Ultra-stretchable Interconnects for high-density stretchable electronics

NARCIS (Netherlands)

Shafqat, S.; Hoefnagels, J.P.M.; Savov, A.; Joshi, S.; Dekker, R.; Geers, M.G.D.

2017-01-01

The exciting field of stretchable electronics (SE) promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

Energy Technology Data Exchange (ETDEWEB)

Bajaj, Sanyam, E-mail: bajaj.10@osu.edu; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Reza, Shahed; Chumbes, Eduardo M. [Raytheon Integrated Defense Systems, Andover, Massachusetts 01810 (United States); Khurgin, Jacob [Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States); Rajan, Siddharth [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Department of Material Science and Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)

2015-10-12

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10{sup 7 }cm/s at a low sheet charge density of 7.8 × 10{sup 11 }cm{sup −2}. An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs.

Density-dependent electron transport and precise modeling of GaN high electron mobility transistors

International Nuclear Information System (INIS)

Bajaj, Sanyam; Shoron, Omor F.; Park, Pil Sung; Krishnamoorthy, Sriram; Akyol, Fatih; Hung, Ting-Hsiang; Reza, Shahed; Chumbes, Eduardo M.; Khurgin, Jacob; Rajan, Siddharth

2015-01-01

We report on the direct measurement of two-dimensional sheet charge density dependence of electron transport in AlGaN/GaN high electron mobility transistors (HEMTs). Pulsed IV measurements established increasing electron velocities with decreasing sheet charge densities, resulting in saturation velocity of 1.9 × 10 7  cm/s at a low sheet charge density of 7.8 × 10 11  cm −2 . An optical phonon emission-based electron velocity model for GaN is also presented. It accommodates stimulated longitudinal optical (LO) phonon emission which clamps the electron velocity with strong electron-phonon interaction and long LO phonon lifetime in GaN. A comparison with the measured density-dependent saturation velocity shows that it captures the dependence rather well. Finally, the experimental result is applied in TCAD-based device simulator to predict DC and small signal characteristics of a reported GaN HEMT. Good agreement between the simulated and reported experimental results validated the measurement presented in this report and established accurate modeling of GaN HEMTs

Acceleration of high charge density electron beams in the SLAC linac

International Nuclear Information System (INIS)

Sheppard, J.C.; Clendenin, J.E.; Jobe, R.K.; Lueth, V.G.; Millich, A.; Ross, M.C.; Seeman, J.T.; Stiening, R.F.

1984-01-01

The SLAC Linear Collider (SLC) will require both electron and positron beams of very high charge density and low emittance to be accelerated to about 50 GeV in the SLAC 3-km linac. The linac is in the process of being improved to meet this requirement. The program to accelerate an electron beam of high charge density through the first third of the SLC linac is described and the experimental results are discussed. 7 references, 5 figures

From the trajectory to the density memory

International Nuclear Information System (INIS)

Cakir, Rasit; Krokhin, Arkadii; Grigolini, Paolo

2007-01-01

In this paper we discuss the connection between trajectory and density memory. The first form of memory is a property of a stochastic trajectory, whose stationary correlation function shows that the fluctuation at a given time depends on the earlier fluctuations. The density memory is a property of a collection of trajectories, whose density time evolution is described by a time convoluted equation showing that the density time evolution depends on its past history. We show that the trajectory memory does not necessarily yields density memory, and that density memory might be compatible with the existence of abrupt jumps resetting to zero the system's memory. We focus our attention on a time-convoluted diffusion equation, when the memory kernel is an inverse power law with (i) negative and (ii) positive tail. In case (i) there exist both renewal trajectories and trajectories with memory, compatible with this equation. Case (ii), which has eluded so far a convincing interpretation in terms of trajectories, is shown to be compatible only with trajectory memory

Probing electron density across Ar{sup +} irradiation-induced self-organized TiO{sub 2−x} nanochannels for memory application

Energy Technology Data Exchange (ETDEWEB)

Barman, A.; Saini, C. P.; Ghosh, S. K.; Dhar, S.; Kanjilal, A., E-mail: aloke.kanjilal@snu.edu.in [Department of Physics, School of Natural Sciences, Shiv Nadar University, NH-91, Tehsil Dadri, Gautam Buddha Nagar, Uttar Pradesh 201314 (India); Sarkar, P. K.; Roy, A. [Department of Physics, National Institute of Technology, Silchar, Assam 788010 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India); Kanjilal, D. [Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi 110067 (India)

2016-06-13

The variation of electron density in TiO{sub 2−x} nanochannels, exhibiting resistive switching phenomenon, produced by Ar{sup +} ion-irradiation at the threshold fluence of 5 × 10{sup 16} ions/cm{sup 2} is demonstrated by X-ray reflectivity (XRR). The transmission electron microscopy reveals the formation of nanochannels, while the energy dispersive X-ray spectroscopy confirms Ti enrichment near the surface due to ion-irradiation, in consistent with the increase in electron density by XRR measurements. Such a variation in Ti concentration indicates the evolution of oxygen vacancies (OVs) along the TiO{sub 2−x} nanochannels, and thus paves the way to explain the operation and performance of the Pt/TiO{sub 2−x}/Pt-based memory devices via OV migration.

Measurements of low density, high velocity flow by electron beam fluorescence technique

International Nuclear Information System (INIS)

Soga, Takeo; Takanishi, Masaya; Yasuhara, Michiru

1981-01-01

A low density chamber with an electron gun system was made for the measurements of low density, high velocity (high Mach number) flow. This apparatus is a continuous running facility. The number density and the rotational temperature in the underexpanding free jet of nitrogen were measured along the axis of the jet by the electron beam fluorescence technique. The measurements were carried out from the vicinity of the exit of the jet to far downstream of the first Mach disk. Rotational nonequilibrium phenomena were observed in the hypersonic flow field as well as in the shock wave (Mach disk). (author)

Fabrication of ultrahigh density metal-cell-metal crossbar memory devices with only two cycles of lithography and dry-etch procedures

KAUST Repository

Zong, Baoyu

2013-05-20

A novel approach to the fabrication of metal-cell-metal trilayer memory devices was demonstrated by using only two cycles of lithography and dry-etch procedures. The fabricated ultrahigh density crossbar devices can be scaled down to ≤70 nm in half-pitch without alignment issues. Depending on the different dry-etch mechanisms in transferring high and low density nanopatterns, suitable dry-etch angles and methods are studied for the transfer of high density nanopatterns. Some novel process methods have also been developed to eliminate the sidewall and other conversion obstacles for obtaining high density of uniform metallic nanopatterns. With these methods, ultrahigh density trilayer crossbar devices (∼2 × 1010 bit cm-2-kilobit electronic memory), which are composed of built-in practical magnetoresistive nanocells, have been achieved. This scalable process that we have developed provides the relevant industries with a cheap means to commercially fabricate three-dimensional high density metal-cell-metal nanodevices. © 2013 IOP Publishing Ltd.

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-01-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Polymer Ferroelectric Memory for Flexible Electronics

KAUST Repository

Khan, Mohd Adnan

2013-11-01

With the projected growth of the flexible and plastic electronics industry, there is renewed interest in the research community to develop high performance all-polymeric memory which will be an essential component of any electronic circuit. Some of the efforts in polymer memories are based on different mechanisms such as filamentary conduction, charge trapping effects, dipole alignment, and reduction-oxidation to name a few. Among these the leading candidate are those based on the mechanism of ferroelectricity. Polymer ferroelectric memory can be used in niche applications like smart cards, RFID tags, sensors etc. This dissertation will focus on novel material and device engineering to fabricate high performance low temperature polymeric ferroelectric memory for flexible electronics. We address and find solutions to some fundamental problems affecting all polymer ferroelectric memory like high coercive fields, fatigue and thermal stability issues, poor breakdown strength and poor p-type hole mobilities. Some of the strategies adopted in this dissertation are: Use of different flexible substrates, electrode engineering to improve charge injection and fatigue properties of ferroelectric polymers, large area ink jet printing of ferroelectric memory devices, use of polymer blends to improve insulating properties of ferroelectric polymers and use of oxide semiconductors to fabricate high mobility p-type ferroelectric memory. During the course of this dissertation we have fabricated: the first all-polymer ferroelectric capacitors with solvent modified highly conducting polymeric poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) [PEDOT:PSS] electrodes on plastic substrates with performance as good as devices with metallic Platinum-Gold electrodes on silicon substrates; the first all-polymer high performance ferroelectric memory on banknotes for security applications; novel ferroelectric capacitors based on blends of ferroelectric poly(vinylidene fluoride

Device and method for relativistic electron beam heating of a high-density plasma to drive fast liners

International Nuclear Information System (INIS)

Thode, L.E.

1981-01-01

A device and method for relativistic electron beam heating of a high-density plasma in a small localized region are described. A relativistic electron beam generator or accelerator produces a high-voltage electron beam which propagates along a vacuum drift tube and is modulated to initiate electron bunching within the beam. The beam is then directed through a low-density gas chamber which provides isolation between the vacuum modulator and the relativistic electron beam target. The relativistic beam is then applied to a high-density target plasma which typically comprises dt, dd, hydrogen boron or similar thermonuclear gas at a density of 1017 to 1020 electrons per cubic centimeter. The target gas is ionized prior to application of the electron beam by means of a laser or other preionization source to form a plasma. Utilizing a relativistic electron beam with an individual particle energy exceeding 3 mev, classical scattering by relativistic electrons passing through isolation foils is negligible. As a result, relativistic streaming instabilities are initiated within the high-density target plasma causing the relativistic electron beam to efficiently deposit its energy and momentum into a small localized region of the high-density plasma target. Fast liners disposed in the high-density target plasma are explosively or ablatively driven to implosion by a heated annular plasma surrounding the fast liner which is generated by an annular relativistic electron beam. An azimuthal magnetic field produced by axial current flow in the annular plasma, causes the energy in the heated annular plasma to converge on the fast liner

Detection of an electron beam in a high density plasma via an electrostatic probe

Science.gov (United States)

Majeski, Stephen; Yoo, Jongsoo; Zweben, Stewart; Yamada, Masaaki; Ji, Hantao

2017-10-01

The perturbation in floating potential by an electron beam is detected by a 1D floating potential probe array to evaluate the use of an electron beam for magnetic field line mapping in the Magnetic Reconnection Experiment (MRX) plasma. The MRX plasma is relatively high density (1013 cm-3) and low temperature (5 eV). Beam electrons are emitted from a tungsten filament and are accelerated by a 200 V potential across the sheath. They stream along the magnetic field lines towards the probe array. The spatial electron beam density profile is assumed to be a Gaussian along the radial axis of MRX and the effective beam width is determined from the radial profile of the floating potential. The magnitude of the perturbation is in agreement with theoretical predictions and the location of the perturbation is also in agreement with field line mapping. In addition, no significant broadening of the electron beam is observed after propagation for tens of centimeters through the high density plasma. These results demonstrate that this method of field line mapping is, in principle, feasible in high density plasmas. This work is supported by the DOE Contract No. DE-AC0209CH11466.

Coaxial wet-spun yarn supercapacitors for high-energy density and safe wearable electronics

Science.gov (United States)

Kou, Liang; Huang, Tieqi; Zheng, Bingna; Han, Yi; Zhao, Xiaoli; Gopalsamy, Karthikeyan; Sun, Haiyan; Gao, Chao

2014-01-01

Yarn supercapacitors have great potential in future portable and wearable electronics because of their tiny volume, flexibility and weavability. However, low-energy density limits their development in the area of wearable high-energy density devices. How to enhance their energy densities while retaining their high-power densities is a critical challenge for yarn supercapacitor development. Here we propose a coaxial wet-spinning assembly approach to continuously spin polyelectrolyte-wrapped graphene/carbon nanotube core-sheath fibres, which are used directly as safe electrodes to assembly two-ply yarn supercapacitors. The yarn supercapacitors using liquid and solid electrolytes show ultra-high capacitances of 269 and 177 mF cm−2 and energy densities of 5.91 and 3.84 μWh cm−2, respectively. A cloth supercapacitor superior to commercial capacitor is further interwoven from two individual 40-cm-long coaxial fibres. The combination of scalable coaxial wet-spinning technology and excellent performance of yarn supercapacitors paves the way to wearable and safe electronics. PMID:24786366

Coaxial wet-spun yarn supercapacitors for high-energy density and safe wearable electronics

Science.gov (United States)

Kou, Liang; Huang, Tieqi; Zheng, Bingna; Han, Yi; Zhao, Xiaoli; Gopalsamy, Karthikeyan; Sun, Haiyan; Gao, Chao

2014-05-01

Yarn supercapacitors have great potential in future portable and wearable electronics because of their tiny volume, flexibility and weavability. However, low-energy density limits their development in the area of wearable high-energy density devices. How to enhance their energy densities while retaining their high-power densities is a critical challenge for yarn supercapacitor development. Here we propose a coaxial wet-spinning assembly approach to continuously spin polyelectrolyte-wrapped graphene/carbon nanotube core-sheath fibres, which are used directly as safe electrodes to assembly two-ply yarn supercapacitors. The yarn supercapacitors using liquid and solid electrolytes show ultra-high capacitances of 269 and 177 mF cm-2 and energy densities of 5.91 and 3.84 μWh cm-2, respectively. A cloth supercapacitor superior to commercial capacitor is further interwoven from two individual 40-cm-long coaxial fibres. The combination of scalable coaxial wet-spinning technology and excellent performance of yarn supercapacitors paves the way to wearable and safe electronics.

Non-volatile memories

CERN Document Server

Lacaze, Pierre-Camille

2014-01-01

Written for scientists, researchers, and engineers, Non-volatile Memories describes the recent research and implementations in relation to the design of a new generation of non-volatile electronic memories. The objective is to replace existing memories (DRAM, SRAM, EEPROM, Flash, etc.) with a universal memory model likely to reach better performances than the current types of memory: extremely high commutation speeds, high implantation densities and retention time of information of about ten years.

CO2 laser interferometer for temporally and spatially resolved electron density measurements

Science.gov (United States)

Brannon, P. J.; Gerber, R. A.; Gerardo, J. B.

1982-09-01

A 10.6-μm Mach-Zehnder interferometer has been constructed to make temporally and spatially resolved measurements of electron densities in plasmas. The device uses a pyroelectric vidicon camera and video memory to record and display the two-dimensional fringe pattern and a Pockels cell to limit the pulse width of the 10.6-μm radiation. A temporal resolution of 14 ns has been demonstrated. The relative sensitivity of the device for electron density measurements is 2×1015 cm-2 (the line integral of the line-of-sight length and electron density), which corresponds to 0.1 fringe shift.

CO2 laser interferometer for temporally and spatially resolved electron density measurements

International Nuclear Information System (INIS)

Brannon, P.J.; Gerber, R.A.; Gerardo, J.B.

1982-01-01

A 10.6-μm Mach--Zehnder interferometer has been constructed to make temporally and spatially resolved measurements of electron densities in plasmas. The device uses a pyroelectric vidicon camera and video memory to record and display the two-dimensional fringe pattern and a Pockels cell to limit the pulse width of the 10.6-μm radiation. A temporal resolution of 14 ns has been demonstrated. The relative sensitivity of the device for electron density measurements is 2 x 10 15 cm -2 (the line integral of the line-of-sight length and electron density), which corresponds to 0.1 fringe shift

Transition densities with electron scattering

International Nuclear Information System (INIS)

Heisenberg, J.

1985-01-01

This paper reviews the ground state and transition charge densities in nuclei via electron scattering. Using electrons as a spectroscopic tool in nuclear physics, these transition densities can be determined with high precision, also in the nuclear interior. These densities generally ask for a microscopic interpretation in terms of contributions from individual nucleons. The results for single particle transitions confirm the picture of particle-phonon coupling. (Auth.)

Technology breakthroughs in high performance metal-oxide-semiconductor devices for ultra-high density, low power non-volatile memory applications

Science.gov (United States)

Hong, Augustin Jinwoo

Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.

Ultra-Stretchable Interconnects for High-Density Stretchable Electronics

Directory of Open Access Journals (Sweden)

Salman Shafqat

2017-09-01

Full Text Available The exciting field of stretchable electronics (SE promises numerous novel applications, particularly in-body and medical diagnostics devices. However, future advanced SE miniature devices will require high-density, extremely stretchable interconnects with micron-scale footprints, which calls for proven standardized (complementary metal-oxide semiconductor (CMOS-type process recipes using bulk integrated circuit (IC microfabrication tools and fine-pitch photolithography patterning. Here, we address this combined challenge of microfabrication with extreme stretchability for high-density SE devices by introducing CMOS-enabled, free-standing, miniaturized interconnect structures that fully exploit their 3D kinematic freedom through an interplay of buckling, torsion, and bending to maximize stretchability. Integration with standard CMOS-type batch processing is assured by utilizing the Flex-to-Rigid (F2R post-processing technology to make the back-end-of-line interconnect structures free-standing, thus enabling the routine microfabrication of highly-stretchable interconnects. The performance and reproducibility of these free-standing structures is promising: an elastic stretch beyond 2000% and ultimate (plastic stretch beyond 3000%, with <0.3% resistance change, and >10 million cycles at 1000% stretch with <1% resistance change. This generic technology provides a new route to exciting highly-stretchable miniature devices.

High-frequency emissions during the propagation of an electron beam in a high-density plasma

International Nuclear Information System (INIS)

Lalita and Tripathi, V.K.

1988-01-01

A relativistic annular electron beam passing through a high-density plasma excites Langmuir waves via Cerenkov interaction. The Langmuir waves are backscattered off ions via nonlinear ion Landau damping. At moderately high amplitudes these waves are parametrically up-converted by the beam into high-frequency electromagnetic radiation, as observed in some recent experiments. A nonlocal theory of this process is developed in a cylindrical geometry. It is seen that the growth rate of the Langmuir wave scales as one-third power of beam density. The growth rate of parametric instability scales as one-fourth power of beam density and the square root of beam thickness

Low-memory iterative density fitting.

Science.gov (United States)

Grajciar, Lukáš

2015-07-30

A new low-memory modification of the density fitting approximation based on a combination of a continuous fast multipole method (CFMM) and a preconditioned conjugate gradient solver is presented. Iterative conjugate gradient solver uses preconditioners formed from blocks of the Coulomb metric matrix that decrease the number of iterations needed for convergence by up to one order of magnitude. The matrix-vector products needed within the iterative algorithm are calculated using CFMM, which evaluates them with the linear scaling memory requirements only. Compared with the standard density fitting implementation, up to 15-fold reduction of the memory requirements is achieved for the most efficient preconditioner at a cost of only 25% increase in computational time. The potential of the method is demonstrated by performing density functional theory calculations for zeolite fragment with 2592 atoms and 121,248 auxiliary basis functions on a single 12-core CPU workstation. © 2015 Wiley Periodicals, Inc.

Compression of a mixed antiproton and electron non-neutral plasma to high densities

Science.gov (United States)

Aghion, Stefano; Amsler, Claude; Bonomi, Germano; Brusa, Roberto S.; Caccia, Massimo; Caravita, Ruggero; Castelli, Fabrizio; Cerchiari, Giovanni; Comparat, Daniel; Consolati, Giovanni; Demetrio, Andrea; Di Noto, Lea; Doser, Michael; Evans, Craig; Fanì, Mattia; Ferragut, Rafael; Fesel, Julian; Fontana, Andrea; Gerber, Sebastian; Giammarchi, Marco; Gligorova, Angela; Guatieri, Francesco; Haider, Stefan; Hinterberger, Alexander; Holmestad, Helga; Kellerbauer, Alban; Khalidova, Olga; Krasnický, Daniel; Lagomarsino, Vittorio; Lansonneur, Pierre; Lebrun, Patrice; Malbrunot, Chloé; Mariazzi, Sebastiano; Marton, Johann; Matveev, Victor; Mazzotta, Zeudi; Müller, Simon R.; Nebbia, Giancarlo; Nedelec, Patrick; Oberthaler, Markus; Pacifico, Nicola; Pagano, Davide; Penasa, Luca; Petracek, Vojtech; Prelz, Francesco; Prevedelli, Marco; Rienaecker, Benjamin; Robert, Jacques; Røhne, Ole M.; Rotondi, Alberto; Sandaker, Heidi; Santoro, Romualdo; Smestad, Lillian; Sorrentino, Fiodor; Testera, Gemma; Tietje, Ingmari C.; Widmann, Eberhard; Yzombard, Pauline; Zimmer, Christian; Zmeskal, Johann; Zurlo, Nicola; Antonello, Massimiliano

2018-04-01

We describe a multi-step "rotating wall" compression of a mixed cold antiproton-electron non-neutral plasma in a 4.46 T Penning-Malmberg trap developed in the context of the AEḡIS experiment at CERN. Such traps are routinely used for the preparation of cold antiprotons suitable for antihydrogen production. A tenfold antiproton radius compression has been achieved, with a minimum antiproton radius of only 0.17 mm. We describe the experimental conditions necessary to perform such a compression: minimizing the tails of the electron density distribution is paramount to ensure that the antiproton density distribution follows that of the electrons. Such electron density tails are remnants of rotating wall compression and in many cases can remain unnoticed. We observe that the compression dynamics for a pure electron plasma behaves the same way as that of a mixed antiproton and electron plasma. Thanks to this optimized compression method and the high single shot antiproton catching efficiency, we observe for the first time cold and dense non-neutral antiproton plasmas with particle densities n ≥ 1013 m-3, which pave the way for an efficient pulsed antihydrogen production in AEḡIS.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

KAUST Repository

Ghoneim, Mohamed T.; Hussain, Muhammad Mustafa

2015-01-01

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

Directory of Open Access Journals (Sweden)

Mohamed T. Ghoneim

2015-07-01

Full Text Available Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT, the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Review on Physically Flexible Nonvolatile Memory for Internet of Everything Electronics

KAUST Repository

Ghoneim, Mohamed T.

2015-07-23

Solid-state memory is an essential component of the digital age. With advancements in healthcare technology and the Internet of Things (IoT), the demand for ultra-dense, ultra-low-power memory is increasing. In this review, we present a comprehensive perspective on the most notable approaches to the fabrication of physically flexible memory devices. With the future goal of replacing traditional mechanical hard disks with solid-state storage devices, a fully flexible electronic system will need two basic devices: transistors and nonvolatile memory. Transistors are used for logic operations and gating memory arrays, while nonvolatile memory (NVM) devices are required for storing information in the main memory and cache storage. Since the highest density of transistors and storage structures is manifested in memories, the focus of this review is flexible NVM. Flexible NVM components are discussed in terms of their functionality, performance metrics, and reliability aspects, all of which are critical components for NVM technology to be part of mainstream consumer electronics, IoT, and advanced healthcare devices. Finally, flexible NVMs are benchmarked and future prospects are provided.

Stabilization of electron-scale turbulence by electron density gradient in national spherical torus experiment

Energy Technology Data Exchange (ETDEWEB)

Ruiz Ruiz, J.; White, A. E. [MIT-Plasma Science and Fusion Center, Cambridge, Massachusetts 02139 (United States); Ren, Y.; Guttenfelder, W.; Kaye, S. M.; Leblanc, B. P.; Mazzucato, E. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Lee, K. C. [National Fusion Research Institute, Daejeon (Korea, Republic of); Domier, C. W. [University of California at Davis, Davis, California 95616 (United States); Smith, D. R. [University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States); Yuh, H. [Nova Photonics, Inc., Princeton, New Jersey 08540 (United States)

2015-12-15

Theory and experiments have shown that electron temperature gradient (ETG) turbulence on the electron gyro-scale, k{sub ⊥}ρ{sub e} ≲ 1, can be responsible for anomalous electron thermal transport in NSTX. Electron scale (high-k) turbulence is diagnosed in NSTX with a high-k microwave scattering system [D. R. Smith et al., Rev. Sci. Instrum. 79, 123501 (2008)]. Here we report on stabilization effects of the electron density gradient on electron-scale density fluctuations in a set of neutral beam injection heated H-mode plasmas. We found that the absence of high-k density fluctuations from measurements is correlated with large equilibrium density gradient, which is shown to be consistent with linear stabilization of ETG modes due to the density gradient using the analytical ETG linear threshold in F. Jenko et al. [Phys. Plasmas 8, 4096 (2001)] and linear gyrokinetic simulations with GS2 [M. Kotschenreuther et al., Comput. Phys. Commun. 88, 128 (1995)]. We also found that the observed power of electron-scale turbulence (when it exists) is anti-correlated with the equilibrium density gradient, suggesting density gradient as a nonlinear stabilizing mechanism. Higher density gradients give rise to lower values of the plasma frame frequency, calculated based on the Doppler shift of the measured density fluctuations. Linear gyrokinetic simulations show that higher values of the electron density gradient reduce the value of the real frequency, in agreement with experimental observation. Nonlinear electron-scale gyrokinetic simulations show that high electron density gradient reduces electron heat flux and stiffness, and increases the ETG nonlinear threshold, consistent with experimental observations.

A stacked memory device on logic 3D technology for ultra-high-density data storage

International Nuclear Information System (INIS)

Kim, Jiyoung; Hong, Augustin J; Kim, Sung Min; Shin, Kyeong-Sik; Song, Emil B; Hwang, Yongha; Xiu, Faxian; Galatsis, Kosmas; Chui, Chi On; Candler, Rob N; Wang, Kang L; Choi, Siyoung; Moon, Joo-Tae

2011-01-01

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.

A stacked memory device on logic 3D technology for ultra-high-density data storage

Energy Technology Data Exchange (ETDEWEB)

Kim, Jiyoung; Hong, Augustin J; Kim, Sung Min; Shin, Kyeong-Sik; Song, Emil B; Hwang, Yongha; Xiu, Faxian; Galatsis, Kosmas; Chui, Chi On; Candler, Rob N; Wang, Kang L [Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, CA 90095 (United States); Choi, Siyoung; Moon, Joo-Tae, E-mail: hbt100@ee.ucla.edu [Advanced Technology Development Team and Process Development Team, Memory R and D Center, Samsung Electronics Co. Ltd (Korea, Republic of)

2011-06-24

We have demonstrated, for the first time, a novel three-dimensional (3D) memory chip architecture of stacked-memory-devices-on-logic (SMOL) achieving up to 95% of cell-area efficiency by directly building up memory devices on top of front-end CMOS devices. In order to realize the SMOL, a unique 3D Flash memory device and vertical integration structure have been successfully developed. The SMOL architecture has great potential to achieve tera-bit level memory density by stacking memory devices vertically and maximizing cell-area efficiency. Furthermore, various emerging devices could replace the 3D memory device to develop new 3D chip architectures.

Evaporation of carbon using electrons of a high density plasma; Evaporacion de carbono usando los electrones de un plasma de alta densidad

Energy Technology Data Exchange (ETDEWEB)

Muhl, S.; Camps, E.; Escobar A, L.; Garcia E, J.L.; Olea, O. [Instituto de Investigaciones en Materiales, UNAM, C.P. 04510 Mexico D.F. (Mexico)

2000-07-01

The high density plasmas are used frequently in the preparation of thin films or surface modification, for example to nitridation. In these processes, are used mainly the ions and the neutrals which compose the plasma. However, the electrons present in the plasma are not used, except in the case of chemical reactions induced by collisions, although the electron bombardment usually get hot the work piece. Through the adequate polarization of a conductor material, it is possible to extract electrons from a high density plasma at low pressure, that could be gotten the evaporation of this material. As result of the interaction between the plasma and the electron flux with the vapor produced, this last will be ionized. In this work, it is reported the use of this novelty arrangement to prepare carbon thin films using a high density argon plasma and a high purity graphite bar as material to evaporate. It has been used substrates outside plasma and immersed in the plasma. Also it has been reported the plasma characteristics (temperature and electron density, energy and ions flux), parameters of the deposit process (deposit rate and ion/neutral rate) as well as the properties of the films obtained (IR absorption spectra and UV/Vis, elemental analysis, hardness and refractive index). (Author)

Imaginary time density-density correlations for two-dimensional electron gases at high density

Energy Technology Data Exchange (ETDEWEB)

Motta, M.; Galli, D. E. [Dipartimento di Fisica, Università degli Studi di Milano, Via Celoria 16, 20133 Milano (Italy); Moroni, S. [IOM-CNR DEMOCRITOS National Simulation Center and SISSA, Via Bonomea 265, 34136 Trieste (Italy); Vitali, E. [Department of Physics, College of William and Mary, Williamsburg, Virginia 23187-8795 (United States)

2015-10-28

We evaluate imaginary time density-density correlation functions for two-dimensional homogeneous electron gases of up to 42 particles in the continuum using the phaseless auxiliary field quantum Monte Carlo method. We use periodic boundary conditions and up to 300 plane waves as basis set elements. We show that such methodology, once equipped with suitable numerical stabilization techniques necessary to deal with exponentials, products, and inversions of large matrices, gives access to the calculation of imaginary time correlation functions for medium-sized systems. We discuss the numerical stabilization techniques and the computational complexity of the methodology and we present the limitations related to the size of the systems on a quantitative basis. We perform the inverse Laplace transform of the obtained density-density correlation functions, assessing the ability of the phaseless auxiliary field quantum Monte Carlo method to evaluate dynamical properties of medium-sized homogeneous fermion systems.

Electrons of high perpendicular energy in the low-density regime of Tokamaks

International Nuclear Information System (INIS)

Bornatici, M.; Engelmann, F.

1978-01-01

Effects due to instabilities excited in the low-density regime of tokamaks by runaway electrons via the cyclotron resonance ω+Ω=kV along with the formation of a positive slope in the runaway distribution are considered. Conditions for the production of electrons of high perpendicular energy and their trapping in toroidal field ripples, leading to liner damage, are discussed and found to be rather stringent. Fairly good agreement with the experiments is found

Cooling of high-density and power electronics by means of heat pipes

International Nuclear Information System (INIS)

Hubbeling, L.

1980-06-01

This report describes how heat pipes can be used for cooling modern electronic equipment, with numerous advantages over air-cooled systems. A brief review of heat-pipe properties is given, with a detailed description of a functioning prototype. This is a single-width CAMAC unit containing high-density electronic circuits cooled by three heat pipes, and allowing a dissipation of over 120 W instead of the normal maximum of 20 W. (orig.)

Scalable Sub-micron Patterning of Organic Materials Toward High Density Soft Electronics.

Science.gov (United States)

Kim, Jaekyun; Kim, Myung-Gil; Kim, Jaehyun; Jo, Sangho; Kang, Jingu; Jo, Jeong-Wan; Lee, Woobin; Hwang, Chahwan; Moon, Juhyuk; Yang, Lin; Kim, Yun-Hi; Noh, Yong-Young; Jaung, Jae Yun; Kim, Yong-Hoon; Park, Sung Kyu

2015-09-28

The success of silicon based high density integrated circuits ignited explosive expansion of microelectronics. Although the inorganic semiconductors have shown superior carrier mobilities for conventional high speed switching devices, the emergence of unconventional applications, such as flexible electronics, highly sensitive photosensors, large area sensor array, and tailored optoelectronics, brought intensive research on next generation electronic materials. The rationally designed multifunctional soft electronic materials, organic and carbon-based semiconductors, are demonstrated with low-cost solution process, exceptional mechanical stability, and on-demand optoelectronic properties. Unfortunately, the industrial implementation of the soft electronic materials has been hindered due to lack of scalable fine-patterning methods. In this report, we demonstrated facile general route for high throughput sub-micron patterning of soft materials, using spatially selective deep-ultraviolet irradiation. For organic and carbon-based materials, the highly energetic photons (e.g. deep-ultraviolet rays) enable direct photo-conversion from conducting/semiconducting to insulating state through molecular dissociation and disordering with spatial resolution down to a sub-μm-scale. The successful demonstration of organic semiconductor circuitry promise our result proliferate industrial adoption of soft materials for next generation electronics.

Laboratory Astrophysics Using High Energy Density Photon and Electron Beams

CERN Document Server

Bingham, Robert

2005-01-01

The development of intense laser and particle beams has opened up new opportunities to study high energy density astrophysical processes in the Laboratory. With even higher laser intensities possible in the near future vacuum polarization processes such as photon - photon scattering with or without large magnetic fields may also be experimentally observed. In this talk I will review the status of laboratory experiments using intense beans to investigate extreme astrophysical phenomena such as supernovae explosions, gamma x-ray bursts, ultra-high energy cosmic accelerators etc. Just as intense photon or electron beams can excite relativistic electron plasma waves or wakefields used in plasma acceleration, intense neutrino beams from type II supernovae can also excite wakefields or plasma waves. Other instabilities driven by intense beams relevant to perhaps x-ray bursts is the Weibel instability. Simulation results of extreme processes will also be presented.

Electron density and gas density measurements in a millimeter-wave discharge

Energy Technology Data Exchange (ETDEWEB)

Schaub, S. C., E-mail: sschaub@mit.edu; Hummelt, J. S.; Guss, W. C.; Shapiro, M. A.; Temkin, R. J. [Plasma Science and Fusion Center, Massachusetts Institute of Technology 167 Albany St., Bldg. NW16, Cambridge, Massachusetts 02139 (United States)

2016-08-15

Electron density and neutral gas density have been measured in a non-equilibrium air breakdown plasma using optical emission spectroscopy and two-dimensional laser interferometry, respectively. A plasma was created with a focused high frequency microwave beam in air. Experiments were run with 110 GHz and 124.5 GHz microwaves at powers up to 1.2 MW. Microwave pulses were 3 μs long at 110 GHz and 2.2 μs long at 124.5 GHz. Electron density was measured over a pressure range of 25 to 700 Torr as the input microwave power was varied. Electron density was found to be close to the critical density, where the collisional plasma frequency is equal to the microwave frequency, over the pressure range studied and to vary weakly with input power. Neutral gas density was measured over a pressure range from 150 to 750 Torr at power levels high above the threshold for initiating breakdown. The two-dimensional structure of the neutral gas density was resolved. Intense, localized heating was found to occur hundreds of nanoseconds after visible plasma formed. This heating led to neutral gas density reductions of greater than 80% where peak plasma densities occurred. Spatial structure and temporal dynamics of gas heating at atmospheric pressure were found to agree well with published numerical simulations.

Electron density and gas density measurements in a millimeter-wave discharge

International Nuclear Information System (INIS)

Schaub, S. C.; Hummelt, J. S.; Guss, W. C.; Shapiro, M. A.; Temkin, R. J.

2016-01-01

Electron density and neutral gas density have been measured in a non-equilibrium air breakdown plasma using optical emission spectroscopy and two-dimensional laser interferometry, respectively. A plasma was created with a focused high frequency microwave beam in air. Experiments were run with 110 GHz and 124.5 GHz microwaves at powers up to 1.2 MW. Microwave pulses were 3 μs long at 110 GHz and 2.2 μs long at 124.5 GHz. Electron density was measured over a pressure range of 25 to 700 Torr as the input microwave power was varied. Electron density was found to be close to the critical density, where the collisional plasma frequency is equal to the microwave frequency, over the pressure range studied and to vary weakly with input power. Neutral gas density was measured over a pressure range from 150 to 750 Torr at power levels high above the threshold for initiating breakdown. The two-dimensional structure of the neutral gas density was resolved. Intense, localized heating was found to occur hundreds of nanoseconds after visible plasma formed. This heating led to neutral gas density reductions of greater than 80% where peak plasma densities occurred. Spatial structure and temporal dynamics of gas heating at atmospheric pressure were found to agree well with published numerical simulations.

Electronic DC transformer with high power density

NARCIS (Netherlands)

Pavlovský, M.

2006-01-01

This thesis is concerned with the possibilities of increasing the power density of high-power dc-dc converters with galvanic isolation. Three cornerstones for reaching high power densities are identified as: size reduction of passive components, reduction of losses particularly in active components

Structural, electronic, and vibrational properties of high-density amorphous silicon: a first-principles molecular-dynamics study.

Science.gov (United States)

Morishita, Tetsuya

2009-05-21

We report a first-principles study of the structural, electronic, and dynamical properties of high-density amorphous (HDA) silicon, which was found to be formed by pressurizing low-density amorphous (LDA) silicon (a normal amorphous Si) [T. Morishita, Phys. Rev. Lett. 93, 055503 (2004); P. F. McMillan, M. Wilson, D. Daisenberger, and D. Machon, Nature Mater. 4, 680 (2005)]. Striking structural differences between HDA and LDA are revealed. The LDA structure holds a tetrahedral network, while the HDA structure contains a highly distorted tetrahedral network. The fifth neighboring atom in HDA tends to be located at an interstitial position of a distorted tetrahedron composed of the first four neighboring atoms. Consequently, the coordination number of HDA is calculated to be approximately 5 unlike that of LDA. The electronic density of state (EDOS) shows that HDA is metallic, which is consistent with a recent experimental measurement of the electronic resistance of HDA Si. We find from local EDOS that highly distorted tetrahedral configurations enhance the metallic nature of HDA. The vibrational density of state (VDOS) also reflects the structural differences between HDA and LDA. Some of the characteristic vibrational modes of LDA are dematerialized in HDA, indicating the degradation of covalent bonds. The overall profile of the VDOS for HDA is found to be an intermediate between that for LDA and liquid Si under pressure (high-density liquid Si).

High frequency electric field spikes formed by electron beam-plasma interaction in plasma density gradients

International Nuclear Information System (INIS)

Gunell, H.; Loefgren, T.

1997-02-01

In the electron beam-plasma interaction at an electric double layer the beam density is much higher than in the classical beam-plasma experiments. The wave propagation takes place along the density gradient, that is present at the high potential side of the double layer. Such a case is studied experimentally by injecting the electron beam from a plane cathode, without any grids suppressing the gradient, and by particle simulations. The high frequency field concentrates in a sharp 'spike' with a half width of the order of one wavelength. The spike is found to be a standing wave surrounded by regions dominated by propagating waves. It forms at a position where its frequency is close to the local plasma frequency. The spike forms also when the electric field is well below the threshold for modulational instability, and long before a density cavity is formed in the simulations. Particle simulations reveal that, at the spike, there is a backward travelling wave that, when it is strongly damped, accelerates electrons back towards the cathode. In a simulation of a homogeneous plasma without the density gradient no spike is seen, and the wave is purely travelling instead of standing. 9 refs

Organic ferroelectric opto-electronic memories

NARCIS (Netherlands)

Asadi, K.; Li, M.; Blom, P.W.M.; Kemerink, M.; Leeuw, D.M. de

2011-01-01

Memory is a prerequisite for many electronic devices. Organic non-volatile memory devices based on ferroelectricity are a promising approach towards the development of a low-cost memory technology based on a simple cross-bar array. In this review article we discuss the latest developments in this

Transparent Memory For Harsh Electronics

KAUST Repository

Ho, C. H.; Duran Retamal, Jose Ramon; Yang, P. K.; Lee, C. P.; Tsai, M. L.; Kang, C. F.; He, Jr-Hau

2017-01-01

As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance

Nanopatterned ferroelectrics for ultrahigh density rad-hard nonvolatile memories.

Energy Technology Data Exchange (ETDEWEB)

Brennecka, Geoffrey L.; Stevens, Jeffrey; Scrymgeour, David; Gin, Aaron V.; Tuttle, Bruce Andrew

2010-09-01

Radiation hard nonvolatile random access memory (NVRAM) is a crucial component for DOE and DOD surveillance and defense applications. NVRAMs based upon ferroelectric materials (also known as FERAMs) are proven to work in radiation-rich environments and inherently require less power than many other NVRAM technologies. However, fabrication and integration challenges have led to state-of-the-art FERAMs still being fabricated using a 130nm process while competing phase-change memory (PRAM) has been demonstrated with a 20nm process. Use of block copolymer lithography is a promising approach to patterning at the sub-32nm scale, but is currently limited to self-assembly directly on Si or SiO{sub 2} layers. Successful integration of ferroelectrics with discrete and addressable features of {approx}15-20nm would represent a 100-fold improvement in areal memory density and would enable more highly integrated electronic devices required for systems advances. Towards this end, we have developed a technique that allows us to carry out block copolymer self-assembly directly on a huge variety of different materials and have investigated the fabrication, integration, and characterization of electroceramic materials - primarily focused on solution-derived ferroelectrics - with discrete features of {approx}20nm and below. Significant challenges remain before such techniques will be capable of fabricating fully integrated NVRAM devices, but the tools developed for this effort are already finding broader use. This report introduces the nanopatterned NVRAM device concept as a mechanism for motivating the subsequent studies, but the bulk of the document will focus on the platform and technology development.

The future of memory

Science.gov (United States)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Modeling of SONOS Memory Cell Erase Cycle

Science.gov (United States)

Phillips, Thomas A.; MacLeod, Todd C.; Ho, Fat H.

2011-01-01

Utilization of Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) nonvolatile semiconductor memories as a flash memory has many advantages. These electrically erasable programmable read-only memories (EEPROMs) utilize low programming voltages, have a high erase/write cycle lifetime, are radiation hardened, and are compatible with high-density scaled CMOS for low power, portable electronics. In this paper, the SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. Comparisons were made between the model predictions and experimental data.

Towards Terabit Memories

Science.gov (United States)

Hoefflinger, Bernd

Memories have been the major yardstick for the continuing validity of Moore's law. In single-transistor-per-Bit dynamic random-access memories (DRAM), the number of bits per chip pretty much gives us the number of transistors. For decades, DRAM's have offered the largest storage capacity per chip. However, DRAM does not scale any longer, both in density and voltage, severely limiting its power efficiency to 10 fJ/b. A differential DRAM would gain four-times in density and eight-times in energy. Static CMOS RAM (SRAM) with its six transistors/cell is gaining in reputation because it scales well in cell size and operating voltage so that its fundamental advantage of speed, non-destructive read-out and low-power standby could lead to just 2.5 electrons/bit in standby and to a dynamic power efficiency of 2aJ/b. With a projected 2020 density of 16 Gb/cm², the SRAM would be as dense as normal DRAM and vastly better in power efficiency, which would mean a major change in the architecture and market scenario for DRAM versus SRAM. Non-volatile Flash memory have seen two quantum jumps in density well beyond the roadmap: Multi-Bit storage per transistor and high-density TSV (through-silicon via) technology. The number of electrons required per Bit on the storage gate has been reduced since their first realization in 1996 by more than an order of magnitude to 400 electrons/Bit in 2010 for a complexity of 32Gbit per chip at the 32 nm node. Chip stacking of eight chips with TSV has produced a 32GByte solid-state drive (SSD). A stack of 32 chips with 2 b/cell at the 16 nm node will reach a density of 2.5 Terabit/cm². Non-volatile memory with a density of 10 × 10 nm²/Bit is the target for widespread development. Phase-change memory (PCM) and resistive memory (RRAM) lead in cell density, and they will reach 20 Gb/cm² in 2D and higher with 3D chip stacking. This is still almost an order-of-magnitude less than Flash. However, their read-out speed is ~10-times faster, with as yet

Principle for possible memory structures with extra high density by using the electron sharing mechanisms of atoms in an inflective orbit

Science.gov (United States)

Sengor, T.

2014-10-01

Both of the qualitative and quantitative knowledge of electromagnetic fields in the inter-atomic scale bring useful applications. From this point of view, bringing some possible new sights and solutions to atom-electron-photon-atom and/or molecule interactions is aimed in the near-field at inter atomic scale and their potential applications. The electron sharing processes between neighbor atoms are considered as an inflective surface system and an inflective guiding processes. The critical pass and transition structures are derived. The structures involving trigging that transition mechanisms may be suitable to design extra high density and fast data storage processes. The electron sharing processes between two near atomic system are modelled with gate mechanisms involving two distinct passages: continuous pass and discontinuous pass. Even if the stochastic processes are applicable at these cases theoretical approach putting an influence like inner and external dipole mechanisms fits best to the situation and provides almost deterministic scheme, which has potential to estimate some processes being able to design new electronics structures and devices. We call orbitron all of such structures and/or devices. The boundary value problem of atomic system sharing an electron in the way of electron passage model is formulated in inflective spherical coordinate system. The wave phenomenon is studied near spherically inflection points. The analytical essentials are derived for the solution of Helmholtz's equation when inflective boundaries are included. The evaluation is obtained by the extracted separation method. The results are given by using the spherically inflective wave series. The method is reshaped for the solution of Schrödinger equation.

