High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

Science.gov (United States)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

E-beam high voltage switching power supply

Science.gov (United States)

Shimer, Daniel W.; Lange, Arnold C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

E-beam high voltage switching power supply

International Nuclear Information System (INIS)

Shimer, D.W.; Lange, A.C.

1997-01-01

A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360 degree/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs

Bootstrapped Low-Voltage Analog Switches

DEFF Research Database (Denmark)

Steensgaard-Madsen, Jesper

1999-01-01

Novel low-voltage constant-impedance analog switch circuits are proposed. The switch element is a single MOSFET, and constant-impedance operation is obtained using simple circuits to adjust the gate and bulk voltages relative to the switched signal. Low-voltage (1-volt) operation is made feasible...

Design and Implementation of a High Efficiency, Low Component Voltage Stress, Single-Switch High Step-Up Voltage Converter for Vehicular Green Energy Systems

Directory of Open Access Journals (Sweden)

Yu-En Wu

2016-09-01

Full Text Available In this study, a novel, non-isolated, cascade-type, single-switch, high step-up DC/DC converter was developed for green energy systems. An integrated coupled inductor and voltage lift circuit were applied to simplify the converter structure and satisfy the requirements of high efficiency and high voltage gain ratios. In addition, the proposed structure is controllable with a single switch, which effectively reduces the circuit cost and simplifies the control circuit. With the leakage inductor energy recovery function and active voltage clamp characteristics being present, the circuit yields optimizable conversion efficiency and low component voltage stress. After the operating principles of the proposed structure and characteristics of a steady-state circuit were analyzed, a converter prototype with 450 W, 40 V of input voltage, 400 V of output voltage, and 95% operating efficiency was fabricated. The Renesas MCU RX62T was employed to control the circuits. Experimental results were analyzed to validate the feasibility and effectiveness of the proposed system.

State Recognition of High Voltage Isolation Switch Based on Background Difference and Iterative Search

Science.gov (United States)

Xu, Jiayuan; Yu, Chengtao; Bo, Bin; Xue, Yu; Xu, Changfu; Chaminda, P. R. Dushantha; Hu, Chengbo; Peng, Kai

2018-03-01

The automatic recognition of the high voltage isolation switch by remote video monitoring is an effective means to ensure the safety of the personnel and the equipment. The existing methods mainly include two ways: improving monitoring accuracy and adopting target detection technology through equipment transformation. Such a method is often applied to specific scenarios, with limited application scope and high cost. To solve this problem, a high voltage isolation switch state recognition method based on background difference and iterative search is proposed in this paper. The initial position of the switch is detected in real time through the background difference method. When the switch starts to open and close, the target tracking algorithm is used to track the motion trajectory of the switch. The opening and closing state of the switch is determined according to the angle variation of the switch tracking point and the center line. The effectiveness of the method is verified by experiments on different switched video frames of switching states. Compared with the traditional methods, this method is more robust and effective.

High voltage fast switches for nuclear applications

International Nuclear Information System (INIS)

Chatroux, D.; Lausenaz, Y.; Villard, J.F.; Lafore, D.

1999-01-01

SILVA process consists in a selective ionization of the 235 uranium isotope, using laser beams generated by dye lasers pumped by copper vapour laser (C.V.L.). SILVA involves power electronic for 3 power supplies: - copper vapour laser power supply, - extraction power supply to generate the electric field in the vapour, and - electron beam power supply for vapour generation. This article reviews the main switches that are proposed on the market or are on development and that could be used in SILVA power supplies. The SILVA technical requirements are: high power, high voltage and very short pulses (200 ns width). (A.C.)

Suppressing voltage transients in high voltage power supplies

International Nuclear Information System (INIS)

Lickel, K.F.; Stonebank, R.

1979-01-01

A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

A high voltage DC switching power supply of corona discharge for ozone tube

International Nuclear Information System (INIS)

Ketkaew, Siseerot

2007-08-01

Full text: This paper presents a study of design and construction of a high voltage DC switching power supply for corona generating of ozone gas generating. This supply uses fly back converter at 3 k Vdc 30 khz and controls its operation using PWM techniques. I C TL494 is controlled of the switching. The testing of supply by putting high voltage to ozone gas tube at one-hour, the oxygen quantity 21 % of air, which ozone tube model enables ozone gas generating capacity of 95.2 mgO3/hr

Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

Science.gov (United States)

Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

2011-01-01

A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

Evaluation of the contact switch materials in high voltage power supply for generate of underwater shockwave by electrical discharge

Directory of Open Access Journals (Sweden)

K Higa

2016-10-01

Full Text Available We have developed the high voltage power-supply unit by Cockcroft-Walton circuit for ingenerate high pressure due to underwater shockwave by electrical discharge. This high voltage power supply has the problem of the metal contact switch operation that contact switch stop by melting and bonding due to electrical spark. We have studied the evaluation of materials of contact switch for the reducing electrical energy loss and the problem of contact switch operation. In this research, measurement of discharge voltage and high pressure due to underwater shockwave was carried out using the contact switch made of different materials as brass plate, brass-carbon plate-brass and carbon block. The contact switch made of carbon is effective to reduce energy loss and problem of contactor switch operation.

Gas tube-switched high voltage DC power converter

Science.gov (United States)

She, Xu; Bray, James William; Sommerer, Timothy John; Chokhawala, Rahul

2018-05-15

A direct current (DC)-DC converter includes a transformer and a gas tube-switched inverter circuit. The transformer includes a primary winding and a secondary winding. The gas tube-switched inverter circuit includes first and second inverter load terminals and first and second inverter input terminals. The first and second inverter load terminals are coupled to the primary winding. The first and second inverter input terminals are couplable to a DC node. The gas tube-switched inverter circuit further includes a plurality of gas tube switches respectively coupled between the first and second inverter load terminals and the first and second inverter input terminals. The plurality of gas tube switches is configured to operate to generate an alternating current (AC) voltage at the primary winding.

Irradiation of optically activated SI-GaAs high-voltage switches with low and high energy protons

CERN Document Server

Bertolucci, Ennio; Mettivier, G; Russo, P; Bisogni, M G; Bottigli, U; Fantacci, M E; Stefanini, A; Cola, A; Quaranta, F; Vasanelli, L; Stefanini, G

1999-01-01

Semi-Insulating Gallium Arsenide (SI-GaAs) devices have been tested for radiation hardness with 3-4 MeV or 24 GeV proton beams. These devices can be operated in dc mode as optically activated electrical switches up to 1 kV. Both single switches (vertical Schottky diodes) and multiple (8) switches (planar devices) have been studied, by analyzing their current-voltage (I-V) reverse characteristics in the dark and under red light illumination, both before and after irradiation. We propose to use them in the system of high-voltage (-600 V) switches for the microstrip gas chambers for the CMS experiment at CERN. Low energy protons (3-4 MeV) were used in order to produce a surface damage below the Schottky contact: their fluence (up to 2.6*10/sup 15/ p/cm/sup 2/) gives a high-dose irradiation. The high energy proton irradiation (energy: 24 GeV, fluence: 1.1*10/sup 14/ p/cm/sup 2/) reproduced a ten years long proton exposure of the devices in CMS experiment conditions. For low energy irradiation, limited changes of ...

Contribution to high voltage matrix switches reliability

International Nuclear Information System (INIS)

Lausenaz, Yvan

2000-01-01

Nowadays, power electronic equipment requirements are important, concerning performances, quality and reliability. On the other hand, costs have to be reduced in order to satisfy the market rules. To provide cheap, reliability and performances, many standard components with mass production are developed. But the construction of specific products must be considered following these two different points: in one band you can produce specific components, with delay, over-cost problems and eventuality quality and reliability problems, in the other and you can use standard components in a adapted topologies. The CEA of Pierrelatte has adopted this last technique of power electronic conception for the development of these high voltage pulsed power converters. The technique consists in using standard components and to associate them in series and in parallel. The matrix constitutes high voltage macro-switch where electrical parameters are distributed between the synchronized components. This study deals with the reliability of these structures. It brings up the high reliability aspect of MOSFETs matrix associations. Thanks to several homemade test facilities, we obtained lots of data concerning the components we use. The understanding of defects propagation mechanisms in matrix structures has allowed us to put forwards the necessity of robust drive system, adapted clamping voltage protection, and careful geometrical construction. All these reliability considerations in matrix associations have notably allowed the construction of a new matrix structure regrouping all solutions insuring reliability. Reliable and robust, this product has already reaches the industrial stage. (author) [fr

A novel high voltage start up circuit for an integrated switched mode power supply

Energy Technology Data Exchange (ETDEWEB)

Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

2010-09-15

A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

A High-Voltage Low-Power Switched-Capacitor DC-DC Converter Based on GaN and SiC Devices for LED Drivers

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

Previous research on switched-capacitor DC-DC converters has focused on low-voltage and/or high-power ranges where the efficiencies are dominated by conduction loss. Switched-capacitor DC-DC converters at high-voltage (> 100 V) low-power (high efficiency and high power density...... are anticipated to emerge. This paper presents a switched-capacitor converter with an input voltage up to 380 V (compatible with rectified European mains) and a maximum output power of 10 W. GaN switches and SiC diodes are analytically compared and actively combined to properly address the challenges at high......-voltage low-current levels, where switching loss becomes significant. Further trade-off between conduction loss and switching loss is experimentally optimized with switching frequencies. Three variant designs of the proposed converter are implemented, and the trade-off between the efficiency and the power...

High PRF high current switch

Science.gov (United States)

Moran, Stuart L.; Hutcherson, R. Kenneth

1990-03-27

A triggerable, high voltage, high current, spark gap switch for use in pu power systems. The device comprises a pair of electrodes in a high pressure hydrogen environment that is triggered by introducing an arc between one electrode and a trigger pin. Unusually high repetition rates may be obtained by undervolting the switch, i.e., operating the trigger at voltages much below the self-breakdown voltage of the device.

High-voltage high-current triggering vacuum switch

International Nuclear Information System (INIS)

Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

2012-01-01

Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

On-line Monitoring Device for High-voltage Switch Cabinet Partial Discharge Based on Pulse Current Method

Science.gov (United States)

Y Tao, S.; Zhang, X. Z.; Cai, H. W.; Li, P.; Feng, Y.; Zhang, T. C.; Li, J.; Wang, W. S.; Zhang, X. K.

2017-12-01

The pulse current method for partial discharge detection is generally applied in type testing and other off-line tests of electrical equipment at delivery. After intensive analysis of the present situation and existing problems of partial discharge detection in switch cabinets, this paper designed the circuit principle and signal extraction method for partial discharge on-line detection based on a high-voltage presence indicating systems (VPIS), established a high voltage switch cabinet partial discharge on-line detection circuit based on the pulse current method, developed background software integrated with real-time monitoring, judging and analyzing functions, carried out a real discharge simulation test on a real-type partial discharge defect simulation platform of a 10KV switch cabinet, and verified the sensitivity and validity of the high-voltage switch cabinet partial discharge on-line monitoring device based on the pulse current method. The study presented in this paper is of great significance for switch cabinet maintenance and theoretical study on pulse current method on-line detection, and has provided a good implementation method for partial discharge on-line monitoring devices for 10KV distribution network equipment.

Analysis and design of a high-efficiency zero-voltage-switching step ...

Indian Academy of Sciences (India)

to soft-switching operation of the power switches and output diodes, the ... However, the complexity and the overall cost are raised and the system ... the proposed converter has a voltage doubler structure which consists of two secondary wind-.

Design automation of switching mode high voltage power supply for nuclear instruments

International Nuclear Information System (INIS)

El-araby, S.M.S.

1999-01-01

This paper presents an automation procedure for the design of switching mode high voltage power supplies, using Pc programming facility. The procedure permits the selection of a ready made or designed ferrite transformer. This selection could be achieved according to the designer desire; as the program includes complete information about ready made ferrite transformer through complete database. The procedure is based on suggested template circuit. Micro-Cap IV simulation package is used to verify the desired high voltage power supply design. Simulation results agree quite well with suggested procedure's results. Design aspects and development needed to increase automation capabilities are also discussed

Analysis of dc-Link Voltage Switching Ripple in Three-Phase PWM Inverters

Directory of Open Access Journals (Sweden)

Marija Vujacic

2018-02-01

Full Text Available The three-phase voltage source inverter (VSI is de facto standard in power conversion systems. To realize high power density systems, one of the items to be correctly addressed is the design and selection of the dc-link capacitor in relation to the voltage switching ripple. In this paper, effective formulas for designing the dc-link capacitor as a function of the switching voltage ripple amplitude are obtained, considering the operating conditions such as the modulation index and the output current amplitude. The calculations are obtained considering the requirements and restrictions referring to the high (switching-frequency dc-link voltage ripple component. Analyses have been performed considering the dc source impedance (non-ideal dc voltage source at the switching frequency and a balanced load. Analytical expressions are derived for the dc-link voltage switching ripple amplitude and its maximum value over the fundamental period. Different values of modulation index and output phase angle have been considered and different diagrams are presented. Analytical results were validated both by simulations and comprehensive experimental tests.

Structural health monitoring of high voltage electrical switch ceramic insulators in seismic areas

OpenAIRE

REBILLAT, Marc; BARTHES, Clément; MECHBAL, Nazih; MOSALAM, Khalid M.

2014-01-01

International audience; High voltage electrical switches are crucial components to restart rapidly the electrical network right after an earthquake. But there currently exists no automatic procedure to check if these ceramic insulators have suffered after an earthquake, and there exists no method to recertify a given switch. To deploy a vibration-based structural health monitoring method on ceramic insulators a large shake table able to generate accelerations up to 3 g was used. The idea unde...

A new Zero-Voltage-Transition PWM switching cell

Energy Technology Data Exchange (ETDEWEB)

Grigore, V. [Electronics and Telecommunications Faculty `Politebuica` University Bucharest (Romania); Kyyrae, J. [Helsinki University of Technology, Otaniemi (Finland): Institute of Intelligent Power Electronics

1997-12-31

In this paper a new Zero-Voltage-Transition (ZVT) PWM switching cell is presented. The proposed switching cell is composed of the normal hard-switched PWM cell (consisting of one active switch and one passive switch), plus an auxiliary circuit (consisting of one active switch and some reactive components). The auxiliary circuit is inactive during the ON and OFF intervals of the switches in the normal PWM switch. However, the transitions between the two states are controlled by the auxiliary circuit. Prior to turn-on, the voltage across the active switch in the PWM cell is forced to zero, thus the turn-on losses of the active switch are practically eliminated. At turn-off the auxiliary circuit behaves like a non-dissipative passive snubber reducing the turn-off losses to a great extent. Zero-Voltage-Transition switching technique almost eliminates switching losses. The active switch operates under ZVT conditions, the passive switch (diode) has a controlled reverse recovery, and the switch in the auxiliary circuit operates under Zero-Current-Switching (ZCS) conditions. (orig.) 6 refs.

High-voltage switching for in-flight capture of keV antiprotons in a Penning trap

International Nuclear Information System (INIS)

Fei, X.; Davisson, R.; Gabrielse, G.

1987-01-01

The recently observed in-flight capture of keV antiprotons and protons in a Penning trap requires that the -3-kV potentials on electrodes of a Penning trap near 4.2 K be switched on and off with switching times less than 20 ns. These rapidly switched potentials are applied via transmission lines which are not terminated at the trap, thereby avoiding unacceptable heat load on the helium Dewar. Simple high-voltage switching circuits are constructed using krytrons and reed relays. A krytron provides the rapid switching and stays on just long enough for a reed relay to kick in and maintain the switched state indefinitely

Low Actuating Voltage Spring-Free RF MEMS SPDT Switch

Directory of Open Access Journals (Sweden)

Deepak Bansal

2016-01-01

Full Text Available RF MEMS devices are known to be superior to their solid state counterparts in terms of power consumption and electromagnetic response. Major limitations of MEMS devices are their low switching speed, high actuation voltage, larger size, and reliability. In the present paper, a see-saw single pole double throw (SPDT RF MEMS switch based on anchor-free mechanism is proposed which eliminates the above-mentioned disadvantages. The proposed switch has a switching time of 394 nsec with actuation voltage of 5 V. Size of the SPDT switch is reduced by utilizing a single series capacitive switch compared to conventional switches with capacitive and series combinations. Reliability of the switch is improved by adding floating metal and reducing stiction between the actuating bridge and transmission line. Insertion loss and isolation are better than −0.6 dB and −20 dB, respectively, for 1 GHz to 20 GHz applications.

The Design of Nanosecond Fast-switch Pulsed High Voltage Power Supply Based on Solid-state

International Nuclear Information System (INIS)

Chen Wenguang; Chen Wei; Rao Yihua

2009-01-01

The high voltage pulsed power supply is applied in the experiment of the nuclear science widely. It main consist of DC high-voltage power supply (HVPS) and pulse modulator. The high-frequency series-resonant inverter technology and IGBT series technology are used to design the HVPS and the modulator, respectively. The main circuit, control circuit, high voltage transformer and solid-state switch are illuminated in the paper. The apparatus can operate at a maximum output voltage of 6 kilovolt, which can be modulated single pulse and also be modulated by series pulse. A prototype is fabricated and tested, experimental results show that the pulsed power supply is well-designed and rising edge time to meet the nsclass; it can achieve the requirement of rapid modulation. (authors)

A comparison of medium voltage static transfer switches and medium voltage mechanical transfer switches

Energy Technology Data Exchange (ETDEWEB)

Risko, W. P.

2002-07-01

Medium voltage static transfer switches (MVSTS) and medium voltage mechanical transfer switches (MVATS) perform a common function, namely selecting between two independent power sources to provide uninterrupted power to the loads. Although the functions are the same the method of performing that function is different and this method impacts the sources and connected load. This article describes the two methods of transfer -- mechanical and static -- their advantages and disadvantages, and their preferred applications. The MVSTS can be incorporated into many applications; it can work in conjunction with backup sources such as generators; and can replace generators as a low cost solution. The reliability of the MVSTS is very high; it also outperforms the MVATS with regard to transfer speed, and can react to anomalies in the same sub-cycle time frame. Because the design of the MVSTS is modular, it can be engineered and designed to fit into existing and future systems and applications, and can be used with different switchgear variations and protection arrangements. For example, load isolation and protection breakers can be added to the switchgear to provide flexibility and isolation.

A Voltage Doubler Circuit to Extend the Soft-switching Range of Dual Active Bridge Converters

DEFF Research Database (Denmark)

Qin, Zian; Shen, Yanfeng; Wang, Huai

2017-01-01

A voltage doubler circuit is realized to extend the soft-switching range of Dual Active Bridge (DAB) converters. No extra hardware is added to the DAB to form this circuit, since it is composed of the dc blocking capacitor and the low side full bridge converter, which already exist in DAB....... With the voltage doubler, the DAB converter can achieve soft switching and high efficiency when the low side dc voltage is close to 2 pu (1 pu is the high side dc voltage divided by the transformer turn ratio), which can be realized only when the low side dc voltage is close to 1 pu by using the conventional phase...... shift modulation in DAB. Thus the soft switching range is extended. The soft switching boundary conditions are derived. A map to show the soft switching or hard switching in the full load and voltage range is obtained. The feasibility and effectiveness of the proposed method is finally verified...

High voltage, high power operation of the plasma erosion opening switch

International Nuclear Information System (INIS)

Neri, J.M.; Boller, J.R.; Ottinger, P.F.; Weber, B.V.; Young, F.C.

1987-01-01

A Plasma Erosion Opening Switch (PEOS) is used as the opening switch for a vacuum inductive storage system driven by a 1.8-MV, 1.6-TW pulsed power generator. A 135-nH vacuum inductor is current charged to ∼750 kA in 50 ns through the closed PEOS which then opens in <10 ns into an inverse ion diode load. Electrical diagnostics and nuclear activations from ions accelerated in the diode yield a peak load voltage (4.25 MV) and peak load power (2.8 TW) that are 2.4 and 1.8 times greater than ideal matched load values for the same generator pulse

High voltage, fast turn-on and turn-off switch: Final report for period September 2, 1998 - March 17, 1999

International Nuclear Information System (INIS)

Jochen Schein; Xiaoxi Xu; Niansheng Qi; Steven Gensler; Rahul Prasad; Mahadevan Krishnan

1999-01-01

The aspect to be investigated during this contract was an electron-beam triggered diamond switch to be used in high power modulators. Today's high power modulators require higher voltage switches than those developed to date. Specifically, the proposed 1 TeV linear collider, the NLC/ILC at the Stanford Linear Accelerator Center (SLAC), consists of two linacs with 6600 X-Band klystrons powered by 3300 high power modulators. These modulators require switches capable of handling 80 kV, switching 8 kA with pulse durations ranging from 2 ps (linac) to 6 micros (pre-linac) with switching times <50 ns at pulse repetition frequencies up to 180 Hz. In addition the large number of switches and other components dictate a pulse to pulse jitter of <10 ns and a mean time between failures of at least 50,000 hours. The present approach is to use hydrogen filled thyratrons. While these switches meet the voltage and conduction current requirements they lack the required reliability (pulse to pulse jitter) and lifetime. Research to improve these aspects is in progress. A solid state switch inherently offers the required reliability and lifetime. However, Si-based switches developed to date are limited to about 5 kV and several must be stacked in series to deliver the required voltage. This further increases the already large parts count and compromises reliability and lifetime. A monolithic, solid state switch capable of meeting all the requirements for X-Band modulators would be ideal. DOE selected this proposal for a Phase 1 SBIR award and this final report describes the progress made during the contract

High voltage, fast turn-on and turn-off switch: Final report for period September 2, 1998 - March 17, 1999

Energy Technology Data Exchange (ETDEWEB)

Jochen Schein; Xiaoxi Xu; Niansheng Qi; Steven Gensler; Rahul Prasad; Mahadevan Krishnan

1999-04-10

The aspect to be investigated during this contract was an electron-beam triggered diamond switch to be used in high power modulators. Today's high power modulators require higher voltage switches than those developed to date. Specifically, the proposed 1 TeV linear collider, the NLC/ILC at the Stanford Linear Accelerator Center (SLAC), consists of two linacs with 6600 X-Band klystrons powered by 3300 high power modulators. These modulators require switches capable of handling 80 kV, switching 8 kA with pulse durations ranging from 2 ps (linac) to 6 {micro}s (pre-linac) with switching times <50 ns at pulse repetition frequencies up to 180 Hz. In addition the large number of switches and other components dictate a pulse to pulse jitter of <10 ns and a mean time between failures of at least 50,000 hours. The present approach is to use hydrogen filled thyratrons. While these switches meet the voltage and conduction current requirements they lack the required reliability (pulse to pulse jitter) and lifetime. Research to improve these aspects is in progress. A solid state switch inherently offers the required reliability and lifetime. However, Si-based switches developed to date are limited to about 5 kV and several must be stacked in series to deliver the required voltage. This further increases the already large parts count and compromises reliability and lifetime. A monolithic, solid state switch capable of meeting all the requirements for X-Band modulators would be ideal. DOE selected this proposal for a Phase 1 SBIR award and this final report describes the progress made during the contract.

A plasma switch synchronous closing operations in high-voltage networks

International Nuclear Information System (INIS)

Mourente, P.

1984-01-01

Overvoltages and overcurrent arising in energizing or in fast reclosing operations are a concerning problem in high-voltage networks. Reduction of overvoltages and overcurrents is possible using the synchronous closing technique. Some attempts have been done to perform the synchronous closing with conventional circuit-breakers. But since the requirements to synchronous closing and to current interruption are very contradictory this technique is not yet a common practice. Three simple cases may be used as examples to show the benefits of synchronous closing; energizaton of grounded star capacitor bank; back-to-back switching of large capacitor banks; and fast reclosing on transmission lines

Fast switching thyristor applied in nanosecond-pulse high-voltage generator with closed transformer core.

Science.gov (United States)

Li, Lee; Bao, Chaobing; Feng, Xibo; Liu, Yunlong; Fochan, Lin

2013-02-01

For a compact and reliable nanosecond-pulse high-voltage generator (NPHVG), the specification parameter selection and potential usage of fast controllable state-solid switches have an important bearing on the optimal design. The NPHVG with closed transformer core and fast switching thyristor (FST) was studied in this paper. According to the analysis of T-type circuit, the expressions for the voltages and currents of the primary and secondary windings on the transformer core of NPHVG were deduced, and the theoretical maximum analysis was performed. For NPHVG, the rise-rate of turn-on current (di/dt) across a FST may exceed its transient rating. Both mean and maximum values of di/dt were determined by the leakage inductances of the transformer, and the difference is 1.57 times. The optimum winding ratio is helpful to getting higher voltage output with lower specification FST, especially when the primary and secondary capacitances have been established. The oscillation period analysis can be effectively used to estimate the equivalent leakage inductance. When the core saturation effect was considered, the maximum di/dt estimated from the oscillating period of the primary current is more accurate than one from the oscillating period of the secondary voltage. Although increasing the leakage inductance of NPHVG can decrease di/dt across FST, it may reduce the output peak voltage of the NPHVG.

Ultra-Low Voltage Class AB Switched Current Memory Cell

DEFF Research Database (Denmark)

Igor, Mucha

1996-01-01

This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process with thr......This paper presents the theoretical basis for the design of class AB switched current memory cells employing floating-gate MOS transistors, suitable for ultra-low-voltage applications. To support the theoretical assumptions circuits based on these cells were designed using a CMOS process...... with threshold voltages of 0.9V. Both hand calculations and PSPICE simulations showed that the cells designed allowed a maximum signal range better than +/-13 micoamp, with a supply voltage down to 1V and a quiescent bias current of 1 microamp, resulting in a very high current efficiency and effective power...

High Voltage Charge Pump

KAUST Repository

Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

2014-01-01

Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

High Voltage Charge Pump

KAUST Repository

Emira, Ahmed A.

2014-10-09

Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

Harmonic Analysis and Mitigation of Low- Frequency Switching Voltage Source Inverter with Auxiliary VSI

DEFF Research Database (Denmark)

Bai, Haofeng; Wang, Xiongfei; Blaabjerg, Frede

2018-01-01

The output currents of high-power Voltage Source Inverters (VSIs) are distorted by the switching harmonics and the background harmonics in the grid voltage. This paper presents an active harmonic filtering scheme for high-power, low-frequency switching VSIs with an additional auxiliary VSI. In th...

A Zero-Voltage Switching Control Strategy for Dual Half-Bridge Cascaded Three-Level DC/DC Converter with Balanced Capacitor Voltages

DEFF Research Database (Denmark)

Liu, Dong; Wang, Yanbo; Chen, Zhe

2017-01-01

The input capacitor's voltages are unbalanced under the conventional control strategy in a dual half-bridge cascaded three-level (TL) DC/DC converter, which would affect the high voltage stresses on the capacitors. This paper proposes a pulse-wide modulation (PWM) strategy with two working modes...... for the dual half-bridge cascaded TL DC/DC converter, which can realize the zero-voltage switching (ZVS). More significantly, a capacitor voltage balance control is proposed by alternating the two working modes of the proposed ZVS PWM strategy, which can eliminate the voltage unbalance on the four input...... capacitors. Therefore, the proposed control strategy can improve the converter's performances in: 1) reducing the switching losses and noises of the power switches; and 2) reducing the voltage stresses on the input capacitors. Finally, the simulation results are conducted to verify the proposed control...

Prediction of picosecond voltage collapse and electromagnetic wave generation in gas avalanche switches

International Nuclear Information System (INIS)

Mayhall, D.J.; Yee, J.H.; Duong-Van, M.; Villa, F.

1988-01-01

A picosecond speed switch, the Gas Avalanche Switch (GAS), has been proposed for GeV linear accelerators. The medium is gas at high pressure (100 - 700 atm). An avalanche discharge is induced between pulse-charged high voltage electrodes by electron deposition from a fast laser pulse. Avalanche electrons move to the positive electrode, causing the applied voltage to collapse in picoseconds. A two-dimensional (2D) electromagnetic electron fluid computer code calculates the avalanche evolution and voltage collapse in air for an infinite parallel plate capacitor with a 0.1 mm spacing. Calculations are done for an accelerator switch geometry consisting of a 0.7 mm wide by 0.8 mm high, rectangular, high voltage center electrode (CE) between the grounded plates of a parallel plate line of 2 mm spacing. Several variations of CE elevation and initial electron deposition are investigated The 2D character of the outgoing TEM waves is shown

Verification of the short-circuit current making capability of high-voltage switching devices

NARCIS (Netherlands)

Smeets, R.P.P.; Linden, van der W.A.

2001-01-01

Switching-in of short-circuit current leads to pre-arcing in the switching device. Pre-arcing affects the ability of switchgear to close and latch. In three-phase systems, making is associated with transient voltage phenomena that may have a significant impact on the duration of the pre-arcing

Temporary over voltages in the high voltage networks

International Nuclear Information System (INIS)

Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

2001-01-01

The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

Protection relay of phase-shifting device with thyristor switch for high voltage power transmission lines

Science.gov (United States)

Lachugin, V. F.; Panfilov, D. I.; Akhmetov, I. M.; Astashev, M. G.; Shevelev, A. V.

2014-12-01

Problems of functioning of differential current protection systems of phase shifting devices (PSD) with mechanically changed coefficient of transformation of shunt transformer are analyzed. Requirements for devices of protection of PSD with thyristor switch are formulated. Based on use of nonlinear models of series-wound and shunt transformers of PSD modes of operation of major protection during PSD, switching to zero load operation and to operation under load and during short circuit operation were studied for testing PSD with failures. Use of the principle of duplicating by devices of differential current protection (with realization of functions of breaking) of failures of separate pares of PSD with thyristor switch was substantiated. To ensure protection sensitivity to the shunt transformer winding short circuit, in particular, to a short circuit that is not implemented in the current differential protection for PSD with mechanical switch, the differential current protection reacting to the amount of primary ampere-turns of high-voltage and low-voltage winding of this transformer was designed. Studies have shown that the use of differential current cutoff instead of overcurrent protection for the shunt transformer wndings allows one to provide the sensitivity during thyristor failure with the formation of a short circuit. The results of simulation mode for the PSD with switch thyristor designed to be installed as switching point of Voskhod-Tatarskaya-Barabinsk 220 kV transmission line point out the efficiency of the developed solutions that ensure reliable functioning of the PSD.

Subnanosecond, high voltage photoconductive switching in GaAs

Energy Technology Data Exchange (ETDEWEB)

Druce, R.L.; Pocha, M.D.; Griffin, K.L. (Lawrence Livermore National Lab., CA (USA)); O' Bannon, B.J. (Rockwell International Corp., Anaheim, CA (USA))

1990-01-01

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating high-power microwaves (HPM) and for high rep-rate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanche-like mode (the optical pulse only controls switch closing). Operating in the linear mode, we have observed switch closing times of less than 200 ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lock-on modes, high fields are switched with lower laser pulse energies, resulting in higher efficiencies; but with measurable switching delay and jitter. We are currently investigating both large area (1 cm{sup 2}) and small area (<1 mm{sup 2}) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1.06 {mu}m.

Low pull-in voltage electrostatic MEMS switch using liquid dielectric

KAUST Repository

Zidan, Mohammed A.

2014-08-01

In this paper, we present an electrostatic MEMS switch with liquids as dielectric to reduce the actuation voltage. The concept is verified by simulating a lateral dual gate switch, where the required pull-in voltage is reduced by more than 8 times after using water as a dielectric, to become as low as 5.36V. The proposed switch is simulated using COMSOL multiphysics using various liquid volumes to study their effect on the switching performance. Finally, we propose the usage of the lateral switch as a single switch XOR logic gate.

Subnanosecond, high-voltage photoconductive switching in GaAs

Science.gov (United States)

Druce, Robert L.; Pocha, Michael D.; Griffin, Kenneth L.; O'Bannon, Jim

1991-03-01

We are conducting research on the switching properties of photoconductive materials to explore their potential for generating highpower microwaves (HPM) and for high reprate switching. We have investigated the performance of Gallium Arsenide (GaAs) in linear mode (the conductivity of the device follows the optical pulse) as well as an avalanchelike mode (the optical pulse only controls switch closing) . Operating in the unear mode we have observed switch closing times of less than 200 Ps with a 100 ps duration laser pulse and opening times of less than 400 ps at several kV/cm fields using neutron irradiated GaAs. In avalanche and lockon modes high fields are switched with lower laser pulse energies resulting in higher efficiencies but with measurable switching delay and jitter. We are currently investigating both large area (1 cm2) and small area 1 mm2) switches illuminated by AlGaAs laser diodes at 900 nm and Nd:YAG lasers at 1. 06 tim.

Ultra Low Voltage Class AB Switched Current Memory Cells Based on Floating Gate Transistors

DEFF Research Database (Denmark)

Mucha, Igor

1999-01-01

current memory cells were designed using a CMOS process with threshold voltages V-T0n = \\V-T0p\\ = 0.9 V for the n- and p-channel devices. Both hand calculations and PSPICE simulations showed that the designed example switched current memory cell allowed a maximum signal range better than +/-18 mu......A proposal for a class AB switched current memory cell, suitable for ultra-low-voltage applications is presented. The proposal employs transistors with floating gates, allowing to build analog building blocks for ultralow supply voltage operation also in CMOS processes with high threshold voltages....... This paper presents the theoretical basis for the design of "floating-gate'' switched current memory cells by giving a detailed description and analysis of the most important impacts degrading the performance of the cells. To support the theoretical assumptions circuits based on "floating-gate'' switched...

