WorldWideScience

Sample records for high temperature epitaxy

  1. Epitaxial heterojunctions of oxide semiconductors and metals on high temperature superconductors

    Science.gov (United States)

    Vasquez, Richard P. (Inventor); Hunt, Brian D. (Inventor); Foote, Marc C. (Inventor)

    1994-01-01

    Epitaxial heterojunctions formed between high temperature superconductors and metallic or semiconducting oxide barrier layers are provided. Metallic perovskites such as LaTiO3, CaVO3, and SrVO3 are grown on electron-type high temperature superconductors such as Nd(1.85)Ce(0.15)CuO(4-x). Alternatively, transition metal bronzes of the form A(x)MO(3) are epitaxially grown on electron-type high temperature superconductors. Also, semiconducting oxides of perovskite-related crystal structures such as WO3 are grown on either hole-type or electron-type high temperature superconductors.

  2. Microwave impedance of epitaxial high-temperature superconductor films

    International Nuclear Information System (INIS)

    Melkov, G.A.; Malyshev, V.Yu.; Bagada, A.V.

    1995-01-01

    In the 3 cm band dependences of the epitaxial HTS film surface resistance on the magnitude of ac and dc magnetic fields have been measured. YBa 2 Cu 3 O 7-σ films on sapphire were investigated. It was established that alternating magnetic field produces a stronger impact on the surface resistance than dc field. To explain experimental results the assumption is made that a HTS film is not an ideal superconductor and consists of series-connected sections of various types: sections of an ideal superconductor, sections of low and large resistance intragranular Josephson junctions, shunted by the ideal superconductor, and finally, sections of intergranular Josephson junctions few for epitaxial films. In these conditions the dependences of the surface resistance on dc magnetic field are caused by Abrikosov's vortices moving in ideal superconductive sections, and dependences on the amplitude of ac magnetic field are caused by switching of large resistance junctions to a low resistance state

  3. High-rate deposition of epitaxial layers for efficient low-temperature thin film epitaxial silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Oberbeck, L.; Schmidt, J.; Wagner, T.A.; Bergmann, R.B. [Stuttgart Univ. (Germany). Inst. of Physical Electronics

    2001-07-01

    Low-temperature deposition of Si for thin-film solar cells has previously been hampered by low deposition rates and low material quality, usually reflected by a low open-circuit voltage of these solar cells. In contrast, ion-assisted deposition produces Si films with a minority-carrier diffusion length of 40 {mu}m, obtained at a record deposition rate of 0.8 {mu}m/min and a deposition temperature of 650{sup o}C with a prebake at 810{sup o}C. A thin-film Si solar cell with a 20-{mu}m-thick epitaxial layer achieves an open-circuit voltage of 622 mV and a conversion efficiency of 12.7% without any light trapping structures and without high-temperature solar cell process steps. (author)

  4. Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

    2016-07-04

    Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

  5. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    International Nuclear Information System (INIS)

    Sandstrom, R.L.; Giess, E.A.; Gallagher, W.J.; Segmueller, A.; Cooper, E.I.; Chisholm, M.F.; Gupta, A.; Shinde, S.; Laibowitz, R.B.

    1988-01-01

    We demonstrate that lanthanum gallate (LaGaO 3 ) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa 2 Cu 3 O/sub 7-//sub x/, can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant (ε≅25) and low dielectric losses. Epitaxial YBa 2 Cu 3 O/sub 7-//sub x/ films grown on LaGaO 3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K

  6. Lanthanum gallate substrates for epitaxial high-temperature superconducting thin films

    Science.gov (United States)

    Sandstrom, R. L.; Giess, E. A.; Gallagher, W. J.; Segmuller, A.; Cooper, E. I.

    1988-11-01

    It is demonstrated that lanthanum gallate (LaGaO3) has considerable potential as an electronic substrate material for high-temperature superconducting films. It provides a good lattice and thermal expansion match to YBa2Cu3O(7-x), can be grown in large crystal sizes, is compatible with high-temperature film processing, and has a reasonably low dielectric constant and low dielectric losses. Epitaxial YBa2Cu3O(7-x) films grown on LaGaO3 single-crystal substrates by three techniques have zero resistance between 87 and 91 K.

  7. Epitaxial YBa2Cu3O7 films on rolled-textured metals for high temperature superconducting applications

    International Nuclear Information System (INIS)

    Norton, D.P.; Park, C.; Prouteau, C.

    1998-04-01

    The epitaxial growth of high temperature superconducting (HTS) films on rolled-textured metal represents a viable approach for long-length superconducting tapes. Epitaxial, 0.5 microm thick YBa 2 Cu 3 O 7 (YBCO) films with critical current densities, J c , greater than 1 MA/cm 2 have been realized on rolled-textured (001) Ni tapes with yttria-stabilized zirconia (YSZ)/CeO 2 oxide buffer layers. This paper describes the synthesis using pulsed-laser deposition (PLD) of epitaxial oxide buffer layers on biaxially-textured metal that comprise the so-called rolling-assisted biaxially-textured substrates (RABiTs trademark). The properties of the buffer and YBa 2 Cu 3 O 7 films on rolled-textured Ni are discussed, with emphasis given to the crystallographic and microstructural properties that determine the superconducting properties of these multilayer structures

  8. Nucleation of two-dimensional islands on Si (111) during high-temperature epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Sitnikov, S. V., E-mail: sitnikov@isp.nsc.ru; Kosolobov, S. S.; Latyshev, A. V. [Russian Academy of Sciences, Institute of Semiconductor Physics, Siberian Branch (Russian Federation)

    2017-02-15

    The process of two-dimensional island nucleation at the surface of ultra large Si (111) during hightemperature epitaxial growth is studied by in situ ultrahigh-vacuum reflection electron microscopy. The critical terrace size D{sub crit}, at which a two-dimensional island is nucleated in the center, is measured in the temperature range 900–1180°C at different silicon fluxes onto the surface. It is found that the parameter D{sub crit}{sup 2} is a power function of the frequency of island nucleation, with the exponent χ = 0.9 ± 0.05 in the entire temperature range under study. It is established that the kinetics of nucleus formation is defined by the diffusion of adsorbed silicon atoms at temperatures of up to 1180°C and the minimum critical nucleus size corresponds to 12 silicon atoms.

  9. Epitaxial growth of high temperature superconductors by cathodic sputtering I: thin films of YBaCuO

    International Nuclear Information System (INIS)

    Navacerrada, M.A.; Sefrioui, Z.; Arias, D.; Varela, M.; Loos, G.; Leon, C.; Lucia, M.L.; Santamaria, J.; Sanchez-Quesada, F.

    1998-01-01

    High quality c-oriented YBa 2 Cu 3 O 7 -x thin films have been grown on SrTiO 3 (100)substrates by high pressure sputtering in pure oxygen atmosphere. Low angle X-ray diffraction and atomic force microscopy were performed on films less than 250 angstrom thick showing a plenitude better than one unit cell. Moreover, the structural characterization by means of X ray φ scans showed that growth is epitaxial. The critical temperature has been measured by different ways and was always in the range 89.5-90.5K. the resistance transition is sharper than 1K and the mutual inductance response always shows magnetic losses peaks narrower than 0.3K. Critical current densities are in excess of 10''''6 angstrom/cm''''2 at 77K. (Author) 8 refs

  10. Growth mechanisms of plasma-assisted molecular beam epitaxy of green emission InGaN/GaN single quantum wells at high growth temperatures

    International Nuclear Information System (INIS)

    Yang, W. C.; Wu, C. H.; Tseng, Y. T.; Chiu, S. Y.; Cheng, K. Y.

    2015-01-01

    The results of the growth of thin (∼3 nm) InGaN/GaN single quantum wells (SQWs) with emission wavelengths in the green region by plasma-assisted molecular beam epitaxy are present. An improved two-step growth method using a high growth temperature up to 650 °C is developed to increase the In content of the InGaN SQW to 30% while maintaining a strong luminescence intensity near a wavelength of 506 nm. The indium composition in InGaN/GaN SQW grown under group-III-rich condition increases with increasing growth temperature following the growth model of liquid phase epitaxy. Further increase in the growth temperature to 670 °C does not improve the photoluminescence property of the material due to rapid loss of indium from the surface and, under certain growth conditions, the onset of phase separation

  11. Spin transport at high temperatures in epitaxial Heusler alloy/n-GaAs lateral spin valves

    Science.gov (United States)

    Peterson, Timothy A.; Christie, Kevin D.; Patel, Sahil J.; Crowell, Paul A.; Palmstrøm, Chris J.

    2015-03-01

    We report on electrical injection and detection of spin accumulation in ferromagnet/ n-GaAs lateral spin-valve devices, observed up to and above room temperature. The ferromagnet in these measurements is the Heusler alloy Co2FeSi, and the semiconductor channel is GaAs doped at 3 ×1016 cm-3. The spin signal is enhanced by operating the detection contact under forward bias. The enhancement originates from drift effects at low-temperatures and an increase of the detection efficiency at all temperatures. The detector bias dependence of the observed spin-valve signal is interpreted by taking into account the quantum well (QW) which forms in the degenerately doped region immediately behind the Schottky tunnel barrier. In particular, we believe the QW is responsible for the minority spin accumulation (majority spin current) under large forward bias. The spin diffusion length and lifetime are determined by measuring the separation dependence of the non-local spin valve signal in a family of devices patterned by electron beam lithography. A spin diffusion length of 700 nm and lifetime of 46 picoseconds are found at a temperature of 295 K. This work was supported by the NSF under DMR-1104951, the NSF MRSEC program and C-SPIN, a SRC STARNET center sponsored by MARCO and DARPA.

  12. Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Del Río-De Santiago, A.; Méndez-García, V.H. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Martínez-Velis, I.; Casallas-Moreno, Y.L. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); López-Luna, E. [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico); Yu Gorbatchev, A. [IICO-UASLP, Av. Karakorum 1470, Lomas 4a. Sección, San Luis Potosí, S.L.P. 78210, México (Mexico); López-López, M. [Physics Department, CINVESTAV-IPN, Apdo. Postal 14470 D. F. México, México (Mexico); Cruz-Hernández, E., E-mail: esteban.cruz@uaslp.mx [CIACyT-UASLP, Sierra Leona Av. # 550, Lomas 2a Secc, San Luis Potosí, S.L.P. 78210, México (Mexico)

    2015-04-01

    Highlights: • The formation of different kind of nanostructures in GaMnAs layers depending on Mn concentration at relative HT-MBE is reported. In this Mn% range, it is found the formation of nanogrooves, nanoleaves, and nanowires. • It is shown the progressive photoluminescence transitions from purely GaAsMn zinc blende (for Mn% = 0.01) to a mixture of zinc blende and wurtzite GaAsMn (for Mn% = 0.2). • A critical thickness for the Mn catalyst effect was determined by RHEED. - Abstract: In the present work, we report on molecular beam epitaxy growth of Mn-doped GaAs films at the relatively high temperature (HT) of 530 °C. We found that by increasing the Mn atomic percent, Mn%, from 0.01 to 0.2, the surface morphology of the samples is strongly influenced and changes from planar to corrugated for Mn% values from 0.01 to 0.05, corresponding to nanostructures on the surface with dimensions of 200–300 nm and with the shape of leave, to nanowire-like structures for Mn% values above 0.05. From reflection high-energy electron diffraction patterns, we observed the growth mode transition from two- to three-dimensional occurring at a Mn% exceeding 0.05. The optical and electrical properties were obtained from photoluminescence (PL) and Hall effect measurements, respectively. For the higher Mn concentration, besides the Mn related transitions at approximately 1.41 eV, PL spectra sharp peaks are present between 1.43 and 1.49 eV, which we related to the coexistence of zinc blende and wurtzite phases in the nanowire-like structures of this sample. At Mn% of 0.04, an increase of the carrier mobility up to a value of 1.1 × 10{sup 3} cm{sup 2}/Vs at 77 K was found, then decreases as Mn% is further increased due to the strengthening of the ionized impurity scattering.

  13. High-temperature operation of self-assembled GaInNAs/GaAsN quantum-dot lasers grown by solid-source molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Liu, C.Y.; Yoon, S.F.; Sun, Z.Z.; Yew, K.C.

    2006-01-01

    Self-assembled GaInNAs/GaAsN single layer quantum-dot (QD) lasers grown using solid-source molecular-beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm 2 from a GaInNAs QD laser (50x1700 μm 2 ) at 10 deg. C. High-temperature operation up to 65 deg. C was also demonstrated from an unbonded GaInNAs QD laser (50x1060 μm 2 ), with high characteristic temperature of 79.4 K in the temperature range of 10-60 deg. C

  14. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

    KAUST Repository

    Singh, Devendra

    2017-08-24

    Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

  15. High resolution x-ray diffraction study of the substrate temperature and thickness dependent microstructure of reactively sputtered epitaxial ZnO films

    KAUST Repository

    Singh, Devendra; Kumar, Ravi; Ganguli, Tapas; Major, Syed S

    2017-01-01

    Epitaxial ZnO films were grown on c-sapphire by reactive sputtering of zinc target in Ar-O2 mixture. High resolution X-ray diffraction measurements were carried out to obtain lateral and vertical coherence lengths, crystallite tilt and twist, micro-strain and densities of screw and edge dislocations in epilayers of different thickness (25 - 200 nm) and those grown at different temperatures (100 - 500 °C). phgr-scans indicate epitaxial growth in all the cases, although epilayers grown at lower substrate temperatures (100 °C and 200 °C) and those of smaller thickness (25 nm and 50 nm) display inferior microstructural parameters. This is attributed to the dominant presence of initially grown strained 2D layer and subsequent transition to an energetically favorable mode. With increase in substrate temperature, the transition shifts to lower thickness and growth takes place through the formation of 2D platelets with intermediate strain, over which 3D islands grow. Consequently, 100 nm thick epilayers grown at 300 °C display the best microstructural parameters (micro-strain ~1.2 x 10-3, screw and edge dislocation densities ~1.5 x 1010 cm-2 and ~2.3 x 1011 cm-2, respectively). A marginal degradation of microstructural parameters is seen in epilayers grown at higher substrate temperatures, due to the dominance of 3D hillock type growth.

  16. Effects of AlN nucleation layers on the growth of AlN films using high temperature hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Balaji, M.; Claudel, A.; Fellmann, V.; Gélard, I.; Blanquet, E.; Boichot, R.; Pierret, A.

    2012-01-01

    Highlights: ► Growth of AlN Nucleation layers and its effect on high temperature AlN films quality were investigated. ► AlN nucleation layers stabilizes the epitaxial growth of AlN and improves the surface morphology of AlN films. ► Increasing growth temperature of AlN NLs as well as AlN films improves the structural quality and limits the formation of cracks. - Abstract: AlN layers were grown on c-plane sapphire substrates with AlN nucleation layers (NLs) using high temperature hydride vapor phase epitaxy (HT-HVPE). Insertion of low temperature NLs, as those typically used in MOVPE process, prior to the high temperature AlN (HT-AlN) layers has been investigated. The NLs surface morphology was studied by atomic force microscopy (AFM) and NLs thickness was measured by X-ray reflectivity. Increasing nucleation layer deposition temperature from 650 to 850 °C has been found to promote the growth of c-oriented epitaxial HT-AlN layers instead of polycrystalline layers. The growth of polycrystalline layers has been related to the formation of dis-oriented crystallites. The density of such disoriented crystallites has been found to decrease while increasing NLs deposition temperature. The HT-AlN layers have been characterized by X-ray diffraction θ − 2θ scan and (0 0 0 2) rocking curve measurement, Raman and photoluminescence spectroscopies, AFM and field emission scanning electron microscopy. Increasing the growth temperature of HT-AlN layers from 1200 to 1400 °C using a NL grown at 850 °C improves the structural quality as well as the surface morphology. As a matter of fact, full-width at half-maximum (FWHM) of 0 0 0 2 reflections was improved from 1900 to 864 arcsec for 1200 °C and 1400 °C, respectively. Related RMS roughness also found to decrease from 10 to 5.6 nm.

  17. Self-assembled GaInNAs/GaAsN quantum dot lasers: solid source molecular beam epitaxy growth and high-temperature operation

    Directory of Open Access Journals (Sweden)

    Yoon SF

    2006-01-01

    Full Text Available AbstractSelf-assembled GaInNAs quantum dots (QDs were grown on GaAs (001 substrate using solid-source molecular-beam epitaxy (SSMBE equipped with a radio-frequency nitrogen plasma source. The GaInNAs QD growth characteristics were extensively investigated using atomic-force microscopy (AFM, photoluminescence (PL, and transmission electron microscopy (TEM measurements. Self-assembled GaInNAs/GaAsN single layer QD lasers grown using SSMBE have been fabricated and characterized. The laser worked under continuous wave (CW operation at room temperature (RT with emission wavelength of 1175.86 nm. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. The lowest obtained threshold current density in this work is ∼1.05 kA/cm2from a GaInNAs QD laser (50 × 1,700 µm2 at 10 °C. High-temperature operation up to 65 °C was demonstrated from an unbonded GaInNAs QD laser (50 × 1,060 µm2, with high characteristic temperature of 79.4 K in the temperature range of 10–60 °C.

  18. Measurement of the high-temperature Seebeck coefficient of thin films by means of an epitaxially regrown thermometric reference material.

    Science.gov (United States)

    Ramu, Ashok T; Mages, Phillip; Zhang, Chong; Imamura, Jeffrey T; Bowers, John E

    2012-09-01

    The Seebeck coefficient of a typical thermoelectric material, silicon-doped InGaAs lattice-matched to InP, is measured over a temperature range from 300 K to 550 K. By depositing and patterning a thermometric reference bar of silicon-doped InP adjacent to a bar of the material under test, temperature differences are measured directly. This is in contrast to conventional two-thermocouple techniques that subtract two large temperatures to yield a small temperature difference, a procedure prone to errors. The proposed technique retains the simple instrumentation of two-thermocouple techniques while eliminating the critical dependence of the latter on good thermal contact. The repeatability of the proposed technique is demonstrated to be ±2.6% over three temperature sweeps, while the repeatability of two-thermocouple measurements is about ±5%. The improved repeatability is significant for reliable reporting of the ZT figure of merit, which is proportional to the square of the Seebeck coefficient. The accuracy of the proposed technique depends on the accuracy with which the high-temperature Seebeck coefficient of the reference material may be computed or measured. In this work, the Seebeck coefficient of the reference material, n+ InP, is computed by rigorous solution of the Boltzmann transport equation. The accuracy and repeatability of the proposed technique can be systematically improved by scaling, and the method is easily extensible to other material systems currently being investigated for high thermoelectric energy conversion efficiency.

  19. Physical-chemical and technological aspects of the preparation of think layers of the high temperature superconductors Bi-Sr-Ca-Cu-O by method of metal organic vapour phase epitaxy

    International Nuclear Information System (INIS)

    Stejskal, J.; Nevriva, M.; Leitner, J.

    1995-01-01

    The method of metal organic vapour phase epitaxy (MO VPE) was used for preparation of think layers of the high temperature superconductors Bi-Sr-Ca-Cu-O. The suitable chemical precursors (β-diketonates) on the literature data and of the own thermodynamic calculations were selected. The optimal thermodynamic data and thermodynamic stability of the prepared samples were determined

  20. High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

    International Nuclear Information System (INIS)

    Alexiev, D.; Butcher, K.S.A.

    1991-11-01

    Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

  1. Disorder in silicon films grown epitaxially at low temperature

    International Nuclear Information System (INIS)

    Schwarzkopf, J.; Selle, B.; Bohne, W.; Roehrich, J.; Sieber, I.; Fuhs, W.

    2003-01-01

    Homoepitaxial Si films were prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition on Si(100) substrates at temperatures of 325-500 deg. C using H 2 , Ar, and SiH 4 as process gases. The gas composition, substrate temperature, and substrate bias voltage were systematically varied to study the breakdown of epitaxial growth. Information from ion beam techniques, like Rutherford backscattering and heavy-ion elastic recoil detection analysis, was combined with transmission and scanning electron micrographs to examine the transition from ordered to amorphous growth. The results suggest that the breakdown proceeds in two stages: (i) highly defective but still ordered growth with a defect density increasing with increasing film thickness and (ii) formation of conically shaped amorphous precipitates. The hydrogen content is found to be directly related to the degree of disorder which acts as sink for excessive hydrogen. Only in almost perfect epitaxially grown films is the hydrogen level low, and an exponential tail of the H concentration into the crystalline substrate is observed as a result of the diffusive transport of hydrogen

  2. High-Temperature Growth of GaN and Al x Ga1- x N via Ammonia-Based Metalorganic Molecular-Beam Epitaxy

    Science.gov (United States)

    Billingsley, Daniel; Henderson, Walter; Doolittle, W. Alan

    2010-05-01

    The effect of high-temperature growth on the crystalline quality and surface morphology of GaN and Al x Ga1- x N grown by ammonia-based metalorganic molecular-beam epitaxy (NH3-MOMBE) has been investigated as a means of producing atomically smooth films suitable for device structures. The effects of V/III ratio on the growth rate and surface morphology are described herein. The crystalline quality of both GaN and AlGaN was found to mimic that of the GaN templates, with (002) x-ray diffraction (XRD) full-widths at half- maximum (FWHMs) of ~350 arcsec. Nitrogen-rich growth conditions have been found to provide optimal surface morphologies with a root-mean-square (RMS) roughness of ~0.8 nm, yet excessive N-rich environments have been found to reduce the growth rate and result in the formation of faceted surface pitting. AlGaN exhibits a decreased growth rate, as compared with GaN, due to increased N recombination as a result of the increased pyrolysis of NH3 in the presence of Al. AlGaN films grown directly on GaN templates exhibited Pendellösung x-ray fringes, indicating an abrupt interface and a planar AlGaN film. AlGaN films grown for this study resulted in an optimal RMS roughness of ~0.85 nm with visible atomic steps.

  3. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2014-02-01

    Full Text Available We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001 substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 108 cm−2 at 750 °C than that of the low temperature grown sample (1.1 × 109 cm−2 at 730 °C. A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  4. Absence of low temperature phase transitions and enhancement of ferroelectric transition temperature in highly strained BaTiO{sub 3} epitaxial films grown on MgO Substrates

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Satish; Kumar, Dhirendra; Sathe, V. G., E-mail: vasant@csr.res.in [UGC-DAE Consortium for Scientific Research, University Campus, Khandwa Road, Indore 452001 (India); Kumar, Ravi; Sharma, T. K. [Semiconductor Physics and Devices Lab, Raja Ramanna Centre for Advanced Technology, Indore 452013 (India)

    2015-04-07

    Recently, a large enhancement in the ferroelectric transition temperature of several oxides is reported by growing the respective thin films on appropriate substrates. This phenomenon is correlated with high residual strain in thin films often leading to large increase in the tetragonality of their crystal structure. However, such an enhancement of transition temperature is usually limited to very thin films of ∼10 nm thickness. Here, we report growth of fully strained epitaxial thin films of BaTiO{sub 3} of 400 nm thickness, which are coherently grown on MgO substrates by pulsed laser deposition technique. Conventional high resolution x-ray diffraction and also the reciprocal space map measurements confirm that the film is fully strained with in-plane tensile strain of 5.5% that dramatically increases the tetragonality to 1.05. Raman measurements reveal that the tetragonal to cubic structural phase transition is observed at 583 K, which results in an enhancement of ∼200 K. Furthermore, temperature dependent Raman studies on these films corroborate absence of all the low temperature phase transitions. Numerical calculations based on thermodynamical model predict a value of the transition temperature that is greater than 1500 °C. Our experimental results are therefore in clear deviation from the existing strain dependent phase diagrams.

  5. Magnetic state controllable critical temperature in epitaxial Ho/Nb bilayers

    Directory of Open Access Journals (Sweden)

    Yuanzhou Gu

    2014-04-01

    Full Text Available We study the magnetic properties of Ho thin films with different crystallinity (either epitaxial or non-epitaxial and investigate their proximity effects with Nb thin films. Magnetic measurements show that epitaxial Ho has large anisotropy in two different crystal directions in contrast to non-epitaxial Ho. Transport measurements show that the superconducting transition temperature (Tc of Nb thin films can be significantly suppressed at zero field by epitaxial Ho compared with non-epitaxial Ho. We also demonstrate a direct control over Tc by changing the magnetic states of the epitaxial Ho layer, and attribute the strong proximity effects to exchange interaction.

  6. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K., E-mail: hamaya@ee.es.osaka-u.ac.jp [Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama, Toyonaka 560-8531 (Japan)

    2016-01-28

    We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

  7. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R.; Storm, David F.; Meyer, David J.; Zhang, Weidong; Brown, Elliott R.

    2016-01-01

    AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm 2 and a peak-to-valley current ratio of ≈1.15 across different sizes.

  8. Highly repeatable room temperature negative differential resistance in AlN/GaN resonant tunneling diodes grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Growden, Tyler A.; Fakhimi, Parastou; Berger, Paul R., E-mail: pberger@ieee.org [Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States); Storm, David F.; Meyer, David J. [U.S. Naval Research Laboratory, Washington, DC 20375 (United States); Zhang, Weidong; Brown, Elliott R. [Departments of Physics and Electrical Engineering, Wright State University, Dayton, Ohio 45435 (United States)

    2016-08-22

    AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a ∼90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm{sup 2} and a peak-to-valley current ratio of ≈1.15 across different sizes.

  9. Plasmas for the low-temperature growth of high-quality GaN films by molecular beam epitaxy and remote plasma MOCVD

    Energy Technology Data Exchange (ETDEWEB)

    Losurdo, M.; Capezzuto, P.; Bruno, G. [Plasmachemistry Research Center, CNR, Bari (Italy); Namkoong, G.; Doolittle, W.A.; Brown, A.S. [Georgia Inst. of Tech., Atlanta (United States). School of Electrical and Computer Engineering, Microelectronic Research Center

    2002-03-16

    GaN heteroepitaxial growth on sapphire (0001) substrates was carried out by both radio-frequency (rf) remote plasma metalorganic chemical vapor deposition (RP-MOCVD) and molecular beam epitaxy (MBE). A multistep growth process including substrate plasma cleaning and nitridation, buffer growth, its subsequent annealing and epilayer growth was used. In order to achieve a better understanding of the GaN growth, in-situ real time investigation of the surface chemistry is performed for all the steps using the conventional reflection high-energy electron spectroscopy (RHEED) during the MBE process, while laser reflectance interferometry (LRI) and spectroscopic ellipsometry (SE), which do not require UHV conditions, are used for the monitoring of the RP-MOCVD process. The chemistry of the rf N{sub 2} plasma sapphire nitridation and its effect on the epilayer growth and quality are discussed in both MBE and RP-MOCVD. (orig.)

  10. Low-temperature epitaxy of silicon by electron beam evaporation

    Energy Technology Data Exchange (ETDEWEB)

    Gorka, B. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany); Dogan, P. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)], E-mail: pinar.dogan@hmi.de; Sieber, I.; Fenske, F.; Gall, S. [Hahn-Meitner-Institut Berlin, Kekulestr. 5, 12489 Berlin (Germany)

    2007-07-16

    In this paper we report on homoepitaxial growth of thin Si films at substrate temperatures T{sub s} = 500-650 deg. C under non-ultra-high vacuum conditions by using electron beam evaporation. Si films were grown at high deposition rates on monocrystalline Si wafers with (100), (110) and (111) orientations. The ultra-violet visible reflectance spectra of the films show a dependence on T{sub s} and on the substrate orientation. To determine the structural quality of the films in more detail Secco etch experiments were carried out. No etch pits were found on the films grown on (100) oriented wafers. However, on films grown on (110) and (111) oriented wafers different types of etch pits could be detected. Films were also grown on polycrystalline silicon (poly-Si) seed layers prepared by an Aluminum-Induced Crystallisation (AIC) process on glass substrates. Electron Backscattering Diffraction (EBSD) shows that the film growth proceeds epitaxially on the grains of the seed layer. But a considerably higher density of extended defects is revealed by Secco etch experiments.

  11. Systematic study on dynamic atomic layer epitaxy of InN on/in +c-GaN matrix and fabrication of fine-structure InN/GaN quantum wells: Role of high growth temperature

    Science.gov (United States)

    Yoshikawa, Akihiko; Kusakabe, Kazuhide; Hashimoto, Naoki; Hwang, Eun-Sook; Imai, Daichi; Itoi, Takaomi

    2016-12-01

    The growth kinetics and properties of nominally 1-ML (monolayer)-thick InN wells on/in +c-GaN matrix fabricated using dynamic atomic layer epitaxy (D-ALEp) by plasma-assisted molecular beam epitaxy were systematically studied, with particular attention given to the effects of growth temperature. Attention was also given to how and where the ˜1-ML-thick InN layers were frozen or embedded on/in the +c-GaN matrix. The D-ALEp of InN on GaN was a two-stage process; in the 1st stage, an "In+N" bilayer/monolayer was formed on the GaN surface, while in the 2nd, this was capped by a GaN barrier layer. Each process was monitored in-situ using spectroscopic ellipsometry. The target growth temperature was above 620 °C and much higher than the upper critical epitaxy temperature of InN (˜500 °C). The "In+N" bilayer/monolayer tended to be an incommensurate phase, and the growth of InN layers was possible only when they were capped with a GaN layer. The InN layers could be coherently inserted into the GaN matrix under self-organizing and self-limiting epitaxy modes. The growth temperature was the most dominant growth parameter on both the growth process and the structure of the InN layers. Reflecting the inherent growth behavior of D-ALEp grown InN on/in +c-GaN at high growth temperature, the embedded InN layers in the GaN matrix were basically not full-ML in coverage, and the thickness of sheet-island-like InN layers was essentially either 1-ML or 2-ML. It was found that these InN layers tended to be frozen at the step edges on the GaN and around screw-type threading dislocations. The InN wells formed type-I band line-up heterostructures with GaN barriers, with exciton localization energies of about 300 and 500 meV at 15 K for the 1-ML and 2-ML InN wells, respectively.

  12. Seed layer technique for high quality epitaxial manganite films

    Directory of Open Access Journals (Sweden)

    P. Graziosi

    2016-08-01

    Full Text Available We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  13. High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

    Energy Technology Data Exchange (ETDEWEB)

    Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

    2000-07-01

    Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

  14. High-mobility BaSnO{sub 3} grown by oxide molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; Zhang, Jack Y.; Cain, Tyler A.; Stemmer, Susanne, E-mail: stemmer@mrl.ucsb.edu [Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)

    2016-01-01

    High-mobility perovskite BaSnO{sub 3} films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO{sub 3} films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO{sub x}. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO{sub 3}. We demonstrate room temperature electron mobilities of 150 cm{sup 2} V{sup −1} s{sup −1} in films grown on PrScO{sub 3}. The results open up a wide range of opportunities for future electronic devices.

  15. Growth of high purity semiconductor epitaxial layers by liquid phase ...

    Indian Academy of Sciences (India)

    Unknown

    semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

  16. Self-assembled InAs quantum dots formed by molecular beam epitaxy at low temperature and postgrowth annealing

    NARCIS (Netherlands)

    Zhan, H.H.; Nötzel, R.; Hamhuis, G.J.; Eijkemans, T.J.; Wolter, J.H.

    2003-01-01

    Self-assembled InAs quantum dots are grown at low temperature (LT) by molecular beam epitaxy (MBE) on GaAs substrates. The growth is in situ monitored by reflection high-energy electron diffraction, and ex situ evaluated by atomic force microscopy for the morphological properties, and by

  17. Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

    Science.gov (United States)

    Zhu, Zhongyunshen; Song, Yuxin; Zhang, Zhenpu; Sun, Hao; Han, Yi; Li, Yaoyao; Zhang, Liyao; Xue, Zhongying; Di, Zengfeng; Wang, Shumin

    2017-09-01

    We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of ˜180 °C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six ⟨110⟩ growth orientations were observed on Ge (110) by the VSS growth at ˜180 °C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.

  18. Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

    Energy Technology Data Exchange (ETDEWEB)

    Shimomoto, Kazuma; Ueno, Kohei [Institute of Industrial Science, University of Tokyo (Japan); Kobayashi, Atsushi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Department of Applied Chemistry, University of Tokyo (Japan); Ohta, Jitsuo [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Oshima, Masaharu [Department of Applied Chemistry, University of Tokyo (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Fujioka, Hiroshi [Institute of Industrial Science, University of Tokyo (Japan); Kanagawa Academy of Science and Technology (KAST), Takatsu-ku, Kawasaki (Japan); Core Research for Evolutional Science and Technology, Japan Science and Technology Corporation (JST-CREST), Tokyo (Japan); Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi [Mitsubishi Chemical Group, Science and Technology Research Center, Higashi-Mamiana, Ushiku-shi, Ibaraki (Japan)

    2009-05-15

    The authors have grown high-quality m -plane In{sub 0.36}Ga{sub 0.64}N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In{sub 0.36}Ga{sub 0.64}N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Room-temperature epitaxial growth of high-quality m-plane InGaN films on ZnO substrates

    International Nuclear Information System (INIS)

    Shimomoto, Kazuma; Ueno, Kohei; Kobayashi, Atsushi; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi; Amanai, Hidetaka; Nagao, Satoru; Horie, Hideyoshi

    2009-01-01

    The authors have grown high-quality m -plane In 0.36 Ga 0.64 N (1 anti 100) films on ZnO (1 anti 100) substrates at room temperature (RT) by pulsed laser deposition (PLD) and have investigated their structural properties. m-plane InGaN films grown on ZnO substrates at RT possess atomically flat surfaces with stepped and terraced structures, indicating that the film growth proceeds in a two-dimensional mode. X-ray diffraction measurements have revealed that the m-plane InGaN films grow without phase separation reactions at RT. The full-width at half-maximum values of the 1 anti 100 X-ray rocking curves of films with X-ray incident azimuths perpendicular to the c- and a-axis are 88 arcsec and 78 arcsec, respectively. Reciprocal space-mapping has revealed that a 50 nm thick m-plane In 0.36 Ga 0.64 N film grows coherently on the ZnO substrate, which can probably explain the low defect density that is observed in the film. (copyright 2009 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

    Science.gov (United States)

    Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

    2017-01-03

    Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

  1. Epitaxial growth of higher transition-temperature VO2 films on AlN/Si

    Directory of Open Access Journals (Sweden)

    Tetiana Slusar

    2016-02-01

    Full Text Available We report the epitaxial growth and the mechanism of a higher temperature insulator-to-metal-transition (IMT of vanadium dioxide (VO2 thin films synthesized on aluminum nitride (AlN/Si (111 substrates by a pulsed-laser-deposition method; the IMT temperature is TIMT ≈ 350 K. X-ray diffractometer and high resolution transmission electron microscope data show that the epitaxial relationship of VO2 and AlN is VO2 (010 ‖ AlN (0001 with VO2 [101] ‖   AlN   [ 2 1 ̄ 1 ̄ 0 ] zone axes, which results in a substrate-induced tensile strain along the in-plane a and c axes of the insulating monoclinic VO2. This strain stabilizes the insulating phase of VO2 and raises TIMT for 10 K higher than TIMT single crystal ≈ 340 K in a bulk VO2 single crystal. Near TIMT, a resistance change of about four orders is observed in a thick film of ∼130 nm. The VO2/AlN/Si heterostructures are promising for the development of integrated IMT-Si technology, including thermal switchers, transistors, and other applications.

  2. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-08-31

    We report the growth and characterization of III-nitride ternary thin films (Al{sub x}Ga{sub 1−x}N, In{sub x}Al{sub 1−x}N and In{sub x}Ga{sub 1−x}N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures.

  3. Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

    International Nuclear Information System (INIS)

    Nepal, Neeraj; Anderson, Virginia R.; Hite, Jennifer K.; Eddy, Charles R.

    2015-01-01

    We report the growth and characterization of III-nitride ternary thin films (Al x Ga 1−x N, In x Al 1−x N and In x Ga 1−x N) at ≤ 500 °C by plasma assisted atomic layer epitaxy (PA-ALE) over a wide stoichiometric range including the range where phase separation has been an issue for films grown by molecular beam epitaxy and metal organic chemical vapor deposition. The composition of these ternaries was intentionally varied through alterations in the cycle ratios of the III-nitride binary layers (AlN, GaN, and InN). By this digital alloy growth method, we are able to grow III-nitride ternaries by PA-ALE over nearly the entire stoichiometry range including in the spinodal decomposition region (x = 15–85%). These early efforts suggest great promise of PA-ALE at low temperatures for addressing miscibility gap challenges encountered with conventional growth methods and realizing high performance optoelectronic and electronic devices involving ternary/binary heterojunctions, which are not currently possible. - Highlights: • III-N ternaries grown at ≤ 500 °C by plasma assisted atomic layer epitaxy • Growth of InGaN and AlInN in the spinodal decomposition region (15–85%) • Epitaxial, smooth and uniform III-N film growth at low temperatures

  4. Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

    2007-07-01

    Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

  5. Effect of growth temperature on the epitaxial growth of ZnO on GaN by ALD

    Science.gov (United States)

    Särkijärvi, Suvi; Sintonen, Sakari; Tuomisto, Filip; Bosund, Markus; Suihkonen, Sami; Lipsanen, Harri

    2014-07-01

    We report on the epitaxial growth of ZnO on GaN template by atomic layer deposition (ALD). Diethylzinc (DEZn) and water vapour (H2O) were used as precursors. The structure and the quality of the grown ZnO layers were studied with scanning electron microscope (SEM), X-ray diffraction (XRD), photoluminescence (PL) measurements and positron annihilation spectroscopy. The ZnO films were confirmed epitaxial, and the film quality was found to improve with increasing deposition temperature in the vicinity of the threshold temperature of two dimensional growth. We conclude that high quality ZnO thin films can be grown by ALD. Interestingly only separate Zn-vacancies were observed in the films, although ZnO thin films typically contain fairly high density of surface pits and vacancy clusters.

  6. Temperature and coverage effects on the stability of epitaxial silicene on Ag(111) surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Hongsheng; Han, Nannan; Zhao, Jijun, E-mail: zhao_jijun@hotmail.com

    2017-07-01

    Highlights: • Chemical potential phase diagrams of silicene/Ag(111) at varied temperatures. • The priorities of various silicene phases in experiments are explained. • A proper experimental condition to obtain homogeneous 4 × 4 silicene is recommended. - Abstract: Silicene, the single layer of silicon atoms arranged in a honeycomb lattice, has been synthesized in recent experiments and attracted significant attentions. Silicene is promising in future nanoelectronic devices due to its outstanding electronic properties. In experiments, however, different silicene superstructures coexist on Ag(111) substrate. For the device applications, homogenous silicene sheet with large scale and high quality is highly desired. Here, for the first time, we investigate both the temperature and the coverage effects on the thermal stability of epitaxial silicene on Ag(111) surface by ab initio molecular dynamics simulations. The relationship between the stability of various silicene superstructures and the growth conditions, including temperature and coverage of silicon atoms, is revealed by plotting the chemical potential phase diagram of silicene on Ag(111) surfaces at different temperatures. Our results are helpful for understanding the observed diversity of silicene phases on Ag(111) surfaces and provide some useful guidance for the synthesis of homogenous silicene phase in experiments.

  7. Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

    Science.gov (United States)

    Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

    2018-06-01

    Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

  8. Low temperature epitaxy of Ge-Sb-Te films on BaF{sub 2} (111) by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Thelander, E., E-mail: erik.thelander@iom-leipzig.de; Gerlach, J. W.; Ross, U.; Lotnyk, A.; Rauschenbach, B. [Leibniz-Institut für Oberflächenmodifizierung e.V., Leipzig 04318 (Germany)

    2014-12-01

    Pulsed laser deposition was employed to deposit epitaxial Ge{sub 2}Sb{sub 2}Te{sub 5}-layers on the (111) plane of BaF{sub 2} single crystal substrates. X-ray diffraction measurements show a process temperature window for epitaxial growth between 85 °C and 295 °C. No crystalline growth is observed for lower temperatures, whereas higher temperatures lead to strong desorption of the film constituents. The films are of hexagonal structure with lattice parameters consistent with existing models. X-ray pole figure measurements reveal that the films grow with one single out-of-plane crystal orientation, but rotational twin domains are present. The out-of-plane epitaxial relationship is determined to be Ge{sub 2}Sb{sub 2}Te{sub 5}(0001) || BaF{sub 2}(111), whereas the in-plane relationship is characterized by two directions, i.e., Ge{sub 2}Sb{sub 2}Te{sub 5} [-12-10] || BaF{sub 2}[1-10] and Ge{sub 2}Sb{sub 2}Te{sub 5}[1-210] || BaF{sub 2}[1-10]. Aberration-corrected high-resolution scanning transmission electron microscopy was used to resolve the local atomic structure and confirm the hexagonal structure of the films.

  9. Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy

    International Nuclear Information System (INIS)

    Tchernycheva, M; Harmand, J C; Patriarche, G; Travers, L; Cirlin, G E

    2006-01-01

    Molecular beam epitaxial growth of GaAs nanowires using Au particles as a catalyst was investigated. Prior to the growth during annealing, Au alloyed with Ga coming from the GaAs substrate, and melted. Phase transitions of the resulting particles were observed in situ by reflection high-energy electron diffraction (RHEED). The temperature domain in which GaAs nanowire growth is possible was determined. The lower limit of this domain (320 deg. C) is close to the observed catalyst solidification temperature. Below this temperature, the catalyst is buried by GaAs growth. Above the higher limit (620 deg. C), the catalyst segregates on the surface with no significant nanowire formation. Inside this domain, the influence of growth temperature on the nanowire morphology and crystalline structure was investigated in detail by scanning electron microscopy and transmission electron microscopy. The correlation of the nanowire morphology with the RHEED patterns observed during the growth was established. Wurtzite GaAs was found to be the dominant crystal structure of the wires

  10. Boron, arsenic and phosphorus dopant incorporation during low temperature low pressure silicon epitaxial growth

    International Nuclear Information System (INIS)

    Borland, J.O.; Thompson, T.; Tagle, V.; Benzing, W.

    1987-01-01

    Submicron silicon epitaxial structures with very abrupt epi/substrate transition widths have been realized through the use of low temperature silicon epitaxial growth techniques. At these low temperature and low pressure epitaxial growth conditions there is minimal, if any, dopant diffusion from the substrate into the epilayer during deposition. The reincorporation of autodoped dopant as well as the incorporation of intentional dopant can be a trade-off at low temperatures and low pressures. For advanced CMOS and Bi-CMOS technologies, five to six orders of magnitude change in concentration levels are desirable. In this investigation, all of the epitaxial depositions were carried out in an AMC-7810 epi-reactor with standard jets for a turbulent mixing system, and using a modified center inject configuration to achieve a single pass laminar flow system. To simulate the reincorporation of various autodoped dopant, the authors ran a controlled dopant flow of 100 sccm for each of the three dopants (boron, phosphorus and arsenic) to achieve the controlled background dopant level in the reactor gas stream

  11. High temperature interface superconductivity

    International Nuclear Information System (INIS)

    Gozar, A.; Bozovic, I.

    2016-01-01

    Highlight: • This review article covers the topic of high temperature interface superconductivity. • New materials and techniques used for achieving interface superconductivity are discussed. • We emphasize the role played by the differences in structure and electronic properties at the interface with respect to the bulk of the constituents. - Abstract: High-T_c superconductivity at interfaces has a history of more than a couple of decades. In this review we focus our attention on copper-oxide based heterostructures and multi-layers. We first discuss the technique, atomic layer-by-layer molecular beam epitaxy (ALL-MBE) engineering, that enabled High-T_c Interface Superconductivity (HT-IS), and the challenges associated with the realization of high quality interfaces. Then we turn our attention to the experiments which shed light on the structure and properties of interfacial layers, allowing comparison to those of single-phase films and bulk crystals. Both ‘passive’ hetero-structures as well as surface-induced effects by external gating are discussed. We conclude by comparing HT-IS in cuprates and in other classes of materials, especially Fe-based superconductors, and by examining the grand challenges currently laying ahead for the field.

  12. Molecular-beam epitaxy growth of high-performance midinfrared diode lasers

    International Nuclear Information System (INIS)

    Turner, G.W.; Choi, H.K.; Calawa, D.R.

    1994-01-01

    Recent advances in the performance of GaInAsSb/AlGaAsSb quantum-well diode lasers have been directly related to improvements in the quality of the molecular-beam epitaxy (MBE)-grown epitaxial layers. These improvements have been based on careful measurement and control of lattice matching and intentional strain, changes in shutter sequencing at interfaces, and a generally better understanding of the growth of Sb-based epitaxial materials. By using this improved MBE-grown material, significantly enhanced performance has been obtained for midinfrared lasers. These lasers, which are capable of ∼2-μm emission at room temperature, presently exhibit threshold current densities of 143 A/cm 2 , continuous wave powers of 1.3 W, and diffraction-limited powers of 120 mW. Such high-performance midinfrared diode lasers are of interest for a wide variety of applications, including eye-safe laser radar, remote sensing of atmospheric contaminants and wind turbulence, laser surgery, and pumping of solid-state laser media. 12 refs., 3 figs

  13. The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

    Science.gov (United States)

    Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

    2018-03-01

    We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

  14. Analysis of temperature profiles and the mechanism of silicon substrate plastic deformation under epitaxial growth

    International Nuclear Information System (INIS)

    Mirkurbanov, H.A.; Sazhnev, S.V.; Timofeev, V.N.

    2004-01-01

    Full text: Thermal treatment of silicon wafers holds one of the major place in the manufacturing of semi-conductor devices. Thermal treatment includes wafer annealing, thermal oxidation, epitaxial growing etc. Quality of wafers in the high-temperature processes (900-1200 deg C) is estimated by the density of structural defects, including areas of plastic deformation, which are shown as the slip lines appearance. Such areas amount to 50-60 % of total wafer surface. The plastic deformation is caused by the thermal stresses. Experimental and theoretical researches allowed to determine thermal balance and to construct a temperature profiles throughout the plate surface. Thermal stresses are caused by temperature drop along the radius of a wafer and at the basic peripheral ring. The threshold temperature drop between center f a wafer and its peripherals (ΔT) for slip lines appearance, amounts to 15-17 deg. C. At the operating temperature of 900-1200 deg. C and ΔT>20 deg. C, the stresses reach the silicon yield point. According to the results of the researches of structure and stress profiles in a wafer, the mechanism of slip lines formation has been constructed. A source of dislocations is the rear broken layer of thickness 8-10 microns, formed after polishing. The micro-fissures with a density 10 5 -10 6 cm -2 are the sources of dislocations. Dislocations move on a surface of a wafer into a slip plane (111). On a wafer surface with orientation (111) it is possible to allocate zones where the tangential stress vector is most favorably directed with respect to a slip plane leaving on a surface, i.e. the shift stresses are maximal in the slip plane. The way to eliminate plastic deformation is to lower the temperature drop to a level of <15 deg. C and elimination of the broken layer in wafer

  15. High electron mobility in Ga(In)NAs films grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Miyashita, Naoya; Ahsan, Nazmul; Monirul Islam, Muhammad; Okada, Yoshitaka; Inagaki, Makoto; Yamaguchi, Masafumi

    2012-01-01

    We report the highest mobility values above 2000 cm 2 /Vs in Si doped GaNAs film grown by molecular beam epitaxy. To understand the feature of the origin which limits the electron mobility in GaNAs, temperature dependences of mobility were measured for high mobility GaNAs and referential low mobility GaInNAs. Temperature dependent mobility for high mobility GaNAs is similar to the GaAs case, while that for low mobility GaInNAs shows large decrease in lower temperature region. The electron mobility of high quality GaNAs can be explained by intrinsic limiting factor of random alloy scattering and extrinsic factor of ionized impurity scattering.

  16. Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

    Energy Technology Data Exchange (ETDEWEB)

    El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

    2008-08-15

    The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

  17. Low-temperature ballistic transport in nanoscale epitaxial graphene cross junctions

    OpenAIRE

    Weingart, S.; Bock, C.; Kunze, U.; Speck, F.; Seyller, Th.; Ley, L.

    2009-01-01

    We report on the observation of inertial-ballistic transport in nanoscale cross junctions fabricated from epitaxial graphene grown on SiC(0001). Ballistic transport is indicated by a negative bend resistance of R12,43 ~ 170 ohm which is measured in a non-local, four-terminal configuration at 4.2 K and which vanishes as the temperature is increased above 80 K.

  18. Temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact

    International Nuclear Information System (INIS)

    Hu, C.Y.; Qin, Z.X.; Feng, Z.X.; Chen, Z.Z.; Ding, Z.B.; Yang, Z.J.; Yu, T.J.; Hu, X.D.; Yao, S.D.; Zhang, G.Y.

    2006-01-01

    The temperature dependent diffusion and epitaxial behavior of oxidized Au/Ni/p-GaN ohmic contact were studied with Rutherford backscattering spectroscopy/channeling (RBS/C) and synchrotron X-ray diffraction (XRD). It is found that the Au diffuses to the surface of p-GaN to form an epitaxial structure on p-GaN after annealing at 450 deg. C. At the same time, the O diffuses to the metal-semiconductor interface and forms NiO. Both of them are suggested to be responsible for the sharp decrease in the specific contact resistance (ρ c ) at 450 deg. C. At 500 deg. C, the epitaxial structure of Au develops further and the O also diffuses deeper into the interface. As a result, the ρ c reaches the lowest value at this temperature. However, when annealing temperature reaches 600 deg. C, part or all of the interfacial NiO is detached from the p-GaN and diffuses out, which cause the ρ c to increase greatly

  19. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R., E-mail: smitha2@ohio.edu [Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

    2014-04-15

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  20. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

    Science.gov (United States)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

    2014-04-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  1. Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy

    International Nuclear Information System (INIS)

    Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R.

    2014-01-01

    Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without

  2. Accompanying growth and room-temperature ferromagnetism of η-Mn3N2 thin films by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yu, Fengmei; Liu, Yajing; Yang, Mei; Wu, Shuxiang; Zhou, Wenqi; Li, Shuwei

    2013-01-01

    η-phase manganese nitride films have been grown on LaAlO 3 (100) and LaSrAlO 4 (001) substrates by using plasma-assisted molecular beam epitaxy. On the basis of reflective high energy electron diffraction, X-ray diffraction, and X-ray photoemission spectroscopy, it is confirmed that two types of η-Mn 3 N 2 with different lattice constants coexist in the films due to the lattice mismatches between the Mn 3 N 2 films and the substrates. Magnetic properties of the films were characterized by a superconducting quantum interference device magnetometer at room temperature. The Mn 3 N 2 films on LaAlO 3 substrate were found to have room-temperature ferromagnetism. Two potential interaction mechanisms are proposed regarding the origin of the observed ferromagnetism. - Highlights: ► The films of two types of η-Mn 3 N 2 have been grown by molecular beam epitaxy. ► Mn 3 N 2 A and Mn 3 N 2 B coexisted in the films on LaAlO 3 and LaSrAlO 4 . ► The room-temperature ferromagnetism of the Mn 3 N 2 films on LaAlO 3 was obtained

  3. Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO3

    Science.gov (United States)

    Tellekamp, M. Brooks; Shank, Joshua C.; Goorsky, Mark S.; Doolittle, W. Alan

    2016-12-01

    Lithium niobate is a multi-functional material with wide reaching applications in acoustics, optics, and electronics. Commercial applications for lithium niobate require high crystalline quality currently limited to bulk and ion sliced material. Thin film lithium niobate is an attractive option for a variety of integrated devices, but the research effort has been stagnant due to poor material quality. Both lattice matched and mismatched lithium niobate are grown by molecular beam epitaxy and studied to understand the role of substrate and temperature on nucleation conditions and material quality. Growth on sapphire produces partially coalesced columnar grains with atomically flat plateaus and no twin planes. A symmetric rocking curve shows a narrow linewidth with a full width at half-maximum (FWHM) of 8.6 arcsec (0.0024°), which is comparable to the 5.8 arcsec rocking curve FWHM of the substrate, while the film asymmetric rocking curve is 510 arcsec FWHM. These values indicate that the individual grains are relatively free of long-range disorder detectable by x-ray diffraction with minimal measurable tilt and twist and represents the highest structural quality epitaxial material grown on lattice mismatched sapphire without twin planes. Lithium niobate is also grown on lithium tantalate producing high quality coalesced material without twin planes and with a symmetric rocking curve of 193 arcsec, which is nearly equal to the substrate rocking curve of 194 arcsec. The surface morphology of lithium niobate on lithium tantalate is shown to be atomically flat by atomic force microscopy.

  4. A Hall probe technique for characterizing high-temperature superconductors

    International Nuclear Information System (INIS)

    Zhang, J.; Sheldon, P.; Ahrenkiel, R.K.

    1992-01-01

    Thin-film GaAs Hall probes were fabricated by molecular beam epitaxy technology. A contactless technique was developed to characterize thin-film, high-temperature superconducting (HTSC) materials. The Hall probes detected the ac magnetic flux penetration through the high-temperature superconducting materials. The Hall detector has advantages over the mutual inductance magnetic flux detector

  5. Strain induced room temperature ferromagnetism in epitaxial magnesium oxide thin films

    Energy Technology Data Exchange (ETDEWEB)

    Jin, Zhenghe; Kim, Ki Wook [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Nori, Sudhakar; Lee, Yi-Fang; Narayan, Jagdish [Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States); Kumar, D. [Department of Mechanical Engineering, North Carolina A & T State University, Greensboro, North Carolina 27411 (United States); Wu, Fan [Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08540 (United States); Prater, J. T. [Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709 (United States)

    2015-10-28

    We report on the epitaxial growth and room-temperature ferromagnetic properties of MgO thin films deposited on hexagonal c-sapphire substrates by pulsed laser deposition. The epitaxial nature of the films has been confirmed by both θ-2θ and φ-scans of X-ray diffraction pattern. Even though bulk MgO is a nonmagnetic insulator, we have found that the MgO films exhibit ferromagnetism and hysteresis loops yielding a maximum saturation magnetization up to 17 emu/cc and large coercivity, H{sub c} = 1200 Oe. We have also found that the saturation magnetization gets enhanced and that the crystallization degraded with decreased growth temperature, suggesting that the origin of our magnetic coupling could be point defects manifested by the strain in the films. X-ray (θ-2θ) diffraction peak shift and strain analysis clearly support the presence of strain in films resulting from the presence of point defects. Based on careful investigations using secondary ion mass spectrometer and X-ray photoelectron spectroscopy studies, we have ruled out the possibility of the presence of any external magnetic impurities. We discuss the critical role of microstructural characteristics and associated strain on the physical properties of the MgO films and establish a correlation between defects and magnetic properties.

  6. Room temperature Ultraviolet B emission from InAlGaN films synthesized by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Roberts, A. T. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [CNR-NANOTEC, Istituto di Nanotecnologia, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Laboratory, Army Aviation and Missile RD& E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2015-09-28

    Thin films of the wide bandgap quaternary semiconductor In{sub x}Al{sub y}Ga{sub (1−x−y)}N with low In (x = 0.01–0.05) and high Al composition (y = 0.40–0.49) were synthesized on GaN templates by plasma-assisted molecular beam epitaxy. High-resolution X-ray diffraction was used to correlate the strain accommodation of the films to composition. Room temperature ultraviolet B (280 nm–320 nm) photoluminescence intensity increased with increasing In composition, while the Stokes shift remained relatively constant. The data suggest a competition between radiative and non-radiative recombination occurs for carriers, respectively, localized at centers produced by In incorporation and at dislocations produced by strain relaxation.

