive stress of GaN epilayer was effectively relieved in the thin-GaN LED with HIP structures. Finally, the mechanical lift-off process is claimed to be successful by using the HIP structures as a sacrificial layer during wafer bonding process.

  13. Blue emitting organic semiconductors under high pressure

    DEFF Research Database (Denmark)

    Knaapila, Matti; Guha, Suchismita

    2016-01-01

    This review describes essential optical and emerging structural experiments that use high GPa range hydrostatic pressure to probe physical phenomena in blue-emitting organic semiconductors including π-conjugated polyfluorene and related compounds. The work emphasizes molecular structure and inter......This review describes essential optical and emerging structural experiments that use high GPa range hydrostatic pressure to probe physical phenomena in blue-emitting organic semiconductors including π-conjugated polyfluorene and related compounds. The work emphasizes molecular structure...... and intermolecular self-organization that typically determine transport and optical emission in π-conjugated oligomers and polymers. In this context, hydrostatic pressure through diamond anvil cells has proven to be an elegant tool to control structure and interactions without chemical intervention. This has been...... and intermolecular interactions on optical excitations, electron–phonon interaction, and changes in backbone conformations. This picture is connected to the optical high pressure studies of other π-conjugated systems and emerging x-ray scattering experiments from polyfluorenes which provides a structure-property map...

  14. Choice of initial operating parameters for high average current linear accelerators

    International Nuclear Information System (INIS)

    Batchelor, K.

    1976-01-01

    In designing an accelerator for high currents it is evident that beam losses in the machine must be minimized, which implies well matched beams, and that adequate acceptance under severe space charge conditions must be met. This paper investigates the input parameters to an Alvarez type drift-tube accelerator resulting from such factors

  15. High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

    International Nuclear Information System (INIS)

    Miao Yan-Qin; Zhang Ai-Qin; Li Yuan-Hao; Wang Hua; Jia Hu-Sheng; Liu Xu-Guang; Gao Zhi-Xiang; Tsuboi Taijuf

    2015-01-01

    Levofloxacin (LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes (OLEDs). In this paper, the fabricated white OLED contains a 452-nm blue emitting layer (thickness of 30 nm) with 1 wt% LOFX doped in CBP (4,4’-bis(carbazol-9-yl)biphenyl) host and a 584-nm orange emitting layer (thickness of 10 nm) with 0.8 wt% DCJTB (4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7, 7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran) doped in CBP, which are separated by a 20-nm-thick buffer layer of TPBi (2,2’,2”-(benzene-1,3,5-triyl)-tri(1-phenyl-1H-benzimidazole). A high color rendering index (CRI) of 84.5 and CIE chromaticity coordinates of (0.33, 0.32), which is close to ideal white emission CIE (0.333, 0.333), are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs. (paper)

  16. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    Energy Technology Data Exchange (ETDEWEB)

    Prevosto, L.; Mancinelli, B. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Kelly, H. [Grupo de Descargas Eléctricas, Departamento Ing. Electromecánica, Facultad Regional Venado Tuerto (UTN), Laprida 651, Venado Tuerto (2600) Santa Fe (Argentina); Instituto de Física del Plasma (CONICET), Departamento de Física, Facultad de Ciencias Exactas y Naturales (UBA) Ciudad Universitaria Pab. I, 1428 Buenos Aires (Argentina)

    2013-12-15

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  17. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: Analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe

    International Nuclear Information System (INIS)

    Prevosto, L.; Mancinelli, B.; Kelly, H.

    2013-01-01

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core

  18. Langmuir probe measurements in a time-fluctuating-highly ionized non-equilibrium cutting arc: analysis of the electron retarding part of the time-averaged current-voltage characteristic of the probe.

    Science.gov (United States)

    Prevosto, L; Kelly, H; Mancinelli, B

    2013-12-01

    This work describes the application of Langmuir probe diagnostics to the measurement of the electron temperature in a time-fluctuating-highly ionized, non-equilibrium cutting arc. The electron retarding part of the time-averaged current-voltage characteristic of the probe was analysed, assuming that the standard exponential expression describing the electron current to the probe in collision-free plasmas can be applied under the investigated conditions. A procedure is described which allows the determination of the errors introduced in time-averaged probe data due to small-amplitude plasma fluctuations. It was found that the experimental points can be gathered into two well defined groups allowing defining two quite different averaged electron temperature values. In the low-current region the averaged characteristic was not significantly disturbed by the fluctuations and can reliably be used to obtain the actual value of the averaged electron temperature. In particular, an averaged electron temperature of 0.98 ± 0.07 eV (= 11400 ± 800 K) was found for the central core of the arc (30 A) at 3.5 mm downstream from the nozzle exit. This average included not only a time-average over the time fluctuations but also a spatial-average along the probe collecting length. The fitting of the high-current region of the characteristic using such electron temperature value together with the corrections given by the fluctuation analysis showed a relevant departure of local thermal equilibrium in the arc core.

  19. Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

    Science.gov (United States)

    Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

    2016-05-01

    Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

  20. A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.

    Science.gov (United States)

    Shi, Yifei; Wu, Wen; Dong, Hua; Li, Guangru; Xi, Kai; Divitini, Giorgio; Ran, Chenxin; Yuan, Fang; Zhang, Min; Jiao, Bo; Hou, Xun; Wu, Zhaoxin

    2018-06-01

    All present designs of perovskite light-emitting diodes (PeLEDs) stem from polymer light-emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, "insulator-perovskite-insulator" (IPI) architecture tailored to PeLEDs. As examples of FAPbBr 3 and MAPbBr 3 , it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr 3 , a 30-fold enhancement in the current efficiency of IPI-structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole-injection layer is achieved-from 0.64 to 20.3 cd A -1 -while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr 3 , compared with the control device, both current efficiency and lifetime of IPI-structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A -1 and 96 h. This IPI architecture represents a novel strategy for the design of light-emitting didoes based on various perovskites with high efficiencies and stabilities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Highly efficient tandem organic light-emitting devices employing an easily fabricated charge generation unit

    Science.gov (United States)

    Yang, Huishan; Yu, Yaoyao; Wu, Lishuang; Qu, Biao; Lin, Wenyan; Yu, Ye; Wu, Zhijun; Xie, Wenfa

    2018-02-01

    We have realized highly efficient tandem organic light-emitting devices (OLEDs) employing an easily fabricated charge generation unit (CGU) combining 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile with ultrathin bilayers of CsN3 and Al. The charge generation and separation processes of the CGU have been demonstrated by studying the differences in the current density-voltage characteristics of external-carrier-excluding devices. At high luminances of 1000 and 10000 cd/m2, the current efficiencies of the phosphorescent tandem device are about 2.2- and 2.3-fold those of the corresponding single-unit device, respectively. Simultaneously, an efficient tandem white OLED exhibiting high color stability and warm white emission has also been fabricated.

  2. High current induction linacs

    International Nuclear Information System (INIS)

    Barletta, W.; Faltens, A.; Henestroza, E.; Lee, E.

    1994-07-01

    Induction linacs are among the most powerful accelerators in existence. They have accelerated electron bunches of several kiloamperes, and are being investigated as drivers for heavy ion driven inertial confinement fusion (HIF), which requires peak beam currents of kiloamperes and average beam powers of some tens of megawatts. The requirement for waste transmutation with an 800 MeV proton or deuteron beam with an average current of 50 mA and an average power of 40 MW lies midway between the electron machines and the heavy ion machines in overall difficulty. Much of the technology and understanding of beam physics carries over from the previous machines to the new requirements. The induction linac allows use of a very large beam aperture, which may turn out to be crucial to reducing beam loss and machine activation from the beam halo. The major issues addressed here are transport of high intensity beams, availability of sources, efficiency of acceleration, and the state of the needed technology for the waste treatment application. Because of the transformer-like action of an induction core and the accompanying magnetizing current, induction linacs make the most economic sense and have the highest efficiencies with large beam currents. Based on present understanding of beam transport limits, induction core magnetizing current requirements, and pulse modulators, the efficiencies could be very high. The study of beam transport at high intensities has been the major activity of the HIF community. Beam transport and sources are limiting at low energies but are not significant constraints at the higher energies. As will be shown, the proton beams will be space-charge-dominated, for which the emittance has only a minor effect on the overall beam diameter but does determine the density falloff at the beam edge

  3. White organic light-emitting devices with high color purity and stability

    Science.gov (United States)

    Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

    2014-04-01

    A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq3(20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm-2 at the applied voltage of 13.4 V and Commission International de 1‧Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIEx, y = 0.0171, 0.0167; corresponding Δu‧v‧ = 0.0119) when the current density increases from 10 to 100 mA cm-2. It reveals that the emissive dopant Rb acts as charge traps to improve electron-hole balance, provides sites for electron-hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates.

  4. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  5. White organic light-emitting devices with high color purity and stability

    International Nuclear Information System (INIS)

    Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

    2014-01-01

    A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq 3 (20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm −2  at the applied voltage of 13.4 V and Commission International de 1′Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIE x, y = 0.0171, 0.0167; corresponding Δu′v′ = 0.0119) when the current density increases from 10 to 100 mA cm −2 . It reveals that the emissive dopant Rb acts as charge traps to improve electron–hole balance, provides sites for electron–hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates. (paper)

  6. High performance inkjet printed phosphorescent organic light emitting diodes based on small molecules commonly used in vacuum processes

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Sung-Hoon [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Hyong-Jun, E-mail: hkim@kongju.ac.kr [Department of Chemical Engineering, Kongju National University, Cheonan, 330-717 (Korea, Republic of)

    2012-09-30

    High efficiency phosphorescent organic light emitting diodes (OLEDs) are realized by inkjet printing based on small molecules commonly used in vacuum processes in spite of the limitation of the limited solubility. The OLEDs used the inkjet printed 5 wt.% tris(2-phenylpyridine)iridium(III) (Ir(ppy){sub 3}) doped in 4,4 Prime -Bis(carbazol-9-yl)biphenyl (CBP) as the light emitting layer on various small molecule based hole transporting layers, which are widely used in the fabrication of OLEDs by vacuum processes. The OLEDs resulted in the high power and the external quantum efficiencies of 29.9 lm/W and 11.7%, respectively, by inkjet printing the CBP:Ir(ppy){sub 3} on a 40 nm thick 4,4 Prime ,4 Double-Prime -tris(carbazol-9-yl)triphenylamine layer. The performance was very close to a vacuum deposited device with a similar structure. - Highlights: Black-Right-Pointing-Pointer Effective inkjet printed organic light emitting diode (OLED) technique is explored. Black-Right-Pointing-Pointer Solution process on commonly used hole transporting material (HTM) is demonstrated. Black-Right-Pointing-Pointer Triplet energy overlap of HTM and emitting material is the key to the performance. Black-Right-Pointing-Pointer Simple inkjet printed OLED provides the high current efficiency of 40 cd/A.

  7. High current polarized electron source

    Science.gov (United States)

    Suleiman, R.; Adderley, P.; Grames, J.; Hansknecht, J.; Poelker, M.; Stutzman, M.

    2018-05-01

    Jefferson Lab operates two DC high voltage GaAs photoguns with compact inverted insulators. One photogun provides the polarized electron beam at the Continuous Electron Beam Accelerator Facility (CEBAF) up to 200 µA. The other gun is used for high average current photocathode lifetime studies at a dedicated test facility up to 4 mA of polarized beam and 10 mA of un-polarized beam. GaAs-based photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed facilities that must operate in excess of tens of mA of polarized average current. This contribution describes techniques to maintain good vacuum while delivering high beam currents, and techniques that minimize damage due to ion bombardment, the dominant mechanism that reduces photocathode yield. Advantages of higher DC voltage include reduced space-charge emittance growth and the potential for better photocathode lifetime. Highlights of R&D to improve the performance of polarized electron sources and prolong the lifetime of strained-superlattice GaAs are presented.

  8. Simple single-emitting layer hybrid white organic light emitting with high color stability

    Science.gov (United States)

    Nguyen, C.; Lu, Z. H.

    2017-10-01

    Simultaneously achieving a high efficiency and color quality at luminance levels required for solid-state lighting has been difficult for white organic light emitting diodes (OLEDs). Single-emitting layer (SEL) white OLEDs, in particular, exhibit a significant tradeoff between efficiency and color stability. Furthermore, despite the simplicity of SEL white OLEDs being its main advantage, the reported device structures are often complicated by the use of multiple blocking layers. In this paper, we report a highly simplified three-layered white OLED that achieves a low turn-on voltage of 2.7 V, an external quantum efficiency of 18.9% and power efficiency of 30 lm/W at 1000 cd/cm2. This simple white OLED also shows good color quality with a color rendering index of 75, CIE coordinates (0.42, 0.46), and little color shifting at high luminance. The device consists of a SEL sandwiched between a hole transport layer and an electron transport layer. The SEL comprises a thermally activated delayer fluorescent molecule having dual functions as a blue emitter and as a host for other lower energy emitters. The improved color stability and efficiency in such a simple device structure is explained as due to the elimination of significant energy barriers at various organic-organic interfaces in the traditional devices having multiple blocking layers.

  9. Electroluminescence enhancement for near-ultraviolet light emitting diodes with graphene/AZO-based current spreading layers

    DEFF Research Database (Denmark)

    Lin, Li; Ou, Yiyu; Zhu, Xiaolong

    LEDs) have attracted significant research interest due to their intensive applications in various areas where indium tin oxide (ITO) is one of the most widely employed transparent conductive materials for NUV LEDs. Compared to ITO, indium-free aluminum-doped zinc oxide (AZO) has similar electrical......Near-ultraviolet light emitting diodes with different aluminum-doped zinc oxide-based current spreading layers were fabricated and electroluminescence (EL) was compared. A 170% EL enhancement was achieved by using a graphene-based interlayer. GaN-based near-ultraviolet light emitting diodes (NUV...... with a new type of current spreading layer (CSL) which combines AZO and a single-layer graphene (SLG) as an effective transparent CSL [1]. In the present work, LEDs with solo AZO CSL in Fig.1(a) and SLG/Ni/AZO-based CSL in Fig.1(b) were both fabricated for EL comparison. Standard mesa fabrication including...

  10. High-efficiency white organic light-emitting devices with a non-doped yellow phosphorescent emissive layer

    Energy Technology Data Exchange (ETDEWEB)

    Zhao Juan; Yu Junsheng, E-mail: jsyu@uestc.edu.cn; Hu Xiao; Hou Menghan; Jiang Yadong

    2012-03-30

    Highly efficient phosphorescent white organic light-emitting devices (PHWOLEDs) with a simple structure of ITO/TAPC (40 nm)/mCP:FIrpic (20 nm, x wt.%)/bis[2-(4-tertbutylphenyl)benzothiazolato-N,C{sup 2} Prime ] iridium (acetylacetonate) (tbt){sub 2}Ir(acac) (y nm)/Bphen (30 nm)/Mg:Ag (200 nm) have been developed, by inserting a thin layer of non-doped yellow phosphorescent (tbt){sub 2}Ir(acac) between doped blue emitting layer (EML) and electron transporting layer. By changing the doping concentration of the blue EML and the thickness of the non-doped yellow EML, a PHWOLED comprised of higher blue doping concentration and thinner yellow EML achieves a high current efficiency of 31.7 cd/A and Commission Internationale de l'Eclairage coordinates of (0.33, 0.41) at a luminance of 3000 cd/m{sup 2} could be observed. - Highlights: Black-Right-Pointing-Pointer We introduce a simplified architecture for phosphorescent white organic light-emitting device. Black-Right-Pointing-Pointer The key concept of device fabrication is combination of doped blue emissive layer (EML) with non-doped ultra-thin yellow EML. Black-Right-Pointing-Pointer Doping concentration of the blue EML and thickness of the yellow EML are sequentially adjusted. Black-Right-Pointing-Pointer High device performance is achieved due to improved charge carrier balance as well as two parallel emission mechanisms in the EMLs.

  11. Potential for efficient frequency conversion at high average power using solid state nonlinear optical materials

    International Nuclear Information System (INIS)

    Eimerl, D.

    1985-01-01

    High-average-power frequency conversion using solid state nonlinear materials is discussed. Recent laboratory experience and new developments in design concepts show that current technology, a few tens of watts, may be extended by several orders of magnitude. For example, using KD*P, efficient doubling (>70%) of Nd:YAG at average powers approaching 100 KW is possible; and for doubling to the blue or ultraviolet regions, the average power may approach 1 MW. Configurations using segmented apertures permit essentially unlimited scaling of average power. High average power is achieved by configuring the nonlinear material as a set of thin plates with a large ratio of surface area to volume and by cooling the exposed surfaces with a flowing gas. The design and material fabrication of such a harmonic generator are well within current technology

  12. Effect of trapped electrons on the transient current density and luminance of organic light-emitting diode

    Science.gov (United States)

    Lee, Jiun-Haw; Chen, Chia-Hsun; Lin, Bo-Yen; Shih, Yen-Chen; Lin, King-Fu; Wang, Leeyih; Chiu, Tien-Lung; Lin, Chi-Feng

    2018-04-01

    Transient current density and luminance from an organic light-emitting diode (OLED) driven by voltage pulses were investigated. Waveforms with different repetition rate, duty cycle, off-period, and on-period were used to study the injection and transport characteristics of electron and holes in an OLED under pulse operation. It was found that trapped electrons inside the emitting layer (EML) and the electron transporting layer (ETL) material, tris(8-hydroxyquinolate)aluminum (Alq3) helped for attracting the holes into the EML/ETL and reducing the driving voltage, which was further confirmed from the analysis of capacitance-voltage and displacement current measurement. The relaxation time and trapped filling time of the trapped electrons in Alq3 layer were ~200 µs and ~600 µs with 6 V pulse operation, respectively.

  13. Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

    Science.gov (United States)

    Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

    2018-05-01

    We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

  14. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yingjie; Aziz, Hany, E-mail: h2aziz@uwaterloo.ca [Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1 (Canada)

    2014-07-07

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10{sup 5} cd/m{sup 2} is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  15. Very high efficiency phosphorescent organic light-emitting devices by using rough indium tin oxide

    International Nuclear Information System (INIS)

    Zhang, Yingjie; Aziz, Hany

    2014-01-01

    The efficiency of organic light-emitting devices (OLEDs) is shown to significantly depend on the roughness of the indium tin oxide (ITO) anode. By using rougher ITO, light trapped in the ITO/organic wave-guided mode can be efficiently extracted, and a light outcoupling enhancement as high as 40% is achieved. Moreover, contrary to expectations, the lifetime of OLEDs is not affected by ITO roughness. Finally, an OLED employing rough ITO anode that exhibits a current efficiency of 56 cd/A at the remarkably high brightness of 10 5  cd/m 2 is obtained. This represents the highest current efficiency at such high brightness to date for an OLED utilizing an ITO anode, without any external light outcoupling techniques. The results demonstrate the significant efficiency benefits of using ITO with higher roughness in OLEDs.

  16. High average power supercontinuum sources

    Indian Academy of Sciences (India)

    The physical mechanisms and basic experimental techniques for the creation of high average spectral power supercontinuum sources is briefly reviewed. We focus on the use of high-power ytterbium-doped fibre lasers as pump sources, and the use of highly nonlinear photonic crystal fibres as the nonlinear medium.

  17. High Intensity Organic Light-emitting Diodes

    Science.gov (United States)

    Qi, Xiangfei

    This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

  18. HIGH AVERAGE POWER OPTICAL FEL AMPLIFIERS

    International Nuclear Information System (INIS)

    2005-01-01

    Historically, the first demonstration of the optical FEL was in an amplifier configuration at Stanford University [l]. There were other notable instances of amplifying a seed laser, such as the LLNL PALADIN amplifier [2] and the BNL ATF High-Gain Harmonic Generation FEL [3]. However, for the most part FELs are operated as oscillators or self amplified spontaneous emission devices. Yet, in wavelength regimes where a conventional laser seed can be used, the FEL can be used as an amplifier. One promising application is for very high average power generation, for instance FEL's with average power of 100 kW or more. The high electron beam power, high brightness and high efficiency that can be achieved with photoinjectors and superconducting Energy Recovery Linacs (ERL) combine well with the high-gain FEL amplifier to produce unprecedented average power FELs. This combination has a number of advantages. In particular, we show that for a given FEL power, an FEL amplifier can introduce lower energy spread in the beam as compared to a traditional oscillator. This properly gives the ERL based FEL amplifier a great wall-plug to optical power efficiency advantage. The optics for an amplifier is simple and compact. In addition to the general features of the high average power FEL amplifier, we will look at a 100 kW class FEL amplifier is being designed to operate on the 0.5 ampere Energy Recovery Linac which is under construction at Brookhaven National Laboratory's Collider-Accelerator Department

  19. How to emit a high-power electron beam from a magnetospheric spacecraft?

    Science.gov (United States)

    Delzanno, G. L.; Lucco Castello, F.; Borovsky, J.; Miars, G.; Leon, O.; Gilchrist, B. E.

    2017-12-01

    The idea of using a high-power electron beam to actively probe magnetic-field-line connectivity in space has been discussed since the 1970's. It could solve longstanding questions in magnetospheric/ionospheric physics by establishing causality between phenomena occurring in the magnetosphere and their image in the ionosphere. However, this idea has never been realized onboard a magnetospheric spacecraft because the tenuous magnetospheric plasma cannot provide the return current necessary to keep the charging of the spacecraft under control. Recently, Delzanno et al. [1] have proposed a spacecraft-charging mitigation scheme to enable the emission of a high-power electron beam from a magnetospheric spacecraft. It is based on the plasma contactor, i.e. a high-density neutral plasma emitted prior to and with the electron beam. The contactor acts as an ion emitter (not as an electron collector, as previously thought): a high ion current can be emitted off the quasi-spherical contactor surface, without the strong space-charge limitations typical of planar ion beams, and the electron-beam current can be successfully compensated. In this work, we will discuss our theoretical/simulation effort to improve the understanding of contactor-based ion emission. First, we will present a simple mathematical model useful for the interpretation of the results of [1]. The model is in spherical geometry and the contactor dynamics is described by only two surfaces (its quasi-neutral surface and the front of the outermost ions). It captures the results of self-consistent Particle-In-Cell (PIC) simulations with good accuracy and highlights the physics behind the charge-mitigation scheme clearly. PIC simulations connecting the 1D model to the actual geometry of the problem will be presented to obtain the scaling of the spacecraft potential varying contactor emission area. Finally, results for conditions relevant to an actual mission will also be discussed. [1] G. L. Delzanno, J. E. Borovsky

  20. Current Molecular Imaging Positron Emitting Radiotracers in Oncology

    International Nuclear Information System (INIS)

    Zhu, Aizhi; Shim, Hyunsuk

    2011-01-01

    Molecular imaging is one of the fastest growing areas of medical imaging. Positron emission tomography has been widely used in the clinical management of patients with cancer. Nuclear imaging provides biological information at the cellular, subcellular, and molecular level in living subjects with noninvasive procedures. In particular, PET imaging takes advantage of traditional diagnostic imaging techniques and introduces positron emitting probes to determine the expression of indicative molecular targets at different stages of cancer. 18F fluorodeoxyglucose ( 18F FDG), the only FDA approved oncological PET tracer, has been widely utilized in cancer diagnosis, staging, restaging, and even monitoring response to therapy; however, 18F FDG is not a tumor specific PET tracer. Over the last decade, many promising tumor specific PET tracer. Over the last decade, many promising tumor specific PET tracers have been developed and evaluated in preclinical and clinical studies. This review provides an overview of the current non 18F FDG PET tracers in oncology that have been developed based on tumor characteristics such as increased metabolism, hyperproliferation, angiogenesis, hypoxia, apoptosis, and tumor specific antigens and surface receptors

  1. Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes

    International Nuclear Information System (INIS)

    Kim, Kyu-Sang; Han, Dong-Pyo; Kim, Hyun-Sung; Shim, Jong-In

    2014-01-01

    Two kinds of green InGaN light emitting diodes (LEDs) have been investigated in order to understand the different slopes in logarithmic light output power-current (L-I) curves. Through the analysis of the carrier rate equation and by considering the carrier density-dependent the injection efficiency into quantum wells, the slopes of the logarithmic L-I curves can be more rigorously understood. The low current level, two as the tunneling current is initially dominant. The high current level beyond the peak of the external quantum efficiency (EQE) diminishes below one as the carrier overflow becomes dominant. In addition, the normalized carrier injection efficiency can be obtained by analyzing the slopes of the logarithmic L-I curves. The carrier injection efficiency decreases after the EQE peak of the InGaN LEDs, determined from the analysis of the slopes of the logarithmic L-I curves

  2. High color rendering index white organic light-emitting diode using levofloxacin as blue emitter

    Science.gov (United States)

    Miao, Yan-Qin; Gao, Zhi-Xiang; Zhang, Ai-Qin; Li, Yuan-Hao; Wang, Hua; Jia, Hu-Sheng; Liu, Xu-Guang; Tsuboi, Taijuf

    2015-05-01

    Levofloxacin (LOFX), which is well-known as an antibiotic medicament, was shown to be useful as a 452-nm blue emitter for white organic light-emitting diodes (OLEDs). In this paper, the fabricated white OLED contains a 452-nm blue emitting layer (thickness of 30 nm) with 1 wt% LOFX doped in CBP (4,4’-bis(carbazol-9-yl)biphenyl) host and a 584-nm orange emitting layer (thickness of 10 nm) with 0.8 wt% DCJTB (4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran) doped in CBP, which are separated by a 20-nm-thick buffer layer of TPBi (2,2’,2”-(benzene-1,3,5-triyl)-tri(1-phenyl-1H-benzimidazole). A high color rendering index (CRI) of 84.5 and CIE chromaticity coordinates of (0.33, 0.32), which is close to ideal white emission CIE (0.333, 0.333), are obtained at a bias voltage of 14 V. Taking into account that LOFX is less expensive and the synthesis and purification technologies of LOFX are mature, these results indicate that blue fluorescence emitting LOFX is useful for applications to white OLEDs although the maximum current efficiency and luminance are not high. The present paper is expected to become a milestone to using medical drug materials for OLEDs. Project supported by the Program for New Century Excellent Talents in University of Ministry of Education of China (Grant No. NCET-13-0927), the International Science & Technology Cooperation Program of China (Grant No. 2012DFR50460), the National Natural Science Foundation of China (Grant Nos. 21101111 and 61274056), and the Shanxi Provincial Key Innovative Research Team in Science and Technology, China (Grant No. 2012041011).

  3. Depth-averaged instantaneous currents in a tidally dominated shelf sea from glider observations

    Science.gov (United States)

    Merckelbach, Lucas

    2016-12-01

    Ocean gliders have become ubiquitous observation platforms in the ocean in recent years. They are also increasingly used in coastal environments. The coastal observatory system COSYNA has pioneered the use of gliders in the North Sea, a shallow tidally energetic shelf sea. For operational reasons, the gliders operated in the North Sea are programmed to resurface every 3-5 h. The glider's dead-reckoning algorithm yields depth-averaged currents, averaged in time over each subsurface interval. Under operational conditions these averaged currents are a poor approximation of the instantaneous tidal current. In this work an algorithm is developed that estimates the instantaneous current (tidal and residual) from glider observations only. The algorithm uses a first-order Butterworth low pass filter to estimate the residual current component, and a Kalman filter based on the linear shallow water equations for the tidal component. A comparison of data from a glider experiment with current data from an acoustic Doppler current profilers deployed nearby shows that the standard deviations for the east and north current components are better than 7 cm s-1 in near-real-time mode and improve to better than 6 cm s-1 in delayed mode, where the filters can be run forward and backward. In the near-real-time mode the algorithm provides estimates of the currents that the glider is expected to encounter during its next few dives. Combined with a behavioural and dynamic model of the glider, this yields predicted trajectories, the information of which is incorporated in warning messages issued to ships by the (German) authorities. In delayed mode the algorithm produces useful estimates of the depth-averaged currents, which can be used in (process-based) analyses in case no other source of measured current information is available.

  4. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    Science.gov (United States)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  5. Sedimentological regimes for turbidity currents: Depth-averaged theory

    Science.gov (United States)

    Halsey, Thomas C.; Kumar, Amit; Perillo, Mauricio M.

    2017-07-01

    Turbidity currents are one of the most significant means by which sediment is moved from the continents into the deep ocean; their properties are interesting both as elements of the global sediment cycle and due to their role in contributing to the formation of deep water oil and gas reservoirs. One of the simplest models of the dynamics of turbidity current flow was introduced three decades ago, and is based on depth-averaging of the fluid mechanical equations governing the turbulent gravity-driven flow of relatively dilute turbidity currents. We examine the sedimentological regimes of a simplified version of this model, focusing on the role of the Richardson number Ri [dimensionless inertia] and Rouse number Ro [dimensionless sedimentation velocity] in determining whether a current is net depositional or net erosional. We find that for large Rouse numbers, the currents are strongly net depositional due to the disappearance of local equilibria between erosion and deposition. At lower Rouse numbers, the Richardson number also plays a role in determining the degree of erosion versus deposition. The currents become more erosive at lower values of the product Ro × Ri, due to the effect of clear water entrainment. At higher values of this product, the turbulence becomes insufficient to maintain the sediment in suspension, as first pointed out by Knapp and Bagnold. We speculate on the potential for two-layer solutions in this insufficiently turbulent regime, which would comprise substantial bedload flow with an overlying turbidity current.

  6. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

    2015-01-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  7. AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

    KAUST Repository

    Yan, Jianchang

    2015-03-01

    In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

  8. Power output and efficiency of beta-emitting microspheres

    International Nuclear Information System (INIS)

    Cheneler, David; Ward, Michael

    2015-01-01

    Current standard methods to calculate the dose of radiation emitted during medical applications by beta-minus emitting microspheres rely on an over-simplistic formalism. This formalism is a function of the average activity of the radioisotope used and the physiological dimensions of the patient only. It neglects the variation in energy of the emitted beta particle due to self-attenuation, or self-absorption, effects related to the finite size of the sphere. Here it is assumed the sphere is comprised of a pure radioisotope with beta particles being emitted isotropically throughout the material. The full initial possible kinetic energy distribution of a beta particle is taken into account as well as the energy losses due to scattering by other atoms in the microsphere and bremsstrahlung radiation. By combining Longmire’s theory of the mean forward range of charged particles and the Rayleigh distribution to take into account the statistical nature of scattering and energy straggling, the linear attenuation, or self-absorption, coefficient for beta-emitting radioisotopes has been deduced. By analogy with gamma radiation transport in spheres, this result was used to calculate the rate of energy emitted by a beta-emitting microsphere and its efficiency. Comparisons to standard point dose kernel formulations generated using Monte Carlo data show the efficacy of the proposed method. Yttrium-90 is used as a specific example throughout, as a medically significant radioisotope, frequently used in radiation therapy for treating cancer. - Highlights: • Range-energy relationship for the beta particles in yttrium-90 is calculated. • Formalism for the semi-analytical calculation of self-absorption coefficients. • Energy-dependent self-absorption coefficient calculated for yttrium-90. • Flux rate of beta particles from a self-attenuating radioactive sphere is shown. • The efficiency of beta particle emitting radioactive microspheres is calculated

  9. The average angular distribution of emitted particles in multi-step compound processes

    International Nuclear Information System (INIS)

    Bonetti, R.; Carlson, B.V.; Hussein, M.S.; Toledo, A.S. de

    1983-05-01

    A simple model for the differential cross-section that describes the angular distribution of emitted particles in heavy-ion induced multi-step compound reactions, is constructed. It is suggested that through a careful analysis of the deviations of the experimental data from the pure Hauser-Feshbach behaviour may shed light on the physical nature of the pre-compound, heavy-ion configuration. (Author) [pt

  10. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab

    2011-01-01

    peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010

  11. High-Speed Semiconductor Vertical-Cavity Surface-Emitting Lasers for Optical Data-Transmission Systems (Review)

    Science.gov (United States)

    Blokhin, S. A.; Maleev, N. A.; Bobrov, M. A.; Kuzmenkov, A. G.; Sakharov, A. V.; Ustinov, V. M.

    2018-01-01

    The main problems of providing a high-speed operation semiconductor lasers with a vertical microcavity (so-called "vertical-cavity surface-emitting lasers") under amplitude modulation and ways to solve them have been considered. The influence of the internal properties of the radiating active region and the electrical parasitic elements of the equivalent circuit of lasers are discussed. An overview of approaches that lead to an increase of the cutoff parasitic frequency, an increase of the differential gain of the active region, the possibility of the management of mode emission composition and the lifetime of photons in the optical microcavities, and reduction of the influence of thermal effects have been presented. The achieved level of modulation bandwidth of ˜30 GHz is close to the maximum achievable for the classical scheme of the direct-current modulation, which makes it necessary to use a multilevel modulation format to further increase the information capacity of optical channels constructed on the basis of vertical-cavity surface-emitting lasers.

  12. Development of high current electron beam generator

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook [and others

    1997-05-01

    A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs.

  13. Development of high current electron beam generator

    International Nuclear Information System (INIS)

    Lee, Byeong Cheol; Lee, Jong Min; Kim, Sun Kook

    1997-05-01

    A high-current electron beam generator has been developed. The energy and the average current of the electron beam are 2 MeV and 50 mA, respectively. The electron beam generator is composed of an electron gun, RF acceleration cavities, a 260-kW RF generator, electron beam optics components, and control system, etc. The electron beam generator will be used for the development of a millimeter-wave free-electron laser and a high average power infrared free-electron laser. The machine will also be used as a user facility in nuclear industry, environment industry, semiconductor industry, chemical industry, etc. (author). 15 tabs., 85 figs

  14. The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

    Science.gov (United States)

    Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

    2018-02-01

    We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

  15. Highly efficient greenish-blue platinum-based phosphorescent organic light-emitting diodes on a high triplet energy platform

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.; Lu, Z. H., E-mail: zhenghong.lu@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, 184 College St., Toronto, Ontario M5S 3E4 (Canada); Wang, X.; Wang, S., E-mail: wangs@chem.queensu.ca [Department of Chemistry, Queen' s University, 90 Bader Lane, Kingston, Ontario K7L 3N6 (Canada); Yang, C. [Department of Chemistry, Wuhan University, Wuhan 430072 (China)

    2014-04-28

    We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

  16. Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

    2014-09-15

    In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m{sup 2}, driving voltage was 4.4 V, and current density was 2.4 mA/cm{sup 2}. A white OLED component was then manufactured by doping red dopant [Os(bpftz){sub 2}(PPh{sub 2}Me){sub 2}] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE{sub x,y} of (0.31,0.35) at a luminance of 1000 cd/m{sup 2}, with a maximum luminance of 15,600 cd/m{sup 2} at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons.

  17. Blue and white phosphorescent organic light emitting diode performance improvement by confining electrons and holes inside double emitting layers

    International Nuclear Information System (INIS)

    Tsai, Yu-Sheng; Hong, Lin-Ann; Juang, Fuh-Shyang; Chen, Cheng-Yin

    2014-01-01

    In this research, complex emitting layers (EML) were fabricated using TCTA doping hole-transport material in the front half of a bipolar 26DCzPPy as well as PPT doping electron-transport material in the back half of 26DCzPPy. Blue dopant FIrpic was also mixed inside the complex emitting layer to produce a highly efficient blue phosphorescent organic light emitting diode (OLED). The hole and electron injection and carrier recombination rate were effectively increased. The fabricated complex emitting layers exhibited current efficiency of 42 cd/A and power efficiency of 30 lm/W when the luminance was 1000 cd/m 2 , driving voltage was 4.4 V, and current density was 2.4 mA/cm 2 . A white OLED component was then manufactured by doping red dopant [Os(bpftz) 2 (PPh 2 Me) 2 ] (Os) in proper locations. When the Os dopant was doped in between the complex emitting layers, excitons were effectively confined within, increasing the recombination rate and therefore reducing the color shift. The resulting Commission Internationale de L’Eclairage (CIE) coordinates shifted from 4 to 10 V is (Δx=−0.04, Δy=+0.01). The component had a current efficiency of 35.7 cd/A, a power efficiency of 24 lm/W, driving voltage of 4.6 V and a CIE x,y of (0.31,0.35) at a luminance of 1000 cd/m 2 , with a maximum luminance of 15,600 cd/m 2 at 10 V. Attaching an outcoupling enhancement film was applied to increase the luminance efficiency to 30 lm/W. - Highlights: • Used the complex double emitting layers. • Respectively doped hole and electron transport material in the bipolar host. • Electrons and holes are effectively confined within EMLs to produce excitons

  18. Metasurface integrated high energy efficient and high linearly polarized InGaN/GaN light emitting diode.

    Science.gov (United States)

    Wang, Miao; Xu, Fuyang; Lin, Yu; Cao, Bing; Chen, Linghua; Wang, Chinhua; Wang, Jianfeng; Xu, Ke

    2017-07-06

    We proposed and demonstrated an integrated high energy efficient and high linearly polarized InGaN/GaN green LED grown on (0001) oriented sapphire with combined metasurface polarizing converter and polarizer system. It is different from those conventional polarized light emissions generated with plasmonic metallic grating in which at least 50% high energy loss occurs inherently due to high reflection of the transverse electric (TE) component of an electric field. A reflecting metasurface, with a two dimensional elliptic metal cylinder array (EMCA) that functions as a half-wave plate, was integrated at the bottom of a LED such that the back-reflected TE component, that is otherwise lost by a dielectric/metal bi-layered wire grids (DMBiWG) polarizer on the top emitting surface of the LED, can be converted to desired transverse magnetic (TM) polarized emission after reflecting from the metasurface. This significantly enhances the polarized light emission efficiency. Experimental results show that extraction efficiency of the polarized emission can be increased by 40% on average in a wide angle of ±60° compared to that with the naked bottom of sapphire substrate, or 20% compared to reflecting Al film on the bottom of a sapphire substrate. An extinction ratio (ER) of average value 20 dB within an angle of ±60° can be simultaneously obtained directly from an InGaN/GaN LED. Our results show the possibility of simultaneously achieving a high degree of polarization and high polarization extraction efficiency at the integrated device level. This advances the field of GaN LED toward energy efficiency, multi-functional applications in illumination, display, medicine, and light manipulation.

  19. InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

    Science.gov (United States)

    Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

    2017-03-20

    The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm2. Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

  20. Echolocating bats emit a highly directional sonar sound beam in the field

    DEFF Research Database (Denmark)

    Surlykke, Annemarie; Boel Pedersen, Simon; Jakobsen, Lasse

    2009-01-01

    Bats use echolocation or biosonar to navigate and find prey at night. They emit short ultrasonic calls and listen for reflected echoes. The beam width of the calls is central to the function of the sonar, but directionality of echolocation calls has never been measured from bats flying in the wild....... We used a microphone array to record sounds and determine horizontal directionality for echolocation calls of the trawling Daubenton's bat, Myotis daubentonii, flying over a pond in its natural habitat. Myotis daubentonii emitted highly directional calls in the field. Directionality increased...... and directionality can be explained by the simple piston model. The model also suggests that the increase in the emitted intensity in the field is caused by the increased directionality, focusing sound energy in the forward direction. The bat may increase directionality by opening the mouth wider to emit a louder...

  1. Broadband mid-infrared superlattice light-emitting diodes

    Science.gov (United States)

    Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

    2017-05-01

    InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

  2. Econometric modelling of Serbian current account determinants: Jackknife Model Averaging approach

    Directory of Open Access Journals (Sweden)

    Petrović Predrag

    2014-01-01

    Full Text Available This research aims to model Serbian current account determinants for the period Q1 2002 - Q4 2012. Taking into account the majority of relevant determinants, using the Jackknife Model Averaging approach, 48 different models have been estimated, where 1254 equations needed to be estimated and averaged for each of the models. The results of selected representative models indicate moderate persistence of the CA and positive influence of: fiscal balance, oil trade balance, terms of trade, relative income and real effective exchange rates, where we should emphasise: (i a rather strong influence of relative income, (ii the fact that the worsening of oil trade balance results in worsening of other components (probably non-oil trade balance of CA and (iii that the positive influence of terms of trade reveals functionality of the Harberger-Laursen-Metzler effect in Serbia. On the other hand, negative influence is evident in case of: relative economic growth, gross fixed capital formation, net foreign assets and trade openness. What particularly stands out is the strong effect of relative economic growth that, most likely, reveals high citizens' future income growth expectations, which has negative impact on the CA.

  3. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    International Nuclear Information System (INIS)

    Zhou, Shunliang; Wang, Qi; Li, Ming; Lu, Zhiyun; Yu, Junsheng

    2014-01-01

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C 2' ]iridium(III) (acetylacetonate) [(tbpbt) 2 Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt) 2 Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt) 2 Ir(acac) as a self-host orange emitter, indicating that (tbpbt) 2 Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized

  4. Highly efficient and heavily-doped organic light-emitting devices based on an orange phosphorescent iridium complex

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shunliang; Wang, Qi [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China); Li, Ming [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Lu, Zhiyun, E-mail: luzhiyun@scu.edu.cn [College of Chemistry, Sichuan University, Chengdu, 610064 (China); Yu, Junsheng, E-mail: jsyu@uestc.edu.cn [State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054 (China)

    2014-10-15

    Heavily doped and highly efficient phosphorescent organic light-emitting devices (PhOLEDs) had been fabricated by utilizing an orange iridium complex, bis[2-(3′,5′-di-tert-butylbiphenyl-4-yl)benzothiazolato-N,C{sup 2'}]iridium(III) (acetylacetonate) [(tbpbt){sub 2}Ir(acac)], as a phosphor. When the doping concentration of [(tbpbt){sub 2}Ir(acac)] reached as high as 15 wt%, the PhOLEDs exhibited a power efficiency, current efficiency, and external quantum efficiency of 24.5 lm/W, 32.1 cd/A, 15.7%, respectively, implying a promising quenching-resistant characteristics of this novel phosphor. Furthermore, the efficient white PhOLEDs had been obtained by employing (tbpbt){sub 2}Ir(acac) as a self-host orange emitter, indicating that (tbpbt){sub 2}Ir(acac) could serve as a promising phosphor to fabricate white organic light-emitting devices with simplified manufacturing process. - Highlights: • Efficient phosphorescent devices were fabricated. • Optimized phosphor doping ratio reached as high as 15 wt%. • The results proved a promising quench-resistant property of the phosphor. • Efficient white devices based on this phosphor as self-host layer had been realized.

  5. Sample-averaged biexciton quantum yield measured by solution-phase photon correlation.

    Science.gov (United States)

    Beyler, Andrew P; Bischof, Thomas S; Cui, Jian; Coropceanu, Igor; Harris, Daniel K; Bawendi, Moungi G

    2014-12-10

    The brightness of nanoscale optical materials such as semiconductor nanocrystals is currently limited in high excitation flux applications by inefficient multiexciton fluorescence. We have devised a solution-phase photon correlation measurement that can conveniently and reliably measure the average biexciton-to-exciton quantum yield ratio of an entire sample without user selection bias. This technique can be used to investigate the multiexciton recombination dynamics of a broad scope of synthetically underdeveloped materials, including those with low exciton quantum yields and poor fluorescence stability. Here, we have applied this method to measure weak biexciton fluorescence in samples of visible-emitting InP/ZnS and InAs/ZnS core/shell nanocrystals, and to demonstrate that a rapid CdS shell growth procedure can markedly increase the biexciton fluorescence of CdSe nanocrystals.

  6. Effects of current crowding on light extraction efficiency of conventional GaN-based light-emitting diodes.

    Science.gov (United States)

    Cao, Bin; Li, Shuiming; Hu, Run; Zhou, Shengjun; Sun, Yi; Gan, Zhiying; Liu, Sheng

    2013-10-21

    Current crowding effects (CCEs) on light extraction efficiency (LEE) of conventional GaN-based light-emitting diodes (LEDs) are analyzed through Monte Carlo ray-tracing simulation. The non-uniform radiative power distribution of the active layer of the Monte Carlo model is obtained based on the current spreading theory and rate equation. The simulation results illustrate that CCE around n-pad (n-CCE) has little effect on LEE, while CCE around p-pad (p-CCE) results in a notable LEE droop due to the significant absorption of photons emitted under p-pad. LEE droop is alleviated by a SiO₂ current blocking layer (CBL) and reflective p-pad. Compared to the conventional LEDs without CBL, the simulated LEE of LEDs with CBL at 20 A/cm² and 70 A/cm² is enhanced by 7.7% and 19.0%, respectively. It is further enhanced by 7.6% and 11.4% after employing a reflective p-pad due to decreased absorption. These enhancements are in accordance with the experimental results. Output power of LEDs with CBL is enhanced by 8.7% and 18.2% at 20 A/cm² and 70 A/cm², respectively. And the reflective p-pad results in a further enhancement of 8.9% and 12.7%.

  7. Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

    International Nuclear Information System (INIS)

    Glaab, Johannes; Ploch, Christian; Kelz, Rico; Stölmacker, Christoph; Lapeyrade, Mickael; Ploch, Neysha Lobo; Rass, Jens; Kolbe, Tim; Einfeldt, Sven; Weyers, Markus; Mehnke, Frank; Kuhn, Christian; Wernicke, Tim; Kneissl, Michael

    2015-01-01

    The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been studied. LEDs with different emission areas were operated at room temperature and at constant current densities of 75 A/cm 2 , 150 A/cm 2 , and 225 A/cm 2 . In addition, the heat sink temperature was varied between 15 °C and 80 °C. Two main modes for the reduction of the optical power were found, which dominate at different times of operation: (1) Within the first 100 h, a fast drop of the optical power is observed scaling exponentially with the temperature and having an activation energy of about 0.13 eV. The drop in optical power is accompanied by changes of the current-voltage (I-V) characteristic. (2) For operation times beyond 100 h, the optical power decreases slowly which can be reasonably described by a square root time dependence. Here, the degradation rate depends on the current density, rather than the current. Again, the rate of optical power reduction of the second mode depends exponentially on the temperature with an activation energy of about 0.21 eV. The drop in the optical power is accompanied by an increased reverse-bias leakage current

  8. Cloud-based design of high average power traveling wave linacs

    Science.gov (United States)

    Kutsaev, S. V.; Eidelman, Y.; Bruhwiler, D. L.; Moeller, P.; Nagler, R.; Barbe Welzel, J.

    2017-12-01

    The design of industrial high average power traveling wave linacs must accurately consider some specific effects. For example, acceleration of high current beam reduces power flow in the accelerating waveguide. Space charge may influence the stability of longitudinal or transverse beam dynamics. Accurate treatment of beam loading is central to the design of high-power TW accelerators, and it is especially difficult to model in the meter-scale region where the electrons are nonrelativistic. Currently, there are two types of available codes: tracking codes (e.g. PARMELA or ASTRA) that cannot solve self-consistent problems, and particle-in-cell codes (e.g. Magic 3D or CST Particle Studio) that can model the physics correctly but are very time-consuming and resource-demanding. Hellweg is a special tool for quick and accurate electron dynamics simulation in traveling wave accelerating structures. The underlying theory of this software is based on the differential equations of motion. The effects considered in this code include beam loading, space charge forces, and external magnetic fields. We present the current capabilities of the code, provide benchmarking results, and discuss future plans. We also describe the browser-based GUI for executing Hellweg in the cloud.

  9. High modulation bandwidth of a light-emitting diode with surface plasmon coupling (Conference Presentation)

    Science.gov (United States)

    Lin, Chun-Han; Tu, Charng-Gan; Yao, Yu-Feng; Chen, Sheng-Hung; Su, Chia-Ying; Chen, Hao-Tsung; Kiang, Yean-Woei; Yang, Chih-Chung

    2017-02-01

    Besides lighting, LEDs can be used for indoor data transmission. Therefore, a large modulation bandwidth becomes an important target in the development of visible LED. In this regard, enhancing the radiative recombination rate of carriers in the quantum wells of an LED is a useful method since the modulation bandwidth of an LED is related to the carrier decay rate besides the device RC time constant To increase the carrier decay rate in an LED without sacrificing its output power, the technique of surface plasmon (SP) coupling in an LED is useful. In this paper, the increases of modulation bandwidth by reducing mesa size, decreasing active layer thickness, and inducing SP coupling in blue- and green-emitting LEDs are illustrated. The results are demonstrated by comparing three different LED surface structures, including bare p-type surface, GaZnO current spreading layer, and Ag nanoparticles (NPs) for inducing SP coupling. In a single-quantum-well, blue-emitting LED with a circular mesa of 10 microns in radius, SP coupling results in a modulation bandwidth of 528.8 MHz, which is believed to be the record-high level. A smaller RC time constant can lead to a higher modulation bandwidth. However, when the RC time constant is smaller than 0.2 ns, its effect on modulation bandwidth saturates. The dependencies of modulation bandwidth on injected current density and carrier decay time confirm that the modulation bandwidth is essentially inversely proportional to a time constant, which is inversely proportional to the square-root of carrier decay rate and injected current density.

  10. Are Metals Emitted from Electronic Cigarettes a Reason for Health Concern? A Risk-Assessment Analysis of Currently Available Literature

    Directory of Open Access Journals (Sweden)

    Konstantinos E. Farsalinos

    2015-05-01

    Full Text Available Background: Studies have found that metals are emitted to the electronic cigarette (EC aerosol. However, the potential health impact of exposure to such metals has not been adequately defined. The purpose of this study was to perform a risk assessment analysis, evaluating the exposure of electronic cigarette (EC users to metal emissions based on findings from the published literature. Methods: Two studies were found in the literature, measuring metals emitted to the aerosol from 13 EC products. We estimated that users take on average 600 EC puffs per day, but we evaluated the daily exposure from 1200 puffs. Estimates of exposure were compared with the chronic Permissible Daily Exposure (PDE from inhalational medications defined by the U.S. Pharmacopeia (cadmium, chromium, copper, lead and nickel, the Minimal Risk Level (MRL defined by the Agency for Toxic Substances and Disease Registry (manganese and the Recommended Exposure Limit (REL defined by the National Institute of Occupational Safety and Health (aluminum, barium, iron, tin, titanium, zinc and zirconium. Results: The average daily exposure from 13 EC products was 2.6 to 387 times lower than the safety cut-off point of PDEs, 325 times lower than the safety limit of MRL and 665 to 77,514 times lower than the safety cut-off point of RELs. Only one of the 13 products was found to result in exposure 10% higher than PDE for one metal (cadmium at the extreme daily use of 1200 puffs. Significant differences in emissions between products were observed. Conclusions: Based on currently available data, overall exposure to metals from EC use is not expected to be of significant health concern for smokers switching to EC use, but is an unnecessary source of exposure for never-smokers. Metal analysis should be expanded to more products and exposure can be further reduced through improvements in product quality and appropriate choice of materials.

  11. Injection and detection of a spin-polarized current in a light-emitting diode

    Science.gov (United States)

    Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

    1999-12-01

    The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

  12. Preparation of indium tin oxide anodes using energy filtrating technique for top-emitting organic light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Zhaoyong, Wang [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); School of Mathematics and Physics, Henan Urban Construction University, Pingdingshan 467036 (China); Ning, Yao, E-mail: yaoning@zzu.edu.cn [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China); Changbao, Han; Xing, Hu [School of Physical Engineering and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 (China)

    2014-01-01

    Indium tin oxide (ITO) anodes were deposited by an improved magnetron sputtering technique (energy filtrating magnetron sputtering technique, EFMS) for top-emitting organic light-emitting diodes (TOLEDs). The phases, surface morphologies and optical properties were examined by X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscopy (AFM) and spectroscopic ellipsometer. The sheet resistances were measured by the sheet resistance meter. The electrical properties were tested by the Hall measurement system. The electro-optic characteristics were examined by a special home-made measurement system. Results indicated that ITO anode deposited by EFMS had a more uniform and smoother surface with smaller grains. ITO film was prepared with the electrical property of the lowest resistivity (4.56 × 10{sup −4} Ω cm), highest carrier density (6.48 × 10{sup 20} cm{sup −3}) and highest carrier mobility (21.1 cm{sup 2}/V/s). The average transmissivity of the ITO film was 87.0% in the wavelength range of 400–800 nm. The TOLEDs based on this ITO anode had a lower turn-on voltage of 2 V (>0.02 mA/cm{sup 2}), higher current density of 58.4 mA/cm{sup 2} at 30 V, higher current efficiency of 1.374 cd/A and higher luminous efficiency of 0.175 lm/W. The possible mechanism of the technique was discussed in detail.

  13. A Novel LTPS-TFT Pixel Circuit to Compensate the Electronic Degradation for Active-Matrix Organic Light-Emitting Diode Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2013-01-01

    Full Text Available A novel pixel driving circuit for active-matrix organic light-emitting diode (AMOLED displays with low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs is studied. The proposed compensation pixel circuit is driven by voltage programming scheme, which is composed of five TFTs and one capacitor, and has been certified to provide uniform output current by the Automatic Integrated Circuit Modeling Simulation Program with Integrated Circuit Emphasis (AIM-SPICE simulator. The results of simulation show excellent performance, such as the low average error rate of OLED current variation (<0.5% and the low average nonuniformity of OLED current variation (<0.8% while the shift of threshold voltage of the driving poly-Si TFT and the OLED are both in the worst case ( V for TFT and  V for OLED. The proposed pixel circuit shows high immunity to the threshold voltage deviation of both the driving poly-Si TFT and the OLED.

  14. Highly efficient blue organic light emitting device using indium-free transparent anode Ga:ZnO with scalability for large area coating

    International Nuclear Information System (INIS)

    Wang Liang; Matson, Dean W.; Polikarpov, Evgueni; Swensen, James S.; Bonham, Charles C.; Cosimbescu, Lelia; Gaspar, Daniel J.; Padmaperuma, Asanga B.; Berry, Joseph J.; Ginley, David S.

