Laser sputtering. Pt. 1

International Nuclear Information System (INIS)

Kelly, R.; Cuomo, J.J.; Leary, P.A.; Rothenburg, J.E.; Braren, B.E.; Aliotta, C.F.

1985-01-01

Irradiation, i.e. bombardment, with 193 nm laser pulses having an energy fluence of 2.5 J/cm 2 and a duration of proportional12 ns leads to rapid sputtering with Au, Al 2 O 3 , MgO, MgO.Al 2 O 3 , SiO 2 , glass, and LaB 6 , relatively slow sputtering with MgF 2 and diamond, and mainly thermal-stress cracking with W. Scanning electron microscopy (SEM) suggests that the mechanism for the sputtering of Au in either vacuum or air is one based on the hydrodynamics of molten Au, while an SEM-derived surface temperature estimate confirms that thermal sputtering (which might have been expected) is not possible. SEM with W shows that the near total lack of material removal is due to the thermal-stress cracking not leading to completed exfoliation, together with the surface temperature being too low for either hydrodynamical or thermal processes. Corresponding SEM with Al 2 O 3 shows, in the case of specimens bombarded in vacuum, topography of such a type that all mechanisms except electronic ones can be ruled out. The topography of Al 2 O 3 or other oxides bombarded in air through a mask is somewhat different, showing craters as for vacuum bombardments but ones which have a cone-like pattern on the bottom. (orig.)

Advanced capabilities and applications of a sputter-RBS system

International Nuclear Information System (INIS)

Brijs, B.; Deleu, J.; Beyer, G.; Vandervorst, W.

1999-01-01

In previous experiments, sputter-RBS 1 has proven to be an ideal tool to study the interaction of low energy ions. This contribution employs the same methodology to identify surface contamination induced during sputtering and to the determine absolute sputter yields. In the first experiment ERDA analysis was used to study the evolution of Hydrogen contamination during sputter-RBS experiments. Since the determination of Hydrogen concentration in very thin near surface layers is frequently limited by the presence of a strong surface peak of Hydrogen originating from adsorbed contamination of the residual vacuum, removal of this contamination would increase the sensitivity for Hydrogen detection in the near sub surface drastically. Therefore low energy (12 keV) Argon sputtering was used to remove the Hydrogen surface peak. However enhanced Hydrogen adsorption was observed related to the Ar dose. This experiment shows that severe vacuum conditions and the use of high current densities/sputter yields are a prerequisite for an efficient detection of Hydrogen in the near surface layers. In the second experiment, an attempt was made to determine the sputter yield of Cu during low energy (12 keV) Oxygen bombardment. In order to determine the accumulated dose of the low energy ion beam, a separate Faraday cup in combination with a remote controlled current have been added to the existing sputter-RBS set-up. Alternating sputtering and RBS analysis seem to be an adequate tool for the determination of the absolute sputter yield of Cu and this as well in the as under steady state conditions

Method for sequentially processing a multi-level interconnect circuit in a vacuum chamber

Science.gov (United States)

Routh, D. E.; Sharma, G. C. (Inventor)

1984-01-01

An apparatus is disclosed which includes a vacuum system having a vacuum chamber in which wafers are processed on rotating turntables. The vacuum chamber is provided with an RF sputtering system and a dc magnetron sputtering system. A gas inlet introduces various gases to the vacuum chamber and creates various gas plasma during the sputtering steps. The rotating turntables insure that the respective wafers are present under the sputtering guns for an average amount of time such that consistency in sputtering and deposition is achieved. By continuous and sequential processing of the wafers in a common vacuum chamber without removal, the adverse affects of exposure to atmospheric conditions are eliminated providing higher quality circuit contacts and functional device.

Novel magnetic controlled plasma sputtering method

International Nuclear Information System (INIS)

Axelevich, A.; Rabinovich, E.; Golan, G.

1996-01-01

A novel method to improve thin film vacuum sputtering is presented. This method is capable of controlling the sputtering plasma via an external set of magnets, in a similar fashion to the tetrode sputtering method. The main advantage of the Magnetic Controlled Plasma Sputtering (MCPS) is its ability to independently control all deposition parameters without any interference or cross-talk. Deposition rate, using the MCPS, is found to be almost twice the rate of triode and tetrode sputtering techniques. Experimental results using the MCPS to deposit Ni layers are described. It was demonstrated that using the MCPS method the ion beam intensity at the target is a result of the interaction of a homogeneous external magnetic field and the controlling magnetic fields. The MCPS method was therefore found to be beneficial for the production of pure stoichiometric thin solid films with high reproducibility. This method could be used for the production of compound thin films as well. (authors)

Vacuum system for applying reflective coatings on large-size optical components using the method of magnetron sputtering

Science.gov (United States)

Azerbaev, Alexander A.; Abdulkadyrov, Magomed A.; Belousov, Sergey P.; Ignatov, Aleksandr N.; Mukhammedzyanov, Timur R.

2016-10-01

Vacuum system for reflective coatings deposition on large-size optical components up to 4.0 m diameter using the method of magnetron sputtering was built at JSC LZOS. The technological process for deposition of reflective Al coating with protective SiO2 layer was designed and approved. After climatic tests the lifetime of such coating was estimated as 30 years. Uniformity of coating thickness ±5% was achieved on maximum diameter 4.0 m.

The AGS Booster vacuum systems

International Nuclear Information System (INIS)

Hseuh, H.C.

1989-01-01

The AGS Booster is a synchrotron for the acceleration of both protons and heavy ions. The design pressure of low 10 -11 mbar is required to minimize beam loss of the partially stripped heavy ions. To remove contaminants and to reduce outgassing, the vacuum chambers and the components located in them will be chemically cleaned, vacuum fired, baked then treated with nitric oxide. The vacuum sector will be insitu baked to a minimum of 200 degree C and pumped by the combination of sputter ion pumps and titanium sublimation pumps. This paper describes the design and the processing of this ultra high vacuum system, and the performance of some half-cell vacuum chambers. 9 refs., 7 figs

Ion-induced sputtering

International Nuclear Information System (INIS)

Yamamura, Yasumichi; Shimizu, Ryuichi; Shimizu, Hazime; Ito, Noriaki.

1983-01-01

The research on ion-induced sputtering has been continued for a long time, since a hundred or more years ago. However, it was only in 1969 by Sigmund that the sputtering phenomena were theoretically arranged into the present form. The reason why the importance of sputtering phenomena have been given a new look recently is the application over wide range. This paper is a review centering around the mechanism of causing sputtering and its characteristics. Sputtering is such a phenomenon that the atoms in the vicinity of a solid surface are emitted into vacuum by receiving a part of ion energy, or in other words, it is a kind of irradiation damage in the vicinity of a solid surface. In this meaning, it can be considered that the sputtering based on the ions located on the clean surface of a single element metal is simple, and has already been basically understood. On the contrary, the phenomena can not be considered to be fully understood in the case of alloys and compounds, because these surface conditions under irradiation are not always clear due to segregation and others. In the paper, the physical of sputtering, single element sputtering, the sputtering in alloys and compounds, and the behaviour of emitted particles are explained. Finally, some recent topics of the sputtering measurement by laser resonant excitation, the sputtering by electron excitation, chemical sputtering, and the sputtering in nuclear fusion reactors are described. (Wakatsuki, Y.)

An introduction to closed field sputtering (CFS) equipment

International Nuclear Information System (INIS)

Sugden, G.B.

1979-01-01

Ways have been sought to develop the vacuum sputtering process to reduce the source material temperature and to increase the deposition rate. A new industrial plating method superior to vacuum evaporation and electroplating has emerged. In this 'closed field sputtering' processes an electric field is applied between a coaxial anode and cathode and a magnetic field applied orthogonally to the electric field. Providing the flux density of the magnetic field is above a critical value no electrons flow to the anode but move along the magnetic lines around the cathode, enclosed in the magnetic field. A high density electron cloud with high ionization probability is therefore maintained. Low temperature sputtering can be attained due to very low energy loss of electrons at the anode. A pressure of about (2-5) x 10(-4) torr is used. High power can be applied to the equipment without producing much heat. It enables a large number of plastic parts to be coated with almost any nonmagnetic metal and alloys of metals on a commercial basis. It is also possible to produce coatings of oxides. nitrides and carbides of metals. The method of operation and a description of the equipment are given. Applications include car exteriors, household appliances, furniture toys and the electronics industry. (UK)

DEVELOPMENT OF TITANIUM NITRIDE COATING FOR SNS RING VACUUM CHAMBERS

International Nuclear Information System (INIS)

HE, P.; HSEUH, H.C.; MAPES, M.; TODD, R.; WEISS, D.

2001-01-01

The inner surface of the ring vacuum chambers of the US Spallation Neutron Source (SNS) will be coated with ∼100 nm of Titanium Nitride (TiN). This is to minimize the secondary electron yield (SEY) from the chamber wall, and thus avoid the so-called e-p instability caused by electron multipacting as observed in a few high-intensity proton storage rings. Both DC sputtering and DC-magnetron sputtering were conducted in a test chamber of relevant geometry to SNS ring vacuum chambers. Auger Electron Spectroscopy (AES) and Rutherford Back Scattering (RBS) were used to analyze the coatings for thickness, stoichiometry and impurity. Excellent results were obtained with magnetron sputtering. The development of the parameters for the coating process and the surface analysis results are presented

Polyester fabric coated with Ag/ZnO composite film by magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Yuan, Xiaohong, E-mail: yxhong1981_2004@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Xu, Wenzheng, E-mail: xwz8199@126.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Huang, Fenglin, E-mail: windhuang325@163.com [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China); Chen, Dongsheng, E-mail: mjuchen@126.com [Faculty of Clothing and Design, Minjiang University, Fuzhou 350121, Fujian (China); Wei, Qufu, E-mail: qfwei@jiangnan.edu.cn [Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu (China)

2016-12-30

Highlights: • Ag/ZnO composite film was successfully deposited on polyester fabric by magnetron sputtering technique. • Ag film was easily oxidized into Ag{sub 2}O film in high vacuum oxygen environment. • The zinc film coated on the surface of Ag film before RF reactive sputtering could protect the silver film from oxidation. • Polyester fabric coated with Ag/ZnO composite film can obtained structural color. • The anti-ultraviolet and antistatic properties of polyester fabric coated with Ag/ZnO composite film all were good. - Abstract: Ag/ZnO composite film was successfully deposited on polyester fabric by using direct current (DC) magnetron sputtering and radio frequency (RF) magnetron reaction sputtering techniques with pure silver (Ag) and zinc (Zn) targets. X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD) were used to examine the deposited film on the fabric. It was found that the zinc film coated on Ag film before RF reactive sputtering could protect the silver film from oxidation. Anti-ultraviolet property and antistatic property of the coated samples using different magnetron sputtering methods were also investigated. The experimental results showed that Ag film was oxidized into in Ag{sub 2}O film in high vacuum oxygen environment. The deposition of Zn film on the surface of the fabric coated with Ag film before RF reactive sputtering, could successfully obtained Ag/ZnO composite film, and also generated structural color on the polyester fabric.

Results of Monte-Carlo studies on backscattering and sputtering from 'pocket' and 'finned' structures

International Nuclear Information System (INIS)

Brown, K.P.

1978-01-01

A Monte-Carlo computer program which has been developed for studying backscattering and sputtering processes involving high energy particles in complex vacuum structures has been used to show that useful reductions in backscattering and sputtering can be achieved by pocketing or finning the wall surfaces of plasma containment vessels. (author)

Domino Platform: PVD Coaters for Arc Evaporation and High Current Pulsed Magnetron Sputtering

International Nuclear Information System (INIS)

Vetter, J; Müller, J; Erkens, G

2012-01-01

AlTiN and CrN coatings were deposited in hybrid DOMINO platforms by magnetron sputtering (DC-MS, DC-MS+HCP-MS, HCP-MS) and vacuum arc evaporation. The ion cleaning was done by the AEGD process. The coating rates and the energy efficiency of both deposition processes were compared. The roughness effects of the different coating types were discussed. Preliminary results of the change of pulse characteristics during simultaneously running of HCP-MS plus vacuum arc evaporation are shown.

Changes in the structural and electrical properties of vacuum post-annealed tungsten- and titanium-doped indium oxide films deposited by radio frequency magnetron sputtering

NARCIS (Netherlands)

Yan, L.T.; Schropp, R.E.I.

2011-01-01

Tungsten- and titanium-doped indium oxide (IWO and ITiO) filmswere deposited at room temperature by radio frequency (RF) magnetron sputtering, and vacuum post-annealing was used to improve the electron mobility. With increasing deposition power, the as deposited films showed an increasingly

Discharge modes at the anode of a vacuum arc

International Nuclear Information System (INIS)

Miller, H.C.

1982-01-01

The two most common anode modes in a vacuum arc are the low current mode, where the anode is basically inert; and the high current mode with a fully developed anode spot. This anode spot is very bright, has a temperature near the boiling point of the anode material, and is a copious source of vapor and energetic ions. However, other anode modes can exist. A low current vacuum arc with electrodes of readily sputterable material will emit a flux of sputtered atoms from the anode. An intermediate currents an anode footpoint can form. This footpoint is luminous, but much cooler than a true anode spot. Finally, a high current mode can exist where several small anode spots are present instead of a single large anode spot

Properties of indium tin oxide films deposited using High Target Utilisation Sputtering

International Nuclear Information System (INIS)

Calnan, S.; Upadhyaya, H.M.; Thwaites, M.J.; Tiwari, A.N.

2007-01-01

Indium tin oxide (ITO) films were deposited on soda lime glass and polyimide substrates using an innovative process known as High Target Utilisation Sputtering (HiTUS). The influence of the oxygen flow rate, substrate temperature and sputtering pressure, on the electrical, optical and thermal stability properties of the films was investigated. High substrate temperature, medium oxygen flow rate and moderate pressure gave the best compromise of low resistivity and high transmittance. The lowest resistivity was 1.6 x 10 -4 Ω cm on glass while that on the polyimide was 1.9 x 10 -4 Ω cm. Substrate temperatures above 100 deg. C were required to obtain visible light transmittance exceeding 85% for ITO films on glass. The thermal stability of the films was mainly influenced by the oxygen flow rate and thus the initial degree of oxidation. The film resistivity was either unaffected or reduced after heating in vacuum but generally increased for oxygen deficient films when heated in air. The greatest increase in transmittance of oxygen deficient films occurred for heat treatment in air while that of the highly oxidised films was largely unaffected by heating in both media. This study has demonstrated the potential of HiTUS as a favourable deposition method for high quality ITO suitable for use in thin film solar cells

Reduction of residual gas in a sputtering system by auxiliary sputter of rare-earth metal

International Nuclear Information System (INIS)

Li Dejie

2002-01-01

In film deposition by sputtering, the oxidation and nitrification of the sputtered material lead to degradation of film quality, particularly with respect to metal sulfide films. We propose to use auxiliary sputtering as a method to produce a fresh film of rare-earth metal, usually dysprosium (Dy), that absorbs the active gases in a sputtering system, greatly reducing the background pressure and protecting the film from oxidation and nitrification effectively. The influence of the auxiliary sputtering power consumption, sputtering time, and medium gas pressure on the background pressure in the vacuum chamber is investigated in detail. If the auxiliary sputtering power exceeds 120 W and the sputtering time is more than 4 min, the background pressure is only one fourth of the ultimate pressure pumped by an oil diffusion pump. The absorption activity of the sputtered Dy film continues at least an hour after completion of the auxiliary sputter. Applied to film deposition of Ti and ZnS, this technique has been proven to be effective. For the Ti film, the total content of N and O is reduced from 45% to 20% when the auxiliary sputtering power of Dy is 120 W, and the sputtering time is 20 min. In the case of ZnS, the content of O is reduced from 8% to 2%

Sputtering of amorphous carbon layers studied by laser induced fluorescence

International Nuclear Information System (INIS)

Pasch, E.

1992-07-01

In order to minimize the radiation losses, it is desirable to keep the plasmas in nuclear fusion devices free of high-Z-impurities. Therefore, the walls of TEXTOR and other tokamaks are covered with thin layers of amorphous carbon layers (a-C:H) or amorphous carbon/boron layers (a-C/B:H). The sputtering behaviour of these layers has been studied under bombardment by Ar + ions with energies of 1.5 keV and current densities of a few mA/cm 2 . Investigations of these coatings were carried out with the object to measure the velocity distribution of the sputtered atoms and the sputtered yields by laser induced fluorescence in the vacuum ultraviolet. (orig.)

FY1995 study to create the high density magnetic recording devices by using an ultra clean sputtering process; 1995 nendo choseijo sputter process ni yoru chokomitsudo jiki kiroku device no sosei

Energy Technology Data Exchange (ETDEWEB)

NONE

1997-03-01

It is important to control microstructure of thin film magnetic devices such as recording heads and media, in order to induce excellent magnetic properties. Since the impurities in the sputtering atmosphere is easily thought to affect strongly on the initial film growth, we will develop the highly purified sputtering atmosphere to establish a fabrication technology of ultra thin metallic films with desirable microstructure. A specialized multi-sputtering system which has extremely clean atmosphere (impurity level: 1/10000 compared to conventional systems) were realized by (a) decreasing out-gassing rate from vacuum chamber, pumping system, cathode, robot, etc. and (b) using ultra-clean processing gas. The base pressure was 8 x 10{sup -12} Torr (XHV) and the build-up rate was less than 1 x 10{sup -8} Torrl/sec. From the correlation between the microstructure and magnetic properties of a part of spin-valve GMR films, the guiding principle for the microstructural design were clarified to induce the exchange coupling effectively at the ferro/antiferromagnetic interface and to enhance the GMR effect at the magnetic/non-magnetic interface. The mechanism of' Cr segregation on the grain boundaries was clarified, in thin film media deposited under ultra clean sputtering process. The material specification of the magnetic ultra thin film media for high density recording with low media noise were designed from view of the thermal agitation. (NEDO)

Epitaxial growth of rhenium with sputtering

Energy Technology Data Exchange (ETDEWEB)

Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

2006-02-21

We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

Specific features of fullerene-bearing thin film growth using ion beam vacuum sputtering of fullerene mixtures with B, Fe, Se, Gd and Na

International Nuclear Information System (INIS)

Semenov, A.P.; Semenova, I.A.; Bulina, N.V.; Lopatin, V.A.; Karmanov, N.S.; Churilov, G.N.

2005-01-01

A new approach to the growth of films containing fullerenes and doping elements is described. It is suggested that a cluster mechanism of the target sputtering by accelerated ions makes possible the deposition of fullerenes on a substrate with a certain probability for dopant atoms being introduced into the cavities of fullerene molecules and a higher probability of the doping element introduction between fullerene molecules. The proposed method has been experimentally implemented by using an Ar ion beam to sputter C 60 /C 70 fullerene mixtures, synthesized in a plasmachemical reactor at a pressure of 10 5 Pa and containing a doping element, i.e. Fe, Na, B, Gd or Se. Micron-thick films containing C 60 and C 70 fullerenes and the corresponding dopant element, i.e. Fe, Na, B, Gd or Se, were grown from dopant-containing fullerene mixtures by ion beam sputtering in a vacuum of ∼10 -2 Pa [ru

Particle contamination in vacuum systems

International Nuclear Information System (INIS)

Martignac, J.; Bonin, B.; Henriot, C.; Poupeau, J.P.; Koltchakian, I.; Kocic, D.; Herbeaux, Ch.; Marx, J.P.

1996-01-01

Many vacuum devices, like RF cavities, are sensitive to particle contamination. This fact has motivated a considerable effort of cleanliness from the SRF community. The present paper reports the first results of a general study trying to identify the most contaminating steps during assembly and vacuum operation of the cavity. The steps investigated here are gasket assembly, evacuation and venting of the vacuum system, and operation of sputter ion pumps. (author)

Particle contamination in vacuum systems

International Nuclear Information System (INIS)

Martignac, J.; Bonin, B.; Henriot, C.; Poupeau, J.P.; Koltchakian, I.; Kocic, D.; Herbeaux, Ch.; Marx, J.P.

1996-01-01

Many vacuum devices, like RF cavities, are sensitive to particle contamination. This fact has motivated a considerable effort of cleanliness from the SRF community. The first results of a general study trying to identify the most contaminating steps during assembly and vacuum operation of the cavity is reported. The steps investigated here are gasket assembly, evacuation and venting of the vacuum system, and operation of sputter ion pumps. (author)

High power pulsed magnetron sputtering of transparent conducting oxides

International Nuclear Information System (INIS)

Sittinger, V.; Ruske, F.; Werner, W.; Jacobs, C.; Szyszka, B.; Christie, D.J.

2008-01-01

High power pulsed magnetron sputtering (HPPMS) has been used in order to study the deposition of transparent conducting oxides. We summarize the studies carried out on different materials (indium tin oxide-ITO and aluminium-doped zinc oxide-AZO) using rather different technological approaches, namely sputtering of ceramic targets and reactive sputtering. For the deposition of AZO reactive HPPMS for metallic targets has been used. A feedback control loop has been implemented in order to stabilize the discharge at any given setpoint on the hysteresis curve. The hysteresis was also found to have a rather untypical form. Reactive HPPMS was found to be a promising tool for obtaining high quality films of low total thickness. In the case of ITO deposition a ceramic target has been used. The process has been characterized in terms of its plasma emission and increasing indium ionization was found for higher peak power densities. The properties of the deposited films were compared to DC sputtered films. While for DC sputtering the choice of oxygen addition and shieldings is crucial for determining surface morphology and resistivity, in HPPMS sputtering peak power density has been found to be a good parameter for influencing the crystal structure. The morphologies obtained differ strongly from those seen in DC sputtering. At high power densities films with low surface roughness and excellent resistivity could be deposited without the use of shieldings

Benchmarking Pt and Pt-lanthanide sputtered thin films for oxygen electroreduction

DEFF Research Database (Denmark)

Zamburlini, Eleonora; Jensen, Kim Degn; Stephens, Ifan E.L.

2017-01-01

Platinum-lanthanide alloys are very promising as active and stable catalysts for the oxygen reduction reaction (ORR) in low-temperature fuel cells. We have fabricated Pt and Pt5Gd metallic thin films via (co-)sputtering deposition in an ultra-high vacuum (UHV) chamber. The electrochemical ORR...

Evaluation of ion-sputtered molybdenum disulfide bearings for spacecraft gimbals

Science.gov (United States)

Loewenthal, S. H.; Chou, R. G.; Hopple, G. B.; Wenger, W. L.

1994-07-01

High-density, sputtered molybdenum disulfide films (MoS2) were investigated as lubricants for the next generation of spacecraft gimbal bearings where low torque signatures and long life are required. Low friction in a vacuum environment, virturally no out-gassing, insensitivity to low temperature, and radiation resistance of these lubricant films are valued in such applications. One hundred and twenty five thousand hours of acumulated bearing test time were obtained on 24 pairs of flight-quality bearings ion-sputtered with three types of advanced MoS2 films. Life tests were conducted in a vacuum over a simulated duty cycle for a space payload gimbal. Optimum retainer and ball material composition were investigated. Comparisions were made with test bearings lubricated with liquid space lubricants. Self-lubricating PTFE retainers were required for long life, i.e., greater than 40 million gimbal cycles. Bearings with polyimide retainers, silicon nitride ceramic balls, or steel balls sputtered with MoS2 film suffered early torque failure, irrespective of the type of race-sputtered MoS2 film. Failure generally resulted from excess film or retainer debris deposited in the ball track which tended to jam the bearing. Both grease lubricated and the better MoS2 film lubricated bearings produced long lives, although the torque with liquid lubricants was lower and less irregular.

Effect of residual gas on structural, electrical and mechanical properties of niobium films deposited by magnetron sputtering deposition

Science.gov (United States)

Wang, Lanruo; Zhong, Yuan; Li, Jinjin; Cao, Wenhui; Zhong, Qing; Wang, Xueshen; Li, Xu

2018-04-01

Magnetron sputtering is an important method in the superconducting thin films deposition. The residual gas inside the vacuum chamber will directly affect the quality of the superconducting films. In this paper, niobium films are deposited by magnetron sputtering under different chamber residual gas conditions. The influence of baking and sputtering process on residual gas are studied as well. Surface morphology, electrical and mechanical properties of the films are analysed. The residual gas analysis result before the sputtering process could be regarded as a reference condition to achieve high quality superconducting thin films.

Synthesis of nanoparticles using high-pressure sputtering for magnetic domain imaging

International Nuclear Information System (INIS)

Shah, Prasanna; Gavrin, A.

2006-01-01

We have developed a modified sputtering gun for direct synthesis of metallic nanoparticles, and used this system to produce magnetic domain images using high-resolution Bitter microscopy (HRBM). The nanoparticles are produced at 900 mTorr inside the gun and transported to the main vacuum chamber by the pressure difference between the chamber and the gun interior. Fe particles synthesized using the particle gun have been characterized using X-ray diffraction, atomic force microscopy, and transmission electron microscopy techniques. The particles are 15-30 nm in size with a pure BCC phase. Further, we have deposited these Fe nanoparticles on magnetic recording media and observed the domain patterns using optical microscopy, scanning electron microscopy, and atomic force microscopy. We achieve a spatial resolution of at most 80 nm

Dense and high-stability Ti2AlN MAX phase coatings prepared by the combined cathodic arc/sputter technique

Science.gov (United States)

Wang, Zhenyu; Liu, Jingzhou; Wang, Li; Li, Xiaowei; Ke, Peiling; Wang, Aiying

2017-02-01

Ti2AlN belongs to a family of ternary nano-laminate alloys known as the MAX phases, which exhibit a unique combination of metallic and ceramic properties. In the present work, the dense and high-stability Ti2AlN coating has been successfully prepared through the combined cathodic arc/sputter deposition, followed by heat post-treatment. It was found that the as-deposited Ti-Al-N coating behaved a multilayer structure, where (Ti, N)-rich layer and Al-rich layer grew alternately, with a mixed phase constitution of TiN and TiAlx. After annealing at 800 °C under vacuum condition for 1.5 h, although the multilayer structure still was found, part of multilayer interfaces became indistinct and disappeared. In particular, the thickness of the Al-rich layer decreased in contrast to that of as-deposited coating due to the inner diffusion of the Al element. Moreover, the Ti2AlN MAX phase emerged as the major phase in the annealed coatings and its formation mechanism was also discussed in this study. The vacuum thermal analysis indicated that the formed Ti2AlN MAX phase exhibited a high-stability, which was mainly benefited from the large thickness and the dense structure. This advanced technique based on the combined cathodic arc/sputter method could be extended to deposit other MAX phase coatings with tailored high performance like good thermal stability, high corrosion and oxidation resistance etc. for the next protective coating materials.

Changes in X-ray photoelectron spectra of yttria-tetragonal zirconia polycrystal by ion sputtering

Energy Technology Data Exchange (ETDEWEB)

Watanabe, Eiko; Yoshinari, Masao [Tokyo Dental College, Oral Health Science Center, Tokyo, Chiyoda-ku (Japan)

2016-04-15

This paper reports changes in X-ray photoelectron spectroscopy spectra of yttria-tetragonal zirconia polycrystal (Y-TZP) brought about by Ar ion sputtering. The changes in the core-level spectra of Y-TZP suggest that preferential sputtering of oxygen occurred. A new peak was observed near 0 eV binding energy accompanied with changes in the core-level spectra by the sputtering. After 18 h in a high vacuum following the sputtering, the spectra changed by the sputtering were returned to their original shapes. In contrast, the color of Y-TZP was changed from white to pale brown by X-ray irradiation and was changed from pale brown to dark gray by ion sputtering. However, when the new peak near 0 eV decreased after 18 h, no color change was observed. Therefore, it is thought that the new peak was mainly derived from electrons trapped in various kinds of oxygen vacancies created by the sputtering in other than color centers. (orig.)

In situ conditioning for proton storage ring vacuum systems

International Nuclear Information System (INIS)

Blechschmidt, D.

1978-01-01

Average pressure and vacuum-stability limit as expected in the presence of a proton beam were measured after in situ treatments such as bakeout under various conditions, argon glow-discharge cleaning and sputter deposition of titanium. Measurements were carried out for test pipes made of stainless steel (untreated, electropolished, or cooled to 77 K), pure titanium and aluminum alloy. The measurement method used to obtain the vacuum-stability limit in the laboratory and in a prototype system is described. The results can be applied also to other systems of different geometry by use of scaling laws. In situ conditioning generally has a stronger influence on vacuum performance than a particular choice of material. Bakeout gives low average pressures and rather good vacuum stability. Glow discharges also increase the vacuum stability but have only a small effect on the static pressure. Coating the beam-pipe wall with titanium by in situ sputtering provides large linear pumping, thus a lower pressure and an extremely good vacuum stability

Effects of deposition and annealing atmospheres on phase transition of tungsten oxide films grown by ultra-high-vacuum reactive sputtering

International Nuclear Information System (INIS)

Ghen, G.S.; Liao, W.L.; Chen, S.T.; Su, W.C.; Lin, C.K.

2005-01-01

A series of oxygen-contained tungsten films were grown on Si(100) substrates without intentional heating by ultra-high-vacuum reactive magnetron sputtering at a constant argon pressure (P Ar ) of 1.33 x 10 -1 Pa mixed with a wide range of O 2 partial pressures (P O ) from 1.33 x 10 -4 to 4 x 10 -1 Pa, equivalent to P O -to-P Ar ratios (P O/Ar ) from 1 x 10 -3 to 3. The effect of varying P O/Ar on phase evolution was evaluated by annealing the films in a controlled atmosphere (argon or oxygen) at 500 or 700 deg. C for 1 h. Grazing incident X-ray diffraction and transmission electron microscopy, together with the data of electrical resistivity and deposition rate, reveal that gradually increasing P O/Ar induces a sequence of phase transitions from nanocrystalline β-W(O) (P O/Ar ≤ 0.1), amorphous WO 2 (P O/Ar = 0.6) to amorphous WO 3 (P O/Ar ≥ 2). When annealed in argon atmosphere, the amorphous WO 2 and WO 3 exhibit a very different magnitude of crystallization temperature (T c ) and can be transformed, respectively, into monoclinic WO 2 (T c = 500 deg. C) and tetragonal WO 3 (T c = 700 deg. C). However, the oxidizing atmosphere plays a role to accelerate significantly the crystallization of the amorphous WO 2 into a completely different phase (monoclinic WO 3 ) at a significantly reduced T c of 500 deg. C

[Applications of self-renewing coatings to improved vacuum materials, hydrogen permeation barriers and sputter-resistant materials

International Nuclear Information System (INIS)

1985-01-01

The phenomena of Gibbsian segregation, radiation-induced segregation and radiation-induced precipitation modify the surface composition and properties of alloys and compounds. In some cases, the change in properties is both substantial and useful, the most notable example being that of stainless steel. When surface-modifying phenomena are investigated as a class, a number of additional materials emerge as candidates for study, having potential applications in a number of technologically important areas. These materials are predicted to produce self-sustaining coatings which provide hydrogen permeation barriers, low-sticking and stimulated desorption coefficients for vacuum applications, and low-Z, sputtering-resistant surfaces for fusion applications. Several examples of each type of material are presented, along with a discussion of the experimental verification of their properties and the status of the corresponding applications development program

Niobium sputter deposition on quarter wave resonators

CERN Document Server

Viswanadham, C; Jayaprakash, D; Mishra, R L

2003-01-01

Niobium sputter deposition on quarter wave copper R.F resonators, have been taken up in our laboratory, An ultra high vacuum system was made for this purpose. Niobium exhibits superconducting properties at liquid Helium temperature. A uniform coating of about 1.5 mu m of niobium on the internal surfaces of the copper resonant cavities is desired. Power dissipation in the resonators can be greatly reduced by making the internal surfaces of the R.F cavity super conducting. (author)

High-speed deposition of protective films of aluminium oxide by the method of reactive magnetron sputtering

International Nuclear Information System (INIS)

Bugaev, S.P.; Zakhrov, A.N.; Ladyzhenskii, O.P.; Sochugov, M.S.

2001-01-01

The high optical characteristics of aluminium films made them attractive for different functional and decorative applications. It is well-known that the corrosion resistance of alloying is determined by the presence of the oxide film on its surface, but on the aluminium films, deposited by vacuum methods, the resistance is extremely low resulting in the relatively rapid failure of the coating. At present, there is a large number of methods of depositing the films of aluminium oxide. In most cases, it is recommended to use reactive magnetron sputtering of an aluminium target in a magnetron spraying system (MSS) using direct current, on dispersion of the target of aluminium oxide in a high-frequency MSS

Pumping behavior of sputter ion pumps

International Nuclear Information System (INIS)

Chou, T.S.; McCafferty, D.

The ultrahigh vacuum requirements of ISABELLE is obtained by distributed pumping stations. Each pumping station consists of 1000 l/s titanium sublimation pump for active gases (N 2 , H 2 , O 2 , CO, etc.), and a 20 l/s sputter ion pump for inert gases (methane, noble gases like He, etc.). The combination of the alarming production rate of methane from titanium sublimation pumps (TSP) and the decreasing pumping speed of sputter ion pumps (SIP) in the ultrahigh vacuum region (UHV) leads us to investigate this problem. In this paper, we first describe the essential physics and chemistry of the SIP in a very clean condition, followed by a discussion of our measuring techniques. Finally measured methane, argon and helium pumping speeds are presented for three different ion pumps in the range of 10 -6 to 10 -11 Torr. The virtues of the best pump are also discussed

Ultra high vacuum systems for accelerators

International Nuclear Information System (INIS)

Loefgren, P.

2001-01-01

mbar, a combination of pumps is needed. At these low pressures there are, however, some pumps that are disqualified, such as pumps which not are bakable (some cryopumps) and pumps that are using organic fluids for pumping (diffusion pumps) or as lubricants (turbopumps). Instead a combination of pumps like sputter-ion pumps, getter pumps and cryo pumps are routinely used today at accelerator facilities to reach this extreme vacuum regime. In addition to pumping efficiency aspects like operation stability and costs have to be considered when choosing the appropriate pumps for the vacuum system. Even if quite a lot of work has been devoted to develop vacuum gauges for measuring pressures below 10 -11 mbar, only a few commercial gauges are available. It is of great importance that the gauge is capable of measuring without influencing the pressure to be measured, which often is the case. Most gauges used today in this pressure range are improved versions of the old Bayard-Alpert type developed in 1950. Using the storage ring, CRYRING, at the Manne Siegbahn Laboratory in Stockholm Sweden as an example it will be shown how it, with the right combination of vacuum pumps and materials, is possible to reach and keep the pressure below 10 -11 mbar over a long time during an experiment. Since a vacuum system of this type consists of more than just the chamber walls, pumps and gauges there are several other aspects that have to be considered in order to maintain low pressures. Detectors, electric wiring and all kinds of feedthroughs are just a few examples of weak links in the vacuum system. Other issues that will discussed are how to measure pressure when commercial gauges fail and how it is possible to use the background gas in a more constructive way instead of just considering it as a problem. (author)

Non-stoichiometry of MoS2 phase prepared by sputtering

International Nuclear Information System (INIS)

Ito, T.; Nakajima, K.

1978-01-01

The lattice parameters and S/Mo atomic ratio in sputtered MoS 2 films have been examined as a function of sputtering conditions, especially the vacuum pressure in the chamber. It was found that the deposited films had a defect MoS 2 structure ranging from 1.6 to 2 in S/Mo ratio, depending on the pressure. (author)

Photonometers for coating and sputtering machines

Science.gov (United States)

Oupický, P.; Jareš, D.; Václavík, J.; Vápenka, D.

2013-04-01

The concept of photonometers (alternative name of optical monitor of a vacuum deposition process) for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR) for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

In Situ Hall Effect Monitoring of Vacuum Annealing of In2O3:H Thin Films

Directory of Open Access Journals (Sweden)

Hans F. Wardenga

2015-02-01

Full Text Available Hydrogen doped In2O3 thin films were prepared by room temperature sputter deposition with the addition of H2O to the sputter gas. By subsequent vacuum annealing, the films obtain high mobility up to 90 cm2/Vs. The films were analyzed in situ by X-ray photoelectron spectroscopy (XPS and ex situ by X-ray diffraction (XRD, optical transmission and Hall effect measurements. Furthermore, we present results from in situ Hall effect measurements during vacuum annealing of In2O3:H films, revealing distinct dependence of carrier concentration and mobility with time at different annealing temperatures. We suggest hydrogen passivation of grain boundaries as the main reason for the high mobility obtained with In2O3:H films.

Deposition Rates of High Power Impulse Magnetron Sputtering: Physics and Economics

Energy Technology Data Exchange (ETDEWEB)

Anders, Andre

2009-11-22

Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase of the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes to due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes of the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction of the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits considered.

Deposition rates of high power impulse magnetron sputtering: Physics and economics

International Nuclear Information System (INIS)

Anders, Andre

2010-01-01

Deposition by high power impulse magnetron sputtering (HIPIMS) is considered by some as the new paradigm of advanced sputtering technology, yet this is met with skepticism by others for the reported lower deposition rates, if compared to rates of more conventional sputtering of equal average power. In this contribution, the underlying physical reasons for the rate changes are discussed, including (i) ion return to the target and self-sputtering, (ii) the less-than-linear increase in the sputtering yield with increasing ion energy, (iii) yield changes due to the shift of species responsible for sputtering, (iv) changes due to greater film density, limited sticking, and self-sputtering on the substrate, (v) noticeable power losses in the switch module, (vi) changes in the magnetic balance and particle confinement of the magnetron due to self-fields at high current, and (vii) superposition of sputtering and sublimation/evaporation for selected materials. The situation is even more complicated for reactive systems where the target surface chemistry is a function of the reactive gas partial pressure and discharge conditions. While most of these factors imply a reduction in the normalized deposition rate, increased rates have been reported for certain conditions using hot targets and less poisoned targets. Finally, some points of economics and HIPIMS benefits are considered.

Reactive magnetron sputtering model at making Ti-TiOx coatings

International Nuclear Information System (INIS)

Luchkin, A G; Kashapov, N F

2014-01-01

Mathematical model of reactive magnetron sputtering for plant VU 700-D is described. Approximating curves for experimental current-voltage characteristic for two gas input schemas are shown. Choice of gas input schema influences on model parameters (mainly on pumping speed). Reactive magnetron sputtering model allows develop technology of Ti - TiO x coatings deposition without changing atmosphere and pressure in vacuum chamber

ISR vacuum system

CERN Multimedia

CERN PhotoLab

1970-01-01

A pressure of 5 x 10-11 Torr has been obtained repreatedly in this pilot section of the ISR vacuum system. The pilot section is 45 m long is pumped by 9 sputter-ion pumps pf 350 l/s pumping speed, and is baked out at 200 degrees C before each pump down.

Effect of argon ion sputtering of surface on hydrogen permeation through vanadium

International Nuclear Information System (INIS)

Yamawaki, Michio; Namba, Takashi; Yoneoka, Toshiaki; Kanno, Masayoshi; Shida, Koji.

1983-01-01

In order to measure the hydrogen permeation rate through V with atomically cleaned surface, an Ar ion sputtering apparatus has been installed in the hydrogen permeability measuring system. The permeation rate of the initial specimen was found to be increased by about one order of magnitude after Ar ion sputtering of its upstream side surface. Repeating of such a sputter-cleaning was not so much effective in increasing the steady state permeation rate as the initial sputtering was, but it accelerated the transient response rate by a factor of 2 or 3. The transient response rate was also accelerated by the increase of hydrogen pressure, but this effect tended to be diminished by the sputter-cleaning of specimen surface. The surface impurity layer on the downstream side of specimen was also inferred to act as a diffusion barrier affecting the steady state permeation rate. The present value of activation energy for hydrogen permeation through V at temperatures below 873K was the smallest one ever obtained, showing that the surface effect was minimized in the present study on account of the surface sputter-cleaning in addition to the ultra high vacuum system. (author)

Photonometers for coating and sputtering machines

Directory of Open Access Journals (Sweden)

Václavík J.

2013-05-01

Full Text Available The concept of photonometers (alternative name of optical monitor of a vacuum deposition process for coating and sputtering machines is based on photonometers produced by companies like SATIS or HV Dresden. Photometers were developed in the TOPTEC centre and its predecessor VOD (Optical Development Workshop of Institut of Plasma Physics AS CR for more than 10 years. The article describes current status of the technology and ideas which will be incorporated in next development steps. Hardware and software used on coating machines B63D, VNA600 and sputtering machine UPM810 is presented.

ISR vacuum system

CERN Multimedia

CERN PhotoLab

1971-01-01

Some of the most important components of the vacuum system are shown. At the left, the rectangular box is a sputter-ion pump inside its bake-out oven. The assembly in the centre includes a sector valve, three roughing valves, a turbomolecular pump, a rotary backing pump and auxiliary equipment. At the right, the small elbow houses a Bayard-

ELETTRA vacuum system

International Nuclear Information System (INIS)

Bernardini, M.; Daclon, F.; Giacuzzo, F.; Miertusova, J.; Pradal, F.; Kersevan, R.

1993-01-01

Elettra is a third-generation synchrotron light source which is being built especially for the use of high brilliance radiation from insertion devices and bending magnets. The UHV conditions in a storage ring lead to a longer beam lifetime - one of the most important criterion. The Elettra vacuum system presents some pecularities which cannot be found in any already existing machine. The final version of bending magnet vacuum chamber is presented. After chemical and thermal conditioning the specific outgassing rate of about 1.5e-12 Torr. liters sec -1 cm -2 was obtained. A microprocessor-controlled system has been developed to perform bake-out at the uniform temperature. The etched-foil type heaters are glued to the chamber and Microtherm insulation is used. UHV pumps based on standard triode sputter-ion pumps were modified with ST 707 NEG (Non Evaporable Getter) modules. A special installation enables the resistive activation of getters and significantly increases pumping speed for hydrogen and other residual gases (except methane and argon). All these technological innovations improve vacuum conditions in Elettra storage ring and consequently also the other parameters of the light source

The measurement of vacuum at high voltage terminal of the FOTIA facility at BARC

International Nuclear Information System (INIS)

Kansara, M.J.; Sapna, P.; Subrahmanyam, N.B.V.; Bhatt, J.P.; Gupta, S.K.; Singh, P.

2003-01-01

Full text: In FOTIA, the ion beams accelerated by the low energy tube are injected into the high-energy accelerating tube using the 180 deg folding magnet. In order to have maximum transmission through the magnet chamber the vacuum in this section should be in the range of 10 -8 Torr. The chamber is very narrow (14 mm x 24 mm) and offers low conductance to the vacuum system. For maintaining the required UHV inside this chamber and associated beam lines inside the high voltage terminal at 6 MV, a sputter ion pump (120 litres/sec) is used. However, the control of the ion pump and measurement of the vacuum in the chamber has to be done from the control consol located at ground potential. This has been accomplished through a fibre optic data telemetry system, which offers electrical isolation of 6 MV. This fibre optic system is integrated to the main control system of the FOTIA. For controlling and monitoring the ion pump DOUT and ADC modules of the CAMAC system are used to provide interfacing signals to the fibre optic system. For the measurement of the vacuum, the gauge output provided by the ion pump is converted to a suitable light signal (1 kHz to 10 kHz) and is transmitted to the fibre optic link box (located at ground). At ground level this light signal is converted back to a voltage signal and transmitted to ADC module of the CAMAC system. This voltage signal is calibrated against the vacuum measured in the terminal, which is available in the control room via computer connected to the CAMAC system. In this paper, details of the above system will be presented

Self-sputtering runaway in high power impulse magnetron sputtering: The role of secondary electrons and multiply charged metal ions

International Nuclear Information System (INIS)

Anders, Andre

2008-01-01

Self-sputtering runaway in high power impulse magnetron sputtering is closely related to the appearance of multiply charged ions. This conclusion is based on the properties of potential emission of secondary electrons and energy balance considerations. The effect is especially strong for materials whose sputtering yield is marginally greater than unity. The absolute deposition rate increases ∼Q 1/2 , whereas the rate normalized to the average power decreases ∼Q -1/2 , with Q being the mean ion charge state number

High-voltage high-current triggering vacuum switch

International Nuclear Information System (INIS)

Alferov, D.F.; Bunin, R.A.; Evsin, D.V.; Sidorov, V.A.

2012-01-01

Experimental investigations of switching and breaking capacities of the new high current triggered vacuum switch (TVS) are carried out at various parameters of discharge current. It has been shown that the high current triggered vacuum switch TVS can switch repeatedly a current from units up to ten kiloampers with duration up to ten millisecond [ru

High power impulse magnetron sputtering and its applications

Science.gov (United States)

Yan, YUAN; Lizhen, YANG; Zhongwei, LIU; Qiang, CHEN

2018-04-01

High power impulse magnetron sputtering (HiPIMS) has attracted a great deal of attention because the sputtered material is highly ionized during the coating process, which has been demonstrated to be advantageous for better quality coating. Therefore, the mechanism of the HiPIMS technique has recently been investigated. In this paper, the current knowledge of HiPIMS is described. We focus on the mechanical properties of the deposited thin film in the latest applications, including hard coatings, adhesion enhancement, tribological performance, and corrosion protection layers. A description of the electrical, optical, photocatalytic, and functional coating applications are presented. The prospects for HiPIMS are also discussed in this work.

Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

Energy Technology Data Exchange (ETDEWEB)

Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

2014-07-15

Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

Vacuum system problems of EBT: a steady-state fusion experiment

International Nuclear Information System (INIS)

Livesey, R.L.

1981-01-01

Many of the vacuum problems faced by EBT will soon be shared by other plasma devices as high-power microwave systems and long pulse lengths become more common. The solutions used on EBT (such as the raised lip with elastomer seal) are not unique; however, experience has shown that microwave-compatible designs must be carefully thought out. All details of the vacuum must be carefully thought out. All details of the vacuum must be carefully screened in advance to insure that microwaves do not leak into pumps or diagnostics where they can cause major damage. Sputter coating, which even now is noticeably present in most pulsed plasma systems, becomes much worse as systems approach steady state. And finally, radiation degradation of components which is presently a minor problem will become significant on high-power microwave-fed devices, such as EBT-P

Catalytic growth of ZnO nanostructures by r.f. magnetron sputtering

Directory of Open Access Journals (Sweden)

Arroyo-Hernández María

2011-01-01

Full Text Available Abstract The catalytic effect of gold seed particles deposited on a substrate prior to zinc oxide (ZnO thin film growth by magnetron sputtering was investigated. For this purpose, selected ultra thin gold layers, with thicknesses close to the percolation threshold, are deposited by thermal evaporation in ultra high vacuum (UHV conditions and subsequently annealed to form gold nanodroplets. The ZnO structures are subsequently deposited by r.f. magnetron sputtering in a UHV chamber, and possible morphological differences between the ZnO grown on top of the substrate and on the gold are investigated. The results indicate a moderate catalytic effect for a deposited gold underlayer of 4 nm, quite close to the gold thin film percolation thickness.

High current vacuum closing switch

International Nuclear Information System (INIS)

Dolgachev, G.I.; Maslennikov, D.D.; Romanov, A.S.; Ushakov, A.G.

2005-01-01

The paper proposes a powerful pulsed closing vacuum switch for high current commutation consisting of series of the vacuum diodes with near 1 mm gaps having closing time determined by the gaps shortening with the near-electrode plasmas [ru

Quartz crystal microbalance-based system for high-sensitivity differential sputter yield measurements

International Nuclear Information System (INIS)

Rubin, B.; Topper, J. L.; Farnell, C. C.; Yalin, A. P.

2009-01-01

We present a quartz crystal microbalance-based system for high sensitivity differential sputter yield measurements of different target materials due to ion bombardment. The differential sputter yields can be integrated to find total yields. Possible ion beam conditions include ion energies in the range of 30-350 eV and incidence angles of 0 deg. - 70 deg. from normal. A four-grid ion optics system is used to achieve a collimated ion beam at low energy (<100 eV) and a two-grid ion optics is used for higher energies (up to 750 eV). A complementary weight loss approach is also used to measure total sputter yields. Validation experiments are presented that confirm high sensitivity and accuracy of sputter yield measurements.

Characteristics of ZnO/diamond thin films prepared by RF magnetron sputtering

CERN Document Server

Park, Y W; Lee, J G; Baik, Y J; Kim, H J; Jung, H J; Choi, W K; Cho, B H; Park, C Y

1999-01-01

Due to its high Young's modulus, diamond has the highest acoustic wave velocity among all materials and is expected to be a candidate substrate for high-frequency surface acoustic wave(SAW) devices. In this study, the deposition of ZnO, as a piezoelectric layer, on a diamond substrate is investigated. ZnO has been fabricated by using RF magnetron sputtering with a ZnO target and various Ar/O sub 2 gas ratios, RF powers, and substrate temperatures at a vacuum of 10 sup - sup 5 Torr. The sputtered ZnO films are characterized by X-ray diffraction (XRD), Rutherford backscattering spectroscopy (RBS), X-ray photoelectron spectroscopy (XPS), and I-V characteristics. All the films show only a (002) orientation. The atomic concentration of the sputtered ZnO films is changed by the oxygen gas ratio, and the ZnO films are grown with a homogeneous composition over their entire thickness. The electrical resistivity of the films varied from 4x10 sup 3 to 7x10 sup 8 OMEGA cm, depending on the Ar/O sub 2 gas ratio. The phase...

Effect of stress, strain and optical properties in vacuum and normal annealed ZnO thin films using RF magnetron sputtering

Science.gov (United States)

Kumar, B. Santhosh; Purvaja, K.; Harinee, N.; Venkateswaran, C.

2018-05-01

Zinc oxide thin films have been deposited on quartz substrate using RF magnetron sputtering. The deposited films were subjected to different annealing atmosphere at a fixed temperature of 500 °C for 5h. The X-ray diffraction (XRD) patterns reveals the shift in the peak of both normal annealed and vacuum annealed thin films when compared to as-deposited ZnO film. The crystallite size, intrinsic stress and other parameters were calculated from XRD data. The surface morphology of the obtained films were studied using Atomic force microscopy (AFM). From Uv-Visible spectroscopy, the peak at 374 nm of all the films is characteristics of ZnO. The structural, thermal stability and optical properties of the annealed ZnO films are discussed in detail.

High rate reactive sputtering in an opposed cathode closed-field unbalanced magnetron sputtering system

Science.gov (United States)

Sproul, William D.; Rudnik, Paul J.; Graham, Michael E.; Rohde, Suzanne L.

1990-01-01

Attention is given to an opposed cathode sputtering system constructed with the ability to coat parts with a size up to 15 cm in diameter and 30 cm in length. Initial trials with this system revealed very low substrate bias currents. When the AlNiCo magnets in the two opposed cathodes were arranged in a mirrored configuration, the plasma density at the substrate was low, and the substrate bias current density was less than 1 mA/sq cm. If the magnets were arranged in a closed-field configuration where the field lines from one set of magnets were coupled with the other set, the substrate bias current density was as high as 5.7 mA/sq cm when NdFeB magnets were used. In the closed-field configuration, the substrate bias current density was related to the magnetic field strength between the two cathodes and to the sputtering pressure. Hard well-adhered TiN coatings were reactively sputtered in the opposed cathode system in the closed-field configuration, but the mirrored configuration produced films with poor adhesion because of etching problems and low plasma density at the substrate.

Cathodic arc sputtering of functional titanium oxide thin films, demonstrating resistive switching

Energy Technology Data Exchange (ETDEWEB)

Shvets, Petr, E-mail: pshvets@innopark.kantiana.ru; Maksimova, Ksenia; Demin, Maxim; Dikaya, Olga; Goikhman, Alexander

2017-05-15

The formation of thin films of the different stable and metastable titanium oxide phases is demonstrated by cathode arc sputtering of a titanium target in an oxygen atmosphere. We also show that sputtering of titanium in vacuum yields the formation of titanium silicides on the silicon substrate. The crystal structure of the produced samples was investigated using Raman spectroscopy and X-ray diffraction. We conclude that cathode arc sputtering is a flexible method suitable for producing the functional films for electronic applications. The functionality is verified by the memory effect demonstration, based on the resistive switching in the titanium oxide thin film structure.

Carbon Back Sputter Modeling for Hall Thruster Testing

Science.gov (United States)

Gilland, James H.; Williams, George J.; Burt, Jonathan M.; Yim, John T.

