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Sample records for high temperature ohmic

  1. Development of high temperature stable Ohmic and Schottky contacts on n-gallium nitride

    Science.gov (United States)

    Khanna, Rohit

    In this work the effort was made to towards develop and investigate high temperature stable Ohmic and Schottky contacts for n type GaN. Various borides and refractory materials were incorporated in metallization scheme to best attain the desired effect of minimal degradation of contacts when placed at high temperatures. This work focuses on achieving a contact scheme using different borides which include two Tungsten Borides (namely W2B, W2B 5), Titanium Boride (TiB2), Chromium Boride (CrB2) and Zirconium Boride (ZrB2). Further a high temperature metal namely Iridium (Ir) was evaluated as a potential contact to n-GaN, as part of continuing improved device technology development. The main goal of this project was to investigate the most promising boride-based contact metallurgies on GaN, and finally to fabricate a High Electron Mobility Transistor (HEMT) and compare its reliability to a HEMT using present technology contact. Ohmic contacts were fabricated on n GaN using borides in the metallization scheme of Ti/Al/boride/Ti/Au. The characterization of the contacts was done using current-voltage measurements, scanning electron microscopy (SEM) and Auger Electron Spectroscopy (AES) measurements. The contacts formed gave specific contact resistance of the order of 10-5 to 10-6 Ohm-cm2. A minimum contact resistance of 1.5x10-6 O.cm 2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900°C, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200°C to 350°C, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices. Schottky contacts were also fabricated and characterized using all the five boride

  2. Direct high-temperature ohmic heating of metals as liquid pipes.

    Science.gov (United States)

    Grosse, A V; Cahill, J A; Liddell, W L; Murphy, W J; Stokes, C S

    1968-05-03

    When a sufficiently high electric current is passed through a liquid metal, the electromagnetic pressure pinches off the liquid metal and interrupts the flow of current. For the first time the pinch effect has been overcome by use of centrifugal acceleration. By rotation of a pipe of liquid metal, tin or bismuth or their alloys, at sufficiently high speed, it can be heated electrically without intermission of the electric current. One may now heat liquid metallic substances, by resistive (ohmic) heating, to 5000 degrees K and perhaps higher temperatures.

  3. InAlN high electron mobility transistor Ti/Al/Ni/Au Ohmic contact optimisation assisted by in-situ high temperature transmission electron microscopy

    International Nuclear Information System (INIS)

    Smith, M. D.; Parbrook, P. J.; O'Mahony, D.; Conroy, M.; Schmidt, M.

    2015-01-01

    This paper correlates the micro-structural and electrical characteristics associated with annealing of metallic multi-layers typically used in the formation of Ohmic contacts to InAlN high electron mobility transistors. The multi-layers comprised Ti/Al/Ni/Au and were annealed via rapid thermal processing at temperatures up to 925 °C with electrical current-voltage analysis establishing the onset of Ohmic (linear IV) behaviour at 750–800 °C. In-situ temperature dependent transmission electron microscopy established that metallic diffusion and inter-mixing were initiated near a temperature of 500 °C. Around 800 °C, inter-diffusion of the metal and semiconductor (nitride) was observed, correlating with the onset of Ohmic electrical behaviour. The sheet resistance associated with the InAlN/AlN/GaN interface is highly sensitive to the anneal temperature, with the range depending on the Ti layer thickness. The relationship between contact resistivity and measurement temperature follow that predicted by thermionic field emission for contacts annealed below 850 °C, but deviated above this due to excessive metal-semiconductor inter-diffusion

  4. Super high field ohmically heated tokamak operation

    International Nuclear Information System (INIS)

    Cohn, D.R.; Bromberg, L.; Leclaire, R.J.; Potok, R.E.; Jassby, D.L.

    1986-01-01

    The authors discuss a super high field mode of tokamak operation that uses ohmic heating or near ohmic heating to ignition. The super high field mode of operation uses very high values of Β/sup 2/α, where Β is the magnetic field and a is the minor radius (Β/sup 2/α > 100 T/sup 2/m). We analyze copper magnet devices with major radii from 1.7 to 3.0 meters. Minimizing or eliminating the need for auxiliary heating has the potential advantages of reducing uncertainty in extrapolating the energy confinement time of current tokamak devices, and reducing engineering problems associated with large auxiliary heating requirements. It may be possible to heat relatively short pulse, inertially cooled tokamaks to ignition with ohmic power alone. However, there may be advantages in using a very small amount of auxiliary power (less than the ohmic heating power) to boost the ohmic heating and provide a faster start-up, expecially in relatively compact devices

  5. Impurity toroidal rotation and transport in Alcator C-Mod ohmic high confinement mode plasmas

    International Nuclear Information System (INIS)

    Rice, J. E.; Goetz, J. A.; Granetz, R. S.; Greenwald, M. J.; Hubbard, A. E.; Hutchinson, I. H.; Marmar, E. S.; Mossessian, D.; Pedersen, T. Sunn; Snipes, J. A.

    2000-01-01

    Central toroidal rotation and impurity transport coefficients have been determined in Alcator C-Mod [I. H. Hutchinson et al., Phys. Plasmas 1, 1511 (1994)] Ohmic high confinement mode (H-mode) plasmas from observations of x-ray emission following impurity injection. Rotation velocities up to 3x10 4 m/sec in the co-current direction have been observed in the center of the best Ohmic H-mode plasmas. Purely ohmic H-mode plasmas display many characteristics similar to ion cyclotron range of frequencies (ICRF) heated H-mode plasmas, including the scaling of the rotation velocity with plasma parameters and the formation of edge pedestals in the electron density and temperature profiles. Very long impurity confinement times (∼1 sec) are seen in edge localized mode-free (ELM-free) Ohmic H-modes and the inward impurity convection velocity profile has been determined to be close to the calculated neoclassical profile. (c) 2000 American Institute of Physics

  6. Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Liang Song

    2018-03-01

    Full Text Available In this paper, we have studied the performance of Ti/Al/Ni/Au ohmic contact with different Al and Au thicknesses and pretreatments. The temperature dependence of contact resistances (Rc was investigated and it shows that there are different optimal annealing temperatures with different metal thicknesses and pretreatments. The optimal annealing temperature is affected by Al and Au thickness and AlGaN thickness. The etched AlGaN barrier is useful to achieve good ohmic contact (0.24 Ω·mm with a low annealing temperature. Only the contact resistances of the samples with 130 nm Al layer kept stable and the contact resistances of the samples with 100nm and 160 nm Al layers increased with the measurement temperatures. The contact resistances showed a similar increase and then keep stable trend for all the samples in the long-term 400 °C aging process. The ohmic metal of 20/130/50/50 nm Ti/Al/Ni/Au with ICP etching is the superior candidate considering the contact resistance and reliability.

  7. Ultra-high-ohmic microstripline resistors for Coulomb blockade devices

    International Nuclear Information System (INIS)

    Lotkhov, Sergey V

    2013-01-01

    In this paper, we report on the fabrication and low-temperature characterization of ultra-high-ohmic microstripline resistors made of a thin film of weakly oxidized titanium. Nearly linear voltage–current characteristics were measured at temperatures down to T ∼ 20 mK for films with sheet resistivities as high as ∼7 kΩ, i.e. about an order of magnitude higher than our previous findings for weakly oxidized Cr. Our analysis indicates that such an improvement can help to create an advantageous high-impedance environment for different Coulomb blockade devices. Further properties of the Ti film addressed in this work show the promise of low-noise behavior of the resistors when applied in different realizations of the quantum standard of current. (paper)

  8. Space chamber experiments of ohmic heating by high power microwave from the solar power satellite

    Energy Technology Data Exchange (ETDEWEB)

    Kaya, N.; Matsumoto, H.

    1981-12-01

    It is quantitatively predicted that a high power microwave from the Solar Power Satellite (SPS) nonlinearly interacts with the ionospheric plasma. The possible nonlinear interactions are ohmic heating, self-focusing and parametric instabilities. A rocket experiment called MINIX (Microwave-Ionosphere Nonlinear Interaction Experiment) has been attempted to examine these effects, but is note reported here. In parallel to the rocket experiment, a laboratory experiment in a space plasma simulation chamber has been carried out in order to examine ohmic heating in detail and to develop a system of the rocket experiment. Interesting results were observed and these results were utilized to revise the system of the rocket experiments. A significant microwave heating of plasma up to 150% temperature increase was observed with little electron density decrease. It was shown that the temperature increase is not due to the RF breakdown but to the ohmic heating in the simulated ionospheric plasma. These microwave effects have to be taken into account in the SPS Project in the future.

  9. Laser-annealed GaP OHMIC contacts for high-temperature devices

    International Nuclear Information System (INIS)

    Eknoyan, O.; Van der Hoeven, W.; Richardson, T.; Porter, W.A.; Coquat, J.A.

    1980-01-01

    The results of successful Nd:YAG laser annealed ohmic contacts on n-type GaP are reported. Comparisons on identical laser and thermal annealed contacts on the same substrates are performed. Aging investigations are also studied. The results indicate that laser annealed contacts have far superior electrical characteristics, much better surface morphology and are substantially more stable with aging than the same but thermally alloyed ones

  10. Ohmic cooking of whole beef muscle--evaluation of the impact of a novel rapid ohmic cooking method on product quality.

    Science.gov (United States)

    Zell, Markus; Lyng, James G; Cronin, Denis A; Morgan, Desmond J

    2010-10-01

    Cylindrical cores of beef semitendinosus (500g) were cooked in a combined ohmic/convection heating system to low (72 degrees C, LTLT) and high (95 degrees C, HTST) target end-point temperatures. A control was also cooked to an end-point temperature of 72 degrees C at the coldest point. Microbial challenge studies on a model meat matrix confirmed product safety. Hunter L-values showed that ohmically heated meat had significantly (pHTST)) relative to the control (56.85). No significant texture differences (p>/=0.05) were suggested by Warner-Bratzler peak load values (34.09, 36.37 vs. 35.19N). Cook loss was significantly (pHTST and the control were more comparable (6.09 and 7.71, respectively). These results demonstrate considerable potential for this application of ohmic heating for whole meats. Copyright (c) 2010 The American Meat Science Association. Published by Elsevier Ltd. All rights reserved.

  11. Quantitative comparison of electron temperature fluctuations to nonlinear gyrokinetic simulations in C-Mod Ohmic L-mode discharges

    Energy Technology Data Exchange (ETDEWEB)

    Sung, C., E-mail: csung@physics.ucla.edu [University of California, Los Angeles, Los Angeles, California 90095 (United States); White, A. E.; Greenwald, M.; Howard, N. T. [Plasma Science and Fusion Center, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States); Mikkelsen, D. R.; Churchill, R. [Princeton Plasma Physics Laboratory, Princeton, New Jersey 08543 (United States); Holland, C. [University of California, San Diego, La Jolla, California 92093 (United States); Theiler, C. [Ecole Polytechnique Fédérale de Lausanne, SPC, Lausanne 1015 (Switzerland)

    2016-04-15

    Long wavelength turbulent electron temperature fluctuations (k{sub y}ρ{sub s} < 0.3) are measured in the outer core region (r/a > 0.8) of Ohmic L-mode plasmas at Alcator C-Mod [E. S. Marmar et al., Nucl. Fusion 49, 104014 (2009)] with a correlation electron cyclotron emission diagnostic. The relative amplitude and frequency spectrum of the fluctuations are compared quantitatively with nonlinear gyrokinetic simulations using the GYRO code [J. Candy and R. E. Waltz, J. Comput. Phys. 186, 545 (2003)] in two different confinement regimes: linear Ohmic confinement (LOC) regime and saturated Ohmic confinement (SOC) regime. When comparing experiment with nonlinear simulations, it is found that local, electrostatic ion-scale simulations (k{sub y}ρ{sub s} ≲ 1.7) performed at r/a ∼ 0.85 reproduce the experimental ion heat flux levels, electron temperature fluctuation levels, and frequency spectra within experimental error bars. In contrast, the electron heat flux is robustly under-predicted and cannot be recovered by using scans of the simulation inputs within error bars or by using global simulations. If both the ion heat flux and the measured temperature fluctuations are attributed predominantly to long-wavelength turbulence, then under-prediction of electron heat flux strongly suggests that electron scale turbulence is important for transport in C-Mod Ohmic L-mode discharges. In addition, no evidence is found from linear or nonlinear simulations for a clear transition from trapped electron mode to ion temperature gradient turbulence across the LOC/SOC transition, and also there is no evidence in these Ohmic L-mode plasmas of the “Transport Shortfall” [C. Holland et al., Phys. Plasmas 16, 052301 (2009)].

  12. Enhanced TiC/SiC Ohmic contacts by ECR hydrogen plasma pretreatment and low-temperature post-annealing

    International Nuclear Information System (INIS)

    Liu, Bingbing; Qin, Fuwen; Wang, Dejun

    2015-01-01

    Highlights: • Low-temperature ECR microwave hydrogen plasma were pretreated for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces. • The relationship among Ohmic properties, the SiC surface properties and TiC/SiC interface properties were established. • Interface band structures were analyzed to elucidate the mechanism by which the Ohmic contacts were formed. - Abstract: We proposed an electronic cyclotron resonance (ECR) microwave hydrogen plasma pretreatment (HPT) for moderately doped (1 × 10"1"8 cm"−"3) SiC surfaces and formed ideal TiC/SiC Ohmic contacts with significantly low contact resistivity (1.5 × 10"−"5 Ω cm"2) after low-temperature annealing (600 °C). This is achieved by reducing barrier height at TiC/SiC interface because of the release of pinned Fermi level by surface flattening and SiC surface states reduction after HPT, as well as the generation of donor-type carbon vacancies, which reduced the depletion-layer width for electron tunneling after annealing. Interface band structures were analyzed to elucidate the mechanism of Ohmic contact formations.

  13. Ohmic Heating: Concept and Applications-A Review.

    Science.gov (United States)

    Kaur, Nimratbir; Singh, A K

    2016-10-25

    Ohmic heating, also known as Joule heating, electrical resistance heating, and direct electrical resistance heating, is a process of heating the food by passing electric current. In ohmic heating the energy is dissipated directly into the food. Electrical conductivity is a key parameter in the design of an effective ohmic heater. A large number of potential applications exist for ohmic heating, including blanching, evaporation, dehydration, fermentation, sterilization, pasteurization, and heating of foods. Beyond heating, applied electric field under ohmic heating causes electroporation of cell membranes, which increase extraction rates, and reduce gelatinization temperature and enthalpy. Ohmic heating results in faster heating of food along with maintenance of color and nutritional value of food. Water absorption index, water solubility index, thermal properties, and pasting properties are altered with the application of ohmic heating. Ohmic heating results in pre-gelatinized starches, which reduce energy requirement during processing. But its higher initial cost, lack of its applications in foods containing fats and oils, and less awareness limit its use.

  14. Improved Ohmic-contact to AlGaN/GaN using Ohmic region recesses by self-terminating thermal oxidation assisted wet etching technique

    Science.gov (United States)

    Liu, J.; Wang, J.; Wang, H.; Zhu, L.; Wu, W.

    2017-06-01

    Lower Ti/Al/Ni/Au Ohmic contact resistance on AlGaN/GaN with wider rapid thermal annealing (RTA) temperature window was achieved using recessed Ohmic contact structure based on self-terminating thermal oxidation assisted wet etching technique (STOAWET), in comparison with conventional Ohmic contacts. Even at lower temperature such as 650°C, recessed structure by STOAWET could still obtain Ohmic contact with contact resistance of 1.97Ω·mm, while conventional Ohmic structure mainly featured as Schottky contact. Actually, both Ohmic contact recess and mesa isolation processes could be accomplished by STOAWET in one process step and the process window of STOAWET is wide, simplifying AlGaN/GaN HEMT device process. Our experiment shows that the isolation leakage current by STOAWET is about one order of magnitude lower than that by inductivity coupled plasma (ICP) performed on the same wafer.

  15. Ohmic contacts to semiconducting diamond

    Science.gov (United States)

    Zeidler, James R.; Taylor, M. J.; Zeisse, Carl R.; Hewett, C. A.; Delahoussaye, Paul R.

    1990-10-01

    Work was carried out to improve the electron beam evaporation system in order to achieve better deposited films. The basic system is an ion pumped vacuum chamber, with a three-hearth, single-gun e-beam evaporator. Four improvements were made to the system. The system was thoroughly cleaned and new ion pump elements, an e-gun beam adjust unit, and a more accurate crystal monitor were installed. The system now has a base pressure of 3 X 10(exp -9) Torr, and can easily deposit high-melting-temperature metals such as Ta with an accurately controlled thickness. Improved shadow masks were also fabricated for better alignment and control of corner contacts for electrical transport measurements. Appendices include: A Thermally Activated Solid State Reaction Process for Fabricating Ohmic Contacts to Semiconducting Diamond; Tantalum Ohmic Contacts to Diamond by a Solid State Reaction Process; Metallization of Semiconducting Diamond: Mo, Mo/Au, and Mo/Ni/Au; Specific Contact Resistance Measurements of Ohmic Contracts to Diamond; and Electrical Activation of Boron Implanted into Diamond.

  16. Microstructure of V-based ohmic contacts to AlGaN/GaN heterostructures at a reduced annealing temperature

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, A., E-mail: alexander.schmid@physik.tu-freiberg.de; Schroeter, Ch.; Otto, R.; Heitmann, J. [Institute of Applied Physics, TU Bergakademie Freiberg, 09599 Freiberg (Germany); Schuster, M. [Namlab gGmbH, 01187 Dresden (Germany); Klemm, V.; Rafaja, D. [Institute of Materials Science, TU Bergakademie Freiberg, 09599 Freiberg (Germany)

    2015-02-02

    Ohmic contacts with V/Al/Ni/Au and V/Ni/Au metalization schemes were deposited on AlGaN/GaN heterostructures. The dependence of the specific contact resistance on the annealing conditions and the V:Al thickness ratio was shown. For an optimized electrode stack, a low specific contact resistance of 8.9 × 10{sup −6} Ω cm{sup 2} was achieved at an annealing temperature of 650 °C. Compared to the conventional Ti/Al/Ni/Au contact, this is a reduction of 150 K. The microstructure and contact formation at the AlGaN/metal interface were investigated by transmission electron microscopy including high-resolution micrographs and energy dispersive X-ray analysis. It was shown that for low-resistive contacts, the resistivity of the metalization has to be taken into account. The V:Al thickness ratio has an impact on the formation of different intermetallic phases and thus is crucial for establishing ohmic contacts at reduced annealing temperatures.

  17. The analysis of energy efficiency in water electrolysis under high temperature and high pressure

    Science.gov (United States)

    Hourng, L. W.; Tsai, T. T.; Lin, M. Y.

    2017-11-01

    This paper aims to analyze the energy efficiency of water electrolysis under high pressure and high temperature conditions. The effects of temperature and pressure on four different kinds of reaction mechanisms, namely, reversible voltage, activation polarization, ohmic polarization, and concentration polarization, are investigated in details. Results show that the ohmic and concentration over-potentials are increased as temperature is increased, however, the reversible and activation over-potentials are decreased as temperature is increased. Therefore, the net efficiency is enhanced as temperature is increased. The efficiency of water electrolysis at 350°C/100 bars is increased about 17%, compared with that at 80°C/1bar.

  18. Effect of the non-annealed ohmic-recess approach on temperature-dependent properties of a metamorphic high electron mobility transistor

    International Nuclear Information System (INIS)

    Chen, Li-Yang; Tsai, Tsung-Han; Chen, Tzu-Pin; Liu, Yi-Chun; Liu, Wen-Chau; Cheng, Shiou-Ying; Lour, Wen-Shiung; Tsai, Jung-Hui; Guo, Der-Feng

    2008-01-01

    The reliability-related properties of an InAlAs/InGaAs metamorphic high electron mobility transistor (MHEMT), using the non-annealed ohmic-recess (NAOR) approach, are studied and demonstrated. The NAOR device shows significantly improved dc and radio frequency (RF) performance over a wide temperature range (300–500 K). With a 1 × 100 µm 2 gate-dimension MHEMT by the NAOR approach, the considerably improved thermal stability and dc performances, including lower temperature variation coefficients on turn-on voltage (−1.38 mV K −1 ) and gate-drain breakdown voltage (−30.4 mV K −1 ), and on-resistance (2.41 × 10 −3 Ω mm K −1 ), are obtained as the temperature is increased from 300 to 500 K. For RF characteristics, the NAOR device also shows a low degradation rate on drain saturation current operating regimes (−5.52 × 10 −4 K −1 ) as the temperature is increased from 300 to 400 K. In addition, based on the lifetime tests, an activation energy of 1.33 eV and a projected median lifetime of 1.2 × 10 7 h at T ch = 125 °C are obtained for the NAOR MHEMT

  19. Formation Process and Properties of Ohmic Contacts Containing Molybdenum to AlGaN/GaN Heterostructures

    Directory of Open Access Journals (Sweden)

    Wojciech Macherzynski

    2016-01-01

    Full Text Available Properties of wide bandgap semiconductors as chemical inertness to harsh conditions and possibility of working at high temperature ensure possible applications in the field as military, aerospace, automotive, engine monitoring, flame detection and solar UV detection. Requirements for ohmic contacts in semiconductor devices are determined by the proposed application. These contacts to AlGaN/GaN heterostructure for application as high temperature, high frequency and high power devices have to exhibit good surface morphology and low contact resistance. The latter is a crucial factor in limiting the development of high performance AlGaN/GaN devices. Lowering of the resistance is assured by rapid thermal annealing process. The paper present studies of Ti/Al/Mo/Au ohmic contacst annealed at temperature range from 825°C to 885°C in N2 atmosphere. The electrical parameters of examined samples as a function of the annealing process condition have been studied. Initially the annealing temperature increase caused lowering of the contacts resistance. The lowest value was noticed for the temperature of annealing equal to 885°C. Further increase of annealing temperature led to deterioration of contact resistance of investigated ohmic contacts.

  20. Measurement of the drift velocities of electrons and holes in high-ohmic silicon

    International Nuclear Information System (INIS)

    Scharf, Christian

    2014-02-01

    Measurements of the drift velocities of electrons and holes as a function of the electric field and the temperature in high-ohmic silicon of crystal orientation are presented. Significant differences between our results and literature values are observed. A new parametrization of the mobility is introduced. Current transients of n-type pad diodes, generated by fast laser pulses, were investigated in order to determine the drift velocity of electrons and holes separately. Two diodes of high-ohmic silicon (1.5 kΩcm and 5.5 kΩcm) from different manufacturers were investigated as cross check. The drift velocities were determined at electric fields ranging from 5 kV/cm to 50 kV/cm at temperatures ranging from 233 K to 333 K. The mobility parameters were obtained by fitting a simulation of charge drift in silicon to the measurements. Using the convolution theorem the response function of the read-out circuit was determined with the Fourier transforms of the measurement and the simulation. The simulated transient current pulses with the new mobility parametrization are consistent with the measured ones for the temperature and electric field range investigated here. Additionally, the mobility results from the fit are consistent with the mobility determined using the simpler time-of-flight method in the field range where this method is applicable. However, our measurements show a difference of up to 14 % to the values by Canali et al. (1971). The difference to the mobility parametrization by Jacoboni et al. (1977) is up to 24 % while this parametrization is widely used for simulations of the direction due to the lack of data for silicon.

  1. Universal strategy for Ohmic hole injection into organic semiconductors with high ionization energies.

    Science.gov (United States)

    Kotadiya, Naresh B; Lu, Hao; Mondal, Anirban; Ie, Yutaka; Andrienko, Denis; Blom, Paul W M; Wetzelaer, Gert-Jan A H

    2018-04-01

    Barrier-free (Ohmic) contacts are a key requirement for efficient organic optoelectronic devices, such as organic light-emitting diodes, solar cells, and field-effect transistors. Here, we propose a simple and robust way of forming an Ohmic hole contact on organic semiconductors with a high ionization energy (IE). The injected hole current from high-work-function metal-oxide electrodes is improved by more than an order of magnitude by using an interlayer for which the sole requirement is that it has a higher IE than the organic semiconductor. Insertion of the interlayer results in electrostatic decoupling of the electrode from the semiconductor and realignment of the Fermi level with the IE of the organic semiconductor. The Ohmic-contact formation is illustrated for a number of material combinations and solves the problem of hole injection into organic semiconductors with a high IE of up to 6 eV.

  2. Empirical scaling for present ohmic heated tokamaks

    International Nuclear Information System (INIS)

    Daughney, C.

    1975-06-01

    Empirical scaling laws are given for the average electron temperature and electron energy confinement time as functions of plasma current, average electron density, effective ion charge, toroidal magnetic field, and major and minor plasma radius. The ohmic heating is classical, and the electron energy transport is anomalous. The present scaling indicates that ohmic-heating becomes ineffective with larger experiments. (U.S.)

  3. Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

    Directory of Open Access Journals (Sweden)

    Reta

    2017-07-01

    Full Text Available Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has high acidity that needs to be reduced than Luwak coffee, although it is cheaper. Hence, the ohmic technology with a time and temperature variation were applied to measure the total acidity of the coffee to determine optimum fermentation conditions. Results revealed that the total acidity of the coffee varied with fermentation conditions (0.18% – 0.73%. Generally, the longer the fermentation and the higher the temperature, the lower the total acidity. The acidity of the Luwak coffee through natural fermentation was 2.34%, which is substantially higher than the total acidity from the ohmic samples. Ohmic-based fermentation technology, therefore, offers improvements in coffee quality.

  4. Ohmic ITBs in Alcator C-Mod

    Science.gov (United States)

    Fiore, C. L.; Rowan, W. L.; Dominguez, A.; Hubbard, A. E.; Ince-Cushman, A.; Greenwald, M. J.; Lin, L.; Marmar, E. S.; Reinke, M.; Rice, J. E.; Zhurovich, K.

    2007-11-01

    Internal transport barrier plasmas can arise spontaneously in ohmic Alcator C-Mod plasmas where an EDA H-mode has been developed by magnetic field ramping. These ohmic ITBs share the hallmarks of ITBs created with off-axis ICRF injection in that they have highly peaked density and pressure profiles and the peaking can be suppressed by on-axis ICRF. There is a reduction of particle and thermal flux in the barrier region which then allows the neoclassical pinch to peak the central density. Recent work on ITB onset conditions [1] which was motivated by turbulence studies [2] points to the broadening of the Ti profile with off-axis ICRF acting to reduce the ion temperature gradient. This suppresses ITG instability driven particle fluxes, which is thought to be the primary mechanism for ITB formation. The object of this study is to examine the characteristics of ohmic ITBs to find whether the stability of plasmas and the plasma parameters support the onset model. [1]K. Zhurovich, et al., To be published in Nuclear Fusion [2] D. R. Ernst, et al., Phys. Plasmas 11, 2637 (2004)

  5. Evolution of the electron temperature profile of ohmically heated plasmas in TFTR

    International Nuclear Information System (INIS)

    Taylor, G.; Efthimion, P.C.; Arunasalam, V.

    1985-08-01

    Blackbody electron cyclotron emission was used to ascertain and study the evolution and behavior of the electron temperature profile in ohmically heated plasmas in the Tokamak Fusion Test Reactor (TFTR). The emission was measured with absolutely calibrated millimeter wavelength radiometers. The temperature profile normalized to the central temperature and minor radius is observed to broaden substantially with decreasing limiter safety factor q/sub a/, and is insensitive to the plasma minor radius. Sawtooth activity was seen in the core of most TFTR discharges and appeared to be associated with a flattening of the electron temperature profile within the plasma core where q less than or equal to 1. Two types of sawtooth behavior were identified in large TFTR plasmas (minor radius, a less than or equal to 0.8 m) : a typically 35 to 40 msec period ''normal'' sawtooth, and a ''compound'' sawtooth with 70 to 80 msec period

  6. Changes in core electron temperature fluctuations across the ohmic energy confinement transition in Alcator C-Mod plasmas

    International Nuclear Information System (INIS)

    Sung, C.; White, A.E.; Howard, N.T.; Oi, C.Y.; Rice, J.E.; Gao, C.; Ennever, P.; Porkolab, M.; Parra, F.; Ernst, D.; Walk, J.; Hughes, J.W.; Irby, J.; Kasten, C.; Hubbard, A.E.; Greenwald, M.J.; Mikkelsen, D.

    2013-01-01

    The first measurements of long wavelength (k y ρ s < 0.3) electron temperature fluctuations in Alcator C-Mod made with a new correlation electron cyclotron emission diagnostic support a long-standing hypothesis regarding the confinement transition from linear ohmic confinement (LOC) to saturated ohmic confinement (SOC). Electron temperature fluctuations decrease significantly (∼40%) crossing from LOC to SOC, consistent with a change from trapped electron mode (TEM) turbulence domination to ion temperature gradient (ITG) turbulence as the density is increased. Linear stability analysis performed with the GYRO code (Candy and Waltz 2003 J. Comput. Phys. 186 545) shows that TEMs are dominant for long wavelength turbulence in the LOC regime and ITG modes are dominant in the SOC regime at the radial location (ρ ∼ 0.8) where the changes in electron temperature fluctuations are measured. In contrast, deeper in the core (ρ < 0.8), linear stability analysis indicates that ITG modes remain dominant across the LOC/SOC transition. This radial variation suggests that the robust global changes in confinement of energy and momentum occurring across the LOC/SOC transition are correlated to local changes in the dominant turbulent mode near the edge. (paper)

  7. Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

    1993-10-01

    The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T[sub i], and ion thermal diffusivity, [chi][sub i], are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author).

  8. Ohmic ion temperature and thermal diffusivity profiles from the JET neutron emission profile monitor

    International Nuclear Information System (INIS)

    Esposito, B.

    1993-01-01

    The JET neutron emission profile monitor was used to study ohmically heated deuterium discharges. The radial profile of the neutron emissivity is deduced from the line-integral data. The profiles of ion temperature, T i , and ion thermal diffusivity, χ i , are derived under steady-state conditions. The ion thermal diffusivity is higher than, and its scaling with plasma current opposite to, that predicted by neoclassical theory. (author)

  9. Developing and modelling of ohmic heating for solid food products

    DEFF Research Database (Denmark)

    Feyissa, Aberham Hailu; Frosch, Stina

    Heating of solid foods using the conventional technologies is time-consuming due to the fact that heat transfer is limited by internal conduction within the product. This is a big challenge to food manufactures who wish to heat the product faster to the desired core temperature and to ensure more...... uniform quality across the product. Ohmic heating is one of the novel technologies potentially solving this problem by allowing volumetric heating of the product and thereby reducing or eliminating temperature gradients within the product. However, the application of ohmic heating for solid food products...... such as meat and seafood is not industrially utilized yet. Therefore, the aim of the current work is to model and develop the ohmic heating technology for heating of solid meat and seafood. A 3D mathematical model of coupled heat transfer and electric field during ohmic heating of meat products has been...

  10. Innovative food processing technology using ohmic heating and aseptic packaging for meat.

    Science.gov (United States)

    Ito, Ruri; Fukuoka, Mika; Hamada-Sato, Naoko

    2014-02-01

    Since the Tohoku earthquake, there is much interest in processed foods, which can be stored for long periods at room temperature. Retort heating is one of the main technologies employed for producing it. We developed the innovative food processing technology, which supersede retort, using ohmic heating and aseptic packaging. Electrical heating involves the application of alternating voltage to food. Compared with retort heating, which uses a heat transfer medium, ohmic heating allows for high heating efficiency and rapid heating. In this paper we ohmically heated chicken breast samples and conducted various tests on the heated samples. The measurement results of water content, IMP, and glutamic acid suggest that the quality of the ohmically heated samples was similar or superior to that of the retort-heated samples. Furthermore, based on the monitoring of these samples, it was observed that sample quality did not deteriorate during storage. © 2013. Published by Elsevier Ltd on behalf of The American Meat Science Association. All rights reserved.

  11. Remarks on the thermal stability of an Ohmic-heated nanowire

    Science.gov (United States)

    Timsit, Roland S.

    2018-05-01

    The rise in temperature of a wire made from specific materials, due to ohmic heating by a DC electrical current, may lead to uncontrollable thermal runaway with ensuing melting. Thermal runaway stems from a steep decrease with increasing temperature of the thermal conductivity of the conducting material and subsequent trapping of the ohmic heat in the wire, i.e., from the inability of the wire to dissipate the heat sufficiently quickly by conduction to the cooler ends of the wire. In this paper, we show that the theory used to evaluate the temperature of contacting surfaces in a bulk electrical contact may be applied to calculate the conditions for thermal runaway in a nanowire. Implications of this effect for electrical contacts are addressed. A possible implication for memory devices using ohmic-heated nanofilms or nanowires is also discussed.

  12. Ohmic Heating: An Emerging Concept in Organic Synthesis.

    Science.gov (United States)

    Silva, Vera L M; Santos, Luis M N B F; Silva, Artur M S

    2017-06-12

    The ohmic heating also known as direct Joule heating, is an advanced thermal processing method, mainly used in the food industry to rapidly increase the temperature for either cooking or sterilization purposes. Its use in organic synthesis, in the heating of chemical reactors, is an emerging method that shows great potential, the development of which has started recently. This Concept article focuses on the use of ohmic heating as a new tool for organic synthesis. It presents the fundamentals of ohmic heating and makes a qualitative and quantitative comparison with other common heating methods. A brief description of the ohmic reactor prototype in operation is presented as well as recent examples of its use in organic synthesis at laboratory scale, thus showing the current state of the research. The advantages and limitations of this heating method, as well as its main current applications are also discussed. Finally, the prospects and potential implications of ohmic heating in future research in chemical synthesis are proposed. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Dual ohmic contact to N- and P-type silicon carbide

    Science.gov (United States)

    Okojie, Robert S. (Inventor)

    2013-01-01

    Simultaneous formation of electrical ohmic contacts to silicon carbide (SiC) semiconductor having donor and acceptor impurities (n- and p-type doping, respectively) is disclosed. The innovation provides for ohmic contacts formed on SiC layers having n- and p-doping at one process step during the fabrication of the semiconductor device. Further, the innovation provides a non-discriminatory, universal ohmic contact to both n- and p-type SiC, enhancing reliability of the specific contact resistivity when operated at temperatures in excess of 600.degree. C.

  14. A thermal transport coefficient for ohmic and ICRF plasmas in alcator C-mode

    International Nuclear Information System (INIS)

    Daughton, W.; Coppi, B.; Greenwald, M.

    1996-01-01

    The energy confinement in plasmas produced by Alcator C-Mod machine is markedly different from that observed by previous high field compact machines such as Alcator A and C, FT, and more recently FTU. For ohmic plasmas at low and moderate densities, the confinement times routinely exceed those expected from the so-called open-quotes neo-Alcatorclose quotes scaling by a factor as high as three. For both ohmic and ICRF heated plasmas, the energy confinement time increases with the current and is approximately independent of the density. The similarity in the confinement between the ohmic and ICRF regimes opens the possibility that the thermal transport in Alcator C-Mod may be described by one transport coefficient for both regimes. We introduce a modified form of a transport coefficient previously used to describe ohmic plasmas in Alcator C-Mod. The coefficient is inspired by the properties of the so-called open-quotes ubiquitousclose quotes mode that can be excited in the presence of a significant fraction of trapped electrons and also includes the constraint of profile consistency. A detailed series of transport simulations are used to show that the proposed coefficient can reproduce the observed temperature profiles, loop voltage and energy confinement time for both ohmic and ICRF discharges. A total of nearly two dozen ohmic and ICRF Alcator C-Mod discharges have been fit over the range of parameter space available using this transport coefficient

  15. Achieving Ohmic Contact for High-quality MoS2 Devices on Hexagonal Boron Nitride

    Science.gov (United States)

    Cui, Xu

    MoS2, among many other transition metal dichalcogenides (TMDCs), holds great promise for future applications in nano-electronics, opto-electronics and mechanical devices due to its ultra-thin nature, flexibility, sizable band-gap, and unique spin-valley coupled physics. However, there are two main challenges that hinder careful study of this material. Firstly, it is hard to achieve Ohmic contacts to mono-layer MoS2, particularly at low temperatures (T) and low carrier densities. Secondly, materials' low quality and impurities introduced during the fabrication significantly limit the electron mobility of mono- and few-layer MoS2 to be substantially below theoretically predicted limits, which has hampered efforts to observe its novel quantum transport behaviours. Traditional low work function metals doesn't necessary provide good electron injection to thin MoS2 due to metal oxidation, Fermi level pinning, etc. To address the first challenge, we tried multiple contact schemes and found that mono-layer hexagonal boron nitride (h-BN) and cobalt (Co) provide robust Ohmic contact. The mono-layer spacer serves two advantageous purposes: it strongly interacts with the transition metal, reducing its work function by over 1 eV; and breaks the metal-TMDCs interaction to eliminate the interfacial states that cause Fermi level pinning. We measure a flat-band Schottky barrier of 16 meV, which makes thin tunnel barriers upon doping the channels, and thus achieve low-T contact resistance of 3 kohm.um at a carrier density of 5.3x10. 12/cm. 2. Similar to graphene, eliminating all potential sources of disorder and scattering is the key to achieving high performance in MoS2 devices. We developed a van der Waals heterostructure device platform where MoS2 layers are fully encapsulated within h-BN and electrically contacted in a multi-terminal geometry using gate-tunable graphene electrodes. The h-BN-encapsulation provides excellent protection from environmental factors, resulting in

  16. Analytical models of Ohmic heating and conventional heating in food processing

    Science.gov (United States)

    Serventi, A.; Bozzoli, F.; Rainieri, S.

    2017-11-01

    Ohmic heating is a food processing operation in which an electric current is passed through a food and the electrical resistance of the food causes the electric power to be transformed directly into heat. The heat is not delivered through a surface as in conventional heat exchangers but it is internally generated by Joule effect. Therefore, no temperature gradient is required and it origins quicker and more uniform heating within the food. On the other hand, it is associated with high energy costs and its use is limited to a particular range of food products with an appropriate electrical conductivity. Sterilization of foods by Ohmic heating has gained growing interest in the last few years. The aim of this study is to evaluate the benefits of Ohmic heating with respect to conventional heat exchangers under uniform wall temperature, a condition that is often present in industrial plants. This comparison is carried out by means of analytical models. The two different heating conditions are simulated under typical circumstances for the food industry. Particular attention is paid to the uniformity of the heat treatment and to the heating section length required in the two different conditions.

  17. Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Hailong; Shen, Huajun, E-mail: shenhuajun@ime.ac.cn; Tang, Yidan; Bai, Yun; Liu, Xinyu [Microwave Device and IC Department, Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029 (China); Zhang, Xufang [School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Wu, Yudong; Liu, Kean [Zhuzhou CSR Times Electric Co., Ltd, ZhuZhou 412001 (China)

    2015-01-14

    Low resistivity Ni/Ti/Al ohmic contacts on p-type 4H-SiC epilayer were developed, and their thermal stabilities were also experimentally investigated through high temperature storage at 600 °C for 100 h. The contact resistance of the Al/Ti/Ni/SiC contacts degraded in different degrees, and the contact morphology deteriorated with the increases of the average surface roughness and interface voids. X-ray spectra showed that Ni{sub 2}Si and Ti{sub 3}SiC{sub 2}, which were formed during ohmic contact annealing and contributed to low contact resistivity, were stable under high temperature storage. The existence of the TiAl{sub 3} and NiAl{sub 3} intermetallic phases was helpful to prevent Al agglomeration on the interface and make the contacts thermally stable. Auger electron spectroscopy indicated that the incorporation of oxygen at the surface and interface led to the oxidation of Al or Ti resulting in increased contact resistance. Also, the formation of these oxides roughened the surface and interface. The temperature-dependence of the specific contact resistance indicated that a thermionic field emission mechanism dominates the current transport for contacts before and after the thermal treatment. It suggests that the Ni/Ti/Al composite ohmic contacts are promising for SiC devices to be used in high temperature applications.

  18. Silver antimony Ohmic contacts to moderately doped n-type germanium

    Energy Technology Data Exchange (ETDEWEB)

    Dumas, D. C. S.; Gallacher, K.; Millar, R.; Paul, D. J., E-mail: Douglas.Paul@glasgow.ac.uk [School of Engineering, University of Glasgow, Rankine Building, Oakfield Avenue, Glasgow G12 8LT (United Kingdom); MacLaren, I. [SUPA School of Physics and Astronomy, University of Glasgow, Kelvin Building, University Avenue, Glasgow G12 8QQ (United Kingdom); Myronov, M.; Leadley, D. R. [Department of Physics, University of Warwick, Coventry CV4 7AL (United Kingdom)

    2014-04-21

    A self doping contact consisting of a silver/antimony alloy that produces an Ohmic contact to moderately doped n-type germanium (doped to a factor of four above the metal-insulator transition) has been investigated. An evaporation of a mixed alloy of Ag/Sb (99%/1%) onto n-Ge (N{sub D}=1×10{sup 18} cm{sup −3}) annealed at 400 °C produces an Ohmic contact with a measured specific contact resistivity of (1.1±0.2)×10{sup −5} Ω-cm{sup 2}. It is proposed that the Ohmic behaviour arises from an increased doping concentration at the Ge surface due to the preferential evaporation of Sb confirmed by transmission electron microscope analysis. It is suggested that the doping concentration has increased to a level where field emission will be the dominate conduction mechanism. This was deduced from the low temperature electrical characterisation of the contact, which exhibits Ohmic behaviour down to a temperature of 6.5 K.

  19. Ignited tokamak devices with ohmic-heating dominated startup

    International Nuclear Information System (INIS)

    Cohn, D.R.; Bromberg, L.; Jassby, D.L.

    1986-01-01

    Startup of tokamaks such that the auxiliary heating power is significantly less than the ohmic heating power at all times during heating to ignition can be referred to as ''Ohmic-heating dominated startup.'' Operation in this mode could increase the certainty of heating to ignition since energy confinement during startup may be described by present scaling laws for ohmic heating. It could also reduce substantially the auxiliary heating power (the required power may be quite large for auxiliary-heating dominated startup). These advantages might be realized without the potentially demanding requirements for pure ohmic heating to ignition. In this paper the authors discuss the requirements for ohmic-heating dominated startup and present illustrative design parameters for compact experiment ignition devices that use high performance copper magnets

  20. Computational studies of ohmic heating in the spheromak

    International Nuclear Information System (INIS)

    Olson, R.E.

    1983-01-01

    Time-dependent computational simulations using both single-fluid O-D and two-fluid 1 1/2-D models are developed for and utilized in an investigation of the ohmic heating of a spheromak plasma. The plasma density and composition, the applied magnetic field strength, the plasma size, and the plasma current density profile are considered for their effects on the spheromak heating rate and maximum achievable temperature. The feasibility of ohmic ignition of a reactor-size spheromak plasma is also contemplated

  1. Evolution of Electrically Active Defects in n-GaN During Heat Treatment Typical for Ohmic Contact Formation

    DEFF Research Database (Denmark)

    Boturchuk, Ievgen; Scheffler, Leopold Julian; Larsen, Arne Nylandsted

    2018-01-01

    Ohmic contact formation to n-type GaN often involves high temperature steps, for example sintering at about 800 °C in the case of Ti-based contacts. Such processing steps might cause changes in the distribution, concentration, and properties of the defects. The present work aims at contributing...... to the knowledge about defect evolution in GaN upon processing at different temperatures. The processing temperatures are selected according to fabrication procedures for commonly used ohmic contacts to n-GaN: 300 °C (In-based), 550 °C (Ta-based), and 800 °C (Ti-based). Properties and concentration of the defects...

  2. A variational master equation approach to quantum dynamics with off-diagonal coupling in a sub-Ohmic environment

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Ke-Wei [School of Science, Hangzhou Dianzi University, Hangzhou 310018 (China); Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore); Fujihashi, Yuta; Ishizaki, Akihito [Institute for Molecular Science, National Institutes of Natural Sciences, Okazaki 444-8585 (Japan); Zhao, Yang, E-mail: YZhao@ntu.edu.sg [Division of Materials Science, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2016-05-28

    A master equation approach based on an optimized polaron transformation is adopted for dynamics simulation with simultaneous diagonal and off-diagonal spin-boson coupling. Two types of bath spectral density functions are considered, the Ohmic and the sub-Ohmic. The off-diagonal coupling leads asymptotically to a thermal equilibrium with a nonzero population difference P{sub z}(t → ∞) ≠ 0, which implies localization of the system, and it also plays a role in restraining coherent dynamics for the sub-Ohmic case. Since the new method can extend to the stronger coupling regime, we can investigate the coherent-incoherent transition in the sub-Ohmic environment. Relevant phase diagrams are obtained for different temperatures. It is found that the sub-Ohmic environment allows coherent dynamics at a higher temperature than the Ohmic environment.

  3. Study of degradation processes kinetics in ohmic contacts of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures under influence of temperature

    Science.gov (United States)

    Makeev, M. O.; Meshkov, S. A.

    2017-07-01

    The artificial aging of resonant tunneling diodes based on nanoscale AlAs/GaAs heterostructures was conducted. As a result of the thermal influence resonant tunneling diodes IV curves degrade firstly due to ohmic contacts' degradation. To assess AlAs/GaAs resonant tunneling diodes degradation level and to predict their reliability, a functional dependence of the contact resistance of resonant tunneling diode AuGeNi ohmic contacts on time and temperature was offered.

  4. Plasma-assisted ohmic contact for AlGaN/GaN heterostructure field-effect transistors

    International Nuclear Information System (INIS)

    Zhang, Jiaqi; Wang, Lei; Wang, Qingpeng; Jiang, Ying; Li, Liuan; Ao, Jin-Ping; Zhu, Huichao

    2016-01-01

    An Al-based ohmic process assisted by an inductively coupled plasma (ICP) recess treatment is proposed for AlGaN/GaN heterostructure field-effect transistors (HFETs) to realize ohmic contact, which is only needed to anneal at 500 °C. The recess treatment was done with SiCl 4 plasma with 100 W ICP power for 20 s and annealing at 575 °C for 1 min. Under these conditions, contact resistance of 0.52 Ωmm was confirmed. To suppress the ball-up phenomenon and improve the surface morphology, an Al/TiN structure was also fabricated with the same conditions. The contact resistance was further improved to 0.30 Ωmm. By using this plasma-assisted ohmic process, a gate-first HFET was fabricated. The device showed high drain current density and high transconductance. The leakage current of the TiN-gate device decreased to 10 −9 A, which was 5 orders of magnitude lower than that of the device annealed at 800 °C. The results showed that the low-temperature ohmic contact process assisted by ICP treatment is promising for the fabrication of gate-first and self-aligned gate HFETs. (paper)

  5. Effect of indirect ohmic heating on quality of ready-to-eat pineapple packed in plastic pouch

    Directory of Open Access Journals (Sweden)

    Hoang Pham

    2014-06-01

    Full Text Available Ready-to-eat fruits packed in sealed containers are highly perishable due to their intrinsic characteristics and lack of full thermal process. Ohmic heating has the advantages of rapid liquid heating through electrical current. The aim of this research was to investigate the effect of indirect ohmic heating on pH, total soluble solids, polyphenol oxidase activity, color and texture of ready-to-eat pineapple packed in a polypropylene pouch with 1% calcium chloride and 0.3% ascorbic acid packing solution. The pre-packed sample in a pouch was placed in the ohmic heating jar filled with 0.5% sodium chloride ohmic heating solution which was then ohmic heated at different voltage gradients (20, 30, 40 V/cm, to different packing solution temperatures (60, 70, 80°C for 60s. Samples were kept at 4°C for quality measurement. It was found that browning index of ready-to-eat pineapple treated with 20 V/cm at 80°C, 30 V/cm at 70°C and 80°C, 40 V/cm at 80°C did not change during 12 days cold storage (p>0.05. Polyphenol oxidase was inactivated when the temperature of the pineapple was 62°C or higher. After 10 days at 4°C, the pineapple heated with 30 V/cm at 70°C had much higher firmness than the un-heated sample kept at the same storage condition. Indirect ohmic heating of pre-packed ready-to-eat pineapple in polypropylene pouch with 30 V/cm at 70°C packing solution temperature for 60s could be used as minimal heating methods to maintain the quality of ready-to-eat fruits in 12 days at 4°C.

  6. Confinement of ohmically heated plasmas and turbulent heating in high-magnetic field tokamak TRIAM-1

    Energy Technology Data Exchange (ETDEWEB)

    Hiraki, N; Itoh, S; Kawai, Y; Toi, K; Nakamura, K [Kyushu Univ., Fukuoka (Japan). Research Inst. for Applied Mechanics

    1979-12-01

    TRIAM-1, the tokamak device with high toroidal magnetic field, has been constructed to establish the scaling laws of advanced tokamak devices such as Alcator, and to study the possibility of the turbulent heating as a further economical heating method of the fusion oriented plasmas. The plasma parameters obtained by ohmic heating alone are as follows; central electron temperature T sub(e0) = 640 eV, central ion temperature T sub(i0) = 280 eV and line-average electron density n average sub(e) = 2.2 x 10/sup 14/ cm/sup -3/. The empirical scaling laws are investigated concerning T sub(e0), T sub(i0) and n average sub(e). The turbulent heating has been carried out by applying the high electric field in the toroidal direction to the typical tokamak discharge with T sub(i0) asymptotically equals 200 eV. The efficient ion heating is observed and T sub(i0) attains to about 600 eV.

  7. Voltage Controlled Hot Carrier Injection Enables Ohmic Contacts Using Au Island Metal Films on Ge.

    Science.gov (United States)

    Ganti, Srinivas; King, Peter J; Arac, Erhan; Dawson, Karl; Heikkilä, Mikko J; Quilter, John H; Murdoch, Billy; Cumpson, Peter; O'Neill, Anthony

    2017-08-23

    We introduce a new approach to creating low-resistance metal-semiconductor ohmic contacts, illustrated using high conductivity Au island metal films (IMFs) on Ge, with hot carrier injection initiated at low applied voltage. The same metallization process simultaneously allows ohmic contact to n-Ge and p-Ge, because hot carriers circumvent the Schottky barrier formed at metal/n-Ge interfaces. A 2.5× improvement in contact resistivity is reported over previous techniques to achieve ohmic contact to both n- and p- semiconductor. Ohmic contacts at 4.2 K confirm nonequilibrium current transport. Self-assembled Au IMFs are strongly orientated to Ge by annealing near the Au/Ge eutectic temperature. Au IMF nanostructures form, provided the Au layer is below a critical thickness. We anticipate that optimized IMF contacts may have applicability to many material systems. Optimizing this new paradigm for metal-semiconductor contacts offers the prospect of improved nanoelectronic systems and the study of voltage controlled hot holes and electrons.

  8. Non-ohmic transport behavior in ultra-thin gold films

    International Nuclear Information System (INIS)

    Alkhatib, A.; Souier, T.; Chiesa, M.

    2011-01-01

    Highlights: → C-AFM study on ultra-thin gold films. → Connection between ultra-thin film morphology and lateral electrical transport. → Transition between ohmic and non-ohmic behavior. → Electrical transition correlation to the film structure continuity. → Direct and indirect tunneling regimes related to discontinuous structures. - Abstract: Structure and local lateral electrical properties of Au films of thicknesses ranging from 10 to 140 nm are studied using conductive atomic force microscopy. Comparison of current maps taken at different thicknesses reveals surprising highly resistive regions (10 10 -10 11 Ω), the density of which increases strongly at lower thickness. The high resistivity is shown to be directly related to discontinuities in the metal sheet. Local I-V curves are acquired to show the nature of electrical behavior relative to thickness. Results show that in Au films of higher thickness the electrical behavior is ohmic, while it is non-ohmic in highly discontinuous films of lower thickness, with the transition happening between 34 and 39 nm. The non-ohmic behavior is explained with tunneling occurring between separated Au islands. The results explain the abrupt increase of electrical resistivity at lower thin film thicknesses.

  9. Mechanisms of current flow in metal-semiconductor ohmic contacts

    International Nuclear Information System (INIS)

    Blank, T. V.; Gol'dberg, Yu. A.

    2007-01-01

    Published data on the properties of metal-semiconductor ohmic contacts and mechanisms of current flow in these contacts (thermionic emission, field emission, thermal-field emission, and also current flow through metal shunts) are reviewed. Theoretical dependences of the resistance of an ohmic contact on temperature and the charge-carrier concentration in a semiconductor were compared with experimental data on ohmic contacts to II-VI semiconductors (ZnSe, ZnO), III-V semiconductors (GaN, AlN, InN, GaAs, GaP, InP), Group IV semiconductors (SiC, diamond), and alloys of these semiconductors. In ohmic contacts based on lightly doped semiconductors, the main mechanism of current flow is thermionic emission with the metal-semiconductor potential barrier height equal to 0.1-0.2 eV. In ohmic contacts based on heavily doped semiconductors, the current flow is effected owing to the field emission, while the metal-semiconductor potential barrier height is equal to 0.3-0.5 eV. In alloyed In contacts to GaP and GaN, a mechanism of current flow that is not characteristic of Schottky diodes (current flow through metal shunts formed by deposition of metal atoms onto dislocations or other imperfections in semiconductors) is observed

  10. Analysis of the ion energy transport in ohmic discharges in the ASDEX tokamak

    International Nuclear Information System (INIS)

    Simmet, E.E.; Fahrbach, H.U.; Herrmann, W.; Stroth, U.

    1996-10-01

    An analysis of the local ion energy transport is performed for more than one hundred well documented ohmic ASDEX discharges. These are characterized by three different confinement regimes: the linear ohmic confinement (LOC), the saturated ohmic confinement (SOC) and the improved ohmic confinement (IOC). All three are covered by this study. To identify the most important local transport mechanism of the ion heat, the ion power balance equation is analyzed. Two methods are used: straightforward calculation with experimental data only, and a comparison of measured and calculated profiles of the ion temperature and the ion heat conductivity, respectively. A discussion of the power balance shows that conductive losses dominate the ion energy transport in all ohmic discharges of ASDEX. Only inside the q=1-surface losses due to sawtooth activity play a role, while at the edge convective fluxes and CX-losses influence the ion energy transport. Both methods lead to the result that both the ion temperature and the ion heat conductivity are consistent with predictions of the neoclassical theory. Enhanced heat losses as suggested by theories eg. on the basis of η i modes can be excluded. (orig.)

  11. Study of Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT

    Science.gov (United States)

    Shostachenko, S. A.; Porokhonko, Y. A.; Zakharchenko, R. V.; Burdykin, M. S.; Ryzhuk, R. V.; Kargin, N. I.; Kalinin, B. V.; Belov, A. A.; Vasiliev, A. N.

    2017-12-01

    This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

  12. Laminar forced convection in a cylindrical collinear ohmic sterilizer

    Directory of Open Access Journals (Sweden)

    Pesso Tommaso

    2017-01-01

    Full Text Available The present work deals with a thermo-fluid analysis of a collinear cylindrical ohmic heater in laminar flow. The geometry of interest is a circular electrically insulated glass pipe with two electrodes at the pipe ends. For this application, since the electrical conductivity of a liquid food depends strongly on the temperature, the thermal analysis of an ohmic heater requires the simultaneous solution of the electric and thermal fields. In the present work the analysis involves decoupling the previous fields by means of an iterative procedure. The thermal field has been calculated using an analytical solution, which leads to fast calculations for the temperature distribution in the heater. Some considerations of practical interest for the design are also given.

  13. An “ohmic-first” self-terminating gate-recess technique for normally-off Al2O3/GaN MOSFET

    Science.gov (United States)

    Wang, Hongyue; Wang, Jinyan; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

    2018-04-01

    In this article, an ohmic-first AlGaN/GaN self-terminating gate-recess etching technique was demonstrated where ohmic contact formation is ahead of gate-recess-etching/gate-dielectric-deposition (GRE/GDD) process. The ohmic contact exhibits few degradations after the self-terminating gate-recess process. Besides, when comparing with that using the conventional fabrication process, the fabricated device using the ohmic-first fabrication process shows a better gate dielectric quality in terms of more than 3 orders lower forward gate leakage current, more than twice higher reverse breakdown voltage as well as better stability. Based on this proposed technique, the normally-off Al2O3/GaN MOSFET exhibits a threshold voltage (V th) of ˜1.8 V, a maximum drain current of ˜328 mA/mm, a forward gate leakage current of ˜10-6 A/mm and an off-state breakdown voltage of 218 V at room temperature. Meanwhile, high temperature characteristics of the device was also evaluated and small variations (˜7.6%) of the threshold voltage was confirmed up to 300 °C.

  14. Low ohmic multilayer contacts in lead-tin-telluride diode lasers

    International Nuclear Information System (INIS)

    Herrmann, K.; Sumpf, B.; Boehme, D.; Hannemann, M.

    1983-01-01

    The preparation and the influence of low ohmic multilayer thin film contacts of lead-salt homo- and heterolasers on the degradation of lasing parameters during recycling processes between low working temperatures and room temperatures storage are described and discussed in detail. (author)

  15. Evidence for reduction of the toroidal ITG instability in the transition from saturated to improved Ohmic confinement in the tokamak TEXTOR

    International Nuclear Information System (INIS)

    Kreter, A; Schweer, B; Tokar, M Z; Unterberg, B

    2003-01-01

    In high density Ohmically heated discharges in the tokamak TEXTOR a transition from the saturated Ohmic confinement (SOC) to the improved Ohmic confinement (IOC) was observed triggered by a sudden reduction of the external gas flow. The SOC-IOC transition was investigated regarding the influence of the toroidal ITG instability driven by the ion temperature gradient (ITG). The ion temperature profiles were measured with high radial resolution by means of charge-exchange recombination spectroscopy (CXRS) with a high-energetic diagnostic hydrogen beam recently installed at TEXTOR. On the basis of the measured ion temperature distributions the η i parameter (ratio of the density and ion temperature decay lengths) and the growth rate of the toroidal ITG instability were calculated. After the SOC-IOC transition η i drops and lies in a noticeably smaller radial region over the threshold for the toroidal ITG. In consequence of it, the IOC regime is characterized by a clear reduction of the ITG growth rate γ ITG which was calculated including finite Larmor radius effects. The steepening of the plasma density profile after the decrease of the external gas flow is the main reason for the reduction of the ITG growth rate and the subsequent confinement transition to the IOC regime

  16. A new method of making ohmic contacts to p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Hernández-Gutierrez, C.A., E-mail: chernandez@fis.cinvestav.mx [DNyN, Cinvestav-IPN, México, DF, 07360 (Mexico); Kudriavtsev, Yu. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Mota, Esteban [ESIME, Instituto Politécnico Nacional, México, DF, 07738 (Mexico); Hernández, A.G.; Escobosa-Echavarría, A.; Sánchez-Resendiz, V. [Departamento Ingeniería Eléctrica – SEES, Cinvestav-IPN, México, DF, 07360 (Mexico); Casallas-Moreno, Y.L.; López-López, M. [Departamento Física, Cinvestav-IPN, México, DF, 07360 (Mexico)

    2016-12-01

    Highlights: • Low resistance Ohmic contacts preparation is based on low energy high dose In{sup +} ion implantation into Metal/p-GaN to achieve a thin layer of In{sub x}Ga{sub 1-x}N just at the interface. • The specific ohmic contact was reduced from 10{sup −2} Ωcm{sup 2} to 2.5 × 10{sup −4} Ωcm{sup 2}. - Abstract: The structural, chemical, and electrical characteristics of In{sup +} ion-implanted Au/Ni, Au/Nb and Au/W ohmic contacts to p-GaN were investigated. After the preparation of Ni, Nb and W electrode on the surface of p-GaN, the metal/p-GaN contact interface was implanted by 30 keV In{sup +} ions with an implantation dose of 5 × 10{sup 15} ions/cm{sup 2} at room temperature to form a thin layer of In{sub x}Ga{sub 1-x}N located at the metal-semiconductor interface, achieved to reduce the specific contact resistance due to the improving quantum tunneling transport trough to the structure. The characterization was carried out by high-resolution X-ray diffraction, scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectrometry to investigate the formation of ternary alloy, re-crystallization by rapid thermal annealing process after In{sup +} implantation, and the redistribution of elements. The specific contact resistance was extracted by current-voltage (I-V) curves using transmission line method; the lowest specific contact resistance of 2.5 × 10{sup −4} Ωcm{sup 2} was achieved for Au/Ni/p-In{sub x}Ga{sub 1-x}N/p-GaN ohmic contacts.

  17. Effects of combined gate and ohmic recess on GaN HEMTs

    Directory of Open Access Journals (Sweden)

    Sunil Kumar

    2016-09-01

    Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

  18. Evaluating strength at ultra-high temperatures-Methods and results

    International Nuclear Information System (INIS)

    Voelkl, Rainer; Fischer, Bernd; Beschliesser, Manuel; Glatzel, Uwe

    2008-01-01

    Proprietary equipment for mechanical testing at ultra-high temperatures by ohmic heating is outlined. Strain is measured with a video extensometer with an accuracy of up to Δε-bar∼±0.00025%. Stability and accuracy of the test system are evaluated on Pt- and refractory alloys. These specially designed and built test facilities are compared to commercially available high-vacuum test chambers with tungsten heater

  19. Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

    International Nuclear Information System (INIS)

    Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

    2006-01-01

    The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

  20. Fundamental investigation of high temperature operation of field effect transistor devices

    Science.gov (United States)

    Chern, Jehn-Huar

    In this dissertation copper germanium (CuGe)-based materials were investigated as potential ohmic contacts to n-type gallium arsenide (GaAs). The CuGe-based contacts to GaAs were found to not form any reaction products with GaAs and to have low contact resistance comparable to that of nickel gold germanium (NiAuGe) ohmic contacts to GaAs. The potential for high temperature applications using CuGe ohmic contacts was investigated. A guideline for further reduction of the contact resistance has been achieved after investigating the detailed mechanism of the formation of binary CuGe contacts over a wide range of Ge concentrations. The thermal stability of CuGe contacts was significantly enhanced and improved by introducing a diffusion barrier, titanium tungsten nitride (TiWNx), and a gold (Au) overlayer for high temperature applications. Novel approaches such as epitaxial thulium phosphide (TmP) Schottky contacts and the utilization of low temperature (LT)-aluminum gallium arsenide (AlGaAs) were also investigated in this dissertation and likely will be the standard technologies for a new generation of high-temperature electronics. Inserting a layer of aluminum arsenide (AlAs) underneath the channel of a GaAs-based MESFET was found to reduce substrate leakage currents by a factor of 30 compared with the same MESFET directly fabricated on a semi-insulating GaAs substrate. In addition to AlAs, and AlxGa1-xAs materials, new materials grown at low temperatures such as LT-AlGaAs were used in heterojunction FET structures as a back wall barrier. Low drain leakage currents were achieved using AlAs and LT-AlGaAs as the back wall barriers. Some fundamental properties regarding these materials are of great interest and in need of further characterization. Part of the work in this dissertation was devoted to the characterization of device performance for different structure designs at elevated temperatures. The suitability of GaAs-based and gallium arsenide (GaN)-based MESFET

  1. Radial profiles of neutron emission from ohmic discharges in JET

    International Nuclear Information System (INIS)

    Cheetham, A.; Gottardi, N.; Jarvis, O.N.