Cable Insulation Breakdowns in the Modulator with a Switch Mode High Voltage Power Supply

CERN Document Server

Cours, A

2004-01-01

The Advanced Photon Source modulators are PFN-type pulsers with 40 kV switch mode charging power supplies (PSs). The PS and the PFN are connected to each other by 18 feet of high-voltage (HV) cable. Another HV cable connects two separate parts of the PFN. The cables are standard 75 kV x-ray cables. All four cable connectors were designed by the PS manufacturer. Both cables were operating at the same voltage level (about 35 kV). The PS’s output connector has never failed during five years of operation. One of the other three connectors failed approximately five times more often than the others. In order to resolve the failure problem, a transient analysis was performed for all connectors. It was found that transient voltage in the connector that failed most often was subjected to more high-frequency, high-amplitude AC components than the other three connectors. It was thought that these components caused partial discharge in the connector insulation and led to the insulation breakdown. Modification o...

Reversible voltage dependent transition of abnormal and normal bipolar resistive switching.

Science.gov (United States)

Wang, Guangyu; Li, Chen; Chen, Yan; Xia, Yidong; Wu, Di; Xu, Qingyu

2016-11-14

Clear understanding the mechanism of resistive switching is the important prerequisite for the realization of high performance nonvolatile resistive random access memory. In this paper, binary metal oxide MoO x layer sandwiched by ITO and Pt electrodes was taken as a model system, reversible transition of abnormal and normal bipolar resistive switching (BRS) in dependence on the maximum voltage was observed. At room temperature, below a critical maximum voltage of 2.6 V, butterfly shaped I-V curves of abnormal BRS has been observed with low resistance state (LRS) to high resistance state (HRS) transition in both polarities and always LRS at zero field. Above 2.6 V, normal BRS was observed, and HRS to LRS transition happened with increasing negative voltage applied. Temperature dependent I-V measurements showed that the critical maximum voltage increased with decreasing temperature, suggesting the thermal activated motion of oxygen vacancies. Abnormal BRS has been explained by the partial compensation of electric field from the induced dipoles opposite to the applied voltage, which has been demonstrated by the clear amplitude-voltage and phase-voltage hysteresis loops observed by piezoelectric force microscopy. The normal BRS was due to the barrier modification at Pt/MoO x interface by the accumulation and depletion of oxygen vacancies.

Low pull-in voltage electrostatic MEMS switch using liquid dielectric

KAUST Repository

Zidan, Mohammed A.; Kosel, Jü rgen; Salama, Khaled N.

2014-01-01

In this paper, we present an electrostatic MEMS switch with liquids as dielectric to reduce the actuation voltage. The concept is verified by simulating a lateral dual gate switch, where the required pull-in voltage is reduced by more than 8 times

Optimization of Contact Force and Pull-in Voltage for Series based MEMS Switch

Directory of Open Access Journals (Sweden)

Abhijeet KSHIRSAGAR

2010-04-01

Full Text Available Cantilever based metal-to-metal contact type MEMS series switch has many applications namely in RF MEMS, Power MEMS etc. A typical MEMS switch consists of a cantilever as actuating element to make the contact between the two metal terminals of the switch. The cantilever is pulled down by applying a pull-in voltage to the control electrode that is located below the middle portion of the cantilever while only the tip portion of the cantilever makes contact between the two terminals. Detailed analysis of bending of the cantilever for different pull-in voltages reveals some interesting facts. At low pull-in voltage the cantilever tip barely touches the two terminals, thus resulting in very less contact area. To increase contact area a very high pull-in voltage is applied, but it lifts the tip from the free end due to concave curving of the cantilever in the middle region of the cantilever where the electrode is located. Again it results in less contact area. Furthermore, the high pull-in voltage produces large stress at the base of the cantilever close to the anchor. Therefore, an optimum, pull-in voltage must exist at which the concave curving is eliminated and contact area is maximum. In this paper authors report the finding of optimum contact force and pull-in voltage.

Reducing Ripple In A Switching Voltage Regulator

Science.gov (United States)

Paulkovich, John; Rodriguez, G. Ernest

1994-01-01

Ripple voltage in output of switching voltage regulator reduced substantially by simple additional circuitry adding little to overall weight and size of regulator. Heretofore, additional filtering circuitry needed to obtain comparable reductions in ripple typically as large and heavy as original regulator. Current opposing ripple current injected into filter capacitor.

Fast response double series resonant high-voltage DC-DC converter

International Nuclear Information System (INIS)

Lee, S S; Iqbal, S; Kamarol, M

2012-01-01

In this paper, a novel double series resonant high-voltage dc-dc converter with dual-mode pulse frequency modulation (PFM) control scheme is proposed. The proposed topology consists of two series resonant tanks and hence two resonant currents flow in each switching period. Moreover, it consists of two high-voltage transformer with the leakage inductances are absorbed as resonant inductor in the series resonant tanks. The secondary output of both transformers are rectified and mixed before supplying to load. In the resonant mode operation, the series resonant tanks are energized alternately by controlling two Insulated Gate Bipolar Transistor (IGBT) switches with pulse frequency modulation (PFM). This topology operates in discontinuous conduction mode (DCM) with all IGBT switches operating in zero current switching (ZCS) condition and hence no switching loss occurs. To achieve fast rise in output voltage, a dual-mode PFM control during start-up of the converter is proposed. In this operation, the inverter is started at a high switching frequency and as the output voltage reaches 90% of the target value, the switching frequency is reduced to a value which corresponds to the target output voltage. This can effectively reduce the rise time of the output voltage and prevent overshoot. Experimental results collected from a 100-W laboratory prototype are presented to verify the effectiveness of the proposed system.

Voltage-Driven Magnetization Switching and Spin Pumping in Weyl Semimetals

Science.gov (United States)

Kurebayashi, Daichi; Nomura, Kentaro

2016-10-01

We demonstrate electrical magnetization switching and spin pumping in magnetically doped Weyl semimetals. The Weyl semimetal is a three-dimensional gapless topological material, known to have nontrivial coupling between the charge and the magnetization due to the chiral anomaly. By solving the Landau-Lifshitz-Gilbert equation for a multilayer structure of a Weyl semimetal, an insulator and a metal while taking the charge-magnetization coupling into account, magnetization dynamics is analyzed. It is shown that the magnetization dynamics can be driven by the electric voltage. Consequently, switching of the magnetization with a pulsed electric voltage can be achieved, as well as precession motion with an applied oscillating electric voltage. The effect requires only a short voltage pulse and may therefore be energetically favorable for us in spintronics devices compared to conventional spin-transfer torque switching.

Statistical study of overvoltages by maneuvering in switches in high voltage using EMTP-RV

International Nuclear Information System (INIS)

Dominguez Herrera, Diego Armando

2013-01-01

The transient overvoltages produced by maneuvering of switches are studied in a statistical way and through a variation the sequential closing times of switches in networks larger than 230 kV. This study is performed according to time delays and typical deviation ranges, using the tool EMTP- RV (ElectroMagnetic Trasient Program Restructured Version). A conceptual framework related with the electromagnetic transients by maneuver is developed in triphasic switches installed in nominal voltages higher than 230 kV. The methodology established for the execution of statistical studies of overvoltages by switch maneuver is reviewed and evaluated by simulating two fictitious cases in EMTP-RV [es

Analysis of bi-directional piezoelectric-based converters for zero-voltage switching operation

DEFF Research Database (Denmark)

Ekhtiari, Marzieh; Zhang, Zhe; Andersen, Michael A. E.

2016-01-01

This paper deals with a thorough analysis of zerovoltage switching especially for bi-directional, inductorless, piezoelectric transformer-based switch-mode power supplies with a half-bridge topology. Practically, obtaining zero-voltage switching for all of the switches in a bi-directional piezoel......This paper deals with a thorough analysis of zerovoltage switching especially for bi-directional, inductorless, piezoelectric transformer-based switch-mode power supplies with a half-bridge topology. Practically, obtaining zero-voltage switching for all of the switches in a bi......-directional piezoelectric power converter is a difficult task. However, the analysis in this work will be convenient for overcoming this challenge. The analysis defines the zero-voltage region indicating the operating points whether or not soft switching can be met over the switching frequency and load range. For the first...... time, a comprehensive analysis is provided, which can be used as a design guideline for applying control techniques in order to drive switches in piezoelectric transformer-based converters. This study further conveys the proposed method to the region where all the switches can obtain soft switching...

dc analysis and design of zero-voltage-switched multi-resonant converters

Science.gov (United States)

Tabisz, Wojciech A.; Lee, Fred C.

Recently introduced multiresonant converters (MRCs) provide zero-voltage switching (ZVS) of both active and passive switches and offer a substantial reduction of transistor voltage stress and an increase of load range, compared to their quasi-resonant converter counterparts. Using the resonant switch concept, a simple, generalized analysis of ZVS MRCs is presented. The conversion ratio and voltage stress characteristics are derived for basic ZVS MRCs, including buck, boost, and buck/boost converters. Based on the analysis, a design procedure that optimizes the selection of resonant elements for maximum conversion efficiency is proposed.

Low prepulse, high power density water dielectric switching

International Nuclear Information System (INIS)

Johnson, D.L.; VanDevender, J.P.; Martin, T.H.

1979-01-01

Prepulse voltage suppression has proven difficult in high power, high voltage accelerators employing self-breakdown water dielectric switches. A novel and cost effective water switch has been developed at Sandia Laboratories which reduces prepulse voltage by reducing the capacity across the switch. This prepulse suppression switch causes energy formerly stored in the switch capacity and dissipated in the arc to be useful output energy. The switching technique also allows the pulse forming lines to be stacked in parallel and electrically isolated from the load after the line has been discharged. The switch consists of a ground plane, with several holes, inserted between the switch electrodes. The output line switch electrodes extend through the holes and face electrodes on the pulse forming line (PFL). The capacity between the PFL and the output transmission line is reduced by about 80%. The gap spacing between the output line electrode and the hole in the ground plane is adjusted so that breakdown occurs after the main pulse and provides a crow bar between the load and the source. Performance data from the Proto II, Mite and Ripple test facilities are presented

Low Voltage Current Mode Switched-Current-Mirror Mixer

Directory of Open Access Journals (Sweden)

Chunhua Wang

2009-09-01

Full Text Available A new CMOS active mixer topology can operate at 1 V supply voltage by use of SCM (switched currentmirror. Such current-mode mixer requires less voltage headroom with good linearization. Mixing is achieved with four improved current mirrors, which are alternatively activated. For ideal switching, the operation is equivalent to a conventional active mixer. This paper analyzes the performance of the SCM mixer, in comparison with the conventional mixer, demonstrating competitive performance at a lower supply voltage. Moreover, the new mixer’s die, without any passive components, is very small, and the conversion gain is easy to adjust. An experimental prototype was designed and simulated in standard chartered 0.18μm RF CMOS Process with Spectre in Cadence Design Systems. Experimental results show satisfactory mixer performance at 2.4 GHz.

Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

Science.gov (United States)

Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

Isolated DC-DC Converter for Bidirectional Power Flow Controlling with Soft-Switching Feature and High Step-Up/Down Voltage Conversion

Directory of Open Access Journals (Sweden)

Chih-Lung Shen

2017-03-01

Full Text Available In this paper, a novel isolated bidirectional DC-DC converter is proposed, which is able to accomplish high step-up/down voltage conversion. Therefore, it is suitable for hybrid electric vehicle, fuel cell vehicle, energy backup system, and grid-system applications. The proposed converter incorporates a coupled inductor to behave forward-and-flyback energy conversion for high voltage ratio and provide galvanic isolation. The energy stored in the leakage inductor of the coupled inductor can be recycled without the use of additional snubber mechanism or clamped circuit. No matter in step-up or step-down mode, all power switches can operate with soft switching. Moreover, there is a inherit feature that metal–oxide–semiconductor field-effect transistors (MOSFETs with smaller on-state resistance can be adopted because of lower voltage endurance at primary side. Operation principle, voltage ratio derivation, and inductor design are thoroughly described in this paper. In addition, a 1-kW prototype is implemented to validate the feasibility and correctness of the converter. Experimental results indicate that the peak efficiencies in step-up and step-down modes can be up to 95.4% and 93.6%, respectively.

High Efficiency Single Output ZVS-ZCS Voltage Doubled Flyback Converter

Science.gov (United States)

Kaliyaperumal, Deepa; Saju, Hridya Merin; Kumar, M. Vijaya

2016-06-01

A switch operating at high switching frequency increases the switching losses of the converter resulting in lesser efficiency. Hence this paper proposes a new topology which has resonant switches [zero voltage switching (ZVS)] in the primary circuit to eliminate the above said disadvantages, and voltage doubler zero current switching (ZCS) circuit in the secondary to double the output voltage, and hence the output power, power density and efficiency. The design aspects of the proposed topology for a single output of 5 V at 50 kHz, its simulation and hardware results are discussed in detail. The analysis of the results obtained from a 2.5 W converter reveals the superiority of the proposed converter.

A soft switching with reduced voltage stress ZVT-PWM full-bridge converter

Science.gov (United States)

Sahin, Yakup; Ting, Naim Suleyman; Acar, Fatih

2018-04-01

This paper introduces a novel active snubber cell for soft switching pulse width modulation DC-DC converters. In the proposed converter, the main switch is turned on under zero voltage transition and turned off under zero voltage switching (ZVS). The auxiliary switch is turned on under zero current switching (ZCS) and turned off under zero current transition. The main diode is turned on under ZVS and turned off under ZCS. All of the other semiconductors in the converter are turned on and off with soft switching. There is no extra voltage stress on the semiconductor devices. Besides, the proposed converter has simple structure and ease of control due to common ground. The detailed theoretical analysis of the proposed converter is presented and also verified with both simulation and experimental study at 100 kHz switching frequency and 600 W output power. Furthermore, the efficiency of the proposed converter is 95.7% at nominal power.

High voltage generator circuit with low power and high efficiency applied in EEPROM

International Nuclear Information System (INIS)

Liu Yan; Zhang Shilin; Zhao Yiqiang

2012-01-01

This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V th ) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. (semiconductor integrated circuits)

High-frequency high-voltage high-power DC-to-DC converters

Science.gov (United States)

Wilson, T. G.; Owen, H. A.; Wilson, P. M.

1982-09-01

A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

A Component-Reduced Zero-Voltage Switching Three-Level DC-DC Converter

DEFF Research Database (Denmark)

Qin, Zian; Pang, Ying; Wang, Huai

2016-01-01

The basic Zero-Voltage Switching (ZVS) three-level DC-DC converter has one clamping capacitor to realize the ZVS of the switches, and two clamping diodes to clamp the voltage of the clamping capacitor. In order to reduce the reverse recovery loss of the diode as well as its cost, this paper...... proposes to remove one of the clamping diodes in basic ZVS three-level DC-DC converter. With less components, the proposed converter can still have a stable clamping capacitor voltage, which is clamped at half of the dc link voltage. Moreover, the ZVS performance will be influenced by removing the clamping...

Integrated Three-Voltage-Booster DC-DC Converter to Achieve High Voltage Gain with Leakage-Energy Recycling for PV or Fuel-Cell Power Systems

Directory of Open Access Journals (Sweden)

Chih-Lung Shen

2015-09-01

Full Text Available In this paper, an integrated three-voltage-booster DC-DC (direct current to direct current converter is proposed to achieve high voltage gain for renewable-energy generation systems. The proposed converter integrates three voltage-boosters into one power stage, which is composed of an active switch, a coupled-inductor, five diodes, and five capacitors. As compared with conventional high step-up converters, it has a lower component count. In addition, the features of leakage-energy recycling and switching loss reduction can be accomplished for conversion efficiency improvement. While the active switch is turned off, the converter can inherently clamp the voltage across power switch and suppress voltage spikes. Moreover, the reverse-recovery currents of all diodes can be alleviated by leakage inductance. A 200 W prototype operating at 100 kHz switching frequency with 36 V input and 400 V output is implemented to verify the theoretical analysis and to demonstrate the feasibility of the proposed high step-up DC-DC converter.

A Switched-Capacitor Based High Conversion Ratio Converter for Renewable Energy Applications

DEFF Research Database (Denmark)

Li, Kerui; Yin, Zhijian; Yang, Yongheng

2017-01-01

A high step-up switched-capacitor based converter is proposed in this paper. The proposed converter features high conversion ratio, low voltage stress and continuous input current, which makes it very suitable for renewable energy applications like photovoltaic systems. More importantly...... voltage gain, low voltage stress on the switches, continuous input current, and relatively high efficiency....

Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

Directory of Open Access Journals (Sweden)

Chih-Lung Shen

2016-10-01

Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

Simulation and analysis of transient over voltages due to capacitor banks switching

International Nuclear Information System (INIS)

Jadid, Sh.; Yazdanpanah, D.

2002-01-01

The switching of any capacitor bank produces over voltages. Transient overvoltage will always occur in the switching device, the switching of shunt capacitor bank has become the most common source of transient voltage on power systems. Transient over voltages due to switching the capacitor bands hurt not only to the capacitor banks, but also to other equipment, such as circuit breakers and transformers. Several methods are available for reducing energising transients. These devices include pre-insertion resistors, pre-insertion inductors,synchronous closing, and MOV arresters. However, not all are practical or economical. The other important problem is existence of capacitor banks in presence of harmonics.Capacitors do not produce harmonics;however,the addition of capacitors to the electrical system will change the frequency response characteristics of the system will change the frequency response characteristics of the system, and in some cases can result in magnification of the voltage and current distortion in the system. In other word in presence of harmonic-producing loads,the capacitors used for power factor correction,may cause parallel resonance with the system inductance, so they increase the total harmonic distortion of voltage and current waveforms

Computerized precision control of a synchronous high voltage discharge switch for the beam separation system of the LEP e+/e- collider

International Nuclear Information System (INIS)

Dieperink, J.H.; Finnigan, A.; Kalbreier, W.; Keizer, R.L.; Laffin, M.; Mertens, V.

1989-01-01

Electrostatic separators are used to separate the beams in LEP. The counter-rotating beams are eventually brought into collision in the four low beta insertions, using switches to discharge simultaneously four high voltage (HV) circuits. Each switch consists of four spark gaps mounted in a pressure vessel. A reduction of the gap widths below the self ignition instance by electric motors results in the initiation of the discharges. Synchronization is ensured by the electrical coupling of the electrodes connected to the ground. The design and performance of the computerized precision control of the discharge switch are described. The dynamic characteristics of the prototype switch are also presented. 5 refs., 5 figs

Avalanche mode of high-voltage overloaded p+–i–n+ diode switching to the conductive state by pulsed illumination

International Nuclear Information System (INIS)

Kyuregyan, A. S.

2015-01-01

A simple analytical theory of the picosecond switching of high-voltage overloaded p + –i–n + photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs

High-power semiconductor RSD-based switch

Energy Technology Data Exchange (ETDEWEB)

Bezuglov, V G; Galakhov, I V; Grusin, I A [All-Russian Scientific Research Inst. of Experimental Physics, Sarov (Russian Federation); and others

1997-12-31

The operating principle and test results of a high-power semiconductor RSD-based switch with the following operating parameters is described: operating voltage 25 kV, peak operating current 200 kA, maximum transferred charge 70 C. The switch is intended for use by high-power capacitor banks of state-of-the-art research facilities. The switch was evaluated for applicability in commercial pulsed systems. The possibility of increasing the peak operating current to 500 kA is demonstrated. (author). 4 figs., 2 refs.

Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

Directory of Open Access Journals (Sweden)

Yong Chen

2016-01-01

Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

A Switched Capacitor Based AC/DC Resonant Converter for High Frequency AC Power Generation

Directory of Open Access Journals (Sweden)

Cuidong Xu

2015-09-01

Full Text Available A switched capacitor based AC-DC resonant power converter is proposed for high frequency power generation output conversion. This converter is suitable for small scale, high frequency wind power generation. It has a high conversion ratio to provide a step down from high voltage to low voltage for easy use. The voltage conversion ratio of conventional switched capacitor power converters is fixed to n, 1/n or −1/n (n is the switched capacitor cell. In this paper, A circuit which can provide n, 1/n and 2n/m of the voltage conversion ratio is presented (n is stepping up the switched capacitor cell, m is stepping down the switching capacitor cell. The conversion ratio can be changed greatly by using only two switches. A resonant tank is used to assist in zero current switching, and hence the current spike, which usually exists in a classical switching switched capacitor converter, can be eliminated. Both easy operation and efficiency are possible. Principles of operation, computer simulations and experimental results of the proposed circuit are presented. General analysis and design methods are given. The experimental result verifies the theoretical analysis of high frequency AC power generation.

A soft-switching coupled inductor bidirectional DC-DC converter with high-conversion ratio

Science.gov (United States)

Chao, Kuei-Hsiang; Jheng, Yi-Cing

2018-01-01

A soft-switching bidirectional DC-DC converter is presented herein as a way to improve the conversion efficiency of a photovoltaic (PV) system. Adoption of coupled inductors enables the presented converter not only to provide a high-conversion ratio but also to suppress the transient surge voltage via the release of the energy stored in leakage flux of the coupled inductors, and the cost can kept down consequently. A combined use of a switching mechanism and an auxiliary resonant branch enables the converter to successfully perform zero-voltage switching operations on the main switches and improves the efficiency accordingly. It was testified by experiments that our proposed converter works relatively efficiently in full-load working range. Additionally, the framework of the converter intended for testifying has high-conversion ratio. The results of a test, where a generating system using PV module array coupled with batteries as energy storage device was used as the low-voltage input side, and DC link was used as high-voltage side, demonstrated our proposed converter framework with high-conversion ratio on both high-voltage and low-voltage sides.

A 380 V High Efficiency and High Power Density Switched-Capacitor Power Converter using Wide Band Gap Semiconductors

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2018-01-01

. This paper presents such a high voltage low power switched-capacitor DC-DC converter with an input voltage upto 380 V (compatible with rectified European mains) and an output power experimentally validated up to 21.3 W. The wideband gap semiconductor devices of GaN switches and SiC diodes are combined...... to compose the proposed power stage. Their switching and loss characteristics are analyzed with transient waveforms and thermal images. Different isolated driving circuits are compared and a compact isolated halfbridge driving circuit is proposed. The full-load efficiencies of 98.3% and 97.6% are achieved......State-of-the-art switched-capacitor DC-DC power converters mainly focus on low voltage and/or high power applications. However, at high voltage and low power levels, new designs are anticipated to emerge and a power converter that has both high efficiency and high power density is highly desirable...

Thickness independent reduced forming voltage in oxygen engineered HfO{sub 2} based resistive switching memories

Energy Technology Data Exchange (ETDEWEB)

Sharath, S. U., E-mail: sharath@oxide.tu-darmstadt.de; Kurian, J.; Komissinskiy, P.; Hildebrandt, E.; Alff, L. [Institute of Materials Science, Technische Universität Darmstadt, 64287 Darmstadt (Germany); Bertaud, T.; Walczyk, C.; Calka, P. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Schroeder, T. [IHP, Im Technologiepark 25, 15236 Frankfurt Oder (Germany); Brandenburgische Technische Universität, Konrad-Zuse-Strasse 1, 03046 Cottbus (Germany)

2014-08-18

The conducting filament forming voltage of stoichiometric hafnium oxide based resistive switching layers increases linearly with layer thickness. Using strongly reduced oxygen deficient hafnium oxide thin films grown on polycrystalline TiN/Si(001) substrates, the thickness dependence of the forming voltage is strongly suppressed. Instead, an almost constant forming voltage of about 3 V is observed up to 200 nm layer thickness. This effect suggests that filament formation and switching occurs for all samples in an oxidized HfO{sub 2} surface layer of a few nanometer thickness while the highly oxygen deficient thin film itself merely serves as a oxygen vacancy reservoir.

Functional model of a high-current high-voltage superconducting switches

International Nuclear Information System (INIS)

Menke, Kh.; Shishov, Yu.A.

1977-01-01

Considered are problems of superconducting switches (SS) for energy extraction from magnets at a current of several kiloamperes and a voltage of several kilovolts with a time for transition to the normal state of <0.5 ms. SS is made of a wire of 0.5 mm diameter containing 19 strands of Nb-Ti alloy of 65 μm diameter. The wire matrix was etched out, 19 wires of 4.5 m length were braided together. On each of three groups of wires a heater wire of constantan of 0.12 mm diameter and 6 m length was wound. A second heater intended for slow heating during current feeding into the magnet, is wound over the braid. The wires and heaters are parallel connected and impregnated by an epoxy compound. The following main parameters were obtained in SS testing: critical current of 920 A, resistance in the normal state of 2.5 Ohm, and minimum delay time of 0.2 ms at a nominal current of 0.8 of the critical one

A zero-voltage-switched three-phase interleaved buck converter

Science.gov (United States)

Hsieh, Yao-Ching; Huang, Bing-Siang; Lin, Jing-Yuan; Pham, Phu Hieu; Chen, Po-Hao; Chiu, Huang-Jen

2018-04-01

This paper proposes a three-phase interleaved buck converter which is composed of three identical paralleled buck converters. The proposed solution has three shunt inductors connected between each other of three basic buck conversion units. With the help of the shunt inductors, the MOSFET parasitic capacitances will resonate to achieve zero-voltage-switching. Furthermore, the decreasing rate of the current through the free-wheeling diodes is limited, and therefore, their reverse-recovery losses can be minimised. The active power switches are controlled by interleaved pulse-width modulation signals to reduce the input and output current ripples. Therefore, the filtering capacitances on the input and output sides can be reduced. The power efficiency is measured to be as high as 98% in experiment with a prototype circuit.

High-voltage pulse generator synchronous with LINAC

International Nuclear Information System (INIS)

Muto, M.; Hiratsuka, Yoshio; Niimura, Nobuo

1974-01-01

High-voltage pulse generator (H.V. Flip-Flop) No.2, an improved type of No.1, is described, which is used in the structural analysis of transient phenomena in materials through the neutron TOF with a Linac. The method of producing positive and negative high-voltage pulses synchronous with the Linac is identical with that in No.1. However, No.2 has outstanding features as follows: (1) The rise time of output pulses is reduced to 0.3 msec, due to the improvement of switching circuit and the winding of a step-up transformer; (2) The widths of positive and negative pulses are variable up to maximum 8 and 16 frames, respectively (One frame = 10 msec); (3) The distribution of TOF signals from a BF 3 counter to a time analyzer is possible even in the negative voltage duration. The panel is provided with the switches for choosing pulse width and the frame for analysis, as well as the dials for setting positive/negative pulse voltage values and the respective indicating meters. (Mori, K)

Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion

International Nuclear Information System (INIS)

Murray, C.S.; El-Genk, M.S.

1994-02-01

A low voltage/high current switch refer-red as ''Cs-Ba tacitron'' is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM 2 , switch power density of 1 kW/cm 2 , and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V

Room temperature resistive state switching with hysteresis in GdMnO3 thin film with low threshold voltage

International Nuclear Information System (INIS)

Nath, Rajib; Raychaudhuri, A. K.; Mukovskii, Ya. M.; Andreev, N.; Chichkov, Vladimir

2014-01-01

In this paper, we report a room temperature resistive state switching with hysteresis, in a thin film of GdMnO 3 grown on NdGaO 3 substrate. The switched states have a resistance ratio ≈10 3 . The switching is unipolar in nature, with a low set voltage <3 V, while the reset voltage <0.3 V. The switching occurs between a high resistance polaronic insulating state and a low resistance metallic state. The resistance state transition has been ascribed to an electronic mechanism that originates from co-existing phases (created by charge disproportionation) that can undergo a percolative transition enabled by the applied bias

Design and realization of high voltage disconnector condition monitoring system

Science.gov (United States)

Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

2017-08-01

The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

Novel Step-Up DC/DC Converter with No Right Half Plane Zero and Reduced Switched Voltage Stress Characteristics

DEFF Research Database (Denmark)

Mostaan, Ali; Alizadeh, Ebrahim; Soltani, Mohsen

2014-01-01

and the voltage transfer gain is obtained. It is also demonstrated that the voltage stress on all semiconductor devices is restricted to input voltage which allows the utilization of a power switch with lower drain source resistance. In order to further increase the voltage gain another switched capacitor voltage......Novel step-up DC/DC converter is introduced in this paper. This converter is realized with adding the switched capacitor voltage multiplier cell to the three switch step-down DC/DC converter that has been proposed in the literature. The proposed converter is analyzed in the steady state...

A Four-Phase High Voltage Conversion Ratio Bidirectional DC-DC Converter for Battery Applications

Directory of Open Access Journals (Sweden)

Li-Kun Xue

2015-06-01

Full Text Available This study presents a four-phase interleaved high voltage conversion ratio bidirectional DC-DC converter circuit based on coupled inductors and switched capacitors, which can eliminate the defects of conventional high voltage conversion ratio bidirectional DC-DC converters in terms of high-voltage/current stress, less efficiency and low-power limitation. Parallel channels are used to reduce current stress at the low-voltage side and series connected switched capacitors are used to enlarge voltage conversion ratio, reduce voltage stress and achieve auto current sharing. This paper proposes the operation principle, feature analysis and optimization design considerations. On this basis the objectives of high voltage conversion ratio, low voltage/current stress, high power density, high efficiency and high-power applications can be achieved. Some experimental results based on a 500 W prototype converter (24 V to 48 V at low-voltage side, 400 V at high-voltage side are given to verify the theoretical analysis and the effectiveness of the proposed converter.

A High Voltage Swing 1.9 GHz PA in Standard CMOS

NARCIS (Netherlands)

Aartsen, W.A.J.; Annema, Anne J.; Nauta, Bram

2002-01-01

A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a

Avalanche mode of high-voltage overloaded p{sup +}–i–n{sup +} diode switching to the conductive state by pulsed illumination

Energy Technology Data Exchange (ETDEWEB)

Kyuregyan, A. S., E-mail: ask@vei.ru [Lenin All-Russia Electrical Engineering Institute (Russian Federation)

2015-07-15

A simple analytical theory of the picosecond switching of high-voltage overloaded p{sup +}–i–n{sup +} photodiodes to the conductive state by pulsed illumination is presented. The relations between the parameters of structure, light pulse, external circuit, and main process characteristics, i.e., the amplitude of the active load current pulse, delay time, and switching duration, are derived and confirmed by numerical simulation. It is shown that the picosecond light pulse energy required for efficient switching can be decreased by 6–7 orders of magnitude due to the intense avalanche multiplication of electrons and holes. This offers the possibility of using pulsed semiconductor lasers as a control element of optron pairs.

A compact, all solid-state LC high voltage generator.

Science.gov (United States)

Fan, Xuliang; Liu, Jinliang

2013-06-01

LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

Advanced concept for a medium-voltage switch gear; Neues Konzept einer Mittelspannungsschaltanlage

Energy Technology Data Exchange (ETDEWEB)

Buescher, A.; Wahle, A. [Areva Energietechnik GmbH, Regensburg (Germany). Sachsenwerk Mittelspannung

2008-03-15

The new series GHA of medium-voltage switch gears have advantages due to sulfur hexafluorides avoidance during operation of the service life. An ergonomic display device enables simple handling and reliable switching processes. (GL)

On-chip high-voltage generator design design methodology for charge pumps

CERN Document Server

Tanzawa, Toru

2016-01-01

This book provides various design techniques for switched-capacitor on-chip high-voltage generators, including charge pump circuits, regulators, level shifters, references, and oscillators.  Readers will see these techniques applied to system design in order to address the challenge of how the on-chip high-voltage generator is designed for Flash memories, LCD drivers, and other semiconductor devices to optimize the entire circuit area and power efficiency with a low voltage supply, while minimizing the cost.  This new edition includes a variety of useful updates, including coverage of power efficiency and comprehensive optimization methodologies for DC-DC voltage multipliers, modeling of extremely low voltage Dickson charge pumps, and modeling and optimum design of AC-DC switched-capacitor multipliers for energy harvesting and power transfer for RFID.

Wideband Electrostatic Vibration Energy Harvester (e-VEH) Having a Low Start-Up Voltage Employing a High-Voltage Integrated Interface

International Nuclear Information System (INIS)

Dudka, A; Galayko, D; Basset, P; Cottone, F; Blokhina, E

2013-01-01

This paper reports on an electrostatic Vibration Energy Harvester (e-VEH) system, for which the energy conversion process is initiated with a low bias voltage and is compatible with wideband stochastic external vibrations. The system employs the auto-synchronous conditioning circuit topology with the use of a novel dedicated integrated low-power high-voltage switch that is needed to connect the charge pump and flyback – two main parts of the used conditioning circuit. The proposed switch is designed and implemented in AMS035HV CMOS technology. Thanks to the proposed switch device, which is driven with a low-voltage ground-referenced logic, the e-VEH system may operate within a large voltage range, from a pre-charge low voltage up to several tens volts. With such a high-voltage e-VEH operation, it is possible to obtain a strong mechanical coupling and a high rate of vibration energy conversion. The used transducer/resonator device is fabricated with a batch-processed MEMS technology. When excited with stochastic vibrations having an acceleration level of 0.8 g rms distributed in the band 110–170 Hz, up to 0.75 μW of net electrical power has been harvested with our system. This work presents an important milestone in the challenge of designing a fully integrated smart conditioning interface for the capacitive e-VEHs

Mobile medium-voltage switching system. Temporary standby power supply in record time; Mobile Mittelspannungsschaltanlage. Vorlaeufige Wiederversorgung in Rekordzeit

Energy Technology Data Exchange (ETDEWEB)

Thiery, Matthias; Schwarz, Stefan [Siemens AG, Mannheim (Germany); Wingerter, Dieter [BASF SE, Ludwigshafen (Germany); Doering, Holger [B. Goebel und Sohn GmbH, Asschaffenburg (Germany). Fahrzeugbau

2011-02-28

BASF SE Ludwigshafen operates more than 100 medium-voltage switching stations for power supply to its plants. The complexity of the production plants and production method make it necessary to have immediate standby power supply in case of interruption of a medium-voltage switching station. For this purpose, a transportable emergency container was acquired that contains a medium-voltage switching system. Power can be supplied at very short notice, simply by plugging the necessary cable connections. No cranes or other tools are required for installation. The emergency container is designed for use at varying voltage levels and can be transported by road to other BASF sites in Europe. The switching station is a gas-insulated medium-voltage switching station 8DA10 by Siemens, designed for operating voltages of 6, 10, 20, and 35 kW.