    2010-01-01

    Organic light emitting devices have been achieved with an indium-free transparent anode, Ga doped ZnO (GZO). A large area coating technique was used (RF magnetron sputtering) to deposit the GZO films onto glass. The respective organic light emitting devices exhibited an operational voltage of 3.7 V, an external quantum efficiency of 17%, and a power efficiency of 39 lm/W at a current density of 1 mA/cm 2 . These parameters are well within acceptable standards for blue OLEDs to generate a white light with high enough brightness for general lighting applications. It is expected that high-efficiency, long-lifetime, large area, and cost-effective white OLEDs can be made with these indium-free anode materials.

  15. High Average Power, High Energy Short Pulse Fiber Laser System

    Energy Technology Data Exchange (ETDEWEB)

    Messerly, M J

    2007-11-13

    Recently continuous wave fiber laser systems with output powers in excess of 500W with good beam quality have been demonstrated [1]. High energy, ultrafast, chirped pulsed fiber laser systems have achieved record output energies of 1mJ [2]. However, these high-energy systems have not been scaled beyond a few watts of average output power. Fiber laser systems are attractive for many applications because they offer the promise of high efficiency, compact, robust systems that are turn key. Applications such as cutting, drilling and materials processing, front end systems for high energy pulsed lasers (such as petawatts) and laser based sources of high spatial coherence, high flux x-rays all require high energy short pulses and two of the three of these applications also require high average power. The challenge in creating a high energy chirped pulse fiber laser system is to find a way to scale the output energy while avoiding nonlinear effects and maintaining good beam quality in the amplifier fiber. To this end, our 3-year LDRD program sought to demonstrate a high energy, high average power fiber laser system. This work included exploring designs of large mode area optical fiber amplifiers for high energy systems as well as understanding the issues associated chirped pulse amplification in optical fiber amplifier systems.

  16. Highly Efficient Light-Emitting Diodes of Colloidal Metal-Halide Perovskite Nanocrystals beyond Quantum Size.

    Science.gov (United States)

    Kim, Young-Hoon; Wolf, Christoph; Kim, Young-Tae; Cho, Himchan; Kwon, Woosung; Do, Sungan; Sadhanala, Aditya; Park, Chan Gyung; Rhee, Shi-Woo; Im, Sang Hyuk; Friend, Richard H; Lee, Tae-Woo

    2017-07-25

    Colloidal metal-halide perovskite quantum dots (QDs) with a dimension less than the exciton Bohr diameter D B (quantum size regime) emerged as promising light emitters due to their spectrally narrow light, facile color tuning, and high photoluminescence quantum efficiency (PLQE). However, their size-sensitive emission wavelength and color purity and low electroluminescence efficiency are still challenging aspects. Here, we demonstrate highly efficient light-emitting diodes (LEDs) based on the colloidal perovskite nanocrystals (NCs) in a dimension > D B (regime beyond quantum size) by using a multifunctional buffer hole injection layer (Buf-HIL). The perovskite NCs with a dimension greater than D B show a size-irrespective high color purity and PLQE by managing the recombination of excitons occurring at surface traps and inside the NCs. The Buf-HIL composed of poly(3,4-ethylenedioxythiophene)/poly(styrenesulfonate) (PEDOT:PSS) and perfluorinated ionomer induces uniform perovskite particle films with complete film coverage and prevents exciton quenching at the PEDOT:PSS/perovskite particle film interface. With these strategies, we achieved a very high PLQE (∼60.5%) in compact perovskite particle films without any complex post-treatments and multilayers and a high current efficiency of 15.5 cd/A in the LEDs of colloidal perovskite NCs, even in a simplified structure, which is the highest efficiency to date in green LEDs that use colloidal organic-inorganic metal-halide perovskite nanoparticles including perovskite QDs and NCs. These results can help to guide development of various light-emitting optoelectronic applications based on perovskite NCs.

  17. Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

    Science.gov (United States)

    Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

    2012-03-12

    The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

  18. Development of a high brightness, high current SRF photo-electron source for ERL applications

    Energy Technology Data Exchange (ETDEWEB)

    Neumann, Axel [Helmholtz-Zentrum Berlin (Germany); Collaboration: bERLinPro Team

    2016-07-01

    Energy recovery linacs (ERL) offer the potential to combine major beam properties of the two main domains of particle accelerators: The low emittance of linear accelerators and the high average beam current of storage rings, while also allowing to compress to short bunches below the ps regime. This makes among other applications ERLs an ideal candidate for future light sources. The beam properties of the ERL are given by the performance of the injection section and hence of the beam source. Helmholtz-Zentrum Berlin is currently designing and building a high average current all superconducting CW driven ERL as a prototype to demonstrate low normalized beam emittance of 1 mm*mrad at 100 mA and short pulses of about 2 ps. In this contribution we discuss the development of this class of a high brightness, high current SRF photo-electron source and present recent commissioning results. Also, alternative approaches at other laboratories are shortly reviewed.

  19. Degradation of (InAlGa)N-based UV-B light emitting diodes stressed by current and temperature

    Energy Technology Data Exchange (ETDEWEB)

    Glaab, Johannes, E-mail: johannes.glaab@fbh-berlin.de; Ploch, Christian; Kelz, Rico; Stölmacker, Christoph; Lapeyrade, Mickael; Ploch, Neysha Lobo; Rass, Jens; Kolbe, Tim; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Mehnke, Frank; Kuhn, Christian; Wernicke, Tim [Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kneissl, Michael [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany)

    2015-09-07

    The degradation of the electrical and optical properties of (InAlGa)N-based multiple quantum well light emitting diodes (LEDs) emitting near 308 nm under different stress conditions has been studied. LEDs with different emission areas were operated at room temperature and at constant current densities of 75 A/cm{sup 2}, 150 A/cm{sup 2}, and 225 A/cm{sup 2}. In addition, the heat sink temperature was varied between 15 °C and 80 °C. Two main modes for the reduction of the optical power were found, which dominate at different times of operation: (1) Within the first 100 h, a fast drop of the optical power is observed scaling exponentially with the temperature and having an activation energy of about 0.13 eV. The drop in optical power is accompanied by changes of the current-voltage (I-V) characteristic. (2) For operation times beyond 100 h, the optical power decreases slowly which can be reasonably described by a square root time dependence. Here, the degradation rate depends on the current density, rather than the current. Again, the rate of optical power reduction of the second mode depends exponentially on the temperature with an activation energy of about 0.21 eV. The drop in the optical power is accompanied by an increased reverse-bias leakage current.

  20. Highly efficient deep-blue organic light emitting diode with a carbazole based fluorescent emitter

    Science.gov (United States)

    Sahoo, Snehasis; Dubey, Deepak Kumar; Singh, Meenu; Joseph, Vellaichamy; Thomas, K. R. Justin; Jou, Jwo-Huei

    2018-04-01

    High efficiency deep-blue emission is essential to realize energy-saving, high-quality display and lighting applications. We demonstrate here a deep-blue organic light emitting diode using a novel carbazole based fluorescent emitter 7-[4-(diphenylamino)phenyl]-9-(2-ethylhexyl)-9H-carbazole-2-carbonitrile (JV234). The solution processed resultant device shows a maximum luminance above 1,750 cd m-2 and CIE coordinates (0.15,0.06) with a 1.3 lm W-1 power efficiency, 2.0 cd A-1 current efficiency, and 4.1% external quantum efficiency at 100 cd m-2. The resulting deep-blue emission enables a greater than 100% color saturation. The high efficiency may be attributed to the effective host-to-guest energy transfer, suitable device architecture facilitating balanced carrier injection and low doping concentration preventing efficiency roll-off caused by concentration quenching.

  1. Deep-blue efficient OLED based on NPB with little efficiency roll-off under high current density

    Science.gov (United States)

    Liu, Jian

    2017-03-01

    NPB usually is used as a hole-transport layer in OLED. In fact, it is a standard pure blue-emission material. However, its light-emitting efficiency in OLED is low due to emissive nature of organic material. Herein, a deep-blue OLDE based on NPB was fabricated. The light-emitting efficiency of the device demonstrates a moderate value, and efficiency roll-off is little under high current density. The device demonstrates that the electroplex's emission decreases with increasing electric field intensity.

  2. Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii

    This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non-radiative e......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......-resolved PL and electroluminescence (EL) together with current-voltage characteristics are presented to evaluate the device performance. A clear evidence of non-radiative energy transfer was seen in the carrier dynamics of both the LED and the nanocrystals when the quantum well – nanocrystals separation...

  3. High-efficiency orange and tandem white organic light-emitting diodes using phosphorescent dyes with horizontally oriented emitting dipoles.

    Science.gov (United States)

    Lee, Sunghun; Shin, Hyun; Kim, Jang-Joo

    2014-09-03

    Tandem white organic light-emitting diodes (WOLEDs) using horizontally oriented phosphorescent dyes in an exciplex-forming co-host are presented, along with an orange OLED. A high external quantum efficiency of 32% is achieved for the orange OLED at 1000 cd m(-2) and the tandem WOLEDs exhibit a high maximum EQE of 54.3% (PE of 63 lm W(-1)). © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. High average-power induction linacs

    International Nuclear Information System (INIS)

    Prono, D.S.; Barrett, D.; Bowles, E.

    1989-01-01

    Induction linear accelerators (LIAs) are inherently capable of accelerating several thousand amperes of /approximately/ 50-ns duration pulses to > 100 MeV. In this paper we report progress and status in the areas of duty factor and stray power management. These technologies are vital if LIAs are to attain high average power operation. 13 figs

  5. Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

    Science.gov (United States)

    Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

    2003-06-01

    High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

  6. Heat transfer and structure stress analysis of micro packaging component of high power light emitting diode

    Directory of Open Access Journals (Sweden)

    Hsu Chih-Neng

    2013-01-01

    Full Text Available This paper focuses on the heat transfer and structural stress analysis of the micro- scale packaging structure of a high-power light emitting diode. The thermal-effect and thermal-stress of light emitting diode are determined numerically. Light emitting diode is attached to the silicon substrate through the wire bonding process by using epoxy as die bond material. The silicon substrate is etched with holes at the bottom and filled with high conductivity copper material. The chip temperature and structure stress increase with input power consumption. The micro light emitting diode is mounted on the heat sink to increase the heat dissipation performance, to decrease chip temperature, to enhance the material structure reliability and safety, and to avoid structure failure as well. This paper has successfully used the finite element method to the micro-scale light emitting diode heat transfer and stress concentration at the edges through etched holes.

  7. Low-voltage and high-efficiency white organic light emitting devices with carrier balance

    International Nuclear Information System (INIS)

    Wei Fuxiang; Huang, Y.; Fang, L.

    2010-01-01

    White organic light emitting devices with the structure of ITO/m-MTDATA:x%4F-TCNQ/NPB/TBADN:EBDP:DCJTB/Bphen:Liq/LiF/Al have been demonstrated in this paper. High-mobility m-MTDATA:4F-TCNQ is added into the region between ITO and NBP to increase hole injection and transport. The high-mobility Bphen:Liq layer is added into the region between cathode and emission layers to lower cathode barrier and facilitate carrier injection. In the meanwhile, an effective carrier balance (number of holes is equal to number of electrons) between holes and electrons is considered to be one of the most important factors for improving OLEDs. During the experiment, by modulating the doping concentration of 4F-TCNQ, we can control hole injection and transport to make the carriers reach a high-level balance. The maximum current efficiency and power efficiency of devices were 9.3 cd/A and 4.6 lm/A, respectively.

  8. High average-power induction linacs

    International Nuclear Information System (INIS)

    Prono, D.S.; Barrett, D.; Bowles, E.; Caporaso, G.J.; Chen, Yu-Jiuan; Clark, J.C.; Coffield, F.; Newton, M.A.; Nexsen, W.; Ravenscroft, D.; Turner, W.C.; Watson, J.A.

    1989-01-01

    Induction linear accelerators (LIAs) are inherently capable of accelerating several thousand amperes of ∼ 50-ns duration pulses to > 100 MeV. In this paper the authors report progress and status in the areas of duty factor and stray power management. These technologies are vital if LIAs are to attain high average power operation. 13 figs

  9. High power cascade diode lasers emitting near 2 μm

    Energy Technology Data Exchange (ETDEWEB)

    Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu; Kipshidze, Gela; Belenky, Gregory [State University of New York at Stony Brook, Stony Brook, New York 11794 (United States)

    2016-03-28

    High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumping scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.

  10. Method for controlling low-energy high current density electron beams

    International Nuclear Information System (INIS)

    Lee, J.N.; Oswald, R.B. Jr.

    1977-01-01

    A method and an apparatus for controlling the angle of incidence of low-energy, high current density electron beams are disclosed. The apparatus includes a current generating diode arrangement with a mesh anode for producing a drifting electron beam. An auxiliary grounded screen electrode is placed between the anode and a target for controlling the average angle of incidence of electrons in the drifting electron beam. According to the method of the present invention, movement of the auxiliary screen electrode relative to the target and the anode permits reliable and reproducible adjustment of the average angle of incidence of the electrons in low energy, high current density relativistic electron beams

  11. Emitted Power of Jupiter Based on Cassini CIRS and VIMS Observations

    Science.gov (United States)

    Li, Liming; Baines, Kevin H.; Smith, Mark A.; West, Robert A.; Perez-Hoyos, Santiago; Trammel, Harold J.; Simon-Miller, Amy A.; Conrath, Barney J.; Gierasch, Peter J.; Orton, Glenn S.; hide

    2012-01-01

    The emitted power of Jupiter and its meridional distribution are determined from observations by the Composite Infrared Spectrometer (CIRS) and Visual and Infrared Spectrometer (VIMS) onboard Cassini during its flyby en route to Saturn in late 2000 and early 2001. Jupiter's global- average emitted power and effective temperature are measured to be 14.10+/-0.03 W/sq m and 125.57+/-0.07 K, respectively. On a global scale, Jupiter's 5-micron thermal emission contributes approx. 0.7+/-0.1 % to the total emitted power at the global scale, but it can reach approx. 1.9+/-0.6% at 15degN. The meridional distribution of emitted power shows a significant asymmetry between the two hemispheres with the emitted power in the northern hemisphere 3.0+/-0.3% larger than that in the southern hemisphere. Such an asymmetry shown in the Cassini epoch (2000-01) is not present during the Voyager epoch (1979). In addition, the global-average emitted power increased approx. 3.8+/-1.0% between the two epochs. The temporal variation of Jupiter's total emitted power is mainly due to the warming of atmospheric layers around the pressure level of 200 mbar. The temporal variation of emitted power was also discovered on Saturn (Li et al., 2010). Therefore, we suggest that the varying emitted power is a common phenomenon on the giant planets.

  12. Observations of propagating double layers in a high current discharge

    International Nuclear Information System (INIS)

    Lindberg, L.

    1988-01-01

    Observations of current disruptions and strong electric fields along the magnetic field in a high-density (2 x 10 19 m - 3 , highly-ionized, moving, and expanding plasma column are reported. The electric field is interpreted in terms of propagating, strong electric double layers (3-5kV). An initial plasma column is formed in an axial magnetic field (0.1T) by means of a conical theta-pinch plasma gun. When an axial current (max 5kA, 3-5 kV) is drawn through the column spontaneous disruptions and double-layer formation occur within a few microseconds. Floating, secondary emitting Langmuir probes are used. They often indicate very high positive potential peaks (1-2 kV above the anode potential during a few μs) in the plasma on the positive side of the double layer. Short, intense bursts of HF radiation are detected at the disruptions

  13. Highly efficient exciplex organic light-emitting diodes incorporating a heptazine derivative as an electron acceptor.

    Science.gov (United States)

    Li, Jie; Nomura, Hiroko; Miyazaki, Hiroshi; Adachi, Chihaya

    2014-06-11

    Highly efficient exciplex systems incorporating a heptazine derivative () as an electron acceptor and 1,3-di(9H-carbazol-9-yl)benzene () as an electron donor are developed. An organic light-emitting diode containing 8 wt% : as an emitting layer exhibits a maximum external quantum efficiency of 11.3%.

  14. Ring cavity surface emitting semiconductor lasers

    International Nuclear Information System (INIS)

    Mujagic, E.

    2010-01-01

    m. Characterizations indicate a high temperature operation of MIR ring-CSELs along with a reduction in threshold current density of MIR devices by 35% as compared to Fabry-Perot devices. The lower operating currents in ring-CSELs became noticeable in continuous wave (CW) operation with a 50K higher maximum temperature than in FP lasers. A two-fold enhancement in radiation efficiency was obtained in MIR and THz ring-CSELs as compared to FP emitters. The DFB grating on top of the resonator gives rise to a single-mode operation of ring-CSELs for all operation currents. Linear wavelength tuning is achieved by fabricating different gratings periods as well as by a variation in temperature. The slope efficiency and the threshold current density does not seem to significantly depend on the grating period, which is attributed to the absence of mirrors. The incorporated circular waveguide geometry along with the surface emitting character gives rise to symmetric and low divergence azimuthally polarized optical beams. The recorded far-fields indicate a ring shaped interference patterns with lobe separations of 1.34 o and 14.14 o for MIR and THz ring-CSELs, respectively. Fabrication of detuned gratings led to a grating period induced as well as to a tunable wavelength induced beam shaping, with beam patterns ranging from spot to wide ring cross sections. (author) [de

  15. Research on DC-RF superconducting photocathode injector for high average power FELs

    International Nuclear Information System (INIS)

    Zhao Kui; Hao Jiankui; Hu Yanle; Zhang Baocheng; Quan Shengwen; Chen Jiaer; Zhuang Jiejia

    2001-01-01

    To obtain high average current electron beams for a high average power Free Electron Laser (FEL), a DC-RF superconducting injector is designed. It consists of a DC extraction gap, a 1+((1)/(2)) superconducting cavity and a coaxial input system. The DC gap, which takes the form of a Pierce configuration, is connected to the 1+((1)/(2)) superconducting cavity. The photocathode is attached to the negative electrode of the DC gap. The anode forms the bottom of the ((1)/(2)) cavity. Simulations are made to model the beam dynamics of the electron beams extracted by the DC gap and accelerated by the superconducting cavity. High quality electron beams with emittance lower than 3 π-mm-mrad can be obtained. The optimization of experiments with the DC gap, as well as the design of experiments with the coaxial coupler have all been completed. An optimized 1+((1)/(2)) superconducting cavity is in the process of being studied and manufactured

  16. Exciplex-Forming Co-Host-Based Red Phosphorescent Organic Light-Emitting Diodes with Long Operational Stability and High Efficiency.

    Science.gov (United States)

    Lee, Jeong-Hwan; Shin, Hyun; Kim, Jae-Min; Kim, Kwon-Hyeon; Kim, Jang-Joo

    2017-02-01

    The use of exciplex forming cohosts and phosphors incredibly boosts the efficiency of organic light-emitting diodes (OLEDs) by providing a barrier-free charge injection into an emitting layer and a broad recombination zone. However, most of the efficient OLEDs based on the exciplex forming cohosts has suffered from the short operational lifetime. Here, we demonstrated phosphorescent OLEDs (PhOLEDs) having both high efficiency and long lifetime by using a new exciplex forming cohost composed of N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) and (1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) (PO-T2T). The red-emitting PhOLEDs using the exciplex forming cohost achieved a maximum external quantum efficiency (EQE) of 34.1% and power efficiency of 62.2 lm W 1- with low operating voltages and low efficiency roll-offs. More importantly, the device demonstrated a long lifetime around 2249 h from 1000 cd m -2 to 900 cd m -2 (LT 90 ) under a continuous flow of constant current. The efficiencies of the devices are the highest for red OLEDs with an LT 90 > 1000 h.

  17. Manufacturing polymer light emitting diode with high luminance efficiency by solution process

    Science.gov (United States)

    Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

    2012-06-01

    While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

  18. Highly Efficient Spectrally Stable Red Perovskite Light-Emitting Diodes.

    Science.gov (United States)

    Tian, Yu; Zhou, Chenkun; Worku, Michael; Wang, Xi; Ling, Yichuan; Gao, Hanwei; Zhou, Yan; Miao, Yu; Guan, Jingjiao; Ma, Biwu

    2018-05-01

    Perovskite light-emitting diodes (LEDs) have recently attracted great research interest for their narrow emissions and solution processability. Remarkable progress has been achieved in green perovskite LEDs in recent years, but not blue or red ones. Here, highly efficient and spectrally stable red perovskite LEDs with quasi-2D perovskite/poly(ethylene oxide) (PEO) composite thin films as the light-emitting layer are reported. By controlling the molar ratios of organic salt (benzylammonium iodide) to inorganic salts (cesium iodide and lead iodide), luminescent quasi-2D perovskite thin films are obtained with tunable emission colors from red to deep red. The perovskite/polymer composite approach enables quasi-2D perovskite/PEO composite thin films to possess much higher photoluminescence quantum efficiencies and smoothness than their neat quasi-2D perovskite counterparts. Electrically driven LEDs with emissions peaked at 638, 664, 680, and 690 nm have been fabricated to exhibit high brightness and external quantum efficiencies (EQEs). For instance, the perovskite LED with an emission peaked at 680 nm exhibits a brightness of 1392 cd m -2 and an EQE of 6.23%. Moreover, exceptional electroluminescence spectral stability under continuous device operation has been achieved for these red perovskite LEDs. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Stacking multiple connecting functional materials in tandem organic light-emitting diodes

    Science.gov (United States)

    Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

    2017-02-01

    Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

  20. Color-tunable and high-efficiency organic light-emitting diode by adjusting exciton bilateral migration zone

    Science.gov (United States)

    Liu, Shengqiang; Wu, Ruofan; Huang, Jiang; Yu, Junsheng

    2013-09-01

    A voltage-controlled color-tunable and high-efficiency organic light-emitting diode (OLED) by inserting 16-nm N,N'-dicarbazolyl-3,5-benzene (mCP) interlayer between two complementary emitting layers (EMLs) was fabricated. The OLED emitted multicolor ranging from blue (77.4 cd/A @ 6 V), white (70.4 cd/A @ 7 V), to yellow (33.7 cd/A @ 9 V) with voltage variation. An equivalent model was proposed to reveal the color-tunable and high-efficiency emission of OLEDs, resulting from the swing of exciton bilateral migration zone near mCP/blue-EML interface. Also, the model was verified with a theoretical arithmetic using single-EML OLEDs to disclose the crucial role of mCP exciton adjusting layer.

  1. Top emitting white OLEDs

    Energy Technology Data Exchange (ETDEWEB)

    Freitag, Patricia; Luessem, Bjoern; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, George-Baehr-Strasse 1, 01069 Dresden (Germany)

    2009-07-01

    Top emitting organic light emitting diodes (TOLEDs) provide a number of interesting opportunities for new applications, such as the opportunity to fabricate ITO-free devices by using opaque substrates. This makes it possible to manufacture low cost OLEDs for signage and lighting applications. A general top emitting device consists of highly reflecting metal contacts as anode and semitransparent cathode, the latter one for better outcouling reasons. In between several organic materials are deposited as charge transporting, blocking, and emission layers. Here, we show a top emitting white organic light emitting diode with silver electrodes arranged in a p-i-n structure with p- and n-doped charge transport layers. The centrical emission layer consists of two phosphorescent (red and green) and one fluorescent (blue) emitter systems separated by an ambipolar interlayer to avoid mutual exciton quenching. By adding an additional dielectric capping layer on top of the device stack, we achieve a reduction of the strong microcavity effects which appear due to the high reflection of both metal electrodes. Therefore, the outcoupled light shows broad and nearly angle-independent emission spectra, which is essential for white light emitting diodes.

  2. Highly Efficient Green-Emitting Phosphors Ba2Y5B5O17 with Low Thermal Quenching Due to Fast Energy Transfer from Ce3+ to Tb3.

    Science.gov (United States)

    Xiao, Yu; Hao, Zhendong; Zhang, Liangliang; Xiao, Wenge; Wu, Dan; Zhang, Xia; Pan, Guo-Hui; Luo, Yongshi; Zhang, Jiahua

    2017-04-17

    This paper demonstrates a highly thermally stable and efficient green-emitting Ba 2 Y 5 B 5 O 17 :Ce 3+ , Tb 3+ phosphor prepared by high-temperature solid-state reaction. The phosphor exhibits a blue emission band of Ce 3+ and green emission lines of Tb 3+ upon Ce 3+ excitation in the near-UV spectral region. The effect of Ce 3+ to Tb 3+ energy transfer on blue to green emission color tuning and on luminescence thermal stability is studied in the samples codoped with 1% Ce 3+ and various concentrations (0-40%) of Tb 3+ . The green emission of Tb 3+ upon Ce 3+ excitation at 150 °C can keep, on average, 92% of its intensity at room temperature, with the best one showing no intensity decreasing up to 210 °C for 30% Tb 3+ . Meanwhile, Ce 3+ emission intensity only keeps 42% on average at 150 °C. The high thermal stability of the green emission is attributed to suppression of Ce 3+ thermal de-excitation through fast energy transfer to Tb 3+ , which in the green-emitting excited states is highly thermally stable such that no lifetime shortening is observed with raising temperature to 210 °C. The predominant green emission is observed for Tb 3+ concentration of at least 10% due to efficient energy transfer with the transfer efficiency approaching 100% for 40% Tb 3+ . The internal and external quantum yield of the sample with Tb 3+ concentration of 20% can be as high as 76% and 55%, respectively. The green phosphor, thus, shows attractive performance for near-UV-based white-light-emitting diodes applications.

  3. HIGH-CURRENT ERL-BASED ELECTRON COOLING FOR RHIC

    International Nuclear Information System (INIS)

    BEN-ZVI, I.

    2005-01-01

    The design of an electron cooler must take into account both electron beam dynamics issues as well as the electron cooling physics. Research towards high-energy electron cooling of RHIC is in its 3rd year at Brookhaven National Laboratory. The luminosity upgrade of RHIC calls for electron cooling of various stored ion beams, such as 100 GeV/A gold ions at collision energies. The necessary electron energy of 54 MeV is clearly out of reach for DC accelerator system of any kind. The high energy also necessitates a bunched beam, with a high electron bunch charge, low emittance and small energy spread. The Collider-Accelerator Department adopted the Energy Recovery Linac (ERL) for generating the high-current, high-energy and high-quality electron beam. The RHIC electron cooler ERL will use four Superconducting RF (SRF) 5-cell cavities, designed to operate at ampere-class average currents with high bunch charges. The electron source will be a superconducting, 705.75 MHz laser-photocathode RF gun, followed up by a superconducting Energy Recovery Linac (ERL). An R and D ERL is under construction to demonstrate the ERL at the unprecedented average current of 0.5 amperes. Beam dynamics performance and luminosity enhancement are described for the case of magnetized and non-magnetized electron cooling of RHIC

  4. Rf system modeling for the high average power FEL at CEBAF

    International Nuclear Information System (INIS)

    Merminga, L.; Fugitt, J.; Neil, G.; Simrock, S.

    1995-01-01

    High beam loading and energy recovery compounded by use of superconducting cavities, which requires tight control of microphonic noise, place stringent constraints on the linac rf system design of the proposed high average power FEL at CEBAF. Longitudinal dynamics imposes off-crest operation, which in turn implies a large tuning angle to minimize power requirements. Amplitude and phase stability requirements are consistent with demonstrated performance at CEBAF. A numerical model of the CEBAF rf control system is presented and the response of the system is examined under large parameter variations, microphonic noise, and beam current fluctuations. Studies of the transient behavior lead to a plausible startup and recovery scenario

  5. Highly Efficient Visible Colloidal Lead-Halide Perovskite Nanocrystal Light-Emitting Diodes

    Science.gov (United States)

    Yan, Fei; Xing, Jun; Xing, Guichuan; Quan, Lina; Tan, Swee Tiam; Zhao, Jiaxin; Su, Rui; Zhang, Lulu; Chen, Shi; Zhao, Yawen; Huan, Alfred; Sargent, Edward H.; Xiong, Qihua; Demir, Hilmi Volkan

    2018-05-01

    Lead-halide perovskites have been attracting attention for potential use in solid-state lighting. Following the footsteps of solar cells, the field of perovskite light-emitting diodes (PeLEDs) has been growing rapidly. Their application prospects in lighting, however, remain still uncertain due to a variety of shortcomings in device performance including their limited levels of luminous efficiency achievable thus far. Here we show high-efficiency PeLEDs based on colloidal perovskite nanocrystals (PeNCs) synthesized at room temperature possessing dominant first-order excitonic radiation (enabling a photoluminescence quantum yield of 71% in solid film), unlike in the case of bulk perovskites with slow electron-hole bimolecular radiative recombination (a second-order process). In these PeLEDs, by reaching charge balance in the recombination zone, we find that the Auger nonradiative recombination, with its significant role in emission quenching, is effectively suppressed in low driving current density range. In consequence, these devices reach a record high maximum external quantum efficiency of 12.9% reported to date and an unprecedentedly high power efficiency of 30.3 lm W-1 at luminance levels above 1000 cd m-2 as required for various applications. These findings suggest that, with feasible levels of device performance, the PeNCs hold great promise for their use in LED lighting and displays.

  6. New Pulsed Power Technology for High Current Accelerators

    International Nuclear Information System (INIS)

    Caporaso, G J

    2002-01-01

    Recent advances in solid-state modulators now permit the design of a new class of high current accelerators. These new accelerators will be able to operate in burst mode at frequencies of several MHz with unprecedented flexibility and precision in pulse format. These new modulators can drive accelerators to high average powers that far exceed those of any other technology and can be used to enable precision beam manipulations. New insulator technology combined with novel pulse forming lines and switching may enable the construction of a new type of high gradient, high current accelerator. Recent developments in these areas will be reviewed

  7. Top-emitting organic light-emitting diodes.

    Science.gov (United States)

    Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

    2011-11-07

    We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

  8. Evaluation of some emitted elements from selected small industries in Khartoum state

    International Nuclear Information System (INIS)

    Elboraie, Mahir Zein Elabdeen

    1999-08-01

    Employing x-ray fluorescence spectrometry, levels of calcium, chromium, iron, cobalt, nickel, copper, zinc and lead in the indoor aerosol environment of nile painting company, battery charging shop, Khartoum university printing press, Mirghany workshop, Burri power station and Sudanese mint company industries were measured. In the Nile painting company site, calcium, cobalt, nickel and lead exhibited high levels of concentration, whilst chromium, and copper displayed relatively high values with respect to their levels in the control site (Tutti Island). Iron exhibited a level nearly identical to that measured at the control site. No emission of zinc was monitored. In Battery Charging Shop site, Iron and lead, displayed the highest levels recorded, and calcium, chromium, copper, exhibited concentrations relatively high than the corresponding levels in the control site. Cobalt, nickel, and zinc have not been detected. The same trending was found in Khartoum University Printing Press site, with the exception that the level of iron is relatively high with respect to that of control site. In Mirghany Workshop site, calcium, iron, nickel, and zinc measured the highest values. Chromium, copper, and lead measured relatively high values with respect to their concentrations in the control site. No emission of cobalt was monitored. The average concentrations of calcium, iron, copper, and lead in Burri Power Station were nearly the same with that control site. Chromium, cobalt, nickel, and zinc, however, were not detected. In the indoor aerosol of Sudanese Mint Company site, cobalt, nickel, copper, and zinc, measured the highest values, whilst calcium, iron, chromium, and lead, displayed relatively high values with respect to their concentrations in the control site. The average concentrations of the elements under study in the indoor and outdoor aerosols of Sudanese Mint Company do not correlate to each other, but the outdoor measurements nearly resemble to those of the

  9. Beta-energy averaging and beta spectra

    International Nuclear Information System (INIS)

    Stamatelatos, M.G.; England, T.R.

    1976-07-01

    A simple yet highly accurate method for approximately calculating spectrum-averaged beta energies and beta spectra for radioactive nuclei is presented. This method should prove useful for users who wish to obtain accurate answers without complicated calculations of Fermi functions, complex gamma functions, and time-consuming numerical integrations as required by the more exact theoretical expressions. Therefore, this method should be a good time-saving alternative for investigators who need to make calculations involving large numbers of nuclei (e.g., fission products) as well as for occasional users interested in restricted number of nuclides. The average beta-energy values calculated by this method differ from those calculated by ''exact'' methods by no more than 1 percent for nuclides with atomic numbers in the 20 to 100 range and which emit betas of energies up to approximately 8 MeV. These include all fission products and the actinides. The beta-energy spectra calculated by the present method are also of the same quality

  10. Highly stable cesium lead iodide perovskite quantum dot light-emitting diodes

    Science.gov (United States)

    Zou, Chen; Huang, Chun-Ying; Sanehira, Erin M.; Luther, Joseph M.; Lin, Lih Y.

    2017-11-01

    Recently, all-inorganic perovskites such as CsPbBr3 and CsPbI3, have emerged as promising materials for light-emitting applications. While encouraging performance has been demonstrated, the stability issue of the red-emitting CsPbI3 is still a major concern due to its small tolerance factor. Here we report a highly stable CsPbI3 quantum dot (QD) light-emitting diode (LED) with red emission fabricated using an improved purification approach. The device achieved decent external quantum efficiency (EQE) of 0.21% at a bias of 6 V and outstanding operational stability, with a L 70 lifetime (EL intensity decreases to 70% of starting value) of 16 h and 1.5 h under a constant driving voltage of 5 V and 6 V (maximum EQE operation) respectively. Furthermore, the device can work under a higher voltage of 7 V (maximum luminance operation) and retain 50% of its initial EL intensity after 500 s. These findings demonstrate the promise of CsPbI3 QDs for stable red LEDs, and suggest the feasibility for electrically pumped perovskite lasers with further device optimizations.

  11. The design of a five-cell high-current superconducting cavity

    International Nuclear Information System (INIS)

    Li Yongming; Zhu Feng; Quan Shengwen; Liu Kexin; Nassiri, Ali

    2012-01-01

    Energy recovery linacs are promising for achieving high average current with superior beam quality. The key component for accelerating such high-current beams is the superconducting radio-frequency cavity. The design of a 1.3 GHz five-cell high-current superconducting cavity has been carried out under cooperation between Peking University and the Argonne National Laboratory. The radio-frequency properties, damping of the higher order modes, multipacting and mechanical features of this cavity have been discussed and the final design is presented. (authors)

  12. Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

    Science.gov (United States)

    Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

    2013-08-01

    Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

  13. Droop-Free, Reliable, and High-Power InGaN/GaN Nanowire Light-Emitting Diodes for Monolithic Metal-Optoelectronics

    KAUST Repository

    Zhao, Chao

    2016-07-28

    A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the “green gap” has been a subject of intense scientific and engineering interest. While several properties of nanowires on silicon make them promising for use in LED development, the high aspect ratio of individual nanowires and their laterally discontinuous features limit phonon transport and device performance. Here, we report on the monolithic integration of metal heat-sink and droop-free InGaN/GaN quantum-disks-in-nanowire LEDs emitting at ∼710 nm. The reliable operation of our uncooled nanowire-LEDs (NW-LEDs) epitaxially grown on molybdenum was evident in the constant-current soft burn-in performed on a 380 μm × 380 μm LED. The square LED sustained 600 mA electrical stress over an 8 h period, providing stable light output at maturity without catastrophic failure. The absence of carrier and phonon transport barriers in NW-LEDs was further inferred from current-dependent Raman measurements (up to 700 mA), which revealed the low self-heating. The radiative recombination rates of NW-LEDs between room temperature and 40 °C was not limited by Shockley–Read–Hall recombination, Auger recombination, or carrier leakage mechanisms, thus realizing droop-free operation. The discovery of reliable, droop-free devices constitutes significant progress toward the development of nanowires for practical applications. Our monolithic approach realized a high-performance device that will revolutionize the way high power, low-junction-temperature LED lamps are manufactured for solid-state lighting and for applications in high-temperature harsh environment.

  14. A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

    KAUST Repository

    Al-Saggaf, Abeer

    2015-05-01

    The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

  15. A Closed-Loop Smart Control System Driving RGB Light Emitting Diodes

    KAUST Repository

    Al-Saggaf, Abeer

    2015-01-01

    The demand for control systems that are highly capable of driving solid-state optoelectronic devices has significantly increased with the advancement of their efficiency and elevation of their current consumption. This work presents a closed-loop control system that is based on a microcontroller embedded system capable of driving high power optoelectronic devices. In this version of the system, the device in the center of control is a high-power red, green, and blue light emitting diode package. The system features a graphical user interface, namely an Android mobile phone application, in which the user can easily use to vary the light color and intensity of the light-emitting device wirelessly via Bluetooth. Included in the system is a feedback mechanism constituted by a red, green, and blue color sensor through which the user can use to observe feedback color information about the emitted light. The system has many commercial application including in-door lighting and research application including plant agriculture research fields.

  16. Rigorous simulations of emitting and non-emitting nano-optical structures

    NARCIS (Netherlands)

    Janssen, O.T.A.

    2010-01-01

    In the next decade, several applications of nanotechnology will change our lives. LED lighting is about to replace the common light bulb. The main advantages are its energy efficiency and long lifetime. LEDs can be much more efficient, when part of the emitted light that is currently trapped in the

  17. A Single-Stage High-Power-Factor Light-Emitting Diode (LED Driver with Coupled Inductors for Streetlight Applications

    Directory of Open Access Journals (Sweden)

    Chun-An Cheng

    2017-02-01

    Full Text Available This paper presents and implements a single-stage high-power-factor light-emitting diode (LED driver with coupled inductors, suitable for streetlight applications. The presented LED driver integrates an interleaved buck-boost power factor correction (PFC converter with coupled inductors and a half-bridge-type series-resonant converter cascaded with a full-bridge rectifier into a single-stage power conversion circuit. Coupled inductors inside the interleaved buck-boost PFC converter sub-circuit are designed to operate in discontinuous conduction mode (DCM for achieving input-current shaping, and the half-bridge-type series resonant converter cascaded with a full-bridge rectifier is designed for obtaining zero-voltage switching (ZVS on two power switches to reduce their switching losses. Analysis of operational modes and design equations for the presented LED driver are described and included. In addition, the presented driver features a high power factor, low total harmonic distortion (THD of input current, and soft switching. Finally, a prototype driver is developed and implemented to supply a 165-W-rated LED streetlight module with utility-line input voltages ranging from 210 to 230 V. Experimental results demonstrate that high power factor (>0.99, low utility-line current THD (<7%, low-output voltage ripples (<1%, low-output current ripples (<10%, and high circuit efficiency (>90% are obtained in the presented single-stage driver for LED streetlight applications.

  18. Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

    Science.gov (United States)

    Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

    2018-04-01

    We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

  19. Organic bistable light-emitting devices

    Science.gov (United States)

    Ma, Liping; Liu, Jie; Pyo, Seungmoon; Yang, Yang

    2002-01-01

    An organic bistable device, with a unique trilayer structure consisting of organic/metal/organic sandwiched between two outmost metal electrodes, has been invented. [Y. Yang, L. P. Ma, and J. Liu, U.S. Patent Pending, U.S. 01/17206 (2001)]. When the device is biased with voltages beyond a critical value (for example 3 V), the device suddenly switches from a high-impedance state to a low-impedance state, with a difference in injection current of more than 6 orders of magnitude. When the device is switched to the low-impedance state, it remains in that state even when the power is off. (This is called "nonvolatile" phenomenon in memory devices.) The high-impedance state can be recovered by applying a reverse bias; therefore, this bistable device is ideal for memory applications. In order to increase the data read-out rate of this type of memory device, a regular polymer light-emitting diode has been integrated with the organic bistable device, such that it can be read out optically. These features make the organic bistable light-emitting device a promising candidate for several applications, such as digital memories, opto-electronic books, and recordable papers.

  20. Eighth CW and High Average Power RF Workshop

    CERN Document Server

    2014-01-01

    We are pleased to announce the next Continuous Wave and High Average RF Power Workshop, CWRF2014, to take place at Hotel NH Trieste, Trieste, Italy from 13 to 16 May, 2014. This is the eighth in the CWRF workshop series and will be hosted by Elettra - Sincrotrone Trieste S.C.p.A. (www.elettra.eu). CWRF2014 will provide an opportunity for designers and users of CW and high average power RF systems to meet and interact in a convivial environment to share experiences and ideas on applications which utilize high-power klystrons, gridded tubes, combined solid-state architectures, high-voltage power supplies, high-voltage modulators, high-power combiners, circulators, cavities, power couplers and tuners. New ideas for high-power RF system upgrades and novel ways of RF power generation and distribution will also be discussed. CWRF2014 sessions will start on Tuesday morning and will conclude on Friday lunchtime. A visit to Elettra and FERMI will be organized during the workshop. ORGANIZING COMMITTEE (OC): Al...

  1. Electrically driven surface plasmon light-emitting diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of GaN light-emitting diodes (LEDs) with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  2. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

    Science.gov (United States)

    Li, Ting [Ventura, CA

    2011-04-26

    The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

  3. Coherent radiation from high-current electron beams of linear accelerators and its applications

    International Nuclear Information System (INIS)

    Okuda, Shuichi; Takanaka, Makoto; Nakamura, Mitsumi; Kato, Ryukou; Takahashi, Toshiharu; Nam, Soon-Kwon; Taniguchi, Ryouichi; Kojima, Takao

    2006-01-01

    The characteristics of the far-infrared light source using the coherent radiation emitted from a high-energy short electron bunch have been investigated. The coherent radiation has a continuous spectrum in a submillimeter to millimeter wavelength range and the brightness is relatively high. The spectrum of the radiation is determined by the longitudinal form factor of the electron bunch. The operational conditions of a high-current linear accelerator have been optimized using an electron bunch shape monitor. The coherent transition radiation light source has been applied to absorption spectroscopy for liquid water and to an imaging experiment for a leaf of rose

  4. Gap state related blue light emitting boron-carbon core shell structures

    International Nuclear Information System (INIS)

    Singh, Paviter; Kaur, Manpreet; Singh, Bikramjeet; Kaur, Gurpreet; Singh, Kulwinder; Kumar, Akshay; Kumar, Manjeet; Bala, Rajni; Thakur, Anup

    2016-01-01

    Boron-carbon core shell structures have been synthesized by solvo-thermal synthesis route. The synthesized material is highly pure. X-ray diffraction analysis confirms the reduction of reactants in to boron and carbon. Scanning Electron Microscopy (SEM) analysis showed that the shell is uniform with average thickness of 340 nm. Photo luminescence studies showed that the material is blue light emitting with CIE color coordinates: x=0.16085, y=0.07554.

  5. Dosimetry of x-rays from high-temperature plasmas

    International Nuclear Information System (INIS)

    Yamamoto, Takayoshi; Abe, Nobuyuki; Kawanishi, Masaharu

    1980-01-01

    Study on the dosimetry of ionizing radiations, especially of X-rays, emitted from high-temperature plasms has been made. As to the unpolarized Bremsstrahlung, a brief method to estimate electron temperatures with TLD is described and evaluation of average energy and current of the run-away electrons in the turbulent heating Tokamak is made by observing the half-value layer of the emitted X-rays and the total exposure per one shot of the Tokamak discharge. As to the polarized one, it is shown that the anisotropic electron temperature is related to the degree of polarization of the X-rays. Furthermore, reference is made to the possibility of developing such X-ray generators as can emit nearly monochromatic X-rays (characteristic X-rays) or polarized ones arbitrarily. (author)

  6. Single-mode temperature and polarisation-stable high-speed 850nm vertical cavity surface emitting lasers

    International Nuclear Information System (INIS)

    Nazaruk, D E; Blokhin, S A; Maleev, N A; Bobrov, M A; Pavlov, M M; Kulagina, M M; Vashanova, K A; Zadiranov, Yu M; Ustinov, V M; Kuzmenkov, A G; Vasil'ev, A P; Gladyshev, A G; Blokhin, A A; Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" data-affiliation=" (JSV Salut, 7 Larina Str, N Novgorod, 603950 (Russian Federation))" >Fefelov, A G

    2014-01-01

    A new intracavity-contacted design to realize temperature and polarization-stable high-speed single-mode 850 nm vertical cavity surface emitting lasers (VCSELs) grown by molecular-beam epitaxy is proposed. Temperature dependences of static and dynamic characteristics of the 4.5 pm oxide aperture InGaAlAs VCSEL were investigated in detail. Due to optimal gain-cavity detuning and enhanced carrier localization in the active region the threshold current remains below 0.75 mA for the temperature range within 20-90°C, while the output power exceeds 1 mW up to 90°C. Single-mode operation with side-mode suppression ratio higher than 30 dB and orthogonal polarization suppression ratio more than 18 dB was obtained in the whole current and temperature operation range. Device demonstrates serial resistance less than 250 Ohm, which is rather low for any type of single-mode short- wavelength VCSELs. VCSEL demonstrates temperature robust high-speed operation with modulation bandwidth higher than 13 GHz in the entire temperature range of 20-90°C. Despite high resonance frequency the high-speed performance of developed VCSELs was limited by the cut-off frequency of the parasitic low pass filter created by device resistances and capacitances. The proposed design is promising for single-mode high-speed VCSEL applications in a wide spectral range

  7. Highly efficient and simplified phosphorescence white organic light-emitting diodes based on synthesized deep-blue host and orange emitter

    Energy Technology Data Exchange (ETDEWEB)

    Koo, Ja Ryong; Lee, Seok Jae; Hyung, Gun Woo; Kim, Bo Young; Lee, Dong Hyung [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of); Kim, Woo Young [Department of Green Energy and Semiconductor Engineering, Hoseo University, Asan 336-795 (Korea, Republic of); Lee, Kum Hee [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Yoon, Seung Soo, E-mail: ssyoon@skku.edu [Department of Chemistry, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Kim, Young Kwan, E-mail: kimyk@hongik.ac.kr [Department of Information Display, Hongik University, Seoul 121-791 (Korea, Republic of)

    2013-10-01

    The authors have demonstrated a highly efficient and stable phosphorescent white organic light-emitting diode (WOLED), which has been achieved by doping only one orange phosphorescent emitter, Bis(5-benzoyl-2-(4-fluorophenyl)pyridinato-C,N)iridium(III) acetylacetonate into an appropriate deep blue phosphorescent host, 4,4'-bis(4-(triphenylsilyl)phenyl)-1,1'-binaphthyl as an emitting layer (EML). The WOLED has been achieved by effective confinement of triplet excitons to emit a warm white color. The optimized WOLED, with a simple structure as a hole transporting layer-EML-electron transporting layer, showed a maximum luminous efficiency of 22.38 cd/A, a maximum power efficiency of 12.01 lm/W, a maximum external quantum efficiency of 7.32%, and CIEx,y coordinates of (0.38,0.42) at 500 cd/m{sup 2}, respectively. - Highlights: • Highly efficient phosphorescent white organic light-emitting diode (WOLED) • Single emitting layer consists of synthesized deep blue host and orange emitter • The WOLED with high EL efficiencies due to efficient triplet exciton confinement.

  8. Unified Subharmonic Oscillation Conditions for Peak or Average Current Mode Control

    OpenAIRE

    Fang, Chung-Chieh

    2013-01-01

    This paper is an extension of the author's recent research in which only buck converters were analyzed. Similar analysis can be equally applied to other types of converters. In this paper, a unified model is proposed for buck, boost, and buck-boost converters under peak or average current mode control to predict the occurrence of subharmonic oscillation. Based on the unified model, the associated stability conditions are derived in closed forms. The same stability condition can be applied to ...

  9. Highly efficient phosphorescent blue and white organic light-emitting devices with simplified architectures

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chih-Hao, E-mail: chc@saturn.yzu.edu.tw [Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan 32003 (China); Ding, Yong-Shung; Hsieh, Po-Wei; Chang, Chien-Ping; Lin, Wei-Chieh [Department of Photonics Engineering, Yuan Ze University, Chung-Li, Taiwan 32003 (China); Chang, Hsin-Hua, E-mail: hhua3@mail.vnu.edu.tw [Department of Electro-Optical Engineering, Vanung University, Chung-Li, Taiwan 32061 (China)

    2011-09-01

    Blue phosphorescent organic light-emitting devices (PhOLEDs) with quantum efficiency close to the theoretical maximum were achieved by utilizing a double-layer architecture. Two wide-triplet-gap materials, 1,3-bis(9-carbazolyl)benzene and 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, were employed in the emitting and electron-transport layers respectively. The opposite carrier-transport characteristics of these two materials were leveraged to define the exciton formation zone and thus increase the probability of recombination. The efficiency at practical luminance (100 cd/m{sup 2}) was as high as 20.8%, 47.7 cd/A and 31.2 lm/W, respectively. Furthermore, based on the design concept of this simplified architecture, efficient warmish-white PhOLEDs were developed. Such two-component white organic light-emitting devices exhibited rather stable colors over a wide brightness range and yielded electroluminescence efficiencies of 15.3%, 33.3 cd/A, and 22.7 lm/W in the forward directions.

  10. Highly efficient phosphorescent blue and white organic light-emitting devices with simplified architectures

    International Nuclear Information System (INIS)

    Chang, Chih-Hao; Ding, Yong-Shung; Hsieh, Po-Wei; Chang, Chien-Ping; Lin, Wei-Chieh; Chang, Hsin-Hua

    2011-01-01

    Blue phosphorescent organic light-emitting devices (PhOLEDs) with quantum efficiency close to the theoretical maximum were achieved by utilizing a double-layer architecture. Two wide-triplet-gap materials, 1,3-bis(9-carbazolyl)benzene and 1,3,5-tri[(3-pyridyl)-phen-3-yl]benzene, were employed in the emitting and electron-transport layers respectively. The opposite carrier-transport characteristics of these two materials were leveraged to define the exciton formation zone and thus increase the probability of recombination. The efficiency at practical luminance (100 cd/m 2 ) was as high as 20.8%, 47.7 cd/A and 31.2 lm/W, respectively. Furthermore, based on the design concept of this simplified architecture, efficient warmish-white PhOLEDs were developed. Such two-component white organic light-emitting devices exhibited rather stable colors over a wide brightness range and yielded electroluminescence efficiencies of 15.3%, 33.3 cd/A, and 22.7 lm/W in the forward directions.

  11. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun; Quan, Li Na; Zhao, Yongbiao; Peng, Wei; Banavoth, Murali; Sarmah, Smritakshi P.; Yuan, Mingjian; Sinatra, Lutfan; AlYami, Noktan; Liu, Jiakai; Yassitepe, Emre; Yang, Zhenyu; Voznyy, Oleksandr; Comin, Riccardo; Hedhili, Mohamed N.; Mohammed, Omar F.; Lu, Zheng Hong; Kim, Dong Ha; Sargent, Edward H.; Bakr, Osman

    2016-01-01

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  12. Highly Efficient Perovskite-Quantum-Dot Light-Emitting Diodes by Surface Engineering

    KAUST Repository

    Pan, Jun

    2016-08-16

    A two-step ligand-exchange strategy is developed, in which the long-carbon-chain ligands on all-inorganic perovskite (CsPbX3, X = Br, Cl) quantum dots (QDs) are replaced with halide-ion-pair ligands. Green and blue light-emitting diodes made from the halide-ion-paircapped quantum dots exhibit high external quantum efficiencies compared with the untreated QDs.

  13. High-efficiency white organic light-emitting diodes using thermally activated delayed fluorescence

    International Nuclear Information System (INIS)

    Nishide, Jun-ichi; Hiraga, Yasuhide; Nakanotani, Hajime; Adachi, Chihaya

    2014-01-01

    White organic light-emitting diodes (WOLEDs) have attracted much attention recently, aimed for next-generation lighting sources because of their high potential to realize high electroluminescence efficiency, flexibility, and low-cost manufacture. Here, we demonstrate high-efficiency WOLED using red, green, and blue thermally activated delayed fluorescence materials as emissive dopants to generate white electroluminescence. The WOLED has a maximum external quantum efficiency of over 17% with Commission Internationale de l'Eclairage coordinates of (0.30, 0.38).

  14. High current photoemission with 10 picosecond uv pulses

    International Nuclear Information System (INIS)

    Fischer, J.; Srinivasan-Rao, T.; Tsang, T.

    1990-06-01

    The quantum efficiency and the optical damage threshold of various metals were explored with 10 ps, 266 nm, UV laser pulses. Efficiencies for Cu, Y, and Sm were: 1.4, 5, and 7 x 10 -4 , with damage thresholds about 100, 10, and 30 mJ/cm 2 . This would permit over 1 μC/cm 2 or current densities exceeding 100 kA/cm 2 . High charge and current densities of up to 66 kA/cm 2 were obtained on 0.25 mm diam cathodes, and 21 kA/cm 2 on a 3 mm diam yttrium cathode. The maximum currents were limited by space charge and the dc field. The experiments with small area illumination indicate that the emitted electrons spread transversely due to Coulomb repulsion and their initial transverse velocity. This increases the effective area above the cathode, reduces the space charge effect and increases emission density on the cathode. The quantum efficiency can be increased substantially by enhancing the field on the surface by either a suitable electrode geometry or microstructures on it. 14 refs., 12 figs., 3 tabs

  15. Improvement in Brightness Uniformity by Compensating for the Threshold Voltages of Both the Driving Thin-Film Transistor and the Organic Light-Emitting Diode for Active-Matrix Organic Light-Emitting Diode Displays

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2014-01-01

    Full Text Available This paper proposes a novel pixel circuit design and driving method for active-matrix organic light-emitting diode (AM-OLED displays that use low-temperature polycrystalline-silicon thin-film transistors (LTPS-TFTs as driving element. The automatic integrated circuit modeling simulation program with integrated circuit emphasis (AIM-SPICE simulator was used to verify that the proposed pixel circuit, which comprises five transistors and one capacitor, can supply uniform output current. The voltage programming method of the proposed pixel circuit comprises three periods: reset, compensation with data input, and emission periods. The simulated results reflected excellent performance. For instance, when ΔVTH=±0.33 V, the average error rate of the OLED current variation was low (<0.8%, and when ΔVTH_OLED=+0.33 V, the error rate of the OLED current variation was 4.7%. Moreover, when the I×R (current × resistance drop voltage of a power line was 0.3 V, the error rate of the OLED current variation was 5.8%. The simulated results indicated that the proposed pixel circuit exhibits high immunity to the threshold voltage deviation of both the driving poly-Si TFTs and OLEDs, and simultaneously compensates for the I×R drop voltage of a power line.

