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Sample records for high transmittance sic

  1. Deposition of low stress, high transmittance SiC as an x-ray mask membrane using ECR plasma CVD

    CERN Document Server

    Lee, S Y; Lim, S T; Ahn, J H

    1998-01-01

    SiC for x-ray mask membrane is deposited by Electron Cyclotron Resonance plasma Chemical Vapor Deposition from SiH sub 4 /CH sub 4 Ar mixtures. Stoichiometric SiC is deposited at SiH sub 4 /CH sub 4 ratio of 0.4, deposition temperature of 600.deg.C and microwave power of 500 W with +- 5% thickness uniformity, As-deposited film has compressive residual stress, very smooth surface (31 A rms) and high optical transmittance of 90% at 633 nm wavelength. The microstructure of this film consists of the nanocrystalline particle (100 A approx 200A) embedded in amorphous matrix. Residual stress can be turned to tensile stress via Rapid Thermal Annealing in N sub 2 atmosphere, while suppressing structural change during annealing, As a result, smooth (37 A rms) SiC film with moderate tensile stress and high optical transmittance (85% at 633 nm wavelength) is obtained.

  2. Optical Transmitter Terminal for Selective RF High Frequency Bans Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The objective of the proposal work is to investigate the highly innovative conceptual design of an optical communication selective frequency transmitter terminal...

  3. High energy microlaser and compact MOPA transmitter

    Science.gov (United States)

    Brickeen, Brian K.; Bernot, Dave; Geathers, Eliot; Mosovsky, Joseph

    2011-06-01

    A compact micro-oscillator incorporating a dual-bounce, grazing incidence gain module with a folded resonator cavity is presented. The gain module, previously developed for Nd:YVO4, is embodied in highly doped ceramic Nd:YAG to generate improved Q-switch performance while maintaining localized pump absorption. The cavity design utilizes a doubly folded optics path around the gain crystal to increase the intra-cavity mode for a more optimum overlap with the pump light volume produced by standard lensed laser diode bars. A modified CS-package diode mount is developed to facilitate the reduced size of the oscillator without sacrificing the ability to use a high-energy, side-pumping arrangement. The oscillator is combined with a high gain, high energy extraction VHGM amplifier to generate a transmitter source on the order of 50 mJ. Cooling for both the oscillator and amplifier modules is provided via a conductive path through the base of the package. Both devices are mounted on opposite sides of a phase-change cooling reservoir to enable self-contained, burst-mode operation. Beam shaping of the oscillator output, in preparation for injection into the amplifier, is contained in a small cut-away path on the reservoir side.

  4. Packaging Technology for SiC High Temperature Electronics

    Science.gov (United States)

    Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Meredith, Roger D.; Nakley, Leah M.; Beheim, Glenn M.; Hunter, Gary W.

    2017-01-01

    High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

  5. High Temperature Telemetry Transmitter for Venus Exploration Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed S-band telemetry transmitter will operate in the exterior Venusian corrosive, high pressure, 460oC ambient atmosphere without being contained in a...

  6. High Temperature Telemetry Transmitter for Venus Exploration Project

    Data.gov (United States)

    National Aeronautics and Space Administration — The proposed S-band telemetry transmitter will operate in the exterior Venusian high pressure, 465?aC ambient atmosphere without being contained in a thermally...

  7. High temperature flow behaviour of SiC reinforced lithium ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. The compressive flow behaviour of lithium aluminosilicate (LAS) glass, with and without SiC particulate reinforcements, was studied. The LAS glass crystallized to β spodumene during high-temperature testing. The flow behaviour of LAS glass changed from Newtonian to non-Newtonian due to the presence of.

  8. SiC device development for high temperature sensor applications

    Science.gov (United States)

    Shor, J. S.; Goldstein, David; Kurtz, A. D.; Osgood, R. M.

    1992-01-01

    Progress made in the processing and characterization of 3C-SiC for high temperature sensor applications is reviewed. Piezoresistance properties of silicon carbide and the temperature coefficient of resistivity of n-type beta-SiC are presented. In addition, photoelectrical etching and dopant selective etch-stops in SiC and high temperature Ohmic contacts for n-type beta-SiC sensors are discussed.

  9. Ultra High Temperature (UHT) SiC Fiber (Phase 2)

    Science.gov (United States)

    Dicarlo, James A.; Jacobson, Nathan S.; Lizcano, Maricela; Bhatt, Ramakrishna T.

    2015-01-01

    Silicon-carbide fiber-reinforced silicon-carbide ceramic matrix composites (SiCSiC CMC) are emerginglightweight re-usable structural materials not only for hot section components in gas turbine engines, but also for controlsurfaces and leading edges of reusable hypersonic vehicles as well as for nuclear propulsion and reactor components. Ithas been shown that when these CMC are employed in engine hot-section components, the higher the upper usetemperature (UUT) of the SiC fiber, the more performance benefits are accrued, such as higher operating temperatures,reduced component cooling air, reduced fuel consumption, and reduced emissions. The first generation of SiCSiC CMC with a temperature capability of 2200-2400F are on the verge of being introduced into the hot-section components ofcommercial and military gas turbine engines.Today the SiC fiber type currently recognized as the worlds best in terms ofthermo-mechanical performance is the Sylramic-iBN fiber. This fiber was previously developed by the PI at NASA GRC using patented processes to improve the high-cost commercial Sylramic fiber, which in turn was derived from anotherlow-cost low-performance commercial fiber. Although the Sylramic-iBN fiber shows state-of-the art creep and rupture resistance for use temperatures above 2550oF, NASA has shown by fundamental creep studies and model developmentthat its microstructure and creep resistance could theoretically be significantly improved to produce an Ultra HighTemperature (UHT) SiC fiber.This Phase II Seedling Fund effort has been focused on the key objective of effectively repeating the similar processes used for producing the Sylramic-iBN fiber using a design of experiments approach to first understand the cause of the less than optimum Sylramic-iBN microstructure and then attempting to develop processconditions that eliminate or minimize these key microstructural issues. In so doing, it is predicted that that theseadvanced process could result in an UHT SiC

  10. High-transmittance all-dielectric Huygens' metasurfaces (presentation video)

    Science.gov (United States)

    Staude, Isabelle; Decker, Manuel; Falkner, Matthias; Dominguez, Jason; Neshev, Dragomir N.; Brener, Igal; Pertsch, Thomas; Kivshar, Yuri S.

    2014-09-01

    We demonstrate a metamaterial Huygens' surfaces for near-infrared frequencies using high-permittivity all-dielectric nanoparticles with tailored Mie-type resonances as meta-atoms. We experimentally measure 360 degrees phase variation of the transmitted light in combination with high transmittance values for light passing through a fabricated metasurface exhibiting spectrally overlapping electric and magnetic dipole-type modes in the near-infrared spectral range. Our experimental measurements are in excellent agreement with numerical simulations and analytical calculations. High transmittance in combination with the simultaneously observed complete phase coverage is key for the realization of a wide range of applications including efficient wavefront shaping, dispersion control devices, and holograms.

  11. High power optical transmitter package for free space optical communication

    Science.gov (United States)

    Hildebrand, U.; Menke, B.; Wiesmann, Th.; Ohm, G.

    1990-07-01

    This paper discusses the characteristics of a new concept involving high-power laser diode (HPLD) arrays which are able to emit up to 1000 mW of optical output power but which suffer from poor far-field pattern and poor optical quality, related to the gain guiding mechanism used in such devices. Methods are proposed for improving the optical quality of HPLDs. These include the use of apertured AM scheme for HPLDs and the use of a graded-index lens and a stripe mirror to stabilize the HPLD. A HPLD optical transmitter is designed which will have the capability of operating the HPLD in the 180 deg phase alternating mode under modulation.

  12. Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business of Innovation Research Phase I proposal seeks to investigate and prove the feasibility of developing highly efficient, ultra-lightweight SiC...

  13. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices (Invited)

    Science.gov (United States)

    Neudeck, Philip G.

    1999-01-01

    As illustrated by the invited paper at this conference and other works, SiC wafers and epilayers contain a variety of crystallographic imperfections, including micropipes, closed-core screw dislocations, grain boundaries, basal plane dislocations, heteropolytypic inclusions, and surfaces that are often damaged and contain atomically rough features like step bunching and growth pits or hillocks. Present understanding of the operational impact of various crystal imperfections on SiC electrical devices is reviewed, with an emphasis placed on high-field SiC power devices and circuits.

  14. Promise and Challenges of High-Voltage SiC Bipolar Power Devices

    Directory of Open Access Journals (Sweden)

    Tsunenobu Kimoto

    2016-11-01

    Full Text Available Although various silicon carbide (SiC power devices with very high blocking voltages over 10 kV have been demonstrated, basic issues associated with the device operation are still not well understood. In this paper, the promise and limitations of high-voltage SiC bipolar devices are presented, taking account of the injection-level dependence of carrier lifetimes. It is shown that the major limitation of SiC bipolar devices originates from band-to-band recombination, which becomes significant at a high-injection level. A trial of unipolar/bipolar hybrid operation to reduce power loss is introduced, and an 11 kV SiC hybrid (merged pin-Schottky diodes is experimentally demonstrated. The fabricated diodes with an epitaxial anode exhibit much better forward characteristics than diodes with an implanted anode. The temperature dependence of forward characteristics is discussed.

  15. High temperature flow behaviour of SiC reinforced lithium ...

    Indian Academy of Sciences (India)

    The flow behaviour of LAS glass changed from Newtonian to non-Newtonian due to the presence of crystalline phase. Further, with the addition of 40 vol.% SiC additions, the strain rate sensitivity of flow stress decreased. While the activation energy for flow in LAS was 300 kJ/mole, it increased to 995 kJ/mole with the ...

  16. High efficiency battery converter with SiC devices for residential PV systems

    DEFF Research Database (Denmark)

    Pham, Cam; Teodorescu, Remus; Kerekes, Tamas

    2013-01-01

    The demand for high efficiency and higher power density is a challenge for Si-based semiconductors due to the physical characteristics of material. These can be overcome by employing wide-band-gap materials like SiC. This paper compares a second generator SiC MOSFETs against a normally-on Trench ...... JFETs and theirs performances in a high efficiency battery converter for residential photovoltaic systems. The prototypes are 3 kW converters with more than 98% efficiency and high simplicity and power density....

  17. Advantages and Limits of 4H-SIC Detectors for High- and Low-Flux Radiations

    Science.gov (United States)

    Sciuto, A.; Torrisi, L.; Cannavò, A.; Mazzillo, M.; Calcagno, L.

    2017-11-01

    Silicon carbide (SiC) detectors based on Schottky diodes were used to monitor low and high fluxes of photons and ions. An appropriate choice of the epilayer thickness and geometry of the surface Schottky contact allows the tailoring and optimizing the detector efficiency. SiC detectors with a continuous front electrode were employed to monitor alpha particles in a low-flux regime emitted by a radioactive source with high energy (>5.0 MeV) or generated in an ion implanter with sub-MeV energy. An energy resolution value of 0.5% was measured in the high energy range, while, at energy below 1.0 MeV, the resolution becomes 10%; these values are close to those measured with a traditional silicon detector. The same SiC devices were used in a high-flux regime to monitor high-energy ions, x-rays and electrons of the plasma generated by a high-intensity (1016 W/cm2) pulsed laser. Furthermore, SiC devices with an interdigit Schottky front electrode were proposed and studied to overcome the limits of the such SiC detectors in the detection of low-energy (˜1.0 keV) ions and photons of the plasmas generated by a low-intensity (1010 W/cm2) pulsed laser. SiC detectors are expected to be a powerful tool for the monitoring of radioactive sources and ion beams produced by accelerators, for a complete characterization of radiations emitted from laser-generated plasmas at high and low temperatures, and for dosimetry in a radioprotection field.

  18. Highly flexible and robust N-doped SiC nanoneedle field emitters

    KAUST Repository

    Chen, Shanliang

    2015-01-23

    Flexible field emission (FE) emitters, whose unique advantages are lightweight and conformable, promise to enable a wide range of technologies, such as roll-up flexible FE displays, e-papers and flexible light-emitting diodes. In this work, we demonstrate for the first time highly flexible SiC field emitters with low turn-on fields and excellent emission stabilities. n-Type SiC nanoneedles with ultra-sharp tips and tailored N-doping levels were synthesized via a catalyst-assisted pyrolysis process on carbon fabrics by controlling the gas mixture and cooling rate. The turn-on field, threshold field and current emission fluctuation of SiC nanoneedle emitters with an N-doping level of 7.58 at.% are 1.11 V μm-1, 1.55 V μm-1 and 8.1%, respectively, suggesting the best overall performance for such flexible field emitters. Furthermore, characterization of the FE properties under repeated bending cycles and different bending states reveal that the SiC field emitters are mechanically and electrically robust with unprecedentedly high flexibility and stabilities. These findings underscore the importance of concurrent morphology and composition controls in nanomaterial synthesis and establish SiC nanoneedles as the most promising candidate for flexible FE applications. © 2015 Nature Publishing Group All rights reserved.

  19. High-efficiency resonantly pumped 1550-nm fiber-based laser transmitter Project

    Data.gov (United States)

    National Aeronautics and Space Administration — nLight proposes the development of high efficiency, high average power 1550-nm laser transmitter system that is based on Er-doped fiber amplifier resonantly pumped...

  20. Origin of the high p-doping in F intercalated graphene on SiC

    KAUST Repository

    Cheng, Yingchun

    2011-08-04

    The atomic and electronic structures of F intercalated epitaxialgraphene on a SiC(0001) substrate are studied by first-principles calculations. A three-step fluorination process is proposed. First, F atoms are intercalated between the graphene and the SiC, which restores the Dirac point in the band structure. Second, saturation of the topmost Si dangling bonds introduces p-doping up to 0.37 eV. Third, F atoms bond covalently to the graphene to enhance the p-doping. Our model explains the highly p-doped state of graphene on SiC after fluorination [A. L. Walter et al., Appl. Phys. Lett. 98, 184102 (2011)].

  1. Flexible High Energy Lidar Transmitter for Remote Gas and Wind Sensing Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Fibertek proposes a high energy and flexible operation 1570 nm pulsed lidar transmitter for airborne and space-based remote CO2 gas and doppler wind sensing. The...

  2. High yield polycarbosilane precursors to stoichiometric SiC. Synthesis, pyrolysis and application

    Energy Technology Data Exchange (ETDEWEB)

    Interrante, L.V.; Wu, H.J. [Rensselaer Polytechnic Inst., Troy, NY (United States). Dept. of Chemistry; Whitmarsh, C.W.; Sherwood, W. [Starfire Systems, Inc., Glenville, NY (United States); Lewis, R.; Maciel, G. [Colorado State Univ., Fort Collins, CO (United States). Dept. of Chemistry

    1994-12-31

    The synthesis and properties of two polycarbosilanes that have essentially a ``SiH{sub 2}CH{sub 2}`` composition is described. One of these polymers is a highly branched hydridopolycarbosilane (HPCS) derived from Grignard coupling of Cl{sub 3}SiCH{sub 2}Cl followed by LiAlH{sub 4} reduction. This synthesis is amenable to large scale production and the authors are exploring applications of HPCS as a source of SiC coatings and its allyl-derivative, AHPCS, as a matrix source for SiC and C-fiber reinforced composites. These polymers thermoset on heating at 200--400 C (or at 100 C with a catalyst) and give near stoichiometric SiC with low O content in ca. 80% yield on pyrolysis to 1,000 C. The second method involves ring-opening polymerization of 1,1,3,3-tetrachlorodisilacyclobutane and yields a high molecular weight, linear polymer that can be reduced to [SiH{sub 2}CH{sub 2}]{sub n} (PSE), the monosilicon analog of polyethylene. In contrast to high density polyethylene which melts at 135 C, PSE is a liquid at room temperature which crystallizes at ca. 5 C. On pyrolysis to 1,000 C, PSE gives stoichiometric, nanocrystalline, SiC in virtually quantitative yield. The polymer-to-ceramic conversion was examined for PSE by using TGA, mass spec., solid state NMR, and IR methods yielding information regarding the cross-linking and structural evolution processes. The results of these studies of the polymer-to-ceramic conversion process and their efforts to employ the AHPCS polymer as a source of SiC matrices are described.

  3. High Power Silicon Carbide (SiC) Power Processing Unit Development

    Science.gov (United States)

    Scheidegger, Robert J.; Santiago, Walter; Bozak, Karin E.; Pinero, Luis R.; Birchenough, Arthur G.

    2015-01-01

    NASA GRC successfully designed, built and tested a technology-push power processing unit for electric propulsion applications that utilizes high voltage silicon carbide (SiC) technology. The development specifically addresses the need for high power electronics to enable electric propulsion systems in the 100s of kilowatts. This unit demonstrated how high voltage combined with superior semiconductor components resulted in exceptional converter performance.

  4. Packaging Technology Developed for High-Temperature SiC Sensors and Electronics

    Science.gov (United States)

    Chen, Liang-Yu; Hunter, Gary W.; Neudeck, Philip G.; Lei, Jih-Fen

    2000-01-01

    A ceramic- and thick-film-materials-based prototype electronic package designed for silicon carbide (SiC) high-temperature sensors and electronics has been successfully tested at 500 C in an oxygen-containing air environment for 500 hours. This package was designed, fabricated, assembled, and electronically evaluated at the NASA Glenn Research Center at Lewis Field with an in-house-fabricated SiC semiconductor test chip. High-temperature electronics and sensors are necessary for harsh-environment space and aeronautical applications, such as space missions to the inner solar system or the emission control electronics and sensors in aeronautical engines. Single-crystal SiC has such excellent physical and chemical material properties that SiC-based semiconductor electronics can operate at temperatures over 600 C, which is significantly higher than the limit for Si-based semiconductor devices. SiC semiconductor chips were recently demonstrated to be operable at temperatures as high as 600 C, but only in the probe station environment because suitable packaging technology for sensors and electronics at temperatures of 500 C and beyond did not exist. Thus, packaging technology for SiC-based sensors and electronics is immediately needed for both application and commercialization of high-temperature SiC sensors and electronics. In response to this need, researchers at Glenn designed, fabricated, and assembled a prototype electronic package for high-temperature electronics, sensors, and microelectromechanical systems (MEMS) using aluminum nitride (AlN) substrate and gold (Au) thick-film materials. This prototype package successfully survived a soak test at 500 C in air for 500 hours. Packaging components tested included thick-film high-temperature metallization, internal wire bonds, external lead bonds, and a SiC diode chip die-attachment. Each test loop, which was composed of thick-film printed wire, wire bond, and lead bond was subjected to a 50-mA direct current for 250

  5. Integration and test of high-speed transmitter electronics for free-space laser communications

    Science.gov (United States)

    Soni, Nitin J.; Lizanich, Paul J.

    1994-01-01

    The NASA Lewis Research Center in Cleveland, Ohio, has developed the electronics for a free-space, direct-detection laser communications system demonstration. Under the High-Speed Laser Integrated Terminal Electronics (Hi-LITE) Project, NASA Lewis has built a prototype full-duplex, dual-channel electronics transmitter and receiver operating at 325 megabit S per second (Mbps) per channel and using quaternary pulse-position modulation (QPPM). This paper describes the integration and testing of the transmitter portion for future application in free-space, direct-detection laser communications. A companion paper reviews the receiver portion of the prototype electronics. Minor modifications to the transmitter were made since the initial report on the entire system, and this paper addresses them. The digital electronics are implemented in gallium arsenide integrated circuits mounted on prototype boards. The fabrication and implementation issues related to these high-speed devices are discussed. The transmitter's test results are documented, and its functionality is verified by exercising all modes of operation. Various testing issues pertaining to high-speed circuits are addressed. A description of the transmitter electronics packaging concludes the paper.

  6. A Highly intense DC muon source, MuSIC and muon CLFV search

    Energy Technology Data Exchange (ETDEWEB)

    Hino, Y.; Kuno, Y.; Sato, A. [Department of Physics, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Sakamoto, H. [Department of Physics, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Research Center of Nuclear Physics, 10-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Matsumoto, Y.; Tran, N.H.; Hashim, I.H. [Department of Physics, Osaka University, 1-1 Machikaneyama, Toyonaka, Osaka 560-0043 (Japan); Fukuda, M.; Hayashida, Y. [Research Center of Nuclear Physics, 10-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan); Ogitsu, T.; Yamamoto, A.; Yoshida, M. [High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan)

    2014-08-15

    MuSIC is a new muon facility, which provides the world's highest intense muon beam with continuous time structure at Research Center of Nuclear Physics (RCNP), Osaka University. It's intensity is designed to be 10{sup 8} muons per second with only 0.4 kW proton beam. Such a high intense muon beam is very important for searches of rare decay processes, for example search for the muon to electron conversion.

  7. High Temperature All Silicon-Carbide (SiC) DC Motor Drives for Venus Exploration Vehicles Project

    Data.gov (United States)

    National Aeronautics and Space Administration — This Small Business Innovation Research Phase I project seeks to prove the feasibility of creating high-temperature silicon-carbide (SiC) based motor drives for...

  8. Electromagnetic interference shielding performance of nano-layered Ti3SiC2 ceramics at high-temperatures

    Directory of Open Access Journals (Sweden)

    Sigong Li

    2018-01-01

    Full Text Available The X-band electromagnetic interference (EMI shielding properties of nano-layered Ti3SiC2 ceramics were evaluated from room temperature up to 800°C in order to explore the feasibility of Ti3SiC2 as efficient high temperature EMI shielding material. It was found that Ti3SiC2 exhibits satisfactory EMI shielding effectiveness (SE close to 30 dB at room temperature and the EMI SE shows good temperature stability. The remarkable EMI shielding properties of Ti3SiC2 can be mainly attributed to high electrical conductivity, high dielectric loss and more importantly the multiple reflections due to the layered structure.

  9. Preparation and characterization of high-transmittance AZO films using RF magnetron sputtering at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Jian [College of Materials and Chemical Engineering, Collaborative Innovation Center for Energy Equipment of Three Gorges Region, China Three Gorges University, Yichang 443002 (China); Sun, Yihua, E-mail: sunyihua316181@163.com [College of Materials and Chemical Engineering, Collaborative Innovation Center for Energy Equipment of Three Gorges Region, China Three Gorges University, Yichang 443002 (China); Lv, Xin; Li, Derong [Glass Industry Engineering Research Center of Hubei Province, Hubei Sanxia New Building Materials Co., Ltd., Dangyang 444105 (China); Fang, Liang; Wang, Hailin; Sun, Xiaohua; Huang, Caihua; Yu, Haizhou; Feng, Ping [College of Materials and Chemical Engineering, Collaborative Innovation Center for Energy Equipment of Three Gorges Region, China Three Gorges University, Yichang 443002 (China)

    2014-10-30

    Highlights: • We prepared the AZO thin films on soda-lime glass without the substrate heated. • High-transmittance AZO films had been obtained by RF magnetron sputtering using a ceramic target. • The minimum resistivity of 2.55 × 10{sup −3} Ω cm combined with highest transmittance of 91% was obtained at a sputtering power of 400 W. • The resistivity decreased and transmittance improved with the sputtering power increase. - Abstract: Aluminum-doped zinc oxide (AZO) thin films with 250 nm thickness had been prepared on soda-lime glass substrate without heated by RF magnetron sputtering using a ceramic target. The microstructure, surface morphology, electrical and optical properties of AZO thin films had been investigated by X-ray diffraction, scanning electron microscope, four-point probe method and optical transmission spectroscopy. The results indicated that all of the films obtained were polycrystalline with a hexagonal structure and oriented with the c-axis perpendicular to the substrate. The resistivity decreased and transmittance improved with the sputtering power increase. The minimum resistivity of 2.55 × 10{sup −3} Ω cm combined with highest transmittance of 91% was obtained at a sputtering power of 400 W. The optical bandgap at different sputtering power varied among 3.81–4.04 eV.

  10. A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

    Science.gov (United States)

    Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

    2018-01-01

    Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

  11. Comparative study by IBIC of Si and SiC diodes irradiated with high energy protons

    Energy Technology Data Exchange (ETDEWEB)

    Garcia Lopez, J., E-mail: fjgl@us.es [Dpto. Física Atómica, Molecular y Nuclear, Universidad de Sevilla, 41080 Sevilla (Spain); CNA (U. Sevilla, J. Andalucia, CSIC), Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Jimenez-Ramos, M.C.; Rodriguez-Ramos, M. [CNA (U. Sevilla, J. Andalucia, CSIC), Av. Thomas A. Edison 7, 41092 Sevilla (Spain); Ceballos, J. [Institute of Microelectronics of Seville, IMSE-CNM (CSIC/University of Seville), Seville 41092 (Spain); Linez, F. [Department of Applied Physics, Aalto University, 02150 Espoo (Finland); Raisanen, J. [Department of Physics, University of Helsinki, Helsinki 00014 (Finland)

    2016-04-01

    The transport properties of a series of Si and SiC diodes have been studied using the Ion Beam Induced Charge (IBIC) technique. Structural defects were induced into the samples during the irradiation with 17 MeV protons. The experimental values of the charge collection efficiency (CCE) vs bias voltages have been analyzed using a modified drift-diffusion model, which takes into account the recombination of carriers in the neutral and depletion regions. From these simulations, we have obtained the values of the carrier’s lifetime for pristine and irradiated diodes, which are found to degrade faster in the case of the SiC samples. However, the decrease of the CCE at high bias voltages is more important for the Si detectors, indicative of the lower radiation hardness of this material compared to SiC. The nature of the proton-induced defects on Si wafers has been studied by Positron Annihilation Spectroscopy (PAS) and Doppler Broadening Spectroscopy (DBS). The results suggest that the main defect detected by the positrons in p-type samples is the divacancy while for n-type at least a fraction of the positron annihilate in another defect. The concentration of defects is much lower than the number of vacancies predicted by SRIM.

  12. High voltage 4H SiC rectifiers using Pt and Ni metallization

    Energy Technology Data Exchange (ETDEWEB)

    Saxena, V.; Steckl, A.J. [Cincinnati Univ., OH (United States). Nanoelectronic Lab.

    1998-08-01

    We have fabricated high voltage 4H SiC rectifier diodes using Ni and Pt as metals for the Schottky contacts. At a current density of 100 A/cm{sup 2}, these diodes had a forward voltage drop of 1.76 and 1.86 V, respectively. Both Ni- and Pt-SiC diodes had breakdown voltages >1000 V. Pt-based SiC diodes exhibited a higher on-off current ratio (>10{sup 8}) and lower ideality factor (1.11) at room temperature than the Ni-based diodes (>10{sup 6} and 1.29). The diodes were operated at elevated temperatures up to 450 C for forward bias and 300 C for reverse bias. The room temperature barrier height of Ni on 4H SiC was determined to be 1.31 eV and the specific on-resistance of the diodes was found to be {proportional_to}8 m{Omega}-cm{sup 2}. (orig.) 9 refs.

  13. High transmittance optical films based on quantum dot doped nanoscale polymer dispersed liquid crystals

    Science.gov (United States)

    Gandhi, Sahil Sandesh; Chien, Liang-Chy

    2016-04-01

    We propose a simple way to fabricate highly transparent nanoscale polymer dispersed liquid crystal (nano-PDLC) films between glass substrates and investigate their incident angle dependent optical transmittance properties with both collimated and Lambertian intensity distribution light sources. We also demonstrate that doping nano-PDLC films with 0.1% InP/ZnS core/shell quantum dots (QD) results in a higher optical transmittance. This work lays the foundation for such nanostructured composites to potentially serve as roll-to-roll coatable light extraction or brightness enhancement films in emissive display applications, superior to complex nanocorrugation techniques proposed in the past.

  14. Topology optimised photonic crystal waveguide intersections with high-transmittance and low crosstalk

    DEFF Research Database (Denmark)

    Ikeda, N; Sugimoto, Y; Watanabe, Y

    2006-01-01

    Numerical and experimental studies on the photonic crystal waveguide intersection based on the topology optimisation design method are reported and the effectiveness of this technique is shown by achieving high transmittance spectra with low crosstalk for the straightforward beam-propagation line...

  15. High Performance Design of 100Gb/s DPSK Optical Transmitter

    DEFF Research Database (Denmark)

    Das, Bhagwan; Abdullah, M.F.L; Shah, Nor Shahihda Mohd

    2016-01-01

    High performance communication systems require high performance devices for exchanging information at a faster rate. These devices are experiencing several challenges e.g. bandwidth limitations, power limitations, design limitations and etc. The existing techniques are lacking in providing high...... performance output simultaneously by maintaining actual parameters of device. In this work, high performance 100Gb/s optical DPSK transmitter design is realized in Field Programming Gate (FPGA) using time constraint technique. Before applying the proposed technique actual FPGA’s frequency was 0.2 GHz....... This high performance design of optical transmitter has zero timing error, low timing score and high slack time due to synchronization between input data and clock frequency. It is also determined that 99% timing score is reduced in comparison with 1 GHz frequency that has high jitters, high timing error...

  16. Comparative Study of Si and SiC MOSFETs for High Voltage Class D Audio Amplifiers

    DEFF Research Database (Denmark)

    Nielsen, Dennis; Knott, Arnold; Andersen, Michael A. E.

    2014-01-01

    Silicon (Si) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) are traditional utilised in class D audio amplifiers. It has been proposed to replace the traditional inefficient electrodynamic transducer with the electrostatic transducer. This imposes new high voltage requirements...... on the MOSFETs of class D amplifiers, and significantly reduces the selection of suitable MOSFETs. As a consequence it is investigated, if Silicon-Carbide (SiC) MOSFETs could represent a valid alternative. The theory of pulse timing errors are revisited for the application of high voltage and capactive loaded...

  17. Design of an Omnidirectional Multibeam Transmitter for High-Speed Indoor Wireless Communications

    Directory of Open Access Journals (Sweden)

    Jaw-Luen Tang

    2010-01-01

    Full Text Available For future high speed indoor wireless communication, diffuse wireless optical communications offer more robust optical links against shadowing than line-of-sight links. However, their performance may be degraded by multipath dispersion arising from surface reflections. We have developed a multipath diffusive propagation model capable of providing channel impulse responses data. It is aimed to design and simulate any multibeam transmitter under a variety of indoor environments. In this paper, a multi-beam transmitter system associated with hemisphere structure is proposed to fight against the diverse effects of multipath distortion albeit, at the cost of increased laser power and cost. Simulation results of multiple impulse responses showed that this type of multi-beam transmitter can significantly improve the performance of BER suitable for high bit rate application. We present the performance and simulation results for both line-of-sight and diffuse link configurations. We propose a design of power radiation pattern for a transmitter in achieving uniform and full coverage of power distributions for diffuse indoor optical wireless systems.

  18. Development of Instrument Transmitter Protecting Device against High-Temperature Condition during Severe Accidents

    Directory of Open Access Journals (Sweden)

    Min Yoo

    2014-01-01

    Full Text Available Reliable information through instrumentation systems is essential in mitigating severe accidents such as the one that occurred at the Fukushima Daiichi nuclear power plant. There are five elements which might pose a potential threat to the reliability of parameter detection at nuclear power plants during a severe accident: high temperature, high pressure, high humidity, high radiation, and missiles generated during the evolution of a severe accident. Of these, high temperature apparently poses the most serious threat, since thin shielding can get rid of pressure, humidity, radiation (specifically, alpha and beta radiations, and missile effects. In view of this fact, our study focused on designing an instrument transmitter protecting device that can eliminate the high-temperature effect on transmitters to maintain their functional integrity. We present herein a novel concept for designing such a device in terms of heat transfer model that takes into account various heat transfer mechanisms associated with the device.

  19. Electrical Impact of SiC Structural Crystal Defects on High Electric Field Devices

    Science.gov (United States)

    Neudeck, Philip G.

    1999-01-01

    Commercial epilayers are known to contain a variety of crystallographic imperfections. including micropipes, closed core screw dislocations. low-angle boundaries, basal plane dislocations, heteropolytypic inclusions, and non-ideal surface features like step bunching and pits. This paper reviews the limited present understanding of the operational impact of various crystal defects on SiC electrical devices. Aside from micropipes and triangular inclusions whose densities have been shrinking towards manageably small values in recent years, many of these defects appear to have little adverse operational and/or yield impact on SiC-based sensors, high-frequency RF, and signal conditioning electronics. However high-power switching devices used in power management and distribution circuits have historically (in silicon experience) demanded the highest material quality for prolonged safe operation, and are thus more susceptible to operational reliability problems that arise from electrical property nonuniformities likely to occur at extended crystal defects. A particular emphasis is placed on the impact of closed-core screw dislocations on high-power switching devices, because these difficult to observe defects are present in densities of thousands per cm,in commercial SiC epilayers. and their reduction to acceptable levels seems the most problematic at the present time.

  20. CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy

    Energy Technology Data Exchange (ETDEWEB)

    Li Xin; Fu Jian; Huang Yumei; Hong Zhiliang, E-mail: yumeihuang@fudan.edu.cn [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

    2011-08-15

    A highly linear, high output power, 0.13 {mu}m CMOS direct conversion transmitter for wideband code division multiple access (WCDMA) is described. The transmitter delivers 6.8 dBm output power with 38 mA current consumption. With careful design on the resistor bank in the IQ-modulator, the gain step accuracy is within 0.1 dB, hence the image rejection ratio can be kept below -47 dBc for the entire output range. The adjacent channel leakage ratio and the LO leakage at 6.8 dBm output power are -44 dBc - 5 MHz and -37 dBc, respectively, and the corresponding EVM is 3.6%. The overall gain can be programmed in 6 dB steps in a 66-dB range.

  1. CMOS highly linear direct-conversion transmitter for WCDMA with fine gain accuracy

    Science.gov (United States)

    Xin, Li; Jian, Fu; Yumei, Huang; Zhiliang, Hong

    2011-08-01

    A highly linear, high output power, 0.13 μm CMOS direct conversion transmitter for wideband code division multiple access (WCDMA) is described. The transmitter delivers 6.8 dBm output power with 38 mA current consumption. With careful design on the resistor bank in the IQ-modulator, the gain step accuracy is within 0.1 dB, hence the image rejection ratio can be kept below -47 dBc for the entire output range. The adjacent channel leakage ratio and the LO leakage at 6.8 dBm output power are -44 dBc @ 5 MHz and -37 dBc, respectively, and the corresponding EVM is 3.6%. The overall gain can be programmed in 6 dB steps in a 66-dB range.

  2. High optical transmittance of aluminum ultrathin film with hexagonal nanohole arrays as transparent electrode

    KAUST Repository

    Du, Qing Guo

    2016-02-24

    We fabricate samples of aluminum ultrathin films with hexagonal nanohole arrays and characterize the transmission performance. High optical transmittance larger than 60% over a broad wavelength range from 430 nm to 750 nm is attained experimentally. The Fano-type resonance of the excited surface plasmon plaritons and the directly transmitted light attribute to both of the broadband transmission enhancement and the transmission suppression dips. © 2016 Optical Society of America.

  3. Robust Short-Pulse, High-Peak-Power Laser Transmitter for Optical Communications

    Science.gov (United States)

    Wright, Malcolm W.

    2009-01-01

    We report on a pulsed fiber based master oscillator power amplifier laser at 1550 nm to support moderate data rates with high peak powers in a compact package suitable for interplanetary optical communications. To accommodate pulse position modulation, the polarization maintaining laser transmitter generates pulses from 0.1 to 1 ns with variable duty cycle over a pulse repetition frequency range of 10 to 100 MHz.

  4. Cs diffusion in SiC high-energy grain boundaries

    Science.gov (United States)

    Ko, Hyunseok; Szlufarska, Izabela; Morgan, Dane

    2017-09-01

    Cesium (Cs) is a radioactive fission product whose release is of concern for Tristructural-Isotropic fuel particles. In this work, Cs diffusion through high energy grain boundaries (HEGBs) of cubic-SiC is studied using an ab-initio based kinetic Monte Carlo (kMC) model. The HEGB environment was modeled as an amorphous SiC, and Cs defect energies were calculated using the density functional theory (DFT). From defect energies, it was suggested that the fastest diffusion mechanism is the diffusion of Cs interstitial in an amorphous SiC. The diffusion of Cs interstitial was simulated using a kMC model, based on the site and transition state energies sampled from the DFT. The Cs HEGB diffusion exhibited an Arrhenius type diffusion in the range of 1200-1600 °C. The comparison between HEGB results and the other studies suggests not only that the GB diffusion dominates the bulk diffusion but also that the HEGB is one of the fastest grain boundary paths for the Cs diffusion. The diffusion coefficients in HEGB are clearly a few orders of magnitude lower than the reported diffusion coefficients from in- and out-of-pile samples, suggesting that other contributions are responsible, such as radiation enhanced diffusion.

  5. The exploratory development of a high power S-band solid state radar transmitter

    Science.gov (United States)

    Hay, J. D.; Kerstenbeck, E. A.; Rahn, D. G.; Halayko, D. W.; Painchaud, G. R.

    A solid-state power amplifier has been developed using 100-W S-band silicon bipolar transistors. The amplifier produces a nominal 400-W peak output power from 2.7 GHz to 3.0 GHz, at pulse widths up to 50 microsec, at a 10 percent maximum duty cycle and 30 percent efficiency. A high-power planar hybrid combiner was also designed to combine 16 amplifiers to provide a nominal 5-kW RF output power. The isolation between combining ports ensures graceful degradation of output power should individual amplifier modules fail, and allows replacement of the modules during transmitter operation. Higher output powers can be achieved by adding more combining ports to the design or by incorporating a second stage of combining to sum the outputs from several 16-way combiners. The feasibility of solid-state radar transmitter technology at S-band is confirmed.

  6. Development of a high current high temperature SiC MOSFET based solid-state power controller

    Science.gov (United States)

    Guo, Yuanbo

    Solid-State Power Controllers (SSPCs) are critical components in the development of electric aircraft and must be small in size, fast in response, and have high reliability. They are also proposed for use in microgrids to improve the power quality and system reliability. The development of Silicon Carbide (SiC) semiconductor switches provides a series of improvements for the SSPCs in both electrical and thermal performances. In the proposed SSPC design investigation, SiC MOSFETs die are mounted on cast-aluminum traces, under which are an aluminum nitride (AlN) layer and an aluminum composite base plate. The concept of i2t and its application in solid state protection is discussed in detail. Transient thermal characterizations of SiC MOSFETs are provided for a nearly-all-aluminum package by Finite Element Analysis (FEA). The SSPC is targeted for 120A nominal, 1200A fault current, 270V DC system, and working at 105°C environment with a maximum 350°C transient junction temperature capability.

  7. Acoustic characterization of high intensity focused ultrasound fields generated from a transmitter with a large aperture

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Tao; Fan, Tingbo [Institute of Acoustics, Key Laboratory of Modern Acoustics, MOE, Nanjing University, Nanjing 210093 (China); Jiangsu Province Institute for Medical Equipment Testing, Nanjing 210012 (China); Zhang, Wei [Jiangsu Province Institute for Medical Equipment Testing, Nanjing 210012 (China); Qiu, Yuanyuan [Department of electronic information, Nantong University, Nantong 226019 (China); Tu, Juan, E-mail: juantu@nju.edu.cn, E-mail: dzhang@nju.edu.cn; Guo, Xiasheng [Institute of Acoustics, Key Laboratory of Modern Acoustics, MOE, Nanjing University, Nanjing 210093 (China); Zhang, Dong, E-mail: juantu@nju.edu.cn, E-mail: dzhang@nju.edu.cn [Institute of Acoustics, Key Laboratory of Modern Acoustics, MOE, Nanjing University, Nanjing 210093 (China); Institute of Acoustics, State Key Laboratory of Acoustics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-03-21

    Prediction and measurement of the acoustic field emitted from a high intensity focused ultrasound (HIFU) is essential for the accurate ultrasonic treatment. In this study, the acoustic field generated from a strongly focused HIFU transmitter was characterized by a combined experiment and simulation method. The spheroidal beam equation (SBE) was utilized to describe the nonlinear sound propagation. The curve of the source pressure amplitude versus voltage excitation was determined by fitting the measured ratio of the second harmonic to the fundamental component of the focal waveform to the simulation result; finally, the acoustic pressure field generated by the strongly focused HIFU transmitter was predicted by using the SBE model. A commercial fiber optic probe hydrophone was utilized to measure the acoustic pressure field generated from a 1.1 MHz HIFU transmitter with a large half aperture angle of 30°. The maximum measured peak-to-peak pressure was up to 72 MPa. The validity of this combined approach was confirmed by the comparison between the measured results and the calculated ones. The results indicate that the current approach might be useful to describe the HIFU field. The results also suggest that this method is not valid for low excitations owing to low sensitivity of the second harmonic.

  8. Design of a high-performance cascaded boost converter with SiC power devices for photovoltaic applications

    Science.gov (United States)

    Alharbi, Saleh S.; Al-bayati, Ali M. S.; Alharbi, Salah S.; Matin, Mohammad

    2017-08-01

    This paper presents a positive output cascaded boost converter design based on wide bandgap power devices for photovoltaic (PV) applications. The objective is to enhance the converter's performance and efficiency. The converter with SiC MOSFET devices is discussed and compared to a conventional cascaded boost converter based on Silicon (Si) devices. A 205 W cascaded boost converter with an input voltage of 26.6 V and an output voltage of 400 V is simulated to examine the switching behavior and energy loss of each power device. Converter performance with these two power devices is analyzed in terms of total power loss and efficiency at high switching frequencies and loading conditions. SiC power devices in the cascaded converter set-up perform better with minimized switching loss under a wide range of switching frequency conditions. The results show that the cascaded converter with SiC devices significantly reduces total power loss and improves the overall efficiency.

  9. The first muon beam from a new highly-intense DC muon source, MuSIC

    Science.gov (United States)

    Tran, Nam Hoai; MuSIC Collaboration

    2012-09-01

    A new DC muon source, MuSIC, is now under construction at Research Center for Nuclear Physics (RCNP), Osaka University, Japan. The MuSIC adopts a new pion/muon collection system and a curved transport solenoid. These techniques are important in realization of future muon programs such as the muon to electron conversion experiments (COMET/Mu2e), neutrino factories, and muon colliders. The pion capture magnet and a part of the transport solenoid have been built and beam tests were carried out to assess the MuSIC's performance. Muon lifetime measurements and muonic X-ray measurements have been used for estimation of muon yield of the MuSIC. The result indicates that the MuSIC would be one of the most intense DC muon beams in the world.

  10. Oxidation of TaSi2-Containing ZrB2-SiC Ultra-High Temperature Materials

    Science.gov (United States)

    Opila, Elizabeth J.; Smith, Jim; Levine, Stanley R.; Lorincz, Jonathan; Reigel, Marissa

    2010-01-01

    Hot pressed coupons of composition ZrB2-20 v% SiC-5 v% TaSi2 and ZrB2-20 v% SiC-20 v% TaSi2 were oxidized in stagnant air at temperatures of 1627 and 1927C for one, five and ten 10-minute cycles. The oxidation reactions were characterized by weight change kinetics, x-ray diffraction, and SEM/EDS. Detailed WDS/microprobe quantitative analyses of the oxidation products were conducted for the ZrB2-20 v% SiC-20 v% TaSi2 sample oxidized for five 10-minute cycles at 1927C. Oxidation kinetics and product formation were compared to ZrB2-20 v% SiC with no TaSi2 additions. It was found that the 20 v% TaSi2 composition exhibited improved oxidation resistance relative to the material with no TaSi2 additions at 1627C. However, for exposures at 1927C less oxidation resistance and extensive liquid phase formation were observed compared to the material with no TaSi2 additions. Attempts to limit the liquid phase formation by reducing the TaSi2 content to 5 v% were unsuccessful. In addition, the enhanced oxidation resistance at 1627C due to 20 v% TaSi2 additions was not achieved at the 5 v% addition level. The observed oxidation product evolution is discussed in terms of thermodynamics and phase equilibria for the TaSi2-containing ZrB2-SiC material system. TaSi2-additions to ZrB2-SiC at any level are not recommended for ultra-high temperature (>1900C) applications due to excessive liquid phase formation.

  11. Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review

    Science.gov (United States)

    Casady, J. B.; Johnson, R. W.

    1996-10-01

    Silicon carbide (SiC), a material long known with potential for high-temperature, high-power, high-frequency, and radiation hardened applications, has emerged as the most mature of the wide-bandgap (2.0 eV ≲ Eg ≲ 7.0 eV) semiconductors since the release of commercial 6HSiC bulk substrates in 1991 and 4HSiC substrates in 1994. Following a brief introduction to SiC material properties, the status of SiC in terms of bulk crystal growth, unit device fabrication processes, device performance, circuits and sensors is discussed. Emphasis is placed upon demonstrated high-temperature applications, such as power transistors and rectifiers, turbine engine combustion monitoring, temperature sensors, analog and digital circuitry, flame detectors, and accelerometers. While individual device performances have been impressive (e.g. 4HSiC MESFETs with fmax of 42 GHz and over 2.8 W mm -1 power density; 4HSiC static induction transistors with 225 W power output at 600 MHz, 47% power added efficiency (PAE), and 200 V forward blocking voltage), material defects in SiC, in particular micropipe defects, remain the primary impediment to wide-spread application in commercial markets. Micropipe defect densities have been reduced from near the 1000 cm -2 order of magnitude in 1992 to 3.5 cm -2 at the research level in 1995.

  12. A scheme for a high-power, low-cost transmitter for deep space applications

    Science.gov (United States)

    Scheffer, L. K.

    2005-10-01

    Applications such as planetary radars and spacecraft communications require transmitters with extremely high effective isotropic radiated power. Until now, this has been done by combining a high-power microwave source with a large reflective antenna. However, this arrangement has a number of disadvantages. It is costly, since the steerable reflector alone is quite expensive, and for spacecraft communications, the need to transmit hurts the receive performance. For planetary radars, the utilization is very low since the antenna must be shared with other applications such as radio astronomy or spacecraft communications. This paper describes a potential new way of building such transmitters with lower cost, greater versatility, higher reliability, and potentially higher power. The basic idea is a phased array with a very large number of low-power elements, built with mass production techniques that have been optimized for consumer markets. The antennas are built en mass on printed circuit boards and are driven by chips, built with consumer complementary metal-oxide-semiconductor technology, that adjust the phase of each element. Assembly and maintenance should be comparatively inexpensive since the boards need only be attached to large, flat, unmoving, ground-level infrastructure. Applications to planetary radar and spacecraft communications are examined. Although we would be unlikely to use such a facility in this way, an implication for Search for Extraterrestrial Intelligence (SETI) is that high-power beacons are easier to build than had been thought.

  13. High Repetition Rate Pulsed 2-Micron Laser Transmitter for Coherent CO2 DIAL Measurement

    Science.gov (United States)

    Singh, Uprendra N.; Bai, Yingxin; Yu, Jirong; Petros, Mulugeta; Petzar, Paul J.; Trieu, Bo C.; Lee, Hyung

    2009-01-01

    A high repetition rate, highly efficient, Q-switched 2-micron laser system as the transmitter of a coherent differential absorption lidar for CO2 measurement has been developed at NASA Langley Research Center. Such a laser transmitter is a master-slave laser system. The master laser operates in a single frequency, either on-line or off-line of a selected CO2 absorption line. The slave laser is a Q-switched ring-cavity Ho:YLF laser which is pumped by a Tm:fiber laser. The repetition rate can be adjusted from a few hundred Hz to 10 kHz. The injection seeding success rate is from 99.4% to 99.95%. For 1 kHz operation, the output pulse energy is 5.5mJ with the pulse length of approximately 50 ns. The optical-to-optical efficiency is 39% when the pump power is 14.5W. The measured standard deviation of the laser frequency jitter is about 3 MHz.

  14. Ultra-Lightweight, High Efficiency Silicon-Carbide (SIC) Based Power Electronic Converters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I of this project, APEI, Inc. proved the feasibility of creating ultra-lightweight power converters (utilizing now emerging silicon carbide [SiC] power...

  15. High-performance SiC avalanche photodiode for single ultraviolet photon detection

    Science.gov (United States)

    Bai, Xiaogang; Liu, Han-din; McIntosh, Dion; Campbell, Joe C.

    2008-08-01

    Sensitive ultraviolet photodetectors are essential components for a growing number of civilian and military applications. In this paper, we report 4H Silicon Carbide (SiC) avalanche photodiodes (APDs) with a p-i-n structure. These APDs, range in diameter from 180 μm to 250μm, exhibit very low dark current (10s of pA at avalanche gain of 1000) and high gain in linear-mode operation. An external quantum efficiency of 48% at 280 nm is achieved at unity gain with a recessed-window structure. The differential resistance of a 250 μm recessed-window device at zero bias is estimated to be 6×1014 ohms. As a result of high external quantum efficiency, large area, and large differential resistance, a record high specific detectivity of 4.1×1014 cmHz 1/2 W-1, has been achieved. Single ultraviolet photon detection in Geiger-mode operation with gated quenching is also described. In this paper, we report single photon detection efficiency (SPDE) of 30% at 280 nm with a dark count probability (DCP) of 8×10-4.

  16. Design of a cholesteric liquid crystal cell for a high-transmittance light shutter

    Science.gov (United States)

    Yu, Byeong-Hun; Huh, Jae-Won; Yoon, Tae-Hoon

    2014-02-01

    Recently, active studies on a transparent organic light-emitting diode (OLED) are in progress as a next generation display. However, since it is not possible to obtain a dark state using a transparent OLED, it exhibits poor visibility. This inevitable problem can be solved by placing a light shutter behind a transparent OLED display. In this paper, we propose a light shutter using dye-doped liquid crystals (LCs) whose Bragg reflection wavelength is chosen to be infrared by controlling the pitch of cholesteric liquid crystals (ChLCs). The proposed light shutter is switchable between the dark planar state and the transparent homeotropic state. The proposed light shutter has the advantages of the high transmittance, low operation voltage, and easy fabrication process compared with previous light shutter devices using liquid crystals. It is expected that the proposed light shutter can be applied to realize high visibility transparent OLEDs and emerging smart windows.

  17. Long-range measurement system using ultrasonic range sensor with high-power transmitter array in air.

    Science.gov (United States)

    Kumar, Sahdev; Furuhashi, Hideo

    2017-02-01

    A long-range measurement system comprising an ultrasonic range sensor with a high-power ultrasonic transmitter array in air was investigated. The system is simple in construction and can be used under adverse conditions such as fog, rain, darkness, and smoke. However, due to ultrasonic waves are well absorbed by air molecules, the measurable range is limited to a few meters. Therefore, we developed a high-power ultrasonic transmitter array consisting of 144 transmitting elements. All elements are arranged in the form of a 12×12 array pattern. The sound pressure level at 5m from the transmitter array was >30dB higher than that of a single element. A measuring range of over 25m was achieved using this transmitter array in conjunction with a receiver array having 32 receiving elements. The characteristics of the transmitter array and range sensor system are discussed by comparing simulation and experimental results. Copyright © 2016 Elsevier B.V. All rights reserved.

  18. MICROSCOPIC ASPECT AND MECHANICS OF CREEP-FATIGUE FAILURE IN SiC WHISKER REINFORCED ALUMINUM BASE COMPOSITE AT HIGH TEMPERATURE

    National Research Council Canada - National Science Library

    OKAZAKI, Masakazu; TASHIRO, Hiromichi; MIZUTANI, Junnosuke

    1997-01-01

    The microscopic aspect of creep-fatigue failure process in a 6061 aluminum alloy composite reinforced with SiC whiskers, SiCw/6061, was studied at high temperature, with specific attention being paid...

  19. A Comparison of SiC Power Switches for High-Rel Defense Applications (preprint)

    Science.gov (United States)

    2007-07-01

    junction transistor ( BJT ). The VJFET is principally valued for having demonstrated the highest current and voltage combinations, positive...for defense applications. They are the vertical junction field effect transistor (VJFET), the metal-oxide-semiconductor FET (MOSFET), and the bipolar...most technologically ready SiC power switch, the vertical junction field effect transistor (VJFET), has been demonstrated in preproduction devices at

  20. Re-evaluation of SiC permeation coefficients at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, Yasushi, E-mail: yama3707@kansai-u.ac.jp [Faculty of Engineering Science, Kansai Univ., Yamate-cho, Suita, Osaka 564-8680 (Japan); Murakami, Yuichiro; Yamaguchi, Hirosato; Yamamoto, Takehiro; Yonetsu, Daigo [Faculty of Engineering Science, Kansai Univ., Yamate-cho, Suita, Osaka 564-8680 (Japan); Noborio, Kazuyuki [Hydrogen Isotope Research Center, Univ. of Toyama, Toyama, Toyama 930-8555 (Japan); Konishi, Satoshi [Institute of Advanced Energy, Kyoto Univ., Gokasho, Uji, Kyoto 611-0011 (Japan)

    2016-11-01

    Highlights: • The deuterium permeation coefficients of CVD-SiC at 600–950 °C were evaluated. • The wraparound flow was reduced to less than 1/100th of the permeation flow. • CVD-SiC materials are very effective as hydrogen isotope permeation barriers. - Abstract: Since 2007, our group has studied the deuterium permeation and diffusion coefficients for SiC materials at temperatures above 600 °C as a means of evaluating the tritium inventory and permeation in fusion blankets. During such measurements, control and evaluation of the wraparound flow through the sample holder are important, and so the heated sample holder is enclosed by a glass tube and kept under vacuum during experimental trials. However, detailed studies regarding the required degree of vacuum based on model calculations have shown that the wraparound flow is much larger than expected, and so can affect measurements at high temperatures. We therefore modified the measurement apparatus based on calculations involving reduced pressure in the glass tube, and are now confident that the measurement error is only several percent, even at 950 °C. In this paper, recent experimental results obtained with a chemical vapor deposition (CVD)-SiC sample over the temperature range of 600–950 °C are presented, showing that the permeation coefficient for CVD-SiC is more than three orders of magnitude smaller than that for stainless steel (SS316) at 600 °C, and that at 950 °C, the coefficient for CVD-SiC is almost equal to that for SUS316 at 550 °C.

  1. PHASE CHANGES ON 4H AND 6H SIC AT HIGH TEMPERATURE OXIDATION

    Directory of Open Access Journals (Sweden)

    Jan Setiawan

    2016-10-01

    Full Text Available ABSTRACT PHASE CHANGES ON 4H AND 6H SIC AT HIGH TEMPERATURE OXIDATION. The oxidation on two silicon carbide contain 6H phase and contains 6H and 4H phases has been done.  Silicon carbide is ceramic non-oxide with excellent properties that potentially used in industry.  Silicon carbide is used in nuclear industry as structure material that developed as light water reactor (LWR fuel cladding and as a coating layer in the high temperature gas-cooled reactor (HTGR fuel.  In this study silicon carbide oxidation simulation take place in case the accident in primary cooling pipe is ruptured.  Sample silicon carbide made of powder that pressed into pellet with diameter 12.7 mm and thickness 1.0 mm, then oxidized at temperature 1000 oC, 1200 oC dan 1400 oC for 1 hour.  The samples were weighted before and after oxidized.  X-ray diffraction con-ducted to the samples using Panalytical Empyrean diffractometer with Cu as X-ray source.  Diffraction pattern analysis has been done using General Structure Analysis System (GSAS software. This software was resulting the lattice parameter changes and content of SiC phases.  The result showed all of the oxidation samples undergoes weight gain.  The 6S samples showed the highest weight change at oxidation temperature 1200 oC, for the 46S samples showed increasing tendency with the oxidation temperature.  X-ray diffraction pattern analysis showed the 6S samples contain dominan phase 6H-SiC that matched to ICSD 98-001-5325 card.  Diffraction pattern on 6S showed lattice parameter, composition and crystallite size changes.  Lattice parameters changes had smaller tendency from the model and before oxidation.  However, the lowest silicon carbide composition or the highest converted into other phases up to 66.85 %, occurred at oxidation temperature 1200 oC.  The 46S samples contains two polytypes silicon car-bide.  The 6H-SiC phases matched by ICSD 98-016-4972 card and 4H-SiC phase matched by ICSD 98

  2. 2.5 MHz Line-Width High-energy, 2 Micrometer Coherent Wind Lidar Transmitter

    Science.gov (United States)

    Petros, Mulugeta; Yu, Jirong; Trieu, Bo; Bai, Yingxin; Petzar, Paul; Singh, Upendra N.; Reithmaier, Karl

    2007-01-01

    2 micron solid-state lasers are the primary choice for coherent Doppler wind detection. As wind lidars, they are used for wake vortex and clear air turbulence detection providing air transport safety. In addition, 2 micron lasers are one of the candidates for CO2 detection lidars. The rich CO2 absorption line around 2 micron, combined with the long upper state life of time, has made Ho based 2 micron lasers a viable candidate for CO2 sensing DIAL instrument. The design and fabrication of a compact coherent laser radar transmitter for Troposphere wind sensing is under way. This system is hardened for ground as well as airborne applications. As a transmitter for a coherent wind lidar, this laser has stringent spectral line width and beam quality requirements. Although the absolute wavelength does not have to be fixed for wind detection, to maximize return signal, the output wavelength should avoid atmospheric CO2 and H2O absorption lines. The base line laser material is Ho:Tm:LuLF which is an isomorph of Ho:Tm:YLF. LuLF produces 20% more output power than Ho:Tm:YLF. In these materials the Tm absorption cross-section, the Ho emission cross-section, the Tm to Ho energy transfer parameters and the Ho (sup 5) I (sub 7) radiative life time are all identical. However, the improved performance of the LuLF is attributed to the lower thermal population in the (sup 5) I (sub 8) manifold. It also provides higher normal mode to Q-switch conversion than YLF at high pump energy indicating a lower up-conversion. The laser architecture is composed of a seed laser, a ring oscillator, and a double pass amplifier. The seed laser is a single longitudinal mode with a line width of 13 KHz. The 100mJ class oscillator is stretched to 3 meters to accommodate the line-width requirement without compromising the range resolution of the instrument. The amplifier is double passed to produce greater than 300mJ energy.

  3. Welded-Ag-nanowires/FTO conducting film with high transmittance and its application in transparent supercapacitors

    Science.gov (United States)

    Qiao, Zhensong; Yang, Xiaopeng; Liu, Feng; Duan, Guangbin; Cao, Bingqiang

    2017-03-01

    Silver nanowires (AgNW) with a small diameter were synthesized by a facile and novel polyol reduction method. Ag nanowires ink was then spun on the surface of F-doped SnO2 (FTO) to form the AgNW/FTO conducting film. Welding treatment of the AgNW/FTO conducting film not only increased the optical transmittance from 71.9 % to 79.3 % at 550 nm and decreased the sheet resistance from 11.4 ohm sq-1 to 9.8 ohm sq-1, but also improved the adhesivity of AgNW network on FTO substrate. Furthermore, MnO2 nanosheets were directly deposited on welded-AgNW/FTO (wAF) substrate to prepare a transparent MnO2/weled-AgNW/FTO (MwAF) composite electrode. The MwAF electrode displayed excellent electrochemical performance, including high specific capacitance (375 F g-1 at 5 mV s-1) and superior cycle stability (173.3 % of the initial capacitance after 20000 GCD cycles).

  4. Experimental and Numerical Examination of the Thermal Transmittance of High Performance Window Frames

    Energy Technology Data Exchange (ETDEWEB)

    Gustavsen Ph.D., Arild; Goudey, Howdy; Kohler, Christian; Arasteh P.E., Dariush; Uvslokk, Sivert; Talev, Goce; Petter Jelle Ph.D., Bjorn

    2010-06-17

    While window frames typically represent 20-30percent of the overall window area, their impact on the total window heat transfer rates may be much larger. This effect is even greater in low-conductance (highly insulating) windows which incorporate very low conductance glazings. Developing low-conductance window frames requires accurate simulation tools for product research and development. The Passivhaus Institute in Germany states that windows (glazing and frames, combined) should have U-values not exceeding 0.80 W/(m??K). This has created a niche market for highly insulating frames, with frame U-values typically around 0.7-1.0 W/(m2 cdot K). The U-values reported are often based on numerical simulations according to international simulation standards. It is prudent to check the accuracy of these calculation standards, especially for high performance products before more manufacturers begin to use them to improve other product offerings. In this paper the thermal transmittance of five highly insulating window frames (three wooden frames, one aluminum frame and one PVC frame), found from numerical simulations and experiments, are compared. Hot box calorimeter results are compared with numerical simulations according to ISO 10077-2 and ISO 15099. In addition CFD simulations have been carried out, in order to use the most accurate tool available to investigate the convection and radiation effects inside the frame cavities. Our results show that available tools commonly used to evaluate window performance, based on ISO standards, give good overall agreement, but specific areas need improvement.

  5. Switching Performance Evaluation of Commercial SiC Power Devices (SiC JFET and SiC MOSFET) in Relation to the Gate Driver Complexity

    DEFF Research Database (Denmark)

    Pittini, Riccardo; Zhang, Zhe; Andersen, Michael A. E.

    2013-01-01

    and JFETs. The recent introduction of SiC MOSFET has proved that it is possible to have highly performing SiC devices with a minimum gate driver complexity; this made SiC power devices even more attractive despite their device cost. This paper presents an analysis based on experimental results...... of the switching losses of various commercially available Si and SiC power devices rated at 1200 V (Si IGBTs, SiC JFETs and SiC MOSFETs). The comparison evaluates the reduction of the switching losses which is achievable with the introduction of SiC power devices; this includes analysis and considerations...

  6. High-energy, 2µm laser transmitter for coherent wind LIDAR

    Science.gov (United States)

    Singh, Upendra N.; Yu, Jirong; Kavaya, Michael J.; Koch, Grady J.

