Neutron detection using boron gallium nitride semiconductor material

Directory of Open Access Journals (Sweden)

Katsuhiro Atsumi

2014-03-01

Full Text Available In this study, we developed a new neutron-detection device using a boron gallium nitride (BGaN semiconductor in which the B atom acts as a neutron converter. BGaN and gallium nitride (GaN samples were grown by metal organic vapor phase epitaxy, and their radiation detection properties were evaluated. GaN exhibited good sensitivity to α-rays but poor sensitivity to γ-rays. Moreover, we confirmed that electrons were generated in the depletion layer under neutron irradiation. This resulted in a neutron-detection signal after α-rays were generated by the capture of neutrons by the B atoms. These results prove that BGaN is useful as a neutron-detecting semiconductor material.

Gallium nitride-based micro-opto-electro-mechanical systems

Science.gov (United States)

Stonas, Andreas Robert

Gallium Nitride and its associated alloys InGaN and AlGaN have many material properties that are highly desirable for micro-electro-mechanical systems (MEMS), and more specifically micro-opto-electro-mechanical systems (MOEMS). The group III-nitrides are tough, stiff, optically transparent, direct bandgap, chemically inert, highly piezoelectric, and capable of functioning at high temperatures. There is currently no other semiconductor system that possesses all of these properties. Taken together, these attributes make the nitrides prime candidates not only for creating new versions of existing device structures, but also for creating entirely unique devices which combine these properties in novel ways. Unfortunately, their chemical resiliency also makes the group III-nitrides extraordinarily difficult to shape into devices. In particular, until this research, no undercut etch technology existed that could controllably separate a selected part of a MEMS device from its sapphire or silicon carbide substrate. This has effectively prevented GaN-based MEMS from being developed. This dissertation describes how this fabrication obstacle was overcome by a novel etching geometry (bandgap-selective backside-illuminated photoelectochemical (BS-BIPEC) etching) and its resulting morphologies. Several gallium-nitride based MEMS devices were created, actuated, and modelled, including cantilevers and membranes. We describe in particular our pursuit of one of the many novel device elements that is possible only in this material system: a transducer that uses an externally applied strain to dynamically change the optical transition energy of a quantum well. While the device objective of a dynamically tunable quantum well was not achieved, we have demonstrated sufficient progress to believe that such a device will be possible soon. We have observed a shift (5.5meV) of quantum well transition energies in released structures, and we have created structures that can apply large biaxial

Optical and Micro-Structural Characterization of MBE Grown Indium Gallium Nitride Polar Quantum Dots

KAUST Repository

El Afandy, Rami

2011-07-07

Gallium nitride and related materials have ushered in scientific and technological breakthrough for lighting, mass data storage and high power electronic applications. These III-nitride materials have found their niche in blue light emitting diodes and blue laser diodes. Despite the current development, there are still technological problems that still impede the performance of such devices. Three-dimensional nanostructures are proposed to improve the electrical and thermal properties of III-nitride optical devices. This thesis consolidates the characterization results and unveils the unique physical properties of polar indium gallium nitride quantum dots grown by molecular beam epitaxy technique. In this thesis, a theoretical overview of the physical, structural and optical properties of polar III-nitrides quantum dots will be presented. Particular emphasis will be given to properties that distinguish truncated-pyramidal III-nitride quantum dots from other III-V semiconductor based quantum dots. The optical properties of indium gallium nitride quantum dots are mainly dominated by large polarization fields, as well as quantum confinement effects. Hence, the experimental investigations for such quantum dots require performing bandgap calculations taking into account the internal strain fields, polarization fields and confinement effects. The experiments conducted in this investigation involved the transmission electron microscopy and x-ray diffraction as well as photoluminescence spectroscopy. The analysis of the temperature dependence and excitation power dependence of the PL spectra sheds light on the carrier dynamics within the quantum dots, and its underlying wetting layer. A further analysis shows that indium gallium nitride quantum dots through three-dimensional confinements are able to prevent the electronic carriers from getting thermalized into defects which grants III-nitrides quantum dot based light emitting diodes superior thermally induced optical

Indium gallium nitride/gallium nitride quantum wells grown on polar and nonpolar gallium nitride substrates

Science.gov (United States)

Lai, Kun-Yu

Nonpolar (m-plane or a-plane) gallium nitride (GaN) is predicted to be a potential substrate material to improve luminous efficiencies of nitride-based quantum wells (QWs). Numerical calculations indicated that the spontaneous emission rate in a single In0.15Ga0.85N/GaN QW could be improved by ˜2.2 times if the polarization-induced internal field was avoided by epitaxial deposition on nonpolar substrates. A challenge for nonpolar GaN is the limited size (less than 10x10 mm2) of substrates, which was addressed by expansion during the regrowth by Hydride Vapor Phase Epitaxy (HVPE). Subsurface damage in GaN substrates were reduced by annealing with NH3 and N2 at 950°C for 60 minutes. It was additionally found that the variation of m-plane QWs' emission properties was significantly increased when the substrate miscut toward a-axis was increased from 0° to 0.1°. InGaN/GaN QWs were grown by Metalorganic Chemical Vapor Deposition (MOCVD) on c-plane and m-plane GaN substrates. The QWs were studied by cathodoluminescence spectroscopy with different incident electron beam probe currents (0.1 nA ˜ 1000 nA). Lower emission intensities and longer peak wavelengths from c-plane QWs were attributed to the Quantum-confined Stark Effect (QCSE). The emission intensity ratios of m-plane QWs to c-plane QWs decreased from 3.04 at 1 nA to 1.53 at 1000 nA. This was identified as the stronger screening effects of QCSE at higher current densities in c-plane QWs. To further investigate these effects in a fabricated structure, biased photoluminescence measurements were performed on m-plane InGaN/GaN QWs. The purpose was to detect the possible internal fields induced by the dot-like structure in the InGaN layer through the response of these internal fields under externally applied fields. No energy shifts of the QWs were observed, which was attributed to strong surface leakage currents.

Micro-Scale Gallium Nitride Pressure Sensors for Advanced Harsh Environment Space Technology

Data.gov (United States)

National Aeronautics and Space Administration — The goal of this research is to study the high-temperature response of the 2-dimesional electron gas (2DEG) that occurs at the interface of aluminum gallium nitride...

Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016

Science.gov (United States)

2016-12-01

ARL-TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky...TR-7913 ● DEC 2016 US Army Research Laboratory Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk...Fabrication and Characterization of Vertical Gallium Nitride Power Schottky Diodes on Bulk GaN Substrates FY2016 5a. CONTRACT NUMBER 5b. GRANT NUMBER

Layer-by-layer composition and structure of silicon subjected to combined gallium and nitrogen ion implantation for the ion synthesis of gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Korolev, D. S.; Mikhaylov, A. N.; Belov, A. I.; Vasiliev, V. K.; Guseinov, D. V.; Okulich, E. V. [Nizhny Novgorod State University (Russian Federation); Shemukhin, A. A. [Moscow State University, Skobeltsyn Institute of Nuclear Physics (Russian Federation); Surodin, S. I.; Nikolitchev, D. E.; Nezhdanov, A. V.; Pirogov, A. V.; Pavlov, D. A.; Tetelbaum, D. I., E-mail: tetelbaum@phys.unn.ru [Nizhny Novgorod State University (Russian Federation)

2016-02-15

The composition and structure of silicon surface layers subjected to combined gallium and nitrogen ion implantation with subsequent annealing have been studied by the X-ray photoelectron spectroscopy, Rutherford backscattering, electron spin resonance, Raman spectroscopy, and transmission electron microscopy techniques. A slight redistribution of the implanted atoms before annealing and their substantial migration towards the surface during annealing depending on the sequence of implantations are observed. It is found that about 2% of atoms of the implanted layer are replaced with gallium bonded to nitrogen; however, it is impossible to detect the gallium-nitride phase. At the same time, gallium-enriched inclusions containing ∼25 at % of gallium are detected as candidates for the further synthesis of gallium-nitride inclusions.

Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

Science.gov (United States)

2015-09-01

ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of...frequency of FETs. Such a device may also be known as a heterojunction field-effect transistor (HFET), modulation-doped field-effect transistor (MODFET...electrons. This charge attracts electrons to the interface, forming the 2DEG channel. The HEMT includes a heterojunction of two semiconducting

An electron beam induced current study of gallium nitride and diamond materials

International Nuclear Information System (INIS)

Cropper, A.D.; Moore, D.J.; Scott, C.S.; Green, R.

1995-01-01

The continual need for microelectronic devices that operate under severe electronic and environmental conditions (high temperature, high frequency, high power, and radiation tolerance) has sustained research in wide bandgap semiconductor materials. The properties suggest these wide-bandgap semiconductor materials have tremendous potential for military and commercial applications. High frequency bipolar transistors and field effect transistors, diodes, and short wavelength optical devices have been proposed using these materials. Although research efforts involving the study of transport properties in Gallium Nitride (GaN) and Diamond have made significant advances, much work is still needed to improve the material quality so that the electrophysical behavior of device structures can be further understood and exploited. Electron beam induced current (EBIC) measurements can provide a method of understanding the transport properties in Gallium Nitride (GaN) and Diamond. This technique basically consists of measuring the current or voltage transient response to the drift and diffusion of carriers created by a short-duration pulse of radiation. This method differs from other experimental techniques because it is based on a fast transient electron beam probe created from a high speed, laser pulsed photoemission system

Proton irradiation effects on gallium nitride-based devices

Science.gov (United States)

Karmarkar, Aditya P.

Proton radiation effects on state-of-the-art gallium nitride-based devices were studied using Schottky diodes and high electron-mobility transistors. The device degradation was studied over a wide range of proton fluences. This study allowed for a correlation between proton irradiation effects between different types of devices and enhanced the understanding of the mechanisms responsible for radiation damage in GaN-based devices. Proton irradiation causes reduced carrier concentration and increased series resistance and ideality factor in Schottky diodes. 1.0-MeV protons cause greater degradation than 1.8-MeV protons because of their higher non-ionizing energy loss. The displacement damage in Schottky diodes recovers during annealing. High electron-mobility transistors exhibit extremely high radiation tolerance, continuing to perform up to a fluence of ˜1014 cm-2 of 1.8-MeV protons. Proton irradiation creates defect complexes in the thin-film structure. Decreased sheet carrier mobility due to increased carrier scattering and decreased sheet carrier density due to carrier removal by the defect centers are the primary damage mechanisms. Interface disorder at either the Schottky or the Ohmic contact plays a relatively unimportant part in overall device degradation in both Schottky diodes and high electron-mobility transistors.

Microfabrication in free-standing gallium nitride using UV laser micromachining

International Nuclear Information System (INIS)

Gu, E.; Howard, H.; Conneely, A.; O'Connor, G.M.; Illy, E.K.; Knowles, M.R.H.; Edwards, P.R.; Martin, R.W.; Watson, I.M.; Dawson, M.D.

2006-01-01

Gallium nitride (GaN) and related alloys are important semiconductor materials for fabricating novel photonic devices such as ultraviolet (UV) light-emitting diodes (LEDs) and vertical cavity surface-emitting lasers (VCSELs). Recent technical advances have made free-standing GaN substrates available and affordable. However, these materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high-resolution processing for these materials is increasingly important. In this paper, we report the fabrication of microstructures in free-standing GaN using pulsed UV lasers. An effective method was first developed to remove the re-deposited materials due to the laser machining. In order to achieve controllable machining and high resolution in GaN, machining parameters were carefully optimised. Under the optimised conditions, precision features such as holes (through holes, blind or tapered holes) on a tens of micrometer length scale have been machined. To fabricate micro-trenches in GaN with vertical sidewalls and a flat bottom, different process strategies of laser machining were tested and optimised. Using this technique, we have successfully fabricated high-quality micro-trenches in free-standing GaN with various widths and depths. The approach combining UV laser micromachining and other processes is also discussed. Our results demonstrate that the pulsed UV laser is a powerful tool for fabricating precision microstructures and devices in gallium nitride

Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes

KAUST Repository

Elafandy, Rami T.

2014-04-01

Despite the recent progress in gallium nitride (GaN) growth technology, the excessively high threading dislocation (TD) density within the GaN crystal, caused by the reliance on heterogeneous substrates, impedes the development of high-efficiency, low-cost, GaN-based heterostructure devices. For the first time, the chemical exfoliation of completely TD-free, single-crystalline, ultrathin (tens of nanometers) GaN nanomembranes is demonstrated using UV-assisted electroless chemical etching. These nanomembranes can act as seeding layers for subsequent overgrowth of high-quality GaN. A model is proposed, based on scanning and transmission electron microscopy as well as optical measurements to explain the physical processes behind the formation of the GaN nanomembranes. These novel nanomembranes, once transferred to other substrates, present a unique and technologically attractive path towards integrating high-efficiency GaN optical components along with silicon electronics. Interestingly, due to their nanoscale thickness and macroscopic sizes, these nanomembranes may enable the production of flexible GaN-based optoelectronics. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Localized surface phonon polariton resonances in polar gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Feng, Kaijun, E-mail: kfeng@nd.edu; Islam, S. M.; Verma, Jai; Hoffman, Anthony J. [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Streyer, William; Wasserman, Daniel [Department of Electrical and Computer Engineering, University of Illinois Urbana-Champaign, Urbana, Illinois 61801 (United States); Jena, Debdeep [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); School of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

2015-08-24

We demonstrate the excitation of localized surface phonon polaritons in an array of sub-diffraction pucks fabricated in an epitaxial layer of gallium nitride (GaN) on a silicon carbide (SiC) substrate. The array is characterized via polarization- and angle-dependent reflection spectroscopy in the mid-infrared, and coupling to several localized modes is observed in the GaN Reststrahlen band (13.4–18.0 μm). The same structure is simulated using finite element methods and the charge density of the modes are studied; transverse dipole modes are identified for the transverse electric and magnetic polarizations and a quadrupole mode is identified for the transverse magnetic polarization. The measured mid-infrared spectrum agrees well with numerically simulated spectra. This work could enable optoelectronic structures and devices that support surface modes at mid- and far-infrared wavelengths.

Microstructures of group III-nitrides after implantation with gallium

International Nuclear Information System (INIS)

Kench, P.J.

2001-05-01

High doses of gallium have been implanted into layers of aluminium nitride (AIN), indium nitride (InN) and amorphous silicon nitride (a-SiN x ) in an attempt to bond gallium with nitrogen and form binary or ternary alloys. The microstructure of the resultant layers have been characterised using, principally, transmission electron microscopy and X-ray photoelectron spectroscopy. The implantation of a high dose of Ga ions into AIN was successful in synthesising a GaN/GaAlN compound. The resultant layers were largely uniform but contained aluminium precipitates near the surface. These precipitates were pure Al and were most common in the region associated with the maximum Ga concentration. Deconvolution of X-ray photoelectron spectroscopy peaks indicated that Ga existed in a number of chemical states, including the nitride. Electron diffraction patterns from the implanted layers were closely indexed to both AIN and GaN. A further N implant was used to reduce the concentration of the aluminium precipitates and increase the concentration of GaN bonds. The yield of Ga-N bonds dramatically increased and a reduction in the concentration of Al precipitates was observed. Laser and thermal annealing was performed on the implanted AIN substrates. The near surface regions of the implanted specimens appeared to free of precipitates and bubbles. Laser annealing did have a noticeable effect on the electrical and optical properties of the layers. After laser annealing the conductivity of the Ga implanted layer was lower, indicating that the quality of the material had improved. PL measurements showed that a new PL peak at 2.6 eV appeared after laser annealing. It has been found that implanting InN with gallium can yield Ga-N bonds. However, Ga implants into InN were not as successful at synthesising GaN compounds as those by implanting Ga into AIN, due to the low thermal stability of InN. The implanted InN layers were very irregular and contained large indium precipitates and

LETTER TO THE EDITOR: Fabrication and structure of an opal-gallium nitride nanocomposite

Science.gov (United States)

Davydov, V. Yu; Dunin-Borkovski, R. E.; Golubev, V. G.; Hutchison, J. L.; Kartenko, N. F.; Kurdyukov, D. A.; Pevtsov, A. B.; Sharenkova, N. V.; Sloan, J.; Sorokin, L. M.

2001-02-01

A three-dimensional gallium nitride lattice has been synthesized within the void sublattice of an artificial opal. The composite structure has been characterized using X-ray diffraction, Raman spectroscopy and transmission electron microscopy.

Spin polarized first principles study of Mn doped gallium nitride monolayer nanosheet

Science.gov (United States)

Sharma, Venus; Kaur, Sumandeep; Srivastava, Sunita; Kumar, Tankeshwar

2017-05-01

The structural, electronic and magnetic properties of gallium nitride nanosheet (GaNs) doped with Mn atoms have been studied using spin polarized density functional theory. The binding energy per atom, Energy Band gap, Fermi energy, magnetic moment, electric dipole moment have been found. The doped nanosheet is found to be more stable than pure GaN monolayer nanosheet. Adsorption of Mn atom has been done at four different sites on GaNs which affects the fermi level position. It is found that depending on the doping site, Mn can behave both like p-type semiconductor and also as n-type semiconductor. Also, it is ascertained that Mn doped GaNs (GaNs-Mn) exhibits ferromagnetic behavior.

Adsorption configuration of magnesium on wurtzite gallium nitride surface using first-principles calculations

International Nuclear Information System (INIS)

Yan Han; Gan Zhiyin; Song Xiaohui; Chen Zhaohui; Xu Jingping; Liu Sheng

2009-01-01

First-principles calculations of magnesium adsorption at the Ga-terminated and N-terminated {0 0 0 1} basal plane wurtzite gallium nitride surfaces have been carried out to explain the atomic-scale insight into the initial adsorption processes of magnesium doping in gallium nitride. The results reveal that magnesium adsorption on N-terminated surfaces is preferred than that on Ga-terminated surfaces. Furthermore, the surface diffusivity of magnesium atom on the N-terminated surface is much lower than that on the Ga-terminated surface, which is due to both the larger average adsorption energies and the lower adsorption distance on N-terminated surface than that on Ga-terminated surface. The results indicate that the p-type doping on the Ga-terminated surface will be better distributed than that on the N-terminated surface.

High-temperature performance of gallium-nitride-based pin alpha-particle detectors grown on sapphire substrates

Science.gov (United States)

Zhu, Zhifu; Zhang, Heqiu; Liang, Hongwei; Tang, Bin; Peng, Xincun; Liu, Jianxun; Yang, Chao; Xia, Xiaochuan; Tao, Pengcheng; Shen, Rensheng; Zou, Jijun; Du, Guotong

2018-06-01

The temperature-dependent radiation-detection performance of an alpha-particle detector that was based on a gallium-nitride (GaN)-based pin structure was studied from 290 K to 450 K. Current-voltage-temperature measurements (I-V-T) of the reverse bias show the exponential dependence of leakage currents on the voltage and temperature. The current transport mechanism of the GaN-based pin diode from the reverse bias I-V fitting was analyzed. The temperature-dependent pulse-height spectra of the detectors were studied using an 241 Am alpha-particle source at a reverse bias of 10 V, and the peak positions shifted from 534 keV at 290 K to 490 keV at 450 K. The variation of full width at half maximum (FWHM) from 282 keV at 290 K to 292 keV at 450 K is almost negligible. The GaN-based pin detectors are highly promising for high-temperature environments up to 450 K.

Basic Equations for the Modeling of Gallium Nitride (gan) High Electron Mobility Transistors (hemts)

Science.gov (United States)

Freeman, Jon C.

2003-01-01

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Gallium nitride at the millennial transition

International Nuclear Information System (INIS)

Pankovo, J.I.

2000-01-01

The properties of gallium nitride were uncovered in the early years of exploratory research and endowed with negative electron affinity that could be used to make efficient cold cathodes and even dynodes for electron multipliers. GaN has another property i.e. polar nature of the crystal which makes this material piezo-electric and has non-linear optical properties. The piezo-electric properties led to new piezo electric effect may cause interfacial charge. The non-uniform distribution of acceptors, there is also presence of threading and other dislocation in GaN. Defects reappear where two adjacent overgrowth merge, but the good lateral overgrow region is large enough to make lasers. Injection lasers benefit from strong electrical and optical environment. This was achieved by using quantum wells of InGaN in GaN and this can be doped with rare earth elements to exploit the atomic transition between core levels in these elements. The emission efficiency of electrically excited Er in GaN is nearly temperature incentive from 80K to room temperature. An other application of GaN is as a heterojunction emitter for a bi-polar transistor (HBT) that can operate at high temperatures. (A.B.)

Sodium Flux Growth of Bulk Gallium Nitride

Science.gov (United States)

Von Dollen, Paul Martin

This dissertation focused on development of a novel apparatus and techniques for crystal growth of bulk gallium nitride (GaN) using the sodium flux method. Though several methods exist to produce bulk GaN, none have been commercialized on an industrial scale. The sodium flux method offers potentially lower cost production due to relatively mild process conditions while maintaining high crystal quality. But the current equipment and methods for sodium flux growth of bulk GaN are generally not amenable to large-scale crystal growth or in situ investigation of growth processes, which has hampered progress. A key task was to prevent sodium loss or migration from the sodium-gallium growth melt while permitting N2 gas to access the growing crystal, which was accomplished by implementing a reflux condensing stem along with a reusable sealed capsule. The reflux condensing stem also enabled direct monitoring and control of the melt temperature, which has not been previously reported for the sodium flux method. Molybdenum-based materials were identified from a corrosion study as candidates for direct containment of the corrosive sodium-gallium melt. Successful introduction of these materials allowed implementation of a crucible-free containment system, which improved process control and can potentially reduce crystal impurity levels. Using the new growth system, the (0001) Ga face (+c plane) growth rate was >50 mum/hr, which is the highest bulk GaN growth rate reported for the sodium flux method. Omega X-ray rocking curve (?-XRC) measurements indicated the presence of multiple grains, though full width at half maximum (FWHM) values for individual peaks were 1020 atoms/cm3, possibly due to reactor cleaning and handling procedures. This dissertation also introduced an in situ technique to correlate changes in N2 pressure with dissolution of nitrogen and precipitation of GaN from the sodium-gallium melt. Different stages of N2 pressure decay were identified and linked to

Optical characterization of gallium nitride

NARCIS (Netherlands)

Kirilyuk, Victoria

2002-01-01

Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

Gallium

Science.gov (United States)

Foley, Nora K.; Jaskula, Brian W.; Kimball, Bryn E.; Schulte, Ruth F.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. Gallium is used in a wide variety of products that have microelectronic components containing either gallium arsenide (GaAs) or gallium nitride (GaN). GaAs is able to change electricity directly into laser light and is used in the manufacture of optoelectronic devices (laser diodes, light-emitting diodes [LEDs], photo detectors, and solar cells), which are important for aerospace and telecommunications applications and industrial and medical equipment. GaAs is also used in the production of highly specialized integrated circuits, semiconductors, and transistors; these are necessary for defense applications and high-performance computers. For example, cell phones with advanced personal computer-like functionality (smartphones) use GaAs-rich semiconductor components. GaN is used principally in the manufacture of LEDs and laser diodes, power electronics, and radio-frequency electronics. Because GaN power transistors operate at higher voltages and with a higher power density than GaAs devices, the uses for advanced GaN-based products are expected to increase in the future. Gallium technologies also have large power-handling capabilities and are used for cable television transmission, commercial wireless infrastructure, power electronics, and satellites. Gallium is also used for such familiar applications as screen backlighting for computer notebooks, flat-screen televisions, and desktop computer monitors.Gallium is dispersed in small amounts in many minerals and rocks where it substitutes for elements of similar size and charge, such as aluminum and zinc. For example, gallium is found in small amounts (about 50 parts per million) in such aluminum-bearing minerals as diaspore-boehmite and gibbsite, which form bauxite deposits, and in the zinc-sulfide mineral sphalerite, which is found in many mineral deposits. At the present time, gallium metal is derived mainly as a

Discovery of earth-abundant nitride semiconductors by computational screening and high-pressure synthesis

Science.gov (United States)

Hinuma, Yoyo; Hatakeyama, Taisuke; Kumagai, Yu; Burton, Lee A.; Sato, Hikaru; Muraba, Yoshinori; Iimura, Soshi; Hiramatsu, Hidenori; Tanaka, Isao; Hosono, Hideo; Oba, Fumiyasu

2016-01-01

Nitride semiconductors are attractive because they can be environmentally benign, comprised of abundant elements and possess favourable electronic properties. However, those currently commercialized are mostly limited to gallium nitride and its alloys, despite the rich composition space of nitrides. Here we report the screening of ternary zinc nitride semiconductors using first-principles calculations of electronic structure, stability and dopability. This approach identifies as-yet-unreported CaZn2N2 that has earth-abundant components, smaller carrier effective masses than gallium nitride and a tunable direct bandgap suited for light emission and harvesting. High-pressure synthesis realizes this phase, verifying the predicted crystal structure and band-edge red photoluminescence. In total, we propose 21 promising systems, including Ca2ZnN2, Ba2ZnN2 and Zn2PN3, which have not been reported as semiconductors previously. Given the variety in bandgaps of the identified compounds, the present study expands the potential suitability of nitride semiconductors for a broader range of electronic, optoelectronic and photovoltaic applications. PMID:27325228

Solvothermal synthesis: a new route for preparing nitrides

CERN Document Server

Demazeau, G; Denis, A; Largeteau, A

2002-01-01

Solvothermal synthesis appears to be an interesting route for preparing nitrides such as gallium nitride and aluminium nitride, using ammonia as solvent. A nitriding additive is used to perform the reaction and, in the case of gallium nitride, is encapsulated by melt gallium. The syntheses are performed in the temperature range 400-800 deg. C and in the pressure range 100-200 MPa. The synthesized powders are characterized by x-ray diffraction and scanning electron microscopy. Finely divided gallium nitride GaN and aluminium nitride AlN, both with wurtzite-type structure, can be obtained by this route.

Gallium nitride based thin films for photon and particle radiation dosimetry

Energy Technology Data Exchange (ETDEWEB)

Hofstetter, Markus

2012-07-23

Ionization chambers have been used since the beginning of the 20th century for measuring ionizing radiation and still represent the ''gold standard'' in dosimetry. However, since the sensitivity of the devices is proportional to the detection volume, ionization chambers are not common in numerous medical applications, such as imaging. In these fields, spatially resolved dose information is, beside film-systems, usually measured with scintillators and photo-multipliers, which is a relatively complex and expensive technique. For thus much effort has been focused on the development of novel detection systems in the last decades and especially in the last few years. Examples include germanium or silicon photoconductive detectors, MOSFETs, and PIN-diodes. Although for these systems, miniaturization for spatially resolved detection is possible, they suffer from a range of disadvantages. Characteristics such as poor measurement stability, material degradation, and/or a limited measurement range prevent routine application of these techniques in medical diagnostic devices. This work presents the development and evaluation of gallium nitride (GaN) thin films and heterostructures to validate their application in x-ray detection in the medical regime. Furthermore, the impact of particle radiation on device response was investigated. Although previous publications revealed relatively low energy absorption of GaN, it is possible to achieve very high signal amplification factors inside the material due to an appropriate sensor configuration, which, in turn, compensates the low energy absorption. Thus, gallium nitride can be used as a photo-conductor with ohmic contacts. The conductive volume of the sensor changes in the presence of external radiation, which results in an amplified measurement signal after applying a bias voltage to the device. Experiments revealed a sensitivity of the device between air kerma rates of 1 {mu}Gy/s and 20 mGy/s. In this range

Piezoelectric effect on the thermal conductivity of monolayer gallium nitride

Science.gov (United States)

Zhang, Jin

2018-01-01

Using molecular dynamics and density functional theory simulations, in this work, we find that the heat transport property of the monolayer gallium nitride (GaN) can be efficiently tailored by external electric field due to its unique piezoelectric characteristic. As the monolayer GaN possesses different piezoelectric properties in armchair and zigzag directions, different effects of the external electric field on thermal conductivity are observed when it is applied in the armchair and zigzag directions. Our further study reveals that due to the elastoelectric effect in the monolayer GaN, the external electric field changes the Young's modulus and therefore changes the phonon group velocity. Also, due to the inverse piezoelectric effect, the applied electric field induces in-plane stress in the monolayer GaN subject to a length constraint, which results in the change in the lattice anharmonicity and therefore affects the phonon mean free path. Furthermore, for relatively long GaN monolayers, the in-plane stress may trigger the buckling instability, which can significantly reduce the phonon mean free path.

Combined angle-resolved X-ray photoelectron spectroscopy, density functional theory and kinetic study of nitridation of gallium arsenide

Science.gov (United States)

Mehdi, H.; Monier, G.; Hoggan, P. E.; Bideux, L.; Robert-Goumet, C.; Dubrovskii, V. G.

2018-01-01

The high density of interface and surface states that cause the strong Fermi pinning observed on GaAs surfaces can be reduced by depositing GaN ultra-thin films on GaAs. To further improve this passivation, it is necessary to investigate the nitridation phenomena by identifying the distinct steps occurring during the process and to understand and quantify the growth kinetics of GaAs nitridation under different conditions. Nitridation of the cleaned GaAs substrate was performed using N2 plasma source. Two approaches have been combined. Firstly, an AR-XPS (Angle Resolved X-ray Photoelectron Spectroscopy) study is carried out to determine the chemical environments of the Ga, As and N atoms and the composition depth profile of the GaN thin film which allow us to summarize the nitridation process in three steps. Moreover, the temperature and time treatment have been investigated and show a significant impact on the formation of the GaN layer. The second approach is a refined growth kinetic model which better describes the GaN growth as a function of the nitridation time. This model clarifies the exchange mechanism of arsenic with nitrogen atoms at the GaN/GaAs interface and the phenomenon of quasi-saturation of the process observed experimentally.

Selective growth of gallium nitride nanowires by femtosecond laser patterning

International Nuclear Information System (INIS)

Ng, D.K.T.; Hong, M.H.; Tan, L.S.; Zhou, Y.; Chen, G.X.

2008-01-01

We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices

Selective growth of gallium nitride nanowires by femtosecond laser patterning

Energy Technology Data Exchange (ETDEWEB)

Ng, D.K.T. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Hong, M.H. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore)], E-mail: HONG_Minghui@dsi.a-star.edu.sg; Tan, L.S. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore); Zhou, Y. [Data Storage Institute, Agency for Science, Technology and Research, DSI Building, 5 Engineering Drive 1, Singapore 117608 (Singapore); Department of Mechanical Engineering, National University of Singapore, 2 Engineering Drive 3, Singapore 117576 (Singapore); Chen, G.X. [Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, Singapore 117576 (Singapore)

2008-01-31

We report on gallium nitride (GaN) nanowires grown using pulsed laser ablation, adopting the vapor-liquid-solid (VLS) growth mechanism. The GaN nanowires are obtained based on the principle that a catalyst is required to initiate the nanowires growth. Locations of the GaN nanowires are patterned using femtosecond laser and focused ion beam. Scanning electron microscopy (SEM) is used to characterize the nanowires. This patterning of GaN nanowires will enable selective growth of nanowires and bottom-up assembly of integrated electronic and photonic devices.

Chemical exfoliation and optical characterization of threading-dislocation-free gallium-nitride ultrathin nanomembranes

KAUST Repository

Elafandy, Rami T.

2014-11-13

Semiconductor nanostructures have generated tremendous scientific interests as well as practical applications stemming from the engineering of low dimensional physics phenomena. Unlike 0D and 1D nanostructures, such as quantum dots and nanowires, respectively, 2D structures, such as nanomembranes, are unrivalled in their scalability for high yield manufacture and are less challenging in handling with the current transfer techniques. Furthermore, due to their planar geometry, nanomembranes are compatible with the current complementary metal oxide semiconductor (CMOS) technology. Due to these superior characteristics, there are currently different techniques in exfoliating nanomembranes with different crystallinities, thicknesses and compositions. In this work we demonstrate a new facile technique of exfoliating gallium nitride (GaN) nanomembranes with novel features, namely with the non-radiative cores of their threading-dislocations (TDs) being etched away. The exfoliation process is based on engineering the gallium vacancy (VGa) density during the GaN epitaxial growth with subsequent preferential etching. Based on scanning and transmission electron microscopies, as well as micro-photoluminescence measurements, a model is proposed to uncover the physical processes underlying the formation of the nanomembranes. Raman measurements are also performed to reveal the internal strain within the nanomembranes. After transferring these freely suspended 25 nm thin GaN nanomembranes to other substrates, we demonstrate the temperature dependence of their bandgap by photoluminescence technique, in order to shed light on the internal carrier dynamics. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD

International Nuclear Information System (INIS)

Brendt, Jochen

2011-01-01

Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

Electron-phonon relaxation and excited electron distribution in gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Zhukov, V. P. [Institute of Solid State Chemistry, Urals Branch of the Russian Academy of Sciences, Pervomayskaya st. 91, Yekaterinburg (Russian Federation); Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tyuterev, V. G., E-mail: valtyut00@mail.ru [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State Pedagogical University, Kievskaya st. 60, Tomsk (Russian Federation); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Chulkov, E. V. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Tomsk State University, Lenin st. 36, Tomsk (Russian Federation); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain); Echenique, P. M. [Donostia International Physics Center (DIPC), P. Manuel de Lardizabal 4, 20018 San Sebastian (Spain); Departamento de Fisica de Materiales, Facultad de Ciencias Qumicas, UPV/EHU and Centro de Fisica de Materiales CFM-MPC and Centro Mixto CSIC-UPV/EHU, Apdo. 1072, 20080 San Sebastian (Spain)

2016-08-28

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates of inter-band recombination, and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy “tail” largely covers the conduction band. The shape of the high-energy “tail” strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in an irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of the electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi “tail” is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can essentially affect the charge transport in the irradiated and highly doped semiconductors.

Design and Implementation of a High-Flux Photoneutron Converter for Analysis of Fast Neutron Radiation Damage on Gallium Nitride Transistors

Science.gov (United States)

2017-06-01

as the polarization and 2DEG control between aluminum gallium nitride (AlGaN) and GaN layers. Third, the physical and electrical properties of...electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures,” Journal of Applied Physics , vol...relationship of the electrical and physical characteristics of the devices with respect to the fast neutron fluence. The damage was also analyzed using

High-efficiency and low-loss gallium nitride dielectric metasurfaces for nanophotonics at visible wavelengths

Science.gov (United States)

Emani, Naresh Kumar; Khaidarov, Egor; Paniagua-Domínguez, Ramón; Fu, Yuan Hsing; Valuckas, Vytautas; Lu, Shunpeng; Zhang, Xueliang; Tan, Swee Tiam; Demir, Hilmi Volkan; Kuznetsov, Arseniy I.

2017-11-01

The dielectric nanophotonics research community is currently exploring transparent material platforms (e.g., TiO2, Si3N4, and GaP) to realize compact high efficiency optical devices at visible wavelengths. Efficient visible-light operation is key to integrating atomic quantum systems for future quantum computing. Gallium nitride (GaN), a III-V semiconductor which is highly transparent at visible wavelengths, is a promising material choice for active, nonlinear, and quantum nanophotonic applications. Here, we present the design and experimental realization of high efficiency beam deflecting and polarization beam splitting metasurfaces consisting of GaN nanostructures etched on the GaN epitaxial substrate itself. We demonstrate a polarization insensitive beam deflecting metasurface with 64% and 90% absolute and relative efficiencies. Further, a polarization beam splitter with an extinction ratio of 8.6/1 (6.2/1) and a transmission of 73% (67%) for p-polarization (s-polarization) is implemented to demonstrate the broad functionality that can be realized on this platform. The metasurfaces in our work exhibit a broadband response in the blue wavelength range of 430-470 nm. This nanophotonic platform of GaN shows the way to off- and on-chip nonlinear and quantum photonic devices working efficiently at blue emission wavelengths common to many atomic quantum emitters such as Ca+ and Sr+ ions.

Development of III-nitride semiconductors by molecular beam epitaxy and cluster beam epitaxy and fabrication of LEDs based on indium gallium nitride MQWs

Science.gov (United States)

Chen, Tai-Chou Papo

The family of III-Nitrides (the binaries InN, GaN, AIN, and their alloys) is one of the most important classes of semiconductor materials. Of the three, Indium Nitride (InN) and Aluminum Nitride (AIN) have been investigated much less than Gallium Nitride (GaN). However, both of these materials are important for optoelectronic infrared and ultraviolet devices. In particular, since InN was found recently to be a narrow gap semiconductor (Eg=0.7eV), its development should extend the applications of nitride semiconductors to the spectral region appropriate to fiber optics communication and photovoltaic applications. Similarly, the development of AIN should lead to deep UV light emitting diodes (LEDs). The first part of this work addresses the evaluation of structural, optical and transport properties of InN films grown by two different deposition methods. In one method, active nitrogen was produced in the form of nitrogen radicals by a radio frequency (RF) plasma-assisted source. In an alternative method, active nitrogen was produced in the form of clusters containing approximately 2000 nitrogen molecules. These clusters were produced by adiabatic expansion from high stagnation pressure through a narrow nozzle into vacuum. The clusters were singly or doubly ionized with positive charge by electron impact and accelerated up to approximately 20 to 25 KV prior to their disintegration on the substrate. Due to the high local temperature produced during the impact of clusters with the substrate, this method is suitable for the deposition of InN at very low temperatures. The films are auto-doped n-type with carrier concentrations varying from 3 x 1018 to 1020 cm-3 and the electron effective mass of these films was determined to be 0.09m0. The majority of the AIN films was grown by the cluster beam epitaxy method and was doped n- and p- type by incorporating silicon (Si) and magnesium (Mg) during the film deposition. All films were grown under Al-rich conditions at relatively

Development of microwave amplifier based on gallium nitride semiconductor structures

International Nuclear Information System (INIS)

Pavlov, D.Yi.; Prokopenko, O.V.; Tsvyirko, Yu.A.; Pavlov, Yi.L.

2014-01-01

Microwave properties of microwave amplifier based on gallium nitride (GN) semiconductor structures has been calculated numerically. We proposed the method of numerical calculation of device. This method is accurately sets the value of its characteristics depending on the elements that are used in design of amplifier. It is shown that the device based on GN HEMT-transistors could have amplification factor about 50 dB, while its sizes are 27x18x5.5 mm 3 . Also was provided the absolute stability an amplifier in the whole operating frequency range. It is quite important when using this type of amplifiers in different conditions of exploitation and various fields of use the radioelectronic equipment

Impurity decoration of native vacancies in Ga and N sublattices of gallium nitride

OpenAIRE

Hautakangas, Sami

2005-01-01

The effects of impurity atoms as well as various growth methods to the formation of vacancy type defects in gallium nitride (GaN) have been studied by positron annihilation spectroscopy. It is shown that vacancy defects are formed in Ga or N sublattices depending on the doping of the material. Vacancies are decorated with impurity atoms leading to the compensation of the free carriers of the samples. In addition, the vacancy clusters are found to be present in significant concentrations in n-...

Process Development of Gallium Nitride Phosphide Core-Shell Nanowire Array Solar Cell

Science.gov (United States)

Chuang, Chen

Dilute Nitride GaNP is a promising materials for opto-electronic applications due to its band gap tunability. The efficiency of GaNxP1-x /GaNyP1-y core-shell nanowire solar cell (NWSC) is expected to reach as high as 44% by 1% N and 9% N in the core and shell, respectively. By developing such high efficiency NWSCs on silicon substrate, a further reduction of the cost of solar photovoltaic can be further reduced to 61$/MWh, which is competitive to levelized cost of electricity (LCOE) of fossil fuels. Therefore, a suitable NWSC structure and fabrication process need to be developed to achieve this promising NWSC. This thesis is devoted to the study on the development of fabrication process of GaNxP 1-x/GaNyP1-y core-shell Nanowire solar cell. The thesis is divided into two major parts. In the first parts, previously grown GaP/GaNyP1-y core-shell nanowire samples are used to develop the fabrication process of Gallium Nitride Phosphide nanowire solar cell. The design for nanowire arrays, passivation layer, polymeric filler spacer, transparent col- lecting layer and metal contact are discussed and fabricated. The property of these NWSCs are also characterized to point out the future development of Gal- lium Nitride Phosphide NWSC. In the second part, a nano-hole template made by nanosphere lithography is studied for selective area growth of nanowires to improve the structure of core-shell NWSC. The fabrication process of nano-hole templates and the results are presented. To have a consistent features of nano-hole tem- plate, the Taguchi Method is used to optimize the fabrication process of nano-hole templates.

Effects of Radiation and Long-Term Thermal Cycling on EPC 1001 Gallium Nitride Transistors

Science.gov (United States)

Patterson, Richard L.; Scheick, Leif; Lauenstein, Jean-Marie; Casey, Megan; Hammoud, Ahmad

2012-01-01

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Data obtained on long-term thermal cycling of new un-irradiated and irradiated samples of EPC1001 gallium nitride enhancement-mode transistors are presented. This work was done by a collaborative effort including GRC, GSFC, and support the NASA www.nasa.gov 1 JPL in of Electronic Parts and Packaging (NEPP) Program

Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

Science.gov (United States)

Rodak, L. E.; Korakakis, D.

2011-04-01

This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

The Effects of Thermal Cycling on Gallium Nitride and Silicon Carbide Semiconductor Devices for Aerospace Use

Science.gov (United States)

Patterson, Richard L.; Hammoud, Ahmad

2012-01-01

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These Include radiation, extreme temperatures, thermal cycling, to name a few. Preliminary data obtained on new Gallium Nitride and Silicon Carbide power devices under exposure to radiation followed by long term thermal cycling are presented. This work was done in collaboration with GSFC and JPL in support of the NASA Electronic Parts and Packaging (NEPP) Program

Two-dimensional dopant profiling of gallium nitride p-n junctions by scanning capacitance microscopy

Science.gov (United States)

Lamhamdi, M.; Cayrel, F.; Frayssinet, E.; Bazin, A. E.; Yvon, A.; Collard, E.; Cordier, Y.; Alquier, D.

2016-04-01

Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p-n and unipolar junctions. For both p-n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p-n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

Energy Technology Data Exchange (ETDEWEB)

Lamhamdi, M. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France); Ecole national des sciences appliquées khouribga, Université Hassan 1er, 26000 Settat (Morocco); Cayrel, F. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France); Frayssinet, E. [CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne (France); Bazin, A.E.; Yvon, A.; Collard, E. [STMicroelectronics, 16 Rue Pierre et Marie Curie, BP 7155, 37071 Tours (France); Cordier, Y. [CRHEA-CNRS, Rue Bernard Grégory, Sophia Antipolis, 06560 Valbonne (France); Alquier, D. [GREMAN UMR 7347-Université de Tours, 10 Rue Thales de Milet, BP 7155, 37071 Tours (France)

2016-04-01

Two-dimensional imaging of dopant profiles for n and p-type regions are relevant for the development of new power semiconductors, especially for gallium nitride (GaN) for which classical profiling techniques are not adapted. This is a challenging task since it needs a technique with simultaneously good sensitivity, high spatial resolution and high dopant gradient resolution. To face these challenges, scanning capacitance microscopy combined with Atomic Force Microscopy is a good candidate, presenting reproducible results, as demonstrated in literature. In this work, we attempt to distinguish reliably and qualitatively the various doping concentrations and type at p–n and unipolar junctions. For both p–n and unipolar junctions three kinds of samples were prepared and measured separately. The space-charge region of the p–n metallurgical junction, giving rise to different contrasts under SCM imaging, is clearly observed, enlightening the interest of the SCM technique.

Photoelectrochemical etching of gallium nitride surface by complexation dissolution mechanism

Energy Technology Data Exchange (ETDEWEB)

Zhang, Miao-Rong [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); University of Chinese Academy of Sciences, 100049 Beijing (China); Hou, Fei; Wang, Zu-Gang; Zhang, Shao-Hui [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China); Changchun University of Science and Technology, 130022 Changchun (China); Pan, Ge-Bo, E-mail: gbpan2008@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, 215123 Suzhou (China)

2017-07-15

Graphical abstract: GaN surface was etched by 0.3 M EDTA-2Na. The proposed complexation dissolution mechanism can be applicable to almost all neutral etchants under the prerequisite of strong light and electric field. - Highlights: • GaN surface was etched by EDTA-2Na. • GaN may be dissolved into EDTA-2Na by forming Ga–EDTA complex. • We propose the complexation dissolution mechanism for the first time. - Abstract: Gallium nitride (GaN) surface was etched by 0.3 M ethylenediamine tetraacetic acid disodium (EDTA-2Na) via photoelectrochemical etching technique. SEM images reveal the etched GaN surface becomes rough and irregular. The pore density is up to 1.9 × 10{sup 9} per square centimeter after simple acid post-treatment. The difference of XPS spectra of Ga 3d, N 1s and O 1s between the non-etched and freshly etched GaN surfaces can be attributed to the formation of Ga–EDTA complex at the etching interface between GaN and EDTA-2Na. The proposed complexation dissolution mechanism can be broadly applicable to almost all neutral etchants under the prerequisite of strong light and electric field. From the point of view of environment, safety and energy, EDTA-2Na has obvious advantages over conventionally corrosive etchants. Moreover, as the further and deeper study of such nearly neutral etchants, GaN etching technology has better application prospect in photoelectric micro-device fabrication.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

Science.gov (United States)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Nitride-based quantum structures and devices on modified GaN substrates

International Nuclear Information System (INIS)

Perlin, Piotr; Leszczynski, Mike; Grzegory, Izabella; Franssen, Gijs; Targowski, Grzegorz; Krysko, Marcin; Nowak, Grzegorz; Litwin-Staszewska, Elzbieta; Piotrzkowski, Ryszard; Lucznik, Bolek; Suski, Tadek; Szeszko, Justyna; Czernecki, R.; Grzanka, Szymon; Jakiela, Rafal; Albrecht, Martin

2009-01-01

We have studied the properties of InGaN layers and quantum wells grown on gallium nitride substrates with intentional surface misorientation with respect to its crystalline c-axis. Misorientation varied in the range from 0 up to 2 degree. The indium content was changed by using the different growth temperature (between 750 C and 820 C) during metalorganic vapor phase epitaxy. With increasing misorientation angle the average indium content decreased significantly. This effect was accompanied by the strong increase of the emission line bandwidth suggesting more pronounced indium segregation. The results of cathodoluminescence measurements show that these effects correspond to different number of atomic steps/terraces existing on the surface of gallium nitride substrate. Very interesting result is also demonstrated concerning p-type GaN layers. With increasing misorientation, the free hole density drastically increases above 10 18 cm -3 . This improvement in p-type doping is not related to the increased Mg concentration but to the reduction in the compensating donor density. Using this advantage we demonstrate nitride light emitters with improved electrical properties. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Optical polarization based logic functions (XOR or XNOR) with nonlinear Gallium nitride nanoslab.

Science.gov (United States)

Bovino, F A; Larciprete, M C; Giardina, M; Belardini, A; Centini, M; Sibilia, C; Bertolotti, M; Passaseo, A; Tasco, V

2009-10-26

We present a scheme of XOR/XNOR logic gate, based on non phase-matched noncollinear second harmonic generation from a medium of suitable crystalline symmetry, Gallium nitride. The polarization of the noncollinear generated beam is a function of the polarization of both pump beams, thus we experimentally investigated all possible polarization combinations, evidencing that only some of them are allowed and that the nonlinear interaction of optical signals behaves as a polarization based XOR. The experimental results show the peculiarity of the nonlinear optical response associated with noncollinear excitation, and are explained using the expression for the effective second order optical nonlinearity in noncollinear scheme.

State and prospects of Russian and world gallium market

Directory of Open Access Journals (Sweden)

F. D. Larichkin

2017-12-01

Full Text Available The authors consider the state of Russian and world mineral and raw materials base of gallium, the main spheres of application in various branches and industries of the national economy. The article presents the generalization and analysis of trends in world and Russian production, consumption of rare metal and its compounds, the world trade and global market of gallium and products based on it, consuming it in new science-intensive innovative industries, including the production of military equipment. The unique chemical properties of gallium remained unclaimed for a long time. Only after the discovery of the semiconductor properties of gallium compounds has the situation radically changed: the rate of growth in production and consumption of metallic gallium at the end of the twentieth and beginning of the 21st century amounted to an average of more than 8% per year. The largest area of consumption of gallium is the production of semiconductor materials – gallium arsenide (GaAs and gallium nitride (GaN. The areas of application of gallium not related to the semiconductor industry are very small. Industry structure of consumption of GaAs and GaN: in integrated circuits is 66%; optoelectronic devices (light-emitting diodes, laser diodes, photodetectors and solar batteries – 20%; the remaining 14% – scientific research, special alloys, etc. Optoelectronic devices are used in aerospace industry, consumer goods, industrial and medical equipment and telecommunications. Integral circuits are used in the military industry, high-power computers and electronic communications. The most significant growing sectors of the market are LEDs, electronics based on gallium nitride and solar cells. Solar energy has become the fastest growing branch of the world economy. The volumes of gallium production in Russia do not correspond to its raw material, scientific and technological potential as the country and require the development activation based on state

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2015-01-01

Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

International Nuclear Information System (INIS)

Lin, Y. H.; Chou, J. C.

2015-01-01

We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

PLD synthesis of GaN nanowires and nanodots on patterned catalyst surface for field emission study

Energy Technology Data Exchange (ETDEWEB)

Ng, D.K.T.; Hong, M.H. [National University of Singapore (Singapore). Department of Electrical and Computer Engineering; Data Storage Institute, Singapore (Singapore); Tan, L.S. [National University of Singapore (Singapore). Department of Electrical and Computer Engineering; Zhu, Y.W.; Sow, C.H. [National University of Singapore (Singapore). Nanoscience and Nanotechnology Initiative; National University of Singapore (Singapore). Department of Physics

2008-11-15

Patterned gallium nitride nanowires and nanodots have been grown on n-Si(100) substrates by pulsed laser deposition. The nanostructures are patterned using a physical mask, resulting in regions of nanowire growth of different densities. The field emission (FE) characteristics of the patterned gallium nitride nanowires show a turn-on field of 9.06 V/{mu}m to achieve a current density of 0.01 mA/cm{sup 2} and an enhanced field emission current density as high as 0.156 mA/cm{sup 2} at an applied field of 11 V/{mu}m. Comparing the peak FE current densities of both the nanowires and nanodots, the peak FE current density of nanowires is around 700 times higher than that of the peak FE current density of nanodots since nanodots have a lower aspect ratio compared to nanowires. The field emission results indicate that, besides density difference, crystalline quality as well as the low electron affinity of gallium nitride, high aspect ratio of gallium nitride nanostructures will greatly enhance their field emission properties. (orig.)