Electron density measurements in the TRIAM-1 tokamak

Energy Technology Data Exchange (ETDEWEB)

Mitarai, O; Nakashima, H; Nakamura, K; Hiraki, N; Toi, K [Kyushu Univ., Fukuoka (Japan). Research Inst. for Applied Mechanics

1980-02-01

Electron density measurements in the TRIAM-1 tokamak are carried out by a 140 GHz microwave interferometer. To follow rapid density variations, a high-speed direct-reading type interferometer is constructed. The density of (1 - 20) x 10/sup 13/ cm/sup -3/ is measured.

Electron density measurements in the TRIAM-1 tokamak

International Nuclear Information System (INIS)

Mitarai, Osamu; Nakashima, Hisatoshi; Nakamura, Kazuo; Hiraki, Naoji; Toi, Kazuo

1980-01-01

Electron density measurements in the TRIAM-1 tokamak are carried out by a 140 GHz microwave interferometer. To follow rapid density variations, a high-speed direct-reading type interferometer is constructed. The density of (1 - 20) x 10 13 cm -3 is measured. (author)

Existence of time-dependent density-functional theory for open electronic systems: time-dependent holographic electron density theorem.

Science.gov (United States)

Zheng, Xiao; Yam, ChiYung; Wang, Fan; Chen, GuanHua

2011-08-28

We present the time-dependent holographic electron density theorem (TD-HEDT), which lays the foundation of time-dependent density-functional theory (TDDFT) for open electronic systems. For any finite electronic system, the TD-HEDT formally establishes a one-to-one correspondence between the electron density inside any finite subsystem and the time-dependent external potential. As a result, any electronic property of an open system in principle can be determined uniquely by the electron density function inside the open region. Implications of the TD-HEDT on the practicality of TDDFT are also discussed.

Recoverable Wire-Shaped Supercapacitors with Ultrahigh Volumetric Energy Density for Multifunctional Portable and Wearable Electronics.

Science.gov (United States)

Shi, Minjie; Yang, Cheng; Song, Xuefeng; Liu, Jing; Zhao, Liping; Zhang, Peng; Gao, Lian

2017-05-24

Wire-shaped supercapacitors (SCs) based on shape memory materials are of considerable interest for next-generation portable and wearable electronics. However, the bottleneck in this field is how to develop the devices with excellent electrochemical performance while well-maintaining recoverability and flexibility. Herein, a unique asymmetric electrode concept is put forward to fabricate smart wire-shaped SCs with ultrahigh energy density, which is realized by using porous carbon dodecahedra coated on NiTi alloy wire and flexible graphene fiber as yarn electrodes. Notably, the wire-shaped SCs not only exhibit high flexibility that can be readily woven into real clothing but also represent the available recoverable ability. When irreversible plastic deformations happen, the deformed shape of the devices can automatically resume the initial predesigned shape in a warm environment (about 35 °C). More importantly, the wire-shaped SCs act as efficient energy storage devices, which display high volumetric energy density (8.9 mWh/cm 3 ), volumetric power density (1080 mW/cm 3 ), strong durability in multiple mechanical states, and steady electrochemical behavior after repeated shape recovery processes. Considering their relative facile fabrication technology and excellent electrochemical performance, this asymmetric electrode strategy produced smart wire-shaped supercapacitors desirable for multifunctional portable and wearable electronics.

Near-Field Thermal Radiation for Solar Thermophotovoltaics and High Temperature Thermal Logic and Memory Applications

Science.gov (United States)

Elzouka, Mahmoud

This dissertation investigates Near-Field Thermal Radiation (NFTR) applied to MEMS-based concentrated solar thermophotovoltaics (STPV) energy conversion and thermal memory and logics. NFTR is the exchange of thermal radiation energy at nano/microscale; when separation between the hot and cold objects is less than dominant radiation wavelength (˜1 mum). NFTR is particularly of interest to the above applications due to its high rate of energy transfer, exceeding the blackbody limit by orders of magnitude, and its strong dependence on separation gap size, surface nano/microstructure and material properties. Concentrated STPV system converts solar radiation to electricity using heat as an intermediary through a thermally coupled absorber/emitter, which causes STPV to have one of the highest solar-to-electricity conversion efficiency limits (85.4%). Modeling of a near-field concentrated STPV microsystem is carried out to investigate the use of STPV based solid-state energy conversion as high power density MEMS power generator. Numerical results for In 0.18Ga0.82Sb PV cell illuminated with tungsten emitter showed significant enhancement in energy transfer, resulting in output power densities as high as 60 W/cm2; 30 times higher than the equivalent far-field power density. On thermal computing, this dissertation demonstrates near-field heat transfer enabled high temperature NanoThermoMechanical memory and logics. Unlike electronics, NanoThermoMechanical memory and logic devices use heat instead of electricity to record and process data; hence they can operate in harsh environments where electronics typically fail. NanoThermoMechanical devices achieve memory and thermal rectification functions through the coupling of near-field thermal radiation and thermal expansion in microstructures, resulting in nonlinear heat transfer between two temperature terminals. Numerical modeling of a conceptual NanoThermoMechanical is carried out; results include the dynamic response under

Compensated readout for high-density MOS-gated memristor crossbar array

KAUST Repository

Zidan, Mohammed A.

2015-01-01

Leakage current is one of the main challenges facing high-density MOS-gated memristor arrays. In this study, we show that leakage current ruins the memory readout process for high-density arrays, and analyze the tradeoff between the array density and its power consumption. We propose a novel readout technique and its underlying circuitry, which is able to compensate for the transistor leakage-current effect in the high-density gated memristor array.

Highly Stretchable Non-volatile Nylon Thread Memory

Science.gov (United States)

Kang, Ting-Kuo

2016-04-01

Integration of electronic elements into textiles, to afford e-textiles, can provide an ideal platform for the development of lightweight, thin, flexible, and stretchable e-textiles. This approach will enable us to meet the demands of the rapidly growing market of wearable-electronics on arbitrary non-conventional substrates. However the actual integration of the e-textiles that undergo mechanical deformations during both assembly and daily wear or satisfy the requirements of the low-end applications, remains a challenge. Resistive memory elements can also be fabricated onto a nylon thread (NT) for e-textile applications. In this study, a simple dip-and-dry process using graphene-PEDOT:PSS (poly(3,4-ethylenedioxythiophene) polystyrene sulfonate) ink is proposed for the fabrication of a highly stretchable non-volatile NT memory. The NT memory appears to have typical write-once-read-many-times characteristics. The results show that an ON/OFF ratio of approximately 103 is maintained for a retention time of 106 s. Furthermore, a highly stretchable strain and a long-term digital-storage capability of the ON-OFF-ON states are demonstrated in the NT memory. The actual integration of the knitted NT memories into textiles will enable new design possibilities for low-cost and large-area e-textile memory applications.

Equation satisfied by electron-electron mutual Coulomb repulsion energy density functional

OpenAIRE

Joubert, Daniel P.

2011-01-01

The electron-electron mutual Coulomb repulsion energy density functional satisfies an equation that links functionals and functional derivatives at N-electron and (N-1)-electron densities for densities determined from the same adiabatic scaled external potential for the N-electron system.

Localized electron density enhancements in the high-altitude polar ionosphere and their relationships with storm-enhanced density (SED plumes and polar tongues of ionization (TOI

Directory of Open Access Journals (Sweden)

Y. Kitanoya

2011-02-01

Full Text Available Events of localized electron density increase in the high-altitude (>3000 km polar ionosphere are occasionally identified by the thermal plasma instruments on the Akebono satellite. In this paper, we investigate the vertical density structure in one of such events in detail using simultaneous observations by the Akebono and DMSP F15 satellites, the SuperDARN radars, and a network of ground Global Positioning System (GPS receivers, and the statistical characteristics of a large number (>10 000 of such events using Akebono data over half of an 11-year solar cycle. At Akebono altitude, the parallel drift velocity is remarkably low and the O+ ion composition ratio remarkably high, inside the high plasma-density regions at high altitude. Detailed comparisons between Akebono, DMSP ion velocity and density, and GPS total electron content (TEC data suggest that the localized plasma density increase observed at high altitude on Akebono was likely connected with the polar tongue of ionization (TOI and/or storm enhanced density (SED plume observed in the F-region ionosphere. Together with the SuperDARN plasma convection map these data suggest that the TOI/SED plume penetrated into the polar cap due to anti-sunward convection and the plume existed in the same convection channel as the dense plasma at high altitude; in other words, the two were probably connected to each other by the convecting magnetic field lines. The observed features are consistent with the observed high-density plasma being transported from the mid-latitude ionosphere or plasmasphere and unlikely a part of the polar wind population.

Idempotent Dirac density matrix for ten-electron central field inhomogeneous electron liquids in terms of electron- and kinetic energy-densities

International Nuclear Information System (INIS)

March, N.H.

2006-08-01

A differential equation for the Dirac density matrix γ(r, r'), given ground-state electron- and kinetic energy-densities, has been derived by March and Suhai for one- and two-level occupancy. For ten-electron spin-compensated spherical systems, it is shown here that γ ≡ γ[ρ, t g ] where ρ and t g are electron- and kinetic energy-densities. The philosophy of March and Suhai is confirmed beyond two-level filling. An important byproduct of the present approach is an explicit expression for the one-body potential of DFT in terms of the p-shell electron density. (author)

Ultra low density biodegradable shape memory polymer foams with tunable physical properties

Science.gov (United States)

Singhal, Pooja; Wilson, Thomas S.; Cosgriff-Hernandez, Elizabeth; Maitland, Duncan J.

2017-12-12

Compositions and/or structures of degradable shape memory polymers (SMPs) ranging in form from neat/unfoamed to ultra low density materials of down to 0.005 g/cc density. These materials show controllable degradation rate, actuation temperature and breadth of transitions along with high modulus and excellent shape memory behavior. A method of m ly low density foams (up to 0.005 g/cc) via use of combined chemical and physical aking extreme blowing agents, where the physical blowing agents may be a single compound or mixtures of two or more compounds, and other related methods, including of using multiple co-blowing agents of successively higher boiling points in order to achieve a large range of densities for a fixed net chemical composition. Methods of optimization of the physical properties of the foams such as porosity, cell size and distribution, cell openness etc. of these materials, to further expand their uses and improve their performance.

Void formation in NiTi shape memory alloys by medium-voltage electron irradiation

International Nuclear Information System (INIS)

Schlossmacher, P.; Stober, T.

1995-01-01

In-situ electron irradiation experiments of NiTi shape memory alloys, using high-voltage transmission electron microscopes, result in amorphization of the intermetallic compound. In all of these experiments high-voltages more than 1.0 MeV had to be applied in order to induce the crystalline-to-amorphous transformation. To their knowledge no irradiation effects of medium-voltage electrons of e.g. 0.5 MeV have been reported in the literature. In this contribution, the authors describe void formation in two different NiTi shape memory alloys, resulting from in-situ electron irradiation, using a 300 kV electron beam in a transmission electron microscope. First evidence is presented that void formation is correlated with the total oxygen content of the alloys

Extension of electron cyclotron heating at ASDEX Upgrade with respect to high density operation

Directory of Open Access Journals (Sweden)

Schubert Martin

2017-01-01

Full Text Available The ASDEX Upgrade electron cyclotron resonance heating operates at 105 GHz and 140 GHz with flexible launching geometry and polarization. In 2016 four Gyrotrons with 10 sec pulse length and output power close to 1 MW per unit were available. The system is presently being extended to eight similar units in total. High heating power and high plasma density operation will be a part of the future ASDEX Upgrade experiment program. For the electron cyclotron resonance heating, an O-2 mode scheme is proposed, which is compatible with the expected high plasma densities. It may, however, suffer from incomplete single-pass absorption. The situation can be improved significantly by installing holographic mirrors on the inner column, which allow for a second pass of the unabsorbed fraction of the millimetre wave beam. Since the beam path in the plasma is subject to refraction, the beam position on the holographic mirror has to be controlled. Thermocouples built into the mirror surface are used for this purpose. As a protective measure, the tiles of the heat shield on the inner column were modified in order to increase the shielding against unabsorbed millimetre wave power.

Topside electron density at low latitudes

International Nuclear Information System (INIS)

Ezquer, R.G.; Cabrera, M.A.; Flores, R.F.; Mosert, M.

2002-01-01

The validity of IRI to predict the electron density at the topside electron density profile over the low latitude region is checked. The comparison with measurements obtained with the Taiyo satellite during low solar activity shows that, the disagreement between prediction and measurement is lower than 40% for 70% of considered cases. These IRI predictions are better than those obtained in a previous work at the southern peak of the equatorial anomaly for high solar activity. Additional studies for low solar activity, using ionosonde data as input parameters in the model, are needed in order to check if the observed deviations are due to the predicted peak characteristics or to the predicted shape of the topside profile. (author)

Nanographene charge trapping memory with a large memory window

International Nuclear Information System (INIS)

Meng, Jianling; Yang, Rong; Zhao, Jing; He, Congli; Wang, Guole; Shi, Dongxia; Zhang, Guangyu

2015-01-01

Nanographene is a promising alternative to metal nanoparticles or semiconductor nanocrystals for charge trapping memory. In general, a high density of nanographene is required in order to achieve high charge trapping capacity. Here, we demonstrate a strategy of fabrication for a high density of nanographene for charge trapping memory with a large memory window. The fabrication includes two steps: (1) direct growth of continuous nanographene film; and (2) isolation of the as-grown film into high-density nanographene by plasma etching. Compared with directly grown isolated nanographene islands, abundant defects and edges are formed in nanographene under argon or oxygen plasma etching, i.e. more isolated nanographene islands are obtained, which provides more charge trapping sites. As-fabricated nanographene charge trapping memory shows outstanding memory properties with a memory window as wide as ∼9 V at a relative low sweep voltage of ±8 V, program/erase speed of ∼1 ms and robust endurance of >1000 cycles. The high-density nanographene charge trapping memory provides an outstanding alternative for downscaling technology beyond the current flash memory. (paper)

High density data recording for SSCL linac

International Nuclear Information System (INIS)

VanDeusen, A.L.; Crist, C.

1993-01-01

The Superconducting Super Collider Laboratory and AlliedSignal Aerospace have collaboratively developed a high density data monitoring system for beam diagnostic activities. The 128 channel data system is based on a custom multi-channel high speed digitizer card for the VXI bus. The card is referred to as a Modular Input VXI (MIX) digitizer. Multiple MIX cards are used in the complete system to achieve the necessary high channel density requirements. Each MIX digitizer card also contains programmable signal conditioning, and enough local memory to complete an entire beam scan without assistance from the host processor

Online learning from input versus offline memory evolution in adult word learning: effects of neighborhood density and phonologically related practice.

Science.gov (United States)

Storkel, Holly L; Bontempo, Daniel E; Pak, Natalie S

2014-10-01

In this study, the authors investigated adult word learning to determine how neighborhood density and practice across phonologically related training sets influence online learning from input during training versus offline memory evolution during no-training gaps. Sixty-one adults were randomly assigned to learn low- or high-density nonwords. Within each density condition, participants were trained on one set of words and then were trained on a second set of words, consisting of phonological neighbors of the first set. Learning was measured in a picture-naming test. Data were analyzed using multilevel modeling and spline regression. Steep learning during input was observed, with new words from dense neighborhoods and new words that were neighbors of recently learned words (i.e., second-set words) being learned better than other words. In terms of memory evolution, large and significant forgetting was observed during 1-week gaps in training. Effects of density and practice during memory evolution were opposite of those during input. Specifically, forgetting was greater for high-density and second-set words than for low-density and first-set words. High phonological similarity, regardless of source (i.e., known words or recent training), appears to facilitate online learning from input but seems to impede offline memory evolution.

Ultra-High Density Electron Beams for Beam Radiation and Beam Plasma Interaction

CERN Document Server

Anderson, Scott; Frigola, Pedro; Gibson, David J; Hartemann, Fred V; Jacob, Jeremy S; Lim, Jae; Musumeci, Pietro; Rosenzweig, James E; Travish, Gil; Tremaine, Aaron M

2005-01-01

Current and future applications of high brightness electron beams, which include advanced accelerators such as the plasma wake-field accelerator (PWFA) and beam-radiation interactions such as inverse-Compton scattering (ICS), require both transverse and longitudinal beam sizes on the order of tens of microns. Ultra-high density beams may be produced at moderate energy (50 MeV) by compression and subsequent strong focusing of low emittance, photoinjector sources. We describe the implementation of this method used at LLNL's PLEIADES ICS x-ray source in which the photoinjector-generated beam has been compressed to 300 fsec duration using the velocity bunching technique and focused to 20 μm rms size using an extremely high gradient, permanent magnet quadrupole (PMQ) focusing system.

Electron density interferometry measurement in laser-matter interaction

International Nuclear Information System (INIS)

Popovics-Chenais, C.

1981-05-01

This work is concerned with the laser-interferometry measurement of the electronic density in the corona and the conduction zone external part. Particularly, it is aimed at showing up density gradients and at their space-time localization. The first chapter recalls the density profile influence on the absorption principal mechanisms and the laser energy transport. In chapter two, the numerical and analytical hydrodynamic models describing the density profile are analysed. The influence on the density profile of the ponderomotive force associated to high oscillating electric fields is studied, together with the limited thermal conduction and suprathermal electron population. The mechanism action, in our measurement conditions, is numerically simulated. Calculations are made with experimental parameters. The measurement interaction conditions, together with the diagnostic method by high resolution laser interferometry are detailed. The results are analysed with the help of numerical simulation which is the experiment modeling. An overview of the mechanisms shown up by interferometric measurements and their correlation with other diagnostics is the conclusion of this work [fr

Sleep Spindle Density Predicts the Effect of Prior Knowledge on Memory Consolidation

Science.gov (United States)

Lambon Ralph, Matthew A.; Kempkes, Marleen; Cousins, James N.; Lewis, Penelope A.

2016-01-01

Information that relates to a prior knowledge schema is remembered better and consolidates more rapidly than information that does not. Another factor that influences memory consolidation is sleep and growing evidence suggests that sleep-related processing is important for integration with existing knowledge. Here, we perform an examination of how sleep-related mechanisms interact with schema-dependent memory advantage. Participants first established a schema over 2 weeks. Next, they encoded new facts, which were either related to the schema or completely unrelated. After a 24 h retention interval, including a night of sleep, which we monitored with polysomnography, participants encoded a second set of facts. Finally, memory for all facts was tested in a functional magnetic resonance imaging scanner. Behaviorally, sleep spindle density predicted an increase of the schema benefit to memory across the retention interval. Higher spindle densities were associated with reduced decay of schema-related memories. Functionally, spindle density predicted increased disengagement of the hippocampus across 24 h for schema-related memories only. Together, these results suggest that sleep spindle activity is associated with the effect of prior knowledge on memory consolidation. SIGNIFICANCE STATEMENT Episodic memories are gradually assimilated into long-term memory and this process is strongly influenced by sleep. The consolidation of new information is also influenced by its relationship to existing knowledge structures, or schemas, but the role of sleep in such schema-related consolidation is unknown. We show that sleep spindle density predicts the extent to which schemas influence the consolidation of related facts. This is the first evidence that sleep is associated with the interaction between prior knowledge and long-term memory formation. PMID:27030764

Hydrodynamic perspective on memory in time-dependent density-functional theory

International Nuclear Information System (INIS)

Thiele, M.; Kuemmel, S.

2009-01-01

The adiabatic approximation of time-dependent density-functional theory is studied in the context of nonlinear excitations of two-electron singlet systems. We compare the exact time evolution of these systems to the adiabatically exact one obtained from time-dependent Kohn-Sham calculations relying on the exact ground-state exchange-correlation potential. Thus, we can show under which conditions the adiabatic approximation breaks down and memory effects become important. The hydrodynamic formulation of quantum mechanics allows us to interpret these results and relate them to dissipative effects in the Kohn-Sham system. We show how the breakdown of the adiabatic approximation can be inferred from the rate of change of the ground-state noninteracting kinetic energy.

Fingerprint-based structure retrieval using electron density.

Science.gov (United States)

Yin, Shuangye; Dokholyan, Nikolay V

2011-03-01

We present a computational approach that can quickly search a large protein structural database to identify structures that fit a given electron density, such as determined by cryo-electron microscopy. We use geometric invariants (fingerprints) constructed using 3D Zernike moments to describe the electron density, and reduce the problem of fitting of the structure to the electron density to simple fingerprint comparison. Using this approach, we are able to screen the entire Protein Data Bank and identify structures that fit two experimental electron densities determined by cryo-electron microscopy. Copyright © 2010 Wiley-Liss, Inc.

Analytical thermal modelling of multilayered active embedded chips into high density electronic board

Directory of Open Access Journals (Sweden)

Monier-Vinard Eric

2013-01-01

Full Text Available The recent Printed Wiring Board embedding technology is an attractive packaging alternative that allows a very high degree of miniaturization by stacking multiple layers of embedded chips. This disruptive technology will further increase the thermal management challenges by concentrating heat dissipation at the heart of the organic substrate structure. In order to allow the electronic designer to early analyze the limits of the power dissipation, depending on the embedded chip location inside the board, as well as the thermal interactions with other buried chips or surface mounted electronic components, an analytical thermal modelling approach was established. The presented work describes the comparison of the analytical model results with the numerical models of various embedded chips configurations. The thermal behaviour predictions of the analytical model, found to be within ±10% of relative error, demonstrate its relevance for modelling high density electronic board. Besides the approach promotes a practical solution to study the potential gain to conduct a part of heat flow from the components towards a set of localized cooled board pads.

The high density and high βpol disruption mechanism on TFTR

International Nuclear Information System (INIS)

Fredrickson, E.D.; Manickam, J.; McGuire, K.M.; Monticello, D.; Nagayama, Y.; Park, W.; Taylor, G.

1992-01-01

Studies of disruptions on TFTR have been extended to include high density disruptions as well as the high β pol disruptions. The data strongly suggests that the (m,n)=(1,1) mode plays an important role in both types of disruptions. Further, for the first time, it is unambiguously shown, using a fast electron cyclotron emission (ECE) instrument for the electron temperature profile measurements, that the (m,n)=(1,1) precursor to the high density disruptions has a 'cold bubble' structure. The precursor to the major disruption at high density resembles the 'vacuum bubble' model of disruptions first proposed by Kadomtsev and Pogutse. (author) 2 refs., 2 figs

Solid-state Memory on Flexible Silicon for Future Electronic Applications

KAUST Repository

Ghoneim, Mohamed

2016-11-01

Advancements in electronics research triggered a vision of a more connected world, touching new unprecedented fields to improve the quality of our lives. This vision has been fueled by electronic giants showcasing flexible displays for the first time in consumer electronics symposiums. Since then, the scientific and research communities partook on exploring possibilities for making flexible electronics. Decades of research have revealed many routes to flexible electronics, lots of opportunities and challenges. In this work, we focus on our contributions towards realizing a complimentary approach to flexible inorganic high performance electronic memories on silicon. This approach provides a straight forward method for capitalizing on the existing well-established semiconductor infrastructure, standard processes and procedures, and collective knowledge. Ultimately, we focus on understanding the reliability and functionality anomalies in flexible electronics and flexible solid state memory built using the flexible silicon platform. The results of the presented studies show that: (i) flexible devices fabricated using etch-protect-release approach (with trenches included in the active area) exhibit ~19% lower safe operating voltage compared to their bulk counterparts, (ii) they can withstand prolonged bending duration (static stress) but are prone to failure under dynamic stress as in repeated bending and re-flattening, (iii) flexible 3D FinFETs exhibit ~10% variation in key properties when exposed to out-of-plane bending stress and out-of-plane stress does not resemble the well-studied in-plane stress used in strain engineering, (iv) resistive memories can be achieved on flexible silicon and their basic resistive property is preserved but other memory functionalities (retention, endurance, speed, memory window) requires further investigations, (v) flexible silicon based PZT ferroelectric capacitors exhibit record polarization, capacitance, and endurance (1 billion

Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliability

Energy Technology Data Exchange (ETDEWEB)

Fan, Yang-Shun [Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China); Liu, Po-Tsun, E-mail: ptliu@mail.nctu.edu.tw [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China); Hsu, Ching-Hui [Department of Photonics and Display Institute, National Chiao Tung University, Hsinchu 30010, Taiwan, ROC (China)

2013-12-31

Recently, non-volatile memory (NVM) has been widely used in electronic devices. Nowadays, the prevailing NVM is Flash memory. However, it is generally believed that the conventional Flash memory will approach its scaling limit within about a decade. The resistive random access memory (RRAM) is emerging as one of the potential candidates for future memory replacement because of its high storage density, low power consumption as well as simple structure. The purpose of this work is to develop a reliable a-InGaZnO based resistive switching memory. We investigate the resistive switching characteristics of TiN/Ti/IGZO/Pt structure and TiN/IGZO/Pt structure. The device with TiN/Ti/IGZO/Pt structure exhibits stable bipolar resistive switching. The impact of inserting a Ti interlayer is studied by material analyses. The device shows excellent resistive switching properties. For example, the DC sweep endurance can achieve over 1000 times; and the pulse induced switching cycles can reach at least 10,000 times. Furthermore, the impact of different sputtering ambience, the variable temperature measurement, and the conduction mechanisms are also investigated. According to our experiments, we propose a model to explain the resistive switching phenomenon observed in our devices.

Techniques to reduce memory requirements for coupled photon-electron transport

International Nuclear Information System (INIS)

Turcksin, Bruno; Ragusa, Jean; Morel, Jim

2011-01-01

In this work, we present two methods to decrease memory needs while solving the photon- electron transport equation. The coupled transport of electrons and photons is of importance in radiotherapy because it describes the interactions of X-rays with matter. One of the issues of discretized electron transport is that the electron scattering is highly forward peaked. A common approximation is to represent the peak in the scattering cross section by a Dirac distribution. This is convenient, but the integration over all angles of this distribution requires the use of Galerkin quadratures. By construction these quadratures impose that the number of flux moments be equal to the number of directions (number of angular fluxes), which is very demanding in terms of memory. In this study, we show that even if the number of moments is not as large as the number of directions, an accurate solution can be obtained when using Galerkin quadratures. Another method to decrease the memory needs involves choosing an appropriate reordering of the energy groups. We show in this paper that an appropriate alternation of photons/electrons groups allows to rewrite one transport problem of n groups as gcd successive transport problems of n/gcd groups where gcd is the greatest common divisor between the number of photon groups and the number of electron groups. (author)

Electronic and Optical Properties of Sodium Niobate: A Density Functional Theory Study

Directory of Open Access Journals (Sweden)

Daniel Fritsch

2018-01-01

Full Text Available In recent years, much effort has been devoted to replace the most commonly used piezoelectric ceramic lead zirconate titanate Pb[ZrxTi1−x]O3 (PZT with a suitable lead-free alternative for memory or piezoelectric applications. One possible alternative to PZT is sodium niobate as it exhibits electrical and mechanical properties that make it an interesting material for technological applications. The high-temperature simple cubic perovskite structure undergoes a series of structural phase transitions with decreasing temperature. However, particularly the phases at room temperature and below are not yet fully characterised and understood. Here, we perform density functional theory calculations for the possible phases at room temperature and below and report on the structural, electronic, and optical properties of the different phases in comparison to experimental findings.

Single-Readout High-Density Memristor Crossbar

KAUST Repository

Zidan, M. A.

2016-01-07

High-density memristor-crossbar architecture is a very promising technology for future computing systems. The simplicity of the gateless-crossbar structure is both its principal advantage and the source of undesired sneak-paths of current. This parasitic current could consume an enormous amount of energy and ruin the readout process. We introduce new adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer-memory system to address the sneak-paths problem. The proposed methods require a single memory access per pixel for an array readout. Besides, the memristive crossbar consumes an order of magnitude less power than state-of-the-art readout techniques.

Single-Readout High-Density Memristor Crossbar

KAUST Repository

Zidan, M. A.; Omran, Hesham; Naous, Rawan; Salem, Ahmed Sultan; Fahmy, H. A. H.; Lu, W. D.; Salama, Khaled N.

2016-01-01

High-density memristor-crossbar architecture is a very promising technology for future computing systems. The simplicity of the gateless-crossbar structure is both its principal advantage and the source of undesired sneak-paths of current. This parasitic current could consume an enormous amount of energy and ruin the readout process. We introduce new adaptive-threshold readout techniques that utilize the locality and hierarchy properties of the computer-memory system to address the sneak-paths problem. The proposed methods require a single memory access per pixel for an array readout. Besides, the memristive crossbar consumes an order of magnitude less power than state-of-the-art readout techniques.

A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory

International Nuclear Information System (INIS)

Qiao Fengying; Pan Liyang; Wu Dong; Liu Lifang; Xu Jun

2014-01-01

In order to minimize leakage current increase under total ionizing dose (TID) radiation in high density memory circuits, a new isolation technique, combining deep trench isolation (DTI) between the wells, local oxidation of silicon (LOCOS) isolation between the devices within the well, and a P-diffused area in order to limit leakage at the isolation edge is implemented in partly-depleted silicon-on-insulator (PD-SOI) technology. This radiation hardening technique can minimize the layout area by more than 60%, and allows flexible placement of the body contact. Radiation hardened transistors and 256 Kb flash memory chips are designed and fabricated in a 0.6 μm PD-SOI process. Experiments show that no obvious increase in leakage current is observed for single transistors under 1 Mrad(Si) radiation, and that the 256 Kb memory chip still functions well after a TID of 100 krad(Si), with only 50% increase of the active power consumption in read mode. (semiconductor devices)

Statistical theory of electron densities

International Nuclear Information System (INIS)

Pratt, L.R.; Hoffman, G.G.; Harris, R.A.

1988-01-01

An optimized Thomas--Fermi theory is proposed which retains the simplicity of the original theory and is a suitable reference theory for Monte Carlo density functional treatments of condensed materials. The key ingredient of the optimized theory is a neighborhood sampled potential which contains effects of the inhomogeneities in the one-electron potential. In contrast to the traditional Thomas--Fermi approach, the optimized theory predicts a finite electron density in the vicinity of a nucleus. Consideration of the example of an ideal electron gas subject to a central Coulomb field indicates that implementation of the approach is straightforward. The optimized theory is found to fail completely when a classically forbidden region is approached. However, these circumstances are not of primary interest for calculations of interatomic forces. It is shown how the energy functional of the density may be constructed by integration of a generalized Hellmann--Feynman relation. This generalized Hellmann--Feynman relation proves to be equivalent to the variational principle of density functional quantum mechanics, and, therefore, the present density theory can be viewed as a variational consequence of the constructed energy functional

Integration of SrBi2Ta2O9 thin films for high density ferroelectric random access memory

Science.gov (United States)

Wouters, D. J.; Maes, D.; Goux, L.; Lisoni, J. G.; Paraschiv, V.; Johnson, J. A.; Schwitters, M.; Everaert, J.-L.; Boullart, W.; Schaekers, M.; Willegems, M.; Vander Meeren, H.; Haspeslagh, L.; Artoni, C.; Caputa, C.; Casella, P.; Corallo, G.; Russo, G.; Zambrano, R.; Monchoix, H.; Vecchio, G.; Van Autryve, L.

2006-09-01

Ferroelectric random access memory (FeRAM) is an attractive candidate technology for embedded nonvolatile memory, especially in applications where low power and high program speed are important. Market introduction of high-density FeRAM is, however, lagging behind standard complementary metal-oxide semiconductor (CMOS) because of the difficult integration technology. This paper discusses the major integration issues for high-density FeRAM, based on SrBi2Ta2O9 (strontium bismuth tantalate or SBT), in relation to the fabrication of our stacked cell structure. We have worked in the previous years on the development of SBT-FeRAM integration technology, based on a so-called pseudo-three-dimensional (3D) cell, with a capacitor that can be scaled from quasi two-dimensional towards a true three-dimensional capacitor where the sidewalls will importantly contribute to the signal. In the first phase of our integration development, we integrated our FeRAM cell in a 0.35μm CMOS technology. In a second phase, then, possibility of scaling of our cell is demonstrated in 0.18μm technology. The excellent electrical and reliability properties of the small integrated ferroelectric capacitors prove the feasibility of the technology, while the verification of the potential 3D effect confirms the basic scaling potential of our concept beyond that of the single-mask capacitor. The paper outlines the different material and technological challenges, and working solutions are demonstrated. While some issues are specific to our own cell, many are applicable to different stacked FeRAM cell concepts, or will become more general concerns when more developments are moving into 3D structures.

Determination of Jupiter's electron density profile from plasma wave observations

International Nuclear Information System (INIS)

Gurnett, D.A.; Scarf, F.L.; Kurth, W.S.; Shaw, R.R.; Poynter, R.L.

1981-01-01

This paper summarizes the electron density measurements obtained in the Jovian magnetosphere from the plasma wave instruments on the Voyager 1 and 2 spacecraft. Three basic techniques are discussed for determining the electron density: (1) local measurements from the low-frequency cutoff of continuum radiation, (2) local measurements from the frequency of upper hybrid resonance emissions, and (3) integral measurements from the dispersion of whistlers. The limitations and advantages of each technique are critically reviewed. In all cases the electron densities are unaffected by spacecraft charging or sheath effects, which makes these measurements of particular importance for verifying in situ plasma and low-energy charged particle measurments. In the outer regions of the dayside magnetosphere, beyond about 40 R/sub J/, the electron densities range from about 3 x 10 -3 to 3 x 10 -2 cm -3 . On Voyager 2, several brief excursions apparently occurred into the low-density region north of the plasma sheet with densities less than 10 -3 cm -3 . Approaching the planet the electron density gradually increases, with the plasma frequency extending above the frequency range of the plasma wave instrument (56 kHz, or about 38 electrons cm -3 ) inside of about 8 R/sub J/. Within the high-density region of the Io plasma torus, whistlers provide measurements of the north-south scale height of the plasma torus, with scale heights ranging from about 0.9 to 2.5 R/sub J/

Injection of auxiliary electrons for increasing the plasma density in highly charged and high intensity ion sources

Energy Technology Data Exchange (ETDEWEB)

Odorici, F., E-mail: fabrizio.odorici@bo.infn.it; Malferrari, L.; Montanari, A. [INFN—Bologna, Viale B. Pichat, 6/2, 40127 Bologna (Italy); Rizzoli, R. [INFN—Bologna, Viale B. Pichat, 6/2, 40127 Bologna (Italy); CNR–Istituto per la Microelettronica ed i Microsistemi, Via Gobetti 101, 40129 Bologna (Italy); Mascali, D.; Castro, G.; Celona, L.; Gammino, S.; Neri, L. [INFN–Laboratori Nazionali del Sud, Via S. Sofia 62, 95125 Catania (Italy)

2016-02-15

Different electron guns based on cold- or hot-cathode technologies have been developed since 2009 at INFN for operating within ECR plasma chambers as sources of auxiliary electrons, with the aim of boosting the source performances by means of a higher plasma lifetime and density. Their application to microwave discharge ion sources, where plasma is not confined, has required an improvement of the gun design, in order to “screen” the cathode from the plasma particles. Experimental tests carried out on a plasma reactor show a boost of the plasma density, ranging from 10% to 90% when the electron guns are used, as explained by plasma diffusion models.

Injection of auxiliary electrons for increasing the plasma density in highly charged and high intensity ion sources.

Science.gov (United States)

Odorici, F; Malferrari, L; Montanari, A; Rizzoli, R; Mascali, D; Castro, G; Celona, L; Gammino, S; Neri, L

2016-02-01

Different electron guns based on cold- or hot-cathode technologies have been developed since 2009 at INFN for operating within ECR plasma chambers as sources of auxiliary electrons, with the aim of boosting the source performances by means of a higher plasma lifetime and density. Their application to microwave discharge ion sources, where plasma is not confined, has required an improvement of the gun design, in order to "screen" the cathode from the plasma particles. Experimental tests carried out on a plasma reactor show a boost of the plasma density, ranging from 10% to 90% when the electron guns are used, as explained by plasma diffusion models.

Lanthanum Gadolinium Oxide: A New Electronic Device Material for CMOS Logic and Memory Devices

Directory of Open Access Journals (Sweden)

Shojan P. Pavunny

2014-03-01

Full Text Available A comprehensive study on the ternary dielectric, LaGdO3, synthesized and qualified in our laboratory as a novel high-k dielectric material for logic and memory device applications in terms of its excellent features that include a high linear dielectric constant (k of ~22 and a large energy bandgap of ~5.6 eV, resulting in sufficient electron and hole band offsets of ~2.57 eV and ~1.91 eV, respectively, on silicon, good thermal stability with Si and lower gate leakage current densities within the International Technology Roadmap for Semiconductors (ITRS specified limits at the sub-nanometer electrical functional thickness level, which are desirable for advanced complementary metal-oxide-semiconductor (CMOS, bipolar (Bi and BiCMOS chips applications, is presented in this review article.

Investigation of the Electron Acceleration by a High-Power Laser and a Density-Tapered Mixed-Gas Cell

Science.gov (United States)

Kim, Jinju; Phung, Vanessa L. J.; Kim, Minseok; Hur, Min-Sup; Suk, Hyyong

2017-10-01

Plasma-based accelerators can generate about 1000 times stronger acceleration field compared with RF-based conventional accelerators, which can be done by high power laser and plasma. There are many issues in this research and one of them is development of a good plasma source for higher electron beam energy. For this purpose, we are investigating a special type of plasma source, which is a density-tapered gas cell with a mixed-gas for easy injection. By this type of special gas cell, we expect higher electron beam energies with easy injection in the wakefield. In this poster, some experimental results for electron beam generation with the density-tapered mixed-gas cell are presented. In addition to the experimental results, CFD (Computational-Fluid-Dynamics) and PIC (Particle-In-Cell) simulation results are also presented for comparison studies.

Electron heating caused by parametrically driven turbulence near the critical density

International Nuclear Information System (INIS)

Mizuno, K.; DeGroot, J.S.; Estabrook, K.G.

1986-01-01

Microwave-driven experiments and particle simulation calculations are presented that model s-polarized laser light incident on a pellet. In the microwave experiments, the incident microwaves are observed to decay into ion and electron waves near the critical density if the microwave power is above a well-defined threshold. Significant absorption, thermal electron heating, and hot electron generation are observed for microwave powers above a few times threshold. Strong absorption, strong profile modification, strongly heated hot electrons with a Maxwellian distribution, a hot-electron temperature that increases slowly with power, and a hot-electron density that is almost constant, are all observed in both the microwave experiments and simulation calculations for high powers. In addition, the thermal electrons are strongly heated for high powers in the microwave experiments

Solar corona electron density distribution

International Nuclear Information System (INIS)

Esposito, P.B.; Edenhofer, P.; Lueneburg, E.

1980-01-01

Three and one-half months of single-frequency (f= 0 2.2 x 10 9 Hz) time delay data (earth-to-spacecraft and return signal travel time) were acquired from the Helios 2 spacecraft around the time of its solar occupation (May 16, 1976). Following the determination of the spacecraft trajectory the excess time delay due to the integrated effect of free electrons along the signal's ray path could be separated and modeled. An average solar corona, equatorial, electron density profile, during solar minimum, was deduced from time delay measurements acquired within 5--60 solar radii (R/sub S/) of the sun. As a point of reference, at 10 R/sub S/ from the sun we find an average electron density of 4500 el cm -3 . However, there appears to be an asymmtry in the electron density as the ray path moved from the west (preoccultation) to east (post-occulation) solar limb. This may be related to the fact that during entry into occulation the heliographic latitude of the ray path (at closes approach to the sun) was about 6 0 , whereas during exit it became -7 0 . The Helios electron density model is compared with similar models deduced from a variety of different experimental techniques. Within 5--20 R/sub S/ of the sun the models separate according to solar minimum or maximum conditions; however, anomalies are evident

Thermal and optical excitation of trapped electrons in high-density polyethylene (HDPE) studied through positron annihilation

International Nuclear Information System (INIS)

Nahid, F.; Zhang, J.D.; Yu, T.F.; Ling, C.C.; Fung, S.; Beling, C.D.

2011-01-01

Positronium (Ps) formation in high-density polyethylene (HDPE) has been studied below the glass transition temperature. The formation probability increases with positron irradiation time due to an increasing number of inter-track trapped electrons becoming available for positron capture. The temperature variation of the saturated Ps level is discussed in different models. The quenching of trapped electrons by light has been studied and the optical de-trapping cross-section for different photon energies has been estimated over the visible region.

High Power Density Power Electronic Converters for Large Wind Turbines

DEFF Research Database (Denmark)

Senturk, Osman Selcuk

. For these VSCs, high power density is required due to limited turbine nacelle space. Also, high reliability is required since maintenance cost of these remotely located wind turbines is quite high and these turbines operate under harsh operating conditions. In order to select a high power density and reliability......In large wind turbines (in MW and multi-MW ranges), which are extensively utilized in wind power plants, full-scale medium voltage (MV) multi-level (ML) voltage source converters (VSCs) are being more preferably employed nowadays for interfacing these wind turbines with electricity grids...... VSC solution for wind turbines, first, the VSC topology and the switch technology to be employed should be specified such that the highest possible power density and reliability are to be attained. Then, this qualitative approach should be complemented with the power density and reliability...

Predicting the Oxygen-Binding Properties of Platinum Nanoparticle Ensembles by Combining High-Precision Electron Microscopy and Density Functional Theory.

Science.gov (United States)

Aarons, Jolyon; Jones, Lewys; Varambhia, Aakash; MacArthur, Katherine E; Ozkaya, Dogan; Sarwar, Misbah; Skylaris, Chris-Kriton; Nellist, Peter D

2017-07-12

Many studies of heterogeneous catalysis, both experimental and computational, make use of idealized structures such as extended surfaces or regular polyhedral nanoparticles. This simplification neglects the morphological diversity in real commercial oxygen reduction reaction (ORR) catalysts used in fuel-cell cathodes. Here we introduce an approach that combines 3D nanoparticle structures obtained from high-throughput high-precision electron microscopy with density functional theory. Discrepancies between experimental observations and cuboctahedral/truncated-octahedral particles are revealed and discussed using a range of widely used descriptors, such as electron-density, d-band centers, and generalized coordination numbers. We use this new approach to determine the optimum particle size for which both detrimental surface roughness and particle shape effects are minimized.

Creation of excitations and defects in insulating materials by high-current-density electron beams of nanosecond pulse duration

International Nuclear Information System (INIS)

Vaisburd, D.I.; Evdokimov, K.E.

2005-01-01

The paper is concerned with fast and ultra-fast processes in insulating materials under the irradiation by a high-current-density electron beam of a nanosecond pulse duration. The inflation process induced by the interaction of a high-intensity electron beam with a dielectric is examined. The ''instantaneous'' distribution of non-ionizing electrons and holes is one of the most important stages of the process. Ionization-passive electrons and holes make the main contribution to many fast processes with a characteristic time in the range 10 -14 /10 -12 s: high-energy conductivity, intraband luminescence, etc. A technique was developed for calculation of the ''instantaneous'' distribution of non-ionizing electrons and holes in a dielectric prior to electron-phonon relaxation. The following experimental effects are considered: intraband luminescence, coexistence of intraband electron luminescence and band-to-band hole luminescence in CsI, high energy conductivity; generation of mechanical fields and their interaction with cracks and dislocations. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Probing the Milky Way electron density using multi-messenger astronomy

Science.gov (United States)

Breivik, Katelyn; Larson, Shane

2015-04-01

Multi-messenger observations of ultra-compact binaries in both gravitational waves and electromagnetic radiation supply highly complementary information, providing new ways of characterizing the internal dynamics of these systems, as well as new probes of the galaxy itself. Electron density models, used in pulsar distance measurements via the electron dispersion measure, are currently not well constrained. Simultaneous radio and gravitational wave observations of pulsars in binaries provide a method of measuring the average electron density along the line of sight to the pulsar, thus giving a new method for constraining current electron density models. We present this method and assess its viability with simulations of the compact binary component of the Milky Way using the public domain binary evolution code, BSE. This work is supported by NASA Award NNX13AM10G.

