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Sample records for high-aspect-ratio si nano-pillar

  1. Study on Locally Confined Deposition of Si Nanocrystals in High-Aspect-Ratio Si Nano-Pillar Array for Nano-Electronic and Nano-Photonic Applications

    Science.gov (United States)

    2010-02-23

    the applied electric field on the SiOx, mox is the effective electron mass in the SiOx, m is the free electron mass, B is the barrier height at the...compared to other mechanisms. For example, a simulated direct tunneling current with mox /m ratio of 0.26, the barrier height of 3.8, the oxide thickness...transport path,[24] which is give by * 2 exp exp 1Bthermionic q qVJ A T kT kT               , (5) where A* = 4 pqk2m*/h3 = 120 ( mox

  2. Evolution and Engineering of Precisely Controlled Ge Nanostructures on Scalable Array of Ordered Si Nano-pillars

    Science.gov (United States)

    Wang, Shuguang; Zhou, Tong; Li, Dehui; Zhong, Zhenyang

    2016-06-01

    The scalable array of ordered nano-pillars with precisely controllable quantum nanostructures (QNs) are ideal candidates for the exploration of the fundamental features of cavity quantum electrodynamics. It also has a great potential in the applications of innovative nano-optoelectronic devices for the future quantum communication and integrated photon circuits. Here, we present a synthesis of such hybrid system in combination of the nanosphere lithography and the self-assembly during heteroepitaxy. The precise positioning and controllable evolution of self-assembled Ge QNs, including quantum dot necklace(QDN), QD molecule(QDM) and quantum ring(QR), on Si nano-pillars are readily achieved. Considering the strain relaxation and the non-uniform Ge growth due to the thickness-dependent and anisotropic surface diffusion of adatoms on the pillars, the comprehensive scenario of the Ge growth on Si pillars is discovered. It clarifies the inherent mechanism underlying the controllable growth of the QNs on the pillar. Moreover, it inspires a deliberate two-step growth procedure to engineer the controllable QNs on the pillar. Our results pave a promising avenue to the achievement of desired nano-pillar-QNs system that facilitates the strong light-matter interaction due to both spectra and spatial coupling between the QNs and the cavity modes of a single pillar and the periodic pillars.

  3. Nanofabrication of low extinction coefficient and high-aspect-ratio Si structures for metaphotonic applications

    Science.gov (United States)

    Lee, JeongYub; Song, Byonggwon; Kim, Jaekwan; Lee, Chang-Won; Han, Seunghoon; Baik, Chan-Wook; Jeong, Heejeong; Kim, Yongsung; Lee, Chang Seung

    2016-09-01

    We investigated forming of high refractive index (n), low extinction coefficient (k) of Si dielectrics in visible wavelength ranges. To decrease k, pulsed green laser annealing (GLA) with line beam of a 532-nm wavelength was applied in this study for homogeneous melting. By AFM, XRD and TEM analysis, we examined the defect reduction in various conditions during poly-crystallization. We achieved dielectric nanostructures having optical properties of n>4.2, k<0.06 at 550 nm wavelength and fine pitches down to 40 nm (aspect ratio 3:1) and 130 nm (aspect ratio 7:1) with +/-5% size accuracy. Finally, we realized optical metasurfaces for optical band filters, flat lens and beam deflectors.

  4. Fabrication of high aspect ratio tungsten nanostructures on ultrathin c-Si membranes for extreme UV applications.

    Science.gov (United States)

    Delachat, F; Le Drogoff, B; Constancias, C; Delprat, S; Gautier, E; Chaker, M; Margot, J

    2016-01-15

    In this work, we demonstrate a full process for fabricating high aspect ratio diffraction optics for extreme ultraviolet lithography. The transmissive optics consists in nanometer scale tungsten patterns standing on flat, ultrathin (100 nm) and highly transparent (>85% at 13.5 nm) silicon membranes (diameter of 1 mm). These tungsten patterns were achieved using an innovative pseudo-Bosch etching process based on an inductively coupled plasma ignited in a mixture of SF6 and C4F8. Circular ultra-thin Si membranes were fabricated through a state-of-the-art method using direct-bonding with thermal difference. The silicon membranes were sputter-coated with a few hundred nanometers (100-300 nm) of stress-controlled tungsten and a very thin layer of chromium. Nanoscale features were written in a thin resist layer by electron beam lithography and transferred onto tungsten by plasma etching of both the chromium hard mask and the tungsten layer. This etching process results in highly anisotropic tungsten features at room temperature. The homogeneity and the aspect ratio of the advanced pattern transfer on the membranes were characterized with scanning electron microscopy after focus ion beam milling. An aspect ratio of about 6 for 35 nm size pattern is successfully obtained on a 1 mm diameter 100 nm thick Si membrane. The whole fabrication process is fully compatible with standard industrial semiconductor technology.

  5. Ultra-high aspect ratio poly-Si FinFET using an improved spacer formation technique

    Science.gov (United States)

    Liu, Libin; Liang, Renrong; Wang, Jing; Xu, Jun

    2017-04-01

    An improved spacer formation technique was proposed and developed to fabricate poly-Si fin field-effect transistors (FinFETs) with an ultra-high aspect ratio. The as-demonstrated FinFETs have a fin channel with a width and height of 22 nm and 230 nm, respectively, corresponding to an aspect ratio of 10.5. The electrical and temperature properties of the FinFETs are described in detail in this paper. The poly-Si FinFETs exhibit a steep subthreshold swing (196 mV/dec), a low leakage current (∼10-14 A), a high on/off current ratio (2.2 × 107 at VDS = 0.1 V), and a low drain-induced barrier lowering effect (0.28 V). The excellent switching characteristics are attributed to the ultrathin channel body and the multi-gate structure combined with high-k Al2O3 dielectric. Furthermore, the electron field-effective mobility increases as the temperature increases. An analytical fitting model was derived and was utilized to account for this phenomenon. The fitting results indicate that the positive temperature coefficient originates from the grain boundary-controlled mechanism in the low gate voltage regime.

  6. Effect of the out-of-plane stress on the properties of epitaxial SrTiO3 films with nano-pillar array on Si-substrate

    Science.gov (United States)

    Bai, Gang; Xie, Qiyun; Liu, Zhiguo; Wu, Dongmei

    2015-08-01

    A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO3 films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO3 films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO3 films similar to PZT and other lead-based ferroelectrics can be expected.

  7. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity.

    Science.gov (United States)

    Zeniou, A; Ellinas, K; Olziersky, A; Gogolides, E

    2014-01-24

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min(-1) using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  8. Ultra-high aspect ratio Si nanowires fabricated with plasma etching: plasma processing, mechanical stability analysis against adhesion and capillary forces and oleophobicity

    Science.gov (United States)

    Zeniou, A.; Ellinas, K.; Olziersky, A.; Gogolides, E.

    2014-01-01

    Room-temperature deep Si etching using time-multiplexed deep reactive ion etching (DRIE) processes is investigated to fabricate ultra-high aspect ratio Si nanowires (SiNWs) perpendicular to the silicon substrate. Nanopatterning is achieved using either top-down techniques (e.g. electron beam lithography) or colloidal polystyrene (PS) sphere self-assembly. The latter is a faster and more economical method if imperfections in diameter and position can be tolerated. We demonstrate wire radii from below 100 nm to several micrometers, and aspect ratios (ARs) above 100:1 with etching rates above 1 μm min-1 using classical mass flow controllers with pulsing rise times of seconds. The mechanical stability of these nanowires is studied theoretically and experimentally against adhesion and capillary forces. It is shown that above ARs of the order of 50:1 for spacing 1 μm, SiNWs tend to bend due to adhesion forces between them. Such large adhesion forces are due to the high surface energy of silicon. Wetting the SiNWs with water and drying also gives rise to capillary forces. We find that capillary forces may be less important for SiNW collapse/bending compared to adhesion forces of dry SiNWs, contrary to what is observed for polymeric nanowires/nanopillars which have a much lower surface energy compared to silicon. Finally we show that SiNW arrays have oleophobic and superoleophobic properties, i.e. they exhibit excellent anti-wetting properties for a wide range of liquids and oils due to the re-entrant profile produced by the DRIE process and the well-designed spacing.

  9. Effect of the out-of-plane stress on the properties of epitaxial SrTiO{sub 3} films with nano-pillar array on Si-substrate

    Energy Technology Data Exchange (ETDEWEB)

    Bai, Gang, E-mail: baigang@njupt.edu.cn [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Xie, Qiyun [Jiangsu Provincial Engineering Laboratory for RF Integration and Micropackaging and College of Electronic Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China); Liu, Zhiguo [Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093 (China); Wu, Dongmei [School of Automation, Nanjing University of Posts and Telecommunications, Nanjing 210023 (China)

    2015-08-21

    A nonlinear thermodynamic formalism has been proposed to calculate the physical properties of the epitaxial SrTiO{sub 3} films containing vertical nano-pillar array on Si-substrate. The out-of-plane stress induced by the mismatch between film and nano-pillars provides an effective way to tune the physical properties of ferroelectric SrTiO{sub 3} films. Tensile out-of-plane stress raises the phase transition temperature and increases the out-of-plane polarization, but decreases the out-of-plane dielectric constant below Curie temperature, pyroelectric coefficient, and piezoelectric coefficient. These results showed that by properly controlling the out-of-plane stress, the out-of-plane stress induced paraelectric-ferroelectric phase transformation will appear near room temperature. Excellent dielectric, pyroelectric, piezoelectric properties of these SrTiO{sub 3} films similar to PZT and other lead-based ferroelectrics can be expected.

  10. High Aspect Ratio Semiconductor Heterojunction Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Redwing, Joan [Pennsylvania State Univ., University Park, PA (United States). Dept. of Material Science and Engineering; Mallouk, Tom [Pennsylvania State Univ., University Park, PA (United States). Dept. of Chemistry; Mayer, Theresa [Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering; Dickey, Elizabeth [Pennsylvania State Univ., University Park, PA (United States). Dept. of Materials Science and Engineering; Wronski, Chris [Pennsylvania State Univ., University Park, PA (United States). Dept. of Electrical Engineering

    2013-05-17

    The project focused on the development of high aspect ratio silicon heterojunction (HARSH) solar cells. The solar cells developed in this study consisted of high density vertical arrays of radial junction silicon microwires/pillars formed on Si substrates. Prior studies have demonstrated that vertical Si wire/pillar arrays enable reduced reflectivity and improved light trapping characteristics compared to planar solar cells. In addition, the radial junction structure offers the possibility of increased carrier collection in solar cells fabricated using material with short carrier diffusion lengths. However, the high junction and surface area of radial junction Si wire/pillar array devices can be problematic and lead to increased diode leakage and enhanced surface recombination. This study investigated the use of amorphous hydrogenated Si in the form of a heterojunction-intrinsic-thin layer (HIT) structure as a junction formation method for these devices. The HIT layer structure has widely been employed to reduce surface recombination in planar crystalline Si solar cells. Consequently, it was anticipated that it would also provide significant benefits to the performance of radial junction Si wire/pillar array devices. The overall goals of the project were to demonstrate a HARSH cell with a HIT-type structure in the radial junction Si wire/pillar array configuration and to develop potentially low cost pathways to fabricate these devices. Our studies demonstrated that the HIT structure lead to significant improvements in the open circuit voltage (Voc>0.5) of radial junction Si pillar array devices compared to devices fabricated using junctions formed by thermal diffusion or low pressure chemical vapor deposition (LPCVD). In addition, our work experimentally demonstrated that the radial junction structure lead to improvements in efficiency compared to comparable planar devices for devices fabricated using heavily doped Si that had reduced carrier diffusion

  11. Noise of Embedded High Aspect Ratio Nozzles

    Science.gov (United States)

    Bridges, James E.

    2011-01-01

    A family of high aspect ratio nozzles were designed to provide a parametric database of canonical embedded propulsion concepts. Nozzle throat geometries with aspect ratios of 2:1, 4:1, and 8:1 were chosen, all with convergent nozzle areas. The transition from the typical round duct to the rectangular nozzle was designed very carefully to produce a flow at the nozzle exit that was uniform and free from swirl. Once the basic rectangular nozzles were designed, external features common to embedded propulsion systems were added: extended lower lip (a.k.a. bevel, aft deck), differing sidewalls, and chevrons. For the latter detailed Reynolds-averaged Navier-Stokes (RANS) computational fluid dynamics (CFD) simulations were made to predict the thrust performance and to optimize parameters such as bevel length, and chevron penetration and azimuthal curvature. Seventeen of these nozzles were fabricated at a scale providing a 2.13 inch diameter equivalent area throat." ! The seventeen nozzles were tested for far-field noise and a few data were presented here on the effect of aspect ratio, bevel length, and chevron count and penetration. The sound field of the 2:1 aspect ratio rectangular jet was very nearly axisymmetric, but the 4:1 and 8:1 were not, the noise on their minor axes being louder than the major axes. Adding bevel length increased the noise of these nozzles, especially on their minor axes, both toward the long and short sides of the beveled nozzle. Chevrons were only added to the 2:1 rectangular jet. Adding 4 chevrons per wide side produced some decrease at aft angles, but increased the high frequency noise at right angles to the jet flow. This trend increased with increasing chevron penetration. Doubling the number of chevrons while maintaining their penetration decreased these effects. Empirical models of the parametric effect of these nozzles were constructed and quantify the trends stated above." Because it is the objective of the Supersonics Project that

  12. High aspect ratio AFM Probe processing by helium-ion-beam induced deposition.

    Science.gov (United States)

    Onishi, Keiko; Guo, Hongxuan; Nagano, Syoko; Fujita, Daisuke

    2014-11-01

    A Scanning Helium Ion Microscope (SHIM) is a high resolution surface observation instrument similar to a Scanning Electron Microscope (SEM) since both instruments employ finely focused particle beams of ions or electrons [1]. The apparent difference is that SHIMs can be used not only for a sub-nanometer scale resolution microscopic research, but also for the applications of very fine fabrication and direct lithography of surfaces at the nanoscale dimensions. On the other hand, atomic force microscope (AFM) is another type of high resolution microscopy which can measure a three-dimensional surface morphology by tracing a fine probe with a sharp tip apex on a specimen's surface.In order to measure highly uneven and concavo-convex surfaces by AFM, the probe of a high aspect ratio with a sharp tip is much more necessary than the probe of a general quadrangular pyramid shape. In this paper we report the manufacture of the probe tip of the high aspect ratio by ion-beam induced gas deposition using a nanoscale helium ion beam of SHIM.Gas of platinum organic compound was injected into the sample surface neighborhood in the vacuum chamber of SHIM. The decomposition of the gas and the precipitation of the involved metal brought up a platinum nano-object in a pillar shape on the normal commercial AFM probe tip. A SHIM system (Carl Zeiss, Orion Plus) equipped with the gas injection system (OmniProbe, OmniGIS) was used for the research. While the vacuum being kept to work, we injected platinum organic compound ((CH3)3(CH3C5H4)Pt) into the sample neighborhood and irradiated the helium ion beam with the shape of a point on the apex of the AFM probe tip. It is found that we can control the length of the Pt nano-pillar by irradiation time of the helium ion beam. The AFM probe which brought up a Pt nano-pillar is shown in Figure 1. It is revealed that a high-aspect-ratio Pt nano-pillar of ∼40nm diameter and up to ∼2000 nm length can be grown. In addition, for possible heating

  13. Scattering and extinction from high-aspect-ratio trenches

    DEFF Research Database (Denmark)

    Roberts, Alexander Sylvester; Søndergaard, Thomas; Chirumamilla, Manohar;

    2015-01-01

    We construct a semi-analytical model describing the scattering, extinction and absorption properties of a high aspect-ratio trench in a metallic film. We find that these trenches act as highly efficient scatterers of free waves. In the perfect conductor limit, which for many metals is approached...

  14. Fabrication of high-aspect ratio SU-8 micropillar arrays

    DEFF Research Database (Denmark)

    Amato, Letizia; Keller, Stephan S.; Heiskanen, Arto

    2012-01-01

    SU-8 is the preferred photoresist for development and fabrication of high aspect ratio (HAR) three dimensional patterns. However, processing of SU-8 is a challenging task, especially when the film thickness as well as the aspect ratio is increasing and the size of the features is close to the res...

  15. Aeroelastic stability analysis of high aspect ratio aircraft wings

    OpenAIRE

    Banerjee, J. R.; Liu, X.; Kassem, H. I.

    2014-01-01

    Free vibration and flutter analyses of two types of high aspect ratio aircraft wings are presented. The wing is idealised as an assembly of bending-torsion coupled beams using the dynamic stiffness method leading to a nonlinear eigenvalue problem. This problem is solved using the Wattrick-Williams algorithm yielding natural frequencies and mode shapes. The flutter analysis is carried out using the normal mode method in conjunction with generalised coordinates and two-dimensional unsteady aero...

  16. Fabrication of nanopore and nanoparticle arrays with high aspect ratio AAO masks

    Science.gov (United States)

    Li, Z. P.; Xu, Z. M.; Qu, X. P.; Wang, S. B.; Peng, J.; Mei, L. H.

    2017-03-01

    How to use high aspect ratio anodic aluminum oxide (AAO) membranes as an etching and evaporation mask is one of the unsolved problems in the application of nanostructured arrays. Here we describe the versatile utilizations of the highly ordered AAO membranes with a high aspect ratio of more than 20 used as universal masks for the formation of various nanostructure arrays on various substrates. The result shows that the fabricated nanopore and nanoparticle arrays of substrates inherit the regularity of the AAO membranes completely. The flat AAO substrates and uneven AAO frontages were attached to the Si substrates respectively as an etching mask, which demonstrates that the two kinds of replication, positive and negative, represent the replication of the mirroring of Si substrates relative to the flat AAO substrates and uneven AAO frontages. Our work is a breakthrough for the broad research field of surface nano-masking.

  17. High aspect ratio 3D nanopatterning using Proton Beam Writing

    Science.gov (United States)

    van Kan, Jeroen A.

    2009-03-01

    Proton beam writing (PBW) is a new direct write lithography using MeV protons, and is unique because of its ability to fabricate 3D structures of high aspect ratio structures directly in resist material like PMMA, SU-8 and HSQ. The introduction by CIBA, Singapore of a dedicated PBW facility, capable of writing at the micro- and nano- scale has facilitated high aspect ratio nanostructuring. PBW has demontrated high aspect ratio walls in HSQ down to the 20nm level. In recent experiments details down to sub 20 nm have been achieved in PMMA. Monte-Carlo calculations have shown that structuring down to the nanometer level is feasible. All this is possible because of the virtual absence of proximity effects (unwanted resist exposure by stray secondary electrons). The design and performance of this unique nanoprobe facility will be discussed. Two potential fields of application (eg nanofluidics and nanowire integration) of PBW will be discussed. Currently nanofluidics devices have typically only one critical dimension below 100 nm. Here we will introduce PBW as a powerful technique to fabricate molds for replication of PDMS nanofluidic circuits down to the sub 100 nm level in two dimensions. Initial chips with dimension down to 150 nm have successfully been used to study DNA folding in quasi-1d nanochannels in tandem with fluorescence imaging. Since the size of these PDMS nanochannels is not limited by the PDMS or PBW further miniaturization down to the sub 100 nm level is a realistic goal and initial results will be discussed. Nanowires are a potential building block for nano-electronic devices, and one critical problem is the integration of nanowires to form contacts. Porous alumina templates and high energy ion-tracks have been used for the production of nanowire templates in a random orientation. Since PBW is the only true 3D direct write nanolithographic technique it can be used to fabricate nanowire templates in a controlled manner.

  18. Injection molding of high aspect ratio sub-100 nm nanostructures

    DEFF Research Database (Denmark)

    Matschuk, Maria; Larsen, Niels B

    2013-01-01

    with FDTS. Reduced adhesion forces are consistent with lowered friction that reduces the risk of fracturing the nanoscopic pillars during demolding. Optimized mold surface chemistry and associated injection molding conditions permitted the fabrication of square arrays of 40 nm wide and 107 nm high (aspect......We have explored the use of mold coatings and optimized processing conditions to injection mold high aspect ratio nanostructures (height-to-width >1) in cyclic olefin copolymer (COC). Optimizing the molding parameters on uncoated nickel molds resulted in slight improvements in replication quality...

  19. High aspect ratio transmission line circuits micromachined in silicon

    Science.gov (United States)

    Todd, Shane Truman

    The performance of complimentary metal-oxide-semiconductor (CMOS) monolithic microwave integrated circuits (MMICs) fabricated on silicon has improved dramatically. The scaling down of silicon transistors has increased the maximum frequency of transistors to the point where silicon MMICs have become a viable alternative to compound semiconductor MMICs in certain applications. A fundamental problem still exists in silicon MMICs however in that transmission lines fabricated on silicon can suffer from high loss due to the finite conductivity of the silicon substrate. A novel approach for creating low-loss transmission lines on silicon is presented in this work. Low-loss transmission lines are created on low resistivity silicon by using a micromachining method that combines silicon deep reactive ion etching (DRIE), thermal oxidation, electroplating, and planarization. Two types of high aspect ratio transmission lines are created with this method including high aspect ratio coplanar waveguide (hicoplanar) and semi-rectangular coaxial (semicoaxial). Transmission lines with impedances ranging from 20--80 O have been fabricated with minimum measured loss lower than 1 dB/cm at 67 GHz. Low-loss dielectrics are created for the high aspect ratio transmission lines using the mesa merging method. The mesa merging method works by creating silicon mesa arrays using DRIE and then converting and merging the mesa arrays into a solid oxide dielectric using thermal oxidation. The transmission lines are designed so that the fields penetrate the low-loss oxide dielectric and are isolated from the lossy silicon substrate. The mesa merging method has successfully created large volume oxide with depth up to 65 microm and width up to 240 microm in short oxidation times. Other advantages of the high aspect ratio transmission lines are demonstrated including low-loss over a wide impedance range, high isolation, and high coupling for coupled-line circuits. Transmission line models have been

  20. Anomalous dynamic behaviour of optically trapped high aspect ratio nanowires

    CERN Document Server

    Toe, Wen Jun; Angstmann, Christopher; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati; Henry, Bruce; Reece, Peter J

    2015-01-01

    We investigate the dynamics of high aspect ratio nanowires trapped axially in a single gradient force optical tweezers. A power spectrum analysis of the Brownian dynamics reveals a broad spectral resonance of the order of a kHz with peak properties that are strongly dependent on the input trapping power. Modelling of the dynamical equations of motion of the trapped nanowire that incorporate non-conservative effects through asymmetric coupling between translational and rotational degrees of freedom provides excellent agreement with the experimental observations. An associated observation of persistent cyclical motion around the equilibrium trapping position using winding analysis provides further evidence for the influence of non-conservative forces.

  1. High Aspect-Ratio Neural Probes using Conventional Blade Dicing

    Science.gov (United States)

    Goncalves, S. B.; Ribeiro, J. F.; Silva, A. F.; Correia, J. H.

    2016-10-01

    Exploring deep neural circuits has triggered the development of long penetrating neural probes. Moreover, driven by brain displacement, the long neural probes require also a high aspect-ratio shafts design. In this paper, a simple and reproducible method of manufacturing long-shafts neural probes using blade dicing technology is presented. Results shows shafts up to 8 mm long and 200 µm wide, features competitive to the current state-of-art, being its outline simply accomplished by a single blade dicing program. Therefore, conventional blade dicing presents itself as a viable option to manufacture long neural probes.

  2. High-aspect ratio magnetic nanocomposite polymer cilium

    Science.gov (United States)

    Rahbar, M.; Tseng, H. Y.; Gray, B. L.

    2014-03-01

    This paper presents a new fabrication technique to achieve ultra high-aspect ratio artificial cilia micro-patterned from flexible highly magnetic rare earth nanoparticle-doped polymers. We have developed a simple, inexpensive and scalable fabrication method to create cilia structures that can be actuated by miniature electromagnets, that are suitable to be used for lab-on-a chip (LOC) and micro-total-analysis-system (μ-TAS) applications such as mixers and flow-control elements. The magnetic cilia are fabricated and magnetically polarized directly in microfluidic channels or reaction chambers, allowing for easy integration with complex microfluidic systems. These cilia structures can be combined on a single chip with other microfluidic components employing the same permanently magnetic nano-composite polymer (MNCP), such as valves or pumps. Rare earth permanent magnetic powder, (Nd0.7Ce0.3)10.5Fe83.9B5.6, is used to dope polydimethylsiloxane (PDMS), resulting in a highly flexible M-NCP of much higher magnetization and remanence [1] than ferromagnetic polymers typically employed in magnetic microfluidics. Sacrificial poly(ethylene-glycol) (PEG) is used to mold the highly magnetic polymer into ultra high-aspect ratio artificial cilia. Cilia structures with aspect ratio exceeding 8:0.13 can be easily fabricated using this technique and are actuated using miniature electromagnets to achieve a high range of motion/vibration.

  3. Formation of High Aspect Ratio Microcoil Using Dipping Method

    Science.gov (United States)

    Noda, Daiji; Yamashita, Shuhei; Matsumoto, Yoshifumi; Setomoto, Masaru; Hattori, Tadashi

    Coils are used in many electronic devices as inductors in mobile units such as mobile phone, digital cameras, etc. Inductance and quality factor of coils are very important value of the performance. Therefore, the requests for coils are small size, high inductance, low power consumption, etc. However, coils are unsuitable for miniaturization because of its structure. Therefore, we have proposed and developed the microcoils of high aspect ratio with the dipping method and an X-ray lithography technique. In dipping method, centrifugal force and highly viscous photoresist solution were key points to evenly apply resist in the form of thick film on metal bar. The film thickness of resist on bar was achieved about 50 μm after single coating. Using these techniques, we succeeded in creating threaded groove structure with 10 μm lines and spaces on 1 mm brass bar. In this case, the aspect ratio was achieved five. It is very expected the high performance microcoil with high aspect ratio lines could be manufactured in spite of the miniature size.

  4. High aspect ratio channels in glass and porous silicon

    Energy Technology Data Exchange (ETDEWEB)

    Liang, H.D. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Dang, Z.Y. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Wu, J.F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583 (Singapore); Kan, J.A. van; Qureshi, S. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Ynsa, M.D.; Torres-Costa, V. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Centro de Micro-Análisis de Materiales (CMAM), Universidad Autónoma de Madrid, Campus de Cantoblanco Edif. 22, Faraday 3, E-28049 Madrid (Spain); Maira, A. [Department of Applied Physics, Universidad Autónoma de Madrid, Madrid, Campus de Cantoblanco, 28049 Madrid (Spain); Venkatesan, T.V. [Nanoscience and Nanotechnology Initiative (NNI), National University of Singapore, Singapore 117411 (Singapore); Breese, M.B.H., E-mail: phymbhb@nus.edu.sg [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

    2017-03-01

    We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100 μm deep or 100 nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.

  5. Improving acousto-optical interaction by high aspect ratio electrodes

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard

    In recent years experiments have shown that optical waves in waveguides can be modulated by mechanical stresses from surface acoustic waves (SAW), which have most of their energy density concentrated at the surface. In these experiments the SAWs are generated in piezoelectric materials...... by conventional interdigital transducers consisting of thin electrodes deposited at the surface. In this work the finite element method is employed to investigate if the acousto-optical interaction can be enhanced by generating the SAWs by interdigital transducers consisting of high aspect ratio electrodes....... With a periodic model it is first shown that these tall electrodes introduce several new confined SAW modes with slow phase velocities because of mechanical energy storage in the electrodes. The periodic model is then extended to a finite model by using perfectly matched layers at the substrate borders...

  6. High aspect ratio channels in glass and porous silicon

    Science.gov (United States)

    Liang, H. D.; Dang, Z. Y.; Wu, J. F.; van Kan, J. A.; Qureshi, S.; Ynsa, M. D.; Torres-Costa, V.; Maira, A.; Venkatesan, T. V.; Breese, M. B. H.

    2017-03-01

    We have developed a micromachining process to produce high-aspect-ratio channels and holes in glass and porous silicon. Our process utilizes MeV proton beam irradiation of silicon using direct writing with a focused beam, followed by electrochemical etching. To increase throughput we have also developed another process for large area ion irradiation based on a radiation-resistant gold surface mask, allowing many square inches to be patterned. We present a study of the achievable channel width, depth and period and sidewall verticality for a range of channels which can be over 100 μm deep or 100 nm wide with aspect ratios up to 80. This process overcomes the difficulty of machining glass on a micro- and nanometer scale which has limited many areas of applications in different fields such as microelectronics and microfluidics.

  7. Dielectric spectroscopy of high aspect ratio graphene-polyurethane nanocomposites

    Science.gov (United States)

    Jan, Rahim; Habib, Amir; Abbassi, Hina; Amir, Shahid

    2015-03-01

    High aspect ratio graphene nanosheets (GNS), prepared via liquid exfoliation, are homogeneously dispersed in thermoplastic polyurethane (TPU). Dielectric spectroscopy results are reported for these nanocomposites (up to 0.55 vol. % GNS) in the frequency range of 100 Hz to 5 MHz. The as-prepared GNS increased the AC conductivity 10-1000 times across the given frequency range. The dielectric constant is increased 5-6 times at 100 Hz for the maximum loading of GNS when compared with the pristine TPU, with subsequently high dielectric loss making them a suitable candidate for high energy dissipation applications such as EMI shielding. The temperature effects on the dielectric characteristics of 0.55 vol. % GNS/TPU nanocomposites beyond 400 K are more pronounced due to the interfacial and orientation polarization. Mechanical characteristics evaluation of GNS/TPU composites shows a marked increase in the ultimate tensile strength without compromising their ductility and stiffness. [Figure not available: see fulltext.

  8. Large eddy simulation of a high aspect ratio combustor

    Science.gov (United States)

    Kirtas, Mehmet

    The present research investigates the details of mixture preparation and combustion in a two-stroke, small-scale research engine with a numerical methodology based on large eddy simulation (LES) technique. A major motivation to study such small-scale engines is their potential use in applications requiring portable power sources with high power density. The investigated research engine has a rectangular planform with a thickness very close to quenching limits of typical hydrocarbon fuels. As such, the combustor has a high aspect ratio (defined as the ratio of surface area to volume) that makes it different than the conventional engines which typically have small aspect ratios to avoid intense heat losses from the combustor in the bulk flame propagation period. In most other aspects, this engine involves all the main characteristics of traditional reciprocating engines. A previous experimental work has identified some major design problems and demonstrated the feasibility of cyclic combustion in the high aspect ratio combustor. Because of the difficulty of carrying out experimental studies in such small devices, resolving all flow structures and completely characterizing the flame propagation have been an enormously challenging task. The numerical methodology developed in this work attempts to complement these previous studies by providing a complete evolution of flow variables. Results of the present study demonstrated strengths of the proposed methodology in revealing physical processes occuring in a typical operation of the high aspect ratio combustor. For example, in the scavenging phase, the dominant flow structure is a tumble vortex that forms due to the high velocity reactant jet (premixed) interacting with the walls of the combustor. Since the scavenging phase is a long process (about three quarters of the whole cycle), the impact of the vortex is substantial on mixture preparation for the next combustion phase. LES gives the complete evolution of this flow

  9. Wafer-scale fabrication of high-aspect ratio nanochannels based on edge-lithography technique.

    Science.gov (United States)

    Xie, Quan; Zhou, Qing; Xie, Fei; Sang, Jianming; Wang, Wei; Zhang, Haixia Alice; Wu, Wengang; Li, Zhihong

    2012-03-01

    This paper introduced a wafer-scale fabrication approach for the preparation of nanochannels with high-aspect ratio (the ratio of the channel depth to its width). Edge lithography was used to pattern nanogaps in an aluminum film, which was functioned as deep reactive ion etching mask thereafter to form the nanochannel. Nanochannels with aspect ratio up to 172 and width down to 44 nm were successfully fabricated on a 4-inch Si wafer with width nonuniformity less than 13.6%. A microfluidic chip integrated with nanometer-sized filters was successfully fabricated by utilizing the present method for geometric-controllable nanoparticle packing.

  10. Cryogenic Etching of High Aspect Ratio 400 nm Pitch Silicon Gratings.

    Science.gov (United States)

    Miao, Houxun; Chen, Lei; Mirzaeimoghri, Mona; Kasica, Richard; Wen, Han

    2016-10-01

    The cryogenic process and Bosch process are two widely used processes for reactive ion etching of high aspect ratio silicon structures. This paper focuses on the cryogenic deep etching of 400 nm pitch silicon gratings with various etching mask materials including polymer, Cr, SiO2 and Cr-on-polymer. The undercut is found to be the key factor limiting the achievable aspect ratio for the direct hard masks of Cr and SiO2, while the etch selectivity responds to the limitation of the polymer mask. The Cr-on-polymer mask provides the same high selectivity as Cr and reduces the excessive undercut introduced by direct hard masks. By optimizing the etching parameters, we etched a 400 nm pitch grating to ≈ 10.6 μm depth, corresponding to an aspect ratio of ≈ 53.

  11. Shape matters: synthesis and biomedical applications of high aspect ratio magnetic nanomaterials

    OpenAIRE

    Raluca M Fratila; Rivera-Fernández, Sara; Fuente, Jesús M. de la

    2015-01-01

    High aspect ratio magnetic nanomaterials possess anisotropic properties that make them attractive for biological applications. Their elongated shape enables multivalent interactions with receptors through the introduction of multiple targeting units on their surface, thus enhancing cell internalization. Moreover, due to their magnetic anisotropy, high aspect ratio nanomaterials can outperform their spherical analogues as contrast agents for magnetic resonance imaging (MRI) applications. In th...

  12. Dielectrophoretically structured piezoelectric composites with high aspect ratio piezoelectric particles inclusions

    NARCIS (Netherlands)

    Ende, D.A. van den; Kempen, S.E. van; Wu, X.; Groen, W.A.; Randall, C.A.; Zwaag, S. van der

    2012-01-01

    Piezoelectric composites were prepared by dielectrophoretic alignment of high aspect ratio piezoelectric particles in a thermosetting polymer matrix. A high level of alignment was achieved in the cured composite from a resin containing randomly oriented high aspect ratio particles. Upon application

  13. Hot punching of high-aspect-ratio 3D polymeric microstructures for drug delivery

    DEFF Research Database (Denmark)

    Petersen, Ritika Singh; Keller, Stephan Sylvest; Boisen, Anja

    2015-01-01

    Hot punching: a highly versatile method of fabricating high-aspect-ratio 3D microstructures for drug delivery with good replication fidelity and yield.......Hot punching: a highly versatile method of fabricating high-aspect-ratio 3D microstructures for drug delivery with good replication fidelity and yield....

  14. Impacts of thermal annealing temperature on memory properties of charge trapping memory with NiO nano-pillars

    Science.gov (United States)

    Yan, Xiaobing; Yang, Tao; Jia, Xinlei; Zhao, Jianhui; Zhou, Zhenyu

    2017-03-01

    In this work, Au/SiO2/NiO/SiO2/Si structure charge trapping memory using NiO as the charge trapping layer was fabricated, and the impacts of the annealing temperature on the charge trapping memory performance were investigated in detail. The sample thermal annealed at 750 °C indicated a large memory window of 2.07 V under a low sweeping voltage of ± 5 V, which also has excellent charge retention properties with only small charge loss of ∼4.9% after more than 104 s retention. The high resolved transmission electron microscopy shows that the NiO films grew as nano-pillars structure. It is proposed that the excellent memory characteristics of the device are attributed to the inherent atomic defects and oxygen vacancies accumulated by the grain boundaries around NiO nano-pillars. Meanwhile the interface inter-diffusion formed by thermal annealing process is also an indispensable factor for the excellent memory characteristics of the device.

  15. GaN nanowire tip for high aspect ratio nano-scale AFM metrology (Conference Presentation)

    Science.gov (United States)

    Behzadirad, Mahmoud; Dawson, Noel; Nami, Mohsen; Rishinaramangalam, Ashwin K.; Feezell, Daniel F.; Busani, Tito L.

    2016-09-01

    In this study we introduce Gallium Nitride (GaN) nanowire (NW) as high aspect ratio tip with excellent durability for nano-scale metrology. GaN NWs have superior mechanical property and young modulus compare to commercial Si and Carbon tips which results in having less bending issue during measurement. The GaN NWs are prepared via two different methods: i) Catalyst-free selected area growth, using Metal Organic Chemical Vapor Deposition (MOCVD), ii) top-down approach by employing Au nanoparticles as the mask material in dry-etch process. To achieve small diameter tips, the semipolar planes of the NWs grown by MOCVD are etched using AZ400k. The diameter of the NWs fabricated using the top down process is controlled by using different size of nanoparticles and by Inductively Coupled Plasma etching. NWs with various diameters were manipulated on Si cantilevers using Focus Ion Beam (FIB) to make tips for AFM measurement. A Si (110) substrate containing nano-scale grooves with vertical 900 walls were used as a sample for inspection. AFM measurements were carried out in tapping modes for both types of nanowires (top-down and bottom-up grown nanowires) and results are compared with conventional Si and carbon nanotube tips. It is shown our fabricated tips are robust and have improved edge resolution over conventional Si tips. GaN tips made with NW's fabricated using our top down method are also shown to retain the gold nanoparticle at tip, which showed enhanced field effects in Raman spectroscopy.

  16. Wettability transition of plasma-treated polystyrene micro/nano pillars-aligned patterns

    Directory of Open Access Journals (Sweden)

    2010-12-01

    Full Text Available This paper reports the wettability transition of plasma-treated polystyrene (PS micro/nano pillars-aligned patterns. The micro/nano pillars were prepared using hot embossing on silicon microporous template and alumina nanoporous template, which were fabricated by ultraviolet (UV lithography and inductive coupled plasma (ICP etching, and two-step anodic oxidation, respectively. The results indicate that the combination of micro/nano patterning and plasma irradiation can easily regulate wettabilities of PS surfaces, i.e. from hydrophilicity to hydrophobicity, or from hydrophobicity to superhydrophilicity. During the wettability transition from hydrophobicity to hydrophilicity there is only mild hydrophilicity loss. After plasma irradiation, moreover, the wettability of PS micro/nano pillars-aligned patterns is more stable than that of flat PS surfaces. The observed wettability transition and wettability stability of PS micro/nano pillars-aligned patterns are new phenomena, which may have potential in creating programmable functional polymer surfaces.

  17. High aspect ratio silicon nanowires control fibroblast adhesion and cytoskeleton organization.

    Science.gov (United States)

    Andolfi, Laura; Murello, Anna; Cassese, Damiano; Ban, Jelena; Dal Zilio, Simone; Lazzarino, Marco

    2017-04-18

    Cell-cell and cell-matrix interactions are essential to the survival and proliferation of most cells, and are responsible for triggering a wide range of biochemical pathways. More recently, the biomechanical role of those interactions was highlighted, showing, for instance, that adhesion forces are essential for cytoskeleton organization. Silicon nanowires (Si NWs) with their small size, high aspect ratio and anisotropic mechanical response represent a useful model to investigate the forces involved in the adhesion processes and their role in cellular development. In this work we explored and quantified, by single cell force spectroscopy (SCFS), the interaction of mouse embryonic fibroblasts with a flexible forest of Si NWs. We observed that the cell adhesion forces are comparable to those found on collagen and bare glass coverslip, analogously the membrane tether extraction forces are similar to that on collagen but stronger than that on bare flat glass. Cell survival did not depend significantly on the substrate, although a reduced proliferation after 36 h was observed. On the contrary both cell morphology and cytoskeleton organization revealed striking differences. The cell morphology on Si-NW was characterized by a large number of filopodia and a significant decrease of the cell mobility. The cytoskeleton organization was characterized by the absence of actin fibers, which were instead dominant on collagen and flat glass support. Such findings suggest that the mechanical properties of disordered Si NWs, and in particular their strong asymmetry, play a major role in the adhesion, morphology and cytoskeleton organization processes. Indeed, while adhesion measurements by SCFS provide out-of-plane forces values consistent with those measured on conventional substrates, weaker in-plane forces hinder proper cytoskeleton organization and migration processes.

  18. Ultra-high aspect ratio replaceable AFM tips using deformation-suppressed focused ion beam milling

    DEFF Research Database (Denmark)

    Savenko, Alexey; Yildiz, Izzet; Petersen, Dirch Hjorth;

    2013-01-01

    Fabrication of ultra-high aspect ratio exchangeable and customizable tips for atomic force microscopy (AFM) using lateral focused ion beam (FIB) milling is presented. While on-axis FIB milling does allow high aspect ratio (HAR) AFM tips to be defined, lateral milling gives far better flexibility...... FIB milling strategies for obtaining sharper tips are discussed. Finally, assembly of the HAR tips on a custom-designed probe as well as the first AFM scanning is shown....

  19. Ferromagnetism of self-organized Ge{sub 1-x}Mn{sub x} nano-pillars

    Energy Technology Data Exchange (ETDEWEB)

    Devillers, T.; Jamet, M.; Barski, A.; Poydenot, V.; Dujardin, R.; Bayle Guillemaud, P.; Bellet Amalric, E.; Mattana, R. [Departement de Recherche Fondamentale sur la Matiere Condensee, Service de Physique des Materiaux et Microstructures, CEA Grenoble, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Rothman, J. [Laboratoire d' Electronique de Technologie de l' Information, Laboratoire Infrarouge, CEA Grenoble, 17 avenue des Martyrs, 38054 Grenoble Cedex 9 (France); Cibert, J. [Laboratoire Louis Neel, CNRS, BP166, 38042 Grenoble Cedex 9 (France); Tatarenko, S. [Laboratoire de Spectrometrie Physique, BP 87, 38402 Saint-Martin d' Heres (France)

    2006-07-01

    In the search for high-T{sub C} Si or Ge based ferromagnetic semiconductors, we present here the magnetic and transport properties of Ge{sub 1-x}Mn{sub x} nano-pillars. These pillars self-organize during the MBE growth of thin Mn doped (6%) Ge films as a consequence of the in-plane and out-of-plane diffusion of Mn atoms. Their composition is close to Ge{sub 2}Mn and their average diameter and spacing are 3 nm and 10 nm respectively. Magnetic measurements evidence a ferromagnetic phase up to 400 K giving rise to anomalous Hall effect at room temperature. Moreover we evidence a large positive magnetoresistance (up to 70% at 30 K and 9 T) probably due to the conductivity mismatch between the Mn-rich nano-pillars and the Mn-poor surrounding Ge matrix. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Highly compact (4F2) and well behaved nano-pillar transistor controlled resistive switching cell for neuromorphic system application.

    Science.gov (United States)

    Chen, Bing; Wang, Xinpeng; Gao, Bin; Fang, Zheng; Kang, Jinfeng; Liu, Lifeng; Liu, Xiaoyan; Lo, Guo-Qiang; Kwong, Dim-Lee

    2014-10-31

    To simplify the architecture of a neuromorphic system, it is extremely desirable to develop synaptic cells with the capacity of low operation power, high density integration, and well controlled synaptic behaviors. In this study, we develop a resistive switching device (ReRAM)-based synaptic cell, fabricated by the CMOS compatible nano-fabrication technology. The developed synaptic cell consists of one vertical gate-all-around Si nano-pillar transistor (1T) and one transition metal-oxide based resistive switching device (1R) stacked on top of the vertical transistor directly. Thanks to the vertical architecture and excellent controllability on the ON/OFF performance of the nano-pillar transistor, the 1T1R synaptic cell shows excellent characteristics such as extremely high-density integration ability with 4F(2) footprint, ultra-low operation current (<2 nA), fast switching speed (<10 ns), multilevel data storage and controllable synaptic switching, which are extremely desirable for simplifying the architecture of neuromorphic system.

  1. Fabrication of high aspect ratio nanocell lattices by ion beam irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Ishikawa, Osamu [School of Environmental Science and Technology, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502 (Japan); Nitta, Noriko, E-mail: nitta.noriko@kochi-tech.ac.jp [School of Environmental Science and Technology, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502 (Japan); Center for Nanotechnology, Research Institute, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502 (Japan); Taniwaki, Masafumi [School of Environmental Science and Technology, Kochi University of Technology, Tosayamada, Kami, Kochi 782-8502 (Japan)

    2016-11-01

    Highlights: • Nanocell lattice with a high aspect ratio on InSb semiconductor surface was fabricated by ion beam irradiation. • The fabrication technique consisting of top-down and bottom-up processes was performed in FIB. • High aspect ratio of 2 was achieved in nanocell lattice with a 100 nm interval. • The intermediate-flux irradiation is favorable for fabrication of nanocell with a high aspect ratio. - Abstract: A high aspect ratio nanocell lattice was fabricated on the InSb semiconductor surface using the migration of point defects induced by ion beam irradiation. The fabrication technique consisting of the top-down (formation of voids and holes) and bottom-up (growth of voids and holes into nanocells) processes was performed using a focused ion beam (FIB) system. A cell aspect ratio of 2 (cell height/cell diameter) was achieved for the nanocell lattice with a 100 nm dot interval The intermediate-flux ion irradiation during the bottom-up process was found to be optimal for the fabrication of a high aspect ratio nanocell.

  2. Shape matters: synthesis and biomedical applications of high aspect ratio magnetic nanomaterials.

    Science.gov (United States)

    Fratila, Raluca M; Rivera-Fernández, Sara; de la Fuente, Jesús M

    2015-05-14

    High aspect ratio magnetic nanomaterials possess anisotropic properties that make them attractive for biological applications. Their elongated shape enables multivalent interactions with receptors through the introduction of multiple targeting units on their surface, thus enhancing cell internalization. Moreover, due to their magnetic anisotropy, high aspect ratio nanomaterials can outperform their spherical analogues as contrast agents for magnetic resonance imaging (MRI) applications. In this review, we first describe the two main synthetic routes for the preparation of anisotropic magnetic nanomaterials: (i) direct synthesis (in which the anisotropic growth is directed by tuning the reaction conditions or by using templates) and (ii) assembly methods (in which the high aspect ratio is achieved by assembly from individual building blocks). We then provide an overview of the biomedical applications of anisotropic magnetic nanomaterials: magnetic separation and detection, targeted delivery and magnetic resonance imaging.

  3. Synthesis of high aspect ratio ZnO nanowires with an inexpensive handcrafted electrochemical setup

    Science.gov (United States)

    Taheri, Ali; Saramad, Shahyar; Setayeshi, Saeed

    2016-12-01

    In this work, high aspect ratio zinc oxide nanowires are synthesized using templated one-step electrodeposition technique. Electrodeposition of the nanowires is done using a handcrafted electronic system. Nuclear track-etched polycarbonate membrane is used as a template to form the high aspect ratio nanowires. The result of X-ray diffraction and scanning electron microscopy shows that nanowires with a good crystallinity and an aspect ratio of more than 30 can be achieved in a suitable condition. The height of electrodeposited nanowires reaches to about 11 μm. Based on the obtained results, high aspect ratio ZnO nanowires can be formed using inexpensive electrodeposition setup with an acceptable quality.

  4. Development of high-aspect-ratio microchannel heat exchanger based on multi-tool milling process

    Institute of Scientific and Technical Information of China (English)

    潘敏强; 李金恒; 汤勇

    2008-01-01

    A high-aspect-ratio microchannel heat exchanger based on multi-tool milling process was developed. Several slotting cutters were stacked together for simultaneously machining several high-aspect-ratio microchannels with manifold structures. On the basis of multi-tool milling process, the structural design of the manifold side height, microchannel length, width, number, and interval were analyzed. The heat transfer performances of high-aspect-ratio microchannel heat exchangers with two different manifolds were investigated by experiments, and the influencing factors were analyzed. The results indicate that the magnitude of heat transfer area per unit volume dominates the heat transfer performances of plate-type micro heat exchanger, while the velocity distribution between microchannels has little effects on the heat transfer performances.

  5. Shape matters: synthesis and biomedical applications of high aspect ratio magnetic nanomaterials

    Science.gov (United States)

    Fratila, Raluca M.; Rivera-Fernández, Sara; de La Fuente, Jesús M.

    2015-04-01

    High aspect ratio magnetic nanomaterials possess anisotropic properties that make them attractive for biological applications. Their elongated shape enables multivalent interactions with receptors through the introduction of multiple targeting units on their surface, thus enhancing cell internalization. Moreover, due to their magnetic anisotropy, high aspect ratio nanomaterials can outperform their spherical analogues as contrast agents for magnetic resonance imaging (MRI) applications. In this review, we first describe the two main synthetic routes for the preparation of anisotropic magnetic nanomaterials: (i) direct synthesis (in which the anisotropic growth is directed by tuning the reaction conditions or by using templates) and (ii) assembly methods (in which the high aspect ratio is achieved by assembly from individual building blocks). We then provide an overview of the biomedical applications of anisotropic magnetic nanomaterials: magnetic separation and detection, targeted delivery and magnetic resonance imaging.

  6. Etching high aspect ratio structures in silicon using sulfur hexafluoride/oxygen plasma

    Science.gov (United States)

    Belen, Rodolfo Jun

    Plasma etching of high aspect ratio structures in Si is an important step in manufacturing capacitors for memory devices and integrated components of microelectromechanical systems. In these applications, the goal is to etch deep features anisotropically with high etch rates and selectivities to the mask while maintaining good uniformity and reproducibility. This study investigates the etching of deep sub-half-micron diameter holes in Si using SF6/O 2 plasma. Etching experiments and plasma diagnostics are combined with modeling to gain a fundamental understanding of the etching and passivation kinetics and mechanism necessary in developing and scaling-up processes. Etching experiments are conducted in an inductively coupled plasma reactor with a planar coil. The substrate electrode is biased with a separate rf power supply to achieve independent control of the ion flux and energy. The effects of pressure, rf-bias and SF6-to-O2 ratio in the feed gas on the etch rate, selectivity and feature profile shape are studied using Si wafers patterned with 0.35 mum-diameter holes in a SiO2 mask. Visualization of profiles using scanning electron microscopy is complemented by plasma diagnostics such as mass spectrometry and actinometry. Simultaneous with experiments, reactor-scale and feature-scale models are developed to quantify the etching and passivation kinetics and identify the important kinetic parameters that affect feature profile evolution. Information from plasma diagnostics and previously published data are used to reduce the degrees of freedom in the model. Experiments are designed to directly measure kinetic parameters such as the chemical etch rate constant and the incidence angle dependence of the etching yield. Experimentally inaccessible parameters such as the sticking coefficients, etching yield and ion scattering parameters are determined through feature profile simulation. The key internal plasma parameters that affect profile evolution are the F-to-O and F

  7. Fabrication of high aspect ratio nanogrid transparent electrodes via capillary assembly of Ag nanoparticles

    Science.gov (United States)

    Kang, Juhoon; Park, Chang-Goo; Lee, Su-Han; Cho, Changsoon; Choi, Dae-Geun; Lee, Jung-Yong

    2016-05-01

    In this report, we describe the fabrication of periodic Ag nanogrid electrodes by capillary assembly of silver nanoparticles (AgNPs) along patterned nanogrid templates. By assembling the AgNPs into these high-aspect-ratio nanogrid patterns, we can obtain high-aspect-ratio nanogratings, which can overcome the inherent trade-off between the optical transmittance and the sheet resistance of transparent electrodes. The junction resistance between the AgNPs is effectively reduced by photochemical welding and post-annealing. The fabricated high-aspect-ratio nanogrid structure with a line width of 150 nm and a height of 450 nm has a sheet resistance of 15.2 Ω sq-1 and an optical transmittance of 85.4%.In this report, we describe the fabrication of periodic Ag nanogrid electrodes by capillary assembly of silver nanoparticles (AgNPs) along patterned nanogrid templates. By assembling the AgNPs into these high-aspect-ratio nanogrid patterns, we can obtain high-aspect-ratio nanogratings, which can overcome the inherent trade-off between the optical transmittance and the sheet resistance of transparent electrodes. The junction resistance between the AgNPs is effectively reduced by photochemical welding and post-annealing. The fabricated high-aspect-ratio nanogrid structure with a line width of 150 nm and a height of 450 nm has a sheet resistance of 15.2 Ω sq-1 and an optical transmittance of 85.4%. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01896c

  8. Physical Delivery of Macromolecules using High-Aspect Ratio Nanostructured Materials.

    Science.gov (United States)

    Lee, Kunwoo; Lingampalli, Nithya; Pisano, Albert P; Murthy, Niren; So, Hongyun

    2015-10-28

    There is great need for the development of an efficient delivery method of macromolecules, including nucleic acids, proteins, and peptides, to cell cytoplasm without eliciting toxicity or changing cell behavior. High-aspect ratio nanomaterials have addressed many challenges present in conventional methods, such as cell membrane passage and endosomal degradation, and have shown the feasibility of efficient high-throughput macromolecule delivery with minimal perturbation of cells. This review describes the recent advances of in vitro and in vivo physical macromolecule delivery with high-aspect ratio nanostructured materials and summarizes the synthesis methods, material properties, relevant applications, and various potential directions.

  9. Modeling and characterization of dielectrophoretically structured piezoelectric composites using piezoceramic particle inclusions with high aspect ratios

    NARCIS (Netherlands)

    Ende, D.A. van den; Maier, R.A.; Neer, P.L.M.J. van; Zwaag, S. van der; Randall, C.A.; Groen, W.A.

    2013-01-01

    In this work, the piezoelectric properties at high electric fields of dielectrophoretically aligned PZT - polymer composites containing high aspect ratio particles (such as short fibers) are presented. Polarization and strain as a function of electric field are evaluated. The properties of the compo

  10. Improving surface acousto-optical interaction by high aspect ratio electrodes

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Laude, Vincent; Khelif, Abdelkrim

    2009-01-01

    The acousto-optical interaction of an optical wave confined inside a waveguide and a surface acoustic wave launched by an interdigital transducer (IDT) at the surface of a piezoelectric material is considered. The IDT with high aspect ratio electrodes supports several acoustic modes that are stro...

  11. Dense high-aspect ratio 3D carbon pillars on interdigitated microelectrode arrays

    DEFF Research Database (Denmark)

    Amato, Letizia; Heiskanen, Arto; Hansen, Rasmus

    2015-01-01

    In this work we present high-aspect ratio carbon pillars (1.4 μm in diameter and ∼11 μm in height) on top of interdigitated electrode arrays to be used for electrochemical applications. For this purpose, different types of 2D and 3D pyrolysed carbon structures were fabricated and characterised...

  12. Thermo-mechanical properties of high aspect ratio silica nanofiber filled epoxy composites

    Science.gov (United States)

    Ren, Liyun

    The optimization of thermo-mechanical properties of polymer composites at low filler loadings is of great interest in both engineering and scientific fields. There have been several studies on high aspect ratio fillers as novel reinforcement phase for polymeric materials. However, facile synthesis method of high aspect ratio nanofillers is limited. In this study, a scalable synthesis method of high aspect ratio silica nanofibers is going to be presented. I will also demonstrate that the inclusion of high aspect ratio silica nanofibers in epoxy results in a significant improvement of epoxy thermo-mechanical properties at low filler loadings. With silica nanofiber concentration of 2.8% by volume, the Young's modulus, ultimate tensile strength and fracture toughness of epoxy increased ~23, ~28 and ~50%, respectively, compared to unfilled epoxy. At silica nanofiber volume concentration of 8.77%, the thermal expansion coefficient decreased by ˜40% and the thermal conductivity was improved by ˜95% at room temperature. In the current study, the influence of nano-sized silica filler aspect ratio on mechanical and thermal behavior of epoxy nanocomposites were studied by comparing silica nanofibers to spherical silica nanoparticles (with aspect ratio of one) at various filler loadings. The significant reinforcement of composite stiffness is attributed to the variation of the local stress state in epoxy due to the high aspect ratio of the silica nanofiber and the introduction of a tremendous amount of interfacial area between the nanofillers and the epoxy matrix. The fracture mechanisms of silica nanofiber filled epoxy were also investigated. The existence of high aspect ratio silica nanofiber promotes fracture energy dissipation by crack deflection, crack pinning as well as debonding with fiber pull-out leading to enhanced fracture toughness. High aspect ratio fillers also provide significant reduction of photon scattering due to formation of a continuous fiber network

  13. A 3-dimensional in vitro model of epithelioid granulomas induced by high aspect ratio nanomaterials

    Directory of Open Access Journals (Sweden)

    Hurt Robert H

    2011-05-01

    Full Text Available Abstract Background The most common causes of granulomatous inflammation are persistent pathogens and poorly-degradable irritating materials. A characteristic pathological reaction to intratracheal instillation, pharyngeal aspiration, or inhalation of carbon nanotubes is formation of epithelioid granulomas accompanied by interstitial fibrosis in the lungs. In the mesothelium, a similar response is induced by high aspect ratio nanomaterials, including asbestos fibers, following intraperitoneal injection. This asbestos-like behaviour of some engineered nanomaterials is a concern for their potential adverse health effects in the lungs and mesothelium. We hypothesize that high aspect ratio nanomaterials will induce epithelioid granulomas in nonadherent macrophages in 3D cultures. Results Carbon black particles (Printex 90 and crocidolite asbestos fibers were used as well-characterized reference materials and compared with three commercial samples of multiwalled carbon nanotubes (MWCNTs. Doses were identified in 2D and 3D cultures in order to minimize acute toxicity and to reflect realistic occupational exposures in humans and in previous inhalation studies in rodents. Under serum-free conditions, exposure of nonadherent primary murine bone marrow-derived macrophages to 0.5 μg/ml (0.38 μg/cm2 of crocidolite asbestos fibers or MWCNTs, but not carbon black, induced macrophage differentiation into epithelioid cells and formation of stable aggregates with the characteristic morphology of granulomas. Formation of multinucleated giant cells was also induced by asbestos fibers or MWCNTs in this 3D in vitro model. After 7-14 days, macrophages exposed to high aspect ratio nanomaterials co-expressed proinflammatory (M1 as well as profibrotic (M2 phenotypic markers. Conclusions Induction of epithelioid granulomas appears to correlate with high aspect ratio and complex 3D structure of carbon nanotubes, not with their iron content or surface area. This model

  14. Electrolytic Manganese Dioxide Coatings on High Aspect Ratio Micro-Pillar Arrays for 3D Thin Film Lithium Ion Batteries

    Directory of Open Access Journals (Sweden)

    Yafa Zargouni

    2017-05-01

    Full Text Available In this work, we present the electrochemical deposition of manganese dioxide (MnO2 thin films on carbon-coated TiN/Si micro-pillars. The carbon buffer layer, grown by plasma enhanced chemical vapor deposition (PECVD, is used as a protective coating for the underlying TiN current collector from oxidation, during the film deposition, while improving the electrical conductivity of the stack. A conformal electrolytic MnO2 (EMD coating is successfully achieved on high aspect ratio C/TiN/Si pillar arrays by tailoring the deposition process. Lithiation/Delithiation cycling tests have been performed. Reversible insertion and extraction of Li+ through EMD structure are observed. The fabricated stack is thus considered as a good candidate not only for 3D micorbatteries but also for other energy storage applications.

  15. A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias.

    Science.gov (United States)

    Lisker, Marco; Marschmeyer, Steffen; Kaynak, Mehmet; Tekin, Ibrahim

    2011-09-01

    The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 microm depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

  16. Different methods to alter surface morphology of high aspect ratio structures

    Energy Technology Data Exchange (ETDEWEB)

    Leber, M., E-mail: moritz.leber@utah.edu [Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT (United States); Shandhi, M.M.H. [Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT (United States); Hogan, A. [Blackrock Microsystems, Salt Lake City, UT (United States); Solzbacher, F. [Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT (United States); Bhandari, R.; Negi, S. [Department of Electrical and Computer Engineering, University of Utah, Salt Lake City, UT (United States); Blackrock Microsystems, Salt Lake City, UT (United States)

    2016-03-01

    Graphical abstract: Surface engineering of high aspect ratio silicon structures. - Highlights: • Multiple roughening techniques for high aspect ratio devices were investigated. • Modification of surface morphology of high aspect ratio silicon devices (1:15). • Decrease of 76% in impedance proves significant increase in surface area. - Abstract: In various applications such as neural prostheses or solar cells, there is a need to alter the surface morphology of high aspect ratio structures so that the real surface area is greater than geometrical area. The change in surface morphology enhances the devices functionality. One of the applications of altering the surface morphology is of neural implants such as the Utah electrode array (UEA) that communicate with single neurons by charge injection induced stimulation or by recording electrical neural signals. For high selectivity between single cells of the nervous system, the electrode surface area is required to be as small as possible, while the impedance is required to be as low as possible for good signal to noise ratios (SNR) during neural recording. For stimulation, high charge injection and charge transfer capacities of the electrodes are required, which increase with the electrode surface. Traditionally, researchers have worked with either increasing the roughness of the existing metallization (platinum grey, black) or other materials such as Iridium Oxide and PEDOT. All of these previously investigated methods lead to more complicated metal deposition processes that are difficult to control and often have a critical impact on the mechanical properties of the metal films. Therefore, a modification of the surface underneath the electrode's coating will increase its surface area while maintaining the standard and well controlled metal deposition process. In this work, the surfaces of the silicon micro-needles were engineered by creating a defined microstructure on the electrodes surface using several

  17. An implicit wetting and drying approach for non-hydrostatic flows in high aspect ratio domains

    CERN Document Server

    Candy, Adam S

    2013-01-01

    A wetting and drying approach for free surface flows governed by the three-dimensional, non-hydrostatic Navier-Stokes equations in high aspect ratio domains is developed. This has application in the modelling of inundation processes in geophysical domains, where dynamics takes place over a large horizontal extent relative to vertical resolution, such as in the evolution of a tsunami, or an urban fluvial flooding scenario. The approach is novel in that it solves for three dimensional dynamics in these very high aspect ratio domains, to include non-hydrostatic effects and accurately model dispersive processes. These become important in shallow regions with steep gradients, a particularly acute problem where man-made structures exist such as buildings or flood defences in an urban environment. It is implicit in time to allow efficient time integration over a range of mesh element sizes. Specific regularisation methods are introduced to improve conditioning of the full three-dimensional pressure Poisson problem i...

  18. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

    Science.gov (United States)

    Li, Ting

    2013-08-13

    The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

  19. Patterned growth of high aspect ratio silicon wire arrays at moderate temperature

    Science.gov (United States)

    Morin, Christine; Kohen, David; Tileli, Vasiliki; Faucherand, Pascal; Levis, Michel; Brioude, Arnaud; Salem, Bassem; Baron, Thierry; Perraud, Simon

    2011-04-01

    High aspect ratio silicon wire arrays with excellent pattern fidelity over wafer-scale area were grown by chemical vapor deposition at moderate temperature, using a gas mixture of silane and hydrogen chloride. An innovative two-step process was developed for in situ doping of silicon wires by diborane. This process led to high p-type doping levels, up to 10 18-10 19 cm -3, without degradation of the silicon wire array pattern fidelity.

  20. A review on non-linear aeroelasticity of high aspect-ratio wings

    Science.gov (United States)

    Afonso, Frederico; Vale, José; Oliveira, Éder; Lau, Fernando; Suleman, Afzal

    2017-02-01

    Current economic constraints and environmental regulations call for design of more efficient aircraft configurations. An observed trend in aircraft design to reduce the lift induced drag and improve fuel consumption and emissions is to increase the wing aspect-ratio. However, a slender wing is more flexible and subject to higher deflections under the same operating conditions. This effect may lead to changes in dynamic behaviour and in aeroelastic response, potentially resulting in instabilities. Therefore, it is important to take into account geometric non-linearities in the design of high aspect-ratio wings, as well as having accurate computational codes that couple the aerodynamic and structural models in the presence of non-linearities. Here, a review on the state-of-the-art on non-linear aeroelasticity of high aspect-ratio wings is presented. The methodologies employed to analyse high aspect-ratio wings are presented and their applications discussed. Important observations from the state-of-the-art studies are drawn and the current challenges in the field are identified.