    2017-11-01

    A coherent Doppler lidar at 2μm wavelength has been built with higher output energy (300 mJ) than previously available. The laser transmitter is based on the solid-state Ho:Tm:LuLiF, a NASA Langley Research Center invented laser material for higher extraction efficiency. This diode pumped injection seeded MOPA has a transform limited line width and diffraction limited beam quality. NASA Langley Research Center is developing coherent wind lidar transmitter technology at eye-safe wavelength for satellite-based observation of wind on a global scale. The ability to profile wind is a key measurement for understanding and predicting atmospheric dynamics and is a critical measurement for improving weather forecasting and climate modeling. We would describe the development and performance of an engineering hardened 2μm laser transmitter for coherent Doppler wind measurement from ground/aircraft/space platform.

  7. Analysis and Design for a High Power Density Three-Phase AC Converter Using SiC Devices

    OpenAIRE

    Lai, Rixin

    2008-01-01

    The development of high power density three-phase ac converter has been a hot topic in power electronics area due to the increasing needs in applications like electric vehicle, aircraft and aerospace, where light weight and/or low volume is usually a must. Many challenges exist due to the complicated correlations in a three-phase power converter system. In addition, with the emerging SiC device technology the operating frequency of the converter can be potentially pushed to the range from ten...

  8. Structural Phase Transitions in High-Pressure Wurtzite to Rocksalt Phase in GaN and SiC

    Energy Technology Data Exchange (ETDEWEB)

    Xiao, H. Y.; Gao, Fei; Wang, Lumin M.; Zu, Xiaotao T.; Zhang, Yanwen; Weber, William J.

    2008-06-16

    Ab initio molecular dynamics simulations are employed to study the atomistic mechanisms and pathways of high-pressure phase transformation in GaN and SiC. Our simulations bring a fundamental level of understanding of the wurtzite to rocksalt phase transformation that undergoes inhomogeneous displacements via a tetragonal atomic configuration, and suggest that the transition path may be independent of the presence of d electrons on the cation in GaN. The discrepancies between experimental and theoretical studies of transition paths are discussed.

  9. Experimental study of thermo-mechanical behavior of SiC composite tubing under high temperature gradient using solid surrogate

    Energy Technology Data Exchange (ETDEWEB)

    Alva, Luis; Shapovalov, Kirill [University of South Carolina, Mechanical Engineering Department (United States); Jacobsen, George M.; Back, Christina A. [General Atomics (United States); Huang, Xinyu, E-mail: huangxin@mailbox.sc.edu [University of South Carolina, Mechanical Engineering Department (United States)

    2015-11-15

    Nuclear grade silicon carbide fiber (SiC{sub f}) reinforced silicon carbide matrix (SiC{sub m}) composite is a promising candidate material for accident tolerance fuel (ATF) cladding. A major challenge is ensuring the mechanical robustness of the ceramic cladding under accident conditions. In this work the high temperature mechanical response of a SiC{sub f}–SiC{sub m} composite tubing is studied using a novel thermo-mechanical test method. A solid surrogate tube is placed within and bonded to the SiC{sub f}–SiC{sub m} sample tube using a ceramic adhesive. The bonded tube pair is heated from the center using a ceramic glower. During testing, the outer surface temperature of the SiC sample tube rises up to 1274 K, and a steep temperature gradient develops through the thickness of the tube pair. Due to CTE mismatch and the temperature gradient, the solid surrogate tube induces high tensile stress in the SiC sample. During testing, 3D digital image correlation (DIC) method is used to map the strains on the outer surface of the SiC-composite, and acoustic emissions (AE) are monitored to detect the onset and progress of material damage. The thermo-mechanical behavior of SiC-composite sample is compared with that of monolithic SiC samples. Finite element models are developed to estimate stress–strain distribution within the tube assembly. Model predicted surface strain matches the measured surface strain using the DIC method. AE activities indicated a progressive damage process for SiC{sub f}–SiC{sub m} composite samples. For the composites tested in this study, the threshold mechanical hoop strain for matrix micro-cracking to initiate in SiC{sub f}–SiC{sub m} sample is found to be ∼300 microstrain.

  10. High-power multi-beam diode laser transmitter for a flash imaging lidar

    Science.gov (United States)

    Holmlund, Christer; Aitta, Petteri; Kivi, Sini; Mitikka, Risto; Tyni, Lauri; Heikkinen, Veli

    2013-10-01

    VTT Technical Research Centre of Finland is developing the transmitter for the "Flash Optical Sensor for TErrain Relative NAVigation" (FOSTERNAV) multi-beam flash imaging lidar. FOSTERNAV is a concept demonstrator for new guidance, navigation and control (GNC) technologies to fulfil the requirements for landing and docking of spacecraft as well as for navigation of rovers. This paper presents the design, realisation and testing of the multi-beam continuous-wave (CW) laser transmitter to be used in a 256x256 pixel flash imaging lidar. Depending on the target distance, the lidar has three operation modes using either several beams with low divergence or one single beam with a large divergence. This paper describes the transmitter part of the flash imaging lidar with focus on the electronics and especially the laser diode drivers. The transmitter contains eight fibre coupled commercial diode laser modules with a total peak optical power of 32 W at 808 nm. The main requirement for the laser diode drivers was linear modulation up to a frequency of 20 MHz allowing, for example, low distortion chirps or pseudorandom binary sequences. The laser modules contain the laser diode, a monitoring photodiode, a thermo-electric cooler, and a thermistor. The modules, designed for non-modulated and low-frequency operation, set challenging demands on the design of the drivers. Measurement results are presented on frequency response, and eye diagrams for pseudo-random binary sequences.

  11. Low-resistant and high transmittance films based on one dimensional metal-dielectric photonic band gap material

    Science.gov (United States)

    Zhao, Ya-li; Li, Xu-feng; Ma, Jiang-jiang; Ma, Fu-Hua; Chen, Zhi-Hui; Wei, Xue-hong

    2017-12-01

    The paper shows the determination of the transmission of one dimensional metal-dielectric photonic band gap materials (1D-MD PBG) theoretically and experimentally. It has been found that the location and bandwidth of transmission can be tailored by initiatively adopting a suitable structure. We proposed a special 1D-MD PBG obtained by magnetron sputtering, in which each layer of metal film is not continuous. These structures have a number of advantages such as high transmittance (55% or better), broad bandwidth (the full width at half of maximum ranges from 400 nm to 780 nm) and high electrical conductivity (the sheet resistance can be lower than 0.98 Ω/square). Meanwhile, it has been also theoretically and experimental indicated that both the light transmittance and electrical conductivity could be improved effectively by using the (pqp)N structure.

  12. Acoustic characterization of high intensity focused ultrasound field generated from a transmitter with large aperture

    Science.gov (United States)

    Fan, Tingbo; Chen, Tao; Zhang, Wei; Hu, Jimin; Zhang, Yichuan; Zhang, Dong

    2017-03-01

    A combined experiment and simulation method was utilized to characterize the acoustic field generated from a strong focused HIFU transmitter. The nonlinear sound propagation was described by the spheroidal beam equation (SBE). The relationship between the source pressure amplitude and excitation voltage was determined by fitting the measured ratio of the second harmonic to the fundamental component of the focal waveform to the simulation result; then the acoustic pressure field generated by the strong focused transducer was predicted by using the SBE model. A commercial fiber optic probe hydrophone (FOPH) was utilized to measure the acoustic pressure field generated from a 1.1 MHz HIFU transmitter with a half aperture angle of 30°. The validity of this combined approach was confirmed by the comparison between the measured results and the calculated ones. The results show that the current approach might be useful to describe the HIFU field.

  13. Micro-V covering materials with high light transmittance for solar collectors

    Energy Technology Data Exchange (ETDEWEB)

    Sonneveld, P.J.; Swinkels, G.L.A.M. [Wageningen UR, A and F (Netherlands)

    2004-07-01

    Maximal light transmittance of the covering material is important for solar collectors maximising yield of the system. Furthermore a second sheet of covering material can be applied with low light loss to increase thermal insulation. Therefore research is aimed at improving light transmission. Ray tracing method has been applied to design the optimal geometry of the material. Light transmission, thermal insulation, structural performance and yield aspects of solar collectors are combined in this research with glass as basic covering material. (orig.)

  14. Electrical Parasitics and Thermal Modeling for Optimized Layout Design of High Power SiC Modules

    DEFF Research Database (Denmark)

    Bahman, Amir Sajjad; Blaabjerg, Frede; Dutta, Atanu

    2016-01-01

    The reliability of power modules is closely depended on their electrical and thermal behavior in operation. As power modules are built to operate more integrated and faster, the electrical parasitic and thermal stress issues become more critical. This paper investigates simplified thermal...... and parasitic inductance models of SiC power modules. These models can replace the models by Finite Element Methods (FEM) to predict temperatures and electrical parasitics of power modules with much faster speed and acceptable errors and will be used for study of real operation of power modules. As a case study......, the presented models are verified by a conventional and an optimized power module layout. The optimized layout is designed based on the reduction of stray inductance and temperature in a P-cell and N-cell half-bridge module. The presented models are verified by FEM simulations and also experiment....

  15. Performance Analysis of Multiradio Transmitter with Polar or Cartesian Architectures Associated with High Efficiency Switched-Mode Power Amplifiers (invited paper

    Directory of Open Access Journals (Sweden)

    F. Robert

    2010-12-01

    Full Text Available This paper deals with wireless multi-radio transmitter architectures operating in the frequency band of 800 MHz – 6 GHz. As a consequence of the constant evolution in the communication systems, mobile transmitters must be able to operate at different frequency bands and modes according to existing standards specifications. The concept of a unique multiradio architecture is an evolution of the multistandard transceiver characterized by a parallelization of circuits for each standard. Multi-radio concept optimizes surface and power consumption. Transmitter architectures using sampling techniques and baseband ΣΔ or PWM coding of signals before their amplification appear as good candidates for multiradio transmitters for several reasons. They allow using high efficiency power amplifiers such as switched-mode PAs. They are highly flexible and easy to integrate because of their digital nature. But when the transmitter efficiency is considered, many elements have to be taken into account: signal coding efficiency, PA efficiency, RF filter. This paper investigates the interest of these architectures for a multiradio transmitter able to support existing wireless communications standards between 800 MHz and 6 GHz. It evaluates and compares the different possible architectures for WiMAX and LTE standards in terms of signal quality and transmitter power efficiency.

  16. Comparative analysis of nano-scale structural and electrical properties in AlGaN/GaN high electron mobility transistors on SiC and sapphire substrates.

    Science.gov (United States)

    Wang, Cong; Cho, Sung-Jin; Kim, Nam-Young

    2013-10-01

    A comparison of AIGaN/GaN HEMTs fabricated on both 4-in SiC and sapphire substrates was performed. Due to the high crystalline quality with one order lower dislocation density of GaN on a SiC substrate, a better two-dimensional electron gas (2DEG) mobility with high values of drain current density (780 mA/mm) and a better extrinsic transconductance (240 mS/mm) were observed. We demonstrate GaN-on-SiC HEMTs with a periphery gate width of 200 microm, exhibiting a unity-gain cut-off frequency (f(T)) = 29.6 GHz, a maximum frequency of oscillation (f(MAX)) = 63.2 GHz, and an output power density of 6.4 W/mm with a 55% power added efficiency (PAE) at 10 GHz. A surface roughness of 0.828 nm and 1.025 nm and an X-ray diffraction (XRD) GaN (0002) full-width at half-maximum (FWHM) of 120 s and 919 s were measured for the SiC and sapphire-based AIGaN/GaN HEMTs, respectively. The SiC substrate has been shown to be an optimal solution for fabricating HEMTs for X-band high-power applications, which require excellent performances.

  17. High efficiency of transmittance and electrical conductivity of V doped ZnO used in solar cells applications

    Energy Technology Data Exchange (ETDEWEB)

    Boujnah, M., E-mail: boujnah.mourad@gmail.com [Laboratory of Magnetism and Physics of High Energies, Department of Physics, B.P. 1014, Faculty of Sciences, Mohammed V University, Rabat (Morocco); Boumdyan, M. [Laboratory of Magnetism and Physics of High Energies, Department of Physics, B.P. 1014, Faculty of Sciences, Mohammed V University, Rabat (Morocco); Naji, S. [Department of Physics, Faculty of Sciences, Ibb University, Ibb (Yemen); Benyoussef, A.; El Kenz, A.; Loulidi, M. [Laboratory of Magnetism and Physics of High Energies, Department of Physics, B.P. 1014, Faculty of Sciences, Mohammed V University, Rabat (Morocco)

    2016-06-25

    The full-potential linearized augmented plane wave method (FP-LAPW) based on the density functional theory (DFT) and Boltzmann's Transport theory, are employed to investigate theoretically the electronic structure, optical and electrical properties of vanadium -doped wurtzite ZnO with different concentrations (3.125%, 6.25%, 12.5%, 25%). The FP-LAPW based on the new potential approximation known as the Tran-Blaha modified Becke–Johnson exchange potential approximation (mBJ) was also applied with the primary goal of improving the electronic structure description specially the band gap energy. The calculated band structure and density of states (DOS) exhibit a band gap of pure ZnO (3.3 eV) closer to the experimental one. As well, our results indicate that the average transmittance in the 400–1000 nm wavelength region was 93%. We found that Zn{sub 96.875}V{sub 3.125}O is the optimized composition of the V doped ZnO, which has the highest conductivity (3.2 × 10{sup 3} (Ωcm){sup −1}) and transmittance. The high transmittance and electrical conductivity indicate that hexagonal V:ZnO system is a potential as material for solar energy applications. - Highlights: • We investigate theoretically the physical properties of V-doped wurtzite ZnO. • We used density functional calculations (DFT) and Boltzmann's Transport theory. • We examined the optical and electrical properties of different percentage of V doped ZnO.

  18. A Novel WPT System Based on Dual Transmitters and Dual Receivers for High Power Applications: Analysis, Design and Implementation

    Directory of Open Access Journals (Sweden)

    Yong Li

    2017-02-01

    Full Text Available Traditional Wireless Power Transfer (WPT systems only have one energy transmission path, which can hardly meet the power demand for high power applications, e.g., railway applications (electric trains and trams, etc. due to the capacity constraints of power electronic devices. A novel WPT system based on dual transmitters and dual receivers is proposed in this paper to upgrade the power capacity of the WPT system. The reliability and availability of the proposed WPT system can be dramatically improved due to the four energy transmission paths. A three-dimensional finite element analysis (FEA tool ANSYS MAXWELL (ANSYS, Canonsburg, PA, USA is adopted to investigate the proposed magnetic coupling structure. Besides, the effects of the crossing coupling mutual inductances among the transmitters and receivers are analyzed. It shows that the same-side cross couplings will decrease the efficiency and transmitted power. Decoupling transformers are employed to mitigate the effects of the same-side cross couplings. Meanwhile, the output voltage in the secondary side can be regulated at its designed value with a fast response performance, and the system can continue work even with a faulty inverter. Finally, a scale-down experimental setup is provided to verify the proposed approach. The experimental results indicate that the proposed method could improve the transmitted power capacity, overall efficiency and reliability, simultaneously. The proposed WPT structure is a potential alternative for high power applications.

  19. High Quality, Low-Scatter SiC Optics Suitable for Space-based UV & EUV Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG Precision Optronics proposes the development and demonstration of a new optical fabrication process for the production of EUV quality Silicon Carbide (SiC)...

  20. High Quality, Low-Scatter SiC Optics Suitable for Space-based UV & EUV Applicati Project

    Data.gov (United States)

    National Aeronautics and Space Administration — SSG Precision Optronics proposes the development of a novel optical manufacturing process that will allow the production of state-of-the-art Silicon Carbide (SiC)...

  1. Azimuth-Variant Signal Processing in High-Altitude Platform Passive SAR with Spaceborne/Airborne Transmitter

    Directory of Open Access Journals (Sweden)

    Huaizong Shao

    2013-03-01

    Full Text Available High-altitude platforms (HAP or near-space vehicle offers several advantages over current low earth orbit (LEO satellite and airplane, because HAP is not constrained by orbital mechanics and fuel consumption. These advantages provide potential for some specific remote sensing applications that require persistent monitoring or fast-revisiting frequency. This paper investigates the azimuth-variant signal processing in HAP-borne bistatic synthetic aperture radar (BiSAR with spaceborne or airborne transmitter for high-resolution remote sensing. The system configuration, azimuth-variant Doppler characteristics and two-dimensional echo spectrum are analyzed. Conceptual system simulation results are also provided. Since the azimuth-variant BiSAR geometry brings a challenge for developing high precision data processing algorithms, we propose an image formation algorithm using equivalent velocity and nonlinear chirp scaling (NCS to address the azimuth-variant signal processing problem. The proposed algorithm is verified by numerical simulation results.

  2. Performance Evaluation of an Automotive-Grade, High Speed Gate Driver for SiC FETs, Type UCC27531, Over a Wide Temperature Range

    Science.gov (United States)

    Boomer, Kristen; Hammoud, Ahmad

    2015-01-01

    Silicon carbide (SiC) devices are becoming widely used in electronic power circuits as replacement for conventional silicon parts due to their attractive properties that include low on-state resistance, high temperature tolerance, and high frequency operation. These attributes have a significant impact by reducing system weight, saving board space, and conserving power. In this work, the performance of an automotive-grade high speed gate driver with potential use in controlling SiC FETs (field-Effect Transistors) in converters or motor control applications was evaluated under extreme temperatures and thermal cycling. The investigations were carried out to assess performance and to determine suitability of this device for use in space exploration missions under extreme temperature conditions.

  3. Ab initio investigation of the electronic structure and bonding properties of the layered ternary compound Ti sub 3 SiC sub 2 at high pressure

    CERN Document Server

    Wang, J Y

    2003-01-01

    The pressure dependences of the lattice parameters, electronic structure, and bonding properties of the layered ternary compound Ti sub 3 SiC sub 2 were investigated by performing ab initio plane-wave pseudopotential total energy calculations. The material exhibited elastic anisotropy. The lattice constants and axial ratio were studied for different pressures, and the same trend was obtained as is measured in experiment. It was found that although the structure was stable at high pressure, the electronic structure and atomic bonding were definitely affected. The electrical conductivity was predicted to reduce with pressure, which was interpreted by analysing the band dispersion curve and density of states at the Fermi level. The strengths of the atomic bonds in Ti sub 3 SiC sub 2 were considered by analysing the Mulliken population and by examining the bond length contraction for various pressures. A redistribution of charge density that accompanied high pressures was also revealed.

  4. SiC Matrix Composites for High Temperature Hypersonic Vehicle Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Durable high temperature materials are required for hypersonic engine and structural thermal protection systems. In particular, 2700:F or greater capable structural...

  5. SiC Matrix Composites for High Temperature Hypersonic Vehicle Applications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Durable high temperature materials are required for reusable hypersonic structural thermal protection systems. In particular, temperatures exceeding 2700:F, and...

  6. A High Power Boost Converter for PV Systems Operating up to 300 kHz using SiC Devices

    DEFF Research Database (Denmark)

    Anthon, Alexander; Zhang, Zhe; Andersen, Michael A. E.

    2014-01-01

    In this paper, a 3kW boost converter for PV applications using SiC devices is introduced. Main focus is to operate the converter over a wide range of switching frequency and to analyze the main loss distributors as well as the efficiency. The switching element is a recently introduced normally...

  7. Abnormal Transient Liquid Phase Bondability of High-Volume Fraction SiC Particle-Reinforced A356 Composite for Cu Interlayer and the Interlayer Improvement Routes

    Science.gov (United States)

    Zhang, Guifeng; Wei, Zhongxin; Chen, Biqiang; Chen, Bo

    2017-12-01

    Features of transient liquid phase (TLP) bondability of high-volume fraction (70 vol.%) SiC particle-reinforced A356 composite for popular Cu interlayer were investigated. Although Cu foil was melted, molten Cu was completely expulsed, indicating that the numerous SiC particles significantly deteriorated wettability not only at particle/braze metal (P/M) interface, but also at the matrix/braze metal (M/M) interface. For the reason of poor wettability at P/M interface, a model showing there is a "window period" for actual wetting reaction (allowing liquid phase to be in contact with surficial SiC particles) much shorter than nominal isothermal solidification time during TLP bonding of the composite containing sintered ceramic preform was proposed. For the poor wettability at M/M interface, both size effect of too small matrix unit (2 20 μm) and restraint effect of the rigid porous ceramic preform on suppressing oxide film crack on the small matrix unit surface were proposed. Thus, chemical route to disrupt oxide film on the small matrix unit surface should be preferred in braze composition design. For example, Al-27Cu-5Si-2Mg-1Ti braze was developed by co-addition of Mg and Ti to improve wettability and to in situ reinforce bond seam, respectively; Ti also could remedy Mg loss for improving wettability.

  8. In-situ formation of SiC nanocrystals by high temperature annealing of SiO2/Si under CO: A photoemission study

    Science.gov (United States)

    D'angelo, M.; Deokar, G.; Steydli, S.; Pongrácz, A.; Pécz, B.; Silly, M. G.; Sirotti, F.; Cavellin, C. Deville

    2012-04-01

    We have studied CO interaction with SiO2/Si system at high temperature (~ 1100 °C) and 350 mbar by core-level photoemission. Even for short annealing time (5 min) the signal from Si2p and C1s core levels shows a clear change upon CO treatment. Shifted components are attributed to formation of SiC. This is confirmed by TEM imaging which further shows that the silicon carbide is in the form of nano-crystals of the 3C polytype. Photoemission spectroscopy moreover reveals the formation of silicon oxicarbide which could not be evidenced by other methods. Combining these results with previous Nuclear Resonance Profiling study gives a deeper insight into the mechanisms involved in the nanocrystals growth and especially for the reaction equation leading to SiC formation. We show that CO diffuses as a molecule through the silica layer and reacts with the silicon substrate according the following reaction: 4 CO + 4 Si → SiO2 + 2SiC + SiO2C2.

  9. High energy 2-micron solid-state laser transmitter for NASA's airborne CO2 measurements

    Science.gov (United States)

    Singh, Upendra N.; Yu, Jirong; Petros, Mulugeta; Bai, Yingxin

    2017-11-01

    A 2-micron pulsed, Integrated Path Differential Absorption (IPDA) lidar instrument for ground and airborne atmospheric CO2 concentration measurements via direct detection method is being developed at NASA Langley Research Center. This instrument will provide an alternate approach to measure atmospheric CO2 concentrations with significant advantages. A high energy pulsed approach provides high precision measurement capability by having high signal-to-noise level and unambiguously eliminates the contamination from aerosols and clouds that can bias the IPDA measurement.

  10. High-frequency noise characterization of graphene field effect transistors on SiC substrates

    Science.gov (United States)

    Yu, C.; He, Z. Z.; Song, X. B.; Liu, Q. B.; Dun, S. B.; Han, T. T.; Wang, J. J.; Zhou, C. J.; Guo, J. C.; Lv, Y. J.; Cai, S. J.; Feng, Z. H.

    2017-07-01

    Considering its high carrier mobility and high saturation velocity, a low-noise amplifier is thought of as being the most attractive analogue application of graphene field-effect transistors. The noise performance of graphene field-effect transistors at frequencies in the K-band remains unknown. In this work, the noise parameters of a graphene transistor are measured from 10 to 26 GHz and noise models are built with the data. The extrinsic minimum noise figure for a graphene transistor reached 1.5 dB, and the intrinsic minimum noise figure was as low as 0.8 dB at a frequency of 10 GHz, which were comparable with the results from tests on Si CMOS and started to approach those for GaAs and InP transistors. Considering the short development time, the current results are a significant step forward for graphene transistors and show their application potential in high-frequency electronics.

  11. High Efficiency and Power Laser Transmitter for Deep Space Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this program, Freedom Photonics will design an innovative compact, diode laser pumped solid state laser to achieve specifications listed by the program. High...

  12. High Energy, Single-Mode, All-Solid-State and Tunable UV Laser Transmitter

    Science.gov (United States)

    Prasad, Narasimha S.; Singh, Upendra N.; Hovis, FLoyd

    2007-01-01

    A high energy, single mode, all solid-state Nd:YAG laser primarily for pumping an UV converter is developed. Greater than 1 J/pulse at 50 HZ PRF and pulse widths around 22 ns have been demonstrated. Higher energy, greater efficiency may be possible. Refinements are known and practical to implement. Technology Demonstration of a highly efficient, high-pulse-energy, single mode UV wavelength generation using flash lamp pumped laser has been achieved. Greater than 90% pump depletion is observed. 190 mJ extra-cavity SFG; IR to UV efficiency > 21% (> 27% for 1 mJ seed). 160 mJ intra-cavity SFG; IR to UV efficiency up to 24% Fluence laser is being refined to match or exceed the above UV converter results. Currently the Nd:YAG pump laser development is a technology demonstration. System can be engineered for compact packaging.

  13. Novel High Temperature Capacitive Pressure Sensor Utilizing SiC Integrated Circuit Twin Ring Oscillators

    Science.gov (United States)

    Scardelletti, M.; Neudeck, P.; Spry, D.; Meredith, R.; Jordan, J.; Prokop, N.; Krasowski, M.; Beheim, G.; Hunter, G.

    2017-01-01

    This paper describes initial development and testing of a novel high temperature capacitive pressure sensor system. The pressure sensor system consists of two 4H-SiC 11-stage ring oscillators and a SiCN capacitive pressure sensor. One oscillator has the capacitive pressure sensor fixed at one node in its feedback loop and varies as a function of pressure and temperature while the other provides a pressure-independent reference frequency which can be used to temperature compensate the output of the first oscillator. A two-day repeatability test was performed up to 500C on the oscillators and the oscillator fundamental frequency changed by only 1. The SiCN capacitive pressure sensor was characterized at room temperature from 0 to 300 psi. The sensor had an initial capacitance of 3.76 pF at 0 psi and 1.75 pF at 300 psi corresponding to a 54 change in capacitance. The integrated pressure sensor system was characterized from 0 to 300 psi in steps of 50 psi over a temperature range of 25 to 500C. The pressure sensor system sensitivity was 0.113 kHzpsi at 25C and 0.026 kHzpsi at 500C.

  14. High SBS-Threshold Er/Yb Co-Doped Phosphate Glass Fiber Amplifiers for High Power, Sub-us Pulsed, Narrow Linewidth, All Fiber-Based Laser Transmitter Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In order to implement the monolithic high power narrow linewidth pulsed all fiber-based laser transmitter by using a MOPA configuration for NASA's active remote...

  15. The 120Gbps VCSEL Array Based Optical Transmitter (ATx) development for the High-Luminosity LHC (HL-LHC) experiments

    Science.gov (United States)

    Guo, D.; Liu, C.; Chen, J.; Chramowicz, J.; Deng, B.; Gong, D.; Hou, S.; Jin, G.; Kwan, S.; Liang, F.; Li, X.; Liu, G.; Liu, T.; Prosser, A.; Su, D.-S.; Teng, P.-K.; Xu, T.; Ye, J.; Zhao, X.; Xiang, A. C.; Liang, H.

    2014-02-01

    The integration of a Verticle Cavity Surface-Emitting Laser (VCSEL) array and a driving Application-Specific Integrated Circuit (ASIC) in a custom optical array transmitter module (ATx) for operation in the detector front-end is constructed, assembled and tested. The ATx provides 12 parallel channels with each channel operating at 10 Gbps. The optical transmitter eye diagram passes the eye mask and the bit-error rate (BER) less than 10-12 transmission is achieved at 10 Gbps/ch. The overall insertion loss including the radiation induced attenuation is sufficiently low to meet the proposed link budget requirement.

  16. Interconnects, Transmitters, and Receivers

    Science.gov (United States)

    Hoefflinger, Bernd

    Interconnects on-chip between transistors and between functions like processors and memories, between chips on carriers or in stacks, and the communication with the outside world have become a highly complex performance, reliability, cost, and energy challenge. Twelve layers of metal interconnects, produced by lithography, require, including the contact vias, 24 mask and process cycles on top of the process front-end. The resulting lines are associated with resistance, capacitance and inductance parasitics as well as with ageing due to high current densities. Large savings in wiring lengths are achieved with 3D integration: transistor stacking, chip stacking and TSV's, a direction, which has exploded since 2005 because of many other benefits and, at the same time, with sensitive reliability and cost issues. On top of this or as an alternative, non-contact interconnects are possible with capacitive or inductive coupling. Inductive in particular has proven to be attractive because its transmission range is large enough for communication in chip stacks and yet not too large to cause interference.Optical transmitters based on integrated III-V compound-semiconductor lasers and THz power amplifiers compete with ascending low-cost, parallel-wire transmitters based on BiCMOS technologies. Parallel mm-wave and THz transceiver arrays enable mm-wave radar for traffic safety and THz computed-tomography. In spite of all these technology advances, the power efficiency of data communication will only improve 100× in a decade. New compression and architectural techniques are in high demand.

  17. SiC Power MOSFET with Improved Gate Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sbrockey, Nick M; Tompa, Gary S; Spencer, Michael G; Chandrashekhar, Chandra MVS

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  18. Fracture Mechanisms For SiC Fibers And SiC/SiC Composites Under Stress-Rupture Conditions at High Temperatures

    Science.gov (United States)

    DiCarlo, James A.; Yun, Hee Mann; Hurst, Janet B.; Viterna, L. (Technical Monitor)

    2002-01-01

    The successful application of SiC/SiC ceramic matrix composites as high-temperature structural materials depends strongly on maximizing the fracture or rupture life of the load-bearing fiber and matrix constituents. Using high-temperature data measured under stress-rupture test conditions, this study examines in a mechanistic manner the effects of various intrinsic and extrinsic factors on the creep and fracture behavior of a variety of SiC fiber types. It is shown that although some fiber types fracture during a large primary creep stage, the fiber creep rate just prior to fracture plays a key role in determining fiber rupture time (Monkman-Grant theory). If it is assumed that SiC matrices rupture in a similar manner as fibers with the same microstructures, one can develop simple mechanistic models to analyze and optimize the stress-rupture behavior of SiC/SiC composites for applied stresses that are initially below matrix cracking.

  19. Research on SiC Whisker Prepared by H-PSO

    Directory of Open Access Journals (Sweden)

    WANG Yao

    2017-10-01

    Full Text Available SiC whiskers were prepared on the matrix of graphite by using high hydrogenous silicone oil(PSO as raw material. The effect of surface conditions of graphite and heating temperature on the growth of SiC whisker was mainly studied in this paper. The main factor which affects the nucleation and growth of SiC whisker is the heating temperature, with the heating temperature rising, the production of SiC whisker increases. The surface condition of graphite matrix also influences the growth of SiC whisker. With the nucleation points provided by graphite matrix defects increasing, the production of SiC whisker incleases and SiC whisker starts to overlap with each other. The formation process of SiC whisker includes two steps:nucleation and growth. SiC whisker nucleates at low temperature and grows at high temperature, which follows the VLS (vapor-liquid-solid growth mechanism.

  20. Facile and Low-Temperature Fabrication of Thermochromic Cr2O3/VO2 Smart Coatings: Enhanced Solar Modulation Ability, High Luminous Transmittance and UV-Shielding Function.

    Science.gov (United States)

    Chang, Tianci; Cao, Xun; Li, Ning; Long, Shiwei; Gao, Xiang; Dedon, Liv R; Sun, Guangyao; Luo, Hongjie; Jin, Ping

    2017-08-09

    In the pursuit of energy efficient materials, vanadium dioxide (VO2) based smart coatings have gained much attention in recent years. For smart window applications, VO2 thin films should be fabricated at low temperature to reduce the cost in commercial fabrication and solve compatibility problems. Meanwhile, thermochromic performance with high luminous transmittance and solar modulation ability, as well as effective UV shielding function has become the most important developing strategy for ideal smart windows. In this work, facile Cr2O3/VO2 bilayer coatings on quartz glasses were designed and fabricated by magnetron sputtering at low temperatures ranging from 250 to 350 °C as compared with typical high growth temperatures (>450 °C). The bottom Cr2O3 layer not only provides a structural template for the growth of VO2 (R), but also serves as an antireflection layer for improving the luminous transmittance. It was found that the deposition of Cr2O3 layer resulted in a dramatic enhancement of the solar modulation ability (56.4%) and improvement of luminous transmittance (26.4%) when compared to single-layer VO2 coating. According to optical measurements, the Cr2O3/VO2 bilayer structure exhibits excellent optical performances with an enhanced solar modulation ability (ΔTsol = 12.2%) and a high luminous transmittance (Tlum,lt = 46.0%), which makes a good balance between ΔTsol and Tlum for smart windows applications. As for UV-shielding properties, more than 95.8% UV radiation (250-400 nm) can be blocked out by the Cr2O3/VO2 structure. In addition, the visualized energy-efficient effect was modeled by heating a beaker of water using infrared imaging method with/without a Cr2O3/VO2 coating glass.

  1. Development of Sic Gas Sensor Systems

    Science.gov (United States)

    Hunter, G. W.; Neudeck, P. G.; Okojie, R. S.; Beheim, G. M.; Thomas, V.; Chen, L.; Lukco, D.; Liu, C. C.; Ward, B.; Makel, D.

    2002-01-01

    Silicon carbide (SiC) based gas sensors have significant potential to address the gas sensing needs of aerospace applications such as emission monitoring, fuel leak detection, and fire detection. However, in order to reach that potential, a range of technical challenges must be overcome. These challenges go beyond the development of the basic sensor itself and include the need for viable enabling technologies to make a complete gas sensor system: electrical contacts, packaging, and transfer of information from the sensor to the outside world. This paper reviews the status at NASA Glenn Research Center of SiC Schottky diode gas sensor development as well as that of enabling technologies supporting SiC gas sensor system implementation. A vision of a complete high temperature microfabricated SiC gas sensor system is proposed. In the long-term, it is believed that improvements in the SiC semiconductor material itself could have a dramatic effect on the performance of SiC gas sensor systems.

  2. Synthesis of SiC decorated carbonaceous nanorods and its hierarchical composites Si@SiC@C for high-performance lithium ion batteries

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Chundong [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China); Ostrikov, Kostya [School of Chemistry, Physics and Mechanical Engineering, Queensland University of Technology, Brisbane, Queensland 4000 (Australia); Plasma Nanoscience, Industrial Innovation Program, CSIRO Manufacturing Flagship, Lindfield, New South Wales 2070 (Australia); Yang, Yonggang [College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Wenjun, E-mail: apwjzh@cityu.edu.hk [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR (China)

    2015-10-15

    SiC- based nanomaterials possess superior electric, thermal and mechanical properties. However, due to the tricky synthesis process, which needs to be carried out under high temperature with multi-step reaction procedures, the further application is dramatically limited. Herein, a simple as well as a controllable approach is proposed for synthesis of SiC- based nanostructures under low temperature. Phenyl-bridged polysilsesquioxane was chosen as the starting material to react with magnesium at 650 °C, following which SiC@C nanocomposites were finally obtained, and it maintains the original bent rod-like architecture of polysilsesquioxanes. The possible formation process for the nanocomposites can proposed as well. The electrochemical behaviour of nanocomposites was accessed, verifying that the synthesized SiC@C nanocomposites deliver good electrochemical performance. Moreover, SiC@C also shows to be a promising scaffold in supporting Si thin film electrode in achieving stable cycling performance in lithium ion batteries. - Highlights: • SiC@C bent nanorods were synthesized with a magnesium reaction approach. • Carbon nanorod spines studded with ultrafine β-SiC nanocrystallines was realized. • The synthesized SiC@C keeps the original rod-like structure of polysilsesquioxanes. • The possible formation process for the nanocomposites was analysed and proposed. • Si@SiC@C nanocomposites reveal good electrochemical performance in LIBs.

  3. Highly perfect thin films of SiC: X-ray double crystal diffractometry and X-ray double crystal topographic study

    Energy Technology Data Exchange (ETDEWEB)

    Chaudhuri, J.; Cheng, X. [Wichita State Univ., KS (United States). Dept. of Mechanical Engineering; Yuan, C. [Emcore Corp., Somerset, NJ 08873 (United States); Steckl, A.J. [Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Cincinnati, Cincinnati, OH 45221-0030 (United States)

    1997-01-05

    The structure, strain and defect density of SiC thin films epitaxially deposited on 6H-SiC (0001), Si(111) and Si(001) from the single-source organosilane precursor silacyclobutane (c-C{sub 3}H{sub 6}SiH{sub 2}) were determined by X-ray double crystal diffractometry and topographic methods. All the films grown on Si were found to be 3C-SiC type. The films grown on 6H-SiC (0001) at 800 to 1000 C were found to be 3C-SiC type, whereas the films grown on 6H-SiC (0001) at 1100 C were a mixture of 3C, 4H and 6H polytypes of SiC. All the films grown on Si had very high defect densities. However, the defect density was reduced by a factor of 10{sup 4} for the films of similar thickness on 6H-SiC (0001), with the film grown at 900 C being the optimum one exhibiting structural properties nearly equal to those of the substrate. (orig.) 35 refs.

  4. Advances in high-energy solid-state 2-micron laser transmitter development for ground and airborne wind and CO2 measurements

    Science.gov (United States)

    Singh, Upendra N.; Yu, Jirong; Petros, Mulugeta; Chen, Songsheng; Kavaya, Michael J.; Trieu, Bo; Bai, Yingxin; Petzar, Paul; Modlin, Edward A.; Koch, Grady; Beyon, Jeffrey

    2010-10-01

    Sustained research efforts at NASA Langley Research Center (LaRC) during last fifteen years have resulted in a significant advancement in 2-micron diode-pumped, solid-state laser transmitter for wind and carbon dioxide measurement from ground, air and space-borne platform. Solid-state 2-micron laser is a key subsystem for a coherent Doppler lidar that measures the horizontal and vertical wind velocities with high precision and resolution. The same laser, after a few modifications, can also be used in a Differential Absorption Lidar (DIAL) system for measuring atmospheric CO2 concentration profiles. Researchers at NASA Langley Research Center have developed a compact, flight capable, high energy, injection seeded, 2-micron laser transmitter for ground and airborne wind and carbon dioxide measurements. It is capable of producing 250 mJ at 10 Hz by an oscillator and one amplifier. This compact laser transmitter was integrated into a mobile trailer based coherent Doppler wind and CO2 DIAL system and was deployed during field measurement campaigns. This paper will give an overview of 2- micron solid-state laser technology development and discuss results from recent ground-based field measurements.

  5. Advances in High Energy Solid-State 2-micron Laser Transmitter Development for Ground and Airborne Wind and CO2 Measurements

    Science.gov (United States)

    Singh, Upendra N.; Yu, Jirong; Petros, Mulugeta; Chen, Songsheng; Kavaya, Michael J.; Trieu, Bo; Bai, Yingxin; Petzar, Paul; Modlin, Edward A.; Koch, Grady; hide

    2010-01-01

    Sustained research efforts at NASA Langley Research Center (LaRC) during last fifteen years have resulted in a significant advancement in 2-micron diode-pumped, solid-state laser transmitter for wind and carbon dioxide measurement from ground, air and space-borne platform. Solid-state 2-micron laser is a key subsystem for a coherent Doppler lidar that measures the horizontal and vertical wind velocities with high precision and resolution. The same laser, after a few modifications, can also be used in a Differential Absorption Lidar (DIAL) system for measuring atmospheric CO2 concentration profiles. Researchers at NASA Langley Research Center have developed a compact, flight capable, high energy, injection seeded, 2-micron laser transmitter for ground and airborne wind and carbon dioxide measurements. It is capable of producing 250 mJ at 10 Hz by an oscillator and one amplifier. This compact laser transmitter was integrated into a mobile trailer based coherent Doppler wind and CO2 DIAL system and was deployed during field measurement campaigns. This paper will give an overview of 2-micron solid-state laser technology development and discuss results from recent ground-based field measurements.

  6. In Situ Stringing of Metal Organic Frameworks by SiC Nanowires for High-Performance Electromagnetic Radiation Elimination.

    Science.gov (United States)

    Zhang, Kun; Wu, Fan; Xie, Aming; Sun, Mengxiao; Dong, Wei

    2017-09-27

    The design of novel hybrid nanostructures has been seen as an effective route to tune the properties of materials. Herein, we provide an in situ growth strategy to efficiently construct kebab-like hybrids, which are composed of one-dimensional SiC nanowires stringing polyhedral metal organic frameworks (MOFs). Through a heat-treatment process regardless of under air or argon, these hybrids generate an excellent electromagnetic absorption (EMA) ability. We comprehensively explored the growth and calcination process of these hybrids as well as their EMA enhanced mechanism. The results indicate that the MOFs kept as shrunken polyhedrons under air but decomposed to small particles under argon, due to the different calcination mechanism. In addition, the enhanced EMA ability should be attributed to the combined influences of the reduced dielectric constant, enlarged aspect ratio, and enhanced interface polarization. This research opens up the rational designs and applications of novel materials by the hybridizing of nanomaterials in multidimensions.

  7. Examination of the Atomic Pair Distribution Function (PDF) of SiC Nanocrystals by In-situ High Pressure Diffraction

    Science.gov (United States)

    Grzanka, E.; Stelmakh, S.; Gierlotka, S.; Zhao, Y.; Palosz, B.; Palosz, W.

    2003-01-01

    Key properties of nanocrystals are determined by their real atomic structure, therefore a reasonable understanding and meaningful interpretation of their properties requires a realistic model of the structure. In this paper we present an evidence of a complex response of the lattice distances to external pressure indicating a presence of a complex structure of Sic nanopowders. The experiments were performed on nanocrystalline Sic subjected to hydrostatic or isostatic pressure using synchrotron and neutron powder diffraction. Elastic properties of the samples were examined based on X-ray diffraction data using a Diamond Anvil Cell (DAC) in HASYLAB at DESY. The dependence'of the lattice parameters and of the Bragg reflections width with pressure exhibits a ha1 nature of the properties (compressibilities) of the powders and indicates a complex structure of the grains. We interpreted tws behaviour as originating from different elastic properties of the grain interior and surface. Analysis of the dependence of individual interatomic distances on pressure was based on in-situ neutron diffraction measurements done with HbD diffractometer at LANSCE in Los Alamos National Laboratory with the Paris-Edinburgh cell under pressures up to 8 GPa (Qmax = 26/A). Interatomic distances were obtained by PDF analysis using the PDFgetN program. We have found that the interatomic distances undergo a complex, non-monotonic changes. Even under substantial pressures a considerable relaxation of the lattice may take place: some interatomic distances increase with an increase in pressure. We relate this phenomenon to: (1), changes of the microstructure of the densified material, in particular breaking of its fractal chain structure and, (2), its complex structure resembling that of a material composed of two phases, each with its distinct elastic properties.

  8. 5.8kV SiC PiN Diode for Switching of High-Efficiency Inductive Pulsed Plasma Thruster Circuits

    Science.gov (United States)

    Toftul, Alexandra; Polzin, Kurt A.; Hudgins, Jerry L.

    2014-01-01

    Inductive Pulsed Plasma Thruster (IPPT) pulse circuits, such as those needed to operate the Pulsed Inductive Thruster (PIT), are required to quickly switch capacitor banks operating at a period of µs while conducting current at levels on the order of at least 10 kA. [1,2] For all iterations of the PIT to date, spark gaps have been used to discharge the capacitor bank through an inductive coil. Recent availability of fast, high-power solid state switching devices makes it possible to consider the use of semiconductor switches in modern IPPTs. In addition, novel pre-ionization schemes have led to a reduction in discharge energy per pulse for electric thrusters of this type, relaxing the switching requirements for these thrusters. [3,4] Solid state switches offer the advantage of greater controllability and reliability, as well as decreased drive circuit dimensions and mass relative to spark gap switches. The use of solid state devices such as Integrated Gate Bipolar Transistors (IGBTs), Gate Turn-off Thyristors (GTOs) and Silicon-Controlled Rectifiers (SCRs) often involves the use of power diodes. These semiconductor devices may be connected antiparallel to the switch for protection from reverse current, or used to reduce power loss in a circuit by clamping off current ringing. In each case, higher circuit efficiency may be achieved by using a diode that is able to transition, or 'switch,' from the forward conducting state ('on' state) to the reverse blocking state ('off' state) in the shortest amount of time, thereby minimizing current ringing and switching losses. Silicon Carbide (SiC) PiN diodes offer significant advantages to conventional fast-switching Silicon (Si) diodes for high power and fast switching applications. A wider band gap results in a breakdown voltage 10 times that of Si, so that a SiC device may have a thinner drift region for a given blocking voltage. [5] This leads to smaller, lighter devices for high voltage applications, as well as reduced

  9. Pulsed-laser-deposited AlN films for high-temperature SiC MIS devices[Metal-Insulator-Semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Vispute, R.D.; Patel, A.; Baynes, K. [and others

    2000-07-01

    The authors report on the fabrication of device-quality AlN heterostructures grown on SiC for high-temperature electronic devices. The AlN films were grown by pulsed laser deposition (PLD) at substrate temperatures ranging from 25 C (room temperature) to 1000 C. The as-grown films were investigated using x-ray diffraction, Rutherford backscattering spectroscopy, ion channeling, atomic force microscopy, and transmission electron microscopy. The AlN films grown above 700 C were highly c-axis oriented with rocking curve FWHM of 5 to 6 arc-min. The ion channeling minimum yields near the surface region for the AlN films were {approximately}2 to 4%, indicating their high degree of crystallinity. TEM studies indicated that AlN films were epitaxial and single crystalline in nature with a large number of stacking faults as a result of lattice mismatch and growth induced defects. The surface roughness for the films was about 0.5 nm, which is close to the unit cell height of the AlN. Epitaxial TiN ohmic contacts were also developed on SiC, GaN, and AlN by in-situ PLD. Epitaxial TiN/AlN/SiC MIS capacitors with gate areas of 4 {sup {minus}} 10{sup {minus}4} cm{sup 2} were fabricated, and high-temperature current-voltage (I-V) characteristics were studied up to 450 C. The authors have measured leakage current densities of low 10{sup {minus}8} A/cm{sup 2} at room temperature, and have mid 10{sup {minus}3} A/cm{sup 2} at 450 C under a field of 2 MV/cm.

  10. Advances in wide bandgap SiC for optoelectronics

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    2014-01-01

    Silicon carbide (SiC) has played a key role in power electronics thanks to its unique physical properties like wide bandgap, high breakdown field, etc. During the past decade, SiC is also becoming more and more active in optoelectronics thanks to the progress in materials growth and nanofabrication...

  11. Spectral transmittance reference standards

    Energy Technology Data Exchange (ETDEWEB)

    Kruglyakova, M.A.; Belyaeva, O.N.; Nikitin, M.V.

    1995-06-01

    This paper presents spectral transmittance reference standards for UV and IR spectrophotometers, developed, studied, and certified by a precision spectrophotometry laboratory (the RSP Complex). 8 refs., 3 figs., 3 tabs.

  12. Integrated SiC Super Junction Transistor-Diode Devices for High-Power Motor Control ModulesOoperating at 500 C Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Monolithic Integrated SiC Super Junction Transistor-JBS diode (MIDSJT) devices are used to construct 500

  13. A High-Speed Four-Transmitter Four-Receiver MIMO OFDM Testbed: Experimental Results and Analyses

    Directory of Open Access Journals (Sweden)

    Walkenhorst Brett

    2006-01-01

    Full Text Available By adopting multiple-input multiple-output (MIMO and orthogonal frequency-division multiplexing (OFDM technologies, indoor wireless systems could reach data rates up to several hundreds of Mbits/s and achieve spectral efficiencies of several tens of bits/Hz/s, which are unattainable for conventional single-input single-output systems. The enhancements of data rate and spectral efficiency come from the fact that MIMO and OFDM schemes are indeed parallel transmission technologies in the space and frequency domains, respectively. To validate the functionality and feasibility of MIMO and OFDM technologies, we set up a four-transmitter four-receiver OFDM testbed in a typical indoor environment, which achieves a peak data rate of 525 Mbits/s and a spectral efficiency of 19.2 bits/Hz/s. The performances including MIMO channel characteristics, bit-error rate against signal-to-noise ratio curves, the impairments of carrier frequency offset and channel estimation inaccuracy, and an asymmetric MIMO scheme are reported and analyzed in this paper.

  14. Localized Surface Plasmon on 6H SiC with Ag Nanoparticles

    DEFF Research Database (Denmark)

    Wei, Yi; Fadil, Ahmed; Ou, Haiyan

    2017-01-01

    ) of the emissions of the donor-acceptor pairs of the SiC substrate. Roomtemperature measurements of photoluminescence (PL), transmittance and time-resolved photoluminescence (TRPL) were applied to characterize the LSP resonances. Through the finitedifference time-domain (FDTD) simulation of the LSP resonance...

  15. Single-step, rapid low-temperature synthesis of Si quantum dots embedded in an amorphous SiC matrix in high-density reactive plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Cheng Qijin [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, PO Box 218, Lindfield, NSW 2070 (Australia); Xu Shuyan [Plasma Sources and Applications Centre, NIE, Nanyang Technological University, 1 Nanyang Walk 637616 (Singapore); Ostrikov, Kostya, E-mail: Kostya.Ostrikov@csiro.au [Plasma Nanoscience Centre Australia (PNCA), CSIRO Materials Science and Engineering, PO Box 218, Lindfield, NSW 2070 (Australia) and School of Physics, University of Sydney, Sydney NSW 2006 (Australia)

    2010-01-15

    A simple, effective and innovative approach based on low-pressure, thermally nonequilibrium, high-density inductively coupled plasmas is proposed to rapidly synthesize Si quantum dots (QDs) embedded in an amorphous SiC (a-SiC) matrix at a low substrate temperature and without any commonly used hydrogen dilution. The experimental results clearly demonstrate that uniform crystalline Si QDs with a size of 3-4 nm embedded in the silicon-rich (carbon content up to 10.7at.%) a-SiC matrix can be formed from the reactive mixture of silane and methane gases, with high growth rates of {approx}1.27-2.34 nm s{sup -1} and at a low substrate temperature of 200 deg. C. The achievement of the high-rate growth of Si QDs embedded in the a-SiC without any commonly used hydrogen dilution is discussed based on the unique properties of the inductively coupled plasma-based process. This work is particularly important for the development of the all-Si tandem cell-based third generation photovoltaic solar cells.

  16. Effect of high-manganese cast steel strain hardening on the abrasion wear resistance in a mixture of SiC and water

    Directory of Open Access Journals (Sweden)

    Kalandyk B.

    2013-12-01

    Full Text Available The study attempts to determine the impact of the high-manganese cast steel strain hardening on its abrasion wear resistance in a mixture of SiC and water prepared in accordance with ASTM G75. For tests, the high-manganese cast steel containing 10.7, 17.9 and 20.02% Mn was selected. The results of microstructure examinations and abrasion wear resistance tests carried out on the material in non-hardened condition and after strain hardening with a force of 539.55kN were disclosed. Additionally, the surface of samples after a 16-hour cycle of abrasion tests was examined. Moreover, based on the obtained results, the effect of different contents of Mn in cast steel was studied, mainly in terms of its impact on the abrasion wear resistance. The results obtained on the tested materials were compared with the results obtained on the low-alloyed abrasion wear-resistant cast steel L35GSM.

  17. Universal Converter Using SiC

    Energy Technology Data Exchange (ETDEWEB)

    Dallas Marckx; Brian Ratliff; Amit Jain; Matthew Jones

    2007-01-01

    The grantee designed a high power (over 1MW) inverter for use in renewable and distributed energy systems, such as PV cells, fuel cells, variable speed wind turbines, micro turbines, variable speed gensets and various energy storage methods. The inverter uses 10,000V SiC power devices which enable the use of a straight-forward topology for medium voltage (4,160VAC) without the need to cascade devices or topologies as is done in all commercial, 4,160VAC inverters today. The use of medium voltage reduces the current by nearly an order of magnitude in all current carrying components of the energy system, thus reducing size and cost. The use of SiC not only enables medium voltage, but also the use of higher temperatures and switching frequencies, further reducing size and cost. In this project, the grantee addressed several technical issues that stand in the way of success. The two primary issues addressed are the determination of real heat losses in candidate SiC devices at elevated temperature and the development of high temperature packaging for SiC devices.

  18. First principle identification of SiC monolayer as an efficient catalyst for CO oxidation

    Energy Technology Data Exchange (ETDEWEB)

    Sinthika, S., E-mail: ranjit.t@res.srmuniv.ac.in, E-mail: sinthika90@gmail.com; Thapa, Ranjit, E-mail: ranjit.t@res.srmuniv.ac.in, E-mail: sinthika90@gmail.com [SRM Research Institute, SRM University, Kattankulathur 603203, Tamil Nadu (India); Reddy, C. Prakash [Department of Physics and Nanotechnology, SRM University, Kattankulathur 603203, Tamil Nadu (India)

    2015-06-24

    Using density functional theory, we investigated the electronic properties of SiC monolayer and tested its catalytic activity toward CO oxidation. The planar nature of a SiC monolayer is found to stable and is a high band gap semiconductor. CO interacts physically with SiC surface, whereas O{sub 2} is adsorbed with moderate binding. CO oxidation on SiC monolayer prefers the Eley Rideal mechanism over the Langmuir Hinshelwood mechanism, with an easily surmountable activation barrier during CO{sub 2} formation. Overall metal free SiC monolayer can be used as efficient catalyst for CO oxidation.

  19. Fictitious Reference Iterative Tuning-Based Two-Degrees-of-Freedom Method for Permanent Magnet Synchronous Motor Speed Control Using FPGA for a High-Frequency SiC MOSFET InverterMOSFET Inverter

    Directory of Open Access Journals (Sweden)

    Charles Ronald Harahap

    2016-11-01

    Full Text Available This paper proposes proportional-integral/proportional gain controller parameter tuning in a two-degrees-of-freedom (2DOF control system using the fictitious reference iterative tuning (FRIT method for permanent magnet synchronous motor (PMSM speed control using a field-programmable gate array (FPGA for a high-frequency SiC MOSFET (metal oxide semiconductor field-effect transistor inverter. The PI-P (proportional-integral/proportional controller parameters can be tuned using the FRIT method from one-shot experimental data without using a mathematical model of the plant. Particle swarm optimization is used for FRIT optimization. An inverter that uses a SiC MOSFET is presented to achieve high-frequency operation at up to100 kHz using a switching pulse-width modulation (PWM technique. As a result, a high-responsivity and high-stability PMSM (permanent magnet synchronous motor control system is achieved, where the speed response follows the ideal response characteristic for both the step response and the disturbance response. High-responsivity and optimal disturbance rejection can be achieved using the 2DOF control system. FPGA-based digital hardware control is used to maximize the switching frequency of the SiC MOSFET inverter. Finally, an experimental system is set up, and experimental results are presented to prove the viability of the proposed method.

  20. Heterogeneous Ti3SiC2@C-Containing Na2Ti7O15Architecture for High-Performance Sodium Storage at Elevated Temperatures.

    Science.gov (United States)

    Zou, Guodong; Zhang, Qingrui; Fernandez, Carlos; Huang, Gang; Huang, Jianyu; Peng, Qiuming

    2017-12-26

    Rational design of heterogeneous electrode materials with hierarchical architecture is a potential approach to significantly improve their energy densities. Herein, we report a tailored microwave-assisted synthetic strategy to create heterogeneous hierarchical Ti 3 SiC 2 @C-containing Na 2 Ti 7 O 15 (MAX@C-NTO) composites as potential anode materials for high-performance sodium storage in a wide temperature range from 25 to 80 °C. This composite delivers first reversible capacities of 230 mAh g -1 at 200 mA g -1 and 149 mAh g -1 at 3000 mA g -1 at 25 °C. A high capacity of ∼93 mAh g -1 without any apparent decay even after more than 10 000 cycles is obtained at an ultrahigh current density of 10 000 mA g -1 . Moreover, both a high reversible capacity and an ultralong durable stability are achieved below 60 °C for the same composites, wherein a 75.2% capacity retention (∼120 mAh g -1 at 10 000 mA g -1 ) is achieved after 3000 cycles at 60 °C. To the best of our knowledge, both the sodium storage performances and the temperature tolerances outperform those of all the Ti-based sodium storage materials reported so far. The superior sodium storage performances of the as-synthesized composites are attributed to the heterogeneous core-shell architecture, which not only provides fast kinetics by high pseudocapacitance but also prolongs cycling life by preventing particle agglomeration and facilitates the transportation of electrons and sodium ions by large micro/mesopore structure.

  1. Polymer precursors for SiC ceramic materials

    Science.gov (United States)

    Litt, Morton H.

    1986-01-01

    Work on precursor polymers to SiC was performed, concentrating on polymers made from decamethyl cyclohexasilyene units. The initial approach was to synthesize mixed diphenyl decamethyl cyclohexasilane, dephenylate, and polymerize. This produced polymers which had yields of up to 50 percent SiC. (Theoretical yield is 75 percent). The present approach is to make the polymer through the intermediate trans-1,4-diphenyl decamethyl cyclohexasilane. This should produce a crystalline polymer and high strength fibers. These will be thermally decomposed to SiC fibers. This requires new chemistry which is currently being studied.

  2. Challenges in Switching SiC MOSFET without Ringing

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    Switching SiC MOSFET without ringing in high frequency applications is important for meeting the EMI (ElectroMagnetic Interference) standard. Achieving a clean switching waveform of SiC MOSFET without additional components is becoming a challenge. In this paper, the switching oscillation mechanism...... is analysed in detail. According to the analysis, the optimal circuit design to minimize the parasitic parametric is introduced for a clean switching waveform. Experiment results show the clean switching waveform of SiC MOSFET. Guidelines are established for circuit design....

  3. Fabrication technique for moth-eye structure using low-energy electron-beam projection lithography for high-performance blue-light-emitting diode on SiC substrate

    Science.gov (United States)

    Seko, T.; Mabuchi, S.; Teramae, F.; Suzuki, A.; Kaneko, Y.; Kawai, R.; Kamiyama, S.; Iwaya, M.; Amano, H.; Akasaki, I.

    2009-02-01

    To realize high-efficiency light-emitting diodes (LEDs), it is indispensable to increase light extraction efficiency. We propose the moth-eye structure on the surface of an LED chip, which consists of periodic cones with a pitch of optical wavelength scale, and enables the significantly enhancement of light extraction efficiency. We have developed a new technique for moth-eye structure fabrication, on the basis of low-energy electron-beam projection lithography (LEEPL), which can be applied to the mass production of LEDs. The moth-eye structure formed at the bottom of a SiC wafer has periodically arranged cones with a 300 nm pitch and a 750 nm height. We also present blue LEDs fabricated on SiC substrates with and without the moth-eye structure, and discuss the effect of the moth-eye structure on the performance of LEDs.

  4. Excimer laser assisted chemical machining of SiC ceramic

    Science.gov (United States)

    Hibi, Yuko; Enomoto, Yuji; Kikuchi, Kaoru; Shikata, Nobuo; Ogiso, Hisato

    1995-02-01

    A highly effective method of machining ceramic has been newly developed using a krypton fluoride (KrF) excimer laser with a 248 nm wavelength. The laser was irradiated on SiC in water to form a soft hydrous oxide layer by photochemical reaction. The softened layer was then cut with a diamond tool to form a mirror surface finish. The optimum conditions were found for both high machining rate and better surface integrity of SiC.

  5. Distributed data transmitter

    Science.gov (United States)

    Brown, Kenneth Dewayne [Grain Valley, MO; Dunson, David [Kansas City, MO

    2008-06-03

    A distributed data transmitter (DTXR) which is an adaptive data communication microwave transmitter having a distributable architecture of modular components, and which incorporates both digital and microwave technology to provide substantial improvements in physical and operational flexibility. The DTXR has application in, for example, remote data acquisition involving the transmission of telemetry data across a wireless link, wherein the DTXR is integrated into and utilizes available space within a system (e.g., a flight vehicle). In a preferred embodiment, the DTXR broadly comprises a plurality of input interfaces; a data modulator; a power amplifier; and a power converter, all of which are modularly separate and distinct so as to be substantially independently physically distributable and positionable throughout the system wherever sufficient space is available.

  6. Effect of high temperature annealing on the grain size of CVD-grown SiC and experimental PBMR TRISO coated particles

    CSIR Research Space (South Africa)

    Mokoduwe, SM

    2010-10-01

    Full Text Available -Isotropic (TRISO) Coated Particles (CPs) in a graphite matrix with the SiC layer being the main barrier to fission and transmutation products. The integrity of the CP three layer system namely, Inner Pyrolytic Carbon- Silicon carbide- Outer Pyrolytic Carbon (IPy...

  7. High energy, narrow linewidth 1572nm ErYb-fiber based MOPA for a multi-aperture CO2 trace-gas laser space transmitter

    Science.gov (United States)

    Engin, Doruk; Mathason, Brian; Stephen, Mark; Yu, Anthony; Cao, He; Fouron, Jean-Luc; Storm, Mark

    2016-03-01

    A cladding-pumped, LMA ErYb fiber-based, amplifier is presented for use in a LIDAR transmitter for remote sensing of atmospheric CO2 from space. The amplifier is optimized for high peak power, high efficiency, and narrow linewidth operation at 1572.3nm. Using highly reliable COTS components, the amplifier achieves 0.5kW peak power (440uJ pulse energy), 3.3W average power with transform limited (TL) linewidth and M2energy when linewidth is increased to 100MHz. A preliminary conductively cooled laser optical module (LOM) concept has size 9x10x1.25 in (113 in3) and estimated weight of 7.2lb (3.2 kg). Energy scaling with pulse width up to 645uJ, 1.5usec is demonstrated. A novel doubleclad ErYb LMA fiber (30/250um) with high pump absorption (6 dB/m at 915nm) was designed, fabricated, and characterized for power scaling. The upgraded power amplifier achieves 0.8kW peak power (720uJ pulse energy) 5.4W average power with TL linewidth and M2<1.5.