An Enhanced Three-Level Voltage Switching State Scheme for Direct Torque Controlled Open End Winding Induction Motor

Science.gov (United States)

Kunisetti, V. Praveen Kumar; Thippiripati, Vinay Kumar

2018-01-01

Open End Winding Induction Motors (OEWIM) are popular for electric vehicles, ship propulsion applications due to less DC link voltage. Electric vehicles, ship propulsions require ripple free torque. In this article, an enhanced three-level voltage switching state scheme for direct torque controlled OEWIM drive is implemented to reduce torque and flux ripples. The limitations of conventional Direct Torque Control (DTC) are: possible problems during low speeds and starting, it operates with variable switching frequency due to hysteresis controllers and produces higher torque and flux ripple. The proposed DTC scheme can abate the problems of conventional DTC with an enhanced voltage switching state scheme. The three-level inversion was obtained by operating inverters with equal DC-link voltages and it produces 18 voltage space vectors. These 18 vectors are divided into low and high frequencies of operation based on rotor speed. The hardware results prove the validity of proposed DTC scheme during steady-state and transients. From simulation and experimental results, proposed DTC scheme gives less torque and flux ripples on comparison to two-level DTC. The proposed DTC is implemented using dSPACE DS-1104 control board interface with MATLAB/SIMULINK-RTI model.

High-Voltage MOSFET Switching Circuit

Science.gov (United States)

Jensen, Kenneth A.

1995-01-01

Circuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.

Multi-Port High Voltage Gain Modular Power Converter for Offshore Wind Farms

Directory of Open Access Journals (Sweden)

Sen Song

2018-06-01

Full Text Available In high voltage direct current (HVDC power transmission of offshore wind power systems, DC/DC converters are applied to transfer power from wind generators to HVDC terminals, and they play a crucial role in providing a high voltage gain, high efficiency, and high fault tolerance. This paper introduces an innovative multi-port DC/DC converter with multiple modules connected in a scalable matrix configuration, presenting an ultra-high voltage step-up ratio and low voltage/current rating of components simultaneously. Additionally, thanks to the adoption of active clamping current-fed push–pull (CFPP converters as sub-modules (SMs, soft-switching is obtained for all power switches, and the currents of series-connected CFPP converters are auto-balanced, which significantly reduce switching losses and control complexity. Furthermore, owing to the expandable matrix structure, the output voltage and power of a modular converter can be controlled by those of a single SM, or by adjusting the column and row numbers of the matrix. High control flexibility improves fault tolerance. Moreover, due to the flexible control, the proposed converter can transfer power directly from multiple ports to HVDC terminals without bus cable. In this paper, the design of the proposed converter is introduced, and its functions are illustrated by simulation results.

High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

Science.gov (United States)

Shimer, Daniel W.; Lange, Arnold C.

1995-01-01

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

Science.gov (United States)

Shimer, D.W.; Lange, A.C.

1995-05-23

A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

Transformer-assisted PWM zero-voltage switching pole inverter with high output bandwidth applied to linear motor drives

NARCIS (Netherlands)

Myrzik, J.M.A.; Duarte, J.L.; Haardt, de P.; Vissers, J.

2002-01-01

An application of the transformer-assisted PWM zero-voltage switching pole inverter (TRAP) is described in this paper. The TRAP is based on the auxiliary resonant commutated pole inverter (ARCP), but avoids its disadvantages. This paper describes the converter functionality and its applicability

Pseudospark switches

International Nuclear Information System (INIS)

Billault, P.; Riege, H.; Gulik, M. van; Boggasch, E.; Frank, K.

1987-01-01

The pseudospark discharge is bound to a geometrical structure which is particularly well suited for switching high currents and voltages at high power levels. This type of discharge offers the potential for improvement in essentially all areas of switching operation: peak current and current density, current rise, stand-off voltage, reverse current capability, cathode life, and forward drop. The first pseudospark switch was built at CERN at 1981. Since then, the basic switching characteristics of pseudospark chambers have been studied in detail. The main feature of a pseudospark switch is the confinement of the discharge plasma to the device axis. The current transition to the hollow electrodes is spread over a rather large surface area. Another essential feature is the easy and precise triggering of the pseudospark switch from the interior of the hollow electrodes, relatively far from the main discharge gap. Nanosecond delay and jitter values can be achieved with trigger energies of less than 0.1 mJ, although cathode heating is not required. Pseudospark gaps may cover a wide range of high-voltage, high-current, and high-pulse-power switching at repetition rates of many kilohertz. This report reviews the basic researh on pseudospark switches which has been going on at CERN. So far, applications have been developed in the range of thyratron-like medium-power switches at typically 20 to 40 kV and 0.5 to 10 kA. High-current pseudospark switches have been built for a high-power 20 kJ pulse generator which is being used for long-term tests of plasma lenses developed for the future CERN Antiproton Collector (ACOL). The high-current switches have operated for several hundred thousand shots, with 20 to 50 ns jitter at 16 kV charging voltage and more than 100 kA peak current amplitude. (orig.)

An Original Transformer and Switched-Capacitor (T & SC-Based Extension for DC-DC Boost Converter for High-Voltage/Low-Current Renewable Energy Applications: Hardware Implementation of a New T & SC Boost Converter

Directory of Open Access Journals (Sweden)

Sanjeevikumar Padmanaban

2018-03-01

Full Text Available In this article a new Transformer and Switched Capacitor-based Boost Converter (T & SC-BC is proposed for high-voltage/low-current renewable energy applications. The proposed T & SC-BC is an original extension for DC-DC boost converter which is designed by utilizing a transformer and switched capacitor (T & SC. Photovoltaic (PV energy is a fast emergent segment among the renewable energy systems. The proposed T & SC-BC combines the features of the conventional boost converter and T & SC to achieve a high voltage conversion ratio. A Maximum Power Point Tracking (MPPT controller is compulsory and necessary in a PV system to extract maximum power. Thus, a photovoltaic MPPT control mechanism also articulated for the proposed T & SC-BC. The voltage conversion ratio (Vo/Vin of proposed converter is (1 + k/(1 − D where, k is the turns ratio of the transformer and D is the duty cycle (thus, the converter provides 9.26, 13.88, 50/3 voltage conversion ratios at 78.4 duty cycle with k = 1, 2, 2.6, respectively. The conspicuous features of proposed T & SC-BC are: (i a high voltage conversion ratio (Vo/Vin; (ii continuous input current (Iin; (iii single switch topology; (iv single input source; (v low drain to source voltage (VDS rating of control switch; (vi a single inductor and a single untapped transformer are used. Moreover, the proposed T & SC-BC topology was compared with recently addressed DC-DC converters in terms of number of components, cost, voltage conversion ratio, ripples, efficiency and power range. Simulation and experimental results are provided which validate the functionality, design and concept of the proposed approach.

130 kV 130 A High voltage switching mode power supply for neutral beam plasma heating: design issues

International Nuclear Information System (INIS)

Ganuza, D.; Del Rio, J.M.; Garcia, I.; Garcia, F.; Garcia de Madinabeitia, P.; Perez, A.; Zabaleta, J.R.

2003-01-01

The company JEMA has designed and manufactured two High Voltage Switching Mode Power Supplies (HVSMPS), rated at 130 kV dc and 130 A, each of which will feed the accelerator grids of two Positive Ion Neutral Injector (PINI) loads, to be installed at the Joint European Torus (EFDA-JET facility located at Culham, UK). The solution designed by JEMA includes two matching transformers which adapt the 36 kV of the JET AC power distribution network to the required 670 V at the secondary side. Additionally, such transformers provide a 30 deg.phase shift which is required by a 30000 A 12 pulse thyristor rectifier. The obtained and stabilised 650 V feed 120 IGBT invertors, which operate at 2778 Hz with modulated square waveform. Each invertor feeds a High Insulation High Frequency Transformer. The 120 transformers corresponding to one power supply are arranged in three oil filled tanks and provide the main insulation from the low voltage to the high voltage side. The square waveform obtained at the secondary of each transformer is rectified by means of a diode bridge. The connection in series of the 120 diode bridges provides the required 130 kV d.c. at the output. In order to protect the load, a redundant solid state crowbar has been designed. Such short circuiting device is composed of 26 Light Triggered Thyristors (LTTs), connected in series. Electrical simulations have been carried out in order to ensure that the system complies with the requirements of high accuracy and adequate protection of the load. The critical design of the High Voltage-High Frequency Transformers has also required electrostatic simulations of the electric field distribution

A high-voltage pulse generator for corona plasma generation

NARCIS (Netherlands)

Yan, K.; Heesch, van E.J.M.; Pemen, A.J.M.; Huijbrechts, P.A.H.J.; Gompel, van F.M.; Leuken, van H.E.M.; Matyas, Z.

2002-01-01

This paper discusses a high-voltage pulse generator for producing corona plasma. The generator consists of three resonant charging circuits, a transmission line transformer, and a triggered spark-gap switch. Voltage pulses in the order of 30-100 kV with a rise time of 10-20 ns, a pulse duration of

Solid-state high voltage modulator and its application to rf source high voltage power supplies

International Nuclear Information System (INIS)

Tooker, J.F.; Huynh, P.; Street, R.W.

2009-01-01

A solid-state high voltage modulator is described in which series-connected insulated-gate bipolar transistors (IGBTs) are switched at a fixed frequency by a pulse width modulation (PWM) regulator, that adjusts the pulse width to control the voltage out of an inductor-capacitor filter network. General Atomics proposed the HV power supply (HVPS) topology of multiple IGBT modulators connected to a common HVdc source for the large number of 1 MW klystrons in the linear accelerator of the Accelerator Production of Tritium project. The switching of 24 IGBTs to obtain 20 kVdc at 20 A for short pulses was successfully demonstrated. This effort was incorporated into the design of a -70 kV, 80 A, IGBT modulator, and in a short-pulse test 12 IGBTs regulated -5 kV at 50 A under PWM control. These two tests confirm the practicality of solid-state IGBT modulators to regulate high voltage at reasonable currents. Tokamaks such as ITER require large rf heating and current drive systems with multiple rf sources. A HVPS topology is presented that readily adapts to the three rf heating systems on ITER. To take advantage of the known economy of scale for power conversion equipment, a single HVdc source feeds multiple rf sources. The large power conversion equipment, which is located outside, converts the incoming utility line voltage directly to the HVdc needed for the class of rf sources connected to it, to further reduce cost. The HVdc feeds a set of IGBT modulators, one for each rf source, to independently control the voltage applied to each source, maximizing operational flexibility. Only the modulators are indoors, close to the rf sources, minimizing the use of costly near-tokamak floor space.

Voltage-Driven Conformational Switching with Distinct Raman Signature in a Single-Molecule Junction.

Science.gov (United States)

Bi, Hai; Palma, Carlos-Andres; Gong, Yuxiang; Hasch, Peter; Elbing, Mark; Mayor, Marcel; Reichert, Joachim; Barth, Johannes V

2018-04-11

Precisely controlling well-defined, stable single-molecule junctions represents a pillar of single-molecule electronics. Early attempts to establish computing with molecular switching arrays were partly challenged by limitations in the direct chemical characterization of metal-molecule-metal junctions. While cryogenic scanning probe studies have advanced the mechanistic understanding of current- and voltage-induced conformational switching, metal-molecule-metal conformations are still largely inferred from indirect evidence. Hence, the development of robust, chemically sensitive techniques is instrumental for advancement in the field. Here we probe the conformation of a two-state molecular switch with vibrational spectroscopy, while simultaneously operating it by means of the applied voltage. Our study emphasizes measurements of single-molecule Raman spectra in a room-temperature stable single-molecule switch presenting a signal modulation of nearly 2 orders of magnitude.

Insulation co-ordination in high-voltage electric power systems

CERN Document Server

Diesendorf, W

2015-01-01

Insulation Co-ordination in High-Voltage Electric Power Systems deals with the methods of insulation needed in different circumstances. The book covers topics such as overvoltages and lightning surges; disruptive discharge and withstand voltages; self-restoring and non-self-restoring insulation; lightning overvoltages on transmission lines; and the attenuation and distortion of lightning surges. Also covered in the book are topics such as the switching surge designs of transmission lines, as well as the insulation coordination of high-voltage stations. The text is recommended for electrical en

Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

Energy Technology Data Exchange (ETDEWEB)

Savic, M.S.

1986-07-01

The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

Hybrid switch for resonant power converters

Science.gov (United States)

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

Push-pull with recovery stage high-voltage DC converter for PV solar generator

Science.gov (United States)

Nguyen, The Vinh; Aillerie, Michel; Petit, Pierre; Pham, Hong Thang; Vo, Thành Vinh

2017-02-01

A lot of systems are basically developed on DC-DC or DC-AC converters including electronic switches such as MOS or bipolar transistors. The limits of efficiency are quickly reached when high output voltages and high input currents are needed. This work presents a new high-efficiency-high-step-up based on push-pull DC-DC converter integrating recovery stages dedicated to smart HVDC distributed architecture in PV solar energy production systems. Appropriate duty cycle ratio assumes that the recovery stage work with parallel charge and discharge to achieve high step-up voltage gain. Besides, the voltage stress on the main switch is reduced with a passive clamp circuit and thus, low on-state resistance Rdson of the main switch can be adopted to reduce conduction losses. Thus, the efficiency of a basic DC-HVDC converter dedicated to renewable energy production can be further improved with such topology. A prototype converter is developed, and experimentally tested for validation.

Allosteric substrate switching in a voltage-sensing lipid phosphatase.

Science.gov (United States)

Grimm, Sasha S; Isacoff, Ehud Y

2016-04-01

Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We found that the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), has not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage-sensing domain (VSD). Using fast fluorescence resonance energy transfer (FRET) reporters of PIPs to monitor enzyme activity and voltage-clamp fluorometry to monitor conformational changes in the VSD, we found that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage-sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This two-step allosteric control over a dual-specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility, endocytosis and exocytosis.

Allosteric substrate switching in a voltage sensing lipid phosphatase

Science.gov (United States)

Grimm, Sasha S.; Isacoff, Ehud Y.

2016-01-01

Allostery provides a critical control over enzyme activity, biasing the catalytic site between inactive and active states. We find the Ciona intestinalis voltage-sensing phosphatase (Ci-VSP), which modifies phosphoinositide signaling lipids (PIPs), to have not one but two sequential active states with distinct substrate specificities, whose occupancy is allosterically controlled by sequential conformations of the voltage sensing domain (VSD). Using fast FRET reporters of PIPs to monitor enzyme activity and voltage clamp fluorometry to monitor conformational changes in the VSD, we find that Ci-VSP switches from inactive to a PIP3-preferring active state when the VSD undergoes an initial voltage sensing motion and then into a second PIP2-preferring active state when the VSD activates fully. This novel 2-step allosteric control over a dual specificity enzyme enables voltage to shape PIP concentrations in time, and provides a mechanism for the complex modulation of PIP-regulated ion channels, transporters, cell motility and endo/exocytosis. PMID:26878552

High voltage pulse generator. [Patent application

Science.gov (United States)

Fasching, G.E.

1975-06-12

An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

Science.gov (United States)

Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

1998-01-01

A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

Single Switch Nonisolated Ultra-Step-Up DC-DC Converter with an Integrated Coupled Inductor for High Boost Applications

DEFF Research Database (Denmark)

Siwakoti, Yam P.; Blaabjerg, Frede

2017-01-01

This paper introduces a new single-switch nonisolated dc-dc converter with very high voltage gain and reduced semiconductor voltage stress. The converter utilizes an integrated autotransformer and a coupled inductor on the same core in order to achieve a very high voltage gain without using extreme...... duty cycle. Furthermore, a passive lossless clamp circuit recycles the leakage energy of the coupled magnetics and alleviates the voltage spikes across the main switch. This feature along with low stress on the switching device enables the designer to use a low voltage and low RDS-on MOSFET, which...

SSP Technology Investigation of a High-Voltage DC-DC Converter

Science.gov (United States)

Pappas, J. A.; Grady, W. M.; George, Patrick J. (Technical Monitor)

2002-01-01

The goal of this project was to establish the feasibility of a high-voltage DC-DC converter based on a rod-array triggered vacuum switch (RATVS) for the Space Solar Power system. The RATVS has many advantages over silicon and silicon-carbide devices. The RATVS is attractive for this application because it is a high-voltage device that has already been demonstrated at currents in excess of the requirement for an SSP device and at much higher per-device voltages than existing or near-term solid state switching devices. The RATVS packs a much higher specific power rating than any solid-state device and it is likely to be more tolerant of its surroundings in space. In addition, pursuit of an RATVS-based system would provide NASA with a nearer-term and less expensive power converter option for the SSP.

A new Zero Voltage Switching three-level NPC inverter

DEFF Research Database (Denmark)

He, Ning; Chen, Yenan; Xu, Dehong

2015-01-01

A novel Zero Voltage Switching (ZVS) three-level NPC inverter topology using a new ZVS Space Vector Modulation (SVM) scheme is proposed. A detailed operation analysis of ZVS three-level NPC inverter is given. The ZVS condition of the proposed ZVS inverter is derived and it can be achieved of all...

A New Asymmetrical Current-fed Converter with Voltage Lifting

Directory of Open Access Journals (Sweden)

DELSHAD, M.

2011-05-01

Full Text Available This paper presents a new zero voltage switching current-fed DC-DC converter with high voltage gain. In this converter all switches (main and auxiliary turn on under zero voltage switching and turn off under almost zero voltage switching due to snubber capacitor. Furthermore, the voltage spike across the main switch due to leakage inductance of forward transformer is absorbed. The flyback transformer which is connected to the output in series causes to high voltage gain and less voltage stress on the power devices. Considering high efficiency and voltage gain of this converter, it is suitable for green generated systems such as fuel cells or photovoltaic systems. The presented experimental results verify the integrity of the proposed converter.

Measurement ot the switching over-voltages at the disconnection of the high voltage shunt reactors in the Romanian power system

Energy Technology Data Exchange (ETDEWEB)

Stroica, Paul Constantin; Merfu, Ion; Stroica, Mihail; Merfu, Marius; Cojocaru, Florian; Stefan, Dinu; Cojocaru, Mihai

2010-09-15

The paper presents the measurements of the switching over-voltages made in the Romanian Power System, at the 400/220/110 kV Urechesti substation at the disconnection of a 400 kV, 100 MVAr shunt reactor type DFAL, Siemens, Germany, in 3 consecutive versions. The first one is for shunt reactor controlled by live-tank oil circuit breaker, the second one is for shunt reactor controlled by SF6 circuit breaker, and the third one is for shunt reactor controlled by SF6 circuit breaker and synchronize device.

Transient analysis of the output short-circuit fault of high power and high voltage DC power supply

International Nuclear Information System (INIS)

Yang Zhigang; Zhang Jian; Huang Yiyun; Hao Xu; Sun Haozhang; Guo Fei

2014-01-01

The transient conditions of output short-circuit fault of high voltage DC power supply was introduced, and the energy of power supply injecting into klystron during the protection process of three-electrode gas switch were analyzed and calculated in detail when klystron load happening electrode arc faults. The results of calculation and simulation are consistent with the results of the experiment. When the output short-circuit fault of high voltage power supply occurs, switch can be shut off in the microsecond, and the short circuit current can be controlled in 200 A. It has verified the rapidity and reliability of the three-electrode gas switch protection, and it has engineering application value. (authors)

PV source based high voltage gain current fed converter

Science.gov (United States)

Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

2017-11-01

This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

A New Approach to High Efficincy in Isolated Boost Converters for High-Power Low-Voltage Fuel Cell Apllications

DEFF Research Database (Denmark)

Nymand, Morten; Andersen, Michael A. E.

2008-01-01

A new low-leakage-inductance low-resistance design approach to low-voltage high-power isolated boost converters is presented. Very low levels of parasitic circuit inductances are achieved by optimizing transformer design and circuit lay-out. Primary side voltage clamp circuits can be eliminated...... by the use of power MOSFETs fully rated for repetitive avalanche. Voltage rating of primary switches can now be reduced, significantly reducing switch on-state losses. Finally, silicon carbide rectifying diodes allow fast diode turn-off, further reducing losses. Test results from a 1.5 kW full-bridge boost...... converter verify theoretical analysis and demonstrate very high efficiency. Worst case efficiency, at minimum input voltage maximum power, is 96.8 percent and maximum efficiency reaches 98 percent....

Phase shift PWM with double two-switch bridge for high power capacitor charging

International Nuclear Information System (INIS)

Karandikar, U.S.; Singh, Yashpal; Thakurta, A.C.

2013-01-01

Pulse power supply systems working at higher voltage and high repetition rate demands for higher power from capacitor chargers. Capacitor charging requirement become more challenging in such cases. In pulse power circuits, energy storage capacitor should be charged to its desired voltage before the next switching occurs. It is discharged within a small time, delivering large pulse power. A capacitor charger has to work with wide load variation repeatedly. Many schemes are used for this purpose. The proposed scheme aims at reducing stresses on switches by reducing peak current and their evils. A high voltage power supply is designed for capacitor charging. The proposed scheme is based on a Phase-Shifted PWM without using any extra component to achieve soft switching. Indirect constant average current capacitor charging is achieved with a simple control scheme. A double two-switch bridge is proposed to enhance reliability. Power supply has been developed to charge a capacitor of 50 μF to 2.5 kV at 25 Hz. (author)

Monolithic, High-Speed Fiber-Optic Switching Array for Lidar

Science.gov (United States)

Suckow, Will; Roberts, Tony; Switzer, Gregg; Terwilliger, Chelle

2011-01-01

Current fiber switch technologies use mechanical means to redirect light beams, resulting in slow switch time, as well as poor reliability due to moving parts wearing out quickly at high speeds. A non-mechanical ability to switch laser output into one of multiple fibers within a fiber array can provide significant power, weight, and costs savings to an all-fiber system. This invention uses an array of crystals that act as miniature prisms to redirect light as an electric voltage changes the prism s properties. At the heart of the electro-optic fiber-optic switch is an electro- optic crystal patterned with tiny prisms that can deflect the beam from the input fiber into any one of the receiving fibers arranged in a linear array when a voltage is applied across the crystal. Prism boundaries are defined by a net dipole moment in the crystal lattice that has been poled opposite to the surrounding lattice fabricated using patterned, removable microelectrodes. When a voltage is applied across the crystal, the resulting electric field changes the index of refraction within the prism boundaries relative to the surrounding substrate, causing light to deflect slightly according to Snell s Law. There are several materials that can host the necessary monolithic poled pattern (including, but not limited to, SLT, KTP, LiNbO3, and Mg:LiNbO3). Be cause this is a solid-state system without moving parts, it is very fast, and does not wear down easily. This invention is applicable to all fiber networks, as well as industries that use such networks. The unit comes in a compact package, can handle both low and high voltages, and has a high reliability (100,000 hours without maintenance).

The research of high voltage switchgear detecting unit

Science.gov (United States)

Ji, Tong; Xie, Wei; Wang, Xiaoqing; Zhang, Jinbo

2017-07-01

In order to understand the status of the high voltage switch in the whole life circle, you must monitor the mechanical and electrical parameters that affect device health. So this paper gives a new high voltage switchgear detecting unit based on ARM technology. It can measure closing-opening mechanical wave, storage motor current wave and contactor temperature to judge the device’s health status. When something goes wrong, it can be on alert and give some advice. The practice showed that it can meet the requirements of circuit breaker mechanical properties temperature online detection.

Cermet insert high voltage holdoff for ceramic/metal vacuum devices

Science.gov (United States)

Ierna, William F.

1987-01-01

An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

Voltage-Controlled Square/Triangular Wave Generator with Current Conveyors and Switching Diodes

Directory of Open Access Journals (Sweden)

Martin Janecek

2012-12-01

Full Text Available A novel relaxation oscillator based on integrating the diode-switched currents and Schmitt trigger is presented. It is derived from a known circuit with operational amplifiers where these active elements were replaced by current conveyors. The circuit employs only grounded resistances and capacitance and is suitable for high frequency square and triangular signal generation. Its frequency can be linearly and accurately controlled by voltage that is applied to a high-impedance input. Computer simulation with a model of a manufactured conveyor prototype verifies theoretic assumptions.

Study on the construction and its operating characteristics of Marx high voltage pulse generator

International Nuclear Information System (INIS)

Chung, W.K.; Yook, C.C.

1984-01-01

This study is to investigate the operating characteristics of a Marx high voltage pulse generator, which is designed and fabricated for the purpose of constructing a linear theta-pinch plasma generating facility. The Marx generator consists of a 2 kJ capacitor bank of maximum output voltage of 200kV, a set of main spark switch, a triggring system, and high voltage charging power supply. The experimental results show that the operating characteristics of the generator can be controlled through varying nitrogen pressure as a filling gas. The output pulse of the generator is achieved close to the estimated voltage with the rise time of 3*m seconds. The stability of the generator is also very satisfactory within operating range of main spark switch. (Author)

High-voltage short-fall pulse generator

International Nuclear Information System (INIS)

Dolbilov, G.V.; Fateev, A.A.; Petrov, V.A.

1986-01-01

Powerful high-voltage pulses with short fall times and relatively low afterpulse amplitude are required for the deflection systems of accelerators. A generator is described that provides, into a 75-ohm load, a voltage pulse of up to 100 kV with a fall time of less than 1 nsec and a relative afterpulse amplitude of less than or equal to 15%. The generator employs a short-circuited ferrite-filled line in which shock waves are formed. A magnetic section is used to increase power. The switch is a TGI1-2500/50 thyratron. The main causes of afterpulses and methods for reducing their amplitude are examined

High-voltage pulsed generator for dynamic fragmentation of rocks.

Science.gov (United States)

Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

2010-10-01

A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

High-voltage pulsed generator for dynamic fragmentation of rocks

Science.gov (United States)

Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

2010-10-01

A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

AC transmission, with very high voltages and the 750 kV line

Energy Technology Data Exchange (ETDEWEB)

Bocker, H

1964-01-01

The economic case for adoption of extra-high voltages for transmitting electric power over distances of the order of 1000 km is discussed. Some special technical developments for solving the problems attached to such high voltages are briefly discussed, particularly in the fields of switching and transients suppression. The first 750-kV projects in Canada and Russia are mentioned. Equipment, e.g., bushings, transformers, etc., operating at such voltages are illustrated.

A New High Frequency Injection Method Based on Duty Cycle Shifting without Maximum Voltage Magnitude Loss

DEFF Research Database (Denmark)

Wang, Dong; Lu, Kaiyuan; Rasmussen, Peter Omand

2015-01-01

The conventional high frequency signal injection method is to superimpose a high frequency voltage signal to the commanded stator voltage before space vector modulation. Therefore, the magnitude of the voltage used for machine torque production is limited. In this paper, a new high frequency...... amplitude. This may be utilized to develop new position estimation algorithm without involving the inductance in the medium to high speed range. As an application example, a developed inductance independent position estimation algorithm using the proposed high frequency injection method is applied to drive...... injection method, in which high frequency signal is generated by shifting the duty cycle between two neighboring switching periods, is proposed. This method allows injecting a high frequency signal at half of the switching frequency without the necessity to sacrifice the machine fundamental voltage...

Digitally Programmable High-Q Voltage Mode Universal Filter

Directory of Open Access Journals (Sweden)

D. Singh

2013-12-01

Full Text Available A new low-voltage low-power CMOS current feedback amplifier (CFA is presented in this paper. This is used to realize a novel digitally programmable CFA (DPCFA using transistor arrays and MOS switches. The proposed realizations nearly allow rail-to-rail swing capability at all the ports. Class-AB output stage ensures low power dissipation and high current drive capability. The proposed CFA/ DPCFA operates at supply voltage of ±0.75 V and exhibits bandwidth better than 95 MHz. An application of the DPCFA to realize a novel voltage mode high-Q digitally programmable universal filter (UF is given. Performances of all the proposed circuits are verified by PSPICE simulation using TSMC 0.25μm technology parameters.

Voltage switching technique for detecting nuclear spin polarization in a quantum dot

International Nuclear Information System (INIS)

Takahashi, Ryo; Kono, Kimitoshi; Tarucha, Seigo; Ono, Keiji

2010-01-01

We have introduced a source-drain voltage switching technique for studying nuclear spins in a vertical double quantum dot. Switching the source-drain voltage between the spin-blockade state and the zero-bias Coulomb blockade state can tune the energy difference between the spin singlet and triplet, and effectively turn on/off the hyperfine interaction. Since the change in the nuclear spin state affects the source-drain current, nuclear spin properties can only be detected by transport measurement. Using this technique, we have succeeded in measuring the timescale of nuclear spin depolarization. Furthermore, combining this technique and an RF ac magnetic field, we successfully detected continuous-wave NMR signals of 75 As, 69 Ga, and 71 Ga, which are contained in a quantum dot. (author)

BEHAVIOUR OF BACKFILL MATERIALS FOR ELECTRICAL GROUNDING SYSTEMS UNDER HIGH VOLTAGE CONDITIONS

Directory of Open Access Journals (Sweden)

S. C. LIM

2015-06-01

Full Text Available Backfill materials like Bentonite and cement are effective in lowering grounding resistance of electrodes for a considerable period. During lightning, switching impulses and earth fault occurrences in medium and high voltage networks, the grounding system needs to handle extremely high currents either for a short duration or prolonged period respectively. This paper investigates the behaviour of bentonite, cement and sand under impulse and alternating high voltage (50Hz conditions. Fulguritic-formation was observed in all materials under alternating high voltage. The findings reveal that performance of grounding systems under high voltage conditions may significantly change from the outcomes anticipated at design stage.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

International Nuclear Information System (INIS)

Pei, Chengquan; Tian, Jinshou; Liu, Zhen; Qin, Hong; Wu, Shengli

2017-01-01

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

A novel ZVS high voltage power supply for micro-channel plate photomultiplier tubes

Energy Technology Data Exchange (ETDEWEB)

Pei, Chengquan [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China); Tian, Jinshou [Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi' an 710119 (China); Liu, Zhen [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China); Qin, Hong [School of Computer Science and Technology, Xi' an University of Science and Technology, Xi' an 710054 (China); Wu, Shengli, E-mail: slwu@mail.xjtu.edu.cn [Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi' an Jiaotong University, Xi’an 710049 (China)

2017-04-11

A novel resonant high voltage power supply (HVPS) with zero voltage switching (ZVS), to reduce the voltage stress on switching devices and improve conversion efficiency, is proposed. The proposed HVPS includes a drive circuit, a transformer, several voltage multiplying circuits, and a regulator circuit. The HVPS contains several secondary windings that can be precisely regulated. The proposed HVPS performed better than the traditional resistor voltage divider, which requires replacing matching resistors resulting in resistor dispersibility in the Micro-Channel Plate (MCP). The equivalent circuit of the proposed HVPS was established and the operational principle analyzed. The entire switching element can achieve ZVS, which was validated by a simulation and experiments. The properties of this HVPS were tested including minimum power loss (240 mW), maximum power loss (1 W) and conversion efficiency (85%). The results of this research are that the proposed HVPS was suitable for driving the micro-channel plate photomultiplier tube (MCP-PMT). It was therefore adopted to test the MCP-PMT, which will be used in Daya Bay reactor neutrino experiment II in China.

Uncertainty estimation of non-ideal analog switches using programmable Josephson voltage standards for mutual inductance measurement in the joule balance

International Nuclear Information System (INIS)

Wang, Gang; Zhang, Zhonghua; Li, Zhengkun; Xu, Jinxin; You, Qiang

2016-01-01

Measurement of the mutual inductance is one of the key techniques in the joule balance to determine the Planck constant h, where a standard-square-wave compensation method was proposed to accurately measure the dc value of the mutual inductance. With this method, analog switches are used to compose an analog-switch signal generator to synthesize the excitation and compensation voltages. However, the accuracy of the compensation voltage is influenced by the non-ideal behaviors of analog-switches. In this paper, the effect from these non-ideal switches is analyzed in detail and evaluated with the equivalent circuits. A programmable Josephson voltage standard (PJVS) is used to generate a reference compensation voltage to measure the time integration of the voltage waveform generated by the analog-switch signal generator. Moreover, the effect is also evaluated experimentally by comparing the difference between the mutual inductance measured with the analog-switch signal generator and the value determined by the PJVS-analog-switch generator alternately in the same mutual inductance measurement system. The result shows that the impact of analog switches is 1.97  ×  10 −7 with an uncertainty of 1.83  ×  10 −7 (k  =  1) and confirms that the analog switch method can be used regularly instead of the PJVS in the mutual inductance measurement for the joule balance experiment. (paper)

Assumption or Fact? Line-to-Neutral Voltage Expression in an Unbalanced 3-Phase Circuit during Inverter Switching

Science.gov (United States)

Masrur, M. A.

2009-01-01

This paper discusses the situation in a 3-phase motor or any other 3-phase system operating under unbalanced operating conditions caused by an open fault in an inverter switch. A dc voltage source is assumed as the input to the inverter, and under faulty conditions of the inverter switch, the actual voltage applied between the line to neutral…

Model predictive control of a high speed switched reluctance generator system

NARCIS (Netherlands)

Marinkov, Sava; De Jager, Bram; Steinbuch, Maarten

2013-01-01

This paper presents a novel voltage control strategy for the high-speed operation of a Switched Reluctance Generator. It uses a linear Model Predictive Control law based on the average system model. The controller computes the DC-link current needed to achieve the tracking of a desired voltage

A graphene integrated highly transparent resistive switching memory device

Science.gov (United States)

Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

2018-05-01

We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

130 kV 130 A high voltage switching mode power supply for neutral beam injectors-Control issues and algorithms

International Nuclear Information System (INIS)

Ganuza, D.; Garcia, F.; Zulaika, M.; Perez, A.; Jones, T.T.C.

