WorldWideScience

Sample records for high voltage breakdown

  1. High frequency breakdown voltage

    International Nuclear Information System (INIS)

    Chu, Thanh Duy.

    1992-03-01

    This report contains information about the effect of frequency on the breakdown voltage of an air gap at standard pressure and temperature, 76 mm Hg and O degrees C, respectively. The frequencies of interest are 47 MHz and 60 MHz. Additionally, the breakdown in vacuum is briefly considered. The breakdown mechanism is explained on the basis of collision and ionization. The presence of the positive ions produced by ionization enhances the field in the gap, and thus determines the breakdown. When a low-frequency voltage is applied across the gap, the breakdown mechanism is the same as that caused by the DC or static voltage. However, when the frequency exceeds the first critical value f c , the positive ions are trapped in the gap, increasing the field considerably. This makes the breakdown occur earlier; in other words, the breakdown voltage is lowered. As the frequency increases two decades or more, the second critical frequency, f ce , is reached. This time the electrons start being trapped in the gap. Those electrons that travel multiple times across the gap before reaching the positive electrode result in an enormous number of electrons and positive ions being present in the gap. The result is a further decrease of the breakdown voltage. However, increasing the frequency does not decrease the breakdown voltage correspondingly. In fact, the associated breakdown field intensity is almost constant (about 29 kV/cm).The reason is that the recombination rate increases and counterbalances the production rate, thus reducing the effect of the positive ions' concentration in the gap. The theory of collision and ionization does not apply to the breakdown in vacuum. It seems that the breakdown in vacuum is primarily determined by the irregularities on the surfaces of the electrodes. Therefore, the effect of frequency on the breakdown, if any, is of secondary importance

  2. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output

  3. Prediction of breakdown voltages in novel gases for high voltage insulation

    Energy Technology Data Exchange (ETDEWEB)

    Koch, M.

    2015-07-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF{sub 6}) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF{sub 6} is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF{sub 6} in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF{sub 6} based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media.

  4. Prediction of breakdown voltages in novel gases for high voltage insulation

    International Nuclear Information System (INIS)

    Koch, M.

    2015-01-01

    This thesis submitted to the Swiss Federal Institute of Technology ETH in Zurich examines the use of sulphur hexafluoride (SF_6) and similar gases as important insulation media for high voltage equipment. Due to its superior insulation properties, SF_6 is widely used in gas-insulated switchgear. However, the gas also has a very high global warming potential and the content of SF_6 in the atmosphere is constantly increasing. The search for new insulation gases using classical breakdown experiments is discussed. A model for SF_6 based on the stepped leader model is described. This calculates the breakdown voltages in arbitrary electrode configurations and under standard voltage waveforms. Thus, the thesis provides a method for the prediction of breakdown voltages of arbitrary field configurations under standard voltage waveforms for gases with electron-attaching properties. With this, further gases can be characterized for usage as high voltage insulation media

  5. High-voltage atmospheric breakdown across intervening rutile dielectrics.

    Energy Technology Data Exchange (ETDEWEB)

    Williamson, Kenneth Martin; Simpson, Sean; Coats, Rebecca Sue; Jorgenson, Roy Eberhardt; Hjalmarson, Harold Paul; Pasik, Michael Francis

    2013-09-01

    This report documents work conducted in FY13 on electrical discharge experiments performed to develop predictive computational models of the fundamental processes of surface breakdown in the vicinity of high-permittivity material interfaces. Further, experiments were conducted to determine if free carrier electrons could be excited into the conduction band thus lowering the effective breakdown voltage when UV photons (4.66 eV) from a high energy pulsed laser were incident on the rutile sample. This report documents the numerical approach, the experimental setup, and summarizes the data and simulations. Lastly, it describes the path forward and challenges that must be overcome in order to improve future experiments for characterizing the breakdown behavior for rutile.

  6. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    High voltage breakdowns (HVBs) occur in many vacuum devices. It frequently is of great practical interest to know the type (or mode) of such HVB's, since this can indicate weak points in the device. Post-mortems can sometimes be helpful, but it would be quite desirable to have a technique which would allow the HVB mode to be determined in an operating device. Photography can be quite helpful, but unfortunately many devices do not permit optical access to the region of interest. However, the idea of using photography in conjunction with other diagnostic techniques to establish the validity of these techniques seemed promising, since these techniques could then be used to determine the mode of HVBs in opaque devices. A literature search indicates that promising techniques are to measure the voltage applied to the device (or the current through the device) and also to look for x-rays generated by the device during an HVB

  7. Characteristics and Breakdown Behaviors of Polysilicon Resistors for High Voltage Applications

    Directory of Open Access Journals (Sweden)

    Xiao-Yu Tang

    2015-01-01

    Full Text Available With the rapid development of the power integrated circuit technology, polysilicon resistors have been widely used not only in traditional CMOS circuits, but also in the high voltage applications. However, there have been few detailed reports about the polysilicon resistors’ characteristics, like voltage and temperature coefficients and breakdown behaviors which are critical parameters of high voltage applications. In this study, we experimentally find that the resistance of the polysilicon resistor with a relatively low doping concentration shows negative voltage and temperature coefficients, while that of the polysilicon resistor with a high doping concentration has positive voltage and temperature coefficients. Moreover, from the experimental results of breakdown voltages of the polysilicon resistors, it could be deduced that the breakdown of polysilicon resistors is thermally rather than electrically induced. We also proposed to add an N-type well underneath the oxide to increase the breakdown voltage in the vertical direction when the substrate is P-type doped.

  8. Experimental research for vacuum gap breakdown in high voltage multi-pulse

    International Nuclear Information System (INIS)

    Huang Ziping; He Jialong; Chen Sifu; Deng Jianjun; Wang Liping

    2008-01-01

    Base on the breakdown theory of vacuum gaps, experiments have been done to find out the breakdown electric field intensities in high voltage single-and triple-pulse for 26 vacuum gaps with different shapes. The experimental results match up to the theory and confirm the effect of the pulse-number increase on the breakdown electric field intensity. The key point to decide the macroscopical breakdown electric field intensity of a vacuum gap has been pointed out with some advises about the design of a multi-pulse linear inductive accelerator's accelerate gap. (authors)

  9. Analyzing randomly occurring voltage breakdowns

    International Nuclear Information System (INIS)

    Wiltshire, C.W.

    1977-01-01

    During acceptance testing of high-vacuum neutron tubes, 40% of the tubes failed after experiencing high-voltage breakdowns during the aging process. Use of a digitizer in place of an oscilloscope revealed two types of breakdowns, only one of which affected acceptance testing. This information allowed redesign of the aging sequence to prevent tube damage and improve yield and quality of the final product

  10. Ionizing potential waves and high-voltage breakdown streamers.

    Science.gov (United States)

    Albright, N. W.; Tidman, D. A.

    1972-01-01

    The structure of ionizing potential waves driven by a strong electric field in a dense gas is discussed. Negative breakdown waves are found to propagate with a velocity proportional to the electric field normal to the wavefront. This causes a curved ionizing potential wavefront to focus down into a filamentary structure, and may provide the reason why breakdown in dense gases propagates in the form of a narrow leader streamer instead of a broad wavefront.

  11. Fabrication of 4H-SiC Schottky barrier diodes with high breakdown voltages

    CERN Document Server

    Kum, B H; Shin, M W; Park, J D

    1999-01-01

    This paper discusses the fabrication and the breakdown characteristics of 4H-SiC Schottky barrier diodes (SBDs). Optimal processing conditions for the ohmic contacts were extracted using the transmission-line method (TLM) and were applied to the device fabrication. The Ti/4H-SiC SBDs with Si sub x B sub y passivation showed a maximum reverse breakdown voltage of 268 V with a forward current density as high as 70 mA/cm sup 2 at a forward voltage of 2 V. The breakdown of the Pt. 4H-SiC SBDs without any passivation occurred at near 110 V. It is concluded that the breakdown enhancement in the Ti/4H-SiC SBDs can be attributed to the passivation; otherwise, excess surface charge near the edge of the Schottky contact would lead to electric fields of sufficient magnitude to cause field emission.

  12. Energetic high-voltage breakdowns in vacuum over a large gap for ITER neutral beam accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Villecroze, F., E-mail: Frederic.villecroze@cea.fr [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Christin, L.; Esch, H.P.L. de; Simonin, A. [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Schunke, B.; Svensson, L.; Hemsworth, R.; Boilson, D. [ITER Organization, Route de Vinon sur Verdon, 13115 Saint Paul Lez Durance (France)

    2013-10-15

    Highlights: ► We performed energetic high voltage breakdowns up to 370 kV with a stored energy of 1 kJ. ► No breakdowns at 200 kV could be produced over a gap of 85 mm using 100 cm{sup 2} copper electrodes. ► Electrodes damage was visible after the experiment. ► The number of arcs impacts is orders of magnitude above the number of breakdowns. -- Abstract: CEA has undertaken tests to study the resilience of copper electrodes in vacuum against energetic high-voltage breakdowns using external capacitors to provide the energy. Earlier tests succeeded in dissipating a maximum of 150 J in a 30 mm gap, limited by the equivalent series resistance (ESR) in the external capacitors. Using new ones with an ESR that is a factor of 10 lower it was unsuccessfully tried to produce breakdowns at 200 kV over the 85 mm gap, despite the use of a UV flash lamp and a “field enhancement ring” (FER) that locally increased the electric field on the cathode by 50%. Consequently, the breakdowns had to be produced by raising the voltage to 300–350 kV while maintaining the gap at 85 mm. During these tests, single breakdowns dissipated up to 1140 J in the 85 mm vacuum gap. Inspection of the electrodes revealed that substantial amounts of copper appear have been evaporated from the anode and deposited on to the cathode. Also electrode deconditioning occurred.

  13. Subnanosecond breakdown development in high-voltage pulse discharge: Effect of secondary electron emission

    Science.gov (United States)

    Alexandrov, A. L.; Schweigert, I. V.; Zakrevskiy, Dm. E.; Bokhan, P. A.; Gugin, P.; Lavrukhin, M.

    2017-10-01

    A subnanosecond breakdown in high-voltage pulse discharge may be a key tool for superfast commutation of high power devices. The breakdown in high-voltage open discharge at mid-high pressure in helium was studied in experiment and in kinetic simulations. The kinetic model of electron avalanche development was constructed, based on PIC-MCC simulations, including dynamics of electrons, ions and fast helium atoms, produced by ions scattering. Special attention was paid to electron emission processes from cathode, such as: photoemission by Doppler-shifted resonant photons, produced in excitation processes involving fast atoms; electron emission by ions and fast atoms bombardment of cathode; the secondary electron emission (SEE) by hot electrons from bulk plasma. The simulations show that the fast atoms accumulation is the main reason of emission growth at the early stage of breakdown, but at the final stage, when the voltage on plasma gap diminishes, namely the SEE is responsible for subnanosecond rate of current growth. It was shown that the characteristic time of the current growth can be controlled by the SEE yield. The influence of SEE yield for three types of cathode material (titanium, SiC, and CuAlMg-alloy) was tested. By changing the pulse voltage amplitude and gas pressure, the area of existence of subnanosecond breakdown is identified. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time value as small as τs = 0.4 ns, for the pulse voltage amplitude of 5÷12 kV. An increase of gas pressure from 15 Torr to 30 Torr essentially decreases the time of of current front growth, whereas the pulse voltage variation weakly affects the results.

  14. Effect of secondary electron emission on subnanosecond breakdown in high-voltage pulse discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Gugin, P.; Lavrukhin, M.; Bokhan, P. A.; Zakrevsky, Dm E.

    2017-11-01

    The subnanosecond breakdown in open discharge may be applied for producing superfast high power switches. Such fast breakdown in high-voltage pulse discharge in helium was explored both in experiment and in kinetic simulations. The kinetic model of electron avalanche development was developed using PIC-MCC technique. The model simulates motion of electrons, ions and fast helium atoms, appearing due to ions scattering. It was shown that the mechanism responsible for ultra-fast breakdown development is the electron emission from cathode. The photoemission and emission by ions or fast atoms impact is the main reason of current growth at the early stage of breakdown, but at the final stage, when the voltage on discharge gap drops, the secondary electron emission (SEE) is responsible for subnanosecond time scale of current growth. It was also found that the characteristic time of the current growth τS depends on the SEE yield of the cathode material. Three types of cathode material (titanium, SiC, and CuAlMg-alloy) were tested. It is shown that in discharge with SiC and CuAlMg-alloy cathodes (which have enhanced SEE) the current can increase with a subnanosecond characteristic time as small as τS = 0.4 ns, for the pulse voltage amplitude of 5- 12 kV..

  15. High voltage capacitor design and the determination of solid dielectric voltage breakdown

    International Nuclear Information System (INIS)

    Hutapea, S.

    1976-01-01

    The value of the external field intensity serves as an electrical insulating material and is a physical characteristic of the substance. Capacitor discharge in the dielectric medium are experimentally investigated. The high voltage power supply and other instrument needed are briefly discussed. Capacitors with working voltage of 30.000 volt and the plastic being used for dielectrics in the capacitors are also discussed. (author)

  16. Voltage breakdown on niobium and copper surfaces

    International Nuclear Information System (INIS)

    Werner, G.R.; Padamsee, H.; Betzwieser, J.C.; Liu, Y.G.; Rubin, K.H.R.; Shipman, J.E.; Ying, L.T.

    2003-01-01

    Experiments have shown that voltage breakdown in superconducting niobium RF cavities is in many ways similar to voltage breakdown on niobium cathodes in DC voltage gaps; most striking are the distinctive starburst patterns and craters that mark the site of voltage breakdown in both superconducting cavities and DC vacuum gaps. Therefore, we can learn much about RF breakdown from simpler, faster DC experiments. We have direct evidence, in the form of before'' and ''after'' pictures, that breakdown events caused by high surface electric fields occur with high probability at contaminant particles on surfaces. Although the pre-breakdown behavior (field emission) seems to depend mostly on the contaminant particles present and little on the substrate, the breakdown event itself is greatly affected by the substrate-niobium, heavily oxidized niobium, electropolished copper, and diamond-machined copper cathodes lead to different kinds of breakdown events. By studying DC voltage breakdown we hope to learn more details about the processes involved in the transition from field emission to catastrophic arcing and the cratering of the surface; as well as learning how to prevent breakdown, we would like to learn how to cause breakdown, which could be important when ''processing'' cavities to reduce field emission. (author)

  17. Effect of High Solenoidal Magnetic Fields on Breakdown Voltages of High Vacuum 805 MHz Cavities

    CERN Document Server

    Moretti, A; Geer, S; Qian, Z

    2004-01-01

    The demonstration of muon ionization cooling by a large factor is necessary to demonstrate the feasilibility of a collider or neutrino factory. An important cooling experiment, MICE [1], has been proposed to demonstrate 10 % cooling which will validate the technology. Ionization cooling is accomplished by passing a high-emittance beam in a multi-Tesla solenoidal channel alternately through regions of low Z material and very high accelerating RF Cavities. To determine the effect of very large solenoidal magnetic fields on the generations of Dark current, X-Rays and breakdown Voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station, and a large bore 5 T solenoidal superconducting magnet containing a pill box type Cavity with thin removable window apertures allowing dark current studies and breakdown studies of different materials. The results of this study will be presented. The study has shown that the peak achievab...

  18. Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

    International Nuclear Information System (INIS)

    Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.

    2005-01-01

    There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity

  19. The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM

    Science.gov (United States)

    Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias

    2018-02-01

    A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.

  20. Energy dissipation on ion-accelerator grids during high-voltage breakdown

    International Nuclear Information System (INIS)

    Menon, M.M.; Ponte, N.S.

    1981-01-01

    The effects of stored energy in the system capacitance across the accelerator grids during high voltage vacuum breakdown are examined. Measurements were made of the current flow and the energy deposition on the grids during breakdown. It is shown that only a portion (less than or equal to 40 J) of the total stored energy (congruent to 100 J) is actually dissipated on the grids. Most of the energy is released during the formation phase of the vacuum arc and is deposited primarily on the most positive grid. Certain abnormal situations led to energy depositions of about 200 J on the grid, but the ion accelerator endured them without exhibiting any deterioration in performance

  1. Increasing break-down strength of the support colomn of high-voltage accelerators

    International Nuclear Information System (INIS)

    Rezvykh, K.A.; Romanov, V.A.

    1981-01-01

    Calculation results of strength of electric field of the EG-2.5 electrostatic accelerator for the support colomn with electrodes of circular and elliptical transverse cross sections are presented. Conducted is the choice of constructing the column under the condition that the dimensions of the tank, high-voltage electrode, step between the sections and internal diameter of the colomn electrodes are not changed. The potential at the high-voltage electrode equals 2.5 MV while the average longitudinal gradient of the colomn field equals 1.25 MV/m. The support insulation colomn of the high-voltage accelerator screened by rings with transverse cross section in the form of orientation oval in some accelerators promotes obtaining higher operating voltage and at the same time increase of operation reliability at the rest unchanged dimensions of the plant because the probability of break-down between the support colomn and the tank wall decreases. The latter is especially significant for most high-energy accelerators as well as for accelerators used in national economy [ru

  2. A consistent approach to estimate the breakdown voltage of high voltage electrodes under positive switching impulses

    Science.gov (United States)

    Arevalo, L.; Wu, D.; Jacobson, B.

    2013-08-01

    The main propose of this paper is to present a physical model of long air gap electrical discharges under positive switching impulses. The development and progression of discharges in long air gaps are attributable to two intertwined physical phenomena, namely, the leader channel and the streamer zone. Experimental studies have been used to develop empirical and physical models capable to represent the streamer zone and the leader channel. The empirical ones have led to improvements in the electrical design of high voltage apparatus and insulation distances, but they cannot take into account factors associated with fundamental physics and/or the behavior of materials. The physical models have been used to describe and understand the discharge phenomena of laboratory and lightning discharges. However, because of the complex simulations necessary to reproduce real cases, they are not in widespread use in the engineering of practical applications. Hence, the aim of the work presented here is to develop a model based on physics of the discharge capable to validate and complement the existing engineering models. The model presented here proposes a new geometrical approximation for the representation of the streamer and the calculation of the accumulated electrical charge. The model considers a variable streamer region that changes with the temporal and spatial variations of the electric field. The leader channel is modeled using the non local thermo-equilibrium equations. Furthermore, statistical delays before the inception of the first corona, and random distributions to represent the tortuous nature of the path taken by the leader channel were included based on the behavior observed in experimental tests, with the intention of ensuring the discharge behaved in a realistic manner. For comparison purposes, two different gap configurations were simulated. A reasonable agreement was found between the physical model and the experimental test results.

  3. Cable Insulation Breakdowns in the Modulator with a Switch Mode High Voltage Power Supply

    CERN Document Server

    Cours, A

    2004-01-01

    The Advanced Photon Source modulators are PFN-type pulsers with 40 kV switch mode charging power supplies (PSs). The PS and the PFN are connected to each other by 18 feet of high-voltage (HV) cable. Another HV cable connects two separate parts of the PFN. The cables are standard 75 kV x-ray cables. All four cable connectors were designed by the PS manufacturer. Both cables were operating at the same voltage level (about 35 kV). The PS’s output connector has never failed during five years of operation. One of the other three connectors failed approximately five times more often than the others. In order to resolve the failure problem, a transient analysis was performed for all connectors. It was found that transient voltage in the connector that failed most often was subjected to more high-frequency, high-amplitude AC components than the other three connectors. It was thought that these components caused partial discharge in the connector insulation and led to the insulation breakdown. Modification o...

  4. A new SOI high-voltage device with a step-thickness drift region and its analytical model for the electric field and breakdown voltage

    International Nuclear Information System (INIS)

    Luo Xiaorong; Zhang Wei; Zhang Bo; Li Zhaoji; Yang Shouguo; Zhan Zhan; Fu Daping

    2008-01-01

    A new SOI high-voltage device with a step-thickness drift region (ST SOI) and its analytical model for the two-dimension electric field distribution and the breakdown voltage are proposed. The electric field in the drift region is modulated and that of the buried layer is enhanced by the variable thickness SOI layer, thereby resulting in the enhancement of the breakdown voltage. Based on the Poisson equation, the expression for the two-dimension electric field distribution is presented taking the modulation effect into account, from which the RESURF (REduced SURface Field) condition and the approximate but explicit expression for the maximal breakdown voltage are derived. The analytical model can explain the effects of the device parameters, such as the step height and the step length of the SOI layer, the doping concentration and the buried oxide thickness, on the electric field distribution and the breakdown voltage. The validity of this model is demonstrated by a comparison with numerical simulations. Improvement on both the breakdown voltage and the on-resistance (R on ) for the ST SOI is obtained due to the variable thickness SOI layer

  5. Effect of gate length on breakdown voltage in AlGaN/GaN high-electron-mobility transistor

    International Nuclear Information System (INIS)

    Luo Jun; Zhao Sheng-Lei; Mi Min-Han; Zhang Jin-Cheng; Ma Xiao-Hua; Hao Yue; Chen Wei-Wei; Hou Bin

    2016-01-01

    The effects of gate length L G on breakdown voltage V BR are investigated in AlGaN/GaN high-electron-mobility transistors (HEMTs) with L G = 1 μm∼ 20 μm. With the increase of L G , V BR is first increased, and then saturated at L G = 3 μm. For the HEMT with L G = 1 μm, breakdown voltage V BR is 117 V, and it can be enhanced to 148 V for the HEMT with L G = 3 μm. The gate length of 3 μm can alleviate the buffer-leakage-induced impact ionization compared with the gate length of 1 μm, and the suppression of the impact ionization is the reason for improving the breakdown voltage. A similar suppression of the impact ionization exists in the HEMTs with L G > 3 μm. As a result, there is no obvious difference in breakdown voltage among the HEMTs with L G = 3 μm∼20 μm, and their breakdown voltages are in a range of 140 V–156 V. (paper)

  6. The Studies of a Vacuum Gap Breakdown after High-Current Arc Interruption with Increasing the Voltage

    Science.gov (United States)

    Schneider, A. V.; Popov, S. A.; Batrakov, A. V.; Dubrovskaya, E. L.; Lavrinovich, V. A.

    2017-12-01

    Vacuum-gap breakdown has been studied after high-current arc interruption with a subsequent increase in the transient recovery voltage across a gap. The effects of factors, such as the rate of the rise in the transient voltage, the potential of the shield that surrounds a discharge gap, and the arc burning time, have been determined. It has been revealed that opening the contacts earlier leads to the formation of an anode spot, which is the source of electrode material vapors into the discharge gap after current zero moment. Under the conditions of increasing voltage, this fact results in the breakdown. Too late opening leads to the breakdown of a short gap due to the high electric fields.

  7. A low knee voltage and high breakdown voltage of 4H-SiC TSBS employing poly-Si/Ni Schottky scheme

    Science.gov (United States)

    Kim, Dong Young; Seok, Ogyun; Park, Himchan; Bahng, Wook; Kim, Hyoung Woo; Park, Ki Cheol

    2018-02-01

    We report a low knee voltage and high breakdown voltage 4H-SiC TSBS employing poly-Si/Ni dual Schottky contacts. A knee voltage was significantly improved from 0.75 to 0.48 V by utilizing an alternative low work-function material of poly-Si as an anode electrode. Also, reverse breakdown voltage was successfully improved from 901 to 1154 V due to a shrunk low-work-function Schottky region by a proposed self-align etching process between poly-Si and SiC. SiC TSBS with poly-Si/Ni dual Schottky scheme is a suitable structure for high-efficiency rectification and high-voltage blocking operation.

  8. A new protection system against high voltage vacuum breakdowns developed for the Tore Supra neutral beam injector prototype

    International Nuclear Information System (INIS)

    Fumelli, M.; Jequier, F.; Pamela, J.

    1988-01-01

    A passive protection system against high voltage vacuum breakdowns has been developed. This system is based on the principle of oscillatory discharges in an RLC circuit coupled with the use of a diode. It allows the interruption of a vacuum breakdown in a few milliseconds. This study has been made for protecting some parts of the neutral beam injectors of the Tore Supra Tokamak experiment, but its field of application should be quite large. The conception of the whole high voltage electrical circuit developed for the Tore Supra injector prototype experiments is also presented

  9. Design of High Voltage Electrical Breakdown Strength measuring system at 1.8K with a G-M cryocooler

    Science.gov (United States)

    Li, Jian; Huang, Rongjin; Li, Xu; Xu, Dong; Liu, Huiming; Li, Laifeng

    2017-09-01

    Impregnating resins as electrical insulation materials for use in ITER magnets and feeder system are required to be radiation stable, good mechanical performance and high voltage electrical breakdown strength. In present ITER project, the breakdown strength need over 30 kV/mm, for future DEMO reactor, it will be greater than this value. In order to develop good property insulation materials to satisfy the requirements of future fusion reactor, high voltage breakdown strength measurement system at low temperature is necessary. In this paper, we will introduce our work on the design of this system. This measuring system has two parts: one is an electrical supply system which provides the high voltage from a high voltage power between two electrodes; the other is a cooling system which consists of a G-M cryocooler, a superfluid chamber and a heat switch. The two stage G-M cryocooler pre-cool down the system to 4K, the superfluid helium pot is used for a container to depress the helium to superfluid helium which cool down the sample to 1.8K and a mechanical heat switch connect or disconnect the cryocooler and the pot. In order to provide the sufficient time for the test, the cooling system is designed to keep the sample at 1.8K for 300 seconds.

  10. Investigation of High Voltage Breakdown and Arc Localization in RF Structures

    International Nuclear Information System (INIS)

    Bigelow, T.S.; Goulding, R.H.; Swain, D.W.

    1999-01-01

    An effort is underway to improve the voltage standoff capabilities of ion cyclotron range of frequencies (ICRF) heating and current drive systems. One approach is to develop techniques for determining the location of an electrical breakdown (arc) when it occurs. A technique is described which uses a measurement of the reflection coefficient of a swept frequency signal to determine the arc location. The technique has several advantages including a requirement for only a small number of sensors and very simple data interpretation. In addition a test stand is described which will be used for studies of rf arc behavior. The device uses a quarter-wave resonator to produce voltages to 90 kV in the frequency range of 55-80 MHz

  11. Dispersion of breakdown voltage of liquid helium

    International Nuclear Information System (INIS)

    Ishii, Itaru; Noguchi, Takuya

    1978-01-01

    As for the electrical insulation characteristics of liquid helium, the discrepancy among the measured values by each person is very large even in the fundamental DC breakdown voltage in uniform electric field. The dispersion of experimental values obtained in the experiments by the same person is also large. Hereafter, the difference among the mean values obtained by each experimenter will be referred to as ''deviation of mean values'', and the dispersion of measured values around the mean value obtained by the same person as ''deviation around the man value''. The authors have mainly investigated on the latter experimentally. The cryostat was made of stainless steel, and the innermost helium chamber was of 500 mm I.D. and approximately 1200 mm deep. The high voltage electrode was of brass sphere of 25 mm diameter, and the low voltage electrode was of brass plate. The experiment was conducted for liquid helium boiling at 4.2 K and 1 atm, and the breakdown voltage and time lag were measured by applying the approximately square wave impulses of fast rise and long tail, ramp and DC voltages. The cause of the deviation of mean values may be the presence of impurity particles or the effect of electrode shape. As for the deviation around the mean value, the dispersion is large, and its standard deviation may amount to 10 to 20% of the man value. The dispersion is not due to the statistical time lag, but is due to parameters that vary with breakdown. (Wakatsuki, Y.)

  12. High-Voltage Breakdown Penalties for the Beam-Breakup Instability

    International Nuclear Information System (INIS)

    Ekdahl, Carl August

    2016-01-01

    The strength of the dangerous beam breakup (BBU) instability in linear induction accelerators (LIAs) is determined by the transverse coupling impedance Z_⊥ of the induction cell cavity. For accelerating gap width w less than the beam pipe radius b, the transverse impedance is theoretically proportional to w/b, favoring narrow gaps to suppress BBU. On the other hand, cells with narrow gaps cannot support high accelerating gradients, because of electrical breakdown and shorting of the gap. Thus, there is an engineering trade-off between BBU growth and accelerating gradient, which must be considered for next generation LIAs now being designed. In this article this tradeoff is explored, using a simple pillbox cavity as an illustrative example. For this model, widening the gap to reduce the probability of breakdown increases BBU growth, unless higher magnetic focusing fields are used to further suppress the instability.

  13. Optimization design on breakdown voltage of AlGaN/GaN high-electron mobility transistor

    Science.gov (United States)

    Yang, Liu; Changchun, Chai; Chunlei, Shi; Qingyang, Fan; Yuqian, Liu

    2016-12-01

    Simulations are carried out to explore the possibility of achieving high breakdown voltage of GaN HEMT (high-electron mobility transistor). GaN cap layers with gradual increase in the doping concentration from 2 × 1016 to 5 × 1019 cm-3 of N-type and P-type cap are investigated, respectively. Simulation results show that HEMT with P-doped GaN cap layer shows more potential to achieve higher breakdown voltage than N-doped GaN cap layer under the same doping concentration. This is because the ionized net negative space charges in P-GaN cap layer could modulate the surface electric field which makes more contribution to RESURF effect. Furthermore, a novel GaN/AlGaN/GaN HEMT with P-doped GaN buried layer in GaN buffer between gate and drain electrode is proposed. It shows enhanced performance. The breakdown voltage of the proposed structure is 640 V which is increased by 12% in comparison to UID (un-intentionally doped) GaN/AlGaN/GaN HEMT. We calculated and analyzed the distribution of electrons' density. It is found that the depleted region is wider and electric field maximum value is induced at the left edge of buried layer. So the novel structure with P-doped GaN buried layer embedded in GaN buffer has the better improving characteristics of the power devices. Project supported by the National Basic Research Program of China (No. 2014CB339900) and the Open Fund of Key Laboratory of Complex Electromagnetic Environment Science and Technology, China Academy of Engineering Physics (No. 2015-0214.XY.K).

  14. High breakdown voltage in AlGaN/GaN HEMTs using AlGaN/GaN/AlGaN quantum-well electron-blocking layers.

    Science.gov (United States)

    Lee, Ya-Ju; Yao, Yung-Chi; Huang, Chun-Ying; Lin, Tai-Yuan; Cheng, Li-Lien; Liu, Ching-Yun; Wang, Mei-Tan; Hwang, Jung-Min

    2014-01-01

    In this paper, we numerically study an enhancement of breakdown voltage in AlGaN/GaN high-electron-mobility transistors (HEMTs) by using the AlGaN/GaN/AlGaN quantum-well (QW) electron-blocking layer (EBL) structure. This concept is based on the superior confinement of two-dimensional electron gases (2-DEGs) provided by the QW EBL, resulting in a significant improvement of breakdown voltage and a remarkable suppression of spilling electrons. The electron mobility of 2-DEG is hence enhanced as well. The dependence of thickness and composition of QW EBL on the device breakdown is also evaluated and discussed.

  15. Heterojunction p-Cu2O/n-Ga2O3 diode with high breakdown voltage

    Science.gov (United States)

    Watahiki, Tatsuro; Yuda, Yohei; Furukawa, Akihiko; Yamamuka, Mikio; Takiguchi, Yuki; Miyajima, Shinsuke

    2017-11-01

    Heterojunction p-Cu2O/n-β-Ga2O3 diodes were fabricated on an epitaxially grown β-Ga2O3(001) layer. The reverse breakdown voltage of these p-n diodes reached 1.49 kV with a specific on-resistance of 8.2 mΩ cm2. The leakage current of the p-n diodes was lower than that of the Schottky barrier diode due to the higher barrier height against the electron. The ideality factor of the p-n diode was 1.31. It indicated that some portion of the recombination current at the interface contributed to the forward current, but the diffusion current was the dominant. The forward current more than 100 A/cm2 indicated the lower conduction band offset at the hetero-interface between Cu2O and Ga2O3 layers than that predicted from the bulk properties, resulting in such a high forward current without limitation. These results open the possibility of advanced device structures for wide bandgap Ga2O3 to achieve higher breakdown voltage and lower on-resistance.

  16. Source-Drain Punch-Through Analysis of High Voltage Off-State AlGaN/GaN HEMT Breakdown

    Science.gov (United States)

    Jiang, H.; Li, X.; Wang, J.; Zhu, L.; Wang, H.; Liu, J.; Wang, M.; Yu, M.; Wu, W.; Zhou, Y.; Dai, G.

    2017-06-01

    AlGaN/GaN high-electron mobility transistor’s (HEMT’s) off-state breakdown is investigated using conventional three-terminal off-state breakdown I-V measurement. Competition between gate leakage and source-injection buffer leakage (SIBL) is discussed in detail. It is found that the breakdown is dominated by source-injection which is sensitive to gate voltage and gate length at large gate-to-drain spacing (Lgd > 7μm), where a threshold drain voltage of the occurrence of the SIBL current in GaN buffer exists, and after this threshold voltage the SIBL current continually increased till the buffer breakdown. Our analysis showed that due to the punch-through effect in the buffer, a potential barrier between 2DEG and GaN buffer at the source side mainly controlled by the drain voltage determines the buffer leakage current and the occurrence of the following buffer breakdown, which could explain the experimentally observed breakdown phenomenon.

  17. Substrate-bias effect on the breakdown characteristic in a new silicon high-voltage device structure

    International Nuclear Information System (INIS)

    Li Qi; Wang Weidong; Zhao Qiuming; Wei Xueming

    2012-01-01

    A novel silicon double-RESURF LDMOS structure with an improved breakdown characteristic by substrate bias technology (SB) is reported. The P-type epitaxial layer is embedded between an N-type drift region and an N-type substrate to block the conduction path in the off-state and change the distributions of the bulk electric field. The substrate bias strengthens the charge share effect of the drift region near the source, and the vertical electric field peak under the drain is decreased, which is especially helpful in improving the vertical breakdown voltage in a lateral power device with a thin drift region. The numerical results by MEDICI indicate that the breakdown voltage of the proposed device is increased by 97% compared with a conventional LDMOS, while maintaining a lowon-resistance. (semiconductor devices)

  18. Voltage-stabilised elastomers with increased relative permittivity and high electrical breakdown strength by means of phase separating binary copolymer blends of silicone elastomers

    DEFF Research Database (Denmark)

    A Razak, Aliff Hisyam; Yu, Liyun; Skov, Anne Ladegaard

    2017-01-01

    Increased electrical breakdown strength and increased dielectric permittivity of silicone-based dielectric elastomers are achieved by means of the addition of so-called voltage-stabilisers prepared from PDMS–PPMS copolymers as well as PDMS–PEG copolymers in order to compensate for the negative...... effect of softness on electrical stability of silicone elastomers. The voltage-stabilised elastomer, incorporating a high-permittivity PDMS–PEG copolymer, possesses increased relative permittivity, high electrical breakdown strength, excellent network integrity and low dielectric loss and paves the way...

  19. High breakdown voltage quasi-two-dimensional β-Ga2O3 field-effect transistors with a boron nitride field plate

    Science.gov (United States)

    Bae, Jinho; Kim, Hyoung Woo; Kang, In Ho; Yang, Gwangseok; Kim, Jihyun

    2018-03-01

    We have demonstrated a β-Ga2O3 metal-semiconductor field-effect transistor (MESFET) with a high off-state breakdown voltage (344 V), based on a quasi-two-dimensional β-Ga2O3 field-plated with hexagonal boron nitride (h-BN). Both the β-Ga2O3 and h-BN were mechanically exfoliated from their respective crystal substrates, followed by dry-transfer onto a SiO2/Si substrate for integration into a high breakdown voltage quasi-two-dimensional β-Ga2O3 MESFETs. N-type conducting behavior was observed in the fabricated β-Ga2O3 MESFETs, along with a high on/off current ratio (>106) and excellent current saturation. A three-terminal off-state breakdown voltage of 344 V was obtained, with a threshold voltage of -7.3 V and a subthreshold swing of 84.6 mV/dec. The distribution of electric fields in the quasi-two-dimensional β-Ga2O3 MESFETs was simulated to analyze the role of the dielectric h-BN field plate in improving the off-state breakdown voltage. The stability of the field-plated β-Ga2O3 MESFET in air was confirmed after storing the MESFET in ambient air for one month. Our results pave the way for unlocking the full potential of β-Ga2O3 for use in a high-power nano-device with an ultrahigh breakdown voltage.

  20. Technological Aspects: High Voltage

    International Nuclear Information System (INIS)

    Faircloth, D C

    2013-01-01

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered. (author)

  1. Technological Aspects: High Voltage

    CERN Document Server

    Faircloth, D.C.

    2013-12-16

    This paper covers the theory and technological aspects of high-voltage design for ion sources. Electric field strengths are critical to understanding high-voltage breakdown. The equations governing electric fields and the techniques to solve them are discussed. The fundamental physics of high-voltage breakdown and electrical discharges are outlined. Different types of electrical discharges are catalogued and their behaviour in environments ranging from air to vacuum are detailed. The importance of surfaces is discussed. The principles of designing electrodes and insulators are introduced. The use of high-voltage platforms and their relation to system design are discussed. The use of commercially available high-voltage technology such as connectors, feedthroughs and cables are considered. Different power supply technologies and their procurement are briefly outlined. High-voltage safety, electric shocks and system design rules are covered.

  2. Novel Voltage limiting concept for avalance breakdown protection

    NARCIS (Netherlands)

    Ruijs, L.C.H.; Bezooijen, van A.; Mahmoudi, R.; Roermund, van A.H.M.

    2006-01-01

    Destructive over-voltage breakdown of cellular phone power transistors is prevented by using a new voltage-limiting concept. The output voltage is detected by an avalanche-based detector, and limited by decreasing the output power when needed. The voltage detector contains a low voltage bipolar NPN

  3. High voltage engineering fundamentals

    CERN Document Server

    Kuffel, E; Hammond, P

    1984-01-01

    Provides a comprehensive treatment of high voltage engineering fundamentals at the introductory and intermediate levels. It covers: techniques used for generation and measurement of high direct, alternating and surge voltages for general application in industrial testing and selected special examples found in basic research; analytical and numerical calculation of electrostatic fields in simple practical insulation system; basic ionisation and decay processes in gases and breakdown mechanisms of gaseous, liquid and solid dielectrics; partial discharges and modern discharge detectors; and over

  4. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, April 1--September 30, 1977

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L. G.; James, D. R.; Pai, R. Y.; Mathis, R. A.; Pace, M. O.; Bouldin, D. W.; Christodoulides, A. A.; Chan, C. C.

    1977-11-01

    Direct current breakdown strength measurements on a large number of multicomponent gas mixtures at low (approximately less than 1 atm) and high (approximately less than 5 atm) pressures led to the discovery of many gas mixtures of electron-attaching gases and strongly electron-attaching gases with N/sub 2/ and C/sub 3/F/sub 8/ which are superior to SF/sub 6/. Of special significance are mixtures containing C/sub 4/F/sub 6/ (perfluoro-2-butyne). The breakdown strength of one such mixture (20 percent C/sub 4/F/sub 6/ to 80 percent SF/sub 6/) is approximately 30 percent higher than pure SF/sub 6/ under identical conditions, both at low (approximately 0.7 atm) and high (4.6 atm) pressures. Perfluorocyclohexene (C/sub 6/F/sub 10/) and C/sub 5/F/sub 8/ (perfluorocyclopentene) were found at low pressure (approximately 0.2 atm) to be, respectively, approximately 2.1 and 2.2 times better than SF/sub 6/ under comparable conditions; they both have a potential as additives in gas mixtures. The effect of the inelastic electron scattering properties of a gas via negative ion resonances in the low-energy range (1 to approximately 4 eV) on the breakdown strength has been demonstrated for H/sub 2/, N/sub 2/, and CO and binary mixtures of these with SF/sub 6/ and C/sub 4/F/sub 6/ (perfluoro-2-butyne). The construction of a new high pressure (to approximately 11 atm), variable temperature (-50/sup 0/C to + 150/sup 0/C) apparatus has been completed and a practical test facility utilizing cylindrical electrode geometries has been put into operation; the first results on the latter apparatus were on SF/sub 6/-N/sub 2/ and c-C/sub 4/F/sub 8/--N/sub 2/ mixtures. Studies of environmental effects of dielectric gases via their electron-impact-induced decompositions and analysis of their breakdown products have begun using mass spectrometry and gas chromatography; C/sub 4/F/sub 6/ (perfluoro-2-butyne) seems to be resistant to electron-impact-induced decomposition indicating long

  5. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, October 1, 1977--March 31, 1978

    International Nuclear Information System (INIS)

    Christophorou, L.G.; James, D.R.; Pai, R.Y.; Mathis, R.A.; Sauers, I.; Pace, M.O.; Bouldin, D.W.; Christodoulides, A.A.; Chan, C.C.

    1978-06-01

    The work on gas mixtures is focused on combinations of gases consisting of strongly electron-attaching components and one or more electron slowing-down components. Hypotheses based on the positions of electronically excited states are borne out experimentally in the low pressure ( 6 . Although the ionization cross section for Ar is very much greater than that for Ne, Ar is a superior buffer gas. A theoretical discussion is given which describes the relation between the dielectric strength of a gas to its physical parameters including the electron attachment cross section, the ionization cross section, the ionization potential, and the electron energy distribution function. Also discussed is the importance of perfluorination in hydrocarbons to effect an increase in the electron attachment cross section and electron affinity and a decrease in the ionization cross section, and hence an increase in dielectric strength. Attachment rates were measured as a function of the mean electron energy for a comprehensive list of perfluorocarbons. Breakdown voltages were determined for SF 6 and for SF 6 (20%)/N 2 (80%) as a function of temperature from -15 0 C to 85 0 C. Environmental aspects of gas dielectrics pertaining to gas decomposition and toxicity were studied

  6. High voltage research (breakdown strengths of gaseous and liquid insulators). Semiannual report, October 1, 1977--March 31, 1978. [Summaries of research activities at Oak Ridge National Laboratory

    Energy Technology Data Exchange (ETDEWEB)

    Christophorou, L.G.; James, D.R.; Pai, R.Y.; Mathis, R.A.; Sauers, I.; Pace, M.O.; Bouldin, D.W.; Christodoulides, A.A.; Chan, C.C.

    1978-06-01

    The work on gas mixtures is focused on combinations of gases consisting of strongly electron-attaching components and one or more electron slowing-down components. Hypotheses based on the positions of electronically excited states are borne out experimentally in the low pressure (<1000 torr) breakdown measurements. The high pressure work shows dramatically the importance of the electron scattering cross section on breakdown strength by comparing Ar with Ne as single gases and in mixtures with SF/sub 6/. Although the ionization cross section for Ar is very much greater than that for Ne, Ar is a superior buffer gas. A theoretical discussion is given which describes the relation between the dielectric strength of a gas to its physical parameters including the electron attachment cross section, the ionization cross section, the ionization potential, and the electron energy distribution function. Also discussed is the importance of perfluorination in hydrocarbons to effect an increase in the electron attachment cross section and electron affinity and a decrease in the ionization cross section, and hence an increase in dielectric strength. Attachment rates were measured as a function of the mean electron energy for a comprehensive list of perfluorocarbons. Breakdown voltages were determined for SF/sub 6/ and for SF/sub 6/ (20%)/N/sub 2/(80%) as a function of temperature from -15/sup 0/C to 85/sup 0/C. Environmental aspects of gas dielectrics pertaining to gas decomposition and toxicity were studied.

  7. The effect of external visible light on the breakdown voltage of a long discharge tube

    Science.gov (United States)

    Shishpanov, A. I.; Ionikh, Yu. Z.; Meshchanov, A. V.

    2016-06-01

    The breakdown characteristics of a discharge tube with a configuration typical of gas-discharge light sources and electric-discharge lasers (a so-called "long discharge tube") filled with argon or helium at a pressure of 1 Torr have been investigated. A breakdown has been implemented using positive and negative voltage pulses with a linear leading edge having a slope dU/ dt ~ 10-107 V/s. Visible light from an external source (halogen incandescent lamp) is found to affect the breakdown characteristics. The dependences of the dynamic breakdown voltage of the tube on dU/ dt and on the incident light intensity are measured. The breakdown voltage is found to decrease under irradiation of the high-voltage anode of the tube in a wide range of dU/ dt. A dependence of the effect magnitude on the light intensity and spectrum is obtained. Possible physical mechanisms of this phenomenon are discussed.

  8. Current–voltage characteristics of high-voltage 4H-SiC p{sup +}–n{sub 0}–n{sup +} diodes in the avalanche breakdown mode

    Energy Technology Data Exchange (ETDEWEB)

    Ivanov, P. A., E-mail: Pavel.Ivanov@mail.ioffe.ru; Potapov, A. S.; Samsonova, T. P.; Grekhov, I. V. [Ioffe Physical–Technical Institute (Russian Federation)

    2017-03-15

    p{sup +}–n{sub 0}–n{sup +} 4H-SiC diodes with homogeneous avalanche breakdown at 1860 V are fabricated. The pulse current–voltage characteristics are measured in the avalanche-breakdown mode up to a current density of 4000 A/cm{sup 2}. It is shown that the avalanche-breakdown voltage increases with increasing temperature. The following diode parameters are determined: the avalanche resistance (8.6 × 10{sup –2} Ω cm{sup 2}), the electron drift velocity in the n{sub 0} base at electric fields higher than 10{sup 6} V/cm (7.8 × 10{sup 6} cm/s), and the relative temperature coefficient of the breakdown voltage (2.1 × 10{sup –4} K{sup –1}).

  9. Demonstration of InAlN/AlGaN high electron mobility transistors with an enhanced breakdown voltage by pulsed metal organic chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Xue, JunShuai, E-mail: junshuaixue@hotmail.com; Zhang, JinCheng; Hao, Yue [Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi' an 710071 (China)

    2016-01-04

    In this work, InAlN/AlGaN heterostructures employing wider bandgap AlGaN instead of conventional GaN channel were grown on sapphire substrate by pulsed metal organic chemical vapor deposition, where the nominal Al composition in InAlN barrier and AlGaN channel were chosen to be 83% and 5%, respectively, to achieve close lattice-matched condition. An electron mobility of 511 cm{sup 2}/V s along with a sheet carrier density of 1.88 × 10{sup 13 }cm{sup −2} were revealed in the prepared heterostructures, both of which were lower compared with lattice-matched InAlN/GaN due to increased intrinsic alloy disorder scattering resulting from AlGaN channel and compressively piezoelectric polarization in barrier, respectively. While the high electron mobility transistor (HEMT) processed on these structures not only exhibited a sufficiently high drain output current density of 854 mA/mm but also demonstrated a significantly enhanced breakdown voltage of 87 V, which is twice higher than that of reported InAlN/GaN HEMT with the same device dimension, potential characteristics for high-voltage operation of GaN-based electronic devices.

  10. New method for determining avalanche breakdown voltage of silicon photomultipliers

    International Nuclear Information System (INIS)

    Chirikov-Zorin, I.

    2017-01-01

    The avalanche breakdown and Geiger mode of the silicon p-n junction is considered. A precise physically motivated method is proposed for determining the avalanche breakdown voltage of silicon photomultipliers (SiPM). The method is based on measuring the dependence of the relative photon detection efficiency (PDE rel ) on the bias voltage when one type of carriers (electron or hole) is injected into the avalanche multiplication zone of the p-n junction. The injection of electrons or holes from the base region of the SiPM semiconductor structure is performed using short-wave or long-wave light. At a low overvoltage (1-2 V) the detection efficiency is linearly dependent on the bias voltage; therefore, extrapolation to zero PDE rel value determines the SiPM avalanche breakdown voltage with an accuracy within a few millivolts. [ru

  11. AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Shichuang [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China); Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Fu, Kai, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn; Yu, Guohao; Zhang, Zhili; Song, Liang; Deng, Xuguang; Li, Shuiming; Sun, Qian; Cai, Yong; Zhang, Baoshun [Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Qi, Zhiqiang; Dai, Jiangnan; Chen, Changqing, E-mail: kfu2009@sinano.ac.cn, E-mail: cqchen@mail.hust.edu.cn [Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074 (China)

    2016-01-04

    This letter has studied the performance of AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon substrate with GaN buffer treated by aluminum ion implantation for insulating followed by a channel regrown by metal–organic chemical vapor deposition. For samples with Al ion implantation of multiple energies of 140 keV (dose: 1.4 × 10{sup 14} cm{sup −2}) and 90 keV (dose: 1 × 10{sup 14} cm{sup −2}), the OFF-state leakage current is decreased by more than 3 orders and the breakdown voltage is enhanced by nearly 6 times compared to the samples without Al ion implantation. Besides, little degradation of electrical properties of the 2D electron gas channel is observed where the maximum drain current I{sub DSmax} at a gate voltage of 3 V was 701 mA/mm and the maximum transconductance g{sub mmax} was 83 mS/mm.

  12. Breakdown of highly excited oxygen in a DC electric field

    International Nuclear Information System (INIS)

    Vagin, N.P.; Ionin, A.A.; Klimachev, Yu.M.; Sinitsin, D.V.; Yuryshev, N.N.; Deryugin, A.A.; Kochetov, I.V.; Napartovich, A.P.

    2000-01-01

    The breakdown of oxygen in a dc electric field is studied. A high concentration of oxygen molecules in the a 1 Δ g excited state is obtained in a purely chemical reactor. A decrease in the breakdown voltage at degrees of excitation exceeding 50% is observed. The theoretical decrement in the breakdown voltage obtained by solving the Boltzmann equation is in good agreement with the experimental data

  13. Note: Measuring breakdown characteristics during the hot re-ignition of high intensity discharge lamps using high frequency alternating current voltage.

    Science.gov (United States)

    van den Bos, R A J M; Sobota, A; Manders, F; Kroesen, G M W

    2013-04-01

    To investigate the cold and hot re-ignition properties of High Intensity Discharge (HID) lamps in more detail an automated setup was designed in such a way that HID lamps of various sizes and under different background pressures can be tested. The HID lamps are ignited with a ramped sinusoidal voltage signal with frequencies between 60 and 220 kHz and with amplitude up to 7.5 kV. Some initial results of voltage and current measurements on a commercially available HID lamp during hot and cold re-ignition are presented.

  14. The Significance of Breakdown Voltages for Quality Assurance of Low-Voltage BME Ceramic Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2014-01-01

    Application of thin dielectric, base metal electrode (BME) ceramic capacitors for high-reliability applications requires development of testing procedures that can assure high quality and reliability of the parts. In this work, distributions of breakdown voltages (VBR) in variety of low-voltage BME multilayer ceramic capacitors (MLCCs) have been measured and analyzed. It has been shown that analysis of the distributions can indicate the proportion of defective parts in the lot and significance of the defects. Variations of the distributions after solder dip testing allow for an assessment of the robustness of capacitors to soldering-related stresses. The drawbacks of the existing screening and qualification methods to reveal defects in high-value, low-voltage MLCCs and the importance of VBR measurements are discussed. Analysis has shown that due to a larger concentration of oxygen vacancies, defect-related degradation of the insulation resistance (IR) and failures are more likely in BME compared to the precious metal electrode (PME) capacitors.

  15. Effects of load voltage on voltage breakdown modes of electrical exploding aluminum wires in air

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Jian; Li, Xingwen, E-mail: xwli@mail.xjtu.edu.cn; Yang, Zefeng; Wang, Kun; Chao, Youchuang; Shi, Zongqian; Jia, Shenli; Qiu, Aici [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

    2015-06-15

    The effects of the load voltage on the breakdown modes are investigated in exploding aluminum wires driven by a 1 kA, 0.1 kA/ns pulsed current in air. From laser probing images taken by laser shadowgraphy, schlieren imaging, and interferometry, the position of the shockwave front, the plasma channel, and the wire core edge of the exploding product can be determined. The breakdown mode makes a transition from the internal mode, which involves breakdown inside the wire core, to the shunting mode, which involves breakdown in the compressed air, with decreasing charging voltage. The breakdown electrical field for a gaseous aluminum wire core of nearly solid density is estimated to be more than 20 kV/cm, while the value for gaseous aluminum of approximately 0.2% solid density decreases to 15–20 kV/cm. The breakdown field in shunting mode is less than 20 kV/cm and is strongly affected by the vaporized aluminum, the desorbed gas, and the electrons emitted from the wire core during the current pause. Ohmic heating during voltage collapses will induce further energy deposition in the current channel and thus will result in different expansion speeds for both the wire core and the shockwave front in the different modes.

  16. Investigation of leakage current and breakdown voltage in irradiated double-sided 3D silicon sensors

    International Nuclear Information System (INIS)

    Betta, G.-F. Dalla; Mendicino, R.; Povoli, M.; Sultan, D.M.S.; Ayllon, N.; Hoeferkamp, M.; McDuff, H.; Seidel, S.; Boscardin, M.; Zorzi, N.; Mattiazzo, S.

    2016-01-01

    We report on an experimental study aimed at gaining deeper insight into the leakage current and breakdown voltage of irradiated double-sided 3D silicon sensors from FBK, so as to improve both the design and the fabrication technology for use at future hadron colliders such as the High Luminosity LHC. Several 3D diode samples of different technologies and layout are considered, as well as several irradiations with different particle types. While the leakage current follows the expected linear trend with radiation fluence, the breakdown voltage is found to depend on both the bulk damage and the surface damage, and its values can vary significantly with sensor geometry and process details.