  1. Flight Loads Prediction of High Aspect Ratio Wing Aircraft Using Multibody Dynamics

    Directory of Open Access Journals (Sweden)

    Michele Castellani

    2016-01-01

    Full Text Available A framework based on multibody dynamics has been developed for the static and dynamic aeroelastic analyses of flexible high aspect ratio wing aircraft subject to structural geometric nonlinearities. Multibody dynamics allows kinematic nonlinearities and nonlinear relationships in the forces definition and is an efficient and promising methodology to model high aspect ratio wings, which are known to be prone to structural nonlinear effects because of the high deflections in flight. The multibody dynamics framework developed employs quasi-steady aerodynamics strip theory and discretizes the wing as a series of rigid bodies interconnected by beam elements, representative of the stiffness distribution, which can undergo arbitrarily large displacements and rotations. The method is applied to a flexible high aspect ratio wing commercial aircraft and both trim and gust response analyses are performed in order to calculate flight loads. These results are then compared to those obtained with the standard linear aeroelastic approach provided by the Finite Element Solver Nastran. Nonlinear effects come into play mainly because of the need of taking into account the large deflections of the wing for flight loads computation and of considering the aerodynamic forces as follower forces.

  2. Fabrication of Aspheric Micro-Lens Mold with High Aspect Ratio

    Science.gov (United States)

    Naniwa, Irizo; Kanamaru, Masatoshi; Nakamura, Shigeo; Shimano, Takeshi; Horino, Masaya

    The optical pickup of our Small-Form-Factor Optical Disc Drives (SFFODDs) requires a micro-objective whose profile is composed of two aspheric surfaces. However, it is difficult to fabricate a micro-objective with an arbitrary aspheric surface and high aspect ratio using conventional techniques. We propose here a new method to fabricate an aspheric micro-lens mold with high aspect ratio. This method uses the micro-loading effect in Deep Reactive Ion Etching (DRIE) and isotropic Reactive Ion Etching (RIE). The micro-loading effect is a phenomenon that leads to different etching depths depending on the aperture size of the mask layer used in etching. We fabricated an aspheric micro-lens mold for the prototype by using the proposed method after experimental evaluations of the micro-loading effect for a feasibility study. The profile of the first prototype was slightly different from the designed one according as the distance from the lens center increase. The profile error of the second prototype was reduced by using a mask that had multiple apertures with the smallest aperture located outside the area where the crater was formed. Our proposed method was found to be effective for fabricating a micro-lens mold with an arbitrary aspheric surface and high aspect ratio.

  3. Growth of high aspect ratio ZnO nanorods by solution process: Effect of polyethyleneimine

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Han-Seok; Vaseem, Mohammad; Kim, Sang Gon; Im, Yeon-Ho [School of Semiconductor and Chemical Engineering, Dept. of BIN Fusion Technology, BK 21 Centre for Future Energy Materials and Devices, and Nanomaterials Processing Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of); Hahn, Yoon-Bong, E-mail: ybhahn@chonbuk.ac.kr [School of Semiconductor and Chemical Engineering, Dept. of BIN Fusion Technology, BK 21 Centre for Future Energy Materials and Devices, and Nanomaterials Processing Research Center, Chonbuk National University, Jeonju 561-756 (Korea, Republic of)

    2012-05-15

    High aspect ratio ZnO nanorods were grown vertically on ZnO seed layer deposited silicon, glass and polyimide substrates by a solution process at low-temperature using zinc nitrate hexahydrate and hexamethylenetetramine. We studied the effect of polyethlyeneimine (PEI) on the growth of ZnO nanorods. It was found that PEI has a prominent effect on controlling the aspect ratio of ZnO nanorods in solution. The morphological and photoluminescence properties of the ZnO nanorods were also examined with varying the growth temperature (60-90 Degree-Sign C). - Graphical abstract: With addition of polyehyleneimine (PEI) high aspect-ratio ZnO nanorods were grown. It is believed that during ZnO nanorods growth, protonized form of linear PEI molecules inhibits the lateral growth by being adsorbed on non-polar lateral planes. Thus the vertical growth is favored. Highlights: Black-Right-Pointing-Pointer A controlled growth of high aspect ratio ZnO nanorods on different substrates. Black-Right-Pointing-Pointer A prominent effect of polyethlyeneimine (PEI) on controlling the aspect ratio of ZnO nanorods in solution. Black-Right-Pointing-Pointer Precursor concentration and growth temperature effect for various aspect ratio ZnO nanorods.

  4. Flow visualization study in high aspect ratio cooling channels for rocket engines

    Science.gov (United States)

    Meyer, Michael L.; Giuliani, James E.

    1993-11-01

    The structural integrity of high pressure liquid propellant rocket engine thrust chambers is typically maintained through regenerative cooling. The coolant flows through passages formed either by constructing the chamber liner from tubes or by milling channels in a solid liner. Recently, Carlile and Quentmeyer showed life extending advantages (by lowering hot gas wall temperatures) of milling channels with larger height to width aspect ratios (AR is greater than 4) than the traditional, approximately square cross section, passages. Further, the total coolant pressure drop in the thrust chamber could also be reduced, resulting in lower turbomachinery power requirements. High aspect ratio cooling channels could offer many benefits to designers developing new high performance engines, such as the European Vulcain engine (which uses an aspect ratio up to 9). With platelet manufacturing technology, channel aspect ratios up to 15 could be formed offering potentially greater benefits. Some issues still exist with the high aspect ratio coolant channels. In a coolant passage of circular or square cross section, strong secondary vortices develop as the fluid passes through the curved throat region. These vortices mix the fluid and bring lower temperature coolant to the hot wall. Typically, the circulation enhances the heat transfer at the hot gas wall by about 40 percent over a straight channel. The effect that increasing channel aspect ratio has on the curvature heat transfer enhancement has not been sufficiently studied. If the increase in aspect ratio degrades the secondary flow, the fluid mixing will be reduced. Analysis has shown that reduced coolant mixing will result in significantly higher wall temperatures, due to thermal stratification in the coolant, thus decreasing the benefits of the high aspect ratio geometry. A better understanding of the fundamental flow phenomena in high aspect ratio channels with curvature is needed to fully evaluate the benefits of this

  5. Nanometer scale high-aspect-ratio trench etching at controllable angles using ballistic reactive ion etching

    Energy Technology Data Exchange (ETDEWEB)

    Cybart, Shane; Roediger, Peter; Ulin-Avila, Erick; Wu, Stephen; Wong, Travis; Dynes, Robert

    2012-11-30

    We demonstrate a low pressure reactive ion etching process capable of patterning nanometer scale angled sidewalls and three dimensional structures in photoresist. At low pressure the plasma has a large dark space region where the etchant ions have very large highly-directional mean free paths. Mounting the sample entirely within this dark space allows for etching at angles relative to the cathode with minimal undercutting, resulting in high-aspect ratio nanometer scale angled features. By reversing the initial angle and performing a second etch we create three-dimensional mask profiles.

  6. Design and Analyses of High Aspect Ratio Nozzles for Distributed Propulsion Acoustic Measurements

    Science.gov (United States)

    Dippold, Vance F., III

    2016-01-01

    A series of three convergent round-to-rectangular high-aspect ratio nozzles were designed for acoustics measurements. The nozzles have exit area aspect ratios of 8:1, 12:1, and 16:1. With septa inserts, these nozzles will mimic an array of distributed propulsion system nozzles, as found on hybrid wing-body aircraft concepts. Analyses were performed for the three nozzle designs and showed that the flow through the nozzles was free of separated flow and shocks. The exit flow was mostly uniform with the exception of a pair of vortices at each span-wise end of the nozzle.

  7. Proton beam writing and electroplating for the fabrication of high aspect ratio Au microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Yue Weisheng [Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Ren Yaping [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Kan, Jeroen Anton van; Chiam, S.-Y. [Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Jian, Linke; Moser, Herbert O. [Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore 117603 (Singapore); Osipowicz, Thomas [Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542 (Singapore)], E-mail: phyto@nus.edu.sg; Watt, Frank [Centre for Ion Beam Applications, Department of Physics, National University of Singapore, Singapore 117542 (Singapore)

    2009-07-01

    We present an approach to fabricate tall high aspect ratio Au microstructures by means of proton beam direct writing. Combining proton beam direct writing and electroplating, we successfully produced gold structures with sub-micrometer lateral dimensions, structure heights in excess of 11 {mu}m, and aspect ratios over 28. Sidewall quality of the Au structures was improved by lowering the process temperature to 20 deg. C when developing PMMA patterns with GG developer. The application of such structures as X-ray masks for deep X-ray lithography with synchrotron radiation was demonstrated.

  8. Fabrication of High Aspect Ratio SU-8 Structures for Integrated Spectrometers

    DEFF Research Database (Denmark)

    Anhøj, Thomas Aarøe

    2007-01-01

    of photolithography. Successful fabrication of re ection gratings requires a high degree of precision in the photolithographic process. The fabrication process has thus been optimized by optimizing the photolithographic process for fabrication of high aspect ratio structures, i.e. structures with details...... that are small compared to the height of the structure. A decisive factor is the ability of the process to separate closely- spaced structures. The primary measure of quality is thus the aspect ratio of the narrowest trench which it is possible to resolve in the lithographic process. The optimization...

  9. Aqueous solution route to high-aspect-ratio zinc oxide nanostructures on indium tin oxide substrates.

    Science.gov (United States)

    Ku, Chen-Hao; Wu, Jih-Jen

    2006-07-06

    High-aspect-ratio ZnO nanowires and nanotubes are formed on indium tin oxide (ITO) substrates using a three-step route at low temperatures. The three steps, including successive ionic layer absorption and reaction (SILAR) deposition of the ZnO seed layer, hydrothermal annealing of the seed layer, and chemical bath deposition (CBD) of the one-dimensional (1D) ZnO nanostructures, are all conducted in aqueous solutions at temperatures below 120 degrees C. Both the hydrothermal annealing of the SILAR seed layer and the low-concentration precursor solution employed in the CBD process are crucial in order to synthesize the uniform and high-aspect-ratio ZnO nanostructures on the ITO substrate. TEM analyses reveal that both the nanowire and the nanotube possess the single-crystal structure and are grown along [001] direction. Room-temperature cathodoluminescence spectrum of the 1D ZnO nanostructures shows a sharp ultraviolet emission at 375 nm and a broad green-band emission.

  10. High aspect ratio MEMS capacitor for high frequency impedance matching applications

    DEFF Research Database (Denmark)

    Yalcinkaya, Arda Deniz; Jensen, Søren; Hansen, Ole

    2003-01-01

    We present a microelectromechanical tunable capacitor with a low control voltage, a wide tuning range and adequate electrical quality factor. The device is fabricated in a single-crystalline silicon layer using deep reactive ion etching (DRIE) for obtaining high-aspect ratio (> 20) parallel comb-...... response and it was found that the device is a suitable passive component to be used in impedance matching applications, band-pass filtering or voltage controlled oscillators in the Very High Frequency (VHF) and Ultra High Frequency (UHF) bands.......We present a microelectromechanical tunable capacitor with a low control voltage, a wide tuning range and adequate electrical quality factor. The device is fabricated in a single-crystalline silicon layer using deep reactive ion etching (DRIE) for obtaining high-aspect ratio (> 20) parallel comb......-drive structures with vertical sidewalls. The process sequence for fabrication of the devices uses only one lithographic masking step and can be completed in a short time. The fabricated device was characterized with respect to electrical quality factor, tuning range, self-resonance frequency and transient...

  11. Simulation and Measurement of Neuroelectrodes' Characteristics with Integrated High Aspect Ratio Nano Structures

    Directory of Open Access Journals (Sweden)

    Christoph Nick

    2015-07-01

    Full Text Available Improving the interface between electrodes and neurons has been the focus of research for the last decade. Neuroelectrodes should show small geometrical surface area and low impedance for measuring and high charge injection capacities for stimulation. Increasing the electrochemically active surface area by using nanoporous electrode material or by integrating nanostructures onto planar electrodes is a common approach to improve this interface. In this paper a simulation approach for neuro electrodes' characteristics with integrated high aspect ratio nano structures based on a point-contact-model is presented. The results are compared with experimental findings conducted with real nanostructured microelectrodes. In particular, effects of carbon nanotubes and gold nanowires integrated onto microelectrodes are described. Simulated and measured impedance properties are presented and its effects onto the transfer function between the neural membrane potential and the amplifier output signal are studied based on the point-contact-model. Simulations show, in good agreement with experimental results, that electrode impedances can be dramatically reduced by the integration of high aspect ratio nanostructures such as gold nanowires and carbon nanotubes. This lowers thermal noise and improves the signal-to-noise ratio for measuring electrodes. It also may increase the adhesion of cells to the substrate and thus increase measurable signal amplitudes.

  12. Combined AFM nano-machining and reactive ion etching to fabricate high aspect ratio structures.

    Science.gov (United States)

    Peng, Ping; Shi, Tielin; Liao, Guanglan; Tang, Zirong

    2010-11-01

    In this paper, a new combined method of sub-micron high aspect ratio structure fabrication is developed which can be used for production of nano imprint template. The process includes atomic force microscope (AFM) scratch nano-machining and reactive ion etching (RIE) fabrication. First, 40 nm aluminum film was deposited on the silicon substrate by magnetron sputtering, and then sub-micron grooves were fabricated on the aluminum film by nano scratch using AFM diamond tip. As aluminum film is a good mask for etching silicon, high aspect ratio structures were finally fabricated by RIE process. The fabricated structures were studied by SEM, which shows that the grooves are about 400 nm in width and 5 microm in depth. To obtain sub-micron scale groove structures on the aluminum film, experiments of nanomachining on aluminum films under various machining conditions were conducted. The depths of the grooves fabricated using different scratch loads were also studied by the AFM. The result shows that the material properties of the film/substrate are elastic-plastic following nearly a bilinear law with isotropic strain hardening. Combined AFM nanomachining and RIE process provides a relative lower cost nano fabrication technique than traditional e-beam lithography, and it has a good prospect in nano imprint template fabrication.

  13. Planarization of High Aspect Ratio P-I-N Diode Pillar Arrays for Blanket Electrical Contacts

    Energy Technology Data Exchange (ETDEWEB)

    Voss, L F; Shao, Q; Reinhardt, C E; Graff, R T; Conway, A M; Nikolic, R J; Deo, N; Cheung, C L

    2009-03-05

    Two planarization techniques for high aspect ratio three dimensional pillar structured P-I-N diodes have been developed in order to enable a continuous coating of metal on the top of the structures. The first technique allows for coating of structures with topography through the use of a planarizing photoresist followed by RIE etch back to expose the tops of the pillar structure. The second technique also utilizes photoresist, but instead allows for planarization of a structure in which the pillars are filled and coated with a conformal coating by matching the etch rate of the photoresist to the underlying layers. These techniques enable deposition using either sputtering or electron beam evaporation of metal films to allow for electrical contact to the tops of the underlying pillar structure. These processes have potential applications for many devices comprised of 3-D high aspect ratio structures. Two separate processes have been developed in order to ensure a uniform surface for deposition of an electrode on the {sup 10}Boron filled P-I-N pillar structured diodes. Each uses S1518 photoresist in order to achieve a relatively uniform surface despite the non-uniformity of the underlying detector. Both processes allow for metallization of the final structure and provide good electrical continuity over a 3D pillar structure.

  14. Diffusion of dilute gas in arrays of randomly distributed, vertically aligned, high-aspect-ratio cylinders

    Science.gov (United States)

    Guerra, Carlos

    2017-01-01

    In this work we modelled the diffusive transport of a dilute gas along arrays of randomly distributed, vertically aligned nanocylinders (nanotubes or nanowires) as opposed to gas diffusion in long pores, which is described by the well-known Knudsen theory. Analytical expressions for (i) the gas diffusion coefficient inside such arrays, (ii) the time between collisions of molecules with the nanocylinder walls (mean time of flight), (iii) the surface impingement rate, and (iv) the Knudsen number of such a system were rigidly derived based on a random-walk model of a molecule that undergoes memoryless, diffusive reflections from nanocylinder walls assuming the molecular regime of gas transport. It can be specifically shown that the gas diffusion coefficient inside such arrays is inversely proportional to the areal density of cylinders and their mean diameter. An example calculation of a diffusion coefficient is delivered for a system of titanium isopropoxide molecules diffusing between vertically aligned carbon nanotubes. Our findings are important for the correct modelling and optimisation of gas-based deposition techniques, such as atomic layer deposition or chemical vapour deposition, frequently used for surface functionalisation of high-aspect-ratio nanocylinder arrays in solar cells and energy storage applications. Furthermore, gas sensing devices with high-aspect-ratio nanocylinder arrays and the growth of vertically aligned carbon nanotubes need the fundamental understanding and precise modelling of gas transport to optimise such processes. PMID:28144565

  15. Characterization of the optical parameters of high aspect ratio polymer micro-optical components

    Science.gov (United States)

    Krajewski, Rafal; Van Erps, Jurgen; Wissmann, Markus; Kujawinska, Malgorzata; Parriaux, Olivier; Tonchev, S.; Mohr, Jurgen; Thienpont, Hugo

    2008-04-01

    Over the last decades the significant grow of interest of photonics devices is observed in various fields of applications. Due to the market demands, the current research studies are focused on the technologies providing miniaturized, reliable low-cost micro-optical systems, particularly the ones featuring the fabrication of high aspect ratio structures. A high potential of these technologies comes from the fact that fabrication process is not limited to single optical components, but entire systems integrating sets of elements could be fabricated. This could in turn result in a significant saving on the assembly and packaging costs. We present a brief overview of the most common high aspect ratio fabrication technologies for micro-optical components followed by some characterization studies of these techniques. The sidewall quality and internal homogeneity will be considered as the most crucial parameters, having an impact on the wavefront propagation in the fabricated components. We show the characterization procedure and measurement results for components prototyped with Deep Proton Writing and glass micromachining technology replicated with Hot Embossing and Elastomeric Mould Vacuum Casting technology. We discuss the pros and cons for using these technologies for the production of miniaturized interferometers blocks. In this paper we present the status of our research on the new technology chain and we show the concept of microinterferometers to be fabricated within presented technology chain.

  16. High aspect ratio tungsten grating on ultrathin Si membranes for extreme UV lithography

    Science.gov (United States)

    Peng, Xinsheng; Ying, Yulong

    2016-09-01

    Extreme ultraviolet lithography is one of the modern lithography tools for high-volume manufacturing with 22 nm resolution and beyond. But critical challenges exist to the design and fabrication of large-scale and highly efficient diffraction transmission gratings, significantly reducing the feature sizes down to 22 nm and beyond. To achieve such a grating, the surface flatness, the line edge roughness, the transmission efficiency and aspect ratio should be improved significantly. Delachat et al (2015 Nanotechnology 26 108262) develop a full process to fabricate a tungsten diffraction grating on an ultrathin silicon membrane with higher aspect ratio up to 8.75 that met all the aforementioned requirements for extreme ultraviolet lithography. This process is fully compatible with standard industrial extreme ultraviolet lithography.

  17. High aspect ratio tungsten grating on ultrathin Si membranes for extreme UV lithography.

    Science.gov (United States)

    Peng, Xinsheng; Ying, Yulong

    2016-09-02

    Extreme ultraviolet lithography is one of the modern lithography tools for high-volume manufacturing with 22 nm resolution and beyond. But critical challenges exist to the design and fabrication of large-scale and highly efficient diffraction transmission gratings, significantly reducing the feature sizes down to 22 nm and beyond. To achieve such a grating, the surface flatness, the line edge roughness, the transmission efficiency and aspect ratio should be improved significantly. Delachat et al (2015 Nanotechnology 26 108262) develop a full process to fabricate a tungsten diffraction grating on an ultrathin silicon membrane with higher aspect ratio up to 8.75 that met all the aforementioned requirements for extreme ultraviolet lithography. This process is fully compatible with standard industrial extreme ultraviolet lithography.

  18. Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias.

    Science.gov (United States)

    He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

    2017-01-18

    Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs.

  19. Tailoring femtosecond 1.5-μm Bessel beams for manufacturing high-aspect-ratio through-silicon vias

    Science.gov (United States)

    He, Fei; Yu, Junjie; Tan, Yuanxin; Chu, Wei; Zhou, Changhe; Cheng, Ya; Sugioka, Koji

    2017-01-01

    Three-dimensional integrated circuits (3D ICs) are an attractive replacement for conventional 2D ICs as high-performance, low-power-consumption, and small-footprint microelectronic devices. However, one of the major remaining challenges is the manufacture of high-aspect-ratio through-silicon vias (TSVs), which is a crucial technology for the assembly of 3D Si ICs. Here, we present the fabrication of high-quality TSVs using a femtosecond (fs) 1.5-μm Bessel beam. To eliminate the severe ablation caused by the sidelobes of a conventional Bessel beam, a fs Bessel beam is tailored using a specially designed binary phase plate. We demonstrate that the tailored fs Bessel beam can be used to fabricate a 2D array of approximately ∅10-μm TSVs on a 100-μm-thick Si substrate without any sidelobe damage, suggesting potential application in the 3D assembly of 3D Si ICs. PMID:28098250

  20. Engineered high aspect ratio vertical nanotubes as a model system for the investigation of catalytic methanol synthesis over Cu/ZnO.

    Science.gov (United States)

    Güder, Firat; Frei, Elias; Kücükbayrak, Umut M; Menzel, Andreas; Thomann, Ralf; Luptak, Roman; Hollaender, Bernd; Krossing, Ingo; Zacharias, Margit

    2014-02-12

    Catalytically synthesized methanol from H2 and CO2 using porous Cu/ZnO aggregates is a promising, carbon neutral, and renewable alternative to replace fossil fuel based transport fuels. However, the absence of surface-engineered model systems to understand and improve the industrial Cu/ZnO catalyst poses a big technological gap in efforts to increase industrial methanol conversion efficiency. In this work, we report a novel process for the fabrication of patterned, vertically aligned high aspect ratio 1D nanostructures on Si that can be used as an engineered model catalyst. The proposed strategy employs near-field phase shift lithography (NF-PSL), deep reactive ion etching (DRIE), and atomic layer deposition (ALD) to pattern, etch, and coat Si wafers to produce high aspect ratio 1D nanostructures. Using this method, we produced a model system consisting of high aspect ratio Cu-decorated ZnO nanotubes (NTs) to investigate the morphological effects of ZnO catalyst support in comparison to the planar Cu/ZnO catalyst in terms of the catalytic reactions. The engineered catalysts performed 70 times better in activating CO2 than the industrial catalyst. In light of the obtained results, several important points are highlighted, and recommendations are made to achieve higher catalytic performance.

  1. Different methods to alter surface morphology of high aspect ratio structures

    Science.gov (United States)

    Leber, M.; Shandhi, M. M. H.; Hogan, A.; Solzbacher, F.; Bhandari, R.; Negi, S.

    2016-03-01

    In various applications such as neural prostheses or solar cells, there is a need to alter the surface morphology of high aspect ratio structures so that the real surface area is greater than geometrical area. The change in surface morphology enhances the devices functionality. One of the applications of altering the surface morphology is of neural implants such as the Utah electrode array (UEA) that communicate with single neurons by charge injection induced stimulation or by recording electrical neural signals. For high selectivity between single cells of the nervous system, the electrode surface area is required to be as small as possible, while the impedance is required to be as low as possible for good signal to noise ratios (SNR) during neural recording. For stimulation, high charge injection and charge transfer capacities of the electrodes are required, which increase with the electrode surface. Traditionally, researchers have worked with either increasing the roughness of the existing metallization (platinum grey, black) or other materials such as Iridium Oxide and PEDOT. All of these previously investigated methods lead to more complicated metal deposition processes that are difficult to control and often have a critical impact on the mechanical properties of the metal films. Therefore, a modification of the surface underneath the electrode's coating will increase its surface area while maintaining the standard and well controlled metal deposition process. In this work, the surfaces of the silicon micro-needles were engineered by creating a defined microstructure on the electrodes surface using several methods such as laser ablation, focused ion beam, sputter etching, reactive ion etching (RIE) and deep reactive ion etching (DRIE). The surface modification processes were optimized for the high aspect ratio silicon structures of the UEA. The increase in real surface area while maintaining the geometrical surface area was verified using scanning electron

  2. Gust response analysis and wind tunnel test for a high-aspect ratio wing

    Directory of Open Access Journals (Sweden)

    Liu Yi

    2016-02-01

    Full Text Available A theoretical nonlinear aeroelastic response analysis for a flexible high-aspect ratio wing excited by harmonic gust load is presented along with a companion wind tunnel test. A multidisciplinary coupled numerical calculation is developed to simulate the flexible model wing undergoing gust load in the time domain via discrete nonlinear finite element structural dynamic analysis and nonplanar unsteady vortex lattice aerodynamic computation. A dynamic perturbation analysis about a nonlinear static equilibrium is also used to determine the small perturbation flutter boundary. A novel noncontact 3-D camera measurement analysis system is firstly used in the wind tunnel test to obtain the spatial large deformation and responses. The responses of the flexible wing under different static equilibrium states and frequency gust loads are discussed. The fair to good quantitative agreements between the theoretical and experimental results demonstrate that the presented analysis method is an acceptable way to predict the geometrically nonlinear gust response for flexible wings.

  3. The Capabilities of Electrodischarge Microdrilling of High Aspect Ratio Holes in Ceramic Materials

    Directory of Open Access Journals (Sweden)

    Skoczypiec Sebastian

    2015-09-01

    Full Text Available In the first part of the article the review of ceramic materials drilling possibilities was presented. Among the described methods special attention is paid to electrodischarge drilling. This process have especially been predicted for machining difficult-to-cut electrically conductive materials. The second part consist of the results analysis of electrodischarge microdrilling of siliconized silicon carbide. The experiment involves the impact of current amplitude, discharge voltage and pulse time on the hole depth, side gap, linear tool wear and mean drilling speed. The results shows that electrodischarge drilling is a good alternative when machining inhomogeneous ceramic materials and gives possibility to drill high aspect ratio holes with relatively high efficiency (the drilling speed >2 mm/min.

  4. Micro precision casting based on investment casting for micro structures with high aspect ratio

    Institute of Scientific and Technical Information of China (English)

    YANG Chuang; LI Bang-sheng; REN Ming-xing; FU Heng-zhi

    2009-01-01

    Microcasting is one of the significant technologies for the production of metallic micro parts with high aspect ratio (ratio of flow length to diameter). A micro precision casting technology based on investment casting using centrifugal method was investigated. The micro parts of Zn-4%Al alloy with an aspect ratio up to 200 was produced at the centrifugal speed of 1 500 r/min and the mold temperature of 270 ℃. The investigations on the relationship between flow length and rotational speed were carried out. For microcasting, the flow length is not only dependent on the centrifugal speed under the constant centrifugal radius, but also on the preheating temperature of mold. The flow length increases as the rotational speed and the mold temperature increase, and is much higher at a mold temperature of 270 ℃ than at other mold temperatures.

  5. Measurement and simulation of jet mass caused by a high-aspect ratio pertubation

    Energy Technology Data Exchange (ETDEWEB)

    Keiter, Paul A [Los Alamos National Laboratory; Cooley, James [Los Alamos National Laboratory; Kyrala, George [Los Alamos National Laboratory; Wilson, Doug [Los Alamos National Laboratory; Blue, Brent [LLNL/GA; Elliott, Jim [LLNL; Edwards, John [LLNL; Robey, Harry [LLNL; Spears, Brian [LLNL

    2009-01-01

    Inertial confinement fusion (ICF) capsule performance can be negatively impacted by the presence of hydrodynamic instabilities. To perform a gas fill on an ICF capsule current plans involve drilling a small hole and inserting a fill tube to inject the gas mixture into the capsule. This introduces a perturbation on the capsule, which can seed hydrodynamic instabilities. The small hole can cause jetting of the shell material into the gas, which might adversely affect the capsule performance. We have performed simulations and experiments to study the hydrodynamic evolution of jets from high-aspect ratio holes, such as the fill tube hole. Although simulations using cold materials over predict the amount of mass in the jet, when a reasonable amount of preheat (< 1 eV) is introduced, the simulations are in better agreement with the experiment.

  6. Measurement and simulation of jet mass caused by a high-aspect ratio hole perturbation

    Energy Technology Data Exchange (ETDEWEB)

    Keiter, Paul A [Los Alamos National Laboratory; Cooley, James H [Los Alamos National Laboratory; Wilson, D C [Los Alamos National Laboratory; Kyrala, George A [Los Alamos National Laboratory; Blue, Brent E [LLNL; Edwards, J [LLNL; Elliott, James B [LLNL; Robey, H F [LLNL; Spears, B [Los Alamos National Laboratory

    2009-01-01

    Inertial confinement fusion (ICF) capsule performance can be negatively impacted by the presence of hydrodynamic instabilities. To perform a gas fill on an ICF capsule, current plans involve drilling a small hole and inserting a fill tube to inject the gas mixture into the capsule. This introduces a perturbation on the capsule, which can seed hydrodynamic instabilities. The small hole can cause jetting of the shell material into the gas, which might adversely affect the capsule performance. We have performed simulations and experiments to study the hydrodynamic evolution of jets from high-aspect ratio holes, such as the fill tube hole. Although simulations using cold materials overpredict the amount of mass in the jet, when a reasonable amount of preheat (<1 eV) is introduced, the simulations are in better agreement with the experiment.

  7. A new multifunctional platform based on high aspect ratio interdigitated NEMS structures

    Energy Technology Data Exchange (ETDEWEB)

    Ghatnekar-Nilsson, S; Karlsson, I; Kvennefors, A; Luo, G; Zela, V; Parker, T; Litwin, A [NEMS AB, Solvegatan 16, S-223 62 Lund (Sweden); Arlelid, M [Electrical and Information Technology, Lund University, PO Box 118, S-221 00 Lund (Sweden); Montelius, L [Solid State Physics/The Nanometer Structure Consortium, Lund University, PO Box 118, S-221 00 Lund (Sweden)], E-mail: andrej.litwin@nems.se

    2009-04-29

    A multifunctional NEMS platform based on a mass-producible, surface relief grating has been developed and fabricated directly in polymer materials. The pattern consists of high aspect ratio interdigitated nanometer-sized pairs of walls and can be produced in a low-complexity one-step patterning process with nanoimprint lithography. In this paper, we demonstrate the usefulness of the platform primarily by showing an application as a high-sensitivity mass sensor in air. The sensors, which are based on the high frequency resonant response of around 200 MHz, show a mass responsivity of the order of 0.1 Hz/zg per wall at room temperature and in ambient air. Their ability to selectively adsorb airborne target molecules, such as thiols, is also demonstrated. We also show that the same device can function as a varactor for electronic circuits based on its large tunable capacitive range.

  8. A new multifunctional platform based on high aspect ratio interdigitated NEMS structures.

    Science.gov (United States)

    Ghatnekar-Nilsson, S; Karlsson, I; Kvennefors, A; Luo, G; Zela, V; Arlelid, M; Parker, T; Montelius, L; Litwin, A

    2009-04-29

    A multifunctional NEMS platform based on a mass-producible, surface relief grating has been developed and fabricated directly in polymer materials. The pattern consists of high aspect ratio interdigitated nanometer-sized pairs of walls and can be produced in a low-complexity one-step patterning process with nanoimprint lithography. In this paper, we demonstrate the usefulness of the platform primarily by showing an application as a high-sensitivity mass sensor in air. The sensors, which are based on the high frequency resonant response of around 200 MHz, show a mass responsivity of the order of 0.1 Hz/zg per wall at room temperature and in ambient air. Their ability to selectively adsorb airborne target molecules, such as thiols, is also demonstrated. We also show that the same device can function as a varactor for electronic circuits based on its large tunable capacitive range.

  9. A simple method for fabrication of high-aspect-ratio all-silicon grooves

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yuncan; Pan, An; Si, Jinhai, E-mail: jinhaisi@mail.xjtu.edu.cn; Chen, Tao; Chen, Feng; Hou, Xun

    2013-11-01

    A simple method using 800-nm femtosecond laser irradiation and chemical selective etching has been proposed for fabrication of high-aspect-ratio all-silicon grooves. Grooves with the maximum aspect ratio of 44 were produced. A scanning electronic microscopy equipped with an energy dispersive X-ray spectroscopy was employed to characterize the morphology and chemical composition of the grooves respectively. The formation mechanism of the grooves was attributed to the chemical reaction of the laser induced refractive index change microstructures and hydrofluoric acid solution. The dependences of the aspect ratio of the grooves on the laser irradiation parameters, such as: the numerical aperture of the microscope objective lens, the laser average power and the laser scanning velocity, are discussed.

  10. Hybrid UV Lithography for 3D High-Aspect-Ratio Microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sungmin; Nam, Gyungmok; Kim, Jonghun; Yoon, Sang-Hee [Inha Univ, Incheon (Korea, Republic of)

    2016-08-15

    Three-dimensional (3D) high-aspect-ratio (HAR) microstructures for biomedical applications (e.g., microneedle, microadhesive, etc.) are microfabricated using the hybrid ultraviolet (UV) lithography in which inclined, rotational, and reverse-side UV exposure processes are combined together. The inclined and rotational UV exposure processes are intended to fabricate tapered axisymmetric HAR microstructures; the reverse-side UV exposure process is designed to sharpen the end tip of the microstructures by suppressing the UV reflection on a bottom substrate which is inevitable in conventional UV lithography. Hybrid UV lithography involves fabricating 3D HAR microstructures with an epoxy-based negative photoresist, SU-8, using our customized UV exposure system. The effects of hybrid UV lithography parameters on the geometry of the 3D HAR microstructures (aspect ratio, radius of curvature of the end tip, etc.) are measured. The dependence of the end-tip shape on SU-8 soft-baking condition is also discussed.

  11. Maintaining high-Q in an optical microresonator coated with high-aspect-ratio gold nanorods

    Science.gov (United States)

    Ganta, D.; Dale, E. B.; Rosenberger, A. T.

    2013-10-01

    We report methods to coat fused-silica microresonators with solution-grown high-aspect-ratio (AR) gold nanorods (NRs). Microresonators coated using our method maintain an optical quality factor (Q) greater than 107 after coating. The more successful method involves silanization of the surface of the microresonator with 3-mercaptopropylmethyldimethoxysilane (MPMDMS), to enable the adhesion of gold NRs. The high-AR NR-coated microresonator combines the field enhancement of localized surface plasmon resonances with the cavity-enhanced evanescent components of high-Q whispering-gallery modes, making it useful for plasmonic sensing applications in the infrared. By coating with NRs having a different aspect ratio, the enhancement regime can be selected within a wide range of wavelengths.

  12. Dynamics of polymer nanoparticles through a single artificial nanopore with a high-aspect-ratio.

    Science.gov (United States)

    Cabello-Aguilar, Simon; Chaaya, Adib Abou; Bechelany, Mikhael; Pochat-Bohatier, Céline; Balanzat, Emmanuel; Janot, Jean-Marc; Miele, Philippe; Balme, Sébastien

    2014-11-14

    The development of nanometric Coulter counters for nanoparticle detection is an attractive and promising field of research. In this work, we have studied the influence of the nanopore surface state on charged polymer nanoparticle translocations. To make this, the translocation of carboxylate modified polystyrene microspheres (diameter 40, 70 and 100 nm) has been investigated through two kinds of high aspect ratio nanopores (negative and uncharged). The latter were tailored by a single track-etched and atomic layer deposition technique. It was shown that the mobility and the energy barrier are strongly dependent on nanopore surface charge. Typically if the latter exhibits negative surface charge, the microsphere mobility increases and the global energy barrier of entrance inside the nanopore decreases with its diameter, converse to the uncharged nanopore.

  13. Pilot Study of Inhaled Aerosols Targeted via Magnetic Alignment of High Aspect Ratio Particles in Rabbits

    Directory of Open Access Journals (Sweden)

    Gillian E. S. Redman

    2011-01-01

    Full Text Available Recently, inhaled pharmaceutical aerosols have seen increased investigation in the treatment of lung cancer, where the inability to deliver adequate therapeutic drug concentrations to tumour sites may be overcome with improved targeted delivery to the site of the tumour. In this study, the feasibility of magnetically targeted delivery of high aspect ratio particles loaded with iron oxide nanoparticles was studied in 19 New Zealand White rabbits. Half of the exposed rabbits had a magnetic field placed externally over their right lung. Iron sensitive magnetic resonance images of the lungs were acquired to determine the iron concentrations in the right and left lung of each animal. The right/left ratio increased in the middle and basal regions of the lung where, due to the morphology of the rabbit lung, this method of targeting is most effective. With further optimization, this technique could be an effective method for increasing the dose of drug delivered to a specific site within the lung.

  14. Surface-diffusion-driven decay of high-aspect-ratio gratings: existence of morphologically related classes.

    Science.gov (United States)

    Madrid, Marcos A; Salvarezza, Roberto C; Castez, Marcos F

    2013-06-01

    We present numerical and theoretical results concerning the technologically important process of evolution of high-aspect-ratio profiles due to surface diffusion under thermal treatment. We show how a broad class of initial gratings adopt, after a short transient stage, a typical shape that can be accurately described as a curve whose curvature has only two single Fourier modes as a function of the arc-length parameter. Moreover, we introduce a set of evolution equations for the relevant parameters that accounts very accurately for both morphological and kinetic aspects of the transformation processes for these curves in a wide region in parameter space. Regarding the decay of rectangular gratings, our numerical results show the existence of geometrically related classes that asymptotically approach to the same trajectory in parameter space. Gratings belonging to the same class pass through the same sequence of morphologies before reaching the final equilibrium state.

  15. Multiscale Domain Decomposition Methods for Elliptic Problems with High Aspect Ratios

    Institute of Scientific and Technical Information of China (English)

    Jфrg Aarnes; Thomas Y. Hou

    2002-01-01

    In this paper we study some nonoverlapping domain decomposition methods for solving a class of elliptic problems arising from composite materials and flows in porous media which contain many spatial scales. Our preconditioner differs from traditional domain decomposition preconditioners by using a coarse solver which is adaptive to small scale heterogeneous features. While the convergence rate of traditional domain decomposition algorithms using coarse solvers based on linear or polynomial interpolations may deteriorate in the presence of rapid small scale oscillations or high aspect ratios, our preconditioner is applicable to multiplescale problems without restrictive assumptions and seems to have a convergence rate nearly independent of the aspect ratio within the substructures. A rigorous convergence analysis based on the Schwarz framework is carried out, and we demonstrate the efficiency and robustness of the proposed preconditioner through numerical experiments which include problems with multiple-scale coefficients, as well problems with continuous scales.

  16. A wearable, highly stable, strain and bending sensor based on high aspect ratio graphite nanobelts

    Science.gov (United States)

    Alaferdov, A. V.; Savu, R.; Rackauskas, T. A.; Rackauskas, S.; Canesqui, M. A.; de Lara, D. S.; Setti, G. O.; Joanni, E.; de Trindade, G. M.; Lima, U. B.; de Souza, A. S.; Moshkalev, S. A.

    2016-09-01

    A simple and scalable method was developed for the fabrication of wearable strain and bending sensors, based on high aspect ratio (length/thickness ˜103) graphite nanobelt thin films deposited by a modified Langmuir-Blodgett technique onto flexible polymer substrates. The sensing mechanism is based on the changes in contact resistance between individual nanobelts upon substrate deformation. Very high sensor response stability for more than 5000 strain-release cycles and a device power consumption as low as 1 nW were achieved. The device maximum stretchability is limited by the metal electrodes and the polymer substrate; the maximum strain that could be applied to the polymer used in this work was 40%. Bending tests carried out for various radii of curvature demonstrated distinct sensor responses for positive and negative curvatures. The graphite nanobelt thin flexible films were successfully tested for acoustic vibration and heartbeat sensing.

  17. Design and Simulation of BTT Missile with High-Aspect-Ratio Wing Robust H∞ Autopilot

    Institute of Scientific and Technical Information of China (English)

    CUI Sheng-wang; LIU Li; MA Chun-yan

    2007-01-01

    For the strong coupling among the channels of bank-to-turn (BTT) missile with high-aspect-ratio wing,an autopilot is designed with a two loop control structure robust autopilot design methods.By the inner loop design,the question of pole-zero cancellation is solved,and the stabilization of structured uncertainty is achieved.Through the outer loop of H∞ controller design,the flying performance and robustness can be guaranteed.The nonlinear simulation results show that the autopilot designed has perfect time domain response,and can suppress bad influence of the inertial and kinematics couplings.It can make the missile fly stably in the large flying areas.The control is very effective.

  18. Large-area thermoelectric high-aspect-ratio nanostructures by atomic layer deposition

    Science.gov (United States)

    Ruoho, Mikko; Juntunen, Taneli; Tittonen, Ilkka

    2016-09-01

    We report on the thermoelectric properties of large-area high-aspect-ratio nanostructures. We fabricate the structures by atomic layer deposition of conformal ZnO thin films on track-etched polycarbonate substrate. The resulting structure consists of ZnO tubules which continue through the full thickness of the substrate. The electrical and thermal properties of the structures are studied both in-plane and out-of-plane. They exhibit very low out-of-plane thermal conductivity down to 0.15 W m-1 K-1 while the in-plane sheet resistance of the films was found to be half that of the same film on glass substrate, allowing material-independent doubling of output power of any planar thin-film thermoelectric generator. The wall thickness of the fabricated nanotubes was varied within a range of up to 100 nm. The samples show polycrystalline nature with (002) preferred crystal orientation.

  19. Nanoscale tomographic reconstruction of the subsurface mechanical properties of low-k high-aspect ratio patterns

    Science.gov (United States)

    Stan, Gheorghe; Mays, Ebony; Yoo, Hui Jae; King, Sean W.

    2016-12-01

    In this work, intermittent contact resonance atomic force microscopy (ICR-AFM) was performed on high-aspect ratio a-SiOC:H patterned fins (100 nm in height and width from 20 to 90 nm) to map the depth and width dependencies of the material stiffness. The spatial resolution and depth sensitivity of the measurements were assessed from tomographic cross-sections over various regions of interest within the 3D space of the measurements. Furthermore, the depth-dependence of the measured contact stiffness over the scanned area was used to determine the sub-surface variation of the elastic modulus at each point in the scan. This was achieved by iteratively adjusting the local elastic profile until the depth dependence of the resulted contact stiffness matched the depth dependence of the contact stiffness measured by ICR-AFM at that location. The results of this analysis were assembled into nanoscale sub-surface tomographic images of the elastic modulus of the investigated SiOC:H patterns. A new 3D structure-property representation emerged from these tomographic images with direct evidence for the alterations sustained by the structures during processing.

  20. High yield polyol synthesis of round- and sharp-end silver nanowires with high aspect ratio

    Energy Technology Data Exchange (ETDEWEB)

    Nekahi, A.; Marashi, S.P.H., E-mail: pmarashi@aut.ac.ir; Fatmesari, D. Haghshenas

    2016-12-01

    Long silver nanowires (average length of 28 μm, average aspect ratio of 130) with uniform diameter along their length were produced by polyol synthesis of AgNO{sub 3} in ethylene glycol in the presence of PVP as preferential growth agent. Nanowires were produced with no addition of chloride salts such as NaCl or CuCl{sub 2} (or other additives such as Na{sub 2}S) which are usually used for lowering reduction rate of Ag ions by additional etchant of O{sub 2}/Cl{sup −}. Lower reduction rate was obtained by increasing the injection time of PVP and AgNO{sub 3} solutions, which was the significant factor in the formation of nanowires. Therefore, there was enough time for reduced Ag atoms to be deposited preferentially in the direction of PVP chains, resulting in high yield (the fraction of nanowires in the products) of nanowires (more than 95%) with high aspect ratio. The produced nanowires had both round- and sharp-ends with pentagonal cross section. Higher energy level of Ag atoms in borders of MTPs, which increases the dissolution rate of precipitated atoms, in addition to partial melting of MTPs at high synthesis temperatures, leads to the curving of the surfaces of exposed (111) crystalline planes in some MTPs and the formation of round-end silver nanowires. - Highlights: • Long silver nanowires with high aspect ratio of 130 were produced. • More than 95% nanowires were produced in products. • The produced nanowires had round- and sharp-ends with pentagonal cross section. • Additives were needed neither for high yield synthesis nor for round-end nanowires. • Melting and etching of MTPs in high energy borders resulted to round-end nanowires.

  1. A small perturbation based optimization approach for the frequency placement of high aspect ratio wings

    Science.gov (United States)

    Goltsch, Mandy

    Design denotes the transformation of an identified need to its physical embodiment in a traditionally iterative approach of trial and error. Conceptual design plays a prominent role but an almost infinite number of possible solutions at the outset of design necessitates fast evaluations. The corresponding practice of empirical equations and low fidelity analyses becomes obsolete in the light of novel concepts. Ever increasing system complexity and resource scarcity mandate new approaches to adequately capture system characteristics. Contemporary concerns in atmospheric science and homeland security created an operational need for unconventional configurations. Unmanned long endurance flight at high altitudes offers a unique showcase for the exploration of new design spaces and the incidental deficit of conceptual modeling and simulation capabilities. Structural and aerodynamic performance requirements necessitate light weight materials and high aspect ratio wings resulting in distinct structural and aeroelastic response characteristics that stand in close correlation with natural vibration modes. The present research effort evolves around the development of an efficient and accurate optimization algorithm for high aspect ratio wings subject to natural frequency constraints. Foundational corner stones are beam dimensional reduction and modal perturbation redesign. Local and global analyses inherent to the former suggest corresponding levels of local and global optimization. The present approach departs from this suggestion. It introduces local level surrogate models to capacitate a methodology that consists of multi level analyses feeding into a single level optimization. The innovative heart of the new algorithm originates in small perturbation theory. A sequence of small perturbation solutions allows the optimizer to make incremental movements within the design space. It enables a directed search that is free of costly gradients. System matrices are decomposed

  2. Gust response analysis and wind tunnel test for a high-aspect ratio wing

    Institute of Scientific and Technical Information of China (English)

    Liu Yi; Xie Changchuan; Yang Chao; Cheng Jialin

    2016-01-01

    A theoretical nonlinear aeroelastic response analysis for a flexible high-aspect ratio wing excited by harmonic gust load is presented along with a companion wind tunnel test. A multidisci-plinary coupled numerical calculation is developed to simulate the flexible model wing undergoing gust load in the time domain via discrete nonlinear finite element structural dynamic analysis and nonplanar unsteady vortex lattice aerodynamic computation. A dynamic perturbation analysis about a nonlinear static equilibrium is also used to determine the small perturbation flutter bound-ary. A novel noncontact 3-D camera measurement analysis system is firstly used in the wind tunnel test to obtain the spatial large deformation and responses. The responses of the flexible wing under different static equilibrium states and frequency gust loads are discussed. The fair to good quanti-tative agreements between the theoretical and experimental results demonstrate that the presented analysis method is an acceptable way to predict the geometrically nonlinear gust response for flex-ible wings.

  3. Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches

    Science.gov (United States)

    Erkens, I. J. M.; Verheijen, M. A.; Knoops, H. C. M.; Keuning, W.; Roozeboom, F.; Kessels, W. M. M.

    2017-02-01

    To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3 vapor and O2 gas at 300 °C. Plasma-assisted ALD of Pt using O2 plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In this work, it is demonstrated that plasma-assisted ALD at 300 °C also allows for the deposition of highly conformal Pt films in trenches with high aspect ratio ranging from 3 to 34. Scanning electron microscopy inspection revealed that the conformality of the deposited Pt films was 100% in trenches with aspect ratio (AR) up to 34. These results were corroborated by high-precision layer thickness measurements by transmission electron microscopy for trenches with an aspect ratio of 22. The role of the surface recombination of O-radicals and the contribution of thermal ALD reactions is discussed.

  4. Wet Etched High Aspect Ratio Microstructures on Quartz for MEMS Applications

    Science.gov (United States)

    Liang, Jinxing; Kohsaka, Fusao; Matsuo, Takahiro; Ueda, Toshitsugu

    Z cut α-quartz wafers were etched in saturated ammonium bifluoride solution at 87 degrees C. The side wall profiles were observed using the scanning electron microscopy (SEM) and plotted dependent on the polar direction. This research focused on investigating high aspect ratio trench and through-hole, which were dependent on the polar direction to the crystal axis. Aspect ratio in dependence on polar direction was also plotted and microchannels with aspect ratio > 3 could be achieved at the polar angle between 30° to 60°. The possibility of application for microcapillary was discussed, and the trench at 45° was considered best. Double-sided etching technique was used for manufacturing through-hole structures. Through-hole at 0° was demonstrated effective for fabrication of capacitive MEMS tilt sensor. Through-holes at 15° and 105° were proposed for fabrication of 90°-arranged two axis capactive tilt sensor, taking advantage of the twofold symmetry property around X axis and threefold symmetry property around Z axis.

  5. Dimensional measurement of micro parts with high aspect ratio in HIT-UOI

    Science.gov (United States)

    Dang, Hong; Cui, Jiwen; Feng, Kunpeng; Li, Junying; Zhao, Shiyuan; Zhang, Haoran; Tan, Jiubin

    2016-11-01

    Micro parts with high aspect ratios have been widely used in different fields including aerospace and defense industries, while the dimensional measurement of these micro parts becomes a challenge in the field of precision measurement and instrument. To deal with this contradiction, several probes for the micro parts precision measurement have been proposed by researchers in Center of Ultra-precision Optoelectronic Instrument (UOI), Harbin Institute of Technology (HIT). In this paper, optical fiber probes with structures of spherical coupling(SC) with double optical fibers, micro focal-length collimation (MFL-collimation) and fiber Bragg grating (FBG) are described in detail. After introducing the sensing principles, both advantages and disadvantages of these probes are analyzed respectively. In order to improve the performances of these probes, several approaches are proposed. A two-dimensional orthogonal path arrangement is propounded to enhance the dimensional measurement ability of MFL-collimation probes, while a high resolution and response speed interrogation method based on differential method is used to improve the accuracy and dynamic characteristics of the FBG probes. The experiments for these special structural fiber probes are given with a focus on the characteristics of these probes, and engineering applications will also be presented to prove the availability of them. In order to improve the accuracy and the instantaneity of the engineering applications, several techniques are used in probe integration. The effectiveness of these fiber probes were therefore verified through both the analysis and experiments.

  6. Etching of Silicon in HBr Plasmas for High Aspect Ratio Features

    Science.gov (United States)

    Hwang, Helen H.; Meyyappan, M.; Mathad, G. S.; Ranade, R.

    2002-01-01

    Etching in semiconductor processing typically involves using halides because of the relatively fast rates. Bromine containing plasmas can generate high aspect ratio trenches, desirable for DRAM and MEMS applications, with relatively straight sidewalk We present scanning electron microscope images for silicon-etched trenches in a HBr plasma. Using a feature profile simulation, we show that the removal yield parameter, or number of neutrals removed per incident ion due to all processes (sputtering, spontaneous desorption, etc.), dictates the profile shape. We find that the profile becomes pinched off when the removal yield is a constant, with a maximum aspect ratio (AR) of about 5 to 1 (depth to height). When the removal yield decreases with increasing ion angle, the etch rate increases at the comers and the trench bottom broadens. The profiles have ARs of over 9:1 for yields that vary with ion angle. To match the experimentally observed etched time of 250 s for an AR of 9:1 with a trench width of 0.135 microns, we find that the neutral flux must be 3.336 x 10(exp 17)sq cm/s.

  7. Tunable Ultra-high Aspect Ratio Nanorod Architectures grown on Porous Substrate via Electromigration.

    Science.gov (United States)

    Mansourian, Ali; Paknejad, Seyed Amir; Wen, Qiannan; Vizcay-Barrena, Gema; Fleck, Roland A; Zayats, Anatoly V; Mannan, Samjid H

    2016-02-29

    The interplay between porosity and electromigration can be used to manipulate atoms resulting in mass fabrication of nanoscale structures. Electromigration usually results in the accumulation of atoms accompanied by protrusions at the anode and atomic depletion causing voids at the cathode. Here we show that in porous media the pattern of atomic deposition and depletion is altered such that atomic accumulation occurs over the whole surface and not just at the anode. The effect is explained by the interaction between atomic drift due to electric current and local temperature gradients resulting from intense Joule heating at constrictions between grains. Utilizing this effect, a porous silver substrate is used to mass produce free-standing silver nanorods with very high aspect ratios of more than 200 using current densities of the order of 10(8) A/m(2). This simple method results in reproducible formation of shaped nanorods, with independent control over their density and length. Consequently, complex patterns of high quality single crystal nanorods can be formed in-situ with significant advantages over competing methods of nanorod formation for plasmonics, energy storage and sensing applications.

  8. Nanofabrication of high aspect ratio structures using an evaporated resist containing metal

    Science.gov (United States)

    Con, Celal; Zhang, Jian; Cui, Bo

    2014-05-01

    Organic electron beam resists are typically not resistant to the plasma etching employed to transfer the pattern into the underlying layer. Here, the authors present the incorporation of a metal hard mask material into negative resist polystyrene by co-evaporation of the polystyrene and the metal onto a substrate. With a volume ratio of 1:15 between Cr and polystyrene, this nanocomposite resist showed an etching selectivity to silicon one order higher than pure polystyrene resist. Silicon structures of 100 nm width and 3.5 μm height (aspect ratio 1:35) were obtained using a non-switching deep silicon etching recipe with SF6 and C4F8 gas. Moreover, unlike the common spin coating method, evaporated nanocomposite resist can be coated onto irregular and non-flat surfaces such as optical fibers and AFM cantilevers. As a proof of concept, we fabricated high aspect ratio structures on top of an AFM cantilever. Nanofabrication on non-flat surfaces may find applications in the fields of (AFM) tip enhanced Raman spectroscopy for chemical analysis and lab-on-fiber technology.

  9. Analysis of Interrupted Rectangular Microchannel Heat Sink with High Aspect Ratio

    Directory of Open Access Journals (Sweden)

    Harshin Kamal

    2017-01-01

    Full Text Available A computational modelling of microchannel heat sinks with high aspect ratio has been performed to compare the geometrical features in the plane parallel to the heating surface and to determine the optimum configuration for the best heat transfer characteristics. A periodic thermal development of flow can cause significant heat transfer enhancement. A consensus on a particular geometrical configuration that provides the best heat transfer characteristics has not been reached in the literature, although many novel ideas have been proposed recently. Firstly the validity and applicability of microchannel sink modelling is presented followed by an optimization of parameters of interrupted microchannel heat sink. Consequences of the multichannel effect due to the introduction of transverse microchamber are also presented. It has been shown that the average Nusselt number of the microchannel heat sink increases by the introduction of a transverse microchamber with the additional advantage of a lower pressure drop. There exists an optimum width for the transverse microchamber for which the interrupted microchannel heat sink shows optimum characteristics.

  10. Measuring ion velocity distribution functions through high-aspect ratio holes in inductively coupled plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Cunge, G., E-mail: gilles.cunge@cea.fr; Darnon, M.; Dubois, J.; Bezard, P.; Mourey, O.; Petit-Etienne, C.; Vallier, L.; Despiau-Pujo, E.; Sadeghi, N. [Laboratoire des Technologies de la Microélectronique, CNRS, 17 rue des Martyrs, 38054 Grenoble (France)

    2016-02-29

    Several issues associated with plasma etching of high aspect ratio structures originate from the ions' bombardment of the sidewalls of the feature. The off normal angle incident ions are primarily due to their temperature at the sheath edge and possibly to charging effects. We have measured the ion velocity distribution function (IVDF) at the wafer surface in an industrial inductively coupled plasma reactor by using multigrid retarding field analyzers (RFA) in front of which we place 400 μm thick capillary plates with holes of 25, 50, and 100 μm diameters. The RFA then probes IVDF at the exit of the holes with Aspect Ratios (AR) of 16, 8, and 4, respectively. The results show that the ion flux dramatically drops with the increase in AR. By comparing the measured IVDF with an analytical model, we concluded that the ion temperature is 0.27 eV in our plasma conditions. The charging effects are also observed and are shown to significantly reduce the ion energy at the bottom of the feature but only with a “minor” effect on the ion flux and the shape of the IVDF.

  11. High-speed microprobe for roughness measurements in high-aspect-ratio microstructures

    Science.gov (United States)

    Doering, Lutz; Brand, Uwe; Bütefisch, Sebastian; Ahbe, Thomas; Weimann, Thomas; Peiner, Erwin; Frank, Thomas

    2017-03-01

    Cantilever-type silicon microprobes with an integrated tip and a piezoresistive signal read out have successfully proven to bridge the gap between scanning force microscopy and stylus profilometry. Roughness measurements in high-aspect-ratio microstructures (HARMS) with depths down to 5 mm and widths down to 50 µm have been demonstrated. To improve the scanning speed up to 15 mm s‑1, the wear of the tip has to be reduced. The atomic layer deposition (ALD) technique with alumina (Al2O3) has been tested for this purpose. Repeated wear measurements with coated and uncoated microprobe cantilevers have been carried out on a roughness standard at a speed of 15 mm s‑1. The tip shape and the wear have been measured using a new probing tip reference standard containing rectangular silicon grooves with widths from 0.3 µm to 3 µm. The penetration depth of the microprobe allows one to measure the wear of the tip as well as the tip width and the opening angle of the tip. The roughness parameters obtained on the roughness standard during wear experiments agree well with the reference values measured with a calibrated stylus instrument, nevertheless a small amount of wear still is observable. Further research is necessary in order to obtain wear resistant microprobe tips for non-destructive inspection of microstructures in industry and microform measurements, for example in injection nozzles.

  12. Gas-Assisted Heating Technology for High Aspect Ratio Microstructure Injection Molding

    Directory of Open Access Journals (Sweden)

    Shia-Chung Chen

    2013-01-01

    Full Text Available A hot gas is used for heating the cavity surface of a mold. Different mold gap sizes were designed. The mold surface temperature was heated to above the glass transition temperature of the plastic material, and the mold then closed for melt filling. The cavity surface can be heated to 130°C to assist the melt filling of the microfeatures. Results show that hot gas heating can improve the filling process and achieve 91% of the high aspect ratio microgrooves (about 640.38 μm of the maximum of 700 μm. The mold gap size strongly affects the heating speed and heating uniformity. Without surface preheating, the center rib is the highest. When the heating target temperature is 90°C or 100°C, the three microribs have a good uniformity of height. However, when the target temperature exceeds 100°C, the left side rib is higher than the other ribs.

  13. Bosch-like method for creating high aspect ratio poly(methyl methacrylate) (PMMA) structures

    KAUST Repository

    Haiducu, Marius

    2012-02-02

    This paper presents a method for etching millimetre-deep trenches in commercial grade PMMA using deep-UV at 254 nm. The method is based on consecutive cycles of irradiation and development of the exposed areas, respectively. The exposure segment is performed using an inexpensive, in-house built irradiation box while the development part is accomplished using an isopropyl alcohol (IPA):H2O developer. The method was tested and characterized by etching various dimension square test structures in commercial grade, mirrored acrylic. The undercut of the sidewalls due to the uncollimated nature of the irradiation light was dramatically alleviated by using a honeycomb metallic grid in between the irradiation source and the acrylic substrate and by rotating the latter using a direct current (DC) motor-driven stage. By using an extremely affordable set-up and non-toxic, environmentally friendly materials and substances, this process represents an excellent alternative to microfabricating microfluidic devices in particular and high aspect ratio structures in general using PMMA as substrate. © 2012 SPIE.

  14. Ultra-high aspect ratio copper nanowires as transparent conductive electrodes for dye sensitized solar cells

    Science.gov (United States)

    Zhu, Zhaozhao; Mankowski, Trent; Shikoh, Ali Sehpar; Touati, Farid; Benammar, Mohieddine A.; Mansuripur, Masud; Falco, Charles M.

    2016-09-01

    We report the synthesis of ultra-high aspect ratio copper nanowires (CuNW) and fabrication of CuNW-based transparent conductive electrodes (TCE) with high optical transmittance (>80%) and excellent sheet resistance (Rs zinc oxide (AZO) thin-film coatings, or platinum thin film coatings, or nickel thin-film coatings. Our hybrid transparent electrodes can replace indium tin oxide (ITO) films in dye-sensitized solar cells (DSSCs) as either anodes or cathodes. We highlight the challenges of integrating bare CuNWs into DSSCs, and demonstrate that hybridization renders the solar cell integrations feasible. The CuNW/AZO-based DSSCs have reasonably good open-circuit voltage (Voc = 720 mV) and short-circuit current-density (Jsc = 0.96 mA/cm2), which are comparable to what is obtained with an ITO-based DSSC fabricated with a similar process. Our CuNW-Ni based DSSCs exhibit a good open-circuit voltage (Voc = 782 mV) and a decent short-circuit current (Jsc = 3.96 mA/cm2), with roughly 1.5% optical-to-electrical conversion efficiency.

  15. Atomic Layer Deposition for Coating of High Aspect Ratio TiO2 Nanotube Layers

    Science.gov (United States)

    2016-01-01

    We present an optimized approach for the deposition of Al2O3 (as a model secondary material) coating into high aspect ratio (≈180) anodic TiO2 nanotube layers using the atomic layer deposition (ALD) process. In order to study the influence of the diffusion of the Al2O3 precursors on the resulting coating thickness, ALD processes with different exposure times (i.e., 0.5, 2, 5, and 10 s) of the trimethylaluminum (TMA) precursor were performed. Uniform coating of the nanotube interiors was achieved with longer exposure times (5 and 10 s), as verified by detailed scanning electron microscopy analysis. Quartz crystal microbalance measurements were used to monitor the deposition process and its particular features due to the tube diameter gradient. Finally, theoretical calculations were performed to calculate the minimum precursor exposure time to attain uniform coating. Theoretical values on the diffusion regime matched with the experimental results and helped to obtain valuable information for further optimization of ALD coating processes. The presented approach provides a straightforward solution toward the development of many novel devices, based on a high surface area interface between TiO2 nanotubes and a secondary material (such as Al2O3). PMID:27643411

  16. Large-Area High Aspect Ratio Plasmonic Interference Lithography Utilizing a Single High-k Mode.

    Science.gov (United States)

    Chen, Xi; Yang, Fan; Zhang, Cheng; Zhou, Jing; Guo, L Jay

    2016-04-26

    Plasmonic lithography, which utilizes subwavelength confinement of surface plasmon polartion (SPP) waves, has the capability of breaking the diffraction limit and delivering high resolution. However, all previously reported results suffer from critical issues, such as shallow pattern depth and pattern nonuniformity even over small exposure areas, which limit the application of the technology. In this work, periodic patterns with high aspect ratios and a half-pitch of about 1/6 of the wavelength were achieved with pattern uniformity in square centimeter areas. This was accomplished by designing a special mask and photoresist (PR) system to select a single high spatial frequency mode and incorporating the PR into a waveguide configuration to ensure uniform light exposure over the entire depth of the photoresist layer. In addition to the experimental progress toward large-scale applications of plasmonic interference lithography, the general criteria of designing such an exposure system is also discussed, which can be used for nanoscale fabrication in this fashion for various applications with different requirements for wavelength, pitch, aspect ratio, and structure.