2016-01-01

In support of wear testing for the Hall Effect Rocket with Magnetic Shielding (HERMeS) program, the back sputter from a Hall effect thruster plume has been modeled for the NASA Glenn Research Centers Vacuum Facility 5. The predicted wear at a near-worst case condition of 600 V, 12.5 kW was found to be on the order of 3 4 mkhour in a fully carbon-lined chamber. A more detailed numerical monte carlo code was also modified to estimate back sputter for a detailed facility and pumping configuration. This code demonstrated similar back sputter rate distributions, but is not yet accurately modeling the magnitudes. The modeling has been benchmarked to recent HERMeS wear testing, using multiple microbalance measurements. These recent measurements have yielded values, on the order of 1.5- 2 microns/khour.

Investigation of Corrosion Behavior of Ti/TiN Multilayers on Al7075 Deposited by High-Vacuum Magnetron Sputtering in 3.5% NaCl Solution

Science.gov (United States)

Molavi, Esfandiar; Shanaghi, Ali; Chu, Paul K.

2018-04-01

Although Al 7075 has many favorable mechanical properties such as the large strength-to-weight ratio, the relatively poor corrosion resistance has restricted industrial applications. In this work, Ti/TiN as hard multilayered and nanostructured coatings are deposited on the relatively soft Al 7075 structure by high-vacuum radio-frequency magnetron sputtering and the phase, structure, and morphology are investigated in details. The corrosion behavior is evaluated by electrochemical impedance spectroscopy in 3.5% NaCl at a pH of 7.5 for 1, 6, 12, 24, 36, 48, 60, and 72 h. At time points of 1, 6, 12, and 24 h, primary oxide layers and double layers are formed, but the corrosive medium penetrates the primary titanium nitride columnar structure. At longer time points of 24, 36, 48, 60, and 72 h, formation of stronger oxide and double layers leads to better corrosion resistance which is 14.8 times better than that observed from the uncoated substrate after immersion for 36 h. According to R ct, the corrosion resistances of the short and long immersion groups are 808.5-1984 and 808.5-1248 kΩ cm2, respectively, thereby confirming the effectiveness of the Ti/TiN coating against corrosion in comparison with the corrosion resistance of 84.3 kΩ cm2 observed from the uncoated Al 7075. The smallest corrosion resistance of 808.5 kΩ cm2 observed at the time point of 24 h is 9.6 times that of the uncoated substrate.

The use of polyimide foils to prevent contamination from self-sputtering of {sup 252}Cf deposits in high-accuracy fission counting

Energy Technology Data Exchange (ETDEWEB)

Gilliam, David M. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)], E-mail: david.gilliam@nist.gov; Yue, Andrew [Department of Physics and Astronomy, University of Tennessee, Knoxville, TN (United States); Scott Dewey, M. [National Institute of Standards and Technology, Gaithersburg, MD 20899 (United States)

2008-06-01

It is demonstrated that a thin polyimide foil can be employed to prevent contamination from the self-sputtering of a {sup 252}Cf source under vacuum, with small energy loss of the emitted fission fragments, with very small effect on the efficiency of counting the fission fragments, and with a long lifetime of the plastic foils.

High temperature superconducting films by rf magnetron sputtering

International Nuclear Information System (INIS)

Kadin, A.M.; Ballentine, P.H.

1989-01-01

The authors have produced sputtered films of Y-Ba-Cu-O and Bi-Sr-Ca-Cu-O by rf magnetron sputtering from an oxide target consisting of loose reacted powder. The use of a large 8-inch stoichiometric target in the magnetron mode permits films located above the central region to be free of negative-ion resputtering effects, and hence yields reproducible, uniform stoichiometric compositions for a wide range of substrate temperatures. Superconducting YBCO films have been obtained either by sputtering at low temperatures followed by an 850 0 C oxygen anneal, or alternatively by depositing onto substrates heated to ∼600 - 650 0 C and cooling in oxygen. Films prepared by the former method on cubic zirconia substrate consist of randomly oriented crystallites with zero resistance above 83 K. Those deposited on zirconia at medium temperatures without the high-temperature anneal contain smooth partially oriented crystallites, with a slightly depressed T/sub c/ ∼75K. Finally, superconducting films have been deposited on MgO using a BiSrCaCu/sub 2/O/sub x/ powder target

Discharge behavior of vacuum arc ion source working in pulse mode

International Nuclear Information System (INIS)

Tang Pingying; Dai Jingyi; Tan Xiaohua; Jin Dazhi; Liu Tie; Ding Bonan

2005-01-01

Discharge behavior of the vacuum arc ion source working in pulse mode was investigated using high-speed photography and spectrum diagnosis. The evolvement of cathode spot on hydrogen-impregnated electrode was captured by high-speed photography, and the emission spectra of cathode spot at different pulse currents were analyzed. The experimental results show that in most cases, only one cathode spot can be found in the discharge zone of vacuum arc ion source, and the spot moves a little during the same discharge. Temperature of the cathode spot may rise while the discharge current increases, and ultimately the density of hydrogen ion will be increased. At the same time, sputtering of the electrode is enhanced and the quality of ion plasma will be reduced. (authors)

Silicates materials of high vacuum technology

CERN Document Server

Espe, Werner

2013-01-01

Materials of High Vacuum Technology, Volume 2: Silicates covers silicate insulators of special importance to vacuum technology. The book discusses the manufacture, composition, and physical and chemical properties of technical glasses, quartz glass, quartzware, vycor glass, ceramic materials, mica, and asbestos.

Development of ion beam sputtering techniques for actinide target preparation

International Nuclear Information System (INIS)

Aaron, W.S.; Zevenbergen, L.A.; Adair, H.L.

1985-01-01

Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed. (orig.)

Development of ion beam sputtering techniques for actinide target preparation

Science.gov (United States)

Aaron, W. S.; Zevenbergen, L. A.; Adair, H. L.

1985-06-01

Ion beam sputtering is a routine method for the preparation of thin films used as targets because it allows the use of a minimum quantity of starting material, and losses are much lower than most other vacuum deposition techniques. Work is underway in the Isotope Research Materials Laboratory (IRML) at ORNL to develop the techniques that will make the preparation of actinide targets up to 100 μg/cm 2 by ion beam sputtering a routinely available service from IRML. The preparation of the actinide material in a form suitable for sputtering is a key to this technique, as is designing a sputtering system that allows the flexibility required for custom-ordered target production. At present, development work is being conducted on low-activity actinides in a bench-top system. The system will then be installed in a hood or glove box approved for radioactive materials handling where processing of radium, actinium, and plutonium isotopes among others will be performed.

Evolution of sputtered tungsten coatings at high temperature

Energy Technology Data Exchange (ETDEWEB)

Stelmakh, Veronika; Rinnerbauer, Veronika; Joannopoulos, John D.; Soljačić, Marin; Celanovic, Ivan; Senkevich, Jay J. [Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Tucker, Charles; Ives, Thomas; Shrader, Ronney [Materion Corporation, Buellton, California 93427 (United States)

2013-11-15

Sputtered tungsten (W) coatings were investigated as potential high temperature nanophotonic material to replace bulk refractory metal substrates. Of particular interest are materials and coatings for thermophotovoltaic high-temperature energy conversion applications. For such applications, high reflectance of the substrate in the infrared wavelength range is critical in order to reduce losses due to waste heat. Therefore, the reflectance of the sputtered W coatings was characterized and compared at different temperatures. In addition, the microstructural evolution of sputtered W coatings (1 and 5 μm thick) was investigated as a function of anneal temperature from room temperature to 1000 °C. Using in situ x-ray diffraction analysis, the microstrain in the two samples was quantified, ranging from 0.33% to 0.18% for the 1 μm sample and 0.26% to 0.20% for the 5 μm sample, decreasing as the temperature increased. The grain growth could not be as clearly quantified due to the dominating presence of microstrain in both samples but was in the order of 20 to 80 nm for the 1 μm sample and 50 to 100 nm for the 5 μm sample, as deposited. Finally, the 5 μm thick layer was found to be rougher than the 1 μm thick layer, with a lower reflectance at all wavelengths. However, after annealing the 5 μm sample at 900 °C for 1 h, its reflectance exceeded that of the 1 μm sample and approached that of bulk W found in literature. Overall, the results of this study suggest that thick coatings are a promising alternative to bulk substrates as a low cost, easily integrated platform for nanostructured devices for high-temperature applications, if the problem of delamination at high temperature can be overcome.

Observing Planets and Small Bodies in Sputtered High Energy Atom (SHEA) Fluxes

Science.gov (United States)

Milillo, A.; Orsini, S.; Hsieh, K. C.; Baragiola, R.; Fama, M.; Johnson, R.; Mura, A.; Plainaki, Ch.; Sarantos, M.; Cassidy, T. A.;

Modeling and analysis of surface roughness effects on sputtering, reflection, and sputtered particle transport

International Nuclear Information System (INIS)

Brooks, J.N.; Ruzic, D.N.

1990-01-01

The microstructure of the redeposited surface in tokamaks may affect sputtering and reflection properties and subsequent particle transport. This subject has been studied numerically using coupled models/codes for near-surface plasma particle kinetic transport (WBC code) and rough surface sputtering (fractal-TRIM). The coupled codes provide an overall Monte Carlo calculation of the sputtering cascade resulting from an initial flux of hydrogen ions. Beryllium, carbon, and tungsten surfaces are analyzed for typical high recycling, oblique magnetic field, divertor conditions. Significant variations in computed sputtering rates are found with surface roughness. Beryllium exhibits high D-T and self-sputtering coefficients for the plasma regime studied (T e = 30-75 eV). Carbon and tungsten sputtering is significantly lower. 9 refs., 6 figs., 1 tab

C60 ion sputtering of layered organic materials

International Nuclear Information System (INIS)

Shard, Alexander G.; Green, Felicia M.; Gilmore, Ian S.

2008-01-01

Two different organic materials, Irganox1010 and Irganox3114, were vacuum deposited as alternating layers. The layers of Irganox3114 were thin (∼2.5 nm) in comparison to the Irganox1010 (∼55 or ∼90 nm); we call these 'organic delta layers'. Both materials are shown to have identical sputtering yields and the alternating layers may be used to determine some of the important metrological parameters for cluster ion beam depth profiling of organic materials. The sputtering yield for C 60 ions is shown to diminish with ion dose. Comparison with atomic force microscopy data from films of pure Irganox1010, demonstrates that the depth resolution is limited by the development of topography. Secondary ion intensities are a well-behaved function of sputtering yield and may be employed to obtain useful analytical information. Organic delta layers are shown to be valuable reference materials for comparing the capabilities of different cluster ion sources and experimental arrangements for the depth profiling of organic materials.

Application of high power microwave vacuum electron devices

International Nuclear Information System (INIS)

Ding Yaogen; Liu Pukun; Zhang Zhaochuan; Wang Yong; Shen Bin

2011-01-01

High power microwave vacuum electron devices can work at high frequency, high peak and average power. They have been widely used in military and civil microwave electron systems, such as radar, communication,countermeasure, TV broadcast, particle accelerators, plasma heating devices of fusion, microwave sensing and microwave heating. In scientific research, high power microwave vacuum electron devices are used mainly on high energy particle accelerator and fusion research. The devices include high peak power klystron, CW and long pulse high power klystron, multi-beam klystron,and high power gyrotron. In national economy, high power microwave vacuum electron devices are used mainly on weather and navigation radar, medical and radiation accelerator, TV broadcast and communication system. The devices include high power pulse and CW klystron, extended interaction klystron, traveling wave tube (TWT), magnetron and induced output tube (IOT). The state of art, common technology problems and trends of high power microwave vacuum electron devices are introduced in this paper. (authors)

Sputtered thin films for high density tape recording

NARCIS (Netherlands)

Nguyen, L.T.

This thesis describes the investigation of sputtered thin film media for high density tape recording. As discussed in Chapter 1, to meet the tremendous demand of data storage, the density of recording tape has to be increased continuously. For further increasing the bit density the key factors are:

Sputtering yields of carbon based materials under high particle flux with low energy

Science.gov (United States)

Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

1995-04-01

A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 ˜ 7 × 10 20/m 2 s at 50 ˜ 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 ˜ 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam.

Sputtering yields of carbon based materials under high particle flux with low energy

International Nuclear Information System (INIS)

Nakamura, K.; Nagase, A.; Dairaku, M.; Akiba, M.; Araki, M.; Okumura, Y.

1995-01-01

A new ion source which can produce high particle flux beams at low energies has been developed. This paper presents preliminary results on the sputtering yield of the carbon fiber reinforced composites (CFCs) measured with the new ion source. The sputtering yields of 1D and 2D CFCs, which are candidate materials for the divertor armour tiles, have been measured by the weight loss method under the hydrogen and deuterium particle fluxes of 2 similar 7x10 20 /m 2 s at 50 similar 150 eV. Preferential sputtering of the matrix was observed on CFCs which included the matrix of 40 similar 60 w%. The energy dependence of the sputtering yields was weak. The sputtering yields of CFCs normally irradiated with deuterium beam were from 0.073 to 0.095, and were around three times larger than those with hydrogen beam. ((orig.))

Design and capabilities of an experimental setup based on magnetron sputtering for formation and deposition of size-selected metal clusters on ultra-clean surfaces

DEFF Research Database (Denmark)

Hartmann, Hannes; Popok, Vladimir; Barke, Ingo

2012-01-01

The design and performance of an experimental setup utilizing a magnetron sputtering source for production of beams of ionized size-selected clusters for deposition in ultra-high vacuum is described. For the case of copper cluster formation the influence of different source parameters is studied...

Protective coating of inner surface of steel tubes via vacuum arc deposition

Energy Technology Data Exchange (ETDEWEB)

Maile, K.; Roos, E.; Lyutovich, A.; Boese, J.; Itskov, M. [Stuttgart Univ. (DE). Materialpruefungsanstalt (MPA); Ashurov, Kh.; Mirkarimov, A.; Kazantsev, S.; Kadirov, Kh. [Uzbek Academy of Science, Tashkent (Uzbekistan). Arifov Inst. of Electronics

2010-07-01

The Vacuum Arc Deposition (VAD) technique based on sputtering a chosen electrode material and its deposition via plasma allows highly-productive technology for creating a wide class of protecting coatings on complex structures. In this work, VAD was applied as a method for the protection of the inner surface of tubes for power-plant boilers against steam oxidation. For this aim, a source cathode of an alloy with high chromium and nickel content was employed in two different VAD treatment systems: a horizontal vacuum chamber (MPA) and a vertical system where the work-piece of the tubes to be protected served as a vacuum changer (Arifov Institute of Electronics). Surface coating with variation of deposition parameters and layer thickness was performed. Characterisation of coated tubes has shown that the method realised in this work allows attainment of material transfer from the cathode to the inner surface with nearly equal chemical composition. It was demonstrated that the initial martensitic structure of the tubes was kept after the vacuum-arc treatment which can provide for both the high mechanical robustness and the corrosion-resistance of the final material. (orig.)

Plasma ``anti-assistance'' and ``self-assistance'' to high power impulse magnetron sputtering

Science.gov (United States)

Anders, André; Yushkov, Georgy Yu.

2009-04-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering.

Plasma 'anti-assistance' and 'self-assistance' to high power impulse magnetron sputtering

International Nuclear Information System (INIS)

Anders, Andre; Yushkov, Georgy Yu.

2009-01-01

A plasma assistance system was investigated with the goal to operate high power impulse magnetron sputtering (HiPIMS) at lower pressure than usual, thereby to enhance the utilization of the ballistic atoms and ions with high kinetic energy in the film growth process. Gas plasma flow from a constricted plasma source was aimed at the magnetron target. Contrary to initial expectations, such plasma assistance turned out to be contraproductive because it led to the extinction of the magnetron discharge. The effect can be explained by gas rarefaction. A better method of reducing the necessary gas pressure is operation at relatively high pulse repetition rates where the afterglow plasma of one pulse assists in the development of the next pulse. Here we show that this method, known from medium-frequency (MF) pulsed sputtering, is also very important at the much lower pulse repetition rates of HiPIMS. A minimum in the possible operational pressure is found in the frequency region between HiPIMS and MF pulsed sputtering

Low-damage high-throughput grazing-angle sputter deposition on graphene

Energy Technology Data Exchange (ETDEWEB)

Chen, C.-T.; Gajek, M.; Raoux, S. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Casu, E. A. [IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598 (United States); Politecnico di Torino, Turin 10129 (Italy)

2013-07-15

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Low-damage high-throughput grazing-angle sputter deposition on graphene

International Nuclear Information System (INIS)

Chen, C.-T.; Gajek, M.; Raoux, S.; Casu, E. A.

2013-01-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications

Low-damage high-throughput grazing-angle sputter deposition on graphene

Science.gov (United States)

Chen, C.-T.; Casu, E. A.; Gajek, M.; Raoux, S.

2013-07-01

Despite the prevalence of sputter deposition in the microelectronics industry, it has seen very limited applications for graphene electronics. In this letter, we report systematic investigation of the sputtering induced damages in graphene and identify the energetic sputtering gas neutrals as the primary cause of graphene disorder. We further demonstrate a grazing-incidence sputtering configuration that strongly suppresses fast neutral bombardment and retains graphene structure integrity, creating considerably lower damage than electron-beam evaporation. Such sputtering technique yields fully covered, smooth thin dielectric films, highlighting its potential for contact metals, gate oxides, and tunnel barriers fabrication in graphene device applications.

Geometric considerations in magnetron sputtering

International Nuclear Information System (INIS)

Thornton, J.A.

1982-01-01

The recent development of high performance magnetron type discharge sources has greatly enhaced the range of coating applications where sputtering is a viable deposition process. Magnetron sources can provide high current densities and sputtering rates, even at low pressures. They have much reduced substrate heating rates and can be scaled to large sizes. Magnetron sputter coating apparatuses can have a variety of geometric and plasma configurations. The target geometry affects the emission directions of both the sputtered atoms and the energetic ions which are neutralized and reflected at the cathode. This fact, coupled with the long mean free particle paths which are prevalent at low pressures, can make the coating properties very dependent on the apparatus geometry. This paper reviews the physics of magnetron operation and discusses the influences of apparatus geometry on the use of magnetrons for rf sputtering and reactive sputtering, as well as on the microstructure and internal stresses in sputtered metallic coatings. (author) [pt

Ultra-high vacuum technology for accelerators

CERN Multimedia

CERN. Geneva. Audiovisual Unit; Hilleret, Noël; Strubin, Pierre M

2002-01-01

The lectures will start with a review of the basics of vacuum physics required to build Ultra High Vacuum (UHV) systems, such as static and dynamic outgassing. Before reviewing the various pumping and measurement devices, including the most modern one like Non Evaporable Getter (NEG) coatings, an overview of adequate materials to be used in UHV systems will be given together with their treatment (e.g. cleaning procedures and bake out). Practical examples based on existing or future accelerators will be used to illustrate the topics. Finally, a short overview of modern vacuum controls and interlocks will be given.

Modelling vacuum arcs : from plasma initiation to surface interactions

International Nuclear Information System (INIS)

Timko, H.

2011-01-01

A better understanding of vacuum arcs is desirable in many of today's 'big science' projects including linear colliders, fusion devices, and satellite systems. For the Compact Linear Collider (CLIC) design, radio-frequency (RF) breakdowns occurring in accelerating cavities influence efficiency optimisation and cost reduction issues. Studying vacuum arcs both theoretically as well as experimentally under well-defined and reproducible direct-current (DC) conditions is the first step towards exploring RF breakdowns. In this thesis, we have studied Cu DC vacuum arcs with a combination of experiments, a particle-in-cell (PIC) model of the arc plasma, and molecular dynamics (MD) simulations of the subsequent surface damaging mechanism. We have also developed the 2D Arc-PIC code and the physics model incorporated in it, especially for the purpose of modelling the plasma initiation in vacuum arcs. Assuming the presence of a field emitter at the cathode initially, we have identified the conditions for plasma formation and have studied the transitions from field emission stage to a fully developed arc. The 'footing' of the plasma is the cathode spot that supplies the arc continuously with particles; the high-density core of the plasma is located above this cathode spot. Our results have shown that once an arc plasma is initiated, and as long as energy is available, the arc is self-maintaining due to the plasma sheath that ensures enhanced field emission and sputtering.The plasma model can already give an estimate on how the time-to-breakdown changes with the neutral evaporation rate, which is yet to be determined by atomistic simulations. Due to the non-linearity of the problem, we have also performed a code-to-code comparison. The reproducibility of plasma behaviour and time-to-breakdown with independent codes increased confidence in the results presented here. Our MD simulations identified high-flux, high-energy ion bombardment as a possible mechanism forming the early

Application of high rate magnetron sputtering to the fabrication of A-15 compounds

International Nuclear Information System (INIS)

Kampwirth, R.T.; Hafstrom, J.W.; Wu, C.T.

1976-01-01

High quality Nb 3 Sn films have been fabricated using a recently developed magnetron sputtering process capable of deposition rates approaching 1 μm/min. at sputtering voltages less than 500 V and power levels of about 5 KW. Low sputtering voltages allow more complete thermalization at lower pressures of the material condensing on the substrate which can improve long range order. Transition temperatures of up to 18.3 0 K, J/sub c/(O)'s of 15 x 10 6 A/cm 2 and Hc 2 as high as 240 kOe have been achieved in 1-3 μm films deposited from a Nb 3 Sn reacted powder target with substrate temperatures between 600 and 800 0 C. The films exhibit smooth surfaces and, generally, a [200] preferred orientation. The growth of the film is columnar in nature. The sputtering parameters, substrate material and temperature will be related to film structure T/sub c/ and J/sub c/(H,T) and the Nb/Sn ratio as determined by Rutherford backscattering

Modeling of the anode surface deformation in high-current vacuum arcs with AMF contacts

International Nuclear Information System (INIS)

Huang, Xiaolong; Wang, Lijun; Deng, Jie; Jia, Shenli; Qin, Kang; Shi, Zongqian

2016-01-01

A high-current vacuum arc subjected to an axial magnetic field is maintained in a diffuse status. With an increase in arc current, the energy carried by the arc column to the anode becomes larger and finally leads to the anode temperature exceeding the melting point of the anode material. When the anode melting pool is formed, and the rotational plasma of the arc column delivers its momentum to the melting pool, the anode melting pool starts to rotate and also flow outwards along the radial direction, which has been photographed by some researchers using high-speed cameras. In this paper, the anode temperature and melting status is calculated using the melting and solidification model. The swirl flow of the anode melting pool and deformation of the anode is calculated using the magneto-hydrodynamic (MHD) model with the volume of fraction (VOF) method. All the models are transient 2D axial-rotational symmetric models. The influence of the impaction force of the arc plasma, electromagnetic force, viscosity force, and surface tension of the liquid metal are all considered in the model. The heat flux density injected into the anode and the arc pressure are obtained from the 3D numerical simulation of the high-current vacuum arc using the MHD model, which gives more realistic parameters for the anode simulation. Simulation results show that the depth of the anode melting pool increases with an increase in the arc current. Some droplets sputter out from the anode surface, which is caused by the inertial centrifugal force of the rotational melting pool and strong plasma pressure. Compared with the previous anode melting model without consideration of anode deformation, when the deformation and swirl flow of the anode melting pool are considered, the anode temperature is relatively lower, and just a little more than the melting point of Cu. This is because of liquid droplets sputtering out of the anode surface taking much of the energy away from the anode surface. The

High-vacuum plasma pump

International Nuclear Information System (INIS)

Dorodnov, A.M.; Minajchev, V.E.; Miroshkin, S.I.

1980-01-01

The action of an electric-arc high-vacuum pump intended for evacuating the volumes in which the operation processes are followed by a high gas evolution is considered. The operation of the pump is based on the principle of controlling the getter feed according to the gas load and effect of plasma sorbtion pumping. The pump performances are given. The starting pressure is about 5 Pa, the limiting residual pressure is about 5x10 -6 Pa, the pumping out rate of nitrogen in the pressure range 5x10 -5 -5x10 -3 Pa accounts for about 4000 l/s, the power consumption comes to 6 kW. Analyzing the results of the test operation of the pump, it has been concluded that its principal advantages are the high starting pressure, controlled getter feed rate and possibility of pumping out the gases which are usually pumped out with difficulty. The operation reliability of the pump is defined mainly by reliable operation of the ignition system of the vacuum arc [ru

Electrical properties of vacuum-annealed titanium-doped indium oxide films

NARCIS (Netherlands)

Yan, L.T.; Rath, J.K.; Schropp, R.E.I.

2011-01-01

Titanium-doped indium oxide (ITiO) films were deposited on Corning glass 2000 substrates at room temperature by radio frequency magnetron sputtering followed by vacuum post-annealing. With increasing deposition power, the as-deposited films showed an increasingly crystalline nature. As-deposited

Procurement specification high vacuum test chamber and pumping system

International Nuclear Information System (INIS)

1976-01-01

The specification establishes requirements for a high-vacuum test chamber, associated vacuum pumps, valves, controls, and instrumentation that shall be designed and fabricated for use as a test chamber for testing a closed loop Brayton Isotope Power System (BIPS) Ground Demonstration System (GDS). The vacuum system shall include all instrumentation required for pressure measurement and control of the vacuum pumping system. A general outline of the BIPS-GDS in the vacuum chamber and the preliminary piping and instrumentation interface to the vacuum chamber are shown

Effects of vacuum annealing on the optical and electrical properties of p-type copper-oxide thin-film transistors

International Nuclear Information System (INIS)

Sohn, Joonsung; Song, Sang-Hun; Kwon, Hyuck-In; Nam, Dong-Woo; Cho, In-Tak; Lee, Jong-Ho; Cho, Eou-Sik

2013-01-01

We have investigated the effects of vacuum annealing on the optical and electrical properties of the p-type copper-oxide thin-film transistors (TFTs). The vacuum annealing of the copper-oxide thin-film was performed using the RF magnetron sputter at various temperatures. From the x-ray diffraction and UV-vis spectroscopy, it is demonstrated that the high-temperature vacuum annealing reduces the copper-oxide phase from CuO to Cu 2 O, and increases the optical transmittance in the visible part of the spectrum. The fabricated copper-oxide TFT does not exhibit the switching behavior under low-temperature vacuum annealing conditions. However, as the annealing temperature increases, the drain current begins to be modulated by a gate voltage, and the TFT exhibits a high current on–off ratio over 10 4 as the vacuum annealing temperature increases over 450 °C. These results show that the vacuum annealing process can be an effective method of simultaneously improving the optical and electrical performances in p-type copper-oxide TFTs. (paper)

Depth Profiling Analysis of Aluminum Oxidation During Film Deposition in a Conventional High Vacuum System

Science.gov (United States)

Kim, Jongmin; Weimer, Jeffrey J.; Zukic, Muamer; Torr, Douglas G.

1994-01-01

The oxidation of aluminum thin films deposited in a conventional high vacuum chamber has been investigated using x-ray photoelectron spectroscopy (XPS) and depth profiling. The state of the Al layer was preserved by coating it with a protective MgF2 layer in the deposition chamber. Oxygen concentrations in the film layers were determined as a function of sputter time (depth into the film). The results show that an oxidized layer is formed at the start of Al deposition and that a less extensively oxidized Al layer is deposited if the deposition rate is fast. The top surface of the Al layer oxidizes very quickly. This top oxidized layer may be thicker than has been previously reported by optical methods. Maximum oxygen concentrations measured by XPS at each Al interface are related to pressure to rate ratios determined during the Al layer deposition.

High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

International Nuclear Information System (INIS)

Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

1982-01-01

Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H 2 of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H 2 in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H 2 increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H 2 mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H 2 atmosphere in the same apparatus. (author)

Kinetic and Potential Sputtering of Lunar Regolith: The Contribution of the Heavy Highly Charged (Minority) Solar Wind Ions

Science.gov (United States)

Meyer, F. W.; Barghouty, A. F.

2012-01-01

Solar wind sputtering of the lunar surface helps determine the composition of the lunar exosphere and contributes to surface weathering. To date, only the effects of the two dominant solar wind constituents, H+ and He+, have been considered. The heavier, less abundant solar wind constituents have much larger sputtering yields because they have greater mass (kinetic sputtering) and they are highly charged (potential sputtering) Their contribution to total sputtering can therefore be orders of magnitude larger than their relative abundances would suggest

Contribution to the study of sputtering and damage of uranium dioxide by fast heavy ions

International Nuclear Information System (INIS)

Schlutig, S.

2001-03-01

Swift heavy ion-solid interaction leads in volume to track creation and on the surface to the ejection of particles into the vacuum. To learn more about initial mechanisms of track formation, we are focused on the sputtering of uranium dioxide by fast heavy ions. This present study is exclusively devoted to the influence of the electronic stopping power on the emission of neutral particles and especially on their angular distribution. These measurements are completed by those of the ions emitted from UO 2 targets bombarded with swift heavy ions. The whole experimental results give access to: i) the nature of the sputtered particles; ii) the charge state of the emitted particles; iii) the direction of ejection of the sputtered particles ; iv) the sputtering yields deduced from the angular distributions. These results are compared to the prediction of the sputtering models proposed in the literature and it seems that the supersonic gas flow model is well suited to describe our results. Finally, the sputtering yields are compared with a set of earlier experimental data on uranium dioxide damage obtained by T. Wiss and we observe that only a small fraction of UO 2 monolayers are sputtered. (author)

Multilayered nanostructured coverings generated by a method of ion beam sputtering in vacuum

International Nuclear Information System (INIS)

Il'yushenko, A.F.; Andreev, M.A.; Markova, L.V.; Lisovskaya, Yu. O.

2013-01-01

Technological process of the formation of multilayered coverings by ion -beam sputtering is developed. At research of samples by method of AFM it is established, that the heating of a substrate leads to formation of rather large grains up to 100 nanometers in size, consisting of dispersed subgrains in the size 10-25 nanometers. The obtained results allow to say that in the course of formation of coverings interphase borders of section in one layer and section border between coat layers are formed. The use of a method of Electron Backscatter Diffraction Analysis (EBSD) has helped to confirm that the at ion-beam sputtering, ultrafine diamonds remain their diamond-like structure when migrating to the surface of the coating. It is found that with increasing number of monolayers coating microhardness increases. However, this relationship is described by a nonlinear and exponential model. (authors)

A transparent vacuum window for high-intensity pulsed beams

CERN Document Server

Monteil, M; Veness, R

2011-01-01

The HiRadMat (High-Radiation to Materials) facility Ill will allow testing of accelerator components, in particular those of the Large Hadron Collider (LHC) at CERN, under the impact of high-intensity pulsed beams. To reach this intensity range, the beam will be focused on a focal point where the target to be tested is located. A 60 mm aperture vacuum window will separate the vacuum of the beam line which is kept under high vacuum 10(-8) mbar, from the test area which is at atmospheric pressure. This window has to resist collapse due to beam passage. The high-intensity of the beam means that typical materials used for standard vacuum windows (such as stainless steel, aluminium and titanium alloy) cannot endure the energy deposition induced by the beam passage. Therefore, a vacuum window has been designed to maintain the differential pressure whilst resisting collapse due to the beam impact on the window. In this paper, we will present calculations of the energy transfer from beam to window, the design of the ...

The vacuum interlock system for the CELSIUS ring

International Nuclear Information System (INIS)

Gajewski, K.

1990-01-01

A vacuum interlock system has been designed and built for the CELSIUS storage ring. The ultrahigh-vacuum system of CELSIUS has a design pressure of 10 -11 mbar. This is achieved by using vacuum-fired stainless-steel chambers, baking the whole ring to 300degC and running some 50 sputter ion and titanium sublimation pumps. The turbopumps, combined with roughing pumps, are used during the pump-down and the bake-out. The pressure is monitored by Penning vacuum gauges. There is a number of programmable pressure thresholds set to trigger various events (like closing the sector valves, disabling the bake-out, etc.). The interlock system is based on the Mitsubishi programmable logic controller (PLC). An IBM PC is used as an operator's console. The operation and performance of the system is described. On the basis of present experience an upgrading of the system is suggested. (orig.)

High photoconductive hydrogenated silicon by reactive sputtering in helium containing atmosphere

Energy Technology Data Exchange (ETDEWEB)

Ohbiki, Tohru; Imura, Takeshi; Hiraki, Akio

1982-08-01

Mixed phase of amorphous and microcrystalline silicon-hydrogen alloys has been fabricated by reactive sputtering in He containing H/sub 2/ of which mole fraction is less than about 5 mole%. The degree of the crystallization, evaluated by electron microscopy and optical absorption spectroscopy, becomes high as the amount of H/sub 2/ in the atmosphere increases. The conductivity in dark and photoconductivity increase as the partial pressure of H/sub 2/ increases (form 0 to 1 mole%) and also as the pressure during sputtering increases. This increase in conductivity and photoconductivity is supposed to be related to the development of microcrystals. The highest photoconductivity is observed at the H/sub 2/ mole fraction of about 1 mole%. This film contains a small amount of microcrystals and show the photoconductivity higher by 2 orders of magnitude than that in a film sputter-deposited in Ar and H/sub 2/ atmosphere in the same apparatus.

Modification of Ultra-High Vacuum Surfaces Using Free Radicals

CERN Document Server

Vorlaufer, G

2002-01-01

In ultra-high vacuum systems outgassing from vacuum chamber walls and desorption of surface adsorbates are usually the factors which determine pressure and residual gas composition. In particular in beam vacuum systems of accelerators like the LHC, where surfaces are exposed to intense synchrotron radiation and bombardment by energetic ions and electrons, surface properties like the molecular desorption yield or secondary electron yield can strongly influence the performance of the accelerator. Well-established treatment methods like vacuum bake-out or glow-discharge cleaning have been successfully applied in the past to condition ultra-high vacuum surfaces, but these methods are sometimes difficult to carry out, for example if the vacuum chambers are not accessible. In this work, an alternative treatment method is investigated. This method is based on the strong chemical reactivity of free radicals, electrically neutral fragments of molecules. Free radicals (in the case of this work, nitrogen and oxygen radi...

Deuterium sputtering of Li and Li-O films

Science.gov (United States)

Nelson, Andrew; Buzi, Luxherta; Kaita, Robert; Koel, Bruce

2017-10-01

Lithium wall coatings have been shown to enhance the operational plasma performance of many fusion devices, including NSTX and other tokamaks, by reducing the global wall recycling coefficient. However, pure lithium surfaces are extremely difficult to maintain in experimental fusion devices due to both inevitable oxidation and codeposition from sputtering of hot plasma facing components. Sputtering of thin lithium and lithium oxide films on a molybdenum target by energetic deuterium ion bombardment was studied in laboratory experiments conducted in a surface science apparatus. A Colutron ion source was used to produce a monoenergetic, mass-selected ion beam. Measurements were made under ultrahigh vacuum conditions as a function of surface temperature (90-520 K) using x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD). Results are compared with computer simulations conducted on a temperature-dependent data-calibrated (TRIM) model.

Vacuum deposition and pulsed modification of Ge thin films on Si. Structure and photoluminescence

International Nuclear Information System (INIS)

Batalov, R.I.; Bayazitov, R.M.; Novikov, G.A.; Shustov, V.A.; Bizyaev, D.A.; Gajduk, P.I.; Ivlev, G.D.; Prokop'ev, S.L.

2013-01-01

Vacuum deposition of Ge thin films onto Si substrates by magnetron sputtering was studied. During deposition sputtering time and substrate temperature were varied. Nanosecond pulsed annealing of deposited films by powerful laser or ion beams was performed. The dependence of the structure and optical properties of Ge/Si films on parameters of pulsed treatments was investigated. Optimum parameters of deposition and pulsed treatments resulting into light emitting monocrystalline Ge/Si layers are determined. (authors)

Evaluation tests of industrial vacuum bearings for space use

Science.gov (United States)

Obara, S.; Sasaki, A.; Haraguchi, M.; Imagawa, K.; Nishimura, M.; Kawashima, N.

2001-09-01

Tribological performance of industrial vacuum bearings was experimentally evaluated for space use. The bearings selected for investigation were an 8 mm bore-sized deep-groove ball bearing lubricated with a sputtered MoS2 film and that lubricated with an ion-plated Ag film, commercially delivered from three Japanese domestic bearing-manufacturers. Based on survey results of tribological requirements for the existing satellite mechanisms, four types of bearing tests were defined and conducted: a vacuum test at room temperature, an atmosphere-resistant test, a thermal vacuum test and a vibration test. In addition to these tests, variation in tribological performance of the industrial bearings was also investigated. The results of more than eighty tests demonstrated that the industrial vacuum bearings had sufficient lubrication lives with low frictional torque and their data were reasonably repeatable, indicating very good potentiality for space use.

Investigation of nanoporous platinum thin films fabricated by reactive sputtering: Application as micro-SOFC electrode

Science.gov (United States)

Jung, WooChul; Kim, Jae Jin; Tuller, Harry L.

2015-02-01

Highly porous Pt thin films, with nano-scale porosity, were fabricated by reactive sputtering. The strategy involved deposition of thin film PtOx at room temperature, followed by the subsequent decomposition of the oxide by rapid heat treatment. The resulting films exhibited percolating Pt networks infiltrated with interconnected nanosized pores, critical for superior solid oxide fuel cell cathode performance. This approach is particularly attractive for micro-fabricated solid oxide fuel cells, since it enables fabrication of the entire cell stack (anode/electrolyte/cathode) within the sputtering chamber, without breaking vacuum. In this work, the morphological, crystallographic and chemical properties of the porous electrode were systematically varied by control of deposition conditions. Oxygen reduction reaction kinetics were investigated by means of electrochemical impedance spectroscopy, demonstrating the critical role of nano-pores in achieving satisfactory micro-SOFC cathode performance.

Growth of Ge/Si(100) Nanostructures by Radio-Frequency Magnetron Sputtering: the Role of Annealing Temperature

Institute of Scientific and Technical Information of China (English)

ALIREZA Samavati; S. K. Ghoshal; Z. Othaman

2012-01-01

Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined.Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃,700℃ and 800℃ for 2 min at nitrogen ambient pressure.Atomic force microscopy,field emission scanning electron microscopy,visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed.The results for the annealing temperature-dependent sample morphology and the optical properties are presented.The density,size and roughness are found to be strongly influenced by the annealing temperature.A red shift of ～0.29 eV in the PL peak is observed with increasing annealing temperature.%Surface morphologies of Ge islands deposited on Si(100) substrates are characterized and their optical properties determined. Samples are prepared by rf magnetron sputtering in a high-vacuum chamber and are annealed at 600℃, 700℃ and 800℃ for 2 min at nitrogen ambient pressure. Atomic force microscopy, field emission scanning electron microscopy, visible photoluminescence (PL) and energy dispersive x-ray spectroscopy are employed. The results for the annealing temperature-dependent sample morphology and the optical properties are presented. The density, size and roughness are found to be strongly influenced by the annealing temperature. A red shift of ~0.29 eV in the PL peak is observed with increasing annealing temperature.

High-coercivity FePt sputtered films

International Nuclear Information System (INIS)

Luong, N.H.; Hiep, V.V.; Hong, D.M.; Chau, N.; Linh, N.D.; Kurisu, M.; Anh, D.T.K.; Nakamoto, G.

2005-01-01

Fe 56 Pt 44 thin films have been prepared by RF magnetron sputtering on Si substrates. The substrate temperature was kept at 350 deg C. The X-ray diffraction patterns of as-deposited FePt films exhibited a disordered structure. Annealing of the films at 650-685 deg C for 1 h yielded an ordered L1 0 phase with FCT structure. The high value for coercivity H C of 17 kOe was obtained at room temperature for the 68 nm thick film annealed at 685 deg C. The hard magnetic properties as well as grain structure of the films strongly depend on the annealing conditions

Temperature Dependence on Structural, Tribological, and Electrical Properties of Sputtered Conductive Carbon Thin Films

International Nuclear Information System (INIS)

Park, Yong Seob; Hong, Byung You; Cho, Sang Jin; Boo, Jin Hyo

2011-01-01

Conductive carbon films were prepared at room temperature by unbalanced magnetron sputtering (UBMS) on silicon substrates using argon (Ar) gas, and the effects of post-annealing temperature on the structural, tribological, and electrical properties of carbon films were investigated. Films were annealed at temperatures ranging from 400 .deg. C to 700 .deg. C in increments of 100 .deg. C using a rapid thermal annealing method by vacuum furnace in vacuum ambient. The increase of annealing temperature contributed to the increase of the ordering and formation of aromatic rings in the carbon film. Consequently, with increasing annealing temperature the tribological properties of sputtered carbon films are deteriorated while the resistivity of carbon films significantly decreased from 4.5 x 10 -3 to 1.0 x 10 -6 Ω-cm and carrier concentration as well as mobility increased, respectively. This behavior can be explained by the increase of sp 2 bonding fraction and ordering sp 2 clusters in the carbon networks caused by increasing annealing temperature

HIGH PRODUCTIVITY VACUUM BLASTING SYSTEM

International Nuclear Information System (INIS)

McPhee, William S.

2001-01-01

The Department of Energy (DOE) needs improved technologies to decontaminate large areas of both concrete and steel surfaces. The technology should have high operational efficiency, minimize exposures to workers, and produce low levels of secondary waste. In order to meet the DOE's needs, an applied research and development project for the improvement of a current decontamination technology, Vacuum Blasting, is proposed. The objective of this project is to improve the productivity and lower the expense of the existing vacuum blasting technology which has been widely used in DOE sites for removing radioactive contamination, PCBs, and lead-based paint. The proposed work would increase the productivity rate and provide safe and cost-effective decontamination of the DOE sites

Development of high pressure-high vacuum-high conductance piston valve for gas-filled radiation detectors

International Nuclear Information System (INIS)

Prasad, D N; Ayyappan, R; Kamble, L P; Singh, J P; Muralikrishna, L V; Alex, M; Balagi, V; Mukhopadhyay, P K

2008-01-01

Gas-filled radiation detectors need gas filling at pressures that range from few cms of mercury to as high as 25kg/cm 2 at room temperature. Before gas-filling these detectors require evacuation to a vacuum of the order of ∼1 x 10 -5 mbar. For these operations of evacuation and gas filling a system consisting of a vacuum pump with a high vacuum gauge, gas cylinder with a pressure gauge and a valve is used. The valve has to meet the three requirements of compatibility with high-pressure and high vacuum and high conductance. A piston valve suitable for the evacuation and gas filling of radiation detectors has been designed and fabricated to meet the above requirements. The stainless steel body (80mmx160mm overall dimensions) valve with a piston arrangement has a 1/2 inch inlet/outlet opening, neoprene/viton O-ring at piston face and diameter for sealing and a knob for opening and closing the valve. The piston movement mechanism is designed to have minimum wear of sealing O-rings. The valve has been hydrostatic pressure tested up to 75bars and has Helium leak rate of less than 9.6x10 -9 m bar ltr/sec in vacuum mode and 2x10 -7 mbar ltr/sec in pressure mode. As compared to a commercial diaphragm valve, which needed 3 hours to evacuate a 7 litre chamber to 2.5x10 -5 mbar, the new valve achieved vacuum 7.4x10 -6 mbar in the same time under the same conditions

A review of basic phenomena and techniques for sputter-deposition of high temperature superconducting films

Energy Technology Data Exchange (ETDEWEB)

Auciello, O. (Microelectronics Center of North Carolina, Research Triangle Park, NC (USA) North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Ameen, M.S.; Kingon, A.I.; Lichtenwalner, D.J. (North Carolina State Univ., Raleigh, NC (USA). Dept. of Materials Science and Engineering); Krauss, A.R. (Argonne National Lab., IL (USA))

1990-01-01

The processes involved in plasma and ion beam sputter-deposition of high temperature superconducting thin films are critically reviewed. Recent advances in the development of these techniques are discussed in relation to basic physical phenomena, specific to each technique, which must be understood before high quality films can be produced. Control of film composition is a major issue in sputter-deposition of multicomponent materials. Low temperature processing of films is a common goal for each technique, particularly in relation to integrating high temperature superconducting films with the current microelectronics technology. It has been understood for some time that for Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} deposition, the most intensely studied high-{Tc} compound, incorporation of sufficient oxygen into the film during deposition is necessary to produce as-deposited superconducting films at relatively substrate temperatures. Recent results have shown that with the use of suitable buffer layers, high quality Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} sputtered films can be obtained on Si substrates without the need for post-deposition anneal processing. This review is mainly focussed on issues related to sputter-deposition of Y{sub 1}Ba{sub 2}Cu{sub 3}O{sub 7} thin films, although representative results concerning the bismuth and thallium based compounds are included. 143 refs., 11 figs.

Vacuum-integrated electrospray deposition for highly reliable polymer thin film.

Science.gov (United States)

Park, Soohyung; Lee, Younjoo; Yi, Yeonjin

2012-10-01

Vacuum electrospray deposition (ESD) equipment was designed to prepare polymer thin films. The polymer solution can be injected directly into vacuum system through multi-stage pumping line, so that the solvent residues and ambient contaminants are highly reduced. To test the performance of ESD system, we fabricated organic photovoltaic cells (OPVCs) by injecting polymer solution directly onto the substrate inside a high vacuum chamber. The OPVC fabricated has the structure of Al∕P3HT:PCBM∕PEDOT:PSS∕ITO and was optimized by varying the speed of solution injection and concentration of the solution. The power conversion efficiency (PCE) of the optimized OPVC is 3.14% under AM 1.5G irradiation without any buffer layer at the cathode side. To test the advantages of the vacuum ESD, we exposed the device to atmosphere between the deposition steps of the active layer and cathode. This showed that the PCE of the vacuum processed device is 24% higher than that of the air exposed device and confirms the advantages of the vacuum prepared polymer film for high performance devices.

Grain size stabilization of tetragonal phase of zirconia in sputtered Zr-O cermet films

International Nuclear Information System (INIS)

Hadavi, M. S.; Keshmiri, H.; Kompany, A.; Zhang, Q. C.

2005-01-01

In this research, thin films of Zr/ZrO 2 composites were deposited by reactive magnetron sputtering technique on Si and fused Silica substrates, and their structures were investigated by x-ray diffraction method. During the deposition of the cermet layers, a Zr metallic target was sputtered in a gas mixture of Ar and O 2 . By controlling of O 2 flow rate, the different metal volume fractions in the cermet layers were achieved. The optical response of the samples was studied using spectroscopy methods. Also the effect of vacuum annealing on the structures and the optical properties were studies. x-ray diffraction results indicated that the prepared samples were amorphous and vacuum annealing induced crystallization in the cermet films. This research also show that without doping, the tetragonal phase of Zirconia can be stabilized at a temperature lower than the normal transition temperature. This is g rain size stabilization a nd relates to the small size of the crystallizes. In order to study the electron diffraction in the selected area patterns, the samples were analysed by a high-resolution transmission microscope. The selected area patterns results showed that all of the as prepared samples were amorphous showing evidence of very small Zr crystallites immersed in a dielectric medium. The Sad results are in close agreement with those obtained by x-ray diffraction analysis

Grain size stabilization of tetragonal phase of zirconia in sputtered Zr- O cermet films

Directory of Open Access Journals (Sweden)

M. S. Hadavi

2005-06-01

Full Text Available  In this research, thin films of Zr/ZrO2 composites were deposited by reactive magnetron sputtering technique on Si and fused Silica substrates, and their structures were investigated by XRD method. During the deposition of the cermet layers, a Zr metallic target was sputtered in a gas mixture of Ar and O2. By controlling of O2 flow rate, the different metal volume fractions in the cermet layers were achieved. The optical response of the samples was studied using spectroscopy methods. Also the effect of vacuum annealing on the structures and the optical properties were studied. XRD results indicated that the prepared samples were amorphous and vacuum annealing induced crystallization in the cermet films. This research also showed that without doping, the tetragonal phase of zirconia can be stabilized at a temperature lower than the normal transition temperature. This is “grain size stabilization” and relates to the small size of the crystallites. In order to study the electron diffraction in the selected area patterns (SAD, the samples were analyzed by a high-resolution transmission microscope. The SAD results showed that all of the as prepared samples were amorphous showing evidence of very small Zr crystallites immersed in a dielectric medium.The SAD results are in close agreement with those obtained by XRD analysis.

Construction of sputtering system and preparation of high temperature superconducting thin films

International Nuclear Information System (INIS)

Kaynak, E.

2000-01-01

The preparation of high T c superconducting thin film is important both for the understanding of fundamental behaviours of these materials and for the investigations on the usefulness of technological applications. High quality thin films can be prepared by various kinds of techniques being used today. Among these, sputtering is the most preferred one. The primary aim of this work is the construction of a r. f. and c. magnetron sputtering system. For this goal, a magnetron sputtering system was designed and constructed having powers up to 500W (r.f.) and 1KW (d.c.) that enables to deposit thin films of various kinds of materials: metals, ceramics and magnetic materials. The temperature dependence of the electrical resistance of the films was investigated by using four-point probe method. The zero resistance and the transition with of the films were measured as 80-85 K, and 2-9 K, respectively. The A.C. susceptibility experiments were done by utilising the system that was designed and constructed. The applied field dependence of the real and imaginary components of the susceptibility that were measured between the 77-120 K temperature interval and at a fixed frequency was investigated

Chemical sputtering of graphite by H+ ions

International Nuclear Information System (INIS)

Busharov, N.P.; Gorbatov, E.A.; Gusev, V.M.; Guseva, M.I.; Martynenko, Y.V.

1976-01-01

In a study of the sputtering coefficient S for the sputtering of graphite by 10-keV H + ions as a function of the graphite temperature during the bombardment, it is found that at T> or =750degreeC the coefficient S is independent of the target temperature and has an anomalously high value, S=0.085 atom/ion. The high rate of sputtering of graphite by atomic hydrogen ions is shown to be due to chemical sputtering of the graphite, resulting primarily in the formation of CH 4 molecules. At T=1100degreeC, S falls off by a factor of about 3. A model for the chemical sputtering of graphite is proposed

High Vacuum Techniques for Anionic Polymerization

KAUST Repository

Ratkanthwar, Kedar; Hadjichristidis, Nikolaos; Mays, Jimmy

2015-01-01

Anionic polymerization high vacuum techniques (HVTs) are the most suitable for the preparation of polymer samples with well-defined complex macromolecular architectures. Though HVTs require glassblowing skill for designing and making polymerization

Atomistic self-sputtering mechanisms of rf breakdown in high-gradient linacs

International Nuclear Information System (INIS)

Insepov, Z.; Norem, J.; Veitzer, S.

2010-01-01

Molecular dynamics (MD) models of sputtering solid and liquid surfaces - including the surfaces charged by interaction with plasma, Coulomb explosion, and Taylor cone formation - were developed. MD simulations of self-sputtering of a crystalline (1 0 0) copper surface by Cu + ions in a wide range of ion energies (50 eV-50 keV) were performed. In order to accommodate energetic ion impacts on a target, a computational model was developed that utilizes MD to simulate rapid atomic collisions in the central impact zone, and a finite-difference method to absorb the energy and shock wave for the collisional processes occurring at a longer time scales. The sputtering yield increases if the surface temperature rises and the surface melts as a result of heat from plasma. Electrostatic charging of the surface under bombardment with plasma ions is another mechanism that can dramatically increase the sputtering yield because it reduces the surface binding energy and the surface tension. An MD model of Taylor cone formation at a sharp tip placed in a high electric field was developed, and the model was used to simulate Taylor cone formation for the first time. Good agreement was obtained between the calculated Taylor cone angle (104.3 deg.) and the experimental one (98.6 deg.). A Coulomb explosion (CE) was proposed as the main surface failure mechanism triggering breakdown, and the dynamics of CE was studied by MD.

UHV testing of upgraded vacuum chambers for Indus-1

International Nuclear Information System (INIS)

Sindal, B.K.; Kumar, K.V.A.N.P.S.; Ramshiroman; Bhange, Nilesh; Yadav, D.P.; Sridhar, R.; Shukla, S.K.