  8. Development of High Temperature SiC Based Hydrogen/Hydrocarbon Sensors with Bond Pads for Packaging

    Science.gov (United States)

    Xu, Jennifer C.; Hunter, Gary W.; Chen, Liangyu; Biagi-Labiosa, Azlin M.; Ward, Benjamin J.; Lukco, Dorothy; Gonzalez, Jose M., III; Lampard, Peter S.; Artale, Michael A.; Hampton, Christopher L.

    2011-01-01

    This paper describes efforts towards the transition of existing high temperature hydrogen and hydrocarbon Schottky diode sensor elements to packaged sensor structures that can be integrated into a testing system. Sensor modifications and the technical challenges involved are discussed. Testing of the sensors at 500 C or above is also presented along with plans for future development.

  9. The study of high Curie temperature ferromagnetism properties in Mn-doped SiC thin film

    Directory of Open Access Journals (Sweden)

    Chaoyang Kang

    2015-01-01

    Full Text Available Mn-doped 3C-SiC film has been prepared onto the Si (111 substrate by employing a molecular beam epitaxy method. The experimental analysis establishes that the prepared sample shows the ferromagnetic property with a relatively high Curie temperature (Tc of 355 K, which is an exciting phenomenon on account of the scarceness in the SiC-based diluted magnetic semiconductor. The analysis derived from the X-ray diffraction and absorption spectroscopy patterns indicates that Mn atoms should react with Si atoms and then form Mn4Si7 compounds. Combined with the theoretical simulation, it is speculated that a new alloy phase of Mn4Si7Cx maybe appear, which should be responsible for the exceptionally high Tc ferromagnetic behavior in the sample.

  10. Development of Process Technologies for High-Performance MOS-Based SiC Power Switching Devices

    Science.gov (United States)

    2007-08-01

    ratios for the two BJTs are both large. Even if the MOS gate is turned off, the two transistors can still feed base current to each other and keep...investigated are insulated-gate bipolar transistors (IGBTs) in 4H-SiC. The IGBT combines the best aspects of MOS and bipolar power transistors ...IGBTs can be thought of as a fusion of a MOSFET and a BJT . The MOSFET provides a high input impedance while the BJT provides conductivity modulation of

  11. Microwave joining of SiC ceramics and composites

    Energy Technology Data Exchange (ETDEWEB)

    Ahmad, I.; Silberglitt, R.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States); Katz, J.D. [Los Alamos National Lab., NM (United States)

    1997-04-01

    Potential applications of SiC include components for advanced turbine engines, tube assemblies for radiant burners and petrochemical processing and heat exchangers for high efficiency electric power generation systems. Reliable methods for joining SiC are required in order to cost-effectively fabricate components for these applications from commercially available shapes and sizes. This manuscript reports the results of microwave joining experiments performed using two different types of SiC materials. The first were on reaction bonded SiC, and produced joints with fracture toughness equal to or greater than that of the base material over an extended range of joining temperatures. The second were on continuous fiber-reinforced SiC/SiC composite materials, which were successfully joined with a commercial active brazing alloy, as well as by using a polymer precursor.

  12. SiC MOSFETs based split output half bridge inverter

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig; Beczkowski, Szymon

    2014-01-01

    . This paper makes the current commutation mechanism and efficiency analysis of half bridge with split output based on SiC MOSFETs. Current commutation process analysis is illustrated together with LTspice simulation and afterwards, verified by the experimental results of a double pulse test circuit with split......Body diode of SiC MOSFETs has a relatively high forward voltage drop and still experiences reverse recovery phenomenon. Half bridge with split output aims to decouple both the body diode and junction capacitance of SiC MOSFETs, therefore achieving a reduced switching loss in a bridge configuration...... output. The double pulse test shows the devices' current during commutation process and the reduced switching losses of SiC MOSFETs compared to that of the traditional half bridge. The efficiency comparison is presented with experimental results of half bridge power inverter with split output...

  13. Fabrication of SiC mat by radiation processing

    Science.gov (United States)

    Kang, Phil-Hyun; Jeun, Joon-Pyo; Seo, Dong-Kwon; Nho, Young-Chang

    2009-07-01

    Silicon carbide (SiC) exhibits many important properties, such as high intrinsic strength, stiffness, and high temperature stability. Therein, it is considered to be one of the most promising candidates for reinforcement of advanced ceramic matrix composites. The use of preceramic polymers presents the possibility of solving the intricacies involved in obtaining a new generation of ceramic materials. In this study, a radiation processing method was used to fabricate a cured polycarbosilane mat as a preceramic polymer. The polycarbosilane mat was cured by electron beam (e-beam) irradiation up to 10 MGy in an inert gas atmosphere. Next, the e-beam-cured PCS mat, as green fiber, was carbonized to produce the SiC mat. The conversion process of the PCS mat into the SiC mat was investigated by SEM, FT-IR, XRD, and TGA. According to FT-IR analysis, the Si-H peak intensity was observed to decrease as the polymer structure changed from polycarbosilane to SiC. The XRD patterns of SiC showed the diffraction peaks at (1 1 1), (2 2 0), and (3 1 1) which indicated the emergence of β-SiC. TGA curve shows that weight percent of residue of electrospun PCS mat, e-beam-cured PCS mat and pyrolyzed SiC mat up to 1000 °C were 72.5%, 88.3%, and 99.2%, respectively.

  14. A 3.1-4.8 GHz transmitter with a high frequency divider in 0.18 {mu}m CMOS for OFDM-UWB

    Energy Technology Data Exchange (ETDEWEB)

    Zheng Renliang; Ren Junyan; Li Wei; Li Ning, E-mail: jyren@fudan.edu.c [Micro/Nano Science and Innovation Platform, State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

    2009-12-15

    A fully integrated low power RF transmitter for a WiMedia 3.1-4.8 GHz multiband orthogonal frequency division multiplexing ultra-wideband system is presented. With a separate transconductance stage, the quadrature up-conversion modulator achieves high linearity with low supply voltage. The co-design of different resonant frequencies of the modulator and the differential to single (D2S) converter ensures in-band gain flatness. By means of a series inductor peaking technique, the D2S converter obtains 9 dB more gain without extra power consumption. A divided-by-2 divider is used for carrier signal generation. The measurement results show an output power between -10.7 and -3.1 dBm with 7.6 dB control range, an OIP3 up to 12 dBm, a sideband rejection of 35 dBc and a carrier rejection of 30 dBc. The ESD protected chip is fabricated in the Jazz 0.18 {mu}m RF CMOS process with an area of 1.74 mm{sup 2} and only consumes 32 mA current (at 1.8 V) including the test associated parts. (semiconductor integrated circuits)

  15. Characterization of femtosecond-laser-induced periodic structures on SiC substrates

    Science.gov (United States)

    Miyagawa, Reina; Ohno, Yutaka; Deura, Momoko; Yonenaga, Ichiro; Eryu, Osamu

    2018-02-01

    We investigated the crystalline state of femtosecond-laser-induced periodic structures using a transmission electron microscope (TEM). The core of the 200-nm-pitch periodic nanostructures on SiC retained a high crystalline quality continued from the SiC substrate, where the crystal orientation was aligned with that of the SiC substrate. These results suggest that the periodic nanostructures were formed by periodic etching and not by rearrangement. At high laser power, microstructures with sizes larger than 2 µm were formed on the periodic nanostructures. The microstructures were amorphous and extended from the amorphous SiC layer that covered the periodic nanostructures.

  16. The use of near infrared transmittance kernel sorting technology to salvage high quality grain from grain downgraded due to Fusarium damage

    Directory of Open Access Journals (Sweden)

    Michael E. Kautzman

    2015-03-01

    Full Text Available The mycotoxins associated with specific Fusarium fungal infections of grains are a threat to global food and feed security. These fungal infestations are referred to as Fusarium Head Blight (FHB and lead to Fusarium Damaged Kernels (FDK. Incidence of FDK >0.25% will lower the grade, with a tolerance of 5% FDK for export feed grain. During infestation, the fungi can produce a variety of mycotoxins, the most common being deoxynivalenol (DON. Fusarium Damaged Kernels have been associated with reduced crude protein (CP, lowering nutritional, functional and grade value. New technology has been developed using Near Infrared Transmittance (NIT spectra that estimate CP of individual kernels of wheat, barley and durum. Our objective is to evaluate the technology's capability to reduce FDK and DON of downgraded wheat and ability to salvage high quality safe kernels. In five FDK downgraded sources of wheat, the lowest 20% CP kernels had significantly increased FDK and DON with the high CP fractions having decreased FDK and DON, thousand kernel weights (TKW and bushel weight (Bu. Strong positive correlations were observed between FDK and DON (r = 0.90; FDK and grade (r = 0.62 and DON and grade (r = 0.62. Negative correlations were observed between FDK and DON with CP (r = −0.27 and −0.32; TKW (r = −0.45 and −0.54 and Bu (r = −0.79 and −0.74. Results show improved quality and value of Fusarium downgraded grain using this technology.

  17. Formation and characterization of porous SiC by anodic oxidation using potassium persulfate solution

    Science.gov (United States)

    Iwasa, Y.; Kamiyama, S.; Iwaya, M.; Takeuchi, T.; Akasaki, I.

    2018-01-01

    The formation process of porous SiC by anodic oxidation was investigated, aiming at the generation of pure white light with a high color rendering index (CRI) and high luminous efficiency. The efficiency of white light emission from porous SiC and its wavelength are strongly dependent on the porous structure such as the average pore size and porosity. In this study, we examined the structure and optical properties of porous SiC by adding potassium persulfate (K2S2O8) as an oxidant in HF solution to control the porosity of porous SiC formed by anodic oxidation. By increasing the amount of the oxidant, we enhanced the integrated light emission intensity of porous SiC to 81 times that of bulk SiC. Through the study of porous SiC we demonstrated that the peak wavelength of the porous SiC could be controlled from 370 to 500 nm. Porous SiC created by anodic oxidation was thus proven to have great potential for realizing high-CRI white light generation using LEDs.

  18. 47 CFR 74.461 - Transmitter power.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 4 2010-10-01 2010-10-01 false Transmitter power. 74.461 Section 74.461....461 Transmitter power. (a) Transmitter power is the power at the transmitter output terminals and.... For the purpose of this Subpart, the transmitter power is the carrier power. (b) The authorized...

  19. Gate driver with high common mode rejection and self turn-on mitigation for a 10 kV SiC MOSFET enabled MV converter

    DEFF Research Database (Denmark)

    Dalal, Dipen Narendrabhai; Christensen, Nicklas; Jørgensen, Asger Bjørn

    2017-01-01

    This paper investigates gate driver design challenges encountered due to the fast switching transients in medium voltage half bridge silicon carbide MOSFET power modules. The paper presents, design of a reduced isolation capacitance regulated DC-DC power supply and a gate driver with an active...... Miller clamp circuit for a 10 kV half bridge SiC MOSFET power module. Designed power supply and the gate driver circuit are verified in a double pulse test setup and a continuous switching operation using the 10 kV half bridge silicon carbide MOSFET power module. An in-depth experimental verification...

  20. Characterisation of 10 kV 10 A SiC MOSFET

    DEFF Research Database (Denmark)

    Eni, Emanuel-Petre; Incau, Bogdan Ioan; Munk-Nielsen, Stig

    2015-01-01

    The objective of this paper is to characterize and evaluate the static and dynamic performances of 10 kV 10 A 4H-SIC MOSFETs at high temperatures. The results show good electrical performances of the SiC MOSFETs for high temperature operations. The double-pulse test results showed interesting beh...

  1. ELID grinding of SiC ultra lightweight mirror

    Science.gov (United States)

    Eto, Hiroaki; Dai, Yutang; Ebizuka, Noboru; Saito, Yasutaka; Suzuki, Toru; Lin, Weimin; Ohmori, Hitoshi; Ebisuzaki, Toshikazu; Takami, Hideki

    2017-11-01

    Silicon carbide (SiC) is the most advantageous as the material of various telescope mirrors, because SiC has high stiffness, high thermal conductivity, low thermal expansion and low density and so on [1] [2]. However, since SiC is very hard, it is difficult to obtain the surfaces efficiently by using ordinary grinding method. Therefore, we developed the ultra lightweight mirror by ELID (ELectrolytic In-process Dressing) grinding method and ultra-precision grinding machine. ELID grinding method is the new grinding technology which one of authors invented, produces the quality of the high surface efficiently, and is effective in processing of a very hard material, such as crystalline silicon and sapphire, ceramics, glasses, hard metals and so on. SiC mirror for space telescope is designed as regular polygon rib structures in the rear face for reducing weight, and both the optical face and the backside ribs are so thin that deformation of the mirror cannot disregard. Therefore, in order to feed back deformation of the mirror to the orbit of grinding wheel, it is necessary to analyze deformation. In this research, we present the results which fabricated mirrors of sintered SiC by the ELID grinding method, the numerical calculation results of the profile deformations analyzed by FEM, and new jig for Φ360mm a mirror.

  2. High-Temperature Active Soldering of SiC Particle-Reinforced Al-MMC Using a Novel ZnAlGaMgTi Filler Metal

    Science.gov (United States)

    Chen, Biqiang; Zhang, Guifeng; Zhang, Linjie; Xu, Tingting

    2017-10-01

    In order to broaden the application of SiC particle-reinforced aluminum matrix composite in electronics packaging, newly developed ZnAlGaMgTi filler with a low melting point of 418-441 °C was utilized as filler metal for active soldering of aluminum matrix composites (70 vol.%, SiCp/Al-MMCs) for the first time. The effect of loading pressure on joint properties of ZnAlGaMgTi active filler was investigated. The experimental results indicated that novel filler could successfully solder Al-MMCs, and the presence of Mg in the filler enhanced the penetration of Zn, while the forming of Zn-rich barrier layer influenced the active element MPD (melting point depressant) diffusion into parent composite, and the bulk-like (Mg-Si)-rich phase and Ti-containing phase were readily observed at the interface and bond seam. With the increase in loading pressure, the runout phenomenon appeared more significant, and the filler foil thickness and the Zn penetration depth varied pronouncedly. Sound joints with maximum shear strength of 29.6 MPa were produced at 480 °C at 1 MPa, and the crack occurred adjacent to the boundary of SiC particle and then propagated along the interface. A novel model describing the significant mutual diffusion of Al and Zn atoms between the parent material and solder was proposed.

  3. Oxidation Behavior and Mechanism of Al4SiC4 in MgO-C-Al4SiC4 System

    Directory of Open Access Journals (Sweden)

    Huabai Yao

    2017-06-01

    Full Text Available Al4SiC4 powder with high purity was synthesized using the powder mixture of aluminum (Al, silicon (Si, and carbon (C at 1800 °C in argon. Their oxidation behavior and mechanism in a MgO-C-Al4SiC4 system was investigated at 1400–1600 °C. XRD, SEM, and energy dispersive spectrometry (EDS were adopted to analyze the microstructure and phase evolution. The results showed that the composition of oxidation products was closely related to the atom diffusion velocity and the compound oxide layer was generated on Al4SiC4 surface. In addition, the effect of different CO partial pressure on the oxidation of Al4SiC4 crystals was also studied by thermodynamic calculation. This work proves the great potential of Al4SiC4 in improving the MgO-C materials.

  4. Amorphization of SiC under ion and neutron irradiation

    Science.gov (United States)

    Snead, L. L.; Zinkle, S. J.; Hay, J. C.; Osborne, M. C.

    1998-05-01

    This paper presents results on the microstructure and physical properties of SiC amorphized by both ion and neutron irradiation. Specifically, 0.56 MeV Si ions have been implanted in single crystal 6H-SiC from ambient through >200°C and the critical threshold for amorphization was measured as a function of the irradiation temperature. From a high resolution transmission electron microscopy (HRTEM) study of the crystalline to amorphous transition region in these materials, elongated pockets of amorphous material oriented parallel to the free surface are observed. Single crystal 6H-SiC and hot pressed and sintered 6H and 3C SiC were neutron irradiated at approximately 70°C to a dose of ˜2.56 dpa causing complete amorphization. Property changes resulting from the crystal to amorphous transition in SiC include a density decrease of 10.8%, a hardness decrease from 38.7 to 21.0 GPa, and a decrease in elastic modulus from 528 to 292 GPa. Recrystallization of the amorphized, single crystal 6H-SiC appears to occur in two stages. In the temperature range of ˜800-1000°C, crystallites nucleate and slowly grow. In the temperature range of 1125-1150°C spontaneous nucleation and rapid growth of crystallites occur. It is further noted that amorphized 6H (alpha) SiC recrystallizes to highly faulted fcc (beta) SiC.

  5. Optical transmittance of multilayer graphene

    Science.gov (United States)

    Zhu, Shou-En; Yuan, Shengjun; Janssen, G. C. A. M.

    2014-10-01

    We study the optical transmittance of multilayer graphene films up to 65 layers thick. By combing large-scale tight-binding simulation and optical measurement on CVD multilayer graphene, the optical transmission through graphene films in the visible region is found to be solely determined by the number of graphene layers. We argue that the optical transmittance measurement is more reliable in the determination of the number of layers than the commonly used the Raman spectroscopy. Moreover, the optical transmittance measurement can be applied also to other 2D materials with weak van der Waals interlayer interaction.

  6. Characterization of high-dose and high-energy implanted gate and source diode and analysis of lateral spreading of p gate profile in high voltage SiC static induction transistors

    Science.gov (United States)

    Onose, Hidekatsu; Kobayashi, Yutaka; Onuki, Jin

    2017-03-01

    The effect of the p gate dose on the characteristics of the gate-source diode in SiC static induction transistors (SIT) was investigated. It was found that a dose of 1.5 × 1014 cm-2 yields a pn junction breakdown voltage higher than 60 V and good forward characteristics. A normally on SiC SIT was fabricated and demonstrated. A blocking voltage higher than 2.0 kV at a gate-source voltage of -50 V and on-resistance of 70 mΩ cm2 were obtained. Device simulations were performed to investigate the effect of the lateral spreading. By comparing the measured I-V curves with simulation results, the lateral spreading factor was estimated to be about 0.5. The lateral spreading detrimentally affected the electrical properties of the SIT made using implantations at energies higher than 1 MeV.

  7. Transmittance measurement using scanning LED

    Science.gov (United States)

    Ping, Yao; Mohan, Rosmin Elsa; Lau, Gih-Keong; Asundi, Anand Krishna

    2017-06-01

    In order to measure the transmittance for a large field of view (FOV), a system based on scanning LED is developed. The system mainly consists of tunable LEDs, a glass diffuser and a camera. The LED panel would display different colors in the CIE color space. An algorithm of converting the light wavelength to the RGB values is adopted. The images are captured using a monochrome camera. Depending on the number of colors displayed, the transmittance map for the entire spread of visible colors can be determined. Results are compared with those measured through a spectrometer. The spectral transmittance for the two methods exhibit good similarity. The system provides a means of measuring transmittance with no moving parts and can be extended to other hyperspectral imaging applications.

  8. Optical transmittance of multilayer graphene

    OpenAIRE

    Zhu, Shou-En; Yuan, Shengjun; Janssen, G.C.A.M.

    2014-01-01

    We study the optical transmittance of multilayer graphene films up to 65 layers thick. By combing large-scale tight-binding simulation and optical measurement on CVD multilayer graphene, the optical transmission through graphene films in the visible region is found to be solely determined by the number of graphene layers. We argue that the optical transmittance measurement is more reliable in the determination of the number of layers than the commonly used Raman Spectroscopy. Moreover, optica...

  9. Effect of strain rate on the formation of the microstructure of a 1950/10% SiC metal matrix composite under high temperature

    Science.gov (United States)

    Belozerov, G. A.; Smirnov, A. S.; Konovalov, A. V.; Muizemnek, O. Yu.; Perminova, A. V.

    2017-12-01

    The paper studies the effect of strain rate on the formation of grains and low-angle boundaries in an aluminum matrix composite based on the 1950 alloy (analogous to the AA7075 alloy) with 10 vol% SiC. The deformation of the metal matrix composite, produced by a powder technique, is investigated at a temperature of 500 °C. The specimens are investigated by electron backscatter diffraction before and after deformation at strain rates ranging from 0.1 to 5.5 s-1. It has been established that continuous dynamic recrystallization occurs in the composite at 500 °C in the whole strain rate range considered. The recrystallization is followed by a decrease in the average grain diameter and an increase in the density of the low-angle boundaries with increasing strain rate.

  10. Recent developments in SiC single-crystal electronics

    Science.gov (United States)

    Ivanov, P. A.; Chelnokov, V. E.

    1992-07-01

    The present paper is an analytical review of the last five or six years of research and development in SiC. It outlines the major achievements in single crystal growth and device technology. Electrical performance of SiC devices designed during these years and some new trends in SiC electronics are also discussed. During the 1980s the studies on sublimation and liquid-phase epitaxial growth of SiC single crystal were continued successfully. At that time, such methods as chemical vapour deposition, thermal oxidation, 'dry' plasma etching and ion implantation which yielded good results with silicon, came into use. As a result of the technological progress, discrete devices appeared, which incorporated the potential advantages of SiC as a wide bandgap material. Among these were high temperature (500-600 degrees C) rectifier diodes and field-effect transistors, high efficiency light-emitting diodes for the short-wave region of the visible spectrum, and detectors of ultraviolet radiation. It should be stressed that the devices were of commercial quality and could be applied in various fields (control systems of automobile engines, aerospace apparatus, geophysical equipment, colour displays in information systems, etc.). The developments in technology and the promising results of research on electrical performance of the devices already available give hope that in the near future SiC may become the basic material for power microwave devices, and for thermo- and radiation-resistant integrated circuits. This process can be stimulated by further perfection of single-crystal substrates of large area, by development of stable high temperature ohmic contacts, micro- and heterostructures.

  11. Ground-based differential absorption lidar for water-vapor and temperature profiling: development and specifications of a high-performance laser transmitter.

    Science.gov (United States)

    Wulfmeyer, V

    1998-06-20

    An all-solid-state laser transmitter for a water-vapor and temperature differential absorption lidar (DIAL) system in the near infrared is introduced. The laser system is based on a master-slave configuration. As the slave laser a Q-switched unidirectional alexandrite ring laser is used, which is injection seeded by the master laser, a cw Ti:sapphire ring laser. It is demonstrated that this laser system has, what is to my knowledge, the highest frequency stability (15 MHz rms), narrowest bandwidth (99.99%) of all the laser transmitters developed to date in the near infrared. These specifications fulfill the requirements for water-vapor measurements with an error caused by laser properties of specifications are maintained during long-term operation in the field. The single-mode operation of this laser system makes the narrow-band detection of the DIAL backscatter signal possible. Thus the system has the potential to be used for accurate temperature measurements and for simultaneous DIAL and Doppler wind measurements.

  12. Rare earth element abundances in presolar SiC

    Science.gov (United States)

    Ireland, T. R.; Ávila, J. N.; Lugaro, M.; Cristallo, S.; Holden, P.; Lanc, P.; Nittler, L.; Alexander, C. M. O'D.; Gyngard, F.; Amari, S.

    2018-01-01

    Individual isotope abundances of Ba, lanthanides of the rare earth element (REE) group, and Hf have been determined in bulk samples of fine-grained silicon carbide (SiC) from the Murchison CM2 chondrite. The analytical protocol involved secondary ion mass spectrometry with combined high mass resolution and energy filtering to exclude REE oxide isobars and Si-C-O clusters from the peaks of interest. Relative sensitivity factors were determined through analysis of NIST SRM reference glasses (610 and 612) as well as a trace-element enriched SiC ceramic. When normalised to chondrite abundances, the presolar SiC REE pattern shows significant deficits at Eu and Yb, which are the most volatile of the REE. The pattern is very similar to that observed for Group III refractory inclusions. The SiC abundances were also normalised to s-process model predictions for the envelope compositions of low-mass (1.5-3 M⊙) AGB stars with close-to-solar metallicities (Z = 0.014 and 0.02). The overall trace element abundances (excluding Eu and Yb) appear consistent with the predicted s-process patterns. The depletions of Eu and Yb suggest that these elements remained in the gas phase during the condensation of SiC. The lack of depletion in some other moderately refractory elements (like Ba), and the presence of volatile elements (e.g. Xe) indicates that these elements were incorporated into SiC by other mechanisms, most likely ion implantation.

  13. Detection Simulation of SiC Semiconductor Detector

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hong Yeop; Kim, Jeong Dong; Lee, Yong Deok; Kim, Ho Dong [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-10-15

    In a high radiation environment, it has received attention as a material for detecting radiation (neutron). As the field of application of a SIC neutron detector, the semiconductor detector used in cosmic rays was proposed by Ruddy. Recently, X-ray and low-energy gamma ray spectrometry with SiC detectors has been reported. Its usability has recently been being proved in neutron dose surveillance in BNCT (Boron-Capture Neutron Therapy), thermal neutron detection in a waste drum, nuclear material surveillance, and fast neutron detection. In addition, in 2006, an experiment was actually performed by Natsume on spent nuclear fuel. SIC is suitable for radiation surveillance in a complex radiation field emitted from spent nuclear fuel and the pyropocess process. In the radiation field of spent nuclear fuel, neutrons and gamma rays are generated. In this research, the performance of a SiC detector made at KAERI was evaluated to obtain a discriminated neutron signal. First, using neutron ({sup 252}Cf), alpha ({sup 241}Am), and gamma ({sup 60}Co) sources, a SiC semi- conductor detector was tested. The energy spectrum in a complex radiation field was simulated using the MCNPX 2.5. Finally, the experimental results by Ruddy were compared with the simulation results. Research result, whether the SiC semiconductor detector operating or not was confirmed through the simulation according to the neutron, gamma. The simulation results were similar to those of Ruddy. A further study is underway to investigate the discriminated neutron signal of a complex radiation field.

  14. Highly reliable and efficient 1.5μm-fiber-MOPA-based, high-power laser transmitter for space communication

    Science.gov (United States)

    Engin, Doruk; Litvinovitch, Slava; Kimpel, Frank; Puffenberger, Kent; Dang, Xung; Fouron, Jean-Luc; Martin, Nigel; Storm, Mark; Gupta, Shantanu; Utano, Rich

    2014-06-01

    Fibertek has developed a space qualifiable, highly efficient, high power (managed by precise linewidth control and by use of LMA gain fiber in the power stage while maintaining the required diffraction limited, and highly polarized (PERweight of the built LOM are 8"x10"x2.375" and 3 kg, respectively. With improvements in the modulation scheme and component specification, achieved LOM electrical to optical efficiency is over 17.0%. Highly efficient operation is sustained for a wide range of pulse-position modulation (16 to 128-ary PPM) formats with pulse widths varying from 8nsec to 0.5nsec and operation temperature 10-50C. Pressure stress analysis, random vibration analysis and thermal analysis of the designed LOM predicts compliance with NASA GEVS levels for vibration and thermal cycling in a vacuum environment. System will undergo both thermal vacuum and vibration testing to validate the design.

  15. Processing of sintered alpha SiC

    Science.gov (United States)

    Storm, R. S.

    1984-01-01

    Processing methods of sintered alpha SiC for engine applications are developed in a cost effective manner, using a submicron sized powder blended with sintering aids (boron and carbon). The processes for forming a green powder compact, such as dry pressing, cold isostatic pressing and green machining, slip casting, aqueous extrusion, plastic extrusion, and injection molding, are described. Dry pressing is the simplest route to component fabrication, and is carried out at approximately 10,000 psi pressure, while in the cold isostatic method the pressure could go as high as 20,000 psi. Surfactants are added to control settling rates and casting characteristics in the slip casting. The aqueous extrusion process is accomplished by a hydraulic ram forcing the aqueous mixture through a die. The plastic forming processes of extrusion and injection molding offer the potential of greater diversity in shape capacity. The physical properties of sintered alpha SiC (hardness, Young's modulus, shear modulus, and thermal diffusivity) are extensively tested. Corrosion resistance test results of silicon carbide are included.

  16. Epitaxial grapheme on SiC(0001) and SiC(000-1): a photoelectron diffraction (XPD) study

    Energy Technology Data Exchange (ETDEWEB)

    Lima, L.H.; Siervo, A.; Landers, R. [Universidade Estadual de Campinas (IFGW/UNICAMP), SP (Brazil). Inst. de Fisica Gleb Wataghin; Goncalves, A.B.; Lacerda, R.G. [Universidade Federal de Minas Gerais (UFMG), Belo Horizonte, MG (Brazil). Dept. de Fisica; Tapia, P.H. [Universidad Tecnica Federico Santa Maria, Valparaiso (Chile)

    2011-07-01

    Full text. A flat, single layer of graphite known as grapheme has become the focus of studies due to its exceptional properties and fascinating applications. Large scale grapheme layers for a possible application can be grown epitaxially on SiC by Si sublimation. Even before the interest in grapheme, the surface of SiC was already extensively studied. It exhibits a large variety of surface reconstructions and these reconstructions are very dependent of sample preparation and orientation (0001) or (000-1). In this study, we show a preliminary investigation of the structural properties of grapheme layers on SiC (0001) e SiC (000-1) by photoelectron diffraction (XPD). The surfaces were prepared by heating the 1x1 surface to temperatures of about 1150 deg C in high ultra vacuum and the various reconstructions were monitored by Low Energy Electron Diffraction (LEED) and X-Ray Photoelectron Spectroscopy (XPS). In particular for the Si-terminated surface, that is SiC(0001), the interface between grapheme and SiC is characterized by the so-called (6{radical}3 x 6{radical}3) R30 deg reconstruction (buffer layer). The interpretation of this reconstruction, which is the initial stage of graphitization, has lead to controversy in the literature. We will further discuss the buffer layer structure in terms of the XPD results. The XPD experiments were performed at SGM beam line at LNLS using photons with 400/450 eV probing the Si2p and C1s core level. The C1s signal was separate in to contributions from volume and surface and compares the experimental results with photoelectron multiple scattering calculations performed with the MSCD package

  17. Growth of high-quality cubic GaN on Si (0 0 1) coated with ultra-thin flat SiC by plasma-assisted molecular-beam epitaxy

    Science.gov (United States)

    Wang, D.; Hiroyama, Y.; Tamura, M.; Ichikawa, M.; Yoshida, S.

    2000-06-01

    Cubic GaN films were grown on Si (0 0 1) coated with an ultra-thin flat SiC buffer layer under both Ga-rich and N-rich conditions. The SiC buffer layer (thickness of about 2.5 nm) was grown by carbonization of Si (0 0 1) substrates in C 2H 2 (pressure of 5×10 -6 Torr) at 970°C. The GaN films prepared under the Ga-rich condition had a local atomically smooth surface. High-resolution transmission electron microscopy (TEM) showed that the main defects in the GaN films are stacking faults along the [ 1 1¯ 1> ] and [ 1 1¯ 1> 1 ] directions. Plan-view TEM showed that the dislocation density within grains was much lower than the overall dislocation density in the GaN films. The dislocation density within grains was about 4×10 5 cm -2. X-ray diffraction (XRD) and TEM showed that the GaN films had a mosaic structure. The full-width at half-maximum of the (0 0 2) XRD peak of a 0.82-μm-thick film was 19 min, one of the lowest values reported so far for cubic GaN films. And the GaN films prepared under both Ga-rich and N-rich conditions showed a strong near-band-edge photoluminescence. Yellow-band luminescence and donor-acceptor recombination peaks were also detected when the GaN films contained more extended defects and/or native-point defects.

  18. Polycrystalline SiC as source material for the growth of fluorescent SiC layers

    DEFF Research Database (Denmark)

    Kaiser, M.; Hupfer, T.; Jokubavicus, V.

    2013-01-01

    Polycrystalline doped SiC act as source for fluorescent SiC. We have studied the growth of individual grains with different polytypes in the source material. We show an evolution and orientation of grains of different polytypes in polycrystalline SiC ingots grown by the Physical Vapor Transport m...

  19. ZrB2-SiC as a protective coating for C/SiC composites: Effect of high temperature oxidation on thermal shock property and protection mechanism

    Directory of Open Access Journals (Sweden)

    Xiang Yang

    2016-06-01

    Full Text Available ZrB2-SiC coating was prepared on C/SiC composites surface by slurry method, and then the thermal fatigue behavior of ZrB2-SiC coated C/SiC composites was studied. The composition of the coating layers was characterized by XRD, SEM and EDS. With the thickness was 200 μm, the coating was ZrB2 and SiC. During thermal cycle between 1773 K in air and 373 K in boiling water, the weight of the ZrB2-SiC coated composites decreased lightly. The decrease of the flexural strength during the thermal cycle was primarily due to the debonding of the fiber–matrix interfaces and the oxidation of the coated samples. Compared with the uncoated C/SiC composites, the coating played an important role in enhancing the resistance to the thermal shock.

  20. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) Power Processing Unit (PPU) for Hall Effect...

  1. High-Capacity Free-Space Optical Communications Between a Ground Transmitter and a Ground Receiver via a UAV Using Multiplexing of Multiple Orbital-Angular-Momentum Beams.

    Science.gov (United States)

    Li, Long; Zhang, Runzhou; Zhao, Zhe; Xie, Guodong; Liao, Peicheng; Pang, Kai; Song, Haoqian; Liu, Cong; Ren, Yongxiong; Labroille, Guillaume; Jian, Pu; Starodubov, Dmitry; Lynn, Brittany; Bock, Robert; Tur, Moshe; Willner, Alan E

    2017-12-12

    We explore the use of orbital-angular-momentum (OAM)-multiplexing to increase the capacity of free-space data transmission to moving platforms, with an added potential benefit of decreasing the probability of data intercept. Specifically, we experimentally demonstrate and characterize the performance of an OAM-multiplexed, free-space optical (FSO) communications link between a ground transmitter and a ground receiver via a moving unmanned-aerial-vehicle (UAV). We achieve a total capacity of 80 Gbit/s up to 100-m-roundtrip link by multiplexing 2 OAM beams, each carrying a 40-Gbit/s quadrature-phase-shift-keying (QPSK) signal. Moreover, we investigate for static, hovering, and moving conditions the effects of channel impairments, including: misalignments, propeller-induced airflows, power loss, intermodal crosstalk, and system bit error rate (BER). We find the following: (a) when the UAV hovers in the air, the power on the desired mode fluctuates by 2.1 dB, while the crosstalk to the other mode is -19 dB below the power on the desired mode; and (b) when the UAV moves in the air, the power fluctuation on the desired mode increases to 4.3 dB and the crosstalk to the other mode increases to -10 dB. Furthermore, the channel crosstalk decreases with an increase in OAM mode spacing.

  2. Flexoelectric in-plane switching (IPS) mode with ultra-high-transmittance, low-voltage, low-frequency, and a flicker-free image.

    Science.gov (United States)

    Kim, MinSu; Ham, Hyeong Gyun; Choi, Han-Sol; Bos, Philip J; Yang, Deng-Ke; Lee, Joong Hee; Lee, Seung Hee

    2017-03-20

    The demands for a power-saving mode for displaying static images are ubiquitous not only in portable devices but also in price tags and advertising panels. At a low-frequency driving in liquid crystal displays (LCDs) for low-power consumption, the flexoelectric effect arises even in calamitic liquid crystals and the optical appearance of this physical phenomenon is found to be unusually large, being noticed as an image-flickering. Although the inherent integrated optical transmittance of in-plane switching (IPS) mode is relatively lower than that of fringe-field switching (FFS) mode, the IPS mode shows no static image-flickering but an optical spike (the so-called optical bounce), at the transient moment between signal positive and negative frames. Here, we demonstrate an IPS mode using negative dielectric anisotropy of liquid crystals (Δε mode with Δε mode with Δε mode with Δε > 0). We believe the result will contribute not only to the scientific understanding of the optical appearance of flexoelectric effect but also pave the way for engineering of a superior low-power consumption LCD.

  3. Additive Manufacturing of SiC Based Ceramics and Ceramic Matrix Composites

    Science.gov (United States)

    Halbig, Michael Charles; Singh, Mrityunjay

    2015-01-01

    Silicon carbide (SiC) ceramics and SiC fiber reinforcedSiC ceramic matrix composites (SiCSiC CMCs) offer high payoff as replacements for metals in turbine engine applications due to their lighter weight, higher temperature capability, and lower cooling requirements. Additive manufacturing approaches can offer game changing technologies for the quick and low cost fabrication of parts with much greater design freedom and geometric complexity. Four approaches for developing these materials are presented. The first two utilize low cost 3D printers. The first uses pre-ceramic pastes developed as feed materials which are converted to SiC after firing. The second uses wood containing filament to print a carbonaceous preform which is infiltrated with a pre-ceramic polymer and converted to SiC. The other two approaches pursue the AM of CMCs. The first is binder jet SiC powder processing in collaboration with rp+m (Rapid Prototyping+Manufacturing). Processing optimization was pursued through SiC powder blending, infiltration with and without SiC nano powder loading, and integration of nanofibers into the powder bed. The second approach was laminated object manufacturing (LOM) in which fiber prepregs and laminates are cut to shape by a laser and stacked to form the desired part. Scanning electron microscopy was conducted on materials from all approaches with select approaches also characterized with XRD, TGA, and bend testing.

  4. 47 CFR 22.657 - Transmitter locations.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Transmitter locations. 22.657 Section 22.657 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) COMMON CARRIER SERVICES PUBLIC MOBILE SERVICES... effective radiated power (ERP) of the most powerful mobile transmitter(s) in the system: Mobile unit ERP...

  5. 47 CFR 101.513 - Transmitter power.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Transmitter power. 101.513 Section 101.513... SERVICES 24 GHz Service and Digital Electronic Message Service § 101.513 Transmitter power. The transmitter power will be governed by § 101.113. Further, each application must contain an analysis demonstrating...

  6. 47 CFR 80.215 - Transmitter power.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Transmitter power. 80.215 Section 80.215... MARITIME SERVICES General Technical Standards § 80.215 Transmitter power. (a) Transmitter power shown on the radio station authorization is the maximum power the licensee is authorized to use. Power is...

  7. 47 CFR 101.807 - Transmitter power.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Transmitter power. 101.807 Section 101.807... SERVICES Local Television Transmission Service § 101.807 Transmitter power. Stations in this service will not be authorized to use transmitters having a rated power output in excess of the limits set forth in...

  8. Introduction of nano-laminate Ti3SiC2 and SiC phases into Cf-C composite by liquid silicon infiltration method

    Directory of Open Access Journals (Sweden)

    Omid Yaghobizadeh

    2017-03-01

    Full Text Available The material Cf-C-SiC-Ti3SiC2 is promising for high temperature application. Due to the laminated structure and special properties, the Ti3SiC2 is one of the best reinforcements for Cf-C-SiC composites. In this paper, Cf-C-SiC-Ti3SiC2 composites were fabricated by liquid silicon infiltration (LSI method; the effect of the TiC amount on the various composites properties were studied. For samples with 0, 50 and 90 vol.% of TiC, the results show that bending strength are 168, 190, and 181 MPa; porosities are 3.2, 4.7, and 9%; the fracture toughness are 6.1, 8.9, and 7.8 MPa∙m1/2; interlaminar shear strength are 27, 36, and 30 MPa; the amount of the MAX phase are 0, 8.5, and 5.6 vol.%, respectively. These results show that amount of TiC is not the main effective parameter in synthesis of Ti3SiC2. The existence of carbon promotes the synthesis of Ti3SiC2 indicating that only sufficient carbon content can lead to the appearance of Ti3SiC2 in the LSI process.

  9. High Energy, Narrow Linewidth 1572nm Eryb-Fiber Based MOPA for a Multi-Aperture CO2 Trace-Gas Laser Space Transmitter

    Science.gov (United States)

    Engin, Doruk; Mathason, Brian; Stephen, Mark; Yu, Anthony; Cao, He; Fouron, Jean-Luc; Storm, Mark

    2016-01-01

    Accurate global measurements of tropospheric CO2 mixing ratios are needed to study CO2 emissions and CO2 exchange with the land and oceans. NASA Goddard Space Flight Center (GSFC) is developing a pulsed lidar approach for an integrated path differential absorption (IPDA) lidar to allow global measurements of atmospheric CO2 column densities from space. Our group has developed, and successfully flown, an airborne pulsed lidar instrument that uses two tunable pulsed laser transmitters allowing simultaneous measurement of a single CO2 absorption line in the 1570 nm band, absorption of an O2 line pair in the oxygen A-band (765 nm), range, and atmospheric backscatter profiles in the same path. Both lasers are pulsed at 10 kHz, and the two absorption line regions are sampled at typically a 300 Hz rate. A space-based version of this lidar must have a much larger lidar power-area product due to the x40 longer range and faster along track velocity compared to airborne instrument. Initial link budget analysis indicated that for a 400 km orbit, a 1.5 m diameter telescope and a 10 second integration time, a 2 mJ laser energy is required to attain the precision needed for each measurement. To meet this energy requirement, we have pursued parallel power scaling efforts to enable space-based lidar measurement of CO2 concentrations. These included a multiple aperture approach consists of multi-element large mode area fiber amplifiers and a single-aperture approach consists of a multi-pass Er:Yb:Phosphate glass based planar waveguide amplifier (PWA). In this paper we will present our laser amplifier design approaches and preliminary results.

  10. SYLRAMIC™ SiC fibers for CMC reinforcement

    Science.gov (United States)

    Jones, Richard E.; Petrak, Dan; Rabe, Jim; Szweda, Andy

    2000-12-01

    Dow Corning researchers developed SYLRAMIC SiC fiber specifically for use in ceramic-matrix composite (CMC) components for use in turbine engine hot sections where excellent thermal stability, high strength and high thermal conductivity are required. This is a stoichiometric SiC fiber with a high degree of crystallinity, high tensile strength, high tensile modulus and good thermal conductivity. Owing to the small diameter, this textile-grade fiber can be woven into 2-D and 3-D structures for CMC fabrication. These properties are also of high interest to the nuclear community. Some initial studies have shown that SYLRAMIC fiber shows very good dimensional stability in a neutron flux environment, which offers further encouragement. This paper will review the properties of SYLRAMIC SiC fiber and then present the properties of polymer impregnation and pyrolysis (PIP) processed CMC made with this fiber at Dow Corning. While these composites may not be directly applicable to applications of interest to this audience, we believe that the properties shown will give good evidence that the fiber should be suitable for high temperature structural applications in the nuclear arena.

  11. Applications, Prospects and Challenges of Silicon Carbide Junction Field Effect Transistor (SIC JFET

    Directory of Open Access Journals (Sweden)

    Frederick Ojiemhende Ehiagwina

    2016-09-01

    Full Text Available Properties of Silicon Carbide Junction Field Effect Transistor (SiC JFET such as high switching speed, low forward voltage drop and high temperature operation have attracted the interest of power electronic researchers and technologists, who for many years developed devices based on Silicon (Si.  A number of power system Engineers have made efforts to develop more robust equipment including circuits or modules with higher power density. However, it was realized that several available power semiconductor devices were approaching theoretical limits offered by Si material with respect to capability to block high voltage, provide low on-state voltage drop and switch at high frequencies. This paper presents an overview of the current applications of SiC JFET in circuits such as inverters, rectifiers and amplifiers. Other areas of application reviewed include; usage of the SiC JFET in pulse signal circuits and boost converters. Efforts directed toward mitigating the observed increase in electromagnetic interference were also discussed. It also presented some areas for further research, such as having more applications of SiC JFET in harsh, high temperature environment. More work is needed with regards to SiC JFET drivers so as to ensure stable and reliable operation, and reduction in the prices of SiC JFETs through mass production by industries.

  12. Synthesis of One-Dimensional SiC Nanostructures from a Glassy Buckypaper

    Energy Technology Data Exchange (ETDEWEB)

    Ding, Mengning; Star, Alexander

    2013-02-21

    A simple and scalable synthetic strategy was developed for the fabrication of one-dimensional SiC nanostructures - nanorods and nanowires. Thin sheets of single-walled carbon nanotubes (SWNTs) were prepared by vacuum filtration and were washed repeatedly with sodium silicate (Na₂SiO₃) solution. The resulting “glassy buckypaper” was heated at 1300 - 1500 °C under Ar/H₂ to allow a solid state reaction between C and Si precursors to form a variety of SiC nanostructures. The morphology and crystal structures of SiC nanorods and nanowires were characterized using scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM), energy dispersive xray spectroscopy (EDX), electron diffraction (ED) and x-ray diffraction (XRD) techniques. Furthermore, electrical conductance measurements were performed on SiC nanorods, demonstrating their potential applications in high-temperature sensors and control systems.

  13. Lateral boron distribution in polycrystalline SiC source materials

    DEFF Research Database (Denmark)

    Linnarsson, M. K.; Kaiser, M.; Liljedahl, R.

    2013-01-01

    Polycrystalline SiC containing boron and nitrogen are used in growth of fluorescent SiC for white LEDs. Two types of doped polycrystalline SiC have been studied in detail with secondary ion mass spectrometry: sintered SiC and poly-SiC prepared by sublimation in a physical vapor transport setup. T...

  14. In situ toughened SiC ceramics with Al-B-C additions and oxide-coated SiC platelet/SiC composites

    Energy Technology Data Exchange (ETDEWEB)

    Cao, J. [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering]|[Lawrence Berkeley National Lab., CA (United States). Materials Sciences Div.

    1996-12-01

    This work aimed at fabrication and characterization of high toughness SiC ceramics through the applications of in situ toughening and SiC platelet reinforcement. The processing-microstructure-property relations of hot pressed SiC with Al, B, and C additions (designated as ABC-SiC) were investigated. Through a liquid phase sintering mechanism, dense SiC was obtained by hot pressing at a temperature as low as 1,700 C with 3 wt% Al, 0.6 wt% B, and 2 wt% C additions. These sintering aids also enhanced the {beta}-to-{alpha} (3C-to-4H) phase transformation, which promoted SiC grains to grow into plate-like shapes. Under optimal processing conditions, the microstructure exhibited high-aspect-ratio plate-shaped grains with a thin (< 1 nm) Al-containing amorphous grain boundary film. The mechanical properties of the toughened SiC and the composites were evaluated in comparison with a commercial Hexoloy SiC under identical test conditions. The C-curve behavior was examined using the strength-indentation load relationship and compared with that directly measured using precracked compact tension specimens. The in situ toughened ABC-SiC exhibited much improved flaw tolerance and a significantly rising R-curve behavior. A steady-state toughness in excess of 9 MPam{sup 1/2} was recorded for the ABC-SiC in comparison to a single valued toughness below 3 MPam{sup 1/2} for the Hexoloy. Toughening in the ABC-SiC was mainly attributed to grain bridging and subsequent pullout of the plate-shaped grains. The high toughness ABC-SiC exhibited a bend strength of 650 MPa with a Weibull modulus of 19; in comparison, the commercial SiC showed a bend strength of 400 MPa with a Weibull modulus of 6. Higher fracture toughness was also achieved by the reinforcement of SiC platelets, encapsulated with alumina, yttria, or silica, in a SiC matrix.

  15. Josephson coupling in junctions made of monolayer graphene on SiC

    OpenAIRE

    Jouault, B.; Charpentier, S.; Massarotti, D.; Michon, A.; Paillet, M.; Huntzinger, J. -R.; Tiberj, A.; Zahab, A.; Bauch, T.; Lucignano, P.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

    2016-01-01

    Graphene on silicon carbide (SiC) has proved to be highly successful in Hall conductance quantization for its homogeneity at the centimetre scale. Robust Josephson coupling has been measured in co-planar diffusive Al/monololayer graphene/Al junctions. Graphene on SiC substrates is a concrete candidate to provide scalability of hybrid Josephson graphene/superconductor devices, giving also promise of ballistic propagation.

  16. Deposition of SiC thin films by PECVD

    CERN Document Server

    Cho, N I; Kim, C K

    1999-01-01

    The SiC films were deposited on Si substrate by the decomposition of CH sub 3 SiCl sub 3 (methylthrichlorosilane) molecules in a high frequency discharge field. From the Raman spectra, it is conjectured that the deposited film are formed into the polycrystalline structure. The photon absorption measurement reveal that the band gap of the electron energy state are to be 2.4 eV for SiC, and 2.6 eV for Si sub 0 sub . sub 4 C sub 0 sub . sub 6 , respectively. In the high power density regime, methyl-radicals decompose easily and increases the carbon concentration in plasma and result in the growing films.

  17. Surface functionalization and biomedical applications based on SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yakimova, R; Petoral, R M Jr; Yazdi, G R; Vahlberg, C; Spetz, A Lloyd; Uvdal, K [Department of Physics, Chemistry and Biology, Linkoeping University, SE-58183 Linkoeping (Sweden)

    2007-10-21

    The search for materials and systems, capable of operating long term under physiological conditions, has been a strategy for many research groups during the past years. Silicon carbide (SiC) is a material, which can meet the demands due to its high biocompatibility, high inertness to biological tissues and to aggressive environment, and the possibility to make all types of electronic devices. This paper reviews progress in biomedical and biosensor related research on SiC. For example, less biofouling and platelet aggregation when exposed to blood is taken advantage of in a variety of medical implantable materials while the robust semiconducting properties can be explored in surface functionalized bioelectronic devices. (review article)

  18. Integrated S-band transmitter with on-chip DC-DC converter and control loop

    NARCIS (Netherlands)

    Brouzes, H.; Geurts, S.; Besselink, M.; Telli, A.; Hek, A.P. de; Bent, G. van der; Vliet, F.E. van

    2012-01-01

    A highly integrated high-power transmitter has been designed in a high breakdown GaAs MMIC technology. The transmitter includes, on top of an S-Band 10 W class-F HPA, a DC/DC converter and its associated gate driver, the full voltage regulation control loop, which provides a significant step for

  19. Velcro-Inspired SiC Fuzzy Fibers for Aerospace Applications.

    Science.gov (United States)

    Hart, Amelia H C; Koizumi, Ryota; Hamel, John; Owuor, Peter Samora; Ito, Yusuke; Ozden, Sehmus; Bhowmick, Sanjit; Syed Amanulla, Syed Asif; Tsafack, Thierry; Keyshar, Kunttal; Mital, Rahul; Hurst, Janet; Vajtai, Robert; Tiwary, Chandra Sekhar; Ajayan, Pulickel M

    2017-04-19

    The most recent and innovative silicon carbide (SiC) fiber ceramic matrix composites, used for lightweight high-heat engine parts in aerospace applications, are woven, layered, and then surrounded by a SiC ceramic matrix composite (CMC). To further improve both the mechanical properties and thermal and oxidative resistance abilities of this material, SiC nanotubes and nanowires (SiCNT/NWs) are grown on the surface of the SiC fiber via carbon nanotube conversion. This conversion utilizes the shape memory synthesis (SMS) method, starting with carbon nanotube (CNT) growth on the SiC fiber surface, to capitalize on the ease of dense surface morphology optimization and the ability to effectively engineer the CNT-SiC fiber interface to create a secure nanotube-fiber attachment. Then, by converting the CNTs to SiCNT/NWs, the relative morphology, advantageous mechanical properties, and secure connection of the initial CNT-SiC fiber architecture are retained, with the addition of high temperature and oxidation resistance. The resultant SiCNT/NW-SiC fiber can be used inside the SiC ceramic matrix composite for a high-heat turbo engine part with longer fatigue life and higher temperature resistance. The differing sides of the woven SiCNT/NWs act as the "hook and loop" mechanism of Velcro but in much smaller scale.

  20. Light extraction efficiency enhancement for fluorescent SiC based white light-emitting diodes

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini

    Fluorescent SiC based white light-emitting diodes(LEDs) light source, as an innovative energy-efficient light source, would even have longer lifetime, better light quality and eliminated blue-tone effect, compared to the current phosphor based white LED light source. In this paper, the yellow....... At a device level, the focus is on improving the light extraction efficiency due to the rather high refractive index of SiC by nanostructuring the surface of SiC. Both periodic nanostructures made by e-beam lithography and nanosphere lithography and random nanostructures made by self-assembled Au nanosphere...... fluorescent Boron-Nitrogen co-doped 6H SiC is optimized in terms of source material, growth condition, dopant concentration, and carrier lifetime by using photoluminescence, pump-probe spectroscopy etc. The internal quantum efficiency is measured and the methods to increase the efficiency have been explored...

  1. Research Progress on Preparation for Biomass-based SiC Ceramic

    Directory of Open Access Journals (Sweden)

    CUI He-shuai

    2017-08-01

    Full Text Available Silicon carbide (SiC ceramics prepared by the conventional process has excellent properties and wide application prospects, but the increased cost of high-temperature preparation process restricts its further development. In contrast, the abundant porous structure of biomass makes itself to be ideal replacement of SiC ceramic prepared at low temperature. This paper reviewed the structure characteristics, preparation methods, pyrolysis mechanism and influence parameters of biomass-based SiC ceramic, and eventually explored the current problems and development trends of the pretreatment of carbon source and silicon source, the pyrolysis process and the application research on the preparation for biomass-based SiC ceramic.

  2. Large area SiC coating technology of RBSC for semiconductor processing component

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2001-06-01

    As the semiconductor process is developed for the larger area wafer and the larger-scale integration, the processing fixtures are required to have excellent mechanical and high temperature properties. This highlights the importance of silicon carbide-based materials as a substitute for quartz-based susceptors. In this study, SiC coating technology on reaction sintered (RS) SiC with thickness variation of +/- 10% within a diameter of 8 inch by low pressure chemical vapor deposition has been developed for making a plate type SiC fixture such as heater, baffle, etc., with a diameter of 12 inch. Additionally, a state of art on fabrication technology and products of the current commercial SiC fixtures has been described.

  3. Brazing of SiC using Cu-Si non reactive alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gasse, A. [C.E.A., CEREM-DEM, Grenoble (France); Chaumat, G. [C.E.A., CEREM-DEM, Grenoble (France); Rado, C. [INPG/LTCM-ENSEEG, Saint Martin d`Heres (France); Eustathopoulos, N. [INPG/LTCM-ENSEEG, Saint Martin d`Heres (France)

    1995-12-31

    SiC was brazed with a Cu 24 at% Si alloy under high vacuum at 1473 K. This alloy well wets SiC without any measurable reactivity and after cooling, leads to an interface which appears to be strong. It was found that the degree of filling of the joint by the alloy depends mainly on the geometry of the ceramic-metal-vapour system. It is shown that geometrical factors influence the kinetics of deoxidation of both alloys and SiC surfaces and, as a consequence, considerably modify the wetting kinetics and filling of the joint. Successful helium-tight tube/plate brazed joints have been obtained. Nevertheless, thermal expansion mismatch remains considerable between the SiC and the Cu-Si alloy. Further work is needed to improve the mechanical behaviour of such junctions to avoid crack formation. (orig./MM)

  4. 1 GHz, 200 C, SiC MESFET Clapp Oscillator

    Science.gov (United States)

    Ponchak, George E.; Schwartz, Zachary D.

    2005-01-01

    A SiC Clapp oscillator frabricated on an alumina substrate with chip capacitors and spiral inductors is designed for high temperature operation at 1 gigahertz. The oscillator operated from 30 to 200 C with an output power of 21.8 dBm at 1 gigahertz and 200 C. The efficiency at 200 C is 15 percent. The frequency variation over the temperature range is less than 0.5 percent.

  5. Preparation of biomorphic SiC ceramics

    Directory of Open Access Journals (Sweden)

    Egelja A.

    2008-01-01

    Full Text Available This paper deals with a new method for producing non-oxide ceramic using wood as a template. SiC with a woodlike microstructure has been prepared by carbothermal reduction reactions of Tilia wood/TEOS composite at 1873K. The porous carbon preform was infiltrated with TEOS (Si(OC2H54, as a source of silica, without pressure at 298K. The morphology of resulting porous SiC ceramics, as well as the conversion mechanism of wood to SiC ceramics, have been investigated by scanning electron microscopy (SEM/EDS and X-ray diffraction analysis (XRD. Obtained SiC ceramics consists of β-SiC with traces of α-SiC.

  6. POWDER INJECTION MOLDING OF SIC FOR THERMAL MANAGEMENT V

    Directory of Open Access Journals (Sweden)

    Valmikanathan Onbattuvelli

    2012-06-01

    Full Text Available Silicon carbide (SiC exhibits many functional properties that are relevant to applications in electronics, aerospace, defense and automotive industries. However, the successful translation of these properties into final applications lies in the net-shaping of ceramics into fully dense microstructures. Increasing the packing density of the starting powders is one effective route to achieve high sintered density and dimensional precision. The present paper presents an in-depth study on the effects of nanoparticle addition on the powder injection molding process (PIM of SiC powder-polymer mixtures. In particular, bimodal mixtures of nanoscale and sub-micrometer particles are found to have significantly increased powder packing characteristics (solids loading in the powder-polymer mixtures. The influence of nanoparticle addition on the multi-step PIM process is examined. The above results provide new perspectives which could impact a wide range of materials, powder processing techniques and applications.

  7. Structure of MnSi on SiC(0001)

    Science.gov (United States)

    Meynell, S. A.; Spitzig, A.; Edwards, B.; Robertson, M. D.; Kalliecharan, D.; Kreplak, L.; Monchesky, T. L.

    2016-11-01

    We report on the growth and magnetoresistance of MnSi films grown on SiC(0001) by molecular beam epitaxy. The growth resulted in a textured MnSi(111) film with a predominantly [1 1 ¯0 ] MnSi (111 )∥[11 2 ¯0 ] SiC(0001) epitaxial relationship, as demonstrated by transmission electron microscopy, reflection high energy electron diffraction, and atomic force microscopy. The 500 ∘C temperature required to crystallize the film leads to a dewetting of the MnSi layer. Although the sign of the lattice mismatch suggested the films would be under compressive stress, the films acquire an in-plane tensile strain likely driven by the difference in thermal expansion coefficients between the film and substrate during annealing. As a result, the magnetoresistive response demonstrates that the films possess a hard-axis out-of-plane magnetocrystalline anisotropy.

  8. A 100 – 800MHz 8-Path polyphase transmitter with mixer duty-cycle control achieving

    NARCIS (Netherlands)

    Subhan, S.; Klumperink, Eric A.M.; Ghaffari, A.; Wienk, Gerhardus J.M.; Nauta, Bram

    2014-01-01

    Radio transceivers capable of dynamic spectrum access require frequency agile transmitters with a clean output spectrum. High-Q filters are difficult to implement on chip and have limited tuning range. Transmitters with high linearity and broadband harmonic rejection can be more flexible and require

  9. Autoregressive smoothing of GOMOS transmittances

    Science.gov (United States)

    Fussen, D.; Vanhellemont, F.; Bingen, C.; Kyrölä, B.; Tamminen, J.; Sofieva, V.; Hassinen, S.; Seppälä, A.; Verronen, P. T.; Bertaux, J. L.; Hauchecorne, A.; Dalaudier, F.; d'Andon, O. Fanton; Barrot, G.; Mangin, A.; Theodore, B.; Guirlet, M.; Renard, J. B.; Fraisse, R.; Snoeij, P.; Koopman, R.; Saavedra, L.

    GOMOS is a stellar occultation instrument onboard ENVISAT. It has already measured several hundreds of thousands occultations since March 2002. In some circumstances, the obliqueness of the star setting causes the remote sounding of possible horizontal turbulence that cannot be adequately corrected by using the fast photometer signals, leading to the presence of residual scintillation in the atmospheric transmittance. We investigate the mechanism that produces this spurious signal that may cause the retrieval of wavy constituent profiles. A special algorithm of vertical autoregressive smoothing (VAS) is proposed that takes into account the physical correlation between adjacent measurements at different tangent altitudes. A regularization parameter of the method may be optimized on basis of the minimal correlation between the residuals as prescribed by the Durbin-Watson statistics. The improvements obtained in the retrieval of both O 3 and NO 2 number density profiles is presented and discussed with respect to the results of the official data processing model.

  10. 50 mJ Monolithic 2 um Pulsed Fiber Laser Transmitter in 200 ns Regime with Transform-Limited Linewidth Based on Highly Tm-Doped Germanate Fibers Project

    Data.gov (United States)

    National Aeronautics and Space Administration — For NASA's various types of coherent LIDAR applications, NP Photonics propose to develop a 50 mJ monolithic 2 micron pulsed fiber laser transmitter in 200 ns regime...

  11. Atomic probe microscopy of 3C SiC films grown on 6H SiC substrates

    Science.gov (United States)

    Steckl, A. J.; Roth, M. D.; Powell, J. A.; Larkin, D. J.

    1993-01-01

    The surface of 3C SiC films grown on 6H SiC substrates has been studied by atomic probe microscopy in air. Atomic-scale images of the 3C SiC surface have been obtained by STM which confirm the 111 line type orientation of the cubic 3C layer grown on the 0001 plane type surface of the hexagonal 6H substrate. The nearest-neighbor atomic spacing for the 3C layer has been measured to be 3.29 +/- 0.2 A, which is within 7 percent of the bulk value. Shallow terraces in the 3C layer have been observed by STM to separate regions of very smooth growth in the vicinity of the 3C nucleation point from considerably rougher 3C surface regions. These terraces are oriented at right angles to the growth direction. Atomic force microscopy has been used to study etch pits present on the 6H substrate due to high temperature HCl cleaning prior to CVD growth of the 3C layer. The etch pits have hexagonal symmetry and vary in depth from 50 nm to 1 micron.