Gallium nitride vertical power devices on foreign substrates: a review and outlook

Science.gov (United States)

Zhang, Yuhao; Dadgar, Armin; Palacios, Tomás

2018-07-01

Vertical gallium nitride (GaN) power devices have attracted increased attention due to their superior high-voltage and high-current capacity as well as easier thermal management than lateral GaN high electron mobility transistors. Vertical GaN devices are promising candidates for next-generation power electronics in electric vehicles, data centers, smart grids and renewable energy process. The use of low-cost foreign substrates such as silicon (Si) substrates, instead of the expensive free-standing GaN substrates, could greatly trim material cost and enable large-diameter wafer processing while maintaining high device performance. This review illustrates recent progress in material epitaxy, device design, device physics and processing technologies for the development of vertical GaN power devices on low-cost foreign substrates. Although the device technologies are still at the early stage of development, state-of-the-art vertical GaN-on-Si power diodes have already shown superior Baliga’s figure of merit than commercial SiC and Si power devices at the voltage classes beyond 600 V. Furthermore, we unveil the design space of vertical GaN power devices on native and different foreign substrates, from the analysis of the impact of dislocation and defects on device performance. We conclude by identifying the application space, current challenges and exciting research opportunities in this very dynamic research field.

Radiation and Thermal Cycling Effects on EPC1001 Gallium Nitride Power Transistors

Science.gov (United States)

Patterson, Richard L.; Scheick, Leif Z.; Lauenstein, Jean M.; Casey, Megan C.; Hammoud, Ahmad

2012-01-01

Electronics designed for use in NASA space missions are required to work efficiently and reliably under harsh environment conditions. These include radiation, extreme temperatures, and thermal cycling, to name a few. Information pertaining to performance of electronic parts and systems under hostile environments is very scarce, especially for new devices. Such data is very critical so that proper design is implemented in order to ensure mission success and to mitigate risks associated with exposure of on-board systems to the operational environment. In this work, newly-developed enhancement-mode field effect transistors (FET) based on gallium nitride (GaN) technology were exposed to various particles of ionizing radiation and to long-term thermal cycling over a wide temperature range. Data obtained on control (un-irradiated) and irradiated samples of these power transistors are presented and the results are discussed.

A first principle study of band structure of III-nitride compounds

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Rashid [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)]. E-mail: rasofi@hotmail.com; Akbarzadeh, H. [Department of Physics, Isfahan University of Technology, 841546 Isfahan (Iran, Islamic Republic of); Fazal-e-Aleem [Centre for High Energy Physics University of the Punjab, Lahore-54590 (Pakistan)

2005-12-15

The band structure of both phases, zinc-blende and wurtzite, of aluminum nitride, indium nitride and gallium nitride has been studied using computational methods. The study has been done using first principle full-potential linearized augmented plane wave (FP-LAPW) method, within the framework of density functional theory (DFT). For the exchange correlation potential, generalized gradient approximation (GGA) and an alternative form of GGA proposed by Engel and Vosko (GGA-EV) have been used. Results obtained for band structure of these compounds have been compared with experimental results as well as other first principle computations. Our results show a significant improvement over other theoretical work and are closer to the experimental data.

Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

KAUST Repository

Ng, Tien Khee; Zhao, Chao; Priante, Davide; Ooi, Boon S.; Hussein, Mohamed Ebaid Abdrabou

2018-01-01

Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

Molecular coatings of nitride semiconductors for optoelectronics, electronics, and solar energy harvesting

KAUST Repository

Ng, Tien Khee

2018-02-01

Gallium nitride based semiconductors are provided having one or more passivated surfaces. The surfaces can have a plurality of thiol compounds attached thereto for enhancement of optoelectronic properties and/or solar water splitting properties. The surfaces can also include wherein the surface has been treated with chemical solution for native oxide removal and / or wherein the surface has attached thereto a plurality of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof to create a treated surface for enhancement of optoelectronic properties and / or solar water splitting properties. Methods of making the gallium nitride based semiconductors are also provided. Methods can include cleaning a native surface of a gallium nitride semiconductor to produce a cleaned surface, etching the cleaned surface to remove oxide layers on the surface, and applying single or multiple coatings of nitrides, oxides, insulating compounds, thiol compounds, or a combination thereof attached to the surface.

Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

Energy Technology Data Exchange (ETDEWEB)

Maroldt, Stephan

2012-07-01

Highly-efficient switch-mode power amplifiers form key elements in future fully-digital base stations for mobile communication. This novel digital base station concept reduces system energy consumption, complexity, size and costs, while the flexibility in terms of multi-band operation and signal modulation improves. In this work, innovative core circuits for digital high-efficiency class-D and class-S power amplifiers based on gallium nitride (GaN) technology were developed for the application in digital base stations. A combination of optimized GaN devices and improvements in circuit design allow a highly-efficient switch-mode operation at mobile communication frequencies between 0.45 GHz and 2 GHz. Transistor device modeling for switch-mode operation, the simulation environment, and a broadband measurement system were established for the design and evaluation of digital switchmode power amplifiers. The design of broadband core circuits for switch-mode amplifier concepts was analyzed for dual-stage amplifier circuits, using an initial GaN technology with a gate length of 0.25 {mu}m. A speed-enhanced driver stage improved the circuit switching speed sufficiently above 1 GHz. Speed and efficiency of the amplifier core circuits were studied related to transistor parameters like cut-off frequency or gate capacitance. A reduced gate length was found to improve the switching speed, while a lower on-resistance allows the reduction of the inherent static losses of the GaN-based switches. Apart from this, the restriction of a 50 Ohm environment was found to be a major output power and switching speed limitation, due to a poor switching drive capability of the input capacitance of the GaN circuit. Finally, the optimized transistor and circuit design with an output gate width of 1.2 mm were effectively implemented in the given environment for an operation up to 2 GHz with a high drain efficiency of >65% and a digital output power of 5 W. A maximum output power of 9.7 W and a

Electronic properties of blue phosphorene/graphene and blue phosphorene/graphene-like gallium nitride heterostructures.

Science.gov (United States)

Sun, Minglei; Chou, Jyh-Pin; Yu, Jin; Tang, Wencheng

2017-07-05

Blue phosphorene (BlueP) is a graphene-like phosphorus nanosheet which was synthesized very recently for the first time [Nano Lett., 2016, 16, 4903-4908]. The combination of electronic properties of two different two-dimensional materials in an ultrathin van der Waals (vdW) vertical heterostructure has been proved to be an effective approach to the design of novel electronic and optoelectronic devices. Therefore, we used density functional theory to investigate the structural and electronic properties of two BlueP-based heterostructures - BlueP/graphene (BlueP/G) and BlueP/graphene-like gallium nitride (BlueP/g-GaN). Our results showed that the semiconducting nature of BlueP and the Dirac cone of G are well preserved in the BlueP/G vdW heterostructure. Moreover, by applying a perpendicular electric field, it is possible to tune the position of the Dirac cone of G with respect to the band edge of BlueP, resulting in the ability to control the Schottky barrier height. For the BlueP/g-GaN vdW heterostructure, BlueP forms an interface with g-GaN with a type-II band alignment, which is a promising feature for unipolar electronic device applications. Furthermore, we discovered that both G and g-GaN can be used as an active layer for BlueP to facilitate charge injection and enhance the device performance.

Platinum nanoparticles on gallium nitride surfaces: effect of semiconductor doping on nanoparticle reactivity.

Science.gov (United States)

Schäfer, Susanne; Wyrzgol, Sonja A; Caterino, Roberta; Jentys, Andreas; Schoell, Sebastian J; Hävecker, Michael; Knop-Gericke, Axel; Lercher, Johannes A; Sharp, Ian D; Stutzmann, Martin

2012-08-01

Platinum nanoparticles supported on n- and p-type gallium nitride (GaN) are investigated as novel hybrid systems for the electronic control of catalytic activity via electronic interactions with the semiconductor support. In situ oxidation and reduction were studied with high pressure photoemission spectroscopy. The experiments revealed that the underlying wide-band-gap semiconductor has a large influence on the chemical composition and oxygen affinity of supported nanoparticles under X-ray irradiation. For as-deposited Pt cuboctahedra supported on n-type GaN, a higher fraction of oxidized surface atoms was observed compared to cuboctahedral particles supported on p-type GaN. Under an oxygen atmosphere, immediate oxidation was recorded for nanoparticles on n-type GaN, whereas little oxidation was observed for nanoparticles on p-type GaN. Together, these results indicate that changes in the Pt chemical state under X-ray irradiation depend on the type of GaN doping. The strong interaction between the nanoparticles and the support is consistent with charge transfer of X-ray photogenerated free carriers at the semiconductor-nanoparticle interface and suggests that GaN is a promising wide-band-gap support material for photocatalysis and electronic control of catalysis.

Surface cleaning procedures for thin films of indium gallium nitride grown on sapphire

Energy Technology Data Exchange (ETDEWEB)

Douglass, K.; Hunt, S. [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Teplyakov, A., E-mail: andrewt@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716 (United States); Opila, R.L. [Department of Material Science and Engineering, University of Delaware, Newark, DE 19716 (United States)

2010-12-15

Surface preparation procedures for indium gallium nitride (InGaN) thin films were analyzed for their effectiveness for carbon and oxide removal as well as for the resulting surface roughness. Aqua regia (3:1 mixture of concentrated hydrochloric acid and concentrated nitric acid, AR), hydrofluoric acid (HF), hydrochloric acid (HCl), piranha solution (1:1 mixture of sulfuric acid and 30% H{sub 2}O{sub 2}) and 1:9 ammonium sulfide:tert-butanol were all used along with high temperature anneals to remove surface contamination. X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) were utilized to study the extent of surface contamination and surface roughness, respectively. The ammonium sulfide treatment provided the best overall removal of oxygen and carbon. Annealing over 700 deg. C after a treatment showed an even further improvement in surface contamination removal. The piranha treatment resulted in the lowest residual carbon, while the ammonium sulfide treatment leads to the lowest residual oxygen. AFM data showed that all the treatments decreased the surface roughness (with respect to as-grown specimens) with HCl, HF, (NH{sub 4}){sub 2}S and RCA procedures giving the best RMS values ({approx}0.5-0.8 nm).

Performance analysis and simulation of vertical gallium nitride nanowire transistors

Science.gov (United States)

Witzigmann, Bernd; Yu, Feng; Frank, Kristian; Strempel, Klaas; Fatahilah, Muhammad Fahlesa; Schumacher, Hans Werner; Wasisto, Hutomo Suryo; Römer, Friedhard; Waag, Andreas

2018-06-01

Gallium nitride (GaN) nanowire transistors are analyzed using hydrodynamic simulation. Both p-body and n-body devices are compared in terms of threshold voltage, saturation behavior and transconductance. The calculations are calibrated using experimental data. The threshold voltage can be tuned from enhancement to depletion mode with wire doping. Surface states cause a shift of threshold voltage and saturation current. The saturation current depends on the gate design, with a composite gate acting as field plate in the p-body device. He joined Bell Laboratories, Murray Hill, NJ, as a Technical Staff Member. In October 2001, he joined the Optical Access and Transport Division, Agere Systems, Alhambra, CA. In 2004, he was appointed an Assistant Professor at ETH Zurich,. Since 2008, at the University of Kassel, Kassel, Germany, and he has been a Professor the Head of the Computational Electronics and Photonics Group, and co-director of CINSaT since 2010. His research interests include computational optoelectronics, process and device design of semiconductor photonic devices, microwave components, and electromagnetics modeling for nanophotonics. Dr. Witzigmann is a senior member of the SPIE and IEEE.

Localized surface plasmon resonances in gold nano-patches on a gallium nitride substrate

International Nuclear Information System (INIS)

D’Antonio, Palma; Vincenzo Inchingolo, Alessio; Perna, Giuseppe; Capozzi, Vito; Stomeo, Tiziana; De Vittorio, Massimo; Magno, Giovanni; Grande, Marco; Petruzzelli, Vincenzo; D’Orazio, Antonella

2012-01-01

In this paper we describe the design, fabrication and characterization of gold nano-patches, deposited on gallium nitride substrate, acting as optical nanoantennas able to efficiently localize the electric field at the metal–dielectric interface. We analyse the performance of the proposed device, evaluating the transmission and the electric field localization by means of a three-dimensional finite difference time domain (FDTD) method. We detail the fabrication protocol and show the morphological characterization. We also investigate the near-field optical transmission by means of scanning near-field optical microscope measurements, which reveal the excitation of a localized surface plasmon resonance at a wavelength of 633 nm, as expected by the FDTD calculations. Such results highlight how the final device can pave the way for the realization of a single optical platform where the active material and the metal nanostructures are integrated together on the same chip. (paper)

Low temperature high density plasma nitriding of stainless steel molds for stamping of oxide glasses

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2016-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a die for mold- and direct-stamping processes of optical oxide glasses. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical oxide-glass elements. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness over 1400 HV within its thickness of 50 μm without any formation of nitrides after plasma nitriding at 693 K for 14.4 ks. This plasma-nitrided mold was utilized for mold-stamping of two colored oxide glass plates at 833 K; these plates were successfully deformed and joined into a single glass plate by this stamping without adhesion or galling of oxide glasses onto the nitrided mold surface.

Variation of crystallinity and stoichiometry in films of gallium oxide, gallium nitride and barium zirconate prepared by means of PLD; Variation von Kristallinitaet und Stoechiometrie in mittels PLD hergestellten Schichten aus Galliumoxid, Galliumnitrid und Bariumzirkonat

Energy Technology Data Exchange (ETDEWEB)

Brendt, Jochen

2011-08-05

Pulsed Laser Deposition (PLD) is an ablation technique for thin film preparation of many materials. The film properties can be well controlled by the process parameters. Therefore, in many cases a given material can be deposited with different properties by changing one or more process parameters. In this thesis thin films of gallium oxide, gallium nitride and barium zirconate were deposited with a large variation in structure and stoichiometry by means of Pulsed Laser Deposition. The characterization of the film crystallinity, phase purity and short range structural order was completed by means of X-ray diffraction and X-ray absorption spectroscopy. The stoichiometry was investigated using electron probe microanalysis. For analyzing the correlation between the structure and stoichiometry with the optical and electrical properties, optical absorption and electrical conductivity measurements were carried out. The investigation of all three material systems showed that very unique properties can be realized when combining an amorphous structure and a non-stoichiometric composition. For example, in amorphous and oxygen deficient gallium oxide an insulator-metal-transition can be induced by partial crystallization of the as prepared phase accomplished by annealing at about 400 C in argon atmosphere (as shown in literature). Furthermore, amorphous and highly non-stoichiometric barium zirconate has the ability to split water molecules to hydrogen and oxygen at room temperature. A detailed analysis of both phenomena has been performed by means of photoemission and transmission electron microscopy in the case of gallium oxide and via X-ray absorption spectroscopy and gas chromatography in the case of barium zirconate.

Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser

International Nuclear Information System (INIS)

Gu, E.; Jeon, C.W.; Choi, H.W.; Rice, G.; Dawson, M.D.; Illy, E.K.; Knowles, M.R.H.

2004-01-01

Gallium nitride (GaN) and sapphire are important materials for fabricating photonic devices such as high brightness light emitting diodes (LEDs). These materials are strongly resistant to wet chemical etching and also, low etch rates restrict the use of dry etching. Thus, to develop alternative high resolution processing and machining techniques for these materials is important in fabricating novel photonic devices. In this work, a repetitively pulsed UV copper vapour laser (255 nm) has been used to machine and dice sapphire, GaN and micro LED devices. Machining parameters were optimised so as to achieve controllable machining and high resolution. For sapphire, well-defined grooves 30 μm wide and 430 μm deep were machined. For GaN, precision features such as holes on a tens of micron length scale have been fabricated. By using this technique, compact micro LED chips with a die spacing 100 and a 430 μm thick sapphire substrate have been successfully diced. Measurements show that the performances of LED devices are not influenced by the UV laser machining. Our results demonstrate that the pulsed UV copper vapour laser is a powerful tool for micromachining and dicing of photonic materials and devices

Epitaxial GaN films by hyperthermal ion-beam nitridation of Ga droplets

Energy Technology Data Exchange (ETDEWEB)

Gerlach, J. W.; Ivanov, T.; Neumann, L.; Hoeche, Th.; Hirsch, D.; Rauschenbach, B. [Leibniz-Institut fuer Oberflaechenmodifizierung (IOM), D-04318 Leipzig (Germany)

2012-06-01

Epitaxial GaN film formation on bare 6H-SiC(0001) substrates via the process of transformation of Ga droplets into a thin GaN film by applying hyperthermal nitrogen ions is investigated. Pre-deposited Ga atoms in well defined amounts form large droplets on the substrate surface which are subsequently nitridated at a substrate temperature of 630 Degree-Sign C by a low-energy nitrogen ion beam from a constricted glow-discharge ion source. The Ga deposition and ion-beam nitridation process steps are monitored in situ by reflection high-energy electron diffraction. Ex situ characterization by x-ray diffraction and reflectivity techniques, Rutherford backscattering spectrometry, and electron microscopy shows that the thickness of the resulting GaN films depends on the various amounts of pre-deposited gallium. The films are epitaxial to the substrate, exhibit a mosaic like, smooth surface topography and consist of coalesced large domains of low defect density. Possible transport mechanisms of reactive nitrogen species during hyperthermal nitridation are discussed and the formation of GaN films by an ion-beam assisted process is explained.

Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

Science.gov (United States)

Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

2017-01-01

The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

Capacitance-Voltage Study on the Effects of Low Energy Electron Radiation on Al(0.27)Ga(0.73)N/GaN High Electron Mobility Transistors

National Research Council Canada - National Science Library

Jarzen, Thomas D

2005-01-01

.... Due to the high radiation tolerance of gallium nitride and a plethora of high temperature, high power and high frequency applications, the prospect that gallium nitride based devices will become key...

A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon-Gallium-Nitride Slot Waveguide Structures.

Science.gov (United States)

Malka, Dror; Danan, Yossef; Ramon, Yehonatan; Zalevsky, Zeev

2016-06-25

In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)-gallium nitride (GaN) slot waveguide structure is presented-to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530-1565 nm) into four output ports with low insertion losses (0.07 dB).

Magnesium acceptor in gallium nitride. II. Koopmans-tuned Heyd-Scuseria-Ernzerhof hybrid functional calculations of its dual nature and optical properties

Science.gov (United States)

Demchenko, D. O.; Diallo, I. C.; Reshchikov, M. A.

2018-05-01

The problem of magnesium acceptor in gallium nitride is that experimental photoluminescence measurements clearly reveal a shallow defect state, while most theoretical predictions favor a localized polaronic defect state. To resolve this contradiction, we calculate properties of magnesium acceptor using the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional, tuned to fulfill the generalized Koopmans condition. We test Koopmans tuning of HSE for defect calculations in GaN using two contrasting test cases: a deep state of gallium vacancy and a shallow state of magnesium acceptor. The obtained parametrization of HSE allows calculations of optical properties of acceptors using neutral defect-state eigenvalues, without relying on corrections due to charged defects in periodic supercells. Optical transitions and vibrational properties of M gGa defect are analyzed to bring the dual (shallow and deep) nature of this defect into accord with experimental photoluminescence measurements of the ultraviolet band in Mg-doped GaN samples.

Formation of gallium nitride templates and freestanding substrates by hydride vapor phase epitaxy for homoepitaxial growth of III-nitride devices

Science.gov (United States)

Williams, Adrian Daniel

Gallium nitride (GaN) is a direct wide band gap semiconductor currently under heavy development worldwide due to interest in its applications in ultra-violet optoelectronics, power electronics, devices operating in harsh environments (high temperature or corrorsive), etc. While a number of devices have been demonstrated with this material and its related alloys, the unavailability of GaN substrates is seen as one of the current major bottlenecks to both material quality and device performance. This dissertation is concerned with the synthesis of high quality GaN substrates by the hydride vapor phase epitaxy method (HVPE). In this work, the flow of growth precursors in a home-built HVPE reactor was modeled by the Navier-Stokes equation and solved by finite element analysis to promote uniformity of GaN on 2'' sapphire substrates. Kinetics of growth was studied and various regimes of growth were identified to establish a methodology for HVPE GaN growth, independent of reactor geometry. GaN templates as well as bulk substrates were fabricated in this work. Realization of freestanding GaN substrates was achieved through discovery of a natural stress-induced method of separating bulk GaN from sapphire via mechanical failure of a low-temperature GaN buffer layer. Such a process eliminates the need for pre- or post-processing of sapphire substrates, as is currently the standard. Stress in GaN-on-sapphire is discussed, with the dominant contributor identified as thermal stress due to thermal expansion coefficient mismatch between the two materials. This thermal stress is analyzed using Stoney's equation and conditions for crack-free growth of thick GaN substrates were identified. An etch-back process for planarizing GaN templates was also developed and successfully applied to rough GaN templates. The planarization of GaN has been mainly addressed by chemo-mechanical polishing (CMP) methods in the literature, with notable shortcomings including the inability to effectively

Structure and Properties of Epitaxial Dielectrics on gallium nitride

Science.gov (United States)

Wheeler, Virginia Danielle

GaN is recognized as a possible material for metal oxide semiconductor field effect transistors (MOSFETs) used in high temperature, high power and high speed electronic applications. However, high gate leakage and low device breakdown voltages limit their use in these applications. The use of high-kappa dielectrics, which have both a high permittivity (ε) and high band gap energy (Eg), can reduce the leakage current density that adversely affects MOS devices. La2O3 and Sc2O 3 are rare earth oxides with a large Eg (6.18 eV and 6.3 eV respectively) and a relatively high ε (27 and 14.1 respectively), which make them good candidates for enhancing MOSFET performance. Epitaxial growth of oxides is a possible approach to reducing leakage current and Fermi level pinning related to a high density of interface states for dielectrics on compound semiconductors. In this work, La2O3 and Sc2O 3 were characterized structurally and electronically as potential epitaxial gate dielectrics for use in GaN based MOSFETs. GaN surface treatments were examined as a means for additional interface passivation and influencing subsequent oxide formation. Potassium persulfate (K2(SO4)2) and potassium hydroxide (KOH) were explored as a way to achieve improved passivation and desired surface termination for GaN films deposited on sapphire substrates by metal organic chemical vapor deposition (MOCVD). X-ray photoelectron spectroscopy (XPS) showed that KOH left a nitrogen-rich interface, while K2(SO 4)2 left a gallium-rich interface, which provides a way to control surface oxide formation. K2(SO4)2 exhibited a shift in the O1s peak indicating the formation of a gallium-rich GaOx at the surface with decreased carbon contaminants. GaO x acts as a passivating layer prior to dielectric deposition, which resulted in an order of magnitude reduction in leakage current, a reduced hysteresis window, and an overall improvement in device performance. Furthermore, K2(SO4)2 resulted in an additional 0.4 eV of

High-density plasma etching of III-nitrides: Process development, device applications and damage remediation

Science.gov (United States)

Singh, Rajwinder

Plasma-assisted etching is a key technology for III-nitride device fabrication. The inevitable etch damage resulting from energetic pattern transfer is a challenge that needs to be addressed in order to optimize device performance and reliability. This dissertation focuses on the development of a high-density inductively-coupled plasma (ICP) etch process for III-nitrides, the demonstration of its applicability to practical device fabrication using a custom built ICP reactor, and development of techniques for remediation of etch damage. A chlorine-based standard dry etch process has been developed and utilized in fabrication of a number of electronic and optoelectronic III-nitride devices. Annealing studies carried out at 700°C have yielded the important insight that the annealing time necessary for making good-quality metal contacts to etch processed n-GaN is very short (water, prior to metallization, removes some of the etch damage and is helpful in recovering contact quality. In-situ treatment consisting of a slow ramp-down of rf bias at the end of the etch is found to achieve the same effect as the ex-situ treatment. This insitu technique is significantly advantageous in a large-scale production environment because it eliminates a process step, particularly one involving treatment in hydrochloric acid. ICP equipment customization for scaling up the process to full 2-inch wafer size is described. Results on etching of state of the art 256 x 256 AlGaN focal plane arrays of ultraviolet photodetectors are reported, with excellent etch uniformity over the wafer area.

A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon–Gallium-Nitride Slot Waveguide Structures

Directory of Open Access Journals (Sweden)

Dror Malka

2016-06-01

Full Text Available In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI coupler in a silicon (Si–gallium nitride (GaN slot waveguide structure is presented—to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM. Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530–1565 nm into four output ports with low insertion losses (0.07 dB.

A Photonic 1 × 4 Power Splitter Based on Multimode Interference in Silicon–Gallium-Nitride Slot Waveguide Structures

Science.gov (United States)

Malka, Dror; Danan, Yossef; Ramon, Yehonatan; Zalevsky, Zeev

2016-01-01

In this paper, a design for a 1 × 4 optical power splitter based on the multimode interference (MMI) coupler in a silicon (Si)–gallium nitride (GaN) slot waveguide structure is presented—to our knowledge, for the first time. Si and GaN were found as suitable materials for the slot waveguide structure. Numerical optimizations were carried out on the device parameters using the full vectorial-beam propagation method (FV-BPM). Simulation results show that the proposed device can be useful to divide optical signal energy uniformly in the C-band range (1530–1565 nm) into four output ports with low insertion losses (0.07 dB). PMID:28773638

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

Science.gov (United States)

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

Structural materialization of stainless steel molds and dies by the low temperature high density plasma nitriding

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2015-01-01

Full Text Available Various kinds of stainless steels have been widely utilized as a mold substrate material for injection molding and as a die for mold-stamping and direct stamping processes. Since they suffered from high temperature transients and thermal cycles in practice, they must be surface-treated by dry and wet coatings, or, by plasma nitriding. Martensitic stainless steel mold was first wet plated by the nickel phosphate (NiP, which was unstable at the high temperature stamping condition; and, was easy to crystalize or to fracture by itself. This issue of nuisance significantly lowered the productivity in fabrication of optical elements at present. In the present paper, the stainless steel mold was surface-treated by the low-temperature plasma nitriding. The nitrided layer by this surface modification had higher nitrogen solute content than 4 mass%; the maximum solid-solubility of nitrogen is usually 0.1 mass% in the equilibrium phase diagram. Owing to this solid-solution with high nitrogen concentration, the nitrided layer had high hardness of 1400 Hv within its thickness of 40 μm without any formation of nitrides after 14.4 ks plasma nitriding at 693 K. This nitrogen solid-solution treated stainless steel had thermal resistivity even at the mold-stamping conditions up to 900 K.

Imaging the p-n junction in a gallium nitride nanowire with a scanning microwave microscope

Energy Technology Data Exchange (ETDEWEB)

Imtiaz, Atif [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Electrical, Computer, and Energy Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Wallis, Thomas M.; Brubaker, Matt D.; Blanchard, Paul T.; Bertness, Kris A.; Sanford, Norman A.; Kabos, Pavel, E-mail: kabos@boulder.nist.gov [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Weber, Joel C. [Physical Measurement Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States); Department of Mechanical Engineering, University of Colorado, Boulder, Colorado 80309 (United States); Coakley, Kevin J. [Information Technology Laboratory, National Institute of Standards and Technology, Boulder, Colorado 80305 (United States)

2014-06-30

We used a broadband, atomic-force-microscope-based, scanning microwave microscope (SMM) to probe the axial dependence of the charge depletion in a p-n junction within a gallium nitride nanowire (NW). SMM enables the visualization of the p-n junction location without the need to make patterned electrical contacts to the NW. Spatially resolved measurements of S{sub 11}{sup ′}, which is the derivative of the RF reflection coefficient S{sub 11} with respect to voltage, varied strongly when probing axially along the NW and across the p-n junction. The axial variation in S{sub 11}{sup ′}  effectively mapped the asymmetric depletion arising from the doping concentrations on either side of the junction. Furthermore, variation of the probe tip voltage altered the apparent extent of features associated with the p-n junction in S{sub 11}{sup ′} images.

Nitride surface passivation of GaAs nanowires: impact on surface state density.

Science.gov (United States)

Alekseev, Prokhor A; Dunaevskiy, Mikhail S; Ulin, Vladimir P; Lvova, Tatiana V; Filatov, Dmitriy O; Nezhdanov, Alexey V; Mashin, Aleksander I; Berkovits, Vladimir L

2015-01-14

Surface nitridation by hydrazine-sulfide solution, which is known to produce surface passivation of GaAs crystals, was applied to GaAs nanowires (NWs). We studied the effect of nitridation on conductivity and microphotoluminescence (μ-PL) of individual GaAs NWs using conductive atomic force microscopy (CAFM) and confocal luminescent microscopy (CLM), respectively. Nitridation is found to produce an essential increase in the NW conductivity and the μ-PL intensity as well evidence of surface passivation. Estimations show that the nitride passivation reduces the surface state density by a factor of 6, which is of the same order as that found for GaAs/AlGaAs nanowires. The effects of the nitride passivation are also stable under atmospheric ambient conditions for six months.

Effect of low NH3 flux towards high quality semi-polar (11-22) GaN on m-plane sapphire via MOCVD

Science.gov (United States)

Omar, Al-Zuhairi; Shuhaimi Bin Abu Bakar, Ahmad; Makinudin, Abdullah Haaziq Ahmad; Khudus, Muhammad Imran Mustafa Abdul; Azman, Adreen; Kamarundzaman, Anas; Supangat, Azzuliani

2018-05-01

The effect of ammonia flux towards the quality of the semi-polar (11-22) gallium nitride thin film on m-plane (10-10) sapphire is presented. Semi-polar (11-22) gallium nitride epi-layers were obtained using a two-step growth method, consisting of high temperature aluminum nitride followed by gallium nitride via metal organic chemical vapor deposition. The surface morphology analysis via field emission scanning electron microscopy and atomic force microscopy of the semi-polar (11-22) gallium nitride has shown that low ammonia flux promotes two-dimensional growth with low surface roughness of 4.08 nm. A dominant diffraction peak of (11-22) gallium nitride was also observed via X-ray diffraction upon utilizing low ammonia flux. The on- and off-axis X-ray rocking curve measurements illustrate the enhancement of the crystal quality, which might result from the reduction of the basal stacking faults and perfect dislocation. The full width half maximum values were reduced by at least 15% for both on- and off-axis measurements.

Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

Energy Technology Data Exchange (ETDEWEB)

Hsu, Y.J.; Hong, L.S.; Huang, K.F.; Tsay, J.E

2002-11-01

Gallium nitride (GaN) films have been homoepitaxially grown by low pressure metalorganic chemical vapor deposition technique using dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the reactants at low temperatures ranging from 873 to 923 K and a constant pressure of 10 Torr. The potential of utilizing DMHy as a nitrogen source is evaluated through understanding the kinetics of GaN film growth. A growth rate dependency study with respect to DMHy and TMG concentrations indicates that Langmuir-Hinshelwood typed reaction dominates the film growth. From a model fitting to the experimental film growth rate, the adsorption equilibrium constant of DMHy is found to be approximately 1/20 that of TMG, indicating that V/III feed ratio can be reduced down to 20 to obtain a stoichiometric GaN film. Based on X-ray photoelectron spectroscope measurement, the films formed by DMHy, however, accompany significant carbon contamination due to the strong C-N bonding in DMHy. The contamination can be relieved effectively by introducing H{sub 2} into the reaction.

Low temperature metalorganic chemical vapor deposition of gallium nitride using dimethylhydrazine as nitrogen source

International Nuclear Information System (INIS)

Hsu, Y.J.; Hong, L.S.; Huang, K.F.; Tsay, J.E.

2002-01-01

Gallium nitride (GaN) films have been homoepitaxially grown by low pressure metalorganic chemical vapor deposition technique using dimethylhydrazine (DMHy) and trimethylgallium (TMG) as the reactants at low temperatures ranging from 873 to 923 K and a constant pressure of 10 Torr. The potential of utilizing DMHy as a nitrogen source is evaluated through understanding the kinetics of GaN film growth. A growth rate dependency study with respect to DMHy and TMG concentrations indicates that Langmuir-Hinshelwood typed reaction dominates the film growth. From a model fitting to the experimental film growth rate, the adsorption equilibrium constant of DMHy is found to be approximately 1/20 that of TMG, indicating that V/III feed ratio can be reduced down to 20 to obtain a stoichiometric GaN film. Based on X-ray photoelectron spectroscope measurement, the films formed by DMHy, however, accompany significant carbon contamination due to the strong C-N bonding in DMHy. The contamination can be relieved effectively by introducing H 2 into the reaction

Nitride passivation of the interface between high-k dielectrics and SiGe

Energy Technology Data Exchange (ETDEWEB)

Sardashti, Kasra [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Materials Science and Engineering Program, University of California, San Diego, La Jolla, California 92093-0411 (United States); Hu, Kai-Ting [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States); Department of Mechanical and Aerospace Engineering, University of California, San Diego, La Jolla, California 92093-0411 (United States); Tang, Kechao; McIntyre, Paul [Department of Materials Science and Engineering, Stanford University, Stanford, California 94305 (United States); Madisetti, Shailesh; Oktyabrsky, Serge [Colleges of Nanoscale Science and Engineering, SUNY Polytechnic Institute, Albany, New York 12222 (United States); Siddiqui, Shariq; Sahu, Bhagawan [TD Research, GLOBALFOUNDRIES US, Inc., Albany, New York 12203 (United States); Yoshida, Naomi; Kachian, Jessica; Dong, Lin [Applied Materials, Inc., Santa Clara, California 95054 (United States); Fruhberger, Bernd [California Institute for Telecommunications and Information Technology, University of California San Diego, La Jolla, California 92093-0436 (United States); Kummel, Andrew C., E-mail: akummel@ucsd.edu [Department of Chemistry and Biochemistry, University of California, San Diego, La Jolla, California 92093-0358 (United States)

2016-01-04

In-situ direct ammonia (NH{sub 3}) plasma nitridation has been used to passivate the Al{sub 2}O{sub 3}/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al{sub 2}O{sub 3}/SiGe interface shows that NH{sub 3} plasma pre-treatment should be performed at high temperatures (300 °C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 °C.

Low-cost growth of magnesium doped gallium nitride thin films by sol-gel spin coating method

Science.gov (United States)

Amin, N. Mohd; Ng, S. S.

2018-01-01

Low-cost sol-gel spin coating growth of magnesium (Mg) doped gallium nitride (GaN) thin films with different concentrations of Mg was reported. The effects of the Mg concentration on the structural, surface morphology, elemental compositions, lattice vibrational, and electrical properties of the deposited films were investigated. X-ray diffraction results show that the Mg-doped samples have wurtzite structure with preferred orientation of GaN(002). The crystallite size decreases and the surface of the films with pits/pores were formed, while the crystalline quality of the films degraded as the Mg concentration increases from 2% to 6. %. All the Raman active phonon modes of the wurtzite GaN were observed while a broad peak attributed to the Mg-related lattice vibrational mode was detected at 669 cm-1. Hall effect results show that the resistivity of the thin films decreases while the hole concentration and hall mobility of thin films increases as the concentration of the Mg increases.

Density Functional Theory Study on Defect Feature of AsGaGaAs in Gallium Arsenide

Directory of Open Access Journals (Sweden)

Deming Ma

2015-01-01

Full Text Available We investigate the defect feature of AsGaGaAs defect in gallium arsenide clusters in detail by using first-principles calculations based on the density functional theory (DFT. Our calculations reveal that the lowest donor level of AsGaGaAs defect on the gallium arsenide crystal surface is 0.85 eV below the conduction band minimum, while the lowest donor level of the AsGaGaAs defect inside the gallium arsenide bulk is 0.83 eV below the bottom of the conduction band, consistent with gallium arsenide EL2 defect level of experimental value (Ec-0.82 eV. This suggests that AsGaGaAs defect is one of the possible gallium arsenide EL2 deep-level defects. Moreover, our results also indicate that the formation energies of internal AsGaGaAs and surface AsGaGaAs defects are predicted to be around 2.36 eV and 5.54 eV, respectively. This implies that formation of AsGaGaAs defect within the crystal is easier than that of surface. Our results offer assistance in discussing the structure of gallium arsenide deep-level defect and its effect on the material.

Direct growth of vanadium nitride nanosheets on carbon nanotube fibers as novel negative electrodes for high-energy-density wearable fiber-shaped asymmetric supercapacitors

Science.gov (United States)

Guo, Jiabin; Zhang, Qichong; Sun, Juan; Li, Chaowei; Zhao, Jingxin; Zhou, Zhenyu; He, Bing; Wang, Xiaona; Man, Ping; Li, Qiulong; Zhang, Jun; Xie, Liyan; Li, Mingxing; Yao, Yagang

2018-04-01

Significant efforts have been recently devoted to constructing high-performance fiber-shaped asymmetric supercapacitors. However, it is still a paramount challenge to develop high-energy-density fiber-shaped asymmetric supercapacitors for practical applications in portable and wearable electronics. This work reports a simple and efficient method to directly grow vanadium nitride nanosheets on carbon nanotube fibers as advanced negative electrodes with a high specific capacitance of 188 F/cm3 (564 mF/cm2). Taking advantage of their attractive structure, we successfully fabricated a fiber-shaped asymmetric supercapacitor device with a maximum operating voltage of 1.6 V by assembling the vanadium nitride/carbon nanotube fiber negative electrode with the Zinc-Nickel-Cobalt ternary oxides nanowire arrays positive electrode. Due to the excellent synergistic effects between positive and negative electrodes, a remarkable specific capacitance of 50 F/cm3 (150 mF/cm2) and an outstanding energy density of 17.78 mWh/cm3 (53.33 μWh/cm2) for our fiber-shaped asymmetric supercapacitor can be achieved. Furthermore, the as-assembled fiber-shaped asymmetric supercapacitor device has excellent mechanical flexibility in that 91% of the capacitance retained after bending 90° for 3000 times. Thus, this work exploits a pathway to construct high-energy-density fiber-shaped asymmetric supercapacitor for next-generation portable and wearable electronics.

Surface Preparation and Deposited Gate Oxides for Gallium Nitride Based Metal Oxide Semiconductor Devices

Directory of Open Access Journals (Sweden)

Paul C. McIntyre

2012-07-01

Full Text Available The literature on polar Gallium Nitride (GaN surfaces, surface treatments and gate dielectrics relevant to metal oxide semiconductor devices is reviewed. The significance of the GaN growth technique and growth parameters on the properties of GaN epilayers, the ability to modify GaN surface properties using in situ and ex situ processes and progress on the understanding and performance of GaN metal oxide semiconductor (MOS devices are presented and discussed. Although a reasonably consistent picture is emerging from focused studies on issues covered in each of these topics, future research can achieve a better understanding of the critical oxide-semiconductor interface by probing the connections between these topics. The challenges in analyzing defect concentrations and energies in GaN MOS gate stacks are discussed. Promising gate dielectric deposition techniques such as atomic layer deposition, which is already accepted by the semiconductor industry for silicon CMOS device fabrication, coupled with more advanced physical and electrical characterization methods will likely accelerate the pace of learning required to develop future GaN-based MOS technology.

Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces

Science.gov (United States)

Garg, Manjari; Naik, Tejas R.; Pathak, C. S.; Nagarajan, S.; Rao, V. Ramgopal; Singh, R.

2018-04-01

III-Nitride semiconductors face the issue of localized surface states, which causes fermi level pinning and large leakage current at the metal semiconductor interface, thereby degrading the device performance. In this work, we have demonstrated the use of a Self-Assembled Monolayer (SAM) of organic molecules to improve the electrical characteristics of Schottky barrier diodes (SBDs) on n-type Gallium Nitride (n-GaN) epitaxial films. The electrical characteristics of diodes were improved by adsorption of SAM of hydroxyl-phenyl metallated porphyrin organic molecules (Zn-TPPOH) onto the surface of n-GaN. SAM-semiconductor bonding via native oxide on the n-GaN surface was confirmed using X-ray photoelectron spectroscopy measurements. Surface morphology and surface electronic properties were characterized using atomic force microscopy and Kelvin probe force microscopy. Current-voltage characteristics of different metal (Cu, Ni) SBDs on bare n-GaN were compared with those of Cu/Zn-TPPOH/n-GaN and Ni/Zn-TPPOH/n-GaN SBDs. It was found that due to the molecular monolayer, the surface potential of n-GaN was decreased by ˜350 mV. This caused an increase in the Schottky barrier height of Cu and Ni SBDs from 1.13 eV to 1.38 eV and 1.07 eV to 1.22 eV, respectively. In addition to this, the reverse bias leakage current was reduced by 3-4 orders of magnitude for both Cu and Ni SBDs. Such a significant improvement in the electrical performance of the diodes can be very useful for better device functioning.

Low Temperature Reactions for the Preparation of Group 13-15 Materials from Organo-gallium(I) and -indium(I) Compounds

National Research Council Canada - National Science Library

Beachley, O

1997-01-01

...) at 175 deg C and of neopentylgallium(I) Ga(CH2CMe3)n with P4 at 350- 400 deg C and with NH3 at 460-480 deg C in sealed tubes provide routes to indium phosphide, gallium phosphide and hexagonal gallium nitride, respectively...

Surface and interface properties of polar gallium nitride layers; Oberflaechen- und Grenzflaecheneigenschaften von polaren Galliumnitrid-Schichten

Energy Technology Data Exchange (ETDEWEB)

Lorenz, Pierre

2010-07-09

The material properties of group III-nitrides allows manifold applications. Especially for the GaN-based gas and biosensor technology, an understanding of the GaN surfaces and their interaction with molecules is crucial for the successful development of sensor systems. Especially the influence of crystal orientation, surface termination and reconstruction on the interaction was analysed. To study the interaction of the GaN surface with molecules the reproducible and controllable preparation of GaN surfaces is necessary. Polar GaN layers were grown by molecular beam epitaxy. The surface reconstruction and termination could be selectively adjusted by the growth parameters or further preparation steps. On the Ga-polar surface, gallium-induced and nitrogen-induced 2 x 2 reconstructed as well as non-reconstructed surface modifications could be generated and on the N-polar surface non-reconstructed. The different surface modifications differ considerably in the formation of surface states. The Ga-induced and N-induced 2 x 2 reconstructed surfaces presented two surface states (SS) at 1.4 eV and 3 eV as well as 2 eV and 3 eV, respectively. The non-reconstructed GaN(0001) presented three SS (1.5 eV, 2.5 eV and 3.4 eV) and the GaN(000-1) one SS (2.5 eV). The theoretical predicted surfaces sates (density functional theory) shows a good agreement with the measurements. The analysis revealed a dependence of the interaction of GaN surfaces with O{sub 2} and H{sub 2}O on the orientation, reconstruction, and surface termination of the films. The GaN(000-1) surface is much more reactive to oxygen and water than the (0001) orientated surfaces, while GaN is in general significantly more sensitive to water than to oxygen. The chemical bond configuration of the adsorbed species shows a significant dependence on surface termination. The measurements presented that the formation of nitrogen oxide and/or gallium oxide bonds depends on the surface modification. Furthermore the interaction

Possibility of the use of intermediate carbidsiliconoxide nanolayers on polydiamond substrates for gallium nitride layers epitaxy

Energy Technology Data Exchange (ETDEWEB)

Averichkin, P. A., E-mail: P-Yugov@mail.ru; Donskov, A. A. [State Research and Design Institute of Rare-Metal Industry Giredmet AO (Russian Federation); Dukhnovsky, M. P. [R & D Enterprise Istok (Russian Federation); Knyazev, S. N. [State Research and Design Institute of Rare-Metal Industry Giredmet AO (Russian Federation); Kozlova, Yu. P. [Russian Academy of Sciences, Institute for Nuclear Research (Russian Federation); Yugova, T. G.; Belogorokhov, I. A. [State Research and Design Institute of Rare-Metal Industry Giredmet AO (Russian Federation)

2016-04-15

The results of using carbidsiliconoxide (a-C:SiO1{sub .5}) films with a thickness of 30–60 nm, produced by the pyrolysis annealing of oligomethylsilseskvioksana (CH{sub 3}–SiO{sub 1.5}){sub n} with cyclolinear (staircased) molecular structure, as intermediate films in the hydride vapor phase epitaxy of gallium nitride on polycrystalline CVD-diamond substrates are presented. In the pyrolysis annealing of (CH{sub 3}–SiO{sub 1.5}){sub n} films in an atmosphere of nitrogen at a temperature of 1060°C, methyl radicals are carbonized to yield carbon atoms chemically bound to silicon. In turn, these atoms form a SiC monolayer on the surface of a-C:SiO{sub 1.5} films via covalent bonding with silicon. It is shown that GaN islands grow on such an intermediate layer on CVD-polydiamond substrates in the process of hydride vapor phase epitaxy in a vertical reactor from the GaCl–NH{sub 3}–N{sub 2} gas mixture.

Experimental core electron density of cubic boron nitride

DEFF Research Database (Denmark)

Wahlberg, Nanna; Bindzus, Niels; Bjerg, Lasse

as well as experimental result. The redistribution of electron density will, if not accounted for, result in increased thermal parameters. It is estimated that 1.7-2 electrons is transferred from boron to nitrogen. [1]: N. Bindzus, T. Straasø, N. Wahlberg, J. Becker, L. Bjerg, N. Lock, A.-C. Dippel, and B......Experimental core electron density of cubic boron nitride Nanna Wahlberg*, Niels Bindzus*, Lasse Bjerg*, Jacob Becker*, and Bo B. Iversen* *Aarhus University, Department of Chemistry, CMC, Langelandsgade 140, 8000 Århus, Denmark The resent progress in powder diffraction provides data of quality...... obtained. The displacement parameters reported here are significantly lower than those previously reported, stressing the importance of an adequate description of the core density. The charge transfer from boron to nitrogen clearly affects the inner electron density, which is evident from theoretical...

GaN-based High Power High Frequency Wide Range LLC Resonant Converter, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — SET Group will design, build and demonstrate a Gallium Nitride (GaN) based High Power High Frequency Wide Range LLC Resonant Converter capable of handling high power...

Low Damage, High Anisotropy Inductively Coupled Plasma for Gallium Nitride based Devices

KAUST Repository

Ibrahim, Youssef H.

2013-05-27

Group III-nitride semiconductors possess unique properties, which make them versatile materials for suiting many applications. Structuring vertical and exceptionally smooth GaN profiles is crucial for efficient optical device operation. The processing requirements for laser devices and ridge waveguides are stringent as compared to LEDs and other electronic devices. Due to the strong bonding and chemically inert nature of GaN, dry etching becomes a critical fabrication step. The surface morphology and facet etch angle are analyzed using SEM and AFM measurements. The influence of different mask materials is also studied including Ni as well as a SiO2 and resist bilayer. The high selectivity Ni Mask is found to produce high sidewall angles ~79°. Processing parameters are optimized for both the mask material and GaN in order to achieve a highly anisotropic, smooth profile, without resorting to additional surface treatment steps. An optimizing a SF6/O2 plasma etch process resulted in smooth SiO2 mask sidewalls. The etch rate and GaN surface roughness dependence on the RF power was also examined. Under a low 2mTorr pressure, the RF and ICP power were optimized to 150W and 300W respectively, such that a smooth GaN morphology and sidewalls was achieved with reduced ion damage. The The AFM measurements of the etched GaN surface indicate a low RMS roughness ranging from 4.75 nm to 7.66 nm.

As-Grown Gallium Nitride Nanowire Electromechanical Resonators

Science.gov (United States)

Montague, Joshua R.

Technological development in recent years has led to a ubiquity of micro- and nano-scale electromechanical devices. Sensors for monitoring temperature, pressure, mass, etc., are now found in nearly all electronic devices at both the industrial and consumer levels. As has been true for integrated circuit electronics, these electromechanical devices have continued to be scaled down in size. For many nanometer-scale structures with large surface-to-volume ratio, dissipation (energy loss) becomes prohibitively large causing a decreasing sensitivity with decreasing sensor size. In this work, gallium nitride (GaN) nanowires are investigated as singly-clamped (cantilever) mechanical resonators with typical mechanical quality factors, Q (equal to the ratio of resonance frequency to peak full-width-at-half-maximum-power) and resonance frequencies, respectively, at or above 30,000, and near 1 MHz. These Q values---in vacuum at room temperature---indicate very low levels of dissipation; they are essentially the same as those for bulk quartz crystal resonators that form the basis of simple clocks and mass sensors. The GaN nanowires have lengths and diameters, respectively, of approximately 15 micrometers and hundreds of nanometers. As-grown GaN nanowire Q values are larger than other similarly-sized, bottom-up, cantilever resonators and this property makes them very attractive for use as resonant sensors. We demonstrate the capability of detecting sub-monolayer levels of atomic layer deposited (ALD) films, and the robust nature of the GaN nanowires structure that allows for their 'reuse' after removal of such layers. In addition to electron microscope-based measurement techniques, we demonstrate the successful capacitive detection of a single nanowire using microwave homodyne reflectometry. This technique is then extended to allow for simultaneous measurements of large ensembles of GaN nanowires on a single sample, providing statistical information about the distribution of

Study of the dosimetric response of Gallium Nitride (GaN): modeling, simulation and characterization on radiotherapy

International Nuclear Information System (INIS)

Wang, Ruoxi

2015-01-01

The work in this thesis has the objective to increase the measurement precision of the dosimetry based on the Gallium Nitride (GaN) transducer and develop its applications on radiotherapy. The study includes the aspects of modeling, simulation and characterization of this response in external radiotherapy and brachytherapy. In modeling, we have proposed two approaches to model the GaN transducer's response in external radiotherapy. For the first approach, a model has been built based on experimental data, while separating the primary and scattering component of the beam. For the second approach, we have adopted a response model initially developed for the silicon diodes for the GaN radioluminescent transducer. We have also proposed an original concept of bi-media dosimetry which evaluates the dose in tissue according to different responses from two media without prior information on the conditions of irradiation. This concept has been shown by Monte Carlo simulation. Moreover, for High Dose Rate brachytherapy, the response of GaN transducer irradiated by iridium 192 and cobalt 60 sources has been evaluated by Monte Carlo simulation and confirmed by the measurements. Studies on the property characterization of GaN radioluminescent transducer has been carried out with these sources as well. An instrumented phantom prototype with GaN probe has been developed for the HDR brachytherapy quality control. It allows a real-time verification of the physics parameters of a treatment (source dwell position, source dwell time, source activity). (author) [fr

Gallium interstitial contributions to diffusion in gallium arsenide

Science.gov (United States)

Schick, Joseph T.; Morgan, Caroline G.