  16. High-average-power diode-pumped Yb: YAG lasers

    International Nuclear Information System (INIS)

    Avizonis, P V; Beach, R; Bibeau, C M; Emanuel, M A; Harris, D G; Honea, E C; Monroe, R S; Payne, S A; Skidmore, J A; Sutton, S B

    1999-01-01

    A scaleable diode end-pumping technology for high-average-power slab and rod lasers has been under development for the past several years at Lawrence Livermore National Laboratory (LLNL). This technology has particular application to high average power Yb:YAG lasers that utilize a rod configured gain element. Previously, this rod configured approach has achieved average output powers in a single 5 cm long by 2 mm diameter Yb:YAG rod of 430 W cw and 280 W q-switched. High beam quality (M(sup 2)= 2.4) q-switched operation has also been demonstrated at over 180 W of average output power. More recently, using a dual rod configuration consisting of two, 5 cm long by 2 mm diameter laser rods with birefringence compensation, we have achieved 1080 W of cw output with an M(sup 2) value of 13.5 at an optical-to-optical conversion efficiency of 27.5%. With the same dual rod laser operated in a q-switched mode, we have also demonstrated 532 W of average power with an M(sup 2) and lt; 2.5 at 17% optical-to-optical conversion efficiency. These q-switched results were obtained at a 10 kHz repetition rate and resulted in 77 nsec pulse durations. These improved levels of operational performance have been achieved as a result of technology advancements made in several areas that will be covered in this manuscript. These enhancements to our architecture include: (1) Hollow lens ducts that enable the use of advanced cavity architectures permitting birefringence compensation and the ability to run in large aperture-filling near-diffraction-limited modes. (2) Compound laser rods with flanged-nonabsorbing-endcaps fabricated by diffusion bonding. (3) Techniques for suppressing amplified spontaneous emission (ASE) and parasitics in the polished barrel rods

  17. Statistical theory for estimating sampling errors of regional radiation averages based on satellite measurements

    Science.gov (United States)

    Smith, G. L.; Bess, T. D.; Minnis, P.

    1983-01-01

    The processes which determine the weather and climate are driven by the radiation received by the earth and the radiation subsequently emitted. A knowledge of the absorbed and emitted components of radiation is thus fundamental for the study of these processes. In connection with the desire to improve the quality of long-range forecasting, NASA is developing the Earth Radiation Budget Experiment (ERBE), consisting of a three-channel scanning radiometer and a package of nonscanning radiometers. A set of these instruments is to be flown on both the NOAA-F and NOAA-G spacecraft, in sun-synchronous orbits, and on an Earth Radiation Budget Satellite. The purpose of the scanning radiometer is to obtain measurements from which the average reflected solar radiant exitance and the average earth-emitted radiant exitance at a reference level can be established. The estimate of regional average exitance obtained will not exactly equal the true value of the regional average exitance, but will differ due to spatial sampling. A method is presented for evaluating this spatial sampling error.

  18. High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

    Science.gov (United States)

    Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

    2010-10-01

    White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

  19. Injection current dependences of electroluminescence transition energy in InGaN/GaN multiple quantum wells light emitting diodes under pulsed current conditions

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Feng; Ikeda, Masao, E-mail: mikeda2013@sinano.ac.cn; Liu, Jianping; Zhang, Shuming [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Zhou, Kun; Yang, Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Institute of Semiconductors (CAS), Beijing 100083 (China); Liu, Zongshun [Institute of Semiconductors (CAS), Beijing 100083 (China)

    2015-07-21

    Injection current dependences of electroluminescence transition energy in blue InGaN/GaN multiple quantum wells light emitting diodes (LEDs) with different quantum barrier thicknesses under pulsed current conditions have been analyzed taking into account the related effects including deformation caused by lattice strain, quantum confined Stark effects due to polarization field partly screened by carriers, band gap renormalization, Stokes-like shift due to compositional fluctuations which are supposed to be random alloy fluctuations in the sub-nanometer scale, band filling effect (Burstein-Moss shift), and quantum levels in finite triangular wells. The bandgap renormalization and band filling effect occurring at high concentrations oppose one another, however, the renormalization effect dominates in the concentration range studied, since the band filling effect arising from the filling in the tail states in the valence band of quantum wells is much smaller than the case in the bulk materials. In order to correlate the carrier densities with current densities, the nonradiative recombination rates were deduced experimentally by curve-fitting to the external quantum efficiencies. The transition energies in LEDs both with 15 nm quantum barriers and 5 nm quantum barriers, calculated using full strengths of theoretical macroscopic polarization given by Barnardini and Fiorentini [Phys. Status Solidi B 216, 391 (1999)] are in excellent accordance with experimental results. The LED with 5 nm barriers has been shown to exhibit a higher transition energy and a smaller blue shift than those of LED with 15 nm barriers, which is mainly caused by the smaller internal polarization field in the quantum wells.

  20. High performance tunnel injection InGaN/GaN quantum Dot light emitting diodes emitting in the green (λ=495nm)

    KAUST Repository

    Zhang, Meng

    2011-05-01

    InGaN/GaN self-organized quantum dots with density of (2-5)×10 10 cm-2, internal quantum efficiency of 32% and a reduced recombination lifetime of 0.6 ns were grown by plasma assisted molecular beam epitaxy. The photoluminescence spectra of the dots peak at 495 nm at 300 K. The characteristics of tunnel injection InGaN/GaN quantum dot light emitting diodes are presented. The current density at maximum efficiency is 90.2 A/cm 2, which is superior to equivalent multiquantum well devices. © 2010 Elsevier B.V. All rights reserved.

  1. Highly efficient exciplex organic light-emitting diodes using thermally activated delayed fluorescent emitters as donor and acceptor materials

    Science.gov (United States)

    Jeon, Sang Kyu; Yook, Kyoung Soo; Lee, Jun Yeob

    2016-06-01

    Highly efficient exciplex type organic light-emitting diodes were developed using thermally activated delayed fluorescent emitters as donors and acceptors of an exciplex. Blue emitting bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone (DMAC-DPS) was a donor and 9,9‧-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)-1,3-phenylene)bis(9H-carbazole) (DDCzTrz) and 9,9‧,9″-(5-(4,6-diphenyl-1,3,5-triazin-2-yl)benzene-1,2,3-triyl)tris(9H-carbazole) (TCzTrz) were acceptor materials. The exciplexes of DMAC-DPS:TCzTrz and DMAC-DPS:DDCzTrz resulted in high photoluminescence quantum yield and high quantum efficiency in the green exciplex organic light-emitting diodes. High quantum efficiencies of 13.4% and 15.3% were obtained in the DMAC-DPS:DDCzTrz and DMAC-DPS:TCzTrz exciplex devices.

  2. Concentrated ion beam emitted from an enlarged cylindrical-anode-layer Hall plasma accelerator and mechanism

    Energy Technology Data Exchange (ETDEWEB)

    Geng, S. F.; Wang, C. X. [Southwestern Institute of Physics, Chengdu 610041 (China); Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong); Tang, D. L.; Qiu, X. M. [Southwestern Institute of Physics, Chengdu 610041 (China); Chu, Paul K. [Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon (Hong Kong)

    2013-01-28

    An enlarged cylindrical-anode-layer Hall plasma accelerator with an outlet diameter of 150 mm is experimentally demonstrated to produce a concentrated ion beam, especially at a high discharge voltage, with a high current utilization efficiency of up to {approx}0.9. Numerical investigation based on the three-dimensional particle-in-cell method is performed to study the ion dynamics and elucidate the origin of the ion beam characteristics. The simulation results reveal that the equipotential lines play an important role in the surface near the anode emitting the ions. The ion emitting surface is determined by the magnetic field lines near the anode and the magnetic mirror contributes to the concentrated beam significantly. The high current utilization efficiency results from the appropriate obliquity of the magnetic mirror.

  3. 2 W high efficiency PbS mid-infrared surface emitting laser

    Science.gov (United States)

    Ishida, A.; Sugiyama, Y.; Isaji, Y.; Kodama, K.; Takano, Y.; Sakata, H.; Rahim, M.; Khiar, A.; Fill, M.; Felder, F.; Zogg, H.

    2011-09-01

    High efficiency laser operation with output power exceeding 2 W was obtained for vertical external-cavity PbS based IV-VI compound surface emitting quantum-well structures. The laser showed external quantum efficiency as high as 16%. Generally, mid-infrared III-V or II-VI semiconductor laser operation utilizing interband electron transitions are restricted by Auger recombination and free carrier absorption. Auger recombination is much lower in the IV-VI semiconductors, and the free-carrier absorption is significantly reduced by an optically pumped laser structure including multi-step optical excitation layers.

  4. Exciplex-Forming Cohost for High Efficiency and High Stability Phosphorescent Organic Light-Emitting Diodes.

    Science.gov (United States)

    Shih, Chun-Jen; Lee, Chih-Chien; Chen, Ying-Hao; Biring, Sajal; Kumar, Gautham; Yeh, Tzu-Hung; Sen, Somaditya; Liu, Shun-Wei; Wong, Ken-Tsung

    2018-01-17

    An exciplex forming cohost system is employed to achieve a highly efficient organic light-emitting diode (OLED) with good electroluminescent lifetime. The exciplex is formed at the interfacial contact of a conventional star-shaped carbazole hole-transporting material, 4,4',4″-tris(N-carbazolyl)-triphenylamine (TCTA), and a triazine electron-transporting material, 2,4,6-tris[3-(1H-pyrazol-1-yl)phenyl]-1,3,5-triazine (3P-T2T). The excellent combination of TCTA and 3P-T2T is applied as the cohost of a common green phosphorescent emitter with almost zero energy loss. When Ir(ppy) 2 (acac) is dispersed in such exciplex cohost system, OLED device with maximum external quantum efficiency of 29.6%, the ultrahigh power efficiency of 147.3 lm/W, and current efficiency of 107 cd/A were successfully achieved. More importantly, the OLED device showed a low-efficiency roll-off and an operational lifetime (τ 80 ) of ∼1020 min with the initial brightness of 2000 cd/m 2 , which is 56 times longer than the reference device. The significant difference of device stability was attributed to the degradation of exciplex system for energy transfer process, which was investigated by the photoluminescence aging measurement at room temperature and 100 K, respectively.

  5. Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

    Science.gov (United States)

    Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

    2015-04-08

    High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Light extraction in planar light-emitting diode with nonuniform current injection: model and simulation.

    Science.gov (United States)

    Khmyrova, Irina; Watanabe, Norikazu; Kholopova, Julia; Kovalchuk, Anatoly; Shapoval, Sergei

    2014-07-20

    We develop an analytical and numerical model for performing simulation of light extraction through the planar output interface of the light-emitting diodes (LEDs) with nonuniform current injection. Spatial nonuniformity of injected current is a peculiar feature of the LEDs in which top metal electrode is patterned as a mesh in order to enhance the output power of light extracted through the top surface. Basic features of the model are the bi-plane computation domain, related to other areas of numerical grid (NG) cells in these two planes, representation of light-generating layer by an ensemble of point light sources, numerical "collection" of light photons from the area limited by acceptance circle and adjustment of NG-cell areas in the computation procedure by the angle-tuned aperture function. The developed model and procedure are used to simulate spatial distributions of the output optical power as well as the total output power at different mesh pitches. The proposed model and simulation strategy can be very efficient in evaluation of the output optical performance of LEDs with periodical or symmetrical configuration of the electrodes.

  7. Highly Flexible and Efficient Fabric-Based Organic Light-Emitting Devices for Clothing-Shaped Wearable Displays.

    Science.gov (United States)

    Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol

    2017-07-25

    Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.

  8. High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

    2006-01-01

    In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350 nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN/AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN/AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800x800 μm 2 ) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340 nm, the measured differential on-series resistance is 3 Ω with electroluminescence spectrum full width at half maximum of 18 nm. The output power under dc bias saturates at 0.5 mW, while under pulsed operation it saturates at approximately 700 mA to a value of 3 mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350 nm were investigated under dc operation and the output power saturates at 4.5 mW under 200 mA drive current

  9. Development of a Highly Efficient Hybrid White Organic-Light-Emitting Diode with a Single Emission Layer by Solution Processing.

    Science.gov (United States)

    Wu, Jun-Yi; Chen, Show-An

    2018-02-07

    We use a mixed host, 2,6-bis[3-(carbazol-9-yl)phenyl]pyridine blended with 20 wt % tris(4-carbazoyl-9-ylphenyl)amine, to lower the hole-injection barrier, along with the bipolar and high-photoluminescence-quantum-yield (Φ p = 84%), blue thermally activated delay fluorescence (TADF) material of 9,9-dimethyl-9,10-dihydroacridine-2,4,6-triphenyl-1,3,5-triazine (DMAC-TRZ) as a blue dopant to compose the emission layer for the fabrication of a TADF blue organic-light-emitting diode (BOLED). The device is highly efficient with the following performance parameters: maximum brightness (B max ) = 57586 cd/m 2 , maximum current efficiency (CE max ) = 35.3 cd/A, maximum power efficiency (PE max ) = 21.4 lm/W, maximum external quantum efficiency (EQE max ) = 14.1%, and CIE coordinates (0.18, 0.42). This device has the best performance recorded among the reported solution-processed TADF BOLEDs and has a low efficiency roll-off: at brightness values of 1000 and 5000 cd/m 2 , its CEs are close, being 35.1 and 30.1 cd/A, respectively. Upon further doping of the red phosphor Ir(dpm)PQ 2 (emission peak λ max = 595 nm) into the blue emission layer, we obtained a TADF-phosphor hybrid white organic-light-emitting diode (T-P hybrid WOLED) with high performance: B max = 43594 cd/m 2 , CE max = 28.8 cd/A, PE max = 18.1 lm/W, and CIE coordinates (0.38, 0.44). This B max = 43594 cd/m 2 is better than that of the vacuum-deposited WOLED with a blue TADF emitter, 10000 cd/m 2 . This is also the first report on a T-P hybrid WOLED with a solution-processed emitting layer.

  10. Enhanced device performances of a new inverted top-emitting OLEDs with relatively thick Ag electrode.

    Science.gov (United States)

    Park, So-Ra; Suh, Min Chul

    2018-02-19

    To improve the device performances of top-emitting organic light emitting diodes (TEOLEDs), we developed a new inverted TEOLEDs structure with silver (Ag) metal as a semi-transparent top electrode. Especially, we found that the use of relatively thick Ag electrode without using any carrier injection layer is beneficial to realize highly efficient device performances. Also, we could insert very thick overlying hole transport layer (HTL) on the emitting layer (EML) which could be very helpful to suppress the surface plasmon polariton (SPP) coupling if it is applied to the common bottom-emission OLEDs (BEOLEDs). As a result, we could realize noteworthy high current efficiency of approximately ~188.1 cd/A in our new inverted TEOLEDs with 25 nm thick Ag electrode.

  11. Peculiarities of electrooptical characteristics of gallium phosphide light-emitting diodes in high injection level conditions

    Directory of Open Access Journals (Sweden)

    O. M. Hontaruk

    2015-04-01

    Full Text Available Electroluminescence of green N-doped gallium phosphide light-emitting diodes was studied. The negative differential resistance region in the current-voltage characteristics was found at low temperature (Т ≤ 90 К. Possible reason of this phenomenon is the redistribution of recombinational flows between annihilation channels on isolated nitrogen atoms and annihilation channel on the NN1 pairs.

  12. Recent developments in white light emitting diodes

    Science.gov (United States)

    Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

    2018-05-01

    In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application

  13. Surface ionization ion source with high current

    International Nuclear Information System (INIS)

    Fang Jinqing; Lin Zhizhou; Yu Lihua; Zhan Rongan; Huang Guojun; Wu Jianhua

    1986-04-01

    The working principle and structure of a surface ionization ion source with high current is described systematically. Some technological keypoints of the ion source are given in more detail, mainly including: choosing and shaping of the material of the surface ionizer, heating of the ionizer, distributing of working vapour on the ionizer surface, the flow control, the cooling problem at the non-ionization surface and the ion optics, etc. This ion source has been used since 1972 in the electromagnetic isotope separator with 180 deg angle. It is suitable for separating isotopes of alkali metals and rare earth metals. For instance, in the case of separating Rubidium, the maximum ion current of Rbsup(+) extracted from the ion source is about 120 mA, the maximum ion current accepted by the receiver is about 66 mA, the average ion current is more than 25 mA. The results show that our ion source have advantages of high ion current, good characteristics of focusing ion beam, working stability and structure reliability etc. It may be extended to other fields. Finally, some interesting phenomena in the experiment are disccused briefly. Some problems which should be investigated are further pointed out

  14. Multiplicity and correlated energy of gamma rays emitted in the spontaneous fission of Californium-252

    International Nuclear Information System (INIS)

    Brunson, G.S. Jr.

    1982-06-01

    An array of eight high-speed plastic scintillation detectors has been used to infer a mathematical model for the emission multipliciy of prompt gammas in the spontaneous fission of 252 Cf. Exceptional time resolution and coincidence capability permitted the separation of gammas from fast neutrons over a flight path of approximately 10 cm. About 20 different distribution models were tested. The average energy of the prompt gammas is inversely related to the number emitted; however, this inverse relationship is not strong and the total gamma energy does increase with increasing gamma number. An extension of the experiment incorporated a lithium-drifted germanium gamma spectrometer that resolved nearly 100 discrete gammas associated with fission. Of these gammas, some were preferentially associated with fission in which few gammas were emitted. Certain others were more frequent when many gammas were emitted. Results are presented

  15. Simulation of electron and ion bipolar flow in high current diode with magnetic insulation

    International Nuclear Information System (INIS)

    Vrba, P.; Engelko, V.I.

    1990-08-01

    Numerical simulation of the formation of the collector ion flow in a magnetically insulated ion diode (MID) with a hollow cylindrical and cone-shaped cathode was studied. Such cathodes are often used for the production of tubular high current microsecond electron beams. The ions, emitted by the collector and born as a result of ionization of the residual gas by the electron beam, are focused into the cathode plasma region. This effect can adversely influence the diode operation

  16. Study of surface leakage current of AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Chen, YongHe; Zhang, Kai; Cao, MengYi; Zhao, ShengLei; Zhang, JinCheng; Hao, Yue; Ma, XiaoHua

    2014-01-01

    Temperature-dependent surface current measurements were performed to analyze the mechanism of surface conductance of AlGaN/GaN channel high-electron-mobility transistors by utilizing process-optimized double gate structures. Different temperatures and electric field dependence have been found in surface current measurements. At low electric field, the mechanism of surface conductance is considered to be two-dimensional variable range hopping. At elevated electric field, the Frenkel–Poole trap assisted emission governs the main surface electrons transportation. The extracted energy barrier height of electrons emitting from trapped state near Fermi energy level into a threading dislocations-related continuum state is 0.38 eV. SiN passivation reduces the surface leakage current by two order of magnitude and nearly 4 orders of magnitude at low and high electric fields, respectively. SiN also suppresses the Frenkel–Poole conductance at high temperature by improving the surface states of AlGaN/GaN. A surface treatment process has been introduced to further suppress the surface leakage current at high temperature and high field, which results in a decrease in surface current of almost 3 orders of magnitude at 476 K

  17. Array of organic thin film transistors integrated with organic light emitting diodes on a plastic substrate

    International Nuclear Information System (INIS)

    Ryu, Gi-Seong; Choe, Ki-Beom; Song, Chung-Kun

    2006-01-01

    In order to demonstrate the possible application of an organic thin film transistor (OTFT) to a flexible active matrix organic light emitting diode (OLED) an array of 64 x 64 pixels was fabricated on a 4-in. size poly-ethylene-terephehalate substrate. Each pixel was composed of one OTFT integrated with one OLED. OTFTs successfully drove OLEDs by varying current in a wide range and some images were displayed on the array by emitting green light. The OTFTs used poly(4-vinylphenol) for the gate and pentacene for the semiconductor taking account compatibility with the PET substrate. The average mobility in the array was 0.2 cm 2 /V.s, which was reduced from 1.0 cm 2 /V.s in a single OTFT, and its variation over the entire substrate was 10%

  18. High efficiency AlGaInN-based light emitting diode in the 360-380 nm wavelength range

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Hisao; Wang, Hong-Xing; Sato, Daisuke; Takaki, Ryohei; Wada, Naoki; Tanahashi, Tetsuya; Yamashita, Kenji; Kawano, Shunsuke; Mizobuchi, Takashi; Dempo, Akihiko; Morioka, Kenji; Kimura, Masahiro; Nohda, Suguru [Nitride Semiconductors Co., Ltd., 115-7 Itayajima, Akinokami, Seto-cho, Naruto, Tokushima 771-0360 (Japan); Sugahara, Tomoya [Satellite Venture Business Laboratory, The University of Tokushima (Japan); Sakai, Shiro [Department of Electrical and Electronic Engineering, The University of Tokushima, 2-1 Minami-josanjima, Tokushima 770-8506 (Japan)

    2003-11-01

    High performance LEDs emitting in the wavelength range 360-380 nm, are fabricated on sapphire substrates by one-time metalorganic chemical vapor deposition (MOCVD) without using epitaxial lateral overgrowth (ELO) or similar techniques. By improving layer structures and growth conditions, the output power of the LEDs was much improved. The light output power of the LEDs at an injection current of 20 mA is 3.2 mW, 2.5 mW and 1 mW at wavelengths of 378 nm, 373 nm and 363 nm, which correspond to an external quantum efficiency of 4.8%, 3.8% and 1.4%, respectively. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. High efficiency electrophosphorescence from bilayer organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Li Minghang; Lin, Ming-Te; Shepherd, Nigel D [Department of Material Science and Engineering, University of North Texas, Denton, TX (United States); Chen, Wei-Hsuan; Oswald, Iain; Omary, Mohammad [Department of Chemeistry, University of North Texas, Denton, TX (United States)

    2011-09-14

    An electron mobility of 2.7 x 10{sup -5} cm{sup 2} V{sup -1} s{sup -1} was measured for the phosphorescent emitter bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II)(Pt(ptp)2), which prompted its evaluation as both the emissive layer and electron transport layer in organic light emitting diodes with a simple bilayer structure. Power and external quantum efficiencies of 54.0 {+-} 0.2 lm W{sup -1} and 15.9% were obtained, which as far as we could ascertain are amongst the highest reported values for bilayer devices. We ascribe the high device efficiency to the combination of the high electron mobility, short excited-state lifetime (117 ns) and high luminescence quantum yield (60%) of the bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II). The colour temperature of the devices was 2855 K at 5 V, which places the emission in the 'warm' light spectral region.

  20. Green Fluorescent Organic Light Emitting Device with High Luminance

    Directory of Open Access Journals (Sweden)

    Ning YANG

    2014-06-01

    Full Text Available In this work, we fabricated the small molecule green fluorescent bottom-emission organic light emitting device (OLED with the configuration of glass substrate/indium tin oxide (ITO/Copper Phthalocyanine (CuPc 25 nm/ N,N’-di(naphthalen-1-yl-N,N’-diphenyl-benzidine (NPB 45 nm/ tris(8-hydroxyquinoline aluminium (Alq3 60 nm/ Lithium fluoride (LiF 1 nm/Aluminum (Al 100 nm where CuPc and NPB are the hole injection layer and the hole transport layer, respectively. CuPc is introduced in this device to improve carrier injection and efficiency. The experimental results indicated that the turn-on voltage is 2.8 V with a maximum luminance of 23510 cd/m2 at 12 V. The maximum current efficiency and power efficiency are 4.8 cd/A at 100 cd/m2 and 4.2 lm/W at 3 V, respectively. The peak of electroluminance (EL spectrum locates at 530 nm which is typical emission peak of green light. In contrast, the maximum current efficiency and power efficiency of the device without CuPc are only 4.0 cd/A at 100 mA/cm2 and 4.2 lm/W at 3.6 V, respectively.

  1. Predicting Freshman Grade Point Average From College Admissions Test Scores and State High School Test Scores

    OpenAIRE

    Koretz, Daniel; Yu, C; Mbekeani, Preeya Pandya; Langi, M.; Dhaliwal, Tasminda Kaur; Braslow, David Arthur

    2016-01-01

    The current focus on assessing “college and career readiness” raises an empirical question: How do high school tests compare with college admissions tests in predicting performance in college? We explored this using data from the City University of New York and public colleges in Kentucky. These two systems differ in the choice of college admissions test, the stakes for students on the high school test, and demographics. We predicted freshman grade point average (FGPA) from high school GPA an...

  2. Further improvement in the light output power of InGaN-based light emitting diodes by reflective current blocking design

    International Nuclear Information System (INIS)

    Tsai, Chun-Fu; Su, Yan-Kuin; Lin, Chun-Liang

    2011-01-01

    In this study, the fabrication and characterization of InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) with further improvement by the design of a reflective current blocking layer (CBL) were described, and these are demonstrated to be an inexpensive and feasible way for improving the performance of LEDs. With the reflective CBL, not only was the injected current forced to spread outside instead of flowing directly downward under a p-pad, but the light generated from the active region could also be extracted outside of the LED by reflection under the p-pad. At 20 mA, as compared to the conventional LED, the light output power of the LEDs with the normal and reflective CBL can be increased by 15.7% and 25.8%, respectively. We found that the forward voltages of the LEDs with CBL structure were both about 3.7 V at 20 mA, which was slightly higher than that of the conventional LED (3.6 V). In our experiment, the further increase in the light output power of the reflective CBL LED could be attributed to more current injection into the light-emitting active region outside of the p-pad by the CBL and a reduction in optical absorption at the p-pad with more extraction by the reflective design

  3. Vegetable and Fruit Intakes of On-Reserve First Nations Schoolchildren Compared to Canadian Averages and Current Recommendations

    Directory of Open Access Journals (Sweden)

    Ian D. Martin

    2012-04-01

    Full Text Available This study investigated, in on-reserve First Nations (FN youth in Ontario, Canada, the following: (a the intakes of vegetable and fruit, “other” foods and relevant nutrients as compared to current recommendations and national averages, (b current prevalence rates of overweight and obesity and (c the relationship between latitude and dietary intakes. Twenty-four-hour diet recalls were collected via the Waterloo Web-Based Eating Behaviour Questionnaire (WEB-Q (n = 443. Heights and weights of participants were self reported using measured values and Body Mass Index was categorized using the International Obesity Task Force cutoffs. Food group and nutrient intakes were compared to current standards, Southern Ontario Food Behaviour data and the Canadian Community Health Survey, Cycle 2.2, using descriptive statistics. Mean vegetable and fruit, fibre and folate intakes were less than current recommendations. Girls aged 14–18 years had mean intakes of vitamin A below current recommendations for this sub-group; for all sub-groups, mean intakes of vegetables and fruit were below Canadian averages. All sub-groups also had intakes of all nutrients and food groups investigated that were less than those observed in non-FN youth from Southern Ontario, with the exception of “other” foods in boys 12–18 years. Prevalence rates of overweight and obesity were 31.8% and 19.6%, respectively, exceeding rates in the general population. Dietary intakes did not vary consistently by latitude (n = 248, as revealed by ANOVA. This study provided a unique investigation of the dietary intakes of on-reserve FN youth in Ontario and revealed poor intakes of vegetables and fruit and related nutrients and high intakes of “other” foods. Prevalence rates of overweight and obesity exceed those of the general population.

  4. Vegetable and Fruit Intakes of On-Reserve First Nations Schoolchildren Compared to Canadian Averages and Current Recommendations

    Science.gov (United States)

    Gates, Allison; Hanning, Rhona M.; Gates, Michelle; Skinner, Kelly; Martin, Ian D.; Tsuji, Leonard J. S.

    2012-01-01

    This study investigated, in on-reserve First Nations (FN) youth in Ontario, Canada, the following: (a) the intakes of vegetable and fruit, “other” foods and relevant nutrients as compared to current recommendations and national averages, (b) current prevalence rates of overweight and obesity and (c) the relationship between latitude and dietary intakes. Twenty-four-hour diet recalls were collected via the Waterloo Web-Based Eating Behaviour Questionnaire (WEB-Q) (n = 443). Heights and weights of participants were self reported using measured values and Body Mass Index was categorized using the International Obesity Task Force cutoffs. Food group and nutrient intakes were compared to current standards, Southern Ontario Food Behaviour data and the Canadian Community Health Survey, Cycle 2.2, using descriptive statistics. Mean vegetable and fruit, fibre and folate intakes were less than current recommendations. Girls aged 14–18 years had mean intakes of vitamin A below current recommendations for this sub-group; for all sub-groups, mean intakes of vegetables and fruit were below Canadian averages. All sub-groups also had intakes of all nutrients and food groups investigated that were less than those observed in non-FN youth from Southern Ontario, with the exception of “other” foods in boys 12–18 years. Prevalence rates of overweight and obesity were 31.8% and 19.6%, respectively, exceeding rates in the general population. Dietary intakes did not vary consistently by latitude (n = 248), as revealed by ANOVA. This study provided a unique investigation of the dietary intakes of on-reserve FN youth in Ontario and revealed poor intakes of vegetables and fruit and related nutrients and high intakes of “other” foods. Prevalence rates of overweight and obesity exceed those of the general population. PMID:22690200

  5. Effect of high current density to defect generation of blue LED and its characterization with transmission electron microscope

    Science.gov (United States)

    Gunawan, R.; Sugiarti, E.; Isnaeni; Purawiardi, R. I.; Widodo, H.; Muslimin, A. N.; Yuliasari; Ronaldus, C. E.; Prastomo, N.; Hastuty, S.

    2018-03-01

    The optical, electrical and structural characteristics of InGaN-based blue light-emitting diodes (LEDs) were investigated to identify the degradation of LED before and after current injection. The sample was injected by high current of 200 A/cm2 for 5 and 20 minutes. It was observed that injection of current shifts light intensity and wavelength characteristics that indicated defect generation. Transmission Electron Microscopy (TEM) characterization was carried out in order to clarify the structure degradation caused by defect in active layer which consisted of 14 quantum well with thickness of about 5 nm and confined with barrier layer with thickness of about 12 nm. TEM results showed pre-existing defect in LED before injection with high current. Furthermore, discontinue and edge defect was found in dark spot region of LED after injection with high current.

  6. One-Step Preparation of Blue-Emitting (La,Ca)Si3(O,N)5:Ce3+ Phosphors for High-Color Rendering White Light-Emitting Diodes

    Science.gov (United States)

    Yaguchi, Atsuro; Suehiro, Takayuki; Sato, Tsugio; Hirosaki, Naoto

    2011-02-01

    Highly phase-pure (La,Ca)Si3(O,N)5:Ce3+ blue-emitting phosphors were successfully synthesized via the one-step solid-state reaction from the system La2O3-CaO-CeO2-Si3N4. The synthesized (La,Ca)Si3(O,N)5:Ce3+ exhibits tunable blue broadband emission with the dominant wavelength of 466-479 nm and the external quantum efficiency up to ˜45% under 380 nm near-UV (NUV) excitation. Spectral simulations of the trichromatic white light-emitting diodes (LEDs) using (La,Ca)Si3(O,N)5:Ce3+ demonstrated markedly higher color rendering index Ra values of 93-95, compared to 76-90 attained by the systems using a conventional BAM:Eu2+ phosphor or InGaN blue LED. The present achievement indicates the promising applicability of (La,Ca)Si3(O,N)5:Ce3+ as a blue luminescent source for NUV-converting high-color rendering white LEDs.

  7. A spectral measurement method for determining white OLED average junction temperatures

    Science.gov (United States)

    Zhu, Yiting; Narendran, Nadarajah

    2016-09-01

    The objective of this study was to investigate an indirect method of measuring the average junction temperature of a white organic light-emitting diode (OLED) based on temperature sensitivity differences in the radiant power emitted by individual emitter materials (i.e., "blue," "green," and "red"). The measured spectral power distributions (SPDs) of the white OLED as a function of temperature showed amplitude decrease as a function of temperature in the different spectral bands, red, green, and blue. Analyzed data showed a good linear correlation between the integrated radiance for each spectral band and the OLED panel temperature, measured at a reference point on the back surface of the panel. The integrated radiance ratio of the spectral band green compared to red, (G/R), correlates linearly with panel temperature. Assuming that the panel reference point temperature is proportional to the average junction temperature of the OLED panel, the G/R ratio can be used for estimating the average junction temperature of an OLED panel.

  8. High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    M.R. Philip

    2017-06-01

    Full Text Available We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111 by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux ratio. The devices demonstrate relatively high (>40% internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm2.

  9. High-energy terahertz wave parametric oscillator with a surface-emitted ring-cavity configuration.

    Science.gov (United States)

    Yang, Zhen; Wang, Yuye; Xu, Degang; Xu, Wentao; Duan, Pan; Yan, Chao; Tang, Longhuang; Yao, Jianquan

    2016-05-15

    A surface-emitted ring-cavity terahertz (THz) wave parametric oscillator has been demonstrated for high-energy THz output and fast frequency tuning in a wide frequency range. Through the special optical design with a galvano-optical scanner and four-mirror ring-cavity structure, the maximum THz wave output energy of 12.9 μJ/pulse is achieved at 1.359 THz under the pump energy of 172.8 mJ. The fast THz frequency tuning in the range of 0.7-2.8 THz can be accessed with the step response of 600 μs. Moreover, the maximum THz wave output energy from this configuration is 3.29 times as large as that obtained from the conventional surface-emitted THz wave parametric oscillator with the same experimental conditions.

  10. Investigations of thin p-GaN light-emitting diodes

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    2016-01-01

    We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  11. Suppression of roll-off characteristics of organic light-emitting diodes by narrowing current injection/transport area to 50 nm

    Energy Technology Data Exchange (ETDEWEB)

    Hayashi, Kyohei, E-mail: k-hayashi@bioorg.rcast.u-tokyo.ac.jp; Inoue, Munetomo; Yoshida, Kou [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Nakanotani, Hajime [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); JST, ERATO, Adachi Molecular Exciton Engineering Project, c/o OPERA, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Innovative Organic Device Laboratory, Institute of Systems, Information Technologies and Nanotechnologies (ISIT), 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Mikhnenko, Oleksandr; Nguyen, Thuc-Quyen, E-mail: quyen@chem.ucsb.edu, E-mail: adachi@cstf.kyushu-u.ac.jp [Center for Polymers and Organic Solids, University of California, Santa Barbara, California 93106-9510 (United States); Adachi, Chihaya, E-mail: quyen@chem.ucsb.edu, E-mail: adachi@cstf.kyushu-u.ac.jp [Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); JST, ERATO, Adachi Molecular Exciton Engineering Project, c/o OPERA, Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); Innovative Organic Device Laboratory, Institute of Systems, Information Technologies and Nanotechnologies (ISIT), 744 Motooka, Nishi, Fukuoka 819-0395 (Japan); International Institute for Carbon Neutral Energy Research (WPI-I2CNER), Kyushu University, 744 Motooka, Nishi, Fukuoka 819-0395 (Japan)

    2015-03-02

    Using e-beam nanolithography, the current injection/transport area in organic light-emitting diodes (OLEDs) was confined into a narrow linear structure with a minimum width of 50 nm. This caused suppression of Joule heating and partial separation of polarons and excitons, so the charge density where the electroluminescent efficiency decays to the half of the initial value (J{sub 0}) was significantly improved. A device with a narrow current injection width of 50 nm exhibited a J{sub 0} that was almost two orders of magnitude higher compared with that of the unpatterned OLED.

  12. Radiation emitting devices regulations

    International Nuclear Information System (INIS)

    1970-01-01

    The Radiation Emitting Devices Regulations are the regulations referred to in the Radiation Emitting Devices Act and relate to the operation of devices. They include standards of design and construction, standards of functioning, warning symbol specifications in addition to information relating to the seizure and detention of machines failing to comply with the regulations. The radiation emitting devices consist of the following: television receivers, extra-oral dental x-ray equipment, microwave ovens, baggage inspection x-ray devices, demonstration--type gas discharge devices, photofluorographic x-ray equipment, laser scanners, demonstration lasers, low energy electron microscopes, high intensity mercury vapour discharge lamps, sunlamps, diagnostic x-ray equipment, ultrasound therapy devices, x-ray diffraction equipment, cabinet x-ray equipment and therapeutic x-ray equipment

  13. Perovskite Materials for Light-Emitting Diodes and Lasers.

    Science.gov (United States)

    Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

    2016-08-01

    Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Salt-Doped Polymer Light-Emitting Devices

    Science.gov (United States)

    Gautier, Bathilde

    Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.

  15. Highly Efficient White Organic Light Emitting Diodes Using New Blue Fluorescence Emitter.

    Science.gov (United States)

    Kim, Seungho; Kim, Beomjin; Lee, Jaehyun; Yu, Young-Jun; Park, Jongwook

    2015-07-01

    Two different emitting compounds, 1-[1,1';3',1"]Terphenyl-5'-yl-6-(10-[1,1';3',1"]terpheny-5'-yl- anthracen-9-yl)-pyrene (TP-AP-TP) and Poly-phenylene vinylene derivative (PDY 132) were used to white OLED device. By incorporating adjacent blue and yellow emitting layers in a multi-layered structure, highly efficient white emission has been attained. The device was fabricated with a hybrid configuration structure: ITO/PEDOT (40 nm)/PDY-132 (8-50 nm)/ NPB (10 nm)/TP-AP-TP (30 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). After fixing TP-AP-TP thickness of 30 nm by evaporation, PDY-132 thickness varied with 8, 15, 35, and 50 nm by spin coating in device. The luminance efficiency of the white devices at 10 mA/cm2 were 2.93 cd/A-6.55 cd/A. One of white devices showed 6.55 cd/A and white color of (0.290, 0.331).

  16. Averaged currents induced by alpha particles in an InSb compound semiconductor detector

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Hishiki, Shigeomi; Kogetsu, Yoshitaka; Nakamura, Tatsuya; Katagiri, Masaki

    2008-01-01

    Very fast pulses due to alpha particle incidence were observed by an undoped-type InSb Schottky detector. This InSb detector was operated without applying bias voltage and its depletion layer thickness was less than the range of alpha particles. The averaged current induced by alpha particles was analyzed as a function of operating temperature and was shown to be proportional to the Hall mobility of InSb. (author)

  17. High current table-top setup for femtosecond gas electron diffraction

    Directory of Open Access Journals (Sweden)

    Omid Zandi

    2017-07-01

    Full Text Available We have constructed an experimental setup for gas phase electron diffraction with femtosecond resolution and a high average beam current. While gas electron diffraction has been successful at determining molecular structures, it has been a challenge to reach femtosecond resolution while maintaining sufficient beam current to retrieve structures with high spatial resolution. The main challenges are the Coulomb force that leads to broadening of the electron pulses and the temporal blurring that results from the velocity mismatch between the laser and electron pulses as they traverse the sample. We present here a device that uses pulse compression to overcome the Coulomb broadening and deliver femtosecond electron pulses on a gas target. The velocity mismatch can be compensated using laser pulses with a tilted intensity front to excite the sample. The temporal resolution of the setup was determined with a streak camera to be better than 400 fs for pulses with up to half a million electrons and a kinetic energy of 90 keV. The high charge per pulse, combined with a repetition rate of 5 kHz, results in an average beam current that is between one and two orders of magnitude higher than previously demonstrated.

  18. ORNL shielded facilities capable of remote handling of highly radioactive beta--gamma emitting materials

    International Nuclear Information System (INIS)

    Whitson, W.R.

    1977-09-01

    A survey of ORNL facilities having adequate shielding and containment for the remote handling of experimental quantities of highly radioactive beta-gamma emitting materials is summarized. Portions of the detailed descriptions of these facilities previously published in ORNL/TM-1268 are still valid and are repeated

  19. Contact light-emitting diodes based on vertical ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Panin, G. N. [Dongguk University, Seoul (Korea, Republic of); Russian Academy of Sciences, Chernogolovka, Moscow district (Russian Federation); Cho, H. D.; Lee, S. W.; Kang, T. W. [Dongguk University, Seoul (Korea, Republic of)

    2014-05-15

    We report vertical contact light-emitting diodes (VCLEDs), that are based on heterojunctions formed by using the point contacts of n-ZnO nanorods (NRs) to the p-type semiconductor substrate and that are fabricated using a new approach to the formation of LEDs (Appl. Phys. Lett. 98, 093110 (2011)). A p-type GaN film grown on a sapphire substrate was used to form n-ZnO NRs/pGaN VCLEDs on a large area of about 4 cm{sup 2}. The VCLEDs emitted a pure blue electroluminescence with high efficiency. Electroluminescence at 470 nm, which is visible to the naked eye, started at small current of about 50 μA and is attributed to the good optical properties of the structurally perfect heterojunctions in the point contacts. The VCLED configuration allows the creation of ZnO/p-GaN nano-LEDs of high density and high-quality with a greatly reduced concentration of nonradiative defects in the active regions. The VCLEDs showed the high brightness of light required for active matrix displays and general solid-state lighting.

  20. Dst and a map of average equivalent ring current: 1958-2007

    Science.gov (United States)

    Love, J. J.

    2008-12-01

    A new Dst index construction is made using the original hourly magnetic-observatory data collected over the years 1958-2007; stations: Hermanus South Africa, Kakioka Japan, Honolulu Hawaii, and San Juan Puerto Rico. The construction method we use is generally consistent with the algorithm defined by Sugiura (1964), and which forms the basis for the standard Kyoto Dst index. This involves corrections for observatory baseline shifts, subtraction of the main-field secular variation, and subtraction of specific harmonics that approximate the solar-quiet (Sq) variation. Fourier analysis of the observatory data reveals the nature of Sq: it consists primarily of periodic variation driven by the Earth's rotation, the Moon's orbit, the Earth's orbit, and, to some extent, the solar cycle. Cross coupling of the harmonics associated with each of the external periodic driving forces results in a seemingly complicated Sq time series that is sometimes considered to be relatively random and unpredictable, but which is, in fact, well described in terms of Fourier series. Working in the frequency domain, Sq can be filtered out, and, upon return to the time domain, the local disturbance time series (Dist) for each observatory can be recovered. After averaging the local disturbance time series from each observatory, the global magnetic disturbance time series Dst is obtained. Analysis of this new Dst index is compared with that produced by Kyoto, and various biases and differences are discussed. The combination of the Dist and Dst time series can be used to explore the local-time/universal-time symmetry of an equivalent ring current. Individual magnetic storms can have a complicated disturbance field that is asymmetrical in longitude, presumably due to partial ring currents. Using 50 years of data we map the average local-time magnetic disturbance, finding that it is very nearly proportional to Dst. To our surprise, the primary asymmetry in mean magnetic disturbance is not between

  1. High-power light-emitting diode based facility for plant cultivation

    Energy Technology Data Exchange (ETDEWEB)

    Tamulaitis, G [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Duchovskis, P [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Bliznikas, Z [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Breive, K [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Ulinskaite, R [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Brazaityte, A [Lithuanian Institute of Horticulture, Babtai, LT-54333 Kaunas District (Lithuania); Novickovas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania); Zukauskas, A [Institute of Materials Science and Applied Research, Vilnius University, Sauletekio al. 9-III, LT-10222 Vilnius (Lithuania)

    2005-09-07

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated.

  2. High-power light-emitting diode based facility for plant cultivation

    International Nuclear Information System (INIS)

    Tamulaitis, G; Duchovskis, P; Bliznikas, Z; Breive, K; Ulinskaite, R; Brazaityte, A; Novickovas, A; Zukauskas, A

    2005-01-01

    Based on perspectives of the development of semiconductor materials systems for high-power light-emitting diodes (LEDs), an illumination facility for greenhouse plant cultivation was designed with the dominating 640 nm photosynthetically active component delivered by AlGaInP LEDs and supplementary components from AlGaN (photothropic action, 455 nm) and AlGaAs (photosynthetic 660 nm and photomorphogenetic 735 nm) LEDs. Photosynthesis intensity, photosynthetic productivity and growth morphology as well as chlorophyll and phytohormone concentrations were investigated in radish and lettuce grown in phytotron chambers under the LED-based illuminators and under high-pressure sodium (HPS) lamps with an equivalent photon flux density. Advantages of the high-power LED-based illuminators over conventional HPS lamps, applicability of AlGaInP LEDs for photosynthesis and control of plant growth by circadian manipulation of a relatively weak far-red component were demonstrated

  3. In silico evaluation of highly efficient organic light-emitting materials

    Science.gov (United States)

    Kwak, H. Shaun; Giesen, David J.; Hughes, Thomas F.; Goldberg, Alexander; Cao, Yixiang; Gavartin, Jacob; Dixon, Steve; Halls, Mathew D.

    2016-09-01

    Design and development of highly efficient organic and organometallic dopants is one of the central challenges in the organic light-emitting diodes (OLEDs) technology. Recent advances in the computational materials science have made it possible to apply computer-aided evaluation and screening framework directly to the design space of organic lightemitting diodes (OLEDs). In this work, we will showcase two major components of the latest in silico framework for development of organometallic phosphorescent dopants - (1) rapid screening of dopants by machine-learned quantum mechanical models and (2) phosphorescence lifetime predictions with spin-orbit coupled calculations (SOC-TDDFT). The combined work of virtual screening and evaluation would significantly widen the design space for highly efficient phosphorescent dopants with unbiased measures to evaluate performance of the materials from first principles.

  4. Particle-in-cell simulation of electron trajectories and irradiation uniformity in an annular cathode high current pulsed electron beam source

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Wei; Wang, Langping, E-mail: aplpwang@hit.edu.cn; Zhou, Guangxue; Wang, Xiaofeng

    2017-02-01

    Highlights: • The transmission process of electrons and irradiation uniformity was simulated. • Influence of the irradiation parameters on irradiation uniformity are discussed. • High irradiation uniformity can be obtained in a wide processing window. - Abstract: In order to study electron trajectories in an annular cathode high current pulsed electron beam (HCPEB) source based on carbon fiber bunches, the transmission process of electrons emitted from the annular cathode was simulated using a particle-in-cell model with Monte Carlo collisions (PIC-MCC). The simulation results show that the intense flow of the electrons emitted from the annular cathode are expanded during the transmission process, and the uniformity of the electron distribution is improved in the transportation process. The irradiation current decreases with the irradiation distance and the pressure, and increases with the negative voltage. In addition, when the irradiation distance and the cathode voltage are larger than 40 mm and −15 kV, respectively, a uniform irradiation current distribution along the circumference of the anode can be obtained. The simulation results show that good irradiation uniformity of circular components can be achieved by this annular cathode HCPEB source.

  5. Commercial mode-locked vertical external cavity surface emitting lasers

    Science.gov (United States)

    Head, C. Robin; Paboeuf, David; Ortega, Tiago; Lubeigt, Walter; Bialkowski, Bartlomiej; Lin, Jipeng; Hempler, Nils; Maker, Gareth T.; Malcolm, Graeme P. A.

    2018-02-01

    This paper presents the latest efforts in the development of commercial optically-pumped semiconductor disk lasers (SDLs) at M Squared Lasers. Two types of SDLs are currently being developed: an ultrafast system and a continuous wave single frequency system under the names of Dragonfly and Infinite, respectively. Both offer a compact, low-cost, easy-to-use and maintenance-free tool for a range of growing markets including nonlinear microscopy and quantum technology. To facilitate consumer uptake of the SDL technology, the performance specifications aim to closely match the currently employed systems. An extended Dragonfly system is being developed targeting the nonlinear microscopy market, which typically requires 1-W average power pulse trains with pulse durations below 200 fs. The pulse repetition frequency (PRF) of the commonly used laser systems, typically Titanium-sapphire lasers, is 80 MHz. This property is particularly challenging for mode-locked SDLs which tend to operate at GHz repetition rates, due to their short upper state carrier lifetime. Dragonfly has found a compromise at 200 MHz to balance mode-locking instabilities with a low PRF. In the ongoing development of Dragonfly, additional pulse compression and nonlinear spectral broadening stages are used to obtain pulse durations as short as 130 fs with an average power of 0.85 W, approaching the required performance. A variant of the Infinite system was adapted to provide a laser source suitable for the first stage of Sr atom cooling at 461 nm. Such a source requires average powers of approximately 1 W with a sub-MHz linewidth. As direct emission in the blue is not a viable approach at this stage, an SDL emitting at 922 nm followed by an M Squared Lasers SolTiS ECD-X doubler is currently under development. The SDL oscillator delivered >1 W of single frequency (RMS frequency noise <150kHz) light at 922 nm.

  6. Application of radiofrequency superconductivity to accelerators for high-current ion beams

    International Nuclear Information System (INIS)

    Delayen, J.R.; Bohn, C.L.; Kennedy, W.L.; Roche, C.T.; Sagalovsky, L.

    1992-01-01

    A development program is underway to apply rf superconductivity to the design of continuous-wave (cw) linear accelerators for high-current, high-brightness ion beam. During the last few years, considerable progress has been made both experimentally and theoretically toward this application. Recent tests of niobium resonators for ion acceleration have yielded average accelerating gradients as high as 18 MV/m. In an experiment with a radio-frequency quadrupole geometry, niobium was found to sustain cw peak surface electric fields as high as 128 MV/m over large (10 cm) surface areas. Theoretical studies of beam halo, cumulative beam breakup and alternating-phase focusing have also yielded important results. This paper su-summarizes the recent progress and identifies current and future work in the areas of superconducting accelerator technology for high-current ion beams

  7. High average power CW FELs [Free Electron Laser] for application to plasma heating: Designs and experiments

    International Nuclear Information System (INIS)

    Booske, J.H.; Granatstein, V.L.; Radack, D.J.; Antonsen, T.M. Jr.; Bidwell, S.; Carmel, Y.; Destler, W.W.; Latham, P.E.; Levush, B.; Mayergoyz, I.D.; Zhang, Z.X.

    1989-01-01

    A short period wiggler (period ∼ 1 cm), sheet beam FEL has been proposed as a low-cost source of high average power (1 MW) millimeter-wave radiation for plasma heating and space-based radar applications. Recent calculation and experiments have confirmed the feasibility of this concept in such critical areas as rf wall heating, intercepted beam (''body'') current, and high voltage (0.5 - 1 MV) sheet beam generation and propagation. Results of preliminary low-gain sheet beam FEL oscillator experiments using a field emission diode and pulse line accelerator have verified that lasing occurs at the predicted FEL frequency. Measured start oscillation currents also appear consistent with theoretical estimates. Finally, we consider the possibilities of using a short-period, superconducting planar wiggler for improved beam confinement, as well as access to the high gain, strong pump Compton regime with its potential for highly efficient FEL operation

  8. Quantum dot superluminescent light emitting diodes: Ideal blackbody radiators?

    Energy Technology Data Exchange (ETDEWEB)

    Blazek, Martin; Elsaesser, Wolfgang [Institute of Applied Physics, Darmstadt University of Technology (Germany); Hopkinson, Mark [Dept. E and E.E, University of Sheffield (United Kingdom); Krakowski, Michel [Alcatel Thales, III-V Lab. (France)

    2008-07-01

    Quantum dot (QD) superluminescent light emitting diodes (SLEDs) provide large optical bandwidths at desired wavelengths and are therefore promising devices for incoherent light application. The intensity noise behavior of QD SLEDs is of fundamental physical interest as it provides insight into the photon emission process. We performed high precision intensity noise measurements over several decades of optical output power. For low driving currents spontaneous emission leads to Shot Noise. For high currents we find excess noise behavior with Amplified Spontaneous Emission acting as the dominant source of noise. The QD SLEDs' noise can be described as blackbody radiation noise with a limited number of optical modes. It is therefore possible to identify the SLEDs' relevant intensity noise parameters.

  9. Fabrication of White Organic Light Emitting Diode Using Two Types of Zn-Complexes as an Emitting Layer.

    Science.gov (United States)

    Kim, Dong-Eun; Kwon, Young-Soo; Shin, Hoon-Kyu

    2015-01-01

    We have studied white OLED using two types of Zn-complexes as an emitting layer. We synthesized brand new two emissive materials, Zn(HPQ)2 as a yellow emitting material and Zn(HPB)2 as a blue emitting material. The Zn-complexes are low-molecular compounds and stable thermally. The fundamental structures of the fabricated OLED was ITO/NPB (40 nm)/Zn(HPB)2 (30 nm)/Zn(HPQ)2/LiF/Al. We varied the thickness of the Zn(HPQ)2 layer by 20, 30, and 40 nm. When the thickness of the Zn(HPQ)2 layer was 20 nm, the white emission was achieved. The maximum luminance was 12,000 cd/m2 at a current density of 800 mA/cm2. The CIE coordinates of the white emission were (0.319, 0.338) at an applied voltage of 10 V.

  10. High Average Power Fiber Laser for Satellite Communications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Very high average power lasers with high electrical-top-optical (E-O) efficiency, which also support pulse position modulation (PPM) formats in the MHz-data rate...

  11. Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

    Science.gov (United States)

    Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

    2018-09-01

    In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

  12. Sub-monolayer dot vertical-cavity surface-emitting lasers

    International Nuclear Information System (INIS)

    Blokhin, S.A.; Maleev, N.A.; Kuz'menkov, A.G.