2013-01-01

Indus-1 is a 450 MeV, 100 mA dedicated electron storage ring operating at pressure 10 -10 mbar range without beam and 10 -9 mbar range with beam using triode sputter ion pump (SIP) and titanium sublimation pump (TSP) combination. Indus-1 storage ring is presently working with six operational beam lines installed at three bending magnets. To accommodate two more beam lines and to reduce number of demountable joints, up-gradation of Indus-1 UHV system was planned. Salient features of upgraded vacuum system are bending magnet vacuum chambers with one extra port for additional beam line and straight section vacuum chambers with integrated TSP body. Half of the Indus-1 storage ring vacuum envelope with two bending magnet vacuum chamber and six straight section vacuum chambers were assembled with pumps, gauges etc, leak tested and tested for its UHV performance. Ultimate vacuum 5x10 -10 mbar with SIP and 2x10 -10 mbar after TSP pumping were achieved. Residual gas analyser (RGA) spectrum recorded for residual gas analysis indicated the imprints of a typical all metal UHV system having H 2 as major gas. This paper describes UHV testing of upgraded, newly fabricated vacuum chambers for Indus-1 storage ring. (author)

Reactive dual magnetron sputtering for large area application

International Nuclear Information System (INIS)

Struempfel, J.

2002-01-01

Production lines for large area coating demand high productivity of reactive magnetron sputtering processes. Increased dynamic deposition rates for oxides and nitrides were already obtained by using of highly powered magnetrons in combination with advanced sputter techniques. However, besides high deposition rates the uniformity of such coatings has to be carefully considered. First the basics of reactive sputtering processes and dual magnetron sputtering are summarized. Different methods for process stabilization and control are commonly used for reactive sputtering. The Plasma Emission Monitor (PE M) offers the prerequisite for fast acting process control derived from the in-situ intensity measurements of a spectral line of the sputtered target material. Combined by multiple Plasma Emission Monitor control loops segmented gas manifolds are able to provide excellent thin film uniformity at high deposition rates. The Dual Magnetron allows a broad range of processing by different power supply modes. Medium frequency, DC and pulsed DC power supplies can be used for high quality layers. Whereas the large area coating of highly isolating layers like TiO 2 or SiO 2 is dominated by MF sputtering best results for coating with transparent conductive oxides are obtained by dual DC powering of the dual magnetron arrangement. (Author)

Multistage charged particle accelerator, with high-vacuum insulation

International Nuclear Information System (INIS)

Holl, P.

1976-01-01

A multistage charged-particle accelerator for operating with accelerating voltages higher than 150 kV is described. The device consists essentially of a high-voltage insulator, a source for producing charged particles, a Wehnelt cylinder, an anode, and a post-accelerating tube containing stack-wise positioned post-accelerating electrodes. A high vacuum is used for insulating the parts carrying the high voltages, and at least one cylindrical screen surrounding these parts is interposed between them and the vacuum vessel, which can itself also function as a cylindrical screen

Investigation of optical and microstructural properties of RF magnetron sputtered PTFE films for hydrophobic applications

International Nuclear Information System (INIS)

Tripathi, S.; Haque, S. Maidul; Rao, K. Divakar; De, Rajnarayan; Shripathi, T.; Deshpande, U.; Ganesan, V.; Sahoo, N.K.

2016-01-01

Highlights: • Polytetrafluoroethylene films were made by RF sputtering by varying deposition time. • With increasing deposition time, thickness shows unusual trend due to backsputtering. • Major contribution of CF 2 and CF 3 bonds in the samples is seen by ATR-FTIR. • Deposition time influences film thickness but all samples remain hydrophobic. • XPS spectra show strong CF x bonds at the surface. - Abstract: The deposition time dependence of optical, structural and morphological properties of thin as well as ultrathin Polytetrafluoroethylene (PTFE) sputtered films have been explored in the present communication. The films were prepared by RF magnetron sputtering under high vacuum condition, as a function of deposition time. The ellipsometry as well as X-ray reflectivity data show a drastic reduction in film thickness as the deposition time increases from 5 s to 10 s, possibly as a consequence of back sputtering. With subsequent deposition, back sputtering component decreases and hence, thickness increases with increase in deposition time. Atomic force microscopy (AFM) images show a slight change in growth morphology although roughness is independent of deposition time. Attenuated total reflection Fourier transform infrared spectroscopy (ATR-FTIR) measurements showed the presence of C−C and CF x (x = 1–3) bonds in all the PTFE films. Supporting this, corresponding X-ray photoelectron spectroscopy (XPS) curves fitted for C-1s and F-1s peaks revealed a major contribution from CF 2 bonds along with significant contribution from CF 3 bonds leading to an F/C ratio of ∼1.5 giving hydrophobic nature of all the films.

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

CERN Document Server

Martins, D R; Verdonck, P; Brown, I G

2002-01-01

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

International Nuclear Information System (INIS)

Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

2002-01-01

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the stopping and range of ions in matter code. We find film contamination of the order of 10 -4 -10 -3 , and the memory of the prior history of the deposition hardware can be relatively long lasting

Contamination due to memory effects in filtered vacuum arc plasma deposition systems

Energy Technology Data Exchange (ETDEWEB)

Martins, D.R.; Salvadori, M.C.; Verdonck, P.; Brown, I.G.

2002-08-13

Thin film synthesis by filtered vacuum arc plasma deposition is a widely used technique with a number of important emerging technological applications. A characteristic feature of the method is that during the deposition process not only is the substrate coated by the plasma, but the plasma gun itself and the magnetic field coil and/or vacuum vessel section constituting the macroparticle filter are also coated to some extent. If then the plasma gun cathode is changed to a new element, there can be a contamination of the subsequent film deposition by sputtering from various parts of the system of the previous coating species. We have experimentally explored this effect and compared our results with theoretical estimates of sputtering from the SRIM (Stopping and Range of Ions in Matter) code. We find film contamination of order 10-4 - 10-3, and the memory of the prior history of the deposition hardware can be relatively long-lasting.

Extremely-high vacuum pressure measurement by laser ionization

International Nuclear Information System (INIS)

Kokubun, Kiyohide

1991-01-01

Laser ionization method has the very high sensitivity for detecting atoms and molecules. Hurst et al. successfully detected a single Cs atom by means of resonance ionization spectroscopy developed by them. Noting this high sensitivity, the authors have attempted to apply the laser ionization method to measure gas pressure, particularly in the range down to extremely high vacuum. At present, hot cathode ionization gauges are used for measuring gas pressure down to ultrahigh vacuum, however, those have a number of disadvantages. The pressure measurement using lasers does not have such disadvantages. The pressure measurement utilizing the laser ionization method is based on the principle that when laser beam is focused through a lens, the amount of atom or molecule ions generated in the focused space region is proportional to gas pressure. In this paper, the experimental results are presented on the nonresonant multiphoton ionization characteristics of various kinds of gases, the ion detection system with high sensitivity and an extremely high vacuum system prepared for the laser ionization experiment. (K.I.)

Indium--tin oxide films radio frequency sputtered from specially formulated high density indium--tin oxide targets

International Nuclear Information System (INIS)

Kulkarni, S.; Bayard, M.

1991-01-01

High density ITO (indium--tin oxide) targets doped with Al 2 O 3 and SiO 2 manufactured in the Tektronix Ceramics Division have been used to rf sputter ITO films of various thicknesses on borosilicate glass substrates. Sputtering in an oxygen--argon gas mixture and annealing in forming gas, resulted in ITO films exhibiting 90% transmission at 550 nm and a sheet resistance of 15 Ω/sq for a thickness of 1100 A. Sputtering in an oxygen--argon gas mixture and annealing in air increased sheet resistance without a large effect on the transmission. Films sputtered in argon gas alone were transparent in the visible and the sheet resistance was found to be 100--180 Ω/sq for the same thickness, without annealing

HIGH PRODUCTIVITY VACUUM BLASTING SYSTEM

International Nuclear Information System (INIS)

McPhee, William S.

1999-01-01

construct a pre-prototype of the nozzle, blast head with wind curtain, sensors, and dust separator and test this system to assess the performance of the new design under controlled conditions at the contractor's facility. In phase III, the Contractor shall design and construct a prototype of the High Productivity Vacuum Blasting System, based on the results of the pre-prototype design and testing performed. This unit will be a full-scale prototype and will be tested at a designated Department of Energy (DOE) facility. Based on the results, the system performance, the productivity, and the economy of the improved vacuum blasting system will be evaluated

Vacuum amplification of the high-frequency electromagnetic radiation

OpenAIRE

Vilkovisky, G. A.

1998-01-01

When an electrically charged source is capable of both emitting the electromagnetic waves and creating charged particles from the vacuum, its radiation gets so much amplified that only the backreaction of the vacuum makes it finite. The released energy and charge are calculated in the high-frequency approximation. The technique of expectation values is advanced and employed.

Targets on the basis of ferrites and high-temperature superconductors for ion-plasma sputtering

International Nuclear Information System (INIS)

Lepeshev, A.A.; Saunin, V.N.; Telegin, S.V.; Polyakova, K.P.; Seredkin, V.A.; Pol'skij, A.I.

2000-01-01

Paper describes a method to produce targets for ion-plasma sputtering using plasma splaying of the appropriate powders on a cooled metal basis. Application of the plasma process was demonstrated to enable to produce complex shaped targets under the controlled atmosphere on the basis of ceramic materials ensuring their high composition homogeneity, as well as, reliable mechanical and thermal contact of the resultant coating with the base. One carried out experiments in ion-plasma sputtering of targets to prepare ferrite polycrystalline films to be used in magnetooptics and to prepare high-temperature superconductor epitaxial films [ru

Vacuum system design for the PEP-II B Factory High-Energy Ring

International Nuclear Information System (INIS)

Perkins, C.; Bostic, D.; Daly, E.

1994-06-01

The design of the vacuum system for the PEP-II B Factory High-Energy Ring is reviewed. The thermal design and vacuum requirements are particularly challenging in PEP-II due to high stored beam currents up to 3.0 amps in 1658 bunches. The vacuum chambers for the HER arcs are fabricated by electron beam welding extruded copper sections up to 6 m long. Design of these chambers and the vacuum PumPing configuration is described with results from vacuum and thermal analyses

Systematic investigations of low energy Ar ion beam sputtering of Si and Ag

Energy Technology Data Exchange (ETDEWEB)

Feder, R., E-mail: rene.feder@iom-leipzig.de [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany); Frost, F.; Neumann, H.; Bundesmann, C.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung, Permoserstraße 15, 04318 Leipzig (Germany)

2013-12-15

Ion beam sputter deposition (IBD) delivers some intrinsic features influencing the growing film properties, because ion properties and geometrical process conditions generate different energy and spatial distributions of the sputtered and scattered particles. Even though IBD has been used for decades, the full capabilities are not investigated systematically and specifically used yet. Therefore, a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the generated secondary particles and backscattered ions and the deposited films needs to be done. A vacuum deposition chamber has been set up which allows ion beam sputtering of different targets under variation of geometrical parameters (ion incidence angle, position of substrates and analytics in respect to the target) and of ion beam parameters (ion species, ion energy) to perform a systematic and comprehensive analysis of the correlation between the properties of the ion beam, the properties of the sputtered and scattered particles, and the properties of the deposited films. A set of samples was prepared and characterized with respect to selected film properties, such as thickness and surface topography. The experiments indicate a systematic influence of the deposition parameters on the film properties as hypothesized before. Because of this influence, the energy distribution of secondary particles was measured using an energy-selective mass spectrometer. Among others, experiments revealed a high-energetic maximum for backscattered primary ions, which shifts with increasing emission angle to higher energies. Experimental data are compared with Monte Carlo simulations done with the well-known Transport and Range of Ions in Matter, Sputtering version (TRIM.SP) code [J.P. Biersack, W. Eckstein, Appl. Phys. A: Mater. Sci. Process. 34 (1984) 73]. The thicknesses of the films are in good agreement with those calculated from simulated particle fluxes. For the positions of the

Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

Science.gov (United States)

Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

2002-07-01

We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

Effects of surface relief on the high-dose sputtering of amorphous silicon and graphite by Ar ions

International Nuclear Information System (INIS)

Shulga, V.I.

2014-01-01

The effects of ion-induced surface relief on high-dose sputtering of amorphous silicon and graphite targets have been studied using binary-collision computer simulation. The relief was modeled as a wavelike surface along two mutually perpendicular surface axes (a 3D hillock-and-valley relief). Most simulations were carried out for normally-incident 30-keV Ar ions. It was shown that the surface relief can both increase and decrease the sputtering yield compared to that for a flat surface. The results of simulations suggest that stabilization of the surface relief is possible even in the absence of any smoothing processes such as surface diffusion of atoms. Effects of a surface relief on the experimentally measurable angular and energy distributions of sputtered atoms are also considered. The fitting parameters of these distributions are shown to be non-monotonic functions of the relief aspect ratio. The angular distribution of atoms sputtered from a relief surface is modulated to a great extent by the shape of the relief. For a rough surface, azimuthal isotropy of the angular distribution of sputtered atoms was found, but at high bombarding energies only

Differential ion beam sputtering of segregated phases in aluminum casting alloys

International Nuclear Information System (INIS)

Nguyen, Chuong L.; Wirtz, Tom; Fleming, Yves; Metson, James B.

2013-01-01

Highlights: ► Novel combination of SIMS and SPM for accurate 3D chemical mapping. ► Different removal rates of metallurgical phases by ion beam. ► Faster oxidation rate of silicon vs. aluminum at room temperature in vacuum. - Abstract: Differential sputtering of materials is an important phenomenon in materials science with many implications. One of the practical applications of this phenomenon is the modification of the interface between a substrate and coating during sputter coating of materials. Aluminum casting alloys, as common materials in many applications, are suitable candidates to investigate this phenomenon due to their phase separated microstructures. Changes at the sample surface under ion bombardment can be characterized by a range of complimentary techniques. The novel SIMS–SPM instrument used here enables a thorough investigation into the evolution of topography and composition caused by ion beam sputtering. For the alloy examined in this work, the aluminum regions are removed faster than the silicon particles. The faster oxidation rate of silicon compared to aluminum in the exposed surface can also be deduced from this study.

Heat treatable indium tin oxide films deposited with high power pulse magnetron sputtering

International Nuclear Information System (INIS)

Horstmann, F.; Sittinger, V.; Szyszka, B.

2009-01-01

In this study, indium tin oxide (ITO) films were prepared by high power pulse magnetron sputtering [D. J. Christie, F. Tomasel, W. D. Sproul, D. C. Carter, J. Vac. Sci. Technol. A, 22 (2004) 1415. ] without substrate heating. The ITO films were deposited from a ceramic target at a deposition rate of approx. 5.5 nm*m/min kW. Afterwards, the ITO films were covered with a siliconoxynitride film sputtered from a silicon alloy target in order to prevent oxidation of the ITO film during annealing at 650 deg. C for 10 min in air. The optical and electrical properties as well as the texture and morphology of these films were investigated before and after annealing. Mechanical durability of the annealed films was evaluated at different test conditions. The results were compared with state-of-the art ITO films which were obtained at optimized direct current magnetron sputtering conditions

Nano-laminate vs. direct deposition of high permittivity gadolinium scandate on silicon by high pressure sputtering

Energy Technology Data Exchange (ETDEWEB)

Feijoo, P.C., E-mail: pedronska@fis.ucm.es [Dpto. Física Aplicada III (Electricidad y Electrónica), Universidad Complutense de Madrid, Fac. de CC. Físicas. Av/Complutense S/N, E-28040 Madrid (Spain); Pampillón, M.A.; San Andrés, E. [Dpto. Física Aplicada III (Electricidad y Electrónica), Universidad Complutense de Madrid, Fac. de CC. Físicas. Av/Complutense S/N, E-28040 Madrid (Spain); Fierro, J.L.G. [Instituto de Catálisis y Petroleoquímica, Consejo Superior de Investigaciones Científicas, C/Marie Curie 2, E-28049 Cantoblanco (Spain)

2015-10-30

In this work we use the high pressure sputtering technique to deposit the high permittivity dielectric gadolinium scandate on silicon substrates. This nonconventional deposition technique prevents substrate damage and allows for growth of ternary compounds with controlled composition. Two different approaches were assessed: the first one consists of depositing the material directly from a stoichiometric GdScO{sub 3} target; in the second one, we anneal a nano-laminate of < 0.5 nm thick Gd{sub 2}O{sub 3} and Sc{sub 2}O{sub 3} films in order to control the composition of the scandate. Metal–insulator–semiconductor capacitors were fabricated with platinum gates for electrical characterization. Accordingly, we grew a Gd-rich Gd{sub 2−x}Sc{sub x}O{sub 3} film that, in spite of higher leakage currents, presents a better effective relative permittivity of 21 and lower density of defects. - Highlights: • GdScO is deposited on Si as a high permittivity dielectric by two procedures. • Films sputtered from GdScO{sub 3} target are Sc-rich and present thick interface SiO{sub x}. • Gd-rich GdScO is obtained from a nano-laminate sputtered from Sc{sub 2}O{sub 3} and Gd{sub 2}O{sub 3}. • Gd{sub 1.8}Sc{sub 0.2}O{sub 3} shows good effective permittivity and electrical properties.

Semi-empirical formulas for sputtering yield

International Nuclear Information System (INIS)

Yamamura, Yasumichi

1994-01-01

When charged particles, electrons, light and so on are irradiated on solid surfaces, the materials are lost from the surfaces, and this phenomenon is called sputtering. In order to understand sputtering phenomenon, the bond energy of atoms on surfaces, the energy given to the vicinity of surfaces and the process of converting the given energy to the energy for releasing atoms must be known. The theories of sputtering and the semi-empirical formulas for evaluating the dependence of sputtering yield on incident energy are explained. The mechanisms of sputtering are that due to collision cascade in the case of heavy ion incidence and that due to surface atom recoil in the case of light ion incidence. The formulas for the sputtering yield of low energy heavy ion sputtering, high energy light ion sputtering and the general case between these extreme cases, and the Matsunami formula are shown. At the stage of the publication of Atomic Data and Nuclear Data Tables in 1984, the data up to 1983 were collected, and about 30 papers published thereafter were added. The experimental data for low Z materials, for example Be, B and C and light ion sputtering data were reported. The combination of ions and target atoms in the collected sputtering data is shown. The new semi-empirical formula by slightly adjusting the Matsunami formula was decided. (K.I.)

Calculated sputtering and atomic displacement cross-sections for applications to medium voltage analytical electron microscopy

International Nuclear Information System (INIS)

Bradley, C.R.; Zaluzec, N.J.

1987-08-01

The development of medium voltage electron microscopes having high brightness electron sources and ultra-high vacuum environments has been anticipated by the microscopy community now for several years. The advantages of such a configuration have been discussed to great lengths, while the potential disadvantages have for the most part been neglected. The most detrimental of these relative to microcharacterization are the effects of electron sputtering and atomic displacement to the local specimen composition. These effects have in the past been considered mainly in the high voltage electron microscope regime and generally were ignored in lower voltage instruments. Recent experimental measurements have shown that the effects of electron sputtering as well as radiation induced segregation can be observed in conventional transmission electron microscopes. It is, therefore, important to determine at what point the effects will begin to manifest themselves in the new generation of medium voltage analytical electron microscopes. In this manuscript we present new calculations which allow the individual experimentalist to determine the potential threshold levels for a particular elemental system and thus avoid the dangers of introducing artifacts during microanalysis. 12 refs., 3 figs

Rutile TiO2 thin films grown by reactive high power impulse magnetron sputtering

International Nuclear Information System (INIS)

Agnarsson, B.; Magnus, F.; Tryggvason, T.K.; Ingason, A.S.; Leosson, K.; Olafsson, S.; Gudmundsson, J.T.

2013-01-01

Thin TiO 2 films were grown on Si(001) substrates by reactive dc magnetron sputtering (dcMS) and high power impulse magnetron sputtering (HiPIMS) at temperatures ranging from 300 to 700 °C. Optical and structural properties of films were compared both before and after post-annealing using scanning electron microscopy, low angle X-ray reflection (XRR), grazing incidence X-ray diffractometry and spectroscopic ellipsometry. Both dcMS- and HiPIMS-grown films reveal polycrystalline rutile TiO 2 , even prior to post-annealing. The HiPIMS-grown films exhibit significantly larger grains compared to that of dcMC-grown films, approaching 100% of the film thickness for films grown at 700 °C. In addition, the XRR surface roughness of HiPIMS-grown films was significantly lower than that of dcMS-grown films over the whole temperature range 300–700 °C. Dispersion curves could only be obtained for the HiPIMS-grown films, which were shown to have a refractive index in the range of 2.7–2.85 at 500 nm. The results show that thin, rutile TiO 2 films, with high refractive index, can be obtained by HiPIMS at relatively low growth temperatures, without post-annealing. Furthermore, these films are smoother and show better optical characteristics than their dcMS-grown counterparts. - Highlights: • We demonstrate growth of rutile TiO 2 on Si (111) by high power impulse magnetron sputtering. • The films exhibit significantly larger grains than dc magnetron sputtered films • TiO 2 films with high refractive index are obtained without post-growth annealing

Characterization of TiO2 Thin Films on Glass Substrate Growth Using DC Sputtering Technique

International Nuclear Information System (INIS)

Agus Santoso; Tjipto Sujitno; Sayono

2002-01-01

It has been fabricated and characterization a TiO 2 thin films deposited on glass substrate using DC sputtering technique. Fabrication of TiO 2 thin films were carried out at electrode voltage 4 kV, sputtering current 5 mA, vacuum pressure 5 x 10 -4 torr, deposition time 150 minutes, and temperature of the substrate were varied from 150 -350 o C, while as a gas sputter was argon. The results was tested their micro structure using SEM, and crystal structure using XRD and found that the crystal structure of TiO 2 powder before deposited on glass substrate was rutile and anatase with orientation (110) and (200) for anatase and (100) and (111) rutile structure. While the crystal structure which deposited at temperature 150 o C and deposition time 2.5 hours was anatase with orientation (001) and (200). (author)

Sputtered catalysts

International Nuclear Information System (INIS)

Tyerman, W.J.R.

1978-01-01

A method is described for preparing a supported catalyst by a sputtering process. A material that is catalytic, or which is a component of a catalytic system, is sputtered on to the surface of refractory oxide particles that are compatible with the sputtered material and the sputtered particles are consolidated into aggregate form. The oxide particles before sputtering should have a diameter in the range 1000A to 50μ and a porosity less than 0.4 ml/g, and may comprise MgO, Al 2 O 3 or SiO 2 or mixtures of these oxides, including hydraulic cement. The particles may possess catalytic activity by themselves or in combination with the catalytic material deposited on them. Sputtering may be effected epitaxially and consolidation may be effected by compaction pelleting, extrusion or spray drying of a slurry. Examples of the use of such catalysts are given. (U.K.)

Materials for high vacuum technology, an overview

CERN Document Server

Sgobba, Stefano

2007-01-01

In modern accelerators stringent requirements are placed on materials of vacuum systems. Their physical and mechanical properties, machinability, weldability or brazeability are key parameters. Adequate strength, ductility, magnetic properties at room as well as low temperatures are important factors for vacuum systems of accelerators working at cryogenic temperatures, such as the Large Hadron Collider (LHC) under construction at CERN. In addition, baking or activation of Non-Evaporable Getters (NEG) at high temperatures impose specific choices of material grades of suitable tensile and creep properties in a large temperature range. Today, stainless steels are the dominant materials of vacuum constructions. Their metallurgy is extensively treated. The reasons for specific requirements in terms of metallurgical processes are detailed, in view of obtaining adequate purity, inclusion cleanliness, and fineness of the microstructure. In many cases these requirements are crucial to guarantee the final leak tightnes...

Advances in high voltage insulation and arc interruption in SF6 and vacuum

CERN Document Server

Maller, V N

1982-01-01

Advances in High Voltage Insulation and Arc Interruption in SF6 and Vacuum deals with high voltage breakdown and arc extinction in sulfur hexafluoride (SF6) and high vacuum, with special emphasis on the application of these insulating media in high voltage power apparatus and devices. The design and developmental aspects of various high voltage power apparatus using SF6 and high vacuum are highlighted. This book is comprised of eight chapters and opens with a discussion on electrical discharges in SF6 and high vacuum, along with the properties and handling of SF6 gas. The following chapters fo

Vacuum system of tandem type electrostatic accelerator of Kyushu University

International Nuclear Information System (INIS)

Nakajima, Yutaka

1981-01-01

In the tandem type electrostatic accelerator of Kyushu University, the problem of vacuum in the beam transport system including the accelerator tube has been considered as one of the important elements for the performance of the electrostatic accelerator from the beginning of construction. Though the three-stage tandem accelerating scheme was considered as the beam transport system at the beginning of the program, in which the existing 6 MV Van de Graaf accelerator was to be used as the injector, three types of ion sources are prepared at present; the sputter ion source to generate negative heavy ions, the polarizing ion source to generate negative polarized protons or deuterons, and direct extraction type negative ion source. Ultrahigh evacuating system, in which the sputter ion pump is mainly employed, and the turbo-molecular pump is used supplementarily, was installed in the vacuum system. The vacuum of approximately 10 - 9 Torr level off-beam at the inlet or outlet of the accelerator tube and approximately 10 - 8 Torr level in the tubing section in the center terminal were achieved. Since the upper limit of withstand voltage of the accelerating tube was not able to be satisfied for the insufficient baking at the beginning, it was finally decided that the accelerating tube should be heated by directly supplying power to the electrode through low voltage discharge in the tube. This method enabled the generated voltage at the terminal to exceed 10 MV. (Wakatsuki, Y.)

Low-Damage Sputter Deposition on Graphene

Science.gov (United States)

Chen, Ching-Tzu; Casu, Emanuele; Gajek, Marcin; Raoux, Simone

2013-03-01

Despite its versatility and prevalence in the microelectronics industry, sputter deposition has seen very limited applications for graphene-based electronics. We have systematically investigated the sputtering induced graphene defects and identified the reflected high-energy neutrals of the sputtering gas as the primary cause of damage. In this talk, we introduce a novel sputtering technique that is shown to dramatically reduce bombardment of the fast neutrals and improve the structural integrity of the underlying graphene layer. We also demonstrate that sputter deposition and in-situ oxidation of 1 nm Al film at elevated temperatures yields homogeneous, fully covered oxide films with r.m.s. roughness much less than 1 monolayer, which shows the potential of using such technique for gate oxides, tunnel barriers, and multilayer fabrication in a wide range of graphene devices.

Understanding deposition rate loss in high power impulse magnetron sputtering: I. Ionization-driven electric fields

International Nuclear Information System (INIS)

Brenning, N; Huo, C; Raadu, M A; Lundin, D; Helmersson, U; Vitelaru, C; Stancu, G D; Minea, T

2012-01-01

The lower deposition rate for high power impulse magnetron sputtering (HiPIMS) compared with direct current magnetron sputtering for the same average power is often reported as a drawback. The often invoked reason is back-attraction of ionized sputtered material to the target due to a substantial negative potential profile, sometimes called an extended presheath, from the location of ionization toward the cathode. Recent studies in HiPIMS devices, using floating-emitting and swept-Langmuir probes, show that such extended potential profiles do exist, and that the electric fields E z directed toward the target can be strong enough to seriously reduce ion transport to the substrate. However, they also show that the potential drops involved can vary by up to an order of magnitude from case to case. There is a clear need to understand the underlying mechanisms and identify the key discharge variables that can be used for minimizing the back-attraction. We here present a combined theoretical and experimental analysis of the problem of electric fields E z in the ionization region part of HiPIMS discharges, and their effect on the transport of ionized sputtered material. In particular, we have investigated the possibility of a ‘sweet spot’ in parameter space in which the back-attraction of ionized sputtered material is low. It is concluded that a sweet spot might possibly exist for some carefully optimized discharges, but probably in a rather narrow window of parameters. As a measure of how far a discharge is from such a window, a Townsend product Π Townsend is proposed. A parametric analysis of Π Townsend shows that the search for a sweet spot is complicated by the fact that contradictory demands appear for several of the externally controllable parameters such as high/low working gas pressure, short/long pulse length, high/low pulse power and high/low magnetic field strength. (paper)

Annealing induced morphological modifications in PTFE films deposited by magnetron sputtering

Science.gov (United States)

Tripathi, S.; De, Rajnarayan; Rao, K. Divakar; Haque, S. Maidul; Misal, J. S.; Prathap, C.; Das, S. C.; Ganesan, V.; Sahoo, N. K.

2017-05-01

As grown RF magnetron sputtered polytetrafluoroethylene (PTFE) thin films were subjected to vacuum annealing at optimized elevated temperature of 200° C for varying time duration and corresponding surface morphological changes were recorded. The columnar structures appearing after an annealing duration of 2 hours are interesting for fabrication of rough PTFE surfaces towards possible applications in hydrophobicity along with high transmission. Supported by transmission data, the AFM images show a transformation of smooth PTFE surface with less than 2 nm rms roughness to a very rough surface. The results are interpreted in terms of thermal energy induced modifications only at the surface without any change in the original bonding structure on the surface and inside the sample. Preliminary studies indicate that the optimization of roughness and transmission together on such surfaces may lead to high water contact angles.

Studies on ion scattering and sputtering processes relevant to ion beam sputter deposition of multicomponent thin films

International Nuclear Information System (INIS)

Auciello, O.; Ameen, M.S.; Kingon, A.I.

1989-01-01

Results from computer simulation and experiments on ion scattering and sputtering processes in ion beam sputter deposition of high Tc superconducting and ferroelectric thin films are presented. It is demonstrated that scattering of neutralized ions from the targets can result in undesirable erosion of, and inert gas incorporation in, the growing films, depending on the ion/target atom ass ratio and ion beam angle of incidence/target/substrate geometry. The studies indicate that sputtering Kr + or Xe + ions is preferable to the most commonly used Ar + ions, since the undesirable phenomena mentioned above are minimized for the first two ions. These results are used to determine optimum sputter deposition geometry and ion beam parameters for growing multicomponent oxide thin films by ion beam sputter-deposition. 10 refs., 5 figs

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Lisco, F., E-mail: F.Lisco@lboro.ac.uk [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom); Losurdo, M. [Institute of Inorganic Methodologies and of Plasmas, IMIP-CNR, via Orabona 4, 70126 Bari (Italy); Walls, J.M. [Centre for Renewable Energy Systems Technology (CREST), School of Electronic, Electrical and Systems Engineering, Loughborough University, Leicestershire LE11 3TU (United Kingdom)

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films.

High rate deposition of thin film cadmium sulphide by pulsed direct current magnetron sputtering

International Nuclear Information System (INIS)

Lisco, F.; Kaminski, P.M.; Abbas, A.; Bowers, J.W.; Claudio, G.; Losurdo, M.; Walls, J.M.

2015-01-01

Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). In this paper we report on the development of a process using pulsed Direct Current magnetron sputtering which allows nanometre control of thin film thickness using time only. The CdS thin films deposited in this process are highly uniform and smooth. They exhibit the preferred hexagonal structure at room temperature deposition and they have excellent optical properties. Importantly, the process is highly stable despite the use of a semi-insulating magnetron target. Moreover, the process is very fast. The deposition rate using 1.5 kW of power to a 6-inch circular magnetron was measured to be greater than 8 nm/s. This makes the process suitable for industrial deployment. - Highlights: • Pulsed DC magnetron sputtering of CdS • High deposition rate deposition • Uniform, pinhole free films

High vacuum tribology of polycrystalline diamond coatings

Indian Academy of Sciences (India)

Polycrystalline diamond coatings; hot filament CVD; high vacuum tribology. 1. Introduction .... is a characteristic of graphite. We mark the (diamond ... coefficient of friction due to changes in substrate temperature. The average coefficient of.

Ultra high vacuum technology

CERN Multimedia

CERN. Geneva

2001-01-01

A short introduction for some basic facts and equations. Subsquently, discussion about: Building blocks of an ultrahigh vacuum system - Various types of pumps required to reach uhv and methods to reduce these effects - Outgassing phenomena induced by the presence of a particle beam and the most common methods to reduce these effects It will be given some practical examples from existing CERN accelerators and discuss the novel features of the future LHC vacuum system.

Isotope puzzle in sputtering

International Nuclear Information System (INIS)

Zheng Liping

1998-01-01

Mechanisms affecting multicomponent material sputtering are complex. Isotope sputtering is the simplest in the multicomponent materials sputtering. Although only mass effect plays a dominant role in the isotope sputtering, there is still an isotope puzzle in sputtering by ion bombardment. The major arguments are as follows: (1) At the zero fluence, is the isotope enrichment ejection-angle-independent or ejection-angle-dependent? (2) Is the isotope angular effect the primary or the secondary sputter effect? (3) How to understand the action of momentum asymmetry in collision cascade on the isotope sputtering?

A highly miniaturized vacuum package for a trapped ion atomic clock

Energy Technology Data Exchange (ETDEWEB)

Schwindt, Peter D. D., E-mail: pschwin@sandia.gov; Jau, Yuan-Yu; Partner, Heather; Casias, Adrian; Wagner, Adrian R.; Moorman, Matthew; Manginell, Ronald P. [Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States); Kellogg, James R.; Prestage, John D. [Jet Propulsion Laboratory, Pasadena, California 91109 (United States)

2016-05-15

We report on the development of a highly miniaturized vacuum package for use in an atomic clock utilizing trapped ytterbium-171 ions. The vacuum package is approximately 1 cm{sup 3} in size and contains a linear quadrupole RF Paul ion trap, miniature neutral Yb sources, and a non-evaporable getter pump. We describe the fabrication process for making the Yb sources and assembling the vacuum package. To prepare the vacuum package for ion trapping, it was evacuated, baked at a high temperature, and then back filled with a helium buffer gas. Once appropriate vacuum conditions were achieved in the package, it was sealed with a copper pinch-off and was subsequently pumped only by the non-evaporable getter. We demonstrated ion trapping in this vacuum package and the operation of an atomic clock, stabilizing a local oscillator to the 12.6 GHz hyperfine transition of {sup 171}Y b{sup +}. The fractional frequency stability of the clock was measured to be 2 × 10{sup −11}/τ{sup 1/2}.

Vacuum thermal evaporation of polyaniline doped with camphor sulfonic acid

Energy Technology Data Exchange (ETDEWEB)

Boyne, Devon; Menegazzo, Nicola; Pupillo, Rachel C.; Rosenthal, Joel; Booksh, Karl S., E-mail: kbooksh@udel.edu [Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716 (United States)

2015-05-15

Intrinsically conducting polymers belong to a class of organic polymers with intriguing electronic and physical properties specifically for electro-optical applications. Significant interest into doped polyaniline (PAni) can be attributed to its high conductivity and environmental stability. Poor dissolution in most solvents has thus far hindered the successful integration of PAni into commercial applications, which in turn, has led to the investigations of various deposition and acidic doping methods. Physical vapor deposition methods, including D.C. magnetron sputtering and vacuum thermal evaporation, have shown exceptional control over physical film properties (thickness and morphology). However, resulting films are less conductive than films deposited by conventional methods (i.e., spin and drop casting) due to interruption of the hyperconjugation of polymer chains. Specifically, vacuum thermal evaporation requires a postdoping process, which results in incorporation of impurities and oxidation of surface moieties. In this contribution, thermally evaporated films, sequentially doped by vacuum evaporation of an organic acid (camphorsulfonic acid, CSA) is explored. Spectroscopic evidence confirms the successful doping of PAni with CSA while physical characterization (atomic force microscopy) suggests films retain good morphology and are not damaged by the doping process. The procedure presented herein also combines other postpreparation methods in an attempt to improve conductivity and/or substrate adhesion.

Design and realization of a sputter deposition system for the in situ- and in operando-use in polarized neutron reflectometry experiments

Science.gov (United States)

Schmehl, Andreas; Mairoser, Thomas; Herrnberger, Alexander; Stephanos, Cyril; Meir, Stefan; Förg, Benjamin; Wiedemann, Birgit; Böni, Peter; Mannhart, Jochen; Kreuzpaintner, Wolfgang

2018-03-01

We report on the realization of a sputter deposition system for the in situ- and in operando-use in polarized neutron reflectometry experiments. Starting with the scientific requirements, which define the general design considerations, the external limitations and boundaries imposed by the available space at a neutron beamline and by the neutron and vacuum compatibility of the used materials, are assessed. The relevant aspects are then accounted for in the realization of our highly mobile deposition system, which was designed with a focus on a quick and simple installation and removability at the beamline. Apart from the general design, the in-vacuum components, the auxiliary equipment and the remote control via a computer, as well as relevant safety aspects are presented in detail.

Highly aligned carbon nanotube arrays fabricated by bias sputtering

International Nuclear Information System (INIS)

Hayashi, Nobuyuki; Honda, Shin-ichi; Tsuji, Keita; Lee, Kuei-Yi; Ikuno, Takashi; Fujimoto, Keiichi; Ohkura, Shigeharu; Katayama, Mitsuhiro; Oura, Kenjiro; Hirao, Takashi

2003-01-01

Vertically aligned carbon nanotube (CNT) arrays have been successfully grown on Si substrates by dc bias sputtering. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) observations revealed that the resultant arrays consisted of dense CNTs with diameters of 40-60 nm and lengths of 300-400 nm. The CNTs were found to have a bamboo-like structure at the end of which metallic nanoparticle was formed, indicating tip growth mechanism. The energy enhancement of carbon particles is a key factor for synthesis of CNTs using dc bias sputtering system

Baking system for vacuum components in INDUS-2

International Nuclear Information System (INIS)

Bhange, Nilesh J.; Bhatnagar, Prateek; Shukla, S.K.

2005-01-01

Optimized bake-out procedures are very important for the overall reliability of vacuum system. In this process the UHV components like Sputter ion pump (SIP), Titanium sublimation pump (TSP) are subjected to temperature rise for sufficiently long period of time. Baking is necessary for obtaining low out gassing rates. In order to provide controlled baking of UHV (Ultra High Vacuum) components for INDUS-II an intelligent ON/OFF control system was needed. For that purpose distributed control system was suitable. For fulfillment of this need modular baking system was developed. This system contains Temperature controller unit (TCU), Pressure Monitoring Unit (PMU), and Temperature control and pressure Monitoring Interface Software (TCPMIS). Each TCU is an eight channel temperature controlling unit. PMU is eight channel pressure monitoring unit to which analog data from gauges like Penning, BA Gauge controllers is given. TCPMIS is a user interface software developed for, controlling up to 5 TCU's. In this way 40 channel temperature control, data logging of 40 channel temperature and logging of eight channel pressures was realized. The present paper describes details about computer controlled baking system. (author)

A simple, high-yield, apparatus for NEG coating of vacuum beamline elements

International Nuclear Information System (INIS)

Ron, G; Oort, R; Lee, D

2010-01-01

Non-Evaporable Getter (NEG) materials are extremely useful in vacuum systems for achieving Ultra High Vacuum. Recently, these materials have been used to coat the inner surfaces of vacuum components, acting as an internal, passive, vacuum pump. We have constructed a low cost apparatus, which allows coating of very small diameter vacuum tubes, used as differential pumping stages. Despite the relative ease of construction, we are routinely able to achieve high coating yields. We further describe an improvement to our system, which is able to achieve the same yield, at an even lower complexity by using an easily manufactured permanent magnet arrangement. The designs described are extendible to virtually any combination of length and diameter of the components to be coated.

IN-SITU EXPERIMENTS OF VACUUM DISCHARGE USING SCANNING ELECTRON MICROSCOPES

CERN Document Server

Muranaka, T; Leifer, K; Ziemann, V

2011-01-01

The fundamental understanding of vacuum discharge mechanisms and induced surface damage is indispensable for the CLIC feasibility study. We have been conducting dc sparc experiments inside a Scanning Electron Microscope (SEM) at Uppsala university in order to investigate localized breakdown phenomena. By using a SEM, we achieve the resolution of the electron probe in the few-nm range, which is of great advantage as the surface roughness of the polished accelerating structures is in the same scale. The high accelerating field of 1 GV/m is realized by biasing an electrode with 1 kV set above the sample with a gap of sub μm. Furthermore, a second SEM equipped with a Focused Ion Beam (FIB) is used to modify the topography of sample surfaces thus the geometrical dependence of field emissions and vacuum discharges can be studied. The FIB can be used for the surface damage analysis as well. We have demonstrated subsurface damage observations by using FIB to sputter a rectangular recess into the sample in the breakd...

Cermet insert high voltage holdoff for ceramic/metal vacuum devices

Science.gov (United States)

Ierna, William F.

1987-01-01

An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

High Charge State Ions Extracted from Metal Plasmas in the Transition Regime from Vacuum Spark to High Current Vacuum Arc

International Nuclear Information System (INIS)

Yushkov, Georgy Yu.; Anders, A.

2008-01-01

Metal ions were extracted from pulsed discharge plasmas operating in the transition region between vacuum spark (transient high voltage of kV) and vacuum arc (arc voltage ∼ 20 V). At a peak current of about 4 kA, and with a pulse duration of 8 (micro)s, we observed mean ion charges states of about 6 for several cathode materials. In the case of platinum, the highest average charge state was 6.74 with ions of charge states as high as 10 present. For gold we found traces of charge state 11, with the highest average charge state of 7.25. At currents higher than 5 kA, non-metallic contaminations started to dominate the ion beam, preventing further enhancement of the metal charge states

Laser fluorescence spectroscopy of sputtered uranium atoms

International Nuclear Information System (INIS)

Wright, R.B.; Pellin, M.J.; Gruen, D.M.; Young, C.E.

1979-01-01

Laser induced fluorescence (LIF) spectroscopy was used to study the sputtering of 99.8% 238 U metal foil when bombarded by normally incident 500 to 3000 eV Ne + , Ar + , Kr + , and O 2 + . A three-level atom model of the LIF processes is developed to interpret the observed fluorescent emission from the sputtered species. The model shows that close attention must be paid to the conditions under which the experiment is carried out as well as to the details of the collision cascade theory of sputtering. Rigorous analysis shows that when properly applied, LIF can be used to investigate the predictions of sputtering theory as regards energy distributions of sputtered particles and for the determination of sputtering yields. The possibility that thermal emission may occur during sputtering can also be tested using the proposed model. It is shown that the velocity distribution (either the number density or flux density distribution, depending upon the experimental conditions) of the sputtered particles can be determined using the LIF technique and that this information can be used to obtain a description of the basic sputtering mechanisms. These matters are discussed using the U-atom fluorescence measurements as a basis. The relative sputtering yields for various incident ions on uranium were also measured for the first time using the LIF technique. A surprisingly high fraction of the sputtered uranium atoms were found to occupy the low lying metastable energy levels of U(I). The population of the sputtered metastable atoms were found approximately to obey a Boltzman distribution with an effective temperature of 920 +- 100 0 K. 41 references

Arc-discharge and magnetron sputtering combined equipment for nanocomposite coating deposition

International Nuclear Information System (INIS)

Koval, N.N.; Borisov, D.P.; Savostikov, V.M.

2005-01-01

It is known that characteristics of nanocomposite coatings produced by reactive magnetron sputtering undergo an essential influence on the following parameters such as original component composition of targets being sputtered, as well as abundance ratio of such components in the coatings deposited, relative content of inert and reactionary gases in a gas mixture used and a value of operating pressure in a chamber, substrate temperature, and a value of substrate bias potential, determining energy of ionized atoms, ionized atoms flow density, i.e. ion current density on a substrate. The multifactor character of production process of nanocomposite coatings with certain physical and mechanical properties demands a purposeful and complex control on all above-mentioned parameters. To solve such a problem, an arc-discharge and magnetron sputtering combined equipment including a vacuum chamber of approximately ∼ 0.5 m 3 with a built-in low-pressure plasma generator made on the basis of non-self-sustained discharge with a thermal cathode and a planar magnetron combined with two sputtered targets has been created. Construction of such a complex set-up provides both an autonomous mode of operation and simultaneous operation of an arc plasma generator and magnetron sputtering system. Magnetron sputtering of either one or two targets simultaneously is provided as well. An arc plasma generator enables ions current density control on a substrate in a wide range due to discharge current varying from 1 to 100 A. Energy of ions is also being controlled in a wide range by a negative bias potential from 0 to 1000 V applied to a substrate. The wide control range of gas plasma density of a arc discharge of approximately 10 9 -10 11 cm -3 and high uniformity of its distribution over the total volume of an operating chamber (about 15% error with regard to the mean value) provides a purposeful and simultaneous control either of magnetron discharge characteristics (operating pressure of

Photoelectron-spectroscopic and reactivity investigation of thin Pd-Sn films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Skala, T.; Veltruska, K.; Sedlacek, L.; Masek, K.; Matolinova, I.; Matolin, V.

2007-01-01

We have studied Pd-Sn layers with different composition prepared by magnetron sputtering. Layers were sputtered onto Al 2 O 3 and SiO 2 substrates and studied by X-ray photoelectron spectroscopy (XPS). Spectra confirmed that after vacuum annealing residual oxygen and carbon have been removed and bimetallic bonds have been created. The shift of Pd 3d 5/2 core level to higher binding energy followed by the peak narrowing in dependence on the composition was observed, accompanied by the shift of the Pd 4d in the valence band region, induced by hybridization of Pd-d and Sn-s,p states. Experiments carried out on a gas-flow reactor indicate increasing temperature of the CO oxidation with tin ratio in the alloy

Construction of vacuum system for Tristan accumulation ring

International Nuclear Information System (INIS)

Ishimaru, H.; Horikoshi, G.; Kobayashi, M.; Kubo, T.; Mizuno, H.; Momose, T.; Narushima, K.; Watanabe, H.; Yamaguchi, H.

1983-01-01

An all aluminum-alloy vacuum system for the TRISTAN accumulation ring is now under construction. Aluminum and aluminum alloys are preferred materials for ultrahigh vacuum systems of large electron storage rings because of their good thermal conductivity, extremely low outgassing rate, and low residual radioactivity. Vacuum beam chambers for the dipole and quadrupole magnets are extruded using porthole dies. The aluminum alloy 6063-T6 provides superior performance in extrusion. For ultrahigh vacuum performance, a special extrusion technique is applied which, along with the outgassing procedure used, is described in detail. Aluminum alloy 3004 seamless elliptical bellows are inserted between the dipole and quadrupole magnet chambers. These bellows are produced by the hydraulic forming of a seamless tube. The seamless bellows and the beam chambers are joined by fully automatic welding. The ceramic chambers for the kicker magnets, the fast bump magnets, and the slow beam intensity monitor are inserted in the aluminum alloy beam chambers. The ceramic chamber (98% alumina) and elliptical bellows are brazed with brazing sheets (4003-3003-4003) in a vacuum furnace. The brazing technique is described. The inner surface of the ceramic chamber is coated with a TiMo alloy by vacuum evaporation to permit a smooth flow of the RF wall current. Other suitable aluminum alloy components, including fittings, feedthroughs, gauges, optical windows, sputter ion pumps, turbomolecular pumps, and valves have been developed; their fabrication is described

Solar system sputtering

Science.gov (United States)

Tombrello, T. A.

1982-01-01

The sites and materials involved in solar system sputtering of planetary surfaces are reviewed, together with existing models for the processes of sputtering. Attention is given to the interaction of the solar wind with planetary atmospheres in terms of the role played by the solar wind in affecting the He-4 budget in the Venus atmosphere, and the erosion and differentiation of the Mars atmosphere by solar wind sputtering. The study is extended to the production of isotopic fractionation and anomalies in interplanetary grains by irradiation, and to erosion effects on planetary satellites with frozen volatile surfaces, such as with Io, Europa, and Ganymede. Further measurements are recommended of the molecular form of the ejected material, the yields and energy spectra of the sputtered products, the iosotopic fractionation sputtering causes, and the possibility of electronic sputtering enhancement with materials such as silicates.

Characterization of selective solar absorber under high vacuum.

Science.gov (United States)

Russo, Roberto; Monti, Matteo; di Giamberardino, Francesco; Palmieri, Vittorio G

2018-05-14

Total absorption and emission coefficients of selective solar absorbers are measured under high vacuum conditions from room temperature up to stagnation temperature. The sample under investigation is illuminated under vacuum @1000W/m 2 and the sample temperature is recorded during heat up, equilibrium and cool down. During stagnation, the absorber temperature exceeds 300°C without concentration. Data analysis allows evaluating the solar absorptance and thermal emittance at different temperatures. These in turn are useful to predict evacuated solar panel performances at operating conditions.

High temperature high vacuum creep testing facilities

International Nuclear Information System (INIS)

Matta, M.K.

1985-01-01

Creep is the term used to describe time-dependent plastic flow of metals under conditions of constant load or stress at constant high temperature. Creep has an important considerations for materials operating under stresses at high temperatures for long time such as cladding materials, pressure vessels, steam turbines, boilers,...etc. These two creep machines measures the creep of materials and alloys at high temperature under high vacuum at constant stress. By the two chart recorders attached to the system one could register time and temperature versus strain during the test . This report consists of three chapters, chapter I is the introduction, chapter II is the technical description of the creep machines while chapter III discuss some experimental data on the creep behaviour. Of helium implanted stainless steel. 13 fig., 3 tab

Sputtering and inelastic processes

International Nuclear Information System (INIS)

Baranov, I.A.; Tsepelevic, S.O.

1987-01-01

Experimental data and models of a new type of material sputtering with ions of relatively high energies due to inelastic (electron) processes are reviewed. This area of investigations began to develop intensively during the latest years. New experimental data of the authors on differential characteristics of ultradisperse gold and americium dioxide layers with fission fragments are given as well. Practical applications of the new sputtering type are considered as well as setup of possibl experiments at heavy multiply charged ion accelerators

Influence of a high vacuum on the precise positioning using an ultrasonic linear motor.

Science.gov (United States)

Kim, Wan-Soo; Lee, Dong-Jin; Lee, Sun-Kyu

2011-01-01

This paper presents an investigation of the ultrasonic linear motor stage for use in a high vacuum environment. The slider table is driven by the hybrid bolt-clamped Langevin-type ultrasonic linear motor, which is excited with its different modes of natural frequencies in both lateral and longitudinal directions. In general, the friction behavior in a vacuum environment becomes different from that in an environment of atmospheric pressure and this difference significantly affects the performance of the ultrasonic linear motor. In this paper, to consistently provide stable and high power of output in a high vacuum, frequency matching was conducted. Moreover, to achieve the fine control performance in the vacuum environment, a modified nominal characteristic trajectory following control method was adopted. Finally, the stage was operated under high vacuum condition, and the operating performances were investigated compared with that of a conventional PI compensator. As a result, robustness of positioning was accomplished in a high vacuum condition with nanometer-level accuracy.

Influence of a high vacuum on the precise positioning using an ultrasonic linear motor

International Nuclear Information System (INIS)

Kim, Wan-Soo; Lee, Dong-Jin; Lee, Sun-Kyu

2011-01-01

This paper presents an investigation of the ultrasonic linear motor stage for use in a high vacuum environment. The slider table is driven by the hybrid bolt-clamped Langevin-type ultrasonic linear motor, which is excited with its different modes of natural frequencies in both lateral and longitudinal directions. In general, the friction behavior in a vacuum environment becomes different from that in an environment of atmospheric pressure and this difference significantly affects the performance of the ultrasonic linear motor. In this paper, to consistently provide stable and high power of output in a high vacuum, frequency matching was conducted. Moreover, to achieve the fine control performance in the vacuum environment, a modified nominal characteristic trajectory following control method was adopted. Finally, the stage was operated under high vacuum condition, and the operating performances were investigated compared with that of a conventional PI compensator. As a result, robustness of positioning was accomplished in a high vacuum condition with nanometer-level accuracy.