  7. Substrate temperature dependence of ZnTe epilayers grown on GaAs(0 0 1) by molecular beam epitaxy

    Science.gov (United States)

    Zhao, Jie; Zeng, Yiping; Liu, Chao; Li, Yanbo

    2010-04-01

    ZnTe thin films have been grown on GaAs(0 0 1) substrates at different temperatures with constant Zn and Te beam equivalent pressures (BEPs) by molecular beam epitaxy (MBE). In situ reflection high-energy electron diffraction (RHEED) observation indicates that two-dimensional (2D) growth mode can be established after around one-minute three-dimensional (3D) nucleation by increasing the substrate temperature to 340 °C. We found that Zn desorption from the ZnTe surface is much greater than that of Te at higher temperatures, and estimated the Zn sticking coefficient by the evolution of growth rate. The Zn sticking coefficient decreases from 0.93 to 0.58 as the temperature is elevated from 320 to 400 °C. The ZnTe epilayer grown at 360 °C displays the narrowest full-width at half-maximum (FWHM) of 660 arcsec from (0 0 4) reflection in double-crystal X-ray rocking curve (DCXRC) measurements. The surface morphology of ZnTe epilayers is strongly dependent on the substrate temperature, and the root-mean-square (RMS) roughness diminishes drastically with the increase in temperature.

  8. Epitaxial growth of new half-metallic ferromagnet 'zinc-blende CrAs' and the substrate temperature dependence

    International Nuclear Information System (INIS)

    Mizuguchi, Masaki; Akinaga, Hiro; Manago, Takashi; Ono, Kanta; Oshima, Masaharu; Shirai, Masafumi

    2002-01-01

    Epitaxial zinc-blende CrAs thin films were grown at two different temperatures. CrAs (2 nm) grown at 200 deg. C formed plateau-shapes, whereas CrAs (2 nm) grown at 300 deg. C formed dispersed dots. The thin film grown at 200 deg. C showed ferromagnetic behavior at room temperature, and the Curie temperature was estimated to be over 400 K

  9. Low temperature step-graded InAlAs/GaAs metamorphic buffer layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Shang, X Z; Wu, S D; Liu, C; Wang, W X; Guo, L W; Huang, Q; Zhou, J M

    2006-01-01

    Low-temperature step-graded InAlAs metamorphic buffer layers on GaAs substrate grown by molecular beam epitaxy were investigated. The strain relaxation and the composition of the top InAlAs layer were determined by high-resolution triple-axis x-ray diffraction measurements, which show that the top InAlAs layer is nearly fully relaxed. Surface morphology was observed by reflection high-energy electron diffraction pattern and atomic force microscopy. Under a selected range of growth parameters, the root mean square surface roughness of the sample grown at 380 deg. C is 0.802 nm, which has the smallest value compared with those of other samples. Furthermore, The ω-2θ and ω scans of the triple-axis x-ray diffraction, and photoluminescence show the sample grown at 380 deg. C has better crystalline quality. With decreasing As overpressure at this growth temperature, crystalline quality became poor and could not maintain two dimensional growth with increasing overpressure. The carrier concentrations and Hall mobilities of the InAlAs/ InGaAs/GaAs MM-HEMT structure on low-temperature step-graded InAlAs metamorphic buffer layers grown in optimized conditions are high enough to make devices

  10. Molecular beam epitaxy for high-performance Ga-face GaN electron devices

    International Nuclear Information System (INIS)

    Kaun, Stephen W; Speck, James S; Wong, Man Hoi; Mishra, Umesh K

    2013-01-01

    Molecular beam epitaxy (MBE) has emerged as a powerful technique for growing GaN-based high electron mobility transistor (HEMT) epistructures. Over the past decade, HEMT performance steadily improved, mainly through the optimization of device fabrication processes. Soon, HEMT performance will be limited by the crystalline quality of the epistructure. MBE offers heterostructure growth with highly abrupt interfaces, low point defect concentrations, and very low carbon and hydrogen impurity concentrations. Minimizing parasitic leakage pathways and resistances is essential in the growth of HEMTs for high-frequency and high-power applications. Through growth on native substrates with very low threading dislocation density, low-leakage HEMTs with very low on-resistance can be realized. Ga-rich plasma-assisted MBE (PAMBE) has been studied extensively, and it is clear that this technique has inherent limitations, including a high density of leakage pathways and a very small growth parameter space. Relatively new MBE growth techniques—high-temperature N-rich PAMBE and ammonia-based MBE—are being developed to circumvent the shortcomings of Ga-rich PAMBE. (invited review)

  11. Supersymmetry at high temperatures

    International Nuclear Information System (INIS)

    Das, A.; Kaku, M.

    1978-01-01

    We investigate the properties of Green's functions in a spontaneously broken supersymmetric model at high temperatures. We show that, even at high temperatures, we do not get restoration of supersymmetry, at least in the one-loop approximation

  12. Enhanced growth of highly lattice-mismatched CdSe on GaAs substrates by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wang, Jyh-Shyang; Tsai, Yu-Hsuan; Wang, Hsiao-Hua; Ke, Han-Xiang; Tong, Shih-Chang; Yang, Chu-Shou; Wu, Chih-Hung; Shen, Ji-Lin

    2013-01-01

    This work demonstrates the improvement of the molecular beam epitaxial growth of zinc-blende CdSe on (0 0 1) GaAs substrate with a large lattice mismatch by introducing a small amount of Te atoms. Exposing the growing surface to Te atoms changes the reflection high-energy electron diffraction pattern from spotty to streaky together with (2 × 1) surface reconstruction, and greatly reduces the full width at half maximum of the X-ray rocking curve and increases the integral intensity of room-temperature photoluminescence by a factor of about nine.

  13. EDITORIAL: Epitaxial graphene Epitaxial graphene

    Science.gov (United States)

    de Heer, Walt A.; Berger, Claire

    2012-04-01

    Graphene is widely regarded as an important new electronic material with interesting two-dimensional electron gas properties. Not only that, but graphene is widely considered to be an important new material for large-scale integrated electronic devices that may eventually even succeed silicon. In fact, there are countless publications that demonstrate the amazing applications potential of graphene. In order to realize graphene electronics, a platform is required that is compatible with large-scale electronics processing methods. It was clear from the outset that graphene grown epitaxially on silicon carbide substrates was exceptionally well suited as a platform for graphene-based electronics, not only because the graphene sheets are grown directly on electronics-grade silicon carbide (an important semiconductor in its own right), but also because these sheets are oriented with respect to the semiconductor. Moreover, the extremely high temperatures involved in production assure essentially defect-free and contamination-free materials with well-defined interfaces. Epitaxial graphene on silicon carbide is not a unique material, but actually a class of materials. It is a complex structure consisting of a reconstructed silicon carbide surface, which, for planar hexagonal silicon carbide, is either the silicon- or the carbon-terminated face, an interfacial carbon rich layer, followed by one or more graphene layers. Consequently, the structure of graphene films on silicon carbide turns out to be a rich surface-science puzzle that has been intensively studied and systematically unravelled with a wide variety of surface science probes. Moreover, the graphene films produced on the carbon-terminated face turn out to be rotationally stacked, resulting in unique and important structural and electronic properties. Finally, in contrast to essentially all other graphene production methods, epitaxial graphene can be grown on structured silicon carbide surfaces to produce graphene

  14. Nanoripple formation on GaAs (001) surface by reverse epitaxy during ion beam sputtering at elevated temperature

    Energy Technology Data Exchange (ETDEWEB)

    Chowdhury, Debasree; Ghose, Debabrata, E-mail: debabrata1.ghose@gmail.com

    2016-11-01

    Highlights: • GaAs (001) surfaces are sputtered by 1 keV Ar{sup +} at sample temperature of 450 °C. • Highly ordered defect-free ripples develop at near-normal incidence angles (θ ≈ 0–25{sup 0}). • Concurrent sample rotation does not alter the ripple orientation with respect to the ion beam. • At grazing incidence angles anisotropic structure is formed. • Concurrent sample rotation shows that the structure orientation depends on the beam direction. - Abstract: Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar{sup +} bombardment at target temperature of 450 °C for a wide range of incident angles. Highly ordered ripple formation driven by diffusion instability is evidenced at near normal incidence angles. Concurrent sample rotation shows that the ripple morphology and its orientation do not depend on the incident beam direction; rather they are determined by the symmetry of the crystal face.

  15. Diffusion-driven growth of nanowires by low-temperature molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Rueda-Fonseca, P.; Orrù, M. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Institut NEEL, F-38000 Grenoble (France); CEA, INAC, F-38000 Grenoble (France); Bellet-Amalric, E.; Robin, E. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, INAC, F-38000 Grenoble (France); Den Hertog, M.; Genuist, Y.; André, R.; Tatarenko, S.; Cibert, J., E-mail: joel.cibert@neel.cnrs.fr [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Institut NEEL, F-38000 Grenoble (France)

    2016-04-28

    With ZnTe as an example, we use two different methods to unravel the characteristics of the growth of nanowires (NWs) by gold-catalyzed molecular beam epitaxy at low temperature. In the first approach, CdTe insertions have been used as markers, and the nanowires have been characterized by scanning transmission electron microscopy, including geometrical phase analysis and energy dispersive electron spectrometry; the second approach uses scanning electron microscopy and the statistics of the relationship between the length of the tapered nanowires and their base diameter. Axial and radial growth are quantified using a diffusion-limited model adapted to the growth conditions; analytical expressions describe well the relationship between the NW length and the total molecular flux (taking into account the orientation of the effusion cells), and the catalyst-nanowire contact area. A long incubation time is observed. This analysis allows us to assess the evolution of the diffusion lengths on the substrate and along the nanowire sidewalls, as a function of temperature and deviation from stoichiometric flux.

  16. Growth temperature and dopant species effects on deep levels in Si grown by low temperature molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chung, Sung-Yong; Jin, Niu; Rice, Anthony T.; Berger, Paul R.; Yu, Ronghua; Fang, Z-Q.; Thompson, Phillip E.

    2003-01-01

    Deep-level transient spectroscopy measurements were performed in order to investigate the effects of substrate growth temperature and dopant species on deep levels in Si layers during low-temperature molecular beam epitaxial growth. The structures studied were n + -p junctions using B doping for the p layer and p + -n junctions using P doping for the n layer. While the density of hole traps H1 (0.38-0.41 eV) in the B-doped p layers showed a clear increase with decreasing growth temperature from 600 to 370 degree sign C, the electron trap density was relatively constant. Interestingly, the minority carrier electron traps E1 (0.42-0.45 eV) and E2 (0.257 eV), found in the B-doped p layers, are similar to the majority carrier electron traps E11 (0.48 eV) and E22 (0.269 eV) observed in P-doped n layers grown at 600 degree sign C. It is hypothesized that these dominating electron traps are associated with pure divacancy defects and are independent of the dopant species

  17. Epitaxial growth of zinc on ferritic steel under high current density electroplating conditions

    International Nuclear Information System (INIS)

    Greul, Thomas; Comenda, Christian; Preis, Karl; Gerdenitsch, Johann; Sagl, Raffaela; Hassel, Achim Walter

    2013-01-01

    Highlights: •EBSD of electroplated Zn on Fe or steel was performed. •Zn grows epitaxially on electropolished ferritic steel following Burger's orientation relation. •Surface deformation of steel leads to multiple electroplated zinc grains with random orientation. •Zn grows epitaxially even on industrial surfaces with little surface deformation. •Multiple zinc grains on one steel grain can show identical orientation relations. -- Abstract: The dependence of the crystal orientation of electrodeposited zinc of the grain orientation on ferritic steel substrate at high current density deposition (400 mA cm −2 ) during a pulse-plating process was investigated by means of EBSD (electron backscatter diffraction) measurements. EBSD-mappings of surface and cross-sections were performed on samples with different surface preparations. Furthermore an industrial sample was investigated to compare lab-coated samples with the industrial process. The epitaxial growth of zinc is mainly dependent on the condition of the steel grains. Deformation of steel grains leads to random orientation while zinc grows epitaxially on non-deformed steel grains even on industrial surfaces

  18. The origin of local strain in highly epitaxial oxide thin films.

    Science.gov (United States)

    Ma, Chunrui; Liu, Ming; Chen, Chonglin; Lin, Yuan; Li, Yanrong; Horwitz, J S; Jiang, Jiechao; Meletis, E I; Zhang, Qingyu

    2013-10-31

    The ability to control the microstructures and physical properties of hetero-epitaxial functional oxide thin films and artificial structures is a long-sought goal in functional materials research. Normally, only the lattice misfit between the film and the substrate is considered to govern the physical properties of the epitaxial films. In fact, the mismatch of film unit cell arrangement and the Surface-Step-Terrace (SST) dimension of the substrate, named as "SST residual matching", is another key factor that significantly influence the properties of the epitaxial film. The nature of strong local strain induced from both lattice mismatch and the SST residual matching on ferroelectric (Ba,Sr)TiO3 and ferromagnetic (La,Ca)MnO3 thin films are systematically investigated and it is demonstrated that this combined effect has a dramatic impact on the physical properties of highly epitaxial oxide thin films. A giant anomalous magnetoresistance effect (~10(10)) was achieved from the as-designed vicinal surfaces.

  19. Epitaxial effects in thin films of high-Tc cuprates with the K2NiF4 structure

    Science.gov (United States)

    Naito, Michio; Sato, Hisashi; Tsukada, Akio; Yamamoto, Hideki

    2018-03-01

    La2-xSrxCuO4 (LSCO) and La2-xBaxCuO4 (LBCO) have been recognized as the archetype materials of "hole-doped" high-Tc superconductors. Their crystal structures are relatively simple with a small number of constituent cation elements. In addition, the doping level can be varied by the chemical substitution over a wide range enough to obtain the full spectrum of doping-dependent electronic and magnetic properties. These attractive features have dedicated many researchers to thin-film growth of LSCO and LBCO. The critical temperature (Tc) of LSCO and LBCO is sensitive to strain as manifested by a positive pressure coefficient of Tc in bulk samples. In general, films are strained if they are grown on lattice-mismatched substrates (epitaxial strain). Early attempts (before 1997) at the growth of LSCO and LBCO films resulted in depressed Tc below 30 K as they were grown on a commonly used SrTiO3 substrate (in-plane lattice parameter asub = 3.905 Å): the in-plane lattice parameters of LSCO and LBCO are ≤3.80 Å, and hence tensile epitaxial strain is introduced. The situation was changed by the use of LaSrAlO4 substrates with a slightly shorter in-plane lattice constant (asub = 3.756 Å). On LaSrAlO4 substrates, the Tc reaches 45 K in La1.85Sr0.15CuO4, 47 K in La1.85Ba0.15CuO4, and 56 K in ozone-oxidized La2CuO4+δ films, substantially higher than the Tc's of the bulk compounds. The Tc increase in La1.85Sr0.15CuO4 films on LaSrAlO4 and decrease on SrTiO3 are semi-quantitatively in accord with the phenomenological estimations based on the anisotropic strain coefficients of Tc (dTc/dεi). In this review article, we describe the growth and properties of films of cuprates having the K2NiF4 structure, mainly focusing on the increase/decrease of Tc by epitaxial strain and quasi-stable phase formation by epitaxial stabilization. We further extract the structural and/or physical parameters controlling Tc toward microscopic understanding of the variation of Tc by epitaxial strain.

  20. High temperature refrigerator

    International Nuclear Information System (INIS)

    Steyert, W.A. Jr.

    1978-01-01

    A high temperature magnetic refrigerator is described which uses a Stirling-like cycle in which rotating magnetic working material is heated in zero field and adiabatically magnetized, cooled in high field, then adiabatically demagnetized. During this cycle the working material is in heat exchange with a pumped fluid which absorbs heat from a low temperature heat source and deposits heat in a high temperature reservoir. The magnetic refrigeration cycle operates at an efficiency 70% of Carnot

  1. High-temperature superconductivity

    International Nuclear Information System (INIS)

    Lynn, J.W.

    1990-01-01

    This book discusses development in oxide materials with high superconducting transition temperature. Systems with Tc well above liquid nitrogen temperature are already a reality and higher Tc's are anticipated. The author discusses how the idea of a room-temperature superconductor appears to be a distinctly possible outcome of materials research

  2. Highly Uniform Epitaxial ZnO Nanorod Arrays for Nanopiezotronics

    Directory of Open Access Journals (Sweden)

    Nagata T

    2009-01-01

    Full Text Available Abstract Highly uniform and c-axis-aligned ZnO nanorod arrays were fabricated in predefined patterns by a low temperature homoepitaxial aqueous chemical method. The nucleation seed patterns were realized in polymer and in metal thin films, resulting in, all-ZnO and bottom-contacted structures, respectively. Both of them show excellent geometrical uniformity: the cross-sectional uniformity according to the scanning electron micrographs across the array is lower than 2%. The diameter of the hexagonal prism-shaped nanorods can be set in the range of 90–170 nm while their typical length achievable is 0.5–2.3 μm. The effect of the surface polarity was also examined, however, no significant difference was found between the arrays grown on Zn-terminated and on O-terminated face of the ZnO single crystal. The transmission electron microscopy observation revealed the single crystalline nature of the nanorods. The current–voltage characteristics taken on an individual nanorod contacted by a Au-coated atomic force microscope tip reflected Schottky-type behavior. The geometrical uniformity, the designable pattern, and the electrical properties make the presented nanorod arrays ideal candidates to be used in ZnO-based DC nanogenerator and in next-generation integrated piezoelectric nano-electromechanical systems (NEMS.

  3. High quality atomically thin PtSe2 films grown by molecular beam epitaxy

    Science.gov (United States)

    Yan, Mingzhe; Wang, Eryin; Zhou, Xue; Zhang, Guangqi; Zhang, Hongyun; Zhang, Kenan; Yao, Wei; Lu, Nianpeng; Yang, Shuzhen; Wu, Shilong; Yoshikawa, Tomoki; Miyamoto, Koji; Okuda, Taichi; Wu, Yang; Yu, Pu; Duan, Wenhui; Zhou, Shuyun

    2017-12-01

    Atomically thin PtSe2 films have attracted extensive research interests for potential applications in high-speed electronics, spintronics and photodetectors. Obtaining high quality thin films with large size and controlled thickness is critical. Here we report the first successful epitaxial growth of high quality PtSe2 films by molecular beam epitaxy. Atomically thin films from 1 ML to 22 ML have been grown and characterized by low-energy electron diffraction, Raman spectroscopy and x-ray photoemission spectroscopy. Moreover, a systematic thickness dependent study of the electronic structure is revealed by angle-resolved photoemission spectroscopy (ARPES), and helical spin texture is revealed by spin-ARPES. Our work provides new opportunities for growing large size single crystalline films to investigate the physical properties and potential applications of PtSe2.

  4. Highly efficient high temperature electrolysis

    DEFF Research Database (Denmark)

    Hauch, Anne; Ebbesen, Sune; Jensen, Søren Højgaard

    2008-01-01

    High temperature electrolysis of water and steam may provide an efficient, cost effective and environmentally friendly production of H-2 Using electricity produced from sustainable, non-fossil energy sources. To achieve cost competitive electrolysis cells that are both high performing i.e. minimum...... internal resistance of the cell, and long-term stable, it is critical to develop electrode materials that are optimal for steam electrolysis. In this article electrolysis cells for electrolysis of water or steam at temperatures above 200 degrees C for production of H-2 are reviewed. High temperature...... electrolysis is favourable from a thermodynamic point of view, because a part of the required energy can be supplied as thermal heat, and the activation barrier is lowered increasing the H-2 production rate. Only two types of cells operating at high temperature (above 200 degrees C) have been described...

  5. High sensitive quasi freestanding epitaxial graphene gas sensor on 6H-SiC

    NARCIS (Netherlands)

    Iezhokin, I.; Offermans, P.; Brongersma, S.H.; Giesbers, A.J.M.; Flipse, C.F.J.

    2013-01-01

    We have measured the electrical response to NO2, N2, NH3, and CO for epitaxial graphene and quasi freestanding epitaxial graphene on 6H-SiC substrates. Quasi freestanding epitaxial graphene shows a 6 fold increase in NO2 sensitivity compared to epitaxial graphene. Both samples show a sensitivity

  6. Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

    Science.gov (United States)

    Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

    2016-11-24

    Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

  7. Highly c-axis oriented growth of GaN film on sapphire (0001 by laser molecular beam epitaxy using HVPE grown GaN bulk target

    Directory of Open Access Journals (Sweden)

    S. S. Kushvaha

    2013-09-01

    Full Text Available Growth temperature dependant surface morphology and crystalline properties of the epitaxial GaN layers grown on pre-nitridated sapphire (0001 substrates by laser molecular beam epitaxy (LMBE were investigated in the range of 500–750 °C. The grown GaN films were characterized using high resolution x-ray diffraction, atomic force microscopy (AFM, micro-Raman spectroscopy, and secondary ion mass spectroscopy (SIMS. The x-ray rocking curve full width at a half maximum (FWHM value for (0002 reflection dramatically decreased from 1582 arc sec to 153 arc sec when the growth temperature was increased from 500 °C to 600 °C and the value further decreased with increase of growth temperature up to 720 °C. A highly c-axis oriented GaN epitaxial film was obtained at 720 °C with a (0002 plane rocking curve FWHM value as low as 102 arc sec. From AFM studies, it is observed that the GaN grain size also increased with increasing growth temperature and flat, large lateral grains of size 200-300 nm was obtained for the film grown at 720 °C. The micro-Raman spectroscopy studies also exhibited the high-quality wurtzite nature of GaN film grown on sapphire at 720 °C. The SIMS measurements revealed a non-traceable amount of background oxygen impurity in the grown GaN films. The results show that the growth temperature strongly influences the surface morphology and crystalline quality of the epitaxial GaN films on sapphire grown by LMBE.

  8. Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

    Directory of Open Access Journals (Sweden)

    Chad A. Stephenson

    2016-12-01

    Full Text Available Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx offers a particularly interesting prospect. By using a precursor gas with a Ge4C core, C can be preferentially incorporated in substitutional sites, suppressing interstitial and C cluster defects. We present a method of reproducible and upscalable gas synthesis of tetrakis(germylmethane, or (H3Ge4C, followed by the design of a hybrid gas/solid-source molecular beam epitaxy system and subsequent growth of defect-free Ge1−xCx by molecular beam epitaxy (MBE. Secondary ion mass spectroscopy, transmission electron microscopy and contactless electroreflectance confirm the presence of carbon with very high crystal quality resulting in a decrease in the direct bandgap energy. This technique has broad applicability to growth of highly mismatched alloys by MBE.

  9. Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

    Science.gov (United States)

    Iwinska, Malgorzata; Piotrzkowski, Ryszard; Litwin-Staszewska, Elzbieta; Sochacki, Tomasz; Amilusik, Mikolaj; Fijalkowski, Michal; Lucznik, Boleslaw; Bockowski, Michal

    2017-01-01

    GaN crystals were grown by hydride vapor phase epitaxy (HVPE) and doped with C. The seeds were high-structural-quality ammonothermally crystallized GaN. The grown crystals were highly resistive at 296 K and of high structural quality. High-temperature Hall effect measurements revealed p-type conductivity and a deep acceptor level in the material with an activation energy of 1 eV. This is in good agreement with density functional theory calculations based on hybrid functionals as presented by the Van de Walle group. They obtained an ionization energy of 0.9 eV when C was substituted for N in GaN and acted as a deep acceptor.

  10. High-quality GaN epitaxially grown on Si substrate with serpentine channels

    Science.gov (United States)

    Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

    2018-06-01

    A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

  11. Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn{sub 4}N epitaxial thin film

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Xi; Shigematsu, Kei [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); Chikamatsu, Akira, E-mail: chikamatsu@chem.s.u-tokyo.ac.jp; Fukumura, Tomoteru [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Hirose, Yasushi; Hasegawa, Tetsuya [Department of Chemistry, The University of Tokyo, Tokyo 113-0033 (Japan); CREST, Japan Science and Technology Agency (JST), Tokyo 113-0033 (Japan); Kanagawa Academy of Science and Technology (KAST), Kawasaki 213-0012 (Japan)

    2014-08-18

    We report the electrical transport properties of ferrimagnetic Mn{sub 4}N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn{sub 4}N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m{sup 3}, which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

  12. Metallic transport and large anomalous Hall effect at room temperature in ferrimagnetic Mn4N epitaxial thin film

    International Nuclear Information System (INIS)

    Shen, Xi; Shigematsu, Kei; Chikamatsu, Akira; Fukumura, Tomoteru; Hirose, Yasushi; Hasegawa, Tetsuya

    2014-01-01

    We report the electrical transport properties of ferrimagnetic Mn 4 N (001) epitaxial thin films grown by pulsed laser deposition on MgO (001) substrates. The Mn 4 N thin films were tetragonally distorted with a ratio of out-of-plane to in-plane lattice constants of 0.987 and showed perpendicular magnetic anisotropy with an effective magnetic anisotropy constant of 0.16 MJ/m 3 , which is comparable with that of a recently reported molecular-beam-epitaxy-grown film. The thin films exhibited metallic transport with a room temperature resistivity of 125 μΩ cm in addition to a large anomalous Hall effect with a Hall angle tangent of 0.023.

  13. Quantum Nanostructures by Droplet Epitaxy

    OpenAIRE

    Somsak Panyakeow

    2009-01-01

    Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic...

  14. Continuous growth of low-temperature Si epitaxial layer with heavy phosphorous and boron doping using photoepitaxy

    International Nuclear Information System (INIS)

    Yamazaki, T.; Minakata, H.; Ito, T.

    1990-01-01

    The authors grew p + -n + silicon epitaxial layers, heavily doped with phosphorus and boron, continuously at 650 degrees C using low-temperature photoepitaxy. Then N + photoepitaxial layer with a phosphorus concentration above 10 17 cm -3 grown on p - substrate shows high-density surface pits, and as a result, poor crystal quality. However, when this n + photoepitaxial layer is grown continuously on a heavily boron-doped p + photoepitaxial layer, these surface pits are drastically decreased, disappearing completely above a hole concentration of 10 19 cm -3 in the p + photoepitaxial layer. The phosphorus activation ratio and electron Hall mobility in the heavily phosphorus-doped n + photoexpitaxial layer were also greatly improved. The authors investigated the cause of the surface pitting using a scanning transmission electron microscope, secondary ion mass spectroscopy, and energy-dispersive x-ray spectroscopy. They characterized the precipitation of phosphorus atoms on the crystal surface at the initial stage of the heavily phosphorus-doped n + photoexpitaxial layer growth

  15. Ultra-Shallow P+/N Junction Formation in Si Using Low Temperature Solid Phase Epitaxy Assisted with Laser Activation

    International Nuclear Information System (INIS)

    Hara, Shuhei; Tanaka, Yuki; Fukaya, Takumi; Matsumoto, Satoru; Suzuki, Toshiharu; Fuse, Genshu; Kudo, Toshio; Sakuragi, Susumu

    2008-01-01

    A combination of Ge pre-amorphization implantation (Ge-PAI), low-energy B implantation and laser annealing is a promising method to form highly-activated, abrupt and ultra-shallow junctions (USJ). In our previous report of IIT 2006, we succeeded in forming pn junctions less than 10 nm using non-melt double-pulsed green laser. However, a large leakage current under reverse bias was observed consequently due to residual defects in the implanted layer. In this study, a method to form USJ is proposed: a combination of low-temperature solid phase epitaxy and non-melt laser irradiation for B activation. Ge pre-amorphization implantation was performed at energy of 6 keV with a dose of 3x10 14 /cm 2 . Then B implantation was performed at energy of 0.2 keV with a dose of 1.2x10 15 /cm 2 . Samples were annealed at 400 deg. C for 10 h in nitrogen atmosphere. Subsequently, non-melt laser irradiation was performed at energy of 690 mJ/cm 2 and pulse duration of 100 ns with intervals of 300 ns. As a result, USJ around 10 nm with better crystallinity was successfully formed. And the leakage current of pn diodes was reduced significantly. Moreover, it is proven from secondary ion mass spectroscopy (SIMS) analysis that transient enhanced diffusion (TED) of B is specifically suppressed.

  16. SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

    Science.gov (United States)

    Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

    2018-01-01

    Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

  17. High temperature superconducting YBCO microwave filters

    Science.gov (United States)

    Aghabagheri, S.; Rasti, M.; Mohammadizadeh, M. R.; Kameli, P.; Salamati, H.; Mohammadpour-Aghdam, K.; Faraji-Dana, R.

    2018-06-01

    Epitaxial thin films of YBCO high temperature superconductor are widely used in telecommunication technology such as microwave filter, antenna, coupler and etc., due to their lower surface resistance and lower microwave loss than their normal conductor counterparts. Thin films of YBCO were fabricated by PLD technique on LAO substrate. Transition temperature and width were 88 K and 3 K, respectively. A filter pattern was designed and implemented by wet photolithography method on the films. Characterization of the filter at 77 K has been compared with the simulation results and the results for a made gold filter. Both YBCO and gold filters show high microwave loss. For YBCO filter, the reason may be due to the improper contacts on the feedlines and for gold filter, low thickness of the gold film has caused the loss increased.

  18. High temperature battery. Hochtemperaturbatterie

    Energy Technology Data Exchange (ETDEWEB)

    Bulling, M.

    1992-06-04

    To prevent heat losses of a high temperature battery, it is proposed to make the incoming current leads in the area of their penetration through the double-walled insulating housing as thermal throttle, particularly spiral ones.

  19. High temperature structural silicides

    International Nuclear Information System (INIS)

    Petrovic, J.J.

    1997-01-01

    Structural silicides have important high temperature applications in oxidizing and aggressive environments. Most prominent are MoSi 2 -based materials, which are borderline ceramic-intermetallic compounds. MoSi 2 single crystals exhibit macroscopic compressive ductility at temperatures below room temperature in some orientations. Polycrystalline MoSi 2 possesses elevated temperature creep behavior which is highly sensitive to grain size. MoSi 2 -Si 3 N 4 composites show an important combination of oxidation resistance, creep resistance, and low temperature fracture toughness. Current potential applications of MoSi 2 -based materials include furnace heating elements, molten metal lances, industrial gas burners, aerospace turbine engine components, diesel engine glow plugs, and materials for glass processing

  20. Epitaxial growth of rhenium with sputtering

    Energy Technology Data Exchange (ETDEWEB)

    Oh, Seongshik [National Institute of Standards and Technology, Boulder, CO 80305 (United States) and Department of Physics, University of Illinois, Urbana, IL 61801 (United States)]. E-mail: soh@boulder.nist.gov; Hite, Dustin A. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Cicak, K. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Osborn, Kevin D. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Simmonds, Raymond W. [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, Robert [University of California, Santa Barbara, CA 93106 (United States); Cooper, Ken B. [University of California, Santa Barbara, CA 93106 (United States); Steffen, Matthias [University of California, Santa Barbara, CA 93106 (United States); Martinis, John M. [University of California, Santa Barbara, CA 93106 (United States); Pappas, David P. [National Institute of Standards and Technology, Boulder, CO 80305 (United States)

    2006-02-21

    We have grown epitaxial Rhenium (Re) (0001) films on {alpha}-Al{sub 2}O{sub 3} (0001) substrates using sputter deposition in an ultra high vacuum system. We find that better epitaxy is achieved with DC rather than with RF sputtering. With DC sputtering, epitaxy is obtained with the substrate temperatures above 700 deg. C and deposition rates below 0.1 nm/s. The epitaxial Re films are typically composed of terraced hexagonal islands with screw dislocations, and island size gets larger with high temperature post-deposition annealing. The growth starts in a three dimensional mode but transforms into two dimensional mode as the film gets thicker. With a thin ({approx}2 nm) seed layer deposited at room temperature and annealed at a high temperature, the initial three dimensional growth can be suppressed. This results in larger islands when a thick film is grown at 850 deg. C on the seed layer. We also find that when a room temperature deposited Re film is annealed to higher temperatures, epitaxial features start to show up above {approx}600 deg. C, but the film tends to be disordered.

  1. High temperature reaction kinetics

    International Nuclear Information System (INIS)

    Jonah, C.D.; Beno, M.F.; Mulac, W.A.; Bartels, D.

    1985-01-01

    During the last year the dependence of the apparent rate of OD + CO on water pressure was measured at 305, 570, 865 and 1223 K. An explanation was found and tested for the H 2 O dependence of the apparent rate of OH(OD) + CO at high temperatures. The isotope effect for OH(D) with CO was determined over the temperature range 330 K to 1225 K. The reason for the water dependence of the rate of OH(OD) + CO near room temperatures has been investigated but no clear explanation has been found. 1 figure

  2. High-temperature superconductivity

    International Nuclear Information System (INIS)

    Ginzburg, V.L.

    1987-07-01

    After a short account of the history of experimental studies on superconductivity, the microscopic theory of superconductivity, the calculation of the control temperature and its possible maximum value are presented. An explanation of the mechanism of superconductivity in recently discovered superconducting metal oxide ceramics and the perspectives for the realization of new high-temperature superconducting materials are discussed. 56 refs, 2 figs, 3 tabs

  3. Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B., E-mail: galiev-galib@mail.ru [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Grekhov, M. M. [National Research Nuclear University “MEPhI” (Russian Federation); Kitaeva, G. Kh. [Moscow State University, Faculty of Physics (Russian Federation); Klimov, E. A.; Klochkov, A. N. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation); Kolentsova, O. S. [National Research Nuclear University “MEPhI” (Russian Federation); Kornienko, V. V.; Kuznetsov, K. A. [Moscow State University, Faculty of Physics (Russian Federation); Maltsev, P. P.; Pushkarev, S. S. [Russian Academy of Sciences, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)

    2017-03-15

    The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In{sub 0.53}Ga{sub 0.47}As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In{sub 0.53}Ga{sub 0.47}As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.

  4. High efficiency green/yellow and red InGaN/AlGaN nanowire light-emitting diodes grown by molecular beam epitaxy

    Directory of Open Access Journals (Sweden)

    M.R. Philip

    2017-06-01

    Full Text Available We report on the achievement of high efficiency green, yellow, and red InGaN/AlGaN dot-in-a-wire nanowire light-emitting diodes grown on Si(111 by molecular beam epitaxy. The peak emission wavelengths were altered by varying the growth conditions, including the substrate temperature, and In/Ga flux ratio. The devices demonstrate relatively high (>40% internal quantum efficiency at room temperature, relative to that measured at 5 K. Moreover, negligible blue-shift in peak emission spectrum associated with no efficiency droop was measured when injection current was driven up to 556 A/cm2.

  5. High temperature pipeline design

    Energy Technology Data Exchange (ETDEWEB)

    Greenslade, J.G. [Colt Engineering, Calgary, AB (Canada). Pipelines Dept.; Nixon, J.F. [Nixon Geotech Ltd., Calgary, AB (Canada); Dyck, D.W. [Stress Tech Engineering Inc., Calgary, AB (Canada)

    2004-07-01

    It is impractical to transport bitumen and heavy oil by pipelines at ambient temperature unless diluents are added to reduce the viscosity. A diluted bitumen pipeline is commonly referred to as a dilbit pipeline. The diluent routinely used is natural gas condensate. Since natural gas condensate is limited in supply, it must be recovered and reused at high cost. This paper presented an alternative to the use of diluent to reduce the viscosity of heavy oil or bitumen. The following two basic design issues for a hot bitumen (hotbit) pipeline were presented: (1) modelling the restart problem, and, (2) establishing the maximum practical operating temperature. The transient behaviour during restart of a high temperature pipeline carrying viscous fluids was modelled using the concept of flow capacity. Although the design conditions were hypothetical, they could be encountered in the Athabasca oilsands. It was shown that environmental disturbances occur when the fluid is cooled during shut down because the ground temperature near the pipeline rises. This can change growing conditions, even near deeply buried insulated pipelines. Axial thermal loads also constrain the design and operation of a buried pipeline as higher operating temperatures are considered. As such, strain based design provides the opportunity to design for higher operating temperature than allowable stress based design methods. Expansion loops can partially relieve the thermal stress at a given temperature. As the design temperature increase, there is a point at which above grade pipelines become attractive options, although the materials and welding procedures must be suitable for low temperature service. 3 refs., 1 tab., 10 figs.

  6. Chirped-pulse manipulated carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs

    International Nuclear Information System (INIS)

    Lee, Chao-Kuei; Lin, Yuan-Yao; Lin, Sung-Hui; Lin, Gong-Ru; Pan, Ci-Ling

    2014-01-01

    Chirped pulse controlled carrier dynamics in low-temperature molecular-beam-epitaxy grown GaAs are investigated by degenerate pump-probe technique. Varying the chirped condition of excited pulse from negative to positive increases the carrier relaxation time so as to modify the dispersion and reshape current pulse in time domain. The spectral dependence of carrier dynamics is analytically derived and explained by Shockley-Read Hall model. This observation enables the new feasibility of controlling carrier dynamics in ultrafast optical devices via the chirped pulse excitations

  7. Nonlinear piezoelectricity in epitaxial ferroelectrics at high electric fields.

    Science.gov (United States)

    Grigoriev, Alexei; Sichel, Rebecca; Lee, Ho Nyung; Landahl, Eric C; Adams, Bernhard; Dufresne, Eric M; Evans, Paul G

    2008-01-18

    Nonlinear effects in the coupling of polarization with elastic strain have been predicted to occur in ferroelectric materials subjected to high electric fields. Such predictions are tested here for a PbZr0.2Ti0.8O3 ferroelectric thin film at electric fields in the range of several hundred MV/m and strains reaching up to 2.7%. The piezoelectric strain exceeds predictions based on constant piezoelectric coefficients at electric fields from approximately 200 to 400 MV/m, which is consistent with a nonlinear effect predicted to occur at corresponding piezoelectric distortions.

  8. Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommunication wavelengths on InP(111)A

    International Nuclear Information System (INIS)

    Ha, Neul; Kuroda, Takashi; Liu, Xiangming; Mano, Takaaki; Mitsuishi, Kazutaka; Noda, Takeshi; Sakuma, Yoshiki; Sakoda, Kazuaki; Castellano, Andrea; Sanguinetti, Stefano

    2014-01-01

    We demonstrate the formation of InAs quantum dots (QDs) on InAlAs/InP(111)A by means of droplet epitaxy. The C 3v symmetry of the (111)A substrate enabled us to realize highly symmetric QDs that are free from lateral elongations. The QDs exhibit a disk-like truncated shape with an atomically flat top surface. Photoluminescence signals show broad-band spectra at telecommunication wavelengths of 1.3 and 1.5 μm. Strong luminescence signals are retained up to room temperature. Thus, our QDs are potentially useful for realizing an entangled photon-pair source that is compatible with current telecommunication fiber networks

  9. High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy

    Directory of Open Access Journals (Sweden)

    Kazuo Uchida

    2012-12-01

    Full Text Available High-quality single crystalline twin phase NiO grown on sapphire substrates by metalorganic vapor phase epitaxy is reported. X-ray rocking curve analysis of NiO films grown at different temperatures indicates a minimum full width at half maximum of the cubic (111 diffraction peak of 0.107° for NiO film grown at as low as 550 °C. Detailed microstructural analysis by Φ scan X-ray diffraction and transmission electron microscopy reveal that the NiO film consists of large single crystalline domains with two different crystallographic orientations which are rotated relative to each other along the [111] axis by 60°. These single crystal domains are divided by the twin phase boundaries.

  10. High temperature storage loop :

    Energy Technology Data Exchange (ETDEWEB)

    Gill, David Dennis; Kolb, William J.

    2013-07-01

    A three year plan for thermal energy storage (TES) research was created at Sandia National Laboratories in the spring of 2012. This plan included a strategic goal of providing test capability for Sandia and for the nation in which to evaluate high temperature storage (>650ÀC) technology. The plan was to scope, design, and build a flow loop that would be compatible with a multitude of high temperature heat transfer/storage fluids. The High Temperature Storage Loop (HTSL) would be reconfigurable so that it was useful for not only storage testing, but also for high temperature receiver testing and high efficiency power cycle testing as well. In that way, HTSL was part of a much larger strategy for Sandia to provide a research and testing platform that would be integral for the evaluation of individual technologies funded under the SunShot program. DOEs SunShot program seeks to reduce the price of solar technologies to 6/kWhr to be cost competitive with carbon-based fuels. The HTSL project sought to provide evaluation capability for these SunShot supported technologies. This report includes the scoping, design, and budgetary costing aspects of this effort

  11. AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique

    Science.gov (United States)

    Deng, Qiufang; Guo, Lu; Liang, Song; Sun, Siwei; Xie, Xiao; Zhu, Hongliang; Wang, Wei

    2018-04-01

    AlGaInAs electroabsorption-modulated lasers (EMLs) fabricated by identical epitaxial layer technique are demonstrated. The EML device shows an infinite characteristic temperature when the temperature ranges from 20 oC to 30 oC. The integrated modulator has static extinction ratios of larger than 20 dB at a reverse bias voltage of - 2 V. The small signal modulation bandwidth of the modulator is larger than 11 GHz. At 10 Gb/s data modulation, the dynamic extinction ratio is about 9.5 dB in a back to back test configuration. Because only a simple fabrication procedure is needed, our EMLs are promising low cost light sources for optical fiber transmission applications.

  12. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-01-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  13. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke [Toyota Central R and D Labs., Inc., Nagakute, Aichi 480-1192 (Japan)

    2015-02-23

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs.

  14. High temperature niobium alloys

    International Nuclear Information System (INIS)

    Wojcik, C.C.

    1991-01-01

    Niobium alloys are currently being used in various high temperature applications such as rocket propulsion, turbine engines and lighting systems. This paper presents an overview of the various commercial niobium alloys, including basic manufacturing processes, properties and applications. Current activities for new applications include powder metallurgy, coating development and fabrication of advanced porous structures for lithium cooled heat pipes

  15. High Temperature Electrolysis

    DEFF Research Database (Denmark)

    Elder, Rachael; Cumming, Denis; Mogensen, Mogens Bjerg

    2015-01-01

    High temperature electrolysis of carbon dioxide, or co-electrolysis of carbon dioxide and steam, has a great potential for carbon dioxide utilisation. A solid oxide electrolysis cell (SOEC), operating between 500 and 900. °C, is used to reduce carbon dioxide to carbon monoxide. If steam is also i...

  16. High electron mobility through the edge states in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Bhasker, H. P.; Dhar, S.; Sain, A.; Kesaria, Manoj; Shivaprasad, S. M.

    2012-01-01

    Transport and optical properties of random networks of c-axis oriented wedge-shaped GaN nanowalls grown spontaneously on c-plane sapphire substrates through molecular beam epitaxy are investigated. Our study suggests a one dimensional confinement of carriers at the top edges of these connected nanowalls, which results in a blue shift of the band edge luminescence, a reduction of the exciton-phonon coupling, and an enhancement of the exciton binding energy. Not only that, the yellow luminescence in these samples is found to be completely suppressed even at room temperature. All these changes are highly desirable for the enhancement of the luminescence efficiency of the material. More interestingly, the electron mobility through the network is found to be significantly higher than that is typically observed for GaN epitaxial films. This dramatic improvement is attributed to the transport of electrons through the edge states formed at the top edges of the nanowalls.

  17. High temperature thermometric phosphors

    Science.gov (United States)

    Allison, Stephen W.; Cates, Michael R.; Boatner, Lynn A.; Gillies, George T.

    1999-03-23

    A high temperature phosphor consists essentially of a material having the general formula LuPO.sub.4 :Dy.sub.(x),Eu.sub.y) wherein: 0.1 wt %.ltoreq.x.ltoreq.20 wt % and 0.1 wt %.ltoreq.y.ltoreq.20 wt %. The high temperature phosphor is in contact with an article whose temperature is to be determined. The article having the phosphor in contact with it is placed in the environment for which the temperature of the article is to be determined. The phosphor is excited by a laser causing the phosphor to fluoresce. The emission from the phosphor is optically focused into a beam-splitting mirror which separates the emission into two separate emissions, the emission caused by the dysprosium dopant and the emission caused by the europium dopent. The separated emissions are optically filtered and the intensities of the emission are detected and measured. The ratio of the intensity of each emission is determined and the temperature of the article is calculated from the ratio of the intensities of the separate emissions.

  18. Obtaining of bilateral high voltage epitaxial p—i—n Si structures by LPE method

    Directory of Open Access Journals (Sweden)

    Vakiv N. M.

    2013-12-01

    Full Text Available Silicon p—i—n-structures are usually obtained using conventional diffusion method or liquid phase epitaxy (LPE. In both cases, the formation of p- and n-layers occurs in two stages. This technological approach is quite complex. Moreover, when forming bilateral high-voltage epitaxial layers, their parameters significantly deteriorate as a result of prolonged heat treatment of active high-resistivity layer. Besides, when using diffusion method, it is impossible to provide good reproducibility of the process. In this paper a technique of growing bilateral high-voltage silicon p—i—n-structures by LPE in a single process is proposed. The authors have obtained the optimum compounds of silicon-undersaturated molten solutions for highly doped (5•1018 cm–3 contact layers: 0.4—0.8 at. % aluminum in gallium melt for growing p-Si-layers and 0.03—0.15 at. % ytterbium in tin melt for n-Si-layers. Parameters of such structures provide for manufacturing of high-voltage diodes on their basis. Such diodes can be used in navigational equipment, communication systems for household and special purposes, on-board power supply systems, radar systems, medical equipment, etc.

  19. Temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy

    International Nuclear Information System (INIS)

    Kumagai, Yoshinao; Adachi, Hirokazu; Otake, Aya; Higashikawa, Yoshihiro; Togashi, Rie; Murakami, Hisashi; Koukitu, Akinori

    2010-01-01

    The temperature dependence of InN growth on (0001) sapphire substrates by atmospheric pressure hydride vapor phase epitaxy (HVPE) was investigated. N-polarity single-crystal InN layers were successfully grown at temperatures ranging from 400 to 500 C. The a and c lattice constants of InN layers grown at 450 C or below were slightly larger than those of InN layers grown above 450 C due to oxygen incorporation that also increased the carrier concentration. The optical absorption edge of the InN layer decreased from above 2.0 to 0.76 eV when the growth temperature was increased from 450 to 500 C. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

    Science.gov (United States)

    Chèze, C.; Feix, F.; Lähnemann, J.; Flissikowski, T.; Kryśko, M.; Wolny, P.; Turski, H.; Skierbiszewski, C.; Brandt, O.

    2018-01-01

    Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C . This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially uniform green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

  1. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu; Grimaud, Alexis; Crumlin, Ethan J.; Mezghani, Khaled; Habib, Mohamed A.; Feng, Zhenxing; Hong, Wesley T.; Biegalski, Michael D.; Christen, Hans M.; Shao-Horn, Yang

    2013-01-01

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  2. Strain Influence on the Oxygen Electrocatalysis of the (100)-Oriented Epitaxial La 2 NiO 4+δ Thin Films at Elevated Temperatures

    KAUST Repository

    Lee, Dongkyu

    2013-09-19

    Ruddlesden-Popper materials such as La2NiO4+δ (LNO) have high activities for surface oxygen exchange kinetics promising for solid oxide fuel cells and oxygen permeation membranes. Here we report the synthesis of the (100)tetragonal-oriented epitaxial LNO thin films prepared by pulsed laser deposition. The surface oxygen exchange kinetics determined from electrochemical impedance spectroscopy (EIS) were found to increase with decreasing film thickness from 390 to 14 nm. No significant change of the surface chemistry with different film thicknesses was observed using ex situ auger electron spectroscopy (AES). Increasing volumetric strains in the LNO films at elevated temperatures determined from in situ high-resolution X-ray diffraction (HRXRD) were correlated with increasing surface exchange kinetics and decreasing film thickness. Volumetric strains may alter the formation energy of interstitial oxygen and influence on the surface oxygen exchange kinetics of the LNO films. © 2013 American Chemical Society.

  3. H{sub 2}O{sub 2}-molecular beam epitaxy of high quality ZnO

    Energy Technology Data Exchange (ETDEWEB)

    El Shaer, A.; Bakin, A.; Che Mofor, A.; Kreye, M.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Blaesing, J.; Krost, A. [Otto-von-Guericke-University, Institute of Experimental Physics, Magdeburg (Germany); Stoimenos, J. [Aristotele University, Physics Department, Thessaloniki (Greece); Pecz, B. [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest (Hungary)

    2007-07-15

    We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H{sub 2}O{sub 2}-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26 nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphire with a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27 arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H{sub 2}O{sub 2}-MBE is a suitable technique to fabricate ZnO epilayers of very high quality. (orig.)

  4. High temperature materials characterization

    Science.gov (United States)

    Workman, Gary L.

    1990-01-01

    A lab facility for measuring elastic moduli up to 1700 C was constructed and delivered. It was shown that the ultrasonic method can be used to determine elastic constants of materials from room temperature to their melting points. The ease in coupling high frequency acoustic energy is still a difficult task. Even now, new coupling materials and higher power ultrasonic pulsers are being suggested. The surface was only scratched in terms of showing the full capabilities of either technique used, especially since there is such a large learning curve in developing proper methodologies to take measurements into the high temperature region. The laser acoustic system does not seem to have sufficient precision at this time to replace the normal buffer rod methodology.

  5. High temperature materials

    International Nuclear Information System (INIS)

    2003-01-01

    The aim of this workshop is to share the needs of high temperature and nuclear fuel materials for future nuclear systems, to take stock of the status of researches in this domain and to propose some cooperation works between the different research organisations. The future nuclear systems are the very high temperature (850 to 1200 deg. C) gas cooled reactors (GCR) and the molten salt reactors (MSR). These systems include not only the reactor but also the fabrication and reprocessing of the spent fuel. This document brings together the transparencies of 13 communications among the 25 given at the workshop: 1) characteristics and needs of future systems: specifications, materials and fuel needs for fast spectrum GCR and very high temperature GCR; 2) high temperature materials out of neutron flux: thermal barriers: materials, resistance, lifetimes; nickel-base metal alloys: status of knowledge, mechanical behaviour, possible applications; corrosion linked with the gas coolant: knowledge and problems to be solved; super-alloys for turbines: alloys for blades and discs; corrosion linked with MSR: knowledge and problems to be solved; 3) materials for reactor core structure: nuclear graphite and carbon; fuel assembly structure materials of the GCR with fast neutron spectrum: status of knowledge and ceramics and cermets needs; silicon carbide as fuel confinement material, study of irradiation induced defects; migration of fission products, I and Cs in SiC; 4) materials for hydrogen production: status of the knowledge and needs for the thermochemical cycle; 5) technologies: GCR components and the associated material needs: compact exchangers, pumps, turbines; MSR components: valves, exchangers, pumps. (J.S.)

  6. High temperature radioisotope capsule

    International Nuclear Information System (INIS)

    Bradshaw, G.B.

    1976-01-01

    A high temperature radioisotope capsule made up of three concentric cylinders, with the isotope fuel located within the innermost cylinder is described. The innermost cylinder has hemispherical ends and is constructed of a tantalum alloy. The intermediate cylinder is made of a molybdenum alloy and is capable of withstanding the pressure generated by the alpha particle decay of the fuel. The outer cylinder is made of a platinum alloy of high resistance to corrosion. A gas separates the innermost cylinder from the intermediate cylinder and the intermediate cylinder from the outer cylinder

  7. High-temperature uncertainty

    International Nuclear Information System (INIS)

    Timusk, T.

    2005-01-01

    Recent experiments reveal that the mechanism responsible for the superconducting properties of cuprate materials is even more mysterious than we thought. Two decades ago, Georg Bednorz and Alex Mueller of IBM's research laboratory in Zurich rocked the world of physics when they discovered a material that lost all resistance to electrical current at the record temperature of 36 K. Until then, superconductivity was thought to be a strictly low-temperature phenomenon that required costly refrigeration. Moreover, the IBM discovery - for which Bednorz and Mueller were awarded the 1987 Nobel Prize for Physics - was made in a ceramic copper-oxide material that nobody expected to be particularly special. Proposed applications for these 'cuprates' abounded. High-temperature superconductivity, particularly if it could be extended to room temperature, offered the promise of levitating trains, ultra-efficient power cables, and even supercomputers based on superconducting quantum interference devices. But these applications have been slow to materialize. Moreover, almost 20 years on, the physics behind this strange state of matter remains a mystery. (U.K.)

  8. High efficiency thin film solar cells grown by molecular beam epitaxy (HEFTY)

    Energy Technology Data Exchange (ETDEWEB)

    Mason, N.B.; Barnham, K.W.J.; Ballard, I.M.; Zhang, J. [Imperial College, London (United Kingdom)

    2006-05-04

    The project sought to show the UK as a world leader in the field of thin film crystalline solar cells. A premise was that the cell design be suitable for large-scale manufacturing and provide a basis for industrial exploitation. The study demonstrated (1) that silicon films grown at temperatures suitable for deposition on glass by Gas Phase Molecular Beam Epitaxy gives better PV cells than does Ultra Low Pressure Chemical Vapor Deposition; (2) a conversion energy of 15 per cent was achieved - the project target was 18 per cent and (3) one of the highest reported conversion efficiencies for a 15 micrometre silicon film was achieved. The study was carried out by BP Solar Limited under contract to the DTI.

  9. Strain in epitaxial high-index Bi{sub 2}Se{sub 3}(221) films grown by molecular-beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Li, Bin [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong); Chen, Weiguang [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Guo, Xin; Ho, Wingkin [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong); Dai, Xianqi [College of Physics and Electronic Engineering, Henan Normal University, Xinxiang, Henan 453007 (China); School of Physics and Electronic Engineering, Zhengzhou Normal University, Zhengzhou, Henan 450044 (China); Jia, Jinfeng [Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Collaborative Innovation Center of Advanced Microstructures, Department of Physics and Astronomy, Shanghai Jiaotong University, 800 Dongchuan Road, Shanghai 200240 (China); Xie, Maohai, E-mail: mhxie@hku.hk [Physics Department, The University of Hong Kong, Pokfulam Road (Hong Kong)

    2017-02-28

    Highlights: • High-index, off c-axis, Bi{sub 2}Se{sub 3} has been grown by molecular beam epitaxy on In{sub 2}Se{sub 3}. • A retarded strain relaxation process in such high-index Bi{sub 2}Se{sub 3} is observed, enabling experimentally probe strain effect on topological insulators. • It has been shown by calculation that the Dirac electrons participate in chemical bonding at the heterointerface. - Abstract: High-index Bi{sub 2}Se{sub 3}(221) film has been grown on In{sub 2}Se{sub 3}-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi{sub 2}Se{sub 3}(221) can be attributed to the layered structure of Bi{sub 2}Se{sub 3} crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi{sub 2}Se{sub 3} and In{sub 2}Se{sub 3} by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.

