WorldWideScience

Sample records for high vacuum sputter

  1. An ion-sputtering gun to clean crystal surfaces in-situ in an ultra-high-vacuum electron microscope

    International Nuclear Information System (INIS)

    Morita, Etsuo; Takayanagi, Kunio; Kobayashi, Kunio; Yagi, Katsumichi; Honjo, Goro

    1980-01-01

    The design and performance of an ion-sputtering gun for cleaning crystal surfaces in-situ in an ultra-high-vacuum electron microscope are reported. The electron microscopic aspects of ion-bombardment damage to ionic magnesium oxide, covalent germanium and silicon, and metallic gold and copper crystals, and the effects of annealing after and during sputtering are described. The growth of various kinds of films deposited in-situ on crystals cleaned by ion-sputtering are described and discussed. (author)

  2. Reducing the impurity incorporation from residual gas by ion bombardment during high vacuum magnetron sputtering

    International Nuclear Information System (INIS)

    Rosen, Johanna; Widenkvist, Erika; Larsson, Karin; Kreissig, Ulrich; Mraz, Stanislav; Martinez, Carlos; Music, Denis; Schneider, J. M.

    2006-01-01

    The influence of ion energy on the hydrogen incorporation has been investigated for alumina thin films, deposited by reactive magnetron sputtering in an Ar/O 2 /H 2 O environment. Ar + with an average kinetic energy of ∼5 eV was determined to be the dominating species in the plasma. The films were analyzed with x-ray diffraction, x-ray photoelectron spectroscopy, and elastic recoil detection analysis, demonstrating evidence for amorphous films with stoichiometric O/Al ratio. As the substrate bias potential was increased from -15 V (floating potential) to -100 V, the hydrogen content decreased by ∼70%, from 9.1 to 2.8 at. %. Based on ab initio calculations, these results may be understood by thermodynamic principles, where a supply of energy enables surface diffusion, H 2 formation, and desorption [Rosen et al., J. Phys.: Condens. Matter 17, L137 (2005)]. These findings are of importance for the understanding of the correlation between ion energy and film composition and also show a pathway to reduce impurity incorporation during film growth in a high vacuum ambient

  3. Growth of high-quality CuInSe sub 2 polycrystalline films by magnetron sputtering and vacuum selenization

    CERN Document Server

    Xie Da Tao; Wang Li; Zhu Feng; Quan Sheng Wen; Meng Tie Jun; Zhang Bao Cheng; Chen J

    2002-01-01

    High-quality CuInSe sub 2 thin films have been prepared using a two stages process. Cu and In were co-deposited onto glass substrates by magnetron sputtering method to produce a predominant Cu sub 1 sub 1 In sub 9 phase. The alloy films were selenised and annealed in vacuum at different temperature in the range of 200-500 degree C using elemental selenium in a closed graphite box. X-ray diffraction and scanning electron microscopy were used to characterize the films. It is found that the polycrystalline and single-phase CuInSe sub 2 films were uniform and densely packed with a grain size of about 3.0 mu m

  4. Thermally induced formation of SiC nanoparticles from Si/C/Si multilayers deposited by ultra-high-vacuum ion beam sputtering

    International Nuclear Information System (INIS)

    Chung, C-K; Wu, B-H

    2006-01-01

    A novel approach for the formation of SiC nanoparticles (np-SiC) is reported. Deposition of Si/C/Si multilayers on Si(100) wafers by ultra-high-vacuum ion beam sputtering was followed by thermal annealing in vacuum for conversion into SiC nanoparticles. The annealing temperature significantly affected the size, density, and distribution of np-SiC. No nanoparticles were formed for multilayers annealed at 500 0 C, while a few particles started to appear when the annealing temperature was increased to 700 0 C. At an annealing temperature of 900 0 C, many small SiC nanoparticles, of several tens of nanometres, surrounding larger submicron ones appeared with a particle density approximately 16 times higher than that observed at 700 0 C. The higher the annealing temperature was, the larger the nanoparticle size, and the higher the density. The higher superheating at 900 0 C increased the amount of stable nuclei, and resulted in a higher particle density compared to that at 700 0 C. These particles grew larger at 900 0 C to reduce the total surface energy of smaller particles due to the higher atomic mobility and growth rate. The increased free energy of stacking defects during particle growth will limit the size of large particles, leaving many smaller particles surrounding the large ones. A mechanism for the np-SiC formation is proposed in this paper

  5. Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation.

    Science.gov (United States)

    Schroeder, J L; Thomson, W; Howard, B; Schell, N; Näslund, L-Å; Rogström, L; Johansson-Jõesaar, M P; Ghafoor, N; Odén, M; Nothnagel, E; Shepard, A; Greer, J; Birch, J

    2015-09-01

    We present an industry-relevant, large-scale, ultra-high vacuum (UHV) magnetron sputtering and cathodic arc deposition system purposefully designed for time-resolved in situ thin film deposition/annealing studies using high-energy (>50 keV), high photon flux (>10(12) ph/s) synchrotron radiation. The high photon flux, combined with a fast-acquisition-time (film formation processes. The high-energy synchrotron-radiation based x-rays result in small scattering angles (industry-relevant processes. We openly encourage the materials research community to contact us for collaborative opportunities using this unique and versatile scientific instrument.

  6. Industry-relevant magnetron sputtering and cathodic arc ultra-high vacuum deposition system for in situ x-ray diffraction studies of thin film growth using high energy synchrotron radiation

    OpenAIRE

    Schroeder, Jeremy; Thomson, W.; Howard, B.; Schell, N.; Näslund, Lars-Åke; Rogström, Lina; Johansson-Jöesaar, Mats P.; Ghafoor, Naureen; Odén, Magnus; Nothnagel, E.; Shepard, A.; Greer, J.; Birch, Jens

    2015-01-01

    We present an industry-relevant, large-scale, ultra-high vacuum (UHV) magnetron sputtering and cathodic arc deposition system purposefully designed for time-resolved in situ thin film deposition/annealing studies using high-energy (greater than50 keV), high photon flux (greater than10(12) ph/s) synchrotron radiation. The high photon flux, combined with a fast-acquisition-time (less than1 s) two-dimensional (2D) detector, permits time-resolved in situ structural analysis of thin film formation...

  7. Investigation of Corrosion Behavior of Ti/TiN Multilayers on Al7075 Deposited by High-Vacuum Magnetron Sputtering in 3.5% NaCl Solution

    Science.gov (United States)

    Molavi, Esfandiar; Shanaghi, Ali; Chu, Paul K.

    2018-04-01

    Although Al 7075 has many favorable mechanical properties such as the large strength-to-weight ratio, the relatively poor corrosion resistance has restricted industrial applications. In this work, Ti/TiN as hard multilayered and nanostructured coatings are deposited on the relatively soft Al 7075 structure by high-vacuum radio-frequency magnetron sputtering and the phase, structure, and morphology are investigated in details. The corrosion behavior is evaluated by electrochemical impedance spectroscopy in 3.5% NaCl at a pH of 7.5 for 1, 6, 12, 24, 36, 48, 60, and 72 h. At time points of 1, 6, 12, and 24 h, primary oxide layers and double layers are formed, but the corrosive medium penetrates the primary titanium nitride columnar structure. At longer time points of 24, 36, 48, 60, and 72 h, formation of stronger oxide and double layers leads to better corrosion resistance which is 14.8 times better than that observed from the uncoated substrate after immersion for 36 h. According to R ct, the corrosion resistances of the short and long immersion groups are 808.5-1984 and 808.5-1248 kΩ cm2, respectively, thereby confirming the effectiveness of the Ti/TiN coating against corrosion in comparison with the corrosion resistance of 84.3 kΩ cm2 observed from the uncoated Al 7075. The smallest corrosion resistance of 808.5 kΩ cm2 observed at the time point of 24 h is 9.6 times that of the uncoated substrate.

  8. Effects of deposition and annealing atmospheres on phase transition of tungsten oxide films grown by ultra-high-vacuum reactive sputtering

    International Nuclear Information System (INIS)

    Ghen, G.S.; Liao, W.L.; Chen, S.T.; Su, W.C.; Lin, C.K.

    2005-01-01

    A series of oxygen-contained tungsten films were grown on Si(100) substrates without intentional heating by ultra-high-vacuum reactive magnetron sputtering at a constant argon pressure (P Ar ) of 1.33 x 10 -1 Pa mixed with a wide range of O 2 partial pressures (P O ) from 1.33 x 10 -4 to 4 x 10 -1 Pa, equivalent to P O -to-P Ar ratios (P O/Ar ) from 1 x 10 -3 to 3. The effect of varying P O/Ar on phase evolution was evaluated by annealing the films in a controlled atmosphere (argon or oxygen) at 500 or 700 deg. C for 1 h. Grazing incident X-ray diffraction and transmission electron microscopy, together with the data of electrical resistivity and deposition rate, reveal that gradually increasing P O/Ar induces a sequence of phase transitions from nanocrystalline β-W(O) (P O/Ar ≤ 0.1), amorphous WO 2 (P O/Ar = 0.6) to amorphous WO 3 (P O/Ar ≥ 2). When annealed in argon atmosphere, the amorphous WO 2 and WO 3 exhibit a very different magnitude of crystallization temperature (T c ) and can be transformed, respectively, into monoclinic WO 2 (T c = 500 deg. C) and tetragonal WO 3 (T c = 700 deg. C). However, the oxidizing atmosphere plays a role to accelerate significantly the crystallization of the amorphous WO 2 into a completely different phase (monoclinic WO 3 ) at a significantly reduced T c of 500 deg. C

  9. High current vacuum closing switch

    International Nuclear Information System (INIS)

    Dolgachev, G.I.; Maslennikov, D.D.; Romanov, A.S.; Ushakov, A.G.

    2005-01-01

    The paper proposes a powerful pulsed closing vacuum switch for high current commutation consisting of series of the vacuum diodes with near 1 mm gaps having closing time determined by the gaps shortening with the near-electrode plasmas [ru

  10. Influence of the sputtering system's vacuum level on the properties of indium tin oxide films

    International Nuclear Information System (INIS)

    Zebaze Kana, M.G.; Centurioni, E.; Iencinella, D.; Summonte, C.

    2006-01-01

    The influence of the chamber residual pressure level in the radio frequency magnetron sputtering process on the electrical, optical and structural properties of indium thin oxide (ITO) is investigated. Several ITO films were deposited at various residual pressure levels on Corning glass using In 2 O 3 :SnO 2 target in argon atmosphere and without the addition of oxygen partial pressure. It is found that a very good vacuum is associated to metallic films and results in less transparent ITO films, with some powder formation on the surface. On the contrary highly transparent and conducting films are produced at a higher residual pressure. The best deposition conditions are addressed for ITO films as transparent conducting oxide layers in silicon heterojunction solar cells. Using the optimal vacuum level for ITO fabrication, a maximum short circuit current of 36.6 mA/cm 2 and a fill-factor of 0.78 are obtained for solar cells on textured substrates with a device conversion efficiency of 16.2%

  11. Ultra high vacuum technology

    CERN Multimedia

    CERN. Geneva

    2001-01-01

    A short introduction for some basic facts and equations. Subsquently, discussion about: Building blocks of an ultrahigh vacuum system - Various types of pumps required to reach uhv and methods to reduce these effects - Outgassing phenomena induced by the presence of a particle beam and the most common methods to reduce these effects It will be given some practical examples from existing CERN accelerators and discuss the novel features of the future LHC vacuum system.

  12. High-power sputtering employed for film deposition

    International Nuclear Information System (INIS)

    Shapovalov, V I

    2017-01-01

    The features of high-power magnetron sputtering employed for the films’ deposition are reviewed. The main physical phenomena accompanying high-power sputtering including ion-electron emission, gas rarefaction, ionization of sputtered atoms, self-sputtering, ion sound waves and the impact of the target heating are described. (paper)

  13. Vacuum Pumping Performance Comparison of Non-Evaporable Getter Thin Films Deposited Using Argon and Krypton as Sputtering Gases

    CERN Document Server

    Liu, Xianghong; He, Yun; Li, Yulin

    2005-01-01

    Owing to the outstanding vacuum performance and the low secondary electron yield, non-evaporable getter (NEG) thin film deposited onto interior walls has gained widespread acceptance and has been incorporated into many accelerator vacuum system designs. The titanium-zirconium-vanadium (T-Zr-V) NEG thin films were deposited onto the interior wall of stainless steel pipes via DC magnetron sputtering method using either argon or krypton gas as sputtering gas. Vacuum pumping evaluation tests were carried out to compare vacuum pumping performances of the Ti-Zr-V NEG thin films deposited using argon or krypton. The results showed much higher initial pumping speed for the Kr-sputtered NEG film than the Ar-sputtered film, though both films have similar activation behavior. The compositions and textures of both thin films were measured to correlate to the pumping performances.

  14. Very low pressure high power impulse triggered magnetron sputtering

    Science.gov (United States)

    Anders, Andre; Andersson, Joakim

    2013-10-29

    A method and apparatus are described for very low pressure high powered magnetron sputtering of a coating onto a substrate. By the method of this invention, both substrate and coating target material are placed into an evacuable chamber, and the chamber pumped to vacuum. Thereafter a series of high impulse voltage pulses are applied to the target. Nearly simultaneously with each pulse, in one embodiment, a small cathodic arc source of the same material as the target is pulsed, triggering a plasma plume proximate to the surface of the target to thereby initiate the magnetron sputtering process. In another embodiment the plasma plume is generated using a pulsed laser aimed to strike an ablation target material positioned near the magnetron target surface.

  15. Ultimate pressures achieved in TiZrV sputter-coated vacuum chambers

    CERN Document Server

    Benvenuti, Cristoforo; Ruzinov, V

    2001-01-01

    Two metre long, cylindrical vacuum chambers of diameter ranging from 34 to 100 mm, coated with TiZrV getter films by sputtering, have been baked for about 24 h at temperatures from 120 to 250 degrees C. The ultimate pressures achieved after bakeout were found to correspond to the ratio of the pressure gauge degassing to the effective pumping speed provided by the chamber at the location of the gauge. The results covering a pressure range from 10/sup -11/ Torr down to 10 /sup -13/ Torr are presented and discussed. (6 refs).

  16. Preheat effect on titanium plate fabricated by sputter-free selective laser melting in vacuum

    Science.gov (United States)

    Sato, Yuji; Tsukamoto, Masahiro; Shobu, Takahisa; Yamashita, Yorihiro; Yamagata, Shuto; Nishi, Takaya; Higashino, Ritsuko; Ohkubo, Tomomasa; Nakano, Hitoshi; Abe, Nobuyuki

    2018-04-01

    The dynamics of titanium (Ti) melted by laser irradiation was investigated in a synchrotron radiation experiment. As an indicator of wettability, the contact angle between a selective laser melting (SLM) baseplate and the molten Ti was measured by synchrotron X-rays at 30 keV during laser irradiation. As the baseplate temperature increased, the contact angle decreased, down to 28° at a baseplate temperature of 500 °C. Based on this result, the influence of wettability of a Ti plate fabricated by SLM in a vacuum was investigated. It was revealed that the improvement of wettability by preheating suppressed sputtering generation, and a surface having a small surface roughness was fabricated by SLM in a vacuum.

  17. Internal Energies of Ion-Sputtered Neutral Tryptophan and Thymine Molecules Determined by Vacuum Ultraviolet Photoionization

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Jia; Takahashi, Lynelle; Wilson, Kevin R.; Leone, Stephen R.; Ahmed, Musahid

    2010-03-11

    Vacuum ultraviolet photoionization coupled to secondary neutral mass spectrometry (VUV-SNMS) of deposited tryptophan and thymine films are performed at the Chemical Dynamics Beamline. The resulting mass spectra show that while the intensity of the VUV-SNMS signal is lower than the corresponding secondary ion mass spectroscopy (SIMS) signal, the mass spectra are significantly simplified in VUV-SNMS. A detailed examination of tryptophan and thymine neutral molecules sputtered by 25 keV Bi3 + indicates that the ion-sputtered parent molecules have ~;;2.5 eV of internal energy. While this internal energy shifts the appearance energy of the photofragment ions for both tryptophan and thymine, it does not change the characteristic photoionizaton efficiency (PIE) curves of thymine versus photon energy. Further analysis of the mass spectral signals indicate that approximately 80 neutral thymine molecules and 400 tryptophan molecules are sputtered per incident Bi3 + ion. The simplified mass spectra and significant characteristic ion contributions to the VUV-SNMS spectra indicate the potential power of the technique for organic molecule surface analysis.

  18. HIGH PRODUCTIVITY VACUUM BLASTING SYSTEM

    International Nuclear Information System (INIS)

    McPhee, William S.

    1999-01-01

    construct a pre-prototype of the nozzle, blast head with wind curtain, sensors, and dust separator and test this system to assess the performance of the new design under controlled conditions at the contractor's facility. In phase III, the Contractor shall design and construct a prototype of the High Productivity Vacuum Blasting System, based on the results of the pre-prototype design and testing performed. This unit will be a full-scale prototype and will be tested at a designated Department of Energy (DOE) facility. Based on the results, the system performance, the productivity, and the economy of the improved vacuum blasting system will be evaluated

  19. HIGH PRODUCTIVITY VACUUM BLASTING SYSTEM

    International Nuclear Information System (INIS)

    McPhee, William S.

    2001-01-01

    The Department of Energy (DOE) needs improved technologies to decontaminate large areas of both concrete and steel surfaces. The technology should have high operational efficiency, minimize exposures to workers, and produce low levels of secondary waste. In order to meet the DOE's needs, an applied research and development project for the improvement of a current decontamination technology, Vacuum Blasting, is proposed. The objective of this project is to improve the productivity and lower the expense of the existing vacuum blasting technology which has been widely used in DOE sites for removing radioactive contamination, PCBs, and lead-based paint. The proposed work would increase the productivity rate and provide safe and cost-effective decontamination of the DOE sites

  20. High-vacuum plasma pump

    International Nuclear Information System (INIS)

    Dorodnov, A.M.; Minajchev, V.E.; Miroshkin, S.I.

    1980-01-01

    The action of an electric-arc high-vacuum pump intended for evacuating the volumes in which the operation processes are followed by a high gas evolution is considered. The operation of the pump is based on the principle of controlling the getter feed according to the gas load and effect of plasma sorbtion pumping. The pump performances are given. The starting pressure is about 5 Pa, the limiting residual pressure is about 5x10 -6 Pa, the pumping out rate of nitrogen in the pressure range 5x10 -5 -5x10 -3 Pa accounts for about 4000 l/s, the power consumption comes to 6 kW. Analyzing the results of the test operation of the pump, it has been concluded that its principal advantages are the high starting pressure, controlled getter feed rate and possibility of pumping out the gases which are usually pumped out with difficulty. The operation reliability of the pump is defined mainly by reliable operation of the ignition system of the vacuum arc [ru

  1. Fusion reactor high vacuum pumping

    International Nuclear Information System (INIS)

    Sedgley, D.W.; Walthers, C.R.; Jenkins, E.M.

    1992-01-01

    This paper reports on recent experiments which have shown the practicality of using activated carbon (coconut charcoal) at 4K to pump helium and hydrogen isotopes for a fusion reactor. Both speed and capacity for deuterium/helium and tritium/helium-3 mixtures were satisfactory. The long-term effects of tritium on the charcoal/cement system developed by Grumman and LLNL was now known; therefore a program was undertaken to see what, if any, effect long-term tritium exposure has on the cryosorber. Several charcoal on aluminum test samples were subjected to six months exposure of tritium at approximately 77 K. The tritium was scanned several times with a residual gas analyzer and the speed-capacity performance of the samples was measured before, approximately one-third way through, and after the exposure. Modest effects were noted which would not seriously restrict the use of charcoal as a cryosorber for fusion reactor high-vacuum pumping applications

  2. Ultra high vacuum systems for accelerators

    International Nuclear Information System (INIS)

    Loefgren, P.

    2001-01-01

    mbar, a combination of pumps is needed. At these low pressures there are, however, some pumps that are disqualified, such as pumps which not are bakable (some cryopumps) and pumps that are using organic fluids for pumping (diffusion pumps) or as lubricants (turbopumps). Instead a combination of pumps like sputter-ion pumps, getter pumps and cryo pumps are routinely used today at accelerator facilities to reach this extreme vacuum regime. In addition to pumping efficiency aspects like operation stability and costs have to be considered when choosing the appropriate pumps for the vacuum system. Even if quite a lot of work has been devoted to develop vacuum gauges for measuring pressures below 10 -11 mbar, only a few commercial gauges are available. It is of great importance that the gauge is capable of measuring without influencing the pressure to be measured, which often is the case. Most gauges used today in this pressure range are improved versions of the old Bayard-Alpert type developed in 1950. Using the storage ring, CRYRING, at the Manne Siegbahn Laboratory in Stockholm Sweden as an example it will be shown how it, with the right combination of vacuum pumps and materials, is possible to reach and keep the pressure below 10 -11 mbar over a long time during an experiment. Since a vacuum system of this type consists of more than just the chamber walls, pumps and gauges there are several other aspects that have to be considered in order to maintain low pressures. Detectors, electric wiring and all kinds of feedthroughs are just a few examples of weak links in the vacuum system. Other issues that will discussed are how to measure pressure when commercial gauges fail and how it is possible to use the background gas in a more constructive way instead of just considering it as a problem. (author)

  3. Vacuum system for applying reflective coatings on large-size optical components using the method of magnetron sputtering

    Science.gov (United States)

    Azerbaev, Alexander A.; Abdulkadyrov, Magomed A.; Belousov, Sergey P.; Ignatov, Aleksandr N.; Mukhammedzyanov, Timur R.

    2016-10-01

    Vacuum system for reflective coatings deposition on large-size optical components up to 4.0 m diameter using the method of magnetron sputtering was built at JSC LZOS. The technological process for deposition of reflective Al coating with protective SiO2 layer was designed and approved. After climatic tests the lifetime of such coating was estimated as 30 years. Uniformity of coating thickness ±5% was achieved on maximum diameter 4.0 m.

  4. High power pulsed magnetron sputtering of transparent conducting oxides

    International Nuclear Information System (INIS)

    Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

    2008-01-01

    High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

  5. Silicates materials of high vacuum technology

    CERN Document Server

    Espe, Werner

    2013-01-01

    Materials of High Vacuum Technology, Volume 2: Silicates covers silicate insulators of special importance to vacuum technology. The book discusses the manufacture, composition, and physical and chemical properties of technical glasses, quartz glass, quartzware, vycor glass, ceramic materials, mica, and asbestos.

  6. Characterization of Niobium Oxide Films Deposited by High Target Utilization Sputter Sources

    International Nuclear Information System (INIS)

    Chow, R; Ellis, A D; Loomis, G E; Rana, S I

    2007-01-01

    High quality, refractory metal, oxide coatings are required in a variety of applications such as laser optics, micro-electronic insulating layers, nano-device structures, electro-optic multilayers, sensors and corrosion barriers. A common oxide deposition technique is reactive sputtering because the kinetic mechanism vaporizes almost any solid material in vacuum. Also, the sputtered molecules have higher energies than those generated from thermal evaporation, and so the condensates are smoother and denser than those from thermally-evaporated films. In the typical sputtering system, target erosion is a factor that drives machine availability. In some situations such as nano-layered capacitors, where the device's performance characteristics depends on thick layers, target life becomes a limiting factor on the maximizing device functionality. The keen interest to increase target utilization in sputtering has been addressed in a variety of ways such as target geometry, rotating magnets, and/or shaped magnet arrays. Also, a recent sputtering system has been developed that generates a high density plasma, directs the plasma beam towards the target in a uniform fashion, and erodes the target in a uniform fashion. The purpose of this paper is to characterize and compare niobia films deposited by two types of high target utilization sputtering sources, a rotating magnetron and a high density plasma source. The oxide of interest in this study is niobia because of its high refractive index. The quality of the niobia films were characterized spectroscopically in optical transmission, ellipsometrically, and chemical stoichiometry with X-ray photo-electron spectroscopy. The refractive index, extinction coefficients, Cauchy constants were derived from the ellipsometric modeling. The mechanical properties of coating density and stress are also determined

  7. Effects of substrate heating and vacuum annealing on optical and electrical properties of alumina-doped ZnO films deposited by DC magnetron sputtering

    Science.gov (United States)

    Tang, Chien-Jen; Wang, Chun-Yuan; Jaing, Cheng-Chung

    2011-10-01

    Alumina-doped zinc oxide (AZO) films have wide range of applications in optical and optoelectronic devices. AZO films have advantage in high transparency, high stability to hydrogen plasma and low cost to alternative ITO film. AZO film was prepared by direct-current (DC) magnetron sputtering from ceramic ZnO:Al2O3 target. The AZO films were compared in two different conditions. The first is substrate heating process, in which AZO film was deposited by different substrate temperature, room temperature, 150 °C and 250 °C. The second is vacuum annealing process, in which AZO film with deposited at room temperature have been annealed at 250 °C and 450 °C in vacuum. The optical properties, electrical properties, grain size and surface structure properties of the films were studied by UV-VIS-NIR spectrophotometer, Hall effect measurement equipment, x-ray diffraction, and scanning electron microscopy. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 1.92×10-3 Ω-cm, 6.38 cm2/Vs, 5.08×1020 #/cm3, and 31.48 nm respectively, in vacuum annealing of 450 °C. The resistivity, carrier mobility, carrier concentration, and grain size of AZO films were 8.72×10-4 Ω-cm, 6.32 cm2/Vs, 1.13×1021 #/cm3, and 31.56 nm, respectively, when substrate temperature was at 250 °C. Substrate heating process is better than vacuum annealed process for AZO film deposited by DC Magnetron Sputtering.

  8. High temperature high vacuum creep testing facilities

    International Nuclear Information System (INIS)

    Matta, M.K.

    1985-01-01

    Creep is the term used to describe time-dependent plastic flow of metals under conditions of constant load or stress at constant high temperature. Creep has an important considerations for materials operating under stresses at high temperatures for long time such as cladding materials, pressure vessels, steam turbines, boilers,...etc. These two creep machines measures the creep of materials and alloys at high temperature under high vacuum at constant stress. By the two chart recorders attached to the system one could register time and temperature versus strain during the test . This report consists of three chapters, chapter I is the introduction, chapter II is the technical description of the creep machines while chapter III discuss some experimental data on the creep behaviour. Of helium implanted stainless steel. 13 fig., 3 tab

  9. High vacuum tribology of polycrystalline diamond coatings

    Indian Academy of Sciences (India)

    Polycrystalline diamond coatings; hot filament CVD; high vacuum tribology. 1. Introduction .... is a characteristic of graphite. We mark the (diamond ... coefficient of friction due to changes in substrate temperature. The average coefficient of.

  10. High Vacuum Techniques for Anionic Polymerization

    KAUST Repository

    Ratkanthwar, Kedar; Hadjichristidis, Nikolaos; Mays, Jimmy

    2015-01-01

    Anionic polymerization high vacuum techniques (HVTs) are the most suitable for the preparation of polymer samples with well-defined complex macromolecular architectures. Though HVTs require glassblowing skill for designing and making polymerization

  11. Ultra-high vacuum technology for accelerators

    CERN Multimedia

    CERN. Geneva. Audiovisual Unit; Hilleret, Noël; Strubin, Pierre M

    2002-01-01

    The lectures will start with a review of the basics of vacuum physics required to build Ultra High Vacuum (UHV) systems, such as static and dynamic outgassing. Before reviewing the various pumping and measurement devices, including the most modern one like Non Evaporable Getter (NEG) coatings, an overview of adequate materials to be used in UHV systems will be given together with their treatment (e.g. cleaning procedures and bake out). Practical examples based on existing or future accelerators will be used to illustrate the topics. Finally, a short overview of modern vacuum controls and interlocks will be given.

  12. High power impulse magnetron sputtering and its applications

    Science.gov (United States)

    Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

    2018-04-01

    High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

  13. High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

    Science.gov (United States)

    Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

    1990-01-01

    Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

  14. Plasma Sputtering Robotic Device for In-Situ Thick Coatings of Long, Small Diameter Vacuum Tubes

    Science.gov (United States)

    Hershcovitch, Ady

    2014-10-01

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed fabricated & operated. Reason for this endeavor is to alleviate the problems of unacceptable ohmic heating of stainless steel vacuum tubes and of electron clouds, due to high secondary electron yield (SEY), in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase cathode lifetime, movable magnet package was developed, and thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced SEY to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that 10 μm Cu coated stainless steel RHIC tube has conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. Device detail and experimental results will be presented. Work supported by Brookhaven Science Associates, LLC under

  15. Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

    Science.gov (United States)

    Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

    2014-08-29

    Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

  16. High resolution, high speed ultrahigh vacuum microscopy

    International Nuclear Information System (INIS)

    Poppa, Helmut

    2004-01-01

    The history and future of transmission electron microscopy (TEM) is discussed as it refers to the eventual development of instruments and techniques applicable to the real time in situ investigation of surface processes with high resolution. To reach this objective, it was necessary to transform conventional high resolution instruments so that an ultrahigh vacuum (UHV) environment at the sample site was created, that access to the sample by various in situ sample modification procedures was provided, and that in situ sample exchanges with other integrated surface analytical systems became possible. Furthermore, high resolution image acquisition systems had to be developed to take advantage of the high speed imaging capabilities of projection imaging microscopes. These changes to conventional electron microscopy and its uses were slowly realized in a few international laboratories over a period of almost 40 years by a relatively small number of researchers crucially interested in advancing the state of the art of electron microscopy and its applications to diverse areas of interest; often concentrating on the nucleation, growth, and properties of thin films on well defined material surfaces. A part of this review is dedicated to the recognition of the major contributions to surface and thin film science by these pioneers. Finally, some of the important current developments in aberration corrected electron optics and eventual adaptations to in situ UHV microscopy are discussed. As a result of all the path breaking developments that have led to today's highly sophisticated UHV-TEM systems, integrated fundamental studies are now possible that combine many traditional surface science approaches. Combined investigations to date have involved in situ and ex situ surface microscopies such as scanning tunneling microscopy/atomic force microscopy, scanning Auger microscopy, and photoemission electron microscopy, and area-integrating techniques such as x-ray photoelectron

  17. Sputtered thin films for high density tape recording

    NARCIS (Netherlands)

    Nguyen, L.T.

    This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

  18. Wear life of sputtered MoSx films extended by high energy ion implantation

    International Nuclear Information System (INIS)

    Okazaki, Yasufumi; Fujiura, Hideo; Nishimura, Makoto

    2000-01-01

    The tribological characteristics of sputtered MoSx films have been reportedly improved by inert gas ion implantation. We tried to extend their wear life by introducing indium, carbon and gallium ion implantation. Pin-on-disk testers were used to measure friction coefficient and wear life in a vacuum, dry and humid air. Comparing with the unimplanted films, we found that the indium ion implanted films showed marked improvement in wear life in a vacuum. Carbon ion implanted films showed improvement in wear life in high humid air. Implantation was effective when it was conducted with maximum concentration at the interface between film and substrate rather than at the neighborhood of the interface inside a film. (author)

  19. Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

    NARCIS (Netherlands)

    Yan, L.T.; Schropp, R.E.I.

    2011-01-01

    Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

  20. Multilayered nanostructured coverings generated by a method of ion beam sputtering in vacuum

    International Nuclear Information System (INIS)

    Il'yushenko, A.F.; Andreev, M.A.; Markova, L.V.; Lisovskaya, Yu. O.

    2013-01-01

    Technological process of the formation of multilayered coverings by ion -beam sputtering is developed. At research of samples by method of AFM it is established, that the heating of a substrate leads to formation of rather large grains up to 100 nanometers in size, consisting of dispersed subgrains in the size 10-25 nanometers. The obtained results allow to say that in the course of formation of coverings interphase borders of section in one layer and section border between coat layers are formed. The use of a method of Electron Backscatter Diffraction Analysis (EBSD) has helped to confirm that the at ion-beam sputtering, ultrafine diamonds remain their diamond-like structure when migrating to the surface of the coating. It is found that with increasing number of monolayers coating microhardness increases. However, this relationship is described by a nonlinear and exponential model. (authors)

  1. Materials for high vacuum technology, an overview

    CERN Document Server

    Sgobba, Stefano

    2007-01-01

    In modern accelerators stringent requirements are placed on materials of vacuum systems. Their physical and mechanical properties, machinability, weldability or brazeability are key parameters. Adequate strength, ductility, magnetic properties at room as well as low temperatures are important factors for vacuum systems of accelerators working at cryogenic temperatures, such as the Large Hadron Collider (LHC) under construction at CERN. In addition, baking or activation of Non-Evaporable Getters (NEG) at high temperatures impose specific choices of material grades of suitable tensile and creep properties in a large temperature range. Today, stainless steels are the dominant materials of vacuum constructions. Their metallurgy is extensively treated. The reasons for specific requirements in terms of metallurgical processes are detailed, in view of obtaining adequate purity, inclusion cleanliness, and fineness of the microstructure. In many cases these requirements are crucial to guarantee the final leak tightnes...

  2. [Applications of self-renewing coatings to improved vacuum materials, hydrogen permeation barriers and sputter-resistant materials

    International Nuclear Information System (INIS)

    1985-01-01

    The phenomena of Gibbsian segregation, radiation-induced segregation and radiation-induced precipitation modify the surface composition and properties of alloys and compounds. In some cases, the change in properties is both substantial and useful, the most notable example being that of stainless steel. When surface-modifying phenomena are investigated as a class, a number of additional materials emerge as candidates for study, having potential applications in a number of technologically important areas. These materials are predicted to produce self-sustaining coatings which provide hydrogen permeation barriers, low-sticking and stimulated desorption coefficients for vacuum applications, and low-Z, sputtering-resistant surfaces for fusion applications. Several examples of each type of material are presented, along with a discussion of the experimental verification of their properties and the status of the corresponding applications development program

  3. Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films.

    Science.gov (United States)

    Aleman, Angel; Li, Chao; Zaid, Hicham; Kindlund, Hanna; Fankhauser, Joshua; Prikhodko, Sergey V; Goorsky, Mark S; Kodambaka, Suneel

    2018-05-01

    Pd(111) thin films, ∼245 nm thick, are deposited on Al 2 O 3 (0001) substrates at ≈0.5 T m , where T m is the Pd melting point, by ultrahigh vacuum dc magnetron sputtering of Pd target in pure Ar discharges. Auger electron spectra and low-energy electron diffraction patterns acquired in situ from the as-deposited samples reveal that the surfaces are compositionally pure 111-oriented Pd. Double-axis x-ray diffraction (XRD) ω-2θ scans show only the set of Pd 111 peaks from the film. In triple-axis high-resolution XRD, the full width at half maximum intensity Γ ω of the Pd 111 ω-rocking curve is 630 arc sec. XRD 111 pole figure obtained from the sample revealed six peaks 60°-apart at a tilt angles corresponding to Pd 111 reflections. XRD ϕ scans show six 60°-rotated 111 peaks of Pd at the same ϕ angles for 11[Formula: see text]3 of Al 2 O 3 based on which the epitaxial crystallographic relationships between the film and the substrate are determined as [Formula: see text]ǁ[Formula: see text] with two in-plane orientations of [Formula: see text]ǁ[Formula: see text] and [Formula: see text]ǁ[Formula: see text]. Using triple axis symmetric and asymmetric reciprocal space maps, interplanar spacings of out-of-plane (111) and in-plane (11[Formula: see text]) are found to be 0.2242 ± 0.0003 and 0.1591 ± 0.0003 nm, respectively. These values are 0.18% lower than 0.2246 nm for (111) and the same, within the measurement uncertainties, as 0.1588 nm for (11[Formula: see text]) calculated from the bulk Pd lattice parameter, suggesting a small out-of-plane compressive strain and an in-plane tensile strain related to the thermal strain upon cooling the sample from the deposition temperature to room temperature. High-resolution cross-sectional transmission electron microscopy coupled with energy dispersive x-ray spectra obtained from the Pd(111)/Al 2 O 3 (0001) samples indicate that the Pd-Al 2 O 3 interfaces are essentially atomically abrupt and

  4. Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

    International Nuclear Information System (INIS)

    Anders, Andre

    2008-01-01

    Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ∼Q 1/2 , whereas the rate normalized to the average power decreases ∼Q -1/2 , with Q being the mean ion charge state number

  5. High-voltage high-current triggering vacuum switch

    International Nuclear Information System (INIS)

    Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

    2012-01-01

    Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

  6. Electronic sputtering by swift highly charged ions of nitrogen on amorphous carbon

    International Nuclear Information System (INIS)

    Caron, M.; Haranger, F.; Rothard, H.; Ban d'Etat, B.; Boduch, P.; Clouvas, A.; Potiriadis, C.; Neugebauer, R.; Jalowy, T.

    2001-01-01

    Electronic sputtering with heavy ions as a function of both electronic energy loss dE/dx and projectile charge state q was studied at the French heavy ion accelerator GANIL. Amorphous carbon (untreated, and sputter-cleaned and subsequently exposed to nitrogen) was irradiated with swift highly charged ions (Z=6-73, q=6-54, energy 6-13 MeV/u) in an ultrahigh vacuum scattering chamber. The fluence dependence of ion-induced electron yields allows to deduce a desorption cross-section σ which varies approximately as σ∼(dE/dx) 1.65 or σ∼q 3.3 for sputter-cleaned amorphous carbon exposed to nitrogen. This q dependence is close to the cubic charge dependence observed for the emission of H + secondary ions which are believed to be emitted from the very surface. However, the power law σ∼(dE/dx) 1.65 , related to the electronic energy loss gives the best empirical description. The dependence on dE/dx is close to a quadratic one thus rather pointing towards a thermal evaporation-like effect

  7. Probing the vacuum with highly charged ions

    International Nuclear Information System (INIS)

    Bottcher, C.; Strayer, M.R.

    1987-01-01

    The physics of the Fermion vacuum is briefly described, and applied to pair production in heavy ion collisions. We consider in turn low energies (<50 MeV/nucleon), intermediate energies (<5 GeV/nucleon), and ultrahigh energies such as would be produced in a ring collider. At high energies, interesting questions of Lorentz and gauge invariance arise. Finally, some applications to the structure of high Z atoms are examined. 14 refs., 11 figs

  8. Specific features of fullerene-bearing thin film growth using ion beam vacuum sputtering of fullerene mixtures with B, Fe, Se, Gd and Na

    International Nuclear Information System (INIS)

    Semenov, A.P.; Semenova, I.A.; Bulina, N.V.; Lopatin, V.A.; Karmanov, N.S.; Churilov, G.N.

    2005-01-01

    A new approach to the growth of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of the doping element introduction between fullerene molecules. The proposed method has been experimentally implemented by using an Ar ion beam to sputter C 60 /C 70 fullerene mixtures, synthesized in a plasmachemical reactor at a pressure of 10 5 Pa and containing a doping element, i.e. Fe, Na, B, Gd or Se. Micron-thick films containing C 60 and C 70 fullerenes and the corresponding dopant element, i.e. Fe, Na, B, Gd or Se, were grown from dopant-containing fullerene mixtures by ion beam sputtering in a vacuum of ∼10 -2 Pa [ru

  9. High temperature superconducting films by rf magnetron sputtering

    International Nuclear Information System (INIS)

    Kadin, A.M.; Ballentine, P.H.

    1989-01-01

    The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

  10. Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

    International Nuclear Information System (INIS)

    Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

  11. High Vacuum Techniques for Anionic Polymerization

    KAUST Repository

    Ratkanthwar, Kedar

    2015-09-01

    Anionic polymerization high vacuum techniques (HVTs) are the most suitable for the preparation of polymer samples with well-defined complex macromolecular architectures. Though HVTs require glassblowing skill for designing and making polymerization reactor, it is the best way to avoid any termination of living polymers during the number of steps for the synthesis of polymers with complex structure. In this chapter, we describe the different polymerization reactors and HVTs for the purification of monomers, solvents, and other reagents for anionic polymerization as well as few model reactions for the synthesis of polymers with simple to complex structure.

  12. Ultra-high vacuum photoelectron linear accelerator

    Science.gov (United States)

    Yu, David U.L.; Luo, Yan

    2013-07-16

    An rf linear accelerator for producing an electron beam. The outer wall of the rf cavity of said linear accelerator being perforated to allow gas inside said rf cavity to flow to a pressure chamber surrounding said rf cavity and having means of ultra high vacuum pumping of the cathode of said rf linear accelerator. Said rf linear accelerator is used to accelerate polarized or unpolarized electrons produced by a photocathode, or to accelerate thermally heated electrons produced by a thermionic cathode, or to accelerate rf heated field emission electrons produced by a field emission cathode.

  13. Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubesa)

    Science.gov (United States)

    Hershcovitch, A.; Blaskiewicz, M.; Brennan, J. M.; Custer, A.; Dingus, A.; Erickson, M.; Fischer, W.; Jamshidi, N.; Laping, R.; Liaw, C.-J.; Meng, W.; Poole, H. J.; Todd, R.

    2015-05-01

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

  14. Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubes

    Energy Technology Data Exchange (ETDEWEB)

    Hershcovitch, A., E-mail: hershcovitch@bnl.gov; Blaskiewicz, M.; Brennan, J. M.; Fischer, W.; Liaw, C.-J.; Meng, W.; Todd, R. [Brookhaven National Laboratory, Upton, New York 11973 (United States); Custer, A.; Dingus, A.; Erickson, M.; Jamshidi, N.; Laping, R.; Poole, H. J. [PVI, Oxnard, California 93031 (United States)

    2015-05-15

    A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

  15. Evolution of sputtered tungsten coatings at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Stelmakh, Veronika; Rinnerbauer, Veronika; Joannopoulos, John D.; Soljačić, Marin; Celanovic, Ivan; Senkevich, Jay J. [Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Tucker, Charles; Ives, Thomas; Shrader, Ronney [Materion Corporation, Buellton, California 93427 (United States)

    2013-11-15

    Sputtered tungsten (W) coatings were investigated as potential high temperature nanophotonic material to replace bulk refractory metal substrates. Of particular interest are materials and coatings for thermophotovoltaic high-temperature energy conversion applications. For such applications, high reflectance of the substrate in the infrared wavelength range is critical in order to reduce losses due to waste heat. Therefore, the reflectance of the sputtered W coatings was characterized and compared at different temperatures. In addition, the microstructural evolution of sputtered W coatings (1 and 5 μm thick) was investigated as a function of anneal temperature from room temperature to 1000 °C. Using in situ x-ray diffraction analysis, the microstrain in the two samples was quantified, ranging from 0.33% to 0.18% for the 1 μm sample and 0.26% to 0.20% for the 5 μm sample, decreasing as the temperature increased. The grain growth could not be as clearly quantified due to the dominating presence of microstrain in both samples but was in the order of 20 to 80 nm for the 1 μm sample and 50 to 100 nm for the 5 μm sample, as deposited. Finally, the 5 μm thick layer was found to be rougher than the 1 μm thick layer, with a lower reflectance at all wavelengths. However, after annealing the 5 μm sample at 900 °C for 1 h, its reflectance exceeded that of the 1 μm sample and approached that of bulk W found in literature. Overall, the results of this study suggest that thick coatings are a promising alternative to bulk substrates as a low cost, easily integrated platform for nanostructured devices for high-temperature applications, if the problem of delamination at high temperature can be overcome.

  16. Procurement specification high vacuum test chamber and pumping system

    International Nuclear Information System (INIS)

    1976-01-01

    The specification establishes requirements for a high-vacuum test chamber, associated vacuum pumps, valves, controls, and instrumentation that shall be designed and fabricated for use as a test chamber for testing a closed loop Brayton Isotope Power System (BIPS) Ground Demonstration System (GDS). The vacuum system shall include all instrumentation required for pressure measurement and control of the vacuum pumping system. A general outline of the BIPS-GDS in the vacuum chamber and the preliminary piping and instrumentation interface to the vacuum chamber are shown

  17. High-coercivity FePt sputtered films

    International Nuclear Information System (INIS)

    Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

    2005-01-01

    Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

  18. Synthesis of nanoparticles using high-pressure sputtering for magnetic domain imaging

    International Nuclear Information System (INIS)

    Shah, Prasanna; Gavrin, A.

    2006-01-01

    We have developed a modified sputtering gun for direct synthesis of metallic nanoparticles, and used this system to produce magnetic domain images using high-resolution Bitter microscopy (HRBM). The nanoparticles are produced at 900 mTorr inside the gun and transported to the main vacuum chamber by the pressure difference between the chamber and the gun interior. Fe particles synthesized using the particle gun have been characterized using X-ray diffraction, atomic force microscopy, and transmission electron microscopy techniques. The particles are 15-30 nm in size with a pure BCC phase. Further, we have deposited these Fe nanoparticles on magnetic recording media and observed the domain patterns using optical microscopy, scanning electron microscopy, and atomic force microscopy. We achieve a spatial resolution of at most 80 nm

  19. Kinetic and Potential Sputtering of Lunar Regolith: The Contribution of the Heavy Highly Charged (Minority) Solar Wind Ions

    Science.gov (United States)

    Meyer, F. W.; Barghouty, A. F.

    2012-01-01

    Solar wind sputtering of the lunar surface helps determine the composition of the lunar exosphere and contributes to surface weathering. To date, only the effects of the two dominant solar wind constituents, H+ and He+, have been considered. The heavier, less abundant solar wind constituents have much larger sputtering yields because they have greater mass (kinetic sputtering) and they are highly charged (potential sputtering) Their contribution to total sputtering can therefore be orders of magnitude larger than their relative abundances would suggest

  20. Application of high speed photography for high current vacuum arcs

    NARCIS (Netherlands)

    Damstra, G.C.; Merck, W.F.H.; Vossen, J.W.G.L.; Janssen, M.F.P.; Bouwmeester, C.E.

    1998-01-01

    A high speed image detection system for 106 frames per second or 107 streaks per second has been developed for the testing of vacuum circuit breakers, using 10×16 optical fibres for light transfer to 160 fast photo diodes. The output of these diodes is multiplexed, AD converted in a 4 bit

  1. Surface sputtering in high-dose Fe ion implanted Si

    International Nuclear Information System (INIS)

    Ishimaru, Manabu

    2007-01-01

    Microstructures and elemental distributions in high-dose Fe ion implanted Si were characterized by means of transmission electron microscopy and Rutherford backscattering spectroscopy. Single crystalline Si(0 0 1) substrates were implanted at 350 deg. C with 120 keV Fe ions to fluences ranging from 0.1 x 10 17 to 4.0 x 10 17 /cm 2 . Extensive damage induced by ion implantation was observed inside the substrate below 1.0 x 10 17 /cm 2 , while a continuous iron silicide layer was formed at 4.0 x 10 17 /cm 2 . It was found that the spatial distribution of Fe projectiles drastically changes at the fluence between 1.0 x 10 17 and 4.0 x 10 17 /cm 2 due to surface sputtering during implantation

  2. FY1995 study to create the high density magnetic recording devices by using an ultra clean sputtering process; 1995 nendo choseijo sputter process ni yoru chokomitsudo jiki kiroku device no sosei

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    1997-03-01

    It is important to control microstructure of thin film magnetic devices such as recording heads and media, in order to induce excellent magnetic properties. Since the impurities in the sputtering atmosphere is easily thought to affect strongly on the initial film growth, we will develop the highly purified sputtering atmosphere to establish a fabrication technology of ultra thin metallic films with desirable microstructure. A specialized multi-sputtering system which has extremely clean atmosphere (impurity level: 1/10000 compared to conventional systems) were realized by (a) decreasing out-gassing rate from vacuum chamber, pumping system, cathode, robot, etc. and (b) using ultra-clean processing gas. The base pressure was 8 x 10{sup -12} Torr (XHV) and the build-up rate was less than 1 x 10{sup -8} Torrl/sec. From the correlation between the microstructure and magnetic properties of a part of spin-valve GMR films, the guiding principle for the microstructural design were clarified to induce the exchange coupling effectively at the ferro/antiferromagnetic interface and to enhance the GMR effect at the magnetic/non-magnetic interface. The mechanism of' Cr segregation on the grain boundaries was clarified, in thin film media deposited under ultra clean sputtering process. The material specification of the magnetic ultra thin film media for high density recording with low media noise were designed from view of the thermal agitation. (NEDO)

  3. Modification of Ultra-High Vacuum Surfaces Using Free Radicals

    CERN Document Server

    Vorlaufer, G

    2002-01-01

    In ultra-high vacuum systems outgassing from vacuum chamber walls and desorption of surface adsorbates are usually the factors which determine pressure and residual gas composition. In particular in beam vacuum systems of accelerators like the LHC, where surfaces are exposed to intense synchrotron radiation and bombardment by energetic ions and electrons, surface properties like the molecular desorption yield or secondary electron yield can strongly influence the performance of the accelerator. Well-established treatment methods like vacuum bake-out or glow-discharge cleaning have been successfully applied in the past to condition ultra-high vacuum surfaces, but these methods are sometimes difficult to carry out, for example if the vacuum chambers are not accessible. In this work, an alternative treatment method is investigated. This method is based on the strong chemical reactivity of free radicals, electrically neutral fragments of molecules. Free radicals (in the case of this work, nitrogen and oxygen radi...

  4. Internal motion in high vacuum systems

    Science.gov (United States)

    Frank, J. M.

    Three transfer and positioning mechanisms have been developed for the non-air exposed, multistep processing of components in vacuum chambers. The functions to be performed in all of the systems include ultraviolet/ozone cleaning, vacuum baking, deposition of thin films, and thermocompression sealing of the enclosures. Precise positioning of the components is required during the evaporation and sealing processes. The three methods of transporting and positioning the components were developed to accommodate the design criteria and goals of each individual system. The design philosophy, goals, and operation of the three mechanisms are discussed.

  5. Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

    Energy Technology Data Exchange (ETDEWEB)

    Anders, Andre

    2009-11-22

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

  6. Deposition rates of high power impulse magnetron sputtering: Physics and economics

    International Nuclear Information System (INIS)

    Anders, Andre

    2010-01-01

    Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

  7. Application of high power microwave vacuum electron devices

    International Nuclear Information System (INIS)

    Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

    2011-01-01

    High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

  8. Domino Platform: PVD Coaters for Arc Evaporation and High Current Pulsed Magnetron Sputtering

    International Nuclear Information System (INIS)

    Vetter, J; Müller, J; Erkens, G

    2012-01-01

    AlTiN and CrN coatings were deposited in hybrid DOMINO platforms by magnetron sputtering (DC-MS, DC-MS+HCP-MS, HCP-MS) and vacuum arc evaporation. The ion cleaning was done by the AEGD process. The coating rates and the energy efficiency of both deposition processes were compared. The roughness effects of the different coating types were discussed. Preliminary results of the change of pulse characteristics during simultaneously running of HCP-MS plus vacuum arc evaporation are shown.

  9. Vacuum amplification of the high-frequency electromagnetic radiation

    OpenAIRE

    Vilkovisky, G. A.

    1998-01-01

    When an electrically charged source is capable of both emitting the electromagnetic waves and creating charged particles from the vacuum, its radiation gets so much amplified that only the backreaction of the vacuum makes it finite. The released energy and charge are calculated in the high-frequency approximation. The technique of expectation values is advanced and employed.

  10. Sputtering yields of carbon based materials under high particle flux with low energy

    Science.gov (United States)

    Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

    1995-04-01

    A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

  11. Sputtering yields of carbon based materials under high particle flux with low energy

    International Nuclear Information System (INIS)

    Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

    1995-01-01

    A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 similar 7x10 20 /m 2 s at 50 similar 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 similar 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam. ((orig.))

  12. Novel magnetic controlled plasma sputtering method

    International Nuclear Information System (INIS)

    Axelevich, A.; Rabinovich, E.; Golan, G.

    1996-01-01

    A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

  13. Highly aligned carbon nanotube arrays fabricated by bias sputtering

    International Nuclear Information System (INIS)

    Hayashi, Nobuyuki; Honda, Shin-ichi; Tsuji, Keita; Lee, Kuei-Yi; Ikuno, Takashi; Fujimoto, Keiichi; Ohkura, Shigeharu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

    2003-01-01

    Vertically aligned carbon nanotube (CNT) arrays have been successfully grown on Si substrates by dc bias sputtering. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the resultant arrays consisted of dense CNTs with diameters of 40-60 nm and lengths of 300-400 nm. The CNTs were found to have a bamboo-like structure at the end of which metallic nanoparticle was formed, indicating tip growth mechanism. The energy enhancement of carbon particles is a key factor for synthesis of CNTs using dc bias sputtering system

  14. The measurement of vacuum at high voltage terminal of the FOTIA facility at BARC

    International Nuclear Information System (INIS)

    Kansara, M.J.; Sapna, P.; Subrahmanyam, N.B.V.; Bhatt, J.P.; Gupta, S.K.; Singh, P.