  12. SPHERICAL INDENTATION OF SiC

    Energy Technology Data Exchange (ETDEWEB)

    Wereszczak, Andrew A [ORNL; Johanns, Kurt E [ORNL

    2007-01-01

    Instrumented Hertzian indentation testing was performed on several grades of SiCs and the results and preliminary interpretations are presented. The grades included hot-pressed and sintered compositions. One of the hot-pressed grades was additionally subjected to high temperature heat treatment to produce a coarsened grain microstructure to enable the examination of exaggerated grain size on indentation response. Diamond spherical indenters were used in the testing. Indentation load, indentation depth of penetration, and acoustic activity were continually measured during each indentation test. Indentation response and postmortem analysis of induced damage (e.g., ring/cone, radial and median cracking, quasi-plasticity) are compared and qualitatively as a function of grain size. For the case of SiC-N, the instrumented spherical indentation showed that yielding initiated at an average contact stress 12-13 GPa and that there was another event (i.e., a noticeable rate increase in compliance probably associated with extensive ring and radial crack formations) occurring around an estimated average contact stress of 19 GPa.

  13. 47 CFR 15.212 - Modular transmitters.

    Science.gov (United States)

    2010-10-01

    ... radiofrequency transmitter device that is typically incorporated into another product, host or device. Split... transmitter control element (or specific hardware on which the software that controls the radio operation... powered, it must comply with the AC line conducted requirements found in § 15.207. AC or DC power lines...

  14. 77 FR 1779 - Emergency Locator Transmitters (ELTs)

    Science.gov (United States)

    2012-01-11

    ... Locator Transmitter (ELT) Equipment. SUMMARY: This notice announces the FAA's intent to cancel TSO-C91a, Emergency Locator Transmitter (ELT) Equipment. The effect of the cancelled TSO will result in no new TSO... the 14 Code of ] Federal Regulation (14 CFR) Sec. 91.207 ELT equipage requirement. DATES: Comments...

  15. 47 CFR 80.911 - VHF transmitter.

    Science.gov (United States)

    2010-10-01

    ... MARITIME SERVICES Compulsory Radiotelephone Installations for Small Passenger Boats § 80.911 VHF..., measured at the power input terminals to the transmitter, and the output power of the transmitter, terminated in a matching artificial load, must be measured at the end of 10 minutes of continuous operation...

  16. A review of SiC reactive ion etching in fluorinated plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Yih, P.H. [Bell Labs., Orlando, FL (United States). Lucent Technologies; Saxena, V.; Steckl, A.J. [Cincinnati Univ., OH (United States). Dept. of Electrical and Computer Engineering

    1997-07-01

    Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC devices include high power and high temperature devices and light emitting diodes. Due to the strong bonding between Si and C (Si-C = 1.34 x Si-Si), wet chemical etching can only be performed at high temperature. Therefore, plasma-based (``dry``) etching plays the crucial role of patterning SiC for the fabrication of various electronic devices. In the past several years, reactive ion etching (RIE) of SiC polytypes (3C and 6H) has been investigated in fluorinated gases (primarily CHF{sub 3}, CBrF{sub 3}, CF{sub 4}, SF{sub 6}, and NF{sub 3}), usually mixed with oxygen and occasionally with other additives or in a mixture of fluorinated gases. In this paper, a review of SiC RIE is presented. The primary emphasis is on etching of the 3C and 6H polytypes, but some results on RIE of the 4H polytype are included. The paper covers the basic etching mechanisms, provides typical etching properties in selected plasma conditions, discusses the effects of changes in various etching parameters, such as plasma pressure, density and power, etching time, etc. The etching of features of sizes varying from sub-{mu}m to tens of {mu}m`s is addressed. Finally, optimum etching conditions and trade-offs are considered for various device configurations. (orig.) 122 refs.

  17. A Review of SiC Reactive Ion Etching in Fluorinated Plasmas

    Science.gov (United States)

    Yih, P. H.; Saxena, V.; Steckl, A. J.

    1997-07-01

    Research and development in semiconducting silicon carbide (SiC) technology has produced significant progress in the past five years in many areas: material (bulk and thin film) growth, device fabrication, and applications. A major factor in this rapid growth has been the development of SiC bulk crystals and the availability of crystalline substrates. Current leading applications for SiC devices include high power and high temperature devices and light emitting diodes. Due to the strong bonding between Si and C (Si-C = 1.34×Si-Si), wet chemical etching can only be performed at high temperature. Therefore, plasma-based (dry) etching plays the crucial role of patterning SiC for the fabrication of various electronic devices. In the past several years, reactive ion etching (RIE) of SiC polytypes (3C and 6H) has been investigated in fluorinated gases (primarily CHF3, CBrF3, CF4, SF6, and NF3), usually mixed with oxygen and occasionally with other additives or in a mixture of fluorinated gases. In this paper, a review of SiC RIE is presented. The primary emphasis is on etching of the 3C and 6H polytypes, but some results on RIE of the 4H polytype are included. The paper covers the basic etching mechanisms, provides typical etching properties in selected plasma conditions, discusses the effects of changes in various etching parameters, such as plasma pressure, density and power, etching time, etc. The etching of features of sizes varying from sub-m to tens of μm's is addressed. Finally, optimum etching conditions and trade-offs are considered for various device configurations.

  18. Compact, highly efficient, athermal, 25W, 2051nm Tm-fiber based MOPA for CO2 trace-gas laser space transmitter

    Science.gov (United States)

    Engin, Doruk; Chuang, Ti; Storm, Mark

    2017-02-01

    A cladding-pumped polarization maintaining (PM) Thulium (Tm) fiber-based amplifier optimized for high efficiency and high power operation at 2051 nm is presented. The two-stage amplifier has been demonstrated to achieve 25 W average power, >16 dB polarization extinction ratio (PER) out of a single-mode PM fiber using a <500 kHz linewidth Jet Propulsion Laboratory (JPL) distributed feedback (DFB) laser1-3 and 43 dB gain. The power amplifier's optical conversion efficiency is 53%. An internal efficiency of 58% is calculated after correcting for passive losses. The two-stage amplifier sustains its highly efficient operation for a temperature range of 5-40°C. The absence of stimulated Brillouin scattering (SBS) for the narrow linewidth amplification shows promise for further power scaling.

  19. High frequency characteristic of a monolithic 500 °C OpAmp-RC integrator in SiC bipolar IC technology

    Science.gov (United States)

    Tian, Ye; Zetterling, Carl-Mikael

    2017-09-01

    This paper presents a comprehensive investigation of the frequency response of a monolithic OpAmp-RC integrator implemented in a 4H-SiC bipolar IC technology. The circuits and devices have been measured and characterized from 27 to 500 °C. The devices have been modelled to identify that the substrate capacitance is a dominant factor affecting the OpAmp's high-frequency response. Large Miller compensation capacitors of more than 540 pF are required to ensure stability of the internal OpAmp. The measured unit-gain-bandwidth product of the OpAmp is ∼1.1 MHz at 27 °C, and decreases to ∼0.5 MHz at 500 °C mainly due to the reduction of the transistor's current gain. On the other hand, it is not necessary to compensate the integrator in a relatively wide bandwidth ∼0.7 MHz over the investigated temperature range. At higher frequencies, the integrator's frequency response has been identified to be significantly affected by that of the OpAmp and load impedance. This work demonstrates the potential of this technology for high temperature applications requiring bandwidths of several megahertz.

  20. Magnetism in nanocrystalline SiC films

    Science.gov (United States)

    Semenov, A. V.; Pashchenko, V. O.; Khirnyi, V. F.; Kozlovskyi, A. A.; Mateichenko, P. V.

    2015-11-01

    Magnetism been studied in two series of nanocrystalline SiC films obtained by the method of direct deposition of ions with an energy of ~100 eV at temperatures 1150 °C and 1200 C. There were separated the contributions of diamagnetism, paramagnetism and superparamagnetism+ferromagnetism. Magnetization value of the films correlates with the deposition temperature. In the films deposited at higher temperatures the value of magnetization was by 1.5 times lower. It was concluded that induced magnetism in nanocrystalline SiC films is caused by interaction of magnetic moments of neutral VSiVC divacancies in separate nanocrystals. The estimated concentration of neutral VSiVC divacancies in nanocrystalline SiC films is ~1020 cm-3.

  1. The benefits and current progress of SiC SGTOs for pulsed power applications

    Science.gov (United States)

    Ogunniyi, Aderinto; O'Brien, Heather; Lelis, Aivars; Scozzie, Charles; Shaheen, William; Agarwal, Anant; Zhang, Jon; Callanan, Robert; Temple, Victor

    2010-10-01

    Silicon Carbide (SiC) is an extremely attractive material for semiconductor power devices because of its electrical and physical characteristics. This paper describes the benefits of utilizing SiC Super Gate Turn-Off thyristors (SGTO) in pulsed power applications, reviews the current progress and development of SiC GTOs, and presents the static and pulsed characteristics of large area GTOs with high blocking capabilities. The wide pulsed evaluation of the 0.5 cm 2 SiC SGTOs has been demonstrated and reported by the Army Research Laboratory (ARL). This paper presents the wide pulsed capabilities of the 1 cm 2 SiC SGTOs. The 1 cm 2 SiC SGTO devices handled up to twice the peak current of the 0.5 cm 2 SiC SGTOs at a 1 ms pulse width. The wide pulsed evaluation of these devices was demonstrated at ARL. ARL evaluated the static and pulsed characteristics of six of these devices. The devices had a forward blocking voltage rating of 9 kV and a trigger requirement of a negative pulse of 1 A to the gate for a millisecond pulse width. These devices were pulsed as high as 3.5 kA at 1 ms, equating to an action rate of 6 × 10 3 A 2 s and a current density of 4.8 kA/cm 2, based on the device active area. The narrow pulsed evaluation of this device has been demonstrated by Cree Inc. A peak current of 12.8 kA with a pulse width of 17 μs (corresponding to 12.8 kA/cm 2 based on the chip size) was conducted with this device.

  2. SiC Optically Modulated Field-Effect Transistor

    Science.gov (United States)

    Tabib-Azar, Massood

    2009-01-01

    An optically modulated field-effect transistor (OFET) based on a silicon carbide junction field-effect transistor (JFET) is under study as, potentially, a prototype of devices that could be useful for detecting ultraviolet light. The SiC OFET is an experimental device that is one of several devices, including commercial and experimental photodiodes, that were initially evaluated as detectors of ultraviolet light from combustion and that could be incorporated into SiC integrated circuits to be designed to function as combustion sensors. The ultraviolet-detection sensitivity of the photodiodes was found to be less than desired, such that it would be necessary to process their outputs using high-gain amplification circuitry. On the other hand, in principle, the function of the OFET could be characterized as a combination of detection and amplification. In effect, its sensitivity could be considerably greater than that of a photodiode, such that the need for amplification external to the photodetector could be reduced or eliminated. The experimental SiC OFET was made by processes similar to JFET-fabrication processes developed at Glenn Research Center. The gate of the OFET is very long, wide, and thin, relative to the gates of typical prior SiC JFETs. Unlike in prior SiC FETs, the gate is almost completely transparent to near-ultraviolet and visible light. More specifically: The OFET includes a p+ gate layer less than 1/4 m thick, through which photons can be transported efficiently to the p+/p body interface. The gate is relatively long and wide (about 0.5 by 0.5 mm), such that holes generated at the body interface form a depletion layer that modulates the conductivity of the channel between the drain and the source. The exact physical mechanism of modulation of conductivity is a subject of continuing research. It is known that injection of minority charge carriers (in this case, holes) at the interface exerts a strong effect on the channel, resulting in amplification

  3. Elaboration of silicon carbides nano particles (SiC): from the powder synthesis to the sintered ceramic; Elaboration de ceramiques nanostructurees en carbure de silicium (SiC): de la synthese de poudre a la ceramique frittee

    Energy Technology Data Exchange (ETDEWEB)

    Reau, A. [CEA Saclay, Dept. des Materiaux pour le Nucleaire (DEN/DANS/DMN/SRMA), 91 - Gif-sur-Yvette (France)

    2008-07-01

    Materials for the reactor cores of the fourth generation will need materials supporting high temperatures with fast neutrons flux. SiC{sub f}/SiC ceramics are proposed. One of the possible elaboration process is to fill SiC fiber piece with nano particles SiC powder and to strengthen by sintering. The aim of this thesis is to obtain a nano structured SiC ceramic as a reference for the SiC{sub f}/SiC composite development and to study the influence of the fabrication parameters. (A.L.B.)

  4. Compact, highly efficient, single-frequency 25W, 2051nm Tm fiber-based MOPA for CO2 trace-gas laser space transmitter

    Science.gov (United States)

    Engin, Doruk; Chuang, Ti; Litvinovitch, Slava; Storm, Mark

    2017-08-01

    Fibertek has developed and demonstrated an ideal high-power; low-risk; low-size, weight, and power (SWaP) 2051 nm laser design meeting the lidar requirements for satellite-based global measurement of carbon dioxide (CO2). The laser design provides a path to space for either a coherent lidar approach being developed by NASA Jet Propulsion Laboratory (JPL)1,2 or an Integrated Path Differential Lidar (IPDA) approach developed by Harris Corp using radio frequency (RF) modulation and being flown as part of a NASA Earth Venture Suborbital Mission—NASA's Atmospheric Carbon and Transport - America.3,4 The thulium (Tm) fiber laser amplifies a design manages and suppresses all deleterious non-linear effects that can cause linewidth broadening or amplified spontaneous emission (ASE) and meets all lidar requirements. We believe the core laser components, architecture, and design margins can support a coherent or IPDA lidar 10-year space mission. With follow-on funding Fibertek can adapt an existing space-based Technology Readiness Level 6 (TRL-6), 20 W erbium fiber laser package for this Tm design and enable a near-term space mission with an electrical-to-optical (e-o) efficiency of <20%. A cladding-pumped PM Tm fiber-based amplifier optimized for high efficiency and high-power operation at 2051 nm is presented. The two-stage amplifier has been demonstrated to achieve 25 W average power and <16 dB polarization extinction ratio (PER) out of a single-mode PM fiber using a <500 kHz linewidth JPL DFB laser5-7 and 43 dB gain. The power amplifier's optical conversion efficiency is 53%. An internal efficiency of 58% is calculated after correcting for passive losses. The two-stage amplifier sustains its highly efficient operation for a temperature range of 5-40°C. The absence of stimulated Brillouin scattering (SBS) for the narrow linewidth amplification shows promise for further power scaling.

  5. Prospects for SiC electronics and sensors

    OpenAIRE

    Nick G. Wright; Alton B. Horsfall; Vassilevski, Konstantin

    2008-01-01

    There has been substantial international research effort in the development of SiC electronics over the last ten years. With promising applications in power electronics, hostile-environment electronics, and sensors, there is considerable industrial interest in SiC as a material for electronics. However, issues relating to crystal growth and the difficulties of material processing have restricted SiC devices to relatively limited use to date. The eventual success of SiC as an electronic techno...

  6. Microwave joining of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Silberglitt, R.; Ahmad, I.; Tian, Y.L. [FM Technologies, Inc., Fairfax, VA (United States)] [and others

    1997-04-01

    The purpose of this work is to optimize the properties of SiC-SiC joints made using microwave energy. The current focus is on identification of the most effective joining methods for scale-up to large tube assemblies, including joining using SiC produced in situ from chemical precursors. During FY 1996, a new microwave applicator was designed, fabricated and tested that provides the capability for vacuum baking of the specimens and insulation and for processing under inert environment. This applicator was used to join continuous fiber-reinforced (CFCC) SiC/SiC composites using a polymer precursor to form a SiC interlayer in situ.

  7. Modeling NDT piezoelectric ultrasonic transmitters.

    Science.gov (United States)

    San Emeterio, J L; Ramos, A; Sanz, P T; Ruíz, A; Azbaid, A

    2004-04-01

    Ultrasonic NDT applications are frequently based on the spike excitation of piezoelectric transducers by means of efficient pulsers which usually include a power switching device (e.g. SCR or MOS-FET) and some rectifier components. In this paper we present an approximate frequency domain electro-acoustic model for pulsed piezoelectric ultrasonic transmitters which, by integrating partial models of the different stages (driving electronics, tuning/matching networks and broadband piezoelectric transducer), allows the computation of the emission transfer function and output force temporal waveform. An approximate frequency domain model is used for the evaluation of the electrical driving pulse from the spike generator. Tuning circuits, interconnecting cable and mechanical impedance matching layers are modeled by means of transmission lines and the classical quadripole approach. The KLM model is used for the piezoelectric transducer. In addition, a PSPICE scheme is used for an alternative simulation of the broadband driving spike, including the accurate evaluation of non-linear driving effects. Several examples illustrate the capabilities of the specifically developed software.

  8. SiC JFET Transistor Circuit Model for Extreme Temperature Range

    Science.gov (United States)

    Neudeck, Philip G.

    2008-01-01

    A technique for simulating extreme-temperature operation of integrated circuits that incorporate silicon carbide (SiC) junction field-effect transistors (JFETs) has been developed. The technique involves modification of NGSPICE, which is an open-source version of the popular Simulation Program with Integrated Circuit Emphasis (SPICE) general-purpose analog-integrated-circuit-simulating software. NGSPICE in its unmodified form is used for simulating and designing circuits made from silicon-based transistors that operate at or near room temperature. Two rapid modifications of NGSPICE source code enable SiC JFETs to be simulated to 500 C using the well-known Level 1 model for silicon metal oxide semiconductor field-effect transistors (MOSFETs). First, the default value of the MOSFET surface potential must be changed. In the unmodified source code, this parameter has a value of 0.6, which corresponds to slightly more than half the bandgap of silicon. In NGSPICE modified to simulate SiC JFETs, this parameter is changed to a value of 1.6, corresponding to slightly more than half the bandgap of SiC. The second modification consists of changing the temperature dependence of MOSFET transconductance and saturation parameters. The unmodified NGSPICE source code implements a T(sup -1.5) temperature dependence for these parameters. In order to mimic the temperature behavior of experimental SiC JFETs, a T(sup -1.3) temperature dependence must be implemented in the NGSPICE source code. Following these two simple modifications, the Level 1 MOSFET model of the NGSPICE circuit simulation program reasonably approximates the measured high-temperature behavior of experimental SiC JFETs properly operated with zero or reverse bias applied to the gate terminal. Modification of additional silicon parameters in the NGSPICE source code was not necessary to model experimental SiC JFET current-voltage performance across the entire temperature range from 25 to 500 C.

  9. Extreme Environment SiC Wireless Sensor Suite for Nuclear Thermal Propulsion Engines Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this program, APEI, Inc. will build on successful demonstrations of SiC-based wireless transmitter designs in high temperature and high mechanical load...

  10. Fabrication of mullite-bonded porous SiC ceramics from multilayer-coated SiC particles through sol-gel and in-situ polymerization techniques

    Science.gov (United States)

    Ebrahimpour, Omid

    second part of the project. Alumina sol was synthesized by the hydrolysis of Aluminum isopropoxide using the Yoldas method. Alumina sol was homogenous and had a needle-like shape with a thickness of 2--3 nm. Crystalline changes during the heating process of alumina sol were studied using XRD. In addition, Fourier transform infrared (FTIR) spectroscopy was performed to identify the functional groups on the alumina sol surface as a function of temperature. In the third part of the project, the feasibility of the in-situ polymerization technique was investigated to fabricate porous SiC ceramics. In this part, the mixture of SiC and calcined alumina powders were coated by polyethylene via in-situ polymerizing referred to as the polymerization compounding process in a slurry phase. The polymerization was conducted under very moderate operational conditions using the Ziegler-Natta catalyst system. Differential scanning calorimetry (DSC) and TGA analysis and morphological studies (SEM and TEM) revealed the presence of a high density of polyethylene on the surface of SiC and alumina powders. The amount of polymer was controlled by the polymerization reaction time. Most parts of particles were coated by a thin layer of polyethylene and polymer. The porous SiC ceramics, which were fabricated by these treated particles showed higher mechanical and physical properties compared to the samples made without any treatment. The relative intensity of mullite was higher compared to the samples prepared by the traditional process. The effects of the sintering temperature, forming pressure and polymer content were also studied on the physical and mechanical properties of the final product. In the last phase of this research work, the focus of the investigation was to take advantage of both the sol-gel processing and in-situ polymerization method to develop a new process to manufacture mullite-bonded porous SiC ceramic with enhanced mechanical and physical properties. Therefore, first the SiC

  11. White light emission from fluorescent SiC with porous surface

    DEFF Research Database (Denmark)

    Lu, Weifang; Ou, Yiyu; Fiordaliso, Elisabetta Maria

    2017-01-01

    We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3, the photol......We report for the frst time a NUV light to white light conversion in a N-B co-doped 6H-SiC (fuorescent SiC) layer containing a hybrid structure. The surface of fuorescent SiC sample contains porous structures fabricated by anodic oxidation method. After passivation by 20nm thick Al2O3......, the photoluminescence intensity from the porous layer was signifcant enhanced by a factor of more than 12. Using a porous layer of moderate thickness (~10µm), high-quality white light emission was realized by combining the independent emissions of blue-green emission from the porous layer and yellow emission from...... the bulk fuorescent SiC layer. A high color rendering index of 81.1 has been achieved. Photoluminescence spectra in porous layers fabricated in both commercial n-type and lab grown N-B co-doped 6H-SiC show two emission peaks centered approximately at 460nm and 530nm. Such bluegreen emission phenomenon can...

  12. Optimisation of radio transmitter locations in mobile telecommunications networks

    Directory of Open Access Journals (Sweden)

    Schmidt-Dumont, Thorsten

    2016-08-01

    Full Text Available Multiple factors have to be taken into account when mobile telecommunication network providers make decisions about radio transmitter placement. Generally, area coverage and the average signal level provided are of prime importance in these decisions. These criteria give rise to a bi-objective problem of facility location, with the goal of achieving an acceptable trade-off between maximising the total area coverage and maximising the average signal level provided to the demand region by a network of radio transmitters. This paper establishes a mathematical modelling framework, based on these two placement criteria, for evaluating the effectiveness of a given set of radio transmitter locations. In the framework, coverage is measured according to the degree of obstruction of the so-called ‘Fresnel zone’ that is formed between handset and base station, while signal strength is modelled taking radio wave propagation loss into account. This framework is used to formulate a novel bi-objective facility location model that may form the basis for decision support aimed at identifying high-quality transmitter location trade-off solutions for mobile telecommunication network providers. But it may also find application in various other contexts (such as radar, watchtower, or surveillance camera placement optimisation.

  13. SiC fibre by chemical vapour deposition on tungsten filament

    Indian Academy of Sciences (India)

    Unknown

    Jones 1975). The next generation aircraft engines need lighter high performance structural materials with high temperature capabilities (Sorensen 1993). ... 1997). Ti–6Al–4V/sigma-1240(SiC) composites exhibit a high elastic stiffness (axial elastic modulus above 200 GPa) and fracture strength (UTS ≈ 1⋅8 GPa) and a ...

  14. Wireless heterogeneous transmitter placement using multiobjective variable-length genetic algorithm.

    Science.gov (United States)

    Ting, Chuan-Kang; Lee, Chung-Nan; Chang, Hui-Chun; Wu, Jain-Shing

    2009-08-01

    The problem of placing wireless transmitters to meet particular objectives, such as coverage and cost, has proven to be NP-hard. Furthermore, the heterogeneity of wireless networks makes the problem more intractable to deal with. This paper presents a novel multiobjective variable-length genetic algorithm to solve this problem. One does not need to determine the number of transmitters beforehand; the proposed algorithm simultaneously searches for the optimal number, types, and positions of heterogeneous transmitters by considering coverage, cost, capacity, and overlap. The proposed algorithm can achieve the optimal number of transmitters with coverage exceeding 98% on average for six benchmarks. These preferable experimental results demonstrate the high capability of the proposed algorithm for the wireless heterogeneous transmitter placement problem.

  15. A porous SiC ammonia sensor

    NARCIS (Netherlands)

    Connolly, E.J.; Timmer, B.H.; Pham, H.T.M.; Groeneweg, J.; Sarro, P.M.; Olthuis, Wouter; French, P.J.

    2005-01-01

    When used as the dielectric in a capacitive sensing arrangement, porous SiC has been found to be extremely sensitive to the presence of ammonia (NH3) gas. The exact sensing method is still not clear, but NH3 levels as low as 0.5 ppm could be detected. We report the fabrication and preliminary

  16. High Accuracy Dual Lens Transmittance Measurements

    Science.gov (United States)

    2007-08-01

    measurement of lens transmission,” Metrologia 37, 603–605 (2000). 3. B. Munro, “Quantum information processing with light and its requirement for detectors...5. N. P. Fox, “Trap detectors and their properties,” Metrologia 28, 197–202 (1991). 5402 APPLIED OPTICS Vol. 46, No. 22 1 August 2007 6. S. L

  17. High Efficiency mm-Wave Transmitter Array

    Science.gov (United States)

    2016-09-01

    On- chip power combining using various transmission line and balun approaches was also demonstrated; SiGe HBT amplifiers were designed and measured... lines as well as metal finger capacitors. The amplifiers were implemented in a 45-nm CMOS silicon-on- insulator (SOI) process. Each of the amplifiers...capacitances within the transmission lines . The unit amplifiers are based on cascode cells. Record output power at 125 GHz was obtained, up to 22dBm

  18. Fluorescent SiC with pseudo-periodic moth-eye structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Aijaz, Imran; Ou, Haiyan

    2012-01-01

    White light-emitting diodes (LEDs) consisting of a nitride-based blue LED chip and phosphor are very promising candidates for the general lighting applications as energy-saving sources. Recently, donor-acceptor doped fluorescent SiC has been proven as a highly efficient wavelength converter...... material much superior to the phosphors in terms of high color rendering index value and long lifetime. The light extraction efficiency of the fluorescent SiC based all semiconductor LED light sources is usually low due to the large refractive index difference between the semiconductor and air. In order......-eye structure as an effective and simple method to enhance the extraction efficiency of fluorescent SiC based white LEDs.© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only....

  19. System for the growth of bulk SiC crystals by modified CVD techniques

    Science.gov (United States)

    Steckl, Andrew J.

    1994-01-01

    The goal of this program was the development of a SiC CVD growth of films thick enough to be useful as pseudo-substrates. The cold-walled CVD system was designed, assembled, and tested. Extrapolating from preliminary evaluation of SiC films grown in the system at relatively low temperatures indicates that the growth rate at the final temperatures will be high enough to make our approach practical. Modifications of the system to allow high temperature growth and cleaner growth conditions are in progress. This program was jointly funded by Wright Laboratory, Materials Directorate and NASA LeRC and monitored by NASA.

  20. CVD solutions for new directions in SiC and GaN epitaxy

    OpenAIRE

    Li, Xun

    2015-01-01

    This thesis aims to develop a chemical vapor deposition (CVD) process for the new directions in both silicon carbon (SiC) and gallium nitride (GaN) epitaxial growth. The properties of the grown epitaxial layers are investigated in detail in order to have a deep understanding. SiC is a promising wide band gap semiconductor material which could be utilized for fabricating high-power and high-frequency devices. 3C-SiC is the only polytype with a cubic structure and has superior physical properti...

  1. A VLF transmitter on the Space Shuttle

    Science.gov (United States)

    Inan, U. S.; Bell, T. F.; Helliwell, R. A.; Katsufrakis, K. P.

    The use of space-borne transmitters for the study of interactions of energetic radiation belt particles and coherent plasma waves in the earth's magnetosphere has been considered. The proposed Space Shuttle/Space Lab system would provide a useful VLF transmitter platform since it can lift the required large payloads into orbit, erect long antennas, supply the electrical power required, and provide real-time control. A study is conducted of the power budget of such a VLF transmitter in an attempt to assess the feasibility of the experiment. It is found that a 1-10 kW transmitter placed on the Space Shuttle/Space Lab system can inject from one watt to up to a few kilowatts of wave power into the whistler mode. Recent results of ground-based VLF wave-injection experiments show that such power levels would be more than enough for initiating nonlinear wave growth and amplification and emission triggering in the magnetosphere.

  2. World War II Weather Record Transmittances

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — World War II Weather Record Transmittances are a record of the weather and meteorological data observed during World War II and transferred to the archive. It...

  3. Quantum Communications Transmitter at 775 nm Project

    Data.gov (United States)

    National Aeronautics and Space Administration — We propose a novel new architecture for a quantum communications laser transmitter that is designed for free-space polarization encoded quantum key distribution...

  4. Light and Strong Hierarchical Porous SiC Foam for Efficient Electromagnetic Interference Shielding and Thermal Insulation at Elevated Temperatures.

    Science.gov (United States)

    Liang, Caiyun; Wang, Zhenfeng; Wu, Lina; Zhang, Xiaochen; Wang, Huan; Wang, Zhijiang

    2017-09-06

    A novel light but strong SiC foam with hierarchical porous architecture was fabricated by using dough as raw material via carbonization followed by carbothermal reduction with silicon source. A significant synergistic effect is achieved by embedding meso- and nanopores in a microsized porous skeleton, which endows the SiC foam with high-performance electromagnetic interference (EMI) shielding, thermal insulation, and mechanical properties. The microsized skeleton withstands high stress. The meso- and nanosized pores enhance multiple reflection of the incident electromagnetic waves and elongate the path of heat transfer. For the hierarchical porous SiC foam with 72.8% porosity, EMI shielding can be higher than 20 dB, and specific EMI effectiveness exceeds 24.8 dB·cm3·g-1 at a frequency of 11 GHz at 25-600 °C, which is 3 times higher than that of dense SiC ceramic. The thermal conductivity reaches as low as 0.02 W·m-1·K-1, which is comparable to that of aerogel. The compressive strength is as high as 9.8 MPa. Given the chemical and high-temperature stability of SiC, the fabricated SiC foam is a promising candidate for modern aircraft and automobile applications.

  5. A Bluetooth Low-Energy Transceiver with 3.7-mW All-Digital Transmitter, 2.75-mW High-IF Discrete-Time Receiver, and TX/RX Switchable On-Chip Matching Network

    NARCIS (Netherlands)

    Kuo, F.W.; Binsfeld Ferreira, S.; Chen, Huan-Neng Ron; Cho, L.C.; Jou, C.P.; Hsueh, F.L.; Madadi, I.; Tohidian, M.; Shahmohammadi, M.; Babaie, M.; Staszewski, R.B.

    2017-01-01

    We present an ultra-low-power Bluetooth low-energy (BLE) transceiver (TRX) for the Internet of Things (IoT) optimized for digital 28-nm CMOS. A transmitter (TX) employs an all-digital phase-locked loop (ADPLL) with a switched current-source digitally controlled oscillator (DCO) featuring low

  6. Deposition of thin ultrafiltration membranes on commercial SiC microfiltration tubes

    DEFF Research Database (Denmark)

    Facciotti, Marco; Boffa, Vittorio; Magnacca, Giuliana

    2014-01-01

    . After 5 times coating, a 5.6 µm thick γ-Al2O3 layer was obtained. This membrane shows retention of ~75% for polyethylene glycol molecules with Mn of 8 and 35 kDa, indicating that, despite their intrinsic surface roughness, commercial SiC microfiltration tubes can be applied as carrier for thin......Porous SiC based materials present high mechanical, chemical and thermal robustness, and thus have been largely applied to water-filtration technologies. In this study, commercial SiC microfiltration tubes with nominal pore size of 0.04 m were used as carrier for depositing thin aluminium oxide...... (Al2O3) ultrafiltration membranes. These ultrafiltration membranes were obtained by coating, drying and calcination of a colloidal suspension of boehmite particles. After calcination, the membrane material consisted of nano-sized Υ-Al2O3 crystallites and had a narrow pore size distribution...

  7. Ab initio potential energy surface and vibration-rotation energy levels of silicon dicarbide, SiC2.

    Science.gov (United States)

    Koput, Jacek

    2016-10-05

    The accurate ground-state potential energy surface of silicon dicarbide, SiC2 , has been determined from ab initio calculations using the coupled-cluster approach. Results obtained with the conventional and explicitly correlated coupled-cluster methods were compared. The core-electron correlation, higher-order valence-electron correlation, and scalar relativistic effects were taken into account. The potential energy barrier to the linear SiCC configuration was predicted to be 1782 cm(-1) . The vibration-rotation energy levels of the SiC2 , (29) SiC2 , (30) SiC2 , and SiC(13) C isotopologues were calculated using a variational method. The experimental vibration-rotation energy levels of the main isotopologue were reproduced to high accuracy. In particular, the experimental energy levels of the highly anharmonic vibrational ν3 mode of SiC2 were reproduced to within 6.7 cm(-1) , up to as high as the v3  = 16 state. © 2016 Wiley Periodicals, Inc.

  8. Quasi-Freestanding multilayer graphene films on the carbon face of SiC

    Energy Technology Data Exchange (ETDEWEB)

    Siegel, D. A.; Hwang, C. G.; Fedorov, A. V.; Lanzara, A.

    2010-06-30

    The electronic band structure of as-grown and doped graphene grown on the carbon face of SiC is studied by high-resolution angle-resolved photoemission spectroscopy, where we observe both rotations between adjacent layers and AB-stacking. The band structure of quasi-freestanding AB-bilayers is directly compared with bilayer graphene grown on the Si-face of SiC to study the impact of the substrate on the electronic properties of epitaxial graphene. Our results show that the C-face films are nearly freestanding from an electronic point of view, due to the rotations between graphene layers.

  9. Brazing of SiC using Cu-Si non reactive alloys

    Energy Technology Data Exchange (ETDEWEB)

    Gasse, A.; Chaumat, G. [CEA Centre d`Etudes de Grenoble, 38 (France). Dept. d`Etudes des Materiaux; Rado, C.; Eustathopoulos, N. [Institut National Polytechnique, 38 - Grenoble (France)

    1995-12-31

    Wetting and adherence of filler metals on ceramics used to be achieved with active elements such as titanium. However, sessile drop experiments had already showed that a Cu 24 at % Si alloy has excellent wetting and adherence properties on SiC substrates under high vacuum without any measurable reactivity. Despite this good wetting, incomplete filling of joints was sometimes observed with such alloys in certain brazing experiments. This discrepancy is explained by a detailed analysis of Cu-Si alloy wetting mechanisms on SiC and confirmed by brazing experiments in different geometries. (authors). 8 figs.

  10. Proportional Fair Power Allocation for Secondary Transmitters in the TV White Space

    Directory of Open Access Journals (Sweden)

    Konstantinos Koufos

    2013-01-01

    Full Text Available The key bottleneck for secondary spectrum usage is the aggregate interference to the primary system receivers due to simultaneous secondary transmissions. Existing power allocation algorithms for multiple secondary transmitters in the TV white space either fail to protect the TV service in all cases or they allocate extremely low power levels to some of the transmitters. In this paper, we propose a power allocation algorithm that favors equally the secondary transmitters and it is able to protect the TV service in all cases. When the number of secondary transmitters is high, the computational complexity of the proposed algorithm becomes high too. We show how the algorithm could be modified to reduce its computational complexity at the cost of negligible performance loss. The modified algorithm could permit a spectrum allocation database to allocate near optimal transmit power levels to tens of thousands of secondary transmitters in real time. In addition, we describe how the modified algorithm could be applied to allow decentralized power allocation for mobile secondary transmitters. In that case, the proposed algorithm outperforms the existing algorithms because it allows reducing the communication signalling overhead between mobile secondary transmitters and the spectrum allocation database.

  11. Design, preparation and microwave absorbing properties of resin matrix composites reinforced by SiC fibers with different electrical properties

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Haitao, E-mail: xzddlht@163.com [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Science and Technology on Scramjet Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China); Cheng, Haifeng; Tian, Hao [Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha 410073 (China)

    2014-01-15

    Highlights: • SSMASs have better microwave absorbing properties in smaller thickness. • SSMASs can be realized by SiC fibers with different electrical resistivity. • Resistivity of SiC fibers can be regulated by adjusting surface characteristics. • The bandwidth of SSMASs at reflectivity below −10 dB can reach 11.6 GHz. -- Abstract: One kind of sandwich structure microwave absorbing structures (SSMASs) derived from Salisbury absorbers is reported. The impedance characteristics of SSMASs are analyzed, and the mechanisms of broadening microwave absorbing bandwidth are interpreted by Smith chart. In order to realize SSMASs, high electrical resistivity SiC fibers with Si–C–O surface layers and low electrical resistivity SiC fibers with pyrocarbon surface layers are employed and analyzed by SEM, XPS, AES and HRTEM. The conductive model of SiC fibers with pyrocarbon layers is built and electrical resistivity simulation is done. The SSMASs are fabricated by employing plain woven SiC fiber fabrics with high and low electrical resistivity as reinforcements of dielectric layers and lossy layer, respectively. The microwave absorbing properties of SSMASs are measured and compared with simulated results. The results show that the experimental and simulated results are in good agreement, the SSMASs have better wideband microwave absorbing properties, and the microwave absorbing bandwidth at reflectivity below −10 dB can reach 11.6 GHz.

  12. Vacancies in SiC nanopowders

    Energy Technology Data Exchange (ETDEWEB)

    Kityk, I.V.; Makowska-Janusik, M. [Technical Univ. of Czestochowa (Poland). Inst. of Phys.; Kassiba, A.; Charpentier, C. [Laboratoire de Physique de l' Etat Condense, UPRES-A6087, Universite du Maine, Avenue Olivier Messiaen, 72085 Cedex 9, LeMans (France); Tuesu, K. [Research Informatic Science Department, Tohoku University, 2-1-4 Katahira, Aoba-ku, 982-12, Sendai (Japan); Ling, Y. [Michigan Molecular Institute, 48640, Midland, MI (United States)

    2000-08-31

    Origin of vacancies in the large-sized SiC nanocrystals (higher than 10 nm) has been investigated using theoretical band structure calculations and experimental electronic paramagnetic resonance (EPR) measurements. Influence of geometry sizes on appearance of concrete vacancy has been studied. The theoretical approach includes self-consistent norm-conserving pseudopotential band energy calculations and geometry structure optimisation. The performed calculations show that the presence of the vacancies is a necessary attribute of the SiC nanocrystallites. Moreover, the type and concentration of the vacancies are dependent on the nanoparticle geometry. We have revealed that spin-polarised states of intracrystallite vacancies differ essentially from vacancies in the bulk crystals. A comparison between the performed theoretical simulations and obtained EPR experimental data shows the possibility of using the proposed methods for prediction of vacancy appearance in the binary nanocrystallites and possibility for their operation. (orig.)

  13. Role of Defects in Swelling and Creep of Irradiated SiC

    Energy Technology Data Exchange (ETDEWEB)

    Szlufarska, Izabela [Univ. of Wisconsin, Madison, WI (United States); Voyles, Paul [Univ. of Wisconsin, Madison, WI (United States); Sridharan, Kumar [Univ. of Wisconsin, Madison, WI (United States); Katoh, Yutai [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2016-01-16

    Silicon carbide is a promising cladding material because of its high strength and relatively good corrosion resistance. However, SiC is brittle and therefore SiC-based components need to be carefully designed to avoid cracking and failure by fracture. In design of SiC-based composites for nuclear reactor applications it is essential to take into account how mechanical properties are affected by radiation and temperature, or in other words, what strains and stresses develop in this material due to environmental conditions. While thermal strains in SiC can be predicted using classical theories, radiation-induced strains are much less understood. In particular, it is critical to correctly account for radiation swelling and radiation creep, which contribute significantly to dimensional instability of SiC under radiation. Swelling typically increases logarithmically with radiation dose and saturates at relatively low doses (damage levels of a few dpa). Consequently, swelling-induced stresses are likely to develop within a few months of operation of a reactor. Radiation-induced volume swelling in SiC can be as high as 2%, which is significantly higher than the cracking strain of 0.1% in SiC. Swelling-induced strains will lead to enormous stresses and fracture, unless these stresses can be relaxed via some other mechanism. An effective way to achieve stress relaxation is via radiation creep. Although it has been hypothesized that both radiation swelling and radiation creep are driven by formation of defect clusters, existing models for swelling and creep in SiC are limited by the lack of understanding of specific defects that form due to radiation in the range of temperatures relevant to fuel cladding in light water reactors (LWRs) (<1000°C). For example, defects that can be detected with traditional transmission electron microscopy (TEM) techniques account only for 10-45% of the swelling measured in irradiated SiC. Here, we have undertaken an integrated experimental and

  14. LOT-G3: Plasma Lamp, Ozonator and CW transmitter

    CERN Document Server

    Gobato, Ricardo; Gobato, Alekssander

    2015-01-01

    The LOT-G3 is designed to be a versatile equipment that perform several simple experiments for use in helping the physics classes for high school. Easy construction, low cost, using easily accessible materials. Its construction involves simple practices and knowledge of electromagnetism. It has the function of a plasma globe to demonstrate the ionization of a low pressure gas, as well as the formation of magnetic field. Can be used as sanitizer closed environments such as automotive vehicles in ozonator function, demonstrating the ionization of oxygen in the atmosphere, producing ozone, essential to life on earth. And as a sparks transmitter, low power, low frequency modulated continuous wave in (CW), for signals in Morse code. Therefore the equipment here called LOT-G3, has three functions: a plasma lamp, ozonator and CW transmitter.

  15. Biomimetic synthesis of cellular SiC based ceramics from plant ...

    Indian Academy of Sciences (India)

    Unknown

    Abstract. A novel biomimetic approach in designing and fabricating engineering ceramic materials has gained much interest in recent times. Following this approach, synthesis has been made of dense Si–SiC duplex ceramic composites and highly porous SiC ceramics in the image of the morphological features inherent in ...

  16. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In this SBIR project, APEI, Inc. is proposing to develop a high efficiency, rad-hard 3.8 kW silicon carbide (SiC) power supply for the Power Processing Unit (PPU) of...

  17. Reactivity and wettability of SiC by Ni and Ni-Si alloys

    Energy Technology Data Exchange (ETDEWEB)

    Rado, C. [INPG, 38 - Saint Martin d`Heres (France). LTPCM; Kalogeropoulou, S. [INPG, 38 - Saint Martin d`Heres (France). LTPCM; Eustathopoulos, N. [INPG, 38 - Saint Martin d`Heres (France). LTPCM

    1996-08-01

    Wettability of SiC by Ni and Ni-Si alloys was studied at 1633K by the sessile drop technique under high vacuum or pure He. It is shown that reactivity in this system can be controlled and even nearly suppressed while obtaining good wetting and strong interface. (orig.)

  18. Fast Turn-off Mine Transient Electromagnetic Transmitter System

    Directory of Open Access Journals (Sweden)

    ZHENG Xiao-Liang

    2014-05-01

    Full Text Available For solving problems such as short turn-off time, high linear degree of falling edge, measurement of turn-off time and influence of primary signals for transient electromagnetic transmitter, and restrictions because of the environmental conditions of underground coal mine, this thesis aims at designing a new transient electromagnetic transmitter system suitable for coal mine. Supported by damping absorption circuit, such system applies small volume, sectional transmitting coil, with features of short turn-off time, high linear degree of current falling edge. It uses the transmitter monitoring circuit, which accurately measures turn-off time and simultaneously records the current value changes after turn-off, thus to eliminate the influence of primary field as well as to restore earlier secondary field signals for reference and finally to improve the ability to detect the shallow structure. It turns out that the new system has a shorter turn-off time, a higher linear degree of current falling and more accurate data record of turn-off current.

  19. Secure Broadcasting with Imperfect Channel State Information at the Transmitter

    KAUST Repository

    Hyadi, Amal

    2015-11-13

    We investigate the problem of secure broadcasting over fast fading channels with imperfect main channel state information (CSI) at the transmitter. In particular, we analyze the effect of the noisy estimation of the main CSI on the throughput of a broadcast channel where the transmission is intended for multiple legitimate receivers in the presence of an eavesdropper. Besides, we consider the realistic case where the transmitter is only aware of the statistics of the eavesdropper’s CSI and not of its channel’s realizations. First, we discuss the common message transmission case where the source broadcasts the same information to all the receivers, and we provide an upper and a lower bounds on the ergodic secrecy capacity. For this case, we show that the secrecy rate is limited by the legitimate receiver having, on average, the worst main channel link and we prove that a non-zero secrecy rate can still be achieved even when the CSI at the transmitter is noisy. Then, we look at the independent messages case where the transmitter broadcasts multiple messages to the receivers, and each intended user is interested in an independent message. For this case, we present an expression for the achievable secrecy sum-rate and an upper bound on the secrecy sum-capacity and we show that, in the limit of large number of legitimate receivers K, our achievable secrecy sum-rate follows the scaling law log((1−) log(K)), where is the estimation error variance of the main CSI. The special cases of high SNR, perfect and no-main CSI are also analyzed. Analytical derivations and numerical results are presented to illustrate the obtained expressions for the case of independent and identically distributed Rayleigh fading channels.

  20. 500?C SiC JFET Driver Circuits and Packaging Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In the proposed development, SiC JFET control circuitry and normally-off SiC JFET power switch will be integrated in a single SiC chip that will provide digital...

  1. Long-Term Reliability of a Hard-Switched Boost Power Processing Unit Utilizing SiC Power MOSFETs

    Science.gov (United States)

    Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Iannello, Christopher J.; Del Castillo, Linda Y.; Fitzpatrick, Fred D.; Mojarradi, Mohammad M.; hide

    2016-01-01

    Silicon carbide (SiC) power devices have demonstrated many performance advantages over their silicon (Si) counterparts. As the inherent material limitations of Si devices are being swiftly realized, wide-band-gap (WBG) materials such as SiC have become increasingly attractive for high power applications. In particular, SiC power metal oxide semiconductor field effect transistors' (MOSFETs) high breakdown field tolerance, superior thermal conductivity and low-resistivity drift regions make these devices an excellent candidate for power dense, low loss, high frequency switching applications in extreme environment conditions. In this paper, a novel power processing unit (PPU) architecture is proposed utilizing commercially available 4H-SiC power MOSFETs from CREE Inc. A multiphase straight boost converter topology is implemented to supply up to 10 kilowatts full-scale. High Temperature Gate Bias (HTGB) and High Temperature Reverse Bias (HTRB) characterization is performed to evaluate the long-term reliability of both the gate oxide and the body diode of the SiC components. Finally, susceptibility of the CREE SiC MOSFETs to damaging effects from heavy-ion radiation representative of the on-orbit galactic cosmic ray environment are explored. The results provide the baseline performance metrics of operation as well as demonstrate the feasibility of a hard-switched PPU in harsh environments.

  2. Use of a novel acoustic dissolved oxygen transmitter for fish telemetry

    DEFF Research Database (Denmark)

    Svendsen, Jon Christian; Aarestrup, Kim; Steffensen, J.F.

    2006-01-01

    The multiple responses of fishes to changes in dissolved oxygen saturations have been studied widely in the laboratory. In contrast only few studies have included field observations. The objective of the present study was to evaluate the performance of a novel acoustic dissolved oxygen transmitter...... for field biotelemetry. The results demonstrated that the output of the transmitter was unaffected by three different temperatures (10 to 30 degrees C) and described the dissolved oxygen saturation with high accuracy (r(2) > 0.99) over the entire range of 0 to 191% saturation. The response time (>= 90......% of end value) of the transmitter was 12 s both in terms of decreasing (100 to 0%) and increasing (0 to 100%) oxygen saturations. When externally attached to fishes the present findings support the use of the transmitter for reliable dissolved oxygen measurements on individuals living in environments...

  3. Transmittance and reflectance of crystalline quartz and highand low-water content fused silica from 2 microns to 1 mm

    Science.gov (United States)

    Heaney, J. B.; Stewart, K. P.; Hass, G.

    1983-01-01

    The transmittances and reflectances of cultured crystalline quartz, Suprasil, Suprasil W, and Infrasil were compared over the wavelength region from 2 to 1000 microns. The high-water content of Suprasil and the low-water content of cultured crystalline quartz, Suprasil W, and Infrasil were determined by their transmittances measured at 2.73 microns where water content causes high absorption in optical materials. The fact that the fused silicas, both with high- and low-water content, had identical far-IR transmittances and that their transmittances were greatly inferior to that of crystalline quartz led to the conclusion that their inferior transmittance is due to their amorphous structure and not to their water content.

  4. Electron Spectroscopy Study of SiC,

    Science.gov (United States)

    1983-09-01

    Liquid nitrogen cooling is supplied to the central copper block of the sample holder by flexible spiral stainless steel capillary. This cooling facility...sapphire disks from thinner copper blocks at both sides. The outer copper blocks hold 1.5 mm diameter W rods to which are welded a pair of 0.375 mm...sputtering was sufficient to implant F+ and Ar+ ions deep enough in the SiC surface layer, so that the implanted F and Ar could not be removed-by thermal

  5. Photon absorption and emission properties of 7 Å SiC nanoclusters: Electronic gap, surface state, and quantum size effect

    Energy Technology Data Exchange (ETDEWEB)

    Guo, Xiaoxiao; Chen, Xifang; Fan, Baolu; Zhang, Yumeng; Fan, Jiyang, E-mail: jyfan@seu.edu.cn [Department of Physics and Jiangsu Key Laboratory for Advanced Metallic Materials, Southeast University, Nanjing 211189 (China)

    2016-07-04

    People know little experimentally about the physical properties of the SiC nanoclusters with sizes of a couple of angstroms. Herein, we study the electronic structure and light absorption/emission properties of the SiC nanoclusters with an average diameter of 7 Å that are fabricated by diminishing the sizes of the SiC microcrystals under high pressure and high temperature. The results reveal that the SiC nanoclusters have an indirect energy gap of 5.1 eV. Unlike the case of larger SiC nanocrystals, the luminescence of the SiC nanoclusters is dominated by two types of oxygen-related surface defects, and the maximum of their photoluminescence/photoluminescence excitation spectrum lies at 4.1/3.3 and 3.8/3.0 eV, respectively. The energy gap of the SiC nanoparticles with reference to bulk value is found to be inversely proportional to the diameter to the power 0.97, which shows slower increase of energy gap with decreasing size than what is predicted by using the first-principles calculations.

  6. Nanocrystalline Grapheme Layer Induced on Surface of SiC Thin Film by Electron Beam Irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Hanbyul; Jeon, Youngeun; Jung, Sungchul; Kwak, Jinsung; Kim, Sung Youb; Kwon, Soonyong [Ulsan National Institute of Science and Technology, Ulsan (Korea, Republic of); Ko, Jaehyeon [Hallym Univ., Chuncheon (Korea, Republic of); Lee, Byung Cheol; Kang, Hyun Suk [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2013-07-01

    It is observed that a graphene layer forms on the surface of a thin film of SiC by irradiating electron beam (e-beam) directly on the sample surface in high vacuum ({approx}10{sup -6} Torr) environment. A SiC thin film was deposited on a sapphire substrate by RF magnetron sputtering at the substrate temperature of {approx}200 .deg. C. The e-beam irradiation on the sample surface was performed at an acceleration voltage of 8 kV. The graphene layer formation was revealed by the characteristic peaks (D, G, 2D) in the measured Raman spectra. Based on the relatively large D peak in the Raman spectra, the formed graphene layer is thought to be nanocrystalline. The quality of e-beam induced graphene layer was found to be improved noticeably by a Ni film over-coating on the SiC thin film before electron beam irradiation, which is confirmed by the significant changes of measured Raman spectra compared with the spectra without Ni over-coating. The Ni film is believed to enhance the carbon adatom motion, leading to the formation of graphene layer with larger grain size. Our experimental results propose a plausible method for directly writing graphene patterns on SiC thin film just by irradiating e-beam on the sample surface without using conventional pattering processes.

  7. Zirconia toughened SiC whisker reinforced alumina composites small business innovation research

    Science.gov (United States)

    Loutfy, R. O.; Stuffle, K. L.; Withers, J. C.; Lee, C. T.

    1987-01-01

    The objective of this phase 1 project was to develop a ceramic composite with superior fracture toughness and high strength, based on combining two toughness inducing materials: zirconia for transformation toughening and SiC whiskers for reinforcement, in a controlled microstructure alumina matrix. The controlled matrix microstructure is obtained by controlling the nucleation frequency of the alumina gel with seeds (submicron alpha-alumina). The results demonstrate the technical feasibility of producing superior binary composites (Al2O3-ZrO2) and tertiary composites (Al2O3-ZrO2-SiC). Thirty-two composites were prepared, consolidated, and fracture toughness tested. Statistical analysis of the results showed that: (1) the SiC type is the key statistically significant factor for increased toughness; (2) sol-gel processing with a-alumina seed had a statistically significant effect on increasing toughness of the binary and tertiary composites compared to the corresponding mixed powder processing; and (3) ZrO2 content within the range investigated had a minor effect. Binary composites with an average critical fracture toughness of 6.6MPam sup 1/2, were obtained. Tertiary composites with critical fracture toughness in the range of 9.3 to 10.1 MPam sup 1/2 were obtained. Results indicate that these composites are superior to zirconia toughened alumina and SiC whisker reinforced alumina ceramic composites produced by conventional techniques with similar composition from published data.

  8. Selected mechanical properties of aluminum composite materials reinforced with SiC particles

    Directory of Open Access Journals (Sweden)

    A. Kurzawa

    2008-07-01

    Full Text Available This work presents the results of research concerning influence of ceramic particles’ content of silicon carbide on selected mechanical properties of type AW-AlCu4Mg2Mn - SiC composite materials. Composites produced of SiC particles with pressure infiltration method of porous preform and subject to hot plastic forming in the form of open die forging were investigated. The experimental samples contained from 5% up to 45% of reinforcing SiC particles of 8÷10μm diameter. Studies of strength properties demonstrated that the best results, in case of tensile strength as well as offset yield strength, might be obtained while applying reinforcement in the amount of 20-25% vol. of SiC. Application of higher than 25% vol. contents of reinforcing particles leads to gradual strength loss. The investigated composites were characterized by very high functional properties, such as hardness and abrasive wear resistance, whose values increase strongly with the increase of reinforcement amount. The presented results of the experiments shall allow for a more precise component selection of composite materials at the stage of planning and design of their properties.

  9. Mortality, Transmitter Retention, Growth, and Wound Healing in Juvenile Salmon Injected with Micro Acoustic Transmitters

    Energy Technology Data Exchange (ETDEWEB)

    Liss, Stephanie A.; Brown, Richard S.; Deters, Katherine A.; Walker, Ricardo W.; Deng, Z. Daniel; Eppard, M. Brad; Townsend, Richard L.; Seaburg, Adam G.

    2016-07-28

    A cylindrical acoustic transmitter (AT; 0.2 g) has been developed for injection into the peritoneum of fish. Laboratory studies can provide tagging guidelines to minimize the effect of implantation techniques and transmitter burden (relative weight of the transmitter to the weight of the fish) in fish before a transmitter is used in field studies. The goal of this study was to examine response variables (mortality, transmitter expulsion, growth, wound area) of juvenile Chinook Salmon (Oncorhynchus tschawytscha; 65–104 mm fork length [FL]) injected with an AT along a wide range of sizes that could lead to a guideline for minimizing tagging effects. The overarching goal was to determine a minimum size threshold for fish that can be injected, while minimizing adverse transmitter effects. Juveniles (n = 700) were separated into four treatments: (1) acoustic transmitter injection (AT), (2) AT and a passive integrated transponder tag injection (AT+PIT), (3) visual implant elastomer injection (Marked control), and (4) unmarked (Unmarked control). Fish were evaluated weekly for four weeks, and again at the end of the study (60 d post-tagging). Fish injected with an AT or an AT+PIT experienced greater mortality than Marked controls. By 60 d post-tagging, transmitter expulsion was 44% for AT fish and 20% for AT+PIT fish. Fish injected with an AT or an AT+PIT grew (FL and weight gain) significantly less than Marked controls, and no minimum size thresholds were detected. Finally, initial size (FL) significantly affected wound area in AT and AT+PIT fish. A size threshold was only identified on Day 7 (85.1 mm) for AT+PIT fish, indicating that wound areas in fish < 85.1 mm were larger than wound areas of fish > 85.1 mm. This research suggests that injecting juveniles with an AT or an AT+PIT had a greater effect on smaller fish than larger fish.

  10. The effect of different surface treatments on light transmittance of nano-hybrid and polymer-infiltrated ceramics

    Directory of Open Access Journals (Sweden)

    Işıl Çekiç Nagaş

    2017-09-01

    Full Text Available Objective: The aim of this study was to evaluate the effect of different surface treatments on the light transmittance of three different esthetic computer-aided design/computer-aided manufacturing (CAD/CAM materials (Vita Enamic, Cerasmart, Lava Ultimate. Materials and Method: Thirty-five specimens from each of nano-hybrid and polymer-infiltrated ceramic network-structured CAD/CAM blocks (Vita Enamic, Lava Ultimate, Cerasmart were prepared (n=105. Then the specimens were divided into 5 sub-groups according to the applied surface treatment (n=7/group. Group 1: Sandpaper (#1000 and #4000 grit SiC paper as control, Group 2: Aluminium oxide finishing and polishing disc (Sof-Lex Disk, Group 3: Diamond filled polishing paste (Diapolisher Paste, Group 4: Diamond polishing disc (Diacomp Plus Twist and Group 5: Silicone rubber polisher (Polydentia. Following finishing and polishing procedures of the specimens, the light transmittance of the specimens under plasma arc light-curing unit was measured by using a hand-held radiometer. Statistical significance was determined using two-way ANOVA and Tukey post-hoc tests (α=0.05. Results: Regarding the main effects, significant difference was observed between the light transmittance values of the CAD/CAM hybrid ceramic materials (p<0.05: Cerasmart (83.3%±3.7, Vita Enamic (80.5%±5.3, and Lava Ultimate (76.5%±4.9. Different surface finishing and polishing procedures had no significant effect on the light transmittance values (p=0.608. However, the material and procedure interaction revealed a significant effect on the light transmittance values (p<0.05. Conclusion: Application of surface finishing and polishing procedures might affect the light transmission property of nano-hybrid and polymer infiltrated ceramic network structured CAD/CAM blocks.

  11. Mechanical performance of SiC based MEMS capacitive microphone for ultrasonic detection in harsh environment

    Science.gov (United States)

    Zawawi, S. A.; Hamzah, A. A.; Mohd-Yasin, F.; Majlis, B. Y.

    2017-08-01

    In this project, SiC based MEMS capacitive microphone was developed for detecting leaked gas in extremely harsh environment such as coal mines and petroleum processing plants via ultrasonic detection. The MEMS capacitive microphone consists of two parallel plates; top plate (movable diaphragm) and bottom (fixed) plate, which separated by an air gap. While, the vent holes were fabricated on the back plate to release trapped air and reduce damping. In order to withstand high temperature and pressure, a 1.0 μm thick SiC diaphragm was utilized as the top membrane. The developed SiC could withstand a temperature up to 1400°C. Moreover, the 3 μm air gap is invented between the top membrane and the bottom plate via wafer bonding. COMSOL Multiphysics simulation software was used for design optimization. Various diaphragms with sizes of 600 μm2, 700 μm2, 800 μm2, 900 μm2 and 1000 μm2 are loaded with external pressure. From this analysis, it was observed that SiC microphone with diaphragm width of 1000 μm2 produced optimal surface vibrations, with first-mode resonant frequency of approximately 36 kHz. The maximum deflection value at resonant frequency is less than the air gap thickness of 8 mu;m, thus eliminating the possibility of shortage between plates during operation. As summary, the designed SiC capacitive microphone has high potential and it is suitable to be applied in ultrasonic gas leaking detection in harsh environment.

  12. Creep of SiC Hot-Pressed with Al, B, and C

    Energy Technology Data Exchange (ETDEWEB)

    Sixta, Mark Eldon [Univ. of California, Berkeley, CA (United States)

    2000-03-31

    The creep of a high strength, high toughness SiC, sintered with Al, B, and C was investigated. For elevated temperature applications, the time-dependent deformation, creep response, must be fully characterized for candidate materials. The mechanisms responsible for high temperature deformation in ABC-SiC were evaluated. The creep response was compared to materials that have glassy grain boundary phases but do not have interlocked grains. The creep mechanisms were assessed.

  13. Synthesis of biomorphic SiC ceramic from bamboo charcoal.

    Science.gov (United States)

    Zhu, Jiangtao; Kwong, Fung Luen; Ng, Dickon Hang Leung

    2009-02-01

    Biomorphic SiC ceramic was successfully synthesized by reaction sintering between bamboo charcoal and a Si/SiO2 powder mixture. The charcoal was converted into an entirely SiC ceramic inherited with the original bamboo structure. Samples were characterized according to their crystallinity, morphology, microstructures and pore structures. We found that various morphological SiC structures were formed in different parts of the charcoal which depended on the morphology of the textures. The length of SiC nanowires were up to micron size. They were grown in the direction. The number of micropores in the converted biomorphic SiC was less than the original bamboo charcoal, but the pore diameter was larger.

  14. Layer morphology and Al implant profiles after annealing of supersaturated, single-crystalline, amorphous, and nanocrystalline SiC

    Science.gov (United States)

    Heera, V.; Mücklich, A.; Dubois, C.; Voelskow, M.; Skorupa, W.

    2004-09-01

    Al supersaturated SiC layers (5×1020Alcm-3) were produced by multienergy, high-dose ion implantation into 6H- and 4H-SiC. Several implantation schemes with varying implantation sequence and temperature were investigated. In dependence on the implantation conditions damaged single-crystalline, amorphous, or nanocrystalline layers were formed. The layer morphology and Al distribution in the as-implanted state as well as structural changes and related Al redistribution after high-temperature annealing (1500-1700°C) were characterized by cross-sectional transmission electron microscopy, Rutherford backscattering spectrometry in combination with ion channeling, atomic force microscopy, and secondary-ion mass spectrometry. Remarkable Al redistribution effects have been found after annealing of Al supersaturated SiC. During high-temperature annealing Al atoms in excess to the solid solubility (2×1020Alcm-3) tend to precipitate in single-crystalline SiC whereas they diffuse out in amorphous or nanocrystalline SiC. Redistribution of Al with concentration below the solid solubility is governed by transient enhanced diffusion which can be controlled by the annealing scheme. Amorphization of SiC is advantageous in the case of Al doping to levels higher than the solid solubility because it prevents Al precipitation during annealing and helps to form boxlike Al profiles with smooth plateau and abrupt edge.