  10. Structural properties of relaxed thin film germanium layers grown by low temperature RF-PECVD epitaxy on Si and Ge (100) substrates

    Energy Technology Data Exchange (ETDEWEB)

    Cariou, R., E-mail: romain.cariou@polytechnique.edu [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); III-V lab a joint laboratory between Alcatel-Lucent Bell Labs France, Thales Research and Technology and CEA-LETI, route de Nozay, 91460, Marcoussis, France. (France); Ruggeri, R. [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); CNR-IMM, strada VIII n°5, zona industriale, 95121, Catania (Italy); Tan, X.; Nassar, J.; Roca i Cabarrocas, P. [LPICM-CNRS, Ecole Polytechnique, 91128, Palaiseau (France); Mannino, Giovanni [CNR-IMM, strada VIII n°5, zona industriale, 95121, Catania (Italy)

    2014-07-15

    We report on unusual low temperature (175 °C) heteroepitaxial growth of germanium thin films using a standard radio-frequency plasma process. Spectroscopic ellipsometry and transmission electron microscopy (TEM) reveal a perfect crystalline quality of epitaxial germanium layers on (100) c-Ge wafers. In addition direct germanium crystal growth is achieved on (100) c-Si, despite 4.2% lattice mismatch. Defects rising from Ge/Si interface are mostly located within the first tens of nanometers, and threading dislocation density (TDD) values as low as 10{sup 6} cm{sup −2} are obtained. Misfit stress is released fast: residual strain of −0.4% is calculated from Moiré pattern analysis. Moreover we demonstrate a striking feature of low temperature plasma epitaxy, namely the fact that crystalline quality improves with thickness without epitaxy breakdown, as shown by TEM and depth profiling of surface TDD.

  11. Effects of substrate temperature and Cu underlayer thickness on the formation of SmCo5(0001) epitaxial thin films

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Nukaga, Yuri; Futamoto, Masaaki; Kirino, Fumiyoshi

    2010-01-01

    SmCo 5 (0001) epitaxial thin films were prepared on Cu(111) underlayers heteroepitaxially grown on Al 2 O 3 (0001) single-crystal substrates by molecular beam epitaxy. The effects of substrate temperature and Cu underlayer thickness on the crystallographic properties of SmCo 5 (0001) epitaxial films were investigated. The Cu atoms of underlayer diffuse into the SmCo 5 film and substitute the Co sites in SmCo 5 structure forming an alloy compound of Sm(Co,Cu) 5 . The ordered phase formation is enhanced with increasing the substrate temperature and with increasing the Cu underlayer thickness. The Cu atom diffusion into the SmCo 5 film is assisting the formation of Sm(Co,Cu) 5 ordered phase.

  12. N-polar GaN epitaxy and high electron mobility transistors

    International Nuclear Information System (INIS)

    Wong, Man Hoi; Keller, Stacia; Dasgupta, Nidhi Sansaptak; Denninghoff, Daniel J; Kolluri, Seshadri; Brown, David F; Lu, Jing; Fichtenbaum, Nicholas A; Ahmadi, Elaheh; DenBaars, Steven P; Speck, James S; Mishra, Umesh K; Singisetti, Uttam; Chini, Alessandro; Rajan, Siddharth

    2013-01-01

    This paper reviews the progress of N-polar (0001-bar) GaN high frequency electronics that aims at addressing the device scaling challenges faced by GaN high electron mobility transistors (HEMTs) for radio-frequency and mixed-signal applications. Device quality (Al, In, Ga)N materials for N-polar heterostructures are developed using molecular beam epitaxy and metalorganic chemical vapor deposition. The principles of polarization engineering for designing N-polar HEMT structures will be outlined. The performance, scaling behavior and challenges of microwave power devices as well as highly-scaled depletion- and enhancement-mode devices employing advanced technologies including self-aligned processes, n+ (In,Ga)N ohmic contact regrowth and high aspect ratio T-gates will be discussed. Recent research results on integrating N-polar GaN with Si for prospective novel applications will also be summarized. (invited review)

  13. High Temperature Piezoelectric Drill

    Science.gov (United States)

    Bao, Xiaoqi; Bar-Cohen, Yoseph; Sherrit, Stewart; Badescu, Mircea; Shrout, Tom

    2012-01-01

    Venus is one of the planets in the solar systems that are considered for potential future exploration missions. It has extreme environment where the average temperature is 460 deg C and its ambient pressure is about 90 atm. Since the existing actuation technology cannot maintain functionality under the harsh conditions of Venus, it is a challenge to perform sampling and other tasks that require the use of moving parts. Specifically, the currently available electromagnetic actuators are limited in their ability to produce sufficiently high stroke, torque, or force. In contrast, advances in developing electro-mechanical materials (such as piezoelectric and electrostrictive) have enabled potential actuation capabilities that can be used to support such missions. Taking advantage of these materials, we developed a piezoelectric actuated drill that operates at the temperature range up to 500 deg C and the mechanism is based on the Ultrasonic/Sonic Drill/Corer (USDC) configuration. The detailed results of our study are presented in this paper

  14. Big-data reflection high energy electron diffraction analysis for understanding epitaxial film growth processes.

    Science.gov (United States)

    Vasudevan, Rama K; Tselev, Alexander; Baddorf, Arthur P; Kalinin, Sergei V

    2014-10-28

    Reflection high energy electron diffraction (RHEED) has by now become a standard tool for in situ monitoring of film growth by pulsed laser deposition and molecular beam epitaxy. Yet despite the widespread adoption and wealth of information in RHEED images, most applications are limited to observing intensity oscillations of the specular spot, and much additional information on growth is discarded. With ease of data acquisition and increased computation speeds, statistical methods to rapidly mine the data set are now feasible. Here, we develop such an approach to the analysis of the fundamental growth processes through multivariate statistical analysis of a RHEED image sequence. This approach is illustrated for growth of La(x)Ca(1-x)MnO(3) films grown on etched (001) SrTiO(3) substrates, but is universal. The multivariate methods including principal component analysis and k-means clustering provide insight into the relevant behaviors, the timing and nature of a disordered to ordered growth change, and highlight statistically significant patterns. Fourier analysis yields the harmonic components of the signal and allows separation of the relevant components and baselines, isolating the asymmetric nature of the step density function and the transmission spots from the imperfect layer-by-layer (LBL) growth. These studies show the promise of big data approaches to obtaining more insight into film properties during and after epitaxial film growth. Furthermore, these studies open the pathway to use forward prediction methods to potentially allow significantly more control over growth process and hence final film quality.

  15. High temperature materials and mechanisms

    CERN Document Server

    2014-01-01

    The use of high-temperature materials in current and future applications, including silicone materials for handling hot foods and metal alloys for developing high-speed aircraft and spacecraft systems, has generated a growing interest in high-temperature technologies. High Temperature Materials and Mechanisms explores a broad range of issues related to high-temperature materials and mechanisms that operate in harsh conditions. While some applications involve the use of materials at high temperatures, others require materials processed at high temperatures for use at room temperature. High-temperature materials must also be resistant to related causes of damage, such as oxidation and corrosion, which are accelerated with increased temperatures. This book examines high-temperature materials and mechanisms from many angles. It covers the topics of processes, materials characterization methods, and the nondestructive evaluation and health monitoring of high-temperature materials and structures. It describes the ...

  16. Some properties of Ga-As-Alsub(x)Gasub(1-x)As heterojunction grown by low temperature liquid phase epitaxy

    International Nuclear Information System (INIS)

    Yu Lisheng; Liu Hongxun; Zhang Bei; Wang Shumin

    1986-03-01

    GaAs-Alsub(x)Gasub(1-x)As heterojunction was grown by liquid phase epitaxy at low growth temperature 650-700 deg. C. The series resistance of heterojunction with DH laser structure was measured. Doping properties of Mg in GaAs and Alsub(x)Gasub(1-x)As were investigated. It is found that impurity concentration of Mg as high as 10 18 cm -3 can be doped easily. The Shubnikov-de-Haas oscillation was observed in GaAs-N Alsub(0.35)Gasub(0.65)As heterointerface. It is demonstrated that in these heterointerfaces there exists 2DEG with some contribution from 3D electron of N-AlGaAs layer. (author)

  17. Low-temperature, ultrahigh-vacuum tip-enhanced Raman spectroscopy combined with molecular beam epitaxy for in situ two-dimensional materials' studies

    Science.gov (United States)

    Sheng, Shaoxiang; Li, Wenbin; Gou, Jian; Cheng, Peng; Chen, Lan; Wu, Kehui

    2018-05-01

    Tip-enhanced Raman spectroscopy (TERS), which combines scanning probe microscopy with the Raman spectroscopy, is capable to access the local structure and chemical information simultaneously. However, the application of ambient TERS is limited by the unstable and poorly controllable experimental conditions. Here, we designed a high performance TERS system based on a low-temperature ultrahigh-vacuum scanning tunneling microscope (LT-UHV-STM) and combined with a molecular beam epitaxy (MBE) system. It can be used for growing two-dimensional (2D) materials and for in situ STM and TERS characterization. Using a 2D silicene sheet on the Ag(111) surface as a model system, we achieved an unprecedented 109 Raman single enhancement factor in combination with a TERS spatial resolution down to 0.5 nm. The results show that TERS combined with a MBE system can be a powerful tool to study low dimensional materials and surface science.

  18. Development of High Quality 4H-SiC Thick Epitaxy for Reliable High Power Electronics Using Halogenated Precursors

    Science.gov (United States)

    2016-08-02

    defects :=()llowed by a second buffer epilayer gro\\\\ th with ~: urn thickness with high n-type dopi:1g (- 5£17 cm-3) for the same C/Si ratio of ~1.4 at...gradient, pressure , etc.) can further reduce the parasitic deposition, especially in TFS-growth. • Thick epitaxy on-axis 4H-SiC Growth at High Growth...From - To) 08/02/2016 Final Technical Report 01-Apr-10 Through 31-Mar-14 4. TITLE AND SUBTITLE 5a. CONTRACT NUMBER Development of High Quality 4H

  19. Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

    Science.gov (United States)

    Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

    2017-02-01

    In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

  20. Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

    Science.gov (United States)

    Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

    2017-02-01

    In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

  1. High temperature superconductors

    CERN Document Server

    Paranthaman, Parans

    2010-01-01

    This essential reference provides the most comprehensive presentation of the state of the art in the field of high temperature superconductors. This growing field of research and applications is currently being supported by numerous governmental and industrial initiatives in the United States, Asia and Europe to overcome grid energy distribution issues. The technology is particularly intended for densely populated areas. It is now being commercialized for power-delivery devices, such as power transmission lines and cables, motors and generators. Applications in electric utilities include current limiters, long transmission lines and energy-storage devices that will help industries avoid dips in electric power.

  2. Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

    Science.gov (United States)

    Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

    2018-02-01

    The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

  3. Effect of the growth temperature and the AlN mole fraction on In incorporation and properties of quaternary III-nitride layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Fernandez-Garrido, S.; Pereiro, J.; Munoz, E.; Calleja, E.; Redondo-Cubero, A.; Gago, R.; Bertram, F.; Christen, J.; Luna, E.; Trampert, A.

    2008-01-01

    Indium incorporation into wurtzite (0001)-oriented In x Al y Ga 1-x-y N layers grown by plasma-assisted molecular beam epitaxy was studied as a function of the growth temperature (565-635 deg. C) and the AlN mole fraction (0.01< y<0.27). The layer stoichiometry was determined by Rutherford backscattering spectrometry (RBS). RBS shows that indium incorporation decreased continuously with increasing growth temperature due to thermally enhanced dissociation of In-N bonds and for increasing AlN mole fractions. High resolution x-ray diffraction and transmission electron microscopy (TEM) measurements did not show evidence of phase separation. The mosaicity of the quaternary layers was found to be mainly determined by the growth temperature and independent on alloy composition within the range studied. However, depending on the AlN mole fraction, nanometer-sized composition fluctuations were detected by TEM. Photoluminescence spectra showed a single broad emission at room temperature, with energy and bandwidth S- and W-shaped temperature dependences typical of exciton localization by alloy inhomogeneities. Cathodoluminescence measurements demonstrated that the alloy inhomogeneities, responsible of exciton localization, occur on a lateral length scale below 150 nm, which is corroborated by TEM

  4. Hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Tuocheng; Jia, Zhenzhao; Yan, Baoming; Yu, Dapeng; Wu, Xiaosong, E-mail: xswu@pku.edu.cn [State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, Peking University, Beijing 100871 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100871 (China)

    2015-01-05

    We demonstrate hydrogen assisted growth of high quality epitaxial graphene on the C-face of 4H-SiC. Compared with the conventional thermal decomposition technique, the size of the growth domain by this method is substantially increased and the thickness variation is reduced. Based on the morphology of epitaxial graphene, the role of hydrogen is revealed. It is found that hydrogen acts as a carbon etchant. It suppresses the defect formation and nucleation of graphene. It also improves the kinetics of carbon atoms via hydrocarbon species. These effects lead to increase of the domain size and the structure quality. The consequent capping effect results in smooth surface morphology and suppression of multilayer growth. Our method provides a viable route to fine tune the growth kinetics of epitaxial graphene on SiC.

  5. Magnetic surface domain imaging of uncapped epitaxial FeRh(001) thin films across the temperature-induced metamagnetic transition

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Xianzhong; Matthes, Frank; Bürgler, Daniel E., E-mail: d.buergler@fz-juelich.de; Schneider, Claus M. [Peter Grünberg Institut, Electronic Properties (PGI-6) and Jülich-Aachen Research Alliance, Fundamentals of Future Information Technology (JARA-FIT), Forschungszentrum Jülich, D-52425 Jülich (Germany)

    2016-01-15

    The surface magnetic domain structure of uncapped epitaxial FeRh/MgO(001) thin films was imaged by in-situ scanning electron microscopy with polarization analysis (SEMPA) at various temperatures between 122 and 450 K. This temperature range covers the temperature-driven antiferromagnetic-to-ferromagnetic phase transition in the body of the films that was observed in-situ by means of the more depth-sensitive magneto-optical Kerr effect. The SEMPA images confirm that the interfacial ferromagnetism coexisting with the antiferromagnetic phase inside the film is an intrinsic property of the FeRh(001) surface. Furthermore, the SEMPA data display a reduction of the in-plane magnetization occuring well above the phase transition temperature which, thus, is not related to the volume expansion at the phase transition. This observation is interpreted as a spin reorientation of the surface magnetization for which we propose a possible mechanism based on temperature-dependent tetragonal distortion due to different thermal expansion coefficients of MgO and FeRh.

  6. Non-adiabatic ab initio molecular dynamics of supersonic beam epitaxy of silicon carbide at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Taioli, Simone [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Physics, University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Perugia (Italy); Department of Chemistry, University of Bologna, Bologna (Italy); Garberoglio, Giovanni [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Simonucci, Stefano [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Perugia (Italy); Department of Physics, University of Camerino, Camerino (Italy); Beccara, Silvio a [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Physics, University of Trento, Trento (Italy); Aversa, Lucrezia [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento (Italy); Nardi, Marco [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Trento (Italy); Institut fuer Physik, Humboldt-Universitaet zu Berlin, Berlin (Germany); Verucchi, Roberto [Institute of Materials for Electronics and Magnetism, FBK-CNR, Trento (Italy); Iannotta, Salvatore [Institute of Materials for Electronics and Magnetism, IMEM-CNR, Parma (Italy); Dapor, Maurizio [Interdisciplinary Laboratory for Computational Science, FBK-Center for Materials and Microsystems and University of Trento, Trento (Italy); Department of Materials Engineering and Industrial Technologies, University of Trento, Trento (Italy); Istituto Nazionale di Fisica Nucleare, Sezione di Padova (Italy); and others

    2013-01-28

    In this work, we investigate the processes leading to the room-temperature growth of silicon carbide thin films by supersonic molecular beam epitaxy technique. We present experimental data showing that the collision of fullerene on a silicon surface induces strong chemical-physical perturbations and, for sufficient velocity, disruption of molecular bonds, and cage breaking with formation of nanostructures with different stoichiometric character. We show that in these out-of-equilibrium conditions, it is necessary to go beyond the standard implementations of density functional theory, as ab initio methods based on the Born-Oppenheimer approximation fail to capture the excited-state dynamics. In particular, we analyse the Si-C{sub 60} collision within the non-adiabatic nuclear dynamics framework, where stochastic hops occur between adiabatic surfaces calculated with time-dependent density functional theory. This theoretical description of the C{sub 60} impact on the Si surface is in good agreement with our experimental findings.

  7. Strain and crystalline defects in epitaxial GaN layers studied by high-resolution X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Chierchia, Rosa

    2007-07-01

    This thesis treats strain and dislocations in MOVPE GaN layers. The mosaic structure of metalorganic vapour phase epitaxy (MOVPE)-grown GaN layers was studied in dependence on the grain diameter utilizing high-resolution XRD. Different models for the defect structure were analyzed, the edge type TD densities were calculated under the assumption that the dislocations are not randomly distributed but localized at the grain boundaries. Moreover, in situ measurements have shown that the layers are under tension in the c-plane when a nucleation layer is used. The second part of this thesis treats a particular approach to reduce dislocations in MOVPE GaN layers, i.e. maskless pendeo epitaxial growth of MOVPE GAN layers. FE simulations assuming the strain to be completely induced during cooling of the structures after growth agree only partly with experimental data. The strain state of single layers and stripes of GaN grown on SiC was studied to exploit the evolution of the strain in the different phases of the PE growth. The biaxial compressive stress, due to the lattice mismatch between the GaN layer and the AlN nucleation layer is plastically relieved before overgrowth. Temperature dependent measurements show a linear reduction of the wing tilt with increasing temperature varying from sample to sample. Bent TDs have been observed in TEM images of maskless PE samples. Stress induced from the mismatch between the AlN buffer layer and the GaN also contributes to the remaining part of the wing tilt not relieved thermally. It has to be noted that the rest tilt value varies from sample to sample at the growth temperature. In fact some of the data indicate that the wing tilt decreases with increasing V/III ratio. In the last Chapter the application of X-ray techniques for the analysis of strain and composition in layers of inhomogeneous composition is explored. In the first part of the Chapter the strain state and the Al content of AlGaN buffer layers grown directly on (0001

  8. High temperature metallic recuperator

    Science.gov (United States)

    Ward, M. E.; Solmon, N. G.; Smeltzer, C. E.

    1981-06-01

    An industrial 4.5 MM Btu/hr axial counterflow recuperator, fabricated to deliver 1600 F combustion air, was designed to handle rapid cyclic loading, a long life, acceptable costs, and a low maintenance requirement. A cost benefit anlysis of a high temperature waste heat recovery system utilizing the recurperator and components capable of 1600 F combustion air preheat shows that this system would have a payback period of less than two years. Fifteen companies and industrial associations were interviewed and expressed great interest in recuperation in large energy consuming industries. Determination of long term environmental effects on candidate recuperator tubing alloys was completed. Alloys found to be acceptable in the 2200 F flue gas environment of a steel billet reheat furnace, were identified.

  9. Electrical properties of single crystal Yttrium Iron Garnet ultra-thin films at high temperatures

    OpenAIRE

    Thiery, Nicolas; Naletov, Vladimir V.; Vila, Laurent; Marty, Alain; Brenac, Ariel; Jacquot, Jean-François; de Loubens, Grégoire; Viret, Michel; Anane, Abdelmadjid; Cros, Vincent; Youssef, Jamal Ben; Demidov, Vladislav E.; Demokritov, Sergej O.; Klein, Olivier

    2017-01-01

    We report a study on the electrical properties of 19 nm thick Yttrium Iron Garnet (YIG) films grown by liquid phase epitaxy. The electrical conductivity and Hall coefficient are measured in the high temperature range [300,400]~K using a Van der Pauw four-point probe technique. We find that the electrical resistivity decreases exponentially with increasing temperature following an activated behavior corresponding to a band-gap of $E_g\\approx 2$ eV, indicating that epitaxial YIG ultra-thin film...

  10. Carbon dioxide and water adsorption on highly epitaxial Delafossite CuFeO2 thin film

    Science.gov (United States)

    Rojas, S.; Joshi, T.; Borisov, P.; Sarabia, M.; Lederman, D.; Cabrera, A. L.

    2015-03-01

    Thermal programmed desorption (TPD) of CO2 and H2O from a 200 nm thick CuFeO2 Delafossite surface was performed in a standard UHV chamber, The CuFeO2 thin film grown using Pulsed Laser Deposition (PLD) over an Al2O3 (0001) substrate with controlled O2 atmosphere resulted with highly epitaxial crystal structure. The adsorption/desorption of CO2 and H2O process was also monitored with X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES). Our results revealed that carbon dioxide interacts with CuFeO2 forming Fe carbonates compounds on its surface. Hydroxides were also formed on the surface due to water presence. Using TPD data, Arrhenius plots for CO2 and water desorption were done and activation energy for desorption was obtained. Funds FONDECyT 1130372; Thanks to P. Ferrari.

  11. Growth of epitaxial thin films by pulsed laser ablation

    International Nuclear Information System (INIS)

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs

  12. Impact of substrate temperature on the incorporation of carbon-related defects and mechanism for semi-insulating behavior in GaN grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Armstrong, A.; Poblenz, C.; Green, D.S.; Mishra, U.K.; Speck, J.S.; Ringel, S.A.

    2006-01-01

    The electrical conductivity and deep level spectrum of GaN grown by molecular beam epitaxy and codoped with carbon and silicon were investigated for substrate temperatures T s of 650 and 720 deg. C as a function relative carbon and silicon doping levels. With sufficiently high carbon doping, semi-insulating behavior was observed for films grown at both temperatures, and growth at T s =720 deg. C enhanced the carbon compensation ratio. Similar carbon-related band gap states were observed via deep level optical spectroscopy for films grown at both substrate temperatures. Due to the semi-insulating nature of the films, a lighted capacitance-voltage technique was required to determine individual deep level concentrations. Carbon-related band gap states underwent substantial redistribution between deep level and shallow acceptor configurations with change in T s . In light of a T s dependence for the preferential site of carbon incorporation, a model of semi-insulating behavior in terms of carbon impurity state incorporation mediated by substrate temperature is proposed

  13. A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

    Science.gov (United States)

    Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

    2016-04-22

    High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

  14. Solid phase epitaxial growth of high mobility La:BaSnO_3 thin films co-doped with interstitial hydrogen

    International Nuclear Information System (INIS)

    Niedermeier, Christian A.; Rhode, Sneha; Fearn, Sarah; Moram, Michelle A.; Ide, Keisuke; Hiramatsu, Hidenori; Hosono, Hideo; Kamiya, Toshio

    2016-01-01

    This work presents the solid phase epitaxial growth of high mobility La:BaSnO_3 thin films on SrTiO_3 single crystal substrates by crystallization through thermal annealing of nanocrystalline thin films prepared by pulsed laser deposition at room temperature. The La:BaSnO_3 thin films show high epitaxial quality and Hall mobilities up to 26 ± 1 cm"2/Vs. Secondary ion mass spectroscopy is used to determine the La concentration profile in the La:BaSnO_3 thin films, and a 9%–16% La doping activation efficiency is obtained. An investigation of H doping to BaSnO_3 thin films is presented employing H plasma treatment at room temperature. Carrier concentrations in previously insulating BaSnO_3 thin films were increased to 3 × 10"1"9" cm"−"3 and in La:BaSnO_3 thin films from 6 × 10"1"9" cm"−"3 to 1.5 × 10"2"0" cm"−"3, supporting a theoretical prediction that interstitial H serves as an excellent n-type dopant. An analysis of the free electron absorption by infrared spectroscopy yields a small (H,La):BaSnO_3 electron effective mass of 0.27 ± 0.05 m_0 and an optical mobility of 26 ± 7 cm"2/Vs. As compared to La:BaSnO_3 single crystals, the smaller electron mobility in epitaxial thin films grown on SrTiO_3 substrates is ascribed to threading dislocations as observed in high resolution transmission electron micrographs.

  15. Continuous room-temperature operation of GaAs-Al/sub x/Ga1/sub -//sub x/As double-heterostructure lasers prepared by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Cho, A.Y.; Dixon, R.W.; Casey, H.C. Jr.; Hartman, R.L.

    1976-01-01

    The continuous (cw) operation at temperatures as high as 100 0 C of stripe-geometry GaAs-Al/sub x/Ga/sub 1-x/As double-heterostructure lasers fabricated by molecular-beam epitaxial (MBE) techniques has been achieved. Improved MBE laser performance was the result of the extensive efforts to eliminate hydrocarbon and water vapor from the growth apparatus. For 12-μm-wide stripe-geometry lasers with 380-μm-long cavities, the cw threshold currents varied between 163 and 297 mA at room temperature

  16. Growth of AlN/Pt heterostructures on amorphous substrates at low temperatures via atomic layer epitaxy

    International Nuclear Information System (INIS)

    Nepal, N.; Goswami, R.; Qadri, S.B.; Mahadik, N.A.; Kub, F.J.; Eddy, C.R.

    2014-01-01

    Recent results on atomic layer epitaxy (ALE) growth and characterization of (0 0 0 1)AlN on highly oriented (1 1 1)Pt layers on amorphous HfO 2 /Si(1 0 0) are reported. HfO 2 was deposited by atomic layer deposition on Si(1 0 0) followed by ALE growth of Pt(15 nm) and, subsequently, AlN(60 nm) at 500 °C. Based on the X-ray diffraction and transmission electron microscopy measurements, the Pt and AlN layers are highly oriented along the (1 1 1) and (0 0 0 2) directions, respectively. Demonstrations of AlN/Pt heterostructures open up the possibility of new state-of-the-art microelectromechanical systems devices

  17. One-step Ge/Si epitaxial growth.

    Science.gov (United States)

    Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

    2011-07-01

    Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

  18. Low-temperature technique of thin silicon ion implanted epitaxial detectors

    Energy Technology Data Exchange (ETDEWEB)

    Kordyasz, A.J.; Bednarek, A. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); Le Neindre, N.; Bougault, R.; Lopez, O.; Merrer, Y.; Vient, E. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); Parlog, M. [Universite de Caen, LPC, IN2P3-CNRS, ENSICAEN, Caen-Cedex (France); ' ' Horia Hulubei' ' National Institute of Physics and Nuclear Engineering (IFIN-HH), Bucharest Magurele (Romania); Casini, G.; Poggi, G.; Bini, M.; Valdre, S.; Scarlini, E.; Pasquali, G.; Pastore, G.; Piantelli, S.; Stefanini, A.; Olmi, A.; Barlini, S. [INFN Firenze, Sesto Fiorentino (Italy); Universita di Firenze, Sesto Fiorentino (Firenze) (Italy); Kowalczyk, M. [Warsaw University, Heavy Ion Laboratory, Warsaw (Poland); University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Frankland, J.D.; Bonnet, E.; Chbihi, A.; Gruyer, D. [CEA et IN2P3-CNRS, GANIL, Caen-Cedex 05 (France); Borderie, B.; Ademard, G.; Edelbruck, P.; Rivet, M.F.; Salomon, F. [IN2P3-CNRS, Institut de Physique Nucleaire, Orsay-Cedex (France); Boiano, A.; Rosato, E.; Meoli, A.; Ordine, A.; Spadaccini, G.; Tortone, G.; Vigilante, M.; Vanzanella, E. [Universita di Napoli ' ' Federico II' ' , Dipartimento di Scienze Fisiche, Napoli (Italy); INFN, Napoli (Italy); Bruno, M.; Serra, S.; Morelli, L.; Guerzoni, M. [INFN, Bologna (Italy); Universita di Bologna, Bologna (Italy); Alba, R.; Santonocito, D.; Maiolino, C. [INFN, Catania (Italy); Universita di Catania, LNS, Catania (Italy); Cinausero, M.; Gramegna, F.; Marchi, T. [INFN LNL Legnaro, Legnaro (Padova) (Italy); Kozik, T.; Kulig, P.; Twarog, T.; Sosin, Z. [Jagiellonian University, Cracow (Poland); Gasior, K.; Grzeszczuk, A.; Zipper, W. [University of Silesia, Silesian University, Katowice (Poland); Sarnecki, J.; Lipinski, D.; Wodzinska, H.; Brzozowski, A.; Teodorczyk, M.; Gajewski, M.; Zagojski, A.; Krzyzak, K. [Institute of Electronic Materials Technology, Warsaw (Poland); Tarasiuk, K.J. [University of Warsaw, Institute of Experimental Physics, Warsaw (Poland); Khabanowa, Z. [Faculty of Physics, Warsaw University of Technology, Warsaw (Poland); Kordyasz, L. [Warsaw University of Technology, Faculty of Mechatronics, Institute of Mikromechanics and Photonics, Department of Design of Precision Devices, Warsaw (Poland)

    2015-02-01

    A new technique of large-area thin ion implanted silicon detectors has been developed within the R and D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B{sup +} ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from {sup 241}Am (left angle E{sub α} right angle = 5.5 MeV). Preliminary tests on the first thin detector (area ∼ 20 x 20 mm{sup 2}) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction {sup 84}Kr (E = 35 A MeV) + {sup 112}Sn. The ΔE - E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge. (orig.)

  19. Microwave dynamics of YBCO bi-epitaxial Josephson structures

    DEFF Research Database (Denmark)

    Constantinian, K. Y.; Ovsyannikov, G. A.; Mashtakov, A. D.

    1996-01-01

    The processes of interaction of microwaves (frequency View the MathML source) with a single high-Tc superconducting YBa2Cu3Ox (YBCO) bi-epitaxial grain-boundary junction and with an array of two junctions connected in series, have been investigated experimentally at temperatures T = 4.2− 77 K......, as well as the subharmonic detector response at weak magnetic fields φ microwave field induced frequency synchronization of two series connected bi-epitaxial YBCO junctions....

  20. Anisotropic ferromagnetic behaviors in highly orientated epitaxial NiO-based thin films

    Directory of Open Access Journals (Sweden)

    Yu-Jun Zhang

    2015-07-01

    Full Text Available Antiferromagnetic materials attract a great amount of attention recently for promising antiferromagnet-based spintronics applications. NiO is a conventional antiferromagnetic semiconductor material and can show ferromagnetism by doping other magnetic elements. In this work, we synthesized epitaxial Fe-doped NiO thin films on SrTiO3 substrates with various crystal orientations by pulsed laser deposition. The room-temperature ferromagnetism of these films is anisotropic, including the saturated magnetization and the coercive field. The anisotropic magnetic behaviors of Fe-doped NiO diluted magnetic oxide system should be closely correlated to the magnetic structure of antiferromagnetic NiO base. Within the easy plane of NiO, the coercive field of the films becomes smaller, and larger coercive field while tested out of the easy plane of NiO. The saturated magnetization anisotropy is due to different strain applied by different substrates. These results lead us to more abundant knowledge of the exchange interactions in this conventional antiferromagnetic system.

  1. Advances in high temperature chemistry

    CERN Document Server

    Eyring, Leroy

    1969-01-01

    Advances in High Temperature Chemistry, Volume 2 covers the advances in the knowledge of the high temperature behavior of materials and the complex and unfamiliar characteristics of matter at high temperature. The book discusses the dissociation energies and free energy functions of gaseous monoxides; the matrix-isolation technique applied to high temperature molecules; and the main features, the techniques for the production, detection, and diagnosis, and the applications of molecular beams in high temperatures. The text also describes the chemical research in streaming thermal plasmas, as w

  2. Vapor-solid-solid growth mechanism driven by an epitaxial match between solid Au Zn alloy catalyst particle and Zn O nano wire at low temperature

    International Nuclear Information System (INIS)

    Campos, Leonardo C.; Tonezzer, Matteo; Ferlauto, Andre S.; Magalhaes-Paniago, Rogerio; Oliveira, Sergio; Ladeira, Luiz O.; Lacerda, Rodrigo G.

    2008-01-01

    Nowadays, the growth of nano materials, like nano wires and nano tubes, is one of the key research areas of nano technology. However, a full picture of the growth mechanism of these quasi-one dimensional systems still needs to be achieved if these materials are to be applied electronics, biology and medicinal fields. Nevertheless, in spite of considerable advances on the growth of numerous nano wires, a clear understanding of the growth mechanism is still controversial and highly discussed. The present work provides a comprehensive picture of the precise mechanism of Zn O vapor-solid-solid (VSS) nano wire growth at low temperatures and gives the fundamental reasons responsible. We demonstrate by using a combination of synchrotron XRD and high resolution TEM that the growth dynamics at low temperatures is not governed by the well-known vapor-liquid solid (VLS) mechanisms. A critical new insight on the driving factor of VSS growth is proposed in which the VSS process occurs by a solid diffusion mechanism that is driven by a preferential oxidation process of the Zn inside the alloy catalyst induced by an epitaxial match between the Zn O(10-10) plane and the γ-Au Zn(222) plane. We believe that these results are not only important for the understanding of Zn O nano wire growth but could also have significant impact on the understanding of growth mechanisms of other nano wire systems. (author)

  3. Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

    Science.gov (United States)

    Chen, Lin; Yang, Guan-jun

    2018-02-01

    In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

  4. High quality long-wavelength lasers grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine

    International Nuclear Information System (INIS)

    Miller, B.I.; Young, M.G.; Oron, M.; Koren, U.; Kisker, D.

    1990-01-01

    High quality long-wavelength InGaAsP/InP lasers were grown by atmospheric organometallic vapor phase epitaxy using tertiarybutylarsine (TBA) as a substitute for AsH 3 . Electrical and photoluminescence measurements on InGaAs and InGaAsP showed that TBA-grown material was at least as good as AsH 3 material in terms of suitability for lasers. From two wafers grown by TBA, current thresholds I th as low as 11 mA were obtained for a 2-μm-wide semi-insulating blocking planar buried heterostructure laser lasing near 1.3 μm wavelength. The differential quantum efficiencies η D were as high as 21%/facet with a low internal loss α=21 cm -1 . In addition I th as low as 18 mA and η D as high as 18% have been obtained for multiplequantum well lasers at 1.54 μm wavelength. These results show that TBA might be used to replace AsH 3 without compromising on laser performance

  5. High-Temperature Piezoelectric Sensing

    Directory of Open Access Journals (Sweden)

    Xiaoning Jiang

    2013-12-01

    Full Text Available Piezoelectric sensing is of increasing interest for high-temperature applications in aerospace, automotive, power plants and material processing due to its low cost, compact sensor size and simple signal conditioning, in comparison with other high-temperature sensing techniques. This paper presented an overview of high-temperature piezoelectric sensing techniques. Firstly, different types of high-temperature piezoelectric single crystals, electrode materials, and their pros and cons are discussed. Secondly, recent work on high-temperature piezoelectric sensors including accelerometer, surface acoustic wave sensor, ultrasound transducer, acoustic emission sensor, gas sensor, and pressure sensor for temperatures up to 1,250 °C were reviewed. Finally, discussions of existing challenges and future work for high-temperature piezoelectric sensing are presented.

  6. High temperature superconductor accelerator magnets

    NARCIS (Netherlands)

    van Nugteren, J.

    2016-01-01

    For future particle accelerators bending dipoles are considered with magnetic fields exceeding 20T. This can only be achieved using high temperature superconductors (HTS). These exhibit different properties from classical low temperature superconductors and still require significant research and

  7. Direct formation of thin films and epitaxial overlayers at low temperatures using a low-energy (10-500 eV) ion beam deposition system

    International Nuclear Information System (INIS)

    Zuhr, R.A.; Alton, G.D.; Appleton, B.R.; Herbots, N.; Noggle, T.S.; Pennycook, S.J.

    1987-01-01

    A low-energy ion beam deposition system has been developed at Oak Ridge National Laboratory and has been applied successfully to the growth of epitaxial films at low temperatures for a number of different elements. The deposition system utilizes the ion source and optics of a commercial ion implantation accelerator. The 35 keV mass- and energy-analyzed ion beam from the accelerator is decelerated in a four-element electrostatic lens assembly to energies between 10 and 500 eV for direct deposition onto a target under UHV conditions. Current densities on the order of 10 μA/cm 2 are achieved with good uniformity over a 1.4 cm diameter spot. The completed films are characterized by Rutherford backscattering, ion channeling, cross-section transmission electron microscopy, and x-ray diffraction. The effects of substrate temperature, ion energy, and substrate cleaning have been studied. Epitaxial overlayers which show good minimum yields by ion channeling (3 to 4%) have been produced at temperatures as low as 375 0 C for Si on Si(100) and 250 0 C for Ge on Ge(100) at growth rates that exceed the solid-phase epitaxy rates at these temperatures by more than an order of magnitude

  8. CBE growth of high-quality ZnO epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2006-03-15

    Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  9. Continuous epitaxial growth of extremely strong Cu6Sn5 textures at liquid-Sn/(111)Cu interface under temperature gradient

    Science.gov (United States)

    Zhong, Y.; Zhao, N.; Liu, C. Y.; Dong, W.; Qiao, Y. Y.; Wang, Y. P.; Ma, H. T.

    2017-11-01

    As the diameter of solder interconnects in three-dimensional integrated circuits (3D ICs) downsizes to several microns, how to achieve a uniform microstructure with thousands of interconnects on stacking chips becomes a critical issue in 3D IC manufacturing. We report a promising way for fabricating fully intermetallic interconnects with a regular grain morphology and a strong texture feature by soldering single crystal (111) Cu/Sn/polycrystalline Cu interconnects under the temperature gradient. Continuous epitaxial growth of η-Cu6Sn5 at cold end liquid-Sn/(111)Cu interfaces has been demonstrated. The resultant η-Cu6Sn5 grains show faceted prism textures with an intersecting angle of 60° and highly preferred orientation with their ⟨ 11 2 ¯ 0 ⟩ directions nearly paralleling to the direction of the temperature gradient. These desirable textures are maintained even after soldering for 120 min. The results pave the way for controlling the morphology and orientation of interfacial intermetallics in 3D packaging technologies.

  10. High resolution x-ray diffraction analysis of annealed low-temperature gallium arsenide

    Science.gov (United States)

    Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

    1992-05-01

    High resolution x-ray diffraction methods have been used to characterize GaAs grown at low substrate temperatures by molecular beam epitaxy and to examine the effects of post-growth annealing on the structure of the layers. Double crystal rocking curves from the as-deposited epitaxial layer show well-defined interference fringes, indicating a high level of structural perfection despite the presence of excess arsenic. Annealing at temperatures from 700 to 900 °C resulted in a decrease in the perpendicular lattice mismatch between the GaAs grown at low temperature and the substrate from 0.133% to 0.016% and a decrease (but not total elimination) of the visibility of the interference fringes. Triple-crystal diffraction scans around the 004 point in reciprocal space exhibited an increase in the apparent mosaic spread of the epitaxial layer with increasing anneal temperature. The observations are explained in terms of the growth of arsenic precipitates in the epitaxial layer.

  11. Low-temperature liquid-phase epitaxy and optical waveguiding of rare-earth-ion-doped KY(WO4)2 thin layers

    NARCIS (Netherlands)

    Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Apostolopoulos, V.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, B.

    2004-01-01

    Crystalline $KY(WO_{4})_{2}$ thin layers doped with different rare-earth ions were grown on b-oriented, undoped $KY(WO_{4})_{2}$ substrates by liquid-phase epitaxy employing a low-temperature flux. The ternary chloride mixture of NaCl, KCl, and CsCl with a melting point of 480°C was used as a

  12. High temperature materials; Materiaux a hautes temperatures

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2003-07-01

    The aim of this workshop is to share the needs of high temperature and nuclear fuel materials for future nuclear systems, to take stock of the status of researches in this domain and to propose some cooperation works between the different research organisations. The future nuclear systems are the very high temperature (850 to 1200 deg. C) gas cooled reactors (GCR) and the molten salt reactors (MSR). These systems include not only the reactor but also the fabrication and reprocessing of the spent fuel. This document brings together the transparencies of 13 communications among the 25 given at the workshop: 1) characteristics and needs of future systems: specifications, materials and fuel needs for fast spectrum GCR and very high temperature GCR; 2) high temperature materials out of neutron flux: thermal barriers: materials, resistance, lifetimes; nickel-base metal alloys: status of knowledge, mechanical behaviour, possible applications; corrosion linked with the gas coolant: knowledge and problems to be solved; super-alloys for turbines: alloys for blades and discs; corrosion linked with MSR: knowledge and problems to be solved; 3) materials for reactor core structure: nuclear graphite and carbon; fuel assembly structure materials of the GCR with fast neutron spectrum: status of knowledge and ceramics and cermets needs; silicon carbide as fuel confinement material, study of irradiation induced defects; migration of fission products, I and Cs in SiC; 4) materials for hydrogen production: status of the knowledge and needs for the thermochemical cycle; 5) technologies: GCR components and the associated material needs: compact exchangers, pumps, turbines; MSR components: valves, exchangers, pumps. (J.S.)

  13. Development of materials for high temperature superconductor Josephson junctions

    International Nuclear Information System (INIS)

    Houlton, R.J.; Reagor, D.W.; Hawley, M.E.; Springer, K.N.; Jia, Q.X.; Mombourquette, C.B.; Garzon, F.H.; Wu, X.D.

    1994-01-01

    We have conducted a systematic optimization of deposition parameters for fabrication of multilayered oxide films to be used in the development of high temperature superconducting SNS Functions. These films were deposited by off-axis sputtering using a custom fabricated multi-gun planar magnetron system. Each material and the various combinations of materials were optimized for epitaxial lattice match, crystal quality, film uniformity, electrical properties, and surface microstructure. In addition to the standard procedures commonly used to sputter deposit epitaxial oxide films, a variety of insitu and exsitu procedures were used to produce high quality multilayer devices, including varying the nucleation temperature from the actual film growth temperature, location of the substrate during the deposition process, constant rotation of the substrate, and timing of the oxygen anneal. The unprocessed films and devices in process were characterized with Atomic Force Microscopy and Scanning Tunneling Microscopy as well as other common materials characterization techniques. Completed multilayer devices were patterned and packaged for electrical characterization. Relation between material properties and electrical characteristics is discussed

  14. Development of materials for high temperature superconductor Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Houlton, R.J.; Reagor, D.W.; Hawley, M.E.; Springer, K.N.; Jia, Q.X.; Mombourquette, C.B.; Garzon, F.H.; Wu, X.D.

    1994-10-01

    We have conducted a systematic optimization of deposition parameters for fabrication of multilayered oxide films to be used in the development of high temperature superconducting SNS Functions. These films were deposited by off-axis sputtering using a custom fabricated multi-gun planar magnetron system. Each material and the various combinations of materials were optimized for epitaxial lattice match, crystal quality, film uniformity, electrical properties, and surface microstructure. In addition to the standard procedures commonly used to sputter deposit epitaxial oxide films, a variety of insitu and exsitu procedures were used to produce high quality multilayer devices, including varying the nucleation temperature from the actual film growth temperature, location of the substrate during the deposition process, constant rotation of the substrate, and timing of the oxygen anneal. The unprocessed films and devices in process were characterized with Atomic Force Microscopy and Scanning Tunneling Microscopy as well as other common materials characterization techniques. Completed multilayer devices were patterned and packaged for electrical characterization. Relation between material properties and electrical characteristics is discussed

  15. Unit cell determination of epitaxial thin films based on reciprocal space vectors by high-resolution X-ray diffractometry

    OpenAIRE

    Yang, Ping; Liu, Huajun; Chen, Zuhuang; Chen, Lang; Wang, John

    2013-01-01

    A new approach, based on reciprocal space vectors (RSVs), is developed to determine Bravais lattice types and accurate lattice parameters of epitaxial thin films by high-resolution X-ray diffractometry (HR-XRD). The lattice parameters of single crystal substrates are employed as references to correct the systematic experimental errors of RSVs of thin films. The general procedure is summarized, involving correction of RSVs, derivation of raw unit cell, subsequent conversion to the Niggli unit ...

  16. Development of High Temperature/High Sensitivity Novel Chemical Resistive Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chunrui [Univ. of Texas, San Antonio, TX (United States); Enriquez, Erik [Univ. of Texas, San Antonio, TX (United States); Wang, Haibing [Univ. of Texas, San Antonio, TX (United States); Xu, Xing [Univ. of Texas, San Antonio, TX (United States); Bao, Shangyong [Univ. of Texas, San Antonio, TX (United States); Collins, Gregory [Univ. of Texas, San Antonio, TX (United States)

    2013-08-13

    The research has been focused to design, fabricate, and develop high temperature/high sensitivity novel multifunctional chemical sensors for the selective detection of fossil energy gases used in power and fuel systems. By systematically studying the physical properties of the LnBaCo2O5+d (LBCO) [Ln=Pr or La] thin-films, a new concept chemical sensor based high temperature chemical resistant change has been developed for the application for the next generation highly efficient and near zero emission power generation technologies. We also discovered that the superfast chemical dynamic behavior and an ultrafast surface exchange kinetics in the highly epitaxial LBCO thin films. Furthermore, our research indicates that hydrogen can superfast diffuse in the ordered oxygen vacancy structures in the highly epitaxial LBCO thin films, which suggest that the LBCO thin film not only can be an excellent candidate for the fabrication of high temperature ultra sensitive chemical sensors and control systems for power and fuel monitoring systems, but also can be an excellent candidate for the low temperature solid oxide fuel cell anode and cathode materials.

  17. High Temperature Superconductor Resonator Detectors

    Data.gov (United States)

    National Aeronautics and Space Administration — High Temperature Superconductor (HTS) infrared detectors were studied for years but never matured sufficiently for infusion into instruments. Several recent...

  18. High Temperature Superconductor Machine Prototype

    DEFF Research Database (Denmark)

    Mijatovic, Nenad; Jensen, Bogi Bech; Træholt, Chresten

    2011-01-01

    A versatile testing platform for a High Temperature Superconductor (HTS) machine has been constructed. The stationary HTS field winding can carry up to 10 coils and it is operated at a temperature of 77K. The rotating armature is at room temperature. Test results and performance for the HTS field...

  19. Single-mode molecular beam epitaxy grown PbEuSeTe/PbTe buried-heterostructure diode lasers for CO2 high-resolution spectroscopy

    International Nuclear Information System (INIS)

    Feit, Z.; Kostyk, D.; Woods, R.J.; Mak, P.

    1991-01-01

    Buried-heterostructure tunable PbEuSeTe/PbTe lasers were fabricated using a two-stage molecular beam epitaxy growth procedure. Improvements in the processing technique yielded lasers that show performance characteristics significantly better than those reported previously. A continuous wave (cw) operating temperature of 203 K was realized, which is the highest cw operating temperature ever reported for lead-chalcogenides diode lasers. This laser exhibited exceptionally low-threshold currents of 1.4 mA at 90 K and 43 mA at 160 K with single-mode operation for injection currents up to 30I th and 0.18 mW power at 100 K. The usefulness of the laser, when operating cw at 200 K, was demonstrated by the ability to perform high-resolution spectroscopy of a low-pressure CO 2 gas sample

  20. Effect of atomic-arrangement matching on La{sub 2}O{sub 3}/Ge heterostructures for epitaxial high-k-gate-stacks

    Energy Technology Data Exchange (ETDEWEB)

    Kanashima, T., E-mail: kanashima@ee.es.osaka-u.ac.jp; Zenitaka, M.; Kajihara, Y.; Yamada, S.; Hamaya, K. [Graduate School of Engineering Science, Osaka University, Machkaneyama 1-3, Toyonaka, Osaka 560-8531 (Japan); Nohira, H. [Tokyo City University, 1-28-1 Tamazutumi, Setagaya-ku, Tokyo 158-8557 (Japan)

    2015-12-14

    We demonstrate a high-quality La{sub 2}O{sub 3} layer on germanium (Ge) as an epitaxial high-k-gate-insulator, where there is an atomic-arrangement matching condition between La{sub 2}O{sub 3}(001) and Ge(111). Structural analyses reveal that (001)-oriented La{sub 2}O{sub 3} layers were grown epitaxially only when we used Ge(111) despite low growth temperatures less than 300 °C. The permittivity (k) of the La{sub 2}O{sub 3} layer is roughly estimated to be ∼19 from capacitance-voltage (C-V) analyses in Au/La{sub 2}O{sub 3}/Ge structures after post-metallization-annealing treatments, although the C-V curve indicates the presence of carrier traps near the interface. By using X-ray photoelectron spectroscopy analyses, we find that only Ge–O–La bonds are formed at the interface, and the thickness of the equivalent interfacial Ge oxide layer is much smaller than that of GeO{sub 2} monolayer. We discuss a model of the interfacial structure between La{sub 2}O{sub 3} and Ge(111) and comment on the C-V characteristics.

  1. Resistivity Effects of Cation Ordering in Highly-Doped La2-xSrxCu4 Epitaxial Thin Films

    Science.gov (United States)

    Burquest, Franklin; Marmol, Rodrigo; Cox, Nicholas; Nelson-Cheeseman, Brittany

    Highly-doped La2-xSrxCuO4 (LSCO) films (0.5 causes internal polar electrostatic forces, which have been shown to cause stretching of the apical oxygen bond in analogous epitaxial nickelate films. Thin film samples are grown concurrently to minimize extraneous effects on film structure and properties. Atomic force microscopy and x-ray reflectivity demonstrate that the films are single crystalline, epitaxial, and smooth. X-ray diffraction is used to measure the c-axis of the films as a function of doping and dopant cation ordering. Electrical transport data of the ordered samples is compared with transport data of conventional disordered cation samples. Preliminary data indicates significant differences in resistivity at both 300K and 10K between the cation-ordered and cation-disordered samples. This work indicates that dopant cation ordering within the layered cuprates could significantly modify the conduction mechanisms at play in these materials.

  2. Highly sensitive x-ray detectors in the low-energy range on n-type 4H-SiC epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    Mandal, Krishna C.; Muzykov, Peter G. [Department of Electrical Engineering, University of South Carolina, Columbia, South Carolina 29208 (United States); Russell Terry, J. [Space Science and Applications Group (ISR-1), Intelligence and Space Research Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)

    2012-07-30

    Schottky diodes on n-type 4H-SiC epitaxial layers have been fabricated for low-energy x-ray detection. The detectors were highly sensitive to soft x-rays and showed improved response compared to the commercial SiC UV photodiodes. Current-voltage characteristics at 475 K showed low leakage current revealing the possibility of high temperature operation. The high quality of the epi-layer was confirmed by x-ray diffraction and chemical etching. Thermally stimulated current measurements performed at 94-550 K revealed low density of deep levels which may cause charge trapping. No charge trapping on detectors' responsivity in the low x-ray energy was found.

  3. AASERT: Rare Earth Arsenides, Magnetic Semi-Metal Epitaxy for Opto-Electronics

    National Research Council Canada - National Science Library

    Palmstrom, Chris

    2000-01-01

    ...). An ultra-high vacuum sample transfer system and a variable temperature scanning tunneling microscope were attached to two already existing molecular beam epitaxy systems and surface science equipment...

  4. A high resolution cross section transmission electron microscopy study of epitaxial rare earth fluoride/GaAs(111) interfaces prepared by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Chien, C.J.; Bravman, J.C.

    1990-01-01

    The authors report the HRXTEM study of epitaxial rare earth fluoride/GaAs(111) interfaces. Such interfaces are of interest because they are the starting point for growth of buried epitaxial rare earth/rare earth fluoride sandwich structures which exhibit interesting and non bulk-like magnetic properties. Also, the optical transitions in ultrathin epitaxial NdF 3 films may be influenced by strain and defects in the NdF 3 film and the nature of the interface to GaAs. The authors find that the rare earth fluoride/GaAs interfaces are semi-coherent but chemically abrupt with the transition taking place within 3 Angstrom. However, the interface is physically rough and multiple monolayer steps in the GaAs surface tend to tilt boundaries in the fluoride. The origin of these steps is believed to be thermal etching of the GaAs during the heat- cleaning stage prior to epitaxy. The surface of the fluoride film is much smoother than the initial GaAs surface indicating planarization during epitaxy

  5. Epitaxial Graphene: A New Material for Electronics

    Science.gov (United States)

    de Heer, Walt A.

    2007-10-01

    Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

  6. Temperature dependence of optical transitions in Al xGa1-xAs/GaAs quantum well structures grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Caballero-Rosas, A.; Mejia-Garcia, C.; Contreras-Puente, G.; Lopez-Lopez, M.

    2005-01-01

    Quantum well (QW) structures of Al x Ga 1-x As/GaAs were characterized by photoluminescence technique as a function of the temperature between 10 and 300 K. The structures were grown on a 500 nm thick GaAs buffer layer with Molecular Beam Epitaxy technique. We have studied the properties of in-situ Cl 2 -etched GaAs surfaces and overgrown QW structures as a function of the etching temperature (70 and 200 deg. C). Several models were used to fit the experimental points. Best fit to experimental points was obtained with the Paessler model

  7. Advanced High Temperature Structural Seals

    Science.gov (United States)

    Newquist, Charles W.; Verzemnieks, Juris; Keller, Peter C.; Rorabaugh, Michael; Shorey, Mark

    2002-10-01

    This program addresses the development of high temperature structural seals for control surfaces for a new generation of small reusable launch vehicles. Successful development will contribute significantly to the mission goal of reducing launch cost for small, 200 to 300 pound payloads. Development of high temperature seals is mission enabling. For instance, ineffective control surface seals can result in high temperature (3100 F) flows in the elevon area exceeding structural material limits. Longer sealing life will allow use for many missions before replacement, contributing to the reduction of hardware, operation and launch costs.

  8. Defect distribution in low-temperature molecular beam epitaxy grown Si/Si(100), improved depth profiling with monoenergetic positrons

    International Nuclear Information System (INIS)

    Szeles, C.; Asoka-Kumar, P.; Lynn, K.G.; Gossmann, H.; Unterwald, F.C.; Boone, T.

    1995-01-01

    The depth distribution of open-volume defects has been studied in Si(100) crystals grown by molecular beam epitaxy at 300 degree C by the variable-energy monoenergetic positron beam technique combined with well-controlled chemical etching. This procedure gave a 10 nm depth resolution which is a significant improvement over the inherent depth resolving power of the positron beam technique. The epitaxial layer was found to grow defect-free up to 80 nm, from the interface, where small vacancy clusters, larger than divacancies, appear. The defect density then sharply increases toward the film surface. The result clearly shows that the nucleation of small open-volume defects is a precursor state to the breakdown of epitaxy and to the evolution of an amorphous film

  9. HIGH TEMPERATURE POLYMER FUEL CELLS

    DEFF Research Database (Denmark)

    Jensen, Jens Oluf; Qingfeng, Li; He, Ronghuan

    2003-01-01

    This paper will report recent results from our group on polymer fuel cells (PEMFC) based on the temperature resistant polymer polybenzimidazole (PBI), which allow working temperatures up to 200°C. The membrane has a water drag number near zero and need no water management at all. The high working...