    2003-01-01

    Full text: In FOTIA, the ion beams accelerated by the low energy tube are injected into the high-energy accelerating tube using the 180 deg folding magnet. In order to have maximum transmission through the magnet chamber the vacuum in this section should be in the range of 10 -8 Torr. The chamber is very narrow (14 mm x 24 mm) and offers low conductance to the vacuum system. For maintaining the required UHV inside this chamber and associated beam lines inside the high voltage terminal at 6 MV, a sputter ion pump (120 litres/sec) is used. However, the control of the ion pump and measurement of the vacuum in the chamber has to be done from the control consol located at ground potential. This has been accomplished through a fibre optic data telemetry system, which offers electrical isolation of 6 MV. This fibre optic system is integrated to the main control system of the FOTIA. For controlling and monitoring the ion pump DOUT and ADC modules of the CAMAC system are used to provide interfacing signals to the fibre optic system. For the measurement of the vacuum, the gauge output provided by the ion pump is converted to a suitable light signal (1 kHz to 10 kHz) and is transmitted to the fibre optic link box (located at ground). At ground level this light signal is converted back to a voltage signal and transmitted to ADC module of the CAMAC system. This voltage signal is calibrated against the vacuum measured in the terminal, which is available in the control room via computer connected to the CAMAC system. In this paper, details of the above system will be presented

  15. Ion-induced sputtering

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

    1983-01-01

    The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

  16. Quartz crystal microbalance-based system for high-sensitivity differential sputter yield measurements

    International Nuclear Information System (INIS)

    Rubin, B.; Topper, J. L.; Farnell, C. C.; Yalin, A. P.

    2009-01-01

    We present a quartz crystal microbalance-based system for high sensitivity differential sputter yield measurements of different target materials due to ion bombardment. The differential sputter yields can be integrated to find total yields. Possible ion beam conditions include ion energies in the range of 30-350 eV and incidence angles of 0 deg. - 70 deg. from normal. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (<100 eV) and a two-grid ion optics is used for higher energies (up to 750 eV). A complementary weight loss approach is also used to measure total sputter yields. Validation experiments are presented that confirm high sensitivity and accuracy of sputter yield measurements.

  17. Effect of stress, strain and optical properties in vacuum and normal annealed ZnO thin films using RF magnetron sputtering

    Science.gov (United States)

    Kumar, B. Santhosh; Purvaja, K.; Harinee, N.; Venkateswaran, C.

    2018-05-01

    Zinc oxide thin films have been deposited on quartz substrate using RF magnetron sputtering. The deposited films were subjected to different annealing atmosphere at a fixed temperature of 500 °C for 5h. The X-ray diffraction (XRD) patterns reveals the shift in the peak of both normal annealed and vacuum annealed thin films when compared to as-deposited ZnO film. The crystallite size, intrinsic stress and other parameters were calculated from XRD data. The surface morphology of the obtained films were studied using Atomic force microscopy (AFM). From Uv-Visible spectroscopy, the peak at 374 nm of all the films is characteristics of ZnO. The structural, thermal stability and optical properties of the annealed ZnO films are discussed in detail.

  18. High-speed deposition of protective films of aluminium oxide by the method of reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Bugaev, S.P.; Zakhrov, A.N.; Ladyzhenskii, O.P.; Sochugov, M.S.

    2001-01-01

    The high optical characteristics of aluminium films made them attractive for different functional and decorative applications. It is well-known that the corrosion resistance of alloying is determined by the presence of the oxide film on its surface, but on the aluminium films, deposited by vacuum methods, the resistance is extremely low resulting in the relatively rapid failure of the coating. At present, there is a large number of methods of depositing the films of aluminium oxide. In most cases, it is recommended to use reactive magnetron sputtering of an aluminium target in a magnetron spraying system (MSS) using direct current, on dispersion of the target of aluminium oxide in a high-frequency MSS

  19. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output

  20. Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

    Science.gov (United States)

    Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

    1994-01-01

    The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

  1. A transparent vacuum window for high-intensity pulsed beams

    CERN Document Server

    Monteil, M; Veness, R

    2011-01-01

    The HiRadMat (High-Radiation to Materials) facility Ill will allow testing of accelerator components, in particular those of the Large Hadron Collider (LHC) at CERN, under the impact of high-intensity pulsed beams. To reach this intensity range, the beam will be focused on a focal point where the target to be tested is located. A 60 mm aperture vacuum window will separate the vacuum of the beam line which is kept under high vacuum 10(-8) mbar, from the test area which is at atmospheric pressure. This window has to resist collapse due to beam passage. The high-intensity of the beam means that typical materials used for standard vacuum windows (such as stainless steel, aluminium and titanium alloy) cannot endure the energy deposition induced by the beam passage. Therefore, a vacuum window has been designed to maintain the differential pressure whilst resisting collapse due to the beam impact on the window. In this paper, we will present calculations of the energy transfer from beam to window, the design of the ...

  2. Multistage charged particle accelerator, with high-vacuum insulation

    International Nuclear Information System (INIS)

    Holl, P.

    1976-01-01

    A multistage charged-particle accelerator for operating with accelerating voltages higher than 150 kV is described. The device consists essentially of a high-voltage insulator, a source for producing charged particles, a Wehnelt cylinder, an anode, and a post-accelerating tube containing stack-wise positioned post-accelerating electrodes. A high vacuum is used for insulating the parts carrying the high voltages, and at least one cylindrical screen surrounding these parts is interposed between them and the vacuum vessel, which can itself also function as a cylindrical screen

  3. Selection and evaluation of an ultra high vacuum gate valve for Isabelle beam line vacuum system

    International Nuclear Information System (INIS)

    Foerster, C.L.; McCafferty, D.

    1980-01-01

    A minimum of eighty-four (84) Ultra High Vacuum Gate Valves will be utilized in ISABELLE to protect proton beam lines from catastrophic vacuum failure and to provide sector isolation for maintenance requirements. The valve to be selected must function at less than 1 x 10 -11 Torr pressure and be bakeable to 300 0 C in its open or closed position. In the open position, the valve must have an RF shield to make the beam line walls appear continuous. Several proposed designs were built and evaluated. The evaluation consisted mainly of leak testing, life tests, thermal cycling, mass spectrometer analysis, and 10 -12 Torr operation. Problems with initial design and fabrication were resolved. Special requirements for design and construction were developed. This paper describes the tests on two final prototypes which appear to be the best candidates for ISABELLE operation

  4. Sputter deposited titanium disilicide at high substrate temperatures

    Science.gov (United States)

    Tanielian, M.; Blackstone, S.; Lajos, R.

    1984-08-01

    Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

  5. Decay rate of the false vacuum at high temperatures

    International Nuclear Information System (INIS)

    Eboli, O.J.P.; Marques, G.C.

    1986-01-01

    We investigate, within the semiclassical approach, the high temperature behaviour of the decay rate (Γ) of the metastable vacuum in Field Theory. We exhibit some exactly soluble (1+1) and (3+1) dimensional examples and develop a formal expression for γ in the high temperature limit. (Author) [pt

  6. Results of Monte-Carlo studies on backscattering and sputtering from 'pocket' and 'finned' structures

    International Nuclear Information System (INIS)

    Brown, K.P.

    1978-01-01

    A Monte-Carlo computer program which has been developed for studying backscattering and sputtering processes involving high energy particles in complex vacuum structures has been used to show that useful reductions in backscattering and sputtering can be achieved by pocketing or finning the wall surfaces of plasma containment vessels. (author)

  7. Characterization of selective solar absorber under high vacuum.

    Science.gov (United States)

    Russo, Roberto; Monti, Matteo; di Giamberardino, Francesco; Palmieri, Vittorio G

    2018-05-14

    Total absorption and emission coefficients of selective solar absorbers are measured under high vacuum conditions from room temperature up to stagnation temperature. The sample under investigation is illuminated under vacuum @1000W/m 2 and the sample temperature is recorded during heat up, equilibrium and cool down. During stagnation, the absorber temperature exceeds 300°C without concentration. Data analysis allows evaluating the solar absorptance and thermal emittance at different temperatures. These in turn are useful to predict evacuated solar panel performances at operating conditions.

  8. Vacuum surface flashover and high pressure gas streamers

    International Nuclear Information System (INIS)

    Elizondo, J.M.; Krogh, M.L.; Smith, D.; Stolz, D.; Wright, S.N.

    1997-07-01

    Pre-breakdown current traces obtained during high pressure gas breakdown and vacuum surface flashover show similar signatures. The initial pre-breakdown current spike, a flat constant current phase, and the breakdown phase with voltage collapse and current surge differ mostly in magnitude. Given these similarities, a model, consisting of the initial current spike corresponding to a fast precursor streamer (ionization wave led by a photoionizing front), the flat current stage as the heating or glow phase, and the terminal avalanche and gap closure, is applied to vacuum surface flashover. A simple analytical approximation based on the resistivity changes induced in the vacuum and dielectric surface is presented. The approximation yields an excellent fit to pre-breakdown time delay vs applied field for previously published experimental data. A detailed kinetics model that includes surface and gas contributions is being developed based in the initial approximation

  9. Evaluation of ISABELLE full cell ultra high vacuum system

    International Nuclear Information System (INIS)

    Foerster, C.L.; Briggs, J.; Chou, T.S.; Stattel, P.

    1980-01-01

    The ISABELLE Full Cell Vacuum System consisting of a 40 m long, by 8.8 cm diameter stainless steel tube pumped by seven pumping stations was assembled and processed for 10 -12 Torr operation. Evaluation and testing of the system and its sub-assemblies has been completed. Detail design of system components and the determination of the conditioning process was completed. The best procedure to rough pump, leak test, vacuum bake the system, condition pumps, degas gauges, turn on ion pumps and flash sublimation pumps was established. Pressures below 2 x 10 -11 Torr are now routinely achieved in normal operation of the Full Cell. This includes pump down after replacement of various components and pump down after back fill with moist unfiltered air. The techniques developed for the Full Cell will be used to build the ISABELLE Ultra High Vacuum System

  10. Targets on the basis of ferrites and high-temperature superconductors for ion-plasma sputtering

    International Nuclear Information System (INIS)

    Lepeshev, A.A.; Saunin, V.N.; Telegin, S.V.; Polyakova, K.P.; Seredkin, V.A.; Pol'skij, A.I.

    2000-01-01

    Paper describes a method to produce targets for ion-plasma sputtering using plasma splaying of the appropriate powders on a cooled metal basis. Application of the plasma process was demonstrated to enable to produce complex shaped targets under the controlled atmosphere on the basis of ceramic materials ensuring their high composition homogeneity, as well as, reliable mechanical and thermal contact of the resultant coating with the base. One carried out experiments in ion-plasma sputtering of targets to prepare ferrite polycrystalline films to be used in magnetooptics and to prepare high-temperature superconductor epitaxial films [ru

  11. Observing Planets and Small Bodies in Sputtered High Energy Atom (SHEA) Fluxes

    Science.gov (United States)

    Milillo, A.; Orsini, S.; Hsieh, K. C.; Baragiola, R.; Fama, M.; Johnson, R.; Mura, A.; Plainaki, Ch.; Sarantos, M.; Cassidy, T. A.; hide

    2012-01-01

    The evolution of the surfaces of bodies unprotected by either strong magnetic fields or thick atmospheres in the Solar System is caused by various processes, induced by photons, energetic ions and micrometeoroids. Among these processes, the continuous bombardment of the solar wind or energetic magnetospheric ions onto the bodies may significantly affect their surfaces, with implications for their evolution. Ion precipitation produces neutral atom releases into the exosphere through ion sputtering, with velocity distribution extending well above the particle escape limits. We refer to this component of the surface ejecta as sputtered high-energy atoms (SHEA). The use of ion sputtering emission for studying the interaction of exposed bodies (EB) with ion environments is described here. Remote sensing in SHEA in the vicinity of EB can provide mapping of the bodies exposed to ion sputtering action with temporal and mass resolution. This paper speculates on the possibility of performing remote sensing of exposed bodies using SHEA The evolution of the surfaces of bodies unprotected by either strong magnetic fields or thick atmospheres in the Solar System is caused by various processes, induced by photons, energetic ions and micrometeoroids. Among these processes, the continuous bombardment of the solar wind or energetic magnetospheric ions onto the bodies may significantly affect their surfaces, with implications for their evolution. Ion precipitation produces neutral atom releases into the exosphere through ion sputtering, with velocity distribution extending well above the particle escape limits. We refer to this component of the surface ejecta as sputtered high-energy atoms (SHEA). The use of ion sputtering emission for studying the interaction of exposed bodies (EB) with ion environments is described here. Remote sensing in SHEA in the vicinity of EB can provide mapping of the bodies exposed to ion sputtering action with temporal and mass resolution. This paper

  12. Vacuum system for HIMAC synchrotrons

    International Nuclear Information System (INIS)

    Kanazawa, M.; Sudou, M.; Sato, K.

    1994-01-01

    HIMAC synchrotrons are now under construction, which require vacuum chambers of large aperture and high vacuum of about 10 -9 torr. Wide thin wall vacuum chamber of 0.3 mm thickness reinforced with ribs has been developed as the chamber at dipole magnet. We have just now started to evacuate the lower ring. The obtained average value was about 5x10 -8 torr with turbo-molecular and sputter ion pumps, and 1.1x10 -9 torr after baking. (author)

  13. Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

    International Nuclear Information System (INIS)

    Horstmann, F.; Sittinger, V.; Szyszka, B.

    2009-01-01

    In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

  14. High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

    International Nuclear Information System (INIS)

    Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

    1982-01-01

    Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H 2 of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H 2 in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H 2 increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H 2 mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H 2 atmosphere in the same apparatus. (author)

  15. High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

    Energy Technology Data Exchange (ETDEWEB)

    Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

    1982-08-01

    Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H/sub 2/ of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H/sub 2/ in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H/sub 2/ increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H/sub 2/ mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H/sub 2/ atmosphere in the same apparatus.

  16. Strong charge state dependence of H+ and H2+ sputtering induced by slow highly charged ions

    International Nuclear Information System (INIS)

    Kakutani, N.; Azuma, T.; Yamazaki, Y.; Komaki, K.; Kuroki, K.

    1995-01-01

    Secondary ion emission has been studied for very slow ( similar 0.01ν B ) highly charged Ar and N ions bombarding C 60 containing hydrogen as an impurity. It is found that the fragmentations of C 60 are very rare even for Ar 16+ bombardments. On the other hand, the sputtering of H + and H 2 + has been observed to increase drastically as a function of incident charge q like q γ (e.g., γ similar 4.6 for H + sputtering by 500 eV Ar q+ ). (orig.)

  17. A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

    Energy Technology Data Exchange (ETDEWEB)

    Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

    1990-01-01

    The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

  18. Decay rate of the false vacuum at high tempratures

    International Nuclear Information System (INIS)

    Eboli, O.J.P.; Marques, G.C.

    1984-01-01

    Within the semiclassical approach, the high temperaure behaviour of the decay rate of the metastable vacuum in Field Theory is investigated. It is shown that, contrarily to what has been proposed in the literature, the pre-exponential factor exhibits a nontrivial dependence on the temperature. Furthermore, this dependence is such that at very high temperatures it is as important as the exponential factor and consequently it spoils many conclusions drawn up to now on Cosmological Phase Transitions. (Author) [pt

  19. High frequency pulse anodising of magnetron sputtered Al–Zr and Al–Ti Coatings

    DEFF Research Database (Denmark)

    Gudla, Visweswara Chakravarthy; Bordo, Kirill; Engberg, Sara

    2016-01-01

    High frequency pulse anodising of Al–Zr and Al–Ti coatings is studied as a surface finishing technique and compared to conventional decorative DC anodising. The Al–Zr and Al–Ti coatings were deposited using DC magnetron sputtering and were heat treated after deposition to generate a multiphase mi...

  20. Growth and characterization of high quality ZnS thin films by RF sputtering

    Science.gov (United States)

    Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

    2012-06-01

    High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

  1. Extremely-high vacuum pressure measurement by laser ionization

    International Nuclear Information System (INIS)

    Kokubun, Kiyohide

    1991-01-01

    Laser ionization method has the very high sensitivity for detecting atoms and molecules. Hurst et al. successfully detected a single Cs atom by means of resonance ionization spectroscopy developed by them. Noting this high sensitivity, the authors have attempted to apply the laser ionization method to measure gas pressure, particularly in the range down to extremely high vacuum. At present, hot cathode ionization gauges are used for measuring gas pressure down to ultrahigh vacuum, however, those have a number of disadvantages. The pressure measurement using lasers does not have such disadvantages. The pressure measurement utilizing the laser ionization method is based on the principle that when laser beam is focused through a lens, the amount of atom or molecule ions generated in the focused space region is proportional to gas pressure. In this paper, the experimental results are presented on the nonresonant multiphoton ionization characteristics of various kinds of gases, the ion detection system with high sensitivity and an extremely high vacuum system prepared for the laser ionization experiment. (K.I.)

  2. Functional aluminum alloys for ultra high vacuum use

    International Nuclear Information System (INIS)

    Kato, Yutaka; Tsukamoto, Kenji; Isoyama, Eizo

    1985-01-01

    Ultra high vacuum systems made of aluminum alloys are actively developed. The reasons for using aluminum alloys are low residual radioactivity, light weight, good machinability, good thermal conductivity, non-magnetism. The important function required for ultra high vacuum materials is low outgassing rate, but surface gas on ordinary aluminum is much. Then the research on aluminum surface structure with low outgassing rate has been made and the special extrusion method, that is, extrusion method with the conditions of preventing air from entering inside of pipe and of taking in mixture gas of Ar + O 2 , was developed. 6063 alloy obtained by special extrusion method showed low outgassing rate (2 x 10 -13 Torr. 1/s. cm 2 ) by only 150 deg C, 24 h baking. For the future it will be important to develop aluminum alloys with low dynamic outgassing rate as well as low static outgassing rate. (author)

  3. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  4. Application of high rate magnetron sputtering to the fabrication of A-15 compounds

    International Nuclear Information System (INIS)

    Kampwirth, R.T.; Hafstrom, J.W.; Wu, C.T.

    1976-01-01

    High quality Nb 3 Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 μm/min. at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3 0 K, J/sub c/(O)'s of 15 x 10 6 A/cm 2 and Hc 2 as high as 240 kOe have been achieved in 1-3 μm films deposited from a Nb 3 Sn reacted powder target with substrate temperatures between 600 and 800 0 C. The films exhibit smooth surfaces and, generally, a [200] preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to film structure T/sub c/ and J/sub c/(H,T) and the Nb/Sn ratio as determined by Rutherford backscattering

  5. Understanding deposition rate loss in high power impulse magnetron sputtering: I. Ionization-driven electric fields

    International Nuclear Information System (INIS)

    Brenning, N; Huo, C; Raadu, M A; Lundin, D; Helmersson, U; Vitelaru, C; Stancu, G D; Minea, T

    2012-01-01

    The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared with direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target due to a substantial negative potential profile, sometimes called an extended presheath, from the location of ionization toward the cathode. Recent studies in HiPIMS devices, using floating-emitting and swept-Langmuir probes, show that such extended potential profiles do exist, and that the electric fields E z directed toward the target can be strong enough to seriously reduce ion transport to the substrate. However, they also show that the potential drops involved can vary by up to an order of magnitude from case to case. There is a clear need to understand the underlying mechanisms and identify the key discharge variables that can be used for minimizing the back-attraction. We here present a combined theoretical and experimental analysis of the problem of electric fields E z in the ionization region part of HiPIMS discharges, and their effect on the transport of ionized sputtered material. In particular, we have investigated the possibility of a ‘sweet spot’ in parameter space in which the back-attraction of ionized sputtered material is low. It is concluded that a sweet spot might possibly exist for some carefully optimized discharges, but probably in a rather narrow window of parameters. As a measure of how far a discharge is from such a window, a Townsend product Π Townsend is proposed. A parametric analysis of Π Townsend shows that the search for a sweet spot is complicated by the fact that contradictory demands appear for several of the externally controllable parameters such as high/low working gas pressure, short/long pulse length, high/low pulse power and high/low magnetic field strength. (paper)

  6. Vacuum improvements for ultra high charge state ion acceleration

    International Nuclear Information System (INIS)

    Xie, Z.Q.; Lyneis, C.M.; Clark, D.J.; Guy, A.; Lundgren, S.A

    1998-06-01

    The installation of a second cryo panel has significantly improved the vacuum in the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory. The neutral pressure in the extraction region decreased from 1.2 x 10 -6 down to about 7 x 10 -7 Torr. The vacuum improvement reduces beam loss from charge changing collisions and enhances the cyclotron beam transmission, especially for the high charge state heavy ions. Tests with improved vacuum show the cyclotron transmission increased more than 50% (from 5.7% to 9.0%) for a Xe 27+ at 603 MeV, more than doubled for a Bi 41+ beam (from 1.9% to 4.6%) at 904 MeV and tripled for a U 47+ beam (from 1.2% to 3.6%) at 1,115 MeV. At about 5 NeV/nucleon 92 enA (2.2 pnA) for Bi 41+ and 14 enA (0.3 pnA) for U 47+ were extracted ut of the 88-Inch Cyclotron Ion beams with charge states as high as U 64+ have been produced by the LBNL AECR-U ion source and accelerated through the cyclotron for the first time. The beam losses for a variety of ultra high charge state ions were measured as a function of cyclotron pressure and compared with the calculations from the existing models

  7. Vacuum improvements for ultra high charge state ion acceleration

    International Nuclear Information System (INIS)

    Xie, Z.Q.; Lyneis, C.M.; Clark, D.J.; Guy, A.; Lundgren, S.A.

    1999-01-01

    The installation of a second cryo panel has significantly improved the vacuum in the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory. The neutral pressure in the extraction region decreased from 1.2 x 10 -6 down to about 7 x 10 -7 Torr. The vacuum improvement reduces beam loss from charge changing collisions and enhances the cyclotron beam transmission, especially for the high charge state heavy ions. Tests with improved vacuum show the cyclotron transmission increased more than 50% (from 5.7% to 9.0%) for a Xe 27+ at 603 MeV, more than doubled for a Bi 41+ beam (from 1.9% % to 4.6%) at 904 MeV and tripled for a U 47+ beam (from 1.2% to 3.6%) at 1115 MeV. At about 5 MeV/nucleon 92 enA (2.2 pnA) for Bi 41+ and 14 enA (0.3 pnA) for U 47+ were extracted out of the 88-Inch Cyclotron Ion beams with charge states as high as U 64+ have been produced by the LBNL AECR-U ion source and accelerated through the cyclotron for the first time. The beam losses for a variety of ultra high charge state ions were measured as a function of cyclotron pressure and compared with the calculations from the existing models. (authors)

  8. Modeling of the anode surface deformation in high-current vacuum arcs with AMF contacts

    International Nuclear Information System (INIS)

    Huang, Xiaolong; Wang, Lijun; Deng, Jie; Jia, Shenli; Qin, Kang; Shi, Zongqian

    2016-01-01

    A high-current vacuum arc subjected to an axial magnetic field is maintained in a diffuse status. With an increase in arc current, the energy carried by the arc column to the anode becomes larger and finally leads to the anode temperature exceeding the melting point of the anode material. When the anode melting pool is formed, and the rotational plasma of the arc column delivers its momentum to the melting pool, the anode melting pool starts to rotate and also flow outwards along the radial direction, which has been photographed by some researchers using high-speed cameras. In this paper, the anode temperature and melting status is calculated using the melting and solidification model. The swirl flow of the anode melting pool and deformation of the anode is calculated using the magneto-hydrodynamic (MHD) model with the volume of fraction (VOF) method. All the models are transient 2D axial-rotational symmetric models. The influence of the impaction force of the arc plasma, electromagnetic force, viscosity force, and surface tension of the liquid metal are all considered in the model. The heat flux density injected into the anode and the arc pressure are obtained from the 3D numerical simulation of the high-current vacuum arc using the MHD model, which gives more realistic parameters for the anode simulation. Simulation results show that the depth of the anode melting pool increases with an increase in the arc current. Some droplets sputter out from the anode surface, which is caused by the inertial centrifugal force of the rotational melting pool and strong plasma pressure. Compared with the previous anode melting model without consideration of anode deformation, when the deformation and swirl flow of the anode melting pool are considered, the anode temperature is relatively lower, and just a little more than the melting point of Cu. This is because of liquid droplets sputtering out of the anode surface taking much of the energy away from the anode surface. The

  9. High vacuum general purpose scattering chamber for nuclear reaction study

    International Nuclear Information System (INIS)

    Suresh Kumar; Ojha, S.C.

    2003-01-01

    To study the nuclear reactions induced by beam from medium energy accelerators, one of the most common facility required is a scattering chamber. In the scattering chamber, projectile collides with the target nucleus and the scattered reaction products are detected with various type of nuclear detector at different angles with respect to the beam. The experiments are performed under high vacuum to minimize the background reaction and the energy losses of the charged particles. To make the chamber general purpose various requirement of the experiments are incorporated into it. Changing of targets, changing angle of various detectors while in vacuum are the most desired features. The other features like ascertaining the beam spot size and position on the target, minimizing the background counts by proper beam dump, accurate positioning of the detector as per plan etc. are some of the important requirements

  10. Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

    International Nuclear Information System (INIS)

    Insepov, Z.; Norem, J.; Veitzer, S.

    2010-01-01

    Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

  11. High Charge State Ions Extracted from Metal Plasmas in the Transition Regime from Vacuum Spark to High Current Vacuum Arc

    International Nuclear Information System (INIS)

    Yushkov, Georgy Yu.; Anders, A.

    2008-01-01

    Metal ions were extracted from pulsed discharge plasmas operating in the transition region between vacuum spark (transient high voltage of kV) and vacuum arc (arc voltage ∼ 20 V). At a peak current of about 4 kA, and with a pulse duration of 8 (micro)s, we observed mean ion charges states of about 6 for several cathode materials. In the case of platinum, the highest average charge state was 6.74 with ions of charge states as high as 10 present. For gold we found traces of charge state 11, with the highest average charge state of 7.25. At currents higher than 5 kA, non-metallic contaminations started to dominate the ion beam, preventing further enhancement of the metal charge states

  12. The AGS Booster vacuum systems

    International Nuclear Information System (INIS)

    Hseuh, H.C.

    1989-01-01

    The AGS Booster is a synchrotron for the acceleration of both protons and heavy ions. The design pressure of low 10 -11 mbar is required to minimize beam loss of the partially stripped heavy ions. To remove contaminants and to reduce outgassing, the vacuum chambers and the components located in them will be chemically cleaned, vacuum fired, baked then treated with nitric oxide. The vacuum sector will be insitu baked to a minimum of 200 degree C and pumped by the combination of sputter ion pumps and titanium sublimation pumps. This paper describes the design and the processing of this ultra high vacuum system, and the performance of some half-cell vacuum chambers. 9 refs., 7 figs

  13. Field installed brazed thermocouple feedthroughs for high vacuum experiments

    International Nuclear Information System (INIS)

    Anderson, P.; Messick, C.

    1983-01-01

    In order to reduce the occurrence of vacuum leaks and to increase the availability of the DIII vacuum vessel for experimental operation, effort was applied to developing a vacuum-tight brazed feedthrough system for sheathed thermocouples, stainless steel sheathed conductor cables and tubes for cooling fluids. This brazed technique is a replacement for elastomer ''O'' ring sealed feedthroughs that have proven vulnerable to leaks caused by thermal cycling, etc. To date, about 200 feedthroughs have been used. Up to 91 were grouped on a single conflat flange mounted in a bulkhead connector configuration which facilitates installation and removal. Investigation was required to select a suitable braze alloy, flux and installation procedure. Braze alloy selection was challenging since the alloy was required to have: 1) Melting temperature in excess of the 250 0 C (482 0 F) bakeout temperature. 2) No high vapor pressure elements. 3) Good wetting properties when used in air with acceptable flux. 4) Good wettability to 300 series stainless steel and inconel

  14. High current vacuum arc ion source for heavy ion fusion

    International Nuclear Information System (INIS)

    Qi, N.; Schein, J.; Gensler, S.; Prasad, R.R.; Krishnan, M.; Brown, I.

    1999-01-01

    Heavy Ion fusion (HIF) is one of the approaches for the controlled thermonuclear power production. A source of heavy ions with charge states 1+ to 2+, in ∼0.5 A current beams with ∼20 micros pulse widths and ∼10 Hz repetition rates are required. Thermionic sources have been the workhorse for the HIF program to date, but suffer from sloe turn-on, heating problems for large areas, are limited to low (contact) ionization potential elements and offer relatively low ion fluxes with a charge state limited to 1+. Gas injection sources suffer from partial ionization and deleterious neutral gas effects. The above shortcomings of the thermionic ion sources can be overcome by a vacuum arc ion source. The vacuum arc ion source is a good candidate for HIF applications. It is capable of providing ions of various elements and different charge states, in short and long pulse bursts, with low emittance and high beam currents. Under a Phase-I STTR from DOE, the feasibility of the vacuum arc ion source for the HIF applications is investigated. An existing ion source at LBNL was modified to produce ∼0.5 A, ∼60 keV Gd (A∼158) ion beams. The experimental effort concentrated on beam noise reduction, pulse-to-pulse reproducibility and achieving low beam emittance at 0.5 A ion current level. Details of the source development will be reported

  15. Advanced capabilities and applications of a sputter-RBS system

    International Nuclear Information System (INIS)

    Brijs, B.; Deleu, J.; Beyer, G.; Vandervorst, W.

    1999-01-01

    In previous experiments, sputter-RBS 1 has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity for Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions

  16. Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

    Science.gov (United States)

    Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

    2018-02-01

    The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

  17. Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

    International Nuclear Information System (INIS)

    Hezam, M.; Tabet, N.; Mekki, A.

    2010-01-01

    ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

  18. High vacuum portable pumping station suitable for accelerator use

    International Nuclear Information System (INIS)

    Stattel, P.; Briggs, J.; DeBoer, W.; Skelton, R.

    1985-01-01

    The need for a Portable Pump Station for Ultra High Vacuum use became apparent when the ''Isabelle'' collider was first being designed. A Portable Pump Station had to be developed which contained the following features: maneuverability, compact size, rugged, self protected against various failures, capable of running unattended, and capable of reaching 10 -9 torr. The Pump Station that was developed and other variations are the subject of this paper. Emphasis will be on the Isabelle and HITL versions. 1 ref., 2 figs., 1 tab

  19. High-temperature vacuum distillation separation of plutonium waste salts

    International Nuclear Information System (INIS)

    Garcia, E.

    1996-01-01

    In this task, high-temperature vacuum distillation separation is being developed for residue sodium chloride-potassium chloride salts resulting from past pyrochemical processing of plutonium. This process has the potential of providing clean separation of the salt and the actinides with minimal amounts of secondary waste generation. The process could produce chloride salt that could be discarded as low-level waste (LLW) or low actinide content transuranic (TRU) waste, and a concentrated actinide oxide powder that would meet long-term storage standards (DOE-DTD-3013-94) until a final disposition option for all surplus plutonium is chosen

  20. Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

    2013-01-01

    Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

  1. Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

    Science.gov (United States)

    Anders, André; Yushkov, Georgy Yu.

    2009-04-01

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

  2. Plasma 'anti-assistance' and 'self-assistance' to high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Anders, Andre; Yushkov, Georgy Yu.

    2009-01-01

    A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering

  3. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

  4. High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

    2015-01-01

    Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

  5. Construction of sputtering system and preparation of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Kaynak, E.

    2000-01-01

    The preparation of high T c superconducting thin film is important both for the understanding of fundamental behaviours of these materials and for the investigations on the usefulness of technological applications. High quality thin films can be prepared by various kinds of techniques being used today. Among these, sputtering is the most preferred one. The primary aim of this work is the construction of a r. f. and c. magnetron sputtering system. For this goal, a magnetron sputtering system was designed and constructed having powers up to 500W (r.f.) and 1KW (d.c.) that enables to deposit thin films of various kinds of materials: metals, ceramics and magnetic materials. The temperature dependence of the electrical resistance of the films was investigated by using four-point probe method. The zero resistance and the transition with of the films were measured as 80-85 K, and 2-9 K, respectively. The A.C. susceptibility experiments were done by utilising the system that was designed and constructed. The applied field dependence of the real and imaginary components of the susceptibility that were measured between the 77-120 K temperature interval and at a fixed frequency was investigated

  6. Niobium sputter deposition on quarter wave resonators

    CERN Document Server

    Viswanadham, C; Jayaprakash, D; Mishra, R L

    2003-01-01

    Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

  7. Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

    Directory of Open Access Journals (Sweden)

    Claudiu V. Falub

    2017-05-01

    Full Text Available Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8” Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100 nm thick magnetic layers and (2-20 nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ∼(7-120 Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency, while the coercivity was kept low, ∼(0.05-0.9 Oe. The alignment of the easy axis (EA on the 8” wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM, X-ray reflectivity (XRR with reciprocal space mapping (RSM and magneto-optical Kerr effect (MOKE measurements.

  8. New perspectives in vacuum high voltage insulation. II. Gas desorption

    CERN Document Server

    Diamond, W T

    1998-01-01

    An examination has been made of gas desorption from unbaked electrodes of copper, niobium, aluminum, and titanium subjected to high voltage in vacuum. It has been shown that the gas is composed of water vapor, carbon monoxide, and carbon dioxide, the usual components of vacuum outgassing, plus an increased yield of hydrogen and light hydrocarbons. The gas desorption was driven by anode conditioning as the voltage was increased between the electrodes. The gas is often desorbed as microdischarges-pulses of a few to hundreds of microseconds-and less frequently in a more continuous manner without the obvious pulsed structure characteristic of microdischarge activity. The quantity of gas released was equivalent to many monolayers and consisted mostly of neutral molecules with an ionic component of a few percent. A very significant observation was that the gas desorption was more dependent on the total voltage between the electrodes than on the electric field. It was not triggered by field-emitted electrons but oft...

  9. Cavity Control and Cooling of Nanoparticles in High Vacuum

    Science.gov (United States)

    Millen, James

    2016-05-01

    Levitated systems are a fascinating addition to the world of optically-controlled mechanical resonators. It is predicted that nanoparticles can be cooled to their c.o.m. ground state via the interaction with an optical cavity. By freeing the oscillator from clamping forces dissipation and decoherence is greatly reduced, leading to the potential to produce long-lived, macroscopically spread, mechanical quantum states, allowing tests of collapse models and any mass limit of quantum physics. Reaching the low pressures required to cavity-cool to the ground state has proved challenging. Our approach is to cavity cool a beam of nanoparticles in high vacuum. We can cool the c.o.m. motion of nanospheres, and control the rotation of nanorods, with the potential to produce cold, aligned nanostructures. Looking forward, we will utilize novel microcavities to enhance optomechanical cooling, preparing particles in a coherent beam ideally suited to ultra-high mass interferometry at 107 a.m.u.

  10. Vacuum system design for the PEP-II B Factory High-Energy Ring

    International Nuclear Information System (INIS)

    Perkins, C.; Bostic, D.; Daly, E.

    1994-06-01

    The design of the vacuum system for the PEP-II B Factory High-Energy Ring is reviewed. The thermal design and vacuum requirements are particularly challenging in PEP-II due to high stored beam currents up to 3.0 amps in 1658 bunches. The vacuum chambers for the HER arcs are fabricated by electron beam welding extruded copper sections up to 6 m long. Design of these chambers and the vacuum PumPing configuration is described with results from vacuum and thermal analyses

  11. Advances in high voltage insulation and arc interruption in SF6 and vacuum

    CERN Document Server

    Maller, V N

    1982-01-01

    Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

  12. Inductive energy storage using high voltage vacuum circuit breakers

    International Nuclear Information System (INIS)

    McCann, R.B.; Woodson, H.H.; Mukutmoni, T.

    1976-01-01

    Controlled thermonuclear fusion experiments currently being planned require large amounts of pulsed energy. Inductive energy storage systems (IES) appear to be attractive for at least two applications in the fusion research program: high beta devices and those employing turbulent heating. The well-known roadblock to successful implementation of IES is the development of a reliable and cost-effective off-switch capable of handling high currents and withstanding high recovery voltages. The University of Texas at Austin has a program to explore the application of conventional vacuum circuit breakers designed for use in AC systems, in conjunction with appropriate counter pulse circuits, as off-switches in inductive energy storage systems. The present paper describes the IES employing vacuum circuit breakers as off-switches. Since the deionization property of these circuit breakers is of great importance to the design and the cost of the counter-pulse circuit, a synthetic test installation to test these breakers has been conceived, designed and is being installed in the Fusion Research Center, University of Texas at Austin. Some design aspects of the facility will be discussed here. Finally, the results of the study on a mathematical model developed and optimized to determine the least cost system which meets both the requirements of an off-switch for IES Systems and the ratings of circuit breakers used in power systems has been discussed. This analysis indicates that the most important factor with respect to the system cost is the derating of the circuit breakers to obtain satisfactory lifetimes

  13. Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

    International Nuclear Information System (INIS)

    Kulkarni, S.; Bayard, M.

    1991-01-01

    High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

  14. Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

    Science.gov (United States)

    Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

    2002-07-01

    We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

  15. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    OpenAIRE

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the...

  16. Determining the mode of high voltage breakdowns in vacuum devices

    International Nuclear Information System (INIS)

    Miller, H.C.; Furno, E.J.; Sturtz, J.P.

    1980-01-01

    High voltage breakdowns (HVBs) occur in many vacuum devices. It frequently is of great practical interest to know the type (or mode) of such HVB's, since this can indicate weak points in the device. Post-mortems can sometimes be helpful, but it would be quite desirable to have a technique which would allow the HVB mode to be determined in an operating device. Photography can be quite helpful, but unfortunately many devices do not permit optical access to the region of interest. However, the idea of using photography in conjunction with other diagnostic techniques to establish the validity of these techniques seemed promising, since these techniques could then be used to determine the mode of HVBs in opaque devices. A literature search indicates that promising techniques are to measure the voltage applied to the device (or the current through the device) and also to look for x-rays generated by the device during an HVB

  17. Micro-damage propagation in ultra-high vacuum seals

    CERN Document Server

    Lutkiewicz, P; Garion, C

    2010-01-01

    The paper addresses a fundamental problem of tightness of ultra-high vacuum systems (UHV) at cryogenic temperatures in the light of continuum damage mechanics (CDM). The problem of indentation of a rigid punch into an elastic-plastic half-space is investigated based on rate independent plasticity with mixed kinematic and isotropic hardening. The micro-damage fields are modeled by using an anisotropic approach with a kinetic law of damage evolution suitable for ductile materials and cryogenic temperatures. The model has been experimentally validated and the results are used to predict the onset of macro-cracking (loss of tightness) and the corresponding load (contact pressure). The algorithm is applied in the design of UHV systems for particle accelerators. (C) 2009 Published by Elsevier Ltd.

  18. Effect of residual gas on structural, electrical and mechanical properties of niobium films deposited by magnetron sputtering deposition

    Science.gov (United States)

    Wang, Lanruo; Zhong, Yuan; Li, Jinjin; Cao, Wenhui; Zhong, Qing; Wang, Xueshen; Li, Xu

    2018-04-01

    Magnetron sputtering is an important method in the superconducting thin films deposition. The residual gas inside the vacuum chamber will directly affect the quality of the superconducting films. In this paper, niobium films are deposited by magnetron sputtering under different chamber residual gas conditions. The influence of baking and sputtering process on residual gas are studied as well. Surface morphology, electrical and mechanical properties of the films are analysed. The residual gas analysis result before the sputtering process could be regarded as a reference condition to achieve high quality superconducting thin films.

  19. Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

    Science.gov (United States)

    Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

    2017-02-01

    Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

  20. Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

    International Nuclear Information System (INIS)

    Andersson, Joakim; Ni, Pavel; Anders, André

    2013-01-01

    Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation

  1. Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

    2002-01-01

    Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

  2. Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

    International Nuclear Information System (INIS)

    Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

    2011-01-01

    Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

  3. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

    2013-07-15

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  4. Low-damage high-throughput grazing-angle sputter deposition on graphene

    International Nuclear Information System (INIS)

    Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

    2013-01-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

  5. Low-damage high-throughput grazing-angle sputter deposition on graphene

    Science.gov (United States)

    Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

    2013-07-01

    Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

  6. Laser sputtering. Pt. 1

    International Nuclear Information System (INIS)

    Kelly, R.; Cuomo, J.J.; Leary, P.A.; Rothenburg, J.E.; Braren, B.E.; Aliotta, C.F.

    1985-01-01

    Irradiation, i.e. bombardment, with 193 nm laser pulses having an energy fluence of 2.5 J/cm 2 and a duration of proportional12 ns leads to rapid sputtering with Au, Al 2 O 3 , MgO, MgO.Al 2 O 3 , SiO 2 , glass, and LaB 6 , relatively slow sputtering with MgF 2 and diamond, and mainly thermal-stress cracking with W. Scanning electron microscopy (SEM) suggests that the mechanism for the sputtering of Au in either vacuum or air is one based on the hydrodynamics of molten Au, while an SEM-derived surface temperature estimate confirms that thermal sputtering (which might have been expected) is not possible. SEM with W shows that the near total lack of material removal is due to the thermal-stress cracking not leading to completed exfoliation, together with the surface temperature being too low for either hydrodynamical or thermal processes. Corresponding SEM with Al 2 O 3 shows, in the case of specimens bombarded in vacuum, topography of such a type that all mechanisms except electronic ones can be ruled out. The topography of Al 2 O 3 or other oxides bombarded in air through a mask is somewhat different, showing craters as for vacuum bombardments but ones which have a cone-like pattern on the bottom. (orig.)

  7. ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

    Energy Technology Data Exchange (ETDEWEB)

    Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

    2014-05-15

    Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

  8. The use of polyimide foils to prevent contamination from self-sputtering of {sup 252}Cf deposits in high-accuracy fission counting

    Energy Technology Data Exchange (ETDEWEB)

    Gilliam, David M. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)], E-mail: david.gilliam@nist.gov; Yue, Andrew [Department of Physics and Astronomy, University of Tennessee, Knoxville, TN (United States); Scott Dewey, M. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)

    2008-06-01

    It is demonstrated that a thin polyimide foil can be employed to prevent contamination from the self-sputtering of a {sup 252}Cf source under vacuum, with small energy loss of the emitted fission fragments, with very small effect on the efficiency of counting the fission fragments, and with a long lifetime of the plastic foils.

  9. Avoiding vacuum arcs in high gradient normal conducting RF structures

    CERN Document Server

    Sjøbæk, Kyrre Ness; Adli, Erik; Grudiev, Alexej; Wuensch, Walter

    In order to build the Compact LInear Collider (CLIC), accelerating structures reaching extremely high accelerating gradients are needed. Such structures have been built and tested using normal-conducting copper, powered by X-band RF power and reaching gradients of 100 MV/m and above. One phenomenon that must be avoided in order to reliably reach such gradients, is vacuum arcs or “breakdowns”. This can be accomplished by carefully designing the structure geometry such that high surface fields and large local power flows are avoided. The research presented in this thesis presents a method for optimizing the geometry of accelerating structures so that these breakdowns are made less likely, allowing the structure to operate reliably at high gradients. This was done primarily based on a phenomenological scaling model, which predicted the maximum gradient as a function of the break down rate, pulse length, and field distribution in the structure. The model is written in such a way that it allows direct comparis...

  10. Vacuum structure of the electroweak theory in high magnetic fields

    International Nuclear Information System (INIS)

    Olesen, P.

    1991-05-01

    In the electroweak theory one can reach the unbroken phase SU(2) x U y (1) by pumping enough magnetic energy into the system. The whole energy is then carried by the fields associated with U y (1), whereas the fields corresponding to SU(2) are in a vacuum state. We show that the vacuum is non-trivial in the sense that it consists of a condensate of zero-field twists which arise in a smooth way from a condensate of vortex lines existing in the broken phase. An explicit vacuum solution is constructed in terms of Weierstrass' elliptic function. (orig.)

  11. Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field

    Energy Technology Data Exchange (ETDEWEB)

    Li, Chunwei, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [College of Engineering and Technology, Northeast Forestry University, Harbin 150040 (China); State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tian, Xiubo, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China)

    2016-08-15

    The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

  12. Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate

    Directory of Open Access Journals (Sweden)

    Robert Mamazza

    2012-04-01

    Full Text Available Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8–210 μA/cm2 and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm −2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8–15 μC/cm2. When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10−2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10−3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities.

  13. High vacuum high temperature x-ray camera (1961)

    International Nuclear Information System (INIS)

    Baron, J.L.

    1961-01-01

    - This camera makes it possible to carry out X-ray studies on highly oxidisable materials, up to about 900 deg. C. Most of the existing models do not provide sufficient protection against the formation of surface oxide or carbide films on the sample. The present arrangement makes it possible to operate at very low pressures: 5 x 10 -8 to 10 -7 torr, thanks to an entirely metallic apparatus. The radiation heating system consists of an incandescent lamp, outside the evacuated portion, and a reflector which concentrates the energetic flux into the sample through a silica window. The heated parts have thus only a small thermal inertia. With the apparatus it has been possible to determine the phase parameters of uranium-α up to 650 deg. C with a precision of ± 0.0015 A. A similar study has been carried out on a uranium-chromium alloy in the β-phase up to 740 deg. C. (author) [fr

  14. Jets with ALICE: from vacuum to high-temperature QCD

    CERN Multimedia

    CERN. Geneva

    2014-01-01

    ALICE measures jets in pp, p-Pb and Pb-Pb collisions to study modifications of the jet fragmentation due to cold nuclear and hot QCD matter. In pp collisions ALICE has measured inclusive jet yields, the ratio of yields with different resolution R, a variety of jet shapes and the semi-inclusive rate of jets recoiling against a high transverse momentum hadron trigger. These measurements are compared to NLO calculations including hadronization corrections and to MC models. Jets in pp are primarily conceived as a vacuum reference for jet observables in p-Pb and Pb-Pb collisions. In p-Pb collisions ALICE explores cold nuclear matter effects on jet yields, jet fragmentation and dijet acoplanarity. The hot and dense medium created in heavy-ion collisions is expected to modify the fragmentation of high energy partonic projectiles leading to changes in the energy and structure of the reconstructed jets with respect to pp jets. The study of modified jets aims at understanding the detailed mechanisms of in-medium energy...

  15. Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

    Science.gov (United States)

    Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

    2018-02-01

    A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

  16. High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

    Science.gov (United States)

    Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

    Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

  17. Observation of self-sputtering in energetic condensation of metal ions

    International Nuclear Information System (INIS)

    Anders, Andre

    2004-01-01

    The condensation of energetic metal ions on a surface may cause self-sputtering even in the absence of substrate bias. Charge-state-averaged self-sputtering yields were determined for both zirconium and gold ions generated by a cathodic vacuum arc. Films were deposited on differently biased substrates exposed to streaming Zr and Au vacuum arc plasma. The self-sputtering yields for both metals were estimated to be about 0.05 in the absence of bias, and exceeding 0.5 when bias reached-50 V. These surprisingly high values can be reconciled with binary collision theory and molecular dynamics calculations taking high the kinetic and potential energy of vacuum arc ions into account

  18. High-vacuum chamber for the irradiation of targets

    International Nuclear Information System (INIS)

    Krimmel, E.; Dullnig, H.

    1975-01-01

    The high vacuum chamber for irradiating targets with X-rays, electron or ion beams is connected to a magazine storage vessel for the targets through a loading duct which can be evacuated. This duct is traversed by a carriage transporting a magazine to the irradiation position. The duct can be closed by a closing valve. Inside the chamber there is a grip attached to a swivel arm which takes a frame with a target from the magazine, or vice versa, and moves it into the irradiation position. This means that the chamber must always be kept at a constant internal pressure. The swiveling shaft for the swivel arm and the transport pinion of the carriage in addition are magnetically coupled to drive shafts located outside the chamber, which obviates the need for any seals. The grip may also deposit the frame on a goniometer, which allows the target to be aligned in the irradiation position. In addition, the measuring probes used to record the amount of reflected radiation are installed in the chamber under electrically insulated conditions relative to the chamber. (DG/RF) [de

  19. SLC polarized beam source ultra-high-vacuum design

    International Nuclear Information System (INIS)

    Lavine, T.L.; Clendenin, J.E.; Garwin, E.L.; Hoyt, E.W.; Hoyt, M.W.; Miller, R.H.; Nuttall, J.A.; Schultz, D.C.; Wright, D.

    1991-05-01

    This paper describes the design of the ultra-high vacuum system for the beam-line from the 160-kV polarized electron gun to the linac injector in the Stanford Linear Collider (SLC). The polarized electron source is a GaAs photocathode, requiring 10 -11 -Torr-range pressure for adequate quantum efficiency and longevity. The photo-cathode is illuminated by 3-nsec-long laser pulses. Photo-cathode maintenance and improvements require occasional substitution of guns with rapid restoration of UHV conditions. Differential pumping is crucial since the pressure in the injector is more than 10 times greater than the photocathode can tolerate, and since electron-stimulated gas desorption from beam loss in excess of 0.1% of the 20-nC pulses may poison the photocathode. Our design for the transport line contains a differential pumping region isolated by a pair of valves. Exchange of guns requires venting only this isolated region which can be restored to UHV rapidly by baking. The differential pumping is performed by non-evaporable getters (NEGs) and an ion pump. 3 refs., 3 figs

  20. Jets with ALICE. From vacuum to QCD at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Leticia, Cunqueiro [University of Muenster (Germany); Collaboration: ALICE-Collaboration

    2016-07-01

    The hot and dense medium created in heavy-ion collisions is expected to modify the yield and radiation pattern of jets relative to proton proton collisions. The study of medium-induced modifications in jets aims at the understanding of the detailed mechanisms of in medium energy loss of partons and of fundamental properties of QCD at high temperatures. ALICE measures jets in pp, p-Pb and Pb-Pb collisions, where pp and p-Pb are conceived primarily as a reference for vacuum and cold nuclear effects respectively. The jet program comprises measurements like yields for different resolution R, intra-jet and inter-jet modifications via jet shapes and hadron-jet correlations, path length dependence of energy loss via jet flow v{sub 2}, hadrochemistry via jet constituent identification, flavour/mass hierarchy of energy loss via heavy flavour tagging etc. Several of the latest ALICE jet physics results are presented and discussed with emphasis on new studies on jet substructure and jet shapes.

  1. A high-current pulsed cathodic vacuum arc plasma source

    International Nuclear Information System (INIS)

    Oates, T.W.H.; Pigott, J.; Mckenzie, D.R.; Bilek, M.M.M.

    2003-01-01

    Cathodic vacuum arcs (CVAs) are well established as a method for producing metal plasmas for thin film deposition and as a source of metal ions. Fundamental differences exist between direct current (dc) and pulsed CVAs. We present here results of our investigations into the design and construction of a high-current center-triggered pulsed CVA. Power supply design based on electrolytic capacitors is discussed and optimized based on obtaining the most effective utilization of the cathode material. Anode configuration is also discussed with respect to the optimization of the electron collection capability. Type I and II cathode spots are observed and discussed with respect to cathode surface contamination. An unfiltered deposition rate of 1.7 nm per pulse, at a distance of 100 mm from the source, has been demonstrated. Instantaneous plasma densities in excess of 1x10 19 m -3 are observed after magnetic filtering. Time averaged densities an order of magnitude greater than common dc arc densities have been demonstrated, limited by pulse repetition rate and filter efficiency

  2. Effects of surface relief on the high-dose sputtering of amorphous silicon and graphite by Ar ions

    International Nuclear Information System (INIS)

    Shulga, V.I.

    2014-01-01

    The effects of ion-induced surface relief on high-dose sputtering of amorphous silicon and graphite targets have been studied using binary-collision computer simulation. The relief was modeled as a wavelike surface along two mutually perpendicular surface axes (a 3D hillock-and-valley relief). Most simulations were carried out for normally-incident 30-keV Ar ions. It was shown that the surface relief can both increase and decrease the sputtering yield compared to that for a flat surface. The results of simulations suggest that stabilization of the surface relief is possible even in the absence of any smoothing processes such as surface diffusion of atoms. Effects of a surface relief on the experimentally measurable angular and energy distributions of sputtered atoms are also considered. The fitting parameters of these distributions are shown to be non-monotonic functions of the relief aspect ratio. The angular distribution of atoms sputtered from a relief surface is modulated to a great extent by the shape of the relief. For a rough surface, azimuthal isotropy of the angular distribution of sputtered atoms was found, but at high bombarding energies only

  3. Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

    International Nuclear Information System (INIS)

    Krauss, A.R.; Auciello, O.

    1992-01-01

    Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

  4. High efficient vacuum arc plant for coating deposition

    International Nuclear Information System (INIS)

    Aksenov, I.I.; Belous, V.A.

    2008-01-01

    A number of progressive technical solutions are used in the 'Bulat-9' machine designed for vacuum arc coating deposition. The features of the machine are: a dome shaped working chamber that allows to 'wash' its inner surfaces with hot nitrogen or argon gas; a system of automatic loading/unloading of articles to be treated into the chamber through its bottom; shielding of the inner surfaces of the chamber by heated panels; improved vacuum arc plasma sources including filtered one; four ported power supply for the vacuum arc discharges; LC oscillatory circuits suppressing microarcs on the substrate; the system of automatic control of a working process. The said technical features cause the apparatus originality and novelty preserved up to-day

  5. High performance ZnO:Al films deposited on PET substrates using facing target sputtering

    Science.gov (United States)

    Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

    2013-10-01

    ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10-3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

  6. High performance ZnO:Al films deposited on PET substrates using facing target sputtering

    International Nuclear Information System (INIS)

    Guo, Tingting; Dong, Guobo; Gao, Fangyuan; Xiao, Yu; Chen, Qiang; Diao, Xungang

    2013-01-01

    ZnO:Al (ZAO) thin films have been deposited on flexible PET substrates using a plasma damage-free facing target sputtering system at room temperature. The structure, surface morphology, electrical and optical properties were investigated as a function of working power. All the samples have a highly preferred orientation of the c-axis perpendicular to the PET substrate and have a high quality surface. With increased working power, the carrier concentration changes slightly, the mobility increases at the beginning and decreases after it reaches a maximum value, in line with electrical conductivity. The figure of merit has been significantly improved with increasing of the working power. Under the optimized condition, the lowest resistivity of 1.3 × 10 −3 Ω cm with a sheet resistance of 29 Ω/□ and the relative visible transmittance above 93% in the visible region were obtained.