Sputtering materials for VLSI and thin film devices

CERN Document Server

Sarkar, Jaydeep

2010-01-01

An important resource for students, engineers and researchers working in the area of thin film deposition using physical vapor deposition (e.g. sputtering) for semiconductor, liquid crystal displays, high density recording media and photovoltaic device (e.g. thin film solar cell) manufacturing. This book also reviews microelectronics industry topics such as history of inventions and technology trends, recent developments in sputtering technologies, manufacturing steps that require sputtering of thin films, the properties of thin films and the role of sputtering target performance on overall p

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Toçoğlu, Ubeyd, E-mail: utocoglu@sakarya.edu.tr; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-12-15

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Electrochemical characterization of silicon/graphene/MWCNT hybrid lithium-ion battery anodes produced via RF magnetron sputtering

International Nuclear Information System (INIS)

Toçoğlu, Ubeyd; Hatipoğlu, Gizem; Alaf, Miraç; Kayış, Fuat; Akbulut, Hatem

2016-01-01

Graphical abstract: Silicon/graphene/MWCNT hybrid composite anodes were produced via RF magnetron sputtering technique. CR2016 type coin cells were assembled for electrochemical characterization of anodes. Electrochemical characterizations of anodes were conducted via galvanostatic charge/discharge, cyclic voltammetry and electrochemical impedance spectroscopy techniques. - Highlights: • Silicon/graphene/MWCNT hybrid negative lithium ion battery anodes were produced via magnetron sputtering. • Structural and electrochemical characterizations of composite anodes were conducted comprehensively. • The capacity values exhibited by composite anodes were found to be almost more than two times compared to thin film anodes after 100 cycles. - Abstract: In this study it was aimed to enhance cycling performance of silicon lithium ion battery anodes via producing flexible Silicon/Graphene/MWCNT composite structures. The volumetric expansions, which are the primary obstacle that hinders the practical usage of silicon anodes, were tried to suppress using flexible graphene/MWCNT paper substrates. Moreover to achieve lightweight and high electrical conductive anodes, the advantage of graphene was aimed to be exploited. Silicon/graphene/MWCNT flexible composite anodes were produced via radio frequency (RF) magnetron sputtering technique. Graphene/MWCNT papers were produced with vacuum filtration technique as substrate for sputtering process. At coating process of papers constant sputtering power was applied. Phase analysis was conducted with X-ray diffraction (XRD) technique and Raman spectroscopy. Field emission scanning electron microscopy (FESEM). Cyclic voltammetry (CV) tests were carried out to reveal reversible reactions between silicon and lithium. Galvanostatic charge/discharge technique was employed to determine the cyclic performance of anodes. Electrochemical impedance spectroscopy technique was used to understand the relation between cyclic performance and

Ultrahigh vacuum dc magnetron sputter-deposition of epitaxial Pd(111)/Al2O3(0001) thin films.

Science.gov (United States)

Aleman, Angel; Li, Chao; Zaid, Hicham; Kindlund, Hanna; Fankhauser, Joshua; Prikhodko, Sergey V; Goorsky, Mark S; Kodambaka, Suneel

2018-05-01

Pd(111) thin films, ∼245 nm thick, are deposited on Al 2 O 3 (0001) substrates at ≈0.5 T m , where T m is the Pd melting point, by ultrahigh vacuum dc magnetron sputtering of Pd target in pure Ar discharges. Auger electron spectra and low-energy electron diffraction patterns acquired in situ from the as-deposited samples reveal that the surfaces are compositionally pure 111-oriented Pd. Double-axis x-ray diffraction (XRD) ω-2θ scans show only the set of Pd 111 peaks from the film. In triple-axis high-resolution XRD, the full width at half maximum intensity Γ ω of the Pd 111 ω-rocking curve is 630 arc sec. XRD 111 pole figure obtained from the sample revealed six peaks 60°-apart at a tilt angles corresponding to Pd 111 reflections. XRD ϕ scans show six 60°-rotated 111 peaks of Pd at the same ϕ angles for 11[Formula: see text]3 of Al 2 O 3 based on which the epitaxial crystallographic relationships between the film and the substrate are determined as [Formula: see text]ǁ[Formula: see text] with two in-plane orientations of [Formula: see text]ǁ[Formula: see text] and [Formula: see text]ǁ[Formula: see text]. Using triple axis symmetric and asymmetric reciprocal space maps, interplanar spacings of out-of-plane (111) and in-plane (11[Formula: see text]) are found to be 0.2242 ± 0.0003 and 0.1591 ± 0.0003 nm, respectively. These values are 0.18% lower than 0.2246 nm for (111) and the same, within the measurement uncertainties, as 0.1588 nm for (11[Formula: see text]) calculated from the bulk Pd lattice parameter, suggesting a small out-of-plane compressive strain and an in-plane tensile strain related to the thermal strain upon cooling the sample from the deposition temperature to room temperature. High-resolution cross-sectional transmission electron microscopy coupled with energy dispersive x-ray spectra obtained from the Pd(111)/Al 2 O 3 (0001) samples indicate that the Pd-Al 2 O 3 interfaces are essentially atomically abrupt and

Computer simulation of scattered ion and sputtered species effects in ion beam sputter-deposition of high temperature superconducting thin films

International Nuclear Information System (INIS)

Krauss, A.R.; Auciello, O.

1992-01-01

Ion beam sputter-deposition is a technique currently used by many groups to produce single and multicomponent thin films. This technique provides several advantages over other deposition methods, which include the capability for yielding higher film density, accurate stoichiometry control, and smooth surfaces. However, the relatively high kinetic energies associated with ion beam sputtering also lead to difficulties if the process is not properly controlled. Computer simulations have been performed to determine net deposition rates, as well as the secondary erosion, lattice damage, and gas implantation in the films, associated with primary ions scattered from elemental Y, Ba and Cu targets used to produce high temperature superconducting Y-Ba-Cu-O films. The simulations were performed using the TRIM code for different ion masses and kinetic energies, and different deposition geometries. Results are presented for primary beams of Ar + , Kr + and Xe + incident on Ba and Cu targets at 0 degrees and 45 degrees with respect to the surface normal, with the substrate positioned at 0 degrees and 45 degrees. The calculations indicate that the target composition, mass and kinetic energy of the primary beam, angle of incidence on the target, and position and orientation of the substrate affect the film damage and trapped primary beam gas by up to 5 orders of magnitude

Vacuum surface flashover and high pressure gas streamers

International Nuclear Information System (INIS)

Elizondo, J.M.; Krogh, M.L.; Smith, D.; Stolz, D.; Wright, S.N.

1997-07-01

Pre-breakdown current traces obtained during high pressure gas breakdown and vacuum surface flashover show similar signatures. The initial pre-breakdown current spike, a flat constant current phase, and the breakdown phase with voltage collapse and current surge differ mostly in magnitude. Given these similarities, a model, consisting of the initial current spike corresponding to a fast precursor streamer (ionization wave led by a photoionizing front), the flat current stage as the heating or glow phase, and the terminal avalanche and gap closure, is applied to vacuum surface flashover. A simple analytical approximation based on the resistivity changes induced in the vacuum and dielectric surface is presented. The approximation yields an excellent fit to pre-breakdown time delay vs applied field for previously published experimental data. A detailed kinetics model that includes surface and gas contributions is being developed based in the initial approximation

Fast-opening vacuum switches for high-power inductive energy storage

International Nuclear Information System (INIS)

Cooperstein, G.

1988-01-01

The subject of fast-opening vacuum switches for high-power inductive energy storage is emerging as an exciting new area of plasma science research. This opening switch technology, which generally involves the use of plasmas as the switching medium, is key to the development of inductive energy storage techniques for pulsed power which have a number of advantages over conventional capacitive techniques with regard to cost and size. This paper reviews the state of the art in this area with emphasis on applications to inductive storage pulsed power generators. Discussion focuses on fast-opening vacuum switches capable of operating at high power (≥10 12 W). These include plasma erosion opening switches, ion beam opening switches, plasma filled diodes, reflex diodes, plasma flow switches, and other novel vacuum opening switches

Substantial difference in target surface chemistry between reactive dc and high power impulse magnetron sputtering

Science.gov (United States)

Greczynski, G.; Mráz, S.; Schneider, J. M.; Hultman, L.

2018-02-01

The nitride layer formed in the target race track during the deposition of stoichiometric TiN thin films is a factor 2.5 thicker for high power impulse magnetron sputtering (HIPIMS), compared to conventional dc processing (DCMS). The phenomenon is explained using x-ray photoelectron spectroscopy analysis of the as-operated Ti target surface chemistry supported by sputter depth profiles, dynamic Monte Carlo simulations employing the TRIDYN code, and plasma chemical investigations by ion mass spectrometry. The target chemistry and the thickness of the nitride layer are found to be determined by the implantation of nitrogen ions, predominantly N+ and N2+ for HIPIMS and DCMS, respectively. Knowledge of this method-inherent difference enables robust processing of high quality functional coatings.

Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

International Nuclear Information System (INIS)

Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L; Joshi, L M; Nangru, S C

2010-01-01

A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

Development of multi-channel high power rectangular RF window for LHCD system employing high temperature vacuum brazing technique

Energy Technology Data Exchange (ETDEWEB)

Sharma, P K; Ambulkar, K K; Parmar, P R; Virani, C G; Thakur, A L [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India); Joshi, L M; Nangru, S C, E-mail: pramod@ipr.res.i [Central Electronics Engineering Research Institute, Pilani, Rajasthan 333 031 (India)

2010-02-01

A 3.7 GHz., 120 kW (pulsed), lower hybrid current drive (LHCD) system is employed to drive non-inductive plasma current in ADITYA tokamak. The rf power is coupled to the plasma through grill antenna and is placed in vacuum environment. A vacuum break between the pressurized transmission line and the grill antenna is achieved with the help of a multi (eight) channel rectangular RF vacuum window. The phasing between adjacent channels of 8-channel window (arranged in two rows) is important for launching lower hybrid waves and each channel should have independent vacuum window so that phase information is retained. The geometrical parameter of the grill antenna, like periodicity (9mm), channel dimensions (cross sectional dimension of 76mm x 7mm), etc. is to be maintained. These design constraint demanded a development of a multi channel rectangular RF vacuum window. To handle rf losses and thermal effects, high temperature vacuum brazing techniques is desired. Based on the above requirements we have successfully developed a multi channel rectangular rf vacuum window employing high temperature vacuum brazing technique. During the development process we could optimize the chemical processing parameters, brazing process parameters, jigs and fixtures for high temperature brazing and leak testing, etc. Finally the window is tested for low power rf performance using VNA. In this paper we would present the development of the said window in detail along with its mechanical, vacuum and rf performances.

Determining the mode of high voltage breakdowns in vacuum devices

International Nuclear Information System (INIS)

Miller, H.C.; Furno, E.J.; Sturtz, J.P.

1980-01-01

Devices were constructed which were essentially vacuum diodes equipped with windows allowing observation of high voltage breakdowns. The waveform of the applied voltage was photographed, and the x-ray output was monitored to investigate electrical breakdown in these vacuum diodes. Results indicate that breakdowns may be divided into two types: (1) vacuum (interelectrode) breakdown - characterized by a diffuse moderately bright discharge, a relative slow and smooth voltage collapse, and a large burst of x-rays, and (2) surface (insulator) flashover - characterized by a bright discharge with a very bright filamentary core, a relatively fast and noisy voltage collapse and no x-ray burst. Useful information concerning the type of breakdown in a vacuum device can be obtained by monitoring the voltage (current) waveform and the x-ray output

A review of the use of Al-alloy vacuum components for operation at 10-13 Torr

Science.gov (United States)

Ishimaru, Hajime

1990-02-01

An extremely high vacuum (XHV) chamber was fabricated and tested. The vacuum chamber was made of special surface finished (EX-process) aluminum alloy in oxygen and argon atmosphere. The chamber was assembled using TIG welding in an argon atmosphere and by electron beam welding. The system was evacuated with a turbo-backed 300 l/s turbomolecular pump separated from the main chamber using a right angle valve. The liquid nitrogen shroud is installed inside the main vacuum chamber. The XHV is maintained by two 300 l/s sputter ion pumps and a titanium sublimation pump with a liquid nitrogen shroud. These pumps are also made of aluminum alloys. An ultimate pressure of 3×10-13 Torr was measured with a point collector gauge with a spherical anode mounted on an Al-flange. Residual gas analysis in the order 10-13 Torr was performed by a newly developed Q-mass filter. To suppress outgassing from the quadrupole electrode, the ion source is mounted on an Al-flange separated from the quadrupole electrode.

Imaging with Mass Spectrometry: A SIMS and VUV-Photoionization Study of Ion-Sputtered Atoms and Clusters from GaAs and Au

Energy Technology Data Exchange (ETDEWEB)

Takahashi, Lynelle; Zhou, Jia; Wilson, Kevin R.; Leone, Stephen R.; Ahmed, Musahid

2008-12-05

A new mass spectrometry surface imaging method is presented in which ion-sputtered neutrals are postionized by wavelength-tunable vacuum ultraviolet (VUV) light from a synchrotron source. Mass spectra and signal counts of the photoionized neutrals from GaAs (100) and Au are compared to those of the secondary ions. While clusters larger than dimers are more efficiently detected as secondary ions, certain species, such as As2, Au and Au2, are more efficiently detected through the neutral channel. Continuously tuning the photon wavelength allows photoionization efficiency (PIE) curves to be obtained for sputtered Asm (m=1,2) and Aun (n=1-4). From the observed ionization thresholds, sputtered neutral As and Au show no clear evidence of electronic excitation, while neutral clusters have photoionization onsets shifted to lower energies by ~;;0.3 eV. These shifts are attributed to unresolved vibrational and rotational excitations. High-spatial resolution chemical imaging with synchrotron VUV postionization is demonstrated at two different photon energies using a copper TEM grid embedded in indium. The resulting images are used to illustrate the use of tunable VUV light for verifying mass peak assignments by exploiting the unique wavelength-dependent PIE of each sputtered neutral species. This capability is valuable for identifying compounds when imaging chemically complex systems with mass spectrometry-based techniques.

Laser sputter neutral mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

King, B.V.; Clarke, M.; Hu, H.; Betz [Newcastle Univ., NSW (Australia). Dept. of Physics

1993-12-31

Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

Laser sputter neutral mass spectrometry

Energy Technology Data Exchange (ETDEWEB)

King, B V; Clarke, M; Hu, H; Betz, [Newcastle Univ., NSW (Australia). Dept. of Physics

1994-12-31

Laser sputter neutral mass spectrometry (LSNMS) is an emerging technique for highly sensitive surface analysis. In this technique a target is bombarded with a pulsed beam of keV ions. The sputtered particles are intercepted by a high intensity pulsed laser beam above the surface and ionised with almost 100% efficiency. The photions may then be mass analysed using a quadrupole or, more commonly, using time of flight (TOF) techniques. In this method photoions are extracted from the ionisation region, accelerated to a known energy E{sub o} and strike a channelplate detector a distance `d` away. The flight time `t` of the photoions is then related to their mass by `d` {radical}m / {radical} 2E{sub o} so measurement of `t` allows mass spectra to be obtained. It is found that LSNMS is an emerging technique of great sensitivity and flexibility, useful for both applied analysis and to investigate basic sputtering processes. 4 refs., 3 figs.

High frequency pulse anodising of magnetron sputtered Al–Zr and Al–Ti Coatings

DEFF Research Database (Denmark)

Gudla, Visweswara Chakravarthy; Bordo, Kirill; Engberg, Sara

2016-01-01

High frequency pulse anodising of Al–Zr and Al–Ti coatings is studied as a surface finishing technique and compared to conventional decorative DC anodising. The Al–Zr and Al–Ti coatings were deposited using DC magnetron sputtering and were heat treated after deposition to generate a multiphase mi...

Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

Energy Technology Data Exchange (ETDEWEB)

Kim, Yonggi; Kim, Bomsok; Lee, Jaesang [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

2013-05-15

Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances.

Preliminary results on adhesion improvement using Ion Beam Sputtering Deposition

International Nuclear Information System (INIS)

Kim, Yonggi; Kim, Bomsok; Lee, Jaesang

2013-01-01

Sputtering is an established technique for depositing films with smooth surfaces and interfaces and good thick control. Ejection of articles from a condensed matter due to impingement of high energy particles, termed as sputtering was observed as early as in 1852, however, it is only recently that the complex process of sputtering system. Coating adhesion and environmental stability of the ion beam sputtering deposition coatings performed very well. High-energy high-current ion beam thin film synthesis of adhesion problems can be solved by using. Enhancement of adhesion in thin film synthesis, using high energy and high current ion beam, of mobile phones, car parts and other possible applications in the related industry Alternative technology of wet chrome plating, considering environment and unit cost, for car parts and esthetic improvement on surface of domestic appliances

Visible-light active thin-film WO3 photocatalyst with controlled high-rate deposition by low-damage reactive-gas-flow sputtering

Directory of Open Access Journals (Sweden)

Nobuto Oka

2015-10-01

Full Text Available A process based on reactive gas flow sputtering (GFS for depositing visible-light active photocatalytic WO3 films at high deposition rates and with high film quality was successfully demonstrated. The deposition rate for this process was over 10 times higher than that achieved by the conventional sputtering process and the process was highly stable. Furthermore, Pt nanoparticle-loaded WO3 films deposited by the GFS process exhibited much higher photocatalytic activity than those deposited by conventional sputtering, where the photocatalytic activity was evaluated by the extent of decomposition of CH3CHO under visible light irradiation. The decomposition time for 60 ppm of CH3CHO was 7.5 times more rapid on the films deposited by the GFS process than on the films deposited by the conventional process. During GFS deposition, there are no high-energy particles bombarding the growing film surface, whereas the bombardment of the surface with high-energy particles is a key feature of conventional sputtering. Hence, the WO3 films deposited by GFS should be of higher quality, with fewer structural defects, which would lead to a decrease in the number of centers for electron-hole recombination and to the efficient use of photogenerated holes for the decomposition of CH3CHO.

Preparation of atomically clean and flat Si(1 0 0) surfaces by low-energy ion sputtering and low-temperature annealing

International Nuclear Information System (INIS)

Kim, J.C.; Ji, J.-Y.; Kline, J.S.; Tucker, J.R.; Shen, T.-C.

2003-01-01

Si(1 0 0) surfaces were prepared by wet-chemical etching followed by 0.3-1.5 keV Ar ion sputtering, either at elevated or room temperature (RT). After a brief anneal under ultrahigh vacuum (UHV) conditions, the resulting surfaces were examined by scanning tunneling microscopy. We find that wet-chemical etching alone cannot produce a clean and flat Si(1 0 0) surface. However, subsequent 300 eV Ar ion sputtering at room temperature followed by a 700 deg. C anneal yields atomically clean and flat Si(1 0 0) surfaces suitable for nanoscale device fabrication

Co-sputtered optical films

Energy Technology Data Exchange (ETDEWEB)

Misiano, C; Simonetti, E [Selenia S.p.A., Rome (Italy)

1977-06-01

The co-sputtering of two dielectric materials with indices of refraction as widely different as possible has been investigated with the aim of obtaining both homogeneous films with an intermediate index of refraction and inhomogeneous films with predetermined profiles. An rf sputtering module is described which has been especially designed, with two separate cathodes and two independent tunable rf generators. The substrates are placed on a circular anode rotating underneath the two cathodes. So far mainly CeO/sub 2/, TiO2 and SiO/sub 2/ targets have been used. The deposition rate from each cathode and the total film thickness are determined by means of two quartz thickness monitors, sputtering compatible. Values obtained for the refractive index and optical thickness are reported, as well as repeatability, mechanical and chemical characteristics, reliability and high power optical radiation resistance. Finally, results obtained on optical components of practical interest are discussed.

Cermet insert high voltage holdoff improvement for ceramic/metal vacuum devices

Science.gov (United States)

Ierna, W.F.

1986-03-11

An improved metal-to-ceramic seal is provided wherein the ceramic body of the seal contains an integral region of cermet material in electrical contact with the metallic member, e.g., an electrode, of the seal. The seal is useful in high voltage vacuum devices, e.g., vacuum switches, and increases the high-voltage holdoff capabilities of such devices. A method of fabricating such seals is also provided.

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

Science.gov (United States)

He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

2017-12-13

It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

Strong charge state dependence of H+ and H2+ sputtering induced by slow highly charged ions

International Nuclear Information System (INIS)

Kakutani, N.; Azuma, T.; Yamazaki, Y.; Komaki, K.; Kuroki, K.

1995-01-01

Secondary ion emission has been studied for very slow ( similar 0.01ν B ) highly charged Ar and N ions bombarding C 60 containing hydrogen as an impurity. It is found that the fragmentations of C 60 are very rare even for Ar 16+ bombardments. On the other hand, the sputtering of H + and H 2 + has been observed to increase drastically as a function of incident charge q like q γ (e.g., γ similar 4.6 for H + sputtering by 500 eV Ar q+ ). (orig.)

Novel high power impulse magnetron sputtering enhanced by an auxiliary electrical field

Energy Technology Data Exchange (ETDEWEB)

Li, Chunwei, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [College of Engineering and Technology, Northeast Forestry University, Harbin 150040 (China); State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China); Tian, Xiubo, E-mail: lcwnefu@126.com, E-mail: xiubotian@163.com [State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001 (China)

2016-08-15

The high power impulse magnetron sputtering (HIPIMS) technique is a novel highly ionized physical vapor deposition method with a high application potential. However, the electron utilization efficiency during sputtering is rather low and the metal particle ionization rate needs to be considerably improved to allow for a large-scale industrial application. Therefore, we enhanced the HIPIMS technique by simultaneously applying an electric field (EF-HIPIMS). The effect of the electric field on the discharge process was studied using a current sensor and an optical emission spectrometer. Furthermore, the spatial distribution of the electric potential and electric field during the EF-HIPIMS process was simulated using the ANSYS software. The results indicate that a higher electron utilization efficiency and a higher particle ionization rate could be achieved. The auxiliary anode obviously changed the distribution of the electric potential and the electric field in the discharge region, which increased the plasma density and enhanced the degree of ionization of the vanadium and argon gas. Vanadium films were deposited to further compare both techniques, and the morphology of the prepared films was investigated by scanning electron microscopy. The films showed a smaller crystal grain size and a denser growth structure when the electric field was applied during the discharge process.

The improvement of all-solid-state electrochromic devices fabricated with the reactive sputter and cathodic arc technology

Directory of Open Access Journals (Sweden)

Min-Chuan Wang

2016-11-01

Full Text Available The all-solid-state electrochromic device (ECD with the one substrate structure fabricated by the reactive dc magnetron sputtering (DCMS and cathodic vacuum arc plasma (CVAP technology has been developed for smart electrochromic (EC glass application. The EC layer and ion conductor layer were deposited by reactive DCMS and CVAP technology, respectively. The ion conductor layer Ta2O5 deposited by the CVAP technology has provided the better porous material structure for ion transportation and showed 1.76 times ion conductivity than devices with all sputtering process. At the same time, the EC layer WO3 and NiO deposited by the reactive DCMS have also provided the high quality and uniform characteristic to overcome the surface roughness effect of the CVAP ion conductor layer in multilayer device structure. The all-solid-state ECD with the CVAP ion conductor layer has demonstrated a maximum transmittance variation (ΔT of 55% at 550nm and a faster-switching speed. Furthermore, the lower equipment cost and higher deposition rate could be achieved by the application of CVAP technology.

Application of high speed photography for high current vacuum arcs

NARCIS (Netherlands)

Damstra, G.C.; Merck, W.F.H.; Vossen, J.W.G.L.; Janssen, M.F.P.; Bouwmeester, C.E.

1998-01-01

A high speed image detection system for 106 frames per second or 107 streaks per second has been developed for the testing of vacuum circuit breakers, using 10×16 optical fibres for light transfer to 160 fast photo diodes. The output of these diodes is multiplexed, AD converted in a 4 bit

Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

Science.gov (United States)

Lee, Hyun-Woo; Cho, Won-Ju

2018-01-01

We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

Formation of large clusters during sputtering of silver

International Nuclear Information System (INIS)

Staudt, C.; Heinrich, R.; Wucher, A.

2000-01-01

We have studied the formation of polyatomic clusters during sputtering of metal surfaces by keV ion bombardment. Both positively charged (secondary cluster ions) and neutral clusters have been detected in a time-of-flight mass spectrometer under otherwise identical experimental conditions, the sputtered neutrals being post-ionized by single photon absorption using a pulsed 157 nm VUV laser beam. Due to the high achievable laser intensity, the photoionization of all clusters could be saturated, thus enabling a quantitative determination of the respective partial sputtering yields. We find that the relative yield distributions of sputtered clusters are strongly correlated with the total sputtering yield in a way that higher yields lead to higher abundances of large clusters. By using heavy projectile ions (Xe + ) in connection with bombarding energies up to 15 keV, we have been able to detect sputtered neutral silver clusters containing up to about 60 atoms. For cluster sizes above 40 atoms, doubly charged species are shown to be produced in the photoionization process with non-negligible efficiency. From a direct comparison of secondary neutral and ion yields, the ionization probability of sputtered clusters is determined as a function of the cluster size. It is demonstrated that even the largest silver clusters are still predominantly sputtered as neutrals

Experimental and numerical study of the chemical composition of WSex thin films obtained by pulsed laser deposition in vacuum and in a buffer gas atmosphere

International Nuclear Information System (INIS)

Grigoriev, S.N.; Fominski, V.Yu.; Gnedovets, A.G.; Romanov, R.I.

2012-01-01

WSe x thin films were obtained by pulsed laser deposition in vacuum and at various Ar gas pressures up to 10 Pa. Stoichiometry and chemical state of the WSe x films were studied by means of Rutherford backscattering spectrometry and X-ray photoelectron spectroscopy. In the case of pulsed laser deposition of WSe x films in vacuum the value of stoichiometric coefficient x was 1.3. During the deposition in argon at pressures of 2-10 Pa the value of x varied from 1.5 to 2.2. To explain the influence of the buffer gas, a model was used that takes into account the following processes: (1) congruent pulsed laser evaporation of the WSe 2.2 target; (2) scattering of laser-evaporated W and Se atoms in Ar; (3) sputtering of the deposited film by high-energy atoms from the laser plume. Experimentally, the velocity distributions of laser-evaporated W and Se atoms in vacuum were determined by the time-of-flight measurements. Collision Monte Carlo simulations were used to quantify the impact of the buffer gas on the energy and the incidence angle distributions of the deposited W and Se atoms. Model distributions were used to determine the chemical composition of the WSe x films, depending on the efficiency of the preferential sputtering of Se atoms.

Modelling of low energy ion sputtering from oxide surfaces

International Nuclear Information System (INIS)

Kubart, T; Nyberg, T; Berg, S

2010-01-01

The main aim of this work is to present a way to estimate the values of surface binding energy for oxides. This is done by fitting results from the binary collisions approximation code Tridyn with data from the reactive sputtering processing curves, as well as the elemental composition obtained from x-ray photoelectron spectroscopy (XPS). Oxide targets of Al, Ti, V, Nb and Ta are studied. The obtained surface binding energies are then used to predict the partial sputtering yields. Anomalously high sputtering yield is observed for the TiO 2 target. This is attributed to the high sputtering yield of Ti lower oxides. Such an effect is not observed for the other studied metals. XPS measurement of the oxide targets confirms the formation of suboxides during ion bombardment as well as an oxygen deficient surface in the steady state. These effects are confirmed from the processing curves from the oxide targets showing an elevated sputtering rate in pure argon.

Probing the vacuum with highly charged ions

International Nuclear Information System (INIS)

Bottcher, C.; Strayer, M.R.

1987-01-01

The physics of the Fermion vacuum is briefly described, and applied to pair production in heavy ion collisions. We consider in turn low energies (<50 MeV/nucleon), intermediate energies (<5 GeV/nucleon), and ultrahigh energies such as would be produced in a ring collider. At high energies, interesting questions of Lorentz and gauge invariance arise. Finally, some applications to the structure of high Z atoms are examined. 14 refs., 11 figs

Heavy particle transport in sputtering systems

Science.gov (United States)

Trieschmann, Jan

2015-09-01

This contribution aims to discuss the theoretical background of heavy particle transport in plasma sputtering systems such as direct current magnetron sputtering (dcMS), high power impulse magnetron sputtering (HiPIMS), or multi frequency capacitively coupled plasmas (MFCCP). Due to inherently low process pressures below one Pa only kinetic simulation models are suitable. In this work a model appropriate for the description of the transport of film forming particles sputtered of a target material has been devised within the frame of the OpenFOAM software (specifically dsmcFoam). The three dimensional model comprises of ejection of sputtered particles into the reactor chamber, their collisional transport through the volume, as well as deposition of the latter onto the surrounding surfaces (i.e. substrates, walls). An angular dependent Thompson energy distribution fitted to results from Monte-Carlo simulations is assumed initially. Binary collisions are treated via the M1 collision model, a modified variable hard sphere (VHS) model. The dynamics of sputtered and background gas species can be resolved self-consistently following the direct simulation Monte-Carlo (DSMC) approach or, whenever possible, simplified based on the test particle method (TPM) with the assumption of a constant, non-stationary background at a given temperature. At the example of an MFCCP research reactor the transport of sputtered aluminum is specifically discussed. For the peculiar configuration and under typical process conditions with argon as process gas the transport of aluminum sputtered of a circular target is shown to be governed by a one dimensional interaction of the imposed and backscattered particle fluxes. The results are analyzed and discussed on the basis of the obtained velocity distribution functions (VDF). This work is supported by the German Research Foundation (DFG) in the frame of the Collaborative Research Centre TRR 87.

Impedimetric Thiourea Sensing in Copper Electrorefining Bath based on DC Magnetron Sputtered Nanosilver as Highly Uniform Transducer

International Nuclear Information System (INIS)

Mozaffari, S.A.; Amoli, H. Salar; Simorgh, S.; Rahmanian, R.

2015-01-01

Highlights: • Fabrication of a novel disposable impedimetric thiourea sensor based on nanostructured Ag film transducer. • Exploiting sputtering as a high-tech method for preparation of highly uniform nanostructured Ag film. • A wonderful combination of nanostructured Ag film and carbon paper substrate as remarkably stable and reproducible sensor for thiourea detection in copper electrorefining bath. • Application of impedimetric assessment for thiourea monitoring due to its rapidity, sensitivity, and repeatability. - Abstract: Highly uniform sputtered nanostructured silver (Nano-Ag) film on the conductive carbon paper (CP) substrate (Nano-Ag/CP) was applied as a novel approach for thiourea (TU) measurement in copper electrorefining bath. Nano-Ag film was achieved by direct current (DC) magnetron sputtering system at the optimized instrumental deposition conditions. Characterization of the surface structure of Nano-Ag film by field emission-scanning electron microscopy (FE-SEM), exhibits uniform Nano-Ag film as an effective transducer for TU sensing. Step by step monitoring of Nano-Ag/CP electrode fabrication were performed using electrochemical methods such as cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) techniques. Fabricated Nano-Ag/CP electrode was used for TU determination using EIS assessment. The impedimetric results show high sensitivity for TU sensing within 2.0–250 ppm.

Sputtering of water ice

International Nuclear Information System (INIS)

Baragiola, R.A.; Vidal, R.A.; Svendsen, W.; Schou, J.; Shi, M.; Bahr, D.A.; Atteberrry, C.L.

2003-01-01

We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from the decay of H(2p) atoms sputtered by heavy ion impact, but not bulk ice luminescence. Radiolyzed ice does not sputter under 3.7 eV laser irradiation

Electronic sputtering

International Nuclear Information System (INIS)

Johnson, R.E.

1989-01-01

Electronic sputtering covers a range of phenomena from electron and photon stimulated desorption from multilayers to fast heavy ion-induced desorption (sputtering) of biomolecules. In this talk the author attempted. Therefore, to connect the detailed studies of argon ejection from solid argon by MeV ions and keV electrons to the sputtering of low temperatures molecular ices by MeV ions then to biomolecule ejection from organic solids. These are related via changing (dE/dx) e , molecular size, and transport processes occurring in materials. In this regard three distinct regions of (dE/dx) e have been identified. Since the talk this picture has been made explicit using a simple spike model for individual impulsive events in which spike interactions are combined linearly. Since that time also the molecular dynamics programs (at Virginia and Uppsala) have quantified both single atom and dimer processes in solid Ar and the momentum transport in large biomolecule sputtering. 5 refs

Experimental research for vacuum gap breakdown in high voltage multi-pulse

International Nuclear Information System (INIS)

Huang Ziping; He Jialong; Chen Sifu; Deng Jianjun; Wang Liping

2008-01-01

Base on the breakdown theory of vacuum gaps, experiments have been done to find out the breakdown electric field intensities in high voltage single-and triple-pulse for 26 vacuum gaps with different shapes. The experimental results match up to the theory and confirm the effect of the pulse-number increase on the breakdown electric field intensity. The key point to decide the macroscopical breakdown electric field intensity of a vacuum gap has been pointed out with some advises about the design of a multi-pulse linear inductive accelerator's accelerate gap. (authors)

Reactive sputter deposition

CERN Document Server

Mahieu, Stijn

2008-01-01

In this valuable work, all aspects of the reactive magnetron sputtering process, from the discharge up to the resulting thin film growth, are described in detail, allowing the reader to understand the complete process. Hence, this book gives necessary information for those who want to start with reactive magnetron sputtering, understand and investigate the technique, control their sputtering process and tune their existing process, obtaining the desired thin films.

Leybold vacuum handbook

CERN Document Server

Diels, K; Diels, Kurt

1966-01-01

Leybold Vacuum Handbook presents a collection of data sets that are essential for numerical calculation of vacuum plants and vacuum processes. The title first covers vacuum physics, which includes gas kinetics, flow phenomena, vacuum gauges, and vapor removal. Next, the selection presents data on vacuum, high vacuum process technology, and gas desorption and gettering. The text also deals with materials, vapor pressure, boiling and melting points, and gas permeability. The book will be of great interest to engineers and technicians that deals with vacuum related technologies.

Evaluation of ISABELLE full cell ultra high vacuum system

International Nuclear Information System (INIS)

Foerster, C.L.; Briggs, J.; Chou, T.S.; Stattel, P.

1980-01-01

The ISABELLE Full Cell Vacuum System consisting of a 40 m long, by 8.8 cm diameter stainless steel tube pumped by seven pumping stations was assembled and processed for 10 -12 Torr operation. Evaluation and testing of the system and its sub-assemblies has been completed. Detail design of system components and the determination of the conditioning process was completed. The best procedure to rough pump, leak test, vacuum bake the system, condition pumps, degas gauges, turn on ion pumps and flash sublimation pumps was established. Pressures below 2 x 10 -11 Torr are now routinely achieved in normal operation of the Full Cell. This includes pump down after replacement of various components and pump down after back fill with moist unfiltered air. The techniques developed for the Full Cell will be used to build the ISABELLE Ultra High Vacuum System

Fluence-dependent sputtering yield of micro-architectured materials

Energy Technology Data Exchange (ETDEWEB)

Matthes, Christopher S.R.; Ghoniem, Nasr M., E-mail: ghoniem@ucla.edu; Li, Gary Z.; Matlock, Taylor S.; Goebel, Dan M.; Dodson, Chris A.; Wirz, Richard E.

2017-06-15

Highlights: • Sputtering yield is shown to be transient and heavily dependent on surface architecture. • Fabricated nano- and Microstructures cause geometric re-trapping of sputtered material, which leads to a self-healing mechanism. • Initially, the sputtering yield of micro-architectured Mo is approximately 1/2 the value as that of a planar surface. • The study demonstrates that the sputtering yield is a dynamic property, dependent on the surface structure of a material. • A developed phenomenological model mathematically describes the transient behavior of the sputtering yield as a function of plasma fluence. - Abstract: We present an experimental examination of the relationship between the surface morphology of Mo and its instantaneous sputtering rate as function of low-energy plasma ion fluence. We quantify the dynamic evolution of nano/micro features of surfaces with built-in architecture, and the corresponding variation in the sputtering yield. Ballistic deposition of sputtered atoms as a result of geometric re-trapping is observed, and re-growth of surface layers is confirmed. This provides a self-healing mechanism of micro-architectured surfaces during plasma exposure. A variety of material characterization techniques are used to show that the sputtering yield is not a fundamental property, but that it is quantitatively related to the initial surface architecture and to its subsequent evolution. The sputtering yield of textured molybdenum samples exposed to 300 eV Ar plasma is roughly 1/2 of the corresponding value for flat samples, and increases with ion fluence. Mo samples exhibited a sputtering yield initially as low as 0.22 ± 5%, converging to 0.4 ± 5% at high fluence. The sputtering yield exhibits a transient behavior as function of the integrated ion fluence, reaching a steady-state value that is independent of initial surface conditions. A phenomenological model is proposed to explain the observed transient sputtering phenomenon, and to

Structural and optical properties of zirconia thin films deposited by reactive high-power impulse magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhao, Xiaoli; Jin, Jie [Tianjin University, School of Electronic Information Engineering, Tianjin (China); Cheng, Jui-Ching, E-mail: juiching@ntut.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lee, Jyh-Wei [Ming Chi University of Technology, College of Materials Engineering, New Taipei City, Taiwan (China); Wu, Kuo-Hong [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China); Lin, Kuo-Cheng; Tsai, Jung-Ruey [Asia University, Department of Photonics and Communication Engineering, Taichung, Taiwan (China); Liu, Kou-Chen, E-mail: jacobliu@mail.cgu.edu.tw [Chang-Gung University, Department of Electronics, Taoyuan, Taiwan (China)

2014-11-03

Zirconia films are deposited by reactive high power impulse magnetron sputtering (HiPIMS) technology on glass and indium-tin-oxide (ITO)/glass substrates. Preparation, microstructure and optical characteristics of the films have been studied. During deposition, the influence of the target power and duty cycle on the peak current–voltage and power density has been observed in oxide mode. Transparent thin films under different oxygen proportions are obtained on the two substrates. Atomic force microscopy measurements showed that the surface roughness of the films was lower by reactive HiPIMS than DC sputtering for all oxygen contents. The transmission and reflectance properties of differently grown zirconia films were also investigated using an ultraviolet–visible spectrophotometer. The optical transmittance of films grown on glass substrates by HiPIMS reached maximum values above 90%, which exceeded that by DC sputtering. The band edge near 5.86 eV shifted to a lower wavelength for zirconia films prepared with oxygen flow rates lower than 4.5 sccm. For the films prepared on ITO/glass substrates, the transmittance and the band gap of zirconia films were limited by ITO films; a maximum average transmittance of 84% was obtained at 4.5 sccm O{sub 2} and the energy band gap was in the range of 3.7–3.8 eV for oxygen flow rates ranging from 3.5 to 5.0 sccm. Finally, the electrical properties of zirconia films have also been discussed. - Highlights: • Zirconia films are deposited by reactive high power impulse magnetron sputtering. • Low roughness films are obtained. • Films show a high transmittance (> 90%). • Films prepared on glass have a band gap of 5.9 eV.

Abnormal electrical resistivity in γ-TiAl thin films deposited by magnetron sputtering

International Nuclear Information System (INIS)

Alford, T.L.; Gadre, K.S.; Kim, H.C.; Deevi, S.C.

2003-01-01

Thin films of γ-TiAl are being considered as a potential conductor and/or diffusion barrier for high temperature electronics because of their high melting points and high oxidation resistance. However, it is not possible to form pure γ-TiAl thin films by thermal annealing of Al/Ti bilayers. This study, however, demonstrates the formation of γ-TiAl thin films by dc magnetron sputtering of a compound target. X-ray diffractometry and Rutherford backscattering spectrometry analyses confirm the γ-TiAl phase formation, composition, and thermal stability in vacuum (up to 700 deg. C, 1 h) on SiO 2 . Four-point probe resistivity measurements in vacuum show an initial increase in the resistivity with temperature up to transition temperature for the γ-TiAl thin films. At higher temperatures a decrease in resistivity with additional heating (i.e., negative temperature coefficient of resistivity, TCR) is seen. The values of dρ/dT are typically on the order of -0.32 μΩ cm/ deg. C between 200 and 550 deg. C. At the highest temperature, a minimum value of resistivity of ∼13 μΩ cm is obtained; this value is about one half the value of bulk TiAl at room temperatures. The negative TCR, low resistivity values at high temperatures, and temperature stability are not typically seen in bulk TiAl. This abnormal electrical property is explained using a modified model for a thermally activated polaron-hopping mechanism

Sputtering of sub-micrometer aluminum layers as compact, high-performance, light-weight current collector for supercapacitors

Science.gov (United States)

Busom, J.; Schreiber, A.; Tolosa, A.; Jäckel, N.; Grobelsek, I.; Peter, N. J.; Presser, V.

2016-10-01

Supercapacitors are devices for rapid and efficient electrochemical energy storage and commonly employ carbon coated aluminum foil as the current collector. However, the thickness of the metallic foil and the corresponding added mass lower the specific and volumetric performance on a device level. A promising approach to drastically reduce the mass and volume of the current collector is to directly sputter aluminum on the freestanding electrode instead of adding a metal foil. Our work explores the limitations and performance perspectives of direct sputter coating of aluminum onto carbon film electrodes. The tight and interdigitated interface between the metallic film and the carbon electrode enables high power handling, exceeding the performance and stability of a state-of-the-art carbon coated aluminum foil current collector. In particular, we find an enhancement of 300% in specific power and 186% in specific energy when comparing aluminum sputter coated electrodes with conventional electrodes with Al current collectors.

Functional aluminum alloys for ultra high vacuum use

International Nuclear Information System (INIS)

Kato, Yutaka; Tsukamoto, Kenji; Isoyama, Eizo

1985-01-01

Ultra high vacuum systems made of aluminum alloys are actively developed. The reasons for using aluminum alloys are low residual radioactivity, light weight, good machinability, good thermal conductivity, non-magnetism. The important function required for ultra high vacuum materials is low outgassing rate, but surface gas on ordinary aluminum is much. Then the research on aluminum surface structure with low outgassing rate has been made and the special extrusion method, that is, extrusion method with the conditions of preventing air from entering inside of pipe and of taking in mixture gas of Ar + O 2 , was developed. 6063 alloy obtained by special extrusion method showed low outgassing rate (2 x 10 -13 Torr. 1/s. cm 2 ) by only 150 deg C, 24 h baking. For the future it will be important to develop aluminum alloys with low dynamic outgassing rate as well as low static outgassing rate. (author)

High quality aluminium doped zinc oxide target synthesis from nanoparticulate powder and characterisation of sputtered thin films

Energy Technology Data Exchange (ETDEWEB)

Isherwood, P.J.M., E-mail: P.J.M.Isherwood@lboro.ac.uk [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Neves, N. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Bowers, J.W. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom); Newbatt, P. [Innovnano, S. A., Rua Coimbra Inovação Parque, IParque Lote 13, 3040-570 Antanhol, Coimbra (Portugal); Walls, J.M. [Centre for Renewable Energy Systems Technology, Loughborough University, Loughborough, Leicestershire LE11 3TU (United Kingdom)

2014-09-01

Nanoparticulate aluminium-doped zinc oxide powder was synthesised through detonation and subsequent rapid quenching of metallic precursors. This technique allows for precise compositional control and rapid nanoparticle production. The resulting powder was used to form sputter targets, which were used to deposit thin films by radio frequency sputtering. These films show excellent sheet resistance and transmission values for a wide range of deposition temperatures. Crystal structure analysis shows that crystals in the target have a random orientation, whereas the crystals in the films grow perpendicular to the substrate surface and propagate preferentially along the (002) axis. Higher temperature deposition reduces crystal quality with a corresponding decrease in refractive index and an increase in sheet resistance. Films deposited between room temperature and 300 °C were found to have sheet resistances equivalent to or better than indium tin oxide films for a given average transmission value. - Highlights: • Nanoparticulate AZO powder was used to produce sputter targets. • The powder synthesis technique allows for precise compositional control. • Sputtered films show excellent optical, electronic and structural properties. • High temperature films show reduced electrical and structural quality. • For a given transmission, films show equivalent sheet resistances to ITO.

Fundamental aspects of cathodic sputtering

International Nuclear Information System (INIS)

Harman, R.

1979-01-01

The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

Novel Vacuum System for In-Situ Characterization of Fluorescence Properties of Thin Films

Science.gov (United States)

Onozuka, Kohei; Iwata, Nobuyuki; Yamamoto, Hiroshi

We constructed a novel vacuum system in which the cathode luminescence properties of as-prepared films can be measured in-situ. It has been observed that the Zn-Ga-O films deposited on 500°C ITO by sputtering emits light with wavelength of about 500 nm from an ultra thin Zn-rich layer formed near film surface. The luminescence induced by irradiation of electrons has also been observed for the first time in the organic bilayered TPD/Alq3 films prepared in thermal evaporation. Its wavelength blue-shifts by about 120 nm in comparison with the electroluminescence of the same materials. The developed vacuum system is useful to characterize various thin films.

Damp heat stability and annealing behavior of aluminum doped zinc oxide films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Tohsophon, T.; Huepkes, J.; Calnan, S.; Reetz, W.; Rech, B.; Beyer, W.; Sirikulrat, N.

2006-01-01

The damp heat stability and subsequent vacuum annealing behavior of aluminum doped zinc oxide (AZO) films was investigated using Hall effect measurements, X-ray diffraction (XRD) and optical spectrometry techniques. The AZO films were deposited on glass or silicon wafers using reactive and non-reactive magnetron sputtering from metallic and ceramic targets, respectively. Additionally, we characterized surface textured AZO films, which are used as light scattering transparent conductive oxide (TCO) in silicon thin film solar cells. For all films a degradation of the electrical film properties was found after the damp heat treatment. For thick compact films, with large grain size, only a small increase in the electrical resistivity was observed, whereas less compact films prepared at high deposition pressures or very thin films (< 300 nm) showed an increase in resistivity by up to a factor of three already after 300 h. The conductivity degradation during damp heat treatment could be largely reversed by annealing in vacuum. However, annealing temperatures of at least 150 deg. C were required. Possible mechanisms explaining the experimental results are discussed

Vacuum improvements for ultra high charge state ion acceleration

International Nuclear Information System (INIS)

Xie, Z.Q.; Lyneis, C.M.; Clark, D.J.; Guy, A.; Lundgren, S.A

1998-06-01

The installation of a second cryo panel has significantly improved the vacuum in the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory. The neutral pressure in the extraction region decreased from 1.2 x 10 -6 down to about 7 x 10 -7 Torr. The vacuum improvement reduces beam loss from charge changing collisions and enhances the cyclotron beam transmission, especially for the high charge state heavy ions. Tests with improved vacuum show the cyclotron transmission increased more than 50% (from 5.7% to 9.0%) for a Xe 27+ at 603 MeV, more than doubled for a Bi 41+ beam (from 1.9% to 4.6%) at 904 MeV and tripled for a U 47+ beam (from 1.2% to 3.6%) at 1,115 MeV. At about 5 NeV/nucleon 92 enA (2.2 pnA) for Bi 41+ and 14 enA (0.3 pnA) for U 47+ were extracted ut of the 88-Inch Cyclotron Ion beams with charge states as high as U 64+ have been produced by the LBNL AECR-U ion source and accelerated through the cyclotron for the first time. The beam losses for a variety of ultra high charge state ions were measured as a function of cyclotron pressure and compared with the calculations from the existing models

Vacuum improvements for ultra high charge state ion acceleration

International Nuclear Information System (INIS)

Xie, Z.Q.; Lyneis, C.M.; Clark, D.J.; Guy, A.; Lundgren, S.A.

1999-01-01

The installation of a second cryo panel has significantly improved the vacuum in the 88-Inch Cyclotron at Lawrence Berkeley National Laboratory. The neutral pressure in the extraction region decreased from 1.2 x 10 -6 down to about 7 x 10 -7 Torr. The vacuum improvement reduces beam loss from charge changing collisions and enhances the cyclotron beam transmission, especially for the high charge state heavy ions. Tests with improved vacuum show the cyclotron transmission increased more than 50% (from 5.7% to 9.0%) for a Xe 27+ at 603 MeV, more than doubled for a Bi 41+ beam (from 1.9% % to 4.6%) at 904 MeV and tripled for a U 47+ beam (from 1.2% to 3.6%) at 1115 MeV. At about 5 MeV/nucleon 92 enA (2.2 pnA) for Bi 41+ and 14 enA (0.3 pnA) for U 47+ were extracted out of the 88-Inch Cyclotron Ion beams with charge states as high as U 64+ have been produced by the LBNL AECR-U ion source and accelerated through the cyclotron for the first time. The beam losses for a variety of ultra high charge state ions were measured as a function of cyclotron pressure and compared with the calculations from the existing models. (authors)

Novel texturing method for sputtered zinc oxide films prepared at high deposition rate from ceramic tube targets

Directory of Open Access Journals (Sweden)

Hüpkes J.

2011-10-01

Full Text Available Sputtered and wet-chemically texture etched zinc oxide (ZnO films on glass substrates are regularly applied as transparent front contact in silicon based thin film solar cells. In this study, chemical wet etching in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl on aluminum doped zinc oxide (ZnO:Al films deposited by magnetron sputtering from ceramic tube targets at high discharge power (~10 kW/m target length is investigated. Films with thickness of around 800 nm were etched in diluted HCl acid and HF acid to achieve rough surface textures. It is found that the etching of the films in both etchants leads to different surface textures. A two steps etching process, which is especially favorable for films prepared at high deposition rate, was systematically studied. By etching first in diluted hydrofluoric acid (HF and subsequently in diluted hydrochloric acid (HCl these films are furnished with a surface texture which is characterized by craters with typical diameter of around 500 − 1000 nm. The resulting surface structure is comparable to etched films sputtered at low deposition rate, which had been demonstrated to be able to achieve high efficiencies in silicon thin film solar cells.

On niobium sputter coated cavities

International Nuclear Information System (INIS)

Arnolds-Mayer, G.; Kaufmann, U.; Downar, H.

1988-01-01

To coat copper cavities with a thin film of niobium, facilities for electropolishing and sputter deposition have been installed at Dornier. Experiments have been performed on samples to optimize electropolishing and deposition parameters. In this paper, characteristics concerning surface properties, adhesion of the niobium film to the copper substrate, and film properties were studied on planar samples. A 1.5 GHz single cell cavity made from oxygen free high conductivity (OFHC) copper was sputter coated twice. First rf measurements were performed in the temperature range from 300 K to 2 K

Decay rate of the false vacuum at high temperatures

International Nuclear Information System (INIS)

Eboli, O.J.P.; Marques, G.C.

1986-01-01

We investigate, within the semiclassical approach, the high temperature behaviour of the decay rate (Γ) of the metastable vacuum in Field Theory. We exhibit some exactly soluble (1+1) and (3+1) dimensional examples and develop a formal expression for γ in the high temperature limit. (Author) [pt

High quality TmIG films with perpendicular magnetic anisotropy grown by sputtering

Science.gov (United States)

Wu, C. N.; Tseng, C. C.; Yeh, S. L.; Lin, K. Y.; Cheng, C. K.; Fanchiang, Y. T.; Hong, M.; Kwo, J.

Ferrimagnetic thulium iron garnet (TmIG) films grown on gadolinium gallium garnet substrates recently showed stress-induced perpendicular magnetic anisotropy (PMA), attractive for realization of quantum anomalous Hall effect (QAHE) of topological insulator (TI) films via the proximity effect. Moreover, current induced magnetization switching of Pt/TmIG has been demonstrated for the development of room temperature (RT) spintronic devices. In this work, high quality TmIG films (about 25nm) were grown by sputtering at RT followed by post-annealing. We showed that the film composition is tunable by varying the growth parameters. The XRD results showed excellent crystallinity of stoichiometric TmIG films with an out-of-plane lattice constant of 1.2322nm, a narrow film rocking curve of 0.017 degree, and a film roughness of 0.2 nm. The stoichiometric films exhibited PMA and the saturation magnetization at RT was 109 emu/cm3 (RT bulk value 110 emu/cm3) with a coercive field of 2.7 Oe. In contrast, TmIG films of Fe deficiency showed in-plane magnetic anisotropy. The high quality sputtered TmIG films will be applied to heterostructures with TIs or metals with strong spin-orbit coupling for novel spintronics.

Growth and characterization of high quality ZnS thin films by RF sputtering

Science.gov (United States)

Mukherjee, C.; Rajiv, K.; Gupta, P.; Sinha, A. K.; Abhinandan, L.

2012-06-01

High optical quality ZnS films are deposited on glass and Si wafer by RF sputtering from pure ZnS target. Optical transmittance, reflectance, ellipsometry, FTIR and AFM measurements are carried out. Effect of substrate temperature and chamber baking for long duration on film properties have been studied. Roughness of the films as measured by AFM are low (1-2Å).

Synthesis and characterization of DC magnetron sputtered ZnO thin films under high working pressures

International Nuclear Information System (INIS)

Hezam, M.; Tabet, N.; Mekki, A.