  17. Breakdown Characteristic Analysis of Paper- Oil Insulation under AC and DC Voltage

    Science.gov (United States)

    Anuar, N. F.; Jamail, N. A. M.; Rahman, R. A.; Kamarudin, M. S.

    2017-08-01

    This paper presents the study of breakdown characteristic of Kraft paper insulated with two different types of insulating fluid, which are Palm oil and Coconut oil. Palm oil and Coconut oil are chosen as the alternative fluid to the transformer oil because it has high potential and environmentally-friendly. The Segezha Kraft papers with various thicknesses (65.5 gsm, 75 gsm, 85gsm, 90 gsm) have been used in this research. High Voltage Direct Current (HVDC), High Voltage Alternating Current (HVAC) and carbon track and severity analysis is conducted to observe the sample of aging Kraft paper. These samples have been immersed using Palm oil and Coconut oil up to 90 days to observe the absorption rate. All samples started to reach saturation level at 70 days of immersion. HVDC and HVAC breakdown experiments have been done after the samples had reached the saturation level based on normal condition, immersed in Palm oil and immersed in Coconut oil. All samples immersed in liquid show different breakdown voltage reading compared to normal condition. The analysis of carbon track and severity on surface has been done using Analytical Scanning Electron Microscope (SEM) Analysis. The results of the experiment show that the sample of Kraft paper immersed in Palm oil was better than Coconut oil immersed sample. Therefore the sample condition was the main factor that determines the value of breakdown voltage test. Introduction

  18. High gradient RF breakdown study

    International Nuclear Information System (INIS)

    Laurent, L.; Luhmann, N.C. Jr.; Scheitrum, G.; Hanna, S.; Pearson, C.; Phillips, R.

    1998-01-01

    Stanford Linear Accelerator Center and UC Davis have been investigating high gradient RF breakdown and its effects on pulse shortening in high energy microwave devices. RF breakdown is a critical issue in the development of high power microwave sources and next generation linear accelerators since it limits the output power of microwave sources and the accelerating gradient of linacs. The motivation of this research is to find methods to increase the breakdown threshold level in X-band structures by reducing dark current. Emphasis is focused on improved materials, surface finish, and cleanliness. The test platform for this research is a traveling wave resonant ring. A 30 MW klystron is employed to provide up to 300 MW of traveling wave power in the ring to trigger breakdown in the cavity. Five TM 01 cavities have previously been tested, each with a different combination of surface polish and/or coating. The onset of breakdown was extended up to 250 MV/m with a TiN surface finish, as compared to 210 MV/m for uncoated OFE copper. Although the TiN coating was helpful in depressing the field emission, the lowest dark current was obtained with a 1 microinch surface finish, single-point diamond-turned cavity

  19. High voltage systems

    International Nuclear Information System (INIS)

    Martin, M.

    1991-01-01

    Industrial processes usually require electrical power. This power is used to drive motors, to heat materials, or in electrochemical processes. Often the power requirements of a plant require the electric power to be delivered at high voltage. In this paper high voltage is considered any voltage over 600 V. This voltage could be as high as 138,000 V for some very large facilities. The characteristics of this voltage and the enormous amounts of power being transmitted necessitate special safety considerations. Safety must be considered during the four activities associated with a high voltage electrical system. These activities are: Design; Installation; Operation; and Maintenance

  20. Mason’s equation application for prediction of voltage of oil shale treeing breakdown

    Science.gov (United States)

    Martemyanov, S. M.

    2017-05-01

    The application of the formula, which is used to calculate the maximum field at the tip of the pin-plane electrode system was proposed to describe the process of electrical treeing and treeing breakdown in an oil shale. An analytical expression for the calculation of the treeing breakdown voltage in the oil shale, as a function of the inter-electrode distance, was taken. A high accuracy of the correspondence of the model to the experimental data in the range of inter-electrode distances from 0.03 to 0.5 m was taken.

  1. Influence of water trees on breakdown voltage of polymeric cables insulations

    Energy Technology Data Exchange (ETDEWEB)

    Stancu, Cristina [INCDIE ICPE CA, Bucharest (Romania); Notingher, Petru V.; Plopeanu, Mihai Gabriel [Politehnica University of Bucharest, Bucharest (Romania)

    2011-07-01

    In a previous paper was shown that water trees development modifies considerably the electric field repartition, which increases significantly in the vicinity of treed areas. In order to find the water trees influence on the breakdown voltage, in the present paper, an experimental study on model cables insulated with low density polyethylene is done. In insulation samples, water trees with various dimensions and densities were developed. For the reduction of the test duration, an electric field with a higher frequency (3-5 kHz) was used. For breakdown voltage measurement an automatic setup was realized. For each value of the ageing time the dimensions and densities of water trees and breakdown voltage were measured and the dependency of the breakdown voltage with these quantities were analysed. The results show a significant reduction of the breakdown voltage of treed cables insulations compared to un-treed ones. Key words: polyethylene, water treeing, electric field, breakdown, power cables.

  2. Comparative Study of Breakdown Voltage of Mineral, Synthetic and Natural Oils and Based Mineral Oil Mixtures under AC and DC Voltages

    Directory of Open Access Journals (Sweden)

    Abderrahmane Beroual

    2017-04-01

    Full Text Available This paper deals with a comparative study of AC and DC breakdown voltages of based mineral oil mixtures with natural and synthetic esters mainly used in high voltage power transformers. The goal was to analyze the performances of oil mixtures from the dielectric withstand point of view and to predict the behavior of transformers originally filled with mineral oil and re-filled with synthetic or natural ester oils when emptied for maintenance. The study concerns mixtures based on 20%, 50%, and 80% of natural and synthetic ester oils. AC breakdown voltages were measured using a sphere-sphere electrode system according to IEC 60156 specifications; the same specification was adopted for DC measurements since there is no standard specifications for this voltage waveform. A statistical analysis of the mean values, standard deviations, and histograms of breakdown voltage data was carried out. The Normal and Weibull distribution functions were used to analyze the experimental data and the best function that the data followed was used to estimate the breakdown voltage with risk of 1%, 10%, and 50% probability. It was shown that whatever the applied voltage waveforms, ester oils always have a significantly higher breakdown voltage than mineral oil. The addition of only 20% of natural or synthetic ester oil was sufficient to considerably increase the breakdown voltage of mineral oil. The dielectric strength of such a mixture is much higher than that of mineral oil alone and can reach that of ester oils. From the point of view of dielectric strength, the mixtures constitute an option for improving the performance of mineral oil. Thus, re-filling of transformers containing up to 20% mineral oil residues with ester oils, does not present any problem; it is even advantageous when considering only the breakdown voltage. Under AC, the mixtures with natural ester always follow the behavior of vegetable oil alone. With the exception of the 20% mixture of natural

  3. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    Energy Technology Data Exchange (ETDEWEB)

    Xin, Qian; Yan, Linlong; Luo, Yi [School of Physics, Shandong University, Jinan 250100 (China); Song, Aimin, E-mail: A.Song@manchester.ac.uk [School of Physics, Shandong University, Jinan 250100 (China); School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL (United Kingdom)

    2015-03-16

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate.

  4. Study of breakdown voltage of indium-gallium-zinc-oxide-based Schottky diode

    International Nuclear Information System (INIS)

    Xin, Qian; Yan, Linlong; Luo, Yi; Song, Aimin

    2015-01-01

    In contrast to the intensive studies on thin-film transistors based on indium gallium zinc oxide (IGZO), the research on IGZO-based diodes is still very limited, particularly on their behavior and stability under high bias voltages. Our experiments reveal a sensitive dependence of the breakdown voltage of IGZO Schottky diodes on the anode metal and the IGZO film thickness. Devices with an Au anode are found to breakdown easily at a reverse bias as low as −2.5 V, while the devices with a Pd anode and a 200-nm, fully depleted IGZO layer have survived up to −15 V. All diodes are fabricated by radio-frequency magnetron sputtering at room temperature without any thermal treatment, yet showing an ideality factor as low as 1.14, showing the possibility of achieving high-performance Schottky diodes on flexible plastic substrate

  5. Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

    Energy Technology Data Exchange (ETDEWEB)

    Cho, Min Sung; Yamamoto, Akio [Dept. of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo (Japan)

    2016-09-15

    Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively.

  6. Dielectric oil-based polymer actuator for improved thickness strain and breakdown voltage

    International Nuclear Information System (INIS)

    Cho, Min Sung; Yamamoto, Akio

    2016-01-01

    Dielectric elastomer actuators (DEAs) have been increasingly investigated as alternative actuators to conventional ones. However, DEAs suffer from high rates of premature failure. Therefore, this study proposes a dielectric oil-based polymer actuator, also called a Dielectric liquid actuator (DLA), to compensate for the drawbacks of DEAs. DLA was experimentally compared with conventional DEAs. Results showed that DLA successfully prevented thermal runaway at defects in the electrode and excessive thinning of the film, resulting in increased breakdown voltage. Consequently, premature failure was inhibited, and the performance was improved. The breakdown voltages of DLA and DEA were 6000 and 2000 V, respectively, and their maximum thickness strains were 49.5% and 37.5%, respectively

  7. Analytical modeling of Schottky tunneling source impact ionization MOSFET with reduced breakdown voltage

    Directory of Open Access Journals (Sweden)

    Sangeeta Singh

    2016-03-01

    Full Text Available In this paper, we have investigated a novel Schottky tunneling source impact ionization MOSFET (STS-IMOS to lower the breakdown voltage of conventional impact ionization MOS (IMOS and developed an analytical model for the same. In STS-IMOS there is an accumulative effect of both impact ionization and source induced barrier tunneling. The silicide source offers very low parasitic resistance, the outcome of which is an increment in voltage drop across the intrinsic region for the same applied bias. This reduces operating voltage and hence, it exhibits a significant reduction in both breakdown and threshold voltage. STS-IMOS shows high immunity against hot electron damage. As a result of this the device reliability increases magnificently. The analytical model for impact ionization current (Iii is developed based on the integration of ionization integral (M. Similarly, to get Schottky tunneling current (ITun expression, Wentzel–Kramers–Brillouin (WKB approximation is employed. Analytical models for threshold voltage and subthreshold slope is optimized against Schottky barrier height (ϕB variation. The expression for the drain current is computed as a function of gate-to-drain bias via integral expression. It is validated by comparing it with the technology computer-aided design (TCAD simulation results as well. In essence, this analytical framework provides the physical background for better understanding of STS-IMOS and its performance estimation.

  8. High voltage engineering

    CERN Document Server

    Rizk, Farouk AM

    2014-01-01

    Inspired by a new revival of worldwide interest in extra-high-voltage (EHV) and ultra-high-voltage (UHV) transmission, High Voltage Engineering merges the latest research with the extensive experience of the best in the field to deliver a comprehensive treatment of electrical insulation systems for the next generation of utility engineers and electric power professionals. The book offers extensive coverage of the physical basis of high-voltage engineering, from insulation stress and strength to lightning attachment and protection and beyond. Presenting information critical to the design, selec

  9. High voltage test techniques

    CERN Document Server

    Kind, Dieter

    2001-01-01

    The second edition of High Voltage Test Techniques has been completely revised. The present revision takes into account the latest international developments in High Voltage and Measurement technology, making it an essential reference for engineers in the testing field.High Voltage Technology belongs to the traditional area of Electrical Engineering. However, this is not to say that the area has stood still. New insulating materials, computing methods and voltage levels repeatedly pose new problems or open up methods of solution; electromagnetic compatibility (EMC) or components and systems al

  10. Subnanosecond breakdown in high-pressure gases

    Science.gov (United States)

    Naidis, George V.; Tarasenko, Victor F.; Babaeva, Natalia Yu; Lomaev, Mikhail I.

    2018-01-01

    Pulsed discharges in high-pressure gases are of considerable interest as sources of nonequilibrium plasma for various technological applications: pollution control, pumping of laser media, plasma-assisted combustion, etc. Recently, attention has been attracted to the use of subnanosecond voltage fronts, producing diffuse discharges with radii of several millimeters. Such plasma structures, similar to pulsed glow discharges, are of special interest for applications due to quasi-uniformity of plasma parameters in relatively large gas volumes. This review presents the results of experimental and computational study of subnanosecond diffuse discharge formation. A description of generators of short high-voltage pulses with subnanosecond fronts and of discharge setups is given. Diagnostic methods for the measurement of various discharge parameters with high temporal and spatial resolution are described. Obtained experimental data on plasma properties for a wide range of governing factors are discussed. A review of various theoretical approaches used for computational study of the dynamics and structure of fast ionization waves is given; the applicability of conventional fluid streamer models for simulation of subnanosecond ionization waves is discussed. Calculated spatial-temporal profiles of plasma parameters during streamer propagation are presented. The efficiency of subnanosecond discharges for the production of reactive species is evaluated. On the basis of the comparison of simulation results and experimental data the effects of various factors (voltage rise time, polarity, etc.) on discharge characteristics are revealed. The major physical phenomena governing the properties of subnanosecond breakdown are analyzed.

  11. Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

    International Nuclear Information System (INIS)

    Duan Bao-Xing; Yang Yin-Tang

    2012-01-01

    In this paper, two-dimensional electron gas (2DEG) regions in AlGaN/GaN high electron mobility transistors (HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time. A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge. The high electric field near the gate for the complete silicon doping structure is effectively decreased, which makes the surface electric field uniform. The high electric field peak near the drain results from the potential difference between the surface and the depletion regions. Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer. The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain. The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  12. Effect of neutron irradiation on the breakdown voltage of power MOSFET's

    International Nuclear Information System (INIS)

    Hasan, S.M.Y.; Kosier, S.L.; Schrimpf, R.D.; Galloway, K.F.

    1994-01-01

    The effect of neutron irradiation on power metal-oxide-semiconductor field effect transistor (power MOSFET) breakdown voltage has been investigated. Transistors with various breakdown voltage ratings were irradiated in a TRIGA nuclear reactor with cumulative fluence levels up to 5 x 10 14 neutrons/cm 2 (1 MeV equivalent). Noticeable increases in the breakdown voltages are observed in n-type MOSFET's after 10 13 neutrons/cm 2 and in p-type MOSFETs after 10 12 neutrons/cm 2 . An increase in breakdown voltage of as much as 30% is observed after 5 x 10 14 neutrons/cm 2 . The increase in breakdown voltage is attributed to the neutron-irradiation-induced defects which decrease the mean free path and trap majority carriers in the space charge region. The effect of positive trapped oxide charge due to concomitant gamma radiation and the effect of the termination structure on the increase in breakdown voltage are considered. An empirical model is presented to predict the value of the breakdown voltage as a function of neutron fluence

  13. Lowering effect of radioactive irradiation on breakdown voltage and electron avalanche pulse characteristics

    International Nuclear Information System (INIS)

    Kawahashi, Akira; Nakano, Toru; Hosokawa, Tatsuzo; Miyoshi, Yosinori.

    1976-01-01

    In the time resolving measurement of the growing process and breakdown of electron avalanche in a gap of uniform electric field, the phenomenon that DC breakdown voltage slightly lowered was observed when β ray was irradiated as the initial electron source, as compared with unirradiated condition. Beta source used is 90 Sr- 90 Y of 2 mCi in radiative equilibrium. The experimental results and the examination are described in detail. In brief, the remarkable superposition of succeeding avalanche pulse over the preceeding avalanche pulse waveform was observed under the gap condition in which the breakdown voltage decreased in β-ray irradiation. Thus this superposition of avalanche pulses is considered as one of the causes of the breakdown voltage reduction. When β source is used as the initial electron source, the number of supplied initial electrons is very large as compared with unity, and at the same time, a great number of initial electrons can be supplied within the diffusion radius r of avalanche. Then the effect of initial electron number n 0 was considered by employing a diagram for breakdown scheme. The transition from Townsend type breakdown to streamer type breakdown occurs owing to increasing n 0 , and in that condition, the breakdown voltage lowers slightly. (Wakatsuki, Y)

  14. 5.0 kV breakdown-voltage vertical GaN p-n junction diodes

    Science.gov (United States)

    Ohta, Hiroshi; Hayashi, Kentaro; Horikiri, Fumimasa; Yoshino, Michitaka; Nakamura, Tohru; Mishima, Tomoyoshi

    2018-04-01

    A high breakdown voltage of 5.0 kV has been achieved for the first time in vertical GaN p-n junction diodes by using our newly developed guard-ring structures. A resistance device was inserted between the main diode portion and the guard-ring portion in a ring-shaped p-n diode to generate a voltage drop over the resistance device by leakage current flowing through the guard-ring portion under negatively biased conditions before breakdown. The voltage at the outer mesa edge of the guard-ring portion, where the electric field intensity is highest and the destructive breakdown usually occurs, is decreased by the voltage drop, so the electric field concentration in the portion is reduced. By adopting this structure, the breakdown voltage (V B) is raised by about 200 V. Combined with a low measured on-resistance (R on) of 1.25 mΩ cm2, Baliga’s figure of merit (V\\text{B}2/R\\text{on}) was as high as 20 GW/cm2.

  15. Breakdown voltage reduction by field emission in multi-walled carbon nanotubes based ionization gas sensor

    Energy Technology Data Exchange (ETDEWEB)

    Saheed, M. Shuaib M.; Muti Mohamed, Norani; Arif Burhanudin, Zainal, E-mail: zainabh@petronas.com.my [Centre of Innovative Nanostructures and Nanodevices, Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 31750 Tronoh, Perak (Malaysia)

    2014-03-24

    Ionization gas sensors using vertically aligned multi-wall carbon nanotubes (MWCNT) are demonstrated. The sharp tips of the nanotubes generate large non-uniform electric fields at relatively low applied voltage. The enhancement of the electric field results in field emission of electrons that dominates the breakdown mechanism in gas sensor with gap spacing below 14 μm. More than 90% reduction in breakdown voltage is observed for sensors with MWCNT and 7 μm gap spacing. Transition of breakdown mechanism, dominated by avalanche electrons to field emission electrons, as decreasing gap spacing is also observed and discussed.

  16. High voltage switches having one or more floating conductor layers

    Science.gov (United States)

    Werne, Roger W.; Sampayan, Stephen; Harris, John Richardson

    2015-11-24

    This patent document discloses high voltage switches that include one or more electrically floating conductor layers that are isolated from one another in the dielectric medium between the top and bottom switch electrodes. The presence of the one or more electrically floating conductor layers between the top and bottom switch electrodes allow the dielectric medium between the top and bottom switch electrodes to exhibit a higher breakdown voltage than the breakdown voltage when the one or more electrically floating conductor layers are not present between the top and bottom switch electrodes. This increased breakdown voltage in the presence of one or more electrically floating conductor layers in a dielectric medium enables the switch to supply a higher voltage for various high voltage circuits and electric systems.

  17. One-dimensional breakdown voltage model of SOI RESURF lateral power device based on lateral linearly graded approximation

    International Nuclear Information System (INIS)

    Zhang Jun; Guo Yu-Feng; Xu Yue; Lin Hong; Yang Hui; Hong Yang; Yao Jia-Fei

    2015-01-01

    A novel one-dimensional (1D) analytical model is proposed for quantifying the breakdown voltage of a reduced surface field (RESURF) lateral power device fabricated on silicon on an insulator (SOI) substrate. We assume that the charges in the depletion region contribute to the lateral PN junctions along the diagonal of the area shared by the lateral and vertical depletion regions. Based on the assumption, the lateral PN junction behaves as a linearly graded junction, thus resulting in a reduced surface electric field and high breakdown voltage. Using the proposed model, the breakdown voltage as a function of device parameters is investigated and compared with the numerical simulation by the TCAD tools. The analytical results are shown to be in fair agreement with the numerical results. Finally, a new RESURF criterion is derived which offers a useful scheme to optimize the structure parameters. This simple 1D model provides a clear physical insight into the RESURF effect and a new explanation on the improvement in breakdown voltage in an SOI RESURF device. (paper)

  18. Calculations following voltage breakdown in a single-ended Van de Graaff with an accelerator tube

    International Nuclear Information System (INIS)

    Staniforth, J.A.

    1979-01-01

    Calculation of voltages and voltage gradients in the terminal, along the insulating column and the accelerating tube are described for various breakdown positions. The method uses a number of inverted-L network sections to represent the machine assuming that the tube is coupled to the column. Various forms of coupling are examined. The calculations use an iterative computer program which calculates the voltages and currents in the networks at successive small time intervals. (author)

  19. High-voltage picoamperemeter

    Energy Technology Data Exchange (ETDEWEB)

    Bugl, Andrea; Ball, Markus; Boehmer, Michael; Doerheim, Sverre; Hoenle, Andreas; Konorov, Igor [Technische Universitaet Muenchen, Garching (Germany); Ketzer, Bernhard [Technische Universitaet Muenchen, Garching (Germany); Helmholtz-Institut fuer Strahlen- und Kernphysik, Bonn (Germany)

    2014-07-01

    Current measurements in the nano- and picoampere region on high voltage are an important tool to understand charge transfer processes in micropattern gas detectors like the Gas Electron Multiplier (GEM). They are currently used to e.g. optimize the field configuration in a multi-GEM stack to be used in the ALICE TPC after the upgrade of the experiment during the 2nd long shutdown of the LHC. Devices which allow measurements down to 1pA at high voltage up to 6 kV have been developed at TU Muenchen. They are based on analog current measurements via the voltage drop over a switchable shunt. A microcontroller collects 128 digital ADC values and calculates their mean and standard deviation. This information is sent with a wireless transmitting unit to a computer and stored in a root file. A nearly unlimited number of devices can be operated simultaneously and read out by a single receiver. The results can also be displayed on a LCD directly at the device. Battery operation and the wireless readout are important to protect the user from any contact to high voltage. The principle of the device is explained, and systematic studies of their properties are shown.

  20. The humidity effect on the breakdown voltage characteristics and the transport parameters of air

    International Nuclear Information System (INIS)

    Radmilović-Radjenović, M.; Radjenović, B.; Nikitović, Ž.; Matejčik, Š.; Klas, M.

    2012-01-01

    This paper contains experimental results for the direct current (DC) breakdown voltages and calculated transport parameters for dry, synthetic and ambient air. The breakdown voltage curves for dry, ambient and synthetic air at the gap size of 100μm are very similar. The differences between them are much more pronounced at the interelectrode separation of 20μm, especially at the right hand branch of the breakdown voltage curves. On the other hand, the effective yields γ for dry and synthetic air are in disagreement at lower values of the E/p. Results of calculations based on the Two Term Approximation indicate that the humidity has no a great influence on the transport parameters at all range of the reduce field E/N.

  1. High Voltage Seismic Generator

    Science.gov (United States)

    Bogacz, Adrian; Pala, Damian; Knafel, Marcin

    2015-04-01

    This contribution describes the preliminary result of annual cooperation of three student research groups from AGH UST in Krakow, Poland. The aim of this cooperation was to develop and construct a high voltage seismic wave generator. Constructed device uses a high-energy electrical discharge to generate seismic wave in ground. This type of device can be applied in several different methods of seismic measurement, but because of its limited power it is mainly dedicated for engineering geophysics. The source operates on a basic physical principles. The energy is stored in capacitor bank, which is charged by two stage low to high voltage converter. Stored energy is then released in very short time through high voltage thyristor in spark gap. The whole appliance is powered from li-ion battery and controlled by ATmega microcontroller. It is possible to construct larger and more powerful device. In this contribution the structure of device with technical specifications is resented. As a part of the investigation the prototype was built and series of experiments conducted. System parameter was measured, on this basis specification of elements for the final device were chosen. First stage of the project was successful. It was possible to efficiently generate seismic waves with constructed device. Then the field test was conducted. Spark gap wasplaced in shallowborehole(0.5 m) filled with salt water. Geophones were placed on the ground in straight line. The comparison of signal registered with hammer source and sparker source was made. The results of the test measurements are presented and discussed. Analysis of the collected data shows that characteristic of generated seismic signal is very promising, thus confirms possibility of practical application of the new high voltage generator. The biggest advantage of presented device after signal characteristics is its size which is 0.5 x 0.25 x 0.2 m and weight approximately 7 kg. This features with small li-ion battery makes

  2. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.; Abdelghany, Mohamed A.; Elsayed, Mohannad Yomn; Elshurafa, Amro M; Salama, Khaled N.

    2014-01-01

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  3. High Voltage Charge Pump

    KAUST Repository

    Emira, Ahmed A.

    2014-10-09

    Various embodiments of a high voltage charge pump are described. One embodiment is a charge pump circuit that comprises a plurality of switching stages each including a clock input, a clock input inverse, a clock output, and a clock output inverse. The circuit further comprises a plurality of pumping capacitors, wherein one or more pumping capacitors are coupled to a corresponding switching stage. The circuit also comprises a maximum selection circuit coupled to a last switching stage among the plurality of switching stages, the maximum selection circuit configured to filter noise on the output clock and the output clock inverse of the last switching stage, the maximum selection circuit further configured to generate a DC output voltage based on the output clock and the output clock inverse of the last switching stage.

  4. High voltage investigations for ITER coils

    International Nuclear Information System (INIS)

    Fink, S.; Fietz, W.H.

    2006-01-01

    The superconducting ITER magnets will be excited with high voltage during operation and fast discharge. Because the coils are complex systems the internal voltage distribution can differ to a large extent from the ideal linear voltage distribution. In case of fast excitations internal voltages between conductor and radial plate of a TF coil can be even higher than the terminal voltage of 3.5 kV to ground which appears during a fast discharge without a fault. Hence the determination of the transient voltage distribution is important for a proper insulation co-ordination and will provide a necessary basis for the verification of the individual insulation design and the choice of test voltages and waveforms. Especially the extent of internal overvoltages in case of failures, e. g. malfunction of discharge units and / or arcing is of special interest. Transient calculations for the ITER TF coil system have been performed for fast discharge and fault scenarios to define test voltages for ITER TF. The conductor and radial plate insulation of the ITER TF Model Coil were exposed at room temperature to test voltages derived from the results from these calculations. Breakdown appeared during the highest AC voltage step. A fault scenario for the TF fast discharge system is presented where one fault triggers a second fault, leading to considerable voltage stress. In addition a FEM model of Poloidal Field Coil 3 for the determination of the parameters of a detailed network model is presented in order to prepare detailed investigations of the transient voltage behaviour of the PF coils. (author)

  5. Breakdown voltage mapping through voltage dependent ReBEL intensity imaging of multi-crystalline Si solar cells

    Science.gov (United States)

    Dix-Peek, RM.; van Dyk, EE.; Vorster, FJ.; Pretorius, CJ.

    2018-04-01

    Device material quality affects both the efficiency and the longevity of photovoltaic (PV) cells. Therefore, identifying these defects can be beneficial in the development of more efficient and longer lasting PV cells. In this study, a combination of spatially-resolved, electroluminescence (EL), and light beam induced current (LBIC) measurements, were used to identify specific defects and features of a multi-crystalline Si PV cells. In this study, a novel approach is used to map the breakdown voltage of a PV cell through voltage dependent Reverse Bias EL (ReBEL) intensity imaging.

  6. Improving breakdown voltage performance of SOI power device with folded drift region

    Science.gov (United States)

    Qi, Li; Hai-Ou, Li; Ping-Jiang, Huang; Gong-Li, Xiao; Nian-Jiong, Yang

    2016-07-01

    A novel silicon-on-insulator (SOI) high breakdown voltage (BV) power device with interlaced dielectric trenches (IDT) and N/P pillars is proposed. In the studied structure, the drift region is folded by IDT embedded in the active layer, which results in an increase of length of ionization integral remarkably. The crowding phenomenon of electric field in the corner of IDT is relieved by the N/P pillars. Both traits improve two key factors of BV, the ionization integral length and electric field magnitude, and thus BV is significantly enhanced. The electric field in the dielectric layer is enhanced and a major portion of bias is borne by the oxide layer due to the accumulation of inverse charges (holes) at the corner of IDT. The average value of the lateral electric field of the proposed device reaches 60 V/μm with a 10 μm drift length, which increases by 200% in comparison to the conventional SOI LDMOS, resulting in a breakdown voltage of 607 V. Project supported by the Guangxi Natural Science Foundation of China (Grant Nos. 2013GXNSFAA019335 and 2015GXNSFAA139300), Guangxi Experiment Center of Information Science of China (Grant No. YB1406), Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing of China, Key Laboratory of Cognitive Radio and Information Processing (Grant No. GXKL061505), Guangxi Key Laboratory of Automobile Components and Vehicle Technology of China (Grant No. 2014KFMS04), and the National Natural Science Foundation of China (Grant Nos. 61361011, 61274077, and 61464003).

  7. High voltage isolation transformer

    Science.gov (United States)

    Clatterbuck, C. H.; Ruitberg, A. P. (Inventor)

    1985-01-01

    A high voltage isolation transformer is provided with primary and secondary coils separated by discrete electrostatic shields from the surfaces of insulating spools on which the coils are wound. The electrostatic shields are formed by coatings of a compound with a low electrical conductivity which completely encase the coils and adhere to the surfaces of the insulating spools adjacent to the coils. Coatings of the compound also line axial bores of the spools, thereby forming electrostatic shields separating the spools from legs of a ferromagnetic core extending through the bores. The transformer is able to isolate a high constant potential applied to one of its coils, without the occurrence of sparking or corona, by coupling the coatings, lining the axial bores to the ferromagnetic core and by coupling one terminal of each coil to the respective coating encasing the coil.

  8. Experimental validation of prototype high voltage bushing

    Science.gov (United States)

    Shah, Sejal; Tyagi, H.; Sharma, D.; Parmar, D.; M. N., Vishnudev; Joshi, K.; Patel, K.; Yadav, A.; Patel, R.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A.

    2017-08-01

    Prototype High voltage bushing (PHVB) is a scaled down configuration of DNB High Voltage Bushing (HVB) of ITER. It is designed for operation at 50 kV DC to ensure operational performance and thereby confirming the design configuration of DNB HVB. Two concentric insulators viz. Ceramic and Fiber reinforced polymer (FRP) rings are used as double layered vacuum boundary for 50 kV isolation between grounded and high voltage flanges. Stress shields are designed for smooth electric field distribution. During ceramic to Kovar brazing, spilling cannot be controlled which may lead to high localized electrostatic stress. To understand spilling phenomenon and precise stress calculation, quantitative analysis was performed using Scanning Electron Microscopy (SEM) of brazed sample and similar configuration modeled while performing the Finite Element (FE) analysis. FE analysis of PHVB is performed to find out electrical stresses on different areas of PHVB and are maintained similar to DNB HV Bushing. With this configuration, the experiment is performed considering ITER like vacuum and electrical parameters. Initial HV test is performed by temporary vacuum sealing arrangements using gaskets/O-rings at both ends in order to achieve desired vacuum and keep the system maintainable. During validation test, 50 kV voltage withstand is performed for one hour. Voltage withstand test for 60 kV DC (20% higher rated voltage) have also been performed without any breakdown. Successful operation of PHVB confirms the design of DNB HV Bushing. In this paper, configuration of PHVB with experimental validation data is presented.

  9. The Investigation of Field Plate Design in 500 V High Voltage NLDMOS

    Directory of Open Access Journals (Sweden)

    Donghua Liu

    2015-01-01

    Full Text Available This paper presents a 500 V high voltage NLDMOS with breakdown voltage (VBD improved by field plate technology. Effect of metal field plate (MFP and polysilicon field plate (PFP on breakdown voltage improvement of high voltage NLDMOS is studied. The coeffect of MFP and PFP on drain side has also been investigated. A 500 V NLDMOS is demonstrated with a 37 μm drift length and optimized MFP and PFP design. Finally the breakdown voltage 590 V and excellent on-resistance performance (Rsp = 7.88 ohm * mm2 are achieved.

  10. Space Charge Modulated Electrical Breakdown of Oil Impregnated Paper Insulation Subjected to AC-DC Combined Voltages

    Directory of Open Access Journals (Sweden)

    Yuanwei Zhu

    2018-06-01

    Full Text Available Based on the existing acknowledgment that space charge modulates AC and DC breakdown of insulating materials, this investigation promotes the related investigation into the situations of more complex electrical stress, i.e., AC-DC combined voltages. Experimentally, the AC-DC breakdown characteristics of oil impregnated paper insulation were systematically investigated. The effects of pre-applied voltage waveform, AC component ratio, and sample thickness on AC-DC breakdown characteristics were analyzed. After that, based on an improved bipolar charge transport model, the space charge profiles and the space charge induced electric field distortion during AC-DC breakdown were numerically simulated to explain the differences in breakdown characteristics between the pre-applied AC and pre-applied DC methods under AC-DC combined voltages. It is concluded that large amounts of homo-charges are accumulated during AC-DC breakdown, which results in significantly distorted inner electric field, leading to variations of breakdown characteristics of oil impregnated paper insulation. Therefore, space charges under AC-DC combined voltages must be considered in the design of converter transformers. In addition, this investigation could provide supporting breakdown data for insulation design of converter transformers and could promote better understanding on the breakdown mechanism of insulating materials subjected to AC-DC combined voltages.

  11. Hopf bifurcation and chaos from torus breakdown in voltage-mode controlled DC drive systems

    International Nuclear Information System (INIS)

    Dai Dong; Ma Xikui; Zhang Bo; Tse, Chi K.

    2009-01-01

    Period-doubling bifurcation and its route to chaos have been thoroughly investigated in voltage-mode and current-mode controlled DC motor drives under simple proportional control. In this paper, the phenomena of Hopf bifurcation and chaos from torus breakdown in a voltage-mode controlled DC drive system is reported. It has been shown that Hopf bifurcation may occur when the DC drive system adopts a more practical proportional-integral control. The phenomena of period-adding and phase-locking are also observed after the Hopf bifurcation. Furthermore, it is shown that the stable torus can breakdown and chaos emerges afterwards. The work presented in this paper provides more complete information about the dynamical behaviors of DC drive systems.

  12. Energetic breakdowns and voltage hold-off between copper electrodes in vacuum

    International Nuclear Information System (INIS)

    Bottiglioni, F.; Bussac, J.P.

    1980-10-01

    In high power neutral beam injections, used for thermonuclear research, very high ion currents are extracted from large area ion sources, using an assembly of three or four extraction grids. The extraction system must be very reliable and unaffected by breakdowns that may occur between grids. The aim of the experiments described here, is to infer some empirical laws allowing to dimension the ion sources grid gaps and to assess what energy in the breakdowns leads to irreversible damages

  13. Characteristics of AlGaN/GaN/AlGaN double heterojunction HEMTs with an improved breakdown voltage

    International Nuclear Information System (INIS)

    Ma Juncai; Zhang Jincheng; Xue Junshuai; Lin Zhiyu; Liu Ziyang; Xue Xiaoyong; Ma Xiaohua; Hao Yue

    2012-01-01

    We studied the performance of AlGaN/GaN double heterojunction high electron mobility transistors (DH-HEMTs) with an AlGaN buffer layer, which leads to a higher potential barrier at the backside of the two-dimensional electron gas channel and better carrier confinement. This, remarkably, reduces the drain leakage current and improves the device breakdown voltage. The breakdown voltage of AlGaN/GaN double heterojunction HEMTs (∼100 V) was significantly improved compared to that of conventional AlGaN/GaN HEMTs (∼50 V) for the device with gate dimensions of 0.5 × 100 μm and a gate—drain distance of 1 μm. The DH-HEMTs also demonstrated a maximum output power of 7.78 W/mm, a maximum power-added efficiency of 62.3% and a linear gain of 23 dB at the drain supply voltage of 35 V at 4 GHz. (semiconductor devices)

  14. Computer controlled high voltage system

    Energy Technology Data Exchange (ETDEWEB)

    Kunov, B; Georgiev, G; Dimitrov, L [and others

    1996-12-31

    A multichannel computer controlled high-voltage power supply system is developed. The basic technical parameters of the system are: output voltage -100-3000 V, output current - 0-3 mA, maximum number of channels in one crate - 78. 3 refs.

  15. CMOS-compatible high-voltage integrated circuits

    Energy Technology Data Exchange (ETDEWEB)

    Parpia, Z

    1988-01-01

    Considerable savings in cost and development time can be achieved if high-voltage ICs (HVICs) are fabricated in an existing low-voltage process. In this thesis, the feasibility of fabricating HVICs in a standard CMOS process is investigated. The high-voltage capabilities of an existing 5-{mu}m CMOS process are first studied. High-voltage n- and p-channel transistors with breakdown voltages of 50 and 190 V, respectively, were fabricated without any modifications to the process under consideration. SPICE models for these transistors are developed, and their accuracy verified by comparison with experimental results. In addition, the effect of the interconnect metallization on the high-voltage performance of these devices is also examined. Polysilicon field plates are found to be effective in preventing premature interconnect induced breakdown in these devices. A novel high-voltage transistor structure, the insulated base transistor (IBT), based on a merged MOS-bipolar concept, is proposed and implemented. In order to enhance the high-voltage device capabilities, an improved CMOS-compatible HVIC process using junction isolation is developed.

  16. High voltage distributions in RPCs

    International Nuclear Information System (INIS)

    Inoue, Y.; Muranishi, Y.; Nakamura, M.; Nakano, E.; Takahashi, T.; Teramoto, Y.

    1996-01-01

    High voltage distributions on the inner surfaces of RPCs electrodes were calculated by using a two-dimensional resistor network model. The calculated result shows that the surface resistivity of the electrodes should be high, compared to their volume resistivity, to get a uniform high voltage over the surface. Our model predicts that the rate capabilities of RPCs should be inversely proportional to the thickness of the electrodes if the ratio of surface-to-volume resistivity is low. (orig.)

  17. Effect of Reverse Bias Stress on Leakage Currents and Breakdown Voltages of Solid Tantalum Capacitors

    Science.gov (United States)

    Teverovsky, Alexander A.

    2011-01-01

    the processes under reverse bias conditions. In practice, there were instances when, due to unforeseen events, the system operated at conditions when capacitors experience periodically a relatively small reverse bias for some time followed by normal, forward bias conditions. In such a case an assessment should be made on the degree to which these capacitors are degraded by application of low-voltage reverse bias, and whether this degradation can be reversed by normal operating conditions. In this study, reverse currents in different types of tantalum capacitors were monitored at different reverse voltages below 15%VR and temperatures in the range from room to 145 C for up to 150 hours to get better understanding of the degradation process and determine conditions favorable to the unstable mode of operation. The reversibility of RB degradation has been evaluated after operation of the capacitors at forward bias conditions. The effect of reverse bias stress (RBS) on reliability at normal operating conditions was evaluated using highly accelerated life testing at voltages of 1.5VR and 2 VR and by analysis of changes in distributions of breakdown voltages. Possible mechanisms of RB degradation are discussed.

  18. Discussion - a high voltage DC generator

    International Nuclear Information System (INIS)

    Bhagwat, P.V.; Singh, Jagir; Hattangadi, V.A.

    1993-01-01

    One of the requirements for a high power ion source is a high voltage, high current DC generator. The high voltage, high current generator, DISCATRON, presently under development in our laboratory is a rotating disc type electrostatic generator similar in design to the one reported by A. Isoya et al. (1985). It is compact and rugged electrostatic DC generator based on the principle of induction charging by pellet chains used in the pelletron accelerator. It is, basically, a constant-current device with little stored energy, so that, in case of a breakdown, damage to the equipment connected to the output terminals is minimal. Since the present generator is only a proto-type, meant for a study of the practical difficulties that would be encountered in its manufacture, the output voltage and current specified has been kept quite modest viz., 300 kV at 500 μA, maximum. Some results of the preliminary tests carried out with this generator are described. (author). 4 figs

  19. High stored-energy breakdown tests on electrodes made of stainless steel, copper, titanium and molybdenum

    Energy Technology Data Exchange (ETDEWEB)

    Esch, H. P. L. de, E-mail: hubert.de-esch@cea.fr; Simonin, A.; Grand, C. [CEA-Cadarache, IRFM, F-13108 St. Paul-lez-Durance (France)

    2015-04-08

    IRFM have conducted resilience tests on electrodes made of Cu, stainless steel 304L, Ti and Mo against breakdowns up to 170 kV and 300 J. The tests of the 10×10 cm{sup 2} electrodes have been performed at an electrode distance d=11 mm under vacuum (P∼5×10{sup −6} mbar). No great difference in voltage holding between the materials could be identified; all materials could reach a voltage holding between 140 and 170 kV over the 11 mm gap, i.e. results scatter within a ±10% band. After exposure to ∼10000 seconds of high-voltage (HV) on-time, having accumulated ∼1000 breakdowns, the electrodes were inspected. The anodes were covered with large and small craters. The rugosity of the anodes had increased substantially, that of the cathodes to a lesser extent. The molybdenum electrodes are least affected, but this does not show in their voltage holding capability. It is hypothesized that penetrating high-energy electrons from the breakdown project heat below the surface of the anode and cause a micro-explosion of material when melting point is exceeded. Polished electrodes have also been tested. The polishing results in a substantially reduced breakdown rate in the beginning, but after having suffered a relatively small number (∼100) of breakdowns, the polished electrodes behaved the same as the unpolished ones.

  20. Modular High Voltage Power Supply

    Energy Technology Data Exchange (ETDEWEB)

    Newell, Matthew R. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

    2017-05-18

    The goal of this project is to develop a modular high voltage power supply that will meet the needs of safeguards applications and provide a modular plug and play supply for use with standard electronic racks.

  1. Robust AIC with High Breakdown Scale Estimate

    Directory of Open Access Journals (Sweden)

    Shokrya Saleh

    2014-01-01

    Full Text Available Akaike Information Criterion (AIC based on least squares (LS regression minimizes the sum of the squared residuals; LS is sensitive to outlier observations. Alternative criterion, which is less sensitive to outlying observation, has been proposed; examples are robust AIC (RAIC, robust Mallows Cp (RCp, and robust Bayesian information criterion (RBIC. In this paper, we propose a robust AIC by replacing the scale estimate with a high breakdown point estimate of scale. The robustness of the proposed methods is studied through its influence function. We show that, the proposed robust AIC is effective in selecting accurate models in the presence of outliers and high leverage points, through simulated and real data examples.

  2. Nanocomposite dielectrics in PbO-BaO-Na2O-Nb2O5-SiO2 system with high breakdown strength for high voltage capacitor applications.

    Science.gov (United States)

    Zhang, Qingmeng; Luo, Jun; Tang, Qun; Han, Dongfang; Zhou, Yi; Du, Jun

    2012-11-01

    Nanocomposite dielectrics in 6PbO-4BaO-20Na2O-40Nb2O5-30SiO2 system were prepared via melt-quenching followed by controlled crystallization. X-ray diffraction studies reveal that Pb2Nb2O7, Ba,NaNb5O15, NaNbO3 and PbNb2O6 phases are formed from the as-quenched glass annealed in temperature range from 700 degrees C to 850 degrees C. Ba2NaNb5O15, Pb2Nb2O7 crystallizes at 700 degrees C and then Pb2Nb2O7 disappears at 850 degrees C, while PbNb2O6 and NaNbO3 are formed at 850 degrees C. Microstructural observation shows that the crystallized particles are nanometer-sized and randomly distributed with glass matrix being often found at grain boundaries. The dielectric constant of the nanocomposites formed at different crystallization temperatures shows good frequency and electric field stability. The breakdown strength is slightly decreased when the glass-ceramics thickness is varied from 1 mm to 4 mm. The corresponding energy density could reach 2.96 J/cm3 with a breakdown strength of 58 kV/mm for thickness of 1 mm.

  3. Comparative Studies of High-Gradient Rf and Dc Breakdowns

    CERN Document Server

    Kovermann, Jan Wilhelm; Wuensch, Walter

    2010-01-01

    The CLIC project is based on normal-conducting high-gradient accelerating structures with an average accelerating gradient of 100 MV/m. The maximum achievable gradient in these structures is limited by the breakdown phenomenon. The physics of breakdowns is not yet fully understood quantitatively. A full knowledge could have strong impact on the design, material choice and construction of rf structures. Therefore, understanding breakdowns has great importance to reaching a gradient of 100MV/m with an acceptable breakdown probability. This thesis addresses the physics underlying the breakdown effect, focusing on a comparison of breakdowns in rf structures and in a dc spark setup. The dc system is simpler, easier to benchmark against simulations, with a faster turnaround time, but the relationship to rf breakdown must be established. To do so, an experimental approach based on optical diagnostics and electrical measurements methods was made. Following an introduction into the CLIC project, a general theoretical ...

  4. Breakdown Voltage of CF3CHCl2 gas an Alternative to SF6 Gas using HV Test and Bonding Energy Methods

    Science.gov (United States)

    Juliandhy, Tedy; Haryono, T.; Suharyanto; Perdana, Indra

    2018-04-01

    For more than two decades of Sulphur Hexafluoride (SF6) gases is used as a gas insulation in high voltage equipment especially in substations. In addition to getting an advantage as an insulating gas. SF6 gas is recognized as one of the greenhouse effect gases that cause global warming. Under the Kyoto Protocol, SF6 gas is one of those gases whose use is restricted and gradually reduced to the presence of a replacement gas for SF6 gas. One of the alternative gas alternatives which have the potential of replacing SF6 gas as an insulating gas in Gas Insulated Switchgear (GIS) equipment in the substation is Dichlorotrifluoroethane (CF3CHCl2) gas. The purpose of this paper is to enable a comparison of breakdown voltage with high voltage test and method of calculating Bonding energy to Dichlorotrifluoroethane gas as substitute gas for SF6 gas. At 0.1 bar gas pressure obtained an average breakdown voltage of 18.68 kV / mm at 25oC chamber temperature and has the highest breakdown voltage at 50oC with a breakdown voltage of 19.56 kV / mm. The CF3CHCl2 gas has great potential as an insulating gas because it has more insulation ability high of SF6 gas, and is part of the gas recommended under the Kyoto Protocol. Gas CF3CHCl2 has the capacity to double the value of electronegativity greater than SF6 gas as a major requirement of gas isolation and has a value of Global Warming Potential (GWP) and Ozone Depleting lower than from SF6 gas.

  5. Suppressing voltage transients in high voltage power supplies

    International Nuclear Information System (INIS)

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  6. Highly Efficient Estimators of Multivariate Location with High Breakdown Point

    NARCIS (Netherlands)

    Lopuhaa, H.P.

    1991-01-01

    We propose an affine equivariant estimator of multivariate location that combines a high breakdown point and a bounded influence function with high asymptotic efficiency. This proposal is basically a location $M$-estimator based on the observations obtained after scaling with an affine equivariant

  7. The high voltage homopolar generator

    Science.gov (United States)

    Price, J. H.; Gully, J. H.; Driga, M. D.

    1986-11-01

    System and component design features of proposed high voltage homopolar generator (HVHPG) are described. The system is to have an open circuit voltage of 500 V, a peak output current of 500 kA, 3.25 MJ of stored inertial energy and possess an average magnetic-flux density of 5 T. Stator assembly components are discussed, including the stator, mount structure, hydrostatic bearings, main and motoring brushgears and rotor. Planned operational procedures such as monitoring the rotor to full speed and operation with a superconducting field coil are delineated.

  8. High voltage power network construction

    CERN Document Server

    Harker, Keith

    2018-01-01

    This book examines the key requirements, considerations, complexities and constraints relevant to the task of high voltage power network construction, from design, finance, contracts and project management to installation and commissioning, with the aim of providing an overview of the holistic end to end construction task in a single volume.

  9. Transient voltage sharing in series-coupled high voltage switches

    Directory of Open Access Journals (Sweden)

    Editorial Office

    1992-07-01

    Full Text Available For switching voltages in excess of the maximum blocking voltage of a switching element (for example, thyristor, MOSFET or bipolar transistor such elements are often coupled in series - and additional circuitry has to be provided to ensure equal voltage sharing. Between each such series element and system ground there is a certain parasitic capacitance that may draw a significant current during high-speed voltage transients. The "open" switch is modelled as a ladder network. Analy­sis reveals an exponential progression in the distribution of the applied voltage across the elements. Overstressing thus oc­curs in some of the elements at levels of the total voltage that are significantly below the design value. This difficulty is overcome by grading the voltage sharing circuitry, coupled in parallel with each element, in a prescribed manner, as set out here.

  10. A novel high voltage start up circuit for an integrated switched mode power supply

    Energy Technology Data Exchange (ETDEWEB)

    Hu Hao; Chen Xingbi, E-mail: huhao21@uestc.edu.c [State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)

    2010-09-15

    A novel high voltage start up circuit for providing an initial bias voltage to an integrated switched mode power supply (SMPS) is presented. An enhanced mode VDMOS transistor, the gate of which is biased by a floating p-island, is used to provide start up current and sustain high voltage. An NMOS transistor having a high source to ground breakdown voltage is included to extend the bias voltage range to the SMPS. Simulation results indicate that the high voltage start up circuit can start and restart as designed. The proposed structure is believed to be more energy saving and cost-effective compared with other solutions. (semiconductor devices)

  11. High-voltage CMOS detectors

    International Nuclear Information System (INIS)

    Ehrler, F.; Blanco, R.; Leys, R.; Perić, I.

    2016-01-01

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  12. High-voltage CMOS detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ehrler, F., E-mail: felix.ehrler@student.kit.edu; Blanco, R.; Leys, R.; Perić, I.

    2016-07-11

    High-voltage CMOS (HVCMOS) pixel sensors are depleted active pixel sensors implemented in standard commercial CMOS processes. The sensor element is the n-well/p-substrate diode. The sensor electronics are entirely placed inside the n-well which is at the same time used as the charge collection electrode. High voltage is used to deplete the part of the substrate around the n-well. HVCMOS sensors allow implementation of complex in-pixel electronics. This, together with fast signal collection, allows a good time resolution, which is required for particle tracking in high energy physics. HVCMOS sensors will be used in Mu3e experiment at PSI and are considered as an option for both ATLAS and CLIC (CERN). Radiation tolerance and time walk compensation have been tested and results are presented. - Highlights: • High-voltage CMOS sensors will be used in Mu3e experiment at PSI (Switzerland). • HVCMOS sensors are considered as an option for ATLAS (LHC/CERN) and CLIC (CERN). • Efficiency of more than 95% (99%) has been measured with (un-)irradiated chips. • The time resolution measured in the beam tests is nearly 100 ns. • We plan to improve time resolution and efficiency by using high-resistive substrate.

  13. High Voltage GaN Schottky Rectifiers

    Energy Technology Data Exchange (ETDEWEB)

    CAO,X.A.; CHO,H.; CHU,S.N.G.; CHUO,C.-C.; CHYI,J.-I.; DANG,G.T.; HAN,JUNG; LEE,C.-M.; PEARTON,S.J.; REN,F.; WILSON,R.G.; ZHANG,A.P.

    1999-10-25

    Mesa and planar GaN Schottky diode rectifiers with reverse breakdown voltages (V{sub RB}) up to 550V and >2000V, respectively, have been fabricated. The on-state resistance, R{sub ON}, was 6m{Omega}{center_dot} cm{sup 2} and 0.8{Omega}cm{sup 2}, respectively, producing figure-of-merit values for (V{sub RB}){sup 2}/R{sub ON} in the range 5-48 MW{center_dot}cm{sup -2}. At low biases the reverse leakage current was proportional to the size of the rectifying contact perimeter, while at high biases the current was proportional to the area of this contact. These results suggest that at low reverse biases, the leakage is dominated by the surface component, while at higher biases the bulk component dominates. On-state voltages were 3.5V for the 550V diodes and {ge}15 for the 2kV diodes. Reverse recovery times were <0.2{micro}sec for devices switched from a forward current density of {approx}500A{center_dot}cm{sup -2} to a reverse bias of 100V.

  14. Advances in high voltage engineering

    CERN Document Server

    Haddad, A

    2005-01-01

    This book addresses the very latest research and development issues in high voltage technology and is intended as a reference source for researchers and students in the field, specifically covering developments throughout the past decade. This unique blend of expert authors and comprehensive subject coverage means that this book is ideally suited as a reference source for engineers and academics in the field for years to come.

  15. Temporary over voltages in the high voltage networks

    International Nuclear Information System (INIS)

    Vukelja, Petar; Naumov, Radomir; Mrvic, Jovan; Minovski, Risto

    2001-01-01

    The paper treats the temporary over voltages that may arise in the high voltage networks as a result of: ground faults, loss of load, loss of one or two phases and switching operation. Based on the analysis, the measures for their limitation are proposed. (Original)

  16. Statistical characteristics of transient enclosure voltage in ultra-high-voltage gas-insulated switchgear

    Science.gov (United States)

    Cai, Yuanji; Guan, Yonggang; Liu, Weidong

    2017-06-01

    Transient enclosure voltage (TEV), which is a phenomenon induced by the inner dielectric breakdown of SF6 during disconnector operations in a gas-insulated switchgear (GIS), may cause issues relating to shock hazard and electromagnetic interference to secondary equipment. This is a critical factor regarding the electromagnetic compatibility of ultra-high-voltage (UHV) substations. In this paper, the statistical characteristics of TEV at UHV level are collected from field experiments, and are analyzed and compared to those from a repeated strike process. The TEV waveforms during disconnector operations are recorded by a self-developed measurement system first. Then, statistical characteristics, such as the pulse number, duration of pulses, frequency components, magnitude and single pulse duration, are extracted. The transmission line theory is introduced to analyze the TEV and is validated by the experimental results. Finally, the relationship between the TEV and the repeated strike process is analyzed. This proves that the pulse voltage of the TEV is proportional to the corresponding breakdown voltage. The results contribute to the definition of the standard testing waveform of the TEV, and can aid the protection of electronic devices in substations by minimizing the threat of this phenomenon.