  15. Structural characterization of SiC nanoparticles

    Science.gov (United States)

    Sun, Baoxing; Xie, Ruobing; Yu, Cun; Li, Cheng; Xu, Hongjie

    2017-10-01

    The structure and size of SiC nanoparticles were studied by different characterization methods including small angle X-ray scattering (SAXS), transmission electron microscope (TEM), and X-ray diffraction (XRD). The results showed that particle size distributions determined respectively from SAXS and TEM are comparable and follow the log-normal function. The size distribution of the particles is between 10 to 100 nm with most of them being in the range of 20–50 nm. The average particle size is around 42 nm. XRD identifies the phase of the SiC nanoparticles and suggests the average size of the single crystalline domain to be around 21 nm. The combined results from XRD and SAXS suggest the existence of many polycrystals, which is confirmed by the HRTEM observation of particles with twins and stacking faults. The material synthesis methods leading to various particle sizes are also discussed. Project supported by the National Natural Science Foundation of China (No. 11505273) and the Strategic Priority Research Program of the Chinese Academy of Sciences (No. XDA02000000).

  16. Epitaxial sic devices for radiation dosimetry

    Energy Technology Data Exchange (ETDEWEB)

    Bruzzi, M; Menichelli, D.; Pini, S.; Sciortino, S. [INFN, Firenze (Italy); Firenze Univ., Firenze (Italy). Dipartimento di Energetica; Bucciolini, M. [INFN, Firenze (Italy); Firenze Univ., Firenze (Italy). Dipartimento di Fisiopatologia Clinica; Nava, F. [Modena Univ., Modena (Italy). Dipartimento di Fisica; INFN, Bologna (Italy)

    2002-07-01

    The current response of SiC on-line dosimeters to {gamma}-radiation from{sup 60}Co and {sup 167}Cs {gamma}-sources, X-photons and 22MeV electrons from linear accelerator has been investigated. The devices used are 4H-SiC epitaxial n-type layer deposited onto a 4H-SiC n{sup +} type substrate wafer doped with nitrogen. Single-pad Schottky contacts have been produced by deposition of a 1000A gold film on the epitaxial layer and ohmic contacts have been deposited on the rear substrate side. The detector has been then embedded in epoxy resin and studied in the dose and dose-rate ranges 0.1-1 Gy 0.1-10Gy/min. A signal response comparable to that of silicon standard dosimeters has been measured with the unbiased SiC device. The released charge and induced current have been observed to increase linearly respectively with the dose and dose-rate. A preliminary study on the changes in the sensibility of the device after a {gamma}-rays accumulated dose up to 10kGy is also presented.

  17. Conception d’un onduleur triphasé à base de composants SiC en technologie JFET à haute fréquence de commutation

    OpenAIRE

    Fonteneau, Xavier

    2014-01-01

    Since 2000, Silicon Carbide (SiC) components are available on the market mainly as Schottky diodes and FET transistor. These new devices provide better switching performance than Silicon (Si) components that leads to a reduction of losses and operating temperatures at equivalent cooling system. Using SiC components allows to a better converter integration. It is in this context that ECA-EN has started this thesis dedicated to using SiC devices in a three-phase inverter at high switching frequ...

  18. Short-circuit ruggedness assessment of a 1.2 kV/180 A SiC MOSFET power module

    DEFF Research Database (Denmark)

    Ionita, Claudiu; Nawaz, Muhammad; Ilves, Kalle

    2017-01-01

    While investigations on short-circuit ruggedness of discrete SiC MOSFET are widely encountered in the scientific literature, there is not so much research dealing with the operational robustness of high power SiC MOSFET modules. In this paper, the short-circuit (SC) ruggedness under hard switching...... fault (HSF) of a commercial 1.2 kV/180 A SiC MOSFET power module in half-bridge configuration will be presented. The test conditions, such as DC-link voltage (VDC), gate resistance (Rg) and gate-source supply voltage (VGS) are varied systematically to investigate the effect of these parameters...

  19. Polycrystalline SiC fibers from organosilicon polymers

    Science.gov (United States)

    Lipowitz, Jonathan; Rabe, James A.; Zank, Gregg A.

    1991-01-01

    Various organosilicon polymers have been converted into small diameter, fine-grained silicon carbide fibers by melt spinning, crosslinking, and pyrolyzing to greater than 1600 C. The high pyrolysis temperature densifies the fiber and causes CO evolution which removes nearly all oxygen. An additive prevents the loss of strength normally associated with such treatments. Silicon carbide fibres with up to 2.6 GPa (380 ksi) tensile strength, greater than 420 GPa (greater than 60 Msi) elastic modulus, and 3.1-3.2 mg/cu m density have been prepared via this process. Their microstructure consists of greater than 95 wt pct B-SiC crystallites averaging 30-40 nm diameter, with varying amounts of graphitic carbon between the SiC grains. Under inert conditions, the fibers can be thermally aged at least 12 h/1800 C with minimal change in properties.

  20. High temperature alkali corrosion of dense SiC and Si{sub 3}N{sub 4} coated with CMZP and Mg-doped Al{sub 2}TiO{sub 5} in coal gas. Quarterly report, July 1, 1995--September 30, 1995

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Shaokai; Brown, J.J.

    1995-10-02

    SiC samples coated with CMZP and Mg-Al{sub 2}TiO{sub 5}, respectively, were tested in a 100-hour slagging combustion test at the Energy and Environmental Research Center at the University of North Dakota. Results of measurements and analysis indicate that CMZP and Mg-Al{sub 2}TiO{sub 5} coatings improved the high temperature alkali corrosion resistance under coal combustion atmospheres. It is clearly shown that it is important to obtain a homogeneous and crack-free coating and good adhesion of the coating to the surface of the substrate for the best corrosion resistance. Some measures to improve the coating procedure are presented.

  1. A 4 Gbps current-mode transmitter for 12-bit 250 MSPS ADC

    Science.gov (United States)

    Chen, Zhenhai; Yu, Zongguang; Wei, Jinghe; Zhou, Dejin; Su, Xiaobo; Zou, Jiaxuan

    2017-08-01

    A 4 Gbps transmitter for a 12-bit 250 MSPS pipelined ADCs is presented. A low power current mode (CM) output driver with reverse scaling technique is proposed. A high speed, low power combined serializer is implemented to convert 12 bit parallel data into a seria1 data stream. The whole transmitter is used in a 12-bit 250 MSPS pipelined ADC for the digital output buffer and fabricated in 180 nm 1. 8 V 1P5M CMOS technology. Test results show that the transmitter provides an eye height greater than 800 mV for data rates of both 2 Gbps and 4 Gbps, the 12-bit 250 MSPS ADC achieves the SNR of 69.92 dBFS and SFDR of 81.17 dB with 20.1 MHz input at full sampling speed. The ADC with the 4 Gbps transmitter consumes the power consumption of 395 mW, where the power consumption of transmitter is 75 mW. The ADC occupies an area of 2.5× 3.2 {{mm}}2, where the active area of the transmitter block is 0.5× 1.2 {{mm}}2. Project supported by the National Science Foundation of China (No. 61474092) and Key Project of Natural Science of Anhui Provincial Department of Education (No. KJ2017A396).

  2. Amorphous Ni–Zr layer applied for microstructure improvement of Ni-based ohmic contacts to SiC

    Energy Technology Data Exchange (ETDEWEB)

    Wzorek, M., E-mail: mwzorek@ite.waw.pl; Czerwinski, A.; Borysiewicz, M.A.; Gołaszewska, K.; Myśliwiec, M.; Ratajczak, J.; Piotrowska, A.; Kątcki, J.

    2015-09-15

    Highlights: • Thin Ni–Si layers on SiC were studied after annealing. • Different types of microstructural defects occur depending on Ni:Si ratio. • Mechanisms leading to morphology degradation are discussed. • Presented method improves the microstructure of ohmic contacts to SiC. - Abstract: The new approach to fabrication process of nickel-based ohmic contacts to silicon carbide (SiC) is presented. During the first annealing step (300 °C), the amorphous Ni–Zr layer retards diffusion between two nickel silicide layers, thus handling the contradictory requirements for optimal Ni:Si ratio. Different stoichiometry obtained in each silicide layer allows to preserve smooth interface with SiC and simultaneously to avoid relatively easily meltable Si-rich Ni–Si phases during high temperature annealing (1000 °C) and therefore prevents morphology degradation. After annealing at 1000 °C only one final nickel silicide layer is present and Zr atoms are agglomerated at its surface. Morphology of the final silicide layer is substantially improved when compared to typical Ni-based contacts obtained by similar high-temperature annealings. The improved microstructure of the ohmic contact is a promising advantage in terms of SiC devices reliability.

  3. Agricultural applications of NIR reflectance and transmittance

    DEFF Research Database (Denmark)

    Gislum, René

    2009-01-01

    There has been a considerable increase in the use of near infrared (NIR) reflectance and transmittance spectroscopy technologies for rapid determination of quality parameters in agriculture, including applications within crop product quality, feed and food quality, manure quality, soil analyses etc....... As a result it was decided to arrange a seminar within the Nordic Association of Agricultural Scientists. This is a report of the meeting....

  4. The Effect of Fiber Architecture on Matrix Cracking in Sic/sic Cmc's

    Science.gov (United States)

    Morscher, Gregory N.

    2005-01-01

    Applications incorporating silicon carbide fiber reinforced silicon carbide matrix composites (CMC's) will require a wide range of fiber architectures in order to fabricate complex shape. The stress-strain response of a given SiC/SiC system for different architectures and orientations will be required in order to design and effectively life-model future components. The mechanism for non-linear stress-strain behavior in CMC's is the formation and propagation of bridged-matrix cracks throughout the composite. A considerable amount of understanding has been achieved for the stress-dependent matrix cracking behavior of SiC fiber reinforced SiC matrix systems containing melt-infiltrated Si. This presentation will outline the effect of 2D and 3D architectures and orientation on stress-dependent matrix-cracking and how this information can be used to model material behavior and serve as the starting point foe mechanistic-based life-models.

  5. System for the growth of bulk SiC crystals by modified CVD techniques. Final report, December 1993-December 1994

    Energy Technology Data Exchange (ETDEWEB)

    Steckl, A.J.

    1994-12-01

    The goal of this program was the development of a SiC CVD growth of films thick enough to be useful as pseudo-substrates. The cold-walled CVD system was designed, assembled, and tested. Extrapolating from preliminary evaluation of SiC films grown in the system at relatively low temperatures indicates that the growth rate at the final temperatures will be high enough to make this approach practical. Modifications of the system to allow high temperature growth and cleaner growth conditions are in progress. This program was jointly funded by Wright Laboratory, Materials Directorate and NASA LeRC and monitored by NASA.

  6. Photoluminescence enhancement in porous SiC passivated by atomic layer deposited Al2O3 films

    DEFF Research Database (Denmark)

    Lu, Weifang; Iwasa, Yoshimi; Ou, Yiyu

    2016-01-01

    Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved.......Porous SiC co-doped with B and N was passivated by atomic layer deposited (ALD) Al2O3 films to enhance the photoluminescence. After optimizing the deposition conditions, as high as 14.9 times photoluminescence enhancement has been achieved....

  7. Irradiation damage of SiC semiconductor device (I)

    Energy Technology Data Exchange (ETDEWEB)

    Park, Ji Yeon; Kim, Weon Ju

    2000-09-01

    This report reviewed the irradiation damage of SiC semiconductor devices and examined a irradiation behavior of SiC single crystal as a pre-examination for evaluation of irradiation behavior of SiC semiconductor devices. The SiC single was crystal irradiated by gamma-beam, N+ ion and electron beam. Annealing examinations of the irradiated specimens also were performed at 500 deg C. N-type 6H-SiC dopped with N+ ion was used and irradiation doses of gamma-beam, N+ion and electron beam were up to 200 Mrad, 1x10{sup 16} N{sup +} ions/cm{sup 2} and 3.6 x 10{sup 17} e/cm{sup 2} and 1.08 x 10{sup 18} e/cm{sup 2} , respectively. Irradiation damages were analyzed by the EPR method. Additionally, properties of SiC, information about commercial SiC single crystals and the list of web sites with related to the SiC device were described in the appendix.

  8. Compatibility of SiC and SiC Composites with Molten Lead

    Energy Technology Data Exchange (ETDEWEB)

    H Tunison

    2006-03-07

    The choice of structural material candidates to contain Lead at 1000 C are limited in number. Silicon carbide composites comprise one choice of possible containment materials. Short term screening studies (120 hours) were undertaken to study the behavior of Silicon Carbide, Silicon Nitride, elemental Silicon and various Silicon Carbide fiber composites focusing mainly on melt infiltrated composites. Isothermal experiments at 1000 C utilized graphite fixtures to contain the Lead and material specimens under a low oxygen partial pressure environment. The corrosion weight loss values (grams/cm{sup 2} Hr) obtained for each of the pure materials showed SiC (monolithic CVD or Hexoloy) to have the best materials compatibility with Lead at this temperature. Increased weight loss values were observed for pure Silicon Nitride and elemental Silicon. For the SiC fiber composite samples those prepared using a SiC matrix material performed better than Si{sub 3}N{sub 4} as a matrix material. Composites prepared using a silicon melt infiltration process showed larger corrosion weight loss values due to the solubility of silicon in lead at these temperatures. When excess silicon was removed from these composite samples the corrosion performance for these material improved. These screening studies were used to guide future long term exposure (both isothermal and non-isothermal) experiments and Silicon Carbide composite fabrication work.

  9. High SBS-Threshold Er/Yb Co-Doped Phosphate Glass Fiber Amplifiers for High Power, Sub-us Pulsed, Narrow Linewidth, All Fiber-Based Laser Transmitter Project

    Data.gov (United States)

    National Aeronautics and Space Administration — In Phase I, NP Photonics has achieved 1.2 kW peak power for 105 ns fiber laser pulses, and successfully demonstrated the feasibility to produce monolithic high SBS...

  10. Effects of SiC nanoparticles orally administered in a rat model: Biodistribution, toxicity and elemental composition changes in feces and organs

    Energy Technology Data Exchange (ETDEWEB)

    Lozano, Omar, E-mail: omar.lozanogarcia@fundp.ac.be [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Research Centre for the Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Laloy, Julie; Alpan, Lütfiye [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Department of Pharmacy, NAMEDIC, Namur Thrombosis and Hemostasis Center (NTHC), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Mejia, Jorge [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Research Centre for the Physics of Matter and Radiation (PMR-LARN), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Rolin, Stéphanie [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Department of Pharmacy, NAMEDIC, Namur Thrombosis and Hemostasis Center (NTHC), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Toussaint, Olivier [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Laboratory of Biochemistry and Cellular Biology (URBC), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); Dogné, Jean-Michel [Namur Nanosafety Center (NNC), NAmur Research Institute for LIfe Sciences (NARILIS), University of Namur - FUNDP, Rue de Bruxelles 61, B-5000 Namur (Belgium); Department of Pharmacy, NAMEDIC, Namur Thrombosis and Hemostasis Center (NTHC), University of Namur (FUNDP), Rue de Bruxelles 61, B-5000 Namur (Belgium); and others

    2012-10-15

    Background: Silicon carbide (SiC) presents noteworthy properties as a material such as high hardness, thermal stability, and photoluminescent properties as a nanocrystal. However, there are very few studies in regard to the toxicological potential of SiC NPs. Objectives: To study the toxicity and biodistribution of silicon carbide (SiC) nanoparticles in an in vivo rat model after acute (24 h) and subacute (28 days) oral administrations. The acute doses were 0.5, 5, 50, 300 and 600 mg·kg{sup −1}, while the subacute doses were 0.5 and 50 mg·kg{sup −1}. Results: SiC biodistribution and elemental composition of feces and organs (liver, kidneys, and spleen) have been studied by Particle-Induced X-ray Emission (PIXE). SiC and other elements in feces excretion increased by the end of the subacute assessment. SiC did not accumulate in organs but some elemental composition modifications were observed after the acute assessment. Histopathological sections from organs (stomach, intestines, liver, and kidneys) indicate the absence of damage at all applied doses, in both assessments. A decrease in the concentration of urea in blood was found in the 50 mg·kg{sup −1} group from the subacute assessment. No alterations in the urine parameters (sodium, potassium, osmolarity) were found. Conclusion: This is the first study that assesses the toxicity, biodistribution, and composition changes in feces and organs of SiC nanoparticles in an in vivo rat model. SiC was excreted mostly in feces and low traces were retrieved in urine, indicating that SiC can cross the intestinal barrier. No sign of toxicity was however found after oral administration. -- Highlights: ► SiC nanoparticles were orally administered to rats in acute and subacute doses. ► SiC was found in low traces in urine. It is mostly excreted in feces within 5 days. ► SiC excretion rate, feces and organ elemental composition change with time. ► No morphological alteration were found on GI tract, liver, kidneys

  11. Modified Polar Sigma-Delta Transmitter for Multiradio Applications

    Directory of Open Access Journals (Sweden)

    Maršálek Roman

    2010-01-01

    Full Text Available Radio transmitters capable of transforming variable envelope signals into constant envelope signals can be associated with high-efficiency switched mode power amplifiers. One of the techniques providing this conversion is Polar Sigma-Delta ( architecture. This approach provides efficient solution for high-dynamic signals, and, moreover, it offers flexibility in a multiradio environment. The overall concept of the polar transmitter is presented here along with novel modifications and improvements. Namely, when recombining the envelope and the phase signals, it is suggested to replace the analog mixing by a digital mixing. The impact of a frequency synthesizer with a switched loop bandwidth and its imperfections on the overall polar architecture is investigated as well. The Mobile WiMAX standard has been chosen for validation due to very high requirements in terms of power dynamics and the variable channel bandwidth. Simulation results are presented in this paper, and advantages and drawbacks of this novel approach are pointed here as well.

  12. Detail study of SiC MOSFET switching characteristics

    DEFF Research Database (Denmark)

    Li, Helong; Munk-Nielsen, Stig

    2014-01-01

    This paper makes detail study of the latest SiC MOSFETs switching characteristics in relation to gate driver maximum current, gate resistance, common source inductance and parasitic switching loop inductance. The switching performance of SiC MOSFETs in terms of turn on and turn off voltage...... and current are presented. Switching losses analysis is made according to the experiment results. The switching characteristics study and switching losses analysis could give some guidelines of gate driver IC and gate resistance selection, switching losses estimation and circuit design of SiC MOSFETs....

  13. Characteristics of Commercial SiC and Synthetic SiC as an Aggregate in Geopolymer Composites

    Science.gov (United States)

    Irfanita, R.; Afifah, K. N.; Asrianti; Subaer

    2017-03-01

    This main objective of this study is to investigate the effect silicon carbide (SiC) as an aggregate on the mechanical strength and microstructure of the geopolymer composites. The geopolymers binder were produced by using alkaline activation method of metakaolin and cured at 70oC for 2 hours. In this study commercial and synthetic SiC were used as aggregate to produce composite structure. Synthetic SiC was produced from rice husk ash and coconut shell carbon calcined at 750oC for 2 hours. The addition of SiC in geopolymers paste was varied from 0.25g, 0.50g to 0.75g to form geopolymers composites. The chemical compositions and crystallinity level of SiC and the resulting composites were measured by means of Rigaku MiniFlexII X-Ray Diffraction (XRD). The microstructure of SiC and the composites were examined by using Tescan Vega3SB Scanning Electron Microscopy (SEM). The physical and mechanical properties of the samples were determined based on apparent porosity, bulk density, and three bending flexural strength measurements. The results showed that the commercial and synthetic SiC were effectively produced geopolymers composites with different microstructure, physical and mechanical strength.

  14. Silicon Carbide (SiC) Power Processing Unit (PPU) for Hall Effect Thrusters

    Science.gov (United States)

    Reese, Bradley

    2015-01-01

    Arkansas Power Electronics International (APEI), Inc., is developing a high-efficiency, radiation-hardened 3.8-kW SiC power supply for the PPU of Hall effect thrusters. This project specifically targets the design of a PPU for the high-voltage Hall accelerator (HiVHAC) thruster, with target specifications of 80- to 160-V input, 200- to 700-V/5A output, efficiency greater than 96 percent, and peak power density in excess of 2.5 kW/kg. The PPU under development uses SiC junction field-effect transistor power switches, components that APEI, Inc., has irradiated under total ionizing dose conditions to greater than 3 MRad with little to no change in device performance.

  15. A new type of white light-emitting diode light source basing on fluorescent SiC

    DEFF Research Database (Denmark)

    Ou, Haiyan; Ou, Yiyu; Lu, Weifang

    Most of the commercial white light-emitting diode (LED) light sources are made from phosphor coated blue-emitting gallium nitride (GaN) chips. This type white LED light source always has tradeoff between luminous efficacy and color rendering index (CRI). Furthermore, yellow-emitting phosphor decays...... much faster than the semiconductor chip, so the white color will turn into bluish over the time. This paper will propose a new type white LED light source: using fluorescent silicon carbide (SiC) to take the place of phosphor. This new type LED has the following advantages: a) SiC is a wide bandgap...... semiconductor material , so it is stable; b) Fluorescent SiC has very wide emission spectrum, and it could generate white light with very high CRI; c) It is a better substrate than sapphire for the GaN growth in terms of lattice match and thermal conductivity. This paper will cover: the growth of fluorescent Si...

  16. Studies on the Codeposition of SiC Nanopowder with Nickel, Cobalt, and Co-Ni Alloys

    Directory of Open Access Journals (Sweden)

    Ewa Rudnik

    2014-01-01

    Full Text Available Electrodeposition of SiC nanopowder (approximately 120 nm with nickel, cobalt, and Co-Ni alloy matrix was studied. It was found that particles suspended in the bath affect slightly the reduction of metallic ions. Incorporation of the ceramic particles was governed mainly by the morphology of the matrix surface, while no strict correlation between the amount of cobalt ions adsorbed on the powder and the SiC content in the composites was found. Microhardness of nickel deposits was 585±5 HV, while for cobalt-rich coatings (84–95 wt.% Co the values were in the range of 260–290 HV, independently of the SiC content in the coatings. Fine-grained nickel deposits were characterized by good corrosion resistance, while cobalt and Co-Ni alloys showed high corrosion current densities.

  17. Study by three techniques of the elastic response of Al(6061) matrix composite material with a high content (40 % vol) of SIC; Estudio mediante tres tecnicas del modulo elastico de un material compuesto de Al(6061) con un alto contenido (40%vol) de SiC

    Energy Technology Data Exchange (ETDEWEB)

    Fernandez, R.; Hunicke, U. D.; Mundt, K. H.; Acosta, P.; Kowalski, W.; Schulz, G.; Gonzalez-Doncel, G.

    2001-07-01

    The purpose of this investigation is to study the elastic behavior of a discontinuously reinforced composite material, Al(6061)-40vol%SiC, by using three different procedures; Extensometry in uniaxial testing, pendulum elastomeric, and propagation of acoustic signals in the materials. The high ceramic content of this material provides it with a high stiffness without a significant increase in density. Because of this, the material is suitable as structural component in the automotive and aerospace industry. (Author) 8 refs.

  18. Wettability of Ti3SiC2 by Ag-Cu and Ag-Cu-Ti melts

    OpenAIRE

    Dezellus, Olivier; Voytovych, R.; Li A., P.-H.; Constantin, G.; Bosselet, F.; Viala, J.C.

    2009-01-01

    International audience; Recently, the ternary carbide Ti3SiC2 has gained much attention due to its unique characteristics combining the properties of metals and ceramics (i.e., a low density, decent thermal and electrical conductivities, an excellent thermal shock resistance, a good machinability, damage tolerance, low friction and so on). The present study describes an investigation of the wettability in high vacuum of bulk Ti3SiC2 by a classical braze alloy based on the Ag-Cu-Ti system. Two...

  19. Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

    DEFF Research Database (Denmark)

    Wang, Weiqi; Gao, Feng; Yang, Yongheng

    2018-01-01

    This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... frequency. In order to reduce the switching times and also realize the zero current switching (ZCS) ability for the rear-end CSI, two modulation schemes are proposed for the H7 CSI with either superior output performance or minimal switching counts. Consequently, the proposed H7 CSI can be considered...

  20. Halogenation of SiC for band-gap engineering and excitonic functionalization

    OpenAIRE

    Drissi, L.B.; Ramadan, F. Z.; Lounis, S.

    2017-01-01

    The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their...

  1. Notes on the plasma resonance peak employed to determine doping in SiC

    Science.gov (United States)

    Engelbrecht, J. A. A.; van Rooyen, I. J.; Henry, A.; Janzén, E.; Sephton, B.

    2015-09-01

    The doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.

  2. Development of SiC Large Tapered Crystal Growth

    Science.gov (United States)

    Neudeck, Phil

    2011-01-01

    Research Focus Area: Power Electronics, Temperature Tolerant Devices. Demonstrate initial feasibility of totally new "Large Tapered Crystal" (LTC) process for growing vastly improved large-diameter wide-band gap wafers. Addresses Targets: The goal of this research is to experimentally investigate and demonstrate feasibility of the key unproven LTC growth processes in SiC. Laser-assisted growth of long SiC fiber seeds. Radial epitaxial growth enlargement of seeds into large SiC boules. Uniqueness and Impacts open a new technology path to large-diameter SiC and GaN wafers with 1000-fold defect density improvement at 2-4 fold lower cost. Leapfrog improvement in wide band gap power device capability and cost.

  3. SiC Avalanche Photodiodes and Arrays Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Aymont Technology, Inc. (Aymont) will demonstrate the feasibility of SiC p-i-n avalanche photodiodes (APD) arrays. Aymont will demonstrate 4 x 4 arrays of 2 mm2 APDs...

  4. Rapid degradation of azo dye Direct Black BN by magnetic MgFe{sub 2}O{sub 4}-SiC under microwave radiation

    Energy Technology Data Exchange (ETDEWEB)

    Gao, Jia; Yang, Shaogui, E-mail: yangsg@nju.edu.cn; Li, Na; Meng, Lingjun; Wang, Fei; He, Huan; Sun, Cheng

    2016-08-30

    Highlights: • MgFe{sub 2}O{sub 4}-SiC was first successfully synthesized. • MgFe{sub 2}O{sub 4}-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range. • Fast decolorization and high TOC removal of azo dye Direct Black BN with complicated structure could occur with MgFe{sub 2}O{sub 4}-SiC under MW radiation. • MgFe{sub 2}O{sub 4}-SiC had better MW absorbing property and higher MW catalytic activity than MnFe{sub 2}O{sub 4}-SiC under the same condition. • MgFe{sub 2}O{sub 4}-SiC was of practical use in the wastewater treatment. - Abstract: A novel microwave (MW) catalyst, MgFe{sub 2}O{sub 4} loaded on SiC (MgFe{sub 2}O{sub 4}-SiC), was successfully synthesized by sol-gel method, and pure MgFe{sub 2}O{sub 4} was used as reference. The MgFe{sub 2}O{sub 4} and MgFe{sub 2}O{sub 4}-SiC catalysts were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), N{sub 2} adsorption analyzer (BET specific surface area), X-ray photoelectron spectroscopy (XPS). The electromagnetic parameters of the prepared catalysts were measured by vector network analyzer. The reflection loss (RL) based on the electromagnetic parameters calculated in Matlab showed MgFe{sub 2}O{sub 4}-SiC attained the maximum absorbing value of 13.32 dB at 2.57 GHz, which reached extremely high RL value at low frequency range, revealing the excellent MW absorption property of MgFe{sub 2}O{sub 4}-SiC. MW-induced degradation of Direct Black BN (DB BN) over as-synthesized MgFe{sub 2}O{sub 4}-SiC indicated that degradation efficiency of DB BN (20 mg L{sup −1}) in 5 min reached 96.5%, the corresponding TOC removal was 65%, and the toxicity of DB BN after degradation by MgFe{sub 2}O{sub 4}-SiC obviously decreased. The good stability and applicability of MgFe{sub 2}O{sub 4}-SiC on the degradation process were also discovered. Moreover, the ionic chromatogram during degradation

  5. SiC power MOSFETs performance, robustness and technology maturity

    OpenAIRE

    Castellazzi, Alberto; Fayyaz, Asad; Romano, G; Yang, Li; Riccio, M.; Irace, A.

    2016-01-01

    Relatively recently, SiC power MOSFETs have transitioned from being a research exercise to becoming an industrial reality. The potential benefits that can be drawn from this technology in the electrical energy conversion domain have been amply discussed and partly demonstrated. Before their widespread use in the field, the transistors need to be thoroughly investigated and later validated for robustness and longer term stability and reliability. This paper proposes a review of commercial SiC ...

  6. Synthesis of micro-sized interconnected Si-C composites

    Science.gov (United States)

    Wang, Donghai; Yi, Ran; Dai, Fang

    2016-02-23

    Embodiments provide a method of producing micro-sized Si--C composites or doped Si--C and Si alloy-C with interconnected nanoscle Si and C building blocks through converting commercially available SiO.sub.x (0

  7. Effect of Residual Gas Composition on Epitaxial Growth of Graphene on SiC

    Science.gov (United States)

    Kunc, J.; Rejhon, M.; Belas, E.; Dědič, V.; Moravec, P.; Franc, J.

    2017-10-01

    In recent years, graphene growth optimization has been one of the key routes towards large-scale, high-quality graphene production. We measure in situ residual gas content during epitaxial-graphene growth on silicon carbide (SiC) to find detrimental factors of epitaxial-graphene growth. The growth conditions in high vacuum, in argon, purified argon, and the flow of argon are compared. The grown epitaxial graphene is studied by Raman-scattering mapping. We determine mechanical strain, number of graphene layers and the graphene quality. The surface topography is measured by atomic force microscopy. Charge density and carrier mobility are studied by Hall-effect measurements in van der Pauw configuration. We identify the major role of the chemical reaction of carbon and residual water. The rate of the reaction is lowered when purified argon is used. We also show that, according to time-varying gas content, it is preferable to grow graphene at higher temperatures and shorter times. Other sources of growth environment contamination are also discussed. The reaction of residual gas and SiC is discussed as one of the factors decreasing the lateral size of SiC atomically flat terraces and leading to their irregular shape. The importance of purified argon and its sufficient flow rate is concluded to be important for high-quality graphene growth as it reduces the rate of undesired chemical reactions and provides a more stable and defined growth ambient.

  8. NOVEL TECHNIQUE OF POWER CONTROL IN MAGNETRON TRANSMITTERS FOR INTENSE ACCELERATORS

    Energy Technology Data Exchange (ETDEWEB)

    Kazakevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M.; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

    2016-10-21

    A novel concept of a high-power magnetron transmitter allowing dynamic phase and power control at the frequency of locking signal is proposed. The transmitter compensating parasitic phase and amplitude modulations inherent in Superconducting RF (SRF) cavities within closed feedback loops is intended for powering of the intensity-frontier superconducting accelerators. The con- cept uses magnetrons driven by a sufficient resonant (in- jection-locking) signal and fed by the voltage which can be below the threshold of self-excitation. This provides an extended range of power control in a single magnetron at highest efficiency minimizing the cost of RF power unit and the operation cost. Proof-of-principle of the proposed concept demonstrated in pulsed and CW regimes with 2.45 GHz, 1kW magnetrons is discussed here. A conceptual scheme of the high-power transmitter allowing the dynamic wide-band phase and y power controls is presented and discussed.

  9. SIC-BASED HYDROGEN SELECTIVE MEMBRANES FOR WATER-GAS-SHIFT REACTION

    Energy Technology Data Exchange (ETDEWEB)

    Paul K.T. Liu

    2003-12-01

    A hydrogen selective membrane as a membrane reactor (MR) can significantly improve the power generation efficiency with a reduced capital and operating cost for the waster-gas-shift reaction. Existing hydrogen selective ceramic membranes are not suitable for the proposed MR due to their poor hydrothermal stability. In this project we have focused on the development of innovative silicon carbide (SiC) based hydrogen selective membranes, which can potentially overcome this technical barrier. SiC macro-porous membranes have been successfully fabricated via extrusion of commercially available SiC powder. Also, an SiC hydrogen selective thin film was prepared via our CVD/I technique. This composite membrane demonstrated excellent hydrogen selectivity at high temperature ({approx}600 C). More importantly, this membrane also exhibited a much improved hydrothermal stability at 600 C with 50% steam (atmospheric pressure) for nearly 100 hours. In parallel, we have explored an alternative approach to develop a H{sub 2} selective SiC membrane via pyrolysis of selected pre-ceramic polymers and sol-gel techniques. Building upon the positive progress made in the membrane development study, we conducted an optimization study to develop an H{sub 2} selective SiC membrane with sufficient hydrothermal stability suitable for the WGS environment. In addition, mathematical simulation has been performed to compare the performance of the membrane reactor (MR) vs conventional packed bed reactor for WGS reaction. Our result demonstrates that >99.999% conversion can be accomplished via WGS-MR using the hydrogen selective membrane developed by us. Further, water/CO ratio can be reduced, and >97% hydrogen recovery and <200 ppm CO can be accomplished according to the mathematical simulation. Thus, we believe that the operating economics of WGS can be improved significantly based upon the proposed MR concept. In parallel, gas separations and hydrothermal and long-term-storage stability of the

  10. Surgical implantation of transmitters into fish

    Science.gov (United States)

    Mulcahy, Daniel M.

    2003-01-01

    Although the Animal Welfare Act does not cover poikilotherms, individual institutions and policies and legal requirements other than the Animal Welfare Act (e.g., the US Public Health Service and the Interagency Research Animal Committee's Principles for the Utilization and Care of Vertebrate Animals Used in Testing, Research, and Training) require the review of projects involving fish by institutional animal care and use committees (IACUCs). IACUCs may, however, lack the knowledge and experience to evaluate fish projects judiciously, especially when the projects are in field settings. Surgeries involving implantation of transmitters and other instruments into the coelom, which now comprise a very common research tool in the study of free-ranging fishes, are examples of surgeries that use a broad spectrum of surgical and anesthetic techniques, some of which would not be considered acceptable for similar work on mammals. IACUCs should apply the standards they would expect to be used for surgeries on homeotherms to surgeries on fish. Surgeons should be carefully trained and experienced. Surgical instruments and transmitters should be sterile. Regulations and laws on the use of drugs in animals should be followed, particularly those concerned with anesthetics and antibiotics used on free-ranging fish. Exceptions to surgical procedures should be made only when circumstances are extreme enough to warrant the use of less than optimal procedures.

  11. Development of nanoporous TiO2 and SiC membranes for membrane filtration

    DEFF Research Database (Denmark)

    König, Katja; Vigna, Erika; Farsi, Ali

    Reverse osmosis membranes are increasingly used for the production of drinking water (desalination of sea water or brackish water), for demineralisation of water in industrial processes (boiled feed water, microelectronics production) as well as in food processing and pharmaceutical production....... Today´s reverse osmosis membranes are made of polymers; however, these membranes have several technical limitations, for example, low water fluxes and high sensitivity to oxidizing chemicals. Since membrane fouling is still a major problem in reverse osmosis desalination plants, replacement of polymer...... reverse osmosis membranes by ceramic counterparts would provide higher fluxes and allow more efficient cleaning of the membranes. The aim of this work was to prepare defect-free nanoporous ceramic (TiO2 and SiC) layers on macroporous SiC supports by using electrophoretic deposition and dip...

  12. Synthesis of biomorphic SiC and SiO2 ceramics

    Directory of Open Access Journals (Sweden)

    ADELA EGELJA

    2008-07-01

    Full Text Available Coniferous wood (fir was transformed by pyrolysis into carbon preforms, which were subsequently converted into biomorphic ceramics by the pressure infiltration technique with colloidal silica. An in situ reaction between the silica and the carbon template occurred in the cellular wall at a high sintering temperature. Depending on the employed atmosphere, non-oxide (SiC or oxide (SiO2 ceramics were obtained. The morphology of the resulting porous ceramics and their phase composition were investigated by scanning electron microscopy (SEM/EDX and X-ray diffraction (XRD. The experimental results showed that the biomorphic cellular morphology of the wood maintained in both the SiC and silica ceramics, which consisted of only the b-SiC phase and SiO2, respectively.

  13. Behavior of sandhill cranes harnessed with different satellite transmitters

    Science.gov (United States)

    Olsen, Glenn H.; Ellis, D.H.; Landfried, S.E.; Miller, L.H.; Klugman, S.S.; Fuller, M.R.; Vermillion, C.H.

    1992-01-01

    The effectiveness of various attachment methods and designs of platform transmitting terminals (PTT's) was tested on captive sandhill cranes (Grus canadensis) at the Patuxent Wildlife Research Center, Laurel, Maryland, during 1989-91. Combinations of attachment and transmitter designs included neoprene cord harness with batteries separate from the transmitter (2 harness designs), Teflon ribbon harness with batteries incorporated into the transmitter package (4 transmitter models), and a package attached directly to the bird with epoxy glue only. Physical effects seen on cranes wearing PTT's ranged from skin lacerations (caused by rubbing of harness material) to no observed effects (other than feather wear). The most successful harness material and design utilized a Teflon ribbon harness with the 4 ribbon ends from the transmitter forming a neck loop and a body loop joined at the sternum. Time spent by sandhill cranes performing most activities did not change after transmitter attachment using this harness method.

  14. Automobile windscreen rake, spectacle lenses, and effective transmittance.

    Science.gov (United States)

    Walsh, Glyn

    2009-12-01

    To investigate the effect of windscreen rake angle on effective transmittance and the contribution of spectacle lenses to the total transmittance of the system. Theoretical analysis has been carried out using the Fresnel reflectance equations. Windscreen rake can reduce effective transmittance significantly at angles present on modern aerodynamic vehicles. Spectacle lenses reduce the total transmittance still further, often to below the minimum level permissible in current international standards for windscreens. Drivers should always be supplied antireflection-coated lenses where there is a chance of their spectacles being used for night-time driving, if current International standards for windscreen transmittance are to be met by the spectacle-windscreen combination. Windscreen rake angle should be accounted for both in the International Organization for Standardization transmittance standards and in roadside testing devices.

  15. The Effect of an Externally Attached Neutrally Buoyant Transmitter on Mortal Injury during Simulated Hydroturbine Passage

    Energy Technology Data Exchange (ETDEWEB)

    Brown, Richard S.; Pflugrath, Brett D.; Carlson, Thomas J.; Deng, Zhiqun

    2012-02-03

    On their seaward migration, juvenile salmonids commonly pass hydroelectric dams. Fish passing through hydroturbines experience a rapid decrease in pressure as they pass by the turbine blade and the severity of this decompression can be highly variable. This rapid decrease in pressure can result in injuries such as swim bladder rupture, exophthalmia, and emboli and hemorrhaging in the fins and tissues. However, recent research indicates that the presence of a telemetry tag (acoustic, radio, inductive) implanted inside the coelom of a juvenile salmon increases the likelihood that the fish will be injured or die during turbine passage. Thus, previous research conducted using telemetry tags implanted into the coelom of fish may have been inaccurate. Thus, a new technique is needed to provide unbiased estimates of survival through turbines. This research provides an evaluation of the effectiveness of a neutrally buoyant externally attached acoustic transmitter. Both nontagged fish and fish tagged with a neutrally buoyant external transmitter were exposed to a range of rapid decompressions simulating turbine passage. Juvenile Chinook salmon tagged with a neutrally buoyant externally attached acoustic transmitter did not receive a higher degree of barotrauma than their nontagged counterparts. We suggest that future research include field-based comparisons of survival and behavior among fish tagged with a neutrally buoyant external transmitter and those internally implanted with transmitters.

  16. Capacitor-Shunted Transmitter for Power Reduction in Inductive-Coupling Clock Link

    Science.gov (United States)

    Kumar, Amit; Miura, Noriyuki; Kuroda, Tadahiro

    2008-04-01

    The importance of low-power and high-speed chip-to-chip communication between stacked chips is increasing in system in a package (SiP) systems. Wireless chip-to-chip communication is a promising technology that can increase the speed of inter-chip data transfer with very little area and power overhead. The wireless clock link in this scheme consumes more power than wireless data circuits. To reduce the overall power consumption we need to reduce the power consumed in the clock link of the circuit. In this paper we present a simple yet effective transmitter circuit, namely a capacitor-shunted transmitter, to reduce the power consumed in the clock transmitter. The simulation is carried out in spectre, and, to confirm the simulation result, a test chip is fabricated using Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 µm complementary metal-oxide-semiconductor (CMOS). The simulation results and the test chip measurement results show that the power consumption of the clock transmitter circuit is reduced by 50% because of the capacitor-shunted transmitter circuit.

  17. Radio-transmitters have no impact on survival of pre-fledged American Woodcocks

    Science.gov (United States)

    Daly, Kyle O.; Andersen, David E.; Brininger, Wayne L.; Cooper, Thomas R.

    2015-01-01

    American Woodcocks (Scolopax minor) are a high priority species of conservation need across most of their breeding range due to long-term population declines. Survival of juveniles may be key to understanding these population declines, but there have been few direct estimates of juvenile woodcock survival rates, and no recent assessment of the possible effect of radio-tagging on juvenile survival. In 2011 and 2012, we radio-tagged 73 juvenile American Woodcocks in west-central Minnesota and compared survival rates of radio-tagged (N = 58) and non-radio-tagged (N = 82) juveniles during the period from hatching to fledging. We compared survival rates of juveniles with known fates and used logistic-exposure models to assess the potential impact of radio-transmitters on survival. We evaluated variables related to juvenile survival including age, hatch date, maximum and minimum temperature, precipitation, and year to assess the possible effects of radio-transmitters. The best-supported model of survival rate of juvenile American Woodcocks included the interaction of age and year and a negative effect of precipitation (β = −0.76, 85% CI: −1.08 to −0.43), but did not include a negative effect of transmitters. Our results suggest that radio-transmitters did not impact survival of juvenile American Woodcocks and that transmitters are a reliable tool for studying survival of juvenile American Woodcocks, and perhaps other precocial shorebirds.

  18. Solar energy transmittance of translucent samples. A comparison between large and small integrating sphere measurements

    Energy Technology Data Exchange (ETDEWEB)

    Chevalier, B.; Olive, F. [CSTB, Grenoble (France); Hutchins, M.G.; Squire, T. [School of Engineering, Oxford Brookes University, Headington, Gipsy Lane Campus, Oxford OX3 0BP (United Kingdom); Maccari, A. [ENEA, Rome (Italy); Oversloot, H. [TNO, Delft (Netherlands); Platzer, W. [ISES, Freiburg (Germany); Polato, P. [SSV, Murano (Italy); Roos, A. [Uppsala University, Uppsala (Sweden); Rosenfeld, J.L.J. [University of Wales, Cardiff (United Kingdom); Yoshimura, K. [NIRIN, Nagoya (Japan)

    1998-07-13

    Optical transmittance and reflectance of a translucent plastic PTFE film have been measured over the solar wavelength range using different integrating spheres. The same sample has been measured with small and large spheres and the total solar transmittance has been obtained from both broad band measurements and from integration of spectral data. The fact that the sum of reflectance and transmittance often exceeds 100% shows that all types of spheres tend to overestimate the transmittance of this highly scattering sample. This error can be attributed to the sphere geometry in combination with the light scattering properties of the sample, and unless proper correction of recorded data is carried out the error may be as large as 5-10%. Some specific errors are presented and an approximate correction procedure is suggested.These results show that there is a need for a transmittance standard which can be used to calibrate integrating spheres. Such a standard with negligible thickness would be especially useful for measurements with large, broadband integrating spheres, but would also be helpful for the correct handling of data from small spectral instruments

  19. Halogenation of SiC for band-gap engineering and excitonic functionalization.

    Science.gov (United States)

    Drissi, Lalla Btissam; Ramadan, Fatima Zahra; Lounis, Samir

    2017-09-11

    The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their realization in laboratory is thus possible. Large band-gaps of the order of 4 eV are found in the so-called GW approximation, with the occurrence of bright excitons, optically active in the four investigated materials. Their binding energies vary from 0.9 eV to 1.75 eV depending on the decoration choice and in one case, a dark exciton is foreseen to exist in the fully chlorinated SiC. The wide variety of opto-electronic properties suggest halogenated SiC as interesting materials with potential not only for solar cell applications, anti-reflection coatings or high-reflective systems but also for a possible realization of excitonic Bose-Einstein condensation. © 2017 IOP Publishing Ltd.

  20. Halogenation of SiC for band-gap engineering and excitonic functionalization

    Science.gov (United States)

    Drissi, L. B.; Ramadan, F. Z.; Lounis, S.

    2017-11-01

    The optical excitation spectra and excitonic resonances are investigated in systematically functionalized SiC with Fluorine and/or Chlorine utilizing density functional theory in combination with many-body perturbation theory. The latter is required for a realistic description of the energy band-gaps as well as for the theoretical realization of excitons. Structural, electronic and optical properties are scrutinized and show the high stability of the predicted two-dimensional materials. Their realization in laboratory is thus possible. Large band-gaps of the order of 4 eV are found in the so-called GW approximation, with the occurrence of bright excitons, optically active in the four investigated materials. Their binding energies vary from 0.9 eV to 1.75 eV depending on the decoration choice and in one case, a dark exciton is foreseen to exist in the fully chlorinated SiC. The wide variety of opto-electronic properties suggest halogenated SiC as interesting materials with potential not only for solar cell applications, anti-reflection coatings or high-reflective systems but also for a possible realization of excitonic Bose–Einstein condensation.

  1. Fiber/matrix interfaces for SiC/SiC composites: Multilayer SiC coatings

    Energy Technology Data Exchange (ETDEWEB)

    Halverson, H.; Curtin, W.A. [Virginia Polytechnic Institute and State Univ., Blacksburg, VA (United States)

    1996-08-01

    Tensile tests have been performed on composites of CVI SiC matrix reinforced with 2-d Nicalon fiber cloth, with either pyrolitic carbon or multilayer CVD SiC coatings [Hypertherm High-Temperature Composites Inc., Huntington Beach, CA.] on the fibers. To investigate the role played by the different interfaces, several types of measurements are made on each sample: (i) unload-reload hysteresis loops, and (ii) acoustic emission. The pyrolitic carbon and multilayer SiC coated materials are remarkably similar in overall mechanical responses. These results demonstrate that low-modulus, or compliant, interface coatings are not necessary for good composite performance, and that complex, hierarchical coating structures may possibly yield enhanced high-temperature performance. Analysis of the unload/reload hysteresis loops also indicates that the usual {open_quotes}proportional limit{close_quotes} stress is actually slightly below the stress at which the 0{degrees} load-bearing fibers/matrix interfaces slide and are exposed to atmosphere.

  2. An Energy Harvesting Underwater Acoustic Transmitter for Aquatic Animals

    OpenAIRE

    Huidong Li; Chuan Tian; Jun Lu; Myjak, Mitchell J.; Martinez, Jayson J.; Brown, Richard S.; Zhiqun Daniel Deng

    2016-01-01

    Acoustic telemetry is the primary method to actively track aquatic animals for behavioral studies. However, the small storage capacities of the batteries used in the transmitters limit the time that the implanted animals can be studied. In this research, we developed and implemented a battery-free acoustic transmitter that uses a flexible piezoelectric beam to harvest energy from fish swimming as the power source. The transmitter sends out a unique identification code with a sufficiently stro...

  3. Opportunistic transmitter selection for selfless overlay cognitive radios

    KAUST Repository

    Shaqfeh, Mohammad

    2013-11-01

    We propose an opportunistic strategy to grant channel access to the primary and secondary transmitters in causal selfless overlay cognitive radios over block-fading channels. The secondary transmitter helps the primary transmitter by relaying the primary messages opportunistically, aided by a buffer to store the primary messages temporarily. The optimal channel-aware transmitter- selection strategy is the solution of the maximization of the average secondary rate under the average primary rate requirement and the buffer stability constraints. Numerical results demonstrate the gains of the proposed opportunistic selection strategy. © 2013 IEEE.

  4. Methods of Phase and Power Control in Magnetron Transmitters for Superconducting Accelerators

    Energy Technology Data Exchange (ETDEWEB)

    Kazadevich, G. [MUONS Inc., Batavia; Johnson, R. [MUONS Inc., Batavia; Neubauer, M. [MUONS Inc., Batavia; Lebedev, V. [Fermilab; Schappert, W. [Fermilab; Yakovlev, V. [Fermilab

    2017-05-01

    Various methods of phase and power control in magnetron RF sources of superconducting accelerators intended for ADS-class projects were recently developed and studied with conventional 2.45 GHz, 1 kW, CW magnetrons operating in pulsed and CW regimes. Magnetron transmitters excited by a resonant (injection-locking) phasemodulated signal can provide phase and power control with the rates required for precise stabilization of phase and amplitude of the accelerating field in Superconducting RF (SRF) cavities of the intensity-frontier accelerators. An innovative technique that can significantly increase the magnetron transmitter efficiency at the widerange power control required for superconducting accelerators was developed and verified with the 2.45 GHz magnetrons operating in CW and pulsed regimes. High efficiency magnetron transmitters of this type can significantly reduce the capital and operation costs of the ADSclass accelerator projects.

  5. Taking SiC Power Devices to the Final Frontier: Addressing Challenges of the Space Radiation Environment

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan

    2017-01-01

    Silicon carbide power device technology has the potential to enable a new generation of aerospace power systems that demand high efficiency, rapid switching, and reduced mass and volume in order to expand space-based capabilities. For this potential to be realized, SiC devices must be capable of withstanding the harsh space radiation environment. Commercial SiC components exhibit high tolerance to total ionizing dose but to date, have not performed well under exposure to heavy ion radiation representative of the on-orbit galactic cosmic rays. Insertion of SiC power device technology into space applications to achieve breakthrough performance gains will require intentional development of components hardened to the effects of these highly-energetic heavy ions. This work presents heavy-ion test data obtained by the authors over the past several years for discrete SiC power MOSFETs, JFETs, and diodes in order to increase the body of knowledge and understanding that will facilitate hardening of this technology to space radiation effects. Specifically, heavy-ion irradiation data taken under different bias, temperature, and ion beam conditions is presented for devices from different manufacturers, and the emerging patterns discussed.

  6. Phase Analysis of Laser Direct Etching and Water Assisted Laser Combined Etching of SiC Ceramics

    Science.gov (United States)

    Yuan, Genfu; Cong, Qidong; Zhang, Chen; Xie, Bingbing

    2017-11-01

    In this study, to discover the etching mechanism of SiC ceramics under laser direct etching and water-jet assisted laser combined etching, the phenomena of substance change on the etched surface were investigated. Also, the rules of substance transfer in etching are discussed. The elemental content change and the phase change of the etching products on the etched surface were analyzed by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD), respectively. These studies showed a high amount of carbon black on the etched surface, because of the decomposition of SiC ceramics under the high-power-density laser irradiation. SiC decomposed to Si under the laser irradiation, and the subsequent chemical reaction of Si and O2 easily produced SiO2. The SiO2 on the etched surface melted and vaporized, whereas most of SiO2 was removed through splashing, changing the chemical composition of the etched surface. Following the water jet introduction, an increased amount of O existed on the combined etching surface, because the chemical reaction of SiC and H2O easily produced SiO2 under the high-power-density laser irradiation.

  7. Phase Analysis of Laser Direct Etching and Water Assisted Laser Combined Etching of SiC Ceramics

    Science.gov (United States)

    Yuan, Genfu; Cong, Qidong; Zhang, Chen; Xie, Bingbing

    2017-12-01

    In this study, to discover the etching mechanism of SiC ceramics under laser direct etching and water-jet assisted laser combined etching, the phenomena of substance change on the etched surface were investigated. Also, the rules of substance transfer in etching are discussed. The elemental content change and the phase change of the etching products on the etched surface were analyzed by energy dispersive spectroscopy (EDS) and X-ray diffraction (XRD), respectively. These studies showed a high amount of carbon black on the etched surface, because of the decomposition of SiC ceramics under the high-power-density laser irradiation. SiC decomposed to Si under the laser irradiation, and the subsequent chemical reaction of Si and O2 easily produced SiO2. The SiO2 on the etched surface melted and vaporized, whereas most of SiO2 was removed through splashing, changing the chemical composition of the etched surface. Following the water jet introduction, an increased amount of O existed on the combined etching surface, because the chemical reaction of SiC and H2O easily produced SiO2 under the high-power-density laser irradiation.

  8. Technology roadmap for development of SiC sensors at plasma processes laboratory

    Directory of Open Access Journals (Sweden)

    Mariana Amorim Fraga

    2010-08-01

    Full Text Available Recognizing the need to consolidate the research and development (R&D activities in microelectronics fields in a strategic manner, the Plasma Processes Laboratory of the Technological Institute of Aeronautics (LPP-ITA has established a technology roadmap to serve as a guide for activities related to development of sensors based on silicon carbide (SiC thin films. These sensors have also potential interest to the aerospace field due to their ability to operate in harsh environment such as high temperatures and intense radiation. In the present paper, this roadmap is described and presented in four main sections: i introduction, ii what we have already done in the past, iii what we are doing in this moment, and iv our targets up to 2015. The critical technological issues were evaluated for different categories: SiC deposition techniques, SiC processing techniques for sensors fabrication and sensors characterization. This roadmap also presents a shared vision of how R&D activities in microelectronics should develop over the next five years in our laboratory.

  9. [SIC algorithm based model updating for near infrared analysis of Salvia miltiorrhiza alcohol extraction process].

    Science.gov (United States)

    Jia, Shuai-Yun; Xu, Bing; Yang, Chan; Cui, Xiang-Long; Shi, Xin-Yuan; Qiao, Yan-Jiang

    2016-03-01

    The near-infrared (NIR) spectroscopy for offline monitoring of alcohol extraction process of Salvia miltiorrhiza was investigated, with high performance liquid chromatography (HPLC) determination of value for reference. The partial least squares method was adopted to establish the tanshinone ⅡA quantitative calibration model, so as to detect extraction process of Salvia miltiorrhiza. Because the differences between batches of raw materials may endanger the robustness of the original model, the simple interval calculation (SIC) was applied in updating the near-infrared quantitative model for traditional Chinese medicine extraction process for the first time, and compared with Random Selection (RS) method. SIC's final updating results showed that root mean square with cross validation (RMSECV), root mean square error of prediction (RMSEP) and residual predictive deviation (RPD) of tanshinone ⅡA were 0.006 8 g•L⁻¹, 0.005 4 g•L⁻¹ and 3.14, respectively; but RS' final updating results showed that RMSECV, RMSEP and RPD were 0.006 4 g•L⁻¹, 0.006 8 g•L⁻¹ and 2.50, respectively. This study suggested that SIC is superior to RS, and provided a research foundation for quality control and monitoring of S. miltiorrhiza extraction process in the future. Copyright© by the Chinese Pharmaceutical Association.

  10. 240 GHz EPR Studies of Intrinsic Defects in 4H SiC

    Science.gov (United States)

    Konovalov, V. V.; Zvanut, M. E.; van Tol, J.; Brunel, L.-C.

    2002-03-01

    Intrinsic defects may strongly influence the conductivity and optical behavior of SiC. Several groups have reported 9.5 GHz EPR studies of a carbon vacancy in electron irradiated p-type and as-grown nominally semi-insulating SiC. Recently, Son et al. interpreted two lines in a 95 GHz EPR spectrum as a carbon vacancy and silicon antisite. We report 240 GHz EPR studies of intrinsic defects in as-grown 4H SiC provided by Cree Inc. The ID-1 line we observed earlier at 9.5 GHz and assigned to a carbon vacancy was resolved at 240 GHz into two lines, ID-1a and ID-1b. As the temperature decreased from 80 to 4 K, with H//c-axis the g-value of ID-1a remained constant at 2.00307, but the g-value of ID-1b decreased from 2.00272 to 2.00235. Concomitantly, the intensity of ID-1a decreased while that of ID-1b increased. Although our data are close to Son’s 95 GHz spectrum, preliminary interpretation of the highly resolved lines obtained at 240 GHz does not suggest a silicon antisite. Illumination with IR light quenches both ID-1a and ID-1b simultaneously, indicating close defect levels. The work is supported by the ONR.

  11. Auxiliary VHF transmitter to aid recovery of solar Argos/GPS PTTs

    Science.gov (United States)

    Christopher P. Hansen; Mark A. Rumble; R. Scott Gamo; Joshua J. Millspaugh

    2014-01-01

    While conducting greater sage-grouse (Centrocercus urophasianus) research, we found that solar-powered global positioning systems platform transmitter terminals (GPS PTTs) can be lost if the solar panel does not receive adequate sunlight. Thus, we developed 5-g (mortality sensor included; Prototype A) and 9.8-g (no mortality sensor; Prototype B) auxiliary very high...

  12. PENGARUH PEMBELAJARAN TEAM ASSISTED INDIVIDUALIZATION (TAI BERBANTUAN MEDIA SMART AND INTERESTING CARD (SIC TERHADAP HASIL BELAJAR SISWA

    Directory of Open Access Journals (Sweden)

    Kun Khuriya Pratiwi

    2015-11-01

    Full Text Available This experiment aimed to determine the influence of student’s learning outcomes of Senior High School (SHS in Parakan through the application of TAI (Team Assisted Individualization assisted of SIC (Smart and Interesting Card media on the subject of redox reaction. The population in this experiment were X grade students Senior High School (SHS in Parakan of the school year 2011/2012. Determination of the sample used cluster random sampling system that obtained two classes where X-3 as an experimental group that was treated by using TAI method assisted by SIC media and X-4 as a control group that was treated conventional methods. The research data was obtained by the method of documentation, testing, questionnaire and observation. The final analysis methods are normalization test, the similarity of two varians test, difference of two average test, gain test, biserial correlation, determination coefficient and analysis of questionnaire and observation sheet. The results showed that experiment class better than the control class. The results of study obtained results of the experimental group had an average 76,78 and a control group had an average of 67,82. TAI method assisted by SIC media give contribution to the learning outcome as 30%.Key words: TAI learning, SIC media 

  13. Design Parameters of a Miniaturized Piezoelectric Underwater Acoustic Transmitter

    Directory of Open Access Journals (Sweden)

    Thomas J. Carlson

    2012-07-01

    Full Text Available PZT ceramics have been widely used in underwater acoustic transducers. However, literature available discussing the design parameters of a miniaturized PZT-based low-duty-cycle transmitter is very limited. This paper discusses some of the design parameters—the backing material, driving voltage, PZT material type, power consumption and the transducer length of a miniaturized acoustic fish tag using a PZT tube. Four different types of PZT were evaluated with respect to the source level, energy consumption and bandwidth of the transducer. The effect of the tube length on the source level is discussed. The results demonstrate that ultralow-density closed-cell foam is the best backing material for the PZT tube. The Navy Type VI PZTs provide the best source level with relatively low energy consumption and that a low transducer capacitance is preferred for high efficiency. A 35% reduction in the transducer length results in 2 dB decrease in source level.

  14. Effect Of SiC Particles On Sinterability Of Al-Zn-Mg-Cu P/M Alloy

    Directory of Open Access Journals (Sweden)

    Rudianto H.

    2015-06-01

    Full Text Available Premix Al-5.5Zn-2.5Mg-0.5Cu alloy powder was analyzed as matrix in this research. Gas atomized powder Al-9Si with 20% volume fraction of SiC particles was used as reinforcement and added into the alloy with varied concentration. Mix powders were compacted by dual action press with compaction pressure of 700 MPa. High volume fraction of SiC particles gave lower green density due to resistance of SiC particles to plastic deformation during compaction process and resulted voids between particles and this might reduce sinterability of this mix powder. Sintering was carried out under ultra high purity nitrogen gas from 565°-580°C for 1 hour. High content of premix Al-5.5Zn-2.5Mg-0.5Cu alloy powder gave better sintering density and reached up to 98% relative. Void between particles, oxide layer on aluminum powder and lower wettability between matrix and reinforcement particles lead to uncompleted liquid phase sintering, and resulted on lower sintering density and mechanical properties on powder with high content of SiC particles. Mix powder with wt90% of Alumix 431D and wt10% of Al-9Si-vf20SiC powder gave higher tensile strength compare to another mix powder for 270 MPa. From chemical compositions, sintering precipitates might form after sintering such as MgZn2, CuAl2 and Mg2Si. X-ray diffraction, DSC-TGA, and SEM were used to characterize these materials.

  15. The spatial distribution features of three Alpha transmitter signals at the topside ionosphere

    Science.gov (United States)

    Zhang, X.; Zhao, S. F.; Ruzhin, Y.; Liu, Jing; Song, R.