  7. High Reliability R-10 Windows Using Vacuum Insulating Glass Units

    Energy Technology Data Exchange (ETDEWEB)

    Stark, David

    2012-08-16

    The objective of this effort was for EverSealed Windows (“EverSealed” or “ESW”) to design, assemble, thermally and environmentally test and demonstrate a Vacuum Insulating Glass Unit (“VIGU” or “VIG”) that would enable a whole window to meet or exceed the an R-10 insulating value (U-factor ≤ 0.1). To produce a VIGU that could withstand any North American environment, ESW believed it needed to design, produce and use a flexible edge seal system. This is because a rigid edge seal, used by all other know VIG producers and developers, limits the size and/or thermal environment of the VIG to where the unit is not practical for typical IG sizes and cannot withstand severe outdoor environments. The rigid-sealed VIG’s use would be limited to mild climates where it would not have a reasonable economic payback when compared to traditional double-pane or triple-pane IGs. ESW’s goals, in addition to achieving a sufficiently high R-value to enable a whole window to achieve R-10, included creating a VIG design that could be produced for a cost equal to or lower than a traditional triple-pane IG (low-e, argon filled). ESW achieved these goals. EverSealed produced, tested and demonstrated a flexible edge-seal VIG that had an R-13 insulating value and the edge-seal system durability to operate reliably for at least 40 years in the harshest climates of North America.

  8. Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

    2016-12-30

    Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

  9. Sputtering of sub-micrometer aluminum layers as compact, high-performance, light-weight current collector for supercapacitors

    Science.gov (United States)

    Busom, J.; Schreiber, A.; Tolosa, A.; Jäckel, N.; Grobelsek, I.; Peter, N. J.; Presser, V.

    2016-10-01

    Supercapacitors are devices for rapid and efficient electrochemical energy storage and commonly employ carbon coated aluminum foil as the current collector. However, the thickness of the metallic foil and the corresponding added mass lower the specific and volumetric performance on a device level. A promising approach to drastically reduce the mass and volume of the current collector is to directly sputter aluminum on the freestanding electrode instead of adding a metal foil. Our work explores the limitations and performance perspectives of direct sputter coating of aluminum onto carbon film electrodes. The tight and interdigitated interface between the metallic film and the carbon electrode enables high power handling, exceeding the performance and stability of a state-of-the-art carbon coated aluminum foil current collector. In particular, we find an enhancement of 300% in specific power and 186% in specific energy when comparing aluminum sputter coated electrodes with conventional electrodes with Al current collectors.

  10. Optical properties of ITO films obtained by high-frequency magnetron sputtering with accompanying ion treatment

    Energy Technology Data Exchange (ETDEWEB)

    Krylov, P. N., E-mail: ftt@uni.udm.ru; Zakirova, R. M.; Fedotova, I. V. [Udmurt State University (Russian Federation)

    2013-10-15

    A variation in the properties of indium-tin-oxide (ITO) films obtained by the method of reactive magnetron sputtering with simultaneous ion treatment is reported. The ITO films feature the following parameters in the optical range of 450-1100 nm: a transmission coefficient of 80%, band gap of 3.50-3.60 eV, and a refractive index of 1.97-2.06. All characteristics of the films depend on the ion-treatment current. The latter, during the course of deposition, reduces the resistivity of the ITO films with the smallest value of the resistivity being equal to 2 Multiplication-Sign 10{sup -3} {Omega} cm. The degradation of films with a high resistivity when kept in air is observed.

  11. Highly transparent conductive ITO/Ag/ITO trilayer films deposited by RF sputtering at room temperature

    Directory of Open Access Journals (Sweden)

    Ningyu Ren

    2017-05-01

    Full Text Available ITO/Ag/ITO (IAI trilayer films were deposited on glass substrate by radio frequency magnetron sputtering at room temperature. A high optical transmittance over 94.25% at the wavelength of 550 nm and an average transmittance over the visual region of 88.04% were achieved. The calculated value of figure of merit (FOM reaches 80.9 10-3 Ω-1 for IAI films with 15-nm-thick Ag interlayer. From the morphology and structural characterization, IAI films could show an excellent correlated electric and optical performance if Ag grains interconnect with each other on the bottom ITO layer. These results indicate that IAI trilayer films, which also exhibit low surface roughness, will be well used in optoelectronic devices.

  12. High power pulsed magnetron sputtering: A method to increase deposition rate

    International Nuclear Information System (INIS)

    Raman, Priya; McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

    2015-01-01

    High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed

  13. Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Feijoo, P.C., E-mail: pedronska@fis.ucm.es [Dpto. Física Aplicada III (Electricidad y Electrónica), Universidad Complutense de Madrid, Fac. de CC. Físicas. Av/Complutense S/N, E-28040 Madrid (Spain); Pampillón, M.A.; San Andrés, E. [Dpto. Física Aplicada III (Electricidad y Electrónica), Universidad Complutense de Madrid, Fac. de CC. Físicas. Av/Complutense S/N, E-28040 Madrid (Spain); Fierro, J.L.G. [Instituto de Catálisis y Petroleoquímica, Consejo Superior de Investigaciones Científicas, C/Marie Curie 2, E-28049 Cantoblanco (Spain)

    2015-10-30

    In this work we use the high pressure sputtering technique to deposit the high permittivity dielectric gadolinium scandate on silicon substrates. This nonconventional deposition technique prevents substrate damage and allows for growth of ternary compounds with controlled composition. Two different approaches were assessed: the first one consists of depositing the material directly from a stoichiometric GdScO{sub 3} target; in the second one, we anneal a nano-laminate of < 0.5 nm thick Gd{sub 2}O{sub 3} and Sc{sub 2}O{sub 3} films in order to control the composition of the scandate. Metal–insulator–semiconductor capacitors were fabricated with platinum gates for electrical characterization. Accordingly, we grew a Gd-rich Gd{sub 2−x}Sc{sub x}O{sub 3} film that, in spite of higher leakage currents, presents a better effective relative permittivity of 21 and lower density of defects. - Highlights: • GdScO is deposited on Si as a high permittivity dielectric by two procedures. • Films sputtered from GdScO{sub 3} target are Sc-rich and present thick interface SiO{sub x}. • Gd-rich GdScO is obtained from a nano-laminate sputtered from Sc{sub 2}O{sub 3} and Gd{sub 2}O{sub 3}. • Gd{sub 1.8}Sc{sub 0.2}O{sub 3} shows good effective permittivity and electrical properties.

  14. A simple, high-yield, apparatus for NEG coating of vacuum beamline elements

    International Nuclear Information System (INIS)

    Ron, G; Oort, R; Lee, D

    2010-01-01

    Non-Evaporable Getter (NEG) materials are extremely useful in vacuum systems for achieving Ultra High Vacuum. Recently, these materials have been used to coat the inner surfaces of vacuum components, acting as an internal, passive, vacuum pump. We have constructed a low cost apparatus, which allows coating of very small diameter vacuum tubes, used as differential pumping stages. Despite the relative ease of construction, we are routinely able to achieve high coating yields. We further describe an improvement to our system, which is able to achieve the same yield, at an even lower complexity by using an easily manufactured permanent magnet arrangement. The designs described are extendible to virtually any combination of length and diameter of the components to be coated.

  15. Ultra high vacuum system for Isabelle full cell

    International Nuclear Information System (INIS)

    Skelton, R.; Briggs, J.; Chou, T.S.; Foerster, C.; Stattel, P.

    1979-01-01

    A vacuum system consisting of a 40 m long 8.8 cm diameter stainless steel tube, pumped by 7 pumping stations, has been assembled using automatic welding methods. All components have been fired at 950 0 C in a vacuum furnace at a pressure -4 Torr. Each pumping station contains a Ti-sublimator, a 30 liter/s ion pump and an UHV gauge. After assembly, the entire system was baked out at 250 0 C for 24 hours. A pressure -11 Torr was reached after titanium flash. Surface treatment of stainless for 10 -11 Torr operation, bake out and conditioning cycle to read 1 x 10 -11 Torr, and leak checking at low pressures are discussed

  16. Sputtered catalysts

    International Nuclear Information System (INIS)

    Tyerman, W.J.R.

    1978-01-01

    A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

  17. On the non-linear nature of the variation, with intensity, of high energy cathode sputtering, and the variation of the latter with temperature (1960)

    International Nuclear Information System (INIS)

    Cassignol, C.; Ranc, G.

    1960-01-01

    A new cathode sputtering theory at high energy is presented which has been elaborated in taking in account the non-linearity of this phenomenon with the density of the impinging ions. This theory allows to predict the influence of target temperature on the rate of cathode sputtering. This influence is experimentally demonstrated. (author) [fr

  18. Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

    Science.gov (United States)

    Gamzina, Diana

    Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

  19. The design and structure of the ultra-high vacuum system of HIRFL-CSR

    International Nuclear Information System (INIS)

    Yang Xiaotian; Zhang Junhui; Zhang Xinjun; Meng Jun; Zhan Wenlong

    2001-01-01

    To minimize the beam loss due to charge exchange of very heavy ions with the residual gas molecules, ultra-high vacuum of 6x10 -9 Pa is required for the HIRFL-CSR facility, which is the lowest pressure in a large vacuum system in China up to now. The total length of the system is about 450 meters and the total inner surface is about 263 square meters. More than 500 standard vacuum components are needed and more than 400 different chambers have to be manufactured. A lot of researches have been down to try to find out the experiences to obtain the required pressure. In this article the following contents are described: the layout of the system; the structure of main vacuum chambers; the treatment method to reduce the outgassing rate of the chamber wall surfaces; vacuum equipment; pressure distribution and the progress of the system

  20. Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

    International Nuclear Information System (INIS)

    Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L; Joshi, L M; Nangru, S C

    2010-01-01

    A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

  1. Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

    Energy Technology Data Exchange (ETDEWEB)

    Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Joshi, L M; Nangru, S C, E-mail: pramod@ipr.res.i [Central Electronics Engineering Research Institute, Pilani, Rajasthan 333 031 (India)

    2010-02-01

    A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

  2. Geometric considerations in magnetron sputtering

    International Nuclear Information System (INIS)

    Thornton, J.A.

    1982-01-01

    The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

  3. Thick sputtered tantalum coatings for high-temperature energy conversion applications

    Energy Technology Data Exchange (ETDEWEB)

    Stelmakh, Veronika, E-mail: stelmakh@mit.edu; Peykov, Daniel; Chan, Walker R.; Senkevich, Jay J.; Joannopoulos, John D.; Soljačić, Marin; Celanovic, Ivan [Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Castillo, Robert; Coulter, Kent; Wei, Ronghua [Materials Engineering Department, Southwest Research Institute, San Antonio, Texas 78238 (United States)

    2015-11-15

    Thick sputtered tantalum (Ta) coatings on polished Inconel were investigated as a potential replacement for bulk refractory metal substrates used for high-temperature emitters and absorbers in thermophotovoltaic energy conversion applications. In these applications, high-temperature stability and high reflectance of the surface in the infrared wavelength range are critical in order to sustain operational temperatures and reduce losses due to waste heat. The reflectance of the coatings (8 and 30 μm) was characterized with a conformal protective hafnia layer as-deposited and after one hour anneals at 700, 900, and 1100 °C. To further understand the high-temperature performance of the coatings, the microstructural evolution was investigated as a function of annealing temperature. X-ray diffraction was used to analyze the texture and residual stress in the coatings at four reflections (220, 310, 222, and 321), as-deposited and after anneal. No significant changes in roughness, reflectance, or stress were observed. No delamination or cracking occurred, even after annealing the coatings at 1100 °C. Overall, the results of this study suggest that the thick Ta coatings are a promising alternative to bulk substrates and pave the way for a relatively low-cost and easily integrated platform for nanostructured devices in high-temperature energy conversion applications.

  4. Very Low-Cost, Rugged, High-Vacuum System for Mass Spectrometers, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA, the DoD, DHS, and commercial industry have a pressing need for miniaturized, rugged, low-cost, high vacuum systems. Recent advances in sensor technology at...

  5. High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films

    Energy Technology Data Exchange (ETDEWEB)

    Isherwood, P.J.M., E-mail: P.J.M.Isherwood@lboro.ac.uk [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Neves, N. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Bowers, J.W. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Newbatt, P. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Walls, J.M. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom)

    2014-09-01

    Nanoparticulate aluminium-doped zinc oxide powder was synthesised through detonation and subsequent rapid quenching of metallic precursors. This technique allows for precise compositional control and rapid nanoparticle production. The resulting powder was used to form sputter targets, which were used to deposit thin films by radio frequency sputtering. These films show excellent sheet resistance and transmission values for a wide range of deposition temperatures. Crystal structure analysis shows that crystals in the target have a random orientation, whereas the crystals in the films grow perpendicular to the substrate surface and propagate preferentially along the (002) axis. Higher temperature deposition reduces crystal quality with a corresponding decrease in refractive index and an increase in sheet resistance. Films deposited between room temperature and 300 °C were found to have sheet resistances equivalent to or better than indium tin oxide films for a given average transmission value. - Highlights: • Nanoparticulate AZO powder was used to produce sputter targets. • The powder synthesis technique allows for precise compositional control. • Sputtered films show excellent optical, electronic and structural properties. • High temperature films show reduced electrical and structural quality. • For a given transmission, films show equivalent sheet resistances to ITO.

  6. Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr

    International Nuclear Information System (INIS)

    Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.; Gessert, Timothy A.

    2016-01-01

    The authors demonstrate mobilities of >45 cm 2 /V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO 2 , instead of the more conventional 8–10 wt. %, and had varying ZrO 2 content from 0 to 3 wt. %, with a subsequent reduction in In 2 O 3 content. These films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. This result is attributed to the reduced concentration of SnO 2 . The addition of ZrO 2 yielded the highest mobilities at >55 cm 2 /V s and the films showed a modest increase in optical transmission with increasing Zr-content

  7. DEVELOPMENT OF TITANIUM NITRIDE COATING FOR SNS RING VACUUM CHAMBERS

    International Nuclear Information System (INIS)

    HE, P.; HSEUH, H.C.; MAPES, M.; TODD, R.; WEISS, D.

    2001-01-01

    The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with ∼100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DC-magnetron sputtering were conducted in a test chamber of relevant geometry to SNS ring vacuum chambers. Auger Electron Spectroscopy (AES) and Rutherford Back Scattering (RBS) were used to analyze the coatings for thickness, stoichiometry and impurity. Excellent results were obtained with magnetron sputtering. The development of the parameters for the coating process and the surface analysis results are presented

  8. Cermet insert high voltage holdoff for ceramic/metal vacuum devices

    Science.gov (United States)

    Ierna, William F.

    1987-01-01

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  9. Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

    Science.gov (United States)

    Ierna, W.F.

    1986-03-11

    An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

  10. High ion charge states in a high-current, short-pulse, vacuum ARC ion sources

    International Nuclear Information System (INIS)

    Anders, A.; Brown, I.; MacGill, R.; Dickinson, M.

    1996-01-01

    Ions of the cathode material are formed at vacuum arc cathode spots and extracted by a grid system. The ion charge states (typically 1-4) depend on the cathode material and only little on the discharge current as long as the current is low. Here the authors report on experiments with short pulses (several μs) and high currents (several kA); this regime of operation is thus approaching a more vacuum spark-like regime. Mean ion charge states of up to 6.2 for tungsten and 3.7 for titanium have been measured, with the corresponding maximum charge states of up to 8+ and 6+, respectively. The results are discussed in terms of Saha calculations and freezing of the charge state distribution

  11. High ion charge states in a high-current, short-pulse, vacuum arc ion source

    International Nuclear Information System (INIS)

    Anders, A.; Brown, I.; MacGill, R.; Dickinson, M.

    1995-09-01

    Ions of the cathode material are formed at vacuum arc cathode spots and extracted by a grid system. The ion charge states (typically 1--4) depend on the cathode material and only little on the discharge current as long as the current is low. Here the authors report on experiments with short pulses (several micros) and high currents (several kA); this regime of operation is thus approaching a more vacuum spark-like regime. Mean ion charge states of up to 6.2 for tungsten and 3.7 for titanium have been measured, with the corresponding maximum charge states of up to 8+ and 6+, respectively. The results are discussed in terms of Saha calculations and freezing of the charge state distribution

  12. Microstructure of ZnO thin films deposited by high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Reed, A.N., E-mail: amber.reed.5@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Shamberger, P.J. [Department of Materials Science and Engineering, Texas A& M University, College Station, TX 77843 (United States); Hu, J.J. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Muratore, C. [Department of Chemical and Materials Engineering, University of Dayton, Dayton, OH 45469 (United States); Bultman, J.E. [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States); University of Dayton Research Institute, University of Dayton, Dayton, OH 45469 (United States); Voevodin, A.A., E-mail: andrey.voevodin@us.af.mil [Materials and Manufacturing Directorate, Air Force Research Laboratory, 3005 Hobson Way, Wright Patterson Air Force Base, OH 45433 (United States)

    2015-03-31

    High power impulse magnetron sputtering was used to deposit thin (~ 100 nm) zinc oxide (ZnO) films from a ceramic ZnO target onto substrates heated to 150 °C. The resulting films had strong crystallinity, highly aligned (002) texture and low surface roughness (root mean square roughness less than 10 nm), as determined by X-ray diffraction, transmission electron microscopy, scanning electron microscopy and atomic force spectroscopy measurements. Deposition pressure and target–substrate distance had the greatest effect on film microstructure. The degree of alignment in the films was strongly dependent on the gas pressure. Deposition at pressures less than 0.93 Pa resulted in a bimodal distribution of grain sizes. An initial growth layer with preferred orientations (101) and (002) parallel to the interface was observed at the film–substrate interface under all conditions examined here; the extent of that competitive region was dependent on growth conditions. Time-resolved current measurements of the target and ion energy distributions, determined using energy resolved mass spectrometry, were correlated to film microstructure in order to investigate the effect of plasma conditions on film nucleation and growth. - Highlights: • Low temperature growth of nanocrystalline zinc oxide (ZnO) films. • ZnO films had a highly (002) textured, smooth, dense microstructure. • Dominant (002) orientation of films was pressure dependent. • Interfacial (101)/(002) mixed orientation layer controlled by substrate location.

  13. Benchmarking Pt and Pt-lanthanide sputtered thin films for oxygen electroreduction

    DEFF Research Database (Denmark)

    Zamburlini, Eleonora; Jensen, Kim Degn; Stephens, Ifan E.L.

    2017-01-01

    Platinum-lanthanide alloys are very promising as active and stable catalysts for the oxygen reduction reaction (ORR) in low-temperature fuel cells. We have fabricated Pt and Pt5Gd metallic thin films via (co-)sputtering deposition in an ultra-high vacuum (UHV) chamber. The electrochemical ORR...

  14. Sputtering of amorphous carbon layers studied by laser induced fluorescence

    International Nuclear Information System (INIS)

    Pasch, E.

    1992-07-01

    In order to minimize the radiation losses, it is desirable to keep the plasmas in nuclear fusion devices free of high-Z-impurities. Therefore, the walls of TEXTOR and other tokamaks are covered with thin layers of amorphous carbon layers (a-C:H) or amorphous carbon/boron layers (a-C/B:H). The sputtering behaviour of these layers has been studied under bombardment by Ar + ions with energies of 1.5 keV and current densities of a few mA/cm 2 . Investigations of these coatings were carried out with the object to measure the velocity distribution of the sputtered atoms and the sputtered yields by laser induced fluorescence in the vacuum ultraviolet. (orig.)

  15. Experimental research for vacuum gap breakdown in high voltage multi-pulse

    International Nuclear Information System (INIS)

    Huang Ziping; He Jialong; Chen Sifu; Deng Jianjun; Wang Liping

    2008-01-01

    Base on the breakdown theory of vacuum gaps, experiments have been done to find out the breakdown electric field intensities in high voltage single-and triple-pulse for 26 vacuum gaps with different shapes. The experimental results match up to the theory and confirm the effect of the pulse-number increase on the breakdown electric field intensity. The key point to decide the macroscopical breakdown electric field intensity of a vacuum gap has been pointed out with some advises about the design of a multi-pulse linear inductive accelerator's accelerate gap. (authors)

  16. A study of some features of the ultra high vacuum systems for EPIC

    International Nuclear Information System (INIS)

    Elsey, R.J.; Bennett, J.R.J.; Dossett, A.J.

    1977-01-01

    This report covers the experimental work carried out towards the development of the ultra high vacuum for the proposed electron positron storage ring, EPIC. Experiments included outgassing tests on samples of materials and pump-down tests on full scale aluminium vessels. The effect of baking was investigated. The approval of the similar machine PETRA at Hamburg and the subsequent withdrawal of the EPIC proposal in October 1975 curtailed the vacuum work. The experiments reported here are therefore incomplete, but nevertheless proved useful in showing that there should have been no major problems with building the vacuum system for EPIC. (author)

  17. A high current metal vapour vacuum arc ion source for ion implantation studies

    International Nuclear Information System (INIS)

    Evans, P.J.; Noorman, J.T.; Watt, G.C.; Cohen, D.D.; Bailey, G.M.

    1989-01-01

    The main features of the metal vapour vacuum arc(MEVA) as an ion source are presented. The technology utilizes the plasma production capabilities of a vacuum arc cathode. Some of the ions produced in this discharge flow through the anode and the 3 extraction grids to form an extracted ion beam. The high beam current and the potential for generating broad beams, make this technology suitable for implantation of large surface areas. The composition of the vacuum arc cathode determines the particular ions obtained from the MEVA source. 3 refs., 1 tab., 2 figs

  18. LHCb: Design of a Highly Optimised Vacuum Chamber Support for the LHCb Experiment

    CERN Multimedia

    Leduc, L; Veness, R

    2011-01-01

    The beam vacuum chamber in the LHCb experimental area passes through the centre of a large aperture dipole magnet. The vacuum chamber and all its support systems lie in the acceptance of the detector, so must be highly optimised for transparency to particles. As part of the upgrade programme for the LHCb vacuum system, the support system has been re-designed using advanced lightweight materials. In this paper we discuss the physics motivation for the modifications, the criteria for the selection of materials and tests performed to qualify them for the particular environment of a particle physics experiment. We also present the design of the re-optimised support system.

  19. The vacuum system for the PEP II high energy ring straight sections

    International Nuclear Information System (INIS)

    Wienands, U.; Daly, E.; Heifets, S.A.; Kulikov, A.; Kurita, N.; Nordby, M.; Perkins, C.; Reuter, E.; Seeman, J.T.; Belser, F.C.; Berg, J.; Holdener, F.R.; Kerns, J.A.; McDaniel, M.R.; Stoeffl, W.

    1995-01-01

    The six straight sections of the PEP II High Energy Ring (HER) serve various functions: lattice tuning, beam injection and abort, providing space for rf cavities, longitudinal and transverse feedback, beam diagnostics and the interaction point. A stainless steel vacuum system has been designed; prototypes are currently being built. Cooling is required due to radiation coming from the last arc dipole and resistive losses in the vacuum chamber. Although the nominal beam current of the HER is 1 A the vacuum system is designed for 3 A to provide margin and an upgrade path. 5 refs., 7 figs

  20. Influence of a high vacuum on the precise positioning using an ultrasonic linear motor.

    Science.gov (United States)

    Kim, Wan-Soo; Lee, Dong-Jin; Lee, Sun-Kyu

    2011-01-01

    This paper presents an investigation of the ultrasonic linear motor stage for use in a high vacuum environment. The slider table is driven by the hybrid bolt-clamped Langevin-type ultrasonic linear motor, which is excited with its different modes of natural frequencies in both lateral and longitudinal directions. In general, the friction behavior in a vacuum environment becomes different from that in an environment of atmospheric pressure and this difference significantly affects the performance of the ultrasonic linear motor. In this paper, to consistently provide stable and high power of output in a high vacuum, frequency matching was conducted. Moreover, to achieve the fine control performance in the vacuum environment, a modified nominal characteristic trajectory following control method was adopted. Finally, the stage was operated under high vacuum condition, and the operating performances were investigated compared with that of a conventional PI compensator. As a result, robustness of positioning was accomplished in a high vacuum condition with nanometer-level accuracy.

  1. Influence of a high vacuum on the precise positioning using an ultrasonic linear motor

    International Nuclear Information System (INIS)

    Kim, Wan-Soo; Lee, Dong-Jin; Lee, Sun-Kyu

    2011-01-01

    This paper presents an investigation of the ultrasonic linear motor stage for use in a high vacuum environment. The slider table is driven by the hybrid bolt-clamped Langevin-type ultrasonic linear motor, which is excited with its different modes of natural frequencies in both lateral and longitudinal directions. In general, the friction behavior in a vacuum environment becomes different from that in an environment of atmospheric pressure and this difference significantly affects the performance of the ultrasonic linear motor. In this paper, to consistently provide stable and high power of output in a high vacuum, frequency matching was conducted. Moreover, to achieve the fine control performance in the vacuum environment, a modified nominal characteristic trajectory following control method was adopted. Finally, the stage was operated under high vacuum condition, and the operating performances were investigated compared with that of a conventional PI compensator. As a result, robustness of positioning was accomplished in a high vacuum condition with nanometer-level accuracy.

  2. Antimicrobial brass coatings prepared on poly(ethylene terephthalate) textile by high power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Ying-Hung, E-mail: tieamo2002@gmail.com; Wu, Guo-Wei; He, Ju-Liang

    2015-03-01

    The goal of this work is to prepare antimicrobial, corrosion-resistant and low-cost Cu65Zn35 brass film on poly(ethylene terephthalate) (PET) fabric by high-power impulse magnetron sputtering (HIPIMS), which is known to provide high-density plasma, so as to generate a strongly adherent film at a reduced substrate temperature. The results reveal that the brass film grows in a layer-plus-island mode. Independent of their deposition time, the obtained films retain a Cu/Zn elemental composition ratio of 1.86 and exhibit primarily an α copper phase structure. Oxygen plasma pre-treatment for 1 min before coating can significantly increase film adhesion such that the brass-coated fabric of Grade 5 or Grade 4–5 can ultimately be obtained under dry and wet rubbing tests, respectively. However, a deposition time of 1 min suffices to provide effective antimicrobial properties for both Staphylococcus aureus and Escherichia coli. As a whole, the feasibility of using such advanced HIPIMS coating technique to develop durable antimicrobial textile was demonstrated. - Highlights: • Prepare antimicrobial, corrosion-resistant and low-cost Cu65Zn35 brass film on PET fabric by HIPIMS • Brass-coated fabric with excellent durability, even undergone rubbing and washing tests • Brass-coated fabric provides effective antimicrobial properties for E. coli and S. aureus. • After brass coating, PET fabric still retained its mechanical property.

  3. Effects of target bias voltage on indium tin oxide films deposited by high target utilisation sputtering

    International Nuclear Information System (INIS)

    Calnan, Sonya; Upadhyaya, Hari M.; Dann, Sandra E.; Thwaites, Mike J.; Tiwari, Ayodhya N.

    2007-01-01

    Indium tin oxide (ITO) films were deposited by reactive High Target Utilisation Sputtering (HiTUS) onto glass and polyimide substrates. The ion plasma was generated by an RF power source while the target bias voltage was varied from 300 V to 500 V using a separate DC power supply. The deposition rate, at constant target power, increased with DC target voltage due to increased ion energy reaching 34 nm/min at 500 V. All the films were polycrystalline and showed strong (400) and (222) reflections with the relative strength of latter increasing with target bias voltage. The resistivity was lowest at 500 V with values of 1.8 x 10 -4 Ω cm and 2.4 x 10 -4 Ω cm on glass and polyimide, respectively but was still less than 5 x 10 -4 Ω cm at 400 V. All films were highly transparent to visible light, (> 80%) but the NIR transmittance decreased with increasing target voltage due to higher free carrier absorption. Therefore, ITO films can be deposited onto semiconductor layers such as in solar cells, with minimal ion damage while maintaining low resistivity

  4. Investigation and optimization of the magnetic field configuration in high-power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Yu, He; Meng, Liang; Szott, Matthew M; Meister, Jack T; Cho, Tae S; Ruzic, David N

    2013-01-01

    An effort to optimize the magnetic field configuration specifically for high-power impulse magnetron sputtering (HiPIMS) was made. Magnetic field configurations with different field strengths, race track widths and race track patterns were designed using COMSOL. Their influence on HiPIMS plasma properties was investigated using a 36 cm diameter copper target. The I–V discharge characteristics were measured. The temporal evolution of electron temperature (T e ) and density (n e ) was studied employing a triple Langmuir probe, which was also scanned in the whole discharge region to characterize the plasma distribution and transport. Based on the studies, a closed path for electrons to drift along was still essential in HiPIMS in order to efficiently confine electrons and achieve a high pulse current. Very dense plasmas (10 19 –10 20 m −3 ) were generated in front of the race tracks during the pulse, and expanded downstream afterwards. As the magnetic field strength increased from 200 to 800 G, the expansion became faster and less isotropic, i.e. more directional toward the substrate. The electric potential distribution accounted for these effects. Varied race track widths and patterns altered the plasma distribution from the target to the substrate. A spiral-shaped magnetic field design was able to produce superior plasma uniformity on the substrate in addition to improved target utilization. (paper)

  5. Structural and dielectric characterization of sputtered Tantalum Titanium Oxide thin films for high temperature capacitor applications

    Energy Technology Data Exchange (ETDEWEB)

    Rouahi, A., E-mail: rouahi_ahlem@yahoo.fr [Univ. Grenoble Alpes, G2Elab, F-38000 (France); Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Challali, F. [Laboratoire des Sciences des Procédés et des Matériaux (LSPM)-CNRS-UPR3407, Université Paris13, 99 Avenue Jean-Baptiste Clément, 93430, Villetaneuse (France); Dakhlaoui, I. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Vallée, C. [CNRS, LTM, CEA-LETI, F-38000 Grenoble (France); Salimy, S. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Jomni, F.; Yangui, B. [Laboratoire Matériaux Organisation et Propriétés (LMOP), Université de Tunis El Manar, 2092 Tunis (Tunisia); Besland, M.P.; Goullet, A. [Institut des Matériaux Jean Rouxel (IMN) UMR CNRS 6502, Université de Nantes, 2, rue de la Houssinière, B.P. 32229, 44322, Nantes, Cedex 3 (France); Sylvestre, A. [Univ. Grenoble Alpes, G2Elab, F-38000 (France)

    2016-05-01

    In this study, the dielectric properties of metal-oxide-metal capacitors based on Tantalum Titanium Oxide (TiTaO) thin films deposited by reactive magnetron sputtering on aluminum bottom electrode are investigated. The structure of the films was characterized by Atomic Force Microscopy, X-ray diffraction and X-ray photoelectron spectroscopy. The dielectric properties of TiTaO thin films were studied by complex impedance spectroscopy over a wide frequency range (10{sup -2} - to 10{sup 5} Hz) and temperatures in -50 °C to 325 °C range. The contributions of different phases, phases’ boundaries and conductivity effect were highlighted by Cole – Cole diagram (ε” versus ε’). Two relaxation processes have been identified in the electric modulus plot. A first relaxation process appears at low temperature with activation energy of 0.37 eV and it is related to the motion of Ti{sup 4+} (Skanavi’s model). A second relaxation process at high temperature is related to Maxwell-Wagner-Sillars relaxation with activation energy of 0.41 eV. - Highlights: • Titanium Tantalum Oxide thin films are grown on Aluminum substrate. • The existence of phases was confirmed by X-ray photoelectron spectroscopy. • Conductivity effect appears in Cole-Cole plot. • At low temperatures, a relaxation phenomenon obeys to Skanavi’s model. • Maxwell-Wagner-Sillars polarization is processed at high temperatures.

  6. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Science.gov (United States)

    Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

    2015-01-01

    High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS) analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  7. Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

    Directory of Open Access Journals (Sweden)

    Chao-Ming Hsu

    2015-05-01

    Full Text Available High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the SEM observations, all of the deposited IGZO thin films showed a very smooth and featureless surface. From the measurements of XRD patterns, only the amorphous structure was observed. We aimed to show that the deposition power of GZO ceramic target had large effect on the Eg values, Hall mobility, carrier concentration, and resistivity of IGZO thin films. Secondary ion mass spectrometry (SIMS analysis in the thicknesses’ profile of IGZO thin films found that In and Ga elements were uniform distribution and Zn element were non-uniform distribution. The SIMS analysis results also showed the concentrations of Ga and Zn elements increased and the concentrations of In element was almost unchanged with increasing deposition power.

  8. A high-intensity plasma-sputter heavy negative ion source

    International Nuclear Information System (INIS)

    Alton, G.D.; Mori, Y.; Takagi, A.; Ueno, A.; Fukumoto, S.

    1989-01-01

    A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may also be used to produce high-intensity (mA) dc beams. The results of these investigations are given, as well, and the technical issues that must be addressed for this mode of operation are discussed. 15 refs., 10 figs., 2 tabs

  9. Antimicrobial brass coatings prepared on poly(ethylene terephthalate) textile by high power impulse magnetron sputtering

    International Nuclear Information System (INIS)

    Chen, Ying-Hung; Wu, Guo-Wei; He, Ju-Liang

    2015-01-01

    The goal of this work is to prepare antimicrobial, corrosion-resistant and low-cost Cu65Zn35 brass film on poly(ethylene terephthalate) (PET) fabric by high-power impulse magnetron sputtering (HIPIMS), which is known to provide high-density plasma, so as to generate a strongly adherent film at a reduced substrate temperature. The results reveal that the brass film grows in a layer-plus-island mode. Independent of their deposition time, the obtained films retain a Cu/Zn elemental composition ratio of 1.86 and exhibit primarily an α copper phase structure. Oxygen plasma pre-treatment for 1 min before coating can significantly increase film adhesion such that the brass-coated fabric of Grade 5 or Grade 4–5 can ultimately be obtained under dry and wet rubbing tests, respectively. However, a deposition time of 1 min suffices to provide effective antimicrobial properties for both Staphylococcus aureus and Escherichia coli. As a whole, the feasibility of using such advanced HIPIMS coating technique to develop durable antimicrobial textile was demonstrated. - Highlights: • Prepare antimicrobial, corrosion-resistant and low-cost Cu65Zn35 brass film on PET fabric by HIPIMS • Brass-coated fabric with excellent durability, even undergone rubbing and washing tests • Brass-coated fabric provides effective antimicrobial properties for E. coli and S. aureus. • After brass coating, PET fabric still retained its mechanical property

  10. A High-Intensity, RF Plasma-Sputter Negative Ion Source

    International Nuclear Information System (INIS)

    Alton, G.D.; Bao, Y.; Cui, B.; Lohwasser, R.; Reed, C.A.; Zhang, T.

    1999-01-01

    A high-intensity, plasma-sputter negative-ion source based on the use of RF power for plasma generation has been developed that can be operated in either pulsed or dc modes. The source utilizes a high-Q, self-igniting, inductively coupled antenna system, operating at 80 MHz that has been optimized to generate Cs-seeded plasmas at low pressures (typically, - (610 microA); F - (100 microA); Si - (500 microA); S - (500 microA); P - (125 microA); Cl - (200 microA); Ni - (150 microA); Cu - (230 microA); Ge - (125 microA); As - (100 microA); Se - (200 microA); Ag - (70 microA); Pt - (125 microA); Au - (250 microA). The normalized emittance var e psilon n of the source at the 80% contour is: var e psilon n = 7.5 mm.mrad.(MeV) 1/2 . The design principles of the source, operational parameters, ion optics, emittance and intensities for a number of negative-ion species will be presented in this report

  11. Vacuum deposition of high quality metal films on porous substrates

    International Nuclear Information System (INIS)

    Barthell, B.L.; Duchane, D.V.

    1982-01-01

    A composite mandrel has been developed consisting of a core of low density polymethylpentene foam overcoated with a thin layer of film-forming polymer. The surface tension and viscosity of the coating solution are important parameters in obtaining a polymer film which forms a continuous, smooth skin over the core without penetrating into the foam matrix. Water soluble film formers with surface tensions in the range of 45 dyn/cm and minimum viscosities of a few hundred centipoises have been found most satisfactory for coating polymethylpentene foam. By means of this technique, continuous polymer fims with thicknesses of 10--20 μm have been formed on the surface of machined polymethylpentene foam blanks. Aluminum has been vacuum deposited onto these composite mandrels to produce metal films which appear smooth and generally defect free even at 10 000 times magnification

  12. Cooling and manipulation of nanoparticles in high vacuum

    Science.gov (United States)

    Millen, J.; Kuhn, S.; Patolsky, F.; Kosloff, A.; Arndt, M.

    2016-09-01

    Optomechanical systems, where the mechanical motion of objects is measured and controlled using light, have a huge range of applications, from the metre-scale mirrors of LIGO which detect gravitational waves, to micron scale superconducting systems that can transduce quantum signals. A fascinating addition to this field are free or levitated optomechanical systems, where the oscillator is not physically tethered. We study a variety of nanoparticles which are launched through vacuum (10-8 mbar) and interact with an optical cavity. The centre of mass motion of a nanoparticle can be cooled by the optical cavity field. It is predicted that the quantum ground state of motion can be reached, leaving the particle free to evolve after release from the light field, thus preparing nanoscale matter for quantum interference experiments.

  13. Upgrade of RHIC Vacuum Systems for High Luminosity Operation

    CERN Document Server

    Hseuh Hsiao Chaun; Smart, Loralie; Todd, Robert J; Weiss, Daniel

    2005-01-01

    With increasing ion beam intensity during recent RHIC operations, pressure rises of several decades were observed at most room temperature sections and at a few cold sections. The pressure rises are associated with electron multi-pacting, electron stimulated desorption and beam ion induced desorption and have been one of the major intensity and luminosity limiting factors for RHIC. Improvement of the warm sections has been carried out in the last few years. Extensive in-situ bakes, additional UHV pumping, anti-grazing ridges and beam tube solenoids have been implemented. Several hundred meters of NEG coated beam pipes have been installed and activated. Vacuum monitoring and interlock were enhanced to reduce premature beam aborts. Preliminary measures, such as pumping before cool down to reduce monolayer condensates, were also taken to suppress the pressure rises in the cold sections. The effectiveness of these measures in reducing the pressure rises during machine studies and during physics runs are discussed...

  14. Development of high pressure-high vacuum-high conductance piston valve for gas-filled radiation detectors

    International Nuclear Information System (INIS)

    Prasad, D N; Ayyappan, R; Kamble, L P; Singh, J P; Muralikrishna, L V; Alex, M; Balagi, V; Mukhopadhyay, P K

    2008-01-01

    Gas-filled radiation detectors need gas filling at pressures that range from few cms of mercury to as high as 25kg/cm 2 at room temperature. Before gas-filling these detectors require evacuation to a vacuum of the order of ∼1 x 10 -5 mbar. For these operations of evacuation and gas filling a system consisting of a vacuum pump with a high vacuum gauge, gas cylinder with a pressure gauge and a valve is used. The valve has to meet the three requirements of compatibility with high-pressure and high vacuum and high conductance. A piston valve suitable for the evacuation and gas filling of radiation detectors has been designed and fabricated to meet the above requirements. The stainless steel body (80mmx160mm overall dimensions) valve with a piston arrangement has a 1/2 inch inlet/outlet opening, neoprene/viton O-ring at piston face and diameter for sealing and a knob for opening and closing the valve. The piston movement mechanism is designed to have minimum wear of sealing O-rings. The valve has been hydrostatic pressure tested up to 75bars and has Helium leak rate of less than 9.6x10 -9 m bar ltr/sec in vacuum mode and 2x10 -7 mbar ltr/sec in pressure mode. As compared to a commercial diaphragm valve, which needed 3 hours to evacuate a 7 litre chamber to 2.5x10 -5 mbar, the new valve achieved vacuum 7.4x10 -6 mbar in the same time under the same conditions

  15. ELETTRA vacuum system

    International Nuclear Information System (INIS)

    Bernardini, M.; Daclon, F.; Giacuzzo, F.; Miertusova, J.; Pradal, F.; Kersevan, R.

    1993-01-01

    Elettra is a third-generation synchrotron light source which is being built especially for the use of high brilliance radiation from insertion devices and bending magnets. The UHV conditions in a storage ring lead to a longer beam lifetime - one of the most important criterion. The Elettra vacuum system presents some pecularities which cannot be found in any already existing machine. The final version of bending magnet vacuum chamber is presented. After chemical and thermal conditioning the specific outgassing rate of about 1.5e-12 Torr. liters sec -1 cm -2 was obtained. A microprocessor-controlled system has been developed to perform bake-out at the uniform temperature. The etched-foil type heaters are glued to the chamber and Microtherm insulation is used. UHV pumps based on standard triode sputter-ion pumps were modified with ST 707 NEG (Non Evaporable Getter) modules. A special installation enables the resistive activation of getters and significantly increases pumping speed for hydrogen and other residual gases (except methane and argon). All these technological innovations improve vacuum conditions in Elettra storage ring and consequently also the other parameters of the light source

  16. Sputtering and inelastic processes

    International Nuclear Information System (INIS)

    Baranov, I.A.; Tsepelevic, S.O.

    1987-01-01

    Experimental data and models of a new type of material sputtering with ions of relatively high energies due to inelastic (electron) processes are reviewed. This area of investigations began to develop intensively during the latest years. New experimental data of the authors on differential characteristics of ultradisperse gold and americium dioxide layers with fission fragments are given as well. Practical applications of the new sputtering type are considered as well as setup of possibl experiments at heavy multiply charged ion accelerators

  17. Vacuum Simulations in High Energy Accelerators and Distribution Properties of Continuous and Discrete Particle Motions

    OpenAIRE

    Aichinger, Ida; Larcher, Gerhard; Kersevan, Roberto

    2017-01-01

    The underlying thesis on mathematical simulation methods in application and theory is structured into three parts. The first part sets up a mathematical model capable of predicting the performance and operation of an accelerator’s vacuum system based on analytical methods. A coupled species-balance equation system describes the distribution of the gas dynamics in an ultra-high vacuum system considering impacts of conductance limitations, beam induced effects (ion-, electron-, and photon-induc...

  18. Process of treating carbonaceous materials. [400 to 700/sup 0/C, high vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Parker, O J

    1913-11-24

    A process is given of treating carbonaceous materials, characterized by the material being submitted simultaneously to a temperature of 400 to 700/sup 0/C, a pressure between 5.0 mm of mercury under atmospheric and a practically perfect vacuum, and by the volatile material able to condense under the vacuum used being condensed practically under the same pressure for the production of a high proportion of condensable products and a superior fuel.

  19. High-rate sputter deposition of NiAl on sapphire fibers

    Energy Technology Data Exchange (ETDEWEB)

    Reichert, K.; Martinez, C.; Cremer, R.; Neuschuetz, D. [Lehrstuhl fuer Theoretische Huettenkunde, RWTH Aachen, Aachen (Germany)

    2002-07-01

    Once the fiber-matrix bonding has been optimized to meet the different requirements during fabrication and operation of the later composite component, sapphire fiber reinforced NiAl will be a potential candidate to substitute conventional superalloys as structural material for gas turbine blades. To improve the composite fabrication process, a direct deposition of the intermetallic matrix material onto hBN coated sapphire fibers prior to the consolidation of the fiber-matrix composite is proposed. It is believed that this will simplify the fabrication process and prevent pore formation during the diffusion bonding. In addition, the fiber volume fraction can be quite easily adjusted by varying the NiAl coating thickness. For this, a high-rate deposition of NiAl is in any case necessary. It has been achieved by a pulsed DC magnetron sputtering of combined Al-Ni targets with the fibers rotating between the two facing cathodes. The obtained nickel aluminide coatings were analyzed as to structure and composition by means of X-ray (GIXRD) as well as electron diffraction (RHEED) and X-ray photoelectron spectroscopy (XPS), respectively. The morphology of the NiAl coatings was examined by SEM. (orig.)

  20. Ambipolar SnOx thin-film transistors achieved at high sputtering power

    Science.gov (United States)

    Li, Yunpeng; Yang, Jia; Qu, Yunxiu; Zhang, Jiawei; Zhou, Li; Yang, Zaixing; Lin, Zhaojun; Wang, Qingpu; Song, Aimin; Xin, Qian

    2018-04-01

    SnO is the only oxide semiconductor to date that has exhibited ambipolar behavior in thin-film transistors (TFTs). In this work, ambipolar behavior was observed in SnOx TFTs fabricated at a high sputtering power of 200 W and post-annealed at 150-250 °C in ambient air. X-ray-diffraction patterns showed polycrystallisation of SnO and Sn in the annealed SnOx films. Scanning-electron-microscopy images revealed that microgrooves appeared after the films were annealed. Clusters subsequently segregated along the microgrooves, and our experiments suggest that they were most likely Sn clusters. Atomic force microscopy images indicate an abrupt increase in film roughness due to the cluster segregations. An important implication of this work is that excess Sn in the film, which has generally been thought to be detrimental to the film quality, may promote the ambipolar conduction when it is segregated from the film to enhance the stoichiometric balance.

  1. Vacuum-integrated electrospray deposition for highly reliable polymer thin film.

    Science.gov (United States)

    Park, Soohyung; Lee, Younjoo; Yi, Yeonjin

    2012-10-01

    Vacuum electrospray deposition (ESD) equipment was designed to prepare polymer thin films. The polymer solution can be injected directly into vacuum system through multi-stage pumping line, so that the solvent residues and ambient contaminants are highly reduced. To test the performance of ESD system, we fabricated organic photovoltaic cells (OPVCs) by injecting polymer solution directly onto the substrate inside a high vacuum chamber. The OPVC fabricated has the structure of Al∕P3HT:PCBM∕PEDOT:PSS∕ITO and was optimized by varying the speed of solution injection and concentration of the solution. The power conversion efficiency (PCE) of the optimized OPVC is 3.14% under AM 1.5G irradiation without any buffer layer at the cathode side. To test the advantages of the vacuum ESD, we exposed the device to atmosphere between the deposition steps of the active layer and cathode. This showed that the PCE of the vacuum processed device is 24% higher than that of the air exposed device and confirms the advantages of the vacuum prepared polymer film for high performance devices.

  2. Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

    Energy Technology Data Exchange (ETDEWEB)

    Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

    2015-09-15

    Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

  3. Impedimetric Thiourea Sensing in Copper Electrorefining Bath based on DC Magnetron Sputtered Nanosilver as Highly Uniform Transducer

    International Nuclear Information System (INIS)

    Mozaffari, S.A.; Amoli, H. Salar; Simorgh, S.; Rahmanian, R.

    2015-01-01

    Highlights: • Fabrication of a novel disposable impedimetric thiourea sensor based on nanostructured Ag film transducer. • Exploiting sputtering as a high-tech method for preparation of highly uniform nanostructured Ag film. • A wonderful combination of nanostructured Ag film and carbon paper substrate as remarkably stable and reproducible sensor for thiourea detection in copper electrorefining bath. • Application of impedimetric assessment for thiourea monitoring due to its rapidity, sensitivity, and repeatability. - Abstract: Highly uniform sputtered nanostructured silver (Nano-Ag) film on the conductive carbon paper (CP) substrate (Nano-Ag/CP) was applied as a novel approach for thiourea (TU) measurement in copper electrorefining bath. Nano-Ag film was achieved by direct current (DC) magnetron sputtering system at the optimized instrumental deposition conditions. Characterization of the surface structure of Nano-Ag film by field emission-scanning electron microscopy (FE-SEM), exhibits uniform Nano-Ag film as an effective transducer for TU sensing. Step by step monitoring of Nano-Ag/CP electrode fabrication were performed using electrochemical methods such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques. Fabricated Nano-Ag/CP electrode was used for TU determination using EIS assessment. The impedimetric results show high sensitivity for TU sensing within 2.0–250 ppm.

  4. Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Straňák, V.; Hubička, Zdeněk; Čada, Martin; Bogdanowicz, R.; Wulff, H.; Helm, C.A.; Hippler, R.

    2018-01-01

    Roč. 51, č. 9 (2018), s. 1-12, č. článku 095205. ISSN 0022-3727 R&D Projects: GA ČR GA17-08389S Institutional support: RVO:68378271 Keywords : high power impulse magnetron sputtering (HiPIMS) * iron oxide thin films * wüstite * magnetite * maghemite * hematite Subject RIV: BL - Plasma and Gas Discharge Physics OBOR OECD: Fluids and plasma physics (including surface physics ) Impact factor: 2.588, year: 2016

  5. Features of copper coatings growth at high-rate deposition using magnetron sputtering systems with a liquid metal target

    Czech Academy of Sciences Publication Activity Database

    Bleykher, G.A.; Borduleva, A.O.; Yuryeva, A.V.; Krivobokov, V.P.; Lančok, Ján; Bulíř, Jiří; Drahokoupil, Jan; Klimša, Ladislav; Kopeček, Jaromír; Fekete, Ladislav; Čtvrtlík, Radim; Tomáštík, Jan

    2017-01-01

    Roč. 324, Sep (2017), s. 111-120 ISSN 0257-8972 R&D Projects: GA MŠk LO1409; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : magnetron sputtering * evaporation * high-rate coating deposition * coating properties * Cu coatings Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 2.589, year: 2016

  6. A highly miniaturized vacuum package for a trapped ion atomic clock

    Energy Technology Data Exchange (ETDEWEB)

    Schwindt, Peter D. D., E-mail: pschwin@sandia.gov; Jau, Yuan-Yu; Partner, Heather; Casias, Adrian; Wagner, Adrian R.; Moorman, Matthew; Manginell, Ronald P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Kellogg, James R.; Prestage, John D. [Jet Propulsion Laboratory, Pasadena, California 91109 (United States)

    2016-05-15

    We report on the development of a highly miniaturized vacuum package for use in an atomic clock utilizing trapped ytterbium-171 ions. The vacuum package is approximately 1 cm{sup 3} in size and contains a linear quadrupole RF Paul ion trap, miniature neutral Yb sources, and a non-evaporable getter pump. We describe the fabrication process for making the Yb sources and assembling the vacuum package. To prepare the vacuum package for ion trapping, it was evacuated, baked at a high temperature, and then back filled with a helium buffer gas. Once appropriate vacuum conditions were achieved in the package, it was sealed with a copper pinch-off and was subsequently pumped only by the non-evaporable getter. We demonstrated ion trapping in this vacuum package and the operation of an atomic clock, stabilizing a local oscillator to the 12.6 GHz hyperfine transition of {sup 171}Y b{sup +}. The fractional frequency stability of the clock was measured to be 2 × 10{sup −11}/τ{sup 1/2}.

  7. Collision experiment on highly ionized ions using vacuum spark source

    International Nuclear Information System (INIS)

    Takagi, S.; Ohtani, S.; Kadota, K.; Fujita, J.

    1982-03-01

    Cross sections for one-electron capture by Fe 6 + in H 2 are measured below 10 keV by using a vacuum spark ion source. It is found that the cross sections show little dependence on the collision energy and this value is about 6 x 10 - 15 cm 2 . This ion source, which has no electrode for ion extraction, can produce ions from several hundreds eV to several tens of keV and the maximum charge state of 16 in Fe at 125J discharge energy. With ion selection system of 2.7 m time-of-flight and an electrostatic analyzer of 1% resolving power, 10 2 - 10 3 ions/pulse are obtained. Because of poor reproducibility of ion beam, charge-transferred ions and unreacted ions are measured simultaneously with a microchannel plate which has two anodes behind. By utilizing the feature of pulsed ion beam and this ion selection system, it is possible to obtain cross sections for various charge states of ions simultaneously. (author)

  8. Vacuum interrupters used for the interruption of high dc currents

    International Nuclear Information System (INIS)

    Warren, R.W.

    1977-01-01

    Conventional ac vacuum interrupters are being used to interrupt currents in pulsed energy storage systems. They have been tested with dc currents of up to 37 kA. The limit to the current which can be successfully interrupted has been measured as a function of various parameters. Among these are (1) the size of the interrupter, (2) the magnitude of the counterpulse current, (3) the nature and flux rating of the saturable reactor used, and (4) the kind of ''snubber'' circuit used. Fragmentary data have also been collected on electrode erosion rates and on mechanical failure of the bellows. A description is given of the circuits used in these tests and of the results found for a representative selection of the commercially available domestic interrupters. More recently efforts have been made to increase the values found for the maximum interruptible current. The techniques used have included connecting interrupters in parallel and operating them in an impressed axial magnetic field. The results of this work are discussed

  9. Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

    Directory of Open Access Journals (Sweden)

    Hüpkes J.