  17. A new partial SOI-LDMOSFET with a modified buried oxide layer for improving self-heating and breakdown voltage

    International Nuclear Information System (INIS)

    Jamali Mahabadi, S E; Orouji, Ali A; Keshavarzi, P; Moghadam, Hamid Amini

    2011-01-01

    In this paper, for the first time, we propose a partial silicon-on-insulator (P-SOI) lateral double-diffused metal-oxide-semiconductor-field-effect-transistor (LDMOSFET) with a modified buried layer in order to improve breakdown voltage (BV) and self-heating effects (SHEs). The main idea of this work is to control the electric field by shaping the buried layer. With two steps introduced in the buried layer, the electric field distribution is modified. Also a P-type window introduced makes the substrate share the vertical voltage drop, leading to a high vertical BV. Moreover, four interface electric field peaks are introduced by the buried P-layer, the Si window and two steps, which modulate the electric field in the SOI layer and the substrate. Hence, a more uniform electric field is obtained; consequently, a high BV is achieved. Furthermore, the Si window creates a conduction path between the active layer and substrate and alleviates the SHE. Two-dimensional simulations show that the BV of double step partial silicon on insulator is nearly 69% higher and alleviates SHEs 17% in comparison with its single step partial SOI counterpart and nearly 265% higher and alleviate SHEs 18% in comparison with its conventional SOI counterpart

  18. Uv laser triggering of high-voltage gas switches

    International Nuclear Information System (INIS)

    Woodworth, J.R.; Frost, C.A.; Green, T.A.

    1982-01-01

    Two different techniques are discussed for uv laser triggering of high-voltage gas switches using a KrF laser (248 nm) to create an ionized channel through the dielectric gas in a spark gap. One technique uses an uv laser to induce breakdown in SF 6 . For this technique, we present data that demonstrate a 1-sigma jitter of +- 150 ps for a 0.5-MV switch at 80% of its self-breakdown voltage using a low-divergence KrF laser. The other scheme uses additives to the normal dielectric gas, such as tripropylamine, which are selected to undergo resonant two-step ionization in the uv laser field

  19. Breakdown in ZnO Varistors by High Power Electrical Pulses; TOPICAL

    International Nuclear Information System (INIS)

    PIKE, GORDON E.

    2001-01-01

    This report documents an investigation of irreversible electrical breakdown in ZnO varistors due to short pulses of high electric field and current density. For those varistors that suffer breakdown, there is a monotonic, pulse-by-pulse degradation in the switching electric field. The electrical and structural characteristics of varistors during and after breakdown are described qualitatively and quantitatively. Once breakdown is nucleated, the degradation typically follows a well-defined relationship between the number of post-initiation pulses and the degraded switching voltage. In some cases the degraded varistor has a remnant 20(micro)m diameter hollow track showing strong evidence of once-molten ZnO. A model is developed for both electrical and thermal effects during high energy pulsing. The breakdown is assumed to start at one electrode and advance towards the other electrode as a thin filament of conductive material that grows incrementally with each successive pulse. The model is partially validated by experiments in which the varistor rod is cut at several different lengths from the electrode. Invariably one section of the cut varistor has a switching field that is not degraded while the other section(s) are heavily degraded. Based on the experiments and models of behavior during breakdown, some speculations about the nature of the nucleating mechanism are offered in the last section

  20. Voltage generators of high voltage high power accelerators

    International Nuclear Information System (INIS)

    Svinin, M.P.

    1981-01-01

    High voltage electron accelerators are widely used in modern radiation installations for industrial purposes. In the near future further increasing of their power may be effected, which enables to raise the efficiency of the radiation processes known and to master new power-consuming production in industry. Improvement of HV generators by increasing their power and efficiency is one of many scientific and engineering aspects the successful solution of which provides further development of these accelerators and their technical parameters. The subject is discussed in detail. (author)

  1. Source of high-voltage power supply for ozone generators at glow discharge

    International Nuclear Information System (INIS)

    Bruev, A.A.; Golota, V.I.; Zavada, L.M.; Taran, G.V.

    2000-01-01

    High-voltage power supply source on quasi-resonance inverter base which works at direct current regime is described. This source forms 20 kV voltage with 0 - 10 mA current regulation. It protects the source from current break-downs and feeds ozone generators at glow discharge

  2. Experimental Study on High Electrical Breakdown of Water Dielectric

    International Nuclear Information System (INIS)

    Zhang Zicheng; Zhang Jiande; Yang Jianhua

    2005-01-01

    By means of a coaxial apparatus, pressurized water breakdown experiments with microsecond charging have been carried out with different surface roughness of electrodes and different ethylene glycol concentrations of ethylene glycol/water mixture. The experimental results about the breakdown stress and the effective time are presented. The breakdown stress is normalized to the situation that the effective time is transformed to 1 μs and analyzed. The conclusions are as follows: (1) the breakdown stress formula is modified to E = 0.561M A -1/10 t eff -1/N P 1/8 ; (2) the coefficient M is significantly increased by surface polishing and ethylene glycol additive; (3) it is accumulative for the capacity of improving electrical breakdown strength for surface polishing, ethylene glycol additive, and pressurization, of which pressurization is the most effective method; (4) the highest stress of 235.5 kV/cm is observed in ethylene glycol/water mixture with an ethylene glycol concentration of 80% at a hydrostatic pressure of 1215.9 kPa and is about one time greater than that in pure water at constant pressure; (5) for pressurization and surface polishing, the primary mechanism to improve the breakdown strength of water dielectric is the increase in the breakdown time delay. Research results indicate great potential in the application of the high power pulse conditioning system of water dielectric

  3. A compact, all solid-state LC high voltage generator.

    Science.gov (United States)

    Fan, Xuliang; Liu, Jinliang

    2013-06-01

    LC generator is widely applied in the field of high voltage generation technology. A compact and all solid-state LC high voltage generator based on saturable pulse transformer is proposed in this paper. First, working principle of the generator is presented. Theoretical analysis and circuit simulation are used to verify the design of the generator. Experimental studies of the proposed LC generator with two-stage main energy storage capacitors are carried out. And the results show that the proposed LC generator operates as expected. When the isolation inductance is 27 μH, the output voltage is 1.9 times larger than the charging voltage on single capacitor. The multiplication of voltages is achieved. On the condition that the primary energy storage capacitor is charged to 857 V, the output voltage of the generator can reach to 59.5 kV. The step-up ratio is nearly 69. When self breakdown gas gap switch is used as main switch, the rise time of the voltage pulse on load resistor is 8.7 ns. It means that the series-wound inductance in the discharging circuit is very small in this system. This generator can be employed in two different applications.

  4. Advances in high voltage insulation and arc interruption in SF6 and vacuum

    CERN Document Server

    Maller, V N

    1982-01-01

    Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

  5. Study of the degradation of the breakdown voltage of a super-junction power MOSFET due to charge imbalance

    International Nuclear Information System (INIS)

    Kondekar, Pravin N.; Oh, Hwan-Sool; Kim, Young-Beom

    2006-01-01

    In this research, we analytically designed a super-junction (SJ) structure and used a simulation tool to study its off-state charge imbalance behavior. In the case of a SJ MOSFET (CoolMOS TM ), designed for the lowest specific on- resistance R on , the MOS part of the transistor (channel region) affected the symmetry, creating a charge imbalance; in addition to this, the imbalance in the SJ drift layer, which was inherently due to limitations in the fabrication process was simulated by varying the doping density of the pillars up to 10 %. The underlying physical mechanisms responsible for the reduction of the breakdown voltage (BV) were investigated in detail by using the electric field profiles and potential contours. The effect of varying the junction depth of a p-body/well and the cell pitch on the breakdown voltage was also analyzed. The trade off between BV sensitivity and specific R on was also investigated.

  6. High voltage load resistor array

    Science.gov (United States)

    Lehmann, Monty Ray [Smithfield, VA

    2005-01-18

    A high voltage resistor comprising an array of a plurality of parallel electrically connected resistor elements each containing a resistive solution, attached at each end thereof to an end plate, and about the circumference of each of the end plates, a corona reduction ring. Each of the resistor elements comprises an insulating tube having an electrode inserted into each end thereof and held in position by one or more hose clamps about the outer periphery of the insulating tube. According to a preferred embodiment, the electrode is fabricated from stainless steel and has a mushroom shape at one end, that inserted into the tube, and a flat end for engagement with the end plates that provides connection of the resistor array and with a load.

  7. A Study on Gas Insulation Characteristics for Design Optimization of High Voltage Power Apparatus

    Energy Technology Data Exchange (ETDEWEB)

    Kim, I S; Kim, M K; Seo, K S; Moon, I W; Choi, C K [Korea Electrotechnology Research Institute (Korea, Republic of)

    1996-12-01

    This study aim of obtaining the basic data for gas insulation in the high voltage apparatus and for investigating the breakdown characteristics in uniform field and non-uniform which the geometric construction in the practical power apparatus. In this study, the research results on the insulation technology published earlier are reviewed and the basic data for an optimum design of a high voltage apparatus are obtained thorough the experiment and computer simulation by using a uniform field. The main result are summarized as follows: (A) Investigation on the insulation technology in a large-capacity power apparatus. (B) Investigation on the breakdown characteristics in particle contaminated condition. (C) Investigation on the design in computer simulation. (D) Investigation on the simulation technology of breakdown characteristics. (E) Investigation on breakdown characteristics in the nonuniform field and experiment. (author). refs., figs., tabs.

  8. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    International Nuclear Information System (INIS)

    Onufriyev, Valery V.

    2001-01-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient--γ i with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure p cs ) and cathode temperature T k is constant too (U b =constant with T k =constant and p cs =constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-p cs and cathode temperature-T k and is independent on IEG length--Δ ieg . On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly--the region of excited atoms--''Aston glow.''

  9. Experimental investigation of high temperature high voltage thermionic diode for the space power nuclear reactor

    Science.gov (United States)

    Onufriyev, Valery. V.

    2001-02-01

    It is well known that the rise of arc from the dense glow discharge is connected with the thermion and secondary processes on the cathode surface (Granovsky, 1971; Leob, 1953; Engel, 1935). First model of breakdown of the cathode layer is connected with the increase of the cathode temperature in consequence of the ion bombardment that leads to the grows its thermo-emissive current. Other model shows the main role of the secondary effects on the cathode surface-the increase of the secondary ion emission coefficient-γi with the grows of glow discharge voltage. But the author of this investigation work of breakdown in Cs vapor (a transmission the glow discharge into self-maintaining arc discharge) discovered the next peculiarity: the value of breakdown voltage is constant when the values of vapor temperature (its pressure pcs) and cathode temperature Tk is constant too (Ub=constant with Tk=constant and pcs=constant) and it is not a statistical value (Onufryev, Grishin, 1996) (that was observed in gas glow discharges other authors (Granovsky, 1971; Leob, 1953; Engel, 1935)). The investigations of thermion high voltage high temperature diode (its breakdown characteristics in closed state and voltage-current characteristics in disclosed state) showed that the value of the breakdown voltage is depended on the vapor pressure in inter-electrode gap (IEG)-pcs and cathode temperature-Tk and is independent on IEG length-Δieg. On this base it was settled that the main role in transition of glow discharge to self-maintaining arc discharge plays an ion cathode layer but more exactly-the region of excited atoms-``Aston glow.'' .

  10. Organic dielectrics in high voltage cables

    Energy Technology Data Exchange (ETDEWEB)

    Vermeer, J

    1962-03-01

    It appears that the limit has been reached in the applicability of oil-impregnated paper as the dielectric for ehv cables, as with rising voltages the prevention of conductor losses becomes increasingly difficult, while the dielectric losses of the insulation, increasing as the square of the voltage, contribute to a greater extent to the temperature rise of the conductor. The power transmitting capacity of ehv cables reaches a maximum at 500 to 600 kV for these reasons. Apart from artificial cooling, a substantial improvement can be obtained only with the use of insulating materials with much lower dielectric losses; these can moreover be applied with a smaller wall thickness, but this means higher field strengths. Synthetic polymer materials meet these requirements but can be used successfully only in the form of lapped film tapes impregnated with suitable liquids. The electrical properties of these heterogeneous dielectrics, in particular, their impulse breakdown strengths are studied in detail.

  11. A novel partial SOI LDMOSFET with periodic buried oxide for breakdown voltage and self heating effect enhancement

    Science.gov (United States)

    Jamali Mahabadi, S. E.; Rajabi, Saba; Loiacono, Julian

    2015-09-01

    In this paper a partial silicon on insulator (PSOI) lateral double diffused metal oxide semiconductor field effect transistor (LDMOSFET) with periodic buried oxide layer (PBO) for enhancing breakdown voltage (BV) and self-heating effects (SHEs) is proposed for the first time. This new structure is called periodic buried oxide partial silicon on insulator (PBO-PSOI). In this structure, periodic small pieces of SiO2 were used as the buried oxide (BOX) layer in PSOI to modulate the electric field in the structure. It was demonstrated that the electric field is distributed more evenly by producing additional electric field peaks, which decrease the common peaks near the drain and gate junctions in the PBO-PSOI structure. Hence, the area underneath the electric field curve increases which leads to higher breakdown voltage. Also a p-type Si window was introduced in the source side to force the substrate to share the vertical voltage drop, leading to a higher vertical BV. Furthermore, the Si window under the source and those between periodic pieces of SiO2 create parallel conduction paths between the active layer and substrate thereby alleviating the SHEs. Simulations with the two dimensional ATLAS device simulator from the Silvaco suite of simulation tools show that the BV of PBO-PSOI is 100% higher than that of the conventional partial SOI (C-PSOI) structure. Furthermore the PBO-PSOI structure alleviates SHEs to a greater extent than its C-PSOI counterpart. The achieved drain current for the PBO-PSOI structure (100 μA), at drain-source voltage of VDS = 100 V and gate-source voltage of VGS = 25 V, is shown to be significantly larger than that in C-PSOI and fully depleted SOI (FD-SOI) structures (87 μA and 51 μA respectively). Drain current can be further improved at the expense of BV by increasing the doping of the drift region.

  12. Disintegration of rocks based on magnetically isolated high voltage discharge

    Science.gov (United States)

    He, Mengbing; Jiang, Jinbo; Huang, Guoliang; Liu, Jun; Li, Chengzu

    2013-02-01

    Recently, a method utilizing pulsed power technology for disintegration of rocks arouses great interest of many researchers. In this paper, an improved method based on magnetic switch and the results shown that the uniform dielectrics like plastic can be broken down in water is presented, and the feasible mechanism explaining the breakdown of solid is proposed and proved experimentally. A high voltage pulse of 120 kV, rise time 0.2 μs was used to ignite the discharging channel in solids. When the plasma channel is formed in the solid, the resistance of the channel is quiet small; even if a relatively low voltage is applied on the channel on this occasion, it will produce high current to heat the plasma channel rapidly, and eventually disintegrate the solids. The feasibility of promising industrial application in the drilling and demolition of natural and artificial solid materials by the method we presented is verified by the experiment result in the paper.

  13. On locally uniformly linearizable high breakdown location and scale functionals

    NARCIS (Netherlands)

    Davies, P.L.

    1998-01-01

    This article gives two constructions of a weighted mean which has a large domain, is affinely equivariant, has a locally high breakdown point and is locally uniformly linearizable. One construction is based on $M$-functionals with smooth defining $\\psi$- and $\\chi$ -functions which are used to

  14. High voltage MOSFET switching circuit

    Science.gov (United States)

    McEwan, Thomas E.

    1994-01-01

    The problem of source lead inductance in a MOSFET switching circuit is compensated for by adding an inductor to the gate circuit. The gate circuit inductor produces an inductive spike which counters the source lead inductive drop to produce a rectangular drive voltage waveform at the internal gate-source terminals of the MOSFET.

  15. High-voltage engineering and testing

    CERN Document Server

    Ryan, Hugh M

    2013-01-01

    This 3rd edition of High Voltage Engineering Testing describes strategic developments in the field and reflects on how they can best be managed. All the key components of high voltage and distribution systems are covered including electric power networks, UHV and HV. Distribution systems including HVDC and power electronic systems are also considered.

  16. Impact of rounded electrode corners on breakdown characteristics of AlGaN/GaN high-electron mobility transistors

    Science.gov (United States)

    Yamazaki, Taisei; Asubar, Joel T.; Tokuda, Hirokuni; Kuzuhara, Masaaki

    2018-05-01

    We investigated the impact of rounded electrode corners on the breakdown characteristics of AlGaN/GaN high-electron mobility transistors. For standard reference devices, catastrophic breakdown occurred predominantly near the sharp electrode corners. By introducing a rounded-electrode architecture, premature breakdown at the corners was mitigated. Moreover, the rate of breakdown voltage (V BR) degradation with an increasing gate width (W G) was significantly lower for devices with rounded corners. When W G was increased from 100 µm to 10 mm, the V BR of the reference device dropped drastically, from 1,200 to 300 V, whereas that of the rounded-electrode device only decreased to a respectable value of 730 V.

  17. Electric breakdown of high polymer insulating materials at cryogenic temperature

    International Nuclear Information System (INIS)

    Kim, Sanhyon; Yoshino, Katsumi

    1985-01-01

    Cryogenic properties : temperature dependence of E sub(b) and effects of media upon E sub(b) were investigated on several high polymers. Temperature conditions were provided by liquid He (4.2 K), liquid N 2 (77 K) and cryogen (dry ice-methyl alcohol, 194 K). Silicone oil was used also at ambient temperature and elevated temperature. Polymer film coated with gold by vacuum evaporation was placed in cryostat, and high tension from pulse generator was applied to the film. Dielectric breakdowns were detected by oscilloscope and observed visually. The results of experiment are summerized as follow. (1) E sub(b) of film in He is affected by medium remarkably, and covering with 3-methyl pentane is effective for increasing E sub(b). (2) Temperature dependence of E sub(b) was not recognized in cryogenic temperature below liquid N 2 . (3) Temperature characteristic of E sub(b) changes considerably at the critical temperature T sub(c), and T sub(c) is dependent on material. (4) Strength against dielectric breakdown under cryogenic temperature is not affected by bridging caused by irradiation of electron beam. (5) Dielectric breakdown is thought to be caused by electronic process such as electron avalanche. Consequently, for designing insulation for the temperature below liquid He, insulation design for liquid N 2 is thought to be sufficient. However, the degradation and breakdown by mechanical stress under cryogenic temperature must be taken into consideration. (Ishimitsu, A.)

  18. Impulse breakdown of liquids

    CERN Document Server

    Ushakov, Vasily Y

    2007-01-01

    The book describes the main physical processes and phenomena in pulsed electric breakdown. The knowledge and the control of the electric breakdown of liquids is important not only for the insulation inside power systems but it is also used for the creation and information of high voltage and high current pulses. Such high-voltage micro- and nanosecond pulses find wide application in experimental physics, electro discharge technology, physics of dielectrics, radar detection and ranging, high-speed photography. The nature of charge carriers, mechanism of formation and evolution of the gas phase,

  19. Design consideration of high voltage Ga2O3 vertical Schottky barrier diode with field plate

    Science.gov (United States)

    Choi, J.-H.; Cho, C.-H.; Cha, H.-Y.

    2018-06-01

    Gallium oxide (Ga2O3) based vertical Schottky barrier diodes (SBDs) were designed for high voltage switching applications. Since p-type Ga2O3 epitaxy growth or p-type ion implantation technique has not been developed yet, a field plate structure was employed in this study to maximize the breakdown voltage by suppressing the electric field at the anode edge. TCAD simulation was used for the physical analysis of Ga2O3 SBDs from which it was found that careful attention must be paid to the insulator under the field plate. Due to the extremely high breakdown field property of Ga2O3, an insulator with both high permittivity and high breakdown field must be used for the field plate formation.

  20. Time isolation high-voltage impulse generator

    International Nuclear Information System (INIS)

    Chodorow, A.M.

    1975-01-01

    Lewis' high-voltage impulse generator is analyzed in greater detail, demonstrating that voltage between adjacent nodes can be equalized by proper selection of parasitic impedances. This permits improved TEM mode propagation to a matched load, with more faithful source waveform preservation

  1. High voltage electricity installations a planning perspective

    CERN Document Server

    Jay, Stephen Andrew

    2006-01-01

    The presence of high voltage power lines has provoked widespread concern for many years. High Voltage Electricity Installations presents an in-depth study of policy surrounding the planning of high voltage installations, discussing the manner in which they are percieved by the public, and the associated environmental issues. An analysis of these concerns, along with the geographical, environmental and political influences that shape their expression, is presented. Investigates local planning policy in an area of the energy sector that is of highly topical environmental and public concern Cover

  2. Improvement in the Design of Metal-Ceramic High Voltage Feedthroughs for use in High Energy Particle Accelerators

    CERN Document Server

    Weterings, W

    1999-01-01

    Large high-voltage devices operate in particle accelerators to steer charged particles in the desired direction. Solid and hollow rods of sintered alumina are used as insulating supports and high-voltage feedthroughs to power the electrodes of these electrostatic systems. The performance of the systems is often limited by voltage breakdown along the surface of the ceramic insulator (so-called surface flashover) or discharge between feedthrough and vacuum tank, which can lead to significant disruptions in terms of overall machine efficiency. Available results on the influence of the mechanical preparation, thermal history and particular cleaning techniques on commercially obtainable alumina samples have been studied in order to investigate possibilities for better preparation methodology of the insulating supports. Also the influence of the relative position of the feedthrough inside the vacuum tank on the high-voltage breakdown behaviour has been studied. This paper describes the theoretical and practical bac...

  3. Detecting Faults In High-Voltage Transformers

    Science.gov (United States)

    Blow, Raymond K.

    1988-01-01

    Simple fixture quickly shows whether high-voltage transformer has excessive voids in dielectric materials and whether high-voltage lead wires too close to transformer case. Fixture is "go/no-go" indicator; corona appears if transformer contains such faults. Nests in wire mesh supported by cap of clear epoxy. If transformer has defects, blue glow of corona appears in mesh and is seen through cap.

  4. High frequency relay protection channels on super high voltage lines

    Energy Technology Data Exchange (ETDEWEB)

    Mikutskii, G V

    1964-08-01

    General aspects of high voltage transmission line design are discussed. The relationships between line voltage and length and line dimensions and power losses are explained. Electrical interference in the line is classified under three headings: interference under normal operating conditions, interference due to insulation faults, and interference due to variations in operating conditions of the high-voltage network.

  5. Prototype high voltage bushing: Configuration to its operational demonstration

    Energy Technology Data Exchange (ETDEWEB)

    Shah, Sejal, E-mail: sshah@iter-india.org [ITER-India, Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Sharma, D. [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Parmar, D.; Tyagi, H.; Joshi, K.; Shishangiya, H.; Bandyopadhyay, M.; Rotti, C.; Chakraborty, A. [ITER-India, Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2016-12-15

    High Voltage Bushing (HVB) is the key component of Diagnostic Neutral Beam (DNB) system of ITER as it provides access to high voltage electrical, hydraulic, gas and diagnostic feedlines to the beam source with isolation from grounded vessel. HVB also provides primary vacuum confinement for the DNB system. Being Safety Important Class (SIC) component of ITER, it involves several configurational, technological and operational challenges. To ensure its operational performance & reliability, particularly electrostatic behavior, half scale down Prototype High Voltage Bushing (PHVB) is designed considering same design criteria of DNB HVB. Design optimization has been carried out followed by finite element (FE) analysis to obtain DNB HVB equivalent electric stress on different parts of PHVB, taking into account all design, manufacturing & space constraints. PHVB was tested up to 60 kV without breakdown, which validates its design for the envisaged operation of 50 kV DC. This paper presents the design of PHVB, FEA validation, manufacturing constraints, experimental layout with interfacing auxiliary systems and operational results related to functional performance.

  6. Nested high voltage generator/particle accelerator

    International Nuclear Information System (INIS)

    Adler, R.J.

    1992-01-01

    This patent describes a modular high voltage particle accelerator having an emission axis and an emission end, the accelerator. It comprises: a plurality of high voltage generators in nested adjacency to form a nested stack, each the generator comprising a cup-like housing having a base and a tubular sleeve extending from the base, a primary transformer winding encircling the nested stack; a secondary transformer winding between each adjacent pair of housings, magnetically linked to the primary transformer winding through the gaps; a power supply respective to each of the secondary windings converting alternating voltage from its respective secondary winding to d.c. voltage, the housings at the emission end forming a hollow throat for particle acceleration, a vacuum seal at the emission end of the throat which enables the throat to be evacuated; a particle source in the thrond power means to energize the primary transformer winding

  7. An LOD with improved breakdown voltage in full-frame CCD devices

    Science.gov (United States)

    Banghart, Edmund K.; Stevens, Eric G.; Doan, Hung Q.; Shepherd, John P.; Meisenzahl, Eric J.

    2005-02-01

    In full-frame image sensors, lateral overflow drain (LOD) structures are typically formed along the vertical CCD shift registers to provide a means for preventing charge blooming in the imager pixels. In a conventional LOD structure, the n-type LOD implant is made through the thin gate dielectric stack in the device active area and adjacent to the thick field oxidation that isolates the vertical CCD columns of the imager. In this paper, a novel LOD structure is described in which the n-type LOD impurities are placed directly under the field oxidation and are, therefore, electrically isolated from the gate electrodes. By reducing the electrical fields that cause breakdown at the silicon surface, this new structure permits a larger amount of n-type impurities to be implanted for the purpose of increasing the LOD conductivity. As a consequence of the improved conductance, the LOD width can be significantly reduced, enabling the design of higher resolution imaging arrays without sacrificing charge capacity in the pixels. Numerical simulations with MEDICI of the LOD leakage current are presented that identify the breakdown mechanism, while three-dimensional solutions to Poisson's equation are used to determine the charge capacity as a function of pixel dimension.

  8. Breakdown voltage at the electric terminals of GCFR-core flow test loop fuel rod simulators in helium and air

    International Nuclear Information System (INIS)

    Huntley, W.R.; Conley, T.B.

    1979-12-01

    Tests were performed to determine the ac and dc breakdown voltage at the terminal ends of a fuel rod simulator (FRS) in helium and air atmospheres. The tests were performed at low pressures (1 to 2 atm) and at temperatures from 20 to 350 0 C (68 to 660 0 F). The area of concern was the 0.64-mm (0.025-in.) gap between the coaxial conductor of the FRS and the sheaths of the four internal thermocouples as they exit the FRS. The tests were prformed to ensure a sufficient safety margin during Core Flow Test Loop (CFTL) operations that require potentials up to 350 V ac at the FRS terminals. The primary conclusion from the test results is that the CFTL cannot be operated safely if the terminal ends of the FRSs are surrounded by a helium atmosphere but can be operated safely in air

  9. Design considerations and data for gas-insulated high voltage structures

    International Nuclear Information System (INIS)

    Hopkins, D.B.

    1975-11-01

    This paper is intended to benefit the person faced with the occasional task of designing gas insulated high-voltage structures or spark gaps and who must decide upon the proper geometry, spacings, gas type, and pressure for reliable voltage-holding. An approach is presented along with a summary of how various factors affect voltage breakdown. The design procedures described apply to situations where the influence of nearby insulators is negligible. The accuracy of the data is estimated to be within 10 to 15 percent, a value usually attained in practice only when one follows the cautionary advice discussed in the paragraphs on materials preparation, gas properties, and conditioning

  10. High-Voltage Isolation Transformer

    Science.gov (United States)

    Clatterbuck, C. H.; Ruitberg, A. P.

    1985-01-01

    Arcing and field-included surface erosion reduced by electrostatic shields around windings and ferromagnetic core of 80-kilovolt isolation transformer. Fabricated from high-resistivity polyurethane-based material brushed on critical surfaces, shields maintained at approximately half potential difference of windings.

  11. Enhancement of breakdown voltage for fully-vertical GaN-on-Si p-n diode by using strained layer superlattice as drift layer

    Science.gov (United States)

    Mase, Suguru; Hamada, Takeaki; Freedsman, Joseph J.; Egawa, Takashi

    2018-06-01

    We have demonstrated a vertical GaN-on-Si p-n diode with breakdown voltage (BV) as high as 839 V by using a low Si-doped strained layer superlattice (SLS). The p-n vertical diode fabricated by using the n‑-SLS layer as a part of the drift layer showed a remarkable enhancement in BV, when compared with the conventional n‑-GaN drift layer of similar thickness. The vertical GaN-on-Si p-n diodes with 2.3 μm-thick n‑-GaN drift layer and 3.0 μm-thick n‑-SLS layer exhibited a differential on-resistance of 4.0 Ω · cm2 and a BV of 839 V.

  12. 76 FR 70721 - Voltage Coordination on High Voltage Grids; Notice of Staff Workshop

    Science.gov (United States)

    2011-11-15

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Staff Workshop Take notice that the Federal Energy Regulatory Commission will hold a Workshop on Voltage Coordination on High Voltage Grids on Thursday, December 1, 2011...

  13. An analytical model for the vertical electric field distribution and optimization of high voltage REBULF LDMOS

    International Nuclear Information System (INIS)

    Hu Xia-Rong; Lü Rui

    2014-01-01

    In this paper, an analytical model for the vertical electric field distribution and optimization of a high voltage-reduced bulk field (REBULF) lateral double-diffused metal—oxide-semiconductor (LDMOS) transistor is presented. The dependences of the breakdown voltage on the buried n-layer depth, thickness, and doping concentration are discussed in detail. The REBULF criterion and the optimal vertical electric field distribution condition are derived on the basis of the optimization of the electric field distribution. The breakdown voltage of the REBULF LDMOS transistor is always higher than that of a single reduced surface field (RESURF) LDMOS transistor, and both analytical and numerical results show that it is better to make a thick n-layer buried deep into the p-substrate. (interdisciplinary physics and related areas of science and technology)

  14. Preparation Nano-Structure Polytetrafluoroethylene (PTFE Functional Film on the Cellulose Insulation Polymer and Its Effect on the Breakdown Voltage and Hydrophobicity Properties

    Directory of Open Access Journals (Sweden)

    Jian Hao

    2018-05-01

    Full Text Available Cellulose insulation polymer is an important component of oil-paper insulation, which is widely used in power transformer. The weight of the cellulose insulation polymer materials is as high as tens of tons in the larger converter transformer. Excellent performance of oil-paper insulation is very important for ensuring the safe operation of larger converter transformer. An effective way to improve the insulation and the physicochemical property of the oil impregnated insulation pressboard/paper is currently a popular research topic. In this paper, the polytetrafluoroethylene (PTFE functional film was coated on the cellulose insulation pressboard by radio frequency (RF magnetron sputtering to improve its breakdown voltage and the hydrophobicity properties. X-ray photoelectron spectroscopy (XPS results show that the nano-structure PTFE functional film was successfully fabricated on the cellulose insulation pressboard surface. The scanning electron microscopy (SEM and X-ray diffraction (XRD present that the nanoscale size PTFE particles were attached to the pressboard surface and it exists in the amorphous form. Atomic force microscopy (AFM shows that the sputtered pressboard surface is still rough. The rough PTFE functional film and the reduction of the hydrophilic hydroxyl of the surface due to the shielding effect of PTFE improve the breakdown and the hydrophobicity properties of the cellulose insulation pressboard obviously. This paper provides an innovative way to improve the performance of the cellulose insulation polymer.

  15. High-voltage test and measuring techniques

    CERN Document Server

    Hauschild, Wolfgang

    2014-01-01

    It is the intent of this book to combine high-voltage (HV) engineering with HV testing technique and HV measuring technique. Based on long-term experience gained by the authors as lecturer and researcher as well as member in international organizations, such as IEC and CIGRE, the book will reflect the state of the art as well as the future trends in testing and diagnostics of HV equipment to ensure a reliable generation, transmission and distribution of electrical energy. The book is intended not only for experts but also for students in electrical engineering and high-voltage engineering.

  16. Modular high voltage power supply for chemical analysis

    Science.gov (United States)

    Stamps, James F [Livermore, CA; Yee, Daniel D [Dublin, CA

    2008-07-15

    A high voltage power supply for use in a system such as a microfluidics system, uses a DC-DC converter in parallel with a voltage-controlled resistor. A feedback circuit provides a control signal for the DC-DC converter and voltage-controlled resistor so as to regulate the output voltage of the high voltage power supply, as well as, to sink or source current from the high voltage supply.

  17. Transmission of power at high voltages

    Energy Technology Data Exchange (ETDEWEB)

    Lane, F J

    1963-01-01

    High voltage transmission is considered to be concerned with circuits and systems operating at or above 132 kV. While the general examination is concerned with ac transmission, dc systems are also included. The choice of voltage for a system will usually involve hazardous assessments of the future requirements of industry, commerce and a changing population. Experience suggests that, if the estimated economic difference between two voltages is not significant, there is good reason to choose the higher voltage, as this will make the better provision for unexpected future expansion. Two principal functions served by transmission circuits in a supply system are: (a) the transportation of energy in bulk from the generator to the reception point in the distribution system; and (b) the interconnection and integration of the generating plant and associated loads. These functions are considered and various types of system are discussed in terms of practicability, viability, quality and continuity of supply. Future developments requiring transmission voltages up to 750 kV will raise many problems which are in the main empirical. Examples are given of the type of problem envisaged and it is suggested that these can only be partially solved by theory and model operation.

  18. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based...

  19. Microparticles in high-voltage accelerator tubes

    International Nuclear Information System (INIS)

    Griffith, G.L.; Eastham, D.A.

    1979-01-01

    Microparticles with radii greater than 2 μm have been observed in a high voltage vacuum accelerator tube. The charge acquired by most of the particles is similar to the contact charging of a conducting sphere on a plane. (author)

  20. An Inexpensive Source of High Voltage

    Science.gov (United States)

    Saraiva, Carlos

    2012-01-01

    As a physics teacher I like recycling old apparatus and using them for demonstrations in my classes. In physics laboratories in schools, sources of high voltage include induction coils or electronic systems that can be bought from companies that sell lab equipment. But these sources can be very expensive. In this article, I will explain how you…

  1. Junction depth dependence of breakdown in silicon detector diodes

    International Nuclear Information System (INIS)

    Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

    1996-01-01

    The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

  2. Reliability of supply of switchgear for auxiliary low voltage in substations extra high voltage to high voltage

    Directory of Open Access Journals (Sweden)

    Perić Dragoslav M.

    2015-01-01

    Full Text Available Switchgear for auxiliary low voltage in substations (SS of extra high voltages (EHV to high voltage (HV - SS EHV/HV kV/kV is of special interest for the functioning of these important SS, as it provides a supply for system of protection and other vital functions of SS. The article addresses several characteristic examples involving MV lines with varying degrees of independence of their supply, and the possible application of direct transformation EHV/LV through special voltage transformers. Auxiliary sources such as inverters and diesel generators, which have limited power and expensive energy, are also used for the supply of switchgear for auxiliary low voltage. Corresponding reliability indices are calculated for all examples including mean expected annual engagement of diesel generators. The applicability of certain solutions of switchgear for auxiliary low voltage SS EHV/HV, taking into account their reliability, feasibility and cost-effectiveness is analyzed too. In particular, the analysis of applications of direct transformation EHV/LV for supply of switchgear for auxiliary low voltage, for both new and existing SS EHV/HV.

  3. 30 CFR 75.804 - Underground high-voltage cables.

    Science.gov (United States)

    2010-07-01

    ... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution § 75.804 Underground high-voltage cables. (a) Underground high-voltage cables used in resistance... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Underground high-voltage cables. 75.804 Section...

  4. 30 CFR 75.813 - High-voltage longwalls; scope.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage longwalls; scope. 75.813 Section... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage Distribution High-Voltage Longwalls § 75.813 High-voltage longwalls; scope. Sections 75.814 through 75.822 of this...

  5. Space charge inhibition effect of nano-Fe{sub 3}O{sub 4} on improvement of impulse breakdown voltage of transformer oil based on improved Kerr optic measurements

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Qing, E-mail: yangqing@cqu.edu.cn; Yu, Fei; Sima, Wenxia [State Key Laboratory of Power Transmission Equipment & System Security and New Technology, Chongqing University, Shapingba District, Chongqing, 400044 (China); Zahn, Markus [Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139 (United States)

    2015-09-15

    Transformer oil-based nanofluids (NFs) with 0.03 g/L Fe{sub 3}O{sub 4} nanoparticle content exhibit 11.2% higher positive impulse breakdown voltage levels than pure transformer oils. To study the effects of the Fe{sub 3}O{sub 4} nanoparticles on the space charge in transformer oil and to explain why the nano-modified transformer oil exhibits improved impulse breakdown voltage characteristics, the traditional Kerr electro-optic field mapping technique is improved by increasing the length of the parallel-plate electrodes and by using a photodetector array as a high light sensitivity device. The space charge distributions of pure transformer oil and of NFs containing Fe{sub 3}O{sub 4} nanoparticles can be measured using the improved Kerr electro-optic field mapping technique. Test results indicate a significant reduction in space charge density in the transformer oil-based NFs with the Fe{sub 3}O{sub 4} nanoparticles. The fast electrons are captured by the nanoparticles and are converted into slow-charged particles in the NFs, which then reduce the space charge density and result in a more uniform electric field distribution. Streamer propagation in the NFs is also obstructed, and the breakdown strengths of the NFs under impulse voltage conditions are also improved.

  6. High voltage pulse generator. [Patent application

    Science.gov (United States)

    Fasching, G.E.

    1975-06-12

    An improved high-voltage pulse generator is described which is especially useful in ultrasonic testing of rock core samples. An N number of capacitors are charged in parallel to V volts and at the proper instance are coupled in series to produce a high-voltage pulse of N times V volts. Rapid switching of the capacitors from the paralleled charging configuration to the series discharging configuration is accomplished by using silicon-controlled rectifiers which are chain self-triggered following the initial triggering of the first rectifier connected between the first and second capacitors. A timing and triggering circuit is provided to properly synchronize triggering pulses to the first SCR at a time when the charging voltage is not being applied to the parallel-connected charging capacitors. The output voltage can be readily increased by adding additional charging networks. The circuit allows the peak level of the output to be easily varied over a wide range by using a variable autotransformer in the charging circuit.

  7. Radio and television interference caused by corona discharges from high-voltage transmission lines

    International Nuclear Information System (INIS)

    Sarmadi, M.

    1996-01-01

    Increase in power utility loads in industrialized countries, as well as developing countries, demands a higher level of transmission line voltage. Radio interference (RI) problems have been determined to be a limiting factor in selecting the size of transmission line conductors. Transmission line noise is primarily caused by corona discharges in the immediate vicinity of the conductor. It has been observed that discharges occur during both half-cycles of the applied voltage, but positive corona is usually predominant at AM radio frequencies range with practical high-voltage and extra high-voltage transmission lines. The corona radio noise effect is highly dependent upon the presence of particles on the surface of the conductor and the increase of the electrical gradient beyond the breakdown value of the air. Therefore, corona radio noise varies significantly with the weather and atmospheric conditions and generally increases by 10 to 30 dB in foul weather

  8. Effect of resin composition to the electrical and mechanical properties of high voltage insulator material

    International Nuclear Information System (INIS)

    Totok Dermawan; Elin Nuraini; Suyamto

    2012-01-01

    A solid insulator manufacture of resins for high voltage with a variation of resin and hardener composition has been made. The purpose of research to know electrical and mechanical properties of high voltage insulator material of resin. To determine its electric properties, the material is tested its breakdown voltage and the flashover voltage that occurred on the surface. While to determine the mechanical properties were tested by measuring its strength with a tensile test. From testing with variety of mixed composition it is known that for composition between hardener and resin of 1 : 800 has most advantageous properties because it has good strength with a tensile strength of 19.86 MPa and enough high dielectric strength of 43.2 kV / mm). (author)

  9. Stress relief of ceramic components in high voltage assemblies. Final report

    International Nuclear Information System (INIS)

    Heinen, R.J.

    1979-02-01

    Two types of ceramic packages were evaluated to determine the effectiveness of encapsulating the ceramic components in beta eucryptite filled epoxy. The requirements (no high voltage breakdown, no ceramic cracking, and no encapsulant cracking) were met by the spark gap assembly, but the sprytron assembly had cracking in the encapsulant after thermal cycling. The encapsulation of the ceramic component in beta eucryptite filled epoxy with a stress decoupling material selectively applied in the stress concentrated areas were used to prevent cracking in the sprytron encapsulant. This method is proposed as the standard encapsulation process for high voltage ceramic components

  10. Properties of Polymer Composites Used in High-Voltage Applications

    Directory of Open Access Journals (Sweden)

    Ilona Pleşa

    2016-04-01

    Full Text Available The present review article represents a comprehensive study on polymer micro/nanocomposites that are used in high-voltage applications. Particular focus is on the structure-property relationship of composite materials used in power engineering, by exploiting fundamental theory as well as numerical/analytical models and the influence of material design on electrical, mechanical and thermal properties. In addition to describing the scientific development of micro/nanocomposites electrical features desired in power engineering, the study is mainly focused on the electrical properties of insulating materials, particularly cross-linked polyethylene (XLPE and epoxy resins, unfilled and filled with different types of filler. Polymer micro/nanocomposites based on XLPE and epoxy resins are usually used as insulating systems for high-voltage applications, such as: cables, generators, motors, cast resin dry-type transformers, etc. Furthermore, this paper includes ample discussions regarding the advantages and disadvantages resulting in the electrical, mechanical and thermal properties by the addition of micro- and nanofillers into the base polymer. The study goals are to determine the impact of filler size, type and distribution of the particles into the polymer matrix on the electrical, mechanical and thermal properties of the polymer micro/nanocomposites compared to the neat polymer and traditionally materials used as insulation systems in high-voltage engineering. Properties such as electrical conductivity, relative permittivity, dielectric losses, partial discharges, erosion resistance, space charge behavior, electric breakdown, tracking and electrical tree resistance, thermal conductivity, tensile strength and modulus, elongation at break of micro- and nanocomposites based on epoxy resin and XLPE are analyzed. Finally, it was concluded that the use of polymer micro/nanocomposites in electrical engineering is very promising and further research work

  11. High Efficiency Power Converter for Low Voltage High Power Applications

    DEFF Research Database (Denmark)

    Nymand, Morten

    The topic of this thesis is the design of high efficiency power electronic dc-to-dc converters for high-power, low-input-voltage to high-output-voltage applications. These converters are increasingly required for emerging sustainable energy systems such as fuel cell, battery or photo voltaic based......, and remote power generation for light towers, camper vans, boats, beacons, and buoys etc. A review of current state-of-the-art is presented. The best performing converters achieve moderately high peak efficiencies at high input voltage and medium power level. However, system dimensioning and cost are often...

  12. High-voltage nanosecond pulse shaper

    International Nuclear Information System (INIS)

    Kapishnikov, N.K.; Muratov, V.M.; Shatanov, A.A.

    1987-01-01

    A high-voltage pulse shaper with an output of up to 250 kV, a base duration of ∼ 10 nsec, and a repetition frequency of 50 pulses/sec is described. The described high-voltage nanosecond pulse shaper is designed for one-orbit extraction of an electron beam from a betatron. A diagram of the pulse shaper, which employs a single-stage generator is shown. The shaping element is a low-inductance capacitor bank of series-parallel KVI-3 (2200 pF at 10 kV) or K15-10 (4700 pF at 31.5 kV) disk ceramic capacitors. Four capacitors are connected in parallel and up to 25 are connected in series

  13. The electric strength of high-voltage transformers insulation at effect of partial dischargers

    International Nuclear Information System (INIS)

    Khoshravan, E.; Zeraatparvar, A.; Gashimov, A.M.; Mehdizadeh, R.N.

    2001-01-01

    Full text : In paper the change of electric strength of high-voltage transformers insulation at the effect of partial discharges with space charge accumulation was investigated. It is revealed that the effect of partial discharges of insulation materials results the reduction of their pulsing electric strength which can restore the own initial value at releasing of saved charge the volume of a material under condition of absence the ineversible structural changes in it. Researches of high-voltage transformers insulation's non-failure operation conditions show, that at increasing of insulation work time in a strong electrical field the reduction of average breakdown voltages with simultaneous increasing of spread in discharge voltage values takes place. It authentically testifies to reduction of short-time discharge voltage of insulation materials during their electrical aging. As the basic reason of insulation electrical aging the partial discharges occurring in gas cavities inside insulation were considered. It is known that the space charges will be formed in insulation elements of high-voltage devices which effects in dielectrical property of these elements including the electric strength and the space charge formation can occur also at partial discharges in an alternating voltage while the service of high-voltage transformers. In the given work the experiments in revealing separate influence partial discharges in pulsing electric strength of insulation materials at presence and at absence inside them the space charge were spent

  14. High-voltage polymeric insulated cables

    Energy Technology Data Exchange (ETDEWEB)

    Ross, A

    1987-01-01

    Reviews developments in high-voltage (here defined as 25 kV, 66 kV and 132 kV) polymeric insulated cables in the UK over the period 1979-1986, with particular reference to the experience of the Eastern Electricity Board. Outlines the background to the adoption of XPLE-insulated solid cable, and the design, testing, terminations, jointing and costs of 25 kV, 66 kV and 132 kV cables.

  15. New perspectives in vacuum high voltage insulation. I. The transition to field emission

    CERN Document Server

    Diamond, W T

    1998-01-01

    Vacuum high-voltage insulation has been investigated for many years. Typically, electrical breakdown occurs between two broad-area electrodes at electric fields 100-1000 times lower than the breakdown field (about 5000 MV/m) between a well-prepared point cathode and a broad-area anode. Explanations of the large differences remain unsatisfactory, usually evoking field emission from small projections on the cathode that are subject to higher peak fields. The field emission then produces secondary effects that lead to breakdown. This article provides a significant resolution to this long standing problem. Field emission is not present at all fields, but typically starts after some process occurs at the cathode surface. Three effects have been identified that produce the transition to field emission: work function changes; mechanical changes produced by the strong electrical forces on the electrode surfaces; and gas desorption from the anode with sufficient density to support an avalanche discharge. Material adso...

  16. Contribution to high voltage matrix switches reliability

    International Nuclear Information System (INIS)

    Lausenaz, Yvan

    2000-01-01

    Nowadays, power electronic equipment requirements are important, concerning performances, quality and reliability. On the other hand, costs have to be reduced in order to satisfy the market rules. To provide cheap, reliability and performances, many standard components with mass production are developed. But the construction of specific products must be considered following these two different points: in one band you can produce specific components, with delay, over-cost problems and eventuality quality and reliability problems, in the other and you can use standard components in a adapted topologies. The CEA of Pierrelatte has adopted this last technique of power electronic conception for the development of these high voltage pulsed power converters. The technique consists in using standard components and to associate them in series and in parallel. The matrix constitutes high voltage macro-switch where electrical parameters are distributed between the synchronized components. This study deals with the reliability of these structures. It brings up the high reliability aspect of MOSFETs matrix associations. Thanks to several homemade test facilities, we obtained lots of data concerning the components we use. The understanding of defects propagation mechanisms in matrix structures has allowed us to put forwards the necessity of robust drive system, adapted clamping voltage protection, and careful geometrical construction. All these reliability considerations in matrix associations have notably allowed the construction of a new matrix structure regrouping all solutions insuring reliability. Reliable and robust, this product has already reaches the industrial stage. (author) [fr

  17. Atomic and molecular physics, physicochemical properties of biologically important structure, and high-voltage research

    International Nuclear Information System (INIS)

    Christophorou, L.G.; Allen, J.D.; Anderson, V.E.

    1976-01-01

    Research in atomic and molecular physics is reported. Studies included: experimental evidence for the existence of a Ramsauer-Townsend minimum in liquid methane and liquid argon; discovery of a Ramsauer-Townsend minimum in gaseous ethane and propane; motion of thermal electrons in n-alkane vapors; electron mobilities in high pressure gases; electron capture and drift in liquid media; electron attachment to molecules in dense gases; attachment of slow electrons to hexafluorobenzene; fragmentation of atmospheric halocarbons under electron impact; negative ion resonances and threshold electron excitation spectra of organic molecules; theoretical studies of negative-ion resonance states of organic molecules; kinetics of electron capture by sulfur hexafluoride in solution; interactions of slow electrons with benzene and benzene derivatives; Stokes and anti-Stokes fluorescence of 1 : 12-benzoperylene in solution; photoionization of molecules in liquid media; construction of high-voltage breakdown apparatus for gaseous insulation studies; measurements of the breakdown strengths of gaseous insulators and their relation to basic electron-collision processes; accuracy of the breakdown voltage measurements; and assembling basic data on electronegative gases of significance to breakdown

  18. Energy harvesting in high voltage measuring techniques

    International Nuclear Information System (INIS)

    Żyłka, Pawel; Doliński, Marcin

    2016-01-01

    The paper discusses selected problems related to application of energy harvesting (that is, generating electricity from surplus energy present in the environment) to supply autonomous ultra-low-power measurement systems applicable in high voltage engineering. As a practical example of such implementation a laboratory model of a remote temperature sensor is presented, which is self-powered by heat generated in a current-carrying busbar in HV- switchgear. Presented system exploits a thermoelectric harvester based on a passively cooled Peltier module supplying micro-power low-voltage dc-dc converter driving energy-efficient temperature sensor, microcontroller and a fibre-optic transmitter. Performance of the model in laboratory simulated conditions are presented and discussed. (paper)

  19. Low-profile high-voltage compact gas switch

    International Nuclear Information System (INIS)

    Goerz, D.A.; Wilson, M.J.; Speer, R.D.

    1997-01-01

    This paper discusses the development and testing of a low-profile, high-voltage, spark-gap switch designed to be closely coupled with other components into an integrated high-energy pulsed-power source. The switch is designed to operate at 100 kV using SF6 gas pressurized to less than 0.7 MPa. The volume of the switch cavity region is less than 1.5 cm3, and the field stress along the gas-dielectric interface is as high as 130 kV/cm. The dielectric switch body has a low profile that is only I -cm tall at its greatest extent and nominally 2-mm thick over most of its area. This design achieves a very low inductance of less than 5 nH, but results in field stresses exceeding 500 kV/cm in the dielectric material. Field modeling was done to determine the appropriate shape for the highly stressed insulator and electrodes, and special manufacturing techniques were employed to mitigate the usual mechanisms that induce breakdown and failure in solid dielectrics. Static breakdown tests verified that the switch operates satisfactorily at 100 kV levels. The unit has been characterized with different shaped electrodes having nominal gap spacings of 2.0, 2.5, and 3.0 mm. The relationship between self-break voltage and operating pressure agrees well with published data on gas properties, accounting for the field enhancements of the electrode shapes being used. Capacitor discharge tests in a low inductance test fixture exhibited peak currents up to 25 kA with characteristic frequencies of the ringdown circuit ranging from 10 to 20 MHz. The ringdown waveforms and scaling of measured parameters agree well with circuit modeling of the switch and test fixture. Repetitive operation has been demonstrated at moderate rep-rates up to 15 Hz, limited by the power supply being used. Preliminary tests to evaluate lifetime of the compact switch assembly have been encouraging. In one case, after more than 7,000 high-current ringdown tests with approximately 30 C of total charge transferred, the

  20. On-site voltage measurement with capacitive sensors on high voltage systems

    NARCIS (Netherlands)

    Wu, L.; Wouters, P.A.A.F.; Heesch, van E.J.M.; Steennis, E.F.

    2011-01-01

    In Extra/High-Voltage (EHV/HV) power systems, over-voltages occur e.g. due to transients or resonances. At places where no conventional voltage measurement devices can be installed, on-site measurement of these occurrences requires preferably non intrusive sensors, which can be installed with little

  1. 76 FR 72203 - Voltage Coordination on High Voltage Grids; Notice of Reliability Workshop Agenda

    Science.gov (United States)

    2011-11-22

    ... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Docket No. AD12-5-000] Voltage Coordination on High Voltage Grids; Notice of Reliability Workshop Agenda As announced in the Notice of Staff..., from 9 a.m. to 4:30 p.m. to explore the interaction between voltage control, reliability, and economic...

  2. Streamwise Fluctuations of Vortex Breakdown at High Reynolds Numbers

    National Research Council Canada - National Science Library

    Connelly, Jonathan S

    2006-01-01

    This thesis deals with the characterization of the dependence on the flow geometry of the stream wise fluctuations of the stagnation point of vortex breakdown in axisymmetric tubes and over delta wing aircraft...

  3. High voltage fast switches for nuclear applications

    International Nuclear Information System (INIS)

    Chatroux, D.; Lausenaz, Y.; Villard, J.F.; Lafore, D.