    2006-01-01

    Vertical-cavity surface-emitting lasers (VCSELs) based on submonolayer InGaAs quantum-dot active region and doped with AlGaAs/GaAs distributed Bragg reflectors were grown by molecular beam epitaxy. 3 μm aperture single-mode VCSELs demonstrate lasing at 980 nm with threshold current of 0.6 mA, maximum output power of 4 mW and external differential efficiency as high as 68%. Ultimately low internal optical losses were measured for these multimode sub-monolayer quantum dot VCSELs [ru

  13. High-power, format-flexible, 885-nm vertical-cavity surface-emitting laser arrays

    Science.gov (United States)

    Wang, Chad; Talantov, Fedor; Garrett, Henry; Berdin, Glen; Cardellino, Terri; Millenheft, David; Geske, Jonathan

    2013-03-01

    High-power, format flexible, 885 nm vertical-cavity surface-emitting laser (VCSEL) arrays have been developed for solid-state pumping and illumination applications. In this approach, a common VCSEL size format was designed to enable tiling into flexible formats and operating configurations. The fabrication of a common chip size on ceramic submount enables low-cost volume manufacturing of high-power VCSEL arrays. This base VCSEL chip was designed to be 5x3.33 mm2, and produced up to 50 Watts of peak continuous wave (CW) power. To scale to higher powers, multiple chips can be tiled into a combination of series or parallel configurations tailored to the application driver conditions. In actively cooled CW operation, the VCSEL array chips were packaged onto a single water channel cooler, and we have demonstrated 0.5x1, 1x1, and 1x3 cm2 formats, producing 150, 250, and 500 Watts of peak power, respectively, in under 130 A operating current. In QCW operation, the 1x3 cm2 VCSEL module, which contains 18 VCSEL array chips packaged on a single water cooler, produced over 1.3 kW of peak power. In passively cooled packages, multiple chip configurations have been developed for illumination applications, producing over 300 Watts of peak power in QCW operating conditions. These VCSEL chips use a substrate-removed structure to allow for efficient thermal heatsinking to enable high-power operation. This scalable, format flexible VCSEL architecture can be applied to wavelengths ranging from 800 to 1100 nm, and can be used to tailor emission spectral widths and build high-power hyperspectral sources.

  14. Printing method for organic light emitting device lighting

    Science.gov (United States)

    Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo-Gun; Kim, Tae-Un; Kim, Snag-Gi; Hong, Kyung-Jin; So, Soon-Yeol

    2013-03-01

    Organic Light Emitting Device (OLED) has a characteristic to change the electric energy into the light when the electric field is applied to the organic material. OLED is currently employed as a light source for the lighting tools because research has extensively progressed in the improvement of luminance, efficiency, and life time. OLED is widely used in the plate display device because of a simple manufacture process and high emitting efficiency. But most of OLED lighting projects were used the vacuum evaporator (thermal evaporator) with low molecular. Although printing method has lower efficiency and life time of OLED than vacuum evaporator method, projects of printing OLED actively are progressed because was possible to combine with flexible substrate and printing technology. Printing technology is ink-jet, screen printing and slot coating. This printing method allows for low cost and mass production techniques and large substrates. In this research, we have proposed inkjet printing for organic light-emitting devices has the dominant method of thick film deposition because of its low cost and simple processing. In this research, the fabrication of the passive matrix OLED is achieved by inkjet printing, using a polymer phosphorescent ink. We are measured optical and electrical characteristics of OLED.

  15. Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

    International Nuclear Information System (INIS)

    Hong, Lin-Ann; Vu, Hoang-Tuan; Juang, Fuh-Shyang; Lai, Yun-Jr; Yeh, Pei-Hsun; Tsai, Yu-Sheng

    2013-01-01

    Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm 2 , and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

  16. Effects of electron blocking and hole trapping of the red guest emitter materials on hybrid white organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hong, Lin-Ann; Vu, Hoang-Tuan [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Juang, Fuh-Shyang, E-mail: fsjuang@seed.net.tw [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Lai, Yun-Jr [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China); Yeh, Pei-Hsun [Raystar Optronics, Inc., 5F No. 25, Keya Rd. Daya Township, Taichung County, Taiwan (China); Tsai, Yu-Sheng [National Formosa University, Institute of Electro-Optical and Materials Science, Huwei, Yunlin County, Taiwan (China)

    2013-10-01

    Hybrid white organic light emitting diodes (HWOLEDs) with fluorescence and phosphorescence hybrid structures are studied in this work. HWOLEDs were fabricated with blue/red emitting layers: fluorescent host material doped with sky blue material, and bipolar phosphorescent host emitting material doped with red dopant material. An electron blocking layer is applied that provides hole red guest emitter hole trapping effects, increases the charge carrier injection quantity into the emitting layers and controls the recombination zone (RZ) that helps balance the device color. Spacer layers were also inserted to expand the RZ, increase efficiency and reduce energy quenching along with roll-off effects. The resulting high efficiency warm white OLED device has the lower highest occupied molecule orbital level red guest material, current efficiency of 15.9 cd/A at current density of 20 mA/cm{sup 2}, and Commission Internationale de L'Eclairage coordinates of (0.34, 0.39)

  17. High-efficiency pyrene-based blue light emitting diodes: Aggregation suppression using a calixarene 3D-scaffold

    KAUST Repository

    Chan, Khaileok

    2012-01-01

    An efficient blue light emitting diode based on solution processable pyrene-1,3-alt-calix[4]arene is demonstrated, providing a record current efficiency of 10.5 cd A -1 in a simple non-doped OLED configuration. Complete suppression of pyrene aggregation in the solid state is achieved by controlling chromophore dispersion using the 1,3-alt-calix[4]arene scaffold. © 2012 The Royal Society of Chemistry.

  18. High-throughput machining using a high-average power ultrashort pulse laser and high-speed polygon scanner

    Science.gov (United States)

    Schille, Joerg; Schneider, Lutz; Streek, André; Kloetzer, Sascha; Loeschner, Udo

    2016-09-01

    High-throughput ultrashort pulse laser machining is investigated on various industrial grade metals (aluminum, copper, and stainless steel) and Al2O3 ceramic at unprecedented processing speeds. This is achieved by using a high-average power picosecond laser in conjunction with a unique, in-house developed polygon mirror-based biaxial scanning system. Therefore, different concepts of polygon scanners are engineered and tested to find the best architecture for high-speed and precision laser beam scanning. In order to identify the optimum conditions for efficient processing when using high-average laser powers, the depths of cavities made in the samples by varying the processing parameter settings are analyzed and, from the results obtained, the characteristic removal values are specified. For overlapping pulses of optimum fluence, the removal rate is as high as 27.8 mm3/min for aluminum, 21.4 mm3/min for copper, 15.3 mm3/min for stainless steel, and 129.1 mm3/min for Al2O3, when a laser beam of 187 W average laser powers irradiates. On stainless steel, it is demonstrated that the removal rate increases to 23.3 mm3/min when the laser beam is very fast moving. This is thanks to the low pulse overlap as achieved with 800 m/s beam deflection speed; thus, laser beam shielding can be avoided even when irradiating high-repetitive 20-MHz pulses.

  19. Slim planar apparatus for converting LED light into collimated polarized light uniformly emitted from its top surface.

    Science.gov (United States)

    Teng, Tun-Chien; Tseng, Li-Wei

    2014-10-20

    This study proposes a slim planar apparatus for converting nonpolarized light from a light-emitting diode (LED) into an ultra-collimated linearly polarized beam uniformly emitted from its top surface. The apparatus was designed based on a folded-bilayer configuration comprising a light-mixing collimation element, polarization conversion element, and polarization-preserving light guide plate (PPLGP) with an overall thickness of 5 mm. Moreover, the apparatus can be extended transversally by connecting multiple light-mixing collimation elements and polarization conversion elements in a side-by-side configuration to share a considerably wider PPLGP, so the apparatus can have theoretically unlimited width. The simulation results indicate that the proposed apparatus is feasible for the maximal backlight modules in 39-inch liquid crystal panels. In the case of an apparatus with a 480 × 80 mm emission area and two 8-lumen LED light sources, the average head-on polarized luminance and spatial uniformity over the emission area was 5000 nit and 83%, respectively; the vertical and transverse angular distributions of the emitting light were only 5° and 10°, respectively. Moreover, the average degree of polarization and energy efficiency of the apparatus were 82% and 72%, respectively. As compared with the high-performance ultra-collimated nonpolarized backlight module proposed in our prior work, not only did the apparatus exhibit outstanding optical performance, but also the highly polarized light emissions actually increased the energy efficiency by 100%.

  20. Developing Procedures for Screening High Emitting Vehicles and Quantifying the Environmental Impacts of Grades

    OpenAIRE

    Park, Sangjun

    2005-01-01

    Since the transportation sector is highly responsible for U.S. fuel consumption and emissions, assessing the environmental impacts of transportation activities is essential for air-quality improvement programs. Also, high emitting vehicles need to be considered in the modeling of mobile-source emissions, because they contribute to a large portion of the total emissions, although they comprise a small portion of the vehicle fleet. In the context of this research, the thesis quantifies the envi...

  1. Highly stable CsPbBr3 quantum dots coated with alkyl phosphate for white light-emitting diodes.

    Science.gov (United States)

    Xuan, Tongtong; Yang, Xianfeng; Lou, Sunqi; Huang, Junjian; Liu, Yong; Yu, Jinbo; Li, Huili; Wong, Ka-Leung; Wang, Chengxin; Wang, Jing

    2017-10-19

    Inorganic halide perovskite quantum dots (QDs) suffer from problems related to poor water stability and poor thermal stability. Here we developed a simple strategy to synthesize alkyl phosphate (TDPA) coated CsPbBr 3 QDs by using 1-tetradecylphosphonic acid both as the ligand for the CsPbBr 3 QDs and as the precursor for the formation of alkyl phosphate. These QDs not only retain a high photoluminescence quantum yield (PLQY, 68%) and narrow band emission (FHWM ∼ 22 nm) but also exhibit high stability against water and heat. The relative PL intensity of the QDs was maintained at 75% or 59% after being dispersed in water for 5 h or heated to 375 K (100 °C), respectively. Finally, white light-emitting diodes (WLEDs) with a high luminous efficiency of 63 lm W -1 and a wide color gamut (122% of NTSC) were fabricated by using green-emitting CsPbBr 3 /TDPA QDs and red-emitting K 2 SiF 6 :Mn 4+ phosphors as color converters. The luminous efficiency of the WLEDs remained at 90% after working under a relative humidity (RH) of 60% for 15 h, thereby showing promise for use as backlight devices in LCDs.

  2. Recent Advances in Conjugated Polymers for Light Emitting Devices

    Science.gov (United States)

    AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  3. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

    Science.gov (United States)

    Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

    2018-04-01

    This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

  4. Light-Emitting Pickles

    Science.gov (United States)

    Vollmer, M.; Mollmann, K-P.

    2015-01-01

    We present experiments giving new insights into the classical light-emitting pickle experiment. In particular, measurements of the spectra and temperatures, as well as high-speed recordings, reveal that light emission is connected to the polarity of the electrodes and the presence of hydrogen.

  5. Highly Selective Volatile Organic Compounds Breath Analysis Using a Broadly-Tunable Vertical-External-Cavity Surface-Emitting Laser.

    Science.gov (United States)

    Tuzson, Béla; Jágerská, Jana; Looser, Herbert; Graf, Manuel; Felder, Ferdinand; Fill, Matthias; Tappy, Luc; Emmenegger, Lukas

    2017-06-20

    A broadly tunable mid-infrared vertical-external-cavity surface-emitting laser (VECSEL) is employed in a direct absorption laser spectroscopic setup to measure breath acetone. The large wavelength coverage of more than 30 cm -1 at 3.38 μm allows, in addition to acetone, the simultaneous measurement of isoprene, ethanol, methanol, methane, and water. Despite the severe spectral interferences from water and alcohols, an unambiguous determination of acetone is demonstrated with a precision of 13 ppbv that is achieved after 5 min averaging at typical breath mean acetone levels in synthetic gas samples mimicking human breath.

  6. Smart design to resolve spectral overlapping of phosphor-in-glass for high-powered remote-type white light-emitting devices.

    Science.gov (United States)

    Lee, Jin Seok; Arunkumar, P; Kim, Sunghoon; Lee, In Jae; Lee, Hyungeui; Im, Won Bin

    2014-02-15

    The white light-emitting diode (WLED) is a state-of-the-art solid state technology, which has replaced conventional lighting systems due to its reduced energy consumption, its reliability, and long life. However, the WLED presents acute challenges in device engineering, due to its lack of color purity, efficacy, and thermal stability of the lighting devices. The prime cause for inadequacies in color purity and luminous efficiency is the spectral overlapping of red components with yellow/green emissions when generating white light by pumping a blue InGaN chip with yellow YAG:Ce³⁺ phosphor, where red phosphor is included, to compensate for deficiencies in the red region. An innovative strategy was formulated to resolve this spectral overlapping by alternatively arranging phosphor-in-glass (PiG) through cutting and reassembling the commercial red CaAlSiN₃:Eu²⁺ and green Lu₃Al₅O₁₂:Ce³⁺ PiG. PiGs were fabricated using glass frits with a low softening temperature of 600°C, which exhibited excellent thermal stability and high transparency, improving life time even at an operating temperature of 200°C. This strategy overcomes the spectral overlapping issue more efficiently than the randomly mixed and patented stacking design of multiple phosphors for a remote-type WLED. The protocol for the current design of PiG possesses excellent thermal and chemical stability with high luminous efficiency and color purity is an attempt to make smarter solid state lighting for high-powered remote-type white light-emitting devices.

  7. Highly efficient red fluorescent organic light-emitting diodes by sorbitol-doped PEDOT:PSS

    Science.gov (United States)

    Zheng, Yan-Qiong; Yu, Jun-Le; Wang, Chao; Yang, Fang; Wei, Bin; Zhang, Jian-Hua; Zeng, Cheng-Hui; Yang, Yang

    2018-06-01

    This work shows a promising approach to improve device performance by optimizing the electron transport and hole injection layers for tetraphenyldibenzoperiflanthene (DBP):rubrene-based red fluorescent organic light-emitting diodes (OLEDs). We compared the effect of two electron transport layers (ETLs), and found that the rubrene/bathophenanthroline (Bphen) ETL-based OLED showed a much higher external quantum efficiency (EQE) (4.67%) than the Alq3 ETL-based OLED (EQE of 3.08%). The doping ratio of DBP in rubrene was tuned from 1.0 wt% to 4.5 wt%, and the 1.5 wt%-DBP:rubrene-based OLED demonstrated the highest EQE of 5.24% and lowest turn-on voltage of 2.2 V. Atomic force microscopy images indicated that 1.5 wt% DBP-doped rubrene film exhibited a regular strip shape, and this regular surface was favorable to the hole and electron recombination in the emitting layer. Finally, the sorbitol-doped poly(3, 4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) was used to further improve the EQE; doping with 6 wt% sorbitol achieved the highest current efficiency of 7.03 cd A‑1 and an EQE of 7.50%. The significantly enhanced performance implies that the hole injection is a limiting factor for DBP:rubrene-based red fluorescent OLEDs.

  8. Spin-polarized light-emitting diodes based on organic bipolar spin valves

    Science.gov (United States)

    Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

    2017-10-25

    Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

  9. Hybrid light emitting transistors (Presentation Recording)

    Science.gov (United States)

    Muhieddine, Khalid; Ullah, Mujeeb; Namdas, Ebinazar B.; Burn, Paul L.

    2015-10-01

    Organic light-emitting diodes (OLEDs) are well studied and established in current display applications. Light-emitting transistors (LETs) have been developed to further simplify the necessary circuitry for these applications, combining the switching capabilities of a transistor with the light emitting capabilities of an OLED. Such devices have been studied using mono- and bilayer geometries and a variety of polymers [1], small organic molecules [2] and single crystals [3] within the active layers. Current devices can often suffer from low carrier mobilities and most operate in p-type mode due to a lack of suitable n-type organic charge carrier materials. Hybrid light-emitting transistors (HLETs) are a logical step to improve device performance by harnessing the charge carrier capabilities of inorganic semiconductors [4]. We present state of the art, all solution processed hybrid light-emitting transistors using a non-planar contact geometry [1, 5]. We will discuss HLETs comprised of an inorganic electron transport layer prepared from a sol-gel of zinc tin oxide and several organic emissive materials. The mobility of the devices is found between 1-5 cm2/Vs and they had on/off ratios of ~105. Combined with optical brightness and efficiencies of the order of 103 cd/m2 and 10-3-10-1 %, respectively, these devices are moving towards the performance required for application in displays. [1] M. Ullah, K. Tandy, S. D. Yambem, M. Aljada, P. L. Burn, P. Meredith, E. B. Namdas., Adv. Mater. 2013, 25, 53, 6213 [2] R. Capelli, S. Toffanin, G. Generali, H. Usta, A. Facchetti, M. Muccini, Nature Materials 2010, 9, 496 [3] T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, Y. Iwasa, Phys. Rev. Lett. 2008, 100, 066601 [4] H. Nakanotani, M. Yahiro, C. Adachi, K. Yano, Appl. Phys. Lett. 2007, 90, 262104 [5] K. Muhieddine, M. Ullah, B. N. Pal, P. Burn E. B. Namdas, Adv. Mater. 2014, 26,37, 6410

  10. Tomographic Particle Image Velocimetry using Pulsed, High Power LED Volume Illumination

    OpenAIRE

    Buchmann, N. A.; Willert, C.; Soria, J.

    2011-01-01

    This paper investigates the use of high-power light emitting diode (LED) illumination in Particle Image Velocimetry (PIV) as an alternative to traditional laser-based illumination. The solid-state LED devices can provide averaged radiant power in excess of 10W and by operating the LEDs with short current pulses, considerably higher than in continuous operation, light pulses of sufficient energy suitable for imaging micron-sized particles can be generated. The feasibility of this LED-based ill...

  11. High concentrations of coarse particles emitted from a cattle feeding operation

    Science.gov (United States)

    Hiranuma, N.; Brooks, S. D.; Gramann, J.; Auvermann, B. W.

    2011-08-01

    Housing roughly 10 million head of cattle in the United States alone, open air cattle feedlots represent a significant but poorly constrained source of atmospheric particles. Here we present a comprehensive characterization of physical and chemical properties of particles emitted from a large representative cattle feedlot in the Southwest United States. In the summer of 2008, measurements and samplings were conducted at the upwind and downwind edges of the facility. A series of far-field measurements and samplings was also conducted 3.5 km north of the facility. Two instruments, a GRIMM Sequential Mobility Particle Sizer (SMPS) and a GRIMM Portable Aerosol Spectrometer (PAS), were used to measure particle size distributions over the range of 0.01 to 25 μm diameter. Raman microspectroscopy was used to determine the chemical composition of particles on a single particle basis. Volume size distributions of dust were dominated by coarse mode particles. Twenty-four hour averaged concentrations of PM10 (particulate matter with a diameter of 10 μm or less) were as high as 1200 μg m-3 during the campaign. The primary constituents of the particulate matter were carbonaceous materials, such as humic acid, water soluble organics, and less soluble fatty acids, including stearic acid and tristearin. A significant fraction of the organic particles was present in internal mixtures with salts. Basic characteristics such as size distribution and composition of agricultural aerosols were found to be different than the properties of those found in urban and semi-urban aerosols. Failing to account for such differences may lead to errors in estimates of aerosol effects on local air quality, visibility, and public health.

  12. Controlled light emission from white organic light-emitting devices with a single blue-emitting host and multiple fluorescent dopants

    International Nuclear Information System (INIS)

    Chin, Byung Doo; Kim, Jai Kyeong; Park, O Ok

    2007-01-01

    In this work, we fabricated white organic light-emitting devices (WOLEDs) containing a layered light-emitting region composed of a single blue-emitting host and different fluorescent dopant materials. The effects of varying the dye-doping ratio and emitting layer thickness on the efficiency, lifetime, spectral voltage-dependence and white balance were investigated for devices with a blue/orange stacked layer structure. Addition of a blue host layer doped with a green-emitting dopant, to give a blue/green/orange emitter, resulted in a broadband white spectrum without the need for a charge-blocking interlayer. The composition of blue, green and orange dopants in the host and the thickness of each emitting layer were optimized, resulting in a device efficiency of 9-11 cd A -1 even at a high brightness of 10 000 cd m -2 (achieved at a bias voltage of less than 9 V) with an emission spectrum suitable for lighting applications

  13. High current ion sources

    International Nuclear Information System (INIS)

    Brown, I.G.

    1989-06-01

    The concept of high current ion source is both relative and evolutionary. Within the domain of one particular kind of ion source technology a current of microamperers might be 'high', while in another area a current of 10 Amperes could 'low'. Even within the domain of a single ion source type, what is considered high current performance today is routinely eclipsed by better performance and higher current output within a short period of time. Within their fields of application, there is a large number of kinds of ion sources that can justifiably be called high current. Thus, as a very limited example only, PIGs, Freemen sources, ECR sources, duoplasmatrons, field emission sources, and a great many more all have their high current variants. High current ion beams of gaseous and metallic species can be generated in a number of different ways. Ion sources of the kind developed at various laboratories around the world for the production of intense neutral beams for controlled fusion experiments are used to form large area proton deuteron beams of may tens of Amperes, and this technology can be used for other applications also. There has been significant progress in recent years in the use of microwave ion sources for high current ion beam generation, and this method is likely to find wide application in various different field application. Finally, high current beams of metal ions can be produced using metal vapor vacuum arc ion source technology. After a brief consideration of high current ion source design concepts, these three particular methods are reviewed in this paper

  14. Field-emitting Townsend regime of surface dielectric barrier discharges emerging at high pressure up to supercritical conditions

    International Nuclear Information System (INIS)

    Pai, David Z; Stauss, Sven; Terashima, Kazuo

    2015-01-01

    Surface dielectric barrier discharges (DBDs) in CO 2 from atmospheric pressure up to supercritical conditions generated using 10 kHz ac excitation are investigated experimentally. Using current–voltage and charge–voltage measurements, imaging, optical emission spectroscopy, and spontaneous Raman spectroscopy, we identify and characterize a field-emitting Townsend discharge regime that emerges above 0.7 MPa. An electrical model enables the calculation of the discharge-induced capacitances of the plasma and the dielectric, as well as the space-averaged values of the surface potential and the potential drop across the discharge. The space-averaged Laplacian field is accounted for in the circuit model by including the capacitance due to the fringe electric field from the electrode edge. The electrical characteristics are demonstrated to fit the description of atmospheric-pressure Townsend DBDs (Naudé et al 2005 J. Phys. D: Appl. Phys. 38 530–8), i.e. self-sustained DBDs with minimal space-charge effects. The purely continuum emission spectrum is due to electron–neutral bremsstrahlung corresponding to an average electron temperature of 2600 K. Raman spectra of CO 2 near the critical point demonstrate that the average gas temperature increases by less than 1 K. (paper)

  15. Tetracene-based organic light-emitting transistors: optoelectronic properties and electron injection mechanism

    NARCIS (Netherlands)

    Santato, C.; Capelli, R.; Loi, M.A.; Murgia, M.; Cicoira, F.; Roy, Arunesh; Stallinga, P; Zamboni, R.; Rost, C.; Karg, S.F.; Muccini, M.

    2004-01-01

    Optoelectronic properties of light-emitting field-effect transistors (LETs) fabricated on bottom-contact transistor structures using a tetracene film as charge-transport and light-emitting material are investigated. Electroluminescence generation and transistor current are correlated, and the bias

  16. Broad-beam, high current, metal ion implantation facility

    International Nuclear Information System (INIS)

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

    1990-07-01

    We have developed a high current metal ion implantation facility with which high current beams of virtually all the solid metals of the Periodic Table can be produced. The facility makes use of a metal vapor vacuum arc ion source which is operated in a pulsed mode, with pulse width 0.25 ms and repetition rate up to 100 pps. Beam extraction voltage is up to 100 kV, corresponding to an ion energy of up to several hundred keV because of the ion charge state multiplicity; beam current is up to several Amperes peak and around 10 mA time averaged delivered onto target. Implantation is done in a broad-beam mode, with a direct line-of-sight from ion source to target. Here we describe the facility and some of the implants that have been carried out using it, including the 'seeding' of silicon wafers prior to CVD with titanium, palladium or tungsten, the formation of buried iridium silicide layers, and actinide (uranium and thorium) doping of III-V compounds. 16 refs., 6 figs

  17. Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

    International Nuclear Information System (INIS)

    Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

    2010-01-01

    This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Efficiency optimization of green phosphorescent organic light-emitting device

    Energy Technology Data Exchange (ETDEWEB)

    Park, Jung Soo; Jeon, Woo Sik; Yu, Jae Hyung [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Pode, Ramchandra, E-mail: rbpode@khu.ac.k [Department of Physics, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of); Kwon, Jang Hyuk, E-mail: jhkwon@khu.ac.k [Department of Information Display, Kyung Hee University, Dongdaemoon-gu, Seoul 130-701 (Korea, Republic of)

    2011-03-01

    Using a narrow band gap host of bis[2-(2-hydroxyphenyl)-pyridine]beryllium (Bepp{sub 2}) and green phosphorescent Ir(ppy){sub 3} [fac-tris(2-phenylpyridine) iridium III] guest concentration as low as 2%, high efficiency phosphorescent organic light-emitting diode (PHOLED) is realized. Current and power efficiencies of 62.5 cd/A (max.), 51.0 lm/W (max.), and external quantum efficiency (max.) of 19.8% are reported in this green PHOLED. A low current efficiency roll-off value of 10% over the brightness of 10,000 cd/m{sup 2} is noticed in this Bepp{sub 2} single host device. Such a high efficiency is obtained by the optimization of the doping concentration with the knowledge of the hole trapping and the emission zone situations in this host-guest system. It is suggested that the reported device performance is suitable for applications in high brightness displays and lighting.

  19. Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

    International Nuclear Information System (INIS)

    Zhao Linna; Yu Peihong; Yan Dawei; Zhou Hao; Wu Jinbo; Cui Zhiqiang; Gu Xiaofeng; Guo Zixiang; Sun Huarui

    2017-01-01

    The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reverse-bias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical “soft breakdown” behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations. (paper)

  20. Study of non inductive current generation in a plasma

    International Nuclear Information System (INIS)

    Rax, J.M.

    1987-01-01

    The problem of non-thermal bremsstrahlung during lower hybrid current drive is considered. The proposed method shows the role of the Compton effects at low frequencies and allows us to establish the link between the emitted power and the absorbed power at high frequency. The non-thermal emission is considered as a kinematical mode conversion between the absorbed radio-frequency mode and the emitted X ray photons. The fast electrons diagnostics and the ways to reach the wave structure are shown. Kinetic and electromagnetic problems concerning current generation are described. The plasma properties and diagnostics in the case of a non inductive current generation are discussed [fr

  1. High current, high bandwidth laser diode current driver

    Science.gov (United States)

    Copeland, David J.; Zimmerman, Robert K., Jr.

    1991-01-01

    A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

  2. Arbitrary helicity control of circularly polarized light from lateral-type spin-polarized light-emitting diodes at room temperature

    Science.gov (United States)

    Nishizawa, Nozomi; Aoyama, Masaki; Roca, Ronel C.; Nishibayashi, Kazuhiro; Munekata, Hiro

    2018-05-01

    We demonstrate arbitrary helicity control of circularly polarized light (CPL) emitted at room temperature from the cleaved side facet of a lateral-type spin-polarized light-emitting diode (spin-LED) with two ferromagnetic electrodes in an antiparallel magnetization configuration. Driving alternate currents through the two electrodes results in polarization switching of CPL with frequencies up to 100 kHz. Furthermore, tuning the current density ratio in the two electrodes enables manipulation of the degree of circular polarization. These results demonstrate arbitrary electrical control of polarization with high speed, which is required for the practical use of lateral-type spin-LEDs as monolithic CPL light sources.

  3. High average power solid state laser power conditioning system

    International Nuclear Information System (INIS)

    Steinkraus, R.F.

    1987-01-01

    The power conditioning system for the High Average Power Laser program at Lawrence Livermore National Laboratory (LLNL) is described. The system has been operational for two years. It is high voltage, high power, fault protected, and solid state. The power conditioning system drives flashlamps that pump solid state lasers. Flashlamps are driven by silicon control rectifier (SCR) switched, resonant charged, (LC) discharge pulse forming networks (PFNs). The system uses fiber optics for control and diagnostics. Energy and thermal diagnostics are monitored by computers

  4. Multi-solution processes of small molecule for flexible white organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tsai, Yu-Sheng, E-mail: ystsai@nfu.edu.tw [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Chittawanij, Apisit; Hong, Lin-Ann; Guo, Siou-Wei [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Wang, Ching-Chiun [Department of Solid State Lighting Technology, Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, ROC (China); Juang, Fuh-Shyang [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China); Lai, Shih-Hsiang [Department of Solid State Lighting Technology, Mechanical and Systems Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan, ROC (China); Lin, Yang-Ching [Institute of Electro-optical and Materials Science, National Formosa University, Yunlin 63201, Taiwan, ROC (China)

    2016-04-01

    Most small molecule organic light emitting diode (SM-OLED) device structures are made in one layer using solution-based processing because the solution is usually a high dissolvent material that easily attacks the layer below it. We demonstrate a simple and reliable stamping technique for fabricating multi-solution process flexible white SM-OLEDs. The structure is anode/spin-hole injection layer/spin-emitting layer/stamping-electron transport layer/cathode. Poly(di-methyl silane) (PDMS) stamp is used for transferring electron transport layer. An intermediate ultraviolet-ozone surface treatment is introduced to temporarily modify the PDMS stamp surface. Then, the solution-based electron transport layer film can therefore be uniformly formed on top of the PDMS surface. After that the electron transport layer film on the PDMS stamp is transfer-printed onto the emitting layer with suitable heating and pressing. A solution-based processing is successfully established to efficiently fabricate flexible white SM-OLEDs. The SM-OLEDs were obtained at the current density of 20 mA/cm{sup 2}, luminance of 1062 cd/m{sup 2}, current efficiency of 5.57 cd/A, and Commission internationale de l'éclairage coordinate of (0.32, 0.35). - Highlights: • All solution-processed small molecule materials (emitting layer, electron transport layer). • Poly(di-methylsilane) (PDMS) stamp is subsequently used for stamping transfer. • The flexible white SM-OLEDs are based on solution-processes with a low-cost method.

  5. Multi-solution processes of small molecule for flexible white organic light-emitting diodes

    International Nuclear Information System (INIS)

    Tsai, Yu-Sheng; Chittawanij, Apisit; Hong, Lin-Ann; Guo, Siou-Wei; Wang, Ching-Chiun; Juang, Fuh-Shyang; Lai, Shih-Hsiang; Lin, Yang-Ching

    2016-01-01

    Most small molecule organic light emitting diode (SM-OLED) device structures are made in one layer using solution-based processing because the solution is usually a high dissolvent material that easily attacks the layer below it. We demonstrate a simple and reliable stamping technique for fabricating multi-solution process flexible white SM-OLEDs. The structure is anode/spin-hole injection layer/spin-emitting layer/stamping-electron transport layer/cathode. Poly(di-methyl silane) (PDMS) stamp is used for transferring electron transport layer. An intermediate ultraviolet-ozone surface treatment is introduced to temporarily modify the PDMS stamp surface. Then, the solution-based electron transport layer film can therefore be uniformly formed on top of the PDMS surface. After that the electron transport layer film on the PDMS stamp is transfer-printed onto the emitting layer with suitable heating and pressing. A solution-based processing is successfully established to efficiently fabricate flexible white SM-OLEDs. The SM-OLEDs were obtained at the current density of 20 mA/cm"2, luminance of 1062 cd/m"2, current efficiency of 5.57 cd/A, and Commission internationale de l'éclairage coordinate of (0.32, 0.35). - Highlights: • All solution-processed small molecule materials (emitting layer, electron transport layer). • Poly(di-methylsilane) (PDMS) stamp is subsequently used for stamping transfer. • The flexible white SM-OLEDs are based on solution-processes with a low-cost method.

  6. Thermal effects in high average power optical parametric amplifiers.

    Science.gov (United States)

    Rothhardt, Jan; Demmler, Stefan; Hädrich, Steffen; Peschel, Thomas; Limpert, Jens; Tünnermann, Andreas

    2013-03-01

    Optical parametric amplifiers (OPAs) have the reputation of being average power scalable due to the instantaneous nature of the parametric process (zero quantum defect). This Letter reveals serious challenges originating from thermal load in the nonlinear crystal caused by absorption. We investigate these thermal effects in high average power OPAs based on beta barium borate. Absorption of both pump and idler waves is identified to contribute significantly to heating of the nonlinear crystal. A temperature increase of up to 148 K with respect to the environment is observed and mechanical tensile stress up to 40 MPa is found, indicating a high risk of crystal fracture under such conditions. By restricting the idler to a wavelength range far from absorption bands and removing the crystal coating we reduce the peak temperature and the resulting temperature gradient significantly. Guidelines for further power scaling of OPAs and other nonlinear devices are given.

  7. Transverse-mode-selectable microlens vertical-cavity surface-emitting laser

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Debernardi, Pierluigi; Lee, Yong Tak

    2010-01-01

    A new vertical-cavity surface-emitting laser structure employing a thin microlens is suggested and numerically investigated. The laser can be made to emit in either a high-power Gaussian-shaped single-fundamental mode or a high-power doughnut-shaped higher-order mode. The physical origin...

  8. High-average-power solid state lasers

    International Nuclear Information System (INIS)

    Summers, M.A.

    1989-01-01

    In 1987, a broad-based, aggressive R ampersand D program aimed at developing the technologies necessary to make possible the use of solid state lasers that are capable of delivering medium- to high-average power in new and demanding applications. Efforts were focused along the following major lines: development of laser and nonlinear optical materials, and of coatings for parasitic suppression and evanescent wave control; development of computational design tools; verification of computational models on thoroughly instrumented test beds; and applications of selected aspects of this technology to specific missions. In the laser materials areas, efforts were directed towards producing strong, low-loss laser glasses and large, high quality garnet crystals. The crystal program consisted of computational and experimental efforts aimed at understanding the physics, thermodynamics, and chemistry of large garnet crystal growth. The laser experimental efforts were directed at understanding thermally induced wave front aberrations in zig-zag slabs, understanding fluid mechanics, heat transfer, and optical interactions in gas-cooled slabs, and conducting critical test-bed experiments with various electro-optic switch geometries. 113 refs., 99 figs., 18 tabs

  9. Numerical study of the influence of applied voltage on the current balance factor of single layer organic light-emitting diodes

    International Nuclear Information System (INIS)

    Lu, Fei-ping; Liu, Xiao-bin; Xing, Yong-zhong

    2014-01-01

    Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier (ϕ n ) is equal to the hole injection barrier (ϕ p ) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ϕ n  > ϕ p under the condition of electron mobility (μ 0n ) > hole mobility (μ 0p ), whereas the result for the case of μ 0n   0p , is opposite. The largest CBF when μ 0n  = μ 0p can be achieved in the case of ϕ n  = ϕ p in the entire region of the applied voltage. In addition, the CBF value of the device increases with increasing applied voltage. The results obtained in this paper can present an in-depth understanding of the OLED working mechanism and help in the future fabrication of high efficiency OLEDs

  10. Light emitting diodes as a plant lighting source

    Energy Technology Data Exchange (ETDEWEB)

    Bula, R.J.; Tennessen, D.J.; Morrow, R.C. [Wisconsin Center for Space Automation and Robotics, Madison, WI (United States); Tibbitts, T.W. [Univ. of Wisconsin, Madison, WI (United States)

    1994-12-31

    Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used in a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.

  11. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

    Science.gov (United States)

    Grandusky, James R.; Chen, Jianfeng; Gibb, Shawn R.; Mendrick, Mark C.; Moe, Craig G.; Rodak, Lee; Garrett, Gregory A.; Wraback, Michael; Schowalter, Leo J.

    2013-03-01

    In this letter, the achievement of over 60 mW output power from pseudomorphic ultraviolet light-emitting diodes in continuous wave operation is reported. Die thinning and encapsulation improved the photon extraction efficiency to over 15%. Improved thermal management and a high characteristic temperature resulted in a low thermal rolloff up to 300 mA injection current with an output power of 67 mW, an external quantum efficiency (EQE) of 4.9%, and a wall plug efficiency (WPE) of 2.5% for a single-chip device emitting at 271 nm in continuous wave operation.

  12. Versatile high current metal ion implantation facility

    International Nuclear Information System (INIS)

    Brown, I.G.; Dickinson, M.R.; Galvin, J.E.; Godechot, X.; MacGill, R.A.

    1992-01-01

    A metal ion implantation facility has been developed with which high current beams of practically all the solid metals of the periodic table can be produced. A multicathode, broad-beam, metal vapor vacuum arc ion source is used to produce repetitively pulsed metal ion beams at an extraction voltage of up to 100 kV, corresponding to an ion energy of up to several hundred kiloelectronvolts because of the ion charge state multiplicity, and with a beam current of up to several amps peak pulsed and several tens of milliamps time averaged delivered onto a downstream target. Implantation is done in a broad-beam mode, with a direct line of sight from ion source to target. Here we summarize some of the features of the ion source and the implantation facility that has been built up around it. (orig)

  13. Fragranced consumer products: Chemicals emitted, ingredients unlisted

    International Nuclear Information System (INIS)

    Steinemann, Anne C.; MacGregor, Ian C.; Gordon, Sydney M.; Gallagher, Lisa G.; Davis, Amy L.; Ribeiro, Daniel S.; Wallace, Lance A.

    2011-01-01

    Fragranced consumer products are pervasive in society. Relatively little is known about the composition of these products, due to lack of prior study, complexity of formulations, and limitations and protections on ingredient disclosure in the U.S. We investigated volatile organic compounds (VOCs) emitted from 25 common fragranced consumer products-laundry products, personal care products, cleaning supplies, and air fresheners-using headspace analysis with gas chromatography/mass spectrometry (GC/MS). Our analysis found 133 different VOCs emitted from the 25 products, with an average of 17 VOCs per product. Of these 133 VOCs, 24 are classified as toxic or hazardous under U.S. federal laws, and each product emitted at least one of these compounds. For 'green' products, emissions of these compounds were not significantly different from the other products. Of all VOCs identified across the products, only 1 was listed on any product label, and only 2 were listed on any material safety data sheet (MSDS). While virtually none of the chemicals identified were listed, this nonetheless accords with U.S. regulations, which do not require disclosure of all ingredients in a consumer product, or of any ingredients in a mixture called 'fragrance.' Because the analysis focused on compounds emitted and listed, rather than exposures and effects, it makes no claims regarding possible risks from product use. Results of this study contribute to understanding emissions from common products, and their links with labeling and legislation.

  14. Carbon dioxide emitted from live stems of tropical trees is several years old.

    Science.gov (United States)

    Muhr, Jan; Angert, Alon; Negrón-Juárez, Robinson I; Muñoz, Waldemar Alegria; Kraemer, Guido; Chambers, Jeffrey Q; Trumbore, Susan E

    2013-07-01

    Storage carbon (C) pools are often assumed to contribute to respiration and growth when assimilation is insufficient to meet the current C demand. However, little is known of the age of stored C and the degree to which it supports respiration in general. We used bomb radiocarbon ((14)C) measurements to determine the mean age of carbon in CO2 emitted from and within stems of three tropical tree species in Peru. Carbon pools fixed >1 year previously contributed to stem CO2 efflux in all trees investigated, in both dry and wet seasons. The average age, i.e., the time elapsed since original fixation of CO2 from the atmosphere by the plant to its loss from the stem, ranged from 0 to 6 years. The average age of CO2 sampled 5-cm deep within the stems ranged from 2 to 6 years for two of the three species, while CO2 in the stem of the third tree species was fixed from 14 to >20 years previously. Given the consistency of (14)C values observed for individuals within each species, it is unlikely that decomposition is the source of the older CO2. Our results are in accordance with other studies that have demonstrated the contribution of storage reserves to the construction of stem wood and root respiration in temperate and boreal forests. We postulate the high (14)C values observed in stem CO2 efflux and stem-internal CO2 result from respiration of storage C pools within the tree. The observed age differences between emitted and stem-internal CO2 indicate an age gradient for sources of CO2 within the tree: CO2 produced in the outer region of the stem is younger, originating from more recent assimilates, whereas the CO2 found deeper within the stem is older, fueled by several-year-old C pools. The CO2 emitted at the stem-atmosphere interface represents a mixture of young and old CO2. These observations were independent of season, even during a time of severe regional drought. Therefore, we postulate that the use of storage C for respiration occurs on a regular basis challenging

  15. Efficient hole injection in organic light-emitting diodes using polyvinylidenefluoride as an interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Soon Ok; Soo Yook, Kyoung [Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi 448-701 (Korea, Republic of); Lee, Jun Yeob, E-mail: leej17@dankook.ac.k [Department of Polymer Science and Engineering, Dankook University, Jukjeon-dong, Suji-gu, Yongin-si, Gyeonggi 448-701 (Korea, Republic of)

    2010-10-15

    The effect of the polyvinylidenefluoride (PVDF) interlayer on the hole injection and the device performances of the green phosphorescent organic light-emitting diodes (PHOLEDs) was investigated. The hole current density of the hole only device was improved and the power efficiency of the green PHOLEDs was enhanced from 10.5 to 12.5 lm/W by the PVDF interlayer. The reduction of the interfacial energy barrier was responsible for the high hole current density in the PVDF interlayer based green PHOLEDs.

  16. Hybrid p-n junction light-emitting diodes based on sputtered ZnO and organic semiconductors

    International Nuclear Information System (INIS)

    Na, Jong H.; Kitamura, M.; Arita, M.; Arakawa, Y.

    2009-01-01

    We fabricated light-emitting hybrid p-n junction devices using low temperature deposited ZnO and organic films, in which the ZnO and the organic films served as the n- and p-type component, respectively. The devices have a rectification factor as high as ∼10 3 and a current density greater than 2 A/cm 2 . Electroluminescence of the hybrid device shows the mixture of the emission bands arising from radiative charge recombination in organic and ZnO. The substantial device properties could provide various opportunities for low cost and large area multicolor light-emitting sources.

  17. Self-sustained pulsation in the oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

    International Nuclear Information System (INIS)

    Kuzmenkov, A. G.; Ustinov, V. M.; Sokolovskii, G. S.; Maleev, N. A.; Blokhin, S. A.; Deryagin, A. G.; Chumak, S. V.; Shulenkov, A. S.; Mikhrin, S. S.; Kovsh, A. R.; McRobbie, A. D.; Sibbett, W.; Cataluna, M. A.; Rafailov, E. U.

    2007-01-01

    The authors report the observation of strong self-pulsations in molecular-beam epitaxy-grown oxide-confined vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots. At continuous-wave operation, self-pulsations with pulse durations of 100-300 ps and repetition rates of 0.2-0.6 GHz were measured. The average optical power of the pulsations was 0.5-1.0 mW at the laser continuous-wave current values of 1.5-2.5 mA

  18. [A novel yellow organic light-emitting device].

    Science.gov (United States)

    Ma, Chen; Wang, Hua; Hao, Yu-Ying; Gao, Zhi-Xiang; Zhou, He-Feng; Xu, Bing-She

    2008-07-01

    The fabrication of a novel organic yellow-light-emitting device using Rhodamine B as dopant with double quantum-well (DQW) structure was introduced in the present article. The structure and thickness of this device is ITO/CuPc (6 nm) /NPB (20 nm) /Alq3 (3 nm)/Alq3 : Rhodamine B (3 nm) /Alq3 (3 nm) /Al q3 : Rhodamine B(3 nm) /Alq3 (30 nm) /Liq (5 nm)/Al (30 nm). With the detailed investigation of electroluminescence of the novel organic yellow-light-emitting device, the authors found that the doping concentration of Rhodamine B (RhB) had a very big influence on luminance and efficiency of the organic yellow-light-emitting device. When doping concentration of Rhodamine B (RhB) was 1.5 wt%, the organic yellow-light-emitting device was obtained with the maximum current efficiency of 1.526 cd x A(-1) and the maximum luminance of 1 309 cd x m(-2). It can be seen from the EL spectra of the devices that there existed energy transferring from Alq3 to RhB in the organic light-emitting layers. When the doping concentration of RhB increased, lambda(max) of EL spectra redshifted obviously. The phenomenon was attributed to the Stokes effect of quantum wells and self-polarization of RhB dye molecules.

  19. High-energy coherent terahertz radiation emitted by wide-angle electron beams from a laser-wakefield accelerator

    Science.gov (United States)

    Yang, Xue; Brunetti, Enrico; Jaroszynski, Dino A.

    2018-04-01

    High-charge electron beams produced by laser-wakefield accelerators are potentially novel, scalable sources of high-power terahertz radiation suitable for applications requiring high-intensity fields. When an intense laser pulse propagates in underdense plasma, it can generate femtosecond duration, self-injected picocoulomb electron bunches that accelerate on-axis to energies from 10s of MeV to several GeV, depending on laser intensity and plasma density. The process leading to the formation of the accelerating structure also generates non-injected, sub-picosecond duration, 1–2 MeV nanocoulomb electron beams emitted obliquely into a hollow cone around the laser propagation axis. These wide-angle beams are stable and depend weakly on laser and plasma parameters. Here we perform simulations to characterise the coherent transition radiation emitted by these beams if passed through a thin metal foil, or directly at the plasma–vacuum interface, showing that coherent terahertz radiation with 10s μJ to mJ-level energy can be produced with an optical to terahertz conversion efficiency up to 10‑4–10‑3.

  20. A review of high beam current RFQ accelerators and funnels

    International Nuclear Information System (INIS)

    Schneider, J.D.

    1998-01-01

    The authors review the design features of several high-current (> 20-mA) and high-power (> 1-mA average) proton or H - injectors, RFQs, and funnels. They include a summary of observed performance and will mention a sampling of new designs, including the proposed incorporation of beam choppers. Different programs and organizations have chosen to build the RFQ in diverse configurations. Although the majority of RFQs are either low-current or very low duty-factor, several versions have included high-current and/or high-power designs for either protons or H - ions. The challenges of cooling, handling high space-charge forces, and coupling with injectors and subsequent accelerators are significant. In all instances, beam tests were a valuable learning experience, because not always did these as-built structures perform exactly as predicted by the earlier design codes. They summarize the key operational parameters, indicate what was achieved, and highlight what was learned in these tests. Based on this generally good performance and high promise, even more challenging designs are being considered for new applications that include even higher powers, beam funnels and choppers

  1. Cascaded Emission Regions in 2.4 μm GaInAsSb Light Emitting Diode's for Improved Current Efficiency

    Science.gov (United States)

    Prineas, John; Yager, Jeff; Olesberg, Jonathon; Cao, Chuanshun; Reddy, Madhu; Coretsopoulos, Chris

    2008-03-01

    Infrared optoelectronics play an important role in sensing of molecules through characteristic vibrational resonances that occur at those wavelengths. For molecules in aqueous and at room temperature, where optical transistions tend to be broad, the broadband emission of light emitting diodes (LEDs) are well suited for obtaining molecular absorption spectra. The 2-2.6 μm range is an advantageous range for sensing of glucose. Voltages available in batteries and control electronics are limited to much higher voltages than those required to turn on an infrared LED, and moreover have limited current supply. Here, we demonstrate room temperature operature of 5-stage cascaded emission regions in 2-2.6 μm GaInAsSb LEDs. We report three times higher turn on voltage, and nine times improved current efficiency compared to a single stage device.

  2. High Charge State Ions Extracted from Metal Plasmas in the Transition Regime from Vacuum Spark to High Current Vacuum Arc

    International Nuclear Information System (INIS)

    Yushkov, Georgy Yu.; Anders, A.

    2008-01-01

    Metal ions were extracted from pulsed discharge plasmas operating in the transition region between vacuum spark (transient high voltage of kV) and vacuum arc (arc voltage ∼ 20 V). At a peak current of about 4 kA, and with a pulse duration of 8 (micro)s, we observed mean ion charges states of about 6 for several cathode materials. In the case of platinum, the highest average charge state was 6.74 with ions of charge states as high as 10 present. For gold we found traces of charge state 11, with the highest average charge state of 7.25. At currents higher than 5 kA, non-metallic contaminations started to dominate the ion beam, preventing further enhancement of the metal charge states

  3. Analysis of the Emitted Wavelet of High-Resolution Bowtie GPR Antennas

    Directory of Open Access Journals (Sweden)

    Manuel Pereira

    2009-06-01

    Full Text Available Most Ground Penetrating Radars (GPR cover a wide frequency range by emitting very short time wavelets. In this work, we study in detail the wavelet emitted by two bowtie GPR antennas with nominal frequencies of 800 MHz and 1 GHz. Knowledge of this emitted wavelet allows us to extract as much information as possible from recorded signals, using advanced processing techniques and computer simulations. Following previously published methodology used by Rial et al. [1], which ensures system stability and reliability in data acquisition, a thorough analysis of the wavelet in both time and frequency domain is performed. Most of tests were carried out with air as propagation medium, allowing a proper analysis of the geometrical attenuation factor. Furthermore, we attempt to determine, for each antenna, a time zero in the records to allow us to correctly assign a position to the reflectors detected by the radar. Obtained results indicate that the time zero is not a constant value for the evaluated antennas, but instead depends on the characteristics of the material in contact with the antenna.

  4. High concentrations of coarse particles emitted from a cattle feeding operation

    Directory of Open Access Journals (Sweden)

    N. Hiranuma

    2011-08-01

    Full Text Available Housing roughly 10 million head of cattle in the United States alone, open air cattle feedlots represent a significant but poorly constrained source of atmospheric particles. Here we present a comprehensive characterization of physical and chemical properties of particles emitted from a large representative cattle feedlot in the Southwest United States. In the summer of 2008, measurements and samplings were conducted at the upwind and downwind edges of the facility. A series of far-field measurements and samplings was also conducted 3.5 km north of the facility. Two instruments, a GRIMM Sequential Mobility Particle Sizer (SMPS and a GRIMM Portable Aerosol Spectrometer (PAS, were used to measure particle size distributions over the range of 0.01 to 25 μm diameter. Raman microspectroscopy was used to determine the chemical composition of particles on a single particle basis. Volume size distributions of dust were dominated by coarse mode particles. Twenty-four hour averaged concentrations of PM10 (particulate matter with a diameter of 10 μm or less were as high as 1200 μg m−3 during the campaign. The primary constituents of the particulate matter were carbonaceous materials, such as humic acid, water soluble organics, and less soluble fatty acids, including stearic acid and tristearin. A significant fraction of the organic particles was present in internal mixtures with salts. Basic characteristics such as size distribution and composition of agricultural aerosols were found to be different than the properties of those found in urban and semi-urban aerosols. Failing to account for such differences may lead to errors in estimates of aerosol effects on local air quality, visibility, and public health.

  5. The thermal management of high power light emitting diodes

    Science.gov (United States)

    Hsu, Ming-Seng; Huang, Jen-Wei; Shyu, Feng-Lin

    2012-10-01

    Thermal management had an important influence not only in the life time but also in the efficiency of high power light emitting diodes (HPLEDs). 30 watts in a single package have become standard to the industrial fabricating of HPLEDs. In this study, we fabricated both of the AlN porous films, by vacuum sputtering, soldered onto the HPLEDs lamp to enhance both of the heat transfer and heat dissipation. In our model, the ceramic enables transfer the heat from electric device to the aluminum plate quickly and the porous increase the quality of the thermal dissipation between the PCB and aluminum plate, as compared to the industrial processing. The ceramic films were characterized by several subsequent analyses, especially the measurement of real work temperature. The X-Ray diffraction (XRD) diagram analysis reveals those ceramic phases were successfully grown onto the individual substrates. The morphology of ceramic films was investigated by the atomic force microscopy (AFM). The results show those porous films have high thermal conduction to the purpose. At the same time, they had transferred heat and limited work temperature, about 70°, of HPLEDs successfully.

  6. Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn; Liu, Bin; Wang, Lianhui [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Shi, Hongying [Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China); Huang, Wei, E-mail: iamdirector@njupt.edu.cn [Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Jiangsu-Singapore Joint Research Center for Organic/Bio- Electronics and Information Displays and Institute of Advanced Materials, Nanjing Tech University, Nanjing 211816 (China)

    2015-02-28

    Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

  7. Electrical current leakage and open-core threading dislocations in AlGaN-based deep ultraviolet light-emitting diodes

    International Nuclear Information System (INIS)

    Moseley, Michael; Allerman, Andrew; Crawford, Mary; Wierer, Jonathan J.; Smith, Michael; Biedermann, Laura

    2014-01-01

    Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al 0.7 Ga 0.3 N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these open-core threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al 0.7 Ga 0.3 N templates are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations

  8. Resonant cavity light-emitting diodes based on dielectric passive cavity structures

    Science.gov (United States)

    Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

    2017-02-01

    A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5

  9. Red organic light-emitting diodes based on wide band gap emitting material as the host utilizing two-step energy transfer

    International Nuclear Information System (INIS)

    Haq Khizarul; Shanpeng Liu; Khan, M A; Jiang, X Y; Zhang, Z L; Zhu, W Q

    2008-01-01

    We demonstrated efficient red organic light-emitting diodes based on a host emitting system of 9,10-di(2-naphthyl)anthracene (ADN) co-doped with 4-(dicyano-methylene)-2-t-butyle-6- (1,1,7,7-tetramethyl-julolidyl-9-enyl)-4H-pyran (DCJTB) as a red dopant and 2,3,6,7- tetrahydro-1,1,7,7-tetramethyl-1H,5H,1 1H-10(2-benzothiazolyl)-quinolizine-[9,9a,1gh] coumarin (C545T) as an assistant dopant. The typical device structure was glass substrate/ITO/4,4',4''-tris(N-3-methylphenyl-N-phenylamino) triphenylamine(m-MTDATA)/N,N'-bis-(naphthalene-1-yl)-N,N'-diphenylbenzidine (NPB)/[ADN: DCJTB: C545T/Alq 3 /LiF/Al]. It was found that C545T dopant did not emit by itself but did assist the energy transfer from the host (ADN) to the red emitting dopant. The red OLEDs realized by this approach not only enhanced the emission color, but also significantly improved the EL efficiency. The EL efficiency reached 3.5 cd A −1 at a current density of 20 mA cm −2 , which is enhanced by three times compared with devices where the emissive layer is composed of the DCJTB doped ADN. The saturated red emission was obtained with CIE coordinates (x = 0.618, y = 0.373) at 621 nm, and the device driving voltage is decreased as much as 38%. We attribute these improvements to the assistant dopant (C545T), which leads to the more efficient energy transfer from ADN to DCJTB. These results indicate that the co-doped system is a promising method for obtaining high-efficiency red OLEDs

  10. Changes in the performance characteristics of a GaAs near infrared light emitting diode when exposed to various current and thermal stresses

    Science.gov (United States)

    Thomas, E. F., Jr.