    2011-10-01

    Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

  10. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  11. Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaoli; Jin, Jie [Tianjin University, School of Electronic Information Engineering, Tianjin (China); Cheng, Jui-Ching, E-mail: juiching@ntut.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lee, Jyh-Wei [Ming Chi University of Technology, College of Materials Engineering, New Taipei City, Taiwan (China); Wu, Kuo-Hong [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lin, Kuo-Cheng; Tsai, Jung-Ruey [Asia University, Department of Photonics and Communication Engineering, Taichung, Taiwan (China); Liu, Kou-Chen, E-mail: jacobliu@mail.cgu.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China)

    2014-11-03

    Zirconia films are deposited by reactive high power impulse magnetron sputtering (HiPIMS) technology on glass and indium-tin-oxide (ITO)/glass substrates. Preparation, microstructure and optical characteristics of the films have been studied. During deposition, the influence of the target power and duty cycle on the peak current–voltage and power density has been observed in oxide mode. Transparent thin films under different oxygen proportions are obtained on the two substrates. Atomic force microscopy measurements showed that the surface roughness of the films was lower by reactive HiPIMS than DC sputtering for all oxygen contents. The transmission and reflectance properties of differently grown zirconia films were also investigated using an ultraviolet–visible spectrophotometer. The optical transmittance of films grown on glass substrates by HiPIMS reached maximum values above 90%, which exceeded that by DC sputtering. The band edge near 5.86 eV shifted to a lower wavelength for zirconia films prepared with oxygen flow rates lower than 4.5 sccm. For the films prepared on ITO/glass substrates, the transmittance and the band gap of zirconia films were limited by ITO films; a maximum average transmittance of 84% was obtained at 4.5 sccm O{sub 2} and the energy band gap was in the range of 3.7–3.8 eV for oxygen flow rates ranging from 3.5 to 5.0 sccm. Finally, the electrical properties of zirconia films have also been discussed. - Highlights: • Zirconia films are deposited by reactive high power impulse magnetron sputtering. • Low roughness films are obtained. • Films show a high transmittance (> 90%). • Films prepared on glass have a band gap of 5.9 eV.

  12. HIGH-TEMPERATURE VACUUM CEMENTATION – THE RESERVE TO REDUCE THE ENERGY INTENSITY OF MANUFACTURE AND IMPROVE THE QUALITY OF TRANSMISSIONS GEARWHEELS OF HIGH-ENERGY MACHINES

    OpenAIRE

    A. A. Shipko; S. P. Rudenko; A. L. Valko; A. N. Chichin

    2016-01-01

    Results of research of influence of high-temperature vacuum chemical heat treatment on the amount of grain structural steels are presented. The efficiency of hereditary fine-grained steel for high temperature vacuum carburizing are shown.

  13. HIGH-TEMPERATURE VACUUM CEMENTATION – THE RESERVE TO REDUCE THE ENERGY INTENSITY OF MANUFACTURE AND IMPROVE THE QUALITY OF TRANSMISSIONS GEARWHEELS OF HIGH-ENERGY MACHINES

    Directory of Open Access Journals (Sweden)

    A. A. Shipko

    2016-01-01

    Full Text Available Results of research of influence of high-temperature vacuum chemical heat treatment on the amount of grain structural steels are presented. The efficiency of hereditary fine-grained steel for high temperature vacuum carburizing are shown.

  14. ISR vacuum system

    CERN Multimedia

    CERN PhotoLab

    1971-01-01

    Some of the most important components of the vacuum system are shown. At the left, the rectangular box is a sputter-ion pump inside its bake-out oven. The assembly in the centre includes a sector valve, three roughing valves, a turbomolecular pump, a rotary backing pump and auxiliary equipment. At the right, the small elbow houses a Bayard-

  15. ISR vacuum system

    CERN Multimedia

    CERN PhotoLab

    1970-01-01

    A pressure of 5 x 10-11 Torr has been obtained repreatedly in this pilot section of the ISR vacuum system. The pilot section is 45 m long is pumped by 9 sputter-ion pumps pf 350 l/s pumping speed, and is baked out at 200 degrees C before each pump down.

  16. A modified high-intensity Cs sputter negative-ion source with multi-target mechanism

    International Nuclear Information System (INIS)

    Si Houzhi; Zhang Weizhong; Zhu Jinhau; Du Guangtian; Zhang Tiaorong; Gao Xiang

    1993-01-01

    The source is based on Middleton's high-intensity mode, but modified to a multi-target version. It is equipped with a spherical molybdenum ionizer, a 20-position target wheel and a vacuum lock for loading and unloading sample batches. A metal-ceramic bonded section protected by a specially designed labyrinth shielding system results in reliable insulation of the cathode and convenient control of cesium vapor. The latter is particularly important when an oversupply of cesium occurs. The source was developed for accelerator mass spectrometry (AMS) applications. Recently, three versions based on the prototype of the source have been successfully tested to meet different requirements: (a) Single target version, (b) multi-target version with manual sample change, and (c) multi-target version with remote control sample change. Some details of the technical and operational characteristics are presented. (orig.)

  17. High-rate reactive magnetron sputtering of zirconia films for laser optics applications

    International Nuclear Information System (INIS)

    Juskevicius, K.; Subacius, A.; Drazdys, R.; Juskenas, R.; Audronis, M.; Matthews, A.; Leyland, A.

    2014-01-01

    ZrO 2 exhibits low optical absorption in the near-UV range and is one of the highest laser-induced damage threshold (LIDT) materials; it is, therefore, very attractive for laser optics applications. This paper reports explorations of reactive sputtering technology for deposition of ZrO 2 films with low extinction coefficient k values in the UV spectrum region at low substrate temperature. A high deposition rate (64 % of the pure metal rate) process is obtained by employing active feedback reactive gas control which creates a stable and repeatable deposition processes in the transition region. Substrate heating at 200 C was found to have no significant effect on the optical ZrO 2 film properties. The addition of nitrogen to a closed-loop controlled process was found to have mostly negative effects in terms of deposition rate and optical properties. Open-loop O 2 gas-regulated ZrO 2 film deposition is slow and requires elevated (200 C) substrate temperature or post-deposition annealing to reduce absorption losses. Refractive indices of the films were distributed in the range n = 2.05-2.20 at 1,000 nm and extinction coefficients were in the range k = 0.6 x 10 -4 and 4.8 x 10 -3 at 350 nm. X-ray diffraction analysis showed crystalline ZrO 2 films consisted of monoclinic + tetragonal phases when produced in Ar/O 2 atmosphere and monoclinic + rhombohedral or a single rhombohedral phase when produced in Ar/O 2 + N 2 . Optical and physical properties of the ZrO 2 layers produced in this study are suitable for high-power laser applications in the near-UV range. (orig.)

  18. Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

    International Nuclear Information System (INIS)

    Li Dejie

    2002-01-01

    In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

  19. High-Transparency Sputtered In2O3 and ITO Films Containing Zirconium (Presentation)

    International Nuclear Information System (INIS)

    Gessert, T. A.; Yoshida, Y.; Fesenmaier, C. C.; Coutts, T. J.

    2007-01-01

    Our recent investigations have identified a method to produce ITO-like films that are less sensitive to variations in the oxygen-containing deposition ambient. Specifically, we are studying the effect of adding small amounts of Zr to both In2O3 and ITO ceramic sputtering targets

  20. Highly flexible indium zinc oxide electrode grown on PET substrate by cost efficient roll-to-roll sputtering process

    International Nuclear Information System (INIS)

    Park, Yong-Seok; Kim, Han-Ki; Jeong, Soon-Wook; Cho, Woon-Jo

    2010-01-01

    We have investigated the characteristics of flexible indium zinc oxide (IZO) electrode grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll (RTR) sputtering system for use in flexible optoelectronics. It was found that both electrical and optical properties of the flexible IZO electrode were critically dependent on the DC power and Ar/O 2 flow ratio during the roll-to-roll sputtering process. At optimized conditions (constant working pressure of 3 mTorr, Ar/O 2 flow ratio of Ar at only 30 sccm, DC power 800 W and rolling speed at 0.1 cm/s) the flexible IZO electrode exhibits a sheet resistance of 17.25 Ω/sq and an optical transmittance of 89.45% at 550 nm wavelength. Due to the low PET substrate temperature, which is effectively maintained by cooling drum system, all IZO electrodes showed an amorphous structure regardless of the DC power and Ar/O 2 flow ratio. Furthermore, the IZO electrodes grown at optimized condition exhibited superior flexibility than the conventional amorphous ITO electrodes due to its stable amorphous structure. This indicates that the RTR sputter grown IZO electrode is a promising flexible electrode that can substitute for the conventional ITO electrode, due to its low resistance, high transparency, superior flexibility and fast preparation by the RTR process.

  1. Vacuum mechatronics

    Science.gov (United States)

    Hackwood, Susan; Belinski, Steven E.; Beni, Gerardo

    1989-01-01

    The discipline of vacuum mechatronics is defined as the design and development of vacuum-compatible computer-controlled mechanisms for manipulating, sensing and testing in a vacuum environment. The importance of vacuum mechatronics is growing with an increased application of vacuum in space studies and in manufacturing for material processing, medicine, microelectronics, emission studies, lyophylisation, freeze drying and packaging. The quickly developing field of vacuum mechatronics will also be the driving force for the realization of an advanced era of totally enclosed clean manufacturing cells. High technology manufacturing has increasingly demanding requirements for precision manipulation, in situ process monitoring and contamination-free environments. To remove the contamination problems associated with human workers, the tendency in many manufacturing processes is to move towards total automation. This will become a requirement in the near future for e.g., microelectronics manufacturing. Automation in ultra-clean manufacturing environments is evolving into the concept of self-contained and fully enclosed manufacturing. A Self Contained Automated Robotic Factory (SCARF) is being developed as a flexible research facility for totally enclosed manufacturing. The construction and successful operation of a SCARF will provide a novel, flexible, self-contained, clean, vacuum manufacturing environment. SCARF also requires very high reliability and intelligent control. The trends in vacuum mechatronics and some of the key research issues are reviewed.

  2. Ultrasonic Spray Drying vs High Vacuum and Microwaves Technology for Blueberries

    Science.gov (United States)

    Candia-Muñoz, N.; Ramirez-Bunster, M.; Vargas-Hernández, Y.; Gaete-Garretón, L.

    Interest in high quality foods: good taste and a high content of nutrients with healthy beneficial effects are increasing. Fruits have good properties but, they are lost because the oxidation process, additionally, for different reasons a 40% of harvested fruit are lost. To conserve the fruit properties an ultrasonic assisted spray dryer was developed and tested, comparing its results with microwave-vacuum drying technology. Results did shown taste, color, smell, particle shape and size distribution better than the conventional one. The antioxidants conservation were quite good except in the anthocyanins, in which the microwave and vacuum technology shown best results.

  3. Changes in X-ray photoelectron spectra of yttria-tetragonal zirconia polycrystal by ion sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Watanabe, Eiko; Yoshinari, Masao [Tokyo Dental College, Oral Health Science Center, Tokyo, Chiyoda-ku (Japan)

    2016-04-15

    This paper reports changes in X-ray photoelectron spectroscopy spectra of yttria-tetragonal zirconia polycrystal (Y-TZP) brought about by Ar ion sputtering. The changes in the core-level spectra of Y-TZP suggest that preferential sputtering of oxygen occurred. A new peak was observed near 0 eV binding energy accompanied with changes in the core-level spectra by the sputtering. After 18 h in a high vacuum following the sputtering, the spectra changed by the sputtering were returned to their original shapes. In contrast, the color of Y-TZP was changed from white to pale brown by X-ray irradiation and was changed from pale brown to dark gray by ion sputtering. However, when the new peak near 0 eV decreased after 18 h, no color change was observed. Therefore, it is thought that the new peak was mainly derived from electrons trapped in various kinds of oxygen vacancies created by the sputtering in other than color centers. (orig.)

  4. Particle contamination in vacuum systems

    International Nuclear Information System (INIS)

    Martignac, J.; Bonin, B.; Henriot, C.; Poupeau, J.P.; Koltchakian, I.; Kocic, D.; Herbeaux, Ch.; Marx, J.P.

    1996-01-01

    Many vacuum devices, like RF cavities, are sensitive to particle contamination. This fact has motivated a considerable effort of cleanliness from the SRF community. The present paper reports the first results of a general study trying to identify the most contaminating steps during assembly and vacuum operation of the cavity. The steps investigated here are gasket assembly, evacuation and venting of the vacuum system, and operation of sputter ion pumps. (author)

  5. Particle contamination in vacuum systems

    International Nuclear Information System (INIS)

    Martignac, J.; Bonin, B.; Henriot, C.; Poupeau, J.P.; Koltchakian, I.; Kocic, D.; Herbeaux, Ch.; Marx, J.P.

    1996-01-01

    Many vacuum devices, like RF cavities, are sensitive to particle contamination. This fact has motivated a considerable effort of cleanliness from the SRF community. The first results of a general study trying to identify the most contaminating steps during assembly and vacuum operation of the cavity is reported. The steps investigated here are gasket assembly, evacuation and venting of the vacuum system, and operation of sputter ion pumps. (author)

  6. Ethanol production from food waste at high solids content with vacuum recovery technology.

    Science.gov (United States)

    Huang, Haibo; Qureshi, Nasib; Chen, Ming-Hsu; Liu, Wei; Singh, Vijay

    2015-03-18

    Ethanol production from food wastes does not only solve environmental issues but also provides renewable biofuels. This study investigated the feasibility of producing ethanol from food wastes at high solids content (35%, w/w). A vacuum recovery system was developed and applied to remove ethanol from fermentation broth to reduce yeast ethanol inhibition. A high concentration of ethanol (144 g/L) was produced by the conventional fermentation of food waste without a vacuum recovery system. When the vacuum recovery is applied to the fermentation process, the ethanol concentration in the fermentation broth was controlled below 100 g/L, thus reducing yeast ethanol inhibition. At the end of the conventional fermentation, the residual glucose in the fermentation broth was 5.7 g/L, indicating incomplete utilization of glucose, while the vacuum fermentation allowed for complete utilization of glucose. The ethanol yield for the vacuum fermentation was found to be 358 g/kg of food waste (dry basis), higher than that for the conventional fermentation at 327 g/kg of food waste (dry basis).

  7. Effect of osmotic dehydration and vacuum-frying parameters to produce high-quality mango chips.

    Science.gov (United States)

    Nunes, Yolanda; Moreira, Rosana G

    2009-09-01

    Mango (Mangifera indica L.) is a fruit rich in flavor and nutritional values, which is an excellent candidate for producing chips. The objective of this study was to develop high-quality mango chips using vacuum frying. Mango ("Tommy Atkins") slices were pretreated with different maltodextrin concentrations (40, 50, and 65, w/v), osmotic dehydration times (45, 60, and 70 min), and solution temperatures (22 and 40 degrees C). Pretreated slices were vacuum fried at 120, 130, and 138 degrees C and product quality attributes (oil content, texture, color, carotenoid content) determined. The effect of frying temperatures at optimum osmotic dehydration times (65 [w/v] at 40 degrees C) was assessed. All samples were acceptable (scores > 5) to consumer panelists. The best mango chips were those pretreated with 65 (w/v) concentration for 60 min and vacuum fried at 120 degrees C. Mango chips under atmospheric frying had less carotenoid retention (32%) than those under vacuum frying (up to 65%). These results may help further optimize vacuum-frying processing of high-quality fruit-based snacks.

  8. Fast-opening vacuum switches for high-power inductive energy storage

    International Nuclear Information System (INIS)

    Cooperstein, G.

    1988-01-01

    The subject of fast-opening vacuum switches for high-power inductive energy storage is emerging as an exciting new area of plasma science research. This opening switch technology, which generally involves the use of plasmas as the switching medium, is key to the development of inductive energy storage techniques for pulsed power which have a number of advantages over conventional capacitive techniques with regard to cost and size. This paper reviews the state of the art in this area with emphasis on applications to inductive storage pulsed power generators. Discussion focuses on fast-opening vacuum switches capable of operating at high power (≥10 12 W). These include plasma erosion opening switches, ion beam opening switches, plasma filled diodes, reflex diodes, plasma flow switches, and other novel vacuum opening switches

  9. "Physics Stories": How the Early Technologies of High Voltage and High Vacuum Led to "Modern Physics"

    Science.gov (United States)

    Greenslade, Thomas B.

    2018-05-01

    Some of you may remember the 1979 television series "Connections" that was written and narrated by James Burke, a British science writer. Burke's technique was to choose a number of seemingly unrelated ideas and show how they led to developments in science and technology. This is an enjoyable business, even if some of the connections seem to be stretched at times, and led to a book by Burke. In a number of talks that I have given over the years, I have made somewhat less fanciful connections that suggest how the technologies of high vacuum and high voltage led to what used to be called "modern physics." Today we might limit the "modern" era to the years from 1890 to 1920 that gave the first workable theories of small-scale physics.

  10. Visible luminescence from highly textured Tb{sup 3+} doped RF sputtered zinc oxide films

    Energy Technology Data Exchange (ETDEWEB)

    Sreedharan, R. Sreeja; Krishnan, R. Reshmi; Bose, R. Jolly; Kavitha, V.S.; Suresh, S. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Vinodkumar, R. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Department of Physics, University College, Thiruvananthapuram, Kerala (India); Sudheer, S.K. [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India); Pillai, V.P. Mahadevan, E-mail: vpmpillai9@gmail.com [Department of Optoelectronics, University of Kerala, Thiruvananthapuram 695581, Kerala (India)

    2017-04-15

    Highly transparent, luminescent, c-axis oriented Tb{sup 3+} doped ZnO films are prepared by RF magnetron sputtering technique. The structural, morphological, optical and luminescence properties of these films are investigated as a function of Tb{sup 3+} doping concentration by X-ray diffraction (XRD), micro-Raman spectroscopy, atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), spectroscopic ellipsometry, UV-Visible spectroscopy and photoluminescence spectroscopy. The as-deposited films are found to be highly crystalline with wurtzite hexagonal phase of ZnO. The characteristic features of hexagonal wurtzite structure of ZnO, particularly the appearance of non-polar E{sub 2} modes are easily identified from the Raman spectra of the films. The surface morphology of the films revealed by FESEM and AFM images present a dense distribution of grains. The elemental analysis carried out using energy dispersive X-ray (EDX) spectra confirms the incorporation of Tb{sup 3+} ions in the ZnO lattice. The films are highly transparent in the visible region. Using ellipsometric analysis, the variation of refractive index, dielectric constant and thickness of the films are studied as a function of Tb{sup 3+} doping concentration. The photoluminescence spectra of the Tb{sup 3+} doped ZnO films recorded using an excitation radiation of wavelength 325 nm from a He-Cd laser exhibit visible luminescence ~430, 490, 516 and 542 nm. The origin of visible emissions ~490 and 542 nm in the doped films can be attributed to 5D{sub 4}→7F{sub 6} and 5D{sub 4}→7F{sub 5} transition of Tb{sup 3+} ion respectively. The intensity of the emission at 542 nm is found to be decreasing at higher doping concentration due to concentration quenching effect. The blue emission in the films can be attributed to the electron transition from shallow donor level formed by interstitial Zn atoms to the top of the valence band. The origin of the visible emission ~516 nm is attributed

  11. Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

    Science.gov (United States)

    Postiglione, William Michael

    BaSnO3 (BSO) is one of the most promising semiconducting oxides currently being explored for use in future electronic applications. BSO possesses a unique combination of high room temperature mobility (even at very high carrier concentrations, > 1019 cm-3), wide band gap, and high temperature stability, making it a potentially useful material for myriad applications. Significant challenges remain however in optimizing the properties and processing of epitaxial BSO, a critical step towards industrial applications. In this study we investigate the viability of using high pressure oxygen sputtering to produce high mobility La-doped BSO thin films. In the first part of our investigation we synthesized, using solid state reaction, phase-pure stoichiometric polycrystalline 2% La-doped BaSnO 3 for use as a target material in our sputtering system. We verified the experimental bulk lattice constant, 4.117 A, to be in good agreement with literature values. Next, we set out to optimize the growth conditions for DC sputtering of La doped BaSnO3. We found that mobility for all our films increased monotonically with deposition temperature, suggesting the optimum temperature for deposition is > 900 °C and implicating a likely improvement in transport properties with post-growth thermal anneal. We then preformed systematic studies aimed at probing the effects of varying thickness and deposition rate to optimize the structural and electronic transport properties in unbuffered BSO films. In this report we demonstrate the ability to grow 2% La BSO thin films with an effective dopant activation of essentially 100%. Our films showed fully relaxed (bulk), out-of-plane lattice parameter values when deposited on LaAlO3, MgO, and (LaAlO3)0.3(Sr2 TaAlO6)0.7 substrates, and slightly expanded out-of-plane lattice parameters for films deposited on SrTiO3, GdScO3, and PrScO3 substrates. The surface roughness's of our films were measured via AFM, and determined to be on the nm scale or better

  12. Characterization and device applications of ZnO films deposited by high power impulse magnetron sputtering (HiPIMS)

    Science.gov (United States)

    Partridge, J. G.; Mayes, E. L. H.; McDougall, N. L.; Bilek, M. M. M.; McCulloch, D. G.

    2013-04-01

    ZnO films have been reactively deposited on sapphire substrates at 300 °C using a high impulse power magnetron sputtering deposition system and characterized structurally, optically and electronically. The unintentionally doped n-type ZnO films exhibit high transparency, moderate carrier concentration (˜5 × 1018 cm-3) and a Hall mobility of 8.0 cm2 V-1 s-1, making them suitable for electronic device applications. Pt/ZnO Schottky diodes formed on the HiPIMS deposited ZnO exhibited rectification ratios up to 104 at ±2 V and sensitivity to UV light.

  13. Ultra-high vacuum system of the Brookhaven National Synchrotron Light Source

    International Nuclear Information System (INIS)

    Foerster, C.L.

    1995-01-01

    The rings of the National Synchrotron Light Source (NSLS) have been supplying light to numerous users for approximately a decade and recently a fully conditioned machine vacuum at design currents was obtained. A brief description of the x-ray storage ring, the VUV storage ring and their current supply is given along with some of their features. The ultra-high vacuum system employed for the storage rings and their advantages for the necessary stored beam environments are discussed including, a brief history of time. 15 refs., 2 tabs., 8 figs

  14. Performance of a high resolution monochromator for the vacuum ultraviolet radiation from the DORIS storage ring

    International Nuclear Information System (INIS)

    Saile, V.; Skibowski, M.; Steinmann, W.; Guertler, P.; Koch, E.E.; Kozevnikov, A.

    1976-03-01

    The unique properties of the DORIS storage ring at DESY as a synchrotron radiation source are exploited for high resolution spectroscopy in the vacuum ultraviolet. We describe a new experimental set up with a 3 meter normal incidence monochromator for wavelengths between 3,000 A to 300 A (4 [de

  15. Highly Resolved Studies of Vacuum Ultraviolet Photoionization Dynamics

    Science.gov (United States)

    Kakar, Sandeep

    We use measurements of dispersed fluorescence from electronically excited photoions to study fundamental aspects of intramolecular dynamics. Our experimental innovations make it possible to obtain highly resolved photoionization data that offer qualitative insights into molecular scattering. In particular, we obtain vibrationally resolved data to probe coupling between the electronic and nuclear degrees of freedom by studying the distribution of vibrational energy among photoions. Vibrationally resolved branching ratios are measured over a broad spectral range of excitation energy and their non-Franck-Condon behavior is used as a tool to investigate two diverse aspects of shape resonant photoionization. First, vibrational branching ratios are obtained for the SiF_4 5a _1^{-1} and CS_2 5sigma_{rm u} ^{-1} photoionization channels to help elucidate the microscopic aspects of shape resonant wavefunction for polyatomic molecules. It is shown that in such molecules the shape resonant wavefunction is not necessarily attributable to a specific bond in the molecule. Second, the multichannel aspect of shape resonant photoionization dynamics, reflected in continuum channel coupling, is investigated by obtaining vibrational branching ratios for the 2 sigma_{rm u}^{ -1} and 4sigma^{ -1} photoionization of the isoelectronic molecules N_2 and CO, respectively. These data indicate that effects of continuum coupling may be widespread. We also present the first set of rotationally resolved data over a wide energy range for the 2 sigma_{rm u}^{ -1} photoionization of N_2. These data probe the partitioning of the angular momentum between the photoelectron and photoion, and highlight the multicenter nature of the molecular potential. These case studies illustrate the utility of dispersed fluorescence measurements as a complement to photoelectron spectroscopy for obtaining highly resolved data for molecular photoionization. These measurements makes it possible to probe intrinsically

  16. An introduction to closed field sputtering (CFS) equipment

    International Nuclear Information System (INIS)

    Sugden, G.B.

    1979-01-01

    Ways have been sought to develop the vacuum sputtering process to reduce the source material temperature and to increase the deposition rate. A new industrial plating method superior to vacuum evaporation and electroplating has emerged. In this 'closed field sputtering' processes an electric field is applied between a coaxial anode and cathode and a magnetic field applied orthogonally to the electric field. Providing the flux density of the magnetic field is above a critical value no electrons flow to the anode but move along the magnetic lines around the cathode, enclosed in the magnetic field. A high density electron cloud with high ionization probability is therefore maintained. Low temperature sputtering can be attained due to very low energy loss of electrons at the anode. A pressure of about (2-5) x 10(-4) torr is used. High power can be applied to the equipment without producing much heat. It enables a large number of plastic parts to be coated with almost any nonmagnetic metal and alloys of metals on a commercial basis. It is also possible to produce coatings of oxides. nitrides and carbides of metals. The method of operation and a description of the equipment are given. Applications include car exteriors, household appliances, furniture toys and the electronics industry. (UK)

  17. Hard nanocrystalline Zr-B-C-N films with high electrical conductivity prepared by pulsed magnetron sputtering

    Czech Academy of Sciences Publication Activity Database

    Vlček, J.; Steidl, P.; Kohout, J.; Čerstvý, R.; Zeman, P.; Prokšová, S.; Peřina, Vratislav

    2013-01-01

    Roč. 215, JAN 25 (2013), s. 186-191 ISSN 0257-8972. [39th International Conference on Metallurgical Coatings and Thin Films (ICMTF). San Diego, California, 23.04.2012-27.04.2012] Institutional support: RVO:61389005 Keywords : Zr-B-C-N films * nanocomposite materials * pulsed magnetron sputtering * hard ness * high electrical conductivity * osidation resistance Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 2.199, year: 2013 http://www.sciencedirect.com/science/article/pii/S0257897212010584

  18. Characterization of leached surface layers on simulated high-level waste glasses by sputter-induced optical emission

    International Nuclear Information System (INIS)

    Houser, C.; Tsong, I.S.T.; White, W.B.

    1979-01-01

    The leaching process in simulated waste encapsulant glasses was studied by measuring the compositional depth-profiles of H (from water), the glass framework formers Si and B, the alkalis Na and Cs, the alkaline earths Ca and Sr, the transition metals Mo and Fe, the rare-earths La, Ce, and Nd, using the technique of sputter-induced optical emission. The leaching process of these glasses is highly complex. In addition to alkali/hydrogen exchange, there is breakdown of the glass framework, build-up of barrier layers on the surface, and formation of layered reaction zones of distinctly different chemistry all within the outer micrometer of the glass

  19. Electronic sputtering

    International Nuclear Information System (INIS)

    Johnson, R.E.

    1989-01-01

    Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

  20. Leybold vacuum handbook

    CERN Document Server

    Diels, K; Diels, Kurt

    1966-01-01

    Leybold Vacuum Handbook presents a collection of data sets that are essential for numerical calculation of vacuum plants and vacuum processes. The title first covers vacuum physics, which includes gas kinetics, flow phenomena, vacuum gauges, and vapor removal. Next, the selection presents data on vacuum, high vacuum process technology, and gas desorption and gettering. The text also deals with materials, vapor pressure, boiling and melting points, and gas permeability. The book will be of great interest to engineers and technicians that deals with vacuum related technologies.

  1. Comparisons of physical and chemical sputtering in high density divertor plasmas with the Monte Carlo Impurity (MCI) transport model

    International Nuclear Information System (INIS)

    Evans, T.E.; Loh, Y.S.; West, W.P.; Finkenthal, D.F.

    1997-11-01

    The MCI transport model was used to compare chemical and physical sputtering for a DIII-D divertor plasma near detachment. With physical sputtering alone the integrated carbon influx was 8.4 x 10 19 neutral/s while physical plus chemical sputtering produced an integrated carbon influx of 1.7 x 10 21 neutrals/s. The average carbon concentration in the computational volume increased from 0.012% with only physical sputtering to 0.182% with both chemical and physical sputtering. This increase in the carbon inventory produced more radiated power which is in better agreement with experimental measurements

  2. Electron beam gun with kinematic coupling for high power RF vacuum devices

    Science.gov (United States)

    Borchard, Philipp

    2016-11-22

    An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composed of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.

  3. Highly-enhanced reflow characteristics of sputter deposited Cu alloy thin films for large scale integrated interconnections

    Energy Technology Data Exchange (ETDEWEB)

    Onishi, Takashi [Advanced Technology Information Center, Shinko Research Co., Ltd., 2-7, 4-Chome, Iwaya-Nakamachi, Nada-ku, Kobe 657-0845 (Japan); Mizuno, Masao [Technical Development Group, Electronics Research Laboratory, Kobe Steel, Ltd., 5-5, Takatsukadai 1-chome, Nishi-ku, Kobe 651-2271 (Japan); Yoshikawa, Tetsuya; Munemasa, Jun [Machinery and Engineering Company, Kobe Steel, Ltd., 2-3-1, Shinhama, Arai-cho, Takasago 676-8670 (Japan); Mizuno, Masataka; Kihara, Teruo; Araki, Hideki [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita 565-0871 (Japan); Shirai, Yasuharu [Department of Materials Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

    2011-08-01

    An attempt to improve the reflow characteristics of sputtered Cu films was made by alloying the Cu with various elements. We selected Y, Sb, Nd, Sm, Gd, Dy, In, Sn, Mg, and P for the alloys, and ''the elasto-plastic deformation behavior at high temperature'' and ''the filling level of Cu into via holes'' were estimated for Cu films containing each of these elements. From the results, it was found that adding a small amount of Sb or Dy to the sputtered Cu was remarkably effective in improve the reflow characteristics. The microstructure and imperfections in the Cu films before and after high-temperature high-pressure annealing were investigated by secondary ion micrographs and positron annihilation spectroscopy. The results imply that the embedding or deformation mechanism is different for the Cu-Sb alloy films compared to the Cu-Dy alloy films. We consider that the former is embedded by softening or deformation of the Cu matrix, which has a polycrystalline structure, and the latter is embedded by grain boundary sliding.

  4. Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

    International Nuclear Information System (INIS)

    Shimizu, T; Villamayor, M; Helmersson, U; Lundin, D

    2016-01-01

    A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar–N 2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N 2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf–N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail. (paper)

  5. Discharge modes at the anode of a vacuum arc

    International Nuclear Information System (INIS)

    Miller, H.C.

    1982-01-01

    The two most common anode modes in a vacuum arc are the low current mode, where the anode is basically inert; and the high current mode with a fully developed anode spot. This anode spot is very bright, has a temperature near the boiling point of the anode material, and is a copious source of vapor and energetic ions. However, other anode modes can exist. A low current vacuum arc with electrodes of readily sputterable material will emit a flux of sputtered atoms from the anode. An intermediate currents an anode footpoint can form. This footpoint is luminous, but much cooler than a true anode spot. Finally, a high current mode can exist where several small anode spots are present instead of a single large anode spot

  6. Fretting wear of Inconel 625 at high temperature and in high vacuum

    International Nuclear Information System (INIS)

    Iwabuchi, A.

    1985-01-01

    The purpose of this work was to investigate the fretting properties of Inconel 625 at high temperature and in high vacuum. Experiments were carried out under constant conditions with a normal load of 14 N and a peak-to-peak slip amplitude of 110 μm and through 6x10 4 cycles. Several environmental conditions were used. Pressure was varied between 10 -3 and 10 5 Pa at temperatures of 20 and 500 0 C. Temperatures up to 500 0 C were also used at pressures of 10 -3 and 10 5 Pa. At 10 -3 Pa and 500 0 C wear loss was negligible but wear scars showed severe damage consisting of deep cracks and accretion of transferred debris. The coefficient of friction then maintained a high value of 1.7 throughout the fretting test. The critical pressure below which oxidation rate becomes reduced is 10 Pa, a value independent of temperature. At pressures below this critical value the coefficient of friction increases steeply and the fretting mechanism changes from one of oxidative wear to one of adhesive wear. A compacted so-called 'glaze' oxide was formed at temperatures above 300 0 C in air (10 5 Pa) and at pressures above 10 3 Pa at 500 0 C. A comparison of results for Inconel 625 with those for S45C and SUS304 steels and Inconel 600 is given. (orig.)

  7. Effects of annealing temperature on the structural, mechanical and electrical properties of flexible bismuth telluride thin films prepared by high-pressure RF magnetron sputtering

    Science.gov (United States)

    Singkaselit, Kamolmad; Sakulkalavek, Aparporn; Sakdanuphab, Rachsak

    2017-09-01

    In this work Bi x Te y thin films were deposited on polyimide substrate by a high-pressure RF magnetron sputtering technique. The deposited condition was maintained using a high pressure of 1.3  ×  10-2 mbar. The as-deposited films show Bi2Te3 structure with Te excess phase (Te-rich Bi2Te3). After that, as-deposited films were annealed in the vacuum chamber under the N2 flow at temperatures from 250 to 400 °C for one hour. The microstructure, cross-section, [Bi]:[Te] content, and the mechanical, electrical and thermoelectric properties of as-deposited and different annealed films were investigated. It was found that the annealing temperature enhanced the crystallinity and film density for the temperature range 250-300 °C. However, the crystal structure of Bi2Te3 almost changed to the BiTe structure after annealing the films above 350 °C, due to the re-evaporation of Te. Nano-indentation results and cross-section images indicated that the hardness of the films related to the film density. The maximum hardness of 2.30 GPa was observed by annealing the films at 300 °C. As a result of an improvement in crystallinity and phase changes, the highest power factor of 11.45  ×  10-4 W m-1K-2 at 300 °C with the carrier concentration and mobility of 6.15  ×  1020 cm-3 and 34.03 cm2 V-1 s-1, respectively, was achieved for the films annealed at 400 °C. Contribution at the 4th Southeast Asia Conference on Thermoelectrics 2016 (SACT 2016), 15-18 December 2016, Da Nang City, Vietnam.

  8. Ultra-high vacuum system of the Brookhaven National Synchrotron Light Source

    Energy Technology Data Exchange (ETDEWEB)

    Foerster, C.L.

    1995-12-31

    The rings of the National Synchrotron Light Source (NSLS) have been supplying light to numerous users for approximately a decade and we recently enjoyed a fully conditioned machine vacuum at design currents. A brief description of the X-Ray storage ring, the VUV storage ring and their current supply is given along with some of their features. The ultra-high vacuum system employed for the storage rings and their advantages for the necessary stored beam environments are discussed including, a brief history of time. After several hundred amp hours of stored beam current operation, very little improvement in machine performance was seen due to conditioning. Sections of the rings were vented, to dry nitrogen and replacement components were pre-baked and pre-argon glow conditioned prior to installation. Very little machine conditioning was needed to return to operation after recovering vacuum due to well established conditioning procedures. All straight sections in the X-Ray ring and the VUV ring have been filled with various insertion devices and most are fully operational. Each storage ring has a computer controlled total pressure and partial pressure monitoring system for the ring and its beam ports, to insure good vacuum.

  9. Cyclic crack resistance of magnesium alloys in vacuum, humid an highly desiccated air

    International Nuclear Information System (INIS)

    Yarema, S.Ya.; Zinyuk, O.D.

    1986-01-01

    Investigation results on cyclic crack resistance of four structural magnesium alloys in vacuum, humid and highly desiccated air are presented. The regularities obtained are discussed at the background of the known data, using the data on crack closing and hydrogen concenration near its vertex. Diagrams of fatigue fracture of magnesium alloys MA2-1, MA15, MA8 and MA18, produced in vacuum, dry and humid air, on the whole obey the previously established regularities for aluminium alloys and steels. The diagrams of fatigue fracture plotted taking into account crack closing (v-ΔK eff ) for dry and humid air are quite similar. An increase in cyclic crack resistance of the materials in vacuum can not be explained by the change in the crack closing and is evidently conditioned by the absence of hydrogen absorption as the main factor accelerating the crack growth. Effect of vacuum on the threshold K th increases with the increase in σ 0.2 , which testifies to a strong effect of medium on the rate of fatigue crack growth in near the threshold region

  10. Preparation of High-Grade Powders from Tomato Paste Using a Vacuum Foam Drying Method.

    Science.gov (United States)

    Sramek, Martin; Schweiggert, Ralf Martin; van Kampen, Andreas; Carle, Reinhold; Kohlus, Reinhard

    2015-08-01

    We present a rapid and gentle drying method for the production of high-grade tomato powders from double concentrated tomato paste, comparing results with powders obtained by foam mat air drying and freeze dried powders. The principle of this method consists of drying tomato paste in foamed state at low temperatures in vacuum. The formulations were dried at temperatures of 50, 60, and 70 °C and vacuum of 200 mbar. Foam stability was affected by low serum viscosity and the presence of solid particles in tomato paste. Consequently, serum viscosity was increased by maltodextrin addition, yielding optimum stability at tomato paste:maltodextrin ratio of 2.4:1 (w/w) in dry matter. Material foamability was improved by addition of 0.5% (w/w, fresh weight) egg white. Because of solid particles in tomato paste, foam air filling had to be limited to critical air volume fraction of Φ = 0.7. The paste was first pre-foamed to Φ = 0.2 and subsequently expanded in vacuo. After drying to a moisture content of 5.6% to 7.5% wet base (w.b.), the materials obtained were in glassy state. Qualities of the resulting powders were compared with those produced by freeze and air drying. Total color changes were the least after vacuum drying, whereas air drying resulted in noticeable color changes. Vacuum foam drying at 50 °C led to insignificant carotenoid losses, being equivalent to the time-consuming freeze drying method. In contrast, air drying caused lycopene and β-carotene losses of 18% to 33% and 14% to 19% respectively. Thus, vacuum foam drying enables production of high-grade tomato powders being qualitatively similar to powders obtained by freeze drying. © 2015 Institute of Food Technologists®

  11. Effect of High Solenoidal Magnetic Fields on Breakdown Voltages of High Vacuum 805 MHz Cavities

    CERN Document Server

    Moretti, A; Geer, S; Qian, Z

    2004-01-01

    The demonstration of muon ionization cooling by a large factor is necessary to demonstrate the feasilibility of a collider or neutrino factory. An important cooling experiment, MICE [1], has been proposed to demonstrate 10 % cooling which will validate the technology. Ionization cooling is accomplished by passing a high-emittance beam in a multi-Tesla solenoidal channel alternately through regions of low Z material and very high accelerating RF Cavities. To determine the effect of very large solenoidal magnetic fields on the generations of Dark current, X-Rays and breakdown Voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station, and a large bore 5 T solenoidal superconducting magnet containing a pill box type Cavity with thin removable window apertures allowing dark current studies and breakdown studies of different materials. The results of this study will be presented. The study has shown that the peak achievab...

  12. Effect of high solenoidal magnetic fields on breakdown voltages of high vacuum 805 MHz cavities

    International Nuclear Information System (INIS)

    Moretti, A.; Bross, A.; Geer, S.; Qian, Z.; Norem, J.; Li, D.; Zisman, M.; Torun, Y.; Rimmer, R.; Errede, D.

    2005-01-01

    There is an on going international collaboration studying the feasibility and cost of building a muon collider or neutrino factory [1,2]. An important aspect of this study is the full understanding of ionization cooling of muons by many orders of magnitude for the collider case. An important muon ionization cooling experiment, MICE [3], has been proposed to demonstrate and validate the technology that could be used for cooling. Ionization cooling is accomplished by passing a high-emittance muon beam alternately through regions of low Z material, such as liquid hydrogen, and very high accelerating RF Cavities within a multi-Tesla solenoidal field. To determine the effect of very large solenoidal magnetic fields on the generation of dark current, x-rays and on the breakdown voltage gradients of vacuum RF cavities, a test facility has been established at Fermilab in Lab G. This facility consists of a 12 MW 805 MHz RF station and a large warm bore 5 T solenoidal superconducting magnet containing a pill box type cavity with thin removable window apertures. This system allows dark current and breakdown studies of different window configurations and materials. The results of this study will be presented. The study has shown that the peak achievable accelerating gradient is reduced by a factor greater than 2 when solenoidal field of greater than 2 T are applied to the cavity

  13. Time evolution of the vacuum - pair production in high intensity laser fields

    Energy Technology Data Exchange (ETDEWEB)

    Woellert, Anton; Bauke, Heiko; Keitel, Christoph H. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany)

    2013-07-01

    Interaction between the vacuum and high intensity lasers will lead to new possibilities in high-field physics. We present numerical ab initio studies for time evolution of the vacuum state into multiple pair states. The high intensity laser field of two counter-propagating beams is treated classically and in the non-perturbative regime (E{sub 0}/ω ∝ 1). In this regime, the time needed by an electron to become relativistic in presence of a static field E{sub 0} is of same order as the period of the laser field. Pair state probabilities as well as correlations are investigated in real-time depending on polarization and field strength.

  14. Vacuum system of the high energy ring of an asymmetric B-factory based on PEP

    International Nuclear Information System (INIS)

    Barletta, W.A.; Calderon, M.O.; Wong, R.; Jenkins, T.M.

    1991-01-01

    The multi-ampere currents required for high luminosity operation of an asymmetric B factory leads to extremely stressing requirements on a vacuum system suitable for maintaining long beam-gas lifetimes and acceptable background levels in the detector. We present the design for a Cu alloy vacuum chamber and its associated pumping system for the 9 GeV electron storage ring of the proposed B factory based on PEP. The excellent thermal and photo-desorption properties of Cu allows handling the high proton flux in a conventional, single chamber design with distributed ion pumps. The x-ray opacity of the Cu is sufficiently high that no additional lead shielding is necessary to protect the dipoles from the intense synchrotron radiation generated by the beam. The design allows chamber commissioning in <500 hr of operation. 5 refs., 3 figs., 2 tabs

  15. Development of high resolution vacuum ultraviolet beam line at Indus-1 synchrotron source

    International Nuclear Information System (INIS)

    Shukla, R.P.; Das, N.C.; Udupa, D.V.; Saraswathy, P.; Sunanda, K.; Jha, S.N.; Shastri, Aparna; Singh, Paramjeet; Mallick, Manika; Mishra, A.P.; Sahoo, N.K.; Sinha, A.K.; Bhatt, S.; Sahni, V.C.

    2005-07-01

    High resolution vacuum ultraviolet beamline at Indus-1 450 MeV synchrotron source has been developed for carrying out absorption spectral studies of atoms and molecules. The beamline consists of three major parts i.e. a focusing optical system, an absorption cell and a high resolution 6.65 m vacuum ultraviolet spectrometer in Eagle mount. The wavelength range of the spectrometer is from 700 A to 2000 A and the resolution of the spectrometer is 0.01 A. Using the synchrotron source Indus-1, the absorption spectra of oxygen, ammonia and carbon disulphide have been recorded at the wavelength band of 1750 A, 1881 A and 3100 A respectively. Details of different aspects of design and development of the high resolution VUV beamline are described in this report. (author)

  16. Ultra-high vacuum compatible optical chopper system for synchrotron x-ray scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Hao, E-mail: hc000211@ohio.edu [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Nanoscale and Quantum Phenomena Institute, Physics & Astronomy Department, Ohio University, Athens, Ohio 45701 (United States); Cummings, Marvin; Shirato, Nozomi; Stripe, Benjamin; Preissner, Curt; Freeland, John W. [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Rosenmann, Daniel [Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Kersell, Heath; Hla, Saw-Wai [Nanoscale and Quantum Phenomena Institute, Physics & Astronomy Department, Ohio University, Athens, Ohio 45701 (United States); Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Rose, Volker, E-mail: vrose@anl.gov [Advanced Photon Source, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States); Center for Nanoscale Materials, Argonne National Laboratory, 9700 South Cass Avenue, Argonne, Illinois 60439 (United States)

    2016-01-28

    High-speed beam choppers are a crucial part of time-resolved x-ray studies as well as a necessary component to enable elemental contrast in synchrotron x-ray scanning tunneling microscopy (SX-STM). However, many chopper systems are not capable of operation in vacuum, which restricts their application to x-ray studies with high photon energies, where air absorption does not present a significant problem. To overcome this limitation, we present a fully ultra-high vacuum (UHV) compatible chopper system capable of operating at variable chopping frequencies up to 4 kHz. The lightweight aluminum chopper disk is coated with Ti and Au films to provide the required beam attenuation for soft and hard x-rays with photon energies up to about 12 keV. The chopper is used for lock-in detection of x-ray enhanced signals in SX-STM.

  17. High temperature oxidation resistance of magnetron-sputtered homogeneous CrAlON coatings on 430 steel

    Energy Technology Data Exchange (ETDEWEB)

    Garratt, E; Wickey, K J; Nandasiri, M I; Moore, A; AlFaify, S; Gao, X [Department of Physics, Western Michigan University, Kalamazoo, MI 49008 (United States); Smith, R J; Buchanan, T L; Priyantha, W; Kopczyk, M; Gannon, P E [Montana State University, Bozeman, MT, 59717 (United States); Kayani, A, E-mail: asghar.kayani@wmich.ed

    2009-11-01

    The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800 {sup o}C. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). Surface characterization was carried out using Atomic Force Microscopy (AFM) and surfaces of the coatings were found smooth on submicron scale. From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

  18. Structure and superconducting properties of Nb-Zr alloy films made by a high-rate sputtering

    International Nuclear Information System (INIS)

    Sekine, Hisashi; Inoue, Kiyoshi; Tachikawa, Kyoji

    1978-01-01

    Superconducting Nb-Zr alloy films have been prepared by a continuous high-rate sputtering on tantalum substrates. A deposition rate of 330 nm/min has been attained. The compositional profile in the Nb-Zr film is quite uniform and the film has nearly the same composition as that of the target. The films deposited in a pure argon atmosphere show a columnar structure grown perpendicular to the substrate. The grain size strongly depends on the substrate temperature. The phase transformations in the Nb-Zr film become more apparent and the structure becomes closer to the equilibrium state as the film is deposited in higher atmosphere pressures and/or at lower target voltages. The superconducting transition temperature T sub(c) of the films is about the same as that of bulk samples. The dependence of T sub(c) on the substrate temperature is explainable on the phase transformations in the film. Critical current density J sub(c) and its anisotropy is closely related to the grain structure of the film. Grain boundaries seem to act as the most predominant flux pinning centers in the films. Effects of oxygen in the sputtering atmosphere on the structure and superconducting properties of the Nb-Zr films have been also investigated. Oxygen significantly decreases the grain size of the film. Oxygen increases J sub(c) but decreases T sub(c) of the film. (auth.)

  19. Semi-automated high-efficiency reflectivity chamber for vacuum UV measurements

    Science.gov (United States)

    Wiley, James; Fleming, Brian; Renninger, Nicholas; Egan, Arika

    2017-08-01

    This paper presents the design and theory of operation for a semi-automated reflectivity chamber for ultraviolet optimized optics. A graphical user interface designed in LabVIEW controls the stages, interfaces with the detector system, takes semi-autonomous measurements, and monitors the system in case of error. Samples and an optical photodiode sit on an optics plate mounted to a rotation stage in the middle of the vacuum chamber. The optics plate rotates the samples and diode between an incident and reflected position to measure the absolute reflectivity of the samples at wavelengths limited by the monochromator operational bandpass of 70 nm to 550 nm. A collimating parabolic mirror on a fine steering tip-tilt motor enables beam steering for detector peak-ups. This chamber is designed to take measurements rapidly and with minimal oversight, increasing lab efficiency for high cadence and high accuracy vacuum UV reflectivity measurements.

  20. Effect of argon ion sputtering of surface on hydrogen permeation through vanadium

    International Nuclear Information System (INIS)

    Yamawaki, Michio; Namba, Takashi; Yoneoka, Toshiaki; Kanno, Masayoshi; Shida, Koji.

    1983-01-01

    In order to measure the hydrogen permeation rate through V with atomically cleaned surface, an Ar ion sputtering apparatus has been installed in the hydrogen permeability measuring system. The permeation rate of the initial specimen was found to be increased by about one order of magnitude after Ar ion sputtering of its upstream side surface. Repeating of such a sputter-cleaning was not so much effective in increasing the steady state permeation rate as the initial sputtering was, but it accelerated the transient response rate by a factor of 2 or 3. The transient response rate was also accelerated by the increase of hydrogen pressure, but this effect tended to be diminished by the sputter-cleaning of specimen surface. The surface impurity layer on the downstream side of specimen was also inferred to act as a diffusion barrier affecting the steady state permeation rate. The present value of activation energy for hydrogen permeation through V at temperatures below 873K was the smallest one ever obtained, showing that the surface effect was minimized in the present study on account of the surface sputter-cleaning in addition to the ultra high vacuum system. (author)

  1. A novel ultra-high vacuum manipulator with six degrees of freedom

    International Nuclear Information System (INIS)

    Auciello, O.; Lulich, C.; Alonso, E.V.; Baragiola, R.A.

    1977-01-01

    An ultra-high vacuum goniometer of novel design for use in experiments with ion beams is described. The goniometer uses a wire system to transmit movements, is bakeable to 200 0 C and is reproducible in its angular positions to within 1.3 X 10 -4 rad (0.008 0 ). It allows a sample to be rotated around two axes over 360 0 , around a third over 180 0 , and to be translated along three perpendicular axes. (Auth.)

  2. Study of a pressure measurement method using laser ionization for extremely-high vacuum

    International Nuclear Information System (INIS)

    Kokubun, Kiyohide

    1991-01-01

    A method of measuring pressures in the range of extremely-high vacuum (XHV) using the laser ionization has been studied. For this purpose, nonresonant multiphoton ionization of various kinds of gases has been studied, and highly-sensitive ion-detection systems and an extremely-high vacuum equipment were fabricated. These results are presented in detail. Two ion-detection systems were fabricated and tested: the one is based on the pulse-counting method, and the other utilizes the image-processing technique. The former is superior in detecting a few ions or less. The latter was processing technique. The former is superior in detecting a few ions or less. The latter was verified to able to count accurately the number of ions in the range of a few to several hundreds. To obtain the information on residual gases and test our pressure measurement system, an extremely-high vacuum system was fabricated in our own fashion, attained a pressure lower than 1 x 10 -10 Pa, measured with an extractor gauge. The outgassing rate of this vacuum vessel was measured to be 7.8 x 10 -11 Pa·m 3 /s·m 2 . The surface structures and the surface compositions of the raw material, the machined material, and the machined-and-outgased material were studied by SEM and AES. Besides, the pumping characteristics and the residual gases of the XHV system were investigated in detail at each pumping stage. On the course of these studies, the method of pressure measurement using the laser-ionization has been verified to be very effective for measuring pressures in XHV. (J.P.N.)

  3. Low temperature magnetron sputter deposition of polycrystalline silicon thin films using high flux ion bombardment

    International Nuclear Information System (INIS)

    Gerbi, Jennifer E.; Abelson, John R.

    2007-01-01

    We demonstrate that the microstructure of polycrystalline silicon thin films depends strongly on the flux of low energy ions that bombard the growth surface during magnetron sputter deposition. The deposition system is equipped with external electromagnetic coils which, through the unbalanced magnetron effect, provide direct control of the ion flux independent of the ion energy. We report the influence of low energy ( + on the low temperature ( + ions to silicon neutrals (J + /J 0 ) during growth by an order of magnitude (from 3 to 30) enables the direct nucleation of polycrystalline Si on glass and SiO 2 coated Si at temperatures below 400 degree sign C. We discuss possible mechanisms for this enhancement of crystalline microstructure, including the roles of enhanced adatom mobility and the formation of shallow, mobile defects

  4. Characterization of magnetic Ni clusters on graphene scaffold after high vacuum annealing

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Zhenjun, E-mail: zzhang1@albany.edu; Matsubayashi, Akitomo, E-mail: norwegianwood.1984@gmail.com; Grisafe, Benjamin, E-mail: bgrisafe@albany.edu; Lee, Ji Ung, E-mail: jlee1@albany.edu; Lloyd, James R., E-mail: JLloyd@sunycnse.com

    2016-02-15

    Magnetic Ni nanoclusters were synthesized by electron beam deposition utilizing CVD graphene as a scaffold. The subsequent clusters were subjected to high vacuum (5−8 x10{sup −7} torr) annealing between 300 and 600 °C. The chemical stability, optical and morphological changes were characterized by X-ray photoemission microscopy, Raman spectroscopy, atomic force microscopy and magnetic measurement. Under ambient exposure, nickel nanoparticles were observed to be oxidized quickly, forming antiferromagnetic nickel oxide. Here, we report that the majority of the oxidized nickel is in non-stoichiometric form and can be reduced under high vacuum at temperature as low as 300 °C. Importantly, the resulting annealed clusters were relatively stable and no further oxidation was detectable after three weeks of air exposure at room temperature. - Highlights: • Random oriented nickel clusters were assembled on monolayer graphene scaffold. • Nickel oxide shell was effectively reduced at moderate temperature. • Coercivity of nickel clusters are greatly improved after high vacuum annealing.

  5. Ultra high vacuum compatible microwave beam launcher for ECRH in SST - 1

    International Nuclear Information System (INIS)

    Shukla, B.K.; Sathyanarayana, K.; Biswas, P.; Pragnesh, D.; Bora, D.