    1999-01-01

    SILVA process consists in a selective ionization of the 235 uranium isotope, using laser beams generated by dye lasers pumped by copper vapour laser (C.V.L.). SILVA involves power electronic for 3 power supplies: - copper vapour laser power supply, - extraction power supply to generate the electric field in the vapour, and - electron beam power supply for vapour generation. This article reviews the main switches that are proposed on the market or are on development and that could be used in SILVA power supplies. The SILVA technical requirements are: high power, high voltage and very short pulses (200 ns width). (A.C.)

  4. High voltage superconducting switch for power application

    International Nuclear Information System (INIS)

    Mawardi, O.; Ferendeci, A.; Gattozzi, A.

    1983-01-01

    This paper reports the development of a novel interrupter which meets the requirements of a high voltage direct current (HVDC) power switch and at the same time doubles as a current limiter. The basic concept of the interrupter makes use of a fast superconducting, high capacity (SHIC) switch that carries the full load current while in the superconducting state and reverts to the normal resistive state when triggered. Typical design parameters are examined for the case of a HVDC transmission line handling 2.5KA at 150KVDC. The result is a power switch with superior performance and smaller size than the ones reported to date

  5. Numerical modeling of post current-zero dielectric breakdown in a low voltage circuit breaker

    Science.gov (United States)

    Thenkarai Narayanan, Venkat raman

    Oral delivery of macromolecular therapeutics has remained a challenge. Various factors govern principles of oral absorption, including solubility, tissue permeability, stability and dynamics of the gastrointestinal environment. Developing a macromolecular drug carrier for poorly bioavailable drugs is highly desirable. Dendritic polymers are attractive drug delivery vehicles because of their multifunctional surface groups, globular conformation, branched architecture, low poly dispersity and hydrophilic nature. They also offer traditional benefits of macromolecular systems such as extended plasma residence time and reduced systemic toxicity. Developing a poly(amido amine) (PAMAM) dendrimer-based oral drug delivery vehicle is the long-term goal of this research. PAMAM dendrimers can offer advantages in terms of improving solubility and permeability that can ultimately enhance oral absorption of poorly bioavailable drugs. In this dissertation, first the safety and maximum tolerated dose of six different PAMAM dendrimers was studied after oral and systemic administration. Surface charge of these dendrimers significantly influenced their toxicity profile in vivo with cationic systems proving to be more toxic than anionic systems. The inherent permeability of native anionic dendrimers was then evaluated in a mouse model to assess their potential in oral drug delivery. Results suggested that anionic G6.5 dendrimers exhibited appreciable bioavailability with partial degradation observed under in vivo conditions. Subsequently, camptothecin, a model drug used for the treatment of colorectal carcinoma, was attached to PAMAM dendrimers. Antitumor activity revealed that these conjugates were effective in inhibiting growth of cancer cells in vitro. Preliminary efficacy studies conducted in xenograft tumor models also indicated that dendrimer-drug conjugates have potential for oral chemotherapy. Further detailed in vivo studies are needed to demonstrate the utility of PAMAM

  6. Experimental study of DC vacuum breakdown and application to high-gradient accelerating structures for CLIC

    CERN Document Server

    Shipman, Nicholas; Jones, Roger

    2016-01-01

    The compact linear collider (CLIC) is a leading candidate for the next generation high energy linear collider. As any breakdown would result in a partial or full loss of luminosity for the pulse in which it occurs, obtaining a low breakdown rate in CLIC accelerating structures is a critical requirement for the successful operation of the proposed collider. This thesis presents investigations into the breakdown phenomenon primarily in the low breakdown rate regime of interest to CLIC, performed using the CERN DC spark systems between 2011 and 2014. The design, construction and commissioning of several new pieces of hardware, as well as the development of improved techniques to measuring the inter-electrode gap distance are detailed. These hardware improvements were fundamental in enabling the exciting new experiments mentioned below, which in turn have provided significant additional insight into the phenomenon of breakdown. Experiments were performed to measure fundamental parameters of individual breakdowns...

  7. High Voltage in Noble Liquids for High Energy Physics

    Energy Technology Data Exchange (ETDEWEB)

    Rebel, B. [Fermilab; Bernard, E. [Yale U.; Faham, C. H. [LBL, Berkeley; Ito, T. M. [Los Alamos; Lundberg, B. [Maryland U.; Messina, M. [Columbia U.; Monrabal, F. [Valencia U., IFIC; Pereverzev, S. P. [LLNL, Livermore; Resnati, F. [Zurich, ETH; Rowson, P. C. [SLAC; Soderberg, M. [Fermilab; Strauss, T. [Bern U.; Tomas, A. [Imperial Coll., London; Va' vra, J. [SLAC; Wang, H. [UCLA

    2014-08-22

    A workshop was held at Fermilab November 8-9, 2013 to discuss the challenges of using high voltage in noble liquids. The participants spanned the fields of neutrino, dark matter, and electric dipole moment physics. All presentations at the workshop were made in plenary sessions. This document summarizes the experiences and lessons learned from experiments in these fields at developing high voltage systems in noble liquids.

  8. Understanding and Prevention of Transient Voltages and Dielectric Breakdown in High Voltage Battery Systems

    Science.gov (United States)

    2017-07-31

    integrated into unique power system architectures that employ energy generation and storage capable of working together to supply the intermittent ...unidirectional and bidirectional TVS diodes is seen in Figure 3. TVS diodes are known for having fast switch on times but their switch off times are...switch in the circuit, simulating the fast changes in current in the profile of interest. The simulation is run for 50 ms and the initial condition of

  9. Maintenance Optimization of High Voltage Substation Model

    Directory of Open Access Journals (Sweden)

    Radim Bris

    2008-01-01

    Full Text Available The real system from practice is selected for optimization purpose in this paper. We describe the real scheme of a high voltage (HV substation in different work states. Model scheme of the HV substation 22 kV is demonstrated within the paper. The scheme serves as input model scheme for the maintenance optimization. The input reliability and cost parameters of all components are given: the preventive and corrective maintenance costs, the actual maintenance period (being optimized, the failure rate and mean time to repair - MTTR.

  10. Environmental impact of high voltage substations

    International Nuclear Information System (INIS)

    Geambasu, C.; Popadiuc, S.; Drobota, C.; Marza, F.

    2004-01-01

    The first Romanian methodology for simultaneous environmental and human risk evaluation in case of HV installations within substations pertaining to nuclear power stations, based on EU regulation is now applicable in Cernavoda substation. High voltage substations are zones where the environmental impact is focused on electromagnetic field that's causes particular effects in living tissues (human being included). That is the reason why is necessary to identify the potential risk sources, the asses including the way to correct them and to dissimulate the results to the staff and the operational personal.(author)

  11. Calculations for high voltage insulators and conductors with computer aided design and transient voltage simulations engineering for a large electrostatic accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Osswald, F.; Roumie, M.; Frick, G.; Heusch, B.

    1994-11-01

    Calculations have been made to increase the high voltage performance of some components and to explain electrical failures of the Vivitron. These involve simulations of static stresses and transient over voltages, especially on insulating boards and electrodes occurring before or during breakdowns. Developments made to the structure of the machine over the last years and new ideas to improve the static and dynamic behaviour are presented. The application of this study and HV tests led recently to a nominal potential near 20 MV without sparks. (author). 49 refs., 25 figs., 2 tabs.

  12. Calculations for high voltage insulators and conductors with computer aided design and transient voltage simulations engineering for a large electrostatic accelerator

    International Nuclear Information System (INIS)

    Osswald, F.; Roumie, M.; Frick, G.; Heusch, B.

    1994-11-01

    Calculations have been made to increase the high voltage performance of some components and to explain electrical failures of the Vivitron. These involve simulations of static stresses and transient over voltages, especially on insulating boards and electrodes occurring before or during breakdowns. Developments made to the structure of the machine over the last years and new ideas to improve the static and dynamic behaviour are presented. The application of this study and HV tests led recently to a nominal potential near 20 MV without sparks. (author). 49 refs., 25 figs., 2 tabs

  13. Formation of ball streamers at a subnanosecond breakdown of gases at a high pressure in a nonuniform electric field

    Science.gov (United States)

    Beloplotov, D. V.; Tarasenko, V. F.; Sorokin, D. A.; Lomaev, M. I.

    2017-11-01

    The formation of a diffuse discharge plasma at a subnanosecond breakdown of a "cone-plane" gap filled with air, nitrogen, methane, hydrogen, argon, neon, and helium at various pressures has been studied. Nanosecond negative and positive voltage pulses have been applied to the conical electrode. The experimental data on the dynamics of plasma glow at the stage of formation and propagation of a streamer have been obtained with intensified charge-coupled device and streak cameras. It has been found that the formation of ball streamers is observed in all gases and at both polarities. A supershort avalanche electron beam has been detected behind the flat foil electrode in a wide range of pressures in the case of a negatively charged conical electrode. A mechanism of the formation of streamers at breakdown of various gases at high overvoltages has been discussed.

  14. Highly oxidising fluids generated during serpentinite breakdown in subduction zones.

    Science.gov (United States)

    Debret, B; Sverjensky, D A

    2017-09-04

    Subduction zones facilitate chemical exchanges between Earth's deep interior and volcanism that affects habitability of the surface environment. Lavas erupted at subduction zones are oxidized and release volatile species. These features may reflect a modification of the oxidation state of the sub-arc mantle by hydrous, oxidizing sulfate and/or carbonate-bearing fluids derived from subducting slabs. But the reason that the fluids are oxidizing has been unclear. Here we use theoretical chemical mass transfer calculations to predict the redox state of fluids generated during serpentinite dehydration. Specifically, the breakdown of antigorite to olivine, enstatite, and chlorite generates fluids with high oxygen fugacities, close to the hematite-magnetite buffer, that can contain significant amounts of sulfate. The migration of these fluids from the slab to the mantle wedge could therefore provide the oxidized source for the genesis of primary arc magmas that release gases to the atmosphere during volcanism. Our results also show that the evolution of oxygen fugacity in serpentinite during subduction is sensitive to the amount of sulfides and potentially metal alloys in bulk rock, possibly producing redox heterogeneities in subducting slabs.

  15. Advanced High Voltage Power Device Concepts

    CERN Document Server

    Baliga, B Jayant

    2012-01-01

    Advanced High Voltage Power Device Concepts describes devices utilized in power transmission and distribution equipment, and for very high power motor control in electric trains and steel-mills. Since these devices must be capable of supporting more than 5000-volts in the blocking mode, this books covers operation of devices rated at 5,000-V, 10,000-V and 20,000-V. Advanced concepts (the MCT, the BRT, and the EST) that enable MOS-gated control of power thyristor structures are described and analyzed in detail. In addition, detailed analyses of the silicon IGBT, as well as the silicon carbide MOSFET and IGBT, are provided for comparison purposes. Throughout the book, analytical models are generated to give a better understanding of the physics of operation for all the structures. This book provides readers with: The first comprehensive treatment of high voltage (over 5000-volts) power devices suitable for the power distribution, traction, and motor-control markets;  Analytical formulations for all the device ...

  16. High voltage designing of 300.000 Volt

    International Nuclear Information System (INIS)

    Hutapea, Sumihar.

    1978-01-01

    Some methods of designing a.c and d.c high voltage supplies are discussed. A high voltage supply for the Gama Research Centre accelerator is designed using transistor pulse generators. High voltage transformers being made using radio transistor ferrits as a core are also discussed. (author)

  17. Accelerator System Development at High Voltage Engineering

    International Nuclear Information System (INIS)

    Klein, M. G.; Gottdang, A.; Haitsma, R. G.; Mous, D. J. W.

    2009-01-01

    Throughout the years, HVE has continuously extended the capabilities of its accelerator systems to meet the rising demands from a diverse field of applications, among which are deep level ion implantation, micro-machining, neutron production for biomedical research, isotope production or accelerator mass spectrometry. Characteristic for HVE accelerators is the coaxial construction of the all solid state power supply around the acceleration tubes. With the use of solid state technology, the accelerators feature high stability and very low ripple. Terminal voltages range from 1 to 6 MV for HVE Singletrons and Tandetrons. The high-current versions of these accelerators can provide ion beams with powers of several kW. In the last years, several systems have been built with terminal voltages of 1.25 MV, 2 MV and 5 MV. Recently, the first system based on a 6 MV Tandetron has passed the factory tests. In this paper we describe the characteristics of the HVE accelerator systems and present as example recent systems.

  18. [High voltage accidents, characteristics and treatment].

    Science.gov (United States)

    Hülsbergen-Krüger, S; Pitzler, D; Partecke, B D

    1995-04-01

    High-voltage injuries cause localised entrance and exit burns, extensive arc, flame and flash burns and, even more dangerous, necrosis of the underlying muscles on the pathway of the current through the body. Therefore it should be recognized that the ensuing disease is more like a crush injury than a thermal burn. The extent of injury cannot be judged by the percentage and depth of the skin burn. Diagnostic fasciotomies, radical debridement, and in many cases early amputation are necessary to prevent life-threatening complications. Over a period of 10 years, 43 patients with high-voltage injuries have been treated at the Hamburg Burn Center, 36 of them in primary care. Common causes of injury were accidents in railway areas (28%), using portable aluminium ladders near overhead power lines (9.3%), and working on electrical equipment (30.2%). Six of the primary care patients died (16.6%), and 34.9% had an amputation of one or more extremities. Nearly all patients underwent several debridement and split-skin graft procedures. In 30% of cases additional free and pedicled flaps were needed to cover soft tissue defects. Ten patients (23.3%) sustained fractures and other injuries from falls, seven (16.3%) of them severe polytrauma. Initial cardiac arrhythmics were diagnosed in 16.6% of the primarily treated patients. Thirty per cent of our patients had neurological complications such as peripheral paresis, tetraplegia and paraplegia, 20.7% of these caused solely by the electric current.

  19. Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

    Energy Technology Data Exchange (ETDEWEB)

    Erofeev, E. V., E-mail: erofeev@micran.ru [Tomsk State University of Control Systems and Radioelectronics, Research Institute of Electrical-Communication Systems (Russian Federation); Fedin, I. V.; Kutkov, I. V. [Research and Production Company “Micran” (Russian Federation); Yuryev, Yu. N. [National Research Tomsk Polytechnic University, Institute of Physics and Technology (Russian Federation)

    2017-02-15

    High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V{sub th} = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V{sub th} = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

  20. Increase the threshold voltage of high voltage GaN transistors by low temperature atomic hydrogen treatment

    International Nuclear Information System (INIS)

    Erofeev, E. V.; Fedin, I. V.; Kutkov, I. V.; Yuryev, Yu. N.

    2017-01-01

    High-electron-mobility transistors (HEMTs) based on AlGaN/GaN epitaxial heterostructures are a promising element base for the fabrication of high voltage electronic devices of the next generation. This is caused by both the high mobility of charge carriers in the transistor channel and the high electric strength of the material, which makes it possible to attain high breakdown voltages. For use in high-power switches, normally off-mode GaN transistors operating under enhancement conditions are required. To fabricate normally off GaN transistors, one most frequently uses a subgate region based on magnesium-doped p-GaN. However, optimization of the p-GaN epitaxial-layer thickness and the doping level makes it possible to attain a threshold voltage of GaN transistors close to V_t_h = +2 V. In this study, it is shown that the use of low temperature treatment in an atomic hydrogen flow for the p-GaN-based subgate region before the deposition of gate-metallization layers makes it possible to increase the transistor threshold voltage to V_t_h = +3.5 V. The effects under observation can be caused by the formation of a dipole layer on the p-GaN surface induced by the effect of atomic hydrogen. The heat treatment of hydrogen-treated GaN transistors in a nitrogen environment at a temperature of T = 250°C for 12 h reveals no degradation of the transistor’s electrical parameters, which can be caused by the formation of a thermally stable dipole layer at the metal/p-GaN interface as a result of hydrogenation.

  1. Blackbody Emission from Laser Breakdown in High-Pressure Gases

    Science.gov (United States)

    Bataller, A.; Plateau, G. R.; Kappus, B.; Putterman, S.

    2014-08-01

    Laser induced breakdown of pressurized gases is used to generate plasmas under conditions where the atomic density and temperature are similar to those found in sonoluminescing bubbles. Calibrated streak spectroscopy reveals that a blackbody persists well after the exciting femtosecond laser pulse has turned off. Deviation from Saha's equation of state and an accompanying large reduction in ionization potential are observed at unexpectedly low atomic densities—in parallel with sonoluminescence. In laser breakdown, energy input proceeds via excitation of electrons whereas in sonoluminescence it is initiated via the atoms. The similar responses indicate that these systems are revealing the thermodynamics and transport of a strongly coupled plasma.

  2. The effect of a HfO2 insulator on the improvement of breakdown voltage in field-plated GaN-based HEMT

    International Nuclear Information System (INIS)

    Mao Wei; Hao Yue; Ma Xiao-Hua; Wang Chong; Zhang Jin-Cheng; Liu Hong-Xia; Bi Zhi-Wei; Xu Sheng-Rui; Yang Lin-An; Yang Ling; Zhang Kai; Zhang Nai-Qian; Pei Yi; Yang Cui

    2011-01-01

    A GaN/Al 0.3 Ga 0.7 N/AlN/GaN high-electron mobility transistor utilizing a field plate (with a 0.3 μm overhang towards the drain and a 0.2 μm overhang towards the source) over a 165-nm sputtered HfO 2 insulator (HfO 2 -FP-HEMT) is fabricated on a sapphire substrate. Compared with the conventional field-plated HEMT, which has the same geometric structure but uses a 60-nm SiN insulator beneath the field plate (SiN-FP-HEMT), the HfO 2 -FP-HEMT exhibits a significant improvement of the breakdown voltage (up to 181 V) as well as a record field-plate efficiency (up to 276 V/μm). This is because the HfO 2 insulator can further improve the modulation of the field plate on the electric field distribution in the device channel, which is proved by the numerical simulation results. Based on the simulation results, a novel approach named the proportional design is proposed to predict the optimal dielectric thickness beneath the field plate. It can simplify the field-plated HEMT design significantly. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Complete low power controller for high voltage power systems

    International Nuclear Information System (INIS)

    Sumner, R.; Blanar, G.

    1997-01-01

    The MHV100 is a custom CMOS integrated circuit, developed for the AMS experiment. It provides complete control for a single channel high voltage (HV) generator and integrates all the required digital communications, D to A and A to D converters, the analog feedback loop and output drivers. This chip has been designed for use in both distributed high voltage systems or for low cost single channel high voltage systems. The output voltage and current range is determined by the external components

  4. Streamer model for high voltage water switches

    International Nuclear Information System (INIS)

    Sazama, F.J.; Kenyon, V.L. III

    1979-01-01

    An electrical switch model for high voltage water switches has been developed which predicts streamer-switching effects that correlate well with water-switch data from Casino over the past four years and with switch data from recent Aurora/AMP experiments. Preclosure rounding and postclosure resistive damping of pulseforming line voltage waveforms are explained in terms of spatially-extensive, capacitive-coupling of the conducting streamers as they propagate across the gap and in terms of time-dependent streamer resistance and inductance. The arc resistance of the Casino water switch and of a gas switch under test on Casino was determined by computer fit to be 0.5 +- 0.1 ohms and 0.3 +- 0.06 ohms respectively, during the time of peak current in the power pulse. Energy lost in the water switch during the first pulse is 18% of that stored in the pulseforming line while similar energy lost in the gas switch is 11%. The model is described, computer transient analyses are compared with observed water and gas switch data and the results - switch resistance, inductance and energy loss during the primary power pulse - are presented

  5. High Voltage Power Transmission for Wind Energy

    Science.gov (United States)

    Kim, Young il

    The high wind speeds and wide available area at sea have recently increased the interests on offshore wind farms in the U.S.A. As offshore wind farms become larger and are placed further from the shore, the power transmission to the onshore grid becomes a key feature. Power transmission of the offshore wind farm, in which good wind conditions and a larger installation area than an onshore site are available, requires the use of submarine cable systems. Therefore, an underground power cable system requires unique design and installation challenges not found in the overhead power cable environment. This paper presents analysis about the benefit and drawbacks of three different transmission solutions: HVAC, LCC/VSC HVDC in the grid connecting offshore wind farms and also analyzed the electrical characteristics of underground cables. In particular, loss of HV (High Voltage) subsea power of the transmission cables was evaluated by the Brakelmann's theory, taking into account the distributions of current and temperature.

  6. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2014-01-01

    Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric...

  7. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  8. High voltage high brightness electron accelerators with MITL voltage adder coupled to foilless diodes

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poukey, J.W.; Frost, C.A.; Shope, S.L.; Halbleib, J.A.; Turman, B.N.

    1993-01-01

    During the last ten years the authors have extensively studied the physics and operation of magnetically-immersed electron foilless diodes. Most of these sources were utilized as injectors to high current, high energy linear induction accelerators such as those of the RADLAC family. Recently they have experimentally and theoretically demonstrated that foilless diodes can be successfully coupled to self-magnetically insulated transmission line voltage adders to produce very small high brightness, high definition (no halo) electron beams. The RADLAC/SMILE experience opened the path to a new approach in high brightness, high energy induction accelerators. There is no beam drifting through the device. The voltage addition occurs in a center conductor, and the beam is created at the high voltage end in an applied magnetic field diode. This work was motivated by the remarkable success of the HERMES-III accelerator and the need to produce small radius, high energy, high current electron beams for air propagation studies and flash x-ray radiography. In this paper they present experimental results compared with analytical and numerical simulations in addition to design examples of devices that can produce multikiloamp electron beams of as high as 100 MV energies and radii as small as 1 mm

  9. RICH High Voltages & PDF Analysis @ LHCb

    CERN Multimedia

    Fanchini, E

    2009-01-01

    In the LHCb experiment an important issue is the identification of the hadrons of the final states of the B mesons decays. Two RICH subdetectors are devoted to this task, and the Hybrid Photon Detectors (HPDs) are the photodetectors used to detect Cherenkov light. In this poster there is a description of how the very high voltage (-18 KV) supply stability used to power the HPDs is monitored. It is also presented the basics of a study which can be done with the first collision data: the analysis of the dimuons from the Drell-Yan process. This process is well known and the acceptance of the LHCb detector in terms of pseudorapidity will be very useful to improve the knowledge of the proton structure functions or, alternatively, try to estimate the luminosity from it.

  10. High-voltage test stand at Livermore

    International Nuclear Information System (INIS)

    Smith, M.E.

    1977-01-01

    This paper describes the present design and future capability of the high-voltage test stand for neutral-beam sources at Lawrence Livermore Laboratory. The stand's immediate use will be for testing the full-scale sources (120 kV, 65 A) for the Tokamak Fusion Test Reactor. It will then be used to test parts of the sustaining source system (80 kV, 85 A) being designed for the Magnetic Fusion Test Facility. Following that will be an intensive effort to develop beams of up to 200 kV at 20 A by accelerating negative ions. The design of the test stand features a 5-MVA power supply feeding a vacuum tetrode that is used as a switch and regulator. The 500-kW arc supply and the 100-kW filament supply for the neutral-beam source are battery powered, thus eliminating one or two costly isolation transformers

  11. Influence of Low Speed Rolling Movement on High Electrical Breakdown for Water Dielectric with Microsecond Charging

    International Nuclear Information System (INIS)

    Zhang Zicheng; Zhang Jiande; Yang Jianhua

    2006-01-01

    By means of a coaxial apparatus, high electrical breakdown experiments are carried out in the rest state and the low speed rolling state with microsecond charging and the experimental results are analyzed. The conclusions are: (1) the breakdown stress of water dielectric in the rolling state is in good agreement with that in Martin formula, and so is that in the rest state; (2) the breakdown stress of water dielectric in the rolling state is about 5% higher than that in the rest state; (3) the results simulated with ANSYS demonstrate that the breakdown stress of water dielectric decreases when the bubbles appear near the surface of electrodes; (4) the primary mechanism to increase the breakdown stress of water dielectric in the rolling state is that the bubbles are driven away and the number of bubbles near the surface of electrodes is decreased by rolling movement

  12. Electrical strength of vacuum gap at repetitive breakdown

    International Nuclear Information System (INIS)

    Dubinin, N.P.; Chistyakov, N.P.

    1983-01-01

    The investigation of repetitive pulse breakdown of vacuum space, which electrodes have been subjected to various treatment in vacuum and inert gas, is carried out. In case of electrode warm-up in vacuum up to 400 deg C as well as electronic heating up to 900 deg C the voltage in case of repetitive breakdown hasncreased approximately twice and in case of a through treatment, which is accomplished by a high-current glow discharge in inert gas, the maximum high voltage in case of the first breakdown at repetitive breakdown has decreased by 30...40%, remaining 2-3 times higher than in the first case

  13. Development of large high-voltage pressure insulators for the Princeton TFTR [Tokamak Fusion Test Reactor] flexible transmission lines

    International Nuclear Information System (INIS)

    Scalise, D.T.; Fong, E.; Haughian, J.; Prechter, R.

    1986-10-01

    Specially formulated insulator materials with improved strength and high-voltage properties were developed and used for critical components of the flexible transmission lines to the TFTR neutral beam ion sources. These critical components are plates which support central conductors as they exit the high-voltage power supply and enter the ion source enclosure. Each plate acts both as a high-voltage insulator and as a pressure barrier to the SF 6 insulating gas. The original plate was made of commercial glass-epoxy laminate which limited the plate voltage capacity. The newly developed insulator is made of specially-formulated cycloalphatic Di-epoxide whose isotropic properties exhibit increased arc resistance. It is cast in one piece with skirts which greatly increase the breakdown voltage. This paper discusses the design, fabrication and testing of the new insulator

  14. High-gradient breakdown studies of an X-band Compact Linear Collider prototype structure

    Directory of Open Access Journals (Sweden)

    Xiaowei Wu

    2017-05-01

    Full Text Available A Compact Linear Collider prototype traveling-wave accelerator structure fabricated at Tsinghua University was recently high-gradient tested at the High Energy Accelerator Research Organization (KEK. This X-band structure showed good high-gradient performance of up to 100  MV/m and obtained a breakdown rate of 1.27×10^{−8} per pulse per meter at a pulse length of 250 ns. This performance was similar to that of previous structures tested at KEK and the test facility at the European Organization for Nuclear Research (CERN, thereby validating the assembly and bonding of the fabricated structure. Phenomena related to vacuum breakdown were investigated and are discussed in the present study. Evaluation of the breakdown timing revealed a special type of breakdown occurring in the immediately succeeding pulse after a usual breakdown. These breakdowns tended to occur at the beginning of the rf pulse, whereas usual breakdowns were uniformly distributed in the rf pulse. The high-gradient test was conducted under the international collaboration research program among Tsinghua University, CERN, and KEK.

  15. Specific Localization of High-Voltage Discharge in Vicinity of Two Gases

    Science.gov (United States)

    Leonov, Sergey; Shurupov, Michail; Shneider, Michail; Napartovich, Anatoly; Kochetov, Igor

    2011-10-01

    A subject of paper is the appearance and dynamics of sub-microsecond long filamentary high-voltage discharge generated in atmosphere, and in non-homogeneous gaseous media. Typical discharge parameters are: maximal current 1-3kA, breakdown voltage >100 kV, duration 30-100 ns, gap distance 50-100mm. The effect of discharge specific localization within mixing layer of two gases is particularly discussed. The second discussed idea is the filamentary discharge movement within a region with concentration gradient of different components. For the short-pulse discharge the physical mechanism appears as the following. The first stage of the spark breakdown is the multiple streamers propagation from the high-voltage electrode toward the grounded one. In case of high-power electrical source those streamers occupy a huge volume of the gas, covering all possible paths for the further development. The next phase consists of the real selection of the discharge path among the multiple channels with non-zero conductivity. Experiments and calculations are presented for Air-CO2 and Air-C2H4 pairs. The effects found are supposed to be applied for lightning prediction/protection, and for high-speed mixing acceleration. The work was funded through EOARD-ISTC project #3793p. Some part of this work was supported by RFBR grant #10-08-00952.

  16. Breakdown properties of irradiated MOS capacitors

    International Nuclear Information System (INIS)

    Paccagnella, A.; Candelori, A.; Pellizzer, F.; Fuochi, P.G.; Lavale, M.

    1996-01-01

    The authors have studied the effects of ionizing and non-ionizing radiation on the breakdown properties of different types of MOS capacitors, with thick (200 nm) and thin (down to 8 nm) oxides. In general, no large variations of the average breakdown field, time-to-breakdown at constant voltage, or charge-to-breakdown at constant voltage, or charge-to-breakdown values have been observed after high dose irradiation (20 Mrad(Si) 9 MeV electrons on thin and thick oxides, 17(Si) Mrad Co 60 gamma and 10 14 neutrons/cm 2 only on thick oxides). However, some modifications of the cumulative failure distributions have been observed in few of the oxides tested

  17. Statistics of vacuum breakdown in the high-gradient and low-rate regime

    Science.gov (United States)

    Wuensch, Walter; Degiovanni, Alberto; Calatroni, Sergio; Korsbäck, Anders; Djurabekova, Flyura; Rajamäki, Robin; Giner-Navarro, Jorge

    2017-01-01

    In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

  18. Statistics of vacuum breakdown in the high-gradient and low-rate regime

    Directory of Open Access Journals (Sweden)

    Walter Wuensch

    2017-01-01

    Full Text Available In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

  19. Solid-state high voltage modulator and its application to rf source high voltage power supplies

    International Nuclear Information System (INIS)

    Tooker, J.F.; Huynh, P.; Street, R.W.

    2009-01-01

    A solid-state high voltage modulator is described in which series-connected insulated-gate bipolar transistors (IGBTs) are switched at a fixed frequency by a pulse width modulation (PWM) regulator, that adjusts the pulse width to control the voltage out of an inductor-capacitor filter network. General Atomics proposed the HV power supply (HVPS) topology of multiple IGBT modulators connected to a common HVdc source for the large number of 1 MW klystrons in the linear accelerator of the Accelerator Production of Tritium project. The switching of 24 IGBTs to obtain 20 kVdc at 20 A for short pulses was successfully demonstrated. This effort was incorporated into the design of a -70 kV, 80 A, IGBT modulator, and in a short-pulse test 12 IGBTs regulated -5 kV at 50 A under PWM control. These two tests confirm the practicality of solid-state IGBT modulators to regulate high voltage at reasonable currents. Tokamaks such as ITER require large rf heating and current drive systems with multiple rf sources. A HVPS topology is presented that readily adapts to the three rf heating systems on ITER. To take advantage of the known economy of scale for power conversion equipment, a single HVdc source feeds multiple rf sources. The large power conversion equipment, which is located outside, converts the incoming utility line voltage directly to the HVdc needed for the class of rf sources connected to it, to further reduce cost. The HVdc feeds a set of IGBT modulators, one for each rf source, to independently control the voltage applied to each source, maximizing operational flexibility. Only the modulators are indoors, close to the rf sources, minimizing the use of costly near-tokamak floor space.

  20. Breakdown characteristics of xenon HID Lamps

    Science.gov (United States)

    Babaeva, Natalia; Sato, Ayumu; Brates, Nanu; Noro, Koji; Kushner, Mark

    2009-10-01

    The breakdown characteristics of mercury free xenon high intensity discharge (HID) lamps exhibit a large statistical time lag often having a large scatter in breakdown voltages. In this paper, we report on results from a computational investigation of the processes which determine the ignition voltages for positive and negative pulses in commercial HID lamps having fill pressures of up to 20 atm. Steep voltage rise results in higher avalanche electron densities and earlier breakdown times. Circuit characteristics also play a role. Large ballast resistors may limit current to the degree that breakdown is quenched. The breakdown voltage critically depends on cathode charge injection by electric field emission (or other mechanisms) which in large part controls the statistical time lag for breakdown. For symmetric lamps, ionization waves (IWs) simultaneously develop from the bottom and top electrodes. Breakdown typically occurs when the top and bottom IWs converge. Condensed salt layers having small conductivities on the inner walls of HID lamps and on the electrodes can influence the ignition behavior. With these layers, IWs tend to propagate along the inner wall and exhibit a different structure depending on the polarity.

  1. Characterization and Control of Vortex Breakdown over a Delta Wing at High Angles of Attack

    National Research Council Canada - National Science Library

    Mitchell, Anthony

    2000-01-01

    .... The goal of this research is the control of leading-edge vortex breakdown by open-loop, along-the-core blowing near the apex of a delta wing to improve lift and maneuverability at high angles of attack...

  2. High-speed photography and holography of laser induced breakdown in liquids

    International Nuclear Information System (INIS)

    Lauterborn, W.

    1979-01-01

    Optical breakdown phenomena in liquids due to focused ruby laser light are investigated by high-speed photography and holography. Special attention is given the dynamics of the cavities produced in the liquid upon breakdown as they can be expected to become a powerful research tool in cavitation physics. To this end the production of three-dimensional breakdown configurations would be desirable as well as their investigation by high-speed holographic means. Both problems are presently under study. To achieve multiple breakdown at preselected points in the liquid a grating-lens assembly and digital holograms in photoresist are used. To film the motion of the cavities high-speed holocinematographic methods are developed. By now four to eight holograms can be taken at a rate of 10 to 20 kHz. (author)

  3. Constant potential high-voltage generator

    International Nuclear Information System (INIS)

    Resnick, T.A.; Dupuis, W.A.; Palermo, T.

    1980-01-01

    An X-ray tube voltage generator with automatic stabilization circuitry is disclosed. The generator includes a source of pulsating direct current voltage such as from a rectified 3 phase transformer. This pulsating voltage is supplied to the cathode and anode of an X-ray tube and forms an accelerating potential for electrons within that tube. The accelerating potential is stabilized with a feedback signal which is provided by a feedback network. The network includes an error signal generator which compares an instantaneous accelerating potential with a preferred reference accelerating potential and generates an error function. This error function is transmitted to a control tube grid which in turn causes the voltage difference between X-ray tube cathode and anode to stabilize and thereby reduce the error function. In this way stabilized accelerating potentials are realized and uniform X-ray energy distributions produced. (Auth.)

  4. High voltage performance of a dc photoemission electron gun with centrifugal barrel-polished electrodes

    Science.gov (United States)

    Hernandez-Garcia, C.; Bullard, D.; Hannon, F.; Wang, Y.; Poelker, M.

    2017-09-01

    The design and fabrication of electrodes for direct current (dc) high voltage photoemission electron guns can significantly influence their performance, most notably in terms of maximum achievable bias voltage. Proper electrostatic design of the triple-point junction shield electrode minimizes the risk of electrical breakdown (arcing) along the insulator-cable plug interface, while the electrode shape is designed to maintain work, we describe a centrifugal barrel-polishing technique commonly used for polishing the interior surface of superconducting radio frequency cavities but implemented here for the first time to polish electrodes for dc high voltage photoguns. The technique reduced polishing time from weeks to hours while providing surface roughness comparable to that obtained with diamond-paste polishing and with unprecedented consistency between different electrode samples. We present electrode design considerations and high voltage conditioning results to 360 kV (˜11 MV/m), comparing barrel-polished electrode performance to that of diamond-paste polished electrodes. Tests were performed using a dc high voltage photogun with an inverted-geometry ceramic insulator design.

  5. LED-Based High-Voltage Lines Warning System

    Directory of Open Access Journals (Sweden)

    Eldar MUSA

    2013-04-01

    Full Text Available LED-based system, running with the current of high-voltage lines and converting the current flowing through the line into the light by using a toroid transformer, has been developed. The transformer’s primary winding is constituted by the high voltage power line. Toroidal core consists of two equal parts and the secondary windings are evenly placed on these two parts. The system is mounted on the high-voltage lines as a clamp. The secondary winding ends are connected in series by the connector on the clamp. LEDs are supplied by the voltage at the ends of secondary. Current flowing through highvoltage transmission lines is converted to voltage by the toroidal transformer and the light emitting LEDs are supplied with this voltage. The theory of the conversion of the current flowing through the line into the light is given. The system, running with the current of the line and converting the current into the light, has been developed. System has many application areas such as warning high voltage lines (warning winches to not hinder the high-voltage lines when working under the lines, warning planes to not touch the high-voltage lines, remote measurement of high-voltage line currents, and local illumination of the line area

  6. Advances in high voltage power switching with GTOs

    International Nuclear Information System (INIS)

    Podlesak, T.F.

    1990-01-01

    The control of high voltage at high power, particularly opening switches, has been difficult in the past. Using gate turnoff thyristors (GTOs) arranged in series enables large currents to be switched at high voltage. The authors report a high voltage opening switch has been successfully demonstrated. This switch uses GTOs in series and successfully operates at voltages higher than the rated voltage of the individual devices. It is believed that this is the first time this has been successfully demonstrated, in that GTOs have been operated in series before, but always in a manner as to not exceed the voltage capability of the individual devices. In short, the devices have not worked together, sharing the voltage, but one device has been operated using several backup devices. Of particular interest is how well the individual devices share the voltage applied to them. Equal voltage sharing between devices is absolutely essential, in order to not exceed the voltage rating of any of the devices in the series chain. This is accomplished at high (microsecond) switching speeds. Thus, the system is useful for high frequency applications as well as high power, making for a flexible circuit system element. This demonstration system is rated at 5 KV and uses 1 KV devices. A larger 24 KV system is under design and will use 4.5 KV devices. In order to design the 24 KV switch, the safe operating area of the large devices must be known thoroughly

  7. Ionization smoke detectors - the high-voltage issues

    International Nuclear Information System (INIS)

    Anon.

    1992-01-01

    Production of high-voltage ionization smoke detectors ceased in 1978 following the development of lower voltage models which used much smaller amounts of radioactive material. Despite this fact, thousands of high-voltage detectors are still in use today in many large UK companies. The major users argue that there is no reason to stop using their detectors if they are still fit for their purpose - many could last for another 15 to 20 years if properly maintained. But pressure has been mounting on businesses to replace all their high-voltage detectors with new low-voltage models within the next couple of years. This could place a huge financial burden on the companies concerned, with costs possibly running into millions of pounds. Traditionally, the major detector installers offered cleaning and maintenance services for high-voltage detectors to their customers but these have now been withdrawn. The installers give no clear reasons for this decision except that the detectors are outmoded and should be disposed of as soon as possible. Most users would agree that conversion to low-voltage types is inevitable but their main worry is the financial strain of replacing all their detectors - and associated equipment - in one go. They would prefer to phase out their high-voltage detectors in stages over a number of years to spread the costs of conversion. The problems of maintenance is discussed. A dual voltage fire alarm panel which allows the high-voltage detectors to be phased out is mentioned. (Author)

  8. Vivitron 1995, transient voltage simulation, high voltage insulator tests, electric field calculation

    International Nuclear Information System (INIS)

    Frick, G.; Osswald, F.; Heusch, B.

    1996-01-01

    Preliminary investigations showed clearly that, because of the discrete electrode structure of the Vivitron, important overvoltage leading to insulator damage can appear in case of a spark. The first high voltage tests showed damage connected with such events. This fact leads to a severe voltage limitation. This work describes, at first, studies made to understand the effects of transients and the associated over-voltage appearing in the Vivitron. Then we present the high voltage tests made with full size Vivitron components using the CN 6 MV machine as a pilot machine. Extensive field calculations were made. These involve simulations of static stresses and transient overvoltages, on insulating boards and electrodes. This work gave us the solutions for arrangements and modifications in the machine. After application, the Vivitron runs now without any sparks and damage at 20 MV. In the same manner, we tested column insulators of a new design and so we will find out how to get to higher voltages. Electric field calculation around the tie bars connecting the discrete electrodes together showed field enhancements when the voltages applied on the discrete electrodes are not equally distributed. This fact is one of the sources of discharges and voltage limitations. A scenario of a spark event is described and indications are given how to proceed towards higher voltages, in the 30 MV range. (orig.)

  9. High-Voltage LED Light Engine with Integrated Driver

    Energy Technology Data Exchange (ETDEWEB)

    Soer, Wouter [Lumileds LLC, San Jose, CA (United States)

    2016-02-29

    LED luminaires have seen dramatic changes in cost breakdown over the past few years. The LED component cost, which until recently was the dominant portion of luminaire cost, has fallen to a level of the same order as the other luminaire components, such as the driver, housing, optics etc. With the current state of the technology, further luminaire performance improvement and cost reduction is realized most effectively by optimization of the whole system, rather than a single component. This project focuses on improving the integration between LEDs and drivers. Lumileds has developed a light engine platform based on low-cost high-power LEDs and driver topologies optimized for integration with these LEDs on a single substrate. The integration of driver and LEDs enables an estimated luminaire cost reduction of about 25% for targeted applications, mostly due to significant reductions in driver and housing cost. The high-power LEDs are based on Lumileds’ patterned sapphire substrate flip-chip (PSS-FC) technology, affording reduced die fabrication and packaging cost compared to existing technology. Two general versions of PSS-FC die were developed in order to create the desired voltage and flux increments for driver integration: (i) small single-junction die (0.5 mm2), optimal for distributed lighting applications, and (ii) larger multi-junction die (2 mm2 and 4 mm2) for high-power directional applications. Two driver topologies were developed: a tapped linear driver topology and a single-stage switch-mode topology, taking advantage of the flexible voltage configurations of the new PSS-FC die and the simplification opportunities enabled by integration of LEDs and driver on the same board. A prototype light engine was developed for an outdoor “core module” application based on the multi-junction PSS-FC die and the single-stage switch-mode driver. The light engine meets the project efficacy target of 128 lm/W at a luminous flux

  10. Universal trench design method for a high-voltage SOI trench LDMOS

    Institute of Scientific and Technical Information of China (English)

    Hu Xiarong; Zhang Bo; Luo Xiaorong; Li Zhaoji

    2012-01-01

    The design method for a high-voltage SOl trench LDMOS for various trench permittivities,widths and depths is introduced.A universal method for efficient design is presented for the first time,taking the trade-off between breakdown voltage (BV) and specific on-resistance (Rs,on) into account.The high-k (relative permittivity)dielectric is suitable to fill a shallow and wide trench while the low-k dielectric is suitable to fill a deep and narrow trench.An SOI LDMOS with a vacuum trench in the drift region is also discussed.Simulation results show that the high FOM BV2/Rs,on can be achieved with a trench filled with the low-k dielectric due to its shortened cell-pitch.

  11. Ultra Fast, High Rep Rate, High Voltage Spark Gap Pulser

    Science.gov (United States)

    1995-07-01

    current rise time. The spark gap was designed to have a coaxial geometry reducing its inductance. Provisions were made to pass flowing gas between the...ULTRA FAST, HIGH REP RATE, HIGH VOLTAGE SPARK GAP PULSER Robert A. Pastore Jr., Lawrence E. Kingsley, Kevin Fonda, Erik Lenzing Electrophysics and...Modeling Branch AMSRL-PS-EA Tel.: (908)-532-0271 FAX: (908)-542-3348 U.S. Army Research Laboratory Physical Sciences Directorate Ft. Monmouth

  12. CO2-Tea pulse clipping using pulsed high voltage preionization for high spatial resolution I.R. Lidar systems

    Directory of Open Access Journals (Sweden)

    Gasmi Taieb

    2018-01-01

    Full Text Available An extra-cavity CO2-TEA laser pulse clipper for high spatial resolution atmospheric monitoring is presented. The clipper uses pulsed high voltageto facilitate the breakdown of the gas within the clipper cell. Complete extinction of the nitrogen tail, that degrades the range resolution of LIDARS, is obtained at pressures from 375 up to 1500 Torr for nitrogen and argon gases whereas an attenuation coefficient of almost 102 is achieved for helium. Excellent energy stability and pulse width repeatability were achieved using high voltage pre-ionized gas technique.

  13. CO2-Tea pulse clipping using pulsed high voltage preionization for high spatial resolution I.R. Lidar systems

    Science.gov (United States)

    Gasmi, Taieb

    2018-04-01

    An extra-cavity CO2-TEA laser pulse clipper for high spatial resolution atmospheric monitoring is presented. The clipper uses pulsed high voltageto facilitate the breakdown of the gas within the clipper cell. Complete extinction of the nitrogen tail, that degrades the range resolution of LIDARS, is obtained at pressures from 375 up to 1500 Torr for nitrogen and argon gases whereas an attenuation coefficient of almost 102 is achieved for helium. Excellent energy stability and pulse width repeatability were achieved using high voltage pre-ionized gas technique.

  14. High voltage disconnect switch position monitoring

    Energy Technology Data Exchange (ETDEWEB)

    Crampton, S W

    1983-08-01

    Unreliable position indication on high-voltage (HV) disconnect switches can result in equipment damage worth many times the cost of a disconnect switch. The benefits and limitations of a number of possible methods of reliably monitoring HV disconnect switches are assessed. Several methods of powering active devices at HV are noted. It is concluded that the most reliable way of monitoring switch position at reasonable cost would use a passive hermetically-sealed blade-position sensor located at HV, with a fibre-optic link between HV and ground. Separate sensors would be used for open and closed position indication. For maximum reliability the fibre-optic link would continue into the relay building. A passive magnetically actuated fibre-optic sensor has been built which demonstrates the feasibility of the concept. The sensor monitors blade position relative to the jaws in three dimensions with high resolution. A design for an improved passive magneto-optic sensor has significantly lower optical losses, allowing a single fibre-optic loop and 3 sensors to monitor closure of all phases of a disconnect switch. A similar loop would monitor switch opening. The improved sensor has a solid copper housing to provide greater immunity to fault currents, and to protect it from the environment and from physical damage. Two methods of providing a protected path for fibre-optics passing from HV to ground are proposed, one using a hollow porcelain switch-support insulator and the other using an additional small-diameter polymer insulator with optical fibres imbedded in its fibreglass core. A number of improvements are recommended which can be made to existing switches to increase their reliability. 16 refs., 13 figs., 1 tab.

  15. Improving breakdown voltage and self-heating effect for SiC LDMOS with double L-shaped buried oxide layers

    Science.gov (United States)

    Bao, Meng-tian; Wang, Ying

    2017-02-01

    In this paper, a SiC LDMOS with double L-shaped buried oxide layers (DL-SiC LDMOS) is investigated and simulated. The DL-SiC LDMOS consists of two L-shaped buried oxide layers and two SiC windows. Using 2-D numerical simulation software, Atlas, Silvaco TCAD, the breakdown voltage, and the self-heating effect are discussed. The double-L shaped buried oxide layers and SiC windows in the active area can introduce an additional electric field peak and make the electric field distribution more uniform in the drift region. In addition, the SiC windows, which connect the active area to the substrate, can facilitate heat dissipation and reduce the maximum lattice temperature of the device. Compared with the BODS structure, the DL-SiC LDMOS and BODS structures have the same device parameters, except of the buried oxide layers. The simulation results of DL-SiC LDMOS exhibits outstanding characteristics including an increase of the breakdown voltage by 32.6% to 1220 V, and a low maximum lattice temperature (535 K) at room temperature.

  16. A high-voltage test for the ATLAS RPC qualification

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Simone, A; Liberti, B; Santonico, R

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC "gas volumes", namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C//2H//2F//4/i-C//4H//1//0 = 95/5. The results presented here concern 45% of the total foreseen production.

  17. A high-voltage test for the ATLAS RPC qualification

    International Nuclear Information System (INIS)

    Aielli, G.; Camarri, P.; Cardarelli, R.; Di Ciaccio, A.; Di Simone, A.; Liberti, B.; Santonico, R.

    2004-01-01

    The RPC production sequence for the ATLAS experiment includes a specific test of current absorption at the operating point, which concerns the RPC 'gas volumes', namely the bare detectors not yet assembled with the read-out panels and the mechanical support structures. The test, which is carried out at the production site, consists of two phases. The gas volumes are initially conditioned with pure argon, keeping the voltage constant just above the breakdown value of about 2 kV. The final test, performed after the volumes have undergone inner surface varnishing with linseed oil, is based on the measurement of the current-voltage characteristics with the binary operating gas, C2H2F4/i-C4H10=95/5. The results presented here concern 45% of the total foreseen production

  18. High voltage wide range marx generator design and construction

    International Nuclear Information System (INIS)

    Thompson, J.E.

    1976-01-01

    A wide range, long pulse, Marx generator has been designed and constructed for the purpose of exciting a thermionic electron gun utilized for quasi-cw gas laser medium ionization. The Marx generator has been specifically designed to operate over a voltage range variable from 100 kV to 200 kV into a resistive load of between 83 kΩ and open circuit. This wide operating range, both in voltage and load impedance, was obtained using interstage coupling capacitors to assure overvoltage and subsequent breakdown of the three element spark gap switches used. This paper will discuss the motivation and specific application for the Marx generator and will present the relevant design procedure with particular emphasis on the interstage coupling and triggering techniques employed. Experimental data regarding the measured Marx generator performance will also be presented

  19. The Nanophysics of Electron Emission and Breakdown for High Power Microwave Source

    Science.gov (United States)

    2009-12-21

    coaxial anode/collector. 3.1.2. Formation of  plasma  filaments during w‐band microwave breakdown  Regular, two-dimensional plasma ...Injection Gun ," IEEE Trans. Elec. Devices (May, 2005). 2. Booske, John H., “ Plasma physics and related challenges of millimeter-to-terahertz and...high power microwave (HPM) device technologies by establishing new physical understanding of electron emission/absorption and plasma breakdown

  20. Study of protection devices against the effects of electric discharges inside a very high voltage generator: the Vivitron accelerator

    International Nuclear Information System (INIS)

    Nolot, E.

    1996-01-01

    The Vivitron tandem is a large electrostatic accelerator comprising a Van de Graaff generator designed to reach terminal voltages of around 30 MV. The machine is limited at rather lower nominal voltages (about 20 MV) due to the sensitivity of the insulating column structure to transient overvoltages. These are induced by electrical discharges in compressed SF 6 . This thesis first aims at analysing the fundamental reasons of electrical discharges in order to limit the probability of their occurrence. Then we simulate the transient overvoltages induced and present some improvements which may lead to a stable behaviour of the Vivitron at nominal voltages higher than 20 MV. Initially we deduce discharge onset voltages and actual breakdown field limitations in the different gap geometries from analysis of possible breakdown mechanisms in compressed SF 6 . In a second part, some electrical characteristics of the insulating column structure are measured at high voltage. Fast rising oscillating waves induced by sparking in the Vivitron, along with the associated energies,are determined in the third part. The last part deals with new surge protections of the insulating column structure. Spark gaps with precise onset voltage and optimized shielding electrodes are discussed. ZnO-based varistors designed for operation at very high fields have also been developed in order to reduce transient overvoltage values. (author)

  1. A high-voltage equipment (high voltage supply, high voltage pulse generators, resonant charging inductance, synchro-instruments for gyrotron frequency measurements) for plasma applications

    International Nuclear Information System (INIS)

    Spassov, Velin

    1996-01-01

    This document reports my activities as visitor-professor at the Gyrotron Project - INPE Plasma Laboratory. The main objective of my activities was designing, construction and testing a suitable high-voltage pulse generator for plasma applications, and efforts were concentrated on the following points: Design of high-voltage resonant power supply with tunable output (0 - 50 kV) for line-type high voltage pulse generator; design of line-type pulse generator (4 microseconds pulse duration, 0 - 25 kV tunable voltage) for non linear loads such as a gyrotron and P III reactor; design of resonant charging inductance for resonant line-type pulse generator, and design of high resolution synchro instrument for gyrotron frequency measurement. (author)

  2. Dielectric breakdown in liquid helium

    International Nuclear Information System (INIS)

    Miller, F.L. Jr.

    1975-01-01

    The experimental apparatus consists of a 130 kV dc 80 kV ac intermediate voltage unit and a 600 kV dc 700 kV high voltage unit under construction. The experimental devices consist of an insulated container, or dewar, in which two electrodes are placed, one above the other. A voltage is built up in one electrode until an arc occurs to the other electrode. A typical set of breakdown data is shown. A mathematical analysis is briefly described. (MOW)

  3. High Voltage Performance of the Beam Screen of the LHC Injection Kicker Magnets

    CERN Document Server

    Barnes, MJ; Bregliozzi, G; Calatroni, S; Costa Pinto, P; Day, H; Ducimetière, L; Kramer, T; Namora, V; Mertens, V; Taborelli, M

    2014-01-01

    The LHC injection kicker magnets include beam screens to shield the ferrite yokes against wakefields resulting from the high intensity beam. The screening is provided by conductors lodged in the inner wall of a ceramic support tube. The design of the beam screen has been upgraded to overcome limitations and permit LHC operation with increasingly higher bunch intensity and short bunch lengths: the new design also significantly reduces the electric field associated with the screen conductors, decreasing the probability of electrical breakdown. The high voltage conditioning process for the upgraded kicker magnets is presented and discussed. In addition a test setup has been utilized to study flashover, on the inner wall of the ceramic tube, as a function of both applied voltage and vacuum pressure: results from the test setup are presented.

  4. Rad-Hard, Miniaturized, Scalable, High-Voltage Switching Module for Power Applications Rad-Hard, Miniaturized

    Science.gov (United States)

    Adell, Philippe C.; Mojarradi, Mohammad; DelCastillo, Linda Y.; Vo, Tuan A.