    1989-01-01

    Neutron emission profiles from several ohmically heated discharges have been studied using a variety of analytical techniques to extract the ion temperature profiles which are found to agree well, both in shape and magnitude, with the electron temperature profiles as measured by the LIDAR Thomson scattering diagnostic. (author) 7 refs., 3 figs

  2. Parametric studies in ohmically heated plasmas in Heliotron E

    International Nuclear Information System (INIS)

    Mutoh, T.; Besshou, S.; Ijiri, Y.

    1983-01-01

    Parametric studies of volume averaged electron temperature and global electron energy confinement time /tau/epsilon /SUB e/ of ohmically heated Heliotron E plasmas have been performed using a data acquisition computer system. The scaling laws α (I /SUB OH/ x B/n /SUB e/) /SUP 1/2/ and /tau/epsilon /SUB e/ α n /SUP -1/2/ /SUB e/ x B/I /SUP 3/2/ /SUB OH/ are obtained directly by a code which fits the exponents of the plasma parameters ponents of the plasma parameters to the electron temperature and confinement time. The ohmically heated plasma confinement time /tau/epsilon /SUB e/ is shown to be related to the drift parameters xi (= V /SUB De/ /V /SUB Te/). The dependences of the energy confinement time on other plasma parameters is also presented. An investigation is made of the correlation between MHD activity and the confinement

  3. Confinement requirements for OHMIC-compressive ignition of a Spheromak plasma

    International Nuclear Information System (INIS)

    Olson, R.; Gilligan, J.; Miley, G.

    1980-01-01

    The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression along were sufficient to heat the plasmoids to an ignition temperature. In the present work, we will study the transport conditions under which a Spheromak plasmoid could be expected to reach ignition via a combination of ohmic and compression heating

  4. Confinement requirements for ohmic-compressive ignition of a Spheromak plasma

    International Nuclear Information System (INIS)

    Olson, R.E.; Miley, G.H.

    1981-01-01

    The Moving Plasmoid Reactor (MPR) is an attractive alternative magnetic fusion scheme in which Spheromak plasmoids are envisioned to be formed, compressed, burned, and expanded as the plasmoids translate through a series of linear reactor modules. Although auxiliary heating of the plasmoids may be possible, the MPR scenario would be especially interesting if ohmic decay and compression alone is sufficient to heat the plasmoids to an ignition temperature. In the present work, we examine the transport conditions under which a Spheromak plasmoid can be expected to reach ignition via a combination of ohmic and compression heating

  5. Intermittent fluctuations in the Alcator C-Mod scrape-off layer for ohmic and high confinement mode plasmas

    Science.gov (United States)

    Garcia, O. E.; Kube, R.; Theodorsen, A.; LaBombard, B.; Terry, J. L.

    2018-05-01

    Plasma fluctuations in the scrape-off layer of the Alcator C-Mod tokamak in ohmic and high confinement modes have been analyzed using gas puff imaging data. In all cases investigated, the time series of emission from a single spatially resolved view into the gas puff are dominated by large-amplitude bursts, attributed to blob-like filament structures moving radially outwards and poloidally. There is a remarkable similarity of the fluctuation statistics in ohmic plasmas and in edge localized mode-free and enhanced D-alpha high confinement mode plasmas. Conditionally averaged waveforms have a two-sided exponential shape with comparable temporal scales and asymmetry, while the burst amplitudes and the waiting times between them are exponentially distributed. The probability density functions and the frequency power spectral densities are similar for all these confinement modes. These results provide strong evidence in support of a stochastic model describing the plasma fluctuations in the scrape-off layer as a super-position of uncorrelated exponential pulses. Predictions of this model are in excellent agreement with experimental measurements in both ohmic and high confinement mode plasmas. The stochastic model thus provides a valuable tool for predicting fluctuation-induced plasma-wall interactions in magnetically confined fusion plasmas.

  6. Mathematical model of solid food pasteurization by ohmic heating: influence of process parameters.

    Science.gov (United States)

    Marra, Francesco

    2014-01-01

    Pasteurization of a solid food undergoing ohmic heating has been analysed by means of a mathematical model, involving the simultaneous solution of Laplace's equation, which describes the distribution of electrical potential within a food, the heat transfer equation, using a source term involving the displacement of electrical potential, the kinetics of inactivation of microorganisms likely to be contaminating the product. In the model, thermophysical and electrical properties as function of temperature are used. Previous works have shown the occurrence of heat loss from food products to the external environment during ohmic heating. The current model predicts that, when temperature gradients are established in the proximity of the outer ohmic cell surface, more cold areas are present at junctions of electrodes with lateral sample surface. For these reasons, colder external shells are the critical areas to be monitored, instead of internal points (typically geometrical center) as in classical pure conductive heat transfer. Analysis is carried out in order to understand the influence of pasteurisation process parameters on this temperature distribution. A successful model helps to improve understanding of these processing phenomenon, which in turn will help to reduce the magnitude of the temperature differential within the product and ultimately provide a more uniformly pasteurized product.

  7. Effects of Ohmic Heating on Microbial Counts and Denaturatiuon of Proteins in Milk

    OpenAIRE

    SUN, Huixian; KAWAMURA, Shuso; HIMOTO, Jun-ichi; ITOH, Kazuhiko; WADA, Tatsuhiko; KIMURA, Toshinori

    2008-01-01

    The aim of this study was to compare the inactivation effects of ohmic heating (internal heating by electric current) and conventional heating (external heating by hot water) on viable aerobes and Streptococcus thermophilus 2646 in milk under identical temperature history conditions. The effects of the two treatments on quality of milk were also compared by assessing degrees of protein denaturation in raw and sterilized milk (raw milk being sterilized by ohmic heating or conventional heating)...

  8. Start-up of the ohmic phase in JET

    International Nuclear Information System (INIS)

    Tanga, A.; Christiansen, J.P.; Cordey, J.G.; Ejima, S.; Kellman, A.; Lazzaro, E.; Lomas, P.J.; Thomas, P.R.

    1985-01-01

    JET has been designed to permit the study of plasmas in which alphaparticle heating is a significant part of the power balance. In order to have a sufficient thermonuclear yield and to trap the resulting alphaparticles, JET is similar in its dimensions and plasma current to the next generation of reactor-like devices such as NET, FER and INTOR. For this reason, the authors see the results from the study of the start-up of ohmically heated plasmas in JET as highly relevant. Discussed is the range that has been achieved in all major parameters with ohmic heating. Experiences with the wall conditioning technique and the results of ion cyclotron heating experiments in JET are outlined. This paper also describes the stages of plasma formation, current rise and ohmic flat-top

  9. Effect of milk fat content on the performance of ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica Serovar Typhimurium and Listeria monocytogenes.

    Science.gov (United States)

    Kim, S-S; Kang, D-H

    2015-08-01

    The effect of milk fat content on ohmic heating compared to conventional heating for inactivation of food-borne pathogens was investigated. Sterile cream was mixed with sterile buffered peptone water and adjusted to 0, 3, 7, 10% (w/v) milk fat content. These samples with varying fat content were subjected to ohmic and conventional heating. The effect of milk fat on temperature increase and electrical conductivity were investigated. Also, the protective effect of milk fat on the inactivation of foodborne pathogens was studied. For conventional heating, temperatures of samples increased with time and were not significantly (P > 0.05) different regardless of fat content. Although the inactivation rate of Escherichia coli O157:H7, Salmonella Typhimurium and L. monocytogens decreased in samples of 10% fat content, a protective effect was not observed for conventional heating. In contrast with conventional heating, ohmic heating was significantly affected by milk fat content. Temperature increased more rapidly with lower fat content for ohmic heating due to higher electrical conductivity. Nonuniform heat generation of nonhomogeneous fat-containing samples was verified using a thermal infrared camera. Also, the protective effect of milk fat on E. coli O157:H7 and Listeria monocytogenes was observed in samples subjected to ohmic heating. These results indicate that food-borne pathogens can survive in nonhomogeneous fat-containing foods subjected to ohmic heating. Therefore, more attention is needed regarding ohmic heating than conventional heating for pasteurizing fat-containing foods. The importance of adequate pasteurization for high milk fat containing foods was identified. © 2015 The Society for Applied Microbiology.

  10. Technology, applications and modelling of ohmic heating: a review.

    Science.gov (United States)

    Varghese, K Shiby; Pandey, M C; Radhakrishna, K; Bawa, A S

    2014-10-01

    Ohmic heating or Joule heating has immense potential for achieving rapid and uniform heating in foods, providing microbiologically safe and high quality foods. This review discusses the technology behind ohmic heating, the current applications and thermal modeling of the process. The success of ohmic heating depends on the rate of heat generation in the system, the electrical conductivity of the food, electrical field strength, residence time and the method by which the food flows through the system. Ohmic heating is appropriate for processing of particulate and protein rich foods. A vast amount of work is still necessary to understand food properties in order to refine system design and maximize performance of this technology in the field of packaged foods and space food product development. Various economic studies will also play an important role in understanding the overall cost and viability of commercial application of this technology in food processing. Some of the demerits of the technology are also discussed.

  11. HIGH-TEMPERATURE IONIZATION IN PROTOPLANETARY DISKS

    Energy Technology Data Exchange (ETDEWEB)

    Desch, Steven J. [School of Earth and Space Exploration, Arizona State University, P.O. Box 871404, Tempe, AZ 85287-1404 (United States); Turner, Neal J. [Jet Propulsion Laboratory, Mail Stop 169-506, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, CA 91109 (United States)

    2015-10-01

    We calculate the abundances of electrons and ions in the hot (≳500 K), dusty parts of protoplanetary disks, treating for the first time the effects of thermionic and ion emission from the dust grains. High-temperature ionization modeling has involved simply assuming that alkali elements such as potassium occur as gas-phase atoms and are collisionally ionized following the Saha equation. We show that the Saha equation often does not hold, because free charges are produced by thermionic and ion emission and destroyed when they stick to grain surfaces. This means the ionization state depends not on the first ionization potential of the alkali atoms, but rather on the grains’ work functions. The charged species’ abundances typically rise abruptly above about 800 K, with little qualitative dependence on the work function, gas density, or dust-to-gas mass ratio. Applying our results, we find that protoplanetary disks’ dead zone, where high diffusivities stifle magnetorotational turbulence, has its inner edge located where the temperature exceeds a threshold value ≈1000 K. The threshold is set by ambipolar diffusion except at the highest densities, where it is set by Ohmic resistivity. We find that the disk gas can be diffusively loaded onto the stellar magnetosphere at temperatures below a similar threshold. We investigate whether the “short-circuit” instability of current sheets can operate in disks and find that it cannot, or works only in a narrow range of conditions; it appears not to be the chondrule formation mechanism. We also suggest that thermionic emission is important for determining the rate of Ohmic heating in hot Jupiters.

  12. HIGH-TEMPERATURE IONIZATION IN PROTOPLANETARY DISKS

    International Nuclear Information System (INIS)

    Desch, Steven J.; Turner, Neal J.

    2015-01-01

    We calculate the abundances of electrons and ions in the hot (≳500 K), dusty parts of protoplanetary disks, treating for the first time the effects of thermionic and ion emission from the dust grains. High-temperature ionization modeling has involved simply assuming that alkali elements such as potassium occur as gas-phase atoms and are collisionally ionized following the Saha equation. We show that the Saha equation often does not hold, because free charges are produced by thermionic and ion emission and destroyed when they stick to grain surfaces. This means the ionization state depends not on the first ionization potential of the alkali atoms, but rather on the grains’ work functions. The charged species’ abundances typically rise abruptly above about 800 K, with little qualitative dependence on the work function, gas density, or dust-to-gas mass ratio. Applying our results, we find that protoplanetary disks’ dead zone, where high diffusivities stifle magnetorotational turbulence, has its inner edge located where the temperature exceeds a threshold value ≈1000 K. The threshold is set by ambipolar diffusion except at the highest densities, where it is set by Ohmic resistivity. We find that the disk gas can be diffusively loaded onto the stellar magnetosphere at temperatures below a similar threshold. We investigate whether the “short-circuit” instability of current sheets can operate in disks and find that it cannot, or works only in a narrow range of conditions; it appears not to be the chondrule formation mechanism. We also suggest that thermionic emission is important for determining the rate of Ohmic heating in hot Jupiters

  13. Structural and electrical characterization of AuPtAlTi ohmic contacts to AlGaN/GaN with varying annealing temperature and Al content

    OpenAIRE

    Fay, Mike W.; Han, Y.; Brown, Paul D.; Harrison, Ian; Hilton, K.P.; Munday, A.; Wallis, D.; Balmer, R.S.; Uren, M.J.; Martin, T.

    2008-01-01

    The effect of varying annealing temperature and Al layer thickness on the structural and electrical characteristics of AuPtAlTi/AlGaN/GaN ohmic contact structures has been systematically investigated. The relationship between annealing temperature, Al content, interfacial microstructure, surface planarity and contact resistance is\\ud examined. In particular, the presence of a detrimental low temperature Pt-Al reaction is identified. This is implicated in both the requirement for a higher Al:T...

  14. Apple snack enriched with L-arginine using vacuum impregnation/ohmic heating technology.

    Science.gov (United States)

    Moreno, Jorge; Echeverria, Julian; Silva, Andrea; Escudero, Andrea; Petzold, Guillermo; Mella, Karla; Escudero, Carlos

    2017-07-01

    Modern life has created a high demand for functional food, and in this context, emerging technologies such as vacuum impregnation and ohmic heating have been applied to generate functional foods. The aim of this research was to enrich the content of the semi-essential amino acid L-arginine in apple cubes using vacuum impregnation, conventional heating, and ohmic heating. Additionally, combined vacuum impregnation/conventional heating and vacuum impregnation/ohmic heating treatments were evaluated. The above treatments were applied at 30, 40 and 50  ℃ and combined with air-drying at 40 ℃ in order to obtain an apple snack rich in L-arginine. Both the impregnation kinetics of L-arginine and sample color were evaluated. The impregnated samples created using vacuum impregnation/ohmic heating at 50 ℃ presented a high content of L-arginine, an effect attributed primarily to electropermeabilization. Overall, vacuum impregnation/ohmic heating treatment at 50 ℃, followed by drying at 40 ℃, was the best process for obtaining an apple snack rich in L-arginine.

  15. Energy confinement in Ohmic H-mode in TUMAN-3M

    International Nuclear Information System (INIS)

    Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Lebedev, S.V.; Levin, L.S.; Tukachinsky, A.S.

    1997-01-01

    The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. In 1994 new vacuum vessel had been installed in TUMAN-3 tokamak. The vessel has the same sizes as old one (R 0 =0.55 m, a 1 =0.24 m). New vessel was designed to reduce mechanical stresses in the walls during B T ramp phase of a shot. Therefore modified device - TUMAN-3M is able to produce higher B T and I p , up to 2 T and 0.2 MA respectively. During first experimental run device was operated in Ohmic Regime. In these experiments the possibility to achieve Ohmic H-mode was studied. The study of the parametric dependencies of the energy confinement time in both OH and Ohmic H-mode was performed. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Energy confinement time in TUMAN-3/TUMAN-3M Ohmic H-mode has revealed good agreement with JET/DIII-D/ASDEX scaling for ELM-free H-mode, resulting in very long τ E at the high plasma current discharges. (author)

  16. Power balance in an Ohmically heated fusion reactor

    International Nuclear Information System (INIS)

    Christiansen, J.P.; Roberts, K.V.

    1982-01-01

    A simplified power-balance equation (zero-dimensional model) is used to study the performance of an Ohmically heated fusion reactor with emphasis on a pulsed reversed-field pinch concept (RFP). The energy confinement time tausub(E) is treated as an adjustable function, and empirical tokamak scaling laws are employed in the numerical estimates, which are supplemented by 1-D ATHENE code calculations. The known heating rates and energy losses are represented by the net energy replacement time tausub(W), which is exhibited as a surface in density (n) and temperature (T) space with a saddle point (nsub(*), Tsub(*)), the optimum ignition point. It is concluded that i) ignition by Ohmic heating is more practicable for the RFP reactor than for a tokamak reactor with the same tausub(E), (ii) if at fixed current the minor radius can be reduced or at fixed minor radius the current can be increased, then it is found that Ohmic ignition becomes more likely when present tokamak scaling laws are used. More definitive estimates require, however, a knowledge of tausub(E), which can only be obtained by establishing a reliable set of experimental RFP scaling laws and, in particular, by extending RFP experiments closer to the reactor regime. (author)

  17. Transport simulations of ohmic TFTR experiments with profile-consistent microinstability-based models for chi/sub e/ and chi/sub i/

    International Nuclear Information System (INIS)

    Redi, M.H.; Tang, W.M.; Efthimion, P.C.; Mikkelsen, D.R.; Schmidt, G.L.

    1987-03-01

    Transport simulations of ohmically heated TFTR experiments with recently developed profile-consistent microinstability models for the anomalous thermal diffusivities, chi/sub e/ and chi/sub i/, give good agreement with experimental data. The steady-state temperature profiles and the total energy confinement times, tau/sub e/, were found to agree for each of the ohmic TFTR experiments simulated, including three high radiation cases and two plasmas fueled by pellet injection. Both collisional and collisionless models are tested. The trapped-electron drift wave microinstability model results are consistent with the thermal confinement of large plasma ohmic experiments on TFTR. We also find that transport due to the toroidal ion temperature gradient (eta/sub i/) modes can cause saturation in tau/sub E/ at the highest densities comparable to that observed on TFTR and equivalent to a neoclassical anomaly factor of 3. Predictions based on stabilized eta/sub i/-mode-driven ion transport are found to be in agreement with the enhanced global energy confinement times for pellet-fueled plasmas. 33 refs., 26 figs., 4 tabs

  18. Optimized design of polarizers with low ohmic loss and any polarization state for the 28 GHz QUEST ECH/ECCD system

    Energy Technology Data Exchange (ETDEWEB)

    Tsujimura, Toru Ii, E-mail: tsujimura.tohru@nifs.ac.jp [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan); Idei, Hiroshi [Research Institute for Applied Mechanics, Kyushu University, Kasuga 816-8580 (Japan); Kubo, Shin; Kobayashi, Sakuji [National Institute for Fusion Science, National Institutes of Natural Sciences, Toki 509-5292 (Japan)

    2017-01-15

    Highlights: • Ohmic loss was calculated on the grooved mirror surface in simulated polarizers. • Polarizers with a low ohmic loss feature were optimally designed for 28 GHz. • Smooth rounded-rectangular grooves were made by mechanical machining. • The designed polarizers can realize all polarization states. - Abstract: In a high-power long-pulse millimeter-wave transmission line for electron cyclotron heating and current drive (ECH/ECCD), the ohmic loss on the grooved mirror surface of polarizers is one of the important issues for reducing the transmission loss. In this paper, the ohmic loss on the mirror surface is evaluated in simulated real-scale polarizer miter bends for different groove parameters under a linearly-polarized incident wave excitation. The polarizers with low ohmic loss are optimally designed for a new 28 GHz transmission line on the QUEST spherical tokamak. The calculated optimum ohmic loss is restricted to only less than 1.5 times as large as the theoretical loss for a copper flat mirror at room temperature. The copper rounded-rectangular grooves of the polarizers were relatively easy to make smooth in mechanical machining and the resultant surface roughness was not more than 0.15 μm, which is only 0.38 times as large as the skin depth. The combination of the designed elliptical polarizer and the polarization rotator can also realize any polarization state of the reflected wave.

  19. Ohmic Heating Assisted Lye Peeling of Pears.

    Science.gov (United States)

    Gupta, Sarvesh; Sastry, Sudhir K

    2018-05-01

    Currently, high concentrations (15% to 18%) of lye (sodium hydroxide) are used in peeling pears, constituting a wastewater handling and disposal problem for fruit processors. In this study, the effect of ohmic heating on lye peeling of pears was investigated. Pears were peeled using 0.5%, 1%, 2%, and 3% NaOH under different electric field strengths at two run times and their peeled yields were compared to that obtained at 2% and 18% NaOH with conventional heating. Results revealed that ohmic heating results in greater than 95% peeled yields and the best peel quality at much lower concentrations of lye (2% NaOH at 532 V/m and 3% NaOH at 426 and 479 V/m) than those obtained under conventional heating conditions. Treatment times of 30 and 60 s showed no significant differences. Within the studied range, the effects of increasing field strength yielded no significant additional benefits. These results confirm that the concentration of lye can be significantly lowered in the presence of ohmic heating to achieve high peeled yields and quality. Our work shows that lye concentrations can be greatly reduced while peeling pears, resulting in significant savings in use of caustic chemicals, reduced costs for effluent treatment and waste disposal. © 2018 Institute of Food Technologists®.

  20. Kinetics of Maillard reactions in model infant formula during UHT treatment using a static batch ohmic heater

    OpenAIRE

    Roux , Stéphanie; Courel , Mathilde; Ait-Ameur , Lamia; Birlouez-Aragon , Inès; Pain , Jean-Pierre

    2009-01-01

    The impact of a UHT treatment on a model infant formula was examined by assessing the advancement of Maillard reactions during a thermal treatment by ohmic heating. The heating and holding steps of the heat treatment were carried out in a static batch ohmic heater equipped with a nitrogen counter-pressure system, allowing reaching five temperature levels from 100 to 140 °C. A heat treatment was characterized by monitoring a holding time at a given temperature. Samples were taken during heatin...

  1. Effect of composition on the polarization and ohmic resistances of ...

    Indian Academy of Sciences (India)

    2017-06-09

    Jun 9, 2017 ... Solid oxide fuel cell; composite cathodes; polarization resistance; ohmic resistance; ... of Oad on LSM, (iii) conversion of Oad into oxygen ion ... ions need to flow through the low temperature sintered ..... TPB's are present) suggest the formation of face-to-face con- ..... calculated using the following equation.

  2. An investigation on the application of ohmic heating of cold water shrimp and brine mixtures

    DEFF Research Database (Denmark)

    Pedersen, Søren Juhl; Feyissa, Aberham Hailu; Brøkner Kavli, Sissel Therese

    2016-01-01

    Cooking is an important unit-operation in the production of cooked and peeled shrimps. The present study explores the feasibility of using ohmic heating for cooking of shrimps. The focus is on investigating the effects of different process parameters on heating time and quality of ohmic cooked...... shrimps (Pandalus Borelias). The shrimps were heated to a core temperature of 72 °C in a brine solution using a small batch ohmic heater. Three experiments were performed: 1) a comparative analyses of the temperature development between different sizes of shrimps and thickness (head and tail region...... of the shrimp) over varying salt concentrations (10 kg m−3 to 20 kg m−3) and electric field strengths (1150 V m−1 to 1725 V m−1) with the heating time as the response; 2) a 2 level factorial experiment for screening the impact of processing conditions using electric field strengths of 1250 V m−1 and 1580 V m−1...

  3. Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

    International Nuclear Information System (INIS)

    Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P

    2004-01-01

    Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z eff . Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values

  4. Modelling of Ohmic discharges in ADITYA tokamak using the Tokamak Simulation Code

    Energy Technology Data Exchange (ETDEWEB)

    Bandyopadhyay, I; Ahmed, S M; Atrey, P K; Bhatt, S B; Bhattacharya, R; Chaudhury, M B; Deshpande, S P; Gupta, C N; Jha, R; Joisa, Y Shankar; Kumar, Vinay; Manchanda, R; Raju, D; Rao, C V S; Vasu, P [Institute for Plasma Research, Bhat, Gandhinagar 382428 (India)

    2004-09-01

    Several Ohmic discharges of the ADITYA tokamak are simulated using the Tokamak Simulation Code (TSC), similar to that done earlier for the TFTR tokamak. Unlike TFTR, the dominant radiation process in ADITYA is through impurity line radiation. TSC can follow the experimental plasma current and position to very good accuracy. The thermal transport model of TSC including impurity line radiation gives a good match of the simulated results with experimental data for the Ohmic flux consumption, electron temperature and Z{sub eff}. Even the simulated magnetic probe signals are in reasonably good agreement with the experimental values.

  5. Physicochemical properties of masa and corn tortilla made by ohmic ...

    African Journals Online (AJOL)

    Instant corn flour obtained by ohmic heating (OHICF) was used to prepare masa and tortillas. In this study, the effect of average particle size, moisture, and the final temperature on the physicochemical properties of masa and tortillas elaborated from OHICF was evaluated and were compared with flour obtained by the ...

  6. Low-resistance and highly transparent Ag/IZO ohmic contact to p-type GaN

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Han-Ki, E-mail: imdlhkkim@khu.ac.k [Department of Display Materials Engineering, Kyung Hee University, 1 Seochoen-dong, Yongin-si, Gyeonggi-do 446-701 (Korea, Republic of); Yi, Min-Su [Department of Materials Science and Engineering, Kyungpook National University, Sangju, Gyeongbuk, 742-711 (Korea, Republic of); Lee, Sung-Nam [Department of Engineering in Energy and Applied Chemistry, Silla University, Busan, 617-736 (Korea, Republic of)

    2009-05-29

    The electrical, structural, and optical characteristics of Ag/ZnO-doped In{sub 2}O{sub 3} (IZO) ohmic contacts to p-type GaN:Mg (2.5 x 10{sup 17} cm{sup -3}) were investigated. The Ag and IZO (10 nm/50 nm) layers were prepared by thermal evaporation and linear facing target sputtering, respectively. Although the as-deposited and 400 {sup o}C annealed samples showed rectifying behavior, the 500 and 600 {sup o}C annealed samples showed linear I-V characteristics indicative of the formation of an ohmic contact. The annealing of the contact at 600 {sup o}C for 3 min in a vacuum ({approx} 10{sup -3} Torr) resulted in the lowest specific contact resistivity of 1.8 x 10{sup -4} {Omega}.cm{sup 2} and high transparency of 78% at a wavelength of 470 nm. Using Auger electron spectroscopy, depth profiling and synchrotron X-ray scattering analysis, we suggested a possible mechanism to explain the annealing dependence of the electrical properties of the Ag/IZO contacts.

  7. Theoretical scaling law for ohmically heated tokamaks

    International Nuclear Information System (INIS)

    Minardi, E.

    1981-06-01

    The electrostatic drift instability arising from the reduction of shear damping, due to toroidal effects, is assumed to be the basic source of the anomalous electron transport in tokamaks. The Maxwellian population of electrons constitutes a medium whose adiabatic nonlinear reaction to the instability (described in terms of an effective dielectric constant of the medium) determines the stationary electrostatic fluctuation level in marginally unstable situations. The existence of a random electrostatic potenial implies a fluctuating current of the Maxwellian electrons which creates a random magnetic field and a stocasticization of a magnetic configuration. The application of recent results allows the calculation of the realted radial electron transport. It is found that the confinement time under stationary ohmic conditions scales as n Tsub(i)sup( - 1/2) and is proportional roughly to the cube of the geometric dimenisions. Moreover, it is deduced that the loop voltage is approximateley the same for all tokamaks, irrespective of temperature and density and to a large extent, also of geometrical conditions. Thes results are characteristic of the ohmic stationary regime and can hardly be extrapolated to order heating regimes. (orig.)

  8. Schottky and Ohmic Au contacts on GaAs: Microscopic and electrical investigation

    International Nuclear Information System (INIS)

    Liliental-Weber, Z.; Gronsky, R.; Washburn, J.; Newman, N.; Spicer, W.E.; Weber, E.R.

    1986-01-01

    We report here a systematic study which uses electrical device measurements and transmission electron microscopy (TEM) methods to investigate the electrical, morphological, and structural properties of Au/GaAs Schottky diodes. The electrical characteristics of Au diodes formed on atomically clean and air-exposed GaAs(110) surfaces are found to change from rectifying to Ohmic behavior after annealing above the Au--Ga eutectic temperature (360 0 C). This change is shown to be due to an Ohmic-like contact at the periphery of the device. TEM studies of these structures indicate that the Ohmic peripheral current pathway can be correlated with the formation of near surface Ga-rich Au crystallites at the diode circumference upon annealing. Further evidence of the correlation of the Ohmic electrical characteristics with the morphology of the periphery comes from data which indicate that the removal of these Au crystallites by mesa etching is also accompanied with the elimination of the Ohmic current. The morphology of the overlayer was found to depend strongly on annealing and surface treatment. TEM indicates that the interface is flat and abrupt for all unannealed diodes, as well as for annealed diodes formed on atomically clean surfaces. For annealed diodes formed on the air-exposed surfaces, the metal--semiconductor interface contains large metallic protrusions extending up to several hundred angstroms into the semiconductor. For comparison to practical structures, the morphology of annealed diodes formed using typical commercial processing technology [i.e., formed on chemically prepared (100) surfaces annealed in forming gas] was also investigated using TEM. The interface for these structures is more complex than interfaces formed on the atomically clean and air-exposed cleaved (110) surfaces

  9. Energy Confinement of both Ohmic and LHW Plasma on EAST

    International Nuclear Information System (INIS)

    Yang Yao; Gao Xiang

    2011-01-01

    Study on the characters of energy confinement in both Ohmic and lower hybrid wave (LHW) discharges on EAST is conducted and the linear Ohmic confinement (LOC), saturated ohmic confinement (SOC) and improved Ohmic confinement (IOC) regimes are investigated in this paper. It is observed that an improved confinement mode characterized by both a drop of D α line intensity and an increase in line average density can be triggered by a gas puffing pulse. (magnetically confined plasma)

  10. Ohmic losses in coaxial resonators with longitudinal inner-outer corrugation

    Energy Technology Data Exchange (ETDEWEB)

    Shenyong Hou, A. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Yangtze Normal University, Chongqing 408001 (China); Sheng Yu, B.; Hongfu Li, C.; Qixiang Zhao, D. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Xiang Li, E. [Terahertz Science and Technology Research Center, University of Electronics Science and Technology of China, Chengdu 610054 (China); Queen Mary University of London, London E1 4NS (United Kingdom)

    2013-05-15

    In this paper, a coaxial resonator with longitudinal inner-outer corrugation is introduced. Its eigen-equation and expression of ohmic losses are derived. Ohmic losses in the cavity are investigated. Results show that ohmic losses in the outer and inner conductors share a similar variation trend, while the former is larger than the later. What's more, changes of the inner and outer slot depth and width induce different variations of ohmic losses on the surface of the inner and outer conductors.

  11. Improvement of Metal-Graphene Ohmic Contact Resistance in Bilayer Epitaxial Graphene Devices

    International Nuclear Information System (INIS)

    He Ze-Zhao; Yang Ke-Wu; Yu Cui; Li Jia; Liu Qing-Bin; Lu Wei-Li; Feng Zhi-Hong; Cai Shu-Jun

    2015-01-01

    We report on an improved metal-graphene ohmic contact in bilayer epitaxial graphene on a SiC substrate with contact resistance below 0.1 ω·mm. Monolayer and bilayer epitaxial graphenes are prepared on a 4H-SiC substrate in this work. Their contact resistances are measured by a transfer length method. An improved photoresist-free device fabrication method is used and is compared with the conventional device fabrication method. Compared with the monolayer graphene, the contact resistance R c of bilayer graphene improves from an average of 0.24 ω·mm to 0.1 ω·mm. Ohmic contact formation mechanism analysis by Landauer's approach reveals that the obtained low ohmic contact resistance in bilayer epitaxial graphene is due to their high carrier density, high carrier transmission probability, and p-type doping introduced by contact metal Au. (paper)

  12. Ultralow nonalloyed Ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth

    International Nuclear Information System (INIS)

    Dasgupta, Sansaptak; Nidhi,; Brown, David F.; Wu, Feng; Keller, Stacia; Speck, James S.; Mishra, Umesh K.

    2010-01-01

    Ultralow Ohmic contact resistance and a self-aligned device structure are necessary to reduce the effect of parasitic elements and obtain higher f t and f max in high electron mobility transistors (HEMTs). N-polar (0001) GaN HEMTs, offer a natural advantage over Ga-polar HEMTs, in terms of contact resistance since the contact is not made through a high band gap material [Al(Ga)N]. In this work, we extend the advantage by making use of polarization induced three-dimensional electron-gas through regrowth of graded InGaN and thin InN cap in the contact regions by plasma (molecular beam epitaxy), to obtain an ultralow Ohmic contact resistance of 27 Ω μm to a GaN 2DEG.

  13. Formation of an internal transport barrier in the ohmic H-mode in the TUMAN-3M tokamak

    International Nuclear Information System (INIS)

    Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Zhubr, N.A.; Kornev, V.A.; Krikunov, S.V.; Lebedev, S.V.; Levin, L.S.; Razdobarin, G.T.; Rozhdestvensky, V.V.; Smirnov, A.I.; Tukachinsky, A.S.; Yaroshevich, S.P.

    2000-01-01

    In experiments on studying the ohmic H-mode in the TUMAN-3M tokamak, it is found that, in high-current (I p ∼ 120-170 kA) discharges, a region with high electron-temperature and density gradients is formed in the plasma core. In this case, the energy confinement time τ E attains 9-18 ms, which is nearly twice as large as that predicted by the ELM-free ITER-93H scaling. This is evidence that the internal transport barrier in a plasma can exist without auxiliary heating. Calculations of the effective thermal diffusivity by the ASTRA transport code demonstrate a strong suppression of heat transport in the region where the temperature and density gradients are high

  14. Empirical scaling for present Ohmically heated tokamaks

    International Nuclear Information System (INIS)

    Daughney, C.

    1975-01-01

    Experimental results from the Adiabatic Toroidal Compressor (ATC) tokamak are used to obtain empirical scaling laws for the average electron temperature and electron energy confinement time as functions of the average electron density, the effective ion charge, and the plasma current. These scaling laws are extended to include dependence upon minor and major plasma radius and toroidal field strength through a comparison of the various tokamaks described in the literature. Electron thermal conductivity is the dominant loss process for the ATC tokamak. The parametric dependences of the observed electron thermal conductivity are not explained by present theoretical considerations. The electron temperature obtained with Ohmic heating is shown to be a function of current density - which will not be increased in the next generation of large tokamaks. However, the temperature dependence of the electron energy confinement time suggests that significant improvement in confinement time will be obtained with supplementary electron heating. (author)

  15. Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

    International Nuclear Information System (INIS)

    Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

    2001-01-01

    An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 =53 cm, a l =22 cm - circular limiter configuration, B t ≤0.7T, I p ≤175 kA, ≤6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r=0.5a and r=0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0 % and β N of 2 were achieved. The β N limit achieved is 'soft' (nondisruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

  16. Internal transport barrier and β limit in ohmically heated plasma in TUMAN-3M

    International Nuclear Information System (INIS)

    Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.

    1999-01-01

    An Internal Transport Barrier (ITB) was found in ohmically heated plasma in TUMAN-3M (R 0 = 53 cm, a l = 22 cm - circular limiter configuration, B t ≤ 0.7 T, I p ≤ 175 kA, ≤ 6.0·10 19 m -3 ). The barrier reveals itself as a formation of a steep gradient on electron temperature and density radial profiles. The regions with reduced diffusion and electron thermal diffusivity are in between r = 0.5a and r = 0.7a. The ITB appears more frequently in the shots with higher plasma current. At lower currents (I p N limit in the ohmically heated plasma are presented. Stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with the fast Current Ramp-Down in the ohmic H-mode. Maximum value of β T of 2.0% and β N of 2 were achieved. The β N limit achieved is 'soft' (non-disruptive) limit. The stored energy slowly decays after the Current Ramp-Down. No correlation was found between beta restriction and MHD phenomena. (author)

  17. Neoclassical MHD equilibria with ohmic current

    International Nuclear Information System (INIS)

    Tokuda, Shinji; Takeda, Tatsuoki; Okamoto, Masao.

    1989-01-01

    MHD equilibria of tokamak plasmas with neoclassical current effects (neoclassical conductivity and bootstrap current) were calculated self-consistently. Neoclassical effects on JFT-2M tokamak plasmas, sustained by ohmic currents, were studied. Bootstrap currents flow little for L-mode type equilibria because of low attainable values of poloidal beta, β J . H-mode type equilibria give bootstrap currents of 30% ohmic currents for β J attained by JFT-2M and 100% for β J ≥ 1.5, both of which are sufficient to change the current profiles and the resultant MHD equilibria. Neoclassical conductivity which has roughly half value of the classical Spitzer conductivity brings peaked ohmic current profiles to yield low safety factor at the magnetic axis. Neoclassical conductivity reduces the value of effective Z(Z eff ) which is necessary to give the observed one-turn voltage but it needs impurities accumulating at the center when such peaked current profiles are not observed. (author)

  18. Numerical and experimental investigation of GaN-based flip-chip light-emitting diodes with highly reflective Ag/TiW and ITO/DBR Ohmic contacts.

    Science.gov (United States)

    Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Liu, Yingce; Liu, Mengling; Liu, Zongyuan; Gui, Chengqun; Liu, Sheng

    2017-10-30

    We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic contacts. We show that a direct Ohmic contact to p-GaN layer using pure Ag is obtained when annealed at 600°C in N 2 ambient. A TiW diffusion barrier layer covered onto Ag is used to suppress the agglomeration of Ag and thus maintain high reflectance of Ag during high temperature annealing process. We develop a strip-shaped SiO 2 current blocking layer beneath the ITO/DBR to alleviate current crowding occurring in FCLED with ITO/DBR. Owing to negligibly small spreading resistance of Ag, however, our combined numerical and experimental results show that the FCLED with Ag/TiW has a more favorable current spreading uniformity in comparison to the FCLED with ITO/DBR. As a result, the light output power of FCLED with Ag/TiW is 7.5% higher than that of FCLED with ITO/DBR at 350 mA. The maximum output power of the FCLED with Ag/TiW obtained at 305.6 A/cm 2 is 29.3% larger than that of the FCLED with ITO/DBR obtained at 278.9 A/cm 2 . The improvement appears to be due to the enhanced current spreading and higher optical reflectance provided by the Ag/TiW.

  19. Modelling the metal–semiconductor band structure in implanted ohmic contacts to GaN and SiC

    International Nuclear Information System (INIS)

    Pérez-Tomás, A; Fontserè, A; Placidi, M; Jennings, M R; Gammon, P M

    2013-01-01

    Here we present a method to model the metal–semiconductor (M–S) band structure to an implanted ohmic contact to a wide band gap semiconductor (WBG) such as GaN and SiC. The performance and understanding of the M–S contact to a WBG semiconductor is of great importance as it influences the overall performance of a semiconductor device. In this work we explore in a numerical fashion the ohmic contact properties to a WBG semiconductor taking into account the partial ionization of impurities and analysing its dependence on the temperature, the barrier height, the impurity level band energy and carrier concentration. The effect of the M–S Schottky barrier lowering and the Schottky barrier inhomogeneities are discussed. The model is applied to a fabricated ohmic contact to GaN where the M–S band structure can be completely determined. (paper)

  20. Bismuth nanowire growth under low deposition rate and its ohmic contact free of interface damage

    Directory of Open Access Journals (Sweden)

    Ye Tian

    2012-03-01

    Full Text Available High quality bismuth (Bi nanowire and its ohmic contact free of interface damage are quite desired for its research and application. In this paper, we propose one new way to prepare high-quality single crystal Bi nanowires at a low deposition rate, by magnetron sputtering method without the assistance of template or catalyst. The slow deposition growth mechanism of Bi nanowire is successfully explained by an anisotropic corner crossing effect, which is very different from existing explanations. A novel approach free of interface damage to ohmic contact of Bi nanowire is proposed and its good electrical conductivity is confirmed by I-V characteristic measurement. Our method provides a quick and convenient way to produce high-quality Bi nanowires and construct ohmic contact for desirable devices.

  1. TNS superconducting ohmic-heating system

    International Nuclear Information System (INIS)

    Wang, S.T.; Fuja, R.; Kim, S.H.; Kustom, R.L.; Praeg, W.F.; Thompson, K.; Turner, L.R.

    1978-01-01

    The superconducting ohmic-heating (OH) system is the selected design for the General Atomics Co./Argonne National Laboratory TNS tokamak design studies. The key features of the OH system design are: (1) parallel coil connection, (2) better utilization of flux core by embedding support cylinder of the toroidal-field coil within the OH inner radius, (3) independent trim coils for correcting the stray fields, (4) low-loss high-current cryostable cable design and (5) OH coil cycling circuit using a reversing bridge. Detailed designs are presented

  2. W and WSix Ohmic contacts on p- and n-type GaN

    International Nuclear Information System (INIS)

    Cao, X.A.; Ren, F.; Pearton, S.J.; Zeitouny, A.; Eizenberg, M.; Zolper, J.C.; Abernathy, C.R.; Han, J.; Shul, R.J.; Lothian, J.R.

    1999-01-01

    W and WSi Ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300 to 1000 degree C. There is minimal reaction (≤100 Angstrom broadening of the metal/GaN interface) even at 1000 degree C. Specific contact resistances in the 10 -5 Ω cm 2 range are obtained for WSi x on Si-implanted GaN with a peak doping concentration of ∼5x10 20 cm -3 , after annealing at 950 degree C. On p-GaN, leaky Schottky diode behavior is observed for W, WSi x and Ni/Au contacts at room temperature, but true Ohmic characteristics are obtained at 250 - 300 degree C, where the specific contact resistances are, typically, in the 10 -2 Ω cm 2 range. The best contacts for W and WSi x are obtained after 700 degree C annealing for periods of 30 - 120 s. The formation of β-W 2 N interfacial phases appear to be important in determining the contact quality. copyright 1999 American Vacuum Society

  3. Modelling ohmic confinement experiments on the START tokamak

    International Nuclear Information System (INIS)

    Roach, C.M.

    1996-05-01

    Ohmic confinement data from the tight aspect ratio tokamak START has been analysed using the ASTRA transport simulation code. Neoclassical expressions have been modified to describe tight aspect ratio configurations, and the comparison between START data and models of anomalous transport has been made quantitative using the standard χ 2 test from statistics. Four confinement models (T11, Rebut-Lallia-Watkins, Lackner-Gottardi, and Taroni et al's Bohm model) have been compared with the START data. Three of the models are found to simulate START's electron temperature data moderately well, while Taroni et al's Bohm model overestimates electron temperatures in START by an order of magnitude. Thus comparison with START data tends to discriminate against Bohm models; these models are pessimistic or ITER. (author)

  4. Effect of ohmic heating of soymilk on urease inactivation and kinetic analysis in holding time.

    Science.gov (United States)

    Li, Fa-De; Chen, Chen; Ren, Jie; Wang, Ranran; Wu, Peng

    2015-02-01

    To verify the effect of the ohmic heating on the urease activity in the soymilk, the ohmic heating methods with the different electrical field conditions (the frequency and the voltage ranging from 50 to 10 kHz and from 160 to 220 V, respectively) were employed. The results showed that if the value of the urease activity measured with the quantitative spectrophotometry method was lower than 16.8 IU, the urease activity measured with the qualitative method was negative. The urease activity of the sample ohmically heated was significantly lower than that of the sample conventionally heated (P urease inactivation. In addition, the inactivation kinetics of the urease in the soymilk could be described with a biphasic model during holding time at a target temperature. Thus, it was concluded that the urease in the soymilk would contain 2 isoenzymes, one is the thermolabile fraction, the other the thermostable fraction, and that the thermostable isoenzyme could not be completely inactivated when the holding time increased, whether the soymilk was cooked with the conventional method or with the ohmic heating method. Therefore, the electric field had no effect on the inactivation of the thermostable isoenzyme of the urease. © 2015 Institute of Food Technologists®

  5. Potential for use of high-temperature superconductors in fusion reactors

    International Nuclear Information System (INIS)

    Hull, J.R.

    1991-01-01

    The present rate of development of high-temperature superconductors (HTSs) is sufficiently rapid that there may be opportunities for their use in contemporary fusion devices such as the International Thermonuclear Experimental Reactor (ITER). The most likely 1application is for delivering power to the superconducting magnets, especially in substituting for the current leads between the temperatures of 4 K and 77K. A second possible application of HTSs is as a liquid-nitrogen-cooled power bus, connecting the power supplies to the magnets, thus reducing the ohmic heating losses over these relatively long cables. A third potential application of HTSs is as an inner high-field winding of the toroidal field coils that would operate at ∼20 K. While the use of higher temperature magnets offers significant advantages to the reactor system, it is unlikely that tested conductors of this type will be available within the ITER time frame. 23 refs., 2 figs

  6. Compound sawtooth study in ohmically heated TFTR plasmas

    International Nuclear Information System (INIS)

    Yamada, H.; McGuire, K.; Colchin, D.

    1985-09-01

    Compound sawtooth activity has been observed in ohmically heated, high current, high density TFTR plasmas. Commonly called ''double sawteeth,'' such sequences consist of a repetitive series of subordinate relaxations followed by a main relaxation with a different inversion radius. The period of such compound sawteeth can be as long as 100 msec. In other cases, however, no compound sawteeth or bursts of them can be observed in discharges with essentially the same parameters

  7. Indium gallium zinc oxide (IGZO)-based Ohmic contact formation on n-type gallium antimony (GaSb)

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Jeong-Hun; Jung, Hyun-Wook [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-14

    In this paper, Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64 is presented, which is formed at 500 °C by inserting IGZO between metal (Ni) and GaSb. The resulting Ohmic contact is systematically investigated by TOF-SIMS, HSC chemistry simulation, XPS, TEM, AFM, and J–V measurements. Two main factors contributing to the Ohmic contact formation are (1) InSb (or InGaSb) with narrow energy bandgap (providing low electron and hole barrier heights) formed by In diffusion from IGZO and Sb released by Ga oxidation, and (2) free Sb working as traps that induces tunneling current. - Highlights: • We demonstrate Ohmic-like contact on n-type GaSb with on/off-current ratio of 1.64. • The reverse current is increased by low electron barrier height and high TAT current. • The low electron barrier height is achieved by the formation of InGaSb. • Free Sb atoms also work as traps inducing high TAT current.

  8. Nutritional impact of ohmic heating on fruits and vegetables—A review

    Directory of Open Access Journals (Sweden)

    Ranvir Kaur

    2016-12-01

    Full Text Available Ohmic heating, also called electrical resistance heating, joule heating, or electro-conductive heating, is an advanced thermal food processing technique where heat is internally generated in a sample due to electrical resistance when electric current is passed through it. It is a novel technique which provides rapid and uniform heating, resulting in less thermal damage to the food product. According to the recent literature, plant products are most suitable and often used for ohmic heat processing. Beyond heating of fruits and vegetables, the applied electric field under ohmic heating causes various changes in quality and nutritional parameters which include inactivation of enzymes and micro-organisms, degradation of heat-sensitive compounds, changes in cell membranes, viscosity, pH, color, and rheology. Ohmic heating rate depends on the electrical field strength and electrical conductivity of product. This review focuses on various factors affecting the electrical conductivity of fruits and vegetables and the effect of ohmic heating on their quality and nutritional properties.

  9. Ohmic heating of a spheromak to 100 eV

    Energy Technology Data Exchange (ETDEWEB)

    Jarboe, T.R.; Barnes, C.W.; Henins, I.; Hoida, H.W.; Knox, S.O.; Linford, R.K.; Sherwood, A.R.

    1984-01-01

    The first spheromaks with Thomson-scattering-measured electron temperatures of over 100 eV are described. The spheromak is generated by a magnetized coaxial plasma source in a background gas of 30 mTorr of H/sub 2/, and it is stably confined in an oblate 80 cm diam copper mesh flux conserver. The open mesh design allows rapid impurity transport out of the spheromak. The peak temperature, measured using multipoint Thomson scattering, is observed to rise from approximately 25 eV to over 100 eV in about 0.2 msec due to Ohmic heating from the decaying magnetic fields. Density (approx.5 x 10/sup 13/ cm/sup -3/) and magnetic fields (approximately 2 kG) are measured using interferometry and magnetic probes.

  10. Ohmic heating of a spheromak to 100 eV

    International Nuclear Information System (INIS)

    Jarboe, T.R.; Barnes, C.W.; Henins, I.; Hoida, H.W.; Knox, S.O.; Linford, R.K.; Sherwood, A.R.

    1984-01-01

    The first spheromaks with Thomson-scattering-measured electron temperatures of over 100 eV are described. The spheromak is generated by a magnetized coaxial plasma source in a background gas of 30 mTorr of H 2 , and it is stably confined in an oblate 80 cm diam copper mesh flux conserver. The open mesh design allows rapid impurity transport out of the spheromak. The peak temperature, measured using multipoint Thomson scattering, is observed to rise from approximately 25 eV to over 100 eV in about 0.2 msec due to Ohmic heating from the decaying magnetic fields. Density (approx.5 x 10 13 cm -3 ) and magnetic fields (approximately 2 kG) are measured using interferometry and magnetic probes

  11. AlGaN channel field effect transistors with graded heterostructure ohmic contacts

    Science.gov (United States)

    Bajaj, Sanyam; Akyol, Fatih; Krishnamoorthy, Sriram; Zhang, Yuewei; Rajan, Siddharth

    2016-09-01

    We report on ultra-wide bandgap (UWBG) Al0.75Ga0.25N channel metal-insulator-semiconductor field-effect transistors (MISFETs) with heterostructure engineered low-resistance ohmic contacts. The low intrinsic electron affinity of AlN (0.6 eV) leads to large Schottky barriers at the metal-AlGaN interface, resulting in highly resistive ohmic contacts. In this work, we use a reverse compositional graded n++ AlGaN contact layer to achieve upward electron affinity grading, leading to a low specific contact resistance (ρsp) of 1.9 × 10-6 Ω cm2 to n-Al0.75Ga0.25N channels (bandgap ˜5.3 eV) with non-alloyed contacts. We also demonstrate UWBG Al0.75Ga0.25N channel MISFET device operation employing the compositional graded n++ ohmic contact layer and 20 nm atomic layer deposited Al2O3 as the gate-dielectric.

  12. Transport analysis of ohmic, L-mode and improved confinement discharges in FTU

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Marinucci, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Romanelli, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Bracco, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Castaldo, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cocilovo, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Giovannozzi, E [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Leigheb, M [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Monari, G [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Nowak, S [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Sozzi, C [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Tudisco, O [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Cesario, R [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Frigione, D [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Gormezano, C [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Granucci, G [IFP CNR, Via R. Cozzi, 53, 20125 Milano (Italy); Panaccione, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pericoli-Ridolfini, V [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy); Pieroni, L [Associazione Euratom-ENEA sulla Fusione, C.R. Frascati, Via E. Fermi 45, 00044 Frascati (Italy)

    2004-11-01

    A thorough investigation of confinement in Frascati Tokamak Upgrade has been carried out on a new database of ohmic, L-mode and advanced scenario discharges (multiple pellet-fuelled, radiation improved and internal transport barriers (ITBs)) obtained with the available auxiliary heating systems, namely electron cyclotron resonant heating, lower hybrid and ion Bernstein wave. A general agreement of the measured {tau}{sub E} with ITER97 L-mode scaling is found in ohmic and L-mode discharges. An improvement of the energy confinement time ({tau}{sub E}) of up to about 60% over the ITER97 L-mode scaling has been obtained in ITB discharges, together with a reduction in local electron transport in the region of high pressure gradient, and up to about 30% in pellet-fuelled discharges (where {tau}{sub E} as large as {approx}120 ms have been reached). The linear density dependence of {tau}{sub E} in ohmic discharges has been found to extend above the saturation density threshold in pellet-fuelled plasmas.

  13. THREE-DIMENSIONAL ATMOSPHERIC CIRCULATION MODELS OF HD 189733b AND HD 209458b WITH CONSISTENT MAGNETIC DRAG AND OHMIC DISSIPATION

    International Nuclear Information System (INIS)

    Rauscher, Emily; Menou, Kristen

    2013-01-01

    We present the first three-dimensional circulation models for extrasolar gas giant atmospheres with geometrically and energetically consistent treatments of magnetic drag and ohmic dissipation. Atmospheric resistivities are continuously updated and calculated directly from the flow structure, strongly coupling the magnetic effects with the circulation pattern. We model the hot Jupiters HD 189733b (T eq ≈ 1200 K) and HD 209458b (T eq ≈ 1500 K) and test planetary magnetic field strengths from 0 to 30 G. We find that even at B = 3 G the atmospheric structure and circulation of HD 209458b are strongly influenced by magnetic effects, while the cooler HD 189733b remains largely unaffected, even in the case of B = 30 G and super-solar metallicities. Our models of HD 209458b indicate that magnetic effects can substantially slow down atmospheric winds, change circulation and temperature patterns, and alter observable properties. These models establish that longitudinal and latitudinal hot spot offsets, day-night flux contrasts, and planetary radius inflation are interrelated diagnostics of the magnetic induction process occurring in the atmospheres of hot Jupiters and other similarly forced exoplanets. Most of the ohmic heating occurs high in the atmosphere and on the dayside of the planet, while the heating at depth is strongly dependent on the internal heat flux assumed for the planet, with more heating when the deep atmosphere is hot. We compare the ohmic power at depth in our models, and estimates of the ohmic dissipation in the bulk interior (from general scaling laws), to evolutionary models that constrain the amount of heating necessary to explain the inflated radius of HD 209458b. Our results suggest that deep ohmic heating can successfully inflate the radius of HD 209458b for planetary magnetic field strengths of B ≥ 3-10 G.

  14. Period doubling in a model of magnetoconvection with Ohmic heating

    International Nuclear Information System (INIS)

    Osman, M. B. H.

    2000-01-01

    In this work it has been studied an idealized model of rotating nonlinear magneto convection to investigate the effects of Ohmic heating. In the over stable region it was found that Ohmic heating can lead to a period-doubling sequence

  15. Dynamics of the sub-Ohmic spin-boson model: A time-dependent variational study

    International Nuclear Information System (INIS)

    Wu Ning; Duan Liwei; Zhao Yang; Li Xin

    2013-01-01

    The Dirac-Frenkel time-dependent variation is employed to probe the dynamics of the zero temperature sub-Ohmic spin-boson model with strong friction utilizing the Davydov D 1 ansatz. It is shown that initial conditions of the phonon bath have considerable influence on the dynamics. Counterintuitively, even in the very strong coupling regime, quantum coherence features still manage to survive under the polarized bath initial condition, while such features are absent under the factorized bath initial condition. In addition, a coherent-incoherent transition is found at a critical coupling strength α≈ 0.1 for s= 0.25 under the factorized bath initial condition. We quantify how faithfully our ansatz follows the Schrödinger equation, finding that the time-dependent variational approach is robust for strong dissipation and deep sub-Ohmic baths (s≪ 1).

  16. Spectroscopic study of ohmically heated Tokamak discharges

    International Nuclear Information System (INIS)

    Breton, C.; Michelis, C. de; Mattioli, M.

    1980-07-01

    Tokamak discharges interact strongly with the wall and/or the current aperture limiter producing recycling particles, which penetrate into the discharge and which can be studied spectroscopically. Working gas (hydrogen or deuterium) is usually studied observing visible Balmer lines at several toroidal locations. Absolute measurements allow to obtain both the recycling flux and the global particle confinement time. With sufficiently high resolution the isotopic plasma composition can be obtained. The impurity elements can be divided into desorbed elements (mainly oxygen) and eroded elements (metals from both walls and limiter) according to the plasma-wall interaction processes originating them. Space-and time-resolved emission in the VUV region down to about 20 A will be reviewed for ohmically-heated discharges. The time evolution can be divided into four phases, not always clearly separated in a particular discharge: a) the initial phase, lasting less than 10 ms (the so-called burn-out phase), b) the period of increasing plasma current and electron temperature, lasting typically 10 - 100 ms, c) an eventual steady state (plateau of the plasma current with almost constant density and temperature), d) the increase of the electron density up to or just below the maximum value attainable in a given device. For all these phases the results reported from different devices will be described and compared

  17. Simulation of core turbulence measurement in Tore Supra ohmic regimes

    NARCIS (Netherlands)

    Hacquin, S.; Citrin, J.; Arnichand, H.; Sabot, R.; Bourdelle, C.; Garbet, X.; Kramer-Flecken, A.; Tore Supra team,

    2016-01-01

    This paper reports on a simulation of reflectometry measurement in Tore Supra ohmic discharges, for which the experimental observations as well as gyrokinetic non-linear computations predict a modification of turbulence spectrum between the linear (LOC) and the saturated ohmic confinement (SOC)

  18. Effect of electropermeabilization by ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water and apple juice.

    Science.gov (United States)

    Park, Il-Kyu; Kang, Dong-Hyun

    2013-12-01

    The effect of electric field-induced ohmic heating for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in buffered peptone water (BPW) (pH 7.2) and apple juice (pH 3.5; 11.8 °Brix) was investigated in this study. BPW and apple juice were treated at different temperatures (55°C, 58°C, and 60°C) and for different times (0, 10, 20, 25, and 30 s) by ohmic heating compared with conventional heating. The electric field strength was fixed at 30 V/cm and 60 V/cm for BPW and apple juice, respectively. Bacterial reduction resulting from ohmic heating was significantly different (Pheating at 58°C and 60°C in BPW and at 55°C, 58°C, and 60°C in apple juice for intervals of 0, 10, 20, 25, and 30 s. These results show that electric field-induced ohmic heating led to additional bacterial inactivation at sublethal temperatures. Transmission electron microscopy (TEM) observations and the propidium iodide (PI) uptake test were conducted after treatment at 60°C for 0, 10, 20, 25 and 30 s in BPW to observe the effects on cell permeability due to electroporation-caused cell damage. PI values when ohmic and conventional heating were compared were significantly different (Pheating can more effectively reduce bacterial populations at reduced temperatures and shorter time intervals, especially in acidic fruit juices such as apple juice. Therefore, loss of quality can be minimized in a pasteurization process incorporating ohmic heating.

  19. Ohmic contacts to InN-based materials

    Directory of Open Access Journals (Sweden)

    Sai P. O.

    2016-10-01

    Full Text Available The key aspects of ohmic contact formation to InN-based materials were investigated. Detailed analysis of studies conducted over the past three decades, allows determining the basic principles of such contacts. The contact structure properties and optimal conditions for them are presented. Different types of metallization are considered, the advantages and disadvantages of each are determined, including the basic requirements that such contact must meet. There is emphasis on the using multilayer metallization with the barrier layers. In the case of the InAlN/GaN systems, the general approaches of forming ohmic contacts were considered.

  20. Ultrasensitive NO2 Sensor Based on Ohmic Metal-Semiconductor Interfaces of Electrolytically Exfoliated Graphene/Flame-Spray-Made SnO2 Nanoparticles Composite Operating at Low Temperatures.

    Science.gov (United States)

    Tammanoon, Nantikan; Wisitsoraat, Anurat; Sriprachuabwong, Chakrit; Phokharatkul, Ditsayut; Tuantranont, Adisorn; Phanichphant, Sukon; Liewhiran, Chaikarn

    2015-11-04

    In this work, flame-spray-made undoped SnO2 nanoparticles were loaded with 0.1-5 wt % electrolytically exfoliated graphene and systematically studied for NO2 sensing at low working temperatures. Characterizations by X-ray diffraction, transmission/scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy indicated that high-quality multilayer graphene sheets with low oxygen content were widely distributed within spheriodal nanoparticles having polycrystalline tetragonal SnO2 phase. The 10-20 μm thick sensing films fabricated by spin coating on Au/Al2O3 substrates were tested toward NO2 at operating temperatures ranging from 25 to 350 °C in dry air. Gas-sensing results showed that the optimal graphene loading level of 0.5 wt % provided an ultrahigh response of 26,342 toward 5 ppm of NO2 with a short response time of 13 s and good recovery stabilization at a low optimal operating temperature of 150 °C. In addition, the optimal sensor also displayed high sensor response and relatively short response time of 171 and 7 min toward 5 ppm of NO2 at room temperature (25 °C). Furthermore, the sensors displayed very high NO2 selectivity against H2S, NH3, C2H5OH, H2, and H2O. Detailed mechanisms for the drastic NO2 response enhancement by graphene were proposed on the basis of the formation of graphene-undoped SnO2 ohmic metal-semiconductor junctions and accessible interfaces of graphene-SnO2 nanoparticles. Therefore, the electrolytically exfoliated graphene-loaded FSP-made SnO2 sensor is a highly promising candidate for fast, sensitive, and selective detection of NO2 at low operating temperatures.

  1. Effects of thin heavily Mg-doped GaN capping layer on ohmic contact formation of p-type GaN

    International Nuclear Information System (INIS)

    Wu, L L; Zhao, D G; Jiang, D S; Chen, P; Le, L C; Li, L; Liu, Z S; Zhang, S M; Zhu, J J; Wang, H; Zhang, B S; Yang, H

    2013-01-01

    The growth condition of thin heavily Mg-doped GaN capping layer and its effect on ohmic contact formation of p-type GaN were investigated. It is confirmed that the excessive Mg doping can effectively enhance the Ni/Au contact to p-GaN after annealing at 550 °C. When the flow rate ratio between Mg and Ga gas sources is 6.4% and the layer width is 25 nm, the capping layer grown at 850 °C exhibits the best ohmic contact properties with respect to the specific contact resistivity (ρ c ). This temperature is much lower than the conventional growth temperature of Mg-doped GaN, suggesting that the deep-level-defect induced band may play an important role in the conduction of capping layer. (paper)

  2. Ohmic H-mode studies in TUMAN-3

    International Nuclear Information System (INIS)

    Lebedev, S.V.; Andrejko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Levin, L.S.; Tukachinsky, A.S.; Tendler, M.

    1994-01-01

    The spontaneous transition from Ohmically heated limiter discharges into the regime with improved confinement termed as ''Ohmic H-mode'' has been investigated in ''TUMAN-3''. The typical signatures of H-mode in tokamaks with powerful auxiliary heating have been observed: sharp drop of D α radiation with simultaneous increase in the electron density and stored energy, suppression of the density fluctuations and establishing the steep gradient near the periphery. The crucial role of the radial electric field in the L-H transition was found in the experiments with boundary biasing. The possibility of initiating the H-mode using single pellet injection was demonstrated. In Ohmic H-mode strong dependencies of τ E on plasma current and on input power and weak dependence on density were found. Thermal energy confinement time enhanced by a factor of 10 compared to predictions of Neo-Alcator scaling. Longest energy confinement time (30 ms) was obtained in the small tokamak TUMAN-3. Absolute values of the energy confinement time are in agreement with scaling proposed for description of the ELM-free H-modes in devices with powerful auxiliary heating (''DIII-D/JET H-mode'' scaling). (author)

  3. Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contact for AlGaN/GaN HEMT.