Electron density measurements during ion beam transport on Gamble II

International Nuclear Information System (INIS)

Weber, B.V.; Hinshelwood, D.D.; Neri, J.M.; Ottinger, P.F.; Rose, D.V.; Stephanakis, S.J.; Young, F.C.

1999-01-01

High-sensitivity laser interferometry was used to measure the electron density created when an intense proton beam (100 kA, 1 MeV, 50 ns) from the Gamble II generator was transported through low-pressure gas as part of a project investigating Self-Pinched Transport (SPT) of intense ion beams. This measurement is non-perturbing and sufficiently quantitative to allow benchmarking of codes (particularly IPROP) used to model beam-gas interaction and ion-beam transport. Very high phase sensitivity is required for this measurement. For example, a 100-kA, 1-MeV, 10-cm-radius proton beam with uniform current density has a line-integrated proton density equal to n b L = 3 x 10 13 cm -2 . An equal electron line-density, n e L = n b L, (expected for transport in vacuum) will be detected as a phase shift of the 1.064 microm laser beam of only 0.05degree, or an optical path change of 1.4 x 10 -4 waves (about the size of a hydrogen atom). The time-history of the line-integrated electron density, measured across a diameter of the transport chamber at 43 cm from the input aperture, starts with the proton arrival time and decays differently depending on the gas pressure. The gas conditions included vacuum (10 -4 Torr air), 30 to 220 mTorr He, and 1 Torr air. The measured densities vary by three orders of magnitude, from 10 13 to 10 16 cm -2 for the range of gas pressures investigated. In vacuum, the measured electron densities indicate only co-moving electrons (n e L approximately n b L). In He, when the gas pressure is sufficient for ionization by beam particles and SPT is observed, n e L increases to about 10 n b L. At even higher pressures where electrons contribute to ionization, even higher electron densities are observed with an ionization fraction of about 2%. The diagnostic technique as used on the SPT experiment will be described and a summary of the results will be given. The measurements are in reasonable agreement with theoretical predictions from the IPROP code

Geometrically necessary dislocation densities in olivine obtained using high-angular resolution electron backscatter diffraction

Energy Technology Data Exchange (ETDEWEB)

Wallis, David, E-mail: davidwa@earth.ox.ac.uk [Department of Earth Sciences, University of Oxford, South Parks Road, Oxford, Oxfordshire, OX1 3AN (United Kingdom); Hansen, Lars N. [Department of Earth Sciences, University of Oxford, South Parks Road, Oxford, Oxfordshire, OX1 3AN (United Kingdom); Ben Britton, T. [Department of Materials, Imperial College London, Royal School of Mines, Exhibition Road, London SW7 2AZ (United Kingdom); Wilkinson, Angus J. [Department of Materials, University of Oxford, Parks Road, Oxford, Oxfordshire, OX1 3PH (United Kingdom)

2016-09-15

Dislocations in geological minerals are fundamental to the creep processes that control large-scale geodynamic phenomena. However, techniques to quantify their densities, distributions, and types over critical subgrain to polycrystal length scales are limited. The recent advent of high-angular resolution electron backscatter diffraction (HR-EBSD), based on diffraction pattern cross-correlation, offers a powerful new approach that has been utilised to analyse dislocation densities in the materials sciences. In particular, HR-EBSD yields significantly better angular resolution (<0.01°) than conventional EBSD (~0.5°), allowing very low dislocation densities to be analysed. We develop the application of HR-EBSD to olivine, the dominant mineral in Earth's upper mantle by testing (1) different inversion methods for estimating geometrically necessary dislocation (GND) densities, (2) the sensitivity of the method under a range of data acquisition settings, and (3) the ability of the technique to resolve a variety of olivine dislocation structures. The relatively low crystal symmetry (orthorhombic) and few slip systems in olivine result in well constrained GND density estimates. The GND density noise floor is inversely proportional to map step size, such that datasets can be optimised for analysing either short wavelength, high density structures (e.g. subgrain boundaries) or long wavelength, low amplitude orientation gradients. Comparison to conventional images of decorated dislocations demonstrates that HR-EBSD can characterise the dislocation distribution and reveal additional structure not captured by the decoration technique. HR-EBSD therefore provides a highly effective method for analysing dislocations in olivine and determining their role in accommodating macroscopic deformation. - Highlights: • Lattice orientation gradients in olivine were measured using HR-EBSD. • The limited number of olivine slip systems enable simple least squares inversion for GND

Excess electron mobility in ethane. Density, temperature, and electric field effects

International Nuclear Information System (INIS)

Doeldissen, W.; Schmidt, W.F.; Bakale, G.

1980-01-01

The excess electron mobility in liquid ethane was measured under orthobaric conditions as a function of temperature and electric field strength up to the critical temperature at 305.33 K. The low field mobility was found to rise strongly with temperature and exhibits a maximum value of 44 cm 2 V -1 s -1 at 2 0 below the critical temperature. At temperatures above 260 K the electron drift velocity shows a sublinear field dependence at high values of the electric field strength. These observations lead to the supposition that in liquid ethane a transition from transport via localized states to transport in extended states occurs. Measurements were also performed in fluid ethane at densities from 2.4 to 12.45 mol L -1 and temperatures from 290 to 340 K. On isochores in the vicinity of the critical density, an increase of the low field mobility with temperature was observed. This effect was found to disappear both at low (rho = 2.4 mol L -1 ) and high densities (rho greater than or equal to 9.2 mol L -1 ). In this density range, a sublinear field dependence of the drift velocities at high field strengths was noted. The critical velocity associated with the appearance of hot electrons was observed to decrease with higher densities indicating a smaller fractional energy transfer in electron molecule collisions. A compilation of electron mobilities in gaseous and liquid ethane shows that, up to densitiesof rho = 9.5 mol L -1 , μ proportional to n -1 is fulfilled if temperature effects are ignored. At intermediate densities, 9 mol L -1 -1 , a density dependence of μ proportional to rho -5 is found followed by a stronger mobility decrease toward the triple point. Positive ion mobilities measured under orthobaric conditions followed Walden's rule

Feasibility Studies of the Two Filters Method in TJ-II for Electron Temperature Measurements in High Density Plasmas

International Nuclear Information System (INIS)

Baiao, D.; Medina, F.; Ochando, M.; Varandas, C.

2009-01-01

The TJ-II plasma soft X-ray emission was studied in order to establish an adequate setup for an electron temperature diagnostic suitable for high density, with spatial and temporal resolutions, based on the two-filters method. The preliminary experimental results reported were obtained with two diagnostics (an X-ray PHA based on a Ge detector and a tomography system) already installed in TJ-II stellarator. These results lead to the conclusion that the two-filters method was a suitable option for an electron temperature diagnostic for high-density plasmas in TJ-II. We present the design and fi rst results obtained with a prototype for the measurement of electron temperature in TJ-II plasmas heated with energetic neutral beams. This system consists in two AXUV20A detectors which measure the soft X-ray plasma emissivity trough beryllium filters of different thickness. From the two-filters technique it is possible to estimate the electron temperature. The analyses carried out allowed concluding which filter thicknesses are most suited for TJ-II plasmas, and enhanced the need of a computer code to simulate signals and plasma compositions. (Author) 7 refs.

Feasibility Studies of the Two Filters Method in TJ-II for Electron Temperature Measurements in High Density Plasmas

Energy Technology Data Exchange (ETDEWEB)

Baiao, D.; Medina, F.; Ochando, M.; Varandas, C.

2009-07-01

The TJ-II plasma soft X-ray emission was studied in order to establish an adequate setup for an electron temperature diagnostic suitable for high density, with spatial and temporal resolutions, based on the two-filters method. The preliminary experimental results reported were obtained with two diagnostics (an X-ray PHA based on a Ge detector and a tomography system) already installed in TJ-II stellarator. These results lead to the conclusion that the two-filters method was a suitable option for an electron temperature diagnostic for high-density plasmas in TJ-II. We present the design and fi rst results obtained with a prototype for the measurement of electron temperature in TJ-II plasmas heated with energetic neutral beams. This system consists in two AXUV20A detectors which measure the soft X-ray plasma emissivity trough beryllium filters of different thickness. From the two-filters technique it is possible to estimate the electron temperature. The analyses carried out allowed concluding which filter thicknesses are most suited for TJ-II plasmas, and enhanced the need of a computer code to simulate signals and plasma compositions. (Author) 7 refs.

Dependence of high density nitrogen-vacancy center ensemble coherence on electron irradiation doses and annealing time

Science.gov (United States)

Zhang, C.; Yuan, H.; Zhang, N.; Xu, L. X.; Li, B.; Cheng, G. D.; Wang, Y.; Gui, Q.; Fang, J. C.

2017-12-01

Negatively charged nitrogen-vacancy (NV-) center ensembles in diamond have proved to have great potential for use in highly sensitive, small-package solid-state quantum sensors. One way to improve sensitivity is to produce a high-density NV- center ensemble on a large scale with a long coherence lifetime. In this work, the NV- center ensemble is prepared in type-Ib diamond using high energy electron irradiation and annealing, and the transverse relaxation time of the ensemble—T 2—was systematically investigated as a function of the irradiation electron dose and annealing time. Dynamical decoupling sequences were used to characterize T 2. To overcome the problem of low signal-to-noise ratio in T 2 measurement, a coupled strip lines waveguide was used to synchronously manipulate NV- centers along three directions to improve fluorescence signal contrast. Finally, NV- center ensembles with a high concentration of roughly 1015 mm-3 were manipulated within a ~10 µs coherence time. By applying a multi-coupled strip-lines waveguide to improve the effective volume of the diamond, a sub-femtotesla sensitivity for AC field magnetometry can be achieved. The long-coherence high-density large-scale NV- center ensemble in diamond means that types of room-temperature micro-sized solid-state quantum sensors with ultra-high sensitivity can be further developed in the near future.

Rocket measurements of electron density irregularities during MAC/SINE

Science.gov (United States)

Ulwick, J. C.

1989-01-01

Four Super Arcas rockets were launched at the Andoya Rocket Range, Norway, as part of the MAC/SINE campaign to measure electron density irregularities with high spatial resolution in the cold summer polar mesosphere. They were launched as part of two salvos: the turbulent/gravity wave salvo (3 rockets) and the EISCAT/SOUSY radar salvo (one rocket). In both salvos meteorological rockets, measuring temperature and winds, were also launched and the SOUSY radar, located near the launch site, measured mesospheric turbulence. Electron density irregularities and strong gradients were measured by the rocket probes in the region of most intense backscatter observed by the radar. The electron density profiles (8 to 4 on ascent and 4 on descent) show very different characteristics in the peak scattering region and show marked spatial and temporal variability. These data are intercompared and discussed.

Detection of charge storage on molecular thin films of tris(8-hydroxyquinoline) aluminum (Alq3) by Kelvin force microscopy: a candidate system for high storage capacity memory cells.

Science.gov (United States)

Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir

2012-03-14

Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society

A real-space stochastic density matrix approach for density functional electronic structure.

Science.gov (United States)

Beck, Thomas L

2015-12-21

The recent development of real-space grid methods has led to more efficient, accurate, and adaptable approaches for large-scale electrostatics and density functional electronic structure modeling. With the incorporation of multiscale techniques, linear-scaling real-space solvers are possible for density functional problems if localized orbitals are used to represent the Kohn-Sham energy functional. These methods still suffer from high computational and storage overheads, however, due to extensive matrix operations related to the underlying wave function grid representation. In this paper, an alternative stochastic method is outlined that aims to solve directly for the one-electron density matrix in real space. In order to illustrate aspects of the method, model calculations are performed for simple one-dimensional problems that display some features of the more general problem, such as spatial nodes in the density matrix. This orbital-free approach may prove helpful considering a future involving increasingly parallel computing architectures. Its primary advantage is the near-locality of the random walks, allowing for simultaneous updates of the density matrix in different regions of space partitioned across the processors. In addition, it allows for testing and enforcement of the particle number and idempotency constraints through stabilization of a Feynman-Kac functional integral as opposed to the extensive matrix operations in traditional approaches.

Carbon nanomaterials for non-volatile memories

Science.gov (United States)

Ahn, Ethan C.; Wong, H.-S. Philip; Pop, Eric

2018-03-01

Carbon can create various low-dimensional nanostructures with remarkable electronic, optical, mechanical and thermal properties. These features make carbon nanomaterials especially interesting for next-generation memory and storage devices, such as resistive random access memory, phase-change memory, spin-transfer-torque magnetic random access memory and ferroelectric random access memory. Non-volatile memories greatly benefit from the use of carbon nanomaterials in terms of bit density and energy efficiency. In this Review, we discuss sp2-hybridized carbon-based low-dimensional nanostructures, such as fullerene, carbon nanotubes and graphene, in the context of non-volatile memory devices and architectures. Applications of carbon nanomaterials as memory electrodes, interfacial engineering layers, resistive-switching media, and scalable, high-performance memory selectors are investigated. Finally, we compare the different memory technologies in terms of writing energy and time, and highlight major challenges in the manufacturing, integration and understanding of the physical mechanisms and material properties.

The topology of the Coulomb potential density. A comparison with the electron density, the virial energy density, and the Ehrenfest force density.

Science.gov (United States)

Ferreira, Lizé-Mari; Eaby, Alan; Dillen, Jan

2017-12-15

The topology of the Coulomb potential density has been studied within the context of the theory of Atoms in Molecules and has been compared with the topologies of the electron density, the virial energy density and the Ehrenfest force density. The Coulomb potential density is found to be mainly structurally homeomorphic with the electron density. The Coulomb potential density reproduces the non-nuclear attractor which is observed experimentally in the molecular graph of the electron density of a Mg dimer, thus, for the first time ever providing an alternative and energetic foundation for the existence of this critical point. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

Density-dependent electron scattering in photoexcited GaAs

DEFF Research Database (Denmark)

Mics, Zoltán; D'’Angio, Andrea; Jensen, Søren A.

2013-01-01

—In a series of systematic optical pump - terahertz probe experiments we study the density-dependent electron scattering rate in photoexcited GaAs in a large range of carrier densities. The electron scattering time decreases by as much as a factor of 4, from 320 to 60 fs, as the electron density...

Transparent Memory For Harsh Electronics

KAUST Repository

Ho, C. H.

2017-03-14

As a new class of non-volatile memory, resistive random access memory (RRAM) offers not only superior electronic characteristics, but also advanced functionalities, such as transparency and radiation hardness. However, the environmental tolerance of RRAM is material-dependent, and therefore the materials used must be chosen carefully in order to avoid instabilities and performance degradation caused by the detrimental effects arising from environmental gases and ionizing radiation. In this work, we demonstrate that AlN-based RRAM displays excellent performance and environmental stability, with no significant degradation to the resistance ratio over a 100-cycle endurance test. Moreover, transparent RRAM (TRRAM) based on AlN also performs reliably under four different harsh environmental conditions and 2 MeV proton irradiation fluences, ranging from 1011 to 1015 cm-2. These findings not only provide a guideline for TRRAM design, but also demonstrate the promising applicability of AlN TRRAM for future transparent harsh electronics.

High current density ion source

International Nuclear Information System (INIS)

King, H.J.

1977-01-01

A high-current-density ion source with high total current is achieved by individually directing the beamlets from an electron bombardment ion source through screen and accelerator electrodes. The openings in these screen and accelerator electrodes are oriented and positioned to direct the individual beamlets substantially toward a focus point. 3 figures, 1 table

Properties of matter at ultra-high densities

International Nuclear Information System (INIS)

Banerjee, B.; Chitre, S.M.

1975-01-01

The recent discovery of pulsars and their subsequent identification with neutron stars has given a great impetus to the study of the behaviour of matter at ultra high densities. The object of these studies is to calculate the equation of state as a function of density. In this paper, the properties of electrically neutral, cold (T=0) matter at unusually high densities has been reviewed. The physics of the equation of state of such matter divides quite naturally in four density ranges. (i) At the very lowest densities the state of minimum energy is a lattice of 56 Fe atoms. This state persists upto 10 7 g/cm 3 . (ii) In the next density region the nuclei at the lattice sites become neutron rich because the high electron Fermi energy makes inverse beta decay possible. (iii) At a density 4.3 x 10 11 the nuclei become so neutron rich that the neutrons start 'dripping' out of the nuclei and form a gas. This density range is characterised by large, neutron-rich nuclei immersed in a neutron gas. (iv) At a density 2.4 x 10 14 g/cm 3 , the nuclei disappear and a fluid of uniform neutron matter with a small percentage of protons and electrons results. The above four density ranges have been discussed in detail as the equation of state is now well established upto the nuclear density 3 x 10 14 g/cm 3 . The problems of extending the equation of state beyond this density are also touched upon. (author)

Two-dimensional electron density characterisation of arc interruption phenomenon in current-zero phase

Science.gov (United States)

Inada, Yuki; Kamiya, Tomoki; Matsuoka, Shigeyasu; Kumada, Akiko; Ikeda, Hisatoshi; Hidaka, Kunihiko

2018-01-01

Two-dimensional electron density imaging over free burning SF6 arcs and SF6 gas-blast arcs was conducted at current zero using highly sensitive Shack-Hartmann type laser wavefront sensors in order to experimentally characterise electron density distributions for the success and failure of arc interruption in the thermal reignition phase. The experimental results under an interruption probability of 50% showed that free burning SF6 arcs with axially asymmetric electron density profiles were interrupted with a success rate of 88%. On the other hand, the current interruption of SF6 gas-blast arcs was reproducibly achieved under locally reduced electron densities and the interruption success rate was 100%.

Development and characterization of high temperature, high energy density dielectric materials to establish routes towards power electronics capacitive devices

Science.gov (United States)

Shay, Dennis P.

The maximum electrostatic energy density of a capacitor is a function of the relative permittivity (epsilonr) and the square of the dielectric breakdown strength (Eb). Currently, state-of-the art high temperature (>200 °C), SiC-based power electronics utilize CaZrO3-rich NP0/C0G-type capacitors, which have low relative permittivities of epsilonr ˜ 30-40, high breakdown strengths (> 1.0 MV/cm), and are chosen for their minimal change in energy storage with temperature. However, with operating temperatures exceeding the rated temperatures for such capacitors, there is an opportunity to develop new dielectric ceramics having higher energy densities and volumetric efficiencies at high temperatures (>200 °C) by utilizing higher permittivity dielectrics while maintaining high breakdown strengths via doping. The solid solution behavior of was characterized in order to determine the optimal composition for balancing permittivity and dielectric breakdown strength to obtain high energy densities at elevated temperatures. Characterization by X-ray diffraction (XRD) showed Vegard's law behavior across the solid solution with minimal 2nd phases. To determine a Ca(TixZr1-x)O3 composition that will also minimize electronic or band conduction, the optical properties of the Ca(TixZr1-x)O3 solid solution were investigated to identify a composition on the CaTiO3 - rich end of the solid solution with a large band gap. Both ultraviolet-visible diffuse reflectance spectroscopy (UV-Vis) and spectroscopic ellipsometry were utilized to determine the Ca(TixZr1-x)O3 band gaps and optical properties. The resistivity at 250 °C scaled with the band gap energy across the solid solution. Comparing the current-voltage (I--V) behavior at 250 °C for Ca(Tix-yMnyZr0.2)O3 (CTZ + Mn) where x = 0.7, 0.8, 0.9, and y = 0.005, it was found that the Ca(Ti 0.795Mn0.005Zr0.2)O3 composition showed the lowest current density and a decrease in current density of 5 orders of magnitude compared to the un

Characteristics of recycled and electron beam irradiated high density polyethylene samples

International Nuclear Information System (INIS)

Cardoso, Jessica R.; Gabriel, Leandro; Geraldo, Aurea B.C.; Moura, Eduardo

2015-01-01

Polymers modification by irradiation is a well-known process that allows degradation and cross-linking in concurrent events; this last is expected when an increase of mechanical properties is required. Actually, the interest of recycling and reuse of polymeric material is linked to the increase of plastics ending up in waste streams. Therefore, these both irradiation and recycling process may be conducted to allow a new use to this material that would be discarded by an improvement of its mechanical properties. In this work, the High Density Polyethylene (HDPE) matrix has been recycled five times from original substrate. The electron beam irradiation process was applied from 50 kGy to 200 kGy in both original and recycled samples; in this way, mechanical properties and thermal characteristics were evaluated. The results of applied process and material characterization are discussed. (author)

Characteristics of recycled and electron beam irradiated high density polyethylene samples

Energy Technology Data Exchange (ETDEWEB)

Cardoso, Jessica R.; Gabriel, Leandro; Geraldo, Aurea B.C.; Moura, Eduardo, E-mail: jrcardoso@ipen.br, E-mail: lgabriell@gmail.com, E-mail: ageraldo@ipen.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

2015-07-01

Polymers modification by irradiation is a well-known process that allows degradation and cross-linking in concurrent events; this last is expected when an increase of mechanical properties is required. Actually, the interest of recycling and reuse of polymeric material is linked to the increase of plastics ending up in waste streams. Therefore, these both irradiation and recycling process may be conducted to allow a new use to this material that would be discarded by an improvement of its mechanical properties. In this work, the High Density Polyethylene (HDPE) matrix has been recycled five times from original substrate. The electron beam irradiation process was applied from 50 kGy to 200 kGy in both original and recycled samples; in this way, mechanical properties and thermal characteristics were evaluated. The results of applied process and material characterization are discussed. (author)

Covariance and correlation estimation in electron-density maps.

Science.gov (United States)

Altomare, Angela; Cuocci, Corrado; Giacovazzo, Carmelo; Moliterni, Anna; Rizzi, Rosanna

2012-03-01

Quite recently two papers have been published [Giacovazzo & Mazzone (2011). Acta Cryst. A67, 210-218; Giacovazzo et al. (2011). Acta Cryst. A67, 368-382] which calculate the variance in any point of an electron-density map at any stage of the phasing process. The main aim of the papers was to associate a standard deviation to each pixel of the map, in order to obtain a better estimate of the map reliability. This paper deals with the covariance estimate between points of an electron-density map in any space group, centrosymmetric or non-centrosymmetric, no matter the correlation between the model and target structures. The aim is as follows: to verify if the electron density in one point of the map is amplified or depressed as an effect of the electron density in one or more other points of the map. High values of the covariances are usually connected with undesired features of the map. The phases are the primitive random variables of our probabilistic model; the covariance changes with the quality of the model and therefore with the quality of the phases. The conclusive formulas show that the covariance is also influenced by the Patterson map. Uncertainty on measurements may influence the covariance, particularly in the final stages of the structure refinement; a general formula is obtained taking into account both phase and measurement uncertainty, valid at any stage of the crystal structure solution.

High dislocation density of tin induced by electric current

International Nuclear Information System (INIS)

Liao, Yi-Han; Liang, Chien-Lung; Lin, Kwang-Lung; Wu, Albert T.

2015-01-01

A dislocation density of as high as 10 17 /m 2 in a tin strip, as revealed by high resolution transmission electron microscope, was induced by current stressing at 6.5 x 10 3 A/ cm 2 . The dislocations exist in terms of dislocation line, dislocation loop, and dislocation aggregates. Electron Backscattered Diffraction images reflect that the high dislocation density induced the formation of low deflection angle subgrains, high deflection angle Widmanstätten grains, and recrystallization. The recrystallization gave rise to grain refining

Rapid model building of beta-sheets in electron-density maps.

Science.gov (United States)

Terwilliger, Thomas C

2010-03-01

A method for rapidly building beta-sheets into electron-density maps is presented. beta-Strands are identified as tubes of high density adjacent to and nearly parallel to other tubes of density. The alignment and direction of each strand are identified from the pattern of high density corresponding to carbonyl and C(beta) atoms along the strand averaged over all repeats present in the strand. The beta-strands obtained are then assembled into a single atomic model of the beta-sheet regions. The method was tested on a set of 42 experimental electron-density maps at resolutions ranging from 1.5 to 3.8 A. The beta-sheet regions were nearly completely built in all but two cases, the exceptions being one structure at 2.5 A resolution in which a third of the residues in beta-sheets were built and a structure at 3.8 A in which under 10% were built. The overall average r.m.s.d. of main-chain atoms in the residues built using this method compared with refined models of the structures was 1.5 A.

CREB regulates spine density of lateral amygdala neurons: implications for memory allocation

Directory of Open Access Journals (Sweden)

Derya eSargin

2013-12-01

Full Text Available Neurons may compete against one another for integration into a memory trace. Specifically, neurons in the lateral nucleus of the amygdala with relatively higher levels of CREB seem to be preferentially allocated to a fear memory trace, while neurons with relatively decreased CREB function seem to be excluded from a fear memory trace. CREB is a ubiquitous transcription factor that modulates many diverse cellular processes, raising the question as to which of these CREB-mediated processes underlie memory allocation. CREB is implicated in modulating dendritic spine number and morphology. As dendritic spines are intimately involved in memory formation, we investigated whether manipulations of CREB function alter spine number or morphology of neurons at the time of fear conditioning. We used viral vectors to manipulate CREB function in the lateral amygdala principal neurons in mice maintained in their homecages. At the time that fear conditioning normally occurs, we observed that neurons with high levels of CREB had more dendritic spines, while neurons with low CREB function had relatively fewer spines compared to control neurons. These results suggest that the modulation of spine density provides a potential mechanism for preferential allocation of a subset of neurons to the memory trace.

Wigner-like crystallization of Anderson-localized electron systems with low electron densities

CERN Document Server

Slutskin, A A; Pepper, M

2002-01-01

We consider an electron system under conditions of strong Anderson localization, taking into account interelectron long-range Coulomb repulsion. We establish that at sufficiently low electron densities and sufficiently low temperatures the Coulomb electron interaction brings about ordering of the Anderson-localized electrons into a structure that is close to an ideal (Wigner) crystal lattice, provided the dimension of the system is > 1. This Anderson-Wigner glass (AWG) is a new macroscopic electron state that, on the one hand, is beyond the conventional Fermi glass concept, and on the other hand, qualitatively differs from the known 'plain' Wigner glass (inherent in self-localized electron systems) in that the random slight electron displacements from the ideal crystal sites essentially depend on the electron density. With increasing electron density the AWG is found to turn into the plain Wigner glass or Fermi glass, depending on the width of the random spread of the electron levels. It is shown that the res...

Optical-electronic shape recognition system based on synergetic associative memory

Science.gov (United States)

Gao, Jun; Bao, Jie; Chen, Dingguo; Yang, Youqing; Yang, Xuedong

2001-04-01

This paper presents a novel optical-electronic shape recognition system based on synergetic associative memory. Our shape recognition system is composed of two parts: the first one is feature extraction system; the second is synergetic pattern recognition system. Hough transform is proposed for feature extraction of unrecognized object, with the effects of reducing dimensions and filtering for object distortion and noise, synergetic neural network is proposed for realizing associative memory in order to eliminate spurious states. Then we adopt an approach of optical- electronic realization to our system that can satisfy the demands of real time, high speed and parallelism. In order to realize fast algorithm, we replace the dynamic evolution circuit with adjudge circuit according to the relationship between attention parameters and order parameters, then implement the recognition of some simple images and its validity is proved.

A tunable electron beam source using trapping of electrons in a density down-ramp in laser wakefield acceleration.

Science.gov (United States)

Ekerfelt, Henrik; Hansson, Martin; Gallardo González, Isabel; Davoine, Xavier; Lundh, Olle

2017-09-25

One challenge in the development of laser wakefield accelerators is to demonstrate sufficient control and reproducibility of the parameters of the generated bunches of accelerated electrons. Here we report on a numerical study, where we demonstrate that trapping using density down-ramps allows for tuning of several electron bunch parameters by varying the properties of the density down-ramp. We show that the electron bunch length is determined by the difference in density before and after the ramp. Furthermore, the transverse emittance of the bunch is controlled by the steepness of the ramp. Finally, the amount of trapped charge depends both on the density difference and on the steepness of the ramp. We emphasize that both parameters of the density ramp are feasible to vary experimentally. We therefore conclude that this tunable electron accelerator makes it suitable for a wide range of applications, from those requiring short pulse length and low emittance, such as the free-electron lasers, to those requiring high-charge, large-emittance bunches to maximize betatron X-ray generation.

Radiation effect test on ADC/DAC and high density memory devices with 60Co γ-rays

International Nuclear Information System (INIS)

Xing Kefei; Wang Yueke; Pan Huafeng

2006-01-01

A test platform was constructed for 60 Co γ-ray irradiation experiment of microelectronics, with the aid of computer and a FPGA module. The tested sample devices included analog-to-digital converter AD10465, digital-to-analog converter AD9857, high density Flash memory MEF64M16 and anti-fused PROM XQR17V16, which are used in signal processing module in spaceborne systems. Evaluations were made on their ability of resisting the total dose based on the proper function criterion of the devices. The results showed that AD10465 and AD9857 ran properly after 1.59 kGy(Si) irradiation, but errors were found when MEF64M16 and XQR17V16's total ionizing dose is 0.13 kGy(Si) and 0.99 kGy(Si), respectively. (authors)

Fundamental properties of high-quality carbon nanofoam: from low to high density

Directory of Open Access Journals (Sweden)

Natalie Frese

2016-12-01

Full Text Available Highly uniform samples of carbon nanofoam from hydrothermal sucrose carbonization were studied by helium ion microscopy (HIM, X-ray photoelectron spectroscopy (XPS, and Raman spectroscopy. Foams with different densities were produced by changing the process temperature in the autoclave reactor. This work illustrates how the geometrical structure, electron core levels, and the vibrational signatures change when the density of the foams is varied. We find that the low-density foams have very uniform structure consisting of micropearls with ≈2–3 μm average diameter. Higher density foams contain larger-sized micropearls (≈6–9 μm diameter which often coalesced to form nonspherical μm-sized units. Both, low- and high-density foams are comprised of predominantly sp2-type carbon. The higher density foams, however, show an advanced graphitization degree and a stronger sp3-type electronic contribution, related to the inclusion of sp3 connections in their surface network.

Analyticity of the density of electronic wavefunctions

DEFF Research Database (Denmark)

Fournais, Søren; Hoffmann-Ostenhof, Maria; Hoffmann-Ostenhof, Thomas

2004-01-01

We prove that the electronic densities of atomic and molecular eigenfunctions are real analytic in R^3 away from the nuclei.......We prove that the electronic densities of atomic and molecular eigenfunctions are real analytic in R^3 away from the nuclei....

Electron densities in planetary nebulae

International Nuclear Information System (INIS)

Stanghellini, L.; Kaler, J.B.

1989-01-01

Electron densities for 146 planetary nebulae have been obtained for analyzing a large sample of forbidden lines by interpolating theoretical curves obtained from solutions of the five-level atoms using up-to-date collision strengths and transition probabilities. Electron temperatures were derived from forbidden N II and/or forbidden O III lines or were estimated from the He II 4686 A line strengths. The forbidden O II densities are generally lower than those from forbidden Cl III by an average factor of 0.65. For data sets in which forbidden O II and forbidden S II were observed in common, the forbidden O II values drop to 0.84 that of the forbidden S II, implying that the outermost parts of the nebulae might have elevated densities. The forbidden Cl II and forbidden Ar IV densities show the best correlation, especially where they have been obtained from common data sets. The data give results within 30 percent of one another, assuming homogeneous nebulae. 106 refs

Plasma Photonic Devices for High Energy Density Science

International Nuclear Information System (INIS)

Kodama, R.

2005-01-01

High power laser technologies are opening a variety of attractive fields of science and technology using high energy density plasmas such as plasma physics, laboratory astrophysics, material science, nuclear science including medical applications and laser fusion. The critical issues in the applications are attributed to the control of intense light and enormous density of charged particles including efficient generation of the particles such as MeV electrons and protons with a current density of TA/cm2. Now these application possibilities are limited only by the laser technology. These applications have been limited in the control of the high power laser technologies and their optics. However, if we have another device consisted of the 4th material, i.e. plasma, we will obtain a higher energy density condition and explore the application possibilities, which could be called high energy plasma device. One of the most attractive devices has been demonstrated in the fast ignition scheme of the laser fusion, which is cone-guiding of ultra-intense laser light in to high density regions1. This is one of the applications of the plasma device to control the ultra-intense laser light. The other role of the devices consisted of transient plasmas is control of enormous energy-density particles in a fashion analogous to light control with a conventional optical device. A plasma fibre (5?m/1mm), as one example of the devices, has guided and deflected the high-density MeV electrons generated by ultra-intense laser light 2. The electrons have been well collimated with either a lens-like plasma device or a fibre-like plasma, resulting in isochoric heating and creation of ultra-high pressures such as Giga bar with an order of 100J. Plasmas would be uniquely a device to easily control the higher energy density particles like a conventional optical device as well as the ultra-intense laser light, which could be called plasma photonic device. (Author)

Density and temperature of energetic electrons in the Earth's magnetotail derived from high-latitude GPS observations during the declining phase of the solar cycle

Directory of Open Access Journals (Sweden)

M. H. Denton

2011-10-01

Full Text Available Single relativistic-Maxwellian fits are made to high-latitude GPS-satellite observations of energetic electrons for the period January 2006–November 2010; a constellation of 12 GPS space vehicles provides the observations. The derived fit parameters (for energies ~0.1–1.0 MeV, in combination with field-line mapping on the nightside of the magnetosphere, provide a survey of the energetic electron density and temperature distribution in the magnetotail between McIlwain L-values of L=6 and L=22. Analysis reveals the characteristics of the density-temperature distribution of energetic electrons and its variation as a function of solar wind speed and the Kp index. The density-temperature characteristics of the magnetotail energetic electrons are very similar to those found in the outer electron radiation belt as measured at geosynchronous orbit. The energetic electron density in the magnetotail is much greater during increased geomagnetic activity and during fast solar wind. The total electron density in the magnetotail is found to be strongly correlated with solar wind speed and is at least a factor of two greater for high-speed solar wind (VSW=500–1000 km s−1 compared to low-speed solar wind (VSW=100–400 km s−1. These results have important implications for understanding (a how the solar wind may modulate entry into the magnetosphere during fast and slow solar wind, and (b if the magnetotail is a source or a sink for the outer electron radiation belt.

Electron density and plasma dynamics of a colliding plasma experiment

Energy Technology Data Exchange (ETDEWEB)

Wiechula, J., E-mail: wiechula@physik.uni-frankfurt.de; Schönlein, A.; Iberler, M.; Hock, C.; Manegold, T.; Bohlender, B.; Jacoby, J. [Plasma Physics Group, Institute of Applied Physics, Goethe University, 60438 Frankfurt am Main (Germany)

2016-07-15

We present experimental results of two head-on colliding plasma sheaths accelerated by pulsed-power-driven coaxial plasma accelerators. The measurements have been performed in a small vacuum chamber with a neutral-gas prefill of ArH{sub 2} at gas pressures between 17 Pa and 400 Pa and load voltages between 4 kV and 9 kV. As the plasma sheaths collide, the electron density is significantly increased. The electron density reaches maximum values of ≈8 ⋅ 10{sup 15} cm{sup −3} for a single accelerated plasma and a maximum value of ≈2.6 ⋅ 10{sup 16} cm{sup −3} for the plasma collision. Overall a raise of the plasma density by a factor of 1.3 to 3.8 has been achieved. A scaling behavior has been derived from the values of the electron density which shows a disproportionately high increase of the electron density of the collisional case for higher applied voltages in comparison to a single accelerated plasma. Sequences of the plasma collision have been taken, using a fast framing camera to study the plasma dynamics. These sequences indicate a maximum collision velocity of 34 km/s.

X-ray electron charge density distribution in silicon

International Nuclear Information System (INIS)

Pietsch, U.

1986-01-01

During the last two years new highly accurate X-ray structure amplitudes for silicon have been published. Also the scattering phases of some 'forbidden' reflections have been determined using the X-ray three-beam case. This allows the construction of most precise valence and difference electron density plots and the comparison with those calculated on the basis of the Aldret-Hart X-ray pendelloesung data or theoretically. The density plots are discussed in details of both, the bond and the atomic site. The contributions of various Fourier components and the influence of different temperature factors on the difference density are studied. (author)

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

KAUST Repository

Mohammed, Hanan

2018-04-18

A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

Current Controlled Magnetization Switching in Cylindrical Nanowires for High-Density 3D Memory Applications

KAUST Repository

Mohammed, Hanan; Corte-Leó n, Hector; Ivanov, Yurii P.; Lopatin, Sergei; Moreno, Julian A.; Chuvilin, Andrey; Salimath, Akshaykumar; Manchon, Aurelien; Kazakova, Olga; Kosel, Jü rgen

2018-01-01

A next-generation memory device utilizing a three-dimensional nanowire system requires the reliable control of domain wall motion. In this letter, domain walls are studied in cylindrical nanowires consisting of alternating segments of cobalt and nickel. The material interfaces acting as domain wall pinning sites, are utilized in combination with current pulses, to control the position of the domain wall, which is monitored using magnetoresistance measurements. Magnetic force microscopy results further confirm the occurrence of current assisted domain wall depinning. Data bits are therefore shifted along the nanowire by sequentially pinning and depinning a domain wall between successive interfaces, a requirement necessary for race-track type memory devices. We demonstrate that the direction, amplitude and duration of the applied current pulses determine the propagation of the domain wall across pinning sites. These results demonstrate a multi-bit cylindrical nanowire device, utilizing current assisted data manipulation. The prospect of sequential pinning and depinning in these nanowires allows the bit density to increase by several Tbs, depending on the number of segments within these nanowires.

Optical and Morphological Properties of Electron-Beam Irradiated High-Density Thin Poly Ethylene Films

International Nuclear Information System (INIS)

Abdel-Hamid, H. M.; Fawzy, Y.H.A.; El-Sayed, S.M.

2005-01-01

Effects of surface morphology alterations on the optical properties of the high-density polyethylene (HDPE) films irradiated by 1.5 MeV electron beam has been investigated. The irradiation doses were conducted at the values: 30, 135, 295 and 540 kGy, respectively. The changes induced in HDPE involved: the creation of free radicals, the formation of chemical bonds i.e., intermolecular crosslinking and irreversible cleavage of bonds in the main chain, which resulted in the fragmentation of the molecules. An Ultraviolet-Visible Spectrophotometer (UV-VIS) and Scanning Electron Microscope (SEM) were used to characterize the changes. Because the crosslinking (induced by electron irradiation) limits the movability of the HDPE molecular chains, the optical energy gap was then subjected to a change. It decreased from 4.41 to 3.22 eV with an increasing electron dose up to 540 kGy. At a higher dose of irradiation (540 kGy), degradation of HDPE rather than crosslinking was raised. The irradiated HDPE films indicated that the crosslinking and degradation are likely to have an effect on their surface morphologies. The physical properties of polymeric materials can be modified by ionizing radiation in the form of gamma rays, X-rays and energetic electrons. High-energy electron beam is an especially useful tool in this regard (Cleland et al, 2003). Polymerizing, grafting, crosslinking and chain scission reactions can be initiated by irradiation. The results of such reactions can enhance the utility and value of commercial products. HDPE (CH2-CH2) has many attractive properties, such as an excellent chemical resistance, low friction and low moisture absorption

Analysis of Total Electron Content and Electron Density Profile during Different Geomagnetic Storms

Science.gov (United States)

Chapagain, N. P.; Rana, B.; Adhikari, B.

2017-12-01

Total Electron content (TEC) and electron density are the key parameters in the mitigation of ionospheric effects on radio communication system. Detail study of the TEC and electron density variations has been carried out during geomagnetic storms, with longitude and latitude, for four different locations: (13˚N -17˚N, 88˚E -98˚E), (30˚N-50˚N, 120˚W -95˚W), (29˚S-26˚S, 167˚W-163˚W,) and (60˚S-45˚S, 120˚W-105˚W) using the Gravity Recovery and Climate Experiment (GRACE) satellite observations. In order to find the geomagnetic activity, the solar wind parameters such as north-south component of inter planetary magnetic field (Bz), plasma drift velocity (Vsw), flow pressure (nPa), AE, Dst and Kp indices were obtained from Operating Mission as Nodes on the Internet (OMNI) web system. The data for geomagnetic indices have been correlated with the TEC and electron density for four different events of geomagnetic storms on 6 April 2008, 27 March 2008, 4 September 2008, and 11 October 2008. The result illustrates that the observed TEC and electron density profile significantly vary with longitudes and latitudes. This study illustrates that the values of TEC and the vertical electron density profile are influenced by the solar wind parameters associated with solar activities. The peak values of electron density and TEC increase as the geomagnetic storms become stronger. Similarly, the electron density profile varies with altitudes, which peaks around the altitude range of about 250- 350 km, depending on the strength of geomagnetic storms. The results clearly show that the peak electron density shifted to higher altitude (from about 250 km to 350 km) as the geomagnetic disturbances becomes stronger.

Interferometer for electron density measurement in exploding wire plasma

International Nuclear Information System (INIS)

Batra, Jigyasa; Jaiswar, Ashutosh; Kaushik, T.C.

2016-12-01

Mach-Zehnder Interferometer (MZI) has been developed for measuring electron density profile in pulsed plasmas. MZI is to be used for characterizing exploding wire plasmas for correlating electron density dynamics with x-rays emission. Experiments have been carried out for probing electron density in pulsed plasmas produced in our laboratory like in spark gap and exploding wire plasmas. These are microsecond phenomenon. Changes in electron density have been registered in interferograms with the help of a streak camera for specific time window. Temporal electron density profiles have been calculated by analyzing temporal fringe shifts in interferograms. This report deals with details of MZI developed in our laboratory along with its theory. Basic introductory details have also been provided for exploding wire plasmas to be probed. Some demonstrative results of electron density measurements in pulsed plasmas of spark gap and single exploding wires have been described. (author)

Suppressed carrier density for the patterned high mobility two-dimensional electron gas at γ-Al2O3/SrTiO3 heterointerfaces

DEFF Research Database (Denmark)

Niu, Wei; Gan, Yulin; Christensen, Dennis Valbjørn

2017-01-01

The two-dimensional electron gas (2DEG) at the non-isostructural interface between spinel γ-Al2O3 and perovskite SrTiO3 is featured by a record electron mobility among complex oxide interfaces in addition to a high carrier density up to the order of 1015 cm-2. Herein, we report on the patterning...... is found to be approximately 3×1013 cm-2, much lower than that of the unpatterned sample (~1015 cm-2). Remarkably, a high electron mobility of approximately 3,600 cm2V-1s-1 was obtained at low temperatures for the patterned 2DEG at a carrier density of ~ 7×1012 cm-2, which exhibits clear Shubnikov-de Hass...... quantum oscillations. The patterned high-mobility 2DEG at the γ-Al2O3/SrTiO3 interface paves the way for the design and application of spinel/perovskite interfaces for high-mobility all-oxide electronic devic...

Simulation of trapping properties of high κ material as the charge storage layer for flash memory application

International Nuclear Information System (INIS)

Yeo, Yee Ngee; Wang Yingqian; Samanta, Santanu Kumar; Yoo, Won Jong; Samudra, Ganesh; Gao, Dongyue; Chong, Chee Ching

2006-01-01

We investigated the trapping properties of high κ material as the charge storage layer in non-volatile flash memory devices using a two-dimensional device simulator, Medici. The high κ material is sandwiched between two silicon oxide layers, resulting in the Silicon-Oxide-High κ-Oxide-Silicon (SOHOS) structure. The trap energy levels of the bulk electron traps in high κ material were determined. The programming and erasing voltage and time using Fowler Nordheim tunneling were estimated by simulation. The effect of deep level traps on erasing was investigated. Also, the effect of bulk traps density, thickness of block oxide and thickness of high κ material on the threshold voltage of the device was simulated

Accuracy of ab initio electron correlation and electron densities in vanadium dioxide

Science.gov (United States)

Kylänpää, Ilkka; Balachandran, Janakiraman; Ganesh, Panchapakesan; Heinonen, Olle; Kent, Paul R. C.; Krogel, Jaron T.