2005-01-01

The company JEMA has delivered to the Joint European Torus (JET facility in Culham) two high voltage switching mode power supplies (HVSMPS) each rated 130 kVdc and 130 A. One HVSMPS feeds the grids of two PINI loads. This paper describes the main control issues and the algorithms developed for the project. The most demanding requirements from the control point of view is an absolute accuracy of ±1300 V and the possibility of performing up to 255 re-applications of the high voltage during a 20 s pulse. Keeping the output voltage ripple to the specified tolerance has been a major achievement of the control system. Since the output stage is formed of several modules (120) connected in series, their stray capacitance to ground significantly influences the individual contribution of each single module to the global output voltage. Two complementary techniques have been used to balance the effects of the stray capacities. The fast re-applications requirement has a significant impact on the intermediate dc link. This section is composed of a capacity of 0.83 F, which feeds the 120 invertor modules. The dc link is fed by a 12 pulse SCR rectifier, whose matching transformers are connected to the 36 kV grid. Every re-application and every voltage shutdown supposes a quasi-instantaneous power step of 17 MW. Fast open loop algorithms have been implemented in order to keep the dc link voltage within acceptable margins. Moreover, the HVSMPS output characteristics have to be maintained during the rapid and important voltage fluctuations of the 36 kV mains (28-37 kV). The general control system is based on a Simatic S7 PLC, and a SCADA user interface. Up to 1000 signals are acquired. The control system has shown to be also a useful tool to allow for a rapid and accurate identification of faults and their origin

A Reduced Switch Voltage Stress Class E Power Amplifier Using Harmonic Control Network

OpenAIRE

Ali Reza Zirak; Sobhan Roshani

2016-01-01

In this paper, a harmonic control network (HCN) is presented to reduce the voltage stress (maximum MOSFET voltage) of the class E power amplifier (PA). Effects of the HCN on the amplifier specifications are investigated. The results show that the proposed HCN affects several specifications of the amplifier, such as drain voltage, switch current, output power capability (Cp factor), and drain impedance. The output power capability of the presented amplifier is also improved, compared with the ...

Novel analytical model for optimizing the pull-in voltage in a flexured MEMS switch incorporating beam perforation effect

Science.gov (United States)

Guha, K.; Laskar, N. M.; Gogoi, H. J.; Borah, A. K.; Baishnab, K. L.; Baishya, S.

2017-11-01

This paper presents a new method for the design, modelling and optimization of a uniform serpentine meander based MEMS shunt capacitive switch with perforation on upper beam. The new approach is proposed to improve the Pull-in Voltage performance in a MEMS switch. First a new analytical model of the Pull-in Voltage is proposed using the modified Mejis-Fokkema capacitance model taking care of the nonlinear electrostatic force, the fringing field effect due to beam thickness and etched holes on the beam simultaneously followed by the validation of same with the simulated results of benchmark full 3D FEM solver CoventorWare in a wide range of structural parameter variations. It shows a good agreement with the simulated results. Secondly, an optimization method is presented to determine the optimum configuration of switch for achieving minimum Pull-in voltage considering the proposed analytical mode as objective function. Some high performance Evolutionary Optimization Algorithms have been utilized to obtain the optimum dimensions with less computational cost and complexity. Upon comparing the applied algorithms between each other, the Dragonfly Algorithm is found to be most suitable in terms of minimum Pull-in voltage and higher convergence speed. Optimized values are validated against the simulated results of CoventorWare which shows a very satisfactory results with a small deviation of 0.223 V. In addition to these, the paper proposes, for the first time, a novel algorithmic approach for uniform arrangement of square holes in a given beam area of RF MEMS switch for perforation. The algorithm dynamically accommodates all the square holes within a given beam area such that the maximum space is utilized. This automated arrangement of perforation holes will further improve the computational complexity and design accuracy of the complex design of perforated MEMS switch.

Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

Science.gov (United States)

Ierna, W.F.

1986-03-11

An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

A high voltage gain quasi Z-source isolated DC/DC converter

DEFF Research Database (Denmark)

Siwakoti, Yam P.; Blaabjerg, Frede; Loh, Poh Chiang

2014-01-01

A compact quasi-Z-source DC/DC converter is presented with high voltage gain, isolated output, and improved efficiency. The improvements in size and performance were achieved by using a square wave inverter with only two output switches driving an isolating transformer in push-pull mode, followed...... by a voltage doubling output rectifier. The converter is well-suited to applications requiring a high voltage gain, especially renewable energy sources such as photovoltaic and fuel-cell power supplies. To demonstrate the converter's performance a prototype designed to output 400 V at 500 W was constructed...

Phase diagrams and switching of voltage and magnetic field in dilute magnetic semiconductor nanostructures

Energy Technology Data Exchange (ETDEWEB)

Escobedo, R. [Departamento de Matematica Aplicada y Ciencias de la Computacion, Universidad de Cantabria, 39005 Santander (Spain); Carretero, M.; Bonilla, L.L. [G. Millan Institute, Fluid Dynamics, Nanoscience and Industrial Maths., Universidad Carlos III de Madrid, 28911 Leganes (Spain); Unidad Asociada al Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain); Platero, G. [Instituto de Ciencia de Materiales, CSIC, 28049 Cantoblanco, Madrid (Spain)

2010-04-15

The response of an n-doped dc voltage biased II-VI multi-quantum well dilute magnetic semiconductor nanostructure having its first well doped with magnetic (Mn) impurities is analyzed by sweeping wide ranges of both the voltage and the Zeeman level splitting induced by an external magnetic field. The level splitting versus voltage phase diagram shows regions of stable self-sustained current oscillations immersed in a region of stable stationary states. Transitions between stationary states and self-sustained current oscillations are systematically analyzed by both voltage and level splitting abrupt switching. Sudden voltage or/and magnetic field changes may switch on current oscillations from an initial stationary state, and reciprocally, current oscillations may disappear after sudden changes of voltage or/and magnetic field changes into the stable stationary states region. The results show how to design such a device to operate as a spin injector and a spin oscillator by tuning the Zeeman splitting (through the applied external magnetic field), the applied voltage and the sample configuration parameters (doping density, barrier and well widths, etc.) to select the desired stationary or oscillatory behavior. Phase diagram of Zeeman level splitting {delta} vs. dimensionless applied voltage {phi} for N = 10 QWs. White region: stable stationary states; black: stable self-sustained current oscillations. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Power-MOSFET Voltage Regulator

Science.gov (United States)

Miller, W. N.; Gray, O. E.

1982-01-01

Ninety-six parallel MOSFET devices with two-stage feedback circuit form a high-current dc voltage regulator that also acts as fully-on solid-state switch when fuel-cell out-put falls below regulated voltage. Ripple voltage is less than 20 mV, transient recovery time is less than 50 ms. Parallel MOSFET's act as high-current dc regulator and switch. Regulator can be used wherever large direct currents must be controlled. Can be applied to inverters, industrial furnaces photovoltaic solar generators, dc motors, and electric autos.

Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

Directory of Open Access Journals (Sweden)

Chih-Lung Shen

2013-01-01

Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

Soft-Switched Dual-Input DC-DC Converter Combining a Boost-Half-Bridge Cell and a Voltage-Fed Full-Bridge Cell

DEFF Research Database (Denmark)

Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

2013-01-01

This paper presents a new zero-voltage-switching (ZVS) isolated dc-dc converter which combines a boost halfbridge (BHB) cell and a full-bridge (FB) cell, so that two different type of power sources, i.e. both current-fed and voltage-fed, can be coupled effectively by the proposed converter...... for various applications, such as fuel cell and super-capacitor hybrid energy system. By fully using two high frequency transformers and a shared leg of switches, number of the power devices and associated gate driver circuits can be reduced. With phase-shift control, the converter can achieve ZVS turn......-on of active switches and zero-current switching (ZCS) turn-off of diodes. In this paper, derivation, analysis and design of the proposed converter are presented. Finally, a 25~50 V input, 300~400 V output prototype with a 600 W nominal power rating is built up and tested to demonstrate the effectiveness...

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

Energy Technology Data Exchange (ETDEWEB)

Ljusev, P.; Andersen, Michael A.E.

2005-07-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify design, increase efficiency and integration level, reduce product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented. (au)

Direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp

DEFF Research Database (Denmark)

Ljusev, Petar; Andersen, Michael Andreas E.

2005-01-01

This paper discusses the advantages and problems when implementing direct energy conversion switching-mode audio power amplifiers. It is shown that the total integration of the power supply and Class D audio power amplifier into one compact direct converter can simplify the design, increase...... efficiency, reduce the product volume and lower its cost. As an example, the principle of operation and the measurements made on a direct-conversion switching-mode audio power amplifier with active capacitive voltage clamp are presented....

State-plane analysis of zero-voltage-switching resonant dc/dc power converters

Science.gov (United States)

Kazimierczuk, Marian K.; Morse, William D.

The state-plane analysis technique for the zero-voltage-switching resonant dc/dc power converter family of topologies, namely the buck, boost, buck-boost, and Cuk converters is established. The state plane provides a compression of information that allows the designer to uniquely examine the nonlinear dynamics of resonant converter operation. Utilizing the state plane, resonant converter modes of operation are examined and the switching frequencies are derived for the boundaries between these modes, including the boundary of energy conversion.

Optimization of a high voltage power supply for a nitrogen laser

International Nuclear Information System (INIS)

Baly, L.; Garcia, M.A.; Martin, J.L.

1997-01-01

In the present paper the optimization of a high voltage switching power supply for a compact TEA nitrogen laser is described. Taking as criterion the recovering of the charging voltage in a 95% of the maximal voltage, the relationships between the recovering rate coefficient, the recovering time and the maximal repetition frequency were obtained. Using an experimental set-up the power supply optimal values of turns in the primary transformer coil N p= 35 and excitation pulse frequency f exc= 25.5 kHz was determined

Layout Capacitive Coupling and Structure Impacts on Integrated High Voltage Power MOSFETs

DEFF Research Database (Denmark)

Fan, Lin; Knott, Arnold; Jørgensen, Ivan Harald Holger

2016-01-01

The switching performances of the integrated high voltage power MOSFETs that have prevailing interconnection matrices are being heavily influenced by the parasitic capacitive coupling of on-chip metal wires. The mechanism of the side-byside coupling is generally known, however, the layer-to-layer......The switching performances of the integrated high voltage power MOSFETs that have prevailing interconnection matrices are being heavily influenced by the parasitic capacitive coupling of on-chip metal wires. The mechanism of the side-byside coupling is generally known, however, the layer...... extraction tool shows that the side-by-side coupling dominated structure can perform better than the layer-to-layer coupling dominated structure, in terms of on-resistance times input or output capacitance, by 9.2% and 4.9%, respectively....

High power switches for ion induction linacs

International Nuclear Information System (INIS)

Humphries, S. Jr.; Savage, M.; Saylor, W.B.

1985-01-01

The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystron-like interaction with the accelerating cavities leading to enhanced momentum spread. In this paper, the author describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

High power switches for ion induction linacs

International Nuclear Information System (INIS)

Humphries, S.; Savage, M.; Saylor, W.B.

1985-01-01

The success of linear induction ion accelerators for accelerator inertial fusion (AIF) applications depends largely on innovations in pulsed power technology. There are tight constraints on the accuracy of accelerating voltage waveforms to maintain a low momentum spread. Furthermore, the non-relativistic ion beams may be subject to a klystronlike interaction with the accelerating cavities, leading to enhanced momentum spread. In this paper, we describe a novel high power switch with a demonstrated ability to interrupt 300 A at 20 kV in less than 60 ns. The switch may allow the replacement of pulse modulators in linear induction accelerators with hard tube pulsers. A power system based on a hard tube pulser could solve the longitudinal instability problem while maintaining high energy transfer efficiency. The problem of longitudinal beam control in ion induction linacs is reviewed in Section 2. Section 3 describes the principles of the plasma flow switch. Experimental results are summarized in Section 4

PV Power-Generation System with a Phase-Shift PWM Technique for High Step-Up Voltage Applications

Directory of Open Access Journals (Sweden)

Cheng-Tao Tsai

2012-01-01

Full Text Available A PV power-generation system with a phase-shift pulse-width modulation (PWM technique for high step-up voltage applications is proposed. The proposed power-generation system consists of two stages. In the input stage, all power switches of the full-bridge converter with phase-shift technique can be operated with zero-current switching (ZCS at turn-on or turn-off transition. Hence, the switching losses of the power switches can be reduced. Then, in the DC output stage, a voltage-doubler circuit is used to boost a high dc-link bus voltage. To supply a utility power, a dc/ac inverter is connected to induce a sinusoidal source. In order to draw a maximum power from PV arrays source, a microcontroller is incorporated with the perturbation and observation method to implement maximum power point tracking (MPPT algorithm and power regulating scheme. In this study, a full load power of 300 W prototype has been built. Experimental results are presented to verify the performance and feasibility of the proposed PV power-generation system.

A HIGH CURRENT, HIGH VOLTAGE SOLID-STATE PULSE GENERATOR FOR THE NIF PLASMA ELECTRODE POCKELS CELL

International Nuclear Information System (INIS)

Arnold, P A; Barbosa, F; Cook, E G; Hickman, B C; Akana, G L; Brooksby, C A

2007-01-01

A high current, high voltage, all solid-state pulse modulator has been developed for use in the Plasma Electrode Pockels Cell (PEPC) subsystem in the National Ignition Facility. The MOSFET-switched pulse generator, designed to be a more capable plug-in replacement for the thyratron-switched units currently deployed in NIF, offers unprecedented capabilities including burst-mode operation, pulse width agility and a steady-state pulse repetition frequency exceeding 1 Hz. Capable of delivering requisite fast risetime, 17 kV flattop pulses into a 6 (Omega) load, the pulser employs a modular architecture characteristic of the inductive adder technology, pioneered at LLNL for use in acceleration applications, which keeps primary voltages low (and well within the capabilities of existing FET technology), reduces fabrication costs and is amenable to rapid assembly and quick field repairs

Triple voltage dc-to-dc converter and method

Science.gov (United States)

Su, Gui-Jia

2008-08-05

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

MOSFET-based high voltage short pulse generator for ultrasonic transducer excitation

Science.gov (United States)

Hidayat, Darmawan; Setianto, Syafei, Nendi Suhendi; Wibawa, Bambang Mukti

2018-02-01

This paper presents the generation of a high-voltage short pulse for the excitation of high frequency ultrasonic transducers. This is highly required in the purpose of various ultrasonic-based evaluations, particularly when high resolution measurement is necessary. A high voltage (+760 V) DC voltage source was pulsated by an ultrafast switching MOSFET which was driven by a pulse generator circuit consisting of an astable multivibrator, a one-shot multivibrator with Schmitt trigger input and a high current MOSFET driver. The generated pulses excited a 200-kHz and a 1-MHz ultrasonic transducers and tested in the transmission mode propagation to evaluate the performances of the generated pulse. The test results showed the generator were able to produce negative spike pulses up to -760 V voltage with the shortest time-width of 107.1 nanosecond. The transmission-received ultrasonic waves show frequency oscillation at 200 and 961 kHz and their amplitudes varied with the voltage of excitation pulse. These results conclude that the developed pulse generator is applicable to excite transducer for the generation of high frequency ultrasonic waves.

Digital control of high-frequency switched-mode power converters

CERN Document Server

Corradini, Luca; Mattavelli, Paolo; Zane, Regan

This book is focused on the fundamental aspects of analysis, modeling and design of digital control loops around high-frequency switched-mode power converters in a systematic and rigorous manner Comprehensive treatment of digital control theory for power converters Verilog and VHDL sample codes are provided Enables readers to successfully analyze, model, design, and implement voltage, current, or multi-loop digital feedback loops around switched-mode power converters Practical examples are used throughout the book to illustrate applications of the techniques developed Matlab examples are also

High voltage series protection of neutral injectors with crossed-field tubes

International Nuclear Information System (INIS)

Hofmann, G.A.; Thomas, D.G.

1976-01-01

High voltage neutral beam injectors for fusion machines require either parallel or series protection schemes to limit fault currents in case of arcing to safe levels. The protection device is usually located between the high voltage supply and beam injector and either crowbars (parallel protection) or disconnects (series protection) the high voltage supply when a fault occurs. Because of its isolating property, series protection is preferred. The Hughes crossed-field tube is uniquely suited for series protection schemes. The tube can conduct 40 A continuously upon application of voltage (approximately 300 V) and a static magnetic field (approximately 100 G). It is also capable of interrupting currents of 1000 A within 10 μs and withstand voltage of more than 120 kV. Experiments were performed to simulate the duty of a crossed-field tube as a series protection element in a neutral injector circuit under fault conditions. Results of on-switching tests under high and low voltage and interruption of fault currents are presented. An example of a possible protection circuit with crossed-field tubes is discussed

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [State Univ. of New York (SUNY), Plattsburgh, NY (United States); Univ. of California, Davis, CA (United States)

2012-01-20

Photoconductive semiconductor switches (PCSS) have been investigated since the late 1970s. Some devices have been developed that withstand tens of kilovolts and others that switch hundreds of amperes. However, no single device has been developed that can reliably withstand both high voltage and switch high current. Yet, photoconductive switches still hold the promise of reliable high voltage and high current operation with subnanosecond risetimes. Particularly since good quality, bulk, single crystal, wide bandgap semiconductor materials have recently become available. In this chapter we will review the basic operation of PCSS devices, status of PCSS devices and properties of the wide bandgap semiconductors 4H-SiC, 6H-SiC and 2H-GaN.

Development of ultra-short high voltage pulse technology using magnetic pulse compression

Energy Technology Data Exchange (ETDEWEB)

Cha, Byung Heon; Kim, S. G.; Nam, S. M.; Lee, B. C.; Lee, S. M.; Jeong, Y. U.; Cho, S. O.; Jin, J. T.; Choi, H. L

1998-01-01

The control circuit for high voltage switches, the saturable inductor for magnetic assist, and the magnetic pulse compression circuit were designed, constructed, and tested. The core materials of saturable inductors in magnetic pulse compression circuit were amorphous metal and ferrite and total compression stages were 3. By the test, in high repetition rate, high pulse compression were certified. As a result of this test, it became possible to increase life-time of thyratrons and to replace thyratrons by solid-state semiconductor switches. (author). 16 refs., 16 tabs.

Development of ultra-short high voltage pulse technology using magnetic pulse compression

International Nuclear Information System (INIS)

Cha, Byung Heon; Kim, S. G.; Nam, S. M.; Lee, B. C.; Lee, S. M.; Jeong, Y. U.; Cho, S. O.; Jin, J. T.; Choi, H. L.

1998-01-01

The control circuit for high voltage switches, the saturable inductor for magnetic assist, and the magnetic pulse compression circuit were designed, constructed, and tested. The core materials of saturable inductors in magnetic pulse compression circuit were amorphous metal and ferrite and total compression stages were 3. By the test, in high repetition rate, high pulse compression were certified. As a result of this test, it became possible to increase life-time of thyratrons and to replace thyratrons by solid-state semiconductor switches. (author). 16 refs., 16 tabs

Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

Energy Technology Data Exchange (ETDEWEB)

Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

2016-01-04

We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

High-ratio voltage conversion in CMOS for efficient mains-connected standby

CERN Document Server

Meyvaert, Hans

2016-01-01

This book describes synergetic innovation opportunities offered by combining the field of power conversion with the field of integrated circuit (IC) design. The authors demonstrate how integrating circuits enables increased operation frequency, which can be exploited in power converters to reduce drastically the size of the discrete passive components. The authors introduce multiple power converter circuits, which are very compact as result of their high level of integration. First, the limits of high-power-density low-voltage monolithic switched-capacitor DC-DC conversion are investigated to enable on-chip power granularization. AC-DC conversion from the mains to a low voltage DC is discussed, enabling an efficient and compact, lower-power auxiliary power supply to take over the power delivery during the standby mode of mains-connected appliances, allowing the main power converter of these devices to be shut down fully. Discusses high-power-density monolithic switched-capacitor DC-DC conversion in bulk CMOS,...

Combined resonant tank capacitance and pulse frequency modulation control for ZCS-SR inverter-fed high voltage DC power supply

International Nuclear Information System (INIS)

Lee, S S; Iqbal, S; Kamarol, M

2011-01-01

Conventional pulse frequency modulated (PFM) zero current switching (ZCS) series resonant (SR) inverter fed high voltage dc power supplies have nearly zero switching loss. However, they have limitations of poor controllability at light loads and large output voltage ripple at low switching frequencies. To address these problems, this paper proposes a combined resonant tank capacitance and pulse frequency modulation based control approach. For the realization of the proposed control approach, the tank circuit of the resonant inverter is made up of several resonant capacitors that are switched into or out of the tank circuit by electromechanical switches. The output voltage of the converter is regulated by digitally modulating the resonant tank capacitance and narrowly varying the switching frequency. The proposed control scheme has several features, namely a wide range of controllability even at light loads, less output voltage ripple, and less current stress on the inverter's power switches at light loads. Therefore, the proposed control approach alleviates most of the problems associated with conventional PFM. Experimental results obtained from a scaled down laboratory prototype are presented to verify the effectiveness of the proposed system.

A digital controlled negative high voltage power source for LINAC of HLS

International Nuclear Information System (INIS)

Gao Hui; Chen Jun; Hong Jun; Wang Weibing

2005-01-01

This paper introduces the working principle of a 10-80 kV negative high voltage power source for the electronic gun of the 200 MeV LINAC of NSRL, especially how to realize the switch power, voltage/current sampling, feedback control and microcontroller module. The firmware design for the SOC microcontroller of ADuC8xx and the application software design for PC are also presented. (authors)

A high-current rail-type gas switch with preionization by an additional corona discharge

Energy Technology Data Exchange (ETDEWEB)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G., E-mail: ekrastelev@yandex.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute) (Russian Federation)

2016-12-15

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

A high-current rail-type gas switch with preionization by an additional corona discharge

International Nuclear Information System (INIS)

Antipov, E. I.; Belozerov, O. S.; Krastelev, E. G.

2016-01-01

The characteristics of a high-current rail-type gas switch with preionization of the gas (air) in a spark gap by an additional corona discharge are investigated. The experiments were performed in a voltage range of 10–45 kV using a two-electrode switch consisting of two cylindrical electrodes with a diameter of 22 mm and a length of 100 mm and a set of laterally located corona-discharge needles. The requirements for the position and size of the needles are defined for which a corona discharge is ignited before a breakdown of the main gap and does not change to a sparking form, and the entire length of the rail electrodes is efficiently used. The fulfillment of these requirements ensures stable operation of the switch with a small variation of the pulse breakdown voltage, which is not more than 1% for a fixed voltage-pulse rise time in the range from 150 ns to 3.5 μs. A short delay time of the switch breakdown makes it possible to control the two-electrode switch by an overvoltage pulse of nanosecond duration.

Resistive Switching and Voltage Induced Modulation of Tunneling Magnetoresistance in Nanosized Perpendicular Organic Spin Valves

Science.gov (United States)

Schmidt, Georg; Goeckeritz, Robert; Homonnay, Nico; Mueller, Alexander; Fuhrmann, Bodo

Resistive switching has already been reported in organic spin valves (OSV), however, its origin is still unclear. We have fabricated nanosized OSV based on La0.7Sr0.3MnO3/Alq3/Co. These devices show fully reversible resistive switching of up to five orders of magnitude. The magnetoresistance (MR) is modulated during the switching process from negative (-70%) to positive values (+23%). The results are reminiscent of experiments claiming magnetoelectric coupling in LSMO based tunneling structures using ferroelectric barriers. By analyzing the I/V characteristics of the devices we can show that transport is dominated by tunneling through pinholes. The resistive switching is caused by voltage induced creation and motion of oxygen vacancies at the LSMO surface, however, the resulting tunnel barrier is complemented by a second adjacent barrier in the organic semiconductor. Our model shows that the barrier in the organic material is constant, causing the initial MR while the barrier in the LMSO can be modulated by the voltage resulting in the resistive switching and the modulation of the MR as the coupling to the states in the LSMO changes. A switching caused by LSMO only is also supported by the fact that replacing ALQ3 by H2PC yields almost identical results. Supported by the DFG in the SFB762.

Zero-voltage DC/DC converter with asymmetric pulse-width modulation for DC micro-grid system

Science.gov (United States)

Lin, Bor-Ren

2018-04-01

This paper presents a zero-voltage switching DC/DC converter for DC micro-grid system applications. The proposed circuit includes three half-bridge circuit cells connected in primary-series and secondary-parallel in order to lessen the voltage rating of power switches and current rating of rectifier diodes. Thus, low voltage stress of power MOSFETs can be adopted for high-voltage input applications with high switching frequency operation. In order to achieve low switching losses and high circuit efficiency, asymmetric pulse-width modulation is used to turn on power switches at zero voltage. Flying capacitors are used between each circuit cell to automatically balance input split voltages. Therefore, the voltage stress of each power switch is limited at Vin/3. Finally, a prototype is constructed and experiments are provided to demonstrate the circuit performance.

High voltage nanosecond generator with pulse repetition rate of 1,000 p.p.s.

Energy Technology Data Exchange (ETDEWEB)

Gubanov, V P; Korovin, S D; Stepchenko, A S [High Current Electronics Institute, Tomsk (Russian Federation)

1997-12-31

A compact high voltage nanosecond generator is described with a pulse repetition rate up to 1000 p.p.s. The generator includes a 30-Ohm coaxial forming line charged by a built-in Tesla transformer with a high coupling coefficient, and a high voltage (N{sub 2}) gas gap switch with gas blowing between the electrodes. The maximum forming line charge voltage is 450 kV, the pulse duration is about 4 ns, and its amplitude for a matched load is up to 200 kV. (author). 3 figs., 9 refs.

Multiplex Outputs ns Grade High-voltage Fast Pulse Generator Study

International Nuclear Information System (INIS)

Wang Xin; Chen Kenan

2009-01-01

Using a double-grid hydrogen thyratron, a fast pulse generator with four outputs, high-voltage, low jitter, was made to use at special occasion.In this paper, the basic structure of pulser, switching theory and double-grid driving of hydrogen thyratron was introduced, and also, the effects of grids driving pulses characteristics, the delay between too grids driving, the reservoir heater voltage and cathode heater voltage on the output are carefully examined in experiments. The pulse generator with four outputs was made to producing pulses with amplitude up to 4 kV, rise-time less than 15 ns and jitter less than 3 ns. (authors)

Design of high voltage power supply of miniature X-ray tube based on resonant Royer

International Nuclear Information System (INIS)

Liu Xiyao; Zeng Guoqiang; Tan Chengjun; Luo Qun; Gong Chunhui; Huang Rui

2013-01-01

Background: In recent years, X rays are widely used in various fields. With the rapid development of national economy, the demand of high quality, high reliability, and high stability miniature X-ray tube has grown rapidly. As an important core component of miniature X-ray tube, high voltage power supply has attracted wide attention. Purpose: To match miniature, the high voltage power supply should be small, lightweight, good quality, etc. Based on the basic performance requirements of existing micro-X-ray tube high voltage power supply, this paper designs an output from 0 to -30 kV adjustable miniature X-ray tube voltage DC power supply. Compared to half-bridge and full-bridge switching-mode power supply, its driving circuit is simple. With working on the linear condition, it has no switching noise. Methods: The main circuit makes use of DC power supply to provide the energy. The resonant Royer circuit supplies sine wave which drives to the high frequency transformer's primary winding with resultant sine-like high voltage appearing across the secondary winding. Then, the voltage doubling rectifying circuit would achieve further boost. In the regulator circuit, a feedback control resonant transistor base current is adopted. In order to insulate air, a silicone rubber is used for high pressure part packaging, and the output voltage is measured by the dividing voltage below -5 kV. Results: The stability of circuit is better than 0.2%/6 h and the percent of the output ripple voltage is less than 0.3%. Keeping the output voltage constant, the output current can reach 57 μA by changing the size of load resistor. This high voltage power supply based on resonant Royer can meet the requirement of miniature X-ray tube. Conclusions: The circuit can satisfy low noise, low ripple, low power and high voltage regulator power supply design. However, its efficiency is not high enough because of the linear condition. In the next design, to further reduce power consumption, we

Evaluation of resistive switching properties of Si-rich oxide embedded with Ti nanodots by applying constant voltage and current

Science.gov (United States)

Ohta, Akio; Kato, Yusuke; Ikeda, Mitsuhisa; Makihara, Katsunori; Miyazaki, Seiichi

2018-06-01

We have studied the resistive switching behaviors of electron beam (EB) evaporated Si-rich oxide (SiO x ) sandwiched between Ni electrodes by applying a constant voltage and current. Additionally, the impact of Ti nanodots (NDs) embedded into SiO x on resistive switching behaviors was investigated because it is expected that NDs can trigger the formation of a conductive filament path in SiO x . The resistive switching behaviors of SiO x show that the response time during resistance switching was decreased by increasing the applied constant current or constant voltage. It was found that Ti-NDs in SiO x enhance the conductive filament path formation owing to electric field concentration by Ti-NDs.

High Voltage Coil Current Sensor for DC-DC Converters Employing DDCC

Directory of Open Access Journals (Sweden)

M. Drinovsky

2015-12-01

Full Text Available Current sensor is an integral part of every switching converter. It is used for over-current protection, regulation and in case of multiphase converters for balancing. A new high voltage current sensor for coil-based current sensing in DC-DC converters is presented. The sensor employs DDCC with high voltage input stage and gain trimming. The circuit has been simulated and implemented in 0.35 um BCD technology as part of a multiphase DC-DC converter where its function has been verified. The circuit is able to sustain common mode voltage on the input up to 40 V, it occupies 0.387*0.345 mm2 and consumes 3.2 mW typically.

Microwave pulse generation by photoconductive switching

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L.

1989-03-14

Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories (1) the frozen wave generator or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200..mu..J optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency. 3 refs., 6 figs.

Microwave pulse generation by photoconductive switching

Science.gov (United States)

Pocha, M. D.; Druce, R. L.

1989-03-01

Laser activated photoconductive semiconductor switching shows significant potential for application in high power microwave generation. Primary advantages of this concept are: small size, light weight, ruggedness, precise timing and phasing by optical control, and the potential for high peak power in short pulses. Several concepts have been suggested for microwave generation using this technology. They generally fall into two categories: (1) the frozen wave generator, or (2) tuned cavity modulation, both of which require only fast closing switches. We have been exploring a third possibility requiring fast closing and opening switches, that is the direct modulation of the switch at microwave frequencies. Switches have been fabricated at LLNL using neutron irradiated Gallium Arsenide which exhibit response times as short as 50 ps at low voltages. We are in the process of performing high voltage tests. So far, we have been able to generate 2.4 kV pulses with approximately 340 ps response time (FWHM) using approximately a 200 microJ optical pulse. Experiments are continuing to increase the voltage and improve the switching efficiency.

Control of a high-speed switched reluctance machine using only the DC-link measurements

NARCIS (Netherlands)

Marinkov, Sava; De Jager, Bram

2015-01-01

In this paper we present a novel speed control strategy for a high-speed Switched Reluctance Machine that uses only the DC-link voltage and current measurements. This eliminates a number of hardware components such as position, speed, phase current and phase voltage sensors. It further lowers the

Medium-voltage switching devices: State-of-the art on technical standards; Mittelspannungs-Schaltanlagen: Stand der technischen Normen

Energy Technology Data Exchange (ETDEWEB)

Voss, Gerhard [Ingenieurbuero IGV Elektrotechnik, Ladenburg (Germany)

2008-11-15

With enhanced exchange box systems many low voltage switch devices can be equipped more compact (less volume demand), cost friendly and more reliable because of advanced arc discharge safety engineering. Presented is utilization and operation in the facility managment and industrial applications in detail. In the last years operation-important standards have been revised for planners and users. So users and planners have to occupy with new standards for medium-voltage switching devices. This knowledge forms the conditions to design devices in future extensively to individual demands of the company and according to standards. (GL)

Power quality improvement in highly varying loads using thyristor-switched capacitor

Energy Technology Data Exchange (ETDEWEB)

Poshtan, M. [Petroleum Inst., Abu Dhabi (United Arab Emirates). Dept. of Electrical Engineering; Mokhtari, H.; Esmaeili, A. [Sharif Univ. of Technology, Tehran (Iran, Islamic Republic of). Dept. of Electrical Engineering

2007-07-01

Ordinary contactor-based-capacitor (CBC) banks may not be able to response quickly enough in highly varying electrical loads such as welding machines or arc furnace loads. Thyristor-switched capacitor (TSC) banks are therefore used to compensate for reactive power of highly varying loads. In this paper, the performance of a TSC was compared to CBC banks. The 2 systems, were also compared in terms of energy saving in transmission systems. Simulations carried out using PSCAD/EMTDC software showed that there was a considerable difference in the performance of the 2 systems. The shortcomings of existing CBC systems include slow response of mechanical switching systems; problem of switching more than one bank into the system; and, voltage/current transients during on-off switching. 3 refs., 6 tabs., 14 figs.

A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

Science.gov (United States)

Arevalo, L.; Wu, D.; Jacobson, B.