2010-01-01

ZnO thin films were deposited on glass substrates using direct current (dc) magnetron sputtering under high working pressures. A pure zinc target was used, and sputtering was carried out in an oxygen atmosphere. The working pressure was varied between 50 and 800 mTorr. XRD characterization showed that for a window of working pressures between 300 and 500 mTorr, the deposited films were polycrystalline, with strong preferential orientation of grains along the c-axis. The film deposited at 400 mTorr had the highest (002) peak with the largest estimated grain size. Outside this window, the crystallinity and c-orientation of grains are lost. The microstructure of the films was investigated by Atomic Force microscopy (AFM). Optical transparency of the films was about 85%. The films produced were highly resistive, which might provide new alternatives for the synthesis of ZnO thin films aimed for SAW devices.

Field installed brazed thermocouple feedthroughs for high vacuum experiments

International Nuclear Information System (INIS)

Anderson, P.; Messick, C.

1983-01-01

In order to reduce the occurrence of vacuum leaks and to increase the availability of the DIII vacuum vessel for experimental operation, effort was applied to developing a vacuum-tight brazed feedthrough system for sheathed thermocouples, stainless steel sheathed conductor cables and tubes for cooling fluids. This brazed technique is a replacement for elastomer ''O'' ring sealed feedthroughs that have proven vulnerable to leaks caused by thermal cycling, etc. To date, about 200 feedthroughs have been used. Up to 91 were grouped on a single conflat flange mounted in a bulkhead connector configuration which facilitates installation and removal. Investigation was required to select a suitable braze alloy, flux and installation procedure. Braze alloy selection was challenging since the alloy was required to have: 1) Melting temperature in excess of the 250 0 C (482 0 F) bakeout temperature. 2) No high vapor pressure elements. 3) Good wetting properties when used in air with acceptable flux. 4) Good wettability to 300 series stainless steel and inconel

Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

Directory of Open Access Journals (Sweden)

Hyun-Woo Lee

2018-01-01

Full Text Available We investigated the effects of vacuum rapid thermal annealing (RTA on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

Vacuum mechatronics

Science.gov (United States)

Hackwood, Susan; Belinski, Steven E.; Beni, Gerardo

1989-01-01

The discipline of vacuum mechatronics is defined as the design and development of vacuum-compatible computer-controlled mechanisms for manipulating, sensing and testing in a vacuum environment. The importance of vacuum mechatronics is growing with an increased application of vacuum in space studies and in manufacturing for material processing, medicine, microelectronics, emission studies, lyophylisation, freeze drying and packaging. The quickly developing field of vacuum mechatronics will also be the driving force for the realization of an advanced era of totally enclosed clean manufacturing cells. High technology manufacturing has increasingly demanding requirements for precision manipulation, in situ process monitoring and contamination-free environments. To remove the contamination problems associated with human workers, the tendency in many manufacturing processes is to move towards total automation. This will become a requirement in the near future for e.g., microelectronics manufacturing. Automation in ultra-clean manufacturing environments is evolving into the concept of self-contained and fully enclosed manufacturing. A Self Contained Automated Robotic Factory (SCARF) is being developed as a flexible research facility for totally enclosed manufacturing. The construction and successful operation of a SCARF will provide a novel, flexible, self-contained, clean, vacuum manufacturing environment. SCARF also requires very high reliability and intelligent control. The trends in vacuum mechatronics and some of the key research issues are reviewed.

Development of an inductively coupled impulse sputtering source for coating deposition

Science.gov (United States)

Loch, Daniel Alexander Llewellyn

In recent years, highly ionised pulsed plasma processes have had a great impact on improving the coating performance of various applications, such as for cutting tools and ITO coatings, allowing for a longer service life and improved defect densities. These improvements stem from the higher ionisation degree of the sputtered material in these processes and with this the possibility of controlling the flux of sputtered material, allowing the regulation of the hardness and density of coatings and the ability to sputter onto complex contoured substrates. The development of Inductively Coupled Impulse Sputtering (ICIS) is aimed at the potential of utilising the advantages of highly ionised plasma for the sputtering of ferromagnetic material. In traditional magnetron based sputter processes ferromagnetic materials would shunt the magnetic field of the magnetron, thus reducing the sputter yield and ionisation efficiency. By generating the plasma within a high power pulsed radio frequency (RF) driven coil in front of the cathode, it is possible to remove the need for a magnetron by applying a high voltage pulsed direct current to the cathode attracting argon ions from the plasma to initiate sputtering. This is the first time that ICIS technology has been deployed in a sputter coating system. To study the characteristics of ICIS, current and voltage waveforms have been measured to examine the effect of increasing RF-power. Plasma analysis has been conducted by optical emission spectroscopy to investigate the excitation mechanisms and the emission intensity. These are correlated to the set RF-power by modelling assumptions based on electron collisions. Mass spectroscopy is used to measure the plasma potential and ion energy distribution function. Pure copper, titanium and nickel coatings have been deposited on silicon with high aspect ratio via to measure the deposition rate and characterise the microstructure. For titanium and nickel the emission modelling results are in

Sputtering. [as deposition technique in mechanical engineering

Science.gov (United States)

Spalvins, T.

1976-01-01

This paper primarily reviews the potential of using the sputtering process as a deposition technique; however, the manufacturing and sputter etching aspects are also discussed. Since sputtering is not regulated by classical thermodynamics, new multicomponent materials can be developed in any possible chemical composition. The basic mechanism for dc and rf sputtering is described. Sputter-deposition is described in terms of the unique advantageous features it offers such as versatility, momentum transfer, stoichiometry, sputter-etching, target geometry (coating complex surfaces), precise controls, flexibility, ecology, and sputtering rates. Sputtered film characteristics, such as strong adherence and coherence and film morphology, are briefly evaluated in terms of varying the sputtering parameters. Also described are some of the specific industrial areas which are turning to sputter-deposition techniques.

Ethanol production from food waste at high solids content with vacuum recovery technology.

Science.gov (United States)

Huang, Haibo; Qureshi, Nasib; Chen, Ming-Hsu; Liu, Wei; Singh, Vijay

2015-03-18

Ethanol production from food wastes does not only solve environmental issues but also provides renewable biofuels. This study investigated the feasibility of producing ethanol from food wastes at high solids content (35%, w/w). A vacuum recovery system was developed and applied to remove ethanol from fermentation broth to reduce yeast ethanol inhibition. A high concentration of ethanol (144 g/L) was produced by the conventional fermentation of food waste without a vacuum recovery system. When the vacuum recovery is applied to the fermentation process, the ethanol concentration in the fermentation broth was controlled below 100 g/L, thus reducing yeast ethanol inhibition. At the end of the conventional fermentation, the residual glucose in the fermentation broth was 5.7 g/L, indicating incomplete utilization of glucose, while the vacuum fermentation allowed for complete utilization of glucose. The ethanol yield for the vacuum fermentation was found to be 358 g/kg of food waste (dry basis), higher than that for the conventional fermentation at 327 g/kg of food waste (dry basis).

Insulation vacuum and beam vacuum overpressure release

CERN Document Server

Parma, V

2009-01-01

There is evidence that the incident of 19th September caused a high pressure build-up inside the cryostat insulation vacuum which the existing overpressure devices could not contain. As a result, high longitudinal forces acting on the insulation vacuum barriers developed and broke the floor and the floor fixations of the SSS with vacuum barriers. The consequent large longitudinal displacements of the SSS damaged chains of adjacent dipole cryo-magnets. Estimates of the helium mass flow and the pressure build- up experienced in the incident are presented together with the pressure build-up for an even more hazardous event, the Maximum Credible Incident (MCI). The strategy of limiting the maximum pressure by the installation of addition pressure relieve devices is presented and discussed. Both beam vacuum lines were ruptured during the incident in sector 3-4 giving rise to both mechanical damage and pollution of the system. The sequence, causes and effects of this damage will be briefly reviewed. We will then an...

Tailoring the soft magnetic properties of sputtered multilayers by microstructure engineering for high frequency applications

Directory of Open Access Journals (Sweden)

Claudiu V. Falub

2017-05-01

Full Text Available Soft magnetic Ni78.5Fe21.5, Co91.5Ta4.5Zr4 and Fe52Co28B20 thin films laminated with SiO2, Al2O3, AlN, and Ta2O5 dielectric interlayers were deposited on 8” Si wafers using DC, pulsed DC and RF cathodes in the industrial, high-throughput Evatec LLS-EVO-II magnetron sputtering system. A typical multilayer consists of a bilayer stack up to 50 periods, with alternating (50-100 nm thick magnetic layers and (2-20 nm thick dielectric interlayers. We introduced the in-plane magnetic anisotropy in these films during sputtering by a combination of a linear magnetic field, seed layer texturing by means of linear collimators, and the oblique incidence inherent to the geometry of the sputter system. Depending on the magnetic material, the anisotropy field for these films was tuned in the range of ∼(7-120 Oe by choosing the appropriate interlayer thickness, the aspect ratios of the linear collimators in front of the targets, and the sputter process parameters (e.g. pressure, power, DC pulse frequency, while the coercivity was kept low, ∼(0.05-0.9 Oe. The alignment of the easy axis (EA on the 8” wafers was typically between ±1.5° and ±4°. We discuss the interdependence of structure and magnetic properties in these films, as revealed by atomic force microscopy (AFM, X-ray reflectivity (XRR with reciprocal space mapping (RSM and magneto-optical Kerr effect (MOKE measurements.

Effect of sputtering power on structure and properties of Bi film deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Liao Guo; He Zhibing; Xu Hua; Li Jun; Chen Taihua; Chen Jiajun

2012-01-01

Bi film was fabricated at different sputtering powers by DC magnetron sputtering. The deposition rate of Bi film as the function of sputtering power was studied. The surface topography of Bi film was observed by SEM, and the growth mode of Bi film was investigated. The crystal structure was analyzed by XRD. The grain size and stress of Bi film were calculated. The SEM images show that all the films are columnar growth. The average grain size firstly increases as the sputtering power increases, then decreases at 60 W. The film becomes loose with the increase of sputtering power, while, the film gets compact when the sputtering power becomes from 45 to 60 W. The XRD results show that films are polycrystalline of hexagonal. And the stress transforms from the tensile stress to compressive stress as the sputtering power increases. (authors)

RF magnetron sputtering of a hydroxyapatite target: A comparison study on polytetrafluorethylene and titanium substrates

Science.gov (United States)

Surmenev, Roman A.; Surmeneva, Maria A.; Grubova, Irina Yu.; Chernozem, Roman V.; Krause, Bärbel; Baumbach, Tilo; Loza, Kateryna; Epple, Matthias

2017-08-01

A pure hydroxyapatite (HA) target was used to prepare the biocompatible coating of HA on the surface of a polytetrafluorethylene (PTFE) substrate, which was placed on the same substrate holder with technically pure titanium (Ti) in the single deposition runs by radio-frequency (RF) magnetron sputtering. The XPS, XRD and FTIR analyses of the obtained surfaces showed that for all substrates, instead of the HA coating deposition, the coating of a mixture of calcium carbonate and calcium fluoride was grown. According to SEM investigations, the surface of PTFE was etched, and the surface topography of uncoated Ti was preserved after the depositions. The FTIR results reveal no phosphate bonds; only calcium tracks were observed in the EDX-spectra on the surface of the coated PTFE substrates. Phosphate oxide (V), which originated from the target, could be removed using a vacuum pump system, or no phosphate-containing bonds could be formed on the substrate surface because of the severe substrate bombardment process, which prevented the HA coating deposition. The observed results may be connected with the surface re-sputtering effect of the growing film by high-energy negatively charged ions (most probably oxygen or fluorine), which are accelerated in the cathode dark sheath.

Type II textured molybdenum disulphide films produced by direct vapour transport and rf-magnetron sputtering

International Nuclear Information System (INIS)

Bohlken, S.F.; Lemon, K.D.; Jakovidis, G.; Taheri, E.H.

1999-01-01

Full text: Molybdenum disulphide (MoS 2 ) is one of the few naturally occurring Layered Transition Metal Dichalcogenides and is the primary source for elemental molybdenum. It displays exceptional lubrication performance in both vacuum and atmospheric conditions over a wide temperature range. An important emerging application of MoS 2 and related materials is photovoltaics. Films of MoS 2 exhibit several morphologies described by the orientation of platelets with respect to the substrate. Films with platelets perpendicular or parallel to the substrate are referred to by their morphology, which is type-I or type-II respectively. Production of exclusive type-II films is highly desirable in applications involving lubrication and photovoltaics. For example, type-II morphology reduces friction and minority carrier recombination centres, thus improving tribological and photovoltaic performance. We have successfully produced type-II films using both direct vapour transport and rf-magnetron sputtering Continuous polycrystalline films (∼ 10 μm thick) grown in our laboratory using vapour transport have typical areas 1000 mm 2 . A novel ejecta filtration technique was applied to rf-magnetron sputtering. Films produced using this approach retain exclusive type-II morphology at thicknesses where type-I would normally be observed (∼ 200nm)

Ultrasonic Spray Drying vs High Vacuum and Microwaves Technology for Blueberries

Science.gov (United States)

Candia-Muñoz, N.; Ramirez-Bunster, M.; Vargas-Hernández, Y.; Gaete-Garretón, L.

Interest in high quality foods: good taste and a high content of nutrients with healthy beneficial effects are increasing. Fruits have good properties but, they are lost because the oxidation process, additionally, for different reasons a 40% of harvested fruit are lost. To conserve the fruit properties an ultrasonic assisted spray dryer was developed and tested, comparing its results with microwave-vacuum drying technology. Results did shown taste, color, smell, particle shape and size distribution better than the conventional one. The antioxidants conservation were quite good except in the anthocyanins, in which the microwave and vacuum technology shown best results.

Vacuum Bloch-Siegert shift in Landau polaritons with ultra-high cooperativity

Science.gov (United States)

Li, Xinwei; Bamba, Motoaki; Zhang, Qi; Fallahi, Saeed; Gardner, Geoff C.; Gao, Weilu; Lou, Minhan; Yoshioka, Katsumasa; Manfra, Michael J.; Kono, Junichiro

2018-06-01

A two-level system resonantly interacting with an a.c. magnetic or electric field constitutes the physical basis of diverse phenomena and technologies. However, Schrödinger's equation for this seemingly simple system can be solved exactly only under the rotating-wave approximation, which neglects the counter-rotating field component. When the a.c. field is sufficiently strong, this approximation fails, leading to a resonance-frequency shift known as the Bloch-Siegert shift. Here, we report the vacuum Bloch-Siegert shift, which is induced by the ultra-strong coupling of matter with the counter-rotating component of the vacuum fluctuation field in a cavity. Specifically, an ultra-high-mobility two-dimensional electron gas inside a high-Q terahertz cavity in a quantizing magnetic field revealed ultra-narrow Landau polaritons, which exhibited a vacuum Bloch-Siegert shift up to 40 GHz. This shift, clearly distinguishable from the photon-field self-interaction effect, represents a unique manifestation of a strong-field phenomenon without a strong field.

Simulation of carbon sputtering due to molecular hydrogen impact

International Nuclear Information System (INIS)

Laszlo, J.

1993-01-01

Simulated results are compared to experimental data on the sputtering yield of carbon due to atomic and to molecular hydrogen impact. The experimental sputtering yields of carbon (graphite) due to low energy hydrogen bombardment have been found to be higher than the simulated ones. Efforts are made to obtain high enough simulated yields by considering the formation of dimer, H 2 and D 2 molecules in the primary beam. The molecular beam model applies full neutralization and full dissociation at the surface. The simulation of sputtering yields of target materials up to Z 2 ≤ 30 is also included for the low primary energy regime for deuterium projectiles. It is found that, although the sputtering yields really tend to increase, the effect of molecule formation in the beam in itself cannot be made responsible for the deviation between measured and simulated sputtering yields. (orig.)

Pulsed dc self-sustained magnetron sputtering

International Nuclear Information System (INIS)

Wiatrowski, A.; Posadowski, W. M.; Radzimski, Z. J.

2008-01-01

The magnetron sputtering has become one of the commonly used techniques for industrial deposition of thin films and coatings due to its simplicity and reliability. At standard magnetron sputtering conditions (argon pressure of ∼0.5 Pa) inert gas particles (necessary to sustain discharge) are often entrapped in the deposited films. Inert gas contamination can be eliminated during the self-sustained magnetron sputtering (SSS) process, where the presence of the inert gas is not a necessary requirement. Moreover the SSS process that is possible due to the high degree of ionization of the sputtered material also gives a unique condition during the transport of sputtered particles to the substrate. So far it has been shown that the self-sustained mode of magnetron operation can be obtained using dc powering (dc-SSS) only. The main disadvantage of the dc-SSS process is its instability related to random arc formation. In such case the discharge has to be temporarily extinguished to prevent damaging both the magnetron source and power supply. The authors postulate that pulsed powering could protect the SSS process against arcs, similarly to reactive pulsed magnetron deposition processes of insulating thin films. To put this concept into practice, (i) the high enough plasma density has to be achieved and (ii) the type of pulsed powering has to be chosen taking plasma dynamics into account. In this article results of pulsed dc self-sustained magnetron sputtering (pulsed dc-SSS) are presented. The planar magnetron equipped with a 50 mm diameter and 6 mm thick copper target was used during the experiments. The maximum target power was about 11 kW, which corresponded to the target power density of ∼560 W/cm 2 . The magnetron operation was investigated as a function of pulse frequency (20-100 kHz) and pulse duty factor (50%-90%). The discharge (argon) extinction pressure level was determined for these conditions. The plasma emission spectra (400-410 nm range) and deposition

Study of the ion sputter-machining, 1

International Nuclear Information System (INIS)

Miyamoto, Iwao; Taniguchi, Norio

1979-01-01

A lattice disordering of the surface of single crystal silicon due to ion bombardment of Ar + was investigated by the high energy electron diffraction method, with the incident angle of 1.7 0 and 2.8 0 . By this measuring system, the degree of disorders of the sputter-machined surface layer of Si single crystal in the depth of 50 A and 30 A has been determined, under the working conditions of the ion energy ranging from 0.2 keV to 1.5 keV and the incident angle of ion ranging from 0 0 to 75 0 . Moreover, the recovery of lattice disorder of sputter-machined surface layer of Si single crystal by means of the isochronal thermal annealing has been also confirmed by the same method. From the above experiments, the following conclusions are obtained. (1) The layers of sputter-machined surface of Si single crystal workpiece are highly disordered like amorphous, under the working conditions of ion energy ranging from 0.2 keV to 1.5 keV for the vertical ion incident angle. (2) Under the working conditions of ion incident angle larger than 60 0 , using the ion beam with a lower energy under 300 eV, the surface of the workpiece is not disordered. Therefore, a sputter-machined surface of Si single crystal with highly ordered structure can be obtained under this working condition. (3) The recovery of disorder of sputter-machined surface is completed by the heat-treatment of workpiece under isochronal annealing for 1 hour at 800 0 C. However, it is not clear whether this recovery of lattice point or the dispersion of interstitially located argon atoms from the surface to the outside. (author)

Characterization of magnetic Ni clusters on graphene scaffold after high vacuum annealing

Energy Technology Data Exchange (ETDEWEB)

Zhang, Zhenjun, E-mail: zzhang1@albany.edu; Matsubayashi, Akitomo, E-mail: norwegianwood.1984@gmail.com; Grisafe, Benjamin, E-mail: bgrisafe@albany.edu; Lee, Ji Ung, E-mail: jlee1@albany.edu; Lloyd, James R., E-mail: JLloyd@sunycnse.com

2016-02-15

Magnetic Ni nanoclusters were synthesized by electron beam deposition utilizing CVD graphene as a scaffold. The subsequent clusters were subjected to high vacuum (5−8 x10{sup −7} torr) annealing between 300 and 600 °C. The chemical stability, optical and morphological changes were characterized by X-ray photoemission microscopy, Raman spectroscopy, atomic force microscopy and magnetic measurement. Under ambient exposure, nickel nanoparticles were observed to be oxidized quickly, forming antiferromagnetic nickel oxide. Here, we report that the majority of the oxidized nickel is in non-stoichiometric form and can be reduced under high vacuum at temperature as low as 300 °C. Importantly, the resulting annealed clusters were relatively stable and no further oxidation was detectable after three weeks of air exposure at room temperature. - Highlights: • Random oriented nickel clusters were assembled on monolayer graphene scaffold. • Nickel oxide shell was effectively reduced at moderate temperature. • Coercivity of nickel clusters are greatly improved after high vacuum annealing.

The vacuum system for the PEP II high energy ring straight sections

International Nuclear Information System (INIS)

Wienands, U.; Daly, E.; Heifets, S.A.; Kulikov, A.; Kurita, N.; Nordby, M.; Perkins, C.; Reuter, E.; Seeman, J.T.; Belser, F.C.; Berg, J.; Holdener, F.R.; Kerns, J.A.; McDaniel, M.R.; Stoeffl, W.

1995-01-01

The six straight sections of the PEP II High Energy Ring (HER) serve various functions: lattice tuning, beam injection and abort, providing space for rf cavities, longitudinal and transverse feedback, beam diagnostics and the interaction point. A stainless steel vacuum system has been designed; prototypes are currently being built. Cooling is required due to radiation coming from the last arc dipole and resistive losses in the vacuum chamber. Although the nominal beam current of the HER is 1 A the vacuum system is designed for 3 A to provide margin and an upgrade path. 5 refs., 7 figs

Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices

Science.gov (United States)

Gamzina, Diana

Diana Gamzina March 2016 Mechanical and Aerospace Engineering Multiscale Thermo-Mechanical Design and Analysis of High Frequency and High Power Vacuum Electron Devices Abstract A methodology for performing thermo-mechanical design and analysis of high frequency and high average power vacuum electron devices is presented. This methodology results in a "first-pass" engineering design directly ready for manufacturing. The methodology includes establishment of thermal and mechanical boundary conditions, evaluation of convective film heat transfer coefficients, identification of material options, evaluation of temperature and stress field distributions, assessment of microscale effects on the stress state of the material, and fatigue analysis. The feature size of vacuum electron devices operating in the high frequency regime of 100 GHz to 1 THz is comparable to the microstructure of the materials employed for their fabrication. As a result, the thermo-mechanical performance of a device is affected by the local material microstructure. Such multiscale effects on the stress state are considered in the range of scales from about 10 microns up to a few millimeters. The design and analysis methodology is demonstrated on three separate microwave devices: a 95 GHz 10 kW cw sheet beam klystron, a 263 GHz 50 W long pulse wide-bandwidth sheet beam travelling wave tube, and a 346 GHz 1 W cw backward wave oscillator.

Post-deposition annealing effects in RF reactive magnetron sputtered indium tin oxide thin films

Energy Technology Data Exchange (ETDEWEB)

Martinez, M A; Herrero, J; Gutierrez, M T [Inst. de Energias Renovables (CIEMAT), Madrid (Spain)

1992-05-01

Indium tin oxide films have been grown by RF reactive magnetron sputtering. The influence of the deposition parameters on the properties of the films has been investigated and optimized, obtaining a value for the figure of merit of 6700 ({Omega} cm){sup -1}. As-grown indium tin oxide films were annealed in vacuum and O{sub 2} atmosphere. After these heat treatments the electro-optical properties were improved, with values for the resistivity of 1.9x10{sup -4} {Omega} cm and the figure of merit of 26700 ({Omega} cm){sup -1}. (orig.).

Surface sputtering in high-dose Fe ion implanted Si

International Nuclear Information System (INIS)

Ishimaru, Manabu

2007-01-01

Microstructures and elemental distributions in high-dose Fe ion implanted Si were characterized by means of transmission electron microscopy and Rutherford backscattering spectroscopy. Single crystalline Si(0 0 1) substrates were implanted at 350 deg. C with 120 keV Fe ions to fluences ranging from 0.1 x 10 17 to 4.0 x 10 17 /cm 2 . Extensive damage induced by ion implantation was observed inside the substrate below 1.0 x 10 17 /cm 2 , while a continuous iron silicide layer was formed at 4.0 x 10 17 /cm 2 . It was found that the spatial distribution of Fe projectiles drastically changes at the fluence between 1.0 x 10 17 and 4.0 x 10 17 /cm 2 due to surface sputtering during implantation

The statistics of sputtering

International Nuclear Information System (INIS)

Robinson, M.T.

1993-01-01

The MARLOWE program was used to study the statistics of sputtering on the example of 1- to 100-keV Au atoms normally incident on static (001) and (111) Au crystals. The yield of sputtered atoms was examined as a function of the impact point of the incident particles (''ions'') on the target surfaces. There were variations on two scales. The effects of the axial and planar channeling of the ions could be traced, the details depending on the orientation of the target and the energies of the ions. Locally, the sputtering yield was very sensitive to the impact point, small changes in position often producing large changes yield. Results indicate strongly that the sputtering yield is a random (''chaotic'') function of the impact point

Influence of Gap Distance on Vacuum Arc Characteristics of Cup Type AMF Electrode in Vacuum Interrupters

International Nuclear Information System (INIS)

Cheng Shaoyong; Xiu Shixin; Wang Jimei; Shen Zhengchao

2006-01-01

The greenhouse effect of SF 6 is a great concern today. The development of high voltage vacuum circuit breakers becomes more important. The vacuum circuit breaker has minimum pollution to the environment. The vacuum interrupter is the key part of a vacuum circuit breaker. The interrupting characteristics in vacuum and arc-controlling technique are the main problems to be solved for a longer gap distance in developing high voltage vacuum interrupters. To understand the vacuum arc characteristics and provide effective technique to control vacuum arc in a long gap distance, the arc mode transition of a cup-type axial magnetic field electrode is observed by a high-speed charge coupled device (CCD) video camera under different gap distances while the arc voltage and arc current are recorded. The controlling ability of the axial magnetic field on vacuum arc obviously decreases when the gap distance is longer than 40 mm. The noise components and mean value of the arc voltage significantly increase. The effective method for controlling the vacuum arc characteristics is provided by long gap distances based on the test results. The test results can be used as a reference to develop high voltage and large capacity vacuum interrupters

Formation and stability of sputtered clusters

International Nuclear Information System (INIS)

Andersen, H.H.

1989-01-01

Current theory for the formation of sputtered clusters states that either atoms are sputtered individually and aggregate after having left the surface or they are sputtered as complete clusters. There is no totally sharp boundary between the two interpretations, but experimental evidence is mainly thought to favour the latter model. Both theories demand a criterion for the stability of the clusters. In computer simulations of sputtering, the idea has been to use the same interaction potential as in the lattice computations to judge the stability. More qualitatively, simple geometrical shapes have also been looked for. It is found here, that evidence for 'magic numbers' and electron parity effects in clusters have existed in the sputtering literature for a long time, making more sophisticated stability criteria necessary. The breakdown of originally sputtered metastable clusters into stable clusters gives strong support to the 'sputtered as clusters' hypothesis. (author)

High Vacuum Techniques for Anionic Polymerization

KAUST Repository

Ratkanthwar, Kedar

2015-09-01

Anionic polymerization high vacuum techniques (HVTs) are the most suitable for the preparation of polymer samples with well-defined complex macromolecular architectures. Though HVTs require glassblowing skill for designing and making polymerization reactor, it is the best way to avoid any termination of living polymers during the number of steps for the synthesis of polymers with complex structure. In this chapter, we describe the different polymerization reactors and HVTs for the purification of monomers, solvents, and other reagents for anionic polymerization as well as few model reactions for the synthesis of polymers with simple to complex structure.

Ultra-high vacuum photoelectron linear accelerator

Science.gov (United States)

Yu, David U.L.; Luo, Yan

2013-07-16

An rf linear accelerator for producing an electron beam. The outer wall of the rf cavity of said linear accelerator being perforated to allow gas inside said rf cavity to flow to a pressure chamber surrounding said rf cavity and having means of ultra high vacuum pumping of the cathode of said rf linear accelerator. Said rf linear accelerator is used to accelerate polarized or unpolarized electrons produced by a photocathode, or to accelerate thermally heated electrons produced by a thermionic cathode, or to accelerate rf heated field emission electrons produced by a field emission cathode.

Amorphous boron coatings produced with vacuum arc deposition technology

CERN Document Server

Klepper, C C; Yadlowsky, E J; Carlson, E P; Keitz, M D; Williams, J M; Zuhr, R A; Poker, D B

2002-01-01

In principle, boron (B) as a material has many excellent surface properties, including corrosion resistance, very high hardness, refractory properties, and a strong tendency to bond with most substrates. The potential technological benefits of the material have not been realized, because it is difficult to deposit it as coatings. B is difficult to evaporate, does not sputter well, and cannot be thermally sprayed. In this article, first successful deposition results from a robust system, based on the vacuum (cathodic) arc technology, are reported. Adherent coatings have been produced on 1100 Al, CP-Ti, Ti-6Al-4V, 316 SS, hard chrome plate, and 52 100 steel. Composition and thickness analyses have been performed by Rutherford backscattering spectroscopy. Hardness (H) and modules (E) have been evaluated by nanoindentation. The coatings are very pure and have properties characteristic of B suboxides. A microhardness of up to 27 GPa has been measured on a 400-nm-thick film deposited on 52 100 steel, with a corresp...

Properties of tungsten films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ahn, K.Y.; Ting, C.Y.; Brodsky, S.B.; Fryer, P.M.; Davari, B.; Angillelo, J.; Herd, S.R.; Licata, T.

1986-01-01

High-rate magnetron sputtering is a relatively simple process to produce tungsten films with good electrical and mechanical properties, and it offers good uniformity, reproducibility, process flexibility, and high throughput. The purity of the sputtered films is affected by the target purity (cold-pressed 99.95%, chemical vapor deposited 99.99% and cast 99.999%), base pressure, deposition rate, and substrate bias. Typical resistivity in films of 2000 to 3000A thickness deposited on Si, poly-Si, and SiO/sub 2/ ranges from 10 to 12 μΩ-cm, and this may be compared with 6 and 11 μΩ-cm by high-temperature evaporation and chemical vapor deposition, respectively. The presence of biaxial stress caused by substrate scanning was determined by x-ray technique. The sputtered films exhibit high compressive stress when deposited at low Ar pressure. It decreases with increasing pressure, and eventually changes sign to become tensile, and increases further with increasing pressure. Effects of processing parameters on films properties, and a comparison of film properties prepared by evaporation and chemical vapor deposition are discussed

Time response of protection in event of vacuum failure based on Nude ionization gauge controller

Science.gov (United States)

Gao, Hui; Wang, Qiuping; Wang, Weibin; Wu, Qinglin; Chen, Wentong; Sheng, Liusi; Zhang, Yunwu

2001-10-01

This article describes the design and application of fast-response vacuum protection sensor module, based on the Nude ionization gauge and a homemade controller named GH07X. A simulative test indicated that the controller's response time was less than 200 μs when 1 atm air rushed into the vacuum system through a pulsed valve with 0.8 mm orifice nozzle and the emitting current of the Nude gauge was 4 mA. The experiment result showed that the response time mainly depended on the gas density as well as the electron emitting current of the Nude gauge filament. Compared with the vacuum protection sensors based on sputter ion pump and cold-cathode gauge, GH07X is faster and reliable besides, GH07X can be used as an ultrahigh-vacuum slow valve interlock controller with response time of 100 ms, which is faster than other gauge controllers. The widely used field-bus interface CAN and common serial interface RS232/RS485 are embedded in GH07X controller system.

Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

International Nuclear Information System (INIS)

Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

2011-01-01

Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

Estimates of Sputter Yields of Solar-Wind Heavy Ions of Lunar Regolith Materials

Science.gov (United States)

Barghouty, Abdulmasser F.; Adams, James H., Jr.

2008-01-01

At energies of approximately 1 keV/amu, solar-wind protons and heavy ions interact with the lunar surface materials via a number of microscopic interactions that include sputtering. Solar-wind induced sputtering is a main mechanism by which the composition of the topmost layers of the lunar surface can change, dynamically and preferentially. This work concentrates on sputtering induced by solar-wind heavy ions. Sputtering associated with slow (speeds the electrons speed in its first Bohr orbit) and highly charged ions are known to include both kinetic and potential sputtering. Potential sputtering enjoys some unique characteristics that makes it of special interest to lunar science and exploration. Unlike the yield from kinetic sputtering where simulation and approximation schemes exist, the yield from potential sputtering is not as easy to estimate. This work will present a preliminary numerical scheme designed to estimate potential sputtering yields from reactions relevant to this aspect of solar-wind lunar-surface coupling.

Effect of osmotic dehydration and vacuum-frying parameters to produce high-quality mango chips.

Science.gov (United States)

Nunes, Yolanda; Moreira, Rosana G

2009-09-01

Mango (Mangifera indica L.) is a fruit rich in flavor and nutritional values, which is an excellent candidate for producing chips. The objective of this study was to develop high-quality mango chips using vacuum frying. Mango ("Tommy Atkins") slices were pretreated with different maltodextrin concentrations (40, 50, and 65, w/v), osmotic dehydration times (45, 60, and 70 min), and solution temperatures (22 and 40 degrees C). Pretreated slices were vacuum fried at 120, 130, and 138 degrees C and product quality attributes (oil content, texture, color, carotenoid content) determined. The effect of frying temperatures at optimum osmotic dehydration times (65 [w/v] at 40 degrees C) was assessed. All samples were acceptable (scores > 5) to consumer panelists. The best mango chips were those pretreated with 65 (w/v) concentration for 60 min and vacuum fried at 120 degrees C. Mango chips under atmospheric frying had less carotenoid retention (32%) than those under vacuum frying (up to 65%). These results may help further optimize vacuum-frying processing of high-quality fruit-based snacks.

Highly-enhanced reflow characteristics of sputter deposited Cu alloy thin films for large scale integrated interconnections

Energy Technology Data Exchange (ETDEWEB)

Onishi, Takashi [Advanced Technology Information Center, Shinko Research Co., Ltd., 2-7, 4-Chome, Iwaya-Nakamachi, Nada-ku, Kobe 657-0845 (Japan); Mizuno, Masao [Technical Development Group, Electronics Research Laboratory, Kobe Steel, Ltd., 5-5, Takatsukadai 1-chome, Nishi-ku, Kobe 651-2271 (Japan); Yoshikawa, Tetsuya; Munemasa, Jun [Machinery and Engineering Company, Kobe Steel, Ltd., 2-3-1, Shinhama, Arai-cho, Takasago 676-8670 (Japan); Mizuno, Masataka; Kihara, Teruo; Araki, Hideki [Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1, Yamadaoka, Suita 565-0871 (Japan); Shirai, Yasuharu [Department of Materials Science and Engineering, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)

2011-08-01

An attempt to improve the reflow characteristics of sputtered Cu films was made by alloying the Cu with various elements. We selected Y, Sb, Nd, Sm, Gd, Dy, In, Sn, Mg, and P for the alloys, and ''the elasto-plastic deformation behavior at high temperature'' and ''the filling level of Cu into via holes'' were estimated for Cu films containing each of these elements. From the results, it was found that adding a small amount of Sb or Dy to the sputtered Cu was remarkably effective in improve the reflow characteristics. The microstructure and imperfections in the Cu films before and after high-temperature high-pressure annealing were investigated by secondary ion micrographs and positron annihilation spectroscopy. The results imply that the embedding or deformation mechanism is different for the Cu-Sb alloy films compared to the Cu-Dy alloy films. We consider that the former is embedded by softening or deformation of the Cu matrix, which has a polycrystalline structure, and the latter is embedded by grain boundary sliding.

The design and structure of the ultra-high vacuum system of HIRFL-CSR

International Nuclear Information System (INIS)

Yang Xiaotian; Zhang Junhui; Zhang Xinjun; Meng Jun; Zhan Wenlong

2001-01-01

To minimize the beam loss due to charge exchange of very heavy ions with the residual gas molecules, ultra-high vacuum of 6x10 -9 Pa is required for the HIRFL-CSR facility, which is the lowest pressure in a large vacuum system in China up to now. The total length of the system is about 450 meters and the total inner surface is about 263 square meters. More than 500 standard vacuum components are needed and more than 400 different chambers have to be manufactured. A lot of researches have been down to try to find out the experiences to obtain the required pressure. In this article the following contents are described: the layout of the system; the structure of main vacuum chambers; the treatment method to reduce the outgassing rate of the chamber wall surfaces; vacuum equipment; pressure distribution and the progress of the system

Transport theory of sputtering I: Depth of origin of sputtered atoms

International Nuclear Information System (INIS)

Zhang, Z.L.

1999-01-01

Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error <10%) for m=3D0.2. It is also shown that, if the sputtering yield equals the corresponding one in Sigmund's theory, the depth of origin of sputtered atoms must be shorter than in Sigmund's theory for 0.25 m ≥ 3D 0. The former even may be only about one half of the latter as long as m=3D0. (Copyright (c) 1998 Elsevier Science B.V., Amsterdam. All rights reserved.)

Time evolution of the vacuum - pair production in high intensity laser fields

Energy Technology Data Exchange (ETDEWEB)

Woellert, Anton; Bauke, Heiko; Keitel, Christoph H. [Max-Planck-Institut fuer Kernphysik, Heidelberg (Germany)

2013-07-01

Interaction between the vacuum and high intensity lasers will lead to new possibilities in high-field physics. We present numerical ab initio studies for time evolution of the vacuum state into multiple pair states. The high intensity laser field of two counter-propagating beams is treated classically and in the non-perturbative regime (E{sub 0}/ω ∝ 1). In this regime, the time needed by an electron to become relativistic in presence of a static field E{sub 0} is of same order as the period of the laser field. Pair state probabilities as well as correlations are investigated in real-time depending on polarization and field strength.

Electron beam gun with kinematic coupling for high power RF vacuum devices

Science.gov (United States)

Borchard, Philipp

2016-11-22

An electron beam gun for a high power RF vacuum device has components joined by a fixed kinematic coupling to provide both precise alignment and high voltage electrical insulation of the components. The kinematic coupling has high strength ceramic elements directly bonded to one or more non-ductile rigid metal components using a high temperature active metal brazing alloy. The ceramic elements have a convex surface that mates with concave grooves in another one of the components. The kinematic coupling, for example, may join a cathode assembly and/or a beam shaping focus electrode to a gun stem, which is preferably composed of ceramic. The electron beam gun may be part of a high power RF vacuum device such as, for example, a gyrotron, klystron, or magnetron.

Vacuum properties of TiZrV non-evaporable getter films [for LHC vacuum system

CERN Document Server

Benvenuti, Cristoforo; Costa-Pinto, P; Escudeiro-Santana, A; Hedley, T; Mongelluzzo, A; Ruzinov, V; Wevers, I

2001-01-01

Sputter-deposited thin films of TiZrV are fully activated after 24 h "in situ" heating at 180 degrees C. This activation temperature is the lowest of some 18 different getter coatings studied so far, and it allows the use of the getter thin film technology with aluminium alloy vacuum chambers, which cannot be baked at temperatures higher than 200 degrees C. An updated review is given of the most recent results obtained on TiZrV coatings, covering the following topics: influence of the elemental composition and crystal structure on activation temperature, discharge gas trapping and degassing, dependence of pumping speed and surface saturation capacity on film morphology, ageing consequent to activation-air-venting cycles and ultimate pressures. Furthermore, the results obtained when exposing a coated particle beam chamber to synchrotron radiation in a real accelerator environment (ESRF Grenoble) are presented and discussed. (13 refs).

Internal motion in high vacuum systems

Science.gov (United States)

Frank, J. M.

Three transfer and positioning mechanisms have been developed for the non-air exposed, multistep processing of components in vacuum chambers. The functions to be performed in all of the systems include ultraviolet/ozone cleaning, vacuum baking, deposition of thin films, and thermocompression sealing of the enclosures. Precise positioning of the components is required during the evaporation and sealing processes. The three methods of transporting and positioning the components were developed to accommodate the design criteria and goals of each individual system. The design philosophy, goals, and operation of the three mechanisms are discussed.

Controlled planar interface synthesis by ultrahigh vacuum diffusion bonding/deposition

International Nuclear Information System (INIS)

Kim, M. J.; Carpenter, R. W.; Cox, M. J.; Xu, J.

2000-01-01

An ultrahigh vacuum (UHV) diffusion bonding/deposition instrument was designed and constructed, which can produce homophase and heterophase planar interfaces from a wide array of materials. The interfaces are synthesized in situ by diffusion bonding of two substrates with or without various interfacial layers, at temperatures up to about 1500 degree sign C. Substrate surfaces can be heat treated, ion-beam sputter cleaned, and chemically characterized in situ by Auger electron spectroscopy prior to deposition and/or bonding. Bicrystals can be synthesized by bonding two single-crystal substrates at a specified orientation. Interfacial layers can be deposited by electron beam evaporation and/or sputter deposition in any layered or alloyed combination on the substrates before bonding. The instrument can accommodate cylindrical and/or wafer type specimens whose sizes are sufficient for fracture mechanical testing to measure interface bond strength. A variety of planar interfaces of metals, semiconductors, and ceramics were synthesized. Examples of bonded stainless steel/Ti/stainless steel, Si/Si, and sapphire/sapphire interfaces are presented. (c) 2000 Materials Research Society

A high current metal vapour vacuum arc ion source for ion implantation studies

International Nuclear Information System (INIS)

Evans, P.J.; Noorman, J.T.; Watt, G.C.; Cohen, D.D.; Bailey, G.M.

1989-01-01

The main features of the metal vapour vacuum arc(MEVA) as an ion source are presented. The technology utilizes the plasma production capabilities of a vacuum arc cathode. Some of the ions produced in this discharge flow through the anode and the 3 extraction grids to form an extracted ion beam. The high beam current and the potential for generating broad beams, make this technology suitable for implantation of large surface areas. The composition of the vacuum arc cathode determines the particular ions obtained from the MEVA source. 3 refs., 1 tab., 2 figs

Thermal stability of tungsten sub-nitride thin film prepared by reactive magnetron sputtering

Energy Technology Data Exchange (ETDEWEB)

Zhang, X.X. [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Wu, Y.Z., E-mail: youzhiwu@163.com [School of Materials Science and Engineering, Lanzhou University of Technology, Lanzhou, 730050 (China); Mu, B. [College of Petrochemical Technology, Lanzhou University of Technology, Lanzhou, 730050 (China); Qiao, L. [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China); Li, W.X.; Li, J.J. [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Wang, P., E-mail: pengwang@licp.cas.cn [State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou, 730050 (China)

2017-03-15

Tungsten sub-nitride thin films deposited on silicon samples by reactive magnetron sputtering were used as a model system to study the phase stability and microstructural evolution during thermal treatments. XRD, SEM&FIB, XPS, RBS and TDS were applied to investigate the stability of tungsten nitride films after heating up to 1473 K in vacuum. At the given experimental parameters a 920 nm thick crystalline film with a tungsten and nitrogen stoichiometry of 2:1 were achieved. The results showed that no phase and microstructure change occurred due to W{sub 2}N film annealing in vacuum up to 973 K. Heating up to 1073 K led to a partial decomposition of the W{sub 2}N phase and the formation of a W enrichment layer at the surface. Increasing the annealing time at the same temperature, the further decomposition of the W{sub 2}N phase was negligible. The complete decomposition of W{sub 2}N film happened as the temperature reached up to 1473 K.

Ion beam sputtering of Ti: Influence of process parameters on angular and energy distribution of sputtered and backscattered particles

Energy Technology Data Exchange (ETDEWEB)

Lautenschläger, T. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Feder, R., E-mail: thomas.lautenschlaeger@iom-leipzig.de [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Neumann, H. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany); Rice, C.; Schubert, M. [Department of Electrical and Computer Engineering and Center for Nanohybrid Functional Materials, University of Nebraska-Lincoln, Lincoln, Nebraska 68588-0511 (United States); Bundesmann, C. [Leibniz-Institute of Surface Modification, 04318 Leipzig (Germany)

2016-10-15

Highlights: • Ion beam sputter deposition under systematic variation of process parameters. • Angular and energy distribution of secondary particles. • Interaction between incorporated and impinging process gas. • Measured data compared with simulations. - Abstract: In the present study, the influence of ion energy and geometrical parameters onto the angular and energy distribution of secondary particles for sputtering a Ti target with Ar ions is investigated. The angular distribution of the particle flux of the sputtered Ti atoms was determined by the collection method, i.e. by growing Ti films and measuring their thickness. The formal description of the particle flux can be realized by dividing it into an isotropic and an anisotropic part. The experimental data show that increasing the ion energy or decreasing the ion incidence angle lead to an increase of the isotropic part, which is in good agreement with basic sputtering theory. The energy distribution of the secondary ions was measured using an energy-selective mass spectrometer. The energy distribution of the sputtered target ions shows a maximum at an energy between 10 eV and 20 eV followed by a decay proportional to E{sup −n}, which is in principle in accordance with Thompson’s theory, followed by a high energetic tail. When the sum of incidence angle and emission angle is increased, the high-energetic tail expands to higher energies and an additional peak due to direct sputtering events may occur. In the case of backscattered primary Ar ions, a maximum at an energy between 5 eV and 10 eV appears and, depending on the scattering geometry, an additional broad peak at a higher energy due to direct scattering events is observed. The center energy of the additional structure shifts systematically to higher energies with decreasing scattering angle or increasing ion energy. The experimental results are compared to calculations based on simple elastic two-particle-interaction theory and to

Selection and evaluation of an ultra high vacuum gate valve for Isabelle beam line vacuum system

International Nuclear Information System (INIS)

Foerster, C.L.; McCafferty, D.

1980-01-01

A minimum of eighty-four (84) Ultra High Vacuum Gate Valves will be utilized in ISABELLE to protect proton beam lines from catastrophic vacuum failure and to provide sector isolation for maintenance requirements. The valve to be selected must function at less than 1 x 10 -11 Torr pressure and be bakeable to 300 0 C in its open or closed position. In the open position, the valve must have an RF shield to make the beam line walls appear continuous. Several proposed designs were built and evaluated. The evaluation consisted mainly of leak testing, life tests, thermal cycling, mass spectrometer analysis, and 10 -12 Torr operation. Problems with initial design and fabrication were resolved. Special requirements for design and construction were developed. This paper describes the tests on two final prototypes which appear to be the best candidates for ISABELLE operation

Non-conventional photocathodes based on Cu thin films deposited on Y substrate by sputtering

Energy Technology Data Exchange (ETDEWEB)

Perrone, A. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); D’Elia, M. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Gontad, F., E-mail: francisco.gontad@le.infn.it [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); National Institute of Nuclear Physics and University of Salento, 73100 Lecce (Italy); Di Giulio, M.; Maruccio, G. [Department of Mathematics and Physics “E. De Giorgi”, University of Salento, 73100 Lecce (Italy); Cola, A. [National Council Research, Institute for Microelectronics and Microsystems, 73100 Lecce (Italy); Stankova, N.E. [Institute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia (Bulgaria); Kovacheva, D.G. [Institute of General and Inorganic Chemistry, Bulgarian Academy of Sciences, 1113 Sofia (Bulgaria); Broitman, E. [Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping (Sweden)

2014-07-01

Copper (Cu) thin films were deposited on yttrium (Y) substrate by sputtering. During the deposition, a small central area of the Y substrate was shielded to avoid the film deposition and was successively used to study its photoemissive properties. This configuration has two advantages: the cathode presents (i) the quantum efficiency and the work function of Y and (ii) high electrical compatibility when inserted into the conventional radio-frequency gun built with Cu bulk. The photocathode was investigated by scanning electron microscopy to determine surface morphology. X-ray diffraction and atomic force microscopy studies were performed to compare the structure and surface properties of the deposited film. The measured electrical resistivity value of the Cu film was similar to that of high purity Cu bulk. Film to substrate adhesion was also evaluated using the Daimler–Benz Rockwell-C adhesion test method. Finally, the photoelectron performance in terms of quantum efficiency was obtained in a high vacuum photodiode cell before and after laser cleaning procedures. A comparison with the results obtained with a twin sample prepared by pulsed laser deposition is presented and discussed.

Interaction of a vacuum arc plasma beam with an obstacle positioned normal to the plasma flow

International Nuclear Information System (INIS)

Zarchin, O; Zhitomirsky, V N; Goldsmith, S; Boxman, R L

2003-01-01

The effect of an obstacle positioned normal to a plasma jet produced by a vacuum arc plasma source on the radial distribution of ion flux in the vicinity of the obstacle was studied. This study was motivated by interest in the mutual influence of tightly packed substrates on coatings in industrial vacuum arc deposition systems. The experimental system consisted of a vacuum arc plasma source, a straight plasma duct, and a multi-probe consisting of a removable disc obstacle and a set of ring probes for measuring the radial ion flux. A dc arc discharge was ignited in vacuum between a truncated cone-shaped Cu cathode and an annular anode. The plasma jet produced by cathode spots passed through the anode aperture into the straight plasma duct. An axial magnetic field guided the plasma jet in the duct. The multi-probe consisted of a removable disc obstacle and a set of five ring probes for measuring the radial plasma flux as a function of distance from the disc obstacle. The rings and the disc probes were coaxially arranged on the multi-probe assembly and positioned so that plasma from the source passed through the ring probes and then encountered the disc. The influence of the obstacle was determined by measuring the ring ion currents, both in the presence of the obstacle, and when the disc obstacle was removed. The difference between the measured ion currents with and without the obstacle was interpreted to be the contribution of reflected or sputtered particles from the obstacle to the radial ion flux. The ring probes were biased by -60 V with respect to the grounded anode, to collect the saturated ion current. The multi-probe was connected to a movable stem, and positioned at different distances from the plasma source. A plasma density of ∼6 x 10 17 m -3 was estimated in this study based on the ion current to the obstacle. The radial ion flux collected by the ring probes increased by 20-25% due to the presence of the obstacle. As the calculated mean free path for

Sputtering yield calculation for binary target

International Nuclear Information System (INIS)

Jimenez-Rodriguez, J.J.; Rodriguez-Vidal, M.; Valles-Abarca, J.A.

1979-01-01

The generalization for binary targets, of the ideas proposed by Sigmund for monoatomic targets, leads to a set of coupled intergrodifferential equations for the sputtering functions. After moment decomposition, the final formulae are obtained by the standard method based on the Laplace Transform, where the inverse transform is made with the aid of asymptotic expansions in the limit of very high projectile energy as compared to the surface binding energy. The possible loss of stoichiometry for binary targets is analyzed. Comparison of computed values of sputtering yield for normal incidence, with experimental results shows good agreement. (author)

The corrosion and passivity of sputtered Mg–Ti alloys

International Nuclear Information System (INIS)

Song, Guang-Ling; Unocic, Kinga A.; Meyer, Harry; Cakmak, Ercan; Brady, Michael P.; Gannon, Paul E.; Himmer, Phil; Andrews, Quinn

2016-01-01

Highlights: • A supersaturated single phase Mg–Ti alloy can be obtained by magnetron sputtering. • The anodic dissolution of Mg–Ti alloy is inhibited by Ti addition. • The alloy becomes passive when Ti content is high and the alloy has become Ti based. • The formation of a continuous thin passive film is responsible for the passivation of the alloy. - Abstract: This study explored the possibility of forming a “stainless” Mg–Ti alloy. The electrochemical behavior of magnetron-sputtered Mg–Ti alloys was measured in a NaCl solution, and the surface films on the alloys were examined by XPS, SEM and TEM. Increased corrosion resistance was observed with increased Ti content in the sputtered Mg–Ti alloys, but passive-like behavior was not reached until the Ti level (atomic %) was higher than the Mg level. The surface film that formed on sputtered Mg–Ti based alloys in NaCl solution was thick, discontinuous and non-protective, whereas a thin, continuous and protective Mg and Ti oxide film was formed on a sputtered Ti–Mg based alloy.