2011-09-01

A new diffusion path is identified for gallium interstitials, which involves lower barriers than the barriers for previously identified diffusion paths [K. Levasseur-Smith and N. Mousseau, J. Appl. Phys. 103, 113502 (2008), P. A. Schultz and O. A. von Lilienfeld, Modelling and Simulation in Materials Science and Engineering 17, 084007 (2009)] for the charge states which dominate diffusion over most of the available range of Fermi energies. This path passes through the ⟨110⟩ gallium-gallium split interstitial configuration, and has a particularly low diffusion barrier of 0.35 eV for diffusion in the neutral charge state. As a part of this work, the character of the charge states for the gallium interstitials which are most important for diffusion is investigated, and it is shown that the last electron bound to the neutral interstitial occupies a shallow hydrogenic bound state composed of conduction band states for the hexagonal interstitial and both tetrahedral interstitials. How to properly account for the contributions of such interstitials is discussed for density-functional calculations with a k-point mesh not including the conduction band edge point. Diffusion barriers for gallium interstitials are calculated in all the charge states which can be important for a Fermi level anywhere in the gap, q = 0, +1, +2, and +3, for diffusion via the ⟨110⟩ gallium-gallium split interstitial configuration and via the hexagonal interstitial configuration. The lowest activation enthalpies over most of the available range of Fermi energies are found to correspond to diffusion in the neutral or singly positive state via the ⟨110⟩ gallium-gallium split interstitial configuration. It is shown that several different charge states and diffusion paths contribute significantly for Fermi levels within 0.2 eV above the valence band edge, which may help to explain some of the difficulties [H. Bracht and S. Brotzmann, Phys. Rev. B 71, 115216 (2005)] which have been

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

Science.gov (United States)

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

Radiochemical neutron activation analysis based multi-elemental analysis of high purity gallium

International Nuclear Information System (INIS)

Tashimova, F.A.; Sadikov, I.I; Salimov, M.I.; Zinov'ev, V.G.

2006-01-01

Full text: Gallium is one of the widely used materials in semiconductor and optoelectronics industry. Gallium is used to produce infrared detectors, piezoelectric sensors, high- and low-temperature transistors for space and defense technology. One of the most important requirements for semiconductor materials of gallium compounds is an excessive high purity for layers and films. Information on impurities (type of an impurity, concentration, character of distribution) is important as for better understanding of the physical and chemical processes taking place in formed semiconductor structures and for the 'know-how' of devices on their basis. The object of this work is to develop radiochemical neutron activation technique for analysis of high purity gallium. Irradiation of 0.1 g of gallium sample in neutron flux of 5·10 13 cm -2 s -1 for 5 hours will result in induced activity of more than 10 8 Bq, due to 72 Ga radionuclide, half-life of which is 14.1 hours. Therefore to perform instrumental NAA of gallium long period (10 day) cooling is required, and high sensitive determination of elements producing short- and long-lived radionuclides (T 1/2 72 Ga. We have studied the behavior of gallium in extraction-chromatographic system 'TBP-HCl'. The experiments have shown that higher factor of distribution (D) and capacity on gallium can be achieved when 'TBP-4M HCl' system is used. However more than 10 trace elements have high D and thus they cannot be separated from 72 Ga. To resolve the problem and increase the number of separated trace elements we have used preliminary satisfaction of chromatographic column with tellurium, which has D higher than the most of elements in 'TBP-4M HCl' system and thus suppresses extraction of elements. Distribution profile of gallium along the column and elution curve of 25 trace elements have been measured. Chemical yields of separated elements measured by using radiotracers are more than 93%. On the basis of the carried out researches

Growth of 1.5 micron gallium indium nitrogen arsenic antimonide vertical cavity surface emitting lasers by molecular beam epitaxy

Science.gov (United States)

Wistey, Mark Allan

Fiber optics has revolutionized long distance communication and long haul networks, allowing unimaginable data speeds and noise-free telephone calls around the world for mere pennies per hour at the trunk level. But the high speeds of optical fiber generally do not extend to individual workstations or to the home, in large part because it has been difficult and expensive to produce lasers which emitted light at wavelengths which could take advantage of optical fiber. One of the most promising solutions to this problem is the development of a new class of semiconductors known as dilute nitrides. Dilute nitrides such as GaInNAs can be grown directly on gallium arsenide, which allows well-established processing techniques. More important, gallium arsenide allows the growth of vertical-cavity surface-emitting lasers (VCSELs), which can be grown in dense, 2D arrays on each wafer, providing tremendous economies of scale for manufacturing, testing, and packaging. Unfortunately, GaInNAs lasers have suffered from what has been dubbed the "nitrogen penalty," with high thresholds and low efficiency as the fraction of nitrogen in the semiconductor was increased. This thesis describes the steps taken to identify and essentially eliminate the nitrogen penalty. Protecting the wafer surface from plasma ignition, using an arsenic cap, greatly improved material quality. Using a Langmuir probe, we further found that the nitrogen plasma source produced a large number of ions which damaged the wafer during growth. The ions were dramatically reduced using deflection plates. Low voltage deflection plates were found to be preferable to high voltages, and simulations showed low voltages to be adequate for ion removal. The long wavelengths from dilute nitrides can be partly explained by wafer damage during growth. As a result of these studies, we demonstrated the first CW, room temperature lasers at wavelengths beyond 1.5mum on gallium arsenide, and the first GaInNAs(Sb) VCSELs beyond 1

Effect of gas flow on the selective area growth of gallium nitride via metal organic vapor phase epitaxy

Science.gov (United States)

Rodak, L. E.; Kasarla, K. R.; Korakakis, D.

2007-08-01

The effect of gas flow on the selective area growth (SAG) of gallium nitride (GaN) grown via metal organic vapor phase epitaxy (MOVPE) has been investigated. In this study, the SAG of GaN was carried out on a silicon dioxide striped pattern along the GaN direction. SAG was initiated with the striped pattern oriented parallel and normal to the incoming gas flow in a horizontal reactor. The orientation of the pattern did not impact cross section of the structure after re-growth as both orientations resulted in similar trapezoidal structures bounded by the (0 0 0 1) and {1 1 2¯ n} facets ( n≈1.7-2.2). However, the growth rates were shown to depend on the orientation of the pattern as the normally oriented samples exhibited enhanced vertical and cross-sectional growth rates compared to the parallel oriented samples. All growths occurred under identical conditions and therefore the difference in growth rates must be attributed to a difference in mass transport of species.

Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides.

Science.gov (United States)

Zhang, Kehao; Jariwala, Bhakti; Li, Jun; Briggs, Natalie C; Wang, Baoming; Ruzmetov, Dmitry; Burke, Robert A; Lerach, Jordan O; Ivanov, Tony G; Haque, Md; Feenstra, Randall M; Robinson, Joshua A

2017-12-21

Two and three-dimensional (2D/3D) hybrid materials have the potential to advance communication and sensing technologies by enabling new or improved device functionality. To date, most 2D/3D hybrid devices utilize mechanical exfoliation or post-synthesis transfer, which can be fundamentally different from directly synthesized layers that are compatible with large scale industrial needs. Therefore, understanding the process/property relationship of synthetic heterostructures is priority for industrially relevant material architectures. Here we demonstrate the scalable synthesis of molybdenum disulfide (MoS 2 ) and tungsten diselenide (WSe 2 ) via metal organic chemical vapor deposition (MOCVD) on gallium nitride (GaN), and elucidate the structure, chemistry, and vertical transport properties of the 2D/3D hybrid. We find that the 2D layer thickness and transition metal dichalcogenide (TMD) choice plays an important role in the transport properties of the hybrid structure, where monolayer TMDs exhibit direct tunneling through the layer, while transport in few layer TMDs on GaN is dominated by p-n diode behavior and varies with the 2D/3D hybrid structure. Kelvin probe force microscopy (KPFM), low energy electron microscopy (LEEM) and X-ray photoelectron spectroscopy (XPS) reveal a strong intrinsic dipole and charge transfer between n-MoS 2 and p-GaN, leading to a degraded interface and high p-type leakage current. Finally, we demonstrate integration of heterogeneous 2D layer stacks of MoS 2 /WSe 2 on GaN with atomically sharp interface. Monolayer MoS 2 /WSe 2 /n-GaN stacks lead to near Ohmic transport due to the tunneling and non-degenerated doping, while few layer stacking is Schottky barrier dominated.

Study of current instabilities in high resistivity gallium arsenide

International Nuclear Information System (INIS)

Barraud, A.

1968-01-01

We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [fr

Temperature-dependent structure evolution in liquid gallium

International Nuclear Information System (INIS)

Xiong, L.H.; Wang, X.D.; Yu, Q.; Zhang, H.; Zhang, F.; Sun, Y.; Cao, Q.P.; Xie, H.L.; Xiao, T.Q.; Zhang, D.X.; Wang, C.Z.; Ho, K.M.

2017-01-01

Temperature-dependent atomistic structure evolution of liquid gallium (Ga) has been investigated by using in situ high energy X-ray diffraction experiment and ab initio molecular dynamics simulation. Both experimental and theoretical results reveal the existence of a liquid structural change around 1000 K in liquid Ga. Below and above this temperature the liquid exhibits differences in activation energy for self-diffusion, temperature-dependent heat capacity, coordination numbers, density, viscosity, electric resistivity and thermoelectric power, which are reflected from structural changes of the bond-orientational order parameter Q_6, fraction of covalent dimers, averaged string length and local atomic packing. This finding will trigger more studies on the liquid-to-liquid crossover in metallic melts. - Graphical abstract: Atomistic structure evolution of liquid gallium has been investigated by using in situ high energy X-ray diffraction and ab initio molecular dynamics simulations, which both demonstrate the existence of a liquid structural change together with reported density, viscosity, electric resistivity and absolute thermoelectric power data.

Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.

Science.gov (United States)

Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P; Pearton, Stephen J

2010-01-01

Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. HEMT structures, consisting of a 3-microm-thick undoped GaN buffer, 30-A-thick Al(0.3)Ga(0.7)N spacer, and 220-A-thick silicon-doped Al(0.3)Ga(0.7)N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc(2)O(3)), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. The Sc(2)O(3)-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of approximately 0.1 pH. A chloride ion detection limit of 10(-8) M was achieved with a HEMT sensor immobilized with the AgCl thin film. The drain-source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 microM. There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensing different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the

Temperature and carrier-density dependence of Auger and radiative recombination in nitride optoelectronic devices

International Nuclear Information System (INIS)

Kioupakis, Emmanouil; Yan, Qimin; Steiauf, Daniel; Van de Walle, Chris G

2013-01-01

Nitride light-emitting diodes are a promising solution for efficient solid-state lighting, but their performance at high power is affected by the efficiency-droop problem. Previous experimental and theoretical work has identified Auger recombination, a three-particle nonradiative carrier recombination mechanism, as the likely cause of the droop. In this work, we use first-principles calculations to elucidate the dependence of the radiative and Auger recombination rates on temperature, carrier density and quantum-well confinement. Our calculated data for the temperature dependence of the recombination coefficients are in good agreement with experiment and provide further validation on the role of Auger recombination in the efficiency reduction. Polarization fields and phase-space filling negatively impact device efficiency because they increase the operating carrier density at a given current density and increase the fraction of carriers lost to Auger recombination. (paper)

Elastic properties of crystalline and liquid gallium at high pressures

Science.gov (United States)

Lyapin, A. G.; Gromnitskaya, E. L.; Yagafarov, O. F.; Stal'Gorova, O. V.; Brazhkin, V. V.

2008-11-01

The elastic properties of gallium, such as the bulk modulus B, the shear modulus G, and the Poisson’s ratio σ, are investigated and the relative change in the volume is determined in the stability regions of the Ga I, Ga II, and liquid phases at pressures of up to 1.7 GPa. The observed lines of the Ga I-Ga II phase transition and the melting curves of the Ga I and Ga II phases are in good agreement with the known phase diagram of gallium; in this case, the coordinates of the Ga I-Ga II-melt triple point are determined to be 1.24 ± 0.40 GPa and 277 ± 2 K. It is shown that the Ga I-Ga II phase transition is accompanied by a considerable decrease in the moduli B (by 30%) and G (by 55%) and an increase in the density by 5.7%. The Poisson’s ratio exhibits a jump from typically covalent values of approximately 0.22-0.25 to values of approximately 0.32-0.33, which are characteristic of metals. The observed behavior of the elastic characteristics is described in the framework of the model of the phase transition from a “quasi-molecular” (partially covalent) metal state to a “normal” metal state. An increase in the Poisson’s ratio in the Ga I phase from 0.22 to 0.25 with an increase in the pressure can be interpreted as a decrease in the degree of covalence, i.e., the degree of spatial anisotropy of the electron density along the bonds, whereas the large value of the pressure derivative of the bulk modulus (equal to approximately 8) observed up to the transition to the Ga II phase or the melt is associated not only with the quasicovalent nature of the Ga I phase but also with the structural features. In view of the presence of seven neighbors for each gallium atom in the Ga I phase, the gallium lattice can be treated as a structure intermediate between typical open-packed and close-packed structures. Premelting effects, such as a flattening of the isothermal dependence of the shear modulus G( p) with increasing pressure and an increase in the slope of the

Elastic properties of crystalline and liquid gallium at high pressures

International Nuclear Information System (INIS)

Lyapin, A. G.; Gromnitskaya, E. L.; Yagafarov, O. F.; Stal'gorova, O. V.; Brazhkin, V. V.

2008-01-01

The elastic properties of gallium, such as the bulk modulus B, the shear modulus G, and the Poisson's ratio σ, are investigated and the relative change in the volume is determined in the stability regions of the Ga I, Ga II, and liquid phases at pressures of up to 1.7 GPa. The observed lines of the Ga I-Ga II phase transition and the melting curves of the Ga I and Ga II phases are in good agreement with the known phase diagram of gallium; in this case, the coordinates of the Ga I-Ga II-melt triple point are determined to be 1.24 ± 0.40 GPa and 277 ± 2 K. It is shown that the Ga I-Ga II phase transition is accompanied by a considerable decrease in the moduli B (by 30%) and G (by 55%) and an increase in the density by 5.7%. The Poisson's ratio exhibits a jump from typically covalent values of approximately 0.22-0.25 to values of approximately 0.32-0.33, which are characteristic of metals. The observed behavior of the elastic characteristics is described in the framework of the model of the phase transition from a 'quasi-molecular' (partially covalent) metal state to a 'normal' metal state. An increase in the Poisson's ratio in the Ga I phase from 0.22 to 0.25 with an increase in the pressure can be interpreted as a decrease in the degree of covalence, i.e., the degree of spatial anisotropy of the electron density along the bonds, whereas the large value of the pressure derivative of the bulk modulus (equal to approximately 8) observed up to the transition to the Ga II phase or the melt is associated not only with the quasicovalent nature of the Ga I phase but also with the structural features. In view of the presence of seven neighbors for each gallium atom in the Ga I phase, the gallium lattice can be treated as a structure intermediate between typical open-packed and close-packed structures. Premelting effects, such as a flattening of the isothermal dependence of the shear modulus G(p) with increasing pressure and an increase in the slope of the isobaric

Magnetic behavior study of samarium nitride using density functional theory

Science.gov (United States)

Som, Narayan N.; Mankad, Venu H.; Dabhi, Shweta D.; Patel, Anjali; Jha, Prafulla K.

2018-02-01

In this work, the state-of-art density functional theory is employed to study the structural, electronic and magnetic properties of samarium nitride (SmN). We have performed calculation for both ferromagnetic and antiferromagnetic states in rock-salt phase. The calculated results of optimized lattice parameter and magnetic moment agree well with the available experimental and theoretical values. From energy band diagram and electronic density of states, we observe a half-metallic behaviour in FM phase of rock salt SmN in while metallicity in AFM I and AFM III phases. We present and discuss our current understanding of the possible half-metallicity together with the magnetic ordering in SmN. The calculated phonon dispersion curves shows dynamical stability of the considered structures. The phonon density of states and Eliashberg functional have also been analysed to understand the superconductivity in SmN.

Method of production of hollow silicon nitride articles

International Nuclear Information System (INIS)

Parr, N.L.; Brown, R.L.

1971-01-01

The hollow articles prepared according to the invention have a high density, exhibit no internal stresses and correspond to high demands of tolerance and surface quality. One obtains these by flame spraying silicon powder on a pre-heated form designed with separating agent - e.g. NaCl. After removing the form, the silicon is nitridated to silicon nitride by heating in N 2 or in an atmosphere of ammonia. This process can be interrupted if the article is also to be mechanically processed, and then the nitridation can be completed. (Hoe/LH) [de

Preparation of uranium nitride

International Nuclear Information System (INIS)

Potter, R.A.; Tennery, V.J.

1976-01-01

A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

Advanced Epi Tools for Gallium Nitride Light Emitting Diode Devices

Energy Technology Data Exchange (ETDEWEB)

Patibandla, Nag; Agrawal, Vivek

2012-12-01

Over the course of this program, Applied Materials, Inc., with generous support from the United States Department of Energy, developed a world-class three chamber III-Nitride epi cluster tool for low-cost, high volume GaN growth for the solid state lighting industry. One of the major achievements of the program was to design, build, and demonstrate the world’s largest wafer capacity HVPE chamber suitable for repeatable high volume III-Nitride template and device manufacturing. Applied Materials’ experience in developing deposition chambers for the silicon chip industry over many decades resulted in many orders of magnitude reductions in the price of transistors. That experience and understanding was used in developing this GaN epi deposition tool. The multi-chamber approach, which continues to be unique in the ability of the each chamber to deposit a section of the full device structure, unlike other cluster tools, allows for extreme flexibility in the manufacturing process. This robust architecture is suitable for not just the LED industry, but GaN power devices as well, both horizontal and vertical designs. The new HVPE technology developed allows GaN to be grown at a rate unheard of with MOCVD, up to 20x the typical MOCVD rates of 3{micro}m per hour, with bulk crystal quality better than the highest-quality commercial GaN films grown by MOCVD at a much cheaper overall cost. This is a unique development as the HVPE process has been known for decades, but never successfully commercially developed for high volume manufacturing. This research shows the potential of the first commercial-grade HVPE chamber, an elusive goal for III-V researchers and those wanting to capitalize on the promise of HVPE. Additionally, in the course of this program, Applied Materials built two MOCVD chambers, in addition to the HVPE chamber, and a robot that moves wafers between them. The MOCVD chambers demonstrated industry-leading wavelength yield for GaN based LED wafers and industry

Micro and nano-structured green gallium indium nitride/gallium nitride light-emitting diodes

Science.gov (United States)

Stark, Christoph J. M.

Light-emitting diodes (LEDs) are commonly designed and studied based on bulk material properties. In this thesis different approaches based on patterns in the nano and micrometer length scale range are used to tackle low efficiency in the green spectral region, which is known as “green gap”. Since light generation and extraction are governed by microscopic processes, it is instructive to study LEDs with lateral mesa sizes scaled to the nanometer range. Besides the well-known case of the quantum size effect along the growth direction, a continuous lateral scaling could reveal the mechanisms behind the purported absence of a green gap in nanowire LEDs and the role of their extraction enhancement. Furthermore the possibility to modulate strain and piezoelectric polarization by post growth patterning is of practical interest, because the internal electric fields in conventional wurtzite GaN LEDs cause performance problems. A possible alternative is cubic phase GaN, which is free of built-in polarization fields. LEDs on cubic GaN could show the link between strong polarization fields and efficiency roll-off at high current densities, also known as droop. An additional problem for all nitride-based LEDs is efficient light extraction. For a planar GaN LED only roughly 8% of the generated light can be extracted. Novel lightextraction structures with extraction-favoring geometry can yield significant increase in light output power. To investigate the effect of scaling the mesa dimension, micro and nano-sized LED arrays of variable structure size were fabricated. The nano-LEDs were patterned by electron beam lithography and dry etching. They contained up to 100 parallel nano-stripe LEDs connected to one common contact area. The mesa width was varied over 1 μm, 200 nm, and 50 nm. These LEDs were characterized electrically and optically, and the peak emission wavelength was found to depend on the lateral structure size. An electroluminescence (EL) wavelength shift of 3 nm

The sensitivity of the electron transport within bulk zinc-blende gallium nitride to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley

Energy Technology Data Exchange (ETDEWEB)

Siddiqua, Poppy; O' Leary, Stephen K., E-mail: stephen.oleary@ubc.ca [School of Engineering, The University of British Columbia, 3333 University Way, Kelowna, British Columbia V1V 1V7 (Canada)

2016-09-07

Within the framework of a semi-classical three-valley Monte Carlo simulation approach, we analyze the steady-state and transient electron transport that occurs within bulk zinc-blende gallium nitride. In particular, we examine how the steady-state and transient electron transport that occurs within this material changes in response to variations in the crystal temperature, the doping concentration, and the non-parabolicity coefficient associated with the lowest energy conduction band valley. These results are then contrasted with those corresponding to a number of other compound semiconductors of interest.

Lifetime laser damage performance of β-Ga2O3 for high power applications

Directory of Open Access Journals (Sweden)

Jae-Hyuck Yoo

2018-03-01

Full Text Available Gallium oxide (Ga2O3 is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2. This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

Lifetime laser damage performance of β -Ga2O3 for high power applications

Science.gov (United States)

Yoo, Jae-Hyuck; Rafique, Subrina; Lange, Andrew; Zhao, Hongping; Elhadj, Selim

2018-03-01

Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor with potential applications in power electronics and high power optical systems where gallium nitride and silicon carbide have already demonstrated unique advantages compared to gallium arsenide and silicon-based devices. Establishing the stability and breakdown conditions of these next-generation materials is critical to assessing their potential performance in devices subjected to large electric fields. Here, using systematic laser damage performance tests, we establish that β-Ga2O3 has the highest lifetime optical damage performance of any conductive material measured to date, above 10 J/cm2 (1.4 GW/cm2). This has direct implications for its use as an active component in high power laser systems and may give insight into its utility for high-power switching applications. Both heteroepitaxial and bulk β-Ga2O3 samples were benchmarked against a heteroepitaxial gallium nitride sample, revealing an order of magnitude higher optical lifetime damage threshold for β-Ga2O3. Photoluminescence and Raman spectroscopy results suggest that the exceptional damage performance of β-Ga2O3 is due to lower absorptive defect concentrations and reduced epitaxial stress.

Gallium--A smart metal

Science.gov (United States)

Foley, Nora; Jaskula, Brian W.

2013-01-01

Gallium is a soft, silvery metallic element with an atomic number of 31 and the chemical symbol Ga. The French chemist Paul-Emile Lecoq de Boisbaudran discovered gallium in sphalerite (a zinc-sulfide mineral) in 1875 using spectroscopy. He named the element "gallia" after his native land of France (formerly Gaul; in Latin, Gallia). The existence of gallium had been predicted in 1871 by Dmitri Mendeleev, the Russian chemist who published the first periodic table of the elements. Mendeleev noted a gap in his table and named the missing element "eka-aluminum" because he determined that its location was one place away from aluminum in the table. Mendeleev thought that the missing element (gallium) would be very much like aluminum in its chemical properties, and he was right. Solid gallium has a low melting temperature (~29 degrees Celsius, or °C) and an unusually high boiling point (~2,204 °C). Because of these properties, the earliest uses of gallium were in high-temperature thermometers and in designing metal alloys that melt easily. The development of a gallium-based direct band-gap semiconductor in the 1960s led to what is now one of the most well-known applications for gallium-based products--the manufacture of smartphones and data-centric networks.

Thin-barrier enhancement-mode AlGaN/GaN MIS-HEMT using ALD Al2O3 as gate insulator

International Nuclear Information System (INIS)

Wang Zheli; Zhou Jianjun; Kong Yuechan; Kong Cen; Dong Xun; Yang Yang; Chen Tangsheng

2015-01-01

A high-performance enhancement-mode (E-mode) gallium nitride (GaN)-based metal–insulator–semiconductor high electron mobility transistor (MIS-HEMT) that employs a 5-nm-thick aluminum gallium nitride (Al 0.3 Ga 0.7 N) as a barrier layer and relies on silicon nitride (SiN) passivation to control the 2DEG density is presented. Unlike the SiN passivation, aluminum oxide (Al 2 O 3 ) by atomic layer deposition (ALD) on AlGaN surface would not increase the 2DEG density in the heterointerface. ALD Al 2 O 3 was used as gate insulator after the depletion by etching of the SiN in the gate region. The E-mode MIS-HEMT with gate length (L G ) of 1 μm showed a maximum drain current density (I DS ) of 657 mA/mm, a maximum extrinsic transconductance (g m ) of 187 mS/mm and a threshold voltage (V th ) of 1 V. Comparing with the corresponding E-mode HEMT, the device performances had been greatly improved due to the insertion of Al 2 O 3 gate insulator. This provided an excellent way to realize E-mode AlGaN/GaN MIS-HEMTs with both high V th and I DS . (paper)

Lithiation Kinetics in High-Performance Porous Vanadium Nitride Nanosheet Anode

International Nuclear Information System (INIS)

Peng, Xiang; Li, Wan; Wang, Lei; Hu, Liangsheng; Jin, Weihong; Gao, Ang; Zhang, Xuming; Huo, Kaifu; Chu, Paul K.

2016-01-01

Vanadium nitride (VN) is promising in lithium ion battery (LIB) anode due to its high energy density, chemical stability, and corrosion resistivity. Herein, porous VN nanosheets are synthesized hydrothermally followed by an ammonia treatment. The porous nanosheets offer a large interfacial area between the electrode and electrolyte as well as short Li + diffusion path and consequently, the VN nanosheets electrode has high capacity and rate capability as an anode in LIB. The VN anode delivers a high reversible capacity of 455 mAh g −1 at a current density of 100 mA g −1 and it remains at 341 mAh g −1 when the current density is increased to 1 A g −1 . The charge transfer and Li + diffusion kinetics during the lithiation process is studied systematically. A highly stable SEI film is formed during the initial discharging-charging cycles to achieve a long cycle life and sustained capacity at a high level for 250 discharging-charging cycles without deterioration. This work demonstrates the preparation of high-performance LIB anode materials by a simple method and elucidates the lithiation kinetics.

Electrophoretic Deposition of Gallium with High Deposition Rate

Directory of Open Access Journals (Sweden)

Hanfei Zhang

2014-12-01

Full Text Available In this work, electrophoretic deposition (EPD is reported to form gallium thin film with high deposition rate and low cost while avoiding the highly toxic chemicals typically used in electroplating. A maximum deposition rate of ~0.6 μm/min, almost one order of magnitude higher than the typical value reported for electroplating, is obtained when employing a set of proper deposition parameters. The thickness of the film is shown to increase with deposition time when sequential deposition is employed. The concentration of Mg(NO32, the charging salt, is also found to be a critical factor to control the deposition rate. Various gallium micropatterns are obtained by masking the substrate during the process, demonstrating process compatibility with microfabrication. The reported novel approach can potentially be employed in a broad range of applications with Ga as a raw material, including microelectronics, photovoltaic cells, and flexible liquid metal microelectrodes.

Nitriding of high speed steel

International Nuclear Information System (INIS)

Doyle, E.D.; Pagon, A.M.; Hubbard, P.; Dowey, S.J.; Pilkington, A.; McCulloch, D.G.; Latham, K.; DuPlessis, J.

2010-01-01

Current practice when nitriding HSS cutting tools is to avoid embrittlement of the cutting edge by limiting the depth of the diffusion zone. This is accomplished by reducing the nitriding time and temperature and eliminating any compound layer formation. However, in many applications there is an argument for generating a compound layer with beneficial tribological properties. In this investigation results are presented of a metallographic, XRD and XPS analysis of nitrided surface layers generated using active screen plasma nitriding and reactive vapour deposition using cathodic arc. These results are discussed in the context of built up edge formation observed while machining inside a scanning electron microscope. (author)

Mesoporous coaxial titanium nitride-vanadium nitride fibers of core-shell structures for high-performance supercapacitors.

Science.gov (United States)

Zhou, Xinhong; Shang, Chaoqun; Gu, Lin; Dong, Shanmu; Chen, Xiao; Han, Pengxian; Li, Lanfeng; Yao, Jianhua; Liu, Zhihong; Xu, Hongxia; Zhu, Yuwei; Cui, Guanglei

2011-08-01

In this study, titanium nitride-vanadium nitride fibers of core-shell structures were prepared by the coaxial electrospinning, and subsequently annealed in the ammonia for supercapacitor applications. These core-shell (TiN-VN) fibers incorporated mesoporous structure into high electronic conducting transition nitride hybrids, which combined higher specific capacitance of VN and better rate capability of TiN. These hybrids exhibited higher specific capacitance (2 mV s(-1), 247.5 F g(-1)) and better rate capability (50 mV s(-1), 160.8 F g(-1)), which promise a good candidate for high-performance supercapacitors. It was also revealed by electrochemical impedance spectroscopy (EIS) and X-ray photoelectron spectroscopy (XPS) characterization that the minor capacitance fade originated from the surface oxidation of VN and TiN.

Synthesis of Uranium nitride powders using metal uranium powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong Joo; Oh, Jang Soo; Rhee, Young Woo; Kim, Jong Hun; Kim, Keon Sik

2012-01-01

Uranium nitride (UN) is a potential fuel material for advanced nuclear reactors because of their high fuel density, high thermal conductivity, high melting temperature, and considerable breeding capability in LWRs. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. The carbothermic reduction has an advantage in the production of fine powders. However it has many drawbacks such as an inevitable engagement of impurities, process burden, and difficulties in reusing of expensive N 15 gas. Manufacturing concerns issued in the carbothermic reduction process can be solved by changing the starting materials from oxide powder to metals. However, in nitriding process of metal, it is difficult to obtain fine nitride powders because metal uranium is usually fabricated in the form of bulk ingots. In this study, a simple reaction method was tested to fabricate uranium nitride powders directly from uranium metal powders. We fabricated uranium metal spherical powder and flake using a centrifugal atomization method. The nitride powders were obtained by thermal treating those metal particles under nitrogen containing gas. We investigated the phase and morphology evolutions of powders during the nitriding process. A phase analysis of nitride powders was also a part of the present work

Ionic nitriding of high chromium martensitic stainless steels

International Nuclear Information System (INIS)

Bruhl, S.P; Charadia, R; Vaca, L.S; Cimetta, J

2008-01-01

Martensitic stainless steels are used in industrial applications where resistance to corrosion and mechanical resistance are needed simultaneously. These steels are normally used in tempering and annealing condition which gives them hardnesses of 500 and 600 HV (about 54 HRC). Ionic nitriding is an assisted diffusion technique that has recently been successfully applied to harden austenitic stainless steels without reducing their resistance to corrosion. The application with AISI 420 martensitic steels has not given good results yet, because in most cases, it affects their corrosion resistance. This work presents the results of the pulsed nitriding of martensitic steels with a higher chrome content, such as the M340 and M333 Boehler steels and they are compared with the same materials after tempering and annealing, without nitriding. The influence of the variations in the parameters of the process, such as the percentage of active time in the pulsed wave, partial nitrogen pressure, current density and effective tension in the microstructure, hardness and wear and corrosion resistance was studied. The microstructure was studied with an optic microscope; the wear resistance with abrasion tests following ASTM G-65 and corrosion with 100 hour long saline haze tests, in a device built according to ASTM B117. Hardness was found to rise to values of 1000 to 1350 HV in all the steels after ionic nitriding, the modified layers oscillated from 3 to 15 microns. As a result, wear resistance also increased, with differences depending on the microstructure and the thickness of the modified layer. However, corrosion resistance was not good, except in the case of the M333 steel test piece with less hardness and a less thick nitrided layer without a noticeable interphase (au)

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Surface Passivation of CIGS Solar Cells Using Gallium Oxide

KAUST Repository

Garud, Siddhartha

2018-02-27

This work proposes gallium oxide grown by plasma-enhanced atomic layer deposition, as a surface passivation material at the CdS buffer interface of Cu(In,Ga)Se2 (CIGS) solar cells. In preliminary experiments, a metal-insulator-semiconductor (MIS) structure is used to compare aluminium oxide, gallium oxide, and hafnium oxide as passivation layers at the CIGS-CdS interface. The findings suggest that gallium oxide on CIGS may show a density of positive charges and qualitatively, the least interface trap density. Subsequent solar cell results with an estimated 0.5 nm passivation layer show an substantial absolute improvement of 56 mV in open-circuit voltage (VOC), 1 mA cm−2 in short-circuit current density (JSC), and 2.6% in overall efficiency as compared to a reference (with the reference showing 8.5% under AM 1.5G).

Robust X-band LNAs in AlGaN/GaN technology

NARCIS (Netherlands)

Janssen, J.P.B.; Heijningen, M. van; Visser, G.C.; Rodenburg, M.; Johnson, H.K.; Uren, M.J.; Morvan, E.; Vliet, F.E. van

2009-01-01

Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have been

Robust X-band LNAs in AlGaN/GaN technology

NARCIS (Netherlands)

Janssen, J.P.B.; van Heiningen, M.; Visser, G.C.; Rodenburg, M.; Johnson, H.K.; Uren, M.J.; Morvan, E.; van Vliet, Frank Edward

2009-01-01

Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realise robust receiver components. This paper presents the design, realisation and measurement of two robust AlGaN/GaN low noise amplifiers. The two versions have

Turbostratic boron nitride coated on high-surface area metal oxide templates

DEFF Research Database (Denmark)

Klitgaard, Søren Kegnæs; Egeblad, Kresten; Brorson, M.

2007-01-01

Boron nitride coatings on high-surface area MgAl2O4 and Al2O3 have been synthesized and characterized by transmission electron microscopy and by X-ray powder diffraction. The metal oxide templates were coated with boron nitride using a simple nitridation in a flow of ammonia starting from ammonium...

Modification of Low-Alloy Steel Surface by High-Temperature Gas Nitriding Plus Tempering

Science.gov (United States)

Jiao, Dongling; Li, Minsong; Ding, Hongzhen; Qiu, Wanqi; Luo, Chengping

2018-02-01

The low-alloy steel was nitrided in a pure NH3 gas atmosphere at 640 660 °C for 2 h, i.e., high-temperature gas nitriding (HTGN), followed by tempering at 225 °C, which can produce a high property surface coating without brittle compound (white) layer. The steel was also plasma nitriding for comparison. The composition, microstructure and microhardness of the nitrided and tempered specimens were examined, and their tribological behavior investigated. The results showed that the as-gas-nitrided layer consisted of a white layer composed of FeN0.095 phase (nitrided austenite) and a diffusional zone underneath the white layer. After tempering, the white layer was decomposed to a nano-sized (α-Fe + γ'-Fe4N + retained austenite) bainitic microstructure with a high hardness of 1150HV/25 g. Wear test results showed that the wear resistance and wear coefficient yielded by the complex HTGN plus tempering were considerably higher and lower, respectively, than those produced by the conventional plasma nitriding.

Study of current instabilities in high resistivity gallium arsenide; Etude des instabilites de courant dans l'arseniure de gallium de haute resistivite

Energy Technology Data Exchange (ETDEWEB)

Barraud, A [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

1968-07-01

We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [French] Nous avons mis en evidence et etudie des oscillations de courant qui se produisent a champ electrique eleve dans l'arseniure de

High Quality, Low Cost Bulk Gallium Nitride Substrates Grown by the Electrochemical Solution Growth Method

Energy Technology Data Exchange (ETDEWEB)

Seacrist, Michael [SunEdison Inc., St. Peters, MO (United States)

2017-08-15

The objective of this project was to develop the Electrochemical Solution Growth (ESG) method conceived / patented at Sandia National Laboratory into a commercially viable bulk gallium nitride (GaN) growth process that can be scaled to low cost, high quality, and large area GaN wafer substrate manufacturing. The goal was to advance the ESG growth technology by demonstrating rotating seed growth at the lab scale and then transitioning process to prototype commercial system, while validating the GaN material and electronic / optical device quality. The desired outcome of the project is a prototype commercial process for US-based manufacturing of high quality, large area, and lower cost GaN substrates that can drive widespread deployment of energy efficient GaN-based power electronic and optical devices. In year 1 of the project (Sept 2012 – Dec 2013) the overall objective was to demonstrate crystalline GaN growth > 100um on a GaN seed crystal. The development plan included tasks to demonstrate and implement a method for purifying reagent grade salts, develop the reactor 1 process for rotating seed Electrochemical Solution Growth (ESG) of GaN, grow and characterize ESG GaN films, develop a fluid flow and reaction chemistry model for GaN film growth, and design / build an improved growth reactor capable of scaling to 50mm seed diameter. The first year’s project objectives were met in some task areas including salt purification, film characterization, modeling, and reactor 2 design / fabrication. However, the key project objective of the growth of a crystalline GaN film on the seed template was not achieved. Amorphous film growth on the order of a few tenths of a micron has been detected with a film composition including Ga and N, plus several other impurities originating from the process solution and hardware. The presence of these impurities, particularly the oxygen, has inhibited the demonstration of crystalline GaN film growth on the seed template. However, the

Damage structure of gallium arsenide irradiated in a high-voltage electron microscope

International Nuclear Information System (INIS)

Loretto, D.; Loretto, M.H.

1989-01-01

Semi-insulating undoped gallium arsenide has been irradiated in a high-voltage electron microscope between room temperature and about 500 0 C for doses of up to 5 x 10 22 electrons cm -2 at 1 MeV. Room-temperature irradiation produces small (less than 5 nm) damage clusters. As the temperature of the irradiation is increased, the size of these clusters increases, until at about 300 0 C a high density of dislocation loops can be resolved. The dislocation loops, 20 nm or less in diameter, which are produced at about 500 0 C have been analysed in a bright field using a two-beam inside-outside method which minimises the tilt necessary between micrographs. It is concluded that the loops are an interstitial perfect-edge type with a Burgers vector of (a/2) . (author)

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

International Nuclear Information System (INIS)

Szállás, A.; Szász, K.; Trinh, X. T.; Son, N. T.; Janzén, E.; Gali, A.

2014-01-01

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels, and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

Characterization of the nitrogen split interstitial defect in wurtzite aluminum nitride using density functional theory

Energy Technology Data Exchange (ETDEWEB)

Szállás, A., E-mail: szallas.attila@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Szász, K. [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Institute of Physics, Eötvös University, Pázmány Péter sétány 1/A, H-1117 Budapest (Hungary); Trinh, X. T.; Son, N. T.; Janzén, E. [Department of Physics, Chemistry and Biology, Linköping University, SE-581 83 Linköping (Sweden); Gali, A., E-mail: gali.adam@wigner.mta.hu [Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences, P.O. Box 49, H-1525 Budapest (Hungary); Department of Atomic Physics, Budapest University of Technology and Economics, Budafoki út 8, H-1111 Budapest (Hungary)

2014-09-21

We carried out Heyd-Scuseria-Ernzerhof hybrid density functional theory plane wave supercell calculations in wurtzite aluminum nitride in order to characterize the geometry, formation energies, transition levels, and hyperfine tensors of the nitrogen split interstitial defect. The calculated hyperfine tensors may provide useful fingerprint of this defect for electron paramagnetic resonance measurement.

X-band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

NARCIS (Netherlands)

Janssen, J.P.B.; Heijningen, M. van; Provenzano, G.; Visser, G.C.; Morvan, E.; Vliet, F.E. van

2008-01-01

Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two versions of

X-Band Robust AlGaN/GaN Receiver MMICs with over 41 dBm Power Handling

NARCIS (Netherlands)

Janssen, J.P.B.; van Heijningen, M; Provenzano, G.; van Vliet, Frank Edward

2008-01-01

Abstract Gallium-Nitride technology is known for its high power density and power amplifier designs, but is also very well suited to realize robust receiver components. This paper presents the design and measurement of a robust AlGaN/GaN Low Noise Amplifier and Transmit/Receive Switch MMIC. Two

Nitrogen Atom Transfer From High Valent Iron Nitrides

Energy Technology Data Exchange (ETDEWEB)

Johnson, Michael D. [New Mexico State Univ., Las Cruces, NM (United States); Smith, Jeremy M. [Indiana Univ., Bloomington, IN (United States)

2015-10-14

This report describes the synthesis and reactions of high valent iron nitrides. Organonitrogen compounds such as aziridines are useful species for organic synthesis, but there are few efficient methods for their synthesis. Using iron nitrides to catalytically access these species may allow for their synthesis in an energy-and atom-efficient manner. We have developed a new ligand framework to achieve these goals as well as providing a method for inducing previously unknown reactivity.

Density functional study of manganese atom adsorption on hydrogen-terminated armchair boron nitride nanoribbons

Energy Technology Data Exchange (ETDEWEB)

Abdullahi, Yusuf Zuntu [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Department of Physics, Faculty of Science, Kaduna State University, P.M.B. 2339, Kaduna State (Nigeria); Rahman, Md. Mahmudur, E-mail: mahmudur@upm.edu.my [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Shuaibu, Alhassan [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Department of Physics, Faculty of Science, Nigerian Defence Academy, P.M.B 2109 Kaduna (Nigeria); Abubakar, Shamsu [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Department of Physics, Faculty of Science, Yobe State University, P.M.B. 1144, Yobe State (Nigeria); Zainuddin, Hishamuddin [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Institute for Mathematical Research, Universiti Putra Malaysia, 43400 UPM Serdang, Selangor (Malaysia); Muhida, Rifki [Department of Physics-Energy Engineering, Surya University, Gedung 01 Scientia Business Park, Jl. Boulevard Gading Serpong Blok O/1, Summarecon Serpong, Tangerang 15810, Banten (Indonesia); Setiyanto, Henry [Analytical Chemistry Research Group, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Jl. Ganesha no. 10, Bandung 40132 (Indonesia)

2014-08-15

In this paper, we have investigated stable structural, electric and magnetic properties of manganese (Mn) atom adsorption on armchair hydrogen edge-terminated boron nitride nanoribbon (A-BNNRs) using first principles method based on density-functional theory with the generalized gradient approximation. Calculation shows that Mn atom situated on the ribbons of A-BNNRs is the most stable configuration, where the bonding is more pronounced. The projected density of states (PDOS) of the favored configuration has also been computed. It has been found that the covalent bonding of boron (B), nitrogen (N) and Mn is mainly contributed by s, d like-orbitals of Mn and partially occupied by the 2p like-orbital of N. The difference in energy between the inner and the edge adsorption sites of A-BNNRs shows that Mn atoms prefer to concentrate at the edge sites. The electronic structures of the various configurations are wide, narrow-gap semiconducting and half-metallic, and the magnetic moment of Mn atoms are well preserved in all considered configurations. This has shown that the boron nitride (BN) sheet covered with Mn atoms demonstrates additional information on its usefulness in future spintronics, molecular magnet and nanoelectronics devices.

Density functional study of manganese atom adsorption on hydrogen-terminated armchair boron nitride nanoribbons

International Nuclear Information System (INIS)

Abdullahi, Yusuf Zuntu; Rahman, Md. Mahmudur; Shuaibu, Alhassan; Abubakar, Shamsu; Zainuddin, Hishamuddin; Muhida, Rifki; Setiyanto, Henry

2014-01-01

In this paper, we have investigated stable structural, electric and magnetic properties of manganese (Mn) atom adsorption on armchair hydrogen edge-terminated boron nitride nanoribbon (A-BNNRs) using first principles method based on density-functional theory with the generalized gradient approximation. Calculation shows that Mn atom situated on the ribbons of A-BNNRs is the most stable configuration, where the bonding is more pronounced. The projected density of states (PDOS) of the favored configuration has also been computed. It has been found that the covalent bonding of boron (B), nitrogen (N) and Mn is mainly contributed by s, d like-orbitals of Mn and partially occupied by the 2p like-orbital of N. The difference in energy between the inner and the edge adsorption sites of A-BNNRs shows that Mn atoms prefer to concentrate at the edge sites. The electronic structures of the various configurations are wide, narrow-gap semiconducting and half-metallic, and the magnetic moment of Mn atoms are well preserved in all considered configurations. This has shown that the boron nitride (BN) sheet covered with Mn atoms demonstrates additional information on its usefulness in future spintronics, molecular magnet and nanoelectronics devices.

Test study of boron nitride as a new detector material for dosimetry in high-energy photon beams

Science.gov (United States)

Poppinga, D.; Halbur, J.; Lemmer, S.; Delfs, B.; Harder, D.; Looe, H. K.; Poppe, B.

2017-09-01

The aim of this test study is to check whether boron nitride (BN) might be applied as a detector material in high-energy photon-beam dosimetry. Boron nitride exists in various crystalline forms. Hexagonal boron nitride (h-BN) possesses high mobility of the electrons and holes as well as a high volume resistivity, so that ionizing radiation in the clinical range of the dose rate can be expected to produce a measurable electrical current at low background current. Due to the low atomic numbers of its constituents, its density (2.0 g cm-3) similar to silicon and its commercial availability, h-BN appears as possibly suitable for the dosimetry of ionizing radiation. Five h-BN plates were contacted to triaxial cables, and the detector current was measured in a solid-state ionization chamber circuit at an applied voltage of 50 V. Basic dosimetric properties such as formation by pre-irradiation, sensitivity, reproducibility, linearity and temporal resolution were measured with 6 MV photon irradiation. Depth dose curves at quadratic field sizes of 10 cm and 40 cm were measured and compared to ionization chamber measurements. After a pre-irradiation with 6 Gy, the devices show a stable current signal at a given dose rate. The current-voltage characteristic up to 400 V shows an increase in the collection efficiency with the voltage. The time-resolved detector current behavior during beam interrupts is comparable to diamond material, and the background current is negligible. The measured percentage depth dose curves at 10 cm  ×  10 cm field size agreed with the results of ionization chamber measurements within  ±2%. This is a first study of boron nitride as a detector material for high-energy photon radiation. By current measurements on solid ionization chambers made from boron nitride chips we could demonstrate that boron nitride is in principle suitable as a detector material for high-energy photon-beam dosimetry.

Properties of Er and Yb Doped Gallium nitride layers fabricated by magnetron sputtering

Czech Academy of Sciences Publication Activity Database

Prajzler, V.; Burian, Z.; Hüttel, I.; Špirková, J.; Hamáček, J.; Oswald, J.; Zavadil, Jiří; Peřina, Vratislav

2006-01-01

Roč. 46, č. 6 (2006), s. 49-55 ISSN 1210-2709 R&D Projects: GA ČR(CZ) GA102/06/0424 Institutional research plan: CEZ:AV0Z20670512; CEZ:AV0Z10480505 Keywords : fluorescence * gallium * rare earth compounds Subject RIV: BM - Solid Matter Physics ; Magnetism

Preparation of high-pressure phase boron nitride films by physical vapor deposition

CERN Document Server

Zhu, P W; Zhao, Y N; Li, D M; Liu, H W; Zou Guang Tian

2002-01-01

The high-pressure phases boron nitride films together with cubic, wurtzic, and explosive high-pressure phases, were successfully deposited on the metal alloy substrates by tuned substrate radio frequency magnetron sputtering. The percentage of cubic boron nitride phase in the film was about 50% as calculated by Fourier transform infrared measurements. Infrared peak position of cubic boron nitride at 1006.3 cm sup - sup 1 , which is close to the stressless state, indicates that the film has very low internal stress. Transition electron microscope micrograph shows that pure cubic boron nitride phase exits on the surface of the film. The growth mechanism of the BN films was also discussed.

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Thermal Conductivity of Wurtzite Zinc-Oxide from First-Principles Lattice Dynamics – a Comparative Study with Gallium Nitride

Science.gov (United States)

Wu, Xufei; Lee, Jonghoon; Varshney, Vikas; Wohlwend, Jennifer L.; Roy, Ajit K.; Luo, Tengfei

2016-01-01

Wurtzite Zinc-Oxide (w-ZnO) is a wide bandgap semiconductor that holds promise in power electronics applications, where heat dissipation is of critical importance. However, large discrepancies exist in the literature on the thermal conductivity of w-ZnO. In this paper, we determine the thermal conductivity of w-ZnO using first-principles lattice dynamics and compare it to that of wurtzite Gallium-Nitride (w-GaN) – another important wide bandgap semiconductor with the same crystal structure and similar atomic masses as w-ZnO. However, the thermal conductivity values show large differences (400 W/mK of w-GaN vs. 50 W/mK of w-ZnO at room temperature). It is found that the much lower thermal conductivity of ZnO originates from the smaller phonon group velocities, larger three-phonon scattering phase space and larger anharmonicity. Compared to w-GaN, w-ZnO has a smaller frequency gap in phonon dispersion, which is responsible for the stronger anharmonic phonon scattering, and the weaker interatomic bonds in w-ZnO leads to smaller phonon group velocities. The thermal conductivity of w-ZnO also shows strong size effect with nano-sized grains or structures. The results from this work help identify the cause of large discrepancies in w-ZnO thermal conductivity and will provide in-depth understanding of phonon dynamics for the design of w-ZnO-based electronics. PMID:26928396

Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

Energy Technology Data Exchange (ETDEWEB)

Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.; Robinson, Zachary R.; Nath, Anindya; Kozen, Alexander C.; Qadri, Syed B.; DeMasi, Alexander; Hite, Jennifer K.; Ludwig, Karl F.; Eddy, Charles R.

2017-05-01

Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

Structure of boron nitride after the high-temperature shock compression

International Nuclear Information System (INIS)

Kurdyumov, A.V.; Ostrovskaya, N.F.; Pilipenko, V.A.; Pilyankevich, A.N.; Savvakin, G.I.; Trefilov, V.I.

1979-01-01

Boron nitride structure changes as a result of high temperature dynamic compression are studied. The X-ray technique and transmission electron microscopy have been applied. The data on the structure and regularities of formation of diamond-like modifications of boron nitride at high temperature impact compression permit to consider martensite transformation as the first stage of formation of the sphalerite phase stable at high pressures. The second stage is possible if the temperature at the impact moment is sufficiently high for intensive diffusion processes

Microstructure and Hardness of High Temperature Gas Nitrided AISI 420 Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Ibrahim Nor Nurulhuda Md.

2014-07-01

Full Text Available This study examined the microstructure and hardness of as-received and nitrided AISI 420 martensitic stainless steels. High temperature gas nitriding was employed to treat the steels at 1200°C for one hour and four hours using nitrogen gas, followed by furnace cooled. Chromium nitride and iron nitride were formed and concentrated at the outmost surface area of the steels since this region contained the highest concentration of nitrogen. The grain size enlarged at the interior region of the nitrided steels due to nitriding at temperature above the recrystallization temperature of the steel and followed by slow cooling. The nitrided steels produced higher surface hardness compared to as-received steel due to the presence of nitrogen and the precipitation of nitrides. Harder steel was produced when nitriding at four hours compared to one hour since more nitrogen permeated into the steel.