2013-08-01

The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

Fully on-chip switched capacitor NMOS low dropout voltage regulator

CERN Document Server

Camacho, D; Camacho, Daniel; Moreira, Paulo

2010-01-01

This paper presents a 1.5 V 50 mA low dropout voltage (LDO) regulator using an NMOS transistor as the output pass element. Continuous time,operation of the LDO is achieved using a new switched floating capacitor scheme that raises the gate voltage of the pass element. The regulator has a 0.2 V dropout at a 50 mA load and is stable for a wide load current range with loading capacitances up to 50 pF. The output variation when a full load step is applied is 300 mV and the recovery time is below 0.3 mu s. it is designed in a 0.13 mu m CMOS process with an area of 0.008 mm(2) and its operation does not require any external component.

Composite Material Switches

Science.gov (United States)

Javadi, Hamid (Inventor)

2002-01-01

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

Science.gov (United States)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Demonstration of Ultra-Fast Switching in Nano metallic Resistive Switching Memory Devices

International Nuclear Information System (INIS)

Yang, Y.

2016-01-01

Interdependency of switching voltage and time creates a dilemma/obstacle for most resistive switching memories, which indicates low switching voltage and ultra-fast switching time cannot be simultaneously achieved. In this paper, an ultra-fast (sub-100 ns) yet low switching voltage resistive switching memory device (“nano metallic ReRAM”) was demonstrated. Experimental switching voltage is found independent of pulse width (intrinsic device property) when the pulse is long but shows abrupt time dependence (“cliff”) as pulse width approaches characteristic RC time of memory device (extrinsic device property). Both experiment and simulation show that the onset of cliff behavior is dependent on physical device size and parasitic resistance, which is expected to diminish as technology nodes shrink down. We believe this study provides solid evidence that nano metallic resistive switching memory can be reliably operated at low voltage and ultra-fast regime, thus beneficial to future memory technology.

Ferroelectric switch for a high-power Ka-band active pulse compressor

Energy Technology Data Exchange (ETDEWEB)

Hirshfield, Jay L. [Omega-P, Inc., New Haven, CT (United States)

2013-12-18

Results are presented for design of a high-power microwave switch for operation at 34.3 GHz, intended for use in an active RF pulse compressor. The active element in the switch is a ring of ferroelectric material, whose dielectric constant can be rapidly changed by application of a high-voltage pulse. As envisioned, two of these switches would be built into a pair of delay lines, as in SLED-II at SLAC, so as to allow 30-MW μs-length Ka-band pulses to be compressed in time by a factor-of-9 and multiplied in amplitude to generate 200 MW peak power pulses. Such high-power pulses could be used for testing and evaluation of high-gradient mm-wave accelerator structures, for example. Evaluation of the switch design was carried out with an X-band (11.43 GHz) prototype, built to incorporate all the features required for the Ka-band version.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

Science.gov (United States)

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

Science.gov (United States)

Cui, B. S.; Guo, X. B.; Wu, K.; Li, D.; Zuo, Y. L.; Xi, L.

2016-03-01

Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe65Co35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (~4 GPa for PI as compared to ~180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work.

Thickness dependence of voltage-driven magnetization switching in FeCo/PI/piezoelectric actuator heterostructures

International Nuclear Information System (INIS)

Cui, B S; Guo, X B; Wu, K; Li, D; Zuo, Y L; Xi, L

2016-01-01

Strain mediated magnetization switching of ferromagnetic/substrate/piezoelectric actuator heterostructures has become a hot issue due to the advantage of low-power consumption. In this work, Fe 65 Co 35 thin films were deposited on a flexible polyamides (PI) substrate, which has quite low Young’s module (∼4 GPa for PI as compared to ∼180 GPa for Si) and benefits from complete transfer of the strain from the piezoelectric actuator to magnetic thin films. A complete 90° transition of the magnetic easy axis was realized in 50 nm thick FeCo films under the voltage of 70 V, while a less than 90° rotation angle of the magnetic easy axis direction was observed in other samples, which was ascribed to the distribution of the anisotropy field and/or the orthogonal misalignment between stress induced anisotropy and original uniaxial anisotropy. A model considering two uniaxial anisotropies with orthogonal arrangement was used to quantitatively understand the observed results and the linear-like voltage dependent anisotropy field, especially for 10 nm FeCo films, in which the switching mechanism along the easy axis direction can be explained by the domain wall depinning model. It indicates that the magnetic domain-wall movement velocity may be controlled by strain through tuning the energy barrier of the pinning in heterostructures. Moreover, voltage-driven 90° magnetization switching with low-power consumption was achieved in this work. (paper)

Design and development of high voltage and high frequency center tapped transformer for HVDC test generator

International Nuclear Information System (INIS)

Thaker, Urmil; Saurabh Kumar; Amal, S.; Baruah, U.K.; Bhatt, Animesh

2015-01-01

A High Voltage center tapped transformer for high frequency application had been designed, fabricated, and tested. It was designed as a part of 200 kV HVDC Test Generator. The High Frequency operation of transformer increases power density. Therefore it is possible to reduce power supply volume. The step up ratio in High Voltage transformer is limited due to stray capacitance and leakage inductance. The limit was overcome by winding multi secondary outputs. Switching frequency of transformer was 15.8 kHz. Input and output voltages of transformer were 270V and 16.5kV-0V-16.5kV respectively. Power rating of transformer is 7kVA. High Voltage transformer with various winding and core arrangement was fabricated to check variation in electrical characteristics. The transformer used a ferrite core (E Type) and nylon insulated primary and secondary bobbins. Two set of E-E geometry cores had been stacked in order to achieve the estimated core volume. Compared with traditional high voltage transformer, this transformer had good thermal behavior, good line insulation properties and a high power density. In this poster, design procedures, development stages and test results of high voltage and high frequency transformer are presented. Results of various parameters such as transformer loss, temperature rise, insulation properties, impedance of primary and secondary winding, and voltage regulation are discussed. (author)

Reverse bistable effect in ferroelectric liquid crystal devices with ultra-fast switching at low driving voltage.

Science.gov (United States)

Guo, Qi; Zhao, Xiaojin; Zhao, Huijie; Chigrinov, V G

2015-05-15

In this Letter, reverse bistable effect with deep-sub-millisecond switching time is first reported in ferroelectric liquid crystal (FLC) devices using a homogeneous photo-alignment technique. It is indicated by our experimental results that both the anchoring energy and the dielectric property of the FLC's alignment layer is critical for the existence of the reverse bistable effect. In addition, with the derived criteria of the reverse bistable effect, we quantitatively analyze the switching dynamics of the reverse bistable FLC and the transition condition between the traditional bistability and our presented reverse bistability. Moreover, the fabricated FLC device exhibits an ultra-fast switching of ∼160  μs and a high contrast ratio of 1000:1, both of which were measured at a low driving voltage of 11 V. The featured deep-sub-millisecond switching time is really advantageous for our presented reverse bistable FLC devices, which enables a significant quality improvement of the existing optical devices, as well as a wide range of new applications in photonics and display areas.

A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

Science.gov (United States)

Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

2012-01-01

This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

Resistive switching and voltage induced modulation of tunneling magnetoresistance in nanosized perpendicular organic spin valves

Directory of Open Access Journals (Sweden)

Robert Göckeritz

2016-04-01

Full Text Available Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La0.7Sr0.3MnO3/Alq3/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as high as -70% the latter even changing sign when voltage pulses are applied. This combination of phenomena is typically observed in multiferroic tunnel junctions where it is attributed to magnetoelectric coupling between a ferromagnet and a ferroelectric material. Modeling indicates that here the switching originates from a modification of the La0.7Sr0.3MnO3 surface. This modification influences the tunneling of charge carriers and thus both the electrical resistance and the tunneling magnetoresistance which occurs at pinholes in the organic layer.

High Efficiency Boost Converter with Three State Switching Cell

DEFF Research Database (Denmark)

Klimczak, Pawel; Munk-Nielsen, Stig

2009-01-01

is on performance improvement of this type of the converter. Use of foil windings helps to reduce conduction losses in magnetic components and to reduce size of these components. Also it has been demonstrated that the regulation range of this type of converter can be increased by operation with duty cycle lower......The boost converter with the three-state switching cell seems to be a good candidate for a dc-dc stage for non-isolated generators based on alternative energy sources. It provides a high voltage gain, a reduced voltage stress on transistors and limited input current ripples. In this paper the focus...

A Series-LC-Filtered Active Trap Filter for High Power Voltage Source Inverter

DEFF Research Database (Denmark)

Bai, Haofeng; Wang, Xiongfei; Loh, Poh Chiang

2016-01-01

Passive trap filters are widely used in high power Voltage Source Inverters (VSI) for the switching harmonic attenuation. The usage of the passive trap filters requires clustered and fixed switching harmonic spectrum, which is not the case for low pulse-ratio or Variable Switching Frequency (VSF...... current control of the auxiliary converter, which can be challenging considering that the switching harmonics have very high orders. In this paper, an Active Trap Filter (ATF) based on output impedance shaping is proposed. It is able to bypass the switching harmonics by providing nearly zero output...... impedance. A series-LC-filter is used to reduce the power rating and synthesize the desired output impedance of the ATF. Compared with the existing approaches, the compensated frequency range is greatly enlarged. Also, the current reference is simply set to zero, which reduces the complexity of the control...

High voltage photo switch package module

Science.gov (United States)

Sullivan, James S; Sanders, David M; Hawkins, Steven A; Sampayan, Stephen E

2014-02-18

A photo-conductive switch package module having a photo-conductive substrate or wafer with opposing electrode-interface surfaces, and at least one light-input surface. First metallic layers are formed on the electrode-interface surfaces, and one or more optical waveguides having input and output ends are bonded to the substrate so that the output end of each waveguide is bonded to a corresponding one of the light-input surfaces of the photo-conductive substrate. This forms a waveguide-substrate interface for coupling light into the photo-conductive wafer. A dielectric material such as epoxy is then used to encapsulate the photo-conductive substrate and optical waveguide so that only the metallic layers and the input end of the optical waveguide are exposed. Second metallic layers are then formed on the first metallic layers so that the waveguide-substrate interface is positioned under the second metallic layers.

High voltage systems

International Nuclear Information System (INIS)

Martin, M.

1991-01-01

Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

Science.gov (United States)

Wang, Xue-Feng; Tian, He; Zhao, Hai-Ming; Zhang, Tian-Yu; Mao, Wei-Quan; Qiao, Yan-Cong; Pang, Yu; Li, Yu-Xing; Yang, Yi; Ren, Tian-Ling

2018-01-01

Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS 2 )-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfO x )-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfO x layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS 2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A 70 kV solid-state high voltage pulse generator based on saturable pulse transformer.

Science.gov (United States)

Fan, Xuliang; Liu, Jinliang

2014-02-01

High voltage pulse generators are widely applied in many fields. In recent years, solid-state and operating at repetitive mode are the most important developing trends of high voltage pulse generators. A solid-state high voltage pulse generator based on saturable pulse transformer is proposed in this paper. The proposed generator is consisted of three parts. They are charging system, triggering system, and the major loop. Saturable pulse transformer is the key component of the whole generator, which acts as a step-up transformer and main switch during working process of this generator. The circuit and working principles of the proposed pulse generator are introduced first in this paper, and the saturable pulse transformer used in this generator is introduced in detail. Circuit of the major loop is simulated to verify the design of the system. Demonstration experiments are carried out, and the results show that when the primary energy storage capacitor is charged to a high voltage, such as 2.5 kV, a voltage with amplitude of 86 kV can be achieved on the secondary winding. The magnetic core of saturable pulse transformer is saturated deeply and the saturable inductance of the secondary windings is very small. The switch function of the saturable pulse transformer can be realized ideally. Therefore, a 71 kV output voltage pulse is formed on the load. Moreover, the magnetic core of the saturable pulse transformer can be reset automatically.

MCT/MOSFET Switch

Science.gov (United States)

Rippel, Wally E.

1990-01-01

Metal-oxide/semiconductor-controlled thyristor (MCT) and metal-oxide/semiconductor field-effect transistor (MOSFET) connected in switching circuit to obtain better performance. Offers high utilization of silicon, low forward voltage drop during "on" period of operating cycle, fast turnon and turnoff, and large turnoff safe operating area. Includes ability to operate at high temperatures, high static blocking voltage, and ease of drive.

Computational and experimental progress on laser-activated gas avalanche switches for broadband, high-power electromagnetic pulse generation

International Nuclear Information System (INIS)

Mayhall, D.J.; Yee, J.H.; Villa, F.

1991-01-01

This paper discusses the gas avalanche switch, a high-voltage, picosecond-speed switch, which has been proposed. The basic switch consists of pulse-charged electrodes, immersed in a high-pressure gas. An avalanche discharge is induced in the gas between the electrodes by ionization from a picosecond-scale laser pulse. The avalanching electrons move toward the anode, causing the applied voltage to collapse in picoseconds. This voltage collapse, if rapid enough, generates electromagnetic waves. A two-dimensional (2D), finite difference computer code solves Maxwell's equations for transverse magnetic modes for rectilinear electrodes between parallel plate conductors, along with electron conservation equations for continuity, momentum, and energy. Collision frequencies for ionization and momentum and energy transfer to neutral molecules are assumed to scale linearly with neutral pressure. Electrode charging and laser-driven electron deposition are assumed to be instantaneous. Code calculations are done for a pulse generator geometry, consisting of an 0.7 mm wide by 0.8 mm high, beveled, rectangular center electrode between grounded parallel plates at 2 mm spacing in air

Negative voltage modulated multi-level resistive switching by using a Cr/BaTiOx/TiN structure and quantum conductance through evidence of H2O2 sensing mechanism.

Science.gov (United States)

Chakrabarti, Somsubhra; Ginnaram, Sreekanth; Jana, Surajit; Wu, Zong-Yi; Singh, Kanishk; Roy, Anisha; Kumar, Pankaj; Maikap, Siddheswar; Qiu, Jian-Tai; Cheng, Hsin-Ming; Tsai, Ling-Na; Chang, Ya-Ling; Mahapatra, Rajat; Yang, Jer-Ren

2017-07-05

Negative voltage modulated multi-level resistive switching with quantum conductance during staircase-type RESET and its transport characteristics in Cr/BaTiO x /TiN structure have been investigated for the first time. The as-deposited amorphous BaTiO x film has been confirmed by high-resolution transmission electron microscopy. X-ray photo-electron spectroscopy shows different oxidation states of Ba in the switching material, which is responsible for tunable more than 10 resistance states by varying negative stop voltage owing to slow decay value of RESET slope (217.39 mV/decade). Quantum conductance phenomenon has been observed in staircase RESET cycle of the memory devices. By inspecting the oxidation states of Ba + and Ba 2+ through measuring H 2 O 2 with a low concentration of 1 nM in electrolyte/BaTiO x /SiO 2 /p-Si structure, the switching mechanism of each HRS level as well as the multi-level phenomenon has been explained by gradual dissolution of oxygen vacancy filament. Along with negative stop voltage modulated multi-level, current compliance dependent multi-level has also been demonstrated and resistance ratio up to 2000 has been achieved even for a thin (voltage switching curve has been simulated as well. Hence, multi-level resistive switching of Cr/BaTiO x /TiN structure implies the promising applications in high dense, multistate non-volatile memories in near future.

A High-Precision Control for a ZVT PWM Soft-Switching Inverter to Eliminate the Dead-Time Effect

Directory of Open Access Journals (Sweden)

Baoquan Kou

2016-07-01

Full Text Available Attributing to the advantages of high efficiency, low electromagnetic interference (EMI noise and closest to the pulse-width-modulation (PWM converter counterpart, zero-voltage-transition (ZVT PWM soft-switching inverters are very suitable for high-performance applications. However, the conventional control algorithms intended for high efficiency generally results in voltage distortion. Thus, this paper, for the first time, proposes a high-precision control method to eliminate the dead-time effect through controlling the auxiliary current in the auxiliary resonant snubber inverter (ARSI, which is a typical ZVT PWM inverter. The dead-time effect of ARSI is analyzed, which is distinguished from hard-switching inverters. The proposed high-precision control is introduced based on the investigation of dead-time effect. A prototype was developed to verify the effectiveness of the proposed control. The experimental results shows that the total harmonic distortion (THD of the output current of the ARSI can be reduced compared with that of the hard-switching inverter, because the blanking delay error is eliminated. The quality of the output current and voltage can be further improved by utilizing the proposed control method.

Wide Bandgap Extrinsic Photoconductive Switches

Energy Technology Data Exchange (ETDEWEB)

Sullivan, James S. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.

Mobile high-voltage switchboard. Variable and uncomplicated; Mobile Hochspannungsschaltanlage. Variabel und unkompliziert in der Anwendung

Energy Technology Data Exchange (ETDEWEB)

Albert, Andreas [Siemens AG, Erlangen (Germany). Sector Energy

2009-07-13

The mobile high-voltage switchboard ''REE-Movil 2'' for voltages up to 245 kV provides a complete and nearly autonomous switchboard in a container, a solution that has been available in the medium-voltage sector for some time already. It can be used whenever a quick replacement of a switchboard section or a temporary supplement to a switching substation is needed. The container is mounted on a trailer for maximum flexibility and mobility. (orig.)

Resistive switching behavior of SiOx layers with Si nanoparticles

International Nuclear Information System (INIS)

Nesheva, D; Pantchev, B; Manolov, E; Dzhurkov, V; Nedev, N; Valdez, B; Nedev, R

2017-01-01

First results on resistive switching in SiO x film containing crystalline silicon nanoparticles are reported. SiO x layers ( x = 1.15) with thickness of 50 nm were deposited on n-Si crystalline substrates and annealed for 60 min at 1000 o C to grow crystalline nanoparticles. Part of the samples were annealed in an inert atmosphere, while the rest were subjected to a two-step (O 2 +N 2 /N 2 ) annealing process. Current-voltage (I-V) characteristics were by applying positive or negative voltage to the top contact. For both types of samples the I-V characteristics were asymmetric with lower currents measured at negative voltage, especially in the case of two-step annealed samples. In most of the N 2 annealed structures switching behavior high-low/low-high resistance state was observed in both polarities at voltages with amplitudes in the range (2 - 4) V. Uncontrolled switching low/high resistance was also seen, more frequently at positive voltages. In contrast, the two-step annealed samples showed stable behavior. The transition high-low resistance state was achieved by negative voltages in the (-2, -5) V range leading to an increase of the current by more than three orders of magnitude. The structures were reset to the high resistive state, by positive voltage in the range (3 - 4) V. Uncontrolled switching was not observed in the two-step annealed samples for both polarities and they showed higher reliability regarding the number of switching cycles. (paper)

Voltage-induced switching of an antiferromagnetically ordered topological Dirac semimetal

Science.gov (United States)

Kim, Youngseok; Kang, Kisung; Schleife, André; Gilbert, Matthew J.

2018-04-01

An antiferromagnetic semimetal has been recently identified as a new member of topological semimetals that may host three-dimensional symmetry-protected Dirac fermions. A reorientation of the Néel vector may break the underlying symmetry and open a gap in the quasiparticle spectrum, inducing the (semi)metal-insulator transition. Here, we predict that such a transition may be controlled by manipulating the chemical potential location of the material. We perform both analytical and numerical analysis on the thermodynamic potential of the model Hamiltonian and find that the gapped spectrum is preferred when the chemical potential is located at the Dirac point. As the chemical potential deviates from the Dirac point, the system shows a possible transition from the gapped to the gapless phase and switches the corresponding Néel vector configuration. We perform density functional theory calculations to verify our analysis using a realistic material and discuss a two terminal transport measurement as a possible route to identify the voltage-induced switching of the Néel vector.

Voltage- and current-activated metal–insulator transition in VO2-based electrical switches: a lifetime operation analysis

Directory of Open Access Journals (Sweden)

Aurelian Crunteanu, Julien Givernaud, Jonathan Leroy, David Mardivirin, Corinne Champeaux, Jean-Christophe Orlianges, Alain Catherinot and Pierre Blondy

2010-01-01

Full Text Available Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal–insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal–insulator transition in VO2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO2-based switching (more than 260 million cycles without failure compared with the voltage-activated mode (breakdown at around 16 million activation cycles. The evolution of the electrical self-oscillations of a VO2-based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

National Research Council Canada - National Science Library

Swaminathan, Vishnu; Chakrabarty, Krishnendu

2005-01-01

We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real-time systems, and present a new approach for scheduling workloads containing periodic tasks...

High frequency modulation circuits based on photoconductive wide bandgap switches

Science.gov (United States)

Sampayan, Stephen

2018-02-13

Methods, systems, and devices for high voltage and/or high frequency modulation. In one aspect, an optoelectronic modulation system includes an array of two or more photoconductive switch units each including a wide bandgap photoconductive material coupled between a first electrode and a second electrode, a light source optically coupled to the WBGP material of each photoconductive switch unit via a light path, in which the light path splits into multiple light paths to optically interface with each WBGP material, such that a time delay of emitted light exists along each subsequent split light path, and in which the WBGP material conducts an electrical signal when a light signal is transmitted to the WBGP material, and an output to transmit the electrical signal conducted by each photoconductive switch unit. The time delay of the photons emitted through the light path is substantially equivalent to the time delay of the electrical signal.

High voltage engineering

CERN Document Server

Rizk, Farouk AM

2014-01-01

Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

Piezo Voltage Controlled Planar Hall Effect Devices.

Science.gov (United States)

Zhang, Bao; Meng, Kang-Kang; Yang, Mei-Yin; Edmonds, K W; Zhang, Hao; Cai, Kai-Ming; Sheng, Yu; Zhang, Nan; Ji, Yang; Zhao, Jian-Hua; Zheng, Hou-Zhi; Wang, Kai-You

2016-06-22

The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.

Amorphous metal based nanoelectromechanical switch

KAUST Repository

Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

2013-01-01

Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

Amorphous metal based nanoelectromechanical switch

KAUST Repository

Mayet, Abdulilah M.

2013-04-01

Nanoelectromechanical (NEM) switch is an interesting ultra-low power option which can operate in the harsh environment and can be a complementary element in complex digital circuitry. Although significant advancement is happening in this field, report on ultra-low voltage (pull-in) switch which offers high switching speed and area efficiency is yet to be made. One key challenge to achieve such characteristics is to fabricate nano-scale switches with amorphous metal so the shape and dimensional integrity are maintained to achieve the desired performance. Therefore, we report a tungsten alloy based amorphous metal with fabrication process development of laterally actuated dual gated NEM switches with 100 nm width and 200 nm air-gap to result in <5 volts of actuation voltage (Vpull-in). © 2013 IEEE.

Development of a switched integrator amplifier for high-accuracy optical measurements

International Nuclear Information System (INIS)

Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

2008-01-01

In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed

Development of a switched integrator amplifier for high-accuracy optical measurements.

Science.gov (United States)

Mountford, John; Porrovecchio, Geiland; Smid, Marek; Smid, Radislav

2008-11-01

In the field of low flux optical measurements, the development and use of large area silicon detectors is becoming more frequent. The current/voltage conversion of their photocurrent presents a set of problems for traditional transimpedance amplifiers. The switched integration principle overcomes these limitations. We describe the development of a fully characterized current-voltage amplifier using the switched integrator technique. Two distinct systems have been developed in parallel at the United Kingdom's National Physical Laboratory (NPL) and Czech Metrology Institute (CMI) laboratories. We present the circuit theory and best practice in the design and construction of switched integrators. In conclusion the results achieved and future developments are discussed.

Fundamental studies on the switching in liquid nitrogen environment using vacuum switches for application in future high-temperature superconducting medium-voltage power grids

International Nuclear Information System (INIS)

Golde, Karsten

2016-01-01

By means of superconducting equipment it is possible to reduce the transmission losses in distribution networks while increasing the transmission capacity. As a result even saving a superimposed voltage level would be possible, which can put higher investment costs compared to conventional equipment into perspective. For operation of superconducting systems it is necessary to integrate all equipment in the cooling circuit. This also includes switchgears. Due to cooling with liquid nitrogen, however, only vacuum switching technology comes into question. Thus, the suitability of vacuum switches is investigated in this work. For this purpose the mechanics of the interrupters is considered first. Material investigations and switching experiments at ambient temperature and in liquid nitrogen supply information on potential issues. For this purpose, a special pneumatic construction is designed, which allows tens of thousands of switching cycles. Furthermore, the electrical resistance of the interrupters is considered. Since the contact system consists almost exclusively of copper, a remaining residual resistance and appropriate thermal losses must be considered. Since they have to be cooled back, an appropriate evaluation is given taking environmental parameters into account. The dielectric strength of vacuum interrupters is considered both at ambient temperature as well as directly in liquid nitrogen. For this purpose different contact distances are set at different interrupter types. A distinction is made between internal and external dielectric strength. Conditioning and deconditioning effects are minimized by an appropriate choice of the test circuit. The current chopping and resulting overvoltages are considered to be one of the few drawbacks of vacuum switching technology. Using a practical test circuit the height of chopping current is determined and compared for different temperatures. Due to strong scattering the evaluation is done using statistical methods. At

Selective irradiation for fast switching thyristor with low forward voltage drop

International Nuclear Information System (INIS)

Brown, J.L.

1975-01-01

The switching speed of a thyristor is increased without correspondingly increasing the forward voltage drop by selectively irradiating at least portions of the PN junction between the conducting and gating portions, and 5 to 30 percent of the adjacent surface area of the conducting portions of the device. 50 to 100 percent of the surface area of the gating portions, and the peripheral portions can also be irradiated at the same time to decrease gate sensitivity and increase blocking voltage of the thyristor, respectively. Preferably, the thyristor is irradiated with electron radiation which preferably is of an intensity greater than 1 MeV and most desirably about 2 MeV. The electron irradiation is preferably to a dosage of between about 1 x 10 13 electrons/cm 2 and 1 x 10 15 electrons/cm 2 . (auth)

Investigating the Effect of Voltage-Switching on Low-Energy Task Scheduling in Hard Real-Time Systems

Science.gov (United States)

2005-01-01

We investigate the effect of voltage-switching on task execution times and energy consumption for dual-speed hard real - time systems , and present a...scheduling algorithm and apply it to two real-life task sets. Our results show that energy can be conserved in embedded real - time systems using energy...aware task scheduling. We also show that switching times have a significant effect on the energy consumed in hard real - time systems .

Online Optimal Switching Frequency Selection for Grid-Connected Voltage Source Inverters

Directory of Open Access Journals (Sweden)

Saher Albatran

2017-12-01

Full Text Available Enhancing the performance of the voltage source inverters (VSIs without changing the hardware structure has recently acquired an increased amount of interest. In this study, an optimization algorithm, enhancing the quality of the output power and the efficiency of three-phase grid connected VSIs is proposed. Towards that end, the proposed algorithm varies the switching frequency (fsw to maintain the best balance between switching losses of the insulated-gate-bipolar-transistor (IGBT power module as well as the output power quality under all loading conditions, including the ambient temperature effect. Since there is a contradiction with these two measures in relation to the switching frequency, the theory of multi-objective optimization is employed. The proposed algorithm is executed on the platform of Altera® DE2-115 field-programmable-gate-array (FPGA in which the optimal value of the switching frequency is determined online without the need for heavy offline calculations and/or lookup tables. With adopting the proposed algorithm, there is an improvement in the VSI efficiency without degrading the output power quality. Therefore, the proposed algorithm enhances the lifetime of the IGBT power module because of reduced variations in the module’s junction temperature. An experimental prototype is built, and experimental tests are conducted for the verification of the viability of the proposed algorithm.

Constant Switching Frequency Self-Oscillating Controlled Class-D Amplifiers

DEFF Research Database (Denmark)

Nguyen-Duy, Khiem; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

The self-oscillating control approach has been used extensively in class-D amplifiers. It has several advantages such as high bandwidth and high audio performance. However, one of the primary disadvantages in a self-oscillating controlled system is that the switching frequency of the amplifier...... varies with the ratio of the output voltage to the input rail voltage. In other words, the switching frequency varies with the duty cycle of the output. The drop in the frequency results in lower control bandwidth and higher output voltage ripple, which are undesirable. This paper proposes a new self-oscillating...... control scheme that maintains a constant switching frequency over the full range of output voltage. The frequency difference is processed by a compensator whose output adjusts the total loop gain of the control system. It has been proven by simulation that a con-stant switching frequency self-oscillating...

High Voltage GaN Schottky Rectifiers

Energy Technology Data Exchange (ETDEWEB)

CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

1999-10-25

Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

Energy reversible switching from amorphous metal based nanoelectromechanical switch

KAUST Repository

Mayet, Abdulilah M.; Smith, Casey; Hussain, Muhammad Mustafa

2013-01-01

We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young's modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young's modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

Energy reversible switching from amorphous metal based nanoelectromechanical switch

KAUST Repository

Mayet, Abdulilah M.

2013-08-01

We report observation of energy reversible switching from amorphous metal based nanoelectromechanical (NEM) switch. For ultra-low power electronics, NEM switches can be used as a complementary switching element in many nanoelectronic system applications. Its inherent zero power consumption because of mechanical detachment is an attractive feature. However, its operating voltage needs to be in the realm of 1 volt or lower. Appropriate design and lower Young\\'s modulus can contribute achieving lower operating voltage. Therefore, we have developed amorphous metal with low Young\\'s modulus and in this paper reporting the energy reversible switching from a laterally actuated double electrode NEM switch. © 2013 IEEE.

High Current, Low Voltage Power Converter [20kA, 6V] LHC Converter Prototype

CERN Document Server

Jørgensen, H E; Dupaquier, A; Fernqvist, G

1998-01-01

The superconducting LHC accelerator requires high currents (~12.5kA) and relatively low voltages (~10 V) for its magnets. The need to install the power converters underground is the driving force for reduced volume and high efficiency. Moreover, the LHC machine will require a very high level of performance from the power converters, particularly in terms of DC stability, dynamic response and also in matters of EMC. To meet these requirements soft-switching techniques will be used. This paper describes the development of a [20kA,6V] power converter intended as a stable high-current source for D CCT calibration and an evaluation prototype for the future LHC converters. The converter is made with a modular concept with five current sources [4kA,6V] in parallel. The 4kA sources are built as plu g-in modules: a diode rectifier on the AC mains with a damped L-C passive filter, a Zero Voltage Switching inverter working at 20 kHz and an output stage (high frequency transformers, Schottky rectifi ers and output filter...

Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

DEFF Research Database (Denmark)

Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger

2016-01-01

An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study...

Switched-capacitor isolated LED driver

Science.gov (United States)

Sanders, Seth R.; Kline, Mitchell

2016-03-22

A switched-capacitor voltage converter which is particularly well-suited for receiving a line voltage from which to drive current through a series of light emitting diodes (LEDs). Input voltage is rectified in a multi-level rectifier network having switched capacitors in an ascending-bank configuration for passing voltages in uniform steps between zero volts up to full received voltage V.sub.DC. A regulator section, operating on V.sub.DC, comprises switched-capacitor stages of H-bridge switching and flying capacitors. A current controlled oscillator drives the states of the switched-capacitor stages and changes its frequency to maintain a constant current to the load. Embodiments are described for isolating the load from the mains, utilizing an LC tank circuit or a multi-primary-winding transformer.

A High-Efficiency Voltage Equalization Scheme for Supercapacitor Energy Storage System in Renewable Generation Applications

Directory of Open Access Journals (Sweden)

Liran Li

2016-06-01

Full Text Available Due to its fast charge and discharge rate, a supercapacitor-based energy storage system is especially suitable for power smoothing in renewable energy generation applications. Voltage equalization is essential for series-connected supercapacitors in an energy storage system, because it supports the system’s sustainability and maximizes the available cell energy. In this paper, we present a high-efficiency voltage equalization scheme for supercapacitor energy storage systems in renewable generation applications. We propose an improved isolated converter topology that uses a multi-winding transformer. An improved push-pull forward circuit is applied on the primary side of the transformer. A coupling inductor is added on the primary side to allow the switches to operate under the zero-voltage switching (ZVS condition, which reduces switching losses. The diodes in the rectifier are replaced with metal-oxide-semiconductor field-effect transistors (MOSFETs to reduce the power dissipation of the secondary side. In order to simplify the control, we designed a controllable rectifying circuit to achieve synchronous rectifying on the secondary side of the transformer. The experimental results verified the effectiveness of the proposed design.

Effect of gold nano-particles on switch-on voltage and relaxation frequency of nematic liquid crystal cell

Directory of Open Access Journals (Sweden)

M. Inam

2011-12-01

Full Text Available We report the observation of large changes in the electro-optical properties of nematic liquid crystal (NLC due to inclusion of small concentration of 10 nm diameter gold nanoparticles (GNPs. It is observed that GNPs lower switch-on voltage and also lower the relaxation frequency with applied voltage (AC field to NLC cell. These studies of GNP doped NLC cell have been done using optical interferometry and capacity measurement by impedance analyzer. The change in threshold voltage and relaxation frequency by doping GNPs in NLC is explained theoretically.

Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

Science.gov (United States)

Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

2018-02-01

In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

Method and system for a gas tube-based current source high voltage direct current transmission system

Science.gov (United States)

She, Xu; Chokhawala, Rahul Shantilal; Bray, James William; Sommerer, Timothy John; Zhou, Rui; Zhang, Di

2017-08-29

A high-voltage direct-current (HVDC) transmission system includes an alternating current (AC) electrical source and a power converter channel that includes an AC-DC converter electrically coupled to the electrical source and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and the DC-AC inverter each include a plurality of legs that includes at least one switching device. The power converter channel further includes a commutating circuit communicatively coupled to one or more switching devices. The commutating circuit is configured to "switch on" one of the switching devices during a first portion of a cycle of the H-bridge switching circuits and "switch off" the switching device during a second portion of the cycle of the first and second H-bridge switching circuits.