    2017-05-01

    The spatial distribution features of electric field over three Alpha transmitters in Russia were analyzed based on the Demeter satellite records at local nighttime during the solar minimum in December of 2008, where the three transmitters are with the same emitted power of 500 kW and the same radio waves at 11.9 kHz, 12.6 kHz, and 14.9 kHz. The results of observations showed that the maximal electric field reached -80 to -70 dB (hereafter referred as to V/m) at 660 km altitude, and the horizontal covered area even exceeded 80° in longitude with electric field above -100 dB at 14.9 kHz. The lowest electric field and the smallest longitude scale were detected over Krasnodar (KRA), which is demonstrated that the lower ionosphere plays an important role in attenuating the energy as suggested by the simulation results from the full-wave propagation model. Another feature over KRA was the significant decrease in electromagnetic field strength at 11.9 kHz and 12.6 kHz, being one order of magnitude lower than the other two transmitters, where the lower hybrid resonance waves affected severely the whistler mode wave mode propagation. Compared with the ground very low frequency observations at Tonghai and Ya'an in China, the most complex variations were observed from KRA, while the east transmitter Khabarovsk maintained high strength of electromagnetic power in a longer distance than the middle transmitter Novosibirsk in local nighttime, which is consistent with the large covering scale in the topside ionosphere due to the enhancement by wave-particle interaction from the other transmitter.

  16. CMOS Transmitter using Pulse-Width Modulation Pre-Emphasis achieving 33dB Loss Compensation at 5-Gb/s

    NARCIS (Netherlands)

    Schrader, J.H.R.; Klumperink, Eric A.M.; Visschers, J.L.; Nauta, Bram

    2005-01-01

    A digital transmitter pre-emphasis technique is presented that is based on pulse-width modulation, instead of finite impulse response (FIR) filtering. The technique fits well to future high-speed low-voltage CMOS processes. A 0.13 /spl mu/m CMOS transmitter achieves more than 5 Gb/s (2-PAM) over 25

  17. CMOS Transmitter using Pulse-Width Modulation Pre-Emphasis achieving 33dB Loss Compensation at 5-Gb/s

    NARCIS (Netherlands)

    Schrader, J.H.R.; Klumperink, Eric A.M.; Visschers, J.L.; Nauta, Bram

    A digital transmitter pre-emphasis technique is presented that is based on pulse-width modulation, instead of finite impulse response (FIR) filtering. The technique fits well to future high-speed low-voltage CMOS processes. A 0.13 μm CMOS transmitter achieves more than 5 Gb/s (2-PAM) over 25 m of

  18. An Energy Harvesting Underwater Acoustic Transmitter for Aquatic Animals

    Energy Technology Data Exchange (ETDEWEB)

    Li, Huidong; Tian, Chuan; Lu, Jun; Myjak, Mitchell J.; Martinez, Jayson J.; Brown, Richard S.; Deng, Zhiqun

    2016-09-20

    This paper presents a self-powered underwater acoustic transmitter using a piezoelectric beam to harvest the mechanical energy from fish swimming. This transmitter does not require a battery and is demonstrated in live fish. It transmits an acoustic waveform as the implanted fish swims. It enables long-term monitoring of aquatic animals.

  19. Evaluation of vaginal implant transmitters in elk (Cervus elaphus nelsoni).

    Science.gov (United States)

    Bruce K. Johnson; Terrance McCoy; Christopher O. Kochanny; Rachel C. Cook

    2006-01-01

    The effects of vaginal implant transmitters for tissue damage after 11 wk in 13 captive adult elk (Cervus elaphus nelsoni) and subsequent reproductive performance in 38 free-ranging elk were evaluated. Vaginal implant transmitters are designed to be shed at parturition and are used to locate birth sites of wild ungulates; however, potential adverse...

  20. 47 CFR 22.165 - Additional transmitters for existing systems.

    Science.gov (United States)

    2010-10-01

    .... (b) Antenna structure registration. Certain antenna structures must be registered with the Commission... contours of the additional transmitter(s) must be totally encompassed by the composite interfering contour... composite service area contour and predicted interfering contour, respectively, of the existing station on...

  1. Juvenile Salmon Acoustic Telemetry System Transmitter Downsize Assessment

    Energy Technology Data Exchange (ETDEWEB)

    Carlson, Thomas J.; Myjak, Mitchell J.

    2010-04-30

    At the request of the U.S. Army Corps of Engineers, Portland District, researchers from Pacific Northwest National Laboratory investigated the use of an application-specific integrated circuit (ASIC) to reduce the weight and volume of Juvenile Salmon Acoustic Telemetry System (JSATS) transmitters while retaining current functionality. Review of the design of current JSATS transmitters identified components that could be replaced by an ASIC while retaining the function of the current transmitter and offering opportunities to extend function if desired. ASIC design alternatives were identified that could meet transmitter weight and volume targets of 200 mg and 100 mm3. If alternatives to the cylindrical batteries used in current JSATS transmitters can be identified, it could be possible to implant ASIC-based JSATS transmitters by injection rather than surgery. Using criteria for the size of fish suitable for surgical implantation of current JSATS transmitters, it was concluded that fish as small as 70 mm in length could be implanted with an ASIC-based transmitter, particularly if implantation by injection became feasible.

  2. 47 CFR 95.639 - Maximum transmitter power.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Maximum transmitter power. 95.639 Section 95.639 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES... (ERP). (e) The maximum transmitter output power authorized for LPRS stations is 100 mW. (f) In the Med...

  3. luminous transmittance and phase transition temperature of vo2:ce ...

    African Journals Online (AJOL)

    nb

    A two-step increase in transmittance observed in the cooling loop in pure VO2 was found to be suppressed by cerium inclusion. Keywords: vanadium dioxide, luminous transmittance, phase transition temperature. INTRODUCTION. Discovery of novel behavior of vanadium dioxide to undergo a metal-to-insulator phase.

  4. 47 CFR 25.281 - Automatic Transmitter Identification System (ATIS).

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 2 2010-10-01 2010-10-01 false Automatic Transmitter Identification System... Identification System (ATIS). All satellite uplink transmissions carrying broadband video information shall be identified through the use of an automatic transmitter identification system as specified below. (a...

  5. Observational measure of implementation progress in community based settings: The Stages of implementation completion (SIC

    Directory of Open Access Journals (Sweden)

    Brown C

    2011-10-01

    Full Text Available Abstract Background An increasingly large body of research is focused on designing and testing strategies to improve knowledge about how to embed evidence-based programs (EBP into community settings. Development of strategies for overcoming barriers and increasing the effectiveness and pace of implementation is a high priority. Yet, there are few research tools that measure the implementation process itself. The Stages of Implementation Completion (SIC is an observation-based measure that is used to track the time to achievement of key implementation milestones in an EBP being implemented in 51 counties in 53 sites (two counties have two sites in two states in the United States. Methods The SIC was developed in the context of a randomized trial comparing the effectiveness of two implementation strategies: community development teams (experimental condition and individualized implementation (control condition. Fifty-one counties were randomized to experimental or control conditions for implementation of multidimensional treatment foster care (MTFC, an alternative to group/residential care placement for children and adolescents. Progress through eight implementation stages was tracked by noting dates of completion of specific activities in each stage. Activities were tailored to the strategies for implementing the specific EBP. Results Preliminary data showed that several counties ceased progress during pre-implementation and that there was a high degree of variability among sites in the duration scores per stage and on the proportion of activities that were completed in each stage. Progress through activities and stages for three example counties is shown. Conclusions By assessing the attainment time of each stage and the proportion of activities completed, the SIC measure can be used to track and compare the effectiveness of various implementation strategies. Data from the SIC will provide sites with relevant information on the time and

  6. A new topology and control method for electromagnetic transmitter power supplies

    Science.gov (United States)

    Zhang, Yiming; Zhang, Jialin; Yuan, Dakang

    2017-04-01

    As essential equipment for electromagnetic exploration, electromagnetic transmitter reverse the steady power supply with desired frequency and transmit the power through grounding electrodes. To obtain effective geophysical data during deep exploration, the transmitter needs to be high-voltage, high-current, with high-accuracy output, and yet compact and light. The researches on the power supply technologies for high-voltage high-power electromagnetic transmitter is of significant importance to the deep geophysical explorations. Therefore, the performance of electromagnetic transmitter is mainly subject to the following two aspects: the performance of emission current and voltage, and the power density. These requirements bring technical difficulties to the development of power supplies. Conventionally, high-frequency switching power supplies are applied in the design of a high-power transmitter power supply. However, the structure of the topology is complicate, which may reduce the controllability of the output voltage and the reliability of the system. Without power factor control, the power factor of the structure is relatively low. Moreover high switching frequency causes high loss. With the development of the PWM (pulse width modulation) technique, its merits of simple structure, low loss, convenient control and unit power factor have made it popular in electrical energy feedback, active filter, and power factor compensation. Studies have shown that using PWM converters and space vector modulation have become the trend in designing transmitter power supply. However, the earth load exhibits different impedances at different frequencies. Thus ensuing high-accuracy and a stable output from a transmitter power supply in harsh environment has become a key topic in the design of geophysical exploration instruments. Based on SVPWM technology, an electromagnetic transmitter power supply has been designed and its control strategy has been studied. The transmitting

  7. 47 CFR 90.473 - Operation of internal transmitter control systems through licensed fixed control points.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Operation of internal transmitter control... Transmitter Control Internal Transmitter Control Systems § 90.473 Operation of internal transmitter control systems through licensed fixed control points. An internal transmitter control system may be operated...

  8. Light transmittance and polymerization kinetics of amorphous calcium phosphate composites.

    Science.gov (United States)

    Par, Matej; Marovic, Danijela; Skenderovic, Hrvoje; Gamulin, Ozren; Klaric, Eva; Tarle, Zrinka

    2017-05-01

    This study investigated light transmittance and polymerization kinetics of experimental remineralizing composite materials based on amorphous calcium phosphate (ACP), reinforced with inert fillers. Light-curable composites were composed of Bis-EMA-TEGDMA-HEMA resin and ACP, barium glass, and silica fillers. Additionally, a commercial composite Tetric EvoCeram was used as a reference. Light transmittance was recorded in real-time during curing, and transmittance curves were used to assess polymerization kinetics. To obtain additional information on polymerization kinetics, temperature rise was monitored in real-time during curing and degree of conversion was measured immediately and 24 h post-cure. Light transmittance values of 2-mm thick samples of uncured ACP composites (2.3-2.9 %) were significantly lower than those of the commercial composite (3.8 %). The ACP composites presented a considerable transmittance rise during curing, resulting in post-cure transmittance values similar to or higher than those of the commercial composite (5.5-7.9 vs. 5.4 %). The initial part of light transmittance curves of experimental composites showed a linear rise that lasted for 7-20 s. Linear fitting was performed to obtain a function whose slope was assessed as a measure of polymerization rate. Comparison of transmittance and temperature curves showed that the linear transmittance rise lasted throughout the most part of the pre-vitrification period. The linear rise of light transmittance during curing has not been reported in previous studies and may indicate a unique kinetic behavior, characterized by a long period of nearly constant polymerization rate. The observed kinetic behavior may result in slower development of polymerization shrinkage stress but also inferior mechanical properties.

  9. Thermochemistry and growth mechanism of SiC nanowires

    Science.gov (United States)

    Chen, Jianjun; Ding, Lijuan; Xin, Lipeng; Zeng, Fan; Chen, Jun

    2017-09-01

    The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 ≤ T ≤ 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth.

  10. Formation of SiC thin films by chemical vapor deposition with vinylsilane precursor

    Science.gov (United States)

    Doi, Takuma; Takeuchi, Wakana; Jin, Yong; Kokubun, Hiroshi; Yasuhara, Shigeo; Nakatsuka, Osamu; Zaima, Shigeaki

    2018-01-01

    We have examined the formation of SiC thin films by chemical vapor deposition (CVD) using vinylsilane and investigated the chemical bonding state and crystallinity of the prepared SiC thin films. We achieved the formation of a Si–H–less SiC film at growth temperatures as low as 600 °C. Also, we investigated the in situ doping effect of N by the incorporation of NH3 gas in the SiC growth and demonstrated that the chemical composition of N in SiC thin films was controlled by adjusting the NH3 flow rate. In addition, we examined the growth of SiC thin films on a Cu substrate and achieved the formation of a SiC thin film while avoiding any significant reaction between SiC and Cu at a growth temperature of 700 °C.

  11. An Experimental Study Of Aluminum Alloy Matrix Composite Reinforced SiC Made By Hot Pressing Method

    Directory of Open Access Journals (Sweden)

    Suśniak M.

    2015-06-01

    Full Text Available The present work investigates the possibility of using powder metallurgy processing for producing a metal matrix composite. Materials were prepared from AlSi5Cu2 chips with reinforcement of 10, 15, 20 wt. % silicon carbide. Aluminum alloy chips were milled with SiC powder in a high-energy ball mill by 40 hours. Mechanical alloying process lead to obtain an uniform distribution of hard SiC particles in the metallic matrix and refine the grain size. The consolidation of composite powders was performed by vacuum hot pressing at 450°C, under pressure of 600 MPa by 10 min. The results shows that the addition of SiC particles has a substantial influence on the microstructure and mechanical properties of composite powder as well as consolidated material. Hot pressing is an effective consolidation method which leads to obtain dense AlSi5Cu2/SiC composite with homogeneous structure and advanced mechanical properties.

  12. 2-Micron Laser Transmitter for Coherent CO2 DIAL Measurement

    Science.gov (United States)

    Singh, Upendra N.; Bai, Yingxin; Yu, Jirong

    2009-01-01

    Carbon dioxide (CO2) has been recognized as one of the most important greenhouse gases. It is essential for the study of global warming to accurately measure the CO2 concentration in the atmosphere and continuously record its variation. A high repetition rate, highly efficient, Q-switched 2-micron laser system as the transmitter of a coherent differential absorption lidar for CO2 measurement has been developed in NASA Langley Research Center. This laser system is capable of making a vertical profiling of CO2 from ground and column measurement of CO2 from air and space-borne platform. The transmitter is a master-slave laser system. The master laser operates in a single frequency, either on-line or off-line of a selected CO2 absorption line. The slave laser is a Q-switched ring-cavity Ho:YLF laser which is pumped by a Tm:fiber laser. The repetition rate can be adjusted from a few hundred Hz to 10 kHz. The injection seeding success rate is from 99.4% to 99.95%. For 1 kHz operation, the output pulse energy is 5.5mJ with the pulse length of 50 ns. The optical-to-optical efficiency is 39% when the pump power is 14.5W. A Ho:YLF laser operating in the range of 2.05 micrometers can be tuned over several characteristic lines of CO2 absorption. Experimentally, a diode pumped Ho:Tm:YLF laser has been successfully used as the transmitter of coherent differential absorption lidar for the measurement of CO2 with a repetition rate of 5 Hz and pulse energy of 75 mJ. For coherent detection, high repetition rate is required for speckle averaging to obtain highly precise measurements. However, a diode pumped Ho:Tm:YLF laser can not operate in high repetition rate due to the large heat loading and up-conversion. A Tm:fiber laser pumped Ho:YLF laser with low heat loading can operate in high repetition rate. A theoretical model has been established to simulate the performance of Tm:fiber laser pumped Ho:YLF lasers. For continuous wave (CW) operation, high pump intensity with small beam

  13. Status and Prospects of SiC Power Devices

    Science.gov (United States)

    Bakowski, Mietek

    Silicon Carbide (SiC) power devices offer significant benefits of improved efficiency, dynamic performance and reliability of electronic and electric systems. The challenges and prospects of SiC power device development are reviewed considering different device types. A close correlation between an exponential increase of current handling capability during the last ten years and improvement in substrate quality is demonstrated. The voltage range of silicon and SiC unipolar and bipolar power devices with respect to the on-state voltage is determined based on device simulations. 4H-SiC unipolar devices are potentially superior to all silicon devices up to 5kV design voltage and to all SiC bipolar devices up to 5-6kV design voltage for temperatures up to 150°C. The low end of SiC unipolar devices is determined to be around 200V design voltage provided substrate resistance is reduced by reducing the thickness of the substrate down to 100μm. The influence of reduced channel mobility on the specific on-resistance of 4H-SiC and 3C-SiC DMOSFETs is shown. It has been demonstrated that 3C-SiC DMOSFETs could be a better choice compared to 4H-SiC DMOSFETs in the voltage range below 1.2kV utilising better channel mobility and larger substrate size obtainable in the near future in 3C-SiC polytype. An impact of the super junction (SJ) concept on silicon and SiC MOSFET specific on-resistance limits is demonstrated.

  14. The oxidation behavior of SiC sintered with Al-B-C and improved oxidation resistance via heat treatments

    Energy Technology Data Exchange (ETDEWEB)

    Sixta, Mark [Univ. of California, Berkeley, CA (United States). Dept. of Materials Science and Mineral Engineering

    1997-12-01

    The oxidation behavior of high strength and high toughness SiC, sintered with Al, B, and C (ABC-SiC), was examined. Kinetic data were acquired and the parabolic rate constant for oxidation was determined and compared with literature data on various SiC materials. The role of secondary phases on the oxide morphology was explored. ABC-SiC was compared to commercially available SiC, Hexoloy, and SiC sintered with 10% yttrium aluminum garnet (YAG). Two-step sintering (pre-coarsening) was employed with holds for 48 hours at 600-1,600°C, prior to the typical hot-pressing conditions of 1,900°C for 1 hour, to change the chemistry and reduce the number of bubbles in the silica scale. The effects on the oxide thickness and integrity was examined as a function of the precoarsening heat treatment temperature. Additionally, the hot-pressed ABC-SiC was subjected to heat treatments (anneals) at 1,800°C for 1 hour in nitrogen, Ar, and vacuum environments, and the effects on subsequent oxidation were evaluated. The Ar and vacuum heat treatments dramatically improved the oxidation resistance of ABC-SiC. Finally, reoxidation experiments were performed to try to alter the surface chemistry of the SiC to improve the oxidation resistance. The four-point bend strengths and two-parameter Weibull plots of the most successful heat treatments were compared with the standard ABC-SiC to ensure that significant degradation did not result from altering the processing of the material.

  15. MICROSTRUCTURAL ANALYSIS OF HOT ISOSTATICALLY PRESSED AL-SIC

    OpenAIRE

    Bronsveld, P.M.; Hosson, J.Th. De; Sargent, M.A.; Alsem, W.H.M.

    1991-01-01

    The difference between extruded and hot isostatically pressed (HIP) Al6061 both with a T6 final heat treatment and with a 30 wt.% SiC particulate reinforcement is one of densification. The higher density of the HIP material is not translated into a stronger material. The Mg2Si precipitation is favoured by the presence of the SiC reinforcement in both samples. HIP powder metallurgy material reveals clearly the original powder particle boundaries, in contrast to the more smeared-out stringers i...

  16. Supernova Reverse Shocks and SiC Growth

    OpenAIRE

    Deneault, E. A. -N.; Clayton, D. D.; Heger, A.

    2003-01-01

    We present new mechanisms by which the isotopic compositions of X-type grains of presolar SiC are altered by reverse shocks in Type II supernovae. We address three epochs of reverse shocks: pressure wave from the H envelope near t = 10$^6$s; reverse shock from the presupernova wind near 10$^8-10^9$s; reverse shock from the ISM near 10$^{10}$s. Using 1-D hydrodynamics we show that the first creates a dense shell of Si and C atoms near 10$^6$s in which the SiC surely condenses. The second rever...

  17. Emergency Locator Transmitter Survivability and Reliability Study

    Science.gov (United States)

    Stimson, Chad M.; Littell, Justin D.; Mazzuca, Lisa M.; Foster, Anthony W.; Theodorakos, George J.

    2017-01-01

    A comprehensive study of Emergency Locator Transmitter (ELT) performance was conducted over a three year period concluding in 2016 in support of the Search and Rescue (SAR) Mission Office at National Aeronautics and Space Administration (NASA) Goddard Space Flight Center (GSFC). The study began with a review of reported performance cited in a collection of works published as early as 1980 as well as analysis of a focused set of contemporary aviation crash reports. Based on initial research findings, a series of subscale and fullscale system tests were performed at NASA Langley Research Center (LaRC) with the goals of investigating ELT system failure modes and developing recommended improvements to the Radio Technical Commission for Aeronautics (RTCA) Minimum Operational Performance Specification (MOPS) that will result in improved system performance. Enhanced performance of ELT systems in aviation accidents will reduce unnecessary loss of human life and make SAR operations safer and less costly by reducing the amount of time required to locate accident sites.

  18. MST radar transmitter control and monitor system

    Science.gov (United States)

    Brosnahan, J. W.

    1983-01-01

    A generalized transmitter control and monitor card was developed using the Intel 8031 (8051 family) microprocessor. The design was generalized so that this card can be utilized for virtually any control application with only firmware changes. The block diagram appears in Figure 2. The card provides for local control using a 16 key keypad (up to 64 keys are supported). The local display is four digits of 7 segment LEDs. The display can indicate the status of all major system parameters and provide voltage readout for the analog signal inputs. The card can be populated with only the chips required for a given application. Fully populated, the card has two RS-232 serial ports for computer communications. It has a total of 48 TTL parallel lines that can define as either inputs or outputs in groups of four. A total of 32 analog inputs with a 0-5 volt range are supported. In addition, a real-time clock/calendar is available if required. A total of 16 k bytes of ROM and 16 k bytes of RAM is available for programming. This card can be the basis of virtually any monitor or control system with appropriate software.

  19. Reaction-bonded Si3N4 and SiC matrix composites

    Science.gov (United States)

    Bhatt, Ramakrishna T.; Behrendt, Donald R.

    1992-01-01

    A development status evaluation is presented for the reaction-bonded SiC- and Si3N4-matrix types of fiber-reinforced ceramic-matrix composite (FRCMC). A variety of reaction-bonding methods are being pursued for FRCMC fabrication: CVI, CVD, directed metal oxidation, and self-propagating high-temperature synthesis. Due to their high specific modulus and strength, toughness, and fabricability, reaction-bonded FRCMC are important candidate materials for such heat-engine components as combustor liners, nozzles, and turbine and stator blading. The improvement of long-term oxidative stability in these composites is a major goal of current research.

  20. Influence of microstructure on hydrothermal corrosion of chemically vapor processed SiC composite tubes

    Science.gov (United States)

    Kim, Daejong; Lee, Ho Jung; Jang, Changheui; Lee, Hyeon-Geun; Park, Ji Yeon; Kim, Weon-Ju

    2017-08-01

    Multi-layered SiC composites consisting of monolithic SiC and a SiCf/SiC composite are one of the accident tolerant fuel cladding concepts in pressurized light water reactors. To evaluate the integrity of the SiC fuel cladding under normal operating conditions of a pressurized light water reactor, the hydrothermal corrosion behavior of multi-layered SiC composite tubes was investigated in the simulated primary water environment of a pressurized water reactor without neutron fluence. The results showed that SiC phases with good crystallinity such as Tyranno SA3 SiC fiber and monolithic SiC deposited at 1200 °C had good corrosion resistance. However, the SiC phase deposited at 1000 °C had less crystallinity and severely dissolved in water, particularly the amorphous SiC phase formed along grain boundaries. Dissolved hydrogen did not play a significant role in improving the hydrothermal corrosion resistance of the CVI-processed SiC phases containing amorphous SiC, resulting in a significant weight loss and reduction of hoop strength of the multi-layered SiC composite tubes after corrosion.

  1. Effect of Y2O3 addition on the properties of mullite bonded porous SiC ceramics prepared by an infiltration technique

    Directory of Open Access Journals (Sweden)

    Kayal, N.

    2013-10-01

    Full Text Available Mullite bonded porous SiC ceramics were synthesized by infiltrating a powder compact of SiC and Y2O3 with a liquid precursor of mullite which on subsequent heat treatment at 1300-1500 ºC produced mullite bonded porous SiC ceramics. The effect of Y2O3 content and sintering temperature on phase composition, microstructure, oxidation degree of SiC, flexural strength, porosity and pore size distribution were studied. Due to enhance oxidation and well developed neck formation by the addition of Y2O3 a high strength 49 MPa was achieved for the porous mullite bonded SiC ceramics with porosity 28 vol %.Se han sintetizado materiales porosos de SiC-Mullita mediante la infiltración de polvo prensado de SiC y Y2O3 con un precursor líquido de mullita, el cual con un tratamiento térmico posterior a 1300-1500 °C da lugar a los materiales porosos de SiC-Mullita. Se estudió el efecto del contenido de Y2O3 y la temperatura de sinterización en la constitución mineralógica, en la microestructura, en el grado de oxidación del SiC, la resistencia a la flexión, la porosidad total y su distribución de tamaño. Debido a la oxidación y a la mejora en la formación de los cuellos por la adición de Y2O3, se alcanzan altos valores de resistencia, 49 MPa, para estos materiales porosos de SiC-Mullita con porosidad 28 % en volumen.

  2. New criteria for sepsis-induced coagulopathy (SIC) following the revised sepsis definition: a retrospective analysis of a nationwide survey.

    Science.gov (United States)

    Iba, Toshiaki; Nisio, Marcello Di; Levy, Jerrold H; Kitamura, Naoya; Thachil, Jecko

    2017-09-27

    Recent clinical studies have shown that anticoagulant therapy might be effective only in specific at-risk subgroups of patients with sepsis and coagulation dysfunction. The definition of sepsis was recently modified, and as such, old scoring systems may no longer be appropriate for the diagnosis of sepsis-associated coagulopathy. The aim of this study was to evaluate prognostic factors in patients diagnosed with sepsis and coagulopathy according to the new sepsis definition and assess their accuracy in comparison with existing models. Retrospective analysis of the nationwide survey for recombinant human soluble thrombomodulin. General emergency and critical care centres in secondary and tertiary care hospitals. We evaluated the prognostic value of the newly proposed diagnostic criteria for sepsis-induced coagulopathy (SIC). A total of 1498 Japanese patients with sepsis and coagulopathy complications who were treated with recombinant thrombomodulin were analysed in this study. The platelet count, prothrombin time (PT) ratio, fibrinogen/fibrin degradation products, systemic inflammatory response syndrome score and Sequential Organ Failure Assessment (SOFA) score obtained just before the start of treatment were examined in relation to the 28-day mortality rate. The platelet count, PT ratio and total SOFA were independent predictors of a fatal outcome in a logistic regression model. A SIC score was defined using the three above-mentioned variables with a positivity threshold of 4 points or more. The SIC score predicted higher 28-day mortality rate compared with the current Japanese Association for Acute Medicine-disseminated intravascular coagulation score (38.4%vs34.7%). The SIC score is based on readily available parameters, is easy to calculate and has a high predictive value for 28-day mortality. Future studies are warranted to evaluate whether the SIC score may guide the decision to initiate anticoagulant therapy. © Article author(s) (or their employer(s) unless

  3. Optical Tunable-Based Transmitter for Multiple Radio Frequency Bands

    Science.gov (United States)

    Nguyen, Hung (Inventor); Simons, Rainee N. (Inventor); Wintucky, Edwin G. (Inventor); Freeman, Jon C. (Inventor)

    2016-01-01

    An optical tunable transmitter is used to transmit multiple radio frequency bands on a single beam. More specifically, a tunable laser is configured to generate a plurality of optical wavelengths, and an optical tunable transmitter is configured to modulate each of the plurality of optical wavelengths with a corresponding radio frequency band. The optical tunable transmitter is also configured to encode each of the plurality of modulated optical wavelengths onto a single laser beam for transmission of a plurality of radio frequency bands using the single laser beam.

  4. An Embedded Web based Real Time Application for Remote Monitoring & Controlling of MST RADAR Transmitters

    Directory of Open Access Journals (Sweden)

    Nagabhushan Raju KONDURU

    2012-01-01

    Full Text Available An embedded web based radar transmitters control & interlock system is developed in the present work. This research activity facilitates controlling and monitoring 53-MHz, 2.5 Mega-watt peak power MST radar triode based transmitters via internet. This radar is a prime instrument for atmospheric science research with 32 transmitters powering 1024-element antenna array. A comprehensive safety interlock is built in to protect expensive devices; by sensing anode voltages, heater currents and airflow etc. It automatically prevents fatal damages by switching transmitter / RF off. The system is designed and developed using RISC microcontroller ARM LPC 2148 based on a 32- bit ARM7 TDMI-S CPU with real-time emulation and embedded trace support and 512 kB high speed flash memory. The microcontroller is a blend of serial communication interface, dual 10-bit ADC’s and fast GPIO. Ethernet controller LM3S6432 is used to send sensors’ digitalized data over internet.

  5. Experimental Characterization of Near-Infrared Laser Energy Absorption, Scattering, and Transmittance in Biological Tissue

    National Research Council Canada - National Science Library

    Laffitte, John; Roelant, David; Denton, Michael L; Thomas, Robert J

    2007-01-01

    .... Tissue samples varied in thickness from millimeters to microns. Readings from three IR detectors were used to calculate the diffuse reflectance, diffuse transmittance, and collimated transmittance...

  6. Stress Analysis of SiC MEMS Using Raman Spectroscopy

    Science.gov (United States)

    Ness, Stanley J.; Marciniak, M. A.; Lott, J. A.; Starman, L. A.; Busbee, J. D.; Melzak, J. M.

    2003-03-01

    During the fabrication of Micro-Electro-Mechanical Systems (MEMS), residual stress is often induced in the thin films that are deposited to create these systems. These stresses can cause the device to fail due to buckling, curling, or fracture. Industry is looking for ways to characterize the stress during the deposition of thin films in order to reduce or eliminate device failure. Micro-Raman spectroscopy has been successfully used to characterize poly-Si MEMS devices made with the MUMPS® process. Raman spectroscopy was selected because it is nondestructive, fast and has the potential for in situ stress monitoring. This research attempts to use Raman spectroscopy to analyze the stress in SiC MEMS made with the MUSiC® process. Raman spectroscopy is performed on 1-2-micron-thick SiC thin films deposited on silicon, silicon nitride, and silicon oxide substrates. The most common poly-type of SiC found in thin film MEMS made with the MUSiC® process is 3C-SiC. Research also includes baseline spectra of 6H, 4H, and 15R poly-types of bulk SiC.

  7. Passivation of SiC device surfaces by aluminum oxide

    Science.gov (United States)

    Hallén, A.; Usman, M.; Suvanam, S.; Henkel, C.; Martin, D.; Linnarsson, M. K.

    2014-03-01

    A steady improvement in material quality and process technology has made electronic silicon carbide devices commercially available. Both rectifying and switched devices can today be purchased from several vendors. This successful SiC development over the last 25 years can also be utilized for other types of devices, such as light emitting and photovoltaic devices, however, there are still critical problems related to material properties and reliability that need to be addressed. This contribution will focus on surface passivation of SiC devices. This issue is of utmost importance for further development of SiC MOSFETs, which so far has been limited by reliability and low charge carrier surface mobilities. Also bipolar devices, such as BJTs, LEDs, or PV devices will benefit from more efficient and reliable surface passivation techniques in order to maintain long charge carrier lifetimes. Silicon carbide material enables the devices to operate at higher electric fields, higher temperatures and in more radiation dense applications than silicon devices. To be able to utilize the full potential of the SiC material, it is therefore necessary to develop passivation layers that can sustain these more demanding operation conditions. In this presentation it will also be shown that passivation layers of Al2O3 deposited by atomic layer deposition have shown superior radiation hardness properties compared to traditional SiO2-based passivation layers.

  8. MICROSTRUCTURAL ANALYSIS OF HOT ISOSTATICALLY PRESSED AL-SIC

    NARCIS (Netherlands)

    Bronsveld, P.M.; Hosson, J.Th. De; Sargent, M.A.; Alsem, W.H.M.

    1991-01-01

    The difference between extruded and hot isostatically pressed (HIP) Al6061 both with a T6 final heat treatment and with a 30 wt.% SiC particulate reinforcement is one of densification. The higher density of the HIP material is not translated into a stronger material. The Mg2Si precipitation is

  9. Conducted EMI in Inverters with SiC Transistors

    NARCIS (Netherlands)

    Gong, X.

    2013-01-01

    Conducted EMI in Inverters with SiC Transistors Electromagnetic Interference (EMI) is the main side effect accompanied with the fast voltage and current switching transients in power electronics applications. Compliance of the Electromagnetic Compatibility (EMC) standard is prescribed for any power

  10. Nucleation and growth of polycrystalline SiC

    DEFF Research Database (Denmark)

    Kaiser, M.; Schimmel, S.; Jokubavicius, V.

    2014-01-01

    The nucleation and bulk growth of polycrystalline SiC in a 2 inch PVT setup using isostatic and pyrolytic graphite as substrates was studied. Textured nucleation occurs under near-thermal equilibrium conditions at the initial growth stage with hexagonal platelet shaped crystallites of 4H, 6H and ...

  11. Crystal growth and characterization of fluorescent SiC

    DEFF Research Database (Denmark)

    Wellmann, P.; Kaiser, M.; Hupfer, T.

    Silicon carbide (SiC) is widely used as substrate for nitride based light emitting diodes (LEDs). For today’s white LEDs mainly a sandwich structure of a blue or ultra violet LED and a yellowish phosphorus is used. In the frame of European project we study a concept to implement the functionality...

  12. Performance of bulk SiC radiation detectors

    CERN Document Server

    Cunningham, W; Lamb, G; Scott, J; Mathieson, K; Roy, P; Bates, R; Thornton, P; Smith, K M; Cusco, R; Glaser, M; Rahman, M

    2002-01-01

    SiC is a wide-gap material with excellent electrical and physical properties that may make it an important material for some future electronic devices. The most important possible applications of SiC are in hostile environments, such as in car/jet engines, within nuclear reactors, or in outer space. Another area where the material properties, most notably radiation hardness, would be valuable is in the inner tracking detectors of particle physics experiments. Here, we describe the performance of SiC diodes irradiated in the 24 GeV proton beam at CERN. Schottky measurements have been used to probe the irradiated material for changes in I-V characteristics. Other methods, borrowed from III-V research, used to study the irradiated surface include atomic force microscope scans and Raman spectroscopy. These have been used to observe the damage to the materials surface and internal lattice structure. We have also characterised the detection capabilities of bulk semi-insulating SiC for alpha radiation. By measuring ...

  13. Porous Alumina Ceramics Modified with SiC Nanopowder

    OpenAIRE

    Zaķe-Tiļuga, I; Švinka, R; Švinka, V

    2011-01-01

    The aim of this study was to clarify how addition of plasma synthesized SiC nanopowder (up to 5 wt%) affect some properties (e.g., shrinkage, bending strength and thermal shock resistance) of porous alumina ceramics produced by slip casting method.

  14. Low Temperature Photoluminescence of 6H fluorescent SiC

    DEFF Research Database (Denmark)

    Wei, Yi; Künecke, Ulrike; Jokubavicius, Valdas

    We have presented the low temperature photoluminescence (PL) measurements of three 6H fluorescent Silicon Carbide (f-SiC) samples. The epilayers of the f-SiC samples were nitrogenboron co-doped and grown by fast sublimation growth process (FSGP) method on the bulk 6H SiC substrates. The doping...

  15. Enhanced visible light photocatalytic H{sub 2} evolution of metal-free g-C{sub 3}N{sub 4}/SiC heterostructured photocatalysts

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Biao, E-mail: wangbiao@fjirsm.ac.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); University of the Chinese Academy of Sciences, Beijing 100049 (China); Zhang, Jingtao, E-mail: zhangjtao@mail.sysu.edu.cn [State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China); Huang, Feng, E-mail: huangfeng@mail.sysu.edu.cn [Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-sen University, Guangzhou 510006 (China)

    2017-01-01

    Highlights: • Novel g-C{sub 3}N{sub 4}/SiC composite was prepared by synthesizing g-C{sub 3}N{sub 4} on the surface of SiC. • g-C{sub 3}N{sub 4}/SiC composites exhibit much higher H{sub 2} production activity than pure g-C{sub 3}N{sub 4}. • The g-C{sub 3}N{sub 4}/SiC heterojunction mainly accounts for improved photocatalytic activity. - Abstract: g-C{sub 3}N{sub 4} has been attracting much attention for application in visible light photocatalytic water splitting due to its suitable band structure, and high thermal and chemical stability. However, the rapid recombination of photogenerated carriers has inhibited its wide use. For this reason, novel g-C{sub 3}N{sub 4}/SiC composites were prepared via in situ synthesis of g-C{sub 3}N{sub 4} on the surface of SiC, with which g-C{sub 3}N{sub 4} shows tight interaction (chemical bonding). The g-C{sub 3}N{sub 4}/SiC composites exhibit high stability in H{sub 2} production under irradiation with visible light (λ ≥ 420 nm), demonstrating a maximum of 182 μmol g{sup −1} h{sup −1}, being 3.4 times higher than that of pure g-C{sub 3}N{sub 4}. The enhanced photocatalytic H{sub 2} production ability for g-C{sub 3}N{sub 4}/SiC photocatalysts is primarily ascribed to the combined effects of enhanced separation of photogenerated carriers through efficient migration of electron and enlarged surface areas, in addition to the possible contributions of increased hydrophilicity of SiC and polymerization degree of g-C{sub 3}N{sub 4}. This study may provide new insights into the development of g-C{sub 3}N{sub 4}-based composites as stable and efficient photocatalysts for H{sub 2} production from water splitting.

  16. 47 CFR 95.628 - MedRadio transmitters.

    Science.gov (United States)

    2010-10-01

    ... measured on a test site equivalent to free space such as a fully anechoic test chamber. Compliance with the... anechoic test chamber. Compliance with the maximum transmitter power requirements set forth in § 95.639(f...

  17. Surgical insertions of transmitters and telemetry methods in fisheries research

    Science.gov (United States)

    Wargo Rub, A. Michelle; Jepsen, Niels; Liedtke, Theresa L.; Moser, L; Weber III, E. P. Scott

    2015-01-01

    Use of electronic transmitter and monitoring systems to track movements of aquatic animals has increased continuously since the inception of these systems in the mid-1950s. The purpose of the present report is to provide information about veterinary principles and their incorporation into surgical implantation procedures for fish. We also intend to provide insight into the unique challenges of field-based aquatic surgical studies. Within this context, 4 aspects of the process for surgical implantation of transmitters in fish (ie, handling, aseptic technique, anesthesia, and implantation) will be described. Effects of surgical insertion of transmitters (ie, tagging) and aspects of the surgical implantation process where collaboration and professional exchanges among nonveterinarian researchers and veterinarians may be most fruitful will be discussed. Although this report focuses on surgical implantation, the principles and protocols described here (other than incision and suture placement) are also applicable to studies that involve injection of transmitters into fish.

  18. Determining Light Transmittance Characteristics of Wood and Bark Chips

    Science.gov (United States)

    Douglas B. Brumm; Robert C. Radcliffe; John A. Sturos

    1983-01-01

    Describes compter-assisted testing for measuring light transmittance of wood and bark chips. Electronic interface permitted the computer to collect physical data accurately and efficiently and to analyze and present the data in several tabular and grapical formats

  19. Streaming Transmitter over Block-Fading Channels with Delay Constraint

    CERN Document Server

    Cocco, Giuseppe; Ibars, Christian

    2012-01-01

    Data streaming transmission, in which the data arrives at the transmitter gradually over time is studied. It is assumed that the transmitter receives a new message at each channel block at a constant rate which is fixed by an underlying application, and tries to broadcast these messages to users within a certain deadline. The channels are assumed to be block fading and independent over blocks and users. The performance measure is the average total rate of received information at the users within the transmission deadline. Three different encoding schemes are proposed and compared with an informed transmitter upper bound in terms of the average total rate for a set of users with varying channel qualities. Analytical upper bounds on the average total rate are derived for all the proposed schemes. It is shown that no single transmission strategy dominates the others at all channel settings, and the best transmitter streaming scheme depends on the distribution of the average channel conditions over the users.

  20. Efficient and Compact Semiconductor Laser Transmitter Modules Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Continue development of a Compact Transmitter Module (CTM). Modules will be voltage controlled to adjust wavlength using temperature and drive current settings. The...

  1. Sequential control of step-bunching during graphene growth on SiC (0001)

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Jianfeng; Kusunoki, Michiko [Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603 (Japan); Yasui, Osamu; Norimatsu, Wataru, E-mail: w-norimatsu@imass.nagoya-u.ac.jp; Matsuda, Keita [Department of Applied Chemistry, Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan)

    2016-08-22

    We have investigated the relation between the step-bunching and graphene growth phenomena on an SiC substrate. We found that only a minimum amount of step-bunching occurred during the graphene growth process with a high heating rate. On the other hand, a large amount of step-bunching occurred using a slow heating process. These results indicated that we can control the degree of step-bunching during graphene growth by controlling the heating rate. We also found that graphene coverage suppressed step bunching, which is an effective methodology not only in the graphene technology but also in the SiC-based power electronics.

  2. Operation and Modulation of H7 Current Source Inverter with Hybrid SiC and Si Semiconductor Switches

    DEFF Research Database (Denmark)

    Wang, Weiqi; Gao, Feng; Yang, Yongheng

    2017-01-01

    This paper proposes an H7 current source inverter (CSI) consisting of a single parallel-connected silicon carbide (SiC) switch and a traditional silicon (Si) H6 CSI. The proposed H7 CSI takes the advantages of the SiC switch to maintain high efficiency, while significantly increasing the switching...... frequency. In order to reduce the switching times and also realize the zero current switching (ZCS) ability for the rear-end CSI, two modulation schemes are proposed for the H7 CSI with either superior output performance or minimal switching counts. Consequently, the proposed H7 CSI can be considered...... as an all-SiC-switch converter in terms of high performance and high efficiency with reduced DC inductance. It provides a cost-effective solution to addressing the efficiency issue of conventional CSI systems. Simulations and experiments are performed to validate the effectiveness of the proposed H7 CSI...

  3. Structure/function implications in a dynamic complex of the intrinsically disordered Sic1 with the Cdc4 subunit of an SCF ubiquitin ligase

    Science.gov (United States)

    Mittag, Tanja; Marsh, Joseph; Grishaev, Alexander; Orlicky, Stephen; Lin, Hong; Sicheri, Frank; Tyers, Mike; Forman-Kay, Julie D.

    2010-01-01

    Summary Intrinsically disordered proteins can form highly dynamic complexes with partner proteins. One such dynamic complex involves the intrinsically disordered Sic1 with its partner Cdc4 in regulation of yeast cell cycle progression. Phosphorylation of six N-terminal Sic1 sites leads to equilibrium engagement of each phosphorylation site with the primary binding pocket in Cdc4, the substrate recognition subunit of a ubiquitin ligase. ENSEMBLE calculations utilizing experimental NMR and small-angle x-ray scattering data reveal significant transient structure in both phosphorylation states of the isolated ensembles (Sic1 and pSic1) that modulates their electrostatic potential, suggesting a structural basis for the proposed strong contribution of electrostatics to binding. A structural model of the dynamic pSic1-Cdc4 complex demonstrates the spatial arrangements in the ubiquitin ligase complex. These results provide a physical picture of a protein that is predominantly disordered in both its free and bound states, enabling aspects of its structure/function relationship to be elucidated. PMID:20399186

  4. Comeback of epitaxial graphene for electronics: large-area growth of bilayer-free graphene on SiC

    Science.gov (United States)

    Kruskopf, Mattias; Momeni Pakdehi, Davood; Pierz, Klaus; Wundrack, Stefan; Stosch, Rainer; Dziomba, Thorsten; Götz, Martin; Baringhaus, Jens; Aprojanz, Johannes; Tegenkamp, Christoph; Lidzba, Jakob; Seyller, Thomas; Hohls, Frank; Ahlers, Franz J.; Schumacher, Hans W.

    2016-12-01

    We present a new fabrication method for epitaxial graphene on SiC which enables the growth of ultra-smooth defect- and bilayer-free graphene sheets with an unprecedented reproducibility, a necessary prerequisite for wafer-scale fabrication of high quality graphene-based electronic devices. The inherent but unfavorable formation of high SiC surface terrace steps during high temperature sublimation growth is suppressed by rapid formation of the graphene buffer layer which stabilizes the SiC surface. The enhanced nucleation is enforced by decomposition of deposited polymer adsorbate which acts as a carbon source. Unique to this method are the conservation of mainly 0.25 and 0.5 nm high surface steps and the formation of bilayer-free graphene on an area only limited by the size of the sample. This makes the polymer-assisted sublimation growth technique a promising method for commercial wafer scale epitaxial graphene fabrication. The extraordinary electronic quality is evidenced by quantum resistance metrology at 4.2 K showing ultra-high precision and high electron mobility on mm scale devices comparable to state-of-the-art graphene.

  5. Transmitter Architectures Based on Near-Field Direct Antenna Modulation

    OpenAIRE

    Babakhani, Aydin; Rutledge, David B.; Hajimiri, Ali

    2008-01-01

    A near-field direct antenna modulation (NFDAM) technique is introduced, where the radiated far-field signal is modulated by time-varying changes in the antenna near-field electromagnetic (EM) boundary conditions. This enables the transmitter to send data in a direction-dependent fashion producing a secure communication link. Near-field direct antenna modulation (NFDAM) can be performed by using either switches or varactors. Two fully-integrated proof-of-concept NFDAM transmitters operating at...

  6. An Ultra-Low Power Edge Combining BPSK Transmitter

    Science.gov (United States)

    2013-09-01

    TECHNICAL DOCUMENT 3271 September 2013 An Ultra-Low Power Edge Combining BPSK Transmitter A. Ryu J. Rowland S. Naik...Ultra-Low Power Edge Combining BPSK Transmitter Albert Ryu #1, Jason Rowland #2, Suketu Naik #3 #1, #2 55250, Advanced Integrated Circuit Technology...locked to a ring oscillator (RO), and then multiple phase outputs are combined at the last edge combining/power amplifier (EC/PA) stage. With the

  7. Theoretical characterization of the SiC3H- anion.

    Science.gov (United States)

    Inostroza, N; Senent, M L

    2010-11-14

    Highly correlated ab initio methods are used to predict the equilibrium structures and spectroscopic parameters of the SiC(3)H(-) anion. The total energies and physical properties are reported using CASSCF/MRCI, RCCSD(T), and RCCSD(T)-F12 approaches and extended basis sets. The search of stable geometries leads to a total of 12 isomers (4 linear and 8 cyclic), for which electronic ground states have close-shell configurations. The stability of the linear form, l-SiC(3)H(-), is prominent. For the most stable linear isomer, the B(e) equilibrium rotational constant has been calculated with RCCSD(T) and a complete basis set. Core-correlation and vibrational effects have been taken into account to predict a B(0) of 2621.68 MHz for l-SiC(3)H(-) and 2460.48 MHz for l-SiC(3)D(-). The dipole moment of l-SiC(3)H(-) was found to be 2.9707 D with CASSCF/aug-cc-pV5Z and the electron affinity to be 2.7 eV with RCCSD(T)-F12A/aug-cc-pVTZ. Anharmonic spectroscopic parameters are derived from a quadratic, cubic, and quartic RCCSD(T)-F12A force field and second order perturbation theory. CASSCF/MRCI vertical excitations supply three metastable electronic states, (1)Σ(+) (3)Σ(+) and (3)Δ. Electron affinities calculated for a series of chains type SiC(n)H and SiC(n) (n=1-5) allow us to discuss the anion formation probabilities.

  8. In situ growth of SiC nanowires on RS-SiC substrate(s)

    Science.gov (United States)

    Yang, Wen; Araki, Hiroshi; Hu, Quanli; Ishikawa, Nobuhiro; Suzuki, Hiroshi; Noda, Tetsuji

    2004-03-01

    SiC nanowires over 10 μm in length and 20-100 nm in diameter have been synthesized by a novel in situ chemical vapor growth process on RS-SiC plates. The SiC nanowires were identified as single crystal β-SiC with Si-C chemistry. The growth direction of the nanowires is . The growth mechanism is discussed and a kinetic vapor-solid growth mechanism is proposed. The process demonstrates the possibility to fabricate SiC nanowires in ceramic matrix composites, such as continuous SiC fibers reinforced SiC matrix composites, with the SiC nanowires uniformly dispersed in the matrix.

  9. Synthesis of whiskers of SiC microwave assisted; Sintesis de whiskers de SiC asistida por microondas

    Energy Technology Data Exchange (ETDEWEB)

    Garza-Mendez, F. J.; Vanegas, A. J.; Vazquez, B. A.; Garza-Paz, J.

    2013-06-01

    We developed a new process for the synthesis of SiC whiskers assisted by microwaves; this is based on the mixture of silica xerogels and graphite powder. As energy source were used microwaves of 2.45 GHz and 1.0 kW of power RMS. On the other hand, mesoporous silica was synthesized via sol-gel, the precursors used were TEOS/H{sub 2}O and ethanol. Through analysis of the BET is determined the value of average pore size (3.0 nm) and the surface area (1090 m2/g).By mean of X-Ray diffraction it was demonstrated that the silica obtained is an amorphous solid and, the powders obtained in the microwave synthesis are {beta}-SiC. Synthesized SiC powders were observed using a SEM in secondary electron mode, it was observed that this powders consists of SiC whiskers. The effect of microwaves on the synthesis of whiskers of SiC is discussed in the present work. (Author) 19 refs.

  10. Design Parameters of a Miniaturized Piezoelectric Underwater Acoustic Transmitter

    Energy Technology Data Exchange (ETDEWEB)

    Li, Huidong; Deng, Zhiqun; Yuan, Yong; Carlson, Thomas J.

    2012-07-02

    The Juvenile Salmon Acoustic Telemetry System (JSATS) project supported by the U.S. Army Corps of Engineers, Portland District, has yielded the smallest acoustic fish tag transmitter commercially available to date. In order to study even smaller fish populations and make the transmitter injectable by needles, the JSATS acoustic micro transmitter needs to be further downsized. As part of the transmitter downsizing effort some of the design parameters of the lead zirconate titanate (PZT) ceramic tube transducer in the transmitter were studied, including the type of PZT, the backing material, the necessary drive voltage, the transmitting bandwidth and the length of the transducer. It was found that, to satisfy the 156-dB source level requirement of JSATS, a square wave with a 10-volt amplitude is required to drive 'soft' PZT transducers. PZT-5H demonstrated the best source level performance. For Navy types I and II, 16 volts or 18 volts were needed. Ethylene-propylene-diene monomer (EPDM) closed-cell foam was found to be the backing material providing the highest source level. The effect of tube length on the source level is also demonstrated in this paper, providing quantitative information for downsizing of small piezoelectric transmitters.

  11. Effects of radio transmitters on migrating wood thrushes

    Science.gov (United States)

    Powell, L.A.; Krementz, D.G.; Lang, J.D.; Conroy, M.J.

    1998-01-01

    We quantified the effects of radio transmitters on Wood Thrushes (Hylocichla mustelina) using 4 yr of banding and telemetry data from Piedmont National Wildlife Refuge, Georgia. Flight performance models suggest that the 1.6-g transmitter shortens the migratory range of Wood Thrushes by only 60 km, and the estimated migratory range is adequate to accomplish migration even with limited fat stores. We used two strengths of line, 5- and 9-kg test-strength braided Dacron, to attach the transmitters using the thigh-harness method. We recaptured 13 returning radio-marked Wood Thrushes, seven of which were still marked. Six of the seven birds marked with the 5-kg test harnesses lost their transmitters within 1 yr while all six of the 9-kg test harnesses were still attached up to 21 mo later. Radio-marking did not reduce the return rates of adults and immatures, and the transmitters did not cause radio-marked birds to lose more mass than banded-only birds. Wood Thrushes can successfully carry a transmitter during migration with no detectable negative effects. We recommend continued use of the thigh-harness method, but we encourage the use of 5-kg cotton line.

  12. Ultra-reducing conditions in average mantle peridotites and in podiform chromitites: a thermodynamic model for moissanite (SiC) formation

    Science.gov (United States)

    Golubkova, Anastasia; Schmidt, Max W.; Connolly, James A. D.

    2016-05-01

    Natural moissanite (SiC) is reported from mantle-derived samples ranging from lithospheric mantle keel diamonds to serpentinites to podiform chromitites in ophiolites related to suprasubduction zone settings (Luobusa, Dongqiao, Semail, and Ray-Iz). To simulate ultra-reducing conditions and the formation of moissanite, we compiled thermodynamic data for alloys (Fe-Si-C and Fe-Cr), carbides (Fe3C, Fe7C3, SiC), and Fe-silicides; these data were augmented by commonly used thermodynamic data for silicates and oxides. Computed phase diagram sections then constrain the P- T- fO2 conditions of SiC stability in the upper mantle. Our results demonstrate that: Moissanite only occurs at oxygen fugacities 6.5-7.5 log units below the iron-wustite buffer; moissanite and chromite cannot stably coexist; increasing pressure does not lead to the stability of this mineral pair; and silicates that coexist with moissanite have X Mg > 0.99. At upper mantle conditions, chromite reduces to Fe-Cr alloy at fO2 values 3.7-5.3 log units above the moissanite-olivine-(ortho)pyroxene-carbon (graphite or diamond) buffer (MOOC). The occurrence of SiC in chromitites and the absence of domains with almost Fe-free silicates suggest that ultra-reducing conditions allowing for SiC are confined to grain scale microenvironments. In contrast to previous ultra-high-pressure and/or temperature hypotheses for SiC origin, we postulate a low to moderate temperature mechanism, which operates via ultra-reducing fluids. In this model, graphite-/diamond-saturated moderately reducing fluids evolve in chemical isolation from the bulk rock to ultra-reducing methane-dominated fluids by sequestering H2O into hydrous phases (serpentine, brucite, phase A). Carbon isotope compositions of moissanite are consistent with an origin of such fluids from sediments originally rich in organic compounds. Findings of SiC within rocks mostly comprised by hydrous phases (serpentine + brucite) support this model. Both the hydrous phases

  13. Contact Metallization and Packaging Technology Development for SiC Bipolar Junction Transistors, PiN Diodes, and Schottky Diodes Designed for Long-Term Operations at 350degreeC

    Science.gov (United States)

    2006-05-01

    for high temperature contacts. A Bipolar Junction Transistor ( BJT ) in 4H-SiC can operate at higher temperatures (300oC) because its operation does not...AFRL-PR-WP-TR-2006-2181 CONTACT METALLIZATION AND PACKAGING TECHNOLOGY DEVELOPMENT FOR SiC BIPOLAR JUNCTION TRANSISTORS , PiN DIODES, AND...SUBTITLE CONTACT METALLIZATION AND PACKAGING TECHNOLOGY DEVELOPMENT FOR SiC BIPOLAR JUNCTION TRANSISTORS , PiN DIODES, AND SCHOTTKY DIODES DESIGNED

  14. Radiometric flight results from the HyperSpectral Imager for Climate Science (HySICS)

    Science.gov (United States)

    Kopp, Greg; Smith, Paul; Belting, Chris; Castleman, Zach; Drake, Ginger; Espejo, Joey; Heuerman, Karl; Lanzi, James; Stuchlik, David

    2017-04-01

    Long-term monitoring of the Earth-reflected solar spectrum is necessary for discerning and attributing changes in climate. High radiometric accuracy enables such monitoring over decadal timescales with non-overlapping instruments, and high precision enables trend detection on shorter timescales. The HyperSpectral Imager for Climate Science (HySICS) is a visible and near-infrared spatial/spectral imaging spectrometer intended to ultimately achieve ˜ 0.2 % radiometric accuracies of Earth scenes from space, providing an order-of-magnitude improvement over existing space-based imagers. On-orbit calibrations from measurements of spectral solar irradiances acquired by direct views of the Sun enable radiometric calibrations with superior long-term stability than is currently possible with any manmade spaceflight light source or detector. Solar and lunar observations enable in-flight focal-plane array (FPA) flat-fielding and other instrument calibrations. The HySICS has demonstrated this solar cross-calibration technique for future spaceflight instrumentation via two high-altitude balloon flights. The second of these two flights acquired high-radiometric-accuracy measurements of the ground, clouds, the Earth's limb, and the Moon. Those results and the details of the uncertainty analyses of those flight data are described.

  15. How Low Can You Go? Determining a Size Threshold for Implantation of a New Acoustic Transmitter in Age-0 White Sturgeon

    Energy Technology Data Exchange (ETDEWEB)

    Ashton, Neil K.; Liss, Stephanie A.; Walker, Ricardo W.; Brown, Richard S.; Klassen, Cheryl; Backhouse, Stephanie; Bates, Phil; Townsend, Richard L.

    2017-01-01

    Telemetry studies are often used to investigate sturgeon habitat use and movement patterns; however, existing acoustic transmitters are generally too large to implant into age-0 sturgeon without harming the fish. Recent development of a miniaturized acoustic transmitter (cylindrical, 0.7 g in air, 24.2 mm long, 5.0 mm diameter) with up to 365 d battery life has the potential to advance our understanding of age-0 sturgeon ecology in rivers and lakes. Prior to use in field studies, it is essential to conduct experiments evaluating potential adverse transmitter effects on fish. We tested transmitter retention, fish survival, and growth of a broad size range of age-0 white sturgeon (Acipenser transmontanus; 158–277 mm fork length; 26–126 g; 0.6–2.6% transmitter burden) in an 84 d laboratory study, with an ultimate goal of determining a minimum size threshold of sturgeon that can be implanted with this acoustic transmitter. At 84 d post-implantation, transmitter retention and fish survival were 100%. Specific growth rates were reduced at 7 and 14 d post-implantation, resulting in minimum fork length thresholds of 250 and 171 mm, respectively. Juveniles implanted with transmitters regained their growth potential by 28 d post-implantation and no size differences were detected in comparisons with unmarked control fish. This study demonstrates the ability to implant small age-0 sturgeon with high transmitter retention and fish survival, and only minor growth effects. Use of new miniaturized acoustic transmitters may give researchers a means to address questions about young-of-the-year fish recruitment, ecological patterns, and potentially advance conservation management of sturgeon populations.

  16. 5kW phase-shifted full-bridge converter with current doubler using normally-off SiC JFETs designed for 98% efficiency

    DEFF Research Database (Denmark)

    Török, Lajos; Beczkowski, Szymon; Munk-Nielsen, Stig

    2013-01-01

    In this paper a 5kW step-down converter for low-voltage high-current application is presented using normally-off SiC JFETs as high voltage power switches, operating with efficiency close to 98%. Different low voltage side rectification solutions and loss estimations are also presented. As results...

  17. Packaging Technologies for 500 C SiC Electronics and Sensors: Challenges in Material Science and Technology

    Science.gov (United States)

    Chen, Liang-Yu; Neudeck, Philip G.; Behelm, Glenn M.; Spry, David J.; Meredith, Roger D.; Hunter, Gary W.

    2015-01-01

    This paper presents ceramic substrates and thick-film metallization based packaging technologies in development for 500C silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chip-level packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550C. The 96 alumina packaging system composed of chip-level packages and PCBs has been successfully tested with high temperature SiC discrete transistor devices at 500C for over 10,000 hours. In addition to tests in a laboratory environment, a SiC junction field-effect-transistor (JFET) with a packaging system composed of a 96 alumina chip-level package and an alumina printed circuit board was tested on low earth orbit for eighteen months via a NASA International Space Station experiment. In addition to packaging systems for electronics, a spark-plug type sensor package based on this high temperature interconnection system for high temperature SiC capacitive pressure sensors was also developed and tested. In order to further significantly improve the performance of packaging system for higher packaging density, higher operation frequency, power rating, and even higher temperatures, some fundamental material challenges must be addressed. This presentation will discuss previous development and some of the challenges in material science (technology) to improve high temperature dielectrics for packaging applications.

  18. Morphological study of SiC coating developed on 2D carbon composites using MTS precursor in a hot-wall vertical reactor

    Energy Technology Data Exchange (ETDEWEB)

    Venugopalan, Ramani; Prakash, Jyoti; Dakshinamoorthy, Sathiyamoorthy [Bhabha Atomic Research Centre, Mumbai (India). Powder Metallurgy Div.; Nuwad, Jitendra; Sivan Pillai, Chirakarumpil Gopalan; Tyagi, Avesh Kumar [Bhabha Atomic Research Centre, Mumbai (India). Chemistry Div.

    2012-10-15

    Silicon carbide coating was developed using chemical vapor deposition on carbon substrate as a protective coating. The present studies were carried out with methyl trichlorosilane as the SiC precursor, at 1673K along with hydrogen and argon as carrier gas using a high-temperature vertical graphite reactor. The SiC coatings were characterized by means of X-ray diffraction for phase identification. Scanning electron microscopy analysis with energy dispersive X-ray spectrometer was also carried out for microstructure and elemental analysis. From the morphological study of different SiC deposits obtained at varying operating parameters it was observed that methyl trichlorosilane feed rate and hydrogen flow rate play a major role in deciding the nature of deposits and the argon percentage in the mixed gas also plays a vital role. (orig.)

  19. Reliability Assessment of SiC Power MOSFETs From The End User's Perspective

    DEFF Research Database (Denmark)

    Karaventzas, Vasilios Dimitris; Nawaz, Muhammad; Iannuzzo, Francesco

    2016-01-01

    The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging ...... conditions, such as: high electric field, high temperature and high humidity. Finally, a preliminary judgment is performed on each kind of stress, based on the quality assessment of the semiconductor as well as the packaging material.......The reliability of commercial Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) is investigated, and comparative assessment is performed under various test environments. The MOSFETs are tested both regarding the electrical properties of the dies and the packaging...... properties of the devices. The results of each reliability stress are utilized not only for mutual comparison of SiC-based power commercial modules, but also as a tool to understand the underlying physical mechanisms of degradation. Towards this goal, the devices were placed under accelerate stress...

  20. Properties of amorphous SiC coatings deposited on WC-Co substrates

    Directory of Open Access Journals (Sweden)

    Costa A.K.