    1974-01-01

    The changes that occurred in the optical and electrical characteristics of a near infrared, GaAs light emitting diode, when operated under various levels and combinations of current and thermal stresses are discussed. A total of forty parts were operated for two thousand hours under eight different sets of dc current and ambient temperature conditions. Degradation in the radiant optical power of these devices was thirty-four percent when operated at their rated current and an ambient temperature of 298K (25 C). Derating the current and/or the thermal stress reduced the degradation of this parameter in approximately a linear manner. All degraded devices behaved similarly, exhibiting rapid nonlinear degradation followed by a gradual linear degradation and finally a period of stable operation. An attempt was made to correlate initial device condition to degradation during stress testing, but met with little success.

  11. The impact from emitted NO{sub x} and VOC in an aircraft plume. Model results for the free troposphere

    Energy Technology Data Exchange (ETDEWEB)

    Pleijel, K.

    1998-04-01

    The chemical fate of gaseous species in a specific aircraft plume is investigated using an expanding box model. The model treats the gas phase chemical reactions in detail, while other parameters are subject to a high degree of simplification. Model simulations were carried out in a plume up to an age of three days. The role of emitted VOC, NO{sub x} and CO as well as of background concentrations of VOC, NO{sub x} and ozone on aircraft plume chemistry was investigated. Background concentrations were varied in a span of measured values in the free troposphere. High background concentrations of VOC were found to double the average plume production of ozone and organic nitrates. In a high NO{sub x} environment the plume production of ozone and organic nitrates decreased by around 50%. The production of nitric acid was found to be less sensitive to background concentrations of VOC, and increased by up to 50% in a high NO{sub x} environment. Mainly, emitted NO{sub x} caused the plume production of ozone, nitric acid and organic nitrates. The ozone production during the first hours is determined by the relative amount of NO{sub 2} in the NO{sub x} emissions. The impact from emitted VOC was in relative values up to 20% of the ozone production and 65% of the production of organic nitrates. The strongest relative influence from VOC was found in an environment characterized by low VOC and high NO{sub x} background concentrations, where the absolute peak production was lower than in the other scenarios. The effect from emitting VOC and NO{sub x} at the same time added around 5% for ozone, 15% for nitric acid and 10% for organic nitrates to the plume production caused by NO{sub x} and VOC when emitted separately 47 refs, 15 figs, 4 tabs

  12. THE RELATION OF FREQUENCY TO THE PHYSIOLOGICAL EFFECTS OF ULTRA-HIGH FREQUENCY CURRENTS.

    Science.gov (United States)

    Christie, R V; Loomis, A L

    1929-01-31

    1. Biological effects of electromagnetic waves emitted by a vacuum tube oscillator have been studied at frequencis ranging from 8,300,000 to 158,000,000 cycles per second (1.9 to 38 meters wave-length). 2. The effects produced on animals can be fully explained on the basis of the heat generated by high frequency currents which are induced in them. 3. No evidence was obtained to support the theory that certain wave-lengths have a specific action on living cells. 4. At frequencies below 50,000,000 cycles, the effect of these radiations on animals is proportionate to the intensity of the electro-magnetic field. As the frequency is increased beyond this point, the amount of induced current is diminished and the apparent lethality of the radiation is decreased. This can be explained by changes occurring in the dielectric properties of tissues at low wave-lengths.

  13. Highly flexible peeled-off silver nanowire transparent anode using in organic light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Duan, Ya-Hui; Duan, Yu, E-mail: duanyu@jlu.edu.cn; Wang, Xiao; Yang, Dan; Yang, Yong-Qiang; Chen, Ping; Sun, Feng-Bo; Xue, Kai-Wen; Zhao, Yi

    2015-10-01

    Graphical abstract: - Highlights: • An ultra-smooth AgNW film on a flexible photopolymer substrate has been fabricated. • The AgNW film has a low sheet resistance with high transparency and flexibility. • OLEDs based on AgNW:NOA63 substrate can be bent at a radius of curvature of 2 mm. - Abstract: Materials to replace indium tin oxide (ITO) for high transmittance and electrical conductivity are urgently needed. In this paper, we adopted a silver nanowire (AgNW)-photopolymer (NOA63) film as a new platform for flexible optoelectronic devices. This design combined a transparent electrode and a flexible substrate. We utilized this application to obtain flexible organic light-emitting devices (FOLEDs). A peel-off process combined with a spin-coating process created an ultra-smooth silver nanowire anode on a photopolymer substrate. The performance of the device was achieved via the perfect morphology of the AgNW anode, the optimal 5 mg/ml concentration of AgNW solution, and the 45.7 Ω/□ sheet resistance of the AgNW film. The maximum current efficiency of the FOLED is 13 cd/A with stable mechanical flexibility even when bent to a radius of curvature of 2 mm. The outstanding performance of the FOLED with peeled off AgNW anode shows that this approach is a promising alternative to ITO for FOLEDs.

  14. Recent advances in light outcoupling from white organic light-emitting diodes

    Science.gov (United States)

    Gather, Malte C.; Reineke, Sebastian

    2015-01-01

    Organic light-emitting diodes (OLEDs) have been successfully introduced to the smartphone display market and have geared up to become contenders for applications in general illumination where they promise to combine efficient generation of white light with excellent color quality, glare-free illumination, and highly attractive designs. Device efficiency is the key requirement for such white OLEDs, not only from a sustainability perspective, but also because at the high brightness required for general illumination, losses lead to heating and may, thus, cause rapid device degradation. The efficiency of white OLEDs increased tremendously over the past two decades, and internal charge-to-photon conversion can now be achieved at ˜100% yield. However, the extraction of photons remains rather inefficient (typically physics of outcoupling in white OLEDs and review recent progress toward making light extraction more efficient. We describe how structures that scatter, refract, or diffract light can be attached to the outside of white OLEDs (external outcoupling) or can be integrated close to the active layers of the device (internal outcoupling). Moreover, the prospects of using top-emitting metal-metal microcavity designs for white OLEDs and of tuning the average orientation of the emissive molecules within the OLED are discussed.

  15. Cryogenic high current discharges

    International Nuclear Information System (INIS)

    Meierovich, B.E.

    1994-01-01

    Z-pinches formed from frozen deuterium fibers by a rapidly rising current have enhanced stability and high neutron yield. The efforts to understand the enhanced stability and neutron yield on the basis of classical picture of Bennett equilibrium of the current channel has not given satisfactory results. The traditional approach does not take into account the essential difference between the frozen deuterium fiber Z-pinches and the usual Z-pinches such as exploding wires or classical gas-puffed Z-pinches. The very low temperature of the fiber atoms (10 K), together with the rapidly rising current, result in the coexistence of a high current channel with unionized fiber atoms for a substantial period of time. This phenomena lasts during the risetime. This approach takes into account the difference of the breakdown in a dielectric deuterium fiber and the breakdown in a metallic wire. This difference is essential to the understanding of specific features of cryogenic high current discharges. Z-pinches in frozen deuterium fibers should be considered as a qualitatively new phenomenon on the boundary of cryogenic and high current physics. It is a start of a new branch in plasma physics: the physics of cryogenic high current discharges

  16. Overcoming the limitations of silver nanowire electrodes for light emitting applications

    Science.gov (United States)

    Chen, Dustin Yuan

    The global lighting market is projected to exceed 100 billion dollars by 2020, undergoing rapid transitions driven by technological advancements. In conjunction with increased demand for new technology, global regulations have become increasingly stringent, mandating the development and implementation of more fuel-efficient light sources. As prior generations of lighting technology such as incandescent bulbs and florescent lighting progressively become phased out, newer technologies such as light emitting diodes (LEDs) and organic light emitting diodes (OLEDs) have become progressively popular and commonplace. Though they still lag behind LEDs in terms of market penetration, OLEDs have garnered increasing amounts of attention in recent years due to unique attributes such as their exotic and large scale form factors, mechanical flexibility, and potential for high volume, low-cost manufacturing. Unfortunately, the costs for OLED manufacturing are currently still prohibitively high for several applications, with the anode and substrate representing 20-25 percent of this total cost. Significant technical and processing improvements for OLED substrates are of utmost necessity for fiscal cost reduction and commercialization of OLED technology. Silver nanowires have gained traction as a potential replacement for the current status quo, indium tin oxide (ITO) due to attributes such as flexibility, low cost processing, and high optoelectronic properties. However, due to nanoscale size effects, the integration of silver nanowires in both process flows and operational use has proven to be problematic. This work makes several key contributions towards enabling the use of silver nanowires for practical and commercial applications within the lighting industry. First, a novel method for the fabrication of a high temperature-stable, flexible substrate with surface roughness (Ra) traditional process flows, and validity for use in extreme processing conditions. Secondly, the

  17. Silicon tunnel FET with average subthreshold slope of 55 mV/dec at low drain currents

    Science.gov (United States)

    Narimani, K.; Glass, S.; Bernardy, P.; von den Driesch, N.; Zhao, Q. T.; Mantl, S.

    2018-05-01

    In this paper we present a silicon tunnel FET based on line-tunneling to achieve better subthreshold performance. The fabricated device shows an on-current of Ion = 2.55 × 10-7 A/μm at Vds = Von = Vgs - Voff = -0.5 V for an Ioff = 1 nA/μm and an average SS of 55 mV/dec over two orders of magnitude of Id. Furthermore, the analog figures of merit have been calculated and show that the transconductance efficiency gm/Id beats the MOSFET performance at low currents.

  18. Critical current measurements of high Tc superconductors in a scanning low temperature cryostat

    International Nuclear Information System (INIS)

    Telschow, K.L.; O'Brien, T.K.

    1991-01-01

    Maintaining uniformity of properties over long distances is one of the fabrication problems encountered with the new high T c superconductors. Uniform properties are crucial in long tapes or wires with high critical current since local nonuniformities can limit the current carrying capacity of the whole piece. Transport critical currents in high T c superconductors are conventionally measured with the contact 4-point probe DC current-voltage technique. This technique requires contact with the sample and and spatially averages over the region between the two voltage contacts. Two techniques have been used to infer the critical state model. The first uses the net magnetization of a suitably shaped sample in an external magnetic field. The second combines a DC magnetic field with AC induced currents to infer spatial flux profiles. The AC magnetization technique offers an advantage in that it is noncontacting; however, it also averages the measurement over a large area and requires that the sample be shaped and positioned such that it exhibits zero demagnetizing factor. This paper describes a measurement technique and a scanning cryostat assembly that are capable of determining local critical current in a tape or wire with high resolution and without any direct sample electrical contact. A small compensated coil was used to induce AC currents in slab-shaped samples. The coil was situated near the surface on one side of the slab. With this method, the AC probe can be used as a noncontacting dissipation probe, replacing the voltage probe in the 4-point contact method, when an externally driven transport current is used, or by itself as a local critical state generator and dissipation detector. The results are shown to be meaningful even when the internal magnetic field is not uniform due to shape demagnetizing effects. 10 refs., 5 figs

  19. A vacuum sealed high emission current and transmission efficiency carbon nanotube triode

    Energy Technology Data Exchange (ETDEWEB)

    Di, Yunsong [School of Electronic Science & Engineering, Southeast University, Nanjing 210096 (China); Jiangsu Key Laboratory of Optoelectronic Technology, Nanjing Normal University, Nanjing 210023 (China); Wang, Qilong; Zhang, Xiaobing, E-mail: bell@seu.edu.cn; Lei, Wei; Du, Xiaofei; Yu, Cairu [School of Electronic Science & Engineering, Southeast University, Nanjing 210096 (China)

    2016-04-15

    A vacuum sealed carbon nanotubes (CNTs) triode with a concave and spoke-shaped Mo grid is presented. Due to the high aperture ratio of the grid, the emission current could be modulated at a relatively high electric field. Totally 75 mA emission current has been obtained from the CNTs cathode with the average applied field by the grid shifting from 8 to 13 V/μm. Whilst with the electron transmission efficiency of the grid over 56%, a remarkable high modulated current electron beam over 42 mA has been collected by the anode. Also contributed by the high aperture ration of the grid, desorbed gas molecules could flow away from the emission area rapidly when the triode has been operated at a relative high emission current, and finally collected by a vacion pump. The working pressure has been maintained at ∼1 × 10{sup −7} Torr, seldom spark phenomena occurred. Nearly perfect I-V curve and corresponding Fowler-Nordheim (FN) plot confirmed the accuracy of the measured data, and the emission current was long term stable and reproducible. Thusly, this kind of triode would be used as a high-power electron source.

  20. Top-Emitting White Organic Light-Emitting Diodes Based on Cu as Both Anode and Cathode

    International Nuclear Information System (INIS)

    Mu Ye; Zhang Zhen-Song; Wang Hong-Bo; Qu Da-Long; Wu Yu-Kun; Yan Ping-Rui; Li Chuan-Nan; Zhao Yi

    2015-01-01

    It is still challenging to obtain broadband emission covering visible light spectrum as much as possible with negligible angular dependence. In this work, we demonstrate a low driving voltage top-emitting white organic light-emitting diode (TEWOLED) based on complementary blue and yellow phosphor emitters with negligible angular dependence. The bottom copper anode with medium reflectance, which is compatible with the standard complementary metal oxide semiconductor (CMOS) technology below 0.13 μm, and the semitransparent multilayer Cs2CO3/Al/Cu cathode as a top electrode, are introduced to realize high-performance TEWOLED. Our TEWOLED achieves high efficiencies of 15.4 cd/A and 12.1 lm/W at a practical brightness of 1000 cd/m 2 at low voltage of 4 V. (paper)

  1. A Novel trans-1-(9-Anthryl)-2-phenylethene Derivative Containing a Phenanthroimidazole Unit for Application in Organic Light-Emitting Diodes.

    Science.gov (United States)

    Zhou, Nonglin; Wang, Shirong; Xiao, Yin; Li, Xianggao

    2018-01-04

    Aryl-substituted phenanthroimidazoles (PIs) have attracted tremendous attention in the field of organic light-emitting diodes (OLEDs), because they are simple to synthesize and have excellent thermal properties, high photoluminescence quantum yields (PLQYs), and bipolar properties. Herein, a novel blue-green emitting material, (E)-2-{4'-[2-(anthracen-9-yl)vinyl]-[1,1'-biphenyl]-4-yl}-1-phenyl-1H-phenanthro[9,10-d]imidazole (APE-PPI), containing a t-APE [1-(9-anthryl)-2-phenylethene] core and a PI moiety was designed and synthesized. Owing to the PI skeleton, APE-PPI possesses high thermal stability and a high PLQY, and the compound exhibits bipolar transporting characteristics, which were identified by single-carrier devices. Nondoped blue-green OLEDs with APE-PPI as the emitting layer show emission at λ=508 nm, a full width at half maximum of 82 nm, a maximum brightness of 9042 cd m -2 , a maximum current efficiency of 2.14 cd A -1 , and Commission Internationale de L'Eclairage (CIE) coordinates of (0.26, 0.55). Furthermore, a white OLED (WOLED) was fabricated by employing APE-PPI as the blue-green emitting layer and 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) doped in tris-(8-hydroxyquinolinato)aluminum (Alq 3 ) as the red-green emitting layer. This WOLED exhibited a maximum brightness of 10029 cd m -2 , a maximum current efficiency of 16.05 cd A -1 , CIE coordinates of (0.47, 0.47), and a color rendering index (CRI) of 85. The high performance of APE-PPI-based devices suggests that the t-APE and PI combination can potentially be used to synthesize efficient electroluminescent materials for WOLEDs. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Electrically pumped edge-emitting photonic bandgap semiconductor laser

    Science.gov (United States)

    Lin, Shawn-Yu; Zubrzycki, Walter J.

    2004-01-06

    A highly efficient, electrically pumped edge-emitting semiconductor laser based on a one- or two-dimensional photonic bandgap (PBG) structure is described. The laser optical cavity is formed using a pair of PBG mirrors operating in the photonic band gap regime. Transverse confinement is achieved by surrounding an active semiconductor layer of high refractive index with lower-index cladding layers. The cladding layers can be electrically insulating in the passive PBG mirror and waveguide regions with a small conducting aperture for efficient channeling of the injection pump current into the active region. The active layer can comprise a quantum well structure. The quantum well structure can be relaxed in the passive regions to provide efficient extraction of laser light from the active region.

  3. Size of the virtual source behind a convex spherical surface emitting a space charge limited ion current

    International Nuclear Information System (INIS)

    Chavet, I.

    1987-01-01

    A plasma source fitted with a circular orifice and emitting a space charge limited ion current can be made to operate with a convex spherical plasma boundary (meniscus) by appropriately adjusting its extraction parameters. In this case, the diameter of the virtual source behind the meniscus is much smaller than the orifice diameter. The effective value of this virtual source diameter depends significantly on various practical factors that are more or less controllable. Its lower ideal limit, however, depends only on the radio δ of the interelectrode distance to the meniscus curvature radius and on the ratio ω of the initial to final ion energy. This ideal limit is given for the ranges 0.1 ≤ δ ≤ 10 and 10 -7 ≤ ω ≤ 10 -3 . Preliminary experimental results are reported. (orig.)

  4. Impact of optical feedback on current-induced polarization behavior of 1550 nm vertical-cavity surface-emitting lasers.

    Science.gov (United States)

    Deng, Tao; Wu, Zheng-Mao; Xie, Yi-Yuan; Wu, Jia-Gui; Tang, Xi; Fan, Li; Panajotov, Krassimir; Xia, Guang-Qiong

    2013-06-01

    Polarization switching (PS) between two orthogonal linearly polarized fundamental modes is experimentally observed in commercial free-running 1550 nm vertical-cavity surface-emitting lasers (VCSELs) (Raycan). The characteristics of this PS are strongly modified after introducing a polarization-preserved (PP) or polarization-orthogonal (PO) optical feedback. Under the case that the external cavity is approximately 30 cm, the PP optical feedback results in the PS point shifting toward a lower injection current, and the region within which the two polarization modes coexist is enlarged with the increase of the PP feedback strength. Under too-strong PP feedback levels, the PS disappears. The impact of PO optical feedback on VCSEL polarization behavior is quite similar to that of PP optical feedback, but larger feedback strength is needed to obtain similar results.

  5. Potential climate impact of black carbon emitted by rockets

    Science.gov (United States)

    Ross, Martin; Mills, Michael; Toohey, Darin

    2010-12-01

    A new type of hydrocarbon rocket engine is expected to power a fleet of suborbital rockets for commercial and scientific purposes in coming decades. A global climate model predicts that emissions from a fleet of 1000 launches per year of suborbital rockets would create a persistent layer of black carbon particles in the northern stratosphere that could cause potentially significant changes in the global atmospheric circulation and distributions of ozone and temperature. Tropical stratospheric ozone abundances are predicted to change as much as 1%, while polar ozone changes by up to 6%. Polar surface temperatures change as much as one degree K regionally with significant impacts on polar sea ice fractions. After one decade of continuous launches, globally averaged radiative forcing from the black carbon would exceed the forcing from the emitted CO2 by a factor of about 105 and would be comparable to the radiative forcing estimated from current subsonic aviation.

  6. Using rare earth doped thiosilicate phosphors in white light emitting LEDs: Towards low colour temperature and high colour rendering

    International Nuclear Information System (INIS)

    Smet, P.F.; Korthout, K.; Haecke, J.E. van; Poelman, D.

    2008-01-01

    Rare earth doped thiosilicates are promising materials for use in phosphor converted light emitting diodes (pcLEDs). These phosphors (including the hosts Ca 2 SiS 4 , BaSi 2 S 5 and Ba 2 SiS 4 in combination with Ce 3+ and/or Eu 2+ doping) cover the entire visible part of the spectrum, as the emission colour can be changed from deep blue to red. The photoluminescence emission spectrum and the overlap of the excitation spectrum with the emission of pumping LEDs is evaluated. The trade-off between high colour rendering and high electrical-to-optical power efficiency is discussed by simulation with both blue and UV emitting LEDs. Finally, a phosphor combination with low colour temperature (3000 K) and high colour rendering (CRI = 93) is proposed

  7. Numerical study of the influence of applied voltage on the current balance factor of single layer organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Fei-ping, E-mail: lufp-sysu@163.com; Liu, Xiao-bin; Xing, Yong-zhong [College of Physics and Information Science, Tianshui Normal University, Tianshui 741001 (China)

    2014-04-28

    Current balance factor (CBF) value, the ratio of the recombination current density and the total current density of a device, has an important function in fluorescence-based organic light-emitting diodes (OLEDs), as well as in the performance of the organic electrophosphorescent devices. This paper investigates the influence of the applied voltage of a device on the CBF value of single layer OLED based on the numerical model of a bipolar single layer OLED with organic layer trap free and without doping. Results show that the largest CBF value can be achieved when the electron injection barrier (ϕ{sub n}) is equal to the hole injection barrier (ϕ{sub p}) in the lower voltage region at any instance. The largest CBF in the higher voltage region can be achieved in the case of ϕ{sub n} > ϕ{sub p} under the condition of electron mobility (μ{sub 0n}) > hole mobility (μ{sub 0p}), whereas the result for the case of μ{sub 0n} < μ{sub 0p}, is opposite. The largest CBF when μ{sub 0n} = μ{sub 0p} can be achieved in the case of ϕ{sub n} = ϕ{sub p} in the entire region of the applied voltage. In addition, the CBF value of the device increases with increasing applied voltage. The results obtained in this paper can present an in-depth understanding of the OLED working mechanism and help in the future fabrication of high efficiency OLEDs.

  8. High-voltage high-current triggering vacuum switch

    International Nuclear Information System (INIS)

    Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

    2012-01-01

    Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

  9. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    Energy Technology Data Exchange (ETDEWEB)

    Lijuan Zou

    2003-08-05

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm{sup 2}, the optimal radiance R could reach 0.38 mW/cm{sup 2}, and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be {approx} 10{sup -5} cm{sup 2}/Vs and {approx} 10{sup -4} cm{sup 2}/Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces.

  10. Device Optimization and Transient Electroluminescence Studies of Organic light Emitting Devices

    International Nuclear Information System (INIS)

    Lijuan Zou

    2003-01-01

    Organic light emitting devices (OLEDs) are among the most promising for flat panel display technologies. They are light, bright, flexible, and cost effective. And while they are emerging in commercial product, their low power efficiency and long-term degradation are still challenging. The aim of this work was to investigate their device physics and improve their performance. Violet and blue OLEDs were studied. The devices were prepared by thermal vapor deposition in high vacuum. The combinatorial method was employed in device preparation. Both continuous wave and transient electroluminescence (EL) were studied. A new efficient and intense UV-violet light emitting device was developed. At a current density of 10 mA/cm 2 , the optimal radiance R could reach 0.38 mW/cm 2 , and the quantum efficiency was 1.25%. using the delayed EL technique, electron mobilities in DPVBi and CBP were determined to be ∼ 10 -5 cm 2 /Vs and ∼ 10 -4 cm 2 /Vs, respectively. Overshoot effects in the transient El of blue light emitting devices were also observed and studied. This effect was attributed to the charge accumulation at the organic/organic and organic/cathode interfaces

  11. Measurement technology of RF interference current in high current system

    Science.gov (United States)

    Zhao, Zhihua; Li, Jianxuan; Zhang, Xiangming; Zhang, Lei

    2018-06-01

    Current probe is a detection method commonly used in electromagnetic compatibility. With the development of power electronics technology, the power level of power conversion devices is constantly increasing, and the power current of the electric energy conversion device in the electromagnetic launch system can reach 10kA. Current probe conventionally used in EMC (electromagnetic compatibility) detection cannot meet the test requirements on high current system due to the magnetic saturation problem. The conventional high current sensor is also not suitable for the RF (Radio Frequency) interference current measurement in high current power device due to the high noise level in the output of active amplifier. In this paper, a passive flexible current probe based on Rogowski coil and matching resistance is proposed that can withstand high current and has low noise level, to solve the measurement problems of interference current in high current power converter. And both differential mode and common mode current detection can be easily carried out with the proposed probe because of the probe's flexible structure.

  12. Micro-light-emitting-diode array with dual functions of visible light communication and illumination

    International Nuclear Information System (INIS)

    Huang Yong; Guo Zhi-You; Sun Hui-Qing; Huang Hong-Yong

    2017-01-01

    We demonstrate high-speed blue 4 × 4 micro-light-emitting-diode (LED) arrays with 14 light-emitting units (two light-emitting units are used as the positive and negative electrodes for power supply, respectively) comprising multiple quantum wells formed of GaN epitaxial layers grown on a sapphire substrate, and experimentally test their applicability for being used as VLC transmitters and illuminations. The micro-LED arrays provide a maximum −3-dB frequency response of 60.5 MHz with a smooth frequency curve from 1 MHz to 500 MHz for an optical output power of 165 mW at an injection current of 30 mA, which, to our knowledge, is the highest response frequency ever reported for blue GaN-based LEDs operating at that level of optical output power. The relationship between the frequency and size of the device single pixel diameter reveals the relationship between the response frequency and diffusion capacitance of the device. (paper)

  13. Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2013-11-01

    We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

  14. High-Efficiency Nitride-Based Solid-State Lighting

    Energy Technology Data Exchange (ETDEWEB)

    Paul T. Fini; Shuji Nakamura

    2005-07-30

    emitting diodes, and packaging them to produce a white light fixture. During the third and final year of the project, the LRC team investigated alternate packaging methods for the white LED device to achieve at least 25 percent more luminous efficacy than traditional white LEDs; conducted optical ray-tracing analyses and human factors studies to determine the best form factor for the white light source under development, in terms of high luminous efficacy and greater acceptance by subjects; and developed a new die encapsulant using silicone-epoxy resins that showed less yellowing and slower degradation. At the conclusion of this project, the LRC demonstrated a new packaging method, called scattered photon extraction (SPE), that produced an average luminous flux and corresponding average efficacy of 90.7 lm and 36.3 lm/W, respectively, compared with 56.5 lm and 22.6 lm/W for a similar commercial white LED package. At low currents, the SPE package emitted white light with an efficacy of over 80 lm/W and had chromaticity values very close to the blackbody locus. The SPE package showed an overall improvement of 61% for this particular comparison, exceeding the LRC's third-year goal of 25% improvement.

  15. High-voltage, high-current, solid-state closing switch

    Science.gov (United States)

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  16. Research of long pulse high current diode radial insulation

    International Nuclear Information System (INIS)

    Tan Jie; Chang Anbi; Hu Kesong; Liu Qingxiang; Ma Qiaosheng; Liu Zhong

    2002-01-01

    A radial insulation structure which is used in long pulse high current diode is introduced. The theory of vacuum flashover and the idea of design are briefly introduced. In the research, cone-shaped insulator was used. The geometry structure parameters were optimized by simulating the static electrical field distribution. Experiment was done on a pulse power source with 200 ns pulse width. The maximum voltage 750 kV was obtained, and the average stand-off electrical field of insulator is about 50 kV/cm

  17. Color-converted remote phosphor prototype of a multiwavelength excitable borosilicate glass for white light-emitting diodes

    International Nuclear Information System (INIS)

    Tian Hua; Qiu Kun; Song Jun; Wang Da-Jian; Liu Ji-Wen

    2012-01-01

    We report a unique red light-emitting Eu-doped borosilicate glass to convert color for warm white light-emitting diodes. This glass can be excited from 394 nm-peaked near ultraviolet light, 466 nm-peaked blue light, to 534 nm-peaked green light to emit the desired red light with an excellent transmission in the wavelength range of 400–700 nm which makes this glass suitable for color conversion without a great cost of luminous power loss. In particular, when assembling this glass for commercial white light-emitting diodes, the tested results show that the color rendering index is improved to 84 with a loss of luminous power by 12 percent at average, making this variety of glass promising for inorganic “remote-phosphor” color conversion

  18. White organic light-emitting devices based on blue fluorescent dye combined with dual sub-monolayer

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Huishan, E-mail: yanghuishan1697@163.com

    2013-10-15

    White organic light-emitting devices have been realized by using highly blue fluorescent dye 4,4′-Bis(2,2-diphenyl-ethen-1-yl)-4,4′-di-(tert-butyl)phenyl(p-TDPVBi) and [2-methyl-6-[2-(2, 3,6,7-tetrahydro-1H, red fluorescent dye 5H-benzo[ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile(DCM2), together with well known green fluorescent dye quinacridone (QAD). The fabrication of multilayer WOLEDs did not involve the hard-to-control doping process. The structure of the device is ITO/m-MTDATA (45 nm)/NPB(8 nm)/p-TDPVBi(15 nm)/DCM2(x nm)/Alq{sub 3} (5 nm)/QAD(y nm)/Alq{sub 3}(55 nm)/LiF(1 nm)/Al, where 4,4′,4′′-tris{N,-(3-methylphenyl)-N-phenylamine}triphenylamine (m-MTDATA) acts as a hole injection layer, N,N′-bis-(1-naphthyl)-N, N′-diphenyl-1, 1′-biph-enyl-4, 4′-diamine (NPB) acts as a hole transport layer, p-TDPVBi acts as a blue emitting layer, DCM2 acts as a red emitting layer, QAD acts as a green emitting layer, tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) acts as an electron transport layer, and WOLEDs of devices A, B, C and D are different in layer thickness of DCM2 and QAD, respectively. To change the thickness of dual sub-monolayer DCM2 and QAD, the WOLEDs were obtained. When x, y=0.05, 0.1, the Commission Internationale de 1’Eclairage (CIE) coordinates of the device change from (0.4458, 0.4589) at 3 V to (0.3137, 0.3455) at 12 V that are well in the white region, and the color temperature and color rendering index were 5348 K and 85 at 8 V, respectively. Its maximum luminance was 35260 cd/m{sup 2} at 12 V, and maximum current efficiency and maximum power efficiency were 13.54 cd/A at 12 V and 6.68 lm/W at 5 V, respectively. Moreover, the current efficiency is largely insensitive to the applied voltage. The electroluminescence intensity of white EL devices varied only little at deferent dual sub-monolayer. Device D exhibited relatively high color rendering index (CRI) in the range of 88–90, which was essentially

  19. Feasibility of ultraviolet-light-emitting diodes as an alternative light source for photocatalysis.

    Science.gov (United States)

    Levine, Lanfang H; Richards, Jeffrey T; Coutts, Janelle L; Soler, Robert; Maxik, Fred; Wheeler, Raymond M

    2011-09-01

    The objective of this study was to determine whether ultraviolet-light-emitting diodes (UV-LEDs) could serve as an efficient photon source for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A (lambda max = 365 nm) LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp for a bench scale annular reactor packed with silica-titania composite (STC) pellets. Lighting and thermal properties of the module were characterized to assess its uniformity and total irradiance. A forward current (I(F)) of 100 mA delivered an average irradiance of 4.0 mW cm(-2) at a distance of 8 mm, which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED and BLB reactors were tested for the oxidization of ethanol (50 ppm(v)) in a continuous-flow-through mode with 0.94 sec residence time. At the same average irradiance, the UV-A LED reactor resulted in a lower CO2 production rate (19.8 vs. 28.6 nmol L(-1) s(-1)), lower ethanol removal (80% vs. 91%), and lower mineralization efficiency (28% vs. 44%) than the UV-A BLB reactor. Ethanol mineralization was enhanced with the increase of the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED reactor relative to the BLB reactor at the same average irradiance could be attributed to the nonuniform irradiance over the photocatalyst, that is, a portion of the catalyst was exposed to less than the average irradiance. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off" feature for periodic irradiation. Nevertheless, our results also showed that the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB, demonstrating that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

  20. RTS noise and dark current white defects reduction using selective averaging based on a multi-aperture system.

    Science.gov (United States)

    Zhang, Bo; Kagawa, Keiichiro; Takasawa, Taishi; Seo, Min Woong; Yasutomi, Keita; Kawahito, Shoji

    2014-01-16

    In extremely low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible. In this paper, a multi-aperture imaging system and selective averaging method which removes the RTS noise and the dark current white defects by minimizing the synthetic sensor noise at every pixel is proposed. In the multi-aperture imaging system, a very small synthetic F-number which is much smaller than 1.0 is achieved by increasing optical gain with multiple lenses. It is verified by simulation that the effective noise normalized by optical gain in the peak of noise histogram is reduced from 1.38e⁻ to 0.48 e⁻ in a 3 × 3-aperture system using low-noise CMOS image sensors based on folding-integration and cyclic column ADCs. In the experiment, a prototype 3 × 3-aperture camera, where each aperture has 200 × 200 pixels and an imaging lens with a focal length of 3.0 mm and F-number of 3.0, is developed. Under a low-light condition, in which the maximum average signal is 11e⁻ per aperture, the RTS and dark current white defects are removed and the peak signal-to-noise ratio (PSNR) of the image is increased by 6.3 dB.

  1. Blue phosphorescent organic light-emitting diodes using an exciplex forming co-host with the external quantum efficiency of theoretical limit.

    Science.gov (United States)

    Shin, Hyun; Lee, Sunghun; Kim, Kwon-Hyeon; Moon, Chang-Ki; Yoo, Seung-Jun; Lee, Jeong-Hwan; Kim, Jang-Joo

    2014-07-16

    A high-efficiency blue-emitting organic light-emitting diode (OLED) approaching theoretical efficiency using an exciplex-forming co-host composed of N,N'-dicarbazolyl-3,5-benzene (mCP) and bis-4,6-(3,5-di-3-pyridylphenyl)- 2-methylpyrimidine (B3PYMPM) is fabricated. Iridium(III)bis[(4,6-difluorophenyl)- pyridinato-N,C2']picolinate (FIrpic) is used as the emitter, which turns out to have a preferred horizontal dipole orientation in the emitting layer. The OLED shows a maximum external quantum efficiency of 29.5% (a maximum current efficiency of 62.2 cd A(-1) ), which is in perfect agreement with the theoretical prediction. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    Science.gov (United States)

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  3. Efficiency Drop in Green InGaN /GaN Light Emitting Diodes: The Role of Random Alloy Fluctuations

    Science.gov (United States)

    Auf der Maur, Matthias; Pecchia, Alessandro; Penazzi, Gabriele; Rodrigues, Walter; Di Carlo, Aldo

    2016-01-01

    White light emitting diodes (LEDs) based on III-nitride InGaN /GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light conversion efficiencies, it has been recently pointed out that the full potential of solid state lighting could be exploited only by color mixing approaches without employing phosphor-based wavelength conversion. Such an approach requires direct emitting LEDs of different colors, including, in particular, the green-yellow range of the visible spectrum. This range, however, suffers from a systematic drop in efficiency, known as the "green gap," whose physical origin has not been understood completely so far. In this work, we show by atomistic simulations that a consistent part of the green gap in c -plane InGaN /GaN -based light emitting diodes may be attributed to a decrease in the radiative recombination coefficient with increasing indium content due to random fluctuations of the indium concentration naturally present in any InGaN alloy.

  4. Power saving regulated light emitting diode circuit

    International Nuclear Information System (INIS)

    Haville, G. D.

    1985-01-01

    A power saving regulated light source circuit, comprising a light emitting diode (LED), a direct current source and a switching transistor connected in series with the LED, a control voltage producing resistor connected in series with the LED to produce a control voltage corresponding to the current through the LED, a storage capacitor connected in parallel with the series combination of the LED and the resistor, a comparator having its output connected to the input of the transistor, the comparator having a reference input and a control input, a stabilized biasing source for supplying a stabilized reference voltage to the reference input, the control input of the comparator being connected to the control voltage producing resistor, the comparator having a high output state when the reference voltage exceeds the control voltage while having a low output state when the control voltage exceeds the reference voltage, the transistor being conductive in response to the high state while being nonconductive in response to the low state, the transistor when conductive being effective to charge the capacitor and to increase the control voltage, whereby the comparator is cycled between the high and low output states while the transistor is cycled between conductive and nonconductive states

  5. Light emitting structures porous silicon-silicon substrate

    International Nuclear Information System (INIS)

    Monastyrskii, L.S.; Olenych, I.B.; Panasjuk, M.R.; Savchyn, V.P.

    1999-01-01

    The research of spectroscopic properties of porous silicon has been done. Complex of photoluminescence, electroluminescence, cathodoluminescence, thermostimulated depolarisation current analyte methods have been applied to study of geterostructures and free layers of porous silicon. Light emitting processes had tendency to decrease. The character of decay for all kinds of luminescence were different

  6. Confinement studies of a high current density RFP in the Extrap T1 Upgrade device

    International Nuclear Information System (INIS)

    Drake, J.R.; Brzozowski, J.H.; Brunsell, P.; Hellblom, G.; Karlsson, P.; Mazur, S.; Nordlund, P.; Welander, A.; Zastrow, K.D.

    1992-01-01

    Confinement studies have been carried out on the Extrap T1 device operated in the reversed field pinch (RFP) mode. Extrap T1 is a small device with a major radius of R=0.5 m and a high aspect ratio, R/a=8.9. For these experiments, the device has been operated with a resistive shell with measured, toroidally-averaged flux penetration times of τ sv = 500μs (vertical) and τ sR =300μs (radial). The pulse lengths are about 600 μs, which is slightly longer than the shell penetration time. The purpose of these experiments is to study energy confinement in a high aspect-ratio, high current-density RFP device with a resistive shell. The device can be operated with high current densities which exceed 20 MAm -2 on axis. For these discharges, the average electron density is relatively high, ≅ 1x10 20 m -3 . Therefore, although the average current density exceeds 5 MAm -2 , the important parameter / ≅ I/N is maintained less than 1x10 -13 Am, where N is the line density. The plasma diagnostics for the device include a single chord CO 2 laser interferometer ( ), single point Thomson scattering (T e , n o ), VUV and visible spectroscopy (T e , Z eff ) surface barrier diodes for soft X-ray measurements (T e ), bolometry (P rad ), surface probes (Γ p ,T i ) and comprehensive magnetic diagnostics for both equilibrium and magnetic fluctuation studies. (author) 5 refs., 1 fig., 1 tab

  7. Industrial Applications of High Average Power FELS

    CERN Document Server

    Shinn, Michelle D

    2005-01-01

    The use of lasers for material processing continues to expand, and the annual sales of such lasers exceeds $1 B (US). Large scale (many m2) processing of materials require the economical production of laser powers of the tens of kilowatts, and therefore are not yet commercial processes, although they have been demonstrated. The development of FELs based on superconducting RF (SRF) linac technology provides a scaleable path to laser outputs above 50 kW in the IR, rendering these applications economically viable, since the cost/photon drops as the output power increases. This approach also enables high average power ~ 1 kW output in the UV spectrum. Such FELs will provide quasi-cw (PRFs in the tens of MHz), of ultrafast (pulsewidth ~ 1 ps) output with very high beam quality. This talk will provide an overview of applications tests by our facility's users such as pulsed laser deposition, laser ablation, and laser surface modification, as well as present plans that will be tested with our upgraded FELs. These upg...

  8. Development of linear proton accelerators with the high average beam power

    CERN Document Server

    Bomko, V A; Egorov, A M

    2001-01-01

    Review of the current situation in the development of powerful linear proton accelerators carried out in many countries is given. The purpose of their creation is solving problems of safe and efficient nuclear energetics on a basis of the accelerator-reactor complex. In this case a proton beam with the energy up to 1 GeV, the average current of 30 mA is required. At the same time there is a needed in more powerful beams,for example, for production of tritium and transmutation of nuclear waste products. The creation of accelerators of such a power will be followed by the construction of linear accelerators of 1 GeV but with a more moderate beam current. They are intended for investigation of many aspects of neutron physics and neutron engineering. Problems in the creation of efficient constructions for the basic and auxiliary equipment, the reliability of the systems, and minimization of the beam losses in the process of acceleration will be solved.

  9. High-efficiency green phosphorescent organic light-emitting diodes with double-emission layer and thick N-doped electron transport layer

    Energy Technology Data Exchange (ETDEWEB)

    Nobuki, Shunichiro, E-mail: shunichiro.nobuki.nb@hitachi.com [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Wakana, Hironori; Ishihara, Shingo [Hitachi Research Laboratory, Hitachi Ltd., 7-1-1 Omika-cho, Hitachi-city, Ibaraki 319-1292 (Japan); Mikami, Akiyoshi [Dept. of Electrical Engineering, Kanazawa Institute of Technology, 7-1 Ohgigaoka, Nonoichimachi, Ishikawa 921-8501 (Japan)

    2014-03-03

    We have developed green phosphorescent organic light-emitting diodes (OLEDs) with high external quantum efficiency of 59.7% and power efficiency of 243 lm/W at 2.73 V at 0.053 mA/cm{sup 2}. A double emission layer and a thick n-doped electron transport layer were adopted to improve the exciton recombination factor. A high refractive index hemispherical lens was attached to a high refractive index substrate for extracting light trapped inside the substrate and the multiple-layers of OLEDs to air. Additionally, we analyzed an energy loss mechanism to clarify room for the improvement of our OLEDs including the charge balance factor. - Highlights: • We developed high efficiency green phosphorescent organic light-emitting diode (OLED). • Our OLED had external quantum efficiency of 59.7% and power efficiency of 243 lm/W. • A double emission layer and thick n-doped electron transport layer were adopted. • High refractive index media (hemispherical lens and substrate) were also used. • We analyzed an energy loss mechanism to clarify the charge balance factor of our OLED.

  10. High-throughput machining using high average power ultrashort pulse lasers and ultrafast polygon scanner

    Science.gov (United States)

    Schille, Joerg; Schneider, Lutz; Streek, André; Kloetzer, Sascha; Loeschner, Udo

    2016-03-01

    In this paper, high-throughput ultrashort pulse laser machining is investigated on various industrial grade metals (Aluminium, Copper, Stainless steel) and Al2O3 ceramic at unprecedented processing speeds. This is achieved by using a high pulse repetition frequency picosecond laser with maximum average output power of 270 W in conjunction with a unique, in-house developed two-axis polygon scanner. Initially, different concepts of polygon scanners are engineered and tested to find out the optimal architecture for ultrafast and precision laser beam scanning. Remarkable 1,000 m/s scan speed is achieved on the substrate, and thanks to the resulting low pulse overlap, thermal accumulation and plasma absorption effects are avoided at up to 20 MHz pulse repetition frequencies. In order to identify optimum processing conditions for efficient high-average power laser machining, the depths of cavities produced under varied parameter settings are analyzed and, from the results obtained, the characteristic removal values are specified. The maximum removal rate is achieved as high as 27.8 mm3/min for Aluminium, 21.4 mm3/min for Copper, 15.3 mm3/min for Stainless steel and 129.1 mm3/min for Al2O3 when full available laser power is irradiated at optimum pulse repetition frequency.

  11. High-Efficiency Nitride-Based Solid-State Lighting. Final Technical Progress Report

    International Nuclear Information System (INIS)

    Paul T. Fini; Shuji Nakamura

    2005-01-01

    fixture. During the third and final year of the project, the LRC team investigated alternate packaging methods for the white LED device to achieve at least 25 percent more luminous efficacy than traditional white LEDs; conducted optical ray-tracing analyses and human factors studies to determine the best form factor for the white light source under development, in terms of high luminous efficacy and greater acceptance by subjects; and developed a new die encapsulant using silicone-epoxy resins that showed less yellowing and slower degradation. At the conclusion of this project, the LRC demonstrated a new packaging method, called scattered photon extraction (SPE), that produced an average luminous flux and corresponding average efficacy of 90.7 lm and 36.3 lm/W, respectively, compared with 56.5 lm and 22.6 lm/W for a similar commercial white LED package. At low currents, the SPE package emitted white light with an efficacy of over 80 lm/W and had chromaticity values very close to the blackbody locus. The SPE package showed an overall improvement of 61% for this particular comparison, exceeding the LRC's third-year goal of 25% improvement

  12. High-Average-Power Diffraction Pulse-Compression Gratings Enabling Next-Generation Ultrafast Laser Systems

    Energy Technology Data Exchange (ETDEWEB)

    Alessi, D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2016-11-01

    Pulse compressors for ultrafast lasers have been identified as a technology gap in the push towards high peak power systems with high average powers for industrial and scientific applications. Gratings for ultrashort (sub-150fs) pulse compressors are metallic and can absorb a significant percentage of laser energy resulting in up to 40% loss as well as thermal issues which degrade on-target performance. We have developed a next generation gold grating technology which we have scaled to the petawatt-size. This resulted in improvements in efficiency, uniformity and processing as compared to previous substrate etched gratings for high average power. This new design has a deposited dielectric material for the grating ridge rather than etching directly into the glass substrate. It has been observed that average powers as low as 1W in a compressor can cause distortions in the on-target beam. We have developed and tested a method of actively cooling diffraction gratings which, in the case of gold gratings, can support a petawatt peak power laser with up to 600W average power. We demonstrated thermo-mechanical modeling of a grating in its use environment and benchmarked with experimental measurement. Multilayer dielectric (MLD) gratings are not yet used for these high peak power, ultrashort pulse durations due to their design challenges. We have designed and fabricated broad bandwidth, low dispersion MLD gratings suitable for delivering 30 fs pulses at high average power. This new grating design requires the use of a novel Out Of Plane (OOP) compressor, which we have modeled, designed, built and tested. This prototype compressor yielded a transmission of 90% for a pulse with 45 nm bandwidth, and free of spatial and angular chirp. In order to evaluate gratings and compressors built in this project we have commissioned a joule-class ultrafast Ti:Sapphire laser system. Combining the grating cooling and MLD technologies developed here could enable petawatt laser systems to

  13. Improved High Current Liquid and Gas Targets for Cyclotron Produced Radioisotopes (Turkey)

    Energy Technology Data Exchange (ETDEWEB)

    Kivrakdal, Deniz; Ustaoğlu, Özgur; Soylu, Ayfer [Eczacibasi Nuclear Products Inc. (Turkey)

    2009-07-01

    As positron emitting radiopharmaceuticals gain interest in nuclear medicine, more and more baby cyclotrons are installed. The number of cyclotrons in Turkey went up to nine whereas the number of PET or PET/CT cameras increased more than 50% within a year. At the moment there are 65 positron imaging cameras serving a population of around 70 million. Eczacıbası - Monrol Nuclear Products Industry and Trade Inc. has five cyclotrons three of them being of different brands. In this report production data collected with these cyclotrons using high current liquid targets of silver, tantalum and niobium will be presented. The data presented here covers the whole duration of the project. Another topic which will be discussed here is the work carried out about purification and analysis of used O-18 water for re-use purposes. (author)

  14. Improved High Current Liquid and Gas Targets for Cyclotron Produced Radioisotopes (Turkey)

    International Nuclear Information System (INIS)

    Kivrakdal, Deniz; Ustaoğlu, Özgur; Soylu, Ayfer

    2009-01-01

    As positron emitting radiopharmaceuticals gain interest in nuclear medicine, more and more baby cyclotrons are installed. The number of cyclotrons in Turkey went up to nine whereas the number of PET or PET/CT cameras increased more than 50% within a year. At the moment there are 65 positron imaging cameras serving a population of around 70 million. Eczacıbası - Monrol Nuclear Products Industry and Trade Inc. has five cyclotrons three of them being of different brands. In this report production data collected with these cyclotrons using high current liquid targets of silver, tantalum and niobium will be presented. The data presented here covers the whole duration of the project. Another topic which will be discussed here is the work carried out about purification and analysis of used O-18 water for re-use purposes. (author)

  15. Analysis of the current-voltage characteristics of polymer-based organic light-emitting diodes (OLEDs deposited by spin coating

    Directory of Open Access Journals (Sweden)

    Ricardo Vera

    2010-04-01

    Full Text Available Polymer-based organic light-emitting diodes (OLEDs with the structure ITO / PEDOT:PSS / MDMO-PPV / Metal were prepared by spincoating. It is known that electroluminescence of these devices is strongly dependent on the material used as cathode and on the depositionparameters of the polymer electroluminescent layer MDMO-PPV. Objective. In this work the effect of i the frequency of the spin coater(1000-8000 rpm, ii the concentration of the MDMO-PPV: Toluene solution, and iii the material used as cathode (Aluminium or Silveron the electrical response of the devices, was evaluated through current-voltage (I-V measurements. Materials and methods. PEDOT:PPSand MDMO-PPV organic layers were deposited by spin coating on ITO substrates, and the OLED structure was completed with cathodesof aluminium and silver. The electric response of the devices was evaluated based on the I-V characteristics. Results. Diodes prepared withthinner organic films allow higher currents at lower voltages; this can be achieved either by increasing the frequency of the spin coater orby using concentrations of MDMO-PPV: Toluene lower than 2% weight. A fit of the experimental data showed that the diodes have twocontributions to the current. The first one is attributed to parasitic currents between anode and cathode, and the other one is a parallel currentthrough the organic layer, in which the carrier injection mechanism is mediated by thermionic emission. Conclusions. The results of thefitting and the energy level alignment through the whole structure show that PPV-based OLEDs are unipolar devices, with current mainlyattributed to hole transport.

  16. Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications

    KAUST Repository

    Janjua, Bilal

    2016-08-10

    Group-III-nitride laser diode (LD)-based solid-state lighting device has been demonstrated to be droop-free compared to light-emitting diodes (LEDs), and highly energy-efficient compared to that of the traditional incandescent and fluorescent white light systems. The YAG:Ce3+ phosphor used in LD-based solid-state lighting, however, is associated with rapid degradation issue. An alternate phosphor/LD architecture, which is capable of sustaining high temperature, high power density, while still intensity- and bandwidth-tunable for high color-quality remained unexplored. In this paper, we present for the first time, the proof-of-concept of the generation of high-quality white light using an InGaN-based orange nanowires (NWs) LED grown on silicon, in conjunction with a blue LD, and in place of the compound-phosphor. By changing the relative intensities of the ultrabroad linewidth orange and narrow-linewidth blue components, our LED/LD device architecture achieved correlated color temperature (CCT) ranging from 3000 K to above 6000K with color rendering index (CRI) values reaching 83.1, a value unsurpassed by the YAG-phosphor/blue-LD counterpart. The white-light wireless communications was implemented using the blue LD through on-off keying (OOK) modulation to obtain a data rate of 1.06 Gbps. We therefore achieved the best of both worlds when orange-emitting NWs LED are utilized as “active-phosphor”, while blue LD is used for both color mixing and optical wireless communications.

  17. High PRF high current switch

    Science.gov (United States)

    Moran, Stuart L.; Hutcherson, R. Kenneth

    1990-03-27

    A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

  18. Slanted n-ZnO/p-GaN nanorod arrays light-emitting diodes grown by oblique-angle deposition

    Directory of Open Access Journals (Sweden)

    Ya-Ju Lee

    2014-05-01

    Full Text Available High-efficient ZnO-based nanorod array light-emitting diodes (LEDs were grown by an oblique-angle deposition scheme. Due to the shadowing effect, the inclined ZnO vapor-flow was selectively deposited on the tip surfaces of pre-fabricated p-GaN nanorod arrays, resulting in the formation of nanosized heterojunctions. The LED architecture composed of the slanted n-ZnO film on p-GaN nanorod arrays exhibits a well-behaving current rectification of junction diode with low turn-on voltage of 4.7 V, and stably emits bluish-white luminescence with dominant peak of 390 nm under the operation of forward injection currents. In general, as the device fabrication does not involve passivation of using a polymer or sophisticated material growth techniques, the revealed scheme might be readily applied on other kinds of nanoscale optoelectronic devices.

  19. High efficient white organic light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Seidel, Stefan; Krause, Ralf [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Kozlowski, Fryderyk; Schmid, Guenter; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Winnacker, Albrecht [Department of Materials Science VI, University of Erlangen-Nuremberg (Germany)

    2007-07-01

    Due to the rapid progress in the last years the performance of organic light emitting diodes (OLEDs) has reached a level where general lighting presents a most interesting application target. We demonstrate, how the color coordinates of the emission spectrum can be adjusted using a combinatorial evaporation tool to lie on the desired black body curve representing cold and warm white, respectively. The evaluation includes phosphorescent and fluorescent dye approaches to optimize lifetime and efficiency, simultaneously. Detailed results are presented with respect to variation of layer thicknesses and dopant concentrations of each layer within the OLED stack. The most promising approach contains phosphorescent red and green dyes combined with a fluorescent blue one as blue phosphorescent dopants are not yet stable enough to achieve long lifetimes.

  20. Degradation of light emitting diodes: a proposed methodology

    International Nuclear Information System (INIS)

    Koh, Sau; Vam Driel, Willem; Zhang, G.Q.

    2011-01-01

    Due to their long lifetime and high efficacy, light emitting diodes have the potential to revolutionize the illumination industry. However, self heat and high environmental temperature which will lead to increased junction temperature and degradation due to electrical overstress can shorten the life of the light emitting diode. In this research, a methodology to investigate the degradation of the LED emitter has been proposed. The epoxy lens of the emitter can be modelled using simplified Eyring methods whereas an equation has been proposed for describing the degradation of the LED emitters. (semiconductor devices)

  1. Determination on the Coefficient of Thermal Expansion in High-Power InGaN-based Light-emitting Diodes by Optical Coherence Tomography.