  17. Geometrical Nonlinear Aeroelastic Stability Analysis of a Composite High-Aspect-Ratio Wing

    Directory of Open Access Journals (Sweden)

    Chang Chuan Xie

    2008-01-01

    Full Text Available A composite high-aspect-ratio wing of a high-altitude long-endurance (HALE aircraft was modeled with FEM by MSC/NASTRAN, and the nonlinear static equilibrium state is calculated under design load with follower force effect, but without load redistribution. Assuming the little vibration amplitude of the wing around the static equilibrium state, the system is linearized and the natural frequencies and mode shapes of the deformed structure are obtained. Planar doublet lattice method is used to calculate unsteady aerodynamics in frequency domain ignoring the bending effect of the deflected wing. And then, the aeroelastic stability analysis of the system under a given load condition is successively carried out. Comparing with the linear results, the nonlinear displacement of the wing tip is higher. The results indicate that the critical nonlinear flutter is of the flap/chordwise bending type because of the chordwise bending having quite a large torsion component, with low critical speed and slowly growing damping, which dose not appear in the linear analysis. Furthermore, it is shown that the variation of the nonlinear flutter speed depends on the scale of the load and on the chordwise bending frequency. The research work indicates that, for the very flexible HALE aircraft, the nonlinear aeroelastic stability is very important, and should be considered in the design progress. Using present FEM software as the structure solver (e.g. MSC/NASTRAN, and the unsteady aerodynamic code, the nonlinear aeroelastic stability margin of a complex system other than a simple beam model can be determined.

  18. High-Aspect Ratio Bio-Metallic Nanocomposites for Cellular Interactions

    Science.gov (United States)

    Deodhar, Sneha; Huckaby, Justin; Delahoussaye, Miles; DeCoster, Mark A.

    2014-08-01

    We synthesized high aspect ratio composites with biological and metal components. Scanning electron microscopy (SEM) and Transmission Electron Microscopy (TEM) revealed linear morphology and smooth surface texture. SEM, TEM and light microscopy showed that composites have scalable dimensions from nano- to micro-, with diameters as low as 60 nm, lengths exceeding 150 pm, and average aspect ratio of 100. The structures are stable, remaining intact for over one year in dried form and in liquid, and did not aggregate, in contrast to metal nanoparticles such as iron and copper. Many metal nanoparticles are toxic to cells, limiting their use for biological applications. The bio-metallic composites characterized here showed lower toxicity compared to their precursor metal nanoparticles in brain tumor cell cultures. Due to these more biocompatible properties, we tested the ability of the composites to interact with cells. Zeta potential analysis indicated that composites carry a net negative charge (-24.3 ± 2.2 mV), while the starting metal nanoparticles measured (43.3 ± 2.4 mV). We labeled the composites with poly-l-lysine fluorescein isothiocyanate (PLL-FITC), which shifted the potential to 3.5 ± 2.9 mV. It was observed by fluorescence microscopy that composites smaller than cells were internalized by some cells and larger composites remained outside. Cells became fluorescent over time due to leakage of PLL-FITC from the composites which lost fluorescence over time. Higher biocompatibility, low aggregation, and ability to control size distribution of the linear composites may make them ideal vehicles to deliver drugs or other materials to cells, and may be used as a scaffolding material for cells.

  19. Fabrication of micro-pin array with high aspect ratio on stainless steel using nanosecond laser beam machining

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Se Won [School of Mechanical and Aerospace Engineering, Seoul National University, Gwanak 599 Gwanak-ro, Gwanak-Gu, Seoul, 151-744 (Korea, Republic of); Shin, Hong Shik, E-mail: shinhs05@ut.ac.kr [Department of Energy System Engineering, Korea National University of Transportation, Chungju, Chungbuk, 380-702 (Korea, Republic of); Chu, Chong Nam [School of Mechanical and Aerospace Engineering, Seoul National University, Gwanak 599 Gwanak-ro, Gwanak-Gu, Seoul, 151-744 (Korea, Republic of)

    2013-01-01

    Highlights: Black-Right-Pointing-Pointer A high aspect ratio micro-pin array was fabricated by laser beam machining using the piling of a recast layer. Black-Right-Pointing-Pointer The recast layer could be piled due to the chromium oxide with high surface tension and viscosity of chromium oxide. Black-Right-Pointing-Pointer The machining characteristics for a high aspect ratio micro-pin array were investigated according to laser beam parameters. Black-Right-Pointing-Pointer Experiments for attaching force relative to the surface roughness of the subject plane were carried out. Black-Right-Pointing-Pointer The developed micro-pin array was successfully attached to vertical wall. - Abstract: In this paper, a micro-pin array with a high aspect ratio was fabricated on AISI 304 using laser beam ablation for attachment to a vertical wall. In recent times, there has been research in various fields, including robotics and bio-MEMS, regarding attachment to vertical walls, and micro-pin arrays may offer the best solution. For vertical wall attachment, the micro-pin should have a high aspect ratio, long length, and sharp tip. The recast layer could be piled due to the chromium oxide with high surface tension and viscosity of chromium oxide, and it composed the micro-pins with high aspect ratio. X-ray photoelectron spectroscopy (XPS) was used to identify the characteristics of the piled recast layer. The machining characteristics for a high aspect ratio micro-pin array were investigated according to laser beam machining parameters. In addition, experiments for attaching force relative to the surface roughness of the subject plane were carried out.

  20. Jet noise of high aspect-ratio rectangular nozzles with application to pneumatic high-lift devices

    Science.gov (United States)

    Munro, Scott Edward

    Circulation control wings are a type of pneumatic high-lift device that have been extensively researched as to their aerodynamic benefits. However, there has been little research into the possible airframe noise reduction benefits. The key element of noise is the jet noise associated with the jet sheet emitted from the blowing slot. This jet sheet is essentially a high aspect-ratio rectangular jet. This study directly compared far-field noise emissions from a state-of-the-art circulation control wing high lift configuration, and a conventional wing also configured for high lift. Results indicated that a circulation control wing had a significant acoustic advantage over a conventional wing for identical lift performance. A high aspect-ratio nozzle was fabricated to study the general characteristics of high aspect-ratio jets with aspect ratios from 100 to 3000. The results of this study provided the basic elements in understanding how to reduce the noise from a circulation control wing. High aspect-ratio nozzle results showed that the jet noise of this type of jet was proportional to the 8th power of the jet velocity. It was also found that the jet noise was proportional to the slot height to the 3/2 power and slot width to the 1/2 power. Fluid dynamic experiments were also performed on the high aspect-ratio nozzle. Single hot-wire experiments indicated that the jet exhaust from the high aspect-ratio nozzle was similar to a 2-d turbulent jet. Two-wire space-correlation experiments were performed to attempt to find a relationship between the slot height of the jet and the length-scale of the flow noise generating turbulence structure. The turbulent eddy convection velocity was also calculated, and was found to vary with the local centerline velocity, and also as a function of the frequency of the eddy.

  1. BisGMA/TEGDMA dental composite containing high aspect-ratio hydroxyapatite nanofibers

    Science.gov (United States)

    Chen, Liang; Yu, Qingsong; Wang, Yong; Li, Hao

    2011-01-01

    Objectives The objectives of this study are to investigate the properties of high aspect-ratio hydroxyapatite (HAP) nanofibers and the reinforcing effect of such fibers on bisphenol A glycidyl methacrylate (BisGMA)/triethylene glycol dimethacrylate (TEGDMA) dental resins (without silica microparticle filler) and dental composites (with silica microparticle filler) with various mass fractions (loading rates). Methods HAP nanofibers were synthesized using a wet-chemical method and characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), and thermal gravimetric analysis (TGA). Biaxial flexural strength (BFS) of the HAP nanofibers reinforced dental resins without any microsized filler and dental composites with silica microparticle filler was tested and analysis of variance (ANOVA) was used for the statistically analysis of acquired data. The morphology of fracture surface of tested dental composite samples was examined by SEM. Results The HAP nanofibers with aspect-ratios of 600 to 800 can be successfully fabricated with a simple wet-chemical method in aqueous solution. Impregnation of small mass fractions of the HAP nanofibers (5 wt% or 10 wt%) into the BisGMA/TEGDMA dental resins or impregnation of small mass fractions of the HAP nanofibers (2 wt% or 3 wt%) into the dental composites can substantially improve the biaxial flexural strength of the resulting dental resins and composites. A percolation threshold of HAP nanofibers, beyond which more nanofibers will no longer further increase the mechanical properties of dental composites containing HAP nanofibers, was observed for the dental composites with or without silica microparticle filler. Our mechanical testing and fractographic analysis indicated that the relatively good dispersion of HAP nanofibers at low mass fraction is the key reason for the significantly improved biaxial flexural strength, while higher mass fraction of HAP nanofibers tends to lead to bundles that cannot effectively

  2. Fabrication of Ni stamp with high aspect ratio, two-leveled, cylindrical microstructures using dry etching and electroplating

    DEFF Research Database (Denmark)

    Petersen, Ritika Singh; Keller, Stephan Sylvest; Hansen, Ole;

    2015-01-01

    We describe a process for the fabrication of a Ni stamp that is applied to the microstructuring of polymers by hot embossing. The target devices are microcontainers that have a potential application in oral drug delivery. Each container is a 3D, cylindrical, high aspect ratio microstructure...

  3. Highly Manufacturable Deep (Sub-Millimeter) Etching Enabled High Aspect Ratio Complex Geometry Lego-Like Silicon Electronics

    KAUST Repository

    Ghoneim, Mohamed T.

    2017-02-01

    A highly manufacturable deep reactive ion etching based process involving a hybrid soft/hard mask process technology shows high aspect ratio complex geometry Lego-like silicon electronics formation enabling free-form (physically flexible, stretchable, and reconfigurable) electronic systems.

  4. Fabrication of novel AFM probe with high-aspect-ratio ultra-sharp three-face silicon nitride tips

    NARCIS (Netherlands)

    Vermeer, Rolf; Berenschot, Erwin; Sarajlic, Edin; Tas, Niels; Jansen, Henri

    2014-01-01

    In this paper we present the wafer-scale fabrication of molded AFM probes with high aspect ratio ultra-sharp three-plane silicon nitride tips. Using (111) silicon wafers a dedicated process is developed to fabricate molds in the silicon wafer that have a flat triangular bottom surface enclosed by th

  5. High aspect ratio micro tool manufacturing for polymer replication using mu EDM of silicon, selective etching and electroforming

    DEFF Research Database (Denmark)

    Tosello, Guido; Bissacco, Giuliano; Tang, Peter Torben

    2008-01-01

    Mass fabrication of polymer micro components with high aspect ratio micro-structures requires high performance micro tools allowing the use of low cost replication processes such as micro injection moulding. In this regard an innovative process chain, based on a combination of micro electrical di...

  6. Magnetic field alignment of randomly oriented, high aspect ratio silicon microwires into vertically oriented arrays.

    Science.gov (United States)

    Beardslee, Joseph A; Sadtler, Bryce; Lewis, Nathan S

    2012-11-27

    External magnetic fields have been used to vertically align ensembles of silicon microwires coated with ferromagnetic nickel films. X-ray diffraction and image analysis techniques were used to quantify the degree of vertical orientation of the microwires. The degree of vertical alignment and the minimum field strength required for alignment were evaluated as a function of the wire length, coating thickness, magnetic history, and substrate surface properties. Nearly 100% of 100 μm long, 2 μm diameter, Si microwires that had been coated with 300 nm of Ni could be vertically aligned by a 300 G magnetic field. For wires ranging from 40 to 60 μm in length, as the length of the wire increased, a higher degree of alignment was observed at lower field strengths, consistent with an increase in the available magnetic torque. Microwires that had been exposed to a magnetic sweep up to 300 G remained magnetized and, therefore, aligned more readily during subsequent magnetic field alignment sweeps. Alignment of the Ni-coated Si microwires occurred at lower field strengths on hydrophilic Si substrates than on hydrophobic Si substrates. The magnetic field alignment approach provides a pathway for the directed assembly of solution-grown semiconductor wires into vertical arrays, with potential applications in solar cells as well as in other electronic devices that utilize nano- and microscale components as active elements.

  7. The field emission properties of high aspect ratio diamond nanocone arrays fabricated by focused ion beam milling

    Directory of Open Access Journals (Sweden)

    Z.L. Wang, Q. Wang, H.J. Li, J.J. Li, P. Xu, Q. Luo, A.Z. Jin, H.F. Yang and C.Z. Gu

    2005-01-01

    Full Text Available High aspect ratio diamond nanocone arrays are formed on freestanding diamond film by means of focused ion beam (FIB milling technology and hot-filament chemical vapor deposition (HFCVD method. The structure and phase purity of an individual diamond nanocone are characterized by scanning electron microscopy (SEM and micro-Raman spectroscopy. The result indicates that the diamond cones with high aspect ratio and small tip apex radius can be obtained by optimizing the parameters of FIB milling and diamond growth. The diamond nanocone arrays were also used to study the electron field emission properties and electric field shielding effect, finding high emission current density, low threshold and weak shielding effect, all attributable to the high field enhancement factor and suitable cone density of the diamond nanocone emitter

  8. High aspect ratio microstructuring of transparent dielectrics using femtosecond laser pulses: method for optimization of the machining throughput

    Science.gov (United States)

    Hendricks, F.; der Au, J. Aus; Matylitsky, V. V.

    2014-10-01

    High average power, high repetition rate femtosecond lasers with μJ pulse energies are increasingly used for material processing applications. The unique advantage of material processing with sub-picosecond lasers is efficient, fast and localized energy deposition, which leads to high ablation efficiency and accuracy in nearly all kinds of solid materials. This work focuses on the machining of high aspect ratio structures in transparent dielectrics, in particular chemically strengthened Xensation™ glass from Schott using multi-pass ablative material removal. For machining of high aspect ratio structures, among others needed for cutting applications, a novel method to determine the best relation between kerf width and number of overscans is presented. The importance of this relation for optimization of the machining throughput will be demonstrated.

  9. Framework to model neutral particle flux in convex high aspect ratio structures using one-dimensional radiosity

    Science.gov (United States)

    Manstetten, Paul; Filipovic, Lado; Hössinger, Andreas; Weinbub, Josef; Selberherr, Siegfried

    2017-02-01

    We present a computationally efficient framework to compute the neutral flux in high aspect ratio structures during three-dimensional plasma etching simulations. The framework is based on a one-dimensional radiosity approach and is applicable to simulations of convex rotationally symmetric holes and convex symmetric trenches with a constant cross-section. The framework is intended to replace the full three-dimensional simulation step required to calculate the neutral flux during plasma etching simulations. Especially for high aspect ratio structures, the computational effort, required to perform the full three-dimensional simulation of the neutral flux at the desired spatial resolution, conflicts with practical simulation time constraints. Our results are in agreement with those obtained by three-dimensional Monte Carlo based ray tracing simulations for various aspect ratios and convex geometries. With this framework we present a comprehensive analysis of the influence of the geometrical properties of high aspect ratio structures as well as of the particle sticking probability on the neutral particle flux.

  10. High aspect ratio iridescent three-dimensional metal–insulator–metal capacitors using atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Burke, Micheal, E-mail: micheal.burke@tyndall.ie; Blake, Alan; Djara, Vladimir; O' Connell, Dan; Povey, Ian M.; Cherkaoui, Karim; Monaghan, Scott; Scully, Jim; Murphy, Richard; Hurley, Paul K.; Pemble, Martyn E.; Quinn, Aidan J., E-mail: aidan.quinn@tyndall.ie [Tyndall National Institute, University College Cork, Cork (Ireland)

    2015-01-01

    The authors report on the structural and electrical properties of TiN/Al{sub 2}O{sub 3}/TiN metal–insulator–metal (MIM) capacitor structures in submicron three-dimensional (3D) trench geometries with an aspect ratio of ∼30. A simplified process route was employed where the three layers for the MIM stack were deposited using atomic layer deposition (ALD) in a single run at a process temperature of 250 °C. The TiN top and bottom electrodes were deposited via plasma-enhanced ALD using a tetrakis(dimethylamino)titanium precursor. 3D trench devices yielded capacitance densities of 36 fF/μm{sup 2} and quality factors >65 at low frequency (200 Hz), with low leakage current densities (<3 nA/cm{sup 2} at 1 V). These devices also show strong optical iridescence which, when combined with the covert embedded capacitance, show potential for system in package (SiP) anticounterfeiting applications.

  11. Subsonic and transonic pressure measurements on a high-aspect-ratio supercritical-wing model with oscillating control surfaces

    Science.gov (United States)

    Sandford, M. C.; Ricketts, R. H.; Watson, J. J.

    1981-01-01

    A high aspect ratio supercritical wing with oscillating control surfaces is described. The semispan wing model was instrumented with 252 static orifices and 164 in situ dynamic pressure gases for studying the effects of control surface position and sinusoidal motion on steady and unsteady pressures. Data from the present test (this is the second in a series of tests on this model) were obtained in the Langley Transonic Dynamics Tunnel at Mach numbers of 0.60 and 0.78 and are presented in tabular form.

  12. Designs and processes toward high-aspect-ratio nanostructures at the deep nanoscale: unconventional nanolithography and its applications

    Science.gov (United States)

    Lee, Sori; Park, Byeonghak; Kim, Jun Sik; Kim, Tae-il

    2016-11-01

    The patterning of high-resolution-featured deep-nanoscale structures with a high aspect ratio (AR) has received increasing attention in recent years as a promising technique for a wide range of applications, including electrical, optical, mechanical and biological systems. Despite extensive efforts to develop viable nanostructure fabrication processes, a superior technique enabling defect-free, high-resolution control over a large area is still required. In this review, we focus on recent important advances in the designs and processes of high-resolution nanostructures possessing a high AR, including hierarchical and 3D patterns. The unique applications of these materials are also discussed.

  13. Large-scale high aspect ratio Al-doped ZnO nanopillars arrays as anisotropic metamaterials

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Takayama, Osamu; Panah, Mohammad Esmail Aryaee

    2017-01-01

    High aspect ratio free-standing Al-doped ZnO (AZO) nanopillars and nanotubes were fabricated using a combination of advanced reactive ion etching and atomic layer deposition (ALD) techniques. Prior to the pillar and tube fabrication, AZO layers were grown on flat silicon and glass substrates...... plasma frequency. During pillar fabrication, AZO conformally passivates the silicon template, which is characteristic of typical ALD growth conditions. The last step of fabrication is heavily dependent on the selective chemistry of the SF6 plasma. It was shown that silicon between AZO structures can...

  14. Shrink film patterning by craft cutter: complete plastic chips with high resolution/high-aspect ratio channel.

    Science.gov (United States)

    Taylor, Douglas; Dyer, David; Lew, Valerie; Khine, Michelle

    2010-09-21

    This paper presents a rapid, ultra-low-cost approach to fabricate microfluidic devices using a polyolefin shrink film and a digital craft cutter. The shrinking process (with a 95% reduction in area) results in relatively uniform and consistent microfluidic channels with smooth surfaces, vertical sidewalls, and high aspect ratio channels with lateral resolutions well beyond the tool used to cut them. The thermal bonding of the layers results in strongly bonded devices. Complex microfluidic designs are easily designed on the fly and protein assays are also readily integrated into the device. Full device characterization including channel consistency, optical properties, and bonding strength are assessed in this technical note.

  15. Real time ablation rate measurement during high aspect-ratio hole drilling with a 120-ps fiber laser.

    Science.gov (United States)

    Mezzapesa, Francesco P; Sibillano, Teresa; Di Niso, Francesca; Ancona, Antonio; Lugarà, Pietro M; Dabbicco, Maurizio; Scamarcio, Gaetano

    2012-01-02

    We report on the instantaneous detection of the ablation rate as a function of depth during ultrafast microdrilling of metal targets. The displacement of the ablation front has been measured with a sub-wavelength resolution using an all-optical sensor based on the laser diode self-mixing interferometry. The time dependence of the laser ablation process within the depth of aluminum and stainless steel targets has been investigated to study the evolution of the material removal rate in high aspect-ratio micromachined holes.

  16. Fabrication of high-aspect-ratio polymer microstructures and hierarchical textures using carbon nanotube composite master molds.

    Science.gov (United States)

    Copic, Davor; Park, Sei Jin; Tawfick, Sameh; De Volder, Michael F L; Hart, A John

    2011-05-21

    Scalable and cost effective patterning of polymer structures and their surface textures is essential to engineer material properties such as liquid wetting and dry adhesion, and to design artificial biological interfaces. Further, fabrication of high-aspect-ratio microstructures often requires controlled deep-etching methods or high-intensity exposure. We demonstrate that carbon nanotube (CNT) composites can be used as master molds for fabrication of high-aspect-ratio polymer microstructures having anisotropic nanoscale textures. The master molds are made by growth of vertically aligned CNT patterns, capillary densification of the CNTs using organic solvents, and capillary-driven infiltration of the CNT structures with SU-8. The composite master structures are then replicated in SU-8 using standard PDMS transfer molding methods. By this process, we fabricated a library of replicas including vertical micro-pillars, honeycomb lattices with sub-micron wall thickness and aspect ratios exceeding 50:1, and microwells with sloped sidewalls. This process enables batch manufacturing of polymer features that capture complex nanoscale shapes and textures, while requiring only optical lithography and conventional thermal processing.

  17. Nanoimprinting ultrasmall and high-aspect-ratio structures by using rubber-toughened UV cured epoxy resist

    Science.gov (United States)

    Shin, Young Jae; Wu, Yi-Kuei; Guo, L. Jay

    2013-06-01

    A simple and robust scheme is proposed for the fabrication of nanoscale (20 nm line width) and high-aspect-ratio (9:1) structures by using modulus-tunable UV curable epoxy resists. Additionally, the ability to control the Young’s modulus of the imprinted material from hard to rigiflex using these epoxy resists is demonstrated. The physical properties of the new epoxy resists were controlled by adjusting the ratio of bisphenol F-type epoxy resin and acrylonitrile-butadiene rubber-based epoxy resin in the formulation of the resist. The mechanical properties of the resist were tuned to obtain various aspect ratios as well as mold flexibility for conformal contact over non-planar surfaces and large areas. In order to reduce the line width of the imprinted patterns, a process to conformally coat the mold structure by atomic layer deposition of alumina was also developed. Narrow lines with high-aspect-ratio features and with very low defect density were achieved via the new approach and the high mechanical strength of the new resist formulation.

  18. The Space-Time CESE Method Applied to Viscous Flow Computations with High-Aspect Ratio Triangular or Tetrahedral Meshes

    Science.gov (United States)

    Chang, Chau-Lyan; Venkatachari, Balaji

    2016-11-01

    Flow physics near the viscous wall is intrinsically anisotropic in nature, namely, the gradient along the wall normal direction is much larger than that along the other two orthogonal directions parallel to the surface. Accordingly, high aspect ratio meshes are employed near the viscous wall to capture the physics and maintain low grid count. While such arrangement works fine for structured-grid based methods with dimensional splitting that handles derivatives in each direction separately, similar treatments often lead to numerical instability for unstructured-mesh based methods when triangular or tetrahedral meshes are used. The non-splitting treatment of near-wall gradients for high-aspect ratio triangular or tetrahedral elements results in an ill-conditioned linear system of equations that is closely related to the numerical instability. Altering the side lengths of the near wall tetrahedrons in the gradient calculations would make the system less unstable but more dissipative. This research presents recent progress in applying numerical dissipation control in the space-time conservation element solution element (CESE) method to reduce or alleviate the above-mentioned instability while maintaining reasonable solution accuracy.

  19. Single-pulse femtosecond laser Bessel beams drilling of high-aspect-ratio microholes based on electron dynamics control

    Science.gov (United States)

    Zhao, Weiwei; Li, Xiaowei; Xia, Bo; Yan, Xueliang; Han, Weina; Lu, Yongfeng; Jiang, Lan

    2014-11-01

    Microholes drilling has attracted extensive research efforts for its broad applications in photonics, microfluidics, optical fibers and many other fields. A femtosecond (fs) laser is a promising tool for high-precision materials processing with reduced recast/microcracks and minimized heat affected zones. But there remain many challenges in hole drilling using conventional fs laser with Gaussian beams, such as low aspect ratio and taper effects. We report small-diameter and high-aspect-ratio microholes with taper free drilling in PMMA (polymethyl methacrylate) using single-pulse fs laser Bessel beams. Axicon is used to transform Gaussian beams into Bessel beams, which then irradiate in the sample by a telescope consisting of plano-convex lens and microscope objective. Using this technique, we enhance the aspect ratio of microholes by 55 times as compared with Gaussian beams. We attribute this high aspect ratio and high quality microholes formation to the unique spatial intensity distribution and propagation stability of Bessel beams, which can effectively adjust the transient localized electron density distribution leading to a long and uniform localized-interacted zone. By using the optimized pulse energy and focal depth position, the microholes diameter ranges between 1.4-2.1 μm and the aspect ratio can exceed 460. This efficient technique is of great potentials for fabrication of microphotonics devices and microfluidics.

  20. High fidelity replication of surface texture and geometric form of a high aspect ratio aerodynamic test component

    Science.gov (United States)

    Walton, Karl; Fleming, Leigh; Goodhand, Martin; Racasan, Radu; Zeng, Wenhan

    2016-06-01

    This paper details, assesses and validates a technique for the replication of a titanium wind tunnel test aerofoil in polyurethane resin. Existing resin replication techniques are adapted to overcome the technical difficulties associated with casting a high aspect ratio component. The technique is shown to have high replication fidelity over all important length-scales. The blade chord was accurate to 0.02%, and the maximum blade thickness was accurate to 2.5%. Important spatial and amplitude areal surface texture parameter were accurate to within 2%. Compared to an existing similar system using correlation areal parameters the current technique is shown to have lower fidelity and this difference is discussed. The current technique was developed for the measurement of boundary layer flow ‘laminar to turbulent’ transition for gas turbine compressor blade profiles and this application is illustrated.

  1. Single phase flow characteristics of FC-72 and ethanol in high aspect ratio rectangular mini- and micro-channels

    Science.gov (United States)

    Wang, Yuan; Wang, Zhen-guo

    2016-11-01

    Single phase flow friction factor of FC-72 and ethanol in mini-and micro-channels are experimentally investigated in the present study. High aspect ratio3 rectangular channels are selected, the hydraulic diameters of which are 571 µm, 762 µm and 1454 µm, and the aspect ratios are 20, 20 and 10 respectively. Degassed ethanol and FC-72 are used as working fluids. All the friction factors acquired in the 571 µm and 762 µm channels agree with the conventional friction theory within  ±20%-±25%. In the 1454 µm channel, however, deviations from the conventional theory occur and a modified empirical correlation of friction factor as a function of Reynolds number is proposed. Early transition from laminar to transitional flow is captured. Besides, effects of liquid physical properties are discussed. Lower viscosity and higher liquid density are responsible for the higher friction factor of FC-72. The influence of liquid properties weakens as the Reynolds number increases.

  2. Hydrothermal Synthesis of ZnO Structures Formed by High-Aspect-Ratio Nanowires for Acetone Detection.

    Science.gov (United States)

    Cao, Zhen; Wang, Yong; Li, Zhanguo; Yu, Naisen

    2016-12-01

    Snowflake-like ZnO structures originating from self-assembled nanowires were prepared by a low-temperature aqueous solution method. The as-grown hierarchical ZnO structures were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FESEM). The results showed that the snowflake-like ZnO structures were composed of high-aspect-ratio nanowires. Furthermore, gas-sensing properties to various testing gases of 10 and 50 ppm were measured, which confirms that the ZnO structures were of good selectivity and response to acetone and could serve for acetone sensor to detect low-concentration acetone.

  3. The fluid mechanics of a high aspect ratio slot with an impressed pressure gradient and secondary injection

    Science.gov (United States)

    Sobanik, John Bertram

    1993-01-01

    A high aspect ratio slot flow (which emulates the gas leakage path in a gas turbine engine outer turbine air seal) is studied by use of a high aspect ratio slot using water as the working fluid. The cross section of the geometry is similar to a 'T', the slot being the vertical stroke and the main flow being the cross bar. A pressure gradient in the axial direction is created by blocking the main flow at a discreet location with an orifice plate (or blade tip simulator), located above the slot. Seven individually metered secondary flow injectors are located periodically along the bottom of the wall of the slot. Two slot widths, 1/8 and 1/4 inch, were investigated for length to width aspect ratios of 384 and 192 and height to width aspect ratios 33.2 and 16.6 respectively. Orifice plate pressure drops sufficient to give Reynolds numbers based upon half width of the slot, without secondary injection turned on, of 2350 and 4700 in the 1/8 inch slot and 4700 and 9400 in the 1/4 inch slot were run. Various secondary injection scenarios were added to the flow, the cases most studied being the no-injection and the all injectors flowing equal mass rates. Total injection rates for all seven injectors of 3.78 and 7.56 slot volumes per second were run. Laser velocimetry data and flow visualization pictures using fluorescein dye in the secondary flow are compared with computational results form the TEACH 3-D computer code. Major features and trends of the flow are captured by the computational model. Recommendations for further improvement of the numerical accuracy involves modification of the TEACH 3-D code to allow the 'slip condition' on all confining boundaries of the flow, or using a code which permits the 'slip condition' on all boundaries as a built-in option.

  4. Fabrication of high aspect ratio TiO2 and Al2O3 nanogratings by atomic layer deposition

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Takayama, Osamu; Michael-Lindhard, Jonas

    2016-01-01

    followed by ALD of TiO2 or Al2O3. Then, the template was etched away using SF6 in an inductively coupled plasma tool, which resulted in the formation of isolated ALD coatings, thereby achieving high aspect ratio grating structures. SF6 plasma removes silicon selectively without any observable influence......The authors report on the fabrication of TiO2 and Al2O3 nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching...... in a gradual change in the pitch value of the structures. The pitch on top of the gratings is 400 nm, and it gradually reduces to 200 nm at the bottom. The form of the bending can be reshaped by Arþ ion beam etching. The chemical purity of the ALD grown materials was analyzed by x-ray photoelectron...

  5. Ionic transport through sub-10 nm diameter hydrophobic high-aspect ratio nanopores: experiment, theory and simulation

    Science.gov (United States)

    Balme, Sébastien; Picaud, Fabien; Manghi, Manoel; Palmeri, John; Bechelany, Mikhael; Cabello-Aguilar, Simon; Abou-Chaaya, Adib; Miele, Philippe; Balanzat, Emmanuel; Janot, Jean Marc

    2015-01-01

    Fundamental understanding of ionic transport at the nanoscale is essential for developing biosensors based on nanopore technology and new generation high-performance nanofiltration membranes for separation and purification applications. We study here ionic transport through single putatively neutral hydrophobic nanopores with high aspect ratio (of length L = 6 μm with diameters ranging from 1 to 10 nm) and with a well controlled cylindrical geometry. We develop a detailed hybrid mesoscopic theoretical approach for the electrolyte conductivity inside nanopores, which considers explicitly ion advection by electro-osmotic flow and possible flow slip at the pore surface. By fitting the experimental conductance data we show that for nanopore diameters greater than 4 nm a constant weak surface charge density of about 10−2 C m−2 needs to be incorporated in the model to account for conductance plateaus of a few pico-siemens at low salt concentrations. For tighter nanopores, our analysis leads to a higher surface charge density, which can be attributed to a modification of ion solvation structure close to the pore surface, as observed in the molecular dynamics simulations we performed. PMID:26036687

  6. Direct investigation of the ablation rate evolution during laser drilling of high-aspect-ratio micro-holes

    Science.gov (United States)

    Mezzapesa, Francesco P.; Sibillano, Teresa; Columbo, Lorenzo L.; Di Niso, Francesca; Ancona, Antonio; Dabbicco, Maurizio; De Lucia, Francesco; Lugarà, Pietro M.; Scamarcio, Gaetano

    2012-03-01

    The recent development of ultrafast laser ablation technology in precision micromachining has dramatically increased the demand for reliable and real-time detection systems to characterize the material removal process. In particular, the laser percussion drilling of metals is lacking of non-invasive techniques able to monitor into the depth the spatial- and time-dependent evolution all through the ablation process. To understand the physical interaction between bulk material and high-energy light beam, accurate in-situ measurements of process parameters such as the penetration depth and the removal rate are crucial. We report on direct real time measurements of the ablation front displacement and the removal rate during ultrafast laser percussion drilling of metals by implementing a contactless sensing technique based on optical feedback interferometry. High aspect ratio micro-holes were drilled onto steel plates with different thermal properties (AISI 1095 and AISI 301) and Aluminum samples using 120-ps/110-kHz pulses delivered by a microchip laser fiber amplifier. Percussion drilling experiments have been performed by coaxially aligning the diode laser probe beam with the ablating laser. The displacement of the penetration front was instantaneously measured during the process with a resolution of 0.41 μm by analyzing the sawtooth-like induced modulation of the interferometric signal out of the detector system.

  7. Optimization of laser energy deposition for single-shot high aspect-ratio microstructuring of thick BK7 glass

    Energy Technology Data Exchange (ETDEWEB)

    Garzillo, Valerio; Grigutis, Robertas [Dipartimento di Scienza e Alta Tecnologia, University of Insubria, Via Valleggio 11, I-22100 Como (Italy); Jukna, Vytautas [Centre de Physique Theorique, CNRS, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau (France); LOA, ENSTA-ParisTech, CNRS, Ecole Polytechnique, Université Paris Saclay, F-91762 Palaiseau (France); Couairon, Arnaud [Centre de Physique Theorique, CNRS, Ecole Polytechnique, Université Paris-Saclay, F-91128 Palaiseau (France); Di Trapani, Paolo [Dipartimento di Scienza e Alta Tecnologia, University of Insubria and CNISM UdR Como, Via Valleggio 11, I-22100 Como (Italy); Jedrkiewicz, Ottavia, E-mail: ottavia.jedrkiewicz@ifn.cnr.it [Istituto di Fotonica e Nanotecnologie, CNR and CNISM UdR Como, Via Valleggio 11, I-22100 Como (Italy)

    2016-07-07

    We investigate the generation of high aspect ratio microstructures across 0.7 mm thick glass by means of single shot Bessel beam laser direct writing. We study the effect on the photoinscription of the cone angle, as well as of the energy and duration of the ultrashort laser pulse. The aim of the study is to optimize the parameters for the writing of a regular microstructure due to index modification along the whole sample thickness. By using a spectrally resolved single pulse transmission diagnostics at the output surface of the glass, we correlate the single shot material modification with observations of the absorption in different portions of the retrieved spectra, and with the absence or presence of spectral modulation. Numerical simulations of the evolution of the Bessel pulse intensity and of the energy deposition inside the sample help us interpret the experimental results that suggest to use picosecond pulses for an efficient and more regular energy deposition. Picosecond pulses take advantage of nonlinear plasma absorption and avoid temporal dynamics effects which can compromise the stationarity of the Bessel beam propagation.

  8. Optimization of laser energy deposition for single-shot high aspect-ratio microstructuring of thick BK7 glass

    Science.gov (United States)

    Garzillo, Valerio; Jukna, Vytautas; Couairon, Arnaud; Grigutis, Robertas; Di Trapani, Paolo; Jedrkiewicz, Ottavia

    2016-07-01

    We investigate the generation of high aspect ratio microstructures across 0.7 mm thick glass by means of single shot Bessel beam laser direct writing. We study the effect on the photoinscription of the cone angle, as well as of the energy and duration of the ultrashort laser pulse. The aim of the study is to optimize the parameters for the writing of a regular microstructure due to index modification along the whole sample thickness. By using a spectrally resolved single pulse transmission diagnostics at the output surface of the glass, we correlate the single shot material modification with observations of the absorption in different portions of the retrieved spectra, and with the absence or presence of spectral modulation. Numerical simulations of the evolution of the Bessel pulse intensity and of the energy deposition inside the sample help us interpret the experimental results that suggest to use picosecond pulses for an efficient and more regular energy deposition. Picosecond pulses take advantage of nonlinear plasma absorption and avoid temporal dynamics effects which can compromise the stationarity of the Bessel beam propagation.

  9. Ionic transport through sub-10 nm diameter hydrophobic high-aspect ratio nanopores: experiment, theory and simulation.

    Science.gov (United States)

    Balme, Sébastien; Picaud, Fabien; Manghi, Manoel; Palmeri, John; Bechelany, Mikhael; Cabello-Aguilar, Simon; Abou-Chaaya, Adib; Miele, Philippe; Balanzat, Emmanuel; Janot, Jean Marc

    2015-06-03

    Fundamental understanding of ionic transport at the nanoscale is essential for developing biosensors based on nanopore technology and new generation high-performance nanofiltration membranes for separation and purification applications. We study here ionic transport through single putatively neutral hydrophobic nanopores with high aspect ratio (of length L = 6 μm with diameters ranging from 1 to 10 nm) and with a well controlled cylindrical geometry. We develop a detailed hybrid mesoscopic theoretical approach for the electrolyte conductivity inside nanopores, which considers explicitly ion advection by electro-osmotic flow and possible flow slip at the pore surface. By fitting the experimental conductance data we show that for nanopore diameters greater than 4 nm a constant weak surface charge density of about 10(-2) C m(-2) needs to be incorporated in the model to account for conductance plateaus of a few pico-siemens at low salt concentrations. For tighter nanopores, our analysis leads to a higher surface charge density, which can be attributed to a modification of ion solvation structure close to the pore surface, as observed in the molecular dynamics simulations we performed.

  10. Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

    Science.gov (United States)

    Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

    2017-07-01

    Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

  11. Sharp-Tip Silver Nanowires Mounted on Cantilevers for High-Aspect-Ratio High-Resolution Imaging.

    Science.gov (United States)

    Ma, Xuezhi; Zhu, Yangzhi; Kim, Sanggon; Liu, Qiushi; Byrley, Peter; Wei, Yang; Zhang, Jin; Jiang, Kaili; Fan, Shoushan; Yan, Ruoxue; Liu, Ming

    2016-11-09

    Despite many efforts to fabricate high-aspect-ratio atomic force microscopy (HAR-AFM) probes for high-fidelity, high-resolution topographical imaging of three-dimensional (3D) nanostructured surfaces, current HAR probes still suffer from unsatisfactory performance, low wear-resistivity, and extravagant prices. The primary objective of this work is to demonstrate a novel design of a high-resolution (HR) HAR AFM probe, which is fabricated through a reliable, cost-efficient benchtop process to precisely implant a single ultrasharp metallic nanowire on a standard AFM cantilever probe. The force-displacement curve indicated that the HAR-HR probe is robust against buckling and bending up to 150 nN. The probes were tested on polymer trenches, showing a much better image fidelity when compared with standard silicon tips. The lateral resolution, when scanning a rough metal thin film and single-walled carbon nanotubes (SW-CNTs), was found to be better than 8 nm. Finally, stable imaging quality in tapping mode was demonstrated for at least 15 continuous scans indicating high resistance to wear. These results demonstrate a reliable benchtop fabrication technique toward metallic HAR-HR AFM probes with performance parallel or exceeding that of commercial HAR probes, yet at a fraction of their cost.

  12. Fabrication of high aspect ratio TiO{sub 2} and Al{sub 2}O{sub 3} nanogratings by atomic layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Shkondin, Evgeniy, E-mail: eves@fotonik.dtu.dk [Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby, Denmark and Danish National Center for Micro- and Nanofabrication (DANCHIP), DK-2800 Kongens Lyngby (Denmark); Takayama, Osamu; Lavrinenko, Andrei V. [Department of Photonics Engineering, Technical University of Denmark, DK-2800 Kongens Lyngby (Denmark); Lindhard, Jonas Michael; Larsen, Pernille Voss; Mar, Mikkel Dysseholm; Jensen, Flemming [Danish National Center for Micro- and Nanofabrication (DANCHIP), DK-2800 Kongens Lyngby (Denmark)

    2016-05-15

    The authors report on the fabrication of TiO{sub 2} and Al{sub 2}O{sub 3} nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching followed by ALD of TiO{sub 2} or Al{sub 2}O{sub 3}. Then, the template was etched away using SF{sub 6} in an inductively coupled plasma tool, which resulted in the formation of isolated ALD coatings, thereby achieving high aspect ratio grating structures. SF{sub 6} plasma removes silicon selectively without any observable influence on TiO{sub 2} or Al{sub 2}O{sub 3}, thus revealing high selectivity throughout the fabrication. Scanning electron microscopy was used to analyze every fabrication step. Due to nonreleased stress in the ALD coatings, the top parts of the gratings were observed to bend inward as the Si template was removed, thus resulting in a gradual change in the pitch value of the structures. The pitch on top of the gratings is 400 nm, and it gradually reduces to 200 nm at the bottom. The form of the bending can be reshaped by Ar{sup +} ion beam etching. The chemical purity of the ALD grown materials was analyzed by x-ray photoelectron spectroscopy. The approach presented opens the possibility to fabricate high quality optical metamaterials and functional nanostructures.

  13. Aerodynamic Properties of Rough Surfaces with High Aspect-Ratio Roughness Elements: Effect of Aspect Ratio and Arrangements

    Science.gov (United States)

    Sadique, Jasim; Yang, Xiang I. A.; Meneveau, Charles; Mittal, Rajat

    2017-05-01

    We examine the effect of varying roughness-element aspect ratio on the mean velocity distributions of turbulent flow over arrays of rectangular-prism-shaped elements. Large-eddy simulations (LES) in conjunction with a sharp-interface immersed boundary method are used to simulate spatially-growing turbulent boundary layers over these rough surfaces. Arrays of aligned and staggered rectangular roughness elements with aspect ratio >1 are considered. First the temporally- and spatially-averaged velocity profiles are used to illustrate the aspect-ratio effects. For aligned prisms, the roughness length (z_o) and the friction velocity (u_*) increase initially with an increase in the roughness-element aspect ratio, until the values reach a plateau at a particular aspect ratio. The exact value of this aspect ratio depends on the coverage density. Further increase in the aspect ratio changes neither z_o, u_* nor the bulk flow above the roughness elements. For the staggered cases, z_o and u_* continue to increase for the surface coverage density and the aspect ratios investigated. To model the flow response to variations in roughness aspect ratio, we turn to a previously developed phenomenological volumetric sheltering model (Yang et al., in J Fluid Mech 789:127-165, 2016), which was intended for low to moderate aspect-ratio roughness elements. Here, we extend this model to account for high aspect-ratio roughness elements. We find that for aligned cases, the model predicts strong mutual sheltering among the roughness elements, while the effect is much weaker for staggered cases. The model-predicted z_o and u_* agree well with the LES results. Results show that the model, which takes explicit account of the mutual sheltering effects, provides a rapid and reliable prediction method of roughness effects in turbulent boundary-layer flows over arrays of rectangular-prism roughness elements.

  14. pH-Dependent Toxicity of High Aspect Ratio ZnO Nanowires in Macrophages Due to Intracellular Dissolution

    KAUST Repository

    H. Müller, Karin

    2010-11-23

    High-aspect ratio ZnO nanowires have become one of the most promising products in the nanosciences within the past few years with a multitude of applications at the interface of optics and electronics. The interaction of zinc with cells and organisms is complex, with both deficiency and excess causing severe effects. The emerging significance of zinc for many cellular processes makes it imperative to investigate the biological safety of ZnO nanowires in order to guarantee their safe economic exploitation. In this study, ZnO nanowires were found to be toxic to human monocyte macrophages (HMMs) at similar concentrations as ZnCl2. Confocal microscopy on live cells confirmed a rise in intracellular Zn2+ concentrations prior to cell death. In vitro, ZnO nanowires dissolved very rapidly in a simulated body fluid of lysosomal pH, whereas they were comparatively stable at extracellular pH. Bright-field transmission electron microscopy (TEM) showed a rapid macrophage uptake of ZnO nanowire aggregates by phagocytosis. Nanowire dissolution occurred within membrane-bound compartments, triggered by the acidic pH of the lysosomes. ZnO nanowire dissolution was confirmed by scanning electron microscopy/energy-dispersive X-ray spectrometry. Deposition of electron-dense material throughout the ZnO nanowire structures observed by TEM could indicate adsorption of cellular components onto the wires or localized zinc-induced protein precipitation. Our study demonstrates that ZnO nanowire toxicity in HMMs is due to pH-triggered, intracellular release of ionic Zn2+ rather than the high-aspect nature of the wires. Cell death had features of necrosis as well as apoptosis, with mitochondria displaying severe structural changes. The implications of these findings for the application of ZnO nanowires are discussed. © 2010 American Chemical Society.

  15. FFT-impedance spectroscopy analysis of the growth of magnetic metal nanowires in ultra-high aspect ratio InP membranes

    Science.gov (United States)

    Gerngross, M.-D.; Carstensen, J.; Föll, H.; Adelung, R.

    2016-01-01

    This paper reports on the characterization of the electrochemical growth process of magnetic nanowires in ultra-high-aspect ratio InP membranes via in situ fast Fourier transform impedance spectroscopy in a typical frequency range from 75 Hz to 18.5 kHz. The measured impedance data from the Ni, Co, and FeCo can be very well fitted using the same electric equivalent circuit consisting of a series resistance in serial connection to an RC-element and a Maxwell element. The impedance data clearly indicate the similarities in the growth behavior of Ni, Co and FeCo nanowires in ultra-high aspect ratio InP membranes—the beneficial impact of boric acid on the metal deposition in ultra-high aspect ratio membranes and the diffusion limitation of boric acid, as well as differences such as passivation or side reactions.

  16. Numerical design of X-ray tabletop Talbot interferometer using polycapillary optics as two-dimensional gratings with high aspect ratio

    Science.gov (United States)

    Sun, Weiyuan; Liu, Zhiguo; Sun, Tianxi; Sun, Xuepeng; Li, Fangzuo; Jiang, Bowen; Ding, Xunliang

    2015-12-01

    The polycapillary optics was proposed to be used as two-dimensional X-ray gratings with high aspect ratios for high energy X-rays. The X-ray Talbot interferometer was designed numerically using the polycapillary X-ray gratings and a conventional X-ray source. The simulation showed that it was available to get a high-aspect-ratio pattern of the polycapillary X-ray gratings for higher energies than 60 keV. Moreover, this design of polycapillary gratings decreased the requirement for high power of the X-ray source. The polycapillary X-ray gratings had potential applications in X-ray imaging technology for medical fields, industrial nondestructive tests, public security, physical science, chemical analysis, life science, nanoscience biology and energy science.

  17. Sharp high-aspect-ratio AFM tips fabricated by a combination of deep reactive ion etching and focused ion beam techniques.

    Science.gov (United States)

    Caballero, David; Villanueva, Guillermo; Plaza, Jose Antonio; Mills, Christopher A; Samitier, Josep; Errachid, Abdelhamid

    2010-01-01

    The shape and dimensions of an atomic force microscope tip are crucial factors to obtain high resolution images at the nanoscale. When measuring samples with narrow trenches, inclined sidewalls near 90 degrees or nanoscaled structures, standard silicon atomic force microscopy (AFM) tips do not provide satisfactory results. We have combined deep reactive ion etching (DRIE) and focused ion beam (FIB) lithography techniques in order to produce probes with sharp rocket-shaped silicon AFM tips for high resolution imaging. The cantilevers were shaped and the bulk micromachining was performed using the same DRIE equipment. To improve the tip aspect ratio we used FIB nanolithography technique. The tips were tested on narrow silicon trenches and over biological samples showing a better resolution when compared with standard AFM tips, which enables nanocharacterization and nanometrology of high-aspect-ratio structures and nanoscaled biological elements to be completed, and provides an alternative to commercial high aspect ratio AFM tips.

  18. Electrodeposition of Gold to Conformally Fill High Aspect Ratio Nanometric Silicon Grating Trenches: A Comparison of Pulsed and Direct Current Protocols

    OpenAIRE

    Znati, Sami A.; Chedid, Nicholas; Miao, Houxun; Chen,Lei; Bennett, Eric E.; Wen, Han

    2015-01-01

    Filling high-aspect-ratio trenches with gold is a frequent requirement in the fabrication of x-ray optics as well as micro-electronic components and other fabrication processes. Conformal electrodeposition of gold in sub-micron-width silicon trenches with an aspect ratio greater than 35 over a grating area of several square centimeters is challenging and has not been described in the literature previously. A comparison of pulsed plating and constant current plating led to a gold electroplatin...

  19. Electrically conducting, ultra-sharp, high aspect-ratio probes for AFM fabricated by electron-beam-induced deposition of platinum

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Jason, E-mail: jason.brown@physics.ox.ac.uk [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Paul; Ramanujan, Chandra S; Sharp, David N [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Torimitsu, Keiichi [NTT Basic Research Laboratories, NTT Corporation, Atsugi, 243-0198 (Japan); Ryan, John F [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom)

    2013-10-15

    We report on the fabrication of electrically conducting, ultra-sharp, high-aspect ratio probes for atomic force microscopy by electron-beam-induced deposition of platinum. Probes of 4.0 ±1.0 nm radius-of-curvature are routinely produced with high repeatability and near-100% yield. Contact-mode topographical imaging of the granular nature of a sputtered gold surface is used to assess the imaging performance of the probes, and the derived power spectral density plots are used to quantify the enhanced sensitivity as a function of spatial frequency. The ability of the probes to reproduce high aspect-ratio features is illustrated by imaging a close-packed array of nanospheres. The electrical resistance of the probes is measured to be of order 100 kΩ. - Highlights: • Electrically conducting, ultra-sharp, high aspect-ratio probes for AFM with radius-of-curvature 4.0±±1.0 nm. • AFM probe fabrication by electron-beam-induced deposition of platinum. • Enhanced spatial resolution demonstrated through AFM of sputtered gold grains. • AFM imaging of deep clefts and recesses on a close-packed array of nanospheres.

  20. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    Science.gov (United States)

    2014-01-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor (RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires. PMID:25050088

  1. Electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes: FFT-impedance spectroscopy of the growth process and magnetic properties

    Science.gov (United States)

    Gerngross, Mark-Daniel; Carstensen, Jürgen; Föll, Helmut

    2014-06-01

    The electrochemical growth of Co nanowires in ultra-high aspect ratio InP membranes has been investigated by fast Fourier transform-impedance spectroscopy (FFT-IS) in the frequency range from 75 Hz to 18.5 kHz. The impedance data could be fitted very well using an electric circuit equivalent model with a series resistance connected in series to a simple resistor-capacitor ( RC) element and a Maxwell element. Based on the impedance data, the Co deposition in ultra-high aspect ratio InP membranes can be divided into two different Co deposition processes. The corresponding share of each process on the overall Co deposition can be determined directly from the transfer resistances of the two processes. The impedance data clearly show the beneficial impact of boric acid on the Co deposition and also indicate a diffusion limitation of boric acid in ultra-high aspect ratio InP membranes. The grown Co nanowires are polycrystalline with a very small grain size. They show a narrow hysteresis loop with a preferential orientation of the easy magnetization direction along the long nanowire axis due to the arising shape anisotropy of the Co nanowires.

  2. Zero-Bias-Field Spin Torque Induced Oscillation of a Vortex Core in a Magnetic Junction Nano-Pillar with High Magnetoresistance Ratio

    Science.gov (United States)

    Tsukahara, Hiroshi; Imamura, Hiroshi

    2017-06-01

    Spin torque induced dynamics of a vortex core in a magnetic junction nano-pillar is studied by paying special attention to the effect of the in-plane current due to the spatial variation of magnetization. We calculated the motion of the vortex core and the current distribution simultaneously. The current has a considerable in-plane component within the magnetic junction nano-pillar with a high magnetoresistance ratio, and the stable rotational motion of the vortex core is caused by a spin transfer torque from the in-plane current without a bias field when the magnetoresistance ratio is over 180%. It is shown that the zero-bias-field oscillation of the vortex core can be maintained if the magnetoresistance ratio and strength of the in-plane current exceed a certain critical value.

  3. High aspect ratio, nanostructured, platinum based electrodes for proton exchange membrane fuel cells: Design, development and ionic conduction of the proposed structures

    Science.gov (United States)

    Paschos, Odysseas

    High aspect ratio nanostructures can provide substantial benefits when used as fuel cell electrodes since they can alleviate problems associated with conventional carbon supports. In this work the potential of incorporating high aspect ratio nanostructures as electrodes for fuel cells was studied. Moreover, a model was created that demonstrated the potential for the nanostructures to yield high performance. The creation of Pt nanorods using anodic aluminum oxide templates was investigated and experiments showed complete utilization of the electrodes surface area. However, the Pt nanorod structure was found to not be effective in terms of Pt mass utilization, since only the outer surface of the rod is utilized for catalytic activity. An alternate method was developed to coat (with Pt) high aspect ratio structures made from a cost-effective support material. Thus far, methods used to conformally coat Pt either cannot be used directly on several materials or tend not to be cost-effective. A non-vacuum method based on an Aerosol Assisted Deposition (AAD) technique was developed and optimized. Initial experiments showed feasibility of the technique to coat a large variety of substrates. Dimensions of the particles were controlled by the deposition parameters and ranged from 4 nm up to several hundreds of nm in diameter. Experiments where Pt nanoparticles were deposited on gas diffusion layer substrates, showed higher electrochemical performance compared to commercial catalyst. The need for electrolyte coating on the high aspect ratio structures was also investigated. Initial experiments were performed by splitting an MEA in half and using an intermediate Pt film. These experiments showed that ionic conduction on Pt surface is possible. Moreover these studies indicated that ionic conduction on Pt could result from hydrophilic groups that can exist on its surface. Since these groups can either be physisorbed due to presence of water or chemisorbed on the oxidized Pt

  4. Solution Process Synthesis of High Aspect Ratio ZnO Nanorods on Electrode Surface for Sensitive Electrochemical Detection of Uric Acid

    Science.gov (United States)

    Ahmad, Rafiq; Tripathy, Nirmalya; Ahn, Min-Sang; Hahn, Yoon-Bong

    2017-04-01

    This study demonstrates a highly stable, selective and sensitive uric acid (UA) biosensor based on high aspect ratio zinc oxide nanorods (ZNRs) vertical grown on electrode surface via a simple one-step low temperature solution route. Uricase enzyme was immobilized on the ZNRs followed by Nafion covering to fabricate UA sensing electrodes (Nafion/Uricase-ZNRs/Ag). The fabricated electrodes showed enhanced performance with attractive analytical response, such as a high sensitivity of 239.67 μA cm-2 mM-1 in wide-linear range (0.01-4.56 mM), rapid response time (~3 s), low detection limit (5 nM), and low value of apparent Michaelis-Menten constant (Kmapp, 0.025 mM). In addition, selectivity, reproducibility and long-term storage stability of biosensor was also demonstrated. These results can be attributed to the high aspect ratio of vertically grown ZNRs which provides high surface area leading to enhanced enzyme immobilization, high electrocatalytic activity, and direct electron transfer during electrochemical detection of UA. We expect that this biosensor platform will be advantageous to fabricate ultrasensitive, robust, low-cost sensing device for numerous analyte detection.

  5. Protein-enabled layer-by-layer syntheses of aligned, porous-wall, high-aspect-ratio TiO{sub 2} nanotube arrays

    Energy Technology Data Exchange (ETDEWEB)

    Berrigan, John D.; Cai, Ye; Sandhage, Kenneth H. [School of Materials Science and Engineering, Air Force Center of Excellence on Bio-Nano-Enabled Inorganic/Organic Nanocomposites and Improved Cognition (BIONIC), Georgia Institute of Technology, 771 Ferst Drive, Atlanta, Georgia 30332-0400 (United States); Kang, Tae-Sik; Deneault, James R.; Durstock, Michael F. [Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio, 45433-7702 (United States)

    2011-05-10

    An aqueous, protein-enabled (biomimetic), layer-by-layer titania deposition process is developed, for the first time, to convert aligned-nanochannel templates into high-aspect-ratio, aligned nanotube arrays with thin (34 nm) walls composed of co-continuous networks of pores and titania nanocrystals (15 nm ave. size). Alumina templates with aligned open nanochannels are exposed in an alternating fashion to aqueous protamine-bearing and titania precursor-bearing (Ti(IV) bis-ammonium-lactato-dihydroxide, TiBALDH) solutions. The ability of protamine to bind to alumina and titania, and to induce the formation of a Ti-O-bearing coating upon exposure to the TiBALDH precursor, enables the layer-by-layer deposition of a conformal protamine/Ti-O-bearing coating on the nanochannel surfaces within the porous alumina template. Subsequent protamine pyrolysis yields coatings composed of co-continuous networks of pores and titania nanoparticles. Selective dissolution of the underlying alumina template through the porous coating then yields freestanding, aligned, porous-wall titania nanotube arrays. The interconnected pores within the nanotube walls allow enhanced loading of functional molecules (such as a Ru-based N719 dye), whereas the interconnected titania nanoparticles enable the high-aspect-ratio, aligned nanotube arrays to be used as electrodes (as demonstrated for dye-sensitized solar cells with power conversion efficiencies of 5.2 {+-} 0.4%). (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. High-Yield Synthesis of Uniform Ag Nanowires with High Aspect Ratios by Introducing the Long-Chain PVP in an Improved Polyol Process

    Directory of Open Access Journals (Sweden)

    Jie-Jun Zhu

    2011-01-01

    Full Text Available Polyvinyl pyrrolidone (PVP with different molecular weights was used as capping agent to synthesize silver nanowires through a polyol process. The results indicated that the yields and aspect ratios of silver nanowires were controlled by the chain length of PVP and increased with increasing the molecular weight (MW of PVP. When the long-chain PVP-K90 (MW = 800,000 was used, the product was uniform in size and was dominated by nanowires with high aspect ratios. The growth mechanism of the nanowires was studied. It is proposed that the chemical adsorption of Ag+ on the PVP chains at the initial stage promotes the growth of Ag nanowires.

  7. Design, fabrication and characterization of high-stroke high-aspect ratio micro electro mechanical systems deformable mirrors for adaptive optics

    Science.gov (United States)

    Fernandez Rocha, Bautista

    Adaptive optic (AO) systems for next generation of extremely large telescopes (30--50 meter diameter primary mirrors) require high-stroke (10 microns), high-order (100x100) deformable mirrors at lower-cost than current technology. The required specifications are achievable with Micro Electro Mechanical Systems (MEMS) devices fabricated with high-aspect ratio processing techniques. This dissertation will review simulation results compared with displacement measurements of actuators utilizing a white-light interferometer. It will also review different actuator designs, materials and post-processing procedures fabricated in three different high-aspect ratio processes, Microfabrica's Electrochemical Fabrication (EFAB(TM)), HT-Micro's Precision Fabrication Technology (HTPF(TM)), and Innovative Micro Technologies (IMT) fabrication process. These manufacturing processes allow high-precision multilayer fabrication and their sacrificial layer thicknesses can be specified by the designer, rather than by constraints of the fabrication process. Various types of high-stroke gold actuators for AO consisting of folded springs with rectangular and circular membranes as well as X-beam actuators supported diagonally by beams were designed, simulated, fabricated, and tested individually and as part of a continuous facesheet DM system. The design, modeling and simulation of these actuators are compared to experimental measurements of their pull-in voltages, which characterizes their stiffness and maximum stroke. Vertical parallel plate ganged actuators fabricated with the EFAB(TM) process have a calculated pull-in voltage of 95V for a 600mum size device. In contrast, the pull-in voltages for the comb-drive actuators ranged from 55V for the large actuator, to 203V for the smallest actuator. Simulations and interferometer scans of actuator designs fabricated with HT-Micro's Precision Fabrication (HTPF(TM)) two wafer bonded process with different spring supports have shown the ability of

  8. High Aspect Ratio Silver Conductive Tracks in Inkjet Printing%喷墨打印制备高“高宽比”银导线工艺

    Institute of Scientific and Technical Information of China (English)

    张磊; 朱云龙; 程晓鼎; 王驰远

    2016-01-01

    传统丝网印刷技术因其接触式印刷工艺难以提高金属导线的精度和“高宽比”,为实现高“高宽比”的金属导线制造,以低黏度纳米银墨水为喷墨材料,采用自主研发的喷墨打印设备在多种基材表面打印银导线.通过喷墨打印实验方法研究了喷墨打印过程的“咖啡环”及“马鞍型”缺陷产生原理及影响因素,通过在Teslin、Kapton、多晶硅硅片及高光相纸4种基材上多层打印及改变基板温度制备银导线,研究了银导线“高宽比”及三维形貌的变化关系.实验结果表明:基板温度在60℃时,打印的银导线呈“拱型”;基板温度在80℃时,打印的银导线“高宽比”最佳且受基材影响减弱.打印层数为20层时,导线边缘出现波浪纹;打印层数为80层时,波浪纹消失,导线形貌均匀.烧结温度为200℃时,银导线导电能力得到极大提升,Teslin基材形成的银导线电阻率最低至2.13μΩ·cm.%It' s difficult to improve the accuracy and aspect ratio of conductive tracks for the traditional screen printing technology. In order to achieve high aspect ratio of conductive tracks, an ink jet printing method for fabrication of high aspect ratio silver tracks was described. The mechanisms and influence factors of coffee-ring and M-type effect were revealed by experiments. The experiments of multi-pass inkjet printing on Teslin, Kapton, Polycrystalline silicon, glossy photo paper and altering substrates temperature procedure were carried out. The results show that when the substrate temperature is 60℃, the arch-type silver tracks are formed. When the substrate temperature is 80 ℃, the optimized aspect ratio of silver tracks is formed and the influence by different substrates is weak. As inkjet printing runs 20 pass, wave form on the edge of silver tracks comes out. When inkjet printing runs 80 pass, wave form fades away and high aspect ratio silver tracks are fabricated instead. When

  9. Self-organization and FORC-based magnetic characterization of ultra-high aspect ratio epitaxial Co nanostrips produced by oblique deposition on an ordered step-bunched silicon surface

    Science.gov (United States)

    Ognev, A. V.; Ermakov, K. S.; Samardak, A. Yu; Kozlov, A. G.; Sukovatitsina, E. V.; Davydenko, A. V.; Chebotkevich, L. A.; Stancu, A.; Samardak, A. S.

    2017-03-01

    Further development of microelectronics requires novel or improved technological approaches for device nanofabrication and functional properties characterization. In this paper, we studied the crystal structure and magnetic properties of epitaxial Co nanostrips with the average width of 32.6, 45.3, and 62.6 nm grown on a step-bunched Si(111)5.55 × 5.55-Cu/Cu surface. Technological conditions, under which the ultra-high aspect ratio (˜104) structurally solid, straight nanostrips of hcp-Co with crystallographic axis [0001] oriented along their long side can be grown, were determined. The dependence of the coercive force on the width of the nanostrips was demonstrated. Magnetization reversal through the transverse domain-wall nucleation and propagation in a Co nanostrip was defined with an analytical approach based on the Stoner-Wohlfarth model. Using the first-order reversal curve method, we analyzed the effect of nanostrip uniformity degree on magnetic behavior and the influence of the magnetostatic interactions on the coercive force of individual nanostrips.

  10. 高厚径比HDI板电镀能力研究%Plating ability Of HDI with high aspect ratio item

    Institute of Scientific and Technical Information of China (English)

    班向东

    2013-01-01

    With the development of information technology, more layers, thickness, aperture smaller, thicker wiring denser PCB needs PCB manufacturers put forward higher requirements. High aspect ratio and BMV plating are two different processing direction of PCB plating, and the two requirements of both the product processing is the dififculty of electroplating. So to ifnd a balance between the two is very important. Through the experiment, we found the electroplating parameters, achieved the balance of the blind holes.%随着信息技术的不断发展,层数更多、板厚更厚、孔径更小、布线更密的PCB需求给PCB生产厂家提出的更高的要求。高纵横比与盲孔电镀是PCB电镀的两个不同的加工方向,而这两种要求并存的产品加工是电镀的难点,因此找到两者之间的平衡点至关重要。本文通过实验,找到两者兼顾的电镀参数,达到通盲孔兼顾的效果。

  11. Low-temperature plasma etching of high aspect-ratio densely packed 15 to sub-10 nm silicon features derived from PS-PDMS block copolymer patterns.