An investigation of material properties and tribological performance of magnetron sputtered thin film coatings

Science.gov (United States)

Singh, Harpal

This dissertation is divided into two categories based upon lubrication functionality and its application. The categories are: Dry film lubrication and Fluid film lubrication with thin film coatings. Thin film coatings examined in this work were deposited using closed field unbalanced magnetron sputtering and RF-DC coupled magnetron sputtering systems. In Dry/Solid film lubrication, the mechanical, structural and tribological properties of two Molybdenum disulphide (MoS2) based coatings are examined and evaluated. Among the two coatings, one coating is doped with Ti (Ti-MoS2) and the other is a combination of metal, lubricant and oxide (Sb2O3/Au - MoS2). These coatings are known to provide low friction in vacuum environments. The goal of this work was to evaluate friction and wear performance of MoS2 doped coatings in unidirectional and reciprocating sliding contact under different environmental conditions. Sliding contact results showed friction and wear dependence on temperature and humidity. The formation and removal of transfer films and the recrystallization and reorientation of basal layers on the steel counterface was observed as the mechanism for low friction. Structural analysis revealed a relationship between the microstructural properties and tribological performance. It was also observed that the addition of dopants (Ti, Au, Sb 2O3) improved the mechanical properties as compared to pure MoS2 coatings. Further, the rolling contact performance of the coatings was measured on a five ball on rod tribometer and a Thrust bearing tribometer under vacuum and air environments. The rolling contact experiments indicated that life of the rolling components depend on the amount of material present between the contacts. Fluid film lubrication with thin film coatings investigates the possibilities to improve the performance and durability of tribological components when oils and thin films are synergistically coupled. In this work, the ability of a Diamond Like Carbon

High-vacuum pumping out of hydrogen isotopes by compressed and electrophysical pumps

International Nuclear Information System (INIS)

Bychkova, A.D.; Ershova, Z.V.; Saksaganskij, G.L.; Serebrennikov, D.V.

1982-01-01

To explain the selection of parameters of vacuum systems of projected thermonuclear devices, experiments are performed on the pumping-out of deuterium and tritium by high-vacuum pumps of different types. The values of the fast response of turbomolecular, diffusion vapour-mercury, magneto-discharge and titanium getter pumps in the operation pressure range are determined. The rate of sorption of hydrogen isotopes by non-spraying gas absorber of cial alloy depending on the amount of the gas absorbed and temperature, is measured. Gas current is determined by the pressure drop on the diagram of the known conductivity. Individual calibration of manometric converters for different gases using a mercury burette is performed preliminarily. The means of high-vacuum pumping-out that have been studied have the following values of fast response for tritium (relatively to protium): turbomolecular pump-0.95; evaporation getter pump-0.25; magneto-discharge pumps-0.65-0.9; cial alloy-0.1...0.5

Comparisons of physical and chemical sputtering in high density divertor plasmas with the Monte Carlo Impurity (MCI) transport model

International Nuclear Information System (INIS)

Evans, T.E.; Loh, Y.S.; West, W.P.; Finkenthal, D.F.

1997-11-01

The MCI transport model was used to compare chemical and physical sputtering for a DIII-D divertor plasma near detachment. With physical sputtering alone the integrated carbon influx was 8.4 x 10 19 neutral/s while physical plus chemical sputtering produced an integrated carbon influx of 1.7 x 10 21 neutrals/s. The average carbon concentration in the computational volume increased from 0.012% with only physical sputtering to 0.182% with both chemical and physical sputtering. This increase in the carbon inventory produced more radiated power which is in better agreement with experimental measurements

A high-intensity plasma-sputter heavy negative ion source

International Nuclear Information System (INIS)

Alton, G.D.; Mori, Y.; Takagi, A.; Ueno, A.; Fukumoto, S.

1989-01-01

A multicusp magnetic field plasma surface ion source, normally used for H/sup /minus//ion beam formation, has been modified for the generation of high-intensity, pulsed, heavy negative ion beams suitable for a variety of uses. To date, the source has been utilized to produce mA intensity pulsed beams of more than 24 species. A brief description of the source, and basic pulsed-mode operational data, (e.g., intensity versus cesium oven temperature, sputter probe voltage, and discharge pressure), are given. In addition, illustrative examples of intensity versus time and the mass distributions of ion beams extracted from a number of samples along with emittance data, are also presented. Preliminary results obtained during dc operation of the source under low discharge power conditions suggest that sources of this type may also be used to produce high-intensity (mA) dc beams. The results of these investigations are given, as well, and the technical issues that must be addressed for this mode of operation are discussed. 15 refs., 10 figs., 2 tabs

A High-Intensity, RF Plasma-Sputter Negative Ion Source

International Nuclear Information System (INIS)

Alton, G.D.; Bao, Y.; Cui, B.; Lohwasser, R.; Reed, C.A.; Zhang, T.

1999-01-01

A high-intensity, plasma-sputter negative-ion source based on the use of RF power for plasma generation has been developed that can be operated in either pulsed or dc modes. The source utilizes a high-Q, self-igniting, inductively coupled antenna system, operating at 80 MHz that has been optimized to generate Cs-seeded plasmas at low pressures (typically, - (610 microA); F - (100 microA); Si - (500 microA); S - (500 microA); P - (125 microA); Cl - (200 microA); Ni - (150 microA); Cu - (230 microA); Ge - (125 microA); As - (100 microA); Se - (200 microA); Ag - (70 microA); Pt - (125 microA); Au - (250 microA). The normalized emittance var e psilon n of the source at the 80% contour is: var e psilon n = 7.5 mm.mrad.(MeV) 1/2 . The design principles of the source, operational parameters, ion optics, emittance and intensities for a number of negative-ion species will be presented in this report

Ultra-high vacuum system of the Brookhaven National Synchrotron Light Source

International Nuclear Information System (INIS)

Foerster, C.L.

1995-01-01

The rings of the National Synchrotron Light Source (NSLS) have been supplying light to numerous users for approximately a decade and recently a fully conditioned machine vacuum at design currents was obtained. A brief description of the x-ray storage ring, the VUV storage ring and their current supply is given along with some of their features. The ultra-high vacuum system employed for the storage rings and their advantages for the necessary stored beam environments are discussed including, a brief history of time. 15 refs., 2 tabs., 8 figs

A study of some features of the ultra high vacuum systems for EPIC

International Nuclear Information System (INIS)

Elsey, R.J.; Bennett, J.R.J.; Dossett, A.J.

1977-01-01

This report covers the experimental work carried out towards the development of the ultra high vacuum for the proposed electron positron storage ring, EPIC. Experiments included outgassing tests on samples of materials and pump-down tests on full scale aluminium vessels. The effect of baking was investigated. The approval of the similar machine PETRA at Hamburg and the subsequent withdrawal of the EPIC proposal in October 1975 curtailed the vacuum work. The experiments reported here are therefore incomplete, but nevertheless proved useful in showing that there should have been no major problems with building the vacuum system for EPIC. (author)

ZrN coatings deposited by high power impulse magnetron sputtering and cathodic arc techniques

Energy Technology Data Exchange (ETDEWEB)

Purandare, Yashodhan, E-mail: Y.Purandare@shu.ac.uk; Ehiasarian, Arutiun; Hovsepian, Papken [Nanotechnology Centre for PVD Research, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Santana, Antonio [Ionbond AG Olten, Industriestrasse 211, CH-4600 Olten (Switzerland)

2014-05-15

Zirconium nitride (ZrN) coatings were deposited on 1 μm finish high speed steel and 316L stainless steel test coupons. Cathodic Arc (CA) and High Power Impulse Magnetron Sputtering (HIPIMS) + Unbalanced Magnetron Sputtering (UBM) techniques were utilized to deposit coatings. CA plasmas are known to be rich in metal and gas ions of the depositing species as well as macroparticles (droplets) emitted from the arc sports. Combining HIPIMS technique with UBM in the same deposition process facilitated increased ion bombardment on the depositing species during coating growth maintaining high deposition rate. Prior to coating deposition, substrates were pretreated with Zr{sup +} rich plasma, for both arc deposited and HIPIMS deposited coatings, which led to a very high scratch adhesion value (L{sub C2}) of 100 N. Characterization results revealed the overall thickness of the coatings in the range of 2.5 μm with hardness in the range of 30–40 GPa depending on the deposition technique. Cross-sectional transmission electron microscopy and tribological experiments such as dry sliding wear tests and corrosion studies have been utilized to study the effects of ion bombardment on the structure and properties of these coatings. In all the cases, HIPIMS assisted UBM deposited coating fared equal or better than the arc deposited coatings, the reasons being discussed in this paper. Thus H+U coatings provide a good alternative to arc deposited where smooth, dense coatings are required and macrodroplets cannot be tolerated.

Zero added oxygen for high quality sputtered ITO: A data science investigation of reduced Sn-content and added Zr

International Nuclear Information System (INIS)

Peshek, Timothy J.; Burst, James M.; Coutts, Timothy J.; Gessert, Timothy A.

2016-01-01

The authors demonstrate mobilities of >45 cm 2 /V s for sputtered tin-doped indium oxide (ITO) films at zero added oxygen. All films were deposited with 5 wt. % SnO 2 , instead of the more conventional 8–10 wt. %, and had varying ZrO 2 content from 0 to 3 wt. %, with a subsequent reduction in In 2 O 3 content. These films were deposited by radio-frequency magnetron sputtering from nominally stoichiometric targets with varying oxygen partial pressure in the sputter ambient. Anomalous behavior was discovered for films with no Zr-added, where a bimodality of high and low mobilities was discovered for nominally similar growth conditions. However, all films showed the lowest resistivity and highest mobilities when the oxygen partial pressure in the sputter ambient was zero. This result is contrasted with several other reports of ITO transport performance having a maximum for small but nonzero oxygen partial pressure. This result is attributed to the reduced concentration of SnO 2 . The addition of ZrO 2 yielded the highest mobilities at >55 cm 2 /V s and the films showed a modest increase in optical transmission with increasing Zr-content

Ultra-high vacuum system of the Brookhaven National Synchrotron Light Source

Energy Technology Data Exchange (ETDEWEB)

Foerster, C.L.

1995-12-31

The rings of the National Synchrotron Light Source (NSLS) have been supplying light to numerous users for approximately a decade and we recently enjoyed a fully conditioned machine vacuum at design currents. A brief description of the X-Ray storage ring, the VUV storage ring and their current supply is given along with some of their features. The ultra-high vacuum system employed for the storage rings and their advantages for the necessary stored beam environments are discussed including, a brief history of time. After several hundred amp hours of stored beam current operation, very little improvement in machine performance was seen due to conditioning. Sections of the rings were vented, to dry nitrogen and replacement components were pre-baked and pre-argon glow conditioned prior to installation. Very little machine conditioning was needed to return to operation after recovering vacuum due to well established conditioning procedures. All straight sections in the X-Ray ring and the VUV ring have been filled with various insertion devices and most are fully operational. Each storage ring has a computer controlled total pressure and partial pressure monitoring system for the ring and its beam ports, to insure good vacuum.

On the non-linear nature of the variation, with intensity, of high energy cathode sputtering, and the variation of the latter with temperature (1960)

International Nuclear Information System (INIS)

Cassignol, C.; Ranc, G.

1960-01-01

A new cathode sputtering theory at high energy is presented which has been elaborated in taking in account the non-linearity of this phenomenon with the density of the impinging ions. This theory allows to predict the influence of target temperature on the rate of cathode sputtering. This influence is experimentally demonstrated. (author) [fr

Electrical Properties of Thin-Film Capacitors Fabricated Using High Temperature Sputtered Modified Barium Titanate

Directory of Open Access Journals (Sweden)

Robert Mamazza

2012-04-01

Full Text Available Simple thin-film capacitor stacks were fabricated from sputter-deposited doped barium titanate dielectric films with sputtered Pt and/or Ni electrodes and characterized electrically. Here, we report small signal, low frequency capacitance and parallel resistance data measured as a function of applied DC bias, polarization versus applied electric field strength and DC load/unload experiments. These capacitors exhibited significant leakage (in the range 8–210 μA/cm2 and dielectric loss. Measured breakdown strength for the sputtered doped barium titanate films was in the range 200 kV/cm −2 MV/cm. For all devices tested, we observed clear evidence for dielectric saturation at applied electric field strengths above 100 kV/cm: saturated polarization was in the range 8–15 μC/cm2. When cycled under DC conditions, the maximum energy density measured for any of the capacitors tested here was ~4.7 × 10−2 W-h/liter based on the volume of the dielectric material only. This corresponds to a specific energy of ~8 × 10−3 W-h/kg, again calculated on a dielectric-only basis. These results are compared to those reported by other authors and a simple theoretical treatment provided that quantifies the maximum energy that can be stored in these and similar devices as a function of dielectric strength and saturation polarization. Finally, a predictive model is developed to provide guidance on how to tailor the relative permittivities of high-k dielectrics in order to optimize their energy storage capacities.

Influence of R.F. sputter parameters on the magnetic orientation of Co-Cr layers

NARCIS (Netherlands)

Lodder, J.C.; Wielinga, T.

1984-01-01

Co-Cr layers for the perpendicular recording mode were deposited by means of RF-sputtering. The most important sputter parameters, i.e. the RF sputter high voltage VRF, the argon pressure Par and the substrate holder temperature Tsh, gave an optimum value for perpendicular orientation of the

Computer simulation of sputtering of graphite target in magnetron sputtering device with two zones of erosion

Directory of Open Access Journals (Sweden)

Bogdanov R.V.

2015-03-01

Full Text Available A computer simulation program for discharge in a magnetron sputtering device with two erosion zones was developed. Basic laws of the graphite target sputtering process and transport of sputtered material to the substrate were taken into account in the Monte Carlo code. The results of computer simulation for radial distributions of density and energy flux of carbon atoms on the substrate (at different values of discharge current and pressure of the working gas confirmed the possibility of obtaining qualitative homogeneous films using this magnetron sputtering device. Also the discharge modes were determined for this magnetron sputtering device, in which it was possible to obtain such energy and density of carbon atoms fluxes, which were suitable for deposition of carbon films containing carbon nanotubes and other nanoparticles.

Sputtering of water ice

DEFF Research Database (Denmark)

Baragiola, R.A.; Vidal, R.A.; Svendsen, W.

2003-01-01

We present results of a range of experiments of sputtering of water ice together with a guide to the literature. We studied how sputtering depends on the projectile energy and fluence, ice growth temperature, irradiation temperature and external electric fields. We observed luminescence from...

Rf reactive sputtering of indium-tin-oxide films

International Nuclear Information System (INIS)

Tvarozek, V.; Novotny, I.; Harman, R.; Kovac, J.

1986-01-01

Films of indium-tin-oxide (ITO) have been deposited by rf reactive diode sputtering of metallic InSn alloy targets, or ceramic ITO targets, in an Ar and Ar+0 2 atmosphere. Electrical as well as optical properties of ITO films were controlled by varying sputtering parameters and by post-deposition heat-treatment in Ar, H 2 , N 2 , H 2 +N 2 ambients. The ITO films exhibited low resistivity approx. 2 x 10 -4 Ω cm, high transmittance approx. 90% in the visible spectral region and high reflectance approx. 80% in the near infra-red region. (author)

Simulation experiments and solar wind sputtering

International Nuclear Information System (INIS)

Griffith, J.E.; Papanastassiou, D.A.; Russell, W.A.; Tombrello, T.A.; Weller, R.A.

1978-01-01

In order to isolate the role played by solar wind sputtering from other lunar surface phenomena a number of simulation experiments were performed, including isotope abundance measurements of Ca sputtered from terrestrial fluorite and plagioclase by 50-keV and 130-keV 14 N beams, measurement of the energy distribution of U atoms sputtered with 80-keV 40 Ar, and measurement of the fraction of sputtered U atoms which stick on the surfaces used to collect these atoms. 10 references

Semi-automated high-efficiency reflectivity chamber for vacuum UV measurements

Science.gov (United States)

Wiley, James; Fleming, Brian; Renninger, Nicholas; Egan, Arika

2017-08-01

This paper presents the design and theory of operation for a semi-automated reflectivity chamber for ultraviolet optimized optics. A graphical user interface designed in LabVIEW controls the stages, interfaces with the detector system, takes semi-autonomous measurements, and monitors the system in case of error. Samples and an optical photodiode sit on an optics plate mounted to a rotation stage in the middle of the vacuum chamber. The optics plate rotates the samples and diode between an incident and reflected position to measure the absolute reflectivity of the samples at wavelengths limited by the monochromator operational bandpass of 70 nm to 550 nm. A collimating parabolic mirror on a fine steering tip-tilt motor enables beam steering for detector peak-ups. This chamber is designed to take measurements rapidly and with minimal oversight, increasing lab efficiency for high cadence and high accuracy vacuum UV reflectivity measurements.

A Magnetron Sputter Deposition System for the Development of X-Ray Multilayer Optics

Science.gov (United States)

Broadway, David

2015-01-01

The project objective is to establish the capability to deposit multilayer structures for x-ray, neutron, and extreme ultraviolet (EUV) optic applications through the development of a magnetron sputtering deposition system. A specific goal of this endeavor is to combine multilayer deposition technology with the replication process in order to enhance NASA Marshall Space Flight Center's (MSFC's) position as a world leader in the design of innovative x-ray instrumentation through the development of full shell replicated multilayer optics. The development of multilayer structures are absolutely necessary in order to advance the field of x-ray astronomy by pushing the limit for observing the universe to ever-increasing photon energies (i.e., up to 200 keV or higher), well beyond Chandra's (approx.10 keV) and NuStar's (approx.75 keV) capability. The addition of multilayer technology would significantly enhance the x-ray optics capability at MSFC and allow NASA to maintain its world leadership position in the development, fabrication, and design of innovative x-ray instrumentation, which would be the first of its kind by combining multilayer technology with the mirror replication process. This marriage of these technologies would allow astronomers to see the universe in a new light by pushing to higher energies that are out of reach with today's instruments. To this aim, a magnetron vacuum sputter deposition system for the deposition of novel multilayer thin film x-ray optics is proposed. A significant secondary use of the vacuum deposition system includes the capability to fabricate multilayers for applications in the field of EUV optics for solar physics, neutron optics, and x-ray optics for a broad range of applications including medical imaging.

Mechanical and structural properties of sputtered Ni/Ti multilayers

Energy Technology Data Exchange (ETDEWEB)

Senthil Kumar, M.; Boeni, P.; Tixier, S.; Clemens, D.; Horisberger, M. [Paul Scherrer Inst. (PSI), Villigen (Switzerland)

1997-09-01

Ni/Ti bilayers have been prepared by dc-magnetron sputtering in order to study their mechanical and structural properties. A remarkable reduction of stress is observed when the Ni layers are sputtered reactively in argon with a high partial pressure of air. The high angle x-ray diffraction studies show a tendency towards amorphisation of the Ni layers with increasing air flow. The low angle measurements indicate a substantial reduction of interdiffusion resulting in smoother interfaces with increasing air content. (author) 2 figs., 2 refs.

Growth Al{sub x}Ga{sub 1−x}N films on Si substrates by magnetron sputtering and high ammoniated two-step method

Energy Technology Data Exchange (ETDEWEB)

Wang, Xuewen, E-mail: wangxuew@nwu.edu.cn [School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Su, Xingxing; Hu, Feng; He, Lin; He, Lewan; Zhang, Zhiyong; Zhao, Wu [School of Information Science and Technology, Northwest University, Xi' an 710127 (China); Wang, Kai-Ge; Wang, Shuang [Institute of Photonics & Photo-Technology, International Joint Research Centre of Photoelectric Technology & Nano-functional Materials and Application, Northwest University, Xi' an 710069 (China)

2016-05-15

In this paper, Al{sub x}Ga{sub 1−x}N films on Si substrates were synthesized with adjusting process parameters by magnetron sputtering and high ammoniated two-step method innovatively, while gallium oxide was used as gallium target, and aluminum was used as aluminum target, ammonia gas and nitrogen were used as nitrogen source. The influence of process parameters on the quality of Al{sub x}Ga{sub 1−x}N films was researched with X-ray diffraction (XRD), scanning electron microscope (SEM), and Energy Diffraction Spectrum (EDS) for the prepared samples. The results showed that Al{sub x}Ga{sub 1−x}N film can be grown on the Si substrate by magnetron sputtering and high ammoniated two-step method, and substrate temperature, sputtering power, nitrogen concentration also have a great impact on the quality of Al{sub x}Ga{sub 1−x}N film. The sample was developed along (002) peak preferred with high orientation at 200 °C. High-quality film could be grown when the x is 0.32 in Al{sub x}Ga{sub 1−x}N films grown in 300 °C substrate temperature, 150 W sputtering power and 50% nitrogen concentration conditions, which is used for gas sensitive sensor. And compared stress by the measurement of Raman with an excitation wavelength λ = 532 nm. The samples were tested by photoluminescence (PL), which indicated two light-emitting peaks at 405 nm and 645 nm when the excitation wavelength is 325 nm. The measure in Hall Effect Measurement System showed that the carrier concentration and mobility were changed with different Al components. - Highlights: • Grow Al{sub 0.32}Ga{sub 0.68}N films on Si by RF sputtering and high ammoniated two-step method. • The sample was developed along (002) peak preferred with high orientation at 200 °C. • The growth technics of the film was employed for the preparation of gas sensors. • Carrier concentration and mobility were changed with different Al components.

Effects of residual hydrogen in sputtering atmosphere on structures and properties of amorphous In-Ga-Zn-O thin films

Energy Technology Data Exchange (ETDEWEB)

Tang, Haochun; Ishikawa, Kyohei; Ide, Keisuke [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio, E-mail: kamiya.t.aa@m.titech.ac.jp [Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); Ueda, Shigenori [National Institute for Materials Science, 1-2-1 Sengen, Tsukuba-city, Ibaraki 305-0047 (Japan); Ohashi, Naoki [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan); National Institute for Materials Science, 1-2-1 Sengen, Tsukuba-city, Ibaraki 305-0047 (Japan); Kumomi, Hideya [Materials Research Center for Element Strategy, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503 (Japan)

2015-11-28

We investigated the effects of residual hydrogen in sputtering atmosphere on subgap states and carrier transport in amorphous In-Ga-Zn-O (a-IGZO) using two sputtering systems with different base pressures of ∼10{sup −4} and 10{sup −7 }Pa (standard (STD) and ultrahigh vacuum (UHV) sputtering, respectively), which produce a-IGZO films with impurity hydrogen contents at the orders of 10{sup 20} and 10{sup 19 }cm{sup −3}, respectively. Several subgap states were observed by hard X-ray photoemission spectroscopy, i.e., peak-shape near-valence band maximum (near-VBM) states, shoulder-shape near-VBM states, peak-shape near-conduction band minimum (near-CBM) states, and step-wise near-CBM states. It was confirmed that the formation of these subgap states were affected strongly by the residual hydrogen (possibly H{sub 2}O). The step-wise near-CBM states were observed only in the STD films deposited without O{sub 2} gas flow and attributed to metallic In. Such step-wise near-CBM state was not detected in the other films including the UHV films even deposited without O{sub 2} flow, substantiating that the metallic In is segregated by the strong reduction effect of the hydrogen/H{sub 2}O. Similarly, the density of the near-VBM states was very high for the STD films deposited without O{sub 2}. These films had low film density and are consistent with a model that voids in the amorphous structure form a part of the near-VBM states. On the other hand, the UHV films had high film densities and much less near-VBM states, keeping the possibility that some of the near-VBM states, in particular, of the peak-shape ones, originate from –OH and weakly bonded oxygen. These results indicate that 2% of excess O{sub 2} flow is required for the STD sputtering to compensate the effects of the residual hydrogen/H{sub 2}O. The high-density near-VBM states and the metallic In segregation deteriorated the electron mobility to 0.4 cm{sup 2}/(V s)

Magnetospheric ion sputtering and water ice grain size at Europa

Science.gov (United States)

Cassidy, T. A.; Paranicas, C. P.; Shirley, J. H.; Dalton, J. B., III; Teolis, B. D.; Johnson, R. E.; Kamp, L.; Hendrix, A. R.

2013-03-01

We present the first calculation of Europa's sputtering (ion erosion) rate as a function of position on Europa's surface. We find a global sputtering rate of 2×1027 H2O s-1, some of which leaves the surface in the form of O2 and H2. The calculated O2 production rate is 1×1026 O2 s-1, H2 production is twice that value. The total sputtering rate (including all species) peaks at the trailing hemisphere apex and decreases to about 1/3rd of the peak value at the leading hemisphere apex. O2 and H2 sputtering, by contrast, is confined almost entirely to the trailing hemisphere. Most sputtering is done by energetic sulfur ions (100s of keV to MeV), but most of the O2 and H2 production is done by cold oxygen ions (temperature ∼ 100 eV, total energy ∼ 500 eV). As a part of the sputtering rate calculation we compared experimental sputtering yields with analytic estimates. We found that the experimental data are well approximated by the expressions of Famá et al. for ions with energies less than 100 keV (Famá, M., Shi, J., Baragiola, R.A., 2008. Sputtering of ice by low-energy ions. Surf. Sci. 602, 156-161), while the expressions from Johnson et al. fit the data best at higher energies (Johnson, R.E., Burger, M.H., Cassidy, T.A., Leblanc, F., Marconi, M., Smyth, W.H., 2009. Composition and Detection of Europa's Sputter-Induced Atmosphere, in: Pappalardo, R.T., McKinnon, W.B., Khurana, K.K. (Eds.), Europa. University of Arizona Press, Tucson.). We compare the calculated sputtering rate with estimates of water ice regolith grain size as estimated from Galileo Near-Infrared Mapping Spectrometer (NIMS) data, and find that they are strongly correlated as previously suggested by Clark et al. (Clark, R.N., Fanale, F.P., Zent, A.P., 1983. Frost grain size metamorphism: Implications for remote sensing of planetary surfaces. Icarus 56, 233-245.). The mechanism responsible for the sputtering rate/grain size link is uncertain. We also report a surface composition estimate using

Decay rate of the false vacuum at high tempratures

International Nuclear Information System (INIS)

Eboli, O.J.P.; Marques, G.C.

1984-01-01

Within the semiclassical approach, the high temperaure behaviour of the decay rate of the metastable vacuum in Field Theory is investigated. It is shown that, contrarily to what has been proposed in the literature, the pre-exponential factor exhibits a nontrivial dependence on the temperature. Furthermore, this dependence is such that at very high temperatures it is as important as the exponential factor and consequently it spoils many conclusions drawn up to now on Cosmological Phase Transitions. (Author) [pt

LHCb: Design of a Highly Optimised Vacuum Chamber Support for the LHCb Experiment

CERN Multimedia

Leduc, L; Veness, R

2011-01-01

The beam vacuum chamber in the LHCb experimental area passes through the centre of a large aperture dipole magnet. The vacuum chamber and all its support systems lie in the acceptance of the detector, so must be highly optimised for transparency to particles. As part of the upgrade programme for the LHCb vacuum system, the support system has been re-designed using advanced lightweight materials. In this paper we discuss the physics motivation for the modifications, the criteria for the selection of materials and tests performed to qualify them for the particular environment of a particle physics experiment. We also present the design of the re-optimised support system.

Spectroscopic imaging of self-organization in high power impulse magnetron sputtering plasmas

International Nuclear Information System (INIS)

Andersson, Joakim; Ni, Pavel; Anders, André

2013-01-01

Excitation and ionization conditions in traveling ionization zones of high power impulse magnetron sputtering plasmas were investigated using fast camera imaging through interference filters. The images, taken in end-on and side-on views using light of selected gas and target atom and ion spectral lines, suggest that ionization zones are regions of enhanced densities of electrons, and excited atoms and ions. Excited atoms and ions of the target material (Al) are strongly concentrated near the target surface. Images from the highest excitation energies exhibit the most localized regions, suggesting localized Ohmic heating consistent with double layer formation

Investigation of the High Mobility IGZO Thin Films by Using Co-Sputtering Method

OpenAIRE

Hsu, Chao-Ming; Tzou, Wen-Cheng; Yang, Cheng-Fu; Liou, Yu-Jhen

2015-01-01

High transmittance ratio in visible range, low resistivity, and high mobility of IGZO thin films were prepared at room temperature for 30 min by co-sputtering of Zn2Ga2O5 (Ga2O3 + 2 ZnO, GZO) ceramic and In2O3 ceramic at the same time. The deposition power of pure In2O3 ceramic target was fixed at 100 W and the deposition power of GZO ceramic target was changed from 80 W to 140 W. We chose to investigate the deposition power of GZO ceramic target on the properties of IGZO thin films. From the...

Structure and tribological behavior of Pb-Ti/MoS2 nanoscaled multilayer films deposited by magnetron sputtering method

Science.gov (United States)

Li, Hao; Xie, Mingling; Zhang, Guangan; Fan, Xiaoqiang; Li, Xia; Zhu, Minhao; Wang, Liping

2018-03-01

The Pb-Ti/MoS2 nanoscaled multilayer films with different bilayer period were deposited by unbalanced magnetron sputtering system. The morphology, microstructure, mechanical and tribological properties of the films were investigated. It was found that the film changed from multilayer structure to composite structure as the bilayer period decreased from 25 nm to 6 nm, due to the diffusion effect. The multilayer film showed a pronounced (002) diffraction peak, the growth of the MoS2 platelets below the interface were affected by Pb and Ti, and the c-axis of MoS2 platelets were inclined to the substrate at an angle of -30° to 30°. The hardness of the film ranged from 5.9 to 7.2 GPa depending on the bilayer period. The tribological behavior of the films was performed under vacuum, and the friction coefficient were typically below 0.25. Furthermore, the nanoscale multilayer film with a bilayer period of 20 nm exhibits much better mechanical and tribological properties than pure MoS2. The result indicates that the nanoscale multilayer is a design methodology for developing high basal plane oriented and vacuum solid lubricating MoS2 based materials.

Energy sharing and sputtering in low-energy collision cascades

International Nuclear Information System (INIS)

Weller, R.A.; Weller, M.R.

1982-01-01

Using a non-linear transport equation to describe the energy-sharing process in an isotropic collision cascade, we have numerically calculated sputtered particle velocity spectra for several very low energy (=< 10 eV) primary recoil distributions. Our formulation of the sputtering process is essentially that used in the linear model and our equations yield the familiar linear model results in the appropriate limit. Discrepancies between our calculations and the linear model results in other cases may be understood by considering the effects of the linear model assumptions on the sputtering yield at very low energies. Our calculations are also compared with recent experimental results investigating ion-explosion sputtering. The results of this comparison support the conclusion that in insulators sputtering is initiated by very low energy recoil atoms when the energy of the incident beam is high enough that the stopping power is dominated by the electronic contribution. The calculations also suggest that energy spectra similar to those for evaporation may result from non-equilibrium processes but that the apparent temperatures of evaporation are not related in a simple way to any real temperature within the target. (author)

Implantation, recoil implantation, and sputtering

International Nuclear Information System (INIS)

Kelly, R.

1984-01-01

The implantation and sputtering mechanisms which are relevant to ion bombardment of surfaces are described. These are: collision, thermal, electronic and photon-induced sputtering. 135 refs.; 36 figs.; 9 tabs

Composition changes in sputter deposition of Y-Ba-Cu-O films

International Nuclear Information System (INIS)

Hoshi, Y.; Naoe, M.

1989-01-01

The authors discuss the mechanism of the composition change in sputter deposition of Y-BA-Cu-O film from YBa 2 Cu 3 O 7-chi target investigated by means of a rf planar magnetron sputtering apparatus. Film composition changes significantly with not only substrate temperature Ts and sputtering gas pressure, but also substrate position. Lack of Cu and Ba content is significant in the film deposited at the substrate position just above the erosion area of the sputtering target. Suppression of bombardment of the substrate surface by negative ions emitted from the target and substrate is effective in increasing Cu and Ba content in the film. These results indicate not only that the sticking probability of the sputtered particles changes with Ts and incident particle energy, but also that high energy particle bombardment of the substrate surface plays an important role in the change of the film composition

X-ray photoelectron spectroscopy of nano-multilayered Zr-O/Al-O coatings deposited by cathodic vacuum arc plasma

International Nuclear Information System (INIS)

Zhitomirsky, V.N.; Kim, S.K.; Burstein, L.; Boxman, R.L.

2010-01-01

Nano-multilayered Zr-O/Al-O coatings with alternating Zr-O and Al-O layers having a bi-layer period of 6-7 nm and total coating thickness of 1.0-1.2 μm were deposited using a cathodic vacuum arc plasma process on rotating Si substrates. Plasmas generated from two cathodes, Zr and Al, were deposited simultaneously in a mixture of Ar and O 2 background gases. The Zr-O/Al-O coatings, as well as bulk ZrO 2 and Al 2 O 3 reference samples, were studied using X-ray photoelectron spectroscopy (XPS). The XPS spectra were analyzed on the surface and after sputtering with a 4 kV Ar + ion gun. High resolution angle resolved spectra were obtained at three take-off angles: 15 o , 45 o and 75 o relative to the sample surface. It was shown that preferential sputtering of oxygen took place during XPS of bulk reference ZrO 2 samples, producing ZrO and free Zr along with ZrO 2 in the XPS spectra. In contrast, no preferential sputtering was observed with Al 2 O 3 reference samples. The Zr-O/Al-O coatings contained a large amount of free metals along with their oxides. Free Zr and Al were observed in the coating spectra both before and after sputtering, and thus cannot be due solely to preferential sputtering. Transmission electron microscopy revealed that the Zr-O/Al-O coatings had a nano-multilayered structure with well distinguished alternating layers. However, both of the alternating layers of the coating contained of a mixture of aluminum and zirconium oxides and free Al and Zr metals. The concentration of Zr and Al changed periodically with distance normal to the coating surface: the Zr maximum coincided with the Al minimum and vice versa. However the concentration of Zr in both alternating layers was significantly larger than that of Al. Despite the large free metal concentration, the Knoop hardness, 21.5 GPa, was relatively high, which might be attributed to super-lattice formation or formation of a metal-oxide nanocomposite within the layers.

Mobility Optimization in LaxBa1-xSnO3 Thin Films Deposited via High Pressure Oxygen Sputtering

Science.gov (United States)

Postiglione, William Michael

BaSnO3 (BSO) is one of the most promising semiconducting oxides currently being explored for use in future electronic applications. BSO possesses a unique combination of high room temperature mobility (even at very high carrier concentrations, > 1019 cm-3), wide band gap, and high temperature stability, making it a potentially useful material for myriad applications. Significant challenges remain however in optimizing the properties and processing of epitaxial BSO, a critical step towards industrial applications. In this study we investigate the viability of using high pressure oxygen sputtering to produce high mobility La-doped BSO thin films. In the first part of our investigation we synthesized, using solid state reaction, phase-pure stoichiometric polycrystalline 2% La-doped BaSnO 3 for use as a target material in our sputtering system. We verified the experimental bulk lattice constant, 4.117 A, to be in good agreement with literature values. Next, we set out to optimize the growth conditions for DC sputtering of La doped BaSnO3. We found that mobility for all our films increased monotonically with deposition temperature, suggesting the optimum temperature for deposition is > 900 °C and implicating a likely improvement in transport properties with post-growth thermal anneal. We then preformed systematic studies aimed at probing the effects of varying thickness and deposition rate to optimize the structural and electronic transport properties in unbuffered BSO films. In this report we demonstrate the ability to grow 2% La BSO thin films with an effective dopant activation of essentially 100%. Our films showed fully relaxed (bulk), out-of-plane lattice parameter values when deposited on LaAlO3, MgO, and (LaAlO3)0.3(Sr2 TaAlO6)0.7 substrates, and slightly expanded out-of-plane lattice parameters for films deposited on SrTiO3, GdScO3, and PrScO3 substrates. The surface roughness's of our films were measured via AFM, and determined to be on the nm scale or better

Pressure measurements in the AGS Booster ultra-high vacuum system

International Nuclear Information System (INIS)

Gabusi, J.; Geller, J.; Hseuh, H.C.; Mapes, M.; Stattel, P.

1992-01-01

An average pressure of mid 10 -11 Torr has been achieved and maintained in the AGS Booster ring vacuum system during its first year of operation. This ultra-high vacuum system is monitored through remote controlled Bayard-Alpert Gauges (BAGs). The characteristics of the pressure measurements with BAGs over the long cable lengths (up to 200 m) and under various accelerator operating conditions will be described. Two types of noise in the pressure readouts have been identified; the electromagnetic interference (EMI) associated with the acceleration cycles of the Booster and the environment noise associated with the temperature of the collector cables. The magnitude of the noise pickup depends on the routing of the collector cables and reaches the equivalent pressure of low 10 -9 Torr

An ultrahigh vacuum, low-energy ion-assisted deposition system for III-V semiconductor film growth

Science.gov (United States)

Rohde, S.; Barnett, S. A.; Choi, C.-H.

1989-06-01

A novel ion-assisted deposition system is described in which the substrate and growing film can be bombarded with high current densities (greater than 1 mA/sq cm) of very low energy (10-200 eV) ions. The system design philosophy is similar to that used in III-V semiconductor molecular-beam epitaxy systems: the chamber is an all-metal ultrahigh vacuum system with liquid-nitrogen-cooled shrouds, Knudsen-cell evaporation sources, a sample insertion load-lock, and a 30-kV reflection high-energy electron diffraction system. III-V semiconductor film growth is achieved using evaporated group-V fluxes and group-III elemental fluxes sputtered from high-purity targets using ions extracted from a triode glow discharge. Using an In target and an As effusion cell, InAs deposition rates R of 2 microns/h have been obtained. Epitaxial growth of InAs was observed on both GaSb(100) and Si(100) substrates.

High efficient vacuum arc plant for coating deposition

International Nuclear Information System (INIS)

Aksenov, I.I.; Belous, V.A.

2008-01-01

A number of progressive technical solutions are used in the 'Bulat-9' machine designed for vacuum arc coating deposition. The features of the machine are: a dome shaped working chamber that allows to 'wash' its inner surfaces with hot nitrogen or argon gas; a system of automatic loading/unloading of articles to be treated into the chamber through its bottom; shielding of the inner surfaces of the chamber by heated panels; improved vacuum arc plasma sources including filtered one; four ported power supply for the vacuum arc discharges; LC oscillatory circuits suppressing microarcs on the substrate; the system of automatic control of a working process. The said technical features cause the apparatus originality and novelty preserved up to-day

Corrosion behavior of Al-Fe-sputtering-coated steel, high chromium steels, refractory metals and ceramics in high temperature Pb-Bi

International Nuclear Information System (INIS)

Abu Khalid, Rivai; Minoru, Takahashi

2007-01-01

Corrosion tests of Al-Fe-coated steel, high chromium steels, refractory metals and ceramics were carried out in high temperature Pb-Bi at 700 C degrees. Oxygen concentrations in this experiment were 6.8*10 -7 wt.% for Al-Fe-coated steels and 5*10 -6 wt.% for high chromium steels, refractory metals and ceramics. All specimens were immersed in molten Pb-Bi in a corrosion test pot for 1.000 hours. Coating was done with using the unbalanced magnetron sputtering (UBMS) technique to protect the steel from corrosion. Sputtering targets were Al and SUS-304. Al-Fe alloy was coated on STBA26 samples. The Al-Fe alloy-coated layer could be a good protection layer on the surface of steel. The whole of the Al-Fe-coated layer still remained on the base surface of specimen. No penetration of Pb-Bi into this layer and the matrix of the specimen. For high chromium steels i.e. SUS430 and Recloy10, the oxide layer formed in the early time could not prevent the penetration of Pb-Bi into the base of the steels. Refractory metals of tungsten (W) and molybdenum (Mo) had high corrosion resistance with no penetration of Pb-Bi into their matrix. Penetration of Pb-Bi into the matrix of niobium (Nb) was observed. Ceramic materials were SiC and Ti 3 SiC 2 . The ceramic materials of SiC and Ti 3 SiC 2 had high corrosion resistance with no penetration of Pb-Bi into their matrix. (authors)

Sputter deposited titanium disilicide at high substrate temperatures

Science.gov (United States)

Tanielian, M.; Blackstone, S.; Lajos, R.

1984-08-01

Titanium disilicide films were sputter deposited from a composite TiSi2.1 target on bare silicon wafers both at room temperature and at 600 °C. The room temperature as-deposited films require a 900 °C sintering step to reduce their resistivity. On the other hand, the as-deposited 600 °C films are fully reacted, polycrystalline, have no oxygen contamination, large grain sizes, and are oxidation resistant. Further annealing of these films at 900 °C produces no changes in their crystal structure, composition, resistivity, or grain size.

High ion charge states in a high-current, short-pulse, vacuum ARC ion sources

International Nuclear Information System (INIS)

Anders, A.; Brown, I.; MacGill, R.; Dickinson, M.

1996-01-01

Ions of the cathode material are formed at vacuum arc cathode spots and extracted by a grid system. The ion charge states (typically 1-4) depend on the cathode material and only little on the discharge current as long as the current is low. Here the authors report on experiments with short pulses (several μs) and high currents (several kA); this regime of operation is thus approaching a more vacuum spark-like regime. Mean ion charge states of up to 6.2 for tungsten and 3.7 for titanium have been measured, with the corresponding maximum charge states of up to 8+ and 6+, respectively. The results are discussed in terms of Saha calculations and freezing of the charge state distribution

High ion charge states in a high-current, short-pulse, vacuum arc ion source

International Nuclear Information System (INIS)

Anders, A.; Brown, I.; MacGill, R.; Dickinson, M.

1995-09-01

Ions of the cathode material are formed at vacuum arc cathode spots and extracted by a grid system. The ion charge states (typically 1--4) depend on the cathode material and only little on the discharge current as long as the current is low. Here the authors report on experiments with short pulses (several micros) and high currents (several kA); this regime of operation is thus approaching a more vacuum spark-like regime. Mean ion charge states of up to 6.2 for tungsten and 3.7 for titanium have been measured, with the corresponding maximum charge states of up to 8+ and 6+, respectively. The results are discussed in terms of Saha calculations and freezing of the charge state distribution

Surface composition of magnetron sputtered Pt-Co thin film catalyst for proton exchange membrane fuel cells

Energy Technology Data Exchange (ETDEWEB)

Vorokhta, Mykhailo, E-mail: vorohtam@gmail.com [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Khalakhan, Ivan; Václavů, Michal [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Kovács, Gábor; Kozlov, Sergey M. [Departament de Química Física and Institut de Química Teòrica i Computacional (IQTCUB), Universitat de Barcelona, c/ Martí i Franquès 1, 08028 Barcelona (Spain); Kúš, Peter; Skála, Tomáš; Tsud, Natalia; Lavková, Jaroslava [Charles University in Prague, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, V Holešovičkách 2, 18000 Prague (Czech Republic); Potin, Valerie [Laboratoire Interdisciplinaire Carnot de Bourgogne, UMR 6303 CNRS-Université Bourgogne, 9 Av. A. Savary, BP 47870, F-21078 Dijon Cedex (France); and others

2016-03-01

Graphical abstract: - Highlights: • Nanostructured Pt-Co thin catalyst films were grown on carbon by magnetron sputtering. • The surface composition of the nanostructured Pt-Co films was investigated by surface analysis techniques. • We carried out modeling of Pt-Co nanoalloys by computational methods. • Both experiment and modeling based on density functional theory showed that the surface of Pt-Co nanoparticles is almost exclusively composed of Pt atoms. - Abstract: Recently we have tested a magnetron sputtered Pt-Co catalyst in a hydrogen-fed proton exchange membrane fuel cell and showed its high catalytic activity for the oxygen reduction reaction. Here we present further investigation of the magnetron sputtered Pt-Co thin film catalyst by both experimental and theoretical methods. Scanning electron microscopy and transmission electron microscopy experiments confirmed the nanostructured character of the catalyst. The surface composition of as-deposited and annealed at 773 K Pt-Co films was investigated by surface analysis techniques, such as synchrotron radiation photoelectron spectroscopy and X-ray photoelectron spectroscopy. Modeling based on density functional theory showed that the surface of 6 nm large 1:1 Pt-Co nanoparticles is almost exclusively composed of Pt atoms (>90%) at typical operation conditions and the Co content does not exceed 20% at 773 K, in agreement with the experimental characterization of such films annealed in vacuum. According to experiment, the density of valence states of surface atoms in Pt-Co nanostructures is shifted by 0.3 eV to higher energies, which can be associated with their higher activity in the oxygen reduction reaction. The changes in electronic structure caused by alloying are also reflected in the measured Pt 4f, Co 3p and Co 2p photoelectron peak binding energies.

Single-crystal-like GdNdOx thin films on silicon substrates by magnetron sputtering and high-temperature annealing for crystal seed layer application

Directory of Open Access Journals (Sweden)

Ziwei Wang

2016-06-01

Full Text Available Single-crystal-like rare earth oxide thin films on silicon (Si substrates were fabricated by magnetron sputtering and high-temperature annealing processes. A 30-nm-thick high-quality GdNdOx (GNO film was deposited using a high-temperature sputtering process at 500°C. A Gd2O3 and Nd2O3 mixture was used as the sputtering target, in which the proportions of Gd2O3 and Nd2O3 were controlled to make the GNO’s lattice parameter match that of the Si substrate. To further improve the quality of the GNO film, a post-deposition annealing process was performed at a temperature of 1000°C. The GNO films exhibited a strong preferred orientation on the Si substrate. In addition, an Al/GNO/Si capacitor was fabricated to evaluate the dielectric constant and leakage current of the GNO films. It was determined that the single-crystal-like GNO films on the Si substrates have potential for use as an insulator layer for semiconductor-on-insulator and semiconductor/insulator multilayer applications.

Ultra high vacuum compatible microwave beam launcher for ECRH in SST - 1

International Nuclear Information System (INIS)

Shukla, B.K.; Sathyanarayana, K.; Biswas, P.; Pragnesh, D.; Bora, D.

2005-01-01

Microwave beam launcher for Electron Cyclotron Resonance Heating (ECRH) system is used to focus the microwave beam at plasma center of SST -1. The beam launcher consists of an ultra high vacuum (UHV) compatible mirror box with two mirrors mounted in it. One mirror is focusing mirror while other one is a plane mirror. The total volume of the launcher is ∼ 60000 cc and the total surface area exposed to UHV is around ∼ 1.0x10 4 cm 2 . The mirrors are cooled with water for high power and long pulse operation. UHV compatible SS hoses provide flexible cooling connection to the mirrors. Flexible cooling connection helps in adjustment and steering of the mirrors. SS hoses are welded at both the ends and this is necessary to avoid any flange connection inside ultra high vacuum. The system has been tested for UHV compatibility. The leak rate is checked with helium leak detector and found better than l x 10 -9 mbar.lt/s. The system has been baked to 150 deg C for ∼14 hours and the ultimate vacuum achieved with turbomolecular pump (TMP) is ∼ 5x10 -9 mbar. The mirror assembly is tested for leak in pressurized condition using a sniffer probe. The mirrors of the launcher along with the welded bellow are pressurized with helium gas up to a water equivalent pressure of ∼3kg/cm 2 . No increase in the background (∼-10 -6 mbar.lt/s) of the sniffer probes has been observed during the test. The plane mirror is connected with two UHV linear motion feedthroughs with suitable hinges and smooth movement is checked in vacuum. (author)

Evaluation of residual stress in sputtered tantalum thin-film

Energy Technology Data Exchange (ETDEWEB)

Al-masha’al, Asa’ad, E-mail: asaad.al@ed.ac.uk; Bunting, Andrew; Cheung, Rebecca

2016-05-15

Highlights: • Tantalum thin-films have been deposited by DC magnetron sputtering system. • Thin-film stress is observed to be strongly influenced by sputtering pressure. • Transition towards the compressive stress is ascribed to the annealing at 300 °C. • Expose thin-film to air ambient or ion bombardment lead to a noticeable change in the residual stress. - Abstract: The influence of deposition conditions on the residual stress of sputtered tantalum thin-film has been evaluated in the present study. Films have been deposited by DC magnetron sputtering and curvature measurement method has been employed to calculate the residual stress of the films. Transitions of tantalum film stress from compressive to tensile state have been observed as the sputtering pressure increases. Also, the effect of annealing process at temperature range of 90–300 °C in oxygen ambient on the residual stress of the films has been studied. The results demonstrate that the residual stress of the films that have been deposited at lower sputtering pressure has become more compressive when annealed at 300 °C. Furthermore, the impact of exposure to atmospheric ambient on the tantalum film stress has been investigated by monitoring the variation of the residual stress of both annealed and unannealed films over time. The as-deposited films have been exposed to pure Argon energy bombardment and as result, a high compressive stress has been developed in the films.

Thick sputtered tantalum coatings for high-temperature energy conversion applications

Energy Technology Data Exchange (ETDEWEB)

Stelmakh, Veronika, E-mail: stelmakh@mit.edu; Peykov, Daniel; Chan, Walker R.; Senkevich, Jay J.; Joannopoulos, John D.; Soljačić, Marin; Celanovic, Ivan [Institute for Soldier Nanotechnologies, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Castillo, Robert; Coulter, Kent; Wei, Ronghua [Materials Engineering Department, Southwest Research Institute, San Antonio, Texas 78238 (United States)

2015-11-15

Thick sputtered tantalum (Ta) coatings on polished Inconel were investigated as a potential replacement for bulk refractory metal substrates used for high-temperature emitters and absorbers in thermophotovoltaic energy conversion applications. In these applications, high-temperature stability and high reflectance of the surface in the infrared wavelength range are critical in order to sustain operational temperatures and reduce losses due to waste heat. The reflectance of the coatings (8 and 30 μm) was characterized with a conformal protective hafnia layer as-deposited and after one hour anneals at 700, 900, and 1100 °C. To further understand the high-temperature performance of the coatings, the microstructural evolution was investigated as a function of annealing temperature. X-ray diffraction was used to analyze the texture and residual stress in the coatings at four reflections (220, 310, 222, and 321), as-deposited and after anneal. No significant changes in roughness, reflectance, or stress were observed. No delamination or cracking occurred, even after annealing the coatings at 1100 °C. Overall, the results of this study suggest that the thick Ta coatings are a promising alternative to bulk substrates and pave the way for a relatively low-cost and easily integrated platform for nanostructured devices in high-temperature energy conversion applications.

Arc generation from sputtering plasma-dielectric inclusion interactions

International Nuclear Information System (INIS)

Wickersham, C.E. Jr.; Poole, J.E.; Fan, J.S.

2002-01-01

Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al 2 O 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect density, and the intensity of the optical emission from the arcing plasma indicates that the critical aluminum oxide inclusion area for arcing is 0.22±0.1 mm2 when the sputtering plasma sheath dark-space λ d , is 0.51 mm. Inclusions with areas greater than this critical value readily induce arcing and macroparticle ejection during sputtering. Inclusions below this critical size do not cause arcing or macroparticle ejection. When the inclusion major axis is longer than 2λ d and lies perpendicular to the sputter erosion track tangent, the arcing activity increases significantly over the case where the inclusion major axis lies parallel to the erosion track tangent

Argonne inverted sputter source

International Nuclear Information System (INIS)

Yntema, J.L.; Billquist, P.J.

1983-01-01

The emittance of the inverted sputter source with immersion lenses was measured to be about 5π mm mrad MeV/sup 1/2/ at the 75% level over a wide range of beam intensities. The use of the source in experiments with radioactive sputter targets and hydrogen loaded targets is described. Self contamination of the source is discussed

Studies of thin films of Ti- Zr -V as non-evaporable getter films prepared by RF sputtering

International Nuclear Information System (INIS)

Gupta, Nidhi; Jagannath,; Sharma, R. K.; Gadkari, S. C.; Muthe, K. P.; Mukundhan, R.; Gupta, S. K.

2013-01-01

Non-Evaporable Getter (NEG) films of the Ti-Zr-V prepared on stainless steel substrates by Radio Frequency sputtering. To observe its getter behavior at the lowest activation temperature, the sample is heated continuously at different temperatures (100°C, 150°C, 200°C and 250°C) for 2 hours. The changes of the surface chemical composition at different temperaturesare analyzed by using XPS and SEM (Scanning Electron Microscopy) techniques. The volume elemental composition of the film has been measured by energy dispersive X-ray spectroscopy (EDX). The in-situ XPS measurements of the activated getter films show the disappearance of the superficial oxide layer through the variation in the oxygen stoichiometry during thermal activation. Results of these studies show that the deposited films of Ti-Zr-V could be used as NEG to produce extreme high vacuum.

Process of treating carbonaceous materials. [400 to 700/sup 0/C, high vacuum

Energy Technology Data Exchange (ETDEWEB)

Parker, O J

1913-11-24

A process is given of treating carbonaceous materials, characterized by the material being submitted simultaneously to a temperature of 400 to 700/sup 0/C, a pressure between 5.0 mm of mercury under atmospheric and a practically perfect vacuum, and by the volatile material able to condense under the vacuum used being condensed practically under the same pressure for the production of a high proportion of condensable products and a superior fuel.

Nanoporous zinc oxide films prepared by magnetron sputtering

International Nuclear Information System (INIS)

Ghimpu, L.; Lupan, O.; Popescu, L.; Tiginyanu, I.M.