III-nitrides on oxygen- and zinc-face ZnO substrates

International Nuclear Information System (INIS)

Namkoong, Gon; Burnham, Shawn; Lee, Kyoung-Keun; Trybus, Elaissa; Doolittle, W. Alan; Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni; Nemeth, Bill; Nause, Jeff

2005-01-01

The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and O-face ZnO. The polarity indicates that Zn-face ZnO leads to a single polarity, while O-face ZnO forms mixed polarity of III-nitrides. Furthermore, by using a vicinal ZnO substrate, the terrace-step growth of GaN was realized with a reduction by two orders of magnitude in the dislocation-related etch pit density to ∼10 8 cm -2 , while a dislocation density of ∼10 10 cm -2 was obtained on the on-axis ZnO substrates

Preparation of uranium-plutonium mixed nitride pellets with high purity

International Nuclear Information System (INIS)

Arai, Yasuo; Shiozawa, Ken-ichi; Ohmichi, Toshihiko

1992-01-01

Uranium-plutonium mixed nitride pellets have been prepared in the gloveboxes with high purity Ar gas atmosphere. Carbothermic reduction of the oxides in N 2 -H 2 mixed gas stream was adopted for synthesizing mixed nitride. Sintering was carried out in various conditions and the effect on the pellet characteristics was investigated. (author)

Design and Characterization of p-i-n Devices for Betavoltaic Microbatteries on Gallium Nitride

Science.gov (United States)

Khan, Muhammad Raziuddin A.

Betavoltaic microbatteries convert nuclear energy released as beta particles directly into electrical energy. These batteries are well suited for electrical applications such as micro-electro-mechanical systems (MEMS), implantable medical devices and sensors. Such devices are often located in hard to access places where long life, micro-size and lightweight are required. The working principle of a betavoltaic device is similar to a photovoltaic device; they differ only in that the electron hole pairs (EHPs) are generated in the device by electrons instead of photons. In this study, the performance of a betavoltaic device fabricated from gallium nitride (GaN) is investigated for beta particle energies equivalent to Tritium (3H) and Nickel-63 (N63) beta sources. GaN is an attractive choice for fabricating betavoltaic devices due to its wide band gap and radiation resistance. Another advantage GaN has is that it can be alloyed with aluminum (Al) to further increase the bandgap, resulting in a higher output power and increased efficiency. Betavoltaic devices were fabricated on p-i-n GaN structures grown by metalorganic chemical vapor deposition (MOCVD). The devices were characterized using current - voltage (IV) measurements without illumination (light or beta), using a laser driven light source, and under an electron beam. Dark IV measurements showed a turn on-voltage of ~ 3.4 V, specific-on-resistance of 15.1 m O-cm2, and a leakage current of 0.5 mA at -- 10 V. A clear photo-response was observed when IV curves were measured for these devices under a light source at a wavelength of 310 nm (4.0 eV). These devices were tested under an electron beam in order to evaluate their behavior as betavoltaic microbatteries without using radioactive materials. Output power of 70 nW and 640 nW with overall efficiencies of 1.2% and 4.0% were determined at the average energy emission of 3H (5.6 keV) and 63N (17 keV) respectively.

Dose dependent disposition of gallium-67 in rats

International Nuclear Information System (INIS)

Gautam, S.R.

1982-01-01

Radioactive gallium-67 has been employed as a diagnostic and follow-up agent for cancer therapy. Currently gallium nitrate is undergoing Phase I clinical studies. A million fold increase in the concentration of the carrier gallium citrate over the range of carrier-free gallium-67 (pgm) to 1.0 μg caused no significant alteration in the disposition of gallium-67 in rats.Gallium-67 was eliminated from blood with a biological t1/2 of 4.1 days. A linear tissue binding profile was observed for gallium-67 over this concentration range. A multi-compartment pharmacokinetic model was developed in which all the tissues studied were treated as separate compartments. At 1.0 mg dose level, significant alteration in the disposition of gallium-67 was observed in rats, > 95% of the initial radioactivity was characteristic reappearance of the radioactivity in the blood approximately 4 hours after dosing leading to a ''hump'' in the blood concentration-time profiles. Following the 1.0 mg dose low tissue levels were observed, except for the kidneys, which contained about 8% of the administered dose per gram of the tissue one-half hour after dosing. A non-linear tissue binding profile was observed to be associated with gallium at high doses. It was hypothesized that the rapid loss of gallium-67 from the vascular system following the high doses of gallium citrate was due to the accumulation of the drug in the kidneys where it was eventually eliminated via urine. The kidneys thus would act as a temporary storage site for gallium. It was concluded that the dose-related renal toxicity associated with gallium therapy may be attributed to the kidney's role as a temporary storage site following high doses

Investigating change of properties in gallium ion irradiation patterned single-layer graphene

Energy Technology Data Exchange (ETDEWEB)

Wang, Quan, E-mail: wangq@mail.ujs.edu.cn [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (China); Dong, Jinyao; Bai, Bing [School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013 (China); Xie, Guoxin [State Key Laboratory of Tribology, Tsinghua University, Beijing 100084 (China)

2016-10-14

Besides its excellent physical properties, graphene promises to play a significant role in electronics with superior properties, which requires patterning of graphene for device integration. Here, we presented the changes in properties of single-layer graphene before and after patterning using gallium ion beam. Combined with Raman spectra of graphene, the scanning capacitance microscopy (SCM) image confirmed that a metal–insulator transition occurred after large doses of gallium ion irradiation. The changes in work function and Raman spectra of graphene indicated that the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. The patterning width of graphene presented an increasing trend due to the scattering influence of the impurities and the substrate. - Highlights: • The scanning capacitance microscopy image confirmed a metal–insulator transition occurred after large doses of gallium ion irradiation. • The changes indicated the defect density increased as increasing the dose and a structural transition occurred during gallium ion irradiation. • The patterning width of graphene presented a increasing trend due to the scattering influence of the impurities and the substrate.

Process for producing silicon nitride based articles of high fracture toughness and strength

Science.gov (United States)

Huckabee, M.; Buljan, S.T.; Neil, J.T.

1991-09-10

A process for producing a silicon nitride-based article of improved fracture toughness and strength is disclosed. The process involves densifying to at least 98% of theoretical density a mixture including (a) a bimodal silicon nitride powder blend consisting essentially of about 10-30% by weight of a first silicon nitride powder of an average particle size of about 0.2 [mu]m and a surface area of about 8-12 m[sup 2]/g, and about 70-90% by weight of a second silicon nitride powder of an average particle size of about 0.4-0.6 [mu]m and a surface area of about 2-4 m[sup 2]/g, (b) about 10-50 percent by volume, based on the volume of the densified article, of refractory whiskers or fibers having an aspect ratio of about 3-150 and having an equivalent diameter selected to produce in the densified article an equivalent diameter ratio of the whiskers or fibers to grains of silicon nitride of greater than 1.0, and (c) an effective amount of a suitable oxide densification aid. Optionally, the mixture may be blended with a binder and injection molded to form a green body, which then may be densified by, for example, hot isostatic pressing.

Microstructural characterization of pulsed plasma nitrided 316L stainless steel

International Nuclear Information System (INIS)

Asgari, M.; Barnoush, A.; Johnsen, R.; Hoel, R.

2011-01-01

Highlights: → The low temperature pulsed plasma nitrided layer of 316 SS was studied. → The plastic deformation induced in the austenite due to nitriding is characterized by EBSD at different depths (i.e., nitrogen concentration). → Nanomechanical properties of the nitride layer was investigated by nanoindentation at different depths (i.e., nitrogen concentration). → High hardness, high nitrogen concentration and high dislocation density is detected in the nitride layer. → The hardness and nitrogen concentration decreased sharply beyond the nitride layer. - Abstract: Pulsed plasma nitriding (PPN) treatment is one of the new processes to improve the surface hardness and tribology behavior of austenitic stainless steels. Through low temperature treatment (<440 deg. C), it is possible to obtain unique combinations of wear and corrosion properties. Such a combination is achieved through the formation of a so-called 'extended austenite phase'. These surface layers are often also referred to as S-phase, m-phase or γ-phase. In this work, nitrided layers on austenitic stainless steels AISI 316L (SS316L) were examined by means of a nanoindentation method at different loads. Additionally, the mechanical properties of the S-phase at different depths were studied. Electron back-scatter diffraction (EBSD) examination of the layer showed a high amount of plasticity induced in the layer during its formation. XRD results confirmed the formation of the S-phase, and no deleterious CrN phase was detected.

State of rare earth impurities in gallium and indium antimonides

International Nuclear Information System (INIS)

Evgen'ev, S.B.; Kuz'micheva, G.M.

1990-01-01

State of rare earth impurities in indium and gallium antimonides was studied. Results of measuring density and lattice parameter of samples in GaSb-rare earth and InSb-rare earth systems are presented. It is shown that during rare earth dissolution in indium and gallium antimonides rare earth atoms occupy interstitial positions or, at least, are displaced from lattice points

Ni nanoparticles@Ni-Mo nitride nanorod arrays: a novel 3D-network hierarchical structure for high areal capacitance hybrid supercapacitors.

Science.gov (United States)

Ruan, Yunjun; Lv, Lin; Li, Zhishan; Wang, Chundong; Jiang, Jianjun

2017-11-23

Because of the advanced nature of their high power density, fast charge/discharge time, excellent cycling stability, and safety, supercapacitors have attracted intensive attention for large-scale applications. Nevertheless, one of the obstacles for their further development is their low energy density caused by sluggish redox reaction kinetics, low electroactive electrode materials, and/or high internal resistance. Here, we develop a facile and simple nitridation process to successfully synthesize hierarchical Ni nanoparticle decorated Ni 0.2 Mo 0.8 N nanorod arrays on a nickel foam (Ni-Mo-N NRA/NF) from its NiMoO 4 precursor, which delivers a high areal capacity of 2446 mC cm -2 at a current density of 2 mA cm -2 and shows outstanding cycling stability. The superior performance of the Ni-Mo-N NRA/NF can be ascribed to the metallic conductive nature of the Ni-Mo nitride, the fast surface redox reactions for the electrolyte ions and electrode materials, and the low contacted resistance between the active materials and the current collectors. Furthermore, a hybrid supercapacitor (HSC) is assembled using the Ni-Mo-N NRA/NF as the positive electrode and reduced graphene oxide (RGO) as the negative electrode. The optimized HSC exhibits excellent electrochemical performance with a high energy density of 40.9 W h kg -1 at a power density of 773 W kg -1 and a retention of 80.1% specific capacitance after 6000 cycles. These results indicate that the Ni-Mo-N NRA/NF have a promising potential for use in high-performance supercapacitors.

High-Efficiency Nitride-Based Solid-State Lighting

Energy Technology Data Exchange (ETDEWEB)

Paul T. Fini; Shuji Nakamura

2005-07-30

In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 {micro}m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of {approx} 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light

Optical characterisation of III-V nitride-based multiphase and diluted magnetic semiconductors

International Nuclear Information System (INIS)

Wegscheider, M.

2009-01-01

The present work is devoted to the investigation of the optical properties of transition metal doped Gallium nitride. The Gallium nitride layers are epitaxially grown in a full metalorganic chemical vapour deposition process whereas the transition metals iron or manganese as well as the n and p-type dopants silicon and magnesium are incorporated simultaneously. Background and driving force of the realization of such material systems is basically the evocation of ferromagnetic spin alignment where free carriers ensure the correspondence between the localized spin state provided by the metal ions. The production of completely new devices for semiconductor industries based on the possibility to switch on or off the ferrimagnetic alignment by changing the free carrier concentration can be expected in the near future. In this context photoluminescence studies in the ultraviolet and mid infrared spectral range at temperatures between the liquid helium point and room temperature at atmospheric pressure were made. These measurements basically provide information on optical transitions between the conduction and valence band and deep defects as well as on crystal field forced transitions within the d-orbitals of the metal ion involved. In this context valuable knowledge could have been gained on doping concentrations, growth fashions and parameters, formation of secondary phases as well as on the doping efficiency and incorporation sites of the metal atoms. (author) [de

Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

Science.gov (United States)

Yu, Haijiang

This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation

Hydride vapor phase epitaxy growth of GaN, InGaN, ScN, and ScAIN

NARCIS (Netherlands)

Bohnen, T.

2010-01-01

Chemical vapor deposition (CVD); hydride vapor phase epitaxy (HVPE); gallium nitride (GaN); indium gallium nitride (InGaN); scandium nitride (ScN); scandium aluminum nitride (ScAlN); semiconductors; thin films; nanowires; III nitrides; crystal growth - We studied the HVPE growth of different III

Reduction of Defects on Microstructure Aluminium Nitride Using High Temperature Annealing Heat Treatment

Science.gov (United States)

Tanasta, Z.; Muhamad, P.; Kuwano, N.; Norfazrina, H. M. Y.; Unuh, M. H.

2018-03-01

Aluminium Nitride (AlN) is a ceramic 111-nitride material that is used widely as components in functional devices. Besides good thermal conductivity, it also has a high band gap in emitting light which is 6 eV. AlN thin film is grown on the sapphire substrate (0001). However, lattice mismatch between both materials has caused defects to exist along the microstructure of AlN thin films. The defects have affected the properties of Aluminium Nitride. Annealing heat treatment has been proved by the previous researcher to be the best method to improve the microstructure of Aluminium Nitride thin films. Hence, this method is applied at four different temperatures for two hour. The changes of Aluminium Nitride microstructures before and after annealing is observed using Transmission Electron Microscope. It is observed that inversion domains start to occur at temperature of 1500 °C. Convergent Beam Electron Diffraction pattern simulation has confirmed the defects as inversion domain. Therefore, this paper is about to extract the matters occurred during the process of producing high quality Aluminium Nitride thin films and the ways to overcome this problem.

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2005-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2004-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

National Research Council Canada - National Science Library

Holmes, Kenneth

2002-01-01

.... This thesis studies the effects of AIGaN/GaN HEMTs' polarization, piezoelectric (PZ) and spontaneous, properties utilizing the TM commercially available Silvaco Atlas software for modeling and simulation...

Highly-Bioreactive Silica-Based Mesoporous Bioactive Glasses Enriched with Gallium(III

Directory of Open Access Journals (Sweden)

Sandra Sanchez-Salcedo

2018-03-01

Full Text Available Beneficial effects in bone cell growth and antibacterial action are currently attributed to Ga3+ ions. Thus, they can be used to upgrade mesoporous bioactive glasses (MBGs, investigated for tissue engineering, whenever they released therapeutic amounts of gallium ions to the surrounding medium. Three gallium-enriched MBGs with composition (in mol % xSiO2–yCaO–zP2O5–5Ga2O3, being x = 70, y = 15, z = 10 for Ga_1; x = 80, y = 12, z = 3 for Ga_2; and x = 80, y = 15, z = 0 for Ga_3, were investigated and compared with the gallium-free 80SiO2–15CaO–5P2O5 MBG (B. 29Si and 31P MAS NMR analyses indicated that Ga3+ acts as network modifier in the glass regions with higher polymerization degree and as network former in the zones with high concentration of classical modifiers (Ca2+ ions. Ga_1 and Ga_2 exhibited a quick in vitro bioactive response because they were coated by an apatite-like layer after 1 and 3 days in simulated body fluid. Although we have not conducted biological tests in this paper (cells or bacteria, Ga_1 released high but non-cytotoxic amounts of Ga3+ ions in Todd Hewitt Broth culture medium that were 140 times higher than the IC90 of Pseudomonas aeruginosa bacteria, demonstrating its potential for tissue engineering applications.

Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

International Nuclear Information System (INIS)

Anselin, F.

1966-06-01

A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

Science.gov (United States)

Fenwick, William Edward

GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen

Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

Science.gov (United States)

Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

1983-01-01

A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

Separation of zirconium--hafnium by nitride precipitation

International Nuclear Information System (INIS)

Anderson, R.N.; Parlee, N.A.

1977-01-01

A method is described for the separation of a light reactive metal (e.g., zirconium) from a heavy reactive metal (e.g., hafnium) by forming insoluble nitrides of the metals in a molten metal solvent (e.g., copper) inert to nitrogen and having a suitable density for the light metal nitride to form a separate phase in the upper portion of the solvent and for the heavy metal nitride to form a separate phase in the lower portion of the solvent. Nitriding is performed by maintaining a nitrogen-containing atmosphere over the bath. The light and heavy metals may be an oxide mixture and carbothermically reduced to metal form in the same bath used for nitriding. The nitrides are then separately removed and decomposed to form the desired separate metals. 16 claims, 1 figure

Module Integrated GaN Power Stage for High Switching Frequency Operation

DEFF Research Database (Denmark)

Nour, Yasser; Knott, Arnold

2017-01-01

is integrated on a high glass transition temperature 0.4 mmthick FR4 substrate configured as a 70 pin ball grid arraypackage. The power stage is tested up to switching frequency of12 MHz. The power stage achieved 88.5 % peak efficiency whenconfigured as a soft switching buck converter operating at 7MHz......An increased attention has been detected todevelop smaller and lighter high voltage power converters in therange of 50 V to 400 V domains. The applications for theseconverters are mainly focused for Power over Ethernet (PoE),LED lighting and ac adapters. Design for high power density isone...... of the targets for next generation power converters. Thispaper presents an 80 V input capable multi-chip moduleintegration of enhancement mode gallium nitride (GaN) fieldeffect transistors (FETs) based power stage. The module design ispresented and validated through experimental results. The powerstage...

Prism coupling technique for characterization of the high refractive index planar waveguides

Czech Academy of Sciences Publication Activity Database

Prajzler, V.; Nekvindová, P.; Varga, Marián; Bruncko, J.; Remeš, Zdeněk; Kromka, Alexander

2016-01-01

Roč. 18, 11-12 (2016), s. 915-921 ISSN 1454-4164 R&D Projects: GA ČR(CZ) GA14-05053S Institutional support: RVO:68378271 Keywords : high index contrast * optical planar waveguides * zinc oxide * nanocrystalline diamond * gallium nitride Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 0.449, year: 2016

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

topics including growth and heteroepitaxy, bulk GaN substrates, theory and modelling, optical properties, laser diodes and LEDs as well as transport properties and electronics. Farrell et al review materials and growth issues for high-performance non- and semipolar light-emitting devices, and Scholz provides an overview of heteroepitaxial growth of semipolar GaN. Okada et al review growth mechanisms of non- and semipolar GaN layers on patterned sapphire substrates, and Vennéguès discusses defect reduction methods for heteroepitaxially grown non- and semipolar III-nitride films. Leung et al explain how kinetic Wulff plots can be used to design and control non-polar and semipolar GaN heteroepitaxy, and a contribution by Sawaki et al explores the impurity incorporation in (1-101) GaN grown on Si substrates. In the area of bulk crystal growth Kucharski et al review non- and semipolar GaN substrates by ammonothermal growth, and Chichibu et al discuss the challenges for epitaxial growth of InGaN on free-standing m-plane GaN substrates. Calculation of semipolar orientations for wurtzitic semiconductor heterostructures and their application to nitrides and oxides are reviewed by Bigenwald et al, and Ito et al present an ab initio approach to reconstruction, adsorption, and incorporation on GaN surfaces. Finally, the theoretical description of non-polar and semipolar nitride semiconductor quantum-well structures is presented by Ahn et al. In a discussion of the optical properties, Kisin et al discuss the effect of the quantum well population on the optical characteristics of polar, semipolar and non-polar III-nitride light emitters, and Jönen et al investigate the indium incorporation and optical properties of non- and semipolar GaInN QW structures. Wernicke et al explore the emission wavelength of polar, non-polar, and semipolar InGaN quantum wells and the incorporation of indium. In a contribution by Melo et al, the gain in polar and non-polar/semipolar gallium-nitride

Highly catalytic and stabilized titanium nitride nanowire array-decorated graphite felt electrodes for all vanadium redox flow batteries

Science.gov (United States)

Wei, L.; Zhao, T. S.; Zeng, L.; Zeng, Y. K.; Jiang, H. R.

2017-02-01

In this work, we prepare a highly catalytic and stabilized titanium nitride (TiN) nanowire array-decorated graphite felt electrode for all vanadium redox flow batteries (VRFBs). Free-standing TiN nanowires are synthesized by a two-step process, in which TiO2 nanowires are first grown onto the surface of graphite felt via a seed-assisted hydrothermal method and then converted to TiN through nitridation reaction. When applied to VRFBs, the prepared electrode enables the electrolyte utilization and energy efficiency to be 73.9% and 77.4% at a high current density of 300 mA cm-2, which are correspondingly 43.3% and 15.4% higher than that of battery assembled with a pristine electrode. More impressively, the present battery exhibits good stability and high capacity retention during the cycle test. The superior performance is ascribed to the significant improvement in the electrochemical kinetics and enlarged active sites toward V3+/V2+ redox reaction.

Gallium Electromagnetic (GEM) Thrustor Concept and Design

Science.gov (United States)

Polzin, Kurt A.; Markusic, Thomas E.

2006-01-01

We describe the design of a new type of two-stage pulsed electromagnetic accelerator, the gallium electromagnetic (GEM) thruster. A schematic illustration of the GEM thruster concept is given in Fig. 1. In this concept, liquid gallium propellant is pumped into the first stage through a porous metal electrode using an electromagneticpump[l]. At a designated time, a pulsed discharge (approx.10-50 J) is initiated in the first stage, ablating the liquid gallium from the porous electrode surface and ejecting a dense thermal gallium plasma into the second state. The presence of the gallium plasma in the second stage serves to trigger the high-energy (approx.500 I), send-stage puke which provides the primary electromagnetic (j x B) acceleration.

Sodium enhances indium-gallium interdiffusion in copper indium gallium diselenide photovoltaic absorbers.

Science.gov (United States)

Colombara, Diego; Werner, Florian; Schwarz, Torsten; Cañero Infante, Ingrid; Fleming, Yves; Valle, Nathalie; Spindler, Conrad; Vacchieri, Erica; Rey, Germain; Guennou, Mael; Bouttemy, Muriel; Manjón, Alba Garzón; Peral Alonso, Inmaculada; Melchiorre, Michele; El Adib, Brahime; Gault, Baptiste; Raabe, Dierk; Dale, Phillip J; Siebentritt, Susanne

2018-02-26

Copper indium gallium diselenide-based technology provides the most efficient solar energy conversion among all thin-film photovoltaic devices. This is possible due to engineered gallium depth gradients and alkali extrinsic doping. Sodium is well known to impede interdiffusion of indium and gallium in polycrystalline Cu(In,Ga)Se 2 films, thus influencing the gallium depth distribution. Here, however, sodium is shown to have the opposite effect in monocrystalline gallium-free CuInSe 2 grown on GaAs substrates. Gallium in-diffusion from the substrates is enhanced when sodium is incorporated into the film, leading to Cu(In,Ga)Se 2 and Cu(In,Ga) 3 Se 5 phase formation. These results show that sodium does not decrease per se indium and gallium interdiffusion. Instead, it is suggested that sodium promotes indium and gallium intragrain diffusion, while it hinders intergrain diffusion by segregating at grain boundaries. The deeper understanding of dopant-mediated atomic diffusion mechanisms should lead to more effective chemical and electrical passivation strategies, and more efficient solar cells.

The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

Energy Technology Data Exchange (ETDEWEB)

Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

2014-11-15

Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

Nitride stabilized core/shell nanoparticles

Science.gov (United States)

Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

2018-01-30

Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

High-Density Plasma-Induced Etch Damage of GaN

International Nuclear Information System (INIS)

Baca, A.G.; Han, J.; Lester, L.F.; Pearton, S.J.; Ren, F.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

1999-01-01

Anisotropic, smooth etching of the group-III nitrides has been reported at relatively high rates in high-density plasma etch systems. However, such etch results are often obtained under high de-bias and/or high plasma flux conditions where plasma induced damage can be significant. Despite the fact that the group-III nitrides have higher bonding energies than more conventional III-V compounds, plasma-induced etch damage is still a concern. Attempts to minimize such damage by reducing the ion energy or increasing the chemical activity in the plasma often result in a loss of etch rate or anisotropy which significantly limits critical dimensions and reduces the utility of the process for device applications requiring vertical etch profiles. It is therefore necessary to develop plasma etch processes which couple anisotropy for critical dimension and sidewall profile control and high etch rates with low-damage for optimum device performance. In this study we report changes in sheet resistance and contact resistance for n- and p-type GaN samples exposed to an Ar inductively coupled plasma (ICP). In general, plasma-induced damage was more sensitive to ion bombardment energies as compared to plasma flux. In addition, p-GaN was typically more sensitive to plasma-induced damage as compared to n-GaN

Theoretical exploration of structural, electro-optical and magnetic properties of gallium-doped silicon carbide nanotubes

Science.gov (United States)

Behzad, Somayeh; Chegel, Raad; Moradian, Rostam; Shahrokhi, Masoud

2014-09-01

The effects of gallium doping on the structural, electro-optical and magnetic properties of (8,0) silicon carbide nanotube (SiCNT) are investigated by using spin-polarized density functional theory. It is found from the calculation of the formation energies that gallium substitution for silicon atom is preferred. Our results show that gallium substitution at either single carbon or silicon atom site in SiCNT could induce spontaneous magnetization. The optical studies based on dielectric function indicate that new transition peaks and a blue shift are observed after gallium doping.

Ternary nitrides for hydrogen storage: Li-B-N, Li-Al-N and Li-Ga-N systems

International Nuclear Information System (INIS)

Langmi, Henrietta W.; McGrady, G. Sean

2008-01-01

This paper reports an investigation of hydrogen storage performance of ternary nitrides based on lithium and the Group 13 elements boron, aluminum and gallium. These were prepared by ball milling Li 3 N together with the appropriate Group 13 nitride-BN, AlN or GaN. Powder X-ray diffraction of the products revealed that the ternary nitrides obtained are not the known Li 3 BN 2 , Li 3 AlN 2 and Li 3 GaN 2 phases. At 260 deg. C and 30 bar hydrogen pressure, the Li-Al-N ternary system initially absorbed 3.7 wt.% hydrogen, although this is not fully reversible. We observed, for the first time, hydrogen uptake by a pristine ternary nitride of Li and Al synthesized from the binary nitrides of the metals. While the Li-Ga-N ternary system also stored a significant amount of hydrogen, the storage capacity for the Li-B-N system was near zero. The hydrogenation reaction is believed to be similar to that of Li 3 N, and the enthalpies of hydrogen absorption for Li-Al-N and Li-Ga-N provide evidence that AlN and GaN, as well as the ball milling process, play a significant role in altering the thermodynamics of Li 3 N

Matrix density effects on the mechanical properties of SiC fiber-reinforced silicon nitride matrix properties

Science.gov (United States)

Bhatt, Ramakrishna T.; Kiser, Lames D.

1990-01-01

The room temperature mechanical properties were measured for SiC fiber reinforced reaction-bonded silicon nitride composites (SiC/RBSN) of different densities. The composites consisted of approx. 30 vol percent uniaxially aligned 142 micron diameter SiC fibers (Textron SCS-6) in a reaction-bonded Si3N4 matrix. The composite density was varied by changing the consolidation pressure during RBSN processing and by hot isostatically pressing the SiC/RBSN composites. Results indicate that as the consolidation pressure was increased from 27 to 138 MPa, the average pore size of the nitrided composites decreased from 0.04 to 0.02 microns and the composite density increased from 2.07 to 2.45 gm/cc. Nonetheless, these improvements resulted in only small increases in the first matrix cracking stress, primary elastic modulus, and ultimate tensile strength values of the composites. In contrast, HIP consolidation of SiC/RBSN resulted in a fully dense material whose first matrix cracking stress and elastic modulus were approx. 15 and 50 percent higher, respectively, and ultimate tensile strength values were approx. 40 percent lower than those for unHIPed SiC/RBSN composites. The modulus behavior for all specimens can be explained by simple rule-of-mixture theory. Also, the loss in ultimate strength for the HIPed composites appears to be related to a degradation in fiber strength at the HIP temperature. However, the density effect on matrix fracture strength was much less than would be expected based on typical monolithic Si3N4 behavior, suggesting that composite theory is indeed operating. Possible practical implications of these observations are discussed.

Precipitation of Chromium Nitrides in the Super Duplex Stainless Steel 2507

Science.gov (United States)

Pettersson, Niklas; Pettersson, Rachel F. A.; Wessman, Sten

2015-03-01

Precipitation of chromium nitrides during cooling from temperatures in the range 1373 K to 1523 K (1100 °C to 1250 °C) has been studied for the super duplex stainless steel 2507 (UNS S32750). Characterization with optical, scanning and transmission electron microscopy was combined to quantify the precipitation process. Primarily Cr2N nitrides were found to precipitate with a high density in the interior of ferrite grains. An increased cooling rate and/or an increased austenite spacing clearly promoted nitride formation, resulting in precipitation within a higher fraction of the ferrite grains, and lager nitride particles. Furthermore, formation of the meta-stable CrN was induced by higher cooling rates. The toughness seemed unaffected by nitrides. A slight decrease in pitting resistance was, however, noticed for quenched samples with large amounts of precipitates. The limited adverse effect on pitting resistance is attributed to the small size (~200 nm) of most nitrides. Slower cooling of duplex stainless steels to allow nitrogen partitioning is suggested in order to avoid large nitrides, and thereby produce a size distribution with a smaller detrimental effect on pitting resistance.

XPS analysis for cubic boron nitride crystal synthesized under high pressure and high temperature using Li3N as catalysis

International Nuclear Information System (INIS)

Guo, Xiaofei; Xu, Bin; Zhang, Wen; Cai, Zhichao; Wen, Zhenxing

2014-01-01

Highlights: • The cBN was synthesized by Li 3 N as catalyst under high pressure and high temperature (HPHT). • The film coated on the as-grown cBN crystals was studied by XPS. • The electronic structure variation in the film was investigated. • The growth mechanism of cubic boron nitride crystal was analyzed briefly. - Abstract: Cubic boron nitride (cBN) single crystals are synthesized with lithium nitride (Li3N) as catalyst under high pressure and high temperature. The variation of electronic structures from boron nitride of different layers in coating film on the cBN single crystal has been investigated by X-ray photoelectron spectroscopy. Combining the atomic concentration analysis, it was shown that from the film/cBN crystal interface to the inner, the sp 2 fractions are decreasing, and the sp 3 fractions are increasing in the film at the same time. Moreover, by transmission electron microscopy, a lot of cBN microparticles are found in the interface. For there is no Li 3 N in the film, it is possible that Li 3 N first reacts with hexagonal boron nitride to produce Li 3 BN 2 during cBN crystals synthesis under high pressure and high temperature (HPHT). Boron and nitrogen atoms, required for cBN crystals growth, could come from the direct conversion from hexagonal boron nitride with the catalysis of Li 3 BN 2 under high pressure and high temperature, but not directly from the decomposition of Li 3 BN 2

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

Energy Technology Data Exchange (ETDEWEB)

Wang Guigen, E-mail: wanggghit@yahoo.com [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Kuang Xuping; Zhang Huayu; Zhu Can [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Han Jiecai [Shenzhen Graduate School, Harbin Institute of Technology, Shenzhen 518055 (China); Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Zuo Hongbo [Center for Composite Materials, Harbin Institute of Technology, Harbin 150080 (China); Ma Hongtao [SAE Technologies Development (Dongguan) Co., Ltd., Dongguan 523087 (China)

2011-12-15

Highlights: Black-Right-Pointing-Pointer The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. Black-Right-Pointing-Pointer It highlighted the influences of Si-N underlayers. Black-Right-Pointing-Pointer The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of -150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of -150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Silicon nitride gradient film as the underlayer of ultra-thin tetrahedral amorphous carbon overcoat for magnetic recording slider

International Nuclear Information System (INIS)

Wang Guigen; Kuang Xuping; Zhang Huayu; Zhu Can; Han Jiecai; Zuo Hongbo; Ma Hongtao

2011-01-01

Highlights: ► The ultra-thin carbon films with different silicon nitride (Si-N) film underlayers were prepared. ► It highlighted the influences of Si-N underlayers. ► The carbon films with Si-N underlayers obtained by nitriding especially at the substrate bias of −150 V, can exhibit better corrosion protection properties - Abstract: There are higher technical requirements for protection overcoat of magnetic recording slider used in high-density storage fields for the future. In this study, silicon nitride (Si-N) composition-gradient films were firstly prepared by nitriding of silicon thin films pre-sputtered on silicon wafers and magnetic recording sliders, using microwave electron cyclotron resonance plasma source. The ultra-thin tetrahedral amorphous carbon films were then deposited on the Si-N films by filtered cathodic vacuum arc method. Compared with amorphous carbon overcoats with conventional silicon underlayers, the overcoats with Si-N underlayers obtained by plasma nitriding especially at the substrate bias of −150 V, can provide better corrosion protection for high-density magnetic recording sliders.

Investigations in gallium removal

Energy Technology Data Exchange (ETDEWEB)

Philip, C.V.; Pitt, W.W. [Texas A and M Univ., College Station, TX (United States); Beard, C.A. [Amarillo National Resource Center for Plutonium, TX (United States)

1997-11-01

Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated.

Investigations in gallium removal

International Nuclear Information System (INIS)

Philip, C.V.; Pitt, W.W.; Beard, C.A.

1997-11-01

Gallium present in weapons plutonium must be removed before it can be used for the production of mixed-oxide (MOX) nuclear reactor fuel. The main goal of the preliminary studies conducted at Texas A and M University was to assist in the development of a thermal process to remove gallium from a gallium oxide/plutonium oxide matrix. This effort is being conducted in close consultation with the Los Alamos National Laboratory (LANL) personnel involved in the development of this process for the US Department of Energy (DOE). Simple experiments were performed on gallium oxide, and cerium-oxide/gallium-oxide mixtures, heated to temperatures ranging from 700--900 C in a reducing environment, and a method for collecting the gallium vapors under these conditions was demonstrated

Gallium-67 activity in bronchoalveolar lavage fluid in sarcoidosis

International Nuclear Information System (INIS)

Trauth, H.A.; Heimes, K.; Schubotz, R.; von Wichert, P.

1986-01-01

Roentgenograms and gallium-67 scans and gallium-67 counts of BAL fluid samples, together with differential cell counts, have proved to be useful in assessing activity and lung involvement in sarcoidosis. In active pulmonary sarcoidosis gallium-67 scans are usually positive. Quantitation of gallium-67 uptake in lung scans, however, may be difficult. Because gallium-67 uptake and cell counts in BAL fluid may be correlated, we set out to investigate gallium-67 activity in BAL fluid recovered from patient of different groups. Sixteen patients with recently diagnosed and untreated sarcoidosis, nine patients with healthy lungs, and five patients with CFA were studied. Gallium-67 uptake of the lung, gallium-67 activity in the lavage fluid, SACE and LACE levels, and alpha 1-AT activity were measured. Significantly more gallium-67 activity was found in BAL fluid from sarcoidosis patients than in that from CFA patients (alpha = .001) or patients with healthy lungs (alpha = .001). Gallium-67 activity in BAL fluid could be well correlated with the number of lymphocytes in BAL fluid, but poorly with the number of macrophages. Subjects with increased levels of SACE or serum alpha 1-AT showed higher lavage gallium-67 activity than did normals, but no correlation could be established. High gallium-67 activity in lavage fluid may be correlated with acute sarcoidosis or physiological deterioration; low activity denotes change for the better. The results show that gallium-67 counts in BAL fluid reflects the intensity of gallium-67 uptake and thus of activity of pulmonary sarcoidosis

Epitaxial Stress-Free Growth of High Crystallinity Ferroelectric PbZr0.52Ti0.48O3 on GaN/AlGaN/Si(111) Substrate

NARCIS (Netherlands)

Li, Lin; Liao, Zhaoliang; Gauquelin, Nicolas; Nguyen, Minh Duc; Hueting, Raymond J.E.; Gravesteijn, Dirk J.; Lobato, Ivan; Houwman, Evert P.; Lazar, Sorin; Verbeeck, Johan; Koster, Gertjan; Rijnders, Guus

2018-01-01

Due to its physical properties gallium-nitride (GaN) is gaining a lot of attention as an emerging semiconductor material in the field of high-power and high-frequency electronics applications. Therefore, the improvement in the performance and/or perhaps even extension in functionality of GaN based

EDXRF and TXRF determination of gallium in gallium-uranium matrix

International Nuclear Information System (INIS)

Misra, N.L.; Sanjay Kumar, S.; Dhara, Sangita; Aggarwal, S.K.; Venugopal, V.

2009-01-01

Energy Dispersive X-Ray Fluorescence (EDXRF) and Total Reflection X-ray Fluorescence (TXRF) methods for determination of Gallium in Gallium-Uranium matrix have been developed. For EDXRF determinations, 200 μL of standards/samples mixed with internal standard copper were dispersed on 30 mm diameter absorbent sheet so that it behaves like a thin film of the sample. The Gallium amounts in samples were determined from their EDXRF spectra using a calibration plot. For TXRF determinations, samples were taken on flat polished quartz sample supports and Gallium was determined in conventional way. For EDXRF and TXRF determinations, the average precision and accuracy obtained for Ga determinations was better than 3% (1σ). (author)

Hilar accumulation of gallium-67 in patients with normal chest radiographs

International Nuclear Information System (INIS)

Hoshi, Hiroaki; Yamada, Hiroki; Kawahira, Kozaburo; Watanabe, Katsushi

1982-01-01

Gallium-67 scintigraphy is a useful screening test to detect malignant or inflammatory lesions. However, the accumulations of Gallium-67 in the normal pulmonary hilum are found in some cases. So, 277 cases with Gallium-67 scintigraphy were discussed. The hilar accumulation of Gallium-67 was classified into four grades, namely Grade 0: no Gallium-67 uptake, Grade I: low Gallium-67 uptake, Grade II: moderate Gallium-67 uptake, and Grade III: high Gallium-67 uptake. Gallium-67 uptake was found in 38 of 277 cases (14%). Thirty cases of these were estimated as Grade I (79%). Cases with Grade II were 20.3%, and only two cases were Grade III (0.7%). Gallium-67 accumulation, was bilateral in 28 cases out of 38 and cases with Gallium-67 accumulation increased with age. Twenty five of the 38 cases with Gallium-67 accumulation had such findings as suggesting old pulmonary inflammation though they had no symptoms of respiratory diseases. This study suggests that hilar Gallium-67 accumulation has no correlation with the active inflammation of the lymphnodes. (author)

High-Temperature Decomposition of Brønsted Acid Sites in Gallium-Substituted Zeolites

Energy Technology Data Exchange (ETDEWEB)

K Al-majnouni; N Hould; W Lonergan; D Vlachos; R Lobo

2011-12-31

The dehydroxylation of Broensted acid sites (BAS) in Ga-substituted zeolites was investigated at temperatures up to 850 C using X-ray absorption spectroscopy (XAS), Fourier transform infrared spectroscopy (FTIR), and mass spectrometry-temperature programmed desorption (MS-TPD). X-ray absorption near-edge spectroscopy (XANES) revealed that the majority of gallium has tetrahedral coordination even after complete dehydroxylation. The interatomic gallium-oxygen distance and gallium coordination number determined by extended X-ray absorption fine structure (EXAFS) are consistent with gallium in tetrahedral coordination at low T (< 550 C). Upon heating Ga-Beta and Ga-ZSM5 to 850 C, analysis of the EXAFS showed that 70 and 80% of the gallium was still in tetrahedral coordination. The remainder of the gallium was found to be in octahedral coordination. No trigonal Ga atoms were observed. FTIR measurements carried out at similar temperatures show that the intensity of the OH vibration due to BAS has been eliminated. MS-TPD revealed that hydrogen in addition to water evolved from the samples during dehydroxylation. This shows that dehydrogenation in addition to dehydration is a mechanism that contributes to BAS decomposition. Dehydrogenation was further confirmed by exposing the sample to hydrogen to regenerate some of the BAS as monitored by FTIR and MS-TPD.

Metal-Organic Chemical Vapor Epitaxy of GaN on Si(111) for Optoelectronic Applications

National Research Council Canada - National Science Library

Kaloyeros, A

1998-01-01

...%. Films were hexagonal and polycrystalline with 3 nitride bi-layer buffers, with annealing, allowed stoichiometric gallium nitride growth of up to 6000 A, but the temperatures used were not high enough...

Nitride alloy layer formation of duplex stainless steel using nitriding process

Science.gov (United States)

Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

2018-01-01

Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

Gallium oxide nanorods as novel, safe and durable anode material for Li- and Na-ion batteries

International Nuclear Information System (INIS)

Meligrana, Giuseppina; Lueangchaichaweng, Warunee; Colò, Francesca; Destro, Matteo; Fiorilli, Sonia; Pescarmona, Paolo P.; Gerbaldi, Claudio

2017-01-01

Highlights: • Gallium oxide nanorods applied for the first time as anode material for Li-/Na-ion batteries. • Durable ambient temperature cycling (400 cycles) was observed in Li-based cells. • Stable reversible cycling (> 200 mAh g"−"1) was achieved for the first time in Na-based cells. - Abstract: Gallium oxide nanorods prepared by template-free synthesis are reported for the first time as safe and durable anode material for lithium- and sodium-ion batteries. The ambient temperature electrochemical response of the nanorods, tested by cyclic voltammetry and constant-current reversible cycling, is highly satisfying in terms of remarkable stability and capacity retention upon long-term operation (400 cycles), even at high current densities. The newly proposed application of gallium oxide nanorods as electrode material is notable also because this material can preserve the electrical pathway without the need of any “buffer matrix” to compensate for the expansion upon lithium or sodium reversible storage. The highly promising electrochemical performance is attributed to the high aspect ratio and high surface area that stem from the nanorod morphology and which can lead to short diffusion path and fast kinetics of both cations (Li"+ or Na"+) and electrons.

Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

Energy Technology Data Exchange (ETDEWEB)

Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

2016-07-30

Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

Interactions of zircaloy cladding with gallium -- 1997 status

International Nuclear Information System (INIS)

Wilson, D.F.; DiStefano, J.R.; King, J.F.; Manneschmidt, E.T.; Strizak, J.P.

1997-11-01

A four phase program has been implemented to evaluate the effect of gallium in mixed oxide (MOX) fuel derived from weapons grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in LWR. This graded, four phase experimental program will evaluate the performance of prototypic Zircaloy cladding materials against: (1) liquid gallium (Phase 1), (2) various concentrations of Ga 2 O 3 (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of an initial series of tests for phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement (LME), and (3) corrosion mechanical. These tests are designed to determine the corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at ≥ 300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (in parts per million) of gallium in the MOX fuel. While continued migration of gallium into the initially formed intermetallic compound results in large stresses that can lead to distortion, this is also highly unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed

Low-Temperature Nitriding of Deformed Austenitic Stainless Steels with Various Nitrogen Contents Obtained by Prior High-Temperature Solution Nitriding

DEFF Research Database (Denmark)

Bottoli, Federico; Winther, Grethe; Christiansen, Thomas Lundin

2016-01-01

In the past decades, high nitrogen steels (HNS) have been regarded as substitutes for conventional austenitic stainless steels because of their superior mechanical and corrosion properties. However, the main limitation to their wider application is their expensive production process....... As an alternative, high-temperature solution nitriding has been applied to produce HNS from three commercially available stainless steel grades (AISI 304L, AISI 316, and EN 1.4369). The nitrogen content in each steel alloy is varied and its influence on the mechanical properties and the stability of the austenite...... investigated. Both hardness and yield stress increase and the alloys remain ductile. In addition, strain-induced transformation of austenite to martensite is suppressed, which is beneficial for subsequent low-temperature nitriding of the surface of deformed alloys. The combination of high- and low...

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Lee, Hae-Min [Institute of NT-IT Fusion Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Jeong, Gyoung Hwa [Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Banyeon 100, Ulsan 44919 (Korea, Republic of); Kim, Sang-Wook [Department of Molecular Science and Technology, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of); Kim, Chang-Koo, E-mail: changkoo@ajou.ac.kr [Department of Chemical Engineering and Department of Energy Systems Research, Ajou University, 206 Worldcup-ro, Yeongtong-gu, Suwon 16499 (Korea, Republic of)

2017-04-01

Highlights: • Vanadium nitrides were directly synthesized by a one-step chemical precipitation method. • This method was carried out at a low temperature of 70 °C. • Vanadium nitrides had a specific capacitance of 598 F/g. • The equivalent series resistance of the vanadium nitride electrode was 1.42 Ω after 5000 cycles. - Abstract: Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2–5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Passivation of Ge/high-κ interface using RF Plasma nitridation

Science.gov (United States)

Dushaq, Ghada; Nayfeh, Ammar; Rasras, Mahmoud

2018-01-01

In this paper, plasma nitridation of a germanium surface using NH3 and N2 gases is performed with a standard RF-PECVD method at a substrate temperature of 250 °C. The structural and optical properties of the Ge surface have been investigated using Atomic Force Microscopy (AFM), Fourier Transform Infrared Spectroscopy (FT-IR), and Variable Angle Spectroscopic Ellipsometery (VASE). Study of the Ge (100) surface revealed that it is nitrated after plasma treatment while the GeO2 regrowth on the surface has been suppressed. Also, stability of the treated surface under air exposure is observed, where all the measurements were performed at room ambient. The electrical characteristics of fabricated Al/Ti/HfO2/GeON/p-Ge capacitors using the proposed surface treatment technique have been investigated. The C-V curves indicated a negligible hysteresis compared to ˜500 mV observed in untreated samples. Additionally, the C-V characteristic is used to extract the high-κ/Ge interface trap density using the most commonly used methods in determining the interface traps. The discussion includes the Dit calculation from the high-low frequency (Castagné-Vapaille) method and Terman (high-frequency) method. The high-low frequency method indicated a low interface trap density of ˜2.5 × 1011 eV-1.cm-2 compared to the Terman method. The J-V measurements revealed more than two orders of magnitude reduction of the gate leakage. This improved Ge interface quality is a promising low-temperature technique for fabricating high-performance Ge MOSFETs.

Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

Energy Technology Data Exchange (ETDEWEB)

Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

2008-01-01

Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

Study on microstructure change of Uranium nitride coated U-7wt%Mo powder by heat treatment

Energy Technology Data Exchange (ETDEWEB)

Cho, Woo Hyoung; Park, Jae Soon; Lee, Hae In; Kim, Woo Jeong; Yang, Jae Ho; Park, Jong Man [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2011-10-15

Uranium-molybdenum alloy particle dispersion fuel in an aluminum matrix with a high uranium density has been developed for a high performance research reactor in the RERTR program. In order to retard the fuel-matrix interaction in U-Mo/Al dispersion fuel in which the U-Mo fuel particles were dispersed in Al matrix, nitride layer coated U-Mo fuel particle has been designed and techniques to fabricate nitride-layer coated U-7wt%Mo particles have been developed in our lab. In this study, uranium nitride coated U-Mo particle has heat treatment for several times and degree. And we suggested for interaction layer remedy in U-Mo dispersion fuel. We investigate effect of heat treatment interaction layer evolution on uranium nitride coated U-Mo powder. The EDS and XRD analysis to investigate the phase evolution in uranium nitride coated layer is also a part of the present work

Discrete Charge Storage Nonvolatile Memory Based on Si Nanocrystals with Nitridation Treatment

International Nuclear Information System (INIS)

Xian-Gao, Zhang; Kun-Ji, Chen; Zhong-Hui, Fang; Xin-Ye, Qian; Guang-Yuan, Liu; Xiao-Fan, Jiang; Zhong-Yuan, Ma; Jun, Xu; Xin-Fan, Huang; Jian-Xin, Ji; Fei, He; Kuang-Bao, Song; Jun, Zhang; Hui, Wan; Rong-Hua, Wang

2010-01-01

A nonvolatile memory device with nitrided Si nanocrystals embedded in a Boating gate was fabricated. The uniform Si nanocrystals with high density (3 × 10 11 cm −2 ) were deposited on ultra-thin tunnel oxide layer (∼ 3 nm) and followed by a nitridation treatment in ammonia to form a thin silicon nitride layer on the surface of nanocrystals. A memory window of 2.4 V was obtained and it would be larger than 1.3 V after ten years from the extrapolated retention data. The results can be explained by the nitrogen passivation of the surface traps of Si nanocrystals, which slows the charge loss rate. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Concentration of gallium in the Permo-Carboniferous coals of China

Energy Technology Data Exchange (ETDEWEB)

Zhao, Cunliang; Qin, Shenjun; Yang, Yinchao; Li, Yanheng; Lin, Mingyue [Hebei University of Engineering, Handan (China)

2009-10-15

Gallium is widely used in electronic industry and its current price is about 500 US dollars per kilogram. It has been found that its contents are very high in Permo-Carboniferous coal of China. In order to look for valuable associated gallium deposits in coal, gallium contents of 177 coal samples were determined by using inductively coupled plasma-mass spectrometry (ICP-MS) and the data of 873 coal samples from Chinese Permo-Carboniferous coalfields were collected. The results show that the average gallium concentration of Chinese Permo-Carboniferous coals is 15.49{mu}g{center_dot}g{sup -1}. There are two concentration types of gallium in Chinese Permo-Carboniferous coals: one type is that gallium has enriched to an ore deposit, and another type is that gallium is locally enriched in coal seams, but has not formed a valuable associated gallium ore deposit. The gallium concentration in Chinese Permo-Carboniferous coal may have several different sources: concentration in sedimentation stage, magmatic hydrothermal inputs and low-temperature hydrothermal fluids.

Broccoli-like porous carbon nitride from ZIF-8 and melamine for high performance supercapacitors

Science.gov (United States)

Cai, Chenglong; Zou, Yongjin; Xiang, Cuili; Chu, Hailiang; Qiu, Shujun; Sui, Qingli; Xu, Fen; Sun, Lixian; Shah, Afzal

2018-05-01

Broccoli-like porous carbon nitride is synthesized by simple one-step carbonization of a composite comprising a Zn-based zeolitic imidazolate framework (ZIF-8) and melamine. The introduction of melamine into the ZIF-8 framework not only increases the N content of the composite and the surface area of the carbonization product, but also induces the formation of a flower-like structure. The carbon obtained from the ZIF-8/melamine composite by the proposed carbonization process at a temperature of 800 °C (ZM-C-800) is found to have a unique three-dimensional broccoli-like shape, a nanoscale size, and an extremely high doping N content (28.3 at.%). These properties substantially improve the electrochemical performance of ZM-C-800, as represented by a high specific capacitance of 359.1 F g-1 at a current density of 1 A g-1, much higher than that of ZIF-8. Furthermore, a symmetric supercapacitor fabricated with two ZM-C-800 electrodes exhibits a power density of 498.5 W kg-1 for an energy density of 11.4 Wh kg-1. This indicates the strong potential of ZM-C-800 for use in the fabrication of energy storage devices.

Effect of microstructure on the high temperature strength of nitride

Indian Academy of Sciences (India)

Effect of microstructure on the high temperature strength of nitride bonded silicon carbide composite. J Rakshit P K Das. Composites Volume ... The effect of these parameters on room temperature and high temperature strength of the composite up to 1300°C in ambient condition were studied. The high temperature flexural ...

High frequency Soft Switching Half Bridge Series-Resonant DC-DC Converter Utilizing Gallium Nitride FETs

DEFF Research Database (Denmark)

Nour, Yasser; Knott, Arnold; Petersen, Lars Press

2017-01-01

The need for efficient, smaller, lighter and cheaper power supply units drive the investigation of using high switching frequency soft switching resonant converters. This work presents an 88% efficient 48V nominal input converter switching at 6 MHz and output power of 21 Watts achieving power...... density of 7 W/cm3 for Power-over-Ethernet LED lighting applications. The switching frequency is used to control the output current delivered to the load resistance. The converter was tested using a constant resistance load. The performance and thermal behavior were investigated and reported in this work....