    Science.gov (United States)

    Wang, Cong; Kim, Nam-Young

    2012-02-07

    Good ohmic contacts with low contact resistance, smooth surface morphology, and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN/GaN high electron mobility transistors [HEMTs]. A tantalum [Ta] metal layer and an SiNx thin film were used for the first time as an effective diffusion barrier and encapsulation layer in the standard Ti/Al/metal/Au ohmic metallization scheme in order to obtain high quality ohmic contacts with a focus on the thickness of Ta and SiNx. It is found that the Ta thickness is the dominant factor affecting the contact resistance, while the SiNx thickness affects the surface morphology significantly. An optimized Ti/Al/Ta/Au ohmic contact including a 40-nm thick Ta barrier layer and a 50-nm thick SiNx encapsulation layer is preferred when compared with the other conventional ohmic contact stacks as it produces a low contact resistance of around 7.27 × 10-7 Ω·cm2 and an ultra-low nanoscale surface morphology with a root mean square deviation of around 10 nm. Results from the proposed study play an important role in obtaining excellent ohmic contact formation in the fabrication of AlGaN/GaN HEMTs.

  4. The role of titanium aluminide in n-gallium nitride ohmic contact technology

    Science.gov (United States)

    Pelto, Christopher M.

    Ohmic contacts are essential to the realization of efficient and affordable nitride-based electronic and optoelectronic devices. Currently, the most successful ohmic contact schemes to n-GaN are based on the Al/Ti bilayer structure, although the mechanism responsible for the low resistance in these contacts is not sufficiently understood. In this work, the intermetallic TiAl3 has been employed both as a model ohmic contact system to help understand the essential features of the Al/Ti standard contact, as well as a thermally stable oxidation cap for the bilayer structure. A quaternary isotherm of the Al-Ti-Ga-N system was calculated at 600°C, which showed that a sufficient phase topology was present to apply the exchange mechanism to the TiAl 3/GaN couple. The exchange mechanism rationalized the selection of the TiAl3 intermetallic by predicting that an Al-rich AlGaN layer will form at the metal/semiconductor interface. As part of the investigation of these novel contact systems, a thorough characterization was undertaken on both a standard Al/Ti and Au/Ni/Al/Ti contact to n-GaN in which the essential processing parameters and metallurgical properties were identified. The TiAl 3 contact was found to exhibit inferior electrical behavior compared to the Al/Ti bilayer, requiring significantly higher annealing temperatures to achieve comparable specific contact resistance. It is conjectured that this is due to the early formation of a TiN layer at the metal/semiconductor interface of the bilayer contact, even though both contacts are suspected to form the Al-rich nitride layer at higher temperature. As an oxidation cap, the TiAl3 metallization was found to provide much improved performance characteristics compared to the four-layer Au/Al/Ni/Ti standard. The TiAl 3/Al/Ti contact proved to achieve optimal performance at a much lower temperature than the standard, and furthermore showed complete insensitivity to the oxidation content of the annealing ambient. Reaction

  5. Analysis of a global energy confinement database for JET ohmic plasmas

    International Nuclear Information System (INIS)

    Bracco, G.; Thomsen, K.

    1997-01-01

    A database containing global energy confinement data for JET ohmic plasmas in the campaigns from 1984 to 1992 has been established. An analysis is presented of this database and the results are compared with data from other tokamaks, such as the Axially Symmetric Divertor Experiment (ASDEX), Frascati Tokamak Upgrade (FTU) and Tore Supra. The trends of JET ohmic confinement appear to be similar to those observed on other tokamaks: a linear dependence of the global energy confinement time on density is observed up to a density value where a saturation is attained; this density value defines the border between the linear and the saturated ohmic confinement regimes; this border is shifted towards higher density values if the q value of the discharge is decreased; the global confinement time in the saturated ohmic regime increases less than linearly with the value of the magnetic field. (author). 20 refs, 13 figs, 4 tabs

  6. Ohmic ignition of Neo-Alcator tokamak with adiabatic compression

    International Nuclear Information System (INIS)

    Inoue, Nobuyuki; Ogawa, Yuichi

    1992-01-01

    Ohmic ignition condition on axis of the DT tokamak plasma heated by minor radius and major radius adiabatic compression is studied assuming parabolic profiles for plasma parameters, elliptic plasma cross section, and Neo-Alcator confinement scaling. It is noticeable that magnetic compression reduces the necessary total plasma current for Ohmic ignition device. Typically in compact ignition tokamak of the minor radius of 0.47 m, major radius of 1.5 m and on-axis toroidal field of 20 T, the plasma current of 6.8 MA is sufficient for compression plasma, while that of 11.7 MA is for no compression plasma. Another example with larger major radius is also described. In such a device the large flux swing of Ohmic transformer is available for long burn. Application of magnetic compression saves the flux swing and thereby extends the burn time. (author)

  7. Energy confinement comparison of ohmically heated stellarators to tokamaks

    International Nuclear Information System (INIS)

    Chu, T.K.; Lee, Y.C.

    1979-12-01

    An empirical scaling prescribes that the energy confinement time in ohmically heated stellarators and tokamaks is proportional to the internal energy of the plasma and the minor radius, and inversely proportional to the current density. A thermal-conduction energy transport model, based on a heuristic assumption that the effective momentum transfer in the radial direction is proportional to the classical parallel momentum transfer which results in ohmic heating, is used to explain this scaling

  8. Three-dimensional stellarator equilibrium as an ohmic steady state

    International Nuclear Information System (INIS)

    Park, W.; Monticello, D.A.; Strauss, H.; Manickam, J.

    1985-07-01

    A stable three-dimensional stellarator equilibrium can be obtained numerically by a time-dependent relaxation method using small values of dissipation. The final state is an ohmic steady state which approaches an ohmic equilibrium in the limit of small dissipation coefficients. We describe a method to speed up the relaxation process and a method to implement the B vector . del p = 0 condition. These methods are applied to obtain three-dimensional heliac equilibria using the reduced heliac equations

  9. Effect of ohmic heating processing conditions on color stability of fungal pigments.

    Science.gov (United States)

    Aguilar-Machado, Diederich; Morales-Oyervides, Lourdes; Contreras-Esquivel, Juan C; Aguilar, Cristóbal; Méndez-Zavala, Alejandro; Raso, Javier; Montañez, Julio

    2017-06-01

    The aim of this work was to analyze the effect of ohmic heating processing conditions on the color stability of a red pigment extract produced by Penicillium purpurogenum GH2 suspended in a buffer solution (pH 6) and in a beverage model system (pH 4). Color stability of pigmented extract was evaluated in the range of 60-90 ℃. The degradation pattern of pigments was well described by the first-order (fractional conversion) and Bigelow model. Degradation rate constants ranged between 0.009 and 0.088 min -1 in systems evaluated. Significant differences in the rate constant values of the ohmic heating-treated samples in comparison with conventional thermal treatment suggested a possible effect of the oscillating electric field generated during ohmic heating. The thermodynamic analysis also indicated differences in the color degradation mechanism during ohmic heating specifically when the pigment was suspended in the beverage model system. In general, red pigments produced by P. purpurogenum GH2 presented good thermal stability under the range of the evaluated experimental conditions, showing potential future applications in pasteurized food matrices using ohmic heating treatment.

  10. Pentacene ohmic contact on the transparent conductive oxide films

    International Nuclear Information System (INIS)

    Chu, Jian-An; Zeng, Jian-Jhou; Wu, Kuo-Chen; Lin, Yow-Jon

    2010-01-01

    Low-resistance ohmic contacts are essential to improve the performance of pentacene-based electronic and optoelectronic devices. In this study, we reported ohmic contact formation at the indium tin oxide (ITO)/pentacene and indium cerium oxide (ICO)/pentacene interfaces. According to the observed results from current-voltage and Kelvin probe measurements, we found that the lower contact resistivity of the ICO/pentacene sample than the ITO/pentacene sample may be attributed to the higher surface work function of ICO than ITO.

  11. Statistical analyses of local transport coefficients in Ohmic ASDEX discharges

    International Nuclear Information System (INIS)

    Simmet, E.; Stroth, U.; Wagner, F.; Fahrbach, H.U.; Herrmann, W.; Kardaun, O.J.W.F.; Mayer, H.M.

    1991-01-01

    Tokamak energy transport is still an unsolved problem. Many theoretical models have been developed, which try to explain the anomalous high energy-transport coefficients. Up to now these models have been applied to global plasma parameters. A comparison of transport coefficients with global confinement time is only conclusive if the transport is dominated by one process across the plasma diameter. This, however, is not the case in most Ohmic confinement regimes, where at least three different transport mechanisms play an important role. Sawtooth activity leads to an increase in energy transport in the plasma centre. In the intermediate region turbulent transport is expected. Candidates here are drift waves and resistive fluid turbulences. At the edge, ballooning modes or rippling modes could dominate the transport. For the intermediate region, one can deduce theoretical scaling laws for τ E from turbulent theories. Predicted scalings reproduce the experimentally found density dependence of τ E in the linear Ohmic confinement regime (LOC) and the saturated regime (SOC), but they do not show the correct dependence on the isotope mass. The relevance of these transport theories can only be tested in comparing them to experimental local transport coefficients. To this purpose we have performed transport calculations on more than a hundred Ohmic ASDEX discharges. By Principal Component Analysis we determine the dimensionless components which dominate the transport coefficients and we compare the results to the predictions of various theories. (author) 6 refs., 2 figs., 1 tab

  12. Method of separate determination of high-ohmic sample resistance and contact resistance

    Directory of Open Access Journals (Sweden)

    Vadim A. Golubiatnikov

    2015-09-01

    Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

  13. Bayesian Analysis of Hot-Jupiter Radius Anomalies: Evidence for Ohmic Dissipation?

    Science.gov (United States)

    Thorngren, Daniel P.; Fortney, Jonathan J.

    2018-05-01

    The cause of hot-Jupiter radius inflation, where giant planets with {T}eq} > 1000 K are significantly larger than expected, is an open question and the subject of many proposed explanations. Many of these hypotheses postulate an additional anomalous power that heats planets’ convective interiors, leading to larger radii. Rather than examine these proposed models individually, we determine what anomalous powers are needed to explain the observed population’s radii, and consider which models are most consistent with this. We examine 281 giant planets with well-determined masses and radii and apply thermal evolution and Bayesian statistical models to infer the anomalous power as a fraction of (and varying with) incident flux ɛ(F) that best reproduces the observed radii. First, we observe that the inflation of planets below about M = 0.5 M J appears very different than their higher-mass counterparts, perhaps as the result of mass loss or an inefficient heating mechanism. As such, we exclude planets below this threshold. Next, we show with strong significance that ɛ(F) increases with {T}eq} toward a maximum of ∼2.5% at T eq ≈ 1500 K, and then decreases as temperatures increase further, falling to ∼0.2% at T eff = 2500 K. This high-flux decrease in inflation efficiency was predicted by the Ohmic dissipation model of giant planet inflation but not other models. We also show that the thermal tides model predicts far more variance in radii than is observed. Thus, our results provide evidence for the Ohmic dissipation model and a functional form for ɛ(F) that any future theories of hot-Jupiter radii can be tested against.

  14. Experimental study of the β-limit in ohmic H-mode in the TUMAN-3M tokamak

    International Nuclear Information System (INIS)

    Lebedev, S.V.; Andreiko, M.V.; Askinazi, L.G.; Golant, V.E.; Kornev, V.A.; Krikunov, S.V.; Levin, L.S.; Rozhdestvensky, V.V.; Tukachinsky, A.S.; Yaroshevich, S.P.

    1998-01-01

    Because of its high confinement properties, the H-mode provides good opportunities to achieve high beta values in a tokamak. In this paper the results of an experimental study of β T and β N limits in the H-mode, obtained in a circular cross section tokamak without auxiliary heating are presented. The experiments were performed in the TUMAN-3M tokamak. The device has the following parameters: R 0 =0.53m, a s =0.22m (limiter configuration), B T ≤1.2T, I p ≤175kA, n-bar e ≤6.2x10 19 m -3 . The stored energy was measured using diamagnetic loops and compared with W calculated from kinetic data obtained by Thomson scattering and microwave interferometry. Measurements of the stored energy and of the β were performed in the ohmic H-mode before and after boronization and in the scenario with fast current ramp-down in ohmic H-mode. A maximum value of β T of 2.0% and β N of 2.0 were achieved. The β N limit achieved reveals itself as a 'soft' (non-disruptive) limit. The stored energy slowly decays after the current ramp-down. No correlation was found between beta restriction and MHD phenomena. Internal transport barrier (ITB) formation was observed in ohmic H-mode. An enhancement factor of 2.0 over ITER93H(ELM-free) was found in the ohmic H-mode with ITB. (author)

  15. Minimization of Ohmic losses for domain wall motion in ferromagnetic nanowires

    Science.gov (United States)

    Abanov, Artem; Tretiakov, Oleg; Liu, Yang

    2011-03-01

    We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain wall velocity we find the time-dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic. This work was supported by the NSF Grant No. 0757992 and Welch Foundation (A-1678).

  16. Effect of morphology on the non-ohmic conduction in ZnO nanostructures

    Science.gov (United States)

    Praveen, E.; Jayakumar, K.

    2016-05-01

    Nanostructures of ZnO is synthesized with nanoflower like morphology by simple wet chemical method. The structural, morphological and electrical characterization have been carried out. The temperature dependent electrical characterization of ZnO pellets of thickness 1150 µm is made by the application of 925MPa pressure. The morphological dependence of non-ohmic conduction beyond some arbitrary tunneling potential and grain boundary barrier thickness is compared with the commercially available bulk ZnO. Our results show the suitability of nano-flower like ZnO for the devices like sensors, rectifiers etc.

  17. Ti(r) profiles from the JET neutron profile monitor for ohmic discharges

    Energy Technology Data Exchange (ETDEWEB)

    Esposito, B. (ENEA, Frascati (Italy). Centro Ricerche Energia); Marcus, F.B.; Conroy, S.; Jarvis, O.N.; Loughlin, M.J.; Sadler, G.; Belle, P. van (Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking); Adams, J.M.; Watkins, N. (AEA Industrial Technology, Harwell (United Kingdom))

    1991-01-01

    A study has been made of the neutron emissivity, using the JET neutron profile monitor, obtained for ohmically heated deuterium discharges. Both one-dimensional (1-D) best-fit inversion procedures and 2-D tomography have been used to deduce the radial profile of the neutron emission from the line-integral data. The profiles of ion temperature and ion thermal conductivity are then derived. The scaling of the ion thermal conductivity with plasma current is found to be opposite to that of neoclassical theory. (author) 4 refs., 5 figs.

  18. Ohmic Contacts to P-Type SiC

    National Research Council Canada - National Science Library

    Crofton, John

    2000-01-01

    Alloys of aluminum (Al) have previously been used as ohmic contacts to p-type SiC, however the characteristics and performance of these contacts is drastically affected by the type and composition of the Al alloy...

  19. From coherent motion to localization: II. Dynamics of the spin-boson model with sub-Ohmic spectral density at zero temperature

    International Nuclear Information System (INIS)

    Wang Haobin; Thoss, Michael

    2010-01-01

    Graphical abstract: □□□ - Abstract: The dynamics of the spin-boson model at zero temperature is studied for a bath characterized by a sub-Ohmic spectral density. Using the numerically exact multilayer multiconfiguration time-dependent Hartree (ML-MCTDH) method, the population dynamics of the two-level subsystem has been investigated in a broad range of parameter space. The results show the transition of the dynamics from weakly damped coherent motion to localization upon increase of the system-bath coupling strength. Comparison of the exact ML-MCTDH simulations with the non-interacting blip approximation (NIBA) shows that the latter performs rather poorly in the weak coupling regime with small Kondo parameters. However, NIBA improves significantly upon increase in the coupling strength and is quantitatively correct in the strong coupling, nonadiabatic limit. The transition from coherent motion to localization as a function of the different parameters of the model is analyzed in some detail.

  20. Minimization of Ohmic Losses for Domain Wall Motion in a Ferromagnetic Nanowire

    Science.gov (United States)

    Tretiakov, O. A.; Liu, Y.; Abanov, Ar.

    2010-11-01

    We study current-induced domain-wall motion in a narrow ferromagnetic wire. We propose a way to move domain walls with a resonant time-dependent current which dramatically decreases the Ohmic losses in the wire and allows driving of the domain wall with higher speed without burning the wire. For any domain-wall velocity we find the time dependence of the current needed to minimize the Ohmic losses. Below a critical domain-wall velocity specified by the parameters of the wire the minimal Ohmic losses are achieved by dc current. Furthermore, we identify the wire parameters for which the losses reduction from its dc value is the most dramatic.

  1. Microscopic mapping of specific contact resistances and long-term reliability tests on 4H-silicon carbide using sputtered titanium tungsten contacts for high temperature device applications

    Science.gov (United States)

    Lee, S.-K.; Zetterling, C.-M.; Ostling, M.

    2002-07-01

    We report on the microscopic mapping of specific contact resistances (rhoc) and long-term reliability tests using sputtered titanium tungsten (TiW) ohmic contacts to highly doped n-type epilayers of 4H-silicon carbide. The TiW ohmic contacts showed good uniformity with low contact resistivity of 3.3 x10-5 Omega cm2. Microscopic mapping of the rhoc showed that the rhoc had a distribution that decreased from the center to the edge of the wafer. This distribution of the rhoc is caused by variation of the doping concentration of the wafer. Sacrificial oxidation at high temperature partially recovered inductively coupled plasma etch damage. TiW contacts with platinum and gold capping layers have stable specific contact resistance at 500 and 600 degC in a vacuum chamber for 308 h.

  2. Role of Ag-alloy in the thermal stability of Ag-based ohmic contact to GaN(0 0 0 1) surface

    International Nuclear Information System (INIS)

    Xiong, Zhihua; Qin, Zhenzhen; Zhao, Qian; Chen, Lanli

    2015-01-01

    First-principles calculations are performed to study Ag and Ag-alloy adsorption stability on GaN(0 0 0 1) surface. We find Ag only contact to GaN surface is unstable under high temperature. While Ag-alloy adsorption exhibits better adsorption stability and electronic properties than that of the Ag only contact,due to the enhanced interaction between Ag-alloy and GaN(0 0 0 1) surface. The Ag-alloy, particularly AgNi, is proposed to be used as very promising ohmic contact to GaN for practical applications

  3. Electrical and structural properties of surfaces and interfaces in Ti/Al/Ni Ohmic contacts to p-type implanted 4H-SiC

    Science.gov (United States)

    Vivona, M.; Greco, G.; Bongiorno, C.; Lo Nigro, R.; Scalese, S.; Roccaforte, F.

    2017-10-01

    In this work, the electrical and structural properties of Ti/Al/Ni Ohmic contacts to p-type implanted silicon carbide (4H-SiC) were studied employing different techniques. With increasing the annealing temperature, an improvement of the electrical properties of the contacts is highlighted, until an Ohmic behavior is obtained at 950 °C, with a specific contact resistance ρc = 2.3 × 10-4 Ω cm2. A considerable intermixing of the metal layers occurred upon annealing, as a consequence of the formation of different phases, both in the uppermost part of the stack (mainly Al3Ni2) and at the interface with SiC, where the formation of preferentially aligned TiC is observed. The formation of an Ohmic contact was associated with the occurrence of the reaction and the disorder at the interface, where the current transport is dominated by the thermionic field emission mechanism with a barrier height of 0.56 eV.

  4. Transition conductivity study of high temperature superconductor compounds: the role of fluctuations

    International Nuclear Information System (INIS)

    Pagnon, V.

    1991-04-01

    This memory subject is the transition conductivity study of high temperature superconductors in corelation with their anisotropy. Systematic conductivity measurements were made on YBaCuO and BaSrCaCuO in relation with temperature from 4.2 K to 1200 K, and with a magnetic field up to 8 T in several directions. Oxygen order has an effect on the characteristics at YBaCuO transition conductivity. The activation energy for oxygen absorption is about 0.5eV. One method of analysis of the conductivity fluctuations about the transition temperature is proposed. Two separate rates are noticeable in YBaCuO compound. The 3 D fluctuations rate in the immediate neighbourghood of the transition lets place to the 2 D fluctuations rate at high temperature. Transitions temperatures governing each rate are different, that's incompatible with the formula proposed by Lawrence and Doniach. On the other hand, the analogy with quasi-2 D magnetic systems seems more relevant. A magnetic field application or a lowering of oxygen concentration removes the 3 D fluctuations rate. Non ohmic effects observed at the transition conductivity foot are analysis as a non-linear 2 D excitation manifestation of the supraconductive phase. Finally, by measurements on strontium doped YBaCuO crystals, we confirm a metal-insulator transition along the C-Axe when oxygen concentration reduces. This is connected with the specific heat jump. All these results uplighten the fundamental bidimensional character of high transition temperature superconductivity [fr

  5. Graphene in ohmic contact for both n-GaN and p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Zhong, Haijian; Liu, Zhenghui; Shi, Lin; Xu, Gengzhao; Fan, Yingmin; Huang, Zengli [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Wang, Jianfeng; Ren, Guoqiang; Xu, Ke, E-mail: kxu2006@sinano.ac.cn [Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123 (China); Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123 (China)

    2014-05-26

    The wrinkles of single layer graphene contacted with either n-GaN or p-GaN were found both forming ohmic contacts investigated by conductive atomic force microscopy. The local I–V results show that some of the graphene wrinkles act as high-conductive channels and exhibiting ohmic behaviors compared with the flat regions with Schottky characteristics. We have studied the effects of the graphene wrinkles using density-functional-theory calculations. It is found that the standing and folded wrinkles with zigzag or armchair directions have a tendency to decrease or increase the local work function, respectively, pushing the local Fermi level towards n- or p-type GaN and thus improving the transport properties. These results can benefit recent topical researches and applications for graphene as electrode material integrated in various semiconductor devices.

  6. Operation of ohmic Ti/Al/Pt/Au multilayer contacts to GaN at 600 °C in air

    Science.gov (United States)

    Hou, Minmin; Senesky, Debbie G.

    2014-08-01

    The high-temperature characteristics (at 600 °C) of Ti/Al/Pt/Au multilayer contacts to gallium nitride (GaN) in air are reported. Microfabricated circular-transfer-line-method test structures were subject to 10 h of thermal storage at 600 °C. Intermittent electrical characterization during thermal storage showed minimal variation in the contact resistance after 2 h and that the specific contact resistivity remained on the order of 10-5 Ω-cm2. In addition, the thermally stored multilayer contacts to GaN showed ohmic I-V characteristics when electrically probed at 600 °C. The microstructural analysis with atomic force microscopy showed minimal changes in surface roughness after thermal storage. Observations of the thermochemical reactions after thermal storage using Auger electron spectroscopy chemical depth profiling showed diffusion of Pt and minimal additional Al oxidation. The results support the use of Ti/Al/Pt/Au multilayer metallization for GaN-based sensors and electronic devices that will operate within a high-temperature and oxidizing ambient.

  7. Ohmic discharges in Tore Supra - Marfes and detached plasmas

    International Nuclear Information System (INIS)

    Vallet, J.C.

    1990-01-01

    The Tore Supra plasma characteristics are given. The observed discharges are either leaning on the graphite inner first wall or limited by movable pump limiters located outboard and at the bottom of the vacuum chamber. The particular plasma conditions which lead to marfes and detached plasmas in ohmically heated He and D2 discharges limited by the inner wall are investigated. The results show that the ratio of radiated power to ohmic power increase linearly with M.g. As M.g rises, attached plasma, marfe and detached plasma are sequentially observed. Detached plasma with an effective radius as small as. 7 times the limiter radius was observed on Tore Supra

  8. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

    KAUST Repository

    Yonkee, Benjamin P.; Young, Erin; DenBaars, Steven P; Speck, James S; Nakamura, Shuji

    2017-01-01

    Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

  9. High reflectivity Ohmic contacts to n-GaN utilizing vacuum annealed aluminum

    KAUST Repository

    Yonkee, Benjamin P.

    2017-10-31

    Ohmic contacts to both c-plane and (202 ̅1 ̅) n-GaN are demonstrated using a pure aluminum layer which was vacuum annealed to prevent oxidation. Specific contact resistivities of 4.4 × 10-7 and 2.3 × 10-5 Ωcm2 were obtained without annealing for c-plane and (202 ̅1 ̅ ) samples respectively. A reflectivity of over 85% at 450 nm was measured for both samples. After a 300 °C anneal specific contact resistivities of 1.5 × 10-7 and 1.8 × 10-7 Ωcm2 were obtained for c-plane and (202 ̅1 ̅ ) samples respectively and the reflectivities remained higher than 80%.

  10. Degradation study of AlAs/GaAs resonant tunneling diode IV curves under influence of high temperatures

    Science.gov (United States)

    Makeev, M. O.; Meshkov, S. A.; Sinyakin, V. Yu

    2017-11-01

    In the present work the thermal degradation of IV curves of AlAs/GaAs resonant tunneling diodes using artificial aging method was investigated. The dependency of AuGeNi specific ohmic contact resistance on time and temperature was determined.

  11. Lead-germanium ohmic contact on to gallium arsenide formed by the solid phase epitaxy of germanium: A microstructure study

    Science.gov (United States)

    Radulescu, Fabian

    2000-12-01

    Driven by the remarkable growth in the telecommunication market, the demand for more complex GaAs circuitry continued to increase in the last decade. As a result, the GaAs industry is faced with new challenges in its efforts to fabricate devices with smaller dimensions that would permit higher integration levels. One of the limiting factors is the ohmic contact metallurgy of the metal semiconductor field effect transistor (MESFET), which, during annealing, induces a high degree of lateral diffusion into the substrate. Because of its limited reaction with the substrate, the Pd-Ge contact seems to be the most promising candidate to be used in the next generation of MESFET's. The Pd-Ge system belongs to a new class of ohmic contacts to compound semiconductors, part of an alloying strategy developed only recently, which relies on solid phase epitaxy (SPE) and solid phase regrowth to "un-pin" the Fermi level at the surface of the compound semiconductor. However, implementing this alloy into an integrated process flow proved to be difficult due to our incomplete understanding of the microstructure evolution during annealing and its implications on the electrical properties of the contact. The microstructure evolution and the corresponding solid state reactions that take place during annealing of the Pd-Ge thin films on to GaAs were studied in connection with their effects on the electrical properties of the ohmic contact. The phase transformations sequence, transition temperatures and activation energies were determined by combining differential scanning calorimetry (DSC) for thermal analysis with transmission electron microscopy (TEM) for microstructure identification. In-situ TEM annealing experiments on the Pd/Ge/Pd/GaAs ohmic contact system have permitted real time determination of the evolution of contact microstructure. The kinetics of the solid state reactions, which occur during ohmic contact formation, were determined by measuring the grain growth rates

  12. Effect of the ohmic drop in a RPC-LIKE chamber for measurements of electron transport parameters

    Energy Technology Data Exchange (ETDEWEB)

    Petri, Anna R.; Gonçalves, Josemary A.C.; Bueno, Carmen C., E-mail: annapetri@usp.br, E-mail: josemary@ipen.br, E-mail: ccbueno@ipen.br [Instituto de Pesquisas Energéticas e Nucleares (IPEN/CNEN-SP), São Paulo, SP (Brazil); Mangiarotti, Alessio, E-mail: alessio@if.usp.br [Universidade de São Paulo (IF/USP), SP (Brazil). Instituto de Física

    2017-07-01

    The main advantage of Resistive Plate Chambers (RPCs), applied, for instance, in High-Energy Experiments and Positron Emission Tomography (PET), is that it is spark-protected due to the presence of, at least, one high resistive electrode. However, the ohmic drop across the latter can affect the charge multiplication significantly. In this work, we investigate this effect in a RPC-like chamber. The counter was filled with nitrogen at atmospheric pressure and the primary ionization was produced by the incidence of nitrogen pulsed laser beam on an aluminum cathode. The illumination area of the cathode was measured using a foil of millimetric paper overlaid on this electrode. In this way, the resistance of the glass anode could be estimated using the known resistivity of the glass (ρ=2×10{sup 12} Ω.cm). Therefore, the voltage drop across the dielectric was calculated by the product of the current across the gas gap and the anode resistance. In order to mitigate the effect of the resistive electrode, the laser beam intensity was limited by interposing metallic meshes between the laser and the chamber window. The dependence of the ohmic drop from the applied voltage was analyzed. The results obtained shown that, without the meshes, the ohmic drop corresponds up to 7% of the applied voltage, preventing the detection system to reach values of density-normalized electric fields in the gas gap (E{sub eff}/N) higher than 166 Td. By minimizing the laser beam intensity and, consequently, the primary ionization, the ohmic drop represented only 0.2% of the applied voltage, extending the E{sub eff} /N range up to 175 Td. (author)

  13. Ohmic Heating Technology and Its Application in Meaty Food: A Review

    OpenAIRE

    Rishi Richa; N. C. Shahi; Anupama Singh; U. C. Lohani; P. K. Omre; Anil Kumar; T. K. Bhattacharya

    2017-01-01

    The purpose of the current review paper is to investigate and analyze about the effects of ohmic heating (OH) different application in the field of fish, meat and its product and compare it with other conventional thermal methods of food processing such as thawing, heating, cooking etc. Food quality, food safety, convenience, freshness, healthy food, natural flavor and taste with extended shelf-life are the main criteria for the demand made by today’s consumers. Ohmic heating is a substitute ...

  14. Energy confinement scaling in tokamaks: some implications of recent experiments with ohmic and strong auxiliary heating

    International Nuclear Information System (INIS)

    Goldston, R.J.

    1984-02-01

    Recent results from confinement scaling experiments on tokamaks with ohmic and strong auxiliary heating are reviewed. An attempt is made to draw these results together into a low-density ohmic confinement scaling law, and a scaling law for confinement with auxiliary heating. The auxiliary heating confinement law may also serve to explain the saturation in tau/sub E/ vs anti n/sub e/ observed in some ohmic heating density scaling experiments

  15. Flexible carbon-based ohmic contacts for organic transistors

    Science.gov (United States)

    Brandon, Erik (Inventor)

    2007-01-01

    The present invention relates to a system and method of organic thin-film transistors (OTFTs). More specifically, the present invention relates to employing a flexible, conductive particle-polymer composite material for ohmic contacts (i.e. drain and source).

  16. AlGaN/GaN high electron mobility transistors with implanted ohmic contacts

    International Nuclear Information System (INIS)

    Wang, H.T.; Tan, L.S.; Chor, E.F.

    2007-01-01

    Selective area silicon implantation for source/drain regions was integrated into the fabrication of molecular beam epitaxy-grown AlGaN/GaN HEMTs. Dopant activation was achieved by rapid thermal annealing at 1100 deg. C in flowing N 2 ambient for 120 s with an AlN encapsulation. Linear transmission line measurements showed that the resistance of the overlay Ti/Al/Ni/Au ohmic contacts was reduced by 61% compared to the control sample. After the Schottky Ni/Au gate formation, the typical DC characteristics displayed a higher current drive, smaller knee voltage and better gate control properties for HEMTs with implanted source and drain regions

  17. Numerical simulation of proton exchange membrane fuel cells at high operating temperature

    Science.gov (United States)

    Peng, Jie; Lee, Seung Jae

    A three-dimensional, single-phase, non-isothermal numerical model for proton exchange membrane (PEM) fuel cell at high operating temperature (T ≥ 393 K) was developed and implemented into a computational fluid dynamic (CFD) code. The model accounts for convective and diffusive transport and allows predicting the concentration of species. The heat generated from electrochemical reactions, entropic heat and ohmic heat arising from the electrolyte ionic resistance were considered. The heat transport model was coupled with the electrochemical and mass transport models. The product water was assumed to be vaporous and treated as ideal gas. Water transportation across the membrane was ignored because of its low water electro-osmosis drag force in the polymer polybenzimidazole (PBI) membrane. The results show that the thermal effects strongly affect the fuel cell performance. The current density increases with the increasing of operating temperature. In addition, numerical prediction reveals that the width and distribution of gas channel and current collector land area are key optimization parameters for the cell performance improvement.

  18. Numerical simulation of proton exchange membrane fuel cells at high operating temperature

    Energy Technology Data Exchange (ETDEWEB)

    Peng, Jie; Lee, Seung Jae [Energy Lab, Samsung Advanced Institute of Technology, Mt. 14-1 Nongseo-Dong, Giheung-Gu, Yongin-Si, Gyeonggi-Do 446-712 (Korea, Republic of)

    2006-11-22

    A three-dimensional, single-phase, non-isothermal numerical model for proton exchange membrane (PEM) fuel cell at high operating temperature (T>=393K) was developed and implemented into a computational fluid dynamic (CFD) code. The model accounts for convective and diffusive transport and allows predicting the concentration of species. The heat generated from electrochemical reactions, entropic heat and ohmic heat arising from the electrolyte ionic resistance were considered. The heat transport model was coupled with the electrochemical and mass transport models. The product water was assumed to be vaporous and treated as ideal gas. Water transportation across the membrane was ignored because of its low water electro-osmosis drag force in the polymer polybenzimidazole (PBI) membrane. The results show that the thermal effects strongly affect the fuel cell performance. The current density increases with the increasing of operating temperature. In addition, numerical prediction reveals that the width and distribution of gas channel and current collector land area are key optimization parameters for the cell performance improvement. (author)

  19. High temperature hall effect measurement system design, measurement and analysis

    Science.gov (United States)

    Berkun, Isil

    A reliable knowledge of the transport properties of semiconductor materials is essential for the development and understanding of a number of electronic devices. In this thesis, the work on developing a Hall Effect measurement system with software based data acqui- sition and control for a temperature range of 300K-700K will be described. A system was developed for high temperature measurements of materials including single crystal diamond, poly-crystalline diamond, and thermoelectric compounds. An added capability for monitor- ing the current versus voltage behavior of the contacts was used for studying the influence of ohmic and non-ohmic contacts on Hall Effect measurements. The system has been primar- ily used for testing the transport properties of boron-doped single crystal diamond (SCD) deposited in a microwave plasma-assisted chemical vapor deposition (MPCVD) reactor [1]. Diamond has several outstanding properties that are of high interest for its development as an electronic material. These include a relatively wide band gap of 5.5 (eV), high thermal conductivity, high mobility, high saturation velocity, and a high breakdown voltage. For a temperature range of 300K-700K, IV curves, Hall mobilities and carrier concentrations are shown. Temperature dependent Hall effect measurements have shown carrier concentrations from below 1017cm --3 to approximately 1021 cm--3 with mobilities ranging from 763( cm2/V s) to 0.15(cm 2/V s) respectively. Simulation results have shown the effects of single and mixed carrier models, activation energies, effective mass and doping concentrations. These studies have been helpful in the development of single crystal diamond for diode applications. Reference materials of Ge and GaAs were used to test the Hall Effect system. The system was also used to characterize polycrystalline diamond deposited on glass for electrochemical applications, and Mg2(Si,Sn) compounds which are promising candidates of low-cost, light weight and non

  20. On a two-layer Si_3N_4/SiO_2 dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    International Nuclear Information System (INIS)

    Arutyunyan, S. S.; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V.

    2016-01-01

    The fabrication of a two-layer Si_3N_4/SiO_2 dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si_3N_4/SiO_2 mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  1. Synergetic aspects of gas-discharge: lateral patterns in dc systems with a high ohmic barrier

    Science.gov (United States)

    Purwins, H.-G.; Stollenwerk, L.

    2014-12-01

    The understanding of self-organized patterns in spatially extended nonlinear dissipative systems is one of the most challenging subjects in modern natural sciences. Such patterns are also referred to as dissipative structures. We review this phenomenon in planar low temperature dc gas-discharge devices with a high ohmic barrier. It is demonstrated that for these systems a deep qualitative understanding of dissipative structures can be obtained from the point of view of synergetics. At the same time, a major contribution can be made to the general understanding of dissipative structures. The discharge spaces of the experimentally investigated systems, to good approximation, have translational and rotational symmetry by contraction. Nevertheless, a given system may exhibit stable current density distributions and related patterns that break these symmetries. Among the experimentally observed fundamental patterns one finds homogeneous isotropic states, fronts, periodic patterns, labyrinth structures, rotating spirals, target patterns and localized filaments. In addition, structures are observed that have the former as elementary building blocks. Finally, defect structures as well as irregular patterns are common phenomena. Such structures have been detected in numerous other driven nonlinear dissipative systems, as there are ac gas-discharge devices, semiconductors, chemical solutions, electrical networks and biological systems. Therefore, from the experimental observations it is concluded that the patterns in planar low temperature dc gas-discharge devices exhibit universal behavior. From the theoretical point of view, dissipative structures of the aforementioned kind are also referred to as attractors. The possible sets of attractors are an important characteristic of the system. The number and/or qualitative nature of attractors may change when changing parameters. The related bifurcation behavior is a central issue of the synergetic approach chosen in the present

  2. Synergetic aspects of gas-discharge: lateral patterns in dc systems with a high ohmic barrier

    International Nuclear Information System (INIS)

    Purwins, H-G; Stollenwerk, L

    2014-01-01

    The understanding of self-organized patterns in spatially extended nonlinear dissipative systems is one of the most challenging subjects in modern natural sciences. Such patterns are also referred to as dissipative structures. We review this phenomenon in planar low temperature dc gas-discharge devices with a high ohmic barrier. It is demonstrated that for these systems a deep qualitative understanding of dissipative structures can be obtained from the point of view of synergetics. At the same time, a major contribution can be made to the general understanding of dissipative structures. The discharge spaces of the experimentally investigated systems, to good approximation, have translational and rotational symmetry by contraction. Nevertheless, a given system may exhibit stable current density distributions and related patterns that break these symmetries. Among the experimentally observed fundamental patterns one finds homogeneous isotropic states, fronts, periodic patterns, labyrinth structures, rotating spirals, target patterns and localized filaments. In addition, structures are observed that have the former as elementary building blocks. Finally, defect structures as well as irregular patterns are common phenomena. Such structures have been detected in numerous other driven nonlinear dissipative systems, as there are ac gas-discharge devices, semiconductors, chemical solutions, electrical networks and biological systems. Therefore, from the experimental observations it is concluded that the patterns in planar low temperature dc gas-discharge devices exhibit universal behavior. From the theoretical point of view, dissipative structures of the aforementioned kind are also referred to as attractors. The possible sets of attractors are an important characteristic of the system. The number and/or qualitative nature of attractors may change when changing parameters. The related bifurcation behavior is a central issue of the synergetic approach chosen in the present

  3. Low temperature growth of ultra-high mass density carbon nanotube forests on conductive supports

    International Nuclear Information System (INIS)

    Sugime, Hisashi; Esconjauregui, Santiago; Yang, Junwei; D'Arsié, Lorenzo; Robertson, John; Oliver, Rachel A.; Bhardwaj, Sunil; Cepek, Cinzia

    2013-01-01

    We grow ultra-high mass density carbon nanotube forests at 450 °C on Ti-coated Cu supports using Co-Mo co-catalyst. X-ray photoelectron spectroscopy shows Mo strongly interacts with Ti and Co, suppressing both aggregation and lifting off of Co particles and, thus, promoting the root growth mechanism. The forests average a height of 0.38 μm and a mass density of 1.6 g cm −3 . This mass density is the highest reported so far, even at higher temperatures or on insulators. The forests and Cu supports show ohmic conductivity (lowest resistance ∼22 kΩ), suggesting Co-Mo is useful for applications requiring forest growth on conductors

  4. Broad temperature adaptability of vanadium redox flow battery—Part 2: Cell research

    International Nuclear Information System (INIS)

    Xi, Jingyu; Xiao, Shuibo; Yu, Lihong; Wu, Lantao; Liu, Le; Qiu, Xinping

    2016-01-01

    Highlights: • VRFB can operate in a broad temperature range from −20 °C to 50 °C with high efficiency. • High temperatures reduce the ohmic and polarization resistances of VRFB. • The CE and capacity retention drop with temperature rising. • Operating at alternate temperatures gives extra damage to the VRFB. - Abstract: The operating temperature of vanadium redox flow battery (VRFB) will change with seasons and places. Hence, the broad temperature adaptability of VRFB is one of the key issues which affect its large-scale practical application. In our previous work, we have reported the impact of temperature (−35 °C–50 °C) on the static stability, physicochemical and electrochemical properties of five typical vanadium electrolytes (Electrochim. Acta, 2016, 187, 525). As a follow-up study, VRFB single cells are evaluated in this paper at a broad temperature range under current density of 40–200 mA cm −2 . The results show that VRFB can operate from −20 °C to 50 °C with acceptable energy efficiency under appropriate current densities (e.g. 65%–78% at 100 mA cm −2 ). Ohmic and polarization resistances of VRFB decrease with temperature while the voltage efficiency and electrolyte utilization present the opposite tendency. The fast crossover of the vanadium ions at high temperatures aggravates the capacity fading of the cell. Notably, VRFB suffers much more damage during alternate temperatures operation between moderate temperature and high temperature, which should be given special attention.

  5. Effects of the ohmic current on collective scattering spectra

    International Nuclear Information System (INIS)

    Castiglioni, S.; Lontano, M.; Tartari, U.

    1993-01-01

    A numerical and analytical study of the modifications induced in the collective scattering spectra by the ohmic current governing the equilibrium magnetic configuration in toroidal plasmas is presented. The spectral density function is calculated assuming equilibrium distributions for the (bulk and impurity) ion species and a Spitzer-like distribution to describe the response of the electrons to the applied DC electric field. As expected, the spectral asymmetries can be non-negligibly enhanced in the region of the ion-acoustic frequency. They reach their maxima for tangential scattering geometries, where the magnetic effects on the spectra are negligible. This justifies the assumption of the non-magnetized spectra. A theoretically motivated potential is shown to exist for a more detailed experimental investigation of the feasibility of current-density measurements in ohmic plasmas, based on collective scattering. (author)

  6. Pasteurization of citrus juices with ohmic heating to preserve the carotenoid profile

    OpenAIRE

    Achir , Nawel; Dhuique-Mayer , Claudie; Hadjal , Thiziri; Madani , Khodir; Pain , Jean-Pierre; Dornier , Manuel

    2016-01-01

    International audience; This study was carried out to assess, for the first time, the effect of ohmic heating on the carotenoid profile of two citrus fruit juices: grapefruit and blood orange. Two heat treatments were designed to obtain pasteurization values of 50 and 150 min (Tref= 70°C and z-value=10°C) with ohmic heating as compared to conventional heating. The results showed that xanthophyll losses could reach 70% for epoxyxanthophylls (cis-violaxanthin and cis-antheraxanthin) and 40% for...

  7. Influence of infrared final cooking on polycyclic aromatic hydrocarbon formation in ohmically pre-cooked beef meatballs.

    Science.gov (United States)

    Kendirci, Perihan; Icier, Filiz; Kor, Gamze; Onogur, Tomris Altug

    2014-06-01

    Effects of infrared cooking on polycyclic aromatic hydrocarbon (PAH) formation in ohmically pre-cooked beef meatballs were investigated. Samples were pre-cooked in a specially designed-continuous type ohmic cooking at a voltage gradient of 15.26V/cm for 92s. Infrared cooking was applied as a final cooking method at different combinations of heat fluxes (3.706, 5.678, 8.475kW/m(2)), application distances (10.5, 13.5, 16.5cm) and application durations (4, 8, 12min). PAHs were analyzed by using high performance liquid chromatography (HPLC) equipped with a fluorescence detector. The total PAH levels were detected to be between 4.47 and 64μg/kg. Benzo[a] pyrene (B[a]P) and PAH4 (sum of B[a]P, chrysene (Chr), benzo[a]anthracene (B[a]A) and benzo[b]fluoranthene (B[b]F)) levels detected in meatballs were below the EC limits. Ohmic pre-cooking followed by infrared cooking may be regarded as a safe cooking procedure of meatballs from a PAH contamination point of view. Copyright © 2014 Elsevier Ltd. All rights reserved.

  8. Transport and turbulence in TORE SUPRA ohmic discharges

    International Nuclear Information System (INIS)

    Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L.

    1992-01-01

    The mechanisms underlying the energy confinement behaviour in ohmic tokamak discharges are not yet understood. It is well known that the confinement time increases with the average density and saturates above a critical value of the density, but several explanations exist for this saturation. The present study is an analysis of a set of ohmic discharges in Tore Supra with I p =1.6 MA, B=4 T, R=2.35 m and a=0.78 m, where the average density was increased from 0.9 to 4.2 10 19 m -3 . For these plasma parameters, the energy confinement time given by magnetic measurements saturates for e > ≥ 2.5 10 19 m -3 . It is emphasized here that the onset of ionic turbulence is unlikely in Tore Supra. This conclusion relies on a transport analysis and turbulence measurements by CO 2 laser scattering, whose results are presented in this paper

  9. Desgn of a 20-MJ superconducting ohmic-heating coil

    International Nuclear Information System (INIS)

    Singh, S.K.; Murphy, J.H.; Janocko, M.A.; Haller, H.E.; Litz, D.C.; Eckels, P.W.; Rogers, J.D.; Thullen, P.

    1979-01-01

    Conceptual designs of 20-MJ superconducting coils which were developed to demonstrate the feasibility of an ohmic-heating system were discussed. The superconductor materials were NbTi and Nb 3 Sn for the pool boil and forced-flow cooling, respectively. The coils were designed to be cryostable for bipolar operation from +7 to -7 tesla maximum field within one second. The structural design addresses the distribution of structure and structural materials used in the pulsed field environment. The cyclic stresses anticipated and the fatigue limits of the structural materials were examined in view of the operating life of the coil. The coils were designed to generate the flux swings while simultaneously meeting the limitations imposed by cooling, insulation, current density and the stresses in the materials. Both the pool and forced cooled conductors have the same criterion for cryostability, i.e., the conductor must return to the superconducting state from an initial temperature of 20 0 K while the full transport current is flowing through the conductor

  10. The ohmic heating power supply for HL-1 tokamak

    International Nuclear Information System (INIS)

    Mingrui, Z.; Jiashun, C.

    1986-01-01

    A combination of capacitor banks, inductor and DC Fly wheel-Generator sets are used as ohmic heating power supply (OHPS) for HL-1, which is the largest tokamak in China. This system can give changeable waveform of current in a simple way, because of the use of protection for capacitor banks by changeable connection in easy way. Since the technology of forced zero current in the commutating breaker and synchronous self-triggering crowbar are used, the smooth conversion between the wave front provided by discharge of the capacitor banks and the flat top sustained by the inductor and flywheel realized. The performance of the system was tested by a dummy load and the system has been used in the HL-1 experiments. It is confirmed that this system is sufficiently available for the ohmic heating and has important effects on the long plasma lasting time on the order of 1 sec

  11. Investigation of the density turbulence in ohmic ASDEX plasmas

    International Nuclear Information System (INIS)

    Dodel, G.; Holtzhauer, E.

    1989-01-01

    A 119 μm homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs

  12. Investigation of the density turbulence in ohmic ASDEX plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Dodel, G; Holtzhauer, E [Stuttgart Univ. (Germany, F.R.). Inst. fuer Plasmaforschung; Giannone, L.; Niedermeyer, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany, F.R.)

    1989-01-01

    A 119 {mu}m homodyne laser scattering experiment is used on ASDEX to investigate wavenumber and frequency of the density fluctuations occuring in the different operational conditions of the machine. The changes of the density turbulence caused by additional heating are of primary interest with regard to a possible correlation to anomalous transport. Therefore, in the current experiment particular emphasis is placed on these investigations. On the other hand it is the ohmic phase which constitutes the least complicated physical situation in a tokamak and is therefore best suited to reveal the basic physical nature of the density turbulence. In the following we present a summary of our findings in the ohmic phase and make an attempt to compare these findings with what would be expected from the simplest model of density-gradient-driven driftwave turbulence saturated at the mixing-length level. (author) 3 refs., 4 figs.

  13. Ohmic H-mode and confinement in TCV

    International Nuclear Information System (INIS)

    Moret, J.M.; Anton, M.; Barry, S.

    1995-01-01

    The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied, has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1-0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence or absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ≅1.6) in long H-modes (1.5 s). (author) 9 figs., 9 refs

  14. Plasma interaction with tungsten samples in the COMPASS tokamak in ohmic ELMy H-modes

    International Nuclear Information System (INIS)

    Dimitrova, M; Weinzettl, V; Matejicek, J; Dejarnac, R; Stöckel, J; Havlicek, J; Panek, R; Popov, Tsv; Marinov, S; Costea, S

    2016-01-01

    This paper reports experimental results on plasma interaction with tungsten samples with or without pre-grown He fuzz. Under the experimental conditions, arcing was observed on the fuzzy tungsten samples, resulting in localized melting of the fuzz structure that did not extend into the bulk. The parallel power flux densities were obtained from the data measured by Langmuir probes embedded in the divertor tiles on the COMPASS tokamak. Measurements of the current-voltage probe characteristics were performed during ohmic ELMy H-modes reached in deuterium plasmas at a toroidal magnetic field B T = 1.15 T, plasma current I p = 300 kA and line-averaged electron density n e = 5×10 19 m -3 . The data obtained between the ELMs were processed by the recently published first-derivative probe technique for precise determination of the plasma potential and the electron energy distribution function (EEDF). The spatial profile of the EEDF shows that at the high-field side it is Maxwellian with a temperature of 5 -- 10 eV. The electron temperatures and the ion-saturation current density obtained were used to evaluate the radial distribution of the parallel power flux density as being in the order of 0.05 -- 7 MW/m 2 . (paper)

  15. On a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask for low-resistance ohmic contacts to AlGaN/GaN HEMTs

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunyan, S. S., E-mail: spartakmain@gmail.com; Pavlov, A. Yu.; Pavlov, B. Yu.; Tomosh, K. N.; Fedorov, Yu. V. [Russian Academy of Sciences, Institute of Ultrahigh Frequency Semiconductor Electronics (Russian Federation)

    2016-08-15

    The fabrication of a two-layer Si{sub 3}N{sub 4}/SiO{sub 2} dielectric mask and features of its application in the technology of non-fired epitaxially grown ohmic contacts for high-power HEMTs on AlGaN/GaN heterostructures are described. The proposed Si{sub 3}N{sub 4}/SiO{sub 2} mask allows the selective epitaxial growth of heavily doped ohmic contacts by nitride molecular-beam epitaxy and the fabrication of non-fired ohmic contacts with a resistance of 0.15–0.2 Ω mm and a smooth surface and edge morphology.

  16. Energy balance in the ohmically heated FT

    International Nuclear Information System (INIS)

    Bartiromo, R.; Brusati, M.; Cilloco, F.

    1981-01-01

    A typical discharge in the FT Tokamak at 60 kG has been studied in detail in order to derive the power balance between the ohmic input and the plasma losses. Impurity and radiation losses together with ion and electron energy balance are discussed. A power transport term for electrons is derived which is ascribed to anomalous thermal conduction. This resulting thermal transport is compared with those derived from different proposed scalings

  17. Ti/Al Ohmic Contacts to n-Type GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Gangfeng Ye

    2011-01-01

    Full Text Available Titanium/aluminum ohmic contacts to tapered n-type GaN nanowires with triangular cross-sections were studied. To extract the specific contact resistance, the commonly used transmission line model was adapted to the particular nanowire geometry. The most Al-rich composition of the contact provided a low specific contact resistance (mid 10−8 Ωcm2 upon annealing at 600 °C for 15 s, but it exhibited poor thermal stability due to oxidation of excess elemental Al remaining after annealing, as revealed by transmission electron microscopy. On the other hand, less Al-rich contacts required higher annealing temperatures (850 or 900 °C to reach a minimum specific contact resistance but exhibited better thermal stability. A spread in the specific contact resistance from contact to contact was tentatively attributed to the different facets that were contacted on the GaN nanowires with a triangular cross-section.

  18. Comparative Study Between Internal Ohmic Resistance and Capacity for Battery State of Health Estimation

    Directory of Open Access Journals (Sweden)

    M. Nisvo Ramadan

    2015-12-01

    Full Text Available In order to avoid battery failure, a battery management system (BMS is necessary. Battery state of charge (SOC and state of health (SOH are part of information provided by a BMS. This research analyzes methods to estimate SOH based lithium polymer battery on change of its internal resistance and its capacity. Recursive least square (RLS algorithm was used to estimate internal ohmic resistance while coloumb counting was used to predict the change in the battery capacity. For the estimation algorithm, the battery terminal voltage and current are set as the input variables. Some tests including static capacity test, pulse test, pulse variation test and before charge-discharge test have been conducted to obtain the required data. After comparing the two methods, the obtained results show that SOH estimation based on coloumb counting provides better accuracy than SOH estimation based on internal ohmic resistance. However, the SOH estimation based on internal ohmic resistance is faster and more reliable for real application

  19. Ohmic Treatment of Pear Purées (cv. ‘Conference’ in Terms of Some Quality Related Attributes

    Directory of Open Access Journals (Sweden)

    Oana Viorela NISTOR

    2015-06-01

    Full Text Available The effect of ohmic treatment on some quality related characteristics of pear purée (cv. ‘Conference’ such as color, reducing sugars, total phenols, rheological behavior and microbial counts, was analyzed. The inactivation kinetics of pectin methyl esterase (PME in pear crude extract and purée were studied by conventional thermal and ohmic treatments. Thermal inactivation of PME in crude extract was described by a first-order kinetic model. The activation energy values suggested the presence of two isoenzymes with different thermostability. The ohmic heating reduced PME activity by 96% at 25 V·cm-1. Minimal changes induced by ohmic heating on above quality related aspects were observed. Supporting this statement, there were no significant changes in the nutritional and sensorial attributes. It was reported an increase of 3% of reducing sugar content for the ohmic heated samples. The phenolic content of the treated samples registered a reduction of 59% in comparison with fresh pear purée. The pear purée presented a non-Newtonian pseudoplastic behaviour. The Ostwald de Waele model was fitted to rheograms and the consistency coefficient (m and flow behavior index (n were determined. Results obtained for the microbial charge were higher in the control samples. Thus, microbial counts showed complete inactivation of yeast and mold at voltage gradient higher than 17.5 V·cm-1.

  20. Ohmic H-mode and confinement in TCV

    International Nuclear Information System (INIS)

    Moret, J.-M.; Anton, M.; Barry, S.

    1995-01-01

    The unique flexibility of TCV for the creation of a wide variety of plasma shapes has been exploited to address some aspects of tokamak physics for which the shape may play an important role. The electron energy confinement time in limited ohmic L-mode plasmas whose elongation and triangularity have been varied (κ = 1.3 - 1.9, δ 0.1 - 0.7) has been observed to improve with elongation as κ 0.5 but to degrade with triangularity as (1 - 0.8 δ), for fixed safety factor. Ohmic H-modes have been obtained in several diverted and limited configurations, with some of the diverted discharges featuring large ELMs whose effects on the global confinement have been quantified. These effects depend on the configuration: in double null (DN) equilibria, a single ELM expels on average 2%, 6% and 2.5% of the particle, impurity and thermal energy content respectively, whilst in single null (SN) configurations, the corresponding numbers are 3.5%, 7% and 9%, indicative of larger ELM effects. The presence of absence of large ELMs in DN discharges has been actively controlled in a single discharge by alternately forcing one or other of the two X-points to lie on the separatrix, permitting stationary density and impurity content (Z eff ∼ 1.6) in long H-modes (1.5 s). (Author)

  1. Analysis of Electron Thermal Diffusivity and Bootstrap Current in Ohmically Heated Discharges after Boronization in the HT-7 Tokamak

    International Nuclear Information System (INIS)

    Zhang, X.M.; Wan, B.N.

    2005-01-01

    Significant improvements of plasma performance after ICRF boronization have been achieved in the full range of HT-7 operation parameters. Electron power balance is analyzed in the steady state ohmic discharges of the HT-7 tokamak. The ratio of the total radiation power to ohmic input power increases with increasing the central line-averaged electron density, but decreases with plasma current. It is obviously decreased after wall conditioning. Electron heat diffusivity χ e deduced from the power balance analysis is reduced throughout the main plasma after boronization. χ e decreases with increasing central line-averaged electron density in the parameter range of our study. After boronization, the plasma current profile is broadened and a higher current can be easily obtained on the HT-7 tokamak experiment. It is expected that the fact that the bootstrap current increases after boronization will explain these phenomena. After boronization, the plasma pressure gradient and the electron temperature near the boundary are larger than before, these factors influencing that the ratio of bootstrap current to total plasma current increases from several percent to above 10%

  2. Influence of infrared final cooking on color, texture and cooking characteristics of ohmically pre-cooked meatball.

    Science.gov (United States)

    Yildiz Turp, Gulen; Icier, Filiz; Kor, Gamze

    2016-04-01

    The objective of the current study was to improve the quality characteristics of ohmically pre-cooked beef meatballs via infrared cooking as a final stage. Samples were pre-cooked in a specially designed-continuous type ohmic cooker at a voltage gradient of 15.26 V/cm for 92 s. Infrared cooking was then applied to the pre-cooked samples at different combinations of heat fluxes (3.706, 5.678, and 8.475 kW/m(2)), application distances (10.5, 13.5, and 16.5 cm) and application durations (4, 8, and 12min). Effects of these parameters on color, texture and cooking characteristics of ohmically pre-cooked beef meatballs were investigated. The appearance of ohmically pre-cooked meatball samples was improved via infrared heating. A dark brown layer desired in cooked meatballs formed on the surface of the meatballs with lowest application distance (10.5 cm) and longest application duration (12 min). The texture of the samples was also improved with these parameters. However the cooking yield of the samples decreased at the longest application duration of infrared heating. Copyright © 2015 Elsevier Ltd. All rights reserved.

  3. Low resistance and transparent Ag/AZO ohmic contact to p-GaN

    International Nuclear Information System (INIS)

    Han, T.; Wang, T.; Gan, X. W.; Wu, H.; Shi, Y.; Liu, C.

    2014-01-01

    Silver (Ag)/ aluminum-doped zinc oxide (AZO) films were deposited on p-GaN by using electron beam evaporation. After the annealing process, current -voltage (I-V) measurements were carried out to determine the characteristic of the contacts. The Ag/AZO films annealed at 600 .deg. C were found to present an ohmic contact behavior. The specific contact resistance was calculated to be 9.76 x 10 -4 Ωcm 2 and the transmittance was over 80% for visibly light. The atomic force microscope was used to measure the aggregation of Ag grains which may have been the main factor in the formation of the Ag/AZO ohmic contact to p-GaN.

  4. Power deposition to the pump limiters in Tore-Supra with ohmic plasmas

    International Nuclear Information System (INIS)

    Guilhem, D.; Chatelier, M.; Chappuis Fleury, I.; Klepper, C.

    1990-01-01

    The modification of power scrape-off-length, λq, and power deposition are studied both with the horizontal limiter alone and with the full set of 7 pump limiters for 1MW ohmic plasmas in TORE-SUPRA. By making spatially resolved infrared surface temperature measurements during the plasma discharge, the magnitude and distribution of the energy flux can be derived. For comparison, the surface temperature of the horizontal pump limiter is calculated with a finite element code using a 3D description of the field lines, an exponential scrape-off-layer, and the pump limiter geometry. From comparison of the infrared images of the limiter we derived that the λq for power deposition was slightly less than 9 mm (±1mm) which is in agreement with the predicted design value of 10 mm. For an 8 seconds discharge, the maximum surface temperature on the horizontal limiter is 450 0 C. Inserting the 7 limiters does not modify λq (which becomes 10 mm). The power is shared by all the limiters and the maximum surface temperature on the horizontal limiter decreased to 320 0 C. These λq values have been independently measured by the integrated energy deposition on the horizontal limiter and other internal structures 5 cm into the scrape-off layer. These values agree with the infrared measurements in the two cases

  5. 1.0 MeV irradiation of OHMIC, MS, MIS contacts to InP

    International Nuclear Information System (INIS)

    Warren, C.E.; Wagner, B.F.; Anderson, W.A.

    1986-01-01

    The radiation effects of 1.0 MeV electrons with a dose of 10/sup 15/cm/sup -2/ to MS and MIS Schottky diodes on InP have been compared to the radiation effects of MIS diodes on GaAs and Si. The radiation effects to ohmic contacts were also investigated. The metal for the diodes on the InP was gold. Au/Ti/Al was used for the GaAs diodes and Cr for the silicon diodes. Oxide layers on InP were grown by anodization in 0.1 N KOH. Oxides to GaAs and Si were grown thermally. Ohmic contacts to InP were formed using AuGe/Ni and AuSn alloys, followed by annealing in N/sub 2//H/sub 2/ (85%/15%). Metal Semiconductor diodes on InP were found to be at least sensitive to the irradiation. The InP MS and MIS diodes showed only small changes in the current voltage (I-V) characteristic, whereas the GaAs and Si devices showed a decrease in reverse current after irradiation. The ohmic contact resistance was increased by a factor of 2 to 5 after irradiation

  6. Transition conductivity study of high temperature superconductor compounds: the role of fluctuations; Etude de la transition resistive sur des composes supraconducteurs a haute temperature critique le role des fluctuations

    Energy Technology Data Exchange (ETDEWEB)

    Pagnon, V

    1991-04-01

    This memory subject is the transition conductivity study of high temperature superconductors in corelation with their anisotropy. Systematic conductivity measurements were made on YBaCuO and BaSrCaCuO in relation with temperature from 4.2 K to 1200 K, and with a magnetic field up to 8 T in several directions. Oxygen order has an effect on the characteristics at YBaCuO transition conductivity. The activation energy for oxygen absorption is about 0.5eV. One method of analysis of the conductivity fluctuations about the transition temperature is proposed. Two separate rates are noticeable in YBaCuO compound. The 3 D fluctuations rate in the immediate neighbourghood of the transition lets place to the 2 D fluctuations rate at high temperature. Transitions temperatures governing each rate are different, that`s incompatible with the formula proposed by Lawrence and Doniach. On the other hand, the analogy with quasi-2 D magnetic systems seems more relevant. A magnetic field application or a lowering of oxygen concentration removes the 3 D fluctuations rate. Non ohmic effects observed at the transition conductivity foot are analysis as a non-linear 2 D excitation manifestation of the supraconductive phase. Finally, by measurements on strontium doped YBaCuO crystals, we confirm a metal-insulator transition along the C-Axe when oxygen concentration reduces. This is connected with the specific heat jump. All these results uplighten the fundamental bidimensional character of high transition temperature superconductivity.