2017-11-01

Diffusion quantum Monte Carlo results are used as a reference to analyze properties related to phase stability and magnetism in vanadium dioxide computed with various formulations of density functional theory. We introduce metrics related to energetics, electron densities and spin densities that give us insight on both local and global variations in the antiferromagnetic M1 and R phases. Importantly, these metrics can address contributions arising from the challenging description of the 3 d orbital physics in this material. We observe that the best description of energetics between the structural phases does not correspond to the best accuracy in the charge density, which is consistent with observations made recently by Medvedev et al. [Science 355, 371 (2017), 10.1126/science.aag0410] in the context of isolated atoms. However, we do find evidence that an accurate spin density connects to correct energetic ordering of different magnetic states in VO2, although local, semilocal, and meta-GGA functionals tend to erroneously favor demagnetization of the vanadium sites. The recently developed SCAN functional stands out as remaining nearly balanced in terms of magnetization across the M1-R transition and correctly predicting the ground state crystal structure. In addition to ranking current density functionals, our reference energies and densities serve as important benchmarks for future functional development. With our reference data, the accuracy of both the energy and the electron density can be monitored simultaneously, which is useful for functional development. So far, this kind of detailed high accuracy reference data for correlated materials has been absent from the literature.

The effect of pre-rolling Fe-Mn-Si-based shape memory alloys: Mechanical properties and transmission electron microcopy examination

International Nuclear Information System (INIS)

Baruj, A.; Troiani, H.E.

2008-01-01

Fe-Mn-Si-based alloys have been promising systems for shape memory applications for a long time. However, the need of a complicated training process in order to get the desired properties avoided their practical use. Recently, several new Fe-Mn-Si-based alloys, with interesting properties, containing different types of precipitates have been developed. In these new systems, the shape memory improvement is obtained either by the sole introduction of precipitates, or by the combination of a simple thermomechanical treatment followed by a subsequent precipitation. In this work, we investigate the effect of a thermomechanical treatment performed at a temperature of 870 K on the shape memory properties of an Fe-28Mn-6Si-5Cr (wt.%). We have found that a simple treatment, without the necessity of introducing precipitates, is enough to obtain good shape memory properties. Transmission electron microscopy shows that a large density of stacking faults is produced during the treatment. From these observations we deduce that this large stacking fault density is clearly related to the observed properties

Glucose administration attenuates spatial memory deficits induced by chronic low-power-density microwave exposure.

Science.gov (United States)

Lu, Yonghui; Xu, Shangcheng; He, Mindi; Chen, Chunhai; Zhang, Lei; Liu, Chuan; Chu, Fang; Yu, Zhengping; Zhou, Zhou; Zhong, Min

2012-07-16

Extensive evidence indicates that glucose administration attenuates memory deficits in rodents and humans, and cognitive impairment has been associated with reduced glucose metabolism and uptake in certain brain regions including the hippocampus. In the present study, we investigated whether glucose treatment attenuated memory deficits caused by chronic low-power-density microwave (MW) exposure, and the effect of MW exposure on hippocampal glucose uptake. We exposed Wistar rats to 2.45 GHz pulsed MW irradiation at a power density of 1 mW/cm(2) for 3 h/day, for up to 30 days. MW exposure induced spatial learning and memory impairments in rats. Hippocampal glucose uptake was also reduced by MW exposure in the absence or presence of insulin, but the levels of blood glucose and insulin were not affected. However, these spatial memory deficits were reversed by systemic glucose treatment. Our results indicate that glucose administration attenuates the spatial memory deficits induced by chronic low-power-density MW exposure, and reduced hippocampal glucose uptake may be associated with cognitive impairment caused by MW exposure. Copyright © 2012 Elsevier Inc. All rights reserved.

High energy density capacitors fabricated by thin film technology

International Nuclear Information System (INIS)

Barbee, T W; Johnson, G W; Wagner, A V.

1999-01-01

Low energy density in conventional capacitors severely limits efforts to miniaturize power electronics and imposes design limitations on electronics in general. We have successfully applied physical vapor deposition technology to greatly increase capacitor energy density. The high dielectric breakdown strength we have achieved in alumina thin films allows high energy density to be achieved with this moderately low dielectric constant material. The small temperature dependence of the dielectric constant, and the high reliability, high resistivity, and low dielectric loss of Al 2 O 3 , make it even more appealing. We have constructed single dielectric layer thin film capacitors and shown that they can be stacked to form multilayered structures with no loss in yield for a given capacitance. Control of film growth morphology is critical for achieving the smooth, high quality interfaces between metal and dielectric necessary for device operation at high electric fields. Most importantly, high rate deposition with extremely low particle generation is essential for achieving high energy storage at a reasonable cost. This has been achieved by reactive magnetron sputtering in which the reaction to form the dielectric oxide has been confined to the deposition surface. By this technique we have achieved a yield of over 50% for 1 cm 2 devices with an energy density of 14 J per cubic centimeter of Al 2 O 3 dielectric material in 1.2 kV, 4 nF devices. By further reducing defect density and increasing the dielectric constant of the material, we will be able to increase capacitance and construct high energy density devices to meet the requirements of applications in power electronics

Interaction effects in liquids with low electron densities

International Nuclear Information System (INIS)

Warren, W.W. Jr.

1987-01-01

The author discusses two complementary classes of systems in which strong electron-electron or electron-ion interactions appear at low electron densities. The first are the expanded liquid alkali metals (cesium) in which electron correlation effects have a profound effect on the magnetic properties on the metallic side of the metal-nonmetal transition. The second group are molten alkali halides containing low densities of localized electrons introduced, say, by dissolution of small amounts of excess metal. (Auth.)

Deriving the coronal hole electron temperature: electron density dependent ionization / recombination considerations

International Nuclear Information System (INIS)

Doyle, John Gerard; Perez-Suarez, David; Singh, Avninda; Chapman, Steven; Bryans, Paul; Summers, Hugh; Savin, Daniel Wolf

2010-01-01

Comparison of appropriate theoretically derived line ratios with observational data can yield estimates of a plasma's physical parameters, such as electron density or temperature. The usual practice in the calculation of the line ratio is the assumption of excitation by electrons/protons followed by radiative decay. Furthermore, it is normal to use the so-called coronal approximation, i.e. one only considers ionization and recombination to and from the ground-state. A more accurate treatment is to include ionization/recombination to and from metastable levels. Here, we apply this to two lines from adjacent ionization stages, Mg IX 368 A and Mg X 625 A, which has been shown to be a very useful temperature diagnostic. At densities typical of coronal hole conditions, the difference between the electron temperature derived assuming the zero density limit compared with the electron density dependent ionization/recombination is small. This, however, is not the case for flares where the electron density is orders of magnitude larger. The derived temperature for the coronal hole at solar maximum is around 1.04 MK compared to just below 0.82 MK at solar minimum.

High-spatial-resolution electron density measurement by Langmuir probe for multi-point observations using tiny spacecraft

Science.gov (United States)

Hoang, H.; Røed, K.; Bekkeng, T. A.; Trondsen, E.; Clausen, L. B. N.; Miloch, W. J.; Moen, J. I.

2017-11-01

A method for evaluating electron density using a single fixed-bias Langmuir probe is presented. The technique allows for high-spatio-temporal resolution electron density measurements, which can be effectively carried out by tiny spacecraft for multi-point observations in the ionosphere. The results are compared with the multi-needle Langmuir probe system, which is a scientific instrument developed at the University of Oslo comprising four fixed-bias cylindrical probes that allow small-scale plasma density structures to be characterized in the ionosphere. The technique proposed in this paper can comply with the requirements of future small-sized spacecraft, where the cost-effectiveness, limited space available on the craft, low power consumption and capacity for data-links need to be addressed. The first experimental results in both the plasma laboratory and space confirm the efficiency of the new approach. Moreover, detailed analyses on two challenging issues when deploying the DC Langmuir probe on a tiny spacecraft, which are the limited conductive area of the spacecraft and probe surface contamination, are presented in the paper. It is demonstrated that the limited conductive area, depending on applications, can either be of no concern for the experiment or can be resolved by mitigation methods. Surface contamination has a small impact on the performance of the developed probe.

Reconstruction of the ionospheric electron density by geostatistical inversion

Science.gov (United States)

Minkwitz, David; van den Boogaart, Karl Gerald; Hoque, Mainul; Gerzen, Tatjana

2015-04-01

The ionosphere is the upper part of the atmosphere where sufficient free electrons exist to affect the propagation of radio waves. Typically, the ionosphere extends from about 50 - 1000 km and its morphology is mainly driven by solar radiation, particle precipitation and charge exchange. Due to the strong ionospheric impact on many applications dealing with trans-ionospheric signals such as Global Navigation Satellite Systems (GNSS) positioning, navigation and remote sensing, the demand for a highly accurate reconstruction of the electron density is ever increasing. Within the Helmholtz Alliance project "Remote Sensing and Earth System Dynamics" (EDA) the utilization of the upcoming radar mission TanDEM-L and its related products are prepared. The TanDEM-L mission will operate in L-band with a wavelength of approximately 24 cm and aims at an improved understanding of environmental processes and ecosystem change, e.g. earthquakes, volcanos, glaciers, soil moisture and carbon cycle. Since its lower frequency compared to the X-band (3 cm) and C-band (5 cm) radar missions, the influence of the ionosphere will increase and might lead to a significant degradation of the radar image quality if no correction is applied. Consequently, our interest is the reconstruction of the ionospheric electron density in order to mitigate the ionospheric delay. Following the ionosphere's behaviour we establish a non-stationary and anisotropic spatial covariance model of the electron density separated into a vertical and horizontal component. In order to estimate the model's parameters we chose a maximum likelihood approach. This approach incorporates GNSS total electron content measurements, representing integral measurements of the electron density between satellite to receiver ray paths, and the NeQuick model as a non-stationary trend. Based on a multivariate normal distribution the spatial covariance model parameters are optimized and afterwards the 3D electron density can be

High density data storage principle, technology, and materials

CERN Document Server

Zhu, Daoben

2009-01-01

The explosive increase in information and the miniaturization of electronic devices demand new recording technologies and materials that combine high density, fast response, long retention time and rewriting capability. As predicted, the current silicon-based computer circuits are reaching their physical limits. Further miniaturization of the electronic components and increase in data storage density are vital for the next generation of IT equipment such as ultra high-speed mobile computing, communication devices and sophisticated sensors. This original book presents a comprehensive introduction to the significant research achievements on high-density data storage from the aspects of recording mechanisms, materials and fabrication technologies, which are promising for overcoming the physical limits of current data storage systems. The book serves as an useful guide for the development of optimized materials, technologies and device structures for future information storage, and will lead readers to the fascin...

Exchange-correlation energies of atoms from efficient density functionals: influence of the electron density

Science.gov (United States)

Tao, Jianmin; Ye, Lin-Hui; Duan, Yuhua

2017-12-01

The primary goal of Kohn-Sham density functional theory is to evaluate the exchange-correlation contribution to electronic properties. However, the accuracy of a density functional can be affected by the electron density. Here we apply the nonempirical Tao-Mo (TM) semilocal functional to study the influence of the electron density on the exchange and correlation energies of atoms and ions, and compare the results with the commonly used nonempirical semilocal functionals local spin-density approximation (LSDA), Perdew-Burke-Ernzerhof (PBE), Tao-Perdew-Staroverov-Scuseria (TPSS), and hybrid functional PBE0. We find that the spin-restricted Hartree-Fock density yields the exchange and correlation energies in good agreement with the Optimized Effective Potential method, particularly for spherical atoms and ions. However, the errors of these semilocal and hybrid functionals become larger for self-consistent densities. We further find that the quality of the electron density have greater effect on the exchange-correlation energies of kinetic energy density-dependent meta-GGA functionals TPSS and TM than on those of the LSDA and GGA, and therefore, should have greater influence on the performance of meta-GGA functionals. Finally, we show that the influence of the density quality on PBE0 is slightly reduced, compared to that of PBE, due to the exact mixing.

Dynamics of the spatial electron density distribution of EUV-induced plasmas

Science.gov (United States)

van der Horst, R. M.; Beckers, J.; Osorio, E. A.; Banine, V. Y.

2015-11-01

We studied the temporal evolution of the electron density distribution in a low pressure pulsed plasma induced by high energy extreme ultraviolet (EUV) photons using microwave cavity resonance spectroscopy (MCRS). In principle, MCRS only provides space averaged information about the electron density. However, we demonstrate here the possibility to obtain spatial information by combining multiple resonant modes. It is shown that EUV-induced plasmas, albeit being a rather exotic plasma, can be explained by known plasma physical laws and processes. Two stages of plasma behaviour are observed: first the electron density distribution contracts, after which it expands. It is shown that the contraction is due to cooling of the electrons. The moment when the density distribution starts to expand is related to the inertia of the ions. After tens of microseconds, the electrons reached the wall of the cavity. The speed of this expansion is dependent on the gas pressure and can be divided into two regimes. It is shown that the acoustic dominated regime the expansion speed is independent of the gas pressure and that in the diffusion dominated regime the expansion depends reciprocal on the gas pressure.

Dynamics of the spatial electron density distribution of EUV-induced plasmas

International Nuclear Information System (INIS)

Van der Horst, R M; Beckers, J; Banine, V Y; Osorio, E A

2015-01-01

We studied the temporal evolution of the electron density distribution in a low pressure pulsed plasma induced by high energy extreme ultraviolet (EUV) photons using microwave cavity resonance spectroscopy (MCRS). In principle, MCRS only provides space averaged information about the electron density. However, we demonstrate here the possibility to obtain spatial information by combining multiple resonant modes. It is shown that EUV-induced plasmas, albeit being a rather exotic plasma, can be explained by known plasma physical laws and processes. Two stages of plasma behaviour are observed: first the electron density distribution contracts, after which it expands. It is shown that the contraction is due to cooling of the electrons. The moment when the density distribution starts to expand is related to the inertia of the ions. After tens of microseconds, the electrons reached the wall of the cavity. The speed of this expansion is dependent on the gas pressure and can be divided into two regimes. It is shown that the acoustic dominated regime the expansion speed is independent of the gas pressure and that in the diffusion dominated regime the expansion depends reciprocal on the gas pressure. (fast track communication)

Electron density profile in multilayer systems

International Nuclear Information System (INIS)

Toekesi, K.

2004-01-01

Complete text of publication follows. Electron energy loss spectroscopy (EELS) has been used extensively to study the multilayer systems, where the thickness of layers are in the nanometer range. These studies has received considerable attention because of its technological interest, for example in the nanotechnology. On the most fundamental level, its importance is derived from the basic physics that is involved. One key quantities of interest is the response of a many-body system to an external perturbation: How act and how modify the interface between the solid-solid or solid-vacuum the excitations in the solid and in the vicinity of the interfaces. In this work, as a starting point of such investigations we calculated the electron density profile for multilayer systems. Our approach employs the time-dependent density functional theory (TDDFT), that is, the solution of a time-dependent Schroedinger equation in which the potential and forces are determined selfconsistently from the dynamics governed by the Schroedinger equation. We treat the problem in TDDFT at the level of the local-density approximation (LDA). Later, the comparison of experimentally obtained loss functions and the theory, based on our TDDFT calculations can provide deeper understanding of surface physics. We performed the calculations for half-infinite samples characterized by r s =1.642 and r s =1.997. We also performed the calculations for double layer systems. The substrate was characterized by r s =1.997 and the coverage by r s =1.642. Fig. 1. shows the obtained electron density profile in LDA approximation. Because of the sharp cutoff of electronic wave vectors at the Fermi surface, the densities in the interior exhibit slowly decaying Friedel oscillations. To highlight the Friedel oscillation we enlarged the electron density profile in Fig. 1a. and Fig. 1b. The work was supported by the Hungarian Scientific Research Found: OTKA No. T038016, the grant 'Bolyai' from the Hungarian Academy of

Determination of electron temperature and electron density in ...

African Journals Online (AJOL)

It is seen that the electron temperature increases from 5.8 × 102 oK to 7.83 × 104 oK as the pd is reduced from 130mm Hg × mm to 60 mm Hg × mm for argon. The electron densities increases from 2.8 × 1011/cm3 to 3.2 × 1011 /cm3 for the same variation of pds. For air the electron temperature increases from 3.6 × 104 oK to ...

Wigner-like crystallization of Anderson-localized electron systems with low electron densities

International Nuclear Information System (INIS)

Slutskin, A.A.; Kovtun, H.A.; Pepper, M.

2002-01-01

We consider an electron system under conditions of strong Anderson localization, taking into account interelectron long-range Coulomb repulsion. We establish that at sufficiently low electron densities and sufficiently low temperatures the Coulomb electron interaction brings about ordering of the Anderson-localized electrons into a structure that is close to an ideal (Wigner) crystal lattice, provided the dimension of the system is > 1. This Anderson-Wigner glass (AWG) is a new macroscopic electron state that, on the one hand, is beyond the conventional Fermi glass concept, and on the other hand, qualitatively differs from the known 'plain' Wigner glass (inherent in self-localized electron systems) in that the random slight electron displacements from the ideal crystal sites essentially depend on the electron density. With increasing electron density the AWG is found to turn into the plain Wigner glass or Fermi glass, depending on the width of the random spread of the electron levels. It is shown that the residual disorder of the AWG is characterized by a multi-valley ground-state degeneracy akin to that in a spin glass. Some general features of the AWG are discussed, and a new conduction mechanism of a creep type is predicted

High estradiol levels improve false memory rates and meta-memory in highly schizotypal women.

Science.gov (United States)

Hodgetts, Sophie; Hausmann, Markus; Weis, Susanne

2015-10-30

Overconfidence in false memories is often found in patients with schizophrenia and healthy participants with high levels of schizotypy, indicating an impairment of meta-cognition within the memory domain. In general, cognitive control is suggested to be modulated by natural fluctuations in oestrogen. However, whether oestrogen exerts beneficial effects on meta-memory has not yet been investigated. The present study sought to provide evidence that high levels of schizotypy are associated with increased false memory rates and overconfidence in false memories, and that these processes may be modulated by natural differences in estradiol levels. Using the Deese-Roediger-McDermott paradigm, it was found that highly schizotypal participants with high estradiol produced significantly fewer false memories than those with low estradiol. No such difference was found within the low schizotypy participants. Highly schizotypal participants with high estradiol were also less confident in their false memories than those with low estradiol; low schizotypy participants with high estradiol were more confident. However, these differences only approached significance. These findings suggest that the beneficial effect of estradiol on memory and meta-memory observed in healthy participants is specific to highly schizotypal individuals and might be related to individual differences in baseline dopaminergic activity. Copyright © 2015 Elsevier Ireland Ltd. All rights reserved.

Electron and current density measurements on tokamak plasmas

International Nuclear Information System (INIS)

Lammeren, A.C.A.P. van.

1991-01-01

The first part of this thesis describes the Thomson-scattering diagnostic as it was present at the TORTUR tokamak. For the first time with this diagnostic a complete tangential scattering spectrum was recorded during one single laser pulse. From this scattering spectrum the local current density was derived. Small deviations from the expected gaussian scattering spectrum were observed indicating the non-Maxwellian character of the electron-velocity distribution. The second part of this thesis describes the multi-channel interferometer/ polarimeter diagnostic which was constructed, build and operated on the Rijnhuizen Tokamak Project (RTP) tokamak. The diagnostic was operated routinely, yielding the development of the density profiles for every discharge. When ECRH (Electron Cyclotron Resonance Heating) is switched on the density profile broadens, the central density decreases and the total density increases, the opposite takes place when ECRH is switched off. The influence of MHD (magnetohydrodynamics) activity on the density was clearly observable. In the central region of the plasma it was measured that in hydrogen discharges the so-called sawtooth collapse is preceded by an m=1 instability which grows rapidly. An increase in radius of this m=1 mode of 1.5 cm just before the crash is observed. In hydrogen discharges the sawtooth induced density pulse shows an asymmetry for the high- and low-field side propagation. This asymmetry disappeared for helium discharges. From the location of the maximum density variations during an m=2 mode the position of the q=2 surface is derived. The density profiles are measured during the energy quench phase of a plasma disruption. A fast flattening and broadening of the density profile is observed. (author). 95 refs.; 66 figs.; 7 tabs

Assessing the Driver's Current Level of Working Memory Load with High Density Functional Near-infrared Spectroscopy: A Realistic Driving Simulator Study.

Science.gov (United States)

Unni, Anirudh; Ihme, Klas; Jipp, Meike; Rieger, Jochem W

2017-01-01

Cognitive overload or underload results in a decrease in human performance which may result in fatal incidents while driving. We envision that driver assistive systems which adapt their functionality to the driver's cognitive state could be a promising approach to reduce road accidents due to human errors. This research attempts to predict variations of cognitive working memory load levels in a natural driving scenario with multiple parallel tasks and to reveal predictive brain areas. We used a modified version of the n-back task to induce five different working memory load levels (from 0-back up to 4-back) forcing the participants to continuously update, memorize, and recall the previous 'n' speed sequences and adjust their speed accordingly while they drove for approximately 60 min on a highway with concurrent traffic in a virtual reality driving simulator. We measured brain activation using multichannel whole head, high density functional near-infrared spectroscopy (fNIRS) and predicted working memory load level from the fNIRS data by combining multivariate lasso regression and cross-validation. This allowed us to predict variations in working memory load in a continuous time-resolved manner with mean Pearson correlations between induced and predicted working memory load over 15 participants of 0.61 [standard error (SE) 0.04] and a maximum of 0.8. Restricting the analysis to prefrontal sensors placed over the forehead reduced the mean correlation to 0.38 (SE 0.04), indicating additional information gained through whole head coverage. Moreover, working memory load predictions derived from peripheral heart rate parameters achieved much lower correlations (mean 0.21, SE 0.1). Importantly, whole head fNIRS sampling revealed increasing brain activation in bilateral inferior frontal and bilateral temporo-occipital brain areas with increasing working memory load levels suggesting that these areas are specifically involved in workload-related processing.

Measurements of the Electron Cloud Density in the PEP-II Low Energy Ring

Energy Technology Data Exchange (ETDEWEB)

Byrd, John; De Santis, Stefano; Sonnad, Kiran; Caspers, Fritz; Kroyer, Tom; Krasnykh, Anatoly; Pivi, Mauro

2008-06-01

Clouds of low energy electronsin the vacuum beam pipes of accelerators of positively charged particle beams present a serious limitation for operation of these machines at high currents. Because of the size of these accelerators, it is difficult to probe the low energyelectron clouds over substantial lengths of the beam pipe. We have developed a novel technique to directly measure the electron cloud density via the phase shift induced in a TE wave that is independently excited and transmitted over a section of the accelerator. We infer the absolute phase shift with relatively high accuracy from the phase modulation of the transmission due to the modulation of the electron cloud density from a gap in the positively charged beam. We have used this technique for the first time to measure the average electron cloud density over a 50 m straight section in the positron ring of the PEP-II collider at the Stanford Linear Accelerator Center. We have also measured the variation of the density by using low field solenoid magnets to control the electrons.

Comparative study of the electron density profiles in the compact torus plasma merging experiments

International Nuclear Information System (INIS)

Hayashiya, Hitoshi; Asaka, Takeo; Katsurai, Makoto

2003-01-01

Following two previous papers on the comparative studies of the electron density distributions for a single compact torus (CT) and a spherical tokamak (ST), and for the a single ST and a merged ST, a comparative study on the dynamics of the electron density profile and after the CT and ST plasma merging process was performed. The sharpness of the peak in the electron density profile around the mid-plane just after the merging of CT with a low safety factor (q value) such as RFP or spheromak is found to be related to the speed of the magnetic axis during the plasma merging process. It is also found that the electron density gradient near the plasma edge in a high q ST is larger than that of a low q CT. High q ST is found to be provided with the magnetic structure which is able to sustain a large thermal pressure by a strong j x B force. Despite these differences in the electron density profile between CT and ST during merging, the confinement characteristics evaluated from the number of electrons confined within the magnetic separatrix after the completion of the merging is almost similar between in the merging CT and in the merging ST. For all configurations, the electron density profiles after the completion of the merging are analogous to those of the corresponding single configuration produced without the merging process. (author)

Simulation of electron beam from two strip electron guns and control of power density by rotation of gun

International Nuclear Information System (INIS)

Sahu, G K; Baruah, S; Thakur, K B

2012-01-01

Electron beam is preferably used for large scale evaporation of refractory materials. Material evaporation from a long and narrow source providing a well collimated wedge shaped atomic beam has applications in isotopic purification of metals relevant to nuclear industry. The electron beam from an electron gun with strip type filament provides a linear heating source. However, the high power density of the electron beam can lead to turbulence of the melt pool and undesirable splashing of molten metal. For obtaining quiet surface evaporation, the linear electron beam is generally scanned along its length. To further reduce the power density to maintain quiet evaporation the width of the vapour source can be controlled by rotating the electron gun on its plane, thereby scanning an inclined beam over the molten pool. The rotation of gun has further advantages. When multiple strip type electron guns are used for scaling up evaporation length, a dark zone appears between two beams due to physical separation of adjacent guns. This dark zone can be reduced by rotating the gun and thereby bringing two adjacent beams closer. The paper presented here provides the simulation results of the electron beam trajectory and incident power density originating from two strip electron guns by using in-house developed code. The effect of electron gun rotation on the electron beam trajectory and power density is studied. The simulation result is experimentally verified with the image of molten pool and heat affected zone taken after experiment. This technique can be gainfully utilized in controlling the time averaged power density of the electron beam and obtaining quiet evaporation from the metal molten pool.

Aging memory for pictures: using high-density event-related potentials to understand the effect of aging on the picture superiority effect.

Science.gov (United States)

Ally, Brandon A; Waring, Jill D; Beth, Ellen H; McKeever, Joshua D; Milberg, William P; Budson, Andrew E

2008-01-31

High-density event-related potentials (ERPs) were used to understand the effect of aging on the neural correlates of the picture superiority effect. Pictures and words were systematically varied at study and test while ERPs were recorded at retrieval. Here, the results of the word-word and picture-picture study-test conditions are presented. Behavioral results showed that older adults demonstrated the picture superiority effect to a greater extent than younger adults. The ERP data helped to explain these findings. The early frontal effect, parietal effect, and late frontal effect were all indistinguishable between older and younger adults for pictures. In contrast, for words, the early frontal and parietal effects were significantly diminished for the older adults compared to the younger adults. These two old/new effects have been linked to familiarity and recollection, respectively, and the authors speculate that these processes are impaired for word-based memory in the course of healthy aging. The findings of this study suggest that pictures allow older adults to compensate for their impaired memorial processes, and may allow these memorial components to function more effectively in older adults.

Ligand Electron Density Shape Recognition Using 3D Zernike Descriptors

Science.gov (United States)

Gunasekaran, Prasad; Grandison, Scott; Cowtan, Kevin; Mak, Lora; Lawson, David M.; Morris, Richard J.

We present a novel approach to crystallographic ligand density interpretation based on Zernike shape descriptors. Electron density for a bound ligand is expanded in an orthogonal polynomial series (3D Zernike polynomials) and the coefficients from this expansion are employed to construct rotation-invariant descriptors. These descriptors can be compared highly efficiently against large databases of descriptors computed from other molecules. In this manuscript we describe this process and show initial results from an electron density interpretation study on a dataset containing over a hundred OMIT maps. We could identify the correct ligand as the first hit in about 30 % of the cases, within the top five in a further 30 % of the cases, and giving rise to an 80 % probability of getting the correct ligand within the top ten matches. In all but a few examples, the top hit was highly similar to the correct ligand in both shape and chemistry. Further extensions and intrinsic limitations of the method are discussed.

Potential and electron density calculated for freely expanding plasma by an electron beam

International Nuclear Information System (INIS)

Ho, C. Y.; Tsai, Y. H.; Ma, C.; Wen, M. Y.

2011-01-01

This paper investigates the radial distributions of potential and electron density in free expansion plasma induced by an electron beam irradiating on the plate. The region of plasma production is assumed to be cylindrical, and the plasma expansion is assumed to be from a cylindrical source. Therefore, the one-dimensional model in cylindrical coordinates is employed in order to analyze the radial distributions of the potential and electron density. The Runge-Kutta method and the perturbation method are utilized in order to obtain the numerical and approximate solutions, respectively. The results reveal that the decrease in the initial ion energy makes most of the ions gather near the plasma production region and reduces the distribution of the average positive potential, electron, and ion density along the radial direction. The oscillation of steady-state plasma along the radial direction is also presented in this paper. The ions induce a larger amplitude of oscillation along the radial direction than do electrons because the electrons oscillate around slowly moving ions due to a far smaller electron mass than ion mass. The radial distributions of the positive potential and electron density predicted from this study are compared with the available experimental data.

Electron momentum density and Compton profile by a semi-empirical approach

Science.gov (United States)

Aguiar, Julio C.; Mitnik, Darío; Di Rocco, Héctor O.

2015-08-01

Here we propose a semi-empirical approach to describe with good accuracy the electron momentum densities and Compton profiles for a wide range of pure crystalline metals. In the present approach, we use an experimental Compton profile to fit an analytical expression for the momentum densities of the valence electrons. This expression is similar to a Fermi-Dirac distribution function with two parameters, one of which coincides with the ground state kinetic energy of the free-electron gas and the other resembles the electron-electron interaction energy. In the proposed scheme conduction electrons are neither completely free nor completely bound to the atomic nucleus. This procedure allows us to include correlation effects. We tested the approach for all metals with Z=3-50 and showed the results for three representative elements: Li, Be and Al from high-resolution experiments.

Kinetic and electron-electron energies for convex sums of ground state densities with degeneracies and fractional electron number

Energy Technology Data Exchange (ETDEWEB)

Levy, Mel, E-mail: ayers@mcmaster.ca, E-mail: mlevy@tulane.edu [Department of Chemistry, Duke University, Durham, North Carolina 27708 (United States); Department of Physics, North Carolina A and T State University, Greensboro, North Carolina 27411 (United States); Department of Chemistry, Tulane University, New Orleans, Louisiana 70118 (United States); Anderson, James S. M.; Zadeh, Farnaz Heidar; Ayers, Paul W., E-mail: ayers@mcmaster.ca, E-mail: mlevy@tulane.edu [Department of Chemistry and Chemical Biology, McMaster University, Hamilton, Ontario (Canada)

2014-05-14

Properties of exact density functionals provide useful constraints for the development of new approximate functionals. This paper focuses on convex sums of ground-level densities. It is observed that the electronic kinetic energy of a convex sum of degenerate ground-level densities is equal to the convex sum of the kinetic energies of the individual degenerate densities. (The same type of relationship holds also for the electron-electron repulsion energy.) This extends a known property of the Levy-Valone Ensemble Constrained-Search and the Lieb Legendre-Transform refomulations of the Hohenberg-Kohn functional to the individual components of the functional. Moreover, we observe that the kinetic and electron-repulsion results also apply to densities with fractional electron number (even if there are no degeneracies), and we close with an analogous point-wise property involving the external potential. Examples where different degenerate states have different kinetic energy and electron-nuclear attraction energy are given; consequently, individual components of the ground state electronic energy can change abruptly when the molecular geometry changes. These discontinuities are predicted to be ubiquitous at conical intersections, complicating the development of universally applicable density-functional approximations.

VLSI electronics microstructure science

CERN Document Server

1982-01-01

VLSI Electronics: Microstructure Science, Volume 4 reviews trends for the future of very large scale integration (VLSI) electronics and the scientific base that supports its development.This book discusses the silicon-on-insulator for VLSI and VHSIC, X-ray lithography, and transient response of electron transport in GaAs using the Monte Carlo method. The technology and manufacturing of high-density magnetic-bubble memories, metallic superlattices, challenge of education for VLSI, and impact of VLSI on medical signal processing are also elaborated. This text likewise covers the impact of VLSI t

Experimental electron density profiles of the mid-latitude lower ionosphere and winter anomaly

International Nuclear Information System (INIS)

Rapoport, Z.Ts.; Sinel'nikov, V.M.

1996-01-01

Summarized measurements of high-latitude electron density profiles of N e lower ionosphere, obtained at M100B meteorological rockets by precision method of coherent frequencies during 1979-1990 at the Volgograd test site (φ = 48 deg 41' N; λ = 44 deg 21 E), are presented. The profiles obtained represent average values of electron density at various altitudes of lower ionosphere (h = 70-100 km) during night and day time hours in winter and non winter periods. Increased electron density values during daytime hours in winter are related to winter anomaly phenomenon. 36 refs.; 1 fig

Current density monitor for intense relativistic electron beams

International Nuclear Information System (INIS)

Fiorito, R.B.; Raleigh, M.; Seltzer, S.M.

1986-01-01

We describe a new type of electric probe which is capable of measuring the time-resolved current density profile of a stable, reproducible, high-energy (>4-MeV) high-current (>1-kA) electron beam. The sensing element of this probe is an open-ended but capped-off 50-Ω coaxial line constructed of graphite. The graphite sensor is 4.3 mm in diameter, 6 cm long, and is range thin to the primary beam electrons. The probe produces a signal proportional to the intercepted beam current. When the sensor is scanned radially through the beam during repeated pulses, a curve of signal versus depth of insertion is produced from which the radial current density profile can be determined. Measurements are presented of the profile of the electron beam from the Experimental Test Accelerator (4.5 MeV, 10 kA) at Lawrence Livermore National Laboratory. Good agreement is shown between measurements made with this probe and the beam radius as predicted by transport codes. The advantage of the electric probe lies in its ruggedness, simplicity, inherent fast rise time, and low cost. In contrast to other systems it requires no radiation shielding, water cooling, or auxiliary support equipment to operate in an intense beam environment

High density operation in pulsator

International Nuclear Information System (INIS)

Klueber, O.; Cannici, B.; Engelhardt, W.; Gernhardt, J.; Glock, E.; Karger, F.; Lisitano, G.; Mayer, H.M.; Meisel, D.; Morandi, P.

1976-03-01

This report summarizes the results of experiments at high electron densities (>10 14 cm -3 ) which have been achieved by pulsed gas inflow during the discharge. At these densities a regime is established which is characterized by βsub(p) > 1, nsub(i) approximately nsub(e), Tsub(i) approximately Tsub(e) and tausub(E) proportional to nsub(e). Thus the toroidal magnetic field contributes considerably to the plasma confinement and the ions constitute almost half of the plasma pressure. Furthermore, the confinement is appreciably improved and the plasma becomes impermeable to hot neutrals. (orig.) [de

Experimental core electron density of cubic boron nitride

DEFF Research Database (Denmark)

Wahlberg, Nanna; Bindzus, Niels; Bjerg, Lasse

as well as experimental result. The redistribution of electron density will, if not accounted for, result in increased thermal parameters. It is estimated that 1.7-2 electrons is transferred from boron to nitrogen. [1]: N. Bindzus, T. Straasø, N. Wahlberg, J. Becker, L. Bjerg, N. Lock, A.-C. Dippel, and B......Experimental core electron density of cubic boron nitride Nanna Wahlberg*, Niels Bindzus*, Lasse Bjerg*, Jacob Becker*, and Bo B. Iversen* *Aarhus University, Department of Chemistry, CMC, Langelandsgade 140, 8000 Århus, Denmark The resent progress in powder diffraction provides data of quality...... obtained. The displacement parameters reported here are significantly lower than those previously reported, stressing the importance of an adequate description of the core density. The charge transfer from boron to nitrogen clearly affects the inner electron density, which is evident from theoretical...

Critical density for Landau damping in a two-electron-component plasma

Energy Technology Data Exchange (ETDEWEB)

Rupp, Constantin F.; López, Rodrigo A.; Araneda, Jaime A. [Departamento de Física, Facultad de Ciencias Físicas y Matemáticas, Universidad de Concepción, Concepción (Chile)

2015-10-15

The asymptotic evolution of an initial perturbation in a collisionless two-electron-component plasma with different temperatures is studied numerically. The transition between linear and nonlinear damping regimes is determined by slowly varying the density of the secondary electron-component using high-resolution Vlasov-Poisson simulations. It is shown that, for fixed amplitude perturbations, this transition behaves as a critical phenomenon with time scales and field amplitudes exhibiting power-law dependencies on the threshold density, similar to the critical amplitude behavior in a single-component plasma.

Adaptation in human somatosensory cortex as a model of sensory memory construction: a study using high-density EEG.

Science.gov (United States)

Bradley, Claire; Joyce, Niamh; Garcia-Larrea, Luis

2016-01-01

Adaptation in sensory cortices has been seen as a mechanism allowing the creation of transient memory representations. Here we tested the adapting properties of early responses in human somatosensory areas SI and SII by analysing somatosensory-evoked potentials over the very first repetitions of a stimulus. SI and SII generators were identified by well-defined scalp potentials and source localisation from high-density 128-channel EEG. Earliest responses (~20 ms) from area 3b in the depth of the post-central gyrus did not show significant adaptation to stimuli repeated at 300 ms intervals. In contrast, responses around 45 ms from the crown of the gyrus (areas 1 and 2) rapidly lessened to a plateau and abated at the 20th stimulation, and activities from SII in the parietal operculum at ~100 ms displayed strong adaptation with a steady amplitude decrease from the first repetition. Although responses in both SI (1-2) and SII areas showed adapting properties and hence sensory memory capacities, evidence of sensory mismatch detection has been demonstrated only for responses reflecting SII activation. This may index the passage from an early form of sensory storage in SI to more operational memory codes in SII, allowing the prediction of forthcoming input and the triggering of a specific signal when such input differs from the previous sequence. This is consistent with a model whereby the length of temporal receptive windows increases with progression in the cortical hierarchy, in parallel with the complexity and abstraction of neural representations.

Effects of bunch density gradient in high-gain free-electron lasers

International Nuclear Information System (INIS)

Huang, Z.; Kim, K.-J.

1999-01-01

The authors investigate effects of the bunch density gradient in self-amplified spontaneous emission (SASE), including the role of coherent spontaneous emission (CSE) in the evolution of the free-electron laser (FEL) process. In the exponential gain regime, the authors solve the coupled Maxwell-Vlasov equations and extend the linear theory to a bunched beam with energy spread. A time-dependent, nonlinear simulation algorithm is used to study the CSE effect and the nonlinear evolution of the radiation pulse

On the electron density localization in elemental cubic ceramic and FCC transition metals by means of a localized electrons detector.

Science.gov (United States)

Aray, Yosslen; Paredes, Ricardo; Álvarez, Luis Javier; Martiz, Alejandro

2017-06-14

The electron density localization in insulator and semiconductor elemental cubic materials with diamond structure, carbon, silicon, germanium, and tin, and good metallic conductors with face centered cubic structure such as α-Co, Ni, Cu, Rh, Pd, Ag, Ir, Pt, and Au, was studied using a localized electrons detector defined in the local moment representation. Our results clearly show an opposite pattern of the electron density localization for the cubic ceramic and transition metal materials. It was found that, for the elemental ceramic materials, the zone of low electron localization is very small and is mainly localized on the atomic basin edges. On the contrary, for the transition metals, there are low-valued localized electrons detector isocontours defining a zone of highly delocalized electrons that extends throughout the material. We have found that the best conductors are those in which the electron density at this low-value zone is the lowest.

Tomography of the ionospheric electron density with geostatistical inversion

Directory of Open Access Journals (Sweden)

D. Minkwitz

2015-08-01

Full Text Available In relation to satellite applications like global navigation satellite systems (GNSS and remote sensing, the electron density distribution of the ionosphere has significant influence on trans-ionospheric radio signal propagation. In this paper, we develop a novel ionospheric tomography approach providing the estimation of the electron density's spatial covariance and based on a best linear unbiased estimator of the 3-D electron density. Therefore a non-stationary and anisotropic covariance model is set up and its parameters are determined within a maximum-likelihood approach incorporating GNSS total electron content measurements and the NeQuick model as background. As a first assessment this 3-D simple kriging approach is applied to a part of Europe. We illustrate the estimated covariance model revealing the different correlation lengths in latitude and longitude direction and its non-stationarity. Furthermore, we show promising improvements of the reconstructed electron densities compared to the background model through the validation of the ionosondes Rome, Italy (RO041, and Dourbes, Belgium (DB049, with electron density profiles for 1 day.

Development of high-current-density LAB6 thermionic emitters for a space-charge-limited electron gun

International Nuclear Information System (INIS)

Herniter, M.E.; Getty, W.D.

1987-01-01

An electron gun has been developed for investigation of high current density, space charge limited operation of a lenthanum hexaboride (LaB 6 ) thermionic cathode. The 2.8 cm 2 cathode disk is heated by electron bombardment from a tungsten filament. For LaB 6 cathode temperatures greater than 1600 0 C it has been found that evaporation from the LaB 6 causes an increase in the tungsten filament emission, leading to an instability in the bombardment heating system. This instability has been investigated and eliminated by using a graphite disk in place of the LaB 6 cathode or by shielding the filament from the LaB 6 cathode by placing the LaB 6 in a graphite cup and bombarding the cup. The graphite disk has been heated to 1755 0 C with 755 W of heating power, and the shielded LaB 6 cathode has been heated to 1695 0 C. This temperature range is required for emission current densities in the 30 Acm 2 range. It is believed that the evaporation of lanthanum lowers the tungsten work function. In electron-gun use, the LaB 6 cathode has been operated up to 6.7 Acm 2 at 36 kV. A 120 kV Marx generator has been built to allow operation up to 40 Acm 2

ELECTRON-CAPTURE AND β-DECAY RATES FOR sd-SHELL NUCLEI IN STELLAR ENVIRONMENTS RELEVANT TO HIGH-DENSITY O–NE–MG CORES

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Toshio [Department of Physics and Graduate School of Integrated Basic Sciences, College of Humanities and Sciences, Nihon University Sakurajosui 3-25-40, Setagaya-ku, Tokyo 156-8550 (Japan); Toki, Hiroshi [Research Center for Nuclear Physics (RCNP), Osaka University, Ibaraki, Osaka 567-0047 (Japan); Nomoto, Ken’ichi, E-mail: suzuki@phys.chs.nihon-u.ac.jp [Kavli Institute for the Physics and Mathematics of the Universe (WPI), The University of Tokyo, Kashiwa, Chiba 277-8583 (Japan)

2016-02-01

Electron-capture and β-decay rates for nuclear pairs in the sd-shell are evaluated at high densities and high temperatures relevant to the final evolution of electron-degenerate O–Ne–Mg cores of stars with initial masses of 8–10 M{sub ⊙}. Electron capture induces a rapid contraction of the electron-degenerate O–Ne–Mg core. The outcome of rapid contraction depends on the evolutionary changes in the central density and temperature, which are determined by the competing processes of contraction, cooling, and heating. The fate of the stars is determined by these competitions, whether they end up with electron-capture supernovae or Fe core-collapse supernovae. Since the competing processes are induced by electron capture and β-decay, the accurate weak rates are crucially important. The rates are obtained for pairs with A = 20, 23, 24, 25, and 27 by shell-model calculations in the sd-shell with the USDB Hamiltonian. Effects of Coulomb corrections on the rates are evaluated. The rates for pairs with A = 23 and 25 are important for nuclear Urca processes that determine the cooling rate of the O–Ne–Mg core, while those for pairs with A = 20 and 24 are important for the core contraction and heat generation rates in the core. We provide these nuclear rates at stellar environments in tables with fine enough meshes at various densities and temperatures for studies of astrophysical processes sensitive to the rates. In particular, the accurate rate tables are crucially important for the final fates of not only O–Ne–Mg cores but also a wider range of stars, such as C–O cores of lower-mass stars.