High mobility two-dimensional electron gases in nitride heterostructures with high Al composition AlGaN alloy barriers

International Nuclear Information System (INIS)

Li Guowang; Cao Yu; Xing Huili Grace; Jena, Debdeep

2010-01-01

We report high-electron mobility nitride heterostructures with >70% Al composition AlGaN alloy barriers grown by molecular beam epitaxy. Direct growth of such AlGaN layers on GaN resulted in hexagonal trenches and a low mobility polarization-induced charge. By applying growth interruption at the heterojunction, the surface morphology improved dramatically and the room temperature two-dimensional electron gas (2DEG) mobility increased by an order of magnitude, exceeding 1300 cm 2 /V s. The 2DEG density was tunable at 0.4-3.7x10 13 /cm 2 by varying the total barrier thickness (t). Surface barrier heights of the heterostructures were extracted and exhibited dependence on t.

Uptake of gallium-67 citrate in clean surgical incisions after colorectal surgery

International Nuclear Information System (INIS)

Lin Wanyu; Wang Shyhjen; Tsai Shihchuan; Chao Tehsin

2001-01-01

Non-specific accumulation of gallium-67 citrate (gallium) in uncomplicated surgical incisions is not uncommon. It is important to know the normal pattern of gallium uptake at surgical incision sites in order to properly interpret the gallium scan when investigating possible wound infection in patients who have undergone abdominal surgery. We studied 42 patients without wound infection after colorectal surgery and performed gallium scans within 40 days after surgery. Patients were divided into three groups according to the interval between the operation and the scan. In group A (26 patients) gallium scan was performed within 7 days after surgery, in group B (8 patients) between 8 and 14 days after surgery, and in group C (8 patients) between 15 and 40 days after surgery. Our data showed that in group A, 61.5% had gallium accumulation at the surgical incision site. In group B, 50% had accumulation of gallium at the surgical incision site, while in group C only one patient (12.5%) showed gallium uptake. It is concluded that the incidence of increased gallium uptake at clean surgical incision sites is high after colorectal surgery. Nuclear medicine physicians should bear in mind the high incidence of non-specific gallium uptake at such sites during the interpretation of possible wound infection in patients after colorectal surgery. (orig.)

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

Science.gov (United States)

Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

2017-04-01

Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Pulsed electron-beam annealing of selenium-implanted gallium arsenide

International Nuclear Information System (INIS)

Inada, T.; Tokunaga, K.; Taka, S.

1979-01-01

Electrical properties of selenium-implanted gallium arsenide annealed by a single shot of high-power pulsed electron beams have been investigated by differential Hall-effect and sheet-resistivity measurements. It has been shown that higher electrical activation of implanted selenium can be obtained after electron-beam annealing at an incident energy density of 1.2 J/cm 2 , independent of heating of GaAs substrate during implantation. Measured carrier concentrations exhibit uniformly distributed profiles having carrier concentrations of 2--3 x 10 19 /cm 3 , which is difficult to realize by conventional thermal annealing

High energy density and efficiency achieved in nanocomposite film capacitors via structure modulation

Science.gov (United States)

Zeng, Yi; Shen, Zhong-Hui; Shen, Yang; Lin, Yuanhua; Nan, Ce-Wen

2018-03-01

Flexible dielectric polymer films with high energy storage density and high charge-discharge efficiency have been considered as promising materials for electrical power applications. Here, we design hierarchical structured nanocomposite films using nonlinear polymer poly(vinylidene fluoride-HFP) [P(VDF-HFP)] with inorganic h-boron nitride (h-BN) nanosheets by electrospinning and hot-pressing methods. Our results show that the addition of h-BN nanosheets and the design of the hierarchical multilayer structure in the nanocomposites can remarkably enhance the charge-discharge efficiency and energy density. A high charge-discharge efficiency of 78% and an energy density of 21 J/cm3 can be realized in the 12-layered PVDF/h-BN nanocomposite films. Phase-field simulation results reveal that the spatial distribution of the electric field in these hierarchical structured films affects the charge-discharge efficiency and energy density. This work provides a feasible route, i.e., structure modulation, to improve the energy storage performances for nanocomposite films.

Evaporation of carbon using electrons of a high density plasma

International Nuclear Information System (INIS)

Muhl, S.; Camps, E.; Escobar A, L.; Garcia E, J.L.; Olea, O.

1999-01-01

The high density plasmas are used frequently in the preparation of thin films or surface modification, for example to nitridation. In these processes, are used mainly the ions and the neutrals which compose the plasma. However, the electrons present in the plasma are not used, except in the case of chemical reactions induced by collisions, although the electron bombardment usually get hot the work piece. Through the adequate polarization of a conductor material, it is possible to extract electrons from a high density plasma at low pressure, that could be gotten the evaporation of this material. As result of the interaction between the plasma and the electron flux with the vapor produced, this last will be ionized. In this work, it is reported the use of this novelty arrangement to prepare carbon thin films using a high density argon plasma and a high purity graphite bar as material to evaporate. It has been used substrates outside plasma and immersed in the plasma. Also it has been reported the plasma characteristics (temperature and electron density, energy and ions flux), parameters of the deposit process (deposit rate and ion/neutral rate) as well as the properties of the films obtained (IR absorption spectra and UV/Vis, elemental analysis, hardness and refractive index. (Author)

Simultaneous specimen current and time-dependent cathodoluminescence measurements on gallium nitride

Energy Technology Data Exchange (ETDEWEB)

Campo, E. M., E-mail: e.campo@bangor.ac.uk; Hopkins, L. [School of Electronic Engineering, Bangor University, Gwynedd LL57 1UT (United Kingdom); Pophristic, M. [Department of Chemistry and Biochemistry, University of the Science, Philadelphia, Pennsylvania 19104 (United States); Ferguson, I. T. [Department of Electrical and Computer Engineering, Missouri University of Science and Technology, Rolla, Missouri 65409 (United States)

2016-06-28

Time-dependent cathodoluminescence (CL) and specimen current (SC) are monitored to evaluate trapping behavior and evolution of charge storage. Examination of CL and SC suggests that the near band edge emission in GaN is reduced primarily by the activation of traps upon irradiation, and Gallium vacancies are prime candidates. At the steady state, measurement of the stored charge by empiric-analytical methods suggests that all available traps within the interaction volume have been filled, and that additional charge is being stored interstitially, necessarily beyond the interaction volume. Once established, the space charge region is responsible for the steady state CL emission and, prior to build up, it is responsible for the generation of diffusion currents. Since the non-recombination effects resulting from diffusion currents that develop early on are analogous to those leading to device failure upon aging, this study is fundamental toward a holistic insight into optical properties in GaN.

Crystalline and amorphous carbon nitride films produced by high-energy shock plasma deposition

International Nuclear Information System (INIS)

Bursilll, L.A.; Peng, Julin; Gurarie, V.N.; Orlov, A.V.; Prawer, S.

1995-01-01

High-energy shock plasma deposition techniques are used to produce carbon-nitride films containing both crystalline and amorphous components. The structures are examined by high-resolution transmission electron microscopy, parallel-electron-energy loss spectroscopy and electron diffraction. The crystalline phase appears to be face-centered cubic with unit cell parameter approx. a=0.63nm and it may be stabilized by calcium and oxygen at about 1-2 at % levels. The carbon atoms appear to have both trigonal and tetrahedral bonding for the crystalline phase. There is PEELS evidence that a significant fraction of the nitrogen atoms have sp 2 trigonal bonds in the crystalline phase. The amorphous carbon-nitride film component varies from essentially graphite, containing virtually no nitrogen, to amorphous carbon-nitride containing up to 10 at % N, where the fraction of sp 3 bonds is significant. 15 refs., 5 figs

Fabrication and properties of gallium metallic photonic crystals

International Nuclear Information System (INIS)

Kozhevnikov, V.F.; Diwekar, M.; Kamaev, V.P.; Shi, J.; Vardeny, Z.V.

2003-01-01

Gallium metallic photonic crystals with 100% filling factor have been fabricated via infiltration of liquid gallium into opals of 300-nm silica spheres using a novel high pressure-high temperature technique. The electrical resistance of the Ga-opal crystals was measured at temperatures from 10 to 280 K. The data obtained show that Ga-opal crystals are metallic network with slightly smaller temperature coefficient of resistivity than that for bulk gallium. Optical reflectivity of bulk gallium, plain opal and several Ga-opal crystals were measured at photon energies from 0.3 to 6 eV. A pronounced photonic stop band in the visible spectral range was found in both the plain and Ga infiltrated opals. The reflectivity spectra also show increase in reflectivity below 0.6 eV; which we interpret as a significantly lower effective plasma frequency of the metallic mesh in the infiltrated opal compare to the plasma frequency in the pure metal

Structural variations in nanosized confined gallium

Energy Technology Data Exchange (ETDEWEB)

Lee, Min Kai [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Tien Cheng [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)] [Center for Micro/Nano Science of Technology, National Cheng Kung University, Tainan 70101, Taiwan, ROC (China); Charnaya, E.V., E-mail: charnaya@live.co [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China)] [Institute of Physics, St. Petersburg State University, St. Petersburg, Petrodvorets 198504 (Russian Federation); Sheu, Hwo-Shuenn [National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan (China); Kumzerov, Yu.A. [A.F. Ioffe Physico-Technical Institute RAS, St. Petersburg, 194021 (Russian Federation)

2010-03-29

The complex crystalline structure of gallium under nanoconfinement was revealed by synchrotron radiation x-ray powder diffraction. Nanoconfinement was shown to stabilize delta-Ga which is metastable in bulk. Two new gallium phases named iota- and kappa-Ga were found upon cooling below room temperature. These crystalline modifications were stable and coexisted with known gallium phases. Correlations between confined gallium particle shapes and emergence of particular crystalline phases were observed. Melting and freezing temperatures for different gallium phases were obtained. Remarkable supercooling of liquid gallium was seen in 3.5 nm pores.

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

Method for producing polycrystalline boron nitride

International Nuclear Information System (INIS)

Alexeevskii, V.P.; Bochko, A.V.; Dzhamarov, S.S.; Karpinos, D.M.; Karyuk, G.G.; Kolomiets, I.P.; Kurdyumov, A.V.; Pivovarov, M.S.; Frantsevich, I.N.; Yarosh, V.V.

1975-01-01

A mixture containing less than 50 percent of graphite-like boron nitride treated by a shock wave and highly defective wurtzite-like boron nitride obtained by a shock-wave method is compressed and heated at pressure and temperature values corresponding to the region of the phase diagram for boron nitride defined by the graphite-like compact modifications of boron nitride equilibrium line and the cubic wurtzite-like boron nitride equilibrium line. The resulting crystals of boron nitride exhibit a structure of wurtzite-like boron nitride or of both wurtzite-like and cubic boron nitride. The resulting material exhibits higher plasticity as compared with polycrystalline cubic boron nitride. Tools made of this compact polycrystalline material have a longer service life under impact loads in machining hardened steel and chilled iron. (U.S.)

Phosphorus Dimerization in Gallium Phosphide at High Pressure

Energy Technology Data Exchange (ETDEWEB)

Lavina, Barbara [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Kim, Eunja [Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Cynn, Hyunchae [Lawrence Livermore National Laboratory, Livermore, California 94550, United States; Weck, Philippe F. [Sandia National Laboratories, Albuquerque, New Mexico 87185, United States; Seaborg, Kelly [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Department of Physics and Astronomy, University of Nevada, Las Vegas, Nevada 89154, United States; Siska, Emily [High Pressure Science and Engineering Center, University of Nevada, Las Vegas, Nevada 89154, United States; Meng, Yue [HPCAT, Carnegie Institution of Washington, Argonne, Illinois 60439, United States; Evans, William [Lawrence Livermore National Laboratory, Livermore, California 94550, United States

2018-02-09

Using combined experimental and computational approaches, we show that at 43 GPa and 1300 K gallium phosphide adopts the super-Cmcm structure, here indicated with its Pearson notation oS24. First-principles enthalpy calculations demonstrate that this structure is more thermodynamically stable above ~20 GPa than previously proposed polymorphs. Here, in contrast to other polymorphs, the oS24 phase shows a strong bonding differentiation and distorted fivefold coordination geometries of both P atoms. The shortest bond of the phase is a single covalent P–P bond measuring 2.171(11) Å at synthesis pressure. Phosphorus dimerization in GaP sheds light on the nature of the super-Cmcm phase and provides critical new insights into the high-pressure polymorphism of octet semiconductors. Bond directionality and anisotropy explain the relatively low symmetry of this high-pressure phase.

Hot pressing of uranium nitride and mixed uranium plutonium nitride

International Nuclear Information System (INIS)

Chang, J.Y.

1975-01-01

The hot pressing characteristics of uranium nitride and mixed uranium plutonium nitride were studied. The utilization of computer programs together with the experimental technique developed in the present study may serve as a useful purpose of prediction and fabrication of advanced reactor fuel and other high temperature ceramic materials for the future. The densification of nitrides follow closely with a plastic flow theory expressed as: d rho/ dt = A/T(t) (1-rho) [1/1-(1-rho)/sup 2/3/ + B1n (1-rho)] The coefficients, A and B, were obtained from experiment and computer curve fitting. (8 figures) (U.S.)

High Kinetic Energy Penetrator Shielding and High Wear Resistance Materials Fabricated with Boron Nitride Nanotubes (BNNTS) and BNNT Polymer Composites

Science.gov (United States)

Kang, Jin Ho (Inventor); Sauti, Godfrey (Inventor); Smith, Michael W. (Inventor); Jordan, Kevin C. (Inventor); Park, Cheol (Inventor); Bryant, Robert George (Inventor); Lowther, Sharon E. (Inventor)

2015-01-01

Boron nitride nanotubes (BNNTs), boron nitride nanoparticles (BNNPs), carbon nanotubes (CNTs), graphites, or combinations, are incorporated into matrices of polymer, ceramic or metals. Fibers, yarns, and woven or nonwoven mats of BNNTs are used as toughening layers in penetration resistant materials to maximize energy absorption and/or high hardness layers to rebound or deform penetrators. They can be also used as reinforcing inclusions combining with other polymer matrices to create composite layers like typical reinforcing fibers such as Kevlar.RTM., Spectra.RTM., ceramics and metals. Enhanced wear resistance and usage time are achieved by adding boron nitride nanomaterials, increasing hardness and toughness. Such materials can be used in high temperature environments since the oxidation temperature of BNNTs exceeds 800.degree. C. in air. Boron nitride based composites are useful as strong structural materials for anti-micrometeorite layers for spacecraft and space suits, ultra strong tethers, protective gear, vehicles, helmets, shields and safety suits/helmets for industry.

Optimization of nitridation conditions for high quality inter-polysilicon dielectric layers

NARCIS (Netherlands)

Klootwijk, J.H.; Bergveld, H.J.; van Kranenburg, H.; Woerlee, P.H.; Wallinga, Hans

1996-01-01

Nitridation of deposited high temperature oxides (HTO) was studied to form high quality inter-polysilicon dielectric layers for embedded non volatile memories. Good quality dielectric layers were obtained earlier by using an optimized deposition of polysilicon and by performing a post-dielectric

Medical Applications and Toxicities of Gallium Compounds

Directory of Open Access Journals (Sweden)

Christopher R. Chitambar

2010-05-01

Full Text Available Over the past two to three decades, gallium compounds have gained importance in the fields of medicine and electronics. In clinical medicine, radioactive gallium and stable gallium nitrate are used as diagnostic and therapeutic agents in cancer and disorders of calcium and bone metabolism. In addition, gallium compounds have displayed anti-inflammatory and immunosuppressive activity in animal models of human disease while more recent studies have shown that gallium compounds may function as antimicrobial agents against certain pathogens. In a totally different realm, the chemical properties of gallium arsenide have led to its use in the semiconductor industry. Gallium compounds, whether used medically or in the electronics field, have toxicities. Patients receiving gallium nitrate for the treatment of various diseases may benefit from such therapy, but knowledge of the therapeutic index of this drug is necessary to avoid clinical toxicities. Animals exposed to gallium arsenide display toxicities in certain organ systems suggesting that environmental risks may exist for individuals exposed to this compound in the workplace. Although the arsenic moiety of gallium arsenide appears to be mainly responsible for its pulmonary toxicity, gallium may contribute to some of the detrimental effects in other organs. The use of older and newer gallium compounds in clinical medicine may be advanced by a better understanding of their mechanisms of action, drug resistance, pharmacology, and side-effects. This review will discuss the medical applications of gallium and its mechanisms of action, the newer gallium compounds and future directions for development, and the toxicities of gallium compounds in current use.

Toward achieving flexible and high sensitivity hexagonal boron nitride neutron detectors

Science.gov (United States)

Maity, A.; Grenadier, S. J.; Li, J.; Lin, J. Y.; Jiang, H. X.

2017-07-01

Hexagonal boron nitride (h-BN) detectors have demonstrated the highest thermal neutron detection efficiency to date among solid-state neutron detectors at about 51%. We report here the realization of h-BN neutron detectors possessing one order of magnitude enhancement in the detection area but maintaining an equal level of detection efficiency of previous achievement. These 3 mm × 3 mm detectors were fabricated from 50 μm thick freestanding and flexible 10B enriched h-BN (h-10BN) films, grown by metal organic chemical vapor deposition followed by mechanical separation from sapphire substrates. Mobility-lifetime results suggested that holes are the majority carriers in unintentionally doped h-BN. The detectors were tested under thermal neutron irradiation from californium-252 (252Cf) moderated by a high density polyethylene moderator. A thermal neutron detection efficiency of ˜53% was achieved at a bias voltage of 200 V. Conforming to traditional solid-state detectors, the realization of h-BN epilayers with enhanced electrical transport properties is the key to enable scaling up the device sizes. More specifically, the present results revealed that achieving an electrical resistivity of greater than 1014 Ωṡcm and a leakage current density of below 3 × 10-10 A/cm2 is needed to fabricate large area h-BN detectors and provided guidance for achieving high sensitivity solid state neutron detectors based on h-BN.

Plasma-nitriding assisted micro-texturing into stainless steel molds

Directory of Open Access Journals (Sweden)

Aizawa Tatsuhiko

2015-01-01

Full Text Available Micro-texturing has grown up to be one of the most promising procedures. This related application required for large-area, fine micro-texturing onto the stainless steel mold materials. A new method other than laser-machining, micro-milling or micro-EDM was awaited for further advancement of this micro-texturing. In the present paper, a plasma nitriding assisted micro-texturing was developed to make various kinds of micro-patterns onto the martensitic stainless steels. First, original patterns were printed onto the surface of substrate by using the ink-jet printer. Then, the masked substrate was subjected to high density plasma nitriding; the un-masked surfaces were nitrided to have higher hardness. This nitrided substrate was further treated by sand-blasting to selectively dig the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel substrate was fabricated as a mold to duplicate these micro-patterns onto the work materials. The spatial resolution and depth profile controllability of this plasma nitriding assisted micro-texturing was investigated for variety of initial micro-patterns. The original size and dimension of initial micro-patterns were precisely compared with the three dimensional geometry of micro-textures after blasting treatment. The plastic cover case for smart cellular phones was employed to demonstrate how useful this processing is in practice.

CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

KAUST Repository

Pourhashemi, A.

2016-10-11

Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

KAUST Repository

Pourhashemi, A.; Farrell, R.M.; Cohen, D.A.; Becerra, D.L.; DenBaars, S.P.; Nakamura, S.

2016-01-01

Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

International Nuclear Information System (INIS)

Hsiao, C.-L.; Wu, C.-T.; Hsu, H.-C.; Hsu, G.-M.; Chen, L.-C.; Liu, T.-W.; Shiao, W.-Y.; Yang, C. C.; Gaellstroem, Andreas; Holtz, Per-Olof; Chen, C.-C.; Chen, K.-H.

2008-01-01

High-phase-purity zinc-blende (zb) InN thin film has been grown by plasma-assisted molecular-beam epitaxy on r-plane sapphire substrate pretreated with nitridation. X-ray diffraction analysis shows that the phase of the InN films changes from wurtzite (w) InN to a mixture of w-InN and zb-InN, to zb-InN with increasing nitridation time. High-resolution transmission electron microscopy reveals an ultrathin crystallized interlayer produced by substrate nitridation, which plays an important role in controlling the InN phase. Photoluminescence emission of zb-InN measured at 20 K shows a peak at a very low energy, 0.636 eV, and an absorption edge at ∼0.62 eV is observed at 2 K, which is the lowest bandgap reported to date among the III-nitride semiconductors

Window structure for passivating solar cells based on gallium arsenide

Science.gov (United States)

Barnett, Allen M. (Inventor)

1985-01-01

Passivated gallium arsenide solar photovoltaic cells with high resistance to moisture and oxygen are provided by means of a gallium arsenide phosphide window graded through its thickness from arsenic rich to phosphorus rich.

High-Efficiency Nitride-Based Solid-State Lighting. Final Technical Progress Report

International Nuclear Information System (INIS)

Paul T. Fini; Shuji Nakamura

2005-01-01

In this final technical progress report we summarize research accomplished during Department of Energy contract DE-FC26-01NT41203, entitled ''High-Efficiency Nitride-Based Solid-State Lighting''. Two teams, from the University of California at Santa Barbara (Principle Investigator: Dr. Shuji Nakamura) and the Lighting Research Center at Rensselaer Polytechnic Institute (led by Dr. N. Narendran), pursued the goals of this contract from thin film growth, characterization, and packaging/luminaire design standpoints. The UCSB team initially pursued the development of blue gallium nitride (GaN)-based vertical-cavity surface-emitting lasers, as well as ultraviolet GaN-based light emitting diodes (LEDs). In Year 2, the emphasis shifted to resonant-cavity light emitting diodes, also known as micro-cavity LEDs when extremely thin device cavities are fabricated. These devices have very directional emission and higher light extraction efficiency than conventional LEDs. Via the optimization of thin-film growth and refinement of device processing, we decreased the total cavity thickness to less than 1 (micro)m, such that micro-cavity effects were clearly observed and a light extraction efficiency of over 10% was reached. We also began the development of photonic crystals for increased light extraction, in particular for so-called ''guided modes'' which would otherwise propagate laterally in the device and be re-absorbed. Finally, we pursued the growth of smooth, high-quality nonpolar a-plane and m-plane GaN films, as well as blue light emitting diodes on these novel films. Initial nonpolar LEDs showed the expected behavior of negligible peak wavelength shift with increasing drive current. M-plane LEDs in particular show promise, as unpackaged devices had unsaturated optical output power of ∼ 3 mW at 200 mA drive current. The LRC's tasks were aimed at developing the subcomponents necessary for packaging UCSB's light emitting diodes, and packaging them to produce a white light

Effects of Ion-Nitriding on the Pitting Behavior of Austenitic Stainless Steels Containing Mo

International Nuclear Information System (INIS)

Cho, Yong Seok; Choe, Han Cheol; Kim, Kwan Hyu

1994-01-01

Austenitic stainless steels(ASS) containing 1-4wt% Mo were ion-nitrided at 550 .deg. C for 20hrs and 30hrs, and their pitting behavior was examined by the electrochemical measurements. The formation of multiphase surface layers composed of the ε-{(Fe, Cr) 2- 3N} and the γ'-{(Fe, Cr) 4 N} phases was observed after ion-nitriding. The compound layers were approximately 50 μm thick after nitriding for 20hrs and 70 μm thick after 30hrs. Anodic polarization curves indicated that passive current density(I p ) and critical current density(I c ) increased, and corrosion potential(E corr ) decreased as a results of ion-nitriding. As the Mo content in the ion-nitrided ASS increased, passivation breakdown potential(E b ) and repassivation potential(E r ) increased, whereas I c and I p decreased. The pit nucleation time of the ASS nitrided for 20hrs was 10 minutes, while that of the 30hr nitrided samples was 3 minutes. The nucleation and growth of pits were significantly increased with the decreasing of Mo content as well as the increasing of ion-nitriding time

Prospects for recovering gallium from extracted coal

Energy Technology Data Exchange (ETDEWEB)

Ratynskiy, V M; Reznik, A M; Zekel, L A; Zharov, Yu N

1979-01-01

The authors conducted research in order to establish the physical-chemical mechanisms governing the behavior of rare and dispersed elements within the thermal treatment processes used to treat coal and enrichment waste. New means are proposed for obtaining concentrations of gallium. These methods are under consideration primarily for the isolation of gallium as a by-product during the production of aggloporite from coal waste. The authors examine in detail the results of research dealing with the transfer of gallium compounds in a solution, the extraction of gallium from solutions, the separation of impurities from gallium, and the isolation of gallium from extract. Utilizing research results, the authors determine the expenditure coefficient and costs for additives used to extract gallium from waste by-products. The realization of this gallium extraction process from those products having the best prospects for gallium content resulted in economic savings.

Crystalline and amorphous phases in carbon nitride films produced by intense high-pressure plasma

International Nuclear Information System (INIS)

Gurarie, V.N.; Orlov, A.V.; Bursill, L.A.; JuLin, P.; Nugent, K.W.; Chon, J.W.; Prawer, S.

1997-01-01

Carbon-nitride films are prepared using a high-intensity pulsed plasma deposition technique. A wide range of nitrogen pressure and discharge intensity are used to investigate their effect on the morphology, nitrogen content, structure, bonding, phase composition and mechanical characteristics of the CN films deposited. Increasing the nitrogen pressure from 0.1 atm to 10 atm results in an increase of nitrogen incorporation into CN films to maximum of 45 at %. Under the high-energy density deposition conditions which involve ablation of the quartz substrate the CN films are found to incorporate in excess of 60 at %N. Raman spectra of these films contain sharp peaks characteristic of a distinct crystalline CN phase. TEM diffraction patterns for the films deposited below 1 atm unambiguously show the presence of micron-sized crystals displaying a cubic symmetry. (authors)

Electrochemical properties of lanthanum nitride with calcium nitride additions

International Nuclear Information System (INIS)

Lesunova, R.P.; Fishman, L.S.

1986-01-01

This paper reports on the electrochemical properties of lanthanum nitride with calcium nitride added. The lanthanum nitride was obtained by nitriding metallic lanthanum at 870 K in an ammonia stream. The product contained Cl, Pr, Nd, Sm, Fe, Ca, Cu, Mo, Mg, Al, Si, and Be. The calcium nitride was obtained by nitriding metallic calcium in a nitrogen stream. The conductivity on the LaN/C 3 N 2 system components are shown as a function of temperature. A table shows the solid solutions to be virtually electronic conductors and the lanthanum nitride a mixed conductor

Long-chain amine-templated synthesis of gallium sulfide and gallium selenide nanotubes

Science.gov (United States)

Seral-Ascaso, A.; Metel, S.; Pokle, A.; Backes, C.; Zhang, C. J.; Nerl, H. C.; Rode, K.; Berner, N. C.; Downing, C.; McEvoy, N.; Muñoz, E.; Harvey, A.; Gholamvand, Z.; Duesberg, G. S.; Coleman, J. N.; Nicolosi, V.

2016-06-01

We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization.We describe the soft chemistry synthesis of amine-templated gallium chalcogenide nanotubes through the reaction of gallium(iii) acetylacetonate and the chalcogen (sulfur, selenium) using a mixture of long-chain amines (hexadecylamine and dodecylamine) as a solvent. Beyond their role as solvent, the amines also act as a template, directing the growth of discrete units with a one-dimensional multilayer tubular nanostructure. These new materials, which broaden the family of amine-stabilized gallium chalcogenides, can be tentatively classified as direct large band gap semiconductors. Their preliminary performance as active material for electrodes in lithium ion batteries has also been tested, demonstrating great potential in energy storage field even without optimization. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01663d

Dislocation structure, aging processes and critical currents of vanadium-gallium alloys

International Nuclear Information System (INIS)

Pan, V.M.; Beletskii, Yu.I.; Flis, V.S.; Firstov, S.A.; Sarzhan, G.F.

1976-04-01

An electron microscopical investigation of the structural and phase changes in vanadium-gallium alloys was carried out in the range of concentrations corresponding to a supersaturated mixed crystal with bcc lattice during plastic deformation and annealing. The determined data were compared with the measured results of the electrophysical and superconducting properties. It was shown that the deformed and aged vanadium-gallium samples at 4.2 K could conduct a dissipation-free transport current with a density of 8 x 10 3 A/cm 2 in the transversal magnetic field of 60 kOe. Based on the experimental results of the dislocation structure, the mechanism and kinetics of the separation process, conclusions were drawn as to the character of the exceeding of the critical current density in the presence of a magnetic field in these compounds. (orig.) [de

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

Science.gov (United States)

Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

2015-12-18

The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

Auger electron spectroscopy analysis for growth interface of cubic boron nitride single crystals synthesized under high pressure and high temperature

Science.gov (United States)

Lv, Meizhe; Xu, Bin; Cai, Lichao; Guo, Xiaofei; Yuan, Xingdong

2018-05-01

After rapid cooling, cubic boron nitride (c-BN) single crystals synthesized under high pressure and high temperature (HPHT) are wrapped in the white film powders which are defined as growth interface. In order to make clear that the transition mechanism of c-BN single crystals, the variation of B and N atomic hybrid states in the growth interface is analyzed with the help of auger electron spectroscopy in the Li-based system. It is found that the sp2 fractions of B and N atoms decreases, and their sp3 fractions increases from the outer to the inner in the growth interface. In addition, Lithium nitride (Li3N) are not found in the growth interface by X-ray diffraction (XRD) experiment. It is suggested that lithium boron nitride (Li3BN2) is produced by the reaction of hexagonal boron nitride (h-BN) and Li3N at the first step, and then B and N atoms transform from sp2 into sp3 state with the catalysis of Li3BN2 in c-BN single crystals synthesis process.

Synthesis of gallium nitride and related oxides via ammonobasic reactive sublimation (ARS)

Energy Technology Data Exchange (ETDEWEB)

Hernández-Hernández, Luis Alberto; Aguilar-Hernández, Jorge R.; Mejía-García, Concepción; Cruz-Gandarilla, Francisco; Contreras-Puente, Gerardo [Escuela Superior de Física y Matemáticas, Instituto Politécnico Nacional, Ciudad de México (Mexico); Moure-Flores, Francisco de [Facultad de Química, Materiales-Energía, Universidad Autónoma de Querétaro (Mexico); Melo-Pereira, Osvaldo de, E-mail: schwarzerengelxv@hotmail.com [Facultad de Física, Universidad de La Habana, La Habana (Cuba)

2017-11-15

Ammonobasic reactive sublimation (ARS) is proposed as a novel method to synthesize GaN and related oxides. Results indicate that GaN growth occurs by a nitriding process of Ga and related oxides, establishing a direct dependence on NH{sub 4} OH amount added as a primary chemical reactive. The samples were grown on p-type Si (111) substrates inside a tube furnace, employing GaN powder and NH{sub 4} OH. The characterizations of the samples were carried out by XRD, SEM, EDS and PL techniques, revealing the influence of NH{sub 4} OH on the improvement of GaN synthesis and the enhancement of its optical and structural properties. (author)

Oxide, interface, and border traps in thermal, N2O, and N2O-nitrided oxides

International Nuclear Information System (INIS)

Fleetwood, D.M.; Saks, N.S.

1996-01-01

We have combined thermally stimulated-current (TSC) and capacitance endash voltage (C endash V) measurements to estimate oxide, interface, and effective border trap densities in 6 endash 23 nm thermal, N 2 O, and N 2 O-nitrided oxides exposed to ionizing radiation or high-field electron injection. Defect densities depend strongly on oxide processing, but radiation exposure and moderate high-field stress lead to similar trapped hole peak thermal energy distributions (between ∼1.7 and ∼2.0 eV) for all processes. This suggests that similar defects dominate the oxide charge trapping properties in these devices. Radiation-induced hole and interface trap generation efficiencies (0.1%endash 1%) in the best N 2 O and N 2 O-nitrided oxides are comparable to the best radiation hardened oxides in the literature. After ∼10 Mrad(SiO 2 ) x-ray irradiation or ∼10 mC/cm 2 constant current Fowler endash Nordheim injection, effective border trap densities as high as ∼5x10 11 cm -2 are inferred from C endash V hysteresis. These measurements suggest irradiation and high-field stress cause similar border trap energy distributions. In each case, even higher densities of compensating trapped electrons in the oxides (up to 2x10 12 cm -2 ) are inferred from combined TSC and C endash V measurements. These trapped electrons prevent conventional C endash V methods from providing accurate estimates of the total oxide trap charge density in many irradiation or high-field stress studies. Fewer compensating electrons per trapped hole (∼26%±5%) are found for irradiation of N 2 O and N 2 O-nitrided oxides than for thermal oxides (∼46%±7%). (Abstract Truncated)

Microstructure and corrosion resistance of nitrogen-rich surface layers on AISI 304 stainless steel by rapid nitriding in a hollow cathode discharge

Science.gov (United States)

Li, Yang; He, Yongyong; Zhang, Shangzhou; Wang, Wei; Zhu, Yijie

2018-01-01

Nitriding treatments have been successfully applied to austenitic stainless steels to improve their hardness and tribological properties. However, at temperatures above 450 °C, conventional plasma nitriding processes decrease the corrosion resistance due to the formation of CrN phases within the modified layer. In this work, AISI 304 austenitic stainless steels were efficiently treated by rapid plasma nitriding at a high temperature of 530 °C in a hollow cathode discharge. The enhanced ionization obtained in the hollow cathode configuration provided a high current density and, consequently, a high temperature could be attained in a short time. The nitrided layers were characterized by X-ray diffraction, scanning electron microscopy, atomic force microscopy, transmission electron microscopy and X-ray photoelectron spectroscopy. The results indicated that the dual-layer structure of the nitrided layer consists of a high-N face-centered cubic structure with a free CrN precipitate outer (top) layer and a nitrogen-expanded austenite S-phase bottom layer. The rapid nitriding-assisted hollow cathode discharge technique permits the use of high temperatures, as high as 530 °C, without promoting degradation in the corrosion resistance of stainless steel.

3D-atom probe analysis of Cr and Cu added nitriding steels

International Nuclear Information System (INIS)

Takahashi, J.; Kawakami, K.; Sugiyama, M.; Kawasaki, K.

2004-01-01

Full text: Nitriding treatment is a very effective method for hardening the surface of steels and realizing improvement in wear-resistance. Although this technology has been performed for many years, the precipitation and hardening mechanisms are not completely clear. It was not easy to observe very fine precipitates which may be generated in nitriding steels. We performed a three-dimensional atom probe analysis of the nitriding steel plate in which two kinds of precipitates were generated. Hot-rolled steel plates, which mainly contained Cr 1.0wt.% and Cu 1.3wt.%, were nitrided by annealing (550-6000 o ) in a mainly NH 3 atmosphere. The material before the nitriding had a hardness of about 100 Hv. By the nitriding, the surface hardness increased to more than 700 Hv, and the inside hardness also increased to 200 Hv. The specimens were taken from 0.15 mm, 0.3 mm and 0.8 mm depth from the surface, which mostly correspond to the peak, the half and the inside hardness, respectively. In the specimen of 0.8 mm depth, prolate spheroidal Cu precipitates of more than 8 nm in diameter were observed. In the specimen of 0.3 mm depth, plate-shape nitride precipitates of 6-10 nm in diameter were observed in addition to the Cu precipitates. Each Cu precipitate made a pair with the nitride precipitate. In the 0.15 mm depth specimen, Cr nitride precipitates of high volume density in addition to the pairs consisting of a Cu precipitate and a Cr nitride precipitate were observed. The size of the nitride precipitate forming the pair was slightly larger than that of the single Cr nitride precipitates. Furthermore, the denuded zone where the nitride precipitate does not exist was observed around the pairs. From these results, it was concluded that three stages of precipitation arose as follows: By the heat treatment of nitriding processing, Cu precipitates were generated first. Then, Cr nitride nucleated at the surface of the Cu precipitates inhomogeneously, and surrounding solute Cr was

Aluminum and gallium nuclei as microscopic probes for pulsed electron-nuclear double resonance diagnostics of electric-field gradient and spin density in garnet ceramics doped with paramagnetic ions

Science.gov (United States)

Uspenskaya, Yu. A.; Mamin, G. V.; Babunts, R. A.; Badalyan, A. G.; Edinach, E. V.; Asatryan, H. R.; Romanov, N. G.; Orlinskii, S. B.; Khanin, V. M.; Wieczorek, H.; Ronda, C.; Baranov, P. G.

2018-03-01

The presence of aluminum and gallium isotopes with large nuclear magnetic and quadrupole moments in the nearest environment of impurity ions Mn2+ and Ce3+ in garnets made it possible to use hyperfine and quadrupole interactions with these ions to determine the spatial distribution of the unpaired electron and the gradient of the electric field at the sites of aluminum and gallium in the garnet lattice. High-frequency (94 GHz) electron spin echo detected electron paramagnetic resonance and electron-nuclear double resonance measurements have been performed. Large difference in the electric field gradient and quadrupole splitting at octahedral and tetrahedral sites allowed identifying the positions of aluminum and gallium ions in the garnet lattice and proving that gallium first fills tetrahedral positions in mixed aluminum-gallium garnets. This should be taken into account in the development of garnet-based scintillators and lasers. It is shown that the electric field gradient at aluminum nuclei near Mn2+ possessing an excess negative charge in the garnet lattice is ca. 2.5 times larger than on aluminum nuclei near Ce3+.

Collector for recovering gallium from weapons plutonium

International Nuclear Information System (INIS)

Philip, C.V.; Anthony, R.G.; Chokkaram, S.

1998-09-01

Currently, the separation of gallium from weapons plutonium involves the use of aqueous processing using either solvent extraction of ion exchange. However, this process generates significant quantities of liquid radioactive wastes. A Thermally Induced Gallium Removal process, or TIGR, developed by researchers at Los Alamos National Laboratories, is a simpler alternative to aqueous processing. This research examined this process, and the behavior of gallium suboxide, a vapor that is swept away by passing hydrogen/argon over gallium trioxide/plutonium oxide heated at 1100 C during the TIGR process. Through experimental procedures, efforts were made to prevent the deposition of corrosive gallium onto furnace and vent surfaces. Experimental procedures included three options for gallium removal and collection: (1) collection of gallium suboxide through use of a cold finger; (2) collection by in situ air oxidation; and (3) collection of gallium on copper. Results conclude all three collection mechanisms are feasible. In addition, gallium trioxide exists in three crystalline forms, and each form was encountered during each experiment, and that each form will have a different reactivity

Deformation-Induced Dissolution and Precipitation of Nitrides in Austenite and Ferrite of a High-Nitrogen Stainless Steel

Science.gov (United States)

Shabashov, V. A.; Makarov, A. V.; Kozlov, K. A.; Sagaradze, V. V.; Zamatovskii, A. E.; Volkova, E. G.; Luchko, S. N.

2018-02-01

Methods of Mössbauer spectroscopy and electron microscopy have been used to study the effect of the severe plastic deformation by high pressure torsion in Bridgman anvils on the dissolution and precipitation of chromium nitrides in the austenitic and ferritic structure of an Fe71.2Cr22.7Mn1.3N4.8 high-nitrogen steel. It has been found that an alternative process of dynamic aging with the formation of secondary nitrides affects the kinetics of the dissolution of chromium nitrides. The dynamic aging of ferrite is activated with an increase in the deformation temperature from 80 to 573 K.

Gallium and copper radiopharmaceutical chemistry

International Nuclear Information System (INIS)

Green, M.A.

1991-01-01

Gallium and copper radionuclides have a long history of use in nuclear medicine. Table 1 presents the nuclear properties of several gallium and copper isotopes that either are used in the routine practice of clinical nuclear medicine or exhibit particular characteristics that might make them useful in diagnostic or therapeutic medicine. This paper will provide some historic perspective along with an overview of some current research directions in gallium and copper radiopharmaceutical chemistry. A more extensive review of gallium radiopharmaceutical chemistry has recently appeared and can be consulted for a more in-depth treatment of this topic

Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets

Directory of Open Access Journals (Sweden)

Yang-Zhe Su

2018-06-01

Full Text Available Gallium nitride (GaN is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases. The zinc-blende GaN has superior electronic and optical properties over wurtzite one. In this report, GaN nanodots can be fabricated by Ga metal droplets in ultra-high vacuum and then nitridation by nitrogen plasma. The size, shape, density, and crystal structure of GaN nanodots can be characterized by transmission electron microscopy. The growth parameters, such as pre-nitridation treatment on Si surface, substrate temperature, and plasma nitridation time, affect the crystal structure of GaN nanodots. Higher thermal energy could provide the driving force for the phase transformation of GaN nanodots from zinc-blende to wurtzite structures. Metastable zinc-blende GaN nanodots can be synthesized by the surface modification of Si (111 by nitrogen plasma, i.e., the pre-nitridation treatment is done at a lower growth temperature. This is because the pre-nitridation process can provide a nitrogen-terminal surface for the following Ga droplet formation and a nitrogen-rich condition for the formation of GaN nanodots during droplet epitaxy. The pre-nitridation of Si substrates, the formation of a thin SiNx layer, could inhibit the phase transformation of GaN nanodots from zinc-blende to wurtzite phases. The pre-nitridation treatment also affects the dot size, density, and surface roughness of samples.

The growth of axially modulated p–n GaN nanowires by plasma-enhanced chemical vapor deposition

International Nuclear Information System (INIS)

Wu, Tung-Hsien; Hong, Franklin Chau-Nan

2013-01-01

Due to the n-type characteristics of intrinsic gallium nitride, p-type gallium nitride (GaN) is more difficult to synthesize than n-type gallium nitride in forming the p–n junctions for optoelectronic applications. For the growth of the p-type gallium nitride, magnesium is used as the dopant. The Mg-doped GaN nanowires (NWs) have been synthesized on (111)-oriented n + -silicon substrates by plasma-enhanced chemical vapor deposition. The scanning electron microscope images showed that the GaN NWs were bent at high Mg doping levels, and the transmission electron microscope characterization indicated that single-crystalline GaN NWs grew along < 0001 > orientation. As shown by energy dispersive spectroscopy, the Mg doping levels in GaN NWs increased with increasing partial pressure of magnesium nitride, which was employed as the dopant precursor for p-GaN NW growth. Photoluminescence measurements suggested the presence of both p- and n‐type GaN NWs. Furthermore, the GaN NWs with axial p–n junctions were aligned between either two-Ni or two-Al electrodes by applying alternating current voltages. The current–voltage characteristics have confirmed the formation of axial p–n junctions in GaN nanowires. - Highlights: ► Grow axially modulated GaN nanowires by plasma-enhanced chemical vapor deposition ► Control the Mg concentration of GaN nanowires by tuning Mg 3 N 2 temperature ► Align the GaN nanowires by applying alternating current voltages between electrodes

Superconducting structure with layers of niobium nitride and aluminum nitride

International Nuclear Information System (INIS)

Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

1989-01-01

A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs

High performance Schottky diodes based on indium-gallium-zinc-oxide

Energy Technology Data Exchange (ETDEWEB)

Zhang, Jiawei; Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom); Xin, Qian [School of Physics, Shandong University, Jinan 250100 (China)

2016-07-15

Indium-gallium-zinc-oxide (IGZO) Schottky diodes exhibit excellent performance in comparison with conventional devices used in future flexible high frequency electronics. In this work, a high performance Pt IGZO Schottky diode was presented by using a new fabrication process. An argon/oxygen mixture gas was introduced during the deposition of the Pt layer to reduce the oxygen deficiency at the Schottky interface. The diode showed a high barrier height of 0.92 eV and a low ideality factor of 1.36 from the current–voltage characteristics. Even the radius of the active area was 0.1 mm, and the diode showed a cut-off frequency of 6 MHz in the rectifier circuit. Using the diode as a demodulator, a potential application was also demonstrated in this work.

Gallium-67 citrate scan in extrapulmonary tuberculosis

Energy Technology Data Exchange (ETDEWEB)

Lin Wanyu [Taichung Veterans General Hospital (Taiwan). Dept. of Nuclear Medicine; Hsieh Jihfang [Chi-Mei Foundation Hospital, Tainan (Taiwan)

1999-07-01

Aim: Whole-body gallium scan was performed to evaluate the usefulness of gallium scan for detecting extrapulmonary tuberculosis (TB) lesions. Methods: Thirty-seven patients with extrapulmonary TB were included in this study. Four patients were found to have two lesions. Totally, 41 lesions were identified, including 19 TB arthritis, 8 spinal TB, 5 TB meningitis, 3 TB lymphadenopathy, 2 TB pericarditis, 1 TB peritonitis, 1 intestinal TB, 1 skin TB and 1 renal TB. Results: Of the 41 extrapulmonary TB lesions, gallium scan detected 32 lesions with a sensitivity of 78%. All the patients with TB meningitis showed negative gallium scan. When the five cases of TB meningitis were excluded, the detection sensitivity of gallium scan increased to 88.9% (32/36). Conclusion: Our data revealed that gallium scan is a convenient and useful method for evaluating extrapulmonary TB lesions other than TB-meningitis. We suggest that gallium scan be included in the clinical routine for patients with suspected extrapulmonary TB. (orig.) [German] Ziel: Es wurden Ganzkoerper-Gallium-Szintigramme angefertigt, um den Nutzen der Gallium-Szintigraphie zur Erfassung von extrapulmonalen Tuberkuloseherden (TB) zu erfassen. Methoden: 37 Patienten mit extrapulmonaler TB wurden eingeschlossen. 4 Patienten hatten 2 Laesionen. Insgesamt wurden 41 Laesionen identifiziert, hierunter 19 TB-Arthritis, 8 spinale TB, 5 TB-Meningitis, 3 TB-Lymphadenopathie, 2 TB-Perikarditis, 1 TB-Peritonitis, 1 intestinale TB, 1 Haut-TB und eine Nieren-TB. Ergebnisse: Von den 41 extrapulmonalen TB-Herden erfasste die Gallium-Szintigraphie 32 Herde mit einer Sensitivitaet von 78%. Alle Patienten mit TB-Meningitis zeigten einen negativen Gallium-Scan. Wenn die 5 Faelle mit TB-Meningitis ausgeschlossen wurden, stieg die Sensitivititaet der Gallium-Szintigraphie auf 88,9% (32/36). Schlussfolgerung: Die Daten zeigen, dass die Gallium-Szintigraphie eine einfache und nuetzliche Methode zur Erfassung extrapulmonaler TB-Herde ist

Feasibility of flooding the reactor cavity with liquid gallium coolant for IVR-ERVC strategy

International Nuclear Information System (INIS)

Park, Seong Dae; Bang, In Cheol

2013-01-01

Highlights: ► We investigate the feasibility of gallium liquid metal application for IVR-ERVC. ► We consider overall concerns to apply the liquid metal. ► Decay heat can be removed by flooding the reactor cavity with gallium liquid metal. -- Abstract: In this paper, a new approach replacing the ERVC coolant by a liquid metal instead of water is studied to avoid the heat removal limit of CHF during boiling of water. As the flooding material, gallium is used in terms of the melting and boiling points. Gallium has the enough low melting point of ∼29.7 °C to ensure to maintain liquid state within the containment building. A gallium storage tank for the new flooding system of the ERVC is located in higher position than one of the reactor cavity to make a passive system using the gravity for the event of a station blackout (SBO). While the decay heat from the reactor vessel is removed by gallium, the borated water which is coming out from the reactor system plays a role as the ultimate heat sink in this ERVC system. In the system, two configurations of gallium and borated water are devised depending on whether the direct contact between them occurs. In the first configuration, two fluids are separated by the block structure. The decay heat is transported from molten corium to gallium through the vessel wall. Then the heat is ultimately dissipated by boiling of water in the block structure surface facing the borated water. In the second configuration, the cavity is flooded with both borated water and gallium in the same reactor cavity space. As the result, two layers of the fluids are naturally formed by the density difference. Like the first configuration, finally the heat removal is achieved by boiling of water via gallium. The CFD analysis shows that the maximum temperature of gallium is much lower than its boiling point while the natural circulation is stably formed in two types of the configurations without any serious risk of thermal limit

Gallium scintigraphy in AIDS

International Nuclear Information System (INIS)

Van der Wall, Hans; Provan, I.; Murray, C.; Dwyer, M.; Jones, P.D.

1990-01-01

Gallium-67 scanning, indicated either for the elucidation of symptoms or for the assessment of appropriate therapy, was performed in 56 AIDS patients who underwent a total of 77 scans from 1986 to 1988. The age range of the patients was 13-66 years with an average age of 39 years. The majority of patients (95%) were male homosexuals. Gallium scanning has been applied to a wide spectrum of malignancies and to the detection of occult infections. Several mechanisms of uptake have been postulated for the localization of gallium. In general, gallium-67 acts as an analogue of the ferric ion, binding to transferrin soon after intravenous injection. It is believed that it is bound to transferrin receptors on the surface of tumour cells with subsequent intracellular transport. In infection, the association is probably with lactoferrin elaborated by polymorphonuclear cells and siderophores elaborated by bacteria. Gallium-67 is normally distributed to bone and bone marrow, liver, spleen, breast and bowel. In particular, the concentration in the ascending and transverse colon necessitates adequate bowel preparation. Lacrimal, nasopharyngeal and genital activity may also be seen. 11 refs., 2 tabs., 6 figs

Chemical modeling of a high-density inductively-coupled plasma reactor containing silane

NARCIS (Netherlands)

Kovalgin, Alexeij Y.; Boogaard, A.; Brunets, I.; Holleman, J.; Schmitz, Jurriaan

We carried out the modeling of chemical reactions in a silane-containing remote Inductively Coupled Plasma Enhanced Chemical Vapor Deposition (ICPECVD) system, intended for deposition of silicon, silicon oxide, and silicon nitride layers. The required electron densities and Electron Energy

Potential effects of gallium on cladding materials

International Nuclear Information System (INIS)

Wilson, D.F.; Beahm, E.C.; Besmann, T.M.; DeVan, J.H.; DiStefano, J.R.; Gat, U.; Greene, S.R.; Rittenhouse, P.L.; Worley, B.A.