  10. Insight into the epitaxial growth of high optical quality GaAs{sub 1–x}Bi{sub x}

    Energy Technology Data Exchange (ETDEWEB)

    Beaton, D. A., E-mail: daniel.beaton@nrel.gov; Mascarenhas, A.; Alberi, K. [National Renewable Energy Laboratory (NREL), Golden, Colorado 80401 (United States)

    2015-12-21

    The ternary alloy GaAs{sub 1–x}Bi{sub x} is a potentially important material for infrared light emitting devices, but its use has been limited by poor optical quality. We report on the synthesis of GaAs{sub 1–x}Bi{sub x} epi-layers that exhibit narrow, band edge photoluminescence similar to other ternary GaAs based alloys, e.g., In{sub y}Ga{sub 1–y}As. The measured spectral linewidths are as low as 14 meV and 37 meV at low temperature (6 K) and room temperature, respectively, and are less than half of previously reported values. The improved optical quality is attributed to the use of incident UV irradiation of the epitaxial surface and the presence of a partial surface coverage of bismuth in a surfactant layer during epitaxy. Comparisons of samples grown under illuminated and dark conditions provide insight into possible surface processes that may be altered by the incident UV light. The improved optical quality now opens up possibilities for the practical use of GaAs{sub 1–x}Bi{sub x} in optoelectronic devices.

  11. High Temperature Materials Laboratory (HTML)

    Data.gov (United States)

    Federal Laboratory Consortium — The six user centers in the High Temperature Materials Laboratory (HTML), a DOE User Facility, are dedicated to solving materials problems that limit the efficiency...

  12. High temperature divertor plasma operation

    International Nuclear Information System (INIS)

    Ohyabu, Nobuyoshi.

    1991-02-01

    High temperature divertor plasma operation has been proposed, which is expected to enhance the core energy confinement and eliminates the heat removal problem. In this approach, the heat flux is guided through divertor channel to a remote area with a large target surface, resulting in low heat load on the target plate. This allows pumping of the particles escaping from the core and hence maintaining of the high divertor temperature, which is comparable to the core temperature. The energy confinement is then determined by the diffusion coefficient of the core plasma, which has been observed to be much lower than the thermal diffusivity. (author)

  13. High temperature high vacuum creep testing facilities

    International Nuclear Information System (INIS)

    Matta, M.K.

    1985-01-01

    Creep is the term used to describe time-dependent plastic flow of metals under conditions of constant load or stress at constant high temperature. Creep has an important considerations for materials operating under stresses at high temperatures for long time such as cladding materials, pressure vessels, steam turbines, boilers,...etc. These two creep machines measures the creep of materials and alloys at high temperature under high vacuum at constant stress. By the two chart recorders attached to the system one could register time and temperature versus strain during the test . This report consists of three chapters, chapter I is the introduction, chapter II is the technical description of the creep machines while chapter III discuss some experimental data on the creep behaviour. Of helium implanted stainless steel. 13 fig., 3 tab

  14. Single photon emission up to liquid nitrogen temperature from charged excitons confined in GaAs-based epitaxial nanostructures

    NARCIS (Netherlands)

    Dusanowski, L.; Syperek, M.; Marynski, A.; Li, L.H.; Misiewicz, J.; Höfling, S.; Kamp, M.; Fiore, A.; Sek, G.

    2015-01-01

    We demonstrate a non-classical photon emitter at near infrared wavelength based on a single (In,Ga)As/GaAs epitaxially grown columnar quantum dot. Charged exciton complexes have been identified in magneto-photoluminescence. Photon auto-correlation histograms from the recombination of a trion

  15. Approaching the Dirac point in high-mobility multilayer epitaxial graphene

    Czech Academy of Sciences Publication Activity Database

    Orlita, Milan; Faugeras, C.; Plochocka, P.; Neugebauer, P.; Martinez, G.; Maude, D. K.; Barra, A. L.; Sprinkle, M.; Berger, C.; de Heer, W.A.; Potemski, M.

    2008-01-01

    Roč. 101, č. 26 (2008), 267601/1-267601/4 ISSN 0031-9007 R&D Projects: GA AV ČR KAN400100652 Grant - others:EU(XE) RITA -CT-2003-505474 Institutional research plan: CEZ:AV0Z10100521 Keywords : multilayer epitaxial graphene * Dirac fermions * magnetic field Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.180, year: 2008

  16. High temperature corrosion of metals

    International Nuclear Information System (INIS)

    Quadakkers, W.J.; Schuster, H.; Ennis, P.J.

    1988-08-01

    This paper covers three main topics: 1. high temperature oxidation of metals and alloys, 2. corrosion in sulfur containing environments and 3. structural changes caused by corrosion. The following 21 subjects are discussed: Influence of implanted yttrium and lanthanum on the oxidation behaviour of beta-NiA1; influence of reactive elements on the adherence and protective properties of alumina scales; problems related to the application of very fine markers in studying the mechanism of thin scale formation; oxidation behaviour of chromia forming Co-Cr-Al alloys with or without reactive element additions; growth and properties of chromia-scales on high-temperature alloys; quantification of the depletion zone in high temperature alloys after oxidation in process gas; effects of HC1 and of N2 in the oxidation of Fe-20Cr; investigation under nuclear safety aspects of Zircaloy-4 oxidation kinetics at high temperatures in air; on the sulfide corrosion of metallic materials; high temperature sulfide corrosion of Mn, Nb and Nb-Si alloys; corrosion behaviour or NiCrAl-based alloys in air and air-SO2 gas mixtures; sulfidation of cobalt at high temperatures; preoxidation for sulfidation protection; fireside corrosion and application of additives in electric utility boilers; transport properties of scales with complex defect structures; observations of whiskers and pyramids during high temperature corrosion of iron in SO2; corrosion and creep of alloy 800H under simulated coal gasification conditions; microstructural changes of HK 40 cast alloy caused by exploitation in tubes in steam reformer installation; microstructural changes during exposure in corrosive environments and their effect on mechanical properties; coatings against carburization; mathematical modeling of carbon diffusion and carbide precipitation in Ni-Cr-based alloys. (MM)

  17. Highly Crystalline C8-BTBT Thin-Film Transistors by Lateral Homo-Epitaxial Growth on Printed Templates.

    Science.gov (United States)

    Janneck, Robby; Pilet, Nicolas; Bommanaboyena, Satya Prakash; Watts, Benjamin; Heremans, Paul; Genoe, Jan; Rolin, Cedric

    2017-11-01

    Highly crystalline thin films of organic semiconductors offer great potential for fundamental material studies as well as for realizing high-performance, low-cost flexible electronics. The fabrication of these films directly on inert substrates is typically done by meniscus-guided coating techniques. The resulting layers show morphological defects that hinder charge transport and induce large device-to-device variability. Here, a double-step method for organic semiconductor layers combining a solution-processed templating layer and a lateral homo-epitaxial growth by a thermal evaporation step is reported. The epitaxial regrowth repairs most of the morphological defects inherent to meniscus-guided coatings. The resulting film is highly crystalline and features a mobility increased by a factor of three and a relative spread in device characteristics improved by almost half an order of magnitude. This method is easily adaptable to other coating techniques and offers a route toward the fabrication of high-performance, large-area electronics based on highly crystalline thin films of organic semiconductors. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. High temperature electronic gain device

    International Nuclear Information System (INIS)

    McCormick, J.B.; Depp, S.W.; Hamilton, D.J.; Kerwin, W.J.

    1979-01-01

    An integrated thermionic device suitable for use in high temperature, high radiation environments is described. Cathode and control electrodes are deposited on a first substrate facing an anode on a second substrate. The substrates are sealed to a refractory wall and evacuated to form an integrated triode vacuum tube

  19. RPC operation at high temperature

    CERN Document Server

    Aielli, G; Cardarelli, R; Di Ciaccio, A; Di Stante, L; Liberti, B; Paoloni, A; Pastori, E; Santonico, R

    2003-01-01

    The resistive electrodes of RPCs utilised in several current experiments (ATLAS, CMS, ALICE, BABAR and ARGO) are made of phenolic /melaminic polymers, with room temperature resistivities ranging from 10**1**0 Omega cm, for high rate operation in avalanche mode, to 5 multiplied by 10**1**1 Omega cm, for streamer mode operation at low rate. The resistivity has however a strong temperature dependence, decreasing exponentially with increasing temperature. We have tested several RPCs with different electrode resistivities in avalanche as well as in streamer mode operation. The behaviours of the operating current and of the counting rate have been studied at different temperatures. Long-term operation has also been studied at T = 45 degree C and 35 degree C, respectively, for high and low resistivity electrodes RPCs.

  20. Ion beam deposited epitaxial thin silicon films

    International Nuclear Information System (INIS)

    Orrman-Rossiter, K.G.; Al-Bayati, A.H.; Armour, D.G.; Donnelly, S.E.; Berg, J.A. van den

    1991-01-01

    Deposition of thin films using low energy, mass-separated ion beams is a potentially important low temperature method of producing epitaxial layers. In these experiments silicon films were grown on Si (001) substrates using 10-200 eV 28 Si + and 30 Si + ions at substrate temperatures in the range 273-1073 K, under ultrahigh-vacuum conditions (deposition pressure -7 Pa). The film crystallinity was assessed in situ using medium energy ion scattering (MEIS). Films of crystallinity comparable to bulk samples were grown using 10-40 eV 28 Si + and 30 Si + ions at deposition temperatures in the range 623-823 K. These experiments confirmed the role of key experimental parameters such as ion energy, substrate temperature during deposition, and the surface treatment prior to deposition. It was found that a high temperature in situ anneal (1350-1450 K) gave the best results for epitaxial nucleation, whereas low energy (20-40 eV) Cl + ion bombardment resulted in amorphous film growth. The deposition energy for good epitaxial growth indicates that it is necessary to provide enough energy to induce local mobility but not to cause atomic displacements leading to the buildup of stable defects, e.g. divacancies, below the surface layer of the growing film. (orig.)

  1. HIgh Temperature Photocatalysis over Semiconductors

    Science.gov (United States)

    Westrich, Thomas A.

    Due in large part to in prevalence of solar energy, increasing demand of energy production (from all sources), and the uncertain future of petroleum energy feedstocks, solar energy harvesting and other photochemical systems will play a major role in the developing energy market. This dissertation focuses on a novel photochemical reaction process: high temperature photocatalysis (i.e., photocatalysis conducted above ambient temperatures, T ≥ 100°C). The overarching hypothesis of this process is that photo-generated charge carriers are able to constructively participate in thermo-catalytic chemical reactions, thereby increasing catalytic rates at one temperature, or maintaining catalytic rates at lower temperatures. The photocatalytic oxidation of carbon deposits in an operational hydrocarbon reformer is one envisioned application of high temperature photocatalysis. Carbon build-up during hydrocarbon reforming results in catalyst deactivation, in the worst cases, this was shown to happen in a period of minutes with a liquid hydrocarbon. In the presence of steam, oxygen, and above-ambient temperatures, carbonaceous deposits were photocatalytically oxidized over very long periods (t ≥ 24 hours). This initial experiment exemplified the necessity of a fundamental assessment of high temperature photocatalytic activity. Fundamental understanding of the mechanisms that affect photocatalytic activity as a function of temperatures was achieved using an ethylene photocatalytic oxidation probe reaction. Maximum ethylene photocatalytic oxidation rates were observed between 100 °C and 200 °C; the maximum photocatalytic rates were approximately a factor of 2 larger than photocatalytic rates at ambient temperatures. The loss of photocatalytic activity at temperatures above 200 °C is due to a non-radiative multi-phonon recombination mechanism. Further, it was shown that the fundamental rate of recombination (as a function of temperature) can be effectively modeled as a

  2. High temperature thermoelectric energy conversion

    International Nuclear Information System (INIS)

    Wood, C.

    1986-01-01

    Considerable advances were made in the late '50's and early early '60's in the theory and development of materials for high-temperature thermoelectric energy conversion. This early work culminated in a variety of materials, spanning a range of temperatures, with the product of the figure of merit, Z, and temperature, T, i.e., the dimensionless figure of merit, ZT, of the order of one. This experimental limitation appeared to be universal and led a number of investigators to explore the possibility that a ZT - also represents a theoretical limitation. It was found not to be so

  3. High Temperature Transparent Furnace Development

    Science.gov (United States)

    Bates, Stephen C.

    1997-01-01

    This report describes the use of novel techniques for heat containment that could be used to build a high temperature transparent furnace. The primary objective of the work was to experimentally demonstrate transparent furnace operation at 1200 C. Secondary objectives were to understand furnace operation and furnace component specification to enable the design and construction of a low power prototype furnace for delivery to NASA in a follow-up project. The basic approach of the research was to couple high temperature component design with simple concept demonstration experiments that modify a commercially available transparent furnace rated at lower temperature. A detailed energy balance of the operating transparent furnace was performed, calculating heat losses through the furnace components as a result of conduction, radiation, and convection. The transparent furnace shells and furnace components were redesigned to permit furnace operation at at least 1200 C. Techniques were developed that are expected to lead to significantly improved heat containment compared with current transparent furnaces. The design of a thermal profile in a multizone high temperature transparent furnace design was also addressed. Experiments were performed to verify the energy balance analysis, to demonstrate some of the major furnace improvement techniques developed, and to demonstrate the overall feasibility of a high temperature transparent furnace. The important objective of the research was achieved: to demonstrate the feasibility of operating a transparent furnace at 1200 C.

  4. Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

    International Nuclear Information System (INIS)

    Chang, Yongwei; Zhang, Miao; Deng, Chuang; Men, Chuanling; Chen, Da; Zhu, Lei; Yu, Wenjie; Wei, Xing; Di, Zengfeng; Wang, Xi

    2015-01-01

    Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10 17 cm −2 , the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10 17 cm −2 . • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10 17 cm −2 , the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10 17 cm −2 H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF 6 plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era

  5. Fabrication of high quality GaAs-on-insulator via ion-cut of epitaxial GaAs/Ge heterostructure

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Yongwei; Zhang, Miao [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Deng, Chuang; Men, Chuanling [School of Energy and Power Engineering, University of Shanghai for Science and Technology, Shanghai 200093 (China); Chen, Da [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); School of Physical Science and Technology, Lanzhou University, Lanzhou 730000 (China); Zhu, Lei; Yu, Wenjie; Wei, Xing [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Di, Zengfeng, E-mail: zfdi@mail.sim.ac.cn [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China); Wang, Xi [State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 (China)

    2015-08-15

    Highlights: • GaAs-on-insulator has been achieved by integrating of epitaxy, ion-cut and selective chemical etching. • Superior to the direct ion-cut of bulk GaAs layer with the H implantation fluence 2.0 × 10{sup 17} cm{sup −2}, the fabrication of GaAs-on-insulator by the transfer of GaAs/Ge heterostructure only needs H implantation fluence as low as 0.8 × 10{sup 17} cm{sup −2}. • The crystalline quality of the top GaAs layer of the final GaAs-on-insulator wafer is not affected by the implantation process and comparable to the as-grown status. - Abstract: Due to the extraordinary electron mobility, III–V compounds are considered as the ideal candidate channel materials for future electronic devices. In this study, a novel approach for the fabrication of high-crystalline quality GaAs-on-insulator has been proposed by integrating of ion-cut and selective chemical etching. GaAs layer with good crystalline quality has been epitaxially grown on Ge by molecular beam epitaxy (MBE). With H implantation and wafer bonding process, the GaAs/Ge heterostructure is transferred onto silicon dioxide wafer after the proper thermal treatment. Superior to the direct ion-cut of GaAs layer, which requires the H implantation fluence as high as 2.0 × 10{sup 17} cm{sup −2}, the transfer of GaAs/Ge heterostructure in the present study only needs the implantation of 0.8 × 10{sup 17} cm{sup −2} H ions. GaAs-on-insulator structure was successfully achieved by the selective chemical etching of defective Ge layer using SF{sub 6} plasma. As the GaAs/Ge heterostructure can be easily epitaxy grown on silicon platform, the proposed approach for GaAs-on-insulator manufacturing is rather compatible with mature Si integrated circuits (ICs) technology and thus can be integrated to push the microelectronic technology to post-Si era.

  6. "Green" High-Temperature Polymers

    Science.gov (United States)

    Meador, Michael A.

    1998-01-01

    PMR-15 is a processable, high-temperature polymer developed at the NASA Lewis Research Center in the 1970's principally for aeropropulsion applications. Use of fiber-reinforced polymer matrix composites in these applications can lead to substantial weight savings, thereby leading to improved fuel economy, increased passenger and payload capacity, and better maneuverability. PMR-15 is used fairly extensively in military and commercial aircraft engines components seeing service temperatures as high as 500 F (260 C), such as the outer bypass duct for the F-404 engine. The current world-wide market for PMR-15 materials (resins, adhesives, and composites) is on the order of $6 to 10 million annually.

  7. High-temperature metallography setup

    International Nuclear Information System (INIS)

    Blumenfeld, M.; Shmarjahu, D.; Elfassy, S.

    1979-06-01

    A high-temperature metallography setup is presented. In this setup the observation of processes such as that of copper recrystallization was made possible, and the structure of metals such as uranium could be revealed. A brief historical review of part of the research works that have been done with the help of high temperature metallographical observation technique since the beginning of this century is included. Detailed description of metallographical specimen preparation technique and theoretical criteria based on the rate of evaporation of materials present on the polished surface of the specimens are given

  8. High temperature corrosion in gasifiers

    Directory of Open Access Journals (Sweden)

    Bakker Wate

    2004-01-01

    Full Text Available Several commercial scale coal gasification combined cycle power plants have been built and successfully operated during the last 5-10 years. Supporting research on materials of construction has been carried out for the last 20 years by EPRI and others. Emphasis was on metallic alloys for heat exchangers and other components in contact with hot corrosive gases at high temperatures. In this paper major high temperature corrosion mechanisms, materials performance in presently operating gasifiers and future research needs will be discussed.

  9. Quantum Nanostructures by Droplet Epitaxy

    Directory of Open Access Journals (Sweden)

    Somsak Panyakeow

    2009-02-01

    Full Text Available Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350'C. Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created. Quantum rings with isotropic shape are obtained at low temperature range. When the growth thickness is increased, quantum rings are transformed to quantum dot rings. At high temperature range, anisotropic strain gives rise to quantum rings with square holes and non-uniform ring stripe. Regrowth of quantum dots on these anisotropic quantum rings, Quadra-Quantum Dots (QQDs could be realized. Potential applications of these quantum nanostructures are also discussed.

  10. High temperature creep of vanadium

    International Nuclear Information System (INIS)

    Juhasz, A.; Kovacs, I.

    1978-01-01

    The creep behaviour of polycrystalline vanadium of 99.7% purity has been investigated in the temperature range 790-880 0 C in a high temperature microscope. It was found that the creep properties depend strongly on the history of the sample. To take this fact into account some additional properties such as the dependence of the yield stress and the microhardness on the pre-annealing treatment have also been studied. Samples used in creep measurements were selected on the basis of their microhardness. The activation energy of creep depends on the microhardness and on the creep temperature. In samples annealed at 1250 0 C for one hour (HV=160 kgf mm -2 ) the rate of creep is controlled by vacancy diffusion in the temperature range 820-880 0 C with an activation energy of 78+-8 kcal mol -1 . (Auth.)

  11. Cu-doped AlN: A possible spinaligner at room-temperature grown by molecular beam epitaxy?

    Science.gov (United States)

    Ganz, P. R.; Schaadt, D. M.

    2011-12-01

    Cu-doped AlN was prepared by plasma assisted molecular beam epitaxy on C-plane sapphire substrates. The growth conditions were investigated for different Cu to Al flux ratios from 1.0% to 4.0%. The formation of Cu-Al alloys on the surface was observed for all doping level. In contrast to Cu-doped GaN, all samples showed diamagnetic behavior determined by SQUID measurements.

  12. Photoluminescence and surface photovoltage spectroscopy characterization of highly strained InGaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

    International Nuclear Information System (INIS)

    Chan, C.H.; Wu, J.D.; Huang, Y.S.; Hsu, H.P.; Tiong, K.K.; Su, Y.K.

    2010-01-01

    Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained In x Ga 1-x As/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0.395 ≤ x ≤ 0.44) in the temperature range of 20 K ≤ T ≤ 300 K. The PL features show redshift in peak positions and broadened lineshape with increasing indium composition. The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW interfaces. A lineshape fit of features in the differential surface photovoltage (SPV) spectra has been used to determine the transition energies accurately. At temperature below 100 K, the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features. The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps. A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs. The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures.

  13. Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials

    Science.gov (United States)

    Jang, Seon-Min; Yang, Su Chul

    2018-06-01

    Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO2 epitaxial growth and BaTiO3 conversion. Through the TiO2 epitaxial growth on FTO substrate, (001) oriented TiO2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO2 NBA was conducted to enlarge the surface area for effective Ba2+ ion diffusion during the perovskite conversion process from TiO2 to BaTiO3. The final structure of perovskite BaTiO3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

  14. Highly piezoelectric BaTiO3 nanorod bundle arrays using epitaxially grown TiO2 nanomaterials.

    Science.gov (United States)

    Jang, Seon-Min; Yang, Su Chul

    2018-06-08

    Low-dimensional piezoelectric nanostructures such as nanoparticles, nanotubes, nanowires, nanoribbons and nanosheets have been developed for potential applications as energy harvesters, tunable sensors, functional transducers and low-power actuators. In this study, lead-free BaTiO 3 nanorod bundle arrays (NBA) with highly piezoelectric properties were successfully synthesized on fluorine-doped tin oxide (FTO) substrate via a two-step process consisting of TiO 2 epitaxial growth and BaTiO 3 conversion. Through the TiO 2 epitaxial growth on FTO substrate, (001) oriented TiO 2 nanostructures formed vertically-aligned NBA with a bundle diameter of 80 nm and an aspect ratio of six. In particular, chemical etching of the TiO 2 NBA was conducted to enlarge the surface area for effective Ba 2+ ion diffusion during the perovskite conversion process from TiO 2 to BaTiO 3 . The final structure of perovskite BaTiO 3 NBA was found to exhibit a feasible piezoelectric response of 3.56 nm with a clear phase change of 180° from the single BaTiO 3 bundle, by point piezoelectric forced microscopy (PFM) analysis. Consequently, highly piezoelectric NBA could be a promising nanostructure for various nanoscale electronic devices.

  15. High-resolution hydrogen profiling in AlGaN/GaN heterostructures grown by different epitaxial methods

    Energy Technology Data Exchange (ETDEWEB)

    Gonzalez-Posada Flores, F; Redondo-Cubero, A; Bengoechea, A; Brana, A F; Munoz, E [Instituto de Sistemas Optoelectronicos y Microtecnologia (ISOM) and Dpto. IngenierIa Electronica (DIE), ETSI de Telecomunicacion, Universidad Politecnica de Madrid, E-28040 Madrid (Spain); Gago, R [Centro de Micro-Analisis de Materiales, Universidad Autonoma de Madrid, E-28049 Madrid (Spain); Jimenez, A [Dpto. Electronica, Escuela Politecnica Superior, Universidad de Alcala, E-28805 Alcala de Henares, Madrid (Spain); Grambole, D, E-mail: fposada@die.upm.e [Institute of Ion Beam Physics and Materials Research, Forschungszentrum Dresden-Rossendorf, PF 51019, D-01314 Dresden (Germany)

    2009-03-07

    Hydrogen (H) incorporation into AlGaN/GaN heterostructures used in high electron mobility transistors, grown by different methods, is studied by high-resolution depth profiling. Samples grown on sapphire and Si(1 1 1) substrates by molecular-beam epitaxy and metal-organic vapour phase epitaxy; involving H-free and H-containing precursors, were analysed to evaluate the eventual incorporation of H into the wafer. The amount of H was measured by means of nuclear reaction analysis (NRA) using the {sup 1}H({sup 15}N,{alpha}{gamma}){sup 12}C reaction up to a depth of {approx}110 nm into the heterostructures. Interestingly, the H profiles are similar in all the samples analysed, with an increasing H content towards the surface and a negligible H incorporation into the GaN layer (0.24 {+-} 0.08 at%) or at the AlGaN/GaN interface. Therefore, NRA shows that H uptake is not related to the growth process or technique employed and that H contamination may be due to external sources after growth. The eventual correlation between topographical defects on the AlGaN surface and the H concentration are also discussed.

  16. Epitaxial growth of quantum rods with high aspect ratio and compositional contrast

    International Nuclear Information System (INIS)

    Li, L. H.; Patriarche, G.; Fiore, A.

    2008-01-01

    The epitaxial growth of quantum rods (QRs) on GaAs was investigated. It was found that GaAs thickness in the GaAs/InAs superlattice used for QR formation plays a key role in improving the QR structural properties. Increasing the GaAs thickness results in both an increased In compositional contrast between the QRs and surrounding layer, and an increased QR length. QRs with an aspect ratio of up to 10 were obtained, representing quasiquantum wires in a GaAs matrix. Due to modified confinement and strain potential, such nanostructure is promising for controlling gain polarization

  17. High-temperature plasma physics

    International Nuclear Information System (INIS)

    Furth, H.P.

    1988-03-01

    Both magnetic and inertial confinement research are entering the plasma parameter range of fusion reactor interest. This paper reviews the individual and common technical problems of these two approaches to the generation of thermonuclear plasmas, and describes some related applications of high-temperature plasma physics

  18. High-Temperature Vibration Damper

    Science.gov (United States)

    Clarke, Alan; Litwin, Joel; Krauss, Harold

    1987-01-01

    Device for damping vibrations functions at temperatures up to 400 degrees F. Dampens vibrational torque loads as high as 1,000 lb-in. but compact enough to be part of helicopter rotor hub. Rotary damper absorbs energy from vibrating rod, dissipating it in turbulent motion of viscous hydraulic fluid forced by moving vanes through small orifices.

  19. Containment of high temperature plasmas

    International Nuclear Information System (INIS)

    Bass, R.W.; Ferguson, H.R.P.; Fletcher, H. Jr.; Gardner, J.; Harrison, B.K.; Larsen, K.M.

    1973-01-01

    Apparatus is described for confining a high temperature plasma which comprises: 1) envelope means shaped to form a toroidal hollow chamber containing a plasma, 2) magnetic field line generating means for confining the plasma in a smooth toroidal shape without cusps. (R.L.)

  20. Chemistry of high temperature superconductors

    CERN Document Server

    1991-01-01

    This review volume contains the most up-to-date articles on the chemical aspects of high temperature oxide superconductors. These articles are written by some of the leading scientists in the field and includes a comprehensive list of references. This is an essential volume for researchers working in the fields of ceramics, materials science and chemistry.

  1. Properties of high temperature SQUIDS

    International Nuclear Information System (INIS)

    Falco, C.M.; Wu, C.T.

    1978-01-01

    A review is given of the present status of weak links and dc and rf biased SQUIDs made with high temperature superconductors. A method for producing reliable, reproducible devices using Nb 3 Sn is outlined, and comments are made on directions future work should take

  2. High temperature component life assessment

    CERN Document Server

    Webster, G A

    1994-01-01

    The aim of this book is to investigate and explain the rapid advances in the characterization of high temperature crack growth behaviour which have been made in recent years, with reference to industrial applications. Complicated mathematics has been minimized with the emphasis placed instead on finding solutions using simplified procedures without the need for complex numerical analysis.

  3. Growth of high mobility GaN and AlGaN/GaN high electron mobility transistor structures on 4H-SiC by ammonia molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Webb, James B.; Tang, H.; Bardwell, J. A.; Coleridge, P.

    2001-01-01

    Ammonia molecular-beam epitaxy has been used to grow high-quality epilayers of GaN and AlGaN/GaN heterostructure field-effect transistor (HFET) structures on insulating 4H-SiC. The growth process, which used a magnetron sputter epitaxy deposited buffer layer of AlN, has been described previously. Ex situ pretreatment of the SiC substrate was found to be unnecessary. For a single 2.0 μm thick silicon doped epilayer, a room temperature (RT) electron mobility of 500 cm2/Vs was measured at a carrier density of 6.6x10 16 cm -3 . For the HFET structure, a room temperature mobility of 1300 cm2/Vs at a sheet carrier density of 3.3x10 12 cm -2 was observed, increasing to 11000 cm2/Vs at 77 K. The surface morphology of the layers indicated a coalesced mesa structure similar to what we observed for growth on sapphire, but with a lower overall defect density and correspondingly larger grain size. The observation of well-resolved Shubnikov de Haas oscillations at fields as low as 3 T indicated a relatively smooth interface. [copyright] 2001 American Institute of Physics

  4. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    Science.gov (United States)

    Malinverni, M.; Lamy, J.-M.; Martin, D.; Feltin, E.; Dorsaz, J.; Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C.; Grandjean, N.

    2014-12-01

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH3-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10-4 Ω cm2, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH3-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm2 ridge dimension and a threshold current density of ˜5 kA cm-2 in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al0.06Ga0.94N:Mg despite the low growth temperature.

  5. High temperature fusion reactor design

    International Nuclear Information System (INIS)

    Harkness, S.D.; dePaz, J.F.; Gohar, M.Y.; Stevens, H.C.

    1979-01-01

    Fusion energy may have unique advantages over other systems as a source for high temperature process heat. A conceptual design of a blanket for a 7 m tokamak reactor has been developed that is capable of producing 1100 0 C process heat at a pressure of approximately 10 atmospheres. The design is based on the use of a falling bed of MgO spheres as the high temperature heat transfer system. By preheating the spheres with energy taken from the low temperature tritium breeding part of the blanket, 1086 MW of energy can be generated at 1100 0 C from a system that produces 3000 MW of total energy while sustaining a tritium breeding ratio of 1.07. The tritium breeding is accomplished using Li 2 O modules both in front of (6 cm thick) and behind (50 cm thick) the high temperature ducts. Steam is used as the first wall and front tritium breeding module coolant while helium is used in the rear tritium breeding region. The system produces 600 MW of net electricity for use on the grid

  6. Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

    Science.gov (United States)

    Meneghini, M.; Trivellin, N.; Berti, M.; Cesca, T.; Gasparotto, A.; Vinattieri, A.; Bogani, F.; Zhu, D.; Humphreys, C. J.; Meneghesso, G.; Zanoni, E.

    2013-03-01

    The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples.

  7. High Temperature, High Power Piezoelectric Composite Transducers

    Science.gov (United States)

    Lee, Hyeong Jae; Zhang, Shujun; Bar-Cohen, Yoseph; Sherrit, StewarT.

    2014-01-01

    Piezoelectric composites are a class of functional materials consisting of piezoelectric active materials and non-piezoelectric passive polymers, mechanically attached together to form different connectivities. These composites have several advantages compared to conventional piezoelectric ceramics and polymers, including improved electromechanical properties, mechanical flexibility and the ability to tailor properties by using several different connectivity patterns. These advantages have led to the improvement of overall transducer performance, such as transducer sensitivity and bandwidth, resulting in rapid implementation of piezoelectric composites in medical imaging ultrasounds and other acoustic transducers. Recently, new piezoelectric composite transducers have been developed with optimized composite components that have improved thermal stability and mechanical quality factors, making them promising candidates for high temperature, high power transducer applications, such as therapeutic ultrasound, high power ultrasonic wirebonding, high temperature non-destructive testing, and downhole energy harvesting. This paper will present recent developments of piezoelectric composite technology for high temperature and high power applications. The concerns and limitations of using piezoelectric composites will also be discussed, and the expected future research directions will be outlined. PMID:25111242

  8. High growth rate GaN on 200 mm silicon by metal-organic vapor phase epitaxy for high electron mobility transistors

    Science.gov (United States)

    Charles, M.; Baines, Y.; Bavard, A.; Bouveyron, R.

    2018-02-01

    It is increasingly important to reduce the cycle time of epitaxial growth, in order to reduce the costs of device fabrication, especially for GaN based structures which typically have growth cycles of several hours. We have performed a comprehensive study using metal-organic vapor phase epitaxy (MOVPE) investigating the effects of changing GaN growth rates from 0.9 to 14.5 μm/h. Although there is no significant effect on the strain incorporated in the layers, we have seen changes in the surface morphology which can be related to the change in dislocation behaviour and surface diffusion effects. At the small scale, as seen by AFM, increased dislocation density for higher growth rates leads to increased pinning of growth terraces, resulting in more closely spaced terraces. At a larger scale of hundreds of μm observed by optical profiling, we have related the formation of grains to the rate of surface diffusion of adatoms using a random walk model, implying diffusion distances from 30 μm for the highest growth rates up to 100 μm for the lowest. The increased growth rate also increases the intrinsic carbon incorporation which can increase the breakdown voltage of GaN films. Despite an increased threading dislocation density, these very high growth rates of 14.5 μm/hr by MOVPE have been shown to be appealing for reducing epitaxial growth cycle times and therefore costs in High Electron Mobility Transistor (HEMT) structures.

  9. Summary: High Temperature Downhole Motor

    Energy Technology Data Exchange (ETDEWEB)

    Raymond, David W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-10-01

    Directional drilling can be used to enable multi-lateral completions from a single well pad to improve well productivity and decrease environmental impact. Downhole rotation is typically developed with a motor in the Bottom Hole Assembly (BHA) that develops drilling power (speed and torque) necessary to drive rock reduction mechanisms (i.e., the bit) apart from the rotation developed by the surface rig. Historically, wellbore deviation has been introduced by a “bent-sub,” located in the BHA, that introduces a small angular deviation, typically less than 3 degrees, to allow the bit to drill off-axis with orientation of the BHA controlled at the surface. The development of a high temperature downhole motor would allow reliable use of bent subs for geothermal directional drilling. Sandia National Laboratories is pursuing the development of a high temperature motor that will operate on either drilling fluid (water-based mud) or compressed air to enable drilling high temperature, high strength, fractured rock. The project consists of designing a power section based upon geothermal drilling requirements; modeling and analysis of potential solutions; and design, development and testing of prototype hardware to validate the concept. Drilling costs contribute substantially to geothermal electricity production costs. The present development will result in more reliable access to deep, hot geothermal resources and allow preferential wellbore trajectories to be achieved. This will enable development of geothermal wells with multi-lateral completions resulting in improved geothermal resource recovery, decreased environmental impact and enhanced well construction economics.

  10. NSTX High Temperature Sensor Systems

    International Nuclear Information System (INIS)

    McCormack, B.; Kugel, H.W.; Goranson, P.; Kaita, R.

    1999-01-01

    The design of the more than 300 in-vessel sensor systems for the National Spherical Torus Experiment (NSTX) has encountered several challenging fusion reactor diagnostic issues involving high temperatures and space constraints. This has resulted in unique miniature, high temperature in-vessel sensor systems mounted in small spaces behind plasma facing armor tiles, and they are prototypical of possible high power reactor first-wall applications. In the Center Stack, Divertor, Passive Plate, and vessel wall regions, the small magnetic sensors, large magnetic sensors, flux loops, Rogowski Coils, thermocouples, and Langmuir Probes are qualified for 600 degrees C operation. This rating will accommodate both peak rear-face graphite tile temperatures during operations and the 350 degrees C bake-out conditions. Similar sensor systems including flux loops, on other vacuum vessel regions are qualified for 350 degrees C operation. Cabling from the sensors embedded in the graphite tiles follows narrow routes to exit the vessel. The detailed sensor design and installation methods of these diagnostic systems developed for high-powered ST operation are discussed

  11. Development of high temperature turbine

    Energy Technology Data Exchange (ETDEWEB)

    Takahara, Kitao; Nouse, Hiroyuki; Yoshida, Toyoaki; Minoda, Mitsuhiro; Matsusue, Katsutoshi; Yanagi, Ryoji

    1988-07-01

    For the contribution to the development of FJR710, high by-pass ratio turbofan engine, with the study for many years of the development of high efficiency turbine for the jet engine, the first technical prize from the Energy Resource Research Committee was awarded in April, 1988. This report introduced its technical contents. In order to improve the thermal efficiency and enlarge the output, it is very effective to raise the gas temperature at the inlet of gas turbine. For its purpose, by cooling the nozzle and moving blades and having those blades operate at lower temperature than that of the working limitation, they realized, for the first time in Japan, the technique of cooling turbine to heighten the operational gas temperature. By that technique, it was enabled to raise the gas temperature at the inlet of turbine, to 1,350/sup 0/C from 850/sup 0/C. This report explain many important points of study covering the basic test, visualizing flow experiment, material discussion and structural design in the process of development. (9 figs)

  12. High temperature structural sandwich panels

    Science.gov (United States)

    Papakonstantinou, Christos G.

    High strength composites are being used for making lightweight structural panels that are being employed in aerospace, naval and automotive structures. Recently, there is renewed interest in use of these panels. The major problem of most commercial available sandwich panels is the fire resistance. A recently developed inorganic matrix is investigated for use in cases where fire and high temperature resistance are necessary. The focus of this dissertation is the development of a fireproof composite structural system. Sandwich panels made with polysialate matrices have an excellent potential for use in applications where exposure to high temperatures or fire is a concern. Commercial available sandwich panels will soften and lose nearly all of their compressive strength temperatures lower than 400°C. This dissertation consists of the state of the art, the experimental investigation and the analytical modeling. The state of the art covers the performance of existing high temperature composites, sandwich panels and reinforced concrete beams strengthened with Fiber Reinforced Polymers (FRP). The experimental part consists of four major components: (i) Development of a fireproof syntactic foam with maximum specific strength, (ii) Development of a lightweight syntactic foam based on polystyrene spheres, (iii) Development of the composite system for the skins. The variables are the skin thickness, modulus of elasticity of skin and high temperature resistance, and (iv) Experimental evaluation of the flexural behavior of sandwich panels. Analytical modeling consists of a model for the flexural behavior of lightweight sandwich panels, and a model for deflection calculations of reinforced concrete beams strengthened with FRP subjected to fatigue loading. The experimental and analytical results show that sandwich panels made with polysialate matrices and ceramic spheres do not lose their load bearing capability during severe fire exposure, where temperatures reach several

  13. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    International Nuclear Information System (INIS)

    Tu, Nguyen Thanh; Hai, Pham Nam; Anh, Le Duc; Tanaka, Masaaki

    2016-01-01

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga_1_−_x,Fe_x)Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  14. High-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga,Fe)Sb

    Energy Technology Data Exchange (ETDEWEB)

    Tu, Nguyen Thanh [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physics, Ho Chi Minh City University of Pedagogy, 280, An Duong Vuong Street, District 5, Ho Chi Minh City 748242 (Viet Nam); Hai, Pham Nam [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 Ookayama, Meguro, Tokyo 152-0033 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan); Anh, Le Duc [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Tanaka, Masaaki [Department of Electrical Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656 (Japan); Center for Spintronics Research Network (CSRN), The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2016-05-09

    We show high-temperature ferromagnetism in heavily Fe-doped ferromagnetic semiconductor (Ga{sub 1−x},Fe{sub x})Sb (x = 23% and 25%) thin films grown by low-temperature molecular beam epitaxy. Magnetic circular dichroism spectroscopy and anomalous Hall effect measurements indicate intrinsic ferromagnetism of these samples. The Curie temperature reaches 300 K and 340 K for x = 23% and 25%, respectively, which are the highest values reported so far in intrinsic III-V ferromagnetic semiconductors.

  15. Ceramics for high temperature applications

    International Nuclear Information System (INIS)

    Mocellin, A.

    1977-01-01

    Problems related to materials, their fabrication, properties, handling, improvements are examined. Silicium nitride and silicium carbide are obtained by vacuum hot-pressing, reaction sintering and chemical vapour deposition. Micrographs are shown. Mechanical properties i.e. room and high temperature strength, creep resistance fracture mechanics and fatigue resistance. Recent developments of pressureless sintered Si C and the Si-Al-O-N quaternary system are mentioned

  16. High-temperature geothermal cableheads

    Science.gov (United States)

    Coquat, J. A.; Eifert, R. W.

    1981-11-01

    Two high temperature, corrosion resistant logging cable heads which use metal seals and a stable fluid to achieve proper electrical terminations and cable sonde interfacings are described. A tensile bar provides a calibrated yield point, and a cone assembly anchors the cable armor to the head. Electrical problems of the sort generally ascribable to the cable sonde interface were absent during demonstration hostile environment loggings in which these cable heads were used.

  17. Room temperature photoluminescence from In{sub x}Al{sub (1−x)}N films deposited by plasma-assisted molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kong, W., E-mail: wei.kong@duke.edu; Jiao, W. Y.; Kim, T. H.; Brown, A. S. [Department of Electrical and Computer Engineering, Duke University, Durham, North Carolina 27708 (United States); Mohanta, A. [Oak Ridge Institute for Science and Education, Research Participation Program, U.S. Army Aviation and Missile Research, Development and Engineering Center (AMRDEC), Redstone Arsenal, Alabama 35898 (United States); Roberts, A. T. [Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States); Fournelle, J. [Department of Geoscience, University of Wisconsin, Madison, Wisconsin 53706 (United States); Losurdo, M. [Plasma Chemistry Research Center-CNR, via Orabona, 4-70126 Bari (Italy); Everitt, H. O. [Charles Bowden Research Lab, Army Aviation and Missile RD and E Center, Redstone Arsenal, Alabama 35898 (United States); Department of Physics, Duke University, Durham, North Carolina 27708 (United States)

    2014-09-29

    InAlN films deposited by plasma-assisted molecular beam epitaxy exhibited a lateral composition modulation characterized by 10–12 nm diameter, honeycomb-shaped, columnar domains with Al-rich cores and In-rich boundaries. To ascertain the effect of this microstructure on its optical properties, room temperature absorption and photoluminescence characteristics of In{sub x}Al{sub (1−x)}N were comparatively investigated for indium compositions ranging from x = 0.092 to 0.235, including x = 0.166 lattice matched to GaN. The Stokes shift of the emission was significantly greater than reported for films grown by metalorganic chemical vapor deposition, possibly due to the phase separation in these nanocolumnar domains. The room temperature photoluminescence also provided evidence of carrier transfer from the InAlN film to the GaN template.

  18. A modular designed ultra-high-vacuum spin-polarized scanning tunneling microscope with controllable magnetic fields for investigating epitaxial thin films.

    Science.gov (United States)

    Wang, Kangkang; Lin, Wenzhi; Chinchore, Abhijit V; Liu, Yinghao; Smith, Arthur R

    2011-05-01

    A room-temperature ultra-high-vacuum scanning tunneling microscope for in situ scanning freshly grown epitaxial films has been developed. The core unit of the microscope, which consists of critical components including scanner and approach motors, is modular designed. This enables easy adaptation of the same microscope units to new growth systems with different sample-transfer geometries. Furthermore the core unit is designed to be fully compatible with cryogenic temperatures and high magnetic field operations. A double-stage spring suspension system with eddy current damping has been implemented to achieve ≤5 pm z stability in a noisy environment and in the presence of an interconnected growth chamber. Both tips and samples can be quickly exchanged in situ; also a tunable external magnetic field can be introduced using a transferable permanent magnet shuttle. This allows spin-polarized tunneling with magnetically coated tips. The performance of this microscope is demonstrated by atomic-resolution imaging of surface reconstructions on wide band-gap GaN surfaces and spin-resolved experiments on antiferromagnetic Mn(3)N(2)(010) surfaces.

  19. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Elleuch, Omar, E-mail: mr.omar.elleuch@gmail.com; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi [Toyota Technological Institute, 2-12-1 Hisakata, Tempaku, Nagoya 468-8511 (Japan)

    2015-01-28

    The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor.

  20. Hole traps associated with high-concentration residual carriers in p-type GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Elleuch, Omar; Wang, Li; Lee, Kan-Hua; Demizu, Koshiro; Ikeda, Kazuma; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2015-01-01

    The hole traps associated with high background doping in p-type GaAsN grown by chemical beam epitaxy are studied based on the changes of carrier concentration, junction capacitance, and hole traps properties due to the annealing. The carrier concentration was increased dramatically with annealing time, based on capacitance–voltage (C–V) measurement. In addition, the temperature dependence of the junction capacitance (C–T) was increased rapidly two times. Such behavior is explained by the thermal ionization of two acceptor states. These acceptors are the main cause of high background doping in the film, since the estimated carrier concentration from C–T results explains the measured carrier concentration at room temperature using C–V method. The acceptor states became shallower after annealing, and hence their structures are thermally unstable. Deep level transient spectroscopy (DLTS) showed that the HC2 hole trap was composed of two signals, labeled HC21 and HC22. These defects correspond to the acceptor levels, as their energy levels obtained from DLTS are similar to those deduced from C–T. The capture cross sections of HC21 and HC22 are larger than those of single acceptors. In addition, their energy levels and capture cross sections change in the same way due to the annealing. This tendency suggests that HC21 and HC22 signals originate from the same defect which acts as a double acceptor

  1. Growth of Highly Epitaxial YBa2Cu3O7-δ Films from a Simple Propionate-Based Solution

    DEFF Research Database (Denmark)

    Yue, Zhao; Torres, Pol; Tang, Xiao

    2015-01-01

    Intensive investigations have been conducted to develop epitaxial oxide thin films with superior electromagnetic performance by low-cost chemical solution deposition routes. In this paper, a novel propionate-based precursor solution without involving any other additive was proposed and employed...... to grow superconducting YBa2Cu3O7-δ (YBCO) films on LaAlO3 (LAO) single crystals. The precursor solutions are stable with a long shelf life of up to several months. Since the primary compositions are propionates after evaporating the solvent, the toxic reagents and evolved gases during solution synthesis...... and heat treatment can be eliminated completely. In this process, rapid pyrolysis and high conversation rate can also be achieved during growth of YBCO films in comparison with the conventional trifluoroacetate metal organic deposition routes. Remarkably, a 210 nm YBCO film exhibits high superconducting...

  2. Perpendicular magnetic anisotropy of non-epitaxial hexagonal Co{sub 50}Pt{sub 50} thin films prepared at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, F.T., E-mail: ftyuan@gmail.com [iSentek Ltd., Advanced Sensor Laboratory, New Taipei City 22101, Taiwan (China); Chang, H.W., E-mail: wei0208@gmail.com [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Lee, P.Y.; Chang, C.Y. [Department of Applied Physics, Tunghai University, Taichung 40704, Taiwan (China); Chi, C.C. [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Ouyang, H., E-mail: houyang@mx.nthu.edu.tw [Department of Materials Sciences and Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan (China)

    2015-04-15

    Highlights: • In this paper, we propose a non-epitaxially grown PMA thin film of disorder hexagonal Co{sub 50}Pt{sub 50} which can satisfy all the requirements at once. • Although the preparation temperature is at room temperature and no post annealing is required, the film also shows good thermal stability up to 400 °C. • Moreover, the easy-controlling single layer deposition process of the film largely enhances the feasibility of practical production. • Significant PMA is achieved in a wide range of film thickness from 2 nm to 20 nm, which expands the usage form a GMR or TMR magnetic junctions to perpendicular spin polarizer for spin current related engineering. • The presented results may open new opportunities for advanced spintronic devices. - Abstract: Non-epitaxially induced perpendicular magnetic anisotropy (PMA) of Co{sub 50}Pt{sub 50} thin films at room temperature (RT) is reported. The CoPt film having a disordered hcp structure shows a magnetocrystalline anisotropy (K{sub u}{sup RT}) of 1–2 × 10{sup 6} erg/cm{sup 3} in a wide range of layer thickness from 2 to 20 nm. K{sub u}{sup RT} of about 1 × 10{sup 6} erg/cm{sup 3} can be preserved after a 400 °C-thermal cycle in the 5-nm-thick sample. Moderate PMA, large thickness range, simple preparation process, low formation temperature but good thermal stability make presented hcp CoPt become a remarkable option for advanced spintronic devices.

  3. Low temperature photoluminescence and photoacoustic characterization of Zn-doped InxGa1-xAsySb1-y epitaxial layers for photovoltaic applications

    International Nuclear Information System (INIS)

    Gomez-Herrera, M.L.; Herrera-Perez, J.L.; Rodriguez-Fragoso, P.; Riech, I.; Mendoza-Alvarez, J.G.

    2008-01-01

    In this paper we present results on the characterization of Zn-doped InGaAsSb epitaxial layers to be used in the development of stacked solar cells. Using the liquid phase epitaxy technique we have grown p-type InGaAsSb layers, using Zn as the dopant, and n-type Te-doped GaSb wafers as substrates. A series of Zn-doped InGaAsSb samples were prepared by changing the amount of Zn in the melt in the range: 0.1-0.9 mg to obtain different p-type doping levels, and consequently, different p-n region characteristics. Low temperature photoluminescence spectra (PL) were measured at 15 K using at various excitation powers in the range 80-160 mW. PL spectra show the presence of an exciton-related band emission around 0.642 eV and a band at 0.633 eV which we have related to radiative emission involving Zn-acceptors. Using the photoacoustic technique we measured the interface recombination velocities related to the interface crystalline quality, showing that the layer-substrate interface quality degrades as the Zn concentration in the layers increases

  4. High temperature PEM fuel cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Jianlu; Xie, Zhong; Zhang, Jiujun; Tang, Yanghua; Song, Chaojie; Navessin, Titichai; Shi, Zhiqing; Song, Datong; Wang, Haijiang; Wilkinson, David P.; Liu, Zhong-Sheng; Holdcroft, Steven [Institute for Fuel Cell Innovation, National Research Council Canada, Vancouver, BC (Canada V6T 1W5)

    2006-10-06

    There are several compelling technological and commercial reasons for operating H{sub 2}/air PEM fuel cells at temperatures above 100{sup o}C. Rates of electrochemical kinetics are enhanced, water management and cooling is simplified, useful waste heat can be recovered, and lower quality reformed hydrogen may be used as the fuel. This review paper provides a concise review of high temperature PEM fuel cells (HT-PEMFCs) from the perspective of HT-specific materials, designs, and testing/diagnostics. The review describes the motivation for HT-PEMFC development, the technology gaps, and recent advances. HT-membrane development accounts for {approx}90% of the published research in the field of HT-PEMFCs. Despite this, the status of membrane development for high temperature/low humidity operation is less than satisfactory. A weakness in the development of HT-PEMFC technology is the deficiency in HT-specific fuel cell architectures, test station designs, and testing protocols, and an understanding of the underlying fundamental principles behind these areas. The development of HT-specific PEMFC designs is of key importance that may help mitigate issues of membrane dehydration and MEA degradation. (author)

  5. Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

    Science.gov (United States)

    Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

    2015-12-01

    P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

  6. Molecular beam epitaxial growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Ruppert, P.; Hommel, D.; Behr, T.; Heinke, H.; Waag, A.; Landwehr, G. (Physikalisches Inst., Univ. Wuerzburg (Germany))

    1994-04-14

    The properties of molecular beam epitaxial growth of ZnSe epilayers deposited directly on a GaAs substrate are compared to those grown on a GaAs buffer layer. The superior quality of the latter is confirmed by RHEED, TEM and X-ray diffraction. Based on RHEED oscillation studies, a model explaining the dependence of the ZnSe growth rate on Zn and Se fluxes and the substrate temperature is developed taking into account physisorbed and chemisorbed states. For partially relaxed epilayers, the correlation between the relaxation state and the crystalline mosaicity, as found by high resolution X-ray diffraction, is discussed

  7. Capacitance–voltage and current–voltage characteristics for the study of high background doping and conduction mechanisms in GaAsN grown by chemical beam epitaxy

    International Nuclear Information System (INIS)

    Bouzazi, Boussairi; Kojima, Nobuaki; Ohshita, Yoshio; Yamaguchi, Masafumi

    2013-01-01

    Highlights: ► The cause of high background doping was confirmed and characterized. ► The current–voltage characteristics deviate from the thermionic emission. ► The recombination current is attributed to a hole trap (E V + 0.52 eV). ► The hole trap (E V + 0.52 eV) was confirmed by DLTS measurements. -- Abstract: The temperature dependence of capacitance–voltage (C–V) and current voltage (I–V) characteristics were used to study the cause of high background doping and the underlying current transport mechanisms in GaAsN Schottky diode grown by chemical beam epitaxy (CBE). In one hand, a nitrogen-related sigmoid increase of junction capacitance and ionized acceptor concentration was observed in the temperature range 70–100 K and was attributed to the thermal ionization of a nitrogen–hydrogen-related deep acceptor-state, with thermal activation energy of approximately 0.11 eV above the valence band maximum (VBM) of GaAsN. This acceptor state is mainly responsible for the high background doping in unintentionally doped GaAsN grown by CBE. On the other hand, the I–V characteristics at different temperatures were found to deviate from the well known pure thermionic-emission mechanism. Based on their fitting at each temperature, the recombination current in the space charge region of GaAsN Schottky diode was mainly attributed to a hole trap, localized at 0.51 eV above the VBM. Given the accuracy of measurements, this result was confirmed by deep level transient spectroscopy measurements. Nevertheless, considering the Shockley–Read–Hall model of generation-recombination, the recombination activity of this defect was quantified and qualified to be weak compared with the markedly degradation of minority carrier lifetime in GaAsN material

  8. Temperature uniformity mapping in a high pressure high temperature reactor using a temperature sensitive indicator

    NARCIS (Netherlands)

    Grauwet, T.; Plancken, van der I.; Vervoort, L.; Matser, A.M.; Hendrickx, M.; Loey, van A.

    2011-01-01

    Recently, the first prototype ovomucoid-based pressure–temperature–time indicator (pTTI) for high pressure high temperature (HPHT) processing was described. However, for temperature uniformity mapping of high pressure (HP) vessels under HPHT sterilization conditions, this prototype needs to be

  9. Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

    International Nuclear Information System (INIS)

    Fernandez, J.R.L.; Chitta, V.A.; Abramof, E.

    2000-01-01

    Carrier concentration and mobility were measured for intrinsic cubic InN and GaN, and for Si-doped cubic GaN as a function of temperature. Metallic n-type conductivity was found for the InN, while background p-type conductivity was observed for the intrinsic GaN layer. Doping the cubic GaN with Si two regimes were observed. For low Si-doping concentrations, the samples remain p-type. Increasing the Si-doping level, the background acceptors are compensated and the samples became highly degenerated n-type. From the carrier concentration dependence on temperature, the activation energy of the donor and acceptor levels was determined. Attempts were made to determine the scattering mechanisms responsible for the behavior of the mobility as a function of temperature

  10. High resolution x-ray scattering studies of strain in epitaxial thin films of yttrium silicide grown on silicon (111)

    International Nuclear Information System (INIS)

    Marthinez-Miranda, L.J.; Santiago-Aviles, J.J.; Siegal, M.P.; Graham, W.R.; Heiney, P.A.

    1990-01-01

    The authors have used high resolution grazing incidence x-ray scattering (GIXS) to study the in- plane and out-of-plane structure of epitaxial YSi 2-x films grown on Si(111), with thicknesses ranging from 85 Angstrom to 510 Angstrom. Their results indicate that the films are strained, and that film strain increases as a function of thickness, with lattice parameters varying from a = 3.846 Angstrom/c = 4.142 Angstrom for the 85 Angstrom film to a = 3.877 Angstrom/c = 4.121 Angstrom for the 510 Angstrom film. The authors correlate these results with an increase in pinhole areal coverage as a function of thickness. In addition, the authors' measurements show no evidence for the existence of ordered silicon vacancies in the films

  11. Passivation of high temperature superconductors

    Science.gov (United States)

    Vasquez, Richard P. (Inventor)

    1991-01-01

    The surface of high temperature superconductors such as YBa2Cu3O(7-x) are passivated by reacting the native Y, Ba and Cu metal ions with an anion such as sulfate or oxalate to form a surface film that is impervious to water and has a solubility in water of no more than 10(exp -3) M. The passivating treatment is preferably conducted by immersing the surface in dilute aqueous acid solution since more soluble species dissolve into the solution. The treatment does not degrade the superconducting properties of the bulk material.