ELECTRON-CAPTURE AND β-DECAY RATES FOR sd-SHELL NUCLEI IN STELLAR ENVIRONMENTS RELEVANT TO HIGH-DENSITY O–NE–MG CORES

International Nuclear Information System (INIS)

Suzuki, Toshio; Toki, Hiroshi; Nomoto, Ken’ichi

2016-01-01

Electron-capture and β-decay rates for nuclear pairs in the sd-shell are evaluated at high densities and high temperatures relevant to the final evolution of electron-degenerate O–Ne–Mg cores of stars with initial masses of 8–10 M ⊙ . Electron capture induces a rapid contraction of the electron-degenerate O–Ne–Mg core. The outcome of rapid contraction depends on the evolutionary changes in the central density and temperature, which are determined by the competing processes of contraction, cooling, and heating. The fate of the stars is determined by these competitions, whether they end up with electron-capture supernovae or Fe core-collapse supernovae. Since the competing processes are induced by electron capture and β-decay, the accurate weak rates are crucially important. The rates are obtained for pairs with A = 20, 23, 24, 25, and 27 by shell-model calculations in the sd-shell with the USDB Hamiltonian. Effects of Coulomb corrections on the rates are evaluated. The rates for pairs with A = 23 and 25 are important for nuclear Urca processes that determine the cooling rate of the O–Ne–Mg core, while those for pairs with A = 20 and 24 are important for the core contraction and heat generation rates in the core. We provide these nuclear rates at stellar environments in tables with fine enough meshes at various densities and temperatures for studies of astrophysical processes sensitive to the rates. In particular, the accurate rate tables are crucially important for the final fates of not only O–Ne–Mg cores but also a wider range of stars, such as C–O cores of lower-mass stars

Molecular Electronic Shift Registers

Science.gov (United States)

Beratan, David N.; Onuchic, Jose N.

1990-01-01

Molecular-scale shift registers eventually constructed as parts of high-density integrated memory circuits. In principle, variety of organic molecules makes possible large number of different configurations and modes of operation for such shift-register devices. Several classes of devices and implementations in some specific types of molecules proposed. All based on transfer of electrons or holes along chains of repeating molecular units.

Preparation and characterization of high-Tc superconducting thin films with high critical current densities

International Nuclear Information System (INIS)

Vase, P.

1991-08-01

The project was carried out in relation to possible cable and electronics applications of high-T c materials. Laser ablation was used as the deposition technique because of its stoichiometry conservation. Films were made in the YBa 2 Cu 3 O 7 compound due to its relatively simple stoichiometry compared to other High-T c compounds. Much attention was paid to the critical current density. A very high critical current density was reached. By using texture analysis by X-ray diffraction, it was found that films with high critical current densities were epitaxial, while films with low critical current densities contained several crystalline orientations. Four techniques for patterning the films were used - photo lithography and wet etch, laser ablation lithography, laser writing and electron beam lithography and ion milling. Sub-micron patterning has been demonstrated without degradation of the superconducting properties. The achieved patterning resolution is sufficient for preparation of many superconducting components. (AB)

Assessing the effect of electron density in photon dose calculations

International Nuclear Information System (INIS)

Seco, J.; Evans, P. M.

2006-01-01

to be a consequence of the differences in the hydrogen content between the various media studied and water. On the other hand, the electron-density scaling method was shown to predict primary photon fluence in media other than water to within 1%-2% for all the materials studied and for energies up to 5 MeV. For energies above 5 MeV, the accuracy of the electron-density scaling method was shown to depend on the photon energy, where for materials with a high content of calcium (such as bone, cortical bone) or for primary photon energies above 10 MeV, the pair-production process could no longer be neglected. The electron-density scaling method was extended to account for pair-production attenuation of the primary photons. Therefore the scaling of the dose distributions in media other than water became dependent on the photon energy. The extended electron-scaling method was shown to estimate the photon range to within 1% for all materials studied and for energies from 100 keV to 20 MeV, allowing it to be used to scale dose distributions to media other than water and generated by clinical radiotherapy photon beams with accelerator energies from 4 to 20 MV

Influence of high energy electrons on ECRH in LHD

Directory of Open Access Journals (Sweden)

Ogasawara S.

2012-09-01

Full Text Available The central bulk electron temperature of more than 20 keV is achieved in LHD as a result of increasing the injection power and the lowering the electron density near 2 × 1018 m−3. Such collision-less regime is important from the aspect of the neoclassical transport and also the potential structure formation. The presences of appreciable amount of high energy electrons are indicated from hard X-ray PHA, and the discrepancy between the stored energy and kinetic energy estimated from Thomson scattering. ECE spectrum are also sensitive to the presence of high energy electrons and discussed by solving the radiation transfer equation. The ECRH power absorption to the bulk and the high energy electrons are dramatically affected by the acceleration and the confinement of high energy electrons. The heating mechanisms and the acceleration process of high energy electrons are discussed by comparing the experimental results and the ray tracing calculation under assumed various density and mean energy of high energy electrons.

Influence of carrier density on the electronic cooling channels of bilayer graphene

Science.gov (United States)

Limmer, T.; Houtepen, A. J.; Niggebaum, A.; Tautz, R.; Da Como, E.

2011-09-01

We study the electronic cooling dynamics in a single flake of bilayer graphene by femtosecond transient absorption probing the photon-energy range 0.25-1.3 eV. From the transients, we extract the carrier cooling curves for different initial temperatures and densities of the photoexcited electrons and holes. Two regimes of carrier cooling, dominated by optical and acoustic phonons emission, are clearly identified. For increasing carrier density, the crossover between the two regimes occurs at larger carrier temperatures, since cooling via optical phonons experiences a bottleneck. Acoustic phonons, which are less sensitive to saturation, show an increasing contribution at high density.

Assessing the Driver’s Current Level of Working Memory Load with High Density Functional Near-infrared Spectroscopy: A Realistic Driving Simulator Study

Science.gov (United States)

Unni, Anirudh; Ihme, Klas; Jipp, Meike; Rieger, Jochem W.

2017-01-01

Cognitive overload or underload results in a decrease in human performance which may result in fatal incidents while driving. We envision that driver assistive systems which adapt their functionality to the driver’s cognitive state could be a promising approach to reduce road accidents due to human errors. This research attempts to predict variations of cognitive working memory load levels in a natural driving scenario with multiple parallel tasks and to reveal predictive brain areas. We used a modified version of the n-back task to induce five different working memory load levels (from 0-back up to 4-back) forcing the participants to continuously update, memorize, and recall the previous ‘n’ speed sequences and adjust their speed accordingly while they drove for approximately 60 min on a highway with concurrent traffic in a virtual reality driving simulator. We measured brain activation using multichannel whole head, high density functional near-infrared spectroscopy (fNIRS) and predicted working memory load level from the fNIRS data by combining multivariate lasso regression and cross-validation. This allowed us to predict variations in working memory load in a continuous time-resolved manner with mean Pearson correlations between induced and predicted working memory load over 15 participants of 0.61 [standard error (SE) 0.04] and a maximum of 0.8. Restricting the analysis to prefrontal sensors placed over the forehead reduced the mean correlation to 0.38 (SE 0.04), indicating additional information gained through whole head coverage. Moreover, working memory load predictions derived from peripheral heart rate parameters achieved much lower correlations (mean 0.21, SE 0.1). Importantly, whole head fNIRS sampling revealed increasing brain activation in bilateral inferior frontal and bilateral temporo-occipital brain areas with increasing working memory load levels suggesting that these areas are specifically involved in workload-related processing. PMID

Assessing the Driver’s Current Level of Working Memory Load with High Density Functional Near-infrared Spectroscopy: A Realistic Driving Simulator Study

Directory of Open Access Journals (Sweden)

Anirudh Unni

2017-04-01

Full Text Available Cognitive overload or underload results in a decrease in human performance which may result in fatal incidents while driving. We envision that driver assistive systems which adapt their functionality to the driver’s cognitive state could be a promising approach to reduce road accidents due to human errors. This research attempts to predict variations of cognitive working memory load levels in a natural driving scenario with multiple parallel tasks and to reveal predictive brain areas. We used a modified version of the n-back task to induce five different working memory load levels (from 0-back up to 4-back forcing the participants to continuously update, memorize, and recall the previous ‘n’ speed sequences and adjust their speed accordingly while they drove for approximately 60 min on a highway with concurrent traffic in a virtual reality driving simulator. We measured brain activation using multichannel whole head, high density functional near-infrared spectroscopy (fNIRS and predicted working memory load level from the fNIRS data by combining multivariate lasso regression and cross-validation. This allowed us to predict variations in working memory load in a continuous time-resolved manner with mean Pearson correlations between induced and predicted working memory load over 15 participants of 0.61 [standard error (SE 0.04] and a maximum of 0.8. Restricting the analysis to prefrontal sensors placed over the forehead reduced the mean correlation to 0.38 (SE 0.04, indicating additional information gained through whole head coverage. Moreover, working memory load predictions derived from peripheral heart rate parameters achieved much lower correlations (mean 0.21, SE 0.1. Importantly, whole head fNIRS sampling revealed increasing brain activation in bilateral inferior frontal and bilateral temporo-occipital brain areas with increasing working memory load levels suggesting that these areas are specifically involved in workload

Plasma Diagnostics in High Density Reactors

International Nuclear Information System (INIS)

Daltrini, A. M.; Moshkalyov, S.; Monteiro, M. J. R.; Machida, M.; Kostryukov, A.; Besseler, E.; Biasotto, C.; Diniz, J. A.

2006-01-01

Langmuir electric probes and optical emission spectroscopy diagnostics were developed for applications in high density plasmas. These diagnostics were employed in two plasma sources: an electron cyclotron resonance (ECR) plasma and an RF driven inductively coupled plasma (ICP) plasma. Langmuir probes were tested using a number of probing dimensions, probe tip materials, circuits for probe bias and filters. Then, the results were compared with the optical spectroscopy measurements. With these diagnostics, analyses of various plasma processes were performed in both reactors. For example, it has been shown that species like NH radicals generated in gas phase can have critical impact on films deposited by ECR plasmas. In the ICP source, plasmas in atomic and molecular gases were shown to have different spatial distributions, likely due to nonlocal electron heating. The low-to-high density transitions in the ICP plasma were also studied. The role of metastables is shown to be significant in Ar plasmas, in contrast to plasmas with additions of molecular gases

Electron density values of various human tissues: in vitro Compton scatter measurements and calculated ranges

International Nuclear Information System (INIS)

Shrimpton, P.C.

1981-01-01

Accurate direct measurements of electron density have been performed on specimens from 10 different tissue types of the human body, representing the major organs, using a Compton scatter technique. As a supplement to these experimental values, calculations have been carried out to determine the electron densities expected for these tissue types. The densities observed are in good agreement with the broad ranges deduced from the basic data previously published. The results of both the in vitro sample measurements and the approximate calculations indicate that the electron density of most normal healthy soft tissue can be expected to fall within the fairly restricted range of +- 5% around 3.4 X 10 23 electrons per cm 3 . The obvious exception to this generalisation is the result for lung tissue, which falls considerably below this range owing to the high air content inherent in its construction. In view of such an overall limited variation with little difference between tissues, it would appear that electron density alone is likely to be a rather poor clinical parameter for tissue analysis, with high accuracy and precision being essential in any in vivo Compton measurements for imaging or diagnosis on specific organs. (author)

Relativistic density functional theory with picture-change corrected electron density based on infinite-order Douglas-Kroll-Hess method

Science.gov (United States)

Oyama, Takuro; Ikabata, Yasuhiro; Seino, Junji; Nakai, Hiromi

2017-07-01

This Letter proposes a density functional treatment based on the two-component relativistic scheme at the infinite-order Douglas-Kroll-Hess (IODKH) level. The exchange-correlation energy and potential are calculated using the electron density based on the picture-change corrected density operator transformed by the IODKH method. Numerical assessments indicated that the picture-change uncorrected density functional terms generate significant errors, on the order of hartree for heavy atoms. The present scheme was found to reproduce the energetics in the four-component treatment with high accuracy.

Some new features of electron density irregularities over SHAR during strong spread F

Directory of Open Access Journals (Sweden)

S. Raizada

Full Text Available An RH-560 rocket flight was conducted from Sriharikota rocket range (SHAR (14°N, 80°E, dip latitude 5.5°N to study electron density and electric field irregularities during spread F. The rocket was launched at 2130 local time (LT and it attained an apogee of 348 km. Results of electron density fluctuations are presented here. Two extremely sharp layers of very high electron density were observed at 105 and 130 km. The electron density increase in these layers was by a factor of 50 in a vertical extent of 10 km. Large depletions in electron density were observed around 175 and 238 km. Both sharp layers as well as depletions were observed also during the descent. The presence of sharp layers and depletions during the ascent and the descent of the rocket as well as an order of magnitude less electron density, in 150-300 km region during the descent, indicate the presence of strong large-scale horizontal gradients in the electron density. Some of the valley region irregularities (165-178 km, in the intermediate scale size range, observed during this flight, show spectral peaks at 2 km and can be interpreted in terms of the image striation theory suggested by Vickrey et al. The irregularities at 176 km do not exhibit any peak at kilometer scales and appear to be of new type. The growth rate of intermediate scale size irregularities, produced through generalized Rayleigh Taylor instability, was calculated for the 200-330 km altitude, using observed values of electron density gradients and an assumed vertically downward wind of 20 ms^-1. These growth rate calculations suggest that the observed irregularities could be produced by the gradient drift instability.

Key words: Ionosphere (equatorial ionosphere; ionospheric irregularities - Radio science (ionospheric physics

Some new features of electron density irregularities over SHAR during strong spread F

Directory of Open Access Journals (Sweden)

S. Raizada

2000-02-01

Full Text Available An RH-560 rocket flight was conducted from Sriharikota rocket range (SHAR (14°N, 80°E, dip latitude 5.5°N to study electron density and electric field irregularities during spread F. The rocket was launched at 2130 local time (LT and it attained an apogee of 348 km. Results of electron density fluctuations are presented here. Two extremely sharp layers of very high electron density were observed at 105 and 130 km. The electron density increase in these layers was by a factor of 50 in a vertical extent of 10 km. Large depletions in electron density were observed around 175 and 238 km. Both sharp layers as well as depletions were observed also during the descent. The presence of sharp layers and depletions during the ascent and the descent of the rocket as well as an order of magnitude less electron density, in 150-300 km region during the descent, indicate the presence of strong large-scale horizontal gradients in the electron density. Some of the valley region irregularities (165-178 km, in the intermediate scale size range, observed during this flight, show spectral peaks at 2 km and can be interpreted in terms of the image striation theory suggested by Vickrey et al. The irregularities at 176 km do not exhibit any peak at kilometer scales and appear to be of new type. The growth rate of intermediate scale size irregularities, produced through generalized Rayleigh Taylor instability, was calculated for the 200-330 km altitude, using observed values of electron density gradients and an assumed vertically downward wind of 20 ms-1. These growth rate calculations suggest that the observed irregularities could be produced by the gradient drift instability.Key words: Ionosphere (equatorial ionosphere; ionospheric irregularities - Radio science (ionospheric physics

Electron number density profiles derived from radio occultation on the CASSIOPE spacecraft

DEFF Research Database (Denmark)

Shume, E. B.; Vergados, P.; Komjathy, A.

2017-01-01

This paper presents electron number density profiles derived from high resolution Global Positioning System (GPS) radio occultation (RO) observations performed using the Enhanced Polar Outflow Probe (e-POP) payload on the high inclination CAScade, Smallsat and IOnospheric Polar Explorer (CASSIOPE...... good agreement with density profiles estimated from ionosonde data, measured over nearby stations to the latitude and longitude of the RO tangent points, (2) in good agreement with density profiles inferred from GPS RO measured by the Constellation Observing System for Meteorology, Ionosphere...

Comparison of Conjugate Gradient Density Matrix Search and Chebyshev Expansion Methods for Avoiding Diagonalization in Large-Scale Electronic Structure Calculations

Science.gov (United States)

Bates, Kevin R.; Daniels, Andrew D.; Scuseria, Gustavo E.

1998-01-01

We report a comparison of two linear-scaling methods which avoid the diagonalization bottleneck of traditional electronic structure algorithms. The Chebyshev expansion method (CEM) is implemented for carbon tight-binding calculations of large systems and its memory and timing requirements compared to those of our previously implemented conjugate gradient density matrix search (CG-DMS). Benchmark calculations are carried out on icosahedral fullerenes from C60 to C8640 and the linear scaling memory and CPU requirements of the CEM demonstrated. We show that the CPU requisites of the CEM and CG-DMS are similar for calculations with comparable accuracy.

High-bandwidth memory interface

CERN Document Server

Kim, Chulwoo; Song, Junyoung

2014-01-01

This book provides an overview of recent advances in memory interface design at both the architecture and circuit levels. Coverage includes signal integrity and testing, TSV interface, high-speed serial interface including equalization, ODT, pre-emphasis, wide I/O interface including crosstalk, skew cancellation, and clock generation and distribution. Trends for further bandwidth enhancement are also covered.   • Enables readers with minimal background in memory design to understand the basics of high-bandwidth memory interface design; • Presents state-of-the-art techniques for memory interface design; • Covers memory interface design at both the circuit level and system architecture level.

Cancer therapy using non-thermal atmospheric pressure plasma with ultra-high electron density

International Nuclear Information System (INIS)

Tanaka, Hiromasa; Mizuno, Masaaki; Toyokuni, Shinya; Maruyama, Shoichi; Kodera, Yasuhiro; Terasaki, Hiroko; Adachi, Tetsuo; Kato, Masashi; Kikkawa, Fumitaka; Hori, Masaru

2015-01-01

Cancer therapy using non-thermal atmospheric pressure plasma is a big challenge in plasma medicine. Reactive species generated from plasma are key factors for treating cancer cells, and thus, non-thermal atmospheric pressure plasma with high electron density has been developed and applied for cancer treatment. Various cancer cell lines have been treated with plasma, and non-thermal atmospheric plasma clearly has anti-tumor effects. Recent innovative studies suggest that plasma can both directly and indirectly affect cells and tissues, and this observation has widened the range of applications. Thus, cancer therapy using non-thermal atmospheric pressure plasma is promising. Animal experiments and understanding the mode of action are essential for clinical application in the future. A new academic field that combines plasma science, the biology of free radicals, and systems biology will be established

Cancer therapy using non-thermal atmospheric pressure plasma with ultra-high electron density

Energy Technology Data Exchange (ETDEWEB)

Tanaka, Hiromasa [Institute of Innovation for Future Society, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan); Center for Advanced Medicine and Clinical Research, Nagoya University Graduate School of Medicine, Tsurumai-cho 65, Showa-ku, Nagoya 466-8550 (Japan); Mizuno, Masaaki [Center for Advanced Medicine and Clinical Research, Nagoya University Graduate School of Medicine, Tsurumai-cho 65, Showa-ku, Nagoya 466-8550 (Japan); Toyokuni, Shinya [Department of Pathology and Biological Responses, Nagoya University Graduate School of Medicine, Tsurumai-cho 65, Showa-ku, Nagoya 466-8550 (Japan); Maruyama, Shoichi [Department of Nephrology, Nagoya University Graduate School of Medicine, Tsurumai-cho 65, Showa-ku, Nagoya 466-8550 (Japan); Kodera, Yasuhiro [Department of Gastroenterological Surgery (Surgery II), Nagoya University Graduate School of Medicine, Tsurumai-cho 65, Showa-ku, Nagoya 466-8550 (Japan); Terasaki, Hiroko [Department of Ophthalmology, Nagoya University Graduate School of Medicine, Tsurumai-cho 65, Showa-ku, Nagoya 466-8550 (Japan); Adachi, Tetsuo [Laboratory of Clinical Pharmaceutics, Gifu Pharmaceutical University, 501-1196 Gifu (Japan); Kato, Masashi [Department of Occupational and Environmental Health, Nagoya University Graduate School of Medicine, Tsurumai-cho 65, Showa-ku, Nagoya 466-8550 (Japan); Kikkawa, Fumitaka [Department of Obstetrics and Gynecology, Nagoya University Graduate School of Medicine, Tsurumai-cho 65, Showa-ku, Nagoya 466-8550 (Japan); Hori, Masaru [Institute of Innovation for Future Society, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603 (Japan)

2015-12-15

Cancer therapy using non-thermal atmospheric pressure plasma is a big challenge in plasma medicine. Reactive species generated from plasma are key factors for treating cancer cells, and thus, non-thermal atmospheric pressure plasma with high electron density has been developed and applied for cancer treatment. Various cancer cell lines have been treated with plasma, and non-thermal atmospheric plasma clearly has anti-tumor effects. Recent innovative studies suggest that plasma can both directly and indirectly affect cells and tissues, and this observation has widened the range of applications. Thus, cancer therapy using non-thermal atmospheric pressure plasma is promising. Animal experiments and understanding the mode of action are essential for clinical application in the future. A new academic field that combines plasma science, the biology of free radicals, and systems biology will be established.

Teaching Chemistry with Electron Density Models

Science.gov (United States)

Shusterman, Gwendolyn P.; Shusterman, Alan J.

1997-07-01

Linus Pauling once said that a topic must satisfy two criteria before it can be taught to students. First, students must be able to assimilate the topic within a reasonable amount of time. Second, the topic must be relevant to the educational needs and interests of the students. Unfortunately, the standard general chemistry textbook presentation of "electronic structure theory", set as it is in the language of molecular orbitals, has a difficult time satisfying either criterion. Many of the quantum mechanical aspects of molecular orbitals are too difficult for most beginning students to appreciate, much less master, and the few applications that are presented in the typical textbook are too limited in scope to excite much student interest. This article describes a powerful new method for teaching students about electronic structure and its relevance to chemical phenomena. This method, which we have developed and used for several years in general chemistry (G.P.S.) and organic chemistry (A.J.S.) courses, relies on computer-generated three-dimensional models of electron density distributions, and largely satisfies Pauling's two criteria. Students find electron density models easy to understand and use, and because these models are easily applied to a broad range of topics, they successfully convey to students the importance of electronic structure. In addition, when students finally learn about orbital concepts they are better prepared because they already have a well-developed three-dimensional picture of electronic structure to fall back on. We note in this regard that the types of models we use have found widespread, rigorous application in chemical research (1, 2), so students who understand and use electron density models do not need to "unlearn" anything before progressing to more advanced theories.

Light programmable organic transistor memory device based on hybrid dielectric

Science.gov (United States)

Ren, Xiaochen; Chan, Paddy K. L.

2013-09-01

We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

High-density-plasma diagnostics in magnetic-confinement fusion

International Nuclear Information System (INIS)

Jahoda, F.C.

1982-01-01

The lectures will begin by defining high density in the context of magnetic confinement fusion research and listing some alternative reactor concepts, ranging from n/sub e/ approx. 2 x 10 14 cm -3 to several orders of magnitude greater, that offer potential advantages over the main-line, n/sub e/ approx. 1 x 10 14 cm -3 , Tokamak reactor designs. The high density scalings of several major diagnostic techniques, some favorable and some disadvantageous, will be discussed. Special emphasis will be given to interferometric methods, both electronic and photographic, for which integral n/sub e/dl measurements and associated techniques are accessible with low wavelength lasers. Reactor relevant experience from higher density, smaller dimension devices exists. High density implies high β, which implies economies of scale. The specialized features of high β diagnostics will be discussed

Phenomenology of high density disruptions in the TFTR tokamak

International Nuclear Information System (INIS)

Fredrickson, E.D.; McGuire, K.M.; Bell, M.G.

1993-01-01

Studies of high density disruptions on TFTR, including a comparison of minor and major disruptions at high density, provide important new information regarding the nature of the disruption mechanism. Further, for the first time, an (m,n)=(1,1) 'cold bubble' precursor to high density disruptions has been experimentally observed in the electron temperature profile. The precursor to major disruptions resembles the 'vacuum bubble' model of disruptions first proposed by B.B. Kadomtsev and O.P. Pogutse (Sov. Phys. - JETP 38 (1974) 283). (author). Letter-to-the-editor. 25 refs, 3 figs

Density-controllable nonvolatile memory devices having metal nanocrystals through chemical synthesis and assembled by spin-coating technique

International Nuclear Information System (INIS)

Wang Guangli; Chen Yubin; Shi Yi; Pu Lin; Pan Lijia; Zhang Rong; Zheng Youdou

2010-01-01

A novel two-step method is employed, for the first time, to fabricate nonvolatile memory devices that have metal nanocrystals. First, size-averaged Au nanocrystals are synthesized chemically; second, they are assembled into memory devices by a spin-coating technique at room temperature. This attractive approach makes it possible to tailor the diameter and control the density of nanocrystals individually. In addition, processes at room temperature prevent Au diffusion, which is a main concern for the application of metal nanocrystal-based memory. The experimental results, both the morphology characterization and the electrical measurements, reveal that there is an optimum density of nanocrystal monolayer to balance between long data retention and a large hysteresis memory window. At the same time, density-controllable devices could also feed the preferential emphasis on either memory window or retention time. All these facts confirm the advantages and novelty of our two-step method. (semiconductor devices)

Resistance switching memory in perovskite oxides

International Nuclear Information System (INIS)

Yan, Z.B.; Liu, J.-M.

2015-01-01

The resistance switching behavior has recently attracted great attentions for its application as resistive random access memories (RRAMs) due to a variety of advantages such as simple structure, high-density, high-speed and low-power. As a leading storage media, the transition metal perovskite oxide owns the strong correlation of electrons and the stable crystal structure, which brings out multifunctionality such as ferroelectric, multiferroic, superconductor, and colossal magnetoresistance/electroresistance effect, etc. The existence of rich electronic phases, metal–insulator transition and the nonstoichiometric oxygen in perovskite oxide provides good platforms to insight into the resistive switching mechanisms. In this review, we first introduce the general characteristics of the resistance switching effects, the operation methods and the storage media. Then, the experimental evidences of conductive filaments, the transport and switching mechanisms, and the memory performances and enhancing methods of perovskite oxide based filamentary RRAM cells have been summarized and discussed. Subsequently, the switching mechanisms and the performances of the uniform RRAM cells associating with the carrier trapping/detrapping and the ferroelectric polarization switching have been discussed. Finally, the advices and outlook for further investigating the resistance switching and enhancing the memory performances are given

Interplay of charge density wave and spin density wave in high-Tc superconductors

International Nuclear Information System (INIS)

Pradhan, B.; Raj, B.K.; Rout, G.C.

2008-01-01

We present a mean-field theory theoretical model study for the coexistence of the two strongly interacting charge density wave (CDW) and spin density wave (SDW) for high-T c cuprates in the underdoped region before the onset of the superconductivity in the system. The analytic expressions for the temperature dependence of the CDW and SDW order parameters are derived and solved self-consistently. Their interplay is studied by varying their respective coupling constants. It is observed that in the interplay region both the gap parameters exhibit very strong dependence of their gap values for the coupling constants. Further, the electronic density of states (DOS) for the conduction electrons, which represents the scanning tunneling data, show two gap parameters in the interplay region from these experimental data. Our model can help to determine separately the CDW and SDW parameters

Spatial and Working Memory Is Linked to Spine Density and Mushroom Spines.

Directory of Open Access Journals (Sweden)

Rasha Refaat Mahmmoud

Full Text Available Changes in synaptic structure and efficacy including dendritic spine number and morphology have been shown to underlie neuronal activity and size. Moreover, the shapes of individual dendritic spines were proposed to correlate with their capacity for structural change. Spine numbers and morphology were reported to parallel memory formation in the rat using a water maze but, so far, there is no information on spine counts or shape in the radial arm maze (RAM, a frequently used paradigm for the evaluation of complex memory formation in the rodent.24 male Sprague-Dawley rats were divided into three groups, 8 were trained, 8 remained untrained in the RAM and 8 rats served as cage controls. Dendritic spine numbers and individual spine forms were counted in CA1, CA3 areas and dentate gyrus of hippocampus using a DIL dye method with subsequent quantification by the Neuronstudio software and the image J program.Working memory errors (WME and latency in the RAM were decreased along the training period indicating that animals performed the task. Total spine density was significantly increased following training in the RAM as compared to untrained rats and cage controls. The number of mushroom spines was significantly increased in the trained as compared to untrained and cage controls. Negative significant correlations between spine density and WME were observed in CA1 basal dendrites and in CA3 apical and basal dendrites. In addition, there was a significant negative correlation between spine density and latency in CA3 basal dendrites.The study shows that spine numbers are significantly increased in the trained group, an observation that may suggest the use of this method representing a morphological parameter for memory formation studies in the RAM. Herein, correlations between WME and latency in the RAM and spine density revealed a link between spine numbers and performance in the RAM.

Spatial and Working Memory Is Linked to Spine Density and Mushroom Spines.

Science.gov (United States)

Mahmmoud, Rasha Refaat; Sase, Sunetra; Aher, Yogesh D; Sase, Ajinkya; Gröger, Marion; Mokhtar, Maher; Höger, Harald; Lubec, Gert

2015-01-01

Changes in synaptic structure and efficacy including dendritic spine number and morphology have been shown to underlie neuronal activity and size. Moreover, the shapes of individual dendritic spines were proposed to correlate with their capacity for structural change. Spine numbers and morphology were reported to parallel memory formation in the rat using a water maze but, so far, there is no information on spine counts or shape in the radial arm maze (RAM), a frequently used paradigm for the evaluation of complex memory formation in the rodent. 24 male Sprague-Dawley rats were divided into three groups, 8 were trained, 8 remained untrained in the RAM and 8 rats served as cage controls. Dendritic spine numbers and individual spine forms were counted in CA1, CA3 areas and dentate gyrus of hippocampus using a DIL dye method with subsequent quantification by the Neuronstudio software and the image J program. Working memory errors (WME) and latency in the RAM were decreased along the training period indicating that animals performed the task. Total spine density was significantly increased following training in the RAM as compared to untrained rats and cage controls. The number of mushroom spines was significantly increased in the trained as compared to untrained and cage controls. Negative significant correlations between spine density and WME were observed in CA1 basal dendrites and in CA3 apical and basal dendrites. In addition, there was a significant negative correlation between spine density and latency in CA3 basal dendrites. The study shows that spine numbers are significantly increased in the trained group, an observation that may suggest the use of this method representing a morphological parameter for memory formation studies in the RAM. Herein, correlations between WME and latency in the RAM and spine density revealed a link between spine numbers and performance in the RAM.

Histamine H3 receptor density is negatively correlated with neural activity related to working memory in humans.

Science.gov (United States)

Ito, Takehito; Kimura, Yasuyuki; Seki, Chie; Ichise, Masanori; Yokokawa, Keita; Kawamura, Kazunori; Takahashi, Hidehiko; Higuchi, Makoto; Zhang, Ming-Rong; Suhara, Tetsuya; Yamada, Makiko

2018-06-14

The histamine H 3 receptor is regarded as a drug target for cognitive impairments in psychiatric disorders. H 3 receptors are expressed in neocortical areas, including the prefrontal cortex, the key region of cognitive functions such as working memory. However, the role of prefrontal H 3 receptors in working memory has not yet been clarified. Therefore, using functional magnetic resonance imaging (fMRI) and positron emission tomography (PET) techniques, we aimed to investigate the association between the neural activity of working memory and the density of H 3 receptors in the prefrontal cortex. Ten healthy volunteers underwent both fMRI and PET scans. The N-back task was used to assess the neural activities related to working memory. H 3 receptor density was measured with the selective PET radioligand [ 11 C] TASP457. The neural activity of the right dorsolateral prefrontal cortex during the performance of the N-back task was negatively correlated with the density of H 3 receptors in this region. Higher neural activity of working memory was associated with lower H 3 receptor density in the right dorsolateral prefrontal cortex. This finding elucidates the role of H 3 receptors in working memory and indicates the potential of H 3 receptors as a therapeutic target for the cognitive impairments associated with neuropsychiatric disorders.

Calculation of electronic stopping power along glancing swift heavy ion tracks in perovskites using ab initio electron density data

Energy Technology Data Exchange (ETDEWEB)

Osmani, O; Duvenbeck, A; Akcoeltekin, E; Meyer, R; Schleberger, M [Department of Physics, University of Duisburg-Essen, D-47048 Duisburg (Germany); Lebius, H [CIMAP, blvd Henri Becquerel, 14070 Caen (France)], E-mail: marika.schleberger@uni-due.de

2008-08-06

In recent experiments the irradiation of insulators of perovskite type with swift (E{approx}100 MeV) heavy ions under glancing incidence has been shown to provide a unique means to generate periodically arranged nanodots at the surface. The physical origin of these patterns has been suggested as stemming from a highly anisotropic electron density distribution within the bulk. In order to show the relevance of the electron density distribution of the target we present a model calculation for the system Xe{sup 23+} {yields} SrTiO{sub 3} that is known to produce the aforementioned surface modifications. On the basis of the Lindhard model of electronic stopping, we employ highly-resolved ab initio electron density data to describe the conversion of kinetic energy into excitation energy along the ion track. The primary particle dynamics are obtained via integration of the Newtonian equations of motion that are governed by a space- and time-dependent frictional force originating from Lindhard stopping. The analysis of the local electronic stopping power along the ion track reveals a pronounced periodic structure. The periodicity length varies strongly with the particular choice of the polar angle of incidence and is directly correlated to the experimentally observed formation of periodic nanodots at insulator surfaces.

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

Energy Technology Data Exchange (ETDEWEB)

Banerjee, W.; Maikap, S. [Thin Film Nano Tech. Lab., Department of Electronic Engineering, Chang Gung University, Tao-Yuan, Taiwan 333, Taiwan (China); Tien, T.-C. [Material Research Laboratories, Industrial Technology Research Institute, Hsinchu, Taiwan 310, Taiwan (China); Li, W.-C.; Yang, J.-R. [Department of Materials Science and Engineering, National Taiwan University, Taipei 106, Taiwan (China)

2011-10-01

The impact of iridium-oxide (IrO{sub x}) nano layer thickness on the tunneling oxide and memory performance of IrO{sub x} metal nanocrystals in an n-Si/SiO{sub 2}/Al{sub 2}O{sub 3}/IrO{sub x}/Al{sub 2}O{sub 3}/IrO{sub x} structure has been investigated. A thinner (1.5 nm) IrO{sub x} nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO{sub x} nanocrystals with a small average diameter of 2.4 nm and a high density of {approx}2 x 10{sup 12}/cm{sup 2} have been observed by scanning transmission electron microscopy. The IrO{sub x} nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of {+-}5 V and 7.2 V at a sweeping gate voltage of {+-} 8 V has been observed for the 1.5 nm-thick IrO{sub x} nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO{sub x} nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10{sup 13}/cm{sup 2} and 2 x 10{sup 13}/cm{sup 2}, respectively, due to the small size and high-density of IrO{sub x} nanocrystals. Excellent program/erase endurance of >10{sup 6} cycles and good retention of 10{sup 4} s with a good memory window of >1.2 V under a small operation voltage of {+-} 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO{sub x} nanocrystals. This study is not only important for the IrO{sub x} nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Impact of metal nano layer thickness on tunneling oxide and memory performance of core-shell iridium-oxide nanocrystals

International Nuclear Information System (INIS)

Banerjee, W.; Maikap, S.; Tien, T.-C.; Li, W.-C.; Yang, J.-R.

2011-01-01

The impact of iridium-oxide (IrO x ) nano layer thickness on the tunneling oxide and memory performance of IrO x metal nanocrystals in an n-Si/SiO 2 /Al 2 O 3 /IrO x /Al 2 O 3 /IrO x structure has been investigated. A thinner (1.5 nm) IrO x nano layer has shown better memory performance than that of a thicker one (2.5 nm). Core-shell IrO x nanocrystals with a small average diameter of 2.4 nm and a high density of ∼2 x 10 12 /cm 2 have been observed by scanning transmission electron microscopy. The IrO x nanocrystals are confirmed by x-ray photoelectron spectroscopy. A large memory window of 3.0 V at a sweeping gate voltage of ±5 V and 7.2 V at a sweeping gate voltage of ± 8 V has been observed for the 1.5 nm-thick IrO x nano layer memory capacitors with a small equivalent oxide thickness of 8 nm. The electrons and holes are trapped in the core and annular regions of the IrO x nanocrystals, respectively, which is explained by Gibbs free energy. High electron and hole-trapping densities are found to be 1.5 x 10 13 /cm 2 and 2 x 10 13 /cm 2 , respectively, due to the small size and high-density of IrO x nanocrystals. Excellent program/erase endurance of >10 6 cycles and good retention of 10 4 s with a good memory window of >1.2 V under a small operation voltage of ± 5 V are obtained. A large memory size of >10 Tbit/sq. in. can be designed by using the IrO x nanocrystals. This study is not only important for the IrO x nanocrystal charge-trapping memory investigation but it will also help to design future metal nanocrystal flash memory.

Measurement of electron density and electron temperature of a cascaded arc plasma using laser Thomson scattering compared to an optical emission spectroscopic approach

Science.gov (United States)

Yong, WANG; Cong, LI; Jielin, SHI; Xingwei, WU; Hongbin, DING

2017-11-01

As advanced linear plasma sources, cascaded arc plasma devices have been used to generate steady plasma with high electron density, high particle flux and low electron temperature. To measure electron density and electron temperature of the plasma device accurately, a laser Thomson scattering (LTS) system, which is generally recognized as the most precise plasma diagnostic method, has been established in our lab in Dalian University of Technology. The electron density has been measured successfully in the region of 4.5 × 1019 m-3 to 7.1 × 1020 m-3 and electron temperature in the region of 0.18 eV to 0.58 eV. For comparison, an optical emission spectroscopy (OES) system was established as well. The results showed that the electron excitation temperature (configuration temperature) measured by OES is significantly higher than the electron temperature (kinetic electron temperature) measured by LTS by up to 40% in the given discharge conditions. The results indicate that the cascaded arc plasma is recombining plasma and it is not in local thermodynamic equilibrium (LTE). This leads to significant error using OES when characterizing the electron temperature in a non-LTE plasma.

Interferometric determination of electron density in a high pressure hydrogen arc. 1. Calculation of refraction index

Energy Technology Data Exchange (ETDEWEB)

Radtke, R; Guenther, K; Ulbricht, R [Akademie der Wissenschaften der DDR, Berlin. Zentralinstitut fuer Elektronenphysik

1980-01-14

The refraction index of a hydrogen plasma in LTE was calculated as a function of the wavelength of observation, temperature and pressure, taking into account bound-bound and bound-free transitions of the neutral atom. According to the present calculation, the influence of excited states at higher temperatures is smaller than indicated by Baum et al (Plasma Phys.; 17: 79 (1975)) for argon. Using the calculations presented here, the interferometric investigation of a high pressure hydrogen arc should allow the determination of the electron density with an accuracy of the order of 1%.

Evaluation of macromolecular electron-density map quality using the correlation of local r.m.s. density

International Nuclear Information System (INIS)

Terwilliger, Thomas C.; Berendzen, Joel

1999-01-01

The correlation of local r.m.s. density is shown to be a good measure of the presence of distinct solvent and macromolecule regions in macromolecular electron-density maps. It has recently been shown that the standard deviation of local r.m.s. electron density is a good indicator of the presence of distinct regions of solvent and protein in macromolecular electron-density maps [Terwilliger & Berendzen (1999 ▶). Acta Cryst. D55, 501–505]. Here, it is demonstrated that a complementary measure, the correlation of local r.m.s. density in adjacent regions on the unit cell, is also a good measure of the presence of distinct solvent and protein regions. The correlation of local r.m.s. density is essentially a measure of how contiguous the solvent (and protein) regions are in the electron-density map. This statistic can be calculated in real space or in reciprocal space and has potential uses in evaluation of heavy-atom solutions in the MIR and MAD methods as well as for evaluation of trial phase sets in ab initio phasing procedures

Charge density of 58Ni, by scattering of electrons at high moment transfer

International Nuclear Information System (INIS)

Turck, Sylvaine

1976-01-01

Due to the unique electromagnetic interaction involved, electron elastic scattering allows a nuclear structure to be tested through nucleus magnetisation and charge distribution. In a first part, this research thesis reports experiments performed on the Saclay Linear Accelerator (ALS) with the 58 Ni nucleus, a well closed magic nucleus which allows a qualitative comparison between experiments and Hartree-Fock calculations to be performed. The author presents the experimental set-up, describes data acquisition, data reduction and corrections. The second part proposes a theoretical introduction to electron scattering, discusses the analysis without model, and theoretical predictions of charge density

Density response to central electron heating: theoretical investigations and experimental observations in ASDEX Upgrade

Science.gov (United States)

Angioni, C.; Peeters, A. G.; Garbet, X.; Manini, A.; Ryter, F.; ASDEX Upgrade Team

2004-08-01

Theory of ion temperature gradient (ITG) and trapped electron modes (TEMs) is applied to the study of particle transport in experimental conditions with central electron heating. It is shown that in the unstable domain of TEMs, the electron thermodiffusive flux is directed outwards. By means of such a flux, a mechanism is identified likely to account for density flattening with central electron heating. Theoretical predictions are compared with experimental observations in ASDEX Upgrade. A parameter domain (including L- and H-mode plasmas) is identified, in which flattening with central electron heating is observed in the experiments. In general, this domain turns out to be the same domain in which the dominant plasma instability is a TEM. On the contrary, the dominant instability is an ITG in plasmas whose density profile is not affected significantly by central electron heating. The flattening predicted by quasi-linear theory for low density L-mode plasmas is too small compared to the experimental observations. At very high density, even when the dominant instability is an ITG, electron heating can provide density flattening, via the coupling with the ion heat channel. In these conditions the anomalous diffusivity increases in response to the increased ion heat flux, while the large collisionality makes the anomalous pinch small and the Ware pinch important.

A new Langmuir probe concept for rapid sampling of space plasma electron density

International Nuclear Information System (INIS)

Jacobsen, K S; Pedersen, A; Moen, J I; Bekkeng, T A

2010-01-01

In this paper we describe a new Langmuir probe concept that was invented for the in situ investigation of HF radar backscatter irregularities, with the capability to measure absolute electron density at a resolution sufficient to resolve the finest conceivable structure in an ionospheric plasma. The instrument consists of two or more fixed-bias cylindrical Langmuir probes whose radius is small compared to the Debye length. With this configuration, it is possible to acquire absolute electron density measurements independent of electron temperature and rocket/satellite potential. The system was flown on the ICI-2 sounding rocket to investigate the plasma irregularities which cause HF backscatter. It had a sampling rate of more than 5 kHz and successfully measured structures down to the scale of one electron gyro radius. The system can easily be adapted for any ionospheric rocket or satellite, and provides high-quality measurements of electron density at any desired resolution

The electron localization as the information content of the conditional pair density

Energy Technology Data Exchange (ETDEWEB)

Urbina, Andres S.; Torres, F. Javier [Universidad San Francisco de Quito (USFQ), Grupo de Química Computacional y Teórica (QCT-USFQ), Departamento de Química e Ingeniería Química, Diego de Robles y Via Interoceanica, Quito 17-1200-841 (Ecuador); Universidad San Francisco de Quito (USFQ), Instituto de Simulación Computacional (ISC-USFQ), Diego de Robles y Via Interoceanica, Quito 17-1200-841 (Ecuador); Rincon, Luis, E-mail: lrincon@usfq.edu.ec, E-mail: lrincon@ula.ve [Universidad San Francisco de Quito (USFQ), Grupo de Química Computacional y Teórica (QCT-USFQ), Departamento de Química e Ingeniería Química, Diego de Robles y Via Interoceanica, Quito 17-1200-841 (Ecuador); Universidad San Francisco de Quito (USFQ), Instituto de Simulación Computacional (ISC-USFQ), Diego de Robles y Via Interoceanica, Quito 17-1200-841 (Ecuador); Departamento de Química, Facultad de Ciencias, Universidad de Los Andes (ULA), La Hechicera, Mérida-5101 (Venezuela, Bolivarian Republic of)

2016-06-28

In the present work, the information gained by an electron for “knowing” about the position of another electron with the same spin is calculated using the Kullback-Leibler divergence (D{sub KL}) between the same-spin conditional pair probability density and the marginal probability. D{sub KL} is proposed as an electron localization measurement, based on the observation that regions of the space with high information gain can be associated with strong correlated localized electrons. Taking into consideration the scaling of D{sub KL} with the number of σ-spin electrons of a system (N{sup σ}), the quantity χ = (N{sup σ} − 1) D{sub KL}f{sub cut} is introduced as a general descriptor that allows the quantification of the electron localization in the space. f{sub cut} is defined such that it goes smoothly to zero for negligible densities. χ is computed for a selection of atomic and molecular systems in order to test its capability to determine the region in space where electrons are localized. As a general conclusion, χ is able to explain the electron structure of molecules on the basis of chemical grounds with a high degree of success and to produce a clear differentiation of the localization of electrons that can be traced to the fluctuation in the average number of electrons in these regions.