    Science.gov (United States)

    Liu, Zuwei; Gu, Xiaodan; Hwu, Justin; Sassolini, Simone; Olynick, Deirdre L

    2014-07-18

    The combination of block copolymer (BCP) lithography and plasma etching offers a gateway to densely packed sub-10 nm features for advanced nanotechnology. Despite the advances in BCP lithography, plasma pattern transfer remains a major challenge. We use controlled and low substrate temperatures during plasma etching of a chromium hard mask and then the underlying substrate as a route to high aspect ratio sub-10 nm silicon features derived from BCP lithography. Siloxane masks were fabricated using poly(styrene-b-siloxane) (PS-PDMS) BCP to create either line-type masks or, with the addition of low molecular weight PS-OH homopolymer, dot-type masks. Temperature control was essential for preventing mask migration and controlling the etched feature's shape. Vertical silicon wire features (15 nm with feature-to-feature spacing of 26 nm) were etched with aspect ratios up to 17 : 1; higher aspect ratios were limited by the collapse of nanoscale silicon structures. Sub-10 nm fin structures were etched with aspect ratios greater than 10 : 1. Transmission electron microscopy images of the wires reveal a crystalline silicon core with an amorphous surface layer, just slightly thicker than a native oxide.

  12. Fabrication of high-aspect-ratio double-slot photonic crystal waveguide in InP heterostructure by inductively coupled plasma etching using ultra-low pressure

    Directory of Open Access Journals (Sweden)

    Kaiyu Cui

    2013-02-01

    Full Text Available Double-slot photonic crystal waveguide (PCW in InP heterostructure is fabricated by inductively coupled plasma (ICP etching. Due to using an ultra-low pressure of 0.05 Pa, etch depths up to 3.5 μm for holes with diameter of 200 nm and 1.8 μm for slots of ∼40 nm are achieved, which indicate a record-high aspect-ratio, i.e. 45, for such narrow slots in InP heterostructure. Moreover, etching quality is evaluated based on both the transmission performance and the linewidth of micro-photoluminescence (μ-PL. In our measurement, a structure-dependent transmission-dip about 17 dB is obtained from a 17-μm-long W3 PCW, and a PL widening as small as 19 nm compared to the corresponding wafer is observed. These promising experimental results evidence the high etching quality realized in this work and confirm the feasibility of etching small-feature-size patterns by ICP technology for InP based devices in future mono-/hetero-integrated photonic circuits.

  13. Catalytic Synthesis of Substrate-Free, Aligned and Tailored High Aspect Ratio Multiwall Carbon Nanotubes in an Ultrasonic Atomization Head CVD Reactor

    Directory of Open Access Journals (Sweden)

    Fahad Ali Rabbani

    2016-01-01

    Full Text Available Chemical vapor deposition (CVD method has proven its benchmark, over other methods, for the production of different types of carbon nanotubes (CNT on commercial and lab scale. In this study, an injection vertical CVD reactor fitted with an ultrasonic atomization head was used in a pilot-plant scale (height 274 cm, radius 25 cm for semicontinuous production of multiwall carbon nanotubes (MWCNTs. p-Xylene was used as a hydrocarbon precursor in which ferrocene was dissolved and provided the cracking catalyst. Atomization of the feed solution resulted in full and even dispersion of the catalytic solution. This dispersion led to the production of high aspect ratio MWCNTs (ranging from 8,000 to 12,000 at 850°C. Different experimental parameters affecting the quality and quantity of the produced CNTs were investigated. These included temperature, reaction time, and flow rate of the reaction and carrier gases. Different properties of the produced CNTs were characterized using SEM and TEM, while TGA was used to evaluate their purity. Specific surface area of selected samples was calculated by BET.

  14. The performances of silicon solar cell with core-shell p-n junctions of micro-nano pillars fabricated by cesium chloride self-assembly and dry etching

    Science.gov (United States)

    Liu, Jing; Zhang, Xinshuai; Dong, Gangqiang; Liao, Yuanxun; Wang, Bo; Zhang, Tianchong; Yi, Futing

    2014-03-01

    Silicon micro-nano pillars are cost-efficiently integrated using twice cesium chloride (CsCl) islands lithography technique and dry etching for solar cell applications. The micro PMMA islands are fabricated by inductively coupled plasma (ICP) dry etching with micro CsCl islands as masks, and the nano CsCl islands with nano sizes then are made on the surface of micro PMMA islands and silicon. By ICP dry etching with the mask of micro PMMA islands and nano CsCl islands, the micro-nano silicon pillars are made and certain height micro pillars are randomly positioned between dense arrays of nano pillars with different morphologies by controlling etching conditions. With 300 nm depth p-n junction detected by secondary-ion mass spectrometry (SIMS), the micro pillars of the diameter about 1 μm form the core-shell p-n junction to maximize utility of p-n junction interface and enable efficient free carrier collection, and the nano tapered pillars of 150 nm diameter are used to decrease reflection by a graded-refractive-index. Compared to single micro or nano pillar arrayed cells, the co-integrated solar cell with micro and nano pillars demonstrates improved photovoltaic characteristic that is a photovoltaic conversion efficiency (PCE) of 15.35 % with a short circuit current density ( J sc) of 38.40 mA/cm2 and an open circuit voltage ( V oc) of 555.7 mV, which benefits from the advantages of micro-nano pillar structures and can be further improved upon process optimization.

  15. Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined with LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating

    NARCIS (Netherlands)

    Saadaoui, M.; van Zeijl, H.; Wien, W. H. A.; Pham, H. T. M.; Kwakernaak, C.; Knoops, H. C. M.; Kessels, W. M. M.; R. van de Sanden,; Voogt, F. C.; Roozeboom, F.; Sarro, P. M.

    2011-01-01

    One of the critical steps toward producing void-free and uniform bottom-up copper electroplating in high aspect-ratio (AR) through-silicon vias (TSVs) is the ability of the copper electrolyte to spontaneously flow through the entire depth of the via. This can be accomplished by reducing the concentr

  16. Current transport mechanism at metal-semiconductor nanoscale interfaces based on ultrahigh density arrays of p-type NiO nano-pillars.

    Science.gov (United States)

    Nandy, Suman; Gonçalves, Gonçalo; Pinto, Joana Vaz; Busani, Tito; Figueiredo, Vitor; Pereira, Luís; Paiva Martins, Rodrigo Ferrão; Fortunato, Elvira

    2013-12-07

    The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.

  17. Fabrication of high aspect ratio TiOsub>2sub> and Alsub>2sub>O>3sub> nanogratings by atomic layer deposition

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Takayama, Osamu; Michael-Lindhard, Jonas

    2016-01-01

    The authors report on the fabrication of TiO2 and Al2O3 nanostructured gratings with an aspect ratio of up to 50. The gratings were made by a combination of atomic layer deposition (ALD) and dry etch techniques. The workflow included fabrication of a Si template using deep reactive ion etching...

  18. 大展弦比飞翼布局飞机的三轴稳定特性%Three-axis stability characteristics of flying wing with high aspect ratio

    Institute of Scientific and Technical Information of China (English)

    张子军; 王磊; 王立新; 王晋军

    2012-01-01

    飞翼布局飞机取消了平尾和垂尾,构型的改变和阻力方向舵的使用使其呈现出与常规布局飞机不同的三轴稳定特性.以大展弦比飞翼布局飞机为研究对象,开展了其三轴静、动稳定特性的研究;通过与常规大展弦比飞机进行对比,揭示了飞翼构型参数、典型飞行状态对其稳定性的影响规律;分析了阻力方向舵的偏转对此类飞机稳定性的影响.研究结果表明,大展弦比飞翼布局飞机的本体稳定性存在诸多的不足.%A flying wing cancels horizontal and vertical tails, but the changes of configuration and the use of drag rudder make it differ much from the conventional configuration aircraft in three-axis stability characteristics. The aircraft chosen for the study is a flying wing with high aspect ratio. Its three-axis static and dynamic stability characteristics are studied. Comparing with the conventional configuration aircraft with high aspect ratio, the effects of configuration parameters and typical flight condition on the stabilities of the flying wing are discussed. The impact of the drag rudder on the stabilities of such aircraft types is also analyzed. Results show that there are many deficiencies in the inherent three-axis stabilities of the high aspect ratio flying wing.

  19. Injection Molding of High Aspect Ratio Nanostructures

    DEFF Research Database (Denmark)

    Matschuk, Maria; Larsen, Niels Bent

    We present a process for injection molding of 40 nm wide and >100 nm high pillars (pitch: 200 nm). We explored the effects of mold coatings and injection molding conditions on the replication quality of nanostructures in cyclic olefin copolymer. We found that optimization of molding parameters...

  20. Wind-tunnel investigation of longitudinal and lateral-directional stability and control characteristics of a 0.237-scale model of a remotely piloted research vehicle with a thick, high-aspect-ratio supercritical wing

    Science.gov (United States)

    Byrdsong, T. A.; Brooks, C. W., Jr.

    1980-01-01

    A 0.237-scale model of a remotely piloted research vehicle equipped with a thick, high-aspect-ratio supercritical wing was tested in the Langley 8-foot transonic tunnel to provide experimental data for a prediction of the static stability and control characteristics of the research vehicle as well as to provide an estimate of vehicle flight characteristics for a computer simulation program used in the planning and execution of specific flight-research mission. Data were obtained at a Reynolds number of 16.5 x 10 to the 6th power per meter for Mach numbers up to 0.92. The results indicate regions of longitudinal instability; however, an adequate margin of longitudinal stability exists at a selected cruise condition. Satisfactory effectiveness of pitch, roll, and yaw control was also demonstrated.

  1. Study on Static Test Technology for High-Aspect Ratio Wing of Full Scale Aircraft%全尺寸飞机大展弦比机翼静力试验技术研究

    Institute of Scientific and Technical Information of China (English)

    刘兴科; 刘冰; 张建锋

    2014-01-01

    In the bearing capability static test of wing structure,because of the high-aspect ratio, the large deformation will arouse load direction changed.Taking the full scale aircraft structure as research obj ect,a test loading technology is proposed,which can realize the extractive wing loading.The static test of a certain type aircraft structure solves the problems of large deforma-tion loading,which has great realistic significance and application value.%在大展弦比飞机的机翼承载能力试验中,试验加载方向会因其大变形发生变化。本文以全尺寸结构机翼为研究对象,提出一种试验加载技术,最大程度实现机翼载荷的准确施加。通过此静强度试验,很好地解决了机翼试验大变形加载问题,具有较大的现实意义和应用价值。

  2. Aeroelastic response for straight wing with high aspect ratio due to sharp edge gust%锐边突风对大展弦比机翼的气动弹性响应影响

    Institute of Scientific and Technical Information of China (English)

    刘伏虎; 马晓平

    2012-01-01

    基于Theodorsen非定常气动力理论,以大展弦比均匀直机翼为研究对象,建立了系统的气动弹性响应方程.选取二阶弯曲和二阶扭转模态,采用V-g法求解了系统的颤振速度.基于Kussner函数,建立了锐边突风系统模型,并推导了在弯曲和扭转模态阶数为Nw和Na下的系统状态方程,仿真研究了加入突风后系统的气动弹性响应.结果表明,加入突风后翼尖响应振幅增大.%Based on Theodorsen unsteady aerodynamics theory, the equation of aeroelastic response for straight wing with high aspect ratio is established. Flutter speed is determined for two bending modes and two torsional modes using V-g methods. The sharp edge gust system model is established and the system state equations are derived with Nw bending modes and Na torsional modes wing systems based on the function Kussner. The aeroelastic response of system shows that the amplitude oscillation becomes higher. The modeling method may offer reference for research of gust response.

  3. Low-speed aerodynamic performance of a high-aspect-ratio supercritical-wing transport model equipped with full-span slat and part-span double-slotted flaps

    Science.gov (United States)

    Morgan, H. L., Jr.; Paulson, J. W., Jr.

    1979-01-01

    An investigation was conducted in the Langley V/STOL tunnel to determine the static longitudinal and lateral-directional aerodynamic characteristics of an advanced high-aspect-ratio supercritical-wing transport model equipped with a full-span leading-edge slat and part-span double-slotted trailing-edge flaps. This wide-body transport model was also equipped with spoiler and aileron control surfaces, flow-through nacelles, landing gear, movable horizontal tails, and interchangeable wing tips with aspect ratios of 10 and 12. The model was tested with leading-edge slat and trailing-edge flap combinations representative of cruise, climb, takeoff, and landing wing configurations. The tests were conducted at free-stream conditions corresponding to Reynolds numbers (based on mean geometric chord) of 0.97 to 1.63 x 10 to the 6th power and corresponding Mach numbers of 0.12 to 0.20, through an angle-of-attack range of -2 deg to 24 deg and a sideslip-angle range of -10 deg to 5 deg.

  4. 高深宽比金属光栅制备及中红外波段传感特性%Fabrication and application of high aspect ratio metallic gratings for sensing in the mid-infrared region

    Institute of Scientific and Technical Information of China (English)

    郑改革; 陈云云; 徐林华; 赖敏

    2013-01-01

    A method for fabricating high aspect ratio (HAR) metallic gratings using nanoimprint together with sputtering and reactive-ion etching (RIE) was introduced. The reflection spectrum is measured by Fourier transform infrared (FT-IR) spectrometer in the mid-infrared (Mid-IR) region. The reflection peaks will appear just when the p-polarized light incident normally to the grating vector direction, which is very similar to the phenomenon of surface plasmon resonance. This is the so-called spoof surface plasmon resonance (SSPR). Theoretical analysis based on rigorous coupled wave showed that spoof surface plasmon resonance is very sensitive to the change of refractive index in the surface of the metal. Thus this phenomenon has its potential use as a refractive index sensor. In addition, the shift of resonance wavelength with the refractive index of the metal surface is completely linear. The refractive index sensitivity of the Mid-IR SPR sensor are predicted to be 1600 nm per refractive index unit (1600 nm/RIU) and 5000 nm/RIU for the positive and negative order diffractive waves, respectively. The corresponding figure of merits of the whole system is predicted to be 20 RIU -1 and 60 RIU-1, respectively. The list of applicable target materials will certainly expand greatly if mid-IR SPR-based sensors are developed.%利用纳米压印结合溅射和反应离子刻蚀工艺制备了具有高深宽比的金光栅,使用傅里叶变换红外光谱仪测得了反射谱线.测量结果显示,只在p偏振光垂直于光栅矢量方向入射条件下才存在共振反射峰,证明了“伪表面等离子体激元波”的存在.基于严格耦合波分析理论计算了金属光栅的反射率,研究了其作为中红外波段波长调制型表面等离子体共振传感器的可行性.数值计算表明负级次衍射光波对应的共振反射峰的移动能获得较高的波长灵敏度.对于深宽比为10的金光栅结构,+1级次和-3级次衍射光波对应

  5. Preparation and Cytotoxicity of High-aspect-ratio Gold Nanorods at Single Cell Level%大长径比金纳米棒的合成及其单细胞毒性研究

    Institute of Scientific and Technical Information of China (English)

    周海英; 周瑞; 熊斌; 何彦

    2012-01-01

    利用三步晶种生长法合成长径比约为14的大长径比金纳米棒(GNR),利用巯基十一酸(MUDA)对金纳米棒表面进行了生物适应性修饰,并在宏观水平上研究了修饰前后的金纳米棒在对细胞活性的影响.利用单细胞方法分别考察了修饰后的纳米金棒对细胞贴壁过程、增殖速率、细胞内ROS以及骨架排布的影响.虽然MTT细胞活性结果显示内吞后的金纳米棒对细胞无毒,但单细胞毒性分析方法发现,不同浓度纳米金棒对早期贴壁过程有较小的影响,且内吞的纳米金棒在一定程度上促进了细胞的增殖,而高浓度下纳米金棒引起了细胞内ROS含量的升高,并破坏了细胞内骨架纤维排布.本研究建立了用单细胞行为分析纳米颗粒对细胞毒性的方法,证明了以往仅仅利用MTT等宏观手段分析纳米材料生物适应性是不足的.纳米材料在生物医学领域的进一步应用还应考虑单细胞及分子水平上的毒性效应.%We have synthesized high-aspect-ratio gold nanorods (GNR) by using a three-step seed-mediated growth method. The aspect ratio of the GNRs is approximately 14. The modification of the GNRs was achieved by replacing the CTAB molecules on the surface of gold nanorods with the 11-mercaptoundecanoic (MUDA) molecules. The cytotoxicity of the as-prepared GNRs and their effects on endocytosis, adhesion, proliferation, intracellular reactive oxygen species (ROS) level and cytoskeleton of the cells were studied. Interestingly, by using the 3-(4, 5-dimethylthiazol-2-yl) 2,5-diphenyl-tetrazolium bromide (MTT) assay, the GNRs did not show a significant toxicity to HeLa cells. However, single cell viability assays showed that GNR uptake could influence the cell adhesion at the early stage, though the effect was not much, and the cell proliferation was promoted to some degree. Moreover, large amounts of GNR uptake will lead to increased intracellular ROS level and impaired the cell skeleton.

  6. MEMS acoustic emission transducers designed with high aspect ratio geometry

    Science.gov (United States)

    Saboonchi, H.; Ozevin, D.

    2013-09-01

    In this paper, micro-electro-mechanic systems (MEMS) acoustic emission (AE) transducers are manufactured using an electroplating technique. The transducers use a capacitance change as their transduction principle, and are tuned to the range 50-200 kHz. Through the electroplating technique, a thick metal layer (20 μm nickel + 0.5 μm gold) is used to form a freely moving microstructure layer. The presence of the gold layer reduces the potential corrosion of the nickel layer. A dielectric layer is deposited between the two electrodes, thus preventing the stiction phenomenon. The transducers have a measured quality factor in the range 15-30 at atmospheric pressure and are functional without vacuum packaging. The transducers are characterized using electrical and mechanical tests to identify the capacitance, resonance frequency and damping. Ultrasonic wave generation using a Q-switched laser shows the directivity of the transducer sensitivity. The comparison of the MEMS transducers with similar frequency piezoelectric transducers shows that the MEMS AE transducers have better response characteristics and sensitivity at the resonance frequency and well-defined waveform signatures (rise time and decay time) due to pure resonance behavior in the out-of-plane direction. The transducers are sensitive to a unique wave direction, which can be utilized to increase the accuracy of source localization by selecting the correct wave velocity at the structures.

  7. Rapid homogeneous endothelialization of high aspect ratio microvascular networks.

    Science.gov (United States)

    Naik, Nisarga; Hanjaya-Putra, Donny; Haller, Carolyn A; Allen, Mark G; Chaikof, Elliot L

    2015-08-01

    Microvascularization of an engineered tissue construct is necessary to ensure the nourishment and viability of the hosted cells. Microvascular constructs can be created by seeding the luminal surfaces of microfluidic channel arrays with endothelial cells. However, in a conventional flow-based system, the uniformity of endothelialization of such an engineered microvascular network is constrained by mass transfer of the cells through high length-to-diameter (L/D) aspect ratio microchannels. Moreover, given the inherent limitations of the initial seeding process to generate a uniform cell coating, the large surface-area-to-volume ratio of microfluidic systems demands long culture periods for the formation of confluent cellular microconduits. In this report, we describe the design of polydimethylsiloxane (PDMS) and poly(glycerol sebacate) (PGS) microvascular constructs with reentrant microchannels that facilitates rapid, spatially homogeneous endothelial cell seeding of a high L/D (2 cm/35 μm; > 550:1) aspect ratio microchannels. MEMS technology was employed for the fabrication of a monolithic, elastomeric, reentrant microvascular construct. Isotropic etching and PDMS micromolding yielded a near-cylindrical microvascular channel array. A 'stretch - seed - seal' operation was implemented for uniform incorporation of endothelial cells along the entire microvascular area of the construct yielding endothelialized microvascular networks in less than 24 h. The feasibility of this endothelialization strategy and the uniformity of cellularization were established using confocal microscope imaging.

  8. Downsizing of single crystalline high aspect ratio tungsten nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Milenkovic, Srdjan [IMDEA Materials Institute, Eric Kandel 2, 28906, Getafe (Spain); Drensler, Stefanie [Institute for Chemical Technology of Inorganic Materials, Johannes Kepler University, Altenberger Str. 69, 4040, Linz (Austria); Hassel, Achim Walter [Institute for Chemical Technology of Inorganic Materials, Johannes Kepler University, Altenberger Str. 69, 4040, Linz (Austria); Christian Doppler Laboratory for Combinatorial Oxide Chemistry, Institute for Chemical Technology of Inorganic Materials, Johannes Kepler University Linz, Altenberger Str. 69, 4040, Linz (Austria)

    2015-06-15

    Directional solidification of eutectic NiAl-W alloys offers an intuitive method to produce tungsten nanowires. Through the use of two different methods, the well-established Bridgman method and a newer type floating zone method, the direct influence of process parameters, like the withdrawal rate and the temperature gradient, onto the sample microstructure were studied. The sharp temperature gradient, built up using a four mirror system focusing the light emitted by halogen lamps inside the optical floating zone furnace allows producing nanowires with a diameter as small as 75 nm. Differences in the solid/liquid interface morphology depending on the solidification method used are discussed. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Active Aeroelastic Tailoring of High-Aspect-Ratio Composite Wings

    Science.gov (United States)

    2005-09-01

    34 - 26000 , ......... . . . ...... . . .... .. .......................... ... - - ----------- 21000 ... ........... ~0 50 LOAD... ISO 5: B s mission....f Figure 5: Basic mission profile 7 Figure 6: Baseline single-wing and joined-wing vehicles 3.1 Baseline vehicles Three sets

  10. Photoimageable Polyimide: A Dielectric Material For High Aspect Ratio Structures

    Science.gov (United States)

    Cech, Jay M.; Oprysko, Modest M.; Young, Peter L.; Li, Kin

    1986-07-01

    Polyimide has been identified as a useful material for microelectronic packaging because of its low dielectric constant and high temperature stability. Difficulties involved with reactive ion etching (RIE), a conventional technique for patterning thick polyimide films (thickness greater than 5 microns) with vertical walls, can be overcome by using photimageable polyimide precursors. The processing steps are similar to those used with negative photoresists. EM Chemical's HTR-3 photosensitive polyimide has been spun on up to a thickness of 12 microns. Exposure with a dose of 780 mJcm-2 of ultraviolet light, followed by spin development produces clean patterns as small as 5 microns corresponding to an aspect ratio of 2.4. When the patterned precursor is heated, an imidization reaction occurs converting the patterned film to polyimide. Baking to ca. 400 degrees C results in substantial loss in the thickness and in line width. However, shrinkage occurs reproducibly so useful rules for mask design can be formulated. Near vertical wall structures can be fabricated by taking advantage of the optical and shrinkage properties of the polyimide precursor. After development, an undercut wall profile can be produced since the bottom of the film receives less exposure and is hence more soluble in the developer. During heating, lateral shrinkage pulls the top of the film inward producing a vertical wall since the bottom is fixed to the substrate by adhesion. As a result, fully cured polyimide structures with straight walls and aspect ratios greater than one can be obtained. Dielectric properties of the fully imidized films were investigated with capacitor test structures. A relative dielectric constant of 3.3 and a loss tangent of .002 were measured at 20 kHz. It was also found that the dielectric constant increases as a linear function of relative humidity.

  11. High aspect ratio template and method for producing same

    Science.gov (United States)

    Sakamoto, Jeff S. (Inventor); Weiss, James R. (Inventor); Fleurial, Jean-Pierre (Inventor); Kisor, Adam (Inventor); Tuszynski, Mark (Inventor); Stokols, Shula (Inventor); Holt, Todd Edward (Inventor); Welker, David James (Inventor); Breckon, Christopher David (Inventor)

    2010-01-01

    Millimeter to nano-scale structures manufactured using a multi-component polymer fiber matrix are disclosed. The use of dissimilar polymers allows the selective dissolution of the polymers at various stages of the manufacturing process. In one application, biocompatible matrixes may be formed with long pore length and small pore size. The manufacturing process begins with a first polymer fiber arranged in a matrix formed by a second polymer fiber. End caps may be attached to provide structural support and the polymer fiber matrix selectively dissolved away leaving only the long polymer fibers. These may be exposed to another product, such as a biocompatible gel to form a biocompatible matrix. The polymer fibers may then be selectively dissolved leaving only a biocompatible gel scaffold with the pores formed by the dissolved polymer fibers.

  12. Noise Measurements of High Aspect Ratio Distributed Exhaust Systems

    Science.gov (United States)

    Bridges, James E.

    2015-01-01

    This paper covers far-field acoustic measurements of a family of rectangular nozzles with aspect ratio 8, in the high subsonic flow regime. Several variations of nozzle geometry, commonly found in embedded exhaust systems, are explored, including bevels, slants, single broad chevrons and notches, and internal septae. Far-field acoustic results, presented previously for the simple rectangular nozzle, showed that increasing aspect ratio increases the high frequency noise, especially directed in the plane containing the minor axis of the nozzle. Detailed changes to the nozzle geometry generally made little difference in the noise, and the differences were greatest at low speed. Having an extended lip on one broad side (bevel) did produce up to 3 decibels more noise in all directions, while extending the lip on the narrow side (slant) produced up to 2 decibels more noise, primarily on the side with the extension. Adding a single, non-intrusive chevron, made no significant change to the noise, while inverting the chevron (notch) produced up to 2decibels increase in the noise. Having internal walls (septae) within the nozzle, such as would be required for structural support or when multiple fan ducts are aggregated, reduced the noise of the rectangular jet, but could produce a highly directional shedding tone from the septae trailing edges. Finally, a nozzle with both septae and a beveled nozzle, representative of the exhaust system envisioned for a distributed electric propulsion aircraft with a common rectangular duct, produced almost as much noise as the beveled nozzle, with the septae not contributing much reduction in noise.

  13. Metallization of high aspect ratio, out of plane structures

    DEFF Research Database (Denmark)

    Vazquez, Patricia; Dimaki, Maria; Svendsen, Winnie Edith

    2009-01-01

    This work is dedicated to developing a novel three dimensional structure for electrochemical measurements in neuronal studies. The final prototype will allow not only for the study and culture on chip of neuronal cells, but also of brain tissue. The use of out-of-plane electrodes instead of planar......, since the coverage of the side walls of almost vertical pillars is not trivial by standard processes in a clean room facility. This paper will discuss the different steps taken towards this goal and present the results that we have obtained so far....

  14. Preliminary Study of Polymer Removal in 0.25, 0.3, and 0.5 μm Ruthenium Storage Nodes and 0.11 μm, 10.9:1 High-Aspect-Ratio Trenches by Laser-Induced Etching

    Science.gov (United States)

    Kim, Yong-Gi; Cha, Byung Heon

    2005-07-01

    The demands for new etching technology are increasing because of new materials, such as, ruthenium (Ru), platinum (Pt), and iridium (Ir), that are now being used, and the strict critical dimension (C/D) controls required in today’s ultra large scale integrated (ULSI) circuit technology and dynamic random-access memory (DRAM) fabrication lines. Laser etching technology successfully etched organometallic polymers generated after reactive ion etching and ash processing in 0.25, 0.3, and 0.5 μm Ru storage nodes. In this study, the effects of the incident beam profile on the laser-induced etching of the polymers are investigated. Unevenness of the peak energy in the Gaussian beam profile creates unequal etching and heating effects on the polymer removal depending on the irradiating position of the line beam profile on the sample surface. This article discusses for the first time the preliminary results of laser-induced etching with a KrF laser to remove photoresist (PR) and polymer in 0.11 μm deep contact holes with a high-aspect-ratio 10.9:1 trench hole. How deep can the laser etching technology penetrate and strip the PR at a high aspect ratio (A/R) of 10.9:1 and a 0.11 μm hole size? The penetration depth for the PR removal was approximately 1 μm, which is about a 9.1:1 A/R in a 0.11 μm hole with a 1.2-μm-deep trench. Several promising points are discussed on the basis of laser etching in such a high A/R and small 0.11 μm contact hole. Laser-induced etching technology enabled a very uniform penetration depth without any fluctuations, and it also did not show any attack on the edge of the barrier material TiN.

  15. Selective growth of fully relaxed GeSn nano-islands by nanoheteroepitaxy on patterned Si(001)

    Science.gov (United States)

    Schlykow, V.; Klesse, W. M.; Niu, G.; Taoka, N.; Yamamoto, Y.; Skibitzki, O.; Barget, M. R.; Zaumseil, P.; von Känel, H.; Schubert, M. A.; Capellini, G.; Schroeder, T.

    2016-11-01

    In this letter, we explore in detail the potential of nanoheteroepitaxy to controllably fabricate high quality GeSn nano-structures and to further improve the crystallinity of GeSn alloys directly grown on Si(001). The GeSn was grown by molecular beam epitaxy at relatively high temperatures up to 750 °C on pre-patterned Si nano-pillars embedded in a SiO2 matrix. The best compromise between selective GeSn growth and homogenous Sn incorporation of 1.4% was achieved at a growth temperature of 600 °C. X-ray diffraction measurements confirmed that our growth approach results in both fully relaxed GeSn nano-islands and negligible Si interdiffusion into the core of the nanostructures. Detailed transmission electron microscopy characterizations show that only the small GeSn/Si interface area reveals defects, such as stacking faults. Importantly, the main part of the GeSn islands is defect-free and of high crystalline quality. The latter was further demonstrated by photoluminescence measurements where a clear redshift of the direct ΓC-ΓV transition was observed with increasing Sn content.

  16. An Automated High Aspect Ratio Mesher for Computational Fluid Dynamics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The work will focus on the 3D implementation of the Phase 1 CHARM mesher, with solution-adaptive iteration for CFD and non-CFD applications. The proposed 3D method...

  17. The flow over a 'high' aspect ratio gothic wing at supersonic speeds

    Science.gov (United States)

    Narayan, K. Y.

    1975-01-01

    Results are presented of an experimental investigation on a nonconical wing which supports an attached shock wave over a region of the leading edge near the vertex and a detached shock elsewhere. The shock detachment point is determined from planform schlieren photographs of the flow field and discrepancies are shown to exist between this and the one calculated by applying the oblique shock equations normal to the leading edge. On a physical basis, it is argued that the shock detachment has to obey the two-dimensional law normal to the leading edges. From this, and from other measurements on conical wings, it is thought that the planform schlieren technique may not be particularly satisfactory for detecting shock detachment. Surface pressure distributions are presented and are explained in terms of the flow over related delta wings which are identified as a vertex delta wing and a local delta wing.

  18. Visualization of cavitating and flashing flows within a high aspect ratio injector

    Science.gov (United States)

    Thompson, Andrew S.

    Thermal management issues necessitate the use of fuel as a heat sink for gas turbine and liquid rocket engines. There are certain benefits to using heated fuels, namely, increased sensible enthalpy, increased combustion efficiency, a decrease in certain emissions, and enhanced vaporization characteristics. However, the thermal and pressure enviornment inside an injector can result in the fuel flashing to vapor. Depending on the injector design, this can have deleterious effects on engine performance. As interest in heated fuels inreases, it is important to understand what occurs in the flow path of an injector under flashing conditions. At the High Pressure Laboratory at Purdue University's Maurice J. Zucrow Laboritories, a test rig was designed and built to give visual access into the flow path of a 2-D slot injector. The rig is capable of pressurizing and heating a liquid to superheated conditions and utilizes a pneumatically actuated piston to pusth the liquid through the slot injector. Methanol was chosen as a surrogate fuel to allow for high levels of superheat at relatively low temperatures. Testing was completed with acrylic and quartz injectors of varying L/DH. Flashing conditions inside the injector flow path were induced via a combination of heating and back pressure adjustments. Volume flow rate, pressure measurements, and temperature measurements were made which allowed the discharge characteristics, the level of superheat, and other parameters to be calculated and compared. To give a basis for comparison the flashing results are compared to the flow through the injector under cavitating conditions. Cavitation and flashing appear to be related phenomena and this relationship is shown. Bubble formation under cavitating or flashing conditions is observed to attenuate the injector's discharge characteristics. High speed videos of the flow field were also collected. Several flow regimes and flow structures, unique to these regimes, were observed. A frequency analysis was also performed on the video files. Bubble formation in the flow field dominates the frequency spectrum, which is confined below 1 kHz. The test campaign was successful. The result is a possible way to predict an injector's performance under flashing conditions without running heated fuel through the injector. These results may be applicable to real world injector design and testing.

  19. High-aspect-ratio silicon-cell metallization technical status report. Final report

    Energy Technology Data Exchange (ETDEWEB)

    1982-01-01

    Two features of the silicon concentrator solar cell are addressed which affect output at high concentration levels. The first is the development of narrow but high electroplated grid lines with improved conductivity. The object is a reduction in cell series resistance without increase in shadowing. This goal is accomplished by electroplating through a thick photo resist mask to produce lines .7 mil wide by .7 mil high. Advance pulse plating techniques are combined with pure silver plating baths to produce a deposit conductivity equal to the bulk silver conductivity (a 1.5 to 2 X improvement over conventional silver plating). The second feature is a double diffused selectively textured front surface. This development employs a deep diffusion in the silicon under the grid lines. Only the non grid line open area is selectively texture etched removing the deep junction. This open textured area is then given a second shallow diffusion for optimum cell efficiency. This selective procedure maintains the original highly polished wafer surface under the grid lines so that high resolution narrow grid lines are possible. The double diffusion protects the junction from metal diffusion while enabling the optimum shallow junction in the illuminated regions. Combining these two features has produced a large area concentrator cells (8 cm/sup 2/) with peak efficiency above 16% and exhibiting a broad peak efficiency extending from 50 to 175 suns above 15%.

  20. Light extinction and scattering from individual and arrayed high-aspect-ratio trenches in metal

    DEFF Research Database (Denmark)

    Roberts, Alexander; Søndergaard, Thomas; Chirumamilla, Manohar

    2016-01-01

    for a two-dimensional scatterer. We construct a simple resonator model which predicts the wavelength-dependent extinction, scattering, and absorption cross section of the trench and compare the model findings with full numerical simulations. Both extinction and scattering cross sections are mainly...... determined by the wavelength and can reach highly supergeometric values. At wavelengths where the metal exhibits near perfect electrical conductor behavior, such trenches lend themselves to be used as self-normalizing scatterers, as their scattering cross section is independent of their geometry and depend...... and two-photon luminescence that the resonant behavior of the vertical trenches is preserved....

  1. Surface tension-induced high aspect-ratio PDMS micropillars with concave and convex lens tips

    KAUST Repository

    Li, Huawei

    2013-04-01

    This paper reports a novel method for the fabrication of 3-dimensional (3D) Polydimethylsiloxane (PDMS) micropillars with concave and convex lens tips in a one-step molding process, using a CO2 laser-machined Poly(methyl methacrylate) (PMMA) mold with through holes. The PDMS micropillars are 4 mm high and have an aspect ratio of 251. The micropillars are formed by capillary force drawing up PDMS into the through hole mold. The concave and convex lens tips of the PDMS cylindrical micropillars are induced by surface tension and are controllable by changing the surface wetting properties of the through holes in the PMMA mold. This technique eliminates the requirements of expensive and complicated facilities to prepare a 3D mold, and it provides a simple and rapid method to fabricate 3D PDMS micropillars with controllable dimensions and tip shapes. © 2013 IEEE.

  2. Nucleation of melting and solidification in confined high aspect ratio thin films

    Science.gov (United States)

    Mastandrea, J. P.; Ager, J. W.; Chrzan, D. C.

    2017-09-01

    Classical nucleation theory is used to consider the solidification of a melt confined between two planar surfaces. The critical nucleus shapes and the associated nucleation energy barriers are computed as a function of the thickness of the film and the film's relevant bulk and interface energies. The analysis is then repeated for the melting transition, and expressions for the depression and elevation of the melting temperature, relative to the thermodynamic bulk melting temperature of the film material, are found. A nucleus morphology diagram is constructed. This diagram presents the lowest energy morphology of the nuclei, as well as melting points, as a function of the system parameters. Using the nucleus morphology diagram, experimental and system parameters that allow for the desired nucleation behavior can be identified. Furthermore, the nucleus morphology diagram illustrates a region of parameter space where the film is predicted to solidify above its thermodynamic bulk melting temperature, a behavior termed presolidification. The theory is used to predict the temperature at which the nucleation of the solid phase and liquid phase is expected for Ge between two glass substrates. Furthermore, a possible route for controlling the orientation of the film is identified. By controlling the growth temperature, certain orientations may not be able to nucleate, thereby reducing the possible number of orientations within a film.

  3. Lecithin blended polyamide-6 high aspect ratio nanofiber scaffolds via electrospinning for human osteoblast cell culture

    Energy Technology Data Exchange (ETDEWEB)

    Nirmala, R. [Bio-nano System Engineering, College of Engineering, Chonbuk National University, Jeonju, 561 756 (Korea, Republic of); Park, Hye-Min [Department of Pharmacology and Toxicology, College of Veterinary Medicine, Chonbuk National University, Jeonju 561 756 (Korea, Republic of); Navamathavan, R. [School of Advanced Materials Engineering, Chonbuk National University, Jeonju 561 756 (Korea, Republic of); Kang, Hyung-Sub [Department of Pharmacology and Toxicology, College of Veterinary Medicine, Chonbuk National University, Jeonju 561 756 (Korea, Republic of); El-Newehy, Mohamed H. [Petrochemical Research Chair, Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia); Kim, Hak Yong, E-mail: khy@jbnu.ac.kr [Petrochemical Research Chair, Department of Chemistry, College of Science, King Saud University, Riyadh 11451 (Saudi Arabia); Center for Healthcare Technology and Development, Chonbuk National University, Jeonju, 561 756 (Korea, Republic of)

    2011-03-12

    In this study, we focused on the preparation and characterization of lecithin blended polyamide-6 nanofibers via an electrospinning process for human osteoblastic (HOB) cell culture applications. The morphological, structural characterizations and thermal properties of polyamide-6/lecithin nanofibers were determined by using scanning electron microscopy (SEM), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, differential scanning calorimetry (DSC) and thermogravimetry (TGA). SEM images revealed that the nanofibers were well-oriented with good incorporation of lecithin. FT-IR results indicated the presence of amino groups of lecithin in the blended nanofibers. TGA analysis revealed that the onset degradation temperature decreased with increasing lecithin content in the blended nanofibers. The morphological features of cells attached on polyamide-6/lecithin nanofibers were confirmed by SEM. The adhesion, viability and proliferation properties of osteoblast cells on the polyamide-6/lecithin blended nanofibers were analyzed by in vitro cell compatibility test. This study demonstrated the non-cytotoxic behavior of electrospun polyamide-6/lecithin nanofibers for the osteoblast cell culture.

  4. Dispersion and Polarization of Surface Waves Trapped in High Aspect Ratio Electrode Arrays

    DEFF Research Database (Denmark)

    Laude, Vincent; Dühring, Maria Bayard; Moubchir, Hanane

    2007-01-01

    .Phys., 90(5):2492, 2001; Appl. Phys. Lett., 89:083515, 2006.) an experimental and theoretical analysis of the transduction of SAW under a metallic array of electrodes with a large aspect ratio on a piezoelectric substrate, whereby allowing the electrode height to become larger than one wavelength....... The multimode character of SAW propagation was observed and the explicit dependence of the SAW velocities as a function of the electrode height was obtained experimentally. Up to a 10-fold slowing of surface waves was observed, with the phase velocity dropping from 4000 m/s down to 450 m/s. We present...

  5. Photoablation characteristics of novel polyimides synthesized for high-aspect-ratio excimer laser LIGA process

    Science.gov (United States)

    Yang, Chii-Rong; Hsieh, Yu-Sheng; Hwang, Guang-Yeu; Lee, Yu-Der

    2004-04-01

    The photoablation properties of two soluble polyimides DMDB/6FDA and OT/6FDA with thicknesses of over 300 µm, synthesized by the polycondensation of a hexafluoropropyl group contained in a dianhydride with two kinds of diamines, are investigated using a 248 nm krypton fluoride (KrF) laser. The incorporation of the hexafluoropropyl group into the chemical structure gives these two polyimides higher etching rates than Kapton (a commercial polyimide film which is difficult to dissolve). The etching rates of synthesized polyimides are about 0.1-0.5 µm/pulse over a fluence range of 0.25-2.25 J cm-2. The photothermal mechanism for DMDB/6FDA contributes about 19% of etching depth at a laser fluence of 0.82 J cm-2. Moreover, the number of laser pulses seriously affects the taper angle of microstructures, especially at low fluence. Near-vertical side-wall structures can be built at high fluence (~2 J cm-2). Fresnel patterns with a thickness of 300 µm and a linewidth of 10 µm were fabricated, with an attainable aspect ratio of around 30. After photoablation, the complementary metallic microstructures were also fabricated by a sequential electroplating procedure. Then, those two new polyimides could be dissolved easily in most common solvents (such as THF, DMSO, NMP and DMF). These results indicate that these two soluble polyimides are highly suitable for use in the KrF laser LIGA process.

  6. Hot embossing of photonic crystal polymer structures with a high aspect ratio

    DEFF Research Database (Denmark)

    Schelb, Mauno; Vannahme, Christoph; Kolew, Alexander;

    2011-01-01

    Hot embossing is a promising approach for mass production of photonic crystal structures. This paper describes the fabrication of a replication tool for two-dimensional photonic crystal patterns and its replication in substrates of poly(methylmethacrylate) (PMMA) and cyclic olefin copolymer (COC......). A nickel tool for the replication of structures with lateral dimensions of 110 nm and heights of approximately 370 nm is fabricated via electroplating of a nanostructured sample resulting in an aspect ratio of approximately 3.5. The structures are subsequently hot embossed into PMMA and COC substrates....

  7. Millijoule femtosecond micro-Bessel beams for ultra-high aspect ratio machining.

    Science.gov (United States)

    Mitra, Sambit; Chanal, Margaux; Clady, Raphaël; Mouskeftaras, Alexandros; Grojo, David

    2015-08-20

    We report on a functional experimental design for Bessel beam generation capable of handling high-energy ultrashort pulses (up to 1.2 mJ per pulse of 50 fs duration). This allows us to deliver intensities exceeding the breakdown threshold for air or any dielectric along controlled micro-filaments with lengths exceeding 4 mm. It represents an unprecedented upscaling in comparison to recent femtosecond Bessel beam micromachining experiments. We produce void microchannels through glass substrates to demonstrate that aspect ratios exceeding 1200∶1 can be achieved by using single high-intensity pulses. This demonstration must lead to new methodologies for deep-drilling and high-speed cutting applications.

  8. Highly sensitive glucose biosensor based on Au-Ni coaxial nanorod array having high aspect ratio.

    Science.gov (United States)

    Hsu, Che-Wei; Wang, Gou-Jen

    2014-06-15

    An effective glucose biosensor requires a sufficient amount of GOx immobilizing on the electrode surface. An electrode of a 3D nanorod array, having a larger surface-to-volume ratio than a 2D nanostructure, can accommodate more GOx molecules to immobilize onto the surface of the nanorods. In this study, a highly sensitive Au-Ni coaxial nanorod array electrode fabricated through the integration of nano electroforming and immersion gold (IG) method for glucose detection was developed. The average diameter of the as-synthesized Ni nanorods and that of the Au-Ni nanorods were estimated to be 150 and 250 nm, respectively; both had a height of 30 μm. The aspect ratio was 120. Compared to that of a flat Au electrode, the effective sensing area was enhanced by 79.8 folds. Actual glucose detections demonstrated that the proposed Au-Ni coaxial nanorod array electrode could operate in a linear range of 27.5 μM-27.5mM with a detection limit of 5.5μM and a very high sensitivity of 769.6 μA mM(-1)cm(-2). Good selectivity of the proposed sensing device was verified by sequential injections of uric acid (UA) and ascorbic acid (AA). Long-term stability was examined through successive detections over a period of 30 days.

  9. High aspect-ratio MEMS devices for the next generation of THz/MHz passive components

    NARCIS (Netherlands)

    Fiorentino, G.

    2015-01-01

    The realization of efficient passive devices directly on chip represents one of the most intriguing challenges in IC fabrication processes. The performance of such devices are intrinsically determined by physical parameters that cannot be easily scaled, making the on-chip integration of such compone

  10. Patterning of periodic high-aspect-ratio nanopores in anatase titanium dioxide from titanium fluoride hydrolysis.

    Science.gov (United States)

    Tevis, Ian D; Stupp, Samuel I

    2011-05-01

    We report straight pores in titanium dioxide produced by a pattern transfer method with titanium fluoride hydrolysis. The resulting films on fluorine-doped tin oxide had pores with diameters of 30 nm and depths of 500 nm, corresponding to aspect ratios of 1:17.

  11. High-aspect-ratio photoresist processing for fabrication of high resolution and thick micro-windings

    Science.gov (United States)

    Anthony, Ricky; Laforge, Elias; Casey, Declan P.; Rohan, James F.; O'Mathuna, Cian

    2016-10-01

    DC winding losses remain a major roadblock in realizing high efficiency micro-magnetic components (inductors/transformers). This paper reports an optimized photoresist process using negative tone and acrylic based THB-151N (from JSR Micro), to achieve one of the highest aspect ratio (17:1) and resolution (~5 µm) resist patterns for fabrication of thick (~80 µm) micro-winding using UV lithography. The process was optimized to achieve photoresist widths from 5 µm to 20 µm with resist thickness of ~85 µm in a single spin step. Unlike SU-8, this resist can be readily removed and shows a near-vertical (~91°) electroplated Cu side-wall profile. Moreover, the high resolution compared to available resist processes enables a further reduction in the footprint area and can potentially increase the number of winding thereby increasing the inductance density for micro-magnetic components. Resistance measurements of electroplated copper winding of air-core micro-inductors within the standard 0402 size (0.45 mm2 footprint area) suggested a 42% decrease in resistance (273 mΩ-159 mΩ) with the increase in electroplated Cu thickness (from 50 µm to 80 µm). Reduction of the spacings (from 10 µm to 5 µm) enabled further miniaturisation of the device footprint area (from 0.60 mm2 to 0.45 mm2) without significant increase in resistance.

  12. Ordered and Ultra-High Aspect Ratio Nanocapillary Arrays as a Model System

    Science.gov (United States)

    2015-10-13

    nanocapillaries can be used to synthesize molecularly confined or form quantum confined nanostructures. We have shown these effects benefit to improve...10 3 10-2 10 1 100 101 102 103 104 Page 5 Copyright © 2015 Mainstream Engineering Corporation Thermodynamic • Joule Heating • Uneven...Complex thermal/electrochemical dependence  Rate-inhibiting concentration gradient established  Small environmental gradients effect long-term

  13. Low-energy electron transmission through high aspect ratio Al O nanocapillaries

    DEFF Research Database (Denmark)

    Milosavljević, A.R.; Jureta, J.; Víkor, G.;

    2009-01-01

    Electron transmission through insulating AlO nanocapillaries of different diameters (40 and 270 nm) and 15 μm length has been investigated for low-energy electrons (2-120 V). The total intensity of transmitted current weakly depends on the incident electron energy and tilt angle defined with resp......Electron transmission through insulating AlO nanocapillaries of different diameters (40 and 270 nm) and 15 μm length has been investigated for low-energy electrons (2-120 V). The total intensity of transmitted current weakly depends on the incident electron energy and tilt angle defined...

  14. Fabrication of High Aspect Ratio Micro-Penning-Malmberg Gold Plated Silicon Trap Arrays

    CERN Document Server

    Narimannezhad, Alireza; Weber, Marc H; Lynn, Kelvin G

    2013-01-01

    Acquiring a portable high density charged particles trap might consist of an array of micro-Penning-Malmberg traps (microtraps) with substantially lower end barriers potential than conventional Penning-Malmberg traps [1]. We report on the progress of the fabrication of these microtraps designed for antimatter storage such as positrons. The fabrication of large length to radius aspect ratio (1000:1) microtrap arrays involved advanced techniques including photolithography, deep reactive ion etching (DRIE) of silicon wafers to achieve through-vias, gold sputtering of the wafers on the surfaces and inside the vias, and thermal compression bonding of the wafers. This paper describes the encountered issues during fabrication and addresses geometry errors and asymmetries. In order to minimize the patch effects on the lifetime of the trapped positrons, the bonded stacks were gold electroplated to achieve a uniform gold surface. We show by simulation and analytical calculation that how positrons confinement time depen...

  15. Injection molding micro patterns with high aspect ratio using a polymeric flexible stamper

    Directory of Open Access Journals (Sweden)

    2011-11-01

    Full Text Available Poor filling occurs during the injection molding process of micro- or nano- scale patterns mainly because the hot polymer melt rapidly cools and its skin quickly solidifies upon contact with the mold surface. In this study, it is proposed to use Polyethylene terephthalate (PET film coated with patterned polyurethane acrylate (PUA as an effective thermal barrier. It can significantly hinder heat transfer into the mold during the molding process and thus may keep the melt viscosity low for longer duration. As a result, the replication would be improved not only during the filling phase but also during the packing phase. In order to verify the validity of the use of polymeric stamper, the melt-film interface temperature was evaluated by numerical simulation. Experimental results indicated that patterns possessing widths within the range of one to tens of micrometers and a height of approximately 10 µm were successfully filled and demolded.

  16. Deep proton writing of high aspect ratio SU-8 micro-pillars on glass

    Science.gov (United States)

    Ebraert, Evert; Rwamucyo, Ben; Thienpont, Hugo; Van Erps, Jürgen

    2016-12-01

    Deep proton writing (DPW) is a fabrication technology developed for the rapid prototyping of polymer micro-structures. We use SU-8, a negative resist, spincoated in a layer up to 720 μm-thick in a single step on borosilicate glass, for irradiation with a collimated 12 MeV energy proton beam. Micro-pillars with a slightly conical profile are irradiated in the SU-8 layer. We determine the optimal proton fluence to be 1.02 × 104 μm-2, with which we are able to repeatably achieve micro-pillars with a top-diameter of 138 ± 1 μm and a bottom-diameter of 151 ± 3 μm. The smallest fabricated pillars have a top-diameter of 57 ± 5 μm. We achieved a root-mean-square sidewall surface roughness between 19 nm and 35 nm for the fabricated micro-pillars, measured over an area of 5 × 63.7 μm. We briefly discuss initial testing of two potential applications of the fabricated micro-pillars. Using ∼100 μm-diameter pillars as waveguides for gigascale integration optical interconnect applications, has shown a 4.7 dB improvement in optical multimode fiber-to-fiber coupling as compared to the case where an air-gap is present between the fibers at the telecom wavelength of 1550 nm. The ∼140 μm-diameter pillars were used for mold fabrication with silicone casting. The resulting mold can be used for hydrogel casting, to obtain hydrogel replicas mimicking human tissue for in vitro bio-chemical applications.

  17. An atmospheric-pressure, high-aspect-ratio, cold micro-plasma.

    Science.gov (United States)

    Lu, X; Wu, S; Gou, J; Pan, Y

    2014-01-01

    An atmospheric pressure nonequilibrium Ar micro-plasma generated inside a micro-tube with plasma radius of 3 μm and length of 2.7 cm is reported. The electron density of the plasma plume estimated from the broadening of the Ar emission line reaches as high as 3 × 10(16) cm(-3). The electron temperature obtained from CR model is 1.5 ev while the gas temperature of the plasma estimated from the N2 rotational spectrum is close to room temperature. The sheath thickness of the plasma could be close to the radius of the plasma. The ignition voltages of the plasma increase one order when the radius of the dielectric tube is decreased from 1 mm to 3 μm.

  18. High Aspect Ratio Microstructures in Flexible Printed Circuit Boards : Process and Applications

    OpenAIRE

    Yousef, Hanna

    2008-01-01

    Flexible printed circuit boards (flex PCBs) are used in a wide range of electronic devices today due to their light weight, bendability, extensive wiring possibilities, and low-cost manufacturing techniques. The general trend in the flex PCB industry is further miniaturization alongside increasing functionality per device and reduced costs. To meet these demands, a new generation of low cost manufacturing technologies is being developed to enable structures with smaller lateral dimensions and...

  19. High-Aspect-Ratio CMOS add-on modules for RF passive components

    NARCIS (Netherlands)

    Sagkol, H.

    2011-01-01

    Commercial wireless communication technologies stemmed mostly from the research done through and after the Second World War as outlined in Chapter 1. Earlier systems were intended for military applications, hence had very high performance and were very expensive and bulky. Later, with the dawn of co

  20. Deep proton writing of high aspect ratio SU-8 micro-pillars on glass

    Energy Technology Data Exchange (ETDEWEB)

    Ebraert, Evert, E-mail: eebraert@b-phot.org; Rwamucyo, Ben; Thienpont, Hugo; Van Erps, Jürgen

    2016-12-15

    Deep proton writing (DPW) is a fabrication technology developed for the rapid prototyping of polymer micro-structures. We use SU-8, a negative resist, spincoated in a layer up to 720 μm-thick in a single step on borosilicate glass, for irradiation with a collimated 12 MeV energy proton beam. Micro-pillars with a slightly conical profile are irradiated in the SU-8 layer. We determine the optimal proton fluence to be 1.02 × 10{sup 4} μm{sup −2}, with which we are able to repeatably achieve micro-pillars with a top-diameter of 138 ± 1 μm and a bottom-diameter of 151 ± 3 μm. The smallest fabricated pillars have a top-diameter of 57 ± 5 μm. We achieved a root-mean-square sidewall surface roughness between 19 nm and 35 nm for the fabricated micro-pillars, measured over an area of 5 × 63.7 μm. We briefly discuss initial testing of two potential applications of the fabricated micro-pillars. Using ∼100 μm-diameter pillars as waveguides for gigascale integration optical interconnect applications, has shown a 4.7 dB improvement in optical multimode fiber-to-fiber coupling as compared to the case where an air–gap is present between the fibers at the telecom wavelength of 1550 nm. The ∼140 μm-diameter pillars were used for mold fabrication with silicone casting. The resulting mold can be used for hydrogel casting, to obtain hydrogel replicas mimicking human tissue for in vitro bio-chemical applications.

  1. Jet-Surface Interaction Noise from High-Aspect Ratio Nozzles: Test Summary

    Science.gov (United States)

    Brown, Clifford; Podboy, Gary

    2017-01-01

    Noise and flow data have been acquired for a 16:1 aspect ratio rectangular nozzle exhausting near a simple surface at the NASA Glenn Research Center as part of an ongoing effort to understand, model, and predict the noise produced by current and future concept aircraft employing a tightly integrated engine airframe designs. The particular concept under consideration in this experiment is a blended-wing-body airframe powered by a series of electric fans exhausting through slot nozzle over an aft deck. The exhaust Mach number and surface length were parametrically varied during the test. Far-field noise data were acquired for all nozzle surface geometries and exhaust flow conditions. Phased-array noise source localization data and in-flow pressure data were also acquired for a subset of the isolated (no surface) and surface configurations; these measurements provide data that have proven useful for modeling the jet-surface interaction noise source and the surface effect on the jet-mixing noise in round jets. A summary of the nozzle surface geometry, flow conditions tested, and data collected are presented.

  2. Key Techniques on Preparing High Aspect Ratio Micro and Nano Structures

    DEFF Research Database (Denmark)

    Jian, Zhao; Lianhe, Dong; Xiaoli, Zhu

    2016-01-01

    effectively. The mechanism of action between NaCl and HSQ was analyzed. The collapse and adhesion of resist structure due to the effect of gas-liquid interfacial capillary surface tension were suppressed by the CO2 supercritical drying method. Large-area dense nano-structures with the aspect ratio of 12...

  3. Numerical studies of the reversed-field pinch at high aspect ratio

    Science.gov (United States)

    Sätherblom, H.-E.; Drake, J. R.

    1998-10-01

    The reversed field pinch (RFP) configuration at an aspect ratio of 8.8 is studied numerically by means of the three-dimensional magnetohydrodynamic code DEBS [D. D. Schnack et al., J. Comput. Phys. 70, 330 (1987)]. This aspect ratio is equal to that of the Extrap T1 experiment [S. Mazur et al., Nucl. Fusion 34, 427 (1994)]. A numerical study of a RFP with this level of aspect ratio requires extensive computer achievements and has hitherto not been performed. The results are compared with previous studies [Y. L. Ho et al., Phys. Plasmas 2, 3407 (1995)] of lower aspect ratio RFP configurations. In particular, an evaluation of the extrapolation to the aspect ratio of 8.8 made in this previous study shows that the extrapolation of the spectral spread, as well as most of the other findings, are confirmed. An important exception, however, is the magnetic diffusion coefficient, which is found to decrease with aspect ratio. Furthermore, an aspect ratio dependence of the magnetic energy and of the helicity of the RFP is found.

  4. HIGH ASPECT RATIO ION EXCHANGE RESIN BED - HYDRAULIC RESULTS FOR SPERICAL RESIN BEADS

    Energy Technology Data Exchange (ETDEWEB)

    Duignan, M; Charles Nash, C; Timothy Punch, T

    2007-09-27

    A principal role of the DOE Savannah River Site is to safely dispose of a large volume of liquid nuclear waste held in many storage tanks. An in-tank ion exchange unit is being considered for cesium removal to accelerate waste processing. This unit is planned to have a relatively high bed height to diameter ratio (10:1). Complicating the design is the need to cool the ion exchange media; therefore, the ion exchange column will have a central cooling core making the flow path annular. To separate cesium from waste the media being considered is made of resorcinol formaldehyde resin deposited on spherical plastic beads and is a substitute for a previously tested resin made of crystalline silicotitanate. This spherical media not only has an advantage of being mechanically robust, but, unlike its predecessor, it is also reusable, that is, loaded cesium can be removed through elution and regeneration. Resin regeneration leads to more efficient operation and less spent resin waste, but its hydraulic performance in the planned ion exchange column was unknown. Moreover, the recycling process of this spherical resorcinol formaldehyde causes its volume to significantly shrink and swell. To determine the spherical media's hydraulic demand a linearly scaled column was designed and tested. The waste simulant used was prototypic of the wastes' viscosity and density. This paper discusses the hydraulic performance of the media that will be used to assist in the design of a full-scale unit.

  5. Ablative implosion of high-aspect-ratio gas-filled targets

    Energy Technology Data Exchange (ETDEWEB)

    Tomasel, F.G.; Cortazar, O.D. (Universidad Nacional de Mar del Plata (Argentina). Dept. de Fisica); Piriz, A.R. (Buenos Aires Univ. (Argentina). Dept. de Fisica)

    1991-11-01

    A simple analytical mode for the implosion of very thin spherical shell targets filled with fuel gas is developed. The shock trajectory in the fuel is described consistently with the shell acceleration, and two dimensionless parameters which govern the complete dynamics are found. The model applies to recent experiments focused on high neutron yield and provides a simple description of the main physical phenomena, which is in agreement with simulation and experiments. (author).

  6. Mechanical Design of High Lift Systems for High Aspect Ratio Swept Wings

    Science.gov (United States)

    Rudolph, Peter K. C.

    1998-01-01

    The NASA Ames Research Center is working to develop a methodology for the optimization and design of the high lift system for future subsonic airliners with the involvement of two partners. Aerodynamic analysis methods for two dimensional and three dimensional wing performance with flaps and slats deployed are being developed through a grant with the aeronautical department of the University of California Davis, and a flap and slat mechanism design procedure is being developed through a contract with PKCR, Inc., of Seattle, WA. This report documents the work that has been completed in the contract with PKCR on mechanism design. Flap mechanism designs have been completed for seven (7) different mechanisms with a total of twelve (12) different layouts all for a common single slotted flap configuration. The seven mechanisms are as follows: Simple Hinge, Upside Down/Upright Four Bar Linkage (two layouts), Upside Down Four Bar Linkages (three versions), Airbus A330/340 Link/Track Mechanism, Airbus A320 Link/Track Mechanism (two layouts), Boeing Link/Track Mechanism (two layouts), and Boeing 767 Hinged Beam Four Bar Linkage. In addition, a single layout has been made to investigate the growth potential from a single slotted flap to a vane/main double slotted flap using the Boeing Link/Track Mechanism. All layouts show Fowler motion and gap progression of the flap from stowed to a fully deployed position, and evaluations based on spanwise continuity, fairing size and number, complexity, reliability and maintainability and weight as well as Fowler motion and gap progression are presented. For slat design, the options have been limited to mechanisms for a shallow leading edge slat. Three (3) different layouts are presented for maximum slat angles of 20 deg, 15 deg and 1O deg all mechanized with a rack and pinion drive similar to that on the Boeing 757 airplane. Based on the work of Ljungstroem in Sweden, this type of slat design appears to shift the lift curve so that higher lift is achieved with the deployed slat with no increase in angle of attack. The layouts demonstrate that these slat systems can be designed with no need for slave links, and an experimental test program is outlined to experimentally validate the lift characteristics of the shallow slat.

  7. Finite element analysis of surface acoustic waves in high aspect ratio electrodes

    DEFF Research Database (Denmark)

    Dühring, Maria Bayard; Laude, Vincent; Khelif, Abdelkrim

    2008-01-01

    down the SAWvelocity because of mechanical energy storage. A finite model is furthermore employed to study the acousto-optical interaction and shows that it is possible to get a bigger change in effective refractive index with these surface acoustic waves compared to using conventional interdigital...

  8. Deposition of a-C:H films on inner surface of high-aspect-ratio microchannel

    Science.gov (United States)

    Hirata, Yuki; Choi, Junho

    2016-08-01

    Hydrogenated amorphous carbon (a-C:H) films were prepared on inner surface of 100-μm-width microchannel by using a bipolar-type plasma based ion implantation and deposition. The microchannel was fabricated using a silicon plate, and two kinds of microchannels were prepared, namely, with a bottom layer (open at one end) and without a bottom layer (open at both ends). The distribution of thickness and hardness of films was evaluated by SEM and nanoindentation measurements, respectively, and the microstructures of films were evaluated by Raman spectroscopy. Furthermore, the behavior of ions and radicals was analyzed simultaneously by combining the calculation methods of Particle-In-Cell/Monte Carlo Collision and Direct Simulation Monte Carlo to investigate the coating mechanism for the microchannel. It was found that the film thickness decreased as the depth of the coating position increased in the microchannels where it is open at one end. The uniformity of the film thickness improved by increasing the negative pulse voltage because ions can arrive at the deeper part of the microchannel. In addition, the hardness increased as the depth of the coating position increased. This is because the radicals do not arrive at the deeper part of the microchannel, and the incident proportion of ions relative to that of radicals increases, resulting in a high hardness due to the amorphization of the film. The opening area of the microchannel where the aspect ratio is very small, radicals dominate the incident flux, whereas ions prevail over radicals above an aspect ratio of about 7.5. On the other hand, in the microchannels that are open at both ends, there were great improvements in uniformity of the film thickness, hardness, and the film structure. The a-C:H films were successfully deposited on the entire inner surface of a microchannel with an aspect ratio of 20.

  9. High aspect-ratio MEMS devices for the next generation of THz/MHz passive components

    NARCIS (Netherlands)

    Fiorentino, G.

    2015-01-01

    The realization of efficient passive devices directly on chip represents one of the most intriguing challenges in IC fabrication processes. The performance of such devices are intrinsically determined by physical parameters that cannot be easily scaled, making the on-chip integration of such

  10. An Automated High Aspect Ratio Mesher for Computational Fluid Dynamics Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Computational fluid dynamics (CFD) simulations are routinely used while designing, analyzing, and optimizing air- and spacecraft. An important component of CFD...

  11. Interaction between photoresist pretreatment and high-aspect-ratio contact and via hole definition

    Science.gov (United States)

    Brown, Kevin C.; Insalaco, Linda J.; Szeto, Elina C.