  12. CONFINEMENT OF HIGH TEMPERATURE PLASMA

    Science.gov (United States)

    Koenig, H.R.

    1963-05-01

    The confinement of a high temperature plasma in a stellarator in which the magnetic confinement has tended to shift the plasma from the center of the curved, U-shaped end loops is described. Magnetic means are provided for counteracting this tendency of the plasma to be shifted away from the center of the end loops, and in one embodiment this magnetic means is a longitudinally extending magnetic field such as is provided by two sets of parallel conductors bent to follow the U-shaped curvature of the end loops and energized oppositely on the inside and outside of this curvature. (AEC)

  13. High temperature superconductors and method

    International Nuclear Information System (INIS)

    Ruvalds, J.J.

    1977-01-01

    This invention comprises a superconductive compound having the formula: Ni/sub 1-x/M/sub x/Z/sub y/ wherein M is a metal which will destroy the magnetic character of nickel (preferably copper, silver or gold); Z is hydrogen or deuterium; x is 0.1 to 0.9; and y, correspondingly, 0.9 to 0.1, and method of conducting electric current with no resistance at relatively high temperature of T>1 0 K comprising a conductor consisting essentially of the superconducting compound noted above

  14. Synchrotron radiation excited silicon epitaxy using disilane

    International Nuclear Information System (INIS)

    Akazawa, Housei; Utsumi, Yuichi

    1995-01-01

    Synchrotron radiation (SR) excited chemical reactions provide new crystal growth methods suitable for low-temperature Si epitaxy. The growth kinetics and film properties were investigated by atomic layer epitaxy (ALE) and photochemical vapor deposition (CVD) modes using Si 2 H 6 . SR-ALE, isolating the surface growth channel mediated by photon stimulated hydrogen desorption, achieves digital growth independent of gas exposure time, SR irradiation time, and substrate temperature. On the other hand in SR-CVD, photolysis of Si 2 H 6 is predominant. In the nonirradiated region, Eley-Rideal type reaction between the photofragments and the surface deposit Si adatoms in a layer-by-layer fashion. In the irradiated region, however, multi-layer photolysis and rebounding occurs within the condensed Si 2 H 6 layer. The pertinent elementary processes were identified by using the high-resolution time-of-flight mass spectroscopy. The SR-CVD can grow a uniform and epitaxial Si film down to 200degC. The surface morphology is controlled by the surfactant effect of hydrogen atoms. (author)

  15. Modern high-temperature superconductivity

    International Nuclear Information System (INIS)

    Ching Wu Chu

    1988-01-01

    Ever since the discovery of superconductivity in 1911, its unusual scientific challenge and great technological potential have been recognized. For the past three-quarters of a century, superconductivity has done well on the science front. This is because sueprconductivity is interesting not only just in its own right but also in its ability to act as a probe to many exciting nonsuperconducting phenomena. For instance, it has continued to provide bases for vigorous activities in condensed matter science. Among the more recent examples are heavy-fermion systems and organic superconductors. During this same period of time, superconductivity has also performed admirably in the applied area. Many ideas have been conceived and tested, making use of the unique characteristics of superconductivity - zero resistivity, quantum interference phenomena, and the Meissner effect. In fact, it was not until late January 1987 that it became possible to achieve superconductivity with the mere use of liquid nitrogen - which is plentiful, cheap, efficient, and easy to handle - following the discovery of supercondictivity above 90 K in Y-Ba-Cu-O, the first genuine quaternary superconductor. Superconductivity above 90 K poses scientific and technological challenges not previously encountered: no existing theories can adequately describe superconductivity above 40 K and no known techniques can economically process the materials for full-scale applications. In this paper, therefore, the author recalls a few events leading to the discovery of the new class of quaternary compounds with a superconducting transition temperature T c in the 90 K range, describes the current experimental status of high-temperature superconductivity and, finally, discusses the prospect of very-high-temperature superconductivity, i.e., with a T c substantially higher than 100 K. 97 refs., 7 figs

  16. Studies of high temperature superconductors

    International Nuclear Information System (INIS)

    Narlikar, A.

    1989-01-01

    The high temperature superconductors (HTSCs) discovered are from the family of ceramic oxides. Their large scale utilization in electrical utilities and in microelectronic devices are the frontal challenges which can perhaps be effectively met only through consolidated efforts and expertise of a multidisciplinary nature. During the last two years the growth of the new field has occurred on an international scale and perhaps has been more rapid than in most other fields. There has been an extraordinary rush of data and results which are continually being published as short texts dispersed in many excellent journals, some of which were started to ensure rapid publication exclusively in this field. As a result, the literature on HTSCs has indeed become so massive and so diffuse that it is becoming increasingly difficult to keep abreast with the important and reliable facets of this fast-growing field. This provided the motivation to evolve a process whereby both professional investigators and students can have ready access to up-to- date in-depth accounts of major technical advances happening in this field. The present series Studies of High Temperature Superconductors has been launched to, at least in part, fulfill this need

  17. High temperature superconductor current leads

    International Nuclear Information System (INIS)

    Zeimetz, B.; Liu, H.K.; Dou, S.X.

    1996-01-01

    Full text: The use of superconductors in high electrical current applications (magnets, transformers, generators etc.) usually requires cooling with liquid Helium, which is very expensive. The superconductor itself produces no heat, and the design of Helium dewars is very advanced. Therefore most of the heat loss, i.e. Helium consumption, comes from the current lead which connects the superconductor with its power source at room temperature. The current lead usually consists of a pair of thick copper wires. The discovery of the High Temperature Superconductors makes it possible to replace a part of the copper with superconducting material. This drastically reduces the heat losses because a) the superconductor generates no resistive heat and b) it is a very poor thermal conductor compared with the copper. In this work silver-sheathed superconducting tapes are used as current lead components. The work comprises both the production of the tapes and the overall design of the leads, in order to a) maximize the current capacity ('critical current') of the superconductor, b) minimize the thermal conductivity of the silver clad, and c) optimize the cooling conditions

  18. Container floor at high temperatures

    International Nuclear Information System (INIS)

    Reutler, H.; Klapperich, H.J.; Mueller-Frank, U.

    1978-01-01

    The invention describes a floor for container which is stressed at high, changing temperatures and is intended for use in gas-cooled nuclear reactors. Due to the downward cooling gas flow in these types of reactor, the reactor floor is subjected to considerable dimensional changes during switching on and off. In the heating stage, the whole graphite structure of the reactor core and floor expands. In order to avoid arising constraining forces, sufficiently large expansion spaces must be allowed for furthermore restoring forces must be present to close the gaps again in the cooling phase. These restoring forces must be permanently present to prevent loosening of the core cuits amongst one another and thus uncontrollable relative movement. Spring elements are not suitable due to fast fatigue as a result of high temperatures and radiation exposure. It is suggested to have the floor elements supported on rollers whose rolling planes are downwards inclined to a fixed point for support. The construction is described in detail by means of drawings. (GL) [de

  19. High Temperature Radio Frequency Loads

    CERN Document Server

    Federmann, S; Grudiev, A; Montesinos, E; Syratchev, I

    2011-01-01

    In the context of energy saving and recovery requirements the design of reliable and robust RF power loads which permit a high outlet temperature and high pressure of the cooling water is desirable. Cooling water arriving at the outlet withmore than 150 ◦C and high pressure has a higher value than water with 50 ◦C under low pressure. Conventional RF power loads containing dielectric and magnetic materials as well as sensitive ceramic windows usually do not permit going much higher than 90 ◦C. Here we present and discuss several design concepts for "metal only" RF high power loads. One concept is the application of magnetic steel corrugated waveguides near cutoff – this concept could find practical use above several GHz. Another solution are resonant structures made of steel to be installed in large waveguides for frequencies of 500 MHz or lower. Similar resonant structures above 100 MHz taking advantage of the rather high losses of normal steel may also be used in coaxial line geometries with large di...

  20. Epitaxial La2/3Sr1/3MnO3 thin films with unconventional magnetic and electric properties near the Curie temperature

    International Nuclear Information System (INIS)

    Signorini, L.; Riva, M.; Cantoni, M.; Bertacco, R.; Ciccacci, F.

    2006-01-01

    We used Pulsed Laser Deposition (PLD) in oxidizing environment to epitaxially grow optimally doped manganite La 2/3 Sr 1/3 MnO 3 (LSMO) thin films over a (001) oriented SrTiO 3 substrate. Synthesized samples show good room temperature magnetic properties accompanied by a peculiar extension of the metallic conduction regime to temperatures higher than the Curie point. In this paper we present a study of the dependence of transport and magnetic properties of LSMO thin films on the oxygen pressure during PLD growth. We show how interaction of the growing films with O 2 molecules is fundamental for a correct synthesis and in which way it is possible to adjust PLD experimental parameters in order to tune LSMO thin film properties. The persistence of the metallic conduction regime above the Curie temperature indicates some minor changes of the electronic structure near the Fermi level, which is responsible for the half-metallic behavior of LSMO at low temperature. This feature is rather intriguing from the technological point of view, as it could pave the way to the increase of operating temperature of devices based on LSMO

  1. Ion beam induced epitaxy in Ge- and B- coimplanted silicon

    International Nuclear Information System (INIS)

    Hayashi, N.; Hasegawa, M.; Tanoue, H.; Takahashi, H.; Shimoyama, K.; Kuriyama, K.

    1992-01-01

    The epitaxial regrowth of amorphous surface layers in and Si substrate has been studied under irradiation with 400 keV Ar + ions at the temperature range from 300 to 435degC. The amorphous layers were obtained by Ge + implantation, followed by B + implantation. The ion beam assisted epitaxy was found to be sensitive to both the substrate orientation and the implanted Ge concentration, and the layer-by-layer epitaxial regrowth seemed to be precluded in Si layers with high doses of Ge implants, e.g., 2.5 x 10 15 ions/cm 2 . Electrical activation of implanted dopant B was also measured in the recrystallized Si layer. (author)

  2. High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.

    Science.gov (United States)

    Renard, Charles; Molière, Timothée; Cherkashin, Nikolay; Alvarez, José; Vincent, Laetitia; Jaffré, Alexandre; Hallais, Géraldine; Connolly, James Patrick; Mencaraglia, Denis; Bouchier, Daniel

    2016-05-04

    Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.

  3. Low temperature p-type doping of (Al)GaN layers using ammonia molecular beam epitaxy for InGaN laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Malinverni, M., E-mail: marco.malinverni@epfl.ch; Lamy, J.-M.; Martin, D.; Grandjean, N. [ICMP, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland); Feltin, E.; Dorsaz, J. [NOVAGAN AG, CH-1015 Lausanne (Switzerland); Castiglia, A.; Rossetti, M.; Duelk, M.; Vélez, C. [EXALOS AG, CH-8952 Schlieren (Switzerland)

    2014-12-15

    We demonstrate state-of-the-art p-type (Al)GaN layers deposited at low temperature (740 °C) by ammonia molecular beam epitaxy (NH{sub 3}-MBE) to be used as top cladding of laser diodes (LDs) with the aim of further reducing the thermal budget on the InGaN quantum well active region. Typical p-type GaN resistivities and contact resistances are 0.4 Ω cm and 5 × 10{sup −4} Ω cm{sup 2}, respectively. As a test bed, we fabricated a hybrid laser structure emitting at 400 nm combining n-type AlGaN cladding and InGaN active region grown by metal-organic vapor phase epitaxy, with the p-doped waveguide and cladding layers grown by NH{sub 3}-MBE. Single-mode ridge-waveguide LD exhibits a threshold voltage as low as 4.3 V for an 800 × 2 μm{sup 2} ridge dimension and a threshold current density of ∼5 kA cm{sup −2} in continuous wave operation. The series resistance of the device is 6 Ω and the resistivity is 1.5 Ω cm, confirming thereby the excellent electrical properties of p-type Al{sub 0.06}Ga{sub 0.94}N:Mg despite the low growth temperature.

  4. High concentration agglomerate dynamics at high temperatures.

    Science.gov (United States)

    Heine, M C; Pratsinis, S E

    2006-11-21

    The dynamics of agglomerate aerosols are investigated at high solids concentrations that are typical in industrial scale manufacture of fine particles (precursor mole fraction larger than 10 mol %). In particular, formation and growth of fumed silica at such concentrations by chemical reaction, coagulation, and sintering is simulated at nonisothermal conditions and compared to limited experimental data and commercial product specifications. Using recent chemical kinetics for silica formation by SiCl4 hydrolysis and neglecting aerosol polydispersity, the evolution of the diameter of primary particles (specific surface area, SSA), hard- and soft-agglomerates, along with agglomerate effective volume fraction (volume occupied by agglomerate) is investigated. Classic Smoluchowski theory is fundamentally limited for description of soft-agglomerate Brownian coagulation at high solids concentrations. In fact, these high concentrations affect little the primary particle diameter (or SSA) but dominate the soft-agglomerate diameter, structure, and volume fraction, leading to gelation consistent with experimental data. This indicates that restructuring and fragmentation should affect product particle characteristics during high-temperature synthesis of nanostructured particles at high concentrations in aerosol flow reactors.

  5. In situ observation of low temperature growth of Ge on Si(1 1 1) by reflection high energy electron diffraction

    International Nuclear Information System (INIS)

    Grimm, Andreas; Fissel, Andreas; Bugiel, Eberhard; Wietler, Tobias F.

    2016-01-01

    Highlights: • Investigation of the initial stages of epitaxial growth of Ge on Si(1 1 1) in situ by RHEED. • Impact of growth temperature on strain evolution for temperatures between 200 °C and 400 °C. • Epitaxy with a high degree of structural perfection already at growth temperature of 200 °C. • Ordered interfacial dislocation networks already at 200 °C. • Tensile strain contribution of Si(1 1 1) 7 × 7-surface reconstruction to strain relaxation process for epitaxial growth of Ge. - Abstract: In this paper we investigate the initial stages of epitaxial growth of Ge on Si(1 1 1) and the impact of growth temperature on strain evolution in situ by reflection high energy electron diffraction (RHEED) for temperatures between 200 °C and 400 °C. The change in surface morphology from a flat wetting layer to subsequent islanding that is characteristic for Stranski–Krastanov growth is monitored by spot intensity analysis. The corresponding critical layer thickness is determined to 3.1 < d c < 3.4 ML. In situ monitoring of the strain relaxation process reveals a contribution of the Si(1 1 1) 7 × 7-surface reconstruction to the strain relaxation process. High resolution transmission electron microscopy confirms that the Ge islands exhibit a high degree of structural perfection and an ordered interfacial misfit dislocation network already at a growth temperature of 200 °C is established. The temperature dependency of island shape, density and height is characterized by atomic force microscopy and compared to the RHEED investigations.

  6. High Temperature Superconductor Accelerator Magnets

    CERN Document Server

    AUTHOR|(CDS)2079328; de Rijk, Gijs; Dhalle, Marc

    2016-11-10

    For future particle accelerators bending dipoles are considered with magnetic fields exceeding $20T$. This can only be achieved using high temperature superconductors (HTS). These exhibit different properties from classical low temperature superconductors and still require significant research and development before they can be applied in a practical accelerator magnet. In order to study HTS in detail, a five tesla demonstrator magnet named Feather-M2 is designed and constructed. The magnet is based on ReBCO coated conductor, which is assembled into a $10kA$ class Roebel cable. A new and optimized Aligned Block layout is used, which takes advantage of the anisotropy of the conductor. This is achieved by providing local alignment of the Roebel cable in the coil windings with the magnetic field lines. A new Network Model capable of analyzing transient electro-magnetic and thermal phenomena in coated conductor cables and coils is developed. This model is necessary to solve critical issues in coated conductor ac...

  7. The high-temperature reactor

    International Nuclear Information System (INIS)

    Kirchner, U.

    1991-01-01

    The book deals with the development of the German high-temperature reactor (pebble-bed), the design of a prototype plant and its (at least provisional) shut-down in 1989. While there is a lot of material on the HTR's competitor, the fast breeder, literature is very incomplete on HTRs. The author describes HTR's history as a development which was characterised by structural divergencies but not effectively steered and monitored. There was no project-oriented 'community' such as there was for the fast breeder. Also, the new technology was difficult to control there were situations where no one quite knew what was going on. The technical conditions however were not taken as facts but as a basis for interpretation, wishes and reservations. The HTR gives an opportunity to consider the conditions under which large technical projects can be carried out today. (orig.) [de

  8. High temperature industrial heat pumps

    Energy Technology Data Exchange (ETDEWEB)

    Berghmans, J. (Louvain Univ., Heverlee (Belgium). Inst. Mechanica)

    1990-01-01

    The present report intends to describe the state of the art of high temperature industrial heat pumps. A description is given of present systems on the market. In addition the research and development efforts on this subject are described. Compression (open as well as closed cycle) systems, as well as absorption heat pumps (including transformers), are considered. This state of the art description is based upon literature studies performed by a team of researchers from the Katholieke Universiteit Leuven, Belgium. The research team also analysed the economics of heat pumps of different types under the present economic conditions. The heat pumps are compared with conventional heating systems. This analysis was performed in order to evaluate the present condition of the heat pump in the European industry.

  9. Faraday imaging at high temperatures

    Science.gov (United States)

    Hackel, Lloyd A.; Reichert, Patrick

    1997-01-01

    A Faraday filter rejects background light from self-luminous thermal objects, but transmits laser light at the passband wavelength, thus providing an ultra-narrow optical bandpass filter. The filter preserves images so a camera looking through a Faraday filter at a hot target illuminated by a laser will not see the thermal radiation but will see the laser radiation. Faraday filters are useful for monitoring or inspecting the uranium separator chamber in an atomic vapor laser isotope separation process. Other uses include viewing welds, furnaces, plasma jets, combustion chambers, and other high temperature objects. These filters are can be produced at many discrete wavelengths. A Faraday filter consists of a pair of crossed polarizers on either side of a heated vapor cell mounted inside a solenoid.

  10. Faraday imaging at high temperatures

    International Nuclear Information System (INIS)

    Hackel, L.A.; Reichert, P.

    1997-01-01

    A Faraday filter rejects background light from self-luminous thermal objects, but transmits laser light at the passband wavelength, thus providing an ultra-narrow optical bandpass filter. The filter preserves images so a camera looking through a Faraday filter at a hot target illuminated by a laser will not see the thermal radiation but will see the laser radiation. Faraday filters are useful for monitoring or inspecting the uranium separator chamber in an atomic vapor laser isotope separation process. Other uses include viewing welds, furnaces, plasma jets, combustion chambers, and other high temperature objects. These filters are can be produced at many discrete wavelengths. A Faraday filter consists of a pair of crossed polarizers on either side of a heated vapor cell mounted inside a solenoid. 3 figs

  11. High temperature incineration. Densification of granules from high temperature incineration

    International Nuclear Information System (INIS)

    Voorde, N. van de; Claes, J.; Taeymans, A.; Hennart, D.; Gijbels, J.; Balleux, W.; Geenen, G.; Vangeel, J.

    1982-01-01

    The incineration system of radioactive waste discussed in this report, is an ''integral'' system, which directly transforms a definite mixture of burnable and unburnable radioactive waste in a final product with a sufficient insolubility to be safely disposed of. At the same time, a significant volume reduction occurs by this treatment. The essential part of the system is a high temperature incinerator. The construction of this oven started in 1974, and while different tests with simulated inactive or very low-level active waste were carried out, the whole system was progressively and continuously extended and adapted, ending finally in an installation with completely remote control, enclosed in an alpha-tight room. In this report, a whole description of the plant and of its auxiliary installations will be given; then the already gained experimental results will be summarized. Finally, the planning for industrial operation will be briefly outlined. An extended test with radioactive waste, which was carried out in March 1981, will be discussed in the appendix

  12. Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

    Science.gov (United States)

    Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

    2018-04-01

    In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

  13. Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

    Energy Technology Data Exchange (ETDEWEB)

    Venter, A., E-mail: andre.venter@nmmu.ac.za [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Murape, D.M.; Botha, J.R. [Department of Physics, Nelson Mandela Metropolitan University, P.O. Box 77000, Port Elizabeth 6031 (South Africa); Auret, F.D. [Department of Physics, University of the Pretoria, Lynnwood Road, Pretoria 0002 (South Africa)

    2015-01-01

    The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ{sub b} vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ{sub b,mean} assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact.

  14. Transport characteristics of Pd Schottky barrier diodes on epitaxial n-GaSb as determined from temperature dependent current–voltage measurements

    International Nuclear Information System (INIS)

    Venter, A.; Murape, D.M.; Botha, J.R.; Auret, F.D.

    2015-01-01

    The temperature dependent transport characteristics of Pd/n-GaSb:Te Schottky contacts with low and saturating reverse current are investigated by means of current–voltage measurements between 80 K and 320 K. The apparent barrier height and ideality factor increase with a decrease in temperature. Neither thermionic nor thermionic field emission can explain the low temperature characteristics of these diodes. Instead, evidence is presented for barrier inhomogeneity across the metal/semiconductor contact. A plot of the barrier height, ϕ b vs. 1/2kT revealed a double Gaussian distribution for the barrier height with ϕ b,mean assuming values of 0.59 eV ± 0.07 (80–140 K) and 0.25 eV ± 0.12 (140–320 K) respectively. - Highlights: • Transport characteristics of Pd/epitaxial n-GaSb:Te SBDs are studied by means of I-V-T measurements. • SBDs have remarkably low and saturating reverse current – of the lowest ever reported for GaSb. • Transport behaviour is explained by considering electronic states present on the GaSb surface. • Evidence is presented for barrier inhomogeneity across the metal-semiconductor contact

  15. Deep levels in a-plane, high Mg-content MgxZn1−xO epitaxial layers grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Gür, Emre; Tabares, G.; Hierro, A.; Arehart, A.; Ringel, S. A.; Chauveau, J. M.

    2012-01-01

    Deep level defects in n-type unintentionally doped a-plane Mg x Zn 1−x O, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of Mg x Zn 1−x O were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of E c − 1.4 eV, 2.1 eV, 2.6 V, and E v + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at E c − 2.1 eV, E v + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at E v + 0.3 eV and E c − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the E v + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the E c − 1.4 eV and E c − 2.6 eV levels in Mg alloyed samples.

  16. Lattice-Symmetry-Driven Epitaxy of Hierarchical GaN Nanotripods

    KAUST Repository

    Wang, Ping

    2017-01-18

    Lattice-symmetry-driven epitaxy of hierarchical GaN nanotripods is demonstrated. The nanotripods emerge on the top of hexagonal GaN nanowires, which are selectively grown on pillar-patterned GaN templates using molecular beam epitaxy. High-resolution transmission electron microscopy confirms that two kinds of lattice-symmetry, wurtzite (wz) and zinc-blende (zb), coexist in the GaN nanotripods. Periodical transformation between wz and zb drives the epitaxy of the hierarchical nanotripods with N-polarity. The zb-GaN is formed by the poor diffusion of adatoms, and it can be suppressed by improving the ability of the Ga adatoms to migrate as the growth temperature increased. This controllable epitaxy of hierarchical GaN nanotripods allows quantum dots to be located at the phase junctions of the nanotripods and nanowires, suggesting a new recipe for multichannel quantum devices.

  17. Photovoltaic X-ray detectors based on epitaxial GaAs structures

    Energy Technology Data Exchange (ETDEWEB)

    Achmadullin, R.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Artemov, V.V. [Shubnikov Institute of Crystallography, Russian Academy of Sciences, 59 Leninski pr., Moscow B-333, 117333 (Russian Federation); Dvoryankin, V.F. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation)]. E-mail: vfd217@ire216.msk.su; Dvoryankina, G.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Dikaev, Yu.M. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakov, M.G. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Ermakova, O.N. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Chmil, V.B. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Holodenko, A.G. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation); Kudryashov, A.A.; Krikunov, A.I.; Petrov, A.G.; Telegin, A.A. [Institute of Radio Engineering and Electronics, Russian Academy of Sciences, 1 Ac. Vvedenski square, Fryazino 141190, Moscow region (Russian Federation); Vorobiev, A.P. [Scientific State Center, High Energy Physics Institute, Protvino, Moscow region (Russian Federation)

    2005-12-01

    A new type of the photovoltaic X-ray detector based on epitaxial p{sup +}-n-n'-n{sup +} GaAs structures which provides a high efficiency of charge collection in the non-bias operation mode at room temperature is proposed. The GaAs epitaxial structures were grown by vapor-phase epitaxy on heavily doped n{sup +}-GaAs(1 0 0) substrates. The absorption efficiency of GaAs X-ray detector is discussed. I-V and C-V characteristics of the photovoltaic X-ray detectors are analyzed. The built-in electric field profiles in the depletion region of epitaxial structures are measured by the EBIC method. Charge collection efficiency to {alpha}-particles and {gamma}-radiation are measured. The application of X-ray detectors is discussed.

  18. High Temperature Superconducting Underground Cable

    International Nuclear Information System (INIS)

    Farrell, Roger A.

    2010-01-01

    The purpose of this Project was to design, build, install and demonstrate the technical feasibility of an underground high temperature superconducting (HTS) power cable installed between two utility substations. In the first phase two HTS cables, 320 m and 30 m in length, were constructed using 1st generation BSCCO wire. The two 34.5 kV, 800 Arms, 48 MVA sections were connected together using a superconducting joint in an underground vault. In the second phase the 30 m BSCCO cable was replaced by one constructed with 2nd generation YBCO wire. 2nd generation wire is needed for commercialization because of inherent cost and performance benefits. Primary objectives of the Project were to build and operate an HTS cable system which demonstrates significant progress towards commercial progress and addresses real world utility concerns such as installation, maintenance, reliability and compatibility with the existing grid. Four key technical areas addressed were the HTS cable and terminations (where the cable connects to the grid), cryogenic refrigeration system, underground cable-to-cable joint (needed for replacement of cable sections) and cost-effective 2nd generation HTS wire. This was the worlds first installation and operation of an HTS cable underground, between two utility substations as well as the first to demonstrate a cable-to-cable joint, remote monitoring system and 2nd generation HTS.

  19. High-temperature axion potential

    International Nuclear Information System (INIS)

    Dowrick, N.J.; McDougall, N.A.

    1989-01-01

    We investigate the possibility of new terms in the high-temperature axion potential arising from the dynamical nature of the axion field and from higher-order corrections to the θ dependence in the free energy of the quark-gluon plasma. We find that the dynamical nature of the axion field does not affect the potential but that the higher-order effects lead to new terms in the potential which are larger than the term previously considered. However, neither the magnitude nor the sign of the potential can be calculated by a perturbative expansion of the free energy since the coupling is too large. We show that a change in the magnitude of the potential does not significantly affect the bound on the axion decay constant but that the sign of the potential is of crucial importance. By investigating the formal properties of the functional integral within the instanton dilute-gas approximation, we find that the sign of the potential does not change and that the minimum remains at θ=0. We conclude that the standard calculation of the axion energy today is not significantly modified by this investigation

  20. Creep of high temperature composites

    International Nuclear Information System (INIS)

    Sadananda, K.; Feng, C.R.

    1993-01-01

    High temperature creep deformation of composites is examined. Creep of composites depends on the interplay of many factors. One of the basic issues in the design of the creep resistant composites is the ability to predict their creep behavior from the knowledge of the creep behavior of the individual components. In this report, the existing theoretical models based on continuum mechanics principles are reviewed. These models are evaluated using extensive experimental data on molydisilicide-silicon carbide composites obtained by the authors. The analysis shows that the rule of mixture based on isostrain and isostress provides two limiting bounds wherein all other theoretical predictions fall. For molydisilicide composites, the creep is predominantly governed by the creep of the majority phase, i.e. the matrix with fibers deforming elastically. The role of back stresses both on creep rates and activation energies are shown to be minimum. Kinetics of creep in MoSi 2 is shown to be controlled by the process of dislocation glide with climb involving the diffusion of Mo atoms

  1. Microstructure of Co/X (X=Cu,Ag,Au) epitaxial thin films grown on Al2O3(0001) substrates

    International Nuclear Information System (INIS)

    Ohtake, Mitsuru; Akita, Yuta; Futamoto, Masaaki; Kirino, Fumiyoshi

    2007-01-01

    Epitaxial thin films of Co/X (X=Cu,Ag,Au) were prepared on Al 2 O 3 (0001) substrates at substrate temperatures of 100 and 300 degree sign C by UHV molecular beam epitaxy. A complicated microstructure was realized for the epitaxial thin films. In-situ reflection high-energy electron diffraction observation has shown that X atoms of the buffer layer segregated to the surface during Co layer deposition, and it yielded a unique epitaxial granular structure. The structure consists of small Co grains buried in the X buffer layer, where both the magnetic small Co grains and the nonmagnetic X layer are epitaxially grown on the single crystal substrate. The structure varied depending on the X element and the substrate temperature. The crystal structure of Co grains is influenced by the buffer layer material and determined to be hcp and fcc structures for the buffer layer materials of Au and Cu, respectively

  2. Epitaxial YBa2Cu3O7 on biaxially textured (001) Ni: An approach to high critical current density superconducting tapes

    International Nuclear Information System (INIS)

    Norton, D.P.; Goyal, A.; Budai, J.D.

    1997-01-01

    In-plane aligned, c-axis oriented YBa 2 Cu 3 O 7 (YBCO) films with superconducting critical current densities, J c , as high as 700,000 amperes per square centimeter at 77 kelvin have been grown on thermo-mechanically, rolled-textured (001) Ni tapes using pulsed-laser deposition. Epitaxial growth of oxide buffer layers directly on biaxially textured Ni, formed by recrystallization of cold-rolled pure Ni, enables the growth of 1.5 micrometer-thick YBCO films with superconducting properties that are comparable to those observed for epitaxial films on single crystal oxide substrates. This result represents a viable approach for producing long-length superconducting tapes for high current, high field applications at 77 kelvin

  3. Electronic properties of epitaxial 6H silicon carbide

    International Nuclear Information System (INIS)

    Wessels, B.W.; Gatos, H.C.

    1977-01-01

    The electrical conductivity and Hall coefficient were measured in the temperature range from 78 to 900 K for n-type epitaxially grown 6H silicon carbide. A many-valley model of the conduction band was used in the analysis of electron concentration as a function of temperature. From this analysis, the density of states mass to the free electron mass ratio per ellipsoid was calculated to be 0.45. It was estimated that the constant energy surface of the conduction band consists of three ellipsoids. The ionization energy of the shallowest nitrogen donor was found to be 105 meV, when the valley-orbit interaction was taken into account. The electron scattering mechanisms in the epitaxial layers were analyzed and it was shown that the dominant mechanism limiting electron mobility at high temperatures is inter-valley scattering and at low temperatures (200K), impurity and space charge scattering. A value of 360 cm 2 /V sec was calculated for the maximum room temperature Hall mobility expected for electrons in pure 6H SiC. The effect of epitaxial growth temperature on room temperature Hall mobility was also investigated. (author)

  4. High Temperature Chemistry at NASA: Hot Topics

    Science.gov (United States)

    Jacobson, Nathan S.

    2014-01-01

    High Temperature issues in aircraft engines Hot section: Ni and Co based Superalloys Oxidation and Corrosion (Durability) at high temperatures. Thermal protection system (TPS) and RCC (Reinforced Carbon-Carbon) on the Space Shuttle Orbiter. High temperatures in other worlds: Planets close to their stars.

  5. Targets on the basis of ferrites and high-temperature superconductors for ion-plasma sputtering

    International Nuclear Information System (INIS)

    Lepeshev, A.A.; Saunin, V.N.; Telegin, S.V.; Polyakova, K.P.; Seredkin, V.A.; Pol'skij, A.I.

    2000-01-01

    Paper describes a method to produce targets for ion-plasma sputtering using plasma splaying of the appropriate powders on a cooled metal basis. Application of the plasma process was demonstrated to enable to produce complex shaped targets under the controlled atmosphere on the basis of ceramic materials ensuring their high composition homogeneity, as well as, reliable mechanical and thermal contact of the resultant coating with the base. One carried out experiments in ion-plasma sputtering of targets to prepare ferrite polycrystalline films to be used in magnetooptics and to prepare high-temperature superconductor epitaxial films [ru

  6. Self-assembled epitaxial NiSi2 nanowires on Si(001) by reactive deposition epitaxy

    International Nuclear Information System (INIS)

    Chen, S.Y.; Chen, L.J.

    2006-01-01

    Self-assembled epitaxial NiSi 2 nanowires have been fabricated on Si(001) by reactive deposition epitaxy (RDE). The RDE method promoted nanowire growth since it provides deposited atoms sufficient kinetic energy for movement on the Si surface during the growth of silicide islands. The twin-related interface between NiSi 2 and Si is directly related to the nanowire formation since it breaks the symmetry of the surface and leads to the asymmetric growth. The temperature of RDE was found to greatly influence the formation of nanowires. By RDE at 750 deg. C, a high density of NiSi 2 nanowires was formed with an average aspect ratio of 30

  7. High temperature vapors science and technology

    CERN Document Server

    Hastie, John

    2012-01-01

    High Temperature Vapors: Science and Technology focuses on the relationship of the basic science of high-temperature vapors to some areas of discernible practical importance in modern science and technology. The major high-temperature problem areas selected for discussion include chemical vapor transport and deposition; the vapor phase aspects of corrosion, combustion, and energy systems; and extraterrestrial high-temperature species. This book is comprised of seven chapters and begins with an introduction to the nature of the high-temperature vapor state, the scope and literature of high-temp

  8. Evaluation of high temperature pressure sensors

    International Nuclear Information System (INIS)

    Choi, In-Mook; Woo, Sam-Yong; Kim, Yong-Kyu

    2011-01-01

    It is becoming more important to measure the pressure in high temperature environments in many industrial fields. However, there is no appropriate evaluation system and compensation method for high temperature pressure sensors since most pressure standards have been established at room temperature. In order to evaluate the high temperature pressure sensors used in harsh environments, such as high temperatures above 250 deg. C, a specialized system has been constructed and evaluated in this study. The pressure standard established at room temperature is connected to a high temperature pressure sensor through a chiller. The sensor can be evaluated in conditions of changing standard pressures at constant temperatures and of changing temperatures at constant pressures. According to the evaluation conditions, two compensation methods are proposed to eliminate deviation due to sensitivity changes and nonlinear behaviors except thermal hysteresis.

  9. Structure and chemistry of epitaxial ceria thin films on yttria-stabilized zirconia substrates, studied by high resolution electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sinclair, Robert, E-mail: bobsinc@stanford.edu [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Lee, Sang Chul, E-mail: sclee99@stanford.edu [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Shi, Yezhou; Chueh, William C. [Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305 (United States); Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States); Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA 94025 (United States)

    2017-05-15

    We have applied aberration-corrected transmission electron microscopy (TEM) imaging and electron energy loss spectroscopy (EELS) to study the structure and chemistry of epitaxial ceria thin films, grown by pulsed laser deposition onto (001) yttria-stabilized zirconia (YSZ) substrates. There are few observable defects apart from the expected mismatch interfacial dislocations and so the films would be expected to have good potential for applications. Under high electron beam dose rate (above about 6000 e{sup -}/Å{sup 2}s) domains of an ordered structure appear and these are interpreted as being created by oxygen vacancy ordering. The ordered structure does not appear at lower lose rates (ca. 2600 e{sup -}/Å{sup 2}s) and can be removed by imaging under 1 mbar oxygen gas in an environmental TEM. EELS confirms that there is both oxygen deficiency and the associated increase in Ce{sup 3+} versus Ce{sup 4+} cations in the ordered domains. In situ high resolution TEM recordings show the formation of the ordered domains as well as atomic migration along the ceria thin film (001) surface. - Highlights: • The local structure and chemistry of ceria can be studied by TEM combined with EELS. • At lower electron, there are no observable changes in the ceria thin films. • At higher dose rates, an ordered phase is created due to oxygen vacancy ordering. • In situ HRTEM shows the oxygen vacancy ordering and the movement of surface atoms.

  10. Extreme triple asymmetric (ETAS) epitaxial designs for increased efficiency at high powers in 9xx-nm diode lasers

    Science.gov (United States)

    Kaul, T.; Erbert, G.; Maaßdorf, A.; Martin, D.; Crump, P.

    2018-02-01

    Broad area lasers that are tailored to be most efficient at the highest achievable optical output power are sought by industry to decrease operation costs and improve system performance. Devices using Extreme-Double-ASymmetric (EDAS) epitaxial designs are promising candidates for improved efficiency at high optical output powers due to low series resistance, low optical loss and low carrier leakage. However, EDAS designs leverage ultra-thin p-side waveguides, meaning that the optical mode is shifted into the n-side waveguide, resulting in a low optical confinement in the active region, low gain and hence high threshold current, limiting peak performance. We introduce here explicit design considerations that enable EDAS-based devices to be developed with increased optical confinement in the active layer without changing the p-side layer thicknesses. Specifically, this is realized by introducing a third asymmetric component in the vicinity of the quantum well. We call this approach Extreme-Triple-ASymmetric (ETAS) design. A series of ETAS-based vertical designs were fabricated into broad area lasers that deliver up to 63% power conversion efficiency at 14 W CW optical output power from a 100 μm stripe laser, which corresponds to the operation point of a kW optical output power in a laser bar. The design process, the impact of structural changes on power saturation mechanisms and finally devices with improved performance will be presented.

  11. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao; Ng, Tien Khee; Tseng, Chien-Chih; Li, Jun; Shi, Yumeng; Wei, Nini; Zhang, Daliang; Consiglio, Giuseppe Bernardo; Prabaswara, Aditya; Alhamoud, Abdullah Ali; Albadri, Abdulrahman  M.; Alyamani, Ahmed Y.; Zhang, Xixiang; Li, Lain-Jong; Ooi, Boon S.

    2017-01-01

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  12. InGaN/GaN nanowires epitaxy on large-area MoS2 for high-performance light-emitters

    KAUST Repository

    Zhao, Chao

    2017-05-18

    The recent study of a wide range of layered transition metal dichalcogenides (TMDCs) has created a new era for device design and applications. In particular, the concept of van der Waals epitaxy (vdWE) utilizing layered TMDCs has the potential to broaden the family of epitaxial growth techniques beyond the conventional methods. We report herein, for the first time, the monolithic high-power, droop-free, and wavelength tunable InGaN/GaN nanowire light-emitting diodes (NW-LEDs) on large-area MoS2 layers formed by sulfurizing entire Mo substrates. MoS2 serves as both a buffer layer for high-quality GaN nanowires growth and a sacrificial layer for epitaxy lift-off. The LEDs obtained on nitridated MoS2 via quasi vdWE show a low turn-on voltage of ∼2 V and light output power up to 1.5 mW emitting beyond the “green gap”, without an efficiency droop up to the current injection of 1 A (400 A cm−2), by virtue of high thermal and electrical conductivities of the metal substrates. The discovery of the nitride/layered TMDCs/metal heterostructure platform also ushers in the unparalleled opportunities of simultaneous high-quality nitrides growth for high-performance devices, ultralow-profile optoelectronics, energy harvesting, as well as substrate reusability for practical applications.

  13. High temperature turbine engine structure

    Energy Technology Data Exchange (ETDEWEB)

    Carruthers, W.D.; Boyd, G.L.

    1993-07-20

    A hybrid ceramic/metallic gas turbine is described comprising; a housing defining an inlet, an outlet, and a flow path communicating the inlet with the outlet for conveying a flow of fluid through the housing, a rotor member journaled by the housing in the flow path, the rotor member including a compressor rotor portion rotatively inducting ambient air via the inlet and delivering this air pressurized to the flow path downstream of the compressor rotor, a combustor disposed in the flow path downstream of the compressor receiving the pressurized air along with a supply of fuel to maintain combustion providing a flow of high temperature pressurized combustion products in the flow path downstream thereof, the rotor member including a turbine rotor portion disposed in the flow path downstream of the combustor and rotatively expanding the combustion products toward ambient for flow from the turbine engine via the outlet, the turbine rotor portion providing shaft power driving the compressor rotor portion and an output shaft portion of the rotor member, a disk-like metallic housing portion journaling the rotor member to define a rotational axis therefore, and a disk-like annular ceramic turbine shroud member bounding the flow path downstream of the combustor and circumscribing the turbine rotor portion to define a running clearance therewith, the disk-like ceramic turbine shroud member having a reference axis coaxial with the rotational axis and being spaced axially from the metallic housing portion in mutually parallel concentric relation therewith and a plurality of spacers disposed between ceramic disk-like shroud member and the metallic disk-like housing portion and circumferentially spaced apart, each of the spacers having a first and second end portion having an end surface adjacent the shroud member and the housing portion respectively, the end surfaces having a cylindrical curvature extending transversely relative to the shroud member and the housing portion.

  14. Photon confinement in high-efficiency, thin-film III-V solar cells obtained by epitaxial lift-off

    International Nuclear Information System (INIS)

    Schermer, J.J.; Bauhuis, G.J.; Mulder, P.; Haverkamp, E.J.; Deelen, J. van; Niftrik, A.T.J. van; Larsen, P.K.

    2006-01-01

    Using the epitaxial lift-off (ELO) technique, a III-V device structure can be separated from its GaAs substrate by selective wet etching of a thin release layer. The thin-film structures obtained by the ELO process can be cemented or van der Waals bonded on arbitrary smooth surface carriers for further processing. It is shown that the ELO method, initially able to separate millimetre-sized GaAs layers with a lateral etch rate of about 1 mm/h, has been developed to a process capable to free the entire 2-in. epitaxial structures from their substrates with etch rates up to 30 mm/h. With these characteristics the method has a large potential for the production of high efficiency thin-film solar cells. By choosing the right deposition and ELO strategy, the thin-film III-V cells can be adequately processed on both sides allowing for an entire range of new cell structures. In the present work, the performance of semi-transparent bifacial solar cells, produced by the deposition of metal grid contacts on both sides, was evaluated. Reflection of light at the rear side of the bifacial GaAs solar cells was found to result in an enhanced collection probability of the photon-induced carriers compared to that of regular III-V cells on a GaAs substrate. To enhance this effect, thin-film GaAs cells with gold mirror back contacts were prepared. Even in their present premature stage of development, these single-junction thin-film cells reached a record efficiency of 24.5% which is already very close to the 24.9% efficiency that was obtained with a regular GaAs cell on a GaAs substrate. From this it could be concluded that, as a result of the photon confinement, ELO cells require a significantly thinner base layer than regular GaAs cells while at the same time they have the potential to reach a higher efficiency

  15. Growth-temperature- and thermal-anneal-induced crystalline reorientation of aluminum on GaAs (100) grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Liu, H. F.; Chua, S. J.; Xiang, N.

    2007-01-01

    The authors investigated the growth of Al thin films on GaAs (100) substrates by molecular beam epitaxy. It is found that the growth at 550 degree sign C results in a texture that consists of (100)Al[010](parallel sign)(100)GaAs[011] and (100)Al[010](parallel sign)(100)GaAs[010] rotated 45 degree sign with respect to each other, while the growth at 300 degree sign C leads to a mixture phase of (100)Al[010](parallel sign)(100)GaAs[011] and (110)Al[001](parallel sign)(100)GaAs[011]. In situ annealing of the Al film grown at 300 degree sign C causes a reorientation of the crystalline from (100)Al[010](parallel sign)(100)GaAs[011] to (110)Al[001](parallel sign)(100)GaAs[011]. The grain sizes of the Al film are increased by the increased growth temperature and in situ annealing; the ratio of the exposed to the covered surface is not changed significantly by changing the growth temperature but decreased by annealing; and the small islands in between the large ones are removed by annealing. These observations are explained based on island migration and coalescence

  16. Lanthanide gallate perovskite-type substrates for epitaxial, high-Tc superconducting Ba2YCu3O7-δ films

    International Nuclear Information System (INIS)

    Giess, E.A.; Sandstrom, R.L.; Gallagher, W.J.; Gupta, A.; Shinde, S.L.; Cook, R.F.; Cooper, E.L.; O'Sullivan, E.M.J.; Roldan, J.M.; Segmuller, A.D.; Angilello, J.

    1990-01-01

    This paper reports on the use of lanthanide gallate perovskite-type substrates for the deposition of epitaxial, high-T c superconducting Ba 2 YCu 3 O 7-δ (BYCO) films. They were also found to have moderate dielectric constants (∼25 compared to ∼ 277 for SrTiO 3 ). This study was undertaken to further explore the use of LaGaO 3 , NdGaO 3 , SrTiO 3 , MgO, and Y-stabilized ZrO 2 substrates, prepared from single-crystal joules grown by several suppliers using the Czochralski method. Films were prepared by cylindrical magnetron sputtering and laser ablation. Substrate evaluations included measurement of dielectric constant and loss, thermal expansion, and mechanical hardness and toughness. In addition to their moderate dielectric constants, they were found to have satisfactory mechanical properties, except for the twinning tendency of LaGaO 3 . Lattice mismatch strains were calculated for orthorhombic BYCO films on a number of substrates. NdGaO 3 was found to have the best lattice match with BYCO, and is now available twin-free

  17. Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

    Science.gov (United States)

    Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

    2018-04-25

    In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

  18. High temperature water chemistry monitoring

    International Nuclear Information System (INIS)

    Aaltonen, P.

    1992-01-01

    Almost all corrosion phenomena in nuclear power plants can be prevented or at least damped by water chemistry control or by the change of water chemistry control or by the change of water chemistry. Successful water chemistry control needs regular and continuous monitoring of such water chemistry parameters like dissolved oxygen content, pH, conductivity and impurity contents. Conventionally the monitoring is carried out at low pressures and temperatures, which method, however, has some shortcomings. Recently electrodes have been developed which enables the direct monitoring at operating pressures and temperatures. (author). 2 refs, 5 figs

  19. X-ray diffraction study of InAlAs-InGaAs on InP high electron mobility transistor structure prepared by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Liu, H.Y.; Kao, Y.C.; Kim, T.S.

    1990-01-01

    High-electron mobility transistors (HEMTs) can be prepared by growing alternating epitaxial layers of InAlAs and InGaAs on InP substrates. Lattice matched HEMTs are obtained by growing layers of IN x Al (1-x) As and In y Ga (1-y) As with x ≅ 0.5227 and y ≅ 0.5324. Varying the values of x and y by controlling the individual flux during molecular-beam epitaxial (MBE) growth, one can obtain pseudomorphic HEMTs. Pseudomorphic HEMTs may have superior electronic transport properties and larger conduction band discontinuity when compared to an unstrained one. The precise control of the composition is thus important to the properties of HEMTs. This control is however very difficult and the values of x and y may vary from run to run. The authors demonstrate in this paper the capability of a double crystal rocking curve (DCRC) on the structure characterization

  20. Demonstration of high-responsivity epitaxial β-Ga2O3/GaN metal–heterojunction-metal broadband UV-A/UV-C detector

    Science.gov (United States)

    Kalra, Anisha; Vura, Sandeep; Rathkanthiwar, Shashwat; Muralidharan, Rangarajan; Raghavan, Srinivasan; Nath, Digbijoy N.

    2018-06-01

    We demonstrate epitaxial β-Ga2O3/GaN-based vertical metal–heterojunction-metal (MHM) broadband UV-A/UV-C photodetectors with high responsivity (3.7 A/W) at 256 and 365 nm, UV-to-visible rejection >103, and a photo-to-dark current ratio of ∼100. A small (large) conduction (valence) band offset at the heterojunction of pulsed laser deposition (PLD)-grown β-Ga2O3 on metal organic chemical vapor deposition (MOCVD)-grown GaN-on-silicon with epitaxial registry, as confirmed by X-ray diffraction (XRD) azimuthal scanning, is exploited to realize detectors with an asymmetric photoresponse and is explained with one-dimensional (1D) band diagram simulations. The demonstrated novel vertical MHM detectors on silicon are fully scalable and promising for enabling focal plane arrays for broadband ultraviolet sensing.

  1. High temperature soldering of graphite

    International Nuclear Information System (INIS)

    Anikin, L.T.; Kravetskij, G.A.; Dergunova, V.S.

    1977-01-01

    The effect is studied of the brazing temperature on the strength of the brazed joint of graphite materials. In one case, iron and nickel are used as solder, and in another, molybdenum. The contact heating of the iron and nickel with the graphite has been studied in the temperature range of 1400-2400 ged C, and molybdenum, 2200-2600 deg C. The quality of the joints has been judged by the tensile strength at temperatures of 2500-2800 deg C and by the microstructure. An investigation into the kinetics of carbon dissolution in molten iron has shown that the failure of the graphite in contact with the iron melt is due to the incorporation of iron atoms in the interbase planes. The strength of a joint formed with the participation of the vapour-gas phase is 2.5 times higher than that of a joint obtained by graphite recrystallization through the carbon-containing metal melt. The critical temperatures are determined of graphite brazing with nickel, iron, and molybdenum interlayers, which sharply increase the strength of the brazed joint as a result of the formation of a vapour-gas phase and deposition of fine-crystal carbon

  2. Resonance integral calculations for high temperature reactors

    International Nuclear Information System (INIS)

    Blake, J.P.H.

    1960-02-01

    Methods of calculation of resonance integrals of finite dilution and temperature are given for both, homogeneous and heterogeneous geometries, together with results obtained from these methods as applied to the design of high temperature reactors. (author)

  3. Molecular beam epitaxy growth of In0.52Al0.48As/In0.53Ga0.47As metamorphic high electron mobility transistor employing growth interruption and in situ rapid thermal annealing

    International Nuclear Information System (INIS)

    Ihn, Soo-Ghang; Jo, Seong June; Song, Jong-In

    2006-01-01

    We investigated the effects of high temperature (∼700 deg. C) in situ rapid thermal annealing (RTA) carried out during growth interruption between spacer and δ-doping layers of an In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As metamorphic high electron mobility transistor (MHEMT) grown on a compositionally graded InGaAlAs buffer layer. The in situ RTA improved optical and structural properties of the MHEMT without degradation of transport property, while postgrowth RTA improved the structural property of the MHEMT but significantly degraded mobility due to the defect-assisted Si diffusion. The results indicate the potential of the in situ RTA for use in the growth of high-quality metamorphic epitaxial layers for optoelectronic applications requiring improved optical and electrical properties

  4. Hot nuclei: high temperatures, high angular momenta

    International Nuclear Information System (INIS)

    Guerreau, D.

    1991-01-01

    A review is made of the present status concerning the production of hot nuclei above 5 MeV temperature, concentrating mainly on the possible experimental evidences for the attainment of a critical temperature, on the existence of dynamical limitations to the energy deposition and on the experimental signatures for the formation of hot spinning nuclei. The data strongly suggest a nuclear disassembly in collisions involving very heavy ions at moderate incident velocities. Furthermore, hot nuclei seem to be quite stable against rotation on a short time scale. (author) 26 refs.; 12 figs

  5. Deep Trek High Temperature Electronics Project

    Energy Technology Data Exchange (ETDEWEB)

    Bruce Ohme

    2007-07-31

    This report summarizes technical progress achieved during the cooperative research agreement between Honeywell and U.S. Department of Energy to develop high-temperature electronics. Objects of this development included Silicon-on-Insulator (SOI) wafer process development for high temperature, supporting design tools and libraries, and high temperature integrated circuit component development including FPGA, EEPROM, high-resolution A-to-D converter, and a precision amplifier.

  6. Epitaxial growth of ZnO layers on (111) GaAs substrates by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Ding Jian; Zhang Di; Konomi, Takaharu; Saito, Katsuhiko; Guo Qixin

    2012-01-01

    ZnO layers were grown on (111) GaAs substrates by laser molecular epitaxy at substrate temperatures between 200 and 550 °C. X-ray diffraction analysis revealed that c-axis of ZnO epilayer with a wurtzite structure is perpendicular to the substrate surface. X-ray rocking curves and Raman spectroscopy showed that the crystal quality of ZnO epilayers depends on the substrate temperature during the growth. Strong near-band-edge emission in the UV region without any deep-level emissions was observed from the ZnO epilayers at room temperature. The results indicate that laser molecular beam epitaxy is a promising growth method for obtaining high-quality ZnO layers on (111) GaAs substrates.

  7. High temperature alloys and ceramic heat exchanger

    International Nuclear Information System (INIS)

    Okamoto, Masaharu

    1984-04-01

    From the standpoint of energy saving, the future operating temperatures of process heat and gas turbine plants will become higher. For this purpose, ceramics is the most promissing candidate material in strength for application to high-temperature heat exchangers. This report deals with a servey of characteristics of several high-temperature metallic materials and ceramics as temperature-resistant materials; including a servey of the state-of-the-art of ceramic heat exchanger technologies developed outside of Japan, and a study of their application to the intermediate heat exchanger of VHTR (a very-high-temperature gas-cooled reactor). (author)

  8. High-temperature peridotites - lithospheric or asthenospheric?

    International Nuclear Information System (INIS)

    Hops, J.J.; Gurney, J.J.

    1990-01-01

    High-temperature peridotites by definition yield equilibration temperatures greater than 1100 degrees C. On the basis of temperature and pressure calculations, these high-temperature peridotites are amongst the deepest samples entrained by kimberlites on route to the surface. Conflicting models proposing either a lithospheric or asthenospheric origin for the high-temperature peridotites have been suggested. A detailed study of these xenoliths from a single locality, the Jagersfontein kimberlite in the Orange Free State, has been completed as a means of resolving this controversy. 10 refs., 2 figs

  9. GaAsBi/GaAs multi-quantum well LED grown by molecular beam epitaxy using a two-substrate-temperature technique

    Science.gov (United States)

    Kisan Patil, Pallavi; Luna, Esperanza; Matsuda, Teruyoshi; Yamada, Kohki; Kamiya, Keisuke; Ishikawa, Fumitaro; Shimomura, Satoshi

    2017-03-01

    We report a GaAs0.96Bi0.04/GaAs multiple quantum well (MQW) light emitting diode (LED) grown by molecular beam epitaxy using a two-substrate-temperature (TST) technique. In particular, the QWs and the barriers in the intrinsic region were grown at the different temperatures of {T}{{GaAsBi}} = 350 °C and {T}{{GaAs}} = 550 ^\\circ {{C}}, respectively. Investigations of the microstructure using transmission electron microscopy (TEM) reveal homogeneous MQWs free of extended defects. Furthermore, the local determination of the Bi distribution profile across the MQWs region using TEM techniques confirm the uniform Bi distribution, while revealing a slightly chemically graded GaAs-on-GaAsBi interface due to Bi surface segregation. Despite this small broadening, we found that Bi segregation is significantly reduced (up to 18% reduction) compared to previous reports on Bi segregation in GaAsBi/GaAs MQWs. Hence, the TST procedure proves as a very efficient method to reduce Bi segregation and thus increase the quality of the layers and interfaces. These improvements positively reflect in the optical properties. Room temperature photoluminescence and electroluminescence (EL) at 1.23 μm emission wavelength are successfully demonstrated using TST MQWs containing less Bi content than in previous reports. Finally, LED fabricated using the present TST technique show current-voltage (I-V) curves with a forward voltage of 3.3 V at an injection current of 130 mA under 1.0 kA cm-2 current excitation. These results not only demonstrate that TST technique provides optical device quality GaAsBi/GaAs MQWs but highlight the relevance of TST-based growth techniques on the fabrication of future heterostructure devices based on dilute bismides.