    2011-01-01

    A paper discusses the successful development of a miniaturized radiation hardened high-voltage switching module operating at 2.5 kV suitable for space application. The high-voltage architecture was designed, fabricated, and tested using a commercial process that uses a unique combination of 0.25 micrometer CMOS (complementary metal oxide semiconductor) transistors and high-voltage lateral DMOS (diffusion metal oxide semiconductor) device with high breakdown voltage (greater than 650 V). The high-voltage requirements are achieved by stacking a number of DMOS devices within one module, while two modules can be placed in series to achieve higher voltages. Besides the high-voltage requirements, a second generation prototype is currently being developed to provide improved switching capabilities (rise time and fall time for full range of target voltages and currents), the ability to scale the output voltage to a desired value with good accuracy (few percent) up to 10 kV, to cover a wide range of high-voltage applications. In addition, to ensure miniaturization, long life, and high reliability, the assemblies will require intensive high-voltage electrostatic modeling (optimized E-field distribution throughout the module) to complete the proposed packaging approach and test the applicability of using advanced materials in a space-like environment (temperature and pressure) to help prevent potential arcing and corona due to high field regions. Finally, a single-event effect evaluation would have to be performed and single-event mitigation methods implemented at the design and system level or developed to ensure complete radiation hardness of the module.

  5. High-voltage pulse generator for electron gun power supply

    International Nuclear Information System (INIS)

    Korenev, S.A.; Enchevich, I.B.; Mikhov, M.K.

    1987-01-01

    High-voltage pulse generator with combined capacitive and inductive energy storages for electron gun power supply is described. Hydrogen thyratron set in a short magnetic lense is a current breaker. Times of current interruption in thyratrons are in the range from 100 to 300 ns. With 1 kV charging voltage of capacitive energy storage 25 kV voltage pulse is obtained in the load. The given high-voltage pulse generator was used for supply of an electron gun generating 10-30 keV low-energy electron beam

  6. High voltage high brightness electron accelerator with MITL voltage adder coupled to foilless diode

    International Nuclear Information System (INIS)

    Mazarakis, M.G.; Poulkey, J.W.; Rovang, D.

    1995-01-01

    The design and analysis of a high brightness electron beam experiment under construction at Sandia National Laboratory is presented. The beam energy is 12 MeV, the current 35-40 kA, the rms radius 0.5 mm, and the pulse duration FWHM 40 ns. The accelerator is SABRE a pulsed inductive voltage adder, and the electron source is a magnetically immersed foilless diode. This experiment has as its goal to stretch the technology to the edge and produce the highest possible electron current in a submillimeter radius beam

  7. High voltage interactions of a sounding rocket with the ambient and system-generated environments

    International Nuclear Information System (INIS)

    Kuharski, R.A.; Jongeward, G.A.; Wilcox, K.G.; Rankin, T.V.; Roche, J.C.

    1990-01-01

    The high-power space systems will interact with their environment far more severely than the low-voltage, low-power space systems flown to date. As a minimum, these interactions will include ionization and bulk breakdown, plasma-induced surface flashover, oxygen erosion, meteor and debris damage, and radiation effects. The SPEAR program is addressing some of these issues through the development and testing of high-powered systems for the space environment. SPEAR III, the latest in the SPEAR program, is scheduled to fly in early 1991. It will test high-voltage designs in both ambient and system-generated environments. Two of the key questions that the experiment hopes to address are whether or not the Earth's magnetic field can cause the current that a high-voltage object draws from the plasma to be far less then the current that would be drawn in the absence of the magnetic field and under what neutral environment conditions a discharge from the high-voltage object to the plasma will occur. In this paper, the authors use EPSAT (the environment power system analysis tool) to baseline the design of SPEAR III. The authors' calculations indicate that the experiment will produce the conditions necessary to address these questions

  8. Mechanism of formation of subnanosecond current front in high-voltage pulse open discharge

    Science.gov (United States)

    Schweigert, I. V.; Alexandrov, A. L.; Zakrevsky, Dm. E.; Bokhan, P. A.

    2014-11-01

    The mechanism of subnanosecond current front rise observed previously in the experiment in high-voltage pulse open discharge in helium is studied in kinetic particle-in-cell simulations. The Boltzmann equations for electrons, ions, and fast atoms are solved self-consistently with the Poisson equations for the electrical potential. The partial contributions to the secondary electron emission from the ions, fast atoms, photons, and electrons, bombarding the electrode, are calculated. In simulations, as in the experiment, the discharge glows between two symmetrical cathodes and the anode grid in the midplane at P =6 Torr and the applied voltage of 20 kV. The electron avalanche development is considered for two experimental situations during the last stage of breakdown: (i) with constant voltage and (ii) with decreasing voltage. For case (i), the subnanosecond current front rise is set by photons from the collisional excitation transfer reactions. For the case (ii), the energetic electrons swamp the cathode during voltage drop and provide the secondary electron emission for the subnanosecond current rise, observed in the experiment.

  9. Technical and economic considerations of extra high voltage power transmission

    Energy Technology Data Exchange (ETDEWEB)

    Kahnt, R

    1966-09-01

    The reasons for the employment of higher transmission voltages are listed and the points decisive for the selection of three phase ac or dc systems are reviewed. This is followed by treatment of the technical and economic problems arising in three phase-extra high voltage transmission. These include selection of voltage, economical design of power lines, insulation problems, power supply dependability, equipment rating, and reactive power and stability problems.

  10. Technical and economic considerations of extra high voltage power transmission

    Energy Technology Data Exchange (ETDEWEB)

    Kahnt, R

    1966-09-01

    The reasons for the employment of higher transmission voltages are listed and the points decisive for the selection of three phase ac or dc systems are reviewed. The technical and economic problems arising in three phase extra high voltage transmission are discussed. These include selection of voltage, economical design of power lines, insulation problems, power supply dependability, equipment rating and reactive power and stability problems.

  11. Multiple High Voltage Pulse Stressing of Polymer Thick Film Resistors

    Directory of Open Access Journals (Sweden)

    Busi Rambabu

    2014-01-01

    Full Text Available The purpose of this paper is to study high voltage interactions in polymer thick film resistors, namely, polyvinyl chloride- (PVC- graphite thick film resistors, and their applications in universal trimming of these resistors. High voltages in the form of impulses for various pulse durations and with different amplitudes have been applied to polymer thick film resistors and we observed the variation of resistance of these resistors with high voltages. It has been found that the resistance of polymer thick film resistors decreases in the case of higher resistivity materials and the resistance of polymer thick film resistor increases in the case of lower resistivity materials when high voltage impulses are applied to them. It has been also found that multiple high voltage pulse (MHVP stressing can be used to trim the polymer thick film resistors either upwards or downwards.

  12. PV source based high voltage gain current fed converter

    Science.gov (United States)

    Saha, Soumya; Poddar, Sahityika; Chimonyo, Kudzai B.; Arunkumar, G.; Elangovan, D.

    2017-11-01

    This work involves designing and simulation of a PV source based high voltage gain, current fed converter. It deals with an isolated DC-DC converter which utilizes boost converter topology. The proposed converter is capable of high voltage gain and above all have very high efficiency levels as proved by the simulation results. The project intends to produce an output of 800 V dc from a 48 V dc input. The simulation results obtained from PSIM application interface were used to analyze the performance of the proposed converter. Transformer used in the circuit steps up the voltage as well as to provide electrical isolation between the low voltage and high voltage side. Since the converter involves high switching frequency of 100 kHz, ultrafast recovery diodes are employed in the circuitry. The major application of the project is for future modeling of solar powered electric hybrid cars.

  13. Voltage Balancing Method on Expert System for 51-Level MMC in High Voltage Direct Current Transmission

    Directory of Open Access Journals (Sweden)

    Yong Chen

    2016-01-01

    Full Text Available The Modular Multilevel Converters (MMC have been a spotlight for the high voltage and high power transmission systems. In the VSC-HVDC (High Voltage Direct Current based on Voltage Source Converter transmission system, the energy of DC link is stored in the distributed capacitors, and the difference of capacitors in parameters and charge rates causes capacitor voltage balance which affects the safety and stability of HVDC system. A method of MMC based on the expert system for reducing the frequency of the submodules (SMs of the IGBT switching frequency is proposed. Firstly, MMC with 51 levels for HVDC is designed. Secondly, the nearest level control (NLC for 51-level MMC is introduced. Thirdly, a modified capacitor voltage balancing method based on expert system for MMC-based HVDC transmission system is proposed. Finally, a simulation platform for 51-level Modular Multilevel Converter is constructed by using MATLAB/SIMULINK. The results indicate that the strategy proposed reduces the switching frequency on the premise of keeping submodule voltage basically identical, which greatly reduces the power losses for MMC-HVDC system.

  14. Electrical system architecture having high voltage bus

    Science.gov (United States)

    Hoff, Brian Douglas [East Peoria, IL; Akasam, Sivaprasad [Peoria, IL

    2011-03-22

    An electrical system architecture is disclosed. The architecture has a power source configured to generate a first power, and a first bus configured to receive the first power from the power source. The architecture also has a converter configured to receive the first power from the first bus and convert the first power to a second power, wherein a voltage of the second power is greater than a voltage of the first power, and a second bus configured to receive the second power from the converter. The architecture further has a power storage device configured to receive the second power from the second bus and deliver the second power to the second bus, a propulsion motor configured to receive the second power from the second bus, and an accessory motor configured to receive the second power from the second bus.

  15. Recycling potential for low voltage and high voltage high rupturing capacity fuse links.

    Science.gov (United States)

    Psomopoulos, Constantinos S; Barkas, Dimitrios A; Kaminaris, Stavros D; Ioannidis, George C; Karagiannopoulos, Panagiotis

    2017-12-01

    Low voltage and high voltage high-rupturing-capacity fuse links are used in LV and HV installations respectively, protecting mainly the LV and HV electricity distribution and transportation networks. The Waste Electrical and Electronic Equipment Directive (2002/96/EC) for "Waste of electrical and electronic equipment" is the main related legislation and as it concerns electrical and electronic equipment, it includes electric fuses. Although, the fuse links consist of recyclable materials, only small scale actions have been implemented for their recycling around Europe. This work presents the possibilities for material recovery from this specialized industrial waste for which there are only limited volume data. Furthermore, in order to present the huge possibilities and environmental benefits, it presents the potential for recycling of HRC fuses used by the Public Power Corporation of Greece, which is the major consumer for the country, but one of the smallest ones in Europe and globally, emphasizing in this way in the issue. According to the obtained results, fuse recycling could contribute to the effort for minimize the impacts on the environment through materials recovery and reduction of the wastes' volume disposed of in landfills. Copyright © 2017 Elsevier Ltd. All rights reserved.

  16. A high voltage SOI pLDMOS with a partial interface equipotential floating buried layer

    International Nuclear Information System (INIS)

    Wu Lijuan; Zhang Wentong; Zhang Bo; Li Zhaoji

    2013-01-01

    A novel silicon-on-insulator (SOI) high-voltage pLDMOS is presented with a partial interface equipotential floating buried layer (FBL) and its analytical model is analyzed in this paper. The surface heavily doped p-top layers, interface floating buried N + /P + layers, and three-step field plates are designed carefully in the FBL SOI pLDMOS to optimize the electric field distribution of the drift region and reduce the specific resistance. On the condition of ESIMOX (epoxy separated by implanted oxygen), it has been shown that the breakdown voltage of the FBL SOI pLDMOS is increased from −232 V of the conventional SOI to −425 V and the specific resistance R on,sp is reduced from 0.88 to 0.2424 Ω·cm 2 . (semiconductor devices)

  17. High Voltage Homemade Capacitor Charger for Plasma Focus System

    International Nuclear Information System (INIS)

    Abdul Halim Baijan; Azaman Ahmad; Rokiah Mohd Sabri; Siti Aiasah Hashim; Mohd Rizal Md Chulan; Wah, L.K.; Azhar Ahmad; Rosli Che Ros; Mohd Faiz Mohd Zin

    2015-01-01

    A high voltage capacitor charger has been designed and built to replace a high voltage charger type General Atomics CCDs Power Supply which was damaged. The fabrication design was using materials which were easily available in the local market. Among the main components of the high-voltage charger is a transformer for neon lights, variable transformer rated 0 - 240 V 1 KVA, and 240 V transformer isolator. The results of experiments that have been conducted shows that a homemade capacitor charger was able to charge high voltage capacitors up to the required voltage of which was 12 kV. However the time taken for charging is quite long, up to more than 6 minutes. (author)

  18. The development of high-voltage repetitive low-jitter corona stabilized triggered switch

    Science.gov (United States)

    Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

    2018-04-01

    The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

  19. Effect of RF Parameters on Breakdown Limits in High-Vacuum X-Band Structures

    International Nuclear Information System (INIS)

    Dolgashev, Valery A.

    2003-01-01

    RF breakdown is one of the major factors determining performance of high power rf components and rf sources. RF breakdown limits working power and produces irreversible surface damage. The breakdown limit depends on the rf circuit, structure geometry, and rf frequency. It is also a function of the input power, pulse width, and surface electric and magnetic fields. In this paper we discuss multi-megawatt operation of X-band rf structures at pulse width on the order of one microsecond. These structures are used in rf systems of high gradient accelerators. Recent experiments at Stanford Linear Accelerator Center (SLAC) have explored the functional dependence of breakdown limit on input power and pulse width. The experimental data covered accelerating structures and waveguides. Another breakdown limit of accelerating structures was associated with high magnetic fields found in waveguide-to-structure couplers. To understand and quantify these limits we simulated 3D structures with the electrodynamics code Ansoft HFSS and the Particle-In-Cell code MAGIC3D. Results of these simulations together with experimental data will be discussed in this paper

  20. Optically triggered high voltage switch network and method for switching a high voltage

    Science.gov (United States)

    El-Sharkawi, Mohamed A.; Andexler, George; Silberkleit, Lee I.

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  1. Optically triggered high voltage switch network and method for switching a high voltage

    Energy Technology Data Exchange (ETDEWEB)

    El-Sharkawi, Mohamed A. (Renton, WA); Andexler, George (Everett, WA); Silberkleit, Lee I. (Mountlake Terrace, WA)

    1993-01-19

    An optically triggered solid state switch and method for switching a high voltage electrical current. A plurality of solid state switches (350) are connected in series for controlling electrical current flow between a compensation capacitor (112) and ground in a reactive power compensator (50, 50') that monitors the voltage and current flowing through each of three distribution lines (52a, 52b and 52c), which are supplying three-phase power to one or more inductive loads. An optical transmitter (100) controlled by the reactive power compensation system produces light pulses that are conveyed over optical fibers (102) to a switch driver (110') that includes a plurality of series connected optical triger circuits (288). Each of the optical trigger circuits controls a pair of the solid state switches and includes a plurality of series connected resistors (294, 326, 330, and 334) that equalize or balance the potential across the plurality of trigger circuits. The trigger circuits are connected to one of the distribution lines through a trigger capacitor (340). In each switch driver, the light signals activate a phototransistor (300) so that an electrical current flows from one of the energy reservoir capacitors through a pulse transformer (306) in the trigger circuit, producing gate signals that turn on the pair of serially connected solid state switches (350).

  2. A high-voltage pulse generator for corona plasma generation

    NARCIS (Netherlands)

    Yan, K.; Heesch, van E.J.M.; Pemen, A.J.M.; Huijbrechts, P.A.H.J.; Gompel, van F.M.; Leuken, van H.E.M.; Matyas, Z.

    2002-01-01

    This paper discusses a high-voltage pulse generator for producing corona plasma. The generator consists of three resonant charging circuits, a transmission line transformer, and a triggered spark-gap switch. Voltage pulses in the order of 30-100 kV with a rise time of 10-20 ns, a pulse duration of

  3. High voltage short plus generation based on avalanche circuit

    International Nuclear Information System (INIS)

    Hu Yuanfeng; Yu Xiaoqi

    2006-01-01

    Simulate the avalanche circuit in series with PSPICE module, design the high voltage short plus generation circuit by avalanche transistor in series for the sweep deflection circuit of streak camera. The output voltage ranges 1.2 KV into 50 ohm load. The rise time of the circuit is less than 3 ns. (authors)

  4. Precision High-Voltage DC Dividers and Their Calibration

    Czech Academy of Sciences Publication Activity Database

    Dragounová, Naděžda

    2005-01-01

    Roč. 54, č. 5 (2005), s. 1911-1915 ISSN 0018-9456 R&D Projects: GA AV ČR KSK1048102; GA ČR GA202/03/0889 Keywords : calibration * dc voltage * high voltage (HV) Subject RIV: JA - Electronics ; Optoelectronics, Electrical Engineering Impact factor: 0.665, year: 2005

  5. Compact, Lightweight, High Voltage Propellant Isolators, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — TA&T, Inc. proposes an enabling fabrication process for high voltage isolators required in high power solar electric and nuclear electric propulsion (SEP and...

  6. Physicochemical assessment criteria for high-voltage pulse capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Darian, L. A., E-mail: LDarian@rambler.ru; Lam, L. Kh. [National Research University, Moscow Power Engineering Institute (Russian Federation)

    2016-12-15

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  7. Physicochemical assessment criteria for high-voltage pulse capacitors

    International Nuclear Information System (INIS)

    Darian, L. A.; Lam, L. Kh.

    2016-01-01

    In the paper, the applicability of decomposition products of internal insulation of high-voltage pulse capacitors is considered (aging is the reason for decomposition products of internal insulation). Decomposition products of internal insulation of high-voltage pulse capacitors can be used to evaluate their quality when in operation and in service. There have been three generations of markers of aging of insulation as in the case with power transformers. The area of applicability of markers of aging of insulation for power transformers has been studied and the area can be extended to high-voltage pulse capacitors. The research reveals that there is a correlation between the components and quantities of markers of aging of the first generation (gaseous decomposition products of insulation) dissolved in insulating liquid and the remaining life of high-voltage pulse capacitors. The application of markers of aging to evaluate the remaining service life of high-voltage pulse capacitor is a promising direction of research, because the design of high-voltage pulse capacitors keeps stability of markers of aging of insulation in high-voltage pulse capacitors. It is necessary to continue gathering statistical data concerning development of markers of aging of the first generation. One should also carry out research aimed at estimation of the remaining life of capacitors using markers of the second and the third generation.

  8. High voltage performance of BARC-TIFR Pelletron Accelerator

    International Nuclear Information System (INIS)

    Surendran, P.; Ansari, Q.N.; Nair, J.P.

    2014-01-01

    The 14 UD Pelletron Accelerator at TIFR, Mumbai is operational since its inception in 1988. It was decided to impart enough time for high voltage conditioning to achieve higher operational voltage. Prior to this, comprehensive works such as replacing all the sputter ion pumps and Titanium sublimation pumps across the accelerator tube with new or refurbished ones and replacement of Alumina balls in the SF_6 drier with fresh balls were carried out. High voltage conditioning of each module was done. Further conditioning of two modules at a time in overlapping mode improved the terminal voltage. As a result of this rigorous conditioning Terminal voltage of 12.6 MV was achieved and beam has been delivered to users at 12 MV terminal. Details of this effort will be presented in this paper. (author)

  9. High voltage performance of BARC-TIFR Pelletron Accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Surendran, P.; Ansari, Q.N.; Nair, J.P., E-mail: surendra@tifr.res.in [Nuclear Physics Division, Bhabha Atomic Research Centre, Mumbai (India); and others

    2014-07-01

    The 14 UD Pelletron Accelerator at TIFR, Mumbai is operational since its inception in 1988. It was decided to impart enough time for high voltage conditioning to achieve higher operational voltage. Prior to this, comprehensive works such as replacing all the sputter ion pumps and Titanium sublimation pumps across the accelerator tube with new or refurbished ones and replacement of Alumina balls in the SF{sub 6} drier with fresh balls were carried out. High voltage conditioning of each module was done. Further conditioning of two modules at a time in overlapping mode improved the terminal voltage. As a result of this rigorous conditioning Terminal voltage of 12.6 MV was achieved and beam has been delivered to users at 12 MV terminal. Details of this effort will be presented in this paper. (author)

  10. On the mechanism of high-voltage discharge initiation in high-voltage accelerator accelerating tubes

    International Nuclear Information System (INIS)

    Zheleznikov, F.G.

    1983-01-01

    Experimental investigation into physical natupe of discharge processes in high-voltage accelerator accelerating tubes in the absence of the accelerated particle beam are conducted. The installation for the study of the mechanism of initiating vacuum isolation conductivity is used in the experiments. The vacuum chamber of the installation is made of steel and sealed with rubber packings. Electrodes 300-360 mm in diameter are made of stainless steel. Two variants of cleaning technology were used before electrode assembling: 1) degreasing by organic solvents; 2) cleaning by fine grinding cloth with successive washing by rectificated alcohol. Analysis of the obtained data shows that forma. tion of background flux of charged particles in interelectrode gap is caused by external photoelectric effect, excited by X radiation, which initiates the formation of intensive internal field in microfilms of non-conducting impurities on the electrode surfaces. The secondary electron emission plays the minor role at that

  11. Planning aspects of ac extra high voltage lines

    Energy Technology Data Exchange (ETDEWEB)

    Engelhardt, H

    1964-01-01

    The technical points arising in any project for application of higher voltages on power grids in Europe are discussed. The cost aspects of two alternative ways of extending the voltage level of existing systems are discussed in detail. The short-circuit current in a high-power system with isolated or grounded neutral point and its relation to the mode of grounding is examined. For a transmission distance of 200 kVm, operating cost for each kWh transmitted are shown on curves for voltages of 220, 380 and 700 kV against transmitted energy. This shows that for any rated voltage there is a range of energy values which can be transmitted economically. Factors to be considered in maintaining, selecting or rejecting transformers and switchgear of other systems for higher voltage purposes are mentioned.

  12. Novel high-voltage power lateral MOSFET with adaptive buried electrodes

    International Nuclear Information System (INIS)

    Zhang Wen-Tong; Wu Li-Juan; Qiao Ming; Luo Xiao-Rong; Zhang Bo; Li Zhao-Ji

    2012-01-01

    A new high-voltage and low-specific on-resistance (R on,sp ) adaptive buried electrode (ABE) silicon-on-insulator (SOI) power lateral MOSFET and its analytical model of the electric fields are proposed. The MOSFET features are that the electrodes are in the buried oxide (BOX) layer, the negative drain voltage V d is divided into many partial voltages and the output to the electrodes is in the buried oxide layer and the potentials on the electrodes change linearly from the drain to the source. Because the interface silicon layer potentials are lower than the neighboring electrode potentials, the electronic potential wells are formed above the electrode regions, and the hole potential wells are formed in the spacing of two neighbouring electrode regions. The interface hole concentration is much higher than the electron concentration through designing the buried layer electrode potentials. Based on the interface charge enhanced dielectric layer field theory, the electric field strength in the buried layer is enhanced. The vertical electric field E I and the breakdown voltage (BV) of ABE SOI are 545 V/μm and −587 V in the 50 μm long drift region and the 1 μm thick dielectric layer, and a low R on,sp is obtained. Furthermore, the structure also alleviates the self-heating effect (SHE). The analytical model matches the simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  13. Integrated differential high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Farch, Kjartan

    2015-01-01

    In this paper an integrated differential high-voltage transmitting circuit for capacitive micromachined ultrasonic transducers (CMUTs) used in portable ultrasound scanners is designed and implemented in a 0.35 μm high-voltage process. Measurements are performed on the integrated circuit in order...... to assess its performance. The circuit generates pulses at differential voltage levels of 60V, 80V and 100 V, a frequency up to 5MHz and a measured driving strength of 1.75 V/ns with the CMUT connected. The total on-chip area occupied by the transmitting circuit is 0.18 mm2 and the power consumption...

  14. High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure

    Science.gov (United States)

    Yan, Xiaodong; Esqueda, Ivan S.; Ma, Jiahui; Tice, Jesse; Wang, Han

    2018-01-01

    In this work, we study the high critical breakdown field in β-Ga2O3 perpendicular to its (100) crystal plane using a β-Ga2O3/graphene vertical heterostructure. Measurements indicate a record breakdown field of 5.2 MV/cm perpendicular to the (100) plane that is significantly larger than the previously reported values on lateral β-Ga2O3 field-effect-transistors (FETs). This result is compared with the critical field typically measured within the (100) crystal plane, and the observed anisotropy is explained through a combined theoretical and experimental analysis.

  15. Copper wire theft and high voltage electrical burns.

    Science.gov (United States)

    Francis, Eamon C; Shelley, Odhran P

    2014-01-01

    High voltage electrical burns are uncommon. However in the midst of our economic recession we are noticing an increasing number of these injuries. Copper wire is a valuable commodity with physical properties as an excellent conductor of electricity making it both ubiquitous in society and prized on the black market. We present two consecutive cases referred to the National Burns Unit who sustained life threatening injuries from the alleged theft of high voltage copper wire and its omnipresence on an international scale.

  16. Copper wire theft and high voltage electrical burns

    OpenAIRE

    Francis, Eamon C; Shelley, Odhran P

    2014-01-01

    High voltage electrical burns are uncommon. However in the midst of our economic recession we are noticing an increasing number of these injuries. Copper wire is a valuable commodity with physical properties as an excellent conductor of electricity making it both ubiquitous in society and prized on the black market. We present two consecutive cases referred to the National Burns Unit who sustained life threatening injuries from the alleged theft of high voltage copper wire and its omnipresenc...

  17. Optical control system for high-voltage terminals

    International Nuclear Information System (INIS)

    Bicek, J.J.

    1978-01-01

    An optical control system for the control of devices in the terminal of an electrostatic accelerator includes a laser that is modulated by a series of preselected codes produced by an encoder. A photodiode receiver is placed in the laser beam at the high-voltage terminal of an electrostatic accelerator. A decoder connected to the photodiode decodes the signals to provide control impulses for a plurality of devices at the high voltage of the terminal

  18. Energy Storage Options for Voltage Support in Low-Voltage Grids with High Penetration of Photovoltaic

    DEFF Research Database (Denmark)

    Marra, Francesco; Tarek Fawzy, Y.; Bülo, Thorsten

    2012-01-01

    to be established. In the long term, these solutions should also aim to allow further more PV installed capacity, while meeting the power quality requirements. In this paper, different concepts of energy storage are proposed to ensure the voltage quality requirements in a LV grid with high PV penetration...

  19. A compact 100 kV high voltage glycol capacitor.

    Science.gov (United States)

    Wang, Langning; Liu, Jinliang; Feng, Jiahuai

    2015-01-01

    A high voltage capacitor is described in this paper. The capacitor uses glycerol as energy storage medium, has a large capacitance close to 1 nF, can hold off voltages of up to 100 kV for μs charging time. Allowing for low inductance, the capacitor electrode is designed as coaxial structure, which is different from the common structure of the ceramic capacitor. With a steady capacitance at different frequencies and a high hold-off voltage of up to 100 kV, the glycol capacitor design provides a potential substitute for the ceramic capacitors in pulse-forming network modulator to generate high voltage pulses with a width longer than 100 ns.

  20. Experimental and theoretical studies of a high temperature cesium-barium tacitron, with application to low voltage-high current inversion

    International Nuclear Information System (INIS)

    Murray, C.S.; El-Genk, M.S.

    1994-02-01

    A low voltage/high current switch refer-red as ''Cs-Ba tacitron'' is studied for use as a dc to ac inverter in high temperature and/or ionizing radiation environments. The operational characteristics of the Cs-Ba tacitron as a switch were investigated experimentally in three modes: (a) breakdown mode, (b) I-V mode, and (c) current modulation mode. Operation parameters measured include switching frequencies up to 20 kHz, hold-off voltages up to 200 V, current densities in excess of 15 A/CM 2 , switch power density of 1 kW/cm 2 , and a switching efficiency in excess of 90 % at collector voltages greater than 30 V. Also, if the discharge current is circuit limited to a value below the maximum thermal emission current density, the voltage drop is constant and below 3 V

  1. High Input Voltage, Silicon Carbide Power Processing Unit Performance Demonstration

    Science.gov (United States)

    Bozak, Karin E.; Pinero, Luis R.; Scheidegger, Robert J.; Aulisio, Michael V.; Gonzalez, Marcelo C.; Birchenough, Arthur G.

    2015-01-01

    A silicon carbide brassboard power processing unit has been developed by the NASA Glenn Research Center in Cleveland, Ohio. The power processing unit operates from two sources: a nominal 300 Volt high voltage input bus and a nominal 28 Volt low voltage input bus. The design of the power processing unit includes four low voltage, low power auxiliary supplies, and two parallel 7.5 kilowatt (kW) discharge power supplies that are capable of providing up to 15 kilowatts of total power at 300 to 500 Volts (V) to the thruster. Additionally, the unit contains a housekeeping supply, high voltage input filter, low voltage input filter, and master control board, such that the complete brassboard unit is capable of operating a 12.5 kilowatt Hall effect thruster. The performance of the unit was characterized under both ambient and thermal vacuum test conditions, and the results demonstrate exceptional performance with full power efficiencies exceeding 97%. The unit was also tested with a 12.5kW Hall effect thruster to verify compatibility and output filter specifications. With space-qualified silicon carbide or similar high voltage, high efficiency power devices, this would provide a design solution to address the need for high power electric propulsion systems.

  2. Low cost photomultiplier high-voltage readout system

    International Nuclear Information System (INIS)

    Oxoby, G.J.; Kunz, P.F.

    1976-10-01

    The Large Aperture Solenoid Spectrometer (LASS) at Stanford Linear Accelerator Center (SLAC) requires monitoring over 300 voltages. This data is recorded on magnetic tapes along with the event data. It must also be displayed so that operators can easily monitor and adjust the voltages. A low-cost high-voltage readout system has been implemented to offer stand-alone digital readout capability as well as fast data transfer to a host computer. The system is flexible enough to permit use of a DVM or ADC and commercially available analogue multiplexers

  3. High power breakdown testing of a photonic band-gap accelerator structure with elliptical rods

    Directory of Open Access Journals (Sweden)

    Brian J. Munroe

    2013-01-01

    Full Text Available An improved single-cell photonic band-gap (PBG structure with an inner row of elliptical rods (PBG-E was tested with high power at a 60 Hz repetition rate at X-band (11.424 GHz, achieving a gradient of 128  MV/m at a breakdown probability of 3.6×10^{-3} per pulse per meter at a pulse length of 150 ns. The tested standing-wave structure was a single high-gradient cell with an inner row of elliptical rods and an outer row of round rods; the elliptical rods reduce the peak surface magnetic field by 20% and reduce the temperature rise of the rods during the pulse by several tens of degrees, while maintaining good damping and suppression of high order modes. When compared with a single-cell standing-wave undamped disk-loaded waveguide structure with the same iris geometry under test at the same conditions, the PBG-E structure yielded the same breakdown rate within measurement error. The PBG-E structure showed a greatly reduced breakdown rate compared with earlier tests of a PBG structure with round rods, presumably due to the reduced magnetic fields at the elliptical rods vs the fields at the round rods, as well as use of an improved testing methodology. A post-testing autopsy of the PBG-E structure showed some damage on the surfaces exposed to the highest surface magnetic and electric fields. Despite these changes in surface appearance, no significant change in the breakdown rate was observed in testing. These results demonstrate that PBG structures, when designed with reduced surface magnetic fields and operated to avoid extremely high pulsed heating, can operate at breakdown probabilities comparable to undamped disk-loaded waveguide structures and are thus viable for high-gradient accelerator applications.

  4. High-frequency high-voltage high-power DC-to-DC converters

    Science.gov (United States)

    Wilson, T. G.; Owen, H. A.; Wilson, P. M.

    1982-09-01

    A simple analysis of the current and voltage waveshapes associated with the power transistor and the power diode in an example current-or-voltage step-up (buck-boost) converter is presented. The purpose of the analysis is to provide an overview of the problems and design trade-offs which must be addressed as high-power high-voltage converters are operated at switching frequencies in the range of 100 kHz and beyond. Although the analysis focuses on the current-or-voltage step-up converter as the vehicle for discussion, the basic principles presented are applicable to other converter topologies as well.

  5. Design & Fabrication of a High-Voltage Photovoltaic Cell

    Energy Technology Data Exchange (ETDEWEB)

    Felder, Jennifer; /North Carolina State U. /SLAC

    2012-09-05

    Silicon photovoltaic (PV) cells are alternative energy sources that are important in sustainable power generation. Currently, applications of PV cells are limited by the low output voltage and somewhat low efficiency of such devices. In light of this fact, this project investigates the possibility of fabricating high-voltage PV cells on float-zone silicon wafers having output voltages ranging from 50 V to 2000 V. Three designs with different geometries of diffusion layers were simulated and compared in terms of metal coverage, recombination, built-in potential, and conduction current density. One design was then chosen and optimized to be implemented in the final device design. The results of the simulation serve as a feasibility test for the design concept and provide supportive evidence of the effectiveness of silicon PV cells as high-voltage power supplies.

  6. Electrical breakdown studies with Mycalex insulators

    International Nuclear Information System (INIS)

    Waldron, W.; Greenway, W.; Eylon, S.; Henestroza, E.; Yu, S.

    2003-01-01

    Insulating materials such as alumina and glass-bonded mica (Mycalex) are used in accelerator systems for high voltage feedthroughs, structural supports, and barriers between high voltage insulating oil and the vacuum beam pipe in induction accelerator cells. Electric fields in the triple points should be minimized to prevent voltage breakdown. Mechanical stress can compromise seals and result in oil contamination of the insulator surface. We have tested various insulator cleaning procedures including ultrasonic cleaning with a variety of aqueous-based detergents, and manual scrubbing with various detergents. Water sheeting tests were used to determine the initial results of the cleaning methods. Ultimately, voltage breakdown tests will be used to quantify the benefits of these cleaning procedures

  7. Abnormal breakdown characteristic in a two-phase mixture

    International Nuclear Information System (INIS)

    Ye Qizheng; Li Jin; Lu Fei

    2006-01-01

    A two-phase mixture (TPM) is a mixture of gas and macroparticles of high concentration. Based on Townsend's theory, a new cell-iterative model in analytical form for the breakdown mechanism in TPM is presented. Compared with the original cell-iterative model in our previous paper, the obstructive factor of the macroparticles that influences the electron avalanche propagation is considered, except for the macroparticles distorting the electrical field and capture of the electrons. The cell attractive parameter k is presented according to the classical continuum theory for field charging. The modified Paschen law for a TPM is presented to calculate the breakdown voltage. The breakdown voltage of the TPM, U TPM , increases gradually with an increase in the macroparticle number density (m). The voltage U TPM is lower than that of the pure gas at low m values and larger at high m values. With a decrease of the macroparticle volume fraction and the dielectric mismatch, the voltage U TPM increases gradually at low m values and decreases gradually at high m values. The voltage U TPM at pd 200 cm Torr is lower than that at pd = 760 cm Torr for low m values and larger for high m values. This kind of abnormal breakdown characteristic in the TPM occurs in the case of high macroparticle volume fraction. On the other hand, the minimum of the TPM's Paschen curve increases with increase in m. It provides the possibility and the conditions of greatly increasing the breakdown voltage in a nearly uniform field

  8. High Current Density Electrical Breakdown of TiS

    NARCIS (Netherlands)

    Molina-Mendoza, Aday J.; Island, J.O.; Paz, Wendel S.; Clamagirand, Jose Manuel; Ares, Josè Ramon; Flores, Eduardo; Leardini, Fabrice; Sánchez, Carlos; Agraït, Nicolás; Rubio-Bollinger, Gabino; van der Zant, H.S.J.; Ferrer, Isabel J.; Palacios, JJ; Castellanos-Gomez, Andres

    2017-01-01

    The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to

  9. Breakdown mechanisms in AlGaN/GaN high electron mobility transistors with different GaN channel thickness values

    International Nuclear Information System (INIS)

    Ma Xiao-Hua; Zhang Ya-Man; Chen Wei-Wei; Wang Xin-Hua; Yuan Ting-Ting; Pang Lei; Liu Xin-Yu

    2015-01-01

    In this paper, the off-state breakdown characteristics of two different AlGaN/GaN high electron mobility transistors (HEMTs), featuring a 50-nm and a 150-nm GaN thick channel layer, respectively, are compared. The HEMT with a thick channel exhibits a little larger pinch-off drain current but significantly enhanced off-state breakdown voltage (BV off ). Device simulation indicates that thickening the channel increases the drain-induced barrier lowering (DIBL) but reduces the lateral electric field in the channel and buffer underneath the gate. The increase of BV off in the thick channel device is due to the reduction of the electric field. These results demonstrate that it is necessary to select an appropriate channel thickness to balance DIBL and BV off in AlGaN/GaN HEMTs. (paper)

  10. Pulsed high voltage discharge induce hematologic changes

    African Journals Online (AJOL)

    STORAGESEVER

    2009-10-19

    Oct 19, 2009 ... Sterilization appears to be the best way to ensure a very high level of safety in transfusion of blood and its ... those of individual proteins. ... MATERIALS AND METHODS ... Schematic diagram of the apparatus for generation of the Pulsed ... different number of pulses (function of exposure time) of high E-.

  11. 30 CFR 77.807-1 - High-voltage powerlines; clearances above ground.

    Science.gov (United States)

    2010-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-1 High-voltage powerlines; clearances above ground. High-voltage powerlines located above driveways, haulageways, and railroad tracks...

  12. Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on tunable functionalized copolymers

    DEFF Research Database (Denmark)

    Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

    2015-01-01

    system, with respect to functionalization, is achieved. It is investigated how the different functionalization variables affect essential DE properties, including dielectric permittivity, dielectric loss, elastic modulus and dielectric breakdown strength, and the optimal degree of chemical......%) was obtained without compromising other vital DE properties such as elastic modulus, gel fraction, dielectric and viscous loss and electrical breakdown strength....

  13. High voltage switch triggered by a laser-photocathode subsystem

    Science.gov (United States)

    Chen, Ping; Lundquist, Martin L.; Yu, David U. L.

    2013-01-08

    A spark gap switch for controlling the output of a high voltage pulse from a high voltage source, for example, a capacitor bank or a pulse forming network, to an external load such as a high gradient electron gun, laser, pulsed power accelerator or wide band radar. The combination of a UV laser and a high vacuum quartz cell, in which a photocathode and an anode are installed, is utilized as triggering devices to switch the spark gap from a non-conducting state to a conducting state with low delay and low jitter.

  14. Temperature Stabilized Characterization of High Voltage Power Supplies

    CERN Document Server

    Krarup, Ole

    2017-01-01

    High precision measurements of the masses of nuclear ions in the ISOLTRAP experiment relies on an MR-ToF. A major source of noise and drift is the instability of the high voltage power supplies employed. Electrical noise and temperature changes can broaden peaks in time-of-flight spectra and shift the position of peaks between runs. In this report we investigate how the noise and drift of high-voltage power supplies can be characterized. Results indicate that analog power supplies generally have better relative stability than digitally controlled ones, and that the high temperature coefficients of all power supplies merit efforts to stabilize them.

  15. High-Capacity, High-Voltage Composite Oxide Cathode Materials

    Science.gov (United States)

    Hagh, Nader M.

    2015-01-01

    This SBIR project integrates theoretical and experimental work to enable a new generation of high-capacity, high-voltage cathode materials that will lead to high-performance, robust energy storage systems. At low operating temperatures, commercially available electrode materials for lithium-ion (Li-ion) batteries do not meet energy and power requirements for NASA's planned exploration activities. NEI Corporation, in partnership with the University of California, San Diego, has developed layered composite cathode materials that increase power and energy densities at temperatures as low as 0 degC and considerably reduce the overall volume and weight of battery packs. In Phase I of the project, through innovations in the structure and morphology of composite electrode particles, the partners successfully demonstrated an energy density exceeding 1,000 Wh/kg at 4 V at room temperature. In Phase II, the team enhanced the kinetics of Li-ion transport and electronic conductivity at 0 degC. An important feature of the composite cathode is that it has at least two components that are structurally integrated. The layered material is electrochemically inactive; however, upon structural integration with a spinel material, the layered material can be electrochemically activated and deliver a large amount of energy with stable cycling.

  16. PC-based control of a high-voltage injector

    International Nuclear Information System (INIS)

    Constantin, F.

    1998-01-01

    The stability of high voltage injectors is one of the major problems in any accelerator system. Most of the troubles encountered in the normal operation of an accelerator are connected with the ion source and associated high voltage platforms, regardless of the source or high voltage generator type. The quality of the ion beam injected in the accelerator strongly depends on the power supplies used in the injector and on the ability to control the non-electrical parameters (gas-flow, temperature, etc.). A wide used method in controlling is based on optical links between high-voltage platform and computer, the adjustments being more or less automated. Although the method mentioned above can be still useful in injector control, a different approach is presented in this work, i.e., the computer itself is placed inside the high-voltage terminal. Only one optical link is still necessary to connect this computer with an user-friendly host at ground potential. Requirements: - varying and monitoring the filament current; - gas flow control in the ion source; - reading the vacuum values; - current and voltage control for the anodic, magnet, extraction, suppression and lens' sources. Even in the high voltage terminal there are compartments with different voltages regardless the floating ground. In our injector the extraction voltage is applied on the top of the ion source including the filament and the anodic voltage. The extraction voltage is of maximum 30 kV. In this situation a second optical link is required to transfer the control for the anodic and magnet source power supply assuming the dedicated computer on the floating ground. One PC is placed inside the high voltage terminal and one PC outside the injector. The optical link (more precisely two optical wires) connects the serial ports. The inside computer is equipped with two multipurpose ADC/DAC and digital I/O card. They permit to read or output DC levels ranging between 0 to 10 volts or TTL signals. The filament

  17. Modeling of long High Voltage AC Underground

    DEFF Research Database (Denmark)

    Gudmundsdottir, Unnur Stella; Bak, Claus Leth; Wiechowski, W. T.

    2010-01-01

    cable models, perform highly accurate field measurements for validating the model and identifying possible disadvantages of the cable model. Furthermore the project suggests and implements improvements and validates them against several field measurements. It is shown in this paper how a new method...

  18. E-beam high voltage switching power supply

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360.degree./n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load.

  19. E-beam high voltage switching power supply

    International Nuclear Information System (INIS)

    Shimer, D.W.; Lange, A.C.

    1997-01-01

    A high power, solid state power supply is described for producing a controllable, constant high voltage output under varying and arcing loads suitable for powering an electron beam gun or other ion source. The present power supply is most useful for outputs in a range of about 100-400 kW or more. The power supply is comprised of a plurality of discrete switching type dc-dc converter modules, each comprising a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, and an output rectifier for producing a dc voltage at the output of each module. The inputs to the converter modules are fed from a common dc rectifier/filter and are linked together in parallel through decoupling networks to suppress high frequency input interactions. The outputs of the converter modules are linked together in series and connected to the input of the transmission line to the load through a decoupling and line matching network. The dc-dc converter modules are phase activated such that for n modules, each module is activated equally 360 degree/n out of phase with respect to a successive module. The phased activation of the converter modules, combined with the square current waveforms out of the step up transformers, allows the power supply to operate with greatly reduced output capacitance values which minimizes the stored energy available for discharge into an electron beam gun or the like during arcing. The present power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle using simulated voltage feedback signals and voltage feedback loops. Circuitry is also provided for sensing incipient arc currents reflected at the output of the power supply and for simultaneously decoupling the power supply circuitry from the arcing load. 7 figs

  20. High-voltage pulsed generator for dynamic fragmentation of rocks.

    Science.gov (United States)

    Kovalchuk, B M; Kharlov, A V; Vizir, V A; Kumpyak, V V; Zorin, V B; Kiselev, V N

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ∼50 ns, current amplitude of ∼6 kA with the 40 Ω active load, and ∼20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  1. High-voltage pulsed generator for dynamic fragmentation of rocks

    Science.gov (United States)

    Kovalchuk, B. M.; Kharlov, A. V.; Vizir, V. A.; Kumpyak, V. V.; Zorin, V. B.; Kiselev, V. N.

    2010-10-01

    A portable high-voltage (HV) pulsed generator has been designed for rock fragmentation experiments. The generator can be used also for other technological applications. The installation consists of low voltage block, HV block, coaxial transmission line, fragmentation chamber, and control system block. Low voltage block of the generator, consisting of a primary capacitor bank (300 μF) and a thyristor switch, stores pulse energy and transfers it to the HV block. The primary capacitor bank stores energy of 600 J at the maximum charging voltage of 2 kV. HV block includes HV pulsed step up transformer, HV capacitive storage, and two electrode gas switch. The following technical parameters of the generator were achieved: output voltage up to 300 kV, voltage rise time of ˜50 ns, current amplitude of ˜6 kA with the 40 Ω active load, and ˜20 kA in a rock fragmentation regime (with discharge in a rock-water mixture). Typical operation regime is a burst of 1000 pulses with a frequency of 10 Hz. The operation process can be controlled within a wide range of parameters. The entire installation (generator, transmission line, treatment chamber, and measuring probes) is designed like a continuous Faraday's cage (complete shielding) to exclude external electromagnetic perturbations.

  2. High voltage diagnostics on electrical insulation of supersonducting magnets

    International Nuclear Information System (INIS)

    Irmisch, M.

    1995-12-01

    The high voltage (HV) performance of superconducting magnets of large dimensions, e.g. as needed in fusion reactors, is a challange in the field of high voltage technology, i.e. especially in the field of cryogenic high voltage components and with respect to questions of HV insulation diagnostics at low temperature. By using the development of POLO - a superconducting prototype coil of a tokamak poloidal field coil - as an example, this work deals with special problems of how to get use of conventional HV test techniques for diagnostics under special cryogenic boundary conditions. As a first approach to gain experience in the field of phase resolved partial discharge (PRPD) measurements during operation of a superconductive coil, the POLO coil was subject to several high voltage tests. Compared with DC insulation resistance measurements and capacitive impulse voltage discharges to the coil, the AC PD measurements have been the only way to observe special characteristics of the electrical insulation with respect to the cooling down of the coil from 300 K to 4.2 K. The PRPD measurement technique thereby has proofed as a suitable diagnostic tool. This work can serve as basic data to be comparable within further projects of electrical insulation diagnostics at cryogenic temperatures. (orig.)

  3. High-Voltage Multiplexing for ATLAS ITk

    CERN Document Server

    Hommels, Bart; The ATLAS collaboration

    2017-01-01

    The High Luminosity upgrade to the Large Hadron Collider (HL-LHC) requires a replacement of the present ATLAS inner tracker with an all-silicon inner tracker (ITk). The outer radii of the ITk will consist of groups of silicon strip sensors mounted on common support structures. Lack of space for additional cabling will require groups of sensors to share a common HV bus (-500 V). This creates a need to remotely disable a failing sensor from the common HV bus to permit continued operation of the other sensors. We have developed circuitry consisting of a Gallium Nitride Field-Effect transistor (GaNFET) and a HV Multiplier circuit to disable a failed sensor. The devices have been shown to survive radiation doses as high as 1 x 1016 neutrons/cm2 and ionizing doses over 200 Mrad. We will present the HV Mux circuitry and show irradiation results on individual components with an emphasis on the GaNFET results with neutrons, protons, pions, and gammas. We will present a dual-stage variation of the HV Mux that will perm...

  4. Design and realization of high voltage disconnector condition monitoring system

    Science.gov (United States)

    Shi, Jinrui; Xu, Tianyang; Yang, Shuixian; Li, Buoyang

    2017-08-01

    The operation status of the high voltage disconnector directly affects the safe and stable operation of the power system. This article uses the wireless frequency hopping communication technology of the communication module to achieve the temperature acquisition of the switch contacts and high voltage bus, to introduce the current value of the loop in ECS, and judge the operation status of the disconnector by considering the ambient temperature, calculating the temperature rise; And through the acquisition of the current of drive motor in the process of switch closing and opening, and fault diagnosis of the disconnector by analyzing the change rule of the drive motor current, the condition monitoring of the high voltage disconnector is realized.

  5. On some aspects of high voltage electron microscopy

    International Nuclear Information System (INIS)

    Jouffrey, B.; Trinquier, J.

    1987-01-01

    The present paper deals with high voltage electron microscopy (HVEM). It is an overview on this domain due to the pionneer work of G. Dupouy which has permitted to perform a new kind of electron microscopy. Since this time, HVEM has shown its interest in high resolution, irradiations, chemical analysis, in situ experiments

  6. High-Voltage, Low-Power BNC Feedthrough Terminator

    Science.gov (United States)

    Bearden, Douglas

    2012-01-01

    This innovation is a high-voltage, lowpower BNC (Bayonet Neill-Concelman) feedthrough that enables the user to terminate an instrumentation cable properly while connected to a high voltage, without the use of a voltage divider. This feedthrough is low power, which will not load the source, and will properly terminate the instrumentation cable to the instrumentation, even if the cable impedance is not constant. The Space Shuttle Program had a requirement to measure voltage transients on the orbiter bus through the Ground Lightning Measurement System (GLMS). This measurement has a bandwidth requirement of 1 MHz. The GLMS voltage measurement is connected to the orbiter through a DC panel. The DC panel is connected to the bus through a nonuniform cable that is approximately 75 ft (approximately equal to 23 m) long. A 15-ft (approximately equal to 5-m), 50-ohm triaxial cable is connected between the DC panel and the digitizer. Based on calculations and simulations, cable resonances and reflections due to mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. A voltage divider at the DC panel, and terminating the 50-ohm cable properly, would eliminate this issue. Due to implementation issues, an alternative design was needed to terminate the cable properly without the use of a voltage divider. Analysis shows how the cable resonances and reflections due to the mismatched impedances of the cable connecting the orbiter bus and the digitizer causes the output not to reflect accurately what is on the bus. After simulating a dampening circuit located at the digitizer, simulations were performed to show how the cable resonances were dampened and the accuracy was improved significantly. Test cables built to verify simulations were accurate. Since the dampening circuit is low power, it can be packaged in a BNC feedthrough.

  7. Computer applications: Automatic control system for high-voltage accelerator

    International Nuclear Information System (INIS)

    Bryukhanov, A.N.; Komissarov, P.Yu.; Lapin, V.V.; Latushkin, S.T.. Fomenko, D.E.; Yudin, L.I.

    1992-01-01

    An automatic control system for a high-voltage electrostatic accelerator with an accelerating potential of up to 500 kV is described. The electronic apparatus on the high-voltage platform is controlled and monitored by means of a fiber-optic data-exchange system. The system is based on CAMAC modules that are controlled by a microprocessor crate controller. Data on accelerator operation are represented and control instructions are issued by means of an alphanumeric terminal. 8 refs., 6 figs

  8. The research of high voltage switchgear detecting unit

    Science.gov (United States)

    Ji, Tong; Xie, Wei; Wang, Xiaoqing; Zhang, Jinbo

    2017-07-01

    In order to understand the status of the high voltage switch in the whole life circle, you must monitor the mechanical and electrical parameters that affect device health. So this paper gives a new high voltage switchgear detecting unit based on ARM technology. It can measure closing-opening mechanical wave, storage motor current wave and contactor temperature to judge the device’s health status. When something goes wrong, it can be on alert and give some advice. The practice showed that it can meet the requirements of circuit breaker mechanical properties temperature online detection.

  9. High voltage pulsed cable design: a practical example

    Energy Technology Data Exchange (ETDEWEB)

    Kewish, R.W. Jr.; Boicourt, G.P.

    1979-01-01

    The design of optimum high voltage pulse cable is difficult because very little emperical data are available on performance in pulsed applications. This paper follows the design and testing of one high voltage pulse cable, 40/100 trigger cable. The design was based on an unproven theory and the impressive outcome lends support to the theory. The theory is outlined and it is shown that there exists an inductance which gives a cable of minimum size for a given maximum stress. Test results on cable manufactured according to the design are presented and compared with the test results on the cable that 40/100 replaces.

  10. High voltage pulsed cable design: a practical example

    International Nuclear Information System (INIS)

    Kewish, R.W. Jr.; Boicourt, G.P.

    1979-01-01

    The design of optimum high voltage pulse cable is difficult because very little emperical data are available on performance in pulsed applications. This paper follows the design and testing of one high voltage pulse cable, 40/100 trigger cable. The design was based on an unproven theory and the impressive outcome lends support to the theory. The theory is outlined and it is shown that there exists an inductance which gives a cable of minimum size for a given maximum stress. Test results on cable manufactured according to the design are presented and compared with the test results on the cable that 40/100 replaces

  11. Copper wire theft and high voltage electrical burns

    Science.gov (United States)

    Francis, Eamon C; Shelley, Odhran P

    2014-01-01

    High voltage electrical burns are uncommon. However in the midst of our economic recession we are noticing an increasing number of these injuries. Copper wire is a valuable commodity with physical properties as an excellent conductor of electricity making it both ubiquitous in society and prized on the black market. We present two consecutive cases referred to the National Burns Unit who sustained life threatening injuries from the alleged theft of high voltage copper wire and its omnipresence on an international scale. PMID:25356371

  12. Amyloid-beta binds catalase with high affinity and inhibits hydrogen peroxide breakdown.

    OpenAIRE

    Milton, N G

    1999-01-01

    Amyloid-beta (Abeta) specifically bound purified catalase with high affinity and inhibited catalase breakdown of H(2)O(2). The Abeta-induced catalase inhibition involved formation of the inactive catalase Compound II and was reversible. CatalaseAbeta interactions provide rapid functional assays for the cytotoxic domain of Abeta and suggest a mechanism for some of the observed actions of Abeta plus catalase in vitro.