    1993-09-01

    The relationship between photoresist treatment prior to etch and subsequent oxide sidewall hole profile is investigated. Etched features were examined immediately after resist pattern definition with post-expose bake, then after oven hard bake or deep UV photostabilization. It was observed that taper of the etched oxide profile depends on pre-treatment temperature. Etch chemistry influences the relative change in taper across a range of pre-treatment temperatures. `Bowing,' as well as reticulated or `burnt' resist is eliminated. Profile variation across the wafer is reduced with deep UV photostabilization. Microscopic etch uniformity (RIE lag) also depends on the interaction between resist pre-treatment and oxide etch chemistry.

  12. Filling high aspect ratio trenches by superconformal chemical vapor deposition: Predictive modeling and experiment

    Science.gov (United States)

    Wang, Wenjiao B.; Abelson, John R.

    2014-11-01

    Complete filling of a deep recessed structure with a second material is a challenge in many areas of nanotechnology fabrication. A newly discovered superconformal coating method, applicable in chemical vapor deposition systems that utilize a precursor in combination with a co-reactant, can solve this problem. However, filling is a dynamic process in which the trench progressively narrows and the aspect ratio (AR) increases. This reduces species diffusion within the trench and may drive the component partial pressures out of the regime for superconformal coating. We therefore derive two theoretical models that can predict the possibility for filling. First, we recast the diffusion-reaction equation for the case of a sidewall with variable taper angle. This affords a definition of effective AR, which is larger than the nominal AR due to the reduced species transport. We then derive the coating profile, both for superconformal and for conformal coating. The critical (most difficult) step in the filling process occurs when the sidewalls merge at the bottom of the trench to form the V shape. Experimentally, for the Mg(DMADB)2/H2O system and a starting AR = 9, this model predicts that complete filling will not be possible, whereas experimentally we do obtain complete filling. We then hypothesize that glancing-angle, long-range transport of species may be responsible for the better than predicted filling. To account for the variable range of species transport, we construct a ballistic transport model. This incorporates the incident flux from outside the structure, cosine law re-emission from surfaces, and line-of-sight transport between internal surfaces. We cast the transport probability between all positions within the trench into a matrix that represents the redistribution of flux after one cycle of collisions. Matrix manipulation then affords a computationally efficient means to determine the steady-state flux distribution and growth rate for a given taper angle. The ballistic transport model predicts a deeper position for the peak of the super-conformal growth rate than the diffusion-reaction model, and successfully explains the observation of complete filling. These models can be used to predict the behavior of any system given a small set of kinetic coefficients to describe the growth rate.

  13. High precision and high aspect ratio laser drilling: challenges and solutions

    Science.gov (United States)

    Uchtmann, Hermann; He, Chao; Gillner, Arnold

    2016-03-01

    Laser drilling is a very versatile tool to produce high accuracy bores in small and large geometries using different technologies. In large and deep hole drilling laser drilling can be found in drilling cooling holes into turbomachinery components such as turbine blades. In micro drilling, the technology is used for the generation of nozzles and filters. However, especially in macro drilling, the process often causes microstructure changes and induces defects such as recast layers and cracks. The defects are caused by the melt dominated drilling process by using pulse durations in the range of some 100 μm up to a few ms. A solution of this problem is the use of ultrashort pulsed laser radiation with pulse durations in the range of some 100 fs up to a few ps, however with the disadvantage of long drilling times. Thus, the aim of this work is to combine the productive process by using ms pulsed fiber laser radiation with subsequent ablation of existing recast layers at the hole wall by using ultrashort pulsed laser radiation. By using fast scanning techniques the recast layer can be avoided almost completely. With a similar technology also very small hole can be produced. Using a rotating dove prism a circular oscillation of the laser spots is performed and holes are drilled at intervals in 1 mm thick stainless steel (1.4301) by ultra-short laser pulses of 7 ps at 515 nm. The formation of hole and the behavior of energy deposition differ from other drilling strategies due to the helical revolution. The temporal evolution of the hole shape is analyzed by means of SEM techniques from which three drilling phases can be distinguished.

  14. Electromagnetic properties of flake-shaped Fe–Si alloy particles prepared by ball milling

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Lei [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Jiang, Jian-Tang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Wang, Zeng-Quan [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Gong, Yuan-Xun [Department of Physics, Harbin Institute of Technology, Harbin 150001 (China); Aerospace Research Institute of Special Material and Processing Technology, Beijing 100074 (China); Liu, Chao [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Zhen, Liang, E-mail: lzhen@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); MOE Key Laboratory of Micro-system and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080 (China)

    2014-11-15

    Flake-shaped Fe–Si alloy particles with high aspect ratios were fabricated by ball milling commercially available Fe–Si powder, aiming to fabricate high-performance microwave absorbing fillers for coatings applied in 1–4 GHz range. To compare with spherical particles, higher permittivity and permeability was observed by using flaky particles as fillers. High aspect ratios contributed to an enhanced dielectric relaxation in the 1–4 GHz band, resulting in an increased permittivity. The thin thickness together with the high resistivity of Fe–Si flakes was believed to be helpful for suppressing the effect of eddy current and thus lead to an increase in the permeability. The electromagnetic wave absorbing (EMA) performances were observed to be enhanced. With a thin thickness of 2 mm, a wide absorption band with a minimum reflection loss of −12 dB was achieved in 1–4 GHz range, when using 75 wt% of flaky Fe–Si particles as fillers. The study indicated that flake-shaped Fe–Si particles were a promising candidate for EMA materials in L and S bands. - Highlights: • Flaky Fe–Si alloy particles were prepared in large scale via a simple ball milling method. • Coatings containing flakes Fe–Si particles present excellent EMA performance in L–S band. • The high shape anisotropy and the thin thickness contribute to the excellent EM property.

  15. Alleviation of process-induced cracking of the antireflection TiN coating (ARC-TiN) in Al-Cu and Al-Cu-Si films

    CERN Document Server

    Peng, Y C; Yang, Y R; Hsieh, W Y; Hsieh, Y F

    1999-01-01

    The alleviation of cracking of the TiN-ARC layer on Al-Cu and Al-Cu-Si films after the development process has been achieved. For the TiN-ARC/Al-Cu system, the stress-induced defects decreased with increasing TiN-ARC layer thickness. In contrast, for the TiN-ARC/Al-Cu-Si system, Si nodules formed during cooling, thereby inducing poor coverage with high aspect-ratio holes. As a result, the photoresist developer penetrated through the films. Chemical vapor deposition of TiN-ARC or predeposition of a Ti Interposing layer was used to eliminate the formation of Si nodules.

  16. Monolithic integration of optical grade GaAs on Si (001) substrates deeply patterned at a micron scale

    Energy Technology Data Exchange (ETDEWEB)

    Bietti, Sergio; Scaccabarozzi, Andrea; Bonera, Emiliano; Miglio, Leo; Sanguinetti, Stefano [L-NESS and Dip. di Scienza dei Materiali, Universitá di Milano Bicocca, Via Cozzi 53, I–20125 Milano (Italy); Frigeri, Cesare [CNR-IMEM Institute, Parco Area delle Scienze 37/A, I–43100 Parma (Italy); Bollani, Monica [CNR–IFN, L–NESS, via Anzani 42, I–22100 Como (Italy); Falub, Claudiu V.; Känel, Hans von [Laboratory for Solid State Physics, ETH Zurich, Schafmattstrasse 16, CH-8093 Zurich (Switzerland)

    2013-12-23

    Dense arrays of micrometric crystals, with areal filling up to 93%, are obtained by depositing GaAs in a mask-less molecular beam epitaxy process onto Si substrates. The substrates are patterned into tall, micron sized pillars. Faceted high aspect ratio GaAs crystals are achieved by tuning the Ga adatom for short surface diffusion lengths. The crystals exhibit bulk-like optical quality due to defect termination at the sidewalls. Simultaneously, the thermal strain induced by different thermal expansion parameters of GaAs and Si is fully relieved. This opens the route to thick film applications without crack formation and wafer bowing.

  17. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-09-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m.

  18. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction.

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-09-22

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm(2)) at 75.7 MV/m.

  19. Integrated ZnO Nano-Electron-Emitter with Self-Modulated Parasitic Tunneling Field Effect Transistor at the Surface of the p-Si/ZnO Junction

    Science.gov (United States)

    Cao, Tao; Luo, Laitang; Huang, Yifeng; Ye, Bing; She, Juncong; Deng, Shaozhi; Chen, Jun; Xu, Ningsheng

    2016-01-01

    The development of high performance nano-electron-emitter arrays with well reliability still proves challenging. Here, we report a featured integrated nano-electron-emitter. The vertically aligned nano-emitter consists of two segments. The top segment is an intrinsically lightly n-type doped ZnO nano-tip, while the bottom segment is a heavily p-type doped Si nano-pillar (denoted as p-Si/ZnO nano-emitter). The anode voltage not only extracted the electron emission from the emitter apex but also induced the inter-band electron tunneling at the surface of the p-Si/ZnO nano-junction. The designed p-Si/ZnO emitter is equivalent to a ZnO nano-tip individually ballasted by a p-Si/ZnO diode and a parasitic tunneling field effect transistor (TFET) at the surface of the p-Si/ZnO junction. The parasitic TFET provides a channel for the supply of emitting electron, while the p-Si/ZnO diode is benefit for impeding the current overloading and prevent the emitters from a catastrophic breakdown. Well repeatable and stable field emission current were obtained from the p-Si/ZnO nano-emitters. High performance nano-emitters was developed using diamond-like-carbon coated p-Si/ZnO tip array (500 × 500), i.e., 178 μA (4.48 mA/cm2) at 75.7 MV/m. PMID:27654068

  20. A study of high-altitude manned research aircraft employing strut-braced wings of high-aspect-ratio

    Science.gov (United States)

    Smith, P. M.; Deyoung, J.; Lovell, W. A.; Price, J. E.; Washburn, G. F.

    1981-01-01

    The effect of increased wing aspect ratio of subsonic aircraft on configurations with and without strut bracing. Results indicate that an optimum cantilever configuration, with a wing aspect ratio of approximately 26, has a 19% improvement in cruise range when compared to a baseline concept with a wing aspect ratio of approximately 10. An optimum strut braced configuration, with a wing aspect ratio of approximately 28, has a 31% improvment in cruise range when compared to the same baseline concept. This improvement is mainly due to the estimated reduction in wing weight resulting from use of lifting struts. All configurations assume the same mission payload and fuel. The drag characteristics of the wings are enhanced with the use of laminar flow airfoils. A method for determining the extent of attainable natural laminar flow, and methods for preliminary structural design and for aerodynamic analysis of wings lifting struts are presented.

  1. Tailoring the Mechanical Properties of High-Aspect-Ratio Carbon Nanotube Arrays using Amorphous Silicon Carbide Coatings

    NARCIS (Netherlands)

    Poelma, R.H.; Morana, B.; Vollebregt, S.; Schlangen, H.E.J.G.; Van Zeijl, H.W.; Fan, X.; Zhang, G.Q.

    2014-01-01

    The porous nature of carbon nanotube (CNT) arrays allows for the unique opportunity to tailor their mechanical response by the infiltration and deposition of nanoscale conformal coatings. Here, we fabricate novel photo-lithographically defined CNT pillars that are conformally coated with amorphous s

  2. Multi-Objective Flight Control for Drag Minimization and Load Alleviation of High-Aspect Ratio Flexible Wing Aircraft

    Science.gov (United States)

    Nguyen, Nhan; Ting, Eric; Chaparro, Daniel; Drew, Michael; Swei, Sean

    2017-01-01

    As aircraft wings become much more flexible due to the use of light-weight composites material, adverse aerodynamics at off-design performance can result from changes in wing shapes due to aeroelastic deflections. Increased drag, hence increased fuel burn, is a potential consequence. Without means for aeroelastic compensation, the benefit of weight reduction from the use of light-weight material could be offset by less optimal aerodynamic performance at off-design flight conditions. Performance Adaptive Aeroelastic Wing (PAAW) technology can potentially address these technical challenges for future flexible wing transports. PAAW technology leverages multi-disciplinary solutions to maximize the aerodynamic performance payoff of future adaptive wing design, while addressing simultaneously operational constraints that can prevent the optimal aerodynamic performance from being realized. These operational constraints include reduced flutter margins, increased airframe responses to gust and maneuver loads, pilot handling qualities, and ride qualities. All of these constraints while seeking the optimal aerodynamic performance present themselves as a multi-objective flight control problem. The paper presents a multi-objective flight control approach based on a drag-cognizant optimal control method. A concept of virtual control, which was previously introduced, is implemented to address the pair-wise flap motion constraints imposed by the elastomer material. This method is shown to be able to satisfy the constraints. Real-time drag minimization control is considered to be an important consideration for PAAW technology. Drag minimization control has many technical challenges such as sensing and control. An initial outline of a real-time drag minimization control has already been developed and will be further investigated in the future. A simulation study of a multi-objective flight control for a flight path angle command with aeroelastic mode suppression and drag minimization demonstrates the effectiveness of the proposed solution. In-flight structural loads are also an important consideration. As wing flexibility increases, maneuver load and gust load responses can be significant and therefore can pose safety and flight control concerns. In this paper, we will extend the multi-objective flight control framework to include load alleviation control. The study will focus initially on maneuver load minimization control, and then subsequently will address gust load alleviation control in future work.

  3. Oxidative Unzipping and Transformation of High Aspect Ratio Boron Nitride Nanotubes into “White Graphene Oxide” Platelets

    Science.gov (United States)

    Nautiyal, Pranjal; Loganathan, Archana; Agrawal, Richa; Boesl, Benjamin; Wang, Chunlei; Agarwal, Arvind

    2016-07-01

    Morphological and chemical transformations in boron nitride nanotubes under high temperature atmospheric conditions is probed in this study. We report atmospheric oxygen induced cleavage of boron nitride nanotubes at temperatures exceeding 750 °C for the first time. Unzipping is then followed by coalescence of these densely clustered multiple uncurled ribbons to form stacks of 2D sheets. FTIR and EDS analysis suggest these 2D platelets to be Boron Nitride Oxide platelets, with analogous structure to Graphene Oxide, and therefore we term them as “White Graphene Oxide” (WGO). However, not all BNNTs deteriorate even at temperatures as high as 1000 °C. This leads to the formation of a hybrid nanomaterial system comprising of 1D BN nanotubes and 2D BN oxide platelets, potentially having advanced high temperature sensing, radiation shielding, mechanical strengthening, electron emission and thermal management applications due to synergistic improvement of multi-plane transport and mechanical properties. This is the first report on transformation of BNNT bundles to a continuous array of White Graphene Oxide nanoplatelet stacks.

  4. Conductivity and methanol permeability of Nafion-zirconium phosphate composite membranes containing high aspect ratio filler particles

    Energy Technology Data Exchange (ETDEWEB)

    Bagnasco, G.; Micoli, L.; Turco, M. [Dipartimento di Ingegneria Chimica, Universita di Napoli Federico II, P.le V. Tecchio 80, 80125 - Napoli (Italy); Donnadio, A.; Pica, M.; Sganappa, M. [Dipartimento di Chimica, Universita di Perugia, via Elce di Sotto 8, 06123 - Perugia (Italy); Casciola, M.

    2009-08-15

    Gels of exfoliated {alpha}-zirconium phosphate (ZrP{sub exf}) in dimethylformamide (DMF) were used to prepare Nafion/ZrP{sub exf} composite membranes with filler loadings up to 7 wt.-% by casting mixtures of Nafion 1100 solutions in DMF and suitable amounts of 2 wt.-% ZrP gels in DMF. TEM pictures showed that the ZrP{sub exf} particles had aspect ratio of at least 20. All samples were characterised by methanol permeability (P) and through-plane ({sigma}{sub thp}) and in-plane ({sigma}{sub inp}) conductivity measurements at 40 C and 100% RH. The methanol permeability of Nafion membranes containing in situ grown ZrP particles with low aspect ratio (Nafion/ZrP{sub isg}) was also determined. The methanol permeability and the swelling behaviour of the composite membranes turned out to be strongly dependent on the filler morphology. As a general trend, both permeability and swelling decreased according to the sequence: Nafion/ZrP{sub isg} > Nafion > Nafion/ZrP{sub exf}. The maximum selectivity ({sigma}{sub thp}/P = 1.4 x 10{sup 5} S cm{sup -3} s) was found for the membrane filled with 1 wt.-% ZrP{sub exf}: this value is seven times higher than that of Nafion. For the Nafion/ZrP{sub exf} membranes, the ratio {sigma}{sub inp}/{sigma}{sub thp} increases with the filler loading, thus indicating that the preferred orientation of the ZrP sheets is parallel to the membrane surface. (Abstract Copyright [2009], Wiley Periodicals, Inc.)

  5. Direct Observation of Two Phase Flow Generated by an Alumina Seeded Grain in High Aspect Ratio Channels

    Science.gov (United States)

    2010-06-01

    and the characteristic length is 44.45 mm. Finally, the convection coefficient is calculated to be 298 W/m2*K. Incropera and Dewitt note that...Advanced Strength and Applied Elasticity (4th ed.). Upper Saddle, NJ: Prentice Hall PTR, 2003. [11] F. P. Incropera and D. P. DeWitt

  6. Fabricating and Tailoring Polyaniline (PANI) Nanofibers with High Aspect Ratio in a Low-Acid Environment in a Magnetic Field.

    Science.gov (United States)

    Ma, Yong; Chen, Yanhui; Mei, Ang; Qiao, Mingtao; Hou, Chunping; Zhang, Hepeng; Zhang, Qiuyu

    2016-01-01

    In a 0.010 m HCl solution, we successfully transformed irregular polyaniline (PANI) agglomerates into uniform PANI nanofibers with a diameter of 46-145 nm and a characteristic length on the order of several microns by the addition of superparamagnetic Fe3 O4 microspheres in a magnetic field. The PANI morphological evolution showed that the PANI nanofibers stemmed from the PANI coating shell synthesized on the surface of the Fe3 O4 microsphere chains. It was found that the magnetic field could optimize the PANI nanofibers with a narrow diameter size distribution, and effectively suppressed secondary growth. When compared with other microspheres (like silica and polystyrene), only the use of superparamagnetic Fe3 O4 microspheres resulted in the appearance of PANI nanofibers. Attempts to form these high-quality PANI nanofibers in other concentrations of HCl solution were unsuccessful. This deficiency was largely attributed to the inappropriate quantity of aniline cations. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Internal Laser Writing of High-Aspect-Ratio Microfluidic Structures in Silicate Glasses for Lab-on-a-Chip Applications

    Directory of Open Access Journals (Sweden)

    Ya Cheng

    2017-02-01

    Full Text Available Femtosecond laser direct writing is unique in allowing for fabrication of 3D micro- and nanofluidic structures, thereby enabling rapid and efficient manipulation of fluidic dynamics in 3D space to realize innovative functionalities. Here, I discuss the challenges in producing fully functional and highly integrated 3D micro- and nanofluidic systems with potential applications ranging from chemical and biological analyses to investigations of nanofluidic behaviors. In particular, I review the achievements we have made in the past decade, which have led to 3D microchannels with controllable cross-sectional profiles and large aspect ratios, 3D nanofluidic channels with widths of several tens of nanometers, and smooth inner walls with roughness on the order of ~1 nm. Integration of the microfluidics with other functional microcomponents including microoptics and microelectrodes will also be discussed, followed by conclusions and the future perspective.

  8. BisGMA/TEGDMA dental nanocomposites containing glyoxylic acid modified high-aspect ratio hydroxyapatite nanofibers with enhanced dispersion

    Science.gov (United States)

    Chen, Liang; Xu, Changqi; Wang, Yong; Shi, Jian; Yu, Qingsong

    2012-01-01

    The purpose of this research was to investigate the influence of the glyoxylic acid (GA) modification of hydroxyapatite (HAP) nanofibers on their dispersion in bisphenol A glycidyl methacrylate (BisGMA)/triethylene glycol dimethacrylate (TEGDMA) dental composites and also investigate the mechanical properties, water absorption, and water solubility of the resulting dental resins and composites. Scanning/Transmission electron microscopy (STEM) images showed that microsized HAP nanofiber bundles could be effectively broken down to individual HAP nanofibers with an average length of ~15 μm after the surface modification process. Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS) and thermal gravimetric analysis (TGA) characterization confirmed glyoxylic acid was chemically grafted on the HAP nanofiber surface, hypothetically by reacting with the amine group on HAP nanofiber surface. The enhanced dispersion of HAP nanofibers in dental matrix led to increased biaxial flexural strength (BFS) compared with the corresponding dental resins and composites filled with untreated HAP nanofibers. In addition, impregnation of small mass fractions of the glyoxylic acid modified HAP nanofibers into the BisGMA/TEGDMA dental resins (5wt%, 10wt%) or composites (2wt%, 3wt%) could also substantially improve the BFS in comparison with the controls(pure resins or dental composites filled with silica particles alone). Larger mass fractions could not further increase the mechanical property or even degrade the BFS values. Water behavior testing results indicated that the addition of glyoxylic acid modified HAP nanofibers resulted in higher water absorption and water solubility values which is not preferred for clinical application. In summary, well dispersed HAP nanofibers and their dental composites with enhanced mechanical property have been successfully fabricated but the water absorption and water solubility of such dental composites need to be further improved. PMID:22689264

  9. BisGMA/TEGDMA dental nanocomposites containing glyoxylic acid modified high-aspect ratio hydroxyapatite nanofibers with enhanced dispersion

    OpenAIRE

    Chen, Liang; Xu, Changqi; Wang,Yong; Shi, Jian; Yu, Qingsong; Li, Hao

    2012-01-01

    The purpose of this research was to investigate the influence of the glyoxylic acid (GA) modification of hydroxyapatite (HAP) nanofibers on their dispersion in bisphenol A glycidyl methacrylate (BisGMA)/triethylene glycol dimethacrylate (TEGDMA) dental composites and also investigate the mechanical properties, water absorption, and water solubility of the resulting dental resins and composites. Scanning/Transmission electron microscopy (STEM) images showed that microsized HAP nanofiber bundle...

  10. Design and microfabrication of a high-aspect-ratio PDMS microbeam array for parallel nanonewton force measurement and protein printing

    Science.gov (United States)

    Sasoglu, F. M.; Bohl, A. J.; Layton, B. E.

    2007-03-01

    Cell and protein mechanics has applications ranging from cellular development to tissue engineering. Techniques such as magnetic tweezers, optic tweezers and atomic force microscopy have been used to measure cell deformation forces of the order of piconewtons to nanonewtons. In this study, an array of polymeric polydimethylsiloxane (PDMS) microbeams with diameters of 10-40 µm and lengths of 118 µm was fabricated from Sylgard® with curing agent concentrations ranging from 5% to 20%. The resulting spring constants were 100-300 nN µm-1. The elastic modulus of PDMS was determined experimentally at different curing agent concentrations and found to be 346 kPa to 704 kPa in a millimeter-scale array and ~1 MPa in a microbeam array. Additionally, the microbeam array was used to print laminin for the purpose of cell adhesion. Linear and nonlinear finite element analyses are presented and compared to the closed-from solution. The highly compliant, transparent, biocompatible PDMS may offer a method for more rapid throughput in cell and protein mechanics force measurement experiments with sensitivities necessary for highly compliant structures such as axons.

  11. Acoustic Scattering from Sand Dollars (Dendraster excentricus): Modeling as High Aspect Ratio Oblate Objects and Comparison to Experiment

    Science.gov (United States)

    2008-09-01

    naturally occurring dense collections. These benthic echinoderms can form concentrations of up to several hundred per square meter in the sandy, shallow...L. (1972). “A new approach to the shaded picture problem”, Proc ACM National Conf. Nichols, D. (1969). Echinoderms , 4th edition (Hutchinson & Co

  12. Narrow conductive structures with high aspect ratios through single-pass inkjet printing and evaporation-induced dewetting

    NARCIS (Netherlands)

    Abbel, R.; Teunissen, P.; Michels, J.; Groen, W.A.

    2015-01-01

    Inkjet printed silver lines contract to widths below 20-μm during drying on an organic planarization coating. Aspect ratios previously unprecedented with single pass inkjet printing on isotropic homogeneous substrates are obtained. This effect is caused by the subsequent evaporation of solvents from

  13. Application of Self-Assembled Monolayers to the Electroless Metallization of High Aspect Ratio Vias for Microelectronics

    Science.gov (United States)

    Bernasconi, R.; Molazemhosseini, A.; Cervati, M.; Armini, S.; Magagnin, L.

    2016-10-01

    All-wet electroless metallization of through-silicon vias (TSVs) with a width of 5 μm and a 1:10 aspect ratio was carried out. Immersion in a n-(2-aminoethyl) 3-aminopropyl-trimethoxysilane (AEAPTMS) self-assembled monolayer (SAM) was used to enhance the adhesion between the metal film and substrate. Contact angle variation and atomic force microscopy were used to verify the formation of a SAM layer. A PdCl2 solution was later used to activate the silanized substrates, exploiting the affinity of the -NH3 functional group of AEAPTMS to palladium. A nickel-phosphorus-boron electroless bath was employed to deposit the first barrier layer onto silicon. The NiPB growth rate was evaluated on flat silicon wafers, while the structure of the coating obtained was investigated via glow discharge optical emission spectroscopy. Cross-sectional scanning electron microscope observations were carried out on metallized TSVs to characterize the NiPB seed, the Cu seed layer deposited with a second electroless step, and the Cu superfilling obtained with a commercial solution. Complete filling of TSV was achieved.

  14. An implicit wetting and drying approach for non-hydrostatic baroclinic flows in high aspect ratio domains

    Science.gov (United States)

    Candy, A. S.

    2017-04-01

    A new approach to modelling free surface flows is developed that enables, for the first time, 3D consistent non-hydrostatic baroclinic physics that wets and drys in the large aspect ratio spatial domains that characterise geophysical systems. This is key in the integration of physical models to permit seamless simulation in a single consistent arbitrarily unstructured multiscale and multi-physics dynamical model. A high order continuum representation is achieved through a general Galerkin finite element formulation that guarantees local and global mass conservation, and consistent tracer advection. A flexible spatial discretisation permits conforming domain bounds and a variable spatial resolution, whilst atypical use of fully implicit time integration ensures computational efficiency. Notably this brings the natural inclusion of non-hydrostatic baroclinic physics and a consideration of vertical inertia to flood modelling in the full 3D domain. This has application in improving modelling of inundation processes in geophysical domains, where dynamics proceeds over a large range of horizontal extents relative to vertical resolution, such as in the evolution of a tsunami, or in urban environments containing complex geometric structures at a range of scales.

  15. Sacrificial structures for deep reactive ion etching of high-aspect ratio kinoform silicon x-ray lenses

    DEFF Research Database (Denmark)

    Stöhr, Frederik; Michael-Lindhard, Jonas; Hübner, Jörg

    2015-01-01

    investigated how sacrificial structures in the form of guarding walls and pillars may be utilized to facilitate accurate control of the etch profile. Unlike other sacrificial structuring approaches, no silicon-on-insulator substrates or multiple lithography steps are required. In addition, the safe removal...

  16. Fabrication of High Aspect Ratio Through-Wafer Vias in CMOS Wafers for 3-D Packaging Applications

    DEFF Research Database (Denmark)

    Rasmussen, Frank Engel; Frech, J.; Heschel, M.

    2003-01-01

    A process for fabrication of through-wafer vias in CMOS wafers is presented. The process presented offers simple and well controlled fabrication of through-wafer vias using DRIE formation of wafer through-holes, low temperature deposition of through-hole insulation, doubled sided sputtering of Cr....../Au, and electroless deposition of Cu. A novel characteristic of the process is the use of a metal etch stop layer providing perfect control of the etch profile of the wafer through-holes in combination with a remarkably improved etch uniformity across the wafer. Excellent through-hole insulation is provided through...

  17. Fundamentals of figure control and fracture-'free' finishing for high aspect ratio laser optics

    Energy Technology Data Exchange (ETDEWEB)

    Suratwala, Tayyab [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2014-10-01

    The high level objectives of the this work were to: 1) scientifically understand critical phenomena affecting the surface figure during full aperture finishing; 2) utilize these fundamentals to more deterministically control the surface figure during finishing; 3) successfully polish under rogue particle-‘free’ environments during polishing by understanding/preventing key sources of rogue particles.

  18. Fabrication of high-aspect-ratio microstructures in polymer microfluid chips for in vitro single-cell analysis

    Science.gov (United States)

    Bukatin, A. S.; Mukhin, I. S.; Malyshev, E. I.; Kukhtevich, I. V.; Evstrapov, A. A.; Dubina, M. V.

    2016-10-01

    Technologies and methods of prototyping microfluidic devices are widely used in solving many biological problems and testing of operability of new microanalytic systems. This study is devoted to analyzing the features of the formation of microstructures in SU-8 photoresist and the preparation of replicas in polydimethyl siloxane by the soft lithography method. It has been shown that the aspect ratio of the resultant microstructures is determined by their shape, size, and the force of resist adhesion to the silicon substrate and the efficiency of the circulation of the developer around microstructures. In the replication of complex microstructures, an aspect ratio of 25 is attained. The technology considered here is used to prepare microfluidic chips with mechanical traps for fixation and the in vitro analysis of living cells.

  19. Effect of ac electrodeposition conditions on the growth of high aspect ratio copper nanowires in porous aluminum oxide templates.

    Science.gov (United States)

    Gerein, Nathan J; Haber, Joel A

    2005-09-22

    The effect of several deposition parameters on the uniformity of copper electrodeposition through the alumina barrier layer into porous aluminum oxide templates grown in sulfuric or oxalic acid was systematically investigated. A fractional factorial design of experiment was conducted to find suitable deposition conditions among the variables: frequency, voltage, pulsed or continuous deposition, electrolyte concentration, and barrier layer thinning voltage. Continuous ac sine wave deposition conditions yielded excellent uniformity of pore-filling but damaged the porous aluminum oxide templates when deposition was continued to grow bulk copper on the surface. Pulsed electrodeposition yielded comparable uniformity of pore-filling and no damage to the porous aluminum oxide templates, even when bulk copper was deposited on them. Further optimization of pulsed deposition conditions was accomplished by comparing square and sine waveforms and pulse polarity. Pulsed square waveforms produced better pore-filling than pulsed sine waveforms. For sine wave depositions, the oxidative/reductive pulse polarity was more efficient than the commonly used reductive/oxidative pulse polarity. For square wave depositions into sulfuric acid grown pores, the reductive/oxidative pulse polarity produces more uniform pore-filling, likely as a result of enhanced resonant tunneling through the barrier layer and reoxidation of copper in faster filling pores.

  20. Opportunities for high aspect ratio micro-electro-magnetic-mechanical systems (HAR-MEMMS) at Lawrence Berkeley Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Hunter, S. [ed.

    1993-10-01

    This report contains viewgraphs on the following topics: Opportunities for HAR-MEMMS at LBL; Industrial Needs and Opportunities; Deep Etch X-ray Lithography; MEMS Activities at BSAC; DNA Amplification with Microfabricated Reaction Chamber; Electrochemistry Research at LBL; MEMS Activities at LLNL; Space Microsensors and Microinstruments; The Advanced Light Source; Institute for Micromaching; IBM MEMS Interests; and Technology Transfer Opportunities at LBL.

  1. Functionalized Nano-Film Microchannel Plate: A Single High Aspect Ratio Device for High Resolution, Low Noise Astronomical Imaging Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed innovation is to apply proven nano-film technology to enable Microchannel plate (MCP) devices to be manufactured on a range of insulating substrates and...

  2. Functionalized Nano-Film Microchannel Plate: A Single High Aspect Ratio Device for High Resolution, Low Noise Astronomical Imaging Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Atomic layer deposited functional nano-film technology is used to manufacture Microchannel plate (MCP) devices capable of high gain / low ion feedback operation, on...

  3. A high aspect ratio SU-8 fabrication technique for hollow microneedles for transdermal drug delivery and blood extraction

    Science.gov (United States)

    Chaudhri, Buddhadev Paul; Ceyssens, Frederik; De Moor, Piet; Van Hoof, Chris; Puers, Robert

    2010-06-01

    Protein drugs, e.g. hormonal drugs, cannot be delivered orally to a patient as they get digested in the gastro-intestinal (GI) tract. Thus, it is imperative that these kinds of drugs are delivered transdermally through the skin. To provide for real-time feedback as well as to test independently for various substances in the blood, we also need a blood sampling system. Microneedles can perform both these functions. Further, microneedles made of silicon or metal have the risk of breaking inside the skin thereby leading to complications. SU-8, being approved of as being biocompatible by the Food and Drug Agency (FDA) of the United States, is an attractive alternative because firstly it is a polymer material, thereby reducing the chances of breakages inside the skin, and secondly it is a negative photoresist, thereby leading to ease of fabrication. Thus, here we present very tall (around 1600 µm) SU-8 polymer-based hollow microneedles fabricated by a simple and repeatable process, which are a very good candidate for transdermal drug delivery as well as blood extraction. The paper elaborates on the details that allow the fabrication of such extreme aspect ratios (>100).

  4. Tailoring the Mechanical Properties of High-Aspect-Ratio Carbon Nanotube Arrays using Amorphous Silicon Carbide Coatings

    NARCIS (Netherlands)

    Poelma, R.H.; Morana, B.; Vollebregt, S.; Schlangen, H.E.J.G.; Van Zeijl, H.W.; Fan, X.; Zhang, G.Q.

    2014-01-01

    The porous nature of carbon nanotube (CNT) arrays allows for the unique opportunity to tailor their mechanical response by the infiltration and deposition of nanoscale conformal coatings. Here, we fabricate novel photo-lithographically defined CNT pillars that are conformally coated with amorphous

  5. Real time ablation rate measurement during high aspect-ratio hole drilling with a 120-ps fiber laser

    National Research Council Canada - National Science Library

    Mezzapesa, Francesco P; Sibillano, Teresa; Di Niso, Francesca; Ancona, Antonio; Lugarà, Pietro M; Dabbicco, Maurizio; Scamarcio, Gaetano

    2012-01-01

    .... The time dependence of the laser ablation process within the depth of aluminum and stainless steel targets has been investigated to study the evolution of the material removal rate in high aspect...

  6. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Cao, J. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  7. Efficient Si photovoltaic devices with integrated micro/nano holes

    Science.gov (United States)

    Cansizoglu, Hilal; Gao, Yang; Kaya, Ahmet; Ghandiparsi, Soroush; Polat, Kazim G.; Wang, Yichuan; Zhang, Runzhou; Reggad, Hind; Mayet, Ahmed; Ponizovskaya Devine, Ekaterina; Islam, M. Saif

    2016-09-01

    Efficient light harvesting in a thin layer of crystalline Si can be realized by implementing nanoscale pillars and holes to the device structure. The major drawback of the pillars and holes based photovoltaic devices is high surface to volume ratio, contributing to an increase in surface recombination rate of the photo-generated carriers. The common techniques used in pillars/holes fabrication such as dry etching make the surface even worse by bombarding it with high energy ions. Therefore, such damaged surfaces of high aspect ratio structures need to be effectively passivated. In this study, we demonstrate a hole based thin crystalline Si photovoltaic device with enhanced open circuit voltage and short circuit current after a successful surface passivation process through a wet oxidation. In addition, the effect of passivation layer fabricated by rapid thermal oxide growth on photo response is investigated. A successful fabrication of thin crystalline Si solar cells can lead to the applications of ultra-thin, highly efficient, flexible and wearable energy sources.

  8. Controlling the Geometries of Si Nanowires through Tunable Nanosphere Lithography.

    Science.gov (United States)

    Li, Luping; Fang, Yin; Xu, Cheng; Zhao, Yang; Wu, Kedi; Limburg, Connor; Jiang, Peng; Ziegler, Kirk J

    2017-02-14

    A tunable nanosphere lithography (NSL) technique is combined with metal-assisted etching of silicon (Si) to fabricate ordered, high-aspect-ratio Si nanowires. Non-close-packed structures are directly prepared via shear-induced ordering of the nanospheres. The spacing between the nanospheres is independent of their diameters and tuned by changing the loading of nanospheres. Nanowires with spacings between 110 and 850 nm are easily achieved with diameters between 100 and 550 nm. By eliminating plasma or heat treatment of the nanospheres, the diameter of the nanowires fabricated is nearly identical to the nanosphere diameter in the suspension. The elimination of this step helps avoid common drawbacks of traditional NSL approaches, leading to the high-fidelity, large-scale fabrication of highly crystalline, nonporous Si nanowires in ordered hexagonal patterns. The ability to simultaneously control the diameter and spacing makes the NSL technique more versatile and expands the range of geometries that can be fabricated by top-down approaches.

  9. Tailoring broadband light trapping of GaAs and Si substrates by self-organised nanopatterning

    Energy Technology Data Exchange (ETDEWEB)

    Martella, C.; Chiappe, D.; Mennucci, C.; Buatier de Mongeot, F. [Dipartimento di Fisica, Università di Genova, via Dodecaneso 33, I-16146 Genova (Italy)

    2014-05-21

    We report on the formation of high aspect ratio anisotropic nanopatterns on crystalline GaAs (100) and Si (100) substrates exploiting defocused Ion Beam Sputtering assisted by a sacrificial self-organised Au stencil mask. The tailored optical properties of the substrates are characterised in terms of total reflectivity and haze by means of integrating sphere measurements as a function of the morphological modification at increasing ion fluence. Refractive index grading from sub-wavelength surface features induces polarisation dependent anti-reflection behaviour in the visible-near infrared (VIS-NIR) range, while light scattering at off-specular angles from larger structures leads to very high values of the haze functions in reflection. The results, obtained for an important class of technologically relevant materials, are appealing in view of photovoltaic and photonic applications aiming at photon harvesting in ultrathin crystalline solar cells.

  10. Reductively Responsive Hydrogel Nanoparticles with Uniform Size, Shape, and Tunable Composition for Systemic siRNA Delivery in Vivo.

    Science.gov (United States)

    Ma, Da; Tian, Shaomin; Baryza, Jeremy; Luft, J Christopher; DeSimone, Joseph M

    2015-10-01

    To achieve the great potential of siRNA based gene therapy, safe and efficient systemic delivery in vivo is essential. Here we report reductively responsive hydrogel nanoparticles with highly uniform size and shape for systemic siRNA delivery in vivo. "Blank" hydrogel nanoparticles with high aspect ratio were prepared using continuous particle fabrication based on PRINT (particle replication in nonwetting templates). Subsequently, siRNA was conjugated to "blank" nanoparticles via a disulfide linker with a high loading ratio of up to 18 wt %, followed by surface modification to enhance transfection. This fabrication process could be easily scaled up to prepare large quantity of hydrogel nanoparticles. By controlling hydrogel composition, surface modification, and siRNA loading ratio, siRNA conjugated nanoparticles were highly tunable to achieve high transfection efficiency in vitro. FVII-siRNA conjugated nanoparticles were further stabilized with surface coating for in vivo siRNA delivery to liver hepatocytes, and successful gene silencing was demonstrated at both mRNA and protein levels.

  11. Microwave absorption properties of FeSi flaky particles prepared via a ball-milling process

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Chao [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Yuan, Yong [Precision Machinery Research Institute of Shanghai Space Flight Academy, Shanghai 201600 (China); Jiang, Jian-tang [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); Gong, Yuan-xun [Aerospace Research Institute of Special Material and Processing Technology, Beijing 100074 (China); Zhen, Liang, E-mail: lzhen@hit.edu.cn [School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001 (China); MOE Key Laboratory of Micro-system and Micro-structures Manufacturing, Harbin Institute of Technology, Harbin 150080 (China)

    2015-12-01

    Flaky FeSi alloy particles with different aspect ratio were produced via ball-milling and a subsequent annealing. The microstructure and the morphology of the particles were examined by XRD and SEM. The dc resistivity, the static magnetization properties and electromagnetic properties were measured. Particles with high aspect ratio were found possess high permittivity and permeability. On the other hand, the variation of grain size and defects density was found influence the permittivity and permeability. High specific area was believed contribute to the intense dielectric loss and the high shape magnetic anisotropy lead to high permeability in the target band. Increased electromagnetic parameters compel the absorption peak’s shift to lower frequency. Coating using flaky FeSi particles milled for 12 h as fillers presented a reflection loss of −10 dB at 2 GHz and a matching thickness of 1.88 mm. The flaky FeSi alloy particles prepared through ball-milling and annealing can be promising candidates for EMA application at 1–4 GHz band. - Highlights: • Large quantity of flakey FeSi particles were produced through a simple way. • Coatings with as-milled FeSi particles exhibit excellent EMA performance in L-S band. • Shape and size of particles can be controlled via adjusting the ball-milling time. • Shape/size along with the microstructure influence the electromagnetic properties. • Shape/size contribute more to the excellent EMA performance compared to microstructure.

  12. High Density of Aligned Nanowire Treated with Polydopamine for Efficient Gene Silencing by siRNA According to Cell Membrane Perturbation.

    Science.gov (United States)

    Nair, Baiju G; Hagiwara, Kyoji; Ueda, Motoki; Yu, Hsiao-Hua; Tseng, Hsian-Rong; Ito, Yoshihiro

    2016-07-27

    High aspect ratio nanomaterials, such as vertically aligned silicon nanowire (SiNW) substrates, are three-dimensional topological features for cell manipulations. A high density of SiNWs significantly affects not only cell adhesion and proliferation but also the delivery of biomolecules to cells. Here, we used polydopamine (PD) that simply formed a thin coating on various material surfaces by the action of dopamine as a bioinspired approach. The PD coating not only enhanced cell adhesion, spreading, and growth but also anchored more siRNA by adsorption and provided more surface concentration for substrate-mediated delivery. By comparing plain and SiNW surfaces with the same amount of loaded siRNA, we quantitatively found that PD coating efficiently anchored siRNA on the surface, which knocked down the expression of a specific gene by RNA interference. It was also found that the interaction of SiNWs with the cell membrane perturbed the lateral diffusion of lipids in the membrane by fluorescence recovery after photobleaching. The perturbation was considered to induce the effective delivery of siRNA into cells and allow the cells to carry out their biological functions. These results suggest promising applications of PD-coated, high-density SiNWs as simple, fast, and versatile platforms for transmembrane delivery of biomolecules.

  13. Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO{sub 2}/Si substrate

    Energy Technology Data Exchange (ETDEWEB)

    Çalışkan, Deniz, E-mail: dcaliskan@fen.bilkent.edu.tr [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, 06800 Beytepe, Ankara (Turkey); Bütün, Bayram; Çakır, M. Cihan [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Özcan, Şadan [Department of Physics Engineering, Hacettepe University, 06800 Beytepe, Ankara (Turkey); Özbay, Ekmel [Nanotechnology Research Center, Bilkent University, 06800 Bilkent, Ankara (Turkey); Department of Electrical and Electronics Engineering and Department of Physics, Bilkent University, 06800 Bilkent, Ankara (Turkey)

    2014-10-20

    ZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO{sub 2} on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100 V bias, corresponding to 100 pA/cm{sup 2} current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100 V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio and dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation.

  14. Variable Deflection Response of Sensitive CNT-on-Fiber Artificial Hair Sensors from CNT Synthesis in High Aspect Ratio Microcavities (Postprint)

    Science.gov (United States)

    2015-04-01

    microstructures such as tailored hair shapes, micro-antennae, brushes, or filters . The CNT arrays are synthesized in a 1” diameter quartz tube furnace...Microstructure Growth,” ACS Nano, 8(6), 5799-5812 (2014). [17] P. B. Amama, C. L. Pint, L. McJilton et al., “Role of Water in Super Growth of Single...Garcia et al., “High-yield growth and morphology control of aligned carbon nanotubes on ceramic fibers for multifunctional enhancement of structural

  15. Influence of Alkyl Trimethyl Ammonium Bromides on Hydrothermal Formation of α-CaSO4·0.5H2O Whiskers with High Aspect Ratios

    Directory of Open Access Journals (Sweden)

    Ruosong Chen

    2017-01-01

    Full Text Available In this paper, the influence of alkyl trimethyl ammonium bromides (CnH2n+1(CH33NBr, n = 10, 12, 14, 16, 18, abbreviated as ATAB on the formation of alpha calcium sulfate hemihydrate (α-CaSO4·0.5H2O whiskers under a hydrothermal condition (135 °C, 3.0 h was analyzed. Specifically, it focuses on cetyl trimethyl ammonium bromide (C16H33(CH33NBr, abbreviated as CTAB. The rising CTAB concentration from 0 to 9.2 × 10−4 mol·L−1 led to the increase of the average aspect ratio of α-CaSO4·0.5H2O whiskers from 80 to 430, since the selective adsorption of CTAB on the negatively-charged side facets of the whiskers inhibited the growth of the whiskers along the direction normal to the lateral facets. The further increase of CTAB concentration above the critical micelle concentration (abbreviated as CMC showed little effect on the morphology of α-CaSO4·0.5H2O whiskers, considering that CTAB tended to form micelles instead of being adsorbed on the whisker surfaces. Similar phenomena were observed in other ATABs (n = 10, 12, 14, 18.

  16. 3-D Numerical Simulation and Analysis of Complex Fiber Geometry RaFC Materials with High Volume Fraction and High Aspect Ratio based on ABAQUS PYTHON

    Science.gov (United States)

    Jin, BoCheng

    2011-12-01

    Organic and inorganic fiber reinforced composites with innumerable fiber orientation distributions and fiber geometries are abundantly available in several natural and synthetic structures. Inorganic glass fiber composites have been introduced to numerous applications due to their economical fabrication and tailored structural properties. Numerical characterization of such composite material systems is necessitated due to their intrinsic statistical nature, which renders extensive experimentation prohibitively time consuming and costly. To predict various mechanical behavior and characterizations of Uni-Directional Fiber Composites (UDFC) and Random Fiber Composites (RaFC), we numerically developed Representative Volume Elements (RVE) with high accuracy and efficiency and with complex fiber geometric representations encountered in uni-directional and random fiber networks. In this thesis, the numerical simulations of unidirectional RaFC fiber strand RVE models (VF>70%) are first presented by programming in ABAQUS PYTHON. Secondly, when the cross sectional aspect ratios (AR) of the second phase fiber inclusions are not necessarily one, various types of RVE models with different cross sectional shape fibers are simulated and discussed. A modified random sequential absorption algorithm is applied to enhance the volume fraction number (VF) of the RVE, which the mechanical properties represents the composite material. Thirdly, based on a Spatial Segment Shortest Distance (SSSD) algorithm, a 3-Dimentional RaFC material RVE model is simulated in ABAQUS PYTHON with randomly oriented and distributed straight fibers of high fiber aspect ratio (AR=100:1) and volume fraction (VF=31.8%). Fourthly, the piecewise multi-segments fiber geometry is obtained in MATLAB environment by a modified SSSD algorithm. Finally, numerical methods including the polynomial curve fitting and piecewise quadratic and cubic B-spline interpolation are applied to optimize the RaFC fiber geometries. Based on the multi-segments fiber geometries and aforementioned techniques, smooth curved fiber geometries depicted by cubic B-spline polynomial interpolation are obtained and different types of RaFC RVEs with high fiber filament aspect ratio (AR>3000:1) and high RVE volume fraction (VF>40.29%) are simulated by ABAQUS scripting language PYTHON programming.

  17. Transonic steady- and unsteady-pressure measurements on a high-aspect-ratio supercritical-wing model with oscillating control surfaces

    Science.gov (United States)

    Sandford, M. C.; Ricketts, R. H.; Cazier, F. W., Jr.

    1980-01-01

    A supercritical wing with an aspect ratio of 10.76 and with two trailing-edge oscillating control surfaces is described. The semispan wing is instrumented with 252 static orifices and 164 in situ dynamic-pressure gages for studying the effects of control-surface position and motion on steady- and unsteady-pressures at transonic speeds. Results from initial tests conducted in the Langley Transonic Dynamics Tunnel at two Reynolds numbers are presented in tabular form.

  18. Technological and material related challenges for large area, high aspect-ratio, near teradot/inch2 areal density and three-dimensional structuring of polyaniline.

    Science.gov (United States)

    Jedrasik, Piotr; Vlad, Alexandru; Södervall, Ulf

    2011-10-01

    In this manuscript we report on a newly developed technology for the nanoscale processing of the conducting polyaniline (PANI) with an unprecedented areal patterning order and density control exceeding 0.25 teradot/inch2. High resolution electron beam lithography was used to generate ordered 2D and 3D templates. A novel type of resist and dose-modulated 3D-electron beam lithography (RDM-3D-EBL), extensively exploiting the intrinsic properties of resist-electron beam interaction is detailed. Surface initiated and template confined aniline polymerization, through catalytic activity of metallic platinum, was then exploited to provide a genuine method for controlled nanoscale processing of polyaniline, a prototypical conjugated polymer that definitively settled the concept of synthetic metals. Using nanoscale polymerization reactors, ultimate resolution patterning and processing control of single polyaniline nanostructures was feasible. Aspects of the nanoscale polyaniline growth mechanism are discussed and the highly controllable, sub-picogram scale fabrication is emphasized. Near teradot/inch2 pattern transfer technology, complex 3D structuring and physico-chemical functionalization of polyaniline can be subsequently harnessed to build a large variety of architectures with potential for emerging optoelectronic technologies. The method is scalable, can be applied on virtually any type of flexible or rigid substrates and provides a generic approach for nanopatterning surfaces with functional polymers. Technological and material related fabrication challenges are detailed and discussed.

  19. Fractionation and Characterization of High Aspect Ratio Gold Nanorods Using Asymmetric-Flow Field Flow Fractionation and Single Particle Inductively Coupled Plasma Mass Spectrometry

    Directory of Open Access Journals (Sweden)

    Thao M. Nguyen

    2015-07-01

    Full Text Available Gold nanorods (GNRs are of particular interest for biomedical applications due to their unique size-dependent longitudinal surface plasmon resonance band in the visible to near-infrared. Purified GNRs are essential for the advancement of technologies based on these materials. Used in concert, asymmetric-flow field flow fractionation (A4F and single particle inductively coupled mass spectrometry (spICP-MS provide unique advantages for fractionating and analyzing the typically complex mixtures produced by common synthetic procedures. A4F fractions collected at specific elution times were analyzed off-line by spICP-MS. The individual particle masses were obtained by conversion of the ICP-MS pulse intensity for each detected particle event, using a defined calibration procedure. Size distributions were then derived by transforming particle mass to length assuming a fixed diameter. The resulting particle lengths correlated closely with ex situ transmission electron microscopy. In contrast to our previously reported observations on the fractionation of low-aspect ratio (AR GNRs (AR < 4, under optimal A4F separation conditions the results for high-AR GNRs of fixed diameter (≈20 nm suggest normal, rather than steric, mode elution (i.e., shorter rods with lower AR generally elute first. The relatively narrow populations in late eluting fractions suggest the method can be used to collect and analyze specific length fractions; it is feasible that A4F could be appropriately modified for industrial scale purification of GNRs.

  20. Catalytic Synthesis of Substrate-Free, Aligned and Tailored High Aspect Ratio Multiwall Carbon Nanotubes in an Ultrasonic Atomization Head CVD Reactor

    OpenAIRE

    Fahad Ali Rabbani; Zuhair Omar Malaibari; Muataz Ali Atieh; Ammar Jamie

    2016-01-01

    Chemical vapor deposition (CVD) method has proven its benchmark, over other methods, for the production of different types of carbon nanotubes (CNT) on commercial and lab scale. In this study, an injection vertical CVD reactor fitted with an ultrasonic atomization head was used in a pilot-plant scale (height 274 cm, radius 25 cm) for semicontinuous production of multiwall carbon nanotubes (MWCNTs). p-Xylene was used as a hydrocarbon precursor in which ferrocene was dissolved and provided the ...

  1. Fractionation and Characterization of High Aspect Ratio Gold Nanorods Using Asymmetric-Flow Field Flow Fractionation and Single Particle Inductively Coupled Plasma Mass Spectrometry

    OpenAIRE

    Nguyen, Thao M; Jingyu Liu; Vincent A. Hackley

    2015-01-01

    Gold nanorods (GNRs) are of particular interest for biomedical applications due to their unique size-dependent longitudinal surface plasmon resonance band in the visible to near-infrared. Purified GNRs are essential for the advancement of technologies based on these materials. Used in concert, asymmetric-flow field flow fractionation (A4F) and single particle inductively coupled mass spectrometry (spICP-MS) provide unique advantages for fractionating and analyzing the typically complex mixtur...

  2. Porous, one-dimensional and high aspect ratio nanofibric network of cobalt manganese oxide as a high performance material for aqueous and solid-state supercapacitor (2 V)

    Science.gov (United States)

    Bhagwan, Jai; Sivasankaran, V.; Yadav, K. L.; Sharma, Yogesh

    2016-09-01

    Porous nanofibric network of spinel CoMn2O4 (CMO) are fabricated by facile electrospinning process and characterized by XRD, BET, TGA, FTIR, FESEM, TEM, XPS techniques. CMO nanofibers are employed as supercapacitor electrode for first time which exhibits high specific capacitance (Cs) of 320(±5) F g-1 and 270(±5) F g-1 at 1 A g-1 and 5 A g-1, respectively in 1 M H2SO4. CMO nanofibers exhibit excellent cyclability (till 10,000 cycles @ 5 A g-1). To examine practical performance, solid-state symmetric supercapacitor (SSSC) is also fabricated using PVA-H2SO4 as gel electrolyte. The SSSC evinces high energy density of 75 W h kg-1 (comparable to Pb-acid and Ni-MH battery) along with high power density of 2 kW kg-1. Furthermore, a red colored LED (1.8 V @ current 20 mA) was lit for 5 min using single SSSC device supporting its output voltage of 2 V. This high performance of CMO in both aqueous and SSSC is attributed to one dimensional nanofibers consisting of voids/gaps with minimum inter-particle resistance that facilitates smoother transportation of electrons/ions. These voids/gaps in CMO (structural as well as morphological) act as intercalation/de-intercalation sites for extra storage performance, and also works as buffering space to accommodate stress/strain produced while long term cyclings.

  3. Study of Ni Metallization in Macroporous Si Using Wet Chemistry for Radio Frequency Cross-Talk Isolation in Mixed Signal Integrated Circuits

    Directory of Open Access Journals (Sweden)

    King-Ning Tu

    2011-05-01

    Full Text Available A highly conductive moat or Faraday cage of through-the-wafer thickness in Si substrate was proposed to be effective in shielding electromagnetic interference thereby reducing radio frequency (RF cross-talk in high performance mixed signal integrated circuits. Such a structure was realized by metallization of selected ultra-high-aspect-ratio macroporous regions that were electrochemically etched in p− Si substrates. The metallization process was conducted by means of wet chemistry in an alkaline aqueous solution containing Ni2+ without reducing agent. It is found that at elevated temperature during immersion, Ni2+ was rapidly reduced and deposited into macroporous Si and a conformal metallization of the macropore sidewalls was obtained in a way that the entire porous Si framework was converted to Ni. A conductive moat was as a result incorporated into p− Si substrate. The experimentally measured reduction of crosstalk in this structure is 5~18 dB at frequencies up to 35 GHz.

  4. Realization of optical multimode TSV waveguides for Si-Interposer in 3D-chip-stacks

    Science.gov (United States)

    Killge, S.; Charania, S.; Richter, K.; Neumann, N.; Al-Husseini, Z.; Plettemeier, D.; Bartha, J. W.

    2017-05-01

    Optical connectivity has the potential to outperform copper-based TSVs in terms of bandwidth at the cost of more complexity due to the required electro-optical and opto-electrical conversion. The continuously increasing demand for higher bandwidth pushes the breakeven point for a profitable operation to shorter distances. To integrate an optical communication network in a 3D-chip-stack optical through-silicon vertical VIAs (TSV) are required. While the necessary effort for the electrical/optical and vice versa conversion makes it hard to envision an on-chip optical interconnect, a chip-to-chip optical link appears practicable. In general, the interposer offers the potential advantage to realize electro-optical transceivers on affordable expense by specific, but not necessarily CMOS technology. We investigated the realization and characterization of optical interconnects as a polymer based waveguide in high aspect ratio (HAR) TSVs proved on waferlevel. To guide the optical field inside a TSV as optical-waveguide or fiber, its core has to have a higher refractive index than the surrounding material. Comparing different material / technology options it turned out that thermal grown silicon dioxide (SiO2) is a perfect candidate for the cladding (nSiO2 = 1.4525 at 850 nm). In combination with SiO2 as the adjacent polymer layer, the negative resist SU-8 is very well suited as waveguide material (nSU-8 = 1.56) for the core. Here, we present the fabrication of an optical polymer based multimode waveguide in TSVs proved on waferlevel using SU-8 as core and SiO2 as cladding. The process resulted in a defect-free filling of waveguide TSVs with SU-8 core and SiO2 cladding up to aspect ratio (AR) 20:1 and losses less than 3 dB.

  5. Deep reactive ion etching of 4H-SiC via cyclic SF6/O2 segments

    Science.gov (United States)

    Luna, Lunet E.; Tadjer, Marko J.; Anderson, Travis J.; Imhoff, Eugene A.; Hobart, Karl D.; Kub, Fritz J.

    2017-10-01

    Cycles of inductively coupled SF6/O2 plasma with low (9%) and high (90%) oxygen content etch segments are used to produce up to 46.6 µm-deep trenches with 5.5 µm-wide openings in single-crystalline 4H-SiC substrates. The low oxygen content segment serves to etch deep in SiC whereas the high oxygen content segment serves to etch SiC at a slower rate, targeting carbon-rich residues on the surface as the combination of carbon-rich and fluorinated residues impact sidewall profile. The cycles work in concert to etch past 30 µm at an etch rate of ~0.26 µm min-1 near room temperature, while maintaining close to vertical sidewalls, high aspect ratio, and high mask selectivity. In addition, power ramps during the low oxygen content segment is used to produce a 1:1 ratio of mask opening to trench bottom width. The effect of process parameters such as cycle time and backside substrate cooling on etch depth and micromasking of the electroplated nickel etch mask are investigated.

  6. Enhancing the oxidation resistance of graphite by applying an SiC coat with crack healing at an elevated temperature

    Science.gov (United States)

    Park, Jae-Won; Kim, Eung-Seon; Kim, Jae-Un; Kim, Yootaek; Windes, William E.

    2016-08-01

    The potential of reducing the oxidation of the supporting graphite components during normal and/or accident conditions in the Very High Temperature Reactor (VHTR) design has been studied. In this work efforts have been made to slow the oxidation process of the graphite with a thin SiC coating (∼ 10 μm). Upon heating at ≥ 1173 K in air, the spallations and cracks were formed in the dense columnar structured SiC coating layer grown on the graphite with a functionally gradient electron beam physical vapor deposition (EB-PVD. In accordance with the formations of these defects, the sample was vigorously oxidized, leaving only the SiC coating layer. Then, efforts were made to heal the surface defects using additional EB-PVD with ion beam bombardment and chemical vapor deposition (CVD). The EB-PVD did not effectively heal the cracks. But, the CVD was more appropriate for crack healing, likely due to its excellent crack line filling capability with a high density and high aspect ratio. It took ∼ 34 min for the 20% weight loss of the CVD crack healed sample in the oxidation test with annealing at 1173 K, while it took ∼ 8 min for the EB-PVD coated sample, which means it took ∼4 times longer at 1173 K for the same weight reduction in this experimental set-up.

  7. Anisotropic relaxation behavior of InGaAs/GaAs selectively grown in narrow trenches on (001) Si substrates

    Science.gov (United States)

    Guo, W.; Mols, Y.; Belz, J.; Beyer, A.; Volz, K.; Schulze, A.; Langer, R.; Kunert, B.

    2017-07-01

    Selective area growth of InGaAs inside highly confined trenches on a pre-patterned (001) Si substrate has the potential of achieving a high III-V crystal quality due to high aspect ratio trapping for improved device functionalities in Si microelectronics. If the trench width is in the range of the hetero-layer thickness, the relaxation mechanism of the mismatched III-V layer is no longer isotropic, which has a strong impact on the device fabrication and performance if not controlled well. The hetero-epitaxial nucleation of InxGa1-xAs on Si can be simplified by using a binary nucleation buffer such as GaAs. A pronounced anisotropy in strain release was observed for the growth of InxGa1-xAs on a fully relaxed GaAs buffer with a (001) surface inside 20 and 100 nm wide trenches, exploring the full composition range from GaAs to InAs. Perpendicular to the trench orientation (direction of high confinement), the strain release in InxGa1-xAs is very efficiently caused by elastic relaxation without defect formation, although a small compressive force is still induced by the trench side walls. In contrast, the strain release along the trenches is governed by plastic relaxation once the vertical film thickness has clearly exceeded the critical layer thickness. On the other hand, the monolithic deposition of mismatched InxGa1-xAs directly into a V-shaped trench bottom with {111} Si planes leads instantly to a pronounced nucleation of misfit dislocations along the {111} Si/III-V interfaces. In this case, elastic relaxation no longer plays a role as the strain release is ensured by plastic relaxation in both directions. Hence, using a ternary seed layer facilitates the integration of InxGa1-xAs covering the full composition range.

  8. Si/SiGe MMIC's

    Science.gov (United States)

    Luy, Johann-Friedrich; Strohm, Karl M.; Sasse, Hans-Eckard; Schueppen, Andreas; Buechler, Josef; Wollitzer, Michael; Gruhle, Andreas; Schaeffler, Friedrich; Guettich, Ulrich; Klaassen, Andreas

    1995-04-01

    Silicon-based millimeter-wave integrated circuits (SIMMWIC's) can provide new solutions for near range sensor and communication applications in the frequency range above 50 GHz. This paper gives a survey on the state-of-the-art performance of this technology and on first applications. The key devices are IMPATT diodes for mm-wave power generation and detection in the self-oscillating mixer mode, p-i-n diodes for use in switches and phase shifters, and Schottky diodes in detector and mixer circuits. The silicon/silicon germanium heterobipolar transistor (SiGe HBT) with f(sub max) values of more than 90 GHz is now used for low-noise oscillators at Ka-band frequencies. First system applications are discussed.

  9. 与Si工艺兼容的Si/SiGe/Si HBT研究%The Study of Si/SiGe/Si HBT and Its Compatibility with Si Process

    Institute of Scientific and Technical Information of China (English)

    廖小平

    2001-01-01

    我们对Si/SiGe/Si HBT及其Si兼容工艺进行了研究,在研究了一些关键的单项工艺的基础上,提出了五个高速Si/SiGe/Si HBT结构和一个低噪声Si/SiGe/Si HBT结构,并已研制成功台面结构Si/SiGe/Si HBT和低噪声Si/SiGe/Si HBT,为进一步高指标的Si/SiGe/Si HBT的研究建立了基础.

  10. Interface structure between epitaxial NiSi2 and Si

    Institute of Scientific and Technical Information of China (English)

    Wei-Long Liu; Wen-Jauh Chen; Ting-Kan Tsai; Hsun-Heng Tsai; Shu-Huei Hsieh

    2006-01-01

    The interface structure between the Si and NiSi2 epitaxially grown on the ((-1)12) Si substrate was studied using high resolution transmission electron microscopy and computer image simulation. The results showed that the interface between Si and NiSi2 epitaxially grown on the ((-1)12) Si substrate has six different types: type A NiSi2 ((-1)11 )/( (-1)11 ) Si, type A NiSi2 (001)/(001) Si, type B NiSi2 (1(-1)(-1))/(1(-1)1) Si, type B NiSi2 ((-1)12)/(1(-1)2) Si, type B NiSi2 (2(-2)1)/(001) Si, and type B NiSi2 (1(-1)(4))/( 1(-1)0 ) Si. And there are one or more different atomic structures for one type of interface.