  10. Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

    Energy Technology Data Exchange (ETDEWEB)

    Galiev, G. B.; Klimov, E. A. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Vasiliev, A. L.; Imamov, R. M. [Russian Academy of Sciences, Shubnikov Institute of Crystallography, Federal Scientific Research Centre “Crystallography and Photonics,” (Russian Federation); Pushkarev, S. S., E-mail: s-s-e-r-p@mail.ru [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation); Trunkin, I. N. [National Research Centre “Kurchatov Institute” (Russian Federation); Maltsev, P. P. [Russian Academy of Sciences, Institute of Ultra High Frequency Semiconductor Electronics (Russian Federation)

    2017-01-15

    The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers of arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.

  11. High temperature phase equilibria and phase diagrams

    CERN Document Server

    Kuo, Chu-Kun; Yan, Dong-Sheng

    2013-01-01

    High temperature phase equilibria studies play an increasingly important role in materials science and engineering. It is especially significant in the research into the properties of the material and the ways in which they can be improved. This is achieved by observing equilibrium and by examining the phase relationships at high temperature. The study of high temperature phase diagrams of nonmetallic systems began in the early 1900s when silica and mineral systems containing silica were focussed upon. Since then technical ceramics emerged and more emphasis has been placed on high temperature

  12. Development of High Temperature Solid Lubricant Coatings

    National Research Council Canada - National Science Library

    Bhattacharya, Rabi

    1999-01-01

    ... environment. To test this approach, UES and Cleveland State University have conducted experiments to form cesium oxythiotungstate, a high temperature lubricant, on Inconel 718 surface from composite coatings...

  13. Advances in high temperature chemistry 1

    CERN Document Server

    Eyring, Leroy

    2013-01-01

    Advances in High Temperature Chemistry, Volume 1 describes the complexities and special and changing characteristics of high temperature chemistry. After providing a brief definition of high temperature chemistry, this nine-chapter book goes on describing the experiments and calculations of diatomic transition metal molecules, as well as the advances in applied wave mechanics that may contribute to an understanding of the bonding, structure, and spectra of the molecules of high temperature interest. The next chapter provides a summary of gaseous ternary compounds of the alkali metals used in

  14. High temperature mechanical properties of iron aluminides

    International Nuclear Information System (INIS)

    Morris, D. G.; Munoz-Morris, M. A.

    2001-01-01

    Considerable attention has been given to the iron aluminide family of intermetallics over the past years since they offer considerable potential as engineering materials for intermediate to high temperature applications, particularly in cases where extreme oxidation or corrosion resistance is required. Despite efforts at alloy development, however, high temperature strength remains low and creep resistance poor. Reasons for the poor high-temperature strength of iron aluminides will be discussed, based on the ordered crystal structure, the dislocation structure found in the materials, and the mechanisms of dislocation pinning operating. Alternative ways of improving high temperature strength by microstructural modification and the inclusion of second phase particles will also be considered. (Author)

  15. Investigations into High Temperature Components and Packaging

    Energy Technology Data Exchange (ETDEWEB)

    Marlino, L.D.; Seiber, L.E.; Scudiere, M.B.; M.S. Chinthavali, M.S.; McCluskey, F.P.

    2007-12-31

    The purpose of this report is to document the work that was performed at the Oak Ridge National Laboratory (ORNL) in support of the development of high temperature power electronics and components with monies remaining from the Semikron High Temperature Inverter Project managed by the National Energy Technology Laboratory (NETL). High temperature electronic components are needed to allow inverters to operate in more extreme operating conditions as required in advanced traction drive applications. The trend to try to eliminate secondary cooling loops and utilize the internal combustion (IC) cooling system, which operates with approximately 105 C water/ethylene glycol coolant at the output of the radiator, is necessary to further reduce vehicle costs and weight. The activity documented in this report includes development and testing of high temperature components, activities in support of high temperature testing, an assessment of several component packaging methods, and how elevated operating temperatures would impact their reliability. This report is organized with testing of new high temperature capacitors in Section 2 and testing of new 150 C junction temperature trench insulated gate bipolar transistor (IGBTs) in Section 3. Section 4 addresses some operational OPAL-GT information, which was necessary for developing module level tests. Section 5 summarizes calibration of equipment needed for the high temperature testing. Section 6 details some additional work that was funded on silicon carbide (SiC) device testing for high temperature use, and Section 7 is the complete text of a report funded from this effort summarizing packaging methods and their reliability issues for use in high temperature power electronics. Components were tested to evaluate the performance characteristics of the component at different operating temperatures. The temperature of the component is determined by the ambient temperature (i.e., temperature surrounding the device) plus the

  16. High temperature humidity sensing materials

    International Nuclear Information System (INIS)

    Tsai, P.P.; Tanase, S.; Greenblatt, M.

    1989-01-01

    This paper reports on new proton conducting materials prepared and characterized for potential applications in humidity sensing at temperatures higher than 100 degrees C by complex impedance or galvanic cell type techniques. Calcium metaphosphate, β-Ca(PO 3 ) 2 as a galvanic cell type sensor material yields reproducible signals in the range from 5 to 200 mm Hg water vapor pressure at 578 degrees C, with short response time (∼ 30 sec). Polycrystalline samples of α-Zr(HPO 4 ) 2 and KMo 3 P 5.8 Si 2 O 25 , and the gel converted ceramic, 0.10Li 2 O-0.25P 2 O 5 -0.65SiO 2 as impedance sensor materials show decreases in impedance with increasing humidity in the range from 9 mm Hg to 1 atm water vapor pressure at 179 degrees C

  17. Spin Hall magnetoresistance at high temperatures

    International Nuclear Information System (INIS)

    Uchida, Ken-ichi; Qiu, Zhiyong; Kikkawa, Takashi; Iguchi, Ryo; Saitoh, Eiji

    2015-01-01

    The temperature dependence of spin Hall magnetoresistance (SMR) in Pt/Y 3 Fe 5 O 12 (YIG) bilayer films has been investigated in a high temperature range from room temperature to near the Curie temperature of YIG. The experimental results show that the magnitude of the magnetoresistance ratio induced by the SMR monotonically decreases with increasing the temperature and almost disappears near the Curie temperature. We found that, near the Curie temperature, the temperature dependence of the SMR in the Pt/YIG film is steeper than that of a magnetization curve of the YIG; the critical exponent of the magnetoresistance ratio is estimated to be 0.9. This critical behavior of the SMR is attributed mainly to the temperature dependence of the spin-mixing conductance at the Pt/YIG interface

  18. Nuclear fuels for very high temperature applications

    International Nuclear Information System (INIS)

    Lundberg, L.B.; Hobbins, R.R.

    1992-01-01

    The success of the development of nuclear thermal propulsion devices and thermionic space nuclear power generation systems depends on the successful utilization of nuclear fuel materials at temperatures in the range 2000 to 3500 K. Problems associated with the utilization of uranium bearing fuel materials at these very high temperatures while maintaining them in the solid state for the required operating times are addressed. The critical issues addressed include evaporation, melting, reactor neutron spectrum, high temperature chemical stability, fabrication, fission induced swelling, fission product release, high temperature creep, thermal shock resistance, and fuel density, both mass and fissile atom. Candidate fuel materials for this temperature range are based on UO 2 or uranium carbides. Evaporation suppression, such as a sealed cladding, is required for either fuel base. Nuclear performance data needed for design are sparse for all candidate fuel forms in this temperature range, especially at the higher temperatures

  19. Corrosion Resistant Coatings for High Temperature Applications

    Energy Technology Data Exchange (ETDEWEB)

    Besman, T.M.; Cooley, K.M.; Haynes, J.A.; Lee, W.Y.; Vaubert, V.M.

    1998-12-01

    Efforts to increase efficiency of energy conversion devices have required their operation at ever higher temperatures. This will force the substitution of higher-temperature structural ceramics for lower temperature materials, largely metals. Yet, many of these ceramics will require protection from high temperature corrosion caused by combustion gases, atmospheric contaminants, or the operating medium. This paper discusses examples of the initial development of such coatings and materials for potential application in combustion, aluminum smelting, and other harsh environments.

  20. Aspects of high temperature superconductivity

    International Nuclear Information System (INIS)

    Deutscher, G.

    1989-01-01

    We present some remarks on special features that distinguish the phenomenology of the new high T c oxides from that of the conventional superconductors. They include a measurable width of the critical region and a high sensitivity to crystallographic defects. A consistent Landau Ginsburg interpretation is possible, with a short coherence length <15 A and a penetration depth <900 A. The latter is somewhat smaller than the currently accepted value, and implies a broad band scheme

  1. Interface state density evaluation of high quality hetero-epitaxial 3C–SiC(0 0 1) for high-power MOSFET applications

    Energy Technology Data Exchange (ETDEWEB)

    Anzalone, R., E-mail: ruggero.anzalone@imm.cnr.it; Privitera, S.; Camarda, M.; Alberti, A.; Mannino, G.; Fiorenza, P.; Di Franco, S.; La Via, F.

    2015-08-15

    Graphical abstract: Figure shows the normalized capacitance (C/C{sub OX}) versus voltage (V) for the MOS capacitors on 3 μm, 7 μm thick 3C–SiC films and silicon (as reference), respectively. The shift of the curve respect to the reference is due to the presence of fixed and/or trapped charge in the oxide and interface trapped charge, due to the presence of interface states of density D{sub it}, located at the semiconductor/oxide interface. - Highlights: • We analyzed the flat-band voltage shift for different semiconductor epi-thickness. • The interface state density as a function of epi-defects was evaluated. • We observed the relationship between XRD and C–V results. • Epitaxial thickness influence on interface state density was evaluated. - Abstract: The effects of the crystal quality and surface morphology on the electrical properties of MOS capacitors have been studied in devices manufactured on 3C–SiC epitaxial layers grown on silicon (1 0 0) substrate. The interface state density, which represents one of the most important parameters, has been determined through capacitance measurements. A cross-correlation between high resolution X-ray diffraction, AFM analysis and electrical conductance measurements has allowed to determine the relationship between the crystalline quality and the interface state density. A decrease of the interface state density down to about 10{sup 11} cm{sup −2} eV{sup −1} was observed with improving the crystalline quality.

  2. Borehole Stability in High-Temperature Formations

    Science.gov (United States)

    Yan, Chuanliang; Deng, Jingen; Yu, Baohua; Li, Wenliang; Chen, Zijian; Hu, Lianbo; Li, Yang

    2014-11-01

    In oil and gas drilling or geothermal well drilling, the temperature difference between the drilling fluid and formation will lead to an apparent temperature change around the borehole, which will influence the stress state around the borehole and tend to cause borehole instability in high geothermal gradient formations. The thermal effect is usually not considered as a factor in most of the conventional borehole stability models. In this research, in order to solve the borehole instability in high-temperature formations, a calculation model of the temperature field around the borehole during drilling is established. The effects of drilling fluid circulation, drilling fluid density, and mud displacement on the temperature field are analyzed. Besides these effects, the effect of temperature change on the stress around the borehole is analyzed based on thermoelasticity theory. In addition, the relationships between temperature and strength of four types of rocks are respectively established based on experimental results, and thermal expansion coefficients are also tested. On this basis, a borehole stability model is established considering thermal effects and the effect of temperature change on borehole stability is also analyzed. The results show that the fracture pressure and collapse pressure will both increase as the temperature of borehole rises, and vice versa. The fracture pressure is more sensitive to temperature. Temperature has different effects on collapse pressures due to different lithological characters; however, the variation of fracture pressure is unrelated to lithology. The research results can provide a reference for the design of drilling fluid density in high-temperature wells.

  3. Scale hierarchy in high-temperature QCD

    CERN Document Server

    Akerlund, Oscar

    2013-01-01

    Because of asymptotic freedom, QCD becomes weakly interacting at high temperature: this is the reason for the transition to a deconfined phase in Yang-Mills theory at temperature $T_c$. At high temperature $T \\gg T_c$, the smallness of the running coupling $g$ induces a hierachy betwen the "hard", "soft" and "ultrasoft" energy scales $T$, $g T$ and $g^2 T$. This hierarchy allows for a very successful effective treatment where the "hard" and the "soft" modes are successively integrated out. However, it is not clear how high a temperature is necessary to achieve such a scale hierarchy. By numerical simulations, we show that the required temperatures are extremely high. Thus, the quantitative success of the effective theory down to temperatures of a few $T_c$ appears surprising a posteriori.

  4. Defect mediated van der Waals epitaxy of hexagonal boron nitride on graphene

    Science.gov (United States)

    Heilmann, M.; Bashouti, M.; Riechert, H.; Lopes, J. M. J.

    2018-04-01

    Van der Waals heterostructures comprising of hexagonal boron nitride and graphene are promising building blocks for novel two-dimensional devices such as atomically thin transistors or capacitors. However, demonstrators of those devices have been so far mostly fabricated by mechanical assembly, a non-scalable and time-consuming method, where transfer processes can contaminate the surfaces. Here, we investigate a direct growth process for the fabrication of insulating hexagonal boron nitride on high quality epitaxial graphene using plasma assisted molecular beam epitaxy. Samples were grown at varying temperatures and times and studied using atomic force microscopy, revealing a growth process limited by desorption at high temperatures. Nucleation was mostly commencing from morphological defects in epitaxial graphene, such as step edges or wrinkles. Raman spectroscopy combined with x-ray photoelectron measurements confirm the formation of hexagonal boron nitride and prove the resilience of graphene against the nitrogen plasma used during the growth process. The electrical properties and defects in the heterostructures were studied with high lateral resolution by tunneling current and Kelvin probe force measurements. This correlated approach revealed a nucleation apart from morphological defects in epitaxial graphene, which is mediated by point defects. The presented results help understanding the nucleation and growth behavior during van der Waals epitaxy of 2D materials, and point out a route for a scalable production of van der Waals heterostructures.

  5. Fusion blanket high-temperature heat transfer

    International Nuclear Information System (INIS)

    Fillo, J.A.

    1983-01-01

    Deep penetration of 14 MeV neutrons makes two-temperature region blankets feasible. A relatively low-temperature (approx. 300 0 C) metallic structure is the vacuum/coolant pressure boundary, while the interior of the blanket, which is a simple packed bed of nonstructural material, operates at very high temperatures (>1000 0 C). The water-cooled shell structure is thermally insulated from the steam-cooled interior. High-temperature steam can dramatically increase the efficiency of electric power generation, as well as produce hydrogen and oxygen-based synthetic fuels at high-efficiency

  6. High temperature oxidation behavior of ODS steels

    Science.gov (United States)

    Kaito, T.; Narita, T.; Ukai, S.; Matsuda, Y.

    2004-08-01

    Oxide dispersion strengthened (ODS) steels are being developing for application as advanced fast reactor cladding and fusion blanket materials, in order to allow increased operation temperature. Oxidation testing of ODS steel was conducted under a controlled dry air atmosphere to evaluate the high temperature oxidation behavior. This showed that 9Cr-ODS martensitic steels and 12Cr-ODS ferritic steels have superior high temperature oxidation resistance compared to 11 mass% Cr PNC-FMS and 17 mass% Cr ferritic stainless steel. This high temperature resistance is attributed to earlier formation of the protective α-Cr 2O 3 on the outer surface of ODS steels.

  7. Quantum electrodynamics at high temperature. 2

    International Nuclear Information System (INIS)

    Alvarez-Estrada, R.F.

    1988-01-01

    The photon sector of QED in d = 3 spatial dimensions is analyzed at high temperature thereby generalizing nontrivially a previous study for d = 1. The imaginary time formalism and an improved renormalized perturbation theory which incorporates second order Debye screening are used. General results are presented for the leading high temperature contributions to all renormalized connected photon Green's functions for fixed external momenta (much smaller than the temperature) to all orders in the improved perturbation theory. Those leading contributions are ultraviolet finite, infrared convergent and gauge invariant, and display an interesting form of dimensional reduction at high temperature. A new path integral representations is given for the high temperature partition function with an external photon source, which is shown to generate all leading high temperature Green's functions mentioned above, and, so, it displays neatly the kind of dimensional reduction which makes QED to become simpler at high temperature. This limiting partition function corresponds to an imaginary time dependent electron positron field interacting with an electromagnetic field at zero imaginary time, and it depends on the renormalized electron mass and electric charge, the second order contribution to the usual renormalization constant Z 3 and a new mass term, which is associated to the photon field with vanishing Lorentz index. The new mass term corresponds to a finite number of diagrams in the high temperature improved perturbation theory and carriers ultraviolet divergences which are compensated for by other contributions (so that the leading high temperature Green's functions referred to above are ultraviolet finite). The dominant high temperature contributions to the renormalized thermodynamic potential to all perturbative orders: i) are given in terms of the above leading high-temperature contributions to the photon Green's functions (except for a few diagrams of low order in the

  8. Molecular beam epitaxy of Cd3As2 on a III-V substrate

    Directory of Open Access Journals (Sweden)

    Timo Schumann

    2016-12-01

    Full Text Available Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac semimetal Cd3As2 by molecular beam epitaxy. We show that epitaxial Cd3As2 layers can be grown at low temperatures (110 °C–220 °C, in situ, on (111 GaSb buffer layers deposited on (111 GaAs substrates. The orientation relationship is described by ( 112 Cd 3 As 2 || (111 GaSb and [ 1 1 ¯ 0 ] Cd 3 As 2 || [ 1 ¯ 01 ] GaSb . The films are shown to grow in the low-temperature, vacancy ordered, tetragonal Dirac semimetal phase. They exhibit high room temperature mobilities of up to 19300 cm2/Vs, despite a three-dimensional surface morphology indicative of island growth and the presence of twin variants. The results indicate that epitaxial growth on more closely lattice matched buffer layers, such as InGaSb or InAlSb, which allow for imposing different degrees of epitaxial coherency strains, should be possible.

  9. Theory of high temperature superconductivity

    International Nuclear Information System (INIS)

    Srivastava, C.M.

    1989-01-01

    This paper develops a semi-empirical electronic band structure for a high T c superconductor like YBa 2 Cu 3 O 6 - δ . The author accounts for the electrical transport properties on the model based on the correlated electron transfer arising from the electron-phonon interaction. The momentum pairing leading to the superconducting phase amongst the mobile charge carriers is shown

  10. High temperature resistant cermet and ceramic compositions

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1978-01-01

    Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

  11. High Temperature Electrostrictive Ceramics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — TRS Technologies proposes to develop high temperature electrostrictors from bismuth-based ferroelectrics. These materials will exhibit high strain and low loss in...

  12. High temperature solar selective coatings

    Science.gov (United States)

    Kennedy, Cheryl E

    2014-11-25

    Improved solar collectors (40) comprising glass tubing (42) attached to bellows (44) by airtight seals (56) enclose solar absorber tubes (50) inside an annular evacuated space (54. The exterior surfaces of the solar absorber tubes (50) are coated with improved solar selective coatings {48} which provide higher absorbance, lower emittance and resistance to atmospheric oxidation at elevated temperatures. The coatings are multilayered structures comprising solar absorbent layers (26) applied to the meta surface of the absorber tubes (50), typically stainless steel, topped with antireflective Savers (28) comprising at least two layers 30, 32) of refractory metal or metalloid oxides (such as titania and silica) with substantially differing indices of refraction in adjacent layers. Optionally, at least one layer of a noble metal such as platinum can be included between some of the layers. The absorbent layers cars include cermet materials comprising particles of metal compounds is a matrix, which can contain oxides of refractory metals or metalloids such as silicon. Reflective layers within the coating layers can comprise refractory metal silicides and related compounds characterized by the formulas TiSi. Ti.sub.3SiC.sub.2, TiAlSi, TiAN and similar compounds for Zr and Hf. The titania can be characterized by the formulas TiO.sub.2, Ti.sub.3O.sub.5. TiOx or TiO.sub.xN.sub.1-x with x 0 to 1. The silica can be at least one of SiO.sub.2, SiO.sub.2x or SiO.sub.2xN.sub.1-x with x=0 to 1.

  13. Epitaxial Al2O3 capacitors for low microwave loss superconducting quantum circuits

    Directory of Open Access Journals (Sweden)

    K.-H. Cho

    2013-10-01

    Full Text Available We have characterized the microwave loss of high-Q parallel plate capacitors fabricated from thin-film Al/Al2O3/Re heterostructures on (0001 Al2O3 substrates. The superconductor-insulator-superconductor trilayers were grown in situ in a hybrid deposition system: the epitaxial Re base and polycrystalline Al counterelectrode layers were grown by sputtering, while the epitaxial Al2O3 layer was grown by pulsed laser deposition. Structural analysis indicates a highly crystalline epitaxial Al2O3 layer and sharp interfaces. The measured intrinsic (low-power, low-temperature quality factor of the resonators is as high as 3 × 104. These results indicate that low-loss grown Al2O3 is an attractive candidate dielectric for high-fidelity superconducting qubit circuits.

  14. Recrystallization of high temperature superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Kouzoudis, Dimitris [Iowa State Univ., Ames, IA (United States)

    1996-05-09

    Currently one of the most widely used high Tc superconductors is the Bi-based compounds Bi2Sr2CaCu2Oz and Bi2Sr2Ca2Cu3Oz (known as BSCCO 2212 and 2223 compounds) with Tc values of about 85 K and 110 K respectively. Lengths of high performance conductors ranging from 100 to 1000 m long are routinely fabricated and some test magnets have been wound. An additional difficulty here is that although Bi-2212 and Bi-2223 phases exist over a wide range of stoichiometries, neither has been prepared in phase-pure form. So far the most successful method of constructing reliable and robust wires or tapes is the so called powder-in-tube (PIT) technique [1, 2, 3, 4, 5, 6, 7] in which oxide powder of the appropriate stoichiometry and phase content is placed inside a metal tube, deformed into the desired geometry (round wire or flat tape), and annealed to produce the desired superconducting properties. Intermediate anneals are often incorporated between successive deformation steps. Silver is the metal used in this process because it is the most compatible with the reacting phase. In all of the commercial processes for BSCCO, Ag seems to play a special catalytic role promoting the growth of high performance aligned grains that grow in the first few micrometers near the Ag/BSCCO interface. Adjacent to the Ag, the grain alignment is more perfect and the current density is higher than in the center of the tape. It is known that Ag lowers the melting point of several of the phases but the detailed mechanism for growth of these high performance grains is not clearly understood. The purpose of this work is to study the nucleation and growth of the high performance material at this interface.

  15. High performance devices enabled by epitaxial, preferentially oriented, nanodots and/or nanorods

    Science.gov (United States)

    Goyal, Amit [Knoxville, TN

    2011-10-11

    Novel articles and methods to fabricate same with self-assembled nanodots and/or nanorods of a single or multicomponent material within another single or multicomponent material for use in electrical, electronic, magnetic, electromagnetic, superconducting and electrooptical devices is disclosed. Self-assembled nanodots and/or nanorods are ordered arrays wherein ordering occurs due to strain minimization during growth of the materials. A simple method to accomplish this when depositing in-situ films is also disclosed. Device applications of resulting materials are in areas of superconductivity, photovoltaics, ferroelectrics, magnetoresistance, high density storage, solid state lighting, non-volatile memory, photoluminescence, thermoelectrics and in quantum dot lasers.

  16. Epitaxial Integration of Nanowires in Microsystems by Local Micrometer Scale Vapor Phase Epitaxy

    DEFF Research Database (Denmark)

    Mølhave, Kristian; Wacaser, Brent A.; Petersen, Dirch Hjorth

    2008-01-01

    deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating...... a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid...

  17. Application of High Temperature Superconductors to Accelerators

    CERN Document Server

    Ballarino, A

    2000-01-01

    Since the discovery of high temperature superconductivity, a large effort has been made by the scientific community to investigate this field towards a possible application of the new oxide superconductors to different devices like SMES, magnetic bearings, flywheels energy storage, magnetic shielding, transmission cables, fault current limiters, etc. However, all present day large scale applications using superconductivity in accelerator technology are based on conventional materials operating at liquid helium temperatures. Poor mechanical properties, low critical current density and sensitivity to the magnetic field at high temperature are the key parameters whose improvement is essential for a large scale application of high temperature superconductors to such devices. Current leads, used for transferring currents from the power converters, working at room temperature, into the liquid helium environment, where the magnets are operating, represent an immediate application of the emerging technology of high t...

  18. Ultra-high temperature direct propulsion

    International Nuclear Information System (INIS)

    Araj, K.J.; Slovik, G.; Powell, J.R.; Ludewig, H.

    1987-01-01

    Potential advantages of ultra-high exhaust temperature (3000 K - 4000 K) direct propulsion nuclear rockets are explored. Modifications to the Particle Bed Reactor (PBR) to achieve these temperatures are described. Benefits of ultra-high temperature propulsion are discussed for two missions - orbit transfer (ΔV = 5546 m/s) and interplanetary exploration (ΔV = 20000 m/s). For such missions ultra-high temperatures appear to be worth the additional complexity. Thrust levels are reduced substantially for a given power level, due to the higher enthalpy caused by partial disassociation of the hydrogen propellant. Though technically challenging, it appears potentially feasible to achieve such ultra high temperatures using the PBR

  19. Photovoltaic x-ray detectors based on the GaAs epitaxial structures

    CERN Document Server

    Akhmadullin, R A; Dvoryankina, G G; Dikaev, Y M; Ermakov, M G; Ermakova, O N; Krikunov, A I; Kudryashov, A A; Petrov, A G; Telegin, A A

    2002-01-01

    The new photovoltaic detector of the X-ray radiation is proposed on the basis of the GaAs epitaxial structures, which operates with high efficiency of the charge carriers collection without shift voltage and at the room temperature. The structures are grown by the method of the gas-phase epitaxy on the n sup + -type highly-alloyed substrates. The range of sensitivity to the X-ray radiation is within the range of effective energies from 8 up to 120 keV. The detector maximum response in the current short circuit mode is determined

  20. Atomic layer epitaxy of hematite on indium tin oxide for application in solar energy conversion

    Science.gov (United States)

    Martinson, Alex B.; Riha, Shannon; Guo, Peijun; Emery, Jonathan D.

    2016-07-12

    A method to provide an article of manufacture of iron oxide on indium tin oxide for solar energy conversion. An atomic layer epitaxy method is used to deposit an uncommon bixbytite-phase iron (III) oxide (.beta.-Fe.sub.2O.sub.3) which is deposited at low temperatures to provide 99% phase pure .beta.-Fe.sub.2O.sub.3 thin films on indium tin oxide. Subsequent annealing produces pure .alpha.-Fe.sub.2O.sub.3 with well-defined epitaxy via a topotactic transition. These highly crystalline films in the ultra thin film limit enable high efficiency photoelectrochemical chemical water splitting.

  1. Dynamic Model of High Temperature PEM Fuel Cell Stack Temperature

    DEFF Research Database (Denmark)

    Andreasen, Søren Juhl; Kær, Søren Knudsen

    2007-01-01

    cathode air cooled 30 cell HTPEM fuel cell stack developed at the Institute of Energy Technology at Aalborg University. This fuel cell stack uses PEMEAS Celtec P-1000 membranes, runs on pure hydrogen in a dead end anode configuration with a purge valve. The cooling of the stack is managed by running......The present work involves the development of a model for predicting the dynamic temperature of a high temperature PEM (HTPEM) fuel cell stack. The model is developed to test different thermal control strategies before implementing them in the actual system. The test system consists of a prototype...... the stack at a high stoichiometric air flow. This is possible because of the PBI fuel cell membranes used, and the very low pressure drop in the stack. The model consists of a discrete thermal model dividing the stack into three parts: inlet, middle and end and predicting the temperatures in these three...

  2. Growth of high-quality hexagonal InN on 3C-SiC (001) by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Yaguchi, Hiroyuki; Hijikata, Yasuto; Yoshida, Sadafumi; Kitamura, Yoshihiro; Nishida, Kenji; Iwahashi, Yohei

    2005-01-01

    We have grown hexagonal InN (h-InN) films on 3C-SiC (001) substrates by RF-N 2 plasma molecular beam epitaxy taking account of small lattice mismatch between h-InN (10-10) and 3C-SiC (110). It was found from X-ray diffraction (XRD) measurements that h-InN grows with h-InN (0001) vertical stroke vertical stroke 3C-SiC (001) and h-InN (1-100) vertical stroke vertical stroke 3C-SiC (110). XRD measurements also revealed that the h-InN epitaxial layers grown on 3C-SiC (001) are composed of single domain. Strong and sharp photoluminescence from the h-InN was clearly observed at around 0.69 eV. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Low-temperature liquid phase epitaxy of rare-earth-ion doped KY(WO4)2 thin layers

    NARCIS (Netherlands)

    Romanyuk, Y.E.; Utke, I.; Ehrentraut, D.; Pollnau, Markus; Garcia-Revilla, S.; Valiente, R.; Kuleshov, N.V.

    2004-01-01

    Rare-earth-ion doped KY(WO4)2 (hereafter KYW) is a promising material for novel solid-state lasers. Low laser threshold, high efficiency, high output powers, and third-order nonlinear effects have stimulated research towards miniaturized thin-film waveguide lasers and amplifiers for future photonic

  4. Laser energy tuning of carrier effective mass and thermopower in epitaxial oxide thin films

    KAUST Repository

    Abutaha, Anas I.; Sarath Kumar, S. R.; Alshareef, Husam N.

    2012-01-01

    The effect of the laser fluence on high temperature thermoelectric properties of the La doped SrTiO3 (SLTO) thin films epitaxially grown on LaAlO3 〈100〉 substrates by pulsed laser deposition is clarified. It is shown that oxygen vacancies

  5. Transparent Semiconductor-Superconductor Interface and Induced Gap in an Epitaxial Heterostructure Josephson Junction

    NARCIS (Netherlands)

    Kjaergaard, M.; Suominen, H. J.; Nowak, M.P.; Akhmerov, A.R.; Shabani, J.; Palmstrøm, C. J.; Nichele, F.; Marcus, C.M.

    2017-01-01

    Measurement of multiple Andreev Reflection (MAR) in a Josephson junction made from an InAs quantum well heterostructure with epitaxial aluminum is used to quantify a highly transparent effective semiconductor-superconductor interface with near-unity transmission. The observed temperature

  6. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    Energy Technology Data Exchange (ETDEWEB)

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  7. Sandia_HighTemperatureComponentEvaluation_2015

    Energy Technology Data Exchange (ETDEWEB)

    Cashion, Avery T. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2015-03-01

    The objective of this project is to perform independent evaluation of high temperature components to determine their suitability for use in high temperature geothermal tools. Development of high temperature components has been increasing rapidly due to demand from the high temperature oil and gas exploration and aerospace industries. Many of these new components are at the late prototype or first production stage of development and could benefit from third party evaluation of functionality and lifetime at elevated temperatures. In addition to independent testing of new components, this project recognizes that there is a paucity of commercial-off-the-shelf COTS components rated for geothermal temperatures. As such, high-temperature circuit designers often must dedicate considerable time and resources to determine if a component exists that they may be able to knead performance out of to meet their requirements. This project aids tool developers by characterization of select COTS component performances beyond published temperature specifications. The process for selecting components includes public announcements of project intent (e.g., FedBizOps), direct discussions with candidate manufacturers,and coordination with other DOE funded programs.

  8. Materials corrosion and protection at high temperatures

    International Nuclear Information System (INIS)

    Balbaud, F.; Desgranges, Clara; Martinelli, Laure; Rouillard, Fabien; Duhamel, Cecile; Marchetti, Loic; Perrin, Stephane; Molins, Regine; Chevalier, S.; Heintz, O.; David, N.; Fiorani, J.M.; Vilasi, M.; Wouters, Y.; Galerie, A.; Mangelinck, D.; Viguier, B.; Monceau, D.; Soustelle, M.; Pijolat, M.; Favergeon, J.; Brancherie, D.; Moulin, G.; Dawi, K.; Wolski, K.; Barnier, V.; Rebillat, F.; Lavigne, O.; Brossard, J.M.; Ropital, F.; Mougin, J.

    2011-01-01

    This book was made from the lectures given in 2010 at the thematic school on 'materials corrosion and protection at high temperatures'. It gathers the contributions from scientists and engineers coming from various communities and presents a state-of-the-art of the scientific and technological developments concerning the behaviour of materials at high temperature, in aggressive environments and in various domains (aerospace, nuclear, energy valorization, and chemical industries). It supplies pedagogical tools to grasp high temperature corrosion thanks to the understanding of oxidation mechanisms. It proposes some protection solutions for materials and structures. Content: 1 - corrosion costs; macro-economical and metallurgical approach; 2 - basic concepts of thermo-chemistry; 3 - introduction to the Calphad (calculation of phase diagrams) method; 4 - use of the thermodynamic tool: application to pack-cementation; 5 - elements of crystallography and of real solids description; 6 - diffusion in solids; 7 - notions of mechanics inside crystals; 8 - high temperature corrosion: phenomena, models, simulations; 9 - pseudo-stationary regime in heterogeneous kinetics; 10 - nucleation, growth and kinetic models; 11 - test experiments in heterogeneous kinetics; 12 - mechanical aspects of metal/oxide systems; 13 - coupling phenomena in high temperature oxidation; 14 - other corrosion types; 15 - methods of oxidized surfaces analysis at micro- and nano-scales; 16 - use of SIMS in the study of high temperature corrosion of metals and alloys; 17 - oxidation of ceramics and of ceramic matrix composite materials; 18 - protective coatings against corrosion and oxidation; 19 - high temperature corrosion in the 4. generation of nuclear reactor systems; 20 - heat exchangers corrosion in municipal waste energy valorization facilities; 21 - high temperature corrosion in oil refining and petrochemistry; 22 - high temperature corrosion in new energies industry. (J.S.)

  9. High temperature thermometric phosphors for use in a temperature sensor

    Science.gov (United States)

    Allison, Stephen W.; Cates, Michael R.; Boatner, Lynn A.; Gillies, George T.

    1998-01-01

    A high temperature phosphor consists essentially of a material having the general formula LuPO.sub.4 :Dy.sub.(x),Eu.sub.(y), wherein: 0.1 wt %.ltoreq.x.ltoreq.20 wt % and 0.1 wt %.ltoreq.y.ltoreq.20 wt %. The high temperature phosphor is in contact with an article whose temperature is to be determined. The article having the phosphor in contact with it is placed in the environment for which the temperature of the article is to be determined. The phosphor is excited by a laser causing the phosphor to fluoresce. The emission from the phosphor is optically focused into a beam-splitting mirror which separates the emission into two separate emissions, the emission caused by the dysprosium dopant and the emission caused by the europium dopent. The separated emissions are optically filtered and the intensities of the emission are detected and measured. The ratio of the intensity of each emission is determined and the temperature of the article is calculated from the ratio of the intensities of the separate emissions.

  10. Viscoelastic creep of high-temperature concrete

    International Nuclear Information System (INIS)

    Pfeiffer, P.A.; Marchertas, A.H.; Bazant, Z.P.

    1985-01-01

    Presented in this report is the analytical model for analysis of high temperature creep response of concrete. The creep law used is linear (viscoelastic), the temperature and moisture effects on the creep rate and also aging are included. Both constant and transient temperature as well as constant and transient moisture conditions are considered. Examples are presented to correlate experimental data with parameters of the analytical model by the use of a finite element scheme

  11. High temperature tests for graphite materials

    OpenAIRE

    Zhmurikov, Evgenij

    2015-01-01

    This study was performed within the framework of the EURISOL for facilities SPIRAL-II (GANIL, France) and SPES (LNL, Italy), and aims to investigate the anticipated strength properties of fine-grained graphite at elevated temperatures. It appears that the major parameters that affect to the lifetime of a graphite target of this IP are the temperature and heating time. High temperature tests were conducted to simulate the heating under the influence of a beam of heavy particles by passing thro...

  12. Symposium on high temperature and materials chemistry

    International Nuclear Information System (INIS)

    1989-10-01

    This volume contains the written proceedings of the Symposium on High Temperature and Materials Chemistry held in Berkeley, California on October 24--25, 1989. The Symposium was sponsored by the Materials and Chemical Sciences Division of Lawrence Berkeley Laboratory and by the College of Chemistry of the University of California at Berkeley to discuss directions, trends, and accomplishments in the field of high temperature and materials chemistry. Its purpose was to provide a snapshot of high temperature and materials chemistry and, in so doing, to define status and directions

  13. Symposium on high temperature and materials chemistry

    Energy Technology Data Exchange (ETDEWEB)

    1989-10-01

    This volume contains the written proceedings of the Symposium on High Temperature and Materials Chemistry held in Berkeley, California on October 24--25, 1989. The Symposium was sponsored by the Materials and Chemical Sciences Division of Lawrence Berkeley Laboratory and by the College of Chemistry of the University of California at Berkeley to discuss directions, trends, and accomplishments in the field of high temperature and materials chemistry. Its purpose was to provide a snapshot of high temperature and materials chemistry and, in so doing, to define status and directions.

  14. High-temperature materials and structural ceramics

    International Nuclear Information System (INIS)

    1990-01-01

    This report gives a survey of research work in the area of high-temperature materials and structural ceramics of the KFA (Juelich Nuclear Research Center). The following topics are treated: (1) For energy facilities: ODS materials for gas turbine blades and heat exchangers; assessment of the remaining life of main steam pipes, material characterization and material stress limits for First-Wall components; metallic and graphitic materials for high-temperature reactors. (2) For process engineering plants: composites for reformer tubes and cracking tubes; ceramic/ceramic joints and metal/ceramic and metal/metal joints; Composites and alloys for rolling bearing and sliding systems up to application temperatures of 1000deg C; high-temperature corrosion of metal and ceramic material; porous ceramic high-temperature filters and moulding coat-mix techniques; electrically conducting ceramic material (superconductors, fuel cells, solid electrolytes); high-temperature light sources (high-temperature chemistry); oil vapor engines with caramic components; ODS materials for components in diesel engines and vehicle gas turbines. (MM) [de

  15. On high temperature strength of carbon steels

    International Nuclear Information System (INIS)

    Ichinose, Hiroyuki; Tamura, Manabu; Kanero, Takahiro; Ihara, Yoshihito

    1977-01-01

    In the steels for high temperature use, the oxidation resistance is regarded as important, but carbon steels show enough oxidation resistance to be used continuously at the temperature up to 500 deg. C if the strength is left out of consideration, and up to 450 deg. C even when the strength is taken into account. Moreover, the production is easy, the workability and weldability are good, and the price is cheap in carbon steels as compared with alloy steels. In the boilers for large thermal power stations, 0.15-0.30% C steels are used for reheater tubes, main feed water tubes, steam headers, wall water tubes, economizer tubes, bypass pipings and others, and they account for 70% of all steel materials used for the boilers of 350 MW class and 30% in 1000 MW class. The JIS standard for the carbon steels for high temperature use and the related standards in foreign countries are shown. The high temperature strength of carbon steels changes according to the trace elements, melting and heat treatment as well as the main compositions of C, Si and Mn. Al and N affect the high temperature strength largely. The characteristics of carbon steels after the heating for hours, the factors controlling the microstructure and high temperature strength, and the measures to improve the high temperature strength of carbon steels are explained. (Kako, I.)

  16. Curie temperature, exchange integrals, and magneto-optical properties in off-stoichiometric bismuth iron garnet epitaxial films

    Science.gov (United States)

    Vertruyen, B.; Cloots, R.; Abell, J. S.; Jackson, T. J.; da Silva, R. C.; Popova, E.; Keller, N.

    2008-09-01

    We have studied the influence of the stoichiometry on the structural, magnetic, and magneto-optical properties of bismuth iron garnet (Bi3Fe5O12) thin films grown by pulsed laser deposition. Films with different stoichiometries have been obtained by varying the Bi/Fe ratio of the target and the oxygen pressure during deposition. Stoichiometry variations influence the Curie temperature TC by tuning the (Fe)-O-[Fe] geometry: TC increases when the lattice parameter decreases, contrary to what happens in the case of stoichiometric rare-earth iron garnets. The thermal variation of the magnetization, the Faraday rotation, and the Faraday ellipticity have been analyzed in the frame of the Néel two-sublattice magnetization model giving energies of -48K (4.1 meV), -29K (2.5 meV), and 84 K (7.3 meV) for the three magnetic exchange integrals jaa , jdd , and jad , respectively. Magneto-optical spectroscopy linked to compositional analysis by Rutherford backscattering spectroscopy shows that Bi and/or Fe deficiencies also affect the spectral variation (between 1.77 and 3.1 eV). Our results suggest that bismuth deficiency has an effect on the magneto-optical response of the tetrahedral Fe sublattice, whereas small iron deficiencies affect predominantly the magneto-optical response of the octahedral sublattice.

  17. High temperature brazing of reactor materials

    International Nuclear Information System (INIS)

    Orlov, A.V.; Nechaev, V.A.; Rybkin, B.V.; Ponimash, I.D.

    1990-01-01

    Application of high-temperature brazing for joining products of such materials as molybdenum, tungsten, zirconium, beryllium, magnesium, nickel and aluminium alloys, graphite ceramics etc. is described. Brazing materials composition and brazed joints properties are presented. A satisfactory strength of brazed joints is detected under reactor operation temperatures and coolant and irradiation effect

  18. Technology development for high temperature logging tools

    Energy Technology Data Exchange (ETDEWEB)

    Veneruso, A.F.; Coquat, J.A.

    1979-01-01

    A set of prototype, high temperature logging tools (temperature, pressure and flow) were tested successfully to temperatures up to 275/sup 0/C in a Union geothermal well during November 1978 as part of the Geothermal Logging Instrumentation Development Program. This program is being conducted by Sandia Laboratories for the Department of Energy's Division of Geothermal Energy. The progress and plans of this industry based program to develop and apply the high temperature instrumentation technology needed to make reliable geothermal borehole measurements are described. Specifically, this program is upgrading existing sondes for improved high temperature performance, as well as applying new materials (elastomers, polymers, metals and ceramics) and developing component technology such as high temperature cables, cableheads and electronics to make borehole measurements such as formation temperature, flow rate, high resolution pressure and fracture mapping. In order to satisfy critical existing needs, the near term goal is for operation up to 275/sup 0/C and 7000 psi by the end of FY80. The long term goal is for operation up to 350/sup 0/C and 20,000 psi by the end of FY84.

  19. Hydride vapor phase epitaxy of high structural perfection thick AlN layers on off-axis 6H-SiC

    Science.gov (United States)

    Volkova, Anna; Ivantsov, Vladimir; Leung, Larry

    2011-01-01

    The employment of more than 10 μm thick AlN epilayers on SiC substrates for AlGaN/GaN high-electron-mobility transistors (HEMTs) substantially raises their performance in high-power energy-efficient amplifiers for 4G wireless mobile stations. In this paper, structural properties and surface morphology of thick AlN epilayers deposited by hydride vapor phase epitaxy (HVPE) on off-axis conductive 6H-SiC substrates are reported. The epilayers were examined in detail by high-resolution X-ray diffraction (XRD), atomic force microscopy (AFM), Nomarski differential interference contrast (DIC), scanning electron microscopy (SEM), and selective wet chemical etching. At optimal substrate preparation and growth conditions, a full width at half-maximum (FWHM) of the XRD rocking curve (RC) for the symmetric (00.2) reflex was very close to that of the substrate (less than 40 arcsec) suggesting low screw dislocation density in the epilayer (˜10 6 cm -2) and small in-plane tilt misorientation. Reciprocal space mapping around asymmetric reflexes and measured lattice parameters indicated a fully relaxed state of the epilayers. The unit-cell-high stepped areas of the epilayers with 0.5 nm root mean square (RMS) roughness over 1×1 μm 2 scan were alternated with step-bunching instabilities up to 350 nm in height. Low warp of the substrates makes them suitable for precise epitaxy of HEMT structures.

  20. High Temperature Superconductor Bolometers for Planetary Science

    Data.gov (United States)

    National Aeronautics and Space Administration — This work is a design study of an instrument optimized for JPL's novel high temperature superconductor bolometers. The work involves designing an imaging...

  1. Some theories of high temperature superconductivity

    International Nuclear Information System (INIS)

    Cohen, M.L.

    1990-01-01

    In this paper a brief review is given of some historical aspects of theoretical research on superconductivity including a discussion of BCS theory and some theoretical proposals for mechanisms which can cause superconductivity at high temperatures

  2. Panel report on high temperature ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Nolet, T C [ed.

    1979-01-01

    Fundamental research is reported concerning high temperature ceramics for application in turbines, engines, batteries, gasifiers, MHD, fuel cells, heat exchangers, and hot wall combustors. Ceramics microstructure and behavior are included. (FS)

  3. Novel High Temperature Strain Gauge, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Advanced high-temperature sensor technology and bonding methods are of great interests in designing and developing advanced future aircraft. Current state-of-the-art...

  4. High temperature superconductors and other superfluids

    CERN Document Server

    Alexandrov, A S

    2017-01-01

    Written by eminent researchers in the field, this text describes the theory of superconductivity and superfluidity starting from liquid helium and a charged Bose-gas. It also discusses the modern bipolaron theory of strongly coupled superconductors, which explains the basic physical properties of high-temperature superconductors. This book will be of interest to fourth year graduate and postgraduate students, specialist libraries, information centres and chemists working in high-temperature superconductivity.

  5. PLA recycling by hydrolysis at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Cristina, Annesini Maria; Rosaria, Augelletti; Sara, Frattari, E-mail: sara.frattari@uniroma1.it; Fausto, Gironi [Department of Chemical Engineering Materials Environment, University of Rome “La Sapienza”, Via Eudossiana 18– 00184 Roma (Italy)

    2016-05-18

    In this work the process of PLA hydrolysis at high temperature was studied, in order to evaluate the possibility of chemical recycling of this polymer bio-based. In particular, the possibility to obtain the monomer of lactic acid from PLA degradation was investigated. The results of some preliminary tests, performed in a laboratory batch reactor at high temperature, are presented: the experimental results show that the complete degradation of PLA can be obtained in relatively low reaction times.

  6. Flux creep characteristics in high-temperature superconductors

    International Nuclear Information System (INIS)

    Zeldov, E.; Amer, N.M.; Koren, G.; Gupta, A.; McElfresh, M.W.; Gambino, R.J.

    1990-01-01

    We describe the voltage-current characteristics of YBa 2 Cu 3 O 7-δ epitaxial films within the flux creep model in a manner consistent with the resistive transition behavior. The magnitude of the activation energy, and its temperature and magnetic field dependences, are readily derived from the experimentally observed power law characteristics and show a (1-T/T c ) 3/2 type of behavior near T c . The activation energy is a nonlinear function of the current density and it enables the determination of the shape of the flux line potential well

  7. Graphene nanoribbons epitaxy on boron nitride

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Xiaobo; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Yang, Rong; Shi, Dongxia [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Yang, Wei [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Laboratoire Pierre Aigrain, ENS-CNRS UMR 8551, Universités Pierre et Marie Curie and Paris-Diderot, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Watanabe, Kenji; Taniguchi, Takashi [National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044 (Japan); Zhang, Guangyu, E-mail: gyzhang@aphy.iphy.ac.cn [Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China); Collaborative Innovation Center of Quantum Matter, Beijing 100190 (China)

    2016-03-14

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm{sup 2} V{sup −1} s{sup −1} for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  8. Close-Spaced High Temperature Knudsen Flow.

    Science.gov (United States)

    1986-07-15

    radiant heat source assembly was substituted for the brazed molybdenum one in order to achieve higher radiant heater temperatures . 2.1.4 Experimental...at very high temperature , and ground flat. The molybdenum is then chemically etched to the desired depth using an etchant which does not affect...RiB6 295 -CLSE PCED HIGH TEMPERATURE KNUDSEN FLOU(U) RASOR I AiASSOCIATES INC SUNNYVALE CA J 8 MCVEY 15 JUL 86 NSR-224 AFOSR-TR-87-1258 F49628-83-C

  9. Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

    Science.gov (United States)

    Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

    2018-03-01

    Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

  10. High power ultraviolet light emitting diodes based on GaN/AlGaN quantum wells produced by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

    2006-01-01

    In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350 nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN/AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN/AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800x800 μm 2 ) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340 nm, the measured differential on-series resistance is 3 Ω with electroluminescence spectrum full width at half maximum of 18 nm. The output power under dc bias saturates at 0.5 mW, while under pulsed operation it saturates at approximately 700 mA to a value of 3 mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350 nm were investigated under dc operation and the output power saturates at 4.5 mW under 200 mA drive current

  11. Microstructure and property correlations in high-temperature superconductors

    Science.gov (United States)

    Kalyanaraman, Ramakrishnan

    1998-11-01

    The work in this dissertation is intended at developing high quality device gradefilms of the high temperature (high-Tsbc) superconductor, Yttrium Barium Copper Oxide (YBCO), on MgO(001) substrates. Three approaches have been used to achieve the above goal, (i) The use of a SrTiOsb3 buffer layer, (ii) The use of Ag to enhance the growth of YBCO films and (iii) Investigation of the atomic structure-property correlations of low-angle grain boundaries in these films. Thin film heterostructures of YBCO/MgO and YBCO/SrTiOsb3/MgO were fabricated by pulsed laser deposition (PLD), using a 248 nm KrF excimer laser. Analysis of the structure and measurement of superconducting properties of the films were carried out to optimize the suitable conditions under each approach. The key findings were, (i) Single crystal-like SrTiOsb3 buffer layers can be grown and they give the highest JsbcYBCO films, (ii) An in-depth study of the role of Ag showed that it enhanced film growth of YBCO thereby improving its quality, and (iii) Low-angle boundaries in YBCO/MgO occur with two probable habit planes and the Jsbcs across them differ slightly. A systematic investigation of the crystalline quality of the SrTiOsb3 films deposited by PLD was performed as a function of oxygen partial pressure (pOsb2) and substrate temperature (Tsbc). The highest quality films were grown in the pOsb2 range of 0.1-1 mTorr at 750sp°C. The films had as-deposited x-ray diffraction rocking curve (omega) values of {˜}0.70sp° and Rutherford backscattering channeling yields (chisbmin) of 5% as compared to omega˜1.40sp° and chisbmin˜14% for the film deposited in 100 mTorr of pOsb2. The x-ray phi-scans showed epitaxial cube-on-cube alignment of the SrTiOsb3 films on MgO(001) substrates. Thermal annealing of the SrTiOsb3 films further improved the quality, and the 1 mTorr films gave omega{˜}0.13sp° and chisbmin˜2.0%. Transmission electron microscopy investigations (TEM) of these films showed that the defects in

  12. Melt processed high-temperature superconductors

    CERN Document Server

    1993-01-01

    The achievement of large critical currents is critical to the applications of high-temperature superconductors. Recent developments have shown that melt processing is suitable for producing high J c oxide superconductors. Using magnetic forces between such high J c oxide superconductors and magnets, a person could be levitated.This book has grown largely out of research works on melt processing of high-temperature superconductors conducted at ISTEC Superconductivity Research Laboratory. The chapters build on melt processing, microstructural characterization, fundamentals of flux pinning, criti

  13. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    International Nuclear Information System (INIS)

    Krockenberger, Y.

    2006-01-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  14. Epitaxial thin film growth and properties of unconventional oxide superconductors. Cuprates and cobaltates

    Energy Technology Data Exchange (ETDEWEB)

    Krockenberger, Y.

    2006-07-01

    The discovery of high-temperature superconductors has strongly driven the development of suited thin film fabrication methods of complex oxides. One way is the adaptation of molecular beam epitaxy (MBE) for the growth of oxide materials. Another approach is the use of pulsed laser deposition (PLD) which has the advantage of good stoichiometry transfer from target to the substrate. Both techniques are used within this thesis. Epitaxial thin films of new materials are of course needed for future applications. In addition, the controlled synthesis of thin film matter which can be formed far away from thermal equilibrium allows for the investigation of fundamental physical materials properties. (orig.)

  15. High Temperature, Wireless Seismometer Sensor for Venus

    Science.gov (United States)

    Ponchak, George E.; Scardelletti, Maximilian C.; Taylor, Brandt; Beard, Steve; Meredith, Roger D.; Beheim, Glenn M.; Hunter Gary W.; Kiefer, Walter S.

    2012-01-01

    Space agency mission plans state the need to measure the seismic activity on Venus. Because of the high temperature on Venus (462? C average surface temperature) and the difficulty in placing and wiring multiple sensors using robots, a high temperature, wireless sensor using a wide bandgap semiconductor is an attractive option. This paper presents the description and proof of concept measurements of a high temperature, wireless seismometer sensor for Venus. A variation in inductance of a coil caused by the movement of an aluminum probe held in the coil and attached to a balanced leaf-spring seismometer causes a variation of 700 Hz in the transmitted signal from the oscillator/sensor system at 426? C. This result indicates that the concept may be used on Venus.

  16. High temperature microscope (1961); Microscopie a haute temperature (1961)

    Energy Technology Data Exchange (ETDEWEB)

    Rousseau, P [Commissariat a l' Energie Atomique, Saclay (France). Centre d' Etudes Nucleaires

    1961-06-15

    The purpose of this work is the realization of an apparatus for observation of radioactive metallic samples at high temperature and low pressure. The operating conditions are as follows: to limit oxidation of the metal, pressure of about 10{sup -6} mm of Hg is maintained in the furnace. In case the oxidation of the sample would be too important, on ultra vacuum. device could be used; working temperatures range between room temperature and 1200 deg. C; furnace temperature is regulated; observation is done ever in polarized light or interference contrast; to insure protection of the operator, the apparatus is placed in a glove-box. With that apparatus, we have observed the {alpha}{yields}{beta}, {beta}{yields}{gamma} transformations of uranium. A movie has been done. (author) [French] Le but de ce travail est la realisation d'une appareillage permettant l'observation a chaud et sous vide d'echantillons metalliques radioactifs. Cet appareillage fonctionne dans les conditions suivantes: l'echantillon est chauffe sous une pression de l'ordre de 10{sup -6} mm de mercure afin de limiter l'oxydation du materiau examine. L'utilisation eventuelle d'un groupe de pompage pour ultra vide est prevue; l'echantillon peut etre porte a une temperature comprise entre quelques degres et 1200 deg. C; la temperature du four est regulee; l'observation s'effectue soit en lumiere polarisee soit en contraste interferentiel; l'appareil est dipose dans une boite a gants afin d'assurer la protection de l'operateur contre les poussieres radioactives; Les transformations {alpha}{yields}{beta}, {beta}{yields}{gamma} de l'uranium ont ete observees. Un film a ete realise. (auteur)

  17. High-temperature granulites and supercontinents

    Directory of Open Access Journals (Sweden)

    J.L.R. Touret

    2016-01-01

    Full Text Available The formation of continents involves a combination of magmatic and metamorphic processes. These processes become indistinguishable at the crust-mantle interface, where the pressure-temperature (P-T conditions of (ultra high-temperature granulites and magmatic rocks are similar. Continents grow laterally, by magmatic activity above oceanic subduction zones (high-pressure metamorphic setting, and vertically by accumulation of mantle-derived magmas at the base of the crust (high-temperature metamorphic setting. Both events are separated from each other in time; the vertical accretion postdating lateral growth by several tens of millions of years. Fluid inclusion data indicate that during the high-temperature metamorphic episode the granulite lower crust is invaded by large amounts of low H2O-activity fluids including high-density CO2 and concentrated saline solutions (brines. These fluids are expelled from the lower crust to higher crustal levels at the end of the high-grade metamorphic event. The final amalgamation of supercontinents corresponds to episodes of ultra-high temperature metamorphism involving large-scale accumulation of these low-water activity fluids in the lower crust. This accumulation causes tectonic instability, which together with the heat input from the sub-continental lithospheric mantle, leads to the disruption of supercontinents. Thus, the fragmentation of a supercontinent is already programmed at the time of its amalgamation.