1997-10-01

This paper identifies and examines issues concerning the incorporation of gallium in weapons derived plutonium in light water reactor (LWR) MOX fuels. Particular attention is given to the more likely effects of the gallium on the behavior of the cladding material. The chemistry of weapons grade (WG) MOX, including possible consequences of gallium within plutonium agglomerates, was assessed. Based on the calculated oxidation potentials of MOX fuel, the effect that gallium may have on reactions involving fission products and possible impact on cladding performance were postulated. Gallium transport mechanisms are discussed. With an understanding of oxidation potentials and assumptions of mechanisms for gallium transport, possible effects of gallium on corrosion of cladding were evaluated. Potential and unresolved issues and suggested research and development (R and D) required to provide missing information are presented

Electrical and optoelectronic properties of gallium nitride

International Nuclear Information System (INIS)

Flannery, Lorraine Barbara

2002-01-01

This thesis describes novel research carried out on two related topics, the electrical properties of n and p-type GaN and the use of GaN in the fabrication of UV photodetectors. The electrical properties of GaN were assessed mainly by Hall effect measurements, which play a crucial role in the determination of the concentration of shallow electrically active impurities and defects. Most of the Hall effect measurements were carried out on Si and unintentionally doped GaN layers grown on sapphire substrates using a Varian Modular Gen II MBE machine equipped with an Oxford Applied Research CARS25 RF or HD25 RF nitrogen source to supply the active nitrogen. It was necessary to consider parallel conduction in two channels to interpret the temperature dependent Hall effect characteristics of the highest purity layers. Parallel conduction was found to influence the transport properties of these layers even at room temperature and give rise to an increased compensation ratio. The impurity band was found to be located at 23 ± 7 meV below the conduction band in layers containing impurity densities less than 3.8 x 10 18 cm -3 but was found to broaden with increasing impurity content, reducing the activation energy to 5 ± 3 meV in layers containing impurity densities greater than ∼4.5 x 10 18 cm -3 . Doping studies were conducted on Mg doped GaN layers grown on sapphire substrates using the MBE and MOVPE growth techniques. The effect of the growth parameters on Mg incorporation was determined using SIMS and Hall effect measurements for the MBE samples sets. P-type conductivity was successfully demonstrated in Mg doped layers grown under nitrogen rich conditions with layer thickness greater than 0.9 μm using the CARS25 RF source. The highest hole density, p H and mobility, μ H of 9.6 x 10 17 cm -3 and 5.4 cm 2 V -1 s -1 respectively were recorded in the thickest layer grown (1.56 μm). P-type doping studies were also carried out on Mg doped GaN layers grown on GaAs (111)B

Characteristics of Au/PZT/TiO2/Nitride/Si structure capacitors with ICP nitride treatments

International Nuclear Information System (INIS)

Min, Hyung Seob; Kim, Tae Ho; Jeon, Chang Bae; Lee, Jae Gab; Kim, Ji Young

2002-01-01

In this study, the characteristics of PZT/TiO 2 ferroelectric gate stack capacitors with Inductively Coupled Plasma (ICP) nitridation were investigated for field effect transistor (FET)-type Ferroelectric Random Access Memory (FeRAM) applications. If a high accumulation capacitance is to be had, the ICP nitridation time needs to be optimized. While a short ICP treatment time results in thermal oxide growth due to lack of nitrogen, a long nitridation time causes a nitride layer which is too thick. Au/PZT(200 nm)/TiO 2 (40 nm)/Nitride/Si (MeFINS) structure capacitors show a memory window (ΔV) of 1.6 V under ±3-V operation while Au/PZT(200 nm)/TiO 2 (40 nm)/Si (MeFIS) capacitors without nitride treatment exhibit a small memory window of 0.6 V. At the same time, the capacitance of the MeFINS device is almost twice that of the MeFIS capacitor. This result implies that the ICP nitride treatment suppresses the formation of a low dielectric constant interfacial SiO x layer and alleviates the series capacitance problem

The role of gallium-67 in Hodgkin's disease

International Nuclear Information System (INIS)

Bogart, Jeffrey A.; Chung, T. Chung; Mariados, Neil F.

1996-01-01

Purpose/Objective: Although widely used, the value of gallium imaging in managing Hodgkin's lymphoma remains unclear. Methods: Retrospective review of gallium and treatment data in patients with Hodgkin's disease between January 1990 and July 1995. Results: Eighty-six of 101 patients had Ga-67 imaging. Stage was as follows: 1A-11 patients, 1B - 2, 2A - 27, 2B - 22, 3A - 10, 3B - 5, 4A - 3 and 4B - 6. Sixty-two patients had staging gallium scans and 15% of tumors were not gallium avid. Two patients were upstaged based on gallium scan. Five patients had positive laparotomy and all had negative abdominal gallium exams. Three studies had false positive lesions. Initial therapy was assessed with gallium in 61 patients and 45 had complete response. Tumor recurred in 36% ((10(28))) of patients gallium negative after 3-6 cycles of chemotherapy, with no recurrences in 17 patients gallium negative after radiotherapy or chemo radiation. Six of 7 patients with focal gallium uptake after chemotherapy received radiotherapy and all remain disease free. Seven patients had persistent or progressive gallium-avid tumor after chemotherapy correlating with clinical disease. Two patients had false positive exams after radiotherapy. Twenty-two patients had gallium scans at recurrence. One scan was (false) negative and in two cases, gallium imaging was the initial evidence of recurrent tumor. Conclusion: Ga-67 imaging may help confirm the presence of active Hodgkin's disease, but was unreliable in defining disease remission after chemotherapy in this study population. Prospective studies may help define the role of gallium scans

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

Institute of Scientific and Technical Information of China (English)

Wang Liang-Yong; Liu Bo; Song Zhi-Tang; Liu Wei-Li; Feng Song-Lin; David Huang; S.V Babu

2011-01-01

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre-and the post-polished wafer surfaces as well as the pre-and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed.

Effective Duration of Gas Nitriding Process on AISI 316L for the Formation of a Desired Thickness of Surface Nitrided Layer

Directory of Open Access Journals (Sweden)

Mahmoud Hassan R. S.

2014-07-01

Full Text Available High temperature gas nitriding performed on AISI 316L at the temperature of 1200°C. The microstructure of treated AISI 316L samples were observed to identify the formation of the microstructure of nitrided surface layer. The grain size of austenite tends to be enlarged when the nitriding time increases, but the austenite single phase structure is maintained even after the long-time solution nitriding. Using microhardness testing, the hardness values drop to the center of the samples. The increase in surface hardness is due to the high nitrogen concentration at or near the surface. At 245HV, the graph of the effective duration of nitriding process was plotted to achieve the maximum depth of nitrogen diffuse under the surface. Using Sigma Plot software best fit lines of the experimental result found and plotted to find out effective duration of nitriding equation as Y=1.9491(1-0.7947x, where Y is the thickness of nitrided layer below the surface and X is duration of nitriding process. Based on this equation, the duration of gas nitriding process can be estimated to produce desired thickness of nitrided layer.

Defect reduction in seeded aluminum nitride crystal growth

Science.gov (United States)

Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

2017-09-26

Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Extreme conditions synthesis, processing and characterization of metal-nitrides and alloys of mechanical and optoelectronic importance

International Nuclear Information System (INIS)

Serghiou, G; McGaff, A J; Russell, N; Morniroli, J P; Frost, D J; Odling, N; Boehler, R; Troadec, D; Lathe, C

2010-01-01

High density nitrides and group IV alloys are of growing importance for both ceramic and optoelectronic applications. We present here new data and processes in our ongoing preparation of alkaline earth and transition metal nitrides as well as group IV alloys, here, up to 25 GPa and 2300 K. We employ large volume and laser-heated diamond anvil cell techniques for synthesis, processing tools including focused ion beam, and synchrotron X-ray diffraction, transmission electron microscopy and scanning electron microscopy for characterization.

Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

Directory of Open Access Journals (Sweden)

Ji-Hyeon Park

2014-01-01

Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

Metal Immiscibility Route to Synthesis of Ultrathin Carbides, Borides, and Nitrides.

Science.gov (United States)

Wang, Zixing; Kochat, Vidya; Pandey, Prafull; Kashyap, Sanjay; Chattopadhyay, Soham; Samanta, Atanu; Sarkar, Suman; Manimunda, Praveena; Zhang, Xiang; Asif, Syed; Singh, Abhisek K; Chattopadhyay, Kamanio; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

2017-08-01

Ultrathin ceramic coatings are of high interest as protective coatings from aviation to biomedical applications. Here, a generic approach of making scalable ultrathin transition metal-carbide/boride/nitride using immiscibility of two metals is demonstrated. Ultrathin tantalum carbide, nitride, and boride are grown using chemical vapor deposition by heating a tantalum-copper bilayer with corresponding precursor (C 2 H 2 , B powder, and NH 3 ). The ultrathin crystals are found on the copper surface (opposite of the metal-metal junction). A detailed microscopy analysis followed by density functional theory based calculation demonstrates the migration mechanism, where Ta atoms prefer to stay in clusters in the Cu matrix. These ultrathin materials have good interface attachment with Cu, improving the scratch resistance and oxidation resistance of Cu. This metal-metal immiscibility system can be extended to other metals to synthesize metal carbide, boride, and nitride coatings. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles

Science.gov (United States)

Huang, Yuewang; Zhao, Qiancheng; Sharac, Nicholas; Ragan, Regina; Boyraz, Ozdal

2015-05-01

We demonstrate the fabrication of a highly nonlinear sub-micron silicon nitride trench waveguide coated with gold nanoparticles for plasmonic enhancement. The average enhancement effect is evaluated by measuring the spectral broadening effect caused by self-phase-modulation. The nonlinear refractive index n2 was measured to be 7.0917×10-19 m2/W for a waveguide whose Wopen is 5 μm. Several waveguides at different locations on one wafer were measured in order to take the randomness of the nanoparticle distribution into consideration. The largest enhancement is measured to be as high as 10 times. Fabrication of this waveguide started with a MEMS grade photomask. By using conventional optical lithography, the wide linewidth was transferred to a wafer. Then the wafer was etched anisotropically by potassium hydroxide (KOH) to engrave trapezoidal trenches with an angle of 54.7º. Side wall roughness was mitigated by KOH etching and thermal oxidation that was used to generate a buffer layer for silicon nitride waveguide. The guiding material silicon nitride was then deposited by low pressure chemical vapor deposition. The waveguide was then patterned with a chemical template, with 20 nm gold particles being chemically attached to the functionalized poly(methyl methacrylate) domains. Since the particles attached only to the PMMA domains, they were confined to localized regions, therefore forcing the nanoparticles into clusters of various numbers and geometries. Experiments reveal that the waveguide has negligible nonlinear absorption loss, and its nonlinear refractive index can be greatly enhanced by gold nano clusters. The silicon nitride trench waveguide has large nonlinear refractive index, rendering itself promising for nonlinear applications.

Frequency effects and properties of plasma deposited fluorinated silicon nitride

International Nuclear Information System (INIS)

Chang, C.; Flamm, D.L.; Ibbotson, D.E.; Mucha, J.A.

1988-01-01

The properties of low-hydrogen, fluorinated plasma-enhanced chemical vapor deposition (PECVD) silicon nitride films grown using NF 3 /SiH 4 /N 2 feed mixtures in 200 kHz and 14 MHz discharges were compared. High-energy ion bombardment at 200 kHz is expected to enhance surface diffusion and chemical reconstruction. Compared to fluorinated silicon nitride deposited at 14 MHz under otherwise comparable conditions, the 200 kHz films had a lower Si--H bond concentration (approx. 21 cm -3 ), lower total hydrogen content (5--8 x 10 21 cm -3 ), better resistance to oxidation, lower compressive stress (-0.7 to -1.5 Gdyne/cm), and higher density (3.1 g/cm 3 ). The dielectric constant of better low-frequency Class I films was constant to 500 MHz, while that of high-frequency films fell up to 15% between 100 Hz and 10 MHz. The absorption edges of low-frequency PECVD fluorinated silicon nitride films were between 5.0 and 6.1 eV, which compare with 4.4 to 5.6 eV for the high-excitation frequency fluorinated material and 3 to 4 eV for conventional PECVD nitride. However high-frequency films may have fewer trap centers and a lower dielectric constant. 14 MHz p-SiN:F films grown with NH 3 as an auxiliary nitrogen source showed absorption edges similar to low-frequency material grown from NF 3 /SiH 4 /N 2 , but they have substantially more N--H bonding. The dielectric constant and absorption edge of these films were comparable to those of low-frequency p-SiN:F from NF 3 /SiH 4 /N 2

Enhanced energy density and thermal conductivity in poly(fluorovinylidene-co-hexafluoropropylene) nanocomposites incorporated with boron nitride nanosheets exfoliated under assistance of hyperbranched polyethylene

Science.gov (United States)

Ye, Huijian; Lu, Tiemei; Xu, Chunfeng; Zhong, Mingqiang; Xu, Lixin

2018-03-01

Polymer dielectric film with a large dielectric constant, high energy density and enhanced thermal conductivity are of significance for the development of impulse capacitors. However, the fabrication of polymer dielectrics combining high energy density and thermal conductivity is still a challenge at the moment. Here we demonstrate the facile exfoliation of hexagonal boron nitride nanosheets (BNNSs) in common organic solvents under sonication with the assistance of hyperbranched polyethylene (HBPE). The noncovalent CH-π interactions between the nanosheets and HBPE ensure the dispersion of BNNSs in organic solvents with high concentrations, because of the highly branched chain structure of HBPE. Subsequently, the resultant BNNSs with a few defects are distributed uniformly in the poly(fluorovinylidene-co-hexafluoropropylene) (P(VDF-HFP)) nanocomposite films prepared via simple solution casting. The BNNS/P(VDF-HFP) nanocomposite exhibits outstanding dielectric properties, high energy density and high thermal conductivity. The dielectric constant of the 0.5 wt% nanocomposite film is 35.5 at 100 Hz with an energy density of 5.6 J cm-3 at 325 MV m-1 and a high charge-discharge efficiency of 79% due to the depression of the charge injection and chemical species ionization in a high field. Moreover, a thermal conductivity of 1.0 wt% nanocomposite film reaches 0.91 W·m-1 · K-1, which is 3.13 times higher than that of the fluoropolymer matrix. With dipole accumulation and orientation in the interfacial zone, lightweight, flexible BNNS/P(VDF-HFP) nanocomposite films with high charge-discharge performance and thermal conductivity, exhibit promising applications in relatively high-temperature electronics and energy storage devices.

Lattice Dynamics of Gallium Phosphide

International Nuclear Information System (INIS)

Yarnell, J.L.; Warren, J.L.; Wenzel, R.G.; Dean, P.J.

1968-01-01

Dispersion curves for phonons propagating in the [100], [110], and [111] directions in gallium phosphide have been measured using a triple-axis neutron diffraction spectrometer operating in the constant-Q mode. The sample was a pseudo-single crystal which was prepared by gluing together 36 single crystal plates of gallium phosphide 1 to 2.5 cm in diameter and ∼0.07 cm thick. The plates were grown epitaxially on substrates of gallium arsenide or gallium phosphide, and aligned individually by neutron diffraction. Rocking curves for eight reflections symmetrically distributed in the plane of the experiment had full widths at half maximum in the range 0.52° - 0.58° and were approximately Gaussian in shape. Gallium phosphide crystallizes in the zinc blende structure. A group theoretic analysis of the lattice dynamics of this structure and a shell model fit to the measured dispersion curves are presented. Various optical properties of gallium phosphide are discussed in terms of the phonon dispersion curves. In particular, the phonons which assist indirect electronic transitions are identified as those at the zone boundary in the [100] direction (symmetry point X) in agreement with theoretical and experimental indications that the extrema of the conduction and valence bands are at X and Γ (center of the zone), respectively. The LO branches lie above the TO branches throughout the Brillouin zone in contradiction to the predictions of Keyes and Mitra. The shell model fit indicates that the charge on the gallium atom is negative. (author)

Origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid

International Nuclear Information System (INIS)

Wang Liang-Yong; Liu Bo; Song Zhi-Tang; Liu Wei-Li; Feng Song-Lin; David Huang; Babu, S.V

2011-01-01

We report on the investigation of the origin of high oxide to nitride polishing selectivity of ceria-based slurry in the presence of picolinic acid. The oxide to nitride removal selectivity of the ceria slurry with picolinic acid is as high as 76.6 in the chemical mechanical polishing. By using zeta potential analyzer, particle size analyzer, horizon profilometer, thermogravimetric analysis and Fourier transform infrared spectroscopy, the pre- and the post-polished wafer surfaces as well as the pre- and the post-used ceria-based slurries are compared. Possible mechanism of high oxide to nitride selectivity with using ceria-based slurry with picolinic acid is discussed. (interdisciplinary physics and related areas of science and technology)

Gallium-67 citrate scan in extrapulmonary tuberculosis

International Nuclear Information System (INIS)

Lin Wanyu

1999-01-01

Aim: Whole-body gallium scan was performed to evaluate the usefulness of gallium scan for detecting extrapulmonary tuberculosis (TB) lesions. Methods: Thirty-seven patients with extrapulmonary TB were included in this study. Four patients were found to have two lesions. Totally, 41 lesions were identified, including 19 TB arthritis, 8 spinal TB, 5 TB meningitis, 3 TB lymphadenopathy, 2 TB pericarditis, 1 TB peritonitis, 1 intestinal TB, 1 skin TB and 1 renal TB. Results: Of the 41 extrapulmonary TB lesions, gallium scan detected 32 lesions with a sensitivity of 78%. All the patients with TB meningitis showed negative gallium scan. When the five cases of TB meningitis were excluded, the detection sensitivity of gallium scan increased to 88.9% (32/36). Conclusion: Our data revealed that gallium scan is a convenient and useful method for evaluating extrapulmonary TB lesions other than TB-meningitis. We suggest that gallium scan be included in the clinical routine for patients with suspected extrapulmonary TB. (orig.) [de

Electrochemical Solution Growth of Magnetic Nitrides

Energy Technology Data Exchange (ETDEWEB)

Monson, Todd C. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Pearce, Charles [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

2014-10-01

Magnetic nitrides, if manufactured in bulk form, would provide designers of transformers and inductors with a new class of better performing and affordable soft magnetic materials. According to experimental results from thin films and/or theoretical calculations, magnetic nitrides would have magnetic moments well in excess of current state of the art soft magnets. Furthermore, magnetic nitrides would have higher resistivities than current transformer core materials and therefore not require the use of laminates of inactive material to limit eddy current losses. However, almost all of the magnetic nitrides have been elusive except in difficult to reproduce thin films or as inclusions in another material. Now, through its ability to reduce atmospheric nitrogen, the electrochemical solution growth (ESG) technique can bring highly sought after (and previously inaccessible) new magnetic nitrides into existence in bulk form. This method utilizes a molten salt as a solvent to solubilize metal cations and nitrogen ions produced electrochemically and form nitrogen compounds. Unlike other growth methods, the scalable ESG process can sustain high growth rates (~mm/hr) even under reasonable operating conditions (atmospheric pressure and 500 °C). Ultimately, this translates into a high throughput, low cost, manufacturing process. The ESG process has already been used successfully to grow high quality GaN. Below, the experimental results of an exploratory express LDRD project to access the viability of the ESG technique to grow magnetic nitrides will be presented.

Liquid gallium cooling of silicon crystals in high intensity photon beams

International Nuclear Information System (INIS)

Smither, R.K.; Forster, G.A.; Bilderback, D.H.; Bedzyk, M.; Finkelstein, K.; Henderson, C.; White, J.; Berman, L.E.; Stefan, P.; Oversluizen, T.

1989-01-01

The high-brilliance, insertion-device-based photon beams of the next generation of synchrotron sources (Argonne's APS and Grenoble's ESRF) will deliver large thermal loads (1--10 kW) to the first optical elements. Considering the problems that present synchrotron users are experiencing with beams from recently installed insertion devices, new and improved methods of cooling these first optical elements, particularly when they are diffraction crystals, are clearly needed. A series of finite element calculations were performed to test the efficiency of new cooling geometries and various cooling fluids. The best results were obtained with liquid Ga metal flowing in channels just below the surface of the crystal. Ga was selected because of its good thermal conductivity and thermal capacity, low melting point, high boiling point, low kinetic viscosity, and very low vapor pressure. Its very low vapor pressure, even at elevated temperatures, makes it especially attractive in UHV conditions. A series of experiments were conducted at CHESS in February of 1988 that compared liquid gallium-cooled silicon diffraction crystals with water-cooled crystals. A six-pole wiggler beam was used to perform these tests on three different Si crystals, two with new cooling geometries and the one presently in use. A special high-pressure electromagnetic induction pump, recently developed at Argonne, was used to circulate the liquid gallium through the silicon crystals. In all experiments, the specially cooled crystal was used as the first crystal in a two crystal monochromator. An infrared camera was used to monitor the thermal profiles and correlated them with rocking curve measurements. A second set of cooling experiments were conducted in June of 1988 that used the intense, highly collimated beam from the newly installed ANL/CHESS undulator

Outphasing control of gallium nitride based very high frequency resonant converters

DEFF Research Database (Denmark)

Madsen, Mickey Pierre; Knott, Arnold; Andersen, Michael A. E.

2015-01-01

In this paper an outphasing modulation control method suitable for line regulation of very high frequency resonant converters is described. The pros and cons of several control methods suitable for very high frequency resonant converters are described and compared to outphasing modulation...

Kinase detection with gallium nitride based high electron mobility transistors.

Science.gov (United States)

Makowski, Matthew S; Bryan, Isaac; Sitar, Zlatko; Arellano, Consuelo; Xie, Jinqiao; Collazo, Ramon; Ivanisevic, Albena

2013-07-01

A label-free kinase detection system was fabricated by the adsorption of gold nanoparticles functionalized with kinase inhibitor onto AlGaN/GaN high electron mobility transistors (HEMTs). The HEMTs were operated near threshold voltage due to the greatest sensitivity in this operational region. The Au NP/HEMT biosensor system electrically detected 1 pM SRC kinase in ionic solutions. These results are pertinent to drug development applications associated with kinase sensing.

Toxicity of indium arsenide, gallium arsenide, and aluminium gallium arsenide

International Nuclear Information System (INIS)

Tanaka, Akiyo

2004-01-01

Gallium arsenide (GaAs), indium arsenide (InAs), and aluminium gallium arsenide (AlGaAs) are semiconductor applications. Although the increased use of these materials has raised concerns about occupational exposure to them, there is little information regarding the adverse health effects to workers arising from exposure to these particles. However, available data indicate these semiconductor materials can be toxic in animals. Although acute and chronic toxicity of the lung, reproductive organs, and kidney are associated with exposure to these semiconductor materials, in particular, chronic toxicity should pay much attention owing to low solubility of these materials. Between InAs, GaAs, and AlGaAs, InAs was the most toxic material to the lung followed by GaAs and AlGaAs when given intratracheally. This was probably due to difference in the toxicity of the counter-element of arsenic in semiconductor materials, such as indium, gallium, or aluminium, and not arsenic itself. It appeared that indium, gallium, or aluminium was toxic when released from the particles, though the physical character of the particles also contributes to toxic effect. Although there is no evidence of the carcinogenicity of InAs or AlGaAs, GaAs and InP, which are semiconductor materials, showed the clear evidence of carcinogenic potential. It is necessary to pay much greater attention to the human exposure of semiconductor materials

Superplastic forging nitride ceramics

Science.gov (United States)

Panda, P.C.; Seydel, E.R.; Raj, R.

1988-03-22

A process is disclosed for preparing silicon nitride ceramic parts which are relatively flaw free and which need little or no machining, said process comprising the steps of: (a) preparing a starting powder by wet or dry mixing ingredients comprising by weight from about 70% to about 99% silicon nitride, from about 1% to about 30% of liquid phase forming additive and from 1% to about 7% free silicon; (b) cold pressing to obtain a preform of green density ranging from about 30% to about 75% of theoretical density; (c) sintering at atmospheric pressure in a nitrogen atmosphere at a temperature ranging from about 1,400 C to about 2,200 C to obtain a density which ranges from about 50% to about 100% of theoretical density and which is higher than said preform green density, and (d) press forging workpiece resulting from step (c) by isothermally uniaxially pressing said workpiece in an open die without initial contact between said workpiece and die wall perpendicular to the direction of pressing and so that pressed workpiece does not contact die wall perpendicular to the direction of pressing, to substantially final shape in a nitrogen atmosphere utilizing a temperature within the range of from about 1,400 C to essentially 1,750 C and strain rate within the range of about 10[sup [minus]7] to about 10[sup [minus]1] seconds[sup [minus]1], the temperature and strain rate being such that surface cracks do not occur, said pressing being carried out to obtain a shear deformation greater than 30% whereby superplastic forging is effected.

A Combination of Boron Nitride Nanotubes and Cellulose Nanofibers for the Preparation of a Nanocomposite with High Thermal Conductivity.

Science.gov (United States)

Zeng, Xiaoliang; Sun, Jiajia; Yao, Yimin; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2017-05-23

With the current development of modern electronics toward miniaturization, high-degree integration and multifunctionalization, considerable heat is accumulated, which results in the thermal failure or even explosion of modern electronics. The thermal conductivity of materials has thus attracted much attention in modern electronics. Although polymer composites with enhanced thermal conductivity are expected to address this issue, achieving higher thermal conductivity (above 10 W m -1 K -1 ) at filler loadings below 50.0 wt % remains challenging. Here, we report a nanocomposite consisting of boron nitride nanotubes and cellulose nanofibers that exhibits high thermal conductivity (21.39 W m -1 K -1 ) at 25.0 wt % boron nitride nanotubes. Such high thermal conductivity is attributed to the high intrinsic thermal conductivity of boron nitride nanotubes and cellulose nanofibers, the one-dimensional structure of boron nitride nanotubes, and the reduced interfacial thermal resistance due to the strong interaction between the boron nitride nanotubes and cellulose nanofibers. Using the as-prepared nanocomposite as a flexible printed circuit board, we demonstrate its potential usefulness in electronic device-cooling applications. This thermally conductive nanocomposite has promising applications in thermal interface materials, printed circuit boards or organic substrates in electronics and could supplement conventional polymer-based materials.

Unveiling the Structural Origin of the High Carrier Mobility of a Molecular Monolayer on Boron Nitride

OpenAIRE

Xu, Rui; He, Daowei; Zhang, Yuhan; Wu, Bing; Liu, Fengyuan; Meng, Lan; Liu, Jun-Fang; Wu, Qisheng; Shi, Yi; Wang, Jinlan; Nie, Jia-Cai; Wang, Xinran; He, Lin

2014-01-01

Very recently, it was demonstrated that the carrier mobility of a molecular monolayer dioctylbenzothienobenzothiophene (C8-BTBT) on boron nitride can reach 10 cm2/Vs, the highest among the previously reported monolayer molecular field-effect transistors. Here we show that the high-quality single crystal of the C8-BTBT monolayer may be the key origin of the record-high carrier mobility. We discover that the C8-BTBT molecules prefer layer-by-layer growth on both hexagonal boron nitride and grap...

Charge Modulation in Graphitic Carbon Nitride as a Switchable Approach to High-Capacity Hydrogen Storage.

Science.gov (United States)

Tan, Xin; Kou, Liangzhi; Tahini, Hassan A; Smith, Sean C

2015-11-01

Electrical charging of graphitic carbon nitride nanosheets (g-C4 N3 and g-C3 N4 ) is proposed as a strategy for high-capacity and electrocatalytically switchable hydrogen storage. Using first-principle calculations, we found that the adsorption energy of H2 molecules on graphitic carbon nitride nanosheets is dramatically enhanced by injecting extra electrons into the adsorbent. At full hydrogen coverage, the negatively charged graphitic carbon nitride achieves storage capacities up to 6-7 wt %. In contrast to other hydrogen storage approaches, the storage/release occurs spontaneously once extra electrons are introduced or removed, and these processes can be simply controlled by switching on/off the charging voltage. Therefore, this approach promises both facile reversibility and tunable kinetics without the need of specific catalysts. Importantly, g-C4 N3 has good electrical conductivity and high electron mobility, which can be a very good candidate for electron injection/release. These predictions may prove to be instrumental in searching for a new class of high-capacity hydrogen storage materials. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

RF plasma nitriding of severely deformed iron-based alloys

International Nuclear Information System (INIS)

Ferkel, H.; Glatzer, M.; Estrin, Y.; Valiev, R.Z.; Blawert, C.; Mordike, B.L.

2003-01-01

The effect of severe plastic deformation by cold high pressure torsion (HPT) on radio frequency (RF) plasma nitriding of pure iron, as well as St2K50 and X5CrNi1810 steels was investigated. Nitriding was carried out for 3 h in a nitrogen atmosphere at a pressure of 10 -5 bar and temperatures of 350 and 400 deg. C. Nitrided specimens were analysed by scanning electron microscopy (SEM), X-ray diffraction and micro hardness measurements. It was found that HPT enhances the effect of nitriding leading almost to doubling of the thickness of the nitrided layer for pure iron and the high alloyed steel. The largest increase in hardness was observed when HPT was combined with RF plasma nitriding at 350 deg. C. In the case of pure iron, the X-ray diffraction spectra showed the formation of ε and γ' nitrides in the compound layer, with a preferential formation of γ' at the expense of the α-phase at the higher nitriding temperature. The corresponding surface hardness was up to 950 HV0.01. While the HPT-processed St2K50 exhibits both nitride phases after nitriding at 350 deg. C, only the γ'-phase was observed after nitriding at 400 deg. C. A surface hardness of up to 1050 HV0.01 was measured for this steel. The high alloyed steel X5CrNi1810 exhibited the highest increase in surface hardness when HPT was combined with nitriding at 350 deg. C. The surface hardness of this steel was greater than 1400 HV0.025. The XRD analyses indicate the formation of the expanded austenite (S-phase) in the surface layer as a result of RF plasma nitriding. Furthermore, after HPT X5CrNi1810 was transformed completely into deformation martensite which did not transform back to austenite under thermochemical treatment. However, in the case of nitriding of the HPT-processed high alloyed steel at 400 deg. C, the formation of the S-phase was less pronounced. In view of the observed XRD peak broadening, the formation of nitrides, such as e.g. CrN, cannot be ruled out

Semipolar III-nitride laser diodes with zinc oxide cladding.

Science.gov (United States)

Myzaferi, Anisa; Reading, Arthur H; Farrell, Robert M; Cohen, Daniel A; Nakamura, Shuji; DenBaars, Steven P

2017-07-24

Incorporating transparent conducting oxide (TCO) top cladding layers into III-nitride laser diodes (LDs) improves device design by reducing the growth time and temperature of the p-type layers. We investigate using ZnO instead of ITO as the top cladding TCO of a semipolar (202¯1) III-nitride LD. Numerical modeling indicates that replacing ITO with ZnO reduces the internal loss in a TCO clad LD due to the lower optical absorption in ZnO. Lasing was achieved at 453 nm with a threshold current density of 8.6 kA/cm 2 and a threshold voltage of 10.3 V in a semipolar (202¯1) III-nitride LD with ZnO top cladding.

X-parameter Based GaN Device Modeling and its Application to a High-efficiency PA Design

DEFF Research Database (Denmark)

Wang, Yelin; Nielsen, Troels Studsgaard; Jensen, Ole Kiel

2014-01-01

X-parameters are supersets of S-parameters and applicable to both linear and nonlinear system modeling. In this paper, a packaged 6 W Gallium Nitride (GaN) RF power transistor is modeled using load-dependent X-parameters by simulations. During the device characterization the load impedance is tuned...... to decrease the complexity of a harmonic load-pull measurement setup. A high-efficiency 2 GHz power amplifier is also designed for further validation of the concept....

Formation of porous surface layers in reaction bonded silicon nitride during processing

Science.gov (United States)

Shaw, N. J.; Glasgow, T. K.

1979-01-01

Microstructural examination of reaction bonded silicon nitride (RBSN) has shown that there is often a region adjacent to the as-nitrided surfaces that is even more porous than the interior of this already quite porous material. Because this layer of large porosity is considered detrimental to both the strength and oxidation resistance of RBSN, a study was undertaken to determine if its formation could be prevented during processing. All test bars studied were made from a single batch of Si powder which was milled for 4 hours in heptane in a vibratory mill using high density alumina cylinders as the grinding media. After air drying the powder, bars were compacted in a single acting die and hydropressed.

Fluorescent lighting with aluminum nitride phosphors

Science.gov (United States)

Cherepy, Nerine J.; Payne, Stephen A.; Seeley, Zachary M.; Srivastava, Alok M.

2016-05-10

A fluorescent lamp includes a glass envelope; at least two electrodes connected to the glass envelope; mercury vapor and an inert gas within the glass envelope; and a phosphor within the glass envelope, wherein the phosphor blend includes aluminum nitride. The phosphor may be a wurtzite (hexagonal) crystalline structure Al.sub.(1-x)M.sub.xN phosphor, where M may be drawn from beryllium, magnesium, calcium, strontium, barium, zinc, scandium, yttrium, lanthanum, cerium, praseodymium, europium, gadolinium, terbium, ytterbium, bismuth, manganese, silicon, germanium, tin, boron, or gallium is synthesized to include dopants to control its luminescence under ultraviolet excitation. The disclosed Al.sub.(1-x)M.sub.xN:Mn phosphor provides bright orange-red emission, comparable in efficiency and spectrum to that of the standard orange-red phosphor used in fluorescent lighting, Y.sub.2O.sub.3:Eu. Furthermore, it offers excellent lumen maintenance in a fluorescent lamp, and does not utilize "critical rare earths," minimizing sensitivity to fluctuating market prices for the rare earth elements.

Nitrides and carbides of molybdenum and tungsten with high specific-surface area: their synthesis, structure, and catalytic properties

International Nuclear Information System (INIS)

Volpe, L.

1985-01-01

Temperature-programmed reactions between trioxides of molybdenum or tungsten and ammonia provide a new method to synthesize dimolybdenum and ditungsten nitrides with specific surface areas to two-hundred-and-twenty and ninety-one square meters per gram, respectively. These are the highest values on record for any unsupported metallic powders. They correspond to three-four nonometer particles. The reaction of molybdenum trioxide with ammonia is topotactic in the sense that one-zero-zero planes of dimolybdenum nitride are parallel to zero-one-zero planes of molybdenum trioxide. As the trioxide transforms, it passes through an oxynitride intermediate with changing bulk structure and increasing surface area and extent of reduction. The nitride product consists of platelets, pseudomorphous with the original trioxide, which can be regarded as highly porous defect single crystals. By treating small particles of dimolybdenum or ditungsten nitride with methane-dihydrogen mixtures it is possible to replace interstitial nitrogen atoms by carbon atoms, without sintering, and thus to prepare carbides of molybdenum and tungsten with very high specific surface areas. Molybdenum nitride powders catalyze ammonia synthesis. A pronounced increase in the catalytic activity with increasing particle size confirms the structure-sensitive character of this reaction

Space-confined preparation of high surface area tungsten oxide and tungsten nitride inside the pores of mesoporous silica SBA-15

DEFF Research Database (Denmark)

Meyer, Simon; Beyer, Hans; Köhler, Klaus

2015-01-01

For the direct preparation of high surface area nitride materials, a lack of suitable precursors exists. Indirect preparation by gas phase nitridation (e.g. by ammonia) requires high temperatures and often results in sintering. The present work demonstrates that the space-confined preparation of ...

Electron transport in polycyclic aromatic hydrocarbons/boron nitride hybrid structures: density functional theory combined with the nonequilibrium Green's function.

Science.gov (United States)

Panahi, S F K S; Namiranian, Afshin; Soleimani, Maryam; Jamaati, Maryam

2018-02-07

We investigate the electronic transport properties of two types of junction based on single polyaromatic hydrocarbons (PAHs) and PAHs embedded in boron nitride (h-BN) nanoribbons, using nonequilibrium Green's functions (NEGF) and density functional theory (DFT). In the PAH junctions, a Fano resonance line shape at the Fermi energy in the transport feature can be clearly seen. In hybrid junctions, structural asymmetries enable interactions between the electronic states, leading to observation of interface-based transport. Our findings reveal that the interface of PAH/h-BN strongly affects the transport properties of the structures.

Optimal III-nitride HEMTs: from materials and device design to compact model of the 2DEG charge density

Science.gov (United States)

Li, Kexin; Rakheja, Shaloo

2017-02-01

In this paper, we develop a physically motivated compact model of the charge-voltage (Q-V) characteristics in various III-nitride high-electron mobility transistors (HEMTs) operating under highly non-equilibrium transport conditions, i.e. high drain-source current. By solving the coupled Schrödinger-Poisson equation and incorporating the two-dimensional electrostatics in the channel, we obtain the charge at the top-of-the-barrier for various applied terminal voltages. The Q-V model accounts for cutting off of the negative momenta states from the drain terminal under high drain-source bias and when the transmission in the channel is quasi-ballistic. We specifically focus on AlGaN and AlInN as barrier materials and InGaN and GaN as the channel material in the heterostructure. The Q-V model is verified and calibrated against numerical results using the commercial TCAD simulator Sentaurus from Synopsys for a 20-nm channel length III-nitride HEMT. With 10 fitting parameters, most of which have a physical origin and can easily be obtained from numerical or experimental calibration, the compact Q-V model allows us to study the limits and opportunities of III-nitride technology. We also identify optimal material and geometrical parameters of the device that maximize the carrier concentration in the HEMT channel in order to achieve superior RF performance. Additionally, the compact charge model can be easily integrated in a hierarchical circuit simulator, such as Keysight ADS and CADENCE, to facilitate circuit design and optimization of various technology parameters.

Superconductivity and structure of gallium under nanoconfinement

Energy Technology Data Exchange (ETDEWEB)

Charnaya, E V; Tien, Cheng; Lee, Min Kai [Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan (China); Kumzerov, Yu A [A F Ioffe Physico-Technical Institute RAS, St Petersburg, 194021 (Russian Federation)

2009-11-11

Superconductivity and crystalline structure were studied for two nanocomposites consisting of gallium loaded porous glasses with different pore sizes. The superconducting transition temperatures were found to differ from those in known bulk gallium modifications. The transition temperatures 7.1 and 6.7 K were ascribed to two new confined gallium structures, iota- and kappa-Ga, observed by synchrotron radiation x-ray powder diffraction. The evolution of superconductivity on decreasing the pore filling with gallium was also studied.

The role of titanium aluminide in n-gallium nitride ohmic contact technology

Science.gov (United States)

Pelto, Christopher M.

Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

Defect complexes in carbon and boron nitride nanotubes

CSIR Research Space (South Africa)

Mashapa, MG

2012-05-01

Full Text Available The effect of defect complexes on the stability, structural and electronic properties of single-walled carbon nanotubes and boron nitride nanotubes is investigated using the ab initio pseudopotential density functional method implemented...

Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

Energy Technology Data Exchange (ETDEWEB)

Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

2017-05-12

The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.

2016-03-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

Comparison of nonpolar III-nitride vertical-cavity surface-emitting lasers with tunnel junction and ITO intracavity contacts

KAUST Repository

Leonard, J. T.; Young, E. C.; Yonkee, B. P.; Cohen, D. A.; Shen, Chao; Margalith, T.; Ng, Tien Khee; Denbaars, S. P.; Ooi, Boon S.; Speck, J. S.; Nakamura, S.

2016-01-01

We report on the lasing of III-nitride nonpolar, violet, vertical-cavity surface-emitting lasers (VCSELs) with III-nitride tunnel-junction (TJ) intracavity contacts and ion implanted apertures (IIAs). The TJ VCSELs are compared to similar VCSELs with tin-doped indium oxide (ITO) intracavity contacts. Prior to analyzing device results, we consider the relative advantages of III-nitride TJs for blue and green emitting VCSELs. The TJs are shown to be most advantageous for violet and UV VCSELs, operating near or above the absorption edge for ITO, as they significantly reduce the total internal loss in the cavity. However, for longer wavelength III-nitride VCSELs, TJs primarily offer the advantage of improved cavity design flexibility, allowing one to make the p-side thicker using a thick n-type III-nitride TJ intracavity contact. This offers improved lateral current spreading and lower loss, compare to using ITO and p-GaN, respectively. These aspects are particularly important for achieving high-power CW VCSELs, making TJs the ideal intracavity contact for any III-nitride VCSEL. A brief overview of III-nitride TJ growth methods is also given, highlighting the molecular-beam epitaxy (MBE) technique used here. Following this overview, we compare 12 mu m aperture diameter, violet emitting, TJ and ITO VCSEL experimental results, which demonstrate the significant improvement in differential efficiency and peak power resulting from the reduced loss in the TJ design. Specifically, the TJ VCSEL shows a peak power of similar to 550 mu W with a threshold current density of similar to 3.5 kA/cm(2), while the ITO VCSELs show peak powers of similar to 80 mu W and threshold current densities of similar to 7 kA/cm

67Gallium lung scans in progressive systemic sclerosis

International Nuclear Information System (INIS)

Baron, M.; Feiglin, D.; Hyland, R.; Urowitz, M.B.; Shiff, B.

1983-01-01

67 Gallium lung scans were performed in 19 patients with progressive systemic sclerosis (scleroderma). Results were expressed quantitatively as the 67 Gallium Uptake Index. The mean total pulmonary 67 Gallium Uptake Index in patients was significantly higher than that in controls (41 versus 25), and 4 patients (21%) fell outside the normal range. There were no clinical or laboratory variables that correlated with the 56 Gallium uptake. Increased pulmonary 67 Gallium uptake in scleroderma may prove useful as an index of pulmonary disease activity

Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

International Nuclear Information System (INIS)

Nistor, L C; Nistor, S V; Dinca, G; Georgeoni, P; Landuyt, J van; Manfredotti, C; Vittone, E

2002-01-01

High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp 3 bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m -2 is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond

Plasma assisted nitriding for micro-texturing onto martensitic stainless steels*

Directory of Open Access Journals (Sweden)

Katoh Takahisa

2015-01-01

Full Text Available Micro-texturing method has grown up to be one of the most promising procedures to form micro-lines, micro-dots and micro-grooves onto the mold-die materials and to duplicate these micro-patterns onto metallic or polymer sheets via stamping or injection molding. This related application requires for large-area, fine micro-texturing onto the martensitic stainless steel mold-die materials. A new method other than laser-machining, micro-milling or micro-EDM is awaited for further advancement of this micro-texturing. In the present paper, a new micro-texturing method is developed on the basis of the plasma assisted nitriding to transform the two-dimensionally designed micro-patterns to the three dimensional micro-textures in the martensitic stainless steels. First, original patterns are printed onto the surface of stainless steel molds by using the dispenser or the ink-jet printer. Then, the masked mold is subjected to high density plasma nitriding; the un-masked surfaces are nitrided to have higher hardness, 1400 Hv than the matrix hardness, 200 Hv of stainless steels. This nitrided mold is further treated by sand-blasting to selectively remove the soft, masked surfaces. Finally, the micro-patterned martensitic stainless steel mold is fabricated as a tool to duplicate these micro-patterns onto the plastic materials by the injection molding.

A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

Energy Technology Data Exchange (ETDEWEB)

Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

2015-08-03

We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator

International Nuclear Information System (INIS)

Balachander, K.; Arulkumaran, S.; Egawa, T.; Sano, Y.; Baskar, K.

2005-01-01

AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOSHEMTs) were fabricated with plasma enhanced chemical vapor deposited silicon oxy-nitride (SiON) as an insulating layer. The compositions of SiON thin films were confirmed using X-ray photoelectron spectroscopy. The fabricated MOSHEMTs exhibited a very high saturation current density of 1.1 A/mm coupled with high positive operational gate voltage up to +7 V. The MOSHEMTs also exhibited four orders of low gate leakage current and high forward-on voltage when compared with the conventional HEMTs. The drain current collapse using gate pulse measurements showed only a negligible difference in the saturation current density revealing the drastic improvement in passivation of the surface states due to the high quality of dielectric thin films deposited. Thus, based on the improved direct-current operation, SiON can be considered to be a potential gate oxide comparable with other dielectric insulators

Precipitation of metal nitrides from chloride melts

International Nuclear Information System (INIS)

Slater, S.A.; Miller, W.E.; Willit, J.L.

1996-01-01

Precipitation of actinides, lanthanides, and fission products as nitrides from molten chloride melts is being investigated for use as a final cleanup step in treating radioactive salt wastes generated by electrometallurgical processing of spent nuclear fuel. The radioactive components (eg, fission products) need to be removed to reduce the volume of high-level waste that requires disposal. To extract the fission products from the salt, a nitride precipitation process is being developed. The salt waste is first contacted with a molten metal; after equilibrium is reached, a nitride is added to the metal phase. The insoluble nitrides can be recovered and converted to a borosilicate glass after air oxidation. For a bench-scale experimental setup, a crucible was designed to contact the salt and metal phases. Solubility tests were performed with candidate nitrides and metal nitrides for which there are no solubility data. Experiments were performed to assess feasibility of precipitation of metal nitrides from chloride melts

Investigation of Emerging Materials for Optoelectronic Devices Based on III-Nitrides

KAUST Repository

Muhammed, Mufasila Mumthaz

2018-03-11

III-nitride direct bandgap semiconductors have attracted significant research interest due to their outstanding potential for modern optoelectronic and electronic applications. However, the high cost of III-nitride devices, along with low performance due to dislocation defects, remains an obstacle to their further improvement. In this dissertation, I present a significant enhancement of III-nitride devices based on emerging materials. A promising substrate, (-201)-oriented β-Ga2O3 with unique properties that combine high transparency and conductivity, is used for the first time in the development of high-quality vertical III-nitride devices, which can be cost-effective for large-scale production. In addition, hybridizing GaN with emerging materials, mainly perovskite, is shown to extend the functionality of III-nitride applications. As a part of this investigation, high-performance and high-responsivity fast perovskite/GaN-based UV-visible broadband photodetectors were developed. State-of-the-art GaN epilayers grown on (-201)-oriented β-Ga2O3 using AlN and GaN buffer layers are discussed, and their high optical quality without using growth enhancement techniques is demonstrated. In particular, a low lattice mismatch (⁓4.7%) between GaN and the substrate results in a low density of dislocations ~4.8Å~107 cm−2. To demonstrates the effect of (-201)-oriented β-Ga2O3 substrate on the quality of III-nitride alloys, high-quality ternary alloy InxGa1−xN film is studied, followed by the growth of high quality InxGa1−xN/GaN single and multiple quantum wells (QWs). The optical characterization and carrier dynamics by photoluminescence (PL) and time-resolved PL measurements were subsequently performed. Lastly, to investigate the performance of a vertical emitting device based on InGaN/GaN multiple QWs grown on (-201)-oriented β-Ga2O3 substrate, high-efficiency vertical-injection emitting device is developed and extensively investigated. The conductive nature of

The Influence of Hot-Rolled Temperature on Plasma Nitriding Behavior of Iron-Based Alloys

Science.gov (United States)

El-Hossary, F. M.; Khalil, S. M.; Lotfy, Kh.; Kassem, M. A.

2009-07-01

Experiments were performed with an aim of studying the effect of hot-rolled temperature (600 and 900°C) on radio frequency (rf) plasma nitriding of Fe93Ni4Zr3 alloy. Nitriding was carried out for 10 min in a nitrogen atmosphere at a base pressure of 10-2 mbarr. Different continuous plasma processing powers of 300-550 W in steps 50 W or less were applied. Nitrided hot-rolled specimens were characterized by optical microscopy (OM), X-ray diffraction (XRD) and microhardness measurements. The results reveal that the surface of hot-rolled rf plasma nitrided specimens at 600°C is characterized with a fine microstructure as a result of the high nitrogen solubility and diffusivity. Moreover, the hot-rolled treated samples at 600°C exhibit higher microhardness value than the associated values of hot-rolled treated samples at 900°C. The enhancement of microhardness is due to precipitation and predominance of new phases ( γ and ɛ phases). Mainly, this conclusion has been attributed to the high defect densities and small grain sizes of the samples hot-rolled at 600°C. Generally, the refinement of grain size plays a dramatic role in improvement of mechanical properties of tested samples.

Gallium-67 scintigraphy and the Heart

International Nuclear Information System (INIS)

Garayt, D.

1987-01-01

Although gallium-67 was initially used for tumor imaging, clinical studies suggested its potential use as a method of detecting occult inflammatory lesions. The demonstration of diffuse myocardial uptake of gallium-67 during Lyme disease myocarditis is consistent with a pattern of diffuse myocarditis as seen in sarcoid myocarditis. Two cases are presented. A critical review of the various applications of gallium-67 scintigraphy to myocardium investigation is carried out [fr

On the nature of gallium species in gallium-modified mordenite and MFI zeolites. A comparative DRIFT study of carbon monoxide adsorption and hydrogen dissociation.

Science.gov (United States)

Serykh, Alexander I; Kolesnikov, Stanislav P

2011-04-21

The results of a DRIFT study of carbon monoxide molecular adsorption and hydrogen dissociative adsorption on gallium-modified mordenite and MFI (ZSM-5) zeolites are presented. It was found that in the reduced gallium-modified mordenite (Ga-MOR) both Ga(3+) and Ga(+) exchanged cations are present and can be detected by CO adsorption. Ga(3+) cations in Ga-MOR dissociatively adsorb molecular hydrogen at elevated temperatures, resulting in the formation of gallium hydride species and acidic hydroxyl groups. In the reduced Ga-MFI evacuated at 823 K under medium vacuum conditions only Ga(+) exchanged intrazeolite cations were detected. It was found, however, that Ga(3+) intrazeolite exchanged cations which form upon high-temperature disproportionation of Ga(+) cations in the reduced Ga-MFI and Ga-MOR can be stabilized by high-temperature oxidation of these zeolites.

Application of Self-Propagating High Temperature Synthesis to the Fabrication of Actinide Bearing Nitride and Other Ceramic Nuclear Fuels

International Nuclear Information System (INIS)

Moore, John J.; Reigel, Marissa M.; Donohoue, Collin D.