  11. 射频 Si/SiGe/Si HBT的研究%Studies on RF Si/SiGe/Si HBT

    Institute of Scientific and Technical Information of China (English)

    廖小平; 殷刚毅

    2003-01-01

    Si/SiGe/Si HBT与Si工艺兼容的研究基础上,对射频Si/SiGe/Si HBT的射频特性和制备工艺进行了研究,分析了与器件结构有关的关键参数寄生电容和寄生电阻与Si/SiGe/Si HBT的特征频率fT和最高振荡频率fmax的关系,成功地制备了fT为2.5 GHz、fmax为2.3 GHz的射频Si/SiGe/Si HBT,为具有更好的射频性能的Si/SiGe/Si HBT的研究建立了基础.

  12. Privacy and Yin Si

    Institute of Scientific and Technical Information of China (English)

    胡迪

    2007-01-01

    <正>“Privacy” is translated as yin si in Chinese.Traditionally,in the Chinese mind,yin si is associated with something that is closed or unfair.If someone is said to have yin si,meddlers(好事者) will be attracted to pry(打探) into his or her affairs.So people always state that they don’t have yin si.

  13. Electroluminescence of Si Nanocrystal-Doped SiO2

    Institute of Scientific and Technical Information of China (English)

    CHEN Dan; XIE Zhi-Qiang; WU Qian; ZHAO You-Yuan; LU Ming

    2007-01-01

    @@ We perform a comparative study on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystaldoped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.

  14. Si/SiO2和Si/SiNx/SiO2超晶格的能带结构%Band structure of Si/SiO2 and Si/SiNx/SiO2 superlattices

    Institute of Scientific and Technical Information of China (English)

    魏屹; 董成军; 徐明

    2010-01-01

    利用Kronig-Penney模型从理论上计算了Si/SiO2和Si/Si/SiNx/SiO2多层膜结构中量子阱的能带结构,进一步分析了各亚层薄膜厚度对能带结构和有效质量的影响.结果发现,适当减少亚层的厚度都能使得纳米Si薄膜的带隙发生明显宽化.在Si/SiO2超晶格中,Si量子阱层带隙能量随着Si层厚度的变化符合EPLL(eV)=1.6+0.7/d2关系,与我们的计算结果十分吻合.在Si/SiNdSiO2超晶格系统中,可以通过控制各亚层厚度,尤其是Si和SiNx层厚度,均能够有效地控制发光.

  15. Highly ordered Al-doped ZnO nano-pillar and tube structures as hyperbolic metamaterials for mid-infrared plasmonics

    DEFF Research Database (Denmark)

    Shkondin, Evgeniy; Takayama, Osamu; Panah, Mohammad Esmail Aryaee

    Fabrication of large area metamaterial structures in a reproducible manner is a tremendous challenge. Here, we realize the fabrication of plasmonic metamaterials for the mid-infrared wavelength region composed of Al-doped ZnO (AZO) pillars by a combination of atomic layer deposition and reactive...

  16. Suppression of cell-spreading and phagocytic activity on nano-pillared surface: in vitro experiment using hemocytes of the colonial ascidian Botryllus schlosseri

    Directory of Open Access Journals (Sweden)

    L Ballarin

    2015-02-01

    Full Text Available Nano-scale nipple array on the body surface has been described from various invertebrates including endoparasitic and mesoparasitic copepods, but the functions of the nipple array is not well understood. Using the hydrophilized nanopillar sheets made of polystyrene as a mimetic material of the nipple arrays on the parasites’ body surface, we assayed the cell spreading and phagocytosis of the hemocytes of the colonial ascidian Botryllus schlosseri. On the pillared surface, the number of spreading amebocytes and the number of phagocytizing hemocytes per unit area were always smaller than those on the flat surface (Mann-Whitney test, p < 0.05 - 0.001, probably because the effective area for the cell attachment on the pillared surface is much smaller than the area on the flat sheet. The present results supports the idea that the nipple array on the parasites' body surface reduces the innate immune reaction from the host hemocytes.

  17. Aperiodic SiSn/Si multilayers for thermoelectric applications

    Science.gov (United States)

    Tonkikh, A. A.; Zakharov, N. D.; Eisenschmidt, C.; Leipner, H. S.; Werner, P.

    2014-04-01

    We report on novel defect-free SiSn/Si heterostructures grown pseudomorphically on Si(001) substrates using temperature-modulated molecular beam epitaxy. This approach results in a sustainable epitaxial growth for SiSn/Si multilayers. Transmission electron microscopy and electron diffraction manifest that SiSn layers possess a diamond lattice structure. X-ray diffraction reveals up to 9.5 at% Sn in the crystal lattice of SiSn layers.

  18. Prose Writer Si Yu

    Institute of Scientific and Technical Information of China (English)

    1996-01-01

    SI Yu, pen name of Zhan Shaojuan, is well known through her prose works. During the recent more than ten years, Chinese prose writing has developed rapidly, from its previous level to the present flourishing conditions. Si Yu is a distinguished woman writer, whose creative prose alternately displays either

  19. 大展弦比机翼非线性颤振剪裁设计新方法%A NEW METHOD ON FLUTTER TAILORING TECHNIQUES OF HIGH-ASPECT-RATIO WINGS

    Institute of Scientific and Technical Information of China (English)

    任智毅; 金海波; 丁运亮

    2014-01-01

    A method was presented to analyze the nonlinear flutter.Based on this method,the flutter character-istics of the high aspect wing were illustrated.The numerical results show that the flutter speed is decreased when the first horizontal bending mode involved.Secondly,this study discussed how the main direction of the compos-ite influenced the character of the nonlinear vibration and flutter,and established the method of the flutter clip-ping to the high aspect wing.And the result shows that the stiffness of structure can be changed by changing the main direction of the composite.It mainly changes the horizontal bending mode,makes the main direction tend to the trailing edge,and then makes the section line move to the leading edge.Further analyzing the nonlinear flut-ter reveals that it is the changing of the horizontal bending mode that causes the flutter speed change obviously. And by the section line of this mode moves ahead,the flutter speed will become larger.In the study,two exam-ples were illustrated to validate its truthiness.%针对大展弦比机翼水平弯曲模态参与耦合颤振问题,首先用考虑几何非线性的颤振分析方法研究了某大展弦比机翼的颤振特性,结果表明水平一弯模态参与耦合降低了机翼传统模式的线性颤振速度;然后研究了复合材料的铺层主刚度方向角对机翼非线性振动特性和颤振特性的影响规律,提出了大展弦比机翼非线性颤振剪裁设计的新方法。结果表明主刚度方向角的变化主要引起了水平一弯模态振型的改变,一般表现为主刚度方向角从机翼后梁向后缘偏转,该阶模态的相对扭转振型节线位置向前缘移动;反之,该节线位置后移。进一步非线性颤振分析,发现水平一弯模态振型的变化引起了该阶模态参与耦合颤振速度的明显改变,主要表现为该颤振型的颤振速度随该阶模态的相对扭转振型节线位置前移量的增加而增大。通过两个算例验证了结论的正确性。

  20. Electroluminescence from Si/SiO2 films deposited on p-Si substrates

    Institute of Scientific and Technical Information of China (English)

    马书懿; 萧勇; 陈辉

    2002-01-01

    The structure of Au/Si/SiO2/p-Si has been fabricated using the magnetron sputtering technique. It has a verygood rectifying behaviour. Visible electroluminescence (EL) has been observed from the Au/Si/SiO2/p-Si structureat a forward bias of 5V or larger. A broad band with one peak around 650-660 nm appears in all the EL spectra ofthe structure. The effects of the thickness of the Si layer in the Si/SiO2 films and of the input electrical power on ELspectra are studied systematically.

  1. Influence of Si on Interfacial Combination of SiCp/Al-Mg-Si Composite

    Institute of Scientific and Technical Information of China (English)

    Han Jianmin; Li Ronghua; Li Mingwei; Cui Shihai; Li Weijing; Wang Jinhua

    2004-01-01

    The scanning electron microscopy (SEM) analysis results of Si distribution in the interface between SiC reinforcements and aluminum matrix of a stir casting SiCp/Al-Mg-Si composite were presented. Results show that there is Si precipitation deposit on the interface of the composite and Si connects with SiC reinforcements in one side and connects with aluminum matrix in the other side. Si phase plays as a connecting bridge, which contributes to the interfacial combination of SiCp/Al composite.

  2. Introduction of atomic H into Si3N4/SiO2/Si stacks

    Institute of Scientific and Technical Information of China (English)

    JIN Hao; WEBER K.J.; LI Weitang; BLAKERS A.W.

    2006-01-01

    Atomic H generated by a plasma NH3 source at 400 ℃ was demonstrated to passivate dehydrogenated Si3N4/SiO2/Si stacks effectively by bonding with defectsin the Si3N4 film and at the Si-SiO2 interface. A subsequent anneal in N2 after atomic H reintroduction was demonstrated to further improve passivation of the Si-SiO2 interface. Isothermal and isochronal anneals in N2 were carried out in order to determine the optimized annealing conditions.

  3. Electronic Structure of Si1-xIVx/Si Superlattices on Si(001)

    Institute of Scientific and Technical Information of China (English)

    CHEN Jie; L(U) Tie-Yu; HUANG Mei-Chun

    2007-01-01

    We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xIVx/Si (x = 0.125, 0.25, 0.5,IV=Ge, Sn) superlattices (SLs) grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875 Ge0.125/Si, Si0.75 Ge0.25/Si and Si0.875Sn0.125/Si axe the Γ-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xIVx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.

  4. Photoelectric properties of n-SiC/n-Si heterojunctions

    Directory of Open Access Journals (Sweden)

    Semenov A. V.

    2012-10-01

    Full Text Available Photovoltaic effect in isotype heterotructure formed by nanocrystalline silicon carbide films on single crystal n-Si substrates (n-SiC/n-Si heterojunction was studied. The films were produced by direct ionic deposition method. The model that takes into account the quantum wells and potential barriers caused by band offsets was proposed to explain the current-voltage characteristics and photovoltaic properties of the heterostructure n-SiC/n-Si.

  5. Interfacial reaction of eutectic AuSi solder with Si (100) and Si (111) surfaces

    Science.gov (United States)

    Jang, Jin-Wook; Hayes, Scott; Lin, Jong-Kai; Frear, Darrel R.

    2004-06-01

    The dissolution behavior of Si (100) and (111) dies by eutectic AuSi solder was investigated. On the Si (100) surface, the dissolution primarily occurred by the formation of craters resulting in a rough surface. The dissolution of the Si (111) resulted in a relatively smooth surface. The morphology of the Si (100) surface during a AuSi soldering reaction exhibited more time-dependent behavior and the etching craters on a Si (100) surface grew larger with time whereas Si (111) did not significantly change. This difference was ascribed to the surface energy differences between Si (111) and (100) surfaces that resulted in the two- and three-dimensional dissolution behaviors, respectively. This difference plays an important role in the formation of voids during the AuSi die bonding. The etching craters on Si (100) act as a AuSi solder sink and the regions surrounded by etch pits tend to become voids. For Si (111), flat surfaces were observed in the voided regions. Cross section analysis showed that no solder reaction occurred in the voided region of the Si (111) surface. This suggests the possibility of the formation of a thin inert layer in a potentially voided region prior to assembly. To achieve void-free die bonding, different parameters must be adjusted to the Si (100) and Si (111) surfaces with the AuSi alloy.

  6. Correlation between Light Emissions from Amorphous-Si:H/SiO2 and nc-Si/SiO2 Multilayers

    Institute of Scientific and Technical Information of China (English)

    MA Zhong-Yuan; HUANG Xin-Fan; CHEN Kun-Ji; FENG Duan; HAN Pei-Gao; LI Wei; CHEN De-Yuan; WEI De-Yuan; QIAN Bo; LI Wei; XU Jun; XU Ling

    2007-01-01

    We investigate the properties of light emission from amorphous-Si:H/SiO2 and nc-Si/SiO2 multilayers (MLs). The size dependence of light emission is well exhibited when the a-Si:H sublayer thickness is thinner than 4nm and the interface states are well passivated by hydrogen. For the nc-Si/SiO2 MLs, the oxygen modified interface states and nanocrystalline silicon play a predominant role in the properties of light emission. It is found that the light emission from nc-Si/SiO2 is in agreement with the model of interface state combining with quantum confinement when the size of nc-Si is smaller than 4 nm. The role of hydrogen and oxygen is discussed in detail.

  7. A comparative study of electroluminescence from Ge/SiO2 and Si/SiO2 films

    Institute of Scientific and Technical Information of China (English)

    Ma Shu-Yi; Chen Hui; Xiao Yong; Ma Zi-Jun; Sun Ai-Min

    2004-01-01

    Ge/SiO2 and Si/SiO2 films were deposited using the two-target alternation magnetron sputtering technique. The Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures were fabricated and their electroluminescence (EL) characteristics were comparatively studied. Both Au/Ge/SiO2/p-Si and Au/Si/SiO2/p-Si structures have rectifying property. All the EL spectra from the two types of the structure have peak positions around 650-660 nm. The EL mechanisms of the structures are discussed.

  8. a-Si/c-Si heterojunction solar cells on SiSiC ceramic substrates

    Institute of Scientific and Technical Information of China (English)

    LI Xudong; XU Ying; CHE Xiaoqi

    2006-01-01

    Silicon thin-film solar cells are considered to be one of the most promising cells in the future for their potential advantages, such as low cost, high efficiency, great stability, simple processing, and none-pollution. In this paper, latest progress on poly-crystalline silicon solar cells on ceramic substrates achieved by our group was reported. Rapid thermal chemical vapor deposition (RTCVD) was used to deposited poly-crystalline silicon thin films, and the grains of as-grown film were enlarged by Zone-melting Recrystallization (ZMR). As a great changein cell's structure, traditional diffused pn homojunction was replaced by a-Si/c-Si heterojunction, which lead is to distinct improvement in cell's efficiency.A conversion efficiency of 3.42% has been achieved on 1cm2 a-Si/c-Si heterojunction solar cell ( Isc =16.93 mA, Voc =310.9 mV, FF =06493, AM =1.5 G,24 ℃), while the cell with diffused homojunction only gotan efficiency of 0.6%. It indicates that a-Si emitter formed at low temperature might be more suitable for thin film cell on ceramics.

  9. Features of Mg2Si Layer Growth in Si/Mg2Si Multilayers

    Directory of Open Access Journals (Sweden)

    L.E. Konotopskyi

    2016-06-01

    Full Text Available Features of magnesium siliced layer growth in Si/Mg2Si multilayers in initial state and after thermal annealing were studied by methods of transmission electron microscopy and X-Ray scattering. As-deposited magnesium silicide layers are amorphous with nanocrystal inclusions of metastable h-Mg2Si. Formation of Mg2Si in hexagonal modification occurs under the influence of stress produced by silicon layers. At T = 723 К Mg2Si layers finished crystallizes in hexagonal modification, with some coarsening of grains. That is accompanied with 7.3 % reduction in period of the Si/Mg2Si multilayer.

  10. Transport and electroluminescence mechanism in Au/(Si/SiO2)/P-Si film

    Institute of Scientific and Technical Information of China (English)

    ZHANG Kai-biao; MA Shu-yi; MA Zi-jun; CHEN Hai-xia

    2006-01-01

    The samples of Au/(Si/SiO2)/p-Si structure were fabricated by using the R.F magnetron sputtering technique.Its carrier transport and electroluminescence mechanism were studied from the I-V curves and EL spectra by using the Configuration Coordinate as a theoretical model.The result indicates that there are two defect centers in SiO2 films.The electron in Au and the hole in p-Si went into SiO2 film by the Fowler-Nordheim tunneling model at a high bias voltage and recombined through these defect centers in SiO2 film.

  11. Photoreflectance Spectroscopy for Study of Si/SiGe/Si Heterostructure

    Institute of Scientific and Technical Information of China (English)

    Liu Zhihong; Chen Changchun; Lin Huiwang; Xiong Xiaoyi; Dou Weizhi; Tsien Pei-Hsin

    2004-01-01

    UHVCVD-grown Si/Si1- xGex/Si heterostructure was investigated by Photoreflectance spectroscopy (PR). The principle of PR used in semiconductor film was thoroughly described. According to the E1 transition energy in the Si1- xGex alloy, the Ge content in SiGe film with constant composition can be accurately characterized. In this study, determine the composition uniformity of larger diameter SiGe epiwafer by PR mapping technique was determined. These results show PR is very promising for Si1- xGex epilayer characterization with constant Ge content and can provide film measurements for production-worthy line monitor.

  12. Oxide layer dissolution in Si/SiO{sub x}/Si wafer bonded structures

    Energy Technology Data Exchange (ETDEWEB)

    Pippel, E.; Werner, P.; Goesele, U. [Max-Planck-Institut fuer Mikrostrukturphysik, Halle (Germany); Vdovin, V. [Institute for Chemical Problems of Microelectronics, Moscow (Russian Federation); Institute of Rare Metals Giredmet, Moscow (Russian Federation); Zakharov, N.

    2009-10-15

    The evolution of the interfaces of hydrophilic-bonded Si wafers and the corresponding low-angle twist boundary have been analysed in relation to thermal annealing and their relative crystallographic orientation. Two orientation relationships were investigated: Si<001>/Si<001> and Si<001>/Si<110>, where the interfaces are separated by thin native SiO2 layers. The interfaces were analysed by TEM and STEM/EELS. It is found that the decomposition rate of the intermediate oxide layer and the formation of a Si-Si bonded interface depend very much on the lattice mismatch and on the twist angle. The velocity of the dissolution of the thin oxide layers and the formation of Si-Si bonds at the bonding interface depend on the orientation relations of the corresponding wafers. The processes of interface fusion and the dissolution of oxide layer are discussed. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD

    Institute of Scientific and Technical Information of China (English)

    CHEN Chang-Chun; LIU Zhi-Hong; HUANG Wen-Tao; DOU Wei-Zhi; ZHANG Wei; TSIEN Pei-Hsin; ZHU De-Zhang

    2003-01-01

    Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.

  14. Si/SiGe/Si HBT的直流特性和低频噪声%Si/SiGe/Si HBT's DC Characterization and Its Low-frequency Noise

    Institute of Scientific and Technical Information of China (English)

    廖小平; 张中平

    2003-01-01

    在对Si/SiGe/Si HBT及其Si兼容工艺的研究基础上,研制成功低噪声Si/SiGe/Si HBT,测试和分析了它的直流特性和低频噪声特性,为具有更好的低噪声性能的Si/SiGe/Si HBT的研究建立了基础.

  15. Effect of Si/Si1-yCy/Si Barriers on the Characteristics of Si1-xGex/Si Resonant Tunneling Structures

    Institute of Scientific and Technical Information of China (English)

    HAN Ping; CHENG Xue-Mei; Masao Sakuraba; YoungCheon Jeong; Takashi Matsuura; Junichi Murota

    2000-01-01

    P-type double barrier resonant tunneling diodes (RTD) with the single Si0.6Ge0.4 quantum well and double Si0.6 Ge0.4 spacer have been realized by using an ultra clean low-pressure chemical vapor deposition system. The effect of Si1-yCy layer on the characteristics of the devices was shown by comparing the current-voltage (Ⅰ-Ⅴ) characteristics of RTD's of the barriers of Si layers with that of Si/Si1-yCy/Si structures. The peak voltage was gradually increased and the resonant current decreased obviously with increasing C content in the Si/Si1-yCy/Si barriers. The origin of the phenomena above can be attributed to the C related deep acceptor levels in the Si/Si1-yCy/Si barriers. The possible mechanism for the observed Ⅰ-Ⅴcharacteristics was shown more clearly by increasing C content to 3% and changing the thicknesses of Si and Si1-yCy layers in the Si/Si1-yCy/Si barriers.

  16. Relaxed SiGe-on-insulator fabricated by dry oxidation of sandwiched Si/SiGe/Si structure

    Energy Technology Data Exchange (ETDEWEB)

    Di Zengfeng [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Zhang Miao [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Liu Weili [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Zhu Ming [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China); Lin Chenglu [Research Center of Semiconductor Functional Film Engineering Technology and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050 (China); Chu, Paul K. [Department of Physics and Material Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)]. E-mail: paul.chu@cityu.edu.hk

    2005-12-05

    An improved technique is demonstrated to fabricate silicon-germanium on insulator (SGOI) starting with a sandwiched structure of Si/SiGe/Si. After oxidation of the sandwiched structure and successive annealing, a relaxed SiGe-on-insulator (SGOI) structure is produced. Our results indicate that the added Si cap layer is advantageous in suppressing Ge loss at the initial stage of SiGe oxidation and the subsequent annealing process homogenizes the Ge fraction. Raman measurements reveal that the strain in the SiGe layer is fully relaxed at high oxidation temperature ({approx}1150 deg. C) without generating any threading dislocations and crosshatch patterns, which generally exist in the relaxed SiGe layer on bulk Si substrate.

  17. Endotaxial Si nanolines in Si(001):H

    Science.gov (United States)

    Bianco, F.; Owen, J. H. G.; Köster, S. A.; Mazur, D.; Renner, Ch.; Bowler, D. R.

    2011-07-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect-free endotaxial structure of huge aspect ratio; it can grow micrometer long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunneling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long-sought-after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality.

  18. Strength of submicrometer diameter pillars of metallic glasses investigated with in situ transmission electron microscopy

    NARCIS (Netherlands)

    Chen, C.Q.; Pei, Y.T.; Hosson, J.Th.M. De

    2009-01-01

    We have fabricated micro-/nano-pillars of two metallic glasses (MGs), Cu-based Cu(47)Ti(33)Zr(11)Ni(6)Sn(2)Si(1) and Zr-based Zr(50)Ti(16.5)Cu(15)Ni(18.5), respectively, with pillar tip diameters ranging from similar to 650 to similar to 90 nm. These pillars were mechanically tested in situ in

  19. Si-to-Si wafer bonding using evaporated glass

    DEFF Research Database (Denmark)

    Reus, Roger De; Lindahl, M.

    1997-01-01

    Anodic bonding of Si to Si four inch wafers using evaporated glass was performed in air at temperatures ranging from 300°C to 450°C. Although annealing of Si/glass structures around 340°C for 15 minutes eliminates stress, the bonded wafer pairs exhibit compressive stress. Pull testing revealed...

  20. Annealing Behavior of Si1-xGex/Si Heterostructures

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    The behavior of Si1-xGex/Si heterostructures under different annealing conditions has been studied. It is found that while RTA treatment diminishes the point defects, it introduces the misfit dislocations into Si1-xGex layers at same time. Higher annealing temperature will result in the propagation of misfit dislocations and then the total destruction of the crystal quality.

  1. Si nanoparticle interfaces in Si/SiO solar cell materials

    DEFF Research Database (Denmark)

    Kilpeläinen, S.; Kujala, J.; Tuomisto, F.

    2013-01-01

    Novel solar cell materials consisting of Si nanoparticles embedded in SiO2 layers have been studied using positron annihilation spectroscopy in Doppler broadening mode and photoluminescence. Two positron-trapping interface states are observed after high temperature annealing at 1100 °C. One...... of the states is attributed to the (SiO2/Si bulk) interface and the other to the interface between the Si nanoparticles and SiO2. A small reduction in positron trapping into these states is observed after annealing the samples in N2 atmosphere with 5% H2. Enhanced photoluminescence is also observed from...

  2. Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures

    Institute of Scientific and Technical Information of China (English)

    WANG Xiang; HUANG Jian; ZHANG Xian-Gao; DING Hong-Lin; YU Lin-Wei; HUANG Xin-Fan; LI Wei; XU Jun; CHEN Kun-Ji

    2008-01-01

    @@ The a-SiNx/nanocrystalline silicon (nc-Si)/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition (PECVD) system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm,respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures.Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage (C- V) hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample.

  3. Helimagnetic order in bulk MnSi and CoSi/MnSi superlattices

    Science.gov (United States)

    Loh, G. C.; Khoo, K. H.; Gan, C. K.

    2017-01-01

    Skyrmions are nanoscopic whirls of spins that reside in chiral magnets. It is only fairly recent that a plethora of applications for these quasiparticles emerges, especially in data storage. On the other hand, spin spirals are the periodic analogs of skyrmions, and are equally imperative in the course of exploration to enhance our understanding of helimagnetism. In this study, a new infrastructure based on the B20 compound, MnSi is propounded as a hosting material for spin spirals; alternating thin layers of CoSi and MnSi in the superlattice form provides a facile way of varying the properties of the spin spirals across a continuum. Using first-principles calculations based on full-potential linearized augmented plane-wave (FLAPW)-based density functional theory (DFT), the spin order of bulk MnSi, MnSi film, and the CoSi/MnSi superlattice is investigated. Spin dispersion plots as a function of propagation vectors show that the spiral size changes in the presence of CoSi - we find that the size of the spiral is reduced in the superlattice with thin CoSi layers (CoSi:MnSi=1:1 thickness ratio), whilst at a larger CoSi:MnSi=2:1 thickness ratio, the material behaves as a ferromagnet. In a similar fashion, the spin moment and orbital occupancy depend significantly on the thickness of the CoSi layers. However, the exchange interaction between Mn atoms appears to be generally impervious to the presence of CoSi. Succinctly, the CoSi/MnSi superlattice could be an excellent functional material in data storage applications.

  4. Photoluminescence from SiO sub 2 /Si/SiO sub 2 structures

    CERN Document Server

    Photopoulos, P

    2003-01-01

    Si layers were developed on pre-oxidized Si wafers by decomposition of silane in a low pressure chemical vapour deposition reactor. By keeping the deposition time constant (2 min) three sets of samples were fabricated at deposition temperatures equal to 580, 610 and 625 deg C. The deposited Si layers were thinned by high temperature dry oxidation thus forming SiO sub 2 /Si/SiO sub 2 structures. Room temperature photoluminescence (PL) measurements showed that for those samples in which the thickness of the remaining Si layer was greater than approx 6 nm, the spectra exhibited a peak at approx 650 nm. Prolonged oxidations led to the formation of SiO sub 2 /nanocrystalline-Si/SiO sub 2 structures in which the thickness of the remaining nanocrystalline Si (nc-Si) layer was smaller than 3 nm. The PL spectra obtained from these structures were at least ten times stronger compared to the previous ones. The PL peak wavelength exhibited a weak dependence on the nc-Si layer thickness shifting from 800 to 720 nm for nc-...

  5. Strained Si/SiGe MOS transistor model

    Directory of Open Access Journals (Sweden)

    Tatjana Pešić-Brđanin

    2009-06-01

    Full Text Available In this paper we describe a new model of surfacechannel strained-Si/SiGe MOSFET based on the extension of non-quasi-static (NQS circuit model previously derived for bulk-Si devices. Basic equations of the NQS model have been modified to account for the new physical parameters of strained-Si and relaxed-SiGe layers. From the comparisons with measurements, it is shown that a modified NQS MOS including steady-state self heating can accurately predict DC characteristics of Strained Silicon MOSFETs.

  6. Quantum devices using SiGe/Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Karunasiri, R.P.G.; Wang, K.L. (Univ. of California, Los Angeles (United States))

    Strained-layer Si{sub 1-x}Ge{sub x}/Si heterostructures have created a great deal of interest due to the potential of integration with the conventional silicon very large scale integrated technology. With the current advances in silicon molecular beam epitaxy (Si-MBE) and other low-temperature epitaxial techniques, many Si{sub 1-x}Ge{sub x}/Si heterojunction devices have been realized. For example, among those realized are avalanche photodiodes, modulation-doped field-effect transistors, heterojunction bipolar transistors, and more recently, resonant tunneling structures, hot-carrier transistors, and quantum well metal-oxide-semiconductor field-effect transistors. In this paper several quantum size effects in strained Si{sub 1-x}Ge{sub x} layers and their potential in device applications will be reviewed. Among those to be discussed are resonant tunneling, miniband transport, and intersubband absorption in Si{sub 1-x}Ge{sub x}/Si superlattice structures, optical properties of monolayer Si{sub m}Ge{sub n} superlattices, and observation of large Stark effect associated with interband transition between quantized states in Si{sub 1-x}Ge{sub x}/Si quantum well structures.

  7. Highly sensitive NIR PtSi/Si-nanostructure detectors

    Science.gov (United States)

    Li, Hua-gao; Guo, Pei; Yuan, An-bo; Long, Fei; Li, Rui-zhi; Li, Ping; Li, Yi

    2016-10-01

    We report a high external quantum efficiency (EQE) photodiode detector with PtSi/Si-nanostructures. Black silicon nanostructures were fabricated by metal-assist chemical etching (MCE), a 2 nm Pt layer was subsequently deposited on black silicon surface by DC magnetron sputtering system, and PtSi/Si-nanostructures were formed in vacuum annealing at 450 oC for 5 min. As the PtSi/Si-nanostructures presented a spiky shape, the absorption of incident light was remarkably enhanced for the repeat reflection and absorption. The breakdown voltage, dark current, threshold voltage and responsivity of the device were investigated to evaluate the performance of the PtSi/Si-nanostructures detector. The threshold voltage and dark currents of the PtSi/Si-nanostructure photodiode tends to be slightly higher than those of the standard diodes. The breakdown voltage remarkably was reduced because of existing avalanche breakdown in PtSi/Si-nanostructures. However, the photodiodes had high response at room temperature in near infrared region. At -5 V reverse bias voltage, the responsivity was 0.72 A/W in 1064 nm wavelength, and the EQE was 83.9%. By increasing the reverse bias voltage, the responsivity increased. At -60 V reverse bias voltage, the responsivity was 3.5 A/W, and the EQE was 407.5%, which means the quantum efficiency of PtSi/Si-nanostructure photodiodes was about 10 times higher than that of a standard diode. Future research includes how to apply this technology to enhance the NIR sensitivity of image sensors, such as Charge Coupled Devices (CCD).

  8. SiC-Si interfacial thermal and mechanical properties of reaction bonded SiC/Si ceramic composites

    Science.gov (United States)

    Hsu, Chun-Yen; Deng, Fei; Karandikar, Prashant; Ni, Chaoying

    Reaction bonded SiC/Si (RBSC) ceramic composites are broadly utilized in military, semiconductor and aerospace industries. RBSC affords advanced specific stiffness, hardness and thermal. Interface is a key region that has to be considered when working with any composites. Both thermal and mechanical behaviors of the RBSC are highly dependent on the SiC-Si interface. The SiC-Si interface had been found to act as a thermal barrier in restricting heat transferring at room temperature and to govern the energy absorption ability of the RBSC. However, up to present, the role of the SiC-Si interface to transport heat at higher temperatures and the interfacial properties in the nanoscale have not been established. This study focuses on these critically important subjects to explore scientific phenomena and underlying mechanisms. The RBSC thermal conductivity with volume percentages of SiC at 80 and 90 vol% was measured up to 1,200 °C, and was found to decrease for both samples with increasing environmental temperature. The RBSC with 90 vol% SiC has a higher thermal conductivity than that of the 80 vol%; however, is still significantly lower than that of the SiC. The interfacial thermal barrier effect was found to decrease at higher temperatures close 1200 °C. A custom-made in-situ tensile testing device which can be accommodated inside a ZEISS Auriga 60 FIB/SEM has been setup successfully. The SiC-Si interfacial bonding strength was measured at 98 MPa. The observation and analysis of crack propagation along the SiC-Si interface was achieved with in-situ TEM.

  9. Radiation-induced plasmons in Si-SiO2

    Institute of Scientific and Technical Information of China (English)

    1999-01-01

    The first level plasmons of Si in the pure Si state (corresponding to bonding energy (BE) of 116.95 eV) and in the SiO2 state (corresponding to BE of 122.0 eV) of Si-SiO2 prepared by irradiation hard and soft processing were studied with XPS before and after 60Co radiation.The experimental results indicate thatthere was an interface consisting of the two plasmons,this interface was extended by 60Co radiation, the fractions of the plasmon for Si in the Si-SiO2 werechanged with the variation of radiation dosage,the difference of the change in fraction of plasmonsfor the two kinds of samples was that the soft variedfaster than hard, the change of concentrations inplasmons for both hard and soft Si-SiO2 irradiatedin positive bias field were greater than that in bias-free field.The experimental results are explained from the view point of energy absorbed in form of quantization.

  10. Comparison of thermoelectric properties of nanostructured Mg2Si, FeSi2, SiGe, and nanocomposites of SiGe–Mg2Si, SiGe–FeSi2

    Directory of Open Access Journals (Sweden)

    Amin Nozariasbmarz

    2016-10-01

    Full Text Available Thermoelectric properties of nanostructured FeSi2, Mg2Si, and SiGe are compared with their nanocomposites of SiGe–Mg2Si and SiGe–FeSi2. It was found that the addition of silicide nanoinclusions to SiGe alloy maintained or increased the power factor while further reduced the thermal conductivity compared to the nanostructured single-phase SiGe alloy. This resulted in ZT enhancement of Si0.88Ge0.12–FeSi2 by ∼30% over the broad temperature range of 500-950 °C compared to the conventional Si0.80Ge0.20 alloy. The Si0.88Ge0.12–Mg2Si nanocomposite showed constantly increasing ZT versus temperature up to 950 °C (highest measured temperature reaching ZT ∼ 1.3. These results confirm the concept of silicide nanoparticle-in-SiGe-alloy proposed earlier by Mingo et al. [Nano Lett. 9, 711–715 (2009].

  11. Thermal conductivity/diffusivity of SiC-Mullite and SiC-SiC composites

    OpenAIRE

    1987-01-01

    The purposes of this study were to determine as a function of temperature the thermal diffusivity and/or thermal conductivity of SiC-Mullite and SiC-SiC, and to explain the observed behavior in terms of changes in temperature, microstructure, composition, and/or orientation. Materials used in the SiC-Mullite study consisted of single crystal SiC whiskers (prepared from rice hulls or by the vapor-liquid-solid process) dispersed within a polycrystalline mullite matrix. Dur...

  12. Visible photoluminescence related to Si precipitates in Si[sup +]-implanted SiO[sub 2

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu-Iwayama, Tsutomu; Ohshima, Mitsutoshi; Niimi, Tetsuji (Aichi Univ. of Education (Japan). Dept. of Materials Science); Nakao, Setsuo; Saitoh, Kazuo (Government Industrial Research Inst., Nagoya (Japan)); Fujita, Tetsuo (Shizuoka Inst. of Science and Technology (Japan)); Itoh, Noriaki (Nagoya Univ. (Japan). Dept. of Physics)

    1993-08-02

    We have investigated visible photoluminescence from Si[sup +]-implanted SiO[sub 2]. It is found that a luminescence band observed around 2.0 eV in as-implanted specimens disappears on annealing to 500[sup o]C and then a band around 1.7 eV appears on annealing to 1100[sup o]C. We discuss the origin of the luminescence bands in terms of the defects in SiO[sub 2] and the Si nanocrystals grown in SiO[sub 2]. (author).

  13. DESIGN AND FABRICATION OF Si/SiGe PMOSFETs

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Based on theoretical analysis and computer-aided simulation, optimized design prin-ciples for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials, determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage.In the light of these principles, a SiGe PMOSFET is designed and fabricated successfully.Measurement indicates that the SiGe PMOSFET's(L=2μ同洒45 mS/mm(300K) and 92 mS/mm(77K) ,while that is 33mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.

  14. DESIGN AND FABRICATION OF Si/SiGe PMOSFETs

    Institute of Scientific and Technical Information of China (English)

    Yang Peifeng; Zhang Jing; Yi Qiang; Fan Zerui; Li Jingchun; Yu Qi; Wang Xiangzhan; Yang Mohua; He Lin; Li Kaicheng; Tan Kaizhou; Liu Daoguang

    2002-01-01

    Based on theoretical analysis and computer-aided simulation, optimized design principles for Si/SiGe PMOSFET are given in this paper, which include choice of gate materials,determination of germanium percentage and profile in SiGe channel, optimization of thickness of dioxide and silicon cap layer, and adjustment of threshold voltage. In the light of these principles,a SiGe PMOSFET is designed and fabricated successfully. Measurement indicates that the SiGe PMOSFET's (L=2μm) transconductance is 45 mS/mm (300K) and 92mS/mm (77K), while that is 33 mS/mm (300K) and 39mS/mm (77K) in Si PMOSFET with the same structure.

  15. Synthesis and characterization of laminated Si/SiC composites

    Directory of Open Access Journals (Sweden)

    Salma M. Naga

    2013-01-01

    Full Text Available Laminated Si/SiC ceramics were synthesized from porous preforms of biogenous carbon impregnated with Si slurry at a temperature of 1500 °C for 2 h. Due to the capillarity infiltration with Si, both intrinsic micro- and macrostructure in the carbon preform were retained within the final ceramics. The SEM micrographs indicate that the final material exhibits a distinguished laminar structure with successive Si/SiC layers. The produced composites show weight gain of ≈5% after heat treatment in air at 1300 °C for 50 h. The produced bodies could be used as high temperature gas filters as indicated from the permeability results.

  16. An efficient Si light-emitting diode based on an n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterostructure.

    Science.gov (United States)

    Sun, Edward; Su, Fu-Hsiang; Shih, Ying-Tsang; Tsai, Hung-Ling; Chen, Ching-Huang; Wu, Mong-Kai; Yang, Jer-Ren; Chen, Miin-Jang

    2009-11-04

    Si nanocrystals embedded in a SiO2 matrix and an n-type Al-doped ZnO (ZnO:Al) layer were applied to improve the external quantum efficiency from Si in n- ZnO/SiO2-Si nanocrystals-SiO2/p-Si heterojunction light-emitting diodes (LEDs). The Si nanocrystals were grown by low pressure chemical vapor deposition and the ZnO:Al layer was prepared by atomic layer deposition. The n-type ZnO:Al layer acts as an electron injection layer, a transparent conductive window, and an anti-reflection coating to increase the light extraction efficiency. Owing to the spatial confinement of carriers and surface passivation by the surrounding SiO2, the Si nanocrystals embedded in the SiO2 matrix lead to a significant enhancement of the light emission efficiency from Si. An external quantum efficiency up to 4.3 x 10(-4) at the wavelength corresponding to the indirect bandgap of Si was achieved at room temperature.

  17. Miscibility of NiSi{sub 2}, FeSi{sub 2} and Cu{sub 3}Si

    Energy Technology Data Exchange (ETDEWEB)

    Langkau, Sabine [IMKM, Universitaet Leipzig, Scharnhorststr. 20, 04275 Leipzig (Germany)], E-mail: Langkau@rz.uni-leipzig.de; Heuer, Matthias [BerlinSolar GmbH, Magnusstrasse 11, 12489 Berlin (Germany); Hoebler, Hans-Joachim; Bente, Klaus; Kloess, Gert [IMKM, Universitaet Leipzig, Scharnhorststr. 20, 04275 Leipzig (Germany)

    2009-04-17

    Ternary and quaternary chemical composition ranges of the phases NiSi{sub 2}, FeSi{sub 2}, Cu{sub 3}Si, NiSi and FeSi were determined using electron-microprobe-measurements. The system NiSi{sub 2}-Cu{sub 3}Si was found to be eutectic and most probably quasi-binary. Furthermore lattice constants of NiSi{sub 2} and Ni{sub 0.62}Fe{sub 0.41}Si{sub 1.98} were determined by means of X-ray diffraction (XRD)

  18. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1996-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method will permit the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent emphasis has been given to technology transfer activities, and several collaborative research efforts are in progress. Investigations are focusing on applying the joining method to sintered {alpha}-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  19. Joining of SiC ceramics and SiC/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Rabin, B.H. [Idaho National Engineering Lab., Idaho Falls, ID (United States)

    1995-08-01

    This project has successfully developed a practical and reliable method for fabricating SiC ceramic-ceramic joints. This joining method has the potential to facilitate the use of SiC-based ceramics in a variety of elevated temperature fossil energy applications. The technique is based on a reaction bonding approach that provides joint interlayers compatible with SiC, and excellent joint mechanical properties at temperatures exceeding 1000{degrees}C. Recent efforts have focused on transferring the joining technology to industry. Several industrial partners have been identified and collaborative research projects are in progress. Investigations are focusing on applying the joining method to sintered a-SiC and fiber-reinforced SiC/SiC composites for use in applications such as heat exchangers, radiant burners and gas turbine components.

  20. Methods of radiation effects evaluation of SiC/SiC composite and SiC fibers

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. Several methods for radiation effects evaluation of SiC fibers and fiber-reinforced SiC/SiC composite are presented.

  1. Al versus Si competition in FeSiAl alloys

    Energy Technology Data Exchange (ETDEWEB)

    Legarra, E. [Dpto. Electricidad y Electronica, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco (UPV/EHU), CP 644, 48080 Bilbao (Spain)], E-mail: estibaliz.legarra@ehu.es; Apinaniz, E. [Dpto. Fisica Aplicada I, Escuela de Ingenieria Tecnica Superior, Universidad del Pais Vasco, Alameda de Urquijo s/n 48013 Bilbao (Spain); Plazaola, F. [Dpto. Electricidad y Electronica, Facultad de Ciencia y Tecnologia, Universidad del Pais Vasco (UPV/EHU), CP 644, 48080 Bilbao (Spain); Jimenez, J.A. [Centro Nacional de Investigaciones Metalurgicas (CENIM), Avda. Gregorio del amo 8, 28040 Madrid (Spain); Pierna, A.R. [Chemical Engineering and Environmental Department, UPV/EHU, Box 1379, 20008 San Sebastian (Spain)

    2008-10-15

    In FeSiAl alloys, when Si substitutes for Al, important changes take place in the magnetism as well as in the structural properties. Alloys in the two composition series Fe{sub 75}Al{sub 25-x}Si{sub x} (x=0, 7.5, 12.5, 17.5, 25) and Fe{sub 70}Al{sub 30-x}Si{sub x} (x=0, 9, 15, 21, 30) were prepared by induction melting; afterwards they were crushed and then annealed in order to recover the DO{sub 3} stable phase. The deformed FeAl samples show larger lattice parameters than the ordered ones; however, this difference ({delta}a) decreases when Si substitutes for Al until it becomes zero (i.e. until the ordered samples and the deformed ones have the same lattice parameters). This trend is the same for both sample series and does not depend on the Fe content of the alloy. However, the magnetization has a different behaviour depending on the Fe content. For deformed Fe{sub 75}Al{sub 25-x}Si{sub x} alloys the saturation magnetization decreases with increasing Si content while for Fe{sub 70}Al{sub 30-x}Si{sub x} deformed alloys the saturation magnetization has a plateau in which the saturation magnetization values do not vary.

  2. SI and Non-SI Units of Concentration: A Truce?

    Science.gov (United States)

    Rich, Ronald L.

    1986-01-01

    Questions the current usage of the International System of Units (called SI units) in representing chemical notation and terminology. Suggests several additions to the system that relate to concentrations. Outlines new symbols for distinguishing between "concentration" and "molality." Includes tables to illustrate the proposed SI units. (TW)

  3. Synthesis and structural property of Si nanosheets connected to Si nanowires using MnCl{sub 2}/Si powder source

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Erchao [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Ueki, Akiko [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Meng, Xiang [Graduate School of Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Suzuki, Hiroaki [Graduate School of Engineering, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan); Itahara, Hiroshi [Toyota Central R& D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192 (Japan); Tatsuoka, Hirokazu, E-mail: tatsuoka.hirokazu@shizuoka.ac.jp [Graduate School of Integrated Science and Technology, Shizuoka University, 3-5-1 Johuku, Naka-ku, Hamamatsu, Shizuoka 432-8561 (Japan)

    2016-08-15

    Graphical abstract: Si nanosheets connected to Si nanowires synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst avoid the use of air-sensitive SiH{sub 4} or SiCl{sub 4}. It was evident from these structural features of the nanosheets (leaf blade) with nanowires (petiole) that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes of the Si(111) nanosheets was clearly explained by the interference with the extra diffraction spots that arose due to the reciprocal lattice streaking effect. - Highlights: • New Si nanosheets connected to Si nanowires were synthesized using MnCl{sub 2}/Si powders. • The synthesis method has benefits in terms of avoiding air sensitive SiH{sub 4} or SiCl{sub 4}. • Structural property and electron diffraction of the Si nanosheets were clarified. • Odd lattice fringes of the Si nanosheets observed by HRTEM were clearly explained. - Abstract: Si nanosheets connected to Si nanowires were synthesized using a MnCl{sub 2}/Si powder source with an Au catalyst. The synthesis method has benefits in terms of avoiding conventionally used air-sensitive SiH{sub 4} or SiCl{sub 4}. The existence of the Si nanosheets connected to the Si<111> nanowires, like sprouts or leaves with petioles, was observed, and the surface of the nanosheets was Si{111}. The nanosheets were grown in the growth direction of <211> perpendicular to that of the Si nanowires. It was evident from these structural features of the nanosheets that the nanosheets were formed by the twin-plane reentrant-edge mechanism. The feature of the observed lattice fringes, which do not appear for Si bulk crystals, of the Si(111) nanosheets obtained by high resolution transmission electron microscopy was clearly explained due to the extra diffraction spots that arose by the reciprocal lattice streaking effect.

  4. Biomorphous SiSiC/Al-Si ceramic composites manufactured by squeeze casting: microstructure and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Zollfrank, C.; Travitzky, N.; Sieber, H.; Greil, P. [Department of Materials Science, Glass and Ceramics, University of Erlangen-Nuernberg (Germany); Selchert, T. [Advanced Ceramics Group, Technical University of Hamburg-Harburg (Germany)

    2005-08-01

    SiSiC/Al-Si composites were fabricated by pressure-assisted infiltration of an Al-Si alloy into porous biocarbon preforms derived from the rattan palm. Al-Si alloy was found in the pore channels of the biomorphous SiSiC preform, whereas SiC and carbon were present in the struts. The formation of a detrimental Al{sub 4}C{sub 3}-phase was not observed in the composites. A bending strength of 200 MPa was measured. The fractured surfaces showed pull-out of the Al-alloy. (Abstract Copyright [2005], Wiley Periodicals, Inc.)

  5. Improvement of parameters in a-Si(p)/c-Si(n)/a-Si(n) solar cells

    Science.gov (United States)

    Moustafa Bouzaki, Mohammed; Aillerie, Michel; Ould Saad Hamady, Sidi; Chadel, Meriem; Benyoucef, Boumediene

    2016-10-01

    We analyzed and discussed the influence of thickness and doping concentration of the different layers in a-Si(p)/c-Si(n)/a-Si(n) photovoltaic (PV) cells with the aim of increasing its efficiency while decreasing its global cost. Compared to the efficiency of a standard marketed PV cell, elaborated with a ZnO transparent conductive oxide (TCO) layer but without Back Surface Field (BSF) layer, an optimization of the thickness and dopant concentration of both the emitter a-Si(p) and absorber c-Si(n) layers will gain about 3% in the global efficiency of the cell. The results also reveal that with introduction of the third layer, i.e. the BSF layer, the efficiency always achieves values above 20% and all other parameters of the cell, such as the open-circuit voltage, the short-circuit current and the fill-factor, are strongly affected by the thickness and dopant concentration of the layers. The values of all parameters are given and discussed in the paper. Thereby, the simulation results give for an optimized a-Si(p)/c-Si(n)/a-Si(n) PV cells the possibility to decrease the thickness of the absorber layer down to 50 μm which is lower than in the state-of-the-art. This structure of the cell achieves suitable properties for high efficiency, cost-effectiveness and reliable heterojunction (HJ) solar cell applications.

  6. Fabrication and Mechanical Properties of SiCw(p/SiC-Si Composites by Liquid Si Infiltration using Pyrolysed Rice Husks and SiC Powders as Precursors

    Directory of Open Access Journals (Sweden)

    Dan Zhu

    2014-03-01

    Full Text Available Dense silicon carbide (SiC matrix composites with SiC whiskers and particles as reinforcement were prepared by infiltrating molten Si at 1550 °C into porous preforms composed of pyrolysed rice husks (RHs and extra added SiC powder in different ratios. The Vickers hardness of the composites showed an increase from 18.6 to 21.3 GPa when the amount of SiC added in the preforms was 20% (w/w, and then decreased to 17.3 GPa with the increase of SiC added in the preforms up to 80% (w/w. The values of flexural strength of the composites initially decreased when 20% (w/w SiC was added in the preform and then increased to 587 MPa when the SiC concentration reached 80% (w/w. The refinement of SiC particle sizes and the improvement of the microstructure in particle distribution of the composites due to the addition of external SiC played an effective role in improving the mechanical properties of the composites.

  7. Fabrication and evaluation of propagation loss of Si/SiGe/Si photonic-wire waveguides for Si based optical modulator

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Younghyun, E-mail: yhkim@mosfet.t.u-tokyo.ac.jp [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Takenaka, Mitsuru [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Osada, Takenori; Hata, Masahiko [Sumitomo Chemical Co. Ltd., 6 Kitahara, Tsukuba, Ibaraki 300-3294 (Japan); Takagi, Shinichi [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2014-04-30

    We have characterized photonic-wire waveguides with Si/SiGe/Si heterostructure ribs for Si-based optical modulators. The Si (80 nm)/Si{sub 0.72}Ge{sub 0.28} (40 nm) layers grown on Si-on-insulator by molecular beam epitaxy for optical modulators were evaluated by in-situ reflection high-energy electron diffraction, atomic force microscope, X-ray diffraction and Raman spectroscopy, exhibiting that the fully-strained highly-crystalline SiGe layer was obtained. We have evaluated the propagation loss of the Si/strained SiGe/Si photonic-wire waveguides. The wavelength dependence of the propagation loss exhibits the bandgap narrowing of the strained Si{sub 0.72}Ge{sub 0.28}, while the optical absorption of the strained Si{sub 0.72}Ge{sub 0.28} is not significant for the optical modulator application at 1.55-μm wavelength. - Highlights: • We have characterized photonic-wire waveguides with Si/SiGe/Si heterostructure ribs. • The Si/Si{sub 0.72}Ge{sub 0.28} grown on Si-on-insulator were evaluated to be fully strained. • We have fabricated and evaluated the Si/strained SiGe/Si photonic-wire waveguides. • The wavelength dependence exhibits bandgap narrowing of the strained Si{sub 0.72}Ge{sub 0.28}. • Optical absorption of the SiGe is not significant for optical modulators at 1.55 μm.

  8. Ge-on-Si optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Liu Jifeng, E-mail: Jifeng.Liu@Dartmouth.edu [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Camacho-Aguilera, Rodolfo; Bessette, Jonathan T.; Sun, Xiaochen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States); Wang Xiaoxin [Thayer School of Engineering, Dartmouth College, Hanover, NH 03755 (United States); Cai Yan; Kimerling, Lionel C.; Michel, Jurgen [Microphotonics Center, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2012-02-01

    Electronic-photonic synergy has become an increasingly clear solution to enhance the bandwidth and improve the energy efficiency of information systems. Monolithic integration of optoelectronic devices is the ideal solution for large-scale electronic-photonic synergy. Due to its pseudo-direct gap behavior in optoelectronic properties and compatibility with Si electronics, epitaxial Ge-on-Si has become an attractive solution for monolithic optoelectronics. In this paper we will review recent progress in Ge-on-Si optoelectronics, including photodetectors, electroabsorption modulators, and lasers. The performance of these devices has been enhanced by band-engineering such as tensile strain and n-type doping, which transforms Ge towards a direct gap material. Selective growth reduces defect density and facilitates monolithic integration at the same time. Ge-on-Si photodetectors have approached or exceeded the performance of their III-V counterparts, with bandwidth-efficiency product > 30 GHz for p-i-n photodiodes and bandwidth-gain product > 340 GHz for avalanche photodiodes. Enhanced Franz-Keldysh effect in tensile-strained Ge offers ultralow energy photonic modulation with < 30 fJ/bit energy consumption and > 100 GHz intrinsic bandwidth. Room temperature optically-pumped lasing as well as electroluminescence has also been achieved from the direct gap transition of band-engineered Ge-on-Si waveguides. These results indicate that band-engineered Ge-on-Si is promising to achieve monolithic active optoelectronic devices on a Si platform.

  9. Si Isotopes of Brownleeite

    Science.gov (United States)

    Nakamura-Messenger, K.; Messenger, Scott R.; Ito, M.; Keller, L. P.; Clemett, S. J.; Jones, J. H.; Tatsuoka, H.; Zolensky, M. E.; Tatsuoka, H.

    2010-01-01

    Brownleeite is a manganese silicide, ideally stoichiometric MnSi, not previously observed in nature until its discovery within an interplanetary dust particle (IDP) that likely originated from a comet [1]. Three discrete brownleeite grains in the IDP L2055 I3 (4 microns in size, hereafter IDP I3) were identified with maximum dimensions of 100, 250 and 600 nm and fully analyzed using scanning-transmission electron microscopy (STEM) [1]. One of the grains (100 nm in size) was poikilitically enclosed by low-Fe, Mn-enriched (LIME) olivine. LIME olivine is epitaxial to the brownleeite with the brownleeite (200) parallel to the olivine c* [1]. LIME olivine is an enigmatic phase first reported from chondritic porous IDPs and some unequilibrated ordinary chondrites [ 2], that is commonly observed in chondritic-porous IDPs. Recently, LIME olivine has been also found in comet Wild-2 (Stardust) samples [3], indicating that LIME olivine is a common mineral component of comets. LIME olivine has been proposed to form as a high temperature condensate in the protosolar nebula [2]. Brownleeite grains also likely formed as high-temperature condensates either in the early Solar System or in the outflow of an evolved star or supernova explosion [1]. The isotopic composition of the brownleeite grains may strongly constrain their ultimate source. To test this hypothesis, we performed isotopic analyses of the brownleeite and the associated LIME olivine, using the NASA/JSC NanoSIMS 50L ion microprobe.

  10. Formation of extended defects in SiGe/Si heterostructures with SiGeC intermediate layers

    Energy Technology Data Exchange (ETDEWEB)

    Vdovin, V.I.; Reznik, V.Ya. [Institute for Chemical Problems of Microelectronics, Moscow (Russian Federation); Torack, T.A.; Fei, Lu [MEMC Inc, St Peters, MO (United States); Mil' vidskii, M.G. [Institute of Rare Metals ' Giredmet' , Moscow (Russian Federation); Falster, R. [MEMC Electronic Materials SpA, Novara (Italy)

    2007-07-01

    The generation of misfit dislocations (MDs) and stacking faults (SFs) was studied by TEM and preferential chemical etching in multilayer Si(001)/SiGe/SiGeC(10 nm)/SiGe/Si heterostructures grown by CVD at 650 C. Prior to growth of Si layer, the other part of heterostructure was annealed at 950 C in the growth chamber to get relaxed buffer layers and strained Si layer free of extended defects. We used SiGe alloys with Ge content of 24 at.% and C content of 0.5 at.%. Carbon in the strained SiGe matrix was found to promote high rates of strain relaxation through the nucleation of perfect dislocation loops close to the interface with Si substrate. For Si layer thickness >10 nm, threading dislocations split in these layers under tensile strain to form SFs. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Organic thin film transistors with a SiO2/SiNx/SiO2 composite insulator layer

    Institute of Scientific and Technical Information of China (English)

    Liu Xiang; Liu Hui

    2011-01-01

    We have investigated a SiO2/SiNx/SiO2 composite insulation layer structured gate dielectric for an organic thin film transistor (OTFT) with the purpose of improving the performance of the SiO2 gate insulator.The SiO2/SiNx/SiO2 composite insulation layer was prepared by magnetron sputtering.Compared with the same thickness of a SiO2 insulation layer device,the SiO2/SiNx/SiO2 composite insulation layer is an effective method of fabricating OTFT with improved electric characteristics and decreased leakage current.Electrical parameters such as carrier mobility by field effect measurement have been calculated.The performances of different insulating layer devices have been studied,and the results demonstrate that when the insulation layer thickness increases,the off-state current decreases.

  12. Study of New Way about Si/Si Bonding

    Institute of Scientific and Technical Information of China (English)

    2000-01-01

    A new set of technique was adopted in bonding Si-Si by using Ge (Ⅳ element),which is used as the substitute for the common hydrophilic method. The bond layer has no holes, and the edge bond-rate amounts to above 98%, and the bond strength is above 2156 Pa. By doping the same kind of dopant with low-resistance in Ge, the stress compensation was realized.

  13. Formation of microtubes from strained SiGe/Si heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Qin, H [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Shaji, N [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Merrill, N E [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Kim, H S [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Toonen, R C [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Blick, R H [Laboratory of Molecular-scale Engineering, Department of Electrical and Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, WI 53706 (United States); Roberts, M M [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Savage, D E [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Lagally, M G [Department of Materials Science and Engineering, University of Wisconsin-Madison, 1500 Engineering Drive, Madison, WI 53706 (United States); Celler, G [SOITEC USA Inc., 2 Centennial Drive, Peabody, MA 01960 (United States)

    2005-11-15

    We report the formation of micrometre-sized SiGe/Si tubes by releasing strained SiGe/Si bilayers from substrates in a wet chemical-etching process. In order to explore statistical studies of dynamic formation of microtubes, we fabricated arrays of square bilayers. Due to the dynamic change in curvature of the bilayers, and hence the underlying etch channels, the etching process deviates from a transport-controlled regime to one of kinetic controlled. We identified two distinct modes of etching. A slow etching mode is associated with symmetric surface deformation in which the bilayers mostly retain their initial pattern. In the fast mode, bilayers are asymmetrically deformed while large etch channels are induced and etching becomes kinetically controlled. Etch rate dispersion is directly related to the degree of asymmetry in surface deformation. When the dimensions of the bilayers become significantly larger than the curvature radius, kinetic etching dominates. During the formation of tubes, SiGe/Si bilayers strongly interact with the liquid environment of etchant and solvent. Assisted by the surface tension of evaporating liquids, the tubes are drawn near the substrate and eventually fixed to it because of van der Waals forces. Our study illuminates the dynamic etching and curling processes involved with and provides insight on how a uniform etch rate and consistent curling directions can be maintained.

  14. Formation of microtubes from strained SiGe/Si heterostructures

    Science.gov (United States)

    Qin, H.; Shaji, N.; Merrill, N. E.; Kim, H. S.; Toonen, R. C.; Blick, R. H.; Roberts, M. M.; Savage, D. E.; Lagally, M. G.; Celler, G.

    2005-11-01

    We report the formation of micrometre-sized SiGe/Si tubes by releasing strained SiGe/Si bilayers from substrates in a wet chemical-etching process. In order to explore statistical studies of dynamic formation of microtubes, we fabricated arrays of square bilayers. Due to the dynamic change in curvature of the bilayers, and hence the underlying etch channels, the etching process deviates from a transport-controlled regime to one of kinetic controlled. We identified two distinct modes of etching. A slow etching mode is associated with symmetric surface deformation in which the bilayers mostly retain their initial pattern. In the fast mode, bilayers are asymmetrically deformed while large etch channels are induced and etching becomes kinetically controlled. Etch rate dispersion is directly related to the degree of asymmetry in surface deformation. When the dimensions of the bilayers become significantly larger than the curvature radius, kinetic etching dominates. During the formation of tubes, SiGe/Si bilayers strongly interact with the liquid environment of etchant and solvent. Assisted by the surface tension of evaporating liquids, the tubes are drawn near the substrate and eventually fixed to it because of van der Waals forces. Our study illuminates the dynamic etching and curling processes involved with and provides insight on how a uniform etch rate and consistent curling directions can be maintained.

  15. The origin of blue photoluminescence from nc-Si/SiO2 multilayers

    Institute of Scientific and Technical Information of China (English)

    Ma Zhong-Yuan; Xu Ling; Huang Xin-Fan; Chen Kun-Ji; Feng Duan; Guo Si-Hua; Chen De-Yuan; Wei De-Yuan; Yao Yao; Zhou Jiang; Huang Rui; Li Wei; Xu Jun

    2008-01-01

    Intensive blue photoluminescence (PL) was observed at room temperature from the nanocrystalline-Si/SiO2 (ncSi/SiO2) multilayers (MLs) obtained by thermal annealing of SiO/SiO2 MLs for the first time.By controlling the size of nc-Si formed in SiO sublayer from 3.5 to 1.5 nm,the PL peak blueshifts from 457 to 411 nm.Combining the analysis of TEM,Raman and absorption measurement,this paper attributes the blue PL to multiple luminescent centres at the interface of nc-Si and SiO2.

  16. SiC/Si's CRYSTALLOGRAPHIC ORIENTATION RELATIONSHIP IN SiCp/Al-Si COMPOSITES%SiCp/Al-Si复合材料中SiC/Si的晶体学位向关系

    Institute of Scientific and Technical Information of China (English)

    隋贤栋; 罗承萍; 欧阳柳章; 骆灼旋

    2000-01-01

    用TEM研究了离心铸造和挤压铸造的SiCp/ZL109复合材料,发现Si优先在SiC表面上形核、长大,并形成大量"界面Si"及SiC/Si界面.SiC与Si之间不存在固定的晶体学位向关系,但存在(1101)sic//(111)si,[1120]sic∥[112]si优先出现的位向关系,而(0001)sic∥(111)si不是优先出现的位向关系.

  17. Dimensionless Units in the SI

    CERN Document Server

    Mohr, Peter J

    2014-01-01

    The International System of Units (SI) is supposed to be coherent. That is, when a combination of units is replaced by an equivalent unit, there is no additional numerical factor. Here we consider dimensionless units as defined in the SI, {\\it e.g.} angular units like radians or steradians and counting units like radioactive decays or molecules. We show that an incoherence may arise when different units of this type are replaced by a single dimensionless unit, the unit "one", and suggest how to properly include such units into the SI in order to remove the incoherence. In particular, we argue that the radian is the appropriate coherent unit for angles and that hertz is not a coherent unit in the SI. We also discuss how including angular and counting units affects the fundamental constants.

  18. THE STRUCTURE OF LIQUID LI-SI ALLOYS

    NARCIS (Netherlands)

    DEJONG, PHK; VERKERK, P; VANDERLUGT, W; DEGRAAF, LA

    1993-01-01

    The reverse Monte Carlo method is used to analyse neutron diffraction data on liquid Li65Si35. A well defined Si-Si partial pair correlation function is obtained with strong indications for covalent Si-Si bonds. It is also clear that most of the Si4 stars and Si5 rings occurring in solid Li12Si7 hav

  19. SEMICONDUCTOR MATERIALS Photoelectric conversion characteristics of ZnO/SiC/Si heterojunctions

    Science.gov (United States)

    Xiaopeng, Wu; Xiaoqing, Chen; Lijie, Sun; Shun, Mao; Zhuxi, Fu

    2010-10-01

    A series of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were prepared by DC sputtering. Their structural properties, I—V curves, photovoltaic effects and photo-response spectra were studied. The photoelectric conversion characteristics of n-ZnO/n-SiC/p-Si and n-ZnO/p-Si heterojunctions were investigated. It is found that the photoelectric conversion efficiency of the n-ZnO/n-SiC/p-Si heterojunction is about four times higher than that of the n-ZnO/p-Si heterojunction. The photovoltaic response spectrum indicated that the photoresponse curve of n-ZnO/n-SiC/p-Si increased more strongly than that of n-ZnO/p-Si with the wavelength increasing. It shows that the photoresponse of n-ZnO/p-Si can be enhanced when inserting a 3C-SiC layer between ZnO and Si. There is one inflexion in the photocurrent response curve of the n-ZnO/p-Si heterojunction and two inflexions in that of the n-ZnO/n-SiC/p-Si heterojunction. It is clear that the 3C-SiC plays an important role in the photoelectric conversion of the n-ZnO/n-SiC/p-Si heterojunction.