  13. High-voltage, high-current, solid-state closing switch

    Science.gov (United States)

    Focia, Ronald Jeffrey

    2017-08-22

    A high-voltage, high-current, solid-state closing switch uses a field-effect transistor (e.g., a MOSFET) to trigger a high-voltage stack of thyristors. The switch can have a high hold-off voltage, high current carrying capacity, and high time-rate-of-change of current, di/dt. The fast closing switch can be used in pulsed power applications.

  14. Digitally Programmable High-Q Voltage Mode Universal Filter

    Directory of Open Access Journals (Sweden)

    D. Singh

    2013-12-01

    Full Text Available A new low-voltage low-power CMOS current feedback amplifier (CFA is presented in this paper. This is used to realize a novel digitally programmable CFA (DPCFA using transistor arrays and MOS switches. The proposed realizations nearly allow rail-to-rail swing capability at all the ports. Class-AB output stage ensures low power dissipation and high current drive capability. The proposed CFA/ DPCFA operates at supply voltage of ±0.75 V and exhibits bandwidth better than 95 MHz. An application of the DPCFA to realize a novel voltage mode high-Q digitally programmable universal filter (UF is given. Performances of all the proposed circuits are verified by PSPICE simulation using TSMC 0.25μm technology parameters.

  15. Integrated reconfigurable high-voltage transmitting circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2015-01-01

    In this paper a high-voltage transmitting circuit aimed for capacitive micromachined ultrasonic transducers (CMUTs) used in scanners for medical applications is designed and implemented in a 0.35 μm high-voltage CMOS process. The transmitting circuit is reconfigurable externally making it able...... to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes with voltages up to 100 V, maximum pulse range of 50 V, frequencies up to 5 MHz and different driving slew rates. Measurements are performed on the circuit in order to assess its functionality and power consumption...... performance. The design occupies an on-chip area of 0.938 mm2 and the power consumption of a 128-element transmitting circuit array that would be used in an portable ultrasound scanner is found to be a maximum of 181 mW....

  16. Development and Breakdown of Goertler Vortices in High Speed Boundary Layers

    Science.gov (United States)

    Li, Fei; Choudhari, Meelan; Chang, Chau-Lyan; Wu, Minwei; Greene, Ptrick T.

    2010-01-01

    The nonlinear development of G rtler instability over a concave surface gives rise to a highly distorted stationary flow in the boundary layer that has strong velocity gradients in both spanwise and wall-normal directions. This distorted flow is susceptible to strong, high frequency secondary instability that leads to the onset of transition. For high Mach number flows, the boundary layer is also subject to the second mode instability. The nonlinear development of G rtler vortices and the ensuing growth and breakdown of secondary instability, the G rtler vortex interactions with second mode instabilities as well as oblique second mode interactions are examined in the context of both internal and external hypersonic configurations using nonlinear parabolized stability equations, 2-D eigenvalue analysis and direct numerical simulation. For G rtler vortex development inside the Purdue Mach 6 Ludwieg tube wind tunnel, multiple families of unstable secondary eigenmodes are identified and their linear and nonlinear evolution is examined. The computation of secondary instability is continued past the onset of transition to elucidate the physical mechanisms underlying the laminar breakdown process. Nonlinear breakdown scenarios associated with transition over a Mach 6 compression cone configuration are also explored.

  17. Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

    International Nuclear Information System (INIS)

    Zhao Linna; Yu Peihong; Yan Dawei; Zhou Hao; Wu Jinbo; Cui Zhiqiang; Gu Xiaofeng; Guo Zixiang; Sun Huarui

    2017-01-01

    The progressive current degradation and breakdown behaviors of GaN-based light emitting diodes under high reverse-bias stress are studied by combining the electrical, optical, and surface morphology characterizations. The current features a typical “soft breakdown” behavior, which is linearly correlated to an increase of the accumulative number of electroluminescence spots. The time-to-failure for each failure site approximately obeys a Weibull distribution with slopes of about 0.67 and 4.09 at the infant and wear-out periods, respectively. After breakdown, visible craters can be observed at the device surface as a result of transient electrostatic discharge. By performing focused ion beam cuts coupled with scan electron microscope, we observed a local current shunt path in the surface layer, caused by the rapid microstructure deterioration due to significant current heating effect, consistent well with the optical beam induced resistance change observations. (paper)

  18. High power thyristors with 5 kV blocking voltage. Volume 1: Development of high-voltage-thyristors (4.5 kV) with good dynamic properties

    Science.gov (United States)

    Lock, K.; Patalong, H.; Platzoeder, K.

    1979-01-01

    Using neutron irradiated silicon with considerably lower spread in resistivity as compared to conventionally doped silicon it was possible to produce power thyristors with breakdown voltages between 3.5 kV and 5.5 kV. The thyristor pellets have a diameter of 50 mm. Maximum average on-state currents of 600 to 800 A can be reached with these elements. The dynamic properties of the thryistors could be improved to allow standard applications up to maximum repetitive voltages of 4.5 kV.

  19. High-voltage short-fall pulse generator

    International Nuclear Information System (INIS)

    Dolbilov, G.V.; Fateev, A.A.; Petrov, V.A.

    1986-01-01

    Powerful high-voltage pulses with short fall times and relatively low afterpulse amplitude are required for the deflection systems of accelerators. A generator is described that provides, into a 75-ohm load, a voltage pulse of up to 100 kV with a fall time of less than 1 nsec and a relative afterpulse amplitude of less than or equal to 15%. The generator employs a short-circuited ferrite-filled line in which shock waves are formed. A magnetic section is used to increase power. The switch is a TGI1-2500/50 thyratron. The main causes of afterpulses and methods for reducing their amplitude are examined

  20. Mass impregnation plant speeds high voltage cable production

    Energy Technology Data Exchange (ETDEWEB)

    1965-05-07

    A mass impregnation and continuous sheath extrusion plant that will eliminate the long period of vacuum treatment usually required for high voltage oil-filled cables is among the latest techniques included in the new factory at Pirelli General's Eastleigh works. The new factory is said to be the first in Europe designed solely for the manufacture of the full range of oil-filled cables. Possible future increases of system voltages to about 750-kV ac or 1000-kV dc have been taken into account in the design of the works, so that only a small amount of modification and new plant will be involved.

  1. Digital measurement system for the LHC klystron high voltage modulator.

    CERN Document Server

    Mikkelsen, Anders

    Accelerating voltage in the Large Hadron Collider (LHC) is created by a means of 16 superconducting standing wave RF cavities, each fed by a 400MHz/300kW continuous wave klystron amplifier. Part of the upgrade program for the LHC long shutdown one is to replace the obsolete analogue current and voltage measurement circuitry located in the high voltage bunkers by a new, digital system, using ADCs and optical fibres. A digital measurement card is implemented and integrated into the current HV modulator oil tank (floating at -58kV) and interfaced to the existing digital VME boards collecting the data for several klystrons at the ground potential. Measured signals are stored for the logging, diagnostics and post-mortem analysis purposes.

  2. Intense neutron source: high-voltage power supply specifications

    International Nuclear Information System (INIS)

    Riedel, A.A.

    1980-08-01

    This report explains the need for and sets forth the electrical, mechanical and safety specifications for a high-voltage power supply to be used with the intense neutron source. It contains sufficient information for a supplier to bid on such a power supply

  3. A Review of High Voltage Drive Amplifiers for Capacitive Actuators

    DEFF Research Database (Denmark)

    Huang, Lina; Zhang, Zhe; Andersen, Michael A. E.

    2012-01-01

    This paper gives an overview of the high voltage amplifiers, which are used to drive capacitive actuators. The amplifiers for both piezoelectric and DEAP (dielectric electroactive polymer) actuator are discussed. The suitable topologies for driving capacitive actuators are illustrated in detail...

  4. Switching phenomena in high-voltage circuit breakers

    International Nuclear Information System (INIS)

    Nakanishi, K.

    1991-01-01

    The topics covered in this book include: general problems concerning current interruption, the physical arc model, and miscellaneous types of modern switching apparatus, such as gas circuit breakers, gas-insulated switch-gear, vacuum circuit breakers and high-voltage direct-current circuit breakers

  5. High voltage transmission of electrical energy over long distances

    Energy Technology Data Exchange (ETDEWEB)

    Tewari, S W

    1962-07-01

    Technical aspects of ac transmission lines, additional means of improving stability ac transmisson lines, insulation problems, ac transmission by cables, high voltage dc transmission, advantages of dc over ac transmission, disadvantages of dc transmission, use of underground cables for dc transmission, history of the development of conversion equipment; transmission schemes adopted on Gotland Island, Sweden; and economics of ac and dc transmission are discussed.

  6. High Voltage Electrical Injuries In The University Of Calabar ...

    African Journals Online (AJOL)

    Even when patients present relatively early and are resuscitated and treated, complete prosthetic rehabilitation is difficult because of poverty and lack of social support systems. Case Report: This review presents three cases of high voltage electrical burns resulting from typical 11KVA burns as well as lightning strike.

  7. Proximity effects of high voltage electric power transmission lines on ...

    African Journals Online (AJOL)

    The proximity effects of high voltage electric power transmission lines on Leyland Cypress (xCupressocyparis leylandii (Dallim. and A.B. Jacks.) Dallim) and Japanese Privet (Ligustrum japonicum Thunb.) growth were examined in a private nursery located in Sakarya, Turkey. Five transect were randomly chosen in both ...

  8. Medium and high voltage power cables market in Europe

    International Nuclear Information System (INIS)

    Kupiec, M.

    1992-06-01

    This note gives an overview of the European market for medium and high voltage power cables. In this text, emphasis is placed on suppliers and important European clients; there is also a brief review of the different techniques for cable laying and utilization in Europe. This not has mainly been drafted from informations supplied by EUROPACABLE

  9. 30 CFR 77.804 - High-voltage trailing cables; minimum design requirements.

    Science.gov (United States)

    2010-07-01

    ... OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.804 High-voltage trailing cables; minimum design requirements. (a) High-voltage trailing cables used in resistance grounded systems shall be... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage trailing cables; minimum design...

  10. Radiation tests on selected electrical insulating materials for high-power and high voltage application

    International Nuclear Information System (INIS)

    Liptak, G.; Schuler, R.; Haberthuer, B.; Mueller, H.; Zeier, W.; Maier, P.; Schoenbacher, H.

    1985-01-01

    This report presents a comprehensive set of test results on the irradiation of insulating materials and systems used for the windings of rotating machines, dry-type transformers, and magnet coils. The materials were: Novolac, bisphenol-A, and cycloaliphatic types of epoxy; saturated and unsaturated polyesterimide; silicone, phenolic, and acrylic resins. The reinforcement consisted of glass mat, glass roving, glass cloth, mica paper, polyester mat, polyester roving, polyester cloth, aromatic polyamide paper, or combinations thereof. The materials were irradiated in an 8 MW pool reactor up to integrated doses of 10 8 Gy. On most samples, flexural properties were examined as recommended by IEC Standard 544. For tapes and varnishes, the breakdown voltage was measured. The adhesion of copper bars glued together with an epoxy resin was examined by means of a lap-shear test. A cupping test by means of the Erichsen apparatus was used to measure the flexibility of varnishes. The results are presented in tables and graphs for each of the materials tested. Those from mechanical tests show that the radiation resistance of composite resin-rich insulations depends not only on the base resin combination and the reinforcement material but, to a large degree, also on the adhesion between the two. It appears that better adhesion, and consequently higher radiation resistance, is obtained by special surface treatments of glass fibres. For laminates, higher radiation resistance is obtained with glass mat and resin combinations than with glass cloth as reinforcing materials. The breakdown voltage tests show that the application of mechanical stress to most irradiated samples causes the insulation layer to crack, resulting in lower dielectric strength. For a number of materials, the critical properties of flexural strength and breakdown voltage are above 50% of the initial value at doses between 10 7 and 10 8 Gy, i.e. a radiation index of 7 to 8 at 10 5 Gy/h. (orig.)

  11. High-voltage pulse generator synchronous with LINAC

    International Nuclear Information System (INIS)

    Muto, M.; Hiratsuka, Yoshio; Niimura, Nobuo

    1974-01-01

    High-voltage pulse generator (H.V. Flip-Flop) No.2, an improved type of No.1, is described, which is used in the structural analysis of transient phenomena in materials through the neutron TOF with a Linac. The method of producing positive and negative high-voltage pulses synchronous with the Linac is identical with that in No.1. However, No.2 has outstanding features as follows: (1) The rise time of output pulses is reduced to 0.3 msec, due to the improvement of switching circuit and the winding of a step-up transformer; (2) The widths of positive and negative pulses are variable up to maximum 8 and 16 frames, respectively (One frame = 10 msec); (3) The distribution of TOF signals from a BF 3 counter to a time analyzer is possible even in the negative voltage duration. The panel is provided with the switches for choosing pulse width and the frame for analysis, as well as the dials for setting positive/negative pulse voltage values and the respective indicating meters. (Mori, K)

  12. Electronic Current Transducer (ECT) for high voltage dc lines

    Science.gov (United States)

    Houston, J. M.; Peters, P. H., Jr.; Summerayes, H. R., Jr.; Carlson, G. J.; Itani, A. M.

    1980-02-01

    The development of a bipolar electronic current transducer (ECT) for measuring the current in a high voltage dc (HVDC) power line at line potential is discussed. The design and construction of a free standing ECT for use on a 400 kV line having a nominal line current of 2000 A is described. Line current is measured by a 0.0001 ohm shunt whose voltage output is sampled by a 14 bit digital data link. The high voltage interface between line and ground is traversed by optical fibers which carry digital light signals as far as 300 m to a control room where the digital signal is converted back to an analog representation of the shunt voltage. Two redundant electronic and optical data links are used in the prototype. Power to operate digital and optical electronics and temperature controlling heaters at the line is supplied by a resistively and capacitively graded 10 stage cascade of ferrite core transformers located inside the hollow, SF6 filled, porcelain support insulator. The cascade is driven by a silicon controlled rectifier inverter which supplies about 100 W of power at 30 kHz.

  13. Topologically protected loop flows in high voltage AC power grids

    International Nuclear Information System (INIS)

    Coletta, T; Delabays, R; Jacquod, Ph; Adagideli, I

    2016-01-01

    Geographical features such as mountain ranges or big lakes and inland seas often result in large closed loops in high voltage AC power grids. Sizable circulating power flows have been recorded around such loops, which take up transmission line capacity and dissipate but do not deliver electric power. Power flows in high voltage AC transmission grids are dominantly governed by voltage angle differences between connected buses, much in the same way as Josephson currents depend on phase differences between tunnel-coupled superconductors. From this previously overlooked similarity we argue here that circulating power flows in AC power grids are analogous to supercurrents flowing in superconducting rings and in rings of Josephson junctions. We investigate how circulating power flows can be created and how they behave in the presence of ohmic dissipation. We show how changing operating conditions may generate them, how significantly more power is ohmically dissipated in their presence and how they are topologically protected, even in the presence of dissipation, so that they persist when operating conditions are returned to their original values. We identify three mechanisms for creating circulating power flows, (i) by loss of stability of the equilibrium state carrying no circulating loop flow, (ii) by tripping of a line traversing a large loop in the network and (iii) by reclosing a loop that tripped or was open earlier. Because voltages are uniquely defined, circulating power flows can take on only discrete values, much in the same way as circulation around vortices is quantized in superfluids. (paper)

  14. BANSHEE: High-voltage repetitively pulsed electron-beam driver

    International Nuclear Information System (INIS)

    VanHaaften, F.

    1992-01-01

    BANSHEE (Beam Accelerator for a New Source of High-Energy Electrons) this is a high-voltage modulator is used to produce a high-current relativistic electron beam for high-power microwave tube development. The goal of the BANSHEE research is first to achieve a voltage pulse of 700--750 kV with a 1-μs pulse width driving a load of ∼100 Ω, the pulse repetition frequency (PRF) of a few hertz. The ensuing goal is to increase the pulse amplitude to a level approaching 1 MV. We conducted tests using half the modulator with an output load of 200 Ω, up to a level of ∼650 kV at a PRF of 1 Hz and 525 kV at a PRF of 5 Hz. We then conducted additional testing using the complete system driving a load of ∼100 Ω

  15. High-voltage variable-duration pulse generator

    International Nuclear Information System (INIS)

    Anisimova, T.E.; Akkuratov, E.V.; Gromovenko, V.M.; Nikonov, Yu.P.; Malinin, A.N.

    1988-01-01

    A high-voltage generator is described that allows pulse duration tau to be varied within wide limits and has high efficiency (at least 50% for tau = 0.5 tau/sub max/) and an amplitude of up to 5 kV, a repetition frequency of up to 200 Hz,and a variable duration of 0-30 μsec. The generator is used in the controller of an electron accelerator

  16. Design of the corona current measurement sensor with wide bandwidth under dc ultra-high-voltage environment

    International Nuclear Information System (INIS)

    Liu, Yingyi; Yuan, Haiwen; Yang, Qinghua; Cui, Yong

    2011-01-01

    The research in the field of corona discharge, which is one of the key technologies, can help us to realize ultra-high-voltage (UHV) power transmission. This paper proposes a new sampling resistance sensor to measure the dc UHV corona current in a wide band. By designing the structural and distributed parameters of the sensor, the UHV dielectric breakdown performance and the wide-band measuring characteristics of the sensor are satisfied. A high-voltage discharge test shows that the designed sensor can work under a 1200 kV dc environment without the occurrence of corona discharge. A frequency characteristic test shows that the measuring bandwidth of the sensor can be improved from the current 4.5 to 20 MHz. The test results in an actual dc UHV transmission line demonstrate that the sensor can accurately measure the corona current under the dc UHV environment

  17. Square-Wave Voltage Injection Algorithm for PMSM Position Sensorless Control With High Robustness to Voltage Errors

    DEFF Research Database (Denmark)

    Ni, Ronggang; Xu, Dianguo; Blaabjerg, Frede

    2017-01-01

    relationship with the magnetic field distortion. Position estimation errors caused by higher order harmonic inductances and voltage harmonics generated by the SVPWM are also discussed. Both simulations and experiments are carried out based on a commercial PMSM to verify the superiority of the proposed method......Rotor position estimated with high-frequency (HF) voltage injection methods can be distorted by voltage errors due to inverter nonlinearities, motor resistance, and rotational voltage drops, etc. This paper proposes an improved HF square-wave voltage injection algorithm, which is robust to voltage...... errors without any compensations meanwhile has less fluctuation in the position estimation error. The average position estimation error is investigated based on the analysis of phase harmonic inductances, and deduced in the form of the phase shift of the second-order harmonic inductances to derive its...

  18. 30 CFR 75.705-2 - Repairs to energized surface high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized surface high-voltage lines... Repairs to energized surface high-voltage lines. An energized high-voltage surface line may be repaired... on power circuits with a phase-to-phase nominal voltage no greater than 15,000 volts; (3) Such...

  19. High-voltage pixel sensors for ATLAS upgrade

    Energy Technology Data Exchange (ETDEWEB)

    Perić, I., E-mail: ivan.peric@ziti.uni-heidelberg.de [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Kreidl, C.; Fischer, P. [Heidelberg University, Institute of Computer Engineering, Mannheim (Germany); Bompard, F.; Breugnon, P.; Clemens, J.-C.; Fougeron, D.; Liu, J.; Pangaud, P.; Rozanov, A.; Barbero, M. [CPPM, Marseille (France); Feigl, S.; Capeans, M.; Ferrere, D.; Pernegger, H.; Ristic, B. [CERN, Geneve (Switzerland); Muenstermann, D.; Gonzalez Sevilla, S.; La Rosa, A.; Miucci, A. [University of Geneve (Switzerland); and others

    2014-11-21

    The high-voltage (HV-) CMOS pixel sensors offer several good properties: a fast charge collection by drift, the possibility to implement relatively complex CMOS in-pixel electronics and the compatibility with commercial processes. The sensor element is a deep n-well diode in a p-type substrate. The n-well contains CMOS pixel electronics. The main charge collection mechanism is drift in a shallow, high field region, which leads to a fast charge collection and a high radiation tolerance. We are currently evaluating the use of the high-voltage detectors implemented in 180 nm HV-CMOS technology for the high-luminosity ATLAS upgrade. Our approach is replacing the existing pixel and strip sensors with the CMOS sensors while keeping the presently used readout ASICs. By intelligence we mean the ability of the sensor to recognize a particle hit and generate the address information. In this way we could benefit from the advantages of the HV sensor technology such as lower cost, lower mass, lower operating voltage, smaller pitch, smaller clusters at high incidence angles. Additionally we expect to achieve a radiation hardness necessary for ATLAS upgrade. In order to test the concept, we have designed two HV-CMOS prototypes that can be readout in two ways: using pixel and strip readout chips. In the case of the pixel readout, the connection between HV-CMOS sensor and the readout ASIC can be established capacitively.

  20. High-voltage, high-power architecture considerations

    International Nuclear Information System (INIS)

    Moser, R.L.

    1985-01-01

    Three basic EPS architectures, direct energy transfer, peak-power tracking, and a potential EPS architecture for a nuclear reactor are described and compared. Considerations for the power source and energy storage are discussed. Factors to be considered in selecting the operating voltage are pointed out. Other EPS architecture considerations are autonomy, solar array degrees of freedom, and EPS modularity. It was concluded that selection of the power source and energy storage has major impacts on the spacecraft architecture and mass

  1. High-voltage pulsed life of multistressed polypropylene capacitor dielectric

    International Nuclear Information System (INIS)

    Laghari, J.R.

    1992-01-01

    High-voltage polypropylene capacitors were aged under singular as well as simultaneous multiple stresses (electrical, thermal, and radiation) at the University of Buffalo's 2 MW thermal nuclear reactor. These stresses were combined neutron-gamma radiation with a total dose of 1.6 x 10 6 rad, electrical stress at 40 V rms /μm, and thermal stress at 90 degrees C. After exposure, the polypropylene dielectric was tested for life (number of pulses to fail) under high-voltage high-repetition-rate (100 pps) pulses. Pulsed life data were also compared with ac life data. Results show that radiation stress causes the most degradation in life, either acting alone or in combination with other stresses. The largest reduction in life occurs when polypropylene is aged under simultaneous multiple stresses (electrical, thermal, and radiation). In this paper, it is shown that pulsed life can be equivalently compared with ac life

  2. High voltage dc-dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, Daniel W.; Lange, Arnold C.

    1995-01-01

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules.

  3. High voltage dc--dc converter with dynamic voltage regulation and decoupling during load-generated arcs

    Science.gov (United States)

    Shimer, D.W.; Lange, A.C.

    1995-05-23

    A high-power power supply produces a controllable, constant high voltage output under varying and arcing loads. The power supply includes a voltage regulator, an inductor, an inverter for producing a high frequency square wave current of alternating polarity, an improved inverter voltage clamping circuit, a step up transformer, an output rectifier for producing a dc voltage at the output of each module, and a current sensor for sensing output current. The power supply also provides dynamic response to varying loads by controlling the voltage regulator duty cycle and circuitry is provided for sensing incipient arc currents at the output of the power supply to simultaneously decouple the power supply circuitry from the arcing load. The power supply includes a plurality of discrete switching type dc--dc converter modules. 5 Figs.

  4. A High-Voltage SOI CMOS Exciter Chip for a Programmable Fluidic Processor System.

    Science.gov (United States)

    Current, K W; Yuk, K; McConaghy, C; Gascoyne, P R C; Schwartz, J A; Vykoukal, J V; Andrews, C

    2007-06-01

    A high-voltage (HV) integrated circuit has been demonstrated to transport fluidic droplet samples on programmable paths across the array of driving electrodes on its hydrophobically coated surface. This exciter chip is the engine for dielectrophoresis (DEP)-based micro-fluidic lab-on-a-chip systems, creating field excitations that inject and move fluidic droplets onto and about the manipulation surface. The architecture of this chip is expandable to arrays of N X N identical HV electrode driver circuits and electrodes. The exciter chip is programmable in several senses. The routes of multiple droplets may be set arbitrarily within the bounds of the electrode array. The electrode excitation waveform voltage amplitude, phase, and frequency may be adjusted based on the system configuration and the signal required to manipulate a particular fluid droplet composition. The voltage amplitude of the electrode excitation waveform can be set from the minimum logic level up to the maximum limit of the breakdown voltage of the fabrication technology. The frequency of the electrode excitation waveform can also be set independently of its voltage, up to a maximum depending upon the type of droplets that must be driven. The exciter chip can be coated and its oxide surface used as the droplet manipulation surface or it can be used with a top-mounted, enclosed fluidic chamber consisting of a variety of materials. The HV capability of the exciter chip allows the generated DEP forces to penetrate into the enclosed chamber region and an adjustable voltage amplitude can accommodate a variety of chamber floor thicknesses. This demonstration exciter chip has a 32 x 32 array of nominally 100 V electrode drivers that are individually programmable at each time point in the procedure to either of two phases: 0deg and 180deg with respect to the reference clock. For this demonstration chip, while operating the electrodes with a 100-V peak-to-peak periodic waveform, the maximum HV electrode

  5. Bottlenecks reduction using superconductors in high voltage transmission lines

    Directory of Open Access Journals (Sweden)

    Daloub Labib

    2016-01-01

    Full Text Available Energy flow bottlenecks in high voltage transmission lines known as congestions are one of the challenges facing power utilities in fast developing countries. Bottlenecks occur in selected power lines when transmission systems are operated at or beyond their transfer limits. In these cases, congestions result in preventing new power supply contracts, infeasibility in existing contracts, price spike and market power abuse. The “Superconductor Technology” in electric power transmission cables has been used as a solution to solve the problem of bottlenecks in energy transmission at high voltage underground cables and overhead lines. The increase in demand on power generation and transmission happening due to fast development and linked to the intensive usage of transmission network in certain points, which in turn, lead to often frequent congestion in getting the required power across to where it is needed. In this paper, a bottleneck in high voltage double overhead transmission line with Aluminum Conductor Steel Reinforced was modeled using conductor parameters and replaced by Gap-Type Superconductor to assess the benefit of upgrading to higher temperature superconductor and obtain higher current carrying capacity. This proved to reduce the high loading of traditional aluminum conductors and allow more power transfer over the line using superconductor within the same existing right-of-way, steel towers, insulators and fittings, thus reducing the upgrade cost of building new lines.

  6. Experimental Study of the Effect of Beam Loading on RF Breakdown Rate in CLIC High-Gradient Accelerating Structures

    CERN Document Server

    Tecker, F; Kelisani, M; Doebert, S; Grudiev, A; Quirante, J; Riddone, G; Syratchev, I; Wuensch, W; Kononenko, O; Solodko, A; Lebet, S

    2013-01-01

    RF breakdown is a key issue for the multi-TeV highluminosity e+e- Compact Linear Collider (CLIC). Breakdowns in the high-gradient accelerator structures can deflect the beam and decrease the desired luminosity. The limitations of the accelerating structures due to breakdowns have been studied so far without a beam present in the structure. The presence of the beam modifies the distribution of the electrical and magnetic field distributions, which determine the breakdown rate. Therefore an experiment has been designed for high power testing a CLIC prototype accelerating structure with a beam present in the CLIC Test Facility (CTF3). A special beam line allows extracting a beam with nominal CLIC beam current and duration from the CTF3 linac. The paper describes the beam optics design for this experimental beam line and the commissioning of the experiment with beam.

  7. Atypical Exit Wound in High-Voltage Electrocution.

    Science.gov (United States)

    Parakkattil, Jamshid; Kandasamy, Shanmugam; Das, Siddhartha; Devnath, Gerard Pradeep; Chaudhari, Vinod Ashok; Shaha, Kusa Kumar

    2017-12-01

    Electrocution fatality cases are difficult to investigate. High-voltage electrocution burns resemble burns caused by other sources, especially if the person survives for few days. In that case, circumstantial evidence if correlated with the autopsy findings helps in determining the cause and manner of death. In addition, the crime scene findings also help to explain the pattern of injuries observed at autopsy. A farmer came in contact with a high-voltage transmission wire and sustained superficial to deep burns over his body. A charred and deeply scorched area was seen over the face, which was suggestive of the electric entry wound. The exit wound was present over both feet and lower leg and was atypical in the form of a burnt area of peeled blistered skin, charring, and deep scorching. The injuries were correlated with crime scene findings, and the circumstances that lead to his electrocution are discussed here.

  8. Cavallo's multiplier for in situ generation of high voltage

    Science.gov (United States)

    Clayton, S. M.; Ito, T. M.; Ramsey, J. C.; Wei, W.; Blatnik, M. A.; Filippone, B. W.; Seidel, G. M.

    2018-05-01

    A classic electrostatic induction machine, Cavallo's multiplier, is suggested for in situ production of very high voltage in cryogenic environments. The device is suitable for generating a large electrostatic field under conditions of very small load current. Operation of the Cavallo multiplier is analyzed, with quantitative description in terms of mutual capacitances between electrodes in the system. A demonstration apparatus was constructed, and measured voltages are compared to predictions based on measured capacitances in the system. The simplicity of the Cavallo multiplier makes it amenable to electrostatic analysis using finite element software, and electrode shapes can be optimized to take advantage of a high dielectric strength medium such as liquid helium. A design study is presented for a Cavallo multiplier in a large-scale, cryogenic experiment to measure the neutron electric dipole moment.

  9. High voltage processing of the SLC polarized electron gun

    International Nuclear Information System (INIS)

    Saez, P.; Clendenin, J.; Garden, C.; Hoyt, E.; Klaisner, L.; Prescott, C.; Schultz, D.; Tang, H.

    1993-04-01

    The SLC polarized electron gun operates at 120 kV with very low dark current to maintain the ultra high vacuum (UHV). This strict requirement protects the extremely sensitive photocathode from contaminants caused by high voltage (HV) activity. Thorough HV processing is thus required x-ray sensitive photographic film, a nanoammeter in series with gun power supply, a radiation meter, a sensitive residual gas analyzer and surface x-ray spectrometry were used to study areas in the gun where HV activity occurred. By reducing the electric field gradients, carefully preparing the HV surfaces and adhering to very strict clean assembly procedures, we found it possible to process the gun so as to reduce both the dark current at operating voltage and the probability of HV discharge. These HV preparation and processing techniques are described

  10. A high open-circuit voltage gallium nitride betavoltaic microbattery

    International Nuclear Information System (INIS)

    Cheng, Zaijun; Chen, Xuyuan; San, Haisheng; Feng, Zhihong; Liu, Bo

    2012-01-01

    A high open-circuit voltage betavoltaic microbattery based on a gallium nitride (GaN) p–i–n homojunction is demonstrated. As a beta-absorbing layer, the low electron concentration of the n-type GaN layer is achieved by the process of Fe compensation doping. Under the irradiation of a planar solid 63 Ni source with activity of 0.5 mCi, the open-circuit voltage of the fabricated microbattery with 2 × 2 mm 2 area reaches as much as 1.64 V, which is the record value reported for betavoltaic batteries with 63 Ni source, the short-circuit current was measured as 568 pA and the conversion effective of 0.98% was obtained. The experimental results suggest that GaN is a high-potential candidate for developing the betavoltaic microbattery. (paper)

  11. High-voltage direct-current circuit breakers

    International Nuclear Information System (INIS)

    Yoshioka, Y.; Hirasawa, K.

    1991-01-01

    This paper reports that in 1954 the first high-voltage direct-current (HVDC) transmission system was put into operation between Gotland and the mainland of Sweden. Its system voltage and capacity were 100 kV and 20 MW, respectively. Since then many HVDC transmission systems have been planned, constructed, or commissioned in more than 30 places worldwide, and their total capacity is close to 40 GW. Most systems commissioned to date are two-terminal schemes, and HVDC breakers are not yet used in the high-potential main circuit of those systems, because the system is expected to perform well using only converter/inverter control even at a fault stage of the transmission line. However, even in a two-terminal scheme there are not a few merits in using an HVDC breaker when the system has two parallel transmission lines, that is, when it is a double-circuit system

  12. A high-voltage triggered pseudospark discharge experiment

    International Nuclear Information System (INIS)

    Ramaswamy, K.; Destler, W.W.; Rodgers, J.

    1996-01-01

    The design and execution of a pulsed high-voltage (350 endash 400 keV) triggered pseudospark discharge experiment is reported. Experimental studies were carried out to obtain an optimal design for stable and reliable pseudospark operation in a high-voltage regime (approx-gt 350 kV). Experiments were performed to determine the most suitable fill gas for electron-beam formation. The pseudospark discharge is initiated by a trigger mechanism involving a flashover between the trigger electrode and hollow cathode housing. Experimental results characterizing the electron-beam energy using the range-energy method are reported. Source size imaging was carried out using an x-ray pinhole camera and a novel technique using Mylar as a witness plate. It was experimentally determined that strong pinching occurred later in time and was associated with the lower-energy electrons. copyright 1996 American Institute of Physics

  13. Characteristics of Partial Discharge and Ozone Generation for Twisted-pair of Enameled Wires under High-repetitive Impulse Voltage Application

    Science.gov (United States)

    Kanazawa, Seiji; Enokizono, Masato; Shibakita, Toshihide; Umehara, Eiji; Toshimitsu, Jun; Ninomiya, Shinji; Taniguchi, Hideki; Abe, Yukari

    In recent years, inverter drive machines such as a hybrid vehicle and an electric vehicle are operated under high voltage pulse with high repetition rate. In this case, inverter surge is generated and affected the machine operation. Especially, the enameled wire of a motor is deteriorated due to the partial discharge (PD) and finally breakdown of the wire will occur. In order to investigate a PD on a resistant enameled wire, characteristics of PD in the twisted pair sample under bipolar repetitive impulse voltages are investigated experimentally. The relationship between the applied voltage and discharge current was measured at PD inception and extinction, and we estimated the repetitive PD inception and extinction voltages experimentally. The corresponding optical emission of the discharge was also observed by using an ICCD camera. Furthermore, ozone concentration due to the discharge was measured during the life-time test of the resistant enameled wires from a working environmental point of view.

  14. Design and implementation of the wireless high voltage control system

    International Nuclear Information System (INIS)

    Srivastava, Saurabh; Misra, A.; Pandey, H.K.; Thakur, S.K.; Pandit, V.S.

    2011-01-01

    In this paper we will describe the implementation of the wireless link for controlling and monitoring the serial data between control PC and the interface card (general DAQ card), by replacing existing RS232 based remote control system for controlling and monitoring High Voltage Power Supply (120kV/50mA). The enhancement in the reliability is achieved by replacing old RS232 based control system with wireless system by isolating ground loop. (author)

  15. Current voltage characteristics of composite superconductors with high contact resistance

    International Nuclear Information System (INIS)

    Akhmetov, A.A.; Baev, V.P.

    1984-01-01

    An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

  16. Adventitious X-radiation from high voltage equipment

    International Nuclear Information System (INIS)

    Martin, E.B.M.

    1979-01-01

    The monograph is concerned with hazards of unwanted x-rays from sources such as television receivers, high voltage equipment, radar transmitters, switchgear and electron beam apparatus for welding, evaporation, analysis and microscopy. Chapters are included on units, production of x radiation, biological effects, protection standards, radiation monitoring, shielding and control of access, medical and dosimetric supervision and types of equipment. A bibliography of 92 references and other cited literature is included. (U.K.)

  17. High-voltage therapy of carcinoma of the prostate

    International Nuclear Information System (INIS)

    Schnorr, D.; Kelly, L.U.; Guddat, H.M.; Schubert, J.; Gorski, J.; Schorcht, J.; Mau, S.; Wehnert, J.; Medizinische Akademie, Dresden

    1983-01-01

    High-voltage therapy is becoming increasingly important as a form of individual differential therapy of carcinoma of the prostate. Around 40% of all patients with a diagnosis of carcinoma of the prostate can be treated with high-voltage therapy. The precondition is the absence of bone and soft tissue metastases and of juxtaregional lymph node metastases. Individual carcinoma therapy is based on pre therapeutic tumor classification according to the TNM system. The 5-year survival rates are presented from a retrospective study carried out using primary radiation monotherapy and a combined hormone and radiation therapy; these figures were calculated by the life-table method. The study revealed no significant differences between the two forms of therapy as regards 5-year survival rates. The 5-year survival rates of all patients of the classifications T 0 -T 3 N/sub x/-N 2 M 0 irradiated (n: 198) (72% +- 11% for hormone plus radiation therapy and 74% +- 11% for radiation monotherapy) did not differ greatly from those of a normal male population of the same age (77%). High-voltage therapy of carcinoma of the prostate can thus be classified as a curative method of treatment. (author)

  18. High voltage generator circuit with low power and high efficiency applied in EEPROM

    International Nuclear Information System (INIS)

    Liu Yan; Zhang Shilin; Zhao Yiqiang

    2012-01-01

    This paper presents a low power and high efficiency high voltage generator circuit embedded in electrically erasable programmable read-only memory (EEPROM). The low power is minimized by a capacitance divider circuit and a regulator circuit using the controlling clock switch technique. The high efficiency is dependent on the zero threshold voltage (V th ) MOSFET and the charge transfer switch (CTS) charge pump. The proposed high voltage generator circuit has been implemented in a 0.35 μm EEPROM CMOS process. Measured results show that the proposed high voltage generator circuit has a low power consumption of about 150.48 μW and a higher pumping efficiency (83.3%) than previously reported circuits. This high voltage generator circuit can also be widely used in low-power flash devices due to its high efficiency and low power dissipation. (semiconductor integrated circuits)

  19. Design and Implementation of a High-Voltage Generator with Output Voltage Control for Vehicle ER Shock-Absorber Applications

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2013-01-01

    Full Text Available A self-oscillating high-voltage generator is proposed to supply voltage for a suspension system in order to control the damping force of an electrorheological (ER fluid shock absorber. By controlling the output voltage level of the generator, the damping force in the ER fluid shock absorber can be adjusted immediately. The shock absorber is part of the suspension system. The high-voltage generator drives a power transistor based on self-excited oscillation, which converts dc to ac. A high-frequency transformer with high turns ratio is used to increase the voltage. In addition, the system uses the car battery as dc power supply. By regulating the duty cycle of the main switch in the buck converter, the output voltage of the buck converter can be linearly adjusted so as to obtain a specific high voltage for ER. The driving system is self-excited; that is, no additional external driving circuit is required. Thus, it reduces cost and simplifies system structure. A prototype version of the actual product is studied to measure and evaluate the key waveforms. The feasibility of the proposed system is verified based on experimental results.

  20. High voltage power supplies for INDUS-2 RF system

    International Nuclear Information System (INIS)

    Badapanda, M.K.; Hannurkar, P.R.

    2003-01-01

    The RF system of Indus-2 employs klystron amplifiers operating at 505.812 MHz. A precession controlled high voltage DC supply of appropriate rating is needed for each klystron amplifier, as its bias supply. Since internal flashover and arcing are common with the operation of these klystrons and stored energies beyond particular limit inside its bias power supply is detrimental to this device, a properly designed crowbar is incorporated between each klystron and its power supply. This crowbar bypass these stored energies and helps protecting klystron under any of these unfavorable conditions. In either case, power supply sees a near short circuit across its load. So, its power circuit is designed to reduce the fault current level and its various components are also designed to withstand these fault currents, as and when it appears. Finally, operation of these high voltage power supplies (HVPS) generates lot of harmonics on the source side, which distort the input waveform substantially and reduces the input power factor also. Source multiplication between two power supplies are planned to improve upon above parameters and suitable detuned line filters are incorporated to keep the input voltage total harmonics distortion (THD) below 5 % and input power factor (IFF) near unity. (author)

  1. A technique for simultaneously improving the product of cutoff frequency-breakdown voltage and thermal stability of SOI SiGe HBT

    Science.gov (United States)

    Fu, Qiang; Zhang, Wan-Rong; Jin, Dong-Yue; Zhao, Yan-Xiao; Wang, Xiao

    2016-12-01

    The product of the cutoff frequency and breakdown voltage (fT×BVCEO) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N+-buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of fT×BVCEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness (TBOX) on fT, BVCEO, and the FOM of fT×BVCEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces fT, slightly increases BVCEO to some extent, but ultimately degrades the FOM of fT×BVCEO. Although the fT, BVCEO, and the FOM of fT×BVCEO can be improved by increasing SOI insulator SiO2 layer thickness TBOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick TBOX, a thin N+-buried layer is introduced into collector region to not only improve the FOM of fT×BVCEO, but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N+-buried layer in collector region is investigated in detail. The result show that the FOM of fT×BVCEO is improved and the device temperature decreases as the N+-buried layer shifts toward SOI substrate insulation layer. The approach to introducing a thin N+-buried layer

  2. A technique for simultaneously improving the product of cutoff frequency–breakdown voltage and thermal stability of SOI SiGe HBT

    International Nuclear Information System (INIS)

    Fu Qiang; Zhang Wan-Rong; Jin Dong-Yue; Zhao Yan-Xiao; Wang Xiao

    2016-01-01

    The product of the cutoff frequency and breakdown voltage ( f T ×BV CEO ) is an important figure of merit (FOM) to characterize overall performance of heterojunction bipolar transistor (HBT). In this paper, an approach to introducing a thin N + -buried layer into N collector region in silicon-on-insulator (SOI) SiGe HBT to simultaneously improve the FOM of f T ×BV CEO and thermal stability is presented by using two-dimensional (2D) numerical simulation through SILVACO device simulator. Firstly, in order to show some disadvantages of the introduction of SOI structure, the effects of SOI insulation layer thickness ( T BOX ) on f T , BV CEO , and the FOM of f T ×BV CEO are presented. The introduction of SOI structure remarkably reduces the electron concentration in collector region near SOI substrate insulation layer, obviously reduces f T , slightly increases BV CEO to some extent, but ultimately degrades the FOM of f T ×BV CEO . Although the f T , BV CEO , and the FOM of f T ×BV CEO can be improved by increasing SOI insulator SiO 2 layer thickness T BOX in SOI structure, the device temperature and collector current are increased due to lower thermal conductivity of SiO 2 layer, as a result, the self-heating effect of the device is enhanced, and the thermal stability of the device is degraded. Secondly, in order to alleviate the foregoing problem of low electron concentration in collector region near SOI insulation layer and the thermal stability resulting from thick T BOX , a thin N + -buried layer is introduced into collector region to not only improve the FOM of f T ×BV CEO , but also weaken the self-heating effect of the device, thus improving the thermal stability of the device. Furthermore, the effect of the location of the thin N + -buried layer in collector region is investigated in detail. The result show that the FOM of f T ×BV CEO is improved and the device temperature decreases as the N + -buried layer shifts toward SOI substrate insulation layer

  3. A High Voltage Swing 1.9 GHz PA in Standard CMOS

    NARCIS (Netherlands)

    Aartsen, W.A.J.; Annema, Anne J.; Nauta, Bram

    2002-01-01

    A circuit technique for RF power amplifiers that reliably handle voltage peaks well above the nominal supply voltage is presented. To achieve this high-voltage tolerance the circuit implements switched-cascode transistors that yield reliable operation for voltages up to 7V at RF frequencies in a

  4. Enhanced Local Grid Voltage Support Method for High Penetration of Distributed Generators

    DEFF Research Database (Denmark)

    Demirok, Erhan; Sera, Dezso; Rodriguez, Pedro

    2011-01-01

    Grid voltage rise and thermal loading of network components are the most remarkable barriers to allow high number of distributed generator (DG) connections on the medium voltage (MV) and low voltage (LV) electricity networks. The other barriers such as grid power quality (harmonics, voltage...

  5. Piezoelectric self sensing actuators for high voltage excitation

    International Nuclear Information System (INIS)

    Grasso, E; Totaro, N; Janocha, H; Naso, D

    2013-01-01

    Self sensing techniques allow the use of a piezoelectric transducer simultaneously as an actuator and as a sensor. Such techniques are based on knowledge of the transducer behaviour and on measurements of electrical quantities, in particular voltage and charge. Past research work has mainly considered the linear behaviour of piezoelectric transducers, consequently restricting the operating driving voltages to low values. In this work a new self sensing technique is proposed which is able to perform self sensing reconstruction both at low and at high driving voltages. This technique, in fact, makes use of a hysteretic model to describe the nonlinear piezoelectric capacitance necessary for self sensing reconstruction. The capacitance can be measured and identified at the antiresonances of a vibrating structure with a good approximation. After providing a mathematical background to deal with the main aspects of self sensing, this technique is compared theoretically and experimentally to a typical linear one by using an aluminum plate with one bonded self sensing transducer and a positive position feedback (PPF) controller to verify the performance in self sensing based vibration control. (paper)

  6. New perspectives in vacuum high voltage insulation. II. Gas desorption

    CERN Document Server

    Diamond, W T

    1998-01-01

    An examination has been made of gas desorption from unbaked electrodes of copper, niobium, aluminum, and titanium subjected to high voltage in vacuum. It has been shown that the gas is composed of water vapor, carbon monoxide, and carbon dioxide, the usual components of vacuum outgassing, plus an increased yield of hydrogen and light hydrocarbons. The gas desorption was driven by anode conditioning as the voltage was increased between the electrodes. The gas is often desorbed as microdischarges-pulses of a few to hundreds of microseconds-and less frequently in a more continuous manner without the obvious pulsed structure characteristic of microdischarge activity. The quantity of gas released was equivalent to many monolayers and consisted mostly of neutral molecules with an ionic component of a few percent. A very significant observation was that the gas desorption was more dependent on the total voltage between the electrodes than on the electric field. It was not triggered by field-emitted electrons but oft...

  7. Temperature and Voltage Offsets in High-ZT Thermoelectrics

    Science.gov (United States)

    Levy, George S.

    2017-10-01

    Thermodynamic temperature can take on different meanings. Kinetic temperature is an expectation value and a function of the kinetic energy distribution. Statistical temperature is a parameter of the distribution. Kinetic temperature and statistical temperature, identical in Maxwell-Boltzmann statistics, can differ in other statistics such as those of Fermi-Dirac or Bose-Einstein when a field is present. Thermal equilibrium corresponds to zero statistical temperature gradient, not zero kinetic temperature gradient. Since heat carriers in thermoelectrics are fermions, the difference between these two temperatures may explain voltage and temperature offsets observed during meticulous Seebeck measurements in which the temperature-voltage curve does not go through the origin. In conventional semiconductors, temperature offsets produced by fermionic electrical carriers are not observable because they are shorted by heat phonons in the lattice. In high-ZT materials, however, these offsets have been detected but attributed to faulty laboratory procedures. Additional supporting evidence for spontaneous voltages and temperature gradients includes data collected in epistatic experiments and in the plasma Q-machine. Device fabrication guidelines for testing the hypothesis are suggested including using unipolar junctions stacked in a superlattice, alternating n/n + and p/p + junctions, selecting appropriate dimensions, doping, and loading.

  8. Temperature and Voltage Offsets in High- ZT Thermoelectrics

    Science.gov (United States)

    Levy, George S.

    2018-06-01

    Thermodynamic temperature can take on different meanings. Kinetic temperature is an expectation value and a function of the kinetic energy distribution. Statistical temperature is a parameter of the distribution. Kinetic temperature and statistical temperature, identical in Maxwell-Boltzmann statistics, can differ in other statistics such as those of Fermi-Dirac or Bose-Einstein when a field is present. Thermal equilibrium corresponds to zero statistical temperature gradient, not zero kinetic temperature gradient. Since heat carriers in thermoelectrics are fermions, the difference between these two temperatures may explain voltage and temperature offsets observed during meticulous Seebeck measurements in which the temperature-voltage curve does not go through the origin. In conventional semiconductors, temperature offsets produced by fermionic electrical carriers are not observable because they are shorted by heat phonons in the lattice. In high- ZT materials, however, these offsets have been detected but attributed to faulty laboratory procedures. Additional supporting evidence for spontaneous voltages and temperature gradients includes data collected in epistatic experiments and in the plasma Q-machine. Device fabrication guidelines for testing the hypothesis are suggested including using unipolar junctions stacked in a superlattice, alternating n/ n + and p/ p + junctions, selecting appropriate dimensions, doping, and loading.

  9. DOE Task Force meeting on Electrical Breakdown of Insulating Ceramics in a High Radiation Field

    International Nuclear Information System (INIS)

    Green, P.H.

    1991-08-01

    This volume contains the abstracts and presentation material from the Research Assistance Task Force Meeting ''Electrical Breakdown of Insulating Ceramics in a High-Radiation Field.'' The meeting was jointly sponsored by the Office of Basic Energy Sciences and the Office of Fusion Energy of the US Department of Energy in Vail, Colorado, May 28--June 1, 1991. The 26 participants represented expertise in fusion, radiation damage, electrical breakdown, ceramics, and semiconductor and electronic structures. These participants came from universities, industries, national laboratories, and government. The attendees represented eight nations. The Task Force meeting was organized in response to the recent discovery that a combination of temperature, electric field, and radiation for an extended period of time has an unexplained adverse effect in ceramics, termed radiation-enhanced electrical degradation (REED). REED occurs after an incubation period and continues to accelerate with irradiation until the ceramics can no longer be regarded as insulators. It appears that REED is irreversible and the ceramic insulators cannot be readily annealed or otherwise repaired for future services. This effect poses a serious threat for fusion reactors, which require electrical insulators in diagnostic devices, in radio frequency and neutral beam systems, and in magnetic assemblies. The problem of selecting suitable electrical insulating materials in thus far more serious than previously anticipated

  10. Design and development of high voltage and high frequency center tapped transformer for HVDC test generator

    International Nuclear Information System (INIS)

    Thaker, Urmil; Saurabh Kumar; Amal, S.; Baruah, U.K.; Bhatt, Animesh

    2015-01-01

    A High Voltage center tapped transformer for high frequency application had been designed, fabricated, and tested. It was designed as a part of 200 kV HVDC Test Generator. The High Frequency operation of transformer increases power density. Therefore it is possible to reduce power supply volume. The step up ratio in High Voltage transformer is limited due to stray capacitance and leakage inductance. The limit was overcome by winding multi secondary outputs. Switching frequency of transformer was 15.8 kHz. Input and output voltages of transformer were 270V and 16.5kV-0V-16.5kV respectively. Power rating of transformer is 7kVA. High Voltage transformer with various winding and core arrangement was fabricated to check variation in electrical characteristics. The transformer used a ferrite core (E Type) and nylon insulated primary and secondary bobbins. Two set of E-E geometry cores had been stacked in order to achieve the estimated core volume. Compared with traditional high voltage transformer, this transformer had good thermal behavior, good line insulation properties and a high power density. In this poster, design procedures, development stages and test results of high voltage and high frequency transformer are presented. Results of various parameters such as transformer loss, temperature rise, insulation properties, impedance of primary and secondary winding, and voltage regulation are discussed. (author)

  11. Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

    CERN Document Server

    Krieger, A.; Catherall, R.; Hochschulz, F.; Kramer, J.; Neugart, R.; Rosendahl, S.; Schipper, J.; Siesling, E.; Weinheimer, Ch.; Yordanov, D.T.; Nortershauser, W.

    2011-01-01

    A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the highvoltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequencycomb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

  12. DEMONSTRATION BULLETIN: HIGH VOLTAGE ELECTRON BEAM TECHNOLOGY - HIGH VOLTAGE ENVIRONMENTAL APPLICATIONS, INC.

    Science.gov (United States)

    The high energy electron beam irradiation technology is a low temperature method for destroying complex mixtures of hazardous organic chemicals in solutions containing solids. The system consists of a computer-automated, portable electron beam accelerator and a delivery system. T...

  13. An inverted-geometry, high voltage polarized electron gun with UHV load lock

    International Nuclear Information System (INIS)

    Breidenbach, M.; Foss, M.; Hodgson, J.; Kulikov, A.; Odian, A.; Putallaz, G.; Rogers, H.; Schindler, R.; Skarpaas, K.; Zolotorev, M.

    1994-01-01

    The design of a high voltage electron source with a GaAs photocathode and a load lock system is described. The inverted high voltage structure of the gun permits a compact and simple design. Test results demonstrate that the load lock system provides a reliable way to achieve high quantum efficiency of the photocathode in a high voltage device. ((orig.))

  14. High-Voltage Power Supply System for Laser Isotope Separation

    Energy Technology Data Exchange (ETDEWEB)

    Ketaily, E.C.; Buckner, R.P.; Uhrik, R.L.

    1979-06-26

    This report presents several concepts for Laser High-Voltage Power Supply (HVPS) Systems for a Laser Isotope Separation facility. Selection of equipments and their arrangement into operational systems is based on proven designs and on application concepts now being developed. This report has identified a number of alternative system arrangements and has provided preliminary cost estimates for each. The report includes a recommendation for follow-on studies that will further define the optimum Laser HVPS Systems. Brief descriptions are given of Modulator/Regulator circuit trade-offs, system control interfaces, and their impact on costs.

  15. High-Voltage Power Supply System for Laser Isotope Separation

    International Nuclear Information System (INIS)

    Ketaily, E.C.; Buckner, R.P.; Uhrik, R.L.