    Science.gov (United States)

    Lee, Ya-Ju; Chou, Chun-Yang; Huang, Chun-Ying; Yao, Yung-Chi; Haung, Yi-Kai; Tsai, Meng-Tsan

    2017-10-31

    The coefficient of thermal expansion (CTE) is a physical quantity that indicates the thermal expansion value of a material upon heating. For advanced thermal management, the accurate and immediate determination of the CTE of packaging materials is gaining importance because the demand for high-power lighting-emitting diodes (LEDs) is currently increasing. In this study, we used optical coherence tomography (OCT) to measure the CTE of an InGaN-based (λ = 450 nm) high-power LED encapsulated in polystyrene resin. The distances between individual interfaces of the OCT images were observed and recorded to derive the instantaneous CTE of the packaged LED under different injected currents. The LED junction temperature at different injected currents was established with the forward voltage method. Accordingly, the measured instantaneous CTE of polystyrene resin varied from 5.86 × 10 -5  °C -1 to 14.10 × 10 -5  °C -1 in the junction temperature range 25-225 °C and exhibited a uniform distribution in an OCT scanning area of 200 × 200 μm. Most importantly, this work validates the hypothesis that OCT can provide an alternative way to directly and nondestructively determine the spatially resolved CTE of the packaged LED device, which offers significant advantages over traditional CTE measurement techniques.

  2. Low driving voltage blue, green, yellow, red and white organic light-emitting diodes with a simply double light-emitting structure.

    Science.gov (United States)

    Zhang, Zhensong; Yue, Shouzhen; Wu, Yukun; Yan, Pingrui; Wu, Qingyang; Qu, Dalong; Liu, Shiyong; Zhao, Yi

    2014-01-27

    Low driving voltage blue, green, yellow, red and white phosphorescent organic light-emitting diodes (OLEDs) with a common simply double emitting layer (D-EML) structure are investigated. Our OLEDs without any out-coupling schemes as well as n-doping strategies show low driving voltage, e.g. white OLED, respectively. This work demonstrates that the low driving voltages and high efficiencies can be simultaneously realized with a common simply D-EML structure.

  3. Organic light-emitting diodes for lighting: High color quality by controlling energy transfer processes in host-guest-systems

    Science.gov (United States)

    Weichsel, Caroline; Reineke, Sebastian; Furno, Mauro; Lüssem, Björn; Leo, Karl

    2012-02-01

    Exciton generation and transfer processes in a multilayer organic light-emitting diode (OLED) are studied in order to realize OLEDs with warm white color coordinates and high color-rendering index (CRI). We investigate a host-guest-system containing four phosphorescent emitters and two matrix materials with different transport properties. We show, by time-resolved spectroscopy, that an energy back-transfer from the blue emitter to the matrix materials occurs, which can be used to transport excitons to the other emitter molecules. Furthermore, we investigate the excitonic and electronic transfer processes by designing suitable emission layer stacks. As a result, we obtain an OLED with Commission Internationale de lÉclairage (CIE) coordinates of (0.444;0.409), a CRI of 82, and a spectrum independent of the applied current. The OLED shows an external quantum efficiency of 10% and a luminous efficacy of 17.4 lm/W at 1000 cd/m2.

  4. Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Kageyama, Takeo; Miyamoto, Tomoyuki; Ohta, Masataka; Matsuura, Tetsuya; Matsui, Yasutaka; Furuhata, Tatsuya; Koyama, Fumio

    2004-01-01

    A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) was observed by adding the dilute Sb. The QWs showed an increased PL intensity and narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force microscope study showed a flattened surface morphology by the introduction of the Sb. Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm showed a low threshold current density of 125 A/cm 2 per well for an infinite cavity length

  5. High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

    Science.gov (United States)

    Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

    2013-03-01

    This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

  6. Efficient white organic light emitting devices with dual emitting layers

    International Nuclear Information System (INIS)

    Wu Yaoshan; Hwang Shiaowen; Chen Hsianhung; Lee Mengting; Shen Wenjian; Chen, C.H.

    2005-01-01

    In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF x / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm 2 , but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm 2 due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm 2

  7. Fast Postmoisture Treatment of Luminescent Perovskite Films for Efficient Light-Emitting Diodes.

    Science.gov (United States)

    Wang, Haoran; Li, Xiaomin; Yuan, Mingjian; Yang, Xuyong

    2018-04-01

    Despite the recent advances in the performance of perovskite light-emitting diodes (PeLEDs), the effects of water on the perovskite emissive layer and its electroluminescence are still unclear, even though it has been previously demonstrated that moisture has a significant impact on the quality of perovskite films in the fabrication process of perovskite solar cells and is a prerequisite for obtaining high-performance PeLEDs. Here, the effects of postmoisture on the luminescent CH 3 NH 3 PbBr 3 (MAPbBr 3 ) perovskite films are systematically investigated. It is found that postmoisture treatment can efficiently control the morphology and growth of perovskite films and only a fast moisture exposure at a 60% high relative humidity results in significantly improved crystallinity, carrier lifetime, and photoluminescence quantum yield of perovskite films. With the optimized moisture-treated perovskite films, a high-performance PeLED is fabricated, exhibiting a maximum current efficiency of 20.4 cd A -1 , which is an almost 20-fold enhancement when compared with perovskite films without moisture treatment. The results provide valuable insights into the moisture-assisted growth of luminescent perovskite films and will aid in the development of high-performance perovskite light-emitting devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. [Effects of white organic light-emitting devices using color conversion films on electroluminescence spectra].

    Science.gov (United States)

    Hou, Qing-Chuan; Wu, Xiao-Ming; Hua, Yu-Lin; Qi, Qing-Jin; Li, Lan; Yin, Shou-Gen

    2010-06-01

    The authors report a novel white organic light-emitting device (WOLED), which uses a strategy of exciting organic/ inorganic color conversion film with a blue organic light-emitting diode (OLED). The luminescent layer of the blue OLED was prepared by use of CBP host blended with a blue highly fluorescent dye N-BDAVBi. The organic/inorganic color conversion film was prepared by dispersing a mixture of red pigment VQ-D25 and YAG : Ce3+ phosphor in PMMA. The authors have achieved a novel WOLED with the high color stability by optimizing the thickness and fluorescent pigment concentration of the color conversion film. When the driving voltage varied between 6 and 14 V, the color coordinates (CIE) varied slightly from (0.354, 0.304) to (0.357, 0.312) and the maximum current efficiency is about 5.8 cd x A(-1) (4.35 mA x cm(-2)), the maximum brightness is 16 800 cd x m(-2) at the operating voltage of 14 V.

  9. Investigations of thin p-GaN light-emitting diodes with surface plasmon compatible metallization

    DEFF Research Database (Denmark)

    Fadil, Ahmed; Ou, Yiyu; Iida, Daisuke

    2016-01-01

    We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement.......We investigate device performance of InGaN light-emitting diodes with a 30-nm p-GaN layer. The metallization used to separate the p-contact from plasmonic metals, reveals limitations on current spreading which reduces surface plasmonic enhancement....

  10. Blue Light Emitting Polyphenylene Dendrimers with Bipolar Charge Transport Moieties

    Directory of Open Access Journals (Sweden)

    Guang Zhang

    2016-10-01

    Full Text Available Two light-emitting polyphenylene dendrimers with both hole and electron transporting moieties were synthesized and characterized. Both molecules exhibited pure blue emission solely from the pyrene core and efficient surface-to-core energy transfers when characterized in a nonpolar environment. In particular, the carbazole- and oxadiazole-functionalized dendrimer (D1 manifested a pure blue emission from the pyrene core without showing intramolecular charge transfer (ICT in environments with increasing polarity. On the other hand, the triphenylamine- and oxadiazole-functionalized one (D2 displayed notable ICT with dual emission from both the core and an ICT state in highly polar solvents. D1, in a three-layer organic light emitting diode (OLED by solution processing gave a pure blue emission with Commission Internationale de l’Éclairage 1931 CIE xy = (0.16, 0.12, a peak current efficiency of 0.21 cd/A and a peak luminance of 2700 cd/m2. This represents the first reported pure blue dendrimer emitter with bipolar charge transport and surface-to-core energy transfer in OLEDs.

  11. Blue Light Emitting Polyphenylene Dendrimers with Bipolar Charge Transport Moieties.

    Science.gov (United States)

    Zhang, Guang; Auer-Berger, Manuel; Gehrig, Dominik W; Blom, Paul W M; Baumgarten, Martin; Schollmeyer, Dieter; List-Kratochvil, E J W; Müllen, Klaus

    2016-10-20

    Two light-emitting polyphenylene dendrimers with both hole and electron transporting moieties were synthesized and characterized. Both molecules exhibited pure blue emission solely from the pyrene core and efficient surface-to-core energy transfers when characterized in a nonpolar environment. In particular, the carbazole- and oxadiazole-functionalized dendrimer ( D1 ) manifested a pure blue emission from the pyrene core without showing intramolecular charge transfer (ICT) in environments with increasing polarity. On the other hand, the triphenylamine- and oxadiazole-functionalized one ( D2 ) displayed notable ICT with dual emission from both the core and an ICT state in highly polar solvents. D1 , in a three-layer organic light emitting diode (OLED) by solution processing gave a pure blue emission with Commission Internationale de l'Éclairage 1931 CIE xy = (0.16, 0.12), a peak current efficiency of 0.21 cd/A and a peak luminance of 2700 cd/m². This represents the first reported pure blue dendrimer emitter with bipolar charge transport and surface-to-core energy transfer in OLEDs.

  12. Predicting Freshman Grade Point Average From College Admissions Test Scores and State High School Test Scores

    Directory of Open Access Journals (Sweden)

    Daniel Koretz

    2016-09-01

    Full Text Available The current focus on assessing “college and career readiness” raises an empirical question: How do high school tests compare with college admissions tests in predicting performance in college? We explored this using data from the City University of New York and public colleges in Kentucky. These two systems differ in the choice of college admissions test, the stakes for students on the high school test, and demographics. We predicted freshman grade point average (FGPA from high school GPA and both college admissions and high school tests in mathematics and English. In both systems, the choice of tests had only trivial effects on the aggregate prediction of FGPA. Adding either test to an equation that included the other had only trivial effects on prediction. Although the findings suggest that the choice of test might advantage or disadvantage different students, it had no substantial effect on the over- and underprediction of FGPA for students classified by race-ethnicity or poverty.

  13. Observation of different isoscaling behavior between emitted fragments and residues

    Energy Technology Data Exchange (ETDEWEB)

    Youngs, M., E-mail: mdyoungs@comp.tamu.edu [Cyclotron Institute, Texas A& M University, College Station, TX 77843 (United States); McIntosh, A.B.; Hagel, K. [Cyclotron Institute, Texas A& M University, College Station, TX 77843 (United States); Heilborn, L. [Cyclotron Institute, Texas A& M University, College Station, TX 77843 (United States); Chemistry Department, Texas A& M University, College Station, TX 77843 (United States); Huang, M. [Cyclotron Institute, Texas A& M University, College Station, TX 77843 (United States); Jedele, A.; Kohley, Z.; May, L.W. [Cyclotron Institute, Texas A& M University, College Station, TX 77843 (United States); Chemistry Department, Texas A& M University, College Station, TX 77843 (United States); McCleskey, E. [Cyclotron Institute, Texas A& M University, College Station, TX 77843 (United States); Zarrella, A.; Yennello, S.J. [Cyclotron Institute, Texas A& M University, College Station, TX 77843 (United States); Chemistry Department, Texas A& M University, College Station, TX 77843 (United States)

    2017-06-15

    The traditional isoscaling technique has been used to analyze all isotopically identified particles from {sup 70}Zn+{sup 70}Zn and {sup 64}Zn+{sup 64}Zn collisions at 35 MeV/u. Two additional techniques, using an energy-averaged ratio and using the data present in the tail of energy spectra, are compared to the traditional method and show similar results. Isoscaling fit parameters α and β are found both globally and for each individual series of constant Z and N. The data are then split up between emitted fragments and projectile-like fragments. Isoscaling values for the two different types of fragments are shown to be different, emphasizing the importance of experimentally distinguishing between projectile-like fragments and emitted fragments in order to achieve accurate isoscaling parameters.

  14. Stability of high current diode under 100-nanosecond-pulse voltage

    International Nuclear Information System (INIS)

    Lai Dingguo; Qiu Aici; Zhang Yongmin; Huang Jianjun; Ren Shuqing; Yang Li

    2012-01-01

    Stability of high current diode under pulse voltage with 80 ns and 34 ns rise time was studied on the flash Ⅱ accelerator. Influence of rise time of diode voltage on startup time and cathode emission uniformity and repeatability of diode impedance was analyzed by comparing the experimental results with numerically simulated results, and the influence mechanism was discussed. The startup time of diode increases with the increasing of rise time of voltage, and the repeatability of diode impedance decreases. Discal plane cathode is prone to emit rays intensely in the center area, the time that plasma covers the surface of the cathode increases and the shielding effect has more impact on cathode emission according to the increase of rise time. Local intense emission on the cathode increases expansion speed of plasma and reduces the effective emission area. The stability of characteristic impedance of diode under a pulse voltage with slow rise time is decreased by the combined action of expansion speed of plasma and the effective emission area. (authors)

  15. High-performance tandem organic light-emitting diodes based on a buffer-modified p/n-type planar organic heterojunction as charge generation layer

    Science.gov (United States)

    Wu, Yukun; Sun, Ying; Qin, Houyun; Hu, Shoucheng; Wu, Qingyang; Zhao, Yi

    2017-04-01

    High-performance tandem organic light-emitting diodes (TOLEDs) were realized using a buffer-modified p/n-type planar organic heterojunction (OHJ) as charge generation layer (CGL) consisting of common organic materials, and the configuration of this p/n-type CGL was "LiF/N,N'-diphenyl-N,N'-bis(1-napthyl)-1,1'-biphenyl-4,4'-diamine (NPB)/4,7-diphenyl-1,10-phenanthroline (Bphen)/molybdenum oxide (MoOx)". The optimized TOLED exhibited a maximum current efficiency of 77.6 cd/A without any out-coupling techniques, and the efficiency roll-off was greatly improved compared to the single-unit OLED. The working mechanism of the p/n-type CGL was discussed in detail. It is found that the NPB/Bphen heterojunction generated enough charges under a forward applied voltage and the carrier extraction was a tunneling process. These results could provide a new method to fabricate high-performance TOLEDs.

  16. Demonstration of high current carbon nanotube enabled vertical organic field effect transistors at industrially relevant voltages

    Science.gov (United States)

    McCarthy, Mitchell

    The display market is presently dominated by the active matrix liquid crystal display (LCD). However, the active matrix organic light emitting diode (AMOLED) display is argued to become the successor to the LCD, and is already beginning its way into the market, mainly in small size displays. But, for AMOLED technology to become comparable in market share to LCD, larger size displays must become available at a competitive price with their LCD counterparts. A major issue preventing low-cost large AMOLED displays is the thin-film transistor (TFT) technology. Unlike the voltage driven LCD, the OLEDs in the AMOLED display are current driven. Because of this, the mature amorphous silicon TFT backplane technology used in the LCD must be upgraded to a material possessing a higher mobility. Polycrystalline silicon and transparent oxide TFT technologies are being considered to fill this need. But these technologies bring with them significant manufacturing complexity and cost concerns. Carbon nanotube enabled vertical organic field effect transistors (CN-VFETs) offer a unique solution to this problem (now known as the AMOLED backplane problem). The CN-VFET allows the use of organic semiconductors to be used for the semiconductor layer. Organics are known for their low-cost large area processing compatibility. Although the mobility of the best organics is only comparable to that of amorphous silicon, the CN-VFET makes up for this by orienting the channel vertically, as opposed to horizontally (like in conventional TFTs). This allows the CN-VFET to achieve sub-micron channel lengths without expensive high resolution patterning. Additionally, because the CN-VFET can be easily converted into a light emitting transistor (called the carbon nanotube enabled vertical organic light emitting transistor---CN-VOLET) by essentially stacking an OLED on top of the CN-VFET, more potential benefits can be realized. These potential benefits include, increased aperture ratio, increased OLED

  17. High average power linear induction accelerator development

    International Nuclear Information System (INIS)

    Bayless, J.R.; Adler, R.J.

    1987-07-01

    There is increasing interest in linear induction accelerators (LIAs) for applications including free electron lasers, high power microwave generators and other types of radiation sources. Lawrence Livermore National Laboratory has developed LIA technology in combination with magnetic pulse compression techniques to achieve very impressive performance levels. In this paper we will briefly discuss the LIA concept and describe our development program. Our goals are to improve the reliability and reduce the cost of LIA systems. An accelerator is presently under construction to demonstrate these improvements at an energy of 1.6 MeV in 2 kA, 65 ns beam pulses at an average beam power of approximately 30 kW. The unique features of this system are a low cost accelerator design and an SCR-switched, magnetically compressed, pulse power system. 4 refs., 7 figs

  18. Bi-layer non-doped small-molecular white organic light-emitting diodes with high colour stability

    International Nuclear Information System (INIS)

    Chen Shuming; Kwok, Hoi-Sing; Zhao Zujin; Tang Benzhong; Wang Zhiming; Lu Ping; Gao Zhao; Ma Yuguang

    2011-01-01

    Bi-layer non-doped white organic light-emitting diodes (WOLEDs) with hole-transporting layer 4-(4-(1,2,2-triphenylvinyl)phenyl)-7-(5-(4-(1,2,2-triphenylvinyl)phenyl) thiophen-2yl)benzo[c][1,2,5]thiadiazole (BTPETTD) as a red emitter and electron-transporting layer 4,4'-bis(1-phenyl-1H-phenanthro[9,10-d]imidazol-2-yl)biphenyl (DDPi) as a blue emitter are demonstrated. The blue emission is due to direct recombination of excitons in DPPi, while the red emission originates not only from the direct recombination of excitons in BTPETTD but also from a colour down-conversion process by absorbing blue emission and re-emitting red photons. The combination of blue emission and red emission yields an efficient and extremely stable white colour, regardless of driving voltages. In our demonstration, a bi-layer WOLED with an efficiency of 4.2 cd A -1 at 1000 cd m -2 , 1931 Commision International de L'Eclairage coordinates of (0.31, 0.31) and a high colour rendering index of 92 over a wide range of driving voltages is obtained.

  19. Free-space optical communications with peak and average constraints: High SNR capacity approximation

    KAUST Repository

    Chaaban, Anas

    2015-09-07

    The capacity of the intensity-modulation direct-detection (IM-DD) free-space optical channel with both average and peak intensity constraints is studied. A new capacity lower bound is derived by using a truncated-Gaussian input distribution. Numerical evaluation shows that this capacity lower bound is nearly tight at high signal-to-noise ratio (SNR), while it is shown analytically that the gap to capacity upper bounds is a small constant at high SNR. In particular, the gap to the high-SNR asymptotic capacity of the channel under either a peak or an average constraint is small. This leads to a simple approximation of the high SNR capacity. Additionally, a new capacity upper bound is derived using sphere-packing arguments. This bound is tight at high SNR for a channel with a dominant peak constraint.

  20. Hybrid tunnel junction contacts to III–nitride light-emitting diodes

    KAUST Repository

    Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

    2016-01-01

    In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  1. Hybrid tunnel junction contacts to III–nitride light-emitting diodes

    KAUST Repository

    Young, Erin C.

    2016-01-26

    In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  2. Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes.

    Science.gov (United States)

    Subramanian, Alagesan; Pan, Zhenghui; Zhang, Zhenbo; Ahmad, Imtiaz; Chen, Jing; Liu, Meinan; Cheng, Shuang; Xu, Yijun; Wu, Jun; Lei, Wei; Khan, Qasim; Zhang, Yuegang

    2018-04-18

    All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr 3 -based PeLED with an inverted architecture using lithium-doped TiO 2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A -1 , a luminance efficiency of 2210 cd m -2 , and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr 3 -based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO 2 compared to that for undoped TiO 2 -based devices.

  3. Two stacked tandem white organic light-emitting diodes employing WO3 as a charge generation layer

    Science.gov (United States)

    Bin, Jong-Kwan; Lee, Na Yeon; Lee, SeungJae; Seo, Bomin; Yang, JoongHwan; Kim, Jinook; Yoon, Soo Young; Kang, InByeong

    2016-09-01

    Recently, many studies have been conducted to improve the electroluminescence (EL) performance of organic lightemitting diodes (OLEDs) by using appropriate organic or inorganic materials as charge generation layer (CGL) for their application such as full color displays, backlight units, and general lighting source. In a stacked tandem white organic light-emitting diodes (WOLEDs), a few emitting units are electrically interconnected by a CGL, which plays the role of generating charge carriers, and then facilitate the injection of it into adjacent emitting units. In the present study, twostacked WOLEDs were fabricated by using tungsten oxide (WO3) as inorganic charge generation layer and 1,4,5,8,9,11- hexaazatriphenylene hexacarbonitrile (HAT-CN) as organic charge generation layer (P-CGL). Organic P-CGL materials were used due to their ease of use in OLED fabrication as compared to their inorganic counterparts. To obtain high efficiency, we demonstrate two-stacked tandem WOLEDs as follows: ITO/HIL/HTL/HTL'/B-EML/ETL/N-CGL/P-CGL (WO3 or HAT-CN)/HTL″/YG-EML/ETL/LiF/Al. The tandem devices with blue- and yellow-green emitting layers were sensitive to the thickness of an adjacent layer, hole transporting layer for the YG emitting layer. The WOLEDs containing the WO3 as charge generation layer reach a higher power efficiency of 19.1 lm/W and the current efficiency of 51.2 cd/A with the white color coordinate of (0.316, 0.318) than the power efficiency of 13.9 lm/W, and the current efficiency of 43.7 cd/A for organic CGL, HAT-CN at 10 mA/cm2, respectively. This performance with inserting WO3 as CGL exhibited the highest performance with excellent CIE color coordinates in the two-stacked tandem OLEDs.

  4. Highly efficient red phosphorescent organic light-emitting diodes based on solution processed emissive layer

    International Nuclear Information System (INIS)

    Liu, Baiquan; Xu, Miao; Tao, Hong; Ying, Lei; Zou, Jianhua; Wu, Hongbin; Peng, Junbiao

    2013-01-01

    Highly efficient red phosphorescent organic polymer light-emitting diodes (PhOLEDs) were fabricated based on a solution-processed small-molecule host 4,4′-bis(N-carbazolyl)-1,1′-biphenyl (CBP) by doping an iridium complex, tris(1-(2,6-dimethylphenoxy)-4-(4-chlorophenyl)phthalazine)iridium (III) (Ir(MPCPPZ) 3 ). A hole blocking layer 1,3,5-tri(1-phenyl-1H-benzo[d]imidazol-2-yl)phenyl (TPBI) with a function of electron transport was thermally deposited onto the top of CBP layer. The diode with the structure of ITO/PEDOT:PSS (50 nm)/CBP:Ir(MPCPPZ) 3 (55 nm)/TPBI (30 nm)/Ba (4 nm)/Al (120 nm) showed an external quantum efficiency (QE ext ) of 19.3% and luminous efficiency (LE) of 18.3 cd/A at a current density of 0.16 mA/cm 2 , and Commission International de I'Eclairage (CIE) coordinates of (0.607, 0.375). It was suggested that the diodes using TPBI layer exhibited nearly 100% internal quantum efficiency and one order magnitude enhanced LE or QE ext efficiencies. -- Highlights: • Efficient red PhOLEDs based on a solution-processed small-molecule host were fabricated. • By altering volume ratio of chloroform/chlorobenzene solvent, we got best film quality of CBP. • EQE of the diode was 19.3%, indicating nearly 100% internal quantum yield was achieved

  5. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

    Science.gov (United States)

    Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Liu, Yingce; Liu, Mengling; Liu, Zongyuan; Gui, Chengqun; Liu, Sheng

    2017-10-30

    We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N 2 ambient. A TiW diffusion barrier layer covered onto Ag is used to suppress the agglomeration of Ag and thus maintain high reflectance of Ag during high temperature annealing process. We develop a strip-shaped SiO 2 current blocking layer beneath the ITO/DBR to alleviate current crowding occurring in FCLED with ITO/DBR. Owing to negligibly small spreading resistance of Ag, however, our combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the FCLED with ITO/DBR. As a result, the light output power of FCLED with Ag/TiW is 7.5% higher than that of FCLED with ITO/DBR at 350 mA. The maximum output power of the FCLED with Ag/TiW obtained at 305.6 A/cm 2 is 29.3% larger than that of the FCLED with ITO/DBR obtained at 278.9 A/cm 2 . The improvement appears to be due to the enhanced current spreading and higher optical reflectance provided by the Ag/TiW.

  6. 3.4-Inch Quarter High Definition Flexible Active Matrix Organic Light Emitting Display with Oxide Thin Film Transistor

    Science.gov (United States)

    Hatano, Kaoru; Chida, Akihiro; Okano, Tatsuya; Sugisawa, Nozomu; Inoue, Tatsunori; Seo, Satoshi; Suzuki, Kunihiko; Oikawa, Yoshiaki; Miyake, Hiroyuki; Koyama, Jun; Yamazaki, Shunpei; Eguchi, Shingo; Katayama, Masahiro; Sakakura, Masayuki

    2011-03-01

    In this paper, we report a 3.4-in. flexible active matrix organic light emitting display (AMOLED) display with remarkably high definition (quarter high definition: QHD) in which oxide thin film transistors (TFTs) are used. We have developed a transfer technology in which a TFT array formed on a glass substrate is separated from the substrate by physical force and then attached to a flexible plastic substrate. Unlike a normal process in which a TFT array is directly fabricated on a thin plastic substrate, our transfer technology permits a high integration of high performance TFTs, such as low-temperature polycrystalline silicon TFTs (LTPS TFTs) and oxide TFTs, on a plastic substrate, because a flat, rigid, and thermally-stable glass substrate can be used in the TFT fabrication process in our transfer technology. As a result, this technology realized an oxide TFT array for an AMOLED on a plastic substrate. Furthermore, in order to achieve a high-definition AMOLED, color filters were incorporated in the TFT array and a white organic light-emitting diode (OLED) was combined. One of the features of this device is that the whole body of the device can be bent freely because a source driver and a gate driver can be integrated on the substrate due to the high mobility of an oxide TFT. This feature means “true” flexibility.

  7. White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

    International Nuclear Information System (INIS)

    Guan Yunxia; Niu Lianbin

    2009-01-01

    White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq 3 /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

  8. Low-Voltage Solution-Processed Hybrid Light-Emitting Transistors.

    Science.gov (United States)

    Chaudhry, Mujeeb Ullah; Tetzner, Kornelius; Lin, Yen-Hung; Nam, Sungho; Pearson, Christopher; Groves, Chris; Petty, Michael C; Anthopoulos, Thomas D; Bradley, Donal D C

    2018-05-21

    We report the development of low operating voltages in inorganic-organic hybrid light-emitting transistors (HLETs) based on a solution-processed ZrO x gate dielectric and a hybrid multilayer channel consisting of the heterojunction In 2 O 3 /ZnO and the organic polymer "Super Yellow" acting as n- and p-channel/emissive layers, respectively. Resulting HLETs operate at the lowest voltages reported to-date (<10 V) and combine high electron mobility (22 cm 2 /(V s)) with appreciable current on/off ratios (≈10 3 ) and an external quantum efficiency of 2 × 10 -2 % at 700 cd/m 2 . The charge injection, transport, and recombination mechanisms within this HLET architecture are discussed, and prospects for further performance enhancement are considered.

  9. Yellow emitting Iridium (III) phenyl-benzothiazole complexes with different β-diketone ancillary ligands as dopants in white organic light-emitting diodes

    Science.gov (United States)

    Ivanov, P.; Petrova, P.; Tomova, R.

    2018-03-01

    We discuss the influence of the type of β-diketone ancillary ligand in Iridium (III) bis phenyl-benzothiazole complexes ((bt)2Ir(β-diketone)) on their photophysical and electroluminescent properties when they are used as dopants in white organic light-emitting diodes (WOLED). For this purpose, we investigated four novel yellow cyclometalated complexes: (bt)2Ir(dbm), (bt)2Ir(fmtdbm), (bt)2Ir(tta) and (bt)2Ir(bsm), where dbm = 1,3-diphenylpropane-1,3-dionate; fmtdbm = 1-(4-fluorophenyl)-3-(4-methoxyphenyl)propane-1,3-dionate; tta = 4,4,4-trifluoro-1-(thiophene-2-yl)butane-1,3-dionate; and bsm = 1-phenylicosane-1,3-dionate). To obtain white light by mixing emissions of two complementary colors (yellow emitted by the dopant and blue, by another emitter), we chose the following OLED structure: ITO/doped HTL/ElL/ETL/M, where ITO was a transparent anode of In2O3:SnO2; M, a metallic Al cathode; HTL, 4,4’-Bis(9H-carbazol-9-yl)biphenyl (CBP) involved in a poly(N-vinylcarbazole) (PVK) matrix; ElL, an electroluminescent layer of aluminum(III)bis(2-methyl-8-quninolinato)-4-phenylphenolate (BAlq); and ETL, an electron-transporting layer of zinc(II)bis(2-2-hydroxyphenyl)benzothiazole. We found that all complexes are suitable candidates for fabrication of WOLED. The best results were demonstrated by the device doped with 2 wt % of (bt)2Ir(bsm), which had twice as high luminescence (1100 cd/m2) and one-and-a-half as high current efficiency (5 cd/A) as the device doped with 1.25 wt % of the known (bt)2Ir(acac), with its 580 cd/m2 and 3.4 cd/A at approximately the same CIE (Commission Internationale de L’Eclairage) (x/y) coordinates of the warm white light emitted by the two devices.

  10. Effects of the thickness of NiO hole transport layer on the performance of all-inorganic quantum dot light emitting diode

    International Nuclear Information System (INIS)

    Zhang, Xiao Li; Dai, Hai Tao; Zhao, Jun Liang; Li, Chen; Wang, Shu Guo; Sun, Xiao Wei

    2014-01-01

    All-inorganic quantum dot light emitting diodes (QLEDs) have recently gained great attention owing to their high stability under oxygenic, humid environment and higher operating currents. In this work, we fabricated all-inorganic CdSe/ZnS core-shell QLEDs composed of ITO/NiO/QDs/ZnO/Al, in which NiO and ZnO thin film deposited via all-solution method were employed as hole and electron transport layer, respectively. To achieve high light emitting efficiency, the balance transport between electrons and holes play a key role. In this work, the effects of the thickness of NiO film on the performance of QLEDs were explored experimentally in details. NiO layers with various thicknesses were prepared with different rotation speeds. Experimental results showed that thinner NiO layer deposited at higher rotation speed had higher transmittance and larger band gap. Four typical NiO thickness based QLEDs were fabricated to optimize the hole transport layer. Thinner NiO layer based device performs bright emission with high current injection, which is ascribed to the reduced barrier height between hole transport layer and quantum dot. - Highlights: • All-inorganic quantum dot light emitting diodes (QLEDs) were fabricated. • Thinner NiO film can effectively enhance on–off properties of devices. • Improved performance of QLEDs is mainly attributed to energy barrier reduction

  11. Trap-assisted and Langevin-type recombination in organic light-emitting diodes

    Science.gov (United States)

    Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

    2011-04-01

    Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the diffusion-dominated regime has a temperature-independent value of 2, which reveals that nonradiative trap-assisted recombination dominates the current. In contrast, the ideality factor of the light output approaches unity, demonstrating that luminance is governed by recombination of the bimolecular Langevin type. This apparent contradiction can be resolved by measuring the current and luminance ideality factor for a white-emitting polymer, where both free and trapped charge carriers recombine radiatively. With increasing bias voltage, Langevin recombination becomes dominant over trap-assisted recombination due to its stronger dependence on carrier density, leading to an enhancement in OLED efficiency.

  12. Infrared Organic Light-Emitting Diodes with Carbon Nanotube Emitters.

    Science.gov (United States)

    Graf, Arko; Murawski, Caroline; Zakharko, Yuriy; Zaumseil, Jana; Gather, Malte C

    2018-03-01

    While organic light-emitting diodes (OLEDs) covering all colors of the visible spectrum are widespread, suitable organic emitter materials in the near-infrared (nIR) beyond 800 nm are still lacking. Here, the first OLED based on single-walled carbon nanotubes (SWCNTs) as the emitter is demonstrated. By using a multilayer stacked architecture with matching charge blocking and charge-transport layers, narrow-band electroluminescence at wavelengths between 1000 and 1200 nm is achieved, with spectral features characteristic of excitonic and trionic emission of the employed (6,5) SWCNTs. Here, the OLED performance is investigated in detail and it is found that local conduction hot-spots lead to pronounced trion emission. Analysis of the emissive dipole orientation shows a strong horizontal alignment of the SWCNTs with an average inclination angle of 12.9° with respect to the plane, leading to an exceptionally high outcoupling efficiency of 49%. The SWCNT-based OLEDs represent a highly attractive platform for emission across the entire nIR. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Strengthened glass for high average power laser applications

    International Nuclear Information System (INIS)

    Cerqua, K.A.; Lindquist, A.; Jacobs, S.D.; Lambropoulos, J.

    1987-01-01

    Recent advancements in high repetition rate and high average power laser systems have put increasing demands on the development of improved solid state laser materials with high thermal loading capabilities. The authors have developed a process for strengthening a commercially available Nd doped phosphate glass utilizing an ion-exchange process. Results of thermal loading fracture tests on moderate size (160 x 15 x 8 mm) glass slabs have shown a 6-fold improvement in power loading capabilities for strengthened samples over unstrengthened slabs. Fractographic analysis of post-fracture samples has given insight into the mechanism of fracture in both unstrengthened and strengthened samples. Additional stress analysis calculations have supported these findings. In addition to processing the glass' surface during strengthening in a manner which preserves its post-treatment optical quality, the authors have developed an in-house optical fabrication technique utilizing acid polishing to minimize subsurface damage in samples prior to exchange treatment. Finally, extension of the strengthening process to alternate geometries of laser glass has produced encouraging results, which may expand the potential or strengthened glass in laser systems, making it an exciting prospect for many applications

  14. High average power diode pumped solid state lasers for CALIOPE

    International Nuclear Information System (INIS)

    Comaskey, B.; Halpin, J.; Moran, B.

    1994-07-01

    Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

  15. Fabrication, characterization and applications of flexible vertical InGaN micro-light emitting diode arrays.

    Science.gov (United States)

    Tian, Pengfei; McKendry, Jonathan J D; Gu, Erdan; Chen, Zhizhong; Sun, Yongjian; Zhang, Guoyi; Dawson, Martin D; Liu, Ran

    2016-01-11

    Flexible vertical InGaN micro-light emitting diode (micro-LED) arrays have been fabricated and characterized for potential applications in flexible micro-displays and visible light communication. The LED epitaxial layers were transferred from initial sapphire substrates to flexible AuSn substrates by metal bonding and laser lift off techniques. The current versus voltage characteristics of flexible micro-LEDs degraded after bending the devices, but the electroluminescence spectra show little shift even under a very small bending radius 3 mm. The high thermal conductivity of flexible metal substrates enables high thermal saturation current density and high light output power of the flexible micro-LEDs, benefiting the potential applications in flexible high-brightness micro-displays and high-speed visible light communication. We have achieved ~40 MHz modulation bandwidth and 120 Mbit/s data transmission speed for a typical flexible micro-LED.

  16. White organic light-emitting diodes with 9, 10-bis (2-naphthyl) anthracene

    Energy Technology Data Exchange (ETDEWEB)

    Guan Yunxia; Niu Lianbin [Key Laboratory of Optical Engineering, College of Physics and Information Technology, Chongqing Normal University, Chongqing 400047 (China)], E-mail: gyxybsy@126.com, E-mail: niulb03@126.com

    2009-03-01

    White organic light-emitting diodes were fabricated by 9, 10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene with a structure of ITO/copper phthalocyanine (CuPc) / NPB /ADN: Rubrene /Alq{sub 3} /CsF/Mg:Ag/Ag. Multilayer organic devices using AND and Rubrene as an emitting layer produced white emissions with good chromaticity and luminous efficiency as high as 5.93 cd/A. This performance can be explained by Foerster energy transfer from the blue-emitting host to the orange-emitting dopant.

  17. A robust yellow-emitting metallophosphor with electron-injection/-transporting traits for highly efficient white organic light-emitting diodes.

    Science.gov (United States)

    Zhou, Guijiang; Yang, Xiaolong; Wong, Wai-Yeung; Wang, Qi; Suo, Si; Ma, Dongge; Feng, Jikang; Wang, Lixiang

    2011-10-24

    With the aim of endowing triplet emitters in the development of organic light-emitting devices (OLEDs) with electron-injection/-transporting (EI/ET) features, the phenylsulfonyl moiety was introduced into the phenyl ring of a 2-phenylpyridine (Hppy) ligand and the yellow phosphorescent heteroleptic iridium(III) complex 1 was developed. It was shown that the SO(2)Ph unit could provide EI/ET character to 1, as indicated from both electrochemical and computational data. Complex 1 is a promising yellow-emitting material for both monochromatic OLEDs and white OLEDs (WOLEDs). The outstanding electronic traits associated with 1, coupled with careful device design, afforded very attractive electroluminescent performances for two-element WOLEDs, including a low turn-on voltage of less than 3.7 V, a maximum brightness of 48,000 cd m(-2), an external quantum efficiency of 13.0%, a luminance efficiency of 34.7 cd A(-1), and a power efficiency of 24.3 Lm W(-1). In addition, a good color rendering index (CRI) of about 74, a stable white color with a Commission Internationale de L'Eclairage (CIE(x,y)) variation of Δ(x, y) OLED research. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Backward emitted high-energy neutrons in hard reactions of p and π+ on carbon

    Science.gov (United States)

    Malki, A.; Alster, J.; Asryan, G.; Averichev, Y.; Barton, D.; Baturin, V.; Bukhtoyarova, N.; Carroll, A.; Heppelmann, S.; Kawabata, T.; Leksanov, A.; Makdisi, Y.; Minina, E.; Navon, I.; Nicholson, H.; Ogawa, A.; Panebratsev, Yu.; Piasetzky, E.; Schetkovsky, A.; Shimanskiy, S.; Tang, A.; Watson, J. W.; Yoshida, H.; Zhalov, D.

    2002-01-01

    Beams of protons and pions of 5.9 GeV/c were incident on a C target. Neutrons emitted into the backward hemisphere, in the laboratory system, were detected in (triple) coincidence with two emerging particles of tranverse momenta pt>0.6 GeV/c. We determined that for (46.5+/-3.7)% of the proton-induced events and for (40.8+/-4.5)% of the pion-induced events with the two high-pt particles, there is also at least one backward emitted neutron with momentum greater than 0.32 GeV/c. This observation is in sharp contrast to a well- established universal pattern from a large variety of earlier inclusive measurements with hadrons, electrons, photons, neutrinos, and antineutrinos where the probability for backward nucleon emission was in the 5 to 10 % range. We present also a measurement of the momentum spectra for the backward going neutrons. The spectra have the same universal shape observed in the inclusive reactions. We speculate that the enhanced backward neutron emission in this semi-inclusive region could be an indication for a strong dependence of the cross section on the squared total center-of-mass energy (s) and for the importance of short-range nucleon-nucleon correlations.

  19. Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

    Science.gov (United States)

    Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

    2018-06-01

    Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

  20. Characterization of high-current, high-temperature superconductor current lead elements

    International Nuclear Information System (INIS)

    Niemann, R.C.; Evans, D.J.; Fisher, B.L.; Brockenborough, W.E.; Roberts, P.R.; Rodenbush, A.J.

    1996-08-01

    The refrigeration loads of current leads for superconducting magnets can be significantly reduced by using high-temperature superconductor (HTS) leads. An HTS conductor type that is well suited for this application is a laminated sintered stack of HTS powder-in-tube (PIT) tapes. The superconducting elements are normally characterized by their manufacturer by measuring critical currents at 77 K in self field. Additional characterization, which correlates electrical performance at 77 K and at lower temperatures with applied magnetic fields, provides the current lead designer and conductor element manufacturer with critical information. For HTS conductor elements comprising a laminated and sintered stack of Bi-2223 PIT tapes having an alloyed Ag sheath, this characterization uses variable applied fields and operating temperatures

  1. Side-emitting high-power LEDs and their application in illumination

    Science.gov (United States)

    West, Robert S.

    2002-11-01

    Due to the rapid increase in flux performance from High Power LED's, illumination is an exciting growth market for solid state lighting. Today a white LED is 100+ Lm per device. This is approximately an order of magnitude below the kLm metric used for illumination applications. The radiation pattern from the LED is key in increasing the usable flux resulting in improved systems optical performance. This advancement in radiation pattern will allow new market opportunities, which were not yet feasible. In the future this effect of usable lumens will become more important as the flux per package increases. The radiation pattern of the LEDs can be controlled to optimize performance, appearance, and shape of the secondary optics. This advantage is unique to LEDs and can greatly improve system performance, control, and cosmetic appeal for the application. This paper will review the side emitting lens design, the integrated performance of this technology to secondary optics and how the Luxeon side emitter enables improved performance by creating more useable lumens.

  2. Solution-Processed Phosphorescent Organic Light-Emitting Diodes with Ultralow Driving Voltage and Very High Power Efficiency

    OpenAIRE

    Wang, Shumeng; Wang, Xingdong; Yao, Bing; Zhang, Baohua; Ding, Junqiao; Xie, Zhiyuan; Wang, Lixiang

    2015-01-01

    To realize power efficient solution-processed phosphorescent organic light-emitting diodes (s-PhOLEDs), the corresponding high driving voltage issue should be well solved. To solve it, efforts have been devoted to the exploitation of novel host or interfacial materials. However, the issues of charge trapping of phosphor and/or charge injection barrier are still serious, largely restraining the power efficiency (PE) levels. Herein, with the utilization of an exciplex-forming couple 4, 4?, 4? -...

  3. Characteristics of organic light emitting diodes with copper iodide as injection layer

    Energy Technology Data Exchange (ETDEWEB)

    Stakhira, P., E-mail: stakhira@polynet.lviv.u [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Cherpak, V.; Volynyuk, D.; Ivastchyshyn, F. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Hotra, Z. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Rzeszow University of Technology, W. Pola 2, Rzeszow, 35-959 (Poland); Tataryn, V. [Lviv Polytechnic National University, S. Bandera, 12, Lviv, 79013 (Ukraine); Luka, G. [Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, 02-668 Warsaw (Poland)

    2010-09-30

    We have studied the use of a thin copper iodide (CuI) film as an efficient injection layer of holes from indium tin oxide (ITO) anode in a light-emitting diode structure based on tris-8-hydroxyquinoline aluminium (Alq3). The results of impedance analysis of two types of diode structures, ITO/CuI/Alq3/poly(ethylene glycol) dimethyl ether/Al and ITO/Alq3/poly(ethylene glycol) dimethyl ether/Al, are presented. Comparative analysis of their current density-voltage, luminance-voltage and impedance characteristics shows that presence of CuI layer facilitates injection of holes from ITO anode into the light-emitting layer Alq3 and increases electroluminescence efficiency of the organic light emitting diodes.

  4. Auger Emitting Radiopharmaceuticals for Cancer Therapy

    Science.gov (United States)

    Falzone, Nadia; Cornelissen, Bart; Vallis, Katherine A.

    Radionuclides that emit Auger electrons have been of particular interest as therapeutic agents. This is primarily due to the short range in tissue, controlled linear paths and high linear energy transfer of these particles. Taking into consideration that ionizations are clustered within several cubic nanometers around the point of decay the possibility of incorporating an Auger emitter in close proximity to the cancer cell DNA has immense therapeutic potential thus making nuclear targeted Auger-electron emitters ideal for precise targeting of cancer cells. Furthermore, many Auger-electron emitters also emit γ-radiation, this property makes Auger emitting radionuclides a very attractive option as therapeutic and diagnostic agents in the molecular imaging and management of tumors. The first requirement for the delivery of Auger emitting nuclides is the definition of suitable tumor-selective delivery vehicles to avoid normal tissue toxicity. One of the main challenges of targeted radionuclide therapy remains in matching the physical and chemical characteristics of the radionuclide and targeting moiety with the clinical character of the tumor. Molecules and molecular targets that have been used in the past can be classified according to the carrier molecule used to deliver the Auger-electron-emitting radionuclide. These include (1) antibodies, (2) peptides, (3) small molecules, (4) oligonucleotides and peptide nucleic acids (PNAs), (5) proteins, and (6) nanoparticles. The efficacy of targeted radionuclide therapy depends greatly on the ability to increase intranuclear incorporation of the radiopharmaceutical without compromising toxicity. Several strategies to achieve this goal have been proposed in literature. The possibility of transferring tumor therapy based on the emission of Auger electrons from experimental models to patients has vast therapeutic potential, and remains a field of intense research.

  5. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  6. Efficient white organic light emitting devices with dual emitting layers

    Energy Technology Data Exchange (ETDEWEB)

    Wu Yaoshan [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Hwang Shiaowen [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)]. E-mail: jesse@faculty.nctu.edu.tw; Chen Hsianhung [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Lee Mengting [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Shen Wenjian [Department of Applied Chemistry, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China); Chen, C.H. [Display Institute, Microelectronics and Information Systems Research Center, National Chiao Tung University, Hsinchu, Taiwan, 30050 (China)

    2005-09-22

    In this paper, a new white organic light-emitting device (OLED) with the structure of indium tin oxide / CF {sub x} / 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-biphenyl (NPB) (30 nm)/NPB: 2,8-di(t-butyl)-5,11-di[4-(t-butyl)phenyl]-6,12-diphenylnaphthacene (20 nm; 1.6 %) / 2-methyl-9,10-di(2-naphthyl) anthracene: p-bis(p-N,N-di-phenyl-aminostyryl)benzene (40 nm, 3%) / aluminum tris(8-hydroxyquinoline) (20 nm) / LiF (1 nm) / Al (200 nm) has been investigated. The device showed white emission with a high-luminous yield of 9.75 cd/A at 20 mA/cm{sup 2}, but its Commission Internationale de l'Eclairage chromaticity coordinates appeared to change from (0.34, 0.42) at 6 mA/cm2 to (0.27, 0.37) at 200 mA/cm{sup 2} due to the shift of recombination zone. The change of color with drive current was suppressed by introduction of an electron-blocking layer of NPB along with a hole-blocking layer of aluminum (III) bis(2-methyl-8-quinolinato)4-phenylphenolato to the white OLED which successfully confined the recombination site and achieved a luminous yield of 9.9 cd/A at 20 mA/cm{sup 2}.

  7. Highly transparent and conductive double-layer oxide thin films as anodes for organic light-emitting diodes

    International Nuclear Information System (INIS)

    Yang Yu; Wang Lian; Yan He; Jin Shu; Marks, Tobin J.; Li Shuyou

    2006-01-01

    Double-layer transparent conducting oxide thin film structures containing In-doped CdO (CIO) and Sn-doped In 2 O 3 (ITO) layers were grown on glass by metal-organic chemical vapor deposition and ion-assisted deposition (IAD), respectively, and used as anodes for polymer light-emitting diodes (PLEDs). These films have a very low overall In content of 16 at. %. For 180-nm-thick CIO/ITO films, the sheet resistance is 5.6 Ω/□, and the average optical transmittance is 87.1% in the 400-700 nm region. The overall figure of merit (Φ=T 10 /R sheet ) of the double-layer CIO/ITO films is significantly greater than that of single-layer CIO, IAD-ITO, and commercial ITO films. CIO/ITO-based PLEDs exhibit comparable or superior device performance versus ITO-based control devices. CIO/ITO materials have a much lower sheet resistance than ITO, rendering them promising low In content electrode materials for large-area optoelectronic devices

  8. Three-peak standard white organic light-emitting devices for solid-state lighting

    Science.gov (United States)

    Guo, Kunping; Wei, Bin

    2014-12-01

    Standard white organic light-emitting device (OLED) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency red OLED employing phosphorescent dopant has been investigated. The device generates saturated red emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.66, 0.34), characterized by a low driving voltage of 3.5 V and high external quantum efficiency of 20.1% at 130 cd m-2. In addition, we have demonstrated a two-peak cold white OLED by combining with a pure blue emitter with the electroluminescent emission of 464 nm, 6, 12-bis{[N-(3,4-dimethylpheyl)-N-(2,4,5-trimethylphenyl)]} chrysene (BmPAC). It was found that the man-made lighting device capable of yielding a relatively stable color emission within the luminance range of 1000-5000 cd m-2. And the chromaticity coordinates, varying from (0.25, 0.21) to (0.23, 0.21). Furthermore, an ultrathin layer of green-light-emitting tris (2-phenylpyridinato)iridium(Ⅲ) Ir(ppy)3 in the host material was introduced to the emissive region for compensating light. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 1280 cd m-2 at 5.0 V and 5150 cd m-2 at 7.0 V, respectively. The CIE coordinates of the emitted light are quite stable at current densities from 759 cd m-2 to 5150 cd m-2, ranging from (0.34, 0.37) to (0.33, 0.33).

  9. High-average-power laser medium based on silica glass

    Science.gov (United States)

    Fujimoto, Yasushi; Nakatsuka, Masahiro

    2000-01-01

    Silica glass is one of the most attractive materials for a high-average-power laser. We have developed a new laser material base don silica glass with zeolite method which is effective for uniform dispersion of rare earth ions in silica glass. High quality medium, which is bubbleless and quite low refractive index distortion, must be required for realization of laser action. As the main reason of bubbling is due to hydroxy species remained in the gelation same, we carefully choose colloidal silica particles, pH value of hydrochloric acid for hydrolysis of tetraethylorthosilicate on sol-gel process, and temperature and atmosphere control during sintering process, and then we get a bubble less transparent rare earth doped silica glass. The refractive index distortion of the sample also discussed.

  10. Bipolar Electrode Array Embedded in a Polymer Light-Emitting Electrochemical Cell.

    Science.gov (United States)

    Gao, Jun; Chen, Shulun; AlTal, Faleh; Hu, Shiyu; Bouffier, Laurent; Wantz, Guillaume

    2017-09-20

    A linear array of aluminum discs is deposited between the driving electrodes of an extremely large planar polymer light-emitting electrochemical cell (PLEC). The planar PLEC is then operated at a constant bias voltage of 100 V. This promotes in situ electrochemical doping of the luminescent polymer from both the driving electrodes and the aluminum discs. These aluminum discs function as discrete bipolar electrodes (BPEs) that can drive redox reactions at their extremities. Time-lapse fluorescence imaging reveals that p- and n-doping that originated from neighboring BPEs can interact to form multiple light-emitting p-n junctions in series. This provides direct evidence of the working principle of bulk homojunction PLECs. The propagation of p-doping is faster from the BPEs than from the positive driving electrode due to electric field enhancement at the extremities of BPEs. The effect of field enhancement and the fact that the doping fronts only need to travel the distance between the neighboring BPEs to form a light-emitting junction greatly reduce the response time for electroluminescence in the region containing the BPE array. The near simultaneous formation of multiple light-emitting p-n junctions in series causes a measurable increase in cell current. This indicates that the region containing a BPE is much more conductive than the rest of the planar cell despite the latter's greater width. The p- and n-doping originating from the BPEs is initially highly confined. Significant expansion and divergence of doping occurred when the region containing the BPE array became more conductive. The shape and direction of expanded doping strongly suggest that the multiple light-emitting p-n junctions, formed between and connected by the array of metal BPEs, have functioned as a single rod-shaped BPE. This represents a new type of BPE that is formed in situ and as a combination of metal, doped polymers, and forward-biased p-n junctions connected in series.

  11. An iterative model for the steady state current distribution in oxide-confined vertical-cavity surface-emitting lasers (VCSELs)

    Science.gov (United States)

    Chuang, Hsueh-Hua

    The purpose of this dissertation is to develop an iterative model for the analysis of the current distribution in vertical-cavity surface-emitting lasers (VCSELs) using a circuit network modeling approach. This iterative model divides the VCSEL structure into numerous annular elements and uses a circuit network consisting of resistors and diodes. The measured sheet resistance of the p-distributed Bragg reflector (DBR), the measured sheet resistance of the layers under the oxide layer, and two empirical adjustable parameters are used as inputs to the iterative model to determine the resistance of each resistor. The two empirical values are related to the anisotropy of the resistivity of the p-DBR structure. The spontaneous current, stimulated current, and surface recombination current are accounted for by the diodes. The lateral carrier transport in the quantum well region is analyzed using drift and diffusion currents. The optical gain is calculated as a function of wavelength and carrier density from fundamental principles. The predicted threshold current densities for these VCSELs match the experimentally measured current densities over the wavelength range of 0.83 mum to 0.86 mum with an error of less than 5%. This model includes the effects of the resistance of the p-DBR mirrors, the oxide current-confining layer and spatial hole burning. Our model shows that higher sheet resistance under the oxide layer reduces the threshold current, but also reduces the current range over which single transverse mode operation occurs. The spatial hole burning profile depends on the lateral drift and diffusion of carriers in the quantum wells but is dominated by the voltage drop across the p-DBR region. To my knowledge, for the first time, the drift current and the diffusion current are treated separately. Previous work uses an ambipolar approach, which underestimates the total charge transferred in the quantum well region, especially under the oxide region. However, the total

  12. White emission from nano-structured top-emitting organic light-emitting diodes based on a blue emitting layer

    International Nuclear Information System (INIS)

    Hyun, Woo Jin; Park, Jung Jin; Park, O Ok; Im, Sang Hyuk; Chin, Byung Doo

    2013-01-01

    We demonstrated that white emission can be obtained from nano-structured top-emitting organic light-emitting diodes (TEOLEDs) based on a blue emitting layer (EML). The nano-structured TEOLEDs were fabricated on nano-patterned substrates, in which both optical micro-cavity and scattering effects occur simultaneously. Due to the combination of these two effects, the electroluminescence spectra of the nano-structured device with a blue EML exhibited not only blue but also yellow colours, which corresponded to the intrinsic emission of the EML and the resonant emission of the micro-cavity effect. Consequently, it was possible to produce white emission from nano-structured TEOLEDs without employing a multimode micro-cavity. The intrinsic emission wavelength can be varied by altering the dopant used for the EML. Furthermore, the emissive characteristics turned out to be strongly dependent on the nano-pattern sizes of the nano-structured devices. (paper)

  13. Improved color purity and efficiency by a coguest emitter system in doped red light-emitting devices

    Energy Technology Data Exchange (ETDEWEB)

    Chen Jiangshan [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China); Ma Dongge [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate School of Chinese Academy of Sciences, Changchun 130022 (China)]. E-mail: mdg1014@ciac.jl.cn

    2007-01-15

    We demonstrate red organic light-emitting diodes (OLEDs) with improved color purity and electroluminescence (EL) efficiency by codoping a green fluorescent sensitizer 10-(2-benzothiazolyl)-2,3,6,7-tetrahydro-1,1,7,7-tetramethyl-1H,5H,11H -(1)-benzopyropyrano(6,7-8-i,j)quinolizin-11-one (C545T) as the second dopant and a red fluorescent dye 4-(dicyanomethylene)-2-t-butyl-6(1,1,7,7-tetramethyljulolidyl-9-enyl) -4H-pyran (DCJTB) as the lumophore into tris(8-hydroquinoline) aluminum (Alq{sub 3}) host. It was found that the C545T dopant did not by itself emit but assisted the carrier trapping from the host Alq{sub 3} to the red emitting dopant. The red OLEDs realized by this approach not only kept the purity of the emission color, but also significantly improved the EL efficiency. The current efficiency and power efficiency, respectively, reached 12cd/A at a current density of 0.3mA/cm{sup 2} and 10lm/W at a current density of 0.02mA/cm{sup 2}, which are enhanced by 1.4 and 2.6 times compared with devices where the emissive layer is composed of the DCJTB doped Alq{sub 3}, and a stable red emission (chromaticity coordinates: x=0.64, y=0.36) was obtained in a wide range of voltage. Our results indicate that the coguest system is a promising method for obtaining high-efficiency red OLEDs.