2009-01-01

The project uses an exothermic combustion synthesis reaction, termed self-propagating high-temperature synthesis (SHS), to produce high quality, reproducible nitride fuels and other ceramic type nuclear fuels (cercers and cermets, etc.) in conjunction with the fabrication of transmutation fuels. The major research objective of the project is determining the fundamental SHS processing parameters by first using manganese as a surrogate for americium to produce dense Zr-Mn-N ceramic compounds. These fundamental principles will then be transferred to the production of dense Zr-Am-N ceramic materials. A further research objective in the research program is generating fundamental SHS processing data to the synthesis of (i) Pu-Am-Zr-N and (ii) U-Pu-Am-N ceramic fuels. In this case, Ce will be used as the surrogate for Pu, Mn as the surrogate for Am, and depleted uranium as the surrogate for U. Once sufficient fundamental data has been determined for these surrogate systems, the information will be transferred to Idaho National Laboratory (INL) for synthesis of Zr-Am-N, Pu-Am-Zr-N and U-Pu-Am-N ceramic fuels. The high vapor pressures of americium (Am) and americium nitride (AmN) are cause for concern in producing nitride ceramic nuclear fuel that contains Am. Along with the problem of Am retention during the sintering phases of current processing methods, are additional concerns of producing a consistent product of desirable homogeneity, density and porosity. Similar difficulties have been experienced during the laboratory scale process development stage of producing metal alloys containing Am wherein compact powder sintering methods had to be abandoned. Therefore, there is an urgent need to develop a low-temperature or low-heat fuel fabrication process for the synthesis of Am-containing ceramic fuels. Self-propagating high temperature synthesis (SHS), also called combustion synthesis, offers such an alternative process for the synthesis of Am nitride fuels. Although SHS

Investigation into the use of molecular hydrogen on the growth of gallium nitride via metal-organic molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Billingsley, Daniel; Pritchett, David; Henderson, Walter; Carver, Alexander G.; Burnham, Shawn D.; Doolittle, W.A. [Georgia Institute of Technology, School of Electrical and Computer Engineering, 777 Atlantic Dr., Atlanta, GA 30332 (United States)

2008-07-01

Molecular hydrogen (H{sub 2}) has been investigated as a means to improve ammonia nitridation efficiency and attempts to reduce carbon contamination in ammonia-based metal-organic molecular beam epitaxy (MOMBE). A 30% improvement in crystalline quality, inferred from XRD, as well as an increase in subsequent GaN bulk growth rate was observed when bare sapphire was subject to H{sub 2} annealing before nitridation. However, the use of H{sub 2} during GaN homoepitaxy on GaN templates resulted in increased carbon contamination and decreased growth rate of GaN. The results demonstrate promise and proper uses of H{sub 2} during GaN growth under certain conditions. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Cleansing the colon in gallium-67 scintigraphy: a prospective comparison of regimens.

Science.gov (United States)

Novetsky, G J; Turner, D A; Ali, A; Raynor, W J; Fordham, E W

1981-11-01

Colonic accumulation of gallium-67 frequently complicates the interpretation of gallium-67 scintigrams. Although various modes of cleansing the colon prior to scintigraphy have been suggested, there is controversy over their efficacy and none have been tested prospectively. Three hundred nine patients undergoing gallium-67 scintigraphy were randomly assigned to one of four cleansing regimens: (1) a high fiber diet (78 patients); (2) castor oil (76); (3) milk of magnesia and cascara (76); and (4) not preparation (79). Patient compliance rates for the four regimens were 17%, 32%, 36%, and 46%, respectively. After noncompliant patients were excluded, gallium-67 scintigrams were graded for colonic activity on a scale of 0-3 by three independent, experienced observers. Gallium-67 activity in the colon was significantly less after administration of castor oil than after no preparation (p = 0.047). A high fiber diet also resulted in a substantial reduction of colonic activity when compared with no preparation; the difference, however, was not statistically significant (p = 0.083). Regimen 3 did not produce significantly better results than regimen 4 (p = 0.42). A major impediment to the success of any cleansing regimen seems to be poor compliance of patients.

Cleansing the colon in gallium-67 scintigraphy: a prospective comparison of regimens

International Nuclear Information System (INIS)

Novetsky, G.J.; Turner, D.A.; Ali, A.; Raynor, W.J. Jr.; Fordham, E.W.

1981-01-01

Colonic accumulation of gallium-67 frequently complicates the interpretation of gallium-67 scintigrams. Although various modes of cleansing the colon prior to scintigraphy have been suggested, there is controversy over their efficacy and none have been tested prospectively. Three hundred nine patients undergoing gallium-67 scintigraphy were randomly assigned to one of four cleansing regimens: (1) a high fiber diet (78 patients); (2) castor oil (76); (3) milk of magnesia and cascara (76); and (4) not preparation (79). Patient compliance rates for the four regimens were 17%, 32%, 36%, and 46%, respectively. After noncompliant patients were excluded, gallium-67 scintigrams were graded for colonic activity on a scale of 0-3 by three independent, experienced observers. Gallium-67 activity in the colon was significantly less after administration of castor oil than after no preparation (p . 0.047). A high fiber diet also resulted in a substantial reduction of colonic activity when compared with no preparation; the difference, however, was not statistically significant (p . 0.083). Regimen 3 did not produce significantly better results than regimen 4 (p . 0.42). A major impediment to the success of any cleansing regimen seems to be poor compliance of patients

The Effect of Nitriding Treatment Variables on the Fatigue Limit of Alloy Steel (34crnimo6) Under High Cycle Fatigue

International Nuclear Information System (INIS)

Mohamed, J.; Al-Alkawi, H.; Salameh, M.

2009-01-01

The aim of this research is to improve the fatigue limit for alloy steel (34CrNiMo6) by salt bath nitriding process. This property is more effective to increase the fatigue life for parts which are used in continuous cyclic loading. All the fatigue tests were implemented before and after nitriding process under rotating bending. Constant and variable capacity stresses were applied before and after nitriding processes. The nitriding process were implemented in salt bath component at three different times (1, 2, 3) hr when temperature was constant at (555 degree centigrade). The depth of the nitride layer reached (0.24, 0.37, 0.5) mm. The nitriding process repeated of another specimens at the same times but the temperature was (600 degree centigrade), the layer depth reached (0.28, 0.41, 0.55) mm. The formation of a high nitrogen iron phases were detected with a layer of the hard chrome nitrides on the surface. The nitriding process is forming the barriers on the surface that resist the initiation and propagation of cracks, as well as generating the compressive residual stresses which delay the progress of fatigue crack. This research deduced that the nitriding processes increased the fatigue limit and this limit is proportional to the time of the nitriding process. When the time increased, the depth of nitride layer is increased, but decreased when the temperature increased to (600 degree centigrade) because of the formation of brittle phase,in spite of the increase in layer depth. (author)

High heat load performance of an inclined crystal monochromator with liquid gallium cooling on the CHESS-ANL undulator

International Nuclear Information System (INIS)

Macrander, A.T.; Lee, W.K.; Smither, R.K.; Mills, D.M.

1992-01-01

Recent results for the performance of a novel double crystal monochromator subjected to high heat loads on an APS prototype undulator at the Cornell High Energy Synchrotron Source (CHESS) are presented. The monochromator was designed to achieve symmetric diffraction from asymmetric planes to spread out the beam footprint thereby lowering the incident power density. Both crystals had (111) oriented surfaces and were arranged such that the beam was diffracted from the (11 bar 1) planes at 5 KeV. Rocking curves with minimal distortion were obtained at a ring electron current of 100 mA. This corresponded to 380 Watts total power and an average power density of 40 Watts/mm 2 normal to the incident beam. These results are compared to data obtained from the same crystals in the standard geometry (diffracting planes parallel to surface). The footprint area in the inclined case was three times that of the standard case. We also obtained rocking curve data for the (333) reflection at 15 KeV for both standard and inclined cases, and these data also showed a minimal distortion only for the inclined case. In addition, thermal data were obtained via infrared pyrometry. Liquid gallium flow rates of up to 2 gallons per minute were investigated. The diffraction data revealed a dramatically improved performance for the inclined crystal case

Gallium nitrate: effects on cartilage during limb regeneration in the axolotl, Ambystoma mexicanum.

Science.gov (United States)

Tassava, Roy A; Mendenhall, Luciara; Apseloff, Glen; Gerber, Nicholas

2002-09-01

Gallium nitrate, a drug shown to have efficacy in Paget's disease of bone, hypercalcemia of malignancy, and a variety of experimental autoimmune diseases, also inhibits the growth of some types of cancer. We examined dose and timing of administration of gallium nitrate on limb regeneration in the Mexican axolotl, Ambystoma mexicanum. Administered by intraperitoneal injection, gallium nitrate inhibited limb regeneration in a dose-dependent manner. Gallium nitrate initially suppressed epithelial wound healing and subsequently distorted both anterior-posterior and proximo-distal chondrogenic patterns. Gallium nitrate given at three days after amputation severely inhibited regeneration at high doses (6.25 mg/axolotl) and altered the normal patterning of the regenerates at low doses (3.75 mg/axolotl). Administration of 6.25 mg of gallium nitrate at four or 14 days prior to amputation also inhibited regeneration. In amputated limbs of gallium-treated axolotls, the chondrocytes were lost from inside the radius/ulna. Limbs that regenerated after gallium treatment was terminated showed blastema formation preferentially over the ulna. New cartilage of the regenerate often attached to the sides of the existing radius/ulna proximally into the stump and less so to the distal cut ends. J. Exp. Zool. 293:384-394, 2002. Copyright 2002 Wiley-Liss, Inc.

High Dielectric Performance of Solution-Processed Aluminum Oxide-Boron Nitride Composite Films

Science.gov (United States)

Yu, Byoung-Soo; Ha, Tae-Jun

2018-04-01

The material compositions of oxide films have been extensively investigated in an effort to improve the electrical characteristics of dielectrics which have been utilized in various electronic devices such as field-effect transistors, and storage capacitors. Significantly, solution-based compositions have attracted considerable attention as a highly effective and practical technique to replace vacuum-based process in large-area. Here, we demonstrate solution-processed composite films consisting of aluminum oxide (Al2O3) and boron nitride (BN), which exhibit remarkable dielectric properties through the optimization process. The leakage current of the optimized Al2O3-BN thin films was decreased by a factor of 100 at 3V, compared to pristine Al2O3 thin film without a loss of the dielectric constant or degradation of the morphological roughness. The characterization by X-ray photoelectron spectroscopy measurements revealed that the incorporation of BN with an optimized concentration into the Al2O3 dielectric film reduced the density of oxygen vacancies which act as defect states, thereby improving the dielectric characteristics.

Gallium-67 imaging with low collimators and energy weighted acquisition

International Nuclear Information System (INIS)

Hamill, J.J.; DeVito, R.P.

1990-01-01

This paper reports that the medium and high energy collimators used in 67 Ga imaging have poorer resolution than low-energy collimators, such as the LEAP. The low energy collimators could be used for gallium imaging if the background under the 93 and 185 keV peaks could be reduced without degrading the signal-to-noise ratio unacceptably. energy weighted acquisition provides a means of accomplishing this background reduction. The authors have developed weighing functions for gallium imaging through LEAP and high resolution collimators. The resolution of the low energy collimators is realized while the background is comparable to, or better than, the background in normal, energy-window imaging with the medium energy collimator. The pixel noise is somewhat greater than the Poisson noise in normal gallium imaging, and some noise correlations, or noise texture, is introduced

Capacitive performance of molybdenum nitride/titanium nitride nanotube array for supercapacitor

Energy Technology Data Exchange (ETDEWEB)

Xie, Yibing, E-mail: ybxie@seu.edu.cn; Tian, Fang

2017-01-15

Highlights: • MoN{sub x}/TiN NTA is fully converted from MoO{sub 2}/TiO{sub 2} NTA by one-step nitridation process. • MoN{sub x}/TiN NTA is used as feasible electrode material of high-performance supercapacitor. • MoN{sub x}/TiN NTA shows high capacitance, rate capability and cycling stability. - Abstract: Molybdenum nitride (MoN{sub x}) depositing on titanium nitride nanotube array (TiN NTA) was designed as MoN{sub x}/TiN NTA for supercapacitor electrode material. MoN{sub x}/TiN NTA was fabricated by electrodepositing molybdenum oxide onto titanium dioxide NTA and one-step nitridation treatment in ammonia. MoN{sub x}/TiN NTA involved top-surface layer of MoN{sub x} nanoparticles and underlying layer of TiN NTA, which contributed to electric double layer capacitance in aqueous lithium-ion electrolyte solution. The specific capacitance was increased from 69.05 mF cm{sup −2} for TiN NTA to 121.50 mF cm{sup −2} for MoN{sub x}/TiN NTA at 0.3 mA cm{sup −2}, presenting the improved capacitance performance. MoN{sub x} exhibited the capacitance of 174.83 F g{sup −1} at 1.5 A g{sup −1} and slightly declined to 109.13 F g{sup −1} at 30 A g{sup −1}, presenting high rate capability. MoN{sub x}/TiN NTA exhibited the capacitance retention ratio of 93.8% at 3.0 mA cm{sup −2} after 1000 cycles, presenting high cycling stability. MoN{sub x}/TiN NTA could act as a promising electrode material of supercapacitor.

Hazy increased density in diffuse lung disease

International Nuclear Information System (INIS)

Klein, J.S.; Webb, W.R.; Gamsu, G.; Warnock, M.; Park, C.K.

1989-01-01

In order to determine the significance of ground glass density on high-resolution CT scans of patients with idiopathic pulmonary fibrosis and other lung disorders, the authors have reviewed 200 high-resolution CT studies and found 50 cases demonstrating areas of hazy increased lung density. Disease entities most often associated with this finding included DIP, UIP, alveolar proteinosis, sarcoidosis, and bronchiolitis obliterans/ organizing pneumonia. Pathologic examination revealed either cellular or fluid material lining terminal air spaces, often associated with alveolar wall infiltration and an absence of fibrosis. Gallium scans and bronchoalveolar lavage in some cases showed active inflammation Follow-up high-resolution CT studies in 10 patients showed either change or resolution of the hazy densities, confirming the presence of a reversible parenchymal lesion

Nitridation of U and Pu recovered in liquid Cd cathode by molten salt electrorefining of (U,Pu)N

Energy Technology Data Exchange (ETDEWEB)

Satoh, Takumi; Iwai, Takashi; Arai, Yasuo [Japan Atomic Energy Agency (Japan)

2009-06-15

Solid solutions of actinide mono-nitrides have been proposed as a candidate fuel of the accelerator-driven system (ADS) and Gen.IV-type fast reactors because the thermal conductivity and metal density are higher than those of actinide oxides and also they have high melting temperature. Pyrochemical process has several advantages over conventional wet process in treating of spent nitride fuel. One of the key technologies of the pyrochemical reprocessing of nitride fuel is the formation of the nitrides from actinides in the liquid Cd cathode. The nitridation-distillation combined method was developed and has been adopted to convert the actinides to the nitrides. In this method, the nitridation of actinides and the distillation of Cd occurred simultaneously by heating the actinide-Cd alloys in N{sub 2} gas stream. In the present study, the nitride formation behavior of U and Pu recovered in Cd cathode by molten salt electrorefining of (U,Pu)N was experimentally investigated. In addition, the nitride pellet was prepared form the powder obtained by the nitridation of U and Pu recovered in Cd cathode. (U,Pu)N (PuN = 80 mol %) was used as the starting material in the experiment. Molten salt electrorefining of (U,Pu)N pellet was carried out in the LiCl-KCl eutectic salt with 1.2 wt% PuCl{sub 3} and 0.3 wt% UCl{sub 3} of about 110 g at the constant anodic potential of -0.60 to -0.55 V vs. Ag/AgCl for about 9 hours at 773 K. After the electrorefining, about 42 % of U and Pu in the starting (U,Pu)N pellet was dissolved at the anode and recovered into the liquid Cd cathode. The recovered U-Pu-Cd alloy was heated in an alumina crucible at 973 K for 10 hours under N{sub 2} gas (99.999 %) stream (0.015 L/min). Fine black powder was recovered after heating the U-Pu-Cd alloy. The powder was identified as the single phase solid solution of (U,Pu)N by the XRD analysis. After milling in the agate mortar for 1 hour, the powder was compacted into green pellet under a pressure of about

Production of 15N for nitride type nuclear fuel

International Nuclear Information System (INIS)

Axente, Damian

2005-01-01

Full text: Nitride nuclear fuel is the choice for advanced nuclear reactors and ADS, considering its favorable properties as: melting point, excellent thermal conductivity, high fissile density, lower fission gas release and good radiation tolerance. The application of nitride fuels in different nuclear reactors requires use of 15 N enriched nitrogen to suppress 14 C production due to (n,p) reaction on 14 N. Nitride fuel is a promising candidate for transmutation in ADSs of radioactive minor actinides, which are converted into nitrides with 15 N for that purpose. Taking into account that at present the world wide 15 N market is about 20 - 40 Kg 15 N/y, the supply of that isotope for nitride type nuclear fuel, would demand an increase in production capacity by a factor of 1000. For an industrial plant producing 100 t/y 15 N at 99 at. % 15 N concentration, using present technology of 15 N/ 14 N isotopic exchange in Nitrox system, the first separation stage of the cascade would be fed with 10M HNO 3 solution at a 600 m 3 /h flow-rate. If conversion of HNO 3 into NO, NO 2 , at the enriching end of the columns, would be done with gaseous SO 2 , for an industrial plant of 100 t/y 15 N a consumption of 4 million t SO 2 /y and a production of 70 % H 2 SO 4 waste solution of 4.5 million m 3 /y are estimated. The reconversion of H 2 SO 4 into SO 2 in order to recycle SO 2 is a problem to be solved to compensate the cost of sulfur dioxide and to diminish the amount of sulfuric acid waste solution. It should be taken into consideration an important price reduction of 15 N in order to make possible its utilization for industrial production of nitride type nuclear fuel. (authors)

Gallium-cladding compatibility testing plan. Phases 1 and 2: Test plan for gallium corrosion tests. Revision 2

International Nuclear Information System (INIS)

Wilson, D.F.; Morris, R.N.

1998-05-01

This test plan is a Level-2 document as defined in the Fissile Materials Disposition Program Light-Water-Reactor Mixed-Oxide Fuel Irradiation Test Project Plan. The plan summarizes and updates the projected Phases 1 and 2 Gallium-Cladding compatibility corrosion testing and the following post-test examination. This work will characterize the reactions and changes, if any, in mechanical properties that occur between Zircaloy clad and gallium or gallium oxide in the temperature range 30--700 C

The Influence Of Nitridation Temperature And Time On The Surface Hardness Of AISI 1010 Low Carbon Steels Nitrided By Means Of Plasma Glow Discharge Technique

International Nuclear Information System (INIS)

Sujitno, Tjipto; Mujiman, Supardjono

1996-01-01

The results of the influence of nitridation temperature and time on the surface hardness of AISI 1010 low carbon steels nitrided by means of plasma glow discharge technique are presented in this paper. The results are the changing of surface hardiness, the changing of surface microstructure and the penetration profile depth. The experiment has been carried out at the temperature 400 o C, 450 o C, 500 o C, 550 o C, 570 o C and 600 o C, whereas the time is 5 minutes, 15 minutes, 40 minutes, 90 minutes and 180 minutes. All the experiments have been carried out at the optimum plasma density condition. The optimum plasma density condition is achieved at the pressure of p = 0.2 torr, when thr gas flow of nitrogen is 0.6 liter/minute and the distance of electrode plate is 4.5 cm. It was found that the optimum hardness of the surface was achieved at the temperature of 570 o C and the time of nitridation was 90 minutes, i.e. 190 KHN

Fusion bonding of silicon nitride surfaces

DEFF Research Database (Denmark)

Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

2011-01-01

While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

Microstructure and spectroscopy studies on cubic boron nitride synthesized under high-pressure conditions

Energy Technology Data Exchange (ETDEWEB)

Nistor, L C [National Institute for Materials Physics, Bucharest (Romania); Nistor, S V [National Institute for Materials Physics, Bucharest (Romania); Dinca, G [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Georgeoni, P [Dacia Synthetic Diamonds Factory, Bucharest (Romania); Landuyt, J van [University of Antwerpen - RUCA, EMAT, Antwerpen (Belgium); Manfredotti, C [Experimental Physics Department, University of Turin, Turin (Italy); Vittone, E [Experimental Physics Department, University of Turin, Turin (Italy)

2002-11-11

High-resolution electron microscopy (HREM) studies of the microstructure and specific defects in hexagonal boron nitride (h-BN) precursors and cubic boron nitride (c-BN) crystals made under high-pressure high-temperature conditions revealed the presence of half-nanotubes at the edges of the h-BN particles. Their sp{sup 3} bonding tendency could strongly influence the nucleation rates of c-BN. The atomic resolution at extended dislocations was insufficient to allow us to determine the stacking fault energy in the c-BN crystals. Its mean value of 191 pm, 15 mJ m{sup -2} is of the same order of magnitude as that of diamond. High-frequency (94 GHz) electron paramagnetic resonance studies on c-BN single crystals have produced new data on the D1 centres associated with the boron species. Ion-beam-induced luminescence measurements have indicated that c-BN is a very interesting luminescent material, which is characterized by four luminescence bands and exhibits a better resistance to ionizing radiation than CVD diamond.

Interactions of Zircaloy cladding with gallium: 1998 midyear status

International Nuclear Information System (INIS)

Wilson, D.F.; DiStefano, J.R.; Strizak, J.P.; King, J.F.; Manneschmidt, E.T.

1998-06-01

A program has been implemented to evaluate the effect of gallium in mixed-oxide (MOX) fuel derived from weapons-grade (WG) plutonium on Zircaloy cladding performance. The objective is to demonstrate that low levels of gallium will not compromise the performance of the MOX fuel system in a light-water reactor. The graded, four-phase experimental program was designed to evaluate the performance of prototypic Zircaloy cladding materials against (1) liquid gallium (Phase 1), (2) various concentrations of Ga 2 O 3 (Phase 2), (3) centrally heated surrogate fuel pellets with expected levels of gallium (Phase 3), and (4) centrally heated prototypic MOX fuel pellets (Phase 4). This status report describes the results of a series of tests for Phases 1 and 2. Three types of tests are being performed: (1) corrosion, (2) liquid metal embrittlement, and (3) corrosion-mechanical. These tests will determine corrosion mechanisms, thresholds for temperature and concentration of gallium that may delineate behavioral regimes, and changes in the mechanical properties of Zircaloy. Initial results have generally been favorable for the use of WG-MOX fuel. The MOX fuel cladding, Zircaloy, does react with gallium to form intermetallic compounds at ≥300 C; however, this reaction is limited by the mass of gallium and is therefore not expected to be significant with a low level (parts per million) of gallium in the MOX fuel. Although continued migration of gallium into the initially formed intermetallic compound can result in large stresses that may lead to distortion, this was shown to be extremely unlikely because of the low mass of gallium or gallium oxide present and expected clad temperatures below 400 C. Furthermore, no evidence for grain boundary penetration by gallium has been observed

Properties of gallium arsenide alloyed with Ge and Se by irradiation in nuclear reactor thermal column

International Nuclear Information System (INIS)

Kolin, N.G.; Osvenskij, V.B.; Tokarevskij, V.V.; Kharchenko, V.A.; Ievlev, S.M.

1985-01-01

Dependences of electrophysical properties as well as lattice unit spacing and density of nuclear-alloyed gallium arsenide on the fluence of reactor neutrons and heat treatment are investigated. Neutron radiation of gallium arsenide with different energy spectra is shown to differently affect material properties. Fast neutrons make the main contribution to defect formation. Concentration of compensating acceptor defects formed under GaAs radiation in a thermal column practically equals concentration of introduced donor impurities. Radiation defects of acceptor type are not annealed in the material completely even at 900-1000 deg C

Nano-particulate Aluminium Nitride/Al: An Efficient and Versatile Heterogeneous Catalyst for the Synthesis of Biginelli Scaffolds

Science.gov (United States)

Tekale, S. U.; Tekale, A. B.; Kanhe, N. S.; Bhoraskar, S. V.; Pawar, R. P.

2011-12-01

Nano-particulate aluminium nitride/Al (7:1) is reported as a new heterogeneous solid acid catalyst for the synthesis of 3, 4-dihydroxypyrimidi-2-(1H)-ones and their sulphur analogues using the Biginelli reaction. This method involves short reaction time, easy separation, high yields and purity of products.

Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides

Science.gov (United States)

Liu, Zhiqiang; Huang, Yang; Yi, Xiaoyan; Fu, Binglei; Yuan, Guodong; Wang, Junxi; Li, Jinmin; Zhang, Yong

2016-08-01

A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 1018 cm-3 was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.

NIM Realization of the Gallium Triple Point

Science.gov (United States)

Xiaoke, Yan; Ping, Qiu; Yuning, Duan; Yongmei, Qu

2003-09-01

In the last three years (1999 to 2001), the gallium triple-point cell has been successfully developed, and much corresponding research has been carried out at the National Institute of Metrology (NIM), Beijing, China. This paper presents the cell design, apparatus and procedure for realizing the gallium triple point, and presents studies on the different freezing methods. The reproducibility is 0.03 mK, and the expanded uncertainty of realization of the gallium triple point is evaluated to be 0.17 mK (p=0.99, k=2.9). Also, the reproducibility of the gallium triple point was compared with that of the triple point of water.

III-nitrides, 2D transition metal dichalcogenides, and their heterojunctions

KAUST Repository

Mishra, Pawan

2017-04-01

Group III-nitride materials have attracted great attention for applications in high efficiency electronic and optoelectronics devices such as high electron mobility transistors, light emitting diodes, and laser diodes. On the other hand, group VI transition metal dichalcogenides (TMDs) in the form of MX2 has recently emerged as a novel atomic layered material system with excellent thermoelectric, electronic and optoelectronic properties. Also, the recent investigations reveal that the dissimilar heterojunctions formed by TMDs and III-nitrides provide the route for novel devices in the area of optoelectronic, electronics, and water splitting applications. In addition, integration of III-nitrides and TMDs will enable high density integrated optoelectronic circuits and the development of hybrid integration technologies. In this work, we have demonstrated kinetically controlled growth processes in plasma assisted molecular beam epitaxy (PAMBE) for the III-nitrides and their engineered heterostructures. Techniques such as Ga irradiation and nitrogen plasma exposure has been utilized to implement bulk GaN, InGaN and their heterostructures in PAMBE. For the growth of III-nitride based heterostructures, the in-situ surface stoichiometry monitoring (i-SSM) technique was developed and used for implementing stepped and compositionally graded InGaN-based multiple quantum wells (MQWs). Their optical and microstrain analysis in conjunction with theoretical studies confirmed improvement in the radiative recombination rate of the graded-MQWs as compared to that of stepped-MQWs, owing to the reduced strain in graded-MQWs. Our achievement also includes the realization of the p-type MoS2 by engineering pristine MoS2 layers in PAMBE. Mainly, Ga and nitrogen plasma irradiation on the pristine MoS2 in PAMBE has resulted in the realization of the p-type MoS2. Also, GaN epitaxial thin layers were deposited on MoS2/c-sapphire, WSe2/c-sapphire substrates by PAMBE to study the band

Increased carrier lifetimes in epitaxial silicon layers on buried silicon nitride produced by ion implantation

International Nuclear Information System (INIS)

Skorupa, W.; Kreissig, U.; Hensel, E.; Bartsch, H.

1984-01-01

Carrier lifetimes were measured in epitaxial silicon layers deposited on buried silicon nitride produced by high-dose nitrogen implantation at 330 keV. The values were in the range 20-200 μs. The results are remarkable taking into account the high density of crystal defects in the epitaxial layers. Comparing with other SOI technologies the measured lifetimes are higher by 1-2 orders of magnitude. (author)

High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography.

Science.gov (United States)

Hölz, K; Lietard, J; Somoza, M M

2017-01-03

Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p -type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination.

Plasma nitriding of steels

CERN Document Server

Aghajani, Hossein

2017-01-01

This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

Fluorimetric analysis of gallium in bauxite, by-products, products from gallium processing and its control solutions

International Nuclear Information System (INIS)

Ferreira, C.A.M.; Medeiros, V.

1987-01-01

The gallium processing since raw material analysis until end-products analysis is studied. Gallium presence in by-products and products, as well as the fluorimetric method is analyzed. Equipments and materials used in laboratory, reagents and chemical solutions are described. (M.J.C.) [pt

Rutherford backscatter measurements on tellurium and cadmium implanted gallium arsenide

International Nuclear Information System (INIS)

Bell, E.C.

1979-10-01

The primary aim of the work described in this thesis was to examine implanted layers of the dopant impurities cadmium and tellurium in gallium arsenide and to experimentally assess their potential for producing electrically active layers. 1.5 MeV Rutherford backscattering measurements of lattice disorder and atom site location have been used to assess post implantation thermal annealing and elevated temperature implantations to site the dopant impurities on either gallium or arsenic lattice positions in an otherwise undisordered lattice. Pyrolitically deposited silicon dioxide was used as an encapsulant to prevent thermal dissociation of the gallium arsenide during annealing. It has been shown that high doses of cadmium and tellurium can be implanted without forming amorphous lattice disorder by heating the gallium arsenide during implantation to relatively low temperatures. Atom site location measurements have shown that a large fraction of a tellurium dose implanted at 180 0 C is located on or near lattice sites. Channeled backscatter measurements have shown that there is residual disorder or lattice strain in gallium arsenide implanted at elevated temperatures. The extent of this disorder has been shown to depend on the implanted dose and implantation temperature. The channeling effect has been used to measure annealing of the disorder. (author)

The influence of processing conditions on the microstructure and the mechanical properties of reaction sintered silicon nitride

International Nuclear Information System (INIS)

Heinrich, J.

1979-09-01

The microstructure of reaction sintered silicon nitride (RBSN) was changed in a wide range of varying green density, grain size of the silicon starting powder, nitriding conditions, and by introducing artificial pores. The influence of single microstructural parameters on mechanical properties like room temperature strength, creep behaviour, and resistance to thermal shock has been investigated. The essential factors influencing these properties were found to be total porosity, pore size distribution, and the fractions of α- and β-Si 3 N 4 . In view of high temperature engineering applications of RBSN possibilities to optimize the material's properties by controlled processing are discussed. (orig.) [de

Anomalous Threshold Voltage Variability of Nitride Based Charge Storage Nonvolatile Memory Devices

Directory of Open Access Journals (Sweden)

Meng Chuan Lee

2013-01-01

Full Text Available Conventional technology scaling is implemented to meet the insatiable demand of high memory density and low cost per bit of charge storage nonvolatile memory (NVM devices. In this study, effect of technology scaling to anomalous threshold voltage ( variability is investigated thoroughly on postcycled and baked nitride based charge storage NVM devices. After long annealing bake of high temperature, cell’s variability of each subsequent bake increases within stable distribution and found exacerbate by technology scaling. Apparent activation energy of this anomalous variability was derived through Arrhenius plots. Apparent activation energy (Eaa of this anomalous variability is 0.67 eV at sub-40 nm devices which is a reduction of approximately 2 times from 110 nm devices. Technology scaling clearly aggravates this anomalous variability, and this poses reliability challenges to applications that demand strict control, for example, reference cells that govern fundamental program, erase, and verify operations of NVM devices. Based on critical evidence, this anomalous variability is attributed to lateral displacement of trapped charges in nitride storage layer. Reliability implications of this study are elucidated. Moreover, potential mitigation methods are proposed to complement technology scaling to prolong the front-runner role of nitride based charge storage NVM in semiconductor flash memory market.

Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

DEFF Research Database (Denmark)

Mohammadzadeh, Roghayeh; Akbari, Alireza; Grumsen, Flemming Bjerg

2017-01-01

Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe–22.7Cr–2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition......, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride...... precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic...

Amorphous gallium oxide grown by low-temperature PECVD

KAUST Repository

Kobayashi, Eiji; Boccard, Mathieu; Jeangros, Quentin; Rodkey, Nathan; Vresilovic, Daniel; Hessler-Wyser, Aï cha; Dö beli, Max; Franta, Daniel; De Wolf, Stefaan; Morales-Masis, Monica; Ballif, Christophe

2018-01-01

demonstrate the growth of hydrogenated amorphous gallium oxide (a-GaO:H) thin-films by plasma-enhanced chemical vapor deposition (PECVD) at temperatures below 200 °C. In this way, conformal films are deposited at high deposition rates, achieving high broadband

Boron, phosphorus, and gallium determination in silicon crystals doped with gallium

International Nuclear Information System (INIS)

Shklyar, B.L.; Dankovskij, Yu.V.; Trubitsyn, Yu.V.

1989-01-01

When studying IR transmission spectra of silicon doped with gallium in the range of concentrations 1 x 10 14 - 5 x 10 16 cm -3 , the possibility to quantity at low (∼ 20 K) temperatures residual impurities of boron and phosphorus is ascertained. The lower determination limit of boron is 1 x 10 12 cm -3 for a sample of 10 nm thick. The level of the impurities in silicon crystals, grown by the Czochralski method and method of crucible-free zone melting, is measured. Values of boron and phosphorus concentrations prior to and after their alloying with gallium are compared

Surface Area, and Oxidation Effects on Nitridation Kinetics of Silicon Powder Compacts

Science.gov (United States)

Bhatt, R. T.; Palczer, A. R.

1998-01-01

Commercially available silicon powders were wet-attrition-milled from 2 to 48 hr to achieve surface areas (SA's) ranging from 1.3 to 70 sq m/g. The surface area effects on the nitridation kinetics of silicon powder compacts were determined at 1250 or 1350 C for 4 hr. In addition, the influence of nitridation environment, and preoxidation on nitridation kinetics of a silicon powder of high surface area (approximately equals 63 sq m/g) was investigated. As the surface area increased, so did the percentage nitridation after 4 hr in N2 at 1250 or 1350 C. Silicon powders of high surface area (greater than 40 sq m/g) can be nitrided to greater than 70% at 1250 C in 4 hr. The nitridation kinetics of the high-surface-area powder compacts were significantly delayed by preoxidation treatment. Conversely, the nitridation environment had no significant influence on the nitridation kinetics of the same powder. Impurities present in the starting powder, and those accumulated during attrition milling, appeared to react with the silica layer on the surface of silicon particles to form a molten silicate layer, which provided a path for rapid diffusion of nitrogen and enhanced the nitridation kinetics of high surface area silicon powder.

Automated realization of the gallium melting and triple points

Science.gov (United States)

Yan, X.; Duan, Y.; Zhang, J. T.; Wang, W.

2013-09-01

In order to improve the automation and convenience of the process involved in realizing the gallium fixed points, an automated apparatus, based on thermoelectric and heat pipe technologies, was designed and developed. This paper describes the apparatus design and procedures for freezing gallium mantles and realizing gallium melting and triple points. Also, investigations on the melting behavior of a gallium melting point cell and of gallium triple point cells were carried out while controlling the temperature outside the gallium point cells at 30 °C, 30.5 °C, 31 °C, and 31.5 °C. The obtained melting plateau curves show dentate temperature oscillations on the melting plateaus for the gallium point cells when thermal couplings occurred between the outer and inner liquid-solid interfaces. The maximum amplitude of the temperature fluctuations was about 1.5 mK. Therefore, the temperature oscillations can be used to indicate the ending of the equilibrium phase transitions. The duration and amplitude of such temperature oscillations depend on the temperature difference between the setting temperature and the gallium point temperature; the smaller the temperature difference, the longer the duration of both the melting plateaus and the temperature fluctuations.

Structure, phonons and related properties in zinc-IV-nitride (IV = silicon, germanium, tin), scandium nitride, and rare-earth nitrides

Science.gov (United States)

Paudel, Tula R.

This thesis presents a study of the phonons and related properties in two sets of nitride compounds, whose properties are until now relatively poorly known. The Zn-IV-N2 group of compounds with the group IV elements Si, Ge and Sn, form a series analogous to the well known III-N nitride series with group III element Al, Ga, In. Structurally, they can be derived by doubling the period of III-V compounds in the plane in two directions and replacing the group-III elements with Zn and a group-IV element in a particular ordered pattern. Even though they are similar to the well-known III-V nitride compounds, the study of the properties of these materials is in its early stages. The phonons in these materials and their relation to the phonons in the corresponding group-III nitrides are of fundamental interest. They are also of practical interest because the phonon related spectra such as infrared absorption and Raman spectroscopy are sensitive to the structural quality of the material and can thus be used to quantify the degree of crystalline perfection of real samples. First-principles calculations of the phonons and related ground state properties of these compounds were carried out using Density Functional Perturbation Theory (DFPT) with the Local Density Approximation (LDA) for exchange and correlation and using a pseudopotential plane wave implementation which was developed by several authors over the last decades. The main focus of our study is on the phonons at the center of the Brillouin zone because the latter are most directly related to commonly used spectroscopies to probe the vibrations in a solid: infrared reflectivity and Raman spectroscopy. For a semiconducting or insulating compound, a splitting occurs between transverse and longitudinal phonons at the Gamma-point because of the long-range nature of electrostatic forces. The concepts required to handle this problem are reviewed. Our discussion emphasizes how the various quantities required are related to

Problems and possibilities of development of boron nitride ceramics

International Nuclear Information System (INIS)

Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

1988-01-01

The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

Synchrotron white beam topographic studies of gallium arsenide crystals

International Nuclear Information System (INIS)

Wierzchowski, W.; Wieteska, K.; Graeff, W.

1997-01-01

A series of samples cut out from different types of gallium arsenide crystals with low dislocation density were studied by means of white beam synchrotron topography. The investigation was performed with transmission and black-reflection projection methods and transmission section method. Some of topographs in transmission geometry provided a very high sensitivity suitable for revealing small precipitates. The transmission section images significantly differed depending on the wavelength and absorption. In some cases a distinct Pendelloesung fringes and fine details of dislocation and precipitates images were observed. It was possible to reproduce the character of these images by means of numerical simulation based on integration of Takagi-Taupin equations. Due to more convenient choice of radiation, synchrotron back-reflection projection topography provided much better visibility of dislocations than analogous realized with conventional X-ray sources. (author)

GaN/NbN epitaxial semiconductor/superconductor heterostructures

Science.gov (United States)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Cleansing the colon in gallium-67 scintigraphy: a prospective comparison of regimens

International Nuclear Information System (INIS)

Novetsky, G.J.; Turner, D.A.; Ali, A.; Raynor, W.J.; Fordham, E.W.

1981-01-01

Colonic accumulation of gallium-67 frequently complicates the interpretation of gallium-67 scintigrams. Although various modes of cleansing the colon prior to scintigraphy have been suggested, there is controversy over their efficacy and none have been tested prospectively. Three hundred nine patients undergoing gallium-67 scintigraphy were randomly assigned to one of four cleansing regimens: (1) a high fiber diet (78 patients); (2) castor oil (76); (3) milk of magnesia and cascara (76); and (4) no preparation (79). Patient compliance rates for the four regimens were 17%, 32%, 36%, and 46%, respectively. After noncompliant patients were excluded, gallium-67 scintigrams were graded for colonic activity on a scale of 0-3 by three independent, experienced observers. Gallium-67 activity in the colon was significantly less after adminstration of castor oil than after no prepartion (p = 0.083). Regimen 3 did not produce significantly better results than regimen 4 (p = 0.42). A major impediment to the success of any cleansing regimen seems to be poor compliance of patients

Discontinuous precipitation in a nickel-free high nitrogen austenitic stainless steel on solution nitriding

Science.gov (United States)

Mohammadzadeh, Roghayeh; Akbari, Alireza; Grumsen, Flemming B.; Somers, Marcel A. J.

2017-10-01

Chromium-rich nitride precipitates in production of nickel-free austenitic stainless steel plates via pressurised solution nitriding of Fe-22.7Cr-2.4Mo ferritic stainless steel at 1473 K (1200 °C) under a nitrogen gas atmosphere was investigated. The microstructure, chemical and phase composition, morphology and crystallographic orientation between the resulted austenite and precipitates were investigated using optical microscopy, X-ray Diffraction (XRD), Scanning and Transmission Electron Microscopy (TEM) and Electron Back Scatter Diffraction (EBSD). On prolonged nitriding, Chromium-rich nitride precipitates were formed firstly close to the surface and later throughout the sample with austenitic structure. Chromium-rich nitride precipitates with a rod or strip-like morphology was developed by a discontinuous cellular precipitation mechanism. STEM-EDS analysis demonstrated partitioning of metallic elements between austenite and nitrides, with chromium contents of about 80 wt.% in the precipitates. XRD analysis indicated that the Chromium-rich nitride precipitates are hexagonal (Cr, Mo)2N. Based on the TEM studies, (Cr, Mo)2N precipitates presented a (1 1 1)γ//(0 0 2)(Cr, Mo)2N, ?γ//?(Cr, Mo)2N orientation relationship with respect to the austenite matrix. EBSD studies revealed that the austenite in the regions that have transformed into austenite and (Cr, Mo)2N have no orientation relation to the untransformed austenite.

Modeling of thermal stress induced during the diamond-coating of ALGaN/GaN high electron mobility transistors

Czech Academy of Sciences Publication Activity Database

Jirásek, Vít; Ižák, Tibor; Babchenko, Oleg; Kromka, Alexander; Vanko, G.

2013-01-01

Roč. 5, č. 6 (2013), s. 522-526 ISSN 2164-6627 R&D Projects: GA ČR(CZ) GBP108/12/G108 Institutional support: RVO:68378271 Keywords : nano-crystalline diamond * gallium nitride * HEMT * selective diamond growth Subject RIV: BM - Solid Matter Physics ; Magnetism

Effects of low-temperature (120 °C) annealing on the carrier concentration and trap density in amorphous indium gallium zinc oxide thin film transistors

Energy Technology Data Exchange (ETDEWEB)

Kim, Jae-sung; Piao, Mingxing; Jang, Ho-Kyun; Kim, Gyu-Tae, E-mail: gtkim@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Oh, Byung Su [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Display Company, Yongin (Korea, Republic of); Joo, Min-Kyu [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); IMEP-LAHC, Grenoble INP, Minatec, CS 50257, 38016 Grenoble (France); Ahn, Seung-Eon [School of Electrical Engineering, Korea University, Seoul 136-701 (Korea, Republic of); Samsung Advanced Institute of Technology, Samsung Electronics Corporations, Yongin 446-712 (Korea, Republic of)

2014-12-28

We report an investigation of the effects of low-temperature annealing on the electrical properties of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs). X-ray photoelectron spectroscopy was used to characterize the charge carrier concentration, which is related to the density of oxygen vacancies. The field-effect mobility was found to decrease as a function of the charge carrier concentration, owing to the presence of band-tail states. By employing the transmission line method, we show that the contact resistance did not significantly contribute to the changes in device performance after annealing. In addition, using low-frequency noise analyses, we found that the trap density decreased by a factor of 10 following annealing at 120 °C. The switching operation and on/off ratio of the a-IGZO TFTs improved considerably after low-temperature annealing.

White light-emitting diodes (LEDs) using (oxy)nitride phosphors

International Nuclear Information System (INIS)

Xie, R-J; Hirosaki, N; Sakuma, K; Kimura, N

2008-01-01

(Oxy)nitride phosphors have attracted great attention recently because they are promising luminescent materials for phosphor-converted white light-emitting diodes (LEDs). This paper reports the luminescent properties of (oxy)nitride phosphors in the system of M-Si-Al-O-N (M = Li, Ca or Sr), and optical properties of white LEDs using a GaN-based blue LED and (oxy)nitride phosphors. The phosphors show high conversion efficiency of blue light, suitable emission colours and small thermal quenching. The bichromatic white LEDs exhibit high luminous efficacy (∼55 lm W -1 ) and the multi-phosphor converted white LEDs show high colour rendering index (Ra 82-95). The results indicate that (oxy)nitride phosphors demonstrate their superior suitability to use as down-conversion luminescent materials in white LEDs

Waste conversion into high-value ceramics: Carbothermal nitridation synthesis of titanium nitride nanoparticles using automotive shredder waste.

Science.gov (United States)

Mayyas, Mohannad; Pahlevani, Farshid; Maroufi, Samane; Liu, Zhao; Sahajwalla, Veena

2017-03-01

Environmental concern about automotive shredder residue (ASR) has increased in recent years due to its harmful content of heavy metals. Although several approaches of ASR management have been suggested, these approaches remain commercially unproven. This study presents an alternative approach for ASR management where advanced materials can be generated as a by-product. In this approach, titanium nitride (TiN) has been thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) and titanium oxide (TiO 2 ). Interactions between TiO 2 and ASR at non-isothermal conditions were primarily investigated using thermogravimetric analysis (TGA) and differential scanning calorimetry. Results indicated that TiO 2 influences and catalyses degradation reactions of ASR, and the temperature, at which reduction starts, was determined around 980 °C. The interaction between TiO 2 and ASR at isothermal conditions in the temperature range between 1200 and 1550 °C was also studied. The pressed mixture of both materials resulted in titanium nitride (TiN) ceramic at all given temperatures. Formation kinetics were extracted using several models for product layer diffusion-controlled solid-solid and solid-fluid reactions. The effect of reactants ratio and temperature on the degree of conversion and morphology was investigated. The effect of reactants ratio was found to have considerable effect on the morphology of the resulting material, while temperature had a lesser impact. Several unique structures of TiN (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) were obtained by simply tuning the ratio of TiO 2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C. Copyright © 2016 Elsevier Ltd. All rights reserved.

Gallium uptake in myositis ossificans. Potential pitfalls in diagnosis

International Nuclear Information System (INIS)

Salzman, L.; Lee, V.W.; Grant, P.

1987-01-01

Seven cases of gallium uptake in myositis ossificans are described. Gallium scans are done frequently in paraplegics, quadriplegics, and comatose patients to look for occult infection. It is important to be aware of possible gallium uptake in myositis ossificans, particularly in the extremities, which is frequent in these patients. Gallium uptake may be present prior to any abnormalities seen on plain films or CT scans. It is important to correlate roentgenograms with abnormal gallium scans, particularly in the extremities, to avoid potential pitfalls in diagnosis and prevent unnecessary antibiotic treatment. A bone scan should be obtained whenever possible, particularly when roentgenograms are negative, to confirm the diagnosis

Laboratory Directed Research and Development (LDRD) on Mono-uranium Nitride Fuel Development for SSTAR and Space Applications

International Nuclear Information System (INIS)

Choi, J; Ebbinghaus, B; Meiers, T; Ahn, J

2006-01-01

NASA space reactor, the SP-100 was designed to use mono-uranium nitride fuel. Although the SP-100 reactor was not commissioned, tens of thousand of nitride fuel pellets were manufactured and lots of them, cladded in Nb-1-Zr had been irradiated in fast test reactors (FFTF and EBR-II) with good irradiation results. The Russian Naval submarines also use nitride fuel with stainless steel cladding (HT-9) in Pb-Bi coolant. Although the operating experience of the Russian submarine is not readily available, such combination of fuel, cladding and coolant has been proposed for a commercial-size liquid-metal cooled fast reactor (BREST-300). Uranium mono-nitride fuel is studied in this LDRD Project due to its favorable properties such as its high actinide density and high thermal conductivity. The thermal conductivity of mono-nitride is 10 times higher than that of oxide (23 W/m-K for UN vs. 2.3 W/m-K for UO 2 at 1000 K) and its melting temperature is much higher than that of metal fuel (2630 C for UN vs. 1132 C for U metal). It also has relatively high actinide density, (13.51 gU/cm 3 in UN vs. 9.66 gU/cm 3 in UO 2 ) which is essential for a compact reactor core design. The objective of this LDRD Project is to: (1) Establish a manufacturing capability for uranium-based ceramic nuclear fuel, (2) Develop a computational capability to analyze nuclear fuel performance, (3) Develop a modified UN-based fuel that can support a compact long-life reactor core, and (4) Collaborate with the Nuclear Engineering Department of UC Berkeley on nitride fuel reprocessing and disposal in a geologic repository

Technetium-99m DTPA aerosol and gallium scanning in acquired immune deficiency syndrome

International Nuclear Information System (INIS)

Picard, C.; Meignan, M.; Rosso, J.; Cinotti, L.; Mayaud, C.; Revuz, J.

1987-01-01

In 11 non-smoking AIDS patients suspected of pneumocystis carinii pneumonia (PCP), the results of Tc-99m DTPA aerosol clearances, gallium scans, and arterial blood gases were compared with those of bronchoalveolar lavage (BAL). Nine patients had PCP. All had increased clearances five times higher than the normal (5.6 +/- 2.3% X min-1 vs 1.1 +/- 0.34% X min-1, N = 10, P less than 0.001), suggesting an increased alveolar permeability. Gallium scans were abnormal in six patients but normal or slightly abnormal in the three others. Four of these nine patients had normal chest x-rays. In two of these the gallium scan was abnormal, but in the two others, only the increased Tc-99m DTPA clearances showed evidence of lung disease. Two patients had normal BAL, with normal clearances and gallium scans. Four out of the nine patients with PCP were studied after treatment. Three recovered and had normal clearance and gallium scans. One still had PCP with increased clearance but normal gallium scan. Gallium scanning and Tc-99m DTPA clearance are useful for detecting lung disease in AIDS patients with suspected PCP and for prompting BAL when chest x-rays and PaO 2 levels are normal. Due to its high sensitivity, a normal Tc-99m DTPA clearance could avoid BAL

ASSESSMENT OF GALLIUM OXIDE TECHNOLOGY

Science.gov (United States)

2017-08-01

AFRL-RY-WP-TR-2017-0167 ASSESSMENT OF GALLIUM OXIDE TECHNOLOGY Burhan Bayraktaroglu Devices for Sensing Branch Aerospace...TITLE AND SUBTITLE ASSESSMENT OF GALLIUM OXIDE TECHNOLOGY 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER N/A 6...report summarizes the current status of the Ga2O3 technology based on published results on theoretical electronic structure, materials growth, and

Liquid gallium jet-plasma interaction studies in ISTTOK tokamak

International Nuclear Information System (INIS)

Gomes, R.B.; Fernandes, H.; Silva, C.; Sarakovskis, A.; Pereira, T.; Figueiredo, J.; Carvalho, B.; Soares, A.; Duarte, P.; Varandas, C.; Lielausis, O.; Klyukin, A.; Platacis, E.; Tale, I.; Alekseyv, A.

2009-01-01

Liquid metals have been pointed out as a suitable solution to solve problems related to the use of solid walls submitted to high power loads allowing, simultaneously, an efficient heat exhaustion process from fusion devices. The most promising candidate materials are lithium and gallium. However, lithium has a short liquid state temperature range when compared with gallium. To explore further this property, ISTTOK tokamak is being used to test the interaction of a free flying liquid gallium jet with the plasma. ISTTOK has been successfully operated with this jet without noticeable discharge degradation and no severe effect on the main plasma parameters or a significant plasma contamination by liquid metal. Additionally the response of an infrared sensor, intended to measure the jet surface temperature increase during its interaction with the plasma, has been studied. The jet power extraction capability is extrapolated from the heat flux profiles measured in ISTTOK plasmas.

Effect of Plasma Nitriding Process Conditions on Corrosion Resistance of 440B Martensitic Stainless Steel

Directory of Open Access Journals (Sweden)

Łępicka Magdalena

2014-09-01

Full Text Available Martensitic stainless steels are used in a large number of various industrial applications, e.g. molds for plastic injections and glass moldings, automotive components, cutting tools, surgical and dental instruments. The improvement of their tribological and corrosion properties is a problem of high interest especially in medical applications, where patient safety becomes a priority. The paper covers findings from plasma nitrided AISI 440B (PN-EN or DIN X90CrMoV18 stainless steel corrosion resistance studies. Conventionally heat treated and plasma nitrided in N2:H2 reaction gas mixture (50:50, 65:35 and 80:20, respectively in two different temperature ranges (380 or 450°C specimens groups were examined. Microscopic observations and electrochemical corrosion tests were performed using a variety of analytical techniques. As obtained findings show, plasma nitriding of AISI 440B stainless steel, regardless of the process temperature, results in reduction of corrosion current density. Nevertheless, applying thermo-chemical process which requires exceeding temperature of about 400°C is not recommended due to increased risk of steel sensitization to intergranular and stress corrosion. According to the results, material ion nitrided in 450°C underwent leaching corrosion processes, which led to significant disproportion in chemical composition of the corroded and corrosion-free areas. The authors suggest further research into corrosion process of plasma nitrided materials and its degradation products.