  7. Methylation effect on the ohmic resistance of a poly-GC DNA-like chain

    Energy Technology Data Exchange (ETDEWEB)

    Moura, F.A.B.F. de, E-mail: fidelis@fis.ufal.br [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Lyra, M.L. [Instituto de Física, Universidade Federal de Alagoas, Maceió AL 57072-970 (Brazil); Almeida, M.L. de; Ourique, G.S.; Fulco, U.L.; Albuquerque, E.L. [Departamento de Biofísica e Farmacologia, Universidade Federal do Rio Grande do Norte, 59072-970, Natal-RN (Brazil)

    2016-10-14

    We determine, by using a tight-binding model Hamiltonian, the characteristic current–voltage (IxV) curves of a 5-methylated cytosine single strand poly-GC DNA-like finite segment, considering the methyl groups attached laterally to a random fraction of the cytosine basis. Striking, we found that the methylation significantly impacts the ohmic resistance (R) of the DNA-like segments, indicating that measurements of R can be used as a biosensor tool to probe the presence of anomalous methylation. - Highlights: • Ohmic resistance of finite segments of poly-CG DNA-like segments. • Possibility for the development of biosensor devices. • Methylation effect and electronic transport in DNA-like segments.

  8. CHALLENGES IN GENERATING HYDROGEN BY HIGH TEMPERATURE ELECTROLYSIS USING SOLID OXIDE CELLS

    Energy Technology Data Exchange (ETDEWEB)

    M. S. Sohal; J. E. O' Brien; C. M. Stoots; M. G. McKellar; J. S. Herring; E. A. Harvego

    2008-03-01

    Idaho National Laboratory’s (INL) high temperature electrolysis research to generate hydrogen using solid oxide electrolysis cells is presented in this paper. The research results reported here have been obtained in a laboratory-scale apparatus. These results and common scale-up issues also indicate that for the technology to be successful in a large industrial setting, several technical, economical, and manufacturing issues have to be resolved. Some of the issues related to solid oxide cells are stack design and performance optimization, identification and evaluation of cell performance degradation parameters and processes, integrity and reliability of the solid oxide electrolysis (SOEC) stacks, life-time prediction and extension of the SOEC stack, and cost reduction and economic manufacturing of the SOEC stacks. Besides the solid oxide cells, balance of the hydrogen generating plant also needs significant development. These issues are process and ohmic heat source needed for maintaining the reaction temperature (~830°C), high temperature heat exchangers and recuperators, equal distribution of the reactants into each cell, system analysis of hydrogen and associated energy generating plant, and cost optimization. An economic analysis of this plant was performed using the standardized H2A Analysis Methodology developed by the Department of Energy (DOE) Hydrogen Program, and using realistic financial and cost estimating assumptions. The results of the economic analysis demonstrated that the HTE hydrogen production plant driven by a high-temperature helium-cooled nuclear power plant can deliver hydrogen at a cost of $3.23/kg of hydrogen assuming an internal rate of return of 10%. These issues need interdisciplinary research effort of federal laboratories, solid oxide cell manufacturers, hydrogen consumers, and other such stakeholders. This paper discusses research and development accomplished by INL on such issues and highlights associated challenges that need to

  9. Phosphoric acid distribution in the membrane electrode assembly of high temperature proton exchange membrane fuel cells

    International Nuclear Information System (INIS)

    Kwon, Kyungjung; Park, Jung Ock; Yoo, Duck Young; Yi, Jung S.

    2009-01-01

    The ionomer content in electrode is one of the most important parameters for the high performance of fuel cells. The high temperature PEMFC based on phosphoric acid (PA)-doped polymer membrane with unhumidified reactant gases has a difficulty in controlling the liquid state PA ionomer content in electrode. To evaluate the PA content in electrode, the three techniques of cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and acid-base titration (ABT) are carried out in situ or ex situ. The properties of membrane electrode assembly (MEA) such as electrochemical surface area (ESA), ohmic resistance, charge transfer resistance, double layer capacitance and the amount of PA in MEA components (anode, cathode and membrane) are extracted by each technique. Ex situ CV with the usage of dry gases has a limitation in assessing the reliable ESA of unhumidified PEMFC. While in situ EIS presents some informative values of resistance and capacitance for understanding the PA distribution in MEA, its sensitivity to the PA content in MEA components needs to be higher for detecting a subtle change in PA distribution. Ex situ ABT supplies a clear PA distribution in MEA at room temperature but does not seem to reflect the operating state well at high temperatures. However, it can be used as a detection tool for the loss of the initial acid content in membrane during a long-term MEA durability study.

  10. Phosphoric acid distribution in the membrane electrode assembly of high temperature proton exchange membrane fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Kwon, Kyungjung [Fuel Cell Group, Energy Lab, SAIT, Samsung Electronics Co., Ltd., San 14-1, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-712 (Korea, Republic of)], E-mail: kfromberk@gmail.com; Park, Jung Ock; Yoo, Duck Young; Yi, Jung S. [Fuel Cell Group, Energy Lab, SAIT, Samsung Electronics Co., Ltd., San 14-1, Nongseo-dong, Giheung-gu, Yongin-si, Gyeonggi-do, 446-712 (Korea, Republic of)

    2009-11-01

    The ionomer content in electrode is one of the most important parameters for the high performance of fuel cells. The high temperature PEMFC based on phosphoric acid (PA)-doped polymer membrane with unhumidified reactant gases has a difficulty in controlling the liquid state PA ionomer content in electrode. To evaluate the PA content in electrode, the three techniques of cyclic voltammetry (CV), electrochemical impedance spectroscopy (EIS) and acid-base titration (ABT) are carried out in situ or ex situ. The properties of membrane electrode assembly (MEA) such as electrochemical surface area (ESA), ohmic resistance, charge transfer resistance, double layer capacitance and the amount of PA in MEA components (anode, cathode and membrane) are extracted by each technique. Ex situ CV with the usage of dry gases has a limitation in assessing the reliable ESA of unhumidified PEMFC. While in situ EIS presents some informative values of resistance and capacitance for understanding the PA distribution in MEA, its sensitivity to the PA content in MEA components needs to be higher for detecting a subtle change in PA distribution. Ex situ ABT supplies a clear PA distribution in MEA at room temperature but does not seem to reflect the operating state well at high temperatures. However, it can be used as a detection tool for the loss of the initial acid content in membrane during a long-term MEA durability study.

  11. Density scaling on n  =  1 error field penetration in ohmically heated discharges in EAST

    Science.gov (United States)

    Wang, Hui-Hui; Sun, You-Wen; Shi, Tong-Hui; Zang, Qing; Liu, Yue-Qiang; Yang, Xu; Gu, Shuai; He, Kai-Yang; Gu, Xiang; Qian, Jin-Ping; Shen, Biao; Luo, Zheng-Ping; Chu, Nan; Jia, Man-Ni; Sheng, Zhi-Cai; Liu, Hai-Qing; Gong, Xian-Zu; Wan, Bao-Nian; Contributors, EAST

    2018-05-01

    Density scaling of error field penetration in EAST is investigated with different n  =  1 magnetic perturbation coil configurations in ohmically heated discharges. The density scalings of error field penetration thresholds under two magnetic perturbation spectra are br\\propto n_e0.5 and br\\propto n_e0.6 , where b r is the error field and n e is the line averaged electron density. One difficulty in understanding the density scaling is that key parameters other than density in determining the field penetration process may also be changed when the plasma density changes. Therefore, they should be determined from experiments. The estimated theoretical analysis (br\\propto n_e0.54 in lower density region and br\\propto n_e0.40 in higher density region), using the density dependence of viscosity diffusion time, electron temperature and mode frequency measured from the experiments, is consistent with the observed scaling. One of the key points to reproduce the observed scaling in EAST is that the viscosity diffusion time estimated from energy confinement time is almost constant. It means that the plasma confinement lies in saturation ohmic confinement regime rather than the linear Neo-Alcator regime causing weak density dependence in the previous theoretical studies.

  12. The effects of degeneracy of the carrier ensemble on the energy loss rate and the high field mobility characteristics under the conditions of low lattice temperatures

    International Nuclear Information System (INIS)

    Basu, A.; Das, B.; Middya, T.R.; Bhattacharya, D.P.

    2017-01-01

    The rate of loss of energy of the non-equilibrium electrons to the acoustic mode lattice vibration in a degenerate semiconductor is obtained under the condition, when the lattice temperature is low enough, so that the traditional approximations like the elastic nature of the electron-phonon collisions and the truncation of the phonon distribution to the equipartition law are not valid any more. Using the results of the energy loss rate, the non-ohmic mobility is then calculated. Evaluating the loss rate and the non-ohmic mobility in degenerate samples of Si and Ge we find that significant changes in both the characteristics have been effected compared to that in the non-degenerate samples, in the regime of lower energy and for relatively lower fields. The effected changes are more significant the lower the lattice temperature is.

  13. Real-time protection of the Ohmic heating coil force limits in DIII-D

    International Nuclear Information System (INIS)

    Broesch, J.D.; Scoville, J.T.; Hyatt, A.W.; Coon, R.M.

    1997-11-01

    The maximum safe operating limits of the DIII-D tokamak are determined by the force produced in the ohmic heating coil and the toroidal field coil during a plasma pulse. This force is directly proportional to the product of the current in the coils. Historically, the current limits for each coil were set statically before each pulse without regard for the time varying nature of the currents. In order to allow the full time-dependent capability of the ohmic coil to be used, a system was developed for monitoring the product of the currents dynamically and making appropriate adjustments in real time. This paper discusses the purpose, implementation, and results of this work

  14. A high temperature superconductor notch filter for the Sardinia Radio Telescope

    Science.gov (United States)

    Bolli, Pietro; Cresci, Luca; Huang, Frederick; Mariotti, Sergio; Panella, Dario

    2018-04-01

    A High Temperature Superconductor filter operating in the C-band between 4200 and 5600 MHz has been developed for one of the radio astronomical receivers of the Sardinia Radio Telescope. The motivation was to attenuate an interference from a weather radar at 5640 MHz, whose power level exceeds the linear region of the first active stages of the receiver. A very sharp transition after the nominal maximum passband frequency is reached by combining a 6th order band-pass filter with a 6th order stop-band. This solution is competitive with an alternative layout based on a cascaded triplet filter. Three units of the filter have been measured with two different calibration approaches to investigate pros and cons of each, and data repeatability. The final performance figures of the filters are: ohmic losses of the order of 0.15-0.25 dB, matching better than -15 dB, and -30 dB attenuation at 5640 MHz. Finally, a more accurate model of the connection between external connector and microstrip shows a better agreement between simulations and experimental data.

  15. Investigation of optimum ohmic heating conditions for inactivation of Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes in apple juice.

    Science.gov (United States)

    Park, Il-Kyu; Ha, Jae-Won; Kang, Dong-Hyun

    2017-05-19

    Control of foodborne pathogens is an important issue for the fruit juice industry and ohmic heating treatment has been considered as one of the promising antimicrobial interventions. However, to date, evaluation of the relationship between inactivation of foodborne pathogens and system performance efficiency based on differing soluble solids content of apple juice during ohmic heating treatment has not been well studied. This study aims to investigate effective voltage gradients of an ohmic heating system and corresponding sugar concentrations (°Brix) of apple juice for inactivating major foodborne pathogens (E. coli O157:H7, S. Typhimurium, and L. monocytogenes) while maintaining higher system performance efficiency. Voltage gradients of 30, 40, 50, and 60 V/cm were applied to 72, 48, 36, 24, and 18 °Brix apple juices. At all voltage levels, the lowest heating rate was observed in 72 °Brix apple juice and a similar pattern of temperature increase was shown in18-48 °Brix juice samples. System performance coefficients (SPC) under two treatment conditions (30 V/cm in 36 °Brix or 60 V/cm in 48 °Brix juice) were relatively greater than for other combinations. Meanwhile, 5-log reductions of the three foodborne pathogens were achieved after treatment for 60 s in 36 °Brix at 30 V/cm, but this same reduction was observed in 48 °Brix juice at 60 V/cm within 20 s without affecting product quality. With respect to both bactericidal efficiency and SPC values, 60 V/cm in 48 °Brix was the most effective ohmic heating treatment combination for decontaminating apple juice concentrates.

  16. Population dynamics of excited atoms in non-Markovian environments at zero and finite temperature

    International Nuclear Information System (INIS)

    Zou Hong-Mei; Fang Mao-Fa

    2015-01-01

    The population dynamics of a two-atom system, which is in two independent Lorentzian reservoirs or in two independent Ohmic reservoirs respectively, where the reservoirs are at zero temperature or finite temperature, is studied by using the time-convolutionless master-equation method. The influences of the characteristics and temperature of a non-Markovian environment on the population of the excited atoms are analyzed. We find that the population trapping of the excited atoms is related to the characteristics and the temperature of the non-Markovian environment. The results show that, at zero temperature, the two atoms can be effectively trapped in the excited state both in the Lorentzian reservoirs and in the Ohmic reservoirs. At finite temperature, the population of the excited atoms will quickly decay to a nonzero value. (paper)

  17. Ohmic heating of peaches in the wide range of frequencies (50 Hz to 1 MHz).

    Science.gov (United States)

    Shynkaryk, Mykola V; Ji, Taehyun; Alvarez, Valente B; Sastry, Sudhir K

    2010-09-01

    The ohmic heating (OH) rate of peaches was studied at fixed electric field strength of 60 V.cm⁻¹, square-shaped instant reversal bipolar pulses, and frequencies varying within 50 Hz to 1 MHz. Thermal damage of tissue was evaluated from electrical admittivity. It showed that the time for half disruption (τ(T)) of tissue was required more than 10 h at temperatures below 40 °C. However, cellular thermal disruption occurred almost instantly (τ(T) 90 °C). Electrical conductivity σ(o) and admittivity σ(o)* of tissue at T(o)= 0 °C and their temperature coefficients (m, m*) were calculated. For freeze-thawed tissues, σ and σ* as well as m and m* were nearly indifferent to the frequency. However, for the intact tissue, both σ(o), σ(o)* and m, m* were frequency dependent. For freeze-thawed product, the power factor (P) was approximately equal to 1 and indifferent to the frequency and temperature. On the other hand, strong frequency dependence was observed for intact tissue with the minimum P approximately equal to 0.68 in the range of tens of kHz. The time required to reach a target temperature t(f) was evaluated. The t(f) increased with frequency up to the middle of the range of tens of kHz and thereafter continuously decreased. Samples exposed to the low-frequency electric field demonstrated faster electro-thermal damage rates. The textural relaxation data supported more intense damage kinetics at low-frequency OH. It has been demonstrated that a combination of high-frequency OH with pasteurization at moderate temperature followed by rapid cooling minimizes texture degradation of peach tissue. In this study, we investigated the electric field frequency effect on the rate of OH of peaches. It was shown that the time required for reaching the target temperature is strongly dependent upon the frequency. Samples exposed to low-frequency OH demonstrated higher electro-thermal damage rates. It has been shown that the combination of high-frequency OH with

  18. INCORPORATING AMBIPOLAR AND OHMIC DIFFUSION IN THE AMR MHD CODE RAMSES

    International Nuclear Information System (INIS)

    Masson, J.; Mulet-Marquis, C.; Chabrier, G.; Teyssier, R.; Hennebelle, P.

    2012-01-01

    We have implemented non-ideal magnetohydrodynamics (MHD) effects in the adaptive mesh refinement code RAMSES, namely, ambipolar diffusion and Ohmic dissipation, as additional source terms in the ideal MHD equations. We describe in details how we have discretized these terms using the adaptive Cartesian mesh, and how the time step is diminished with respect to the ideal case, in order to perform a stable time integration. We have performed a large suite of test runs, featuring the Barenblatt diffusion test, the Ohmic diffusion test, the C-shock test, and the Alfvén wave test. For the latter, we have performed a careful truncation error analysis to estimate the magnitude of the numerical diffusion induced by our Godunov scheme, allowing us to estimate the spatial resolution that is required to address non-ideal MHD effects reliably. We show that our scheme is second-order accurate, and is therefore ideally suited to study non-ideal MHD effects in the context of star formation and molecular cloud dynamics.

  19. Investigation of the Energy Confinement in Ohmic and LHCD Plasmas in HT-7

    International Nuclear Information System (INIS)

    Zhang Xiaoqing; Wan Baonian; Shen Biao; Hu Xiwei; Qian Jinping; Fan Hengyu; Ding Yonghua

    2006-01-01

    Investigation of the energy confinement in ohmic and lower hybrid current drive (LHCD) plasmas in HT-7 has been performed. In ohmic discharges at low densities the global energy confinement time τ E increases almost linearly with the density, saturates at a critical density (2.5 x 10 13 /cm 3 for HT-7) and is nearly constant at higher densities. The energy confinement time is in good agreement with the Neo-Alcator scaling law at different densities and currents. In the LHCD plasmas the global energy confinement time similar to that of the L-mode discharges has been observed to be in good agreement with the low confinement mode (L mode) scaling law of ITER89-P in higher electron density and plasma current

  20. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

    Directory of Open Access Journals (Sweden)

    Patrick H. Carey IV

    2017-09-01

    Full Text Available AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

  1. Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

    Science.gov (United States)

    Carey, Patrick H.; Yang, Jiancheng; Ren, F.; Hays, David C.; Pearton, S. J.; Jang, Soohwan; Kuramata, Akito; Kravchenko, Ivan I.

    2017-09-01

    AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 30 0°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 40 0°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.

  2. Ohmic heating coil power supply using thyristor circuit breaker in a thermonuclear fusion device

    International Nuclear Information System (INIS)

    Tani, Keiji; Shimada, Ryuichi; Tamura, Sanae; Yabuno, Kohei; Koseki, Shoichiro.

    1982-01-01

    In a large scale Tokamak thermonuclear fusion device such as the critical plasma testing facility (JT60) presently under construction, mechanical breakers such as vacuum and air breakers are mostly used for interrupting DC heavy current which is supplied to the ohmic heating coils of inductive energy accumulation method. The practical use of the DC breakers employing thyristors has just been started because the history of thyristor development is short and thristors are still expensive, in spite of the advantages. In this paper, the circuit is investigated in which the excellent high speed controllability of thyristors is fully utilized, while the economy is taken into accout, and the experiment carried out with a unit model is described. It was found that a thyristor switch, which was constructed by connecting the high speed thyristors of peak off-state voltage rating 2,000 V and mean current rating 500 A in direct parallel, was able to interrupt 12.7 kA current in the power supply circuit of ohmic heating coils developed this time. In addition, the switch configuration was able to be greatly simplified. When the multistage raising of plasma current is required, the raise can be performed with a single thyristor breaker because it can make high speed control. Therefore, the capacity of the breaker can be doubly and drastically reduced. Also, if current unbalance might occur between thyristor switch units, it gives no problem since the time of reverse voltage after current interruption dispersed smaller as current increased. (Wakatsuki, Y.)

  3. A modified phase coherence model for the non-linear c-axis V-I characteristics of highly anisotropic, high temperature superconductors

    CERN Document Server

    Luo Sheng; Huang Sai Jun; He Yu Sheng; Li Chun Guang; Zhang Xue Qiang

    2003-01-01

    A modified Ambegaokar-Halperin thermal-fluctuation model has been developed to describe the c-axis V-I characteristics and low-current ohmic resistance of highly anisotropic superconductors in a magnetic field parallel to the c-axis. The model assumes loss of phase coherence across the CuO-planes associated with the correlated motion of pancake vortices in the liquid state. The predicted V-I characteristics in the current-induced transition from the superconducting to the resistive state are in good agreement with measurements on a 2212-BSCCO single crystal as a function of temperature and field, provided the effect of the interlayer capacitance is taken into account. The measurements are consistent with a flux pancake correlation length within the CuO-planes varying as xi sub 0 /(T/T sub 0 - 1) supnu, where xi sub 0 = 1.57 +- 0.08 mu m and nu = 0.50 +- 0.01. Our measurements imply a current-dependent interlayer resistance above and below T sub c.

  4. Suns-VOC characteristics of high performance kesterite solar cells

    Science.gov (United States)

    Gunawan, Oki; Gokmen, Tayfun; Mitzi, David B.

    2014-08-01

    Low open circuit voltage (VOC) has been recognized as the number one problem in the current generation of Cu2ZnSn(Se,S)4 (CZTSSe) solar cells. We report high light intensity and low temperature Suns-VOC measurement in high performance CZTSSe devices. The Suns-VOC curves exhibit bending at high light intensity, which points to several prospective VOC limiting mechanisms that could impact the VOC, even at 1 sun for lower performing samples. These VOC limiting mechanisms include low bulk conductivity (because of low hole density or low mobility), bulk or interface defects, including tail states, and a non-ohmic back contact for low carrier density CZTSSe. The non-ohmic back contact problem can be detected by Suns-VOC measurements with different monochromatic illuminations. These limiting factors may also contribute to an artificially lower JSC-VOC diode ideality factor.

  5. Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

    International Nuclear Information System (INIS)

    Kim, Sun-Hong; Kim, Sung-Soo

    2010-01-01

    For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In 2 O 3 and Sn targets. The deposited ITO films show a typical value of electrical resistivity (∼10 -4 Ω m) and sheet resistance can be controlled in the range of 20-230 Ω by variation in film thickness. Microstrip line with characteristic impedance of 50 Ω was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S 11 ) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S 21 ) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 Ω. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.

  6. Characterization of recessed Ohmic contacts to AlGaN/GaN

    NARCIS (Netherlands)

    Hajlasz, M.; Donkers, J.J.T.M.; Sque, S.J.; Heil, S.B.S.; Gravesteijn, Dirk J; Rietveld, F.J.R.; Schmitz, Jurriaan

    2015-01-01

    In this work the choice of appropriate test structures and characterization methods for recessed Ohmic contacts to AlGaN/GaN is discussed. It is shown that, in the worst-case scenario, the prevailing assumption of identical sheet resistance between and under the contacts can lead to errors of up to

  7. Alternate ohmic heating coil arrangements for compact tokamak

    International Nuclear Information System (INIS)

    Dawson, J.W.; Moretti, A.; Stevens, H.C.; Thompson, K.

    1978-01-01

    The results for a number of ohmic heating (OH) coil arrangements which will allow the reduction of the major radius of Experimental Power Reactor (EPR) tokamaks will be given. In each case the results are compared, at least indirectly, to the reference case, which has the OH solenoid inside the central core of the reactor. The goal for the alternate geometries studied was to stay within the requirements imposed by the EPR conditions on the plasma and to produce as much or more OH V-s as the reference case

  8. Optimization of ohmic heating parameters for polyphenoloxidase inactivation in not-from-concentrate elstar apple juice using RSM

    DEFF Research Database (Denmark)

    Abedelmaksoud, Tarek; Mohsen, Sobhy Mohamed; Duedahl-Olesen, Lene

    2018-01-01

    In this study, optimization of ohmic heating (OH) process parameters (temperature and voltage gradient) to inactivate polyphenoloxidase (PPO) of not-from-concentrate (NFC) apple juice was conducted. Response surface methodology was used for optimization of OH parameters, where the voltage gradient...... and temperature on the PPO activity in the NFC apple juice was evaluated. Then the optimized condition was used to produce the NFC apple juice and the quality parameters were evaluated and compared to NFC apple juice prepared by conventional heating (CH). The studied parameters were: PPO activity, total phenolic......, total carotenoids, ascorbic acid, cloud value, color as well as physical properties (i.e., TSS, acidity, electric conductivity and viscosity). The reduction of PPO activities was 97 and 91% for OH (at 40 V/cm and 80 °C) and CH (at 90 °C and 60 s), respectively. The reduction of the ascorbic acid...

  9. Achieving improved ohmic confinement via impurity injection

    International Nuclear Information System (INIS)

    Bessenrodt-Weberpals, M.; Soeldner, F.X.

    1991-01-01

    Improved Ohmic Confinement (IOC) was obtained in ASDEX after a modification of the divertors that allowed a larger (deuterium and impurity) backflow from the divertor chamber. The quality of IOC depended crucially on the wall conditions, i.e. IOC was best for uncovered stainless steels walls and vanished with boronization. Furthermore, IOC was found only in deuterium discharges. These circumstances led to the idea that IOC correlates with the content of light impurities in the plasma. To substantiate this working hypothesis, we present observations in deuterium discharges with boronized wall conditions into which various impurities have been injected with the aim to induce IOC conditions. Firstly, the plasma behaviour in typical IOC discharges is characterized. Secondly, injection experiments with the low-Z impurities nitrogen and neon as well as with the high-Z impurities argon and krypton are discussed. Then, we concentrate on optimized neon puffing that yields the best confinement results which are similar to IOC conditions. Finally, these results are compared with eperiments in other tokamaks and some conclusions are drawn about the effects of the impurity puffing on both, the central and the edge plasma behaviour. (orig.)

  10. Monochromator for synchrotron light with temperature controlled by electrical current on silicon crystal

    Energy Technology Data Exchange (ETDEWEB)

    Cusatis, Cesar; Souza, Paulo E.N. [Universidade Federal do Parana (LORXI/UFPR), Curitiba, PR (Brazil). Dept. de Fisica. Lab. de Optica de Raios X e Instrumentacao; Franco, Margareth Kobayaski; Kakuno, Edson [Laboratorio Nacional de Luz Sincroton (LNLS), Campinas, SP (Brazil); Gobbi, Angelo; Carvalho Junior, Wilson de [Centro de Pesquisa e Desenvolvimento em Telecomunicacoes (CPqD), Campinas, SP (Brazil)

    2011-07-01

    resistivity between the two ohmic contacts across the crystal, that is, its resistance, a closed-loop system can be devised to control the temperature. For very high-energy resolution monochromators as in extreme back diffraction or nuclear resonance diffraction experiments, where the temperature instability is a major problem, the crystal temperature could be kept stabilized with this system. In this presentation, such system is described, and it was used to control the temperature of the first crystal of an X-ray diffraction beam line monochromator

  11. Sawtooth-free Ohmic discharges in ASDEX and the aspects of neoclassical ion transport

    International Nuclear Information System (INIS)

    Stroth, U.; Fussmann, G.; Krieger, K.; Mertens, V.; Wagner, F.; Bessenrodt-Weberpals, M.; Buechse, R.; Giannone, L.; Herrmann, H.; Simmet, E.; Steuer, K.H.

    1991-05-01

    Sawtooth-free Ohmic discharges can serve as a model case for a quiescent Tokamak plasma. We report on the properties and the global parameters of these discharges observed in ASDEX and make comments on the mechanism which seems to be responsible for the stabilization of the sawtooth instability. Stationary Ohmic discharge were used to investigate particle, impurity and energy transport in the absence of the sawtooth instability. Particular emphasis has been devoted to a comparison with the predictions of neoclassical theories. We find that the ion energy transport is on the level predicted by neoclassical theory and can explain particle and impurity transport with neoclassical inward drift velocities and diffusion coefficients with the same small anomalous contribution. In the central region of the plasma, where the power flux is low, very small values were found for the electron heat conductivity. (orig.)

  12. EPR ohmic heating energy storage

    International Nuclear Information System (INIS)

    Heck, F.M.; Stillwagon, R.E.; King, E.I.

    1977-01-01

    The Ohmic Heating (OH) Systems for all the Experimental Power Reactor (EPR) designs to date have all used temporary energy storage to assist in providing the OH current charge required to build up the plasma current. The energies involved (0.8 x 10 9 J to 1.9 x 10 9 J) are so large as to make capacitor storage impractical. Two alternative approaches are homopolar dc generators and ac generators. Either of these can be designed for pulse duty and can be made to function in a manner similar to a capacitor in the OH circuit and are therefore potential temporary energy storage devices for OH systems for large tokamaks. This study compared total OH system costs using homopolar and ac generators to determine their relative merits. The total system costs were not significantly different for either type of machine. The added flexibility and the lower maintenance of the ac machine system make it the more attractive approach

  13. Ohmic contacts to n+-GaN capped AlGaN/AlN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Wang Liang; Mohammed, Fitih M.; Ofuonye, Benedict; Adesida, Ilesanmi

    2007-01-01

    Investigations of Ti/Al/Mo/Au Ohmic contact formation, premetallization plasma treatment effects, and interfacial reactions for n + -GaN capped AlGaN/AlN/GaN heterostructures are presented. Ti thickness played an important role in determining contact performance. Transmission electron microscopy studies confirmed that thick Ti layer was necessary to fully consume the GaN cap and the top of AlGaN to enable a higher tunneling current flow. A direct correlation of plasma treatment conditions with I-V linearity, current level, and contact performance was established. The plasma-affected region is believed to extend over 20 nm into the AlGaN and GaN

  14. Influence of lateral and in-depth metal segregation on the patterning of ohmic contacts for GaN-based devices

    International Nuclear Information System (INIS)

    Redondo-Cubero, A; Alves, L C; Corregidor, V; Vázquez, L; Romero, M F; Muñoz, E; Pantellini, A; Lanzieri, C

    2014-01-01

    The lateral and in-depth metal segregation of Au/Ni/Al/Ti ohmic contacts for GaN-based high electron mobility transistors were analysed as a function of the Al barrier's thickness (d). The surface of the contacts, characterized by atomic force and scanning electron microscopy, shows a transition from a fractal network of rough and complex island-like structures towards smoother and cauliflower-like fronts with increasing d. Rutherford backscattering spectrometry and energy dispersive x-ray spectroscopy (EDXS) at different energies were used to confirm the in-depth intermixing of the metals relevant for the final contact resistance. EDXS mapping reveals a significant lateral segregation too, where the resulting patterns depend on two competing NiAl x and AuAl x phases, the intermixing being controlled by the available amount of Al. The optimum ohmic resistance is not affected by the patterning process, but is mainly dependent on the partial interdiffusion of the metals. (paper)

  15. High temperature electrochemistry related to light water reactor corrosion

    International Nuclear Information System (INIS)

    Nagy, Gabor; Kerner, Zsolt; Balog, Janos; Schiller, Robert

    2004-01-01

    The present work deals with corrosion problems related to conditions which prevail in a WWER primary circuit. We had a two-fold aim: (A) electrochemical methods were applied to characterise the hydrothermally produced oxides of the cladding material (Zr-1%Nb) of nuclear fuel elements used in Russian made power reactors of WWER type, and (B) a number of possible reference electrodes were investigated with a view to high temperature applications. (A) Test specimens made of the cladding material, Zr-1%Nb, were immersed into an autoclave, filled with an aqueous solution typical to a WWER primary circuit, and were treated for different periods of time up to 28 weeks. The electrode potentials were measured and electrochemical impedance spectra (EIS) were taken regularly both as a function of oxidation time and temperature. This rendered information on the overall kinetics of oxide growth. By combining in situ and ex situ impedance measurements, with a particular view of the temperature dependence of EIS, we concluded that the high frequency region of impedance spectra is relevant to the presence of oxide layer on the alloy. This part of the spectra was treated in terms of a parallel CPE||R ox equivalent circuit (CPE denoting constant phase element, R ox ohmic resistor). The CPE element was understood as a dispersive resistance in terms of the continuous time random walk theory by Scher and Lax. This enabled us to tell apart electrical conductance and oxide growth with a model of charge transfer and recombination within the oxide layer as rate determining steps. (B) Three types of reference electrodes were tested within the framework of the LIRES EU5 project: (i) external Ag/AgCl, (ii) Pt/Ir alloy and (iii) Pd(Pt) double polarised active electrode. The most stable of the electrodes was found to be the Pt/Ir one. The Ag/AgCl electrode showed good stability after an initial period of some days, while substantial drifts were found for the Pd(Pt) electrode. EIS spectra of the

  16. Two-step deposition of Al-doped ZnO on p-GaN to form ohmic contacts

    Science.gov (United States)

    Su, Xi; Zhang, Guozhen; Wang, Xiao; Chen, Chao; Wu, Hao; Liu, Chang

    2017-07-01

    Al-doped ZnO (AZO) thin films were deposited directly on p-GaN substrates by using a two-step deposition consisting of polymer assisted deposition (PAD) and atomic layer deposition (ALD) methods. Ohmic contacts of the AZO on p-GaN have been formed. The lowest sheet resistance of the two-step prepared AZO films reached to 145 Ω/sq, and the specific contact resistance reduced to 1.47 × 10-2 Ω·cm2. Transmittance of the AZO films remained above 80% in the visible region. The combination of PAD and ALD technique can be used to prepare p-type ohmic contacts for optoelectronics.

  17. A new method for the compensation of ohmic drop in galvanic cells

    NARCIS (Netherlands)

    Kooijman, D.J.; Sluyters, J.H.

    Generally the ohmic potential drop in a galvanic cell that occurs if a rectangular pulse is led through the cell, is compensated by means of a well-known bridge circuit. A better method making use of a phase reverter is described and its features are discussed. Exchange current densities up to 1200

  18. Conceptual designs of 50 kA 20 MJ superconducting ohmic heating coils

    International Nuclear Information System (INIS)

    Singh, S.K.; Murphy, J.H.; Janocko, M.A.; Haller, H.E.; Litz, D.C.; Eckels, P.W.; Rogers, J.D.; Thullen, P.

    1979-01-01

    Two designs of 20 Mj superconducting coils are described which were developed to demonstrate the feasibility of an ohmic heating system. NbTi and Nb;sub 3;Sn superconductors were considered for both 7 tesla and 9 tesla maximum fields. Cabled and braided conductors were investigated and the braided conductor is identified as the best alternative due to its high operating current densities and because of its porosity. The coils are designed to be cryostable for bipolar operation from +7 tesla to -7 tesla and from +9 tesla to -9 tesla maximum fields within 1 sec. The structural design addresses the distribution of structure and structural materials used in the pulsed field environment. Immersion cooled (pool boil) and forced flow cooled coils are described. 2 refs

  19. Al and Cu Implantation into Silicon Substrate for Ohmic Contact in Solar Cell Fabrication

    International Nuclear Information System (INIS)

    Sri Sulamdari; Sudjatmoko; Wirjoadi; Yunanto; Bambang Siswanto

    2002-01-01

    Research on the implantation of Al and Cu ions into silicon substrate for ohmic contact in solar cell fabrication has been carried using ion accelerator machine. Al and Cu ions are from 98% Al and 99.9% Cu powder ionized in ion source system. provided in ion implantor machine. Before implantation process, (0.5 x 1) cm 2 N type and P type silicon were washed in water and then etched in Cp-4A solution. After that, P type silicon were implanted with Al ions and N type silicon were implanted with Cu ions with the ions dose from 10 13 ion/cm 2 - 10 16 ion/cm 2 and energy 20 keV - 80 keV. Implanted samples were then annealed at temperature 400 o C - 850 o C. Implanted and annealed samples were characterized their resistivities using four point probe FPP-5000. It was found that at full electrically active conditions the ρ s for N type was 1.30 x 10 8 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and annealing temperature 500 o C. While for P type, the ρ s was 1.13 x 10 2 Ω/sq, this was achieved at ion dose 10 13 ion/cm 2 and energy 40 keV, and annealing temperature 500 o C. (author)

  20. Quantum correlation of high dimensional system in a dephasing environment

    Science.gov (United States)

    Ji, Yinghua; Ke, Qiang; Hu, Juju

    2018-05-01

    For a high dimensional spin-S system embedded in a dephasing environment, we theoretically analyze the time evolutions of quantum correlation and entanglement via Frobenius norm and negativity. The quantum correlation dynamics can be considered as a function of the decoherence parameters, including the ratio between the system oscillator frequency ω0 and the reservoir cutoff frequency ωc , and the different environment temperature. It is shown that the quantum correlation can not only measure nonclassical correlation of the considered system, but also perform a better robustness against the dissipation. In addition, the decoherence presents the non-Markovian features and the quantum correlation freeze phenomenon. The former is much weaker than that in the sub-Ohmic or Ohmic thermal reservoir environment.

  1. Innovative Facet Passivation for High-Brightness Laser Diodes

    Science.gov (United States)

    2016-02-05

    processing will prevent oxidation of the front facet, the leading contaminant from the ambient. By keeping the MBE growth temperatures between 400 and 500 ...suitably adjusted Al mole fraction and growth recipes . Specifically, MBE-AlGaAs passivation can apply to slab pumped lasers (e.g. 808 nm), fiber...li ty OHMIC CONTACTS PASSIVATION LAYER 400 OC 500 OC THERMAL “ SWEET SPOT ” POLYCRYTALLINE / LATTICE MIS-MATCHED PASSIVATION OHMIC CONTACT DEGRADATION

  2. Effect of continuous ohmic heating to inactivate Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice.

    Science.gov (United States)

    Lee, S-Y; Sagong, H-G; Ryu, S; Kang, D-H

    2012-04-01

    The purpose of this study was to investigate the efficacy of continuous ohmic heating for reducing Escherichia coli O157:H7, Salmonella Typhimurium and Listeria monocytogenes in orange juice and tomato juice. Orange juice and tomato juice were treated with electric field strengths in the range of 25-40 V cm(-1) for different treatment times. The temperature of the samples increased with increasing treatment time and electric field strength. The rate of temperature change for tomato juice was higher than for orange juice at all voltage gradients applied. Higher electric field strength or longer treatment time resulted in a greater reduction of pathogens. Escherichia coli O157:H7 was reduced by more than 5 log after 60-, 90- and 180-s treatments in orange juice with 40, 35 and 30 V cm(-1) electric field strength, respectively. In tomato juice, treatment with 25 V cm(-1) for 30 s was sufficient to achieve a 5-log reduction in E. coli O157:H7. Similar results were observed in Salm. Typhimurium and L. monocytogenes. The concentration of vitamin C in continuous ohmic heated juice was significantly higher than in conventionally heated juice (P pasteurize fruit and vegetable juices in a short operating time and that the effect of inactivation depends on applied electric field strengths, treatment time and electric conductivity. © 2012 The Authors. Journal of Applied Microbiology © 2012 The Society for Applied Microbiology.

  3. Observations of core toroidal rotation reversals in Alcator C-Mod ohmic L-mode plasmas

    International Nuclear Information System (INIS)

    Rice, J.E.; Reinke, M.L.; Podpaly, Y.A.; Churchill, R.M.; Cziegler, I.; Dominguez, A.; Ennever, P.C.; Fiore, C.L.; Granetz, R.S.; Greenwald, M.J.; Hubbard, A.E.; Hughes, J.W.; Irby, J.H.; Ma, Y.; Marmar, E.S.; McDermott, R.M.; Porkolab, M.; Duval, B.P.; Bortolon, A.; Diamond, P.H.

    2011-01-01

    Direction reversals of intrinsic toroidal rotation have been observed in Alcator C-Mod ohmic L-mode plasmas following modest electron density or toroidal magnetic field ramps. The reversal process occurs in the plasma interior, inside of the q = 3/2 surface. For low density plasmas, the rotation is in the co-current direction, and can reverse to the counter-current direction following an increase in the electron density above a certain threshold. Reversals from the co- to counter-current direction are correlated with a sharp decrease in density fluctuations with k R ≥ 2 cm -1 and with frequencies above 70 kHz. The density at which the rotation reverses increases linearly with plasma current, and decreases with increasing magnetic field. There is a strong correlation between the reversal density and the density at which the global ohmic L-mode energy confinement changes from the linear to the saturated regime.

  4. Transport simulations of ohmic ignition experiment: IGNITEX

    International Nuclear Information System (INIS)

    Uckan, N.A.; Howe, H.C.

    1987-01-01

    The IGNITEX device, proposed by Rosenbluth et al., is a compact, super-high-field, high-current, copper-coil tokamak envisioned to reach ignition with ohmic (OH) heating alone. Several simulations of IGNITEX were made with a 0-D global model and with the 1-D PROCTR transport code. It is shown that OH ignition is a sensitive function of the assumptions about density profile, wall reflectivity of synchrotron radiation, impurity radiation, plasma edge conditions, and additional anomalous losses. In IGNITEX, OH ignition is accessible with nearly all scalings based on favorable OH confinement (such as neo-Alcator). Also, OH ignition appears to be accessible for most (not all) L-mode scalings (such as Kaye-Goldston), provided that the density profile is not too broad (parabolic or more peaked profiles are needed), Z/sub eff/ is not too large (≤2), and anomalous radiation and alpha losses and/or other enhanced transport losses (/eta//sub i/ modes, edge convective energy losses, etc.) are not present. In IGNITEX, because the figure-of-merit parameters (aB 0 2 /q* /approximately/ IB 0 , etc.) are large, ignition can be accessed (either with OH heating alone or with the aid of a small amount of auxiliary power) at relatively low beta, far from stability limits. Once the plasma is ignited, thermal runaway is prevented naturally by a combination of increased synchrotron radiation, burnout of the fuel in the plasma core and replacement by thermal alphas, and the reduction in the thermal plasma confinement assumed in L-mode-like scalings. 12 refs., 5 figs., 1 tab

  5. Transport simulations of ohmic ignition experiment: IGNITEX

    International Nuclear Information System (INIS)

    Uckan, N.A.; Howe, H.C.

    1987-12-01

    The IGNITEX device, proposed by Rosenbluth et al., is a compact, super-high-field, high-current, copper-coil tokamak envisioned to reach ignition with ohmic (OH) heating alone. Several simulations of IGNITEX were made with a 0-D global model and with the 1-D PROCTR transport code. It is shown that OH ignition is a sensitive function of the assumptions about density profile, wall reflectivity of synchrotron radiation, impurity radiation, plasma edge conditions, and additional anomalous losses. In IGNITEX, OH ignition is accessible with nearly all scalings based on favorable OH confinement (such as neo-Alcator). Also, OH ignition appears to be accessible for most (not all) L-mode scalings (such as Kaye-Goldston), provided that the density profile is not too broad (parabolic or more peaked profiles are needed), Z/sub eff/ is not too large, and anomalous radiation and alpha losses and/or other enhanced transport losses (eta/sub i/ modes, edge convective energy losses, etc.) are not present. In IGNITEX, because the figure-of-merit parameters are large, ignition can be accessed (either with OH heating alone or with the aid of a small amount of auxiliary power) at relatively low beta, far from stability limits. Once the plasma is ignited, thermal runaway is prevented naturally by a combination of increased synchrotron radiation, burnout of the fuel in the plasma core and replacement by thermal alphas, and the reduction in the thermal plasma confinement assumed in L-mode-like scalings. 12 refs., 5 figs., 1 tab

  6. Two types of photomultiplier voltage dividers for high and changing count rates

    International Nuclear Information System (INIS)

    Reiter, W.L.; Stengl, G.

    1980-01-01

    We report on the design of two types of voltage distribution circuits for high stability photomultiplier operation. 'Type A' voltage divider is an ohmic voltage divider with high bleeder current (up to 10 mA) and the resistor chain split at one of the last dynodes, usually the dynode where the analog signal is derived from. This simple constructive measure improves the stability of the dynode voltage by a factor of 5 compared with an unsplit conventional resistor chain. 'Type B' is a novel active voltage divider using cold cathode tubes ar regulating elements. This voltage divider exhibits excellent temperature stability (about 10 -4 / 0 C). With 'type B' an equal stability compared with conventional ohmic dividers can be achieved at a bleeder current smaller by one order of magnitude. Of course both concepts, 'type A' and 'type B', can be combined. (orig.)

  7. Effect of Boronization on Ohmic Plasmas in NSTX

    International Nuclear Information System (INIS)

    Skinner, C.H.; Kugel, H.; Maingi, R.; Wampler, W.R.; Blanchard, W.; Bell, M.; Bell, R.; LeBlanc, B.; Gates, D.; Kaye, S.; LaMarche, P.; Menard, J.; Mueller, D.; Na, H.K.; Nishino, N.; Paul, S.; Sabbagh, S.; Soukhanovskii, V.

    2001-01-01

    Boronization of the National Spherical Torus Experiment (NSTX) has enabled access to higher density, higher confinement plasmas. A glow discharge with 4 mTorr helium and 10% deuterated trimethyl boron deposited 1.7 g of boron on the plasma facing surfaces. Ion beam analysis of witness coupons showed a B+C areal density of 10 to the 18 (B+C) cm to the -2 corresponding to a film thickness of 100 nm. Subsequent ohmic discharges showed oxygen emission lines reduced by x15, carbon emission reduced by two and copper reduced to undetectable levels. After boronization, the plasma current flattop time increased by 70% enabling access to higher density, higher confinement plasmas

  8. An ohmic heating circuit for the CASTOR tokamak

    International Nuclear Information System (INIS)

    Valovic, M.

    1989-07-01

    To extend the duration of the CASTOR tokamak discharge to the limit given by the toroidal magnetic field pulse, a simple ohmic heating circuit is proposed. It exploits two condenser banks charged to different voltages and switched by means of an ignitron switch. The circuit parameters are chosen so as to achieve optimum current ramp-up and flat-top phases. The choice of parameters was checked using a simple computer code, with the nonlinear magnetization of the transformer core being taken into account. The results of calculation are compared with those of an experimental test shot with a discharge current and duration of 19 kA and 40 ms, respectively. (J.U.). 3 figs., 4 refs

  9. Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaN

    Energy Technology Data Exchange (ETDEWEB)

    Ke, Wen-Cheng, E-mail: wcke@mail.ntust.edu.tw; Yang, Cheng-Yi [Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei 106, Taiwan (China); Lee, Fang-Wei; Chen, Wei-Kuo [Department of Electrophysics, National Chiao-Tung University, Hsin-Chu 300, Taiwan (China); Huang, Hao-Ping [Department of Mechanical Engineering, Yuan Ze University, Chung-Li 320, Taiwan (China)

    2015-10-21

    This study developed an Ohmic contact formation method for a ZnO:Al (AZO) transparent conductive layer on p-GaN films involving the introduction of an indium oxynitride (InON) nanodot interlayer. An antisurfactant pretreatment was used to grow InON nanodots on p-GaN films in a RF magnetron sputtering system. A low specific contact resistance of 1.12 × 10{sup −4} Ω cm{sup 2} was achieved for a sample annealed at 500 °C for 30 s in nitrogen ambient and embedded with an InON nanodot interlayer with a nanodot density of 6.5 × 10{sup 8} cm{sup −2}. By contrast, a sample annealed in oxygen ambient exhibited non-Ohmic behavior. X-ray photoemission spectroscopy results showed that the oxygen vacancy (V{sub o}) in the InON nanodots played a crucial role in carrier transport. The fitting I–V characteristic curves indicated that the hopping mechanism with an activation energy of 31.6 meV and trap site spacing of 1.1 nm dominated the carrier transport in the AZO/InON nanodot/p-GaN sample. Because of the high density of donor-like oxygen vacancy defects at the InON nanodot/p-GaN interface, positive charges from the underlying p-GaN films were absorbed at the interface. This led to positive charge accumulation, creating a narrow depletion layer; therefore, carriers from the AZO layer passed through InON nanodots by hopping transport, and subsequently tunneling through the interface to enter the p-GaN films. Thus, AZO Ohmic contact can be formed on p-GaN films by embedding an InON nanodot interlayer to facilitate trap-assisted tunneling.

  10. Temperature rise and stress induced by microcracks in accelerating structures

    Directory of Open Access Journals (Sweden)

    W. Zhu

    2010-12-01

    Full Text Available The temperature rise and induced stress due to Ohmic heating in the vicinity of microcracks on the walls of high-gradient accelerating structures are considered. The temperature rise and induced stress depend on the orientation of the crack with respect to the rf magnetic field, the shape of the crack, and the power and duration of the rf pulse. Under certain conditions the presence of cracks can double the temperature rise over that of a smooth surface. Stress at the bottom of the cracks can be several times larger than that of the case when there are no cracks. We study these effects both analytically and by computer simulation. It is shown that the stress in cracks is maximal when the crack depth is on the order of the thermal penetration depth.

  11. High-Temperature Piezoelectric Sensing

    Directory of Open Access Journals (Sweden)

    Xiaoning Jiang

    2013-12-01

    Full Text Available Piezoelectric sensing is of increasing interest for high-temperature applications in aerospace, automotive, power plants and material processing due to its low cost, compact sensor size and simple signal conditioning, in comparison with other high-temperature sensing techniques. This paper presented an overview of high-temperature piezoelectric sensing techniques. Firstly, different types of high-temperature piezoelectric single crystals, electrode materials, and their pros and cons are discussed. Secondly, recent work on high-temperature piezoelectric sensors including accelerometer, surface acoustic wave sensor, ultrasound transducer, acoustic emission sensor, gas sensor, and pressure sensor for temperatures up to 1,250 °C were reviewed. Finally, discussions of existing challenges and future work for high-temperature piezoelectric sensing are presented.

  12. Temperature Gradient in Hall Thrusters

    International Nuclear Information System (INIS)

    Staack, D.; Raitses, Y.; Fisch, N.J.

    2003-01-01

    Plasma potentials and electron temperatures were deduced from emissive and cold floating probe measurements in a 2 kW Hall thruster, operated in the discharge voltage range of 200-400 V. An almost linear dependence of the electron temperature on the plasma potential was observed in the acceleration region of the thruster both inside and outside the thruster. This result calls into question whether secondary electron emission from the ceramic channel walls plays a significant role in electron energy balance. The proportionality factor between the axial electron temperature gradient and the electric field is significantly smaller than might be expected by models employing Ohmic heating of electrons

  13. Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

    Energy Technology Data Exchange (ETDEWEB)

    Joglekar, S.; Azize, M.; Palacios, T. [Microsystems Technology Laboratories, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139 (United States); Beeler, M.; Monroy, E. [Université Grenoble-Alpes, 38000 Grenoble (France); CEA Grenoble, INAC-PHELIQS, 38000 Grenoble (France)

    2016-07-25

    Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.

  14. Reducing the acidity of Arabica coffee beans by ohmic fermentation technology

    OpenAIRE

    Reta; Mursalim; Salengke; Junaedi, M.; Mariati; Sopade, P.

    2017-01-01

    Coffee is widely consumed not only because of its typical taste, but coffee has antioxidant properties because of its polygons, and it stimulates brain performance. The main problem with the consumption of coffee is its content of caffeine. Caffeine when consumed in excess, can increase muscle tension, stimulate the heart, and increase the secretion of gastric acid. In this research, we applied ohmic fermentation technology, which is specially designed to mimic the stomach. Arabica coffee has...

  15. On the breakdown modes and parameter space of Ohmic Tokamak startup

    Science.gov (United States)

    Peng, Yanli; Jiang, Wei; Zhang, Ya; Hu, Xiwei; Zhuang, Ge; Innocenti, Maria; Lapenta, Giovanni

    2017-10-01

    Tokamak plasma has to be hot. The process of turning the initial dilute neutral hydrogen gas at room temperature into fully ionized plasma is called tokamak startup. Even with over 40 years of research, the parameter ranges for the successful startup still aren't determined by numerical simulations but by trial and errors. However, in recent years it has drawn much attention due to one of the challenges faced by ITER: the maximum electric field for startup can't exceed 0.3 V/m, which makes the parameter range for successful startup narrower. Besides, this physical mechanism is far from being understood either theoretically or numerically. In this work, we have simulated the plasma breakdown phase driven by pure Ohmic heating using a particle-in-cell/Monte Carlo code, with the aim of giving a predictive parameter range for most tokamaks, even for ITER. We have found three situations during the discharge, as a function of the initial parameters: no breakdown, breakdown and runaway. Moreover, breakdown delay and volt-second consumption under different initial conditions are evaluated. In addition, we have simulated breakdown on ITER and confirmed that when the electric field is 0.3 V/m, the optimal pre-filling pressure is 0.001 Pa, which is in good agreement with ITER's design.

  16. Design of a multistage 250 kJ capacitor bank for ohmic transformer of tokamak ''ADITYA''

    International Nuclear Information System (INIS)

    Sathyanarayana, K.; Saxena, Y.C.; John, P.I.; Pujara, H.D.; Jain, K.K.

    1993-01-01

    Tokamaks require toroidal loop voltage for breakdown of the neutral gas, current rise, and the flat top phase. The temporal profile of the loop voltage established by the change of flux linked by the ohmic transformer has to be a noncosine waveform. In this paper a multistage capacitor bank is described which was used to energize the ohmic transformer in tokamak ADITYA with a major radius of 0.75 m, minor radius of 0.25 m, and a toroidal field of 1.5 T at the plasma center. A combination of capacitors charged to different voltages are switched in at appropriate times, to realize an experimental demand for initial high loop voltage followed by a lower sustaining loop voltage. Theoretical prediction for the duration of the secondary loop voltage as a function of circuit parameters, for a fast bank operation of 6 kV, slow bank, 4--4.5 kV, and slow bank, 2--2.5 kV yield t 0 =1.25 mS, t 1 =4.95 mS, and t 2 =24.1 mS. These values are in close agreement to the measured values of t 0 =1.39 mS, t 1 =5.7 mS, and t 2 =23.7 mS. The trigger delays to the various capacitor bank sections are parameter dependent. To avoid repetitive adjustments in the delays, a novel scheme for consistent triggering is also highlighted

  17. The particle fluxes in the edge plasma during discharges with improved ohmic confinement in ASDEX

    International Nuclear Information System (INIS)

    Verbeek, H.; Poschenrieder, W.; Fu, J.K.; Soeldner, F.X.

    1989-01-01

    In the recent experimental period of ASDEX a new regime of improved ohmic confinement (IOC) was discovered. So far the energy confinement time τ E increased linearly with increasing line averaged density n e up to n e = 3·10 13 cm -3 saturated, however, at higher densities. In the new IOC regime τ E increases further with increasing n e up to ∼5·10 13 cm -3 . The IOC regime is achieved for D 2 discharges only since the last modification of the ASDEX divertor which substantially increased the recycling from the divertor through the divertor slits. It also led to a reduction in gas consumption for a discharge by a factor of about 2. As it appears, the high fuelling rate required during a fast ramp-up of the plasma density leads to a transition into the Saturated Ohmic Confinememt (SOC) regime. Vice versa, the strong reduction in the external gas feed when the preprogrammed density plateau is reached seems to be essential for establishing the IOC. It is characterized by a pronounced peaking of the density profile. During the transition from the SOC to the IOC regime large variations in the signals of all edge and divertor related diagnostics are observed. In this paper we concentrate on the results of the Low Energy Neutral Particle Analyser (LENA), the sniffer probe, on the mass spectrometers measuring the divertor exhaust pressure. (author) 7 refs., 2 figs

  18. Bias induced transition from an ohmic to a non-ohmic interface in supramolecular tunneling junctions with Ga2O3/EGaIn top electrodes.

    Science.gov (United States)

    Wimbush, Kim S; Fratila, Raluca M; Wang, Dandan; Qi, Dongchen; Liang, Cao; Yuan, Li; Yakovlev, Nikolai; Loh, Kian Ping; Reinhoudt, David N; Velders, Aldrik H; Nijhuis, Christian A

    2014-10-07

    This study describes that the current rectification ratio, R ≡ |J|(-2.0 V)/|J|(+2.0 V) for supramolecular tunneling junctions with a top-electrode of eutectic gallium indium (EGaIn) that contains a conductive thin (0.7 nm) supporting outer oxide layer (Ga2O3), increases by up to four orders of magnitude under an applied bias of >+1.0 V up to +2.5 V; these junctions did not change their electrical characteristics when biased in the voltage range of ±1.0 V. The increase in R is caused by the presence of water and ions in the supramolecular assemblies which react with the Ga2O3/EGaIn layer and increase the thickness of the Ga2O3 layer. This increase in the oxide thickness from 0.7 nm to ∼2.0 nm changed the nature of the monolayer-top-electrode contact from an ohmic to a non-ohmic contact. These results unambiguously expose the experimental conditions that allow for a safe bias window of ±1.0 V (the range of biases studies of charge transport using this technique are normally conducted) to investigate molecular effects in molecular electronic junctions with Ga2O3/EGaIn top-electrodes where electrochemical reactions are not significant. Our findings also show that the interpretation of data in studies involving applied biases of >1.0 V may be complicated by electrochemical side reactions which can be recognized by changes of the electrical characteristics as a function voltage cycling or in current retention experiments.

  19. Highly efficient high temperature electrolysis

    DEFF Research Database (Denmark)

    Hauch, Anne; Ebbesen, Sune; Jensen, Søren Højgaard

    2008-01-01

    High temperature electrolysis of water and steam may provide an efficient, cost effective and environmentally friendly production of H-2 Using electricity produced from sustainable, non-fossil energy sources. To achieve cost competitive electrolysis cells that are both high performing i.e. minimum...... internal resistance of the cell, and long-term stable, it is critical to develop electrode materials that are optimal for steam electrolysis. In this article electrolysis cells for electrolysis of water or steam at temperatures above 200 degrees C for production of H-2 are reviewed. High temperature...... electrolysis is favourable from a thermodynamic point of view, because a part of the required energy can be supplied as thermal heat, and the activation barrier is lowered increasing the H-2 production rate. Only two types of cells operating at high temperature (above 200 degrees C) have been described...

  20. Parametric dependencies of JET electron temperature profiles

    Energy Technology Data Exchange (ETDEWEB)

    Schunke, B [Commission of the European Communities, Abingdon (United Kingdom). JET Joint Undertaking; Imre, K; Riedel, K [New York Univ., NY (United States)

    1994-07-01

    The JET Ohmic, L-Mode and H-Mode electron temperature profiles obtained from the LIDAR Thomson Scattering Diagnostic are parameterized in terms of the normalized flux parameter and a set of the engineering parameters like plasma current, toroidal field, line averages electron density... It is shown that the electron temperature profiles fit a log-additive model well. It is intended to use the same model to predict the profile shape for D-T discharges in JET and in ITER. 2 refs., 5 figs.

  1. Quench of non-Markovian coherence in the deep sub-Ohmic spin–boson model: A unitary equilibration scheme

    International Nuclear Information System (INIS)

    Yao, Yao

    2015-01-01

    The deep sub-Ohmic spin–boson model shows a longstanding non-Markovian coherence at low temperature. Motivating to quench this robust coherence, the thermal effect is unitarily incorporated into the time evolution of the model, which is calculated by the adaptive time-dependent density matrix renormalization group algorithm combined with the orthogonal polynomials theory. Via introducing a unitary heating operator to the bosonic bath, the bath is heated up so that a majority portion of the bosonic excited states is occupied. It is found in this situation the coherence of the spin is quickly quenched even in the coherent regime, in which the non-Markovian feature dominates. With this finding we come up with a novel way to implement the unitary equilibration, the essential term of the eigenstate-thermalization hypothesis, through a short-time evolution of the model

  2. High temperature materials and mechanisms

    CERN Document Server

    2014-01-01

    The use of high-temperature materials in current and future applications, including silicone materials for handling hot foods and metal alloys for developing high-speed aircraft and spacecraft systems, has generated a growing interest in high-temperature technologies. High Temperature Materials and Mechanisms explores a broad range of issues related to high-temperature materials and mechanisms that operate in harsh conditions. While some applications involve the use of materials at high temperatures, others require materials processed at high temperatures for use at room temperature. High-temperature materials must also be resistant to related causes of damage, such as oxidation and corrosion, which are accelerated with increased temperatures. This book examines high-temperature materials and mechanisms from many angles. It covers the topics of processes, materials characterization methods, and the nondestructive evaluation and health monitoring of high-temperature materials and structures. It describes the ...

  3. Enhancement of ohmic and stochastic heating by resonance effects in capacitive radio frequency discharges: a theoretical approach.

    Science.gov (United States)

    Mussenbrock, T; Brinkmann, R P; Lieberman, M A; Lichtenberg, A J; Kawamura, E

    2008-08-22

    In low-pressure capacitive radio frequency discharges, two mechanisms of electron heating are dominant: (i) Ohmic heating due to collisions of electrons with neutrals of the background gas and (ii) stochastic heating due to momentum transfer from the oscillating boundary sheath. In this work we show by means of a nonlinear global model that the self-excitation of the plasma series resonance which arises in asymmetric capacitive discharges due to nonlinear interaction of plasma bulk and sheath significantly affects both Ohmic heating and stochastic heating. We observe that the series resonance effect increases the dissipation by factors of 2-5. We conclude that the nonlinear plasma dynamics should be taken into account in order to describe quantitatively correct electron heating in asymmetric capacitive radio frequency discharges.

  4. High temperature refrigerator

    International Nuclear Information System (INIS)

    Steyert, W.A. Jr.

    1978-01-01

    A high temperature magnetic refrigerator is described which uses a Stirling-like cycle in which rotating magnetic working material is heated in zero field and adiabatically magnetized, cooled in high field, then adiabatically demagnetized. During this cycle the working material is in heat exchange with a pumped fluid which absorbs heat from a low temperature heat source and deposits heat in a high temperature reservoir. The magnetic refrigeration cycle operates at an efficiency 70% of Carnot

  5. Temperature uniformity mapping in a high pressure high temperature reactor using a temperature sensitive indicator

    NARCIS (Netherlands)

    Grauwet, T.; Plancken, van der I.; Vervoort, L.; Matser, A.M.; Hendrickx, M.; Loey, van A.

    2011-01-01

    Recently, the first prototype ovomucoid-based pressure–temperature–time indicator (pTTI) for high pressure high temperature (HPHT) processing was described. However, for temperature uniformity mapping of high pressure (HP) vessels under HPHT sterilization conditions, this prototype needs to be

  6. Studies on divertor effects by means of the Doublet-III high-temperature plasma device

    International Nuclear Information System (INIS)

    Shimada, Michiya

    1982-12-01

    The diverter action on impurity removal, helium ash compression and radiative cooling was studied in Doublet-3, placing emphasis on the applicability to reacting plasma grade devices such as Intor. The following principal results were obtained with a single-null poloidal diverter without the diverter chamber and the diverter throat (referred to as ''open diverter''), and the diverter coils being installed outside the vacuum chamber. The diverter reduced metallic impurities in the central plasma volume, carbon influx and radiation loss, and changed a typically peaked radiation power profile to a hollow profile. In helium-seeded diverter discharge, helium gas pressure near the diverter rose with the increase of main plasma density, and the pressure was high enough to demonstrate the possibility of helium ash exhaust in a diverted tokamak. The radiation power in the diverter volume significantly increased with the increasing main plasma density to as much as 50 % of the input ohmic power. The remote radiation cooling reduced the thermal load on the diverter plate, and the electron temperature near the diverter plate was cooled down. The source of this remote radiative cooling power was the mixture of line radiation of hydrogen neutral and oxygen. (Kako, I.)