    2003-01-01

    Full Text Available In this work, silicon carbide films were deposited onto tungsten carbide from a sintered SiC target on a r.f. magnetron sputtering system. Based on previous results about the influence of r.f. power and argon pressure upon the properties of films deposited on silicon substrates, suitable conditions were chosen to produce high quality films on WC-Co pieces. Deposition parameters were chosen in order to obtain high deposition rates (about 30 nm/min at 400 W rf power and acceptable residual stresses (1.5 GPa. Argon pressure affects the energy of particles so that films with higher hardness (30 GPa were obtained at low pressures (0.05 Pa. Wear rates of the coated pieces against a chromium steel ball in a diamond suspension medium were found to be about half of the uncoated ones. Hardness and wear resistance measurements were done also in thermally annealed (200-800 °C samples revealing the effectiveness of SiC coatings to protect tool material against severe mechanical degradation resulting of high temperature (above 500 °C oxidation.

  1. HyperART: non-invasive quantification of leaf traits using hyperspectral absorption-reflectance-transmittance imaging.

    Science.gov (United States)

    Bergsträsser, Sergej; Fanourakis, Dimitrios; Schmittgen, Simone; Cendrero-Mateo, Maria Pilar; Jansen, Marcus; Scharr, Hanno; Rascher, Uwe

    2015-01-01

    Combined assessment of leaf reflectance and transmittance is currently limited to spot (point) measurements. This study introduces a tailor-made hyperspectral absorption-reflectance-transmittance imaging (HyperART) system, yielding a non-invasive determination of both reflectance and transmittance of the whole leaf. We addressed its applicability for analysing plant traits, i.e. assessing Cercospora beticola disease severity or leaf chlorophyll content. To test the accuracy of the obtained data, these were compared with reflectance and transmittance measurements of selected leaves acquired by the point spectroradiometer ASD FieldSpec, equipped with the FluoWat device. The working principle of the HyperART system relies on the upward redirection of transmitted and reflected light (range of 400 to 2500 nm) of a plant sample towards two line scanners. By using both the reflectance and transmittance image, an image of leaf absorption can be calculated. The comparison with the dynamically high-resolution ASD FieldSpec data showed good correlation, underlying the accuracy of the HyperART system. Our experiments showed that variation in both leaf chlorophyll content of four different crop species, due to different fertilization regimes during growth, and fungal symptoms on sugar beet leaves could be accurately estimated and monitored. The use of leaf reflectance and transmittance, as well as their sum (by which the non-absorbed radiation is calculated) obtained by the HyperART system gave considerably improved results in classification of Cercospora leaf spot disease and determination of chlorophyll content. The HyperART system offers the possibility for non-invasive and accurate mapping of leaf transmittance and absorption, significantly expanding the applicability of reflectance, based on mapping spectroscopy, in plant sciences. Therefore, the HyperART system may be readily employed for non-invasive determination of the spatio-temporal dynamics of various plant

  2. Transmittance and Reflectance Spectra of Doped-Polyanisidine-Derived Film in the Visible Light Region

    Energy Technology Data Exchange (ETDEWEB)

    Tapia, A K G [Physics Divisio, Institute of Mathematical Sciences and Physics and University of the Philippines Los Banos, College, Laguna, Philippines, 4031 (Philippines); Catedral, M D [Physics Divisio, Institute of Mathematical Sciences and Physics and University of the Philippines Los Banos, College, Laguna, Philippines, 4031 (Philippines); Herrera, M U [Physics Divisio, Institute of Mathematical Sciences and Physics and University of the Philippines Los Banos, College, Laguna, Philippines, 4031 (Philippines); Tamayo, J P [Institute of Chemistry, University of the Philippines Los Banos, College, Laguna, Philippines, 4031 (Philippines); Rosario, E J R del [Institute of Chemistry, University of the Philippines Los Banos, College, Laguna, Philippines, 4031 (Philippines)

    2006-01-01

    Polyanisidine (PAnis) powder was synthesized using a standard procedure. It was doped with Hydrochloric (HCl) and Perchloric (HClO{sub 4}) Acids. The air-dried PAnis powder was then diluted using Dimethyl Formamide (DMF) as solvent and was spread out in a SiOx transparent glass substrate. An amorphous and semi-transparent film was fabricated seen in a polarizing microscope. The spectral analysis was carried out in the visible region from 400 nm to 700 nm. For HCl-doped sample, the high intensity region in the transmittance spectra occurred at the green portion while the high intensity region for the reflectance spectra was seen at the violet portion. Lastly, for the HClO4-doped sample, the peak intensities are at 536 nm and 516 nm for the transmittance and the reflectance spectra, respectively.

  3. Improvement of the Contact Strength of Al2O3/SiC by a Combination of Shot Peening and Crack-Healing

    Directory of Open Access Journals (Sweden)

    Tomoya Oki

    2013-01-01

    Full Text Available Al2O3/SiC composite ceramics with high crack-healing ability were subjected to shot peening (SP using zirconium oxide shots with several peening pressures and shot diameters. Specimens subjected to SP were heat-treated in air to heal the surface cracks induced by SP. The residual stress, the apparent fracture toughness, and the Weibull distribution of the contact strength were investigated, revealing that the combination of SP and crack-healing is effective for increasing the contact strength and decreasing the scatter of the contact strength of Al2O3/SiC.

  4. A 10-kW SiC Inverter with A Novel Printed Metal Power Module With Integrated Cooling Using Additive Manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    Chinthavali, Madhu Sudhan [ORNL; Ayers, Curtis William [ORNL; Campbell, Steven L [ORNL; Wiles, Randy H [ORNL; Ozpineci, Burak [ORNL

    2014-01-01

    With efforts to reduce the cost, size, and thermal management systems for the power electronics drivetrain in hybrid electric vehicles (HEVs) and plug-in hybrid electric vehicles (PHEVs), wide band gap semiconductors including silicon carbide (SiC) have been identified as possibly being a partial solution. This paper focuses on the development of a 10-kW all SiC inverter using a high power density, integrated printed metal power module with integrated cooling using additive manufacturing techniques. This is the first ever heat sink printed for a power electronics application. About 50% of the inverter was built using additive manufacturing techniques.

  5. Functionalized SiC nanocrystals for tuning of optical, thermal, mechanical and electrical properties of polyvinyl alcohol

    DEFF Research Database (Denmark)

    Saini, Isha; Sharma, Annu; Dhiman, Rajnish

    2017-01-01

    Polyvinyl alcohol (PVA)-SiC nanocomposite films were prepared by incorporating functionalized Silicon Carbide (f-SiC) nanocrystals in PVA matrix. Structural characterization of SiC nanocrystals before and after the functionalization was carried out using Fourier transform infrared spectroscopy (F...... mechanism responsible for charge transport in PVA-SiC nanocomposite films was found to be voltage dependent. Schottky mechanism is the dominant conduction mechanism at high voltages whereas Poole Frenkel mechanism dominates at low voltages....

  6. 47 CFR 90.471 - Points of operation in internal transmitter control systems.

    Science.gov (United States)

    2010-10-01

    ...) SAFETY AND SPECIAL RADIO SERVICES PRIVATE LAND MOBILE RADIO SERVICES Transmitter Control Internal Transmitter Control Systems § 90.471 Points of operation in internal transmitter control systems. The... licensee for internal communications and transmitter control purposes. Operating positions in internal...

  7. 47 CFR 90.475 - Operation of internal transmitter control systems in specially equipped systems.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 5 2010-10-01 2010-10-01 false Operation of internal transmitter control... Control Internal Transmitter Control Systems § 90.475 Operation of internal transmitter control systems in specially equipped systems. (a) An internal transmitter control system need not be designed to meet the...

  8. A Preliminary Study on Light Transmittance Properties of Translucent Concrete Panels with Coarse Waste Glass Inclusions

    OpenAIRE

    Lo Verso, Valerio Roberto Maria; Torta, Annalisa; Pagliolico, Simonetta Lucia

    2015-01-01

    This paper investigates the potential reuse of coarse glass wastes as insert in a high performance cement matrix to produce translucent concrete panels for architectural applications such as interior walls. The effects of the addition of glass scraps on chemical and optical properties of concrete were studied. Alkali-silica reactivity resistance tests were carried out to evaluate the reactivity between amorphous waste glass and alkaline concrete pore solution. Light transmittance LT was evalu...

  9. Solar active envelope module with an adjustable transmittance/absorptance

    Directory of Open Access Journals (Sweden)

    C. Villasante Villasante

    2015-06-01

    Full Text Available A solar active envelope module with a high flexibility degree is proposed in this paper. The transparent module controls the day-lighting of the room, improving the indoor environment, while absorbing the superfluous solar energy inside. That energy is used to increase the efficiency of heating, ventilation, and the air-conditioning (HVAC system of the building. This is carried out through a fine control of the absorptance of the envelope module. The active envelope module consists of three glazed chambers with advanced coatings and frames to assure a minimum thermal transmittance while allowing transparency. A fluid containing heat-absorbing nanoparticles flows inside the central chamber and is heated up due to the impinging solar energy. Unlike other systems proposed in the past, which included transparency control systems based on complex filters and chemical processes, the absorption of the module is controlled by the variation of the thickness of the central chamber with a mechanical device. That is, varying the thickness of the central chamber, it allows controlling the absorptance of the whole system and, as a result, indoor day-lighting and thermal loads. Therefore, a new system is proposed that enables to:  

  10. Intercalated europium metal in epitaxial graphene on SiC

    Science.gov (United States)

    Anderson, Nathaniel A.; Hupalo, Myron; Keavney, David; Tringides, Michael C.; Vaknin, David

    2017-10-01

    X-ray magnetic circular dichroism (XMCD) reveals the magnetic properties of intercalated europium metal under graphene on SiC(0001). The intercalation of Eu nanoclusters (average size 2.5 nm) between graphene and SiC substate are formed by deposition of Eu on epitaxially grown graphene that is subsequently annealed at various temperatures while keeping the integrity of the graphene layer. Using sum-rules analysis of the XMCD of Eu M4 ,5 edges at T =15 K, our samples show paramagnetic-like behavior with distinct anomaly at T ≈90 K, which may be related to the Nèel transition, TN=91 K, of bulk metal Eu. We find no evidence of ferromagnetism due to EuO or antiferromagnetism due to Eu2O3 , indicating that the graphene layer protects the intercalated metallic Eu against oxidation over months of exposure to atmospheric environment.

  11. Progress of d0 magnetism in SiC

    Science.gov (United States)

    Wang, Yutian; Liu, Chenguang; Zhang, Yuming

    2017-03-01

    The properties of defect-induced ferromagnetism ({{{d}}}0 magnetism) in SiC belong to carbon-based material which has been systematically investigated after graphite. In this paper, we reviewed our research progress about {{{d}}}0 magnetism in two aspects, i.e., magnetic source and magnetic coupling mechanism. The {{{V}}}{{Si}} {{{V}}}{{C}} divacancies have been evidenced as the probable source of {{{d}}}0 magnetism in SiC. To trace the ferromagnetic source in microscopic and electronic view, the p electrons of the nearest-neighbor carbon atoms, which are around the {{{V}}}{{Si}} {{{V}}}{{C}} divacancies, are sourced. For magnetic coupling mechanism, a higher divacancy concentration leads to stronger paramagnetic interaction but not stronger ferromagnetic coupling. So the {{{d}}}0 magnetism can probably be explained as a local effect which is incapable of scaling up with the volume.

  12. Assessment of intrinsic small signal parameters of submicron SiC MESFETs

    Science.gov (United States)

    Riaz, Mohammad; Ahmed, Muhammad Mansoor; Rafique, Umair; Ahmed, Umer Farooq

    2018-01-01

    In this paper, a technique has been developed to estimate intrinsic small signal parameters of submicron SiC MESFETs, designed for high power microwave applications. In the developed technique, small signal parameters are extracted by involving drain-to-source current, Ids instead of Schottky barrier depletion layer expression. It has been demonstrated that in SiC MESFETs, the depletion layer gets modified due to intense transverse electric field and/or self-heating effects, which are conventionally not taken into account. Thus, assessment of AC small signal parameters by employing depletion layer expression loses its accuracy for devices meant for high power applications. A set of expressions for AC small signal elements has been developed using Ids and its dependence on device biasing has been discussed. The validity of the proposed technique has been demonstrated using experimental data. Dr. Ahmed research interests are in Microelectronics, Microwave and RF Engineering and he has supervised numerous MS and PhD research projects. He authored over 100 research papers in the field of microelectronics. Dr. Ahmed is a fellow of the Institution of Engineering and Technology (IET), UK.; a Chartered Engineer (CEng) from the UK Engineering Council and holds the title of European Engineer (Eur Ing) from the European Federation of National Engineering Association (FEANI), Brussels. He is a life member of PEC (Pak); EDS & MTTS (USA).

  13. Effects of energetic ion irradiation on WSe2/SiC heterostructures.

    Science.gov (United States)

    Shi, Tan; Walker, Roger C; Jovanovic, Igor; Robinson, Joshua A

    2017-06-23

    The remarkable electronic properties of layered semiconducting transition metal dichalcogenides (TMDs) make them promising candidates for next-generation ultrathin, low-power, high-speed electronics. It has been suggested that electronics based upon ultra-thin TMDs may be appropriate for use in high radiation environments such as space. Here, we present the effects of irradiation by protons, iron, and silver ions at MeV-level energies on a WSe2/6H-SiC vertical heterostructure studied using XPS and UV-Vis-NIR spectroscopy. It was found that with 2 MeV protons, a fluence of 10(16) protons/cm(2) was necessary to induce a significant charge transfer from SiC to WSe2, where a reduction of valence band offset was observed. Simultaneously, a new absorption edge appeared at 1.1 eV below the conduction band of SiC. The irradiation with heavy ions at 10(16) ions/cm(2) converts WSe2 into a mixture of WOx and Se-deficient WSe2. The valence band is also heavily altered due to oxidation and amorphization. However, these doses are in excess of the doses needed to damage TMD-based electronics due to defects generated in common dielectric and substrate materials. As such, the radiation stability of WSe2-based electronics is not expected to be limited by the radiation hardness of WSe2, but rather by the dielectric and substrate.

  14. Position-dependent and millimetre-range photodetection in phototransistors with micrometre-scale graphene on SiC

    Science.gov (United States)

    Sarker, Biddut K.; Cazalas, Edward; Chung, Ting-Fung; Childres, Isaac; Jovanovic, Igor; Chen, Yong P.

    2017-07-01

    The extraordinary optical and electronic properties of graphene make it a promising component of high-performance photodetectors. However, in typical graphene-based photodetectors demonstrated to date, the photoresponse only comes from specific locations near graphene over an area much smaller than the device size. For many optoelectronic device applications, it is desirable to obtain the photoresponse and positional sensitivity over a much larger area. Here, we report the spatial dependence of the photoresponse in backgated graphene field-effect transistors (GFET) on silicon carbide (SiC) substrates by scanning a focused laser beam across the GFET. The GFET shows a nonlocal photoresponse even when the SiC substrate is illuminated at distances greater than 500 µm from the graphene. The photoresponsivity and photocurrent can be varied by more than one order of magnitude depending on the illumination position. Our observations are explained with a numerical model based on charge transport of photoexcited carriers in the substrate.

  15. An Energy Harvesting Underwater Acoustic Transmitter for Aquatic Animals.

    Science.gov (United States)

    Li, Huidong; Tian, Chuan; Lu, Jun; Myjak, Mitchell J; Martinez, Jayson J; Brown, Richard S; Deng, Zhiqun Daniel

    2016-09-20

    Acoustic telemetry is the primary method to actively track aquatic animals for behavioral studies. However, the small storage capacities of the batteries used in the transmitters limit the time that the implanted animals can be studied. In this research, we developed and implemented a battery-free acoustic transmitter that uses a flexible piezoelectric beam to harvest energy from fish swimming as the power source. The transmitter sends out a unique identification code with a sufficiently strong signal (150 dB, ref: 1 μPa at 1 meter) that has a detection range of up to 100 meters. Two prototypes, 100 mm and 77 mm long, respectively, weighing only about 1 gram or less in air, were sub-dermally implanted in two species of live fish. Transmissions were successfully detected as the fish swam in a natural manner. This represents the first known implanted energy-harvesting transmitter demonstrated in vivo. Successful development of this transmitter greatly expands the potential for long-term studies of the behaviors of aquatic animals and for subsequently developing strategies to mitigate the environmental impacts of renewable energy systems.

  16. Microminiature radio frequency transmitter for communication and tracking applications

    Science.gov (United States)

    Crutcher, Richard I.; Emery, Mike S.; Falter, Kelly G.; Nowlin, C. H.; Rochelle, Jim M.; Clonts, Lloyd G.

    1997-02-01

    A micro-miniature radio frequency (rf) transmitter has been developed and demonstrated by the Oak Ridge National Laboratory. The objective of the rf transmitter development was to maximize the transmission distance while drastically shrinking the overall transmitter size, including antenna. Based on analysis and testing, an application-specific integrated circuit (ASIC) with a 16-GHz gallium arsenide (GaAs) oscillator and integrated on-chip antenna was designed and fabricated using microwave monolithic integrated circuit (MMIC) technology. Details of the development and the results of various field tests are discussed. The rf transmitter is applicable to covert surveillance and tracking scenarios due to its small size of 2.2 multiplied by 2.2 mm, including the antenna. Additionally, the 16-GHz frequency is well above the operational range of consumer-grade radio scanners, providing a degree of protection from unauthorized interception. Variations of the transmitter design have been demonstrated for tracking and tagging beacons, transmission of digital data, and transmission of real-time analog video from a surveillance camera. Preliminary laboratory measurements indicate adaptability to direct-sequence spread-spectrum transmission, providing a low probability of intercept and/or detection. Concepts related to law enforcement applications are presented.

  17. An Energy Harvesting Underwater Acoustic Transmitter for Aquatic Animals

    Science.gov (United States)

    Li, Huidong; Tian, Chuan; Lu, Jun; Myjak, Mitchell J.; Martinez, Jayson J.; Brown, Richard S.; Deng, Zhiqun Daniel

    2016-09-01

    Acoustic telemetry is the primary method to actively track aquatic animals for behavioral studies. However, the small storage capacities of the batteries used in the transmitters limit the time that the implanted animals can be studied. In this research, we developed and implemented a battery-free acoustic transmitter that uses a flexible piezoelectric beam to harvest energy from fish swimming as the power source. The transmitter sends out a unique identification code with a sufficiently strong signal (150 dB, ref: 1 μPa at 1 meter) that has a detection range of up to 100 meters. Two prototypes, 100 mm and 77 mm long, respectively, weighing only about 1 gram or less in air, were sub-dermally implanted in two species of live fish. Transmissions were successfully detected as the fish swam in a natural manner. This represents the first known implanted energy-harvesting transmitter demonstrated in vivo. Successful development of this transmitter greatly expands the potential for long-term studies of the behaviors of aquatic animals and for subsequently developing strategies to mitigate the environmental impacts of renewable energy systems.

  18. Identification and tackling of a parasitic surface compound in SiC and Si-rich carbide films

    Energy Technology Data Exchange (ETDEWEB)

    Canino, M., E-mail: canino@bo.imm.cnr.it [CNR-IMM, via Gobetti 101, 40129 Bologna (Italy); Summonte, C.; Allegrezza, M. [CNR-IMM, via Gobetti 101, 40129 Bologna (Italy); Shukla, Rimpy [CNR-IMM, via Gobetti 101, 40129 Bologna (Italy); Centre of Non-Conventional Energy Resources, University of Rajasthan, Jaipur (India); Jain, I.P. [Centre of Non-Conventional Energy Resources, University of Rajasthan, Jaipur (India); Bellettato, M.; Desalvo, A.; Mancarella, F.; Sanmartin, M. [CNR-IMM, via Gobetti 101, 40129 Bologna (Italy); Terrasi, A. [CNR-IMM, via Santa Sofia 64, 95123 Catania (Italy); Löper, P.; Schnabel, M.; Janz, S. [Fraunhofer Institute for Solar Energy Systems, Heidenhofstr. 2, 79110 Freiburg (Germany)

    2013-05-15

    Highlights: ► Silicon carbide and silicon rich carbide films are prepared by PECVD. ► Annealing at 1100 °C promotes Si nanocrystal formation in SiC. ► A parasitic SiO{sub x}C{sub y} compound is formed on the surface during annealing. ► The surface affects optical and electrical properties of the nanocrystal layer. ► We analyze a fabrication sequence that minimizes oxidation. ► The resulting surface is SiC-rich. -- Abstract: Silicon carbide and silicon rich carbide (SiC and SRC) thin films were prepared by PECVD and annealed at 1100 °C. Such a treatment, when applied to SiC/SRC multilayers, aimed at the formation of silicon nanocrystals, that have attracted considerable attention as tunable band-gap materials for photovoltaic applications. Optical and structural techniques (X-ray photoelectron spectroscopy, Reflectance and Transmittance, Fourier Transformed Infrared Spectroscopy) were used to evidence the formation, during the annealing treatment in nominally inert atmosphere, of a parasitic ternary SiO{sub x}C{sub y} surface compound, that consumed part of the originally deposited material and behaved as a preferential conductive path with respect to the nanocrystal layer in horizontal electrical conductivity measurements. The SiO{sub x}C{sub y} compound was HF-resistant, with composition dependent on the underlying matrix. It gave rise to a Si-O related vibration in FTIR analysis, that may be misinterpreted as due to silicon oxide. The compound, if neglected, can affect the structural and electrical characterization of the material. To overcome this problem, a procedure is analyzed, based on the deposition of a sacrificial capping a-Si:H layer that partially oxidizes, and is removed by tetra methyl ammonium hydroxide (TMAH) after annealing. XPS analysis revealed that the resulting surface is mainly made up of SiC regardless of the composition of the underlying SRC layer. Subsequent SF{sub 6}:O{sub 2} dry etching results in a porous SiC-rich surface

  19. Simulations of Proton Implantation in Silicon Carbide (SiC)

    Science.gov (United States)

    2016-03-31

    philip.feng@case.edu Abstract: We report on exploratory research effort with preliminary results on investigating fundamental radiation effects in...of implanting protons (hydrogen ions, H+) into SiC thin layers on silicon (Si) substrate, and explore the ion implantation conditions that are...create SiC-on-insulator (SiC-on-SiO2) films and structures [4,5]. It is important to understand and control the implantation depth. Presented here

  20. SiC Microsensor with Piezoresistive Diamond Sensing Elements

    Science.gov (United States)

    1992-12-31

    AD-A.61 346 SiC MICROSENSOR WITH PIEZORESISTIVE DIAMOND SENSING ELEMENTS Kuli/e Semiconductor Products, Inc Principal Investigator: Dr. A.D. Kurtz...Davidson and A.D. Kurtz 7. PERORMING ORGANIZATION NAM.(S) ANO AD-SS-ES) PIRJQAMr( OAGANLM Kulite Semiconductor Products, Inc. REPORT NUMBER One Willow...techniques have been developed for Si, which allow the fabrication of integral force collector- piezoresistor networks [2]. However, there are fundamental

  1. Modelling of ion implantation in SiC crystals

    Energy Technology Data Exchange (ETDEWEB)

    Chakarov, Ivan [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)]. E-mail: ivan.chakarov@silvaco.com; Temkin, Misha [SILVACO International, 4701 Patrick Henry Drive, Building 2, Santa Clara, CA 95054 (United States)

    2006-01-15

    An advanced electronic stopping model for ion implantation in SiC has been implemented within the binary collision approximation. The model has been thoroughly tested and validated for Al implantation into 4H-, 6H-SiC under different initial implant conditions. A very good agreement between calculated and experimental profiles has been achieved. The model has been integrated in an industrial technology CAD process simulator.

  2. Tribological Performance of Ni3Al Matrix Self-Lubricating Composites Containing Multilayer Graphene and Ti3SiC2 at Elevated Temperatures

    Science.gov (United States)

    Yan, Zhao; Shi, Xiaoliang; Huang, Yuchun; Deng, Xiaobin; Yang, Kang; Liu, Xiyao

    2017-09-01

    The application of Ni3Al-based alloy (NA) in the field of aerospace was limited by its poor tribological properties. For improving the tribological performance of NA, multilayer graphene (MLG) and Ti3SiC2 were added in Ni3Al matrix composites. Tribological behavior of Ni3Al matrix composites containing 1.5 wt.% MLG and 10 wt.% Ti3SiC2 (NMT) against Si3N4 ball at 12 N-0.2 m/s from 25 to 750 °C was investigated. The results showed that NMT exhibited the excellent tribological behavior [lower friction coefficients (0.26-0.57) and less wear resistance (3.1-6.5 × 10-6 mm3 N-1 m-1)] due to synergetic effect of MLG and Ti3SiC2 over a wide temperature range from 25 to 750 °C. At 25-350 °C, part of MLG enriched on worn surface could play a role in reducing friction and improving wear resistance. At 350-550 °C, although MLG gradually lost the lubricating properties, the partial decomposition of Ti3SiC2 could continually improve the tribological properties of NMT. At 550-750 °C, Ti3SiC2 on worn surface was oxidized to form lubricating film, while Ti3SiC2 in the subsurface played an important role in supporting the film, resulting in the excellent high-temperature tribological performance. The research had good guiding significance for the preparation of wide temperature range self-lubricating material and the study of synergetic effect of complex solid lubricants.

  3. Surface engineering of SiC via sublimation etching

    Energy Technology Data Exchange (ETDEWEB)

    Jokubavicius, Valdas, E-mail: valjo@ifm.liu.se [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Yazdi, Gholam R.; Ivanov, Ivan G. [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden); Niu, Yuran; Zakharov, Alexei [Max Lab, Lund University, S-22100 Lund (Sweden); Iakimov, Tihomir; Syväjärvi, Mikael; Yakimova, Rositsa [Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)

    2016-12-30

    Highlights: • Comparison of 6H-, 4H- and 3C-SiC sublimation etching. • Effects of Si-C and Si-C-Ta chemical systems on etching mechanisms. • Effect of etching ambient on surface reconstruction. • Application of etched 4H-SiC surface for the growth of graphene nanoribbons is illustrated. - Abstract: We present a technique for etching of SiC which is based on sublimation and can be used to modify the morphology and reconstruction of silicon carbide surface for subsequent epitaxial growth of various materials, for example graphene. The sublimation etching of 6H-, 4H- and 3C-SiC was explored in vacuum (10{sup −5} mbar) and Ar (700 mbar) ambient using two different etching arrangements which can be considered as Si-C and Si-C-Ta chemical systems exhibiting different vapor phase stoichiometry at a given temperature. The surfaces of different polytypes etched under similar conditions are compared and the etching mechanism is discussed with an emphasis on the role of tantalum as a carbon getter. To demonstrate applicability of such etching process graphene nanoribbons were grown on a 4H-SiC surface that was pre-patterned using the thermal etching technique presented in this study.

  4. FDTD simulation of transmittance characteristics of one-dimensional conducting electrodes.

    Science.gov (United States)

    Lee, Kilbock; Song, Seok Ho; Ahn, Jinho

    2014-03-24

    We investigated transparent conducting electrodes consisting of periodic one-dimensional Ag or Al grids with widths from 25 nm to 5 μm via the finite-difference time-domain method. To retain high transmittance, two grid configurations with opening ratios of 90% and 95% were simulated. Polarization-dependent characteristics of the transmission spectra revealed that the overall transmittance of micron-scale grid electrodes may be estimated by the sum of light power passing through the uncovered area and the light power penetrating the covered metal layer. However, several dominant physical phenomena significantly affect the transmission spectra of the nanoscale grids: Rayleigh anomaly, transmission decay in TE polarized mode, and localized surface plasmon resonance. We conclude that, for applications of transparent electrodes, the critical feature sizes of conducting 1D grids should not be less than the wavelength scale in order to maintain uniform and predictable transmission spectra and low electrical resistivity.

  5. A method of reconstructing the spatial measurement network by mobile measurement transmitter for shipbuilding

    Science.gov (United States)

    Guo, Siyang; Lin, Jiarui; Yang, Linghui; Ren, Yongjie; Guo, Yin

    2017-07-01

    The workshop Measurement Position System (wMPS) is a distributed measurement system which is suitable for the large-scale metrology. However, there are some inevitable measurement problems in the shipbuilding industry, such as the restriction by obstacles and limited measurement range. To deal with these factors, this paper presents a method of reconstructing the spatial measurement network by mobile transmitter. A high-precision coordinate control network with more than six target points is established. The mobile measuring transmitter can be added into the measurement network using this coordinate control network with the spatial resection method. This method reconstructs the measurement network and broadens the measurement scope efficiently. To verify this method, two comparison experiments are designed with the laser tracker as the reference. The results demonstrate that the accuracy of point-to-point length is better than 0.4mm and the accuracy of coordinate measurement is better than 0.6mm.

  6. Morphological analysis of zirconium nuclear fuel retaining rods braided with SiC: Quality assurance and defect identification

    Energy Technology Data Exchange (ETDEWEB)

    Glazoff, Michael V., E-mail: Michael.Glazoff@inl.gov [Idaho National Laboratory, P.O. Box 1625, Idaho Falls, ID 83415-3710 (United States); Hiromoto, Robert; Tokuhiro, Akira [University of Idaho, CAES, Dept. of Nuclear Engineering, Idaho Falls, ID 83401 (United States)

    2014-08-01

    Highlights: • The stability of materials under extreme conditions is an important issue for the safety of nuclear reactors. • To improve zircaloys’ thermal stability in off-normal conditions, coating of SiC filaments is considered because silicon carbide possesses remarkable inertness at high temperatures. • Mathematical morphology was used for automatic defect identification in Zircaloy-4 rods braided with the layer of SiC filament. • The original mathematical morphology algorithms allowing solving the problem of quality assurance were developed. • In nuclear industry, such algorithms are used for the first time. - Abstract: In the after-Fukushima world, the stability of materials under extreme conditions is an important issue for the safety of nuclear reactors. Among the methods explored currently to improve zircaloys’ thermal stability in off-normal conditions, using a protective coat of the SiC filaments is considered because silicon carbide is well known for its remarkable chemical inertness at high temperatures. A typical SiC fiber contains ∼50,000 individual filaments of 5–10 μm in diameter. In this paper, an effort was made to develop and apply mathematical morphology to the process of automatic defect identification in Zircaloy-4 rods braided with the protective layer of the silicon carbide filament. However, the issues of the braiding quality have to be addressed to ensure its full protective potential. We present the original mathematical morphology algorithms that allow solving this problem of quality assurance successfully. In nuclear industry, such algorithms are used for the first time, and could be easily generalized to the case of automated continuous monitoring for defect identification in the future.

  7. High Temperature Silicon Carbide (SiC) Traction Motor Drive

    Science.gov (United States)

    2011-08-09

    board with integrated busbars is necessary. These arrays can be seen in Figure 13. In order to withstand the thermal environment within the motor...chassis isolation. Insulation of busbars , use of insulation barriers, careful orientation of components for optimum power flow, and selection and...motor drive. Busbar connections are provided for input DC power as well as output AC power to the motor. A single circular military style

  8. Joint Transmitter-Receiver Optimization in the Downlink CDMA Systems

    Directory of Open Access Journals (Sweden)

    Mohammad Saquib

    2002-08-01

    Full Text Available To maximize the downlink code-division multiple access (CDMA system capacity, we propose to minimize the total transmitted power of the system subject to users′ signal-to-interference ratio (SIR requirements via designing optimum transmitter sequences and utilizing linear optimum receivers (minimum mean square error (MMSE receiver. In our work on joint transmitter-receiver design for the downlink CDMA systems with multiple antennas and multipath channels, we develop several optimization algorithms by considering various system constraints and prove their convergence. We empirically observed that under the optimization algorithm with no constraint on the system, the optimum receiver structure matches the received transmitter sequences. A simulation study is performed to see how the different practical system constraints penalize the system with respect to the optimum algorithm with no constraint on the system.

  9. Ultra-efficient 10 Gb/s hybrid integrated silicon photonic transmitter and receiver.

    Science.gov (United States)

    Zheng, Xuezhe; Patil, Dinesh; Lexau, Jon; Liu, Frankie; Li, Guoliang; Thacker, Hiren; Luo, Ying; Shubin, Ivan; Li, Jieda; Yao, Jin; Dong, Po; Feng, Dazeng; Asghari, Mehdi; Pinguet, Thierry; Mekis, Attila; Amberg, Philip; Dayringer, Michael; Gainsley, Jon; Moghadam, Hesam Fathi; Alon, Elad; Raj, Kannan; Ho, Ron; Cunningham, John E; Krishnamoorthy, Ashok V

    2011-03-14

    Using low parasitic microsolder bumping, we hybrid integrated efficient photonic devices from different platforms with advanced 40 nm CMOS VLSI circuits to build ultra-low power silicon photonic transmitters and receivers for potential applications in high performance inter/intra-chip interconnects. We used a depletion racetrack ring modulator with improved electro-optic efficiency to allow stepper optical photo lithography for reduced fabrication complexity. Integrated with a low power cascode 2 V CMOS driver, the hybrid silicon photonic transmitter achieved better than 7 dB extinction ratio for 10 Gbps operation with a record low power consumption of 1.35 mW. A received power penalty of about 1 dB was measured for a BER of 10(-12) compared to an off-the-shelf lightwave LiNOb3 transmitter, which comes mostly from the non-perfect extinction ratio. Similarly, a Ge waveguide detector fabricated using 130 nm SOI CMOS process was integrated with low power VLSI circuits using hybrid bonding. The all CMOS hybrid silicon photonic receiver achieved sensitivity of -17 dBm for a BER of 10(-12) at 10 Gbps, consuming an ultra-low power of 3.95 mW (or 395 fJ/bit in energy efficiency). The scalable hybrid integration enables continued photonic device improvements by leveraging advanced CMOS technologies with maximum flexibility, which is critical for developing ultra-low power high performance photonic interconnects for future computing systems.

  10. Optical fiber ultrasound transmitter with electrospun carbon nanotube-polymer composite

    Science.gov (United States)

    Poduval, Radhika K.; Noimark, Sacha; Colchester, Richard J.; Macdonald, Thomas J.; Parkin, Ivan P.; Desjardins, Adrien E.; Papakonstantinou, Ioannis

    2017-05-01

    All-optical ultrasound transducers are promising for imaging applications in minimally invasive surgery. In these devices, ultrasound is transmitted and received through laser modulation, and they can be readily miniaturized using optical fibers for light delivery. Here, we report optical ultrasound transmitters fabricated by electrospinning an absorbing polymer composite directly onto the end-face of optical fibers. The composite coating consisting of an aqueous dispersion of multi-walled carbon nanotubes (MWCNTs) in polyvinyl alcohol was directly electrospun onto the cleaved surface of a multimode optical fiber and subsequently dip-coated with polydimethylsiloxane (PDMS). This formed a uniform nanofibrous absorbing mesh over the optical fiber end-face wherein the constituent MWCNTs were aligned preferentially along individual nanofibers. Infiltration of the PDMS through this nanofibrous mesh onto the underlying substrate was observed and the resulting composites exhibited high optical absorption (>97%). Thickness control from 2.3 μm to 41.4 μm was obtained by varying the electrospinning time. Under laser excitation with 11 μJ pulse energy, ultrasound pressures of 1.59 MPa were achieved at 1.5 mm from the coatings. On comparing the electrospun ultrasound transmitters with a dip-coated reference fabricated using the same constituent materials and possessing identical optical absorption, a five-fold increase in the generated pressure and wider bandwidth was observed. The electrospun transmitters exhibited high optical absorption, good elastomer infiltration, and ultrasound generation capability in the range of pressures used for clinical pulse-echo imaging. All-optical ultrasound probes with such transmitters fabricated by electrospinning could be well-suited for incorporation into catheters and needles for diagnostics and therapeutic applications.

  11. Bit- and Power-Loading—A Comparative Study on Maximizing the Capacity of RSOA Based Colorless DMT Transmitters

    Directory of Open Access Journals (Sweden)

    Simon Arega Gebrewold

    2017-09-01

    Full Text Available We present a comparative study of the capacity increase brought by bit- and power-loading discrete multi-tone (DMT modulation for low-cost colorless transmitters. Three interesting reflective semiconductor optical amplifier (RSOA based colorless transmitter configurations are compared: First, an amplified spontaneous emission (ASE spectrum-sliced source; second, a self-seeded RSOA fiber cavity laser (FCL and third, an externally seeded RSOA. With bit- and power-loaded DMT, we report record high line rates of 6.25, 20.1 and 30.7 Gbit/s and line rates of 4.17, 10.1 and 24.5 Gbit/s in a back-to-back and in a 25 km nonzero dispersion shifted fiber (NZDSF transmission experiments for the three transmitter configurations, respectively. In all the experiments, BER (bit error ratios below an FEC (forward error correction limit of 7.5 × 10−3 were achieved.

  12. Examination of an optical transmittance test for photovoltaic encapsulation materials

    Energy Technology Data Exchange (ETDEWEB)

    Miller, David C.; Bengoechea, Jaione; Bokria, Jayesh G.; Köhl, Michael; Powell, Nick E.; Smith, Michael E.; White, Michael D.; Wilson, Helen Rose; Wohlgemuth, John H.; Dhere, Neelkanth G.; Wohlgemuth, John H.; Lynn, Kevin W.

    2013-09-24

    The optical transmittance of encapsulation materials is a key characteristic for their use in photovoltaic (PV) modules. Changes in transmittance with time in the field affect module performance, which may impact product warranties. Transmittance is important in product development, module manufacturing, and field power production (both immediate and long-term). Therefore, an international standard (IEC 62788-1-4) has recently been proposed by the Encapsulation Task-Group within the Working Group 2 (WG2) of the International Electrotechnical Commission (IEC) Technical Committee 82 (TC82) for the quantification of the optical performance of PV encapsulation materials. Existing standards, such as ASTM E903, are general and more appropriately applied to concentrated solar power than to PV. Starting from the optical transmittance measurement, the solar-weighted transmittance of photon irradiance, yellowness index (which may be used in aging studies to assess durability), and ultraviolet (UV) cut-off wavelength may all be determined using the proposed standard. The details of the proposed test are described. The results of a round-robin experiment (for five materials) conducted at seven laboratories to validate the test procedure using representative materials are also presented. For example, the Encapsulation Group actively explored the measurement requirements (wavelength range and resolution), the requirements for the spectrophotometer (including the integrating sphere and instrument accessories, such as a depolarizer), specimen requirements (choice of glass-superstrate and -substrate), and data analysis (relative to the light that may be used in the PV application). The round-robin experiment identified both intra- and inter-laboratory instrument precision and bias for five encapsulation materials (encompassing a range of transmittance and haze-formation characteristics).

  13. Wafer-scale epitaxial graphene on SiC for sensing applications

    Science.gov (United States)

    Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

    2015-12-01

    The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

  14. Modeling of the relaxation kinetics of phosphorus doped metastable tensile strained Si:C alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ulomek, Felix; Mohles, Volker [Institut fuer Metallkunde und Metallphysik, RWTH Aachen (Germany); Ostermay, Ina; Kammler, Thorsten [GLOBALFOUNDRIES Dresden Module One LLC and Co. KG, Wilschdorfer Landstrasse 101, 01109 Dresden (Germany)

    2011-07-01

    In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C are of interest. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4.10{sup 20} At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution x-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. We model the macroscopic relaxation behavior by statistical simulations and extrapolate the behaviors for different relaxation conditions. The resulting activation energies, which are fit parameters in this model, are compared to values of atomistic simulations.

  15. Modeling of the relaxation kinetics of metastable tensile strained Si:C alloys

    Energy Technology Data Exchange (ETDEWEB)

    Ulomek, Felix; Mohles, Volker [Institut fuer Metallkunde und Metallphysik, RWTH Aachen (Germany); Ostermay, Ina [Fraunhofer-Center Nanoelektronische Technologien, Dresden (Germany); Kammler, Thorsten [GLOBALFOUNDRIES Dresden Module One LLC and Co. KG, Dresden (Germany)

    2010-07-01

    In order to enhance the performance of CMOS transistors, embedded epitaxial layers of Si:C can be used. In the present work, Si:C layers with Carbon contents up to 1.9 at-% and in-situ Phosphorus doping up to 4 x 10{sup 20}At/cm{sup 3} have been investigated. Due to the low solubility of Carbon in Silicon (0.0004 at.-% at the melting point), all layers considered in this work are metastable and tend to relax. Since it is crucial to the application to retain the strain of those layers, the responsible mechanisms must be understood. The relaxation during thermal treatment was studied by high resolution X-ray diffraction and was found to behave differently, depending on Carbon content and Phosphorus doping concentration. In this work, we propose a relaxation mechanism based on a kick-out reaction of substitutional Carbon which is accelerated by Phosphorus content through transient enhanced diffusion. We simulate the time evolution of layer relaxation as a function of alloying content, layer thickness and temperature. Parameters for the reaction kinetics are obtained by fitting to the experimental data.

  16. Atomic-Scale Mechanism of Efficient Hydrogen Evolution at SiC Nanocrystal Electrodes.

    Science.gov (United States)

    Shen, Xiao; Pantelides, Sokrates T

    2013-01-03

    Efficient electrochemical hydrogen evolution at ultrathin 3C-SiC nanocrystal electrodes in acid solutions was recently reported, but the atomic-scale mechanism of the reaction was not identified. Here we report quantum mechanical calculations of pertinent reactions and show that the reaction happens at pre-existing hydrogenated surface Si-H sites through a mechanism that is related to the Volmer-Heyrovsky mechanism that occurs in metals. Here the Heyrovsky reaction occurs as the first step, where an electron from the substrate reacts with a hydronium adsorbed at a Si-H site, creating an H2 molecule and a Si dangling bond. The Volmer reaction follows and regenerates the Si-H. This ordering of reactions is supported by the fact that the hydrogen coverage on SiC electrodes does not depend on the applied voltage, in contrast to the cases of metal electrodes. Moreover, the Volmer reaction, which is a one-step process on metal surface, is a two-step process here. We then show that the rise of the conduction band due to quantum confinement accounts for the fact that only ultrasmall SiC nanocrystals are electrochemically active. We also show that the ability of a Si-H bond to bind a hydronium is essential for the hydrogen evolution to occur at high rate.

  17. DISTRIBUTION OF DISLOCATIONS IN AlN CRYSTALS GROWN ON EVAPORATING SiC SUBSTRATES

    Directory of Open Access Journals (Sweden)

    Tatiana S. Argunova

    2016-11-01

    Full Text Available By the use of high-resolution X-ray diffractometry and synchrotron radiation topography, the distribution of dislocations in AlN crystals grown on evaporating SiC substrates is studied. The growth of AlN layer in one process with the evaporation of SiC substrate gave the possibility to prevent the relaxation of thermal stresses through cracking of AlN during cooling the structure. The continuous 0.2-1.5 mm thick plates were used as the model objects for the study of dislocation structure near the AlN/SiC interface. Analysis of the broadening of the Bragg reflection peaks, the shape of scattering maps in reciprocal space and topographs showed that dislocations formed the mosaic structure, different from the distribution of threading dislocations in GaN epilayers. A theoretical model for misfit strain relaxation in the growing AlN layer is suggested. The results enable to clarify the dislocation processes during sublimation growth of industrial quality AlN crystals.

  18. Liquid phase sintered SiC ceramics from starting materials of different grade Cerâmicas à base de SiC sinterizadas via fase líquida a partir de matérias-primas de diferentes purezas

    Directory of Open Access Journals (Sweden)

    V. A. Izhevskyi

    2004-09-01

    Full Text Available Possibility of high performance ceramics manufactured from commercial SiC powder of technical grade has been shown. Sintering behavior and microstructure formation under conditions of liquid phase sintering (LPS with oxynitride sintering aids (AlN-Y2O3 of three SiC-based compositions have been investigated. Two of the compositions were based on Alcoa 1000 SiC powder of technical grade, and the third one, which was used as a reference, was based on H.C. Starck UF-15 fine grade commercial powder. Milling process used for Alcoa 1000 SiC powder granulometry improvement has been investigated in detail, while chemical treatment of milled SiC powders has been used for pick-up impurities removal. Dilatometric experiments showed that SiC powder of technical grade after appropriate treatment exhibits sinterability comparable with the fine grade SiC. Microstructural investigations performed on sintered samples showed that the final microstructure of the Alcoa 1000 SiC based materials was practically identical with the H.C. Starck SiC based reference ones. Preliminary investigations of hardness and fracture toughness were carried out revealing excellent results for the materials produced from cheaper, nationally produced starting powder.Neste trabalho é apresentada a possibilidade de obtenção de cerâmicas de SiC de alto desempenho a partir de matéria-prima comercial de grau técnico. Foi realizado o estudo de sinterização via fase líquida e desenvolvimento microestrutural de três composições à base de SiC tendo como aditivos de sinterização AlN e Y2O3 . Duas destas composições são à base de SiC-1000 da Alcoa, grau técnico, e a terceira, utilizada como referência, à base do UF-15 da H.C. Starck - Alemanha, pó comercial de granulometria fina. O processo de moagem do pó SiC-1000 da Alcoa foi acompanhado por medidas de distribuição granulométrica e posterior ataque químico, para remoção de impurezas. Os pós de grau técnico, ap

  19. New energy-saving greenhouses with high light transmittance

    NARCIS (Netherlands)

    Sonneveld, P.J.; Swinkels, G.L.A.M.

    2005-01-01

    Doel van dit onderzoek is de ontwikkeling van een nieuwe energiebesparende kas met een hoge lichtdoorlaatbaarheid dat gebruik maakt van een nieuwe zig-zag, dubbele web structuur dat energiebesparing en hoge lichttransmissie combineert

  20. High Speed Surface Thermocouples Interface to Wireless Transmitters

    Science.gov (United States)

    2017-03-15

    thermocouple. IRT used the laser welder to provide this environment. The machine was set to a specific energy density, duration, and focus . Each... geothermal environment Inside underwater steam vents to measure temperature Oceanographers Or use a manometer to measure pressure at depth

  1. Mechanical properties of SiC composites neutron irradiated under light water reactor relevant temperature and dose conditions

    Science.gov (United States)

    Koyanagi, Takaaki; Katoh, Yutai

    2017-10-01

    Silicon carbide (SiC) fiber-reinforced SiC matrix (SiC/SiC) composites are being actively investigated for use in accident-tolerant core structures of light water reactors (LWRs). Owing to the limited number of irradiation studies previously conducted at LWR-coolant temperature, this study examined SiC/SiC composites following neutron irradiation at 230-340 °C to 2.0 and 11.8 dpa in the High Flux Isotope Reactor. The investigated materials were chemical vapor infiltrated (CVI) SiC/SiC composites with three different reinforcement fibers. The fiber materials were monolayer pyrolytic carbon (PyC) -coated Hi-Nicalon™ Type-S (HNS), Tyranno™ SA3 (SA3), and SCS-Ultra™ (SCS) SiC fibers. The irradiation resistance of these composites was investigated based on flexural behavior, dynamic Young's modulus, swelling, and microstructures. There was no notable mechanical properties degradation of the irradiated HNS and SA3 SiC/SiC composites except for reduction of the Young's moduli by up to 18%. The microstructural stability of these composites supported the absence of degradation. In addition, no progressive swelling from 2.0 to 11.8 dpa was confirmed for these composites. On the other hand, the SCS composite showed significant mechanical degradation associated with cracking within the fiber. This study determined that SiC/SiC composites with HNS or SA3 SiC/SiC fibers, a PyC interphase, and a CVI SiC matrix retain their properties beyond the lifetime dose for LWR fuel cladding at the relevant temperature.

  2. Review of data on irradiation creep of monolithic SiC

    Energy Technology Data Exchange (ETDEWEB)

    Garner, F.A.; Youngblood, G.E.; Hamilton, M.L. [Pacific Northwest National Laboratory, Richland, WA (United States)

    1996-04-01

    An effort is now underway to design an irradiation creep experiment involving SiC composites to SiC fibers. In order to successfully design such an experiment, it is necessary to review and assess the available data for monolithic SiC to establish the possible bounds of creep behavior for the composite. The data available show that monolithic SiC will indeed creep at a higher rate under irradiation compared to that of thermal creep, and surprisingly, it will do so in a temperature-dependant manner that is typical of metals.

  3. New Possibilities of Power Electronic Structures Using SiC Technology

    Directory of Open Access Journals (Sweden)

    Robert Sul

    2006-01-01

    Full Text Available This paper is dedicated to the recent unprecedented boom of SiC electronic technology. The contribution deals with brief survey of those properties. In particular, the differences (both good and bad between SiC electronics technology and well-known silicon VLSI technology are highlighted. Projected performance benefits of SiC electronics are given for several large-scale applications on the end of the contribution. The basic properties of SiC material have been discussed already on the beginning of 80’s, also at our university.

  4. Chemical compatibility between UO2 fuel and SiC cladding for LWRs. Application to ATF (Accident-Tolerant Fuels)

    Science.gov (United States)

    Braun, James; Guéneau, Christine; Alpettaz, Thierry; Sauder, Cédric; Brackx, Emmanuelle; Domenger, Renaud; Gossé, Stéphane; Balbaud-Célérier, Fanny

    2017-04-01

    Silicon carbide-silicon carbide (SiC/SiC) composites are considered to replace the current zirconium-based cladding materials thanks to their good behavior under irradiation and their resistance under oxidative environments at high temperature. In the present work, a thermodynamic analysis of the UO2±x/SiC system is performed. Moreover, using two different experimental methods, the chemical compatibility of SiC towards uranium dioxide, with various oxygen contents (UO2±x) is investigated in the 1500-1970 K temperature range. The reaction leads to the formation of mainly uranium silicides and carbides phases along with CO and SiO gas release. Knudsen Cell Mass Spectrometry is used to measure the gas release occurring during the reaction between UO2+x and SiC powders as function of time and temperature. These experimental conditions are representative of an open system. Diffusion couple experiments with pellets are also performed to study the reaction kinetics in closed system conditions. In both cases, a limited chemical reaction is observed below 1700 K, whereas the reaction is enhanced at higher temperature due to the decomposition of SiC leading to Si vaporization. The temperature of formation of the liquid phase is found to lie between 1850 < T < 1950 K.

  5. Microwave-Assisted Synthesis of SiC Nanoparticles for the Efficient Adsorptive Removal of Nitroimidazole Antibiotics from Aqueous Solution

    Directory of Open Access Journals (Sweden)

    Ali Fakhri

    2017-02-01

    Full Text Available Environmental pollution caused by the improper disposal of pharmaceuticals is a matter of global concern, and warrants immediate attention. Of particular concern is the aquatic contamination caused by the increasing use of antibiotics, which could give rise to superbugs. While researchers have mainly focused on improving the adsorption capacity of mostly activated carbon-based adsorbents, we have developed a non-conventional adsorbent (SiC nanoparticles in the present work for the adsorptive removal of four different nitroimidazole antibiotics, namely metronidazole (MNZ, dimetridazole (DMZ, ronidazole (RNZ, and tinidazole (TNZ. In addition to the unique properties which are inherent to SiC, the present adsorbent not only possesses a high adsorption capacity, but also shows one of the highest adsorption rates; both of which are prerequisites for an efficient and cost-effective adsorption-based separation technology. Silicon carbide (SiC nanoparticles, synthesized by a microwave-assisted method, were thoroughly characterized using X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and the Brunauer–Emmett–Teller method. The adsorption isotherm data were accurately described by the Langmuir isotherm model. On the other hand, the adsorption kinetics, closely represented by the pseudo-second order kinetic model, were faster than most previously reported adsorbents. The reaction rate constants were 0.0089, 0.0079, 0.0072, and 0.0055 g/(mg min, for MNZ, DMZ, RNZ, and TNZ, respectively.

  6. Small Incision Cataract Surgery (SICS with Clear Corneal Incision and SICS with Scleral Incision – A Comparative Study

    Directory of Open Access Journals (Sweden)

    Md Shafiqul Alam

    2014-01-01

    Full Text Available Background: Age related cataract is the leading cause of blindness and visual impairment throughout the world. With the advent of microsurgical facilities simple cataract extraction surgery has been replaced by small incision cataract surgery (SICS with posterior chamber intra ocular lens implant, which can be done either with clear corneal incision or scleral incision. Objective: To compare the post operative visual outcome in these two procedures of cataract surgery. Materials and method: This comparative study was carried out in the department of Ophthalmology, Delta Medical College & Hospital, Dhaka, Bangladesh, during the period of January 2010 to December 2012. Total 60 subjects indicated for age related cataract surgery irrespective of sex with the age range of 40-80 years with predefined inclusion and exclusion criteria were enrolled in the study. Subjects were randomly and equally distributed in 2 groups; Group A for SICS with clear corneal incision and group B for SICS with scleral incision. Post operative visual out come was evaluated by determining visual acuity and astigmatism in different occasions and was compared between groups. Statistical analysis was done by SPSS for windows version12. Results: The highest age incidence (43.3% was found between 61 to 70 years of age group. Among study subjects 40 were male and 20 were female. Preoperative visual acuity and astigmatism were evenly distributed between groups. Regarding postoperative unaided visual outcome, 6/12 or better visual acuity was found in 19.98% cases in group A and 39.6% cases in group B at 1st week. At 6th week 6/6 vision was found in 36.3% in Group A and 56.1% in Group B and 46.2% in group A and 66% in group B without and with correction respectively. With refractive correction, 6/6 vision was attained in 60% subjects of group A and 86.67% of group B at 8th week. Post operative visual acuity was statistically significant in all occasions. Postoperative astigmatism of

  7. Impact of light transmittance mode on polymerisation kinetics in bulk-fill resin-based composites.

    Science.gov (United States)

    Ilie, Nicoleta

    2017-08-01

    to determine the mode of light transmission and its impact on the polymerisation kinetic in modern bulk-fill resin-based composites (B-RBC). Four low-viscosity methacrylate-based and one high-viscosity ormocer-based B-RBCs were considered. One material was available in three different shades that were all analyzed. Polymerization kinetic and light transmittance were assessed in 2 and 4mm specimen depths. Incident and transmitted irradiance and radiant exposure were measured in real-time on a laboratory-grade spectrometer. A progressive enhanced light transmittance during polymerisation was identified in all materials except for TetricEvoFlow BulkFill, which became progressively opaque in all shades. One-way ANOVA and multivariate analysis (α=0.05) were performed. The parameter material has a significant (p0.95), differentiating between the gel- and the glass-phase and revealing a faster initiation of polymerization and a slower transition into the glass-phase by lowering the filler volume. Depth retarded the transition into the glass-phase, but did not alter DC measured 300s post-irradiation. Moderate inverse correlation was identified among DC and filler volume% (-0.646) or filler weight% (-0.403), while no correlation among DC and light transmittance (p=0.141; 0.125). The maximal rate of carbon-carbon double bond conversion varied within the analyzed materials but was independent from specimen's depths. Light transmission changes during polymerization do not alter polymerization kinetics in modern B-RBCs. DC 300s post-irradiation was maintained with depth, while light was attenuated, the faster the more translucent the material was. DC and quality of curing cannot be related to light transmittance in B-RBCs. Copyright © 2017 Elsevier Ltd. All rights reserved.

  8. Optimization of an acoustic telemetry array for detecting transmitter-implanted fish

    Science.gov (United States)

    Clements, S.; Jepsen, D.; Karnowski, M.; Schreck, C.B.

    2005-01-01

    The development of miniature acoustic transmitters and economical, robust automated receivers has enabled researchers to study the movement patterns and survival of teleosts in estuarine and ocean environments, including many species and age-classes that were previously considered too small for implantation. During 2001-2003, we optimized a receiver mooring system to minimize gear and data loss in areas where current action or wave action and acoustic noise are high. In addition, we conducted extensive tests to determine (1) the performance of a transmitter and receiver (Vemco, Ltd.) that are widely used, particularly in North America and Europe and (2) the optimal placement of receivers for recording the passage of fish past a point in a linear-flow environment. Our results suggest that in most locations the mooring system performs well with little loss of data; however, boat traffic remains a concern due to entanglement with the mooring system. We also found that the reception efficiency of the receivers depends largely on the method and location of deployment. In many cases, we observed a range of 0-100% reception efficiency (the percentage of known transmissions that are detected while the receiver is within range of the transmitter) when using a conventional method of mooring. The efficiency was improved by removal of the mounting bar and obstructions from the mooring line. ?? Copyright by the American Fisheries Society 2005.

  9. A dual-mode 6-9 GHz transmitter for OFDM-UWB

    Energy Technology Data Exchange (ETDEWEB)

    Chen Yunfeng; Gao Ting; Li Wei; Li Ning; Ren Junyan, E-mail: jyren@fudan.edu.cn, E-mail: w-li@fudan.edu.cn [State Key Laboratory of ASIC and System, Fudan University, Shanghai 201203 (China)

    2011-05-15

    This paper presents a fully integrated dual-mode 6 to 9 GHz transmitter for both WiMedia and China MB-OFDM UWB applications. The proposed transmitter consists of a dual-mode I/QLPF, an up-conversion mixer, a two-stage power driver amplifier and a broadband high-speed frequency divider with LO buffers for I/Q LO carrier generation. The measurement results show that the gain ripple of the transmitter is within {+-}1.5/{+-}2.8 dB from 6 to 8.7/9 GHz. The output IP3 is about +13.2 dBm, the output 1dBCP is around +2.8 dBm, and the LO leakage/sideband rejection ratio is about -35/-38 dBc. The ESD protected chip is fabricated with a TSMC 0.13 {mu}m RFCMOS process with a die size of 1.6 x 1.3 mm{sup 2} and the core circuit consumes only 46 mA under a 1.2 V supply. (semiconductor integrated circuits)

  10. Simultaneous determination of monoamine transmitters, precursors and metabolites in a single mouse brain.

    Science.gov (United States)

    Ishikawa, K; McGaugh, J L

    1982-04-16

    A simple and sensitive procedure for simultaneous determination of monoamine transmitters and related substances including precursors and metabolites has been developed for a single mouse brain. The proposed procedure involves (1) primary butanol extraction, (2) separation of the substances into either acid or alkaline aqueous layers according to their physicochemical properties, and (3) determination by means of high-performance liquid chromatography with electrochemical detection. Three transmitters (noradrenaline, dopamine and 5-hydroxytryptamine) and their precursors (tyrosine, 3,4-dihydroxyphenylalanine and tryptophan) and major metabolites (normethanephrine, 3-methoxy-4-hydroxyphenylethylene glycol, 3-methoxytyramine, 3,4-dihydroxyphenylacetic acid, 3-methoxy-4-hydroxyphenylacetic acid and 5-hydroxyindoleacetic acid) were selectively separated and sensitively detected in mouse whole brain sample. Although 3-methoxy-4-hydroxymandelic acid was also separated from other substances by authentic chromatography, the substance was not detected in mouse brain. Changes in levels of these substances were examined for drugs whose effects had been previously confirmed. These changes reflected putative effects of the drugs and confirmed that the procedure is effective for neurochemical research into the transmitter system.

  11. Configurable Transmitter and Systolic Channel Estimator Architectures for Data-Dependent Superimposed Training Communications Systems

    Directory of Open Access Journals (Sweden)

    E. Romero-Aguirre

    2012-01-01

    Full Text Available In this paper, a configurable superimposed training (ST/data-dependent ST (DDST transmitter and architecture based on array processors (APs for DDST channel estimation are presented. Both architectures, designed under full-hardware paradigm, were described using Verilog HDL, targeted in Xilinx Virtex-5 and they were compared with existent approaches. The synthesis results showed a FPGA slice consumption of 1% for the transmitter and 3% for the estimator with 160 and 115 MHz operating frequencies, respectively. The signal-to-quantization-noise ratio (SQNR performance of the transmitter is about 82 dB to support 4/16/64-QAM modulation. A Monte Carlo simulation demonstrates that the mean square error (MSE of the channel estimator implemented in hardware is practically the same as the one obtained with the floating-point golden model. The high performance and reduced hardware of the proposed architectures lead to the conclusion that the DDST concept can be applied in current communications standards.

  12. A New Position Location System Using DTV Transmitter Identification Watermark Signals

    Directory of Open Access Journals (Sweden)

    Chouinard Jean-Yves

    2006-01-01

    Full Text Available A new position location technique using the transmitter identification (TxID RF watermark in the digital TV (DTV signals is proposed in this paper. Conventional global positioning system (GPS usually does not work well inside buildings due to the high frequency and weak field strength of the signal. In contrast to the GPS, the DTV signals are received from transmitters at relatively short distance, while the broadcast transmitters operate at levels up to the megawatts effective radiated power (ERP. Also the RF frequency of the DTV signal is much lower than the GPS, which makes it easier for the signal to penetrate buildings and other objects. The proposed position location system based on DTV TxID signal is presented in this paper. Practical receiver implementation issues including nonideal correlation and synchronization are analyzed and discussed. Performance of the proposed technique is evaluated through Monte Carlo simulations and compared with other existing position location systems. Possible ways to improve the accuracy of the new position location system is discussed.

  13. Inequalities of caries experience in Nevada youth expressed by DMFT index vs. Significant Caries Index (SiC over time

    Directory of Open Access Journals (Sweden)

    Mobley Connie

    2011-04-01

    Full Text Available Abstract Background With the increasingly polarized distribution of dental caries among children and adolescents, the usual DMFT measure has become a less meaningful population descriptor. To re-focus on identifying the high caries prevalence group the Significant Caries Index (SiC was created. The aims of this study were to analyze the prevalence and severity of dental caries in Nevada youth over a period of eight years and to compare its expression by means of DMFT and SiC; analyze the caries trends in the population and their underlying factors, and determine whether Nevada youth were at risk for significantly high levels of dental caries. Methods Retrospective data was analyzed from a series of sequential, standardized oral health surveys across eight years (2001/2002-2008/2009 that included over 62,000 examinations of adolescents 13-19 years of age, attending public/private Nevada schools. Mean Decayed-Missing-Filled Teeth index (DMFT and Significant Caries Index (SiC were subsequently computed for each academic year. Descriptive statistics were reported for analysis of comparative DMFT and SiC scores in relation to age, gender, racial background, and residence in a fluoridated/non-fluoridated community. Logistic regression analysis was used to analyze the differential impact of the variables on the probability of being in the high caries prevalence group. Results Comparison of students' mean DMFT to National (NHANES data confirmed that dental caries remains a common chronic disease among Nevada youth, presenting higher prevalence rates and greater mean scores than the national averages. Downward trends were found across all demographics compared between survey years 1 and 6 with the exception of survey year 3. An upward trend began in survey year six. Over time, the younger group displayed an increasing proportion of cariesfree individuals while a decreasing proportion was found among older examinees. As expected, the mean SiC score was

  14. A standard operating procedure for the surgical implantation of transmitters in juvenile salmonids

    Science.gov (United States)

    Liedtke, T.L.; Beeman, J.W.; Gee, L.P.