  14. Topology optimisation of passive coolers for light-emitting diode lamps

    DEFF Research Database (Denmark)

    Alexandersen, Joe

    2015-01-01

    This work applies topology optimisation to the design of passive coolers for light-emitting diode (LED) lamps. The heat sinks are cooled by the natural convection currents arising from the temperature difference between the LED lamp and the surrounding air. A large scale parallel computational....... The optimisation results show interesting features that are currently being incorporated into industrial designs for enhanced passive cooling abilities....

  15. Time and space resolved spectroscopic investigation during anode plume formation in a high-current vacuum arc

    Science.gov (United States)

    Khakpour, A.; Methling, R.; Uhrlandt, D.; Franke, St.; Gortschakow, S.; Popov, S.; Batrakov, A.; Weltmann, K. D.

    2017-05-01

    This paper presents time and space resolved results of spectroscopic measurements during the formation of an anode plume in the late current pulse phase of a high-current vacuum arc. The formation of the anode plume is investigated systematically based on the occurrence of high-current anode spots, depending on gap distance and current for AC 100 Hz and CuCr7525 butt contacts with a diameter of 10 mm. The anode plume is observed after the extinction of anode spot type 2 in which both the anode and cathode are active. It is concluded from the spatial profiles of the atomic and ionic radiation, parallel and perpendicular to anode surface, that the inner part of the plume is dominated by Cu I radiation, whereas a halo of light emitted by Cu II covers the plume. The radiation intensity of Cu III lines is quite low across the whole anode plume. Upper level excited state densities corresponding to Cu I lines at 510.55, 515.32, 521.82, 578.21 nm are determined. The temporal evolution of the resulting excitation temperature in the centre of the plume varies from 8500 K to 6000 K at 500 µs to 100 µs before current zero, respectively. The density calculated for Cu I at position in the plume is in the range of 1-5  ×  1019 m-3.

  16. Recombination zone in white organic light emitting diodes with blue and orange emitting layers

    Science.gov (United States)

    Tsuboi, Taiju; Kishimoto, Tadashi; Wako, Kazuhiro; Matsuda, Kuniharu; Iguchi, Hirofumi

    2012-10-01

    White fluorescent OLED devices with a 10 nm thick blue-emitting layer and a 31 nm thick orange-emitting layer have been fabricated, where the blue-emitting layer is stacked on a hole transport layer. An interlayer was inserted between the two emitting layers. The thickness of the interlayer was changed among 0.3, 0.4, and 1.0 nm. White emission with CIE coordinates close to (0.33, 0.33) was observed from all the OLEDs. OLED with 0.3 nm thick interlayer gives the highest maximum luminous efficiency (11 cd/A), power efficiency (9 lm/W), and external quantum efficiency (5.02%). The external quantum efficiency becomes low with increasing the interlayer thickness from 0 nm to 1.0 nm. When the location of the blue- and orange-emitting layers is reversed, white emission was not obtained because of too weak blue emission. It is suggested that the electron-hole recombination zone decreases nearly exponentially with a distance from the hole transport layer.

  17. Pentobarbital quantitation using EMIT serum barbiturate assay reagents: application to monitoring of high-dose pentobarbital therapy.

    Science.gov (United States)

    Pape, B E; Cary, P L; Clay, L C; Godolphin, W

    1983-01-01

    Pentobarbital serum concentrations associated with a high-dose therapeutic regimen were determined using EMIT immunoassay reagents. Replicate analyses of serum controls resulted in a within-assay coefficient of variation of 5.0% and a between-assay coefficient of variation of 10%. Regression analysis of 44 serum samples analyzed by this technique (y) and a reference procedure (x) were y = 0.98x + 3.6 (r = 0.98; x = ultraviolet spectroscopy) and y = 1.04x + 2.4 (r = 0.96; x = high-performance liquid chromatography). Clinical evaluation of the results indicates the immunoassay is sufficiently sensitive and selective for pentobarbital to allow accurate quantitation within the therapeutic range associated with high-dose therapy.

  18. Harmonic current prediction by impedance modeling of grid-tied inverters

    DEFF Research Database (Denmark)

    Pereira, Heverton A.; Freijedo, Francisco D.; Silva, M. M.

    2017-01-01

    and harmonic voltage profiles. Results reinforce that impedance models can represent with relatively accuracy the harmonic current emitted by the PV plants at the point of common coupling (PCC). Lastly, a stress test is performed to show how a variation in the harmonic voltage phase angle impacts the PV plant...... impedance models when used in harmonic integration studies. It is aimed to estimate the harmonic current contribution as a function of the background harmonic voltages components. Time domain simulations based on detailed and average models are compared with the impedance model developed in frequency domain....... In grids with harmonic voltages, impedance models can predict the current distortion for all active power injection scenarios. Furthermore, measurements in a 1.4 MW PV plant connected in a distributed grid are used to validate the simulation based on impedance models during different power injections...

  19. A high-energy, low-threshold tunable intracavity terahertz-wave parametric oscillator with surface-emitted configuration

    International Nuclear Information System (INIS)

    Wang, Y Y; Xu, D G; Jiang, H; Zhong, K; Yao, J Q

    2013-01-01

    A high-energy, low-threshold THz-wave output has been experimentally demonstrated with an intracavity terahertz-wave parametric oscillator based on a surface-emitted configuration, which was pumped by a diode-side-pumped Q-switched Nd:YAG laser. Different beam sizes and repetition rates of the pump light have been investigated for high-energy and high-efficiency THz-wave generation. The maximum THz-wave output energy of 283 nJ/pulse was obtained at 1.54 THz under an intracavity 1064 nm pump energy of 59 mJ. The conversion efficiency was 4.8 × 10 −6 , corresponding to a photon conversion efficiency of 0.088%. The pump threshold was 12.9 mJ/pulse. A continuously tunable range from 0.75 to 2.75 THz was realized. (paper)

  20. Development of high-average-power-laser medium based on silica glass

    International Nuclear Information System (INIS)

    Fujimoto, Yasushi; Nakatsuka, Masahiro

    2000-01-01

    We have developed a high-average-power laser material based on silica glass. A new method using Zeolite X is effective for homogeneously dispersing rare earth ions in silica glass to get a high quantum yield. High quality medium, which is bubbleless and quite low refractive index distortion, must be required for realization of laser action, and therefore, we have carefully to treat the gelation and sintering processes, such as, selection of colloidal silica, pH value of for hydrolysis of tetraethylorthosilicate, and sintering history. The quality of the sintered sample and the applications are discussed. (author)

  1. Degradation of phosphorescent blue organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chiu, Chien-Shu [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Steinbacher, Frank [Department of Materials Science VI, University of Erlangen-Nuernberg (Germany); Siemens AG, CT MM 1, Erlangen (Germany); Krause, Ralf; Hunze, Arvid [Siemens AG, CT MM 1, Erlangen (Germany); Kowalsky, Wolfgang [Department of Electrical Engineering and Information Technology, Technical University of Braunschweig (Germany)

    2009-07-01

    Development of phosphorescent materials has significantly improved the efficiency of organic light-emitting diodes (OLEDs). By using efficient red, green and blue phosphorescent emitter materials high efficient white OLEDs can be achieved. However, due to low stability of blue phosphorescent materials the lifetime of phosphorescent white OLEDs remains an issue. As a result, degradation of blue phosphorescent materials needs to be further investigated and improved. In this work, blue OLED devices based on the phosphorescent emitter FIrpic were investigated. Single-carrier hole-only as well as electron-only devices were fabricated. For investigation of degradation process the devices were stressed with electrical current and UV-light to study the impact of charge carriers as well as excitons and exciton-polaron quenching on the stability of the blue dye.

  2. All-inorganic quantum-dot light-emitting-diodes with vertical nickel oxide nanosheets as hole transport layer

    Directory of Open Access Journals (Sweden)

    Jiahui Li

    2016-10-01

    Full Text Available All-inorganic quantum dot light emitting diodes (QLEDs have gained great attention as a result of their high stability under oxygen-rich, humid and high current working conditions. In this work, we have fabricated an all-inorganic QLED device (FTO/NiO/QDs/AZO/Ag with sandwich-structure, wherein the inorganic metal oxides thin films of NiO and AZO were employed as hole and electron transport layers, respectively. The porous NiO layer with vertical lamellar nanosheets interconnected microstructure have been directly synthesized on the substrate of conductive FTO glass and increased the wettability of CdSe@ZnS QDs, which result in an enhancement of current transport performance of the QLED.

  3. The most intense electric currents in turbulent high speed solar wind

    Science.gov (United States)

    Podesta, J. J.

    2017-12-01

    Theory and simulations suggest that dissipation of turbulent energy in collisionless astrophysical plasmas occurs most rapidly in spatial regions where the current density is most intense. To advance understanding of plasma heating by turbulent dissipation in the solar corona and solar wind, it is of interest to characterize the properties of plasma regions where the current density takes exceptionally large values and to identify the operative dissipation processes. In the solar wind, the curl of the magnetic field cannot be measured using data from a single spacecraft, however, a suitable proxy for this quantity can be constructed from the spatial derivative of the magnetic field along the flow direction of the plasma. This new approach is used to study the properties of the most intense current carrying structures in a high speed solar wind stream near 1 AU. In this study, based on 11 Hz magnetometer data from the WIND spacecraft, the spatial resolution of the proxy technique is approximately equal to the proton inertial length. Intense current sheets or current carrying structures were identified as events where the magnitude of the current density exceeds μ+5σ, where μ and σ are the mean and standard deviation of the magnitude of the current density (or its proxy), respectively. Statistical studies show (1) the average size of these 5σ events is close to the smallest resolvable scale in the data set, the proton inertial length; (2) the linear distance between neighboring events follows a power law distribution; and (3) the average peak current density of 5σ events is around 1 pA/cm2. The analysis techniques used in these studies have been validated using simulated spacecraft data from three dimensional hybrid simulations which show that results based on the analysis of the proxy are qualitatively and quantitatively similar to results based on the analysis of the true current density.

  4. Li4SrCa(SiO4)2:Ce3+, a highly efficient near-UV and blue emitting orthosilicate phosphor

    International Nuclear Information System (INIS)

    Zhang, Jilin; Zhang, Weilu; Qiu, Zhongxian; Zhou, Wenli; Yu, Liping; Li, Zhiqiang; Lian, Shixun

    2015-01-01

    High quantum efficiency is a vital parameter of phosphors for practical application. An efficient near-UV and blue emitting phosphor Li 4 SrCa(SiO 4 ) 2 :Ce 3+ was synthesized by a traditional solid-state reaction, and luminescent properties were studied in detail. The Ce 3+ -activated phosphor can emit both a near-UV light centred at 345 nm and a blue light peaking at 420 nm when Ce 3+ occupies the Sr and Ca site, respectively. The internal quantum efficiency (IQE) of Li 4 SrCa(SiO 4 ) 2 :0.03Ce 3+ is as high as 97% under the excitation at 288 nm, while the external quantum efficiency (EQE) is 66%. The IQE and EQE values of Li 4 SrCa(SiO 4 ) 2 :0.03Ce 3+ under the excitation at 360 nm are 82% and 31%, respectively. - Highlights: • Phosphor Li 4 SrCa(SiO 4 ) 2 :Ce 3+ emits a near-UV (345 nm) and a blue light (420 nm). • Emission band at 345 nm originates from Ce 3+ on Sr site. • Emission band at 420 nm belongs to Ce 3+ on Ca site. • Internal quantum efficiency is 97% for Li 4 SrCa(SiO 4 ) 2 :0.03Ce 3+ excited at 288 nm

  5. Oxycarbonitride phosphors and light emitting devices using the same

    Science.gov (United States)

    Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

    2013-10-08

    Disclosed herein is a novel family of oxycarbidonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbidonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

  6. Highly Simplified Reddish Orange Phosphorescent Organic Light-Emitting Diodes Incorporating a Novel Carrier- and Exciton-Confining Spiro-Exciplex-Forming Host for Reduced Efficiency Roll-off.

    Science.gov (United States)

    Xu, Ting; Zhang, Ye-Xin; Wang, Bo; Huang, Chen-Chao; Murtaza, Imran; Meng, Hong; Liao, Liang-Sheng

    2017-01-25

    A novel exciplex-forming host is applied so as to design highly simplified reddish orange light-emitting diodes (OLEDs) with low driving voltage, high efficiency, and an extraordinarily low efficiency roll-off, by combining N,N-10-triphenyl-10H-spiro [acridine-9,9'-fluoren]-3'-amine (SAFDPA) with 4,7-diphenyl-1,10-phenanthroline (Bphen) doped with trivalent iridium complex bis(2-methyldibenzo[f,h]quinoxaline) (acetylacetonate)iridium(III) (Ir(MDQ) 2 (acac)). The reddish orange OLEDs achieve a strikingly high power efficiency (PE) of 31.80 lm/W with an ultralow threshold voltage of 2.24 V which is almost equal to the triplet energy level of the phosphorescent reddish orange emitting dopant. The power efficiency of the device with the exciplex-forming host is enhanced, achieving 36.2% mainly owing to the lower operating voltage by the novel exciplex forming cohost, compared with the reference device (23.54 lm/W). Moreover, the OLEDs show extraordinarily low current efficiency (CE) roll-off to 1.41% at the brightness from 500 to 5000 cd/m 2 with a maximal CE of 32.87 cd/A (EQE max = 11.01%). The devices display a good reddish orange color (CIE of (0.628, 0.372) at 500 cd/m 2 ) nearly without color shift with increasing brightness. Co-host architecture phosphorescent OLEDs show a simpler device structure, lower working voltage, and a better efficiency and stability than those of the reference devices without the cohost architecture, which helps to simplify the OLED structure, lower the cost, and popularize OLED technology.

  7. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Chiao-Wen Yeh

    2010-03-01

    Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

  8. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    Science.gov (United States)

    Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

    2010-01-01

    White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

  9. Optical modelling of photoluminescence emitted by thin doped films

    International Nuclear Information System (INIS)

    Pigeat, P.; Easwarakhanthan, T.; Briancon, J.L.; Rinnert, H.

    2011-01-01

    Photoluminescence (PL) spectra emitted by doped films are deformed owing to film thickness-dependent wave interference. This hampers knowing well their PL generating mechanisms as well as designing photonic devices with suitable geometries that improve their PL efficiency. We develop in this paper an energy model for PL emitted by doped films considering the interaction between the wavelength-differing incident standing and emitted waves, their energy transfer in-between, and the interferences undergone by both. The film optical constants are estimated fitting the model to the measured PL. This simple model has thus allowed us to interpret the evolution of PL emitted by Er-doped AlN films prepared on Si substrates by reactive magnetron sputtering. The shapes, the amplitudes, and the illusive sub-spectral features of the PL spectra depend essentially on the film thickness. The model further predicts high sensitivity for PL emitted by non-homogenously doped stacked-films to incident light wavelengths and film-thickness variations. This property has potential applications in tracking wavelength variations and in measuring physical quantities producing thickness variations. This model may be used to optimise PL efficiency of photonic devices through different film geometries and optical properties.

  10. Colloidal quantum dot light-emitting devices

    Directory of Open Access Journals (Sweden)

    Vanessa Wood

    2010-07-01

    Full Text Available Colloidal quantum dot light-emitting devices (QD-LEDs have generated considerable interest for applications such as thin film displays with improved color saturation and white lighting with a high color rendering index (CRI. We review the key advantages of using quantum dots (QDs in display and lighting applications, including their color purity, solution processability, and stability. After highlighting the main developments in QD-LED technology in the past 15 years, we describe the three mechanisms for exciting QDs – optical excitation, Förster energy transfer, and direct charge injection – that have been leveraged to create QD-LEDs. We outline the challenges facing QD-LED development, such as QD charging and QD luminescence quenching in QD thin films. We describe how optical downconversion schemes have enabled researchers to overcome these challenges and develop commercial lighting products that incorporate QDs to achieve desirable color temperature and a high CRI while maintaining efficiencies comparable to inorganic white LEDs (>65 lumens per Watt. We conclude by discussing some current directions in QD research that focus on achieving higher efficiency and air-stable QD-LEDs using electrical excitation of the luminescent QDs.

  11. Influence of 2 MeV electrons irradiation on gallium phosphide light-emitting diodes reverse currents

    Directory of Open Access Journals (Sweden)

    V. G. Vorobiov

    2015-10-01

    Full Text Available Results of reverse electrophysical characteristics study of red and green LEDs, initial and irradiated with 2 MeV electrons were given. It was found that reverse current was predominantly caused by carriers tunneling at Urev ≤ 9 V, and by the avalanche multiplication at Urev ≥ 13 V, in the range U = 9 ÷ 13 V both mechanisms are available. Current increase at high voltage areas (Urev > 19 V is limited by the base resistance of diode. In the case of significant reverse currents (I > 1 mA irradiation of diodes leads to the shift of reverse current-voltage characteristics into the high voltages direction.

  12. White top emitting OLED with angle independent emission characteristic

    Energy Technology Data Exchange (ETDEWEB)

    Thomschke, Michael; Freitag, Patricia; Schwartz, Gregor; Nitsche, Robert; Walzer, Karsten; Leo, Karl [Technische Universitaet Dresden, Institut fuer Angewandte Photophysik, Georg-Baehr-Strasse 1, 01062 Dresden (Germany)

    2008-07-01

    The general device structure of a top emitting organic light emitting diode (OLED) consists of several organic layers sandwiched in between two metal contacts, with the top one being semitransparent for light outcoupling reasons. Due to the high reflectivity of the electrodes, strong microcavity effects occur which lead to a preferred emission of light of a certain wavelength with main outcoupling in forward direction. This creates rather narrow emission bands, accompanied by strong spectral shifts upon viewing angle variation. By using an organic capping layer on top of the semitransparent metal contact, this unwanted effect can be reduced. This is important especially for white light emission for the use of OLEDs in future lighting applications. Our optical simulations show that the strong angular dependence of the emission color almost vanishes. To verify the simulations we study white top emitting OLEDs based on an approach which are adapted to the top emitting case.

  13. Blue-light emitting triazolopyridinium and triazoloquinolinium salts

    KAUST Repository

    Carboni, Valentina; Su, Xin; Qian, Hai; Aprahamian, Ivan; Credi, Alberto

    2017-01-01

    Compounds that emit blue light are of interest for applications that include optoelectronic devices and chemo/biosensing and imaging. The design and synthesis of small organic molecules that can act as high-efficiency deep-blue-light emitters

  14. Specification of optical components for a high average-power laser environment

    Energy Technology Data Exchange (ETDEWEB)

    Taylor, J.R.; Chow, R.; Rinmdahl, K.A.; Willis, J.B.; Wong, J.N.

    1997-06-25

    Optical component specifications for the high-average-power lasers and transport system used in the Atomic Vapor Laser Isotope Separation (AVLIS) plant must address demanding system performance requirements. The need for high performance optics has to be balanced against the practical desire to reduce the supply risks of cost and schedule. This is addressed in optical system design, careful planning with the optical industry, demonstration of plant quality parts, qualification of optical suppliers and processes, comprehensive procedures for evaluation and test, and a plan for corrective action.

  15. Design of high current bunching system and high power fast Faraday cup for high current LEBT at VECC

    International Nuclear Information System (INIS)

    Anuraag Misra, A.; Pandit, B.V.S.; Gautam Pal, C.

    2011-01-01

    A high current microwave ion source as described is currently operational at VECC. We are able to optimize 6.4 mA of proton current in the LEBT line of ion source. The cyclotron type of accelerators accept only a fraction of DC ion beam coming from ion source so a ion beam buncher is needed to increase the accepted current into the cyclotron. The buncher described in this paper is unique in its kind as it has to handle high beam loading power upto 400 W as it is designed to bunch few mA of proton beam currents at 80 keV beam energy. A sinusoidal quarter wave RF structure has been chosen to bunch the high current beam due to high Q achievable in comparison with other configurations. This buncher has been designed using CST Microwave studio 3D advanced code since the design frequency of our buncher is 42 MHz, we have provided the RF and vacuum window near the drift tube of buncher to avoid vacuum and multipacting problems and to keep maximum volume in air region. There is a provision of multipacting interlocks to shut off amplifier during multipacting. We have carried out a detailed electromagnetic and thermal design of the buncher in CST Microwave studio and simulated values of unloaded Q was calculated be 4000. We have estimated a power of 400 W to achieve gap (designed) voltage of 10 kV. This buncher is in advanced stage of fabrication. A high power fast Faraday cup is also designed to characterize the above mentioned high current bunching system. The fast Faraday cup is designed in 50 Ω coaxial geometry to transmit fast pulse of bunched ion beam. The design of Faraday cup was completed using ANSYS HFSS and a bandwidth of 1.75 GHz was achieved this faraday cup design was different from conventional Faraday cup design as we have designed the support and cooling lines at such a place on Faraday cup which do not disturb the electrical impedance of the cup. (author)

  16. Advanced power flow technologies for high current ICF accelerators

    International Nuclear Information System (INIS)

    VanDevender, J.P.; McDaniel, D.H.

    1978-01-01

    Two new technologies for raising the power density in high current, inertial confinement fusion accelerators have been developed in the past two years. Magnetic flashover inhibition utilizes the self-magnetic fields around the vacuum insulator surface to inhibit surface flashover; average electric fields of 40 Mv/m at magnetic fields of 1.1 T have been achieved. Self-magnetic insulation of long, vacuum transmission lines has been used to transport power at 1.6 x 10 14 W/m 2 over six meters and up to 1.6 x 10 15 W/m 2 over short distances in a radial anode-cathode feed. The recent data relevant to these new technologies and their implications for ICF will be explored

  17. Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

    Science.gov (United States)

    Nie, Qu-yang; Zhang, Fang-hui

    2018-05-01

    The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

  18. Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display

    KAUST Repository

    Zou, Jianping; Zhang, Kang; Li, Jingqi; Zhao, Yongbiao; Wang, Yilei; Pillai, Suresh Kumar Raman; Volkan Demir, Hilmi; Sun, Xiaowei; Chan-Park, Mary B.; Zhang, Qing

    2015-01-01

    Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm2V−1s−1 and the high channel current on/off ratio of ~105 of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays.

  19. Carbon Nanotube Driver Circuit for 6 × 6 Organic Light Emitting Diode Display

    KAUST Repository

    Zou, Jianping

    2015-06-29

    Single-walled carbon nanotube (SWNT) is expected to be a very promising material for flexible and transparent driver circuits for active matrix organic light emitting diode (AM OLED) displays due to its high field-effect mobility, excellent current carrying capacity, optical transparency and mechanical flexibility. Although there have been several publications about SWNT driver circuits, none of them have shown static and dynamic images with the AM OLED displays. Here we report on the first successful chemical vapor deposition (CVD)-grown SWNT network thin film transistor (TFT) driver circuits for static and dynamic AM OLED displays with 6 × 6 pixels. The high device mobility of ~45 cm2V−1s−1 and the high channel current on/off ratio of ~105 of the SWNT-TFTs fully guarantee the control capability to the OLED pixels. Our results suggest that SWNT-TFTs are promising backplane building blocks for future OLED displays.

  20. Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

    DEFF Research Database (Denmark)

    Larsson, David; Greve, Anders; Hvam, Jørn Märcher

    2009-01-01

    We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power...... and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was 60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed....

  1. Combination of carbon dot and polymer dot phosphors for white light-emitting diodes.

    Science.gov (United States)

    Sun, Chun; Zhang, Yu; Sun, Kai; Reckmeier, Claas; Zhang, Tieqiang; Zhang, XiaoYu; Zhao, Jun; Wu, Changfeng; Yu, William W; Rogach, Andrey L

    2015-07-28

    We realized white light-emitting diodes with high color rendering index (85-96) and widely variable color temperatures (2805-7786 K) by combining three phosphors based on carbon dots and polymer dots, whose solid-state photoluminescence self-quenching was efficiently suppressed within a polyvinyl pyrrolidone matrix. All three phosphors exhibited dominant absorption in the UV spectral region, which ensured the weak reabsorption and no energy transfer crosstalk. The WLEDs showed excellent color stability against the increasing current because of the similar response of the tricolor phosphors to the UV light variation.

  2. Bigger, Brighter, Bluer-Better?Current light-emitting devices- adverse sleep properties and preventative strategies.

    Directory of Open Access Journals (Sweden)

    Paul eGringras

    2015-10-01

    Full Text Available ObjectiveIn an effort to enhance the efficiency, brightness and contrast of light-emitting (LE devices during the day, displays often generate substantial short-wavelength (blue-enriched light emissions that can adversely affect sleep. We set out to verify the extent of such short-wavelength emissions, produced by a tablet (iPad Air, e-reader (Kindle Paperwhite 1st generation and smartphone (iPhone 5s and to determine the impact of strategies designed to reduce these light emissions. SettingUniversity of Surrey dedicated chronobiology facility.MethodsFirstly, the spectral power of all the light-emitting (LE devices was assessed when displaying identical text. Secondly, we compared the text output with that of ‘Angry Birds’-a popular top 100 ‘App Store’ game. Finally we measured the impact of two strategies that attempt to reduce the output of short-wavelength light emissions. The first strategy employed an inexpensive commercially available pair of orange-tinted ‘blue-blocking’ glasses. The second tested an app designed to be ‘sleep-aware’ whose designers deliberately attempted to reduce blue-enriched light emissions.ResultsAll the LE devices shared very similar enhanced blue-light peaks when displaying text. This included the output from the backlit Kindle Paperwhite device. The spectra when comparing text to the Angry Birds game were also very similar, although the

  3. Motor current signature analysis for gearbox condition monitoring under transient speeds using wavelet analysis and dual-level time synchronous averaging

    Science.gov (United States)

    Bravo-Imaz, Inaki; Davari Ardakani, Hossein; Liu, Zongchang; García-Arribas, Alfredo; Arnaiz, Aitor; Lee, Jay

    2017-09-01

    This paper focuses on analyzing motor current signature for fault diagnosis of gearboxes operating under transient speed regimes. Two different strategies are evaluated, extensively tested and compared to analyze the motor current signature in order to implement a condition monitoring system for gearboxes in industrial machinery. A specially designed test bench is used, thoroughly monitored to fully characterize the experiments, in which gears in different health status are tested. The measured signals are analyzed using discrete wavelet decomposition, in different decomposition levels using a range of mother wavelets. Moreover, a dual-level time synchronous averaging analysis is performed on the same signal to compare the performance of the two methods. From both analyses, the relevant features of the signals are extracted and cataloged using a self-organizing map, which allows for an easy detection and classification of the diverse health states of the gears. The results demonstrate the effectiveness of both methods for diagnosing gearbox faults. A slightly better performance was observed for dual-level time synchronous averaging method. Based on the obtained results, the proposed methods can used as effective and reliable condition monitoring procedures for gearbox condition monitoring using only motor current signature.

  4. Energy stability in a high average power FEL

    International Nuclear Information System (INIS)

    Mermings, L.; Bisognano, J.; Delayen, J.

    1995-01-01

    Recirculating, energy-recovering linacs can be used as driver accelerators for high power FELs. Instabilities which arise from fluctuations of the cavity fields or beam current are investigated. Energy changes can cause beam loss on apertures, or, when coupled to M, phase oscillations. Both effects change the beam induced voltage in the cavities and can lead to unstable variations of the accelerating field. Stability analysis for small perturbations from equilibrium is performed and threshold currents are determined. Furthermore, the analytical model is extended to include feedback. Comparison with simulation results derived from direct integration of the equations of motion is presented. Design strategies to increase the instability threshold are discussed and the UV Demo FEL, proposed for construction at CEBAF, and the INP Recuperatron at Novosibirsk are used as examples

  5. Quasar Elemental Abundances at High Redshifts

    DEFF Research Database (Denmark)

    Dietrich, M.; Hamann, F.; Shields, J. C.

    2003-01-01

    the framework of the most recent photoionization models to estimate the metallicity of the gas associated with the high-z quasars. Standard photoionization parameters and the assumption of secondary nitrogen enrichment indicate an average abundance of Z/Z_sol = 4 to 5 in the line emitting gas. Assuming a time...

  6. High current density ion source

    International Nuclear Information System (INIS)

    King, H.J.

    1977-01-01

    A high-current-density ion source with high total current is achieved by individually directing the beamlets from an electron bombardment ion source through screen and accelerator electrodes. The openings in these screen and accelerator electrodes are oriented and positioned to direct the individual beamlets substantially toward a focus point. 3 figures, 1 table

  7. Potential of high-average-power solid state lasers

    International Nuclear Information System (INIS)

    Emmett, J.L.; Krupke, W.F.; Sooy, W.R.

    1984-01-01

    We discuss the possibility of extending solid state laser technology to high average power and of improving the efficiency of such lasers sufficiently to make them reasonable candidates for a number of demanding applications. A variety of new design concepts, materials, and techniques have emerged over the past decade that, collectively, suggest that the traditional technical limitations on power (a few hundred watts or less) and efficiency (less than 1%) can be removed. The core idea is configuring the laser medium in relatively thin, large-area plates, rather than using the traditional low-aspect-ratio rods or blocks. This presents a large surface area for cooling, and assures that deposited heat is relatively close to a cooled surface. It also minimizes the laser volume distorted by edge effects. The feasibility of such configurations is supported by recent developments in materials, fabrication processes, and optical pumps. Two types of lasers can, in principle, utilize this sheet-like gain configuration in such a way that phase and gain profiles are uniformly sampled and, to first order, yield high-quality (undistorted) beams. The zig-zag laser does this with a single plate, and should be capable of power levels up to several kilowatts. The disk laser is designed around a large number of plates, and should be capable of scaling to arbitrarily high power levels

  8. A Review on Experimental Measurements for Understanding Efficiency Droop in InGaN-Based Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Lai Wang

    2017-10-01

    Full Text Available Efficiency droop in GaN-based light emitting diodes (LEDs under high injection current density perplexes the development of high-power solid-state lighting. Although the relevant study has lasted for about 10 years, its mechanism is still not thoroughly clear, and consequently its solution is also unsatisfactory up to now. Some emerging applications, e.g., high-speed visible light communication, requiring LED working under extremely high current density, makes the influence of efficiency droop become more serious. This paper reviews the experimental measurements on LED to explain the origins of droop in recent years, especially some new results reported after 2013. Particularly, the carrier lifetime of LED is analyzed intensively and its effects on LED droop behaviors are uncovered. Finally, possible solutions to overcome LED droop are discussed.

  9. An anode with aluminum doped on zinc oxide thin films for organic light emitting devices

    International Nuclear Information System (INIS)

    Xu Denghui; Deng Zhenbo; Xu Ying; Xiao Jing; Liang Chunjun; Pei Zhiliang; Sun Chao

    2005-01-01

    Doped zinc oxides are attractive alternative materials as transparent conducting electrode because they are nontoxic and inexpensive compared with indium tin oxide (ITO). Transparent conducting aluminum-doped zinc oxide (AZO) thin films have been deposited on glass substrates by DC reactive magnetron sputtering method. Films were deposited at a substrate temperature of 150-bar o C in 0.03 Pa of oxygen pressure. The electrical and optical properties of the film with the Al-doping amount of 2 wt% in the target were investigated. For the 300-nm thick AZO film deposited using a ZnO target with an Al content of 2 wt%, the lowest electrical resistivity was 4x10 -4 Ωcm and the average transmission in the visible range 400-700 nm was more than 90%. The AZO film was used as an anode contact to fabricate organic light-emitting diodes. The device performance was measured and the current efficiency of 2.9 cd/A was measured at a current density of 100 mA/cm 2

  10. Degradation in organic light emitting devices

    Science.gov (United States)

    Dinh, Vincent Vinh

    This thesis is about the fundamental causes of degradation in tris(8-Hydroxyquinoline) Aluminum (Alq3)-based organic light emitting diodes (OLEDs). Degradation typically occurs when a current is forced through an insulating material. Since the insulator does not support conduction waves (in its ground state), chemical restructuring must occur to accommodate the current. OLEDs have many technical advantages over the well known semiconductor-based light emitting diodes (LEDs). OLEDs have quantum efficiencies ˜1% (˜10 times higher than the LEDs), and operational power thresholds ˜.05mW (˜100 lower than the LEDs). OLEDs are preferred in power limited and portable devices; devices such as laptops and displays consume ˜1/4 of the supplied power---any power saving is significant. Other advantages, like better compliance to curved surfaces and ease of fabrication, give the OLEDs an even greater edge over the LEDs. OLEDs must have at least comparable or better lifetimes to remain attractive. Typical OLEDs last several 100hrs compared to the several 1000hrs for the LEDs. For reliable OLED application, it is necessary to understand the above breakdown mechanism. In this thesis, we attempt to understand the breakdown by looking at how OLEDs are made, how they work, and when they don't. In the opening sections, we give an overview of OLEDs and LEDs, especially how sustained luminescence is achieved through current circulation. Then in Chapter 2, we look at the basic components in the OLEDs. In Chapter 3 we look at how a hole material (like poly-vinyl carbazole or PVK) establishes an excitonic environment for the sustained luminescence in Alq3. We then approximate how potential is distributed when a simple luminescence system is in operation. In Chapter 4, we look at ways of measuring this distribution via the OLED impedance. Finally in Chapter 5, we look at the OLED stability under light emission conditions via PVK and Alq3 photoemission and photoabsorption spectra

  11. Amplified spontaneous emission and thermal management on a high average-power diode-pumped solid-state laser - the Lucia laser system

    International Nuclear Information System (INIS)

    Albach, D.

    2010-01-01

    The development of the laser triggered the birth of numerous fields in both scientific and industrial domains. High intensity laser pulses are a unique tool for light/matter interaction studies and applications. However, current flash-pumped glass-based systems are inherently limited in repetition-rate and efficiency. Development within recent years in the field of semiconductor lasers and gain media drew special attention to a new class of lasers, the so-called Diode Pumped Solid State Laser (DPSSL). DPSSLs are highly efficient lasers and are candidates of choice for compact, high average-power systems required for industrial applications but also as high-power pump sources for ultra-high intense lasers. The work described in this thesis takes place in the context of the 1 kilowatt average-power DPSSL program Lucia, currently under construction at the 'Laboratoire d'Utilisation des Laser Intenses' (LULI) at the Ecole Polytechnique, France. Generation of sub-10 nanosecond long pulses with energies of up to 100 joules at repetition rates of 10 hertz are mainly limited by Amplified Spontaneous Emission (ASE) and thermal effects. These limitations are the central themes of this work. Their impact is discussed within the context of a first Lucia milestone, set around 10 joules. The developed laser system is shown in detail from the oscillator level to the end of the amplification line. A comprehensive discussion of the impact of ASE and thermal effects is completed by related experimental benchmarks. The validated models are used to predict the performances of the laser system, finally resulting in a first activation of the laser system at an energy level of 7 joules in a single-shot regime and 6.6 joules at repetition rates up to 2 hertz. Limitations and further scaling approaches are discussed, followed by an outlook for the further development. (author) [fr

  12. A high speed digital signal averager for pulsed NMR

    International Nuclear Information System (INIS)

    Srinivasan, R.; Ramakrishna, J.; Ra agopalan, S.R.

    1978-01-01

    A 256-channel digital signal averager suitable for pulsed nuclear magnetic resonance spectroscopy is described. It implements 'stable averaging' algorithm and hence provides a calibrated display of the average signal at all times during the averaging process on a CRT. It has a maximum sampling rate of 2.5 μ sec and a memory capacity of 256 x 12 bit words. Number of sweeps is selectable through a front panel control in binary steps from 2 3 to 2 12 . The enhanced signal can be displayed either on a CRT or by a 3.5-digit LED display. The maximum S/N improvement that can be achieved with this instrument is 36 dB. (auth.)

  13. Recent developments in high average power driver technology

    International Nuclear Information System (INIS)

    Prestwich, K.R.; Buttram, M.T.; Rohwein, G.J.

    1979-01-01

    Inertial confinement fusion (ICF) reactors will require driver systems operating with tens to hundreds of megawatts of average power. The pulse power technology that will be required to build such drivers is in a primitive state of development. Recent developments in repetitive pulse power are discussed. A high-voltage transformer has been developed and operated at 3 MV in a single pulse experiment and is being tested at 1.5 MV, 5 kj and 10 pps. A low-loss, 1 MV, 10 kj, 10 pps Marx generator is being tested. Test results from gas-dynamic spark gaps that operate both in the 100 kV and 700 kV range are reported. A 250 kV, 1.5 kA/cm 2 , 30 ns electron beam diode has operated stably for 1.6 x 10 5 pulses

  14. Hygroscopic properties of smoke-generated organic aerosol particles emitted in the marine atmosphere

    Directory of Open Access Journals (Sweden)

    A. Wonaschütz

    2013-10-01

    Full Text Available During the Eastern Pacific Emitted Aerosol Cloud Experiment (E-PEACE, a plume of organic aerosol was produced by a smoke generator and emitted into the marine atmosphere from aboard the R/V Point Sur. In this study, the hygroscopic properties and the chemical composition of the plume were studied at plume ages between 0 and 4 h in different meteorological conditions. In sunny conditions, the plume particles had very low hygroscopic growth factors (GFs: between 1.05 and 1.09 for 30 nm and between 1.02 and 1.1 for 150 nm dry size at a relative humidity (RH of 92%, contrasted by an average marine background GF of 1.6. New particles were produced in large quantities (several 10 000 cm−3, which lead to substantially increased cloud condensation nuclei (CCN concentrations at supersaturations between 0.07 and 0.88%. Ratios of oxygen to carbon (O : C and water-soluble organic mass (WSOM increased with plume age: from −3, respectively, while organic mass fractions decreased slightly (~ 0.97 to ~ 0.94. High-resolution aerosol mass spectrometer (AMS spectra show that the organic fragment m/z 43 was dominated by C2H3O+ in the small, new particle mode and by C3H7+ in the large particle mode. In the marine background aerosol, GFs for 150 nm particles at 40% RH were found to be enhanced at higher organic mass fractions: an average GF of 1.06 was observed for aerosols with an organic mass fraction of 0.53, and a GF of 1.04 for an organic mass fraction of 0.35.

  15. Passivation of organic light emitting diode anode grid lines by pulsed Joule heating

    NARCIS (Netherlands)

    Janka, M.; Gierth, R.; Rubingh, J.E.; Abendroth, M.; Eggert, M.; Moet, D.J.D.; Lupo, D.

    2015-01-01

    We report the self-aligned passivation of a current distribution grid for an organic light emitting diode (OLED) anode using a pulsed Joule heating method to align the passivation layer accurately on the metal grid. This method involves passing an electric current through the grid to cure a polymer

  16. Beam physics design strategy for a high-current rf linac

    Energy Technology Data Exchange (ETDEWEB)

    Reiser, M. [Univ. of Maryland, College Park, MD (United States)

    1995-10-01

    The high average beam power of an rf linac system for transmutation of nuclear waste puts very stringent requirements on beam quality and beam control. Fractional beam losses along the accelerator must be kept at extremely low levels to assure {open_quotes}hands-on{close_quotes} maintenance. Hence, halo formation and large-amplitude tails in the particle distribution due to beam mismatch and equipartitioning effects must be avoided. This implies that the beam should ideally be in near-perfect thermal equilibrium from injection to full energy - in contrast to existing rf linacs in which the transverse temperature, T {sub {perpendicular}}, is higher than the longitudinal temperature, T{sub {parallel}}. The physics and parameter scaling for such a system will be reviewed using the results of recent work on high-intensity bunched beams. A design strategy for a high-current rf linac with equilibrated beam will be proposed.

  17. MADNIX a code to calculate prompt fission neutron spectra and average prompt neutron multiplicities

    International Nuclear Information System (INIS)

    Merchant, A.C.

    1986-03-01

    A code has been written and tested on the CDC Cyber-170 to calculate the prompt fission neutron spectrum, N(E), as a function of both the fissioning nucleus and its excitation energy. In this note a brief description of the underlying physical principles involved and a detailed explanation of the required input data (together with a sample output for the fission of 235 U induced by 14 MeV neutrons) are presented. Weisskopf's standard nuclear evaporation theory provides the basis for the calculation. Two important refinements are that the distribution of fission-fragment residual nuclear temperature and the cooling of the fragments as neutrons are emitted approximately taken into account, and also the energy dependence of the cross section for the inverse process of compound nucleus formation is included. This approach is then used to calculate the average number of prompt neutrons emitted per fission, v-bar p . At high excitation energies, where fission is still possible after neutron emission, the consequences of the competition between first, second and third chance fission on N(E) and v-bar p are calculated. Excellent agreement with all the examples given in the original work of Madland and Nix is obtained. (author) [pt

  18. Radiation emitting devices act

    International Nuclear Information System (INIS)

    1970-01-01

    This Act, entitled the Radiation Emitting Devices Act, is concerned with the sale and importation of radiation emitting devices. Laws relating to the sale, lease or import, labelling, advertising, packaging, safety standards and inspection of these devices are listed as well as penalties for any person who is convicted of breaking these laws

  19. Lead-free/rare earth-free Green-light-emitting crystal based on organic-inorganic hybrid [(C10H16N)2][MnBr4] with high emissive quantum yields and large crystal size

    Science.gov (United States)

    Cai, Xing-Wei; Zhao, Yu-Yuan; Li, Hong; Huang, Cui-Ping; Zhou, Zhen

    2018-06-01

    With the flourishing development of emitting materials, tremendous technological progress has been accomplished. However, they still face great challenges in convenient economical environmental-friendly large-scale commercial production. Herein we designed this organic-inorganic hybrid lead-free compound, an emerging class of high-efficiency emitting materials, [(C10H16N)2][MnBr4] (1), which emits intense greenish photoluminescence with a high emissive quantum yields of 72.26%, was prepared through the convenient economical solution method. What's more, compared with rare earth fluorescent materials (especially green-emitting Tb), Mn material is rich in natural resources and low commercial cost, which would possess an increasingly predominant advantage in the preparation of luminescent materials. Additionally, the exceptional thermal stability as well as the low-cost/convenient preparation process makes crystal 1 with the large size of more than 1 cm to be an ideal technologically important green-emitting material and it would open up a new route towards the commercialization process of lead-free/rare earth-free hybrid emitting materials in display and sensing.

  20. Pyridine substituted spirofluorene derivative as an electron transport material for high efficiency in blue organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Soon Ok; Yook, Kyoung Soo; Lee, Jun Yeob, E-mail: leej17@dankook.ac.k

    2010-11-01

    The quantum efficiency of blue fluorescent organic light-emitting diodes was enhanced by 20% using a pyridine substituted spirofluorene-benzofluorene derivative as an electron transport material. 2',7'-Di(pyridin-3-yl)spiro[benzofluorene-7,9'-fluorene] (SPBP) was synthesized and it was used as the electron transport material to block the hole leakage from the emitting layer. The improvement of the quantum efficiency and power efficiency of the blue fluorescent organic light-emitting diodes using the SPBP was investigated.

  1. Production of poinsettia (Euphorbia Pulcherrima) with light emitting diodes compared with the traditional high pressure sodium lamp

    OpenAIRE

    Thapa, Sabir

    2017-01-01

    Use of chemical are commonly used as tools for the commercial pot plant producers to grow strong, dwarfed, and compact plants. Although, these growth regulators have adverse effects on human health and the environment. So, this issue has motivated researchers to search for alternative methods for growth regulation. The aim of this study was to test light emitting diodes (LEDs) with different light qualities alone or in combination with high pressure sodium lamps (HPSs), to investigate their e...

  2. Design of a high average-power FEL driven by an existing 20 MV electrostatic-accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Kimel, I.; Elias, L.R. [Univ. of Central Florida, Orlando, FL (United States)

    1995-12-31

    There are some important applications where high average-power radiation is required. Two examples are industrial machining and space power-beaming. Unfortunately, up to date no FEL has been able to show more than 10 Watts of average power. To remedy this situation we started a program geared towards the development of high average-power FELs. As a first step we are building in our CREOL laboratory, a compact FEL which will generate close to 1 kW in CW operation. As the next step we are also engaged in the design of a much higher average-power system based on a 20 MV electrostatic accelerator. This FEL will be capable of operating CW with a power output of 60 kW. The idea is to perform a high power demonstration using the existing 20 MV electrostatic accelerator at the Tandar facility in Buenos Aires. This machine has been dedicated to accelerate heavy ions for experiments and applications in nuclear and atomic physics. The necessary adaptations required to utilize the machine to accelerate electrons will be described. An important aspect of the design of the 20 MV system, is the electron beam optics through almost 30 meters of accelerating and decelerating tubes as well as the undulator. Of equal importance is a careful design of the long resonator with mirrors able to withstand high power loading with proper heat dissipation features.

  3. Edge and defect luminescence of powerful ultraviolet InGaN/GaN light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A. [Novosibirsk State Technical University (Russian Federation); Shamirzaev, T. S. [Russian Academy of Science, Siberian Branch, Rzhanov Institute of Semiconductor Physics (Russian Federation)

    2016-11-15

    The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensity but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.

  4. Square pulse current wave’s effect on electroplated nickel hardness

    Directory of Open Access Journals (Sweden)

    Bibian Alonso Hoyos

    2006-09-01

    Full Text Available The effects of frequency, average current density and duty cycle on the hardness of electroplated nickel were studied in Watts and sulphamate solutions by means of direct and square pulse current. The results in Watts’ solutions revealed greater hardness at low duty cycle, high average current density and high square pulse current frequency. There was little variation in hardness in nickel sulphamate solutions to changes in duty cycle and wave frequency. Hardness values obtained in the Watts’ bath with square pulse current were higher than those achieved with direct current at the same average current density; such difference was not significant in sulphamate bath treatment.

  5. Design and algorithm research of high precision airborne infrared touch screen

    Science.gov (United States)

    Zhang, Xiao-Bing; Wang, Shuang-Jie; Fu, Yan; Chen, Zhao-Quan

    2016-10-01

    There are shortcomings of low precision, touch shaking, and sharp decrease of touch precision when emitting and receiving tubes are failure in the infrared touch screen. A high precision positioning algorithm based on extended axis is proposed to solve these problems. First, the unimpeded state of the beam between emitting and receiving tubes is recorded as 0, while the impeded state is recorded as 1. Then, the method of oblique scan is used, in which the light of one emitting tube is used for five receiving tubes. The impeded information of all emitting and receiving tubes is collected as matrix. Finally, according to the method of arithmetic average, the position of the touch object is calculated. The extended axis positioning algorithm is characteristic of high precision in case of failure of individual infrared tube and affects slightly the precision. The experimental result shows that the 90% display area of the touch error is less than 0.25D, where D is the distance between adjacent emitting tubes. The conclusion is gained that the algorithm based on extended axis has advantages of high precision, little impact when individual infrared tube is failure, and using easily.

  6. High-density plasma-induced etch damage of wafer-bonded AlGaInP/mirror/Si light-emitting diodes

    CERN Document Server

    Wuu, D S; Huang, S H; Chung, C R

    2002-01-01

    Dry etch of wafer-bonded AlGaInP/mirror/Si light-emitting diodes (LEDs) with planar electrodes was performed by high-density plasma using an inductively coupled plasma (ICP) etcher. The etching characteristics were investigated by varying process parameters such as Cl sub 2 /N sub 2 gas combination, chamber pressure, ICP power and substrate-bias power. The corresponding plasma properties (ion flux and dc bias), in situ measured by a Langmuir probe, show a strong relationship to the etch results. With a moderate etch rate of 1.3 mu m/min, a near vertical and smooth sidewall profile can be achieved under a Cl sub 2 /(Cl sub 2 +N sub 2) gas mixture of 0.5, ICP power of 800 W, substrate-bias power of 100 W, and chamber pressure of 0.67 Pa. Quantitative analysis of the plasma-induced damage was attempted to provide a means to study the mechanism of leakage current and brightness with various dc bias voltages (-110 to -328 V) and plasma duration (3-5 min) on the wafer-bonded LEDs. It is found that the reverse leaka...

  7. [1,2,4]Triazolo[1,5-a]pyridine as Building Blocks for Universal Host Materials for High-Performance Red, Green, Blue and White Phosphorescent Organic Light-Emitting Devices.

    Science.gov (United States)

    Song, Wenxuan; Shi, Lijiang; Gao, Lei; Hu, Peijun; Mu, Haichuan; Xia, Zhenyuan; Huang, Jinhai; Su, Jianhua

    2018-02-14

    The electron-accepting [1,2,4]triazolo[1,5-a]pyridine (TP) moiety was introduced to build bipolar host materials for the first time, and two host materials based on this TP acceptor and carbazole donor, namely, 9,9'-(2-([1,2,4]triazolo[1,5-a]pyridin-2-yl)-1,3-phenylene)bis(9H-carbazole) (o-CzTP) and 9,9'-(5-([1,2,4]triazolo[1,5-a]pyridin-2-yl)-1,3-phenylene)bis(9H-carbazole) (m-CzTP), were designed and synthesized. These two TP-based host materials possess a high triplet energy (>2.9 eV) and appropriate highest occupied molecular orbital/lowest unoccupied molecular orbital levels as well as the bipolar transporting feature, which permits their applicability as universal host materials in multicolor phosphorescent organic light-emitting devices (PhOLEDs). Blue, green, and red PhOLEDs based on o-CzTP and m-CzTP with the same device configuration all show high efficiencies and low efficiency roll-off. The devices hosted by o-CzTP exhibit maximum external quantum efficiencies (η ext ) of 27.1, 25.0, and 15.8% for blue, green, and red light emitting, respectively, which are comparable with the best electroluminescene performance reported for FIrpic-based blue, Ir(ppy) 3 -based green, and Ir(pq) 2 (acac)-based red PhOLEDs equipped with a single-component host. The white PhOLEDs based on the o-CzTP host and three lumophors containing red, green, and blue emitting layers were fabricated with the same device structure, which exhibit a maximum current efficiency and η c of 40.4 cd/A and 17.8%, respectively, with the color rendering index value of 75.

  8. High-precision measurement of tidal current structures using coastal acoustic tomography

    Science.gov (United States)

    Zhang, Chuanzheng; Zhu, Xiao-Hua; Zhu, Ze-Nan; Liu, Wenhu; Zhang, Zhongzhe; Fan, Xiaopeng; Zhao, Ruixiang; Dong, Menghong; Wang, Min

    2017-07-01

    A high-precision coastal acoustic tomography (CAT) experiment for reconstructing the current variation in Dalian Bay (DLB) was successfully conducted by 11 coastal acoustic tomography systems during March 7-8, 2015. The horizontal distributions of tidal currents and residual currents were mapped well by the inverse method, which used reciprocal travel time data along 51 successful sound transmission rays. The semi-diurnal tide is dominant in DLB, with a maximum speed of 0.69 m s-1 at the eastern and southwestern parts near the bay mouth that gradually decreases toward the inner bay with an average velocity of 0.31 m s-1. The residual current enters the observational domain from the two flanks of the bay mouth and flows out in the inner bay. One anticyclone and one cyclone were noted inside DLB as was one cyclone at the bay mouth. The maximum residual current in the observational domain reached 0.11 m s-1, with a mean residual current of 0.03 m s-1. The upper 15-m depth-averaged inverse velocities were in excellent agreement with the moored Acoustic Doppler Current Profiler (ADCP) at the center of the bay, with a root-mean-square difference (RMSD) of 0.04 m s-1 for the eastward and northward components. The precision of the present tomography measurements was the highest thus far owing to the largest number of transmission rays ever recorded. Sensitivity experiments showed that the RMSD between CAT and moored-ADCP increased from 0.04 m s-1 to 0.08 m s-1 for both the eastward and northward velocities when reducing the number of transmission rays from 51 to 11. The observational accuracy was determined by the spatial resolution of acoustic ray in the CAT measurements. The cost-optimal scheme consisted of 29 transmission rays with a spatial resolution of acoustic ray of 2.03 √{ km2 / ray numbers } . Moreover, a dynamic analysis of the residual currents showed that the horizontal pressure gradient of residual sea level and Coriolis force contribute 38.3% and 36

  9. Low-noise and high-speed photodetection system using optical feedback with a current amplification function.

    Science.gov (United States)

    Akiba, M

    2015-09-01

    A photodetection system with an optical-feedback circuit accompanied by current amplification was fabricated to minimize the drawbacks associated with a transimpedance amplifier (TIA) with a very high resistance feedback resistor. Current amplification was implemented by extracting an output light from the same light source that emitted the feedback light. The current gain corresponds to the ratio of the photocurrent created by the output light to that created by the feedback light because the feedback current value is identical to the input photocurrent value generated by an input light to be measured. The current gain has no theoretical limit. The output light was detected by a photodiode with a TIA having a small feedback resistance. The expression for the input-referred noise current of the optical-feedback photodetection system was derived, and the trade-off between sensitivity and response, which is a characteristic of TIA, was found to considerably improve. An optical-feedback photodetection system with an InGaAs pin photodiode was fabricated. The measured noise equivalent power of the system was 1.7 fW/Hz(1/2) at 10 Hz and 1.3 μm, which is consistent with the derived expression. The time response of the system was found to deteriorate with decreasing photocurrent. The 50% rise time for a light pulse input increased from 3.1 μs at a photocurrent of 10 nA to 15 μs at photocurrents below 10 pA. The bandwidth of the input-referred noise current was 7 kHz, which is consistent with rise times below 10 pA.