Flexible and twistable non-volatile memory cell array with all-organic one diode-one resistor architecture.

Science.gov (United States)

Ji, Yongsung; Zeigler, David F; Lee, Dong Su; Choi, Hyejung; Jen, Alex K-Y; Ko, Heung Cho; Kim, Tae-Wook

2013-01-01

Flexible organic memory devices are one of the integral components for future flexible organic electronics. However, high-density all-organic memory cell arrays on malleable substrates without cross-talk have not been demonstrated because of difficulties in their fabrication and relatively poor performances to date. Here we demonstrate the first flexible all-organic 64-bit memory cell array possessing one diode-one resistor architectures. Our all-organic one diode-one resistor cell exhibits excellent rewritable switching characteristics, even during and after harsh physical stresses. The write-read-erase-read output sequence of the cells perfectly correspond to the external pulse signal regardless of substrate deformation. The one diode-one resistor cell array is clearly addressed at the specified cells and encoded letters based on the standard ASCII character code. Our study on integrated organic memory cell arrays suggests that the all-organic one diode-one resistor cell architecture is suitable for high-density flexible organic memory applications in the future.

Electron mobility in supercritical ethane as a function of density and temperature

International Nuclear Information System (INIS)

Nishikawa, M.; Holroyd, R.A.; Sowada, U.

1980-01-01

The electron mobility is reported for ethane as a function of density at various temperatures above T/sub c/. The high pressure cell used permits measurements to 200 atm. Our analysis shows that theory is consistent with the ethane mobility results at low and intermediate densities. At densities less than 1 x 10 21 molecules/cm 3 electrons are scattered by isolated ethane molecules and the Lorentz equation is valid. At intermediate densities, μ/sub e/ correlates with the square of the velocity of sound, indicating that in dense fluids the adiabatic compressibility must be included. The data are consistent with a modified Cohen--Lekner equation, and the minimum in μ/sub e/N observed at densities just below d/sub c/ is qualitatively accounted for by changes in the adiabatic compressibility. Thus the concept of quasilocalization, suggested by others to qualitatively explain such minima, is unnecessary here. At higher densities an additional, unspecified, scattering mechanism becomes important

Sleep spindles during a nap correlate with post sleep memory performance for highly rewarded word-pairs.

Science.gov (United States)

Studte, Sara; Bridger, Emma; Mecklinger, Axel

2017-04-01

The consolidation of new associations is thought to depend in part on physiological processes engaged during non-REM (NREM) sleep, such as slow oscillations and sleep spindles. Moreover, NREM sleep is thought to selectively benefit associations that are adaptive for the future. In line with this, the current study investigated whether different reward cues at encoding are associated with changes in sleep physiology and memory retention. Participants' associative memory was tested after learning a list of arbitrarily paired words both before and after taking a 90-min nap. During learning, word-pairs were preceded by a cue indicating either a high or a low reward for correct memory performance at test. The motivation manipulation successfully impacted retention such that memory declined to a greater extent from pre- to post sleep for low rewarded than for high rewarded word-pairs. In line with previous studies, positive correlations between spindle density during NREM sleep and general memory performance pre- and post-sleep were found. In addition to this, however, a selective positive relationship between memory performance for highly rewarded word-pairs at posttest and spindle density during NREM sleep was also observed. These results support the view that motivationally salient memories are preferentially consolidated and that sleep spindles may be an important underlying mechanism for selective consolidation. Copyright © 2016 Elsevier Inc. All rights reserved.

Exploring memory hierarchy design with emerging memory technologies

CERN Document Server

Sun, Guangyu

2014-01-01

This book equips readers with tools for computer architecture of high performance, low power, and high reliability memory hierarchy in computer systems based on emerging memory technologies, such as STTRAM, PCM, FBDRAM, etc.  The techniques described offer advantages of high density, near-zero static power, and immunity to soft errors, which have the potential of overcoming the “memory wall.”  The authors discuss memory design from various perspectives: emerging memory technologies are employed in the memory hierarchy with novel architecture modification;  hybrid memory structure is introduced to leverage advantages from multiple memory technologies; an analytical model named “Moguls” is introduced to explore quantitatively the optimization design of a memory hierarchy; finally, the vulnerability of the CMPs to radiation-based soft errors is improved by replacing different levels of on-chip memory with STT-RAMs.   ·         Provides a holistic study of using emerging memory technologies i...

Compact holographic memory and its application to optical pattern recognition

Science.gov (United States)

Chao, Tien-Hsin; Reyes, George F.; Zhou, Hanying

2001-03-01

JPL is developing a high-density, nonvolatile Compact Holographic Data Storage (CHDS) system to enable large- capacity, high-speed, low power consumption, and read/write of data for commercial and space applications. This CHDS system consists of laser diodes, photorefractive crystal, spatial light modulator, photodetector array, and I/O electronic interface. In operation, pages of information would be recorded and retrieved with random access and high- speed. In this paper, recent technology progress in developing this CHDS at JPL will be presented. The recent applications of the CHDS to optical pattern recognition, as a high-density, high transfer rate memory bank will also be discussed.

Breaking the current density threshold in spin-orbit-torque magnetic random access memory

Science.gov (United States)

Zhang, Yin; Yuan, H. Y.; Wang, X. S.; Wang, X. R.

2018-04-01

Spin-orbit-torque magnetic random access memory (SOT-MRAM) is a promising technology for the next generation of data storage devices. The main bottleneck of this technology is the high reversal current density threshold. This outstanding problem is now solved by a new strategy in which the magnitude of the driven current density is fixed while the current direction varies with time. The theoretical limit of minimal reversal current density is only a fraction (the Gilbert damping coefficient) of the threshold current density of the conventional strategy. The Euler-Lagrange equation for the fastest magnetization reversal path and the optimal current pulse is derived for an arbitrary magnetic cell and arbitrary spin-orbit torque. The theoretical limit of minimal reversal current density and current density for a GHz switching rate of the new reversal strategy for CoFeB/Ta SOT-MRAMs are, respectively, of the order of 105 A/cm 2 and 106 A/cm 2 far below 107 A/cm 2 and 108 A/cm 2 in the conventional strategy. Furthermore, no external magnetic field is needed for a deterministic reversal in the new strategy.

Communication: Investigation of the electron momentum density distribution of nanodiamonds by electron energy-loss spectroscopy

Energy Technology Data Exchange (ETDEWEB)

Feng, Zhenbao; Yang, Bing; Lin, Yangming; Su, Dangsheng, E-mail: dssu@imr.ac.cn [Shenyang National Laboratory of Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang 110016 (China)

2015-12-07

The electron momentum distribution of detonation nanodiamonds (DND) was investigated by recording electron energy-loss spectra at large momentum transfer in the transmission electron microscope (TEM), which is known as electron Compton scattering from solid (ECOSS). Compton profile of diamond film obtained by ECOSS was found in good agreement with prior photon experimental measurement and theoretical calculation that for bulk diamond. Compared to the diamond film, the valence Compton profile of DND was found to be narrower, which indicates a more delocalization of the ground-state charge density for the latter. Combining with other TEM characterizations such as high-resolution transmission electron spectroscopy, diffraction, and energy dispersive X-ray spectroscopy measurements, ECOSS was shown to be a great potential technique to study ground-state electronic properties of nanomaterials.

Limitations in accurate electron density studies

International Nuclear Information System (INIS)

Wal, R. van der.

1982-01-01

Most of X-ray diffraction studies are devoted to the determination of three-dimensional crystal structures from the electron density distributions. In these cases the density distributions are described by the independent atom model (IAM model), which consists of a superposition of spherically averaged free atom densities, which are smeared by thermal vibrations. During the last few decades studies have been made into the deviations of the density distribution from the IAM model, which enables a study of the chemical binding between atoms. The total density can be described using pseudo-atom multipole models as a superposition of aspherical pseudo-atom densities. A fundamental problem is that the separation of this density into an IAM and a deformation part is not unique. This thesis considers the problem and besides deformation densities from X-ray diffraction also considers the corresponding deformation electric field and deformation potential. (C.F.)

Topside Electron Density Representations for Middle and High Latitudes: A Topside Parameterization for E-CHAIM Based On the NeQuick

Science.gov (United States)

Themens, David R.; Jayachandran, P. T.; Bilitza, Dieter; Erickson, Philip J.; Häggström, Ingemar; Lyashenko, Mykhaylo V.; Reid, Benjamin; Varney, Roger H.; Pustovalova, Ljubov

2018-02-01

In this study, we present a topside model representation to be used by the Empirical Canadian High Arctic Ionospheric Model (E-CHAIM). In the process of this, we also present a comprehensive evaluation of the NeQuick's, and by extension the International Reference Ionosphere's, topside electron density model for middle and high latitudes in the Northern Hemisphere. Using data gathered from all available incoherent scatter radars, topside sounders, and Global Navigation Satellite System Radio Occultation satellites, we show that the current NeQuick parameterization suboptimally represents the shape of the topside electron density profile at these latitudes and performs poorly in the representation of seasonal and solar cycle variations of the topside scale thickness. Despite this, the simple, one variable, NeQuick model is a powerful tool for modeling the topside ionosphere. By refitting the parameters that define the maximum topside scale thickness and the rate of increase of the scale height within the NeQuick topside model function, r and g, respectively, and refitting the model's parameterization of the scale height at the F region peak, H0, we find considerable improvement in the NeQuick's ability to represent the topside shape and behavior. Building on these results, we present a new topside model extension of the E-CHAIM based on the revised NeQuick function. Overall, root-mean-square errors in topside electron density are improved over the traditional International Reference Ionosphere/NeQuick topside by 31% for a new NeQuick parameterization and by 36% for a newly proposed topside for E-CHAIM.

Properties of short-range and long-range correlation energy density functionals from electron-electron coalescence

International Nuclear Information System (INIS)

Gori-Giorgi, Paola; Savin, Andreas

2006-01-01

The combination of density-functional theory with other approaches to the many-electron problem through the separation of the electron-electron interaction into a short-range and a long-range contribution is a promising method, which is raising more and more interest in recent years. In this work some properties of the corresponding correlation energy functionals are derived by studying the electron-electron coalescence condition for a modified (long-range-only) interaction. A general relation for the on-top (zero electron-electron distance) pair density is derived, and its usefulness is discussed with some examples. For the special case of the uniform electron gas, a simple parametrization of the on-top pair density for a long-range only interaction is presented and supported by calculations within the ''extended Overhauser model.'' The results of this work can be used to build self-interaction corrected short-range correlation energy functionals

Handbook of polymer coatings for electronics chemistry, technology and applications

CERN Document Server

Licari, James J

1990-01-01

This completely revised edition remains the only comprehensive treatise on polymer coatings for electronics. Since the original edition, the applications of coatings for the environmental protection of electronic systems have greatly increased, largely driven by the competitive need to reduce costs, weight and volume. The demands for high-speed circuits for the rapid processing of signals and data, high-density circuits for the storage and retrieval of megabits of memory, and the improved reliability required of electronics for guiding and controlling weapons and space vehicles have triggered

Path integrals for electronic densities, reactivity indices, and localization functions in quantum systems.

Science.gov (United States)

Putz, Mihai V

2009-11-10

The density matrix theory, the ancestor of density functional theory, provides the immediate framework for Path Integral (PI) development, allowing the canonical density be extended for the many-electronic systems through the density functional closure relationship. Yet, the use of path integral formalism for electronic density prescription presents several advantages: assures the inner quantum mechanical description of the system by parameterized paths; averages the quantum fluctuations; behaves as the propagator for time-space evolution of quantum information; resembles Schrödinger equation; allows quantum statistical description of the system through partition function computing. In this framework, four levels of path integral formalism were presented: the Feynman quantum mechanical, the semiclassical, the Feynman-Kleinert effective classical, and the Fokker-Planck non-equilibrium ones. In each case the density matrix or/and the canonical density were rigorously defined and presented. The practical specializations for quantum free and harmonic motions, for statistical high and low temperature limits, the smearing justification for the Bohr's quantum stability postulate with the paradigmatic Hydrogen atomic excursion, along the quantum chemical calculation of semiclassical electronegativity and hardness, of chemical action and Mulliken electronegativity, as well as by the Markovian generalizations of Becke-Edgecombe electronic focalization functions - all advocate for the reliability of assuming PI formalism of quantum mechanics as a versatile one, suited for analytically and/or computationally modeling of a variety of fundamental physical and chemical reactivity concepts characterizing the (density driving) many-electronic systems.

Path Integrals for Electronic Densities, Reactivity Indices, and Localization Functions in Quantum Systems

Directory of Open Access Journals (Sweden)

Mihai V. Putz

2009-11-01

Full Text Available The density matrix theory, the ancestor of density functional theory, provides the immediate framework for Path Integral (PI development, allowing the canonical density be extended for the many-electronic systems through the density functional closure relationship. Yet, the use of path integral formalism for electronic density prescription presents several advantages: assures the inner quantum mechanical description of the system by parameterized paths; averages the quantum fluctuations; behaves as the propagator for time-space evolution of quantum information; resembles Schrödinger equation; allows quantum statistical description of the system through partition function computing. In this framework, four levels of path integral formalism were presented: the Feynman quantum mechanical, the semiclassical, the Feynman-Kleinert effective classical, and the Fokker-Planck non-equilibrium ones. In each case the density matrix or/and the canonical density were rigorously defined and presented. The practical specializations for quantum free and harmonic motions, for statistical high and low temperature limits, the smearing justification for the Bohr’s quantum stability postulate with the paradigmatic Hydrogen atomic excursion, along the quantum chemical calculation of semiclassical electronegativity and hardness, of chemical action and Mulliken electronegativity, as well as by the Markovian generalizations of Becke-Edgecombe electronic focalization functions – all advocate for the reliability of assuming PI formalism of quantum mechanics as a versatile one, suited for analytically and/or computationally modeling of a variety of fundamental physical and chemical reactivity concepts characterizing the (density driving many-electronic systems.

Memory function formalism applied to electronic transport in disordered systems

International Nuclear Information System (INIS)

Cunha Lima, I.C. da

1984-01-01

Memory function formalism is briefly reviewed and applied to electronic transport using the projection operator technique. The resistivity of a disordered 2-D electron gas under strong magnetic field is obtained in terms of force-force correlation function. (Author) [pt

Reassessment of the electron density in Cu2O using γ-ray diffraction.

Science.gov (United States)

Jauch, Wolfgang; Reehuis, Manfred

2014-12-01

The electron-density distribution in Cu2O has been critically reexamined to test controversial conclusions from earlier experimental and theoretical studies. The electron density is derived via multipole refinement of high-quality single-crystal diffraction data, collected at room temperature with 316.5 keV gamma radiation. Four γ-lines in the energy range 200-600 keV have been used to extrapolate extinction-free low-order structure factors. The remaining extinction corrections refine to a crystal mosaicity identical to the observed one. There is no support for anharmonic contributions to the thermal parameters. Important features of the derived electron density are (i) a partially filled d_{z^2} orbital, (ii) an incomplete ionization of Cu and O, and (iii) no interstitial Cu-Cu charge pileup, thereby refuting the covalent bonding hypothesis.

A high-energy electron beam ion trap for production of high-charge high-Z ions

International Nuclear Information System (INIS)

Knapp, D.A.; Marrs, R.E.; Elliott, S.R.; Magee, E.W.; Zasadzinski, R.

1993-01-01

We have developed a new high-energy electron beam ion trap, the first laboratory source of low-energy, few-electron, high-Z ions. We describe the device and report measurements of its performance, including the electron beam diameter, current density and energy, and measurements of the ionization balance for several high-Z elements in the trap. This device opens up a wide range of possible experiments in atomic physics, plasma physics, and nuclear physics. (orig.)

Improved GAMMA 10 tandem mirror confinement in high density plasma

International Nuclear Information System (INIS)

Yatsu, K.; Cho, T.; Higaki, H.; Hirata, M.; Hojo, H.; Ichimura, M.; Ishii, K.; Ishimoto, Y.; Itakura, A.; Katanuma, I.; Kohagura, J.; Minami, R.; Nakashima, Y.; Numakura, T.; Saito, T.; Saosaki, S.; Takemura, Y.; Tatematsu, Y.; Yoshida, M.; Yoshikawa, M.

2003-01-01

GAMMA 10 experiments have advanced in high density experiments after the last IAEA fusion energy conference in 2000 where we reported the production of the high density plasma through use of ion cyclotron range of frequency heating at a high harmonic frequency and neutral beam injection in the anchor cells. However, the diamagnetic signal of the plasma decreased when electron cyclotron resonance heating was applied for the potential formation. Recently a high density plasma has been obtained without degradation of the diamagnetic signal and with much improved reproducibility than before. The high density plasma was attained through adjustment of the spacing of the conducting plates installed in the anchor transition regions. The potential confinement of the plasma has been extensively studied. Dependences of the ion confinement time, ion-energy confinement time and plasma confining potential on plasma density were obtained for the first time in the high density region up to a density of 4x10 18 m -3 . (author)

THE ELECTRON DENSITY IN EXPLOSIVE TRANSITION REGION EVENTS OBSERVED BY IRIS

Energy Technology Data Exchange (ETDEWEB)

Doschek, G. A.; Warren, H. P. [Space Science Division, Naval Research Laboratory, 4555 Overlook Avenue, SW, Washington, DC 20375 (United States); Young, P. R. [College of Science, George Mason University, 4400 University Drive, Fairfax, VA 22030 (United States)

2016-11-20

We discuss the intensity ratio of the O iv line at 1401.16 Å to the Si iv line at 1402.77 Å in Interface Region Imaging Spectrograph ( IRIS ) spectra. This intensity ratio is important if it can be used to measure high electron densities that cannot be measured using line intensity ratios of two different O iv lines from the multiplet within the IRIS wavelength range. Our discussion is in terms of considerably earlier observations made from the Skylab manned space station and other spectrometers on orbiting spacecraft. The earlier data on the O iv and Si iv ratio and other intersystem line ratios not available to IRIS are complementary to IRIS data. In this paper, we adopt a simple interpretation based on electron density. We adopt a set of assumptions and calculate the electron density as a function of velocity in the Si iv line profiles of two explosive events. At zero velocity the densities are about 2–3 × 10{sup 11} cm{sup -3}, and near 200 km s{sup -1} outflow speed the densities are about 10{sup 12} cm{sup -3}. The densities increase with outflow speed up to about 150 km s{sup -1} after which they level off. Because of the difference in the temperature of formation of the two lines and other possible effects such as non-ionization equilibrium, these density measurements do not have the precision that would be available if there were some additional lines near the formation temperature of O iv.

High-Density Lipoprotein Cholesterol Level Relates to Working Memory, Immediate and Delayed Cued Recall in Brazilian Older Adults: The Role of Cognitive Reserve.

Science.gov (United States)

Ihle, Andreas; Gouveia, Élvio R; Gouveia, Bruna R; Freitas, Duarte L; Jurema, Jefferson; Tinôco, Maria A; Kliegel, Matthias

2017-01-01

The present study set out to investigate the relation of the high-density lipoprotein cholesterol (HDL-C) level to cognitive performance and its interplay with key markers of cognitive reserve in a large sample of older adults. We assessed tests of working memory, immediate and delayed cued recall in 701 older adults from Amazonas, Brazil. The HDL-C level was derived from fasting blood samples. In addition, we interviewed individuals on their education, past occupation, and cognitive leisure activity. A critically low HDL-C level (cued recall. Moderation analyses suggested that the relations of the HDL-C level to working memory and delayed cued recall were negligible in individuals with longer education, a higher cognitive level of the job, and greater engagement in cognitive leisure activity. Cognitive reserve accumulated during the life course may reduce the detrimental influences of a critically low HDL-C level on cognitive functioning in old age. © 2017 S. Karger AG, Basel.

A zero density change phase change memory material: GeTe-O structural characteristics upon crystallisation.

Science.gov (United States)

Zhou, Xilin; Dong, Weiling; Zhang, Hao; Simpson, Robert E

2015-06-11

Oxygen-doped germanium telluride phase change materials are proposed for high temperature applications. Up to 8 at.% oxygen is readily incorporated into GeTe, causing an increased crystallisation temperature and activation energy. The rhombohedral structure of the GeTe crystal is preserved in the oxygen doped films. For higher oxygen concentrations the material is found to phase separate into GeO2 and TeO2, which inhibits the technologically useful abrupt change in properties. Increasing the oxygen content in GeTe-O reduces the difference in film thickness and mass density between the amorphous and crystalline states. For oxygen concentrations between 5 and 6 at.%, the amorphous material and the crystalline material have the same density. Above 6 at.% O doping, crystallisation exhibits an anomalous density change, where the volume of the crystalline state is larger than that of the amorphous. The high thermal stability and zero-density change characteristic of Oxygen-incorporated GeTe, is recommended for efficient and low stress phase change memory devices that may operate at elevated temperatures.

Simulation of electron energy loss spectra of nanomaterials with linear-scaling density functional theory

International Nuclear Information System (INIS)

Tait, E W; Payne, M C; Ratcliff, L E; Haynes, P D; Hine, N D M

2016-01-01

Experimental techniques for electron energy loss spectroscopy (EELS) combine high energy resolution with high spatial resolution. They are therefore powerful tools for investigating the local electronic structure of complex systems such as nanostructures, interfaces and even individual defects. Interpretation of experimental electron energy loss spectra is often challenging and can require theoretical modelling of candidate structures, which themselves may be large and complex, beyond the capabilities of traditional cubic-scaling density functional theory. In this work, we present functionality to compute electron energy loss spectra within the onetep linear-scaling density functional theory code. We first demonstrate that simulated spectra agree with those computed using conventional plane wave pseudopotential methods to a high degree of precision. The ability of onetep to tackle large problems is then exploited to investigate convergence of spectra with respect to supercell size. Finally, we apply the novel functionality to a study of the electron energy loss spectra of defects on the (1 0 1) surface of an anatase slab and determine concentrations of defects which might be experimentally detectable. (paper)

Impurity screening in high density plasmas in tokamaks with a limiter configuration

International Nuclear Information System (INIS)

Ferro, C.; Zanino, R.

1992-01-01

Impurity screening in high density plasmas in tokamaks with a limiter configuration is investigated by means of a simple semi-analytical model. An iterative scheme is devised, in order to determine self-consistently the values of scrape-off layer thickness, edge electron density and temperature, and main plasma contamination parameter Z eff , as a function of given average electron density and temperature in the main plasma and given input power. The model is applied to the poloidal limiter case of the Frascati Tokamak Upgrade, and results are compared with experimental data. A reasonable agreement between the trends is found, emphasizing the importance of a high edge plasma density for obtaining a clean main plasma in limiter tokamaks. (orig.)

A high dutycycle low cost multichannel analyser for electron spectroscopy

International Nuclear Information System (INIS)

Norell, K.E.; Baltzer, P.

1983-03-01

A high dutycycle multichannel analyzer has been designed and used in time-of-flight electron spectroscopy. The memory capacity is 64k counts. The number of channels is 8192 with a time resolution of 100 ns. An oscilloscope is used to display the spectra synchronous with the counting. The unit has been built with standard electronic components. (author)

High Energy Density Sciences with High Power Lasers at SACLA

Science.gov (United States)

Kodama, Ryosuke

2013-10-01

One of the interesting topics on high energy density sciences with high power lasers is creation of extremely high pressures in material. The pressures of more than 0.1 TPa are the energy density corresponding to the chemical bonding energy, resulting in expectation of dramatic changes in the chemical reactions. At pressures of more than TPa, most of material would be melted on the shock Hugoniot curve. However, if the temperature is less than 1eV or lower than a melting point at pressures of more than TPa, novel solid states of matter must be created through a pressured phase transition. One of the interesting materials must be carbon. At pressures of more than TPa, the diamond structure changes to BC and cubic at more than 3TPa. To create such novel states of matter, several kinds of isentropic-like compression techniques are being developed with high power lasers. To explore the ``Tera-Pascal Science,'' now we have a new tool which is an x-ray free electron laser as well as high power lasers. The XFEL will clear the details of the HED states and also efficiently create hot dense matter. We have started a new project on high energy density sciences using an XFEL (SACLA) in Japan, which is a HERMES (High Energy density Revolution of Matter in Extreme States) project.

Measuring the Density of a Molecular Cluster Injector via Visible Emission from an Electron Beam

Energy Technology Data Exchange (ETDEWEB)

Lundberg, D. P.; Kaita, R.; Majeski, R. M.; Stotler, D. P.

2010-06-28

A method to measure the density distribution of a dense hydrogen gas jet is pre- sented. A Mach 5.5 nozzle is cooled to 80K to form a flow capable of molecular cluster formation. A 250V, 10mA electron beam collides with the jet and produces Hα emission that is viewed by a fast camera. The high density of the jet, several 10¹⁶cm^-3, results in substantial electron depletion, which attenuates the H_α emission. The attenuated emission measurement, combined with a simplified electron-molecule collision model, allows us to determine the molecular density profile via a simple iterative calculation.

Scientific developments of liquid crystal-based optical memory: a review

Science.gov (United States)

Prakash, Jai; Chandran, Achu; Biradar, Ashok M.

2017-01-01

The memory behavior in liquid crystals (LCs), although rarely observed, has made very significant headway over the past three decades since their discovery in nematic type LCs. It has gone from a mere scientific curiosity to application in variety of commodities. The memory element formed by numerous LCs have been protected by patents, and some commercialized, and used as compensation to non-volatile memory devices, and as memory in personal computers and digital cameras. They also have the low cost, large area, high speed, and high density memory needed for advanced computers and digital electronics. Short and long duration memory behavior for industrial applications have been obtained from several LC materials, and an LC memory with interesting features and applications has been demonstrated using numerous LCs. However, considerable challenges still exist in searching for highly efficient, stable, and long-lifespan materials and methods so that the development of useful memory devices is possible. This review focuses on the scientific and technological approach of fascinating applications of LC-based memory. We address the introduction, development status, novel design and engineering principles, and parameters of LC memory. We also address how the amalgamation of LCs could bring significant change/improvement in memory effects in the emerging field of nanotechnology, and the application of LC memory as the active component for futuristic and interesting memory devices.

Spin polarized and density modulated phases in symmetric electron-electron and electron-hole bilayers.

Science.gov (United States)

Kumar, Krishan; Moudgil, R K

2012-10-17

We have studied symmetric electron-electron and electron-hole bilayers to explore the stable homogeneous spin phase and the feasibility of inhomogeneous charge-/spin-density ground states. The former is resolved by comparing the ground-state energies in states of different spin polarizations, while the latter is resolved by searching for a divergence in the wavevector-dependent static charge/spin susceptibility. For this endeavour, we have used the dielectric approach within the self-consistent mean-field theory of Singwi et al. We find that the inter-layer interactions tend to change an abrupt spin-polarization transition of an isolated layer into a nearly gradual one, even though the partially spin-polarized phases are not clearly stable within the accuracy of our calculation. The transition density is seen to decrease with a reduction in layer spacing, implying a suppression of spin polarization by inter-layer interactions. Indeed, the suppression shows up distinctly in the spin susceptibility computed from the spin-polarization dependence of the ground-state energy. However, below a critical layer spacing, the unpolarized liquid becomes unstable against a charge-density-wave (CDW) ground state at a density preceding full spin polarization, with the transition density for the CDW state increasing on further reduction in the layer spacing. Due to attractive e-h correlations, the CDW state is found to be more pronounced in the e-h bilayer. On the other hand, the static spin susceptibility diverges only in the long-wavelength limit, which simply represents a transition to the homogeneous spin-polarized phase.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

Energy Technology Data Exchange (ETDEWEB)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece); Department of Physics, University of Crete, P.O. Box 2208, GR-71003 Heraklion, Crete (Greece); Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G. [Microelectronics Research Group, IESL, Foundation for Research and Technology-Hellas (FORTH), P.O. Box 1385, GR-71110 Heraklion, Crete (Greece)

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

International Nuclear Information System (INIS)

Bairamis, A.; Zervos, Ch.; Georgakilas, A.; Adikimenakis, A.; Kostopoulos, A.; Kayambaki, M.; Tsagaraki, K.; Konstantinidis, G.

2014-01-01

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10 12 to 2.1 × 10 13 cm −2 as the AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10 13 cm −2 on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm 2 /Vs for a density of 1.3 × 10 13 cm −2 . The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.

Simulation of the electron cloud density in BEPC II

International Nuclear Information System (INIS)

Liu Yudong; Guo Zhiyuan; Wang Jiuqing

2004-01-01

Electron Cloud Instability (ECI) may take place in positron storage ring when the machine is operated with multi-bunch positron beam. According to the actual shape of the vacuum chamber in the BEPC II, a program has been developed. With the code, authors can calculate the electron density in the chamber with different length of antechamber and the different secondary electron yield respectively. By the simulation, the possibility to put clearing electrodes in the chamber to reduce the electron density in the central region of the chamber is investigated. The simulation provides meaningful and important results for the BEPC II project and electron cloud instability research

CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

KAUST Repository

Ghoneim, Mohamed T.

2014-12-01

Today\\'s mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

CMOS compatible generic batch process towards flexible memory on bulk monocrystalline silicon (100)

KAUST Repository

Ghoneim, Mohamed T.; Rojas, Jhonathan Prieto; Kutbee, Arwa T.; Hanna, Amir; Hussain, Muhammad Mustafa

2014-01-01

Today's mainstream flexible electronics research is geared towards replacing silicon either totally, by having organic devices on organic substrates, or partially, by transferring inorganic devices onto organic substrates. In this work, we present a pragmatic approach combining the desired flexibility of organic substrates and the ultra-high integration density, inherent in silicon semiconductor industry, to transform bulk/inflexible silicon into an ultra-thin mono-crystalline fabric. We also show the effectiveness of this approach in achieving fully flexible electronic systems. Furthermore, we provide a progress report on fabricating various memory devices on flexible silicon fabric and insights for completely flexible memory modules on silicon fabric.

Studies of electron collisions with polyatomic molecules using distributed-memory parallel computers

International Nuclear Information System (INIS)

Winstead, C.; Hipes, P.G.; Lima, M.A.P.; McKoy, V.

1991-01-01

Elastic electron scattering cross sections from 5--30 eV are reported for the molecules C 2 H 4 , C 2 H 6 , C 3 H 8 , Si 2 H 6 , and GeH 4 , obtained using an implementation of the Schwinger multichannel method for distributed-memory parallel computer architectures. These results, obtained within the static-exchange approximation, are in generally good agreement with the available experimental data. These calculations demonstrate the potential of highly parallel computation in the study of collisions between low-energy electrons and polyatomic gases. The computational methodology discussed is also directly applicable to the calculation of elastic cross sections at higher levels of approximation (target polarization) and of electronic excitation cross sections

False memories in highly superior autobiographical memory individuals

Science.gov (United States)

Patihis, Lawrence; Frenda, Steven J.; LePort, Aurora K. R.; Petersen, Nicole; Nichols, Rebecca M.; Stark, Craig E. L.; McGaugh, James L.; Loftus, Elizabeth F.

2013-01-01

The recent identification of highly superior autobiographical memory (HSAM) raised the possibility that there may be individuals who are immune to memory distortions. We measured HSAM participants’ and age- and sex-matched controls’ susceptibility to false memories using several research paradigms. HSAM participants and controls were both susceptible to false recognition of nonpresented critical lure words in an associative word-list task. In a misinformation task, HSAM participants showed higher overall false memory compared with that of controls for details in a photographic slideshow. HSAM participants were equally as likely as controls to mistakenly report they had seen nonexistent footage of a plane crash. Finding false memories in a superior-memory group suggests that malleable reconstructive mechanisms may be fundamental to episodic remembering. Paradoxically, HSAM individuals may retrieve abundant and accurate autobiographical memories using fallible reconstructive processes. PMID:24248358

Quantitative analysis of stress-induced martensites by in situ transmission electron microscopy superelastic tests in Cu-Al-Ni shape memory alloys

International Nuclear Information System (INIS)

No, M.L.; Ibarra, A.; Caillard, D.; San Juan, J.

2010-01-01

Stress-induced martensite nucleation and further growing, in Cu-Al-Ni shape memory alloys, have been studied during in situ superelastic tests in the transmission electron microscope. Two kinds of martensite, β 3 ' and γ 3 ' , are induced and can coexist under stress, both exhibiting in a high density of stacking faults. The interface plane and the orientation relationships between the different variants of such martensites have been determined, and the atomic configurations of the lattices across the interface have been described. Finally, in light of the results, selection rules for the stress-induced promoted martensites at the nano-scale have been established, being determined by the shear direction and the basal plane of the martensite lattice.

High density plasma productions by hydrogen storage electrode in the Tohoku University Heliac

International Nuclear Information System (INIS)

Utoh, H.; Takahashi, H.; Tanaka, Y.; Takenaga, M.; Ogawa, M.; Shinde, J.; Iwazaki, K.; Shinto, K.; Kitajima, S.; Sasao, M.; Nishimura, K.; Inagaki, S.

2005-01-01

In the Tohoku University Heliac (TU-Heliac), the influence of a radial electric field on improved modes has been investigated by an electrode biasing. In both positive and negative biasing experiments by the stainless steel (SUS) electrode (cold-electron or ion collection), the improvement of plasma confinement was clearly observed. Furthermore, by negative biasing with a hot cathode (electron injection), the radial electric fields can be actively controlled as a consequence of the control of the electrode current I E . By using the electrode made of a hydrogen storage metal, for example Titanium (Ti) or Vanadium (V), the following possibility can be expected: (1) ions accelerated from the positive biased electrode allow the simulation for the orbit loss of high-energy particles, (2) the electrons/neutral- particles injected from the negative biased electrode provide the production of the high- density plasma, if hydrogen are successfully stored in the electrode. In this present work, several methods were tried as the treatment for hydrogen storage. In the case of the Ti electrode biased positively after the treatment, the improvement of plasma confinement was observed in He plasma, which were same as the experimental results of the SUS electrode. However, in the electron density profiles inside the electrode position there was difference between the biased plasma by the Ti electrode and that by the SUS electrode. In some of Ar discharges biased negatively with the Ti electrode after the treatment, the electron density and the line intensity of H α increased about 10 times of those before biasing. This phenomenon has not been observed in the Ar plasma biased by the SUS electrode. This result suggested that the Ti electrode injected electrons/neutral-hydrogen into the plasma. This high-density plasma productions were observed only 1 ∼ 3 times in the one treatment for hydrogen storage. By using a Vanadium (V) electrode, productions of the high-density plasma

Luminescence of high density electron-hole plasma in CdS and CdSe in a wide temperature range

International Nuclear Information System (INIS)

Yoshida, H.; Shionoya, S.

1983-01-01

Time-resolved spectra of the spontaneous luminescence of the high density electron-hole plasma (EHP) in CdS and CdSe are observed in a wide range of temperature which is surely higher than the calculated critical temperature for electron-hole liquid formation, in order to carry forward discussion on dynamic nature of the EHP previously observed in 4.2 K experiments. Spectra in the late stage are analyzed, and obtained values of the reduced bandgap energy and chemical potential are compared with those theoretically calculated for higher temperatures. The aspects of the change of the spectral shape in the late stage are hard to understand. Unfortunately no clear conclusion is drawn on the nature of the EHP produced at 4.2 K. The only thing one can say is that the condensed electron-hole liquid state, which is in equilibrium with the exciton state, is not realized. (author)

High density operation on the HT-7 superconducting tokamak

International Nuclear Information System (INIS)

Xiang Gao

2000-01-01

The structure of the operation region has been studied in the HT-7 superconducting tokamak, and progress on the extension of the HT-7 ohmic discharge operation region is reported. A density corresponding to 1.2 times the Greenwald limit was achieved by RF boronization. The density limit appears to be connected to the impurity content and the edge parameters, so the best results are obtained with very clean plasmas and peaked electron density profiles. The peaking factors of electron density profiles for different current and line averaged densities were observed. The density behaviour and the fuelling efficiency for gas puffing (20-30%), pellet injection (70-80%) and molecular beam injection (40-50%) were studied. The core crash sawteeth and MHD behaviour, which were induced by an injected pellet, were observed and the events correlated with the change of current profile and reversed magnetic shear. The MARFE phenomena on HT-7 are summarized. The best correlation has been found between the total input ohmic power and the product of the edge line averaged density and Z eff . HT-7 could be easily operated in the high density region MARFE-free using RF boronization. (author)

Observation of preformed electron-hole Cooper pairs in highly excited ZnO

NARCIS (Netherlands)

Versteegh, M.A.M.; van Lange, A.J.; Stoof, H.T.C.; Dijkhuis, J.I.

2012-01-01

Electrons and holes in a semiconductor form hydrogen-atom-like bound states, called excitons. At high electron-hole densities the attractive Coulomb force becomes screened and excitons can no longer exist. Bardeen-Cooper-Schrieffer theory predicts that at such high densities co-operative many-body

Electronic structure and electron momentum density in TiSi

Energy Technology Data Exchange (ETDEWEB)

Ghaleb, A.M. [Department of Physics, College of Science, University of Kirkuk, Kirkuk (Iraq); Mohammad, F.M. [Department of Physics, College of Science, University of Tikreet, Tikreet (Iraq); Sahariya, Jagrati [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India); Sharma, Mukesh [Physics Division, Forensic Science Laboratory, Jaipur, Rajasthan (India); Ahuja, B.L., E-mail: blahuja@yahoo.com [Department of Physics, University College of Science, M.L. Sukhadia University, Udaipur 313001, Rajasthan (India)

2013-03-01

We report the electron momentum density in titanium monosilicide using {sup 241}Am Compton spectrometer. Experimental Compton profile has been compared with the theoretical profiles computed using linear combination of atomic orbitals (LCAO). The energy bands, density of states and Fermi surface structures of TiSi are reported using the LCAO and the full potential linearized augmented plane wave methods. Theoretical anisotropies in directional Compton profiles are interpreted in terms of energy bands. To confirm the conducting behavior, we also report the real space analysis of experimental Compton profile of TiSi.

Precision Electron Density Measurements in the SSX MHD Wind Tunnel

Science.gov (United States)

Suen-Lewis, Emma M.; Barbano, Luke J.; Shrock, Jaron E.; Kaur, Manjit; Schaffner, David A.; Brown, Michael R.

2017-10-01

We characterize fluctuations of the line averaged electron density of Taylor states produced by the magnetized coaxial plasma gun of the SSX device using a 632.8 nm HeNe laser interferometer. The analysis method uses the electron density dependence of the refractive index of the plasma to determine the electron density of the Taylor states. Typical magnetic field and density values in the SSX device approach about B ≅ 0.3 T and n = 0 . 4 ×1016 cm-3 . Analysis is improved from previous density measurement methods by developing a post-processing method to remove relative phase error between interferometer outputs and to account for approximately linear phase drift due to low-frequency mechanical vibrations of the interferometer. Precision density measurements coupled with local measurements of the magnetic field will allow us to characterize the wave composition of SSX plasma via density vs. magnetic field correlation analysis, and compare the wave composition of SSX plasma with that of the solar wind. Preliminary results indicate that density and magnetic field appear negatively correlated. Work supported by DOE ARPA-E ALPHA program.

High power, high brightness electron beam generation in a pulse-line driven pseudospark discharge

International Nuclear Information System (INIS)

Destler, W.W.; Segalov, Z.; Rodgers, J.; Ramaswamy, K.; Reiser, M.

1993-01-01

High brightness (∼10 10 A/m 2 rad 2 ), high power density (∼10 10 W/cm 2 ) electron beams have been generated by the mating of a hollow-cathode discharge device operating in the pseudospark regime to the output of a high power pulse line accelerator. Very small diameter (∼1 mm) electron beams with currents in the range 500--1000 A and energies in the range 150--300 keV have been generated with effective emittances estimated to be at or below 170 mm mrad. Such emittances are comparable to those achieved in conventional electron beam sources at current densities several orders of magnitude lower than those observed in these experiments

Construction of New Electronic Density Functionals with Error Estimation Through Fitting

DEFF Research Database (Denmark)

Petzold, V.; Bligaard, T.; Jacobsen, K. W.

2012-01-01

We investigate the possibilities and limitations for the development of new electronic density functionals through large-scale fitting to databases of binding energies obtained experimentally or through high-quality calculations. We show that databases with up to a few hundred entries allow for u...

Interplay of charge density wave and spin density wave in high-T{sub c} superconductors

Energy Technology Data Exchange (ETDEWEB)

Pradhan, B. [Government Science College, Malkangiri 764 048 (India)], E-mail: brunda@iopb.res.in; Raj, B.K. [B.J.B. College, Bhubaneswar 751 014 (India); Rout, G.C. [Condensed Matter Physics Group, P.G. Department of Applied Physics and Ballistics, F.M. University, Balasore 756 019 (India)], E-mail: gcr@iopb.res.in

2008-12-01

We present a mean-field theory theoretical model study for the coexistence of the two strongly interacting charge density wave (CDW) and spin density wave (SDW) for high-T{sub c} cuprates in the underdoped region before the onset of the superconductivity in the system. The analytic expressions for the temperature dependence of the CDW and SDW order parameters are derived and solved self-consistently. Their interplay is studied by varying their respective coupling constants. It is observed that in the interplay region both the gap parameters exhibit very strong dependence of their gap values for the coupling constants. Further, the electronic density of states (DOS) for the conduction electrons, which represents the scanning tunneling data, show two gap parameters in the interplay region from these experimental data. Our model can help to determine separately the CDW and SDW parameters.

The calculation of electron density of the non-ideal argon plasma

International Nuclear Information System (INIS)

Jiang Ming; Cheng Xinlu; Yang Xiangdong

2004-01-01

By the screened hydrogenic model, the paper calculates the electron densities of shock-generated argon plasma with temperature T∼2.0 eV and density of plasma ρ∼0.01 g/cm 3 -0.49 g/cm 3 , and studies the influence on electron density caused by interparticle interaction at the different temperature and density of plasma. (author)

False memories in highly superior autobiographical memory individuals

OpenAIRE

Patihis, Lawrence; Frenda, Steven J.; LePort, Aurora K. R.; Petersen, Nicole; Nichols, Rebecca M.; Stark, Craig E. L.; McGaugh, James L.; Loftus, Elizabeth F.

2013-01-01

The recent identification of highly superior autobiographical memory (HSAM) raised the possibility that there may be individuals who are immune to memory distortions. We measured HSAM participants' and age- and sex-matched controls' susceptibility to false memories using several research paradigms. HSAM participants and controls were both susceptible to false recognition of nonpresented critical lure words in an associative word-list task. In a misinformation task, HSAM participants showed hi...

Electron scattering by nuclei and transition charge densities

International Nuclear Information System (INIS)

Gul'karov, I.S.

1988-01-01

Transition charge densities for states of electric type, for nuclei with A≤40--50 as obtained from data on inelastic electron scattering, are studied. The formalism of electroexcitation of nuclei is considered, together with various models (macroscopic and microscopic) used to calculate form factors, transition charge densities, and the moments of these densities: B(Eλ) and R/sub λ/ . The macroscopic models are derived microscopically, and it is shown that the model-independent sum rules lead to the same transition densities as calculations based on various hydrodynamic models. The sum rules with and without allowance for the Skyrme exchange interaction are discussed. The results of the calculations are compared with the experimental form factors of electron scattering by nuclei from 12 C to 48 Ca with excitation in them of normal-parity states with I/sup π/ = 0 + , 1 - , 2 + , 3 - , 4 + , 5 - and T = 0. The model-independent transition charge densities for the weakly collectivized excitations differ strongly from the model-dependent densities. The influence of neutrons on the transition charge densities of the nuclear isotopes 16 /sup ,/ 18 O, 32 /sup ,/ 34 S, and 40 /sup ,/ 48 Ca is considered

A molecular shift register based on electron transfer

Science.gov (United States)

Hopfield, J. J.; Onuchic, Josenelson; Beratan, David N.