  7. Advanced processing of gallium nitride and gallium nitride-based devices: Ultra-high temperature annealing and implantation incorporation

    Science.gov (United States)

    Yu, Haijiang

    This dissertation is focused on three fields: ultra-high temperature annealing of GaN, activation of implanted GaN and the implantation incorporation into AlGaN/GaN HEMT processing, with an aim to increase the performance, manufacturability and reliability of AlGaN/GaN HEMTs. First, the ultra high temperature (around 1500°C) annealing of MOCVD grown GaN on sapphire has been studied, and a thermally induced threading dislocation (TD) motion and reaction are reported. Using a rapid thermal annealing (RTA) approach capable of heating 2 inch wafers to around 1500°C with 100 bar N2 over-pressure, evidence of dislocation motion was first observed in transmission electron microscopy (TEM) micrographs of both planar and patterned GaN films protected by an AIN capping layer. An associated decrease in x-ray rocking curve (XRC) full-width-half-maximum (FWHM) was also observed for both the symmetric and asymmetric scans. After annealing, the AIN capping layer remained intact, and optical measurements showed no degradation of the opto-electronic properties of the films. Then activation annealing of Si implants in MOCVD grown GaN has been studied for use in ohmic contacts. Si was implanted in semi-insulating GaN at 100 keV with doses from 5 x 1014 cm-2 to 1.5 x 1016 cm-2. Rapid thermal annealing at 1500°C with 100 bar N2 over-pressure was used for dopant activation, resulting in a minimum sheet resistance of 13.9 O/square for a dose of 7 x 1015 cm-2. Secondary ion mass spectroscopy measurements showed a post-activation broadening of the dopant concentration peak by 20 nm (at half the maximum), while X-Ray triple axis o-2theta scans indicated nearly complete implant damage recovery. Transfer length method measurements of the resistance of Ti/Al/Ni/Au contacts to activated GaN:Si (5 x 1015 cm-2 at 100 keV) indicated lowest contact resistances of 0.07 Omm and 0.02 Omm for as-deposited and subsequently annealed contacts, respectively. Finally, the incorporation of Si implantation

  8. Ohmic Heating System for the TFTR Tokamak

    International Nuclear Information System (INIS)

    Petree, F.; Cassel, R.

    1977-01-01

    The TFTR Ohmic Heating (OH) System will apply 140,000 volt impulses upon the OH coils to start the plasma. In order to reduce the voltage stress to ground on the OH coils to 12 kV without changing the magnetic field induced by the OH system in the plasma, six d-c current interrupters will be applied to six entry points in the OH coil system. And in order to impart a nearly rectangular shape to these impulses, the voltage determining elements will be nonlinear resistances placed in parallel with the interrupters. These nonlinear resistors, made of semiconducting material, are not normally used in repetitive or continuous duty, and their proper functioning is crucial to the reliable operation of the system. The system described herein, is being revised owing to the impact of revisions to the Toroidal Field Coil System, and to refinements to the OH System design

  9. Enhanced piezoelectric output voltage and Ohmic behavior in Cr-doped ZnO nanorods

    International Nuclear Information System (INIS)

    Sinha, Nidhi; Ray, Geeta; Godara, Sanjay; Gupta, Manoj K.; Kumar, Binay

    2014-01-01

    Highlights: • Low cost highly crystalline Cr-doped ZnO nanorods were synthesized. • Enhancement in dielectric, piezoelectric and ferroelectric properties were observed. • A high output voltage was obtained in AFM. • Cr-doping resulted in enhanced conductivity and better Ohmic behavior in ZnO/Ag contact. - Abstract: Highly crystalline Cr-doped ZnO nanorods (NRs) were synthesized by solution technique. The size distribution was analyzed by high resolution tunneling electron microscope (HRTEM) and particle size analyzer. In atomic force microscope (AFM) studies, peak to peak 8 mV output voltage was obtained on the application of constant normal force of 25 nN. It showed high dielectric constant (980) with phase transition at 69 °C. Polarization vs. electric field (P–E) loops with remnant polarization (6.18 μC/cm 2 ) and coercive field (0.96 kV/cm) were obtained. In I–V studies, Cr-doping was found to reduce the rectifying behavior in the Ag/ZnO Schottky contact which is useful for field effect transistor (FET) and solar cell applications. With these excellent properties, Cr-doped ZnO NRs can be used in nanopiezoelectronics, charge storage and ferroelectric applications

  10. Low temperature deposition of bifacial CIGS solar cells on Al-doped Zinc Oxide back contacts

    Energy Technology Data Exchange (ETDEWEB)

    Cavallari, Nicholas, E-mail: nicholas.cavallari@imem.cnr.it [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy); Pattini, Francesco; Rampino, Stefano; Annoni, Filippo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Barozzi, Mario [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Bronzoni, Matteo; Gilioli, Edmondo; Gombia, Enos [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Maragliano, Carlo [Solar Bankers LLC, Phoenix, AZ (United States); Mazzer, Massimo [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Pepponi, Giancarlo [FBK—CMM—Micro Nano Facility, Via Sommarive 18, 38123 Trento (Italy); Spaggiari, Giulia; Fornari, Roberto [IMEM-CNR, Parco Area delle Scienze 37/a, 43124 Parma (Italy); Department of Mathematical, Physical and Computer Sciences, University of Parma, Parco Area delle Scienze 7/a, 43124 Parma (Italy)

    2017-08-01

    Highlights: • AZO and CIGS were deposited by Low-Temperature Pulsed Electron Deposition (LT-PED). • CIGS/AZO contacts with ohmic behavior and resistance of 1.07 Ω cm{sup 2} were fabricated. • LT-PED deposition of AZO and CIGS prevents formation of Ga{sub 2}O{sub 3} interlayer. • CIGS-based bifacial solar cells with AZO back contact were realized. • Front PV efficiency of 9.3% and equivalent bifacial efficiency of 11.6% were achieved. - Abstract: We report on the fabrication and characterization of Cu(In,Ga)Se{sub 2} (CIGS)-based thin film bifacial solar cells using Al-doped ZnO (AZO) as cost-effective and non-toxic transparent back contact. We show that, by depositing both CIGS and AZO by Low Temperature Pulsed Electron Deposition at a maximum temperature of 250 °C, a good ohmic contact is formed between the two layers and good quality solar cells can be fabricated as a result. Photovoltaic efficiencies as high as 9.3% (front illumination), 5.1% (backside illumination) and 11.6% (bifacial illumination) have been obtained so far. These values are remarkably higher than those previously reported in the literature. We demonstrate that this improvement is ascribed to the low-temperature deposition process that avoids the formation of Ga{sub 2}O{sub 3} at the CIGS/AZO interface and favours the formation of a low-resistivity contact in agreement with device simulations.

  11. Ohmic contact formation process on low n-type gallium arsenide (GaAs) using indium gallium zinc oxide (IGZO)

    Energy Technology Data Exchange (ETDEWEB)

    Yang, Seong-Uk [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Product and Test Engineering Team, System LSI Division, Samsung Electronics Co., Ltd, Yongin 446-711 (Korea, Republic of); Jung, Woo-Shik [Department of Electrical Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, In-Yeal; Jung, Hyun-Wook; Kim, Gil-Ho [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of); Park, Jin-Hong, E-mail: jhpark9@skku.edu [Samsung-SKKU Graphene Center and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)

    2014-02-01

    Highlights: • We propose a method to fabricate non-gold Ohmic contact on low n-type GaAs with IGZO. • 0.15 A/cm{sup 2} on-current and 1.5 on/off-current ratio are achieved in the junction. • InAs and InGaAs formed by this process decrease an electron barrier height. • Traps generated by diffused O atoms also induce a trap-assisted tunneling phenomenon. - Abstract: Here, an excellent non-gold Ohmic contact on low n-type GaAs is demonstrated by using indium gallium zinc oxide and investigating through time of flight-secondary ion mass spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy, J–V measurement, and H [enthalpy], S [entropy], Cp [heat capacity] chemistry simulation. In is diffused through GaAs during annealing and reacts with As, forming InAs and InGaAs phases with lower energy bandgap. As a result, it decreases the electron barrier height, eventually increasing the reverse current. In addition, traps generated by diffused O atoms induce a trap-assisted tunneling phenomenon, increasing generation current and subsequently the reverse current. Therefore, an excellent Ohmic contact with 0.15 A/cm{sup 2} on-current density and 1.5 on/off-current ratio is achieved on n-type GaAs.

  12. The role of high work-function metallic nanodots on the performance of a-Si:H solar cells: offering ohmic contact to light trapping.

    Science.gov (United States)

    Kim, Jeehwan; Abou-Kandil, Ahmed; Fogel, Keith; Hovel, Harold; Sadana, Devendra K

    2010-12-28

    Addition of carbon into p-type "window" layers in hydrogenated amorphous silicon (a-Si:H) solar cells enhances short circuit currents and open circuit voltages by a great deal. However, a-Si:H solar cells with high carbon-doped "window" layers exhibit poor fill factors due to a Schottky barrier-like impedance at the interface between a-SiC:H windows and transparent conducting oxides (TCO), although they show maximized short circuit currents and open circuit voltages. The impedance is caused by an increasing mismatch between the work function of TCO and that of p-type a-SiC:H. Applying ultrathin high-work-function metals at the interface between the two materials results in an effective lowering of the work function mismatch and a consequent ohmic behavior. If the metal layer is sufficiently thin, then it forms nanodots rather than a continuous layer which provides light-scattering effect. We demonstrate 31% efficiency enhancement by using high-work-function materials for engineering the work function at the key interfaces to raise fill factors as well as photocurrents. The use of metallic interface layers in this work is a clear contrast to previous work where attempts were made to enhance the photocurrent using plasmonic metal nanodots on the solar cell surface.

  13. High performance Ni-Sm{sub 0.15}Ce{sub 0.85}O{sub 2-{delta}} cermet anodes for intermediate temperature solid oxide fuel cells using LaGaO{sub 3} based oxide electrolytes

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Shizhong; Takita, Yusaku [Department of Applied Chemistry, Faculty of Engineering, Oita University, Dannoharu 700, Oita 870-1192 (Japan); Ando, Masaki [Materials Production Course, Graduate School of Engineering, Oita University, Dannoharu 700, Oita 870-1192 (Japan); Ishihara, Tatsumi [Department of Applied Chemistry, Faculty of Engineering, Kyushu University, Hakozaki 6-10-1, Higashi-ku, Fukuoka 812-8581 (Japan)

    2004-10-29

    Effect of the composition and synthesizing approaches on the performance of Ni-15 mol% Sm{sup 3+} doped CeO{sub 2} (Sm{sub 0.15}Ce{sub 0.85}O{sub 2-{delta}}, SDC) composite anodes were studied. The results showed that the addition of SDC into Ni significantly improved the performance of Ni anode mainly by reducing the ohmic resistance of the cell and the overpotential at anode/electrolyte interface. The introduction of SDC into Ni created more active sites for H{sub 2} oxidation; however, it also increased the activation energy of the process at the same time. Therefore, the anodic overpotential of Ni-SDC composite electrode was higher than pure Ni at low reaction temperatures (873 K), while lower than that of pure Ni at 1073 K. Further experiments showed that the activities of Ni-SDC composite electrodes showed strong dependency on the synthesizing approaches. The electrodes prepared with impregnation methods exhibited a much higher activity compared with the electrodes prepared with solid-state reaction due to the reduced ohmic resistance. The low ohmic resistance of the cells using Ni-SDC anodes prepared with impregnation method is due to the improved distribution of Ni and SDC in the green powder of anode. An equal distribution of Ni and SDC is essential to minimize the reaction between Ni and strontium and magnesium doped lanthanum gallate (LSGM), and decrease the ohmic resistance.

  14. Heating efficiency of high-power perpendicular neutral-beam injection in PDX

    International Nuclear Information System (INIS)

    Hawryluk, R.J.; Arunasalam, V.; Bell, M.

    1982-03-01

    The heating efficiency of high power (up to 7.2 MW) near-perpendicular neutral beam injection in the PDX tokamak is comparable to that of tangential injection in PLT. Collisionless plasmas with central ion temperatures up to 6.5 keV and central electron temperatures greater than 2.5 keV have been obtained. The plasma pressure, including the contribution from the beam particles, increases with increasing beam power and does not appear to saturate, although the parametric dependence of the energy confinement time is different from that observed in ohmic discharges

  15. Structural analysis of equilibrium and ohmic heating coil assemblies for the TFTR

    International Nuclear Information System (INIS)

    Chattopadhyay, S.

    1975-10-01

    The structural adequacy of the equilibrium and ohmic heating coils and their support systems for the TFTR device has been investigated. The capability of the coils to span ribs of the support structure has been established. The support structure has been found to be effective in resisting the magnetic forces in the coils. The bands encircling the outboard coils and the band tensioning devices have been found to perform adequately. The analysis is based on October 1975 conceptual design

  16. Ohmically heated toroidal experiment (OHTE) mobile ignition test reactor facility concept study

    International Nuclear Information System (INIS)

    Masson, L.S.; Watts, K.D.; Piscitella, R.R.; Sekot, J.P.; Drexler, R.L.

    1983-02-01

    This report presents the results of a study to evaluate the use of an existing nuclear test complex at the Idaho National Engineering Laboratory (INEL) for the assembly, testing, and remote maintenance of the ohmically heated toroidal experiment (OHTE) compact reactor. The portable reactor concept is described and its application to OHTE testing and maintenance requirements is developed. Pertinent INEL facilities are described and several test system configurations that apply to these facilities are developed and evaluated

  17. Correlation between the electrical properties and the interfacial microstructures of TiAl-based ohmic contacts to p-type 4H-SiC

    Science.gov (United States)

    Tsukimoto, S.; Nitta, K.; Sakai, T.; Moriyama, M.; Murakami, Masanori

    2004-05-01

    In order to understand a mechanism of TiAl-based ohmic contact formation for p-type 4H-SiC, the electrical properties and microstructures of Ti/Al and Ni/Ti/Al contacts, which provided the specific contact resistances of approximately 2×10-5 Ω-cm2 and 7×10-5 Ω-cm2 after annealing at 1000°C and 800°C, respectively, were investigated using x-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM). Ternary Ti3SiC2 carbide layers were observed to grow on the SiC surfaces in both the Ti/Al and the Ni/Ti/Al contacts when the contacts yielded low resistance. The Ti3SiC2 carbide layers with hexagonal structures had an epitaxial orientation relationship with the 4H-SiC substrates. The (0001)-oriented terraces were observed periodically at the interfaces between the carbide layers and the SiC, and the terraces were atomically flat. We believed the Ti3SiC2 carbide layers primarily reduced the high Schottky barrier height at the contact metal/p-SiC interface down to about 0.3 eV, and, thus, low contact resistances were obtained for p-type TiAl-based ohmic contacts.

  18. Effects of plasma treatment on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-AlGaN

    International Nuclear Information System (INIS)

    Cao, X. A.; Piao, H.; LeBoeuf, S. F.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2006-01-01

    The effects of surface treatment using Cl 2 /BCl 3 and Ar inductive coupled plasmas on the Ohmic characteristics of Ti/Al/Ti/Au contacts to n-type Al x Ga 1-x N (x=0-0.5) were investigated. Plasma treatment significantly increased the surface conductivity of GaN and Al 0.1 Ga 0.9 N, leading to improved Ohmic behaviors of the contacts. However, it reduced the surface doping level in Al x Ga 1-x N (x≥0.3) and degraded the contact properties. Following a 900-1000 deg. C anneal, the Ti/Al/Ti/Au contacts to Al x Ga 1-x N (x=0-0.3) became truly Ohmic, with specific contact resistances of (3-7)x10 -5 Ω cm 2 , whereas the contact to Al 0.5 Ga 0.5 N remained rectifying even without the plasma treatment. X-ray photoelectron spectroscopy measurements confirmed that the Fermi level moved toward the conduction band in GaN after the plasma treatment, but it was pinned by plasma-induced deep-level states in Al 0.5 Ga 0.5 N. This study emphasizes the need to mitigate plasma damage introduced during the mesa etch step for AlGaN-based deep-UV emitters and detectors

  19. Ni-SDC cermet anode for medium-temperature solid oxide fuel cell with lanthanum gallate electrolyte

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xinge; Ohara, Satoshi; Maric, R.; Mukai, Kazuo; Fukui, Takehisa [Japan Fine Ceramics Center, Nagoya (Japan); Yoshida, Hiroyuki; Nishimura, Masayoshi; Inagaki, Toru [Kansai Electr. Power Co. Inc., Hyogo (Japan); Miura, Kazuhiro [Kanden Kakou, Amagasaki (Japan)

    1999-10-01

    The polarization properties and microstructure of Ni-SDC (samaria-doped ceria) cermet anodes prepared from spray pyrolysis (SP) composite powder, and element interface diffusion between the anode and a La{sub 0.9}Sr{sub 0.1}Ga{sub 0.8}Mg{sub 0.2}O{sub 3-{delta}} (LSGM) electrolyte are investigated as a function of anode sintering temperature. The anode sintered at 1250 C displays minimum anode polarization (with anode ohmic loss), while the anode prepared at 1300 C has the best electrochemical overpotential, viz., 27 mV at 300 mA cm{sup -2} operating at 800 C. The anode ohmic loss gradually increases with increase in the sintering temperature at levels below 1300 C, and sharply increases at 1350 C. Electron micrographs show a clear grain growth at sintering temperatures higher than 1300 C. The anode microstructure appears to be optimized at 1300 C, in which nickel particles form a network with well-connected SDC particles finely distributed over the surfaces of the nickel particles. The anode sintered at 1350 C has severe grain growth and an apparent interface diffusion of nickel from the anode to the electrolyte. The nickel interface diffusion is assumed to be the main reason for the increment in ohmic loss, and the resulting loss in anode performance. The findings suggest that sintering Ni-SDC composite powder near 1250 C is the best method to prepare the anode on a LSGM electrolyte. (orig.)

  20. Ni-SDC cermet anode for medium-temperature solid oxide fuel cell with lanthanum gallate electrolyte

    Science.gov (United States)

    Zhang, Xinge; Ohara, Satoshi; Maric, Radenka; Mukai, Kazuo; Fukui, Takehisa; Yoshida, Hiroyuki; Nishimura, Masayoshi; Inagaki, Toru; Miura, Kazuhiro

    The polarization properties and microstructure of Ni-SDC (samaria-doped ceria) cermet anodes prepared from spray pyrolysis (SP) composite powder, and element interface diffusion between the anode and a La 0.9Sr 0.1Ga 0.8Mg 0.2O 3- δ (LSGM) electrolyte are investigated as a function of anode sintering temperature. The anode sintered at 1250°C displays minimum anode polarization (with anode ohmic loss), while the anode prepared at 1300°C has the best electrochemical overpotential, viz., 27 mV at 300 mA cm -2 operating at 800°C. The anode ohmic loss gradually increases with increase in the sintering temperature at levels below 1300°C, and sharply increases at 1350°C. Electron micrographs show a clear grain growth at sintering temperatures higher than 1300°C. The anode microstructure appears to be optimized at 1300°C, in which nickel particles form a network with well-connected SDC particles finely distributed over the surfaces of the nickel particles. The anode sintered at 1350°C has severe grain growth and an apparent interface diffusion of nickel from the anode to the electrolyte. The nickel interface diffusion is assumed to be the main reason for the increment in ohmic loss, and the resulting loss in anode performance. The findings suggest that sintering Ni-SDC composite powder near 1250°C is the best method to prepare the anode on a LSGM electrolyte.

  1. Heavy doping effects in high efficiency silicon solar cells

    Science.gov (United States)

    Lindholm, F. A.; Neugroschel, A.

    1986-01-01

    The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

  2. Radiation, impurity effects, instability characteristics and transport in Ohmically heated plasmas in the PLT tokamak

    International Nuclear Information System (INIS)

    Bol, K.; Arunasalam, V.; Bitter, M.

    1979-01-01

    Titanium-gettered deuterium plasmas, with graphite or steel limiters to define the plasma minor radius, have Zsub(eff) approximately 1 for 3x10 13 14 cm -3 . In ungettered discharges the density limit set by disruptions is about half the value in gettered discharges. The bolometrically measured energy flux from the whole plasma volume is 80-100% of the Ohmic input power for ungettered discharges and 50-70% for gettered ones. The strucutre of MHD modes continues to be intensively studied by means of soft X-ray detector arrays; however, the connection with the disruptive instability remains unclear. Microinstabilities, studied by means of a 2-mm homodyne scattering system, appear to be of sufficient magnitude to influence energy and particle transport. Ion energy confinement times in the central region of the plasma have been estimated to be 50-100ms. Gross electron energy confinement time increases linearly with density at constant temperature. The longest electron energy confinement times observed are approximately >40ms in dense gettered discharges, giving total energy confinement times approximately 80ms. (author)

  3. The effect of correlations on the non-ohmic behavior of the small-polaron hopping conductivity in 1D and 3D disordered systems

    International Nuclear Information System (INIS)

    Dimakogianni, M; Triberis, G P

    2010-01-01

    According to percolation theory the investigation of charge transport in disordered systems is equivalent to the study of the possibility of the passage of the carriers through a random network of impedances which interconnect the different lattice sites. When the site energies are not the same, the energy of a site affects the incoming as well as the outgoing impedances connected to the given site and this gives rise to correlations between neighboring impedances. This new condition characterizes the transport process and imposes the evaluation of the average number of sites accessible by a bond from a given site for all possible configurations of sites that satisfy the percolation condition. The generalized molecular crystal model, appropriate for the study of small-polaron hopping transport in disordered systems, and the Kubo formula permit the evaluation of these impedances. Taking correlations into account, theoretical percolation considerations applicable to one-dimensional and three-dimensional disordered systems, lead to analytical expressions for the temperature and electric field dependence of the DC conductivity at high (multi-phonon-assisted hopping) and low (few-phonon-assisted hopping) temperatures. The theoretical analysis reveals the effect of correlations on the non-ohmic behavior of the small-polaron hopping conductivity and permits the evaluation of the maximum hopping distance. Quantitative estimates of this effect are presented comparing the theoretical results, including correlations with those ignoring them, previously reported, applying them to recent experimental data for a wide temperature range and from low up to moderate electric fields.

  4. Design of TFTR movable limiter blades for ohmic and neutral-beam-heated plasmas

    International Nuclear Information System (INIS)

    Doll, D.W.; Ulrickson, M.A.; Cecchi, J.L.; Citrolo, J.C.; Weissenburger, D.; Bialek, J.

    1981-10-01

    A new set of movable limiter blades has been designed for TFTR that will meet both the requirements of the 4 MW ohmic heated and the 33 MW neutral beam heated plasmas. This is accomplished with three limiter blades each having and elliptical shape along the toroidal direction. Heat flux levels are acceptable for both ohmic heated and pre-strong compression plasmas. The construction consists of graphite tiles attached to cooled backing plates. The tiles have an average thickness of approx. 4.7 cm and are drawn against the backing plate with spring loaded fasteners that are keyed into the graphite. The cooled backing plate provides the structure for resisting disruption and fault induced loads. A set of rollers attached to the top and bottom blades allow them to be expanded and closed in order to vary the plasma surface for scaling experiments. Water cooling lines penetrate only the mid-plane port cover/support plate in such a way as to avoid bolted water connections inside the vacuum boundary and at the same time allow blade movement. Both the upper and lower blades are attached to the mid-plane limiter blade through pivots. Pivot connections are protected against arcing with an alumina coating and a shunt bar strap. Remote handling is considered throughout the design

  5. Advances in high temperature chemistry

    CERN Document Server

    Eyring, Leroy

    1969-01-01

    Advances in High Temperature Chemistry, Volume 2 covers the advances in the knowledge of the high temperature behavior of materials and the complex and unfamiliar characteristics of matter at high temperature. The book discusses the dissociation energies and free energy functions of gaseous monoxides; the matrix-isolation technique applied to high temperature molecules; and the main features, the techniques for the production, detection, and diagnosis, and the applications of molecular beams in high temperatures. The text also describes the chemical research in streaming thermal plasmas, as w

  6. Radiation losses and global energy balance for Ohmically heated discharges in ASDEX

    International Nuclear Information System (INIS)

    Mueller, E.R.; Behringer, K.; Niedermeyer, H.

    1982-01-01

    Global energy balance, radiation profiles and dominant impurity radiation sources are compared for Ohmically heated limiter and divertor discharges in the ASDEX tokamak. In discharges with a poloidal stainless-steel limiter, total radiation from the plasma is the dominant energy loss channel. The axisymmetric divertor reduces this volume-integrated radiation to 30-35% of the heating power and additional Ti-gettering halves it again to 10-15%. Local radiation losses in the plasma centre, which are mainly due to the presence of iron impurity ions, are reduced by about one order of magnitude. In high-current (Isub(p) = 400 kA) and high-density (nsub(e)-bar = 6 x 10 13 cm -3 ) ungettered divertor discharges, up to 55% of the heating power is dumped into a cold-gas target inside the divertor chambers. The bolometrically detected volume power losses in the chambers can mainly be attributed to neutral hydrogen atoms with kinetic energies of a few eV. In this parameter range, the divertor plasma is dominated by inelastic molecular and atomic processes, the main process being Franck-Condon dissociation of H 2 molecules. (author)

  7. Information of Zeff from the sawtooth-performances in the center of ohmic tokamak discharges

    International Nuclear Information System (INIS)

    Eberhagen, A.

    1987-09-01

    Achievement of information on the mean effective ion charge in the center of ohmic tokamak discharges from sawtooth-relaxations of the plasma is considered. This method is found to supply trustworthy results for usual tokamak parameters. While its application requires some effort in data analysis, it can provide a valuable determination of Z eff -data, independent of the information from bremsstrahlung radiation losses of the plasma. (orig.)

  8. High-temperature superconductivity

    International Nuclear Information System (INIS)

    Lynn, J.W.

    1990-01-01

    This book discusses development in oxide materials with high superconducting transition temperature. Systems with Tc well above liquid nitrogen temperature are already a reality and higher Tc's are anticipated. The author discusses how the idea of a room-temperature superconductor appears to be a distinctly possible outcome of materials research

  9. Evolution of the Turbulence Radial Wavenumber Spectrum near the L-H Transition in NSTX Ohmic Discharges

    Energy Technology Data Exchange (ETDEWEB)

    Kubota, S.; Peebles, W.A., E-mail: skubota@ucla.edu [UCLA, Los Angeles (United States); Bush, C. E.; Maingi, R. [Oak Ridge National Laboratory, Oak Ridge (United States); Zweben, S. J.; Bell, R.; Crocker, N.; Diallo, A.; Kaye, S.; LeBlanc, B. P.; Park, J. K.; Ren, Y. [Princeton Plasma Physics Laboratory, Princeton University, Princeton (United States); Maqueda, R. J. [Nova Photonics, Princeton (United States); Raman, R. [University of Washington, Seattle (United States)

    2012-09-15

    Full text: The measurement of radially extended meso-scale structures such as zonal flows and streamers, as well as the underlying microinstabilities driving them, is critical for understanding turbulence-driven transport in plasma devices. In particular, the shape and evolution of the radial wavenumber spectrum indicate details of the nonlinear spectral energy transfer, the spreading of turbulence, as well as the formation of transport barriers. In the National Spherical Torus Experiment (NSTX), the FMCW backscattering diagnostic is used to probe the turbulence radial wavenumber spectrum (k{sub r} = 0 - 22 cm-1 ) across the outboard minor radius near the L- to H-mode transition in Ohmic discharges. During the L-mode phase, a broad spectral component (k{sub r} {approx} 2 - 10 cm{sup -1} ) extends over a significant portion of the edge-core from R = 120 to 155 cm ({rho} = 0.4 - 0.95). At the L-H transition, turbulence is quenched across the measurable k{sub r} range at the ETB location, where the radial correlation length drops from {approx} 1.5 - 0.5 cm. The k{sub r} spectrum away from the ETB location is modified on a time scale of tens of microseconds, indicating that nonlocal turbulence dynamics are playing a strong role. Close to the L-H transition, oscillations in the density gradient and edge turbulence quenching become highly correlated. These oscillations are also present in Ohmic discharges without an L-H transition, but are far less frequent. Similar behavior is also seen near the L-H transition in NB-heated discharges. (author)

  10. Initial Thomson Scattering Survey of Local Helicity Injection and Ohmic Plasmas at the Pegasus Toroidal Experiment

    Science.gov (United States)

    Schlossberg, D. J.; Bodner, G. M.; Bongard, M. W.; Fonck, R. J.; Winz, G. R.

    2014-10-01

    A multipoint Thomson scattering diagnostic has recently been installed on the Pegasus ST. The system utilizes a frequency-doubled Nd:YAG laser (λ0 ~ 532 nm), spectrometers with volume phase holographic gratings, and a gated, intensified CCD camera. It provides measurements of Te and ne at 8 spatial locations for each spectrometer once per discharge. A new multiple aperture and beam dump system has been implemented to mitigate interference from stray light. This system has provided initial measurements in the core region of plasmas initiated by local helicity injection (LHI), as well as conventional Ohmic L- and H-mode discharges. Multi-shot averages of low-density (ne ~ 3 ×1018 m-3) , Ip ~ 0 . 1 MA LHI discharges show central Te ~ 75 eV at the end of the helicity injection phase. Ip ~ 0 . 13 MA Ohmic plasmas at moderate densities (ne ~ 2 ×1019 m-3) have core Te ~ 150 eV in L-mode. Generally, these plasmas do not reach transport equilibrium in the short 25 ms pulse length available. After an L-H transition, strong spectral broadening indicates increasing Te, to values above the range of the present spectrometer system with a high-dispersion VPH grating. Near-term system upgrades will focus on deploying a second spectrometer, with a lower-dispersion grating capable of measuring the 0.1-1.0 keV range. The second spectrometer system will also increase the available number of spatial channels, enabling study of H-mode pedestal structure. Work supported by US DOE Grant DE-FG02-96ER54375.

  11. Metal Contacts to Gallium Arsenide.

    Science.gov (United States)

    Ren, Fan

    1991-07-01

    While various high performance devices fabricated from the gallium arsenide (GaAs) and related materials have generated considerable interest, metallization are fundamental components to all semiconductor devices and integrated circuits. The essential roles of metallization systems are providing the desired electrical paths between the active region of the semiconductor and the external circuits through the metal interconnections and contacts. In this work, in-situ clean of native oxide, high temperature n-type, low temperature n-type and low temperature p-type ohmic metal systems have been studied. Argon ion mill was used to remove the native oxide prior to metal deposition. For high temperature process n-type GaAs ohmic contacts, Tungsten (W) and Tungsten Silicide (WSi) were used with an epitaxial grown graded Indium Gallium Arsenide (InGaAs) layer (0.2 eV) on GaAs. In addition, refractory metals, Molybdenum (Mo), was incorporated in the Gold-Germanium (AuGe) based on n-type GaAs ohmic contacts to replace conventional silver as barrier to prevent the reaction between ohmic metal and chlorine based plasma as well as the ohmic metallization intermixing which degrades the device performance. Finally, Indium/Gold-Beryllium (In/Au-Be) alloy has been developed as an ohmic contact for p-type GaAs to reduce the contact resistance. The Fermi-level pinning of GaAs has been dominated by the surface states. The Schottky barrier height of metal contacts are about 0.8 V regardless of the metal systems. By using p-n junction approach, barrier height of pulsed C-doped layers was achieved as high as 1.4 V. Arsenic implantation into GaAs method was also used to enhance the barrier height of 1.6 V.

  12. Observation of Flat Electron Temperature Profiles in the Lithium Tokamak Experiment

    International Nuclear Information System (INIS)

    Boyle, D. P.; Majeski, R.; Schmitt, J. C.; Auburn University, AL; Hansen, C.

    2017-01-01

    It has been predicted for over a decade that low-recycling plasma-facing components in fusion devices would allow high edge temperatures and flat or nearly flat temperature profiles. In recent experiments with lithium wall coatings in the Lithium Tokamak Experiment (LTX), a hot edge (> 200 eV) and flat electron temperature profiles have been measured following the termination of external fueling. In this work, reduced recycling was demonstrated by retention of ~ 60% of the injected hydrogen in the walls following the discharge. Electron energy confinement followed typical Ohmic confinement scaling during fueling, but did not decrease with density after fueling terminated, ultimately exceeding the scaling by ~ 200% . Lastly, achievement of the low-recycling, hot edge regime has been an important goal of LTX and lithium plasma-facing component research in general, as it has potentially significant implications for the operation, design, and cost of fusion devices.

  13. Double diffusive magnetohydrodynamic heat and mass transfer of nanofluids over a nonlinear stretching/shrinking sheet with viscous-Ohmic dissipation and thermal radiation

    Directory of Open Access Journals (Sweden)

    Dulal Pal

    2017-03-01

    Full Text Available The study of magnetohydrodynamic (MHD convective heat and mass transfer near a stagnation-point flow over stretching/shrinking sheet of nanofluids is presented in this paper by considering thermal radiation, Ohmic heating, viscous dissipation and heat source/sink parameter effects. Non-similarity method is adopted for the governing basic equations before they are solved numerically using Runge-Kutta-Fehlberg method using shooting technique. The numerical results are validated by comparing the present results with previously published results. The focus of this paper is to study the effects of some selected governing parameters such as Richardson number, radiation parameter, Schimdt number, Eckert number and magnetic parameter on velocity, temperature and concentration profiles as well as on skin-friction coefficient, local Nusselt number and Sherwood number.

  14. Oxygen vacancy tuned Ohmic-Schottky conversion for enhanced performance in β-Ga{sub 2}O{sub 3} solar-blind ultraviolet photodetectors

    Energy Technology Data Exchange (ETDEWEB)

    Guo, D. Y.; Wu, Z. P.; An, Y. H.; Guo, X. C.; Chu, X. L.; Sun, C. L.; Tang, W. H., E-mail: whtang@bupt.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Li, L. H. [Physics Department, The State University of New York at Potsdam, Potsdam, New York 13676-2294 (United States); Li, P. G., E-mail: pgli@zstu.edu.cn [School of Science, Beijing University of Posts and Telecommunications, Beijing 100876 (China); Center for Optoelectronics Materials and Devices, Department of Physics, Zhejiang Sci-Tech University, Hangzhou, 310018 Zhejiang (China)

    2014-07-14

    β-Ga{sub 2}O{sub 3} epitaxial thin films were deposited using laser molecular beam epitaxy technique and oxygen atmosphere in situ annealed in order to reduce the oxygen vacancy. Metal/semiconductor/metal structured photodetectors were fabricated using as-grown film and annealed film separately. Au/Ti electrodes were Ohmic contact with the as-grown films and Schottky contact with the annealed films. In compare with the Ohmic-type photodetector, the Schottky-type photodetector takes on lower dark current, higher photoresponse, and shorter switching time, which benefit from Schottky barrier controlling electron transport and the quantity of photogenerated carriers trapped by oxygen vacancy significant decreasing.

  15. Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

    Energy Technology Data Exchange (ETDEWEB)

    Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

    2006-07-01

    TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs.

  16. Magnetic Shear and Transport in ECRH Discharges of the TJ-II under Ohmic Induction

    International Nuclear Information System (INIS)

    Lopez-Bruna, D.; Castejon, F.; Romero, J. A.; Estrada, T.; Medina, F.; Ochando, M.; Lopez-Fraguas, A.; Ascasibar, E.; Herranz, J.; Sanchez, E.; Luna, E. de la; Pastor, I.

    2006-01-01

    TJ-II is ha heliac type stellarator characterised by high, but almost constant, vacuum rotational transform throughout the confining volume. In ECRH plasmas, moderate induced ohmic currents (negligible heating and modification of the magnetic field nodules) are enough to disregard the bootstrap contribution, which allows us performing a fair calculation of the evolution of the rotational transform. We use the loop voltage diagnostic to estimate the plasma electrical conductivity. Then the evolution of the rotational transform and shear is related to changes in the profiles of electron and thermal diffusivities: negative shear correlates with decreasing diffusivities in the region of steepest density gradient; transport increases toward zero shear but the achieved positive values are too small to draw conclusions. The radial sweeping of lowest order rational magnetic surfaces does not determine the observed trends in transport. (Author)43 refs

  17. Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

    Energy Technology Data Exchange (ETDEWEB)

    Singh, Satyendra Kumar, E-mail: satyndra.singh.eee09@itbhu.ac.in [Department of Electronics and Communication Engineering, Model Institute of Engineering and Technology, Jammu, 181122 (India); Department of Electronics and Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad, Uttar Pradesh, 211004 (India); Hazra, Purnima, E-mail: purnima.hazra@smvdu.ac.in [Department of Electronics and Communication Engineering, Shri Mata Vaishno Devi University, Katra, Jammu and Kashmir, 182320 (India)

    2017-04-01

    Highlights: • Synthesize ZnO nanoparticle thin film on p-Si substrate using RF sputtering method. • I–V and C–V characteristics of Si/ZnO heterojunction diode are studied. • High temperature performance is analyzed accounting barrier height inhomogeneities. • Gaussian distribution of BH inhomogeneities is considered to modify Richardson plot. • Modified R constant is 33.06 Acm{sup −2}K{sup −2}, i.e. nearer to theoretical value 32 Acm{sup −2}K{sup −2}. - Abstract: In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300–433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300–800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier

  18. MHD-activity in ohmic, diverted and limited H-mode plasmas in TCV

    International Nuclear Information System (INIS)

    Pochelon, A.; Anton, M.; Buehlmann, F.; Dutch, M.J.; Duval, B.P.; Hirt, A.; Hofmann, F.; Joye, B.; Lister, J.B.; Llobet, X.; Martin, Y.; Moret, J.M.; Nieswand, C.; Pietrzyk, A.Z.; Tonetti, G.; Weisen, H.

    1994-01-01

    During its first year of operation the TCV tokamak has produced a variety of plasma configurations with currents in the range 150 to 800 kA and elongations in the range of 1.0 to 2.05. Ohmic H-modes have been obtained in diverted discharges and discharges limited on the graphite tiles inner wall. After boronisation in May 1994 H-modes with line average densities up to 1.7x10 20 m -3 , corresponding to a Murakami parameter of 10, were obtained. (author) 5 figs., 2 refs

  19. Active neutral particle diagnostics for high temperature plasma

    International Nuclear Information System (INIS)

    Tobita, Kenji

    1993-01-01

    This paper describes experimental studies related to active neutral particle diagnostics in the JT-60 tokamak. Detection efficiencies of a micro-channel plate (MCP), which has widely used in plasma diagnostics, were determined for ions and neutrals. Multi-step processes for a neutral beam is predicted to enhance the beam stopping cross section in a plasma. In order to confirm the predictions, shine-through for a hydrogen and for a helium beam was measured in the JT-60 ohmic plasmas. The measurements for a hydrogen beam resulted in the cross sectional enhancement in the beam stopping. The same experiment using a helium beam indicated that the cross sectional enhancement for helium was much smaller than that for hydrogen at almost same plasma parameters. Ion temperature diagnostic using active beam scattering was developed in data processing technique, in consideration of the device function of a neutral particle analyzer and in estimation of the effect of beam ion component. Fundamental experiments for detecting helium ions in a plasma were performed using two-electron transfer reaction between a helium atomic beam and helium ions, and the energy distribution and the density of the helium ions were determined. These experiments demonstrated promise of the two-electron transfer reaction as an alpha ash detection in a burning plasma. A parasitic neutral efflux accompanied by active beam injection was investigated. (J.P.N.)

  20. FEM Modeling of the Relationship between the High-Temperature Hardness and High-Temperature, Quasi-Static Compression Experiment.

    Science.gov (United States)

    Zhang, Tao; Jiang, Feng; Yan, Lan; Xu, Xipeng

    2017-12-26

    The high-temperature hardness test has a wide range of applications, but lacks test standards. The purpose of this study is to develop a finite element method (FEM) model of the relationship between the high-temperature hardness and high-temperature, quasi-static compression experiment, which is a mature test technology with test standards. A high-temperature, quasi-static compression test and a high-temperature hardness test were carried out. The relationship between the high-temperature, quasi-static compression test results and the high-temperature hardness test results was built by the development of a high-temperature indentation finite element (FE) simulation. The simulated and experimental results of high-temperature hardness have been compared, verifying the accuracy of the high-temperature indentation FE simulation.The simulated results show that the high temperature hardness basically does not change with the change of load when the pile-up of material during indentation is ignored. The simulated and experimental results show that the decrease in hardness and thermal softening are consistent. The strain and stress of indentation were analyzed from the simulated contour. It was found that the strain increases with the increase of the test temperature, and the stress decreases with the increase of the test temperature.

  1. FEM Modeling of the Relationship between the High-Temperature Hardness and High-Temperature, Quasi-Static Compression Experiment

    Directory of Open Access Journals (Sweden)

    Tao Zhang

    2017-12-01

    Full Text Available The high-temperature hardness test has a wide range of applications, but lacks test standards. The purpose of this study is to develop a finite element method (FEM model of the relationship between the high-temperature hardness and high-temperature, quasi-static compression experiment, which is a mature test technology with test standards. A high-temperature, quasi-static compression test and a high-temperature hardness test were carried out. The relationship between the high-temperature, quasi-static compression test results and the high-temperature hardness test results was built by the development of a high-temperature indentation finite element (FE simulation. The simulated and experimental results of high-temperature hardness have been compared, verifying the accuracy of the high-temperature indentation FE simulation.The simulated results show that the high temperature hardness basically does not change with the change of load when the pile-up of material during indentation is ignored. The simulated and experimental results show that the decrease in hardness and thermal softening are consistent. The strain and stress of indentation were analyzed from the simulated contour. It was found that the strain increases with the increase of the test temperature, and the stress decreases with the increase of the test temperature.

  2. Supersymmetry at high temperatures

    International Nuclear Information System (INIS)

    Das, A.; Kaku, M.

    1978-01-01

    We investigate the properties of Green's functions in a spontaneously broken supersymmetric model at high temperatures. We show that, even at high temperatures, we do not get restoration of supersymmetry, at least in the one-loop approximation

  3. Summary of experimental core turbulence characteristics in ohmic and electron cyclotron resonance heated discharges in T-10 tokamak plasmas

    International Nuclear Information System (INIS)

    Vershkov, V.A.; Shelukhin, D.A.; Soldatov, S.V.; Urazbaev, A.O.; Grashin, S.A.; Eliseev, L.G.; Melnikov, A.V.

    2005-01-01

    This report summarizes the results of experimental turbulence investigations carried out at T-10 for more than 10 years. The turbulence characteristics were investigated using correlation reflectometry, multipin Langmuir probe (MLP) and heavy ion beam probe diagnostics. The reflectometry capabilities were analysed using 2D full-wave simulations and verified by direct comparison using a MLP. The ohmic and electron cyclotron resonance heated discharges show the distinct transition from the core turbulence, having complex spectral structure, to the unstructured one in the scrape-off layer. The core turbulence includes 'broad band, quasi-coherent' features, arising due to the excitation of rational surfaces with high poloidal m-numbers, with a low frequency near zero and specific oscillations at 15-30 kHz. All experimentally measured properties of low frequency and high frequency quasi-coherent oscillations are in good agreement with predictions of linear theory for the ion temperature gradient/dissipative trapped electron mode instabilities. Significant local changes in the turbulence characteristics were observed at the edge velocity shear layer and in the core near q = 1 radius after switching off the electron cyclotron resonance heating (ECRH). The local decrease in the electron heat conductivity and decrease in the turbulence level could be evidence of the formation of an electron internal transport barrier. The dynamic behaviour of the core turbulence was also investigated for the case of fast edge cooling and the beginning phase of ECRH

  4. High temperature high vacuum creep testing facilities

    International Nuclear Information System (INIS)

    Matta, M.K.

    1985-01-01

    Creep is the term used to describe time-dependent plastic flow of metals under conditions of constant load or stress at constant high temperature. Creep has an important considerations for materials operating under stresses at high temperatures for long time such as cladding materials, pressure vessels, steam turbines, boilers,...etc. These two creep machines measures the creep of materials and alloys at high temperature under high vacuum at constant stress. By the two chart recorders attached to the system one could register time and temperature versus strain during the test . This report consists of three chapters, chapter I is the introduction, chapter II is the technical description of the creep machines while chapter III discuss some experimental data on the creep behaviour. Of helium implanted stainless steel. 13 fig., 3 tab

  5. Magnetic properties of high temperature superconductors. AC susceptibility and magnetostriction studies

    Energy Technology Data Exchange (ETDEWEB)

    Heill, L K

    1995-05-01

    The author of this thesis has measured the ac magnetic response function {mu} = {mu}`+i{mu}`` in melt-powder-melt-growth YBa{sub 2}Cu{sub 3}O{sub 7} (Y123) with insulating Y{sub 2}BaCuO{sub 5} (Y211) and in single crystal YBa{sub 2}Cu{sub 3}O{sub 7} (SC) in applied dc fields up to 8 T, oriented both parallel and perpendicular to the crystalline c-axis. Both samples are cubes with sides of about 1 mm. The response of the two samples was mapped out as a function of temperature, excitation field amplitude and frequency, dc field and field orientation. It is found that for both samples the loss peak line (LPL) and hence the irreversibility line (IL) exists at higher temperatures and fields for perpendicular field orientation than for parallel. Strong frequency but weak amplitude dependence is observed for parallel orientation, vice versa for perpendicular orientation. The measured response is strongly non-linear for perpendicular orientation, and intermediate between linear (ohmic) and extremely non-linear (Bean critical state) for parallel orientation. The situation at parallel orientation is close to but above the transition into a vortex solid state, and a power law temperature dependence with exponent 1.5 is obtained for the vortex glass transition line. For perpendicular orientation the response is consistent with that expected in a vortex solid. Pinning barriers are found by means of thermal activation analysis. Anomalous loss peaks {mu}``(T) are observed for the SC sample for intermediate fields in perpendicular orientation. Large magnetostriction is found in a flat single crystal Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8} sample at low temperature and fields up to 6 T applied along the c-axis. 332 refs., 59 figs., 7 tabs.

  6. On-Board State-of-Health Estimation at a Wide Ambient Temperature Range in Lithium-Ion Batteries

    Directory of Open Access Journals (Sweden)

    Tiansi Wang

    2015-08-01

    Full Text Available A state-of-health (SOH estimation method for electric vehicles (EVs is presented with three main advantages: (1 it provides joint estimation of cell’s aging states in terms of power and energy (i.e., SOHP and SOHE—because the determination of SOHP and SOHE can be reduced to the estimation of the ohmic resistance increase and capacity loss, respectively, the ohmic resistance at nominal temperature will be taken as a health indicator, and the capacity loss is estimated based on a mechanistic model that is developed to describe the correlation between resistance increase and capacity loss; (2 it has wide applicability to various ambient temperatures—to eliminate the effects of temperature on the resistance, another mechanistic model about the resistance against temperature is presented, which can normalize the resistance at various temperatures to its standard value at the nominal temperature; and (3 it needs low computational efforts for on-board application—based on a linear equation of cell’s dynamic behaviors, the recursive least-squares (RLS algorithm is used for the resistance estimation. Based on the designed performance and validation experiments, respectively, the coefficients of the models are determined and the accuracy of the proposed method is verified. The results at different aging states and temperatures show good accuracy and reliability.

  7. Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers

    Energy Technology Data Exchange (ETDEWEB)

    Carey, Patrick H. [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Yang, Jiancheng [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Ren, Fan [Univ. of Florida, Gainesville, FL (United States). Department of Chemical Engineering; Hays, David C. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Pearton, Stephen J. [Univ. of Florida, Gainesville, FL (United States). Department of Materials Science and Engineering; Kuramata, Akito [Tamura Corporation, Sayama (Japan). Japan and Novel Crystal Technology, Inc.; Kravchenko, Ivan I. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Center for Nanophase Materials Science (CNMS)

    2017-10-03

    In this work, the use of ITO interlayers between Ga2O3 and Ti/Au metallization is shown to produce Ohmic contacts after annealing in the range of 500–600 °C. Without the ITO, similar anneals do not lead to linear current–voltage characteristics. Transmission line measurements were used to extract the specific contact resistance of the Au/Ti/ITO/Ga2O3 stacks as a function of annealing temperature. Sheet, specific contact, and transfer resistances all decreased sharply from as-deposited values with annealing. The minimum transfer resistance and specific contact resistance of 0.60 Ω mm and 6.3 × 10-5 Ω cm2 were achieved after 600 °C annealing, respectively. Lastly, the conduction band offset between ITO and Ga2O3 is 0.32 eV and is consistent with the improved electron transport across the heterointerface.

  8. Controlling interface oxygen for forming Ag ohmic contact to semi-polar (1 1 -2 2) plane p-type GaN

    Science.gov (United States)

    Park, Jae-Seong; Han, Jaecheon; Seong, Tae-Yeon

    2014-11-01

    Low-resistance Ag ohmic contacts to semi-polar (1 1 -2 2) p-GaN were developed by controlling interfacial oxide using a Zn layer. The 300 °C-annealed Zn/Ag samples showed ohmic behavior with a contact resistivity of 6.0 × 10-4 Ω cm2 better than that of Ag-only contacts (1.0 × 10-3 Ω cm2). The X-ray photoemission spectroscopy (XPS) results showed that annealing caused the indiffusion of oxygen at the contact/GaN interface, resulting in the formation of different types of interfacial oxides, viz. Ga-oxide and Ga-doped ZnO. Based on the XPS and electrical results, the possible mechanisms underlying the improved electrical properties of the Zn/Ag samples are discussed.

  9. Ultra-high temperature direct propulsion

    International Nuclear Information System (INIS)

    Araj, K.J.; Slovik, G.; Powell, J.R.; Ludewig, H.

    1987-01-01

    Potential advantages of ultra-high exhaust temperature (3000 K - 4000 K) direct propulsion nuclear rockets are explored. Modifications to the Particle Bed Reactor (PBR) to achieve these temperatures are described. Benefits of ultra-high temperature propulsion are discussed for two missions - orbit transfer (ΔV = 5546 m/s) and interplanetary exploration (ΔV = 20000 m/s). For such missions ultra-high temperatures appear to be worth the additional complexity. Thrust levels are reduced substantially for a given power level, due to the higher enthalpy caused by partial disassociation of the hydrogen propellant. Though technically challenging, it appears potentially feasible to achieve such ultra high temperatures using the PBR

  10. High temperature structural silicides

    International Nuclear Information System (INIS)

    Petrovic, J.J.

    1997-01-01

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi 2 -based materials, which are borderline ceramic-intermetallic compounds. MoSi 2 single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi 2 possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi 2 -Si 3 N 4 composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi 2 -based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing

  11. High temperature resistive phase transition in A15 high temperature superconductors

    International Nuclear Information System (INIS)

    Chu, C.W.; Huang, C.Y.; Schmidt, P.H.; Sugawara, K.

    1976-01-01

    Resistive measurements were made on A15 high temperature superconductors. Anomalies indicative of a phase transition were observed at 433 0 K in a single crystal Nb 3 Sn and at 485 0 K in an unbacked Nb 3 Ge sputtered thin film. Results are compared with the high temperature transmission electron diffraction studies of Nb 3 Ge films by Schmidt et al. A possible instability in the electron energy spectrum is discussed

  12. Combined use of a field-plate and narrow p-barriers for a wide-pitch ohmic-side readout of the BELLE double-sided SVD

    International Nuclear Information System (INIS)

    Ikeda, H.; Matsuda, T.

    1997-01-01

    We explored wide-pitch ohmic-side structures for the BELLE SVD, where we proposed a field-plate structure combined with narrow p-barriers in between the readout electrodes of 90, 113, 180, and 226 μm-pitch detectors. The effect of the p-barriers was studied with a numerical model to trace the carrier trajectories. The charge collection and sharing properties were examined in practice for prototype small-size detectors with an IR pulse shining from either the junction side or the ohmic side. The channel separation capabilities were also shown to be appropriate under nominal operation conditions. (orig.)

  13. High-entropy alloys as high-temperature thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Shafeie, Samrand [Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Department of Chemistry and Chemical Engineering, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Guo, Sheng, E-mail: sheng.guo@chalmers.se [Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Hu, Qiang [Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang 330029 (China); Fahlquist, Henrik [Bruker AXS Nordic AB, 17067 Solna (Sweden); Erhart, Paul [Department of Applied Physics, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Palmqvist, Anders, E-mail: anders.palmqvist@chalmers.se [Department of Chemistry and Chemical Engineering, Chalmers University of Technology, SE-41296 Gothenburg (Sweden)

    2015-11-14

    Thermoelectric (TE) generators that efficiently recycle a large portion of waste heat will be an important complementary energy technology in the future. While many efficient TE materials exist in the lower temperature region, few are efficient at high temperatures. Here, we present the high temperature properties of high-entropy alloys (HEAs), as a potential new class of high temperature TE materials. We show that their TE properties can be controlled significantly by changing the valence electron concentration (VEC) of the system with appropriate substitutional elements. Both the electrical and thermal transport properties in this system were found to decrease with a lower VEC number. Overall, the large microstructural complexity and lower average VEC in these types of alloys can potentially be used to lower both the total and the lattice thermal conductivity. These findings highlight the possibility to exploit HEAs as a new class of future high temperature TE materials.

  14. Backscattering analysis of AuGe-Ni ohmic contacts of n-GaAs

    International Nuclear Information System (INIS)

    Nassibian, A.G.; Kalkur, T.S.; Sutherland, G.J.; Cohen, D.

    1985-01-01

    AuGe-Ni is widely used for the fabrication of ohmic contacts to n-GaAs. The alloying behaviour of evaporated AuGe-Ni alloyed by furnace and Scanning Electron Beam, is characterised by Rutherford backscattering with 2MeV 4 He ions. Since the formation of alloyed AuGe-Ni contacts involves redistribution and diffusion of Ga, As, Ni, Ge and Au, it is difficult to separate the corresponding yields due to gold, Ga As, Ni and Ge in the spectrum. The technique used in the investigation involves assumption of depth distribution of elements and computing the resultant spectrum

  15. Charge collection efficiency recovery in heavily irradiated silicon detectors operated at cryogenic temperatures

    CERN Document Server

    Da Vià, C; Berglund, P; Borchi, E; Borer, K; Bruzzi, Mara; Buontempo, S; Casagrande, L; Chapuy, S; Cindro, V; Dimcovski, Zlatomir; D'Ambrosio, N; de Boer, Wim; Dezillie, B; Esposito, A P; Granat, V; Grigoriev, E; Heijne, Erik H M; Heising, S; Janos, S; Koivuniemi, J H; Konotov, I; Li, Z; Lourenço, C; Mikuz, M; Niinikoski, T O; Pagano, S; Palmieri, V G; Paul, S; Pirollo, S; Pretzl, Klaus P; Ropotar, I; Ruggiero, G; Salmi, J; Seppä, H; Suni, I; Smith, K; Sonderegger, P; Valtonen, M J; Zavrtanik, M

    1998-01-01

    The charge collection efficiency (CCE) of high resistivity silicon detectors, previously neutron irradiated up to 2*10/sup 15/ n/cm/sup 2/, was measured at different cryogenic temperatures and different bias voltages. In order to $9 study reverse annealing (RA) effects, a few samples were heated to 80 degrees C and kept at room temperature for several months after irradiation. For comparison other samples (NRA) where kept at -10 C after irradiation. The RA and $9 NRA samples, measured at 250 V forward and reverse bias voltage, present a common temperature threshold at 150 K. Below 120 K the CCE is constant and ranges between 55and 65 0.000000or the RA and NRA sample respectively. Similar CCE $9 was measured for a device processed with low resistivity contacts (OHMIC), opening the prospect for a consistent reduction of the cost of large area particle tracking. (7 refs).

  16. High temperature vapors science and technology

    CERN Document Server

    Hastie, John

    2012-01-01

    High Temperature Vapors: Science and Technology focuses on the relationship of the basic science of high-temperature vapors to some areas of discernible practical importance in modern science and technology. The major high-temperature problem areas selected for discussion include chemical vapor transport and deposition; the vapor phase aspects of corrosion, combustion, and energy systems; and extraterrestrial high-temperature species. This book is comprised of seven chapters and begins with an introduction to the nature of the high-temperature vapor state, the scope and literature of high-temp

  17. Evaluation of high temperature pressure sensors

    International Nuclear Information System (INIS)

    Choi, In-Mook; Woo, Sam-Yong; Kim, Yong-Kyu

    2011-01-01

    It is becoming more important to measure the pressure in high temperature environments in many industrial fields. However, there is no appropriate evaluation system and compensation method for high temperature pressure sensors since most pressure standards have been established at room temperature. In order to evaluate the high temperature pressure sensors used in harsh environments, such as high temperatures above 250 deg. C, a specialized system has been constructed and evaluated in this study. The pressure standard established at room temperature is connected to a high temperature pressure sensor through a chiller. The sensor can be evaluated in conditions of changing standard pressures at constant temperatures and of changing temperatures at constant pressures. According to the evaluation conditions, two compensation methods are proposed to eliminate deviation due to sensitivity changes and nonlinear behaviors except thermal hysteresis.

  18. On the evaluation of currents in a tokamak plasma during combined Ohmic and RF current drive

    International Nuclear Information System (INIS)

    Eckhartt, D.

    1986-09-01

    By taking into account the rf-generated enhancement of the plasma electric conductivity (as formulated by Fisch in the limit of weak dc electric fields) a relation is derived between the ratio of rf to Ohmically driven currents and other plasma parameters to be measured before and after the rf onset under the condition of constant net plasma current. (author)

  19. Role of Firing Temperature, Sheet Resistance, and Contact Area in Contact Formation on Screen-Printed Metal Contact of Silicon Solar Cell

    Science.gov (United States)

    Ahmad, Samir Mahmmod; Leong, Cheow Siu; Sopian, K.; Zaidi, Saleem H.

    2018-03-01

    Formation of an Ohmic contact requires a suitable firing temperature, appropriate doping profile, and contact dimensions within resolution limits of the screen-printing process. In this study, the role of the peak firing temperature in standard rapid thermal annealing (RTA) six-zone conveyor belt furnace (CBF) and two inexpensive alternate RTA systems [a custom-designed, three-zone, 5″-diameter quartz tube furnace (QTF) and a tabletop, 3″-diameter rapid thermal processing (RTP)] has been investigated. In addition, the role of sheet resistance and contact area in achieving low-resistance ohmic contacts has been examined. Electrical measurements of ohmic contacts between silver paste/ n +-emitter layer with varying sheet resistances and aluminum paste/ p-doped wafer were carried out in transmission line method configuration. Experimental measurements of the contact resistivity ( ρ c) exhibited the lowest values for CBF at 0.14 mΩ cm2 for Ag and 100 mΩ cm2 for Al at a peak firing temperature of 870°C. For the QTF configuration, lowest measured contact resistivities were 3.1 mΩ cm2 for Ag and 74.1 mΩ cm2 for Al at a peak firing temperature of 925°C. Finally, for the RTP configuration, lowest measured contact resistivities were 1.2 mΩ cm2 for Ag and 68.5 mΩ cm2 for Al at a peak firing temperature of 780°C. The measured contact resistivity exhibits strong linear dependence on sheet resistance. The contact resistivity for Ag decreases with contact area, while for Al the opposite behavior is observed.

  20. Hydrogen and deuterium pellet injection into ohmically and additionally ECR-heated TFR plasmas

    International Nuclear Information System (INIS)

    Drawin, H.W.

    1987-01-01

    The ablation clouds of hydrogen and deuterium pellets injected into ohmically and electron cyclotron resonance heated (ECRH) plasmas of the Fontenay-aux-Roses tokamak TFR have been photographed, their emission has been measured photoelectrically. Without ECRH the pellets penetrate deeply into the plasma, the clouds are striated. Injection during ECRH leads to ablation in the outer plasma region. The position of the ECR layer has no influence on the penetration depth which is only a few centimeters. The ablation clouds show no particular structure when ECRH is applied

  1. Study of current-voltage characteristics in PbTe(Ga) alloys at low temperatures

    International Nuclear Information System (INIS)

    Akimov, B.A.; Albul, A.V.; Bogdanov, E.V.

    1992-01-01

    Results of determining current-voltage characteristics in PbTe(Ga) monocrystals of n- and p-types of conductivity in strong electric fields E ≤ 2 x 10 3 V/Cm at 4.2-77 K are presented. It was established that at helium and nitrogen temperatures, the current-voltage characteristics of PbTe(Ga) alloys, high-ohmic state of which was realized in helium, differed qualitatively from ones, typical for unalloyed PbTe. The superlinear dependence, observed in the fields, beginning from E ≥ 1 V/cm, is explained in the framework of concepts of strong electric field effect on conductivity of impurity states

  2. High frequency ohmic loss of beryllium and its alloy with aluminium

    International Nuclear Information System (INIS)

    Prentslau, N.N.

    1999-01-01

    The surface resistance of Be of different purity and its alloy with Al (50%Be-50%Al) is investigated at temperatures ranged from 4,2 to 300 K in the 0-10 10 Hz frequency region. It is shown that within the temperature range (in the vicinity of 77 K) where beryllium is a de hyper conductor. Its surface resistance and the surface resistance of the alloy are minimum compared to that of other metals, in particular, of aluminium. The temperature dependence of the surface resistance of Be and its alloys is well described by the classical formulae of electrodynamics

  3. High temperature materials

    International Nuclear Information System (INIS)

    2003-01-01

    The aim of this workshop is to share the needs of high temperature and nuclear fuel materials for future nuclear systems, to take stock of the status of researches in this domain and to propose some cooperation works between the different research organisations. The future nuclear systems are the very high temperature (850 to 1200 deg. C) gas cooled reactors (GCR) and the molten salt reactors (MSR). These systems include not only the reactor but also the fabrication and reprocessing of the spent fuel. This document brings together the transparencies of 13 communications among the 25 given at the workshop: 1) characteristics and needs of future systems: specifications, materials and fuel needs for fast spectrum GCR and very high temperature GCR; 2) high temperature materials out of neutron flux: thermal barriers: materials, resistance, lifetimes; nickel-base metal alloys: status of knowledge, mechanical behaviour, possible applications; corrosion linked with the gas coolant: knowledge and problems to be solved; super-alloys for turbines: alloys for blades and discs; corrosion linked with MSR: knowledge and problems to be solved; 3) materials for reactor core structure: nuclear graphite and carbon; fuel assembly structure materials of the GCR with fast neutron spectrum: status of knowledge and ceramics and cermets needs; silicon carbide as fuel confinement material, study of irradiation induced defects; migration of fission products, I and Cs in SiC; 4) materials for hydrogen production: status of the knowledge and needs for the thermochemical cycle; 5) technologies: GCR components and the associated material needs: compact exchangers, pumps, turbines; MSR components: valves, exchangers, pumps. (J.S.)

  4. Optimisation of the Ti/Al/Ni/Au ohmic contact on AlGaN/GaN FET structures

    NARCIS (Netherlands)

    Jacobs, B.; Krämer, M.C.J.C.M.; Geluk, E.J.; Karouta, F.

    2002-01-01

    We present a systematic approach to reduce the resistance of ohmic contacts on AlGaN/GaN FET structures. We have optimised the Ti/Al/Ni/Au contact with respect to the metal composition and annealing conditions. Our optimised contact has a very low contact resistance of 0.2 ohm mm (7.3 x 10^-7 ohm

  5. Ohmic metallization technology for wide band-gap semiconductors

    International Nuclear Information System (INIS)

    Iliadis, A.A.; Vispute, R.D.; Venkatesan, T.; Jones, K.A.