    2005-01-01

    Microwave beam launcher for Electron Cyclotron Resonance Heating (ECRH) system is used to focus the microwave beam at plasma center of SST -1. The beam launcher consists of an ultra high vacuum (UHV) compatible mirror box with two mirrors mounted in it. One mirror is focusing mirror while other one is a plane mirror. The total volume of the launcher is ∼ 60000 cc and the total surface area exposed to UHV is around ∼ 1.0x10 4 cm 2 . The mirrors are cooled with water for high power and long pulse operation. UHV compatible SS hoses provide flexible cooling connection to the mirrors. Flexible cooling connection helps in adjustment and steering of the mirrors. SS hoses are welded at both the ends and this is necessary to avoid any flange connection inside ultra high vacuum. The system has been tested for UHV compatibility. The leak rate is checked with helium leak detector and found better than l x 10 -9 mbar.lt/s. The system has been baked to 150 deg C for ∼14 hours and the ultimate vacuum achieved with turbomolecular pump (TMP) is ∼ 5x10 -9 mbar. The mirror assembly is tested for leak in pressurized condition using a sniffer probe. The mirrors of the launcher along with the welded bellow are pressurized with helium gas up to a water equivalent pressure of ∼3kg/cm 2 . No increase in the background (∼-10 -6 mbar.lt/s) of the sniffer probes has been observed during the test. The plane mirror is connected with two UHV linear motion feedthroughs with suitable hinges and smooth movement is checked in vacuum. (author)

  6. The surface topography of the choroid plexus. Environmental, low and high vacuum scanning electron microscopy.

    Science.gov (United States)

    Mestres, Pedro; Pütz, Norbert; Garcia Gómez de Las Heras, Soledad; García Poblete, Eduardo; Morguet, Andrea; Laue, Michael

    2011-05-01

    Environmental scanning electron microscopy (ESEM) allows the examination of hydrated and dried specimens without a conductive metal coating which could be advantageous in the imaging of biological and medical objects. The aim of this study was to assess the performance and benefits of wet-mode and low vacuum ESEM in comparison to high vacuum scanning electron microscopy (SEM) using the choroid plexus of chicken embryos as a model, an organ of the brain involved in the formation of cerebrospinal fluid in vertebrates. Specimens were fixed with or without heavy metals and examined directly or after critical point drying with or without metal coating. For wet mode ESEM freshly excised specimens without any pre-treatment were also examined. Conventional high vacuum SEM revealed the characteristic morphology of the choroid plexus cells at a high resolution and served as reference. With low vacuum ESEM of dried but uncoated samples the structure appeared well preserved but charging was a problem. It could be reduced by a short beam dwell time and averaging of images or by using the backscattered electron detector instead of the gaseous secondary electron detector. However, resolution was lower than with conventional SEM. Wet mode imaging was only possible with tissue that had been stabilized by fixation. Not all surface details (e.g. microvilli) could be visualized and other structures, like the cilia, were deformed. In summary, ESEM is an additional option for the imaging of bio-medical samples but it is problematic with regard to resolution and sample stability during imaging. Copyright © 2011 Elsevier GmbH. All rights reserved.

  7. Epitaxial growth of high temperature superconductors by cathodic sputtering I: thin films of YBaCuO

    International Nuclear Information System (INIS)

    Navacerrada, M.A.; Sefrioui, Z.; Arias, D.; Varela, M.; Loos, G.; Leon, C.; Lucia, M.L.; Santamaria, J.; Sanchez-Quesada, F.

    1998-01-01

    High quality c-oriented YBa 2 Cu 3 O 7 -x thin films have been grown on SrTiO 3 (100)substrates by high pressure sputtering in pure oxygen atmosphere. Low angle X-ray diffraction and atomic force microscopy were performed on films less than 250 angstrom thick showing a plenitude better than one unit cell. Moreover, the structural characterization by means of X ray φ scans showed that growth is epitaxial. The critical temperature has been measured by different ways and was always in the range 89.5-90.5K. the resistance transition is sharper than 1K and the mutual inductance response always shows magnetic losses peaks narrower than 0.3K. Critical current densities are in excess of 10''''6 angstrom/cm''''2 at 77K. (Author) 8 refs

  8. Monte Carlo simulations of ultra high vacuum and synchrotron radiation for particle accelerators

    CERN Document Server

    AUTHOR|(CDS)2082330; Leonid, Rivkin

    With preparation of Hi-Lumi LHC fully underway, and the FCC machines under study, accelerators will reach unprecedented energies and along with it very large amount of synchrotron radiation (SR). This will desorb photoelectrons and molecules from accelerator walls, which contribute to electron cloud buildup and increase the residual pressure - both effects reducing the beam lifetime. In current accelerators these two effects are among the principal limiting factors, therefore precise calculation of synchrotron radiation and pressure properties are very important, desirably in the early design phase. This PhD project shows the modernization and a major upgrade of two codes, Molflow and Synrad, originally written by R. Kersevan in the 1990s, which are based on the test-particle Monte Carlo method and allow ultra-high vacuum and synchrotron radiation calculations. The new versions contain new physics, and are built as an all-in-one package - available to the public. Existing vacuum calculation methods are overvi...

  9. The chirped-pulse inverse free-electron laser: A high-gradient vacuum laser accelerator

    International Nuclear Information System (INIS)

    Hartemann, F.V.; Landahl, E.C.; Troha, A.L.; Van Meter, J.R.; Baldis, H.A.; Freeman, R.R.; Luhmann, N.C. Jr.; Song, L.; Kerman, A.K.; Yu, D.U.

    1999-01-01

    The inverse free-electron laser (IFEL) interaction is studied theoretically and computationally in the case where the drive laser intensity approaches the relativistic regime, and the pulse duration is only a few optical cycles long. The IFEL concept has been demonstrated as a viable vacuum laser acceleration process; it is shown here that by using an ultrashort, ultrahigh-intensity drive laser pulse, the IFEL interaction bandwidth and accelerating gradient are increased considerably, thus yielding large energy gains. Using a chirped pulse and negative dispersion focusing optics allows one to take further advantage of the laser optical bandwidth and produce a chromatic line focus maximizing the gradient. The combination of these novel ideas results in a compact vacuum laser accelerator capable of accelerating picosecond electron bunches with a high gradient (GeV/m) and very low energy spread. copyright 1999 American Institute of Physics

  10. On the catalysis of the electroweak vacuum decay by black holes at high temperature

    Science.gov (United States)

    Canko, D.; Gialamas, I.; Jelic-Cizmek, G.; Riotto, A.; Tetradis, N.

    2018-04-01

    We study the effect of primordial black holes on the classical rate of nucleation of AdS regions within the standard electroweak vacuum at high temperature. We base our analysis on the assumption that, at temperatures much higher than the Hawking temperature, the main effect of the black hole is to distort the Higgs configuration dominating the transition to the new vacuum. We estimate the barrier for the transition by the ADM mass of this configuration, computed through the temperature-corrected Higgs potential. We find that the exponential suppression of the nucleation rate can be reduced significantly, or even eliminated completely, in the black-hole background if the Standard Model Higgs is coupled to gravity through the renormalizable term ξ R h^2.

  11. Pressure measurements in the AGS Booster ultra-high vacuum system

    International Nuclear Information System (INIS)

    Gabusi, J.; Geller, J.; Hseuh, H.C.; Mapes, M.; Stattel, P.

    1992-01-01

    An average pressure of mid 10 -11 Torr has been achieved and maintained in the AGS Booster ring vacuum system during its first year of operation. This ultra-high vacuum system is monitored through remote controlled Bayard-Alpert Gauges (BAGs). The characteristics of the pressure measurements with BAGs over the long cable lengths (up to 200 m) and under various accelerator operating conditions will be described. Two types of noise in the pressure readouts have been identified; the electromagnetic interference (EMI) associated with the acceleration cycles of the Booster and the environment noise associated with the temperature of the collector cables. The magnitude of the noise pickup depends on the routing of the collector cables and reaches the equivalent pressure of low 10 -9 Torr

  12. Vacuum Simulations in High Energy Accelerators and Distribution Properties of Continuous and Discrete Particle Motions

    CERN Document Server

    Aichinger, Ida; Kersevan, Roberto

    The underlying thesis on mathematical simulation methods in application and theory is structured into three parts. The first part sets up a mathematical model capable of predicting the performance and operation of an accelerator’s vacuum system based on analytical methods. A coupled species-balance equation system describes the distribution of the gas dynamics in an ultra-high vacuum system considering impacts of conductance limitations, beam induced effects (ion-, electron-, and photon-induced de- sorption), thermal outgassing and sticking probabilities of the chamber materials. A new solving algorithm based on sparse matrix representations, is introduced and presents a closed form solution of the equation system. The model is implemented in a Python environment, named PyVasco, and is supported by a graphical user interface to make it easy available for everyone. A sensitivity analysis, a cross-check with the Test-Particle Monte Carlo simulation program Molflow+ and a comparison of the simulation results t...

  13. Vacuum Bloch-Siegert shift in Landau polaritons with ultra-high cooperativity

    Science.gov (United States)

    Li, Xinwei; Bamba, Motoaki; Zhang, Qi; Fallahi, Saeed; Gardner, Geoff C.; Gao, Weilu; Lou, Minhan; Yoshioka, Katsumasa; Manfra, Michael J.; Kono, Junichiro

    2018-06-01

    A two-level system resonantly interacting with an a.c. magnetic or electric field constitutes the physical basis of diverse phenomena and technologies. However, Schrödinger's equation for this seemingly simple system can be solved exactly only under the rotating-wave approximation, which neglects the counter-rotating field component. When the a.c. field is sufficiently strong, this approximation fails, leading to a resonance-frequency shift known as the Bloch-Siegert shift. Here, we report the vacuum Bloch-Siegert shift, which is induced by the ultra-strong coupling of matter with the counter-rotating component of the vacuum fluctuation field in a cavity. Specifically, an ultra-high-mobility two-dimensional electron gas inside a high-Q terahertz cavity in a quantizing magnetic field revealed ultra-narrow Landau polaritons, which exhibited a vacuum Bloch-Siegert shift up to 40 GHz. This shift, clearly distinguishable from the photon-field self-interaction effect, represents a unique manifestation of a strong-field phenomenon without a strong field.

  14. Cooling the Motion of Diamond Nanocrystals in a Magneto-Gravitational Trap in High Vacuum.

    Science.gov (United States)

    Hsu, Jen-Feng; Ji, Peng; Lewandowski, Charles W; D'Urso, Brian

    2016-07-22

    Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed as a unique system for experiments in fundamental quantum mechanics, including the generation of large quantum superposition states and tests of quantum gravity. This system promises extreme isolation from its environment while providing quantum control and sensing through the NV centre spin. While optical trapping has been the most explored method of levitation, recent results indicate that excessive optical heating of the nanodiamonds under vacuum may make the method impractical with currently available materials. Here, we study an alternative magneto-gravitational trap for diamagnetic particles, such as diamond nanocrystals, with stable levitation from atmospheric pressure to high vacuum. Magnetic field gradients from permanent magnets confine the particle in two dimensions, while confinement in the third dimension is gravitational. We demonstrate that feedback cooling of the centre-of-mass motion of a trapped nanodiamond cluster results in cooling of one degree of freedom to less than 1 K.

  15. High-vacuum pumping out of hydrogen isotopes by compressed and electrophysical pumps

    International Nuclear Information System (INIS)

    Bychkova, A.D.; Ershova, Z.V.; Saksaganskij, G.L.; Serebrennikov, D.V.

    1982-01-01

    To explain the selection of parameters of vacuum systems of projected thermonuclear devices, experiments are performed on the pumping-out of deuterium and tritium by high-vacuum pumps of different types. The values of the fast response of turbomolecular, diffusion vapour-mercury, magneto-discharge and titanium getter pumps in the operation pressure range are determined. The rate of sorption of hydrogen isotopes by non-spraying gas absorber of cial alloy depending on the amount of the gas absorbed and temperature, is measured. Gas current is determined by the pressure drop on the diagram of the known conductivity. Individual calibration of manometric converters for different gases using a mercury burette is performed preliminarily. The means of high-vacuum pumping-out that have been studied have the following values of fast response for tritium (relatively to protium): turbomolecular pump-0.95; evaporation getter pump-0.25; magneto-discharge pumps-0.65-0.9; cial alloy-0.1...0.5

  16. Vacuum ultraviolet Ar2*laser pumped by a high-intensity laser

    International Nuclear Information System (INIS)

    Kubodera, Shoichi; Kaku, Masanori; Higashiguchi, Takeshi

    2004-01-01

    We observed a small-signal gain of Ar 2 * emission at 126 nm by use of an Ar-filled hollow fiber to guide the ultrashort-pulse high-intensity laser propagation. The small signal gain coefficient was measured to be 0.05 cm -1 at 126 nm. Kinetic analysis revealed that the electrons produced by the high-intensity laser through an optical-field ionization process initiated the Ar 2 * production process. This laser scheme could be combined with high harmonic radiation of the pump laser in the vacuum ultraviolet (VUV), leading to the production of amplified ultrashort VUV pulses. (author)

  17. High vacuum test of the dynamic components of the cyclotron dee chamber at the 224 cm variable energy cyclotron

    International Nuclear Information System (INIS)

    Chintalapudi, S.N.; Bandopadhyay, D.K.; Ghosh, D.K.; Gowariker, S.R.

    1979-01-01

    The 224 cm Variable Energy Cyclotron constructed and commissioned at Calcutta comprises a number of dynamic components in the high vacuum Dee Chamber. The static and dynamic conditions of these components have to be tested for high vacuum worthiness prior to their installation in the Dee Tank. A special set up was fabricated and used for simulating the Dee Chamber conditions and testing the components. A high vacuum of the order of 1 x 10 -5 torr was achieved under both dynamic and static conditions with and without coolant hydraulic pressures. The details of the set up, methods employed for the various tests carried out and the results obtained are described. (auth.)

  18. Investigation of the influence of growth parameters on self-catalyzed ITO nanowires by high RF-power sputtering

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-04-01

    Tin-doped indium oxide (ITO) nanowires are successfully fabricated using a radio frequency (RF) sputtering technique with a high RF power of 250 W. The fabrication of the ITO nanowires is optimized through the study of oxygen flow rates, temperatures and RF power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target is observed and the mechanism for the difference is discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method demonstrated good conductivity (15 Ω sq-1) and a transmittance of more than 64% at a wavelength longer than 550 nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices.

  19. High Specific and Mass Activity for the Oxygen Reduction Reaction for Thin Film Catalysts of Sputtered Pt3Y

    DEFF Research Database (Denmark)

    Lindahl, Niklas; Zamburlini, Eleonora; Feng, Ligang

    2017-01-01

    Fuel cells have the potential to play an important role in sustainable energy systems, provided that catalysts with higher activity and stability are developed. In this work, it is found that thin alloy films of single-target cosputtered platinum-yttrium exhibit up to seven times higher specific...... additional chemical or thermal treatment. The films show an improvement in stability over the same materials in nanoparticulate form. Physical characterization shows that the thin films form a platinum overlayer supported on an underlying alloy. The high activity is likely related to compressive strain...... in that overlayer. As sputtering can be used to mass-produce fuel cell electrodes, the results open new possibilities for the preparation of platinum-rare earth metal alloy catalysts in commercial devices....

  20. Structural and electrical characteristics of highly textured oxidation-free Ru thin films by DC magnetron sputtering

    International Nuclear Information System (INIS)

    Tian, H.-Y.; Wang Yu; Chan, H.-L-W.; Choy, C.-L.; No, K.-S.

    2005-01-01

    Textured Ru thin films (∼120 nm) were deposited on Si and rolling-assisted biaxially textured Ni substrates by a DC magnetron sputtering technique with a two-step process. The biaxially textured pure Ni substrates with a thickness of 80 μm were fabricated by rolling followed by recrystallization. The alignments and the crystallinity of Ru films were analyzed by pole figures, as well as X-ray diffraction (θ - 2θ) analysis. The highly (0 0 2) oriented Ru films were fabricated on Si substrates, and four-fold symmetric Ru films on Ni(2 0 0) substrates. The resistivities of pure metallic Ru films were 20-80 μΩ cm for Ru on Si and 16-40 μΩ cm on Ni, respectively, which is sufficiently low to be used as a buffer layer in superconductor tapes or electrode materials in capacitor dielectrics

  1. Enhancement of Ti-containing hydrogenated carbon (Ti-C:H) films by high-power plasma-sputtering

    International Nuclear Information System (INIS)

    Gwo, Jyh; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Shyong

    2012-01-01

    Ti-containing amorphous hydrogenated carbon (Ti-C:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C 2 H 2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a Ti-TiC-DLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of Ti-C:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results.

  2. Enhancement of Ti-containing hydrogenated carbon (Tisbnd C:H) films by high-power plasma-sputtering

    Science.gov (United States)

    Gwo, Jyh; Chu, Chun-Lin; Tsai, Ming-Jui; Lee, Shyong

    2012-02-01

    Ti-containing amorphous hydrogenated carbon (Tisbnd C:H) thin films were deposited on stainless steel SS304 substrates by high-power pulsed magnetron sputtering (HPPMS) in an atmosphere of mixed Ar and C2H2 gases using titanium metal as the cathodic material. The multilayer structure of the deposited film had a Tisbnd TiCsbnd DLC gradient to improve adhesion and reduce residual stress. This study investigates the effects of substrate bias and target-to-substrate distance on the mechanical properties of Tisbnd C:H films. Film properties, including composition, morphology, microstructure, mechanical, and tribology, were examined by glow discharge spectroscopy (GDS), scanning electron microscopy (SEM), X-ray diffraction (XRD), Raman spectroscopy, and a nanoindenter and a pin-on-disk tribometer. Experiments revealed impressive results.

  3. Magnetic anisotropy of thin sputtered MgB2 films on MgO substrates in high magnetic fields

    Directory of Open Access Journals (Sweden)

    Savio Fabretti

    2014-03-01

    Full Text Available We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T = 0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.

  4. Effect of High Temperature Annealing on Conduction-Type ZnO Films Prepared by Direct-Current Magnetron Sputtering

    International Nuclear Information System (INIS)

    Sun Li-Jie; He Dong-Kai; Xu Xiao-Qiu; Zhong Ze; Wu Xiao-Peng; Lin Bi-Xia; Fu Zhu-Xi

    2010-01-01

    We experimentally find that the ZnO thin films deposited by dc-magnetron sputtering have different conduction types after annealing at high temperature in different ambient. Hall measurements show that ZnO films annealed at 1100°C in N 2 and in O 2 ambient become n-type and p-type, respectively. This is due to the generation of different intrinsic defects by annealing in different ambient. X-ray photoelectron spectroscopy and photolumi-nescence measurements indicate that zinc interstitial becomes a main defects after annealing at 1100°C in N 2 ambient, and these defects play an important role for n-type conductivity of ZnO. While the ZnO films annealed at 1100°C in O 2 ambient, the oxygen antisite contributes ZnO films to p-type. (condensed matter: structure, mechanical and thermal properties)

  5. Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces

    DEFF Research Database (Denmark)

    Hartmann, Hannes; Popok, Vladimir; Barke, Ingo

    2012-01-01

    The design and performance of an experimental setup utilizing a magnetron sputtering source for production of beams of ionized size-selected clusters for deposition in ultra-high vacuum is described. For the case of copper cluster formation the influence of different source parameters is studied...

  6. Visible-light active thin-film WO3 photocatalyst with controlled high-rate deposition by low-damage reactive-gas-flow sputtering

    Directory of Open Access Journals (Sweden)

    Nobuto Oka

    2015-10-01

    Full Text Available A process based on reactive gas flow sputtering (GFS for depositing visible-light active photocatalytic WO3 films at high deposition rates and with high film quality was successfully demonstrated. The deposition rate for this process was over 10 times higher than that achieved by the conventional sputtering process and the process was highly stable. Furthermore, Pt nanoparticle-loaded WO3 films deposited by the GFS process exhibited much higher photocatalytic activity than those deposited by conventional sputtering, where the photocatalytic activity was evaluated by the extent of decomposition of CH3CHO under visible light irradiation. The decomposition time for 60 ppm of CH3CHO was 7.5 times more rapid on the films deposited by the GFS process than on the films deposited by the conventional process. During GFS deposition, there are no high-energy particles bombarding the growing film surface, whereas the bombardment of the surface with high-energy particles is a key feature of conventional sputtering. Hence, the WO3 films deposited by GFS should be of higher quality, with fewer structural defects, which would lead to a decrease in the number of centers for electron-hole recombination and to the efficient use of photogenerated holes for the decomposition of CH3CHO.

  7. Development of fast heating electron beam annealing setup for ultra high vacuum chamber

    International Nuclear Information System (INIS)

    Das, Sadhan Chandra; Majumdar, Abhijit; Hippler, R.; Katiyal, Sumant; Shripathi, T.

    2014-01-01

    We report the design and development of a simple, electrically low powered and fast heating versatile electron beam annealing setup (up to 1000 °C) working with ultra high vacuum (UHV) chamber for annealing thin films and multilayer structures. The important features of the system are constant temperature control in UHV conditions for the temperature range from room temperature to 1000 ºC with sufficient power of 330 W, at constant vacuum during annealing treatment. It takes approximately 6 min to reach 1000 °C from room temperature (∼10 −6 mbar) and 45 min to cool down without any extra cooling. The annealing setup consists of a UHV chamber, sample holder, heating arrangement mounted on suitable UHV electrical feed-through and electronic control and feedback systems to control the temperature within ±1 ºC of set value. The outside of the vacuum chamber is cooled by cold air of 20 °C of air conditioning machine used for the laboratory, so that chamber temperature does not go beyond 50 °C when target temperature is maximum. The probability of surface oxidation or surface contamination during annealing is examined by means of x-ray photoelectron spectroscopy of virgin Cu sample annealed at 1000 °C

  8. Development of fast heating electron beam annealing setup for ultra high vacuum chamber

    Energy Technology Data Exchange (ETDEWEB)

    Das, Sadhan Chandra [UGC-DAE Consortium For Scientific Research, University Campus, Khandwa Road, Indore 452 001, MP (India); School of Electronics, Devi Ahilya University, Indore 452001, MP (India); Institute of Physics, University of Greifswald, Felix Hausdroff Str. 6 (Germany); Majumdar, Abhijit, E-mail: majuabhijit@gmail.com, E-mail: majumdar@uni-greifswald.de; Hippler, R. [Institute of Physics, University of Greifswald, Felix Hausdroff Str. 6 (Germany); Katiyal, Sumant [School of Electronics, Devi Ahilya University, Indore 452001, MP (India); Shripathi, T. [UGC-DAE Consortium For Scientific Research, University Campus, Khandwa Road, Indore 452 001, MP (India)

    2014-02-15

    We report the design and development of a simple, electrically low powered and fast heating versatile electron beam annealing setup (up to 1000 °C) working with ultra high vacuum (UHV) chamber for annealing thin films and multilayer structures. The important features of the system are constant temperature control in UHV conditions for the temperature range from room temperature to 1000 ºC with sufficient power of 330 W, at constant vacuum during annealing treatment. It takes approximately 6 min to reach 1000 °C from room temperature (∼10{sup −6} mbar) and 45 min to cool down without any extra cooling. The annealing setup consists of a UHV chamber, sample holder, heating arrangement mounted on suitable UHV electrical feed-through and electronic control and feedback systems to control the temperature within ±1 ºC of set value. The outside of the vacuum chamber is cooled by cold air of 20 °C of air conditioning machine used for the laboratory, so that chamber temperature does not go beyond 50 °C when target temperature is maximum. The probability of surface oxidation or surface contamination during annealing is examined by means of x-ray photoelectron spectroscopy of virgin Cu sample annealed at 1000 °C.

  9. Modelling of crater formation on anode surface by high-current vacuum arcs

    Science.gov (United States)

    Tian, Yunbo; Wang, Zhenxing; Jiang, Yanjun; Ma, Hui; Liu, Zhiyuan; Geng, Yingsan; Wang, Jianhua; Nordlund, Kai; Djurabekova, Flyura

    2016-11-01

    Anode melting and crater formation significantly affect interruption of high-current vacuum arcs. The primary objective of this paper is to theoretically investigate the mechanism of anode surface crater formation, caused by the combined effect of surface heating during the vacuum arc and pressure exerted on the molten surface by ions and electrons from the arc plasma. A model of fluid flow and heat transfer in the arc anode is developed and combined with a magnetohydrodynamics model of the vacuum arc plasma. Crater formation is observed in simulation for a peak arcing current higher than 15 kA on 40 mm diam. Cu electrodes spaced 10 mm apart. The flow of liquid metal starts after 4 or 5 ms of arcing, and the maximum velocities are 0.95 m/s and 1.39 m/s for 20 kA and 25 kA arcs, respectively. This flow redistributes thermal energy, and the maximum temperature of the anode surface does not remain in the center. Moreover, the condition for the liquid droplet formation on the anode surfaces is developed. The solidification process after current zero is also analyzed. The solidification time has been found to be more than 3 ms after 25 kA arcing. The long solidification time and sharp features on crater rims induce Taylor cone formation.

  10. Recent advances in high current vacuum arc ion sources for heavy ion fusion

    CERN Document Server

    Qi Nian Sheng; Prasad, R R; Krishnan, M S; Anders, A; Kwan, J; Brown, I

    2001-01-01

    For a heavy ion fusion induction linac driver, a source of heavy ions with charge states 1+-3+, approx 0.5 A current beams, approx 20 mu s pulse widths and approx 10 Hz repetition rates is required. Thermionic sources have been the workhorse for the Heavy Ion Fusion (HIF) program to date, but suffer from heating problems for large areas and contamination. They are limited to low (contact) ionization potential elements and offer relatively low ion fluxes with a charge state limited to 1+. Gas injection sources suffer from partial ionization and deleterious neutral gas effects. The above shortcomings of the thermionic ion sources can be overcome by a vacuum arc ion source. The vacuum arc ion source is a good candidate for HIF applications. It is capable of providing ions of various elements and different charge states in short and long pulse bursts and high beam current density. Under a Phase-I STTR from DOE, the feasibility of the vacuum arc ion source for the HIF applications was investigated. We have modifie...

  11. Thermal deposition of intact tetrairon(III) single-molecule magnets in high-vacuum conditions.

    Science.gov (United States)

    Margheriti, Ludovica; Mannini, Matteo; Sorace, Lorenzo; Gorini, Lapo; Gatteschi, Dante; Caneschi, Andrea; Chiappe, Daniele; Moroni, Riccardo; de Mongeot, Francesco Buatier; Cornia, Andrea; Piras, Federica M; Magnani, Agnese; Sessoli, Roberta

    2009-06-01

    A tetrairon(III) single-molecule magnet is deposited using a thermal evaporation technique in high vacuum. The chemical integrity is demonstrated by time-of-flight secondary ion mass spectrometry on a film deposited on Al foil, while superconducting quantum interference device magnetometry and alternating current susceptometry of a film deposited on a kapton substrate show magnetic properties identical to the pristine powder. High-frequency electron paramagnetic resonance spectra confirm the characteristic behavior for a system with S = 5 and a large Ising-type magnetic anisotropy. All these results indicate that the molecules are not damaged during the deposition procedure keeping intact the single-molecule magnet behavior.

  12. Fabrication of highly oriented β-FeSi2 by ion beam sputter deposition

    International Nuclear Information System (INIS)

    Nakanoya, Takamitsu; Sasase, Masato; Yamamoto, Hiroyuki; Saito, Takeru; Hojou, Kiichi

    2002-01-01

    We have prepared the 'environmentally friendly' semiconductor, β-FeSi 2 thin films by ion beam sputter deposition method. The temperature of Si (100) substrate during the deposition and total amount of deposited Fe have been changed in order to find the optimum condition of the film formation. The crystallinity and surface morphology of the formed silicides were analyzed by X-ray diffraction (XRD) and scanning electron microscope (SEM), respectively. It is understood that the domain of the epitaxially grown β-FeSi 2 increases with the substrate temperature up to 700degC at the fixed amount of deposited Fe (33 nm) by XRD spectra. On the other hand, α-FeSi 2 is appeared and increased with the temperature above 700degC. Granulation of the surface is also observed by SEM images at this temperature region. At the fixed temperature condition (700degC), formation of α phase, which is obtained at the higher temperature compared with β phase, is observed for the fewer deposited samples. These results suggest the possibility of the epitaxially grown β-FeSi 2 formation at the lower (< 700degC) temperature region. (author)

  13. Mercury Conditions for the MESSENGER Mission Simulated in High- Solar-Radiation Vacuum Tests

    Science.gov (United States)

    Wong, Wayne A.

    2003-01-01

    The MESSENGER (Mercury Surface, Space Environment, Geochemistry, and Ranging) spacecraft, planned for launch in March 2004, will perform two flybys of Mercury before entering a year-long orbit of the planet in September 2009. The mission will provide opportunities for detailed characterization of the surface, interior, atmosphere, and magnetosphere of the closest planet to the Sun. The NASA Glenn Research Center and the MESSENGER spacecraft integrator, the Johns Hopkins University Applied Physics Laboratory, have partnered under a Space Act Agreement to characterize a variety of critical components and materials under simulated conditions expected near Mercury. Glenn's Vacuum Facility 6, which is equipped with a solar simulator, can simulate the vacuum and high solar radiation anticipated in Mercury orbit. The MESSENGER test hardware includes a variety of materials and components that are being characterized during the Tank 6 vacuum tests, where the hardware will be exposed to up to 11 suns insolation, simulating conditions expected in Mercury orbit. In 2002, ten solar vacuum tests were conducted, including beginning of life, end of life, backside exposure, and solar panel thermal shock cycling tests. Components tested include candidate solar array panels, sensors, thermal shielding materials, and communication devices. As an example, for the solar panel thermal shock cycling test, two candidate solar array panels were suspended on a lift mechanism that lowered the panels into a liquid-nitrogen-cooled box. After reaching -140 C, the panels were then lifted out of the box and exposed to the equivalent of 6 suns (8.1 kilowatts per square meters). After five cold soak/heating cycles were completed successfully, there was no apparent degradation in panel performance. An anticipated 100-hr thermal shield life test is planned for autumn, followed by solar panel flight qualification tests in winter. Glenn's ongoing support to the MESSENGER program has been instrumental in

  14. The design of high vacuum system for baby electron beam machine (baby ebm): a comparison between theoretical and experimental

    International Nuclear Information System (INIS)

    Mohd Rizal Mamat; Rosli Darmawan; Lee Chee Huei; Mohd Rizal Md Chulan; Leo Kwee Wah; Muhamad Zahidee Taat; Fadzlie Nordin; Abu Bakar Mhd Ghazali

    2005-01-01

    Baby ebm which was developed to study the engineering and physics of electrons requires the use of high vacuum system in order to prevent electron loss and ionization of air molecules. In selecting the high vacuum system for baby ebm two main factors were considered: the ultimate pressure and the pump down time. The ultimate pressure required for the operation of the baby ebm is in 10-7 torr range. The pump down time was estimated from calculations, taking into account the vacuum pump and chamber size. The turbomolecular pump system (tmp), which is capable of achieving the required vacuum level was selected as the high vacuum system and installed to baby ebm. The tmp is currently fully operational. It was found that the vacuum pumping performance of the tmp differs considerably from what the calculations indicate. Compared to the calculations, it takes a much longer time to achieve the required operating pressure of baby ebm. This could be due to the fact that the formula used for the calculations was a very simplified formula that takes into account the main factors only which are the vacuum pump and chamber size. This paper attempts to present the comparison of the tmp performance between the theoretical and experimental. (Author)

  15. High vacuum tip-enhanced Raman spectroscope based on a scanning tunneling microscope.

    Science.gov (United States)

    Fang, Yurui; Zhang, Zhenglong; Sun, Mengtao

    2016-03-01

    In this paper, we present the construction of a high-vacuum tip-enhanced Raman spectroscopy (HV-TERS) system that allows in situ sample preparation and measurement. A detailed description of the prototype instrument is presented with experimental validation of its use and novel ex situ experimental results using the HV-TERS system. The HV-TERS system includes three chambers held under a 10(-7) Pa vacuum. The three chambers are an analysis chamber, a sample preparation chamber, and a fast loading chamber. The analysis chamber is the core chamber and contains a scanning tunneling microscope (STM) and a Raman detector coupled with a 50 × 0.5 numerical aperture objective. The sample preparation chamber is used to produce single-crystalline metal and sub-monolayer molecular films by molecular beam epitaxy. The fast loading chamber allows ex situ preparation of samples for HV-TERS analysis. Atomic resolution can be achieved by the STM on highly ordered pyrolytic graphite. We demonstrate the measurement of localized temperature using the Stokes and anti-Stokes TERS signals from a monolayer of 1,2-benzenedithiol on a gold film using a gold tip. Additionally, plasmonic catalysis can be monitored label-free at the nanoscale using our device. Moreover, the HV-TERS experiments show simultaneously activated infrared and Raman vibrational modes, Fermi resonance, and some other non-linear effects that are not observed in atmospheric TERS experiments. The high spatial and spectral resolution and pure environment of high vacuum are beneficial for basic surface studies.

  16. High vacuum tip-enhanced Raman spectroscope based on a scanning tunneling microscope

    Energy Technology Data Exchange (ETDEWEB)

    Fang, Yurui [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603-146, Beijing 100190 (China); Bionanophotonics, Department of Applied Physics, Chalmers University of Technology, Göteborg, SE 41296 (Sweden); Zhang, Zhenglong [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603-146, Beijing 100190 (China); School of Physics and Information Technology, Shaanxi Normal University, 710062 Xi’an (China); Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Sun, Mengtao, E-mail: mtsun@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603-146, Beijing 100190 (China)

    2016-03-15

    In this paper, we present the construction of a high-vacuum tip-enhanced Raman spectroscopy (HV-TERS) system that allows in situ sample preparation and measurement. A detailed description of the prototype instrument is presented with experimental validation of its use and novel ex situ experimental results using the HV-TERS system. The HV-TERS system includes three chambers held under a 10{sup −7} Pa vacuum. The three chambers are an analysis chamber, a sample preparation chamber, and a fast loading chamber. The analysis chamber is the core chamber and contains a scanning tunneling microscope (STM) and a Raman detector coupled with a 50 × 0.5 numerical aperture objective. The sample preparation chamber is used to produce single-crystalline metal and sub-monolayer molecular films by molecular beam epitaxy. The fast loading chamber allows ex situ preparation of samples for HV-TERS analysis. Atomic resolution can be achieved by the STM on highly ordered pyrolytic graphite. We demonstrate the measurement of localized temperature using the Stokes and anti-Stokes TERS signals from a monolayer of 1,2-benzenedithiol on a gold film using a gold tip. Additionally, plasmonic catalysis can be monitored label-free at the nanoscale using our device. Moreover, the HV-TERS experiments show simultaneously activated infrared and Raman vibrational modes, Fermi resonance, and some other non-linear effects that are not observed in atmospheric TERS experiments. The high spatial and spectral resolution and pure environment of high vacuum are beneficial for basic surface studies.

  17. Stability time of a DT-filled cryogenic ICF target in a high vacuum environment

    International Nuclear Information System (INIS)

    Ebey, P.S.; Hoffer, J.K.

    1998-01-01

    Following the successful pressure loading with DT of a thin-walled plastic inertial fusion target shell (such as those designed for use at the OMEGA facility at the University of Rochester's Laboratory for Laser Energetics (UR/LLE)), continual care must be taken to safeguard the shell from being exposed to unacceptable pressure differentials across its wall. In particular, once the DT has been condensed into a liquid or solid phase and the outside pressure has been reduced, the target must be maintained below some upper cutoff temperature such that the vapor pressure of the DT is below the bursting pressure for the shell. Through the process of β-decay the DT self-heats, but while the shell is in a high vacuum environment (P much-lt 0.8 Pa (6 mtorr) for the OMEGA layering sphere) there is only a negligible heat loss mechanism. This will cause the temperature to increase. A calculation has been done to estimate the rate of temperature increase of the loaded target under high vacuum conditions. A functional form for calculating the target's temperature increase given its starting temperature is presented. An overall result is that under high vacuum conditions the DT changes from a solid at 10 K to a liquid at 37 K (T c = 39.4 K) in about 19 minutes. This holding time is significantly less if the initial temperature is higher, the initial state is liquid, or the upper allowed temperature is lower. Simplifying assumptions which were made and their impact on interpreting the results of this calculation are discussed

  18. High charge state metal ion production in vacuum arc ion sources

    International Nuclear Information System (INIS)

    Brown, I.G.; Anders, A.; Anders, S.

    1994-01-01

    The vacuum arc is a rich source of highly ionized metal plasma that can be used to make a high current metal ion source. Vacuum arc ion sources have been developed for a range of applications including ion implantation for materials surface modification, particle accelerator injection for fundamental nuclear physics research, and other fundamental and applied purposes. Typically the source is repetitively pulsed with pulse length of order a millisecond and duty cycle or order 1% and operation of a dc embodiment has been demonstrated also. Beams have been produced from over 50 of the solid metals of the periodic table, with mean ion energy up to several hundred keV and with peak (pulsed) beam current up to several amperes. The ion charge state distribution has been extensively studied. Ion spectra have been measured for a wide range of metallic cathode materials, including Li, C, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Pd, Ag, Cd, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Tm, Yb, Hf, Ta, W, Ir, Pt, Au, Pb, Bi, Th and U, as well as compound and alloy cathode materials such as TiC, SiC, UC, PbS, brass, and stainless steel. The ions generated are in general multiply-stripped with a mean charge state of from 1 to 3, depending on the particular metal species, and the charge state distribution can have components from Q = 1+ to 6+. Here the authors review the characteristics of vacuum arc ion sources from the perspective of their high charge state metal ion production

  19. Isotope puzzle in sputtering

    International Nuclear Information System (INIS)

    Zheng Liping

    1998-01-01

    Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

  20. High Contrast Vacuum Nuller Testbed (VNT) Contrast, Performance and Null Control

    Science.gov (United States)

    Lyon, Richard G.; Clampin, Mark; Petrone, Peter; Mallik, Udayan; Madison, Timothy; Bolcar, Matthew R.

    2012-01-01

    Herein we report on our Visible Nulling Coronagraph high-contrast result of 109 contrast averaged over a focal planeregion extending from 14 D with the Vacuum Nuller Testbed (VNT) in a vibration isolated vacuum chamber. TheVNC is a hybrid interferometriccoronagraphic approach for exoplanet science. It operates with high Lyot stopefficiency for filled, segmented and sparse or diluted-aperture telescopes, thereby spanning the range of potential futureNASA flight telescopes. NASAGoddard Space Flight Center (GSFC) has a well-established effort to develop the VNCand its technologies, and has developed an incremental sequence of VNC testbeds to advance this approach and itsenabling technologies. These testbeds have enabled advancement of high-contrast, visible light, nulling interferometry tounprecedented levels. The VNC is based on a modified Mach-Zehnder nulling interferometer, with a W configurationto accommodate a hex-packed MEMS based deformable mirror, a coherent fiber bundle and achromatic phase shifters.We give an overview of the VNT and discuss the high-contrast laboratory results, the optical configuration, criticaltechnologies and null sensing and control.

  1. High contrast vacuum nuller testbed (VNT) contrast, performance, and null control

    Science.gov (United States)

    Lyon, Richard G.; Clampin, Mark; Petrone, Peter; Mallik, Udayan; Madison, Timothy; Bolcar, Matthew R.

    2012-09-01

    Herein we report on our Visible Nulling Coronagraph high-contrast result of 109 contrast averaged over a focal plane region extending from 1 - 4 λ/D with the Vacuum Nuller Testbed (VNT) in a vibration isolated vacuum chamber. The VNC is a hybrid interferometric/coronagraphic approach for exoplanet science. It operates with high Lyot stop efficiency for filled, segmented and sparse or diluted-aperture telescopes, thereby spanning the range of potential future NASA flight telescopes. NASA/Goddard Space Flight Center (GSFC) has a well-established effort to develop the VNC and its technologies, and has developed an incremental sequence of VNC testbeds to advance this approach and its enabling technologies. These testbeds have enabled advancement of high-contrast, visible light, nulling interferometry to unprecedented levels. The VNC is based on a modified Mach-Zehnder nulling interferometer, with a “W” configuration to accommodate a hex-packed MEMS based deformable mirror, a coherent fiber bundle and achromatic phase shifters. We give an overview of the VNT and discuss the high-contrast laboratory results, the optical configuration, critical technologies and null sensing and control.

  2. Air sparging/high vacuum extraction to remove chlorinated solvents in groundwater and soil

    International Nuclear Information System (INIS)

    Phelan, J.M.; Gilliat, M.D.

    1998-01-01

    An air sparging and high vacuum extraction was installed as an alternative to a containment pump and treat system to reduce the long-term remediation schedule. The site is located at the DOE Mound facility in Miamisburg, Ohio, just south of Dayton. The air sparging system consists of 23 wells interspersed between 17 soil vapor extraction wells. The SVE system has extracted about 1,500 lbs of VOCs in five months. The air sparging system operated for about 6 weeks before shutdown due to suspected biochemical fouling. Technical data are presented on the operating characteristics of the system

  3. Low loss hollow optical-waveguide connection from atmospheric pressure to ultra-high vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Ermolov, A.; Mak, K. F.; Tani, F.; Hölzer, P.; Travers, J. C. [Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Russell, P. St. J. [Max Planck Institute for the Science of Light, Günther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Department of Physics, University of Erlangen-Nuremberg, Günther-Scharowsky-Str. 1, 91058 Erlangen (Germany)

    2013-12-23

    A technique for optically accessing ultra-high vacuum environments, via a photonic-crystal fiber with a long small hollow core, is described. The small core and the long bore enable a pressure ratio of over 10{sup 8} to be maintained between two environments, while permitting efficient and unimpeded delivery of light, including ultrashort optical pulses. This delivery can be either passive or can encompass nonlinear optical processes such as optical pulse compression, deep UV generation, supercontinuum generation, or other useful phenomena.

  4. An atomic beam source for fast loading of a magneto-optical trap under high vacuum

    DEFF Research Database (Denmark)

    McDowall, P.D.; Hilliard, Andrew; Grünzweig, T.

    2012-01-01

    We report on a directional atomic beam created using an alkali metal dispenser and a nozzle. By applying a high current (15 A) pulse to the dispenser at room temperature we can rapidly heat it to a temperature at which it starts dispensing, avoiding the need for preheating. The atomic beam produced...... is capable of loading 90 of a magneto-optical trap (MOT) in less than 7 s while maintaining a low vacuum pressure of 10 -11 Torr. The transverse velocity components of the atomic beam are measured to be within typical capture velocities of a rubidium MOT. Finally, we show that the atomic beam can be turned...

  5. O-Ring sealing arrangements for ultra-high vacuum systems

    Science.gov (United States)

    Kim, Chang-Kyo; Flaherty, Robert

    1981-01-01

    An all metal reusable O-ring sealing arrangement for sealing two concentric tubes in an ultra-high vacuum system. An O-ring of a heat recoverable alloy such as Nitinol is concentrically positioned between protruding sealing rings of the concentric tubes. The O-ring is installed between the tubes while in a stressed martensitic state and is made to undergo a thermally induced transformation to an austenitic state. During the transformation the O-ring expands outwardly and contracts inwardly toward a previously sized austenitic configuration, thereby sealing against the protruding sealing rings of the concentric tubes.

  6. Evaluation of ion-sputtered molybdenum disulfide bearings for spacecraft gimbals

    Science.gov (United States)

    Loewenthal, S. H.; Chou, R. G.; Hopple, G. B.; Wenger, W. L.

    1994-07-01

    High-density, sputtered molybdenum disulfide films (MoS2) were investigated as lubricants for the next generation of spacecraft gimbal bearings where low torque signatures and long life are required. Low friction in a vacuum environment, virturally no out-gassing, insensitivity to low temperature, and radiation resistance of these lubricant films are valued in such applications. One hundred and twenty five thousand hours of acumulated bearing test time were obtained on 24 pairs of flight-quality bearings ion-sputtered with three types of advanced MoS2 films. Life tests were conducted in a vacuum over a simulated duty cycle for a space payload gimbal. Optimum retainer and ball material composition were investigated. Comparisions were made with test bearings lubricated with liquid space lubricants. Self-lubricating PTFE retainers were required for long life, i.e., greater than 40 million gimbal cycles. Bearings with polyimide retainers, silicon nitride ceramic balls, or steel balls sputtered with MoS2 film suffered early torque failure, irrespective of the type of race-sputtered MoS2 film. Failure generally resulted from excess film or retainer debris deposited in the ball track which tended to jam the bearing. Both grease lubricated and the better MoS2 film lubricated bearings produced long lives, although the torque with liquid lubricants was lower and less irregular.

  7. CrN/AlN nanolaminate coatings deposited via high power pulsed and middle frequency pulsed magnetron sputtering

    International Nuclear Information System (INIS)

    Bagcivan, N.; Bobzin, K.; Ludwig, A.; Grochla, D.; Brugnara, R.H.

    2014-01-01

    Nanolaminate coatings based on transition metal nitrides such as CrN, AlN and TiN deposited via physical vapor deposition (PVD) have shown great advantage as protective coatings on tools and components subject to high loads in tribological applications. By varying the individual layer materials and their thicknesses it is possible to optimize the coating properties, e.g. hardness, Young's modulus and thermal stability. One way for further improvement of coating properties is the use of advanced PVD technologies. High power pulsed magnetron sputtering (HPPMS) is an advancement of pulsed magnetron sputtering (MS). The use of HPPMS allows a better control of the energetic bombardment of the substrate due to the higher ionization degree of metallic species. It provides an opportunity to influence chemical and mechanical properties by varying the process parameters. The present work deals with the development of CrN/AlN nanolaminate coatings in an industrial scale unit by using two different PVD technologies. Therefore, HPPMS and mfMS (middle frequency magnetron sputtering) technologies were used. The bilayer period Λ, i.e. the thickness of a CrN/AlN double layer, was varied between 6.2 nm and 47.8 nm by varying the rotational speed of the substrate holders. In a second step the highest rotational speed was chosen and further HPPMS CrN/AlN coatings were deposited applying different HPPMS pulse lengths (40, 80, 200 μs) at the same mean cathode power and frequency. Thickness, morphology, roughness and phase composition of the coatings were analyzed by means of scanning electron microscopy (SEM), confocal laser microscopy, and X-ray diffraction (XRD), respectively. The chemical composition was determined using glow discharge optical emission spectroscopy (GDOES). Detailed characterization of the nanolaminate was conducted by transmission electron microscopy (TEM). The hardness and the Young's modulus were analyzed by nanoindentation measurements. The residual

  8. An ultra-high-vacuum multiple grating chamber and scan drive with improved grating change

    International Nuclear Information System (INIS)

    Hulbert, S.L.; Holly, D.J.; Middleton, F.H.; Wallace, D.J.; Wisconsin Univ., Stoughton, WI; Wisconsin Univ., Stoughton, WI

    1989-01-01

    We describe a new grating chamber and scan drive which has been designed, built, and tested by Physical Sciences Laboratory of the University of Wisconsin for the new high flux, high-resolution spectroscopy branch line of the TOK hybrid wiggler/undulator on the NSLS VUV ring. The chamber will contain spherical gratings to be used in the Spherical Grating Monochromator (SGM) configuration introduced by Chen and Sette. The grating chamber houses five 180 mm x 35 mm x 30 mm gratings capable of scanning a range of 12 degree (-14 degree to +8 degree with respect to the incoming beam direction) for VUV and soft X-ray diffraction. The gratings can be switched and precisely indexed while under ultra-high vacuum (UHV) at any scan angle and are mechanically isolated from the vacuum chamber to prevent inaccuracies due to chamber distortions. The gratings can separately be adjusted for height, yaw, pitch, and roll, with the latter three performed while in vacuo. The scan drive provides a resolution of 0.03 arc sec with linearity over the 12 degree range of ∼1.5 arc sec and absolute reproducibility of 1 arc sec. 5 refs., 5 figs

  9. Semi-empirical formulas for sputtering yield

    International Nuclear Information System (INIS)

    Yamamura, Yasumichi

    1994-01-01

    When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

  10. The influence of preparation methodology on high voltage behaviour of alumina insulators in vacuum

    CERN Document Server

    Goddard, B; Tan, J

    1998-01-01

    The flashover characteristics of an insulator bridged high voltage vacuum gap can play an important role in the overall performance of a high voltage device, for example in the extreme environments of high energy particle accelerators. The detailed preparation of the insulators is, at present, governed by the commercial production methods and by standard bulk cleaning processes, which for a particular application may be far from optimum. The influence of particular cleaning technique have been investigated for commercially available alumina samples, with measurement of surface characteristics by scanning electron microscopy and laser diffraction and fields up to 200 kV/cm. The results of the different measurements are discussed in the overall context of the problems encountered in the full sized high voltage devices, and suggestions are made as to how the performance of alumina insulators could be improved by modification of the production and preparation specification.

  11. Vacuum expectation values of high-dimensional operators and their contributions to the Bjorken and Ellis-Jaffe sum rules

    International Nuclear Information System (INIS)

    Oganesian, A.G.

    1998-01-01

    A method is proposed for estimating unknown vacuum expectation values of high-dimensional operators. The method is based on the idea that the factorization hypothesis is self-consistent. Results are obtained for all vacuum expectation values of dimension-7 operators, and some estimates for dimension-10 operators are presented as well. The resulting values are used to compute corrections of higher dimensions to the Bjorken and Ellis-Jaffe sum rules

  12. Near field plasmonic gradient effects on high vacuum tip-enhanced Raman spectroscopy.

    Science.gov (United States)

    Fang, Yurui; Zhang, Zhenglong; Chen, Li; Sun, Mengtao

    2015-01-14

    Near field gradient effects in high vacuum tip-enhanced Raman spectroscopy (HV-TERS) are a recent developing ultra-sensitive optical and spectral analysis technology on the nanoscale, based on the plasmons and plasmonic gradient enhancement in the near field and under high vacuum. HV-TERS can not only be used to detect ultra-sensitive Raman spectra enhanced by surface plasmon, but also to detect clear molecular IR-active modes enhanced by strongly plasmonic gradient. Furthermore, the molecular overtone modes and combinational modes can also be experimentally measured, where the Fermi resonance and Darling-Dennison resonance were successfully observed in HV-TERS. Theoretical calculations using electromagnetic field theory firmly supported experimental observation. The intensity ratio of the plasmon gradient term over the linear plasmon term can reach values greater than 1. Theoretical calculations also revealed that with the increase in gap distance between tip and substrate, the decrease in the plasmon gradient was more significant than the decrease in plasmon intensity, which is the reason that the gradient Raman can be only observed in the near field. Recent experimental results of near field gradient effects on HV-TERS were summarized, following the section of the theoretical analysis.

  13. Deformation of contact surfaces in a vacuum interrupter after high-current interruptions

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Haoran; Wang, Zhenxing, E-mail: zxwang@xjtu.edu.cn; Zhou, Zhipeng; Jiang, Yanjun; Wang, Jianhua; Geng, Yingsan; Liu, Zhiyuan [State Key Laboratory of Electrical Insulation and Power Equipment, Xi' an Jiaotong University, Xi' an 710049 (China)

    2016-08-07

    In a high-current interruption, the contact surface in a vacuum interrupter might be severely damaged by constricted vacuum arcs causing a molten area on it. As a result, a protrusion will be initiated by a transient recovery voltage after current zero, enhancing the local electric field and making breakdowns occur easier. The objective of this paper is to simulate the deformation process on the molten area under a high electric field by adopting the finite element method. A time-dependent Electrohydrodynamic model was established, and the liquid-gas interface was tracked by the level-set method. From the results, the liquid metal can be deformed to a Taylor cone if the applied electric field is above a critical value. This value is correlated to the initial geometry of the liquid metal, which increases as the size of the liquid metal decreases. Moreover, the buildup time of a Taylor cone obeys the power law t = k × E{sup −3}, where E is the initial electric field and k is a coefficient related to the material property, indicating a temporal self-similar characteristic. In addition, the influence of temperature has little impact on the deformation but has great impact on electron emission. Finally, the possible reason to initiate a delayed breakdown is associated with the deformation. The breakdown does not occur immediately when the voltage is just applied upon the gap but is postponed to several milliseconds later when the tip is formed on the liquid metal.

  14. The Plasma Window: A Windowless High Pressure-Vacuum Interface for Various Accelerator Applications

    International Nuclear Information System (INIS)

    Hershcovitch, A. I.; Johnson, E. D.; Lanza, R. C.

    1999-01-01

    The Plasma Window is a stabilized plasma arc used as an interface between accelerator vacuum and pressurized targets. There is no solid material introduced into the beam and thus it is also capable of transmitting particle beams and electromagnetic radiation with low loss and of sustaining high beam currents without damage. Measurements on a prototype system with a 3 mm diameter opening have shown that pressure differences of more than 2.5 atmospheres can be sustained with an input pressure of ∼ 10 -6 Torr. The system is capable of scaling to higher-pressure differences and larger apertures. Various plasma window applications for synchrotron light sources, high power lasers, internal targets, high current accelerators such as the HAWK, ATW, APT, DARHT, spallation sources, as well as for a number of commercial applications, is discussed

  15. Automatic torque magnetometer for vacuum-to-high-pressure hydrogen environments

    International Nuclear Information System (INIS)

    Larsen, J.W.; Livesay, B.R.