    2012-01-01

    require large numbers of tagged fish. For example, a study conducted at the dams on the Columbia River and funded by the U.S. Army Corps of Engineers required tagging and monitoring of 40,000 juvenile salmon during a 3-month migration period (Counihan and others, 2006a, 2006b; Perry and others, 2006). To meet the demands of such a large study, the authors and CRRL staff refined the SOP to increase efficiency in the tagging process while maintaining high standards of fish care. The SOP has been used in laboratory and field settings for more than 15 years, and consistently has produced low mortality rates (hours after tagging. In addition to describing the detailed surgical procedures required for transmitter implantation, this document provides guidance on fish collection, handling and holding, and the release of tagged fish. Although often overlooked, or at least underemphasized, these processes can have a large impact on the outcome of the tagging procedure. Stress associated with the individual steps in handling and tagging can be cumulative and lethal (Maule and others, 1988; Wedemeyer and others, 1990; Portz and others, 2006), so the goal is to provide the best possible fish care at every step in order to manage the overall effect on study fish.

  15. A transportable hybrid antenna-transmitter system for the generation of elliptically polarized waves for NVIS propagation research

    NARCIS (Netherlands)

    Witvliet, Ben A.; Laanstra, Geert J.; van Maanen, Erik; Alsina-Pagès, Rosa M.; Bentum, Marinus Jan; Slump, Cornelis H.; Schiphorst, Roelof

    2016-01-01

    For empirical research on Near Vertical Incidence Skywave (NVIS) characteristic wave propagation, a beacon transmitter system is needed that can be programmed to emit precisely defined elliptically and circularly polarized waves at high elevation angles. This paper proposes a novel hybrid

  16. On Techniques to Characterize and Correlate Grain Size, Grain Boundary Orientation and the Strength of the SiC Layer of TRISO Coated Particles: A Preliminary Study

    Energy Technology Data Exchange (ETDEWEB)

    I.J.van Rooyen; J.L. Dunzik Gougar; T. Trowbridge; Philip M van Rooyen

    2012-10-01

    The mechanical properties of the silicon carbide (SiC) layer of the TRi-ISOtropic (TRISO) coated particle (CP) for high temperature gas reactors (HTGR) are performance parameters that have not yet been standardized by the international HTR community. Presented in this paper are the results of characterizing coated particles to reveal the effect of annealing temperature (1000 to 2100°C) on the strength and grain size of unirradiated coated particles. This work was further expanded to include possible relationships between the grain size and strength values. The comparative results of two strength measurement techniques and grain size measured by the Lineal intercept method are included. Preliminary grain boundary characterization results determined by electron backscatter diffraction (EBSD) are included. These results are also important for future fission product transport studies, as grain boundary diffusion is identified as a possible mechanism by which 110mAg, one of the fission activation products, might be released through intact SiC layers. Temperature is a parameter known to influence the grain size of SiC and therefore it is important to investigate the effect of high temperature annealing on the SiC grain size. Recommendations and future work will also be briefly discussed.

  17. Luminous transmittance and phase transition temperature of VO 2 ...

    African Journals Online (AJOL)

    The phase transition temperature (τc) of the films was obtained from both the transmittance and sheet resistance against temperature curves. A change in sheet resistance of 2 to 3 orders of magnitude was observed for both undoped and Ce-doped VO2 films. Comparison between undoped and doped VO2 films revealed ...

  18. Evaluation of acoustic transmitter implantation and determination of ...

    African Journals Online (AJOL)

    Largemouth bass Micropterus salmoides are an important angling species that are often displaced during catchand-release fishing tournaments. The impact of acoustic transmitter implantation on this species and the effect of displacement distance on their behaviour were tested. In April 2010, 10 fish with surgically ...

  19. Snake mortality associated with late season radio-transmitter implantation

    Science.gov (United States)

    D. Craig Rudolph; Shirley J. Burgdorf; Richard R. Schaefer; Richard N. Conner; Robert T. Zappalorth

    1998-01-01

    Radio-telemetry is an increasingly used procedure to obtain data on the biology of free-living snakes (Reinert 1992, 1994). In Texas and Louisiana we have been using the surgical technique of Weatherhead and Anderka (1984) to implant transmitters in timber rattlesnakes (Crotalus horridus) and Louisiana pine snakes (Pituophis melanoleucus...

  20. 47 CFR 73.1660 - Acceptability of broadcast transmitters.

    Science.gov (United States)

    2010-10-01

    ... 47 Telecommunication 4 2010-10-01 2010-10-01 false Acceptability of broadcast transmitters. 73.1660 Section 73.1660 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) BROADCAST RADIO SERVICES RADIO BROADCAST SERVICES Rules Applicable to All Broadcast Stations § 73.1660 Acceptability of...

  1. Order-sorting filter transmittance measured with an array detector

    Science.gov (United States)

    Heaney, James B.; Bradley, Scott E.; Bly, Vincent T.; Ewin, Audrey J.; La, Anh T.

    1993-08-01

    The simultaneous measurement of the spectrally and spatially variant transmittance of a linear variable order-sorting filter in a manner that closely resembles its conditions of actual use is described. The transmittance of a prototype order-sorting filter was measured in the 400- to 880-nm wavelength region by illuminating it with the output beam of a spectrophotometer while the filter was attached to the front of a 30 x 32 pixel silicon array detector. The filter was designed to be used in the output beam of a grating spectrometer to prevent the dispersal of higher diffracted orders onto an array detector. Areas of the filter that were spatially matched to the corresponding detector pixel column had measured peak transmittances of about 90 percent that were uniform to within +/- 1.5 percent along a given column. Transmittances for incident wavelengths shorter than the desired bandpass, corresponding to the order overlap region, were measured in the 0.003 range. Line spread function measurements made with the array detector indicated no significant beam spreading caused by inserting the filter into the beam.

  2. 47 CFR 73.685 - Transmitter location and antenna system.

    Science.gov (United States)

    2010-10-01

    ... antenna system. In the case of a composite antenna composed of two or more individual antennas, this means that the patterns for the composite antenna, not the patterns for each of the individual antennas, must... 47 Telecommunication 4 2010-10-01 2010-10-01 false Transmitter location and antenna system. 73.685...

  3. Ozone transmittance in a model atmosphere at Ikeja, Lagos state ...

    African Journals Online (AJOL)

    Variation of ozone transmittance with height in the atmosphere for radiation in the 9.6m absorption band was studied using Goody's model atmosphere, with cubic spline interpolation technique to improve the quality of the curve. The data comprising of pressure and temperature at different altitudes (0-22 km) for the month of ...

  4. Analysis of an Intelligent Temperature Transmitter for Process Control

    African Journals Online (AJOL)

    It also identifies low power microprocessor and analog to digital converters working with the basic sensor circuit as the key propellants in the advancement of transmitter technology. Despite several sensors available in the process control industry, the authors focus on temperature sensors and analyze a typical Rosemount ...

  5. Digital staining of pathological tissue specimens using spectral transmittance

    Science.gov (United States)

    Bautista, Pinky A.; Abe, Tokiya; Yamaguchi, Masahiro; Yagi, Yukako; Ohyama, Nagaaki

    2005-04-01

    Staining of tissue specimens is a classical procedure in pathological diagnosis to enhance the contrast between tissue components such that identification and classification of these components can be easily performed. In this paper, a framework for digital staining of pathological specimens using the information derived from the L-band spectral transmittance of various pathological tissue components is introduced, particularly the transformation of a Hematoxylin and Eosin (HE) stained specimen to its Masson-Trichrome (MT) stained counterpart. The digital staining framework involves the classification of tissue components, which are highlighted when the specimen is actually stained with MT stain, e.g. fibrosis, from the HE-stained image; and the linear mapping between specific sets of HE and MT stained transmittance spectra through pseudo-inverse procedure to produce the LxL transformation matrices that will be used to transform the HE stained transmittance to its equivalent MT stained transmittance configuration. To generate the digitally stained image, the decisions of multiple quadratic classifiers are pooled to form the weighting factors for the transformation matrices. Initial results of our experiments on liver specimens show the viability of multispectral imaging (MSI) for the implementation of digital staining in the pathological context.

  6. Spectral transmittance of the spectacle scale of snakes and geckos

    NARCIS (Netherlands)

    Doorn, van K.; Sivak, J.G.

    2015-01-01

    The spectral transmittance of the optical media of the eye plays a substantial role in tuning the spectrum of light available for capture by the retina. Certain squamate reptiles, including snakes and most geckos, shield their eyes beneath a layer of transparent, cornified skin called the

  7. Controlled crumpling of graphene oxide films for tunable optical transmittance.

    Science.gov (United States)

    Thomas, Abhay V; Andow, Brandon C; Suresh, Shravan; Eksik, Osman; Yin, Jie; Dyson, Anna H; Koratkar, Nikhil

    2015-06-03

    The delamination buckling approach provides a facile means to dynamically control the optical transmittance of extremely flexible and stretchable graphene oxide coatings with fast response time. Such graphene oxide coatings can be deposited by scalable solution-processing methods for potential applications in dynamic glazing. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. 47 CFR 97.313 - Transmitter power standards.

    Science.gov (United States)

    2010-10-01

    ....313 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND SPECIAL RADIO SERVICES... must use the minimum transmitter power necessary to carry out the desired communications. (b) No... an effective radiated power (ERP) exceeding 50 W PEP on the 60 m band. For the purpose of computing...

  9. 47 CFR 95.855 - Transmitter effective radiated power limitation.

    Science.gov (United States)

    2010-10-01

    .... 95.855 Section 95.855 Telecommunication FEDERAL COMMUNICATIONS COMMISSION (CONTINUED) SAFETY AND... Transmitter effective radiated power limitation. The effective radiated power (ERP) of each CTS and RTU shall be limited to the minimum necessary for successful communications. No CTS or fixed RTU may transmit...

  10. ALTERNATIVE METHOD FOR ON SITE EVALUATION OF THERMAL TRANSMITTANCE

    Directory of Open Access Journals (Sweden)

    Aleksandar Janković

    2017-08-01

    Full Text Available Thermal transmittance or U-value is an indicator of the building envelope thermal properties and a key parameter for evaluation of heat losses through the building elements due to heat transmission. It can be determined by calculation based on thermal characteristics of the building element layers. However, this value does not take into account the effects of irregularities and degradation of certain elements of the envelope caused by aging, which may lead to errors in calculation of the heat losses. An effective and simple method for determination of thermal transmittance is in situ measurement, which is governed by the ISO 9869-1:2014 that defines heat flow meter method. This relatively expensive method leaves marks and damages surface of the building element. Furthermore, the final result is not always reliable, in particular when the building element is light or when the weather conditions are not suitable. In order to avoid the above mentioned problems and to estimate the real thermal transmittance value an alternative experimental method, here referred as the natural convection and radiation method, is proposed in this paper. For determination of thermal transmittance, this method requires only temperatures of inside and outside air, as well as the inner wall surface temperature. A detailed statistical analysis, performed by the software package SPSS ver. 20, shows several more advantages of this method comparing to the standard heat flow meter one, besides economic and non-destructive benefits.

  11. A method for predicting the direct transmittance of atmospheric ...

    African Journals Online (AJOL)

    The trends in the variations of the two models are identical but the disparity in the magnitudes of the transmittances tends to widen with increasing value of air mass under the specified conditions, particularly for air masses 20. Appropriate reasons have been given for the observed differences. It is proposed that the ...

  12. Efficient and Compact Semiconductor Laser Transmitter Modules Project

    Data.gov (United States)

    National Aeronautics and Space Administration — Develop a Compact Transmitter Module (CTM) capable of operating at 1.26 5m, 1.57 5m and at 2 5m complete with all drive and control electronics for the TEC and the...

  13. analysis of an analysis of an intelligent temperature transmitter

    African Journals Online (AJOL)

    eobe

    analog to digital converters working with the basic sensor circuit as the key propellants in the advancement of transmitter technology. Despite several .... which include constrains in energy supply, storage capacity and bandwidth not to ... sine wave of digital signals which make up 1.2 KHz and 2.2 KHz, representing bits 1 ...

  14. Surgical insertion of transmitters and telemetry methods in fisheries research

    DEFF Research Database (Denmark)

    Rub, A. Michelle Wargo; Jepsen, Niels; Liedtke, Theresa L.

    2014-01-01

    ) will be described. Effects of surgical insertion of transmitters (ie, tagging) and aspects of the surgical implantation process where collaboration and professional exchanges among nonveterinarian researchers and veterinarians may be most fruitful will be discussed. Although this report focuses on surgical...

  15. 22 CFR 181.7 - Transmittal to the Congress.

    Science.gov (United States)

    2010-04-01

    ... Assistant Legal Adviser for Treaty Affairs to the Senate Committee on Foreign Affairs. ... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Transmittal to the Congress. 181.7 Section 181.7 Foreign Relations DEPARTMENT OF STATE INTERNATIONAL AGREEMENTS COORDINATION, REPORTING AND...

  16. 48 CFR 5.207 - Preparation and transmittal of synopses.

    Science.gov (United States)

    2010-10-01

    ... Preparation and transmittal of synopses. (a) Content. Each synopsis transmitted to the GPE must address the... of manufacture. (6) Quantity, including any options for additional quantities. (7) Unit of issue. (8...) If the technical data required to respond to the solicitation will not be furnished as part of such...

  17. A spectral method for retrieving cloud optical thickness and effective radius from surface-based transmittance measurements

    Directory of Open Access Journals (Sweden)

    P. J. McBride

    2011-07-01

    Full Text Available We introduce a new spectral method for the retrieval of optical thickness and effective radius from cloud transmittance that relies on the spectral slope of the normalized transmittance between 1565 nm and 1634 nm, and on cloud transmittance at a visible wavelength. The standard dual-wavelength technique, which is traditionally used in reflectance-based retrievals, is ill-suited for transmittance because it lacks sensitivity to effective radius, especially for optically thin clouds. Using the spectral slope rather than the transmittance itself enhances the sensitivity of transmittance observations with respect to the effective radius. This is demonstrated by applying it to the moderate spectral resolution observations from the Solar Spectral Flux Radiometer (SSFR and Shortwave Spectroradiometer (SWS, and by examining the retrieval uncertainties of the standard and the spectral method for data from the DOE ARM Southern Great Plains (SGP site and a NOAA ship cruise (ICEALOT. The liquid water path (LWP is derived from the retrieved optical thickness and effective radius, based on two different assumptions about the cloud vertical profile, and compared to the simultaneous observations from a microwave radiometer. Optical thickness and effective radius is also compared to MODIS retrievals. In general, the effective radius uncertainties were much larger for the standard retrieval than for the spectral retrieval, particularly for thin clouds. When defining 2 μm as upper limit for the tolerable uncertainty of the effective radius, the standard method returned only very few valid retrievals for clouds with an optical thickness below 25. For the analyzed ICEALOT data (mean optical thickness 23, the spectral method provided valid retrievals for 84 % of the data (24 % for the standard method. For the SGP data (mean optical thickness 44, both methods provided a high return of 90 % for the spectral method and 78 % for the standard method.

  18. Compósitos SiCf /SiC utilizados em sistemas de proteção térmica SiCf /SiC composites for thermal protection systems

    Directory of Open Access Journals (Sweden)

    M. Florian

    2005-09-01

    Full Text Available Compósitos de carbeto de silício (SiC reforçado com fibras de carbeto de silício (SiCf são materiais candidatos em potencial para utilização em sistemas de proteção térmica em altas temperaturas devido principalmente à boa condutividade térmica na direção da fibra e muito baixa condutividade térmica na direção transversal à fibra, alta dureza, estabilidade térmica e à corrosão por oxidação. O compósito SiCf/SiC possui uma matriz de SiC reforçada com fibras contínuas policristalinas de SiC e é obtido por reações de conversão em altas temperaturas e atmosfera controlada, utilizando o compósito carbono/carbono como precursor. O processo de Reação Química em Vapor (CVR foi utilizado para a fabricação de compósitos SiCf/SiC com alta pureza na fase de SiC-beta. O compósito precursor de carbono/carbono foi fabricado com fibra de carbono não estabilizada e matriz carbonosa derivada da resina fenólica na forma de carbono isotrópico. O compósito convertido exibiu uma densidade de 1,75 g/cm³, com 40% de porosidade aberta e resistência à flexão de 80 MPa medida por ensaio flexão em 4 pontos. A área especifica medida pela técnica de BET é dependente da temperatura de conversão e das condições inicias do precursor de carbono, podendo chegar a 18 m²/g.Composites based on silicon carbide are potential candidate materials for thermal protection systems mainly due to its good thermal conductivity in fiber direction and very low transversal thermal conductivity, high hardness, corrosion and thermal resistance. SiCf/SiC composite presents a SiC matrix reinforced with SiC polycrystalline continuous fibers. The composite was obtained by conversion reactions at high temperature and controlled atmosphere from a carbon/carbon composite precursor. The CVR process was used to fabricate SiC /SiC composite with crystalline high-purity beta-SiC from a carbon-carbon precursor fabricated with non-stabilized carbon fiber and

  19. Low Activation Joining of SiC/SiC Composites for Fusion Applications: Modeling Thermal and Irradiation-induced Swelling Effects on Integrity of Ti3SiC2/SiC Joint

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, Ba Nghiep; Henager, Charles H.; Kurtz, Richard J.; Ferraris, M.; Katoh, Yutai

    2017-03-31

    This work developed a continuum damage mechanics model that incorporates thermal expansion combined with irradiation-induced swelling effects to study the origin of cracking observed in recent irradiation experiments. Micromechanical modeling using an Eshelby-Mori-Tanaka approach was used to compute the thermoelastic properties of the Ti3SiC2/SiC joint needed for the model. In addition, a microstructural dual-phase Ti3SiC2/SiC model was developed to determine irradiation-induced swelling of the composite joint at a given temperature resulting from differential swelling of SiC and the Ti3SiC2 MAX phase. Three cases for the miniature torsion hourglass (THG) specimens containing a Ti3SiC2/SiC joint were analyzed corresponding to three irradiation temperatures: 800oC, 500oC, and 400oC.

  20. Transmitter Signal Measurements, Task 5C Report

    Science.gov (United States)

    Horton, Kent; Eppic, Brian; Huffman, Mitch; White, Harrison

    2005-01-01

    Signal Measurements were obtained on four (4) different airport systems. Systems measured were Localizer (LOC), Very High Frequency Communication, (VHF), Glideslope, (G/S), and Global Positioning System (GPS). The task calls for path loss measurements to be taken at Hartsfield-Jackson International Airport (ATL) and one smaller airport which was Greenville/ Spartanburg Airport (GSP) to determine relative signal strengths on the airport properties.

  1. Effects of ultrasonic vibration on microstructure and mechanical properties of nano-sized SiC particles reinforced Al-5Cu composites.

    Science.gov (United States)

    Li, Jianyu; Lü, Shulin; Wu, Shusen; Gao, Qi

    2018-04-01

    Ultrasonic vibration (UV) treatment has been successfully applied to improve the particles distribution of nano-sized SiC particles (SiC p ) reinforced Al-5Cu alloy matrix composites which were prepared by combined processes of dry high energy ball milling and squeeze casting. When UV treatment is applied, the distribution of nano-sized SiC p has been greatly improved. After UV for 1 min, large particles aggregates are broken up into small aggregates due to effects of cavitation and the acoustic streaming. After UV for 5 min, all the particles aggregates are dispersed and the particles are uniformly distributed in the composites. Compared with the Al-5Cu matrix alloy, the ultimate tensile strength, yield strength and elongation of the 1 wt% nano-sized SiC p /Al-5Cu composites treated by UV for 5 min are 270 MPa, 173 MPa and 13.3%, which are increased by 7.6%, 6.8% and 29%, respectively. The improvements of mechanical properties after UV are attributed to the uniform distribution of nano particles, grain refinement of aluminum matrix alloy and reduction of porosity in the composites. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. A Novel Method for Incorporation of Micron-Sized SiC Particles into Molten Pure Aluminum Utilizing a Co Coating

    Science.gov (United States)

    Mohammadpour, M.; Khosroshahi, R. Azari; Mousavian, R. Taherzadeh; Brabazon, D.

    2015-02-01

    Ceramic particles typically do not have sufficiently high wettability by molten metal for effective bonding during metal matrix composite fabrication. In this study, a novel method has been used to overcome this drawback. Micron-sized SiC particles were coated by a cobalt metallic layer using an electroless deposition method. A layer of cobalt on the SiC particles was produced prior to incorporation in molten pure aluminum in order to improve the injected particle bonding with the matrix. For comparison, magnesium was added to the melt in separate experiments as a wetting agent to assess which method was more effective for particle incorporation. It was found that both of these methods were more effective as regard ceramic particulate incorporation compared with samples produced with as-received SiC particles injected into the pure aluminum matrix. SEM images indicated that cobalt coating of the particles was more effective than magnesium for incorporation of fine SiC particles (below 30 µm), while totally the incorporation percentage of the particles was higher for a sample in which Mg was added as a wetting agent. In addition, microhardness tests revealed that the cobalt coating leads to the fabrication of a harder composite due to increased amount of ceramic incorporation, ceramic-matrix bonding, and possibly also to formation of Al-Co intermetallic phases.

  3. A theoretical study on the thermal oxidation of silicon carbide: Chemical species at the SiO2/SiC interface

    Science.gov (United States)

    Tajima, Nobuo; Kaneko, Tomoaki; Nara, Jun; Yamasaki, Takahiro; Schimizu, Tatsuo; Kato, Koichi; Ohno, Takahisa

    Silicon carbide (SiC) is potentially a suitable candidate of the channel materials of power devices since it has wide bandgap, high electron mobility, and thermal conductivity. Furthermore, it is favorable for device fabrication as it can be thermally oxidized to create insulating silicon oxide (SiO2) layer. However, the SiC devices of current technology do not show acceptable performance because of a defective nature of the created SiO2/SiC stacking structure, which causes problems such as channel mobility degradation, threshold voltage increase, and leakage current. The origins of the defective nature are not understood so far, though it is presumed that they are rather concentrated at the interface. In the present study, we have performed first principles calculations to know the chemical species possibly produced at the oxide interface of thermally oxidized SiC. The First principles simulation code PHASE/0 (http://www.ciss.iis.u-tokyo.ac.jp/riss/english/project/device/) was used in the theoretical calculations. A portion of this research was supported by the Grant from MEXT's project and carried out in partnership with the University of Tokyo.

  4. Spectral dynamics of 405 nm (Al,In)GaN laser diodes grown on GaN and SiC substrate.

    Science.gov (United States)

    Meyer, Tobias; Braun, Harald; Schwarz, Ulrich T; Tautz, Sönke; Schillgalies, Marc; Lutgen, Stephan; Strauss, Uwe

    2008-05-12

    We investigate the spectral properties of violet 405 nm (Al,In)GaN laser diodes (LDs). Depending on the substrate the LDs are grown on, the lasing spectra show significant differences. LDs grown on low dislocation GaN substrate have a broad spectrum with several longitudinal modes, while LDs grown on SiC substrate are lasing on a single longitudinal mode.With increasing current, the laser emission of LDs grown on SiC substrate jumps from one longitudinal mode to another (mode hopping), whereas GaN substrate LDs show a smooth but asymmetric mode comb. The different envelopes of these spectra can be understood by assuming a variation of the gain for each individual longitudinal mode. With a high spectral resolution setup, we measure the gain of each longitudinal mode, employing the Hakki-Paoli method. Measurements show a slightly fluctuating gain for the modes of GaN substrate LDs, but much larger fluctuations for LDs on SiC substrate. We carry out simulations of the longitudinal mode spectrum of (Al,In)GaN laser diodes using a rate equation model with nonlinear gain (self saturation, symmetric and asymmetric cross saturation) and including gain fluctuations. With a set of parameters which is largely identical for LDs on either substrate, the simulated spectra truly resemble those typical for LDs on GaN or SiC substrate.

  5. Albedo and transmittance of inhomogeneous stratus clouds

    Energy Technology Data Exchange (ETDEWEB)

    Zuev, V.E.; Kasyanov, E.I.; Titov, G.A. [Institute of Atmospheric Optics, Tomsk (Russian Federation)] [and others

    1996-04-01

    A highly important topic is the study of the relationship between the statistical parameters of optical and radiative charactertistics of inhomogeneous stratus clouds. This is important because the radiation codes of general circulation models need improvement, and it is important for geophysical information. A cascade model has been developed at the Goddard Space Flight Center to treat stratocumulus clouds with the simplest geometry and horizontal fluctuations of the liquid water path (optical thickness). The model evaluates the strength with which the stochastic geometry of clouds influences the statistical characteristics of albedo and the trnasmittance of solar radiation.

  6. Microestructura y propiedades mecánicas del SiC biomórfico obtenido a partir de eucalipto

    Directory of Open Access Journals (Sweden)

    Presas, M.

    2005-12-01

    Full Text Available The development of cellular ceramics with a biological structure, like bones and wood, has been a matter of interest in recent years. A low density highly interconnected structure, perfected by evolution, rises as the principal advantage of these materials. In the case of biomimetic SiC (biomorphic SiC, or bioSiC, the fabrication process technique is quite simple: a piece of wood is pyrolysed and is infiltrated with molten silicon after, the final product is a composite Si/SiC, which replicates the wood anisotropic microstructure This work focus on the mechanical properties of bioSiC fabricated using eucalyptus wood as precursor (hard wood with a bimodal channel distribution. It has been studied the mechanical behavior of this bioSiC (compression strength, flexure strength, fracture toughness and elastic modulus between 25 and 1350 oC. It is also discussed the relationship between mechanical behavior of the material and its microstructure.

    El desarrollo de materiales cerámicos con una estructura de tipo celular, similar a la del hueso o la madera, ha sido una cuestión que ha suscitado un gran interés en los últimos años. Su atractivo se debe al hecho de poseer una estructura porosa altamente interconectada de baja densidad, perfeccionada por la evolución. En el caso del SiC biomórfico (bio-SiC el proceso de fabricación es sencillo: se piroliza una pieza de madera y a continuación se inyecta con silicio líquido, el material así obtenido es un compuesto Si/SiC en el que el SiC mimetiza la estructura de la madera original. En este trabajo se estudian las propiedades mecánicas del SiC biomórfico fabricado a partir de eucalipto (madera dura con una distribución bimodal de poros. Se ha estudiado el comportamiento mecánico del mismo (resistencia a compresión, resistencia a flexión, tenacidad de fractura y módulo de elasticidad entre 25 y 1350 oC. Asimismo, se discute la relación entre el comportamiento mecánico del material y

  7. Effect of grain size on optical transmittance of birefringent polycrystalline ceramics

    Science.gov (United States)

    Wen, Tzu-Chien

    Polycrystalline ceramics are increasingly used for fabricating windows and domes for the mid infra-red regime (3-5 mum) due to their superior durability as compared to glass and the lower cost of their fabrication and finishing relative to single crystals without significant compromise in optical properties. Due to the noncubic structure, MgF2 and Al2O3 are birefringent ceramics. Birefringence causes scatter of light at the grain boundaries and diminishes in-line transmittance and optical performance. This dissertation presents experimental results and analyses of the grain-size and wavelength dependence of the in-line transmittance of polycrystalline MgF2 and Al2O3. Chapter 2 presents experimental results and analyses of light transmission in polycrystalline MgF2 as a function of the mean grain size at different wavelengths. The scattering coefficient of polycrystalline MgF 2 increased linearly with the mean grain size and inversely with the square of the wavelength of light. These trends are consistent with theoretical models based on both a limiting form of the Raleigh-Gans-Debye theory of particle scattering and light retardation theories that take refractive-index variations along the light path. Chapter 3 investigates the applicability of particle light scattering theories to light attenuation in birefringent polycrystalline ceramics by measuring light transmittance in a model two-phase system. The system consisted of microspheres of silica dispersed in a solution of glycerol in water. It was found that RGD theory showed the systematic deviation for higher particle volume fraction (φ > 0.2) and larger particle size (d p > 1 mum). This result suggested that light scattering models based on single particle scattering are unlikely to provide viable physical explanation for the effect of grain size on light transmittance in birefringent polycrystalline ceramics due to the high volume fraction in dense polycrystalline ceramics. Chapter 4 analyses light

  8. Synthesis of SiC from rice husk in a plasma reactor

    Indian Academy of Sciences (India)

    Abstract. A new route for production of SiC from rice husk is reported by employing thermal plasma technique. The formation of -SiC is observed in a short time of 5 min. The samples are characterized by XRD and SEM.

  9. Study of indentation induced cracks in MoSi2-reaction bonded SiC ...

    Indian Academy of Sciences (India)

    Unknown

    SiC ceramics. O P CHAKRABARTI*, P K DAS and S MONDAL. Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. MoSi2–RBSC composite samples were prepared by infiltration of Si–2 at.% Mo melt into a preform of commercial SiC and petroleum coke powder. The infiltrated sample had a ...

  10. Broadband Antireflection and Light Extraction Enhancement in Fluorescent SiC with Nanodome Structures

    DEFF Research Database (Denmark)

    Ou, Yiyu; Zhu, Xiaolong; Jokubavicius, Valdas

    2014-01-01

    We demonstrate a time-efficient and low-cost approach to fabricate Si3N4 coated nanodome structures in fluorescent SiC. Nanosphere lithography is used as the nanopatterning method and SiC nanodome structures with Si3N4 coating are formed via dry etching and thin film deposition process. By using...

  11. 10kV SiC MOSFET split output power module

    DEFF Research Database (Denmark)

    Beczkowski, Szymon; Li, Helong; Uhrenfeldt, Christian

    2015-01-01

    The poor body diode performance of the first generation of 10kV SiC MOSFETs and the parasitic turn-on phenomenon limit the performance of SiC based converters. Both these problems can potentially be mitigated using a split output topology. In this paper we present a comparison between a classical...

  12. Using of the Modern Semiconductor Devices Based on the SiC

    Directory of Open Access Journals (Sweden)

    Pavel Drabek

    2008-01-01

    Full Text Available This paper deals with possibility of application of the semiconductor devices based on the SiC (Silicon Carbide inthe power electronics. Basic synopsis of SiC based materials problems are presented, appreciation of their properties incomparison with current using power semiconductor devices ((IGBT, MOSFET, CoolFET transistors.

  13. Development of Simulink-Based SiC MOSFET Modeling Platform for Series Connected Devices

    DEFF Research Database (Denmark)

    Tsolaridis, Georgios; Ilves, Kalle; Reigosa, Paula Diaz

    2016-01-01

    A new MATLAB/Simulink-based modeling platform has been developed for SiC MOSFET power modules. The modeling platform describes the electrical behavior f a single 1.2 kV/ 350 A SiC MOSFET power module, as well as the series connection of two of them. A fast parameter initialization is followed...

  14. Coupled data transmission and indoor positioning by using transmitting trichromatic white LEDs and a SiC optical MUX/DEMUX mobile receiver

    Science.gov (United States)

    Vieira, M.; Vieira, M. A.; Vieira, P.; Louro, P.

    2017-05-01

    In this paper, we present an indoor positioning system were trichromatic white LEDs are used both for illumination proposes and as transmitters, and an MUX/DEMUX device, based on a-SiC:H technology, is used as the mobile receiver. OOK modulation scheme was used, and it provides a good trade-off between system performance and implementation complexity. The receiver is implemented using a double p-i-n/pin SiC photodetector with light filtering properties. The relationship between the optical inputs (transmitted data) and the associated digital output levels (received data) is established and decoded. Two topologies are used and tested as lighting plans: the square and the triangular. The key differences between both topologies are discussed in the following. The received signal is used in coded multiplexing techniques for supporting communications and navigation concomitantly on the same channel. The position of the device is estimated using the visible multilateration method by measuring the strength of the MUX signal from several non-collinear transmitters. The location and motion information is calculated by position mapping and estimating the location areas. For both topologies, the transmitted data information, indoor position and motion direction of the mobile device are determined. Data analysis showed that by using a pinpin double photodiode based on a a-SiC:H heterostucture as receiver, and RBGLEDs as transmitters it is possible not only to determine the mobile target's position but also to infer the motion direction over time, along with the received information in each position.

  15. A 5 Gb/s low power current-mode transmitter with pre-emphasis for serial links

    Science.gov (United States)

    Junsheng, Lü; Hao, Ju; Mao, Ye; Feng, Zhang; Jianzhong, Zhao; Yumei, Zhou

    2013-07-01

    A multi-standard compatible transmitter with pre-emphasis for high speed serial links is presented. Based on the comparison between voltage mode (VM) and current mode (CM) output driver architectures, a low power CM output driver with reverse scaling and bias current filtering technique is proposed. A 2-tap pre-emphasis filter is used to reduce the intersymbol interference caused by the low-pass channel, and a high speed, low power combined serializer is implemented to convert 10 bit parallel data into a serial data stream. The whole transmitter is fabricated in 65 nm 1.2 V/2.5 V CMOS technology. It provides an eye height greater than 800 mV for data rates of both 2.5 Gb/s and 5 Gb/s. The output root mean square jitter of the transmitter at 5 Gb/s is only 9.94 ps without pre-emphasis. The transmitter consumes 41.2 mA at 5 Gb/s and occupies only 240 × 140 μm2.

  16. Interaction between magnetic moments and itinerant carriers in d0 ferromagnetic SiC

    Science.gov (United States)

    Liu, Yu; Yuan, Ye; Liu, Fang; Böttger, Roman; Anwand, Wolfgang; Wang, Yutian; Semisalova, Anna; Ponomaryov, Alexey N.; Lu, Xia; N'Diaye, Alpha T.; Arenholz, Elke; Heera, Viton; Skorupa, Wolfgang; Helm, Manfred; Zhou, Shengqiang

    2017-05-01

    Elucidating the interaction between magnetic moments and itinerant carriers is an important step to spintronic applications. Here, we investigate magnetic and transport properties in d0 ferromagnetic SiC single crystals prepared by postimplantation pulsed laser annealing. Magnetic moments are contributed by the p states of carbon atoms, but their magnetic circular dichroism is different from that in semi-insulating SiC samples. The anomalous Hall effect and negative magnetoresistance indicate the influence of d0 spin order on free carriers. The ferromagnetism is relatively weak in N-implanted SiC compared with that in Al-implanted SiC after annealing. The results suggest that d0 magnetic moments and itinerant carriers can interact with each other, which will facilitate the development of SiC spintronic devices with d0 ferromagnetism.

  17. The influence of carbon on the structure of preceramic polymer derived SiC

    Energy Technology Data Exchange (ETDEWEB)

    Kolaya, L.E.; Lewis, N. [Lockheed Martin Corp., Schenectady, NY (United States)

    1997-01-01

    The microstructure of SiC produced from allyl-hydridopolycarbosilane (AHPCS) was studied after thermal treatments at temperatures up to 1600 C. SiC samples were prepared in contact with pyrocarbon, carbon fiber, carbon felt, carbon powder, and graphite. Each of these configurations was examined using optical, scanning electron, and transmission electron microscopy. The resultant microstructure of the SiC in the vicinity of the carbon/graphite source was different for each sample. In some cases the grains were uniform, equiaxed and about the same size as SiC grains derived from neat AHPCS. Other samples exhibited accelerated grain growth in the vicinity of the carbon, and occasionally appeared to mimic the original carbon structure. Understanding and controlling such behavior will facilitate the fabrication of polymer derived stoichiometric SiC, and also has significant implications for the fabrication of SiC/SiC composites with a pyrocarbon interface and polymer derived matrix.

  18. A Short-Circuit Safe Operation Area Identification Criterion for SiC MOSFET Power Modules

    DEFF Research Database (Denmark)

    Reigosa, Paula Diaz; Iannuzzo, Francesco; Luo, Haoze

    2017-01-01

    This paper proposes a new method for the investigation of the short-circuit safe operation area (SCSOA) of state-of-the-art SiC MOSFET power modules rated at 1.2 kV based on the variations in SiC MOSFET electrical parameters (e.g., short-circuit current and gate–source voltage). According......-circuit-current-based criterion; and 2) the gate-voltage-based criterion. The applicability of these two criteria makes possible the SCSOA evaluation of SiC MOSFETs with some safety margins in order to avoid unnecessary failures during their SCSOA characterization. SiC MOSFET power modules from two different manufacturers...... are experimentally tested in order to demonstrate the procedure of the method. The obtained results can be used to have a better insight of the SCSOA of SiC MOSFETs and their physical limits....

  19. Cohort profile: the Social Inequality in Cancer (SIC) cohort study.

    Science.gov (United States)

    Nordahl, Helene; Hvidtfeldt, Ulla Arthur; Diderichsen, Finn; Rod, Naja Hulvej; Osler, Merete; Frederiksen, Birgitte Lidegaard; Prescott, Eva; Tjønneland, Anne; Lange, Theis; Keiding, Niels; Andersen, Per Kragh; Andersen, Ingelise

    2014-12-01

    The Social Inequality in Cancer (SIC) cohort study was established to determine pathways through which socioeconomic position affects morbidity and mortality, in particular common subtypes of cancer. Data from seven well-established cohort studies from Denmark were pooled. Combining these cohorts provided a unique opportunity to generate a large study population with long follow-up and sufficient statistical power to develop and apply new methods for quantification of the two basic mechanisms underlying social inequalities in cancer-mediation and interaction. The SIC cohort included 83 006 participants aged 20-98 years at baseline. A wide range of behavioural and biological risk factors such as smoking, physical inactivity, alcohol intake, hormone replacement therapy, body mass index, blood pressure and serum cholesterol were assessed by self-administered questionnaires, physical examinations and blood samples. All participants were followed up in nationwide demographic and healthcare registries. For those interested in collaboration, further details can be obtained by contacting the Steering Committee at the Department of Public Health, University of Copenhagen, at inan@sund.ku.dk. © The Author 2014; all rights reserved. Published by Oxford University Press on behalf of the International Epidemiological Association.

  20. Integrated photonic filters based on SiC multilayer structures

    Energy Technology Data Exchange (ETDEWEB)

    Vieira, M.A., E-mail: mv@isel.ipl.pt [Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014, Lisboa (Portugal); CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica (Portugal); Vieira, M. [Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014, Lisboa (Portugal); CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica (Portugal); DEE-FCT-UNL, Quinta da Torre, Monte da Caparica, 2829-516, Caparica (Portugal); Louro, P.; Silva, V.; Fantoni, A. [Electronics Telecommunication and Computer Dept. ISEL, R. Conselheiro Emídio Navarro, 1949-014, Lisboa (Portugal); CTS-UNINOVA, Quinta da Torre, Monte da Caparica, 2829-516, Caparica (Portugal)

    2013-06-15

    Combined tunable WDM converters based on SiC multilayer photonic active filters are analyzed. The operation combines the properties of active long-pass and short-pass wavelength filter sections into a capacitive active band-pass filter. The sensor element is a multilayered heterostructure produced by PE-CVD. The configuration includes two stacked SiC p–i–n structures sandwiched between two transparent contacts. Transfer function characteristics are studied both theoretically and experimentally. Results show that optical bias activated photonic device combines the demultiplexing operation with the simultaneous photodetection and self amplification of an optical signal acting the device as an integrated photonic filter in the visible range. Depending on the wavelength of the external background and irradiation side, the device acts either as a short- or a long-pass band filter or as a band-stop filter. The output waveform presents a nonlinear amplitude-dependent response to the wavelengths of the input channels. A numerical simulation and a two building-blocks active circuit are presented and give insight into the physics of the device.

  1. Crucial effect of SiC particles on in situ synthesized mullite whisker reinforced Al2O3-SiC composite during microwave sintering

    Directory of Open Access Journals (Sweden)

    Meng Wei

    2017-06-01

    Full Text Available Mullite whisker reinforced Al2O3-SiC composites were in situ synthesized by microwave sintering at 1500°C for 30min. The influence of SiC particle size on heating process and properties of Al2O3-SiC composite were investigated. The XRD and SEM techniques were carried out to characterize the samples. The thermal shock resistance and flexural strength of the samples were examined through water quenching and three-point bending methods, respectively. It was found that the bridging of mullite whisker appeared between Al2O3 and SiC particles which enhanced the thermal shock resistance. A so-called local hot spot effect was proposed dependent on the coupling of SiC particles with microwave, which was the unique feature of microwave sintering. The maximal thermal shock resistance and flexural strength were obtained for the samples with SiC particle size of ~5μm.

  2. Residual stresses and mechanical properties of Si3N4/SiC multilayered composites with different SiC layers

    Directory of Open Access Journals (Sweden)

    Shichao Liu

    2017-07-01

    Full Text Available The effect of residual stresses on the strength, toughness and work of fracture of Si3N4/SiC multilayered composites with different SiC layers has been investigated. It may be an effective way to design and optimize the mechanical properties of Si3N4/SiC multilayered composites by controlling the properties of SiC layers. Si3N4/SiC multilayered composites with different SiC layers were fabricated by aqueous tape casting and pressureless sintering. Residual stresses were calculated by using ANSYS simulation, the maximum values of tensile and compressive stresses were 553.2 MPa and −552.1 MPa, respectively. Step-like fracture was observed from the fracture surfaces. Fraction of delamination layers increased with the residual stress, which can improve the reliability of the materials. Tensile residual stress was benefit to improving toughness and work of fracture, but the strength of the composites decreased.

  3. Enhanced Compressive Strength of Nanostructured Aluminum Reinforced with SiC Nanoparticles and Investigation of Strengthening Mechanisms and Fracture Behavior

    Science.gov (United States)

    Akbarpour, M. R.; Torknik, F. S.; Manafi, S. A.

    2017-10-01

    In this study, microstructure and mechanical properties of nanostructured Al and Al reinforced with different volume fractions of SiC nanoparticles fabricated through a powder metallurgy route, including high-energy mechanical milling and hot pressing method, were examined. Nanostructured Al and the Al-8 vol.%SiC nanocomposite showed superior compressive strength of ≈300 and ≈412 MPa, respectively, with reasonable ductility. The high strength of the nanocomposite was attributed to the reduced grain size of the Al matrix and homogeneous dispersion of the nanoparticles in the matrix. The effects of nanoparticles on strengthening of Al and fracture mechanisms are presented and discussed.

  4. Examining of abrasion resistance of hybrid composites reinforced with SiC and Cgr particles

    Directory of Open Access Journals (Sweden)

    M. Łągiewka

    2008-08-01

    Full Text Available The presented work discusses the influence of the type and volume percentage of particulate reinforcement consisting of mixed silicon carbide and graphite on the abrasion wear of hybrid composites with AlMg10 matrix. Also the macro photos of frictional surfaces have been shown and the results of hardness measurements have been presented. The performed examinations have allowed for stating that the mixture of SiC and Cgr particles changes in favour the tribological properties of the matrix alloy. It has been also proved that introducing hard reinforcing particles along with soft lubricating ones allows for achieving the material exhibiting high abrasion resistance, and moreover, the graphite particles protect the abraded surface from the destructive action of silicon carbide particles. Also hardness measurements have been performed and the resulting conclusion is that the composite hardness increases with an increase in volume fraction of the reinforcing particles.

  5. Graphene etching on SiC grains as a path to interstellar polycyclic aromatic hydrocarbons formation.

    Science.gov (United States)

    Merino, P; Švec, M; Martinez, J I; Jelinek, P; Lacovig, P; Dalmiglio, M; Lizzit, S; Soukiassian, P; Cernicharo, J; Martin-Gago, J A

    2014-01-01

    Polycyclic aromatic hydrocarbons as well as other organic molecules appear among the most abundant observed species in interstellar space and are key molecules to understanding the prebiotic roots of life. However, their existence and abundance in space remain a puzzle. Here we present a new top-down route to form polycyclic aromatic hydrocarbons in large quantities in space. We show that aromatic species can be efficiently formed on the graphitized surface of the abundant silicon carbide stardust on exposure to atomic hydrogen under pressure and temperature conditions analogous to those of the interstellar medium. To this aim, we mimic the circumstellar environment using ultra-high vacuum chambers and investigate the SiC surface by in situ advanced characterization techniques combined with first-principles molecular dynamics calculations. These results suggest that top-down routes are crucial to astrochemistry to explain the abundance of organic species and to uncover the origin of unidentified infrared emission features from advanced observations.

  6. Comparison of the Tensile, Creep, and Rupture Strength Properties of Stoichiometric SiC Fibers

    Science.gov (United States)

    Yun, H. M.; DiCarlo, J. A.

    1999-01-01

    Tensile strength, creep strength, and rupture strength properties were measured for the following types of polymer-derived stoichiometric SiC fibers: Hi-Nicalon Type S from Nippon Carbon, Tyranno SA from Ube, and Sylramic from Dow Corning. Also included in this study were an earlier version of the SA fiber plus two recent developmental versions of the Sylramic fiber. The tensile strength measurements were made at room temperature on as-received fibers and on fibers after high-temperature inert exposure. The creep-rupture property data were obtained at 1400 deg C in air as well as, argon. Some fiber types showed strong effects of environment on their strength properties. These results are compared and discussed in terms of underlying mechanisms and implications for ceramic composites.

  7. Effect of SiC particle addition on microstructure of Mg2Si/Al composite

    Directory of Open Access Journals (Sweden)

    Zhao Yuguang

    2014-03-01

    Full Text Available In the present study, by adding SiC particles into Al-Si-Mg melt, Mg2Si and SiC particles hybrid reinforced Al matrix composites were fabricated through the Mg2Si in situ synthesis in melt combined with the SiC ex situ stir casting. The as-cast microstructure containing primary Mg2Si and SiC particles that distribute homogenously in Al matrix was successfully achieved. The effects of SiC particle addition on the microstructure of Mg2Si/Al composites were investigated by using scanning electron microscopy (SEM and XRD. The results show that, with increasing the fraction of the SiC particles from 5wt.% to 10wt.%, the morphologies of the primary Mg2Si particulates in the prepared samples remain polygonal, but the size of the primary phase decreases slightly. However, when the SiC particle addition reaches 15wt.%, the morphologies of the primary Mg2Si particulates change partially from polygonal to quadrangular with a decrease in size from 50 μm to 30 μm. The size of primary Al dendrites decreases with increasing fraction of the SiC particles from 0wt.% to 15wt.%. The morphology of the eutectic Mg2Si phase changes from a fiber-form to a short fiber-form and/or a dot-like shape with increasing fraction of the SiC particles. Furthermore, no significant change in dendrite arm spacing (DAS was observed in the presence of SiC particles.

  8. Low dose irradiation performance of SiC interphase SiC/SiC composites

    Science.gov (United States)

    Snead, L. L.; Osborne, M. C.; Lowden, R. A.; Strizak, J.; Shinavski, R. J.; More, K. L.; Eatherly, W. S.; Bailey, J.; Williams, A. M.

    1998-03-01

    Reduced oxygen Hi-Nicalon™ fiber reinforced composite SiC materials were densified with a chemically vapor infiltrated (CVI) silicon carbide (SiC) matrix and interphases of either `porous' SiC or multilayer SiC and irradiated to a neutron fluence of 1.1×10 25 n m -2 ( E>0.1 MeV) in the temperature range of 260 to 1060°C. The unirradiated properties of these composites are superior to previously studied ceramic grade Nicalon fiber reinforced/carbon interphase materials. Negligible reduction in the macroscopic matrix microcracking stress was observed after irradiation for the multilayer SiC interphase material and a slight reduction in matrix microcracking stress was observed for the composite with porous SiC interphase. The reduction in strength for the porous SiC interfacial material is greatest for the highest irradiation temperature. The ultimate fracture stress (in four point bending) following irradiation for the multilayer SiC and porous SiC interphase materials was reduced by 15% and 30%, respectively, which is an improvement over the 40% reduction suffered by irradiated ceramic grade Nicalon fiber materials fabricated in a similar fashion, though with a carbon interphase. The degradation of the mechanical properties of these composites is analyzed by comparison with the irradiation behavior of bare Hi-Nicalon fiber and Morton chemically vapor deposited (CVD) SiC. It is concluded that the degradation of these composites, as with the previous generation ceramic grade Nicalon fiber materials, is dominated by interfacial effects, though the overall degradation of fiber and hence composite is reduced for the newer low-oxygen fiber.

  9. Propiedades mecánicas de SiC biomórfico poroso

    Directory of Open Access Journals (Sweden)

    López Robledo, M. J.

    2005-10-01

    Full Text Available Biomorphic SiC (bioSiC materials fabricated by silicon infiltration of chescoal preforms have been studied. As a result of this process, a porous SiC ceramics with remnant silicon partially filling pores is obtained. This remnant silicon can considerably alter the mechanical properties of the bioSiC but it can be effectively removed by reaction with a mixture of HF and HNO3 producing a clean pororus bioSiC. In this work the comparison of the mechanical properties of bioSiC from preforms of beech, eucalyptus and pine, with and without remanent silicon is studied. High temperature mechanical properties were studied from deformation tests in compression at constant strain rate. Microstructural characterization of the samples, before and after the mechanical tests, was performed by scanning electron microscopy (SEM.

    Se han estudiado carburos de silicio biomórficos (bioSiC fabricados mediante infiltración reactiva de silicio líquido en una preforma de carbón de origen vegetal. Se obtiene así una cerámica porosa de SiC con silicio remanente en sus poros. Este silicio puede alterar considerablemente las propiedades mecánicas de los bioSiC. Este trabajo preliminar se centra en el estudio de las propiedades mecánicas de los bioSiC fabricados a partir de preformas de haya, eucalipto y pino, tras reacción con una disolución de HF y HNO3 que elimina ostensiblemente el silicio residual. Las propiedades mecánicas a altas temperaturas fueron estudiadas a partir de ensayos de compresión a velocidad de deformación constante. La caracterización microestructural del material resultante, antes y después de los ensayos mecánicos, fue realizada mediante Microscopía Electrónica de Barrido (MEB.

  10. 77 FR 28668 - Technical Standard Order (TSO)-C91a, Emergency Locator Transmitters (ELTs)

    Science.gov (United States)

    2012-05-15

    ... Technical Standard Order (TSO)-C91a, Emergency Locator Transmitter (ELT) Equipment. SUMMARY: This notice announces the FAA's cancellation of TSO-C91a, Emergency Locator Transmitter (ELT) Equipment. The effect of... December 1, 2012, must seek authorization for TSO-C126a, 406 MHz Emergency Locator Transmitter (ELT), or...

  11. All polymer chip for amperometric studies of transmitter release from large groups of neuronal cells

    DEFF Research Database (Denmark)

    Larsen, Simon T.; Taboryski, Rafael

    2012-01-01

    -induced release of transmitter molecules. The nature of the resulting current peaks is discussed, and the time for restoring transmitter reservoirs is studied. The relationship between released transmitters and potassium concentration was found to fit to a sigmoidal dose–response curve. Finally, we demonstrate...

  12. Effects of radio transmitters on the behavior of Red-headed Woodpeckers

    Science.gov (United States)

    Mark Vukovich; John C. Kilgo

    2009-01-01

    Previous studies have revealed that radio-transmitters may affect bird behaviors, including feeding rates, foraging behavior, vigilance, and preening behavior. In addition, depending on the method of attachment, transmitters can potentially affect the ability of cavity-nesting birds to use cavities. Our objective was to evaluate effects of transmitters on the behavior...

  13. Cylindrical PVDF film transmitters and receivers for air ultrasound.

    Science.gov (United States)

    Toda, Minoru

    2002-05-01

    Cylindrical polyvinylidene fluoride (PVDF) film transducers for transmission and reception of 40-kHz ultrasonic waves in air have been investigated. A key feature of such transducers is their omni-directional polar response. An optimized structure comprises a cylindrical PVDF film element resting on a spool without a mechanical bond to it. Various key design equations to obtain the required ultrasonic performance both as transmitter and receiver are shown, which include resonance frequency, acoustic pressure, angle performance, back air cavity effect, and receiver sensitivity. Measurements of actual frequency response of transmitter output and receiver sensitivity, angular performance, back air space effect, and temperature effect are presented. The results agree well with the theoretical predictions. It has been shown that this device is well-suited for practical application as an ultrasonic ranging device.

  14. Active coatings for SiC particles to reduce the degradation by liquid aluminium during processing of aluminium matrix composites: study of interfacial reactions.

    Science.gov (United States)

    Ureña, A.; Rodrigo, P.; Baldonedo, J. L.; Gil, L.

    2001-02-01

    The application of a surface coating on SiC particles is studied as an alternative means of solving problems of reactivity between SiC reinforcements and molten aluminium and problems of low wetting which limit the application of casting routes for fabrication of Al-SiCp composites. The selected active barrier was a ceramic composed of SiO2, which was generated by controlled oxidation of the SiC particles. The coating behaves as an active barrier, preventing a direct reaction between molten aluminium and SiC to form Al4C3 as the main degradation product. At the same time, the SiO2 provokes other interfacial reactions, which are responsible for an improvement in wetting behaviour. Composites were prepared by mixing and compacting SiC particles with Al powders followed by melting in a vacuum furnace, and varying the residence time. Transmission electron microscopy (TEM), high resolution electron microscopy (HREM) and field emission TEM were employed as the main characterization techniques to study the interfacial reactions occurring between the barrier and the molten aluminium. These studies showed that the SiO2 coating behaves as an active barrier which reacts with the molten Al to form a glassy phase Al-Si-O. This compound underwent partial crystallization during the composite manufacture to form mullite. The formation of an outer crystalline layer, composed mainly of Al2O3, was also detected. Participation of other secondary interface reactions inside the active barrier was also identified by HREM techniques.

  15. EUROPIUM s-PROCESS SIGNATURE AT CLOSE-TO-SOLAR METALLICITY IN STARDUST SiC GRAINS FROM ASYMPTOTIC GIANT BRANCH STARS

    Energy Technology Data Exchange (ETDEWEB)

    Avila, Janaina N.; Ireland, Trevor R.; Holden, Peter [Research School of Earth Sciences, Australian National University, Canberra ACT 0200 (Australia); Lugaro, Maria [Monash Centre for Astrophysics, Monash University, Clayton, VIC 3800 (Australia); Gyngard, Frank; Zinner, Ernst [Laboratory for Space Sciences and the Department of Physics, Washington University, One Brookings Drive, St. Louis, MO 63130 (United States); Cristallo, Sergio [Osservatorio Astronomico di Collurania, INAF, via Maggini snc, Teramo I-64100 (Italy); Rauscher, Thomas, E-mail: janaina.avila@anu.edu.au [Centre for Astrophysics Research, School of Physics, Astronomy, and Mathematics, University of Hertfordshire, Hatfield AL10 9AB (United Kingdom)

    2013-05-01

    Individual mainstream stardust silicon carbide (SiC) grains and a SiC-enriched bulk sample from the Murchison carbonaceous meteorite have been analyzed by the Sensitive High Resolution Ion Microprobe-Reverse Geometry for Eu isotopes. The mainstream grains are believed to have condensed in the outflows of {approx}1.5-3 M{sub Sun} carbon-rich asymptotic giant branch (AGB) stars with close-to-solar metallicity. The {sup 151}Eu fractions [fr({sup 151}Eu) = {sup 151}Eu/({sup 151}Eu+{sup 153}Eu)] derived from our measurements are compared with previous astronomical observations of carbon-enhanced metal-poor stars enriched in elements made by slow neutron captures (the s-process). Despite the difference in metallicity between the parent stars of the grains and the metal-poor stars, the fr({sup 151}Eu) values derived from our measurements agree well with fr({sup 151}Eu) values derived from astronomical observations. We have also compared the SiC data with theoretical predictions of the evolution of Eu isotopic ratios in the envelope of AGB stars. Because of the low Eu abundances in the SiC grains, the fr({sup 151}Eu) values derived from our measurements show large uncertainties, in most cases being larger than the difference between solar and predicted fr({sup 151}Eu) values. The SiC aggregate yields a fr({sup 151}Eu) value within the range observed in the single grains and provides a more precise result (fr({sup 151}Eu) = 0.54 {+-} 0.03, 95% conf.), but is approximately 12% higher than current s-process predictions. The AGB models can match the SiC data if we use an improved formalism to evaluate the contribution of excited nuclear states in the calculation of the {sup 151}Sm(n, {gamma}) stellar reaction rate.

  16. System for Isolation Testing of RF Transmitters and Receivers

    Science.gov (United States)

    2012-08-03

    memory 30B. [0018] Programmable device 30 can be based on a software defined radio ( SDR ) configured to operate as described herein. By way of example...one such software defined radio is the open source GNU radio platform utilizing the Universal Software Radio Peripheral. [0019] The advantages of...to a system that can perform isolation testing of a radio frequency (RF) transmitter or an RF receiver. (2) Description of the Prior Art [0004

  17. Laser Transmitters for the optical link systems used in CMS

    CERN Multimedia

    Maximilien Brice

    2005-01-01

    In the CMS experiment of the now new flagship LHC optical links will be used for the tracker readout system. One part of this components will be semiconductor laser (~50.000 !!!), named correctly: 1310 nm InGaAsP (DCPBH-MQW) edge-emitting laser. They are foreseen as transmitter in the Tx Hybrid part of the optical link system.

  18. Temperature Dependence of Light Transmittance in Polymer Dispersed Liquid Crystals

    OpenAIRE

    Bloisi, F.; Ruocchio, C.; Vicari, L

    1997-01-01

    Polymer Dispersed Liquid Crystals (PDLC) axe composite materials made of a dispersion of liquid crystal droplets in a polymeric matrix. When the liquid crystal is in the nematic phase, droplets appeax as optically anisotropic spheres and the material is opaque white. Sample transmittance is a function of the temperature. If the liquid crystal refractive index in the isotropic phase is equal to the one of the polymer, after the nematic-isotropic transition the material is transparent. We prese...

  19. Effects of satellite transmitters on captive and wild mallards

    Science.gov (United States)

    Kesler, Dylan C.; Raedeke, Andrew H.; Foggia, Jennifer R.; Beatty, William S.; Webb, Elisabeth B.; Humburg, Dale D.; Naylor, Luke W.

    2014-01-01

    Satellite telemetry has become a leading method for studying large-scale movements and survival in birds, yet few have addressed potential effects of the larger and heavier tracking equipment on study subjects. We simultaneously evaluated effects of satellite telemetry equipment on captive and wild mallards (Anas platyrhynchos) to assess impacts on behavior, body mass, and movement. We randomly assigned 55 captive ducks to one of 3 treatment groups, including a standard body harness group, a modified harness group, and a control group. Ducks in the control group were not fitted with equipment, whereas individuals in the other 2 groups were fitted with dummy transmitters attached with a Teflon ribbon harness or with a similar harness constructed of nylon cord. At the conclusion of the 14-week captive study, mean body mass of birds in the control group was 40–105 g (95% CI) greater than birds with standard harnesses, and 28–99 g (95% CI) greater than birds with modified harnesses. Further, results of focal behavior observations indicated ducks with transmitters were less likely to be in water than control birds. We also tested whether movements of wild birds marked with a similar Teflon harness satellite transmitter aligned with population movements reported by on-the-ground observers who indexed local abundances of mid-continent mallards throughout the non-breeding period. Results indicated birds marked with satellite transmitters moved concurrently with the larger unmarked population. Our results have broad implications for field research and suggest that investigators should consider potential for physiological and behavioral effects brought about by tracking equipment. Nonetheless, results from wild ducks indicate satellite telemetry has the potential to provide useful movement data.

  20. Intraperitoneal implantation of life-long telemetry transmitters in otariids

    Directory of Open Access Journals (Sweden)

    Haulena Martin

    2008-12-01

    Full Text Available Abstract Background Pinnipeds, including many endangered and declining species, are inaccessible and difficult to monitor for extended periods using externally attached telemetry devices that are shed during the annual molt. Archival satellite transmitters were implanted intraperitoneally into four rehabilitated California sea lions (Zalophus californianus and 15 wild juvenile Steller sea lions (Eumetopias jubatus to determine the viability of this surgical technique for the deployment of long-term telemetry devices in otariids. The life history transmitters record information throughout the life of the host and transmit data to orbiting satellites after extrusion following death of the host. Results Surgeries were performed under isoflurane anesthesia and single (n = 4 or dual (n = 15 transmitters were inserted into the ventrocaudal abdominal cavity via an 8.5 to 12 cm incision along the ventral midline between the umbilicus and pubic symphysis or preputial opening. Surgeries lasted 90 minutes (SD = 8 for the 19 sea lions. All animals recovered well and were released into the wild after extended monitoring periods from 27 to 69 days at two captive animal facilities. Minimum post-implant survival was determined via post-release tracking using externally attached satellite transmitters or via opportunistic re-sighting for mean durations of 73.7 days (SE = 9.0, Z. californianus and 223.6 days (SE = 71.5, E. jubatus. Conclusion The low morbidity and zero mortality encountered during captive observation and post-release tracking periods confirm the viability of this surgical technique for the implantation of long-term telemetry devices in otariids.