    1979-01-01

    This report presents several concepts for Laser High-Voltage Power Supply (HVPS) Systems for a Laser Isotope Separation facility. Selection of equipments and their arrangement into operational systems is based on proven designs and on application concepts now being developed. This report has identified a number of alternative system arrangements and has provided preliminary cost estimates for each. The report includes a recommendation for follow-on studies that will further define the optimum Laser HVPS Systems. Brief descriptions are given of Modulator/Regulator circuit trade-offs, system control interfaces, and their impact on costs

  16. Electron beam generation in high voltage glow discharges

    International Nuclear Information System (INIS)

    Rocca, J.J.; Szapiro, B.; Murray, C.

    1989-01-01

    The generation of intense CW and pulsed electron beams in glow discharges in reviewed. Glow discharge electron guns operate at a pressure of the order of 1 Torr and often have an advantage in applications that require a broad area electron beam in a gaseous atmosphere, such as laser excitation and some aspects of materials processing. Aspects of electron gun design are covered. Diagnostics of the high voltage glow discharges including the electric field distribution mapped by Doppler free laser spectroscopy, and plasma density and electron temperature measurements of the electron yield of different cathode materials under glow discharge conditions are presented

  17. High voltage transmission lines - what are the hazards

    International Nuclear Information System (INIS)

    Repacholi, M.H.

    1985-01-01

    With the increasing use of high voltage alternating current (HVAC) transmission lines there is a growing concern among the public about possible human health effects resulting from exposure to the electric fields associated with these lines. While there is no definitive evidence of such effects, mounting public fear and activism over hypothesized health risks is already causing delays in the licensing and constuction of major power transmission facilities, and is encouraging the formation of regulatory policy. This paper briefly reviews the concerns, biological effects data and standards for HVAC transmission lines

  18. High Voltage Bi-directional Flyback Converter for Capacitive Actuator

    DEFF Research Database (Denmark)

    Thummala, Prasanth; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    in the converter, including the most dominating parameters of the high voltage transformer viz., self-capacitance and leakage inductance. The specific capacitive load for this converter is a dielectric electro active polymer (DEAP) actuator, which can be used as an effective replacement for conventional actuators...... in a number of applications. In this paper, the discharging energy efficiency definition is introduced. The proposed converter has been experimentally tested with the film capacitive load and the DEAP actuator, and the experimental results are shown together with the efficiency measurements....

  19. Design philosophy and use of high voltage power systems for multi-megawatt ion beam accelerators

    International Nuclear Information System (INIS)

    Barber, G.C.; Broverman, A.Y.; Hill, R.E.; Loring, C.M.; Ponte, N.S.

    1977-01-01

    The requirements for a neutral beam high voltage power system are derived from the characteristics of the ion source. High voltage system component characteristic requirements and choices are described

  20. Calibration of the ISOLDE acceleration voltage using a high-precision voltage divider and applying collinear fast beam laser spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Krieger, A., E-mail: kriegea@uni-mainz.d [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Geppert, Ch. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany); Catherall, R. [CERN, CH-1211 Geneve 23 (Switzerland); Hochschulz, F. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Kraemer, J.; Neugart, R. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); Rosendahl, S. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Schipper, J.; Siesling, E. [CERN, CH-1211 Geneve 23 (Switzerland); Weinheimer, Ch. [Institut fuer Kernphysik, Universitaet Muenster, 48149 Muenster (Germany); Yordanov, D.T. [Max-Planck-Institut fuer Kernphysik, 69117 Heidelberg (Germany); Noertershaeuser, W. [Institut fuer Kernchemie, Johannes Gutenberg, Universitaet Mainz, Fritz-Strassmann-Weg 2, 55128 Mainz (Germany); GSI Helmholtzzentrum fuer Schwerionenforschung, 64291 Darmstadt (Germany)

    2011-03-11

    A high-voltage divider with accuracy at the ppm level and collinear laser spectroscopy were used to calibrate the high-voltage installation at the radioactive ion beam facility ISOLDE at CERN. The accurate knowledge of this voltage is particularly important for collinear laser spectroscopy measurements. Beam velocity measurements using frequency-comb based collinear laser spectroscopy agree with the new calibration. Applying this, one obtains consistent results for isotope shifts of stable magnesium isotopes measured using collinear spectroscopy and laser spectroscopy on laser-cooled ions in a trap. The long-term stability and the transient behavior during recovery from a voltage dropout were investigated for the different power supplies currently applied at ISOLDE.

  1. 30 CFR 77.704-1 - Work on high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 77.704-1 Section 77... MINES Grounding § 77.704-1 Work on high-voltage lines. (a) No high-voltage line shall be regarded as... provided in § 77.103) that such high-voltage line has been deenergized and grounded. Such qualified person...

  2. Novel Interleaved Converter with Extra-High Voltage Gain to Process Low-Voltage Renewable-Energy Generation

    Directory of Open Access Journals (Sweden)

    Chih-Lung Shen

    2016-10-01

    Full Text Available This paper presents a novel interleaved converter (NIC with extra-high voltage gain to process the power of low-voltage renewable-energy generators such as photovoltaic (PV panel, wind turbine, and fuel cells. The NIC can boost a low input voltage to a much higher voltage level to inject renewable energy to DC bus for grid applications. Since the NIC has two circuit branches in parallel at frond end to share input current, it is suitable for high power applications. In addition, the NIC is controlled in an interleaving pattern, which has the advantages that the NIC has lower input current ripple, and the frequency of the ripple is twice the switching frequency. Two coupled inductors and two switched capacitors are incorporated to achieve a much higher voltage gain than conventional high step-up converters. The proposed NIC has intrinsic features such as leakage energy totally recycling and low voltage stress on power semiconductor. Thorough theoretical analysis and key parameter design are presented in this paper. A prototype is built for practical measurements to validate the proposed NIC.

  3. A low-ripple chargepump circuit for high voltage applications

    NARCIS (Netherlands)

    Berkhout, M.; Berkhout, M.; van Steenwijk, G.; van Steenwijk, Gijs; van Tuijl, Adrianus Johannes Maria

    1995-01-01

    The subject of this paper is a fully integrated chargepump circuit with a very low output voltage ripple. At a supply voltage of 30V the chargepump can source 1mA at an output voltage of 40V. Two simple modifications to the classical chargepump circuit give a substantial reduction of the output

  4. A high voltage ratio and low ripple interleaved DC-DC converter for fuel cell applications.

    Science.gov (United States)

    Chang, Long-Yi; Chao, Kuei-Hsiang; Chang, Tsang-Chih

    2012-01-01

    This paper proposes a high voltage ratio and low ripple interleaved boost DC-DC converter, which can be used to reduce the output voltage ripple. This converter transfers the low DC voltage of fuel cell to high DC voltage in DC link. The structure of the converter is parallel with two voltage-doubler boost converters by interleaving their output voltages to reduce the voltage ripple ratio. Besides, it can lower the current stress for the switches and inductors in the system. First, the PSIM software was used to establish a proton exchange membrane fuel cell and a converter circuit model. The simulated and measured results of the fuel cell output characteristic curve are made to verify the correctness of the established simulation model. In addition, some experimental results are made to validate the effectiveness in improving output voltage ripple of the proposed high voltage ratio interleaved boost DC-DC converters.

  5. High-voltage isolation transformer for sub-nanosecond rise time pulses constructed with annular parallel-strip transmission lines.

    Science.gov (United States)

    Homma, Akira

    2011-07-01

    A novel annular parallel-strip transmission line was devised to construct high-voltage high-speed pulse isolation transformers. The transmission lines can easily realize stable high-voltage operation and good impedance matching between primary and secondary circuits. The time constant for the step response of the transformer was calculated by introducing a simple low-frequency equivalent circuit model. Results show that the relation between the time constant and low-cut-off frequency of the transformer conforms to the theory of the general first-order linear time-invariant system. Results also show that the test transformer composed of the new transmission lines can transmit about 600 ps rise time pulses across the dc potential difference of more than 150 kV with insertion loss of -2.5 dB. The measured effective time constant of 12 ns agreed exactly with the theoretically predicted value. For practical applications involving the delivery of synchronized trigger signals to a dc high-voltage electron gun station, the transformer described in this paper exhibited advantages over methods using fiber optic cables for the signal transfer system. This transformer has no jitter or breakdown problems that invariably occur in active circuit components.

  6. 30 CFR 75.812-2 - High-voltage power centers and transformers; record of examination.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage power centers and transformers; record of examination. 75.812-2 Section 75.812-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... High-Voltage Distribution § 75.812-2 High-voltage power centers and transformers; record of examination...

  7. 21 CFR 892.1700 - Diagnostic x-ray high voltage generator.

    Science.gov (United States)

    2010-04-01

    ... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Diagnostic x-ray high voltage generator. 892.1700... (CONTINUED) MEDICAL DEVICES RADIOLOGY DEVICES Diagnostic Devices § 892.1700 Diagnostic x-ray high voltage generator. (a) Identification. A diagnostic x-ray high voltage generator is a device that is intended to...

  8. 30 CFR 75.705-1 - Work on high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Work on high-voltage lines. 75.705-1 Section 75... AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Grounding § 75.705-1 Work on high-voltage lines. (a) Section 75.705 specifically prohibits work on energized high-voltage lines underground; (b...

  9. 30 CFR 77.807-3 - Movement of equipment; minimum distance from high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... high-voltage lines. 77.807-3 Section 77.807-3 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-3 Movement of equipment; minimum distance from high-voltage lines. When any part of any equipment operated on the surface of any...

  10. Spectrographic temperature measurement of a high power breakdown arc in a high pressure gas switch

    Energy Technology Data Exchange (ETDEWEB)

    Yeckel, Christopher; Curry, Randy [Department of Computer and Electrical Engineering, Center for Physical and Power Electronics, University of Missouri--Columbia, Columbia, Missouri 65211 (United States)

    2011-09-15

    A procedure for obtaining an approximate temperature value of conducting plasma generated during self-break closure of a RIMFIRE gas switch is described. The plasma is in the form of a breakdown arc which conducts approximately 12 kJ of energy in 1 {mu}s. A spectrographic analysis of the trigger-section of the 6-MV RIMFIRE laser triggered gas switch used in Sandia National Laboratory's ''Z-Machine'' has been made. It is assumed that the breakdown plasma has sufficiently approached local thermodynamic equilibrium allowing a black-body temperature model to be applied. This model allows the plasma temperature and radiated power to be approximated. The gas dielectric used in these tests was pressurized SF{sub 6}. The electrode gap is set at 4.59 cm for each test. The electrode material is stainless steel and insulator material is poly(methyl methacrylate). A spectrum range from 220 to 550 nanometers has been observed and calibrated using two spectral irradiance lamps and three spectrograph gratings. The approximate plasma temperature is reported.

  11. Hardware and software system for monitoring oil pump operation in power high-voltage transformers

    Directory of Open Access Journals (Sweden)

    Михайло Дмитрович Дяченко

    2017-07-01

    Full Text Available The article considers the basic prerequisites for the creation of an automated monitoring system for oil pumps of high-voltage transformers. This is due to the fact that the long operation of oil pumps results in deterioration and destruction of bearings, rubbing of the rotor, breakage and damage to the impeller, leakage, etc., which inevitably causes a significant decrease in the insulating properties of the transformer oil and leads to expenditures for its further recovery. False triggerings of gas protection sometimes occur. Continuous operation of the electric motor also requires additional equipment to protect the motor itself from various emergency situations, such as a short in the stator winding, a housing breakdown, an incomplete phase mode, etc. The use of stationary systems provides: diagnosing defects at an early stage of their development, increasing the reliability and longevity of the equipment components, increasing the overhaul period, decreasing the number of emergency stops, and adjusting the schedule of preventative maintenance. The basic principles of identification of the damaged part of the oil pump are given, the hardware and algorithmic solutions are considered in the work. The full-scale tests of the model sample on the power transformer of the high-voltage substation confirmed the assumption of the possibility of detecting the damaged unit separating it from the rest connected in one mechanical structure. A detailed analysis of the operation of each of the units is carried out by means of the general substation switchboard and displayed as graphs, diagrams and text messages. When the limit values of vibration are reached, faults in the operation of the unit are detected, the overlimit current values, a warning alarm is activated, and the command to disconnect the damaged unit is issued. The optimal solution for the organization of the information collection system using the principle of sensor networks, but combined

  12. Twenty-channel high-voltage pulse generators

    International Nuclear Information System (INIS)

    Anan'in, P.S.; Kashirin, A.P.

    1980-01-01

    A 20-channel high-voltage pulse generator operating with a mismatched load is described. The generator contains shaping lines 20 m long made of coaxial cable, a trigatron-type discharged, and isolating plates. The channel characteristic impedance is 50 Ohm. The maximum pulse amplitude is up to 15 kV on a high-resistance load and 7.5 kV on a matched one. The pulse duration is 100 ns at a pulse rise time of 12 ns, the delay introduced by the generator is 200 +-2.5 ns. Provision is made in the control circuit for compensation of the shaped pulse and separation of a pulse reflected from the load. The reflected pulse shape and amplitude characterize load parameters. Generator tests proved its high operational reliability (after 10 5 operations no significant changes in generator performances have been observed). The generator is intended for filmless data output from spark chambers

  13. Integration Test of the High Voltage Hall Accelerator System Components

    Science.gov (United States)

    Kamhawi, Hani; Haag, Thomas; Huang, Wensheng; Pinero, Luis; Peterson, Todd; Dankanich, John

    2013-01-01

    NASA Glenn Research Center is developing a 4 kilowatt-class Hall propulsion system for implementation in NASA science missions. NASA science mission performance analysis was completed using the latest high voltage Hall accelerator (HiVHAc) and Aerojet-Rocketdyne's state-of-the-art BPT-4000 Hall thruster performance curves. Mission analysis results indicated that the HiVHAc thruster out performs the BPT-4000 thruster for all but one of the missions studied. Tests of the HiVHAc system major components were performed. Performance evaluation of the HiVHAc thruster at NASA Glenn's vacuum facility 5 indicated that thruster performance was lower than performance levels attained during tests in vacuum facility 12 due to the lower background pressures attained during vacuum facility 5 tests when compared to vacuum facility 12. Voltage-Current characterization of the HiVHAc thruster in vacuum facility 5 showed that the HiVHAc thruster can operate stably for a wide range of anode flow rates for discharge voltages between 250 and 600 volts. A Colorado Power Electronics enhanced brassboard power processing unit was tested in vacuum for 1,500 hours and the unit demonstrated discharge module efficiency of 96.3% at 3.9 kilowatts and 650 volts. Stand-alone open and closed loop tests of a VACCO TRL 6 xenon flow control module were also performed. An integrated test of the HiVHAc thruster, brassboard power processing unit, and xenon flow control module was performed and confirmed that integrated operation of the HiVHAc system major components. Future plans include continuing the maturation of the HiVHAc system major components and the performance of a single-string integration test.

  14. Compact high voltage, high peak power, high frequency transformer for converter type modulator applications.

    Science.gov (United States)

    Reghu, T; Mandloi, V; Shrivastava, Purushottam

    2016-04-01

    The design and development of a compact high voltage, high peak power, high frequency transformer for a converter type modulator of klystron amplifiers is presented. The transformer has been designed to operate at a frequency of 20 kHz and at a flux swing of ±0.6 T. Iron (Fe) based nanocrystalline material has been selected as a core for the construction of the transformer. The transformer employs a specially designed solid Teflon bobbin having 120 kV insulation for winding the high voltage secondary windings. The flux swing of the core has been experimentally found by plotting the hysteresis loop at actual operating conditions. Based on the design, a prototype transformer has been built which is per se a unique combination of high voltage, high frequency, and peak power specifications. The transformer was able to provide 58 kV (pk-pk) at the secondary with a peak power handling capability of 700 kVA. The transformation ratio was 1:17. The performance of the transformer is also presented and discussed.

  15. 30 CFR 77.704-2 - Repairs to energized high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Repairs to energized high-voltage lines. 77.704... UNDERGROUND COAL MINES Grounding § 77.704-2 Repairs to energized high-voltage lines. An energized high-voltage... repairs will be performed on power circuits with a phase-to-phase nominal voltage no greater than 15,000...

  16. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Marzocchi, Badder

    2017-01-01

    The CMS Electromagnetic Calorimeter is made of scintillating lead tungstate crystals, using avalanche photodiodes (APD) as photo-detectors in the barrel part. The high voltage system, consisting of 1224 channels, biases groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  17. High-voltage high-current triggering vacuum switch

    International Nuclear Information System (INIS)

    Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

    2012-01-01

    Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

  18. Design and development of high voltage high power operational ...

    Indian Academy of Sciences (India)

    address this challenge, a) Designing a discrete power opamp with high .... the use of high-impedance feedback networks, thus minimizing their output loading ... Spice simulation is done for the circuit and results are given in figures 4a–c.

  19. High Bandwidth Zero Voltage Injection Method for Sensorless Control of PMSM

    DEFF Research Database (Denmark)

    Ge, Xie; Lu, Kaiyuan; Kumar, Dwivedi Sanjeet

    2014-01-01

    High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses to be inj......High frequency signal injection is widely used in PMSM sensorless control system for low speed operations. The conventional voltage injection method often needs filters to obtain particular harmonic component in order to estimate the rotor position; or it requires several voltage pulses...... in a fast current regulation performance. Injection of zero voltage also minimizes the inverter voltage error effects caused by the dead-time....

  20. Effect of electric field in the characterization of pultruded GFRP boron-free composite insulator for the extra high voltage by the ionizing radiation

    Energy Technology Data Exchange (ETDEWEB)

    Fujiwara, Hissae; Silva Junior, Edmilson Jose; Shinohara, Armando Hideki [Universidade Federal de Pernambuco (UFPE), Recife, PE (Brazil); Xavier, Gustavo Jose Vasconcelos [CHESF, Recife, PE (Brazil); Costa, Edson Guedes [Universidade Federal de Campina Grande (UFCG), PB (Brazil); Lott Neto, Henrique Batista Duffles Teixeira; Britto, Paulo Roberto Ranzan; Fontan, Marcio A.B. [Sistema de Transmissao do Nordeste S.A., Recife, PE (Brazil)

    2016-07-01

    Full text: The pultruded boron-free glass fiber reinforced polymer (GFRP) composite has been widely used material for the electrical insulators in the high, extra and ultra high voltage overhead lines worldwide. In terms of design, the composite insulator has a highly complex geometry and large size. Aging of materials begin as soon as the insulators start their operation due to the strong electric field, mechanical load due to the weight of conductor cables, environment, corona discharge, generation of acids, and as a result, GFRP can fail mechanically by the stress corrosion crack (SCC) and electrical breakdown known as flashover. In order to mitigate the mechanical and electrical failures, the insulators in the field are frequently monitored by visual inspection, infrared thermography, UV detection, variation of measurement of distribution of electric field variation. However, new technologies for characterization and inspection of the composite insulator in the field are required for reliable operation. Imaging characterization using ionizing radiation (X-ray or g-ray) is an interesting technique, however, it can reduce drastically breakdown voltage due to the Townsend discharge, which free electrons are accelerated by an electric field, collide with gas molecules of air, and free additional electrons resulting in an avalanche multiplication that allows an electrical conduction through the air. In this study, in order to evaluate the potential application of ionization radiation for characterization of composite insulator under electric field, testing were conducted in high voltage laboratory by applying voltages up to 640 kV and varying radiation area of the composite insulator. As a result, even though there was an occurrence of flame on Imaging Plate (IP) detector case when it was located near the phase, corona discharge, but no breakdown discharge (flashover) occurred and high quality imaging of radiography could be obtained when X-ray source was employed

  1. High improvement in trap level density and direct current breakdown strength of block polypropylene by doping with a β-nucleating agent

    Science.gov (United States)

    Zhang, Chong; Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

    2018-02-01

    Polypropylene is one kind of eco-friendly insulating material, which has attracted more attention for use in high voltage direct current (HVDC) insulation due to the long-distance transmission, low loss, and recyclability. In this work, the morphology and thermal and electrical properties of the block polypropylene with various β-nucleating agent (β-NA) contents were investigated. The relative fraction of the β-crystal can reach 64.7% after adding 0.05 wt. % β-NA. The β-NA also greatly reduced the melting point and improved the crystallization temperature. The electrical property results showed that the alternating and direct current breakdown strength and conduction current were obviously improved. In addition, space charge accumulation was significantly suppressed by introducing the β-NA. This work provides an attractive strategy of design and fabrication of polypropylene for HVDC application.

  2. Abnormal breakdown characteristic in a two-phase mixture

    Energy Technology Data Exchange (ETDEWEB)

    Ye Qizheng; Li Jin; Lu Fei [College of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan, 430074 (China)

    2006-05-21

    A two-phase mixture (TPM) is a mixture of gas and macroparticles of high concentration. Based on Townsend's theory, a new cell-iterative model in analytical form for the breakdown mechanism in TPM is presented. Compared with the original cell-iterative model in our previous paper, the obstructive factor of the macroparticles that influences the electron avalanche propagation is considered, except for the macroparticles distorting the electrical field and capture of the electrons. The cell attractive parameter k is presented according to the classical continuum theory for field charging. The modified Paschen law for a TPM is presented to calculate the breakdown voltage. The breakdown voltage of the TPM, U{sub TPM}, increases gradually with an increase in the macroparticle number density (m). The voltage U{sub TPM} is lower than that of the pure gas at low m values and larger at high m values. With a decrease of the macroparticle volume fraction and the dielectric mismatch, the voltage U{sub TPM} increases gradually at low m values and decreases gradually at high m values. The voltage U{sub TPM} at pd 200 cm Torr is lower than that at pd = 760 cm Torr for low m values and larger for high m values. This kind of abnormal breakdown characteristic in the TPM occurs in the case of high macroparticle volume fraction. On the other hand, the minimum of the TPM's Paschen curve increases with increase in m. It provides the possibility and the conditions of greatly increasing the breakdown voltage in a nearly uniform field.

  3. High Voltage Dielectrophoretic and Magnetophoretic Hybrid Integrated Circuit / Microfluidic Chip

    Science.gov (United States)

    Issadore, David; Franke, Thomas; Brown, Keith A.; Hunt, Thomas P.; Westervelt, Robert M.

    2010-01-01

    A hybrid integrated circuit (IC) / microfluidic chip is presented that independently and simultaneously traps and moves microscopic objects suspended in fluid using both electric and magnetic fields. This hybrid chip controls the location of dielectric objects, such as living cells and drops of fluid, on a 60 × 61 array of pixels that are 30 × 38 μm2 in size, each of which can be individually addressed with a 50 V peak-to-peak, DC to 10 MHz radio frequency voltage. These high voltage pixels produce electric fields above the chip’s surface with a magnitude , resulting in strong dielectrophoresis (DEP) forces . Underneath the array of DEP pixels there is a magnetic matrix that consists of two perpendicular sets of 60 metal wires running across the chip. Each wire can be sourced with 120 mA to trap and move magnetically susceptible objects using magnetophoresis (MP). The DEP pixel array and magnetic matrix can be used simultaneously to apply forces to microscopic objects, such as living cells or lipid vesicles, that are tagged with magnetic nanoparticles. The capabilities of the hybrid IC / microfluidic chip demonstrated in this paper provide important building blocks for a platform for biological and chemical applications. PMID:20625468

  4. A model of electric breakdown in polycrystalline semiconductors with highly nonlinear I - V characteristics

    International Nuclear Information System (INIS)

    Yildirim, E.H.; Tanatar, B.; Canessa, E.

    1993-07-01

    A deterministic algorithm to study the nonlinear current-voltage characteristics of polycrystalline semiconductors, such as ZnO-based metal oxide varistors, under dc bias and at room temperature is developed based on the electrical properties of individual grain boundaries. Assuming a thermionic emission type mechanism between individual grains and a nonuniform distribution of barrier heights at grain boundaries, the set of nonlinear Kirchhoff equations that determines the macroscopic current across the specimen and the nonlinearity coefficient α is solved numerically. The applied voltage dependence of the barrier height is found to be crucial to obtain α values reaching ∼50, indicating high nonlinearity as required by potential commercial applications. (author). 20 refs, 3 figs

  5. High-voltage scanning ion microscope: Beam optics and design

    Energy Technology Data Exchange (ETDEWEB)

    Magilin, D., E-mail: dmitrymagilin@gmail.com; Ponomarev, A.; Rebrov, V.; Ponomarov, A.

    2015-05-01

    This article is devoted to the conceptual design of a compact high-voltage scanning ion microscope (HVSIM). In an HVSIM design, the ion optical system is based on a high-brightness ion source. Specifically, the ion optical system is divided into two components: an ion injector and a probe-forming system (PFS) that consists of an accelerating tube and a multiplet of quadrupole lenses. The crossover is formed and controlled by the injector, which acts as an object collimator, and is focused on the image plane by the PFS. The ion microprobe has a size of 0.1 μm and an energy of 2 MeV. When the influence of the chromatic and third-order aberrations is theoretically taken into account, the HVSIM forms an ion microprobe.

  6. DIII-D ICRF high voltage power supply regulator upgrade

    International Nuclear Information System (INIS)

    Cary, W.P.; Burley, B.L.; Grosnickle, W.H.

    1997-11-01

    For reliable operation and component protection, of the 2 MW 30--120 MHz ICRF Amplifier System on DIII-D, it is desirable for the amplifier to respond to high VSWR conditions as rapidly as possible. This requires a rapid change in power which also means a rapid change in the high voltage power supply current demands. An analysis of the power supply's regulator dynamics was needed to verify its expected operation during such conditions. Based on this information it was found that a new regulator with a larger dynamic range and some anticipation capability would be required. This paper will discuss the system requirements, the as-delivered regulator performance, and the improved performance after installation of the new regulator system. It will also be shown how this improvement has made the amplifier perform at higher power levels more reliably

  7. Criteria for vacuum breakdown in rf cavities

    International Nuclear Information System (INIS)

    Peter, W.; Faehl, R.J.; Kadish, A.; Thode, L.E.

    1983-01-01

    A new high-voltage scaling based on Kilpatrick's criterion is presented that suggests that voltages more than twice the Kilpatrick limit can be obtained with identical initial conditions of vacuum and surface cleanliness. The calculations are based on the experimentally observed decrease in secondary electron emission with increasing ion-impact energy above 100 keV. A generalized secondary-emission package has been developed to simulate actual cavity dynamics in conjunction with our 2 1/2-dimensional fully electromagnetic particle-in-cell code CEMIT. The results are discussed with application to the suppression of vacuum breakdown in rf accelerator devices

  8. Radiation effects on breakdown in silicon multiguarded diodes

    International Nuclear Information System (INIS)

    Bisello, D.; Da Rold, M.; Franzin, L.; Wheadon, R.

    1996-01-01

    The authors have investigated the current-voltage characteristics of silicon PIN diodes with a number of different multiguard structures. These structures were designed to increase the overall device breakdown voltage. The same measurements were carried out after gamma irradiation at different doses and neutron irradiation at fluences beyond type-inversion. This study is a first step towards defining guard structures optimized for operation in high-radiation environments such as those expected at the LHC

  9. 30 CFR 75.802 - Protection of high-voltage circuits extending underground.

    Science.gov (United States)

    2010-07-01

    ...-Voltage Distribution § 75.802 Protection of high-voltage circuits extending underground. (a) Except as... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits extending... which shall be grounded through a suitable resistor at the source transformers, and a grounding circuit...

  10. High voltage traction power supply; Ein- und Mehrspannungssysteme in der Bahnenergieversorgung mit hohen Spannungen

    Energy Technology Data Exchange (ETDEWEB)

    Borchard, Ludwig O. [Transnet freight rail, (Technology Management), Braamfontein (South Africa); Lehmann, Michael [Technische Univ. Dresden (Germany). Professur Elektrische Bahnen

    2009-04-15

    Raising the nominal voltage of electric railway systems implies many advantages, therefore several concepts can be presented and compared. Detailed studies on two systems with high contact line voltages were performed for the upgrade of the 1 AC 50 kV railway line in South Africa. Finally requirements for high voltage locomotives are derived and illustrated by examples. (orig.)

  11. On-load Tap Changer Diagnosis on High-Voltage Power Transformers using Dynamic Resistance Measurements

    NARCIS (Netherlands)

    Erbrink, J.J.

    2011-01-01

    High-voltage transformers have tap changers to regulate the voltage in the high-voltage network when the load changes. Those tap changers are subject to different degradation mechanisms and need regular maintenance. Various defects, like contact degradation, often remain undetected and the

  12. 30 CFR 75.811 - High-voltage underground equipment; grounding.

    Science.gov (United States)

    2010-07-01

    ...-voltage equipment supplying power to such equipment receiving power from resistance grounded systems shall... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage underground equipment; grounding... COAL MINE SAFETY AND HEALTH MANDATORY SAFETY STANDARDS-UNDERGROUND COAL MINES Underground High-Voltage...

  13. 30 CFR 56.12071 - Movement or operation of equipment near high-voltage power lines.

    Science.gov (United States)

    2010-07-01

    ...-voltage power lines. 56.12071 Section 56.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... NONMETAL MINES Electricity § 56.12071 Movement or operation of equipment near high-voltage power lines. When equipment must be moved or operated near energized high-voltage powerlines (other than trolley...

  14. 30 CFR 77.807-2 - Booms and masts; minimum distance from high-voltage lines.

    Science.gov (United States)

    2010-07-01

    ...-voltage lines. 77.807-2 Section 77.807-2 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION... WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.807-2 Booms and masts; minimum distance from high-voltage lines. The booms and masts of equipment operated on the surface of any...

  15. 30 CFR 57.12071 - Movement or operation of equipment near high-voltage powerlines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Movement or operation of equipment near high-voltage powerlines. 57.12071 Section 57.12071 Mineral Resources MINE SAFETY AND HEALTH ADMINISTRATION...-voltage powerlines. When equipment must be moved or operated near energized high-voltage powerlines (other...

  16. Experimental Study of Arcing on High-voltage Solar Arrays

    Science.gov (United States)

    Vayner, Boris; Galofaro, Joel; Ferguson, Dale

    2005-01-01

    The main obstacle to the implementation of a high-voltage solar array in space is arcing on the conductor-dielectric junctions exposed to the surrounding plasma. One obvious solution to this problem would be the installation of fully encapsulated solar arrays which were not having exposed conductors at all. However, there are many technological difficulties that must be overcome before the employment of fully encapsulated arrays will turn into reality. An alternative solution to raise arc threshold by modifications of conventionally designed solar arrays looks more appealing, at least in the nearest future. A comprehensive study of arc inception mechanism [1-4] suggests that such modifications can be done in the following directions: i) to insulate conductor-dielectric junction from a plasma environment (wrapthrough interconnects); ii) to change a coverglass geometry (overhang); iii) to increase a coverglass thickness; iiii) to outgas areas of conductor-dielectric junctions. The operation of high-voltage array in LEO produces also the parasitic current power drain on the electrical system. Moreover, the current collected from space plasma by solar arrays determines the spacecraft floating potential that is very important for the design of spacecraft and its scientific apparatus. In order to verify the validity of suggested modifications and to measure current collection five different solar array samples have been tested in large vacuum chamber. Each sample (36 silicon based cells) consists of three strings containing 12 cells connected in series. Thus, arc rate and current collection can be measured on every string independently, or on a whole sample when strings are connected in parallel. The heater installed in the chamber provides the possibility to test samples under temperature as high as 80 C that simulates the LEO operational temperature. The experimental setup is described below.

  17. High voltage distribution scheme for large size GEM detector

    International Nuclear Information System (INIS)

    Saini, J.; Kumar, A.; Dubey, A.K.; Negi, V.S.; Chattopadhyay, S.

    2016-01-01

    Gas Electron Multiplier (GEM) detectors will be used for Muon tracking in the Compressed Baryonic Matter (CBM) experiment at the Facility for Anti-proton Ion Research (FAIR) at Darmstadt, Germany. The sizes of the detector modules in the Muon chambers are of the order of 1 metre x 0.5 metre. For construction of these chambers, three GEM foils are used per chamber. These foils are made by two layered 50μm thin kapton foil. Each GEM foil has millions of holes on it. In such a large scale manufacturing of the foils, even after stringent quality controls, some of the holes may still have defects or defects might develop over the time with operating conditions. These defects may result in short-circuit of the entire GEM foil. A short even in a single hole will make entire foil un-usable. To reduce such occurrences, high voltage (HV) segmentation within the foils has been introduced. These segments are powered either by individual HV supply per segment or through an active HV distribution to manage such a large number of segments across the foil. Individual supplies apart from being costly, are highly complex to implement. Additionally, CBM will have high intensity of particles bombarding on the detector causing the change of resistive chain current feeding the GEM detector with the variation in the intensity. This leads to voltage fluctuations across the foil resulting in the gain variation with the particle intensity. Hence, a low cost active HV distribution is designed to take care of the above discussed issues

  18. Dielectric-wall linear accelerator with a high voltage fast rise time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators

    Science.gov (United States)

    Caporaso, George J.; Sampayan, Stephen E.; Kirbie, Hugh C.

    1998-01-01

    A dielectric-wall linear accelerator is improved by a high-voltage, fast rise-time switch that includes a pair of electrodes between which are laminated alternating layers of isolated conductors and insulators. A high voltage is placed between the electrodes sufficient to stress the voltage breakdown of the insulator on command. A light trigger, such as a laser, is focused along at least one line along the edge surface of the laminated alternating layers of isolated conductors and insulators extending between the electrodes. The laser is energized to initiate a surface breakdown by a fluence of photons, thus causing the electrical switch to close very promptly. Such insulators and lasers are incorporated in a dielectric wall linear accelerator with Blumlein modules, and phasing is controlled by adjusting the length of fiber optic cables that carry the laser light to the insulator surface.

  19. Voltage spike detection in high field superconducting accelerator magnets

    Energy Technology Data Exchange (ETDEWEB)

    Orris, D.F.; Carcagno, R.; Feher, S.; Makulski, A.; Pischalnikov, Y.M.; /Fermilab

    2004-12-01

    A measurement system for the detection of small magnetic flux changes in superconducting magnets, which are due to either mechanical motion of the conductor or flux jump, has been developed at Fermilab. These flux changes are detected as small amplitude, short duration voltage spikes, which are {approx}15mV in magnitude and lasts for {approx}30 {micro}sec. The detection system combines an analog circuit for the signal conditioning of two coil segments and a fast data acquisition system for digitizing the results, performing threshold detection, and storing the resultant data. The design of the spike detection system along with the modeling results and noise analysis will be presented. Data from tests of high field Nb{sub 3}Sn magnets at currents up to {approx}20KA will also be shown.

  20. Voltage spike detection in high field superconducting accelerator magnets

    International Nuclear Information System (INIS)

    Orris, D.F.; Carcagno, R.; Feher, S.; Makulski, A.; Pischalnikov, Y.M.

    2004-01-01

    A measurement system for the detection of small magnetic flux changes in superconducting magnets, which are due to either mechanical motion of the conductor or flux jump, has been developed at Fermilab. These flux changes are detected as small amplitude, short duration voltage spikes, which are ∼15mV in magnitude and lasts for ∼30(micro)sec. The detection system combines an analog circuit for the signal conditioning of two coil segments and a fast data acquisition system for digitizing the results, performing threshold detection, and storing the resultant data. The design of the spike detection system along with the modeling results and noise analysis will be presented. Data from tests of high field Nb3Sn magnets at currents up to ∼20KA will also be shown

  1. Local high voltage radiotherapy with curative intent for prostatic carcinoma

    International Nuclear Information System (INIS)

    Jacobi, G.H.; Kurth, K.H.; Hohenfellner, R.

    1979-01-01

    In a 10-year interval 179 patients with prostatic carcinoma were treated by cobalt-60 teletherapy (7600 R). A selected group of 47 patients with localized disease and irradiated with curative intent had serial prostatic biopsies and were analized after a minimum follow-up of 1 year. Biopsies of half of the patients rendered definitively negative, on an average 14 months after radiotherapy. 8 patients with initial negative biopsy changed to positive secondarily. In one third of the patients histological conversion was missed, considered as radiation persister. Persistent carcinoma were of predominant low grade. 5 patients developed distant metastases 30 months after irradiation on an average. These patients had persistent positive tissue studies. Over all cumulative 5-years survival was 89%. In patients with prostatic carcinoma and local high voltage radiotherapy with curative intent (stage A through C) serial prostatic biopsies to document therapy effect seen mandatory. (orig.) 891 AJ/orig. 892 BRE [de

  2. High Voltage Installation of PS Linac 1 Preinjector

    CERN Multimedia

    CERN PhotoLab

    1974-01-01

    The high-voltage installation of the linac 1 preinjector in its house-sized Faraday cage. Originally driven by a 520 kV Cockcroft-Walton generator, at the time of this picture the HV came from a 520 kV SAMES generator. The column in the front carries a capacitor. The cubicle in the right background is the electronics platform (see 7403120). The round structure at left houses the ion source, from where the protons (and sometimes other ions), electrostatically accelerated to 520 keV, enter the Alvarez structure of linac 1, to be accelerated to 50 MeV. Jean-Luc Vallet is busy with servicing the installation. See also 7403064X, 7403066X.

  3. High-voltage test and training of plastic streamer tubes for the DELPHI hadron calorimeter

    International Nuclear Information System (INIS)

    Alekseev, G.D.; Cellar, S.; Khomenko, B.A.; Korytov, A.V.; Kulinich, P.A.; Micelmacher, G.V.; Sedykh, Yu.V.; Toledo, R.

    1987-01-01

    The results of high-voltage test and training of plastic streamer tubes of the DELPHI hadron calorimeter are presented. The testing technique is considered in detail. The equipment for high-voltage training consists of a mini-computer, CAMAC-electronics, a controllable high-voltage supply and a digital ampermeter. The experimental results shows that high-voltage training of streamer tubes improves their characteristics. The value of dark current decreased up to 1 μA. The operational voltage range increased by a value more than 300 V

  4. Market Report : The high-voltage transmission market in Poland

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2002-06-01

    In order to meet the accession requirements for membership to the European Union, Poland is currently restructuring its energy sector, and the initiative to privatise the electric power industry to full competition by 2005 is on course. This report describes the opportunities for foreign investors and suppliers of electrical equipment and services, particularly at this time when power demand is growing, the power grid infrastructure is ageing and obsolete components must be replaced. The total installed capacity in Poland is about 33,000 megawatts. This includes all installations of power plants and combined heat and power plants. An investment of $23 billion is anticipated by 2010 in order to modernize the electricity power industry and to meet the growing energy demand. Polski Siece Elektroenergetyczne, S.A. (PSE) is the state-owned company which controls Poland's high-voltage transmission grid. It operates a 220 kilovolt and 40 kV grid and holds the monopoly on acquiring and transmitting electricity in the country. Poland maintains grid interconnections with several other European countries and is looking to expand its network. Opportunities for Canadian suppliers lie in the areas of high-voltage power transmission equipment and services. Other opportunities lie in commercial prospects in sales of equipment and services. The report includes a section on international competition, and the Canadian position for both private- and public-sector companies. A section on market logistics describes distribution channels, market-entry considerations, import regulations, and export credit risks. A list of key contacts and support services is included with this report. refs., tabs.

  5. THE METHODS OF CALCULATIONS OF THE TEMPERATURE BREAKDOWN FIELD IN THE LINE OF THE MODEM HIGH-SPEED WIRE MILL

    Directory of Open Access Journals (Sweden)

    S. M. Zhuchkov

    2007-01-01

    Full Text Available The calculation methods of the temperature field of the breakdown, being rolled in lines of the modern high-speed wire mill, is developed on the basis of solving of problem of the contact exchange of hot metal with cold rollers.

  6. Computational Fluid Dynamics Investigation of Vortex Breakdown for a Delta Wing at High Angle of Attack

    National Research Council Canada - National Science Library

    Freeman, Jacob

    2003-01-01

    ... (a) in preparation for investigation of active control of vortex breakdown using steady, along- core blowing A flat delta-shaped half-wing with sharp leading edge and sweep angle of 600 was modeled...

  7. High voltage and high specific capacity dual intercalating electrode Li-ion batteries

    Science.gov (United States)

    West, William C. (Inventor); Blanco, Mario (Inventor)

    2010-01-01

    The present invention provides high capacity and high voltage Li-ion batteries that have a carbonaceous cathode and a nonaqueous electrolyte solution comprising LiF salt and an anion receptor that binds the fluoride ion. The batteries can comprise dual intercalating electrode Li ion batteries. Methods of the present invention use a cathode and electrode pair, wherein each of the electrodes reversibly intercalate ions provided by a LiF salt to make a high voltage and high specific capacity dual intercalating electrode Li-ion battery. The present methods and systems provide high-capacity batteries particularly useful in powering devices where minimizing battery mass is important.

  8. First high-voltage measurements using Ca{sup +} ions at the ALIVE experiment

    Energy Technology Data Exchange (ETDEWEB)

    König, K., E-mail: kkoenig@ikp.tu-darmstadt.de [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Geppert, Ch. [Universität Mainz, Institut für Kernchemie (Germany); Krämer, J.; Maaß, B. [Technische Universität Darmstadt, Institut für Kernphysik (Germany); Otten, E. W. [Universität Mainz, Institut für Physik (Germany); Ratajczyk, T.; Nörtershäuser, W. [Technische Universität Darmstadt, Institut für Kernphysik (Germany)

    2017-11-15

    Many physics experiments depend on accurate high-voltage measurements to determine for example the exact retardation potential of an electron spectrometer as in the KATRIN experiment or the acceleration voltage of the ions at ISOL facilities. Until now only precision high-voltage dividers can be used to measure voltages up to 65 kV with an accuracy of 1 ppm. However, these dividers need frequent calibration and cross-checking and the direct traceability is not given. In this article we will describe the status of an experiment which aims to measure high voltages using collinear laser spectroscopy and which has the potential to provide a high-voltage standard and hence, a calibration source for precision high-voltage dividers on the 1 ppm level.

  9. Development of high voltage PEEK wire with radiation-resistance and cryogenic characteristics

    International Nuclear Information System (INIS)

    Fujita, T.; Hirata, T.; Araki, S.; Ohara, H.; Nishimura, H.

    1989-01-01

    High voltage electric wires insulated with highly-refined polyetheretherketone (PEEK) have been developed for the wiring in fusion reactors, where the wire is required to withstand high voltage under high vacuum up to 10 -5 Torr. The PEEK wires having the advantages of PEEK resin including superior radiation resistance and cryogenic characteristics are usable over a wide range of temperature and in radiation fields. The results of withstand voltage tests proved that the PEEK wires exceeding 0.8 mm in insulation thickness withstand such specified high voltage conditions as 24 kV for 1 minutes by 10 times and 6.6 kV for 110 hours. The results also revealed that the withstand voltage is improved by providing a jacket layer over the insulation and decreased by periodical voltage charge, by bending of the specimen and by water in the conductor. This paper deal with the withstand voltage test results under varied conditions of the PEEK wires. (author)

  10. High-Voltage-Input Level Translator Using Standard CMOS

    Science.gov (United States)

    Yager, Jeremy A.; Mojarradi, Mohammad M.; Vo, Tuan A.; Blalock, Benjamin J.

    2011-01-01

    proposed integrated circuit would translate (1) a pair of input signals having a low differential potential and a possibly high common-mode potential into (2) a pair of output signals having the same low differential potential and a low common-mode potential. As used here, "low" and "high" refer to potentials that are, respectively, below or above the nominal supply potential (3.3 V) at which standard complementary metal oxide/semiconductor (CMOS) integrated circuits are designed to operate. The input common-mode potential could lie between 0 and 10 V; the output common-mode potential would be 2 V. This translation would make it possible to process the pair of signals by use of standard 3.3-V CMOS analog and/or mixed-signal (analog and digital) circuitry on the same integrated-circuit chip. A schematic of the circuit is shown in the figure. Standard 3.3-V CMOS circuitry cannot withstand input potentials greater than about 4 V. However, there are many applications that involve low-differential-potential, high-common-mode-potential input signal pairs and in which standard 3.3-V CMOS circuitry, which is relatively inexpensive, would be the most appropriate circuitry for performing other functions on the integrated-circuit chip that handles the high-potential input signals. Thus, there is a need to combine high-voltage input circuitry with standard low-voltage CMOS circuitry on the same integrated-circuit chip. The proposed circuit would satisfy this need. In the proposed circuit, the input signals would be coupled into both a level-shifting pair and a common-mode-sensing pair of CMOS transistors. The output of the level-shifting pair would be fed as input to a differential pair of transistors. The resulting differential current output would pass through six standoff transistors to be mirrored into an output branch by four heterojunction bipolar transistors. The mirrored differential current would be converted back to potential by a pair of diode-connected transistors

  11. Development of an intelligent high-voltage direct-current power supply for nuclear detectors

    International Nuclear Information System (INIS)

    Zhao Xiuliang

    1997-01-01

    The operation and performances of a new type direct-current high-voltage power supply are described. The power supply with intelligent feature is controlled by a single-chip microcomputer (8031), and various kinds of output voltage can be preset. The output-voltage is monitored and regulated by the single-chip microcomputer and displayed by LED. The output voltage is stable when the load current is within the allowable limits

  12. Performance of a 2-megawatt high voltage test load

    International Nuclear Information System (INIS)

    Horan, D.; Kustom, R.; Ferguson, M.

    1995-01-01

    A high-power, water-cooled resistive load which simulates the electrical load characteristics of a high-power klystron, capable of 2 megawatts dissipation at 95 kV DC, was built and installed at the Advanced Photon Source for use in load-testing high voltage power supplies. During this testing, the test load has logged approximately 35 hours of operation at power levels in excess of one mezawatt. Slight variations in the resistance of the load during operation indicate that leakage currents in the cooling water may be a significant factor affecting the performance of the load. Sufficient performance data have been collected to indicate that leakage current through the deionized (DI) water coolant shunts roughly 15 percent of the full-load current around the load resistor elements. The leakage current could cause deterioration of internal components of the load. The load pressure vessel was disassembled and inspected internally for any signs of significant wear and distress. Results of this inspection and possible modifications for improved performance will be discussed

  13. Method and system for a gas tube switch-based voltage source high voltage direct current transmission system

    Science.gov (United States)

    She, Xu; Chokhawala, Rahul Shantilal; Zhou, Rui; Zhang, Di; Sommerer, Timothy John; Bray, James William

    2016-12-13

    A voltage source converter based high-voltage direct-current (HVDC) transmission system includes a voltage source converter (VSC)-based power converter channel. The VSC-based power converter channel includes an AC-DC converter and a DC-AC inverter electrically coupled to the AC-DC converter. The AC-DC converter and a DC-AC inverter include at least one gas tube switching device coupled in electrical anti-parallel with a respective gas tube diode. The VSC-based power converter channel includes a commutating circuit communicatively coupled to one or more of the at least one gas tube switching devices. The commutating circuit is configured to "switch on" a respective one of the one or more gas tube switching devices during a first portion of an operational cycle and "switch off" the respective one of the one or more gas tube switching devices during a second portion of the operational cycle.

  14. Pressure and gap length dependence of gap breakdown voltage and discharge current of discharge-pumped KrF excimer laser. Hoden reiki KrF laser no zetsuen hakai den prime atsu to reiki denryu no atsuryoku, gap cho izon sei

    Energy Technology Data Exchange (ETDEWEB)

    Yukimura, K.; Kawakami, H. (Doshisha Univ., Tokyo (Japan)); Hitomi, K. (Kyoto Polytechnic College, Kyoto (Japan))

    1991-04-20

    On the gap destruction characteristics of UV-preionized discharge-pumped KrF excimer laser (charge transfer type) and the electric characteristics of the excited discharge, studies were made by changing the pressure (1.5-3 atm) and the discharge gap length (14-21 mm) of the discharge medium. (1) Gap breakdown voltage and the maximum current of the excited discharge give a similarity by a product of pressure and the gap length at the charge volatge. (2) Insulation breakdown of the gap occurs at the wave front of the applied voltage and the breakdown time gets delayed by the decreasing voltage applied. By setting the ionization index at constant value 20, the gap breakdown voltage is estimated at the error within 10%. (3) The relation between the maximum current, pressure and the gap length product changes the characteristics by the charge voltage of the primary condenser. With the result combined with the standardization of voltage/current of the excited discharge, the electric characteristics at the specific pressure and gap length can be readily known. 10 refs., 10 figs.

  15. Thermodynamic efficiency of synthesis, storage and breakdown of the high-energy metabolites by photosynthetic microalgae

    International Nuclear Information System (INIS)

    Sorgüven, Esra; Özilgen, Mustafa

    2013-01-01

    Lipids and carbohydrates are employed in the nature to store internal energy due to the large number of the high energy atomic bonds in their structure. Internal energy stored in the bonds is used to fuel work producing engines or metabolic activity of living organisms. This paper investigates the thermodynamic efficiency of the glucose and lipid synthesis and breakdown by photosynthetic microalgae. Photosynthetic microalgae are able to convert 3.8% of the solar exergy into the chemical exergy of algal lipid. As the microalgae convert the first product of the photosynthesis, i.e. glucose, into lipid, 47–49% of the chemical exergy is lost. If the microalgal cell consumes the photosynthetically produced glucose for its own energy demand, then about 30% of the glucose exergy can be converted into work potential in case of immediate and short-term energy demands. Organism can convert about 22% of the glucose exergy into work potential after a long-term storage. If the algal lipid is harvested for biodiesel production and the produced biodiesel is combusted in a Diesel engine, then about 17% of the exergy of the photosynthetically produced glucose can be converted into useful work. Biodiesel is among the most popular renewable fuels. The lipids are harvested from their storage in the cells to produce biodiesel before following the lipid breakdown path of the cellular metabolism. Our analysis indicates that, extracting the first product of photosynthesis, i.e. glucose or glucose polymers instead of lipids may be more efficient thermodynamically, if new motors capable to extract their bond energy is developed. - Highlights: • Photosynthetic microalgae convert 3.8% of the solar exergy into the chemical exergy of algal lipid. • Converting the first product of the photosynthesis (glucose) into lipid causes 47–49% of exergy loss. • Organism can convert 30% of the glucose exergy into work potential for its own immediate or short-term energy demand. • Organism can

  16. Development of high voltage lead wires using electron beam irradiation

    International Nuclear Information System (INIS)

    Bae Hunjai; Sohn Hosoung; Choi Dongjung

    1995-01-01

    It is known to those skilled to the art that the electric wires used in high voltage operating electric equipments such as TV sets, microwave ovens, duplicators and etc., have such a structure that a conductor is coated with an insulating layer which is encapsulated with a protecting jacket layer. The electric wire specification such as UL and CSA requires superior cut-through property and flame-retardant property of the wire for utilization safety. The cut-through property of insulation material, for example, high density polyethylene, can be increased by crosslinking of the polymer. Also the flame-retardant property of jacket material which protects the flammable inner insulation can be raised by flame-retardant formulating of the material. In the wire and cable industry, crosslinking by electron beam processing is more effective than that by chemical processing in the viewpoint of through-put rate of the products. The jacket layer of the wire plays the role of protecting the insulation material from burning. The protecting ability of the jacket is related to its inherent flammability and formability of swollen carbonated layer when burned. Crosslinking of the material gives a good formability of swollen carbonated layer, and it protects the insulation material from direct flame. In formulating the flame-retardant jacket material, a crosslinking system must be considered with base polymers and other flame-retardant additives. (Author)

  17. Development of high voltage lead wires using electron beam irradiation

    International Nuclear Information System (INIS)

    Bae Hunjai; Sohn Hosoung; Choi Dongjung

    1995-01-01

    It is known to those skilled to the art that the electric wires used in high voltage operating electric equipment such as TV sets, microwave ovens, duplicators etc., have such a structure that a conductor is coated with an insulating layer which is encapsulated with a protecting jacket layer. The electric wire specification such as UL and CSA requires superior cut-through and flame-retardant property of the wire for utilization safety. The cut-through property of insulation material, for example, high density polyethylene, can be increased by crosslinking of the polymer. Also the flame-retardant property of jacket material which protects the flammable inner insulation can be raised by flame-retardant formulating of the material. In the wire and cable industry, crosslinking by electron beam processing is more effective than that by chemical processing in the viewpoint of through-put rate of the products. The jacket layer of the wire plays the role of protecting the insulation material from burning. The protecting ability of the jacket is related to its inherent flammability and formability of swollen carbonated layer when burned. Crosslinking of the material gives a good formability of swollen carbonated layer, and it protects the insulation material from direct flame. In formulating the flame-retardant jacket material, a crosslinking system must be considered with base polymers and other flame-retardant additives. (Author)

  18. High Voltage Hybrid Electric Propulsion - Multilayered Functional Insulation System (MFIS) NASA-GRC

    Science.gov (United States)

    Lizcano, M.

    2017-01-01

    High power transmission cables pose a key challenge in future Hybrid Electric Propulsion Aircraft. The challenge arises in developing safe transmission lines that can withstand the unique environment found in aircraft while providing megawatts of power. High voltage AC, variable frequency cables do not currently exist and present particular electrical insulation challenges since electrical arcing and high heating are more prevalent at higher voltages and frequencies. Identifying and developing materials that maintain their dielectric properties at high voltage and frequencies is crucial.