    1979-01-01

    An automatic torque magnetometer has been developed for use in high-pressure hydrogen. It will contain pressures ranging from vacuum to 200 atm of hydrogen gas at sample temperatures greater than 400 0 C. This magnetometer, which uses an optical lever postion sensor and a restoring force technique has an operating range of 2.0 x 10 3 dyn cm to l.6 x 10 -4 dyn cm. An accompanying digital data collection system extends the sensitivity to 1 x 10 -5 dyn cm as well as increasing the data handling capacity of the system. The magnetic properties of thin films in high-temperature and high-pressure hydrogen environments can be studied using this instruments

  16. The Use of OXYGEN-18 in the Development of Methods for Controlled Sputter Deposition of High Critical Transition Temperature Material Thin Films of Predicted Composition and Good Uniformity

    Science.gov (United States)

    Tidrow, Steven Clay

    Two primary concerns, in the sputter deposition of high T_{c} material films, are the prevention of oxygen deficiency in the films and the elimination of the negative ion effect. "Oxygen deficiency" occurs when the amount of oxygen incorporated into the film is less than the amount of oxygen required to form the superconducting material lattice. Oxygen deficiency is due to the volatile nature of oxygen. The negative ion effect occurs when an atom or molecule (typically oxygen) gains an extra electron, is accelerated away from the target and impinges upon a film being grown directly in front of the sputtering target. The impinging particle has enough energy to cause resputtering of the deposited film. The presence of Sr and to a greater extent Ba, may enhance the negative ion effect in these materials. However, it is oxygen which readily forms negative ions that is primarily responsible for the negative ion effect. Thus, oxygen must be given special attention in the sputter deposition of high T_{c} material films. A specially designed sputtering system is used to demonstrate that the negative ion effect can be reduced such that large uniform high T_{c} material films possessing predicted and repeated composition can be grown in an on-axis arrangement. Utilizing this same sputtering system and the volatile nature of oxygen, it is demonstrated that oxygen processes occurring in the chamber during growth of high T_ {c} material films can be investigated using the tracer ^{18}O. In particular, it is shown that ^{18}O can be utilized as a tool for (1) investigating the negative ion effect, (2) investigating oxygen incorporation into high T_{c} material films, (3) investigating oxygen incorporation into the target, (4) tailoring films for oxygen migration and interface investigations and (5) tailoring films for the other specific oxygen investigations. Such sputtering systems that utilize the tracer ^{18}O are necessary for systematic growth of high T_ {c} material films

  17. Isolated Bacterial Spores at High-velocity Survive Surface Impacts in Vacuum

    Science.gov (United States)

    Austin, Daniel; Barney, Brandon

    We present experiments in which bacterial spores were found to survive being accelerated in vacuum to velocities in the range 30-120 m/s and impacted on a dense target. In these experiments, spores of Bacillus subtilis spores were charged using electrospray at atmospheric pressure, dried, and then introduced into high vacuum. Through choice of skimmers and beam tubes, different velocity ranges were achieved. An image-charge detector observed the charged spores, providing total charge and velocity. The spores then impacted a glass target within a collection vessel. After the experiment, the collection vessel contents were extracted and cultured. Several positive and negative controls were used, including the use of antibiotic-resistant spores and antibiotic-containing (rifampicin) agar for culturing. These impact velocities are of particular interest for possible transport of bacterial spores from Mars to Phobos, and may have implications for planetary protection in a Phobos sample return mission. In addition, bacteria may reach similar velocities during a spacecraft crash (e.g., within components, or from spacecraft to surface materials during impact, etc.), raising concerns about forward contamination. The velocities of interest to transport of life between planets (panspermia) are somewhat higher, but these results complement shock-based experiments and contribute to the general discussion of impact survivability of organisms.

  18. High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

    Science.gov (United States)

    Arakawa, Yasuaki; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Fujioka, Hiroshi

    2016-08-01

    We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm-3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm-3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V-1 s-1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.

  19. Characterization of high quality Cu(In,Ga)Se{sub 2} thin films prepared by rf-magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bouchama, Idris [Departement d' Electronique, Faculte de Technologie, Universite de Msila (Algeria); Djessas, Kamal [Laboratoire Procedes Materiaux et Energie Solaire, PROMES-CNRS, Rambla de la Thermodynamique, Technosud, 66100 Perpignan (France); Bouloufa, Abdeslam [Laboratoire d' Electrochimie et Materiaux, Universite Ferhat Abbas de Setif (Algeria); Gauffier, Jean-Luc [Departement de Physique, INSA de Toulouse, 135, Avenue de Rangueil, 31077 Toulouse Cedex 4 (France)

    2013-01-15

    This paper reports the production of high quality polycrystalline thin layers of CuIn{sub 0.7}Ga{sub 0.3}Se{sub 2} (CIGS), using rf-magnetron sputtering, from a powder target. These films are designed to be used as absorbers in solar cells. The depositions were carried out at substrate temperatures below 250 C and glass substrates was used. The influence of the substrate temperatures on the crystalline quality as well as structural, optical and electrical properties of thin layers obtained has been studied. X-ray diffraction showed that the films were highly orientated in the (112) and/or (204)/(220) direction. In{sub 2}Se{sub 3} secondary phase was observed on the samples grown at lower substrate temperatures. The surface morphology of CIGS layers studied by Atomic Force Microscopy (AFM) and Scanning Electronic Microscopy (SEM) has been also discussed. The most surprising and exciting outcome of this study was that the as grown films were of near stoichiometric composition. Resistivity measurements were carried out using the four point probe method. The optical absorption showed that energy gap values are between 1.13 and 1.18 eV and rather sharp absorption fronts. Thin film resistivities are between 10.7 and 60.9 {Omega}.cm depending on the experimental growth conditions (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Discharge runaway in high power impulse magnetron sputtering of carbon: the effect of gas pressure, composition and target peak voltage

    Science.gov (United States)

    Vitelaru, Catalin; Aijaz, Asim; Constantina Parau, Anca; Kiss, Adrian Emil; Sobetkii, Arcadie; Kubart, Tomas

    2018-04-01

    Pressure and target voltage driven discharge runaway from low to high discharge current density regimes in high power impulse magnetron sputtering of carbon is investigated. The main purpose is to provide a meaningful insight of the discharge dynamics, with the ultimate goal to establish a correlation between discharge properties and process parameters to control the film growth. This is achieved by examining a wide range of pressures (2–20 mTorr) and target voltages (700–850 V) and measuring ion saturation current density at the substrate position. We show that the minimum plasma impedance is an important parameter identifying the discharge transition as well as establishing a stable operating condition. Using the formalism of generalized recycling model, we introduce a new parameter, ‘recycling ratio’, to quantify the process gas recycling for specific process conditions. The model takes into account the ion flux to the target, the amount of gas available, and the amount of gas required for sustaining the discharge. We show that this parameter describes the relation between the gas recycling and the discharge current density. As a test case, we discuss the pressure and voltage driven transitions by changing the gas composition when adding Ne into the discharge. We propose that standard Ar HiPIMS discharges operated with significant gas recycling do not require Ne to increase the carbon ionization.

  1. High-Resolution Electronics: Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet (Adv. Mater. 31/2016).

    Science.gov (United States)

    Liu, Xuying; Kanehara, Masayuki; Liu, Chuan; Sakamoto, Kenji; Yasuda, Takeshi; Takeya, Jun; Minari, Takeo

    2016-08-01

    On page 6568, T. Minari and co-workers describe spontaneous patterning based on the parallel vacuum ultraviolet (PVUV) technique, enabling the homogeneous integration of complex, high-resolution electronic circuits, even on large-scale, flexible, transparent substrates. Irradiation of PVUV to the hydrophobic polymer surface precisely renders the selected surface into highly wettable regions with sharply defined boundaries, which spontaneously guides a metal nanoparticle ink into a series of circuit lines and gaps with the widths down to a resolution of 1 μm. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  2. Limitations of patterning thin films by shadow mask high vacuum chemical vapor deposition

    International Nuclear Information System (INIS)

    Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

    2014-01-01

    A key factor in engineering integrated devices such as electro-optic switches or waveguides is the patterning of high quality crystalline thin films into specific geometries. In this contribution high vacuum chemical vapor deposition (HV-CVD) was employed to grow titanium dioxide (TiO 2 ) patterns onto silicon. The directed nature of precursor transport – which originates from the high vacuum environment during the process – allows shading certain regions on the substrate by shadow masks and thus depositing patterned thin films. While the use of such masks is an emerging field in stencil or shadow mask lithography, their use for structuring thin films within HV-CVD has not been reported so far. The advantage of the employed technique is the precise control of lateral spacing and of the distance between shading mask and substrate surface which is achieved by manufacturing them directly on the substrate. As precursor transport takes place in the molecular flow regime, the precursor impinging rates (and therefore the film growth rates) on the surface can be simulated as function of the reactor and shading mask geometry using a comparatively simple mathematical model. In the current contribution such a mathematical model, which predicts impinging rates on plain or shadow mask structured substrates, is presented. Its validity is confirmed by TiO 2 -deposition on plain silicon substrates (450 °C) using titanium tetra isopropoxide as precursor. Limitations of the patterning process are investigated by the deposition of TiO 2 on structured substrates and subsequent shadow mask lift-off. The geometry of the deposits is according to the mathematical model. Shading effects due to the growing film enables to fabricate deposits with predetermined variations in topography and non-flat top deposits which are complicated to obtain by classical clean room processes. As a result of the enhanced residual pressure of decomposition products and titanium precursors and the

  3. Search for Z′, vacuum (instability and hints of high-energy structures

    Directory of Open Access Journals (Sweden)

    Accomando Elena

    2016-01-01

    Full Text Available We study the high-energy behaviour of a class of anomaly-free abelian extensions of the Standard Model. We focus on the interplay among the phenomenological characterisation of the model and the use of precise renormalisation group methods. Using as boundary conditions regions of the parameter space at the verge of current LHC probe, interesting unification patterns emerge linked to thresholds belonging to a SO(10 grand unification theory (GUT. We stress how the evolution of the mixing between the two abelian factors may provide a valuable tool to address the candidate high-energy embedding. The emerging unification scenarios are then challenged to be perturbative and to allow for a stable vacuum.

  4. Shape Memory Alloy connectors for Ultra High Vacuum applications: a breakthrough for accelerator technologies

    CERN Document Server

    AUTHOR|(CDS)2091326; Garion, Cedric

    Beam-pipe coupling in particle accelerators is nowadays provided by metallic flanges that are tightly connected by several screws or heavy collars. Their installation and dismounting in radioactive areas contribute to the radiation doses received by the technical personnel. Owing to the increased proton-beam intensity and luminosity of the future High-Luminosity LHC (HL-LHC), radioactivity in some specific zones will be significantly higher than in the present LHC; the presence of the technical staff in these areas will be strictly controlled and minimized. Remote interventions are being considered, too. Shape Memory Alloys (SMAs) offer a unique possibility to generate tight connections and fast clamping/unclamping by remotely changing the temperature of the junction unit. In fact, SMAs exhibit unique strain and stress recovery capabilities which are related to reversible phase transition mechanisms, induced thermally or mechanically. In this PhD work, a novel Ultra-High Vacuum (UHV) coupling system based on ...

  5. Photonometers for coating and sputtering machines

    Directory of Open Access Journals (Sweden)

    Václavík J.

    2013-05-01

    Full Text Available The concept of photonometers (alternative name of optical monitor of a vacuum deposition process for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  6. Photonometers for coating and sputtering machines

    Science.gov (United States)

    Oupický, P.; Jareš, D.; Václavík, J.; Vápenka, D.

    2013-04-01

    The concept of photonometers (alternative name of optical monitor of a vacuum deposition process) for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR) for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

  7. Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

    Science.gov (United States)

    Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

    2018-01-01

    Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

  8. Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.

    Science.gov (United States)

    Li, Qiang; Zhang, Yuantao; Feng, Lungang; Wang, Zuming; Wang, Tao; Yun, Feng

    2018-02-15

    ITO nanowires have been successfully fabricated using a radio-frequency sputtering technique with a high RF-power of 250W. The fabrication of the ITO nanowires has been optimized through the study of oxygen flow rates, temperatures and RF-power. The difference in the morphology of the ITO nanowires prepared by using a new target and a used target has been first observed and the mechanism for the difference has been discussed in detail. A hollow structure and air voids within the nanowires are formed during the process of the nanowire growth. The ITO nanowires fabricated by this method has demonstrated good conductivity (15Ω/sq) and a transmittance of more than 64% at a wavelength longer than 550nm after annealing. Furthermore, detailed microstructure studies show that the ITO nanowires exhibit a large number of oxygen vacancies. As a result, it is expected that they can be useful for the fabrication of gas sensor devices. © 2018 IOP Publishing Ltd.

  9. High energy (MeV) ion beam modifications of sputtered MoS2 coatings on sapphire

    International Nuclear Information System (INIS)

    Bhattacharya, R.S.; Rai, A.K.; Erdemir, A.

    1991-01-01

    The present article reports on the results of our investigations of high-energy (MeV) ion irradiation on the microstructural and tribological properties of dc magnetron sputtered MoS 2 films. Films of thicknesses 500-7500 A were deposited on NaCl, Si and sapphire substrates and subsequently ion irradiated by 2 MeV Ag + ions at a dose of 5x10 15 cm -2 . Scanning and transmission electron microscopy. Rutherford backscattering and X-ray diffraction techniques were utilized to study the structural, morphological and compositional changes of the film due to ion irradiation. The friction coefficient and sliding life were determined by pin-on-disc tests. Both as-deposited and ion-irradiated films were found to be amorphous having a stoichiometry of MoS 1.8 . A low friction coefficient in the range 0.03-0.04 was measured for both as-deposited and ion-irradiated films. However, the sliding life of ion-irradiated film was found to increase more than tenfold compared to as-deposited films indicating improved bonding at the interface. (orig.)

  10. Influence of reactive oxygen species during deposition of iron oxide films by high power impulse magnetron sputtering

    Science.gov (United States)

    Stranak, V.; Hubicka, Z.; Cada, M.; Bogdanowicz, R.; Wulff, H.; Helm, C. A.; Hippler, R.

    2018-03-01

    Iron oxide films were deposited using high power impulse magnetron sputtering (HiPIMS) of an iron cathode in an argon/oxygen gas mixture at different gas pressures (0.5 Pa, 1.5 Pa, and 5.0 Pa). The HiPIMS system was operated at a repetition frequency f  =  100 Hz with a duty cycle of 1%. A main goal is a comparison of film growth during conventional and electron cyclotron wave resonance-assisted HiPIMS. The deposition plasma was investigated by means of optical emission spectroscopy and energy-resolved mass spectrometry. Active oxygen species were detected and their kinetic energy was found to depend on the gas pressure. Deposited films were characterized by means of spectroscopic ellipsometry and grazing incidence x-ray diffraction. Optical properties and crystallinity of as-deposited films were found to depend on the deposition conditions. Deposition of hematite iron oxide films with the HiPIMS-ECWR discharge is attributed to the enhanced production of reactive oxygen species.

  11. High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

    Science.gov (United States)

    He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

    2017-12-13

    It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

  12. Corrosion behavior of Al-Fe-sputtering-coated steel, high chromium steels, refractory metals and ceramics in high temperature Pb-Bi

    International Nuclear Information System (INIS)

    Abu Khalid, Rivai; Minoru, Takahashi

    2007-01-01

    Corrosion tests of Al-Fe-coated steel, high chromium steels, refractory metals and ceramics were carried out in high temperature Pb-Bi at 700 C degrees. Oxygen concentrations in this experiment were 6.8*10 -7 wt.% for Al-Fe-coated steels and 5*10 -6 wt.% for high chromium steels, refractory metals and ceramics. All specimens were immersed in molten Pb-Bi in a corrosion test pot for 1.000 hours. Coating was done with using the unbalanced magnetron sputtering (UBMS) technique to protect the steel from corrosion. Sputtering targets were Al and SUS-304. Al-Fe alloy was coated on STBA26 samples. The Al-Fe alloy-coated layer could be a good protection layer on the surface of steel. The whole of the Al-Fe-coated layer still remained on the base surface of specimen. No penetration of Pb-Bi into this layer and the matrix of the specimen. For high chromium steels i.e. SUS430 and Recloy10, the oxide layer formed in the early time could not prevent the penetration of Pb-Bi into the base of the steels. Refractory metals of tungsten (W) and molybdenum (Mo) had high corrosion resistance with no penetration of Pb-Bi into their matrix. Penetration of Pb-Bi into the matrix of niobium (Nb) was observed. Ceramic materials were SiC and Ti 3 SiC 2 . The ceramic materials of SiC and Ti 3 SiC 2 had high corrosion resistance with no penetration of Pb-Bi into their matrix. (authors)

  13. Laser fluorescence spectroscopy of sputtered uranium atoms

    International Nuclear Information System (INIS)

    Wright, R.B.; Pellin, M.J.; Gruen, D.M.; Young, C.E.

    1979-01-01

    Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238 U metal foil when bombarded by normally incident 500 to 3000 eV Ne + , Ar + , Kr + , and O 2 + . A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 100 0 K. 41 references

  14. Physical properties of homogeneous TiO.sub.2./sub. films prepared by high power impulse magnetron sputtering as a function of crystallographic phase and nanostructure

    Czech Academy of Sciences Publication Activity Database

    Straňák, Vítězslav; Čada, Martin; Quaas, M.; Block, S.; Bogdanowicz, R.; Kment, Štěpán; Wulff, H.; Hubička, Zdeněk; Helm, Ch.A.; Tichý, M.; Hippler, R.

    2009-01-01

    Roč. 42, č. 10 (2009), 105204/1-105204/12 ISSN 0022-3727 R&D Projects: GA AV ČR KAN301370701; GA AV ČR KJB100100805; GA AV ČR KAN400720701 Institutional research plan: CEZ:AV0Z10100522 Keywords : TiO 2 * high power magnteron sputtering * plasma diagnostic * film diagnostic Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.083, year: 2009

  15. Measuring the internal temperature of a levitated nanoparticle in high vacuum

    Science.gov (United States)

    Hebestreit, Erik; Reimann, René; Frimmer, Martin; Novotny, Lukas

    2018-04-01

    The interaction of an object with its surrounding bath can lead to a coupling between the object's internal degrees of freedom and its center-of-mass motion. This coupling is especially important for nanomechanical oscillators, which are among the most promising systems for preparing macroscopic objects in quantum mechanical states. Here we exploit this coupling to derive the internal temperature of a levitated nanoparticle from measurements of its center-of-mass dynamics. For a laser-trapped silica particle in high vacuum, we find an internal temperature of 1000 (60 )K . The measurement and control of the internal temperature of nanomechanical oscillators is of fundamental importance because black-body emission sets limits to the coherence of macroscopic quantum states.

  16. High current density M-type cathodes for vacuum electron devices

    International Nuclear Information System (INIS)

    Li Ji; Yu Zhiqiang; Shao Wensheng; Zhang Ke; Gao Yujuan; Yuan Haiqing; Wang Hui; Huang Kaizhi; Chen Qilue; Yan Suqiu; Cai Shaolun

    2005-01-01

    We investigated high current density emission capabilities of M-type cathodes used for vacuum electron devices (VEDs). The experimental results of emission and lifetime evaluating in both close-spaced diode structure and electron gun testing vehicles are given. Emission current densities measured in the diode structure at 1020 deg. C Br in the CW mode were above 10 A/cm 2 ; while in electron gun testing vehicles, emission current densities were above 8 A/cm 2 in CW mode and above 32 A/cm 2 in pulsed mode, respectively. The current density above 94 A/cm 2 has been acquired in no. 0306 electron gun vehicle while the practical temperature is 1060 deg. C Br . For a comparison some of the data from I-scandate cathodes are presented. Finally, several application examples in practical travelling wave tubes (TWTs) and multi beam klystrons (MBKs) are also reported

  17. Behavior of pressure rise and condensation caused by water evaporation under vacuum at high temperature

    International Nuclear Information System (INIS)

    Takase, Kazuyuki; Kunugi, Tomoaki; Yamazaki, Seiichiro; Fujii, Sadao

    1998-01-01

    Pressure rise and condensation characteristics during the ingress-of-coolant event (ICE) in fusion reactors were investigated using the preliminary ICE apparatus with a vacuum vessel (VV), an additional tank (AT) and an isolation valve (IV). A surface of the AT was cooled by water at RT. The high temperature and pressure water was injected into the VV which was heated up to 250degC and pressure and temperature transients in the VV were measured. The pressure increased rapidly with an injection time of the water because of the water evaporation. After the IV was opened and the VV was connected with the AT, the pressure in the VV decreased suddenly. From a series of the experiments, it was confirmed that control factors on the pressure rise were the flushing evaporation and boiling heat transfer in the VV, and then, condensation of the vapor after was effective to the depressurization in the VV. (author)

  18. New perspectives in vacuum high voltage insulation. I. The transition to field emission

    CERN Document Server

    Diamond, W T

    1998-01-01

    Vacuum high-voltage insulation has been investigated for many years. Typically, electrical breakdown occurs between two broad-area electrodes at electric fields 100-1000 times lower than the breakdown field (about 5000 MV/m) between a well-prepared point cathode and a broad-area anode. Explanations of the large differences remain unsatisfactory, usually evoking field emission from small projections on the cathode that are subject to higher peak fields. The field emission then produces secondary effects that lead to breakdown. This article provides a significant resolution to this long standing problem. Field emission is not present at all fields, but typically starts after some process occurs at the cathode surface. Three effects have been identified that produce the transition to field emission: work function changes; mechanical changes produced by the strong electrical forces on the electrode surfaces; and gas desorption from the anode with sufficient density to support an avalanche discharge. Material adso...

  19. Magnetic anisotropy in iron thin films evaporated under ultra-high vacuum

    International Nuclear Information System (INIS)

    Dinhut, J.F.; Eymery, J.P.; Krishnan, R.

    1992-01-01

    α-iron thin films with thickness ranging between 20 and 1500 nm have been evaporated using an electron gun under ultra-high vacuum conditions (5.10 -7 P). The columnar structure observed in cross-sectional TEM is related to the large surface diffusion. From Moessbauer spectra the spin orientation is deduced and found to be influenced by the column axis. Spins can be obtained perpendicularly to the film plane by rotating the substrte during the deposition. The magnetization of the samples is reduced by about 30% and the reduction attributed to the interstitial space which increases with the incident angle. The substrate rotation also decreases Ku( parallel ) by a factor 2 and increases Ku( perpendicular to ). (orig.)

  20. Energetic high-voltage breakdowns in vacuum over a large gap for ITER neutral beam accelerator

    Energy Technology Data Exchange (ETDEWEB)

    Villecroze, F., E-mail: Frederic.villecroze@cea.fr [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Christin, L.; Esch, H.P.L. de; Simonin, A. [CEA, IRFM, F-13108 Saint-Paul-Lez-Durance (France); Schunke, B.; Svensson, L.; Hemsworth, R.; Boilson, D. [ITER Organization, Route de Vinon sur Verdon, 13115 Saint Paul Lez Durance (France)

    2013-10-15

    Highlights: ► We performed energetic high voltage breakdowns up to 370 kV with a stored energy of 1 kJ. ► No breakdowns at 200 kV could be produced over a gap of 85 mm using 100 cm{sup 2} copper electrodes. ► Electrodes damage was visible after the experiment. ► The number of arcs impacts is orders of magnitude above the number of breakdowns. -- Abstract: CEA has undertaken tests to study the resilience of copper electrodes in vacuum against energetic high-voltage breakdowns using external capacitors to provide the energy. Earlier tests succeeded in dissipating a maximum of 150 J in a 30 mm gap, limited by the equivalent series resistance (ESR) in the external capacitors. Using new ones with an ESR that is a factor of 10 lower it was unsuccessfully tried to produce breakdowns at 200 kV over the 85 mm gap, despite the use of a UV flash lamp and a “field enhancement ring” (FER) that locally increased the electric field on the cathode by 50%. Consequently, the breakdowns had to be produced by raising the voltage to 300–350 kV while maintaining the gap at 85 mm. During these tests, single breakdowns dissipated up to 1140 J in the 85 mm vacuum gap. Inspection of the electrodes revealed that substantial amounts of copper appear have been evaporated from the anode and deposited on to the cathode. Also electrode deconditioning occurred.

  1. Sputtering of water ice

    International Nuclear Information System (INIS)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

  2. Single-crystal-like GdNdO{sub x} thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Ziwei; Xiao, Lei; Liang, Renrong, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn; Shen, Shanshan; Xu, Jun; Wang, Jing, E-mail: wang-j@tsinghua.edu.cn, E-mail: liangrr@tsinghua.edu.cn [Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084 (China)

    2016-06-15

    Single-crystal-like rare earth oxide thin films on silicon (Si) substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdO{sub x} (GNO) film was deposited using a high-temperature sputtering process at 500°C. A Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} mixture was used as the sputtering target, in which the proportions of Gd{sub 2}O{sub 3} and Nd{sub 2}O{sub 3} were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  3. Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

    Directory of Open Access Journals (Sweden)

    Ziwei Wang

    2016-06-01

    Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

  4. A vacuum sealed high emission current and transmission efficiency carbon nanotube triode

    Energy Technology Data Exchange (ETDEWEB)

    Di, Yunsong [School of Electronic Science & Engineering, Southeast University, Nanjing 210096 (China); Jiangsu Key Laboratory of Optoelectronic Technology, Nanjing Normal University, Nanjing 210023 (China); Wang, Qilong; Zhang, Xiaobing, E-mail: bell@seu.edu.cn; Lei, Wei; Du, Xiaofei; Yu, Cairu [School of Electronic Science & Engineering, Southeast University, Nanjing 210096 (China)

    2016-04-15

    A vacuum sealed carbon nanotubes (CNTs) triode with a concave and spoke-shaped Mo grid is presented. Due to the high aperture ratio of the grid, the emission current could be modulated at a relatively high electric field. Totally 75 mA emission current has been obtained from the CNTs cathode with the average applied field by the grid shifting from 8 to 13 V/μm. Whilst with the electron transmission efficiency of the grid over 56%, a remarkable high modulated current electron beam over 42 mA has been collected by the anode. Also contributed by the high aperture ration of the grid, desorbed gas molecules could flow away from the emission area rapidly when the triode has been operated at a relative high emission current, and finally collected by a vacion pump. The working pressure has been maintained at ∼1 × 10{sup −7} Torr, seldom spark phenomena occurred. Nearly perfect I-V curve and corresponding Fowler-Nordheim (FN) plot confirmed the accuracy of the measured data, and the emission current was long term stable and reproducible. Thusly, this kind of triode would be used as a high-power electron source.

  5. A new protection system against high voltage vacuum breakdowns developed for the Tore Supra neutral beam injector prototype

    International Nuclear Information System (INIS)

    Fumelli, M.; Jequier, F.; Pamela, J.

    1988-01-01

    A passive protection system against high voltage vacuum breakdowns has been developed. This system is based on the principle of oscillatory discharges in an RLC circuit coupled with the use of a diode. It allows the interruption of a vacuum breakdown in a few milliseconds. This study has been made for protecting some parts of the neutral beam injectors of the Tore Supra Tokamak experiment, but its field of application should be quite large. The conception of the whole high voltage electrical circuit developed for the Tore Supra injector prototype experiments is also presented

  6. In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

    Directory of Open Access Journals (Sweden)

    Hans F. Wardenga

    2015-02-01

    Full Text Available Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS and ex situ by X-ray diffraction (XRD, optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

  7. Highly radiation-resistant vacuum impregnation resin systems for fusion magnet insulation

    International Nuclear Information System (INIS)

    Fabian, P.E.; Munshi, N.A.; Denis, R.J.

    2002-01-01

    Magnets built for fusion devices such as the newly proposed Fusion Ignition Research Experiment (FIRE) need to be highly reliable, especially in a high radiation environment. Insulation materials are often the weak link in the design of superconducting magnets due to their sensitivity to high radiation doses, embrittlement at cryogenic temperatures, and the limitations on their fabricability. An insulation system capable of being vacuum impregnated with desirable properties such as a long pot-life, high strength, and excellent electrical integrity and which also provides high resistance to radiation would greatly improve magnet performance and reduce the manufacturing costs. A new class of insulation materials has been developed utilizing cyanate ester chemistries combined with other known radiation-resistant resins, such as bismaleimides and polyimides. These materials have been shown to meet the demanding requirements of the next generation of devices, such as FIRE. Post-irradiation testing to levels that exceed those required for FIRE showed no degradation in mechanical properties. In addition, the cyanate ester-based systems showed excellent performance at cryogenic temperatures and possess a wide range of processing variables, which will enable cost-effective fabrication of new magnets. This paper details the processing parameters, mechanical properties at 76 K and 4 K, as well as post-irradiation testing to dose levels surpassing 10 8 Gy

  8. Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Satyendra Kumar, E-mail: satyndra.singh.eee09@itbhu.ac.in [Department of Electronics and Communication Engineering, Model Institute of Engineering and Technology, Jammu, 181122 (India); Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, 211004 (India); Hazra, Purnima, E-mail: purnima.hazra@smvdu.ac.in [Department of Electronics and Communication Engineering, Shri Mata Vaishno Devi University, Katra, Jammu and Kashmir, 182320 (India)

    2017-04-01

    Highlights: • Synthesize ZnO nanoparticle thin film on p-Si substrate using RF sputtering method. • I–V and C–V characteristics of Si/ZnO heterojunction diode are studied. • High temperature performance is analyzed accounting barrier height inhomogeneities. • Gaussian distribution of BH inhomogeneities is considered to modify Richardson plot. • Modified R constant is 33.06 Acm{sup −2}K{sup −2}, i.e. nearer to theoretical value 32 Acm{sup −2}K{sup −2}. - Abstract: In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300–433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300–800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier

  9. Growth Al{sub x}Ga{sub 1−x}N films on Si substrates by magnetron sputtering and high ammoniated two-step method

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Xuewen, E-mail: wangxuew@nwu.edu.cn [School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Su, Xingxing; Hu, Feng; He, Lin; He, Lewan; Zhang, Zhiyong; Zhao, Wu [School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Wang, Kai-Ge; Wang, Shuang [Institute of Photonics & Photo-Technology, International Joint Research Centre of Photoelectric Technology & Nano-functional Materials and Application, Northwest University, Xi' an 710069 (China)

    2016-05-15

    In this paper, Al{sub x}Ga{sub 1−x}N films on Si substrates were synthesized with adjusting process parameters by magnetron sputtering and high ammoniated two-step method innovatively, while gallium oxide was used as gallium target, and aluminum was used as aluminum target, ammonia gas and nitrogen were used as nitrogen source. The influence of process parameters on the quality of Al{sub x}Ga{sub 1−x}N films was researched with X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Diffraction Spectrum (EDS) for the prepared samples. The results showed that Al{sub x}Ga{sub 1−x}N film can be grown on the Si substrate by magnetron sputtering and high ammoniated two-step method, and substrate temperature, sputtering power, nitrogen concentration also have a great impact on the quality of Al{sub x}Ga{sub 1−x}N film. The sample was developed along (002) peak preferred with high orientation at 200 °C. High-quality film could be grown when the x is 0.32 in Al{sub x}Ga{sub 1−x}N films grown in 300 °C substrate temperature, 150 W sputtering power and 50% nitrogen concentration conditions, which is used for gas sensitive sensor. And compared stress by the measurement of Raman with an excitation wavelength λ = 532 nm. The samples were tested by photoluminescence (PL), which indicated two light-emitting peaks at 405 nm and 645 nm when the excitation wavelength is 325 nm. The measure in Hall Effect Measurement System showed that the carrier concentration and mobility were changed with different Al components. - Highlights: • Grow Al{sub 0.32}Ga{sub 0.68}N films on Si by RF sputtering and high ammoniated two-step method. • The sample was developed along (002) peak preferred with high orientation at 200 °C. • The growth technics of the film was employed for the preparation of gas sensors. • Carrier concentration and mobility were changed with different Al components.

  10. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B V; Clarke, M; Hu, H; Betz, [Newcastle Univ., NSW (Australia). Dept. of Physics

    1994-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  11. Laser sputter neutral mass spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

    1993-12-31

    Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

  12. High performance W-AIN cermet solar coatings designed by modelling calculations and deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Qi-Chu Zhang [The University of Sydney (Australia). School of Physics; Shen, Y.G. [City University of Hong Kong (Hong Kong). Department of Manufacturing Engineering and Engineering Management

    2004-01-25

    High solar performance W-AIN cermet solar coatings were designed using a numerical computer model and deposited experimentally. In the numerical calculations aluminium oxynitride (AlON) was used as ceramic component. The dielectric functions and then complex refractive index of W-AlON cermet materials were calculated using the Sheng's approximation. The layer thickness and W metal volume fraction were optimised to achieve maximum photo-thermal conversion efficiency for W-AlON cermet solar coatings on an Al reflector with a surface AlON ceramic anti-reflection layer. Optimisation calculations show that the W-AlON cermet solar coatings with two and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimised calculated AlON/W-AlON/Al solar coating film with two cermet layers has a high solar absorptance of 0.953 and a low hemispherical emittance of 0.051 at 80{sup o}C for a concentration factor of 2. The AlN/W-AlN/Al solar selective coatings with two cermet layers were deposited using two metal target direct current magnetron sputtering technology. During the deposition of W-AlN cermet layer, both Al and W targets were run simultaneously in a gas mixture of argon and nitrogen. By substrate rotation a multi-sub-layer system consisting of alternating AlN ceramic and W metallic sub-layers was deposited that can be considered as a macro-homogeneous W-AlN cermet layer. A solar absorptance of 0.955 and nearly normal emittance of 0.056 at 80{sup o}C have been achieved for deposited W-AlN cermet solar coatings. (author)

  13. High performance W-AlN cermet solar coatings designed by modelling calculations and deposited by DC magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Qi-Chu [School of Physics, The University of Sydney, Sydney, NSW 2006 (Australia); Shen, Y.G. [Department of Manufacturing Engineering and Engineering Management, City University of Hong Kong (Hong Kong)

    2004-01-25

    High solar performance W-AlN cermet solar coatings were designed using a numerical computer model and deposited experimentally. In the numerical calculations aluminium oxynitride (AlON) was used as ceramic component. The dielectric function and then complex refractive index of W-AlON cermet materials were calculated using the Sheng's approximation. The layer thickness and W metal volume fraction were optimised to achieve maximum photo-thermal conversion efficiency for W-AlON cermet solar coatings on an Al reflector with a surface AlON ceramic anti-reflection layer. Optimisation calculations show that the W-AlON cermet solar coatings with two and three cermet layers have nearly identical solar absorptance, emittance and photo-thermal conversion efficiency that are much better than those for films with one cermet layer. The optimised calculated AlON/W-AlON/Al solar coating film with two cermet layers has a high solar absorptance of 0.953 and a low hemispherical emittance of 0.051 at 80C for a concentration factor of 2. The AlN/W-AlN/Al solar selective coatings with two cermet layers were deposited using two metal target direct current magnetron sputtering technology. During the deposition of W-AlN cermet layer, both Al and W targets were run simultaneously in a gas mixture of argon and nitrogen. By substrate rotation a multi-sub-layer system consisting of alternating AlN ceramic and W metallic sub-layers was deposited that can be considered as a macro-homogeneous W-AlN cermet layer. A solar absorptance of 0.955 and nearly normal emittance of 0.056 at 80C have been achieved for deposited W-AlN cermet solar coatings.

  14. Ultra high vacuum activities and required modification at 14 UD BARC-TIFR pelletron accelerator facility

    International Nuclear Information System (INIS)

    Sharma, S.C.; Ninawe, N.G.; Ramjilal; Bhagwat, P.V.; Salvi, S.B.

    2003-01-01

    Full text: The 14 UD pelletron accelerator is working round the clock since 1989. The accelerator is housed inside a tank which is 6 meter in diameter and 25 meter long. The accelerator tank is pressurized with SF 6 at 80 to 100 PSIG in order to achieve 14MV. In pelletron, ions are extracted from SNICS are pre-accelerated up to 300 keV before being injected into low energy accelerator tube. In the terminal which is at high potential (4MV to 14 MV), the ion beam pass through the stripper and positive ions with high charge states are produced. The high energy beams are focussed and analyzed by 90 deg magnet. The analyzed beam is then transported to the various experimental ports. In order to achieve uniform ultra high vacuum (to reduce the loss of intensity and spread in the energy of ions beams) in more than 100 metre and 100 mm diameter beam lines including magnet chambers and various beam diagnostic devices, combination of getter-ion pumps and turbo pumps are being used at Pelletron Accelerator Facility. The 14 UD pelletron is equipped with a combination of foil and gas stripper in high voltage terminal section. The foil and gas stripper in the terminal section are mainly used for stripping of light and heavy ions respectively. The gas stripper plays a great role for stripping of heavy ions and its efficiency depends on gas stripper parameters and supporting pumps. The gas stripper is originally installed with getter pumps. These pumps required periodic replacement of titanium cartridges and slowly the pumping speed used to diminish with time. A new recirculation turbo molecular pumps based system is being designed to improve good beam transmission. Details of design will be presented. Proton beam of tens of MeV energy and μA range current is in demand to carry out specific radiochemistry experiments in this facility. It is proposed to built and accommodate a proton experimental setup in the tower area of the existing facility. Details of required UHV system for

  15. Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

    International Nuclear Information System (INIS)

    Brooks, J.N.; Ruzic, D.N.

    1990-01-01

    The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

  16. Ultra high vacuum system of the 3 MeV electron beam accelerator

    International Nuclear Information System (INIS)

    Puthran, G.P.; Jayaprakash, D.; Mishra, R.L.; Ghodke, S.R.; Majumder, R.; Mittal, K.C.; Sethi, R.C.

    2003-01-01

    Full text: A 3 MeV electron beam accelerator is coming up at the electron beam centre, Kharghar, Navi Mumbai. A vacuum of the order of 1x10 -7 mbar is desired in the beam line of the accelerator. The UHV system is spread over a height of 6 meters. The total surface area exposed to vacuum is 65,000 cm 2 and the volume is 200 litres. Distributed pumping is planned, to avoid undesirable vacuum gradient between any two sections of the beam-line. The electron beam is scanned in an area of 6 cms x 100 cms and it comes out of the scan-horn through a titanium foil of 50 micron thick. Hence the vacuum system is designed in such a way that, in the event of foil rupture during beam extraction, the electron gun, accelerating column and the pumps can be protected from sudden air rush. The vacuum in the beam-line can also be maintained in this condition. After changing the foil, scan-horn area can be separately pumped to bring the vacuum level as desired and can be opened to the beam-line. The design, vacuum pumping scheme and the safety aspects are discussed in this paper

  17. Defects, stoichiometry, and electronic transport in SrTiO{sub 3-δ} epilayers: A high pressure oxygen sputter deposition study

    Energy Technology Data Exchange (ETDEWEB)

    Ambwani, P.; Xu, P.; Jeong, J. S.; Deng, R.; Mkhoyan, K. A.; Jalan, B.; Leighton, C., E-mail: leighton@umn.edu [Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455 (United States); Haugstad, G. [Characterization Facility, University of Minnesota, Minneapolis, Minnesota 55455 (United States)

    2016-08-07

    SrTiO{sub 3} is not only of enduring interest due to its unique dielectric, structural, and lattice dynamical properties, but is also the archetypal perovskite oxide semiconductor and a foundational material in oxide heterostructures and electronics. This has naturally focused attention on growth, stoichiometry, and defects in SrTiO{sub 3}, one exciting recent development being such precisely stoichiometric defect-managed thin films that electron mobilities have finally exceeded bulk crystals. This has been achieved only by molecular beam epitaxy, however (and to a somewhat lesser extent pulsed laser deposition (PLD)), and numerous open questions remain. Here, we present a study of the stoichiometry, defects, and structure in SrTiO{sub 3} synthesized by a different method, high pressure oxygen sputtering, relating the results to electronic transport. We find that this form of sputter deposition is also capable of homoepitaxy of precisely stoichiometric SrTiO{sub 3}, but only provided that substrate and target preparation, temperature, pressure, and deposition rate are carefully controlled. Even under these conditions, oxygen-vacancy-doped heteroepitaxial SrTiO{sub 3} films are found to have carrier density, mobility, and conductivity significantly lower than bulk. While surface depletion plays a role, it is argued from particle-induced X-ray emission (PIXE) measurements of trace impurities in commercial sputtering targets that this is also due to deep acceptors such as Fe at 100's of parts-per-million levels. Comparisons of PIXE from SrTiO{sub 3} crystals and polycrystalline targets are shown to be of general interest, with clear implications for sputter and PLD deposition of this important material.

  18. Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti-Cu thin films

    International Nuclear Information System (INIS)

    Stranak, Vitezslav; Hippler, Rainer; Cada, Martin; Hubicka, Zdenek; Tichy, Milan

    2010-01-01

    Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle ≅50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f=100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti-Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti + ,Cu + ) which creates a preionized medium.

  19. Characterization of sp3 bond content of carbon films deposited by high power gas injection magnetron sputtering method by UV and VIS Raman spectroscopy

    Science.gov (United States)

    Zdunek, Krzysztof; Chodun, Rafał; Wicher, Bartosz; Nowakowska-Langier, Katarzyna; Okrasa, Sebastian

    2018-04-01

    This paper presents the results of investigations of carbon films deposited by a modified version of the magnetron sputtering method - HiPGIMS (High Power Gas Injection Magnetron Sputtering). In this experiment, the magnetron system with inversely polarized electrodes (sputtered cathode at ground potential and positively biased, spatially separated anode) was used. This arrangement allowed us to conduct the experiment using voltages ranging from 1 to 2 kV and a power supply system equipped with 25/50 μF capacitor battery. Carbon films were investigated by VIS/UV Raman spectroscopy. Sp3/sp2 bonding ratio was evaluated basing the elementary components of registered spectra. Our investigation showed that sp3 bond content increases with discharge power but up to specific value only. In extreme conditions of generating plasma impulses, we detected a reversed relation of the sp3/sp2 ratio. In our opinion, a energy of plasma pulse favors nucleation of a sp3 phase because of a relatively higher ionization state but in extreme cases the influence of energy is reversed.

  20. Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

    Energy Technology Data Exchange (ETDEWEB)

    Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping, E-mail: yangping8@263.net; Sun, Hong; Huang, Nan

    2013-10-15

    The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO{sub 2} substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO{sub 2}, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

  1. Characterization of sp3 bond content of carbon films deposited by high power gas injection magnetron sputtering method by UV and VIS Raman spectroscopy.

    Science.gov (United States)

    Zdunek, Krzysztof; Chodun, Rafał; Wicher, Bartosz; Nowakowska-Langier, Katarzyna; Okrasa, Sebastian

    2018-04-05

    This paper presents the results of investigations of carbon films deposited by a modified version of the magnetron sputtering method - HiPGIMS (High Power Gas Injection Magnetron Sputtering). In this experiment, the magnetron system with inversely polarized electrodes (sputtered cathode at ground potential and positively biased, spatially separated anode) was used. This arrangement allowed us to conduct the experiment using voltages ranging from 1 to 2kV and a power supply system equipped with 25/50μF capacitor battery. Carbon films were investigated by VIS/UV Raman spectroscopy. Sp 3 /sp 2 bonding ratio was evaluated basing the elementary components of registered spectra. Our investigation showed that sp 3 bond content increases with discharge power but up to specific value only. In extreme conditions of generating plasma impulses, we detected a reversed relation of the sp 3 /sp 2 ratio. In our opinion, a energy of plasma pulse favors nucleation of a sp 3 phase because of a relatively higher ionization state but in extreme cases the influence of energy is reversed. Copyright © 2018 Elsevier B.V. All rights reserved.

  2. Chemical sputtering of graphite by H+ ions

    International Nuclear Information System (INIS)

    Busharov, N.P.; Gorbatov, E.A.; Gusev, V.M.; Guseva, M.I.; Martynenko, Y.V.

    1976-01-01

    In a study of the sputtering coefficient S for the sputtering of graphite by 10-keV H + ions as a function of the graphite temperature during the bombardment, it is found that at T> or =750degreeC the coefficient S is independent of the target temperature and has an anomalously high value, S=0.085 atom/ion. The high rate of sputtering of graphite by atomic hydrogen ions is shown to be due to chemical sputtering of the graphite, resulting primarily in the formation of CH 4 molecules. At T=1100degreeC, S falls off by a factor of about 3. A model for the chemical sputtering of graphite is proposed

  3. Changes in CR-39 proton sensitivity due to prolonged exposure to high vacuums relevant to the National Ignition Facility and OMEGA.

    Science.gov (United States)

    Manuel, M J-E; Rosenberg, M J; Sinenian, N; Rinderknecht, H; Zylstra, A B; Séguin, F H; Frenje, J; Li, C K; Petrasso, R D

    2011-09-01

    When used at facilities like OMEGA and the NIF, CR-39 is exposed to high vacuum environments before and after irradiation by charged particles and neutrons. Using an electrostatic linear accelerator at MIT, studies have been conducted to investigate the effects of high vacuum exposure on the sensitivity of CR-39 to fusion protons in the ~1-9 MeV energy range. High vacuum conditions, of order 10(-5) Torr, experienced by CR-39 samples at these facilities were emulated. It is shown that vacuum exposure times longer than ~16 h before proton irradiation result in a decrease in proton sensitivity, whereas no effect was observed for up to 67 h of vacuum exposure after proton irradiation. CR-39 sensitivity curves are presented for samples with prolonged exposure to high vacuum before and after proton irradiation. © 2011 American Institute of Physics

  4. Statistics of vacuum breakdown in the high-gradient and low-rate regime

    Science.gov (United States)

    Wuensch, Walter; Degiovanni, Alberto; Calatroni, Sergio; Korsbäck, Anders; Djurabekova, Flyura; Rajamäki, Robin; Giner-Navarro, Jorge

    2017-01-01

    In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

  5. Statistics of vacuum breakdown in the high-gradient and low-rate regime

    Directory of Open Access Journals (Sweden)

    Walter Wuensch

    2017-01-01

    Full Text Available In an increasing number of high-gradient linear accelerator applications, accelerating structures must operate with both high surface electric fields and low breakdown rates. Understanding the statistical properties of breakdown occurrence in such a regime is of practical importance for optimizing accelerator conditioning and operation algorithms, as well as of interest for efforts to understand the physical processes which underlie the breakdown phenomenon. Experimental data of breakdown has been collected in two distinct high-gradient experimental set-ups: A prototype linear accelerating structure operated in the Compact Linear Collider Xbox 12 GHz test stands, and a parallel plate electrode system operated with pulsed DC in the kV range. Collected data is presented, analyzed and compared. The two systems show similar, distinctive, two-part distributions of number of pulses between breakdowns, with each part corresponding to a specific, constant event rate. The correlation between distance and number of pulses between breakdown indicates that the two parts of the distribution, and their corresponding event rates, represent independent primary and induced follow-up breakdowns. The similarity of results from pulsed DC to 12 GHz rf indicates a similar vacuum arc triggering mechanism over the range of conditions covered by the experiments.

  6. Pumping behavior of sputter ion pumps

    International Nuclear Information System (INIS)

    Chou, T.S.; McCafferty, D.

    The ultrahigh vacuum requirements of ISABELLE is obtained by distributed pumping stations. Each pumping station consists of 1000 l/s titanium sublimation pump for active gases (N 2 , H 2 , O 2 , CO, etc.), and a 20 l/s sputter ion pump for inert gases (methane, noble gases like He, etc.). The combination of the alarming production rate of methane from titanium sublimation pumps (TSP) and the decreasing pumping speed of sputter ion pumps (SIP) in the ultrahigh vacuum region (UHV) leads us to investigate this problem. In this paper, we first describe the essential physics and chemistry of the SIP in a very clean condition, followed by a discussion of our measuring techniques. Finally measured methane, argon and helium pumping speeds are presented for three different ion pumps in the range of 10 -6 to 10 -11 Torr. The virtues of the best pump are also discussed

  7. Note: Hollow cathode lamp with integral, high optical efficiency isolation valve: A modular vacuum ultraviolet source

    International Nuclear Information System (INIS)

    Sloan Roberts, F.; Anderson, Scott L.

    2013-01-01

    The design and operating conditions of a hollow cathode discharge lamp for the generation of vacuum ultraviolet radiation, suitable for ultrahigh vacuum (UHV) application, are described in detail. The design is easily constructed, and modular, allowing it to be adapted to different experimental requirements. A thin isolation valve is built into one of the differential pumping stages, isolating the discharge section from the UHV section, both for vacuum safety and to allow lamp maintenance without venting the UHV chamber. The lamp has been used both for ultraviolet photoelectron spectroscopy of surfaces and as a “soft” photoionization source for gas-phase mass spectrometry

  8. Note: Hollow cathode lamp with integral, high optical efficiency isolation valve: A modular vacuum ultraviolet source

    Energy Technology Data Exchange (ETDEWEB)

    Sloan Roberts, F.; Anderson, Scott L. [Department of Chemistry, University of Utah, 315 S. 1400 E., Salt Lake City, Utah 84112 (United States)

    2013-12-15

    The design and operating conditions of a hollow cathode discharge lamp for the generation of vacuum ultraviolet radiation, suitable for ultrahigh vacuum (UHV) application, are described in detail. The design is easily constructed, and modular, allowing it to be adapted to different experimental requirements. A thin isolation valve is built into one of the differential pumping stages, isolating the discharge section from the UHV section, both for vacuum safety and to allow lamp maintenance without venting the UHV chamber. The lamp has been used both for ultraviolet photoelectron spectroscopy of surfaces and as a “soft” photoionization source for gas-phase mass spectrometry.

  9. Note: Hollow cathode lamp with integral, high optical efficiency isolation valve: a modular vacuum ultraviolet source.

    Science.gov (United States)

    Roberts, F Sloan; Anderson, Scott L

    2013-12-01

    The design and operating conditions of a hollow cathode discharge lamp for the generation of vacuum ultraviolet radiation, suitable for ultrahigh vacuum (UHV) application, are described in detail. The design is easily constructed, and modular, allowing it to be adapted to different experimental requirements. A thin isolation valve is built into one of the differential pumping stages, isolating the discharge section from the UHV section, both for vacuum safety and to allow lamp maintenance without venting the UHV chamber. The lamp has been used both for ultraviolet photoelectron spectroscopy of surfaces and as a "soft" photoionization source for gas-phase mass spectrometry.

  10. Co-sputtered optical films

    Energy Technology Data Exchange (ETDEWEB)

    Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

    1977-06-01

    The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

  11. Direct electroplating of copper on tantalum from ionic liquids in high vacuum: origin of the tantalum oxide layer.

    Science.gov (United States)

    Schaltin, Stijn; D'Urzo, Lucia; Zhao, Qiang; Vantomme, André; Plank, Harald; Kothleitner, Gerald; Gspan, Christian; Binnemans, Koen; Fransaer, Jan

    2012-10-21

    In this paper, it is shown that high vacuum conditions are not sufficient to completely remove water and oxygen from the ionic liquid 1-ethyl-3-methylimidazolium chloride. Complete removal of water demands heating above 150 °C under reduced pressure, as proven by Nuclear Reaction Analysis (NRA). Dissolved oxygen gas can only be removed by the use of an oxygen scavenger such as hydroquinone, despite the fact that calculations show that oxygen should be removed completely by the applied vacuum conditions. After applying a strict drying procedure and scavenging of molecular oxygen, it was possible to deposit copper directly on tantalum without the presence of an intervening oxide layer.

  12. Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

    Science.gov (United States)

    Routh, D. E.; Sharma, G. C. (Inventor)

    1984-01-01

    An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

  13. On niobium sputter coated cavities

    International Nuclear Information System (INIS)

    Arnolds-Mayer, G.; Kaufmann, U.; Downar, H.

    1988-01-01

    To coat copper cavities with a thin film of niobium, facilities for electropolishing and sputter deposition have been installed at Dornier. Experiments have been performed on samples to optimize electropolishing and deposition parameters. In this paper, characteristics concerning surface properties, adhesion of the niobium film to the copper substrate, and film properties were studied on planar samples. A 1.5 GHz single cell cavity made from oxygen free high conductivity (OFHC) copper was sputter coated twice. First rf measurements were performed in the temperature range from 300 K to 2 K

  14. High temperature vacuum furnace for the preparation of graphite targets for 14C dating by tandem accelerator mass spectrometry

    International Nuclear Information System (INIS)

    Lowe, D.C.; Bristow, P.; Judd, W.J.

    1985-02-01

    A simple and reliable furnace design capable of producing temperatures of up to 2800 deg. C is presented. The furnace has been specifically designed for the rapid and reliable production of graphite targets for 14 C dating purposes but may be used in a variety of applications requiring high temperatures under vacuum conditions

  15. High-resolution vacuum-ultraviolet photoabsorption spectra of 1-butyne and 2-butyne

    Energy Technology Data Exchange (ETDEWEB)

    Jacovella, U. [Laboratorium für Physikalische Chemie, ETH Zürich, 8093 Zürich (Switzerland); Holland, D. M. P. [STFC, Daresbury Laboratory, Daresbury, Warrington, Cheshire WA4 4AD (United Kingdom); Boyé-Péronne, S.; Gans, B. [Institut des Sciences Moléculaires d’Orsay, UMR 8214, CNRS and Université Paris-Sud, F-91405 Orsay (France); Oliveira, N. de; Joyeux, D.; Archer, L. E. [Synchrotron Soleil, L’Orme des Merisiers, F-91192 Gif-sur-Yvette (France); Lucchese, R. R. [Department of Chemistry, Texas A& M University, College Station, Texas 77843 (United States); Xu, H.; Pratt, S. T. [Argonne National Laboratory, Argonne, Illinois 60439 (United States)

    2015-07-21

    The absolute photoabsorption cross sections of 1- and 2-butyne have been recorded at high resolution by using the vacuum-ultraviolet Fourier-Transform spectrometer at the SOLEIL Synchrotron. Both spectra show more resolved structure than previously observed, especially in the case of 2-butyne. In this work, we assess the potential importance of Rydberg states with higher values of orbital angular momentum, l, than are typically observed in photoabsorption experiments from ground state molecules. We show how the character of the highest occupied molecular orbitals in 1- and 2-butyne suggests the potential importance of transitions to such high-l (l = 3 and 4) Rydberg states. Furthermore, we use theoretical calculations of the partial wave composition of the absorption cross section just above the ionization threshold and the principle of continuity of oscillator strength through an ionization threshold to support this conclusion. The new absolute photoabsorption cross sections are discussed in light of these arguments, and the results are consistent with the expectations. This type of argument should be valuable for assessing the potential importance of different Rydberg series when sufficiently accurate direct quantum chemical calculations are difficult, for example, in the n ≥ 5 manifolds of excited states of larger molecules.