  20. SiC-SiC and C-SiC Honeycomb for Advanced Flight Structures Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed project builds upon the work done in Phase I with the development of a C-SiC CMC honeycomb material that was successfully tested for mechanical...

  1. Ionic S(N)i-Si Nucleophilic Substitution in N-Methylaniline-Induced Si-Si Bond Cleavages of Si2Cl6.

    Science.gov (United States)

    Zhang, Jie; Xie, Ju; Lee, Myong Euy; Zhang, Lin; Zuo, Yujing; Feng, Shengyu

    2016-03-24

    N-Methylaniline-induced Si-Si bond cleavage of Si2Cl6 has been theoretically studied. All calculations were performed by using DFT at the MPWB1K/6-311++G(3df,2p)//MPWB1K/6-31+G(d,p) levels. An ionic SN i-Si nucleophilic substitution mechanism, which is a newly found nucleophilic substitution in silicon-containing compounds, is proposed in the N-methylaniline-induced Si-Si bond cleavage in Si2Cl6. Unlike general S(N)i-Si nucleophilic substitutions that go through a pentacoordinated silicon transition state, ionic nucleophilic substitution goes through a tetracoordinated silicon transition state, in which the Si-Si bond is broken and siliconium ions are formed. Special cleavage of the Si-Si bond is presumably due to the good bonding strength between Si and N atoms, which leads to polarization of the Si-Si bond and eventually to heterolytic cleavage. Calculation results show that, in excess N-methylaniline, the final products of the reaction, including (NMePh)(3-n) SiHCl(n) (n=0-2) and (NMePh)(4-n) SiCl(n) (n=2-3), are the Si-Si cleavage products of Si2Cl6 and the corresponding amination products of the former. The ionic S(N)i-Si nucleophilic substitution mechanism can also be employed to describe the amination of chlorosilane by N-methylaniline. The suggested mechanisms are consistent with experimental data.

  2. An Introduction to the New SI

    Science.gov (United States)

    Knotts, Sandra; Mohr, Peter J.; Phillips, William D.

    2017-01-01

    Plans are under way to redefine the International System of Units (SI) around 2018. The new SI specifies the values of certain physical constants to define units. This article explains the new SI in order to provide a resource for high school teachers as well as for advanced students already familiar with the pre-2018 SI.

  3. An Introduction to the New SI

    Science.gov (United States)

    Knotts, Sandra; Mohr, Peter J.; Phillips, William D.

    2017-01-01

    Plans are under way to redefine the International System of Units (SI) around 2018. The new SI specifies the values of certain physical constants to define units. This article explains the new SI in order to provide a resource for high school teachers as well as for advanced students already familiar with the pre-2018 SI.

  4. Revealing heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys.

    Science.gov (United States)

    Li, Jiehua; Hage, Fredrik S; Liu, Xiangfa; Ramasse, Quentin; Schumacher, Peter

    2016-04-28

    The heterogeneous nucleation of primary Si and eutectic Si can be attributed to the presence of AlP. Although P, in the form of AlP particles, is usually observed in the centre of primary Si, there is still a lack of detailed investigations on the distribution of P within primary Si and eutectic Si in hypereutectic Al-Si alloys at the atomic scale. Here, we report an atomic-scale experimental investigation on the distribution of P in hypereutectic Al-Si alloys. P, in the form of AlP particles, was observed in the centre of primary Si. However, no significant amount of P was detected within primary Si, eutectic Si and the Al matrix. Instead, P was observed at the interface between the Al matrix and eutectic Si, strongly indicating that P, in the form of AlP particles (or AlP 'patch' dependent on the P concentration), may have nucleated on the surface of the Al matrix and thereby enhanced the heterogeneous nucleation of eutectic Si. The present investigation reveals some novel insights into heterogeneous nucleation of primary Si and eutectic Si by AlP in hypereutectic Al-Si alloys and can be used to further develop heterogeneous nucleation mechanisms based on adsorption.

  5. Quantum wells based on Si/SiO{sub x} stacks for nanostructured absorbers

    Energy Technology Data Exchange (ETDEWEB)

    Berghoff, B.; Suckow, S.; Roelver, R.; Spangenberg, B.; Kurz, H. [Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074 Aachen (Germany); Sologubenko, A.; Mayer, J. [Central Facility for Electron Microscopy, RWTH Aachen University, Ahornstr. 55, 52074 Aachen (Germany); Ernst Ruska Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich, 52426 Juelich (Germany)

    2010-11-15

    We report on electrical transport and quantum confinement in thermally annealed Si/SiO{sub x} multiple quantum well (QW) stacks. Results are correlated with the morphology of the stacks. High temperature annealing of Si/SiO{sub x} stacks leads to precipitation of excess Si from the SiO{sub x} layers, which enhances the degree of crystallization and increases the grain sizes in the Si QWs compared to the conventional Si/SiO{sub 2} system. Moreover, the excess Si forms highly conductive pathways between adjacent Si QWs that are separated by ultrathin silicon oxide barriers. This results in an increase of conductivity by up to 10 orders of magnitude compared to the tunneling dominated transport in Si/SiO{sub 2} stacks. The stacks exhibit a distinct quantum confinement as confirmed by photoluminescence measurements. (author)

  6. Si/SiGe/Si HBT直流特性的可靠性%Reliability of DC characteristics in mesa Si/SiGe/Si HBT

    Institute of Scientific and Technical Information of China (English)

    崔福现; 张万荣

    2003-01-01

    对单台面SiGe HBT在E-B结反偏应力下直流特性的可靠性进行了研究.研究结果表明,随应力时间的增加,开启电压增加,直流电流增益下降,特别是在低E-B正偏电压时下降明显;而交流电流增益退化缓慢.

  7. Construction and characterization of spherical Si solar cells combined with SiC electric power inverter

    Science.gov (United States)

    Oku, Takeo; Matsumoto, Taisuke; Hiramatsu, Kouichi; Yasuda, Masashi; Shimono, Akio; Takeda, Yoshikazu; Murozono, Mikio

    2015-02-01

    Spherical silicon (Si) photovoltaic solar cell systems combined with an electric power inverter using silicon carbide (SiC) field-effect transistor (FET) were constructed and characterized, which were compared with an ordinary Si-based converter. The SiC-FET devices were introduced in the direct current-alternating current (DC-AC) converter, which was connected with the solar panels. The spherical Si solar cells were used as the power sources, and the spherical Si panels are lighter and more flexible compared with the ordinary flat Si solar panels. Conversion efficiencies of the spherical Si solar cells were improved by using the SiC-FET.

  8. Circumferential tensile test method for mechanical property evaluation of SiC/SiC tube

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Ju-Hyeon, E-mail: 15096018@mmm.muroran-it.ac.jp [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kishimoto, Hirotatsu [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Park, Joon-soo [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Nakazato, Naofumi [Graduate School, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan); Kohyama, Akira [OASIS, Muroran Institute of Technology, 27-1, Muroran, Hokkaido (Japan)

    2016-11-01

    Highlights: • NITE SiC/SiC cooling channel system to be a candidate of divertor system in future. • Hoop strength is one of the important factors for a tube. • This research studies the relationship between deformation and strain of SiC/SiC tube. - Abstract: SiC fiber reinforced/SiC matrix (SiC/SiC) composite is expected to be a candidate material for the first-wall, components in the blanket and divertor of fusion reactors in future. In such components, SiC/SiC composites need to be formed to be various shapes. SiC/SiC tubes has been expected to be employed for blanket and divertor after DEMO reactor, but there is not established mechanical investigation technique. Recent progress of SiC/SiC processing techniques is likely to realize strong, having gas tightness SiC/SiC tubes which will contribute for the development of fusion reactors. This research studies the relationship between deformation and strain of SiC/SiC tube using a circumferential tensile test method to establish a mechanical property investigation method of SiC/SiC tubes.

  9. Reactive diffusion bonding of SiCp/Al composites by insert layers of mixed Al-Si and Al-Si-SiC powders

    Institute of Scientific and Technical Information of China (English)

    Jihua Huang; Yueling Dong; Yun Wan; Jiangang Zhang; Hua Zhang

    2005-01-01

    Mixed Al-Si and Al-Si-SiC powders were employed as insert layers to reactive diffusion bond SiCp/6063 MMC (metal matrix composites). The results show that SiCp/6063 MMC joints bonded by the insert layer of the mixed Al-Si powder have a dense joining layer with a typical hypoeutectic microstructure. Using the mixed Al-Si-SiC powder as the insert layer, SiCp/6063 MMC can be reactive diffusion bonded by a composite joint. Because of the SiC segregation, however, there are a number of porous zones in the joining layer, which results in the bad shear strength of the joints reactive diffusion bonded by the insert layer of the mixed Al-SiSiC powder, even lower than that of the joints reactive diffusion bonded by the insert layer of the mixed Al-Si powder. Ti and Mg added in the insert layers obviously improve the strength of the joints reactive diffusion bonded by the insert layer of the mixed AlSi-SiC powder, especially, Mg has a more obvious effect.

  10. Si{endash}N linkage in ultrabright, ultrasmall Si nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Rogozhina, E.; Belomoin, G.; Smith, A.; Abuhassan, L.; Barry, N.; Akcakir, O.; Braun, P. V.; Nayfeh, M. H.

    2001-06-04

    Ultrabright ultrasmall ({similar_to}1 nm) blue luminescent Si{sub 29} nanoparticles are chlorinated by reaction with Cl{sub 2} gas. A Si{endash}N linkage is formed by the reaction of the chlorinated particles with the functional amine group in butylamine. Fourier transform infrared spectroscopy and x-ray photospectroscopy measurements confirm the N linkage and the presence of the butyl group, while emission, excitation, and autocorrelation femtosecond optical spectroscopy show that, after the linkage formation, the particles with the ultrabright blue luminescent remain, but with a redshift of 40 nm. {copyright} 2001 American Institute of Physics.

  11. Room-temperature formation of Pt$_3$Si/Pt$_2$Si films on poly-Si substrates

    CERN Document Server

    Dubkov, V P; Chizh, K V; Yuryev, V A

    2016-01-01

    We propose a way of formation of thin bilayer Pt$_3$Si/Pt$_2$Si films at room temperature on poly-Si substrates by Pt magnetron sputtering and wet etching, obtain such film, investigate its structure and phase composition and estimate the thickness of its layers. We verify by direct x-ray photoelectron-spectroscopic measurements our previous observation of the Pt$_2$Si layer formaton between Pt and poly-Si films as a result of Pt magnetron sputtering at room temperature. This layer likely appears due to high enough temperature of Pt ions in the magnetron plasma sufficient for chemical reaction of the silicide film formation on the Si surface. The Pt$_3$Si layer likely forms from the Pt--Pt$_3$Si layer (Pt$_{95}$Si$_5$), which arises under Pt film during the magnetron sputtering, as a result of Pt removal by wet etching.

  12. Analyses of the As doping of SiO{sub 2}/Si/SiO{sub 2} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Ruffino, Francesco; Miritello, Maria [CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Tomasello, Mario Vincenzo [Scuola Superiore di Catania, via San Nullo 5/i, 95123 Catania (Italy); De Bastiani, Riccardo; Grimaldi, Maria Grazia [Dipartimento di Fisica ed Astronomia, Universita di Catania, via S. Sofia 64, 95123 Catania (Italy); CNR-IMM MATIS, via S. Sofia 64, 95123 Catania (Italy); Nicotra, Giuseppe; Spinella, Corrado [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), VIII Strada 5, 95121 Catania (Italy)

    2011-03-15

    We illustrate the behaviour of As when it is confined, by the implantation technique, in a SiO{sub 2}(70nm)/Si(30nm)/SiO{sub 2}(70nm) multilayer and its spatial redistribution when annealing processes are performed. By Rutherford backscattering spectrometry and Z-contrast transmission electron microscopy we found an As accumulation at the Si/SiO{sub 2} interfaces and at the Si grain boundaries with no segregation of the As in the Si layer. Such an effect is in agreement with a model that assumes a traps distribution in the Si in the first 2-3 nm above the SiO{sub 2}/Si interfaces and along the Si grain boundaries. The traps concentration at the Si/SiO{sub 2} interfaces was estimated in 10{sup 14} traps/cm{sup 2}. The outlined results can open perspectives on the doping properties of As in Si nanocrystals, whose applications in nanoelectronics and optoelectronics are widely investigated (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  13. Thickness effect on the formation of SiC nanoparticles in sandwiched Si/C/Si and C/Si multilayers

    Energy Technology Data Exchange (ETDEWEB)

    Chung, C.K., E-mail: ckchung@mail.ncku.edu.t [Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan (China); Wu, B.H.; Chen, T.S.; Peng, C.C.; Lai, C.W. [Department of Mechanical Engineering, Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan, 701, Taiwan (China)

    2009-08-31

    The effect of carbon (C) and amorphous silicon (a-Si) thicknesses on the formation of SiC nanoparticles (np-SiC) in sandwiched Si/C/Si and C/Si multilayers on Si(100) substrates were investigated using ultra-high-vacuum ion beam sputtering system and vacuum thermal annealing at 500, 700, 900 {sup o}C for 1.0 h. Three-layer a-Si/C/a-Si structures with thicknesses of 50/200/50 nm and 75/150/75 nm and a two-layer C/a-Si structure of 200/50 nm were examined in this study. The size and density of np-SiC were strongly influenced by the annealing temperature, a-Si thickness and layer number. Many np-SiC appeared at 900 {sup o}C at a density order about 10{sup 8} cm{sup -2} in both three-layer structures while no particles formed in the two-layer structure. The thick a-Si structure (75/150/75 nm) produces a particle density approximately 1.8 times higher than thin structure (50/200/50 nm). This implies that thick a-Si structure had a lower activation energy of SiC formation compared to the thin a-Si structure. Few particles were found at 700 {sup o}C and no particles at 500 {sup o}C in both three-layer structures. The np-SiC formation is a thermally activated reaction. The higher temperature leads to higher particle density. A mechanism of np-SiC formation in thermodynamic and kinetic viewpoints is proposed.

  14. Mo-Si alloy development

    Energy Technology Data Exchange (ETDEWEB)

    Liu, C.T.; Heatherly, L.; Wright, J.L. [Oak Ridge National Lab., TN (United States)

    1996-06-01

    The objective of this task is to develop new-generation corrosion-resistant Mo-Si intermetallic alloys as hot components in advanced fossil energy conversion and combustion systems. The initial effort is devoted to Mo{sub 5}-Si{sub 3}-base (MSB) alloys containing boron additions. Three MSB alloys based on Mo-10.5Si-1.1B (wt %), weighing 1500 g were prepared by hot pressing of elemental and alloy powders at temperatures to 1600{degrees}C in vacuum. Microporosities and glassy-phase (probably silicate phases) formations are identified as the major concerns for preparation of MSB alloys by powder metallurgy. Suggestions are made to alleviate the problems of material processing.

  15. HV/CVD Grown Relaxed SiGe Buffer Layers for SiGe HMOSFETs

    Institute of Scientific and Technical Information of China (English)

    黄文韬; 罗广礼; 史进; 邓宁; 陈培毅; 钱佩信

    2003-01-01

    High-vacuum/chemical-vapor deposition (HV/CVD) system was used to grow relaxed SiGe buffer layers on Si substrates. Several methods were then used to analyze the quality of the SiGe films. X-ray diffraction and Raman spectroscopy showed that the upper layer was almost fully relaxed. Second ion mass spectroscopy showed that the Ge compositions were step-graded. Transmission electron microscopy showed that the misfit dislocations were restrained to the graded SiGe layers. Tests of the electrical properties of tensile-strained Si on relaxed SiGe buffer layers showed that their transconductances were higher than that of Si devices. These results verify the high quality of the relaxed SiGe buffer layer. The calculated critical layer thicknesses of the graded Si1-xGex layer on Si substrate and a Si layer on the relaxed SiGe buffer layer agree well with experimental results.

  16. High thermal conductivity SiC/SiC composites for fusion applications -- 2

    Energy Technology Data Exchange (ETDEWEB)

    Kowbel, W.; Tsou, K.T.; Withers, J.C. [MER Corp., Tucson, AZ (United States); Youngblood, G.E. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion Structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23--24, 1997. An unirradiated SiC/SiC composite made with MER-developed CVR SiC fiber and a hybrid PIP/CVI SiC matrix exhibited room temperature transverse thermal conductivity of 45 W/mK. An unirradiated SiC/SiC composite made from C/C composite totally CVR-converted to a SiC/SiC composite exhibited transverse thermal conductivity values of 75 and 35 W/mK at 25 and 1000 C, respectively. Both types of SiC/SiC composites exhibited non-brittle failure in flexure testing.

  17. Progress of Si-based Optoelectronic Devices

    Institute of Scientific and Technical Information of China (English)

    PENG Ying-cai; FU Guang-sheng; WANG Ying-long; SHANG Yong

    2004-01-01

    Si-based optoelectronics is becoming a very active research area due to its potential applications to optical communications. One of the major goals of this study is to realize ali-Si optoelectronic integrated circuit. This is due to the fact that Si- based optoelectronic technology can be compatible with Si microelectronic technology. If Si-based optoelectronic devices and integrated circuits can be achieved,it will lead to a new informational technological revolution. In the article, the current developments of this exciting field are mainly reviewed in the recent years. The involved contents are the realization of various Si-based optoelectronic devices, such as light-emitting diodes,optical waveguides devices, Si photonic bandgap crystals,and Si laser,etc. Finally, the developed tendency of all-Si optoelectronic integrated technology are predicted in the near future.

  18. Honda Civic Mugen Si Sedan

    Institute of Scientific and Technical Information of China (English)

    Prometheus

    2007-01-01

    美国本田汽车公司宣布08款本田Civic Mugen,SiSedan将于10月中旬正式亮相。这辆Civic Mugen Si Sedan配备有一个高性能的悬挂系统、锻造的铝质车轮、空气动力挠流体的设计式样和一个跑车化调校排气系统,新车搭载1998cc i-VTEC直四自然吸气引擎,

  19. Analysis of Si/SiGe Heterostructure Solar Cell

    Directory of Open Access Journals (Sweden)

    Ashish Kumar Singh

    2014-01-01

    Full Text Available Sunlight is the largest source of carbon-neutral energy. Large amount of energy, about 4.3 × 1020 J/hr (Lewis, 2005, is radiated because of nuclear fusion reaction by sun, but it is unfortunate that it is not exploited to its maximum level. Various photovoltaic researches are ongoing to find low cost, and highly efficient solar cell to fulfil looming energy crisis around the globe. Thin film solar cell along with enhanced absorption property will be the best, so combination of SiGe alloy is considered. The paper presented here consists of a numerical model of Si/Si1-xGex heterostructure solar cell. The research has investigated characteristics such as short circuit current density (Jsc, generation rate (G, absorption coefficient (α, and open circuit voltage (Voc with optimal Ge concentration. The addition of Ge content to Si layer will affect the property of material and can be calculated with the use of Vegard’s law. Due to this, short circuit current density increases.

  20. Morphology Analysis of Si Island Arrays on Si(001)

    Science.gov (United States)

    González-González, A.; Alonso, M.; Navarro, E.; Sacedón, J. L.; Ruiz, A.

    2010-12-01

    The formation of nanometer-scale islands is an important issue for bottom-up-based schemes in novel electronic, optoelectronic and magnetoelectronic devices technology. In this work, we present a detailed atomic force microscopy analysis of Si island arrays grown by molecular beam epitaxy. Recent reports have shown that self-assembled distributions of fourfold pyramid-like islands develop in 5-nm thick Si layers grown at substrate temperatures of 650 and 750°C on HF-prepared Si(001) substrates. Looking for wielding control and understanding the phenomena involved in this surface nanostructuring, we develop and apply a formalism that allows for processing large area AFM topographic images in a shot, obtaining surface orientation maps with specific information on facets population. The procedure reveals some noticeable features of these Si island arrays, e.g. a clear anisotropy of the in-plane local slope distributions. Total island volume analysis also indicates mass transport from the substrate surface to the 3D islands, a process presumably related to the presence of trenches around some of the pyramids. Results are discussed within the framework of similar island arrays in homoepitaxial and heteroepitaxial semiconductor systems.

  1. Laser annealing of sputter-deposited -SiC and -SiCN films

    Indian Academy of Sciences (India)

    M A Fraga; M Massi; I C Oliveira; F D Origo; W Miyakawa

    2011-12-01

    This work describes the laser annealing of -SiC and -SiCN films deposited on (100) Si and quartz substrates by RF magnetron sputtering. Two samples of -SiCN thin films were produced under different N2/Ar flow ratios. Rutherford backscattering spectroscopy (RBS), Raman analysis and Fourier transform infrared spectrometry (FTIR) techniques were used to investigate the composition and bonding structure of as-deposited and laser annealed SiC and SiCN films.

  2. Investigation of an a-Si/c-Si interface on a c-Si(P) substrate by simulation

    Institute of Scientific and Technical Information of China (English)

    Wang Jianqiang; Gao Hua; Zhang Jian; Meng Fanying; Ye Qinghao

    2012-01-01

    We investigate the recombination mechanism in an a-Si/c-Si interface,and analyze the key factors that influence the interface passivation quality,such as Qs,δp/δn and Dit.The polarity of the dielectric film is very important to the illustration level dependent passivation quality; when nδn =pδp and the defect level Et equal to Ei (c-Si),the defect states are the most effective recombination center,AFORS-HET simulation and analysis indicate that emitter doping and a-Si/c-Si band offset modulation are effective in depleting or accumulating one charged carrier.Interface states (Dit) severely deteriorate Voc compared with Jsc for a-Si/c-Si HJ cell performance when Dit is over 1 × 1010 cm-2.eV-1.For a c-Si(P)/a-Si(P+) structure,ΦBSF in c-Si and Φo in a-Si have different performances in optimization contact resistance and c-Si(P)/a-Si(P+) interface recombination.

  3. WSi2/Si Multilayer Sectioning by Reactive Ion Etching for Multilayer Laue Lens Fabrication

    Energy Technology Data Exchange (ETDEWEB)

    Bouet, N.; Conley, R.; Biancarosaa, J.; Divanc, R.; Macrander, A. T.

    2010-08-01

    SPIE Conference paper/talk presentation: Introduction: Reactive ion etching (RIE) has been employed in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive x-ray optics with a large investment put towards the development of deep RIE. Due to the intrinsic differing chemistries related to reactivity, ion bombardment, and passivation of materials, the development of recipes for new materials or material systems can require intense effort and resources. For silicon in particular, methods have been developed to provide reliable anisotropic profiles with good dimensional control and high aspect ratios1,2,3, high etch rates, and excellent material to mask etch selectivity...

  4. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  5. Microscopic and macroscopic characterization of the charging effects in SiC/Si nanocrystals/SiC sandwiched structures.

    Science.gov (United States)

    Xu, Jie; Xu, Jun; Wang, Yuefei; Cao, Yunqing; Li, Wei; Yu, Linwei; Chen, Kunji

    2014-02-07

    Microscopic charge injection into the SiC/Si nanocrystals/SiC sandwiched structures through a biased conductive AFM tip is subsequently characterized by both electrostatic force microscopy and Kelvin probe force microscopy (KPFM). The charge injection and retention characteristics are found to be affected by not only the band offset at the Si nanocrystals/SiC interface but also the doping type of the Si substrate. On the other hand, capacitance-voltage (C-V) measurements investigate the macroscopic charging effect of the sandwiched structures with a thicker SiC capping layer, where the charges are injected from the Si substrates. The calculated macroscopic charging density is 3-4 times that of the microscopic one, and the possible reason is the underestimation of the microscopic charging density caused by the averaging effect and detection delay in the KPFM measurements.

  6. Three carbon pairs in Si

    Energy Technology Data Exchange (ETDEWEB)

    Docaj, A. [Physics Department, Texas Tech University, Lubbock, TX 79409-1051 (United States); Estreicher, S.K., E-mail: Stefan.Estreicher@ttu.edu [Physics Department, Texas Tech University, Lubbock, TX 79409-1051 (United States)

    2012-08-01

    Carbon impurities in Si are common in floating-zone and cast-Si materials. The simplest and most discussed carbon complex is the interstitial-substitutional C{sub i}C{sub s} pair, which readily forms when self-interstitials are present in the material. This pair has three possible configurations, each of which is electrically active. The less common C{sub s}C{sub s} pair has been studied in irradiated material but has also recently been seen in as-grown C-rich cast-Si, which is commonly used to fabricate solar cells. The third pair consists of two interstitial C atoms: C{sub i}C{sub i}. Although its formation probability is low for several reasons, the C{sub i}C{sub i} pair is very stable and electrically inactive. In this contribution, we report preliminary results of first-principles calculations of these three C pairs in Si. The structures, binding energies, vibrational spectra, and electrical activity are predicted.

  7. Using SI Units in Astronomy

    Science.gov (United States)

    Dodd, Richard

    2011-12-01

    1. Introduction; 2. An introduction to SI units; 3. Dimensional analysis; 4. Unit of angular measure (radian); 5. Unit of time (second); 6. Unit of length (metre); 7. Unit of mass (kilogram); 8. Unit of luminous intensity (candela); 9. Unit of thermodynamic temperature (kelvin); 10. Unit of electric current (ampere); 11. Unit of amount of substance (mole); 12. Astronomical taxonomy; Index.

  8. The impact resistance of SiC and other mechanical properties of SiC and Si3N4

    Science.gov (United States)

    Bradt, R. C.

    1984-01-01

    Studies focused on the impact and mechanical behavior of SiC and Si3N4 at high temperatures are summarized. Instrumented Charpy impact testing is analyzed by a compliance method and related to strength; slow crack growth is related to processing, and creep is discussed. The transient nature of flaw populations during oxidation under load is emphasized for both SiC and Si3N4.

  9. The HFIR 14J irradiation SiC/SiC composite and SiC fiber collaboration

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Kohyama, Akira; Katoh, Yutai [Kyoto Univ., Uji, Kyoto (Japan); Hasegawa, Akira [Tohoku Univ., Aramaki, Sendai (Japan); Snead, L. [Oak Ridge National Lab., TN (United States); Scholz, R.

    1998-09-01

    A short introduction with references establishes the current status of research and development of SiC{sub f}/SiC composites for fusion energy systems with respect to several key issues. The SiC fiber and composite specimen types selected for the JUPITER 14J irradiation experiment are presented together with the rationale for their selection.

  10. Effect of Ti and Si interlayer materials on the joining of SiC ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Yang Il; Park, Jung Hwan; Kim, Hyun Gil; Park, Dong Jun; Park, Jeong Yong; Kim, Weon Ju [LWR Fuel Technology Division, Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2016-08-15

    SiC-based ceramic composites are currently being considered for use in fuel cladding tubes in light-water reactors. The joining of SiC ceramics in a hermetic seal is required for the development of ceramic-based fuel cladding tubes. In this study, SiC monoliths were diffusion bonded using a Ti foil interlayer and additional Si powder. In the joining process, a very low uniaxial pressure of ∼0.1 MPa was applied, so the process is applicable for joining thin-walled long tubes. The joining strength depended strongly on the type of SiC material. Reaction-bonded SiC (RB-SiC) showed a higher joining strength than sintered SiC because the diffusion reaction of Si was promoted in the former. The joining strength of sintered SiC was increased by the addition of Si at the Ti interlayer to play the role of the free Si in RB-SiC. The maximum joint strength obtained under torsional stress was ∼100 MPa. The joint interface consisted of TiSi{sub 2}, Ti{sub 3}SiC{sub 2}, and SiC phases formed by a diffusion reaction of Ti and Si.

  11. Superior solid solubility of MnSiO3 in CaSiO3 perovskite

    Science.gov (United States)

    Li, Lin; Nagai, Takaya; Seto, Yusuke; Fujino, Kiyoshi; Kawano, Jun; Itoh, Shoich

    2015-02-01

    The silicate perovskite phase relation between CaSiO3 and MnSiO3 was investigated at 35-52 GPa and at 1,800 K using laser-heated diamond anvil cells combined with angle-dispersive synchrotron X-ray diffraction and energy-dispersive X-ray spectroscopic chemical analyses with scanning or transmission electron microscopy. We found that MnSiO3 can be incorporated into CaSiO3 perovskite up to 55, and 20 mol % of CaSiO3 is soluble in MnSiO3 perovskite. The range of 55-80 mol % of MnSiO3 in the CaSiO3-MnSiO3 perovskite system could be immiscible. We also observed that the two perovskite structured phases of the Mn-bearing CaSiO3 and the Ca-bearing MnSiO3 coexisted at these conditions. The Mn-bearing CaSiO3 perovskite has non-cubic symmetry and the Ca-bearing MnSiO3 perovskite has an orthorhombic structure with space group Pbnm. All the perovskite structured phases in the CaSiO3-MnSiO3 system convert to the amorphous phase during pressure release. MnSiO3 is the first chemical component confirmed to show such a superior solid solubility in CaSiO3 perovskite.

  12. Effective passivation of Si surfaces by plasma deposited SiOx/a-SiNx:H stacks

    Science.gov (United States)

    Dingemans, G.; Mandoc, M. M.; Bordihn, S.; van de Sanden, M. C. M.; Kessels, W. M. M.

    2011-05-01

    Very low surface recombination velocities field-effect passivation was absent for a reference stack comprising thermally grown SiO2. The results indicate that hydrogenation of interface states played a key role in the passivation and remained effective up to annealing temperatures >800 °C.

  13. An inside job for siRNAs.

    Science.gov (United States)

    Golden, Daniel E; Gerbasi, Vincent R; Sontheimer, Erik J

    2008-08-08

    Among the three main categories of small silencing RNAs in insects and mammals-siRNAs, miRNAs, and piRNAs-siRNAs were thought to arise primarily from exogenous sources, whereas miRNAs and piRNAs arise from endogenous loci. Recent work in flies and mice reveals several classes of endogenous siRNAs (endo-siRNAs) that contribute to functions previously reserved for miRNAs and piRNAs, including gene regulation and transposon suppression.

  14. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I. [FM Technologies, Inc., Fairfax, VA (United States); Black, W.M. [George Mason Univ., Fairfax, VA (United States)] [and others

    1995-05-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on optimization of time-temperature profiles, production of SiC from chemical precursors, and design of new applicators for joining of long tubes.

  15. An introduction to the New SI

    CERN Document Server

    Knotts, Sandra; Phillips, William D

    2015-01-01

    Plans are underway to redefine the International System of Units (SI) around 2018. The New SI specifies the values of certain physical constants to define units. This article explains the New SI in a way that could be used to present it to high-school physics classes.

  16. Emission efficiency limit of Si nanocrystals

    NARCIS (Netherlands)

    Limpens, R.; Luxembourg, S.L.; Weeber, A.W.; Gregorkiewicz, T.

    2016-01-01

    One of the important obstacles on the way to application of Si nanocrystals for development of practical devices is their typically low emissivity. In this study we explore the limits of external quantum yield of photoluminescence of solid-state dispersions of Si nanocrystals in SiO2. By making use

  17. 3C-SiC nanocrystal growth on 10° miscut Si(001) surface

    Energy Technology Data Exchange (ETDEWEB)

    Deokar, Geetanjali, E-mail: gitudeo@gmail.com [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); D' Angelo, Marie; Demaille, Dominique [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Cavellin, Catherine Deville [INSP, UPMC, CNRS UMR 7588, 4 place Jussieu, Paris F-75005 (France); Faculté des Sciences et Technologie UPEC, 61 av. De Gaulle, Créteil F-94010 (France)

    2014-04-01

    The growth of 3C-SiC nano-crystal (NC) on 10° miscut Si(001) substrate by CO{sub 2} thermal treatment is investigated by scanning and high resolution transmission electron microscopies. The vicinal Si(001) surface was thermally oxidized prior to the annealing at 1100 °C under CO{sub 2} atmosphere. The influence of the atomic steps at the vicinal SiO{sub 2}/Si interface on the SiC NC growth is studied by comparison with the results obtained for fundamental Si(001) substrates in the same conditions. For Si miscut substrate, a substantial enhancement in the density of the SiC NCs and a tendency of preferential alignment of them along the atomic step edges is observed. The SiC/Si interface is abrupt, without any steps and epitaxial growth with full relaxation of 3C-SiC occurs by domain matching epitaxy. The CO{sub 2} pressure and annealing time effect on NC growth is analyzed. The as-prepared SiC NCs can be engineered further for potential application in optoelectronic devices and/or as a seed for homoepitaxial SiC or heteroepitaxial GaN film growth. - Highlights: • Synthesis of 3C-SiC nanocrystals epitaxied on miscut-Si using a simple technique • Evidence of domain matching epitaxy at the SiC/Si interface • SiC growth proceeds along the (001) plane of host Si. • Substantial enhancement of the SiC nanocrystal density due to the miscut • Effect of the process parameters (CO{sub 2} pressure and annealing duration)

  18. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the

  19. Microstructure and wear studies of laser clad Al-Si/SiC(p) composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Colaco, R.; Vilar, R.; Ocelik, V.; De Hosson, J. Th. M.

    2007-01-01

    Coatings of a composite material consisting of an Al-Si matrix reinforced with SiC particles were produced by laser cladding on UNS A03560 cast Al-alloy substrates from mixtures of powders of Al-12 wt.% Si alloy and SiC. The influence of the processing parameters on the microstructure and abrasive

  20. Ultrasound assisted siRNA delivery using PEG-siPlex loaded microbubbles.

    Science.gov (United States)

    Vandenbroucke, Roosmarijn E; Lentacker, Ine; Demeester, Joseph; De Smedt, Stefaan C; Sanders, Niek N

    2008-03-20

    Short interfering RNA (siRNA) attracts much attention for the treatment of various diseases. However, its delivery, especially via systemic routes, remains a challenge. Indeed, naked siRNAs are rapidly degraded, while complexed siRNAs massively aggregate in the blood or are captured by macrophages. Although this can be circumvented by PEGylation, we found that PEGylation had a strong negative effect on the gene silencing efficiency of siRNA-liposome complexes (siPlexes). Recently, ultrasound combined with microbubbles has been used to deliver naked siRNA but the gene silencing efficiency is rather low and very high amounts of siRNA are required. To overcome the negative effects of PEGylation and to enhance the efficiency of ultrasound assisted siRNA delivery, we coupled PEGylated siPlexes (PEG-siPlexes) to microbubbles. Ultrasound radiation of these microbubbles resulted in massive release of unaltered PEG-siPlexes. Interestingly, PEG-siPlexes loaded on microbubbles were able to enter cells after exposure to ultrasound, in contrast to free PEG-siPlexes, which were not able to enter cells rapidly. Furthermore, these PEG-siPlex loaded microbubbles induced, in the presence of ultrasound, much higher gene silencing than free PEG-siPlexes. Additionally, the PEG-siPlex loaded microbubbles only silenced the expression of genes in the presence of ultrasound, which allows space and time controlled gene silencing.

  1. Microstructure and wear studies of laser clad Al-Si/SiC(p) composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Colaco, R.; Vilar, R.; Ocelik, V.; De Hosson, J. Th. M.

    2007-01-01

    Coatings of a composite material consisting of an Al-Si matrix reinforced with SiC particles were produced by laser cladding on UNS A03560 cast Al-alloy substrates from mixtures of powders of Al-12 wt.% Si alloy and SiC. The influence of the processing parameters on the microstructure and abrasive w

  2. Laser cladding of Al-Si/SiC composite coatings : Microstructure and abrasive wear behavior

    NARCIS (Netherlands)

    Anandkumar, R.; Almeida, A.; Vilar, R.; Ocelik, V.; De Hosson, J.Th.M.

    2007-01-01

    Surface coatings of an Al-Si-SiC composite were produced on UNS A03560 cast Al-alloy substrates by laser cladding using a mixture of powders of Al-12 wt.% Si alloy and SiC. The microstructure of the coatings depends considerably on the processing parameters. For a specific energy of 26 MJ/m2 the mic

  3. SiO adsorption on a p(2 × 2) reconstructed Si(1 0 0) surface

    NARCIS (Netherlands)

    Violanda, M.; Rudolph, H.

    2009-01-01

    We have investigated the adsorption mechanism of SiO molecule incident on a clean Si(1 0 0) p(2 × 2) reconstructed surface using density functional theory based methods. Stable adsorption geometries of SiO on Si surface, as well as their corresponding activation and adsorption energies are identifie

  4. MoSi2 oxidation resistance coatings for Mo5Si3/MoSi2 composites

    Institute of Scientific and Technical Information of China (English)

    YAN Jianhui; XU Hongmei; ZHANG Houan; TANG Siwen

    2009-01-01

    In order to improve the oxidation resistance properties of 30 at.% Mo5Si3/MoSi2 composite at high temperature in air, a molybdenum disili-tide coating was prepared on its surface by a molten salt technology. XRD and SEM analysis showed that only tetragonal MoSi2 phase ex-isted in the coating after being siliconized for 5 h at 900℃. The oxidation film formed on the uncoated sample was not dense, so that oxygen diffused easily through it. The volatilization of MoO3 resulted in the oxidation film separating from the substrate. The MoSi2coating was proved to be an effective method to prevent 30 at.% MosSi3/MoSi2 composites from being oxidized at 1200℃. A dense glassy SiO2 film was formed on the MoSi2 coating surface, which acted as a barrier layer for the diffusion of oxygen atoms to the substrate. The 30at.% Mo5Si3/MoSi2 composites with a MoSi2 coating showed much better oxidation resistance at high temperature.

  5. Abrupt GaP/Si hetero-interface using bistepped Si buffer

    Energy Technology Data Exchange (ETDEWEB)

    Ping Wang, Y., E-mail: yanping.wang@insa-rennes.fr; Kuyyalil, J.; Nguyen Thanh, T.; Almosni, S.; Bernard, R.; Tremblay, R.; Da Silva, M.; Létoublon, A.; Rohel, T.; Tavernier, K.; Le Corre, A.; Cornet, C.; Durand, O. [UMR FOTON, CNRS, INSA Rennes, Rennes F-35708 (France); Stodolna, J.; Ponchet, A. [CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, BP 94347, 31055 Toulouse Cedex 04 (France); Bahri, M.; Largeau, L.; Patriarche, G. [Laboratoire de Photonique et Nanostructures, CNRS UPR 20, Route de Nozay, Marcoussis 91460 (France); Magen, C. [LMA, INA-ARAID, and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza (Spain)

    2015-11-09

    We evidence the influence of the quality of the starting Si surface on the III-V/Si interface abruptness and on the formation of defects during the growth of III-V/Si heterogeneous crystal, using high resolution transmission electron microscopy and scanning transmission electron microscopy. GaP layers were grown by molecular beam epitaxy on vicinal Si (001). The strong effect of the Si substrate chemical preparation is first demonstrated by studying structural properties of both Si homoepitaxial layer and GaP/Si heterostructure. It is then shown that choosing adequate chemical preparation conditions and subsequent III-V regrowth conditions enables the quasi-suppression of micro-twins in the epilayer. Finally, the abruptness of GaP/Si interface is found to be very sensitive to the Si chemical preparation and is improved by the use of a bistepped Si buffer prior to III-V overgrowth.

  6. Columnar growth of CoSi2 on Si(111), Si(100) and Si(110) by molecular beam epitaxy

    Science.gov (United States)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Codeposition of silicon and cobalt on heated silicon substrates in ratios several times the silicide stoichiometry is found to result in epitaxial columns of CoSi2 surrounded by a matrix of epitaxial silicon. For (111)-oriented wafers, nearly cylindrical columns are formed, where both columns and surrounding silicon are defect free, as deduced from transmission electron microscopy. Independent control of the column diameter and separation is possible, and diameters of 27-135 nm have been demonstrated.

  7. Si Scott溜冰鞋

    Institute of Scientific and Technical Information of China (English)

    2010-01-01

    Vauxhall Ice Skate公司特别邀请Si Scott为Vauxhall Ice Skate event活动设计了一款造型奇特的溜冰鞋:鞋身以轿车模样出现下面则是冰刀,再加上设计师的非凡创意涂鸦,令溜冰鞋充满童趣。

  8. Nanoporosity of Si (100) bars

    Science.gov (United States)

    Novikov, S. N.; Timoshenkov, S. P.; Minaev, V. S.; Goryunova, E. P.; Gerasimenko, N. N.; Smirnov, D. I.

    2016-09-01

    Si(100) samples cut from a typical bar (100 mm in diameter) prepared using industrial technology are studied. Measurements of the electron work function (EWF) show that the size effects in these samples (a reduction in thickness along with a sample's area and the EWF) detected earlier were due to nanostructure porosity that was buried by the technological treatment of a bar's surface. This hidden nanoporosity is assumed to be a manifestation of the secondary crystal structure.

  9. Lattice dislocation in Si nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Omar, M.S., E-mail: dr_m_s_omar@yahoo.co [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq); Taha, H.T. [Department of Physics, College of Science, University of Salahaddin, Arbil, Iraqi Kurdistan (Iraq)

    2009-12-15

    Modified formulas were used to calculate lattice thermal expansion, specific heat and Bulk modulus for Si nanowires with diameters of 115, 56, 37 and 22 nm. From these values and Gruneisen parameter taken from reference, mean lattice volumes were found to be as 20.03 A{sup 3} for the bulk and 23.63, 29.91, 34.69 and 40.46 A{sup 3} for Si nanowire diameters mentioned above, respectively. Their mean bonding length was calculated to be as 0.235 nm for the bulk and 0.248, 0.269, 0.282 and 0.297 nm for the nanowires diameter mentioned above, respectively. By dividing the nanowires diameter on the mean bonding length, number of layers per each nanowire size was found to be as 230, 104, 65 and 37 for the diameters mentioned above, respectively. Lattice dislocations in 22 nm diameter wire were found to be from 0.00324 nm for the 1st central lattice to 0.2579 nm for the last surface lattice. Such dislocation was smaller for larger wire diameters. Dislocation concentration found to change in Si nanowires according to the proportionalities of surface thickness to nanowire radius ratios.

  10. Current–voltage studies on -FeSi2/Si heterojunction

    Indian Academy of Sciences (India)

    A Datta; S Kal; S Basu

    2000-08-01

    – characteristics of both -FeSi2/n-Si and -FeSi2/p-Si were studied at room temperature. The junctions were formed by depositing Fe on Si selectively followed by thermal annealing and some samples were later treated by pulsed laser. Temperature of thermal annealing and diode area were also varied. – studies on all these samples were done and ideality factors were computed. Results obtained were interpreted.

  11. Effect of Si interface surface roughness to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor

    Energy Technology Data Exchange (ETDEWEB)

    Hasanah, Lilik, E-mail: lilikhasanah@upi.edu; Suhendi, Endi; Tayubi, Yuyu Rahmat; Yuwono, Heru [Department of Physics Education, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Nandiyanto, Asep Bayu Dani [Department Kimia, Universitas Pendidikan Indonesia, Jl. Setiabudhi 229 Bandung 40154 (Indonesia); Murakami, Hideki [Graduate School of Advanced Sciences of Matter, Hiroshima University, Higashi-Hiroshima 739-8527 (Japan); Khairrurijal [Physics of Electronic Materials Research Division, Institut Teknologi Bandung, Bandung 40132 (Indonesia)

    2016-02-08

    In this work we discuss the surface roughness of Si interface impact to the tunneling current of the Si/Si{sub 1-x}Ge{sub x}/Si heterojunction bipolar transistor. The Si interface surface roughness can be analyzed from electrical characteristics through the transversal electron velocity obtained as fitting parameter factor. The results showed that surface roughness increase as Ge content of virtual substrate increase This model can be used to investigate the effect of Ge content of the virtual substrate to the interface surface condition through current-voltage characteristic.

  12. Active Oxidation of SiC

    Science.gov (United States)

    Jacobson, Nathan S.; Myers,Dwight L.; Harder, Bryan J.

    2011-01-01

    The high temperature oxidation of silicon carbide occurs in either a passive or active mode, depending on temperature and oxygen potential. Passive oxidation forms a protective oxide film which limits attack of the SiC:SiC(s) + 3/2 O2(g) = SiO2(s) + CO(g.) Active oxidation forms a volatile oxide and leads to extensive attack of the SiC: SiC(s) + O2(g) = SiO(g) + CO(g). The transition points and rates of active oxidation are a major issue. Previous studies are reviewed and the leading theories of passive/active transitions summarized. Comparisons are made to the active/passive transitions in pure Si, which are relatively well-understood. Critical questions remain about the difference between the active-to-passive transition and passive-to-active transition. For Si, Wagner [2] points out that the active-to-passive transition is governed by the criterion for a stable Si/SiO2 equilibria and the passive-to-active transition is governed by the decomposition of the SiO2 film. This suggests a significant oxygen potential difference between these two transitions and our experiments confirm this. For Si, the initial stages of active oxidation are characterized by the formation of SiO(g) and further oxidation to SiO2(s) as micron-sized rods, with a distinctive morphology. SiC shows significant differences. The active-to-passive and the passive-to-active transitions are close. The SiO2 rods only appear as the passive film breaks down. These differences are explained in terms of the reactions at the SiC/SiO2 interface. In order to understand the breakdown of the passive film, pre-oxidation experiments are conducted. These involve forming dense protective scales of 0.5, 1, and 2 microns and then subjecting the samples with these scales to a known active oxidation environment. Microstructural studies show that SiC/SiO2 interfacial reactions lead to a breakdown of the scale with a distinct morphology.

  13. Complexation of Si in Hydrothermal Systems

    Institute of Scientific and Technical Information of China (English)

    樊文苓; 王声远; 田弋夫; 陈紫新

    2001-01-01

    The Au-SiO2 and Sn-SiO2 complexes have been experimentally calibrated at varying temperature, silica concentration and pH:Au+ + H3SiO4-=AuH3SiO4 lgK = - 1. 65436 + 9611.21/TSn4 + + 4H3SiO4-=Sn(H3SiO4)4 lgK200℃ = 42.73Compared with Au-Cl, Au-HS and Sn-OH complexes, AuH3SiO4 and Sn(H3SiO4)4 complexes can be recognized as the dominant transport forms in Si-bearing solutions under pH and Eh con ditions of general interest. The decrease of SiO2 concentration and oxygen fugacity would re verse the direction of dissolution-complexing reactions, resulting in the precipitation of gold and silica, as well as cassiterite and silica. This study illustrates the significance of SiO2-complexa tion in hydrothermal solutions for gold, tin and other metallizations.

  14. Comparison of the thermal stabilities of NiSi films in Ni/Si, Ni/Pd/Si and Ni/Pt/Si systems

    CERN Document Server

    Wang, R N

    2003-01-01

    The effects of different interlayer materials (Pd and Pt) deposited between Ni films and Si substrates on the NiSi thermal stability are discussed. Ni sub 0 sub . sub 9 sub 4 sub 3 Pd sub 0 sub . sub 0 sub 5 sub 7 Si and Ni sub 0 sub . sub 9 sub 4 sub 5 Pt sub 0 sub . sub 0 sub 5 sub 5 Si solid solutions were formed when the samples were annealed at high temperatures and the lattice parameters of Ni sub 0 sub . sub 9 sub 4 sub 3 Pd sub 0 sub . sub 0 sub 5 sub 7 Si were calculated according to Vegard's law. The NiSi thermal stability was enhanced by interposing a Pd or Pt interlayer, and the sample with the Pt interlayer had the highest NiSi thermal stability among all the samples studied. This is attributed to the reduction of the interface energy between NiSi and Si substrates and the decrease of the driving force for the nucleation of NiSi sub 2 , induced by formation of the NiSi(200) preferred orientation and the solid solution respectively.

  15. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Liu Jian

    2009-01-01

    Full Text Available Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  16. Theoretic Study on Band Structure of Si/SiNx Multilayer Film%Si/SiNx多层膜能带结构的理论研究

    Institute of Scientific and Technical Information of China (English)

    徐明; 魏屹; 何贤模; 芦伟

    2010-01-01

    利用Kronig-Penney模型计算了Si/SiNx多层膜结构中Si亚层的能带结构.结果表明,无论是减少Si或Si/SiNx亚层的厚度都将导致Si层的带隙发生宽化,计算结果与实验值符合较好.进而还发现,当Si层厚度减小时,Si/SiNx多层膜结构中载流子(电子和空穴)的有效质量均减小,有利于对载流子复合发光的控制.计算结果对实验上研究发光可控的Si/SiNx多层膜结构有重要指导意义.

  17. Differential cross sections measurement of 28Si(p,p/γ)28Si and 29Si(p,p/γ)29Si reactions for PIGE applications

    Science.gov (United States)

    Jokar, A.; Kakuee, O.; Lamehi-Rachti, M.

    2016-03-01

    Differential cross sections for gamma-ray emission from the 28Si(p,p/γ)28Si (Eγ = 1779 keV) and the 29Si(p,p/γ)29Si (Eγ = 1273 keV) nuclear reactions were measured in the energy range of 2.0-3.2 MeV and 2.0-3.0 MeV, respectively. The thin Si targets were prepared by evaporating natural SiO onto self-supporting Ag films. The gamma-rays and backscattered protons were detected simultaneously. An HPGe detector placed at an angle of 90° with respect to beam direction was employed to collect gamma-rays while an ion implanted Si detector placed at a scattering angle of 165° was used to detect backscattered protons. The great advantage of this work is that differential cross sections were obtained with a procedure irrespective of absolute value of the collected beam charge.

  18. Enhancement of the Si p-n diode NIR photoresponse by embedding [beta]-FeSi2 nanocrystallites

    National Research Council Canada - National Science Library

    A V Shevlyagin; D L Goroshko; E A Chusovitin; K N Galkin; N G Galkin; A K Gutakovskii

    2015-01-01

    ...+ -Si/p-Si/β-FeSi2 nanocrystallites/n-Si(111) diode structure was fabricated. Transmission electron microscopy data confirmed a well-defined multilayered structure with embedded nanocrystallites of two typical sizes...

  19. Deformation effects in the 28Si + 12C and 28Si + 28Si reactions

    Indian Academy of Sciences (India)

    C Bhattacharya; M Rousseau; C Beck; V Rauch; R M Freeman; R Nouicer; F Haas; O Dorvaux; K Eddahbi; P Papka; O Stezwski; S Szilner; D Mahboub; A Szanto De Toledo; A Hachem; E Martin; S J Sanders

    2001-07-01

    The possible occurrence of highly deformed configurations is investigated in the 40Ca and 56Ni di-nuclear systems as formed in the 28Si + 12C, 28Si reactions by using the properties of emitted light charged particles. Inclusive as well as exclusive data of the heavy fragments and their associated light charged particles have been collected by using the ICARE charged particle multidetector array. The data are analysed by Monte Carlo CASCADE statistical-model calculations using a consistent set of parameters with spin-dependent level densities. Significant deformation effects at high spin are observed as well as an unexpected large 8Be cluster emission of a binary nature.

  20. Corrosion properties of amorphous Mo-Si-N and nanolayered Mo-Si-Nn/SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Torri, P.; Mahiout, A.; Koskinen, J.; Hirvonen, J.P.; Johansson, L.S.

    2000-02-01

    Corrosion properties of sputter deposited MoSi{sub 2}, SiC, Mo-Si-N (MoSi{sub 2.2}N{sub 2.5}) and nanolayered Mo-Si-N/SiC coatings on Fe37 low carbon steel have been studied using electrochemical polarization measurements in 1 N H{sub 2}SO{sub 4} solution. A decrease in both critical current density for passivation and minimum current in passive state was observed in annealed nanolayered Mo-Si-N/SiC coating compared to each of its constituents alone as single layer coating. On contrary to MoSi{sub 2} coating, only slight increase in critical current density was observed in Mo-Si-N coated sample after annealing. Molybdenum disilicide source material has good thermal and electrical conductivity, which allows effective dc-magnetron sputter deposition. Therefore this is a relatively simple method to produce amorphous coatings which have a high crystallization temperature and promising properties for corrosion applications.

  1. An Isotope Study of Hydrogenation of poly-Si/SiOx Passivated Contacts for Si Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Schnabel, Manuel; Nemeth, William; van de Loo, Bas, W.H.; Macco, Bart; Kessels, Wilhelmus, M.M.; Stradins, Paul; Young, David, L.

    2017-06-26

    For many years, the record Si solar cell efficiency stood at 25.0%. Only recently have several companies and institutes managed to produce more efficient cells, using passivated contacts of made doped poly-Si or a-Si:H and a passivating intrinsic interlayer in all cases. Common to these designs is the need to passivate the layer stack with hydrogen. In this contribution, we perform a systematic study of passivated contact passivation by hydrogen, using poly-Si/SiOx passivated contacts on n-Cz-Si, and ALD Al2O3 followed by a forming gas anneal (FGA) as the hydrogen source. We study p-type and n-type passivated contacts with implied Voc exceeding 690 and 720 mV, respectively, and perform either the ALD step or the FGA with deuterium instead of hydrogen in order to separate the two processes via SIMS. By examining the deuterium concentration at the SiOx in both types of samples, we demonstrate that the FGA supplies negligible hydrogen species to the SiOx, regardless of whether the FGA is hydrogenated or deuterated. Instead, it supplies the thermal energy needed for hydrogen species in the Al2O3 to diffuse there. Furthermore, the concentration of hydrogen species at the SiOx can saturate while implied Voc continues to increase, showing that the energy from the FGA is also required for hydrogen species already at the SiOx to find recombination-active defects to passivate.

  2. GeSn/Si Avalanche Photodetectors on Si substrates

    Science.gov (United States)

    2016-09-16

    Photodetectors on Si substrates Report Title In this project, firstly, the material growth of GeSn by chemical vapor deposition (CVD) system has been...between GeSn and other market dominating IR detectors in short-IR wavelength (First time reported the D* of a GeSn detector in the world). The D* of...Standard Form 298 (Rev 8/98) Prescribed by ANSI Std. Z39.18 Final Report W911NF-13-1-0196 64461-EL-DRP.43 479-575-7265 a. REPORT 14. ABSTRACT 16

  3. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  4. Three-dimensional crossbar arrays of self-rectifying Si/SiO2/Si memristors

    Science.gov (United States)

    Li, Can; Han, Lili; Jiang, Hao; Jang, Moon-Hyung; Lin, Peng; Wu, Qing; Barnell, Mark; Yang, J. Joshua; Xin, Huolin L.; Xia, Qiangfei

    2017-06-01

    Memristors are promising building blocks for the next-generation memory and neuromorphic computing systems. Most memristors use materials that are incompatible with the silicon dominant complementary metal-oxide-semiconductor technology, and require external selectors in order for large memristor arrays to function properly. Here we demonstrate a fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays. With a p-Si/SiO2/n-Si structure, our memristor exhibits repeatable unipolar resistance switching behaviour (105 rectifying ratio, 104 ON/OFF) and excellent retention at 300 °C. We further build three-dimensinal crossbar arrays (up to five layers of 100 nm memristors) using fluid-supported silicon membranes, and experimentally confirm the successful suppression of both intra- and inter-layer sneak path currents through the built-in diodes. The current work opens up opportunities for low-cost mass production of three-dimensional memristor arrays on large silicon and flexible substrates without increasing circuit complexity.

  5. High-efficiency si/polymer hybrid solar cells based on synergistic surface texturing of Si nanowires on pyramids.

    Science.gov (United States)

    He, Lining; Lai, Donny; Wang, Hao; Jiang, Changyun; Rusli

    2012-06-11

    An efficient Si/PEDOT:PSS hybrid solar cell using synergistic surface texturing of Si nanowires (SiNWs) on pyramids is demonstrated. A power conversion efficiency (PCE) of 9.9% is achieved from the cells using the SiNW/pyramid binary structure, which is much higher than similar cells based on planar Si, pyramid-textured Si, and SiNWs. The PCE is the highest reported to-date for hybrid cells based on Si nanostructures and PEDOT.

  6. Simulation analysis of the effects of a back surface field on a p-a-Si:H/n-c-Si/n+-a-Si:H heterojunction solar cell

    Institute of Scientific and Technical Information of China (English)

    Hu Yuehui; Zhang Xiangwen; Qu Minghao; Wang Lifu; Zeng Tao; Xie Yaojiang

    2009-01-01

    In order to investigate the effects of a back surface field (BSF) on the performance of a p-doped amorphous silicon (p-a-Si:H)/n-doped crystalline silicon (n-c-Si) solar cell, a heterojunction solar cell with a p-a-Si:H/nc-Si/n+-a-Si:H structure was designed. An n+-a-Si:H film was deposited on the back of an n-c-Si wafer as the BSF.The photovoltaic performance of p-a-Si:H/n-c-Si/n+-a-Si:H solar cells were simulated. It was shown that the BSF of the p-a-Si:H/n-c-Si/n+-a-Si:H solar cells could effectively inhibit the decrease of the cell performance caused by interface states.

  7. High-performance a -Si/c-Si heterojunction photoelectrodes for photoelectrochemical oxygen and hydrogen evolution

    KAUST Repository

    Wang, Hsin Ping

    2015-05-13

    Amorphous Si (a-Si)/crystalline Si (c-Si) heterojunction (SiHJ) can serve as highly efficient and robust photoelectrodes for solar fuel generation. Low carrier recombination in the photoelectrodes leads to high photocurrents and photovoltages. The SiHJ was designed and fabricated into both photoanode and photocathode with high oxygen and hydrogen evolution efficiency, respectively, by simply coating of a thin layer of catalytic materials. The SiHJ photoanode with sol-gel NiOx as the catalyst shows a current density of 21.48 mA/cm2 at the equilibrium water oxidation potential. The SiHJ photocathode with 2 nm sputter-coated Pt catalyst displays excellent hydrogen evolution performance with an onset potential of 0.640 V and a solar to hydrogen conversion efficiency of 13.26%, which is the highest ever reported for Si-based photocathodes. © 2015 American Chemical Society.

  8. Microstructures and Properties of Ti-Coated SiCp Reinforced Al-Si Alloy Composites

    Science.gov (United States)

    Feng, Yan; Ren, Junpeng; Dong, Cuige; Wang, Richu

    2016-12-01

    A double-layer structure of Ti coating was plated on the surface of SiC particles using a diffusion method in a vacuum reactor, which is a new method to fabricate a Ti-coating layer on the SiC particles. The phase structure of Ti coating on the surface of SiC particles was composed inside of Ti5Si3 and outside of TiC investigated by x-ray diffraction. The Ti5Si3 and TiC double-layer structure realizes the tight chemical bonding between SiC particles and the Ti coating, and significantly promotes the wettability between the aluminum matrix and the Ti-coated SiC particles. The Ti-coated SiCp-reinforced Al-Si composites are prepared by a powder metallurgy method, and express excellent relative densities, desirable mechanical properties and frictional wear resistance.

  9. Phase transformation in SiOx/SiO₂ multilayers for optoelectronics and microelectronics applications.

    Science.gov (United States)

    Roussel, M; Talbot, E; Pratibha Nalini, R; Gourbilleau, F; Pareige, P

    2013-09-01

    Due to the quantum confinement, silicon nanoclusters (Si-ncs) embedded in a dielectric matrix are of prime interest for new optoelectronics and microelectronics applications. In this context, SiO(x)/SiO₂ multilayers have been prepared by magnetron sputtering and subsequently annealed to induce phase separation and Si clusters growth. The aim of this paper is to study phase separation processes and formation of nanoclusters in SiO(x)/SiO₂ multilayers by atom probe tomography. Influences of the silicon supersaturation, annealing temperature and SiO(x) and SiO₂ layer thicknesses on the final microstructure have been investigated. It is shown that supersaturation directly determines phase separation regime between nucleation/classical growth and spinodal decomposition. Annealing temperature controls size of the particles and interface with the surrounding matrix. Layer thicknesses directly control Si-nc shapes from spherical to spinodal-like structures.

  10. Propagation of misfit dislocations from buffer/Si interface into Si

    Science.gov (United States)

    Liliental-Weber, Zuzanna [El Sobrante, CA; Maltez, Rogerio Luis [Porto Alegre, BR; Morkoc, Hadis [Richmond, VA; Xie, Jinqiao [Raleigh, VA

    2011-08-30

    Misfit dislocations are redirected from the buffer/Si interface and propagated to the Si substrate due to the formation of bubbles in the substrate. The buffer layer growth process is generally a thermal process that also accomplishes annealing of the Si substrate so that bubbles of the implanted ion species are formed in the Si at an appropriate distance from the buffer/Si interface so that the bubbles will not migrate to the Si surface during annealing, but are close enough to the interface so that a strain field around the bubbles will be sensed by dislocations at the buffer/Si interface and dislocations are attracted by the strain field caused by the bubbles and move into the Si substrate instead of into the buffer epi-layer. Fabrication of improved integrated devices based on GaN and Si, such as continuous wave (CW) lasers and light emitting diodes, at reduced cost is thereby enabled.

  11. From Si wafers to cheap and efficient Si electrodes for Li-ion batteries

    Science.gov (United States)

    Gauthier, Magali; Reyter, David; Mazouzi, Driss; Moreau, Philippe; Guyomard, Dominique; Lestriez, Bernard; Roué, Lionel

    2014-06-01

    High-energy ball milling is used to recycle Si wafers to produce Si powders for negative electrodes of Li-ion batteries. The resulting Si powder consists in micrometric Si agglomerates made of cold-welded submicrometric nanocrystalline Si particles. Silicon-based composite electrodes prepared with ball-milled Si wafer can achieve more than 900 cycles with a capacity of 1200 mAh g-1 of Si (880 mAh g-1 of electrode) and a coulombic efficiency higher than 99%. This excellent electrochemical performance lies in the use of nanostructured Si produced by ball milling, the electrode formulation in a pH 3 buffer solution with CMC as binder and the use of FEC/VC additives in the electrolyte. This work opens the way to an economically attractive recycling of Si wastes.

  12. Fusion of Si28+Si28,30: Different trends at sub-barrier energies

    Science.gov (United States)

    Montagnoli, G.; Stefanini, A. M.; Esbensen, H.; Jiang, C. L.; Corradi, L.; Courtin, S.; Fioretto, E.; Grebosz, J.; Haas, F.; Jia, H. M.; Mazzocco, M.; Michelagnoli, C.; Mijatović, T.; Montanari, D.; Parascandolo, C.; Scarlassara, F.; Strano, E.; Szilner, S.; Torresi, D.

    2014-10-01

    Background: The fusion excitation function of the system Si28+Si28 at energies near and below the Coulomb barrier is known only down to ≃15 mb. This precludes any information on both coupling effects on sub-barrier cross sections and the possible appearance of hindrance. For Si28+Si30 even if the fusion cross section is measured down to ≃50 μb, the evidence of hindrance is marginal. Both systems have positive fusion Q values. While Si28 has a deformed oblate shape, Si30 is spherical. Purpose: We investigate 1. the possible influence of the different structure of the two Si isotopes on the fusion excitation functions in the deep sub-barrier region and 2. whether hindrance exists in the Si+Si systems and whether it is strong enough to generate an S-factor maximum, thus allowing a comparison with lighter heavy-ion systems of astrophysical interest. Methods: Si28 beams from the XTU Tandem accelerator of the INFN Laboratori Nazionali di Legnaro were used. The setup was based on an electrostatic beam separator, and fusion evaporation residues (ER) were detected at very forward angles. Angular distributions of ER were measured. Results: Fusion cross sections of Si28+Si28 have been obtained down to ≃600 nb. The slope of the excitation function has a clear irregularity below the barrier, but no indication of a S-factor maximum is found. For Si28+Si30 the previous data have been confirmed and two smaller cross sections have been measured down to ≃4 μb. The trend of the S-factor reinforces the previous weak evidence of hindrance. Conclusions: The sub-barrier cross sections for Si28+Si28 are overestimated by coupled-channels calculations based on a standard Woods-Saxon potential, except for the lowest energies. Calculations using the M3Y+repulsion potential are adjusted to fit the Si28+Si28 and the existing Si30+Si30 data. An additional weak imaginary potential (probably simulating the effect of the oblate Si28 deformation) is required to fit the low-energy trend of

  13. Electrical Performance of Electron Irradiated SiGe HBT and Si BJT

    Institute of Scientific and Technical Information of China (English)

    Wentao HUANG; Jilin WANG; Zhinong LIU; Peiyi CHEN; Peihsin TSIEN; Xiangti MENG

    2004-01-01

    The change of electrical performances of 1 MeV electron irradiated silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) and Si bipolar junction transistor (BJT) was studied. After electron irradiation, both the collector current IC and the base current IB changed a little, and the current gainβ decreased a little for SiGe HBT. The higher the electron irradiation fluence was, the lower the IC decreased. For conventional Si BJT, IC and IB increased as well asβ decreased much larger than SiGe HBT under the same fluence. The contribution of IB was more important to the degradation ofβ for both SiGeHBT and Si BJT. It was shown that SiGe HBT had a larger anti-radiation threshold and better anti-radiation performance than Si BJT. The mechanism of electrical performance changes induced by irradiation was preliminarily discussed.