    2002-01-01

    Ohmic contact metallizations on p-type 6H-SiC and n-type ZnO using a novel approach of focused ion beam (FIB) surface-modification and direct-write metal deposition will be reviewed, and the properties of such focused ion beam assisted non-annealed contacts will be reported. The process uses a Ga focused ion beam to modify the surface of the semiconductor with different doses, and then introduces an organometallic compound in the Ga ion beam, to effect the direct-write deposition of a metal on the modified surface. Contact resistance measurements by the transmission line method produced values in the low 10 -4 Ω cm 2 range for surface-modified and direct-write Pt and W non-annealed contacts, and mid 10 -5 Ω cm 2 range for surface-modified and pulse laser deposited TiN contacts. An optimum Ga surface-modification dosage window is determined, within which the current transport mechanism of these contacts was found to proceed mainly by tunneling through the metal-modified-semiconductor interface layer

  6. Ion temperature profiles along a hydrogen diagnostic beam in a TORE SUPRA tokamak plasma

    International Nuclear Information System (INIS)

    Romannikov, A.; Petrov, Yu.; Platts, P.; Khess, V.; Khutter, T.; Farzhon, Zh.; Moro, F.

    2002-01-01

    By means of corpuscular diagnostics one studies temperature of ions along a diagnostic hydrogen beam. Paper presents comparison of temperature of plasma (deuterium) basic ions measures by means of the active corpuscular diagnostics with temperature of C + carbon ions along a beam. One studies behavior peculiarities of T i ion temperature profiles for TORE-SUPRA different modes, such as: formation of plane and even hollow T i profiles for ohmic modes, variation of T i profiles under operation of an ergodic diverter, difference of temperature of basic ions measured by means of the active corpuscular diagnostics from C +5 temperature. Paper offers clear explanation of these peculiarities [ru

  7. Quantum electrodynamics at high temperature. 2

    International Nuclear Information System (INIS)

    Alvarez-Estrada, R.F.

    1988-01-01

    The photon sector of QED in d = 3 spatial dimensions is analyzed at high temperature thereby generalizing nontrivially a previous study for d = 1. The imaginary time formalism and an improved renormalized perturbation theory which incorporates second order Debye screening are used. General results are presented for the leading high temperature contributions to all renormalized connected photon Green's functions for fixed external momenta (much smaller than the temperature) to all orders in the improved perturbation theory. Those leading contributions are ultraviolet finite, infrared convergent and gauge invariant, and display an interesting form of dimensional reduction at high temperature. A new path integral representations is given for the high temperature partition function with an external photon source, which is shown to generate all leading high temperature Green's functions mentioned above, and, so, it displays neatly the kind of dimensional reduction which makes QED to become simpler at high temperature. This limiting partition function corresponds to an imaginary time dependent electron positron field interacting with an electromagnetic field at zero imaginary time, and it depends on the renormalized electron mass and electric charge, the second order contribution to the usual renormalization constant Z 3 and a new mass term, which is associated to the photon field with vanishing Lorentz index. The new mass term corresponds to a finite number of diagrams in the high temperature improved perturbation theory and carriers ultraviolet divergences which are compensated for by other contributions (so that the leading high temperature Green's functions referred to above are ultraviolet finite). The dominant high temperature contributions to the renormalized thermodynamic potential to all perturbative orders: i) are given in terms of the above leading high-temperature contributions to the photon Green's functions (except for a few diagrams of low order in the

  8. High-temperature materials and structural ceramics

    International Nuclear Information System (INIS)

    1990-01-01

    This report gives a survey of research work in the area of high-temperature materials and structural ceramics of the KFA (Juelich Nuclear Research Center). The following topics are treated: (1) For energy facilities: ODS materials for gas turbine blades and heat exchangers; assessment of the remaining life of main steam pipes, material characterization and material stress limits for First-Wall components; metallic and graphitic materials for high-temperature reactors. (2) For process engineering plants: composites for reformer tubes and cracking tubes; ceramic/ceramic joints and metal/ceramic and metal/metal joints; Composites and alloys for rolling bearing and sliding systems up to application temperatures of 1000deg C; high-temperature corrosion of metal and ceramic material; porous ceramic high-temperature filters and moulding coat-mix techniques; electrically conducting ceramic material (superconductors, fuel cells, solid electrolytes); high-temperature light sources (high-temperature chemistry); oil vapor engines with caramic components; ODS materials for components in diesel engines and vehicle gas turbines. (MM) [de

  9. Passive Resistor Temperature Compensation for a High-Temperature Piezoresistive Pressure Sensor.

    Science.gov (United States)

    Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Li, Wangwang; Zhang, Diya; Xiong, Jijun

    2016-07-22

    The main limitation of high-temperature piezoresistive pressure sensors is the variation of output voltage with operating temperature, which seriously reduces their measurement accuracy. This paper presents a passive resistor temperature compensation technique whose parameters are calculated using differential equations. Unlike traditional experiential arithmetic, the differential equations are independent of the parameter deviation among the piezoresistors of the microelectromechanical pressure sensor and the residual stress caused by the fabrication process or a mismatch in the thermal expansion coefficients. The differential equations are solved using calibration data from uncompensated high-temperature piezoresistive pressure sensors. Tests conducted on the calibrated equipment at various temperatures and pressures show that the passive resistor temperature compensation produces a remarkable effect. Additionally, a high-temperature signal-conditioning circuit is used to improve the output sensitivity of the sensor, which can be reduced by the temperature compensation. Compared to traditional experiential arithmetic, the proposed passive resistor temperature compensation technique exhibits less temperature drift and is expected to be highly applicable for pressure measurements in harsh environments with large temperature variations.

  10. High temperature storage loop :

    Energy Technology Data Exchange (ETDEWEB)

    Gill, David Dennis; Kolb, William J.

    2013-07-01

    A three year plan for thermal energy storage (TES) research was created at Sandia National Laboratories in the spring of 2012. This plan included a strategic goal of providing test capability for Sandia and for the nation in which to evaluate high temperature storage (>650ÀC) technology. The plan was to scope, design, and build a flow loop that would be compatible with a multitude of high temperature heat transfer/storage fluids. The High Temperature Storage Loop (HTSL) would be reconfigurable so that it was useful for not only storage testing, but also for high temperature receiver testing and high efficiency power cycle testing as well. In that way, HTSL was part of a much larger strategy for Sandia to provide a research and testing platform that would be integral for the evaluation of individual technologies funded under the SunShot program. DOEs SunShot program seeks to reduce the price of solar technologies to 6/kWhr to be cost competitive with carbon-based fuels. The HTSL project sought to provide evaluation capability for these SunShot supported technologies. This report includes the scoping, design, and budgetary costing aspects of this effort

  11. Density fluctuations in ohmic-, L-mode an H-mode discharges of ASDEX

    Energy Technology Data Exchange (ETDEWEB)

    Dodel, G; Holzhauer, E [Stuttgart Univ. (Germany). Inst. fuer Plasmaforschung; Niedermeyer, H; Endler, M; Gerhardt, J; Giannone, L.; Wagner, F; Zohm, H [Max-Planck-Institut fuer Plasmaphysik, Garching (Germany)

    1991-01-01

    The 119 [mu]m laser scattering device ASDEX was used to investigate the direction of propagation and temporal development of density fluctuations. In ohmic discharges the density fluctuations propagate predominantly in the electron-diamagnetic direction and change direction with NI co-injection. A strong drop in total scattered power together with a further increase in the frequency shift is observed after the build-up of the transport barrier. Similar observations have been reported on other tokamaks. Due to the finite spatial resolution of the scattering system the variation of the fluctuations with local parameters cannot be sufficiently resolved to confirm their nature. (author) 5 refs., 3 figs.

  12. Density fluctuations in ohmic-, L-mode an H-mode discharges of ASDEX

    International Nuclear Information System (INIS)

    Dodel, G.; Holzhauer, E.

    1991-01-01

    The 119 μm laser scattering device ASDEX was used to investigate the direction of propagation and temporal development of density fluctuations. In ohmic discharges the density fluctuations propagate predominantly in the electron-diamagnetic direction and change direction with NI co-injection. A strong drop in total scattered power together with a further increase in the frequency shift is observed after the build-up of the transport barrier. Similar observations have been reported on other tokamaks. Due to the finite spatial resolution of the scattering system the variation of the fluctuations with local parameters cannot be sufficiently resolved to confirm their nature. (author) 5 refs., 3 figs

  13. Microstructural Evolution and Mechanical Behavior of High Temperature Solders: Effects of High Temperature Aging

    Science.gov (United States)

    Hasnine, M.; Tolla, B.; Vahora, N.

    2018-04-01

    This paper explores the effects of aging on the mechanical behavior, microstructure evolution and IMC formation on different surface finishes of two high temperature solders, Sn-5 wt.% Ag and Sn-5 wt.% Sb. High temperature aging showed significant degradation of Sn-5 wt.% Ag solder hardness (34%) while aging has little effect on Sn-5 wt.% Sb solder. Sn-5 wt.% Ag experienced rapid grain growth as well as the coarsening of particles during aging. Sn-5 wt.% Sb showed a stable microstructure due to solid solution strengthening and the stable nature of SnSb precipitates. The increase of intermetallic compound (IMC) thickness during aging follows a parabolic relationship with time. Regression analysis (time exponent, n) indicated that IMC growth kinetics is controlled by a diffusion mechanism. The results have important implications in the selection of high temperature solders used in high temperature applications.

  14. Electron temperature and density profiles measurement in the TJ-1 tokamak by Thomson scattering

    International Nuclear Information System (INIS)

    Pardo, C.; Zurro, B.

    1986-01-01

    Electron temperature and density profiles of ohmically heated hydrogen plasmas in the TJ-1 tokamak have been measured by Thomson scattering. The temperature profile peaks sharply in the central region while the density profile is very flat. Temperature values between 100 and 390 eV have been measured for densities in the range of 5.10 12 to 2.6.10 13 cm -3 . Parameters characterizing TJ-1 plasma, such as confinement times Z eff , have been deduced from experimental data. Energy confinement times are compared with experimental scaling laws. (author)

  15. Dynamical determination of ohmic states of a cylindrical pinch

    International Nuclear Information System (INIS)

    Schnack, D.D.

    1980-04-01

    The dual problems of generation and sustainment of the reversed axial field are studied. It is shown that, if a cylindrical plasma is initially in an axisymmetric state with a sufficient degree of paramagnetism, field reversal can be attained by mode activity of a single helicity. The initial paramagnetism may be due to the method of pinch formation, as in fast experiments, or to a gradual altering of the pitch profile resulting from a succession of instabilities. Furthermore, if the total current is kept constant and energy loss and resistivity profiles are included in an ad hoc manner, one finds that the final steady state of the helical instability can be maintained for long times against resistive diffusion without the need for further unstable activity. These states, which possess zero order flow and possibly reversed axial field, represent steady equilibria which simultaneously satisfy force balance and Ohm's law, and are termed Ohmic states

  16. Metallization systems for stable ohmic contacts to GaAs

    International Nuclear Information System (INIS)

    Tandon, J.L.; Douglas, K.D.; Vendura, G.; Kolawa, E.; So, F.C.T.; Nicolet, M.A.

    1986-01-01

    A metallization scheme to form reproducible and stable ohmic contacts to GaAs is described. The approach is based on the configuration: GaAs/X/Y/Z; where X is a thin metal film (e.g. Pt, Ti, Pd, Ru), Y is an electrically conducting diffusion barrier layer (TiN, W or W/sub 0.7/N/sub 0.3/), and Z is a thick metal layer (e.g. Ag) typically required for bonding or soldering purposes. The value and reproducibility of the contact resistance in these metallization systems results from the uniform steady-state solid-phase reaction of the metal X with GaAs. The stability of the contacts is achieved by the diffusion barrier layer Y, which not only confines the reaction of X with GaAs, but also prevents the top metal layer Z from interfering with this reaction. Applications of such contacts in fabricating stable solar cells are also discussed

  17. Sandia_HighTemperatureComponentEvaluation_2015

    Energy Technology Data Exchange (ETDEWEB)

    Cashion, Avery T. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-03-01

    The objective of this project is to perform independent evaluation of high temperature components to determine their suitability for use in high temperature geothermal tools. Development of high temperature components has been increasing rapidly due to demand from the high temperature oil and gas exploration and aerospace industries. Many of these new components are at the late prototype or first production stage of development and could benefit from third party evaluation of functionality and lifetime at elevated temperatures. In addition to independent testing of new components, this project recognizes that there is a paucity of commercial-off-the-shelf COTS components rated for geothermal temperatures. As such, high-temperature circuit designers often must dedicate considerable time and resources to determine if a component exists that they may be able to knead performance out of to meet their requirements. This project aids tool developers by characterization of select COTS component performances beyond published temperature specifications. The process for selecting components includes public announcements of project intent (e.g., FedBizOps), direct discussions with candidate manufacturers,and coordination with other DOE funded programs.

  18. High Temperature, High Power Piezoelectric Composite Transducers

    Science.gov (United States)

    Lee, Hyeong Jae; Zhang, Shujun; Bar-Cohen, Yoseph; Sherrit, StewarT.

    2014-01-01

    Piezoelectric composites are a class of functional materials consisting of piezoelectric active materials and non-piezoelectric passive polymers, mechanically attached together to form different connectivities. These composites have several advantages compared to conventional piezoelectric ceramics and polymers, including improved electromechanical properties, mechanical flexibility and the ability to tailor properties by using several different connectivity patterns. These advantages have led to the improvement of overall transducer performance, such as transducer sensitivity and bandwidth, resulting in rapid implementation of piezoelectric composites in medical imaging ultrasounds and other acoustic transducers. Recently, new piezoelectric composite transducers have been developed with optimized composite components that have improved thermal stability and mechanical quality factors, making them promising candidates for high temperature, high power transducer applications, such as therapeutic ultrasound, high power ultrasonic wirebonding, high temperature non-destructive testing, and downhole energy harvesting. This paper will present recent developments of piezoelectric composite technology for high temperature and high power applications. The concerns and limitations of using piezoelectric composites will also be discussed, and the expected future research directions will be outlined. PMID:25111242

  19. High-temperature superconductivity

    International Nuclear Information System (INIS)

    Ginzburg, V.L.

    1987-07-01

    After a short account of the history of experimental studies on superconductivity, the microscopic theory of superconductivity, the calculation of the control temperature and its possible maximum value are presented. An explanation of the mechanism of superconductivity in recently discovered superconducting metal oxide ceramics and the perspectives for the realization of new high-temperature superconducting materials are discussed. 56 refs, 2 figs, 3 tabs

  20. Application of low frequency pulsed ohmic heating for inactivation of foodborne pathogens and MS-2 phage in buffered peptone water and tomato juice.

    Science.gov (United States)

    Kim, Sang-Soon; Choi, Won; Kang, Dong-Hyun

    2017-05-01

    The purpose of this study was to inactivate foodborne pathogens effectively by ohmic heating in buffered peptone water and tomato juice without causing electrode corrosion and quality degradation. Escherichia coli O157:H7, Salmonella Typhimurium, and Listeria monocytogenes were used as representative foodborne pathogens and MS-2 phage was used as a norovirus surrogate. Buffered peptone water and tomato juice inoculated with pathogens were treated with pulsed ohmic heating at different frequencies (0.06-1 kHz). Propidium iodide uptake values of bacterial pathogens were significantly (p heating is applicable to inactivate foodborne pathogens effectively without causing electrode corrosion and quality degradation in tomato juice. Copyright © 2016. Published by Elsevier Ltd.

  1. Low-temperature VRH conduction through complex materials in the presence of a temperature-dependent voltage threshold: A semi-classical percolative approach

    International Nuclear Information System (INIS)

    Sen, A.K.; Bhattacharya, S.

    2006-12-01

    In this paper, we study the variation of low temperature (T) dc conductance, G(T), of a semi-classical percolative Random Resistor cum Tunneling-bond Network (RRTN), in the presence of a linearly temperature-dependent microscopic voltage threshold, υ g (T). This model (proposed by our group in the early 90's) considers a phenomenological semi-classical tunneling (or, hopping through a barrier) process. Just as in our previous constant-υ g case, we find in the present study also that the variable range hopping (VRH) exponent γ varies continuously with the ohmic concentration p in a non-monotonic fashion. In addition, we observe a new shoulder-like behaviour of G(T) in the intermediate temperature range, below the conductance maximum. (author)

  2. Establishing an upper bound on contact resistivity of ohmic contacts to n-GaN nanowires

    International Nuclear Information System (INIS)

    Blanchard, Paul; Bertness, Kris A; Harvey, Todd; Sanford, Norman

    2014-01-01

    Contact resistivity ρ c is an important figure of merit in evaluating and improving the performance of electronic and optoelectronic devices. Due to the small size, unique morphology, and uncertain transport properties of semiconductor nanowires (NWs), measuring ρ c of contacts to NWs can be particularly challenging. In this work, Si-doped n-GaN NWs were grown by molecular beam epitaxy. Four-contact structures with 20 nm Ti/200 nm Al contacts were fabricated on individual NWs by photolithography, and the contacts were annealed to achieve ohmic behavior. Two-point resistances R 23  and four-point collinear resistances R 23collinear  were measured between the middle two contacts on each NW. These resistances were then modeled by taking into account the non-uniform distribution of current flow along the length of each contact. Contrary to the assumption that the resistance difference R 23 −R 23collinear  is equal to the total contact resistance R c , the distributed-current-flow contact model shows that R 23 −R 23collinear  ≪ R c when ρ c is sufficiently small. Indeed, the measured R 23 −R 23collinear  was so small in these devices that it was within the measurement uncertainty, meaning that it was not possible to directly calculate ρ c from these data. However, it was possible to calculate an upper bound on ρ c for each device based on the largest possible value of R 23 −R 23collinear . In addition, we took into account the large uncertainties in the NW transport properties by numerically maximizing ρ c with respect to the uncertainty range of each measured and assumed parameter in the contact model. The resulting upper limits on ρ c ranged from 4.2 × 10 −6  to 7.6 × 10 −6  Ω cm 2 , indicating that 20 nm Ti/200 nm Al is a good choice of ohmic contact for moderately-doped n-GaN NWs. The measurement and numerical analysis demonstrated here offer a general approach to modeling ohmic contact resistivity via NW four

  3. A 1.5 MJ cryostatic stable superconducting ohmic-heating coil

    International Nuclear Information System (INIS)

    Wang, S.-T.; Kim, S.H.; Praeg, W.F.; Krieger, C.I.

    1978-01-01

    As early as FY 1975, ANL had recognized the clear advantage of a superconducting ohmic-heating (OH) coil and proposed a five-year pulsed coil and power supply development program to ERDA. With modest funding made available by ERDA in FY 1977 and the use of substantial equipment inventory at ANL, a small but agressive development program was advanced to the construction of a 1.5 MJ model coil. The principle objective in building the 1.5 MJ ac coil is to demonstrate ac cryostability of a large coil with a dB/dt ranging from 2 T/s up to 14 T/s. The results of basic cable development and tests will be described. The design and construction of a prototype 1.5 MJ cryostable pulsed coil and its nonmetallic cryostat will be presented. (author)

  4. New fast switches for the Tore Supra ohmic heating circuit

    International Nuclear Information System (INIS)

    Zunino, K.; Bruneth, J.; Cara, P.; Louart, A.; Santagiustina, A.; Emelyanova, I.; Filippov, F.; Mikailov, N.

    2003-01-01

    The Tore-Supra ohmic heating circuit is equipped with four fast make switches and one fast opening switch. After many years of operation, it became necessary to substitute this equipment by modern components with similar ratings. An extensive research has been undertaken to find fast switches able to withstand more than 2500 operations per year without maintenance, at a make current of 54 kA, a voltage of 12 kV and with a closing time of less than 15 ms. At the end of the investigation, it was decided to replace the old components by fast mechanical switches proposed by the Efremov Institute and based on a prototype developed for ITER. This paper presents the technical requirements and the characteristics of the switches and describes the operational experience gained with these components during operating campaigns of 2002 and 2003. (authors)

  5. High-temperature peridotites - lithospheric or asthenospheric?

    International Nuclear Information System (INIS)

    Hops, J.J.; Gurney, J.J.

    1990-01-01

    High-temperature peridotites by definition yield equilibration temperatures greater than 1100 degrees C. On the basis of temperature and pressure calculations, these high-temperature peridotites are amongst the deepest samples entrained by kimberlites on route to the surface. Conflicting models proposing either a lithospheric or asthenospheric origin for the high-temperature peridotites have been suggested. A detailed study of these xenoliths from a single locality, the Jagersfontein kimberlite in the Orange Free State, has been completed as a means of resolving this controversy. 10 refs., 2 figs

  6. Modeling of the L.F. turbulent spectrum during ohmic discharges, auxiliary heating and disruptions in Tokamak

    International Nuclear Information System (INIS)

    Truc, A.

    1983-07-01

    The spectrum of low frequency turbulence in the TFR tokamak, as observed along a central chord by a CO 2 laser light diffusion diagnostic, appears to be representable by four monomial branches joining to three vertices. This schematic representation permits to follow more easily the evolution of the turbulence during the life of the plasma, including the ohmic regime, the transitions to auxiliary heating and the minor and major disruptions

  7. High temperature corrosion of metals

    International Nuclear Information System (INIS)

    Quadakkers, W.J.; Schuster, H.; Ennis, P.J.

    1988-08-01

    This paper covers three main topics: 1. high temperature oxidation of metals and alloys, 2. corrosion in sulfur containing environments and 3. structural changes caused by corrosion. The following 21 subjects are discussed: Influence of implanted yttrium and lanthanum on the oxidation behaviour of beta-NiA1; influence of reactive elements on the adherence and protective properties of alumina scales; problems related to the application of very fine markers in studying the mechanism of thin scale formation; oxidation behaviour of chromia forming Co-Cr-Al alloys with or without reactive element additions; growth and properties of chromia-scales on high-temperature alloys; quantification of the depletion zone in high temperature alloys after oxidation in process gas; effects of HC1 and of N2 in the oxidation of Fe-20Cr; investigation under nuclear safety aspects of Zircaloy-4 oxidation kinetics at high temperatures in air; on the sulfide corrosion of metallic materials; high temperature sulfide corrosion of Mn, Nb and Nb-Si alloys; corrosion behaviour or NiCrAl-based alloys in air and air-SO2 gas mixtures; sulfidation of cobalt at high temperatures; preoxidation for sulfidation protection; fireside corrosion and application of additives in electric utility boilers; transport properties of scales with complex defect structures; observations of whiskers and pyramids during high temperature corrosion of iron in SO2; corrosion and creep of alloy 800H under simulated coal gasification conditions; microstructural changes of HK 40 cast alloy caused by exploitation in tubes in steam reformer installation; microstructural changes during exposure in corrosive environments and their effect on mechanical properties; coatings against carburization; mathematical modeling of carbon diffusion and carbide precipitation in Ni-Cr-based alloys. (MM)

  8. High-temperature granulites and supercontinents

    Directory of Open Access Journals (Sweden)

    J.L.R. Touret

    2016-01-01

    Full Text Available The formation of continents involves a combination of magmatic and metamorphic processes. These processes become indistinguishable at the crust-mantle interface, where the pressure-temperature (P-T conditions of (ultra high-temperature granulites and magmatic rocks are similar. Continents grow laterally, by magmatic activity above oceanic subduction zones (high-pressure metamorphic setting, and vertically by accumulation of mantle-derived magmas at the base of the crust (high-temperature metamorphic setting. Both events are separated from each other in time; the vertical accretion postdating lateral growth by several tens of millions of years. Fluid inclusion data indicate that during the high-temperature metamorphic episode the granulite lower crust is invaded by large amounts of low H2O-activity fluids including high-density CO2 and concentrated saline solutions (brines. These fluids are expelled from the lower crust to higher crustal levels at the end of the high-grade metamorphic event. The final amalgamation of supercontinents corresponds to episodes of ultra-high temperature metamorphism involving large-scale accumulation of these low-water activity fluids in the lower crust. This accumulation causes tectonic instability, which together with the heat input from the sub-continental lithospheric mantle, leads to the disruption of supercontinents. Thus, the fragmentation of a supercontinent is already programmed at the time of its amalgamation.

  9. Advanced High Temperature Structural Seals

    Science.gov (United States)

    Newquist, Charles W.; Verzemnieks, Juris; Keller, Peter C.; Rorabaugh, Michael; Shorey, Mark

    2002-10-01

    This program addresses the development of high temperature structural seals for control surfaces for a new generation of small reusable launch vehicles. Successful development will contribute significantly to the mission goal of reducing launch cost for small, 200 to 300 pound payloads. Development of high temperature seals is mission enabling. For instance, ineffective control surface seals can result in high temperature (3100 F) flows in the elevon area exceeding structural material limits. Longer sealing life will allow use for many missions before replacement, contributing to the reduction of hardware, operation and launch costs.

  10. High temperature materials; Materiaux a hautes temperatures

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2003-07-01

    The aim of this workshop is to share the needs of high temperature and nuclear fuel materials for future nuclear systems, to take stock of the status of researches in this domain and to propose some cooperation works between the different research organisations. The future nuclear systems are the very high temperature (850 to 1200 deg. C) gas cooled reactors (GCR) and the molten salt reactors (MSR). These systems include not only the reactor but also the fabrication and reprocessing of the spent fuel. This document brings together the transparencies of 13 communications among the 25 given at the workshop: 1) characteristics and needs of future systems: specifications, materials and fuel needs for fast spectrum GCR and very high temperature GCR; 2) high temperature materials out of neutron flux: thermal barriers: materials, resistance, lifetimes; nickel-base metal alloys: status of knowledge, mechanical behaviour, possible applications; corrosion linked with the gas coolant: knowledge and problems to be solved; super-alloys for turbines: alloys for blades and discs; corrosion linked with MSR: knowledge and problems to be solved; 3) materials for reactor core structure: nuclear graphite and carbon; fuel assembly structure materials of the GCR with fast neutron spectrum: status of knowledge and ceramics and cermets needs; silicon carbide as fuel confinement material, study of irradiation induced defects; migration of fission products, I and Cs in SiC; 4) materials for hydrogen production: status of the knowledge and needs for the thermochemical cycle; 5) technologies: GCR components and the associated material needs: compact exchangers, pumps, turbines; MSR components: valves, exchangers, pumps. (J.S.)

  11. Scale hierarchy in high-temperature QCD

    CERN Document Server

    Akerlund, Oscar

    2013-01-01

    Because of asymptotic freedom, QCD becomes weakly interacting at high temperature: this is the reason for the transition to a deconfined phase in Yang-Mills theory at temperature $T_c$. At high temperature $T \\gg T_c$, the smallness of the running coupling $g$ induces a hierachy betwen the "hard", "soft" and "ultrasoft" energy scales $T$, $g T$ and $g^2 T$. This hierarchy allows for a very successful effective treatment where the "hard" and the "soft" modes are successively integrated out. However, it is not clear how high a temperature is necessary to achieve such a scale hierarchy. By numerical simulations, we show that the required temperatures are extremely high. Thus, the quantitative success of the effective theory down to temperatures of a few $T_c$ appears surprising a posteriori.

  12. Advances in high temperature chemistry 1

    CERN Document Server

    Eyring, Leroy

    2013-01-01

    Advances in High Temperature Chemistry, Volume 1 describes the complexities and special and changing characteristics of high temperature chemistry. After providing a brief definition of high temperature chemistry, this nine-chapter book goes on describing the experiments and calculations of diatomic transition metal molecules, as well as the advances in applied wave mechanics that may contribute to an understanding of the bonding, structure, and spectra of the molecules of high temperature interest. The next chapter provides a summary of gaseous ternary compounds of the alkali metals used in

  13. Deep Trek High Temperature Electronics Project

    Energy Technology Data Exchange (ETDEWEB)

    Bruce Ohme

    2007-07-31

    This report summarizes technical progress achieved during the cooperative research agreement between Honeywell and U.S. Department of Energy to develop high-temperature electronics. Objects of this development included Silicon-on-Insulator (SOI) wafer process development for high temperature, supporting design tools and libraries, and high temperature integrated circuit component development including FPGA, EEPROM, high-resolution A-to-D converter, and a precision amplifier.

  14. High beta plasma operation in a toroidal plasma producing device

    International Nuclear Information System (INIS)

    Clarke, J.F.

    1978-01-01

    A high beta plasma is produced in a plasma producing device of toroidal configuration by ohmic heating and auxiliary heating. The plasma pressure is continuously monitored and used in a control system to program the current in the poloidal field windings. Throughout the heating process, magnetic flux is conserved inside the plasma and the distortion of the flux surfaces drives a current in the plasma. As a consequence, the total current increases and the poloidal field windings are driven with an equal and opposing increasing current. The spatial distribution of the current in the poloidal field windings is determined by the plasma pressure. Plasma equilibrium is maintained thereby, and high temperature, high beta operation results

  15. Preliminary Guideline for the High Temperature Structure Integrity Assessment Procedure Part II. High Temperature Structural Integrity Assessment

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Jae Han; Kim, J. B.; Lee, H. Y.; Park, C. G.; Joo, Y. S.; Koo, G. H.; Kim, S. H

    2007-02-15

    A high temperature structural integrity assessment belongs to the Part II of a whole preliminary guideline for the high temperature structure. The main contents of this guideline are the evaluation procedures of the creep-fatigue crack initiation and growth in high temperature condition, the high temperature LBB evaluation procedure, and the inelastic evaluations of the welded joints in SFR structures. The methodologies for the proper inelastic analysis of an SFR structures in high temperatures are explained and the guidelines of inelastic analysis options using ANSYS and ABAQUS are suggested. In addition, user guidelines for the developed NONSTA code are included. This guidelines need to be continuously revised to improve the applicability to the design and analysis of the SFR structures.

  16. High temperature thermometric phosphors

    Science.gov (United States)

    Allison, Stephen W.; Cates, Michael R.; Boatner, Lynn A.; Gillies, George T.

    1999-03-23

    A high temperature phosphor consists essentially of a material having the general formula LuPO.sub.4 :Dy.sub.(x),Eu.sub.y) wherein: 0.1 wt %.ltoreq.x.ltoreq.20 wt % and 0.1 wt %.ltoreq.y.ltoreq.20 wt %. The high temperature phosphor is in contact with an article whose temperature is to be determined. The article having the phosphor in contact with it is placed in the environment for which the temperature of the article is to be determined. The phosphor is excited by a laser causing the phosphor to fluoresce. The emission from the phosphor is optically focused into a beam-splitting mirror which separates the emission into two separate emissions, the emission caused by the dysprosium dopant and the emission caused by the europium dopent. The separated emissions are optically filtered and the intensities of the emission are detected and measured. The ratio of the intensity of each emission is determined and the temperature of the article is calculated from the ratio of the intensities of the separate emissions.

  17. High temperature pipeline design

    Energy Technology Data Exchange (ETDEWEB)

    Greenslade, J.G. [Colt Engineering, Calgary, AB (Canada). Pipelines Dept.; Nixon, J.F. [Nixon Geotech Ltd., Calgary, AB (Canada); Dyck, D.W. [Stress Tech Engineering Inc., Calgary, AB (Canada)

    2004-07-01

    It is impractical to transport bitumen and heavy oil by pipelines at ambient temperature unless diluents are added to reduce the viscosity. A diluted bitumen pipeline is commonly referred to as a dilbit pipeline. The diluent routinely used is natural gas condensate. Since natural gas condensate is limited in supply, it must be recovered and reused at high cost. This paper presented an alternative to the use of diluent to reduce the viscosity of heavy oil or bitumen. The following two basic design issues for a hot bitumen (hotbit) pipeline were presented: (1) modelling the restart problem, and, (2) establishing the maximum practical operating temperature. The transient behaviour during restart of a high temperature pipeline carrying viscous fluids was modelled using the concept of flow capacity. Although the design conditions were hypothetical, they could be encountered in the Athabasca oilsands. It was shown that environmental disturbances occur when the fluid is cooled during shut down because the ground temperature near the pipeline rises. This can change growing conditions, even near deeply buried insulated pipelines. Axial thermal loads also constrain the design and operation of a buried pipeline as higher operating temperatures are considered. As such, strain based design provides the opportunity to design for higher operating temperature than allowable stress based design methods. Expansion loops can partially relieve the thermal stress at a given temperature. As the design temperature increase, there is a point at which above grade pipelines become attractive options, although the materials and welding procedures must be suitable for low temperature service. 3 refs., 1 tab., 10 figs.

  18. High-Temperature Corrosion Behavior of Alloy 617 in Helium Environment of Very High Temperature Gas Reactor

    International Nuclear Information System (INIS)

    Lee, Gyeong-Geun; Jung, Sujin; Kim, Daejong; Jeong, Yong-Whan; Kim, Dong-Jin

    2012-01-01

    Alloy 617 is a Ni-base superalloy and a candidate material for the intermediate heat exchanger (IHX) of a very high temperature gas reactor (VHTR) which is one of the next generation nuclear reactors under development. The high operating temperature of VHTR enables various applications such as mass production of hydrogen with high energy efficiency. Alloy 617 has good creep resistance and phase stability at high temperatures in an air environment. However, it was reported that the mechanical properties decreased at a high temperature in an impure helium environment. In this study, high-temperature corrosion tests were carried out at 850°C-950°C in a helium environment containing the impurity gases H_2, CO, and CH_4, in order to examine the corrosion behavior of Alloy 617. Until 250 h, Alloy 617 specimens showed a parabolic oxidation behavior at all temperatures. The activation energy for oxidation in helium environment was 154 kJ/mol. The SEM and EDS results elucidated a Cr-rich surface oxide layer, Al-rich internal oxides and depletion of grain boundary carbides. The thickness and depths of degraded layers also showed a parabolic relationship with time. A normal grain growth was observed in the Cr-rich surface oxide layer. When corrosion tests were conducted in a pure helium environment, the oxidation was suppressed drastically. It was elucidated that minor impurity gases in the helium would have detrimental effects on the high temperature corrosion behavior of Alloy 617 for the VHTR application.

  19. Low temperature superconductor and aligned high temperature superconductor magnetic dipole system and method for producing high magnetic fields

    Science.gov (United States)

    Gupta, Ramesh; Scanlan, Ronald; Ghosh, Arup K.; Weggel, Robert J.; Palmer, Robert; Anerella, Michael D.; Schmalzle, Jesse

    2017-10-17

    A dipole-magnet system and method for producing high-magnetic-fields, including an open-region located in a radially-central-region to allow particle-beam transport and other uses, low-temperature-superconducting-coils comprised of low-temperature-superconducting-wire located in radially-outward-regions to generate high magnetic-fields, high-temperature-superconducting-coils comprised of high-temperature-superconducting-tape located in radially-inward-regions to generate even higher magnetic-fields and to reduce erroneous fields, support-structures to support the coils against large Lorentz-forces, a liquid-helium-system to cool the coils, and electrical-contacts to allow electric-current into and out of the coils. The high-temperature-superconducting-tape may be comprised of bismuth-strontium-calcium-copper-oxide or rare-earth-metal, barium-copper-oxide (ReBCO) where the rare-earth-metal may be yttrium, samarium, neodymium, or gadolinium. Advantageously, alignment of the large-dimension of the rectangular-cross-section or curved-cross-section of the high-temperature-superconducting-tape with the high-magnetic-field minimizes unwanted erroneous magnetic fields. Alignment may be accomplished by proper positioning, tilting the high-temperature-superconducting-coils, forming the high-temperature-superconducting-coils into a curved-cross-section, placing nonconducting wedge-shaped-material between windings, placing nonconducting curved-and-wedge-shaped-material between windings, or by a combination of these techniques.

  20. Investigations into High Temperature Components and Packaging

    Energy Technology Data Exchange (ETDEWEB)

    Marlino, L.D.; Seiber, L.E.; Scudiere, M.B.; M.S. Chinthavali, M.S.; McCluskey, F.P.

    2007-12-31

    The purpose of this report is to document the work that was performed at the Oak Ridge National Laboratory (ORNL) in support of the development of high temperature power electronics and components with monies remaining from the Semikron High Temperature Inverter Project managed by the National Energy Technology Laboratory (NETL). High temperature electronic components are needed to allow inverters to operate in more extreme operating conditions as required in advanced traction drive applications. The trend to try to eliminate secondary cooling loops and utilize the internal combustion (IC) cooling system, which operates with approximately 105 C water/ethylene glycol coolant at the output of the radiator, is necessary to further reduce vehicle costs and weight. The activity documented in this report includes development and testing of high temperature components, activities in support of high temperature testing, an assessment of several component packaging methods, and how elevated operating temperatures would impact their reliability. This report is organized with testing of new high temperature capacitors in Section 2 and testing of new 150 C junction temperature trench insulated gate bipolar transistor (IGBTs) in Section 3. Section 4 addresses some operational OPAL-GT information, which was necessary for developing module level tests. Section 5 summarizes calibration of equipment needed for the high temperature testing. Section 6 details some additional work that was funded on silicon carbide (SiC) device testing for high temperature use, and Section 7 is the complete text of a report funded from this effort summarizing packaging methods and their reliability issues for use in high temperature power electronics. Components were tested to evaluate the performance characteristics of the component at different operating temperatures. The temperature of the component is determined by the ambient temperature (i.e., temperature surrounding the device) plus the

  1. Fusion blanket high-temperature heat transfer

    International Nuclear Information System (INIS)

    Fillo, J.A.

    1983-01-01

    Deep penetration of 14 MeV neutrons makes two-temperature region blankets feasible. A relatively low-temperature (approx. 300 0 C) metallic structure is the vacuum/coolant pressure boundary, while the interior of the blanket, which is a simple packed bed of nonstructural material, operates at very high temperatures (>1000 0 C). The water-cooled shell structure is thermally insulated from the steam-cooled interior. High-temperature steam can dramatically increase the efficiency of electric power generation, as well as produce hydrogen and oxygen-based synthetic fuels at high-efficiency

  2. Facet formation and ohmic contacts for laser diodes on non- and semipolar GaN

    Energy Technology Data Exchange (ETDEWEB)

    Rass, Jens; Ploch, Simon; Vogt, Patrick [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Wernicke, Tim; Redaelli, Luca; Einfeldt, Sven [Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Kneissl, Michael [Technische Universitaet Berlin (Germany). Institute of Solid State Physics; Ferdinand- Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

    2009-07-01

    Group-III-Nitride heterostructures grown on nonpolar and semipolar planes allow the realization of highly efficient devices such as laser diodes and LEDs due to the reduction or elimination of the quantum confined Stark effect. However, the realization of these devices poses a number of challenges, in particular the formation of smooth laser facets and the fabrication of ohmic contacts. In this talk optimized schemes for facet formation and contact resistance reduction for nitride based devices on non- and semipolar planes are presented, and various concepts are discussed. We discuss a laser scribing process that allows the cleaving of facets along the c- and a-plane for devices grown on nonpolar substrates. For semipolar planes there is no low-index cleavage plane in order to form resonators along the projection of the c-axis. Therefore we have investigated etching techniques in order to produce flat facets perpendicular to the plane of growth. For the challenging formation of p-type contacts to GaN we discuss different methods such as chemical treatments, different metallization schemes and capping layers to reduce the contact resistivity.

  3. Investigation of silicon sensors quality as a function of the ohmic side processing technology

    CERN Document Server

    Bloch, P; Golubkov, S A; Golutvin, I A; Egorov, N; Konjkov, K; Kozlov, Y; Peisert, Anna; Sidorov, A; Zamiatin, N I; Cheremuhin, A E

    2002-01-01

    Silicon sensors designed for the CMS Preshower detector must have a high breakdown voltage in order to be fully efficient after a strong irradiation. Studies made by several groups left bracket 1,2,3 right bracket have underlined the importance of the p**+ side geometrical parameters, such as the metal width and the number and spacing of guard rings. We have in addition investigated the effects related to the ohmic side processing and found that the breakdown voltage depends strongly on the depth of the effective "dead" n**+ layer. By increasing this thickness from mum to 2.5mum, the fraction of sensors with breakdown voltage higher than 500V increased from 22% to more than 80%. On the other hand, it was noticed that the starting surface quality of the wafer (double side polished or single side polished) does not affect the detectors parameters for a given production technology. The thick n**+-layer protects against initial wafer surface and defects caused by the technological treatment during the detector pr...

  4. A Delay Time Measurement of ULTRAS (Ultra-high Temperature Ultrasonic Response Analysis System) for a High Temperature Experiment

    International Nuclear Information System (INIS)

    Koo, Kil Mo; Kim, Sang Baik

    2010-01-01

    The temperature measurement of very high temperature core melt is of importance in a high temperature as the molten pool experiment in which gap formation between core melt and the reactor lower head, and the effect of the gap on thermal behavior are to be measured. The existing temperature measurement techniques have some problems, which the thermocouple, one of the contact methods, is restricted to under 2000 .deg. C, and the infrared thermometry, one of the non-contact methods, is unable to measure an internal temperature and very sensitive to the interference from reacted gases. In order to solve these problems, the delay time technique of ultrasonic wavelets due to high temperature has two sorts of stage. As a first stage, a delay time measurement of ULTRAS (Ultra-high Temperature Ultrasonic Response Analysis System) is suggested. As a second stage, a molten material temperature was measured up to 2300 .deg. C. Also, the optimization design of the UTS (ultrasonic temperature sensor) with persistence at the high temperature was suggested in this paper. And the utilization of the theory suggested in this paper and the efficiency of the developed system are performed by special equipment and some experiments supported by KRISS (Korea Research Institute of Standard and Science)

  5. Synthesis of ZnO comb-like nanostructures for high sensitivity H2S ...

    Indian Academy of Sciences (India)

    2017-09-15

    Sep 15, 2017 ... H2S gas sensor; ZnO comb-like nanostructures; chemical vapour deposition; vapour–solid growth; ... tube at a flow rate of 15 sccm, when the central temperature .... behaviour, in this case, under low input power implies ohmic.

  6. Electrical property heterogeneity at transparent conductive oxide/organic semiconductor interfaces: mapping contact ohmicity using conducting-tip atomic force microscopy.

    Science.gov (United States)

    MacDonald, Gordon A; Veneman, P Alexander; Placencia, Diogenes; Armstrong, Neal R

    2012-11-27

    We demonstrate mapping of electrical properties of heterojunctions of a molecular semiconductor (copper phthalocyanine, CuPc) and a transparent conducting oxide (indium-tin oxide, ITO), on 20-500 nm length scales, using a conductive-probe atomic force microscopy technique, scanning current spectroscopy (SCS). SCS maps are generated for CuPc/ITO heterojunctions as a function of ITO activation procedures and modification with variable chain length alkyl-phosphonic acids (PAs). We correlate differences in small length scale electrical properties with the performance of organic photovoltaic cells (OPVs) based on CuPc/C(60) heterojunctions, built on these same ITO substrates. SCS maps the "ohmicity" of ITO/CuPc heterojunctions, creating arrays of spatially resolved current-voltage (J-V) curves. Each J-V curve is fit with modified Mott-Gurney expressions, mapping a fitted exponent (γ), where deviations from γ = 2.0 suggest nonohmic behavior. ITO/CuPc/C(60)/BCP/Al OPVs built on nonactivated ITO show mainly nonohmic SCS maps and dark J-V curves with increased series resistance (R(S)), lowered fill-factors (FF), and diminished device performance, especially near the open-circuit voltage. Nearly optimal behavior is seen for OPVs built on oxygen-plasma-treated ITO contacts, which showed SCS maps comparable to heterojunctions of CuPc on clean Au. For ITO electrodes modified with PAs there is a strong correlation between PA chain length and the degree of ohmicity and uniformity of electrical response in ITO/CuPc heterojunctions. ITO electrodes modified with 6-8 carbon alkyl-PAs show uniform and nearly ohmic SCS maps, coupled with acceptable CuPc/C(60)OPV performance. ITO modified with C14 and C18 alkyl-PAs shows dramatic decreases in FF, increases in R(S), and greatly enhanced recombination losses.

  7. Melt processed high-temperature superconductors

    CERN Document Server

    1993-01-01

    The achievement of large critical currents is critical to the applications of high-temperature superconductors. Recent developments have shown that melt processing is suitable for producing high J c oxide superconductors. Using magnetic forces between such high J c oxide superconductors and magnets, a person could be levitated.This book has grown largely out of research works on melt processing of high-temperature superconductors conducted at ISTEC Superconductivity Research Laboratory. The chapters build on melt processing, microstructural characterization, fundamentals of flux pinning, criti

  8. Very-high-temperature reactors for future use

    International Nuclear Information System (INIS)

    Kasten, P.R.

    1988-01-01

    Very-High-Temperature Reactors (VHTRs) show promise for economic generation of electricity and of high-temperature process heat. The key is the development of high-temperature materials which permit gas turbine VHTRs to generate electricity economically, at helium temperatures which can be used for fossil fuel conversion processes. 7 refs., 5 figs

  9. Very-high-temperature reactors for future use

    International Nuclear Information System (INIS)

    Kasten, P.R.

    1988-08-01

    Very-high-temperature reactors (VHTRs) show promise for economic generation of electricity and of high-temperature process heat. The key is the development of high-temperature materials which permit gas turbine VHTRs to generate electricity economically, at reactor coolant temperatures which can be used for fossil fuel conversion processes. 7 refs., 5 figs

  10. Rigorous treatment of the non-ohmic d.c. conductivity due to phonon-assisted tunneling from localized to extended states

    International Nuclear Information System (INIS)

    Majernikova, E.

    1984-03-01

    A quantitative treatment of the non-ohmic current response due to delocalization of shallow localized electrons in a model of a disordered solid is given. A phonon-assisted tunneling in electric field from shallow localized to extended states is confirmed as a mechanism leading to the dependence which was experimentally found for chalcogenide glasses. (author)

  11. High Isolation Single-Pole Four-Throw RF MEMS Switch Based on Series-Shunt Configuration

    Directory of Open Access Journals (Sweden)

    Tejinder Singh

    2014-01-01

    Full Text Available This paper presents a novel design of single-pole four-throw (SP4T RF-MEMS switch employing both capacitive and ohmic switches. It is designed on high-resistivity silicon substrate and has a compact area of 1.06 mm2. The series or ohmic switches have been designed to provide low insertion loss with good ohmic contact. The pull-in voltage for ohmic switches is calculated to be 7.19 V. Shunt or capacitive switches have been used in each port to improve the isolation for higher frequencies. The proposed SP4T switch provides excellent RF performances with isolation better than 70.64 dB and insertion loss less than 0.72 dB for X-band between the input port and each output port.

  12. The role of creep in the time-dependent resistance of Ohmic gold contacts in radio frequency microelectromechanical system devices

    Science.gov (United States)

    Rezvanian, O.; Brown, C.; Zikry, M. A.; Kingon, A. I.; Krim, J.; Irving, D. L.; Brenner, D. W.

    2008-07-01

    It is shown that measured and calculated time-dependent electrical resistances of closed gold Ohmic switches in radio frequency microelectromechanical system (rf-MEMS) devices are well described by a power law that can be derived from a single asperity creep model. The analysis reveals that the exponent and prefactor in the power law arise, respectively, from the coefficient relating creep rate to applied stress and the initial surface roughness. The analysis also shows that resistance plateaus are not, in fact, limiting resistances but rather result from the small coefficient in the power law. The model predicts that it will take a longer time for the contact resistance to attain a power law relation with each successive closing of the switch due to asperity blunting. Analysis of the first few seconds of the measured resistance for three successive openings and closings of one of the MEMS devices supports this prediction. This work thus provides guidance toward the rational design of Ohmic contacts with enhanced reliabilities by better defining variables that can be controlled through material selection, interface processing, and switch operation.

  13. Turbulence and energy confinement in TORE SUPRA ohmic discharges

    International Nuclear Information System (INIS)

    Garbet, X.; Payan, J.; Laviron, C.; Devynck, P.; Saha, S.K.; Capes, H.; Chen, X.P.; Coulon, J.P.; Gil, C.; Harris, G.; Hutter, T.; Pecquet, A.L.

    1992-06-01

    Results on confinement and turbulence from a set of ohmic discharges in Tore Supra are discussed. The attention is focused on the saturation of the energy confinement time and it is emphasized that this saturation could be explained by a saturation of the electron heat diffusivity. Ion behaviour is indeed governed by dilution and equipartition effects. Although the ion heat transport is never neoclassical, there is no enhanced degradation at the saturation. This behaviour is confirmed by turbulence measurements given by CO 2 laser coherent scattering. The density fluctuations level follows the electron heat diffusivity variations with the average density. Waves propagating in the ion diamagnetic direction are always present in turbulence frequency spectra. Thus, the saturation cannot be explained by the onset of an ion turbulence. The existence of an ion turbulence at the edge at all densities cannot be excluded. However, this ion feature in scattering spectra could be explained by a Doppler shift associated to an inversion point of the radial electric field at the edge

  14. Limits on the field of ohmic heating solenoids, applied to a tokamak TNS

    International Nuclear Information System (INIS)

    Turner, L.R.

    1978-01-01

    If the ohmic heating solenoid for the TNS or other large tokamak is an ungraded cryostable superconducting solenoid, with NbTi at 4.2 K as the superconductor, then the smallest outer diameter is not achieved at the highest attainable field. There is a lower optimum field which minimizes the outer diameter for a given volt-second requirement. At higher fields the mean diameter decreases; but the high fields require more superconductor, more copper stabilizer, more stainless steel for support, and more liquid helium coolant. For the GA-ANL design for TNS, the optimum field is 7.55 T and the minimum outside diameter for the solenoid is 2.15 m. If, on the other hand, the solenoid is graded, with more NbTi, copper, and stainless steel on the inner turns where the field is higher, then the volt-seconds can always be increased, for a given outer diameter, by adding more turns at a higher field inside until either the critical field is reached or the solenoid bore is filled. However, the material and money required to add a few more volt-seconds increases rapidly with field

  15. Limits on the field of ohmic heating solenoids, applied to a tokamak TNS

    International Nuclear Information System (INIS)

    Turner, L.R.

    1977-01-01

    If the ohmic heating solenoid for the TNS or other large tokamak is an ungraded cryostable superconducting solenoid, with NbTi at 4.2 K as the superconductor, then the smallest outer diameter is not achieved at the highest attainable field. There is a lower optimum field which minimizes the outer diameter for a given volt-second requirement. At higher fields the mean diameter decreases; but the high fields require more superconductor, more copper stabilizer, more stainless steel for support, and more liquid helium coolant. For the GA-ANL design for TNS, the optimum field is 7.55 T and the minimum outside diameter for the solenoid is 2.15 m. If, on the other hand, the solenoid is graded, with more NbTi, copper, and stainless steel on the inner turns where the field is higher, than the volt-seconds can always be increased, for a given outer diameter, by adding more turns at a higher field inside until either the critical field is reached or the solenoid bore is filled. However, the material and money required to add a few more volt-seconds increases rapidly with field

  16. High-temperature bulk acoustic wave sensors

    International Nuclear Information System (INIS)

    Fritze, Holger

    2011-01-01

    Piezoelectric crystals like langasite (La 3 Ga 5 SiO 14 , LGS) and gallium orthophosphate (GaPO 4 ) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 °C and 900 °C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low- and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the

  17. High-temperature bulk acoustic wave sensors

    Science.gov (United States)

    Fritze, Holger

    2011-01-01

    Piezoelectric crystals like langasite (La3Ga5SiO14, LGS) and gallium orthophosphate (GaPO4) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 °C and 900 °C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low- and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the Butterworth

  18. High-temperature metallography setup

    International Nuclear Information System (INIS)

    Blumenfeld, M.; Shmarjahu, D.; Elfassy, S.

    1979-06-01

    A high-temperature metallography setup is presented. In this setup the observation of processes such as that of copper recrystallization was made possible, and the structure of metals such as uranium could be revealed. A brief historical review of part of the research works that have been done with the help of high temperature metallographical observation technique since the beginning of this century is included. Detailed description of metallographical specimen preparation technique and theoretical criteria based on the rate of evaporation of materials present on the polished surface of the specimens are given

  19. High-pressure-high-temperature treatment of natural diamonds

    CERN Document Server

    Royen, J V

    2002-01-01

    The results are reported of high-pressure-high-temperature (HPHT) treatment experiments on natural diamonds of different origins and with different impurity contents. The diamonds are annealed in a temperature range up to 2000 sup o C at stabilizing pressures up to 7 GPa. The evolution is studied of different defects in the diamond crystal lattice. The influence of substitutional nitrogen atoms, plastic deformation and the combination of these is discussed. Diamonds are characterized at room and liquid nitrogen temperature using UV-visible spectrophotometry, Fourier transform infrared spectrophotometry and photoluminescence spectrometry. The economic implications of diamond HPHT treatments are discussed.

  20. High Temperature Superconductor Machine Prototype

    DEFF Research Database (Denmark)

    Mijatovic, Nenad; Jensen, Bogi Bech; Træholt, Chresten

    2011-01-01

    A versatile testing platform for a High Temperature Superconductor (HTS) machine has been constructed. The stationary HTS field winding can carry up to 10 coils and it is operated at a temperature of 77K. The rotating armature is at room temperature. Test results and performance for the HTS field...

  1. Postannealing Effect at Various Gas Ambients on Ohmic Contacts of Pt/ZnO Nanobilayers toward Ultraviolet Photodetectors

    Directory of Open Access Journals (Sweden)

    Chung-Hua Chao

    2013-01-01

    Full Text Available This paper describes a fabrication and characterization of ultraviolet (UV photodetectors based on Ohmic contacts using Pt electrode onto the epitaxial ZnO (0002 thin film. Plasma enhanced chemical vapor deposition (PECVD system was employed to deposit ZnO (0002 thin films onto silicon substrates, and radio-frequency (RF magnetron sputtering was used to deposit Pt top electrode onto the ZnO thin films. The as-deposited Pt/ZnO nanobilayer samples were then annealed at 450∘C in two different ambients (argon and nitrogen to obtain optimal Ohmic contacts. The crystal structure, surface morphology, optical properties, and wettability of ZnO thin films were analyzed by X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, atomic force microscopy (AFM, photoluminescence (PL, UV-Vis-NIR spectrophotometer, and contact angle meter, respectively. Moreover, the photoconductivity of the Pt/ZnO nanobilayers was also investigated for UV photodetector application. The above results showed that the optimum ZnO sample was synthesized with gas flow rate ratio of 1 : 3 diethylzinc [DEZn, Zn(C2H52] to carbon dioxide (CO2 and then combined with Pt electrode annealed at 450∘C in argon ambient, exhibiting good crystallinity as well as UV photo responsibility.

  2. Raman spectroscopy in high temperature chemistry

    International Nuclear Information System (INIS)

    Drake, M.C.; Rosenblatt, G.M.

    1979-01-01

    Raman spectroscopy (largely because of advances in laser and detector technology) is assuming a rapidly expanding role in many areas of research. This paper reviews the contribution of Raman spectroscopy in high temperature chemistry including molecular spectroscopy on static systems and gas diagnostic measurements on reactive systems. An important aspect of high temperature chemistry has been the identification and study of the new, and often unusual, gaseous molecules which form at high temperatures. Particularly important is the investigation of vibrational-rotational energy levels and electronic states which determine thermodynamic properties and describe chemical bonding. Some advantages and disadvantages of high temperature Raman spectrosocpy for molecular studies on static systems are compared: (1) Raman vs infrared; (2) gas-phase vs condensed in matries; and (3) atmospheric pressure Raman vs low pressure techniques, including mass spectroscopy, matrix isolation, and molecular beams. Raman studies on molecular properties of gases, melts, and surfaces are presented with emphasis on work not covered in previous reviews of high temperature and matrix isolation Raman spectroscopy

  3. Raman spectroscopy in high temperature chemistry

    International Nuclear Information System (INIS)

    Drake, M.C.; Rosenblatt, G.M.

    1979-01-01

    Raman spectroscopy (largely because of advances in laser and detector technology) is assuming a rapidly expanding role in many areas of research. This paper reviews the contribution of Raman spectroscopy in high temperature chemistry including molecular spectroscopy on static systems and gas diagnostic measurements on reactive systems. An important aspect of high temperature chemistry has been the identification and study of the new, and often unusual, gaseous molecules which form at high temperatures. Particularly important is the investigation of vibrational-rotational energy levels and electronic states which determine thermodynamic properties and describe chemical bonding. Some advantages and disadvantages of high temperature Raman spectrosocpy for molecular studies on static systems are compared: (1) Raman vs infrared; (2) gas-phase vs condensed in matrices; and (3) atmospheric pressure Raman vs low pressure techniques, including mass spectroscopy, matrix isolation, and molecular beams. Raman studies on molecular properties of gases, melts, and surfaces are presented with emphasis on work not covered in previous reviews of high temperature and matrix isolation Raman spectroscopy

  4. Stability of High Temperature Standard Platinum Resistance Thermometers at High Temperatures

    OpenAIRE

    Y. A. ABDELAZIZ; F. M. MEGAHED

    2010-01-01

    An investigation of the stability of high temperature standard platinum resistance thermometers HTSPRTs has been carried out for two different designs thermometers (with nominal resistance 0.25 Ω and 2.5 Ω) from two different suppliers. The thermometers were heated for more than 160 hours at temperatures above 960 0C using a vertical furnace with a ceramic block. A study was made of the influence of the heat treatment on the stability of the resistance at the triple point of water, and on the...

  5. High Temperature Chemistry at NASA: Hot Topics

    Science.gov (United States)

    Jacobson, Nathan S.

    2014-01-01

    High Temperature issues in aircraft engines Hot section: Ni and Co based Superalloys Oxidation and Corrosion (Durability) at high temperatures. Thermal protection system (TPS) and RCC (Reinforced Carbon-Carbon) on the Space Shuttle Orbiter. High temperatures in other worlds: Planets close to their stars.

  6. High Temperature Transparent Furnace Development

    Science.gov (United States)

    Bates, Stephen C.

    1997-01-01

    This report describes the use of novel techniques for heat containment that could be used to build a high temperature transparent furnace. The primary objective of the work was to experimentally demonstrate transparent furnace operation at 1200 C. Secondary objectives were to understand furnace operation and furnace component specification to enable the design and construction of a low power prototype furnace for delivery to NASA in a follow-up project. The basic approach of the research was to couple high temperature component design with simple concept demonstration experiments that modify a commercially available transparent furnace rated at lower temperature. A detailed energy balance of the operating transparent furnace was performed, calculating heat losses through the furnace components as a result of conduction, radiation, and convection. The transparent furnace shells and furnace components were redesigned to permit furnace operation at at least 1200 C. Techniques were developed that are expected to lead to significantly improved heat containment compared with current transparent furnaces. The design of a thermal profile in a multizone high temperature transparent furnace design was also addressed. Experiments were performed to verify the energy balance analysis, to demonstrate some of the major furnace improvement techniques developed, and to demonstrate the overall feasibility of a high temperature transparent furnace. The important objective of the research was achieved: to demonstrate the feasibility of operating a transparent furnace at 1200 C.

  7. HIgh Temperature Photocatalysis over Semiconductors

    Science.gov (United States)

    Westrich, Thomas A.

    Due in large part to in prevalence of solar energy, increasing demand of energy production (from all sources), and the uncertain future of petroleum energy feedstocks, solar energy harvesting and other photochemical systems will play a major role in the developing energy market. This dissertation focuses on a novel photochemical reaction process: high temperature photocatalysis (i.e., photocatalysis conducted above ambient temperatures, T ≥ 100°C). The overarching hypothesis of this process is that photo-generated charge carriers are able to constructively participate in thermo-catalytic chemical reactions, thereby increasing catalytic rates at one temperature, or maintaining catalytic rates at lower temperatures. The photocatalytic oxidation of carbon deposits in an operational hydrocarbon reformer is one envisioned application of high temperature photocatalysis. Carbon build-up during hydrocarbon reforming results in catalyst deactivation, in the worst cases, this was shown to happen in a period of minutes with a liquid hydrocarbon. In the presence of steam, oxygen, and above-ambient temperatures, carbonaceous deposits were photocatalytically oxidized over very long periods (t ≥ 24 hours). This initial experiment exemplified the necessity of a fundamental assessment of high temperature photocatalytic activity. Fundamental understanding of the mechanisms that affect photocatalytic activity as a function of temperatures was achieved using an ethylene photocatalytic oxidation probe reaction. Maximum ethylene photocatalytic oxidation rates were observed between 100 °C and 200 °C; the maximum photocatalytic rates were approximately a factor of 2 larger than photocatalytic rates at ambient temperatures. The loss of photocatalytic activity at temperatures above 200 °C is due to a non-radiative multi-phonon recombination mechanism. Further, it was shown that the fundamental rate of recombination (as a function of temperature) can be effectively modeled as a

  8. Current-voltage curves of atomic-sized transition metal contacts: An explanation of why Au is ohmic and Pt is not

    DEFF Research Database (Denmark)

    Nielsen, S.K.; Brandbyge, Mads; Hansen, K.

    2002-01-01

    We present an experimental study of current-voltage (I-V) curves on atomic-sized Au and Pt contacts formed under cryogenic vacuum (4.2 K). Whereas I-V curves for Au are almost Ohmic, the conductance G=I/V for Pt decreases with increasing voltage, resulting in distinct nonlinear I-V behavior...

  9. High temperature reaction kinetics

    International Nuclear Information System (INIS)

    Jonah, C.D.; Beno, M.F.; Mulac, W.A.; Bartels, D.

    1985-01-01

    During the last year the dependence of the apparent rate of OD + CO on water pressure was measured at 305, 570, 865 and 1223 K. An explanation was found and tested for the H 2 O dependence of the apparent rate of OH(OD) + CO at high temperatures. The isotope effect for OH(D) with CO was determined over the temperature range 330 K to 1225 K. The reason for the water dependence of the rate of OH(OD) + CO near room temperatures has been investigated but no clear explanation has been found. 1 figure

  10. High-frequency applications of high-temperature superconductor thin films

    Science.gov (United States)

    Klein, N.

    2002-10-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz.

  11. High-frequency applications of high-temperature superconductor thin films

    International Nuclear Information System (INIS)

    Klein, N.

    2002-01-01

    High-temperature superconducting thin films offer unique properties which can be utilized for a variety of high-frequency device applications in many areas related to the strongly progressing market of information technology. One important property is an exceptionally low level of microwave absorption at temperatures attainable with low power cryocoolers. This unique property has initiated the development of various novel type of microwave devices and commercialized subsystems with special emphasis on application in advanced microwave communication systems. The second important achievement related to efforts in oxide thin and multilayer technology was the reproducible fabrication of low-noise Josephson junctions in high-temperature superconducting thin films. As a consequence of this achievement, several novel nonlinear high-frequency devices, most of them exploiting the unique features of the ac Josephson effect, have been developed and found to exhibit challenging properties to be utilized in basic metrology and Terahertz technology. On the longer timescale, the achievements in integrated high-temperature superconductor circuit technology may offer a strong potential for the development of digital devices with possible clock frequencies in the range of 100 GHz. (author)

  12. Measurement of the electron and ion temperatures by the x-ray imaging crystal spectrometer on joint Texas experimental tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Yan, W.; Chen, Z. Y., E-mail: zychen@hust.edu.cn; Huang, D. W.; Tong, R. H.; Wang, S. Y.; Wei, Y. N.; Ma, T. K.; Zhuang, G. [State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan (China); Jin, W. [Center of Interface Dynamics for Sustainability, China Academy of Engineering Physics, Chengdu, Sichuan 610200 (China); Lee, S. G. [National Fusion Research Institute, Daejeon 305-333 (Korea, Republic of); Shi, Y. J. [Department of Nuclear Engineering, Seoul National University, Seoul 08826 (Korea, Republic of)

    2016-11-15

    An x-ray imaging crystal spectrometer has been developed on joint Texas experimental tokamak for the measurement of electron and ion temperatures from the K{sub α} spectra of helium-like argon and its satellite lines. A two-dimensional multi-wire proportional counter has been applied to detect the spectra. The electron and ion temperatures have been obtained from the Voigt fitting with the spectra of helium-like argon ions. The profiles of electron and ion temperatures show the dependence on electron density in ohmic plasmas.