  18. Quantum Hall effect in epitaxial graphene with permanent magnets.

    Science.gov (United States)

    Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

    2016-12-06

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  19. Quantum Hall effect in epitaxial graphene with permanent magnets

    Science.gov (United States)

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-12-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  20. On the kinetic barriers of graphene homo-epitaxy

    International Nuclear Information System (INIS)

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-01-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size

  1. High-entropy alloys as high-temperature thermoelectric materials

    Energy Technology Data Exchange (ETDEWEB)

    Shafeie, Samrand [Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Department of Chemistry and Chemical Engineering, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Guo, Sheng, E-mail: sheng.guo@chalmers.se [Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Hu, Qiang [Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang 330029 (China); Fahlquist, Henrik [Bruker AXS Nordic AB, 17067 Solna (Sweden); Erhart, Paul [Department of Applied Physics, Chalmers University of Technology, SE-41296 Gothenburg (Sweden); Palmqvist, Anders, E-mail: anders.palmqvist@chalmers.se [Department of Chemistry and Chemical Engineering, Chalmers University of Technology, SE-41296 Gothenburg (Sweden)

    2015-11-14

    Thermoelectric (TE) generators that efficiently recycle a large portion of waste heat will be an important complementary energy technology in the future. While many efficient TE materials exist in the lower temperature region, few are efficient at high temperatures. Here, we present the high temperature properties of high-entropy alloys (HEAs), as a potential new class of high temperature TE materials. We show that their TE properties can be controlled significantly by changing the valence electron concentration (VEC) of the system with appropriate substitutional elements. Both the electrical and thermal transport properties in this system were found to decrease with a lower VEC number. Overall, the large microstructural complexity and lower average VEC in these types of alloys can potentially be used to lower both the total and the lattice thermal conductivity. These findings highlight the possibility to exploit HEAs as a new class of future high temperature TE materials.

  2. Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

    Science.gov (United States)

    Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

    2008-10-01

    The free hole carriers in GaN have been limited to concentrations in the low 1018cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ˜10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ˜1.5×1019cm-3.

  3. Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

    International Nuclear Information System (INIS)

    Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

    2008-01-01

    The free hole carriers in GaN have been limited to concentrations in the low 10 18 cm -3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ∼10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ∼1.5x10 19 cm -3

  4. High-temperature superconducting conductors and cables

    International Nuclear Information System (INIS)

    Peterson, D.E.; Maley, M.P.; Boulaevskii, L.; Willis, J.O.; Coulter, J.Y.; Ullmann, J.L.; Cho, Jin; Fleshler, S.

    1996-01-01

    This is the final report of a 3-year LDRD project at LANL. High-temperature superconductivity (HTS) promises more efficient and powerful electrical devices such as motors, generators, and power transmission cables; however this depends on developing HTS conductors that sustain high current densities J c in high magnetic fields at temperatures near liq. N2's bp. Our early work concentrated on Cu oxides but at present, long wire and tape conductors can be best made from BSCCO compounds with high J c at low temperatures, but which are degraded severely at temperatures of interest. This problem is associated with thermally activated motion of magnetic flux lines in BSCCO. Reducing these dc losses at higher temperatures will require a high density of microscopic defects that will pin flux lines and inhibit their motion. Recently it was shown that optimum defects can be produced by small tracks formed by passage of energetic heavy ions. Such defects result when Bi is bombarded with high energy protons. The longer range of protons in matter suggests the possibility of application to tape conductors. AC losses are a major limitation in many applications of superconductivity such as power transmission. The improved pinning of flux lines reduces ac losses, but optimization also involves other factors. Measuring and characterizing these losses with respect to material parameters and conductor design is essential to successful development of ac devices

  5. High-fluence hyperthermal ion irradiation of gallium nitride surfaces at elevated temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Finzel, A.; Gerlach, J.W., E-mail: juergen.gerlach@iom-leipzig.de; Lorbeer, J.; Frost, F.; Rauschenbach, B.

    2014-10-30

    Highlights: • Irradiation of gallium nitride films with hyperthermal nitrogen ions. • Surface roughening at elevated sample temperatures was observed. • No thermal decomposition of gallium nitride films during irradiation. • Asymmetric surface diffusion processes cause local roughening. - Abstract: Wurtzitic GaN films deposited on 6H-SiC(0001) substrates by ion-beam assisted molecular-beam epitaxy were irradiated with hyperthermal nitrogen ions with different fluences at different substrate temperatures. In situ observations with reflection high energy electron diffraction showed that during the irradiation process the surface structure of the GaN films changed from two dimensional to three dimensional at elevated temperatures, but not at room temperature. Atomic force microscopy revealed an enhancement of nanometric holes and canyons upon the ion irradiation at higher temperatures. The roughness of the irradiated and heated GaN films was clearly increased by the ion irradiation in accordance with x-ray reflectivity measurements. A sole thermal decomposition of the films at the chosen temperatures could be excluded. The results are discussed taking into account temperature dependent sputtering and surface uphill adatom diffusion as a function of temperature.

  6. Pumping requirements and options for molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

    International Nuclear Information System (INIS)

    McCollum, M.J.; Plano, M.A.; Haase, M.A.; Robbins, V.M.; Jackson, S.L.; Cheng, K.Y.; Stillman, G.E.

    1989-01-01

    This paper discusses the use of gas sources in growth by MBE as a result of current interest in growth of InP/InGaAsP/InGaAs lattice matched to InP. For gas flows greater than a few sccm, pumping speed requirements dictate the use of turbomolecular or diffusion pumps. GaAs samples with high p-type mobilities have been grown with diffusion pumped molecular beam epitaxial system. According to the authors, this demonstration of the inherent cleanliness of a properly designed diffusion pumping system indicates that a diffusion pump is an excellent inexpensive and reliable choice for growth by molecular beam epitaxy and gas source molecular beam epitaxy/chemical beam epitaxy

  7. High-temperature bulk acoustic wave sensors

    International Nuclear Information System (INIS)

    Fritze, Holger

    2011-01-01

    Piezoelectric crystals like langasite (La 3 Ga 5 SiO 14 , LGS) and gallium orthophosphate (GaPO 4 ) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 °C and 900 °C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low- and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the

  8. High-temperature bulk acoustic wave sensors

    Science.gov (United States)

    Fritze, Holger

    2011-01-01

    Piezoelectric crystals like langasite (La3Ga5SiO14, LGS) and gallium orthophosphate (GaPO4) exhibit piezoelectrically excited bulk acoustic waves at temperatures of up to at least 1450 °C and 900 °C, respectively. Consequently, resonant sensors based on those materials enable new sensing approaches. Thereby, resonant high-temperature microbalances are of particular interest. They correlate very small mass changes during film deposition onto resonators or gas composition-dependent stoichiometry changes of thin films already deposited onto the resonators with the resonance frequency shift of such devices. Consequently, the objective of the work is to review the high-temperature properties, the operation limits and the measurement principles of such resonators. The electromechanical properties of high-temperature bulk acoustic wave resonators such as mechanical stiffness, piezoelectric and dielectric constant, effective viscosity and electrical conductivity are described using a one-dimensional physical model and determined accurately up to temperatures as close as possible to their ultimate limit. Insights from defect chemical models are correlated with the electromechanical properties of the resonators. Thereby, crucial properties for stable operation as a sensor under harsh conditions are identified to be the formation of oxygen vacancies and the bulk conductivity. Operation limits concerning temperature, oxygen partial pressure and water vapor pressure are given. Further, application-relevant aspects such as temperature coefficients, temperature compensation and mass sensitivity are evaluated. In addition, approximations are introduced which make the exact model handy for routine data evaluation. An equivalent electrical circuit for high-temperature resonator devices is derived based on the one-dimensional physical model. Low- and high-temperature approximations are introduced. Thereby, the structure of the equivalent circuit corresponds to the Butterworth

  9. Ion filter for high temperature cleaning

    International Nuclear Information System (INIS)

    Kutomi, Yasuhiro; Nakamori, Masaharu.

    1994-01-01

    A porous ceramic pipe mainly comprising alumina is used as a base pipe, and then crud and radioactive ion adsorbing materials in high temperature and high pressure water mainly comprising a FeTiO 3 compound are flame-coated on the outer surface thereof to a film thickness of about 100 to 300μ m as an aimed value by an acetylene flame-coating method. The flame-coated FeTiO 3 layer is also porous, so that high temperature and high pressure water to be cleaned can pass through from the inside to the outside of the pipe. Cruds can be removed and radioactive ions can be adsorbed during passage. Since all the operations can be conducted at high temperature and high pressure state, cooling is no more necessary for the high temperature and high pressure water to be cleaned, heat efficiency of the plant can be improved and a cooling facility can be saved. Further, since the flame-coating of FeTiO 3 to the porous ceramic pipe can be conducted extremely easily compared with production of a sintering product, cost for the production of filter elements can be saved remarkably. (T.M.)

  10. High temperature phase transitions without infrared divergences

    International Nuclear Information System (INIS)

    Tetradis, N.; Wetterich, C.

    1993-09-01

    The most commonly used method for the study of high temperature phase transitions is based on the perturbative evaluation of the temperature dependent effective potential. This method becomes unreliable in the case of a second order or weakly first order phase transition, due to the appearance of infrared divergences. These divergences can be controlled through the method of the effective average action which employs renormalization group ideas. We report on the study of the high temperature phase transition for the N-component φ 4 theory. A detailed quantitative picture of the second order phase transition is presented, including the critical exponents for the behaviour in the vicinity of the critical temperature. An independent check of the results is obtained in the large N limit, and contact with the perturbative approach is established through the study of the Schwinger-Dyson equations. (orig.)

  11. High temperature estimation through computer vision

    International Nuclear Information System (INIS)

    Segovia de los R, J.A.

    1996-01-01

    The form recognition process has between his purposes to conceive and to analyze the classification algorithms applied to the image representations, sounds or signals of any kind. In a process with a thermal plasma reactor in which cannot be employed conventional dispositives or methods for the measurement of the very high temperatures. The goal of this work was to determine these temperatures in an indirect way. (Author)

  12. Applications of high-temperature superconductivity

    International Nuclear Information System (INIS)

    Malozemoff, A.P.; Gallagher, W.J.; Schwall, R.E.

    1987-01-01

    The new high temperature superconductors open up possibilities for applications in magnets, power transmission, computer interconnections, Josephson devices and instrumentation, among many others. The success of these applications hinges on many interlocking factors, including critical current density, critical fields, allowable processing temperatures, mechanical properties and chemical stability. An analysis of some of these factors suggests which applications may be the easiest to realize and which may have the greatest potential

  13. Modeling of concrete response at high temperature

    International Nuclear Information System (INIS)

    Pfeiffer, P.; Marchertas, A.

    1984-01-01

    A rate-type creep law is implemented into the computer code TEMP-STRESS for high temperature concrete analysis. The disposition of temperature, pore pressure and moisture for the particular structure in question is provided as input for the thermo-mechanical code. The loss of moisture from concrete also induces material shrinkage which is accounted for in the analytical model. Examples are given to illustrate the numerical results

  14. Raman spectroscopy in high temperature chemistry

    International Nuclear Information System (INIS)

    Drake, M.C.; Rosenblatt, G.M.

    1979-01-01

    Raman spectroscopy (largely because of advances in laser and detector technology) is assuming a rapidly expanding role in many areas of research. This paper reviews the contribution of Raman spectroscopy in high temperature chemistry including molecular spectroscopy on static systems and gas diagnostic measurements on reactive systems. An important aspect of high temperature chemistry has been the identification and study of the new, and often unusual, gaseous molecules which form at high temperatures. Particularly important is the investigation of vibrational-rotational energy levels and electronic states which determine thermodynamic properties and describe chemical bonding. Some advantages and disadvantages of high temperature Raman spectrosocpy for molecular studies on static systems are compared: (1) Raman vs infrared; (2) gas-phase vs condensed in matries; and (3) atmospheric pressure Raman vs low pressure techniques, including mass spectroscopy, matrix isolation, and molecular beams. Raman studies on molecular properties of gases, melts, and surfaces are presented with emphasis on work not covered in previous reviews of high temperature and matrix isolation Raman spectroscopy

  15. Raman spectroscopy in high temperature chemistry

    International Nuclear Information System (INIS)

    Drake, M.C.; Rosenblatt, G.M.

    1979-01-01

    Raman spectroscopy (largely because of advances in laser and detector technology) is assuming a rapidly expanding role in many areas of research. This paper reviews the contribution of Raman spectroscopy in high temperature chemistry including molecular spectroscopy on static systems and gas diagnostic measurements on reactive systems. An important aspect of high temperature chemistry has been the identification and study of the new, and often unusual, gaseous molecules which form at high temperatures. Particularly important is the investigation of vibrational-rotational energy levels and electronic states which determine thermodynamic properties and describe chemical bonding. Some advantages and disadvantages of high temperature Raman spectrosocpy for molecular studies on static systems are compared: (1) Raman vs infrared; (2) gas-phase vs condensed in matrices; and (3) atmospheric pressure Raman vs low pressure techniques, including mass spectroscopy, matrix isolation, and molecular beams. Raman studies on molecular properties of gases, melts, and surfaces are presented with emphasis on work not covered in previous reviews of high temperature and matrix isolation Raman spectroscopy

  16. Charged particle detection performances of CMOS pixel sensors produced in a 0.18 μm process with a high resistivity epitaxial layer

    Science.gov (United States)

    Senyukov, S.; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

    2013-12-01

    The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50 μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35 μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz 0.18 μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 1013neq /cm2 was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz 0.18 μm CMOS process for the ALICE ITS upgrade.

  17. Charged particle detection performances of CMOS pixel sensors produced in a 0.18μm process with a high resistivity epitaxial layer

    Energy Technology Data Exchange (ETDEWEB)

    Senyukov, S., E-mail: serhiy.senyukov@cern.ch; Baudot, J.; Besson, A.; Claus, G.; Cousin, L.; Dorokhov, A.; Dulinski, W.; Goffe, M.; Hu-Guo, C.; Winter, M.

    2013-12-01

    The apparatus of the ALICE experiment at CERN will be upgraded in 2017/18 during the second long shutdown of the LHC (LS2). A major motivation for this upgrade is to extend the physics reach for charmed and beauty particles down to low transverse momenta. This requires a substantial improvement of the spatial resolution and the data rate capability of the ALICE Inner Tracking System (ITS). To achieve this goal, the new ITS will be equipped with 50μm thin CMOS Pixel Sensors (CPS) covering either the three innermost layers or all the 7 layers of the detector. The CPS being developed for the ITS upgrade at IPHC (Strasbourg) is derived from the MIMOSA 28 sensor realised for the STAR-PXL at RHIC in a 0.35μm CMOS process. In order to satisfy the ITS upgrade requirements in terms of readout speed and radiation tolerance, a CMOS process with a reduced feature size and a high resistivity epitaxial layer should be exploited. In this respect, the charged particle detection performance and radiation hardness of the TowerJazz0.18μm CMOS process were studied with the help of the first prototype chip MIMOSA 32. The beam tests performed with negative pions of 120 GeV/c at the CERN-SPS allowed to measure a signal-to-noise ratio (SNR) for the non-irradiated chip in the range between 22 and 32 depending on the pixel design. The chip irradiated with the combined dose of 1 MRad and 10{sup 13}n{sub eq}/cm{sup 2} was observed to yield an SNR ranging between 11 and 23 for coolant temperatures varying from 15 °C to 30 °C. These SNR values were measured to result in particle detection efficiencies above 99.5% and 98% before and after irradiation, respectively. These satisfactory results allow to validate the TowerJazz0.18μm CMOS process for the ALICE ITS upgrade.

  18. Potentialities of high temperature reactors (HTR)

    International Nuclear Information System (INIS)

    Hittner, D.

    2001-01-01

    This articles reviews the assets of high temperature reactors concerning the amount of radioactive wastes produced. 2 factors favors HTR-type reactors: high thermal efficiency and high burn-ups. The high thermal efficiency is due to the high temperature of the coolant, in the case of the GT-MHR project (a cooperation between General Atomic, Minatom, Framatome, and Fuji Electric) designed to burn Russian military plutonium, the expected yield will be 47% with an outlet helium temperature of 850 Celsius degrees. The high temperature of the coolant favors a lot of uses of the heat generated by the reactor: urban heating, chemical processes, or desalination of sea water.The use of a HTR-type reactor in a co-generating way can value up to 90% of the energy produced. The high burn-up is due to the technology of HTR-type fuel that is based on encapsulation of fuel balls with heat-resisting materials. The nuclear fuel of Fort-Saint-Vrain unit (Usa) has reached values of burn-ups from 100.000 to 120.000 MWj/t. It is shown that the quantity of unloaded spent fuel can be divided by 4 for the same amount of electricity produced, in the case of the GT-MHR project in comparison with a light water reactor. (A.C.)

  19. Ge films grown on Si substrates by molecular-beam epitaxy below 450 deg. C

    International Nuclear Information System (INIS)

    Liu, J.; Kim, H.J.; Hul'ko, O.; Xie, Y.H.; Sahni, S.; Bandaru, P.; Yablonovitch, E.

    2004-01-01

    Ge thin films are grown on Si(001) substrates by molecular-beam epitaxy at 370 deg. C. The low-temperature epitaxial growth is compatible with the back-end thermal budget of current generation complementary metal-oxide-semiconductor technology, which is restricted to less than 450 deg. C. Reflection high-energy electron diffraction shows that single-crystal Ge thin films with smooth surfaces could be achieved below 450 deg. C. Double-axis x-ray θ/2θ scans also show that the epitaxial Ge films are almost fully strain-relaxed. As expected, cross-sectional transmission electron microscopy shows a network of dislocations at the interface. Hydrogen and oxide desorption techniques are proved to be necessary for improving the quality of the Ge films, which is reflected in improved minority carrier diffusion lengths and exceptionally low leakage currents

  20. All-perovskite transparent high mobility field effect using epitaxial BaSnO3 and LaInO3

    Directory of Open Access Journals (Sweden)

    Useong Kim

    2015-03-01

    Full Text Available We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO3 and LaInO3. We have developed epitaxial LaInO3 as the gate oxide on top of BaSnO3, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO3 films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO3 as a gate dielectric and the La-doped BaSnO3 as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm2 V−1 s−1, the on/off ratio was larger than 107, and the subthreshold swing was 0.65 V dec−1. We discuss the possible origins for such device performance and the future directions for further improvement.

  1. All-perovskite transparent high mobility field effect using epitaxial BaSnO{sub 3} and LaInO{sub 3}

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Useong; Park, Chulkwon; Kim, Young Mo; Ju, Chanjong; Park, Jisung; Char, Kookrin, E-mail: kchar@phya.snu.ac.kr [Institute of Applied Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of); Ha, Taewoo; Kim, Jae Hoon [Department of Physics, Yonsei University, Seoul 120-749 (Korea, Republic of); Kim, Namwook; Yu, Jaejun [Center for Theoretical Physics, Department of Physics and Astronomy, Seoul National University, Seoul 151-747 (Korea, Republic of)

    2015-03-01

    We demonstrate an all-perovskite transparent heterojunction field effect transistor made of two lattice-matched perovskite oxides: BaSnO{sub 3} and LaInO{sub 3}. We have developed epitaxial LaInO{sub 3} as the gate oxide on top of BaSnO{sub 3}, which were recently reported to possess high thermal stability and electron mobility when doped with La. We measured the dielectric properties of the epitaxial LaInO{sub 3} films, such as the band gap, dielectric constant, and the dielectric breakdown field. Using the LaInO{sub 3} as a gate dielectric and the La-doped BaSnO{sub 3} as a channel layer, we fabricated field effect device structure. The field effect mobility of such device was higher than 90 cm{sup 2} V{sup −1} s{sup −1}, the on/off ratio was larger than 10{sup 7}, and the subthreshold swing was 0.65 V dec{sup −1}. We discuss the possible origins for such device performance and the future directions for further improvement.

  2. Molecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction

    International Nuclear Information System (INIS)

    Shayduk, Roman

    2010-01-01

    The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te phase change alloys on GaSb(001). We deposit Ge-Sb-Te (GST) films on GaSb(001) substrates by means of molecular beam epitaxy (MBE). The film orientation and lattice constant evolution is determined in real time during growth using grazing incidence X-ray diffraction (GID). The nucleation stage of the growth is studied in situ using reflection high energy electron diffraction (RHEED). Four growth regimes of GST on GaSb(001) were observed: amorphous, polycrystalline, incubated epitaxial and direct epitaxial. Amorphous film grows for substrate temperatures below 100 C. For substrate temperatures in the range 100-160 C, the film grows in polycrystalline form. Incubated epitaxial growth is observed at temperatures from 180 to 210 C. This growth regime is characterized by an initial 0.6nm thick amorphous layer formation, which crystallizes epitaxially as the film thickness increases. The determined lattice constant of the films is 6.01 A, very close to that of the metastable GST phase. The films predominantly possess an epitaxial cube-on-cube relationship. At higher temperatures the films grow epitaxially, however the growth rate is rapidly decreasing with temperature. At temperatures above 270 C the growth rate is zero. The composition of the grown films is close to 2:2:5 for Ge, Sb and Te, respectively. The determined crystal structure of the films is face centered cubic (FCC) with a rhombohedral distortion. The analysis of X-ray peak widths gives a value for the rhombohedral angle of 89.56 . We observe two types of reflections in reciprocal space indicating two FCC sublattices in

  3. High temperature superconductivity the road to higher critical temperature

    CERN Document Server

    Uchida, Shin-ichi

    2015-01-01

    This book presents an overview of material-specific factors that influence Tc and give rise to diverse Tc values for copper oxides and iron-based high- Tc superconductors on the basis of more than 25 years of experimental data, to most of which the author has made important contributions. The book then explains why both compounds are distinct from others with similar crystal structure and whether or not one can enhance Tc, which in turn gives a hint on the unresolved pairing mechanism. This is an unprecedented new approach to the problem of high-temperature superconductivity and thus will be inspiring to both specialists and non-specialists interested in this field.   Readers will receive in-depth information on the past, present, and future of high-temperature superconductors, along with special, updated information on what the real highest Tc values are and particularly on the possibility of enhancing Tc for each member material, which is important for application. At this time, the highest Tc has not been...

  4. High transition temperature superconducting integrated circuit

    International Nuclear Information System (INIS)

    DiIorio, M.S.

    1985-01-01

    This thesis describes the design and fabrication of the first superconducting integrated circuit capable of operating at over 10K. The primary component of the circuit is a dc SQUID (Superconducting QUantum Interference Device) which is extremely sensitive to magnetic fields. The dc SQUID consists of two superconductor-normal metal-superconductor (SNS) Josephson microbridges that are fabricated using a novel step-edge process which permits the use of high transition temperature superconductors. By utilizing electron-beam lithography in conjunction with ion-beam etching, very small microbridges can be produced. Such microbridges lead to high performance dc SQUIDs with products of the critical current and normal resistance reaching 1 mV at 4.2 K. These SQUIDs have been extensively characterized, and exhibit excellent electrical characteristics over a wide temperature range. In order to couple electrical signals into the SQUID in a practical fashion, a planar input coil was integrated for efficient coupling. A process was developed to incorporate the technologically important high transition temperature superconducting materials, Nb-Sn and Nb-Ge, using integrated circuit techniques. The primary obstacles were presented by the metallurgical idiosyncrasies of the various materials, such as the need to deposit the superconductors at elevated temperatures, 800-900 0 C, in order to achieve a high transition temperature

  5. Brazing, high temperature brazing and diffusion welding

    International Nuclear Information System (INIS)

    1989-01-01

    Brazing and high temperature brazing is a major joining technology within the economically important fields of energy technology, aerospace and automotive engineering, that play a leading role for technical development everywhere in the world. Moreover diffusion welding has gained a strong position especially in advanced technologies due to its specific advantages. Topics of the conference are: 1. high-temperature brazing in application; 2. basis of brazing technology; 3. brazing of light metals; 4. nondestructive testing; 5. diffusion welding; 6. brazing of hard metals and other hard materials; and 7. ceramic-metal brazing. 28 of 20 lectures and 20 posters were recorded separately for the database ENERGY. (orig./MM) [de

  6. Materials for high-temperature fuel cells

    CERN Document Server

    Jiang, San Ping; Lu, Max

    2013-01-01

    There are a large number of books available on fuel cells; however, the majority are on specific types of fuel cells such as solid oxide fuel cells, proton exchange membrane fuel cells, or on specific technical aspects of fuel cells, e.g., the system or stack engineering. Thus, there is a need for a book focused on materials requirements in fuel cells. Key Materials in High-Temperature Fuel Cells is a concise source of the most important and key materials and catalysts in high-temperature fuel cells with emphasis on the most important solid oxide fuel cells. A related book will cover key mater

  7. Initial stages of high temperature metal oxidation

    International Nuclear Information System (INIS)

    Yang, C.Y.; O'Grady, W.E.

    1981-01-01

    The application of XPS and UPS to the study of the initial stages of high temperature (> 350 0 C) electrochemical oxidation of iron and nickel is discussed. In the high temperature experiments, iron and nickel electrodes were electrochemically oxidized in contact with a solid oxide electrolyte in the uhv system. The great advantages of this technique are that the oxygen activity at the interface may be precisely controlled and the ability to run the reactions in uhv allows the simultaneous observation of the reactions by XPS

  8. High temperature giant dipole and isoscalar resonances

    International Nuclear Information System (INIS)

    Navarro, J.; Barranco, M.; Garcias, F.; Suraud, E.

    1990-01-01

    We present a systematic study of the Giant Dipole Resonance (GDR) at high temperatures (T > ∼ 4 MeV) in the framework of a semi-classical approximation that uses the m 1 and m 3 RPA sum rules to estimate the GDR mean energy. We focus on the evolution with T of the collective nature of the GDR and of the L = 0,2,3 and 4 isoscalar resonances. We find that the GDR remains particularly collective at high T, suggesting that it might be possible to observe it experimentally even at temperatures close to the maximum one a nucleus can sustain

  9. Optical properties of pure and Ce3+ doped gadolinium gallium garnet crystals and epitaxial layers

    International Nuclear Information System (INIS)

    Syvorotka, I.I.; Sugak, D.; Wierzbicka, A.; Wittlin, A.; Przybylińska, H.; Barzowska, J.; Barcz, A.; Berkowski, M.; Domagała, J.; Mahlik, S.; Grinberg, M.; Ma, Chong-Geng

    2015-01-01

    Results of X-ray diffraction and low temperature optical absorption measurements of cerium doped gadolinium gallium garnet single crystals and epitaxial layers are reported. In the region of intra-configurational 4f–4f transitions the spectra of the bulk crystals exhibit the signatures of several different Ce 3+ related centers. Apart from the dominant center, associated with Ce substituting gadolinium, at least three other centers are found, some of them attributed to the so-called antisite locations of rare-earth ions in the garnet host, i.e., in the Ga positions. X-ray diffraction data prove lattice expansion of bulk GGG crystals due to the presence of rare-earth antisites. The concentration of the additional Ce-related centers in epitaxial layers is much lower than in the bulk crystals. However, the Ce-doped layers incorporate a large amount of Pb from flux, which is the most probable source of nonradiative quenching of Ce luminescence, not observed in crystals grown by the Czochralski method. - Highlights: • Ce 3+ multicenters found in Gadolinium Gallium Garnet crystals and epitaxial layers. • High quality epitaxial layers of pure and Ce-doped GGG were grown. • Luminescence quenching of Ce 3+ by Pb ions from flux detected in GGG epitaxial layers. • X-ray diffraction allows measuring the amount of the rare-earth antisites in GGG

  10. Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperature

    International Nuclear Information System (INIS)

    Stork, J.M.C.; Harame, D.L.; Meyerson, B.S.; Nguyen, T.N.

    1989-01-01

    The base profile requirements of Si bipolar junction transistors (BJT's) high-performance operation at liquid-nitrogen temperature are examined. Measurements of thin epitaxial-base polysilicon-emitter n-p-n transistors with increasing base doping show the effects of bandgap narrowing, mobility changes, and carrier freezeout. At room temperature the collector current at low injection is proportional to the integrated base charge, independent of the impurity distribution. At temperatures below 150 Κ, however, minority injection is dominated by the peak base doping because of the greater effectiveness of bandgap narrowing. When the peak doping in the base approaches 10 19 cm -3 , the bandgap difference between emitter and base is sufficiently small that the current gain no longer monotonically decreases with lower temperature but instead shows a maximum as low as 180 Κ. The device design window appears limited at the low-current end by increased base-emitter leakage due to tunneling and by resistance control at the high-current end. Using the measured dc characteristics, circuit delay calculations are made to estimate the performance of an ECL ring oscillator at room and liquid-nitrogen temperatures. It is shown that if the base doping can be raised to 10 19 cm -3 while keeping the base thickness constant, the minimum delay at liquid nitrogen can approach the delay of optimized devices at room temperature

  11. High temperature experiment for accelerator inertial fusion

    International Nuclear Information System (INIS)

    Lee, E.P.

    1985-01-01

    The High Temperature Experiment (HTE) is intended to produce temperatures of 50-100 eV in solid density targets driven by heavy ion beams from a multiple beam induction linac. The fundamental variables (particle species, energy number of beamlets, current and pulse length) must be fixed to achieve the temperature at minimum cost, subject to criteria of technical feasibility and relevance to the development of a Fusion Driver. The conceptual design begins with an assumed (radiation-limited) target temperature and uses limitations due to particle range, beamlet perveance, and target disassembly to bound the allowable values of mass number (A) and energy (E). An accelerator model is then applied to determine the minimum length accelerator, which is a guide to total cost. The accelerator model takes into account limits on transportable charge, maximum gradient, core mass per linear meter, and head-to-tail momentum variation within a pulse

  12. High temperature reactors for cogeneration applications

    Energy Technology Data Exchange (ETDEWEB)

    Verfondern, Karl [Forschungszentrum Juelich (Germany). IEK-6; Allelein, Hans-Josef [Forschungszentrum Juelich (Germany). IEK-6; RWTH Aachen (Germany). Lehrstuhl fuer Reaktorsicherheit und -technik (LRST)

    2016-05-15

    There is a large potential for nuclear energy also in the non-electric heat market. Many industrial sectors have a high demand for process heat and steam at various levels of temperature and pressure to be provided for desalination of seawater, district heating, or chemical processes. The future generation of nuclear plants will be capable to enter the wide field of cogeneration of heat and power (CHP), to reduce waste heat and to increase efficiency. This requires an adjustment to multiple needs of the customers in terms of size and application. All Generation-IV concepts proposed are designed for coolant outlet temperatures above 500 C, which allow applications in the low and medium temperature range. A VHTR would even be able to cover the whole temperature range up to approx. 1 000 C.

  13. High-Temperature Shape Memory Polymers

    Science.gov (United States)

    Yoonessi, Mitra; Weiss, Robert A.

    2012-01-01

    physical conformation changes when exposed to an external stimulus, such as a change in temperature. Such materials have a permanent shape, but can be reshaped above a critical temperature and fixed into a temporary shape when cooled under stress to below the critical temperature. When reheated above the critical temperature (Tc, also sometimes called the triggering or switching temperature), the materials revert to the permanent shape. The current innovation involves a chemically treated (sulfonated, carboxylated, phosphonated, or other polar function group), high-temperature, semicrystalline thermoplastic poly(ether ether ketone) (Tg .140 C, Tm = 340 C) mix containing organometallic complexes (Zn++, Li+, or other metal, ammonium, or phosphonium salts), or high-temperature ionic liquids (e.g. hexafluorosilicate salt with 1-propyl-3- methyl imidazolium, Tm = 210 C) to form a network where dipolar or ionic interactions between the polymer and the low-molecular-weight or inorganic compound forms a complex that provides a physical crosslink. Hereafter, these compounds will be referred to as "additives". The polymer is semicrystalline, and the high-melt-point crystals provide a temporary crosslink that acts as a permanent crosslink just so long as the melting temperature is not exceeded. In this example case, the melting point is .340 C, and the shape memory critical temperature is between 150 and 250 C. PEEK is an engineering thermoplastic with a high Young fs modulus, nominally 3.6 GPa. An important aspect of the invention is the control of the PEEK functionalization (in this example, the sulfonation degree), and the thermal properties (i.e. melting point) of the additive, which determines the switching temperature. Because the compound is thermoplastic, it can be formed into the "permanent" shape by conventional plastics processing operations. In addition, the compound may be covalently cross - linked after forming the permanent shape by S-PEEK by applying ionizing

  14. HTGR fuel behavior at very high temperature

    International Nuclear Information System (INIS)

    Kashimura, Satoru; Ogawa, Touru; Fukuda, Kousaku; Iwamoto, Kazumi

    1986-03-01

    Fuel behavior at very high temperature simulating abnormal transient of the reactor operation and accidents have been investigated on TRISO coating LEU oxide particle fuels at JAERI. The test simulating the abnormal transient was carried out by irradiation of loose coated particles above 1600 deg C. The irradiation test indicated that particle failure was principally caused by kernel migration. For simulation of the core heat-up accident, two experiments of out-of-pile heating were made. Survival temperature limits were measured and fuel performance at very high temperature were investigated by the heatings. Study on the fuel behavior under reactivity initiated accident was made by NSRR(Nuclear Safety Research Reactor) pulse irradiation, where maximum temperature was higher than 2800 deg C. It was found in the pulse irradiation experiments that the coated particles incorporated in the compacts did not so severely fail unlike the loose coated particles at ultra high temperature above 2800 deg C. In the former particles UO 2 material at the center of the kernel vaporized, leaving a spherical void. (author)

  15. Positron annihilation studies on high temperature superconductors

    International Nuclear Information System (INIS)

    Sundar, C.S.; Bharathi, A.

    1991-01-01

    The results of positron annihilation measurements as a function of temperature, across Tc, in a variety of high temperature superconductors such as Y-Ba-Cu-O (Y1237), Y-Ba-Cu-O (Y1248), Bi-Sr-Ca-Cu-O, Tl-Ba-Ca-Cu-O, Ba-K-Bi-O and Nd-Ce-Cu-O are presented. It is shown that the variation of annihilation parameters in the superconducting state is correlated with the diposition of the positron density distribution with respect to the superconducting CuO planes. An increase in positron lifetime is observed below Tc when the positrons probe the CuO planes whereas a decrease in lifetime is observed when the positron density overlaps predominantly with the apical oxygen atom. With this correlation, the different temperature variation of annihilation parameters, seen in the various high temperature superconductors, is understood in terms of a local charge transfer from the planar oxygen atom to the apical oxygen atom. The significance of these results in the context of various theoretical models of high temperature superconductivity is discussed. In addition, the application of positron annihilation spectroscopy to the study of oxygen defects in the Y-Ba-Cu-O, Bi-Sr-Ca-Cu-O and Nd-Ce-Cu-O is presented. (author). 53 refs., 17 figs., 2 tabs

  16. Bimodular high temperature planar oxygen gas sensor

    Directory of Open Access Journals (Sweden)

    Xiangcheng eSun

    2014-08-01

    Full Text Available A bimodular planar O2 sensor was fabricated using NiO nanoparticles (NPs thin film coated yttria-stabilized zirconia (YSZ substrate. The thin film was prepared by radio frequency (r.f. magnetron sputtering of NiO on YSZ substrate, followed by high temperature sintering. The surface morphology of NiO nanoparticles film was characterized by atomic force microscopy (AFM and scanning electron microscopy (SEM. X-ray diffraction (XRD patterns of NiO NPs thin film before and after high temperature O2 sensing demonstrated that the sensing material possesses a good chemical and structure stability. The oxygen detection experiments were performed at 500 °C, 600 °C and 800 °C using the as-prepared bimodular O2 sensor under both potentiometric and resistance modules. For the potentiometric module, a linear relationship between electromotive force (EMF output of the sensor and the logarithm of O2 concentration was observed at each operating temperature, following the Nernst law. For the resistance module, the logarithm of electrical conductivity was proportional to the logarithm of oxygen concentration at each operating temperature, in good agreement with literature report. In addition, this bimodular sensor shows sensitive, reproducible and reversible response to oxygen under both sensing modules. Integration of two sensing modules into one sensor could greatly enrich the information output and would open a new venue in the development of high temperature gas sensors.

  17. Effect of Structural Stress on the Laser Quality of Highly Doped Yb:KY(WO4)2/KY(WO4)2 and Yb:KLu(WO4)2/KLu(WO4)2 Epitaxial Structures

    International Nuclear Information System (INIS)

    Carvajal, J.; Raghothamachar, B.; Silvestre, O.; Chen, H.; Pujol, M.; Petrov, V.; Dudley, M.; Aguilo, M.; Diaz, F.

    2009-01-01

    In this communication we demonstrate how the difference in laser performance of two highly doped (20 at %) epitaxial layers of Yb-doped KY(WO4)2 (KYW) grown on a KYW substrate and Yb-doped KLu(WO4)2 (KLuW) grown on a KLuW substrate, respectively, is related to the presence of structural stress in the epilayers, investigated by synchrotron white beam X-ray topography. From the results obtained, it is clear that the samples that show a larger amount of structural stress, Yb:KYW/KYW epitaxies, lead to lower efficiency in laser operation, giving a direct correlation between the existence and magnitude of such structural stress and the loss in efficiency of laser performance in such epitaxial layers which, from a spectroscopical point of view, are otherwise equivalent.

  18. Analogue demonstration of a high temperature superconducting sigma-delta modulator with 27 GHz sampling

    Energy Technology Data Exchange (ETDEWEB)

    Forrester, M.G.; Hunt, B.D.; Miller, D.L.; Talvacchio, J.; Young, R.M. [Northrop Grumman Science and Technology Center, Pittsburgh, PA 15235-5098 (United States)

    1999-11-01

    We have successfully fabricated and tested a high temperature superconducting (HTS) sigma-delta modulator for analogue-to-digital conversion. This is the first demonstration of a GHz sampling A-to-D in HTS. The 15-junction single-flux-quantum (SFQ) circuit, fabricated using an epitaxial multilayer HTS process with YBCO/Co-YBCO/YBCO edge junctions, was internally clocked at 27 GHz and used to convert a 5.01 MHz signal. The modulator demonstrated a spur-free dynamic range of more than 75 dB. Two-tone measurements with 5.01 MHz and 5.51 MHz signals demonstrated third-order intermodulation products to be lower than -59 dBc. Demonstration of a functional HTS modulator represents a significant milestone in the development of high dynamic range ADCs suitable for such applications as surveillance radar. (author)

  19. High temperature and high pressure equation of state of gold

    International Nuclear Information System (INIS)

    Matsui, Masanori

    2010-01-01

    High-temperature and high-pressure equation of state (EOS) of Au has been developed using measured data from shock compression up to 240 GPa, volume thermal expansion between 100 and 1300 K and 0 GPa, and temperature dependence of bulk modulus at 0 GPa from ultrasonic measurements. The lattice thermal pressures at high temperatures have been estimated based on the Mie-Grueneisen-Debye type treatment with the Vinet isothermal EOS. The contribution of electronic thermal pressure at high temperatures, which is relatively insignificant for Au, has also been included here. The optimized EOS parameters are K' 0T = 6.0 and q = 1.6 with fixed K 0T = 167 GPa, γ 0 = 2.97, and Θ 0 = 170 K from previous investigations. We propose the present EOS to be used as a reliable pressure standard for static experiments up to 3000K and 300 GPa.

  20. High Temperature Materials Interim Data Qualification Report

    International Nuclear Information System (INIS)

    Lybeck, Nancy

    2010-01-01

    Projects for the very high temperature reactor (VHTR) Technology Development Office provide data in support of Nuclear Regulatory Commission licensing of the VHTR. Fuel and materials to be used in the reactor are tested and characterized to quantify performance in high temperature and high fluence environments. The VHTR program has established the NGNP Data Management and Analysis System (NDMAS) to ensure that VHTR data are qualified for use, stored in a readily accessible electronic form, and analyzed to extract useful results. This document focuses on the first NDMAS objective. It describes the High Temperature Materials characterization data stream, the processing of these data within NDMAS, and reports the interim FY2010 qualification status of the data. Data qualification activities within NDMAS for specific types of data are determined by the data qualification category assigned by the data generator. The High Temperature Materials data are being collected under NQA-1 guidelines, and will be qualified data. For NQA-1 qualified data, the qualification activities include: (1) capture testing, to confirm that the data stored within NDMAS are identical to the raw data supplied, (2) accuracy testing to confirm that the data are an accurate representation of the system or object being measured, and (3) documenting that the data were collected under an NQA-1 or equivalent Quality Assurance program. Currently, data from two test series within the High Temperature Materials data stream have been entered into the NDMAS vault: (1) Tensile Tests for Sm (i.e., Allowable Stress) Confirmatory Testing - 1,403,994 records have been inserted into the NDMAS database. Capture testing is in process. (2) Creep-Fatigue Testing to Support Determination of Creep-Fatigue Interaction Diagram - 918,854 records have been processed and inserted into the NDMAS database. Capture testing is in process.

  1. Epitaxial growth of GaN by radical-enhanced metalorganic chemical vapor deposition (REMOCVD) in the downflow of a very high frequency (VHF) N2/H2 excited plasma - effect of TMG flow rate and VHF power

    Science.gov (United States)

    Lu, Yi; Kondo, Hiroki; Ishikawa, Kenji; Oda, Osamu; Takeda, Keigo; Sekine, Makoto; Amano, Hiroshi; Hori, Masaru

    2014-04-01

    Gallium nitride (GaN) films have been grown by using our newly developed Radical-Enhanced Metalorganic Chemical Vapor Deposition (REMOCVD) system. This system has three features: (1) application of very high frequency (60 MHz) power in order to increase the plasma density, (2) introduction of H2 gas together with N2 gas in the plasma discharge region to generate not only nitrogen radicals but also active NHx molecules, and (3) radical supply under remote plasma arrangement with suppression of charged ions and photons by employing a Faraday cage. Using this new system, we have studied the effect of the trimethylgallium (TMG) source flow rate and of the plasma generation power on the GaN crystal quality by using scanning electron microscopy (SEM) and double crystal X-ray diffraction (XRD). We found that this REMOCVD allowed the growth of epitaxial GaN films of the wurtzite structure of (0001) orientation on sapphire substrates with a high growth rate of 0.42 μm/h at a low temperature of 800 °C. The present REMOCVD is a promising method for GaN growth at relatively low temperature and without using costly ammonia gas.

  2. Dynamics of Gauge Fields at High Temperature

    NARCIS (Netherlands)

    Nauta, B.J.

    2000-01-01

    An effective description of dynamical Bose fields is provided by the classical (high-temperature) limit of thermal field theory. The main subject of this thesis is to improve the ensuing classical field theory, that is, to include the dominant quantum corrections and to add counter terms for the

  3. High temperature oxidation resistant cermet compositions

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1976-01-01

    Cermet compositions are designed to provide high temperature resistant refractory coatings on stainless steel or molybdenum substrates. A ceramic mixture of chromium oxide and aluminum oxide form a coating of chromium oxide as an oxidation barrier around the metal particles, to provide oxidation resistance for the metal particles.

  4. Dense high-temperature plasma transport processes

    International Nuclear Information System (INIS)

    Giniyatova, Sh.G.

    2002-01-01

    In this work the transport processes in dense high-temperature semiclassical plasma are studied on the base of the kinetic equation, where the semiclassical potential was used, in its collision integral. The coefficient of plasma electrical conductivity, viscosity and thermal conductivity were received. There were compared with the other authors' results. The Grad's method was used obtaining of viscosity and thermal coefficients. (author)

  5. Nuclear and quark matter at high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Biro, Tamas S. [H.A.S. Wigner Research Centre for Physics, Budapest (Hungary); Jakovac, Antal [Roland Eotvos University, Budapest (Hungary); Schram, Zsolt [University of Debrecen, Institute for Theoretical Physics, Debrecen (Hungary)

    2017-03-15

    We review important ideas on nuclear and quark matter description on the basis of high-temperature field theory concepts, like resummation, dimensional reduction, interaction scale separation and spectral function modification in media. Statistical and thermodynamical concepts are spotted in the light of these methods concentrating on the -partially still open- problems of the hadronization process. (orig.)

  6. The discovery of high temperature superconductivity

    International Nuclear Information System (INIS)

    Muller, K. A.; Bednorz, J.G.

    1988-01-01

    This article recalls the different stages which led to the display of high temperature superconductivity for Ba, La, Cu, O and the following avalanche of discoveries for other oxides; the numerous theoretical models which tentatively explain the current experimental results are also reviewed. 30 refs

  7. The discovery of high temperature superconductivity

    International Nuclear Information System (INIS)

    Muller, K.A.; Bednorz, J.G.

    1988-01-01

    This article recalls the different stages which led to the display of high temperature superconductivity for Ba La Cu O, and the following avalanche of discoveries for other oxides; the numerous theoretical models which tentatively explain the current experimental results are also reviewed [fr

  8. High temperature applications of nuclear energy

    International Nuclear Information System (INIS)

    1994-08-01

    The meeting was organized to review industry/user needs designs, status of technology and the associated economics for high temperature applications. It was attended by approximately 100 participants from nine countries. The participants presented 17 papers. A separate abstract was prepared for each of these papers. Refs, figs and tabs

  9. Potential applications of high temperature helium

    International Nuclear Information System (INIS)

    Schleicher, R.W. Jr.; Kennedy, A.J.

    1992-09-01

    This paper discusses the DOE MHTGR-SC program's recent activity to improve the economics of the MHTGR without sacrificing safety performance and two potential applications of high temperature helium, the MHTGR gas turbine plant and a process heat application for methanol production from coal

  10. HYFIRE: fusion-high temperature electrolysis system

    International Nuclear Information System (INIS)

    Fillo, J.A.; Powell, J.R.; Steinberg, M.; Benenati, R.; Dang, V.D.; Horn, F.; Isaacs, H.; Lazareth, O.; Makowitz, H.; Usher, J.

    1980-01-01

    The Brookhaven National Laboratory (BNL) is carrying out a comprehensive conceptual design study called HYFIRE of a commercial fusion Tokamak reactor, high-temperature electrolysis system. The study is placing particular emphasis on the adaptability of the STARFIRE power reactor to a synfuel application. The HYFIRE blanket must perform three functions: (a) provide high-temperature (approx. 1400 0 C) process steam at moderate pressures (in the range of 10 to 30 atm) to the high-temperature electrolysis (HTE) units; (b) provide high-temperature (approx. 700 to 800 0 C) heat to a thermal power cycle for generation of electricity to the HTE units; and (c) breed enough tritium to sustain the D-T fuel cycle. In addition to thermal energy for the decomposition of steam into its constitutents, H 2 and O 2 , electrical input is required. Power cycle efficiencies of approx. 40% require He cooling for steam superheat. Fourteen hundred degree steam coupled with 40% power cycle efficiency results in a process efficiency (conversion of fusion energy to hydrogen chemical energy) of 50%

  11. High Temperature Corrosion in Biomass Incineration Plants

    DEFF Research Database (Denmark)

    Montgomery, Melanie; Maahn, Ernst emanuel; Gotthjælp, K.

    1997-01-01

    The aim of the project is to study the role of ash deposits in high temperature corrosion of superheater materials in biomass and refuse fire combined heat and power plants. The project has included the two main activities: a) A chemical characterisation of ash deposits collected from a major...

  12. Thermoelastic properties of minerals at high temperature

    Indian Academy of Sciences (India)

    In our present study, we have investigated the thermophysical properties of two minerals (pyrope-rich garnet and MgAl2O4) under high temperatures and calculated the second-order elastic constant () and bulk modulus (T) of the above minerals, in two cases first by taking Anderson–Gruneisen parameter (T) as ...

  13. Theory of high temperature plasmas. Final report

    International Nuclear Information System (INIS)

    Davidson, R.C.; Liu, C.S.

    1977-01-01

    This is a report on the technical progress in our analytic studies of high-temperature fusion plasmas. We also emphasize that the research summarized here makes extensive use of computational methods and therefore forms a strong interface with our numerical modeling program which is discussed later in the report

  14. Wet-etching induced abnormal phase transition in highly strained VO{sub 2}/TiO{sub 2} (001) epitaxial film

    Energy Technology Data Exchange (ETDEWEB)

    Ren, Hui; Chen, Shi; Chen, Yuliang; Luo, Zhenlin; Zhou, Jingtian; Zheng, Xusheng; Wang, Liangxin; Li, Bowen; Zou, Chongwen [National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei (China)

    2018-01-15

    The metal-insulator transition (MIT) behavior in vanadium dioxide (VO{sub 2}) epitaxial film is known to be dramatically affected by interfacial stress due to lattice mismatching. For the VO{sub 2}/TiO{sub 2} (001) system, there exists a considerable strain in ultra-thin VO{sub 2} thin film, which shows a lower T{sub c} value close to room temperature. As the VO{sub 2} epitaxial film grows thicker layer-by-layer along the ''bottom-up'' route, the strain will be gradually relaxed and T{sub c} will increase as well, until the MIT behavior becomes the same as that of bulk material with a T{sub c} of about 68 C. Whereas, in this study, we find that the VO{sub 2}/TiO{sub 2} (001) film thinned by ''top-down'' wet-etching shows an abnormal variation in MIT, which accompanies the potential relaxation of film strain with thinning. It is observed that even when the strained VO{sub 2} film is etched up to several nanometers, the MIT persists, and T{sub c} will increase up to that of bulk material, showing the trend to a stress-free ultra-thin VO{sub 2} film. The current findings demonstrate a facial chemical-etching way to change interfacial strain and modulate the phase transition behavior of ultrathinVO{sub 2} films, which can also be applied to other strained oxide films. (copyright 2017 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  15. Nuclear shell effects at high temperatures

    International Nuclear Information System (INIS)

    Davidson, N.J.; Miller, H.G.

    1993-01-01

    In discussing the disappearance of nuclear shell effects at high temperatures, it is important to distinguish between the ''smearing out'' of the single-particle spectrum with increasing temperature and the vanishing of shell related structures in many-body quantities such as the excitation energy per nucleon. We propose a semiempirical method to obtain an upper bound on the temperature required to smooth the single-particle spectrum, and point out that shell effects in many-body parameters may persist above this temperature. We find that the temperature required to smear out the single-particle spectrum is approximately 1 MeV for heavy nuclei (A approx-gt 150) and about 3--4 MeV for light nuclei (A approx-lt 50), in reasonable agreement with the estimate of 41/πA 1/3 obtained from calculations with harmonic oscillator potentials. These temperatures correspond to many-body excitation energies of approximately 20 and 60 MeV, respectively

  16. High temperature reactor safety and environment

    International Nuclear Information System (INIS)

    Brisbois, J.; Charles, J.

    1975-01-01

    High-temperature reactors are endowed with favorable safety and environmental factors resulting from inherent design, main-component safety margins, and conventional safety systems. The combination of such characteristics, along with high yields, prove in addition, that such reactors are plagued with few problems, can be installed near users, and broaden the recourse to specific power, therefore fitting well within a natural environment [fr

  17. High-pressure-high-temperature treatment of natural diamonds

    CERN Document Server

    Royen, J V

    2002-01-01

    The results are reported of high-pressure-high-temperature (HPHT) treatment experiments on natural diamonds of different origins and with different impurity contents. The diamonds are annealed in a temperature range up to 2000 sup o C at stabilizing pressures up to 7 GPa. The evolution is studied of different defects in the diamond crystal lattice. The influence of substitutional nitrogen atoms, plastic deformation and the combination of these is discussed. Diamonds are characterized at room and liquid nitrogen temperature using UV-visible spectrophotometry, Fourier transform infrared spectrophotometry and photoluminescence spectrometry. The economic implications of diamond HPHT treatments are discussed.

  18. New Waste Calciner High Temperature Operation

    International Nuclear Information System (INIS)

    Swenson, M.C.

    2000-01-01

    A new Calciner flowsheet has been developed to process the sodium-bearing waste (SBW) in the INTEC Tank Farm. The new flowsheet increases the normal Calciner operating temperature from 500 C to 600 C. At the elevated temperature, sodium in the waste forms stable aluminates, instead of nitrates that melt at calcining temperatures. From March through May 2000, the new high-temperature flowsheet was tested in the New Waste Calcining Facility (NWCF) Calciner. Specific test criteria for various Calciner systems (feed, fuel, quench, off-gas, etc.) were established to evaluate the long-term operability of the high-temperature flowsheet. This report compares in detail the Calciner process data with the test criteria. The Calciner systems met or exceeded all test criteria. The new flowsheet is a visible, long-term method of calcining SBW. Implementation of the flowsheet will significantly increase the calcining rate of SBW and reduce the amount of calcine produced by reducing the amount of chemical additives to the Calciner. This will help meet the future waste processing milestones and regulatory needs such as emptying the Tank Farm

  19. A high temperature reactor for ship propulsion

    International Nuclear Information System (INIS)

    Lobet, P.; Seigel, R.; Thompson, A.C.; Beadnell, R.M.; Beeley, P.A.

    2002-01-01

    The initial thermal hydraulic and physics design of a high temperature gas cooled reactor for ship propulsion is described. The choice of thermodynamic cycle and thermal power is made to suit the marine application. Several configurations of a Helium cooled, Graphite moderated reactor are then analysed using the WIMS and MONK codes from AEA Technology. Two geometries of fuel elements formed using micro spheres in prismatic blocks, and various arrangements of control rods and poison rods are examined. Reactivity calculations through life are made and a pattern of rod insertion to flatten the flux is proposed and analysed. Thermal hydraulic calculations are made to find maximum fuel temperature under high power with optimized flow distribution. Maximum temperature after loss of flow and temperatures in the reactor vessel are also computed. The temperatures are significantly below the known limits for the type of fuel proposed. It is concluded that the reactor can provide the required power and lifetime between refueling within likely space and weight constraints. (author)

  20. High temperature superconductors applications in telecommunications

    International Nuclear Information System (INIS)

    Kumar, A.A.; Li, J.; Zhang, M.F.