  19. A Four-Phase High Voltage Conversion Ratio Bidirectional DC-DC Converter for Battery Applications

    Directory of Open Access Journals (Sweden)

    Li-Kun Xue

    2015-06-01

    Full Text Available This study presents a four-phase interleaved high voltage conversion ratio bidirectional DC-DC converter circuit based on coupled inductors and switched capacitors, which can eliminate the defects of conventional high voltage conversion ratio bidirectional DC-DC converters in terms of high-voltage/current stress, less efficiency and low-power limitation. Parallel channels are used to reduce current stress at the low-voltage side and series connected switched capacitors are used to enlarge voltage conversion ratio, reduce voltage stress and achieve auto current sharing. This paper proposes the operation principle, feature analysis and optimization design considerations. On this basis the objectives of high voltage conversion ratio, low voltage/current stress, high power density, high efficiency and high-power applications can be achieved. Some experimental results based on a 500 W prototype converter (24 V to 48 V at low-voltage side, 400 V at high-voltage side are given to verify the theoretical analysis and the effectiveness of the proposed converter.

  20. Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

    International Nuclear Information System (INIS)

    Insepov, Z.; Norem, J.; Veitzer, S.

    2010-01-01

    Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

  1. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed

    2012-10-06

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  2. 50V All-PMOS Charge Pumps Using Low-Voltage Capacitors

    KAUST Repository

    Emira, Ahmed; AbdelGhany, M.; Elsayed, M.; Elshurafa, Amro M.; Sedky, S.; Salama, Khaled N.

    2012-01-01

    In this work, two high-voltage charge pumps are introduced. In order to minimize the area of the pumping capacitors, which dominates the overall area of the charge pump, high density capacitors have been utilized. Nonetheless, these high density capacitors suffer from low breakdown voltage which is not compatible with the targeted high voltage application. To circumvent the breakdown limitation, a special clocking scheme is used to limit the maximum voltage across any pumping capacitor. The two charge pump circuits were fabricated in a 0:6m CMOS technology with poly0-poly1 capacitors. The output voltage of the two charge pumps reached 42:8V and 51V while the voltage across any capacitor did not exceed the value of the input voltage. Compared to other designs reported in the literature, the proposed charge pump provides the highest output voltage which makes it more suitable for tuning MEMS devices.

  3. A 600kV 15mA Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage

    International Nuclear Information System (INIS)

    Su Tongling; Zhang Yimin; Chen Shangwen; Liu Yantong; Lv Huiyi; Liu Jiangtao

    2006-01-01

    A Cockcroft-Walton high-voltage power supply with high stability and low-ripple voltage has been developed. This power supply has been operated in a ns pulse neutron generator. The maximum non-load voltage is 600kV while the working voltage and load current are 550kV and 15mA, respectively. The tested results indicate that when the power supply is operated at 300kV, 6.7mA and the input voltage varies +/-10%, the long-term stability of the output voltage is S=(0.300-1.006)x10 -3 . The ripple voltage is δU P-P =6.2V at 300kV, 6.8-8.3mA and the ratio of δU P-P to the output voltage V H is δU P-P /V H =2.1x10 -5

  4. Application of high voltage electric field (HVEF) drying technology in potato chips

    International Nuclear Information System (INIS)

    Bai, Yaxiang; Shi, Hua; Yang, Yaxin

    2013-01-01

    In order to improve the drying efficiency and qualities of vegetable by high voltage electric field (HVEF), potato chips as a representative of vegetable was dried using a high voltage electric drying systems at 20°C. The shrinkage rate, water absorption and rehydration ratio of dried potato chips were measured. The results indicated that the drying rate of potato chips was significantly improved in the high voltage electric drying systems. The shrinkage rate of potato chips dried by high voltage electric field was 1.1% lower than that by oven drying method. And the rehydration rate of high voltage electric field was 24.6% higher than that by oven drying method. High voltage electric field drying is very advantageous and can be used as a substitute for traditional drying method.

  5. BEHAVIOUR OF BACKFILL MATERIALS FOR ELECTRICAL GROUNDING SYSTEMS UNDER HIGH VOLTAGE CONDITIONS

    Directory of Open Access Journals (Sweden)

    S. C. LIM

    2015-06-01

    Full Text Available Backfill materials like Bentonite and cement are effective in lowering grounding resistance of electrodes for a considerable period. During lightning, switching impulses and earth fault occurrences in medium and high voltage networks, the grounding system needs to handle extremely high currents either for a short duration or prolonged period respectively. This paper investigates the behaviour of bentonite, cement and sand under impulse and alternating high voltage (50Hz conditions. Fulguritic-formation was observed in all materials under alternating high voltage. The findings reveal that performance of grounding systems under high voltage conditions may significantly change from the outcomes anticipated at design stage.

  6. Preparation and Dielectric Properties of SiC/LSR Nanocomposites for Insulation of High Voltage Direct Current Cable Accessories.

    Science.gov (United States)

    Shang, Nanqiang; Chen, Qingguo; Wei, Xinzhe

    2018-03-08

    The conductivity mismatch in the composite insulation of high voltage direct current (HVDC) cable accessories causes electric field distribution distortion and even insulation breakdown. Therefore, a liquid silicone rubber (LSR) filled with SiC nanoparticles is prepared for the insulation of cable accessories. The micro-morphology of the SiC/LSR nanocomposites is observed by scanning electron microscopy, and their trap parameters are characterized using thermal stimulated current (TSC) tests. Moreover, the dielectric properties of SiC/LSR nanocomposites with different SiC concentrations are tested. The results show that the 3 wt % SiC/LSR sample has the best nonlinear conductivity, more than one order of magnitude higher than that of pure LSR with improved temperature and nonlinear conductivity coefficients. The relative permittivity increased 0.2 and dielectric loss factor increased 0.003, while its breakdown strength decreased 5 kV/mm compared to those of pure LSR. Moreover, the TSC results indicate the introduction of SiC nanoparticles reduced the trap level and trap density. Furthermore, the SiC nanoparticles filling significantly increased the sensitivity of LSR to electric field stress and temperature changes, enhancing the conductivity and electric field distribution within the HVDC cable accessories, thus improving the reliability of the HVDC cable accessories.

  7. High-Voltage, Multiphasic, Nanosecond Pulses to Modulate Cellular Responses.

    Science.gov (United States)

    Ryan, Hollie A; Hirakawa, Shinji; Yang, Enbo; Zhou, Chunrong; Xiao, Shu

    2018-04-01

    Nanosecond electric pulses are an effective power source in plasma medicine and biological stimulation, in which biophysical responses are governed by peak power and not energy. While uniphasic nanosecond pulse generators are widely available, the recent discovery that biological effects can be uniquely modulated by reversing the polarity of nanosecond duration pulses calls for the development of a multimodal pulse generator. This paper describes a method to generate nanosecond multiphasic pulses for biomedical use, and specifically demonstrates its ability to cancel or enhance cell swelling and blebbing. The generator consists of a series of the fundamental module, which includes a capacitor and a MOSFET switch. A positive or a negative phase pulse module can be produced based on how the switch is connected. Stacking the modules in series can increase the voltage up to 5 kV. Multiple stacks in parallel can create multiphase outputs. As each stack is independently controlled and charged, multiphasic pulses can be created to produce flexible and versatile pulse waveforms. The circuit topology can be used for high-frequency uniphasic or biphasic nanosecond burst pulse production, creating numerous opportunities for the generator in electroporation applications, tissue ablation, wound healing, and nonthermal plasma generation.

  8. Isolated data acquisition system for high voltage applications

    International Nuclear Information System (INIS)

    Waitz, A.; Donaldson, A.

    1985-06-01

    This report describes the design and operation of a microcomputer controlled system for acquisition of both analog and binary data within the high voltage stages of a linac modulator. The system is comprised of a microprocessor Controller which communicates with the remote data Acquisition circuits via an optical bus. The bus, which uses a 1 MHz Manchester II format, is configured as a loop, starting at the Controller, daisy-chaining the remote cards and terminating back at the Controller. Upon receiving a linac timing pulse, the Controller sends addressed commands to the individual remote cards and receives data back. It then passes this data to the linac control system through a Multibus connection. Each remote circuit can return 16 binary sense and 7 (12 bit) analog parameters within 270 us. This speed is possible because of a pipelined design where one word is transmitted while another is being converted. A data conversion cycle is initiated when a remote data acquisition card receives the proper command and address from the controller

  9. Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

    Energy Technology Data Exchange (ETDEWEB)

    Maxson, Jared; Bazarov, Ivan; Dunham, Bruce; Dobbins, John; Liu, Xianghong; Smolenski, Karl [Cornell Laboratory for Accelerator-Based Sciences and Education, Cornell University, Ithaca, New York 14853 (United States)

    2014-09-15

    A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. These results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.

  10. Inductive energy storage using high voltage vacuum circuit breakers

    International Nuclear Information System (INIS)

    McCann, R.B.; Woodson, H.H.; Mukutmoni, T.

    1976-01-01

    Controlled thermonuclear fusion experiments currently being planned require large amounts of pulsed energy. Inductive energy storage systems (IES) appear to be attractive for at least two applications in the fusion research program: high beta devices and those employing turbulent heating. The well-known roadblock to successful implementation of IES is the development of a reliable and cost-effective off-switch capable of handling high currents and withstanding high recovery voltages. The University of Texas at Austin has a program to explore the application of conventional vacuum circuit breakers designed for use in AC systems, in conjunction with appropriate counter pulse circuits, as off-switches in inductive energy storage systems. The present paper describes the IES employing vacuum circuit breakers as off-switches. Since the deionization property of these circuit breakers is of great importance to the design and the cost of the counter-pulse circuit, a synthetic test installation to test these breakers has been conceived, designed and is being installed in the Fusion Research Center, University of Texas at Austin. Some design aspects of the facility will be discussed here. Finally, the results of the study on a mathematical model developed and optimized to determine the least cost system which meets both the requirements of an off-switch for IES Systems and the ratings of circuit breakers used in power systems has been discussed. This analysis indicates that the most important factor with respect to the system cost is the derating of the circuit breakers to obtain satisfactory lifetimes

  11. High voltage tests of an electrostatic accelerator for different mixtures of gases at various pressures

    International Nuclear Information System (INIS)

    Hellborg, R.

    1996-01-01

    An account is given of high voltage tests of an electrostatic accelerator. High voltage conditioning is measured and is reported for the same accelerator tube after different periods of usage. Tests of different mixtures of sulphur hexafluoride and nitrogen have been performed. A considerable amount of data was obtained for various parameters connected with the high voltage system for different proportions of nitrogen in sulphur hexafluoride at various gas pressures. (orig.)

  12. Ultra-low leakage and high breakdown Schottky diodes fabricated on free-standing GaN substrate

    International Nuclear Information System (INIS)

    Wang, Yaqi; Alur, Siddharth; Sharma, Yogesh; Tong, Fei; Thapa, Resham; Gartland, Patrick; Issacs-Smith, Tamara; Ahyi, Claude; Williams, John; Park, Minseo; Johnson, Mark; Paskova, Tanya; Preble, Edward A; Evans, Keith R

    2011-01-01

    Vertical Schottky diodes were fabricated on the bulk GaN substrate with decreasing impurity concentration from N-face to Ga-face. An array of circular Pt Schottky contacts and a full backside Ti/Al/Ni/Au ohmic contact were prepared on the Ga-face and the N-face of the n-GaN substrate, respectively. The Schottky diode exhibits a minimum specific on-state resistance of 1.3 mΩ cm 2 and a maximum breakdown voltage of 600 V, resulting in a figure-of- merit of 275 MW cm −2 . An ultra-low reverse leakage current density of 3.7 × 10 −4 A cm −2 at reverse bias of 400 V was observed. Temperature-dependent I–V measurements were also carried out to study the forward and reverse transportation mechanisms. (fast track communication)

  13. Electrothermal and microstructural characterization of varistors ceramics used in high-voltage surge arresters; Caracterizacao eletrotermica e microestrutural de ceramicas varistoras utilizadas em para-raios de altas tensoes

    Energy Technology Data Exchange (ETDEWEB)

    Barbosa, Flavio Bittencourt; Furtado, Jose G. de Melo [Centro de Pesquisas de Energia Eletrica (CEPEL), Rio de Janeiro, RJ (Brazil); Nobrega, Maria C. de S. [Universidade Federal do Rio de Janeiro (COPPE/UFRJ), RJ (Brazil). Coordenacao dos Programas de Pos-Graduacao de Engenharia

    2008-07-01

    In this work is studied the electrothermal behavior of varistor ceramic blocks used in high voltage surge arresters of transmission and distribution lines, relating this behavior to microstructural characteristics of the studied varistor ceramics. We studied blocks of zinc oxide varistors with nominal voltage of 4.0 kV, by and voltage-capacitance characterization curves, reference voltage test, impulse residual voltage, polarization tests and induced degradation tests. On the other hand, the microstructural characterization was made by scanning electron microscopy and energy-dispersive spectroscopy. The obtained results allow to correlate the behavior of the resistive component of the leakage current with the microstructural characteristics of the studied varistors, specially in pre-breakdown region. (author)

  14. High voltage holding in the negative ion sources with cesium deposition

    Energy Technology Data Exchange (ETDEWEB)

    Belchenko, Yu.; Abdrashitov, G.; Ivanov, A.; Sanin, A.; Sotnikov, O., E-mail: O.Z.Sotnikov@inp.nsk.su [Budker Institute of Nuclear Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk (Russian Federation)

    2016-02-15

    High voltage holding of the large surface-plasma negative ion source with cesium deposition was studied. It was found that heating of ion-optical system electrodes to temperature >100 °C facilitates the source conditioning by high voltage pulses in vacuum and by beam shots. The procedure of electrode conditioning and the data on high-voltage holding in the negative ion source with small cesium seed are described. The mechanism of high voltage holding improvement by depletion of cesium coverage is discussed.

  15. The Thermal Regime Around Buried Submarine High-Voltage Cables

    Science.gov (United States)

    Emeana, C. J.; Dix, J.; Henstock, T.; Gernon, T.; Thompson, C.; Pilgrim, J.

    2015-12-01

    The expansion of offshore renewable energy infrastructure and the desire for "trans-continental shelf" power transmission, all require the use of submarine High Voltage (HV) cables. These cables have maximum operating surface temperatures of up to 70oC and are typically buried at depths of 1-2 m beneath the seabed, within the wide range of substrates found on the continental shelf. However, the thermal properties of near surface shelf sediments are poorly understood and this increases the uncertainty in determining the required cable current ratings, cable reliability and the potential effects on the sedimentary environments. We present temperature measurements from a 2D laboratory experiment, designed to represent a buried, submarine HV cable. We used a large (2.5 m-high) tank, filled with water-saturated ballotini and instrumented with 120 thermocouples, which measured the time-dependent 2D temperature distributions around the heat source. The experiments use a buried heat source to represent a series of realistic cable surface temperatures with the aim for identifying the thermal regimes generated within typical non-cohesive shelf sediments: coarse silt, fine sand and very coarse sand. The steady state heat flow regimes, and normalised and radial temperature distributions were assessed. Our results show that at temperatures up to 60°C above ambient, the thermal regimes are conductive for the coarse silt sediments and convective for the very coarse sand sediments even at 7°C above ambient. However, the heat flow pattern through the fine sand sediment shows a transition from conductive to convective heat flow at a temperature of approximately 20°C above ambient. These findings offer an important new understanding of the thermal regimes associated with submarine HV cables buried in different substrates and has huge impacts on cable ratings as the IEC 60287 standard only considers conductive heat flow as well as other potential near surface impacts.

  16. Power-supply system for high-voltage electron guns with grid control

    International Nuclear Information System (INIS)

    Grigorev, Y.V.

    1985-01-01

    A power-supply system for electron guns with grid control is described which consists of a source of accelerating voltage between 20 and 180 kV with a current of 100 mA and a control circuit for an electron gun that contains a pulse generator having an output voltage of up to 5 kV for pulse durations of 2, 10, 50 and 90 microseconds. The output pulses of the generator are synchronized with a certain phase of the cathode heater current of the gun, and they can be repeated at a frequency between 100 and 0.4 Hz. The system is reliable and resistant to the overloads associated with breakdowns in the gun

  17. 30 CFR 75.803 - Fail safe ground check circuits on high-voltage resistance grounded systems.

    Science.gov (United States)

    2010-07-01

    ... High-Voltage Distribution § 75.803 Fail safe ground check circuits on high-voltage resistance grounded systems. [Statutory Provisions] On and after September 30, 1970, high-voltage, resistance grounded systems... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Fail safe ground check circuits on high-voltage...

  18. Construction of control and instrumentation devices of high voltage power supply of double chamber plasma nitrogen

    International Nuclear Information System (INIS)

    Saminto; Eko Priyono; Sugeng Riyanto

    2013-01-01

    A control and instrumentation devices of high voltage power supply of double chamber plasma nitrogen have been made. This device consists of the software and hardware component. Hardware component consists of SCR phase angle controller LPC-50HDA type, T100MD1616+ PLC, high voltage transformer and voltage rectifier system. Software component used a LADDER program and TBasic serves to control of the high voltage output. The components in these devices have been tested in the double chamber plasma nitrogen. Its performance meet with the design criteria that can supply of plasma nitrogen operation voltage in the range 290 Vdc to 851 Vdc with glow discharge current 0.4 A to 1.4 A. In general it can be said that the control and instrumentation devices of high voltage power supply is ready for use at the double chamber plasma nitrogen device. (author)

  19. Design of auto-control high-voltage control system of pulsed neutron generator

    International Nuclear Information System (INIS)

    Lv Juntao

    2008-01-01

    It is difficult to produce multiple anode controlling time sequences under different logging mode for the high-voltage control system of the conventional pulsed neutron generator. It is also difficult realize sequential control among anode high-voltage, filament power supply and target voltage to make neutron yield stable. To these problems, an auto-control high-voltage system of neutron pulsed generator was designed. It not only can achieve anode high-voltage double blast time sequences, which can measure multiple neutron blast time sequences such as Σ, activated spectrum, etc. under inelastic scattering mode, but also can realize neutron generator real-time measurement of multi-state parameters and auto-control such as target voltage pulse width modulation (PWM), filament current, anode current, etc., there by it can produce stable neutron yield and realize stable and accurate measurement of the pulsed neutron full spectral loging tool. (authors)

  20. IBM-PC based high voltage controller [Paper No.: L7

    International Nuclear Information System (INIS)

    Mondal, N.K.; Kalmani, S.D.

    1993-01-01

    A simple IBM-PC/XT based high voltage controller is designed for C.A.E.N. high voltage supply unit, which is being used for testing the prototype detector for future accelerator experiment. The high voltage output of the supply unit can be remotely programmed. The V-set Lemo connectors at the rear panel provides the remote control facility. Similarly V-mon and I-mon can be used for remotely monitoring the voltage set and the current drawn from the supply unit. The controller described here sets the high voltage through V-set and monitors the voltage set, through V-mon at a pre-determined time interval. The monitoring is a background job and is done as an interrupt service routine of IRQ3. A simple menu driven software package used is written in Q-Basic and MASM. (author). 1 fig

  1. 30 CFR 18.54 - High-voltage continuous mining machines.

    Science.gov (United States)

    2010-07-01

    ... 30 Mineral Resources 1 2010-07-01 2010-07-01 false High-voltage continuous mining machines. 18.54... and Design Requirements § 18.54 High-voltage continuous mining machines. (a) Separation of high... ground. (e) Onboard ungrounded, three-phase power circuit. A continuous mining machine designed with an...

  2. Suppression of the high-frequency disturbances in low-voltage circuits caused by disconnector operation in high-voltage open-air substations

    Energy Technology Data Exchange (ETDEWEB)

    Savic, M.S.

    1986-07-01

    The switching off and on of small capacitive currents charging busbar capacitances, connection conductors and open circuit breakers with disconnectors causes high-frequency transients in high-voltage networks. In low voltage circuits, these transient processes induce dangerous overvoltages for the electronic equipment in the substation. A modified construction of the disconnector with a damping resistor was investigated. Digital simulation of the transient process in a high-voltage network during the arcing period between the disconnector contacts with and without damping resistor were performed. A significant decrease of the arcing duration and the decrease of the electromagnetic field magnitude in the vicinity of the operating disconnector were noticed. In the low voltage circuit protected with the surge arrester, the overvoltage magnitude was not affected by the damping resistor due to the arrester protection effect.

  3. AC transmission, with very high voltages and the 750 kV line

    Energy Technology Data Exchange (ETDEWEB)

    Bocker, H

    1964-01-01

    The economic case for adoption of extra-high voltages for transmitting electric power over distances of the order of 1000 km is discussed. Some special technical developments for solving the problems attached to such high voltages are briefly discussed, particularly in the fields of switching and transients suppression. The first 750-kV projects in Canada and Russia are mentioned. Equipment, e.g., bushings, transformers, etc., operating at such voltages are illustrated.

  4. High glycogen levels enhance glycogen breakdown in isolated contracting skeletal muscle

    DEFF Research Database (Denmark)

    Richter, Erik; Galbo, H

    1986-01-01

    and after 15 min of intermittent electrical muscle stimulation. Before stimulation, glycogen was higher in rats that swam on the preceding day (supercompensated rats) compared with controls. During muscle contractions, glycogen breakdown in fast-twitch red and white fibers was larger in supercompensated...

  5. Technical-economic evaluation of the utilization of closing resistor in CEMIG extra-high voltage circuit breakers

    Energy Technology Data Exchange (ETDEWEB)

    Rocha, Angelica C.O.; Pinto, Roberto del Giudice R.; Teixeira, Jose Cleber; Fonseca, Rodrigo Assuncao; F, Junior, Sebastiao V [Companhia Energetica de Minas Gerais (CEMIG), Belo Horizonte, MG (Brazil)

    1994-12-31

    This paper presents the technical and economic studies performed by CEMIG, Companhia Energetica de Minas Gerais, Brazil, concerning the use of closing resistor in its extra-high voltage (EHV) breakers. The analysis emphasizes the advantages which could be achieved with the elimination of the resistor as far as costs and reliability are concerned. This evaluation was motivated by two 500 kV breaker failures resulting from the breakdown of the closing resistor operation mechanism. These occurrences resulted in operative restriction for CEMIG EHV system. The analysis demanded a review of the capability criteria of silicon carbide (Si C) gap arresters, which are still greatly used in CEMIG EHV System, and of the procedures to be applied when carrying out the transient studies. The investigation resulted in the prompt removal of closing resistors from circuit breakers in CEMIG extra-high voltage system generating an economy of approximately U$ 840,00 and an improvement in safety and system reliability. (author) 13 refs., 4 figs., 1 tab.

  6. Numerical study of the propagation of high power microwave pulses in air breakdown environment

    International Nuclear Information System (INIS)

    Kim, J.; Kuo, S.P.

    1992-01-01

    A theoretical model based on a set of two modal equations has been developed to describe self-consistently the propagation of an intense microwave pulse in an air breakdown environment. It includes Poynting's equation for the continuity of the power flux of the pulse and the rate equation of the electron density. A forward wave approximation is used to simplify Poynting's equation and a semi-empirical formula for the ionization frequency as a function of the wave field amplitude is adopted for this model. In order to improve the numerical efficiency of the model in terms of the required computation time and available subroutines for numerical analysis of pulse propagation over a long distance, a transformation to the frame of local time of the pulse is introduced. The effect of space-time dependence of the group velocity of the pulse is included in this properly designed transformation. The inhomogeneous feature of the background pressure is also preserved in the model. The resultant equations are reduced to the forms which can be solved directly by the available subroutine of ODE solver. In this work, a comprehensive numerical analysis of the propagation of high power microwave pulse through the atmosphere is performed. It is shown that the pulse energy can severely be attenuated by the self-generated plasma. Therefore, the aim of the present study is to identify the optimum parameters of the pulse so that the energy loss of the pulse before reaching the destination can be minimized. These parameters include the power, frequency, shape and length of the pulse. The conditions for maximizing the ionization at a destinated region in the upper atmosphere will also be determined

  7. Mathematical modeling of agricultural fires beneath high voltage transmission lines

    International Nuclear Information System (INIS)

    El-Zohri, Emad H.; Shafey, Hamdy M.; Abdel-Salam, M.; Ahmed, A.

    2011-01-01

    This paper presents a mathematical model for agricultural fires based on a multi-phase formulation. The model includes dehydration and pyrolysis of agricultural fuel and pyrolysis products. The model considers a homogeneous distribution of the agricultural solid fuel particles, interacting with the gas flow via source terms. These terms include: drag forces, production of water vapour and pyrolysis products, radiative and convective heat exchange. A multi-phase radiative transfer equation for absorbing-emitting medium is considered to account for the radiative heat exchange between the gas and solid phases of the fire. The main outputs of the present model are most important to study the influence of agricultural fire occurring beneath high voltage transmission lines. The agricultural fire causes a flashover due to the ambient temperature rise and soot accumulation on the insulator of these transmission lines. Numerical results of the present model are obtained for flat grassland fires to study the effects of wind velocity, solid fuel moisture content and ignition length on some selected fire outputs. These outputs include the temperature, velocity, soot volume fraction fields of the gas phase, together with fire propagation rate and flame geometry. The numerical results are compared to the available experimental work in the literature. -- Research highlights: → The model is sensitive to the initial condition of the ignition length affecting the fire propagation rate and width. → The model predicts the effects of both the wind velocity and the fuel moisture content on fire propagation rate, in agreement with the available experimental work in the literature. → The model shows that both the wind velocity and the fuel moisture content are important factors affecting the fire plume thickness, location, and inclination. → The model is able to visualize the flame geometry through tracing radiative heat rates exceeding a threshold value for flame visibility (60 k

  8. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Fasanella, Giuseppe

    2017-01-01

    The CMS Electromagnetic Calorimeter utilizes scintillating lead tungstate crystals, with avalanche photodiodes (APD) as photo-detectors in the barrel part. 1224 HV channels bias groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  9. High precision, low disturbance calibration of the High Voltage system of the CMS Barrel Electromagnetic Calorimeter

    CERN Document Server

    Fasanella, Giuseppe

    2016-01-01

    The CMS Electromagnetic Calorimeter utilizes scintillating lead tungstate crystals, with avalanche photodiodes (APD) as photo-detectors in the barrel part. 1224 HV channels bias groups of 50 APD pairs, each at a voltage of about 380 V. The APD gain dependence on the voltage is 3pct/V. A stability of better than 60 mV is needed to have negligible impact on the calorimeter energy resolution. Until 2015 manual calibrations were performed yearly. A new calibration system was deployed recently, which satisfies the requirement of low disturbance and high precision. The system is discussed in detail and first operational experience is presented.

  10. Investigating Enhancement Mode Gallium Nitride Power FETs in High Voltage, High Frequency Soft Switching Converters

    DEFF Research Database (Denmark)

    Nour, Yasser; Knott, Arnold; Jørgensen, Ivan Harald Holger

    2016-01-01

    An increased attention has been detected to develop smaller and lighter high voltage power converters in the range of 50V to 400V domain. The main applications for these converters are mainly focused for Power over Ethernet (PoE), LED lighting and AC adapters. This work will discuss a study...

  11. Integrated Reconfigurable High-Voltage Transmitting Circuit for CMUTs

    DEFF Research Database (Denmark)

    Llimos Muntal, Pere; Larsen, Dennis Øland; Jørgensen, Ivan Harald Holger

    2014-01-01

    -out and measurements are performed on the integrated circuit. The transmitting circuit is reconfigurable externally making it able to drive a wide variety of CMUTs. The transmitting circuit can generate several pulse shapes, pulse voltages up to 100 V, maximum pulse range of 50 V and frequencies up to 5 MHz. The area...

  12. Analysis of transistor and snubber turn-off dynamics in high-frequency high-voltage high-power converters

    Science.gov (United States)

    Wilson, P. M.; Wilson, T. G.; Owen, H. A., Jr.

    Dc to dc converters which operate reliably and efficiently at switching frequencies high enough to effect substantial reductions in the size and weight of converter energy storage elements are studied. A two winding current or voltage stepup (buck boost) dc-to-dc converter power stage submodule designed to operate in the 2.5-kW range, with an input voltage range of 110 to 180 V dc, and an output voltage of 250 V dc is emphasized. In order to assess the limitations of present day component and circuit technologies, a design goal switching frequency of 10 kHz was maintained. The converter design requirements represent a unique combination of high frequency, high voltage, and high power operation. The turn off dynamics of the primary circuit power switching transistor and its associated turn off snubber circuitry are investigated.

  13. Particle flows to shape and voltage surface discontinuities in the electron sheath surrounding a high voltage solar array in LEO

    Science.gov (United States)

    Metz, Roger N.

    1991-01-01

    This paper discusses the numerical modeling of electron flows from the sheath surrounding high positively biased objects in LEO (Low Earth Orbit) to regions of voltage or shape discontinuity on the biased surfaces. The sheath equations are derived from the Two-fluid, Warm Plasma Model. An equipotential corner and a plane containing strips of alternating voltage bias are treated in two dimensions. A self-consistent field solution of the sheath equations is outlined and is pursued through one cycle. The electron density field is determined by numerical solution of Poisson's equation for the electrostatic potential in the sheath using the NASCAP-LEO relation between electrostatic potential and charge density. Electron flows are calculated numerically from the electron continuity equation. Magnetic field effects are not treated.

  14. Two types of photomultiplier voltage dividers for high and changing count rates

    International Nuclear Information System (INIS)

    Reiter, W.L.; Stengl, G.

    1980-01-01

    We report on the design of two types of voltage distribution circuits for high stability photomultiplier operation. 'Type A' voltage divider is an ohmic voltage divider with high bleeder current (up to 10 mA) and the resistor chain split at one of the last dynodes, usually the dynode where the analog signal is derived from. This simple constructive measure improves the stability of the dynode voltage by a factor of 5 compared with an unsplit conventional resistor chain. 'Type B' is a novel active voltage divider using cold cathode tubes ar regulating elements. This voltage divider exhibits excellent temperature stability (about 10 -4 / 0 C). With 'type B' an equal stability compared with conventional ohmic dividers can be achieved at a bleeder current smaller by one order of magnitude. Of course both concepts, 'type A' and 'type B', can be combined. (orig.)

  15. A Novel Series Connected Batteries State of High Voltage Safety Monitor System for Electric Vehicle Application

    Directory of Open Access Journals (Sweden)

    Qiang Jiaxi

    2013-01-01

    Full Text Available Batteries, as the main or assistant power source of EV (Electric Vehicle, are usually connected in series with high voltage to improve the drivability and energy efficiency. Today, more and more batteries are connected in series with high voltage, if there is any fault in high voltage system (HVS, the consequence is serious and dangerous. Therefore, it is necessary to monitor the electric parameters of HVS to ensure the high voltage safety and protect personal safety. In this study, a high voltage safety monitor system is developed to solve this critical issue. Four key electric parameters including precharge, contact resistance, insulation resistance, and remaining capacity are monitored and analyzed based on the equivalent models presented in this study. The high voltage safety controller which integrates the equivalent models and control strategy is developed. By the help of hardware-in-loop system, the equivalent models integrated in the high voltage safety controller are validated, and the online electric parameters monitor strategy is analyzed and discussed. The test results indicate that the high voltage safety monitor system designed in this paper is suitable for EV application.

  16. 30 CFR 77.802 - Protection of high-voltage circuits; neutral grounding resistors; disconnecting devices.

    Science.gov (United States)

    2010-07-01

    ... AND SURFACE WORK AREAS OF UNDERGROUND COAL MINES Surface High-Voltage Distribution § 77.802 Protection... 30 Mineral Resources 1 2010-07-01 2010-07-01 false Protection of high-voltage circuits; neutral... grounded through a suitable resistor at the source transformers, and a grounding circuit, originating at...

  17. 30 CFR 18.53 - High-voltage longwall mining systems.

    Science.gov (United States)

    2010-07-01

    ...-starter enclosure, with the exception of a controller on a high-voltage shearer, the disconnect device...) shielding between the primary and secondary windings. The shielding must be connected to equipment ground by... with a disconnect device installed to deenergize all high-voltage power conductors extending from the...

  18. A novel series connected batteries state of high voltage safety monitor system for electric vehicle application.

    Science.gov (United States)

    Jiaxi, Qiang; Lin, Yang; Jianhui, He; Qisheng, Zhou

    2013-01-01

    Batteries, as the main or assistant power source of EV (Electric Vehicle), are usually connected in series with high voltage to improve the drivability and energy efficiency. Today, more and more batteries are connected in series with high voltage, if there is any fault in high voltage system (HVS), the consequence is serious and dangerous. Therefore, it is necessary to monitor the electric parameters of HVS to ensure the high voltage safety and protect personal safety. In this study, a high voltage safety monitor system is developed to solve this critical issue. Four key electric parameters including precharge, contact resistance, insulation resistance, and remaining capacity are monitored and analyzed based on the equivalent models presented in this study. The high voltage safety controller which integrates the equivalent models and control strategy is developed. By the help of hardware-in-loop system, the equivalent models integrated in the high voltage safety controller are validated, and the online electric parameters monitor strategy is analyzed and discussed. The test results indicate that the high voltage safety monitor system designed in this paper is suitable for EV application.

  19. 75 FR 17529 - High-Voltage Continuous Mining Machine Standard for Underground Coal Mines

    Science.gov (United States)

    2010-04-06

    ... High-Voltage Continuous Mining Machine Standard for Underground Coal Mines AGENCY: Mine Safety and... of high-voltage continuous mining machines in underground coal mines. It also revises MSHA's design...-- Underground Coal Mines III. Section-by-Section Analysis A. Part 18--Electric Motor-Driven Mine Equipment and...

  20. High voltage bus and auxiliary heater control system for an electric or hybrid vehicle

    Science.gov (United States)

    Murty, Balarama Vempaty

    2000-01-01

    A control system for an electric or hybrid electric vehicle includes a vehicle system controller and a control circuit having an electric immersion heater. The heater is electrically connected to the vehicle's high voltage bus and is thermally coupled to a coolant loop containing a heater core for the vehicle's climate control system. The system controller responds to cabin heat requests from the climate control system by generating a pulse width modulated signal that is used by the control circuit to operate the heater at a duty cycle appropriate for the amount of cabin heating requested. The control system also uses the heater to dissipate excess energy produced by an auxiliary power unit and to provide electric braking when regenerative braking is not desirable and manual braking is not necessary. The control system further utilizes the heater to provide a safe discharge of a bank of energy storage capacitors following disconnection of the battery or one of the high voltage connectors used to transmit high voltage operating power to the various vehicle systems. The control circuit includes a high voltage clamping circuit that monitors the voltage on the bus and operates the heater to clamp down the bus voltage when it exceeds a pre-selected maximum voltage. The control system can also be used to phase in operation of the heater when the bus voltage exceeds a lower threshold voltage and can be used to phase out the auxiliary power unit charging and regenerative braking when the battery becomes fully charged.

  1. Design and Implementation of a High Efficiency, Low Component Voltage Stress, Single-Switch High Step-Up Voltage Converter for Vehicular Green Energy Systems

    Directory of Open Access Journals (Sweden)

    Yu-En Wu

    2016-09-01

    Full Text Available In this study, a novel, non-isolated, cascade-type, single-switch, high step-up DC/DC converter was developed for green energy systems. An integrated coupled inductor and voltage lift circuit were applied to simplify the converter structure and satisfy the requirements of high efficiency and high voltage gain ratios. In addition, the proposed structure is controllable with a single switch, which effectively reduces the circuit cost and simplifies the control circuit. With the leakage inductor energy recovery function and active voltage clamp characteristics being present, the circuit yields optimizable conversion efficiency and low component voltage stress. After the operating principles of the proposed structure and characteristics of a steady-state circuit were analyzed, a converter prototype with 450 W, 40 V of input voltage, 400 V of output voltage, and 95% operating efficiency was fabricated. The Renesas MCU RX62T was employed to control the circuits. Experimental results were analyzed to validate the feasibility and effectiveness of the proposed system.

  2. Characterization of Wet Air Plasma Jet Powered by Sinusoidal High Voltage and Nanosecond Pulses for Plasma Agricultural Application

    Science.gov (United States)

    Takashima, Keisuke; Shimada, Keisuke; Konishi, Hideaki; Kaneko, Toshiro

    2015-09-01

    Not only for the plasma sterilization but also for many of plasma life-science applications, atmospheric pressure plasma devices that allowed us to control its state and reactive species production are deserved to resolve the roles of the chemical species. Influence of the hydroxyl radical and ozone on germination of conidia of a strawberry pathogen is presented. Water addition to air plasma jet significantly improves germination suppression performance, while measured reactive oxygen species (ROS) are reduced. Although the results show a negative correlation between ROS and the germination suppression, this infers the importance of chemical composition generated by plasma. For further control of the plasma product, a plasma jet powered by sinusoidal high voltage and nanosecond pulses is developed and characterized with the voltage-charge Lissajous. Control of breakdown phase and discharge power by pulse-imposed phase is presented. This work is supported by JSPS KAKENHI Grant-in-Aid for Young Scientists (B) Grant Number 15K17480 and Exploratory Research Grant Number 23644199.

  3. Technical and economic aspects of the transmission of energy at extra high voltages

    Energy Technology Data Exchange (ETDEWEB)

    Kahnt, R

    1967-01-01

    The reasons for the employment of higher transmission voltages are listed and the points decisive for the selection of three phase ac or dc systems are reviewed. A treatment of the technical and economic problems arising in three phase extra high voltage transmission is presented. These include selection of voltage, economical design of power lines, insulation problems, power supply dependability, equipment rating and reactive power and stability problems.

  4. The high voltage divider - a tool for comparison of measurement equipment in diagnostic radiology

    International Nuclear Information System (INIS)

    Slavchev, A.; Litchev, A.; Constantinov, B.

    2004-01-01

    The high voltage divider (HVD) is designed for control and analysis of the characteristics of the X-ray generator. The low voltage analogous signals produced by the divider are proportional to the high voltage (kVp) applied to the x-ray tube by a ratio 1:1000 or 1:10000 and can be measured with external test devices like storage oscilloscope (or digital multimeter). The exposure duration and the wave form may be visualized, too. Apart of this invasive way the high voltage also may be measured non-invasively by means of appropriate devices as well as indirectly through calculations. Since the invasive method of measurement with the high voltage divider is distinguished by a high accuracy, it may be utilized as an effective tool for calibration of different devices and for comparison of the measurement methods. (authors)

  5. High-Capacity Cathode Material with High Voltage for Li-Ion Batteries.

    Science.gov (United States)

    Shi, Ji-Lei; Xiao, Dong-Dong; Ge, Mingyuan; Yu, Xiqian; Chu, Yong; Huang, Xiaojing; Zhang, Xu-Dong; Yin, Ya-Xia; Yang, Xiao-Qing; Guo, Yu-Guo; Gu, Lin; Wan, Li-Jun

    2018-03-01

    Electrochemical energy storage devices with a high energy density are an important technology in modern society, especially for electric vehicles. The most effective approach to improve the energy density of batteries is to search for high-capacity electrode materials. According to the concept of energy quality, a high-voltage battery delivers a highly useful energy, thus providing a new insight to improve energy density. Based on this concept, a novel and successful strategy to increase the energy density and energy quality by increasing the discharge voltage of cathode materials and preserving high capacity is proposed. The proposal is realized in high-capacity Li-rich cathode materials. The average discharge voltage is increased from 3.5 to 3.8 V by increasing the nickel content and applying a simple after-treatment, and the specific energy is improved from 912 to 1033 Wh kg -1 . The current work provides an insightful universal principle for developing, designing, and screening electrode materials for high energy density and energy quality. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Superconducting cyclotron deflector conditioning status - an experience with high voltage

    International Nuclear Information System (INIS)

    Ghosh, Subhash; Chattopadhyay, Subrata; Bhattacharjee, Tanushyam; De, Anirban; Paul, Santanu; Pal, Gautam; Saha, Subimal; Mallik, C.; Bhandari, R.K.

    2009-01-01

    In this paper we report about the status of the electrostatic deflector which will be used in K500 superconducting cyclotron at VECC, Kolkata. For extraction of beams from superconducting cyclotron we have to achieve 130 kV/cm. Titanium and tungsten are used for anode and septum respectively. The deflector fits within the median plane of the superconducting magnet. We report here the voltage limit, sparking rates, dark current levels and the effects observed on conditioning. For commissioning of the superconducting cyclotron, the plan is to accelerate Neon beam of 50 MeV/n for which the required extraction voltage is 81 kV/cm and we reached up to 110 kV/cm. The conditioning test chamber is maintained at a pressure of 8.0 x 10 -7 mbar. (author)

  7. Fast turn-off of high voltage 4H–SiC npn BJTs from the saturation on-state regime

    International Nuclear Information System (INIS)

    Ivanov, P A; Levinshtein, M E; Palmour, J W; Agarwal, A K; Zhang, J

    2010-01-01

    Fast turn-off of high-voltage (breakdown voltage ≥ 3 kV) 4H–SiC npn bipolar junction transistors driven in a deeply saturated regime has been reported. In the conventional turn-off mode (base current break), the turn-off delay and current fall times are 80 ns and 100 ns, respectively. It is shown that these times can be made as short as 20 and 4 ns, respectively, if a reverse base current pulse of appropriate amplitude is applied to sweep out minority carriers from the base. The experimental values of delay and turn-off times well coincide with those calculated in terms of the charge control model

  8. Fast Coordinated Control of DFIG Wind Turbine Generators for Low and High Voltage Ride-Through

    Directory of Open Access Journals (Sweden)

    Yun Wang

    2014-06-01

    Full Text Available This paper presents a fast coordinated control scheme of the rotor side converter (RSC, the Direct Current (DC chopper and the grid side converter (GSC of doubly fed induction generator (DFIG wind turbine generators (WTGs to improve the low voltage ride through (LVRT and high voltage ride through (HVRT capability of the DFIG WTGs. The characteristics of DFIG WTGs under voltage sags and swells were studied focusing on the DFIG WTG stator flux and rotor voltages during the transient periods of grid voltage changes. The protection schemes of the rotor crowbar circuit and the DC chopper circuit were proposed considering the characteristics of the DFIG WTGs during voltage changes. The fast coordinated control of RSC and GSC were developed based on the characteristic analysis in order to realize efficient LVRT and HVRT of the DFIG WTGs. The proposed fast coordinated control schemes were verified by time domain simulations using Matlab-Simulink.

  9. X-ray spectral meter of high voltages for X-ray apparatuses

    International Nuclear Information System (INIS)

    Zubkov, I.P.; Larchikov, Yu.V.

    1993-01-01

    Design of the X-ray spectral meter of high voltages (XRSMHV) for medical X-ray apparatuses permitting to conduct the voltage measurements without connection to current circuits. The XRSMHV consists of two main units: the detector unit based on semiconductor detector and the LP4900B multichannel analyzer (Afora, Finland). The XRSMYV was tested using the pilot plant based on RUM-20 X-ray diagnostic apparatus with high-voltage regulator. It was shown that the developed XRSMHV could be certify in the range of high constant voltages form 40 up to 120 kV with the basic relative error limits ±0.15%. The XRSMHV is used at present as the reference means for calibration of high-voltage medical X-ray equipment

  10. Micro controller application as x-ray machine's high voltage controller

    International Nuclear Information System (INIS)

    Wiranto Budi Santoso; Beny Syawaludin

    2010-01-01

    The micro controller application as x-ray machine's high voltage controller has been carried out. The purpose of this micro controller application is to give an accurate high voltage supply to the x-ray tube so that the x ray machine could produce the result as expected. The micro controller based X-ray machine's high voltage controller receives an input voltage from the keypad. This input value is displayed in the LCD (Liquid Crystal Display) screen. Then micro controller uses this input data to drive the stepper motor. The stepper motor adjusts the high voltage auto transformer's output according to the input value. The micro controller is programmed using BASCOM-B051 compiler. The test results show that the stepper motor could rotate according to an input value. (author)

  11. A microcontroller application as X-ray machine's high voltage controller

    International Nuclear Information System (INIS)

    Wiranto Budi Santoso; Beny Syawaludin

    2010-01-01

    A micro controller application as x-ray machine's high voltage controller has been carried out. The purpose of this micro controller application is to give an accurate high voltage supply to the x-ray tube so that the x-ray machine could produce the result as expected. The micro controller based X-ray machine's high voltage controller receives an input voltage from the keypad. This input value is displayed in the LCD (Liquid Crystal Display) screen. Then micro controller uses this input data to drive a stepper motor. The stepper motor adjusts the high voltage auto transformer's output according to the input value. The micro controller is programmed using BASCOM-8051 compiler. The test results show that the stepper motor could rotate according to an input value (author)

  12. Summary of transient high-voltage calculations for the FRX-C experiment

    International Nuclear Information System (INIS)

    Kewish, R.W. Jr.; Rej, D.J.

    1982-06-01

    Calculations of the electrical circuit equations are performed over a wide range of parameters corresponding to the FRX-C field-reversed THETA-pinch experiment at Los Alamos. Without any plasma or external damping, serious voltage doubling and quadrupling of the main capacitor bank charge voltage are observed. These oscillating high voltages are found to be adequately suppressed by the strategic placement of external snubber circuitry. On the other hand, no doubling of the THETA-pinch preionization bank charge voltage is found. Calculations of the equations for the z-pinch preionization circuit are also performed

  13. High Input Voltage Discharge Supply for High Power Hall Thrusters Using Silicon Carbide Devices

    Science.gov (United States)

    Pinero, Luis R.; Scheidegger, Robert J.; Aulsio, Michael V.; Birchenough, Arthur G.

    2014-01-01

    A power processing unit for a 15 kW Hall thruster is under development at NASA Glenn Research Center. The unit produces up to 400 VDC with two parallel 7.5 kW discharge modules that operate from a 300 VDC nominal input voltage. Silicon carbide MOSFETs and diodes were used in this design because they were the best choice to handle the high voltage stress while delivering high efficiency and low specific mass. Efficiencies in excess of 97 percent were demonstrated during integration testing with the NASA-300M 20 kW Hall thruster. Electromagnet, cathode keeper, and heater supplies were also developed and will be integrated with the discharge supply into a vacuum-rated brassboard power processing unit with full flight functionality. This design could be evolved into a flight unit for future missions that requires high power electric propulsion.

  14. Spatial and temporal instabilities in high voltage power devices

    Energy Technology Data Exchange (ETDEWEB)

    Milady, Saeed

    2010-01-29

    Dynamic avalanche can occur during the turn-off process of high voltage bipolar devices, e.g. IGBTs and p{sup +}n{sup -}n{sup +} power diodes, that may result in spatial instabilities of the homogeneous current density distribution across the device and the formation of current filaments. Filaments may cause the destruction of the device, mainly because of the high local temperatures. The first part of this work is dedicated to the current filament behavior. The positive feedback mechanisms caused by the transient current flow through the gate capacitance of an IGBT operating under short circuit conditions may result in oscillations and temporal instabilities of the IGBT current. The oscillations may cause electromagnetic interference (EMI). Furthermore, the positive feedback mechanism may accelerate the over-heating of the device and result in a thermal run-away. This is the subject of the second part of this work. In the first part of this work using the device simulation results of power diodes the underlying physical mechanisms of the filament dynamic is investigated. Simulation results of diode structures with evenly distributed doping inhomogeneities show that, the filament motion gets smoother as the distance between the inhomogeneities decreases. Hopping to faraway inhomogeneities turns into the hopping to neighboring ones and finally a smooth motion. In homogeneous structures the slow inhibitory effect of the electron-hole plasma extraction and the fast activation, due to hole current flowing along the filament, result in a smooth filament motion. An analytical model for the filament velocity under isothermal conditions is presented that can reproduce the simulation data satisfactorily. The influence of the boundary conditions on the filament behavior is discussed. The positive beveled edge termination prohibits a long stay of the filament at the edge reducing the risk of filament pinning. Self-heating effects may turn the initially electrically triggered

  15. Effect of the change in the load resistance on the high voltage pulse transformer of the intense electron-beam accelerators.

    Science.gov (United States)

    Cheng, Xin-bing; Liu, Jin-liang; Qian, Bao-liang; Zhang, Yu; Zhang, Hong-bo

    2009-11-01

    A high voltage pulse transformer (HVPT) is usually used as a charging device for the pulse forming line (PFL) of intense electron-beam accelerators (IEBAs). Insulation of the HVPT is one of the important factors that restrict the development of the HVPT. Until now, considerable effort has been focused on minimizing high field regions to avoid insulation breakdown between windings. Characteristics of the HVPT have been widely discussed to achieve these goals, but the effects of the PFL and load resistance on HVPT are usually neglected. In this paper, a HVPT is used as a charging device for the PFL of an IEBA and the effect of the change in the load resistance on the HVPT of the IEBA is presented. When the load resistance does not match the wave impedance of the PFL, a high-frequency bipolar oscillating voltage will occur, and the amplitude of the oscillating voltage will increase with the decrease in the load resistance. The load resistance approximates to zero and the amplitude of the oscillating voltage is much higher. This makes it easier for surface flashover along the insulation materials to form and decrease the lifetime of the HVPT.

  16. An Integrated Chip High-Voltage Power Receiver for Wireless Biomedical Implants

    Directory of Open Access Journals (Sweden)

    Vijith Vijayakumaran Nair

    2015-06-01

    Full Text Available In near-field wireless-powered biomedical implants, the receiver voltage largely overrides the compliance of low-voltage power receiver systems. To limit the induced voltage, generally, low-voltage topologies utilize limiter circuits, voltage clippers or shunt regulators, which are power-inefficient methods. In order to overcome the voltage limitation and improve power efficiency, we propose an integrated chip high-voltage power receiver based on the step down approach. The topology accommodates voltages as high as 30 V and comprises a high-voltage semi-active rectifier, a voltage reference generator and a series regulator. Further, a battery management circuit that enables safe and reliable implant battery charging based on analog control is proposed and realized. The power receiver is fabricated in 0.35-μm high-voltage Bipolar-CMOS-DMOStechnology based on the LOCOS0.35-μm CMOS process. Measurement results indicate 83.5% power conversion efficiency for a rectifier at 2.1 mA load current. The low drop-out regulator based on the current buffer compensation and buffer impedance attenuation scheme operates with low quiescent current, reduces the power consumption and provides good stability. The topology also provides good power supply rejection, which is adequate for the design application. Measurement results indicate regulator output of 4 ± 0.03 V for input from 5 to 30 V and 10 ± 0.05 V output for input from 11 to 30 V with load current 0.01–100 mA. The charger circuit manages the charging of the Li-ion battery through all if the typical stages of the Li-ion battery charging profile.

  17. Innovation of High Voltage Supply Adjustment Device on Diagnostic X-Ray Machine

    International Nuclear Information System (INIS)

    Sujatno; Wiranto Budi Santoso

    2010-01-01

    Innovation of high voltage supply adjustment device on diagnostic x-ray machine has been carried out. The innovation is conducted by utilizing an electronic circuit as a high voltage adjustment device. Usually a diagnostic x-ray machine utilizes a transformer or an auto-transformer as a high voltage supply adjustment device. A high power diagnostic x-ray machine needs a high power transformer which has big physical dimension. Therefore a box control where the transformer is located has to have big physical dimension. Besides, the price of the transformer is expensive and hardly found in local markets. In this innovation, the transformer is replaced by an electronic circuit. The main component of the electronic circuit is Triac BTA-40. As adjustment device, the triac is controlled by a variable resistor which is coupled by a stepper motor. A step movement of stepper motor varies a value of resistor. The resistor value determines the triac gate voltage. Furthermore the triac will open according to the value of electrical current flowing to the gate. When the gate is open, electrical voltage and current will flow from cathode to anode of the triac. The value of these electrical voltage and current depend on gate open condition. Then this triac output voltage is feed to diagnostic x-ray machine high voltage supply. Therefore the high voltage value of diagnostic x-ray machine is adjusted by the output voltage of the electronic circuit. By using this electronic circuit, the physical dimension of diagnostic x-ray machine box control and the price of the equipment can be reduced. (author)

  18. Theoretical investigation of a photoconductively switched high-voltage spark gap

    NARCIS (Netherlands)

    Broks, B.H.P.; Hendriks, J.; Brok, W.J.M.; Brussaard, G.J.H.; Mullen, van der J.J.A.M.

    2006-01-01

    In this contribution, a photoconductively switched high-voltage spark gap with an emphasis on theswitching behavior is modeled. It is known experimentally that not all of the voltage that is present at the input of the spark gap is switched, but rather a fraction of it drops across the spark gap.

  19. Multi-cell DC-DC converter with high step-down voltage ratio

    NARCIS (Netherlands)

    Tibola, G.; Duarte, J.L.; Blinov, A.

    2015-01-01

    The use of high voltage allows a power processing system to operate with low currents, improving efficiency. Nevertheless, final applications usually require low voltage inlet, which can be provided using modular multilevel converters submodules, for instance. However, every submodule's gate-unit

  20. Synthesis of structure of device for the technical diagnosticating of high-voltage discharge

    OpenAIRE

    Грабко, В. В.; Ковальчук, Венедикт Петрович

    2010-01-01

    The paper presents a device for control of the technical state of high-voltage discharge, which allows, not disconnecting him from power grid, to take into account a size and duration of interconnect current of discharge, and also size of remaining voltage.