  10. Using an ultra-thin non-doped orange emission layer to realize high efficiency white organic light-emitting diodes with low efficiency roll-off

    Energy Technology Data Exchange (ETDEWEB)

    Zhu, Liping; Chen, Jiangshan; Ma, Dongge, E-mail: mdg1014@ciac.ac.cn [State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Graduate University of the Chinese Academy of Sciences, Changchun 130022 (China); Zhao, Yongbiao [Luminous Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, Singapore 639798 (Singapore); Zhang, Hongmei [Department of Materials Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)

    2014-06-28

    By adopting an ultra-thin non-doped orange emission layer sandwiched between two blue emission layers, high efficiency white organic light-emitting diodes (WOLEDs) with reduced efficiency roll-off were fabricated. The optimized devices show a balanced white emission with Internationale de L'Eclairage of (0.41, 0.44) at the luminance of 1000 cd/m{sup 2}, and the maximum power efficiency, current efficiency (CE), and external quantum efficiency reach 63.2 lm/W, 59.3 cd/A, and 23.1%, which slightly shift to 53.4 lm/W, 57.1 cd/A, and 22.2% at 1000 cd/m{sup 2}, respectively, showing low efficiency roll-off. Detailed investigations on the recombination zone and the transient electroluminescence (EL) clearly reveal the EL processes of the ultra-thin non-doped orange emission layer in WOLEDs.

  11. Blue-emitting LaSi3N5:Ce3+ fine powder phosphor for UV-converting white light-emitting diodes

    Science.gov (United States)

    Suehiro, Takayuki; Hirosaki, Naoto; Xie, Rong-Jun; Sato, Tsugio

    2009-08-01

    We have synthesized the pure ternary nitride phosphor, LaSi3N5:Ce3+ from the multicomponent oxide system La2O3-CeO2-SiO2, by using the gas-reduction-nitridation method. Highly pure, single-phase LaSi3N5:Ce3+ powders possessing particle sizes of ˜0.4-0.6 μm were obtained with the processing temperature ≤1500 °C. The synthesized LaSi3N5:Ce3+ exhibits tunable blue broadband emission with the dominant wavelength of 464-475 nm and the external quantum efficiency of ˜34%-67% under excitation of 355-380 nm. A high thermal stability of LaSi3N5:Ce3+ compared to the existing La-Si-O-N hosts was demonstrated, indicating the promising applicability as a blue-emitting phosphor for UV-converting white light-emitting diodes.

  12. Semi-analytical wave functions in relativistic average atom model for high-temperature plasmas

    International Nuclear Information System (INIS)

    Guo Yonghui; Duan Yaoyong; Kuai Bin

    2007-01-01

    The semi-analytical method is utilized for solving a relativistic average atom model for high-temperature plasmas. Semi-analytical wave function and the corresponding energy eigenvalue, containing only a numerical factor, are obtained by fitting the potential function in the average atom into hydrogen-like one. The full equations for the model are enumerated, and more attentions are paid upon the detailed procedures including the numerical techniques and computer code design. When the temperature of plasmas is comparatively high, the semi-analytical results agree quite well with those obtained by using a full numerical method for the same model and with those calculated by just a little different physical models, and the result's accuracy and computation efficiency are worthy of note. The drawbacks for this model are also analyzed. (authors)

  13. Modulation of the photoluminescence in carbon dots through surface modification: from mechanism to white light-emitting diodes

    Science.gov (United States)

    Zhu, Jinyang; Shao, He; Bai, Xue; Zhai, Yue; Zhu, Yongsheng; Chen, Xu; Pan, Gencai; Dong, Biao; Xu, Lin; Zhang, Hanzhuang; Song, Hongwei

    2018-06-01

    Carbon dots (CDs) have emerged as a new type of fluorescent material because of their unique optical advantages, such as high photoluminescence quantum yields (QYs), excellent photo-stability, excitation-dependent emissions, and low toxicity. However, the photoluminescence mechanism for CDs remains unclear, which limits their further practical application. Here, CDs were synthesized via a solvothermal route from citric acid and urea. Through the oxidation and reduction treatment of pristine CDs, the origin of the photoluminescence and the involved mechanism were revealed. We found that the blue/green/red emissions originated from three diverse emitting states, i.e. the intrinsic state, and C=O- and C=N-related surface states, respectively. Based on the as-prepared CDs, a pH sensor depending on the radiometric luminescence detection was developed. Furthermore, we constructed CD/PVP (PVP, polyvinylpyrrolidone) composite films, which exhibited white light emission with photoluminescence QYs of 15.3%. The white light emission with different correlated color temperatures (CCTs), from 4807 K to 3319 K, was obtained by simply changing the amount of PVP solution. Benefiting from the white light-emitting solid-state films, single-component white light-emitting diodes were fabricated with an average color rendering index value (Ra) of 80.0, luminous efficiency of 10.2 lm W‑1, and good working stability, thus indicating a promising potential for practical lighting applications.

  14. Expansion of a multicomponent current-carrying plasma jet into vacuum

    International Nuclear Information System (INIS)

    Krasov, V. I.; Paperny, V. L.

    2017-01-01

    An expression for the ion−ion coupling in a multicomponent plasma jet is derived for an arbitrary ratio between the thermal and relative velocities of the components. The obtained expression is used to solve the problem on the expansion of a current-carrying plasma microjet emitted from the cathode surface into vacuum. Two types of plasmas with two ion components are analyzed: (i) plasma in which the ion components of equal masses are in the charge states Z 1 = +1 and Z 2 = +2 and (ii) plasma with ions in equal charge states but with the mass ratio m 1 /m 2 = 2. It is shown that, for such plasmas, the difference between the velocities of the plasma components remains substantial (about 10% of the average jet velocity in case (i) and 15% in case (ii)) at distances of several centimeters from the emission center, where it can be measured experimentally, provided that its initial value at the emitting cathode surface exceeds a certain threshold. This effect is investigated as a function of the mass ratio and charge states of the ion components.

  15. Improving sensitivity of residual current transformers to high frequency earth fault currents

    Directory of Open Access Journals (Sweden)

    Czapp Stanislaw

    2017-09-01

    Full Text Available For protection against electric shock in low voltage systems residual current devices are commonly used. However, their proper operation can be interfered when high frequency earth fault current occurs. Serious hazard of electrocution exists then. In order to detect such a current, it is necessary to modify parameters of residual current devices, especially the operating point of their current transformer. The authors proposed the modification in the structure of residual current devices. This modification improves sensitivity of residual current devices when high frequency earth fault current occurs. The test of the modified residual current device proved that the authors’ proposition is appropriate.

  16. Efficient single light-emitting layer pure blue phosphorescent organic light-emitting devices with wide gap host and matched interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, Yunlong; Zhou, Liang, E-mail: zhoul@ciac.ac.cn; Cui, Rongzhen; Li, Yanan; Zhao, Xuesen; Zhang, Hongjie, E-mail: hongjie@ciac.ac.cn

    2015-12-15

    In this work, we report the highly efficient pure blue electroluminescent (EL) device based on bis[(3,5-difluoro-4-cyanophenyl)pyridine]picolinate iridium(III) (FCNIrpic) doped 9-(4-tert-Butylphenyl)-3,6-bis(triphenylsilyl)-9H-carbazole (CzSi) film. The matched energy levels of FCNIrpic and CzSi are helpful in facilitating the trapping of carriers, while the high triplet energy of CzSi can well avoid the undesired reverse energy transfer. More importantly, the injection of holes was further accelerated by inserting 5 nm 4,4′,4″-Tri(9-carbazoyl)triphenylamine (TcTa) film between hole transport layer and lighting-emitting layer (EML) as interlayer. Consequently, EL performances were significantly enhanced attributed to wider recombination zone and better balance of holes and electrons. Interestingly, single-EML device displayed higher performances than those of double-EMLs device. Finally, pure blue EL device with the structure of ITO/MoO{sub 3} (3 nm)/TAPC (40 nm)/TcTa (5 nm)/FCNIrpic (20%): CzSi (30 nm)/TmPyPB (40 nm)/LiF (1 nm)/Al (100 nm) realized the maximum brightness, current efficiency, power efficiency and external quantum efficiency up to 12,505 cd/m{sup 2}, 36.20 cd/A, 28.42 lm/W and 16.9%, respectively. Even at the high brightness of 1000 cd/m{sup 2}, current efficiency and external quantum efficiency up to 17.40 cd/A and 8.1%, respectively, can be retained by the same device.

  17. High temperature superconductor current leads

    International Nuclear Information System (INIS)

    Zeimetz, B.; Liu, H.K.; Dou, S.X.

    1996-01-01

    Full text: The use of superconductors in high electrical current applications (magnets, transformers, generators etc.) usually requires cooling with liquid Helium, which is very expensive. The superconductor itself produces no heat, and the design of Helium dewars is very advanced. Therefore most of the heat loss, i.e. Helium consumption, comes from the current lead which connects the superconductor with its power source at room temperature. The current lead usually consists of a pair of thick copper wires. The discovery of the High Temperature Superconductors makes it possible to replace a part of the copper with superconducting material. This drastically reduces the heat losses because a) the superconductor generates no resistive heat and b) it is a very poor thermal conductor compared with the copper. In this work silver-sheathed superconducting tapes are used as current lead components. The work comprises both the production of the tapes and the overall design of the leads, in order to a) maximize the current capacity ('critical current') of the superconductor, b) minimize the thermal conductivity of the silver clad, and c) optimize the cooling conditions

  18. Reducing AC-Winding Losses in High-Current High-Power Inductors

    DEFF Research Database (Denmark)

    Nymand, Morten; Madawala, Udaya K.; Andersen, Michael Andreas E.

    2009-01-01

    Foil windings are preferable in high-current high-power inductors to realize compact designs and to reduce dc-current losses. At high frequency, however, proximity effect will cause very significant increase in ac resistance in multi-layer windings, and lead to high ac winding losses. This paper ...

  19. Color-Tunable and High-Efficiency Dye-Encapsulated Metal-Organic Framework Composites Used for Smart White-Light-Emitting Diodes.

    Science.gov (United States)

    Chen, Wenwei; Zhuang, Yixi; Wang, Le; Lv, Ying; Liu, Jianbin; Zhou, Tian-Liang; Xie, Rong-Jun

    2018-05-25

    Luminescent metal-organic frameworks (MOFs) (typically dye-encapsulated MOFs) are considered as one kind of interesting downconversion materials for white-light-emitting diodes (LEDs), but their quantum efficiency (QE) is not sufficient and thus needs to be significantly enhanced for practical applications. In this study, we successfully synthesized a series of Rh@bio-MOF-1 (Rh = rhodamine) with an internal QE as high as ∼79% via a solvothermal reaction followed by cation exchanges. The high efficiency of the Rh@bio-MOF-1 composites was attributable to the high intrinsic luminescent efficiency of the selected Rh dyes, the confinement effect in the bio-MOF-1 host, and the uniform particle morphology. The emission maximum could be continuously tuned from 550 to 610 nm by controlling the species and concentration of encapsulated dye molecules, showing great color tunability of the dye-encapsulated MOFs. The emission lifetime of ∼7 ns was 1 or 2 magnitude orders shorter than that of Ce 3+ - or Eu 2+ -doped inorganic phosphors, allowing for visible light communication (VLC). White LEDs, fabricated by using the synthesized Rh@bio-MOF-1 composite and inorganic phosphors of green (Ba,Sr) 2 SiO 4 :Eu 2+ and red CaAlSiN 3 :Eu 2+ , exhibited a high color rendering index of 80-94, a luminous efficacy of 94-156 lm/W, and an excellent stability in color point against drive current. The Rh@bio-MOF-1 composites with tunable colors, short emission lifetime, and high QE are expected to be used for smart white LEDs with multifunctions of both lighting and VLC.

  20. Toxicity of inhaled alpha-emitting radionuclides - Status report

    International Nuclear Information System (INIS)

    Muggenburg, B.A.; Mewhinney, J.A.; Guilmette, R.A.; Gillett, N.A.; Diel, J.H.; Lundgren, D.L.; Hahn, F.F.; Boecker, B.B.; McClellan, R.O.

    1988-01-01

    The toxicity of inhaled alpha-emitting radionuclides is being investigated in a series of interrelated dose-response studies. Dogs, rodents, and nonhuman primates have been exposed to monodisperse or polydisperse aerosols of the oxides of 239 Pu, 238 Pu, 241 Am, or 244 Cm to measure the relative importance of average organ dose, local dose around particles, specific activity, chemical form, particle size, and number of particles inhaled to the development of biological effects. The influence of animal species, age at exposure, and pre-existing lung disease, as well as the effects of repeated exposure, are also being studied, because they may influence the toxicity of these radionuclides. (author)

  1. A high-current pulsed cathodic vacuum arc plasma source

    International Nuclear Information System (INIS)

    Oates, T.W.H.; Pigott, J.; Mckenzie, D.R.; Bilek, M.M.M.

    2003-01-01

    Cathodic vacuum arcs (CVAs) are well established as a method for producing metal plasmas for thin film deposition and as a source of metal ions. Fundamental differences exist between direct current (dc) and pulsed CVAs. We present here results of our investigations into the design and construction of a high-current center-triggered pulsed CVA. Power supply design based on electrolytic capacitors is discussed and optimized based on obtaining the most effective utilization of the cathode material. Anode configuration is also discussed with respect to the optimization of the electron collection capability. Type I and II cathode spots are observed and discussed with respect to cathode surface contamination. An unfiltered deposition rate of 1.7 nm per pulse, at a distance of 100 mm from the source, has been demonstrated. Instantaneous plasma densities in excess of 1x10 19 m -3 are observed after magnetic filtering. Time averaged densities an order of magnitude greater than common dc arc densities have been demonstrated, limited by pulse repetition rate and filter efficiency

  2. Aluminum-doped zinc oxide films as transparent conductive electrode for organic light-emitting devices

    International Nuclear Information System (INIS)

    Jiang, X.; Wong, F.L.; Fung, M.K.; Lee, S.T.

    2003-01-01

    Highly transparent conductive, aluminum-doped zinc oxide (ZnO:Al) films were deposited on glass substrates by midfrequency magnetron sputtering of metallic aluminum-doped zinc target. ZnO:Al films with surface work functions between 3.7 and 4.4 eV were obtained by varying the sputtering conditions. Organic light-emitting diodes (OLEDs) were fabricated on these ZnO:Al films. A current efficiency of higher than 3.7 cd/A, was achieved. For comparison, 3.9 cd/A was achieved by the reference OLEDs fabricated on commercial indium-tin-oxide substrates

  3. Electron emitting filaments for electron discharge devices

    International Nuclear Information System (INIS)

    Leung, K.N.; Pincosy, P.A.; Ehlers, K.W.

    1988-01-01

    This patent describes an electron emitting device for use in an electron discharge system. It comprises: a filament having a pair of terminal ends, electrical supply means for supplying electrical power to the terminal ends of the filament for directly heating the filament by the passage of an electrical current along the filament between the terminal ends, the filament being substantially tapered in cross section continuously in one direction from one of its pair of terminal ends to another of its pair of terminal ends to achieve uniform heating of the filament along the length thereof by compensating for the nonuniform current along the filament due to the emission of electrons therefrom

  4. Electrode quenching control for highly efficient CsPbBr3 perovskite light-emitting diodes via surface plasmon resonance and enhanced hole injection by Au nanoparticles

    Science.gov (United States)

    Meng, Yan; Wu, Xiaoyan; Xiong, Ziyang; Lin, Chunyan; Xiong, Zuhong; Blount, Ethan; Chen, Ping

    2018-04-01

    Compared to organic-inorganic hybrid metal halide perovskites, all-inorganic cesium lead halides (e.g, CsPbBr3) hold greater promise in being emissive materials for light-emitting diodes owing to their superior optoelectronic properties as well as their higher stabilities. However, there is still considerable potential for breakthroughs in the current efficiency of CsPbBr3 perovskite light-emitting diodes (PeLEDs). Electrode quenching is one of the main problems limiting the current efficiency of PeLEDs when poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) is used as the hole injection layer. In this work, electrode quenching control was realized via incorporating Au NPs into PEDOT:PSS. As a result, the CsPbBr3 PeLEDs realized an improvement in maximum luminescence ranging from ˜2348 to ˜7660 cd m-2 (˜226% enhancement) and current efficiency from 1.65 to 3.08 cd A-1 (˜86% enhancement). Such substantial enhancement of the electroluminescent performance can be attributed to effective electrode quenching control at the PEDOT:PSS/CsPbBr3 perovskite interface via the combined effects of local surface plasma resonance coupling and enhanced hole transportation in the PEDOT:PSS layer by Au nanoparticles.

  5. Organic light-emitting devices with fullerene/aluminum composite anode

    International Nuclear Information System (INIS)

    Song, Q.L.; Li, C.M.; Wang, M.L.; Sun, X.Y.

    2008-01-01

    Our previous work demonstrates that fullerene/Aluminum (C 60 /Al) can be used as a composite anode in organic solar cells. In this work, we report that an organic light emitting devices (OLEDs) can be made with the C 60 /Al composite anode as well. The OLEDs show comparable current density and brightness to the traditional devices with the indium tin oxide anode

  6. Radioluminescence of red-emitting Eu-doped phosphors for fiberoptic dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Molina, P.; Santiago, M.; Marcazzo, J.; Caselli, E. [Universidad Nacional del Centro de la Provincia de Buenos Aires, Instituto de Fisica Arroyo Seco, Pinto 399, 7000 Tandil (Argentina); Spano, F. [Autoridad Regulatoria Nuclear, Av. del Libertador 8250, 1429 Buenos Aires (Argentina); Henniger, J. [Institut fur Kern-und Teilchenphysik, Zellescher Weg 19, 01069 Dresden (Germany); Cravero, W., E-mail: pmolina@exa.unicen.edu.ar [Universidad Nacional del Sur, Departamento de Fisica, Av. Colon 80, 8000FTN Bahia Blanca, Buenos Aires (Argentina)

    2011-10-15

    The fiberoptic dosimetry technique (FOD) has become an attractive method for in-vivo real-time dosimetry in radiotherapy. It is based on the use of a tiny piece of scintillator coupled to the end of an optical fiber, which collects the light emitted by the scintillator during irradiation (radioluminescence). Carbon-doped aluminum oxide (Al{sub 2}O{sub 3}:C) is one of the most radioluminescence materials for FOD due to its high efficiency but it presents the drawback of emitting in the spectral region, where spurious luminescence is also important. Spurious luminescence from optical fiber, termed stem effect, is the main problem afflicting FOD. Several techniques have been applied to remove the stem effect. Optical filtering, which consists in using long-pass filters, is the simplest one. This technique is useful when red-emitting scintillators are employed. In this work, the feasibility of using red-emitting Eu-doped phosphors as FOD scintillators has been investigated. (Author)

  7. Passively mode-locked diode-pumped Tm3+:YLF laser emitting at 1.91 µm using a GaAs-based SESAM

    Science.gov (United States)

    Tyazhev, A.; Soulard, R.; Godin, T.; Paris, M.; Brasse, G.; Doualan, J.-L.; Braud, A.; Moncorgé, R.; Laroche, M.; Camy, P.; Hideur, A.

    2018-04-01

    We report on a diode-pumped Tm:YLF laser passively mode-locked with an InGaAs saturable absorber. The laser emits a train of 31 ps pulses at a wavelength of 1.91 µm with a repetition rate of 94 MHz and a maximum average power of 95 mW. A sustained and robust mode-locking with a signal-to-noise ratio of ~70 dB is obtained even at high relative air humidity, making this system attractive for applications requiring ultra-short pulses in the spectral window just below 2 µm.

  8. Cuprous halides semiconductors as a new means for highly efficient light-emitting diodes

    Science.gov (United States)

    Ahn, Doyeol; Park, Seoung-Hwan

    2016-01-01

    In group-III nitrides in use for white light-emitting diodes (LEDs), optical gain, measure of luminous efficiency, is very low owing to the built-in electrostatic fields, low exciton binding energy, and high-density misfit dislocations due to lattice-mismatched substrates. Cuprous halides I-VII semiconductors, on the other hand, have negligible built-in field, large exciton binding energies and close lattice matched to silicon substrates. Recent experimental studies have shown that the luminescence of I-VII CuCl grown on Si is three orders larger than that of GaN at room temperature. Here we report yet unexplored potential of cuprous halides systems by investigating the optical gain of CuCl/CuI quantum wells. It is found that the optical gain and the luminescence are much larger than that of group III-nitrides due to large exciton binding energy and vanishing electrostatic fields. We expect that these findings will open up the way toward highly efficient cuprous halides based LEDs compatible to Si technology. PMID:26880097

  9. A novel double perovskite tellurate Eu3+-doped Sr2MgTeO6 red-emitting phosphor with high thermal stability

    Science.gov (United States)

    Liang, Jingyun; Zhao, Shancang; Yuan, Xuexia; Li, Zengmei

    2018-05-01

    A series of novel double perovskite tellurate red-emitting phosphors Sr2MgTeO6:xEu3+ (x = 0.05-0.40) were successfully synthesized by a high-temperature solid-state reaction method. The phase structure, photoluminescence properties and thermal stability of the phosphor were investigated in detail. The phosphor shows dominant emission peak at 614 nm belonging to the 5D0 → 7F2 electric dipole transition under 465 nm excitation. The luminescence intensity keeps increasing with increasing the content of Eu3+ to 25 mol%, and the critical transfer distance of Eu3+ was calculated to be 12 Å. The quenching temperature for Sr2MgTeO6:0.25Eu3+ was estimated to be above 500 K. This spectral feature reveals high color purity and excellent chromaticity coordinate characteristics. Therefore, Eu3+-doped Sr2MgTeO6 phosphors are potential red phosphors for blue chip-based white light-emitting diode and display devices.

  10. Highly efficient blue and warm white organic light-emitting diodes with a simplified structure

    International Nuclear Information System (INIS)

    Li, Xiang-Long; Chen, Dongcheng; Cai, Xinyi; Liu, Ming; Cao, Yong; Su, Shi-Jian; Ouyang, Xinhua; Ge, Ziyi

    2016-01-01

    Two blue fluorescent emitters were utilized to construct simplified organic light-emitting diodes (OLEDs) and the remarkable difference in device performance was carefully illustrated. A maximum current efficiency of 4.84 cd A"−"1 (corresponding to a quantum efficiency of 4.29%) with a Commission Internationale de l’Eclairage (CIE) coordinate of (0.144, 0.127) was achieved by using N,N-diphenyl-4″-(1-phenyl-1H-benzo[d]imidazol-2-yl)-[1, 1′:4′, 1″-terphenyl]-4-amine (BBPI) as a non-doped emission layer of the simplified blue OLEDs without carrier-transport layers. In addition, simplified fluorescent/phosphorescent (F/P) hybrid warm white OLEDs without carrier-transport layers were fabricated by utilizing BBPI as (1) the blue emitter and (2) the host of a complementary yellow phosphorescent emitter (PO-01). A maximum current efficiency of 36.8 cd A"−"1 and a maximum power efficiency of 38.6 lm W"−"1 were achieved as a result of efficient energy transfer from the host to the guest and good triplet exciton confinement on the phosphorescent molecules. The blue and white OLEDs are among the most efficient simplified fluorescent blue and F/P hybrid white devices, and their performance is even comparable to that of most previously reported complicated multi-layer devices with carrier-transport layers. (paper)

  11. Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

    International Nuclear Information System (INIS)

    Barillaro, G.; Diligenti, A.; Pieri, F.; Fuso, F.; Allegrini, M.

    2001-01-01

    A fabrication process, compatible with an industrial bipolar+complementary metal - oxide - semiconductor (MOS)+diffusion MOS technology, has been developed for the fabrication of efficient porous-silicon-based light-emitting diodes. The electrical contact is fabricated with a double n + /p doping, achieving a high current injection efficiency and thus lower biasing voltages. The anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devices show yellow-orange electroluminescence, visible with the naked eye in room lighting. A spectral characterization of light emission is presented and briefly discussed. [copyright] 2001 American Institute of Physics

  12. Self-mixing interferometry in vertical-cavity surface-emitting lasers for nanomechanical cantilever sensing

    Science.gov (United States)

    Larsson, David; Greve, Anders; Hvam, Jørn M.; Boisen, Anja; Yvind, Kresten

    2009-03-01

    We have experimentally investigated self-mixing interference produced by the feedback of light from a polymer micrometer-sized cantilever into a vertical-cavity surface-emitting laser for sensing applications. In particular we have investigated how the visibility of the optical output power and the junction voltage depends on the laser injection current and the distance to the cantilever. The highest power visibility obtained from cantilevers without reflective coatings was ˜60%, resulting in a very high sensitivity of 45 mV/nm with a noise floor below 1.2 mV. Different detection schemes are discussed.

  13. Numerical Analysis of the Temperature Impact on Performance of GaN-Based 460-nm Light-Emitting Diode.

    Science.gov (United States)

    Tawfik, Wael Z; Lee, June Key

    2018-03-01

    The influence of temperature on the characteristics of a GaN-based 460-nm light-emitting diode (LED) prepared on sapphire substrate was simulated using the SiLENSe and SpeCLED software programs. High temperatures impose negative effects on the performance of GaN-based LEDs. As the temperature increases, electrons acquire higher thermal energies, and therefore LEDs may suffer more from high-current loss mechanisms, which in turn causes a reduction in the radiative recombination rate in the active region. The internal quantum efficiency was reduced by about 24% at a current density of 35 A/cm2, and the electroluminescence spectral peak wavelength was redshifted. The LED operated at 260 K and exhibited its highest light output power of ~317.5 mW at a maximum injection current of 350 mA, compared to 212.2 mW for an LED operated at 400 K. However, increasing temperature does not cause a droop in efficiency under high injection conditions. The peak efficiency at 1 mA of injection current decreases more rapidly by ~15% with increasing temperature from 260 to 400 K than the efficiency at high injection current of 350 mA by ~11%.

  14. Top-Emission Organic Light Emitting Diode Fabrication Using High Dissipation Graphite Substrate

    Directory of Open Access Journals (Sweden)

    Yu-Sheng Tsai

    2014-01-01

    Full Text Available This study uses a synthetic graphite fiber as the heat dissipation substrate for top-emission organic light emitting diode (TEOLED to reduce the impact from joule heat. UV glue (YCD91 was spin coated onto the substrate as the insulation layer. The TEOLED structure is (glass; copper; graphite substrate/YCD91 glue/Al/Au/EHI608/TAPC/Alq3/LiF/Al/Ag. The proposed graphite fiber substrate presents better luminous performance compared with glass and copper substrate devices with luminance of 3055 cd/m2 and current efficiency of 6.11 cd/A at 50 mA/cm2. When lighting period of different substrates TEOLED, the substrate case back temperature was observed using different lighting periods. A glass substrate element operating from 5 to 25 seconds at 3000 cd/m2 luminance produced a temperature rate of 1.207°C/sec. Under 4000 cd/m2 luminance the copper and graphite substrate temperature rates were 0.125°C/sec and 0.088°C/sec. Graphite component lifetime was determined to be 1.875 times higher than the glass components and 1.125 times higher than that of copper.

  15. A highly luminescent dinuclear Eu(III) complex based on 4,4'-bis (4'',4'',4''-trifluoro-1'',3''-dioxobutyl)-o-terphenyl for light-emitting diodes

    International Nuclear Information System (INIS)

    Liu Shenggui; He Pei; Wang Huihui; Shi Jianxin; Gong Menglian

    2009-01-01

    A dinuclear Eu(III) complex Eu 2 (btbt) 3 .4H 2 O.CH 3 CH 2 OH.N(CH 2 CH 3 ) 3 was synthesized, where H 2 (btbt) was 4,4'-bis (4'',4'',4'',-trifluoro-1'',3''-dioxobutyl)-o-terphenyl. The composition and structure of the complex were characterized by elemental analysis, IR, UV-vis and FAB-MS spectroscopy. The complex emits the characteristic red luminescence of Eu 3+ ion due to the 5 D 0 → 7 F J (J = 0-4) transitions under ∼395 nm-light excitation with good luminescent quantum efficiency (32%) and exhibits high thermal stability (337 deg. C). Bright red light-emitting diodes (LEDs) were fabricated by coating the complex onto a ∼395 nm-emitting InGaN chip. When the mass ratio of the red phosphor to the silicone is 1:30, the efficiency of the fabricated LEDs with the europium complex is 0.98 lm w -1 . The CIE chromaticity coordinates of the LEDs are x = 0.6057 and y = 0.3137, which are close to the National Television Standard Committee (NTSC) standard values for red color. The results indicate that the complex may act as a red component in the fabrication of near UV InGaN-based white light-emitting diodes with high color-rendering index.

  16. Determination of the trap-assisted recombination strength in polymer light emitting diodes

    NARCIS (Netherlands)

    Kuik, Martijn; Nicolai, Herman T.; Lenes, Martijn; Wetzelaer, Gert-Jan A. H.; Lu, Mingtao; Blom, Paul W. M.

    2011-01-01

    The recombination processes in poly(p-phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

  17. Determination of the trap-assisted recombination strength in polymer light emitting diodes

    NARCIS (Netherlands)

    Kuik, M.; Nicolai, H.T.; Lenes, M.; Wetzelaer, G.-J.A.H.; Lu, M.; Blom, P.W.M.

    2011-01-01

    The recombination processes in poly(p -phenylene vinylene) based polymer light-emitting diodes (PLEDs) are investigated. Photogenerated current measurements on PLED device structures reveal that next to the known Langevin recombination also trap-assisted recombination is an important recombination

  18. Versatile Tri(pyrazolyl)phosphanes as Phosphorus Precursors for the Synthesis of Highly Emitting InP/ZnS Quantum Dots.

    Science.gov (United States)

    Panzer, René; Guhrenz, Chris; Haubold, Danny; Hübner, René; Gaponik, Nikolai; Eychmüller, Alexander; Weigand, Jan J

    2017-11-13

    Tri(pyrazolyl)phosphanes (5 R1,R2 ) are utilized as an alternative, cheap and low-toxic phosphorus source for the convenient synthesis of InP/ZnS quantum dots (QDs). From these precursors, remarkably long-term stable stock solutions (>6 months) of P(OLA) 3 (OLAH=oleylamine) are generated from which the respective pyrazoles are conveniently recovered. P(OLA) 3 acts simultaneously as phosphorus source and reducing agent in the synthesis of highly emitting InP/ZnS core/shell QDs. These QDs are characterized by a spectral range between 530-620 nm and photoluminescence quantum yields (PL QYs) between 51-62 %. A proof-of-concept white light-emitting diode (LED) applying the InP/ZnS QDs as a color-conversion layer was built to demonstrate their applicability and processibility. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Extended steady-state and high-beta regimes of net-current free heliotron plasmas in the Large Helical Device

    International Nuclear Information System (INIS)

    Motojima, O.; Yamada, H.; Komori, A.; Ohyabu, N.; Mutoh, T.; Kaneko, O.; Kawahata, K.; Mito, T.; Ida, K.; Imagawa, S.; Nagayama, Y.; Shimozuma, T.; Watanabe, K.Y.; Masuzaki, S.; Miyazawa, J.; Morisaki, T.; Morita, S.; Ohdachi, S.; Ohno, N.; Saito, K.; Sakakibara, S.; Takeiri, Y.; Tamura, N.; Toi, K.; Tokitani, M.; Yokoyama, M.; Yoshinuma, M.; Ikeda, K.; Isayama, A.; Ishii, K.; Kubo, S.; Murakami, S.; Nagasaki, K.; Seki, T.; Takahata, K.; Takenaga, H.

    2007-01-01

    The performance of net-current free heliotron plasmas has been developed by findings of innovative operational scenarios in conjunction with an upgrade of the heating power and the pumping/fuelling capability in the Large Helical Device (LHD). Consequently, the operational regime has been extended, in particular, with regard to high density, long pulse length and high beta. Diversified studies in LHD have elucidated the advantages of net-current free heliotron plasmas. In particular, an internal diffusion barrier (IDB) by a combination of efficient pumping of the local island divertor function and core fuelling by pellet injection has realized a super dense core as high as 5 x 10 20 m -3 , which stimulates an attractive super dense core reactor. Achievements of a volume averaged beta of 4.5% and a discharge duration of 54 min with a total input energy of 1.6 GJ (490 kW on average) are also highlighted. The progress of LHD experiments in these two years is overviewed by highlighting IDB, high β and long pulse

  20. High-efficiency tris(8-hydroxyquinoline)aluminum (Alq3) complexes for organic white-light-emitting diodes and solid-state lighting.

    Science.gov (United States)

    Pérez-Bolívar, César; Takizawa, Shin-ya; Nishimura, Go; Montes, Victor A; Anzenbacher, Pavel

    2011-08-08

    Combinations of electron-withdrawing and -donating substituents on the 8-hydroxyquinoline ligand of the tris(8-hydroxyquinoline)aluminum (Alq(3)) complexes allow for control of the HOMO and LUMO energies and the HOMO-LUMO gap responsible for emission from the complexes. Here, we present a systematic study on tuning the emission and electroluminescence (EL) from Alq(3) complexes from the green to blue region. In this study, we explored the combination of electron-donating substituents on C4 and C6. Compounds 1-6 displayed the emission tuning between 478 and 526 nm, and fluorescence quantum yield between 0.15 and 0.57. The compounds 2-6 were used as emitters and hosts in organic light-emitting diodes (OLEDs). The highest OLED external quantum efficiency (EQE) observed was 4.6%, which is among the highest observed for Alq(3) complexes. Also, the compounds 3-5 were used as hosts for red phosphorescent dopants to obtain white light-emitting diodes (WOLED). The WOLEDs displayed high efficiency (EQE up to 19%) and high white color purity (color rendering index (CRI≈85). Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Highly Efficient Red and White Organic Light-Emitting Diodes with External Quantum Efficiency beyond 20% by Employing Pyridylimidazole-Based Metallophosphors.

    Science.gov (United States)

    Miao, Yanqin; Tao, Peng; Wang, Kexiang; Li, Hongxin; Zhao, Bo; Gao, Long; Wang, Hua; Xu, Bingshe; Zhao, Qiang

    2017-11-01

    Two highly efficient red neutral iridium(III) complexes, Ir1 and Ir2, were rationally designed and synthesized by selecting two pyridylimidazole derivatives as the ancillary ligands. Both Ir1 and Ir2 show nearly the same photoluminescence emission with the maximum peak at 595 nm (shoulder band at about 638 nm) and achieve high solution quantum yields of up to 0.47 for Ir1 and 0.57 for Ir2. Employing Ir1 and Ir2 as emitters, the fabricated red organic light-emitting diodes (OLEDs) show outstanding performance with the maximum external quantum efficiency (EQE), current efficiency (CE), and power efficiency (PE) of 20.98%, 33.04 cd/A, and 33.08 lm/W for the Ir1-based device and 22.15%, 36.89 cd/A, and 35.85 lm/W for the Ir2-based device, respectively. Furthermore, using Ir2 as red emitter, a trichromatic hybrid white OLED, showing good warm white emission with low correlated color temperature of white device also realizes excellent device efficiencies with the maximum EQE, CE, and PE reaching 22.74%, 44.77 cd/A, and 46.89 lm/W, respectively. Such high electroluminescence performance for red and white OLEDs indicates that Ir1 and Ir2 as efficient red phosphors have great potential for future OLED displays and lightings applications.

  2. Metabolism and biological effects of alpha-emitting radionuclides

    Energy Technology Data Exchange (ETDEWEB)

    Bair, W. J.

    1979-05-01

    The emphasis of much of the current and planned research on the toxicity of alpha-emitting radionuclides is directed toward the complexities of actual and potential conditions of occupational environmental exposures of human beings. These, as well as the more limited studies on mechanisms of biological transport and effects, should increase our ability to predict health risks more accurately and to deal more confidently with human exposures, if and when they occur.

  3. Properties of high current RFQ injectors

    International Nuclear Information System (INIS)

    Schempp, A.; Goethe, J.W.

    1996-01-01

    RFQ linacs are efficient, compact low energy ion structures, which have found numerous applications. They use electrical rf focusing and can capture, bunch and transmit high current ion beams. Some recent development and new projects like a heavy ion injectors for a cyclotron, and the status of the work on high current high duty factor RFQs will be discussed. (author)

  4. Properties of high current RFQ injectors

    Energy Technology Data Exchange (ETDEWEB)

    Schempp, A.; Goethe, J.W. [Frankfurt Univ. (Germany). Inst. fuer Angewandte Physik

    1996-12-31

    RFQ linacs are efficient, compact low energy ion structures, which have found numerous applications. They use electrical rf focusing and can capture, bunch and transmit high current ion beams. Some recent development and new projects like a heavy ion injectors for a cyclotron, and the status of the work on high current high duty factor RFQs will be discussed. (author) 2 refs.

  5. Light emission mechanism of mixed host organic light-emitting diodes

    Science.gov (United States)

    Song, Wook; Lee, Jun Yeob

    2015-03-01

    Light emission mechanism of organic light-emitting diodes with a mixed host emitting layer was studied using an exciplex type mixed host and an exciplex free mixed host. Monitoring of the current density and luminance of the two type mixed host devices revealed that the light emission process of the exciplex type mixed host was dominated by energy transfer, while the light emission of the exciplex free mixed host was controlled by charge trapping. Mixed host composition was also critical to the light emission mechanism, and the contribution of the energy transfer process was maximized at 50:50 mixed host composition. Therefore, it was possible to manage the light emission process of the mixed host devices by managing the mixed host composition.

  6. Study on constant-step stress accelerated life tests in white organic light-emitting diodes.

    Science.gov (United States)

    Zhang, J P; Liu, C; Chen, X; Cheng, G L; Zhou, A X

    2014-11-01

    In order to obtain reliability information for a white organic light-emitting diode (OLED), two constant and one step stress tests were conducted with its working current increased. The Weibull function was applied to describe the OLED life distribution, and the maximum likelihood estimation (MLE) and its iterative flow chart were used to calculate shape and scale parameters. Furthermore, the accelerated life equation was determined using the least squares method, a Kolmogorov-Smirnov test was performed to assess if the white OLED life follows a Weibull distribution, and self-developed software was used to predict the average and the median lifetimes of the OLED. The numerical results indicate that white OLED life conforms to a Weibull distribution, and that the accelerated life equation completely satisfies the inverse power law. The estimated life of a white OLED may provide significant guidelines for its manufacturers and customers. Copyright © 2014 John Wiley & Sons, Ltd.

  7. Molecular-scale simulation of electroluminescence in a multilayer white organic light-emitting diode

    DEFF Research Database (Denmark)

    Mesta, Murat; Carvelli, Marco; de Vries, Rein J

    2013-01-01

    we show that it is feasible to carry out Monte Carlo simulations including all of these molecular-scale processes for a hybrid multilayer organic light-emitting diode combining red and green phosphorescent layers with a blue fluorescent layer. The simulated current density and emission profile......In multilayer white organic light-emitting diodes the electronic processes in the various layers--injection and motion of charges as well as generation, diffusion and radiative decay of excitons--should be concerted such that efficient, stable and colour-balanced electroluminescence can occur. Here...

  8. Emerging applications for vertical cavity surface emitting lasers

    International Nuclear Information System (INIS)

    Harris, J S; O'sullivan, T; Sarmiento, T; Lee, M M; Vo, S

    2011-01-01

    Vertical cavity surface emitting lasers (VCSELs) emitting at 850 nm have experienced explosive growth in the past decade because of their many attractive optical features and incredibly low-cost manufacturability. This review reviews the foundations for GaAs-based VCSEL technology as well as the materials and device challenges to extend the operating wavelength to both shorter and longer wavelengths. We discuss some of the applications that are enabled by the integration of VCSELs with both active and passive semiconductor elements for telecommunications, both in vivo and in vitro biosensing, high-density optical storage and imaging at wavelengths much less than the diffraction limit of light

  9. Improving the Stability of Metal Halide Perovskite Materials and Light-Emitting Diodes.

    Science.gov (United States)

    Cho, Himchan; Kim, Young-Hoon; Wolf, Christoph; Lee, Hyeon-Dong; Lee, Tae-Woo

    2018-01-25

    Metal halide perovskites (MHPs) have numerous advantages as light emitters such as high photoluminescence quantum efficiency with a direct bandgap, very narrow emission linewidth, high charge-carrier mobility, low energetic disorder, solution processability, simple color tuning, and low material cost. Based on these advantages, MHPs have recently shown unprecedented radical progress (maximum current efficiency from 0.3 to 42.9 cd A -1 ) in the field of light-emitting diodes. However, perovskite light-emitting diodes (PeLEDs) suffer from intrinsic instability of MHP materials and instability arising from the operation of the PeLEDs. Recently, many researchers have devoted efforts to overcome these instabilities. Here, the origins of the instability in PeLEDs are reviewed by categorizing it into two types: instability of (i) the MHP materials and (ii) the constituent layers and interfaces in PeLED devices. Then, the strategies to improve the stability of MHP materials and PeLEDs are critically reviewed, such as A-site cation engineering, Ruddlesden-Popper phase, suppression of ion migration with additives and blocking layers, fabrication of uniform bulk polycrystalline MHP layers, and fabrication of stable MHP nanoparticles. Based on this review of recent advances, future research directions and an outlook of PeLEDs for display applications are suggested. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. Trap-assisted and Langevin-type recombination in organic light-emitting diodes

    NARCIS (Netherlands)

    Wetzelaer, G. A. H.; Kuik, M.; Nicolai, H. T.; Blom, P. W. M.

    2011-01-01

    Trapping of charges is known to play an important role in the charge transport of organic semiconductors, but the role of traps in the recombination process has not been addressed. Here we show that the ideality factor of the current of organic light-emitting diodes (OLEDs) in the

  11. High-performance flexible inverted organic light-emitting diodes by exploiting MoS2 nanopillar arrays as electron-injecting and light-coupling layers.

    Science.gov (United States)

    Guo, Kunping; Si, Changfeng; Han, Ceng; Pan, Saihu; Chen, Guo; Zheng, Yanqiong; Zhu, Wenqing; Zhang, Jianhua; Sun, Chang; Wei, Bin

    2017-10-05

    Inverted organic light-emitting diodes (IOLEDs) on plastic substrates have great potential application in flexible active-matrix displays. High energy consumption, instability and poor electron injection are key issues limiting the commercialization of flexible IOLEDs. Here, we have systematically investigated the electrooptical properties of molybdenum disulfide (MoS 2 ) and applied it in developing highly efficient and stable blue fluorescent IOLEDs. We have demonstrated that MoS 2 -based IOLEDs can significantly improve electron-injecting capacity. For the MoS 2 -based device on plastic substrates, we have achieved a very high external quantum efficiency of 7.3% at the luminance of 9141 cd m -2 , which is the highest among the flexible blue fluorescent IOLEDs reported. Also, an approximately 1.8-fold improvement in power efficiency was obtained compared to glass-based IOLEDs. We attributed the enhanced performance of flexible IOLEDs to MoS 2 nanopillar arrays due to their light extraction effect. The van der Waals force played an important role in the formation of MoS 2 nanopillar arrays by thermal evaporation. Notably, MoS 2 -based flexible IOLEDs exhibit an intriguing efficiency roll-up, that is, the current efficiency increases slightly from 14.0 to 14.6 cd A -1 with the luminance increasing from 100 to 5000 cd m -2 . In addition, we observed that the initial brightness of 500 cd m -2 can be maintained at 97% after bending for 500 cycles, demonstrating the excellent mechanical stability of flexible IOLEDs. Furthermore, we have successfully fabricated a transparent, flexible IOLED with low efficiency roll-off at high current density.

  12. White emitting CdS quantum dot nanoluminophores hybridized on near-ultraviolet LEDs for high-quality white light generation and tuning

    International Nuclear Information System (INIS)

    Nizamoglu, Sedat; Mutlugun, Evren; Akyuz, Ozgun; Perkgoz, Nihan Kosku; Demir, Hilmi Volkan; Liebscher, Lydia; Sapra, Sameer; Gaponik, Nikolai; Eychmueller, Alexander

    2008-01-01

    To generate white light using semiconductor nanocrystal (NC) quantum dots integrated on light emitting diodes (LEDs), multiple hybrid device parameters (emission wavelengths of the NCs and the excitation platform, order of the NCs with different sizes, amount of the different types of NCs, etc) need to be carefully designed and properly implemented. In this study, we introduce and demonstrate white LEDs based on simple device hybridization using only a single type of white emitting CdS quantum dot nanoluminophores on near-ultraviolet LEDs. Here we present their design, synthesis-growth, fabrication and characterization. With these hybrid devices, we achieve high color rendering index (>70), despite using only a single NC type. Furthermore, we conveniently tune their photometric properties including the chromaticity coordinates, correlated color temperature, and color rendering index with the number of hybridized nanoluminophores in a controlled manner

  13. Evaluation of high-energy brachytherapy source electronic disequilibrium and dose from emitted electrons.

    Science.gov (United States)

    Ballester, Facundo; Granero, Domingo; Pérez-Calatayud, José; Melhus, Christopher S; Rivard, Mark J

    2009-09-01

    The region of electronic disequilibrium near photon-emitting brachytherapy sources of high-energy radionuclides (60Co, 137CS, 192Ir, and 169Yb) and contributions to total dose from emitted electrons were studied using the GEANT4 and PENELOPE Monte Carlo codes. Hypothetical sources with active and capsule materials mimicking those of actual sources but with spherical shape were examined. Dose contributions due to source photons, x rays, and bremsstrahlung; source beta-, Auger electrons, and internal conversion electrons; and water collisional kerma were scored. To determine if conclusions obtained for electronic equilibrium conditions and electron dose contribution to total dose for the representative spherical sources could be applied to actual sources, the 192Ir mHDR-v2 source model (Nucletron B.V., Veenendaal, The Netherlands) was simulated for comparison to spherical source results and to published data. Electronic equilibrium within 1% is reached for 60Co, 137CS, 192Ir, and 169Yb at distances greater than 7, 3.5, 2, and 1 mm from the source center, respectively, in agreement with other published studies. At 1 mm from the source center, the electron contributions to total dose are 1.9% and 9.4% for 60Co and 192Ir, respectively. Electron emissions become important (i.e., > 0.5%) within 3.3 mm of 60Co and 1.7 mm of 192Ir sources, yet are negligible over all distances for 137Cs and 169Yb. Electronic equilibrium conditions along the transversal source axis for the mHDR-v2 source are comparable to those of the spherical sources while electron dose to total dose contribution are quite different. Electronic equilibrium conditions obtained for spherical sources could be generalized to actual sources while electron contribution to total dose depends strongly on source dimensions, material composition, and electron spectra.

  14. Phosphorescence as a probe of exciton formation and energy transfer in organic light emitting diodes

    International Nuclear Information System (INIS)

    Baldo, M.; Segal, M.

    2004-01-01

    The development of highly efficient phosphorescent molecules has approximately quadrupled the quantum efficiency of organic light emitting devices (OLEDs). By harnessing triplet as well as singlet excitons, efficient molecular phosphorescence has also enabled novel studies of exciton physics in organic semiconductors. In this review, we will summarize recent progress in understanding exciton formation and energy transfer using phosphorescent molecular probes. Particular emphasis is given to two topics of current interest: energy transfer in blue phosphorescent OLEDs, and quantifying the formation ratio of singlet to triplet excitons in small-molecular weight materials and polymers. (orig.)

  15. Irradiation Pattern Analysis for Designing Light Sources-Based on Light Emitting Diodes

    International Nuclear Information System (INIS)

    Rojas, E.; Stolik, S.; La Rosa, J. de; Valor, A.

    2016-01-01

    Nowadays it is possible to design light sources with a specific irradiation pattern for many applications. Light Emitting Diodes present features like high luminous efficiency, durability, reliability, flexibility, among others as the result of its rapid development. In this paper the analysis of the irradiation pattern of the light emitting diodes is presented. The approximation of these irradiation patterns to both, a Lambertian, as well as a Gaussian functions for the design of light sources is proposed. Finally, the obtained results and the functionality of bringing the irradiation pattern of the light emitting diodes to these functions are discussed. (Author)

  16. The use of induction linacs with nonlinear magnetic drive as high average power accelerators

    International Nuclear Information System (INIS)

    Birx, D.L.; Cook, E.G.; Hawkins, S.A.; Newton, M.A.; Poor, S.E.; Reginato, L.L.; Schmidt, J.A.; Smith, M.W.

    1985-01-01

    The marriage of induction linac technology with Nonlinear Magnetic Modulators has produced some unique capabilities. It appears possible to produce electron beams with average currents measured in amperes, at gradients exceeding 1 MeV/m, and with power efficiences approaching 50%. A 2 MeV, 5 kA electron accelerator is under construction at Lawrence Livermore National Laboratory (LLNL) to allow us to demonstrate some of these concepts. Progress on this project is reported here. (orig.)

  17. Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

    Science.gov (United States)

    Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

    2017-06-27

    Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

  18. Current collapse imaging of Schottky gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation measurement

    International Nuclear Information System (INIS)

    Katsuno, Takashi; Ishikawa, Tsuyoshi; Ueda, Hiroyuki; Uesugi, Tsutomu; Manaka, Takaaki; Iwamoto, Mitsumasa

    2014-01-01

    Two-dimensional current collapse imaging of a Schottky gate AlGaN/GaN high electron mobility transistor device was achieved by optical electric field-induced second-harmonic generation (EFISHG) measurements. EFISHG measurements can detect the electric field produced by carriers trapped in the on-state of the device, which leads to current collapse. Immediately after (e.g., 1, 100, or 800 μs) the completion of drain-stress voltage (200 V) in the off-state, the second-harmonic (SH) signals appeared within 2 μm from the gate edge on the drain electrode. The SH signal intensity became weak with time, which suggests that the trapped carriers are emitted from the trap sites. The SH signal location supports the well-known virtual gate model for current collapse.

  19. Toxicity of inhaled alpha-emitting radionuclides - Status report

    Energy Technology Data Exchange (ETDEWEB)

    Muggenburg, B A; Mewhinney, J A; Guilmette, R A; Gillett, N A; Diel, J H; Lundgren, D L; Hahn, F F; Boecker, B B; McClellan, R O

    1988-12-01

    The toxicity of inhaled alpha-emitting radionuclides is being investigated in a series of interrelated dose-response studies. Dogs, rodents, and nonhuman primates have been exposed to monodisperse or polydisperse aerosols of the oxides of {sup 239}Pu, {sup 238}Pu, {sup 241}Am, or {sup 244}Cm to measure the relative importance of average organ dose, local dose around particles, specific activity, chemical form, particle size, and number of particles inhaled to the development of biological effects. The influence of animal species, age at exposure, and pre-existing lung disease, as well as the effects of repeated exposure, are also being studied, because they may influence the toxicity of these radionuclides. (author)

  20. Novel green-emitting Na2CaPO4F:Eu2+ phosphors for near-ultraviolet white light-emitting diodes

    International Nuclear Information System (INIS)

    Huang, Chien-Hao; Chen, Yen-Chi; Kuo, Te-Wen; Chen, Teng-Ming

    2011-01-01

    In this study, green-emitting Na 2 CaPO 4 F:Eu 2+ phosphors were synthesized by solid-state reactions. The excitation spectra of the phosphors showed a broad hump between 250 and 450 nm; the spectra match well with the near-ultraviolet (NUV) emission spectra of light-emitting diodes (LEDs). The emission spectrum showed an intense broad emission band centered at 506 nm. White LEDs were fabricated by integrating a 390 nm NUV chip comprising blue-emitting BaMgAl 10 O 17 :Eu 2+ , green-emitting Na 2 CaPO 4 F:0.02 Eu 2+ , and red-emitting CaAlSiN 3 :Eu 2+ phosphors into a single package; the white LEDs exhibited white light with a correlated color temperature of 5540 K, a color-rendering index of 90.75, and color coordinates (0.332, 0.365) close to those of ideal white light. - Highlights: → Novel green-emitting Na 2 CaPO 4 F:Eu 2+ phosphors were synthesized by solid-state reactions in this research. → White LEDs were fabricated by integrating a 390 nm NUV chip comprising blue-emitting BaMgAl 10 O 17 :Eu 2+ , green-emitting Na 2 CaPO 4 F:0.02Eu 2+ , and red-emitting CaAlSiN 3 :Eu 2+ phosphors into a single package. → The white LEDs exhibited white light with a correlated color temperature of 5540 K, a color-rendering index of 90.75, and color coordinates (0.332, 0.365) close to those of ideal white light.