  14. Nonisovalent Si-III-V and Si-II-VI alloys: Covalent, ionic, and mixed phases

    Energy Technology Data Exchange (ETDEWEB)

    Kang, Joongoo; Park, Ji-Sang; Stradins, Pauls; Wei, Su-Huai

    2017-07-01

    Nonequilibrium growth of Si-III-V or Si-II-VI alloys is a promising approach to obtaining optically more active Si-based materials. We propose a new class of nonisovalent Si2AlP (or Si2ZnS) alloys in which the Al-P (or Zn-S) atomic chains are as densely packed as possible in the host Si matrix. As a hybrid of the lattice-matched parent phases, Si2AlP (or Si2ZnS) provides an ideal material system with tunable local chemical orders around Si atoms within the same composition and structural motif. Here, using first-principles hybrid functional calculations, we discuss how the local chemical orders affect the electronic and optical properties of the nonisovalent alloys.

  15. Study of indentation induced cracks in MoSi2-reaction bonded SiC ceramics

    Indian Academy of Sciences (India)

    O P Chakrabarti; P K Das; S Mondal

    2001-04-01

    MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a density > 92% of the theoretical density (TD) and microstructurally contained SiC, MoSi2, residual Si and unreacted C. The material was tested for indentation fracture toughness at room temperature with a Vicker’s indenter and KIC was found to be 4.42 MPa√m which is around 39% higher than the conventional RBSC material. Enhancement in indentation fracture toughness is explained in terms of bowing of propagating cracks through MoSi2/SiC interface which is under high thermal stress arising from the thermal expansion mismatch between MoSi2 and SiC.

  16. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  17. Fabrication and characterization of Ti3SiC2–SiC nanocomposite by in situ reaction synthesis of TiC/Si/Al powders

    Indian Academy of Sciences (India)

    Baoyan Liang; Mingzhi Wang; Xiaopu Li; Yunchao Mu

    2011-12-01

    The microstructure and mechanical properties of Ti3SiC2–SiC nanocomposite fabricated by in situ hot pressing (HP) synthesis process were studied. The results show that dense Ti3SiC2–SiC composite contained minor TiSi2 obtained by hot sintering at 1350°C for 1 h. The average grain size of Ti3SiC2 was 4 m in length, and the size of SiC grains is about 100 nm. With its fine microstructure, the Ti3SiC2–SiC nanocomposite shows good mechanical properties.

  18. Si3N4/SiC nanocomposite powder from a preceramic polymeric network based on poly(methylsilane as the SiC precursor

    Directory of Open Access Journals (Sweden)

    Maurício F. Gozzi

    2001-01-01

    Full Text Available Si3N4/SiC nanocomposite powders were obtained from a preceramic polymeric network based on poly(methylsilane as the in situ quasi-stoichiometric SiC source. These powders were constituted of nanosized SiC particles homogeneously distributed in the Si3N4 particulate matrix. beta-SiC whiskers were grown at 1400 °C in the pores of the matrix. At 1600 °C, the alpha -> beta Si3N4 phase transition took place, but no elemental silicon from Si3N4 decomposition was detected, evidencing the protective effect of the SiC phase.

  19. Interfacial stability of CoSi2/Si structures grown by molecular beam epitaxy

    Science.gov (United States)

    George, T.; Fathauer, R. W.

    1992-01-01

    The stability of CoSi2/Si interfaces was examined in this study using columnar silicide structures grown on (111) Si substrates. In the first set of experiments, Co and Si were codeposited using MBE at 800 C and the resulting columnar silicide layer was capped by epitaxial Si. Deposition of Co on the surface of the Si capping layer at 800 C results in the growth of the buried silicide columns. The buried columns grow by subsurface diffusion of the deposited Co, suppressing the formation of surface islands of CoSi2. The column sidewalls appear to be less stable than the top and bottom interfaces, resulting in preferential lateral growth and ultimately in the coalescence of the columns to form a continuous buried CoSi2 layer. In the second set of experiments, annealing of a 250 nm-thick buried columnar layer at 1000 C under a 100 nm-thick Si capping layer results in the formation of a surface layer of CoSi2 with a reduction in the sizes of the CoSi2 columns. For a sample having a thicker Si capping layer the annealing leads to Ostwald ripening producing buried equiaxed columns. The high CoSi2/Si interfacial strain could provide the driving force for the observed behavior of the buried columns under high-temperature annealing.

  20. Photoluminescence and structural properties of Si/SiC core–shell nanowires growth by HWCVD

    Energy Technology Data Exchange (ETDEWEB)

    Nazarudin, Nur Fatin Farhanah Binti; Mohd Noor, Nurul Jannah Binti; Rahman, Saadah Abdul; Goh, Boon Tong, E-mail: boontong77@yahoo.com

    2015-01-15

    Si/SiC core–shell nanowires grown by hot-wire chemical vapor deposition were studied. Ni nanoparticles act as metal nano-templates to catalyze the growth of these core–shell nanowires. These nanowires were grown at different deposition pressures of 0.5 and 1 mbar. The nanowires showed a tapered-like morphology at deposition pressure 0.5 mbar. Increase in pressure to 1 mbar leads to a formation of agglomerated grains at the root of the nanowires. The results show that these nanowires consisted of crystalline Si core and amorphous SiC shell nanowires. Increase in pressure enhanced the formation of SiC phase in the shell of the nanowires. On the other hand, the formation of the agglomerated grains attributed to an increasing of the SiC phase at higher deposition pressure. The presence of Si and SiC nano-crystallites embedded within an amorphous matrix exhibited a room temperature PL emission in the range of 400–1000 nm. The effects of the deposition pressure on the optical and structural properties of the nanowires are also discussed. - Highlights: • Growth of Si/SiC core–shell nanowires by HWCVD. • The nanowires consisted of crystalline Si core and amorphous SiC shell. • Metal nano-templates catalyzed the growth of Si core nanowires. • Increase in deposition pressure enhanced the SiC phase. • The presence of nano-crystallites exhibited a room temperature PL.

  1. Resonance Raman mapping as a tool to monitor and manipulate Si nanocrystals in Si-SiO{sub 2} nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Rani, Ekta; Ingale, Alka A., E-mail: alka@rrcat.gov.in [Laser Physics Applications Section, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Chaturvedi, A. [Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Joshi, M. P.; Kukreja, L. M. [Homi Bhabha National Institute, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India); Laser Material Processing Division, Raja Ramanna Centre for Advanced Technology, Indore-452013 (India)

    2015-10-19

    Specially designed laser heating experiment along with Raman mapping on Si-SiO{sub 2} nanocomposites elucidates the contribution of core and surface/interface in the intermediate frequency range (511–514 cm{sup −1}) Si phonons. The contribution of core to surface/interface increases with the size of Si nanocrystal, which itself increases on laser irradiation. Further, it is found that resonance Raman is crucial to the observance of surface/interface phonons and wavelength dependent Raman mapping can be corroborated with band edges observed in absorption spectra. This understanding can be gainfully used to manipulate and characterize Si-SiO{sub 2} nanocomposite, simultaneously for photovoltaic device applications.

  2. Airborne Emissions from Si/FeSi Production

    Science.gov (United States)

    Kero, Ida; Grådahl, Svend; Tranell, Gabriella

    2017-02-01

    The management of airborne emissions from silicon and ferrosilicon production is, in many ways, similar to the management of airborne emissions from other metallurgical industries, but certain challenges are highly branch-specific, for example the dust types generated and the management of NO X emissions by furnace design and operation. A major difficulty in the mission to reduce emissions is that information about emission types and sources as well as abatement and measurement methods is often scarce, incomplete and scattered. The sheer diversity and complexity of the subject presents a hurdle, especially for new professionals in the field. This article focuses on the airborne emissions from Si and FeSi production, including greenhouse gases, nitrogen oxides, airborne particulate matter also known as dust, polyaromatic hydrocarbons and heavy metals. The aim is to summarize current knowledge in a state-of-the-art overview intended to introduce fresh industry engineers and academic researchers to the technological aspects relevant to the reduction of airborne emissions.

  3. Impact Resistance of Uncoated SiC/SiC Composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Choi, Sung R.; Cosgriff, Laura M.; Fox, Dennis S.; Lee, Kang N.

    2008-01-01

    Two-dimensional woven SiC/SiC composites fabricated by melt infiltration method were impact tested at room temperature and at 1316 C in air using 1.59-mm diameter steel-ball projectiles at velocities ranging from 115 to 400 m/s. The extent of substrate damage with increasing projectile velocity was imaged and analyzed using optical and scanning electron microscopy, and non-destructive evaluation (NDE) methods such as pulsed thermography, and computed tomography. The impacted specimens were tensile tested at room temperature to determine their residual mechanical properties. Results indicate that at 115 m/s projectile velocity, the composite showed no noticeable surface or internal damage and retained its as-fabricated mechanical properties. As the projectile velocity increased above this value, the internal damage increased and mechanical properties degraded: At velocities >300 m/s, the projectile penetrated through the composite, but the composite retained approx.50% of the ultimate tensile strength of the as-fabricated composite and exhibited non-brittle failure. Predominant internal damages are delamination of fiber plies, fiber fracture and matrix shearing.

  4. Airborne Emissions from Si/FeSi Production

    Science.gov (United States)

    Kero, Ida; Grådahl, Svend; Tranell, Gabriella

    2016-10-01

    The management of airborne emissions from silicon and ferrosilicon production is, in many ways, similar to the management of airborne emissions from other metallurgical industries, but certain challenges are highly branch-specific, for example the dust types generated and the management of NO X emissions by furnace design and operation. A major difficulty in the mission to reduce emissions is that information about emission types and sources as well as abatement and measurement methods is often scarce, incomplete and scattered. The sheer diversity and complexity of the subject presents a hurdle, especially for new professionals in the field. This article focuses on the airborne emissions from Si and FeSi production, including greenhouse gases, nitrogen oxides, airborne particulate matter also known as dust, polyaromatic hydrocarbons and heavy metals. The aim is to summarize current knowledge in a state-of-the-art overview intended to introduce fresh industry engineers and academic researchers to the technological aspects relevant to the reduction of airborne emissions.

  5. Evaluation of photovoltaic properties of nanocrystalline-FeSi2/Si heterojunctions

    Science.gov (United States)

    Shaban, Mahmoud; Bayoumi, Amr M.; Farouk, Doaa; Saleh, Mohamed B.; Yoshitake, Tsuyoshi

    2016-09-01

    In this paper, an application of nanocrystalline iron disilicide (NC-FeSi2) combined with nanocrystalline-Si (NC-Si) in a heterostructured solar cell is introduced and numerically evaluated in detail. The proposed cell structure is studied based on an experimental investigation of photovoltaic properties of NC-FeSi2/crystalline-Si heterojunctions, composed of unintentionally-doped NC-FeSi2 thin film grown on Si substrate. Photoresponse measurement of NC-FeSi2/crystalline-Si heterojunction confirmed ability of NC-FeSi2 to absorb NIR light and to generate photocarriers. However, collection of these carriers was not so efficient and a radical improvement in design of the device is required. Therefore, a modified device structure, comprising of NC-FeSi2 layer sandwiched between two heavily-doped p- and n-type NC-Si, is suggested and numerically evaluated. Simulation results showed that the proposed structure would exhibit a relatively high conversion efficiency of 25%, due to an improvement in collection efficiency of photogenerated carriers in the NC-FeSi2 and NC-Si layers. To attain such efficiency, defect densities in NC-FeSi2 and NC-Si layers should be kept less than 1014 and 1016 cm-3 eV-1, respectively. Remarkable optical and electrical properties of NC-FeSi2, employed in the proposed structure, facilitate improving device quantum efficiency spectrum providing significant spectrum extension into the near-infrared region beyond Si bandgap.

  6. In-Plane Si Nanowire Growth Mechanism in Absence of External Si Flux.

    Science.gov (United States)

    Curiotto, Stefano; Leroy, Frédéric; Cheynis, Fabien; Müller, Pierre

    2015-07-01

    We report on a new mechanism of nanowire formation: during Au deposition on Si(110) substrates, Au-Si droplets grow, move spontaneously, and fabricate a Si nanowire behind them in the absence of Si external flux. Nanowires are formed by Si dissolved from the substrate at the advancing front of the droplets and transported backward to the crystallization front. The droplet shape is determined by the Si etching anisotropy. The nanowire formation can be tuned by changing experimental parameters like substrate temperature and Au deposition rate.

  7. Si/SiO2/p-Si结构的电学特性

    Institute of Scientific and Technical Information of China (English)

    马自军; 马书懿

    2008-01-01

    用射频磁控溅射法在p-Si衬底上制备了Si/SiO2薄膜,利用Au/(Si/SiO2)/p-Si结构的I-V特性曲线对其电学特性进行了分析.结果表明,样品具有很好的整流作用,起整流作用的势垒存在于(Si/SiO2)/p-Si界面附近.

  8. Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

    Institute of Scientific and Technical Information of China (English)

    XIA Zheng-Yue; HAN Pei-Gao; XU Jun; CHEN De-Yuan; WEI De-Yuan; MA Zhong-Yuan; CHEN Kun-Ji; XU Ling; HUANG Xin-Fan

    2007-01-01

    Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures.The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.

  9. 非晶硅/晶体硅(a-Si/c-Si)异质结%Property Investigation of a-Si/c-Si Hetero-Junction Structure

    Institute of Scientific and Technical Information of China (English)

    汪建强; 高华; 张剑; 张松; 李晨; 叶庆好; 孟凡英

    2011-01-01

    通过对非晶硅/晶体硅(a-Si/c-Si)异质结能带不连续、发射结掺杂以及界面态密度进行分析,研究它们对a-Si/c-Si异质结的界面特性,以及a-Si(N+)/c-Si(P)结构电池性能的影响.研究发现,能带不连续以及a-Si发射结高掺杂有利于实现界面复合机制由以悬挂键复合主导的复合机制向由少数载流子复合占主导的SRH(Shockly-Read-Hall)复合机制转变,有效降低界面复合速率.AFORS-HET软件模拟显示:在c-Si(P)衬底掺杂浓度为1.6×1016cm-3时,a-Si(N+)发射结掺杂浓度大于1.5×1020cm-3是获得高电池效率的必要条件;与短路电流密度相比,开路电压受a-Si/c-Si界面态密度影响更明显.%T his paper investigated the influence ot a-hi/c-bi band ottset, amorphous silicon emitter doping concentration and interface defects density on interface property of a-Si/c-Si structure. Band offset in a-Si(N+ )/c-Si(P) hetero-junction and a-Si emitter high level doping is very useful for the transformation of recombination mechanism from dangling bond to SRH (Shockly-Read-Hall). AFORS-HET simulation indicates that a-Si(N+ ) emitter doping level of over 1. 5X1020 cm~3 on c-Si(P) is an indispensable condition for achieving high efficiency. Comparing with density of short circuit current, open circuit voltage of a-Si/c-Si structure cell is much more susceptible to interface defect density.

  10. Epitaxy of Si1- x C x via ultrahigh-vacuum chemical vapor deposition using Si2H6, Si3H8, or Si4H10 as Si precursors

    Science.gov (United States)

    Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

    2017-09-01

    In this study, disilane (Si2H6), trisilane (Si3H8), and tetrasilane (Si4H10) were used as Si precursors for the growth of Si1- x C x epilayers, and the growth properties of the layers were compared. The use of a higher-order silane significantly increased the growth rates of the Si1- x C x epilayers at a processing temperature of 650 °C. In addition, a higher growth rate realized by using a higher-order silane promoted an increase in the substitutional carbon concentration in the Si1- x C x epilayers owing to the additional injection of a C-source gas (SiH3CH3) and the incorporation of C atoms into substitutional sites. The differences in growth properties between Si precursors were explained on the basis of reaction mechanisms.

  11. Magnetron-sputter epitaxy of {beta}-FeSi{sub 2}(220)/Si(111) and {beta}-FeSi{sub 2}(431)/Si(001) thin films at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Liu Hongfei; Tan Chengcheh; Chi Dongzhi [Institute of Materials Research and Engineering (IMRE), A-STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602 (Singapore)

    2012-07-15

    {beta}-FeSi{sub 2} thin films have been grown on Si(111) and Si(001) substrates by magnetron-sputter epitaxy at 700 Degree-Sign C. On Si(111), the growth is consistent with the commonly observed orientation of [001]{beta}-FeSi{sub 2}(220)//[1-10]Si(111) having three variants, in-plane rotated 120 Degree-Sign with respect to one another. However, on Si(001), under the same growth conditions, the growth is dominated by [-111]{beta}-FeSi{sub 2}(431)//[110]Si(001) with four variants, which is hitherto unknown for growing {beta}-FeSi{sub 2}. Photoelectron spectra reveal negligible differences in the valance-band and Fe2p core-level between {beta}-FeSi{sub 2} grown on Si(111) and Si(001) but an apparent increased Si-oxidization on the surface of {beta}-FeSi{sub 2}/Si(001). This phenomenon is discussed and attributed to the Si-surface termination effect, which also suggests that the Si/Fe ratio on the surface of {beta}-FeSi{sub 2}(431)/Si(001) is larger than that on the surface of {beta}-FeSi{sub 2}(220)/Si(111).

  12. SiC nanowires: material and devices

    Science.gov (United States)

    Zekentes, K.; Rogdakis, K.

    2011-04-01

    SiC nanowires are of high interest since they combine the physical properties of SiC with those induced by their low dimensionality. For this reason, a large number of scientific studies have been dedicated to their fabrication and characterization as well as to their application in devices. SiC nanowires' growth involving different growth mechanisms and configurations was the main theme for the large majority of these studies. Various physical characterization methods have been employed for evaluating SiC nanowire quality. SiC nanowires with narrow-diameter (channel material. On the other hand, the grown nanowires are suitable for field-emission applications and to be used as reinforcing material in composite structures as well as for increasing the hydrophobicity of Si surfaces. All these aspects are examined in detail in different sections of this paper.

  13. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures.

    Science.gov (United States)

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-12-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree (ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  14. Polarization memory effect in the photoluminescence of nc-Si-SiOx light-emitting structures

    Science.gov (United States)

    Michailovska, Katerina; Indutnyi, Ivan; Shepeliavyi, Petro; Sopinskyy, Mykola

    2016-06-01

    The polarization memory (PM) effect in the photoluminescence (PL) of the porous nc-Si-SiOx light-emitting structures, containing nanoparticles of silicon (nc-Si) in the oxide matrix and passivated in a solution of hydrofluoric acid (HF), has been investigated. The studied nc-Si-SiOx structures were produced by evaporation of Si monoxide (SiO) powder in vacuum and oblique deposition on Si wafer, and then the deposited silicon oxide (SiOx) films were annealed in the vacuum at 975 °C to grow nc-Si. It was found that the PM effect in the PL is observed only after passivation of nanostructures: during etching in HF solution, the initial symmetric nc-Si becomes asymmetric elongated. It was also found that in investigated nanostructures, there is a defined orientational dependence of the PL polarization degree ( ρ) in the sample plane which correlates with the orientation of SiOx nanocolumns, forming the structure of the porous layer. The increase of the ρ values in the long-wavelength spectral range with time of HF treatment can be associated with increasing of the anisotropy of large Si nanoparticles. The PM effect for this spectral interval can be described by the dielectric model. In the short-wavelength spectral range, the dependence of the ρ values agrees qualitatively with the quantum confinement effect.

  15. Study on in-situ Mg2Si/Al-Si composites with different compositions

    Institute of Scientific and Technical Information of China (English)

    Jing Qingxiu; Zhang Caixia; Huang Xiaodong

    2009-01-01

    Effects of chemical composition and heat treatment on microstructures and mechanical properties of in-situ Mg2Si/Al-Si composites were investigated. It was found that, in the microstructure of an Al-5.7wt% Mg2Si composite with 8.2wt% extra Si, the binary eutectic Mg2Si locates at the grain boundaries with an undeveloped Chinese script-like morphology, and the primary α-Al is formed into a cell structure due to the selective modification effect of the modifiers of mischmetal and Strontium salt; whereas in the composite with a near Al-Mg2Si eutectic composition and little extra Si content, the intercrescence eutectic Mg2Si formed with the binary eutectic a-Al grows into integrated Chinese script-like shape. As Si content increases, the eutectic Mg2Si dendrite becomes coarser in morphology but less in volum e fraction. Hardness and tensile strength of the cast Mg2Si/Al-Si composites do not increase with increasing of Mg content, but they are related to the size and morphology of the eutectic and primary Mg2Si phases. Heat treatment with optimal parameters is an effective way to improve the properties of the in-situ composites.

  16. siRNA的应用

    Institute of Scientific and Technical Information of China (English)

    孟立根; 马清河; 王安忠; 秦俊文

    2004-01-01

    RNAi(RNA interference,RNA阻断)当初是在研究绦虫C elegans时观测到的一种现象。当将双链的RNA(double stranded RNA;dsRNA)导人体内后,与这种双链RNA相同性较高的mRNA将被特异性地抑制或者消除。除了绦虫之外,RNAi已被作为一种研究基因功能的有效工具,广泛运用于植物、真菌、线虫、果蝇以及哺乳动物,并获得了好的效果。近来使用短链(21~23碱基对)siRNA(short interfering RNA)也获得了同样的效果。siRNA与传统RNA干涉技术相比具有极大的优越

  17. SiLix-C Nanocomposites

    Science.gov (United States)

    Henry, Francois

    2015-01-01

    For this Phase II project, Superior Graphite Co., in collaboration with the Georgia Institute of Technology and Streamline Nanotechnologies, Inc., developed, explored the properties of, and demonstrated the enhanced capabilities of novel nanostructured SiLix-C anodes. These anodes can retain high capacity at a rapid 2-hour discharge rate and at 0 C when used in Li-ion batteries. In Phase I, these advanced anode materials had specific capacity in excess of 1,000 mAh/g, minimal irreversible capacity losses, and stable performance for 20 cycles at C/1. The goals in Phase II were to develop and apply a variety of novel nanomaterials, fine-tune the properties of composite particles at the nanoscale, optimize the composition of the anodes, and select appropriate binder and electrolytes. In order to achieve a breakthrough in power characteristics of Li-ion batteries, the team developed new nanostructured SiLix-C anode materials to offer up to 1,200 mAh/g at C/2 at 0 C.

  18. Chemical compatibility issues associated with use of SiC/SiC in advanced reactor concepts

    Energy Technology Data Exchange (ETDEWEB)

    Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-09-01

    Silicon carbide/silicon carbide (SiC/SiC) composites are of interest for components that will experience high radiation fields in the High Temperature Gas Cooled Reactor (HTGR), the Very High Temperature Reactor (VHTR), the Sodium Fast Reactor (SFR), or the Fluoride-cooled High-temperature Reactor (FHR). In all of the reactor systems considered, reactions of SiC/SiC composites with the constituents of the coolant determine suitability of materials of construction. The material of interest is nuclear grade SiC/SiC composites, which consist of a SiC matrix [high-purity, chemical vapor deposition (CVD) SiC or liquid phase-sintered SiC that is crystalline beta-phase SiC containing small amounts of alumina-yttria impurity], a pyrolytic carbon interphase, and somewhat impure yet crystalline beta-phase SiC fibers. The interphase and fiber components may or may not be exposed, at least initially, to the reactor coolant. The chemical compatibility of SiC/SiC composites in the three reactor environments is highly dependent on thermodynamic stability with the pure coolant, and on reactions with impurities present in the environment including any ingress of oxygen and moisture. In general, there is a dearth of information on the performance of SiC in these environments. While there is little to no excess Si present in the new SiC/SiC composites, the reaction of Si with O2 cannot be ignored, especially for the FHR, in which environment the product, SiO2, can be readily removed by the fluoride salt. In all systems, reaction of the carbon interphase layer with oxygen is possible especially under abnormal conditions such as loss of coolant (resulting in increased temperature), and air and/ or steam ingress. A global outline of an approach to resolving SiC/SiC chemical compatibility concerns with the environments of the three reactors is presented along with ideas to quickly determine the baseline compatibility performance of SiC/SiC.

  19. Graphene/Si-nanowire heterostructure molecular sensors

    Science.gov (United States)

    Kim, Jungkil; Oh, Si Duk; Kim, Ju Hwan; Shin, Dong Hee; Kim, Sung; Choi, Suk-Ho

    2014-06-01

    Wafer-scale graphene/Si-nanowire (Si-NW) array heterostructures for molecular sensing have been fabricated by vertically contacting single-layer graphene with high-density Si NWs. Graphene is grown in large scale by chemical vapour deposition and Si NWs are vertically aligned by metal-assisted chemical etching of Si wafer. Graphene plays a key role in preventing tips of vertical Si NWs from being bundled, thereby making Si NWs stand on Si wafer separately from each other under graphene, a critical structural feature for the uniform Schottky-type junction between Si NWs and graphene. The molecular sensors respond very sensitively to gas molecules by showing 37 and 1280% resistance changes within 3.5/0.15 and 12/0.15 s response/recovery times under O2 and H2 exposures in air, respectively, highest performances ever reported. These results together with the sensor responses in vacuum are discussed based on the surface-transfer doping mechanism.

  20. Si isotope homogeneity of the solar nebula

    Energy Technology Data Exchange (ETDEWEB)

    Pringle, Emily A.; Savage, Paul S.; Moynier, Frédéric [Department of Earth and Planetary Sciences and McDonnell Center for the Space Sciences, Washington University in St. Louis, One Brookings Drive, St. Louis, MO 63130 (United States); Jackson, Matthew G. [Department of Earth Science, University of California, Santa Barbara, CA 93109 (United States); Barrat, Jean-Alix, E-mail: eapringle@wustl.edu, E-mail: savage@levee.wustl.edu, E-mail: pringle@ipgp.fr, E-mail: moynier@ipgp.fr, E-mail: jackson@geol.ucsb.edu, E-mail: Jean-Alix.Barrat@univ-brest.fr [Université Européenne de Bretagne, Université de Brest, CNRS UMR 6538 (Domaines Océaniques), I.U.E.M., Place Nicolas Copernic, F-29280 Plouzané Cedex (France)

    2013-12-20

    The presence or absence of variations in the mass-independent abundances of Si isotopes in bulk meteorites provides important clues concerning the evolution of the early solar system. No Si isotopic anomalies have been found within the level of analytical precision of 15 ppm in {sup 29}Si/{sup 28}Si across a wide range of inner solar system materials, including terrestrial basalts, chondrites, and achondrites. A possible exception is the angrites, which may exhibit small excesses of {sup 29}Si. However, the general absence of anomalies suggests that primitive meteorites and differentiated planetesimals formed in a reservoir that was isotopically homogenous with respect to Si. Furthermore, the lack of resolvable anomalies in the calcium-aluminum-rich inclusion measured here suggests that any nucleosynthetic anomalies in Si isotopes were erased through mixing in the solar nebula prior to the formation of refractory solids. The homogeneity exhibited by Si isotopes may have implications for the distribution of Mg isotopes in the solar nebula. Based on supernova nucleosynthetic yield calculations, the expected magnitude of heavy-isotope overabundance is larger for Si than for Mg, suggesting that any potential Mg heterogeneity, if present, exists below the 15 ppm level.

  1. The Si/Si_3N4 Interface and Si/Si_3N4 Submicron Mesa: A Multi-million Atom Molecular Dynamics Study

    Science.gov (United States)

    Bachlechner, Martina E.; Omeltchenko, Andrey; Nakano, Aiichiro; Kalia, Rajiv K.; Vashishta, Priya; Ebbsjö, Ingvar; Madhukar, Anupam

    1998-03-01

    Using molecular dynamics simulations on parallel computers, the interface structure, stress distribution, crack propagation and fracture in a Si_3N4 film on Si substrate are studied. Bulk Si is described by Stillinger-Weber potential and Si_3N4 is represented by a combination of two- and three-body covalent interactions. At the interface, the charge transfer is taken from LCAO electronic structure calculations (G.-L. Zhao and M.E. Bachlechner, Europhys. Lett. 36, 287 (1997)). Results for structural correlations at the interface and 3D stress distribution for the submicron mesa are presented.

  2. SiD Letter of Intent

    Energy Technology Data Exchange (ETDEWEB)

    Aihara, H., (Ed.); Burrows, P., (Ed.); Oreglia, M., (Ed.); Berger, E.L.; Guarino, V.; Repond, J.; Weerts, H.; Xia, L.; Zhang, J.; /Argonne, HEP; Zhang, Q.; /Argonne, HEP /Beijing, Inst. High Energy Phys.; Srivastava, A.; /Birla Inst. Tech. Sci.; Butler, J.M.; /Boston U.; Goldstein, Joel; Velthuis, J.; /Bristol U.; Radeka, V.; /Brookhaven; Zhu, R.-Y.; /Caltech.; Lutz, P.; /DAPNIA, Saclay; de Roeck, A.; Elsener, K.; Gaddi, A.; Gerwig, H.; /CERN /Cornell U., LNS /Ewha Women' s U., Seoul /Fermilab /Gent U. /Darmstadt, GSI /Imperial Coll., London /Barcelona, Inst. Microelectron. /KLTE-ATOMKI /Valencia U., IFIC /Cantabria Inst. of Phys. /Louis Pasteur U., Strasbourg I /Durham U., IPPP /Kansas State U. /Kyungpook Natl. U. /Annecy, LAPP /LLNL, Livermore /Louisiana Tech. U. /Paris U., VI-VII /Paris U., VI-VII /Munich, Max Planck Inst. /MIT, LNS /Chicago, CBC /Moscow State U. /Nanjing U. /Northern Illinois U. /Obninsk State Nucl. Eng. U. /Paris U., VI-VII /Strasbourg, IPHC /Prague, Inst. Phys. /Princeton U. /Purdue U. /Rutherford /SLAC /SUNY, Stony Brook /Barcelona U. /Bonn U. /UC, Davis /UC, Santa Cruz /Chicago U. /Colorado U. /Delhi U. /Hawaii U. /Helsinki U. /Indiana U. /Iowa U. /Massachusetts U., Amherst /Melbourne U. /Michigan U. /Minnesota U. /Mississippi U. /Montenegro U. /New Mexico U. /Notre Dame U. /Oregon U. /Oxford U. /Ramon Llull U., Barcelona /Rochester U. /Santiago de Compostela U., IGFAE /Hefei, CUST /Texas U., Arlington /Texas U., Dallas /Tokyo U. /Washington U., Seattle /Wisconsin U., Madison /Wayne State U. /Yale U. /Yonsei U.

    2012-04-11

    This document presents the current status of the Silicon Detector (SiD) effort to develop an optimized design for an experiment at the International Linear Collider. It presents detailed discussions of each of SiD's various subsystems, an overview of the full GEANT4 description of SiD, the status of newly developed tracking and calorimeter reconstruction algorithms, studies of subsystem performance based on these tools, results of physics benchmarking analyses, an estimate of the cost of the detector, and an assessment of the detector R and D needed to provide the technical basis for an optimised SiD.

  3. Si3N4-SiC材料的氧化性能研究%Study on Oxidation Performance of Si3N4-SiC

    Institute of Scientific and Technical Information of China (English)

    李杰

    2009-01-01

    通过对不同Si3N4含量、不同温度下Si3N4-SiC材料的氧化实验,分析氧化后的氧化增重率,得出Si3N4含量越高,材料氧化越严重;氧化温度越高,材料氧化越严重;且氧化增重率与氧化时间呈直线-抛物线规律.

  4. One-dimensional Si nanolines in hydrogenated Si(001)

    Science.gov (United States)

    François, Bianco; Köster, Sigrun A.; Owen, James G. H.; Renner, Christoph; Bowler, David R.

    2012-02-01

    We present a detailed study of the structural and electronic properties of a self-assembled silicon nanoline embedded in the H-terminated silicon (001) surface, known as the Haiku stripe. The nanoline is a perfectly straight and defect free endotaxial structure of huge aspect ratio; it can grow micrometre long at a constant width of exactly four Si dimers (1.54 nm). Another remarkable property is its capacity to be exposed to air without suffering any degradation. The nanoline grows independently of any step edges at tunable densities, from isolated nanolines to a dense array of nanolines. In addition to these unique structural characteristics, scanning tunnelling microscopy and density functional theory reveal a one-dimensional state confined along the Haiku core. This nanoline is a promising candidate for the long sought after electronic solid-state one-dimensional model system to explore the fascinating quantum properties emerging in such reduced dimensionality. Phys. Rev. B, 84, 035328 (2011)

  5. Thermogravimetric and microscopic analysis of SiC/SiC materials with advanced interfaces

    Energy Technology Data Exchange (ETDEWEB)

    Windisch, C.F. Jr.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States); Snead, L.L. [Oak Ridge National Lab., TN (United States)

    1997-04-01

    The chemical stability of SiC/SiC composites with fiber/matrix interfaces consisting of multilayers of SiC/SiC and porous SiC have been evaluated using a thermal gravimetric analyzer (TGA). Previous evaluations of SiC/SiC composites with carbon interfacial layers demonstrated the layers are not chemically stable at goal use temperatures of 800-1100{degrees}C and O{sub 2} concentrations greater than about 1 ppm. No measureable mass change was observed for multilayer and porous SiC interfaces at 800-1100{degrees}C and O{sub 2} concentrations of 100 ppm to air; however, the total amount of oxidizable carbon is on the order of the sensitivity of the TGA. Further studies are in progress to evaluate the stability of these materials.

  6. Nature of visible luminescence of co-sputtered Si-SiO{sub x} systems

    Energy Technology Data Exchange (ETDEWEB)

    Torchynska, T.; Becerril Espinoza, F.G.; Goldstein, Y.; Savir, E.; Jedrzejewski, J.; Khomenkova, L.; Korsunska, N.; Yukhimchuk, V

    2003-12-31

    Photoluminescence (PL) spectra and Raman scattering spectra of Si-SiO{sub x} systems, prepared by radio frequency magnetron sputtering method and thermal annealed at 1150 deg. C for creation of Si nano-crystallites, were investigated as a function of Si content and Si nano-crystallite sizes. It was shown that the PL spectrum of such systems consists of several bands with peak positions at 1.32-1.34, 1.42-1.58, 1.77, 2.05 and 2.30 eV. The dependencies of these PL band parameters on concentration and size of Si nano-crystallites in the Si-SiO{sub x} system have been investigated and analyzed. The nature of radiative optical transitions for all PL bands is discussed.

  7. Optimization of Waveguide Structure for Tunable Optical Switch in Si/SiGe System

    Institute of Scientific and Technical Information of China (English)

    Seongjae Boo; Won-Taek Han

    2003-01-01

    A new electro-optical device using Si/SiGe-system with two parallel ridge waveguides is proposed for optical switching and the optimization of the structure for a single mode operation is investigated.

  8. Recycling of Al-Si die casting scraps for solar Si feedstock

    Science.gov (United States)

    Seo, Kum-Hee; Jeon, Je-Beom; Youn, Ji-Won; Kim, Suk Jun; Kim, Ki-Young

    2016-05-01

    Recycling of aluminum die-casting scraps for solar-grade silicon (SOG-Si) feedstock was performed successfully. 3 N purity Si was extracted from A383 die-casting scrap by using the combined process of solvent refining and an advanced centrifugal separation technique. The efficiency of separating Si from scrap alloys depended on both impurity level of scraps and the starting temperature of centrifugation. Impurities in melt and processing temperature governed the microstructure of the primary Si. The purity of Si extracted from the scrap melt was 99.963%, which was comparable to that of Si extracted from a commercial Al-30 wt% Si alloy, 99.980%. The initial purity of the scrap was 2.2% lower than that of the commercial alloy. This result confirmed that die-casting scrap is a potential source of high-purity Si for solar cells.

  9. Fabrication and characteristics of the nc-Si/c-Si heterojunction MAGFET

    Institute of Scientific and Technical Information of China (English)

    Zhao Xiaofeng; Wen Dianzhong

    2009-01-01

    A MAGFET using an nc-Si/c-Si heterojunction as source and drain was fabricated by CMOS technology, using two ohm-contact electrodes as Hall outputs on double sides of the channel situated 0.7L from the source. The experimental results show that when V_(DS) = -7.0 V, the magnetic sensitivity of the single nc-Si/c-Si heterojunction magnetic metal oxide semiconductor field effect transistor (MAGFET) with an L : W ratio of 2 : 1 is 21.26 mV/T,and that with an L : W ratio of 4 : 1 is 13.88 mV/T. When the outputs of double nc-Si/c-Si heterojunction MAGFETs with an L : W ratio of 4 : 1 are in series, their magnetic sensitivity is 22.74 mV/T, which is an improvement of about 64% compared with that of a single nc-Si/c-Si heterojunction MAGFET.

  10. 26Si Excited States via One-Neutron Removal from 27Si Using Radioactive Beam

    Science.gov (United States)

    Chen, J.; Chen, A. A.; Amthor, A. M.; Bazin, D.; Becerril, A. D.; Gade, A.; Galaviz, D.; Glasmacher, T.; Kahl, D.; Lorusso, G.; Matos, M.; Ouellet, C. V.; Pereira, J.; Schatz, H.; Smith, K. M.; Wales, B.; Weisshaar, D.; Zegers, R. G. T.

    2013-03-01

    A measurement of the p(27Si, d)26Si reaction has been performed to study levels of 26Si, with connections to the stellar 25Al(p, γ)26Si reaction rate. A beam of adioactive 27Si of energy 84.3 MeV/A was impinged on a polypropylene foil (CH2) of 180 mg/cm2 in thickness. De-excitation γ-rays were detected with a highly-segmented germanium detector array, in coincidence with the 26Si recoils. Our results are an independent measurement of states used in the energy calibration of other experiments on 26Si structure. They also suggest that the spin-parity of the Ex(26Si) = 6454 keV (Er = 940 keV) state should be 4+ instead of the previously adopted assignment of 0+.

  11. W-Mo-Si/SiC Oxidation Protective Coating for Carbon/Carbon Composites

    Institute of Scientific and Technical Information of China (English)

    2007-01-01

    A W-Mo-Si/SiC double-layer oxidation protective coating for carbon/carbon (C/C) composites was prepared by a two-step pack cementation technique. XRD (X-ray diffraction) and SEM (scanning electron microscopy)results show that the coating obtained by the first step pack cementation was a thin inner buffer layer of SiC with some cracks and pores, and a new phase of (WxMo1-x)Si2 appeared after the second step pack cementation. Oxidation test shows that, after oxidation in air at 1773 K for 175 h and thermal cycling between 1773 K and room temperature for 18 times, the weight loss of the W-Mo-Si/SiC coated C/C composites was only 2.06%. The oxidation protective failure of the W-Mo-Si/SiC coating was attributed to the formation of some penetrable cracks in the coating.

  12. Behaviour of Oxygen-Implanted and Hydrogen-Implanted SiGe/Si Heterostructures

    Institute of Scientific and Technical Information of China (English)

    安正华; 张苗; 门传玲; 沈勤我; 林梓鑫; 李开成; 林成鲁

    2002-01-01

    For SiGe-on-insulator fabrication, a l00nm SiGe tilm with uniform germanium composition was grown on a Si(l00) substrate using a molecular beam epitaxy system without a graded SiGe buffer layer. The samples were implanted by oxygen ions at an energy of 45kev and a dose of 3 × 1017 cm-2, and annealed for five hours at 1250°C in flowing (Ar + 5% 02) atmosphere with a l00nm oxide protective layer. The result indicates that a buried oxide layer was successfully formed at the interface of SiGe and Si on the substrate. Furthermore,hydrogen was implanted into SiGe at the energy of 62keV and the dose of 6 × 1016 cm-2 to perform a blistering study, which confirmed the feasibility of H-induced layer splitting in SiGe layer.

  13. Characterization of ultrathin SiO 2/Si interface grown by low temperature plasma oxidation

    Institute of Scientific and Technical Information of China (English)

    2002-01-01

    Ultrathin SiO 2 layers on Si (100) wafers were prepared by plasma oxidation at a low temperature (250℃). The analyses of X-ray photoelectron spectroscopy (XPS) and TEM reveal that the chemical composition of the oxide layer is stoichiometric SiO 2 and the SiO 2/Si interface is abrupt. The thickness of the ultrathin oxide layer obtained from XPS, capacitance-voltage (C-V) and ellipsometry measurements indicate a nonlinear time dependence. The high frequency C-V characterization of MOS structure shows that the fixed charge density in SiO 2 film is about 10 11 cm -2 . It is also shown that the strength of breakdown electrical field of SiO 2 film with 6 nm thickness is of the order of 10 6 Vcm -1 . These properties of the ultrathin SiO 2 layer ensure its application in silicon quantum devices.

  14. Characterization of SiC-SiC composites for accident tolerant fuel cladding

    Science.gov (United States)

    Deck, C. P.; Jacobsen, G. M.; Sheeder, J.; Gutierrez, O.; Zhang, J.; Stone, J.; Khalifa, H. E.; Back, C. A.

    2015-11-01

    Silicon carbide (SiC) is being investigated for accident tolerant fuel cladding applications due to its high temperature strength, exceptional stability under irradiation, and reduced oxidation compared to Zircaloy under accident conditions. An engineered cladding design combining monolithic SiC and SiC-SiC composite layers could offer a tough, hermetic structure to provide improved performance and safety, with a failure rate comparable to current Zircaloy cladding. Modeling and design efforts require a thorough understanding of the properties and structure of SiC-based cladding. Furthermore, both fabrication and characterization of long, thin-walled SiC-SiC tubes to meet application requirements are challenging. In this work, mechanical and thermal properties of unirradiated, as-fabricated SiC-based cladding structures were measured, and permeability and dimensional control were assessed. In order to account for the tubular geometry of the cladding designs, development and modification of several characterization methods were required.

  15. Passivation of surface-nanostructured f-SiC and porous SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Lu, Weifang; Ou, Yiyu

    The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper.......The further enhancement of photoluminescence from nanostructured fluorescent silicon carbide (f-SiC) and porous SiC by using atomic layer deposited (ALD) Al2O3 is studied in this paper....

  16. Fabrication and Properties of Ti3SiC2/SiC Composites

    Institute of Scientific and Technical Information of China (English)

    YIN Hongfeng; FAN Qiang; REN Yun; ZHANG Junzhan

    2008-01-01

    Ti3SiC2/SiC composites were fabricated by reactive hot pressing method. Effects of hot pressing temperature, the content and panicle size of SiC on phase composition, densification, mechanical properties and behavior of stress-strain of the composites were investigated. The results showed that:(1)Hot-pressing temperature influenced the phase composition of Ti3SiC2/SiC composites. The flexural strength and fracture toughness of composites increased with hot pressing temperature.(2)It became more difficult for the composites to densify when the content of SiC in composites increased. It need be sintered at higher temperature to get denser composite. The flexural strength and fracture toughness of composites increased when the content of SiC added in composites increased. However, when the content of SiC reached 50 wt%, the flexural strength and fracture toughness of composites decreased due to high content of pore in composites.(3)When the content of SiC was same, Ti3SiC2/SiC composites were denser while the particle size of SiC added in composites is 12.8μm compared with the composites that the particle size of SiC added is 3μm.The flexural strength and fracture toughness of composites increased with the increase of particle size of SiC added in composites.(4)Ti3SiC2/SiC composites were non-brittle fracture at room temperature.

  17. Minimum bar size for flexure testing of irradiated SiC/SiC composite

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Jones, R.H. [Pacific Northwest National Lab., Richland, WA (United States)

    1998-03-01

    This report covers material presented at the IEA/Jupiter Joint International Workshop on SiC/SiC Composites for Fusion structural Applications held in conjunction with ICFRM-8, Sendai, Japan, Oct. 23-24, 1997. The minimum bar size for 4-point flexure testing of SiC/SiC composite recommended by PNNL for irradiation effects studies is 30 {times} 6 {times} 2 mm{sup 3} with a span-to-depth ratio of 10/1.

  18. C-V and DLTS studies of radiation induced Si-SiO2 interface defects

    Science.gov (United States)

    Capan, I.; Janicki, V.; Jacimovic, R.; Pivac, B.

    2012-07-01

    Interface traps at the Si-SiO2 interface have been and will be an important performance limit in many (future) semiconductor devices. In this paper, we present a study of fast neutron radiation induced changes in the density of Si-SiO2 interface-related defects. Interface related defects (Pb centers) are detected before and upon the irradiation. The density of interface-related defects is increasing with the fast neutron fluence.

  19. An efficient Si light-emitting diode based on an n- ZnO/SiO{sub 2}-Si nanocrystals-SiO{sub 2}/p-Si heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Edward; Su, Fu-Hsiang; Shih, Ying-Tsang; Tsai, Hung-Ling; Chen, Ching-Huang; Wu, Mong-Kai; Yang, Jer-Ren; Chen, Miin-Jang, E-mail: mjchen@ntu.edu.t [Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan (China)

    2009-11-04

    Si nanocrystals embedded in a SiO{sub 2} matrix and an n-type Al-doped ZnO (ZnO:Al) layer were applied to improve the external quantum efficiency from Si in n- ZnO/SiO{sub 2}-Si nanocrystals-SiO{sub 2}/p-Si heterojunction light-emitting diodes (LEDs). The Si nanocrystals were grown by low pressure chemical vapor deposition and the ZnO:Al layer was prepared by atomic layer deposition. The n-type ZnO:Al layer acts as an electron injection layer, a transparent conductive window, and an anti-reflection coating to increase the light extraction efficiency. Owing to the spatial confinement of carriers and surface passivation by the surrounding SiO{sub 2}, the Si nanocrystals embedded in the SiO{sub 2} matrix lead to a significant enhancement of the light emission efficiency from Si. An external quantum efficiency up to 4.3 x 10{sup -4} at the wavelength corresponding to the indirect bandgap of Si was achieved at room temperature.

  20. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    Institute of Scientific and Technical Information of China (English)

    冉广照; 孙永科; 陈源; 戴伦; 崔晓明; 张伯蕊; 乔永平; 马振昌; 宗婉华; 秦国刚

    2003-01-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  1. Electroluminescence and Photoluminescence from Scored Si-Rich SiO2 Film/p-Si Structure

    Science.gov (United States)

    Ran, Guang-Zhao; Sun, Yong-Ke; Chen, Yuan; Dai, Lun; Cui, Xiao-Ming; Zhang, Bo-Rui; Qiao, Yong-Ping; Ma, Zhen-Chang; Zong, Wan-Hua; Qin, Guo-Gang

    2003-02-01

    Electroluminescence (EL) is observed from the Au/Si-rich SiO2 film/p-Si diodes, in which the Si-rich SiO2 films are scored deliberately by a diamond tip. The EL intensity of the scored diode annealed at 800°C is about 6 times of that of the unscored counterpart. The EL spectrum of the unscored diode could be decomposed into two Gaussian luminescence bands with peaks at about 1.83 and 2.23 eV, while for the EL spectrum of the scored diode, an additional Gaussian band at about 3.0 eV appears, and the 1.83-eV peak increases significantly in intensity. The photoluminescence (PL) spectrum of an unscored Si-rich SiO2 film has only one band peaking at about 1.48 eV, whereas the PL spectrum of the scored one has two bands at about 1.48 and 1.97 eV. We consider that the high-density defect regions produced by the scoring provide new luminescence centres and become some types of nonradiative centres in the Si oxide layer, which thus result in changes of the EL and PL spectra.

  2. Microwave Sintering of MoSi2 and SiC/MoSi2 Nanocomposite Ceramics%微波烧结制备MoSi2及SiC/MoSi纳米复合陶瓷

    Institute of Scientific and Technical Information of China (English)

    刘长虹; 艾云龙; 何文

    2012-01-01

    MoSi2 and SiC/MoSi2 nanocomposite ceramics were prepared by microwave sintering. Hybrid heating using SiC as preheating material and reasonable design of heat preservation system realized the fast elevation of temperature of MoSi2 on the low temperature stage, and enhanced the temperature uniformity of MoSi2. The density and mechanical properties tests showed that under the sintering parameters of 1 400℃ and holding 60 min, the properties of pure MoSi2 sample achieved relative density of 93.4% , fracture toughness 4.5 MPa·m1/2, Vickers hardness 10.53 GPa, and bending strength 186 MPa. All the mechanical properties of 10vol. % SiC -MoSi2 were superior to that of pure MoSi2, though the relative density decreased to 90.3%. The temperature of microwave sintering MoSi2 and SiC/ MoSi2 samples decreased 200℃ lower than hot-pressing sintering temperature (1 650℃ ) , but the mechanical properties are actually enhanced greatly, in particular MoSi2sample. Fracture surfaces indicated that compared to hot-pressing sintered samples,the microwave sintered samples presented refined grain size, fine and uniform pore. However the effect of grain refinement of microwave sintering to SiC/MoSi2 is weaken compared to pure MoSi2 sample.%采用微波烧结法制备了MoSi2和10vol% SiC/MoSi2纳米复合陶瓷.通过SiC预加热体的混合式加热法和合理的保温结构设计,实现了MoSi2低温阶段的快速升温,提高了温度均匀性.密度和力学性能测试结果表明,1450℃保温60 min烧结工艺下,MoSi2试样的相对密度达到93.4%,断裂韧度4.5 MPa·ml/2,维氏硬度为10.53 GPa,弯曲强度为186 MPa.10vol% SiC/MoSi2试样尽管相对密度下降为90.3%,但各项力学性能均优于MoSi2试样.相比1650℃热压烧结,微波烧结温度降低了200℃,MoSi2和SiC/MoSi2试样致密性有所下降,但力学性能有较大提高,尤其是MoSi2试样.断口扫描分析表明,微波烧结试样相对热压烧结试样基体晶粒更细,孔隙细

  3. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.;

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport...

  4. Thermal Stability of siRNA Modulates Aptamer- conjugated siRNA Inhibition

    Directory of Open Access Journals (Sweden)

    Alexey Berezhnoy

    2012-01-01

    Full Text Available Oligonucleotide aptamer-mediated in vivo cell targeting of small interfering RNAs (siRNAs is emerging as a useful approach to enhance the efficacy and reduce the adverse effects resulting from siRNA-mediated genetic interference. A current main impediment in aptamer-mediated siRNA targeting is that the activity of the siRNA is often compromised when conjugated to an aptamer, often requiring labor intensive and time consuming design and testing of multiple configurations to identify a conjugate in which the siRNA activity has not been significantly reduced. Here, we show that the thermal stability of the siRNA is an important parameter of siRNA activity in its conjugated form, and that siRNAs with lower melting temperature (Tm are not or are minimally affected when conjugated to the 3′ end of 2′F-pyrimidine-modified aptamers. In addition, the configuration of the aptamer-siRNA conjugate retains activity comparable with the free siRNA duplex when the passenger strand is co-transcribed with the aptamer and 3′ overhangs on the passenger strand are removed. The approach described in this paper significantly reduces the time and effort necessary to screening siRNA sequences that retain biological activity upon aptamer conjugation, facilitating the process of identifying candidate aptamer-siRNA conjugates suitable for in vivo testing.

  5. Microstructure and abrasive wear studies of laser clad Al-Si/SiC composite coatings

    NARCIS (Netherlands)

    Anandkumar, R.; Colaco, R.; Ocelik, V.; De Hosson, J. Th. M.; Vilar, R.; Gyulai, J; Szabo, PJ

    2007-01-01

    Surface coatings of Al-Si/SiC metal-matrix composites were deposited on Al-7 wt. % Si alloy substrates by laser cladding. The microstructure of the coatings was characterized by optical microscopy, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The microstructure of the coating mate

  6. The effect of biaxial strain on impurity diffusion in Si and SiGe

    DEFF Research Database (Denmark)

    Larsen, Arne Nylandsted; Zangenberg, Nikolaj; Fage-Pedersen, Jacob

    2005-01-01

    Results from diffusion studies of different impurities in biaxially strained Si and Si"1"-"xGe"x for low x-values will be presented. The structures are all molecular-beam epitaxy (MBE) grown on strain-relaxed Si"1"-"xGe"x layers, and the impurity profiles are introduced during growth. We have...

  7. Enhanced electroluminescence from nanocrystallite Si based MOSLED by interfacial Si nanopyramids

    Institute of Scientific and Technical Information of China (English)

    Gong-Ru Lin

    2007-01-01

    The interfacial Si nano-pyramid-enhanced electroluminescence (EL) of an ITO/SiOx/p-Si/Al metal-oxidesemiconductor (MOS) diode with turn-on voltage of 50 V, threshold current of 1.23 mA/cm2, output power of 16 nW, and lifetime of 10 h is reported.

  8. About the International System of Units (SI) Part III. SI Table

    Science.gov (United States)

    Aubrecht, Gordon J., II; French, Anthony P.; Iona, Mario

    2012-01-01

    Before discussing more details of SI, we will summarize the essentials in a few tables that can serve as ready references. If a unit isn't listed in Tables I-IV, it is not part of SI or specifically allowed for use with SI. The units and symbols that are sufficient for most everyday applications are given in bold.

  9. Computer aided cooling curve analysis for Al-5Si and Al-11Si alloys

    African Journals Online (AJOL)

    user

    Aluminium-Silicon (Al-Si) alloys are considered as the most important cast .... of MA1, the melt was stirred gently with zircon coated iron rod and was held for 5 min. ..... and mechanical properties of Al-7Si and Al-7Si-2.5Cu cast alloys, Materials ...

  10. Preparation of Si3N4–SiC composites by microwave route

    Indian Academy of Sciences (India)

    M Panneerselvam; K J Rao

    2002-12-01

    Si3N4–SiC composites have been microwave sintered using -Si3N4 and -SiC as starting materials. Si3N4 rich compositions (95 and 90 vol.% Si3N4) have been sintered above 96% of theoretical density without using any sintering additives in 40 min. A monotonic decrease in relative density is observed with increase in SiC proportion in the composite. Decrease in relative density has manifested in the reduction of fracture toughness and microhardness values of the composite with increase in SiC content although the good sintering of matrix Si3N4 limits the decrease of fracture toughness. Highest value of fracture toughness of 6.1 MPa m1/2 is observed in 10 vol.% SiC composite. Crack propagation appears to be transgranular in the Si3N4 matrix and the toughening of the composites is through crack deflection around hard SiC particles in addition to its debonding from the matrix.

  11. Thermochemical instability effects in SiC-based fibers and SiC{sub f}/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Youngblood, G.E.; Henager, C.H.; Jones, R.H. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1997-08-01

    Thermochemical instability in irradiated SiC-based fibers with an amorphous silicon oxycarbide phase leads to shrinkage and mass loss. SiC{sub f}/SiC composites made with these fibers also exhibit mass loss as well as severe mechanical property degradation when irradiated at 800{degrees}C, a temperature much below the generally accepted 1100{degrees}C threshold for thermomechanical degradation alone. The mass loss is due to an internal oxidation mechanism within these fibers which likely degrades the carbon interphase as well as the fibers in SiC{sub f}/SiC composites even in so-called {open_quotes}inert{close_quotes} gas environments. Furthermore, the mechanism must be accelerated by the irradiation environment.

  12. Silane photoabsorption spectra near the Si 2p thresholds: the geometry of Si 2p excited SiH4

    Institute of Scientific and Technical Information of China (English)

    张卫华; 许如清; 李家明

    2003-01-01

    Based on the multiple-scattering self-consistent-field method, we have studied the photoabsorption spectra near the Si 2p thresholds of silane. According to our calculations, the clear assignments of the inner-shell photoabsorption spectra are provided. In comparison with the high-resolution experimental spectra, the geometric structure of the Si 2p-excited SiH4** is recommended to be of a C2v symmetry. More specifically, the Si 2p-excited Si4** have two bond lengths of 2.50 a.u. and another two bond lengths of 2.77 a.u., and the corresponding two bond angles are 104.0° and 112.5° respectively.

  13. Tunneling magnetoresistance in Si nanowires

    Science.gov (United States)

    Montes, E.; Rungger, I.; Sanvito, S.; Schwingenschlögl, U.

    2016-11-01

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green’s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  14. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  15. Metastability of a-SiOx:H thin films for c-Si surface passivation

    Science.gov (United States)

    Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

    2017-01-01

    The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution

  16. Experimental PDT: studies on new Si-phthalocyanines and Si-naphthalocyanines in Cremophor emulsions

    Science.gov (United States)

    Shopova, Maria; Mantareva, Vanya; Woehrle, Dieter; Mueller, Silke

    1996-12-01

    In the present work the following silicon (IV) - phthalocyanines and -naphthalocyanines bearing methoxyethylene glycol or methoxypolyethylene glycol covalently bound at the silicon are investigated: SiPc[OCH2CH2OCH3]2 (SiPc1), SiNc[OCH2CH2OCH3]2 (SiNc), SiPc[(OCH2CH2)nOCH3] with n approximately 115 (SiPc2). The phototherapeutic effect was shown at Lewis lung carcinoma implanted in mice. SiPc2 is monomeric soluble in water whereas the other two compounds aggregated in this solvent. Therefore these compounds were dissolved monomer in in aqueous Cremophor solution before in vivo administration. Laser irradiation was applied 7 days after implantation and 24 h after drug administration at the following wavelength (eta) ext: 672 nm for SiPc1 and SiPc2, 782 nm for SiNc. In all cases a fluence rate of 370 mW/cm2 at fluence of 360 J/cm2 was used. The assessment criteria for the tumor response were the changes in the mean tumor diameter with time, regrowth delay and average survival time (AST). According to the first parameter the most promising result was obtained after treatment with SiPc1. For example the mean tumor diameter increases as follows: SiPc1 less than SiPc2 less than SiNc very much less than control group without photosensitizer. The regrowth delay showed the same trend. however, for AST another dependence was observed. AST was the longest for SiPc2 (26 days) and shortest for SiNc (22 days). Compared to the control group (without sensitizer and irradiation) the AST was 9 days longer after SiPc2 treatment. Comparing SiPc1 and SiPc2 the chain length of the substituents does not influence the phototherapeutic properties. The detected therapeutic results probably are connected with the long wavelength absorption of the photosensitizers. The relatively lower affectivity of SiNc may be due to a lower degree of tumor accumulation as it was observed in our preliminary pharmacokinetic studies. It is also possible that the shorter AST after treatment with SiNc is

  17. 低空大展弦比无人机翼梢磁梯度测量探头气动特性及影响%Aerodynamic Characteristics and Influence of an Airborne Magnetic Gradient Measuring Probe on the Wing-Tip of a High Aspect Ratio UAV at Low Altitude

    Institute of Scientific and Technical Information of China (English)

    2016-01-01

    针对一种低空大展弦比无人机,文章进行全机和翼梢磁梯度测量探头数值模拟.全机计算给出翼梢磁梯度测量探头对全机气动特性和操稳特性的影响;翼梢磁梯度测量探头计算实现了气动外形优化设计,在保持全机操稳特性的前提下,最大程度地减小全机气动阻力增量.结果表明,磁梯度测量探头对全机气动阻力增量在9%之内,俯仰力矩变化在5%之内,对全机操稳特性的影响不大,气动外形优化设计基本满足该低空大展弦比无人机的安全飞行技术要求.

  18. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup...

  19. Synthesis of Hybrid SiC/SiO2 Nanoparticles and Their Polymer Nanocomposites

    Science.gov (United States)

    Hassan, Tarig A.; Rangari, Vijaya K.; Baker, Fredric; Jeelani, Shaik

    2013-04-01

    In the present investigation, silicon carbide (β-SiC) nanoparticles ( 30 nm) were coated on silicon dioxide (SiO2) nanoparticles ( 200 nm) using sonochemical method. The resultant hybrid nanoparticles were then infused into SC-15 epoxy resin to enhance the thermal and mechanical properties of SC-15 epoxy for structural application. To fabricate an epoxy-based nanocomposite containing SiC/SiO2 hybrid nanoparticles, we have opted a two-step process. In the first step, the silica nanoparticles were coated with SiC nanoparticles using high intensity ultrasonic irradiation. In a second step, 1 wt.% of as-prepared SiC/SiO2 particles were dispersed in epoxy part-A (diglycidylether of bisphenol A) using a high intensity ultrasound for 30 min at 5°C. The part-B (cycloaliphatic amine hardener) of the epoxy was then mixed with part-A-SiC/SiO2 mixture using a high-speed mechanical stirrer for 10 min. The SiC/SiO2/epoxy resin mixture was cured at room temperature for 24 h. The SiC nanoparticles coating on SiO2 was characterized using X-ray diffraction (XRD) and high resolution transmission electron microscope (TEM). The as-prepared nanocomposite samples were characterized using thermo gravimetric analysis (TGA) and differential scanning calorimeter (DSC). Compression tests have been carried out for both nanocomposite and neat epoxy systems. The results indicated that 1 wt.% (SiC) + (SiO2) loading derived improvements in both thermal and mechanical properties when compared to the neat epoxy system.

  20. Optical properties of passivated Si nanocrystals and SiO{sub {ital x}} nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Dinh, L.N. [Department of Applied Science, University of California, Davis/Livermore, California (United States)]|[Chemistry and Materials Science Department, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Chase, L.L.; Balooch, M.; Siekhaus, W.J. [Chemistry and Materials Science Department, University of California, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Wooten, F. [Department of Applied Science, University of California, Davis/Livermore, California 94550 (United States)

    1996-08-01

    Thin films of Si nanoclusters passivated with oxygen or hydrogen, with an average size of a few nanometers, have been synthesized by thermal vaporization of Si in an Ar buffer gas, followed by subsequent exposure to oxygen or atomic hydrogen. High-resolution transmission electron microscopy and x-ray diffraction revealed that these nanoclusters were crystalline. However, during synthesis, if oxygen was the buffer gas, a network of amorphous Si oxide nanostructures (an-SiO{sub {ital x}}) with occasional embedded Si dots was formed. All samples showed strong infrared and/or visible photoluminescence (PL) with varying decay times from nanoseconds to microseconds depending on synthesis conditions. Absorption in the Si cores for surface passivated Si nano- crystals (nc-Si), but mainly in oxygen related defect centers for an-SiO{sub {ital x}}, was observed by photoluminescence excitation spectroscopy. The visible components of PL spectra were noted to blueshift and broaden as the size of the nc-Si was reduced. There were differences in PL spectra for hydrogen and oxygen passivated nc-Si. Many common PL properties between oxygen passivated nc-Si and an-SiO{sub {ital x}} were observed. Our data can be explained by a model involving absorption between quantum confined states in the Si cores and emission for which the decay times are very sensitive to surface and/or interface states. The emission could involve a simple band-to-band recombination mechanism within the Si cores. The combined evidence of all of our experimental results suggests, however, that emission between surface or interface states is a more likely mechanism. {copyright} {ital 1996 The American Physical Society.}