High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

Directory of Open Access Journals (Sweden)

Tejinder Singh

2014-01-01

Full Text Available This paper presents a novel design of single-pole four-throw (SP4T RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

Technological Aspects: High Voltage

CERN Document Server

Faircloth, D.C.

2013-12-16

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

Energy Technology Data Exchange (ETDEWEB)

Erofeev, E. V., E-mail: erofeev@micran.ru [Tomsk State University of Control Systems and Radioelectronics, Research Institute of Electrical-Communication Systems (Russian Federation); Fedin, I. V.; Kutkov, I. V. [Research and Production Company “Micran” (Russian Federation); Yuryev, Yu. N. [National Research Tomsk Polytechnic University, Institute of Physics and Technology (Russian Federation)

2017-02-15

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

International Nuclear Information System (INIS)

Erofeev, E. V.; Fedin, I. V.; Kutkov, I. V.; Yuryev, Yu. N.

2017-01-01

High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V_t_h = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V_t_h = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

A new soft-switched high step-up DC-DC converter with dual coupled inductors

DEFF Research Database (Denmark)

Forouzesh, Mojtaba; Shen, Yanfeng; Yari, Keyvan

2017-01-01

This paper introduces a new efficient high step-up dc-dc converter with a shared input path and dual series coupled inductors at the output. This converter is suitable for high power applications due to its shared input current that puts low current stresses on the low voltage side switches...

Technological Aspects: High Voltage

International Nuclear Information System (INIS)

Faircloth, D C

2013-01-01

This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

Regulation of the forming process and the set voltage distribution of unipolar resistance switching in spin-coated CoFe2O4 thin films.

Science.gov (United States)

Mustaqima, Millaty; Yoo, Pilsun; Huang, Wei; Lee, Bo Wha; Liu, Chunli

2015-01-01

We report the preparation of (111) preferentially oriented CoFe2O4 thin films on Pt(111)/TiO2/SiO2/Si substrates using a spin-coating process. The post-annealing conditions and film thickness were varied for cobalt ferrite (CFO) thin films, and Pt/CFO/Pt structures were prepared to investigate the resistance switching behaviors. Our results showed that resistance switching without a forming process is preferred to obtain less fluctuation in the set voltage, which can be regulated directly from the preparation conditions of the CFO thin films. Therefore, instead of thicker film, CFO thin films deposited by two times spin-coating with a thickness about 100 nm gave stable resistance switching with the most stable set voltage. Since the forming process and the large variation in set voltage have been considered as serious obstacles for the practical application of resistance switching for non-volatile memory devices, our results could provide meaningful insights in improving the performance of ferrite material-based resistance switching memory devices.

Resistance Switching Characteristics in ZnO-Based Nonvolatile Memory Devices

Directory of Open Access Journals (Sweden)

Fu-Chien Chiu

2013-01-01

Full Text Available Bipolar resistance switching characteristics are demonstrated in Pt/ZnO/Pt nonvolatile memory devices. A negative differential resistance or snapback characteristic can be observed when the memory device switches from a high resistance state to a low resistance state due to the formation of filamentary conducting path. The dependence of pulse width and temperature on set/reset voltages was examined in this work. The exponentially decreasing trend of set/reset voltage with increasing pulse width is observed except when pulse width is larger than 1 s. Hence, to switch the ZnO memory devices, a minimum set/reset voltage is required. The set voltage decreases linearly with the temperature whereas the reset voltage is nearly temperature-independent. In addition, the ac cycling endurance can be over 106 switching cycles, whereas, the dependence of HRS/LRS resistance distribution indicates that a significant memory window closure may take place after about 102  dc switching cycles.

The control system based on PXI technology for high voltage power supply

International Nuclear Information System (INIS)

Chen Dehong; Zhang Ming; Ma Shaoxiang; Xia Linglong; Zeng Zhen; Zhang Xueliang; Wang Chuliang; Yu Kexun

2014-01-01

A 100 kV/60 A high voltage power supply (HVPS) is being developed to carry some auxiliary heating research on J-TEXT and supply the auxiliary heating system. The power supply which consists of 144 switch modules is based on PSM technology. For the requirement of isolation, control and protection, a control system based on the PCI extensions for instrumentation (PXI) which meets up with the CODAC standards is designed with developed PSM technology for the high voltage power supply. The compact structure of hardware in the control system is presented too. And the control strategy which is based on shift phase pulse width modulation is discussed Some tests are performed on the control system to validate the control strategy, the experimental results show that the system has a good control performance and fast response, which meets the control requirement of 100 kV/60 A high voltage power supply. (authors)

Analysis on voltage oscillation of a mid-frequency series resonant inverter for DRMP coils on J-TEXT

Energy Technology Data Exchange (ETDEWEB)

Liu, Long-jian, E-mail: liulongjian001@yeah.net [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China); Yu, Ke-xun; Zhang, Ming; Nan, Jie-yin; Jiang, Guo-zhong; Rao, Bo; Li, Xuan [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, Huazhong University of Science and Technology, Wuhan 430074 (China); School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074 (China)

2016-01-15

Highlights: • The reason of high-voltage oscillation of a series resonant inverter for DRMP coils is analyzed. • The condition or method for reduction of high-voltage oscillation is discussed. • The considerations of dead time and switch frequency for reduction of high-voltage oscillation are discussed. - Abstract: This paper deals with the voltage oscillation of an AC power supply for generating dynamic magnetic perturbation (DRMP) on J-TEXT. The power supply is a series resonant inverter with a matching transformer. It was noted that the high-voltage oscillation at transformer primary side is caused by an interaction between the line inductance and the stray capacitance of the matching transformer at switching transitions. In order to reduce the high-voltage oscillation and consider the requirement for soft-switching technique simultaneously, the switching frequency should be chosen properly by fine-tuning. The dead time should be chosen according to the relative size of minimum required dead time for protection and the optimal dead time.

An improved soft switched PWM interleaved boost AC-DC converter

International Nuclear Information System (INIS)

Genc, Naci; Iskender, Ires

2011-01-01

In this paper, an improved soft switched two cell interleaved boost AC/DC converter with high power factor is proposed and investigated. A new auxiliary circuit is designed and added to two cell interleaved boost converter to reduce the switching losses. The proposed auxiliary circuit is implemented using only one auxiliary switch and a minimum number of passive components without an important increase in the cost and complexity of the converter. The main advantage of this auxiliary circuit is that it not only provides zero-voltage-transition (ZVT) for the main switches but also provides soft switching for the auxiliary switch and diodes. Though all semiconductor devices operate under soft switching, they do not have any additional voltage and current stresses. The proposed converter operates successfully in soft switching operation mode for a wide range of input voltage level and the load. In addition, it has advantages such as fewer structure complications, lower cost and ease of control. In the study, the transition modes for describing the behavior of the proposed converter in one switching period are described. A prototype with 600 W output power, 50 kHz/cell switching frequency, input line voltage of 110-220 V rms and an output voltage of 400 V dc has been implemented. Analysis, design and the control circuitry are also presented in the paper.

The influence of the inverter switching frequency on rotor losses in high-speed permanent magnet machines : an experimental study

NARCIS (Netherlands)

Merdzan, M.; Paulides, J. J H; Borisavljevic, A.; Lomonova, E. A.

2016-01-01

Harmonic content of the output voltage of pulse width modulated voltage source inverters (PWM VSI) is determined by the switching frequency. On the other hand, rotor losses in high-speed permanent magnet (PM) machines are caused, among other factors, by harmonics in stator currents. These harmonics

Reproducible low-voltage resistive switching in a low-initial-resistance Pr0.7Ca0.3MnO3 junction

International Nuclear Information System (INIS)

Li Songlin; Gang Jianlei; Li Jie; Chu Haifeng; Zheng Dongning

2008-01-01

Current-voltage (I-V) characteristics are investigated in a low-initial-resistance Ag/Pr 0.7 Ca 0.3 MnO 3 /Pt sandwich structure. It is found that the junction can show stable low and high resistance states in ±0.3 V voltage sweeping cycles. The set and reset voltage values are, respectively, +0.1 V and -0.2 V, which are very low as compared with those reported previously. Furthermore, the I-V curves in both resistance states exhibit rather linear behaviour, without any signature of metal/insulator interface effects. This implies that the Schottky interface mechanism might not be an indispensable factor for the colossal electroresistance effect. The origin of low switching voltages is attributed to the reduced effective distance for electric field action due to the sufficient oxygen content of the PCMO layer. The underlying physics is discussed in terms of the filament network model together with the field-induced oxygen vacancy motion model

Non-isolated DC-AC converter with high voltage gain for autonomous systems of electric power; Conversor CC-CA nao isolado com alto ganho de tensao para aplicacao em sistemas autonomos de energia eletrica

Energy Technology Data Exchange (ETDEWEB)

Silveira, George Cajazeiras [Centro Federal de Educacao Tecnologica do Ceara (CEFET/CE), Fortaleza, CE (Brazil); Torrico-Bascope, Rene P. [Universidade Federal do Ceara (PPGEE/UFC), Fortaleza, CE (Brazil). Programa de Pos Graduacao em Engenharia Eletrica; Borges Neto, Manuel Rangel [Centro Federal de Educacao Tecnologica de Petrolina (CEFET-PET), PE (Brazil)

2008-07-01

A non-isolated DC-AC converter with high voltage gain with two output sinusoidal voltage - 110 V and 220 V - and frequency 60 Hz for application in autonomous systems of electric power is proposed in this work. This topology consists of a boost converter with high voltage gain, based on three-state switching cell combined with a double half bridge inverter. This configuration type the size and the cost are reduced and the efficiency is gotten better, due to the reduced number of switches. The converters that compose this topology operate with high frequency, reducing the volume of the magnetic materials. can be mention as important characteristics: the voltage stress across the switches of the boost converter are low, due they be naturally clamped by one output filter capacitor, which allows the utilization of switches with lower conduction resistances, and the waveforms of the output voltage of the double half bridge inverter supplies for the load it is sinusoidal and it possesses low harmonic content. (author)

Ultra-long-pulse microwave negative high voltage power supply with fast protection

International Nuclear Information System (INIS)

Xu Weihua; Wu Junshuan; Zheng Guanghua; Huang Qiaolin; Yang Chunsheng; Zhou Yuanwei; Chen Yonghao

1998-01-01

Two 1.4 MW high voltage power supply (HVPS) modules with 3-5 s pulse duration have been developed for LHCD experiment in the HT-7 tokamak. The power source consists of a pulsed generator and the electric circuit. Duration of the ultra-long-pulse is controlled by switching-on dc relay immediately and switching-off ac contactor after a given time, and the fast protection is executed by a crowbar. Due to the soft starting of the power source, the problem of overvoltage induced by dc relay switching-on has been solved. Each power supply module outputs a rated power (-35 kV, 40 A) on the dummy load. With the klystrons connected as the load of the power supply modules, LHCD experiments have been conducted successfully in the HT-7 tokamak

Gallium nitride based transistors for high-efficiency microwave switch-mode amplifiers

Energy Technology Data Exchange (ETDEWEB)

Maroldt, Stephan

2012-07-01

circuit efficiency of >80% were achieved for an operation at 0.45 GHz when adjusting the transistor size for lower operation frequencies. A further decisive improvement of speed and circuit complexity was found by the implementation of enhancement-mode GaN transistors based on a high-transconductance gate-recess technology. Transistors with a threshold voltage of +1 V were demonstrated with a high current drive capability and a maximum transconductance of up to 600 mS/mm. Their reduced input voltage swing tremendously increases the compatibility of digital power amplifier circuits based on GaN and external digital driver and modulator circuits based on silicon technology. Moreover, an innovative development, the series-diode GaN transistor, replaces an off-chip hybrid diode in the class-S amplifier with an integrated solution. It reduces parasitic switching losses and improves the total amplifier properties in terms of operation frequency, efficiency, and circuit complexity. A differential switch-mode core chip featuring series-diode transistors and additional onchip filter elements enabled our partner EADS to realize the first class-S amplifier at 2 GHz worldwide in a module.

IGBT Dynamic Loss Reduction through Device Level Soft Switching

Directory of Open Access Journals (Sweden)

Lan Ma

2018-05-01

Full Text Available Due to its low conduction loss, hence high current ratings, as well as low cost, Silicon Insulated Gate Bipolar Transistor (Si IGBT is widely used in high power applications. However, its switching frequency is generally low because of relatively large switching losses. Silicon carbide Metal-Oxide-Semiconductor Field-Effect Transistor (SiC MOSFET is much more superior due to their fast switching speed, which is determined by the internal parasitic capacitance instead of the stored charges, like the IGBT. By the combination of SiC MOSFET and Si IGBT, this paper presents a novel series hybrid switching method to achieve IGBT’s dynamic switching loss reduction by switching under Zero Voltage Hard Current (ZVHC turn-on and Zero Current Hard Voltage (ZCHV turn-off conditions. Both simulation and experimental results of IGBT are carried out, which shows that the soft switching of IGBT has been achieved both in turn-on and turn-off period. Thus 90% turn-on loss and 57% turn-off loss are reduced. Two different IGBTs’ test results are also provided to study the modulation parameter’s effect on the turn-off switching loss. Furthermore, with the consideration of voltage and current transient states, a new soft switching classification is proposed. At last, another improved modulation and Highly Efficient and Reliable Inverter Concept (HERIC inverter are given to validate the effectiveness of the device level hybrid soft switching method application.

Voltage-Balancing Method for Modular Multilevel Converters Switched at Grid Frequency

DEFF Research Database (Denmark)

Deng, Fujin; Chen, Zhe

2015-01-01

The modular multilevel converter (MMC) becomes attractive for high-voltage and high-power applications due to its high modularity, availability, and power quality. The voltage balance issue of capacitors is very important in the MMC, and the balancing of the capacitor voltage is increasingly...

Switching dynamics of TaOx-based threshold switching devices

Science.gov (United States)

Goodwill, Jonathan M.; Gala, Darshil K.; Bain, James A.; Skowronski, Marek

2018-03-01

Bi-stable volatile switching devices are being used as access devices in solid-state memory arrays and as the active part of compact oscillators. Such structures exhibit two stable states of resistance and switch between them at a critical value of voltage or current. A typical resistance transient under a constant amplitude voltage pulse starts with a slow decrease followed by a rapid drop and leveling off at a low steady state value. This behavior prompted the interpretation of initial delay and fast transition as due to two different processes. Here, we show that the entire transient including incubation time, transition time, and the final resistance values in TaOx-based switching can be explained by one process, namely, Joule heating with the rapid transition due to the thermal runaway. The time, which is required for the device in the conducting state to relax back to the stable high resistance one, is also consistent with the proposed mechanism.

Inductive energy storage using high voltage vacuum circuit breakers

International Nuclear Information System (INIS)

McCann, R.B.; Woodson, H.H.; Mukutmoni, T.

1976-01-01

Controlled thermonuclear fusion experiments currently being planned require large amounts of pulsed energy. Inductive energy storage systems (IES) appear to be attractive for at least two applications in the fusion research program: high beta devices and those employing turbulent heating. The well-known roadblock to successful implementation of IES is the development of a reliable and cost-effective off-switch capable of handling high currents and withstanding high recovery voltages. The University of Texas at Austin has a program to explore the application of conventional vacuum circuit breakers designed for use in AC systems, in conjunction with appropriate counter pulse circuits, as off-switches in inductive energy storage systems. The present paper describes the IES employing vacuum circuit breakers as off-switches. Since the deionization property of these circuit breakers is of great importance to the design and the cost of the counter-pulse circuit, a synthetic test installation to test these breakers has been conceived, designed and is being installed in the Fusion Research Center, University of Texas at Austin. Some design aspects of the facility will be discussed here. Finally, the results of the study on a mathematical model developed and optimized to determine the least cost system which meets both the requirements of an off-switch for IES Systems and the ratings of circuit breakers used in power systems has been discussed. This analysis indicates that the most important factor with respect to the system cost is the derating of the circuit breakers to obtain satisfactory lifetimes

Low voltage arc formation in railguns

Science.gov (United States)

Hawke, R.S.

1985-08-05

A low voltage plasma arc is first established across the rails behind the projectile by switching a low voltage high current source across the rails to establish a plasma arc by vaporizing a fuse mounted on the back of the projectile, maintaining the voltage across the rails below the railgun breakdown voltage to prevent arc formation ahead of the projectile. After the plasma arc has been formed behind the projectile a discriminator switches the full energy bank across the rails to accelerate the projectile. A gas gun injector may be utilized to inject a projectile into the breech of a railgun. The invention permits the use of a gas gun or gun powder injector and an evacuated barrel without the risk of spurious arc formation in front of the projectile.

Parameters Designing of Slide Mode Variable Structure Controller of Bus Voltage of DC Microgrid Based on Proportion Switching Function

Directory of Open Access Journals (Sweden)

Sun Zhenchuan

2017-01-01

Full Text Available Constant value control of the DC-bus voltage is a essential problem of the control system of the DC microgrids. DC-DC converters are applied in parallel to realize the transform of energy from the distributed generations (DGs to the DC-bus. Droop control methods are applied to the DC-bus voltage while PI controllers are used in controlling the duty ratios of the converters. This method may bring out the slow response speed of the system accompanied by the large ripple of the voltage. The slide mode variable structure control can speed up the response and reduce the ripple of the voltage as well. In the traditional slide mode control based on the proportion switching function, the denominator of the transfer function of the controlled plant is a second-order characteristic polynomial without the constant term. The denominators of the transfer functions of the buck DC-DC converters contain the constant terms. The designing of the parameters of the slide mode control based on the proportion switching function is analyzed based on mathematics deductions. Simulation results show that the selected parameters can not only speed up the response of the system but also greatly reduce the ripple of the voltage.

DESAIN DAN IMPLEMENTSI SOFT SWITCHING BOOST KONVERTER DENGAN SIMPLE AUXILLARY RESONANT SWITCH (SARC

Directory of Open Access Journals (Sweden)

Dimas Bagus Saputra

2017-01-01

Full Text Available Boost konverter merupakan penaik tegangan DC ke tegangan DC yang mempunyai tegangan output yang lebih tinggi dibanding inputnya. Penggunaan boost konverter diera modern semakin meningkat dan dibuat dengan dimensi yang lebih kecil, berat yang lebih ringan dan efisiensi yang lebih tinggi dibanding dengan boost konverter generasi terdahulu. Tetapi rugi-rugi periodik saat on/off meningkat. Untuk meraih kriteria tersebut, teknik hard switching boost konverter berevolusi menjadi teknik soft switching dengan menambah rangkaian simple auxiliary resonant circuit (SARC. Karena penambahan rangkaian SARC tersebut konverter bekerja pada kondisi zero-voltage switching switch (ZVS dan zero current switch (ZCS, sehingga saklar semikonduktor tidak bekerja secara hard switching lagi. Pada penelitian ini akan di desain dan diimplementaskan soft switching boost konverter dengan SARC. Kelebihan dari soft switching boost konverter dengan SARC adalah mempunyai efisiensi yang lebih tinggi dibanding dengan boost konverter konventional. Dari hasil implementasi menunjukkan konverter yang diajukan telah meraih zero voltage switch (ZVS. Sehingga boost konverter zero voltage switch (ZVS bisa diaplikasikan pada sistem power suplay yang membutuhkan efisiensi energi yang tinggi terutama pada daya yang tinggi.

Laser-produced dense plasma in extremely high pressure gas and its application to a plasma-bridged gap switch

International Nuclear Information System (INIS)

Yamada, J.; Okuda, A.

1989-01-01

When an extremely high pressure gas is irradiated by an intense laser light, a dense plasma produced at the focal spot moves towards the focusing lens with a high velocity. Making use of this phenomenon, a new plasma-bridged gap switch is proposed and its switching characteristics is experimentally examined. From the experiments, it is confirmed that the switching time is almost constant with the applied voltage only when the focal spot is just on the positive electrode, indicating that the bridging of gap is caused by the laser light. (author)

Switching speed limitations of high power IGBT modules

DEFF Research Database (Denmark)

Incau, Bogdan Ioan; Trintis, Ionut; Munk-Nielsen, Stig

2015-01-01

for the blocking dc-link voltage. Switching losses are analyzed upon a considerable variation of resistor value from turn-on gate driver side. Short circuit operations are investigated along with safe operating area for entire module to validate electrical capabilities under extreme conditions....

New series half-bridge converters with the balance input split capacitor voltages

Science.gov (United States)

Lin, Bor-Ren; Chiang, Huann-Keng; Wang, Shang-Lun

2016-03-01

This article presents a new dc/dc converter to perform the main functions of zero voltage switching (ZWS), low converter size, high switching frequency and low-voltage stress. Metal-oxide-semiconductor field-effect transistors (MOSFETs) with high switching frequency are used to reduce the converter size and increase circuit efficiency. To overcome low-voltage stress and high turn-on resistance of MOSFETs, the series half-bridge topology is adopted in the proposed converter. Hence, the low-voltage stress MOSFETs can be used for medium-input voltage applications. The asymmetric pulse-width modulation is used to generate the gating signals and achieve the ZWS. On the secondary side, the parallel connection of two diode rectifiers is adopted to reduce the current rating of passive components. On the primary side, the series connection of two transformers is used to balance two output inductor currents. Two flying capacitors are used to automatically balance the input split capacitor voltages. Finally, experiments with 1000 W rated power are performed to verify the theoretical analysis and the effectiveness of proposed converter.

Module Integrated GaN Power Stage for High Switching Frequency Operation

DEFF Research Database (Denmark)

Nour, Yasser; Knott, Arnold

2017-01-01

is integrated on a high glass transition temperature 0.4 mmthick FR4 substrate configured as a 70 pin ball grid arraypackage. The power stage is tested up to switching frequency of12 MHz. The power stage achieved 88.5 % peak efficiency whenconfigured as a soft switching buck converter operating at 7MHz......An increased attention has been detected todevelop smaller and lighter high voltage power converters in therange of 50 V to 400 V domains. The applications for theseconverters are mainly focused for Power over Ethernet (PoE),LED lighting and ac adapters. Design for high power density isone...... of the targets for next generation power converters. Thispaper presents an 80 V input capable multi-chip moduleintegration of enhancement mode gallium nitride (GaN) fieldeffect transistors (FETs) based power stage. The module design ispresented and validated through experimental results. The powerstage...

High-power electro-optic switch technology based on novel transparent ceramic

International Nuclear Information System (INIS)

Zhang Xue-Jiao; Ye Qing; Qu Rong-Hui; Cai Hai-wen

2016-01-01

A novel high-power polarization-independent electro-optic switch technology based on a reciprocal structure Sagnac interferometer and a transparent quadratic electro-optic ceramic is proposed and analyzed theoretically and experimentally. The electro-optic ceramic is used as a phase retarder for the clockwise and counter-clockwise polarized light, and their polarization directions are adjusted to their orthogonal positions by using two half-wave plates. The output light then becomes polarization-independent with respect to the polarization direction of the input light. The switch characteristics, including splitter ratios and polarization states, are theoretically analyzed and simulated in detail by the matrix multiplication method. An experimental setup is built to verify the analysis and experimental results. A new component ceramic is used and a non-polarizing cube beam splitter (NPBS) replaces the beam splitter (BS) to lower the ON/OFF voltage to 305 V and improve the extinction ratio by 2 dB. Finally, the laser-induced damage threshold for the proposed switch is measured and discussed. It is believed that potential applications of this novel polarization-independent electro-optic switch technology will be wide, especially for ultrafast high-power laser systems. (paper)

Pulsed power opening switch research at the University of New Mexico

International Nuclear Information System (INIS)

Humphries, S. Jr.

1987-01-01

Opening switch research at the University of New Mexico (UNM) is directed toward moderate-current (--10 kA) devices with potential applications to high-power charged particle accelerators. Two devices with the capacity for controlling gigawatt high-voltage circuits, the grid-controlled plasma flow switch and the scanned-beam switch, are under investigation. Both switches are conceptually simple; they involve little collective physics and are within the capabilities of current technology. In the plasma flow switch, the flux of electrons into a high-voltage power gap is controlled by a low-voltage control grid. Plasma generation is external to, and independent of, the power circuit. In the closed phase, plasma fills the gap so that the switch has a low on-state impedance. Pulse repetition rates in the megahertz range should be feasible. In single-shot proof-of-principle experiments, a small area switch modulated a 3-MW circuit; a 20-ns opening time was observed. The scanned-beam switch will utilize electric field deflection to direct the power of a sheet electron beam. The beam is to be alternately scanned to two inverse diodes connected to output transmission lines. The switch is expected to generate continuous-wave pulse trains for applications such as high-frequency induction linacs. Theoretical studies indicate that 10-GW devices in the 100-MHz range with 70-percent efficiency should be technologically feasible

A Novel Soft-Switching Synchronous Buck Converter for Portable Applications

Directory of Open Access Journals (Sweden)

Anup Kumar Panda

2008-01-01

Full Text Available This paper proposes a zero-voltage-transition (ZVT pulse-width-modulated (PWM synchronous buck converter, which is designed to operate at low voltage and high efficiency typically required for portable systems. A new passive auxiliary circuit that allows the main switch to operate with zero-voltage switching has been incorporated in the conventional PWM synchronous buck converter. The operation principles and a detailed steady-state analysis of the ZVT-PWM synchronous converter implemented with the auxiliary circuit are presented. Besides, the main switch and all of the semiconductor devices operate under soft-switching conditions. Thus, the auxiliary circuit provides a larger overall efficiency. The feasibility of the auxiliary circuit is confirmed by simulation and experimental results.

High voltage test techniques

CERN Document Server

Kind, Dieter

2001-01-01

The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

Digital Control of a High Voltage (2.5 kV) Bidirectional Flyback DC-DC Converter for Driving a Capacitive Incremental Actuator

DEFF Research Database (Denmark)

Thummala, Prasanth; Maksimovic, Dragan; Zhang, Zhe

2016-01-01

This paper presents a digital control technique to achieve valley switching in a bidirectional flyback converter used to drive a dielectric electro-active polymer based capacitive incremental actuator. The paper also provides the design of a low input voltage (24 V) and variable high output voltage...... on the output high-voltage (HV) side. Experimental results verifying the bidirectional operation of a high voltage flyback converter are presented, using a 3 kV polypropylene film capacitor as the load. The energy loss distributions of the converter when 4 kV and 4.5 kV HV MOSFETs are used on HV side...

A high-efficiency low-voltage CMOS rectifier for harvesting energy in implantable devices.

Science.gov (United States)

Hashemi, S Saeid; Sawan, Mohamad; Savaria, Yvon

2012-08-01

We present, in this paper, a new full-wave CMOS rectifier dedicated for wirelessly-powered low-voltage biomedical implants. It uses bootstrapped capacitors to reduce the effective threshold voltage of selected MOS switches. It achieves a significant increase in its overall power efficiency and low voltage-drop. Therefore, the rectifier is good for applications with low-voltage power supplies and large load current. The rectifier topology does not require complex circuit design. The highest voltages available in the circuit are used to drive the gates of selected transistors in order to reduce leakage current and to lower their channel on-resistance, while having high transconductance. The proposed rectifier was fabricated using the standard TSMC 0.18 μm CMOS process. When connected to a sinusoidal source of 3.3 V peak amplitude, it allows improving the overall power efficiency by 11% compared to the best recently published results given by a gate cross-coupled-based structure.

High-voltage many-pulses generator with inductive energy store and fuse

International Nuclear Information System (INIS)

Kovalev, V.P.; Diyankov, V.S.; Kormilitsin, A.I.; Lavrent'ev, B.N.

1996-01-01

The high-voltage generator with inductive energy store and fuses as opening switch that generate series of powerful pulses is considered. This generator differs from the ordinary generator with inductive store by the cross-section of the series copper wires. The parameters of the wires are chosen based on empirical relations. The generation principle was tested on the two high-voltage generators with characteristic impedance 2.2 ohm, 4 ohm and with output voltages of 140 kV and 420 kV, respectively. Copper wires 0.1 to 0.23 mm in diameter were used. Series of 2 to 5 pulses of 100 to 300 ns duration, 400 to 1000 kV amplitude and 1 - 10 GW power were obtained. Pulses can be both the same and different. Two successive bremsstrahlung radiation pulses were obtain on the EMIR-M and IGUR-3 devices. Series power megavolt pulses can be generated with a power exceeding 10 11 W, pulse duration of 10 -3 to 10 -6 s, and time interval between them 10 -7 to 10 -5 s. (author). 4 figs., 2 refs

The development of long pulse high voltage power supply for MNI-1U neutral beam injector

International Nuclear Information System (INIS)

Detai Wang

1989-01-01

A high power long pulse high voltage power supply (HVPS) for MNI- 1 U neutral beam injector (NBI) is described. This HVPS is used as a switching regulator with a duty cycle of 1/100, the specifications of circuit are as follows, output pulse voltage 50kv, pulse current 30A, pulse width 50ms, rise-time and fall-time of the voltage are less than 25 μs, stability of the pulse flat is better than 0.5%, regulation response time of the pulse voltage less than 30 μs can be attained. It is also used as a stable DC HVPS, output voltage is 1 to 100kv, current is 1 to 5A. If regulation tube is shunted with high power resistor in parallel, the current can be extended to 10 A, stability of the output voltage or current is better than 0.1%. Now, the HVPS has been put into operation for MNI- 1 U NBI and PIG ion source made in French. 3 refs., 5 figs

Bidirectional Flyback Converter with Multiple Series Connected Outputs for High Voltage Capacitive Charge and Discharge Applications

DEFF Research Database (Denmark)

Thummala, Prasanth; Schneider, Henrik; Zhang, Zhe

2015-01-01

is limited by the parasitics of the high voltage active components, which also prevent full utilization of valley switching during discharge process. A second implementation is therefore proposed, where the secondary of flyback transformer winding is split into multiple windings which are connected in series...

Plasma opening switch with extrinsic magnetic field

CERN Document Server

Dolgachev, G; Maslennikov, D

2001-01-01

Summary form only given, as follows. We have demonstrated in series of experiments that plasma opening switch (POS) switching voltage (UPOS) is defined by energy density (w) deposited in the POS plasma. If we then consider a plasma erosion mainly responsible for the effect of POS switching (the erosion effect could be described by Hall or Child-Langmuir models) the energy density (w) could be measured as a function of a system "macro-parameter" such as the initial charging voltage of the capacity storage system (the Marx pulsed voltage generator) UMarx. The POS voltage in this case could be given by UPOS"aw=aUMarx4/7, where a is a constant. This report demonstrates that for the high-impedance POS which has limited charge density transferred through the POS plasma a"2.5 (MV3/7) with no external magnetic field applied. The use of the extrinsic magnetic field allows to increase a up to 3.6 (MV3/7) and to achieve higher voltages at the opening phase - UPOS=3.6UMarx4/7. To verify this approach set of experimental ...

Disintegration of rocks based on magnetically isolated high voltage discharge

Science.gov (United States)

He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

2013-02-01

Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper.

Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

Science.gov (United States)

Li, Jian; Huang, Rongjin; Li, Xu; Xu, Dong; Liu, Huiming; Li, Laifeng

2017-09-01

Impregnating resins as electrical insulation materials for use in ITER magnets and feeder system are required to be radiation stable, good mechanical performance and high voltage electrical breakdown strength. In present ITER project, the breakdown strength need over 30 kV/mm, for future DEMO reactor, it will be greater than this value. In order to develop good property insulation materials to satisfy the requirements of future fusion reactor, high voltage breakdown strength measurement system at low temperature is necessary. In this paper, we will introduce our work on the design of this system. This measuring system has two parts: one is an electrical supply system which provides the high voltage from a high voltage power between two electrodes; the other is a cooling system which consists of a G-M cryocooler, a superfluid chamber and a heat switch. The two stage G-M cryocooler pre-cool down the system to 4K, the superfluid helium pot is used for a container to depress the helium to superfluid helium which cool down the sample to 1.8K and a mechanical heat switch connect or disconnect the cryocooler and the pot. In order to provide the sufficient time for the test, the cooling system is designed to keep the sample at 1.8K for 300 seconds.

GaN transistors on Si for switching and high-frequency applications

Science.gov (United States)

Ueda, Tetsuzo; Ishida, Masahiro; Tanaka, Tsuyoshi; Ueda, Daisuke

2014-10-01

In this paper, recent advances of GaN transistors on Si for switching and high-frequency applications are reviewed. Novel epitaxial structures including superlattice interlayers grown by metal organic chemical vapor deposition (MOCVD) relieve the strain and eliminate the cracks in the GaN over large-diameter Si substrates up to 8 in. As a new device structure for high-power switching application, Gate Injection Transistors (GITs) with a p-AlGaN gate over an AlGaN/GaN heterostructure successfully achieve normally-off operations maintaining high drain currents and low on-state resistances. Note that the GITs on Si are free from current collapse up to 600 V, by which the drain current would be markedly reduced after the application of high drain voltages. Highly efficient operations of an inverter and DC-DC converters are presented as promising applications of GITs for power switching. The high efficiencies in an inverter, a resonant LLC converter, and a point-of-load (POL) converter demonstrate the superior potential of the GaN transistors on Si. As for high-frequency transistors, AlGaN/GaN heterojuction field-effect transistors (HFETs) on Si designed specifically for microwave and millimeter-wave frequencies demonstrate a sufficiently high output power at these frequencies. Output powers of 203 W at 2.5 GHz and 10.7 W at 26.5 GHz are achieved by the fabricated GaN transistors. These devices for switching and high-frequency applications are very promising as future energy-efficient electronics because of their inherent low fabrication cost and superior device performance.