  13. Review on fatigue behavior of high-strength concrete after high temperature

    Science.gov (United States)

    Zhao, Dongfu; Jia, Penghe; Gao, Haijing

    2017-06-01

    The fatigue of high-strength concrete after high temperature has begun to attract attention. But so far the researches work about the fatigue of high-strength concrete after high temperature have not been reported. This article based on a large number of literature. The research work about the fatigue of high-strength concrete after high temperature are reviewed, analysed and expected, which can provide some reference for the experimental study of fatigue damage analysis.

  14. Thermal degradation of ohmic contacts on semipolar (11-22) GaN films grown on m-plane (1-100) sapphire substrates

    International Nuclear Information System (INIS)

    Kim, Doo Soo; Kim, Deuk Young; Seo, Yong Gon; Kim, Ji Hoon; Hwang, Sung Min; Baik, Kwang Hyeon

    2012-01-01

    Semipolar (11-22) GaN films were grown on m-plane (1-100) sapphire substrates by using metalorganic chemical vapor deposition. The line widths of the omega rocking curves of the semipolar GaN films were 498 arcsec along the [11-23] GaN direction and 908 arcsec along the [10-10] GaN direction. The properties of the Ti/Al/Ni/Au metal contact were investigated using transmission-line-method patterns oriented in both the [11-23] GaN and the [10-10] GaN directions of semipolar (11-22) GaN. The minimum specific contact resistance of ∼3.6 x 10 -4 Ω·cm -2 was obtained on as-deposited metal contacts. The Ohmic contact properties of semipolar (11-22) GaN became degraded with increasing annealing temperature above 400 .deg. C. The thermal degradation of the metal contacts may be attributed to the surface property of N-polarity on the semipolar (11-22) GaN films. Also, the semipolar (11-22) GaN films did not show clear anisotropic behavior of the electrical properties for different azimuthal angles.

  15. Materials corrosion and protection at high temperatures

    International Nuclear Information System (INIS)

    Balbaud, F.; Desgranges, Clara; Martinelli, Laure; Rouillard, Fabien; Duhamel, Cecile; Marchetti, Loic; Perrin, Stephane; Molins, Regine; Chevalier, S.; Heintz, O.; David, N.; Fiorani, J.M.; Vilasi, M.; Wouters, Y.; Galerie, A.; Mangelinck, D.; Viguier, B.; Monceau, D.; Soustelle, M.; Pijolat, M.; Favergeon, J.; Brancherie, D.; Moulin, G.; Dawi, K.; Wolski, K.; Barnier, V.; Rebillat, F.; Lavigne, O.; Brossard, J.M.; Ropital, F.; Mougin, J.

    2011-01-01

    This book was made from the lectures given in 2010 at the thematic school on 'materials corrosion and protection at high temperatures'. It gathers the contributions from scientists and engineers coming from various communities and presents a state-of-the-art of the scientific and technological developments concerning the behaviour of materials at high temperature, in aggressive environments and in various domains (aerospace, nuclear, energy valorization, and chemical industries). It supplies pedagogical tools to grasp high temperature corrosion thanks to the understanding of oxidation mechanisms. It proposes some protection solutions for materials and structures. Content: 1 - corrosion costs; macro-economical and metallurgical approach; 2 - basic concepts of thermo-chemistry; 3 - introduction to the Calphad (calculation of phase diagrams) method; 4 - use of the thermodynamic tool: application to pack-cementation; 5 - elements of crystallography and of real solids description; 6 - diffusion in solids; 7 - notions of mechanics inside crystals; 8 - high temperature corrosion: phenomena, models, simulations; 9 - pseudo-stationary regime in heterogeneous kinetics; 10 - nucleation, growth and kinetic models; 11 - test experiments in heterogeneous kinetics; 12 - mechanical aspects of metal/oxide systems; 13 - coupling phenomena in high temperature oxidation; 14 - other corrosion types; 15 - methods of oxidized surfaces analysis at micro- and nano-scales; 16 - use of SIMS in the study of high temperature corrosion of metals and alloys; 17 - oxidation of ceramics and of ceramic matrix composite materials; 18 - protective coatings against corrosion and oxidation; 19 - high temperature corrosion in the 4. generation of nuclear reactor systems; 20 - heat exchangers corrosion in municipal waste energy valorization facilities; 21 - high temperature corrosion in oil refining and petrochemistry; 22 - high temperature corrosion in new energies industry. (J.S.)

  16. High-temperature uncertainty

    International Nuclear Information System (INIS)

    Timusk, T.

    2005-01-01

    Recent experiments reveal that the mechanism responsible for the superconducting properties of cuprate materials is even more mysterious than we thought. Two decades ago, Georg Bednorz and Alex Mueller of IBM's research laboratory in Zurich rocked the world of physics when they discovered a material that lost all resistance to electrical current at the record temperature of 36 K. Until then, superconductivity was thought to be a strictly low-temperature phenomenon that required costly refrigeration. Moreover, the IBM discovery - for which Bednorz and Mueller were awarded the 1987 Nobel Prize for Physics - was made in a ceramic copper-oxide material that nobody expected to be particularly special. Proposed applications for these 'cuprates' abounded. High-temperature superconductivity, particularly if it could be extended to room temperature, offered the promise of levitating trains, ultra-efficient power cables, and even supercomputers based on superconducting quantum interference devices. But these applications have been slow to materialize. Moreover, almost 20 years on, the physics behind this strange state of matter remains a mystery. (U.K.)

  17. RPC operation at high temperature

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Stante, L; Liberti, B; Paoloni, A; Pastori, E; Santonico, R

    2003-01-01

    The resistive electrodes of RPCs utilised in several current experiments (ATLAS, CMS, ALICE, BABAR and ARGO) are made of phenolic /melaminic polymers, with room temperature resistivities ranging from 10**1**0 Omega cm, for high rate operation in avalanche mode, to 5 multiplied by 10**1**1 Omega cm, for streamer mode operation at low rate. The resistivity has however a strong temperature dependence, decreasing exponentially with increasing temperature. We have tested several RPCs with different electrode resistivities in avalanche as well as in streamer mode operation. The behaviours of the operating current and of the counting rate have been studied at different temperatures. Long-term operation has also been studied at T = 45 degree C and 35 degree C, respectively, for high and low resistivity electrodes RPCs.

  18. HYFIRE: a tokamak/high-temperature electrolysis system

    International Nuclear Information System (INIS)

    Fillo, J.A.; Powell, J.P.; Benenati, R.; Varljen, T.C.; Chi, J.W.H.; Karbowski, J.S.

    1981-01-01

    The HYFIRE studies to date have investigated a number of technical approaches for using the thermal energy produced in a high-temperature Tokamak blanket to provide the electrical and thermal energy required to drive a high-temperature (> 1000 0 C) water electrolysis process. Current emphasis is on two design points, one consistent with electrolyzer peak inlet temperatures of 1400 0 C, which is an extrapolation of present experience, and one consistent with a peak electrolyzer temperature of 1100 0 C. This latter condition is based on current laboratory experience with high-temperature solid electrolyte fuel cells. Our major conclusion to date is that the technical integration of fusion and high-temperature electrolysis appears to be feasible and that overall hydrogen production efficiencies of 50 to 55% seem possible

  19. High temperature phase equilibria and phase diagrams

    CERN Document Server

    Kuo, Chu-Kun; Yan, Dong-Sheng

    2013-01-01

    High temperature phase equilibria studies play an increasingly important role in materials science and engineering. It is especially significant in the research into the properties of the material and the ways in which they can be improved. This is achieved by observing equilibrium and by examining the phase relationships at high temperature. The study of high temperature phase diagrams of nonmetallic systems began in the early 1900s when silica and mineral systems containing silica were focussed upon. Since then technical ceramics emerged and more emphasis has been placed on high temperature

  20. Borehole Stability in High-Temperature Formations

    Science.gov (United States)

    Yan, Chuanliang; Deng, Jingen; Yu, Baohua; Li, Wenliang; Chen, Zijian; Hu, Lianbo; Li, Yang

    2014-11-01

    In oil and gas drilling or geothermal well drilling, the temperature difference between the drilling fluid and formation will lead to an apparent temperature change around the borehole, which will influence the stress state around the borehole and tend to cause borehole instability in high geothermal gradient formations. The thermal effect is usually not considered as a factor in most of the conventional borehole stability models. In this research, in order to solve the borehole instability in high-temperature formations, a calculation model of the temperature field around the borehole during drilling is established. The effects of drilling fluid circulation, drilling fluid density, and mud displacement on the temperature field are analyzed. Besides these effects, the effect of temperature change on the stress around the borehole is analyzed based on thermoelasticity theory. In addition, the relationships between temperature and strength of four types of rocks are respectively established based on experimental results, and thermal expansion coefficients are also tested. On this basis, a borehole stability model is established considering thermal effects and the effect of temperature change on borehole stability is also analyzed. The results show that the fracture pressure and collapse pressure will both increase as the temperature of borehole rises, and vice versa. The fracture pressure is more sensitive to temperature. Temperature has different effects on collapse pressures due to different lithological characters; however, the variation of fracture pressure is unrelated to lithology. The research results can provide a reference for the design of drilling fluid density in high-temperature wells.

  1. Ion filter for high temperature cleaning

    International Nuclear Information System (INIS)

    Kutomi, Yasuhiro; Nakamori, Masaharu.

    1994-01-01

    A porous ceramic pipe mainly comprising alumina is used as a base pipe, and then crud and radioactive ion adsorbing materials in high temperature and high pressure water mainly comprising a FeTiO 3 compound are flame-coated on the outer surface thereof to a film thickness of about 100 to 300μ m as an aimed value by an acetylene flame-coating method. The flame-coated FeTiO 3 layer is also porous, so that high temperature and high pressure water to be cleaned can pass through from the inside to the outside of the pipe. Cruds can be removed and radioactive ions can be adsorbed during passage. Since all the operations can be conducted at high temperature and high pressure state, cooling is no more necessary for the high temperature and high pressure water to be cleaned, heat efficiency of the plant can be improved and a cooling facility can be saved. Further, since the flame-coating of FeTiO 3 to the porous ceramic pipe can be conducted extremely easily compared with production of a sintering product, cost for the production of filter elements can be saved remarkably. (T.M.)

  2. High temperature fusion reactor design

    International Nuclear Information System (INIS)

    Harkness, S.D.; dePaz, J.F.; Gohar, M.Y.; Stevens, H.C.

    1979-01-01

    Fusion energy may have unique advantages over other systems as a source for high temperature process heat. A conceptual design of a blanket for a 7 m tokamak reactor has been developed that is capable of producing 1100 0 C process heat at a pressure of approximately 10 atmospheres. The design is based on the use of a falling bed of MgO spheres as the high temperature heat transfer system. By preheating the spheres with energy taken from the low temperature tritium breeding part of the blanket, 1086 MW of energy can be generated at 1100 0 C from a system that produces 3000 MW of total energy while sustaining a tritium breeding ratio of 1.07. The tritium breeding is accomplished using Li 2 O modules both in front of (6 cm thick) and behind (50 cm thick) the high temperature ducts. Steam is used as the first wall and front tritium breeding module coolant while helium is used in the rear tritium breeding region. The system produces 600 MW of net electricity for use on the grid

  3. High temperature divertor plasma operation

    International Nuclear Information System (INIS)

    Ohyabu, Nobuyoshi.

    1991-02-01

    High temperature divertor plasma operation has been proposed, which is expected to enhance the core energy confinement and eliminates the heat removal problem. In this approach, the heat flux is guided through divertor channel to a remote area with a large target surface, resulting in low heat load on the target plate. This allows pumping of the particles escaping from the core and hence maintaining of the high divertor temperature, which is comparable to the core temperature. The energy confinement is then determined by the diffusion coefficient of the core plasma, which has been observed to be much lower than the thermal diffusivity. (author)

  4. High-Temperature Shape Memory Polymers

    Science.gov (United States)

    Yoonessi, Mitra; Weiss, Robert A.

    2012-01-01

    physical conformation changes when exposed to an external stimulus, such as a change in temperature. Such materials have a permanent shape, but can be reshaped above a critical temperature and fixed into a temporary shape when cooled under stress to below the critical temperature. When reheated above the critical temperature (Tc, also sometimes called the triggering or switching temperature), the materials revert to the permanent shape. The current innovation involves a chemically treated (sulfonated, carboxylated, phosphonated, or other polar function group), high-temperature, semicrystalline thermoplastic poly(ether ether ketone) (Tg .140 C, Tm = 340 C) mix containing organometallic complexes (Zn++, Li+, or other metal, ammonium, or phosphonium salts), or high-temperature ionic liquids (e.g. hexafluorosilicate salt with 1-propyl-3- methyl imidazolium, Tm = 210 C) to form a network where dipolar or ionic interactions between the polymer and the low-molecular-weight or inorganic compound forms a complex that provides a physical crosslink. Hereafter, these compounds will be referred to as "additives". The polymer is semicrystalline, and the high-melt-point crystals provide a temporary crosslink that acts as a permanent crosslink just so long as the melting temperature is not exceeded. In this example case, the melting point is .340 C, and the shape memory critical temperature is between 150 and 250 C. PEEK is an engineering thermoplastic with a high Young fs modulus, nominally 3.6 GPa. An important aspect of the invention is the control of the PEEK functionalization (in this example, the sulfonation degree), and the thermal properties (i.e. melting point) of the additive, which determines the switching temperature. Because the compound is thermoplastic, it can be formed into the "permanent" shape by conventional plastics processing operations. In addition, the compound may be covalently cross - linked after forming the permanent shape by S-PEEK by applying ionizing

  5. High Temperature Operational Experiences of Helium Experimental Loop

    International Nuclear Information System (INIS)

    Kim, Chan Soo; Hong, Sung-Deok; Kim, Eung-Seon; Kim, Min Hwan

    2015-01-01

    The development of high temperature components of VHTR is very important because of its higher operation temperature than that of a common light water reactor and high pressure industrial process. The development of high temperature components requires the large helium loop. Many countries have high temperature helium loops or a plan for its construction. Table 1 shows various international state-of-the-art of high temperature and high pressure gas loops. HELP performance test results show that there is no problem in operation of HELP at the very high temperature experimental condition. These experimental results also provide the basic information for very high temperature operation with bench-scale intermediate heat exchanger prototype in HELP. In the future, various heat exchanger tests will give us the experimental data for GAMMA+ validation about transient T/H behavior of the IHX prototype and the optimization of the working fluid in the intermediate loop

  6. High-pressure high-temperature phase diagram of organic crystal paracetamol

    Science.gov (United States)

    Smith, Spencer J.; Montgomery, Jeffrey M.; Vohra, Yogesh K.

    2016-01-01

    High-pressure high-temperature (HPHT) Raman spectroscopy studies have been performed on the organic crystal paracetamol in a diamond anvil cell utilizing boron-doped heating diamond anvil. Isobaric measurements were conducted at pressures up to 8.5 GPa and temperature up to 520 K in five different experiments. Solid state phase transitions from monoclinic Form I  →  orthorhombic Form II were observed at various pressures and temperatures as well as transitions from Form II  →  unknown Form IV. The melting temperature for paracetamol was observed to increase with increasing pressures to 8.5 GPa. This new data is combined with previous ambient temperature high-pressure Raman and x-ray diffraction data to create the first HPHT phase diagram of paracetamol.

  7. High-pressure high-temperature phase diagram of organic crystal paracetamol

    International Nuclear Information System (INIS)

    Smith, Spencer J; Montgomery, Jeffrey M; Vohra, Yogesh K

    2016-01-01

    High-pressure high-temperature (HPHT) Raman spectroscopy studies have been performed on the organic crystal paracetamol in a diamond anvil cell utilizing boron-doped heating diamond anvil. Isobaric measurements were conducted at pressures up to 8.5 GPa and temperature up to 520 K in five different experiments. Solid state phase transitions from monoclinic Form I  →  orthorhombic Form II were observed at various pressures and temperatures as well as transitions from Form II  →  unknown Form IV. The melting temperature for paracetamol was observed to increase with increasing pressures to 8.5 GPa. This new data is combined with previous ambient temperature high-pressure Raman and x-ray diffraction data to create the first HPHT phase diagram of paracetamol. (paper)

  8. "Green" High-Temperature Polymers

    Science.gov (United States)

    Meador, Michael A.

    1998-01-01

    PMR-15 is a processable, high-temperature polymer developed at the NASA Lewis Research Center in the 1970's principally for aeropropulsion applications. Use of fiber-reinforced polymer matrix composites in these applications can lead to substantial weight savings, thereby leading to improved fuel economy, increased passenger and payload capacity, and better maneuverability. PMR-15 is used fairly extensively in military and commercial aircraft engines components seeing service temperatures as high as 500 F (260 C), such as the outer bypass duct for the F-404 engine. The current world-wide market for PMR-15 materials (resins, adhesives, and composites) is on the order of $6 to 10 million annually.

  9. High temperature alloys and ceramic heat exchanger

    International Nuclear Information System (INIS)

    Okamoto, Masaharu

    1984-04-01

    From the standpoint of energy saving, the future operating temperatures of process heat and gas turbine plants will become higher. For this purpose, ceramics is the most promissing candidate material in strength for application to high-temperature heat exchangers. This report deals with a servey of characteristics of several high-temperature metallic materials and ceramics as temperature-resistant materials; including a servey of the state-of-the-art of ceramic heat exchanger technologies developed outside of Japan, and a study of their application to the intermediate heat exchanger of VHTR (a very-high-temperature gas-cooled reactor). (author)

  10. Design of constant current charging power supply for J-TEXT ohmic field capacitor banks

    International Nuclear Information System (INIS)

    Lv Shudong; Zhang Ming; Rao Bo; Yu Kexun; Yang Cheng

    2014-01-01

    The charging characteristic of the capacitor charging power supply was analyzed with practical series resonant topology. The method that setting two current taps and regulating PWM switching frequency was putted forward with close loop controlling algorithm to charge the multi-group capacitor banks with constant current. A capacitor charging power supply with the max output current 6.5 A and the max output voltage 2000 V is designed. Experimental results show that, this power supply can charge the four capacitor banks to any four different voltages in 1 minute with charging accuracy less than 1%, and meet the requirements of J-TEXT ohmic field power system. (authors)

  11. High temperature superconductor accelerator magnets

    NARCIS (Netherlands)

    van Nugteren, J.

    2016-01-01

    For future particle accelerators bending dipoles are considered with magnetic fields exceeding 20T. This can only be achieved using high temperature superconductors (HTS). These exhibit different properties from classical low temperature superconductors and still require significant research and

  12. Measurements of scrape-off layer ion-to-electron temperature ratio in Tore Supra ohmic plasmas

    Czech Academy of Sciences Publication Activity Database

    Kočan, M.; Gunn, J. P.; Pascal, J.-Y.; Bonhomme, G.; Devynck, P.; Ďuran, Ivan; Gauthier, E.; Ghendrih, P.; Marandet, Y.; Pegourie, B.; Vallet, J.-C.

    390-391, - (2009), s. 1074-1077 ISSN 0022-3115. [International Conference on Plasma-Surface Interactions in Controlled Fusion Devices/18th./. Toledo, 26.05.2008-30.05. 2008] Institutional research plan: CEZ:AV0Z20430508 Keywords : Ion temperature * Electron temperature * Edge plasma * Tore Supra Subject RIV: BG - Nuclear, Atomic and Molecular Physics, Colliders Impact factor: 1.933, year: 2009

  13. Development of VHTR high temperature piping in KHI

    International Nuclear Information System (INIS)

    Suzuki, Nobuhiro; Takano, Shiro

    1981-01-01

    The high temperature pipings used for multi-purpose high temperature gas-cooled reactors are the internally insulated pipings for transporting high temperature, high pressure helium at 1000 deg C and 40 kgf/cm 2 , and the influences exerted by their performance as well as safety to the plants are very large. Kawasaki Heavy Industries, Ltd., has engaged in the development of the high temperature pipings for VHTRs for years. In this report, the progress of the development, the test carried out recently and the problems for future are described. KHI manufactured and is constructing a heater and internally insulated helium pipings for the large, high temperature structure testing loop constructed by Japan Atomic Energy Research Institute. The design concept for the high temperature pipings is to separate the temperature boundary and the pressure boundary, therefore, the double walled construction with internal heat insulation was adopted. The requirements for the high temperature pipings are to prevent natural convection, to prevent bypass flow, to minimize radiation heat transfer and to reduce heat leak through insulator supporters. The heat insulator is composed of two layers, metal laminate insulator and fiber insulator of alumina-silica. The present state of development of the high temperature pipings for VHTRs is reported. (Kako, I.)

  14. Mechanism of high-temperature resistant water-base mud

    Energy Technology Data Exchange (ETDEWEB)

    Luo, P

    1981-01-01

    Based on experiments, the causes and laws governing the changes in the performance of water-base mud under high temperature are analyzed, and the requisites and mechanism of treating agents resisting high temperature are discussed. Ways and means are sought for inhibiting, delaying and making use of the effect of high temperature on the performance of mud, while new ideas and systematic views have been expressed on the preparation of treating agents and set-up of a high temperature resistant water-base mud system. High temperature dispersion and high temperature surface inactivation of clay in the mud, as well as their effect and method of utilization are reviewed. Subjects also touched upon include degradation and cross-linking of the high-temperature resistant treating agents, their use and effect. Based on the above, the preparation of a water-base and system capable of resisting 180 to 250/sup 0/C is recommended.

  15. CDSD-4000: High-resolution, high-temperature carbon dioxide spectroscopic databank

    International Nuclear Information System (INIS)

    Tashkun, S.A.; Perevalov, V.I.

    2011-01-01

    We present a high-resolution, high-temperature version of the Carbon Dioxide Spectroscopic Databank called CDSD-4000. The databank contains the line parameters (positions, intensities, air- and self-broadened half-widths, coefficients of temperature dependence of air- and self-broadened half-widths, and air-broadened pressure shifts) of the four most abundant isotopologues of CO 2 . A reference temperature is 296 K and an intensity cutoff is 10 -27 cm -1 /molecule cm -2 at 4000 K. The databank has 628,324,454 entries, covers the 226-8310 cm -1 spectral range and designed for the temperature range 2500-5000 K. Format of CDSD-4000 is similar to that of HITRAN-2008. The databank has been generated within the framework of the method of effective operators and based on the global fittings of spectroscopic parameters (parameters of the effective Hamiltonians and effective dipole moment operators) to observed data collected from the literature. The databank is useful for studying high-temperature radiative properties of CO 2 , including exoplanets atmospheres, aerothemal modeling for Mars entry missions, high-temperature laboratory spectra, and industrial applications. CDSD-4000 is freely accessible via the Internet site (ftp://ftp.iao.ru/pub/CDSD-4000).

  16. Gasification of high ash, high ash fusion temperature bituminous coals

    Science.gov (United States)

    Liu, Guohai; Vimalchand, Pannalal; Peng, WanWang

    2015-11-13

    This invention relates to gasification of high ash bituminous coals that have high ash fusion temperatures. The ash content can be in 15 to 45 weight percent range and ash fusion temperatures can be in 1150.degree. C. to 1500.degree. C. range as well as in excess of 1500.degree. C. In a preferred embodiment, such coals are dealt with a two stage gasification process--a relatively low temperature primary gasification step in a circulating fluidized bed transport gasifier followed by a high temperature partial oxidation step of residual char carbon and small quantities of tar. The system to process such coals further includes an internally circulating fluidized bed to effectively cool the high temperature syngas with the aid of an inert media and without the syngas contacting the heat transfer surfaces. A cyclone downstream of the syngas cooler, operating at relatively low temperatures, effectively reduces loading to a dust filtration unit. Nearly dust- and tar-free syngas for chemicals production or power generation and with over 90%, and preferably over about 98%, overall carbon conversion can be achieved with the preferred process, apparatus and methods outlined in this invention.

  17. High-temperature superconducting conductors and cables

    International Nuclear Information System (INIS)

    Peterson, D.E.; Maley, M.P.; Boulaevskii, L.; Willis, J.O.; Coulter, J.Y.; Ullmann, J.L.; Cho, Jin; Fleshler, S.

    1996-01-01

    This is the final report of a 3-year LDRD project at LANL. High-temperature superconductivity (HTS) promises more efficient and powerful electrical devices such as motors, generators, and power transmission cables; however this depends on developing HTS conductors that sustain high current densities J c in high magnetic fields at temperatures near liq. N2's bp. Our early work concentrated on Cu oxides but at present, long wire and tape conductors can be best made from BSCCO compounds with high J c at low temperatures, but which are degraded severely at temperatures of interest. This problem is associated with thermally activated motion of magnetic flux lines in BSCCO. Reducing these dc losses at higher temperatures will require a high density of microscopic defects that will pin flux lines and inhibit their motion. Recently it was shown that optimum defects can be produced by small tracks formed by passage of energetic heavy ions. Such defects result when Bi is bombarded with high energy protons. The longer range of protons in matter suggests the possibility of application to tape conductors. AC losses are a major limitation in many applications of superconductivity such as power transmission. The improved pinning of flux lines reduces ac losses, but optimization also involves other factors. Measuring and characterizing these losses with respect to material parameters and conductor design is essential to successful development of ac devices

  18. Technology development for high temperature logging tools

    Energy Technology Data Exchange (ETDEWEB)

    Veneruso, A.F.; Coquat, J.A.

    1979-01-01

    A set of prototype, high temperature logging tools (temperature, pressure and flow) were tested successfully to temperatures up to 275/sup 0/C in a Union geothermal well during November 1978 as part of the Geothermal Logging Instrumentation Development Program. This program is being conducted by Sandia Laboratories for the Department of Energy's Division of Geothermal Energy. The progress and plans of this industry based program to develop and apply the high temperature instrumentation technology needed to make reliable geothermal borehole measurements are described. Specifically, this program is upgrading existing sondes for improved high temperature performance, as well as applying new materials (elastomers, polymers, metals and ceramics) and developing component technology such as high temperature cables, cableheads and electronics to make borehole measurements such as formation temperature, flow rate, high resolution pressure and fracture mapping. In order to satisfy critical existing needs, the near term goal is for operation up to 275/sup 0/C and 7000 psi by the end of FY80. The long term goal is for operation up to 350/sup 0/C and 20,000 psi by the end of FY84.

  19. High-power neutral-beam heating in the adiabatic toroidal compressor

    International Nuclear Information System (INIS)

    Ellis, R.A.; Eubank, H.P.; Goldston, R.; Smith, R.R.; Nagashima, T.

    1976-05-01

    Neutral-beam injection experiments on ATC have resulted in net power deposited in the plasma of up to 230 kW. The power deposited in the plasma ions is large compared to that from ohmic heating. For a variety of beam and plasma ion species, the increase in ion temperature is proportional to beam power

  20. Dynamic High-Temperature Characterization of an Iridium Alloy in Compression at High Strain Rates

    Energy Technology Data Exchange (ETDEWEB)

    Song, Bo [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Experimental Environment Simulation Dept.; Nelson, Kevin [Sandia National Lab. (SNL-CA), Livermore, CA (United States). Mechanics of Materials Dept.; Lipinski, Ronald J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Advanced Nuclear Fuel Cycle Technology Dept.; Bignell, John L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States). Structural and Thermal Analysis Dept.; Ulrich, G. B. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Radioisotope Power Systems Program; George, E. P. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Radioisotope Power Systems Program

    2014-06-01

    Iridium alloys have superior strength and ductility at elevated temperatures, making them useful as structural materials for certain high-temperature applications. However, experimental data on their high-temperature high-strain-rate performance are needed for understanding high-speed impacts in severe elevated-temperature environments. Kolsky bars (also called split Hopkinson bars) have been extensively employed for high-strain-rate characterization of materials at room temperature, but it has been challenging to adapt them for the measurement of dynamic properties at high temperatures. Current high-temperature Kolsky compression bar techniques are not capable of obtaining satisfactory high-temperature high-strain-rate stress-strain response of thin iridium specimens investigated in this study. We analyzed the difficulties encountered in high-temperature Kolsky compression bar testing of thin iridium alloy specimens. Appropriate modifications were made to the current high-temperature Kolsky compression bar technique to obtain reliable compressive stress-strain response of an iridium alloy at high strain rates (300 – 10000 s-1) and temperatures (750°C and 1030°C). Uncertainties in such high-temperature high-strain-rate experiments on thin iridium specimens were also analyzed. The compressive stress-strain response of the iridium alloy showed significant sensitivity to strain rate and temperature.

  1. High Temperature Electrolysis

    DEFF Research Database (Denmark)

    Elder, Rachael; Cumming, Denis; Mogensen, Mogens Bjerg

    2015-01-01

    High temperature electrolysis of carbon dioxide, or co-electrolysis of carbon dioxide and steam, has a great potential for carbon dioxide utilisation. A solid oxide electrolysis cell (SOEC), operating between 500 and 900. °C, is used to reduce carbon dioxide to carbon monoxide. If steam is also i...

  2. High temperature mechanical properties of iron aluminides

    International Nuclear Information System (INIS)

    Morris, D. G.; Munoz-Morris, M. A.

    2001-01-01

    Considerable attention has been given to the iron aluminide family of intermetallics over the past years since they offer considerable potential as engineering materials for intermediate to high temperature applications, particularly in cases where extreme oxidation or corrosion resistance is required. Despite efforts at alloy development, however, high temperature strength remains low and creep resistance poor. Reasons for the poor high-temperature strength of iron aluminides will be discussed, based on the ordered crystal structure, the dislocation structure found in the materials, and the mechanisms of dislocation pinning operating. Alternative ways of improving high temperature strength by microstructural modification and the inclusion of second phase particles will also be considered. (Author)

  3. Density limit in FTU tokamak during Ohmic operation

    International Nuclear Information System (INIS)

    Frigione, D.; Pieroni, L.

    1993-01-01

    The understanding of the physical mechanisms that regulate the density limit in a Tokamak is very important in view of a future fusion reactor. On one hand density enters as a factor in the figure of merit needed to achieve a burning plasma, and on the other hand a high edge density is a prerequisite for avoiding excessive erosion of the first walls and to limit the impurity influx into the hot plasma core. Furthermore a reactor should work in a safe zone of the operation parameters in order to avoid disruptive instabilities. The density limit problem has been tackled since the 70's, but so far a unique physics picture has not still emerged. In the last few years, due to the availability of better diagnostics, especially for the plasma edge, the use of pellet injectors to fuel the plasma and the experience gained on many different Tokamak, a consensus has been reached on the edge density as the real parameter responsible for the density limit. There are still two main mechanisms invoked to explain this limit: one refers to the power balance between the heat conducted and/or convected across the plasma radius and the power lost by impurity line radiation at the edge. When the latter overcomes the former, shrinking of the current channel occurs, which leads to instabilities due to tearing modes (usually the m/n=2/1) and then to disruption. The other explanation, for now valid for divertor machines, is based on the particle and energy balance in the scrape off layer (SOL). The limit in the edge density is then associated with the thermal collapse of the divertor plasma. In this work we describe the experiments on the density limit in FTU with Ohmic heating, the reason why we also believe that the limit is on the edge density, and discuss its relation to a simple model based on the SOL power balance valid for a limiter Tokamak. (author) 7 refs., 4 figs

  4. Contribution to high-temperature chromatography and high-temperature-gas-chromatography-mass spectrometry of lipids

    International Nuclear Information System (INIS)

    Aichholz, R.

    1998-04-01

    This thesis describes the use of high temperature gas chromatography for the investigation of unusual triacylglycerols, cyanolipids and bees waxes. The used glass capillary columns were pretreated and coated with tailor made synthesized high temperature stable polysiloxane phases. The selective separation properties of the individual columns were tested with a synthetic lipid mixture. Suitable derivatization procedures for the gaschromatographic analyses of neutral lipids, containing multiple bonds as well as hydroxy-, epoxy-, and carboxyl groups, were developed and optimized. Therefore conjugated olefinic-, conjugated olefinic-acetylenic-, hydroxy-, epoxy-, and conjugated olefinic keto triacylglycerols in miscellaneous plant seed oils as well as hydroxy monoesters, diesters and hydroxy diesters in bees waxes could be analysed directly with high temperature gas chromatography for the first time. In order to elucidate the structures of separated lipid compounds, high temperature gas chromatography was coupled to mass spectrometry and tandem mass spectrometry, respectively. Comparable analytical systems are hitherto not commercial available. Therefore instrumental prerequisites for a comprehensive and detailed analysis of seed oils and bees waxes were established. In GC/MS commonly two ionization methods are used, electron impact ionization and chemical ionization. For the analysis of lipids the first is of limited use only. Due to intensive fragmentation only weak molecular ions are observed. In contrast, the chemical ionization yields in better results. Dominant quasi molecular ions enable an unambiguous determination of the molecular weight. Moreover, characteristic fragment ions provide important indications of certain structural features of the examined compounds. Nevertheless, in some cases the chromatographic resolution was insufficient in order to separate all compounds present in natural lipid mixtures. Owing to the selected detection with mass spectrometry

  5. High-Temperature-High-Volume Lifting for Enhanced Geothermal Systems

    Energy Technology Data Exchange (ETDEWEB)

    Turnquist, Norman [GE Global Research, Munchen (Germany); Qi, Xuele [GE Global Research, Munchen (Germany); Raminosoa, Tsarafidy [GE Global Research, Munchen (Germany); Salas, Ken [GE Global Research, Munchen (Germany); Samudrala, Omprakash [GE Global Research, Munchen (Germany); Shah, Manoj [GE Global Research, Munchen (Germany); Van Dam, Jeremy [GE Global Research, Munchen (Germany); Yin, Weijun [GE Global Research, Munchen (Germany); Zia, Jalal [GE Global Research, Munchen (Germany)

    2013-12-20

    This report summarizes the progress made during the April 01, 2010 – December 30, 2013 period under Cooperative Agreement DE-EE0002752 for the U.S. Department of Energy entitled “High-Temperature-High-Volume Lifting for Enhanced Geothermal Systems.” The overall objective of this program is to advance the technology for well fluids lifting systems to meet the foreseeable pressure, temperature, and longevity needs of the Enhanced Geothermal Systems (EGS) industry for the coming ten years. In this program, lifting system requirements for EGS wells were established via consultation with industry experts and site visits. A number of artificial lift technologies were evaluated with regard to their applicability to EGS applications; it was determined that a system based on electric submersible pump (ESP) technology was best suited to EGS. Technical barriers were identified and a component-level technology development program was undertaken to address each barrier, with the most challenging being the development of a power-dense, small diameter motor that can operate reliably in a 300°C environment for up to three years. Some of the targeted individual component technologies include permanent magnet motor construction, high-temperature insulation, dielectrics, bearings, seals, thrust washers, and pump impellers/diffusers. Advances were also made in thermal management of electric motors. In addition to the overall system design for a full-scale EGS application, a subscale prototype was designed and fabricated. Like the full-scale design, the subscale prototype features a novel “flow-through-the-bore” permanent magnet electric motor that combines the use of high temperature materials with an internal cooling scheme that limits peak internal temperatures to <330°C. While the full-scale high-volume multi-stage pump is designed to lift up to 80 kg/s of process water, the subscale prototype is based on a production design that can pump 20 kg/s and has been modified

  6. First high-temperature electronics products survey 2005.

    Energy Technology Data Exchange (ETDEWEB)

    Normann, Randy Allen

    2006-04-01

    On April 4-5, 2005, a High-Temperature Electronics Products Workshop was held. This workshop engaged a number of governmental and private industry organizations sharing a common interest in the development of commercially available, high-temperature electronics. One of the outcomes of this meeting was an agreement to conduct an industry survey of high-temperature applications. This report covers the basic results of this survey.

  7. Transient snakes in an ohmic plasma associated with a minor disruption in the HT-7 Tokamak

    Energy Technology Data Exchange (ETDEWEB)

    Mao, Songtao; Xu, Liqing; Hu, Liqun; Chen, Kaiyun [Chinese Academy of Sciences, Hefei (China)

    2014-05-15

    A transient burst (∼2 ms, an order of the fast-particle slowdown timescale) of a spontaneous snake is observed for the first time in a HT-7 heavy impurity ohmic plasma. The features of the low-Z impurity snake are presented. The flatten electron profile due to the heavy impurity reveals the formation of a large magnetic island. The foot of the impurity accumulation is consistent with the location of the transient snake. The strong frequency-chirping behaviors and the spatial structures of the snake are also presented.

  8. Transport mechanisms in low-resistance ohmic contacts to p-InP formed by rapid thermal annealing

    DEFF Research Database (Denmark)

    Clausen, Thomas; Leistiko, Otto

    1993-01-01

    process is related to interdiffusion and compound formation between the metal elements and the InP. The onset of low specific contact resistance is characterized by a change in the dominant transport mechanism; from predominantly a combination of thermionic emission and field emission to purely thermionic......Thermionic emission across a very small effective Schottky barrier (0-0.2 eV) are reported as being the dominant transport process mechanism in very low-resistance ohmic contacts for conventional AuZn(Ni) metallization systems top-InP formed by rapid thermal annealing. The barrier modulation...

  9. Deformation of high-temperature superconductors

    International Nuclear Information System (INIS)

    Goretta, K.C.; Routbort, J.L.; Miller, D.J.; Chen, N.; Dominguez-Rodriguez, A.; Jimenez-Melendo, M.; De Arellano-Lopez, A.R.

    1994-08-01

    Of the many families of high-temperature superconductors, only the properties of those discovered prior to 1989 - Y-Ba-Cu-O, Tl-Ba(Sr)-Ca-Cu-O, and Bi(Pb)-Sr-Ca-Cu-O - have been studied extensively. Deformation tests have been performed on YBa 2 Cu 3 O x (Y-123), YBa 2 Cu 4 O x (Y-124), TlBa 2 Ca 2 Cu 3 O x (Bi-2223). The tests have revealed that plasticity is generally limited in these compounds and that the rate-controlling diffusional kinetics for creep are very slow. Nevertheless, hot forming has proved to be quite successful for fabrication of bulk high-temperature superconductors, so long as deformation rates are low or large hydrostatic stresses are applied. Steady-state creep data have proved to be useful in designing optimal heat treatments for superconductors and in support of more-fundamental diffusion experiments. The high-temperature superconductors are highly complex oxides, and it is a challenge to understand their deformation responses. In this paper, results of interest and operant creep mechanisms will be reviewed

  10. NSTX High Temperature Sensor Systems

    International Nuclear Information System (INIS)

    McCormack, B.; Kugel, H.W.; Goranson, P.; Kaita, R.

    1999-01-01

    The design of the more than 300 in-vessel sensor systems for the National Spherical Torus Experiment (NSTX) has encountered several challenging fusion reactor diagnostic issues involving high temperatures and space constraints. This has resulted in unique miniature, high temperature in-vessel sensor systems mounted in small spaces behind plasma facing armor tiles, and they are prototypical of possible high power reactor first-wall applications. In the Center Stack, Divertor, Passive Plate, and vessel wall regions, the small magnetic sensors, large magnetic sensors, flux loops, Rogowski Coils, thermocouples, and Langmuir Probes are qualified for 600 degrees C operation. This rating will accommodate both peak rear-face graphite tile temperatures during operations and the 350 degrees C bake-out conditions. Similar sensor systems including flux loops, on other vacuum vessel regions are qualified for 350 degrees C operation. Cabling from the sensors embedded in the graphite tiles follows narrow routes to exit the vessel. The detailed sensor design and installation methods of these diagnostic systems developed for high-powered ST operation are discussed

  11. On high temperature strength of carbon steels

    International Nuclear Information System (INIS)

    Ichinose, Hiroyuki; Tamura, Manabu; Kanero, Takahiro; Ihara, Yoshihito

    1977-01-01

    In the steels for high temperature use, the oxidation resistance is regarded as important, but carbon steels show enough oxidation resistance to be used continuously at the temperature up to 500 deg. C if the strength is left out of consideration, and up to 450 deg. C even when the strength is taken into account. Moreover, the production is easy, the workability and weldability are good, and the price is cheap in carbon steels as compared with alloy steels. In the boilers for large thermal power stations, 0.15-0.30% C steels are used for reheater tubes, main feed water tubes, steam headers, wall water tubes, economizer tubes, bypass pipings and others, and they account for 70% of all steel materials used for the boilers of 350 MW class and 30% in 1000 MW class. The JIS standard for the carbon steels for high temperature use and the related standards in foreign countries are shown. The high temperature strength of carbon steels changes according to the trace elements, melting and heat treatment as well as the main compositions of C, Si and Mn. Al and N affect the high temperature strength largely. The characteristics of carbon steels after the heating for hours, the factors controlling the microstructure and high temperature strength, and the measures to improve the high temperature strength of carbon steels are explained. (Kako, I.)

  12. Nuclear fuels for very high temperature applications

    International Nuclear Information System (INIS)

    Lundberg, L.B.; Hobbins, R.R.

    1992-01-01

    The success of the development of nuclear thermal propulsion devices and thermionic space nuclear power generation systems depends on the successful utilization of nuclear fuel materials at temperatures in the range 2000 to 3500 K. Problems associated with the utilization of uranium bearing fuel materials at these very high temperatures while maintaining them in the solid state for the required operating times are addressed. The critical issues addressed include evaporation, melting, reactor neutron spectrum, high temperature chemical stability, fabrication, fission induced swelling, fission product release, high temperature creep, thermal shock resistance, and fuel density, both mass and fissile atom. Candidate fuel materials for this temperature range are based on UO 2 or uranium carbides. Evaporation suppression, such as a sealed cladding, is required for either fuel base. Nuclear performance data needed for design are sparse for all candidate fuel forms in this temperature range, especially at the higher temperatures

  13. Close-Spaced High Temperature Knudsen Flow.

    Science.gov (United States)

    1986-07-15

    radiant heat source assembly was substituted for the brazed molybdenum one in order to achieve higher radiant heater temperatures . 2.1.4 Experimental...at very high temperature , and ground flat. The molybdenum is then chemically etched to the desired depth using an etchant which does not affect...RiB6 295 -CLSE PCED HIGH TEMPERATURE KNUDSEN FLOU(U) RASOR I AiASSOCIATES INC SUNNYVALE CA J 8 MCVEY 15 JUL 86 NSR-224 AFOSR-TR-87-1258 F49628-83-C

  14. Development of High Temperature/High Sensitivity Novel Chemical Resistive Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chunrui [Univ. of Texas, San Antonio, TX (United States); Enriquez, Erik [Univ. of Texas, San Antonio, TX (United States); Wang, Haibing [Univ. of Texas, San Antonio, TX (United States); Xu, Xing [Univ. of Texas, San Antonio, TX (United States); Bao, Shangyong [Univ. of Texas, San Antonio, TX (United States); Collins, Gregory [Univ. of Texas, San Antonio, TX (United States)

    2013-08-13

    The research has been focused to design, fabricate, and develop high temperature/high sensitivity novel multifunctional chemical sensors for the selective detection of fossil energy gases used in power and fuel systems. By systematically studying the physical properties of the LnBaCo2O5+d (LBCO) [Ln=Pr or La] thin-films, a new concept chemical sensor based high temperature chemical resistant change has been developed for the application for the next generation highly efficient and near zero emission power generation technologies. We also discovered that the superfast chemical dynamic behavior and an ultrafast surface exchange kinetics in the highly epitaxial LBCO thin films. Furthermore, our research indicates that hydrogen can superfast diffuse in the ordered oxygen vacancy structures in the highly epitaxial LBCO thin films, which suggest that the LBCO thin film not only can be an excellent candidate for the fabrication of high temperature ultra sensitive chemical sensors and control systems for power and fuel monitoring systems, but also can be an excellent candidate for the low temperature solid oxide fuel cell anode and cathode materials.

  15. High temperature and high pressure equation of state of gold

    International Nuclear Information System (INIS)

    Matsui, Masanori

    2010-01-01

    High-temperature and high-pressure equation of state (EOS) of Au has been developed using measured data from shock compression up to 240 GPa, volume thermal expansion between 100 and 1300 K and 0 GPa, and temperature dependence of bulk modulus at 0 GPa from ultrasonic measurements. The lattice thermal pressures at high temperatures have been estimated based on the Mie-Grueneisen-Debye type treatment with the Vinet isothermal EOS. The contribution of electronic thermal pressure at high temperatures, which is relatively insignificant for Au, has also been included here. The optimized EOS parameters are K' 0T = 6.0 and q = 1.6 with fixed K 0T = 167 GPa, γ 0 = 2.97, and Θ 0 = 170 K from previous investigations. We propose the present EOS to be used as a reliable pressure standard for static experiments up to 3000K and 300 GPa.

  16. 1981 Annual status report. High-temperature materials

    International Nuclear Information System (INIS)

    1981-01-01

    The high temperature materials programme is executed at the JRC, Petten Establishment and has for the 1980/83 programme period the objective to promote within the European Community the development of high temperature materials required for future energy technologies. A range of engineering studies is being carried out. A data bank storing factual data on alloys for high temperature applications is being developed and has reached the operational phase

  17. 1982 Annual status report: high-temperature materials

    International Nuclear Information System (INIS)

    Van de Voorde, M.

    1983-01-01

    The High Temperature Materials Programme is executed at the JRC, Petten Establishment and has for the 1980/83 programme period the objective to promote within the European Community the development of high temperature materials required for future energy technologies. Materials and engineering studies include: corrosion with or without load, mechanical properties under static or dynamic loads, surface protection creep of tubular components in corrosive environments and high temperature materials data bank

  18. Double-layer rotor magnetic shield performance analysis in high temperature superconducting synchronous generators under short circuit fault conditions

    Science.gov (United States)

    Hekmati, Arsalan; Aliahmadi, Mehdi

    2016-12-01

    High temperature superconducting, HTS, synchronous machines benefit from a rotor magnetic shield in order to protect superconducting coils against asynchronous magnetic fields. This magnetic shield, however, suffers from exerted Lorentz forces generated in light of induced eddy currents during transient conditions, e.g. stator windings short-circuit fault. In addition, to the exerted electromagnetic forces, eddy current losses and the associated effects on the cryogenic system are the other consequences of shielding HTS coils. This study aims at investigating the Rotor Magnetic Shield, RMS, performance in HTS synchronous generators under stator winding short-circuit fault conditions. The induced eddy currents in different circumferential positions of the rotor magnetic shield along with associated Joule heating losses would be studied using 2-D time-stepping Finite Element Analysis, FEA. The investigation of Lorentz forces exerted on the magnetic shield during transient conditions has also been performed in this paper. The obtained results show that double line-to-ground fault is of the most importance among different types of short-circuit faults. It was revealed that when it comes to the design of the rotor magnetic shields, in addition to the eddy current distribution and the associated ohmic losses, two phase-to-ground fault should be taken into account since the produced electromagnetic forces in the time of fault conditions are more severe during double line-to-ground fault.

  19. High pressure study of high-temperature superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Souliou, Sofia-Michaela

    2014-09-29

    The current thesis studies experimentally the effect of high external pressure on high-T{sub c} superconductors. The structure and lattice dynamics of several members of the high-T{sub c} cuprate and Fe-based superconductors families were investigated by means of Raman spectroscopy and X-ray diffraction under well-controlled, hydrostatic high pressure and low temperature conditions. The lattice dynamics of the high-T{sub c} superconductor YBa{sub 2}Cu{sub 3}O{sub 6+x} have been investigated systematically by Raman spectroscopy as a function of doping (x = 0.95, 0.75, 0.60, 0.55, and 0.45) and external pressure. Under ambient pressure conditions, in addition to the Raman modes expected from group theory, we observe new Raman active phonons upon cooling the underdoped samples, at temperatures well above the superconducting transition temperature. The doping dependence and the onset temperatures of the new Raman features suggest that they are associated with the incommensurate charge density wave (CDW) state recently discovered in underdoped cuprates using synchrotron X-ray scattering techniques. Under high pressure conditions (from 2 to 12 GPa), our Raman measurements on highly ordered underdoped YBa{sub 2}Cu{sub 3}O{sub 6.55} samples do not show any of the new Raman phonons seen at ambient pressure. High pressure and low temperature Raman measurements have been performed on the underdoped superconductor YBa{sub 2}Cu{sub 4}O{sub 8}. A clear renormalization of some of the Raman phonons is seen below T{sub c} as a result of the changes in the phonon self-energy upon the opening of the superconducting gap, with the most prominent one being that of the B{sub 1g}-like buckling phonon mode. The amplitude of this renormalization strongly increases with pressure, resembling the effect of hole doping in YBa{sub 2}Cu{sub 3}O{sub 6+x}. At ∝ 10 GPa, the system undergoes a reversible pressure-induced structural phase transition to a non-centrosymmmetric structure (space group

  20. High pressure study of high-temperature superconductors

    International Nuclear Information System (INIS)

    Souliou, Sofia-Michaela

    2014-01-01

    The current thesis studies experimentally the effect of high external pressure on high-T c superconductors. The structure and lattice dynamics of several members of the high-T c cuprate and Fe-based superconductors families were investigated by means of Raman spectroscopy and X-ray diffraction under well-controlled, hydrostatic high pressure and low temperature conditions. The lattice dynamics of the high-T c superconductor YBa 2 Cu 3 O 6+x have been investigated systematically by Raman spectroscopy as a function of doping (x = 0.95, 0.75, 0.60, 0.55, and 0.45) and external pressure. Under ambient pressure conditions, in addition to the Raman modes expected from group theory, we observe new Raman active phonons upon cooling the underdoped samples, at temperatures well above the superconducting transition temperature. The doping dependence and the onset temperatures of the new Raman features suggest that they are associated with the incommensurate charge density wave (CDW) state recently discovered in underdoped cuprates using synchrotron X-ray scattering techniques. Under high pressure conditions (from 2 to 12 GPa), our Raman measurements on highly ordered underdoped YBa 2 Cu 3 O 6.55 samples do not show any of the new Raman phonons seen at ambient pressure. High pressure and low temperature Raman measurements have been performed on the underdoped superconductor YBa 2 Cu 4 O 8 . A clear renormalization of some of the Raman phonons is seen below T c as a result of the changes in the phonon self-energy upon the opening of the superconducting gap, with the most prominent one being that of the B 1g -like buckling phonon mode. The amplitude of this renormalization strongly increases with pressure, resembling the effect of hole doping in YBa 2 Cu 3 O 6+x . At ∝ 10 GPa, the system undergoes a reversible pressure-induced structural phase transition to a non-centrosymmmetric structure (space group Imm2). The structural transition is clearly reflected in the high pressure

  1. Application of High Temperature Superconductors to Accelerators

    CERN Document Server

    Ballarino, A

    2000-01-01

    Since the discovery of high temperature superconductivity, a large effort has been made by the scientific community to investigate this field towards a possible application of the new oxide superconductors to different devices like SMES, magnetic bearings, flywheels energy storage, magnetic shielding, transmission cables, fault current limiters, etc. However, all present day large scale applications using superconductivity in accelerator technology are based on conventional materials operating at liquid helium temperatures. Poor mechanical properties, low critical current density and sensitivity to the magnetic field at high temperature are the key parameters whose improvement is essential for a large scale application of high temperature superconductors to such devices. Current leads, used for transferring currents from the power converters, working at room temperature, into the liquid helium environment, where the magnets are operating, represent an immediate application of the emerging technology of high t...

  2. High-temperature flaw assessment procedure

    International Nuclear Information System (INIS)

    Ruggles, M.B.; Takahashi, Y.; Ainsworth, R.A.

    1989-08-01

    The current program represents a joint effort between the Electric Power Research Institute (EPRI) in the USA, the Central Research Institute of Electric Power Industry (CRIEPI) in Japan, and the Central Electricity Generating Board (CEGB) in the UK. The goal is to develop an interim high-temperature flaw assessment procedure for high-temperature reactor components. This is to be accomplished through exploratory experimental and analytical studies of high-temperature crack growth. The state-of-the-art assessment and the fracture mechanics database for both types 304 and 316 stainless steels, completed in 1988, serve as a foundation for the present work. Work in the three participating organizations is progressing roughly on schedule. Results to-date are presented in this document. Fundamental tests results are discussed in Section 2. Section 3 focuses on results of exploratory subcritical crack growth tests. Progress in subcritical crack growth modeling is reported in Section 4. Exploratory failure tests are outlined in Section 5. 21 refs., 70 figs., 7 tabs

  3. High-temperature ductility of electro-deposited nickel

    Science.gov (United States)

    Dini, J. W.; Johnson, H. R.

    1977-01-01

    Work done during the past several months on high temperature ductility of electrodeposited nickel is summarized. Data are presented which show that earlier measurements made at NASA-Langley erred on the low side, that strain rate has a marked influence on high temperature ductility, and that codeposition of a small amount of manganese helps to improve high temperature ductility. Influences of a number of other factors on nickel properties were also investigated. They included plating solution temperature, current density, agitation, and elimination of the wetting agent from the plating solution. Repair of a large nozzle section by nickel plating is described.

  4. High temperature materials characterization

    Science.gov (United States)

    Workman, Gary L.

    1990-01-01

    A lab facility for measuring elastic moduli up to 1700 C was constructed and delivered. It was shown that the ultrasonic method can be used to determine elastic constants of materials from room temperature to their melting points. The ease in coupling high frequency acoustic energy is still a difficult task. Even now, new coupling materials and higher power ultrasonic pulsers are being suggested. The surface was only scratched in terms of showing the full capabilities of either technique used, especially since there is such a large learning curve in developing proper methodologies to take measurements into the high temperature region. The laser acoustic system does not seem to have sufficient precision at this time to replace the normal buffer rod methodology.

  5. The High Temperature Tensile and Creep Behaviors of High Entropy Superalloy.

    Science.gov (United States)

    Tsao, Te-Kang; Yeh, An-Chou; Kuo, Chen-Ming; Kakehi, Koji; Murakami, Hideyuki; Yeh, Jien-Wei; Jian, Sheng-Rui

    2017-10-04

    This article presents the high temperature tensile and creep behaviors of a novel high entropy alloy (HEA). The microstructure of this HEA resembles that of advanced superalloys with a high entropy FCC matrix and L1 2 ordered precipitates, so it is also named as "high entropy superalloy (HESA)". The tensile yield strengths of HESA surpass those of the reported HEAs from room temperature to elevated temperatures; furthermore, its creep resistance at 982 °C can be compared to those of some Ni-based superalloys. Analysis on experimental results indicate that HESA could be strengthened by the low stacking-fault energy of the matrix, high anti-phase boundary energy of the strengthening precipitate, and thermally stable microstructure. Positive misfit between FCC matrix and precipitate has yielded parallel raft microstructure during creep at 982 °C, and the creep curves of HESA were dominated by tertiary creep behavior. To the best of authors' knowledge, this article is the first to present the elevated temperature tensile creep study on full scale specimens of a high entropy alloy, and the potential of HESA for high temperature structural application is discussed.

  6. High transition temperature superconducting integrated circuit

    International Nuclear Information System (INIS)

    DiIorio, M.S.

    1985-01-01

    This thesis describes the design and fabrication of the first superconducting integrated circuit capable of operating at over 10K. The primary component of the circuit is a dc SQUID (Superconducting QUantum Interference Device) which is extremely sensitive to magnetic fields. The dc SQUID consists of two superconductor-normal metal-superconductor (SNS) Josephson microbridges that are fabricated using a novel step-edge process which permits the use of high transition temperature superconductors. By utilizing electron-beam lithography in conjunction with ion-beam etching, very small microbridges can be produced. Such microbridges lead to high performance dc SQUIDs with products of the critical current and normal resistance reaching 1 mV at 4.2 K. These SQUIDs have been extensively characterized, and exhibit excellent electrical characteristics over a wide temperature range. In order to couple electrical signals into the SQUID in a practical fashion, a planar input coil was integrated for efficient coupling. A process was developed to incorporate the technologically important high transition temperature superconducting materials, Nb-Sn and Nb-Ge, using integrated circuit techniques. The primary obstacles were presented by the metallurgical idiosyncrasies of the various materials, such as the need to deposit the superconductors at elevated temperatures, 800-900 0 C, in order to achieve a high transition temperature

  7. High temperature corrosion in gasifiers

    Directory of Open Access Journals (Sweden)

    Bakker Wate

    2004-01-01

    Full Text Available Several commercial scale coal gasification combined cycle power plants have been built and successfully operated during the last 5-10 years. Supporting research on materials of construction has been carried out for the last 20 years by EPRI and others. Emphasis was on metallic alloys for heat exchangers and other components in contact with hot corrosive gases at high temperatures. In this paper major high temperature corrosion mechanisms, materials performance in presently operating gasifiers and future research needs will be discussed.

  8. HYFIRE: fusion-high temperature electrolysis system

    International Nuclear Information System (INIS)

    Fillo, J.A.; Powell, J.R.; Steinberg, M.; Benenati, R.; Dang, V.D.; Horn, F.; Isaacs, H.; Lazareth, O.; Makowitz, H.; Usher, J.

    1980-01-01

    The Brookhaven National Laboratory (BNL) is carrying out a comprehensive conceptual design study called HYFIRE of a commercial fusion Tokamak reactor, high-temperature electrolysis system. The study is placing particular emphasis on the adaptability of the STARFIRE power reactor to a synfuel application. The HYFIRE blanket must perform three functions: (a) provide high-temperature (approx. 1400 0 C) process steam at moderate pressures (in the range of 10 to 30 atm) to the high-temperature electrolysis (HTE) units; (b) provide high-temperature (approx. 700 to 800 0 C) heat to a thermal power cycle for generation of electricity to the HTE units; and (c) breed enough tritium to sustain the D-T fuel cycle. In addition to thermal energy for the decomposition of steam into its constitutents, H 2 and O 2 , electrical input is required. Power cycle efficiencies of approx. 40% require He cooling for steam superheat. Fourteen hundred degree steam coupled with 40% power cycle efficiency results in a process efficiency (conversion of fusion energy to hydrogen chemical energy) of 50%

  9. High temperature structural sandwich panels

    Science.gov (United States)

    Papakonstantinou, Christos G.

    High strength composites are being used for making lightweight structural panels that are being employed in aerospace, naval and automotive structures. Recently, there is renewed interest in use of these panels. The major problem of most commercial available sandwich panels is the fire resistance. A recently developed inorganic matrix is investigated for use in cases where fire and high temperature resistance are necessary. The focus of this dissertation is the development of a fireproof composite structural system. Sandwich panels made with polysialate matrices have an excellent potential for use in applications where exposure to high temperatures or fire is a concern. Commercial available sandwich panels will soften and lose nearly all of their compressive strength temperatures lower than 400°C. This dissertation consists of the state of the art, the experimental investigation and the analytical modeling. The state of the art covers the performance of existing high temperature composites, sandwich panels and reinforced concrete beams strengthened with Fiber Reinforced Polymers (FRP). The experimental part consists of four major components: (i) Development of a fireproof syntactic foam with maximum specific strength, (ii) Development of a lightweight syntactic foam based on polystyrene spheres, (iii) Development of the composite system for the skins. The variables are the skin thickness, modulus of elasticity of skin and high temperature resistance, and (iv) Experimental evaluation of the flexural behavior of sandwich panels. Analytical modeling consists of a model for the flexural behavior of lightweight sandwich panels, and a model for deflection calculations of reinforced concrete beams strengthened with FRP subjected to fatigue loading. The experimental and analytical results show that sandwich panels made with polysialate matrices and ceramic spheres do not lose their load bearing capability during severe fire exposure, where temperatures reach several

  10. A novel SOI pressure sensor for high temperature application

    International Nuclear Information System (INIS)

    Li Sainan; Liang Ting; Wang Wei; Hong Yingping; Zheng Tingli; Xiong Jijun

    2015-01-01

    The silicon on insulator (SOI) high temperature pressure sensor is a novel pressure sensor with high-performance and high-quality. A structure of a SOI high-temperature pressure sensor is presented in this paper. The key factors including doping concentration and power are analyzed. The process of the sensor is designed with the critical process parameters set appropriately. The test result at room temperature and high temperature shows that nonlinear error below is 0.1%, and hysteresis is less than 0.5%. High temperature measuring results show that the sensor can be used for from room temperature to 350 °C in harsh environments. It offers a reference for the development of high temperature piezoresistive pressure sensors. (semiconductor devices)

  11. High temperature thermometric phosphors for use in a temperature sensor

    Science.gov (United States)

    Allison, Stephen W.; Cates, Michael R.; Boatner, Lynn A.; Gillies, George T.

    1998-01-01

    A high temperature phosphor consists essentially of a material having the general formula LuPO.sub.4 :Dy.sub.(x),Eu.sub.(y), wherein: 0.1 wt %.ltoreq.x.ltoreq.20 wt % and 0.1 wt %.ltoreq.y.ltoreq.20 wt %. The high temperature phosphor is in contact with an article whose temperature is to be determined. The article having the phosphor in contact with it is placed in the environment for which the temperature of the article is to be determined. The phosphor is excited by a laser causing the phosphor to fluoresce. The emission from the phosphor is optically focused into a beam-splitting mirror which separates the emission into two separate emissions, the emission caused by the dysprosium dopant and the emission caused by the europium dopent. The separated emissions are optically filtered and the intensities of the emission are detected and measured. The ratio of the intensity of each emission is determined and the temperature of the article is calculated from the ratio of the intensities of the separate emissions.

  12. HIGH TEMPERATURE POLYMER FUEL CELLS

    DEFF Research Database (Denmark)

    Jensen, Jens Oluf; Qingfeng, Li; He, Ronghuan

    2003-01-01

    This paper will report recent results from our group on polymer fuel cells (PEMFC) based on the temperature resistant polymer polybenzimidazole (PBI), which allow working temperatures up to 200°C. The membrane has a water drag number near zero and need no water management at all. The high working...

  13. Potentialities of high temperature reactors (HTR)

    International Nuclear Information System (INIS)

    Hittner, D.