2011-01-01

In this paper we demonstrate an inexpensive approach for the fabrication of nanoporous zinc oxide films by using magnetron sputtering. Study of the structural properties proves the crystallographic perfection of porous nanostructures and the possibility of its controlling by adjusting the technological parameters in the growth process. The XRD pattern of nanoporous ZnO films exhibits high intensity of the peaks relative to the background signal which is indicative of the ZnO hexagonal phase and a good crystallinity of the samples grown by magnetron sputtering.

High Contrast Vacuum Nuller Testbed (VNT) Contrast, Performance and Null Control

Science.gov (United States)

Lyon, Richard G.; Clampin, Mark; Petrone, Peter; Mallik, Udayan; Madison, Timothy; Bolcar, Matthew R.

2012-01-01

Herein we report on our Visible Nulling Coronagraph high-contrast result of 109 contrast averaged over a focal planeregion extending from 14 D with the Vacuum Nuller Testbed (VNT) in a vibration isolated vacuum chamber. TheVNC is a hybrid interferometriccoronagraphic approach for exoplanet science. It operates with high Lyot stopefficiency for filled, segmented and sparse or diluted-aperture telescopes, thereby spanning the range of potential futureNASA flight telescopes. NASAGoddard Space Flight Center (GSFC) has a well-established effort to develop the VNCand its technologies, and has developed an incremental sequence of VNC testbeds to advance this approach and itsenabling technologies. These testbeds have enabled advancement of high-contrast, visible light, nulling interferometry tounprecedented levels. The VNC is based on a modified Mach-Zehnder nulling interferometer, with a W configurationto accommodate a hex-packed MEMS based deformable mirror, a coherent fiber bundle and achromatic phase shifters.We give an overview of the VNT and discuss the high-contrast laboratory results, the optical configuration, criticaltechnologies and null sensing and control.

High contrast vacuum nuller testbed (VNT) contrast, performance, and null control

Science.gov (United States)

Lyon, Richard G.; Clampin, Mark; Petrone, Peter; Mallik, Udayan; Madison, Timothy; Bolcar, Matthew R.

2012-09-01

Herein we report on our Visible Nulling Coronagraph high-contrast result of 109 contrast averaged over a focal plane region extending from 1 - 4 λ/D with the Vacuum Nuller Testbed (VNT) in a vibration isolated vacuum chamber. The VNC is a hybrid interferometric/coronagraphic approach for exoplanet science. It operates with high Lyot stop efficiency for filled, segmented and sparse or diluted-aperture telescopes, thereby spanning the range of potential future NASA flight telescopes. NASA/Goddard Space Flight Center (GSFC) has a well-established effort to develop the VNC and its technologies, and has developed an incremental sequence of VNC testbeds to advance this approach and its enabling technologies. These testbeds have enabled advancement of high-contrast, visible light, nulling interferometry to unprecedented levels. The VNC is based on a modified Mach-Zehnder nulling interferometer, with a “W” configuration to accommodate a hex-packed MEMS based deformable mirror, a coherent fiber bundle and achromatic phase shifters. We give an overview of the VNT and discuss the high-contrast laboratory results, the optical configuration, critical technologies and null sensing and control.

Sputtering and reflection of self-bombardment of tungsten material

International Nuclear Information System (INIS)

Niu, Guo-jian; Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi; Luo, Guang-nan

2015-01-01

In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate

Sputtering and reflection of self-bombardment of tungsten material

Energy Technology Data Exchange (ETDEWEB)

Niu, Guo-jian [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Li, Xiao-chun; Xu, Qian; Yang, Zhong-shi [Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Luo, Guang-nan, E-mail: gnluo@ipp.ac.cn [University of Science and Technology of China, Hefei (China); Institute of Plasma Physics Chinese Academy of Sciences, Hefei (China); Hefei Center for Physical Science and Technology, Hefei (China); Hefei Science Center of CAS, Hefei (China)

2015-04-15

In present research, the sputtering and reflection yield of self-bombardment of tungsten are investigated with the aid of molecular dynamics simulations. The source of sputtered and reflected atoms is detected by traced the original locations of sputtered and reflected atoms. Results show that for the reflected atoms no specific region exists which means cluster atoms are randomly reflected. But almost all of sputtered atoms are from a conical region under the landing point of cluster. So we can determine the sputtering yield by study the dimension of the sputtering region. Molecular dynamics shows the depth and radius of the conical are power functions of impacting energy. The effects of cluster size and temperature of target on sputtering and reflection rate are also preformed in present study. Both sputtering and reflection yield are proportion to cluster size in present cluster size, i.e. 66–2647 atoms. Higher target temperature can increase sputtering yield and deduce sputtering threshold energy, but little effect on reflection rate.

Intrinsic photocatalytic assessment of reactively sputtered TiO₂ films.

Science.gov (United States)

Rafieian, Damon; Driessen, Rick T; Ogieglo, Wojciech; Lammertink, Rob G H

2015-04-29

Thin TiO2 films were prepared by DC magnetron reactive sputtering at different oxygen partial pressures. Depending on the oxygen partial pressure during sputtering, a transition from metallic Ti to TiO2 was identified by spectroscopic ellipsometry. The crystalline nature of the film developed during a subsequent annealing step, resulting in thin anatase TiO2 layers, displaying photocatalytic activity. The intrinsic photocatalytic activity of the catalysts was evaluated for the degradation of methylene blue (MB) using a microfluidic reactor. A numerical model was employed to extract the intrinsic reaction rate constants. High conversion rates (90% degradation within 20 s residence time) were observed within these microreactors because of the efficient mass transport and light distribution. To evaluate the intrinsic reaction kinetics, we argue that mass transport has to be accounted for. The obtained surface reaction rate constants demonstrate very high reactivity for the sputtered TiO2 films. Only for the thinnest film, 9 nm, slightly lower kinetics were observed.

Deposition of indium tin oxide films on acrylic substrates by radiofrequency magnetron sputtering

International Nuclear Information System (INIS)

Chiou, B.S.; Hsieh, S.T.; Wu, W.F.

1994-01-01

Indium tin oxide (ITO) films were deposited onto acrylic substrates by rf magnetron sputtering. Low substrate temperature (< 80 C) and low rf power (< 28 W) were maintained during sputtering to prevent acrylic substrate deformation. The influence of sputtering parameters, such as rf power, target-to-substrate distance, and chamber pressure, on the film deposition rate, the electrical properties, as well as the optical properties of the deposited films was investigated. Both the refractive index and the extinction coefficient were derived. The high reflection at wavelengths greater than 3 μm made these sputtered ITO films applicable to infrared mirrors

Data compilation of angular distributions of sputtered atoms

International Nuclear Information System (INIS)

Yamamura, Yasunori; Takiguchi, Takashi; Tawara, Hiro.

1990-01-01

Sputtering on a surface is generally caused by the collision cascade developed near the surface. The process is in principle the same as that causing radiation damage in the bulk of solids. Sputtering has long been regarded as an undesirable dirty effect which destroys the cathodes and grids in gas discharge tubes or ion sources and contaminates plasma and the surrounding walls. However, sputtering is used today for many applications such as sputter ion sources, mass spectrometers and the deposition of thin films. Plasma contamination and the surface erosion of first walls due to sputtering are still the major problems in fusion research. The angular distribution of the particles sputtered from solid surfaces can possibly provide the detailed information on the collision cascade in the interior of targets. This report presents a compilation of the angular distribution of sputtered atoms at normal incidence and oblique incidence in the various combinations of incident ions and target atoms. The angular distribution of sputtered atoms from monatomic solids at normal incidence and oblique incidence, and the compilation of the data on the angular distribution of sputtered atoms are reported. (K.I.)

Dwell time dependent morphological transition and sputtering yield of ion sputtered Sn

International Nuclear Information System (INIS)

Qian, H X; Zeng, X R; Zhou, W

2010-01-01

Self-organized nano-scale patterns may appear on a wide variety of materials irradiated with an ion beam. Good manipulation of these structures is important for application in nanostructure fabrication. In this paper, dwell time has been demonstrated to be able to control the ripple formation and sputtering yield on Sn surface. Ripples with a wavelength of 1.7 μm were observed for a dwell time in the range 3-20 μs, whereas much finer ripples with a wavelength of 540 nm and a different orientation were observed for a shorter dwell time in the range 0.1-2 μs. The sputtering yield increases with dwell time significantly. The results provide a new basis for further steps in the theoretical description of morphology evolution during ion beam sputtering.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

Science.gov (United States)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Sputtering effect of low-energy ions on biological target: The analysis of sputtering product of urea and capsaicin

International Nuclear Information System (INIS)

Zhang, Lili; Xu, Xue; Wu, Yuejin

2013-01-01

Sputtering is a process whereby atoms are ejected from a solid target material due to bombardment of the target by energetic particles. Recent years, ion implantation was successfully applied to biological research based on the fragments sputtering and form open paths in cell structure caused by ion sputtering. In this study, we focused on urea and chilli pepper pericarp samples implanted with N + and Ar + ions. To investigate the sputtering effect, we designed a collecting unit containing a disk sample and a glass pipe. The urea content and capsaicin content recovered from glass pipes were adopted to represent the sputtering product. The result of urea showed that the sputtering effect is positively correlated with the ion energy and dose, also affected by the ion type. The result of capsaicin was different from that of urea at 20 keV and possibly due to biological complex composition and structure. Therefore the sputtering yield depended on both the parameters of incident ions and the state of target materials. The sputtering yield of urea was also simulated by computational method achieved through the TRIM program. The trajectories of primary and recoiled atoms were calculated on the basis of the binary collision approximation using Monte Carlo method. The experimental results were much higher than the calculated results. The possible explanation is that in the physical model the target were assumed as a disordered lattice and independent atoms, which is much less complicated than that of the biological models

Fusion reactor high vacuum pumping

International Nuclear Information System (INIS)

Sedgley, D.W.; Walthers, C.R.; Jenkins, E.M.

1992-01-01

This paper reports on recent experiments which have shown the practicality of using activated carbon (coconut charcoal) at 4K to pump helium and hydrogen isotopes for a fusion reactor. Both speed and capacity for deuterium/helium and tritium/helium-3 mixtures were satisfactory. The long-term effects of tritium on the charcoal/cement system developed by Grumman and LLNL was now known; therefore a program was undertaken to see what, if any, effect long-term tritium exposure has on the cryosorber. Several charcoal on aluminum test samples were subjected to six months exposure of tritium at approximately 77 K. The tritium was scanned several times with a residual gas analyzer and the speed-capacity performance of the samples was measured before, approximately one-third way through, and after the exposure. Modest effects were noted which would not seriously restrict the use of charcoal as a cryosorber for fusion reactor high-vacuum pumping applications

Contribution to the study of sputtering and damage of uranium dioxide by fast heavy ions; Contribution a l'etude de la pulverisation et de l'endommagement du dioxyde d'uranium par les ions lourds rapides

Energy Technology Data Exchange (ETDEWEB)

Schlutig, S

2001-03-01

Swift heavy ion-solid interaction leads in volume to track creation and on the surface to the ejection of particles into the vacuum. To learn more about initial mechanisms of track formation, we are focused on the sputtering of uranium dioxide by fast heavy ions. This present study is exclusively devoted to the influence of the electronic stopping power on the emission of neutral particles and especially on their angular distribution. These measurements are completed by those of the ions emitted from UO{sub 2} targets bombarded with swift heavy ions. The whole experimental results give access to: i) the nature of the sputtered particles; ii) the charge state of the emitted particles; iii) the direction of ejection of the sputtered particles ; iv) the sputtering yields deduced from the angular distributions. These results are compared to the prediction of the sputtering models proposed in the literature and it seems that the supersonic gas flow model is well suited to describe our results. Finally, the sputtering yields are compared with a set of earlier experimental data on uranium dioxide damage obtained by T. Wiss and we observe that only a small fraction of UO{sub 2} monolayers are sputtered. (author)

Study of a pressure measurement method using laser ionization for extremely-high vacuum

International Nuclear Information System (INIS)

Kokubun, Kiyohide

1991-01-01

A method of measuring pressures in the range of extremely-high vacuum (XHV) using the laser ionization has been studied. For this purpose, nonresonant multiphoton ionization of various kinds of gases has been studied, and highly-sensitive ion-detection systems and an extremely-high vacuum equipment were fabricated. These results are presented in detail. Two ion-detection systems were fabricated and tested: the one is based on the pulse-counting method, and the other utilizes the image-processing technique. The former is superior in detecting a few ions or less. The latter was processing technique. The former is superior in detecting a few ions or less. The latter was verified to able to count accurately the number of ions in the range of a few to several hundreds. To obtain the information on residual gases and test our pressure measurement system, an extremely-high vacuum system was fabricated in our own fashion, attained a pressure lower than 1 x 10 -10 Pa, measured with an extractor gauge. The outgassing rate of this vacuum vessel was measured to be 7.8 x 10 -11 Pa·m 3 /s·m 2 . The surface structures and the surface compositions of the raw material, the machined material, and the machined-and-outgased material were studied by SEM and AES. Besides, the pumping characteristics and the residual gases of the XHV system were investigated in detail at each pumping stage. On the course of these studies, the method of pressure measurement using the laser-ionization has been verified to be very effective for measuring pressures in XHV. (J.P.N.)

TiOx deposited by magnetron sputtering: a joint modelling and experimental study

Science.gov (United States)

Tonneau, R.; Moskovkin, P.; Pflug, A.; Lucas, S.

2018-05-01

This paper presents a 3D multiscale simulation approach to model magnetron reactive sputter deposition of TiOx⩽2 at various O2 inlets and its validation against experimental results. The simulation first involves the transport of sputtered material in a vacuum chamber by means of a three-dimensional direct simulation Monte Carlo (DSMC) technique. Second, the film growth at different positions on a 3D substrate is simulated using a kinetic Monte Carlo (kMC) method. When simulating the transport of species in the chamber, wall chemistry reactions are taken into account in order to get the proper content of the reactive species in the volume. Angular and energy distributions of particles are extracted from DSMC and used for film growth modelling by kMC. Along with the simulation, experimental deposition of TiOx coatings on silicon samples placed at different positions on a curved sample holder was performed. The experimental results are in agreement with the simulated ones. For a given coater, the plasma phase hysteresis behaviour, film composition and film morphology are predicted. The used methodology can be applied to any coater and any films. This paves the way to the elaboration of a virtual coater allowing a user to predict composition and morphology of films deposited in silico.

Epitaxial ZnO gate dielectrics deposited by RF sputter for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors

Science.gov (United States)

Yoon, Seonno; Lee, Seungmin; Kim, Hyun-Seop; Cha, Ho-Young; Lee, Hi-Deok; Oh, Jungwoo

2018-01-01

Radio frequency (RF)-sputtered ZnO gate dielectrics for AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) were investigated with varying O2/Ar ratios. The ZnO deposited with a low oxygen content of 4.5% showed a high dielectric constant and low interface trap density due to the compensation of oxygen vacancies during the sputtering process. The good capacitance-voltage characteristics of ZnO-on-AlGaN/GaN capacitors resulted from the high crystallinity of oxide at the interface, as investigated by x-ray diffraction and high-resolution transmission electron microscopy. The MOS-HEMTs demonstrated comparable output electrical characteristics with conventional Ni/Au HEMTs but a lower gate leakage current. At a gate voltage of -20 V, the typical gate leakage current for a MOS-HEMT with a gate length of 6 μm and width of 100 μm was found to be as low as 8.2 × 10-7 mA mm-1, which was three orders lower than that of the Ni/Au Schottky gate HEMT. The reduction of the gate leakage current improved the on/off current ratio by three orders of magnitude. These results indicate that RF-sputtered ZnO with a low O2/Ar ratio is a good gate dielectric for high-performance AlGaN/GaN MOS-HEMTs.

Magnetron sputtering system with an annual discharge zone and two cathode modules

International Nuclear Information System (INIS)

Savich, V. A.; Yasyunas, A. A.; Kovrigo, V. M.; Kotov, D. A.; Shiripov, V. Ya.

2013-01-01

In this article, general discharge characteristics of a cylindrical magnetron sputtering system with an annual sputtering zone and a high target usage coefficient designed for transparent conducting coatings are shown. Two coupled DC-cathodes are used to improve coating uniformity. Radial sputtered material fluxes are being created. The engineered magnetic system is extremely balanced (G-factor is much higher than 2) and thus provides maximal effective operating power higher than 6 kW. The effectiveness of a magnetic trap results in a fast work cycle (less than 1.5 min) and a high target material usage coefficient (higher than 40%). A multipole magnetic field with null magnetic flux density zones lower target’s surface is being created. There is an influence between cathode modules despite mutual magnetic isolation, so magnetic conductors-shunts are used to weaken it. The magnetron can be used to sputter both metals and conducting ceramics (including ITO). (authors)

Computer simulation of sputtering: A review

International Nuclear Information System (INIS)

Robinson, M.T.; Hou, M.

1992-08-01

In 1986, H. H. Andersen reviewed attempts to understand sputtering by computer simulation and identified several areas where further research was needed: potential energy functions for molecular dynamics (MD) modelling; the role of inelastic effects on sputtering, especially near the target surface; the modelling of surface binding in models based on the binary collision approximation (BCA); aspects of cluster emission in MD models; and angular distributions of sputtered particles. To these may be added kinetic energy distributions of sputtered particles and the relationships between MD and BCA models, as well as the development of intermediate models. Many of these topics are discussed. Recent advances in BCA modelling include the explicit evaluation of the time in strict BCA codes and the development of intermediate codes able to simulate certain many-particle problems realistically. Developments in MD modelling include the wide-spread use of many-body potentials in sputtering calculations, inclusion of realistic electron excitation and electron-phonon interactions, and several studies of cluster ion impacts on solid surfaces

Sputtering on cobalt with noble gas ions

International Nuclear Information System (INIS)

Sarholt-Kristensen, L.; Johansen, A.; Johnson, E.

1983-01-01

Single crystals of cobalt have been bombarded with 80 keV Ar + ions and with 80 keV and 200 keV Xe + ions in the [0001] direction of the hcp phase and the [111] direction of the fcc phase. The sputtering yield has been measured as function of target temperature (20 0 C-500 0 C), showing a reduction in sputtering yield for 80 keV Ar + ions and 200 keV Xe + ions, when the crystal structure changes from hcp to fcc. In contrast to this, bombardment with 80 keV Xe + ions results in an increase in sputtering yield as the phase transition is passed. Sputtering yields for [111] nickel are in agreement with the sputtering yields for fcc cobalt indicating normal behaviour of the fcc cobalt phase. The higher sputtering yield of [0001] cobalt for certain combinations of ion mass and energy may then be ascribed to disorder induced partly by martensitic phase transformation, partly by radiation damage. (orig.)

Gases and vacua handbook of vacuum physics

CERN Document Server

Beck, A H

2013-01-01

Handbook of Vacuum Physics, Volume 1: Gases and Vacua provides information on the many aspects of vacuum technology, from material on the quantum theoretical aspects of the complex semi-conductors used for thermionic and photo-electric emission to data on the performance of commercially available pumps, gauges, and high-vacuum materials. The handbook satisfies the need of workers using vacuum apparatuses or works on the diverse applications of high-vacuum technology in research and industry. The book is a compilation of long articles prepared by experts in vacuum technology. Sufficient theoret

Process stabilization by peak current regulation in reactive high-power impulse magnetron sputtering of hafnium nitride

International Nuclear Information System (INIS)

Shimizu, T; Villamayor, M; Helmersson, U; Lundin, D

2016-01-01

A simple and cost effective approach to stabilize the sputtering process in the transition zone during reactive high-power impulse magnetron sputtering (HiPIMS) is proposed. The method is based on real-time monitoring and control of the discharge current waveforms. To stabilize the process conditions at a given set point, a feedback control system was implemented that automatically regulates the pulse frequency, and thereby the average sputtering power, to maintain a constant maximum discharge current. In the present study, the variation of the pulse current waveforms over a wide range of reactive gas flows and pulse frequencies during a reactive HiPIMS process of Hf-N in an Ar–N 2 atmosphere illustrates that the discharge current waveform is a an excellent indicator of the process conditions. Activating the reactive HiPIMS peak current regulation, stable process conditions were maintained when varying the N 2 flow from 2.1 to 3.5 sccm by an automatic adjustment of the pulse frequency from 600 Hz to 1150 Hz and consequently an increase of the average power from 110 to 270 W. Hf–N films deposited using peak current regulation exhibited a stable stoichiometry, a nearly constant power-normalized deposition rate, and a polycrystalline cubic phase Hf-N with (1 1 1)-preferred orientation over the entire reactive gas flow range investigated. The physical reasons for the change in the current pulse waveform for different process conditions are discussed in some detail. (paper)

Very Low-Cost, Rugged, High-Vacuum System for Mass Spectrometers, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — NASA, the DoD, DHS, and commercial industry have a pressing need for miniaturized, rugged, low-cost, high vacuum systems. Recent advances in sensor technology at...

Electrical resistivity of sputtered molybdenum films

International Nuclear Information System (INIS)

Nagano, J.

1980-01-01

The electrical resistivity of r.f. sputtered molybdenum films of thickness 5-150 nm deposited on oxidized silicon substrates was resolved into the three electron scattering components: isotropic background scattering, scattering at grain boundaries and scattering at surfaces. It was concluded that the isotropic background scattering is almost equal to that of bulk molybdenum and is not influenced by sputtering and annealing conditions. When the film thickness is sufficient that surface scattering can be ignored, the decrease in film resistivity after annealing is caused by the decrease in scattering at the grain boundaries for zero bias sputtered films, and is caused by an increase of the grain diameter for r.f. bias sputtered films. (Auth.)

Recent progress in thin film processing by magnetron sputtering with plasma diagnostics

International Nuclear Information System (INIS)

Han, Jeon G

2009-01-01

The precise control of the structure and related properties becomes crucial for sophisticated applications of thin films deposited by magnetron sputtering in emerging industries including the flat panel display, digital electronics and nano- and bio-industries. The film structure is closely related to the total energy delivered to the substrate surface for nucleation and growth during all kinds of thin film processes, including magnetron sputtering. Therefore, the energy delivered to the surface for nucleation and growth during magnetron sputtering should be measured and analysed by integrated diagnostics of the plasma parameters which are closely associated with the process parameters and other external process conditions. This paper reviews the background of thin film nucleation and growth, the status of magnetron sputtering technology and the progress of plasma diagnostics for plasma processing. The evolution of the microstructure during magnetron sputtering is then discussed with respect to the change in the process variables in terms of the plasma parameters along with empirical data of the integrated plasma diagnostics for various magnetron sputtering conditions with conventional dc, pulsed dc and high power pulsed dc sputtering modes. Among the major energy terms to be discussed are the temperature change in the top surface region and the energies of ions and neutral species. (topical review)

Changes in CR-39 proton sensitivity due to prolonged exposure to high vacuums relevant to the National Ignition Facility and OMEGA.

Science.gov (United States)

Manuel, M J-E; Rosenberg, M J; Sinenian, N; Rinderknecht, H; Zylstra, A B; Séguin, F H; Frenje, J; Li, C K; Petrasso, R D

2011-09-01

When used at facilities like OMEGA and the NIF, CR-39 is exposed to high vacuum environments before and after irradiation by charged particles and neutrons. Using an electrostatic linear accelerator at MIT, studies have been conducted to investigate the effects of high vacuum exposure on the sensitivity of CR-39 to fusion protons in the ~1-9 MeV energy range. High vacuum conditions, of order 10(-5) Torr, experienced by CR-39 samples at these facilities were emulated. It is shown that vacuum exposure times longer than ~16 h before proton irradiation result in a decrease in proton sensitivity, whereas no effect was observed for up to 67 h of vacuum exposure after proton irradiation. CR-39 sensitivity curves are presented for samples with prolonged exposure to high vacuum before and after proton irradiation. © 2011 American Institute of Physics

HIGH-TEMPERATURE VACUUM CEMENTATION – THE RESERVE TO REDUCE THE ENERGY INTENSITY OF MANUFACTURE AND IMPROVE THE QUALITY OF TRANSMISSIONS GEARWHEELS OF HIGH-ENERGY MACHINES

OpenAIRE

A. A. Shipko; S. P. Rudenko; A. L. Valko; A. N. Chichin

2016-01-01

Results of research of influence of high-temperature vacuum chemical heat treatment on the amount of grain structural steels are presented. The efficiency of hereditary fine-grained steel for high temperature vacuum carburizing are shown.

Effect of deposition conditions on mechanical stresses and microstructure of sputter-deposited molybdenum and reactively sputter-deposited molybdenum nitride films

International Nuclear Information System (INIS)

Shen, Y.G.

2003-01-01

A combined investigation of mechanical stress generation by in situ substrate curvature measurements during the growth of MoN x thin films, with 0≤x≤0.35, and of structural properties by ex situ X-ray diffraction (XRD), transmission electron microscopy (TEM), transmission electron diffraction (TED), X-ray photoelectron spectroscopy (XPS), and electron energy-loss spectroscopy (EELS) is reported. It was found that the Mo film stresses strongly depended on the Ar sputtering pressure and changed from highly compressive to highly tensile in a relatively narrow pressure range of 6-12 mTorr. For pressures exceeding ∼40 mTorr, the stress in the film was nearly zero. Cross-sectional TEM measurements indicated that the compressively stressed films contained a dense microstructure without any columns, while the films having tensile stress had a very columnar microstructure. High sputtering-gas pressure conditions yielded dendritic-like film growth, resulting in complete relaxation of the mechanical tensile stresses. It was also found that the properties of the deposited MoN x films depended not only on the nitrogen partial pressure in Ar-N 2 gas mixtures but also on the total sputtering-gas pressure. Cross-sectional TEM studies showed that an average column width for 160 nm-thick films near stoichiometry of Mo 2 N was about ∼15-20 nm. Using the electron scattering data collected from a range of crystalline samples for calculating the pair distribution function (PDF) by Fourier transformation in real space, Mo-N and Mo-Mo bonding in the films was also identified. Once the Mo 2 N phase was formed, the density, microstructure and bonding feature were similar and insensitive to the total sputtering pressure used in this study

Change of wettability of PTFE surface by sputter etching and excimer laser. Sputter etching oyobi excimer laser ni yoru PTFE hyomen no shinsuika

Energy Technology Data Exchange (ETDEWEB)

Yamamoto, S. (Nitto Denko Corp., Osaka (Japan)); Kubo, U. (Kinki University, Osaka (Japan))

1994-06-20

The wettability of PTFE (polytetrafluoroethylene) surfaces was improved by sputter etching and excimer laser irradiation. In sputter etching, the PTFE surface was treated by reactive sputter etching with H2O gas to give active groups on the surface. In laser irradiation, the surface was irradiated in pure water by high-energy KrF excimer laser. As the surface wettability was evaluated with a contact angle to water, the contact angle decreased remarkably in both treatments resulting in a good improvement effect. In sputter etching, various new chemical bonds such as F-C=O, F2C-FC-O, F2C-C-O and C-O were observed because of a decrease in F and incorporation of oxygen. Such chemical bonds could be eliminated by ultraviolet ray irradiation, and the treated surface condition approached the initial condition after irradiation of 200 hours. In laser irradiation, it was suggested that C-F bonds were broken, and OH groups were added to the surface by dissociation of H2O to H and OH. 7 refs., 8 figs., 1 tab.

Quantitative evaluation of sputtering induced surface roughness and its influence on AES depth profiles of polycrystalline Ni/Cu multilayer thin films

Energy Technology Data Exchange (ETDEWEB)

Yan, X.L.; Coetsee, E. [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Wang, J.Y., E-mail: wangjy@stu.edu.cn [Department of Physics, Shantou University, 243 Daxue Road, Shantou, 515063, Guangdong (China); Swart, H.C., E-mail: swartHC@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa); Terblans, J.J., E-mail: terblansjj@ufs.ac.za [Department of Physics, University of the Free State, P O Box 339, Bloemfontein, ZA9300 (South Africa)

2017-07-31

Highlights: • Linear Least Square (LLS) method used to separate Ni and Cu Auger spectra. • The depth-dependent ion sputtering induced roughness was quantitatively evaluated. • The depth resolution better when profiling with dual-ion beam vs. a single-ion beam. • AES depth profiling with a lower ion energy results in a better depth resolution. - Abstract: The polycrystalline Ni/Cu multilayer thin films consisting of 8 alternating layers of Ni and Cu were deposited on a SiO{sub 2} substrate by means of electron beam evaporation in a high vacuum. Concentration-depth profiles of the as-deposited multilayered Ni/Cu thin films were determined with Auger electron spectroscopy (AES) in combination with Ar{sup +} ion sputtering, under various bombardment conditions with the samples been stationary as well as rotating in some cases. The Mixing-Roughness-Information depth (MRI) model used for the fittings of the concentration-depth profiles accounts for the interface broadening of the experimental depth profiling. The interface broadening incorporates the effects of atomic mixing, surface roughness and information depth of the Auger electrons. The roughness values extracted from the MRI model fitting of the depth profiling data agrees well with those measured by atomic force microscopy (AFM). The ion sputtering induced surface roughness during the depth profiling was accordingly quantitatively evaluated from the fitted MRI parameters with sample rotation and stationary conditions. The depth resolutions of the AES depth profiles were derived directly from the values determined by the fitting parameters in the MRI model.

Highly -oriented growth of polycrystalline silicon films on glass by pulsed magnetron sputtering

International Nuclear Information System (INIS)

Reinig, P.; Selle, B.; Fenske, F.; Fuhs, W.; Alex, V.; Birkholz, M.

2002-01-01

Nominally undoped polycrystalline silicon (poly-Si) thin films were deposited on glass at 450 deg. C at high deposition rate (>100 nm/min) by pulsed dc magnetron sputtering. The pulse frequency was found to have a significant influence on the preferred grain orientation. The x-ray diffraction pattern exhibits a strong enhancement of the (400) reflex with increasing pulse frequency. The quantitative evaluation reveals that over 90% of the grains are oriented. The observed change in preferred grain orientation in poly-Si films at low temperatures is associated with concurrent ion bombardment of the growing film

Investigation of Non-Vacuum Deposition Techniques in Fabrication of Chalcogenide-Based Solar Cell Absorbers

KAUST Repository

Alsaggaf, Ahmed

2015-07-01

The environmental challenges are increasing, and so is the need for renewable energy. For photovoltaic applications, thin film Cu(In,Ga)(S,Se)2 (CIGS) and CuIn(S,Se)2 (CIS) solar cells are attractive with conversion efficiencies of more than 20%. However, the high-efficiency cells are fabricated using vacuum technologies such as sputtering or thermal co-evaporation, which are very costly and unfeasible at industrial level. The fabrication involves the uses of highly toxic gases such as H2Se, adding complexity to the fabrication process. The work described here focused on non-vacuum deposition methods such as printing. Special attention has been given to printing designed in a moving Roll-to-Roll (R2R) fashion. The results show potential of such technology to replace the vacuum processes. Conversion efficiencies for such non-vacuum deposition of Cu(In,Ga)(S,Se)2 solar cells have exceeded 15% using hazardous chemicals such as hydrazine, which is unsuitable for industrial scale up. In an effort to simplify the process, non-toxic suspensions of Cu(In,Ga)S2 molecular-based precursors achieved efficiencies of ~7-15%. Attempts to further simplify the selenization step, deposition of CuIn(S,Se)2 particulate solutions without the Ga doping and non-toxic suspensions of Cu(In,Ga)Se2 quaternary precursors achieved efficiencies (~1-8%). The contribution of this research was to provide a new method to monitor printed structures through spectral-domain optical coherence tomography SD-OCT in a moving fashion simulating R2R process design at speeds up to 1.05 m/min. The research clarified morphological and compositional impacts of Nd:YAG laser heat-treatment on Cu(In,Ga)Se2 absorber layer to simplify the annealing step in non-vacuum environment compatible to R2R. Finally, the research further simplified development methods for CIGS solar cells based on suspensions of quaternary Cu(In,Ga)Se2 precursors and ternary CuInS2 precursors. The methods consisted of post deposition reactive

Time-resolved investigation of dual high power impulse magnetron sputtering with closed magnetic field during deposition of Ti-Cu thin films

International Nuclear Information System (INIS)

Stranak, Vitezslav; Hippler, Rainer; Cada, Martin; Hubicka, Zdenek; Tichy, Milan

2010-01-01

Time-resolved comparative study of dual magnetron sputtering (dual-MS) and dual high power impulse magnetron sputtering (dual-HiPIMS) systems arranged with closed magnetic field is presented. The dual-MS system was operated with a repetition frequency 4.65 kHz (duty cycle ≅50%). The frequency during dual-HiPIMS is lower as well as its duty cycle (f=100 Hz, duty 1%). Different metallic targets (Ti, Cu) and different cathode voltages were applied to get required stoichiometry of Ti-Cu thin films. The plasma parameters of the interspace between magnetrons in the substrate position were investigated by time-resolved optical emission spectroscopy, Langmuir probe technique, and measurement of ion fluxes to the substrate. It is shown that plasma density as well as ion flux is higher about two orders of magnitude in dual-HiPIMS system. This fact is partially caused by low diffusion of ionized sputtered particles (Ti + ,Cu + ) which creates a preionized medium.

Cyclic crack resistance of magnesium alloys in vacuum, humid an highly desiccated air

International Nuclear Information System (INIS)

Yarema, S.Ya.; Zinyuk, O.D.

1986-01-01

Investigation results on cyclic crack resistance of four structural magnesium alloys in vacuum, humid and highly desiccated air are presented. The regularities obtained are discussed at the background of the known data, using the data on crack closing and hydrogen concenration near its vertex. Diagrams of fatigue fracture of magnesium alloys MA2-1, MA15, MA8 and MA18, produced in vacuum, dry and humid air, on the whole obey the previously established regularities for aluminium alloys and steels. The diagrams of fatigue fracture plotted taking into account crack closing (v-ΔK eff ) for dry and humid air are quite similar. An increase in cyclic crack resistance of the materials in vacuum can not be explained by the change in the crack closing and is evidently conditioned by the absence of hydrogen absorption as the main factor accelerating the crack growth. Effect of vacuum on the threshold K th increases with the increase in σ 0.2 , which testifies to a strong effect of medium on the rate of fatigue crack growth in near the threshold region

Physical sputtering of metallic systems by charged-particle impact

International Nuclear Information System (INIS)

Lam, N.Q.

1989-12-01

The present paper provides a brief overview of our current understanding of physical sputtering by charged-particle impact, with the emphasis on sputtering of metals and alloys under bombardment with particles that produce knock-on collisions. Fundamental aspects of ion-solid interactions, and recent developments in the study of sputtering of elemental targets and preferential sputtering in multicomponent materials are reviewed. We concentrate only on a few specific topics of sputter emission, including the various properties of the sputtered flux and depth of origin, and on connections between sputtering and other radiation-induced and -enhanced phenomena that modify the near-surface composition of the target. The synergistic effects of these diverse processes in changing the composition of the integrated sputtered-atom flux is described in simple physical terms, using selected examples of recent important progress. 325 refs., 27 figs

Microstructure, Residual Stress, Corrosion and Wear Resistance of Vacuum Annealed TiCN/TiN/Ti Films Deposited on AZ31

Directory of Open Access Journals (Sweden)

Haitao Li

2016-12-01

Full Text Available Composite titanium carbonitride (TiCN thin films deposited on AZ31 by DC/RF magnetron sputtering were vacuum annealed at different temperatures. Vacuum annealing yields the following on the structure and properties of the films: the grain grows and the roughness increases with an increase of annealing temperature, the structure changes from polycrystalline to single crystal, and the distribution of each element becomes more uniform. The residual stress effectively decreases compared to the as-deposited film, and their corrosion resistance is much improved owing to the change of structure and fusion of surface defects, whereas the wear-resistance is degraded due to the grain growth and the increase of surface roughness under a certain temperature.

The Use of OXYGEN-18 in the Development of Methods for Controlled Sputter Deposition of High Critical Transition Temperature Material Thin Films of Predicted Composition and Good Uniformity

Science.gov (United States)

Tidrow, Steven Clay

Two primary concerns, in the sputter deposition of high T_{c} material films, are the prevention of oxygen deficiency in the films and the elimination of the negative ion effect. "Oxygen deficiency" occurs when the amount of oxygen incorporated into the film is less than the amount of oxygen required to form the superconducting material lattice. Oxygen deficiency is due to the volatile nature of oxygen. The negative ion effect occurs when an atom or molecule (typically oxygen) gains an extra electron, is accelerated away from the target and impinges upon a film being grown directly in front of the sputtering target. The impinging particle has enough energy to cause resputtering of the deposited film. The presence of Sr and to a greater extent Ba, may enhance the negative ion effect in these materials. However, it is oxygen which readily forms negative ions that is primarily responsible for the negative ion effect. Thus, oxygen must be given special attention in the sputter deposition of high T_{c} material films. A specially designed sputtering system is used to demonstrate that the negative ion effect can be reduced such that large uniform high T_{c} material films possessing predicted and repeated composition can be grown in an on-axis arrangement. Utilizing this same sputtering system and the volatile nature of oxygen, it is demonstrated that oxygen processes occurring in the chamber during growth of high T_ {c} material films can be investigated using the tracer ^{18}O. In particular, it is shown that ^{18}O can be utilized as a tool for (1) investigating the negative ion effect, (2) investigating oxygen incorporation into high T_{c} material films, (3) investigating oxygen incorporation into the target, (4) tailoring films for oxygen migration and interface investigations and (5) tailoring films for the other specific oxygen investigations. Such sputtering systems that utilize the tracer ^{18}O are necessary for systematic growth of high T_ {c} material films

Sputtered carbon as a corrosion barrier for x-ray detector windows

Energy Technology Data Exchange (ETDEWEB)

Rowley, Joseph; Pei, Lei; Davis, Robert C., E-mail: davis@byu.edu; Vanfleet, Richard R. [Department of Physics and Astronomy, Brigham Young University, Provo, Utah 84602 (United States); Liddiard, Steven; Harker, Mallorie; Abbott, Jonathan [Moxtek, Inc., 452 W 1260 N, Orem, Utah 84057 (United States)

2016-09-15

Sputtered amorphous carbon thin films were explored as corrosion resistant coatings on aluminum thin films to be incorporated into x-ray detector windows. The requirements for this application include high corrosion resistance, low intrinsic stress, high strains at failure, and high x-ray transmission. Low temperature sputtering was used because of its compatibility with the rest of the window fabrication process. Corrosion resistance was tested by exposure of carbon coated and uncoated Al thin films to humidity. Substrate curvature and bulge testing measurements were used to determine intrinsic stress and ultimate strain at failure. The composition and bonding of the carbon films were further characterized by electron energy loss spectroscopy, Raman spectroscopy, and carbon, hydrogen, and nitrogen elemental analyses. Samples had low compressive stress (down to.08 GPa), a high strain at failure (3%), and a low fraction of sp{sup 3} carbon–carbon bonds (less than 5%). The high breaking strain and excellent x-ray transmission of these sputtered carbon films indicate that they will work well as corrosion barriers in this application.

High vacuum general purpose scattering chamber for nuclear reaction study

International Nuclear Information System (INIS)

Suresh Kumar; Ojha, S.C.

2003-01-01

To study the nuclear reactions induced by beam from medium energy accelerators, one of the most common facility required is a scattering chamber. In the scattering chamber, projectile collides with the target nucleus and the scattered reaction products are detected with various type of nuclear detector at different angles with respect to the beam. The experiments are performed under high vacuum to minimize the background reaction and the energy losses of the charged particles. To make the chamber general purpose various requirement of the experiments are incorporated into it. Changing of targets, changing angle of various detectors while in vacuum are the most desired features. The other features like ascertaining the beam spot size and position on the target, minimizing the background counts by proper beam dump, accurate positioning of the detector as per plan etc. are some of the important requirements

Microstructural variation in titanium oxide thin films deposited by DC magnetron sputtering

International Nuclear Information System (INIS)

Pandian, Ramanathaswamy; Natarajan, Gomathi; Kamruddin, M.; Tyagi, A.K.

2013-01-01

We report on the microstructural evolution of titanium oxide thin films deposited by reactive DC magnetron sputtering using titanium metal target. By varying the ratio of sputter-gas mixture containing argon, oxygen and nitrogen various phases of titanium oxide, almost pure rutile, rutile-rich and anatase-rich nano-crystalline, were deposited on Si substrates at room temperature. Using high-resolution scanning electron microscopy, X-ray diffraction and micro-Raman techniques the microstructure of the films were revealed. The relationship between the microstructure of the films and the oxygen partial pressure during sputtering is discussed

HIGH-TEMPERATURE VACUUM CEMENTATION – THE RESERVE TO REDUCE THE ENERGY INTENSITY OF MANUFACTURE AND IMPROVE THE QUALITY OF TRANSMISSIONS GEARWHEELS OF HIGH-ENERGY MACHINES

Directory of Open Access Journals (Sweden)

A. A. Shipko

2016-01-01

Full Text Available Results of research of influence of high-temperature vacuum chemical heat treatment on the amount of grain structural steels are presented. The efficiency of hereditary fine-grained steel for high temperature vacuum carburizing are shown.

Advanced light source vacuum policy and vacuum guidelines for beamlines and experiment endstations

International Nuclear Information System (INIS)

Hussain, Z.

1995-08-01

The purpose of this document is to: (1) Explain the ALS vacuum policy and specifications for beamlines and experiment endstations. (2) Provide guidelines related to ALS vacuum policy to assist in designing beamlines which are in accordance with ALS vacuum policy. This document supersedes LSBL-116. The Advanced Light Source is a third generation synchrotron radiation source whose beam lifetime depends on the quality of the vacuum in the storage ring and the connecting beamlines. The storage ring and most of the beamlines share a common vacuum and are operated under ultra-high-vacuum (UHV) conditions. All endstations and beamline equipment must be operated so as to avoid contamination of beamline components, and must include proper safeguards to protect the storage ring vacuum from an accidental break in the beamline or endstation vacuum systems. The primary gas load during operation is due to thermal desorption and electron/photon induced desorption of contaminants from the interior of the vacuum vessel and its components. The desorption rates are considerably higher for hydrocarbon contamination, thus considerable emphasis is placed on eliminating these sources of contaminants. All vacuum components in a beamline and endstation must meet the ALS vacuum specifications. The vacuum design of both beamlines and endstations must be approved by the ALS Beamline Review Committee (BRC) before vacuum connections to the storage ring are made. The vacuum design is first checked during the Beamline Design Review (BDR) held before construction of the beamline equipment begins. Any deviation from the ALS vacuum specifications must be approved by the BRC prior to installation of the equipment on the ALS floor. Any modification that is incorporated into a vacuum assembly without the written approval of the BRC is done at the user's risk and may lead to rejection of the whole assembly

Report on opportunities and/or techniques for high-caliber experimental research (other) proposals for SSPEX

International Nuclear Information System (INIS)

Nuth, J.A. III; Corso, G.; Devincenzi, D.; Duba, A.; Freeman, J.; Lopez, R.; Stephens, J.; Strong, I.; Wolfe, J.; Lawrence Livermore National Lab., CA; Rice Univ., Houston, TX; Jet Propulsion Lab., Pasadena, CA; Los Alamos National Lab., NM)

1986-01-01

Brief discriptions of the following 13 experiments are included: ultrahigh vacuum petrology facility; artificial comet free flyer; artificial comet (tethered); cosmic dust detector; cosmic dust collector; dust collection using tethered satellites; artificial magnetosphere; microgravity petrological studies; slitless ultraviolet spectrometer; orbital determination and capture experiment (ODACE); high velocity sputtering of amorphous silicates; particle release experiments; and calibration of gamma and X-ray remote sensing probes

Development of high resolution vacuum ultraviolet beam line at Indus-1 synchrotron source

International Nuclear Information System (INIS)

Shukla, R.P.; Das, N.C.; Udupa, D.V.; Saraswathy, P.; Sunanda, K.; Jha, S.N.; Shastri, Aparna; Singh, Paramjeet; Mallick, Manika; Mishra, A.P.; Sahoo, N.K.; Sinha, A.K.; Bhatt, S.; Sahni, V.C.

2005-07-01

High resolution vacuum ultraviolet beamline at Indus-1 450 MeV synchrotron source has been developed for carrying out absorption spectral studies of atoms and molecules. The beamline consists of three major parts i.e. a focusing optical system, an absorption cell and a high resolution 6.65 m vacuum ultraviolet spectrometer in Eagle mount. The wavelength range of the spectrometer is from 700 A to 2000 A and the resolution of the spectrometer is 0.01 A. Using the synchrotron source Indus-1, the absorption spectra of oxygen, ammonia and carbon disulphide have been recorded at the wavelength band of 1750 A, 1881 A and 3100 A respectively. Details of different aspects of design and development of the high resolution VUV beamline are described in this report. (author)

Sputtering properties of tungsten 'fuzzy' surfaces

International Nuclear Information System (INIS)

Nishijima, D.; Baldwin, M.J.; Doerner, R.P.; Yu, J.H.

2011-01-01

Sputtering yields of He-induced W 'fuzzy' surfaces bombarded by Ar have been measured in the linear divertor plasma simulator PISCES-B. It is found that the sputtering yield of a fuzzy surface, Y fuzzy , decreases with increasing fuzzy layer thickness, L, and saturates at ∼10% of that of a smooth surface, Y smooth , at L > 1 μm. The reduction in the sputtering yield is suspected to be due mainly to the porous structure of fuzz, since the ratio, Y fuzzy /Y smooth follows (1 - p fuzz ), where p fuzz is the fuzz porosity. Further, Y fuzzy /Y smooth is observed to increase with incident ion energy, E i . This may be explained by an energy dependent change in the angular distribution of sputtered W atoms, since at lower E i , the angular distribution is observed to become more butterfly-shaped. That is, a larger fraction of sputtered W atoms can line-of-sight deposit/stick onto neighboring fuzz nanostructures for lower E i butterfly distributions, resulting in lower ratio of Y fuzzy /Y smooth .

Polarity inversion of AlN film grown on nitrided a-plane sapphire substrate with pulsed DC reactive sputtering

Directory of Open Access Journals (Sweden)

Marsetio Noorprajuda

2018-04-01

Full Text Available The effect of oxygen partial pressure (PO2 on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (−c-polarity to aluminum (+c-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002 and (10−12 X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.

Niobium-based catalysts prepared by reactive radio-frequency magnetron sputtering and arc plasma methods as non-noble metal cathode catalysts for polymer electrolyte fuel cells

International Nuclear Information System (INIS)

Ohnishi, Ryohji; Katayama, Masao; Takanabe, Kazuhiro; Kubota, Jun; Domen, Kazunari

2010-01-01

Two vacuum methods, reactive radio-frequency (RF) magnetron sputtering and arc plasma deposition, were used to prepare niobium-based catalysts for an oxygen reduction reaction (ORR) as non-noble metal cathodes for polymer electrode fuel cells (PEFCs). Thin films with various N and O contents, denoted as NbO x and Nb-O-N, were prepared on glassy carbon plates by RF magnetron sputtering with controlled partial pressures of oxygen and nitrogen. Electrochemical measurements indicated that the introduction of the nitrogen species into the thin film resulted in improved ORR activity compared to the oxide-only film. Using an arc plasma method, niobium was deposited on highly oriented pyrolytic graphite (HOPG) substrates, and the sub-nanoscale surface morphology of the deposited particles was investigated using scanning tunneling microscopy (STM). To prepare practical cathode catalysts, niobium was deposited on carbon black (CB) powders by arc plasma method. STM and transmission electron microscopy observations of samples on HOPG and CB indicated that the prepared catalysts were highly dispersed at the atomic level. The onset potential of oxygen reduction on Nb-O-N/CB was 0.86 V vs. a reversible hydrogen electrode, and the apparent current density was drastically improved by the introduction of nitrogen.

The design of high vacuum system for baby electron beam machine (baby ebm): a comparison between theoretical and experimental

International Nuclear Information System (INIS)

Mohd Rizal Mamat; Rosli Darmawan; Lee Chee Huei; Mohd Rizal Md Chulan; Leo Kwee Wah; Muhamad Zahidee Taat; Fadzlie Nordin; Abu Bakar Mhd Ghazali

2005-01-01

Baby ebm which was developed to study the engineering and physics of electrons requires the use of high vacuum system in order to prevent electron loss and ionization of air molecules. In selecting the high vacuum system for baby ebm two main factors were considered: the ultimate pressure and the pump down time. The ultimate pressure required for the operation of the baby ebm is in 10-7 torr range. The pump down time was estimated from calculations, taking into account the vacuum pump and chamber size. The turbomolecular pump system (tmp), which is capable of achieving the required vacuum level was selected as the high vacuum system and installed to baby ebm. The tmp is currently fully operational. It was found that the vacuum pumping performance of the tmp differs considerably from what the calculations indicate. Compared to the calculations, it takes a much longer time to achieve the required operating pressure of baby ebm. This could be due to the fact that the formula used for the calculations was a very simplified formula that takes into account the main factors only which are the vacuum pump and chamber size. This paper attempts to present the comparison of the tmp performance between the theoretical and experimental. (Author)

Structure and soft magnetic properties of sputter deposited MnZn-ferrite films

NARCIS (Netherlands)

Gillies, M.F.; Coehoorn, R.; van Zon, J.B.A.D.; Alders, D.

1998-01-01

In this paper we report the soft magnetic properties of thin films of sputtered MnZn ferrite deposited on thermally oxidized Si substrates. A high deposition temperature, 600¿°C, together with the addition of water vapor to the sputtering gas was found to improve the initial ac permeability, µ. The

Sputter deposited gallium doped ZnO for TCO applications

Energy Technology Data Exchange (ETDEWEB)

Dietrich, Marc; Kronenberger, Achim; Polity, Angelika; Meyer, Bruno [I. Physikalisches Institut, Justus Liebig Universitaet Giessen (Germany); Blaesing, Juergen; Krost, Alois [FNW/IEP/AHE, Otto-von-Guericke Universitaet Magdeburg (Germany)

2010-07-01

Transparent conducting oxides to be used for flat panel or display applications should exhibit low electrical resistivity in line with a high optical transmission in the visible spectral range. Today indium-tin-oxide is the material which meets these requirements best. However, the limited availability of indium makes it useful to search for alternatives and ZnO doped with group III elements are promising candidates. While the Al doping in high concentrations causes problems due to the formation of insulating Al-oxides, Gallium related oxides are typically n-type conducting wide band gap semiconductors. Therefore we deposited Gallium doped ZnO thin films on quartz and sapphire substrates by radio frequency magnetron sputtering with a ZnO/Ga{sub 2}O{sub 3}(3at%) composite target. The substrate temperature and the oxygen flow during the sputtering process were varied to optimise the layer properties. Introducing oxygen to the sputtering gas allowed to vary the resistivity of the films by three orders of magnitude from about 1 {omega}cm down to less than 1 m{omega}cm.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum.

Science.gov (United States)

Seifert, Marietta; Rane, Gayatri K; Kirbus, Benjamin; Menzel, Siegfried B; Gemming, Thomas

2015-12-19

Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 ) substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Surface Effects and Challenges for Application of Piezoelectric Langasite Substrates in Surface Acoustic Wave Devices Caused by High Temperature Annealing under High Vacuum

Directory of Open Access Journals (Sweden)

Marietta Seifert

2015-12-01

Full Text Available Substrate materials that are high-temperature stable are essential for sensor devices which are applied at high temperatures. Although langasite is suggested as such a material, severe O and Ga diffusion into an O-affine deposited film was observed during annealing at high temperatures under vacuum conditions, leading to a damage of the metallization as well as a change of the properties of the substrate and finally to a failure of the device. Therefore, annealing of bare LGS (La 3 Ga 5 SiO 14 substrates at 800 ∘ C under high vacuum conditions is performed to analyze whether this pretreatment improves the suitability and stability of this material for high temperature applications in vacuum. To reveal the influence of the pretreatment on the subsequently deposited metallization, RuAl thin films are used as they are known to oxidize on LGS at high temperatures. A local study of the pretreated and metallized substrates using transmission electron microscopy reveals strong modification of the substrate surface. Micro cracks are visible. The composition of the substrate is strongly altered at those regions. Severe challenges for the application of LGS substrates under high-temperature vacuum conditions arise from these substrate damages, revealing that the pretreatment does not improve the applicability.