New Switched-Dual-Source Multilevel Inverter for Symmetrical and Asymmetrical Operation

Directory of Open Access Journals (Sweden)

Kennedy Adinbo Aganah

2018-04-01

Full Text Available The increasing integration of large solar PV and wind farms into the power grid has fueled, over the past two decades, growing demands for high-power, high-voltage, utility-scale inverters. Multilevel inverters have emerged as the industry’s choice for megawatt-range inverters because of their reduced voltage stress, capability for generating an almost-sinusoidal voltage, built-in redundancy and other benefits. This paper presents a novel switched-source multilevel inverter (SS MLI architecture. This new inverter shows superior capabilities when compared to existing topologies. It has reduced voltage stress on the semiconductor, uses fewer switches (i.e., reduced size/weight/cost and exhibits increased efficiency. The proposed SS MLI is comprised of two voltage sources ( V 1 , V 2 and six switches. It is capable of generating five-level output voltage in symmetric mode (i.e., V 1 = V 2 and seven-level output voltage in asymmetric mode (i.e., V 1 ≠ V 2 . We present simulations results (using MATLAB®/Simulink® for five- and seven-level output voltages, and they strongly support the validity of the proposed inverter. These positive results are further supported experimentally using a laboratory prototype.

Soft switching PWM isolated boost converter for fuel cell application

Energy Technology Data Exchange (ETDEWEB)

Rezaei, M.; Adib, E. [Isfahan Univ. of Technology, Isfahan (Iran, Islamic Republic of)

2009-07-01

This presentation introduced a newly developed soft switching, isolated boost type converter for fuel cell applications. With a simple PWM control circuit, the converter achieves zero voltage switching the main switch. Since the auxiliary circuit is soft switched, the converter can operate at high powers which make it suitable for fuel cell applications. In particular, the converter is suitable for the interface of fuel cell and inverters because of its high voltage gain and isolation between input and output sources. In addition, the input current of the converter (current drained from the fuel cell) is almost constant since it is a boost type converter. The converter was analyzed and the simulation results validate the theoretical analysis.

Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

Directory of Open Access Journals (Sweden)

Perić Dragoslav M.

2015-01-01

Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

Specific features of the switch-on gate current and different switch-on modes in silicon carbide thyristors

International Nuclear Information System (INIS)

Yurkov, S N; Mnatsakanov, T T; Levinshtein, M E; Cheng, L; Palmour, J W

2014-01-01

The specific features of the temperature and bias dependences of the switch-on gate current in SiC thyristors are examined analytically for two possible switching mechanisms. The so-called γ-mechanism, which is highly typical of the conventional Si thyristors, is characterized by very weak temperature and bias dependences. By contrast, the so-called α-mechanism, which is very characteristic of SiC thyristors, is highly sensitive to changes in temperature and bias. If the thyristor is switched on by the α-mechanism, the switch-on gate current density decreases very steeply with increasing temperature. As a result, the thyristor can lose its working capacity at elevated temperatures due to the instability against even very weak impacts. With decreasing the bias voltage U a , the gate switch-on current increases very steeply, which can make switching the thyristor on difficult. The unintentional shunting, which is apparently present in high-voltage SiC thyristors, causes the transition from the α- to the γ-mechanism at elevated temperatures and high biases. It can be supposed that introduction of a controllable technological shunting of the emitter–thin base junction allows stabilization of the temperature and bias parameters of SiC thyristors. The analytical results are confirmed by computer simulations performed in wide temperature and bias ranges for a 4H-SiC thyristor of the 18 kV class. (paper)

Isolated and soft-switched power converter

Science.gov (United States)

Peng, Fang Zheng; Adams, Donald Joe

2002-01-01

An isolated and soft-switched power converter is used for DC/DC and DC/DC/AC power conversion. The power converter includes two resonant tank circuits coupled back-to-back through an isolation transformer. Each resonant tank circuit includes a pair of resonant capacitors connected in series as a resonant leg, a pair of tank capacitors connected in series as a tank leg, and a pair of switching devices with anti-parallel clamping diodes coupled in series as resonant switches and clamping devices for the resonant leg. The power converter is well suited for DC/DC and DC/DC/AC power conversion applications in which high-voltage isolation, DC to DC voltage boost, bidirectional power flow, and a minimal number of conventional switching components are important design objectives. For example, the power converter is especially well suited to electric vehicle applications and load-side electric generation and storage systems, and other applications in which these objectives are important. The power converter may be used for many different applications, including electric vehicles, hybrid combustion/electric vehicles, fuel-cell powered vehicles with low-voltage starting, remote power sources utilizing low-voltage DC power sources, such as photovoltaics and others, electric power backup systems, and load-side electric storage and generation systems.

The theory and implementation of a high quality pulse width modulated waveform synthesiser applicable to voltage FED inverters

Science.gov (United States)

Lower, Kim Nigel

1985-03-01

Modulation processes associated with the digital implementation of pulse width modulation (PWM) switching strategies were examined. A software package based on a portable turnkey structure is presented. Waveform synthesizer implementation techniques are reviewed. A three phase PWM waveform synthesizer for voltage fed inverters was realized. It is based on a constant carrier frequency of 18 kHz and a regular sample, single edge, asynchronous PWM switching scheme. With high carrier frequencies, it is possible to utilize simple switching strategies and as a consequence, many advantages are highlighted, emphasizing the importance to industrial and office markets.

Modeling and analysis of the Rimfire gas switch

International Nuclear Information System (INIS)

Gahl, John M.; Kemp, Mark A.; Struve, Kenneth William; Curry, Randy D.; McDonald, Ken F.

2005-01-01

Many accelerators at Sandia National Laboratories utilize the Rimfire gas switch for high-voltage, high-power switching. Future accelerators will have increased performance requirements for switching elements. When designing improved versions of the Rimfire switch, there is a need for quick and accurate simulation of the electrical effects of geometry changes. This paper presents an advanced circuit model of the Rimfire switch that can be used for these simulations. The development of the model is shown along with comparisons to past models and experimental results.

High Voltage Gain Dual Active Bridge Converter with an Extended Operation Range for Renewable Energy Systems

DEFF Research Database (Denmark)

Zhang, Zhe; Tomas Manez, Kevin; Yudi, Xiao

2018-01-01

Bridge (P2DAB) converter, i.e. low-voltage (LV) side parallel and high-voltage (HV) side series, is proposed to achieve high voltage gain and low current stress over switching devices and transformer windings. Given the unmodified P2DAB power stage, by regulating the phase-shift angle between......Developing bidirectional dc-dc converters has become a critical research topic and gains more and more attention in recent years due to the extensive applications of smart grids with energy storages, hybrid and electrical vehicles and dc microgrids. In this paper, a Partial Parallel Dual Active...... the paralleled active bridges, the power equations and voltage gain are then modified, and therefore the operation range can be extended effectively. The operating principles of the proposed converter and its power characteristics under various operation modes are studied, and the design constraints...

Voltage regulator for generator

Energy Technology Data Exchange (ETDEWEB)

Naoi, K

1989-01-17

It is an object of this invention to provide a voltage regulator for a generator charging a battery, wherein even if the ambient temperature at the voltage regulator rises abnormally high, possible thermal breakage of the semiconductor elements constituting the voltage regulator can be avoided. A feature of this invention is that the semiconductor elements can be protected from thermal breakage, even at an abnormal ambient temperature rise at the voltage regulator for the battery charging generator, by controlling a maximum conduction ratio of a power transistor in the voltage regulator in accordance with the temperature at the voltage regulator. This is achieved through a switching device connected in series to the field coil of the generator and adapted to be controlled in accordance with an output voltage of the generator and the ambient temperature at the voltage regulator. 6 figs.

Design and Optimization of AlN based RF MEMS Switches

Science.gov (United States)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

Characteristics of trap-filled gallium arsenide photoconductive switches used in high gain pulsed power applications

International Nuclear Information System (INIS)

ISLAM, N.E.; SCHAMILOGLU, E.; MAR, ALAN; LOUBRIEL, GUILLERMO M.; ZUTAVERN, FRED J.; JOSHI, R.P.

2000-01-01

The electrical properties of semi-insulating (SI) Gallium Arsenide (GaAs) have been investigated for some time, particularly for its application as a substrate in microelectronics. Of late this material has found a variety of applications other than as an isolation region between devices, or the substrate of an active device. High resistivity SI GaAs is increasingly being used in charged particle detectors and photoconductive semiconductor switches (PCSS). PCSS made from these materials operating in both the linear and non-linear modes have applications such as firing sets, as drivers for lasers, and in high impedance, low current Q-switches or Pockels cells. In the non-linear mode, it has also been used in a system to generate Ultra-Wideband (UWB) High Power Microwaves (HPM). The choice of GaAs over silicon offers the advantage that its material properties allow for fast, repetitive switching action. Furthermore photoconductive switches have advantages over conventional switches such as improved jitter, better impedance matching, compact size, and in some cases, lower laser energy requirement for switching action. The rise time of the PCSS is an important parameter that affects the maximum energy transferred to the load and it depends, in addition to other parameters, on the bias or the average field across the switch. High field operation has been an important goal in PCSS research. Due to surface flashover or premature material breakdown at higher voltages, most PCSS, especially those used in high power operation, need to operate well below the inherent breakdown voltage of the material. The lifetime or the total number of switching operations before breakdown, is another important switch parameter that needs to be considered for operation at high bias conditions. A lifetime of ∼ 10 4 shots has been reported for PCSS's used in UWB-HPM generation [5], while it has exceeded 10 8 shots for electro-optic drivers. Much effort is currently being channeled in the

Constant Switching Frequency Self-Oscillating Controlled Class-D Amplifiers

OpenAIRE

Nguyen-Duy, Khiem; Knott, Arnold; Andersen, Michael A. E.

2014-01-01

The self-oscillating control approach has been used extensively in class-D amplifiers. It has several advantages such as high bandwidth and high audio performance. However, one of the primary disadvantages in a self-oscillating controlled system is that the switching frequency of the amplifier varies with the ratio of the output voltage to the input rail voltage. In other words, the switching frequency varies with the duty cycle of the output. The drop in the frequency results in lower contro...

Large Area Silicon Carbide Vertical JFETs for 1200 V Cascode Switch Operation

Directory of Open Access Journals (Sweden)

Victor Veliadis

2008-01-01

Full Text Available SiC VJFETs are excellent candidates for reliable high-power/temperature switching as they only use pn junctions in the active device area where the high-electric fields occur. VJFETs do not suffer from forward voltage degradation, exhibit excellent short-circuit performance, and operate at 300°C. 0.19 cm2 1200 V normally-on and 0.15 cm2 low-voltage normally-off VJFETs were fabricated. The 1200-V VJFET outputs 53 A with a forward drain voltage drop of 2 V and a specific onstate resistance of 5.4 mΩ cm2. The low-voltage VJFET outputs 28 A with a forward drain voltage drop of 3.3 V and a specific onstate resistance of 15 mΩ cm2. The 1200-V SiC VJFET was connected in the cascode configuration with two Si MOSFETs and with a low-voltage SiC VJFET to form normally-off power switches. At a forward drain voltage drop of 2.2 V, the SiC/MOSFETs cascode switch outputs 33 A. The all-SiC cascode switch outputs 24 A at a voltage drop of 4.7 V.

High-power electro-optic switch technology based on novel transparent ceramic

Science.gov (United States)

Xue-Jiao, Zhang; Qing, Ye; Rong-Hui, Qu; Hai-wen, Cai

2016-03-01

A novel high-power polarization-independent electro-optic switch technology based on a reciprocal structure Sagnac interferometer and a transparent quadratic electro-optic ceramic is proposed and analyzed theoretically and experimentally. The electro-optic ceramic is used as a phase retarder for the clockwise and counter-clockwise polarized light, and their polarization directions are adjusted to their orthogonal positions by using two half-wave plates. The output light then becomes polarization-independent with respect to the polarization direction of the input light. The switch characteristics, including splitter ratios and polarization states, are theoretically analyzed and simulated in detail by the matrix multiplication method. An experimental setup is built to verify the analysis and experimental results. A new component ceramic is used and a non-polarizing cube beam splitter (NPBS) replaces the beam splitter (BS) to lower the ON/OFF voltage to 305 V and improve the extinction ratio by 2 dB. Finally, the laser-induced damage threshold for the proposed switch is measured and discussed. It is believed that potential applications of this novel polarization-independent electro-optic switch technology will be wide, especially for ultrafast high-power laser systems. Project supported by the National Natural Science Foundation of China (Grant Nos. 61137004, 61405218, and 61535014).

The physics of photoconductive spark gap switching : pushing the frontiers

NARCIS (Netherlands)

Hendriks, J.

2006-01-01

Photoconductive switching of an atmospheric, air-¯lled spark gap by a high-power fem- tosecond laser is a novel approach for switching high voltages into pulses with a very fast rise time (order ps) and almost no shot-to-shot time variation (jitter). Such a switch makes it possible to synchronize

Device for monitoring cell voltage

Science.gov (United States)

Doepke, Matthias [Garbsen, DE; Eisermann, Henning [Edermissen, DE

2012-08-21

A device for monitoring a rechargeable battery having a number of electrically connected cells includes at least one current interruption switch for interrupting current flowing through at least one associated cell and a plurality of monitoring units for detecting cell voltage. Each monitoring unit is associated with a single cell and includes a reference voltage unit for producing a defined reference threshold voltage and a voltage comparison unit for comparing the reference threshold voltage with a partial cell voltage of the associated cell. The reference voltage unit is electrically supplied from the cell voltage of the associated cell. The voltage comparison unit is coupled to the at least one current interruption switch for interrupting the current of at least the current flowing through the associated cell, with a defined minimum difference between the reference threshold voltage and the partial cell voltage.

Energy storage, compression, and switching. Vol. 2

International Nuclear Information System (INIS)

Nardi, V.; Bostick, W.H.; Sahlin, H.

1983-01-01

This book is a compilation of papers presented at the Second International Conference on Energy Storage, Compression, and Switching, which was held in order to assemble active researchers with a major interest in plasma physics, electron beams, electric and magnetic energy storage systems, high voltage and high current switches, free-electron lasers, and pellet implosion plasma focus. Topics covered include: Slow systems: 50-60 Hz machinery, homopolar generators, slow capacitors, inductors, and solid state switches; Intermediate systems: fast capacitor banks; superconducting storage and switching; gas, vacuum, and dielectric switching; nonlinear (magnetic) switching; imploding liners capacitors; explosive generators; and fuses; and Fast systems: Marx, Blumlein, oil, water, and pressurized water dielectrics; switches; magnetic insulation; electron beams; and plasmas

Know-How on design of switching regulator

International Nuclear Information System (INIS)

1985-08-01

This book introduces switching regulator from base to application, which deals with fundamentals of switching regulator such as the reason of boom about switching regulator, understanding simple circuit without electric transformer and decision of circuit type with input voltage and output voltage, configuration and characteristic of switching regulator, a concrete design of switching regulator, pulse width control circuit and protection circuit, concrete circuit examples of switching power and the point of switching regulator.

Highly uniform bipolar resistive switching characteristics in TiO2/BaTiO3/TiO2 multilayer

International Nuclear Information System (INIS)

Ma, W. J.; Zhang, X. Y.; Wang, Ying; Zheng, Yue; Lin, S. P.; Luo, J. M.; Wang, B.; Li, Z. X.

2013-01-01

Nanoscale multilayer structure TiO 2 /BaTiO 3 /TiO 2 has been fabricated on Pt/Ti/SiO 2 /Si substrate by chemical solution deposition method. Highly uniform bipolar resistive switching (BRS) characteristics have been observed in Pt/TiO 2 /BaTiO 3 /TiO 2 /Pt cells. Analysis of the current-voltage relationship demonstrates that the space-charge-limited current conduction controlled by the localized oxygen vacancies should be important to the resistive switching behavior. X-ray photoelectron spectroscopy results indicated that oxygen vacancies in TiO 2 play a crucial role in the resistive switching phenomenon and the introduced TiO 2 /BaTiO 3 interfaces result in the high uniformity of bipolar resistive switching characteristics

High-voltage many-pulses generator with inductive energy store and fuse

Energy Technology Data Exchange (ETDEWEB)

Kovalev, V P; Diyankov, V S; Kormilitsin, A I; Lavrent` ev, B N [All-Russian Research Inst. of Technical Physics, Snezhinsk (Russian Federation)

1997-12-31

The high-voltage generator with inductive energy store and fuses as opening switch that generate series of powerful pulses is considered. This generator differs from the ordinary generator with inductive store by the cross-section of the series copper wires. The parameters of the wires are chosen based on empirical relations. The generation principle was tested on the two high-voltage generators with characteristic impedance 2.2 ohm, 4 ohm and with output voltages of 140 kV and 420 kV, respectively. Copper wires 0.1 to 0.23 mm in diameter were used. Series of 2 to 5 pulses of 100 to 300 ns duration, 400 to 1000 kV amplitude and 1 - 10 GW power were obtained. Pulses can be both the same and different. Two successive bremsstrahlung radiation pulses were obtain on the EMIR-M and IGUR-3 devices. Series power megavolt pulses can be generated with a power exceeding 10{sup 11} W, pulse duration of 10{sup -3} to 10{sup -6} s, and time interval between them 10{sup -7} to 10{sup -5} s. (author). 4 figs., 2 refs.

A high-voltage equipment (high voltage supply, high voltage pulse generators, resonant charging inductance, synchro-instruments for gyrotron frequency measurements) for plasma applications

International Nuclear Information System (INIS)

Spassov, Velin

1996-01-01

This document reports my activities as visitor-professor at the Gyrotron Project - INPE Plasma Laboratory. The main objective of my activities was designing, construction and testing a suitable high-voltage pulse generator for plasma applications, and efforts were concentrated on the following points: Design of high-voltage resonant power supply with tunable output (0 - 50 kV) for line-type high voltage pulse generator; design of line-type pulse generator (4 microseconds pulse duration, 0 - 25 kV tunable voltage) for non linear loads such as a gyrotron and P III reactor; design of resonant charging inductance for resonant line-type pulse generator, and design of high resolution synchro instrument for gyrotron frequency measurement. (author)

Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

KAUST Repository

Mayet, Abdulilah M.; Hussain, Aftab M.; Hussain, Muhammad Mustafa

2015-01-01

© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young's modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

Three-terminal nanoelectromechanical switch based on tungsten nitride—an amorphous metallic material

KAUST Repository

Mayet, Abdulilah M.

2015-12-04

© 2016 IOP Publishing Ltd. Nanoelectromechanical (NEM) switches inherently have zero off-state leakage current and nearly ideal sub-threshold swing due to their mechanical nature of operation, in contrast to semiconductor switches. A challenge for NEM switches to be practical for low-power digital logic application is their relatively large operation voltage which can result in higher dynamic power consumption. Herein we report a three-terminal laterally actuated NEM switch fabricated with an amorphous metallic material: tungsten nitride (WNx). As-deposited WNx thin films have high Young\\'s modulus (300 GPa) and reasonably high hardness (3 GPa), which are advantageous for high wear resistance. The first prototype WNx switches are demonstrated to operate with relatively low control voltage, down to 0.8 V for an air gap thickness of 150 nm.

Compact, Energy-Efficient High-Frequency Switched Capacitor Neural Stimulator With Active Charge Balancing.

Science.gov (United States)

Hsu, Wen-Yang; Schmid, Alexandre

2017-08-01

Safety and energy efficiency are two major concerns for implantable neural stimulators. This paper presents a novel high-frequency, switched capacitor (HFSC) stimulation and active charge balancing scheme, which achieves high energy efficiency and well-controlled stimulation charge in the presence of large electrode impedance variations. Furthermore, the HFSC can be implemented in a compact size without any external component to simultaneously enable multichannel stimulation by deploying multiple stimulators. The theoretical analysis shows significant benefits over the constant-current and voltage-mode stimulation methods. The proposed solution was fabricated using a 0.18 μm high-voltage technology, and occupies only 0.035 mm 2 for a single stimulator. The measurement result shows 50% peak energy efficiency and confirms the effectiveness of active charge balancing to prevent the electrode dissolution.

Grid Filter Design for a Multi-Megawatt Medium-Voltage Voltage Source Inverter

DEFF Research Database (Denmark)

Rockhill, A.A.; Liserre, Marco; Teodorescu, Remus

2011-01-01

This paper describes the design procedure and performance of an LCL grid filter for a medium-voltage neutral point clamped (NPC) converter to be adopted for a multimegawatt wind turbine. The unique filter design challenges in this application are driven by a combination of the medium voltage...... converter, a limited allowable switching frequency, component physical size and weight concerns, and the stringent limits for allowable injected current harmonics. Traditional design procedures of grid filters for lower power and higher switching frequency converters are not valid for a multi......-megawatt filter connecting a medium-voltage converter switching at low frequency to the electric grid. This paper demonstrates a frequency domain model based approach to determine the optimum filter parameters that provide the necessary performance under all operating conditions given the necessary design...

Circuitry for monitoring a high direct current voltage supply for an ionization chamber

International Nuclear Information System (INIS)

1981-01-01

An arrangement to measure the voltage of the supply and a switching means controlled by this is described. The voltage measurer consists of first and second signal coupling means, the input of the second (connected to the voltage supply) is connected in series with the output of the first. An ionization chamber with this circuitry may be used to monitor the radiation output of a particle accelerator more accurately. Faulty measurements of the dose output, caused by voltages in the earth circuit, are avoided. (U.K.)

Design of the all solid high-voltage power supply for a gyrotron body

Energy Technology Data Exchange (ETDEWEB)

Rao, Yihua [School of Mathematics and Physics, University of South China, Hengyang, 421001 (China); Chen, Wenguang, E-mail: 430000485393@usc.edu.cn [School of Electrical Engineering, University of South China, Hengyang, 421001 (China); Hu, Bo [School of Electrical Engineering, University of South China, Hengyang, 421001 (China); Rao, Jun; Huang, Mei; Kang, Zihua; Feng, Kun [Southwestern Institute of Physics, Chengdu, 610041 (China); Huang, Jiaqi [School of Electrical Engineering, University of South China, Hengyang, 421001 (China)

2017-04-15

Highlights: • Completed design of all solid-state high-voltage power supply for gyrotron body on HL-2M ECRH. • Consist of 58 PSM modules and one BUCK module, controlled by DSP system. • Fabricated full voltage 35 kV, 200 mA BPS and tested in dummy load. • The BPS can operate in three modes: single pulse mode, multi-pulse modulation mode and the six-level preset mode. - Abstract: Gyrotron plays an important role in the research of electron cyclotron resonance heating (ECRH) on Tokomak. The high-frequency switched power supply technology and pulse step modulation (PSM) technology are used in the development of the all solid high-voltage body power supply (BPS) for 1 MW/105 GHz Gyrotron on ECRH system. Firstly, the basic structure of the BPS and its control system are introduced. Secondly, the software control algorithm of voltage stabilization and modulate method are developed. Finally, the design is verified by the experiments. The experimental results of the single pulse mode, the multi-pulse modulation mode and the six-level preset mode, are shown. The output voltage of the power supply can reach 35 kV and the current at about 200 mA, which are adjustable in the full range. The maximum modulation frequency can reach 1 kHz and the front edge of the pulse can be adjust from 0 to 3 ms and the accuracy of the output voltage is less than 100 V. The results show that the control method is feasible and can be applied to other high power microwave sources.

High-voltage test stand at Livermore

International Nuclear Information System (INIS)

Smith, M.E.

1977-01-01

This paper describes the present design and future capability of the high-voltage test stand for neutral-beam sources at Lawrence Livermore Laboratory. The stand's immediate use will be for testing the full-scale sources (120 kV, 65 A) for the Tokamak Fusion Test Reactor. It will then be used to test parts of the sustaining source system (80 kV, 85 A) being designed for the Magnetic Fusion Test Facility. Following that will be an intensive effort to develop beams of up to 200 kV at 20 A by accelerating negative ions. The design of the test stand features a 5-MVA power supply feeding a vacuum tetrode that is used as a switch and regulator. The 500-kW arc supply and the 100-kW filament supply for the neutral-beam source are battery powered, thus eliminating one or two costly isolation transformers

Light-weight DC to very high voltage DC converter

Energy Technology Data Exchange (ETDEWEB)

Druce, Robert L. (Union City, CA); Kirbie, Hugh C. (Dublin, CA); Newton, Mark A. (Livermore, CA)

1998-01-01

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current.

A Dual Active Bridge Converter with an Extended High-Efficiency Range by DC Blocking Capacitor Voltage Control

DEFF Research Database (Denmark)

Qin, Zian; Shen, Yanfeng; Loh, Poh Chiang

2018-01-01

of hard switching and high circulating power. Thus, a new modulation scheme has been proposed, whose main idea is to introduce a voltage offset across the dc blocking capacitor connected in series with the transformer. Operational principle of the proposed modulation has been introduced, before analyzing...

Zero-Voltage Switching PWM Strategy Based Capacitor Current-Balancing Control for Half-Bridge Three-Level DC/DC Converter

DEFF Research Database (Denmark)

Liu, Dong; Deng, Fujin; Zhang, Qi

2018-01-01

The current imbalance among the two input capacitors is one of the important issues of the half-bridge threelevel (HBTL) DC/DC converter, which would affect system performance and reliability. In this paper, a zero-voltage switching (ZVS) pulse-wide modulation (PWM) strategy including two operation...

35-kV GaAs subnanosecond photoconductive switches

Energy Technology Data Exchange (ETDEWEB)

Pocha, M.D.; Druce, R.L. (Lawrence Livermore National Lab., CA (United States))

1990-12-01

Photoconductive switches are one of the few devices that allow the generation of high-voltage electrical pulses with subnanosecond rise time. The authors are exploring high-voltage, fast-pulse generation using GaAs photoconductive switches. They have been able to generate 35-kV pulses with rise times as short as 135 ps using 5-mm gap switches and have achieved electric field hold-off of greater than 100 kV/cm. They have also been able to generate an approximately 500-ps FWHM on/off electrical pulse with an amplitude of approximately 3 kV using neutron-irradiated GaAs having short carrier life times. This paper describes the experimental results and discusses fabrication of switches and the diagnostics used to measure these fast signals. They also describe the experience with the nonlinear lock-on and avalanche modes of operation observed in GaAs.

Novel zero voltage transition pulse width modulation flyback converter

Science.gov (United States)

Adib, Ehsan; Farzanehfard, Hosein

2010-09-01

In this article, a new zero voltage (ZV) transition flyback converter is introduced which uses a simple auxiliary circuit. In this converter, ZV switching condition is achieved for the converter switch while zero current switching condition is attained for the auxiliary switch. There is no additional voltage and current stress on the main switch. Main diode, auxiliary circuit voltage and current ratings are low. The proposed converter is analysed and design procedure is discussed. The presented experimental results of a prototype converter justify the theoretical analysis.

High-Voltage LED Light Engine with Integrated Driver

Energy Technology Data Exchange (ETDEWEB)

Soer, Wouter [Lumileds LLC, San Jose, CA (United States)

2016-02-29

LED luminaires have seen dramatic changes in cost breakdown over the past few years. The LED component cost, which until recently was the dominant portion of luminaire cost, has fallen to a level of the same order as the other luminaire components, such as the driver, housing, optics etc. With the current state of the technology, further luminaire performance improvement and cost reduction is realized most effectively by optimization of the whole system, rather than a single component. This project focuses on improving the integration between LEDs and drivers. Lumileds has developed a light engine platform based on low-cost high-power LEDs and driver topologies optimized for integration with these LEDs on a single substrate. The integration of driver and LEDs enables an estimated luminaire cost reduction of about 25% for targeted applications, mostly due to significant reductions in driver and housing cost. The high-power LEDs are based on Lumileds’ patterned sapphire substrate flip-chip (PSS-FC) technology, affording reduced die fabrication and packaging cost compared to existing technology. Two general versions of PSS-FC die were developed in order to create the desired voltage and flux increments for driver integration: (i) small single-junction die (0.5 mm²), optimal for distributed lighting applications, and (ii) larger multi-junction die (2 mm² and 4 mm²) for high-power directional applications. Two driver topologies were developed: a tapped linear driver topology and a single-stage switch-mode topology, taking advantage of the flexible voltage configurations of the new PSS-FC die and the simplification opportunities enabled by integration of LEDs and driver on the same board. A prototype light engine was developed for an outdoor “core module” application based on the multi-junction PSS-FC die and the single-stage switch-mode driver. The light engine meets the project efficacy target of 128 lm/W at a luminous flux

The phenomenon of voltage controlled switching in disordered superconductors

International Nuclear Information System (INIS)

Ghosh, Sanjib; De Munshi, D

2014-01-01

The superconductor-to-insulator transition (SIT) is a phenomenon occurring in highly disordered superconductors and may be useful in the development of superconducting switches. The SIT has been demonstrated to be induced by different external parameters: temperature, magnetic field, electric field, etc. However, the electric field induced SIT (ESIT), which has been experimentally demonstrated for some specific materials, holds particular promise for practical device development. Here, we demonstrate, from theoretical considerations, the occurrence of the ESIT. We also propose a general switching device architecture using the ESIT and study some of its universal behavior, such as the effects of sample size, disorder strength and temperature on the switching action. This work provides a general framework for the development of such a device. (paper)

Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

Science.gov (United States)

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

2014-08-04

The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

Five-Phase Five-Level Open-Winding/Star-Winding Inverter Drive for Low-Voltage/High-Current Applications

DEFF Research Database (Denmark)

Padmanaban, Sanjeevi Kumar; Blaabjerg, Frede; Wheeler, Patrick

2016-01-01

This paper work proposed a five-phase five-level open-/star-winding multilevel AC converter suitable for low-voltage/high-current applications. Modular converter consists of classical two-level five-phase voltage source inverter (VSI) with slight reconfiguration to serve as a multilevel converter...... for open-/star-winding loads. Elaborately, per phase of the VSI is built with one additional bi-directional switch (MOSFET/IGBT) and all five legs links to the neutral through two capacitors. The structure allows multilevel generation to five-level output with greater potential for fault tolerability under...

High-performance hybrid complementary logic inverter through monolithic integration of a MEMS switch and an oxide TFT.

Science.gov (United States)

Song, Yong-Ha; Ahn, Sang-Joon Kenny; Kim, Min-Wu; Lee, Jeong-Oen; Hwang, Chi-Sun; Pi, Jae-Eun; Ko, Seung-Deok; Choi, Kwang-Wook; Park, Sang-Hee Ko; Yoon, Jun-Bo

2015-03-25

A hybrid complementary logic inverter consisting of a microelectromechanical system switch as a promising alternative for the p-type oxide thin film transistor (TFT) and an n-type oxide TFT is presented for ultralow power integrated circuits. These heterogeneous microdevices are monolithically integrated. The resulting logic device shows a distinctive voltage transfer characteristic curve, very low static leakage, zero-short circuit current, and exceedingly high voltage gain. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CMOS-compatible high-voltage integrated circuits

Energy Technology Data Exchange (ETDEWEB)

Parpia, Z

1988-01-01

Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

A design for a high voltage magnet coil ringer test set

International Nuclear Information System (INIS)

Koska, W.; Sims, R.E.

1992-04-01

By discharging a bank of charged capacitors through a high power SCR switch into an SSC dipole magnet assembly, it is possible to ''ring'' the coil and develop a voltage stress of greater than 50 volts turn-to-turn, thereby verifying the insulation integrity. We will present an overview of the test set design for a 2 kV isolated SCR firing circuit, including safety features, selectable capacitor banks, and digital waveform storage system. Results from testing typical coils and magnets will be included. Possible upgrades are also discussed

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

Science.gov (United States)

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

Effects of switching frequency and leakage inductance on slow-scale stability in a voltage controlled flyback converter

International Nuclear Information System (INIS)

Wang Fa-Qiang; Ma Xi-Kui

2013-01-01

The effects of both the switching frequency and the leakage inductance on the slow-scale stability in a voltage controlled flyback converter are investigated in this paper. Firstly, the system description and its mathematical model are presented. Then, the improved averaged model, which covers both the switching frequency and the leakage inductance, is established, and the effects of these two parameters on the slow-scale stability in the system are analyzed. It is found that the occurrence of Hopf bifurcation in the system is the main reason for losing its slow-scale stability and both the switching frequency and the leakage inductance have an important effect on this slow-scale stability. Finally, the effectiveness of the improved averaged model and that of the corresponding theoretical analysis are confirmed by the simulation results and the experimental results. (general)

Switched capacitor DC-DC converter with switch conductance modulation and Pesudo-fixed frequency control

DEFF Research Database (Denmark)

Larsen, Dennis Øland; Vinter, Martin; Jørgensen, Ivan Harald Holger

A switched capacitor dc-dc converter with frequency-planned control is presented. By splitting the output stage switches in eight segments the output voltage can be regulated with a combination of switching frequency and switch conductance. This allows for switching at predetermined frequencies, 31...

Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

Science.gov (United States)

Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

2018-06-01

Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

High-voltage picoamperemeter

Energy Technology Data Exchange (ETDEWEB)

Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

2014-07-01

Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

Thermal re-ignition processes of switching arcs with various gas-blast using voltage application highly controlled by powersemiconductors

Science.gov (United States)

Nakano, Tomoyuki; Tanaka, Yasunori; Murai, K.; Uesugi, Y.; Ishijima, T.; Tomita, K.; Suzuki, K.; Shinkai, T.