    2001-01-01

    This articles reviews the assets of high temperature reactors concerning the amount of radioactive wastes produced. 2 factors favors HTR-type reactors: high thermal efficiency and high burn-ups. The high thermal efficiency is due to the high temperature of the coolant, in the case of the GT-MHR project (a cooperation between General Atomic, Minatom, Framatome, and Fuji Electric) designed to burn Russian military plutonium, the expected yield will be 47% with an outlet helium temperature of 850 Celsius degrees. The high temperature of the coolant favors a lot of uses of the heat generated by the reactor: urban heating, chemical processes, or desalination of sea water.The use of a HTR-type reactor in a co-generating way can value up to 90% of the energy produced. The high burn-up is due to the technology of HTR-type fuel that is based on encapsulation of fuel balls with heat-resisting materials. The nuclear fuel of Fort-Saint-Vrain unit (Usa) has reached values of burn-ups from 100.000 to 120.000 MWj/t. It is shown that the quantity of unloaded spent fuel can be divided by 4 for the same amount of electricity produced, in the case of the GT-MHR project in comparison with a light water reactor. (A.C.)

  14. ASD-1000: High-resolution, high-temperature acetylene spectroscopic databank

    Science.gov (United States)

    Lyulin, O. M.; Perevalov, V. I.

    2017-11-01

    We present a high-resolution, high-temperature version of the Acetylene Spectroscopic Databank called ASD-1000. The databank contains the line parameters (position, intensity, Einstein coefficient for spontaneous emission, term value of the lower states, self- and air-broadening coefficients, temperature dependence exponents of the self- and air-broadening coefficients) of the principal isotopologue of C2H2. The reference temperature for line intensity is 296 K and the intensity cutoff is 10-27 cm-1/(molecule cm-2) at 1000 K. The databank has 33,890,981 entries and covers the 3-10,000 cm-1 spectral range. The databank is based on the global modeling of the line positions and intensities performed within the framework of the method of effective operators. The parameters of the effective Hamiltonian and the effective dipole moment operator have been fitted to the observed values of the line positions and intensities collected from the literature. The broadening coefficients as well as their temperature dependence exponents were calculated using the empirical equations. The databank is useful for studying high-temperature radiative properties of C2H2. ASD-1000 is freely accessible via the Internet site of V.E. Zuev Institute of Atmospheric Optics SB RAS ftp://ftp.iao.ru/pub/ASD1000/.

  15. High-efficiency photovoltaic cells

    Science.gov (United States)

    Yang, H.T.; Zehr, S.W.

    1982-06-21

    High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

  16. On radiative-magnetoconvective heat and mass transfer of a nanofluid past a non-linear stretching surface with Ohmic heating and convective surface boundary condition

    Directory of Open Access Journals (Sweden)

    Shweta Mishra

    2016-12-01

    Full Text Available In this paper magnetoconvective heat and mass transfer characteristics of a two-dimensional steady flow of a nanofluid over a non-linear stretching sheet in the presence of thermal radiation, Ohmic heating and viscous dissipation have been investigated numerically. The model used for the nanofluid incorporates the effects of the Brownian motion and the presence of nanoparticles in the base fluid. The governing equations are transformed into a system of nonlinear ordinary differential equations by using similarity transformation. The numerical solutions are obtained by using fifth order Runge–Kutta–Fehlberg method with shooting technique. The non-dimensional parameters on velocity, temperature and concentration profiles and also on local Nusselt number and Sherwood number are discussed. The results indicate that the local skin friction coefficient decreases as the value of the magnetic parameter increases whereas the Nusselt number and Sherwood number increase as the values of the Brownian motion parameter and magnetic parameter increase.

  17. High-Temperature Lead-Free Solder Alternatives: Possibilities and Properties

    DEFF Research Database (Denmark)

    High-temperature solders have been widely used as joining materials to provide stable interconnections that resist a severe thermal environment and also to facilitate the drive for miniaturization. High-lead containing solders have been commonly used as high-temperature solders. The development...... of high-temperature lead-free solders has become an important issue for both the electronics and automobile industries because of the health and environmental concerns associated with lead usage. Unfortunately, limited choices are available as high-temperature lead-free solders. This work outlines...... the criteria for the evaluation of a new high-temperature lead-free solder material. A list of potential ternary high-temperature lead-free solder alternatives based on the Au-Sn and Au-Ge systems is proposed. Furthermore, a comprehensive comparison of the high-temperature stability of microstructures...

  18. The Improvement of Electrical Characteristics of Pt/Ti Ohmic Contacts to Ga-Doped ZnO by Homogenized KrF Pulsed Excimer Laser Treatment

    Science.gov (United States)

    Oh, Min-Suk

    2018-04-01

    We investigated the effect of KrF excimer laser surface treatment on Pt/Ti ohmic contacts to Ga-doped n-ZnO ( N d = 4.3 × 1017 cm-3). The treatment of the n-ZnO surfaces by laser irradiation greatly improved the electrical characteristics of the metal contacts. The Pt/Ti ohmic layer on the laser-irradiated n-ZnO showed specific contact resistances of 2.5 × 10-4 ˜ 4.8 × 10-4 Ω cm2 depending on the laser energy density and gas ambient, which were about two orders of magnitude lower than that of the as-grown sample, 8.4 × 10-2 Ω cm2. X-ray photoelectron spectroscopy and photoluminescence measurements showed that the KrF excimer laser treatments increased the electron concentration near the surface region of the Ga-doped n-ZnO due to the preferential evaporation of oxygen atoms from the ZnO surface by the laser-induced dissociation of Zn-O bonds.

  19. High temperature oxidation behavior of ODS steels

    Science.gov (United States)

    Kaito, T.; Narita, T.; Ukai, S.; Matsuda, Y.

    2004-08-01

    Oxide dispersion strengthened (ODS) steels are being developing for application as advanced fast reactor cladding and fusion blanket materials, in order to allow increased operation temperature. Oxidation testing of ODS steel was conducted under a controlled dry air atmosphere to evaluate the high temperature oxidation behavior. This showed that 9Cr-ODS martensitic steels and 12Cr-ODS ferritic steels have superior high temperature oxidation resistance compared to 11 mass% Cr PNC-FMS and 17 mass% Cr ferritic stainless steel. This high temperature resistance is attributed to earlier formation of the protective α-Cr 2O 3 on the outer surface of ODS steels.

  20. Characterization of temperature-dependent carrier transport in disordered indium-tin-oxide/poly (3,4-ethylenedioxythiophene):poly(styrenesulfonate)/polyfluorene/Ca/Al polymer structures

    International Nuclear Information System (INIS)

    Jiang, Joe-Air; Wang, Jen-Cheng; Fang, Chia-Hui; Wu, Ya-Fen; Teng, Jen-Wei; Chen, Yu-Ting; Fan, Ping-Lin; Nee, Tzer-En

    2011-01-01

    The temperature-dependent electrical characteristics of polyfluorene-based polymer structures over a temperature range from 200 to 300 K are systematically investigated in this study. Initially, using the definitions of the Berthelot-type model, it is found that the sample exhibits a higher Berthelot-type temperature T B with high driving voltage, indicating that carrier transport in a disordered system manifests Berthelot-type behaviors. The ideal current density-voltage curve for the polymer structures given the carrier transmit mechanism is further elucidated by taking into account the ohmic conduction, trap charge limited current, and Mott and Gurney model of space charge limited current. The proposed procedure is simple and can be used to characterize the material with reasonable accuracy. We also study the density of the traps H t , and the characteristic energy of the distribution E t to better understand the carrier-transport process in organic materials and structures.

  1. Survey of high-temperature nuclear heat application

    International Nuclear Information System (INIS)

    Kirch, N.; Schaefer, M.

    1984-01-01

    Nuclear heat application at high temperatures can be divided into two areas - use of high-temperature steam up to 550 deg. C and use of high-temperature helium up to about 950 deg. C. Techniques of high-temperature steam and heat production and application are being developed in several IAEA Member States. In all these countries the use of steam for other than electricity production is still in a project definition phase. Plans are being discussed about using steam in chemical industries, oil refineries and for new synfuel producing plants. The use of nuclear generated steam for oil recovery from sands and shale is also being considered. High-temperature nuclear process heat production gives new possibilities for the application of nuclear energy - hard coals, lignites, heavy oils, fuels with problems concerning transport, handling and pollution can be converted into gaseous or liquid energy carriers with no loss of their energy contents. The main methods for this conversion are hydrogasification with hydrogen generated by nuclear heated steam reformers and steam gasification. These techniques will allow countries with large coal resources to replace an important part of their natural gas and oil consumption. Even countries with no fossil fuels can benefit from high-temperature nuclear heat - hydrogen production by thermochemical water splitting, nuclear steel making, ammonia production and the chemical heat-pipe system are examples in this direction. (author)

  2. Hardness of high-pressure high-temperature treated single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Kawasaki, S.; Nojima, Y.; Yokomae, T.; Okino, F.; Touhara, H.

    2007-01-01

    We have performed high-pressure high-temperature (HPHT) treatments of high quality single-walled carbon nanotubes (SWCNTs) over a wide pressure-temperature range up to 13 GPa-873 K and have investigated the hardness of the HPHT-treated SWCNTs using a nanoindentation technique. It was found that the hardness of the SWCNTs treated at pressures greater than 11 GPa and at temperatures higher than 773 K is about 10 times greater than that of the SWCNTs treated at low temperature. It was also found that the hardness change of the SWCNTs is related to the structural change by the HPHT treatments which was based on synchrotron X-ray diffraction measurements

  3. High temperature resistant cermet and ceramic compositions

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1978-01-01

    Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

  4. Laser-Machined Microcavities for Simultaneous Measurement of High-Temperature and High-Pressure

    Directory of Open Access Journals (Sweden)

    Zengling Ran

    2014-08-01

    Full Text Available Laser-machined microcavities for simultaneous measurement of high-temperature and high-pressure are demonstrated. These two cascaded microcavities are an air cavity and a composite cavity including a section of fiber and an air cavity. They are both placed into a pressure chamber inside a furnace to perform simultaneous pressure and high-temperature tests. The thermal and pressure coefficients of the short air cavity are ~0.0779 nm/°C and ~1.14 nm/MPa, respectively. The thermal and pressure coefficients of the composite cavity are ~32.3 nm/°C and ~24.4 nm/MPa, respectively. The sensor could be used to separate temperature and pressure due to their different thermal and pressure coefficients. The excellent feature of such a sensor head is that it can withstand high temperatures of up to 400 °C and achieve precise measurement of high-pressure under high temperature conditions.

  5. Laser-machined microcavities for simultaneous measurement of high-temperature and high-pressure.

    Science.gov (United States)

    Ran, Zengling; Liu, Shan; Liu, Qin; Huang, Ya; Bao, Haihong; Wang, Yanjun; Luo, Shucheng; Yang, Huiqin; Rao, Yunjiang

    2014-08-07

    Laser-machined microcavities for simultaneous measurement of high-temperature and high-pressure are demonstrated. These two cascaded microcavities are an air cavity and a composite cavity including a section of fiber and an air cavity. They are both placed into a pressure chamber inside a furnace to perform simultaneous pressure and high-temperature tests. The thermal and pressure coefficients of the short air cavity are ~0.0779 nm/°C and ~1.14 nm/MPa, respectively. The thermal and pressure coefficients of the composite cavity are ~32.3 nm/°C and ~24.4 nm/MPa, respectively. The sensor could be used to separate temperature and pressure due to their different thermal and pressure coefficients. The excellent feature of such a sensor head is that it can withstand high temperatures of up to 400 °C and achieve precise measurement of high-pressure under high temperature conditions.

  6. Development of high temperature turbine

    Energy Technology Data Exchange (ETDEWEB)

    Takahara, Kitao; Nouse, Hiroyuki; Yoshida, Toyoaki; Minoda, Mitsuhiro; Matsusue, Katsutoshi; Yanagi, Ryoji

    1988-07-01

    For the contribution to the development of FJR710, high by-pass ratio turbofan engine, with the study for many years of the development of high efficiency turbine for the jet engine, the first technical prize from the Energy Resource Research Committee was awarded in April, 1988. This report introduced its technical contents. In order to improve the thermal efficiency and enlarge the output, it is very effective to raise the gas temperature at the inlet of gas turbine. For its purpose, by cooling the nozzle and moving blades and having those blades operate at lower temperature than that of the working limitation, they realized, for the first time in Japan, the technique of cooling turbine to heighten the operational gas temperature. By that technique, it was enabled to raise the gas temperature at the inlet of turbine, to 1,350/sup 0/C from 850/sup 0/C. This report explain many important points of study covering the basic test, visualizing flow experiment, material discussion and structural design in the process of development. (9 figs)

  7. High temperature battery. Hochtemperaturbatterie

    Energy Technology Data Exchange (ETDEWEB)

    Bulling, M.

    1992-06-04

    To prevent heat losses of a high temperature battery, it is proposed to make the incoming current leads in the area of their penetration through the double-walled insulating housing as thermal throttle, particularly spiral ones.

  8. Simulation of D and E region high-power microwave heating with HF ionospheric modification experiments

    International Nuclear Information System (INIS)

    Meltz, G.; Rush, C.M.; Violette, E.J.

    1981-01-01

    The microwave power beam from a Solar Power Satellite (SPS) is sufficiently intense to cause large changes in the properties of the lower ionosphere by ohmic heating of the plasma. Power is absorbed from the beam at a rate that is proportional to the ratio of the flux s and the square of an effective frequency f/sub e/. Throughout most of the lower ionosphere f/sub e/ = f -+ f/sub L/, where f is the wave frequency and f/sub L is a reduced electron gyrofrequency. It follows that SPS equivalent heating can be simulated at much lower power fluxes with HF radio waves. A detailed examination of the frequency scaling, based on fluid and kinetic theory estimates of the change in electron temperature and density, shows that the high-power HF facility at Platteville, CO, can simulate or exceed the ohmic effects of the SPS beam up to 90 km. This paper describes the results of a series of 5.2 and 9.9 MHz underdense heating experiments undertaken to study the effect of high-power microwaves on the lower ionosphere. A pulsed ionosonde probe, located nearly below the most intense portion of the high-power beam, was used to observe the changes in the D and lower E region. Both phase and amplitude measurements were recorded during CW and intermittent heating

  9. New temperature monitoring devices for high-temperature irradiation experiments in the high flux reactor Petten

    Energy Technology Data Exchange (ETDEWEB)

    Laurie, M.; Futterer, M. A.; Lapetite, J. M. [European Commission Joint Research Centre, Institute for Energy, P.O. Box 2, NL-1755 ZG Petten (Netherlands); Fourrez, S. [THERMOCOAX SAS, BP 26, Planquivon, 61438 Flers Cedex (France); Morice, R. [Laboratoire National de Metrologie et d' Essais, 1 rue Gaston Boissier, 75724 Paris (France)

    2009-07-01

    Within the European High Temperature Reactor Technology Network (HTR-TN) and related projects a number of HTR fuel irradiations are planned in the High Flux Reactor Petten (HFR), The Netherlands, with the objective to explore the potential of recently produced fuel for even higher temperature and burn-up. Irradiating fuel under defined conditions to extremely high burn-ups will provide a better understanding of fission product release and failure mechanisms if particle failure occurs. After an overview of the irradiation rigs used in the HFR, this paper sums up data collected from previous irradiation tests in terms of thermocouple data. Some research and development work for further improvement of thermocouples and other on-line instrumentation will be outlined. (authors)

  10. Spin Hall magnetoresistance at high temperatures

    International Nuclear Information System (INIS)

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-01-01

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y 3 Fe 5 O 12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface

  11. High-pressure high-temperature experiments: Windows to the Universe

    International Nuclear Information System (INIS)

    Santaria-Perez, D.

    2011-01-01

    From Earth compositional arguments suggested by indirect methods, such as the propagation of seismic waves, is possible to generate in the laboratory pressure and temperature conditions similar to those of the Earth or other planet interiors and to study how these conditions affect to a certain metal or mineral. These experiments are, therefore, windows to the Universe. The aim of this chapter is to illustrate the huge power of the experimental high-pressure high-temperature techniques and give a global overview of their application to different geophysical fields. Finally, we will introduce the MALTA Consolider Team, which gather most of the Spanish high-pressure community, and present their available high-pressure facilities. (Author) 28 refs.

  12. In Situ Observation of Gypsum-Anhydrite Transition at High Pressure and High Temperature

    Institute of Scientific and Technical Information of China (English)

    LIU Chuan-Jiang; ZHENG Hai-Fei

    2012-01-01

    An in-situ Raman spectroscopic study of gypsum-anhydrite transition under a saturated water condition at high pressure and high temperature is performed using a hydrothermal diamond anvil cell (HDAC).The experimental results show that gypsum dissolvs in water at ambient temperature and above 496 MPa.With increasing temperature,the anhydrite (CaSO4) phase precipitates at 250 320℃ in the pressure range of 1.0 1.5 GPa,indicating that under a saturated water condition,both stable conditions of pressure and temperature and high levels of Ca and SO4 ion concentrations in aqueous solution are essential for the formation of anhydrite.A linear relationship between the pressure and temperature for the precipitation of anhydrite is established as P(GPa) =0.0068T - 0.7126 (250℃≤T≤320℃).Anhydrite remained stable during rapid cooling of the sample chamber,showing that the gypsum-anhydrite transition involving both dissolution and precipitation processes is irreversible at high pressure and high temperature.%An in-situ Raman spectroscopic study of gypsum-anhydrite transition under a saturated water condition at high pressure and high temperature is performed using a hydrothermal diamond anvil cell (HDAC). The experimental results show that gypsum dissolvs in water at ambient temperature and above 496 Mpa. With increasing temperature, the anhydrite (CaSO4) phase precipitates at 250-320℃ in the pressure range of 1.0-1.5 Gpa, indicating that under a saturated water condition, both stable conditions of pressure and temperature and high levels of Ca and SO4 ion concentrations in aqueous solution are essential for the formation of anhydrite. A linear relationship between the pressure and temperature for the precipitation of anhydrite is established as P(Gpa) = 0.0068T - 0.7126 (250℃≤T≤320℃). Anhydrite remained stable during rapid cooling of the sample chamber, showing that the gypsum-anhydrite transition involving both dissolution and precipitation processes is

  13. Symposium on high temperature and materials chemistry

    International Nuclear Information System (INIS)

    1989-10-01

    This volume contains the written proceedings of the Symposium on High Temperature and Materials Chemistry held in Berkeley, California on October 24--25, 1989. The Symposium was sponsored by the Materials and Chemical Sciences Division of Lawrence Berkeley Laboratory and by the College of Chemistry of the University of California at Berkeley to discuss directions, trends, and accomplishments in the field of high temperature and materials chemistry. Its purpose was to provide a snapshot of high temperature and materials chemistry and, in so doing, to define status and directions

  14. Symposium on high temperature and materials chemistry

    Energy Technology Data Exchange (ETDEWEB)

    1989-10-01

    This volume contains the written proceedings of the Symposium on High Temperature and Materials Chemistry held in Berkeley, California on October 24--25, 1989. The Symposium was sponsored by the Materials and Chemical Sciences Division of Lawrence Berkeley Laboratory and by the College of Chemistry of the University of California at Berkeley to discuss directions, trends, and accomplishments in the field of high temperature and materials chemistry. Its purpose was to provide a snapshot of high temperature and materials chemistry and, in so doing, to define status and directions.

  15. High-Pressure High-Temperature Phase Diagram of the Organic Crystal Paracetamol

    Science.gov (United States)

    Smith, Spencer; Montgomery, Jeffrey; Vohra, Yogesh

    High-pressure high-temperature (HPHT) Raman spectroscopy studies have been performed on the organic crystal paracetamol in a diamond anvil cell utilizing boron-doped diamond as heating anvil. The HPHT data obtained from boron-doped diamond heater is cross-checked with data obtained using a standard block heater diamond anvil cell. Isobaric measurements were conducted at pressures up to 8.5 GPa and temperature up to 520 K in a number of different experiments. Solid state phase transitions from monoclinic Form I --> orthorhombic Form II were observed at various pressures and temperatures as well as transitions from Form II --> unknown Form IV. The melting temperature for paracetamol was observed to increase with increasing pressures to 8.5 GPa. Our previous angle dispersive x-ray diffraction studies at the Advanced Photon Source has confirmed the existence of two unknown crystal structures Form IV and Form V of paracetamol at high pressure and ambient temperature. The phase transformation from Form II to Form IV occurs at ~8.5 GPa and from Form IV to Form V occurs at ~11 GPa at ambient temperature. Our new data is combined with the previous ambient temperature high-pressure Raman and X- ray diffraction data to create the first HPHT phase diagram of paracetamol. Doe-NNSA Carnegie DOE Alliance Center (CDAC) under Grant Number DE-NA0002006.

  16. High Temperature Strength of Oxide Dispersion Strengthened Aluminium

    DEFF Research Database (Denmark)

    Clauer, A.H.; Hansen, Niels

    1984-01-01

    constant (except for the material with the lowest oxide content). The high temperature values of the modulus-corrected yield stresses are approximately two-thirds of the low temperature value. During high temperature creep, there is a definite indication of a threshold stress. This threshold stress......The tensile flow stress of coarse-grained dispersion strengthened Al-Al2O3 materials were measured as a function of temperature (77–873 K) and volume fraction (0.19-0.92 vol.%) of aluminium oxide. For the same material, the creep strength was determined as a function of temperature in the range 573......–873 K. The modulus-corrected yield stress (0.01 offset) is found to be temperature independent at low temperature (195–472 K). Between 473 and 573 K, the yield stress starts to decrease with increasing temperature. At high temperatures (573–873 K), the modulus-corrected yield stress is approximately...

  17. High Temperature, Wireless Seismometer Sensor for Venus

    Science.gov (United States)

    Ponchak, George E.; Scardelletti, Maximilian C.; Taylor, Brandt; Beard, Steve; Meredith, Roger D.; Beheim, Glenn M.; Hunter Gary W.; Kiefer, Walter S.

    2012-01-01

    Space agency mission plans state the need to measure the seismic activity on Venus. Because of the high temperature on Venus (462? C average surface temperature) and the difficulty in placing and wiring multiple sensors using robots, a high temperature, wireless sensor using a wide bandgap semiconductor is an attractive option. This paper presents the description and proof of concept measurements of a high temperature, wireless seismometer sensor for Venus. A variation in inductance of a coil caused by the movement of an aluminum probe held in the coil and attached to a balanced leaf-spring seismometer causes a variation of 700 Hz in the transmitted signal from the oscillator/sensor system at 426? C. This result indicates that the concept may be used on Venus.

  18. High temperature superconductors and other superfluids

    CERN Document Server

    Alexandrov, A S

    2017-01-01

    Written by eminent researchers in the field, this text describes the theory of superconductivity and superfluidity starting from liquid helium and a charged Bose-gas. It also discusses the modern bipolaron theory of strongly coupled superconductors, which explains the basic physical properties of high-temperature superconductors. This book will be of interest to fourth year graduate and postgraduate students, specialist libraries, information centres and chemists working in high-temperature superconductivity.

  19. Effect of In-situ Cure on Measurement of Glass Transition Temperatures in High-temperature Thermosetting Polymers

    Science.gov (United States)

    2015-01-01

    TEMPERATURES IN HIGH-TEMPERATURE THERMOSETTING POLYMERS 5a. CONTRACT NUMBER In-House 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6. AUTHOR(S...illustrated the difficulties inherent in measurement of the glass transition temperature of this high-temperature thermosetting polymer via dynamic...copyright protection in the United States. EFFECT OF IN-SITU CURE ON MEASUREMENT OF GLASS TRANSITION TEMPERATURES IN HIGH-TEMPERATURE THERMOSETTING

  20. Quantitative Temperature Dependence of Longitudinal Spin Seebeck Effect at High Temperatures

    Directory of Open Access Journals (Sweden)

    Ken-ichi Uchida

    2014-11-01

    Full Text Available We report temperature-dependent measurements of longitudinal spin Seebeck effects (LSSEs in Pt/Y_{3}Fe_{5}O_{12} (YIG/Pt systems in a high temperature range from room temperature to above the Curie temperature of YIG. The experimental results show that the magnitude of the LSSE voltage in the Pt/YIG/Pt systems rapidly decreases with increasing the temperature and disappears above the Curie temperature. The critical exponent of the LSSE voltage in the Pt/YIG/Pt systems at the Curie temperature is estimated to be 3, which is much greater than that for the magnetization curve of YIG. This difference highlights the fact that the mechanism of the LSSE cannot be explained in terms of simple static magnetic properties in YIG.

  1. Packaging Technologies for High Temperature Electronics and Sensors

    Science.gov (United States)

    Chen, Liangyu; Hunter, Gary W.; Neudeck, Philip G.; Beheim, Glenn M.; Spry, David J.; Meredith, Roger D.

    2013-01-01

    This paper reviews ceramic substrates and thick-film metallization based packaging technologies in development for 500degC silicon carbide (SiC) electronics and sensors. Prototype high temperature ceramic chip-level packages and printed circuit boards (PCBs) based on ceramic substrates of aluminum oxide (Al2O3) and aluminum nitride (AlN) have been designed and fabricated. These ceramic substrate-based chiplevel packages with gold (Au) thick-film metallization have been electrically characterized at temperatures up to 550degC. A 96% alumina based edge connector for a PCB level subsystem interconnection has also been demonstrated recently. The 96% alumina packaging system composed of chip-level packages and PCBs has been tested with high temperature SiC devices at 500degC for over 10,000 hours. In addition to tests in a laboratory environment, a SiC JFET with a packaging system composed of a 96% alumina chip-level package and an alumina printed circuit board mounted on a data acquisition circuit board was launched as a part of the MISSE-7 suite to the International Space Station via a Shuttle mission. This packaged SiC transistor was successfully tested in orbit for eighteen months. A spark-plug type sensor package designed for high temperature SiC capacitive pressure sensors was developed. This sensor package combines the high temperature interconnection system with a commercial high temperature high pressure stainless steel seal gland (electrical feed-through). Test results of a packaged high temperature capacitive pressure sensor at 500degC are also discussed. In addition to the pressure sensor package, efforts for packaging high temperature SiC diode-based gas chemical sensors are in process.

  2. Measurements of temperature characteristics and estimation of terahertz negative differential conductance in resonant-tunneling-diode oscillators

    Directory of Open Access Journals (Sweden)

    M. Asada

    2017-11-01

    Full Text Available The temperature dependences of output power, oscillation frequency, and current-voltage curve are measured for resonant-tunneling-diode terahertz (THz oscillators. The output power largely changes with temperature owing to the change in Ohmic loss. In contrast to the output power, the oscillation frequency and current-voltage curve are almost insensitive to temperature. The measured temperature dependence of output power is compared with the theoretical calculation including the negative differential conductance (NDC as a fitting parameter assumed to be independent of temperature. Very good agreement was obtained between the measurement and calculation, and the NDC in the THz frequency region is estimated. The results show that the absolute values of NDC in the THz region significantly decrease relative to that at DC, and increases with increasing frequency in the measured frequency range.

  3. Promising materials for HTGR high temperature heat exchangers

    International Nuclear Information System (INIS)

    Kuznetsov, E.V.; Tokareva, T.B.; Ryabchenkov, A.V.; Novichkova, O.V.; Starostin, Yu.D.

    1989-01-01

    The service conditions for high-temperature heat-exchangers with helium coolant of HTGRs and requirements imposed on materials for their production are discussed. The choice of nickel-base alloys with solid-solution hardening for long-term service at high temperatures is grounded. Results of study on properties and structure of types Ni-25Cr-5W-5Mo and Ni-20Cr-20W alloy in the temperature range of 900 deg. - 1,000 deg. C are given. The ageing of Ni-25Cr-5W-5Mo alloy at 900 deg. - 950 deg. C results in decreased corrosion-mechanical properties and is caused by the change of structural metal stability. Alloy with 20% tungsten retains a high stability of both structure and properties after prolonged exposure in helium at above temperatures. The alloy has also increased resistance to delayed fracture and low-cycle fatigue at high temperatures. The developed alloy of type Ni-20Cr-20W with microalloying is recommended for production of tubes for HTGR high-temperature heat-exchangers with helium coolant. (author). 3 refs, 8 figs

  4. High temperature thermoelectric energy conversion

    International Nuclear Information System (INIS)

    Wood, C.

    1986-01-01

    Considerable advances were made in the late '50's and early early '60's in the theory and development of materials for high-temperature thermoelectric energy conversion. This early work culminated in a variety of materials, spanning a range of temperatures, with the product of the figure of merit, Z, and temperature, T, i.e., the dimensionless figure of merit, ZT, of the order of one. This experimental limitation appeared to be universal and led a number of investigators to explore the possibility that a ZT - also represents a theoretical limitation. It was found not to be so

  5. High temperature and high pressure gas cell for quantitative spectroscopic measurements

    DEFF Research Database (Denmark)

    Christiansen, Caspar; Stolberg-Rohr, Thomine; Fateev, Alexander

    2016-01-01

    A high temperature and high pressure gas cell (HTPGC) has been manufactured for quantitative spectroscopic measurements in the pressure range 1-200 bar and temperature range 300-1300 K. In the present work the cell was employed at up to 100 bar and 1000 K, and measured absorption coefficients...... of a CO2-N2 mixture at 100 bar and 1000 K are revealed for the first time, exceeding the high temperature and pressure combinations previously reported. This paper discusses the design considerations involved in the construction of the cell and presents validation measurements compared against simulated...

  6. High point for CERN and high-temperature superconductors

    CERN Multimedia

    2007-01-01

    Amalia Ballarino is named the Superconductor Industry Person of the year 2006. Amalia Ballarino showing a tape of high-superconducting material used for the LHC current leads.The CERN project leader for the high-temperature superconducting current leads for the LHC, Amalia Ballarino, has received the award for "Superconductor Industry Person of the Year". This award, the most prestigious international award in the development and commercialization of superconductors, is presented by the leading industry newsletter "Superconductor Week". Amalia Ballarino was selected from dozens of nominations from around the world by a panel of recognized leading experts in superconductivity. "It is a great honour for me," says Amalia Ballarino. "It has been many years of hard work, and it’s a great satisfaction to see that the work has been completed successfully." Amalia Ballarino has been working on high-temperature superconducting materials sin...

  7. High-temperature fusion of a multielectron leviton

    Science.gov (United States)

    Moskalets, Michael

    2018-04-01

    The state of electrons injected onto the surface of the Fermi sea depends on temperature. The state is pure at zero temperature and is mixed at finite temperature. In the case of a single-electron injection, such a transformation can be detected as a decrease in shot noise with increasing temperature. In the case of a multielectron injection, the situation is subtler. The mixedness helps the development of quantum-mechanical exchange correlations between injected electrons, even if such correlations are absent at zero temperature. These correlations enhance the shot noise, which in part counteracts the reduction of noise with temperature. Moreover, at sufficiently high temperatures, the correlation contribution to noise predominates over the contribution of individual particles. As a result, in the system of N electrons, the apparent charge (which is revealed via the shot noise) is changed from e at zero temperature to N e at high temperatures. It looks like the exchange correlations glue electrons into one particle of total charge and energy. This point of view is supported by both charge noise and heat noise. Interestingly, in the macroscopic limit, N →∞ , the correlation contribution completely suppresses the effect of temperature on noise.

  8. High Temperature Fluoride Salt Test Loop

    Energy Technology Data Exchange (ETDEWEB)

    Aaron, Adam M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Cunningham, Richard Burns [Univ. of Tennessee, Knoxville, TN (United States); Fugate, David L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Holcomb, David Eugene [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kisner, Roger A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Peretz, Fred J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Robb, Kevin R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Yoder, Jr, Graydon L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-12-01

    Effective high-temperature thermal energy exchange and delivery at temperatures over 600°C has the potential of significant impact by reducing both the capital and operating cost of energy conversion and transport systems. It is one of the key technologies necessary for efficient hydrogen production and could potentially enhance efficiencies of high-temperature solar systems. Today, there are no standard commercially available high-performance heat transfer fluids above 600°C. High pressures associated with water and gaseous coolants (such as helium) at elevated temperatures impose limiting design conditions for the materials in most energy systems. Liquid salts offer high-temperature capabilities at low vapor pressures, good heat transport properties, and reasonable costs and are therefore leading candidate fluids for next-generation energy production. Liquid-fluoride-salt-cooled, graphite-moderated reactors, referred to as Fluoride Salt Reactors (FHRs), are specifically designed to exploit the excellent heat transfer properties of liquid fluoride salts while maximizing their thermal efficiency and minimizing cost. The FHR s outstanding heat transfer properties, combined with its fully passive safety, make this reactor the most technologically desirable nuclear power reactor class for next-generation energy production. Multiple FHR designs are presently being considered. These range from the Pebble Bed Advanced High Temperature Reactor (PB-AHTR) [1] design originally developed by UC-Berkeley to the Small Advanced High-Temperature Reactor (SmAHTR) and the large scale FHR both being developed at ORNL [2]. The value of high-temperature, molten-salt-cooled reactors is also recognized internationally, and Czechoslovakia, France, India, and China all have salt-cooled reactor development under way. The liquid salt experiment presently being developed uses the PB-AHTR as its focus. One core design of the PB-AHTR features multiple 20 cm diameter, 3.2 m long fuel channels

  9. HYFIRE: a tokamak-high-temperature electrolysis system

    International Nuclear Information System (INIS)

    Fillo, J.A.; Powell, J.R.; Steinberg, M.; Benenati, R.; Horn, F.; Isaacs, H.; Lazareth, O.W.; Makowitz, H.; Usher, J.

    1980-01-01

    Brookhaven National Laboratory (BNL) is carrying out a comprehensive conceptual design study called HYFIRE of a commercial fusion Tokamak reactor, high-temperature electrolysis system. The study is placing particular emphasis on the adaptability of the STARFIRE power reactor to a synfuel application. The HYFIRE blanket must perform three functions: (a) provide high-temperature (approx. 1400 0 C) process steam at moderate pressures (in the range of 10 to 30 atm) to the high-temperature electrolysis (HTE) units; (b) provide high-temperature (approx. 700 0 to 800 0 C) heat to a thermal power cycle for generation of electricity to the HTE units; and (c) breed enough tritium to sustain the D-T fuel cycle. In addition to thermal energy for the decomposition of steam into its constituents, H 2 and O 2 , electrical input is required. Fourteen hundred degree steam coupled with 40% power efficiency results in a process efficiency (conversion of fusion energy to hydrogen chemical energy) of 50%

  10. HYFIRE: a tokamak-high-temperature electrolysis system

    International Nuclear Information System (INIS)

    Fillo, J.A.; Powell, J.R.; Steinberg, M.; Benenati, R.; Horn, F.; Isaacs, H.; Lazareth, O.W.; Makowitz, H.; Usher, J.

    1980-01-01

    Brookhaven National Laboratory (BNL) is carrying out a comprehensive conceptual design study called HYFIRE of a commercial fusion Tokamak reactor, high-temperature electrolysis system. The study is placing particular emphasis on the adaptability of the STARFIRE power reactor to a synfuel application. The HYFIRE blanket must perform three functions: (a) provide high-temperature (approx. 1400 0 C) process steam at moderate pressures (in the range of 10 to 30 atm) to the high-temperature electrolysis (HTE) units; (b) provide high-temperature (approx. 700 0 to 800 0 C) heat to a thermal power cycle for generation of electricity to the HTE units; and (c) breed enough tritium to sustain the D-T fuel cycle. In addition to thermal energy for the decomposition of steam into its constituents, H 2 and O 2 , electrical input is required. Fourteen hundred degree steam coupled with 40% power cycle efficiency results in a process efficiency (conversion of fusion energy to hydrogen chemical energy) of 50%

  11. New Waste Calciner High Temperature Operation

    International Nuclear Information System (INIS)

    Swenson, M.C.

    2000-01-01

    A new Calciner flowsheet has been developed to process the sodium-bearing waste (SBW) in the INTEC Tank Farm. The new flowsheet increases the normal Calciner operating temperature from 500 C to 600 C. At the elevated temperature, sodium in the waste forms stable aluminates, instead of nitrates that melt at calcining temperatures. From March through May 2000, the new high-temperature flowsheet was tested in the New Waste Calcining Facility (NWCF) Calciner. Specific test criteria for various Calciner systems (feed, fuel, quench, off-gas, etc.) were established to evaluate the long-term operability of the high-temperature flowsheet. This report compares in detail the Calciner process data with the test criteria. The Calciner systems met or exceeded all test criteria. The new flowsheet is a visible, long-term method of calcining SBW. Implementation of the flowsheet will significantly increase the calcining rate of SBW and reduce the amount of calcine produced by reducing the amount of chemical additives to the Calciner. This will help meet the future waste processing milestones and regulatory needs such as emptying the Tank Farm

  12. High-temperature plasma physics

    International Nuclear Information System (INIS)

    Furth, H.P.

    1988-03-01

    Both magnetic and inertial confinement research are entering the plasma parameter range of fusion reactor interest. This paper reviews the individual and common technical problems of these two approaches to the generation of thermonuclear plasmas, and describes some related applications of high-temperature plasma physics

  13. Short steel and concrete columns under high temperatures

    Directory of Open Access Journals (Sweden)

    A. E. P. G. A. Jacintho

    Full Text Available The growing demand for knowledge about the effect of high temperatures on structures has stimulated increasing research worldwide. This article presents experimental results for short composite steel and concrete columns subjected to high temperatures in ovens with or without an axial compression load, numerically analyzes the temperature distribution in these columns after 30 and 60 minutes and compares them with experimental results. The models consist of concrete-filled tubes of three different thicknesses and two different diameters, and the concrete fill has conventional properties that remained constant for all of the models. The stress-strain behavior of the composite columns was altered after exposure to high temperatures relative to the same columns at room temperature, which was most evident in the 60-minute tests due to the higher temperatures reached. The computational analysis adopted temperature rise curves that were obtained experimentally.

  14. Dynamic high-temperature characterization of an iridium alloy in tension

    Energy Technology Data Exchange (ETDEWEB)

    Song, Bo [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Nelson, Kevin [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Jin, Helena [Sandia National Lab. (SNL-CA), Livermore, CA (United States); Lipinski, Ronald J. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Bignell, John [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Ulrich, G. B. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); George, E. P. [Ruhr Univ., Bochum (Germany)

    2015-09-01

    Iridium alloys have been utilized as structural materials for certain high-temperature applications, due to their superior strength and ductility at elevated temperatures. The mechanical properties, including failure response at high strain rates and elevated temperatures of the iridium alloys need to be characterized to better understand high-speed impacts at elevated temperatures. A DOP-26 iridium alloy has been dynamically characterized in compression at elevated temperatures with high-temperature Kolsky compression bar techniques. However, the dynamic high-temperature compression tests were not able to provide sufficient dynamic high-temperature failure information of the iridium alloy. In this study, we modified current room-temperature Kolsky tension bar techniques for obtaining dynamic tensile stress-strain curves of the DOP-26 iridium alloy at two different strain rates (~1000 and ~3000 s-1) and temperatures (~750°C and ~1030°C). The effects of strain rate and temperature on the tensile stress-strain response of the iridium alloy were determined. The DOP-26 iridium alloy exhibited high ductility in stress-strain response that strongly depended on both strain rate and temperature.

  15. The conversion of PN-junction influencing the piezoelectric output of a CuO/ZnO nanoarray nanogenerator and its application as a room-temperature self-powered active H₂S sensor.

    Science.gov (United States)

    Nie, Yuxin; Deng, Ping; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

    2014-07-04

    Room-temperature, high H2S sensing has been realized from a CuO/ZnO nanoarray self-powered, active gas sensor. The piezoelectric output of CuO/ZnO nanoarrays can act not only as the power source of the device, but also as the H2S sensing signal at room temperature. Upon exposure to 800 ppm H2S at room temperature, the piezoelectric output of the device greatly decreased from 0.738 V (in air) to 0.101 V. The sensitivity increased to 629.8, much higher than bare ZnO nanoarrays. As the device was exposed to H2S, a CuO/ZnO PN-junction was converted into a CuS/ZnO Ohmic contact, which greatly increased the electron density in the nanowire and enhanced the screen effect on the piezoelectric output. Our results can stimulate a research trend on designing new composite piezoelectric material for high-performance self-powered active gas sensors.

  16. Study Progress of Physiological Responses in High Temperature Environment

    Science.gov (United States)

    Li, K.; Zheng, G. Z.; Bu, W. T.; Wang, Y. J.; Lu, Y. Z.

    2017-10-01

    Certain workers are exposed to high temperatures for a long time. Heat stress will result in a series of physiological responses, and cause adverse effects on the health and safety of workers. This paper summarizes the physiological changes of cardiovascular system, core temperature, skin temperature, water-electrolyte metabolism, alimentary system, neuroendocrine system, reaction time and thermal fatigue in high temperature environments. It can provide a theoretical guidance for labor safety in high temperature environment.

  17. Applications of high-temperature superconductivity

    International Nuclear Information System (INIS)

    Malozemoff, A.P.; Gallagher, W.J.; Schwall, R.E.

    1987-01-01

    The new high temperature superconductors open up possibilities for applications in magnets, power transmission, computer interconnections, Josephson devices and instrumentation, among many others. The success of these applications hinges on many interlocking factors, including critical current density, critical fields, allowable processing temperatures, mechanical properties and chemical stability. An analysis of some of these factors suggests which applications may be the easiest to realize and which may have the greatest potential

  18. Structural behavior of reinforced concrete structures at high temperatures

    International Nuclear Information System (INIS)

    Yamazaki, N.; Yamazaki, M.; Mochida, T.; Mutoh, A.; Miyashita, T.; Ueda, M.; Hasegawa, T.; Sugiyama, K.; Hirakawa, K.; Kikuchi, R.; Hiramoto, M.; Saito, K.

    1995-01-01

    To establish a method to predict the behavior of reinforced concrete structures subjected simultaneously to high temperatures and external loads, this paper presents the results obtained in several series of tests carried out recently in Japan. This paper reports on the material properties of concrete and steel bars under high temperatures. It also considers the heat transfer properties of thick concrete walls under transient high temperatures, and the structural behavior of reinforced concrete beams subjected to high temperatures. In the tests, data up to 800 C were obtained for use in developing a computational method to estimate the non-linear behavior of reinforced concrete structures exposed to high temperatures. (orig.)

  19. Quenching ilmenite with a high-temperature and high-pressure phase using super-high-energy ball milling.

    Science.gov (United States)

    Hashishin, Takeshi; Tan, Zhenquan; Yamamoto, Kazuhiro; Qiu, Nan; Kim, Jungeum; Numako, Chiya; Naka, Takashi; Valmalette, Jean Christophe; Ohara, Satoshi

    2014-04-25

    The mass production of highly dense oxides with high-temperature and high-pressure phases allows us to discover functional properties that have never been developed. To date, the quenching of highly dense materials at the gramme-level at ambient atmosphere has never been achieved. Here, we provide evidence of the formation of orthorhombic Fe2TiO4 from trigonal FeTiO3 as a result of the high-temperature (>1250 K) and high-pressure (>23 GPa) condition induced by the high collision energy of 150 gravity generated between steel balls. Ilmenite was steeply quenched by the surrounding atmosphere, when iron-rich ilmenite (Fe2TiO4) with a high-temperature and high-pressure phase was formed by planetary collisions and was released from the collision points between the balls. Our finding allows us to infer that such intense planetary collisions induced by high-energy ball milling contribute to the mass production of a high-temperature and high-pressure phase.

  20. High temperature superconductors applications in telecommunications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.A.; Li, J.; Zhang, M.F. [Prairie View A& M Univ., Texas (United States)

    1994-12-31

    The purpose of this paper is twofold: to discuss high temperature superconductors with specific reference to their employment in telecommunications applications; and to discuss a few of the limitations of the normally employed two-fluid model. While the debate on the actual usage of high temperature superconductors in the design of electronic and telecommunications devices-obvious advantages versus practical difficulties-needs to be settled in the near future, it is of great interest to investigate the parameters and the assumptions that will be employed in such designs. This paper deals with the issue of providing the microwave design engineer with performance data for such superconducting waveguides. The values of conductivity and surface resistance, which are the primary determining factors of a waveguide performance, are computed based on the two-fluid model. A comparison between two models-a theoretical one in terms of microscopic parameters (termed Model A) and an experimental fit in terms of macroscopic parameters (termed Model B)-shows the limitations and the resulting ambiguities of the two-fluid model at high frequencies and at temperatures close to the transition temperature. The validity of the two-fluid model is then discussed. Our preliminary results show that the electrical transport description in the normal and superconducting phases as they are formulated in the two-fluid model needs to be modified to incorporate the new and special features of high temperature superconductors. Parameters describing the waveguide performance-conductivity, surface resistance and attenuation constant-will be computed. Potential applications in communications networks and large scale integrated circuits will be discussed. Some of the ongoing work will be reported. In particular, a brief proposal is made to investigate of the effects of electromagnetic interference and the concomitant notion of electromagnetic compatibility (EMI/EMC) of high T{sub c} superconductors.

  1. High temperature superconductors applications in telecommunications

    International Nuclear Information System (INIS)

    Kumar, A.A.; Li, J.; Zhang, M.F.

    1994-01-01

    The purpose of this paper is twofold: to discuss high temperature superconductors with specific reference to their employment in telecommunications applications; and to discuss a few of the limitations of the normally employed two-fluid model. While the debate on the actual usage of high temperature superconductors in the design of electronic and telecommunications devices-obvious advantages versus practical difficulties-needs to be settled in the near future, it is of great interest to investigate the parameters and the assumptions that will be employed in such designs. This paper deals with the issue of providing the microwave design engineer with performance data for such superconducting waveguides. The values of conductivity and surface resistance, which are the primary determining factors of a waveguide performance, are computed based on the two-fluid model. A comparison between two models-a theoretical one in terms of microscopic parameters (termed Model A) and an experimental fit in terms of macroscopic parameters (termed Model B)-shows the limitations and the resulting ambiguities of the two-fluid model at high frequencies and at temperatures close to the transition temperature. The validity of the two-fluid model is then discussed. Our preliminary results show that the electrical transport description in the normal and superconducting phases as they are formulated in the two-fluid model needs to be modified to incorporate the new and special features of high temperature superconductors. Parameters describing the waveguide performance-conductivity, surface resistance and attenuation constant-will be computed. Potential applications in communications networks and large scale integrated circuits will be discussed. Some of the ongoing work will be reported. In particular, a brief proposal is made to investigate of the effects of electromagnetic interference and the concomitant notion of electromagnetic compatibility (EMI/EMC) of high T c superconductors

  2. Elevated temperature erosion studies on some materials for high temperature applications

    International Nuclear Information System (INIS)

    Zhou Jianren.

    1991-01-01

    The surface degradation of materials due to high temperature erosion or combined erosion corrosion is a serious problem in many industrial and aeronautical applications. As such, it has become an important design consideration in many situations. The materials investigated in the present studies are stainless steels, Ti-6Al-4V, alumina ceramics, with and without silicate glassy phase, and zirconia. These are some of the potential materials for use in the high temperature erosive-corrosive environments. The erosion or erosion-corrosion experiments were performed in a high temperature sand-blast type of test rig. The variables studied included the temperature, material composition, heat treatment condition, impingement velocity and angle, erodent concentration, etc. The morphological features of the eroded or eroded-corroded surfaces, substrate deformation, and oxide characteristics were studied by optical and scanning electron microscopy, X-ray diffraction, energy dispersive X-ray spectroscopy, thermogravimetric analysis. The scratch test, single ball impact, and indentation tests were used to understand the behavior of oxide film in particle impacts. Based on these studies, the understanding of the mechanisms involved in the mechanical or combined mechanical and chemical actions in erosion was developed

  3. Hydrogen Production from Nuclear Energy via High Temperature Electrolysis

    International Nuclear Information System (INIS)

    James E. O'Brien; Carl M. Stoots; J. Stephen Herring; Grant L. Hawkes

    2006-01-01

    This paper presents the technical case for high-temperature nuclear hydrogen production. A general thermodynamic analysis of hydrogen production based on high-temperature thermal water splitting processes is presented. Specific details of hydrogen production based on high-temperature electrolysis are also provided, including results of recent experiments performed at the Idaho National Laboratory. Based on these results, high-temperature electrolysis appears to be a promising technology for efficient large-scale hydrogen production

  4. Heat transfer from a high temperature condensable mixture

    International Nuclear Information System (INIS)

    Chan, S.H.; Cho, D.H.; Condiff, D.W.

    1978-01-01

    A new development in heat transfer is reported. It is concerned with heat transfer from a gaseous mixture that contains a condensable vapor and is at very high temperature. In the past, heat transfer associated with either a condensable mixture at low temperature or a noncondensable mixture at high temperature has been investigated. The former reduces to the classical problem of fog formation in, say, atmosphere where the rate of condensation is diffusion controlled (molecular or conductive diffusions). In the presence of noncondensable gases, heat transfer to a cooler boundary by this mechanism is known to be drastically reduced. In the latter case, where the high temperature mixture is noncondensable, radiative transfer may become dominant and a vast amount of existing literature exists on this class of problem. A fundamentally different type of problem of relevance to recent advances in open cycle MHD power plants and breeder reactor safety is considered. In the advanced coal-fired power plant using MHD as a topping cycle, a condensable mixture is encountered at temperatures of 2000 to 3000 0 . Condensation of the vaporized slag and seed materials at such a high temperature can take place in the MHD generator channel as well as in the radiant boiler. Similarly, in breeder reactor accident analyses involving hypothetical core disruptive accidents, a UO 2 vapor mixture at 400 0 K or higher is often considered. Since the saturation temperature of UO 2 at one atmosphere is close to 4000 0 K, condensation is also likely at a very high temperature. Accordingly, an objective of the present work is to provide an understanding of heat transfer and condensation mechanics insystems containing a high temperature condensable mixture. The results of the study show that, when a high temperature mixture is in contact with a cooler surface, a thermal boundary layer develops rapidly because of intensive radiative cooling from the mixture

  5. Lack of dependence on resonant error field of locked mode island size in ohmic plasmas in DIII-D

    Science.gov (United States)

    La Haye, R. J.; Paz-Soldan, C.; Strait, E. J.

    2015-02-01

    DIII-D experiments show that fully penetrated resonant n = 1 error field locked modes in ohmic plasmas with safety factor q95 ≳ 3 grow to similar large disruptive size, independent of resonant error field correction. Relatively small resonant (m/n = 2/1) static error fields are shielded in ohmic plasmas by the natural rotation at the electron diamagnetic drift frequency. However, the drag from error fields can lower rotation such that a bifurcation results, from nearly complete shielding to full penetration, i.e., to a driven locked mode island that can induce disruption. Error field correction (EFC) is performed on DIII-D (in ITER relevant shape and safety factor q95 ≳ 3) with either the n = 1 C-coil (no handedness) or the n = 1 I-coil (with ‘dominantly’ resonant field pitch). Despite EFC, which allows significantly lower plasma density (a ‘figure of merit’) before penetration occurs, the resulting saturated islands have similar large size; they differ only in the phase of the locked mode after typically being pulled (by up to 30° toroidally) in the electron diamagnetic drift direction as they grow to saturation. Island amplification and phase shift are explained by a second change-of-state in which the classical tearing index changes from stable to marginal by the presence of the island, which changes the current density profile. The eventual island size is thus governed by the inherent stability and saturation mechanism rather than the driving error field.

  6. Effect of rapid thermal annealing on the composition of Au/Ti/Al/Ti ohmic contacts for GaN-based microdevices

    International Nuclear Information System (INIS)

    Redondo-Cubero, A.; Ynsa, M.D.; Romero, M.F.; Alves, L.C.; Muñoz, E.

    2013-01-01

    The homogeneity of Au/Ti/Al/Ti ohmic contacts for AlGaN/GaN devices was analyzed as a function of the thickness of the Ti barrier (30 nm 50 nm, although several compositional deficiencies were identified in the distribution maps obtained with the ion microprobe, including the formation of craters. A clear interplay between Ti and Au was found, suggesting the relevance of lateral flows during the rapid thermal annealing

  7. High temperature electronic gain device

    International Nuclear Information System (INIS)

    McCormick, J.B.; Depp, S.W.; Hamilton, D.J.; Kerwin, W.J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments is described. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube

  8. High Temperature Superconductor Resonator Detectors

    Data.gov (United States)

    National Aeronautics and Space Administration — High Temperature Superconductor (HTS) infrared detectors were studied for years but never matured sufficiently for infusion into instruments. Several recent...

  9. High temperature and high resolution uv photoelectron spectroscopy using supersonic molecular beams

    International Nuclear Information System (INIS)

    Wang, Lai-Sheng; Reutt-Robey, J.E.; Niu, B.; Lee, Y.T.; Shirley, D.A.

    1989-07-01

    A high temperature molecular beam source with electron bombardment heating has been built for high resolution photoelectron spectroscopic studies of high temperature species and clusters. This source has the advantages of: producing an intense, continuous, seeded molecular beam, eliminating the interference of the heating mechanism from the photoelectron measurement. Coupling the source with our hemispherical electron energy analyzer, we can obtain very high resolution HeIα (584 angstrom) photoelectron spectra of high temperature species. Vibrationally-resolved photoelectron spectra of PbSe, As 2 , As 4 , and ZnCl 2 are shown to demonstrate the performance of the new source. 25 refs., 8 figs., 1 tab

  10. High temperature superconductivity the road to higher critical temperature

    CERN Document Server

    Uchida, Shin-ichi

    2015-01-01

    This book presents an overview of material-specific factors that influence Tc and give rise to diverse Tc values for copper oxides and iron-based high- Tc superconductors on the basis of more than 25 years of experimental data, to most of which the author has made important contributions. The book then explains why both compounds are distinct from others with similar crystal structure and whether or not one can enhance Tc, which in turn gives a hint on the unresolved pairing mechanism. This is an unprecedented new approach to the problem of high-temperature superconductivity and thus will be inspiring to both specialists and non-specialists interested in this field.   Readers will receive in-depth information on the past, present, and future of high-temperature superconductors, along with special, updated information on what the real highest Tc values are and particularly on the possibility of enhancing Tc for each member material, which is important for application. At this time, the highest Tc has not been...

  11. Structural instabilities of high temperature alloys and their use in advanced high temperature gas cooled reactors

    International Nuclear Information System (INIS)

    Schuster, H.; Ennis, P.J.; Nickel, H.; Czyrska-Filemonowicz, A.

    1989-01-01

    High-temperature, iron-nickel and nickel based alloys are the candidate heat exchanger materials for advanced high temperature gas-cooled reactors supplying process heat for coal gasification, where operation temperatures can reach 850-950 deg. C and service lives of more than 100,000 h are necessary. In the present paper, typical examples of structural changes which occur in two representative alloys (Alloy 800 H, Fe-32Ni-20Cr and Alloy 617, Ni-22Cr-12Co-9Mo-1Al) during high temperature exposure will be given and the effects on the creep rupture properties discussed. At service temperatures, precipitation of carbides occurs which has a significant effect on the creep behaviour, especially in the early stages of creep when the precipitate particles are very fine. During coarsening of the carbides, carbides at grain boundaries restrict grain boundary sliding which retards the development of creep damage. In the service environments, enhanced carbide precipitation may occur due to the ingress of carbon from the environment (carburization). Although the creep rate is not adversely affected, the ductility of the carburized material at low and intermediate temperatures is very low. During simulated service exposures, the formation of surface corrosion scales, the precipitation of carbides and the formation of internal oxides below the surface leads to depletion of the matrix in the alloying elements involved in the corrosion processes. In thin-walled tubes the depletion of Cr due to Cr 2 O 3 formation on the surface can lead to a loss of creep strength. An additional depletion effect resulting from environmental-metal reactions is the loss of carbon (decarburization) which may occur in specific environments. The compositions of the cooling gases which decarburize the material have been determined; they are to be avoided during reactor operation

  12. Mechanical properties of concrete for power reactor at high temperatures

    International Nuclear Information System (INIS)

    Kawase, Kiyotaka; Tanaka, Hitoshi; Nakano, Masayuki

    1985-01-01

    The purpose of this study is to investigate the mechanical properties of concrete for power reactor at high temperature. This paper presents the creep behavior of concrete at high temperature and the cause by which a specified aggregate is broken at a specified high temperature. The creep coefficient at high temperature is smaller than that at ordinary temperature. (author)

  13. High temperature oxidation behavior of TiAl-based intermetallics

    International Nuclear Information System (INIS)

    Stroosnijder, M.F.; Sunderkoetter, J.D.; Haanappel, V.A.C.

    1996-01-01

    TiAl-based intermetallic compounds have attracted considerable interest as structural materials for high-temperature applications due to their low density and substantial mechanical strength at high temperatures. However, one major drawback hindering industrial application arises from the insufficient oxidation resistance at temperatures beyond 700 C. In the present contribution some general aspects of high temperature oxidation of TiAl-based intermetallics will be presented. This will be followed by a discussion of the influence of alloying elements, in particular niobium, and of the effect of nitrogen in the oxidizing environment on the high temperature oxidation behavior of such materials

  14. High temperature superconductor cable concepts for fusion magnets

    CERN Document Server

    AUTHOR|(CDS)2078397

    2013-01-01

    Three concepts of high temperature superconductor cables carrying kA currents (RACC, CORC and TSTC) are investigated, optimized and evaluated in the scope of their applicability as conductor in fusion magnets. The magnetic field and temperature dependence of the cables is measured; the thermal expansion and conductivity of structure, insulation and filling materials are investigated. High temperature superconductor winding packs for fusion magnets are calculated and compared with corresponding low temperature superconductor cases.

  15. High Temperature Electrostrictive Ceramics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — TRS Technologies proposes to develop high temperature electrostrictors from bismuth-based ferroelectrics. These materials will exhibit high strain and low loss in...

  16. HTGR fuel behavior at very high temperature

    International Nuclear Information System (INIS)

    Kashimura, Satoru; Ogawa, Touru; Fukuda, Kousaku; Iwamoto, Kazumi

    1986-03-01

    Fuel behavior at very high temperature simulating abnormal transient of the reactor operation and accidents have been investigated on TRISO coating LEU oxide particle fuels at JAERI. The test simulating the abnormal transient was carried out by irradiation of loose coated particles above 1600 deg C. The irradiation test indicated that particle failure was principally caused by kernel migration. For simulation of the core heat-up accident, two experiments of out-of-pile heating were made. Survival temperature limits were measured and fuel performance at very high temperature were investigated by the heatings. Study on the fuel behavior under reactivity initiated accident was made by NSRR(Nuclear Safety Research Reactor) pulse irradiation, where maximum temperature was higher than 2800 deg C. It was found in the pulse irradiation experiments that the coated particles incorporated in the compacts did not so severely fail unlike the loose coated particles at ultra high temperature above 2800 deg C. In the former particles UO 2 material at the center of the kernel vaporized, leaving a spherical void. (author)

  17. High-temperature morphology of stepped gold surfaces

    International Nuclear Information System (INIS)

    Bilalbegovic, G.; Tosatti, E.; Ercolessi, F.

    1992-04-01

    Molecular dynamics simulations with a classical many-body potential are used to study the high-temperature stability of stepped non-melting metal surfaces. We have studied in particular the Au(111) vicinal surfaces in the (M+1, M-1, M) family and the Au(100) vicinals in the (M, 1, 1) family. Some vicinal orientations close to the non-melting Au(111) surface become unstable close to the bulk melting temperature and facet into a mixture of crystalline (111) regions and localized surface-melted regions. On the contrary, we do not find high-temperature faceting for vicinals close to Au(100), also a non-melting surface. These (100) vicinal surfaces gradually disorder with disappearance of individual steps well below the bulk melting temperature. We have also studied the high-temperature stability of ledges formed by pairs of monoatomic steps of opposite sign on the Au(111) surface. It is found that these ledges attract each other, so that several of them merge into one larger ledge, whose edge steps then act as a nucleation site for surface melting. (author). 43 refs, 8 figs

  18. Viscoelastic creep of high-temperature concrete

    International Nuclear Information System (INIS)

    Pfeiffer, P.A.; Marchertas, A.H.; Bazant, Z.P.

    1985-01-01

    Presented in this report is the analytical model for analysis of high temperature creep response of concrete. The creep law used is linear (viscoelastic), the temperature and moisture effects on the creep rate and also aging are included. Both constant and transient temperature as well as constant and transient moisture conditions are considered. Examples are presented to correlate experimental data with parameters of the analytical model by the use of a finite element scheme

  19. High Temperature Electro-Mechanical Devices For Nuclear Applications

    International Nuclear Information System (INIS)

    Robertson, D.

    2010-01-01

    Nuclear power plants require a number of electro-mechanical devices, for example, Control Rod Drive Mechanisms (CRDM's) to control the raising and lowering of control rods and Reactor Coolant Pumps (RCP's) to circulate the primary coolant. There are potential benefits in locating electro-mechanical components in areas of the plant with high ambient temperatures. One such benefit is the reduced need to make penetrations in pressure vessels leading to simplified plant design and improved inherent safety. The feature that limits the ambient temperature at which most electrical machines may operate is the material used for the electrical insulation of the machine windings. Conventional electrical machines generally use polymer-based insulation that limits the ambient temperature they can operate in to below 200 degrees Celsius. This means that when a conventional electrical machine is required to operate in a hot area it must be actively cooled necessitating additional systems. This paper presents data gathered during investigations undertaken by Rolls-Royce into the design of high temperature electrical machines. The research was undertaken at Rolls-Royce's University Technology Centre in Advanced Electrical Machines and Drives at Sheffield University. Rolls- Royce has also been investigating high temperature wire and encapsulants and latterly techniques to provide high temperature insulation to terminations. Rolls-Royce used the experience gained from these tests to produce a high temperature electrical linear actuator at sizes representative of those used in reactor systems. This machine was tested successfully at temperatures equivalent to those found inside the reactor vessel of a pressurised water reactor through a full series of operations that replicated in service duty. The paper will conclude by discussing the impact of the findings and potential electro-mechanical designs that may utilise such high temperature technologies. (authors)

  20. D III-D divertor target heat flux measurements during Ohmic and neutral beam heating

    International Nuclear Information System (INIS)

    Hill, D.N.; Petrie, T.; Mahdavi, M.A.; Lao, L.; Howl, W.

    1988-01-01

    Time resolved power deposition profiles on the D III-D divertor target plates have been measured for Ohmic and neutral beam injection heated plasmas using fast response infrared thermography (τ ≤ 150 μs). Giant Edge Localized Modes have been observed which punctuate quiescent periods of good H-mode confinement and deposit more than 5% of the stored energy of the core plasma on the divertor armour tiles on millisecond time-scales. The heat pulse associated with these events arrives approximately 0.5 ms earlier on the outer leg of the divertor relative to the inner leg. The measured power deposition profiles are displaced relative to the separatrix intercepts on the target plates, and the peak heat fluxes are a function of core plasma density. (author). Letter-to-the-editor. 11 refs, 7 figs