1988-01-01

An electronic shift-register memory at the molecular level is described. The memory elements are based on a chain of electron-transfer molecules and the information is shifted by photoinduced electron-transfer reactions. This device integrates designed electronic molecules onto a very large scale integrated (silicon microelectronic) substrate, providing an example of a 'molecular electronic device' that could actually be made. The design requirements for such a device and possible synthetic strategies are discussed. Devices along these lines should have lower energy usage and enhanced storage density.

Preionization electron density measurement by collecting electric charge

International Nuclear Information System (INIS)

Giordano, G.; Letardi, T.

1988-01-01

A method using electron collection for preionization-electron number density measurements is presented. A cathode-potential drop model is used to describe the measurement principle. There is good agreement between the model and the experimental result

The Sensory Components of High-Capacity Iconic Memory and Visual Working Memory

OpenAIRE

Bradley, Claire; Pearson, Joel

2012-01-01

Early visual memory can be split into two primary components: a high-capacity, short-lived iconic memory followed by a limited-capacity visual working memory that can last many seconds. Whereas a large number of studies have investigated visual working memory for low-level sensory features, much research on iconic memory has used more “high-level” alphanumeric stimuli such as letters or numbers. These two forms of memory are typically examined separately, despite an intrinsic overlap in their...

The sensory components of high-capacity iconic memory and visual working memory

OpenAIRE

Claire eBradley; Claire eBradley; Joel ePearson

2012-01-01

Early visual memory can be split into two primary components: a high-capacity, short-lived iconic memory followed by a limited-capacity visual working memory that can last many seconds. Whereas a large number of studies have investigated visual working memory for low-level sensory features, much research on iconic memory has used more high-level alphanumeric stimuli such as letters or numbers. These two forms of memory are typically examined separately, despite an intrinsic overlap in their c...

Density-density functionals and effective potentials in many-body electronic structure calculations

International Nuclear Information System (INIS)

Reboredo, Fernando A.; Kent, Paul R.

2008-01-01

We demonstrate the existence of different density-density functionals designed to retain selected properties of the many-body ground state in a non-interacting solution starting from the standard density functional theory ground state. We focus on diffusion quantum Monte Carlo applications that require trial wave functions with optimal Fermion nodes. The theory is extensible and can be used to understand current practices in several electronic structure methods within a generalized density functional framework. The theory justifies and stimulates the search of optimal empirical density functionals and effective potentials for accurate calculations of the properties of real materials, but also cautions on the limits of their applicability. The concepts are tested and validated with a near-analytic model.

High Temperature Memories in SiC Technology

OpenAIRE

Ekström, Mattias

2014-01-01

This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. A memory must be able to function at 460 °C and after a total radiation dose of at least 200 Gy (SiC). This thesis is a literature survey. The thesis covers several Random-Access Memory (RAM) ...

Transistor memory devices with large memory windows, using multi-stacking of densely packed, hydrophobic charge trapping metal nanoparticle array

International Nuclear Information System (INIS)

Cho, Ikjun; Cho, Jinhan; Kim, Beom Joon; Cho, Jeong Ho; Ryu, Sook Won

2014-01-01

Organic field-effect transistor (OFET) memories have rapidly evolved from low-cost and flexible electronics with relatively low-memory capacities to memory devices that require high-capacity memory such as smart memory cards or solid-state hard drives. Here, we report the high-capacity OFET memories based on the multilayer stacking of densely packed hydrophobic metal NP layers in place of the traditional transistor memory systems based on a single charge trapping layer. We demonstrated that the memory performances of devices could be significantly enhanced by controlling the adsorption isotherm behavior, multilayer stacking structure and hydrophobicity of the metal NPs. For this study, tetraoctylammonium (TOA)-stabilized Au nanoparticles (TOA-Au NPs ) were consecutively layer-by-layer (LbL) assembled with an amine-functionalized poly(amidoamine) dendrimer (PAD). The formed (PAD/TOA-Au NP ) n films were used as a multilayer stacked charge trapping layer at the interface between the tunneling dielectric layer and the SiO 2 gate dielectric layer. For a single Au NP layer (i.e. PAD/TOA-Au NP ) 1 ) with a number density of 1.82 × 10 12 cm −2 , the memory window of the OFET memory device was measured to be approximately 97 V. The multilayer stacked OFET memory devices prepared with four Au NP layers exhibited excellent programmable memory properties (i.e. a large memory window (ΔV th ) exceeding 145 V, a fast switching speed (1 μs), a high program/erase (P/E) current ratio (greater than 10 6 ) and good electrical reliability) during writing and erasing over a relatively short time scale under an operation voltage of 100 V applied at the gate. (paper)

Applications of high order harmonic radiation to UVX-solids interaction: high excitation density in electronic relaxation dynamics and surface damaging

International Nuclear Information System (INIS)

De Grazia, M.

2007-12-01

The new sources of radiation in the extreme-UV (X-UV: 10-100 nm), which deliver spatially coherent, ultra-short and intense pulses, allow studying high flux processes and ultra-fast dynamics in various domains. The thesis work presents two applications of the high-order laser harmonics (HH) to solid state physics. In Part I, we describe the optimization of the harmonic for studies of X-UV/solids interaction. In Part II, we investigate effects of high excitation density in the dynamics of electron relaxation in dielectric scintillator crystals - tungstates and fluorides, using time-resolved luminescence spectroscopy. Quenching of luminescence at short time gives evidence of the competition between radiative and non-radiative recombination of self-trapped excitons (STE). The non-radiative channel is identified to mutual interaction of STE at high excitation density. In Part III, we study the X-UV induced damage mechanism in various materials, either conductor (amorphous carbon) or insulators (organic polymers, e.g., PMMA). In PMMA-Plexiglas, in the desorption regime (0.2 mJ/cm 2 , i.e., below damage threshold), the surface modifications reflect X-UV induced photochemical processes that are tentatively identified, as a function of dose: at low dose, polymer chain scission followed by the blow-up of the volatile, low-molecular fragments leads to crater formation; at high dose, cross-linking in the near-surface layer of remaining material leads to surface hardening. These promising results have great perspectives considering the performances already attained and planned in the next future in the development of the harmonic sources. (author)

Architectural Techniques to Enable Reliable and Scalable Memory Systems

OpenAIRE

Nair, Prashant J.

2017-01-01

High capacity and scalable memory systems play a vital role in enabling our desktops, smartphones, and pervasive technologies like Internet of Things (IoT). Unfortunately, memory systems are becoming increasingly prone to faults. This is because we rely on technology scaling to improve memory density, and at small feature sizes, memory cells tend to break easily. Today, memory reliability is seen as the key impediment towards using high-density devices, adopting new technologies, and even bui...

Shack-Hartmann Electron Densitometer (SHED): An Optical System for Diagnosing Free Electron Density in Laser-Produced Plasmas

Science.gov (United States)

2016-11-01

Free Electron Density in Laser-Produced Plasmas by Anthony R Valenzuela Approved for public release; distribution is...AND SUBTITLE Shack-Hartmann Electron Densitometer (SHED): An Optical System for Diagnosing Free Electron Density in Laser-Produced Plasmas 5a...SUPPLEMENTARY NOTES 14. ABSTRACT The Shack-Hartmann Electron Densitometer is a novel method to diagnose ultrashort pulse laser–produced plasmas

'Anomalous electron transport' with 'Giant Current Density' at room temperature observed with nanogranular materials

International Nuclear Information System (INIS)

Koops, Hans W.P.

2013-01-01

Focused electron beam induced deposition is a novel bottom up nano-structurization technology. An electron beam of high power density is used to generate nano- structures with dimensions > 20 nm, but being composed from amorphous or nanogranular materials with crystals of 2 to 5 nm diameter embedded in a Fullerene matrix. Those compounds are generated in general by secondary or low energy electrons in layers of inorganic, organic, organometallic compounds absorbed to the sample. Those are converted into nanogranular materials by the electron beam following chemical and physical laws, as given by 'Mother Nature'. Metals and amorphous mixtures of chemical compounds from metals are normal resistors, which can carry a current density J 2 . Nanogranular composites like Au/C or Pt/C with metal nanocrystals embedded in a Fullerene matrix have hopping conduction with 0-dimensional Eigen-value characteristics and show 'anomalous electron transport' and can carry 'Giant Current Densities' with values from > 1 MA/cm 2 to 0.1 GA/cm 2 without destruction of the materials. However the area connecting the nanogranular material with a metal with a 3-dimensional electron gas needs to be designed, that the flowing current is reduced to the current density values which the 3-D metal can support without segregation. The basis for a theoretical explanation of the phenomenon can be geometry quantization for Coulomb blockade, of electron surface orbitals around the nanocrystals, hopping conduction, and the limitation of the density of states for phonons in geometry confined non percolated granular materials with strong difference in mass and orientation. Several applications in electronics, signal generators, light sources, detectors, and solar energy harvesting are suggested. (author)

Energy-momentum density of graphite by electron-momentum spectroscopy

International Nuclear Information System (INIS)

Vos, M.; Fang, Z.; Canney, S.; Kheifets, A.; McCarthy, I.E.; Weigold, E.

1996-11-01

The energy-resolved electron momentum density of graphite has been measured along a series of well-defined directions using electron momentum spectroscopy (EMS). This is the first measurement of this kind performed on a single-crystal target with a thoroughly controlled orientation which clearly demonstrates the different nature of the σ and π bands in graphite. Good agreement between the calculated density and the measured one is found, further establishing that fact that EMS yields more direct and complete information on the valence electronic structure that any other method. 12 refs., 2 figs

Propagation of sound wave in high density deuterium at high temperatures

International Nuclear Information System (INIS)

Inoue, Kazuko; Ariyasu, Tomio

1986-01-01

The velocity and the attenuation constant of sound wave have been calculated for high density (10 24 ∼ 10 27 /cm 3 ) deuterium at high temperatures (10 -1 ∼ 10 4 eV). This calculation was made to understand the fuel properties in inertial confinement fusion and to obtain the basic data for pellet design. The isentropic sound wave which propagates in deuterium in plasma state at temperature T i = T e , is dealt with. The velocity is derived using the modulus of bulk elasticity of the whole system and the modulus of shear elasticity due to ion-ion interaction. For the calculation of attenuation constant, the bulk and shear viscosity due to ion-ion interaction, the shear viscosity of free electron gas, and the thermal conductivity due to free electrons are considered. The condition of frequency for the existence of such isentropic sound wave is discussed. The possibility of penetration into the fuel pellet in inertial confinement fusion is also discussed. The followings have been found: (1) The sound velocity is determined mainly from the bulk elasticity. The contribution of the shear elasticity is small. The velocity ranges from 2.8 x 10 6 to 1.5 x 10 8 cm/s in the above mentioned temperature and density regions. (2) The coefficient of attenuation constant with respect to ω 2 /2ρu 3 plotted versus temperature with the parameter of density shows a minimum. At temperatures below this minimum, the attenuation comes mainly from the bulk viscosity due to ion-ion interaction and the shear viscosity due to free electron gas. At temperatures above this minimum, the sound is attenuated mainly by the thermal conductivity due to electrons. (3) The condition for the existence of such adiabatic sound wave, is satisfied with the frequency less than 10 10 Hz. But, as for the pellet design, the wave length of sound with frequency less than 10 10 Hz is longer than the diameter of pellet when compressed highly. (author)

High Performance Shape Memory Polyurethane Synthesized with High Molecular Weight Polyol as the Soft Segment

Directory of Open Access Journals (Sweden)

Manzoor Ahmad

2012-05-01

Full Text Available Shape memory polyurethanes (SMPUs are typically synthesized using polyols of low molecular weight (MW~2,000 g/mol as it is believed that the high density of cross-links in these low molecular weight polyols are essential for high mechanical strength and good shape memory effect. In this study, polyethylene glycol (PEG-6000 with MW ~6000 g/mol as the soft segment and diisocyanate as the hard segment were used to synthesize SMPUs, and the results were compared with the SMPUs with polycaprolactone PCL-2000. The study revealed that although the PEG-6000-based SMPUs have lower maximum elongations at break (425% and recovery stresses than those of PCL-based SMPUs, they have much better recovery ratios (up to 98% and shape fixity (up to 95%, hence better shape memory effect. Furthermore, PEG-based SMPUs showed a much shorter actuation time of < 10 s for up to 90% shape recovery compared to typical actuation times of tens of seconds to a few minutes for common SMPUs, demonstrated their great potential for applications in microsystems and other engineering components.

Generation of Low-Energy High-Current Electron Beams in Plasma-Anode Electron Guns

Science.gov (United States)

Ozur, G. E.; Proskurovsky, D. I.

2018-01-01

This paper is a review of studies on the generation of low-energy high-current electron beams in electron guns with a plasma anode and an explosive-emission cathode. The problems related to the initiation of explosive electron emission under plasma and the formation and transport of high-current electron beams in plasma-filled systems are discussed consecutively. Considerable attention is given to the nonstationary effects that occur in the space charge layers of plasma. Emphasis is also placed on the problem of providing a uniform energy density distribution over the beam cross section, which is of critical importance in using electron beams of this type for surface treatment of materials. Examples of facilities based on low-energy high-current electron beam sources are presented and their applications in materials science and practice are discussed.

X-ray electron density distribution of GaAs

International Nuclear Information System (INIS)

Pietsch, U.

1986-01-01

Using ten X-ray structure amplitudes of strong reflections and nine weak reflections both, the valence electron and the difference electron density distribution of GaAs, are calculated. The experimental data are corrected for anomalous dispersion using a bond charge model. The calculated plots are compared with up to now published band structure-based and semiempirically calculated density plots. Taking into account the experimental data of germanium, measured on the same absolute scale, the difference density between GaAs and Ge is calculated. This exhibits the charge transfer between both the f.c.c.-sublattices as well as both, the shift and the decrease of the bond charge, quite closely connected to the theoretical results published by Baur et al. (author)

The study of dynamics of electrons in the presence of large current densities

International Nuclear Information System (INIS)

Garcia, G.

2007-11-01

The runaway electron effect is considered in different fields: nuclear fusion, or the heating of the solar corona. In this thesis, we are interested in runaway electrons in the ionosphere. We consider the issue of electrons moving through an ionospheric gas of positive ions and neutrals under the influence of a parallel electric field. We develop a kinetic model of collisions including electrons/electrons, electrons/ions and electrons/neutrals collisions. We use a Fokker-Planck approach to describe binary collisions between charged particles with a long-range interaction. A computational example is given illustrating the approach to equilibrium and the impact of the different terms. Then, a static electric field is applied in a new sample run. In this run, the electrons move in the z direction, parallel to the electric field. The first results show that all the electron distribution functions are non-Maxwellian. Furthermore, runaway electrons can carry a significant part of the total current density up to 20% of the total current density. Nevertheless, we note that the divergence free of the current density is not conserved. We introduce major changes in order to take into account the variation of the different moments of the ion distribution functions. We observe that the electron distribution functions are still non-Maxwellian. Runaway electrons are created and carry the current density. The core distribution stay at rest. As these electrons undergo less collisions, they increase the plasma conductivity. We make a parametric study. We fit the electron distribution function by two Maxwellian. We show that the time to reach the maximal current density is a key point. Thus, when we increase this time, we modify the temperatures. The current density plays a primary role. When the current density increases, all the moments of the distributions increase: electron density and mean velocity of the suprathermal distribution and the electron temperature of the core and

Molecular Electron Density Theory: A Modern View of Reactivity in Organic Chemistry

OpenAIRE

Luis R. Domingo

2016-01-01

A new theory for the study of the reactivity in Organic Chemistry, named Molecular Electron Density Theory (MEDT), is proposed herein. MEDT is based on the idea that while the electron density distribution at the ground state is responsible for physical and chemical molecular properties, as proposed by the Density Functional Theory (DFT), the capability for changes in electron density is responsible for molecular reactivity. Within MEDT, the reactivity in Organic Chemistry is studied through ...

The validity of the density scaling method in primary electron transport for photon and electron beams

International Nuclear Information System (INIS)

Woo, M.K.; Cunningham, J.R.

1990-01-01

In the convolution/superposition method of photon beam dose calculations, inhomogeneities are usually handled by using some form of scaling involving the relative electron densities of the inhomogeneities. In this paper the accuracy of density scaling as applied to primary electrons generated in photon interactions is examined. Monte Carlo calculations are compared with density scaling calculations for air and cork slab inhomogeneities. For individual primary photon kernels as well as for photon interactions restricted to a thin layer, the results can differ significantly, by up to 50%, between the two calculations. However, for realistic photon beams where interactions occur throughout the whole irradiated volume, the discrepancies are much less severe. The discrepancies for the kernel calculation are attributed to the scattering characteristics of the electrons and the consequent oversimplified modeling used in the density scaling method. A technique called the kernel integration technique is developed to analyze the general effects of air and cork inhomogeneities. It is shown that the discrepancies become significant only under rather extreme conditions, such as immediately beyond the surface after a large air gap. In electron beams all the primary electrons originate from the surface of the phantom and the errors caused by simple density scaling can be much more significant. Various aspects relating to the accuracy of density scaling for air and cork slab inhomogeneities are discussed

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

International Nuclear Information System (INIS)

Altamore, C; Tringali, C; Sparta', N; Marco, S Di; Grasso, A; Ravesi, S

2010-01-01

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10 5 ) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10 1 Hz to 10 6 Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl 2 /Ar chemistry. The relationship between the etch rate and the Cl 2 /Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl 2 /Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Characterization of the high density plasma etching process of CCTO thin films for the fabrication of very high density capacitors

Energy Technology Data Exchange (ETDEWEB)

Altamore, C; Tringali, C; Sparta' , N; Marco, S Di; Grasso, A; Ravesi, S [STMicroelectronics, Industial and Multi-segment Sector R and D, Catania (Italy)

2010-02-15

In this work the feasibility of CCTO (Calcium Copper Titanate) patterning by etching process is demonstrated and fully characterized in a hard to etch materials etcher. CCTO sintered in powder shows a giant relative dielectric constant (10{sup 5}) measured at 1 MHz at room temperature. This feature is furthermore coupled with stability from 10{sup 1} Hz to 10{sup 6} Hz in a wide temperature range (100K - 600K). In principle, this property can allow to fabricate very high capacitance density condenser. Due to its perovskite multi-component structure, CCTO can be considered a hard to etch material. For high density capacitor fabrication, CCTO anisotropic etching is requested by using high density plasma. The behavior of etched CCTO was studied in a HRe- (High Density Reflected electron) plasma etcher using Cl{sub 2}/Ar chemistry. The relationship between the etch rate and the Cl{sub 2}/Ar ratio was also studied. The effects of RF MHz, KHz Power and pressure variation, the impact of HBr addiction to the Cl{sub 2}/Ar chemistry on the CCTO etch rate and on its selectivity to Pt and photo resist was investigated.

Density-dependent electron scattering in photoexcited GaAs in strongly diffusive regime

DEFF Research Database (Denmark)

Mics, Zoltán; D’Angio, Andrea; Jensen, Søren A.

2013-01-01

In a series of systematic optical pump–terahertz probe experiments, we study the density-dependent electron scattering rate in photoexcited GaAs in the regime of strong carrier diffusion. The terahertz frequency-resolved transient sheet conductivity spectra are perfectly described by the Drude...... model, directly yielding the electron scattering rates. A diffusion model is applied to determine the spatial extent of the photoexcited electron-hole gas at each moment after photoexcitation, yielding the time-dependent electron density, and hence the density-dependent electron scattering time. We find...

3D Printing of Shape Memory Polymers for Flexible Electronic Devices.

Science.gov (United States)

Zarek, Matt; Layani, Michael; Cooperstein, Ido; Sachyani, Ela; Cohn, Daniel; Magdassi, Shlomo

2016-06-01

The formation of 3D objects composed of shape memory polymers for flexible electronics is described. Layer-by-layer photopolymerization of methacrylated semicrystalline molten macromonomers by a 3D digital light processing printer enables rapid fabrication of complex objects and imparts shape memory functionality for electrical circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electric field spikes formed by electron beam endash plasma interaction in plasma density gradients

International Nuclear Information System (INIS)

Gunell, H.; Loefgren, T.

1997-01-01

In the electron beam endash plasma interaction at an electric double layer the beam density is much higher than in the classical beam endash plasma experiments. The wave propagation takes place along the density gradient that is present at the high potential side of the double layer. Such a case is studied experimentally by injecting the electron beam from a plane cathode, without any grids suppressing the gradient, and by particle simulations. The high frequency field concentrates in a sharp open-quotes spikeclose quotes with a half width of the order of one wavelength. The spike is found to be a standing wave surrounded by regions dominated by propagating waves. It forms at a position where its frequency is close to the local plasma frequency. The spike forms also when the electric field is well below the threshold for modulational instability, and long before a density cavity is formed in the simulations. Particle simulations reveal that, at the spike, there is a backward traveling wave that, when it is strongly damped, accelerates electrons back towards the cathode. In a simulation of a homogeneous plasma without the density gradient no spike is seen, and the wave is purely travelling instead of standing. copyright 1997 American Institute of Physics

Using NVMe Gen3 PCIe SSD Cards in High-density Servers for High-performance Big Data Transfer Over Multiple Network Channels

Energy Technology Data Exchange (ETDEWEB)

Fang, Chin [SLAC National Accelerator Lab., Menlo Park, CA (United States)

2015-02-07

This Technical Note describes how the Zettar team came up with a data transfer cluster design that convincingly proved the feasibility of using high-density servers for high-performance Big Data transfers. It then outlines the tests, operations, and observations that address a potential over-heating concern regarding the use of Non-Volatile Memory Host Controller Interface Specification (NVMHCI aka NVM Express or NVMe) Gen 3 PCIe SSD cards in high-density servers. Finally, it points out the possibility of developing a new generation of high-performance Science DMZ data transfer system for the data-intensive research community and commercial enterprises.

Accuracy of the Hartree-Fock and local density approximations for electron densities: a study for light atoms

International Nuclear Information System (INIS)

Almbladh, C.-O.; Ekenberg, U.; Pedroza, A.C.

1983-01-01

The authors compare the electron densities and Hartree potentials in the local density and the Hartree-Fock approximations to the corresponding quantities obtained from more accurate correlated wavefunctions. The comparison is made for a number of two-electron atoms, Li, and for Be. The Hartree-Fock approximation is more accurate than the local density approximation within the 1s shell and for the spin polarization in Li, while the local density approximation is slightly better than the Hartree-Fock approximation for charge densities in the 2s shell. The inaccuracy of the Hartree-Fock and local density approximations to the Hartree potential is substantially smaller than the inaccuracy of the local density approximation to the ground-state exchange-correlation potential. (Auth.)

Scintillation and ionization yields produced by α-particles in high-density gaseous xenon

International Nuclear Information System (INIS)

Kusano, H.; Ishikawa, T.; Lopes, J.A.M.; Miyajima, M.; Shibamura, E.; Hasebe, N.

2012-01-01

The average numbers of scintillation photons and liberated electrons produced by 5.49-MeV α-particles were measured in high-density gaseous xenon. The density range is 0.12–1.32 g/cm 3 for scintillation measurements at zero electric field, and 0.12–1.03 g/cm 3 for the scintillation and ionization measurements under various electric fields. The density dependence of scintillation yield at zero electric field was observed. The W s -value, which is defined as the average energy expended per photon, increases with density and becomes almost constant in the density range above 1.0 g/cm 3 . Anti-correlations between average numbers of scintillation photons and liberated electrons were found to vary with density. It was also found that the total number of scintillation photons and liberated electrons decreases with increasing density. Several possible reasons for the variation in scintillation and ionization yields with density are discussed.

Electron momentum density measurements by means of positron annihilation and Compton spectroscopy

International Nuclear Information System (INIS)

Gerber, W.; Dlubek, G.; Marx, U.; Bruemmer, O.; Prautzsch, J.

1982-01-01

The electron momentum density is measured applying positron annihilation and Compton spectroscopy in order to get information about electron wave functions. Compton spectroscopic measurements of Pd-Ag and Cu-Zn alloy systems are carried out taking into account crystal structure, mixability, and order state. Three-dimensional momentum densities of silicon are determined in order to get better information about its electronic structure. The momentum density and the spin density of ferromagnetic nickel are investigated using angular correlation curves

Effects of Electron Flow Current Density on Flow Impedance of Magnetically Insulated Transmission Lines

International Nuclear Information System (INIS)

He Yong; Zou Wen-Kang; Song Sheng-Yi

2011-01-01

In modern pulsed power systems, magnetically insulated transmission lines (MITLs) are used to couple power between the driver and the load. The circuit parameters of MITLs are well understood by employing the concept of flow impedance derived from Maxwell's equations and pressure balance across the flow. However, the electron density in an MITL is always taken as constant in the application of flow impedance. Thus effects of electron flow current density (product of electron density and drift velocity) in an MITL are neglected. We calculate the flow impedances of an MITL and compare them under three classical MITL theories, in which the electron density profile and electron flow current density are different from each other. It is found that the assumption of constant electron density profile in the calculation of the flow impedance is not always valid. The electron density profile and the electron flow current density have significant effects on flow impedance of the MITL. The details of the electron flow current density and its effects on the operation impedance of the MITL should be addressed more explicitly by experiments and theories in the future. (nuclear physics)

Plasma density profiles and finite bandwidth effects on electron heating

International Nuclear Information System (INIS)

Spielman, R.B.; Mizuno, K.; DeGroot, J.S.; Bollen, W.M.; Woo, W.

1980-01-01

Intense, p-polarized microwaves are incident on an inhomogeneous plasma in a cylindrical waveguide. Microwaves are mainly absorbed by resonant absorption near the critical surface (where the plasma frequency, ω/sub pe/, equals the microwave frequency, ω/sub o/). The localized plasma waves strongly modify the plasma density. Step-plateau density profiles or a cavity are created depending on the plasma flow speed. Hot electron production is strongly affected by the microwave bandwidth. The hot electron temperature varies as T/sub H/ is proportional to (Δ ω/ω) -0 25 . As the hot electron temperature decreases with increasing driver bandwidth, the hot electron density increases. This increase is such that the heat flux into the overdense region (Q is proportional to eta/sub H/T/sub H/ 3 2 ) is nearly constant

Single-event phenomena on recent semiconductor devices. Charge-type multiple-bit upsets in high integrated memories

International Nuclear Information System (INIS)

Makihara, Akiko; Shindou, Hiroyuki; Nemoto, Norio; Kuboyama, Satoshi; Matsuda, Sumio; Ohshima, Takeshi; Hirao, Toshio; Itoh, Hisayoshi

2001-01-01

High integrated memories are used in solid state data recorder (SSDR) of the satellite for accumulating observation data. Single event upset phenomena which turn over an accumulated data in the memory cells are caused by heavy ion incidence. Studies on single-bit upset and multiple-bit upset phenomena in the high integrated memory cells are in progress recently. 16 Mbit DRAM (Dynamic Random Access Memories) and 64 Mbit DRAM are irradiated by heavy ion species, such as iodine, bromine and nickel, in comparison with the irradiation damage in the cosmic environment. Data written on the memory devices are read out after the irradiation. The memory cells in three kinds of states, all of charged state, all of discharged state, and an alternative state of charge and discharge, are irradiated for sorting out error modes caused by heavy ion incidence. The soft error in a single memory cells is known as a turn over from charged state to discharged state. Electrons in electron-hole pair generated by heavy ion incidence are captured in a diffusion region between capacitor electrodes of semiconductor. The charged states in the capacitor electrodes before the irradiation are neutralized and changed to the discharged states. According to high integration of the memories, many of the cells are affected by a single ion incidence. The multiple-bit upsets, however, are generated in the memory cells of discharged state before the irradiation, also. The charge-type multiple-bit upsets is considered as that error data are written on the DRAM during refresh cycle of a sense-up circuit and a pre-charge circuit which control the DRAM. (M. Suetake)

Anti-Ferroelectric Ceramics for High Energy Density Capacitors

Directory of Open Access Journals (Sweden)

Aditya Chauhan

2015-11-01

Full Text Available With an ever increasing dependence on electrical energy for powering modern equipment and electronics, research is focused on the development of efficient methods for the generation, storage and distribution of electrical power. In this regard, the development of suitable dielectric based solid-state capacitors will play a key role in revolutionizing modern day electronic and electrical devices. Among the popular dielectric materials, anti-ferroelectrics (AFE display evidence of being a strong contender for future ceramic capacitors. AFE materials possess low dielectric loss, low coercive field, low remnant polarization, high energy density, high material efficiency, and fast discharge rates; all of these characteristics makes AFE materials a lucrative research direction. However, despite the evident advantages, there have only been limited attempts to develop this area. This article attempts to provide a focus to this area by presenting a timely review on the topic, on the relevant scientific advancements that have been made with respect to utilization and development of anti-ferroelectric materials for electric energy storage applications. The article begins with a general introduction discussing the need for high energy density capacitors, the present solutions being used to address this problem, and a brief discussion of various advantages of anti-ferroelectric materials for high energy storage applications. This is followed by a general description of anti-ferroelectricity and important anti-ferroelectric materials. The remainder of the paper is divided into two subsections, the first of which presents various physical routes for enhancing the energy storage density while the latter section describes chemical routes for enhanced storage density. This is followed by conclusions and future prospects and challenges which need to be addressed in this particular field.

Molecular Electron Density Theory: A Modern View of Reactivity in Organic Chemistry.

Science.gov (United States)

Domingo, Luis R

2016-09-30

A new theory for the study of the reactivity in Organic Chemistry, named Molecular Electron Density Theory (MEDT), is proposed herein. MEDT is based on the idea that while the electron density distribution at the ground state is responsible for physical and chemical molecular properties, as proposed by the Density Functional Theory (DFT), the capability for changes in electron density is responsible for molecular reactivity. Within MEDT, the reactivity in Organic Chemistry is studied through a rigorous quantum chemical analysis of the changes of the electron density as well as the energies associated with these changes along the reaction path in order to understand experimental outcomes. Studies performed using MEDT allow establishing a modern rationalisation and to gain insight into molecular mechanisms and reactivity in Organic Chemistry.

Fast-electron self-collimation in a plasma density gradient

International Nuclear Information System (INIS)

Yang, X. H.; Borghesi, M.; Robinson, A. P. L.

2012-01-01

A theoretical and numerical study of fast electron transport in solid and compressed fast ignition relevant targets is presented. The principal aim of the study is to assess how localized increases in the target density (e.g., by engineering of the density profile) can enhance magnetic field generation and thus pinching of the fast electron beam through reducing the rate of temperature rise. The extent to which this might benefit fast ignition is discussed.

Electron-electron interactions in graphene field-induced quantum dots in a high magnetic field

DEFF Research Database (Denmark)

Orlof, A.; Shylau, Artsem; Zozoulenko, I. V.

2015-01-01

We study the effect of electron-electron interaction in graphene quantum dots defined by an external electrostatic potential and a high magnetic field. To account for the electron-electron interaction, we use the Thomas-Fermi approximation and find that electron screening causes the formation...... of compressible strips in the potential profile and the electron density. We numerically solve the Dirac equations describing the electron dynamics in quantum dots, and we demonstrate that compressible strips lead to the appearance of plateaus in the electron energies as a function of the magnetic field. Finally...

Investigations on the electronic, structural, magnetic properties related to shape-memory behavior in Ti2CoX (X=Al, Ga, In)

International Nuclear Information System (INIS)

Wei, Xiao-Ping; Chu, Yan-Dong; Sun, Xiao-Wei; E, Yan; Deng, Jian-Bo; Xing, Yong-Zhong

2015-01-01

Highlights: • The analysis of phase stability trend is studied for Ti 2 CoX(X = Al, Ga, In). • Ti 2 CoGa is more suitable as shape memory alloy. • Total magnetic moments disappear with a increase of c/a ratio for all systems. • Density of states at the Fermi level are also shown. - Abstract: Using the full-potential local orbital minimum-basis method, we have performed a systematic investigations on the electronic, structural, and magnetic properties related to shape memory applications for Ti 2 CoX (X=Al, Ga, In) alloys. Our results confirm that these alloys are half-metallic ferromagnets with total magnetic moment of 2μ B per formula unit in austenite phase, and undergo a martensitic transformation at low temperatures. The relative stabilities of the martensitic phases differ considerably between Ti 2 CoX (X=Al, Ga, In). Details of the electronic structures suggest that the differences in hybridizations between the magnetic components are responsible for trends of phase. Quantitative estimates for the energetics and the magnetizations indicate that Ti 2 CoGa is a promising candidate for shape memory applications

Al2O3 nanocrystals embedded in amorphous Lu2O3 high-k gate dielectric for floating gate memory application

International Nuclear Information System (INIS)

Yuan, C L; Chan, M Y; Lee, P S; Darmawan, P; Setiawan, Y

2007-01-01

The integration of nanoparticles has high potential in technological applications and opens up possibilities of the development of new devices. Compared to the conventional floating gate memory, a structure containing nanocrystals embedded in dielectrics shows high potential to produce a memory with high endurance, low operating voltage, fast write-erase speeds and better immunity to soft errors [S. Tiwari, F. Rana, H. Hanafi et al. 1996 Appl.Phys. Lett. 68, 1377]. A significant improvement on data retention [J. J. Lee, X. Wang et al. 2003 Proceedings of the VLSI Technol. Symposium, p33] can be observed when discrete nanodots are used instead of continuous floating gate as charge storage nodes because local defect related leakage can be reduced efficiently. Furthermore, using a high-k dielectric in place of the conventional SiO2 based dielectric, nanodots flash memory is able to achieve significantly improved programming efficiency and data retention [A. Thean and J. -P. Leburton, 2002 IEEE Potentials 21, 35; D. W. Kim, T. Kim and S. K. Banerjee, 2003 IEEE Trans. Electron Devices 50, 1823]. We have recently successfully developed a method to produce nanodots embedded in high-k gate dielectrics [C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Electrochemical and Solid-State Letters 9, F53; C. L. Yuan, P. Darmawan, Y. Setiawan and P. S. Lee, 2006 Europhys. Lett. 74, 177]. In this paper, we fabricated the memory structure of Al 2 O 3 nanocrystals embedded in amorphous Lu 2 O 3 high k dielectric using pulsed laser ablation. The mean size and density of the Al 2 O 3 nanocrystals are estimated to be about 5 nm and 7x1011 cm -2 , respectively. Good electrical performances in terms of large memory window and good data retention were observed. Our preparation method is simple, fast and economical

Local energy equation for two-electron atoms and relation between kinetic energy and electron densities

International Nuclear Information System (INIS)

March, N.H.

2002-08-01

In early work, Dawson and March [J. Chem. Phys. 81, 5850 (1984)] proposed a local energy method for treating both Hartree-Fock and correlated electron theory. Here, an exactly solvable model two-electron atom with pure harmonic interactions is treated in its ground state in the above context. A functional relation between the kinetic energy density t(r) at the origin r=0 and the electron density p(r) at the same point then emerges. The same approach is applied to the Hookean atom; in which the two electrons repel with Coulombic energy e 2 /r 12 , with r 12 the interelectronic separation, but are still harmonically confined. Again the kinetic energy density t(r) is the focal point, but now generalization away from r=0 is also effected. Finally, brief comments are added about He-like atomic ions in the limit of large atomic number. (author)

Modelling high density phenomena in hydrogen fibre Z-pinches

International Nuclear Information System (INIS)

Chittenden, J.P.

1990-09-01

The application of hydrogen fibre Z-pinches to the study of the radiative collapse phenomenon is studied computationally. Two areas of difficulty, the formation of a fully ionized pinch from a cryogenic fibre and the processes leading to collapse termination, are addressed in detail. A zero-D model based on the energy equation highlights the importance of particle end losses and changes in the Coulomb logarithm upon collapse initiation and termination. A 1-D Lagrangian resistive MHD code shows the importance of the changing radial profile shapes, particularly in delaying collapse termination. A 1-D, three fluid MHD code is developed to model the ionization of the fibre by thermal conduction from a high temperature surface corona to the cold core. Rate equations for collisional ionization, 3-body recombination and equilibration are solved in tandem with fluid equations for the electrons, ions and neutrals. Continuum lowering is found to assist ionization at the corona-core interface. The high density plasma phenomena responsible for radiative collapse termination are identified as the self-trapping of radiation and free electron degeneracy. A radiation transport model and computational analogues for the effects of degeneracy upon the equation of state, transport coefficients and opacity are implemented in the 1-D, single fluid model. As opacity increases the emergent spectrum is observed to become increasingly Planckian and a fall off in radiative cooling at small radii and low frequencies occurs giving rise to collapse termination. Electron degeneracy terminates radiative collapse by supplementing the radial pressure gradient until the electromagnetic pinch force is balanced. Collapse termination is found to be a hybrid process of opacity and degeneracy effects across a wide range of line densities with opacity dominant at large line densities but with electron degeneracy becoming increasingly important at lower line densities. (author)

The Effects of Presentation Method and Information Density on Visual Search Ability and Working Memory Load

Science.gov (United States)

Chang, Ting-Wen; Kinshuk; Chen, Nian-Shing; Yu, Pao-Ta

2012-01-01

This study investigates the effects of successive and simultaneous information presentation methods on learner's visual search ability and working memory load for different information densities. Since the processing of information in the brain depends on the capacity of visual short-term memory (VSTM), the limited information processing capacity…

Two color interferometric electron density measurement in an axially blown arc

Science.gov (United States)

Stoller, Patrick; Carstensen, Jan; Galletti, Bernardo; Doiron, Charles; Sokolov, Alexey; Salzmann, René; Simon, Sandor; Jabs, Philipp

2016-09-01

High voltage circuit breakers protect the power grid by interrupting the current in case of a short circuit. To do so an arc is ignited between two contacts as they separate; transonic gas flow is used to cool and ultimately extinguish the arc at a current-zero crossing of the alternating current. A detailed understanding of the arc interruption process is needed to improve circuit breaker design. The conductivity of the partially ionized gas remaining after the current-zero crossing, a key parameter in determining whether the arc will be interrupted or not, is a function of the electron density. The electron density, in turn, is a function of the detailed dynamics of the arc cooling process, which does not necessarily occur under local thermodynamic equilibrium (LTE) conditions. In this work, we measure the spatially resolved line-integrated index of refraction in a near-current-zero arc stabilized in an axial flow of synthetic air with two nanosecond pulsed lasers at wavelengths of 532 nm and 671 nm. Generating a stable, cylindrically symmetric arc enables us to determine the three-dimensional index of refraction distribution using Abel inversion. Due to the wavelength dependence of the component of the index of refraction related to the free electrons, the information at two different wavelengths can be used to determine the electron density. This information allows us to determine how important it is to take into account non-equilibrium effects for accurate modeling of the physics of decaying arcs.

Electron temperature and density relaxations during internal disruptions in TFR Tokamak plasmas

International Nuclear Information System (INIS)

Enriques, L.; Sand, F.

1977-01-01

Several diagnostics (soft X-ray, Thompson scattering, high frequency waves, and vacuum ultraviolet spectroscopy) have been used on TFR Tokamak plasmas in order to show that the soft X-ray relaxations are mainly due to electron temperature relaxations, with only small variations of the electron density. Values of ΔTsub(eo)/Tsub(eo) up to 17% and of Δnsub(eo)/nsub(eo) of a few % or less have been measured. (author)

Electron temperature and density relaxations during internal disruptions in TFR Tokamak plasmas

International Nuclear Information System (INIS)

1976-07-01

Several diagnostics (soft X-ray, Thomson scattering, high frequency waves, and vacuum ultraviolet spectroscopy) have been used on TFR Tokamak plasmas in order to show that the soft X-ray relaxations are mainly due to electron temperature relaxations, with only small variations of the electron density. Values of ΔTsub(e0)/Tsub(e0) up to 17% and of Δnsub(e0)/nsub(e0) of a few % or less have been measured

F + centre generation in MgO crystals at high density of excitation by accelerated electrons of subthreshold energy

Science.gov (United States)

Annenkov, Y. M.; Surzhikov, A. P.; Surzhikov, V. P.; Pogrebnjak, A. D.

1981-07-01

Optical absorption spectra and the angular distribution of annihilated positrons in MgO crystals irradiated by subtreshold superdense electron pulses are measured. The experimental results obtained show the effective contribution of the creation mechanism of non-impact radiation defects in MgO crystals at the highest electron irradiation densities.

Using bremsstrahlung for electron density estimation and correction in EAST tokamak

Energy Technology Data Exchange (ETDEWEB)

Chen, Yingjie, E-mail: bestfaye@gmail.com; Wu, Zhenwei; Gao, Wei; Jie, Yinxian; Zhang, Jizong; Huang, Juan; Zhang, Ling; Zhao, Junyu

2013-11-15

Highlights: • The visible bremsstrahlung diagnostic provides a simple and effective tool for electron density estimation in steady state discharges. • This method can make up some disadvantages of present FIR and TS diagnostics in EAST tokamak. • Line averaged electron density has been deduced from central VB signal. The results can also be used for FIR n{sub e} correction. • Typical n{sub e} profiles have been obtained with T{sub e} and reconstructed bremsstrahlung profiles. -- Abstract: In EAST electron density (n{sub e}) is measured by the multi-channel far-infrared (FIR) hydrogen cyanide (HCN) interferometer and Thomson scattering (TS) diagnostics. However, it is difficult to obtain accurate n{sub e} profile for that there are many problems existing in current electron density diagnostics. Since the visible bremsstrahlung (VB) emission coefficient has a strong dependence on electron density, the visible bremsstrahlung measurement system developed to determine the ion effective charge (Z{sub eff}) may also be used for n{sub e} estimation via inverse operations. With assumption that Z{sub eff} has a flat profile and does not change significantly in steady state discharges, line averaged electron density (n{sup ¯}{sub e}) has been deduced from VB signals in L-mode and H-mode discharges in EAST. The results are in good coincidence with n{sup ¯}{sub e} from FIR, which proves that VB measurement is an effective tool for n{sub e} estimation. VB diagnostic is also applied to n{sup ¯}{sub e} correction when FIR n{sup ¯}{sub e} is wrong for the laser phase shift reversal together with noise causes errors when electron density changed rapidly in the H-mode discharges. Typical n{sub e} profiles in L-mode and H-mode phase are also deduced with reconstructed bremsstrahlung profiles.

Direct measurement of electron density in microdischarge at atmospheric pressure by Stark broadening

International Nuclear Information System (INIS)

Dong Lifang; Ran Junxia; Mao Zhiguo

2005-01-01

We present a method and results for measurement of electron density in atmospheric-pressure dielectric barrier discharge. The electron density of microdischarge in atmospheric pressure argon is measured by using the spectral line profile method. The asymmetrical deconvolution is used to obtain Stark broadening. The results show that the electron density in single filamentary microdischarge at atmospheric pressure argon is 3.05x10 15 cm -3 if the electron temperature is 10,000 K. The result is in good agreement with the simulation. The electron density in dielectric barrier discharge increases with the increase of applied voltage

Molecular Electron Density Theory: A Modern View of Reactivity in Organic Chemistry

Directory of Open Access Journals (Sweden)

Luis R. Domingo

2016-09-01

Full Text Available A new theory for the study of the reactivity in Organic Chemistry, named Molecular Electron Density Theory (MEDT, is proposed herein. MEDT is based on the idea that while the electron density distribution at the ground state is responsible for physical and chemical molecular properties, as proposed by the Density Functional Theory (DFT, the capability for changes in electron density is responsible for molecular reactivity. Within MEDT, the reactivity in Organic Chemistry is studied through a rigorous quantum chemical analysis of the changes of the electron density as well as the energies associated with these changes along the reaction path in order to understand experimental outcomes. Studies performed using MEDT allow establishing a modern rationalisation and to gain insight into molecular mechanisms and reactivity in Organic Chemistry.

Electron density and temperature in NIO1 RF source operated in oxygen and argon

Science.gov (United States)

Barbisan, M.; Zaniol, B.; Cavenago, M.; Pasqualotto, R.; Serianni, G.; Zanini, M.