2018-05-01

This paper focuses on a fundamental experimental approach to thermal arc re-ignition processes in a variety of gas flows in a nozzle. Using power semiconductor switches in the experimental system, the arc current and the voltage applied to the arc were controlled with precise timing. With this system, residual arcs were created in decaying phase under free recovery conditions; arc re-ignition was then intentionally instigated by application of artificial voltage—i.e. quasi-transient recovery voltage—to study the arc behaviour in both decaying and re-ignition phases. In this study, SF6, CO2, N2, O2, air and Ar arcs were intentionally re-ignited by quasi-TRV application at 20 μs delay time from initiation of free recovery condition. Through these experiments, the electron density at the nozzle throat was measured using a laser Thomson scattering method together with high speed video camera observation during the re-ignition process. Temporal variations in the electron density from the arc decaying to re-ignition phases were successfully obtained for each gas-blast arc at the nozzle throat. In addition, initial dielectric recovery properties of SF6, CO2, air and Ar arcs were measured under the same conditions. These data will be useful in the fundamental elucidation of thermal arc re-ignition processes.

Light-weight DC to very high voltage DC converter

Science.gov (United States)

Druce, R.L.; Kirbie, H.C.; Newton, M.A.

1998-06-30

A DC-DC converter capable of generating outputs of 100 KV without a transformer comprises a silicon opening switch (SOS) diode connected to allow a charging current from a capacitor to flow into an inductor. When a specified amount of charge has flowed through the SOS diode, it opens up abruptly; and the consequential collapsing field of the inductor causes a voltage and current reversal that is steered into a load capacitor by an output diode. A switch across the series combination of the capacitor, inductor, and SOS diode closes to periodically reset the SOS diode by inducing a forward-biased current. 1 fig.

Evidence for thermally assisted threshold switching behavior in nanoscale phase-change memory cells

International Nuclear Information System (INIS)

Le Gallo, Manuel; Athmanathan, Aravinthan; Krebs, Daniel; Sebastian, Abu

2016-01-01

In spite of decades of research, the details of electrical transport in phase-change materials are still debated. In particular, the so-called threshold switching phenomenon that allows the current density to increase steeply when a sufficiently high voltage is applied is still not well understood, even though there is wide consensus that threshold switching is solely of electronic origin. However, the high thermal efficiency and fast thermal dynamics associated with nanoscale phase-change memory (PCM) devices motivate us to reassess a thermally assisted threshold switching mechanism, at least in these devices. The time/temperature dependence of the threshold switching voltage and current in doped Ge 2 Sb 2 Te 5 nanoscale PCM cells was measured over 6 decades in time at temperatures ranging from 40 °C to 160 °C. We observe a nearly constant threshold switching power across this wide range of operating conditions. We also measured the transient dynamics associated with threshold switching as a function of the applied voltage. By using a field- and temperature-dependent description of the electrical transport combined with a thermal feedback, quantitative agreement with experimental data of the threshold switching dynamics was obtained using realistic physical parameters

Three-level boost converter with zero voltage transition

Directory of Open Access Journals (Sweden)

Kuo-Ing Hwu

2017-06-01

Full Text Available As compared with the traditional boost converter, the three-level boost converter possesses several advantages, such as lower switch voltage stresses and lower inductor current ripple. To improve the efficiency, this paper proposes a zero voltage transition (ZVT three-level boost converter. With the proposed ZVT circuit, the switches can achieve soft switching. Moreover, by using the voltage balance control, the output voltage can be equally across the output capacitors. In this study, the effectiveness of the proposed topology is verified by the experimental results based on the field-programmable gate array control.

Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

Energy Technology Data Exchange (ETDEWEB)

Baldacchini, Chiara [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy); Institute of Agro-Environmental and Forest Biology, CNR, I-05010 Porano (Italy); Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore, E-mail: cannistr@unitus.it [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy)

2015-05-04

Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

Study of Ag/RGO/ITO sandwich structure for resistive switching behavior deposited on plastic substrate

Science.gov (United States)

Vartak, Rajdeep; Rag, Adarsh; De, Shounak; Bhat, Somashekhara

2018-05-01

We report here the use of facile and environmentally benign way synthesized reduced graphene oxide (RGO) for low-voltage non-volatile memory device as charge storing element. The RGO solutions have been synthesized using electrochemical exfoliation of battery electrode. The solution processed based RGO solution is suitable for large area and low-cost processing on plastic substrate. Room-temperature current-voltage characterisation has been carried out in Ag/RGO/ITO PET sandwich configuration to study the type of trap distribution. It is observed that in the low-voltage sweep, ohmic current is the main mechanism of current flow and trap filled/assisted conduction is observed at high-sweep voltage region. The Ag/RGO/ITO PET sandwich structure showed bipolar resistive switching behavior. These mechanisms can be analyzed based on oxygen availability and vacancies in the RGO giving rise to continuous least resistive path (conductive) and high resistance path along the structure. An Ag/RGO/ITO arrangement demonstrates long retention time with low operating voltage, low set/reset voltage, good ON/OFF ratio of 103 (switching transition between lower resistance state and higher resistance state and decent switching performance. The RGO memory showed decent results with an almost negligible degradation in switching properties which can be used for low-voltage and low-cost advanced flexible electronics.

Very high plasma switches. Basic plasma physics and switch technology

International Nuclear Information System (INIS)

Doucet, H.J.; Roche, M.; Buzzi, J.M.

1988-01-01

A review of some high power switches recently developed for very high power technology is made with a special attention to the aspects of plasma physics involved in the mechanisms, which determine the limits of the possible switching parameters

A study on thermal characteristics analysis model of high frequency switching transformer

Science.gov (United States)

Yoo, Jin-Hyung; Jung, Tae-Uk

2015-05-01

Recently, interest has been shown in research on the module-integrated converter (MIC) in small-scale photovoltaic (PV) generation. In an MIC, the voltage boosting high frequency transformer should be designed to be compact in size and have high efficiency. In response to the need to satisfy these requirements, this paper presents a coupled electromagnetic analysis model of a transformer connected with a high frequency switching DC-DC converter circuit while considering thermal characteristics due to the copper and core losses. A design optimization procedure for high efficiency is also presented using this design analysis method, and it is verified by the experimental result.

Effect of current compliance and voltage sweep rate on the resistive switching of HfO2/ITO/Invar structure as measured by conductive atomic force microscopy

International Nuclear Information System (INIS)

Wu, You-Lin; Liao, Chun-Wei; Ling, Jing-Jenn

2014-01-01

The electrical characterization of HfO 2 /ITO/Invar resistive switching memory structure was studied using conductive atomic force microscopy (AFM) with a semiconductor parameter analyzer, Agilent 4156C. The metal alloy Invar was used as the metal substrate to ensure good ohmic contact with the substrate holder of the AFM. A conductive Pt/Ir AFM tip was placed in direct contact with the HfO 2 surface, such that it acted as the top electrode. Nanoscale current-voltage (I-V) characteristics of the HfO 2 /ITO/Invar structure were measured by applying a ramp voltage through the conductive AFM tip at various current compliances and ramp voltage sweep rates. It was found that the resistance of the low resistance state (RLRS) decreased with increasing current compliance value, but resistance of high resistance state (RHRS) barely changed. However, both the RHRS and RLRS decreased as the voltage sweep rate increased. The reasons for this dependency on current compliance and voltage sweep rate are discussed.

Prediction of breakdown voltages in novel gases for high voltage insulation

International Nuclear Information System (INIS)

Koch, M.

2015-01-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

A study on stimulation of DC high voltage power of LCC series parallel resonant in projectile velocity measurement system

Science.gov (United States)

Lu, Dong-dong; Gu, Jin-liang; Luo, Hong-e.; Xia, Yan

2017-10-01

According to specific requirements of the X-ray machine system for measuring velocity of outfield projectile, a DC high voltage power supply system is designed for the high voltage or the smaller current. The system comprises: a series resonant circuit is selected as a full-bridge inverter circuit; a high-frequency zero-current soft switching of a high-voltage power supply is realized by PWM output by STM32; a nanocrystalline alloy transformer is chosen as a high-frequency booster transformer; and the related parameters of an LCC series-parallel resonant are determined according to the preset parameters of the transformer. The concrete method includes: a LCC series parallel resonant circuit and a voltage doubling circuit are stimulated by using MULTISM and MATLAB; selecting an optimal solution and an optimal parameter of all parts after stimulation analysis; and finally verifying the correctness of the parameter by stimulation of the whole system. Through stimulation analysis, the output voltage of the series-parallel resonant circuit gets to 10KV in 28s: then passing through the voltage doubling circuit, the output voltage gets to 120KV in one hour. According to the system, the wave range of the output voltage is so small as to provide the stable X-ray supply for the X-ray machine for measuring velocity of outfield projectile. It is fast in charging and high in efficiency.

Note: Compact high voltage pulse transformer made using a capacitor bank assembled in the shape of primary.

Science.gov (United States)

Shukla, Rohit; Banerjee, Partha; Sharma, Surender K; Das, Rashmita; Deb, Pankaj; Prabaharan, T; Das, Basanta; Adhikary, Biswajit; Verma, Rishi; Shyam, Anurag

2011-10-01

The experimental results of an air-core pulse transformer are presented, which is very compact (capacitor bank that is fabricated in such a way that the capacitor bank with its switch takes the shape of single-turn rectangular shaped primary of the transformer. A high voltage capacitor assembly (pulse-forming-line capacitor, PFL) of 5.1 nF is connected with the secondary of transformer. The transformer output voltage is 160 kV in its second peak appearing in less than 2 μS from the beginning of the capacitor discharge. The primary capacitor bank can be charged up to a maximum of 18 kV, with the voltage delivery of 360 kV in similar capacitive loads.

Proposal for a dual-gate spin field effect transistor: A device with very small switching voltage and a large ON to OFF conductance ratio

Science.gov (United States)

Wan, J.; Cahay, M.; Bandyopadhyay, S.

2008-06-01

We propose a new dual gate spin field effect transistor (SpinFET) consisting of a quasi one-dimensional semiconductor channel sandwiched between two half-metallic contacts. The gate voltage aligns and de-aligns the incident electron energy with Ramsauer resonance levels in the channel, thereby modulating the source-to-drain conductance. The device can be switched from ON to OFF with a few mV change in the gate voltage, resulting in exceedingly low dynamic power dissipation during switching. The conductance ON/OFF ratio stays fairly large ( ∼60) up to a temperature of 10 K. This conductance ratio is comparable to that achievable with carbon nanotube transistors.

Switched-mode converters (one quadrant)

CERN Document Server

Barrade, P

2006-01-01

Switched-mode converters are DC/DC converters that supply DC loads with a regulated output voltage, and protection against overcurrents and short circuits. These converters are generally fed from an AC network via a transformer and a conventional diode rectifier. Switched-mode converters (one quadrant) are non-reversible converters that allow the feeding of a DC load with unipolar voltage and current. The switched-mode converters presented in this contribution are classified into two families. The first is dedicated to the basic topologies of DC/DC converters, generally used for low- to mid-power applications. As such structures enable only hard commutation processes, the main drawback of such topologies is high commutation losses. A typical multichannel evolution is presented that allows an interesting decrease in these losses. Deduced from this direct DC/DC converter, an evolution is also presented that allows the integration of a transformer into the buck and the buck–boost structure. This enables an int...

Analytical modeling of trilayer graphene nanoribbon Schottky-barrier FET for high-speed switching applications.

Science.gov (United States)

Rahmani, Meisam; Ahmadi, Mohammad Taghi; Abadi, Hediyeh Karimi Feiz; Saeidmanesh, Mehdi; Akbari, Elnaz; Ismail, Razali

2013-01-30

Recent development of trilayer graphene nanoribbon Schottky-barrier field-effect transistors (FETs) will be governed by transistor electrostatics and quantum effects that impose scaling limits like those of Si metal-oxide-semiconductor field-effect transistors. The current-voltage characteristic of a Schottky-barrier FET has been studied as a function of physical parameters such as effective mass, graphene nanoribbon length, gate insulator thickness, and electrical parameters such as Schottky barrier height and applied bias voltage. In this paper, the scaling behaviors of a Schottky-barrier FET using trilayer graphene nanoribbon are studied and analytically modeled. A novel analytical method is also presented for describing a switch in a Schottky-contact double-gate trilayer graphene nanoribbon FET. In the proposed model, different stacking arrangements of trilayer graphene nanoribbon are assumed as metal and semiconductor contacts to form a Schottky transistor. Based on this assumption, an analytical model and numerical solution of the junction current-voltage are presented in which the applied bias voltage and channel length dependence characteristics are highlighted. The model is then compared with other types of transistors. The developed model can assist in comprehending experiments involving graphene nanoribbon Schottky-barrier FETs. It is demonstrated that the proposed structure exhibits negligible short-channel effects, an improved on-current, realistic threshold voltage, and opposite subthreshold slope and meets the International Technology Roadmap for Semiconductors near-term guidelines. Finally, the results showed that there is a fast transient between on-off states. In other words, the suggested model can be used as a high-speed switch where the value of subthreshold slope is small and thus leads to less power consumption.

Reversible Resistance Switching Effect in Amorphous Ge1Sb4Te7 Thin Films without Phase Transformation

International Nuclear Information System (INIS)

Hua-Jun, Sun; Li-Song, Hou; Yi-Qun, Wu; Xiao-Dong, Tang

2009-01-01

We demonstrate a reversible resistance switching effect that does not rely on amorphous-crystalline phase transformation in a nanoscale capacitor-like cell using Ge 1 Sb 4 Te 7 films as the working material. The polarity and amplitude of the applied electric voltage switches the cell resistance between low- and high-resistance states, as revealed in the current-voltage characteristics of the film by conductive atomic force microscopy (CAFM). This reversible SET/RESET switching effect is induced by voltage pulses and their polarity. The change of electrical resistance due to the switching effect is approximately two orders of magnitude

Prediction of breakdown voltages in novel gases for high voltage insulation

Energy Technology Data Exchange (ETDEWEB)

Koch, M.

2015-07-01

This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

Light-activated resistance switching in SiOx RRAM devices

Science.gov (United States)

Mehonic, A.; Gerard, T.; Kenyon, A. J.

2017-12-01

We report a study of light-activated resistance switching in silicon oxide (SiOx) resistive random access memory (RRAM) devices. Our devices had an indium tin oxide/SiOx/p-Si Metal/Oxide/Semiconductor structure, with resistance switching taking place in a 35 nm thick SiOx layer. The optical activity of the devices was investigated by characterising them in a range of voltage and light conditions. Devices respond to illumination at wavelengths in the range of 410-650 nm but are unresponsive at 1152 nm, suggesting that photons are absorbed by the bottom p-type silicon electrode and that generation of free carriers underpins optical activity. Applied light causes charging of devices in the high resistance state (HRS), photocurrent in the low resistance state (LRS), and lowering of the set voltage (required to go from the HRS to LRS) and can be used in conjunction with a voltage bias to trigger switching from the HRS to the LRS. We demonstrate negative correlation between set voltage and applied laser power using a 632.8 nm laser source. We propose that, under illumination, increased electron injection and hence a higher rate of creation of Frenkel pairs in the oxide—precursors for the formation of conductive oxygen vacancy filaments—reduce switching voltages. Our results open up the possibility of light-triggered RRAM devices.

Neutron and gamma irradiation effects on power semiconductor switches

Science.gov (United States)

Schwarze, G. E.; Frasca, A. J.

1990-01-01

The performance characteristics of high power semiconductor switches subjected to high levels of neutron fluence and gamma dose must be known by the designer of the power conditioning, control and transmission subsystem of space nuclear power systems. Location and the allowable shielding mass budget will determine the level of radiation tolerance required by the switches to meet performance and reliability requirements. Neutron and gamma ray interactions with semiconductor materials and how these interactions affect the electrical and switching characteristics of solid state power switches is discussed. The experimental measurement system and radiation facilities are described. Experimental data showing the effects of neutron and gamma irradiation on the performance characteristics are given for power-type NPN Bipolar Junction Transistors (BJTs), and Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs). BJTs show a rapid decrease in gain, blocking voltage, and storage time for neutron irradiation, and MOSFETs show a rapid decrease in the gate threshold voltage for gamma irradiation.

Dynamic state switching in nonlinear multiferroic cantilevers

Science.gov (United States)

Wang, Yi; Onuta, Tiberiu-Dan; Long, Christian J.; Lofland, Samuel E.; Takeuchi, Ichiro

2013-03-01

We demonstrate read-write-read-erase cyclical mechanical-memory properties of all-thin-film multiferroic heterostructured Pb(Zr0.52Ti0.48) O3 / Fe0.7Ga0.3 cantilevers when a high enough voltage around the resonant frequency of the device is applied on the Pb(Zr0.52Ti0.48) O3 piezo-film. The device state switching process occurs due to the presence of a hysteresis loop in the piezo-film frequency response, which comes from the nonlinear behavior of the cantilever. The reference frequency at which the strain-mediated Fe0.7Ga0.3 based multiferroic device switches can also be tuned by applying a DC magnetic field bias that contributes to the increase of the cantilever effective stiffness. The switching dynamics is mapped in the phase space of the device measured transfer function characteristic for such high piezo-film voltage excitation, providing additional information on the dynamical stability of the devices.

LED-Based High-Voltage Lines Warning System

Directory of Open Access Journals (Sweden)

Eldar MUSA

2013-04-01

Full Text Available LED-based system, running with the current of high-voltage lines and converting the current flowing through the line into the light by using a toroid transformer, has been developed. The transformer’s primary winding is constituted by the high voltage power line. Toroidal core consists of two equal parts and the secondary windings are evenly placed on these two parts. The system is mounted on the high-voltage lines as a clamp. The secondary winding ends are connected in series by the connector on the clamp. LEDs are supplied by the voltage at the ends of secondary. Current flowing through highvoltage transmission lines is converted to voltage by the toroidal transformer and the light emitting LEDs are supplied with this voltage. The theory of the conversion of the current flowing through the line into the light is given. The system, running with the current of the line and converting the current into the light, has been developed. System has many application areas such as warning high voltage lines (warning winches to not hinder the high-voltage lines when working under the lines, warning planes to not touch the high-voltage lines, remote measurement of high-voltage line currents, and local illumination of the line area

All-fiber polarization switch

Science.gov (United States)

Knape, Harald; Margulis, Walter

2007-03-01

We report an all-fiber polarization switch made out of silica-based microstructured fiber suitable for Q-switching all-fiber lasers. Nanosecond high-voltage pulses are used to heat and expand an internal electrode to cause λ/2-polarization rotation in less than 10 ns for 1.5 μm light. The 10 cm long component has an experimentally measured optical insertion loss of 0.2 dB and a 0-10 kHz repetition frequency capacity and has been durability tested for more than 109 pulses.

Implementation of Single Phase Soft Switched PFC Converter for Plug-in-Hybrid Electric Vehicles

Directory of Open Access Journals (Sweden)

Aiswariya Sekar

2015-11-01

Full Text Available This paper presents a new soft switching boost converter with a passive snubber cell without additional active switches for battery charging systems. The proposed snubber finds its application in the front-end ac-dc converter of Plug-in Hybrid Electric Vehicle (PHEV battery chargers. The proposed auxiliary snubber circuit consists of an inductor, two capacitors and two diodes. The new converter has the advantages of continuous input current, low switching stresses, high voltage gain without extreme duty cycle, minimized charger size and charging time and fewer amounts of cost and electricity drawn from the utility at higher switching frequencies. The switch is made to turn ON by Zero Current Switching (ZCS and turn OFF by Zero Voltage Switching (ZVS. The detailed steady state analysis of the novel ac-dc Zero Current- Zero Voltage Switching (ZC-ZVS boost Power Factor Correction (PFC converter is presented with its operating principle. The experimental prototype of 20 kHz, 100 W converter verifies the theoretical analysis. The power factor of the prototype circuit reaches near unity with an efficiency of 97%, at nominal output power for a ±10% variation in the input voltage and ±20% variation in the snubber component values.

76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

Science.gov (United States)

2011-11-15

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011...

Role of advanced RF/microwave technology and high power switch technology for developing/upgrading compact/existing accelerators

International Nuclear Information System (INIS)

Shrivastava, Purushottam

2001-01-01

With the advances in high power microwave devices as well as in microwave technologies it has become possible to go on higher frequencies at higher powers as well as to go for newer devices which are more efficient and compact and hence reducing the power needs as well as space and weight requirement for accelerators. New devices are now available in higher frequency spectrum for example at C-Band, X-band and even higher. Also new devices like klystrodes/Higher Order Mode Inductive Output Tubes (HOM IOTs) are now becoming competitors for existing tubes which are in use at present accelerator complexes. The design/planning of the accelerators used for particle physics research, medical accelerators, industrial irradiation, or even upcoming Driver Accelerators for Sub Critical Reactors for nuclear power generation are being done taking into account the newer technologies. The accelerators which use magnetrons, klystrons and similar devices at S-Band can be modified/redesigned with devices at higher frequencies like X-Band. Pulsed accelerators need high power high voltage pulsed modulators whereas CW accelerators need high voltage power supplies for functioning of RF / Microwave tubes. There had been a remarkable growth in the development and availability of solid state switches both for switching the pulsed modulators for microwave tubes as well as for making high frequency switch mode power supplies. Present paper discusses some of the advanced devices/technologies in this field as well as their capability to make advanced/compact/reliable accelerators. Microwave systems developed/under development at Centre for Advanced Technology are also discussed briefly along with some of the efforts done to make them compact. An overview of state of art vacuum tube devices and solid state switch technologies is given. (author)

High-Voltage, Multiphasic, Nanosecond Pulses to Modulate Cellular Responses.

Science.gov (United States)

Ryan, Hollie A; Hirakawa, Shinji; Yang, Enbo; Zhou, Chunrong; Xiao, Shu

2018-04-01

Nanosecond electric pulses are an effective power source in plasma medicine and biological stimulation, in which biophysical responses are governed by peak power and not energy. While uniphasic nanosecond pulse generators are widely available, the recent discovery that biological effects can be uniquely modulated by reversing the polarity of nanosecond duration pulses calls for the development of a multimodal pulse generator. This paper describes a method to generate nanosecond multiphasic pulses for biomedical use, and specifically demonstrates its ability to cancel or enhance cell swelling and blebbing. The generator consists of a series of the fundamental module, which includes a capacitor and a MOSFET switch. A positive or a negative phase pulse module can be produced based on how the switch is connected. Stacking the modules in series can increase the voltage up to 5 kV. Multiple stacks in parallel can create multiphase outputs. As each stack is independently controlled and charged, multiphasic pulses can be created to produce flexible and versatile pulse waveforms. The circuit topology can be used for high-frequency uniphasic or biphasic nanosecond burst pulse production, creating numerous opportunities for the generator in electroporation applications, tissue ablation, wound healing, and nonthermal plasma generation.

A bidirectional soft switched ultracapacitor interface circuit for hybrid electric vehicles

Energy Technology Data Exchange (ETDEWEB)

Farzanehfard, Hosein; Beyragh, Dawood Shekari; Adib, Ehsan [Electrical and Computer Engineering Department, Isfahan University of Technology, Isfahan 84156 (Iran)

2008-12-15

Ultracapacitors are used as auxiliary elements beside batteries to increase peak power capability and battery life in hybrid electric vehicles. In such a configuration, a bidirectional high efficiency converter is required as an interface between ultracapacitors and batteries. Since the voltage level of ultracapacitors and batteries are different, the interface must be able to increase or decrease the voltage level in each power flow direction while limiting the current. This paper presents a zero voltage transition (ZVT) buck-and-boost converter for ultracapacitors interface. All the switches in the proposed converter are soft switched to reduce switching losses and increase efficiency. The converter operational modes are analyzed and its performance is discussed. Finally, the experimental results from a 150 W laboratory prototype are presented which justify the theoretical analysis. (author)

Enhanced resistive switching in forming-free graphene oxide films embedded with gold nanoparticles deposited by electrophoresis

International Nuclear Information System (INIS)

Khurana, Geetika; Kumar, Nitu; Katiyar, Ram S; Misra, Pankaj; Kooriyattil, Sudheendran; Scott, James F

2016-01-01

Forming-free resistive random access memory (ReRAM) devices having low switching voltages are a prerequisite for their commercial applications. In this study, the forming-free resistive switching characteristics of graphene oxide (GO) films embedded with gold nanoparticles (Au Nps), having an enhanced on/off ratio at very low switching voltages, were investigated for non-volatile memories. The GOAu films were deposited by the electrophoresis method and as-grown films were found to be in the low resistance state; therefore no forming voltage was required to activate the devices for switching. The devices having an enlarged on/off ratio window of ∼10"6 between two resistance states at low voltages (<1 V) for repetitive dc voltage sweeps showed excellent properties of endurance and retention. In these films Au Nps were uniformly dispersed over a large area that provided charge traps, which resulted in improved switching characteristics. Capacitance was also found to increase by a factor of ∼10, when comparing high and low resistance states in GOAu and pristine GO devices. Charge trapping and de-trapping by Au Nps was the mechanism responsible for the improved switching characteristics in the films. (paper)

Engineering the switching dynamics of TiO{sub x}-based RRAM with Al doping

Energy Technology Data Exchange (ETDEWEB)

Trapatseli, Maria, E-mail: mt3c13@soton.ac.uk; Khiat, Ali; Cortese, Simone; Serb, Alexantrou; Carta, Daniela; Prodromakis, Themistoklis [Nano Group, School of Electronics and Computer Science, University of Southampton, Southampton SO17 1BJ (United Kingdom)

2016-07-14

Titanium oxide (TiO{sub x}) has attracted a lot of attention as an active material for resistive random access memory (RRAM), due to its versatility and variety of possible crystal phases. Although existing RRAM materials have demonstrated impressive characteristics, like ultra-fast switching and high cycling endurance, this technology still encounters challenges like low yields, large variability of switching characteristics, and ultimately device failure. Electroforming has been often considered responsible for introducing irreversible damage to devices, with high switching voltages contributing to device degradation. In this paper, we have employed Al doping for tuning the resistive switching characteristics of titanium oxide RRAM. The resistive switching threshold voltages of undoped and Al-doped TiO{sub x} thin films were first assessed by conductive atomic force microscopy. The thin films were then transferred in RRAM devices and tested with voltage pulse sweeping, demonstrating that the Al-doped devices could on average form at lower potentials compared to the undoped ones and could support both analog and binary switching at potentials as low as 0.9 V. This work demonstrates a potential pathway for implementing low-power RRAM systems.

Estimation of Transformer Parameters and Loss Analysis for High Voltage Capacitor Charging Application

DEFF Research Database (Denmark)

Thummala, Prasanth; Schneider, Henrik; Ouyang, Ziwei

2013-01-01

In a bi-directional DC-DC converter for capacitive charging application, the losses associated with the transformer makes it a critical component. In order to calculate the transformer losses, its parameters such as AC resistance, leakage inductance and self capacitance of the high voltage (HV......) winding has to be estimated accurately. This paper analyzes the following losses of bi-directional flyback converter namely switching loss, conduction loss, gate drive loss, transformer core loss, and snubber loss, etc. Iterative analysis of transformer parameters viz., AC resistance, leakage inductance...

Flexible, ferroelectric nanoparticle doped polymer dispersed liquid crystal devices for lower switching voltage and nanoenergy generation

Science.gov (United States)

Nimmy John, V.; Varanakkottu, Subramanyan Namboodiri; Varghese, Soney

2018-06-01

Flexible polymer dispersed liquid crystal (F-PDLC) devices were fabricated using transparent conducting ITO/PET film. Polymerization induced phase separation (PIPS) method was used for pure and ferroelectric BaTiO3 (BTO) and ZnO doped PDLC devices. The distribution of nanoparticles in the PDLC and the formation of micro cavities were studied using field emission scanning electron microscopy (FESEM). It was observed that the addition of ferroelectric BTO nanoparticles has reduced the threshold voltage (Vth) and saturation voltage (Vsat) of FNP-PDLC by 85% and 41% respectively due to the spontaneous polarization of ferroelectric nanoparticles. The ferroelectric properties of BTO and ZnO in the fabricated devices were investigated using dynamic contact electrostatic force microscopy (DC EFM). Flexing the device can generate a potential due to the piezo-tribo electric effect of the ferroelectric nanomaterial doped in the PDLC matrix, which could be utilized as an energy generating system. The switching voltage after multiple flexing was also studied and found to be in par with non-flexing situations.

An improved method for predicting the lightning performance of high and extra-high-voltage substation shielding

Science.gov (United States)

Vinh, T.

1980-08-01

There is a need for better and more effective lightning protection for transmission and switching substations. In the past, a number of empirical methods were utilized to design systems to protect substations and transmission lines from direct lightning strokes. The need exists for convenient analytical lightning models adequate for engineering usage. In this study, analytical lightning models were developed along with a method for improved analysis of the physical properties of lightning through their use. This method of analysis is based upon the most recent statistical field data. The result is an improved method for predicting the occurrence of sheilding failure and for designing more effective protection for high and extra high voltage substations from direct strokes.

Electro-optic control of a PPLN-unpoled LiNbO3 boundary for low-voltage Q switching of an intracavity frequency-doubled Nd3+:YVO4 laser.

Science.gov (United States)

Torregrosa, A J; Maestre, H; Fernández-Pousa, C R; Pereda, J A; Capmany, J

2009-08-01

We present a simple technique to integrate an electro-optic Q switch in a periodically poled bulk lithium niobate crystal bounded by two unpoled (monodomain) regions. The technique exploits the high sensitivity to low applied electric fields of the total internal reflection condition in the periodic poled-unpoled boundary for the small grazing incidence angles associated with the diffraction of a focused Gaussian beam that propagates in the periodically poled region with its axis parallel to the boundary. When the arrangement is placed intracavity to a 1064 nm diode-pumped Nd(3+):YVO(4) laser, it performs simultaneously as a Q switch and as a second-harmonic generator, with Q switching starting at applied voltages as low as 1 V over a 500 microm thickness and with no additional optical elements.

Ultrafast pulse generation in photoconductive switches

DEFF Research Database (Denmark)

Keil, Ulrich Dieter Felix; Dykaar, D. R.

1996-01-01

Carrier and field dynamics in photoconductive switches are investigated by electrooptic sampling and voltage-dependent reflectivity measurements. We show that the nonuniform field distribution due to the two-dimensional nature of coplanar photoconductive switches, in combination with the large di...... difference in the mobilities of holes and electrons, determine the pronounced polarity dependence. Our measurements indicate that the pulse generation mechanism is a rapid voltage breakdown across the photoconductive switch and not a local field breakdown...

Dynamic optimum dead time in piezoelectric transformer-based switch-mode power supplies

DEFF Research Database (Denmark)

Ekhtiari, Marzieh; Andersen, Thomas; Andersen, Michael A. E.

2016-01-01

to charge and discharge the input capacitance of piezoelectric transformers in order to achieve zero-voltage switching. This paper proposes a method for detecting the optimum dead time in piezoelectric transformer-based switch-mode power supplies. The provision of sufficient dead time in every cycle......Soft switching is required to attain high efficiency in high-frequency power converters. Piezoelectric transformerbased converters can benefit from soft switching in terms of significantly diminished switching losses and stresses. Adequate dead time is needed in order to deliver sufficient energy...

On-site voltage measurement with capacitive sensors on high voltage systems

NARCIS (Netherlands)

Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

2011-01-01

In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

Ionization smoke detectors - the high-voltage issues

International Nuclear Information System (INIS)

Anon.

1992-01-01

Production of high-voltage ionization smoke detectors ceased in 1978 following the development of lower voltage models which used much smaller amounts of radioactive material. Despite this fact, thousands of high-voltage detectors are still in use today in many large UK companies. The major users argue that there is no reason to stop using their detectors if they are still fit for their purpose - many could last for another 15 to 20 years if properly maintained. But pressure has been mounting on businesses to replace all their high-voltage detectors with new low-voltage models within the next couple of years. This could place a huge financial burden on the companies concerned, with costs possibly running into millions of pounds. Traditionally, the major detector installers offered cleaning and maintenance services for high-voltage detectors to their customers but these have now been withdrawn. The installers give no clear reasons for this decision except that the detectors are outmoded and should be disposed of as soon as possible. Most users would agree that conversion to low-voltage types is inevitable but their main worry is the financial strain of replacing all their detectors - and associated equipment - in one go. They would prefer to phase out their high-voltage detectors in stages over a number of years to spread the costs of conversion. The problems of maintenance is discussed. A dual voltage fire alarm panel which allows the high-voltage detectors to be phased out is mentioned. (Author)

High voltage engineering fundamentals

CERN Document Server

Kuffel, E; Hammond, P

1984-01-01

Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

Dual-Input Soft-Switched DC-DC Converter with Isolated Current-Fed Half-Bridge and Voltage-Fed Full-Bridge for Fuel Cell or Photovoltaic Systems

DEFF Research Database (Denmark)

Zhang, Zhe; Thomsen, Ole Cornelius; Andersen, Michael A. E.

2013-01-01

integrate a current-fed boost half-bridge (BHB) and a full-bridge (FB) into one equivalent circuit configuration which has dual-input ability and additionally it can reduce the number of the power devices. With the phase-shift control, it can achieve zero-voltage switching turn-on of active switches...... power rating are built up and tested to demonstrate the effectiveness of the proposed converter topology....

30 CFR 75.804 - Underground high-voltage cables.

Science.gov (United States)

2010-07-01

... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section...

Soft switching resonant converter with duty-cycle control in DC micro-grid system

Science.gov (United States)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

Automatic voltage imbalance detector

Science.gov (United States)

Bobbett, Ronald E.; McCormick, J. Byron; Kerwin, William J.

1984-01-01

A device for indicating and preventing damage to voltage cells such as galvanic cells and fuel cells connected in series by detecting sequential voltages and comparing these voltages to adjacent voltage cells. The device is implemented by using operational amplifiers and switching circuitry is provided by transistors. The device can be utilized in battery powered electric vehicles to prevent galvanic cell damage and also in series connected fuel cells to prevent fuel cell damage.

Design and measurements of a fast high-voltage pulse generator for the MedAustron Low Energy Transfer line fast deflector