Development of pseudocapacitive molybdenum oxide–nitride for electrochemical capacitors

Energy Technology Data Exchange (ETDEWEB)

Ting, Yen-Jui Bernie [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Wu, Haoran [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Kherani, Nazir P. [Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada); Lian, Keryn, E-mail: keryn.lian@utoronto.ca [Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario M5S 3E4 (Canada)

2015-03-15

A thin film Mo oxide–nitride pseudocapacitive electrode was synthesized by electrodeposition of Mo oxide on Ti and a subsequent low-temperature (400 °C) thermal nitridation. Two nitridation environments, N{sub 2} and NH{sub 3}, were used and the results were compared. Surface analyses of these nitrided films showed partial conversion of Mo oxide to nitrides, with a lower conversion percentage being the film produced in N{sub 2}. However, the electrochemical analyses showed that the surface of the N{sub 2}-treated film had better pseudocapacitive behaviors and outperformed that nitrided in NH{sub 3}. Cycle life of the resultant N{sub 2}-treated Mo oxide–nitride was also much improved over Mo oxide. A two-electrode cell using Mo oxide–nitride electrodes was demonstrated and showed high rate performance. - Highlights: • Mo(O,N){sub x} was developed by electrodeposition and nitridation in N{sub 2} or NH{sub 3}. • N{sub 2} treated Mo(O,N){sub x} showed a capacitive performance superior to that treated by NH{sub 3}. • The promising electrochemical performance was due to the formation of γ-Mo{sub 2}N.

GaN-based High Efficiency Bidirectional DC-DC Converter with 10 MHz Switching Frequency

DEFF Research Database (Denmark)

Kruse, Kristian; Zhang, Zhe; Elbo, Mads

2017-01-01

-isolated bidirectional DC-DC converter equipped with Gallium Nitride (GaN) semiconductor transistors is presented. The converter’s operation principles, zero-voltage switching (ZVS) constraints and dead-time effects are studied. Moreover, the optimization and tradeoffs on the adopted high-frequency inductor...... are achieved. Moreover, the measured losses can match the theoretically calculated counterparts well, therefore the design and analysis are verified. However, from the experimental test carried out, it can also be seen, that making a compact converter, even for a GaN-based one, operate at 10 MHz and 100 W...

Ion nitriding of aluminium

International Nuclear Information System (INIS)

Fitz, T.

2002-09-01

The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

Gallium scintigraphy in Hansen's disease

International Nuclear Information System (INIS)

Braga, F.J.H.N.; Sao Paulo Univ., SP; Araejo, E.B.; Camargo, E.E.; Tedesco-Marchesi, L.C.M.; Rivitti, M.C.M.; Bouladour, H.; Galle, P.

1991-01-01

Gallium 67 imaging was used in 12 patients with documented Hansen's disease undergoing treatment or not in an attempt to determine the pattern of the disease. Diagnosis was confirmed by histopathology in all patients. The Mitsuda reaction was seen in all patients. Specific nuclear studies were performed when needed to evaluate particular organs better. Gallium 67 images show homogeneous, diffuse and moderate accumulation over the entire skin surface (except for the face) of untreated patients with multibacillary disease. The face skin in these cases presented homogeneous, diffuse but very marked uptake of gallium. Internal organ involvement was variable. There was a very good correlation among clinical, scintigraphical, immunological and histopathological data. The pattern of the body skin ('skin outlining') and face skin ('beard distribution') may be distinct for untreated patients with multibacillary leprosy. (orig.)

Growth and etching characteristics of gallium oxide thin films by pulsed laser deposition

International Nuclear Information System (INIS)

Ou, Sin-Liang; Wuu, Dong-Sing; Fu, Yu-Chuan; Liu, Shu-Ping; Horng, Ray-Hua; Liu, Lei; Feng, Zhe-Chuan

2012-01-01

Highlights: ► The β-Ga2O3 thin films are prepared by pulsed laser deposition. ► The substrate temperature affects the structural, optical and etching properties of the grown films. ► The optical transmittance and band gap of the films increased with increasing the substrate temperature. ► The etching treatments for gallium oxide are performed in 49 mol% HF solution at room temperature. ► The gallium oxide thin film grown at 400 °C has the highest etching rate of 490 nm s −1 . - Abstract: The gallium oxide films were deposited on (0 0 1) sapphire at various substrate temperatures from 400 to 1000 °C by pulsed laser deposition using a KrF excimer laser. The etching treatments for as-grown gallium oxide were performed in a 49 mol% HF solution at room temperature. The structural, optical and etching properties of the grown films were investigated in terms of high resolution X-ray diffraction, optical transmittance, atomic force microscopy, and X-ray photoelectron spectroscopy. The phase transition from amorphous to polycrystalline β-Ga 2 O 3 structure was observed with increasing growth temperature. From the optical transmittance measurements, the films grown at 550–1000 °C exhibit a clear absorption edge at deep ultraviolet region around 250–275 nm wavelength. It was found that the optical band gap of gallium oxide films increased from 4.56 to 4.87 eV when the substrate temperature increased from 400 to 1000 °C. As the substrate temperature increases, the crystallinity of gallium oxide film is enhanced and the etching rate is decreased. The high etching rate of 490 nm s −1 for gallium oxide film grown at 400 °C could be due to its amorphous phase, which is referred to higher void ratio and looser atomic structure.

Phase transitions in solids under high pressure

CERN Document Server

Blank, Vladimir Davydovich

2013-01-01

Phase equilibria and kinetics of phase transformations under high pressureEquipment and methods for the study of phase transformations in solids at high pressuresPhase transformations of carbon and boron nitride at high pressure and deformation under pressurePhase transitions in Si and Ge at high pressure and deformation under pressurePolymorphic α-ω transformation in titanium, zirconium and zirconium-titanium alloys Phase transformations in iron and its alloys at high pressure Phase transformations in gallium and ceriumOn the possible polymorphic transformations in transition metals under pressurePressure-induced polymorphic transformations in АIBVII compoundsPhase transformations in AIIBVI and AIIIBV semiconductor compoundsEffect of pressure on the kinetics of phase transformations in iron alloysTransformations during deformation at high pressure Effects due to phase transformations at high pressureKinetics and hysteresis in high-temperature polymorphic transformations under pressureHysteresis and kineti...

Gallium-containing hydroxyapatite for potential use in orthopedics

International Nuclear Information System (INIS)

Melnikov, P.; Teixeira, A.R.; Malzac, A.; Coelho, M. de B.

2009-01-01

A novel material that may be recommended for grafts and implants stimulating bone growth has been obtained by introducing gallium ions (up to 11.0 mass%) into crystalline lattice of hydroxyapatite. The doping was carried out using gallium nitrate and sodium gallate solutions. In both cases, lattice parameters of gallium-doped hydroxyapatite are identical to those of pure synthetic hydroxyapatite. Gallium does not replace calcium as a result of heterovalent substitution and consequently produces no distortions in the framework of hydroxyapatite matrix. It remains strongly fixed in the form of solid solution of intercalation. According to scanning electron microscopy images gallium insertion does not cause any morphological alterations in hydroxyapatite structure and the product developed meets physico-chemical criteria for biomaterial to be employed in orthopedic practice and local handling of traumatic injuries. Its future usage opens the opportunity to enhance osteosynthesis and calcium retention in loco.

High field magnetic anisotropy in praseodymium gallium garnet at low temperatures

International Nuclear Information System (INIS)

Wang Wei; Yue Yuan; Liu Gongqiang

2011-01-01

Research highlights: → A detailed analysis of crystal field effect is presented, and a set of new crystal field parameters is given to study the magnetic behaviors of the paramagnetic praseodymium gallium garnet (PrGaG). → The contribution of the exchange interaction between the praseodymium ions to the magnetic properties of PrGaG is further explored. Meanwhile, some characteristics of exchange interaction are revealed. → With the consideration of crystal field and exchange interaction, the available experiments are successfully fitted by our theoretical model. → Our theory suggests that PrGaG is ferromagnetic ordering at low temperatures, and the exchange interaction is anisotropic. - Abstract: In this paper, with the consideration of crystal field and exchange interaction between the rare-earth Pr 3+ ions, the magnetic anisotropy in praseodymium gallium garnet (PrGaG) in high magnetic fields and at low temperatures is theoretically analyzed. A set of relatively suitable CF parameters is obtained by studying the influence of the variations of nine CF parameters on the magnetization. However, only taking crystal field effect into account, theoretical calculations indicate that the experiments cannot be excellently interpreted. Then, the exchange interaction between Pr 3+ ion, which can be described as an effective exchange field H v = vM = vχH e = ηH e , is further considered. On the other hand, by evaluating the variation of the parameter η with the magnetic fields, our theory implies that PrGaG exhibits ferrimagnetic ordering at low temperatures, and the exchange interaction in PrGaG displays obvious anisotropy. Also, the theoretical data show better agreements with the experimental results.

Gallium-67 scintigraphy in borderline lepromatous leprosy

International Nuclear Information System (INIS)

Mouratidis, B.; Lomas, F.E.

1993-01-01

A middle aged woman with a pyrexia of unknown origin was shown to have borderline lepromatous leprosy. Early gallium-67 scintigraphy demonstrated increased uptake in the subcutaneous tissues of the face and thighs. As a result of these findings skin biopsy was obtained from the right thigh which gave a diagnosis of borderline lepromatous leprosy. The authors have been unable to find other reports of gallium-67 scintigraphy in leprosy but the pattern of gallium-67 distribution should suggest the diagnosis. 5 refs., 1 fig

A 10kWatt 36GHz Solid-State Power Amplifier using GaN-on-Diamond, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — This Phase-I SBIR proposal proposes for the first time ever, the use of a new class of materials - Gallium Nitride-on-diamond - in the manufacture of very high...

GaN Nanowires Synthesized by Electroless Etching Method

KAUST Repository

Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

2012-01-01

Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

Ab initio calculations of the electronic and structural properties of beryllium-, magnesium- and calcium-nitrides

International Nuclear Information System (INIS)

Mokhtari, A.; Akbarzadeh, H.

2003-01-01

The electronic and structural properties of beryllium nitride (alpha and beta), magnesium- and calcium-nitrides were investigated using first principle full potential-linearized augmented plane wave method within density functional theory. We used Perdew and Wang-generalized gradient approximation, which is based on exchange correlation energy optimization, to calculate the total energy and the Engel-Vosko's GGA formalism, which optimize the corresponding potential, for band structure calculations. We also optimized internal parameters by relaxing the atomic positions in the force directions. Our results including lattice parameter, bulk modulus and it's pressure derivative, cohesive energy, band structure and density of states are compared with the experimental and other theoretical (Hartree-Fock approximation with a posteriori density functional correction) data

Failure mechanism analysis of a discrete 650V enhancement mode GaN-on-Si power device with reverse conduction accelerated power cycling test

DEFF Research Database (Denmark)

Song, Sungyoung; Munk-Nielsen, Stig; Uhrenfeldt, Christian

2017-01-01

A commercial discrete enhancement mode gallium nitride power component employing advanced package technology without conventional bond wire possesses the ability for bidirectional conduction. The gallium nitride power components can provide not only higher forward conductivity but also superior...... of cycles to failure. In physical failure analysis, delamination of a solder joint between a chip and a copper layer of an aluminum print circuit board is observed with a scanning acoustic microscope....

New Routes to Lanthanide and Actinide Nitrides

Energy Technology Data Exchange (ETDEWEB)

Butt, D.P.; Jaques, B.J.; Osterberg, D.D. [Boise State University, 1910 University Dr., Boise, Idaho 83725-2075 (United States); Marx, B.M. [Concurrent Technologies Corporation, Johnstown, PA (United States); Callahan, P.G. [Carnegie Mellon University, Pittsburgh, PA (United States); Hamdy, A.S. [Central Metallurgical R and D Institute, Helwan, Cairo (Egypt)

2009-06-15

The future of nuclear energy in the U.S. and its expansion worldwide depends greatly on our ability to reduce the levels of high level waste to minimal levels, while maintaining proliferation resistance. Implicit in the so-called advanced fuel cycle is the need for higher levels of fuel burn-up and consequential use of complex nuclear fuels comprised of fissile materials such as Pu, Am, Np, and Cm. Advanced nitride fuels comprised ternary and quaternary mixtures of uranium and these actinides have been considered for applications in advanced power plants, but there remain many processing challenges as well as necessary qualification testing. In this presentation, the advantages and disadvantages of nitride fuels are discussed. Methods of synthesizing the raw materials and sintering of fuels are described including a discussion of novel, low cost routes to nitrides that have the potential for reducing the cost and footprint of a fuel processing plant. Phase pure nitrides were synthesized via four primary methods; reactive milling metal flakes in nitrogen at room temperature, directly nitriding metal flakes in a pure nitrogen atmosphere, hydriding metal flakes prior to nitridation, and carbo-thermically reducing the metal oxide and carbon mixture prior to nitridation. In the present study, the sintering of UN, DyN, and their solid solutions (U{sub x}, Dy{sub 1-x}) (x = 1 to 0.7) were also studied. (authors)

GaN-Ready Aluminum Nitride Substrates for Cost-Effective, Very Low Dislocation Density III-Nitride LEDs

International Nuclear Information System (INIS)

Schujman, Sandra; Schowalter, Leo

2011-01-01

The objective of this project was to develop and then demonstrate the efficacy of a cost effective approach for a low defect density substrate on which AlInGaN LEDs can be fabricated. The efficacy of this 'GaN-ready' substrate would then be tested by growing high efficiency, long lifetime InxGa1-xN blue LEDs. The approach used to meet the project objectives was to start with low dislocation density AlN single-crystal substrates and grow graded Al x Ga 1-x N layers on top. Pseudomorphic Al x Ga 1-x N epitaxial layers grown on bulk AlN substrates were used to fabricate light emitting diodes and demonstrate better device performance as a result of the low defect density in these layers when benched marked against state-of-the-art LEDs fabricated on sapphire substrates. The pseudomorphic LEDs showed excellent output powers compared to similar wavelength devices grown on sapphire substrates, with lifetimes exceeding 10,000 hours (which was the longest time that could reliably be estimated). In addition, high internal quantum efficiencies were demonstrated at high driving current densities even though the external quantum efficiencies were low due to poor photon extraction. Unfortunately, these pseudomorphic LEDs require high Al content so they emit in the ultraviolet. Sapphire based LEDs typically have threading dislocation densities (TDD) > 10 8 cm -2 while the pseudomorphic LEDs have TDD (le) 10 5 cm -2 . The resulting TDD, when grading the Al x Ga 1-x N layer all the way to pure GaN to produce a 'GaN-ready' substrate, has varied between the mid 10 8 down to the 10 6 cm -2 . These inconsistencies are not well understood. Finally, an approach to improve the LED structures on AlN substrates for light extraction efficiency was developed by thinning and roughening the substrate.

Adsorption modes of molecular iodine on defected boron nitrides: A DFT study

Science.gov (United States)

Arabieh, Masoud; Azar, Yavar Taghipour

2018-03-01

The interaction of molecular iodine with pristine and monovacant boron-nitride quantum dots (QDs) have been investigated using density functional theory. It was found that removing one B or N single atom significantly decreased the calculated Eg values at various exchange functional. In B-defected BN system, the localized spin densities canceled each other and overall polarization of system was found to be equal to unity. For N-defected system there was smaller spin densities localized on each closest B atoms. Both B- and N-vacancies caused appearance of new states in gap region. Our calculation revealed that spin density and polarization of defected system are localized on vacancy region and other atoms did not take part in this polarization. The results of electron localization function for N-DBN showed there was high density region at the position of removed nitrogen atom. The calculated adsorption energies implied that there was no significant chemical interaction between iodine molecule and pristine BN sheet. We suggested that when a deficiency was imposed to the BN sheet, the reactivity of the modified system toward iodine molecule significantly could increase. We found strong interaction between iodine and nitrogen atoms of B-DBN system. In the case of I2/N-DBN system the neighbor atoms had no contribution in spin polarization of the system and it seemed that all spin density of system transferred to the iodine molecule after adsorption. Strong correlation between molecular iodine orientation and BN-QDs via their interactions type has been clarified in this work. These findings may provide a deeper insight into halogen molecules interactions with low dimensional defected boron nitrides.

Graphitic carbon nitride nanosheet electrode-based high-performance ionic actuator

Science.gov (United States)

Wu, Guan; Hu, Ying; Liu, Yang; Zhao, Jingjing; Chen, Xueli; Whoehling, Vincent; Plesse, Cédric; Nguyen, Giao T. M.; Vidal, Frédéric; Chen, Wei

2015-01-01

Ionic actuators have attracted attention due to their remarkably large strain under low-voltage stimulation. Because actuation performance is mainly dominated by the electrochemical and electromechanical processes of the electrode layer, the electrode material and structure are crucial. Here, we report a graphitic carbon nitride nanosheet electrode-based ionic actuator that displays high electrochemical activity and electromechanical conversion abilities, including large specific capacitance (259.4 F g−1) with ionic liquid as the electrolyte, fast actuation response (0.5±0.03% in 300 ms), large electromechanical strain (0.93±0.03%) and high actuation stability (100,000 cycles) under 3 V. The key to the high performance lies in the hierarchical pore structure with dominant size actuation performance. PMID:26028354

Communication: Water on hexagonal boron nitride from diffusion Monte Carlo

Energy Technology Data Exchange (ETDEWEB)

Al-Hamdani, Yasmine S.; Ma, Ming; Michaelides, Angelos, E-mail: angelos.michaelides@ucl.ac.uk [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ (United Kingdom); Alfè, Dario [Thomas Young Centre and London Centre for Nanotechnology, 17–19 Gordon Street, London WC1H 0AH (United Kingdom); Department of Earth Sciences, University College London, Gower Street, London WC1E 6BT (United Kingdom); Lilienfeld, O. Anatole von [Institute of Physical Chemistry and National Center for Computational Design and Discovery of Novel Materials, Department of Chemistry, University of Basel, Klingelbergstrasse 80, CH-4056 Basel (Switzerland); Argonne Leadership Computing Facility, Argonne National Laboratories, 9700 S. Cass Avenue Argonne, Lemont, Illinois 60439 (United States)

2015-05-14

Despite a recent flurry of experimental and simulation studies, an accurate estimate of the interaction strength of water molecules with hexagonal boron nitride is lacking. Here, we report quantum Monte Carlo results for the adsorption of a water monomer on a periodic hexagonal boron nitride sheet, which yield a water monomer interaction energy of −84 ± 5 meV. We use the results to evaluate the performance of several widely used density functional theory (DFT) exchange correlation functionals and find that they all deviate substantially. Differences in interaction energies between different adsorption sites are however better reproduced by DFT.

Gallium 67 uptake in thymic rebound

International Nuclear Information System (INIS)

Hurst, R.; Sabio, H.; Teates, C.D.

1988-01-01

We have reported a case of localized thymic enlargement and uptake of gallium 67 in a child who had received antineoplastic chemotherapy. The enlarged thymus showed normal histology, a picture consistent with thymic rebound after nonspecific stress. This case further demonstrates the need to consider thymic rebound as a cause of gallium 67 uptake in children with neoplastic diseases

Compatibility of ITER candidate structural materials with static gallium

International Nuclear Information System (INIS)

Luebbers, P.R.; Michaud, W.F.; Chopra, O.K.

1993-12-01

Tests were conducted on the compatibility of gallium with candidate structural materials for the International Thermonuclear Experimental Reactor, e.g., Type 316 SS, Inconel 625, and Nb-5 Mo-1 Zr alloy, as well as Armco iron, Nickel 270, and pure chromium. Type 316 stainless steel is least resistant to corrosion in static gallium and Nb-5 Mo-1 Zr alloy is most resistant. At 400 degrees C, corrosion rates are ∼4.0, 0.5, and 0.03 mm/yr for type 316 SS, Inconel 625, and Nb-5 Mo- 1 Zr alloy, respectively. The pure metals react rapidly with gallium. In contrast to findings in earlier studies, pure iron shows greater corrosion than nickel. The corrosion rates at 400 degrees C are ≥88 and 18 mm/yr, respectively, for Armco iron and Nickel 270. The results indicate that at temperatures up to 400 degrees C, corrosion occurs primarily by dissolution and is accompanied by formation of metal/gallium intermetallic compounds. The solubility data for pure metals and oxygen in gallium are reviewed. The physical, chemical, and radioactive properties of gallium are also presented. The supply and availability of gallium, as well as price predictions through the year 2020, are summarized

Synthesis and characterization of group V metal carbide and nitride catalysts

Science.gov (United States)

Kwon, Heock-Hoi

1998-11-01

Group V transition metal carbides and nitrides were prepared via the temperature programmed reaction (TPR) of corresponding oxides with NHsb3 or a CHsb4/Hsb2 mixture. Except for the tantalum compounds, phase-pure carbides and nitrides were prepared. The vanadium carbides and nitrides were the most active and selective catalysts. Therefore the principal focus of the research was the preparation, characterization, and evaluation of high surface area vanadium nitride catalysts. A series of vanadium nitrides with surface areas up to 60 msp2/g was prepared. Thermal gravimetric analysis coupled with x-ray diffraction and scanning electron microscopy indicated that the solid-state reaction proceeded by the sequential reduction of Vsb2Osb5 to VOsb{0.9} and concluded with the topotactic substitution of nitrogen for oxygen in VOsb{0.9}. The transformation of Vsb2Osb5 to VN was pseudomorphic. An experimental design was executed to determine effects of the heating rates and space velocities on the VN microstructures. The heating rates had minor effects on the surface areas and pore size distributions; however, increasing the space velocity significantly increased the surface area. The materials were mostly mesoporous. Oxygen chemisorption on the vanadium nitrides scaled linearly with the surface area. The corresponding O/Vsbsurface ratio was ≈0.6. The vanadium nitrides were active for butane activation and pyridine hydrodenitrogenation. During butane activation, their selectivities towards dehydrogenation products were as high as 98%. The major product in pyridine hydrodenitrogenation was pentane. The reaction rates increased almost linearly with the surface area suggesting that these reactions were structure insensitive. The vanadium nitrides were not active for crotonaldehyde hydrogenation; however, they catalyzed an interesting ring formation reaction that produced methylbenzaldehyde and xylene from crotonaldehyde. A new method was demonstrated for the production of very

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

Science.gov (United States)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

Electrochemical behavior of rare earth metals and their nitrides

International Nuclear Information System (INIS)

Ito, Yasuhiko; Goto, Takuya

2004-01-01

Pyrometallurgical recycle process using molten salts is considered to be a high potential in pyro-reprocess technologies for spent nitride fuels, and it is important to understand chemical and electro-chemical behavior of nitrides and metals in molten salts. In this study, cadmium nitrates deposited on the anode Cd plate in motlen salt (LiCl-KCl) with addition of Li 3 N are examined. The cadmium nitrates deposited have various compositions corresponding to polarization potentials and then, the relationship between the deposition potential of nitride Cd and their composition is cleared. Their standard chemical potential of CdN is estimated from electrochemical measurement. And then, potential-pH 3- diagram is drawn by voltametry examination of nitride resolution behavior with using thermochemical data of nitrides. (A. Hishinuma)

First principles calculations of interstitial and lamellar rhenium nitrides

Energy Technology Data Exchange (ETDEWEB)

Soto, G., E-mail: gerardo@cnyn.unam.mx [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico); Tiznado, H.; Reyes, A.; Cruz, W. de la [Universidad Nacional Autonoma de Mexico, Centro de Nanociencias y Nanotecnologia, Km 107 Carretera Tijuana-Ensenada, Ensenada Baja California (Mexico)

2012-02-15

Highlights: Black-Right-Pointing-Pointer The possible structures of rhenium nitride as a function of composition are analyzed. Black-Right-Pointing-Pointer The alloying energy is favorable for rhenium nitride in lamellar arrangements. Black-Right-Pointing-Pointer The structures produced by magnetron sputtering are metastable variations. Black-Right-Pointing-Pointer The structures produced by high-pressure high-temperature are stable configurations. Black-Right-Pointing-Pointer The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re{sub 3}N and Re{sub 2}N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials

First principles calculations of interstitial and lamellar rhenium nitrides

International Nuclear Information System (INIS)

Soto, G.; Tiznado, H.; Reyes, A.; Cruz, W. de la

2012-01-01

Highlights: ► The possible structures of rhenium nitride as a function of composition are analyzed. ► The alloying energy is favorable for rhenium nitride in lamellar arrangements. ► The structures produced by magnetron sputtering are metastable variations. ► The structures produced by high-pressure high-temperature are stable configurations. ► The lamellar structures are a new category of interstitial dissolutions. - Abstract: We report here a systematic first principles study of two classes of variable-composition rhenium nitride: i, interstitial rhenium nitride as a solid solution and ii, rhenium nitride in lamellar structures. The compounds in class i are cubic and hexagonal close-packed rhenium phases, with nitrogen in the octahedral and tetrahedral interstices of the metal, and they are formed without changes to the structure, except for slight distortions of the unit cells. In the compounds in class ii, by contrast, the nitrogen inclusion provokes stacking faults in the parent metal structure. These faults create trigonal-prismatic sites where the nitrogen residence is energetically favored. This second class of compounds produces lamellar structures, where the nitrogen lamellas are inserted among multiple rhenium layers. The Re 3 N and Re 2 N phases produced recently by high-temperature and high-pressure synthesis belong to this class. The ratio of the nitrogen layers to the rhenium layers is given by the composition. While the first principle calculations point to higher stability for the lamellar structures as opposed to the interstitial phases, the experimental evidence presented here demonstrates that the interstitial classes are synthesizable by plasma methods. We conclude that rhenium nitrides possess polymorphism and that the two-dimensional lamellar structures might represent an emerging class of materials within binary nitride chemistry.

single-walled boron nitride nanotube for use as biosensor or in

Indian Academy of Sciences (India)

Vitamin C; vitamin B3; density functional theory; boron nitride nanotube (BNNT). 1. Introduction ... and disadvantages of functionalizations of BNNTs for increasing their ... a protein that gives structure to bones, cartilage, muscle and blood ...

Application of extraction of gallium molybdotungstate HPA for their investigation in solutions and gallium determination

International Nuclear Information System (INIS)

Kol'tsova, E.G.; Vakulich, A.N.; Tsyganok, L.P.

2001-01-01

Extraction of gallium molybdotungstate heteropolyacids and their associates with a row of triphenylmethane dyes, use of extraction for study of complexing in Mo 6 -W 6 -Ga 3+ -H 3 O + system are investigated. Research of optimal analytical states and development of extraction spectrophotometric methods of gallium determination are done. It is shown that increase of Mo 6 part in heteropolyanion improves solvation interaction of heteropolyacids with organic solvents elevating extraction properties of polyanion [ru

Fabrication of vanadium nitride by carbothermal nitridation reaction

International Nuclear Information System (INIS)

Wang Xitang; Wang Zhuofu; Zhang Baoguo; Deng Chengji

2005-01-01

Vanadium nitride is produced from V 2 O 5 by carbon-thermal reduction and nitridation. When the sintered temperature is above 1273 K, VN can be formed, and the nitrogen content of the products increased with the firing temperature raised, and then is the largest when the sintered temperature is 1573 K. The C/V 2 O 5 mass ratio of the green samples is the other key factor affecting on the nitrogen contents of the products. The nitrogen content of the products reaches the most when the C/V 2 O 5 mass ratio is 0.33, which is the theoretical ratio of the carbothermal nitridation of V 2 O 5 . (orig.)

Preparation and characteristics of various rare earth nitrides

International Nuclear Information System (INIS)

Imamura, H.; Imahashi, T.; Zaimi, M.; Sakata, Y.

2008-01-01

Active nanocrystalline nitrides of EuN and YbN with high surface areas were successfully prepared by the thermal decomposition of the rare earth amides (Eu(NH 2 ) 2 , Yb(NH 2 ) 2 and Yb(NH 2 ) 3 ). For the preparation of CeN, PrN and NdN, the direct reaction of the rare earth metals with ammonia was extensively studied to determine optimal conditions. In the reaction of rare earth metals with ammonia, hydrides besides the nitrides were competitively formed. The reaction conditions such as temperatures and ratios of ammonia to rare earth metal were crucial in preferential formation of nitride. The nanocrystalline YbN and EuN readily absorbed large amounts of ammonia even at room temperature upon contact with ammonia (13.3 kPa). The absorbed ammonia existed in at least two forms on/in the nitride; the one was surface-adsorbed ammonia and the other ammonia absorbed in the nitride in a decomposed state. The properties of ammonia absorbed by the nitride were further evaluated by temperature-programmed desorption (TPD), FT-IR and XRD techniques

Gallium Nitride: A Nano scale Study using Electron Microscopy and Associated Techniques

International Nuclear Information System (INIS)

Mohammed Benaissa; Vennegues, Philippe

2008-01-01

A complete nano scale study on GaN thin films doped with Mg. This study was carried out using TEM and associated techniques such as HREM, CBED, EDX and EELS. It was found that the presence of triangular defects (of few nanometers in size) within GaN:Mg films were at the origin of unexpected electrical and optical behaviors, such as a decrease in the free hole density at high Mg doping. It is shown that these defects are inversion domains limited with inversion-domains boundaries. (author)

Gallium Safety in the Laboratory

International Nuclear Information System (INIS)

Cadwallader, L.C.

2003-01-01

A university laboratory experiment for the US Department of Energy magnetic fusion research program required a simulant for liquid lithium. The simulant choices were narrowed to liquid gallium and galinstan (Ga-In-Sn) alloy. Safety information on liquid gallium and galinstan were compiled, and the choice was made to use galinstan. A laboratory safety walkthrough was performed in the fall of 2002 to support the galinstan experiment. The experiment has been operating successfully since early 2002

Electronic Biosensors Based on III-Nitride Semiconductors.

Science.gov (United States)

Kirste, Ronny; Rohrbaugh, Nathaniel; Bryan, Isaac; Bryan, Zachary; Collazo, Ramon; Ivanisevic, Albena

2015-01-01

We review recent advances of AlGaN/GaN high-electron-mobility transistor (HEMT)-based electronic biosensors. We discuss properties and fabrication of III-nitride-based biosensors. Because of their superior biocompatibility and aqueous stability, GaN-based devices are ready to be implemented as next-generation biosensors. We review surface properties, cleaning, and passivation as well as different pathways toward functionalization, and critically analyze III-nitride-based biosensors demonstrated in the literature, including those detecting DNA, bacteria, cancer antibodies, and toxins. We also discuss the high potential of these biosensors for monitoring living cardiac, fibroblast, and nerve cells. Finally, we report on current developments of covalent chemical functionalization of III-nitride devices. Our review concludes with a short outlook on future challenges and projected implementation directions of GaN-based HEMT biosensors.

Formation of Ti-N graded bioceramic layer by DC hollow-cathode plasma nitriding

Institute of Scientific and Technical Information of China (English)

ZHENG Chuan-lin

2004-01-01

Ti-N graded ceramic layer was formed on titanium by using DC hollow-cathode plasma nitriding technique. The structure of Ti-N layer was analyzed using X-ray diffractometry(XRD) with Cu Kα radiation, and the microhardness( HV0.1) was measured from the surface to inner along the cross section of Ti-N layer. The results indicate that the Ti-N graded layer is composed of ε-Ti2 N, δ-TiN and α-Ti(N) phases. Mechanism discussion shows that hollow-cathode discharge can intensify gas ionization, increase current density and enhance the nitriding potential, which directly increases the thickness of the diffusion coatings compared with traditional nitriding methods.

Heterostructures for Increased Quantum Efficiency in Nitride LEDs

Energy Technology Data Exchange (ETDEWEB)

Davis, Robert F. [Carnegie Mellon Univ., Pittsburgh, PA (United States)

2010-09-30

Task 1. Development of an advanced LED simulator useful for the design of efficient nitride-based devices. Simulator will contain graphical interface software that can be used to specify the device structure, the material parameters, the operating conditions and the desired output results. Task 2. Theoretical and experimental investigations regarding the influence on the microstructure, defect concentration, mechanical stress and strain and IQE of controlled changes in the chemistry and process route of deposition of the buffer layer underlying the active region of nitride-based blue- and greenemitting LEDs. Task 3. Theoretical and experimental investigations regarding the influence on the physical properties including polarization and IQE of controlled changes in the geometry, chemistry, defect density, and microstructure of components in the active region of nitride-based blue- and green-emitting LEDs. Task 4. Theoretical and experimental investigations regarding the influence on IQE of novel heterostructure designs to funnel carriers into the active region for enhanced recombination efficiency and elimination of diffusion beyond this region. Task 5. Theoretical and experimental investigations regarding the influence of enhanced p-type doping on the chemical, electrical, and microstructural characteristics of the acceptor-doped layers, the hole injection levels at Ohmic contacts, the specific contact resistivity and the IQE of nitride-based blue- and green-emitting LEDs. Development and optical and electrical characterization of reflective Ohmic contacts to n- and p-type GaN films.

Luminescence Studies of Ion-Implanted Gallium Nitride and Aluminum Gallium Nitride

Science.gov (United States)

2003-03-01

58: 1306 (1995). 15. Moxom, Jeremy. “Characterization of Mg doped GaN by positron annihilation spectroscopy .” Journal of Applied Physics, 92... semiconductors such as GaN and AlxGa1-xN became very popular for their applications on various devices. Therefore comprehensive and systematic luminescence...short wavelength optoelectronic applications that are beyond the range of present semiconductor devices. The AlGaN and GaN materials have these

High-density plasma etching characteristics of indium-gallium-zinc oxide thin films in CF4/Ar plasma

International Nuclear Information System (INIS)

Joo, Young-Hee; Kim, Chang-Il

2015-01-01

We investigated the etching process of indium-gallium-zinc oxide (IGZO) thin films in an inductively coupled plasma system. The dry etching characteristics of the IGZO thin films were studied by varying the CF 4 /Ar gas mixing ratio, RF power, DC-bias voltage, and process pressure. We determined the following optimized process conditions: an RF power of 700 W, a DC-bias voltage of − 150 V, and a process pressure of 2 Pa. A maximum etch rate of 25.63 nm/min for the IGZO thin films was achieved in a plasma with CF 4 /Ar(= 25:75), and the selectivity of IGZO to Al and TiN was found to be 1.3 and 0.7, respectively. We determined the ionic composition of the CF 4 /Ar plasma using optical emission spectroscopy. Analysis of chemical reactions at the IGZO thin film surfaces was performed using X-ray photoelectron spectroscopy. - Highlights: • IGZO thin film was etched by CF 4 /Ar plasma as a function of gas mixing ratio. • IGZO bonds were broken Ar + sputtering and then reacted with the C-F x radicals. • The physical sputtering is dominant in etch control compared with chemical etching

Inflammatory pseudotumor: A gallium-avid mobile mesenteric mass

International Nuclear Information System (INIS)

Auringer, S.T.; Scott, M.D.; Sumner, T.E.

1991-01-01

An 8-yr-old boy with a 1-mo history of culture-negative fever and anemia underwent gallium, ultrasound, and computed tomography studies as part of the evaluation of a fever of unknown origin. These studies revealed a mobile gallium-avid solid abdominal mass subsequently proven to be an inflammatory pseudotumor of the mesentery, a rare benign mass. This report documents the gallium-avid nature of this rare lesion and discusses associated characteristic clinical, pathologic, and radiographic features

Ab initio calculations of the electronic and structural properties of beryllium-, magnesium- and calcium-nitrides

Energy Technology Data Exchange (ETDEWEB)

Mokhtari, A.; Akbarzadeh, H

2003-09-01

The electronic and structural properties of beryllium nitride (alpha and beta), magnesium- and calcium-nitrides were investigated using first principle full potential-linearized augmented plane wave method within density functional theory. We used Perdew and Wang-generalized gradient approximation, which is based on exchange correlation energy optimization, to calculate the total energy and the Engel-Vosko's GGA formalism, which optimize the corresponding potential, for band structure calculations. We also optimized internal parameters by relaxing the atomic positions in the force directions. Our results including lattice parameter, bulk modulus and it's pressure derivative, cohesive energy, band structure and density of states are compared with the experimental and other theoretical (Hartree-Fock approximation with a posteriori density functional correction) data.

Simple process to fabricate nitride alloy powders

International Nuclear Information System (INIS)

Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

2013-01-01

Uranium mono-nitride (UN) is considered as a fuel material [1] for accident-tolerant fuel to compensate for the loss of fissile fuel material caused by adopting a thickened cladding such as SiC composites. Uranium nitride powders can be fabricated by a carbothermic reduction of the oxide powders, or the nitriding of metal uranium. Among them, a direct nitriding process of metal is more attractive because it has advantages in the mass production of high-purity powders and the reusing of expensive 15 N 2 gas. However, since metal uranium is usually fabricated in the form of bulk ingots, it has a drawback in the fabrication of fine powders. The Korea Atomic Energy Research Institute (KAERI) has a centrifugal atomisation technique to fabricate uranium and uranium alloy powders. In this study, a simple reaction method was tested to fabricate nitride fuel powders directly from uranium metal alloy powders. Spherical powder and flake of uranium metal alloys were fabricated using a centrifugal atomisation method. The nitride powders were obtained by thermal treating the metal particles under nitrogen containing gas. The phase and morphology evolutions of powders were investigated during the nitriding process. A phase analysis of nitride powders was also part of the present work. KAERI has developed the centrifugal rotating disk atomisation process to fabricate spherical uranium metal alloy powders which are used as advanced fuel materials for research reactors. The rotating disk atomisation system involves the tasks of melting, atomising, and collecting. A nozzle in the bottom of melting crucible introduces melt at the center of a spinning disk. The centrifugal force carries the melt to the edge of the disk and throws the melt off the edge. Size and shape of droplets can be controlled by changing the nozzle size, the disk diameter and disk speed independently or simultaneously. By adjusting the processing parameters of the centrifugal atomiser, a spherical and flake shape

Determination of gallium in flint clay by neutron activation analysis

International Nuclear Information System (INIS)

Padova, A.; Even, O.

1975-01-01

Neutron activation analysis was applied to determine gallium traces in different flint clay samples found in Israel. The principal 835 KeV gamma ray of gallium-72 was measured with a 60 cm 2 Ge(Li) spectrometer in conjunction with a Packard 4000 channel analyzer and Wang table computer, model 720 C. Samples were weighed into polyethylene vials, sealed and inserted into polyethylene rabbit. Gallium metal and gallium oxide used as standards were similarly prepared for irradiation for 10 minutes in the I.R.R.I., at a thermal flux of 3.5x10 12 n/cm 2 sec. Careful calibration of the spectrometer and judicious choice of cooling time eliminate the influence of such elements as europium-152, and sodium-24 and make possible the determination of gallium without prior chemical separation. Representative Israel flint clay samples contain about 55 ppm gallium. (B.G.)

Preparation of phosphorus targets using the compound phosphorus nitride

International Nuclear Information System (INIS)

Maier-Komor, P.

1987-01-01

Commercially available phosphorus nitride (P 3 N 5 ) shows a high oxygen content. Nevertheless, this material is attractive for use as phosphorus targets in experiments where red phosphorus would disappear due to its high vapor pressure and where a metal partner in the phosphide must be excluded due to its high atomic number. Methods are described to produce phosphorus nitride targets by vacuum evaporation condensation. (orig.)

Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

Science.gov (United States)

Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

2016-04-26

An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

Optical characteristics of a gallium laser plasma

International Nuclear Information System (INIS)

Shuaibov, A.K.; Shimon, L.L.; Dashchenko, A.I.; Shevera, I.V.; Chuchman, M.P.

2001-01-01

Results are presented from studies of the emission from an erosion gallium laser plasma at a moderate intensity (W = (1-5) x 10 8 W/cm 2 ) of a 1.06-μm laser radiation. It is shown that, under these conditions, the lower excited states of gallium atoms are populated most efficiently. Among the ions, only the most intense GaII lines are observed in the emission spectrum. The populations of GaI and GaII excited states are not related to direct electron excitation, but are determined by the recombination of gallium ions with slow electrons. The recombination times of GaIII and GaII ions in the core of the plasma jet are determined from the waveforms of emission in the GaII and GaI spectral lines and are equal to 10 and 140 ns, respectively. The results obtained are of interest for spectroscopic diagnostics of an erosion plasma produced from gallium-containing layered crystals during the laser deposition of thin films

Recombination and photosensitivity centres in boron nitride irradiated with ions

International Nuclear Information System (INIS)

Kabyshev, A.; Konusov, F.; Lopatin, V.

2001-01-01

The physical-chemical processes, taking place during the irradiation of dielectrics with ions distort the electron structure of the compounds and generate additional localise state in the forbidden zone (FZ). Consequently, the semiconductor layer with the specific surface density of σ ≥ 10 -10 S/ forms on the surface of the dielectric. In addition to his, the high concentration of the radiation-induced defects changes the optical and photoelectric properties of the materials and also the energy characteristics. Analysis of the photoelectric properties indicates that the recombination processes take part in electric transport. These processes restricted the increase of the photosensitivity and changing the kinetics of relaxation of photo conductivity (σ hv ). The practical application of the boron nitride (BN) the in the thermonuclear systems (for example, Ref. 7), stimulates research into the reasons for the deceleration of its properties under the effect of radiation of various types. The conductivity of non-irradiated boron nitride is of the electron-hole nature with a large fraction of the activation component in exchange of the charge carriers between the levels of the defects and the forbidden zones. On the basis of the correlation of the energy and kinetic parameters of luminescence and , the authors of Ref. 8 constructed a model of electron transfers accompanying the electric transport of the boron nitride. In addition to ion-thermal modification, the conductivity of boron nitride is also of the electron-hole nature and is accompanied by luminescence. Examination of the characteristics of luminescence may be useful for obtaining more information on the transport mechanism. In this work, in order to clarify the main parameters of the forbidden band, detailed investigations were carried out into the spectrum of the electronic states of radiation defects which determine the photoelectric and luminescence properties of the modified boron nitride. The

Computer-assisted sequential quantitative analysis of gallium scans in pulmonary sarcoidosis

International Nuclear Information System (INIS)

Rohatgi, P.K.; Bates, H.R.; Noss, R.W.

1985-01-01

Fifty-one sequential gallium citrate scans were performed in 22 patients with biopsy-proven sarcoidosis. A computer-assisted quantitative analysis of these scans was performed to obtain a gallium score. The changes in gallium score were correlated with changes in serum angiotensin converting enzyme (SACE) activity and objective changes in clinical status. There was a good concordance between changes in gallium score, SACE activity and clinical assessment in patients with sarcoidosis, and changes in gallium index were slightly superior to SACE index in assessing activity of sarcoidosis. (author)

Formation of aluminium nitride and segregation of Cu impurity atoms in aluminium implanted by high dose nitrogen ions

International Nuclear Information System (INIS)

Lin Chenglu; Hemment, P.L.F.; Li Jinhua; Zou Shichang

1994-01-01

Aluminium films with a thickness of 7000 A (containing 0.85% copper) were deposited on silicon substrates. 400 keV N 2 + or 350 keV N + ions were implanted into the aluminium films or at the interface between the aluminium and silicon, respectively. Automatic spreading resistance (ASR), Fourier transform infrared spectroscopy (FTIR) and Rutherford backscattering (RBS) and channelling were used to characterize the formation of aluminium nitride and the depth distribution of the Cu impurity in the aluminium films after ion implantation and post-annealing. The formation of a stoichiometric AlN layer with high resistance was evident from ASR, RBS analysis and FTIR measurements by the presence of the absorption band at 650 cm -1 . When the implanted nitrogen is near the interface between the aluminium and silicon, a multilayer structure can be obtained, which consists of aluminium, aluminium nitride and the silicon substrate. Cu, which is a background impurity in the deposited aluminium films, segregated into the synthesised aluminium nitride during high dose nitrogen ion implantation. This is due to irradiation-induced segregation during ion implantation. (orig.)

David Adler Lectureship Award in the Field of Materials Physics Talk: Novel Nitride and Oxide Electronics

Science.gov (United States)

Pearton, Stephen

2011-03-01

Recent progress in development of GaN-based transistors for gas and bio-sensing applications and amorphous IGZO layers for use thin film transistors (TFTs)on flexible substrates, including paper,will be presented. For the detection of gases such as hydrogen, the gateless GaN transistors are typically coated with a catalyst metal such as Pd or Pt to increase the detection sensitivity at room temperature. Functionalizing the surface with oxides, polymers and nitrides is also useful in enhancing the detection sensitivity for gases and ionic solutions.The use of enzymes or adsorbed antibody layers on the semiconductor surface leads to highly specific detection of a broad range of antigens of interest in the medical and security fields. We give examples of recent work showing sensitive detection of glucose, lactic acid, prostate cancer and breast cancer markers and the integration of the sensors with wireless data transmission systems to achieve robust, portable sensors. The amorphous transparent conducting oxide InZnGaO4 (IGZO) is attracting attention because of its high electron mobility (10-50 cm2.V-1.sec-1), high transparency in the visible region of the spectrum and its ability to be deposited with a wide range of conductivities.This raises the possibility of making low-cost electronics on a very wide range of arbitrary surfaces, including paper and plastics. N-type oxides such as zinc oxide, zinc tin oxide, indium gallium oxide, and indium gallium zinc tin oxide (IGZO) exhibit surprisingly high carrier mobilities even for amorphous films deposited at 300K. This has been explained by the fact that the conduction in these materials is predominantly through non-directional s orbitals which are less affected by disorder than the directional sp3 orbitals which control electron transport in Si. Examples of progress and discussion of remaining obstacles to use of IGZO TFTs will be presented Work performed in collaboration with Fan Ren.

Analysis of Proton Radiation Effects on Gallium Nitride High Electron Mobility Transistors

Science.gov (United States)

2017-03-01

non - ionizing proton radiation damage effects at different energy levels on a GaN-on-silicon high electron mobility transistor...DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) In this work, a physics-based simulation of non - ionizing proton radiation damage effects at different...Polarization . . . . . . . . . . . . . . 6 2.3 Non - Ionizing Radiation Damage Effects . . . . . . . . . . . . . . . 10 2.4 Non - Ionizing Radiation Damage in

Gallium-67 uptake by the thyroid associated with progressive systemic sclerosis

International Nuclear Information System (INIS)

Sjoberg, R.J.; Blue, P.W.; Kidd, G.S.

1989-01-01

Although thyroidal uptake of gallium-67 has been described in several thyroid disorders, gallium-67 scanning is not commonly used in the evaluation of thyroid disease. Thyroidal gallium-67 uptake has been reported to occur frequently with subacute thyroiditis, anaplastic thyroid carcinoma, and thyroid lymphoma, and occasionally with Hashimoto's thyroiditis and follicular thyroid carcinoma. A patient is described with progressive systemic sclerosis who, while being scanned for possible active pulmonary involvement, was found incidentally to have abnormal gallium-67 uptake only in the thyroid gland. Fine needle aspiration cytology of the thyroid revealed Hashimoto's thyroiditis. Although Hashimoto's thyroiditis occurs with increased frequency in patients with progressive systemic sclerosis, thyroidal uptake of gallium-67 associated with progressive systemic sclerosis has not, to our knowledge, been previously described. Since aggressive thyroid malignancies frequently are imaged by gallium-67 scintigraphy, fine needle aspiration cytology of the thyroid often is essential in the evaluation of thyroidal gallium-67 uptake

Gallium-67 uptake by the thyroid associated with progressive systemic sclerosis

Energy Technology Data Exchange (ETDEWEB)

Sjoberg, R.J.; Blue, P.W.; Kidd, G.S.

1989-01-01

Although thyroidal uptake of gallium-67 has been described in several thyroid disorders, gallium-67 scanning is not commonly used in the evaluation of thyroid disease. Thyroidal gallium-67 uptake has been reported to occur frequently with subacute thyroiditis, anaplastic thyroid carcinoma, and thyroid lymphoma, and occasionally with Hashimoto's thyroiditis and follicular thyroid carcinoma. A patient is described with progressive systemic sclerosis who, while being scanned for possible active pulmonary involvement, was found incidentally to have abnormal gallium-67 uptake only in the thyroid gland. Fine needle aspiration cytology of the thyroid revealed Hashimoto's thyroiditis. Although Hashimoto's thyroiditis occurs with increased frequency in patients with progressive systemic sclerosis, thyroidal uptake of gallium-67 associated with progressive systemic sclerosis has not, to our knowledge, been previously described. Since aggressive thyroid malignancies frequently are imaged by gallium-67 scintigraphy, fine needle aspiration cytology of the thyroid often is essential in the evaluation of thyroidal gallium-67 uptake.

Nitriding behavior of Ni and Ni-based binary alloys

Energy Technology Data Exchange (ETDEWEB)

Fonovic, Matej

2015-01-15

Gaseous nitriding is a prominent thermochemical surface treatment process which can improve various properties of metallic materials such as mechanical, tribological and/or corrosion properties. This process is predominantly performed by applying NH{sub 3}+H{sub 2} containing gas atmospheres serving as the nitrogen donating medium at temperatures between 673 K and 873 K (400 C and 600 C). NH{sub 3} decomposes at the surface of the metallic specimen and nitrogen diffuses into the surface adjacent region of the specimen whereas hydrogen remains in the gas atmosphere. One of the most important parameters characterizing a gaseous nitriding process is the so-called nitriding potential (r{sub N}) which determines the chemical potential of nitrogen provided by the gas phase. The nitriding potential is defined as r{sub N} = p{sub NH{sub 3}}/p{sub H{sub 2}{sup 3/2}} where p{sub NH{sub 3}} and p{sub H{sub 2}} are the partial pressures of the NH{sub 3} and H{sub 2} in the nitriding atmosphere. In contrast with nitriding of α-Fe where the nitriding potential is usually in the range between 0.01 and 1 atm{sup -1/2}, nitriding of Ni and Ni-based alloys requires employing nitriding potentials higher than 100 atm{sup -1/2} and even up to ∞ (nitriding in pure NH{sub 3} atmosphere). This behavior is compatible with decreased thermodynamic stability of the 3d-metal nitrides with increasing atomic number. Depending on the nitriding conditions (temperature, nitriding potential and treatment time), different phases are formed at the surface of the Ni-based alloys. By applying very high nitriding potential, formation of hexagonal Ni{sub 3}N at the surface of the specimen (known as external nitriding) leads to the development of a compound layer, which may improve tribological properties. Underneath the Ni{sub 3}N compound layer, two possibilities exist: (i) alloying element precipitation within the nitrided zone (known as internal nitriding) and/or (ii) development of metastable and