Plasma Sputtering Robotic Device for In-Situ Thick Coatings of Long, Small Diameter Vacuum Tubes

Science.gov (United States)

Hershcovitch, Ady

2014-10-01

A novel robotic plasma magnetron mole with a 50 cm long cathode was designed fabricated & operated. Reason for this endeavor is to alleviate the problems of unacceptable ohmic heating of stainless steel vacuum tubes and of electron clouds, due to high secondary electron yield (SEY), in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase cathode lifetime, movable magnet package was developed, and thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced SEY to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that 10 μm Cu coated stainless steel RHIC tube has conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. Device detail and experimental results will be presented. Work supported by Brookhaven Science Associates, LLC under

Cooling the Motion of Diamond Nanocrystals in a Magneto-Gravitational Trap in High Vacuum.

Science.gov (United States)

Hsu, Jen-Feng; Ji, Peng; Lewandowski, Charles W; D'Urso, Brian

2016-07-22

Levitated diamond nanocrystals with nitrogen-vacancy (NV) centres in high vacuum have been proposed as a unique system for experiments in fundamental quantum mechanics, including the generation of large quantum superposition states and tests of quantum gravity. This system promises extreme isolation from its environment while providing quantum control and sensing through the NV centre spin. While optical trapping has been the most explored method of levitation, recent results indicate that excessive optical heating of the nanodiamonds under vacuum may make the method impractical with currently available materials. Here, we study an alternative magneto-gravitational trap for diamagnetic particles, such as diamond nanocrystals, with stable levitation from atmospheric pressure to high vacuum. Magnetic field gradients from permanent magnets confine the particle in two dimensions, while confinement in the third dimension is gravitational. We demonstrate that feedback cooling of the centre-of-mass motion of a trapped nanodiamond cluster results in cooling of one degree of freedom to less than 1 K.

High vacuum tip-enhanced Raman spectroscope based on a scanning tunneling microscope.

Science.gov (United States)

Fang, Yurui; Zhang, Zhenglong; Sun, Mengtao

2016-03-01

In this paper, we present the construction of a high-vacuum tip-enhanced Raman spectroscopy (HV-TERS) system that allows in situ sample preparation and measurement. A detailed description of the prototype instrument is presented with experimental validation of its use and novel ex situ experimental results using the HV-TERS system. The HV-TERS system includes three chambers held under a 10(-7) Pa vacuum. The three chambers are an analysis chamber, a sample preparation chamber, and a fast loading chamber. The analysis chamber is the core chamber and contains a scanning tunneling microscope (STM) and a Raman detector coupled with a 50 × 0.5 numerical aperture objective. The sample preparation chamber is used to produce single-crystalline metal and sub-monolayer molecular films by molecular beam epitaxy. The fast loading chamber allows ex situ preparation of samples for HV-TERS analysis. Atomic resolution can be achieved by the STM on highly ordered pyrolytic graphite. We demonstrate the measurement of localized temperature using the Stokes and anti-Stokes TERS signals from a monolayer of 1,2-benzenedithiol on a gold film using a gold tip. Additionally, plasmonic catalysis can be monitored label-free at the nanoscale using our device. Moreover, the HV-TERS experiments show simultaneously activated infrared and Raman vibrational modes, Fermi resonance, and some other non-linear effects that are not observed in atmospheric TERS experiments. The high spatial and spectral resolution and pure environment of high vacuum are beneficial for basic surface studies.

High vacuum tip-enhanced Raman spectroscope based on a scanning tunneling microscope

Energy Technology Data Exchange (ETDEWEB)

Fang, Yurui [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603-146, Beijing 100190 (China); Bionanophotonics, Department of Applied Physics, Chalmers University of Technology, Göteborg, SE 41296 (Sweden); Zhang, Zhenglong [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603-146, Beijing 100190 (China); School of Physics and Information Technology, Shaanxi Normal University, 710062 Xi’an (China); Leibniz Institute of Photonic Technology, Albert-Einstein-Str. 9, 07745 Jena (Germany); Sun, Mengtao, E-mail: mtsun@iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603-146, Beijing 100190 (China)

2016-03-15

In this paper, we present the construction of a high-vacuum tip-enhanced Raman spectroscopy (HV-TERS) system that allows in situ sample preparation and measurement. A detailed description of the prototype instrument is presented with experimental validation of its use and novel ex situ experimental results using the HV-TERS system. The HV-TERS system includes three chambers held under a 10{sup −7} Pa vacuum. The three chambers are an analysis chamber, a sample preparation chamber, and a fast loading chamber. The analysis chamber is the core chamber and contains a scanning tunneling microscope (STM) and a Raman detector coupled with a 50 × 0.5 numerical aperture objective. The sample preparation chamber is used to produce single-crystalline metal and sub-monolayer molecular films by molecular beam epitaxy. The fast loading chamber allows ex situ preparation of samples for HV-TERS analysis. Atomic resolution can be achieved by the STM on highly ordered pyrolytic graphite. We demonstrate the measurement of localized temperature using the Stokes and anti-Stokes TERS signals from a monolayer of 1,2-benzenedithiol on a gold film using a gold tip. Additionally, plasmonic catalysis can be monitored label-free at the nanoscale using our device. Moreover, the HV-TERS experiments show simultaneously activated infrared and Raman vibrational modes, Fermi resonance, and some other non-linear effects that are not observed in atmospheric TERS experiments. The high spatial and spectral resolution and pure environment of high vacuum are beneficial for basic surface studies.

Particle-balance models for pulsed sputtering magnetrons

Science.gov (United States)

Huo, Chunqing; Lundin, D.; Gudmundsson, J. T.; Raadu, M. A.; Bradley, J. W.; Brenning, N.

2017-09-01

The time-dependent plasma discharge ionization region model (IRM) has been under continuous development during the past decade and used in several studies of the ionization region of high-power impulse magnetron sputtering (HiPIMS) discharges. In the present work, a complete description of the most recent version of the IRM is given, which includes improvements, such as allowing for returning of the working gas atoms from the target, a separate treatment of hot secondary electrons, addition of doubly charged metal ions, etc. To show the general applicability of the IRM, two different HiPIMS discharges are investigated. The first set concerns 400 μs long discharge pulses applied to an Al target in an Ar atmosphere at 1.8 Pa. The second set focuses on 100 μs long discharge pulses applied to a Ti target in an Ar atmosphere at 0.54 Pa, and explores the effects of varying the magnetic field strength. The model results show that Al2+ -ions contribute negligibly to the production of secondary electrons, while Ti2+ -ions effectively contribute to the production of secondary electrons. Similarly, the model results show that for an argon discharge with Al target the contribution of Al+-ions to the discharge current at the target surface is over 90% at 800 V. However, at 400 V the Al+-ions and Ar+-ions contribute roughly equally to the discharge current in the initial peak, while in the plateau region Ar+-ions contribute to roughly \\frac{2}{3} of the current. For high currents the discharge with Al target develops almost pure self-sputter recycling, while the discharge with Ti target exhibits close to a 50/50 combination of self-sputter recycling and working gas-recycling. For a Ti target, a self-sputter yield significantly below unity makes working gas-recycling necessary at high currents. For the discharge with Ti target, a decrease in the B-field strength, resulted in a corresponding stepwise increase in the discharge resistivity.

Preparation and characterization of thick metastable sputter deposits

International Nuclear Information System (INIS)

Allen, R.P.; Dahlgren, S.D.; Merz, M.D.

1975-01-01

High-rate dc supported-discharge sputtering techniques were developed and used to prepare 0.1 mm to 5.0 mm-thick deposits of a variety of metastable materials including amorphous alloys representing more than 15 different rare-earth-transition metal systems and a wide range of compositions and deposition conditions. The ability to prepare thick, homogeneous deposits has made it possible for the first time to investigate the structure, properties, and annealing behavior of these unique sputtered alloys using neutron diffraction, ultrasonic, and other experimental techniques that are difficult or impractical for thin films. More importantly, these characterization studies show that the structure and properties of the massive sputter deposits are independent of thickness and can be reproduced from deposit to deposit. Other advantages and applications of this metastable materials preparation technique include the possibility of varying structure and properties by control of the deposition parameters and the ability to deposit even reactive alloys with a very low impurity content

Arc generation from sputtering plasma-dielectric inclusion interactions

CERN Document Server

Wickersham, C E J; Fan, J S

2002-01-01

Arcing during sputter deposition and etching is a significant cause of particle defect generation during device fabrication. In this article we report on the effect of aluminum oxide inclusion size, shape, and orientation on the propensity for arcing during sputtering of aluminum targets. The size, shape, and orientation of a dielectric inclusion plays a major role in determining the propensity for arcing and macroparticle emission. In previous studies we found that there is a critical inclusion size required for arcing to occur. In this article we used high-speed videos, electric arc detection, and measurements of particle defect density on wafers to study the effect of Al sub 2 O sub 3 inclusion size, shape, and orientation on arc rate, intensity, and silicon wafer particle defect density. We found that the cross-sectional area of the inclusion exposed to the sputtering plasma is the critical parameter that determines the arc rate and rate of macroparticle emission. Analysis of the arc rate, particle defect...

Depth of origin of atoms sputtered from crystalline targets

International Nuclear Information System (INIS)

Shapiro, M.H.; Trovato, E.; Tombrello, T.A.

2001-01-01

Recently, V.I. Shulga and W. Eckstein (Nucl. Instr. and Meth. B 145 (1998) 492) investigated the depth of origin of atoms sputtered from random elemental targets using the Monte Carlo code TRIM.SP and the lattice code OKSANA. They found that the mean depth of origin is proportional to N -0.86 , where N is the atomic density; and that the most probable escape depth is ∼λ 0 /2, where λ 0 is the mean atomic distance. Since earlier molecular dynamics simulations with small crystalline elemental targets typically produced a most probable escape depth of zero (i.e., most sputtered atoms came from the topmost layer of the target), we have carried out new molecular dynamics simulations of sputtered atom escape depths with much larger crystalline targets. Our new results, which include the bcc targets Cs, Rb and W, as well as the fcc targets Cu and Au predict that the majority of sputtered atoms come from the first atomic layer for the bcc(1 0 0), bcc(1 1 1), fcc(1 0 0) and fcc(1 1 1) targets studied. For the high-atomic density targets Cu, Au and W, the mean depth of origin of sputtered atoms typically is less than 0.25λ 0 . For the low-atomic density targets Cs and Rb, the mean depth of origin of sputtered atoms is considerably larger, and depends strongly on the crystal orientation. We show that the discrepancy between the single-crystal and amorphous target depth of origin values can be resolved by applying a simple correction to the single-crystal results

Superconductivity, magnetics, cryogenics, and vacuum coating

International Nuclear Information System (INIS)

Akin, J.E.; Ballou, J.K.; Beaver, R.J.

1975-01-01

The Engineering Sciences Department continued to provide consultation, design, and experiment to support the plasma physics activities of the Division while inaugurating a comprehensive program to develop superconducting magnets for toroidal fusion devices. This newly funded program is aimed at producing toroidal superconducting magnets for an experimental power reactor by the mid 1980's. Other superconducting work, such as the 14-T niobium tin solenoid designed last year for use in Moessbauer experiments, has been fabricated, successfully tested, and delivered to the Physics Division. This coil, which used a 1.27-cm wide Nb 3 Sn conductor operating at 14 T with a coil current density of 11,000 A/cm, represents an advance in the state-of-the-art. The conceptual design was provided for a subcooler to extend the ORMAK operating temperature to 70 0 K and thus allow operation at fields up to 25 kG with the present generators. The detailed design, fabrication, installation supervision, and acceptance testing of the subcooler were provided by the UCCND engineering organization. Further support to the ORMAK program was provided by the vacuum-coating activity through an investigation of sputtering erosion of the ORMAK liner. In addition, a program was undertaken to develop a variety of refractory surfaces of metals, alloys, and intermetallic compounds on stainless steel for use as first walls in future fusion devices. Adherent thick-film metallic and compound coatings deposited in vacuum by several mechanisms were produced and tested. (U.S.)

Baking results of KSTAR vacuum vessel

International Nuclear Information System (INIS)

Kim, S. T.; Kim, Y. J.; Kim, K. M.; Im, D. S.; Joung, N. Y.; Yang, H. L.; Kim, Y. S.; Kwon, M.

2009-01-01

The Korea Superconducting Tokamak Advanced Research (KSTAR) is an advanced superconducting tokamak designed to establish a scientific and technological basis for an attractive fusion reactor. The fusion energy in the tokamak device is released through fusion reactions of light atoms such as deuterium or helium in hot plasma state, of which temperature reaches several hundreds of millions Celsius. The high temperature plasma is created in the vacuum vessel that provides ultra high vacuum status. Accordingly, it is most important for the vacuum condition to keep clean not only inner space but also surface of the vacuum vessel to make high quality plasma. There are two methods planned to clean the wall surface of the KSTAR vacuum vessel. One is surface baking and the other is glow discharge cleaning (GDC). To bake the vacuum vessel, De-Ionized (DI) water is heated to 130 .deg. C and circulated in the passage between double walls of the vacuum vessel (VV) in order to bake the surface. The GDC operation uses hydrogen and inert gas discharges. In this paper, general configuration and brief introduction of the baking result will be reported

Baking results of KSTAR vacuum vessel

Energy Technology Data Exchange (ETDEWEB)

Kim, S. T.; Kim, Y. J.; Kim, K. M.; Im, D. S.; Joung, N. Y.; Yang, H. L.; Kim, Y. S.; Kwon, M. [National Fusion Research Institute, Daejeon (Korea, Republic of)

2009-05-15

The Korea Superconducting Tokamak Advanced Research (KSTAR) is an advanced superconducting tokamak designed to establish a scientific and technological basis for an attractive fusion reactor. The fusion energy in the tokamak device is released through fusion reactions of light atoms such as deuterium or helium in hot plasma state, of which temperature reaches several hundreds of millions Celsius. The high temperature plasma is created in the vacuum vessel that provides ultra high vacuum status. Accordingly, it is most important for the vacuum condition to keep clean not only inner space but also surface of the vacuum vessel to make high quality plasma. There are two methods planned to clean the wall surface of the KSTAR vacuum vessel. One is surface baking and the other is glow discharge cleaning (GDC). To bake the vacuum vessel, De-Ionized (DI) water is heated to 130 .deg. C and circulated in the passage between double walls of the vacuum vessel (VV) in order to bake the surface. The GDC operation uses hydrogen and inert gas discharges. In this paper, general configuration and brief introduction of the baking result will be reported.

Silicon oxynitride films deposited by reactive high power impulse magnetron sputtering using nitrous oxide as a single-source precursor

Energy Technology Data Exchange (ETDEWEB)

Hänninen, Tuomas, E-mail: tuoha@ifm.liu.se; Schmidt, Susann; Jensen, Jens; Hultman, Lars; Högberg, Hans [Thin Film Physics Division, Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping SE-581 83 (Sweden)

2015-09-15

Silicon oxynitride thin films were synthesized by reactive high power impulse magnetron sputtering of silicon in argon/nitrous oxide plasmas. Nitrous oxide was employed as a single-source precursor supplying oxygen and nitrogen for the film growth. The films were characterized by elastic recoil detection analysis, x-ray photoelectron spectroscopy, x-ray diffraction, x-ray reflectivity, scanning electron microscopy, and spectroscopic ellipsometry. Results show that the films are silicon rich, amorphous, and exhibit a random chemical bonding structure. The optical properties with the refractive index and the extinction coefficient correlate with the film elemental composition, showing decreasing values with increasing film oxygen and nitrogen content. The total percentage of oxygen and nitrogen in the films is controlled by adjusting the gas flow ratio in the deposition processes. Furthermore, it is shown that the film oxygen-to-nitrogen ratio can be tailored by the high power impulse magnetron sputtering-specific parameters pulse frequency and energy per pulse.

Sputtering calculations with the discrete ordinated method

International Nuclear Information System (INIS)

Hoffman, T.J.; Dodds, H.L. Jr.; Robinson, M.T.; Holmes, D.K.

1977-01-01

The purpose of this work is to investigate the applicability of the discrete ordinates (S/sub N/) method to light ion sputtering problems. In particular, the neutral particle discrete ordinates computer code, ANISN, was used to calculate sputtering yields. No modifications to this code were necessary to treat charged particle transport. However, a cross section processing code was written for the generation of multigroup cross sections; these cross sections include a modification to the total macroscopic cross section to account for electronic interactions and small-scattering-angle elastic interactions. The discrete ordinates approach enables calculation of the sputtering yield as functions of incident energy and angle and of many related quantities such as ion reflection coefficients, angular and energy distributions of sputtering particles, the behavior of beams penetrating thin foils, etc. The results of several sputtering problems as calculated with ANISN are presented

Comparative study of the characteristics of Ni films deposited on SiO2/Si(100) by oblique-angle sputtering and conventional sputtering

International Nuclear Information System (INIS)

Yu Mingpeng; Qiu Hong; Chen Xiaobai; Wu Ping; Tian Yue

2008-01-01

Ni films were deposited on SiO 2 /Si(100) substrates at 300 K and 573 K by oblique-angle sputtering and conventional sputtering. The films deposited at 300 K mainly have a [110] crystalline orientation in the growing direction whereas those deposited at 573 K grow with a [111] crystalline orientation in the growing direction. The film prepared only at 300 K by oblique-angle sputtering grows with a weakly preferential orientation along the incidence direction of the sputtered Ni atoms. All the films grow with thin columnar grains perpendicular to the substrate surface. The grain size of the films sputter-deposited obliquely is larger than that of the films sputter-deposited conventionally. The grain size of the Ni film does not change markedly with the deposition temperature. The film deposited at 573 K by oblique-angle sputtering has the highest saturation magnetization. For the conventional sputtering, the coercivity of the Ni film deposited at 573 K is larger than that of the film deposited at 300 K. However, for the oblique-angle sputtering, the coercivity of the Ni film is independent of the deposition temperature. All the Ni films exhibit an isotropic magnetization characteristic in the film plane

Transport theory of sputtering I: Depth of origin of sputtered atoms

International Nuclear Information System (INIS)

Zhang, Zhu Lin

1999-01-01

Sputter theory employing a sum of two power cross sections has been implemented. Compared with the well known Lindhard power cross section (V∝r -1/m ), a sum of two such cross sections can give a much better approximation to the Born-Mayer scattering in the low energy region (m ∼ 0.1). By using both one and two power cross sections, we have solved the linear transport equations describing the sputtering problem asymptotically. As usual, electronic stopping is ignored in the analysis. It has further been proved that Falcone's theory of the atom ejection process contradicts transport theory. The Andersen-Sigmund relation for partial sputtering yield ratios between two elements in an arbitrary multicomponent target has been derived by both methods. The energy deposited in the target surface layers has been computed for a few typical ion-target combinations. The numerical curves show that both theories generate almost the same results (error m≥0. The former even may be only about one half of the latter as long as m=0

High charge state metal ion production in vacuum arc ion sources

International Nuclear Information System (INIS)

Brown, I.G.; Anders, A.; Anders, S.

1994-01-01

The vacuum arc is a rich source of highly ionized metal plasma that can be used to make a high current metal ion source. Vacuum arc ion sources have been developed for a range of applications including ion implantation for materials surface modification, particle accelerator injection for fundamental nuclear physics research, and other fundamental and applied purposes. Typically the source is repetitively pulsed with pulse length of order a millisecond and duty cycle or order 1% and operation of a dc embodiment has been demonstrated also. Beams have been produced from over 50 of the solid metals of the periodic table, with mean ion energy up to several hundred keV and with peak (pulsed) beam current up to several amperes. The ion charge state distribution has been extensively studied. Ion spectra have been measured for a wide range of metallic cathode materials, including Li, C, Mg, Al, Si, Ca, Sc, Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Ge, Sr, Y, Zr, Nb, Mo, Pd, Ag, Cd, In, Sn, Sb, Ba, La, Ce, Pr, Nd, Sm, Gd, Dy, Ho, Er, Tm, Yb, Hf, Ta, W, Ir, Pt, Au, Pb, Bi, Th and U, as well as compound and alloy cathode materials such as TiC, SiC, UC, PbS, brass, and stainless steel. The ions generated are in general multiply-stripped with a mean charge state of from 1 to 3, depending on the particular metal species, and the charge state distribution can have components from Q = 1+ to 6+. Here the authors review the characteristics of vacuum arc ion sources from the perspective of their high charge state metal ion production

High-surface-quality nanocrystalline InN layers deposited on GaN templates by RF sputtering

Energy Technology Data Exchange (ETDEWEB)

Valdueza-Felip, Sirona; Naranjo, Fernando B.; Gonzalez-Herraez, Miguel [Grupo de Ingenieria Fotonica, Departamento de Electronica, Escuela Politecnica Superior, Universidad de Alcala, Campus Universitario, 28871 Alcala de Henares, Madrid (Spain); Lahourcade, Lise; Monroy, Eva [Equipe mixte CEA-CNRS-UJF, Nanophysique et Semiconducteurs, INAC/SP2M/PSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France); Fernandez, Susana [Departamento de Energias Renovables, Energia Solar Fotovoltaica, Centro de Investigaciones Energeticas, Medioambientales y Tecnologicas (CIEMAT), Avda. Complutense 22, 28040 Madrid (Spain)

2011-01-15

We report a detailed study of the effect of deposition parameters on optical, structural, and morphological properties of InN films grown by reactive radio-frequency (RF) sputtering on GaN-on-sapphire templates in a pure nitrogen atmosphere. Deposition parameters under study are substrate temperature, RF power, and sputtering pressure. Wurtzite crystallographic structure with c-axis preferred growth orientation is confirmed by X-ray diffraction measurements. For the optimized deposition conditions, namely at a substrate temperature of 450 C and RF power of 30 W, InN films present a root-mean-square surface roughness as low as {proportional_to}0.4 nm, comparable to the underlying substrate. The apparent optical bandgap is estimated at 720 nm (1.7 eV) in all cases. However, the InN absorption band tail is strongly influenced by the sputtering pressure due to a change in the species of the plasma. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Uniform elemental analysis of materials by sputtering and photoionization mass spectrometry

International Nuclear Information System (INIS)

Chun, He; Basler, J.N.; Becker, C.H.

1997-01-01

Analysis of the elemental composition of surfaces commonly involves techniques in which atoms or ions are ablated from the material's surface and detected by mass spectrometry. Secondary-ion mass spectrometry is widely used for detection with high sensitivity (down to a few parts per billion) but technical problems prevent it from being truly quantitative. Some of these problems are circumvented by nonresonant laser post-ionization of sputtered atoms followed by time-of-flight mass spectrometry (surface analysis by laser ionization: SALI). But when there are large differences in ionization probabilities amongst different elements in the material, the detection sensitivity can be non-uniform and accurate quantification remains out of reach. Here we report that highly uniform, quantitative and sensitive analysis of materials can be achieved using a high-energy (5-keV) ion beam for sputtering coupled with a very-high-intensity laser to induce multiphoton ionization of the sputtered atoms. We show uniform elemental sensitivity for several samples containing elements with very different ionization potentials, suggesting that this approach can now be regarded as quantitative for essentially any material. (author)

Sputtering induced surface composition changes in copper-palladium alloys

International Nuclear Information System (INIS)

Sundararaman, M.; Sharma, S.K.; Kumar, L.; Krishnan, R.

1981-01-01

It has been observed that, in general, surface composition is different from bulk composition in multicomponent materials as a result of ion beam sputtering. This compositional difference arises from factors like preferential sputtering, radiation induced concentration gradients and the knock-in effect. In the present work, changes in the surface composition of copper-palladium alloys, brought about by argon ion sputtering, have been studied using Auger electron spectroscopy. Argon ion energy has been varied from 500 eV to 5 keV. Enrichment of palladium has been observed in the sputter-altered layer. The palladium enrichment at the surface has been found to be higher for 500 eV argon ion sputtering compared with argon ion sputtering at higher energies. Above 500 eV, the surface composition has been observed to remain the same irrespective of the sputter ion energy for each alloy composition. The bulk composition ratio of palladium to copper has been found to be linearly related to the sputter altered surface composition ratio of palladium to copper. These results are discussed on the basis of recent theories of alloy sputtering. (orig.)

Structure, properties and applications of TiN coatings produced by sputter ion plating

International Nuclear Information System (INIS)

Rickerby, D.S.

1988-01-01

The potential beneficial effects that wear-resistant coatings have on engineering surfaces depends upon their ability to remain adherent with the treated component. This paper concentrates on the process of sputter ion plating, a simple dc glow discharge sputtering system operating in soft vacuum, and relates the properties of titanium nitride coatings to the degree of ion polishing (substrate bias) which is utilised during deposition. Substrate bias was identified as the most important system parameter since it allowed for some stress relaxation within the coating via its influence on porosity levels in the coating microstructure. The influence that this has on coating adhesion is discussed. The internal stress is a combination of intrinsic growth stresses and thermal mismatch stresses with the latter tending to dominate as substrate bias is increased. In addition to substrate bias, the role that titanium interlayers and substrate cleaning play in improving the adhesion of titanium nitride coatings is discussed, and the potential benefits highlighted. In the last part of the paper some applications of titanium nitride coating are described -it will be shown that increase in component life is by no means the only criterion which should be considered when judging the success, or otherwise, of a coated component. (author)

Reactive sputtering of TiN films at large substrate to target distances

International Nuclear Information System (INIS)

Musil, J.; Kadlec, S.

1990-01-01

This paper is a critical review of the present status of the magnetron ion sputter plating of thin CiN films. Thus different possibilities of extracting high ion currents 1 s from the magnetron discharge to substrates located not only at standard target to substrate distances d S-T of about 50 mm but also at larger distances d S-T are discussed in detail. Special attention is devoted to magnetron sputtering systems with enhanced ionization, to plasma confinement in the magnetron sputtering systems and to the discharge characteristics of an unbalanced magnetron (UM). It is shown that a UM can be operated in the regime of a double-site-sustained discharge (DSSD) and in this case large 1 s can be extracted to substrates located in large D S-T of about 200 mm and even at high pressures p = 5 Pa. A physical comparison of the conventional magnetron (CM), UM and DSSD is also given. Considerable attention is also devoted to the effect of ion bombardment on properties of TiN films created in the sputtering system using DSSD. (author)

MD simulation of cluster formation during sputtering

International Nuclear Information System (INIS)

Muramoto, T.; Okai, M.; Yamashita, Y.; Yorizane, K.; Yamamura, Y.

2001-01-01

The cluster ejection due to cluster impact on a solid surface is studied through molecular dynamics (MD) simulations. Simulations are performed for Cu cluster impacts on the Cu(1 1 1) surface for cluster energy 100 eV/atom, and for clusters of 6, 13, 28 and 55 atoms. Interatomic interactions are described by the AMLJ-EAM potential. The vibration energy spectrum is independent of the incident cluster size and energy. This comes from the fact that sputtered clusters become stable through the successive fragmentation of nascent large sputtered clusters. The vibration energy spectra for large sputtered clusters have a peak, whose energy corresponds to the melting temperature of Cu. The exponent of the power-law fit of the abundance distribution and the total sputtering yield for the cluster impacts are higher than that for the monatomic ion impacts with the same total energy, where the exponent δ is given by Y n ∝n δ and Y n is the yield of sputtered n-atom cluster. The exponent δ follows a unified function of the total sputtering yield, which is a monotonic increase function, and it is nearly equal to δ ∼ -3 for larger yield

High temperature oxidation resistance of magnetron-sputtered homogeneous CrAlON coatings on 430 steel

Energy Technology Data Exchange (ETDEWEB)

Garratt, E; Wickey, K J; Nandasiri, M I; Moore, A; AlFaify, S; Gao, X [Department of Physics, Western Michigan University, Kalamazoo, MI 49008 (United States); Smith, R J; Buchanan, T L; Priyantha, W; Kopczyk, M; Gannon, P E [Montana State University, Bozeman, MT, 59717 (United States); Kayani, A, E-mail: asghar.kayani@wmich.ed

2009-11-01

The requirements of low cost and high-temperature corrosion resistance for bipolar interconnect plates in solid oxide fuel cell stacks has directed attention to the use of metal plates with oxidation resistant coatings. We have investigated the performance of steel plates with homogenous coatings of CrAlON (oxynitrides). The coatings were deposited using RF magnetron sputtering, with Ar as a sputtering gas. Oxygen in these coatings was not intentionally added. Oxygen might have come through contaminated nitrogen gas bottle, leak in the chamber or from the partial pressure of water vapors. Nitrogen was added during the growth process to get oxynitride coating. The Cr/Al composition ratio in the coatings was varied in a combinatorial approach. The coatings were subsequently annealed in air for up to 25 hours at 800 {sup o}C. The composition of the coated plates and the rate of oxidation were characterized using Rutherford backscattering (RBS) and nuclear reaction analysis (NRA). Surface characterization was carried out using Atomic Force Microscopy (AFM) and surfaces of the coatings were found smooth on submicron scale. From our results, we conclude that Al rich coatings are more susceptible to oxidation than Cr rich coatings.

Experimental and analytical study of the sputtering phenomena

International Nuclear Information System (INIS)

Howard, P.A.

1976-03-01

One form of the sputtering phenomena, the heat-transfer process that occurs when an initially hot vertical surface is cooled by a falling liquid film, was examined from a new experimental approach. The sputtering front is the lowest wetted position on the vertical surface and is characterized by a short region of intense nucleate boiling. The sputtering front progresses downward at nearly a constant rate, the surface below the sputtering front being dry and almost adiabatic. This heat-transfer process is of interest in the analysis of some of the performance aspects of emergency core-cooling systems of light-water reactors. An experimental apparatus was constructed to examine the heat-transfer characteristics of a sputtering front. In the present study, a heat source of sufficient intensity was located immediately below the sputtering front, which prevented its downward progress, thus permitting detailed measurements of steady-state surface temperatures throughout a sputtering front. Experimental evidence showed the sputtering front to correspond to a critical heat-flux (CHF) phenomenon. Data were obtained with water flow rates of 350-1600 lb/sub m//hr-ft and subcoolings of 40-140 0 F on a 3 / 8 -in. solid copper rod at 1 atm. A two-dimensional analytical model was developed to describe a stationary sputtering front where the wet-dry interface corresponds to a CHF phenomena and the dry zone is adiabatic. This model is nonlinear because of the temperature dependence of the heat-transfer coefficient in the wetted region and has yielded good agreement with data. A simplified one-dimensional approximation was developed which adequately describes these data. Finally, by means of a coordinate transformation and additional simplifying assumptions, this analysis was extended to analyze moving sputtering fronts, and reasonably good agreement with reported data was shown

Measurements of beryllium sputtering yields at JET

Science.gov (United States)

Jet-Efda Contributors Stamp, M. F.; Krieger, K.; Brezinsek, S.

2011-08-01

The lifetime of the beryllium first wall in ITER will depend on erosion and redeposition processes. The physical sputtering yields for beryllium (both deuterium on beryllium (Be) and Be on Be) are of crucial importance since they drive the erosion process. Literature values of experimental sputtering yields show an order of magnitude variation so predictive modelling of ITER wall lifetimes has large uncertainty. We have reviewed the old beryllium yield experiments on JET and used current beryllium atomic data to produce revised beryllium sputtering yields. These experimental measurements have been compared with a simple physical sputtering model based on TRIM.SP beryllium yield data. Fair agreement is seen for beryllium yields from a clean beryllium limiter. However the yield on a beryllium divertor tile (with C/Be co-deposits) shows poor agreement at low electron temperatures indicating that the effect of the higher sputtering threshold for beryllium carbide is important.

Versatile sputtering technology for Al2O3 gate insulators on graphene

Directory of Open Access Journals (Sweden)

Miriam Friedemann, Mirosław Woszczyna, André Müller, Stefan Wundrack, Thorsten Dziomba, Thomas Weimann and Franz J Ahlers

2012-01-01

Full Text Available We report a novel, sputtering-based fabrication method of Al2O3 gate insulators on graphene. Electrical performance of dual-gated mono- and bilayer exfoliated graphene devices is presented. Sputtered Al2O3 layers possess comparable quality to oxides obtained by atomic layer deposition with respect to a high relative dielectric constant of about 8, as well as low-hysteresis performance and high breakdown voltage. We observe a moderate carrier mobility of about 1000 cm2 V− 1 s−1 in monolayer graphene and 350 cm2 V− 1 s−1 in bilayer graphene, respectively. The mobility decrease can be attributed to the resonant scattering on atomic-scale defects, likely originating from the Al precursor layer evaporated prior to sputtering.

High power pulsed magnetron sputtering: A method to increase deposition rate

International Nuclear Information System (INIS)

Raman, Priya; McLain, Jake; Ruzic, David N; Shchelkanov, Ivan A.

2015-01-01

High power pulsed magnetron sputtering (HPPMS) is a state-of-the-art physical vapor deposition technique with several industrial applications. One of the main disadvantages of this process is its low deposition rate. In this work, the authors report a new magnetic field configuration, which produces deposition rates twice that of conventional magnetron's dipole magnetic field configuration. Three different magnet pack configurations are discussed in this paper, and an optimized magnet pack configuration for HPPMS that leads to a higher deposition rate and nearly full-face target erosion is presented. The discussed magnetic field produced by a specially designed magnet assembly is of the same size as the conventional magnet assembly and requires no external fields. Comparison of deposition rates with different power supplies and the electron trapping efficiency in complex magnetic field arrangements are discussed

Progress in vacuum metal extraction, refining and consolidation

International Nuclear Information System (INIS)

Sundaram, C.V.; Mukherjee, T.K.; Sharma, B.P.

1973-01-01

The unique achievements in the process metallurgy of rare metals in the past quarter century should largely be attributed to advances in vacuum technology. New standards for high purity, increasing demand for pure metals and alloys for established applications, and steady improvement in sophistication and capacity of vacuum furnaces have provided the stimulus for developing and expanding vacuum metal extraction processes, and also exploring totally new processes. The paper discusses the thermochemistry of vacuum metallurgy, carbothermic and metallothermic reduction reactions, consolidation and refining by vacuum arc melting, electron beam melting and high temperature high vacuum sintering, and ultrapurification, with special reference to the reactive and refractory metals of Group IV to VI. (author)

Angular distribution of sputtered atoms from Al-Sn alloy and surface topography

International Nuclear Information System (INIS)

Wang Zhenxia; Pan Jisheng; Zhang Jiping; Tao Zhenlan

1992-01-01

If an alloy is sputtered the angular distribution of the sputtered atoms can be different for each component. At high ion energies in the range of linear cascade theory, different energy distributions for components of different mass in the solid are predicted. Upon leaving the surface, i.e. overcoming the surface binding energy, these differences should show up in different angular distributions. Differences in the angular distribution are of much practical interest, for example, in thin-film deposition by sputtering and surface analysis by secondary-ion mass spectroscopy and Auger electron spectroscopy. Recently our experimental work has shown that for Fe-W alloy the surface microtopography becomes dominant and determines the shape of the angular distribution of the component. However, with the few experimental results available so far it is too early to draw any general conclusions for the angular distribution of the sputtered constituents. Thus, the aim of this work was to study further the influence of the surface topography on the shape of the angular distribution of sputtered atoms from an Al-Sn alloy. (Author)

Deposition and characterization of sputtered hexaboride coatings

International Nuclear Information System (INIS)

Waldhauser, W.

1996-06-01

Hexaborides of the rare-earth elements ReB 6 are potential materials for cathode applications since they combine properties such as low work function, good electrical conductivity, high melting point as well as low volatility at high temperatures. Due to their high hardness and colorations ranging from blue to purple these compounds are also considered for applications to coatings for decoration of consumer products. At present, either rods of sintered LaB 6 or single LaB 6 crystals are indirectly heated to induce emission. In this workboride coatings were deposited onto various substrates employing non-reactive magnetron sputtering from LaB 6 , CeB 6 , SmB 6 and YB 6 targets. Coatings deposited were examined using scanning electron microscopy, X-ray diffraction, electron probe microanalysis. Vickers microhardness, colorimeter and spectroscopic ellipsometry measurements. Electron emission characteristics of the coatings were studied by the thermionic emission and the contact potential method. After optimization of the sputtering parameters fine-columnar or partially amorphous films with atomic ratios of boron to metal in the order of 5 to 7.5 were obtained. The tendency to form the corresponding hexaboride phase decreases from LaB 6 , CeB 6 and SmB 6 to YB 6 . The work function was measured to be in the range of 2.6 to 3.3 eV. Vickers microhardness values lie between 1500 and 2000 HVO.01. LaB 6 coatings showed the most pronounced visual color impression corresponding to dark violet. The results obtained indicate that sputtered hexaboride films are well suited for decorative and thermionic applications. (author)

Development of a vacuum superinsulation panel

Energy Technology Data Exchange (ETDEWEB)

Timm, H; Seefeldt, D; Nitze, C

1983-05-01

After completion of the investigations the vacuum-insulated panel is available as prototype. The aim of the investigations was to optimize and to finalize the vacuum superinsulation system with regard to a pressure-resistant, temperature-resistant thermal insulation of high efficiency. In this connection, particularly investigations with regard to vacuum-tight sealing, compression and evacuation of powder filling as well as special material investigations were performed. The application-specific utilization of the vacuum-insulated panel and the adjustment to special operational conditions can now be started. Application possibilities are at present seen in coverings or linings with high temperature and/or pressure requirements.

Study of the chemical sputtering in Tore-Supra

International Nuclear Information System (INIS)

Cambe, A.

2002-01-01

The work presented in this thesis focuses on the interactions between energetic particles coming from thermonuclear plasma and the inner components of a fusion machine. This interaction induces two major problems: erosion of the wall, and tritium retention. This report treats the erosion of carbon based materials. The first part is devoted to chemical sputtering, that appears to be the principal erosion mechanism, compared to physical sputtering and radiation enhanced sublimation that both can be limited. Chemical sputtering has been studied in situ in the tokamak Tore-Supra for ohmic and lower hybrid (LH) heated discharges, by means of mass spectrometry and optical spectroscopy. We have shown that it is necessary to take into account both methane and heavier hydrocarbons (C 2 D x and C 3 D y ) in the determination of the chemical sputtering yield. It is found that for the ohmic discharges, the sputtering yield of CD 4 (Y CD4 ) is highly flux (φ) dependent, showing a variation of the form: Y CD4 ∝ φ -0.23 . The experimental study also reveals that an increase of the surface temperature induces an augmentation of Y CD4 . The interpretation and the modelling of the experimental results have been performed with a Monte Carlo code (BBQ. In the second part of this work, we have developed and installed an infrared spectroscopy diagnostic in the 0.8-1.6, μm wavelength range dedicated to the measurement of surface temperature, and the identification of atomic and molecular lines emitted during plasma/wall interactions. In the third part, we present the feasibility study of an in situ tungsten deposition process at low temperature(<80 deg C) in order to suppress the chemical sputtering. This study shows that, with this method call Plasma Assisted Chemical Vapor Deposition (PACVD), we are able to coat the whole inner vessel of a tokamak with 1 μm of tungsten. (author)

Composition, structure and magnetic properties of sputter deposited Ni-Mn-Ga ferromagnetic shape memory thin films

Energy Technology Data Exchange (ETDEWEB)

Annadurai, A.; Nandakumar, A.K.; Jayakumar, S.; Kannan, M.D. [Thin Film Center, Department of Physics, PSG College of Technology, Coimbatore 641004 (India); Manivel Raja, M.; Bysak, S. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India); Gopalan, R. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)], E-mail: rg_gopy@yahoo.com; Chandrasekaran, V. [Defence Metallurgical Research Laboratory, Kanchanbagh, Hyderabad, Andhra Pradesh 500 058 (India)

2009-03-15

Polycrystalline Ni-Mn-Ga thin films were deposited by the d.c. magnetron sputtering on well-cleaned substrates of Si(1 0 0) and glass at a constant sputtering power of 36 W. We report the influence of sputtering pressure on the composition, structure and magnetic properties of the sputtered thin films. These films display ferromagnetic behaviour only after annealing at an elevated temperature and a maximum saturation magnetization of 335 emu/cc was obtained for the films investigated. Evolution of martensitic microstructure was observed in the annealed thin films with the increase of sputtering pressure. The thermo-magnetic curves exhibited only magnetic transition in the temperature range of 339-374 K. The thin film deposited at high sputtering pressure of 0.025 mbar was found to be ordered L2{sub 1} austenitic phase.

Nanomesh of Cu fabricated by combining nanosphere lithography and high power pulsed magnetron sputtering and a preliminary study about its function

Energy Technology Data Exchange (ETDEWEB)

Xie, Wanchuan; Chen, Jiang; Jiang, Lang; Yang, Ping, E-mail: yangping8@263.net; Sun, Hong; Huang, Nan

2013-10-15

The Cu nanomesh was obtained by a combination of nanosphere lithography (NSL) and high power pulsed magnetron sputtering (HiPPMS). A deposition mask was formed on TiO{sub 2} substrates by the self-assembly of polystyrene latex spheres with a diameter of 1 μm, then Cu nanomesh structure was produced on the substrate using sputtering. The structures were investigated by scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX) and X-ray diffraction (XRD). The results show the increase of temperature of the polystyrene mask caused by the thermal radiation from the target and the bombardment of sputtering particles would affect the quality of the final nanopattern. The tests of photocatalytic degradation, platelet adhesion and human umbilical artery smooth muscle cells (HUASMCs) culture show Cu deposition could promote the photocatalytic efficiency of TiO{sub 2}, affect platelet adhesion and inhibit smooth muscle cell adhesion and proliferation. It is highlighted that these findings may serve as a guide for the research of multifunctional surface structure.

Highly flexible indium zinc oxide electrode grown on PET substrate by cost efficient roll-to-roll sputtering process

International Nuclear Information System (INIS)

Park, Yong-Seok; Kim, Han-Ki; Jeong, Soon-Wook; Cho, Woon-Jo

2010-01-01

We have investigated the characteristics of flexible indium zinc oxide (IZO) electrode grown on polyethylene terephthalate (PET) substrates using a specially designed roll-to-roll (RTR) sputtering system for use in flexible optoelectronics. It was found that both electrical and optical properties of the flexible IZO electrode were critically dependent on the DC power and Ar/O 2 flow ratio during the roll-to-roll sputtering process. At optimized conditions (constant working pressure of 3 mTorr, Ar/O 2 flow ratio of Ar at only 30 sccm, DC power 800 W and rolling speed at 0.1 cm/s) the flexible IZO electrode exhibits a sheet resistance of 17.25 Ω/sq and an optical transmittance of 89.45% at 550 nm wavelength. Due to the low PET substrate temperature, which is effectively maintained by cooling drum system, all IZO electrodes showed an amorphous structure regardless of the DC power and Ar/O 2 flow ratio. Furthermore, the IZO electrodes grown at optimized condition exhibited superior flexibility than the conventional amorphous ITO electrodes due to its stable amorphous structure. This indicates that the RTR sputter grown IZO electrode is a promising flexible electrode that can substitute for the conventional ITO electrode, due to its low resistance, high transparency, superior flexibility and fast preparation by the RTR process.

Magnetron sputtered zinc oxide nanorods as thickness-insensitive cathode interlayer for perovskite planar-heterojunction solar cells.

Science.gov (United States)

Liang, Lusheng; Huang, Zhifeng; Cai, Longhua; Chen, Weizhong; Wang, Baozeng; Chen, Kaiwu; Bai, Hua; Tian, Qingyong; Fan, Bin

2014-12-10

Suitable electrode interfacial layers are essential to the high performance of perovskite planar heterojunction solar cells. In this letter, we report magnetron sputtered zinc oxide (ZnO) film as the cathode interlayer for methylammonium lead iodide (CH3NH3PbI3) perovskite solar cell. Scanning electron microscopy and X-ray diffraction analysis demonstrate that the sputtered ZnO films consist of c-axis aligned nanorods. The solar cells based on this ZnO cathode interlayer showed high short circuit current and power conversion efficiency. Besides, the performance of the device is insensitive to the thickness of ZnO cathode interlayer. Considering the high reliability and maturity of sputtering technique both in lab and industry, we believe that the sputtered ZnO films are promising cathode interlayers for perovskite solar cells, especially in large-scale production.

Inductive energy storage using high voltage vacuum circuit breakers

International Nuclear Information System (INIS)

McCann, R.B.; Woodson, H.H.; Mukutmoni, T.

1976-01-01

Controlled thermonuclear fusion experiments currently being planned require large amounts of pulsed energy. Inductive energy storage systems (IES) appear to be attractive for at least two applications in the fusion research program: high beta devices and those employing turbulent heating. The well-known roadblock to successful implementation of IES is the development of a reliable and cost-effective off-switch capable of handling high currents and withstanding high recovery voltages. The University of Texas at Austin has a program to explore the application of conventional vacuum circuit breakers designed for use in AC systems, in conjunction with appropriate counter pulse circuits, as off-switches in inductive energy storage systems. The present paper describes the IES employing vacuum circuit breakers as off-switches. Since the deionization property of these circuit breakers is of great importance to the design and the cost of the counter-pulse circuit, a synthetic test installation to test these breakers has been conceived, designed and is being installed in the Fusion Research Center, University of Texas at Austin. Some design aspects of the facility will be discussed here. Finally, the results of the study on a mathematical model developed and optimized to determine the least cost system which meets both the requirements of an off-switch for IES Systems and the ratings of circuit breakers used in power systems has been discussed. This analysis indicates that the most important factor with respect to the system cost is the derating of the circuit breakers to obtain satisfactory lifetimes

Self-sputtering during ion precipitation and its influence on niobium film properties

International Nuclear Information System (INIS)

Belevskij, V.P.; Gusev, I.V.

1987-01-01

Cathode sputtering of niobium films under conditions of vacuum condensation with simultaneous Nb + ion bombardment at energy of E n =(1.6...6.4)x10 -16 J is studied. Calculation of experimental values of the sputtering coefficient S Nb is performed with respect to the film thickness in the field of action of a niobium ion beam. Using the four-probe method in helium cryostats superconducting properties are studied and the film texture is determined by the X ray diffraction analysis. With the E n growth S Nb increases from 1.1 to 3.1. The best correspondence of the experimental dependence S Nb (E n ) is provided by the semiempirical formula of Yamamura Y. et al. The consequence of the S Nb increase is a sharp decrease of the effective condensation rate v eff . In case of niobium condensation at v eff m , where v m is the velocity of movement of a quasidiffusive boundary of impurities from the substrate according to the model of ion mixing developed by Carter G. and Armour D. suppresion of texture formation and deterioration of superconducting properties of superthin films (about 10 nm) is observed that results from ion mixing of the film and substrate materials on the interface. For such condensation conditions the substrate itself is the main source of impurities in the film

On the dependence of structural and sensing properties of sputtered MoO{sub 3} thin films on argon gas flow

Energy Technology Data Exchange (ETDEWEB)

Khojier, K., E-mail: k_khojier@yahoo.com [Department of Physics, Chalous Branch, Islamic Azad University, Chalous (Iran, Islamic Republic of); Savaloni, H. [Department of Physics, University of Tehran, North Kargar Street, Tehran (Iran, Islamic Republic of); Zolghadr, S. [Department of Physics, Faculty of Science, Central Tehran Branch, Islamic Azad University, Tehran (Iran, Islamic Republic of)

2014-11-30

Highlights: • MoO{sub 3} thin films are sputter coated and their structure are analyzed. • Effect of argon gas flow on the structural and some properties is studied. • CO sensing ability of MoO{sub 3} increases with argon gas flow. • MoO{sub 3} nano-strain decreases with argon gas flow. - Abstract: Nitrogen and carbon oxides (CO, NO and NO{sub 2}), released from combustion facilities and automobiles, are known to be extremely harmful to the human body and also are the main cause of air pollution. Therefore, effective methods to monitor and suppress the carbon and nitrogen oxides have been highly demanded for atmospheric environmental measurements and controls. It is known that molybdenum oxide (MoO{sub 3}) can be a good semiconductor material for use as a gas sensor in monitoring CO, NO and NO{sub 2}. In this paper we report the structural characteristics and sensing properties of the sputtered MoO{sub 3} thin films as a function of argon gas flow. MoO{sub 3} thin films were deposited by DC reactive magnetron sputtering technique on glass substrates at different argon gas flows in the range of 5–20 sccm. X-ray diffraction (XRD) analysis was used for studying crystallographic structure. XRD results showed that all of our films were of polycrystalline structure and of α-MoO{sub 3} stable orthorhombic phase. Results also showed that crystallite size increases while compressive nano-strain in the structure of the films decreases with increasing the argon gas flow. Atomic force microscope and the field emission scanning electron microscope studies showed granular structures for all samples, which increased in size consistent with the XRD results, with argon gas flow, while the surface roughness of the films also increased with argon gas flow. Chemical composition study showed optimum reaction between oxygen and molybdenum atoms for films produced at 15 sccm flow of argon gas. The electrical response of samples was measured in the vacuum and the CO

New perspectives in vacuum high voltage insulation. II. Gas desorption

CERN Document Server

Diamond, W T

1998-01-01

An examination has been made of gas desorption from unbaked electrodes of copper, niobium, aluminum, and titanium subjected to high voltage in vacuum. It has been shown that the gas is composed of water vapor, carbon monoxide, and carbon dioxide, the usual components of vacuum outgassing, plus an increased yield of hydrogen and light hydrocarbons. The gas desorption was driven by anode conditioning as the voltage was increased between the electrodes. The gas is often desorbed as microdischarges-pulses of a few to hundreds of microseconds-and less frequently in a more continuous manner without the obvious pulsed structure characteristic of microdischarge activity. The quantity of gas released was equivalent to many monolayers and consisted mostly of neutral molecules with an ionic component of a few percent. A very significant observation was that the gas desorption was more dependent on the total voltage between the electrodes than on the electric field. It was not triggered by field-emitted electrons but oft...

Introduction to vacuum technology: supplementary study material developed for IVS sponsored vacuum courses

International Nuclear Information System (INIS)

Bhusan, K.G.

2008-01-01

Vacuum technology has advanced to a large extent mainly from the demands of experimental research scientists who have more than ever understood the need for clean very low pressure environments. This need only seems to increase as the lowest pressures achievable in a laboratory setup are dropping down by the decade. What is not usually said is that conventional techniques of producing ultrahigh vacuum have also undergone a metamorphosis in order to cater to the multitude of restrictions in modern day scientific research. This book aims to give that practical approach to vacuum technology. The basics are given in the first chapter with more of a definition oriented approach - which is practically useful. The second chapter deals with the production of vacuum and ultrahigh vacuum with an emphasis on the working principles of several pumps and their working pressure ranges. Measurement of low pressures, both total and partial is presented in the third chapter with a note on leak detection and mass spectrometric techniques. Chapter 4 gives an overview of the materials that are vacuum compatible and their material properties. Chapter 5 gives the necessary methods to be followed for cleaning of vacuum components especially critical if ultrahigh vacuum environment is required. The practical use of a ultrahigh vacuum environment is demonstrated in Chapter 6 for production of high quality thin films through vapour deposition

DC photogun vacuum characterization through photocathode lifetime studies

International Nuclear Information System (INIS)

Marcy Stutzman; Joseph Grames; Matt Poelker; Kenneth Surles-Law; Philip Adderley

2007-01-01

Excellent vacuum is essential for long photocathode lifetimes in DC high voltage photoelectron guns. Vacuum Research at Thomas Jefferson National Accelerator Facility has focused on characterizing the existing vacuum systems at the CEBAF polarized photoinjector and on quantifying improvements for new systems. Vacuum chamber preprocessing, full activation of NEG pumps and NEG coating the chamber walls should improve the vacuum within the electron gun, however, pressure measurement is difficult at pressures approaching the extreme-high-vacuum (XHV) region and extractor gauge readings are not significantly different between the improved and original systems. The ultimate test of vacuum in a DC high voltage photogun is the photocathode lifetime, which is limited by the ionization and back-bombardment of residual gasses. Discussion will include our new load-locked gun design as well as lifetime measurements in both our operational and new photo-guns, and the correlations between measured vacuum and lifetimes will be investigated

Thickness characteristics of YBaCuO system thin films prepared by RF magnetron sputtering

International Nuclear Information System (INIS)