2017-08-01

The NIO1 experiment, built and operated at Consorzio RFX, hosts an RF negative ion source, from which it is possible to produce a beam of maximum 130 mA in H- ions, accelerated up to 60 kV. For the preliminary tests of the extraction system the source has been operated in oxygen, whose high electronegativity allows to reach useful levels of extracted beam current. The efficiency of negative ions extraction is strongly influenced by the electron density and temperature close to the Plasma Grid, i.e. the grid of the acceleration system which faces the source. To support the tests, these parameters have been measured by means of the Optical Emission Spectroscopy diagnostic. This technique has involved the use of an oxygen-argon mixture to produce the plasma in the source. The intensities of specific Ar I and Ar II lines have been measured along lines of sight close to the Plasma Grid, and have been interpreted with the ADAS package to get the desired information. This work will describe the diagnostic hardware, the analysis method and the measured values of electron density and temperature, as function of the main source parameters (RF power, pressure, bias voltage and magnetic filter field). The main results show that not only electron density but also electron temperature increase with RF power; both decrease with increasing magnetic filter field. Variations of source pressure and plasma grid bias voltage appear to affect only electron temperature and electron density, respectively.

Bayesian modeling of JET Li-BES for edge electron density profiles using Gaussian processes

Science.gov (United States)

Kwak, Sehyun; Svensson, Jakob; Brix, Mathias; Ghim, Young-Chul; JET Contributors Collaboration

2015-11-01

A Bayesian model for the JET lithium beam emission spectroscopy (Li-BES) system has been developed to infer edge electron density profiles. The 26 spatial channels measure emission profiles with ~15 ms temporal resolution and ~1 cm spatial resolution. The lithium I (2p-2s) line radiation in an emission spectrum is calculated using a multi-state model, which expresses collisions between the neutral lithium beam atoms and the plasma particles as a set of differential equations. The emission spectrum is described in the model including photon and electronic noise, spectral line shapes, interference filter curves, and relative calibrations. This spectral modeling gets rid of the need of separate background measurements for calculating the intensity of the line radiation. Gaussian processes are applied to model both emission spectrum and edge electron density profile, and the electron temperature to calculate all the rate coefficients is obtained from the JET high resolution Thomson scattering (HRTS) system. The posterior distributions of the edge electron density profile are explored via the numerical technique and the Markov chain Monte Carlo (MCMC) samplings. See the Appendix of F. Romanelli et al., Proceedings of the 25th IAEA Fusion Energy Conference 2014, Saint Petersburg, Russia.

Picture change error in quasirelativistic electron/spin density, Laplacian and bond critical points

KAUST Repository

Bučinský , Luká š; Kucková , Lenka; Malček, Michal; Koží šek, Jozef; Biskupič, Stanislav; Jayatilaka, Dylan; Bü chel, Gabriel E.; Arion, Vladimir B.

2014-01-01

The change of picture of the quasirelativistic Hartree-Fock wave functions is considered for electron/spin densities, the negative Laplacian of electron density and the appropriate bond critical point characteristics from the Quantum Theory of Atoms In Molecules (QTAIM). [OsCl5(Hpz)]- and [RuCl5(NO)]2- transition metal complexes are considered. Both, scalar relativistic and spin-orbit effects have been accounted for using the Infinite Order Two Component (IOTC) Hamiltonian. Picture change error (PCE) correction in the electron and spin densities and the Laplacian of electron density are treated analytically. Generally, PCE is found significant only in the core region of the atoms for the electron/spin density as well as Laplacian.©2014 Elsevier B.V. All rights reserved.

Picture change error in quasirelativistic electron/spin density, Laplacian and bond critical points

KAUST Repository

Bučinský, Lukáš

2014-06-01

The change of picture of the quasirelativistic Hartree-Fock wave functions is considered for electron/spin densities, the negative Laplacian of electron density and the appropriate bond critical point characteristics from the Quantum Theory of Atoms In Molecules (QTAIM). [OsCl5(Hpz)]- and [RuCl5(NO)]2- transition metal complexes are considered. Both, scalar relativistic and spin-orbit effects have been accounted for using the Infinite Order Two Component (IOTC) Hamiltonian. Picture change error (PCE) correction in the electron and spin densities and the Laplacian of electron density are treated analytically. Generally, PCE is found significant only in the core region of the atoms for the electron/spin density as well as Laplacian.©2014 Elsevier B.V. All rights reserved.

Edge density profiles in high-performance JET plasmas

International Nuclear Information System (INIS)

Summers, D.D.R.; Viaccoz, B.; Vince, J.

1997-01-01

Detailed electron density profiles of the scrape-off layer in high-performance JET plasmas (plasma current, I p nbi ∝17 MW) have been measured by means of a lithium beam diagnostic system featuring high spatial resolution [Kadota (1978)[. Measurements were taken over a period of several seconds, allowing examination of the evolution of the edge profile at a location upstream from the divertor target. The data clearly show the effects of the H-mode transition - an increase in density near the plasma separatrix and a reduction in density scrape-off length. The profiles obtained under various plasma conditions are compared firstly with data from other diagnostics, located elsewhere in the vessel, and also with the predictions of an 'onion-skin' model (DIVIMP), which used, as initial parameters, data from an array of probes located in the divertor target. (orig.)

Reinforcement of natural rubber/high density polyethylene blends with electron beam irradiated liquid natural rubber-coated rice husk

Energy Technology Data Exchange (ETDEWEB)

Chong, E.L.; Ahmad, Ishak [Polymer Research Center (PORCE), School of Chemical Science and Food Technology, Universiti Kebangsaan Malaysia 4, 43600 UKM Bangi, Selangor Darul Ehsan (Malaysia); Dahlan, H.M. [Radiation Processing Technology Division, Malaysian Nuclear Agency (Nuclear Malaysia), Bangi, 43000 Kajang, Selangor Darul Ehsan (Malaysia); Abdullah, Ibrahim, E-mail: dia@ukm.m [Polymer Research Center (PORCE), School of Chemical Science and Food Technology, Universiti Kebangsaan Malaysia 4, 43600 UKM Bangi, Selangor Darul Ehsan (Malaysia)

2010-08-15

Coating of rice husk (RH) surface with liquid natural rubber (LNR) and exposure to electron beam irradiation in air were studied. FTIR analysis on the LNR-coated RH (RHR) exposed to electron beam (EB) showed a decrease in the double bonds and an increase in hydroxyl and hydrogen bonded carbonyl groups arising from the chemical interaction between the active groups on RH surface with LNR. The scanning electron micrograph showed that the LNR formed a coating on the RH particles which transformed to a fine and clear fibrous layer at 20 kGy irradiation. The LNR film appeared as patches at 50 kGy irradiation due to degradation of rubber. Composites of natural rubber (NR)/high density polyethylene (HDPE)/RHR showed an optimum at 20-30 kGy dosage with the maximum stress, tensile modulus and impact strength of 6.5, 79 and 13.2 kJ/m{sup 2}, respectively. The interfacial interaction between the modified RH and TPNR matrix had improved on exposure of RHR to e-beam at 20-30 kGy dosage.

Exploring the temporally resolved electron density evolution in extreme ultra-violet induced plasmas

International Nuclear Information System (INIS)

Van der Horst, R M; Beckers, J; Nijdam, S; Kroesen, G M W

2014-01-01

We measured the electron density in an extreme ultra-violet (EUV) induced plasma. This is achieved in a low-pressure argon plasma by using a method called microwave cavity resonance spectroscopy. The measured electron density just after the EUV pulse is 2.6 × 10 16  m −3 . This is in good agreement with a theoretical prediction from photo-ionization, which yields a density of 4.5 × 10 16  m −3 . After the EUV pulse the density slightly increases due to electron impact ionization. The plasma (i.e. electron density) decays in tens of microseconds. (fast track communication)

Electron density measurement for steady state plasmas

International Nuclear Information System (INIS)

Kawano, Yasunori; Chiba, Shinichi; Inoue, Akira

2000-01-01

Electron density of a large tokamak has been measured successfully by the tangential CO 2 laser polarimeter developed in JT-60U. The tangential Faraday rotation angles of two different wavelength of 9.27 and 10.6 μm provided the electron density independently. Two-color polarimeter concept for elimination of Faraday rotation at vacuum windows is verified for the first time. A system stability for long time operation up to ∼10 hours is confirmed. A fluctuation of a signal baseline is observed with a period of ∼3 hours and an amplitude of 0.4 - 0.7deg. In order to improve the polarimeter, an application of diamond window for reduction of the Faraday rotation at vacuum windows and another two-color polarimeter concept for elimination of mechanical rotation component are proposed. (author)

Automated Processing of ISIS Topside Ionograms into Electron Density Profiles

Science.gov (United States)

Reinisch, bodo W.; Huang, Xueqin; Bilitza, Dieter; Hills, H. Kent

2004-01-01

Modeling of the topside ionosphere has for the most part relied on just a few years of data from topside sounder satellites. The widely used Bent et al. (1972) model, for example, is based on only 50,000 Alouette 1 profiles. The International Reference Ionosphere (IRI) (Bilitza, 1990, 2001) uses an analytical description of the graphs and tables provided by Bent et al. (1972). The Alouette 1, 2 and ISIS 1, 2 topside sounder satellites of the sixties and seventies were ahead of their times in terms of the sheer volume of data obtained and in terms of the computer and software requirements for data analysis. As a result, only a small percentage of the collected topside ionograms was converted into electron density profiles. Recently, a NASA-funded data restoration project has undertaken and is continuing the process of digitizing the Alouette/ISIS ionograms from the analog 7-track tapes. Our project involves the automated processing of these digital ionograms into electron density profiles. The project accomplished a set of important goals that will have a major impact on understanding and modeling of the topside ionosphere: (1) The TOPside Ionogram Scaling and True height inversion (TOPIST) software was developed for the automated scaling and inversion of topside ionograms. (2) The TOPIST software was applied to the over 300,000 ISIS-2 topside ionograms that had been digitized in the fkamework of a separate AISRP project (PI: R.F. Benson). (3) The new TOPIST-produced database of global electron density profiles for the topside ionosphere were made publicly available through NASA s National Space Science Data Center (NSSDC) ftp archive at . (4) Earlier Alouette 1,2 and ISIS 1, 2 data sets of electron density profiles from manual scaling of selected sets of ionograms were converted fiom a highly-compressed binary format into a user-friendly ASCII format and made publicly available through nssdcftp.gsfc.nasa.gov. The new database for the topside ionosphere established

Polyquant CT: direct electron and mass density reconstruction from a single polyenergetic source

Science.gov (United States)

Mason, Jonathan H.; Perelli, Alessandro; Nailon, William H.; Davies, Mike E.

2017-11-01

Quantifying material mass and electron density from computed tomography (CT) reconstructions can be highly valuable in certain medical practices, such as radiation therapy planning. However, uniquely parameterising the x-ray attenuation in terms of mass or electron density is an ill-posed problem when a single polyenergetic source is used with a spectrally indiscriminate detector. Existing approaches to single source polyenergetic modelling often impose consistency with a physical model, such as water-bone or photoelectric-Compton decompositions, which will either require detailed prior segmentation or restrictive energy dependencies, and may require further calibration to the quantity of interest. In this work, we introduce a data centric approach to fitting the attenuation with piecewise-linear functions directly to mass or electron density, and present a segmentation-free statistical reconstruction algorithm for exploiting it, with the same order of complexity as other iterative methods. We show how this allows both higher accuracy in attenuation modelling, and demonstrate its superior quantitative imaging, with numerical chest and metal implant data, and validate it with real cone-beam CT measurements.

Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide

International Nuclear Information System (INIS)

Lee, Gae Hun; Lee, Jung Min; Yang, Hyung Jun; Song, Yun Heub; Bea, Ji Cheol; Tanaka, Testsu

2012-01-01

The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al 2 O 3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al 2 O 3 ) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10 -10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al 2 O 3 ) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.

Positivity of the spherically averaged atomic one-electron density

DEFF Research Database (Denmark)

Fournais, Søren; Hoffmann-Ostenhof, Maria; Hoffmann-Ostenhof, Thomas

2008-01-01

We investigate the positivity of the spherically averaged atomic one-electron density . For a which stems from a physical ground state we prove that for r ≥  0. This article may be reproduced in its entirety for non-commercial purposes.......We investigate the positivity of the spherically averaged atomic one-electron density . For a which stems from a physical ground state we prove that for r ≥  0. This article may be reproduced in its entirety for non-commercial purposes....

Bremsstrahlung spectra for Al, Cs, and Au atoms in high-temperature, high-density plasmas

International Nuclear Information System (INIS)

Kim, L.; Pratt, R.H.; Tseng, H.K.

1985-01-01

Results are presented from a numerical calculation for the bremsstrahlung spectrum and Gaunt factors of Al, Cs, and Au atoms in high-temperature (-T), high-density (-rho) plasmas. Plasma temperatures kT = 0.1 and 1.0 keV and plasma densities rho = rho 0 (the normal solid density) and rho = 100rho 0 are considered. This allows us to determine the generality and identify the origins of features which we had previously identified in calculations for Cs. We also now present results for the total energy loss of an electron in such a plasma. We use a relativistic multipole code which treats the bremsstrahlung process as a single-electron transition in a static screened central potential. We take for the static potential corresponding to an atom in a hot dense plasma the finite-temperature, finite-density Thomas-Fermi model. This approach corresponds to an average atom in local thermodynamic equilibrium. In comparison to isolated-neutral-atom results we observe general suppression of cross sections and a particular suppression in the tip region of the spectrum. Within this model, both superscreening and shape resonances are found in the circumstances of extreme density. At more normal densities and except for the soft-photon end, the spectrum at these energies for an atom in a hot plasma (characterized by an average degree of ionization) can be well represented by the spectrum of the corresponding isolated ion, which has a similar potential shape at the distances which characterize the process

High density plasmas formation in Inertial Confinement Fusion and Astrophysics

International Nuclear Information System (INIS)

Martinez-Val, J. M.; Minguez, E.; Velarde, P.; Perlado, J. M.; Velarde, G.; Bravo, E.; Eliezer, S.; Florido, R.; Garcia Rubiano, J.; Garcia-Senz, D.; Gil de la Fe, J. M.; Leon, P. T.; Martel, P.; Ogando, F.; Piera, M.; Relano, A.; Rodriguez, R.; Garcia, C.; Gonzalez, E.; Lachaise, M.; Oliva, E.

2005-01-01

In inertially confined fusion (ICF), high densities are required to obtain high gains. In Fast Ignition, a high density, low temperature plasma can be obtained during the compression. If the final temperature reached is low enough, the electrons of the plasma can be degenerate. In degenerate plasmas. Bremsstrahlung emission is strongly suppressed an ignition temperature becomes lower than in classical plasmas, which offers a new design window for ICF. The main difficulty of degenerate plasmas in the compression energy needed for high densities. Besides that, the low specific heat of degenerate electrons (as compared to classical values) is also a problem because of the rapid heating of the plasma. Fluid dynamic evolution of supernovae remnants is a very interesting problem in order to predict the thermodynamical conditions achieved in their collision regions. Those conditions have a strong influence in the emission of light and therefore the detection of such events. A laboratory scale system has been designed reproducing the fluid dynamic field in high energy experiments. The evolution of the laboratory system has been calculated with ARWEN code, 2D Radiation CFD that works with Adaptive Mesh Refinement. Results are compared with simulations on the original system obtained with a 3D SPH astrophysical code. New phenomena at the collision plane and scaling of the laboratory magnitudes will be described. Atomic physics for high density plasmas has been studied with participation in experiments to obtain laser produced high density plasmas under NLTE conditions, carried out at LULI. A code, ATOM3R, has been developed which solves rate equations for optically thin plasmas as well as for homogeneous optically thick plasmas making use of escape factors. New improvements in ATOM3R are been done to calculate level populations and opacities for non homogeneous thick plasmas in NLTE, with emphasis in He and H lines for high density plasma diagnosis. Analytical expression

Magnetic vortex racetrack memory

Science.gov (United States)

Geng, Liwei D.; Jin, Yongmei M.

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications.

The sensory components of high-capacity iconic memory and visual working memory.

Science.gov (United States)

Bradley, Claire; Pearson, Joel

2012-01-01

EARLY VISUAL MEMORY CAN BE SPLIT INTO TWO PRIMARY COMPONENTS: a high-capacity, short-lived iconic memory followed by a limited-capacity visual working memory that can last many seconds. Whereas a large number of studies have investigated visual working memory for low-level sensory features, much research on iconic memory has used more "high-level" alphanumeric stimuli such as letters or numbers. These two forms of memory are typically examined separately, despite an intrinsic overlap in their characteristics. Here, we used a purely sensory paradigm to examine visual short-term memory for 10 homogeneous items of three different visual features (color, orientation and motion) across a range of durations from 0 to 6 s. We found that the amount of information stored in iconic memory is smaller for motion than for color or orientation. Performance declined exponentially with longer storage durations and reached chance levels after ∼2 s. Further experiments showed that performance for the 10 items at 1 s was contingent on unperturbed attentional resources. In addition, for orientation stimuli, performance was contingent on the location of stimuli in the visual field, especially for short cue delays. Overall, our results suggest a smooth transition between an automatic, high-capacity, feature-specific sensory-iconic memory, and an effortful "lower-capacity" visual working memory.

The sensory components of high-capacity iconic memory and visual working memory

Directory of Open Access Journals (Sweden)

Claire eBradley

2012-09-01

Full Text Available Early visual memory can be split into two primary components: a high-capacity, short-lived iconic memory followed by a limited-capacity visual working memory that can last many seconds. Whereas a large number of studies have investigated visual working memory for low-level sensory features, much research on iconic memory has used more high-level alphanumeric stimuli such as letters or numbers. These two forms of memory are typically examined separately, despite an intrinsic overlap in their characteristics. Here, we used a purely sensory paradigm to examine visual short-term memory for 10 homogeneous items of 3 different visual features (colour, orientation and motion across a range of durations from 0 to 6 seconds. We found that the amount of information stored in iconic memory is smaller for motion than for colour or orientation. Performance declined exponentially with longer storage durations and reached chance levels after ~2 seconds. Further experiments showed that performance for the 10 items at 1 second was contingent on unperturbed attentional resources. In addition, for orientation stimuli, performance was contingent on the location of stimuli in the visual field, especially for short cue delays. Overall, our results suggest a smooth transition between an automatic, high-capacity, feature-specific sensory-iconic memory and an effortful ‘lower-capacity’ visual working memory.

Thomson scattering from near-solid density plasmas using soft x-ray free electron lasers

Energy Technology Data Exchange (ETDEWEB)

Holl, A; Bornath, T; Cao, L; Doppner, T; Dusterer, S; Forster, E; Fortmann, C; Glenzer, S H; Gregori, G; Laarmann, T; Meiwes-Broer, K H; Przystawik, A; Radcliffe, P; Redmer, R; Reinholz, H; Ropke, G; Thiele, R; Tiggesbaumker, J; Toleikis, S; Truong, N X; Tschentscher, T; Uschmann, I; Zastrau, U

2006-11-21

We propose a collective Thomson scattering experiment at the VUV free electron laser facility at DESY (FLASH) which aims to diagnose warm dense matter at near-solid density. The plasma region of interest marks the transition from an ideal plasma to a correlated and degenerate many-particle system and is of current interest, e.g. in ICF experiments or laboratory astrophysics. Plasma diagnostic of such plasmas is a longstanding issue. The collective electron plasma mode (plasmon) is revealed in a pump-probe scattering experiment using the high-brilliant radiation to probe the plasma. The distinctive scattering features allow to infer basic plasma properties. For plasmas in thermal equilibrium the electron density and temperature is determined from scattering off the plasmon mode.

Impact of electron-electron Coulomb interaction on the high harmonic generation process in graphene

Science.gov (United States)

Avetissian, H. K.; Mkrtchian, G. F.

2018-03-01

Generation of high harmonics in a monolayer graphene initiated by a strong coherent radiation field, taking into account electron-electron Coulomb interaction, is investigated. A microscopic theory describing the nonlinear optical response of graphene is developed. The Coulomb interaction of electrons is treated in the scope of dynamic Hartree-Fock approximation. The closed set of integrodifferential equations for the single-particle density matrix of a graphene quantum structure is solved numerically. The obtained solutions show the significance of many-body Coulomb interaction on the high harmonic generation process in graphene.

Extreme states of matter high energy density physics

CERN Document Server

Fortov, Vladimir E

2016-01-01

With its many beautiful colour pictures, this book gives fascinating insights into the unusual forms and behaviour of matter under extremely high pressures and temperatures. These extreme states are generated, among other things, by strong shock, detonation and electric explosion waves, dense laser beams,electron and ion beams, hypersonic entry of spacecraft into dense atmospheres of planets, and in many other situations characterized by extremely high pressures and temperatures.Written by one of the world's foremost experts on the topic, this book will inform and fascinate all scientists dealing with materials properties and physics, and also serve as an excellent introduction to plasma-, shock-wave and high-energy-density physics for students and newcomers seeking an overview. This second edition is thoroughly revised and expanded, in particular with new material on high energy-density physics, nuclear explosions and other nuclear transformation processes.

Polar observations of electron density distribution in the Earth’s magnetosphere. 2. Density profiles

Directory of Open Access Journals (Sweden)

H. Laakso

2002-11-01

Full Text Available Using spacecraft potential measurements of the Polar electric field experiment, we investigate electron density variations of key plasma regions within the magnetosphere, including the polar cap, cusp, trough, plasmapause, and auroral zone. The statistical results were presented in the first part of this study, and the present paper reports detailed structures revealed by individual satellite passes. The high-altitude (> 3 RE polar cap is generally one of the most tenuous regions in the magnetosphere, but surprisingly, the polar cap boundary does not appear as a steep density decline. At low altitudes (1 RE in summer, the polar densities are very high, several 100 cm-3 , and interestingly, the density peaks at the central polar cap. On the noonside of the polar cap, the cusp appears as a dense, 1–3° wide region. A typical cusp density above 4 RE distance is between several 10 cm-3 and a few 100 cm-3 . On some occasions the cusp is crossed multiple times in a single pass, simultaneously with the occurrence of IMF excursions, as the cusp can instantly shift its position under varying solar wind conditions, similar to the magnetopause. On the nightside, the auroral zone is not always detected as a simple density cavity. Cavities are observed but their locations, strengths, and sizes vary. Also, the electric field perturbations do not necessarily overlap with the cavities: there are cavities with no field disturbances, as well as electric field disturbances observed with no clear cavitation. In the inner magnetosphere, the density distributions clearly show that the plasmapause and trough densities are well correlated with geomagnetic activity. Data from individual orbits near noon and midnight demonstrate that at the beginning of geomagnetic disturbances, the retreat speed of the plasmapause can be one L-shell per hour, while during quiet intervals the plasmapause can expand anti-earthward at the same speed. For the trough region, it is found

Collimated fast electron beam generation in critical density plasma

Energy Technology Data Exchange (ETDEWEB)

Iwawaki, T., E-mail: iwawaki-t@eie.eng.osaka-u.ac.jp; Habara, H.; Morita, K.; Tanaka, K. A. [Graduate School of Engineering, Osaka University, 2-1, Yamada-oka, Suita, Osaka 565-0871 (Japan); Baton, S.; Fuchs, J.; Chen, S. [LULI, CNRS-Ecole Polytechnique-Université Pierre et Marie Curie-CEA, 91128 Palaiseau (France); Nakatsutsumi, M. [LULI, CNRS-Ecole Polytechnique-Université Pierre et Marie Curie-CEA, 91128 Palaiseau (France); European X-Ray Free-Electron Laser Facility (XFEL) GmbH (Germany); Rousseaux, C. [CEA, DAM, DIF, F-91297 Arpajon (France); Filippi, F. [La SAPIENZA, University of Rome, Dip. SBAI, 00161 Rome (Italy); Nazarov, W. [School of Chemistry, University of St. Andrews, North Haugh, St. Andrews, Fife KY16 9ST, Scotland (United Kingdom)

2014-11-15

Significantly collimated fast electron beam with a divergence angle 10° (FWHM) is observed when an ultra-intense laser pulse (I = 10{sup 14 }W/cm{sup 2}, 300 fs) irradiates a uniform critical density plasma. The uniform plasma is created through the ionization of an ultra-low density (5 mg/c.c.) plastic foam by X-ray burst from the interaction of intense laser (I = 10{sup 14 }W/cm{sup 2}, 600 ps) with a thin Cu foil. 2D Particle-In-Cell (PIC) simulation well reproduces the collimated electron beam with a strong magnetic field in the region of the laser pulse propagation. To understand the physical mechanism of the collimation, we calculate energetic electron motion in the magnetic field obtained from the 2D PIC simulation. As the results, the strong magnetic field (300 MG) collimates electrons with energy over a few MeV. This collimation mechanism may attract attention in many applications such as electron acceleration, electron microscope and fast ignition of laser fusion.

The electronic density of states of disordered compounds

International Nuclear Information System (INIS)

Geertsma, W.; Dijkstra, J.

1984-11-01

Recently, the electronic properties of liquid alkali (Li, Na, K, Rb, Cs)-group IV (Si, Ge, Sn, Pb) alloys have been discussed by the present authors using a tight-binding model. Only anion orbitals (= group IV) are taken into account. Disorder is described by a pseudo lattice, which takes into account local coordination in one of the sublattices (cation or anion) only. In the first part of this paper it is shown that this approximation is consistent with the usual valence rules used by structural chemists for crystalline structures. In the second part of the paper the solutions for the density of states of the tight-binding Hamiltonian are studied for a number of pseudolattices. The infinite set of Green function equations is solved by using the effective transfer method, which replaces the famous Block condition. It is shown that such a model can explain the formation of bandgaps in disordered systems. By choosing the proper smallest cluster(s) of transfer loops to model the real structure by a pseudolattice, a density of states is obtained which represents properly that of the corresponding crystalline structure. Structures reminiscent to those caused by van Hove singularities already appear in the electronic density of states when relatively small cluster(s) of transfer loops are used. The approach outlined in this paper is capable of describing the electronic density of states due to various degrees of local order in a sublattice. Some of the peculiarities occurring in the solution of the density of states of certain pseudolattices, such as poles outside the band, are discussed in an appendix. (author)

SOLAR NEUTRINO PHYSICS OSCILLATIONS: SENSITIVITY TO THE ELECTRONIC DENSITY IN THE SUN'S CORE

Energy Technology Data Exchange (ETDEWEB)

Lopes, Ilidio [Centro Multidisciplinar de Astrofisica, Instituto Superior Tecnico, Universidade Tecnica de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa (Portugal); Turck-Chieze, Sylvaine, E-mail: ilidio.lopes@ist.utl.pt, E-mail: ilopes@uevora.pt, E-mail: sylvaine.turck-chieze@cea.fr [CEA/IRFU/Service d' Astrophysique, CE Saclay, F-91191 Gif sur Yvette (France)

2013-03-01

Solar neutrinos coming from different nuclear reactions are now detected with high statistics. Consequently, an accurate spectroscopic analysis of the neutrino fluxes arriving on Earth's detectors becomes available, in the context of neutrino oscillations. In this work, we explore the possibility of using this information to infer the radial profile of the electronic density in the solar core. So, we discuss the constraints on the Sun's density and chemical composition that can be determined from solar neutrino observations. This approach constitutes an independent and alternative diagnostic to the helioseismic investigations already done. The direct inversion method, which we propose to obtain the radial solar electronic density profile, is almost independent of the solar model.

Numerical Studies of Electron Acceleration Behind Self-Modulating Proton Beam in Plasma with a Density Gradient

CERN Document Server

Petrenko, A.; Sosedkin, A.

2016-01-01

Presently available high-energy proton beams in circular accelerators carry enough momentum to accelerate high-intensity electron and positron beams to the TeV energy scale over several hundred meters of the plasma with a density of about 1e15 1/cm^3. However, the plasma wavelength at this density is 100-1000 times shorter than the typical longitudinal size of the high-energy proton beam. Therefore the self-modulation instability (SMI) of a long (~10 cm) proton beam in the plasma should be used to create the train of micro-bunches which would then drive the plasma wake resonantly. Changing the plasma density profile offers a simple way to control the development of the SMI and the acceleration of particles during this process. We present simulations of the possible use of a plasma density gradient as a way to control the acceleration of the electron beam during the development of the SMI of a 400 GeV proton beam in a 10 m long plasma. This work is done in the context of the AWAKE project --- the proof-of-prin...

Mechanisms of the electron density depletion in the SAR arc region

Directory of Open Access Journals (Sweden)

A. V. Pavlov

1996-02-01

Full Text Available This study compares the measurements of electron density and temperature and the integral airglow intensity at 630 nm in the SAR arc region and slightly south of this (obtained by the Isis 2 spacecraft during the 18 December 1971 magnetic storm, with the model results obtained using the time dependent one-dimensional mathematical model of the Earth\\'s ionosphere and plasmasphere. The explicit expression in the third Enskog approximation for the electron thermal conductivity coefficient in the multicomponent mixture of ionized gases and a simplified calculation method for this coefficient presents an opportunity to calculate more exactly the electron temperature and density and 630 nm emission within SAR arc region are used in the model. Collisions between N2 and hot thermal electrons in the SAR arc region produce vibrationally excited nitrogen molecules. It appears that the loss rate of O+(4S due to reactions with the vibrationally excited nitrogen is enough to explain electron density depression by a factor of two at F-region heights and the topside ionosphere density variations within the SAR arc if the erosion of plasma within geomagnetic field tubes, during the main phase of the geomagnetic storm and subsequent filling of geomagnetic tubes during the recovery phase, are considered. To explain the disagreement by a factor 1.5 between the observed and modeled SAR arc electron densities an additional plasma drift velocity ~–30 m s–1 in the ion continuity equations is needed during the recovery phase. This additional plasma drift velocity is likely caused by the transition from convecting to corotating flux tubes on the equatorward wall of the trough. The electron densities and temperatures and 630 nm integral intensity at the SAR arc and slightly south of this region as measured for the 18 December 1971 magnetic storm were correctly described by the model without perpendicular electric fields. Within this model framework the effect of the

New Data on the Topside Electron Density Distribution

Science.gov (United States)

Huang, Xue-Qin; Reinisch, Bodo; Bilitza, Dieter; Benson, Robert F.

2001-01-01

The existing uncertainties about the electron density profiles in the topside ionosphere, i.e., in the height region from hmF2 to approx. 2000 km, require the search for new data sources. The ISIS and Alouette topside sounder satellites from the sixties to the eighties recorded millions of ionograms and most were not analyzed in terms of electron density profiles. In recent years an effort started to digitize the analog recordings to prepare the ionograms for computerized analysis. As of November 2001 about 350,000 ionograms have been digitized from the original 7-track analog tapes. These data are available in binary and CDF format from the anonymous ftp site of the National Space Science Data Center. A search site and browse capabilities on CDAWeb assist the scientific usage of these data. All information and access links can be found at http://nssdc.gsfc.nasa.gov/space/isis/isis-status.html. This paper describes the ISIS data restoration effort and shows how the digital ionograms are automatically processed into electron density profiles from satellite orbit altitude (1400 km for ISIS-2) down to the F peak. Because of the large volume of data an automated processing algorithm is imperative. The automatic topside ionogram scaler with true height algorithm TOPIST software developed for this task is successfully scaling approx.70 % of the ionograms. An 'editing process' is available to manually scale the more difficult ionograms. The automated processing of the digitized ISIS ionograms is now underway, producing a much-needed database of topside electron density profiles for ionospheric modeling covering more than one solar cycle. The ISIS data restoration efforts are supported through NASA's Applied Systems and Information Research Program.

Electric field and electron density thresholds for coherent auroral echo onset

International Nuclear Information System (INIS)

Kustov, A.V.; Uspensky, M.V.; Sofko, G.J.; Koehler, J.A.; Jones, G.O.L.; Williams, P.J.S.

1993-01-01

The authors study the threshold dependence of electron density and electric field for the observation of coherent auroral echo onset. They make use of Polar Geophysical Institute 83 MHz auroral radar and the EISCAT facility in Scandanavia, to simultaneously get plasma parameter information and coherent scatter observations. They observe an electron density threshold of roughly 2.5x10 11 m -3 for electric fields of 15 - 20 mV/m (near the Farley-Buneman instability threshold). For electric fields of 5 - 10 mV/m echos are not observed for even twice the previous electron density. Echo strength is observed to have other parametric dependences

Cell characteristics of a multiple alloy nano-dots memory structure

International Nuclear Information System (INIS)

Bea, Ji Chel; Lee, Kang-Wook; Tanaka, Tetsu; Koyanagi, Mitsumasa; Song, Yun Heub; Lee, Gae-Hun

2009-01-01

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (∼5.2 eV) and extremely high dot density (∼1.2 × 10 13 cm −2 ) was fabricated. Its structural effect for multiple layers was evaluated and compared to the one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with two to four multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler–Nordheim (FN) tunneling could be a candidate structure for future flash memory

Earliest Memories and Recent Memories of Highly Salient Events--Are They Similar?

Science.gov (United States)

Peterson, Carole; Fowler, Tania; Brandeau, Katherine M.

2015-01-01

Four- to 11-year-old children were interviewed about 2 different sorts of memories in the same home visit: recent memories of highly salient and stressful events--namely, injuries serious enough to require hospital emergency room treatment--and their earliest memories. Injury memories were scored for amount of unique information, completeness…

Simultaneous streak and frame interferometry for electron density measurements of laser produced plasmas

Energy Technology Data Exchange (ETDEWEB)

Quevedo, H. J., E-mail: hjquevedo@utexas.edu; McCormick, M.; Wisher, M.; Bengtson, Roger D.; Ditmire, T. [Center for High Energy Density Science, Department of Physics, University of Texas at Austin, Austin, Texas 78712 (United States)

2016-01-15

A system of two collinear probe beams with different wavelengths and pulse durations was used to capture simultaneously snapshot interferograms and streaked interferograms of laser produced plasmas. The snapshots measured the two dimensional, path-integrated, electron density on a charge-coupled device while the radial temporal evolution of a one dimensional plasma slice was recorded by a streak camera. This dual-probe combination allowed us to select plasmas that were uniform and axisymmetric along the laser direction suitable for retrieving the continuous evolution of the radial electron density of homogeneous plasmas. Demonstration of this double probe system was done by measuring rapidly evolving plasmas on time scales less than 1 ns produced by the interaction of femtosecond, high intensity, laser pulses with argon gas clusters. Experiments aimed at studying homogeneous plasmas from high intensity laser-gas or laser-cluster interaction could benefit from the use of this probing scheme.

High Spectral Density Optical Communication Technologies

CERN Document Server

Nakazawa, Masataka; Miyazaki, Tetsuya

2010-01-01

The latest hot topics of high-spectral density optical communication systems using digital coherent optical fibre communication technologies are covered by this book. History and meaning of a "renaissance" of the technology, requirements to the Peta-bit/s class "new generation network" are also covered in the first part of this book. The main topics treated are electronic and optical devices, digital signal processing including forward error correction, modulation formats as well as transmission and application systems. The book serves as a reference to researchers and engineers.

Electron beam generation in high voltage glow discharges

International Nuclear Information System (INIS)

Rocca, J.J.; Szapiro, B.; Murray, C.

1989-01-01

The generation of intense CW and pulsed electron beams in glow discharges in reviewed. Glow discharge electron guns operate at a pressure of the order of 1 Torr and often have an advantage in applications that require a broad area electron beam in a gaseous atmosphere, such as laser excitation and some aspects of materials processing. Aspects of electron gun design are covered. Diagnostics of the high voltage glow discharges including the electric field distribution mapped by Doppler free laser spectroscopy, and plasma density and electron temperature measurements of the electron yield of different cathode materials under glow discharge conditions are presented

Nonlocal exchange and kinetic-energy density functionals for electronic systems

International Nuclear Information System (INIS)

Glossman, M.D.; Rubio, A.; Balbas, L.C.; Alonso, J.A.

1992-01-01

The nonlocal weighted density approximation (WDA) to the exchange and kinetic-energy functionals of many electron systems proposed several years ago by Alonso and Girifalco is used to compute, within the framework of density functional theory, the ground-state electronic density and total energy of noble gas atoms and of neutral jellium-like sodium clusters containing up to 500 atoms. These results are compared with analogous calculations using the well known Thomas-Fermi-Weizsacker-Dirac (TFWD) approximations for the kinetic (TFW) and exchange (D) energy density functionals. An outstanding improvement of the total and exchange energies, of the density at the nucleus and of the expectation values is obtained for atoms within the WDA scheme. For sodium clusters the authors notice a sizeable contribution of the nonlocal effects to the total energy and to the density profiles. In the limit of very large clusters these effects should affect the surface energy of the bulk metal

Generation of high harmonic free electron laser with phase-merging effect

Energy Technology Data Exchange (ETDEWEB)

Li, Heting, E-mail: liheting@ustc.edu.cn; Jia, Qika; Zhao, Zhouyu

2017-03-01

An easy-to-implement scheme is proposed to produce the longitudinal electron bunch density modulation with phase-merging phenomenon. In this scheme an electron bunch is firstly transversely dispersed in a modified dogleg to generate the exact dependence of electron energy on the transverse position, then it is modulated in a normal modulator. After travelling through a modified chicane with specially designed transfer matrix elements, the density modulation with phase-merging effect is generated which contains high harmonic components of the seed laser. We present theoretical analysis and numerical simulations for seeded soft x-ray free-electron laser. The results demonstrate that this technique can significantly enhance the frequency up-conversion efficiency and allow a seeded FEL operating at very high harmonics.

High-Power-Density, High-Energy-Density Fluorinated Graphene for Primary Lithium Batteries

Directory of Open Access Journals (Sweden)

Guiming Zhong

2018-03-01

Full Text Available Li/CFx is one of the highest-energy-density primary batteries; however, poor rate capability hinders its practical applications in high-power devices. Here we report a preparation of fluorinated graphene (GFx with superior performance through a direct gas fluorination method. We find that the so-called “semi-ionic” C-F bond content in all C-F bonds presents a more critical impact on rate performance of the GFx in comparison with sp2 C content in the GFx, morphology, structure, and specific surface area of the materials. The rate capability remains excellent before the semi-ionic C-F bond proportion in the GFx decreases. Thus, by optimizing semi-ionic C-F content in our GFx, we obtain the optimal x of 0.8, with which the GF0.8 exhibits a very high energy density of 1,073 Wh kg−1 and an excellent power density of 21,460 W kg−1 at a high current density of 10 A g−1. More importantly, our approach opens a new avenue to obtain fluorinated carbon with high energy densities without compromising high power densities.

Diagnosis of Unmagnetized Plasma Electron Number Density and Electron-neutral Collision Frequency by Using Microwave

International Nuclear Information System (INIS)

Yuan Zhongcai; Shi Jiaming; Xu Bo

2005-01-01

The plasma diagnostic method using the transmission attenuation of microwaves at double frequencies (PDMUTAMDF) indicates that the frequency and the electron-neutral collision frequency of the plasma can be deduced by utilizing the transmission attenuation of microwaves at two neighboring frequencies in a non-magnetized plasma. Then the electron density can be obtained from the plasma frequency. The PDMUTAMDF is a simple method to diagnose the plasma indirectly. In this paper, the interaction of electromagnetic waves and the plasma is analyzed. Then, based on the attenuation and the phase shift of a microwave in the plasma, the principle of the PDMUTAMDF is presented. With the diagnostic method, the spatially mean electron density and electron collision frequency of the plasma can be obtained. This method is suitable for the elementary diagnosis of the atmospheric-pressure plasma

Overlap of electron core states for very high compressions

International Nuclear Information System (INIS)

Straub, G.

1985-01-01

At normal density and for modest compressions, the electronic structure of a metal can be accurately described by treating the conduction electrons and their interactions with the usual methods of band theory. The core electrons remain essentially the same as for an isolated free atom and do not participate in the bonding forces responsible for creating a condensed phase. As the density increases, the core electrons begin to ''see'' one another as the overlap of the tails of wave functions can no longer be neglected. The electronic structure of the core electrons is responsible for an effective repulsive interaction that eventually becomes free-electron-like at very high compressions. The electronic structure of the interacting core electrons may be treated in a simple manner using the Atomic Surface Method (ASM). The ASM is a first-principles treatment of the electronic structure involving a rigorous integration of the Schroedinger equation within the atomic-sphere approximation. Solid phase wave functions are constructed from isolated atom wave functions and the band width W/sub l/ and the center of gravity of the band C/sub l/ are obtained from simple formulas. The ASM can also utilize analytic forms of the atomic wave functions and thus provide direct functional dependence of various aspects of the electronic structure. Of particular use in understanding the behavior of the core electrons, the ASM provides the analytic density dependence of the band widths and positions. 8 refs., 2 figs., 1 tab

Single electron-spin memory with a semiconductor quantum dot

International Nuclear Information System (INIS)

Young, Robert J; Dewhurst, Samuel J; Stevenson, R Mark; Atkinson, Paola; Bennett, Anthony J; Ward, Martin B; Cooper, Ken; Ritchie, David A; Shields, Andrew J

2007-01-01

We show storage of the circular polarization of an optical field, transferring it to the spin-state of an individual electron confined in a single semiconductor quantum dot. The state is subsequently read out through the electronically-triggered emission of a single photon. The emitted photon shares the same polarization as the initial pulse but has a different energy, making the transfer of quantum information between different physical systems possible. With an applied magnetic field of 2 T, spin memory is preserved for at least 1000 times more than the exciton's radiative lifetime

High density experiments with gas puffing and ECRH in T-10

International Nuclear Information System (INIS)

Esipchuk, Yu V; Kirneva, N A; Borschegovskij, A A; Chistyakov, V V; Denisov, V Ph; Dremin, M M; Gorbunov, E P; Grashin, S A; Kalupin, D V; Khimchenko, L N; Khramenkov, A V; Kirnev, G S; Krilov, S V; Krupin, V A; Myalton, T B; Pavlov, Yu D; Piterskij, V V; Ploskirev, G N; Poznyak, V I; Roy, I N; Shelukhin, D A; Skosyrev, Yu V; Trukhin, V M; Trukhina, E V; Vershkov, V A; Veschev, E A; Volkov, V V; Zhuravlev, V A

2003-01-01

High density experiments were carried out in T-10 with gas puffing and electron cyclotron resonance heating (with absorbed power value up to 1.4 MW) with oblique and perpendicular power launch. Densities exceeding the Greenwald limit (n Gw ) by up to a factor of 1.8 were achieved in a regime with a high value of the edge safety factor at the current flat-top, q(a)≅8.2. The decrease of q(a) to a value of 3 led to the reduction of the ratio ( n-bar e ) lim /n Gw to 1. Confinement degradation with density increase was not significant up to the density limit. However, the typical T-10 linear increase of energy confinement time with density saturates at n-bar e ≥0.6n Gw . This saturation is the result of the development of an additional transport in the electron heat channel. However, the saturated τ E values exceeded the ITER L-mode scaling predictions by up to a factor of 1.2 and were close to the value predicted by the ITER H-mode scaling. Effect of the strong gas puffing on the plasma confinement and experiments with neon seeding are also discussed in this paper

Magnetic vortex racetrack memory

Energy Technology Data Exchange (ETDEWEB)

Geng, Liwei D.; Jin, Yongmei M., E-mail: ymjin@mtu.edu

2017-02-01

We report a new type of racetrack memory based on current-controlled movement of magnetic vortices in magnetic nanowires with rectangular cross-section and weak perpendicular anisotropy. Data are stored through the core polarity of vortices and each vortex carries a data bit. Besides high density, non-volatility, fast data access, and low power as offered by domain wall racetrack memory, magnetic vortex racetrack memory has additional advantages of no need for constrictions to define data bits, changeable information density, adjustable current magnitude for data propagation, and versatile means of ultrafast vortex core switching. By using micromagnetic simulations, current-controlled motion of magnetic vortices in cobalt nanowire is demonstrated for racetrack memory applications. - Highlights: • Advance fundamental knowledge of current-driven magnetic vortex phenomena. • Report appealing new magnetic racetrack memory based on current-controlled magnetic vortices in nanowires. • Provide a novel approach to adjust current magnitude for data propagation. • Overcome the limitations of domain wall racetrack memory.

Electron acceleration by a radially polarized laser pulse during ionization of low density gases

Directory of Open Access Journals (Sweden)

Kunwar Pal Singh