  16. Microstructural characterisation of vacuum sintered T42 powder metallurgy high-speed steel after heat treatments

    International Nuclear Information System (INIS)

    Trabadelo, V.; Gimenez, S.; Iturriza, I.

    2009-01-01

    High-speed steel powders (T42 grade) have been uniaxially cold-pressed and vacuum sintered to full density. Subsequently, the material was heat treated following an austenitising + quenching + multitempering route or alternatively austenitising + isothermal annealing. The isothermal annealing route was designed in order to attain a hardness value of ∼50 Rockwell C (HRC) (adequate for structural applications) while the multitempering parameters were selected to obtain this value and also the maximum hardening of the material (∼66 HRC). Microstructural characterisation has been carried out by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The microstructure consists of a ferrous (martensitic or ferritic) matrix with a distribution of second phase particles corresponding to nanometric and submicrometric secondary carbides precipitated during heat treatment together with primary carbides. The identification of those secondary precipitates (mainly M 3 C, M 6 C and M 23 C 6 carbides) has allowed understanding the microstructural evolution of T42 high-speed steel under different processing conditions

  17. High-energy limit of collision-induced false vacuum decay

    Energy Technology Data Exchange (ETDEWEB)

    Demidov, Sergei; Levkov, Dmitry [Institute for Nuclear Research of the Russian Academy of Sciences,60-th October Anniversary Prospect 7a, Moscow, 117312 (Russian Federation)

    2015-06-17

    We develop a consistent semiclassical description of field-theoretic collision-induced tunneling at arbitrary high collision energies. As a playground we consider a (1+1)-dimensional false vacuum decay initiated by a collision of N particles at energy E, paying special attention to the realistic case of N=2 particles. We demonstrate that the cross section of this process is exponentially suppressed at all energies. Moreover, the respective suppressesion exponent F{sub N}(E) exhibits a specific behavior which is significant for our semiclassical method and assumed to be general: it decreases with energy, reaches absolute minimum F=F{sub min}(N) at a certain threshold energy E=E{sub rt}(N), and stays constant at higher energies. We show that the minimal suppression F{sub min}(N) and threshold energy can be evaluated using a special class of semiclassical solutions which describe exponentially suppressed transitions but nevertheless evolve in real time. Importantly, we argue that the cross section at energies above E{sub rt}(N) is computed perturbatively in the background of the latter solutions, and the terms of this perturbative expansion stay bounded in the infinite-energy limit. Transitions in the high-energy regime proceed via emission of many soft quanta with total energy E{sub rt}; the energy excess E−E{sub rt} remains in the colliding particles till the end of the process.

  18. High temperature superconductor based on thin strata reactively sputtered on metal targets. Final report

    International Nuclear Information System (INIS)

    Francke, C.; Meyer, B.; Wunderlich, R.; Mueller, J.

    1996-01-01

    SNS - Josephson contacts stable for a long period and dc SQUIDS working at 77 K were produced from the high temperature superconductor YBa 2 Cu 3 O 7-δ , where silver was used as the normal conductor. On MgO stages etched with ion beams, a defined section of the YBCO stratum can be produced and therefore a desired spacing can be set beteen the two YBCO electrodes. Structuring of the silver layer increases the normal conductive resistance of the Josephson contacts of the SQUIDs and therefore also the flux/voltage modulation stroke by up to 2 orders of mangitude. The dc SQUIDS in the so-called Ketchen design with 700 x 700 μm 2 square washers alone have a field sensitivity around 25 nT/Φ 0 . A multi-strata technology was developed from YBCO/STO/YBCO layer packages, which makes it possible to produce superconducting coils with corssovers and through contacts, which show critical currents of over 10 mA at 77 K. Using this multi-strata technology, flux transformers on 10 x 10 mm 2 STO substrates and on 20 x 20 mm 2 STO substrates were produced. Coupled to dc SQUIDs inductively in 'flip-chip' technique, such flux transformers supply a field sensitivity which is several times better than that of a flex transformer with a 10 x 10 mm 2 substrate. Field sensitivities around 0.2 nT/Φ 0 can be achieved. (orig./MM) [de

  19. Experimental program to study the physical vacuum: high-energy nucleus-nucleus collisions

    International Nuclear Information System (INIS)

    Willis, W.

    1981-01-01

    Quarks and gluons exist; they are nearly massless, but it is very hard or even impossible to knock them out of the proton. It is now widely believed that this strange state of affairs is due to the properties of the physical vacuum state as it now exists in our part of the Universe. On this view, the ground state of the vacuum is not that familiar in quantum electrodynamics (QED). That state is basically empty space, perturbed by fluctuations which occasionally give rise to a virtual electron-positron pair. In the quantum chromodynamic (QCD) theory of quarks and gluons, the stronger and more complicated forces give rise to a state which cannot be described as a perturbation on empty space. Instead, the physical vacuum has properties which resemble those of a physical medium. For example, the color field is completely excluded, or at least strongly repelled, from a macroscopic volume of physical vacuum. This effect confines the quarks and gluons which carry color, inside the hadrons. On the scale of hadrons, quantum fluctuations make the phenomena more complex, but a simple picture postulates that the strong color fields inside the hadron create a local volume of space more like the perturbative vacuum state, reverting to the physical vacuum state outside. This concept has been quantitatively expressed by the bag model, with some success. It seems that the physical vacuum has acquired properties reminiscent of Maxwell's ether. At least, so we are asked to believe. Maxwell introduced his ether for plausible reasons, but crucial experimental tests were found, and the theory was found wanting. In this talk, experiments for testing the idea that the physical vacuum is not identical to the perturbative one are discussed

  20. Low-Damage Sputter Deposition on Graphene

    Science.gov (United States)

    Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

    2013-03-01

    Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

  1. Onset temperature for Si nanostructure growth on Si substrate during high vacuum electron beam annealing.

    Science.gov (United States)

    Fang, F; Markwitz, A

    2009-05-01

    Silicon nanostructures, called Si nanowhiskers, are successfully synthesized on Si(100) substrate by high vacuum electron beam annealing. The onset temperature and duration needed for the Si nanowhiskers to grow was investigated. It was found that the onset and growth morphology of Si nanowhiskers strongly depend on the annealing temperature and duration applied in the annealing cycle. The onset temperature for nanowhisker growth was determined as 680 degrees C using an annealing duration of 90 min and temperature ramps of +5 degrees C s(-1) for heating and -100 degrees C s(-1) for cooling. Decreasing the annealing time at peak temperature to 5 min required an increase in peak temperature to 800 degrees C to initiate the nanowhisker growth. At 900 degrees C the duration for annealing at peak temperature can be set to 0 s to grow silicon nanowhiskers. A correlation was found between the variation in annealing temperature and duration and the nanowhisker height and density. Annealing at 900 degrees C for 0 s, only 2-3 nanowhiskers (average height 2.4 nm) grow on a surface area of 5 x 5 microm, whereas more than 500 nanowhiskers with an important average height of 4.6 nm for field emission applications grow on the same surface area for a sample annealed at 970 degrees C for 0 s. Selected results are presented showing the possibility of controlling the density and height of Si nanowhisker growth for field emission applications by applying different annealing temperature and duration.

  2. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-09-02

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10{sup -4} and 2.3x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10{sup -4} {omega}{center_dot}cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates.

  3. Ultra-High Speed Visualization of the Flashing Instability in Micron Size Nozzles under Vacuum Conditions

    KAUST Repository

    Alghamdi, Tariq A.

    2017-11-01

    I visualized the flash-boiling atomization of liquid jets released into a low pressure environment at frame rates of up to five million frames per second. Such a high temporal resolution allowed us to observe for the first time the bubble expansion mechanism that atomizes the jet. To visualize the dynamics in detail, I focused closely to the outflow of the nozzle using a long distance microscope objective. I documented an abrupt transition from a laminar to a fully external flashing jet by systematically reducing the ambient pressure. I performed experiments with different volatile liquids and using nozzles with different inner diameters. The inner diameters of the nozzles varied from 30 to 480 . Perfluorohexane (PFnH) was our main working fluid, but also methanol, ethanol and 1-bromopropane were tested. Surprisingly, minimum intensity profiles revealed spray angles close to ~360°, meaning drops are ejected in all directions. Also, I measured speeds of bubble expansion up to 140 m/s. That is 45 times faster than the upper bound for inertial growth speed in complete vacuum from the Rayleigh-Plesset equation. I also calculated the trajectories of the ejected droplets as well as the drop speed distribution using particle tracking. I expect that our results bring new insight into the flash-boiling atomization mechanism.

  4. Ultra-high vacuum target assembly for charged particle irradiations in the materials research field

    International Nuclear Information System (INIS)

    Bressers, J.; Cassanelli, G.; Cat, R. de; Kohnen, H.; Gherardi, G.

    1978-01-01

    A target assembly designed for ion irradiation and ion implantation experiments on different particle accelerators is described. It consists of a target chamber separated from the beam line by a thin metal window, thus allowing implantations to be carried out under ultra-high vacuum conditions. Homogeneous in-depth distribution of the implanted ion species is realized by rotating the target about an axis perpendicular to the ion beam (rocking). The target holder is driven by means of a stepping motor with a constant step angle and a rocking device controller containing the required rocking angle-dwell time relation. Ion beam homogeneity over a sufficiently large target area is arrived at by transforming the Gaussian beam intensity profile into a flat beam intensity distribution by means of an electrostatic ring lens. The beam intensity profile is monitored by means of a specially designed ion beam monitor based on the Nipkov disc principle. A toroidal beam current monitoring transformer continuously measures the total beam current. Beam scanners and current measuring collimators complete the beam analysing equipment

  5. High rate deposition of transparent conducting oxide thin films by vacuum arc plasma evaporation

    International Nuclear Information System (INIS)

    Minami, Tadatsugu; Ida, Satoshi; Miyata, Toshihiro

    2002-01-01

    Transparent conducting oxide (TCO) thin films have been deposited at a high rate above 370 nm/min by vacuum arc plasma evaporation (VAPE) using sintered oxide fragments as the source material. It was found that the deposition rate of TCO films was strongly dependent on the deposition pressure, whereas the obtained electrical properties were relatively independent of the pressure. Resistivities of 5.6x10 -4 and 2.3x10 -4 Ω·cm and an average transmittance above 80% (with substrate included) in the visible range were obtained in Ga-doped ZnO (GZO) thin films deposited at 100 and 350 deg. C, respectively. In addition, a resistivity as low as 1.4x10 -4 Ω·cm and an average transmittance above 80% were also obtained in indium-tin-oxide (ITO) films deposited at 300 deg. C. The deposited TCO films exhibited uniform distributions of resistivity and thickness on large area substrates

  6. High aspect ratio lead zirconate titanate tube structures: I. Template assisted fabrication - vacuum infiltration method

    Directory of Open Access Journals (Sweden)

    Vladimír Kovaľ

    2012-03-01

    Full Text Available Polycrystalline Pb(Zr0.52Ti0.48O3 (PZT microtubes are fabricated by a vacuum infiltration method. The method is based on repeated infiltration of precursor solution into macroporous silicon (Si templates at a sub-atmospheric pressure. The pyrolyzed PZT tubes of a 2-µm outer diameter, extending to over 30 µm in length were released from the template using a selective isotropic-pulsed XeF2 reactive ion etching of silicon. Free-standing microtubes, partially anchored at the bottom of the Si template, were then crystallized in pure oxygen atmosphere at 750 °C for 2 min using a rapid thermal annealer. The perovskite phase of the final PZT tubes was confirmed by X-ray diffraction (XRD analysis. The XRD spectrum also revealed a small amount of the pyrochlore phase in the structure and signs of possible fluoride contamination caused most likely by the XeF2 etching process. The surface morphology was examined using scanning electron microscopy. It was demonstrated that the whole surface of the pore walls was conformally coated during the repeated infiltration of templates, resulting in straight tubes with closed tips formed on the opposite ends as replicas of the pore bottoms. These high aspect ratio ferroelectric structures are suggested as building units for developing miniaturized electronic devices, such as memory storage (DRAM trenched capacitors, piezoelectric scanners and actuators, and are of fundamental value for the theory of ferroelectricity in systems with low dimensionality.

  7. Superconducting properties of magnetron sputtered high T/sub c/ thin films containing oxide compounds of yttrium, bismuth, or thallium

    International Nuclear Information System (INIS)

    Kang, J.H.; Kampwirth, R.T.; Gray, K.E.

    1989-01-01

    The authors have used multiple source magnetron sputtering to prepare thin films of Y-Ba-Cu-O, Bi-Ca-Sr-Cu-O, and Tl-Ca-Ba-Cu-O on (100) SrTiO/sub 3/, (100) MgO, and ZrO/sub 2/-9%Y/sub 2/O/sub 3/ substrates. Y-Ba-Cu-O films grow best on SrTiO/sub 3/ with mostly an a-axis orientation. Stoichiometry, particularly the Ba/Ca ratio must be within 2% of the correct value to obtain narrow ΔT/sub c/ transitions. Conversely the 80K phase of Bi-Ca-Sr-Cu-O films grows best on MgO substrates and has a predominant c-axis orientation. The requirements on composition are less stringent, however, the annealing temperature must be held within a narrow around 865 0 C to obtain the best films. The best films of Tl-Ca-Ba-Cu-O compounds are grown on (100) oriented and polycrystalline ZrO/sub 2/ substrates. The highest transition temperature, T/sub c0/, where the resistance goes zero is about 114K in the Tl/sub 2/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub x/ phase and 100-105K in Tl/sub 2/Ba/sub 2/Ca/sub 1/Cu/sub 2/O/sub x/ and Tl/sub 1/Ba/sub 2/Ca/sub 2/Cu/sub 3/O/sub x/ phase samples. The upper critical field measurements show high anisotropies in the critical field slopes (≥70 for Tl-Ba-Ca-Cu-O compounds and ∼15 for Bi-Sr-Ca-Cu-O compounds), as might be expected from highly oriented materials. The authors compare the preparation conditions and superconducting properties, including T/sub c/, ΔT/sub c/, dB/sub c2//dT (parallel and perpendicular to film surface), of all three compounds

  8. High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

    2011-01-15

    We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  9. Solar system sputtering

    Science.gov (United States)

    Tombrello, T. A.

    1982-01-01

    The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

  10. Reactive sputter deposition

    CERN Document Server

    Mahieu, Stijn

    2008-01-01

    In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

  11. Reactive magnetron sputtering model at making Ti-TiOx coatings

    International Nuclear Information System (INIS)

    Luchkin, A G; Kashapov, N F

    2014-01-01

    Mathematical model of reactive magnetron sputtering for plant VU 700-D is described. Approximating curves for experimental current-voltage characteristic for two gas input schemas are shown. Choice of gas input schema influences on model parameters (mainly on pumping speed). Reactive magnetron sputtering model allows develop technology of Ti - TiO x coatings deposition without changing atmosphere and pressure in vacuum chamber

  12. Non-stoichiometry of MoS2 phase prepared by sputtering

    International Nuclear Information System (INIS)

    Ito, T.; Nakajima, K.

    1978-01-01

    The lattice parameters and S/Mo atomic ratio in sputtered MoS 2 films have been examined as a function of sputtering conditions, especially the vacuum pressure in the chamber. It was found that the deposited films had a defect MoS 2 structure ranging from 1.6 to 2 in S/Mo ratio, depending on the pressure. (author)

  13. Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing.

    Science.gov (United States)

    Wi, Jae-Hyung; Kim, Tae Gun; Kim, Jeong Won; Lee, Woo-Jung; Cho, Dae-Hyung; Han, Won Seok; Chung, Yong-Duck

    2015-08-12

    We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

  14. Design and performance of an in situ high vacuum STM in beam line at 15 UD pelletron accelerator

    International Nuclear Information System (INIS)

    Singh, J.P.; Tripathi, A.; Ahuja, R.; Dutt, R.N.; Kanjilal, D.; Mehta, G.K.; Raychoudhuri, A.K.

    2000-01-01

    The design, installation and performance of an in situ high vacuum STM in the materials science beam line of 15 UD tandem Pelletron accelerator, NSC are reported. The scanning tunneling microscope (STM) has imaged highly oriented pyrolytic graphite (HOPG) surfaces with atomic resolution. Local current-voltage spectroscopy has also been performed on p-type Si (111) samples. A band gap of 1.09 ± 0.1 eV was calculated. (author)

  15. A vacuum-sealed, gigawatt-class, repetitively pulsed high-power microwave source

    Science.gov (United States)

    Xun, Tao; Fan, Yu-wei; Yang, Han-wu; Zhang, Zi-cheng; Chen, Dong-qun; Zhang, Jian-de

    2017-06-01

    A compact L-band sealed-tube magnetically insulated transmission line oscillator (MILO) has been developed that does not require bulky external vacuum pump for repetitive operations. This device with a ceramic insulated vacuum interface, a carbon fiber array cathode, and non-evaporable getters has a base vacuum pressure in the low 10-6 Pa range. A dynamic 3-D Monte-Carlo model for the molecular flow movement and collision was setup for the MILO chamber. The pulse desorption, gas evolution, and pressure distribution were exactly simulated. In the 5 Hz repetition rate experiments, using a 600 kV diode voltage and 48 kA beam current, the average radiated microwave power for 25 shots is about 3.4 GW in 45 ns pulse duration. The maximum equilibrium pressure is below 4.0 × 10-2 Pa, and no pulse shortening limitations are observed during the repetitive test in the sealed-tube condition.

  16. Study of SiO2 surface sputtering by a 250-550 keV He+ ion beam during high-resolution Rutherford backscattering measurements

    International Nuclear Information System (INIS)

    Kusanagi, Susumu; Kobayashi, Hajime

    2006-01-01

    Decreases in oxygen signal intensities in spectra of high-resolution Rutherford backscattering spectrometry (HRBS) were observed during measurements on a 5-nm thick SiO 2 layer on a Si substrate when irradiated by 250-550 keV He + ions. Shifts in an implanted arsenic profile in a 5-nm thick SiO 2 /Si substrate were also observed as a result of He + ion irradiation. These results lead to the conclusion that the SiO 2 surface was sputtered by He + ions in this energy range

  17. Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Arroyo-Hernández María

    2011-01-01

    Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

  18. Investigation of nanoporous platinum thin films fabricated by reactive sputtering: Application as micro-SOFC electrode

    Science.gov (United States)

    Jung, WooChul; Kim, Jae Jin; Tuller, Harry L.

    2015-02-01

    Highly porous Pt thin films, with nano-scale porosity, were fabricated by reactive sputtering. The strategy involved deposition of thin film PtOx at room temperature, followed by the subsequent decomposition of the oxide by rapid heat treatment. The resulting films exhibited percolating Pt networks infiltrated with interconnected nanosized pores, critical for superior solid oxide fuel cell cathode performance. This approach is particularly attractive for micro-fabricated solid oxide fuel cells, since it enables fabrication of the entire cell stack (anode/electrolyte/cathode) within the sputtering chamber, without breaking vacuum. In this work, the morphological, crystallographic and chemical properties of the porous electrode were systematically varied by control of deposition conditions. Oxygen reduction reaction kinetics were investigated by means of electrochemical impedance spectroscopy, demonstrating the critical role of nano-pores in achieving satisfactory micro-SOFC cathode performance.

  19. Proceedings of the 5th meeting on ultra high vacuum techniques for accelerators and storage rings

    International Nuclear Information System (INIS)

    Horikoshi, Gen-ichi

    1984-08-01

    This is the proceedings of the 5th meeting on UHV Techniques for Accelerators and Storage Rings held at KEK, March 26-27, 1984. More than 110 vacuum scientists attended the meeting, and 23 reports were presented. Main subjects were, of course, concerning with the vacuum systems for large accelerators and plasma devices under planning or construction in Japan. At the same time, many reports on the general problems of vacumm science were also presented. The subjects of these reports were outgassing phenomenon, surface problems, new type UHV pumps and others. (author)

  20. Effect of the degree of high power impulse magnetron sputtering utilisation on the structure and properties of TiN films

    Energy Technology Data Exchange (ETDEWEB)

    Hovsepian, Papken Eh.; Sugumaran, Arunprabhu A., E-mail: Arunprabhu.ArunachalamSugumaran@student.shu.ac.uk; Purandare, Yashodhan; Loch, Daniel A.L.; Ehiasarian, Arutiun P.

    2014-07-01

    TiN films were deposited using high power impulse magnetron sputtering (HIPIMS) enabled four cathode industrial size coating system equipped with HIPIMS power supplies. The standard version of this system allows control over the ion bombardment during coating growth by varying the strength of the electromagnetic field of the unbalancing coils and bias voltage applied to the substrate. The coatings were produced in different coating growth conditions achieved in combined HIPIMS — direct current (dc) unbalanced magnetron sputtering (HIPIMS/UBM) processes where HIPIMS was used as an additional tool to manipulate the ionisation degree in the plasma. Four cathode combinations were explored with increasing contribution of HIPIMS namely 4UBM (pure UBM), 1HIPIMS + 3UBM, 2HIPIMS + 2UBM and 2HIPIMS (pure HIPIMS) to deposit TiN coatings. Optical emission spectroscopy (OES) measurements were carried out to examine the plasma generated by the various combinations of HIPIMS and UBM cathodes. The micro-structural study was done by scanning electron microscopy (SEM). X-ray diffraction (XRD) technique was used to calculate the residual stress and texture parameter. It has been revealed that the residual stress can be controlled in a wide range from − 0.22 GPa to − 11.67 GPa by intelligent selection of the degree of HIPIMS utilisation, strength of the electromagnetic field of the unbalancing coils and the bias voltage applied to the substrate while maintaining the stoichiometry of the coatings. The effect of the degree of HIPIMS utilisation on the microstructure, texture and residual stress is discussed. Combining HIPIMS with dc-UBM sputtering is also seen as an effective tool for improving the productivity of the deposition process. - Highlights: • High {Ti"1"+} in the plasma with increasing number of HIPIMS sources • Residual stress can be manipulated in a wide range. • Texture can be altered. • The 2HIPIMS + 2UBM combination appears to be the most advantageous.

  1. Energy conversion assessment of vacuum, slow and fast pyrolysis processes for low and high ash paper waste sludge

    International Nuclear Information System (INIS)

    Ridout, Angelo J.; Carrier, Marion; Collard, François-Xavier; Görgens, Johann

    2016-01-01

    Highlights: • Vacuum, slow and fast pyrolysis of low and high ash paper waste sludge (PWS) is compared. • Reactor temperature and pellet size optimised to maximise liquid and solid product yields. • Gross energy recovery from solid and liquid was assessed. • Fast pyrolysis of low and high ash PWS offers higher energy conversions. - Abstract: The performance of vacuum, slow and fast pyrolysis processes to transfer energy from the paper waste sludge (PWS) to liquid and solid products was compared. Paper waste sludges with low and high ash content (8.5 and 46.7 wt.%) were converted under optimised conditions for temperature and pellet size to maximise both product yields and energy content. Comparison of the gross energy conversions, as a combination of the bio-oil/tarry phase and char (EC_s_u_m), revealed that the fast pyrolysis performance was between 18.5% and 20.1% higher for the low ash PWS, and 18.4% and 36.5% higher for high ash PWS, when compared to the slow and vacuum pyrolysis processes respectively. For both PWSs, this finding was mainly attributed to higher production of condensable organic compounds and lower water yields during FP. The low ash PWS chars, fast pyrolysis bio-oils and vacuum pyrolysis tarry phase products had high calorific values (∼18–23 MJ kg"−"1) making them promising for energy applications. Considering the low calorific values of the chars from alternative pyrolysis processes (∼4–7 MJ kg"−"1), the high ash PWS should rather be converted to fast pyrolysis bio-oil to maximise the recovery of usable energy products.

  2. High power Nd:YAG laser welding in manufacturing of vacuum vessel of fusion reactor

    Energy Technology Data Exchange (ETDEWEB)

    Jokinen, Tommi E-mail: tommi.jokinen@vtt.fi; Kujanpaeae, Veli E-mail: veli.kujanpaa@lut.fi

    2003-09-01

    Laser welding has shown many advantages over traditional welding methods in numerous applications. The advantages are mainly based on very precise and powerful heat source of laser light, which change the phenomena of welding process when compared with traditional welding methods. According to the phenomena of the laser welding, penetration is deeper and thus welding speed is higher. Because of the precise power source and high-welding speed, the heat input to the workpiece is small and distortions are reduced. Also, the shape of laser weld is less critical for distortions than traditional welds. For welding thick sections, the usability of lasers is not so practical than with thin sheets, because with power levels of present Nd:YAG lasers depth of penetration is limited up to about 10 mm by single-pass welding. One way to overcome this limitation is to use multi-pass laser welding, in which narrow gap and filler wire is applied. By this process, thick sections can be welded with smaller heat input and then smaller distortions and the process seems to be very effective comparing 'traditional' welding methods, not only according to the narrower gap. Another way to increase penetration and fill the groove is by using the so-called hybrid process, in which laser and GMAW (gas metal arc welding) are combined. In this paper, 20-mm thick austenitic stainless steel was welded using narrow gap configuration with a multi-pass technique. Two welding procedures were used: Nd:YAG laser welding with filler wire and with addition of GMAW, the hybrid process. In the welding experiments, it was noticed that both processes are feasible for welding thicker sections with good quality and with minimal distortions. Thus, these processes should be considered when the evaluation of the welding process is done for joining vacuum vessel sectors of ITER.

  3. High performance thermal insulation systems (HiPTI). Vacuum insulated products (VIP). Proceedings of the international conference and workshop

    Energy Technology Data Exchange (ETDEWEB)

    Zimmermann, M.; Bertschinger, H.

    2001-07-01

    These are the proceedings of the International Conference and Workshop held at EMPA Duebendorf, Switzerland, in January 2001. The papers presented at the conference's first day included contributions on the role of high-performance insulation in energy efficiency - providing an overview of available technologies and reviewing physical aspects of heat transfer and the development of thermal insulation as well as the state of the art of glazing technologies such as high-performance and vacuum glazing. Also, vacuum-insulated products (VIP) with fumed silica, applications of VIP systems in technical building systems, nanogels, VIP packaging materials and technologies, measurement of physical properties, VIP for advanced retrofit solutions for buildings and existing and future applications for advanced low energy building are discussed. Finally, research and development concerning VIP for buildings are reported on. The workshops held on the second day covered a preliminary study on high-performance thermal insulation materials with gastight porosity, flexible pipes with high performance thermal insulation, evaluation of modern insulation systems by simulation methods as well as the development of vacuum insulation panels with a stainless steel envelope.

  4. Sputtering of water ice

    DEFF Research Database (Denmark)

    Baragiola, R.A.; Vidal, R.A.; Svendsen, W.

    2003-01-01

    We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

  5. Argonne inverted sputter source

    International Nuclear Information System (INIS)

    Yntema, J.L.; Billquist, P.J.

    1983-01-01

    The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

  6. The assessment of non-metallic inclusions in steels and nickel alloys for ultra high vacuum applications

    International Nuclear Information System (INIS)

    Meriguet, P.J.-L.

    1992-01-01

    The presence of non-metallic inclusions in steels and nickel alloys may create leak-paths under Ultra High Vacuum conditions. This paper shows the application of the ASTM E45 standard to the assessment of these inclusions and gives some design recommendations. Three case-histories encountered at the Joint European Torus Joint Undertaking and a possible explanation of the phenomenon are also presented. (Author)

  7. High-temperature deformation and rupture behavior of internally-pressurized Zircaloy-4 cladding in vacuum and steam enivronments

    International Nuclear Information System (INIS)

    Chung, H.M.; Garde, A.M.; Kassner, T.F.

    1977-01-01

    The high-temperature diametral expansion and rupture behavior of Zircaloy-4 fuel-cladding tubes have been investigated in vacuum and steam environments under transient-heating conditions that are of interest in hypothetical loss-of-coolant accident situations in light-water reactors. The effects of internal pressure, heating rate, axial constraint, and localized temperature nonuniformities in the cladding on the maximum circumferential strain have been determined for burst temperatures between approximately 650 and 1350 0 C

  8. Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

    Science.gov (United States)

    Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

    2015-12-19

    Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

  9. Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

    Directory of Open Access Journals (Sweden)

    Marietta Seifert

    2015-12-01

    Full Text Available Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

  10. A 10 mK scanning tunneling microscope operating in ultra high vacuum and high magnetic fields.

    Science.gov (United States)

    Assig, Maximilian; Etzkorn, Markus; Enders, Axel; Stiepany, Wolfgang; Ast, Christian R; Kern, Klaus

    2013-03-01

    We present design and performance of a scanning tunneling microscope (STM) that operates at temperatures down to 10 mK providing ultimate energy resolution on the atomic scale. The STM is attached to a dilution refrigerator with direct access to an ultra high vacuum chamber allowing in situ sample preparation. High magnetic fields of up to 14 T perpendicular and up to 0.5 T parallel to the sample surface can be applied. Temperature sensors mounted directly at the tip and sample position verified the base temperature within a small error margin. Using a superconducting Al tip and a metallic Cu(111) sample, we determined an effective temperature of 38 ± 1 mK from the thermal broadening observed in the tunneling spectra. This results in an upper limit for the energy resolution of ΔE = 3.5 kBT = 11.4 ± 0.3 μeV. The stability between tip and sample is 4 pm at a temperature of 15 mK as demonstrated by topography measurements on a Cu(111) surface.

  11. High performance inkjet printed phosphorescent organic light emitting diodes based on small molecules commonly used in vacuum processes

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Sung-Hoon [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Jang-Joo, E-mail: jjkim@snu.ac.kr [Department of Materials Science and Engineering, Seoul National University, Seoul, 151-742 (Korea, Republic of); Kim, Hyong-Jun, E-mail: hkim@kongju.ac.kr [Department of Chemical Engineering, Kongju National University, Cheonan, 330-717 (Korea, Republic of)

    2012-09-30

    High efficiency phosphorescent organic light emitting diodes (OLEDs) are realized by inkjet printing based on small molecules commonly used in vacuum processes in spite of the limitation of the limited solubility. The OLEDs used the inkjet printed 5 wt.% tris(2-phenylpyridine)iridium(III) (Ir(ppy){sub 3}) doped in 4,4 Prime -Bis(carbazol-9-yl)biphenyl (CBP) as the light emitting layer on various small molecule based hole transporting layers, which are widely used in the fabrication of OLEDs by vacuum processes. The OLEDs resulted in the high power and the external quantum efficiencies of 29.9 lm/W and 11.7%, respectively, by inkjet printing the CBP:Ir(ppy){sub 3} on a 40 nm thick 4,4 Prime ,4 Double-Prime -tris(carbazol-9-yl)triphenylamine layer. The performance was very close to a vacuum deposited device with a similar structure. - Highlights: Black-Right-Pointing-Pointer Effective inkjet printed organic light emitting diode (OLED) technique is explored. Black-Right-Pointing-Pointer Solution process on commonly used hole transporting material (HTM) is demonstrated. Black-Right-Pointing-Pointer Triplet energy overlap of HTM and emitting material is the key to the performance. Black-Right-Pointing-Pointer Simple inkjet printed OLED provides the high current efficiency of 40 cd/A.

  12. Overcoming challenges to the formation of high-quality polycrystalline TiO{sub 2}:Ta transparent conducting films by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Neubert, M.; Cornelius, S.; Fiedler, J. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); Gebel, T.; Liepack, H. [DTF Technology GmbH, 01108 Dresden (Germany); Kolitsch, A. [Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden (Germany); HZDR Innovation GmbH, 01328 Dresden (Germany); Vinnichenko, M. [Fraunhofer-Institut für Keramische Technologien und Systeme, 01277 Dresden (Germany)

    2013-08-28

    The work is focused on understanding the physical processes responsible for the modification of the structure, electrical and optical properties of polycrystalline TiO{sub 2}:Ta films formed by annealing of initially amorphous films grown by direct current magnetron sputtering of electrically conductive ceramic targets. It is shown that fine tuning of the oxygen content during deposition of amorphous TiO{sub 2}:Ta films is critical to achieving low resistivity and high optical transmittance after annealing. Increasing the total pressure during magnetron sputter deposition is shown to decrease the sensitivity of the annealed films to the oxygen flow variation during deposition of the initially amorphous layers. Polycrystalline anatase TiO{sub 2}:Ta films of low electrical resistivity (ρ{sub H} = 1.5 × 10{sup −3}Ω cm), high free electron mobility (μ{sub H} = 8 cm{sup 2}/Vs), and low extinction (k{sub 550nm} = 0.006) are obtained in this way at a total pressure of 2 Pa. The dependence of the polycrystalline film electrical properties on the oxygen content is discussed in terms of Ta dopant electrical activation/deactivation taking into account the formation of compensating defects at different oxygen pressures. The temperature-dependent transport of the polycrystalline anatase TiO{sub 2}:Ta films is investigated showing the dominant role of the optical phonon scattering in the case of films with an optimum Ti/O ratio.

  13. Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

    International Nuclear Information System (INIS)

    Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

    2005-01-01

    It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

  14. Anomalously high yield of doubly charged Si ions sputtered from cleaned Si surface by keV neutral Ar impact

    Energy Technology Data Exchange (ETDEWEB)

    Shinde, N.; Morita, K. E-mail: k-morita@mail.nucl.nagoya-u.ac.jp; Dhole, S.D.; Ishikawa, D

    2001-08-01

    The energy spectra of positively charged and neutral species ejected from the Si(1 1 1) surfaces by keV Ar impact have been measured by means of a combined technique of the time-of-flight (TOF) analysis with the multi-photon resonance ionization spectroscopy (MPRIS). It is shown that positively charged species of Si{sup +}, Si{sup 2+} and SiO{sup +} are ejected from the as-cleaned 7x7 surface by 11 keV Ar impact. It is also shown that Ar sputter cleaning of the as-cleaned 7x7 surface for 14 min at the flux of 2x10{sup 13}/cm{sup 2}s removes completely the oxygen impurity and the yields of Si{sup 2+} is comparable to that of Si{sup +}. Moreover, the ionization probability of Si atoms sputtered is shown to be expressed as an exponential function of the inverse of their velocity. The production mechanism for the doubly charged Si ion is discussed based on the L-shell ionization of Si atoms due to quasi-molecule formation in the collisions of the surface atoms with energetic recoils and subsequent Auger decay of the L-shell vacancy to doubly ionized Si ions.

  15. Large scale use of brazing and high temperature brazing for the fabrication of the 6.4 km long vacuum system of the HERA electron storage ring

    International Nuclear Information System (INIS)

    Ballion, R.; Boster, J.; Giesske, W.; Hartwig, H.; Jagnow, D.; Kouptsidis, J.; Pape, R.; Prohl, W.; Schumann, G.; Schwartz, M.; Iversen, K.; Mucklenbeck, J.

    1989-01-01

    The 6.4 km long vacuum system for electrons in the large storage ring HERA at Hamburg consists of about 1,400 components having lengths between .14 and 12 m. The vacuum components are mainly made from variously shaped tubes of the copper alloy CuSn2. This alloy combines sufficient mechanical strength with the high thermal conductivity needed to remove the 6 MW dissipated power of the synchrotron-light. The vacuum components consist additionally of parts made from stainless steel such as flanges, chambers for pumps, beam monitors, etc. All of these parts are connected in a vacuum tight manner and on a large scale by using brazing and high temperature brazing both in a vacuum or in a reducing gas atmosphere. (orig.)

  16. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Bakoglidis, Konstantinos D., E-mail: konba@ifm.liu.se; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

    2015-09-15

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN{sub x}) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN{sub x} films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N{sub 2}/Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V{sub s}, was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V{sub s} ≥ 60 V, V{sub s} ≥ 100 V, and V{sub s} = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V{sub s} for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V{sub s}, while CN{sub x} films deposited by MFMS showed residual stresses up to −4.2

  17. Low-temperature growth of low friction wear-resistant amorphous carbon nitride thin films by mid-frequency, high power impulse, and direct current magnetron sputtering

    International Nuclear Information System (INIS)

    Bakoglidis, Konstantinos D.; Schmidt, Susann; Garbrecht, Magnus; Ivanov, Ivan G.; Jensen, Jens; Greczynski, Grzegorz; Hultman, Lars

    2015-01-01

    The potential of different magnetron sputtering techniques for the synthesis of low friction and wear resistant amorphous carbon nitride (a-CN x ) thin films onto temperature-sensitive AISI52100 bearing steel, but also Si(001) substrates was studied. Hence, a substrate temperature of 150 °C was chosen for the film synthesis. The a-CN x films were deposited using mid-frequency magnetron sputtering (MFMS) with an MF bias voltage, high power impulse magnetron sputtering (HiPIMS) with a synchronized HiPIMS bias voltage, and direct current magnetron sputtering (DCMS) with a DC bias voltage. The films were deposited using a N 2 /Ar flow ratio of 0.16 at the total pressure of 400 mPa. The negative bias voltage, V s , was varied from 20 to 120 V in each of the three deposition modes. The microstructure of the films was characterized by high-resolution transmission electron microscopy and selected area electron diffraction, while the film morphology was investigated by scanning electron microscopy. All films possessed an amorphous microstructure, while the film morphology changed with the bias voltage. Layers grown applying the lowest substrate bias of 20 V exhibited pronounced intercolumnar porosity, independent of the sputter technique. Voids closed and dense films are formed at V s  ≥ 60 V, V s  ≥ 100 V, and V s  = 120 V for MFMS, DCMS, and HiPIMS, respectively. X-ray photoelectron spectroscopy revealed that the nitrogen-to-carbon ratio, N/C, of the films ranged between 0.2 and 0.24. Elastic recoil detection analysis showed that Ar content varied between 0 and 0.8 at. % and increased as a function of V s for all deposition techniques. All films exhibited compressive residual stress, σ, which depends on the growth method; HiPIMS produces the least stressed films with values ranging between −0.4 and −1.2 GPa for all V s , while CN x films deposited by MFMS showed residual stresses up to −4.2 GPa. Nanoindentation showed a significant

  18. Vacuum Technology

    Energy Technology Data Exchange (ETDEWEB)

    Biltoft, P J

    2004-10-15

    The environmental condition called vacuum is created any time the pressure of a gas is reduced compared to atmospheric pressure. On earth we typically create a vacuum by connecting a pump capable of moving gas to a relatively leak free vessel. Through operation of the gas pump the number of gas molecules per unit volume is decreased within the vessel. As soon as one creates a vacuum natural forces (in this case entropy) work to restore equilibrium pressure; the practical effect of this is that gas molecules attempt to enter the evacuated space by any means possible. It is useful to think of vacuum in terms of a gas at a pressure below atmospheric pressure. In even the best vacuum vessels ever created there are approximately 3,500,000 molecules of gas per cubic meter of volume remaining inside the vessel. The lowest pressure environment known is in interstellar space where there are approximately four molecules of gas per cubic meter. Researchers are currently developing vacuum technology components (pumps, gauges, valves, etc.) using micro electro mechanical systems (MEMS) technology. Miniature vacuum components and systems will open the possibility for significant savings in energy cost and will open the doors to advances in electronics, manufacturing and semiconductor fabrication. In conclusion, an understanding of the basic principles of vacuum technology as presented in this summary is essential for the successful execution of all projects that involve vacuum technology. Using the principles described above, a practitioner of vacuum technology can design a vacuum system that will achieve the project requirements.

  19. The source of X-rays and high-charged ions based on moderate power vacuum discharge with laser triggering

    Directory of Open Access Journals (Sweden)

    Alkhimova Mariya A.

    2015-06-01

    Full Text Available The source of X-ray radiation with the energy of quanta that may vary in the range hν = 1÷12 keV was developed for studies in X-ray interaction with matter and modification of solid surfaces. It was based on a vacuum spark discharge with the laser triggering. It was shown in our experiments that there is a possibility to adjust X-ray radiation spectrum by changing the configuration of the electrode system when the energy stored in the capacitor is varied within the range of 1÷17 J. A comprehensive study of X-ray imaging and quanta energy was carried out. These experiments were carried out for the case of both direct and reverse polarity of the voltage on the electrodes. Additionally, ion composition of plasma created in a laser-triggered vacuum discharge was analyzed. Highly charged ions Zn(+21, Cu(+20 and Fe(+18 were observed.

  20. Vacuum system problems of EBT: a steady-state fusion experiment

    International Nuclear Information System (INIS)

    Livesey, R.L.

    1981-01-01

    Many of the vacuum problems faced by EBT will soon be shared by other plasma devices as high-power microwave systems and long pulse lengths become more common. The solutions used on EBT (such as the raised lip with elastomer seal) are not unique; however, experience has shown that microwave-compatible designs must be carefully thought out. All details of the vacuum must be carefully thought out. All details of the vacuum must be carefully screened in advance to insure that microwaves do not leak into pumps or diagnostics where they can cause major damage. Sputter coating, which even now is noticeably present in most pulsed plasma systems, becomes much worse as systems approach steady state. And finally, radiation degradation of components which is presently a minor problem will become significant on high-power microwave-fed devices, such as EBT-P

  1. High power spectrometer for the characterization of photovoltaic cells in a controlled atmosphere or vacuum

    DEFF Research Database (Denmark)

    Krebs, Frederik C; Jørgensen, M.

    2003-01-01

    single monochromator grating. The photovoltaic sample under test is placed in a stainless-steel vacuum chamber allowing for operating pressures down to 10(-6) mbar equipped with a quartz window and electrical connections. The entire vacuum chamber was placed on a moving arm allowing for positioning...... in a selected part of the diffracted beam of the monochromator. The typical spectral resolution was 12 nm cm(-1) which gave bandwidths of 25 nm with a 2 cm sample width. The electrical characteristics of the photovoltaic device under test was measured using a source meter giving an experimental current...... sensitivity of 10 pA. We finally demonstrate the application of the instrumental setup for the characterization of a polymer based photovoltaic. (C) 2003 American Institute of Physics....

  2. Purification by high vacuum fusion and progressive solidification of uranium from electrolytic origin

    International Nuclear Information System (INIS)

    Poeydomenge, P.

    1964-01-01

    Within the general framework of research on uranium purification by zone melting, an attempt was made to determine the degree of purification which could be obtained by a simple gradual solidification of a normal nuclear-pure uranium paying close attention to the rate and direction of solidification. This uranium of intermediate purity would provide a starting material more suited to the first purification which is a vertical zone-melting process, so-called 'floating'. For this purpose, ingots of electrolytic uranium were melted under vacuum (2 to 5 x 10 -6 mm) in a long crucible after a slow rise in temperature to eliminate as much as possible the gases and volatiles impurities. This degassing and impurities volatilisation are completed by maintaining both at a high temperature for a considerable time. The beth is then made to solidify from the one an in the other the crucible by slowly moving the solid-liquid interface at a constant rate so as to obtain an impurity distribution according to the laws established by PFANN. Various experimental methods have made it possible to show that the metal which solidifies first is much purer than that at the other end of the ingot. The degree of purification of the metal at the beginning of the ingot has been evaluated either quantitatively by measuring the ratio of the electrical resistivities at room temperature and at the liquid nitrogen temperature, or qualitatively by an examination of the micrographic structure and by a study of the recrystallisation of the metal. On the one hand the purified metal re-crystallises during iso-chromic annealings carried out at increasing temperatures, at a temperature much lower than the initial metal or than the end of the ingot. The passage from the cold-worked state to the recrystallised state is followed by micro-hardness measurements. On the other end, only is the purified metal, strongly cold-worked by unidirectional melting, is the phenomenon of 'dissociative growth' of the grain

  3. Ultra high vacuum fracture and transfer device for AES analysis of irradiated austenitic stainless steel

    International Nuclear Information System (INIS)

    Urie, M.W.; Panayotou, N.F.; Robinson, J.E.

    1980-01-01

    An ultrahigh vacuum fracture and transfer device for analysis of irradiated and non-irradiated SS 316 fuel cladding is described. Mechanical property tests used to study the behavior of cladding during reactor transient over-power conditions are reported. The stress vs temperature curves show minimal differences between unirradiated cladding and unfueled cladding. The fueled cladding fails at a lower temperature. All fueled specimens failed in an intergranular mode

  4. Design and fabrication of a high vacuum box, to be used in one ion polarization system

    International Nuclear Information System (INIS)

    Ochoa Cano, J.M.A.

    1975-01-01

    The paper discusses in considerable detail some of the concepts associated with vacuum systems as well as some of the factors which enter into the design of components and units employed in such systems. One of the aims pursued is to establish national technology suited to designing and manufacturing needs arising in connection with problems like the one described, with training, as appropriate, for the personnel involved in the entire development process. (author)

  5. Cathode-constriction and column-constriction in high current vacuum arcs subjected to an axial magnetic field

    Science.gov (United States)

    Zhang, Zaiqin; Ma, Hui; Liu, Zhiyuan; Geng, Yingsan; Wang, Jianhua

    2018-04-01

    The influence of the applied axial magnetic field on the current density distribution in the arc column and electrodes is intensively studied. However, the previous results only provide a qualitative explanation, which cannot quantitatively explain a recent experimental data on anode current density. The objective of this paper is to quantitatively determine the current constriction subjected to an axial magnetic field in high-current vacuum arcs according to the recent experimental data. A magnetohydrodynamic model is adopted to describe the high current vacuum arcs. The vacuum arc is in a diffuse arc mode with an arc current ranged from 6 kArms to 14 kArms and an axial magnetic field ranged from 20 mT to 110 mT. By a comparison of the recent experimental work of current density distribution on the anode, the modelling results show that there are two types of current constriction. On one hand, the current on the cathode shows a constriction, and this constriction is termed as the cathode-constriction. On the other hand, the current constricts in the arc column region, and this constriction is termed as the column-constriction. The cathode boundary is of vital importance in a quantitative model. An improved cathode constriction boundary is proposed. Under the improved boundary, the simulation results are in good agreement with the recent experimental data on the anode current density distribution. It is demonstrated that the current density distribution at the anode is sensitive to that at the cathode, so that measurements of the anode current density can be used, in combination with the vacuum arc model, to infer the cathode current density distribution.

  6. Additive manufacturing of magnetic shielding and ultra-high vacuum flange for cold atom sensors.

    Science.gov (United States)

    Vovrosh, Jamie; Voulazeris, Georgios; Petrov, Plamen G; Zou, Ji; Gaber, Youssef; Benn, Laura; Woolger, David; Attallah, Moataz M; Boyer, Vincent; Bongs, Kai; Holynski, Michael

    2018-01-31

    Recent advances in the understanding and control of quantum technologies, such as those based on cold atoms, have resulted in devices with extraordinary metrological performance. To realise this potential outside of a lab environment the size, weight and power consumption need to be reduced. Here we demonstrate the use of laser powder bed fusion, an additive manufacturing technique, as a production technique relevant to the manufacture of quantum sensors. As a demonstration we have constructed two key components using additive manufacturing, namely magnetic shielding and vacuum chambers. The initial prototypes for magnetic shields show shielding factors within a factor of 3 of conventional approaches. The vacuum demonstrator device shows that 3D-printed titanium structures are suitable for use as vacuum chambers, with the test system reaching base pressures of 5 ± 0.5 × 10 -10 mbar. These demonstrations show considerable promise for the use of additive manufacturing for cold atom based quantum technologies, in future enabling improved integrated structures, allowing for the reduction in size, weight and assembly complexity.

  7. Electrospray deposition of fullerenes in ultra-high vacuum: in situ scanning tunneling microscopy and photoemission spectroscopy

    International Nuclear Information System (INIS)

    Satterley, Christopher J; Perdigao, LuIs M A; Saywell, Alex; Magnano, Graziano; Rienzo, Anna; Mayor, Louise C; Dhanak, Vinod R; Beton, Peter H; O'Shea, James N

    2007-01-01

    Electrospray deposition of fullerenes on gold has been successfully observed by in situ room temperature scanning tunneling microscopy and photoemission spectroscopy. Step-edge decoration and hexagonal close-packed islands with a periodicity of 1 nm are observed at low and multilayer coverages respectively, in agreement with thermal evaporation studies. Photoemission spectroscopy shows that fullerenes are being deposited in high purity and are coupling to the gold surface as for thermal evaporation. These results open a new route for the deposition of thermally labile molecules under ultra-high vacuum conditions for a range of high resolution surface science techniques

  8. Development of high-polarization Fe/Ge neutron polarizing supermirror: Possibility of fine-tuning of scattering length density in ion beam sputtering

    Science.gov (United States)

    Maruyama, R.; Yamazaki, D.; Akutsu, K.; Hanashima, T.; Miyata, N.; Aoki, H.; Takeda, M.; Soyama, K.

    2018-04-01

    The multilayer structure of Fe/Si and Fe/Ge systems fabricated by ion beam sputtering (IBS) was investigated using X-ray and polarized neutron reflectivity measurements and scanning transmission electron microscopy with energy-dispersive X-ray analysis. The obtained result revealed that the incorporation of sputtering gas particles (Ar) in the Ge layer gives rise to a marked reduction in the neutron scattering length density (SLD) and contributes to the SLD contrast between the Fe and Ge layers almost vanishing for spin-down neutrons. Bundesmann et al. (2015) have shown that the implantation of primary Ar ions backscattered at the target is responsible for the incorporation of Ar particles and that the fraction increases with increasing ion incidence angle and increasing polar emission angle. This leads to a possibility of fine-tuning of the SLD for the IBS, which is required to realize a high polarization efficiency of a neutron polarizing supermirror. Fe/Ge polarizing supermirror with m = 5 fabricated under the same condition showed a spin-up reflectivity of 0.70 at the critical momentum transfer. The polarization was higher than 0.985 for the qz range where the correction for the polarization inefficiencies of the beamline works properly. The result of the polarized neutron reflectivity measurement suggests that the "magnetically-dead" layers formed at both sides of the Fe layer, together with the SLD contrast, play a critical role in determining the polarization performance of a polarizing supermirror.

  9. Highly c-axis oriented ZnO:Ni thin film nanostructure by RF magnetron sputtering: Structural, morphological and magnetic studies

    International Nuclear Information System (INIS)

    Siddheswaran, R.; Savková, Jarmila; Medlín, Rostislav; Očenášek, Jan; Životský, Ondřej; Novák, Petr; Šutta, Pavol

    2014-01-01

    Highlights: • Highly preferred oriented columnar ZnO:Ni thin films were prepared by magnetron sputtering. • XRD and azimuthal studies explain the characteristics of orientation in [0 0 1] direction. • Surface morphology and grains distribution were explained by FE-SEM. • XTEM specimen prepared by ion slicing used for TEM microstructure analyses. • Tendency of ferromagnetism by influence of Ni content was studied by VSM. - Abstract: Nickel doped zinc oxide (ZnO:Ni) thin films with different Ni concentrations were deposited on silicon substrates at 400 °C by reactive magnetron sputtering using a mixture of Ar and O 2 gases. The X-ray diffraction and azimuthal patterns of the ZnO:Ni were carried out, and the quality of the strong preferred orientation of crystalline columns in the direction [0 0 1] perpendicular to the substrate surface were analysed. The grain size, distribution, and homogeneity of the thin film surfaces were studied by FE-SEM. The EDX and mapping confirmed that the Ni is incorporated into ZnO uniformly. The microstructure of the textured columns was analysed by TEM and HRTEM analyses. The average thickness and length of the columns were found to be about 50 nm and 600 nm, respectively. The rise of ferromagnetism by the influence of Ni content was studied by VSM magnetic studies at room temperature

  10. Improvement of the homogeneity of high mobility In{sub 2}O{sub 3}:H films by sputtering through a mesh electrode studied by Monte Carlo simulation and thin film analysis

    Energy Technology Data Exchange (ETDEWEB)

    Scherg-Kurmes, Harald; Hafez, Ahmad; Szyszka, Bernd [Technische Universitaet Berlin, Einsteinufer 25, 10587, Berlin (Germany); Siemers, Michael; Pflug, Andreas [Fraunhofer IST, Bienroder Weg 54E, 38108, Braunschweig (Germany); Schlatmann, Rutger [Helmholtz Zentrum Berlin, PVcomB, Schwarzschildstr. 3, 12489, Berlin (Germany); Rech, Bernd [Helmholtz Zentrum Berlin, Institute for Silicon Photovoltaics, Kekulestrasse 5, 12489, Berlin (Germany)

    2016-09-15

    Hydrogen-doped indium oxide (IOH) is a transparent conductive oxide offering great potential to optoelectronic applications because of its high mobility of over 100 cm{sup 2} V{sup -1}s{sup -1}. In films deposited statically by RF magnetron sputtering, a small area directly opposing the target center with a higher resistivity and lower crystallinity than the rest of the film has been found via hall- and XRD-measurements, which we attribute to plasma damage. In order to investigate the distribution of particle energies during the sputtering process we have simulated the RF-sputtering deposition process of IOH by particle-in-cell Monte Carlo (PICMC) simulation. At the surface of ceramic sputtering targets, negatively charged oxygen ions are created. These ions are accelerated toward the substrate in the plasma sheath with energies up to 150 eV. They damage the growing film and reduce its crystallinity. The influence of a negatively biased mesh inside the sputtering chamber on particle energies and distributions has been simulated and investigated. We found that the mesh decreased the high-energetic oxygen ion density at the substrate, thus enabling a more homogeneous IOH film growth. The theoretical results have been verified by XRD X-ray diffractometry (XRD), 4-point probe, and hall measurements of statically deposited IOH films on glass. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. Development of ion beam sputtering techniques for actinide target preparation

    International Nuclear Information System (INIS)

    Aaron, W.S.; Zevenbergen, L.A.; Adair, H.L.

    1985-01-01

    Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed. (orig.)

  12. Vacuum extraction

    DEFF Research Database (Denmark)

    Maagaard, Mathilde; Oestergaard, Jeanett; Johansen, Marianne

    2012-01-01

    Objectives. To develop and validate an Objective Structured Assessment of Technical Skills (OSATS) scale for vacuum extraction. Design. Two-part study design: Primarily, development of a procedure-specific checklist for vacuum extraction. Hereafter, validation of the developed OSATS scale for vac...

  13. Impact of pulse duration in high power impulse magnetron sputtering on the low-temperature growth of wurtzite phase (Ti,Al)N films with high hardness

    Energy Technology Data Exchange (ETDEWEB)

    Shimizu, Tetsuhide, E-mail: simizu-tetuhide@tmu.ac.jp [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan); Teranishi, Yoshikazu; Morikawa, Kazuo; Komiya, Hidetoshi; Watanabe, Tomotaro; Nagasaka, Hiroshi [Surface Finishing Technology Group, Tokyo Metropolitan Industrial Technology Research Institute, 2-4-10, Aomi, Kohtoh-ku, 135-0064 Tokyo (Japan); Yang, Ming [Division of Human Mechatronics Systems, Graduate School of System Design, Tokyo Metropolitan University, 6-6, Asahigaoka, Hino-shi, 191-0065 Tokyo (Japan)

    2015-04-30

    (Ti,Al)N films were deposited from a Ti{sub 0.33}Al{sub 0.67} alloy target with a high Al content at a substrate temperature of less than 150 °C using high power impulse magnetron sputtering (HIPIMS) plasma. The pulse duration was varied from 60 to 300 μs with a low frequency of 333 Hz to investigate the effects on the dynamic variation of the substrate temperature, microstructural grain growth and the resulting mechanical properties. The chemical composition, surface morphology and phase composition of the films were analyzed by energy dispersive spectroscopy, scanning electron microscopy and X-ray diffraction, respectively. Mechanical properties were additionally measured by using a nanoindentation tester. A shorter pulse duration resulted in a lower rate of increase in the substrate temperature with an exponentially higher peak target current. The obtained films had a high Al content of 70–73 at.% with a mixed highly (0002) textured wurtzite phase and a secondary phase of cubic (220) grains. Even with the wurtzite phase and the relatively high Al contents of more than 70 at.%, the films exhibited a high hardness of more than 30 GPa with a relatively smooth surface of less than 2 nm root-mean-square roughness. The hardest and smoothest surfaces were obtained for pulses with an intermediate duration of 150 μs. The differences between the obtained film properties under different pulse durations are discussed on the basis of the grain growth process observed by transmission electron microscopy. The feasibility of the low-temperature synthesis of AlN rich wurtzite phase (Ti,Al)N films with superior hardness by HIPIMS plasma duration was demonstrated. - Highlights: • Low temperature synthesis of AlN rich wurtzite phase (Ti,Al)N film was demonstrated. • 1 μm-thick TiAlN film was deposited under the temperature less than 150 °C by HIPIMS. • High Al content with highly (0002) textured wurtzite phase structure was obtained. • High hardness of 35 GPa were

  14. Observation of a periodic runaway in the reactive Ar/O2 high power impulse magnetron sputtering discharge

    Directory of Open Access Journals (Sweden)

    Seyedmohammad Shayestehaminzadeh

    2015-11-01

    Full Text Available This paper reports the observation of a periodic runaway of plasma to a higher density for the reactive discharge of the target material (Ti with moderate sputter yield. Variable emission of secondary electrons, for the alternating transition of the target from metal mode to oxide mode, is understood to be the main reason for the runaway occurring periodically. Increasing the pulsing frequency can bring the target back to a metal (or suboxide mode, and eliminate the periodic transition of the target. Therefore, a pulsing frequency interval is defined for the reactive Ar/O2 discharge in order to sustain the plasma in a runaway-free mode without exceeding the maximum power that the magnetron can tolerate.

  15. Investigation of optical and microstructural properties of RF magnetron sputtered PTFE films for hydrophobic applications

    International Nuclear Information System (INIS)

    Tripathi, S.; Haque, S. Maidul; Rao, K. Divakar; De, Rajnarayan; Shripathi, T.; Deshpande, U.; Ganesan, V.; Sahoo, N.K.

    2016-01-01

    Highlights: • Polytetrafluoroethylene films were made by RF sputtering by varying deposition time. • With increasing deposition time, thickness shows unusual trend due to backsputtering. • Major contribution of CF 2 and CF 3 bonds in the samples is seen by ATR-FTIR. • Deposition time influences film thickness but all samples remain hydrophobic. • XPS spectra show strong CF x bonds at the surface. - Abstract: The deposition time dependence of optical, structural and morphological properties of thin as well as ultrathin Polytetrafluoroethylene (PTFE) sputtered films have been explored in the present communication. The films were prepared by RF magnetron sputtering under high vacuum condition, as a function of deposition time. The ellipsometry as well as X-ray reflectivity data show a drastic reduction in film thickness as the deposition time increases from 5 s to 10 s, possibly as a consequence of back sputtering. With subsequent deposition, back sputtering component decreases and hence, thickness increases with increase in deposition time. Atomic force microscopy (AFM) images show a slight change in growth morphology although roughness is independent of deposition time. Attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) measurements showed the presence of C−C and CF x (x = 1–3) bonds in all the PTFE films. Supporting this, corresponding X-ray photoelectron spectroscopy (XPS) curves fitted for C-1s and F-1s peaks revealed a major contribution from CF 2 bonds along with significant contribution from CF 3 bonds leading to an F/C ratio of ∼1.5 giving hydrophobic nature of all the films.

  16. Multi-Scale-Porosity TiO2 scaffolds grown by innovative sputtering methods for high throughput hybrid photovoltaics

    Science.gov (United States)

    Sanzaro, Salvatore; Smecca, Emanuele; Mannino, Giovanni; Bongiorno, Corrado; Pellegrino, Giovanna; Neri, Fortunato; Malandrino, Graziella; Catalano, Maria Rita; Condorelli, Guglielmo Guido; Iacobellis, Rosabianca; De Marco, Luisa; Spinella, Corrado; La Magna, Antonino; Alberti, Alessandra

    2016-12-01

    We propose an up-scalable, reliable, contamination-free, rod-like TiO2 material grown by a new method based on sputtering deposition concepts which offers a multi-scale porosity, namely: an intra-rods nano-porosity (1-5 nm) arising from the Thornton’s conditions and an extra-rods meso-porosity (10-50 nm) originating from the spatial separation of the Titanium and Oxygen sources combined with a grazing Ti flux. The procedure is simple, since it does not require any template layer to trigger the nano-structuring, and versatile, since porosity and layer thickness can be easily tuned; it is empowered by the lack of contaminations/solvents and by the structural stability of the material (at least) up to 500 °C. Our material gains porosity, stability and infiltration capability superior if compared to conventionally sputtered TiO2 layers. Its competition level with chemically synthesized reference counterparts is doubly demonstrated: in Dye Sensitized Solar Cells, by the infiltration and chemisorption of N-719 dye (˜1 × 1020 molecules/cm3); and in Perovskite Solar Cells, by the capillary infiltration of solution processed CH3NH3PbI3 which allowed reaching efficiency of 11.7%. Based on the demonstrated attitude of the material to be functionalized, its surface activity could be differently tailored on other molecules or gas species or liquids to enlarge the range of application in different fields.

  17. A compact sub-Kelvin ultrahigh vacuum scanning tunneling microscope with high energy resolution and high stability.

    Science.gov (United States)

    Zhang, L; Miyamachi, T; Tomanić, T; Dehm, R; Wulfhekel, W

    2011-10-01

    We designed a scanning tunneling microscope working at sub-Kelvin temperatures in ultrahigh vacuum (UHV) in order to study the magnetic properties on the nanoscale. An entirely homebuilt three-stage cryostat is used to cool down the microscope head. The first stage is cooled with liquid nitrogen, the second stage with liquid (4)He. The third stage uses a closed-cycle Joule-Thomson refrigerator of a cooling power of 1 mW. A base temperature of 930 mK at the microscope head was achieved using expansion of (4)He, which can be reduced to ≈400 mK when using (3)He. The cryostat has a low liquid helium consumption of only 38 ml/h and standing times of up to 280 h. The fast cooling down of the samples (3 h) guarantees high sample throughput. Test experiments with a superconducting tip show a high energy resolution of 0.3 meV when performing scanning tunneling spectroscopy. The vertical stability of the tunnel junction is well below 1 pm (peak to peak) and the electric noise floor of tunneling current is about 6fA/√Hz. Atomic resolution with a tunneling current of 1 pA and 1 mV was achieved on Au(111). The lateral drift of the microscope at stable temperature is below 20 pm/h. A superconducting spilt-coil magnet allows to apply an out-of-plane magnetic field of up to 3 T at the sample surface. The flux vortices of a Nb(110) sample were clearly resolved in a map of differential conductance at 1.1 K and a magnetic field of 0.21 T. The setup is designed for in situ preparation of tip and samples under UHV condition.

  18. Low-temperature fabrication of sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors

    Science.gov (United States)

    Yao, Rihui; Zheng, Zeke; Xiong, Mei; Zhang, Xiaochen; Li, Xiaoqing; Ning, Honglong; Fang, Zhiqiang; Xie, Weiguang; Lu, Xubing; Peng, Junbiao

    2018-03-01

    In this work, low temperature fabrication of a sputtered high-k HfO2 gate dielectric for flexible a-IGZO thin film transistors (TFTs) on polyimide substrates was investigated. The effects of Ar-pressure during the sputtering process and then especially the post-annealing treatments at low temperature (≤200 °C) for HfO2 on reducing the density of defects in the bulk and on the surface were systematically studied. X-ray reflectivity, UV-vis and X-ray photoelectron spectroscopy, and micro-wave photoconductivity decay measurements were carried out and indicated that the high quality of optimized HfO2 film and its high dielectric properties contributed to the low concentration of structural defects and shallow localized defects such as oxygen vacancies. As a result, the well-structured HfO2 gate dielectric exhibited a high density of 9.7 g/cm3, a high dielectric constant of 28.5, a wide optical bandgap of 4.75 eV, and relatively low leakage current. The corresponding flexible a-IGZO TFT on polyimide exhibited an optimal device performance with a saturation mobility of 10.3 cm2 V-1 s-1, an Ion/Ioff ratio of 4.3 × 107, a SS value of 0.28 V dec-1, and a threshold voltage (Vth) of 1.1 V, as well as favorable stability under NBS/PBS gate bias and bending stress.

  19. Quantitative evaluation of high-energy O− ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

    International Nuclear Information System (INIS)

    Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

    2017-01-01

    O − ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O − energy distribution is measured with spatial dependence. Directional high-energy O − ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O − ion is measured. From absolute evaluation of the heat flux from O − ion, O − particle flux in order of 10 18 m −2 s −1 is evaluated at a distance of 10 cm from the target. Production yield of O − ion on the ITO target by one Ar + ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10 −3 as the minimum value. (paper)

  20. Quantitative evaluation of high-energy O- ion particle flux in a DC magnetron sputter plasma with an indium-tin-oxide target

    Science.gov (United States)

    Suyama, Taku; Bae, Hansin; Setaka, Kenta; Ogawa, Hayato; Fukuoka, Yushi; Suzuki, Haruka; Toyoda, Hirotaka

    2017-11-01

    O- ion flux from the indium tin oxide (ITO) sputter target under Ar ion bombardment is quantitatively evaluated using a calorimetry method. Using a mass spectrometer with an energy analyzer, O- energy distribution is measured with spatial dependence. Directional high-energy O- ion ejected from the target surface is observed. Using a calorimetry method, localized heat flux originated from high-energy O- ion is measured. From absolute evaluation of the heat flux from O- ion, O- particle flux in order of 1018 m-2 s-1 is evaluated at a distance of 10 cm from the target. Production yield of O- ion on the ITO target by one Ar+ ion impingement at a kinetic energy of 244 eV is estimated to be 3.3  ×  10-3 as the minimum value.

  1. Conceptual design and application studies of piezoelectric crystal motors under ultra-high vacuum conditions

    International Nuclear Information System (INIS)

    Nagler, Jens

    2009-08-01

    For the operation of accelerators it is important that motions in the vacuum occur. The here produced diploma thesis deals with the possibility to perform thes motions with piezocrystal motors in order to abandon wear-susceptible membrane bellows. For this studies have been performed, which should show for which it is useful to apply a piezocrystal motor. Limits are shown, advances and disadvantages are weighted in the thesis. Construction with with subsequent test of a tandem facility and an outlook on possible future concepts form the main content [de

  2. Ultra-high resistive and anisotropic CoPd–CaF{sub 2} nanogranular soft magnetic films prepared by tandem-sputtering deposition

    Energy Technology Data Exchange (ETDEWEB)

    Naoe, Masayuki, E-mail: naoe@denjiken.ne.jp [Research Institute for Electromagnetic Materials, 2-1-1 Yagiyama-Minami, Taihaku-ku, Sendai 982-0807 (Japan); Kobayashi, Nobukiyo [Research Institute for Electromagnetic Materials, 2-1-1 Yagiyama-Minami, Taihaku-ku, Sendai 982-0807 (Japan); Ohnuma, Shigehiro [Research Institute for Electromagnetic Materials, 2-1-1 Yagiyama-Minami, Taihaku-ku, Sendai 982-0807 (Japan); Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, 6-3 Aramaki-aza-Aoba, Aoba-ku, Sendai 980-8578 (Japan); Iwasa, Tadayoshi; Arai, Ken-Ichi [Research Institute for Electromagnetic Materials, 2-1-1 Yagiyama-Minami, Taihaku-ku, Sendai 982-0807 (Japan); Masumoto, Hiroshi [Frontier Research Institute for Interdisciplinary Sciences, Tohoku University, 6-3 Aramaki-aza-Aoba, Aoba-ku, Sendai 980-8578 (Japan)

    2015-10-01

    Ultra-high resistive and anisotropic soft magnetic films for gigahertz applications are desirable to demonstrate the really practical films. Here we present a study of novel nanogranular films fabricated by tandem-sputtering deposition. Their electromagnetic properties and nanostructure have also been discussed. These films consisted of nanocrystallized CoPd alloy-granules and CaF{sub 2} matrix, and a specimen having a composition of (Co{sub 0.69}Pd{sub 0.31}){sub 52}–(Ca{sub 0.31}F{sub 0.69}){sub 48} exhibited distinct in-plane uniaxial anisotropy after uniaxial field annealing with granule growth. Its complex permeability spectra have a ferromagnetic resonance frequency extending to the Super-High-Frequency band due to its higher anisotropy field, and its frequency response was quite well reproduced by a numerical calculation based on the Landau–Lifshitz–Gilbert equation. Furthermore, it was clarified that the CaF{sub 2}-based nanogranular film exhibits a hundredfold higher electrical resistivity than conventional oxide or nitride-based films. Higher resistivity enables the film thickness to achieve a margin exceeding threefold against eddy current loss. The greater resistivity of nanogranular films is attributed to the wide energy bandgap and superior crystallinity of CaF{sub 2} matrix. - Highlights: • We fabricated high-resistive and anisotropic granular films by tandem-sputtering. • CaF{sub 2}-based films exhibit a hundredfold higher resistivity than conventional films. • Uniaxial field annealing improved the magnetic properties dramatically. • High uniaxial anisotropy extended ferromagnetic resonance frequency to 4 GHz. • Annealed samples can be regarded as a ferromagnetic homogenized material.

  3. The statistics of sputtering

    International Nuclear Information System (INIS)

    Robinson, M.T.

    1993-01-01

    The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

  4. Production of ceramic-metal joints for high-vacuum applications and development of simulation program for discharge tube

    Energy Technology Data Exchange (ETDEWEB)

    Kang, S. H.; Chung, K. H. [Seoul National University, Seoul (Korea)

    2000-04-01

    To develop a ceramic-metal jointed tube for high-vacuum applications, metalizing process and active metal brazing were investigated. Active metal brazing was adopted as a joining process to produce a high-vacuum tube which had high joint strength and reliability. A possibility for the development of new composition of Mo-Mn paste was studied. Also, to improve the strength and reliability of active metal brazed joint, TiN coating was introduced as a diffusion barrier. It was revealed that TiN coating could improve the joint strength and reliability. 100mm {phi} tube joint was produced using incusil ABA brazing alloy. The strength and reliability of manufactured tube showed higher value than commercial one. The electric field distribution in ceramic tube under high voltage was analyzed. Two dimensional electric field distribution was investigated under the existence of charged particles. From this result, electric field distribution at the surface of ceramic tube and the location of high electric field was predicted. Finally, Arc discharge was simulated to analyze the effect of arc discharge on the discharge tube wall. The maximum temperature of arc was 12000-13000K. The wall temperature was increased 100-170K by the arc discharge. 45 refs., 57 figs., 4 tabs. (Author)

  5. A Large High Vacuum Reaction Chamber for Nuclear Physics Research at VECC, Kolkata

    International Nuclear Information System (INIS)

    Kundu, S; Bhattacharya, S; Meena, J K; Ghosh, T K; Bhattacharjee, T; Mukhopadhyay, P; Bhattacharya, C; Rana, T K; Banerjee, K; Mukherjee, G; Banerjee, S R; Bandyopadhyay, D L; Ahammed, M; Bhattacharya, P

    2012-01-01

    A large, segmented, horizontal axis, reaction chamber (SHARC) has recently been fabricated, installed and integrated with the beam line in the VECC superconducting cyclotron (SCC) experimental area. It is a cylindrical, three segment, stainless steel chamber of length 2.2 m, diameter 1 m. Two pairs of parallel rails have been provided internally for placement of the target assembly and detector systems within the chamber. The whole target assembly can be placed anywhere on the rail to facilitate optimum flight path. The nominal vacuum of ∼1×10 −7 mbar has been obtained in ∼8 hrs by means of two turbo molecular (1000 l/s) and two cryo pumps (2500 l/s) backed by mechanical pumps. The whole vacuum system as well as the target positioning (vertical and rotational movements) operations are fully automated with manual override option; both are monitored and controlled locally as well as remotely through the local and remote control units providing real time status display.

  6. Heavy particle transport in sputtering systems

    Science.gov (United States)

    Trieschmann, Jan

    2015-09-01

    This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

  7. Cosmic vacuum

    International Nuclear Information System (INIS)

    Chernin, Artur D

    2001-01-01

    Recent observational studies of distant supernovae have suggested the existence of cosmic vacuum whose energy density exceeds the total density of all the other energy components in the Universe. The vacuum produces the field of antigravity that causes the cosmological expansion to accelerate. It is this accelerated expansion that has been discovered in the observations. The discovery of cosmic vacuum radically changes our current understanding of the present state of the Universe. It also poses new challenges to both cosmology and fundamental physics. Why is the density of vacuum what it is? Why do the densities of the cosmic energy components differ in exact value but agree in order of magnitude? On the other hand, the discovery made at large cosmological distances of hundreds and thousands Mpc provides new insights into the dynamics of the nearby Universe, the motions of galaxies in the local volume of 10 - 20 Mpc where the cosmological expansion was originally discovered. (reviews of topical problems)

  8. Cosmic vacuum

    Energy Technology Data Exchange (ETDEWEB)

    Chernin, Artur D [P.K. Shternberg State Astronomical Institute at the M.V. Lomonosov Moscow State University, Moscow (Russian Federation)

    2001-11-30

    Recent observational studies of distant supernovae have suggested the existence of cosmic vacuum whose energy density exceeds the total density of all the other energy components in the Universe. The vacuum produces the field of antigravity that causes the cosmological expansion to accelerate. It is this accelerated expansion that has been discovered in the observations. The discovery of cosmic vacuum radically changes our current understanding of the present state of the Universe. It also poses new challenges to both cosmology and fundamental physics. Why is the density of vacuum what it is? Why do the densities of the cosmic energy components differ in exact value but agree in order of magnitude? On the other hand, the discovery made at large cosmological distances of hundreds and thousands Mpc provides new insights into the dynamics of the nearby Universe, the motions of galaxies in the local volume of 10 - 20 Mpc where the cosmological expansion was originally discovered. (reviews of topical problems)

  9. Highly c-axis-oriented monocrystalline Pb(Zr, Ti)O₃ thin films on si wafer prepared by fast cooling immediately after sputter deposition.

    Science.gov (United States)

    Yoshida, Shinya; Hanzawa, Hiroaki; Wasa, Kiyotaka; Esashi, Masayoshi; Tanaka, Shuji

    2014-09-01

    We successfully developed sputter deposition technology to obtain a highly c-axis-oriented monocrystalline Pb(Zr, Ti)O3 (PZT) thin film on a Si wafer by fast cooling (~-180°C/min) of the substrate after deposition. The c-axis orientation ratio of a fast-cooled film was about 90%, whereas that of a slow-cooled (~-40°C/min) film was only 10%. The c-axis-oriented monocrystalline Pb(Zr0.5, Ti0.5)O3 films showed reasonably large piezoelectric coefficients, e(31,f) = ~-11 C/m(2), with remarkably small dielectric constants, ϵ(r) = ~220. As a result, an excellent figure of merit (FOM) was obtained for piezoelectric microelectromechanical systems (MEMS) such as a piezoelectric gyroscope. This c-axis orientation technology on Si will extend industrial applications of PZT-based thin films and contribute further to the development of piezoelectric MEMS.

  10. Measurement of thermal conductivity of Bi2Te3 nanowire using high-vacuum scanning thermal wave microscopy

    Science.gov (United States)

    Park, Kyungbae; Hwang, Gwangseok; Kim, Hayeong; Kim, Jungwon; Kim, Woochul; Kim, Sungjin; Kwon, Ohmyoung

    2016-02-01

    With the increasing application of nanomaterials in the development of high-efficiency thermoelectric energy conversion materials and electronic devices, the measurement of the intrinsic thermal conductivity of nanomaterials in the form of nanowires and nanofilms has become very important. However, the current widely used methods for measuring thermal conductivity have difficulties in eliminating the influence of interfacial thermal resistance (ITR) during the measurement. In this study, by using high-vacuum scanning thermal wave microscopy (HV-STWM), we propose a quantitative method for measuring the thermal conductivity of nanomaterials. By measuring the local phase lag of high-frequency (>10 kHz) thermal waves passing through a nanomaterial in a high-vacuum environment, HV-STWM eliminates the measurement errors due to ITR and the distortion due to heat transfer through air. By using HV-STWM, we measure the thermal conductivity of a Bi2Te3 nanowire. Because HV-STWM is quantitatively accurate and its specimen preparation is easier than in the thermal bridge method, we believe that HV-STWM will be widely used for measuring the thermal properties of various types of nanomaterials.

  11. Study of cavity effect in micro-Pirani gauge chamber with improved sensitivity for high vacuum regime

    Directory of Open Access Journals (Sweden)

    Guohe Zhang

    2018-05-01

    Full Text Available Ultra-low pressure application of Pirani gauge needs significant improvement of sensitivity and expansion of measureable low pressure limit. However, the performance of Pirani gauge in high vacuum regime remains critical concerns since gaseous thermal conduction with high percentage is essential requirement. In this work, the heat transfer mechanism of micro-Pirani gauge packaged in a non-hermetic chamber was investigated and analyzed compared with the one before wafer-level packaging. The cavity effect, extremely important for the efficient detection of low pressure, was numerically and experimentally analyzed considering the influence of the pressure, the temperature and the effective heat transfer area in micro-Pirani gauge chamber. The thermal conduction model is validated by experiment data of MEMS Pirani gauges with and without capping. It is found that nature gaseous convection in chamber, determined by the Rayleigh number, should be taken into consideration. The experiment and model calculated results show that thermal resistance increases in the molecule regime, and further increases after capping due to the suppression of gaseous convection. The gaseous thermal conduction accounts for an increasing percentage of thermal conduction at low pressure while little changes at high pressure after capping because of the existence of cavity effect improving the sensitivity of cavity-effect-influenced Pirani gauge for high vacuum regime.

  12. Vacuum-induced Stark shifts for quantum logic using a collective system in a high-quality dispersive cavity

    International Nuclear Information System (INIS)

    Gabris, A.; Agarwal, G.S.

    2005-01-01

    A collective system of atoms in a high-quality cavity can be described by a nonlinear interaction which arises due to the Lamb shift of the energy levels due to the cavity vacuum [Agarwal et al., Phys. Rev. A 56, 2249 (1997)]. We show how this collective interaction can be used to perform quantum logic. In particular we produce schemes to realize controlled-NOT gates not only for two-qubit but also for three-qubit systems. We also discuss realizations of Toffoli gates. Our effective Hamiltonian is also realized in other systems such as trapped ions or magnetic molecules

  13. Characteristics of ZnO/diamond thin films prepared by RF magnetron sputtering

    CERN Document Server

    Park, Y W; Lee, J G; Baik, Y J; Kim, H J; Jung, H J; Choi, W K; Cho, B H; Park, C Y

    1999-01-01

    Due to its high Young's modulus, diamond has the highest acoustic wave velocity among all materials and is expected to be a candidate substrate for high-frequency surface acoustic wave(SAW) devices. In this study, the deposition of ZnO, as a piezoelectric layer, on a diamond substrate is investigated. ZnO has been fabricated by using RF magnetron sputtering with a ZnO target and various Ar/O sub 2 gas ratios, RF powers, and substrate temperatures at a vacuum of 10 sup - sup 5 Torr. The sputtered ZnO films are characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and I-V characteristics. All the films show only a (002) orientation. The atomic concentration of the sputtered ZnO films is changed by the oxygen gas ratio, and the ZnO films are grown with a homogeneous composition over their entire thickness. The electrical resistivity of the films varied from 4x10 sup 3 to 7x10 sup 8 OMEGA cm, depending on the Ar/O sub 2 gas ratio. The phase...

  14. High-induction nanocrystalline soft magnetic Fe{sub X}Ti{sub Y}B{sub Z} films prepared by magnetron sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Sheftel, Elena N.; Tedzhetov, Valentin A.; Harin, Eugene V.; Usmanova, Galina Sh. [A.A. Baikov Institute of Metallurgy and Material Science, Russian Academy of Sciences, Moscow (Russian Federation); Kiryukhantsev-Korneev, Filipp V. [National University of Science and Technology ' ' MISIS' ' , Moscow (Russian Federation)

    2016-12-15

    To design films with the Fe/TiB{sub 2} nanocomposite structure, which are characterized by high saturation induction B{sub s}, the phase and structural states and static magnetic properties of Fe-TiB{sub 2} films prepared by magnetron sputtering and subjected to subsequent annealing have been studied. According to X-ray diffraction data, either amorphous or nanocrystalline single-phase structure (an α-Fe(Ti,B) supersaturated solid solution with a bcc crystal lattice) is formed in the as-sputtered films. Depending on the film composition, the grain size of the α-Fe(Ti,B) phase varies from 45.6 to 6.5 nm; grains are characterized by high microstrain (0.21-4.96%). The annealing at 200-500 C leads to a decrease in the lattice parameter of the α-Fe(Ti,B) phase, i.e. to its depletion of titanium and boron and to the formation of two-phase α-Fe + Fe{sub 3}B structure after annealing at 500 C. The annealing at 200-500 C almost does not affect the grain size and microstrain of the bcc α-Fe-based phase. The amorphous state of the films is stable up to 500 C. All studied films are ferromagnets; the saturation induction B{sub s}(0.95-2.13 T) and coercive field H{sub c} (0.4-5 kA/m) of the films were determined. Correlations between the B{sub s} and H{sub c} magnitudes and the chemical composition of the films, their phase and structural states and magnetic structure are discussed. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

    Science.gov (United States)

    Barghouty, Abdulmasser F.; Adams, James H., Jr.

    2008-01-01

    At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

  16. Vacuum brazing of high volume fraction SiC particles reinforced aluminum matrix composites

    Science.gov (United States)

    Cheng, Dongfeng; Niu, Jitai; Gao, Zeng; Wang, Peng

    2015-03-01

    This experiment chooses A356 aluminum matrix composites containing 55% SiC particle reinforcing phase as the parent metal and Al-Si-Cu-Zn-Ni alloy metal as the filler metal. The brazing process is carried out in vacuum brazing furnace at the temperature of 550°C and 560°C for 3 min, respectively. The interfacial microstructures and fracture surfaces are investigated by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy spectrum analysis (EDS). The result shows that adequacy of element diffusion are superior when brazing at 560°C, because of higher activity and liquidity. Dislocations and twins are observed at the interface between filler and composite due to the different expansion coefficient of the aluminum alloy matrix and SiC particles. The fracture analysis shows that the brittle fracture mainly located at interface of filler and composites.

  17. A versatile ultra high vacuum sample stage with six degrees of freedom

    Energy Technology Data Exchange (ETDEWEB)

    Ellis, A. W.; Tromp, R. M. [IBM T.J. Watson Research Center, 1101 Kitchawan Road, P.O. Box 218, Yorktown Heights, New York 10598 (United States)

    2013-07-15

    We describe the design and practical realization of a versatile sample stage with six degrees of freedom. The stage was designed for use in a Low Energy Electron Microscope, but its basic design features will be useful for numerous other applications. The degrees of freedom are X, Y, and Z, two tilts, and azimuth. All motions are actuated in an ultrahigh vacuum base pressure environment by piezoelectric transducers with integrated position sensors. The sample can be load-locked. During observation, the sample is held at a potential of −15 kV, at temperatures between room temperature and 1500 °C, and in background gas pressures up to 1 × 10{sup −4} Torr.

  18. Magnetic insulation of high voltages in vacuum: comparison of experiment with simulations

    International Nuclear Information System (INIS)

    Bergeron, K.D.; Poukey, J.W.; Di Capua, M.S.; Pellinen, D.G.

    1978-01-01

    Experiments on long magnetically insulated vacuum transmission lines at the 700 kV/cm level have been analyzed by comparing with computer simulations. The particle-in-cell code used is 2-D, time-dependent and, like the experiments, coaxial cylindrical. Comparison could be made with current monitors at three intermediate longitudinal positions at both the outer electrode (for total current) and the inner electrode (for boundary current). The overall agreement was quite good, though the measured boundary current was consistently about 22 percent lower than the simulation values. In addition, a detailed comparison of the radial variation of several time-averaged quantities from the simulation was made with the predictions of the parapotential theory. It was found that the electric potential was very similar in the two cases, but the charge and current densities were not

  19. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

    KAUST Repository

    Yonkee, Benjamin P.; Young, Erin; DenBaars, Steven P; Speck, James S; Nakamura, Shuji

    2017-01-01

    Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

  20. High intensity vacuum ultraviolet and extreme ultraviolet production by noncollinear mixing in laser vaporized media

    Energy Technology Data Exchange (ETDEWEB)

    Todt, Michael A.; Albert, Daniel R.; Davis, H. Floyd, E-mail: hfd1@cornell.edu [Baker Laboratory, Department of Chemistry and Chemical Biology, Cornell University, Ithaca, New York 14853-1301 (United States)

    2016-06-15

    A method is described for generating intense pulsed vacuum ultraviolet (VUV) and extreme ultraviolet (XUV) laser radiation by resonance enhanced four-wave mixing of commercial pulsed nanosecond lasers in laser vaporized mercury under windowless conditions. By employing noncollinear mixing of the input beams, the need of dispersive elements such as gratings for separating the VUV/XUV from the residual UV and visible beams is eliminated. A number of schemes are described, facilitating access to the 9.9–14.6 eV range. A simple and convenient scheme for generating wavelengths of 125 nm, 112 nm, and 104 nm (10 eV, 11 eV, and 12 eV) using two dye lasers without the need for dye changes is described.

  1. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

    KAUST Repository

    Yonkee, Benjamin P.

    2017-10-31

    Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

  2. Design and analysis of high current DC power supply for vacuum arc melting furnace

    International Nuclear Information System (INIS)

    Adhikary, Santu; Sharma, Vishnu Kumar; Sharma, Archana

    2015-01-01

    Vacuum Arc furnace (VAR), is used for melting of ingot in many industrial units. Till now in many industries the existing power supply for VAR is based on magnetic amplifier, which is a lossy component. Thus an efficient topology is needed to develop as a suitable alternative for the existing power supply. Basically Arc in electrical furnace is an unstable phenomena, it has drooping characteristic in nature so to stabilize the arc we need a power supply across the load (arc), which is more drooping in nature than arc characteristics. So this paper highlights the stability and response analysis of several alternative topologies and Stabilization of arc using the feedback and firing angle control in MATLAB. The work also covers comparison among those topologies to choose the optimized topology as a suitable alternative of the existing magnetic amplifier based power supply and the detail design of the proposed topology with a tested trail circuit in PROTEUS. (author)

  3. The use of high vacuum soil vapor extraction to improve contaminant recovery from ground water zones of low transmissivity

    International Nuclear Information System (INIS)

    Brown, A.; Farrow, J.R.C.; Burgess, W.

    1996-01-01

    This study examines the potential for enhancing hydrocarbon contaminant mass recovery from ground water using high vacuum soil vapor extraction (SVE). The effectiveness of this form of remediation is compared with the effectiveness of conventional pump-and-treat. This study focuses on the performance of a high vacuum SVE system at two ground water monitoring wells (MW-17 and MW-65b) at a site in Santa Barbara, California, US. The site is a highly characterized site with vadose zone and ground water petroleum hydrocarbon contamination (gasoline). The ground water wells are located beyond a defined area of vadose zone soil contamination. Ground water hydrocarbon contamination [light non-aqueous phase liquid (LNAPL) and dissolved phase] is present at each of the wells. the ground water wells have been part of a low-flow, pump-and-treat, ground water treatment system (GWTS) since August, 1986. The low transmissivity of the aquifer sediments prevent flow rates above approximately 0.02 gpm (0.01 l/min) per well

  4. In situ preparation of biomimetic thin films and their surface-shielding effect for organisms in high vacuum.

    Directory of Open Access Journals (Sweden)

    Hiroshi Suzuki

    Full Text Available Self-standing biocompatible films have yet to be prepared by physical or chemical vapor deposition assisted by plasma polymerization because gaseous monomers have thus far been used to create only polymer membranes. Using a nongaseous monomer, we previously found a simple fabrication method for a free-standing thin film prepared from solution by plasma polymerization, and a nano-suit made by polyoxyethylene (20 sorbitan monolaurate can render multicellular organisms highly tolerant to high vacuum. Here we report thin films prepared by plasma polymerization from various monomer solutions. The films had a flat surface at the irradiated site and were similar to films produced by vapor deposition of gaseous monomers. However, they also exhibited unique characteristics, such as a pinhole-free surface, transparency, solvent stability, flexibility, and a unique out-of-plane molecular density gradient from the irradiated to the unirradiated surface of the film. Additionally, covering mosquito larvae with the films protected the shape of the organism and kept them alive under the high vacuum conditions in a field emission-scanning electron microscope. Our method will be useful for numerous applications, particularly in the biological sciences.

  5. Numerical analysis of high-speed Lithium jet flow under vacuum conditions

    International Nuclear Information System (INIS)

    Gordeev, Sergej; Groeschel, Friedrich; Stieglitz, Robert

    2016-01-01

    The EVEDA Li test loop (ELTL) [1] is aimed at validating the hydraulic stability of the Lithium (Li) target at a velocity up to 20 m/s at vacuum (≈10 −3 Pa). The ELTL has been designed to demonstrate the feasibility of the major components providing a neutron production liquid Li target for IFMIF. The rectangular shaped Li jet (cross-section 25 mm × 100 mm) necessitates for heat removal flow velocities of 15–20 m/s along a concave shaped back wall (curvature radius 250 mm) towards the outlet pipe, where the Li jet is subjected to vacuum before it finally enters the collecting quench tank. During the validation experiments within the ELTL acoustic waves within the target outlet pipe have been recorded, indicating potential cavitation processes in the jet impinging region, which may cause premature failures. In order to identify potential cavitation phenomena in correlation with the free jet flow in the outlet pipe a numerical study has been performed. The comparison measured and simulated acoustic emissions exhibits that experimentally deduced cavitation area coincides with the location of the jet wall impingement. The simulations further reveal that a part of the fluid after striking the wall even flows opposite to the gravity vector. This reversed flow is inherently unstable and characterized by waves at first growing and then bursting into droplets. The intense generation of small droplets increases significantly the Li free surface area and lead to a production of Li vapour, which is captured by the jet flow and reintroduced in the main flow. As the static pressure is recovered downstream due to jet impact, the vapour bubbles collapse and hence cavitation likely occurs.

  6. Improved design of a high-voltage vacuum-insulator interface

    Directory of Open Access Journals (Sweden)

    W. A. Stygar

    2005-05-01

    Full Text Available We have conducted a series of experiments designed to measure the flashover strength of various azimuthally symmetric 45° vacuum-insulator configurations. The principal objective of the experiments was to identify a configuration with a flashover strength greater than that of the standard design, which consists of a 45° polymethyl-methacrylate (PMMA insulator between flat electrodes. The thickness d and circumference C of the insulators tested were held constant at 4.318 and 95.74 cm, respectively. The peak voltage applied to the insulators ranged from 0.8 to 2.2 MV. The rise time of the voltage pulse was 40–60 ns; the effective pulse width [as defined in Phys. Rev. ST Accel. Beams 7, 070401 (2004PRABFM1098-440210.1103/PhysRevSTAB.7.070401] was on the order of 10 ns. Experiments conducted with flat aluminum electrodes demonstrate that the flashover strength of a crosslinked polystyrene (Rexolite insulator is (18±7% higher than that of PMMA. Experiments conducted with a Rexolite insulator and an anode plug, i.e., an extension of the anode into the insulator, demonstrate that a plug can increase the flashover strength by an additional (44±11%. The results are consistent with the Anderson model of anode-initiated flashover, and confirm previous measurements. It appears that a Rexolite insulator with an anode plug can, in principle, increase the peak electromagnetic power that can be transmitted across a vacuum interface by a factor of [(1.18(1.44]^{2}=2.9 over that which can be achieved with the standard design.

  7. Numerical analysis of high-speed Lithium jet flow under vacuum conditions

    Energy Technology Data Exchange (ETDEWEB)

    Gordeev, Sergej, E-mail: sergej.gordeev@kit.edu; Groeschel, Friedrich; Stieglitz, Robert

    2016-11-01

    The EVEDA Li test loop (ELTL) [1] is aimed at validating the hydraulic stability of the Lithium (Li) target at a velocity up to 20 m/s at vacuum (≈10{sup −3} Pa). The ELTL has been designed to demonstrate the feasibility of the major components providing a neutron production liquid Li target for IFMIF. The rectangular shaped Li jet (cross-section 25 mm × 100 mm) necessitates for heat removal flow velocities of 15–20 m/s along a concave shaped back wall (curvature radius 250 mm) towards the outlet pipe, where the Li jet is subjected to vacuum before it finally enters the collecting quench tank. During the validation experiments within the ELTL acoustic waves within the target outlet pipe have been recorded, indicating potential cavitation processes in the jet impinging region, which may cause premature failures. In order to identify potential cavitation phenomena in correlation with the free jet flow in the outlet pipe a numerical study has been performed. The comparison measured and simulated acoustic emissions exhibits that experimentally deduced cavitation area coincides with the location of the jet wall impingement. The simulations further reveal that a part of the fluid after striking the wall even flows opposite to the gravity vector. This reversed flow is inherently unstable and characterized by waves at first growing and then bursting into droplets. The intense generation of small droplets increases significantly the Li free surface area and lead to a production of Li vapour, which is captured by the jet flow and reintroduced in the main flow. As the static pressure is recovered downstream due to jet impact, the vapour bubbles collapse and hence cavitation likely occurs.

  8. Fundamental aspects of cathodic sputtering

    International Nuclear Information System (INIS)

    Harman, R.

    1979-01-01

    The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

  9. Sputtering materials for VLSI and thin film devices

    CERN Document Server

    Sarkar, Jaydeep

    2010-01-01

    An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

  10. Simple catalytic cell for restoring He leak detector sensitivity on vacuum systems with high D2 backgrounds

    International Nuclear Information System (INIS)

    Busath, J.; Chiu, H.K.

    1998-12-01

    The DIII-D National Fusion Facility at General Atomics focuses on plasma physics and fusion energy science. The DIII-D tokamak is a 35 m 3 toroidal vacuum vessel with over 200 ports for diagnostic instrumentation, cryogenics, microwave heating, and four large neutral beam injectors. Maintaining vacuum in the 10 -8 Torr range is crucial for producing high performance plasma discharges. He leak checking the DIII-D tokamak and the neutral beamlines has historically been difficult. D 2 is used as the fuel gas in most plasma discharges and neutral beams. After plasma operations, D 2 out-gassing from the torus walls and internal beamline components can exceed 10 -4 std cc/s. The mass of the D 2 molecule (4.028 u) is indistinguishable from that of the He atom (4.003 u) to a standard mass spectrometer leak detector. High levels of D 2 reduce leak detector sensitivity and effectively mask the He trace gas signal rendering normal leak checking techniques ineffective. A simple apparatus was developed at GA to address these problems. It consists of a palladium based catalyst cell and associated valves and piping placed in series with the leak detector. This reduces the D 2 throughput by a factor greater than 10,000, restoring leak detector sensitivity. This paper will briefly discuss the development of the cell, the physical processes involved, the tests performed to quantify and optimize the processes, and the operational results at DIII-D

  11. Test of the beam effect on vacuum arc occurrence in a high-gradient accelerating structure for the CLIC project

    CERN Document Server

    AUTHOR|(CDS)2130409; Gagliardi, Martino

    A new generation of lepton colliders capable of reaching TeV energies is pres- ently under development, and to succeed in this task it is necessary to show that the technology for such a machine is available. The Compact Linear Collider (CLIC) is a possible design option among the future lepton collider projects. It consists of two normal-conducting linacs. Accelerating structures with a gradient of the order of 100 MV/m are necessary to reach the required high energies within a reasonable machine length. One of the strictest require- ments for such accelerating structures is a relatively low occurrence of vacuum arcs. CLIC prototype structures have been tested in the past, but only in absence of beam. In order to proof the feasibility of the high gradient technology for building a functional collider, it is necessary to understand the effect of the beam presence on the vacuum breakdowns. Tests of this type have never been performed previously. The main goal of this work is to provide a first measurement of t...

  12. Highly stable hydrogenated gallium-doped zinc oxide thin films grown by DC magnetron sputtering using H2/Ar gas

    International Nuclear Information System (INIS)

    Takeda, Satoshi; Fukawa, Makoto

    2004-01-01

    The effects of water partial pressure (P H 2 O ) on electrical and optical properties of Ga-doped ZnO films grown by DC magnetron sputtering were investigated. With increasing P H 2 O , the resistivity (ρ) of the films grown in pure Ar gas (Ar-films) significantly increased due to the decrease in both free carrier density and Hall mobility. The transmittance in the wavelength region of 300-400 nm for the films also increased with increasing P H 2 O . However, no significant P H 2 O dependence of the electrical and optical properties was observed for the films grown in H 2 /Ar gas mixture (H 2 /Ar-films). Secondary ion mass spectrometry (SIMS) and X-ray diffraction (XRD) analysis revealed that hydrogen concentration in the Ar-films increased with increasing P H 2 O and grain size of the films decreases with increasing the hydrogen concentration. These results indicate that the origin of the incorporated hydrogen is attributed to the residual water vapor in the coating chamber, and that the variation of ρ and transmittance along with P H 2 O of the films resulted from the change in the grain size. On the contrary, the hydrogen concentration in H 2 /Ar-films was almost constant irrespective of P H 2 O and the degree of change in the grain size of the films versus P H 2 O was much smaller than that of Ar-films. These facts indicate that the hydrogen primarily comes from H 2 gas and the adsorption species due to H 2 gas preferentially adsorb to the growing film surface over residual water vapor. Consequently, the effects of P H 2 O on the crystal growth are reduced

  13. Tetrasilane and digermane for the ultra-high vacuum chemical vapor deposition of SiGe alloys

    International Nuclear Information System (INIS)

    Hart, John; Hazbun, Ramsey; Eldridge, David; Hickey, Ryan; Fernando, Nalin; Adam, Thomas; Zollner, Stefan; Kolodzey, James

    2016-01-01

    Tetrasilane and digermane were used to grow epitaxial silicon germanium layers on silicon substrates in a commercial ultra-high vacuum chemical vapor deposition tool. Films with concentrations up to 19% germanium were grown at temperatures from 400 °C to 550 °C. For all alloy compositions, the growth rates were much higher compared to using mono-silane and mono-germane. The quality of the material was assessed using X-ray diffraction, atomic force microscopy, and spectroscopic ellipsometry; all indicating high quality epitaxial films with low surface roughness suitable for commercial applications. Studies of the decomposition kinetics with regard to temperature were performed, revealing an unusual growth rate maximum between the high and low temperature deposition regimes. - Highlights: • Higher order precursors tetrasilane and digermane • Low temperature deposition • Thorough film characterization with temperature • Arrhenius growth rate peak

  14. Implantation, recoil implantation, and sputtering

    International Nuclear Information System (INIS)

    Kelly, R.

    1984-01-01

    The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

  15. Electron stimulated carbon adsorption in ultra high vacuum monitored by Auger Electron Spectroscopy (AES)

    CERN Document Server

    Scheuerlein, C

    2001-01-01

    Electron stimulated carbon adsorption at room temperature (RT) has been studied in the context of radiation induced surface modifications in the vacuum system of particle accelerators. The stimulated carbon adsorption was monitored by AES during continuous irradiation by 2.5 keV electrons and simultaneous exposure of the sample surface to CO, CO2 or CH4. The amount of adsorbed carbon was estimated by measuring the carbon Auger peak intensity as a function of the electron irradiation time. Investigated substrate materials are technical OFE copper and TiZrV non-evaporable getter (NEG) thin film coatings, which are saturated either in air or by CO exposure inside the Auger electron spectrometer. On the copper substrate electron induced carbon adsorption from gas phase CO and CO2 is below the detection limit of AES. During electron irradiation of the non-activated TiZrV getter thin films, electron stimulated carbon adsorption from gas phase molecules is detected when either CO or CO2 is injected, whereas the CH4 ...

  16. Multifunctional ultra-high vacuum apparatus for studies of the interactions of chemical warfare agents on complex surfaces

    International Nuclear Information System (INIS)

    Wilmsmeyer, Amanda R.; Morris, John R.; Gordon, Wesley O.; Mantooth, Brent A.; Lalain, Teri A.; Davis, Erin Durke

    2014-01-01

    A fundamental understanding of the surface chemistry of chemical warfare agents is needed to fully predict the interaction of these toxic molecules with militarily relevant materials, catalysts, and environmental surfaces. For example, rules for predicting the surface chemistry of agents can be applied to the creation of next generation decontaminants, reactive coatings, and protective materials for the warfighter. Here, we describe a multifunctional ultra-high vacuum instrument for conducting comprehensive studies of the adsorption, desorption, and surface chemistry of chemical warfare agents on model and militarily relevant surfaces. The system applies reflection-absorption infrared spectroscopy, x-ray photoelectron spectroscopy, and mass spectrometry to study adsorption and surface reactions of chemical warfare agents. Several novel components have been developed to address the unique safety and sample exposure challenges that accompany the research of these toxic, often very low vapor pressure, compounds. While results of vacuum-based surface science techniques may not necessarily translate directly to environmental processes, learning about the fundamental chemistry will begin to inform scientists about the critical aspects that impact real-world applications

  17. Multifunctional ultra-high vacuum apparatus for studies of the interactions of chemical warfare agents on complex surfaces.

    Science.gov (United States)

    Wilmsmeyer, Amanda R; Gordon, Wesley O; Davis, Erin Durke; Mantooth, Brent A; Lalain, Teri A; Morris, John R

    2014-01-01

    A fundamental understanding of the surface chemistry of chemical warfare agents is needed to fully predict the interaction of these toxic molecules with militarily relevant materials, catalysts, and environmental surfaces. For example, rules for predicting the surface chemistry of agents can be applied to the creation of next generation decontaminants, reactive coatings, and protective materials for the warfighter. Here, we describe a multifunctional ultra-high vacuum instrument for conducting comprehensive studies of the adsorption, desorption, and surface chemistry of chemical warfare agents on model and militarily relevant surfaces. The system applies reflection-absorption infrared spectroscopy, x-ray photoelectron spectroscopy, and mass spectrometry to study adsorption and surface reactions of chemical warfare agents. Several novel components have been developed to address the unique safety and sample exposure challenges that accompany the research of these toxic, often very low vapor pressure, compounds. While results of vacuum-based surface science techniques may not necessarily translate directly to environmental processes, learning about the fundamental chemistry will begin to inform scientists about the critical aspects that impact real-world applications.

  18. Multifunctional ultra-high vacuum apparatus for studies of the interactions of chemical warfare agents on complex surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wilmsmeyer, Amanda R.; Morris, John R. [Department of Chemistry, Virginia Tech, Blacksburg, Virginia 24061 (United States); Gordon, Wesley O.; Mantooth, Brent A.; Lalain, Teri A. [Research and Technology Directorate, U.S. Army Edgewood Chemical Biological Center, Aberdeen Proving Ground, Maryland 21010 (United States); Davis, Erin Durke [OptiMetrics, Inc., Abingdon, Maryland 21009 (United States)

    2014-01-15

    A fundamental understanding of the surface chemistry of chemical warfare agents is needed to fully predict the interaction of these toxic molecules with militarily relevant materials, catalysts, and environmental surfaces. For example, rules for predicting the surface chemistry of agents can be applied to the creation of next generation decontaminants, reactive coatings, and protective materials for the warfighter. Here, we describe a multifunctional ultra-high vacuum instrument for conducting comprehensive studies of the adsorption, desorption, and surface chemistry of chemical warfare agents on model and militarily relevant surfaces. The system applies reflection-absorption infrared spectroscopy, x-ray photoelectron spectroscopy, and mass spectrometry to study adsorption and surface reactions of chemical warfare agents. Several novel components have been developed to address the unique safety and sample exposure challenges that accompany the research of these toxic, often very low vapor pressure, compounds. While results of vacuum-based surface science techniques may not necessarily translate directly to environmental processes, learning about the fundamental chemistry will begin to inform scientists about the critical aspects that impact real-world applications.

  19. arXiv Analytical methods for vacuum simulations in high energy accelerators for future machines based on LHC performances

    CERN Document Server

    Aichinger, Ida; Chiggiato, Paolo

    The Future Circular Collider (FCC), currently in the design phase, will address many outstanding questions in particle physics. The technology to succeed in this 100 km circumference collider goes beyond present limits. Ultra-high vacuum conditions in the beam pipe is one essential requirement to provide a smooth operation. Different physics phenomena as photon-, ion- and electron- induced desorption and thermal outgassing of the chamber walls challenge this requirement. This paper presents an analytical model and a computer code PyVASCO that supports the design of a stable vacuum system by providing an overview of all the gas dynamics happening inside the beam pipes. A mass balance equation system describes the density distribution of the four dominating gas species $\\text{H}_2, \\text{CH}_4$, $\\text{CO}$ and $\\text{CO}_2$. An appropriate solving algorithm is discussed in detail and a validation of the model including a comparison of the output to the readings of LHC gauges is presented. This enables the eval...

  20. Grain size stabilization of tetragonal phase of zirconia in sputtered Zr-O cermet films

    International Nuclear Information System (INIS)

    Hadavi, M. S.; Keshmiri, H.; Kompany, A.; Zhang, Q. C.

    2005-01-01

    In this research, thin films of Zr/ZrO 2 composites were deposited by reactive magnetron sputtering technique on Si and fused Silica substrates, and their structures were investigated by x-ray diffraction method. During the deposition of the cermet layers, a Zr metallic target was sputtered in a gas mixture of Ar and O 2 . By controlling of O 2 flow rate, the different metal volume fractions in the cermet layers were achieved. The optical response of the samples was studied using spectroscopy methods. Also the effect of vacuum annealing on the structures and the optical properties were studies. x-ray diffraction results indicated that the prepared samples were amorphous and vacuum annealing induced crystallization in the cermet films. This research also show that without doping, the tetragonal phase of Zirconia can be stabilized at a temperature lower than the normal transition temperature. This is g rain size stabilization a nd relates to the small size of the crystallizes. In order to study the electron diffraction in the selected area patterns, the samples were analysed by a high-resolution transmission microscope. The selected area patterns results showed that all of the as prepared samples were amorphous showing evidence of very small Zr crystallites immersed in a dielectric medium. The Sad results are in close agreement with those obtained by x-ray diffraction analysis