    1994-01-01

    The purpose of this paper is twofold: to discuss high temperature superconductors with specific reference to their employment in telecommunications applications; and to discuss a few of the limitations of the normally employed two-fluid model. While the debate on the actual usage of high temperature superconductors in the design of electronic and telecommunications devices-obvious advantages versus practical difficulties-needs to be settled in the near future, it is of great interest to investigate the parameters and the assumptions that will be employed in such designs. This paper deals with the issue of providing the microwave design engineer with performance data for such superconducting waveguides. The values of conductivity and surface resistance, which are the primary determining factors of a waveguide performance, are computed based on the two-fluid model. A comparison between two models-a theoretical one in terms of microscopic parameters (termed Model A) and an experimental fit in terms of macroscopic parameters (termed Model B)-shows the limitations and the resulting ambiguities of the two-fluid model at high frequencies and at temperatures close to the transition temperature. The validity of the two-fluid model is then discussed. Our preliminary results show that the electrical transport description in the normal and superconducting phases as they are formulated in the two-fluid model needs to be modified to incorporate the new and special features of high temperature superconductors. Parameters describing the waveguide performance-conductivity, surface resistance and attenuation constant-will be computed. Potential applications in communications networks and large scale integrated circuits will be discussed. Some of the ongoing work will be reported. In particular, a brief proposal is made to investigate of the effects of electromagnetic interference and the concomitant notion of electromagnetic compatibility (EMI/EMC) of high T c superconductors

  1. High temperature superconductors applications in telecommunications

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.A.; Li, J.; Zhang, M.F. [Prairie View A& M Univ., Texas (United States)

    1994-12-31

    The purpose of this paper is twofold: to discuss high temperature superconductors with specific reference to their employment in telecommunications applications; and to discuss a few of the limitations of the normally employed two-fluid model. While the debate on the actual usage of high temperature superconductors in the design of electronic and telecommunications devices-obvious advantages versus practical difficulties-needs to be settled in the near future, it is of great interest to investigate the parameters and the assumptions that will be employed in such designs. This paper deals with the issue of providing the microwave design engineer with performance data for such superconducting waveguides. The values of conductivity and surface resistance, which are the primary determining factors of a waveguide performance, are computed based on the two-fluid model. A comparison between two models-a theoretical one in terms of microscopic parameters (termed Model A) and an experimental fit in terms of macroscopic parameters (termed Model B)-shows the limitations and the resulting ambiguities of the two-fluid model at high frequencies and at temperatures close to the transition temperature. The validity of the two-fluid model is then discussed. Our preliminary results show that the electrical transport description in the normal and superconducting phases as they are formulated in the two-fluid model needs to be modified to incorporate the new and special features of high temperature superconductors. Parameters describing the waveguide performance-conductivity, surface resistance and attenuation constant-will be computed. Potential applications in communications networks and large scale integrated circuits will be discussed. Some of the ongoing work will be reported. In particular, a brief proposal is made to investigate of the effects of electromagnetic interference and the concomitant notion of electromagnetic compatibility (EMI/EMC) of high T{sub c} superconductors.

  2. Investigation of epitaxial silicon layers as a material for radiation hardened silicon detectors

    International Nuclear Information System (INIS)

    Li, Z.; Eremin, V.; Ilyashenko, I.; Ivanov, A.; Verbitskaya, E.

    1997-12-01

    Epitaxial grown thick layers (≥ 100 micrometers) of high resistivity silicon (Epi-Si) have been investigated as a possible candidate of radiation hardened material for detectors for high-energy physics. As grown Epi-Si layers contain high concentration (up to 2 x 10 12 cm -3 ) of deep levels compared with that in standard high resistivity bulk Si. After irradiation of test diodes by protons (E p = 24 GeV) with a fluence of 1.5 x 10 11 cm -2 , no additional radiation induced deep traps have been detected. A reasonable explanation is that there is a sink of primary radiation induced defects (interstitial and vacancies), possibly by as-grown defects, in epitaxial layers. The ''sinking'' process, however, becomes non-effective at high radiation fluences (10 14 cm -2 ) due to saturation of epitaxial defects by high concentration of radiation induced ones. As a result, at neutron fluence of 1 x 10 14 cm -2 the deep level spectrum corresponds to well-known spectrum of radiation induced defects in high resistivity bulk Si. The net effective concentration in the space charge region equals to 3 x 10 12 cm -3 after 3 months of room temperature storage and reveals similar annealing behavior for epitaxial as compared to bulk silicon

  3. Atomically layer-by-layer diffusion of oxygen/hydrogen in highly epitaxial PrBaCo{sub 2}O{sub 5.5+δ} thin films

    Energy Technology Data Exchange (ETDEWEB)

    Bao, Shanyong; Xu, Xing; Enriquez, Erik; Mace, Brennan E.; Chen, Garry; Kelliher, Sean P.; Chen, Chonglin, E-mail: cl.chen@utsa.edu [Department of Physics and Astronomy, University of Texas, San Antonio, Texas 78249 (United States); Zhang, Yamei [Department of Physics, Jiangsu University of Science and Technology, Zhenjiang, Jiangsu 212003 (China); Whangbo, Myung-Hwan [North Carolina State University, Raleigh, North Carolina 27695-8204 (United States); Dong, Chuang; Zhang, Qinyu [Key Laboratory of Materials Modification by Laser, Ion and Electron Beams, Ministry of Education, Dalian University of Technology, Dalian 116024 (China)

    2015-12-14

    Single-crystalline epitaxial thin films of PrBaCo{sub 2}O{sub 5.5+δ} (PrBCO) were prepared, and their resistance R(t) under a switching flow of oxidizing and reducing gases were measured as a function of the gas flow time t in the temperature range of 200–800 °C. During the oxidation cycle under O{sub 2}, the PrBCO films exhibit fast oscillations in their dR(t)/dt vs. t plots, which reflect the oxidation processes, Co{sup 2+}/Co{sup 3+} → Co{sup 3+} and Co{sup 3+} → Co{sup 3+}/Co{sup 4+}, that the Co atoms of PrBCO undergo. Each oscillation consists of two peaks, with larger and smaller peaks representing the oxygen/hydrogen diffusion through the (BaO)(CoO{sub 2})(PrO)(CoO{sub 2}) layers of PrBCO via the oxygen-vacancy-exchange mechanism. This finding paves a significant avenue for cathode materials operating in low-temperature solid-oxide-fuel-cell devices and for chemical sensors with wide range of operating temperature.

  4. Sodium immersible high temperature microphone design description

    International Nuclear Information System (INIS)

    Gavin, A.P.; Anderson, T.T.; Janicek, J.J.

    1975-02-01

    Argonne National Laboratory has developed a rugged high-temperature (HT) microphone for use as a sodium-immersed acoustic monitor in Liquid Metal Fast Breeder Reactors (LMFBRs). Microphones of this design have been extensively tested in room temperature water, in air up to 1200 0 F, and in sodium up to 1200 0 F. They have been successfully installed and employed as acoustic monitors in several operating liquid metal systems. The design, construction sequence, calibration, and testing of these microphones are described. 6 references. (U.S.)

  5. High temperature aircraft research furnace facilities

    Science.gov (United States)

    Smith, James E., Jr.; Cashon, John L.

    1992-01-01

    Focus is on the design, fabrication, and development of the High Temperature Aircraft Research Furnace Facilities (HTARFF). The HTARFF was developed to process electrically conductive materials with high melting points in a low gravity environment. The basic principle of operation is to accurately translate a high temperature arc-plasma gas front as it orbits around a cylindrical sample, thereby making it possible to precisely traverse the entire surface of a sample. The furnace utilizes the gas-tungsten-arc-welding (GTAW) process, also commonly referred to as Tungsten-Inert-Gas (TIG). The HTARFF was developed to further research efforts in the areas of directional solidification, float-zone processing, welding in a low-gravity environment, and segregation effects in metals. The furnace is intended for use aboard the NASA-JSC Reduced Gravity Program KC-135A Aircraft.

  6. High-Temperature Graphite/Phenolic Composite

    Science.gov (United States)

    Seal, Ellis C.; Bodepudi, Venu P.; Biggs, Robert W., Jr.; Cranston, John A.

    1995-01-01

    Graphite-fiber/phenolic-resin composite material retains relatively high strength and modulus of elasticity at temperatures as high as 1,000 degrees F. Costs only 5 to 20 percent as much as refractory materials. Fabrication composite includes curing process in which application of full autoclave pressure delayed until after phenolic resin gels. Curing process allows moisture to escape, so when composite subsequently heated in service, much less expansion of absorbed moisture and much less tendency toward delamination. Developed for nose cone of external fuel tank of Space Shuttle. Other potential aerospace applications for material include leading edges, parts of nozzles, parts of aircraft engines, and heat shields. Terrestrial and aerospace applications include structural firewalls and secondary structures in aircraft, spacecraft, and ships. Modified curing process adapted to composites of phenolic with other fiber reinforcements like glass or quartz. Useful as high-temperature circuit boards and electrical insulators.

  7. The metallurgy of high temperature alloys

    Science.gov (United States)

    Tien, J. K.; Purushothaman, S.

    1976-01-01

    Nickel-base, cobalt-base, and high nickel and chromium iron-base alloys are dissected, and their microstructural and chemical components are assessed with respect to the various functions expected of high temperature structural materials. These functions include the maintenance of mechanical integrity over the strain-rate spectrum from creep resistance through fatigue crack growth resistance, and such alloy stability expectations as microstructural coarsening resistance, phase instability resistance and oxidation and corrosion resistance. Special attention will be given to the perennial conflict and trade-off between strength, ductility and corrosion and oxidation resistance. The newest developments in the constitution of high temperature alloys will also be discussed, including aspects relating to materials conservation.

  8. Strain-Modulated Epitaxy

    National Research Council Canada - National Science Library

    Brown, April

    1999-01-01

    Strain-Modulated Epitaxy (SME) is a novel approach, invented at Georgia Tech, to utilize subsurface stressors to control strain and therefore material properties and growth kinetics in the material above the stressors...

  9. High temperature sensors for exhaust diagnosis

    Energy Technology Data Exchange (ETDEWEB)

    Svenningstorp, Henrik

    2000-07-01

    One of the largest problems that we will have to deal with on this planet this millennium is to stop the pollution of our environment. In many of the ongoing works to reduce toxic emissions, gas sensors capable of enduring rough environments and high temperatures, would be a great tool. The different applications where sensors like this would be useful vary between everything from online measurement in the paper industry and food industry to measurement in the exhaust pipe of a car. In my project we have tested Schottky diodes and MlSiCFET sensor as gas sensors operating at high temperatures. The measurement condition in the exhaust pipe of a car is extremely tough, not only is the temperature high and the different gases quite harmful, there are also a lot of particles that can affect the sensors in an undesirable way. In my project we have been testing Schottky diodes and MlSiCFET sensors based on SiC as high temperature sensors, both in the laboratory with simulated exhaust and after a real engine. In this thesis we conclude that these sensors can work in the hostile environment of an engines exhaust. It is shown that when measuring in a gas mixture with a fixed I below one, where the I-value is controlled by the O{sub 2} concentration, a sensor with a catalytic gate metal as sensitive material respond more to the increased O{sub 2} concentration than the increased HC concentration when varying the two correspondingly. A number of different sensors have been tested in simulated exhaust towards NO{sub x}. It was shown that resistivity changes in the thin gate metal influenced the gas response. Tests have been performed where sensors were a part of a SCR system with promising results concerning NH{sub 3} sensitivity. With a working temperature of 300 deg C there is no contamination of the metal surface.

  10. High temperature dielectric function of silicon, germanium and GaN

    Energy Technology Data Exchange (ETDEWEB)

    Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

    2010-07-01

    In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

  11. High Temperature Fluoride Salt Test Loop

    Energy Technology Data Exchange (ETDEWEB)

    Aaron, Adam M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Cunningham, Richard Burns [Univ. of Tennessee, Knoxville, TN (United States); Fugate, David L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Holcomb, David Eugene [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Kisner, Roger A. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Peretz, Fred J. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Robb, Kevin R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Wilson, Dane F. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Yoder, Jr, Graydon L. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

    2015-12-01

    Effective high-temperature thermal energy exchange and delivery at temperatures over 600°C has the potential of significant impact by reducing both the capital and operating cost of energy conversion and transport systems. It is one of the key technologies necessary for efficient hydrogen production and could potentially enhance efficiencies of high-temperature solar systems. Today, there are no standard commercially available high-performance heat transfer fluids above 600°C. High pressures associated with water and gaseous coolants (such as helium) at elevated temperatures impose limiting design conditions for the materials in most energy systems. Liquid salts offer high-temperature capabilities at low vapor pressures, good heat transport properties, and reasonable costs and are therefore leading candidate fluids for next-generation energy production. Liquid-fluoride-salt-cooled, graphite-moderated reactors, referred to as Fluoride Salt Reactors (FHRs), are specifically designed to exploit the excellent heat transfer properties of liquid fluoride salts while maximizing their thermal efficiency and minimizing cost. The FHR s outstanding heat transfer properties, combined with its fully passive safety, make this reactor the most technologically desirable nuclear power reactor class for next-generation energy production. Multiple FHR designs are presently being considered. These range from the Pebble Bed Advanced High Temperature Reactor (PB-AHTR) [1] design originally developed by UC-Berkeley to the Small Advanced High-Temperature Reactor (SmAHTR) and the large scale FHR both being developed at ORNL [2]. The value of high-temperature, molten-salt-cooled reactors is also recognized internationally, and Czechoslovakia, France, India, and China all have salt-cooled reactor development under way. The liquid salt experiment presently being developed uses the PB-AHTR as its focus. One core design of the PB-AHTR features multiple 20 cm diameter, 3.2 m long fuel channels

  12. Thermoelectric properties by high temperature annealing

    Science.gov (United States)

    Ren, Zhifeng (Inventor); Chen, Gang (Inventor); Kumar, Shankar (Inventor); Lee, Hohyun (Inventor)

    2009-01-01

    The present invention generally provides methods of improving thermoelectric properties of alloys by subjecting them to one or more high temperature annealing steps, performed at temperatures at which the alloys exhibit a mixed solid/liquid phase, followed by cooling steps. For example, in one aspect, such a method of the invention can include subjecting an alloy sample to a temperature that is sufficiently elevated to cause partial melting of at least some of the grains. The sample can then be cooled so as to solidify the melted grain portions such that each solidified grain portion exhibits an average chemical composition, characterized by a relative concentration of elements forming the alloy, that is different than that of the remainder of the grain.

  13. High temperature superconductivity and cold fusion

    International Nuclear Information System (INIS)

    Rabinowitz, M.

    1990-01-01

    There are numerous historical and scientific parallels between high temperature superconductivity (HTSC) and the newly emerging field of cold fusion (CF). Just as the charge carrier effective mass plays an important role in SC, the deuteron effective mass may play a vital role in CF. A new theory including effects of proximity, electron shielding, and decreased effective mass of the fusing nuclei can account for the reported CF results. A quantum-gas model that covers the range from low temperature to superhigh temperature SC indicates an increased T c with reduced dimensionality. A reduced dimensionality effect may also enhance CF. A relation is shown between CF and the significant cluster-impact fusion experiments

  14. Positron annihilation studies on high temperature superconductors

    International Nuclear Information System (INIS)

    Sundar, C.S.; Bharathi, A.

    1996-01-01

    A survey of the positron annihilation studies on high temperature superconductors (HTSC), with results drawn mainly from our work, is presented. These include results of the studies on the temperature dependence of positron lifetime across T c , which have been carried out in the whole gamut of oxide superconductors. These experimental results are discussed in conjunction with the results of theoretically calculated positron density distribution, and it is shown that the observed temperature dependence of lifetime is intimately linked to the probing of the Cu-O network by the positrons. Results on the investigation of oxygen defects, which play a crucial role in HTSC, are presented. The most significant contribution of positrons to HTSC relates to the investigation of Fermi surface and the results of these studies, drawn from literature, are indicated. Some of our recent results in other novel superconducting materials, viz., the fullerenes and borocarbides are also presented. (author). 69 refs., 15 figs

  15. High temperature ceramic-tubed reformer

    Science.gov (United States)

    Williams, Joseph J.; Rosenberg, Robert A.; McDonough, Lane J.

    1990-03-01

    The overall objective of the HiPHES project is to develop an advanced high-pressure heat exchanger for a convective steam/methane reformer. The HiPHES steam/methane reformer is a convective, shell and tube type, catalytic reactor. The use of ceramic tubes will allow reaction temperature higher than the current state-of-the-art outlet temperatures of about 1600 F using metal tubes. Higher reaction temperatures increase feedstock conversion to synthesis gas and reduce energy requirements compared to currently available radiant-box type reformers using metal tubes. Reforming of natural gas is the principal method used to produce synthesis gas (primarily hydrogen and carbon monoxide, H2 and CO) which is used to produce hydrogen (for refinery upgrading), methanol, as well as several other important materials. The HiPHES reformer development is an extension of Stone and Webster's efforts to develop a metal-tubed convective reformer integrated with a gas turbine cycle.

  16. Toroidal microinstability studies of high temperature tokamaks

    International Nuclear Information System (INIS)

    Rewoldt, G.; Tang, W.M.

    1989-07-01

    Results from comprehensive kinetic microinstability calculations are presented showing the effects of toroidicity on the ion temperature gradient mode and its relationship to the trapped-electron mode in high-temperature tokamak plasmas. The corresponding particle and energy fluxes have also been computed. It is found that, although drift-type microinstabilities persist over a wide range of values of the ion temperature gradient parameter η i ≡ (dlnT i /dr)/(dlnn i /dr), the characteristic features of the dominant mode are those of the η i -type instability when η i > η ic ∼1.2 to 1.4 and of the trapped-electron mode when η i ic . 16 refs., 7 figs

  17. Tuning piezoelectric properties through epitaxy of La2Ti2O7 and related thin films

    Energy Technology Data Exchange (ETDEWEB)

    Kaspar, Tiffany C.; Hong, Seungbum; Bowden, Mark E.; Varga, Tamas; Yan, Pengfei; Wang, Chongmin; Spurgeon, Steven R.; Comes, Ryan B.; Ramuhalli, Pradeep; Henager, Charles H.

    2018-02-14

    Current piezoelectric sensors and actuators are limited to operating temperatures less than ~200°C due to the low Curie temperature of the piezoelectric material. High temperature piezoelectric materials such as La2Ti2O7 (LTO) would facilitate the development of high-temperature sensors if the piezoelectric coupling coefficient could be maximized. We have deposited epitaxial LTO films on SrTiO3(001), SrTiO3(110), and rutile TiO2(110) substrates by pulsed laser deposition, and show that the crystalline orientation of the LTO film, and thus its piezoelectric coupling direction, can be controlled by epitaxial matching to the substrate. The structure and phase purity of the films were investigated by x-ray diffraction and scanning transmission electron microscopy. To characterize the piezoelectric properties, piezoresponse force microscopy was used to measure the in-plane and out-of-plane piezoelectric coupling in the films. We find that the strength of the out-of-plane piezoelectric coupling can be increased when the piezoelectric crystalline direction is rotated partially out-of-plane via epitaxy. The strongest out-of-plane coupling is observed for LTO/STO(001). Deposition on TiO2(110) results in epitaxial La2/3TiO3, an orthorhombic perovskite of interest as a microwave dielectric material. La2/3TiO3 can be difficult to stabilize in bulk form, and epitaxial deposition has not been previously reported. These results confirm that control of the crystalline orientation of LTO-based materials can increase the out-of-plane strength of its piezoelectric coupling, which can be exploited in piezoelectric devices.

  18. Thin epitaxial silicon detectors

    International Nuclear Information System (INIS)

    Stab, L.

    1989-01-01

    Manufacturing procedures of thin epitaxial surface barriers will be given. Some improvements have been obtained: larger areas, lower leakage currents and better resolutions. New planar epitaxial dE/dX detectors, made in a collaboration work with ENERTEC-INTERTECHNIQUE, and a new application of these thin planar diodes to EXAFS measurements, made in a collaboration work with LURE (CNRS,CEA,MEN) will also be reported

  19. High temperature deformation of silicon steel

    Energy Technology Data Exchange (ETDEWEB)

    Rodriguez-Calvillo, Pablo, E-mail: pablo.rodriguez@ctm.com.es [CTM - Technologic Centre, Materials Technology Area, Manresa, Cataluna (Spain); Department of Materials Science and Metallurgical Engineering, Universidad Politecnica de Cataluna, Barcelona (Spain); Houbaert, Yvan, E-mail: Yvan.Houbaert@UGent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Petrov, Roumen, E-mail: Roumen.Petrov@ugent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Kestens, Leo, E-mail: Leo.kestens@ugent.be [Department of Materials Science and Engineering, University of Ghent (Belgium); Colas, Rafael, E-mail: rafael.colas@uanl.edu.mx [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon (Mexico); Centro de Innovacion, Investigacion y Desarrollo en Ingenieria y Tecnologia, Universidad Autonoma de Nuevo Leon (Mexico)

    2012-10-15

    The microstructure and texture development during high temperature plane strain compression of 2% in weight silicon steel was studied. The tests were carried out at a constant strain rate of 5 s{sup -1} with reductions of 25, 35 and 75% at temperatures varying from 800 to 1100 Degree-Sign C. The changes in microstructure and texture were studied by means of scanning electron microscopy and electron backscattered diffraction. The microstructure close to the surface of the samples was equiaxed, which is attributed to the shear caused by friction, whereas that at the centre of the specimens was made of a mixture of elongated and fine equiaxed grains, the last ones attributed to the action of dynamic recovery followed by recrystallization. It was found that the volume fraction of these equiaxed grains augmented as reduction and temperature increased; a 0.7 volume fraction was accomplished with a 75% reduction at 1100 Degree-Sign C. The texture of the equiaxed and elongated grains was found to vary with the increase of deformation and temperature, as the {gamma}-fibre tends to disappear and the {alpha}-fibre to increase towards the higher temperature range. -- Highlights: Black-Right-Pointing-Pointer The plastic deformation of a silicon containing steel is studied by plane strain compression. Black-Right-Pointing-Pointer Equiaxed and elongated grains develop in different regions of the sample due to recrystallization. Black-Right-Pointing-Pointer Texture, by EBSD, is revealed to be similar in either type of grains.

  20. High temperature deformation of silicon steel

    International Nuclear Information System (INIS)

    Rodríguez-Calvillo, Pablo; Houbaert, Yvan; Petrov, Roumen; Kestens, Leo; Colás, Rafael

    2012-01-01

    The microstructure and texture development during high temperature plane strain compression of 2% in weight silicon steel was studied. The tests were carried out at a constant strain rate of 5 s −1 with reductions of 25, 35 and 75% at temperatures varying from 800 to 1100 °C. The changes in microstructure and texture were studied by means of scanning electron microscopy and electron backscattered diffraction. The microstructure close to the surface of the samples was equiaxed, which is attributed to the shear caused by friction, whereas that at the centre of the specimens was made of a mixture of elongated and fine equiaxed grains, the last ones attributed to the action of dynamic recovery followed by recrystallization. It was found that the volume fraction of these equiaxed grains augmented as reduction and temperature increased; a 0.7 volume fraction was accomplished with a 75% reduction at 1100 °C. The texture of the equiaxed and elongated grains was found to vary with the increase of deformation and temperature, as the γ-fibre tends to disappear and the α-fibre to increase towards the higher temperature range. -- Highlights: ► The plastic deformation of a silicon containing steel is studied by plane strain compression. ► Equiaxed and elongated grains develop in different regions of the sample due to recrystallization. ► Texture, by EBSD, is revealed to be similar in either type of grains.

  1. Energy storage via high temperature superconductivity (SMES)

    Energy Technology Data Exchange (ETDEWEB)

    Mikkonen, R. [Tampere Univ. of Technology (Finland)

    1998-10-01

    The technology concerning high temperature superconductors (HTS) is matured to enabling different kind of prototype applications including SMES. Nowadays when speaking about HTS systems, attention is focused on the operating temperature of 20-30 K, where the critical current and flux density are fairly close to 4.2 K values. In addition by defining the ratio of the energy content of a novel HTS magnetic system and the required power to keep the system at the desired temperature, the optimum settles to the above mentioned temperature range. In the frame of these viewpoints a 5 kJ HTS SMES system has been designed and tested at Tampere University of Technology with a coil manufactured by American Superconductor (AMSC). The HTS magnet has inside and outside diameters of 252 mm and 317 mm, respectively and axial length of 66 mm. It operates at 160 A and carries a total of 160 kA-turns to store the required amount of energy. The effective magnetic inductance is 0.4 H and the peak axial field is 1.7 T. The magnet is cooled to the operating temperature of 20 K with a two stage Gifford-McMahon type cryocooler with a cooling power of 60 W at 77 K and 8 W at 20 K. The magnetic system has been demonstrated to compensate a short term loss of power of a sensitive consumer

  2. Electrothermal evaluation of thick GaN epitaxial layers and AlGaN/GaN high-electron-mobility transistors on large-area engineered substrates

    Science.gov (United States)

    Anderson, Travis J.; Koehler, Andrew D.; Tadjer, Marko J.; Hite, Jennifer K.; Nath, Anindya; Mahadik, Nadeemullah A.; Aktas, Ozgur; Odnoblyudov, Vladimir; Basceri, Cem; Hobart, Karl D.; Kub, Francis J.

    2017-12-01

    AlGaN/GaN high-electron-mobility transistor (HEMT) device layers were grown by metal organic chemical vapor deposition (MOCVD) on commercial engineered QST™ substrates to demonstrate a path to scalable, cost-effective foundry processing while supporting the thick epitaxial layers required for power HEMT structures. HEMT structures on 150 mm Si substrates were also evaluated. The HEMTs on engineered substrates exhibited material quality, DC performance, and forward blocking performance superior to those of the HEMT on Si. GaN device layers up to 15 µm were demonstrated with a wafer bow of 1 µm, representing the thickest films grown on 150-mm-diameter substrates with low bow to date.

  3. Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy

    International Nuclear Information System (INIS)

    Kageyama, Takeo; Miyamoto, Tomoyuki; Ohta, Masataka; Matsuura, Tetsuya; Matsui, Yasutaka; Furuhata, Tatsuya; Koyama, Fumio

    2004-01-01

    A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL) was observed by adding the dilute Sb. The QWs showed an increased PL intensity and narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force microscope study showed a flattened surface morphology by the introduction of the Sb. Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm showed a low threshold current density of 125 A/cm 2 per well for an infinite cavity length

  4. Gasification of high ash, high ash fusion temperature bituminous coals

    Science.gov (United States)

    Liu, Guohai; Vimalchand, Pannalal; Peng, WanWang

    2015-11-13

    This invention relates to gasification of high ash bituminous coals that have high ash fusion temperatures. The ash content can be in 15 to 45 weight percent range and ash fusion temperatures can be in 1150.degree. C. to 1500.degree. C. range as well as in excess of 1500.degree. C. In a preferred embodiment, such coals are dealt with a two stage gasification process--a relatively low temperature primary gasification step in a circulating fluidized bed transport gasifier followed by a high temperature partial oxidation step of residual char carbon and small quantities of tar. The system to process such coals further includes an internally circulating fluidized bed to effectively cool the high temperature syngas with the aid of an inert media and without the syngas contacting the heat transfer surfaces. A cyclone downstream of the syngas cooler, operating at relatively low temperatures, effectively reduces loading to a dust filtration unit. Nearly dust- and tar-free syngas for chemicals production or power generation and with over 90%, and preferably over about 98%, overall carbon conversion can be achieved with the preferred process, apparatus and methods outlined in this invention.

  5. Application of high temperature superconductors for fusion

    International Nuclear Information System (INIS)

    Fietz, W.H.; Heller, R.; Schlachter, S.I.; Goldacker, W.

    2011-01-01

    The use of High Temperature Superconductor (HTS) materials in future fusion machines can increase the efficiency drastically. For ITER, W7-X and JT-60SA the economic benefit of HTS current leads was recognized after a 70 kA HTS current lead demonstrator was designed, fabricated and successfully tested by Karlsruhe Institute of Technology (KIT, which is a merge of former Forschungszentrum Karlsruhe and University of Karlsruhe). For ITER, the Chinese Domestic Agency will provide the current leads as a part of the superconducting feeder system. KIT is in charge of design, construction and test of HTS current leads for W7-X and JT-60SA. For W7-X 14 current leads with a maximum current of 18.2 kA are required that are oriented with the room temperature end at the bottom. JT60-SA will need 26 current leads (20 leads - 20 kA and 6 leads - 25.7 kA) which are mounted in vertical, normal position. These current leads are based on BiSCCO HTS superconductors, demonstrating that HTS material is now state of the art for highly efficient current leads. With respect to future fusion reactors, it would be very promising to use HTS material not only in current leads but also in coils. This would allow a large increase of efficiency if the coils could be operated at temperatures ≥65 K. With such a high temperature it would be possible to omit the radiation shield of the coils, resulting in a less complex cryostat and a size reduction of the machine. In addition less refrigeration power is needed saving investment and operating costs. However, to come to an HTS fusion coil it is necessary to develop low ac loss HTS cables for currents well above 20 kA at high fields well above 10 T. The high field rules BiSCCO superconductors out at temperatures above 50 K, but RE-123 superconductors are promising. The development of a high current, high field RE-123 HTS fusion cable will not be targeted outside fusion community and has to be in the frame of a long term development programme for

  6. Computer code validation by high temperature chemistry

    International Nuclear Information System (INIS)

    Alexander, C.A.; Ogden, J.S.

    1988-01-01

    At least five of the computer codes utilized in analysis of severe fuel damage-type events are directly dependent upon or can be verified by high temperature chemistry. These codes are ORIGEN, CORSOR, CORCON, VICTORIA, and VANESA. With the exemption of CORCON and VANESA, it is necessary that verification experiments be performed on real irradiated fuel. For ORIGEN, the familiar knudsen effusion cell is the best choice and a small piece of known mass and known burn-up is selected and volatilized completely into the mass spectrometer. The mass spectrometer is used in the integral mode to integrate the entire signal from preselected radionuclides, and from this integrated signal the total mass of the respective nuclides can be determined. For CORSOR and VICTORIA, experiments with flowing high pressure hydrogen/steam must flow over the irradiated fuel and then enter the mass spectrometer. For these experiments, a high pressure-high temperature molecular beam inlet must be employed. Finally, in support of VANESA-CORCON, the very highest temperature and molten fuels must be contained and analyzed. Results from all types of experiments will be discussed and their applicability to present and future code development will also be covered

  7. Deformation of high-temperature superconductors

    International Nuclear Information System (INIS)

    Goretta, K.C.; Routbort, J.L.; Miller, D.J.; Chen, N.; Dominguez-Rodriguez, A.; Jimenez-Melendo, M.; De Arellano-Lopez, A.R.

    1994-08-01

    Of the many families of high-temperature superconductors, only the properties of those discovered prior to 1989 - Y-Ba-Cu-O, Tl-Ba(Sr)-Ca-Cu-O, and Bi(Pb)-Sr-Ca-Cu-O - have been studied extensively. Deformation tests have been performed on YBa 2 Cu 3 O x (Y-123), YBa 2 Cu 4 O x (Y-124), TlBa 2 Ca 2 Cu 3 O x (Bi-2223). The tests have revealed that plasticity is generally limited in these compounds and that the rate-controlling diffusional kinetics for creep are very slow. Nevertheless, hot forming has proved to be quite successful for fabrication of bulk high-temperature superconductors, so long as deformation rates are low or large hydrostatic stresses are applied. Steady-state creep data have proved to be useful in designing optimal heat treatments for superconductors and in support of more-fundamental diffusion experiments. The high-temperature superconductors are highly complex oxides, and it is a challenge to understand their deformation responses. In this paper, results of interest and operant creep mechanisms will be reviewed

  8. High temperature cogeneration with thermionic burners

    International Nuclear Information System (INIS)

    Fitzpatrick, G.O.; Britt, E.J.; Dick, R.S.

    1981-01-01

    The thermionic cogeneration combustor was conceived to meet industrial requirements for high-temperature direct heat, typically in the form of gas at temperatures from 800 to 1900 K, while at the same time supplying electricity. The thermionic combustor is entirely self-contained, with heat from the combustion region absorbed by the emitters of thermionic converters to be converted to electric power and the high-temperature reject heat from the converters used to preheat the air used for combustion. Depending on the temperature of the process gas produced, energy savings of around 10% with respect to that used to produce the same amount of electricity and heat without cogeneration are possible with present technology, and savings of up to 20% may be possible with advanced converters. Possible thermionic combustor designs currently under investigation include a configuration in which heat is collected by heat pipes lining the periphery of the combustion region, and a fire-tube converter in which combustion occurs within the cylindrical emitter of each converter. Preliminary component tests of these designs have been encouraging

  9. Medium Deep High Temperature Heat Storage

    Science.gov (United States)

    Bär, Kristian; Rühaak, Wolfram; Schulte, Daniel; Welsch, Bastian; Chauhan, Swarup; Homuth, Sebastian; Sass, Ingo

    2015-04-01

    Heating of buildings requires more than 25 % of the total end energy consumption in Germany. Shallow geothermal systems for indirect use as well as shallow geothermal heat storage systems like aquifer thermal energy storage (ATES) or borehole thermal energy storage (BTES) typically provide low exergy heat. The temperature levels and ranges typically require a coupling with heat pumps. By storing hot water from solar panels or thermal power stations with temperatures of up to 110 °C a medium deep high temperature heat storage (MDHTS) can be operated on relatively high temperature levels of more than 45 °C. Storage depths of 500 m to 1,500 m below surface avoid conflicts with groundwater use for drinking water or other purposes. Permeability is typically also decreasing with greater depth; especially in the crystalline basement therefore conduction becomes the dominant heat transport process. Solar-thermal charging of a MDHTS is a very beneficial option for supplying heat in urban and rural systems. Feasibility and design criteria of different system configurations (depth, distance and number of BHE) are discussed. One system is designed to store and supply heat (300 kW) for an office building. The required boreholes are located in granodioritic bedrock. Resulting from this setup several challenges have to be addressed. The drilling and completion has to be planned carefully under consideration of the geological and tectonical situation at the specific site.

  10. Evaluation of high temperature capacitor dielectrics

    Science.gov (United States)

    Hammoud, Ahmad N.; Myers, Ira T.

    1992-01-01

    Experiments were carried out to evaluate four candidate materials for high temperature capacitor dielectric applications. The materials investigated were polybenzimidazole polymer and three aramid papers: Voltex 450, Nomex 410, and Nomex M 418, an aramid paper containing 50 percent mica. The samples were heat treated for six hours at 60 C and the direct current and 60 Hz alternating current breakdown voltages of both dry and impregnated samples were obtained in a temperature range of 20 to 250 C. The samples were also characterized in terms of their dielectric constant, dielectric loss, and conductivity over this temperature range with an electrical stress of 60 Hz, 50 V/mil present. Additional measurements are underway to determine the volume resistivity, thermal shrinkage, and weight loss of the materials. Preliminary data indicate that the heat treatment of the films slightly improves the dielectric properties with no influence on their breakdown behavior. Impregnation of the samples leads to significant increases in both alternating and direct current breakdown strength. The results are discussed and conclusions made concerning their suitability as high temperature capacitor dielectrics.

  11. High temperature cogeneration with thermionic burners

    Science.gov (United States)

    Fitzpatrick, G. O.; Britt, E. J.; Dick, R. S.

    The thermionic cogeneration combustor was conceived to meet industrial requirements for high-temperature direct heat, typically in the form of gas at temperatures from 800 to 1900 K, while at the same time supplying electricity. The thermionic combustor is entirely self-contained, with heat from the combustion region absorbed by the emitters of thermionic converters to be converted to electric power and the high-temperature reject heat from the converters used to preheat the air used for combustion. Depending on the temperature of the process gas produced, energy savings of around 10% with respect to that used to produce the same amount of electricity and heat without cogeneration are possible with present technology, and savings of up to 20% may be possible with advanced converters. Possible thermionic combustor designs currently under investigation include a configuration in which heat is collected by heat pipes lining the periphery of the combustion region, and a fire-tube converter in which combustion occurs within the cylindrical emitter of each converter. Preliminary component tests of these designs have been encouraging.

  12. The liquid phase epitaxy method for the construction of oriented ZIF-8 thin films with controlled growth on functionalized surfaces

    KAUST Repository

    Shekhah, Osama; Eddaoudi, Mohamed

    2013-01-01

    Highly-oriented ZIF-8 thin films with controllable thickness were grown on an -OH-functionalized Au substrate using the liquid phase epitaxy method at room temperature, as evidenced by SEM and PXRD. The adsorption-desorption properties of the resulting ZIF-8 thin film were investigated for various VOCs using the QCM technique. © The Royal Society of Chemistry 2013.

  13. Surface impedance of epitaxial films Y-Ba-Cu-O in short wave region of range millimetric

    International Nuclear Information System (INIS)

    Vojnovskij, I.V.; Pustyl'nik, O.D.; Boguslavskij, Yu.M.; Shapovalov, A.P.

    1992-01-01

    Epitaxial Y-Ba-Cu-O films on MgO substrate with perfect crystal structure are obtained due to nonaxial magnetron HF-spraying. Temperature dependence of the surface impedance of the films within 66 and 134 GHz frequency is studied. The obtained value of residual surface resistance within 134 GHz frequency (60 mohm) confirms high quality of the films

  14. Rare-earth-ion doped KY(WO4)2 optical waveguides grown by liquid-phase epitaxy

    NARCIS (Netherlands)

    Romanyuk, Y.E.; Apostolopoulos, V.; Utke, U.; Pollnau, Markus

    High-quality KY(WO4)2 thin layers doped with rare-earth-ions were grown using liquid-phase epitaxy. A low-temperature mixture of chlorides was used as the flux and undoped KY(WO4)2 crystals as substrates. The crystalline layers possessed thicknesses up to 10 µm. Passive and active planar waveguiding

  15. High Molecular Weight Polybenzimidazole Membranes for High Temperature PEMFC

    DEFF Research Database (Denmark)

    Yang, Jingshuai; Cleemann, Lars Nilausen; Steenberg, T.

    2014-01-01

    High temperature operation of proton exchange membrane fuel cells under ambient pressure has been achieved by using phosphoric acid doped polybenzimidazole (PBI) membranes. To optimize the membrane and fuel cells, high performance polymers were synthesized of molecular weights from 30 to 94 kDa w...

  16. Direct Observation of High-Temperature Superconductivity in One-Unit-Cell FeSe Films

    International Nuclear Information System (INIS)

    Zhang Wen-Hao; Zhang Jin-Song; Li Fang-Sen; Guo Ming-Hua; Ding Hao; Tang Chen-Jia; Wang Qing-Yan; He Ke; Ji Shuai-Hua; Chen Xi; Sun Yi; Zhao Yan-Fei; Xing Ying; Wang Hui-Chao; Zhang Hui-Min; Peng Jun-Ping; Li Zhi; Wang Meng; Fujita Takeshi; Hirata Akihiko

    2014-01-01

    We prepared one-unit-cell (1-UC) thick FeSe films on insulating SrTiO 3 substrates with non-superconducting FeTe protection layers by molecular beam epitaxy for ex situ studies. By direct transport and magnetic measurements, we provide definitive evidence for high temperature superconductivity in the 1-UC FeSe films with an onset T C above 40 K and an extremely large critical current density J C ∼1.7×10 6 A/cm 2 at 2 K, which are much higher than T C ∼8 K and J C ∼10 4 A/cm 2 for bulk FeSe, respectively. Our work may pave the way to enhancing and tailoring superconductivity by interface engineering. (express letter)

  17. Mechanical properties of concrete for power reactor at high temperatures

    International Nuclear Information System (INIS)

    Kawase, Kiyotaka; Tanaka, Hitoshi; Nakano, Masayuki

    1985-01-01

    The purpose of this study is to investigate the mechanical properties of concrete for power reactor at high temperature. This paper presents the creep behavior of concrete at high temperature and the cause by which a specified aggregate is broken at a specified high temperature. The creep coefficient at high temperature is smaller than that at ordinary temperature. (author)

  18. Thermodynamic Temperatures of High-Temperature Fixed Points: Uncertainties Due to Temperature Drop and Emissivity

    Science.gov (United States)

    Castro, P.; Machin, G.; Bloembergen, P.; Lowe, D.; Whittam, A.

    2014-07-01

    This study forms part of the European Metrology Research Programme project implementing the New Kelvin to assign thermodynamic temperatures to a selected set of high-temperature fixed points (HTFPs), Cu, Co-C, Pt-C, and Re-C. A realistic thermal model of these HTFPs, developed in finite volume software ANSYS FLUENT, was constructed to quantify the uncertainty associated with the temperature drop across the back wall of the cell. In addition, the widely applied software package, STEEP3 was used to investigate the influence of cell emissivity. The temperature drop, , relates to the temperature difference due to the net loss of heat from the aperture of the cavity between the back wall of the cavity, viewed by the thermometer, defining the radiance temperature, and the solid-liquid interface of the alloy, defining the transition temperature of the HTFP. The actual value of can be used either as a correction (with associated uncertainty) to thermodynamic temperature evaluations of HTFPs, or as an uncertainty contribution to the overall estimated uncertainty. In addition, the effect of a range of furnace temperature profiles on the temperature drop was calculated and found to be negligible for Cu, Co-C, and Pt-C and small only for Re-C. The effective isothermal emissivity is calculated over the wavelength range from 450 nm to 850 nm for different assumed values of surface emissivity. Even when furnace temperature profiles are taken into account, the estimated emissivities change only slightly from the effective isothermal emissivity of the bare cell. These emissivity calculations are used to estimate the uncertainty in the temperature assignment due to the uncertainty in the emissivity of the blackbody.

  19. High temperature gas cooled nuclear reactor

    International Nuclear Information System (INIS)

    Hosegood, S.B.; Lockett, G.E.

    1975-01-01

    For high-temperature gas cooled reactors it is considered advantageous to design the core so that the moderator blocks can be removed and replaced by some means of standpipes normally situated in the top of the reactor vessel. An arrangement is here described to facilitate these operations. The blocks have end faces shaped as irregular hexagons with three long sides of equal length and three short sides also of equal length, one short side being located between each pair of adjacent long sides, and the long sides being inclined towards one another at 60 0 . The block defines a number of coolant channels located parallel to its sides. Application of the arrangement to a high temperature gas-cooled reactor with refuelling standpipes is described. The standpipes are located in the top of the reactor vessel above the tops of the columns and are disposed coaxially above the hexagonal channels, with diameters that allow the passage of the blocks. (U.K.)

  20. Atomic processes in high temperature plasmas

    International Nuclear Information System (INIS)

    Hahn, Y.

    1990-03-01

    Much theoretical and experimental efforts have been expended in recent years to study those atomic processes which are specially relevant to understanding high temperature laboratory plasmas. For magnetically confined fusion plasmas, the temperature range of interest spans from the hundreds of eV at plasma edges to 10 keV at the center of the plasma, where most of the impurity ions are nearly fully ionized. These highly stripped ions interact strongly with electrons in the plasma, leading to further excitation and ionization of the ions, as well as electron capture. Radiations are emitted during these processes, which easily escape to plasma container walls, thus cooling the plasma. One of the dominant modes of radiation emission has been identified with dielectronic recombination. This paper reviews this work

  1. Metallic Membranes for High Temperature Hydrogen Separation

    DEFF Research Database (Denmark)

    Ma, Y.H.; Catalano, Jacopo; Guazzone, Federico

    2013-01-01

    membrane fabrication methods have matured over the last decades, and the deposition of very thin films (1–5 µm) of Pd over porous ceramics or modified porous metal supports is quite common. The H2 permeances and the selectivities achieved at 400–500 °C were in the order of 50–100 Nm3/m/h/bar0.5 and greater......Composite palladium membranes have extensively been studied in laboratories and, more recently, in small pilot industrial applications for the high temperature separation of hydrogen from reactant mixtures such as water-gas shift (WGS) reaction or methane steam reforming (MSR). Composite Pd...... than 1000, respectively. This chapter describes in detail composite Pd-based membrane preparation methods, which consist of the grading of the support and the deposition of the dense metal layer, their performances, and their applications in catalytic membrane reactors (CMRs) at high temperatures (400...

  2. Refractiry metal monocrystals in high temperature thermometry

    International Nuclear Information System (INIS)

    Kuritnyk, I.P.

    1988-01-01

    The regularities of changes in thermoelectric properties of refractory metals in a wide temperature range (300-2300 K) depending on their structural state and impurities, are generalized. It is found that the main reasons for changes in thermo-e.m.f. of refractory metals during their operation in various media are diffusion processes and local microvoltages appearing in nonhomogeneous thermoelectrodes. It is shown that microstructure formation and control of impurities in thermometric materials permit to improve considerably the metrologic parameters of thermal transformers. Tungsten and molybdenum with monocrystalline structure with their high stability of properties, easy to manufacture and opening new possibilities in high-temperature contact measurement are used in thermometry for the first time

  3. Preparation of silver doped high temperature superconductors

    International Nuclear Information System (INIS)

    Stavek, Jiri; Zapletal, Vladimir

    1989-01-01

    High temperature superconductors were prepared by the controlled double-jet precipitation to manipulate the chemical composition, composition gradients, average grain size, grain size distribution, and other factors which contribute to the actual properties and performance of HTSC. The cations (Y-Ba-Cu or Bi-Pb-Ca-Sr-Cu) and oxalic anions solutions were simultaneously separately introduced to the crystallizer with a stirred solution of gelatin under conditions where the temperature, excess of oxalic anions in solution, pH, reactant addition rate, and other reaction conditions were tightly controlled to prepare the high sinterability powder. To increase the sinterability of submicron particles of produced precursor, the silver ions were introduced at the end of the controlled double-jet precipitation. This approach improves the electrical and mechanical properties of produced HTSC specimens. The controlled double jet precipitation provides a viable technique for preparation of oxide superconductors and the process is amenable for scaling up

  4. High Temperature Phenomena in Shock Waves

    CERN Document Server

    2012-01-01

    The high temperatures generated in gases by shock waves give rise to physical and chemical phenomena such as molecular vibrational excitation, dissociation, ionization, chemical reactions and inherently related radiation. In continuum regime, these processes start from the wave front, so that generally the gaseous media behind shock waves may be in a thermodynamic and chemical non-equilibrium state. This book presents the state of knowledge of these phenomena. Thus, the thermodynamic properties of high temperature gases, including the plasma state are described, as well as the kinetics of the various chemical phenomena cited above. Numerous results of measurement and computation of vibrational relaxation times, dissociation and reaction rate constants are given, and various ionization and radiative mechanisms and processes are presented. The coupling between these different phenomena is taken into account as well as their interaction with the flow-field. Particular points such as the case of rarefied flows an...

  5. High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

    Science.gov (United States)

    Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

    2018-05-01

    High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

  6. High Temperature Studies of La-Monazite

    Science.gov (United States)

    2004-07-01

    Hay, E. Boakeye, M. D. Petry, Y. Berta, K. Von Lehmden, and J. Welch, " 5 A. Meldrum , L. A. Boatner, and R. C. Ewing, "Electron-Irradiation-Induced... Meldrum , L. A. Boatner, and R. C. Ewing, "A Comparison of Radiation Alumina-based Fiber for High Temperature Composite Reinforcement," Ceram. Eng... acid . The processing included procedures that allowed the La/P ratio to be controlled to be very close to the stoichiometric value of unity (within less

  7. Passivation Of High-Temperature Superconductors

    Science.gov (United States)

    Vasquez, Richard P.

    1991-01-01

    Surfaces of high-temperature superconductors passivated with native iodides, sulfides, or sulfates formed by chemical treatments after superconductors grown. Passivating compounds nearly insoluble in and unreactive with water and protect underlying superconductors from effects of moisture. Layers of cuprous iodide and of barium sulfate grown. Other candidate passivating surface films: iodides and sulfides of bismuth, strontium, and thallium. Other proposed techniques for formation of passivating layers include deposition and gas-phase reaction.

  8. High Temperature Perforating System for Geothermal Applications

    Energy Technology Data Exchange (ETDEWEB)

    Smart, Moises E. [Schlumberger Technology Corporation, Sugar Land, TX (United States)

    2017-02-28

    The objective of this project is to develop a perforating system consisting of all the explosive components and hardware, capable of reliable performance in high temperatures geothermal wells (>200 ºC). In this light we will focused on engineering development of these components, characterization of the explosive raw powder and developing the internal infrastructure to increase the production of the explosive from laboratory scale to industrial scale.

  9. Intermetallic-Based High-Temperature Materials

    Energy Technology Data Exchange (ETDEWEB)

    Sikka, V.K.

    1999-04-25

    The intermetallic-based alloys for high-temperature applications are introduced. General characteristics of intermetallics are followed by identification of nickel and iron aluminides as the most practical alloys for commercial applications. An overview of the alloy compositions, melting processes, and mechanical properties for nickel and iron aluminizes are presented. The current applications and commercial producers of nickel and iron aluminizes are given. A brief description of the future prospects of intermetallic-based alloys is also given.

  10. The modular high temperature gas cooled reactor

    International Nuclear Information System (INIS)

    Lutz, D.E.; Lipps, A.J.

    1984-01-01

    Due to relatively high operating temperatures, the gas-cooled reactor has the potential to serve a wide variety of energy applications. This paper discusses the energy applications which can be served by the modular HTGR, the magnitude of the potential markets, and the HTGR product cost incentives relative to fossil fuel competition. Advantages of the HTGR modular systems are presented along with a description of the design features and performance characteristics of the current reference HTGR modular systems

  11. Establishment of Harrop, High-Temperature Viscometer

    Energy Technology Data Exchange (ETDEWEB)

    Schumacher, R.F.

    1999-11-05

    This report explains how the Harrop, High-Temperature Viscometer was installed, calibrated, and operated. This report includes assembly and alignment of the furnace, viscometer, and spindle, and explains the operation of the Brookfield Viscometer, the Harrop furnace, and the UDC furnace controller. Calibration data and the development of the spindle constant from NIST standard reference glasses is presented. A simple operational procedure is included.

  12. Apparatus for distilling dry solids. [high temperature

    Energy Technology Data Exchange (ETDEWEB)

    Constant, M

    1873-09-09

    In the proposed system under the action of high temperature, the vapors commence to form, and on account of their density go toward the lower part of the retort, where they take the place of air; then they find the exit prepared for them and run out literally by their weight as they are formed and enter the coil where all that can are completely condensed into oil.

  13. Internal modes in high-temperature plasmas

    International Nuclear Information System (INIS)

    Crew, G.B.

    1983-02-01

    The linear stability of current-carrying toroidal plamsas is examined to determine the possibility of exciting global internal modes. The ideal magnetohydrodynamic (MHD) theory provides a useful framework for the analysis of these modes, which involve a kinking of the central portion of the plasma column. Non-ideal effects can also be important, and these are treated for high-temperature regimes where the plasma is collisionless

  14. Fabrication and examination of epitaxial HTSC/isolator thin films on sapphire substrates for application in high frequency devices; Herstellung und Untersuchung von epitaktischen HTSL/Isolator-Schichten auf Saphirsubstraten zur Anwendung in HF-Bauelementen

    Energy Technology Data Exchange (ETDEWEB)

    Kittel, H.

    1995-10-01

    The use of high temperature superconductors (HTSC) like YBCO with distinct lower surface resistance compared to normal conductors allows miniaturisation of high frequency (HF) circuits. The object of this work was the fabrication of YBCO thin films on low loss sapphire substrates applicable for stripline devices. To induce epitaxial growth and to avoid chemical reaction at the film-substrate boundary buffer layers were investigated. The examination of the growth properties and especially of the surface impedance has been allotted particular importance. In contrast to CaTiO{sub 3} it was possible to deposit CeO{sub 2}-buffer layers in direct growth up to a thickness of about 30 nm without cracks. The films show all growth properties required and even Laue-oscillations being a feature of high quality growth enabling the determination of film thickness distribution without destruction. The YBCO growth-, transport- and HF-properties meet the ones of YBCO films on standard substrates. A remarkable result is that the mosaic distribution of the CEO film, itself strongly dependend on film thickness, does not influence that of the YBCO film considerably. Rather it changes its shape subsequently due to YBCO deposition. A further particularity in contrast to deposition on standard substrates is the need to adjust the substrate heater tempeature for deposition of YBCO films with thicknesses {>=}300 nm needed for HF application. To demonstrate their usefullness some stripline devices like planar coils and side coupled filters have been fabricated and characterised. (orig.)

  15. Structural and morphological properties of GaN buffer layers grown by ammonia molecular beam epitaxy on SiC substrates for AlGaN/GaN high electron mobility transistors

    International Nuclear Information System (INIS)

    Corrion, A. L.; Poblenz, C.; Wu, F.; Speck, J. S.

    2008-01-01

    The impact of growth conditions on the surface morphology and structural properties of ammonia molecular beam epitaxy GaN buffers layers on SiC substrates was investigated. The threading dislocation (TD) density was found to decrease with decreasing NH 3 :Ga flux ratio, which corresponded to an increase in surface roughness and reduction in residual compressive lattice mismatch stress. Furthermore, the dislocation density and compressive stress decreased for increasing buffer thickness. TD inclination was proposed to account for these observations. Optimized surface morphologies were realized at high NH 3 :Ga flux ratios and were characterized by monolayer-high steps, spiral hillocks, and pyramidal mounds, with rms roughness of ∼1.0 nm over 2x2 μm 2 atomic force microscopy images. Smooth surface morphologies were realized over a large range of growth temperatures and fluxes, and growth rates of up to 1 μm/h were achieved. TD densities in the buffers as low as 3x10 9 cm -2 were demonstrated. These buffers were highly insulating and were used in recently reported AlGaN/GaN HEMTs with power densities of >11 W/mm at 4 and 10 GHz

  16. High-electron-mobility GaN grown on free-standing GaN templates by ammonia-based molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Kyle, Erin C. H., E-mail: erinkyle@umail.ucsb.edu; Kaun, Stephen W.; Burke, Peter G.; Wu, Feng; Speck, James S. [Materials Department, University of California, Santa Barbara, California 93106 (United States); Wu, Yuh-Renn [Institute of Photonics and Optoelectronics, and Department of Electrical Engineering, National Taiwan University, Taipei City 10617, Taiwan (China)

    2014-05-21

    The dependence of electron mobility on growth conditions and threading dislocation density (TDD) was studied for n{sup −}-GaN layers grown by ammonia-based molecular beam epitaxy. Electron mobility was found to strongly depend on TDD, growth temperature, and Si-doping concentration. Temperature-dependent Hall data were fit to established transport and charge-balance equations. Dislocation scattering was analyzed over a wide range of TDDs (∼2 × 10{sup 6} cm{sup −2} to ∼2 × 10{sup 10} cm{sup −2}) on GaN films grown under similar conditions. A correlation between TDD and fitted acceptor states was observed, corresponding to an acceptor state for almost every c lattice translation along each threading dislocation. Optimized GaN growth on free-standing GaN templates with a low TDD (∼2 × 10{sup 6} cm{sup −2}) resulted in electron mobilities of 1265 cm{sup 2}/Vs at 296 K and 3327 cm{sup 2}/Vs at 113 K.

  17. High-temperature flaw assessment procedure

    International Nuclear Information System (INIS)

    Ruggles, M.B.; Takahashi, Y.; Ainsworth, R.A.

    1989-08-01

    The current program represents a joint effort between the Electric Power Research Institute (EPRI) in the USA, the Central Research Institute of Electric Power Industry (CRIEPI) in Japan, and the Central Electricity Generating Board (CEGB) in the UK. The goal is to develop an interim high-temperature flaw assessment procedure for high-temperature reactor components. This is to be accomplished through exploratory experimental and analytical studies of high-temperature crack growth. The state-of-the-art assessment and the fracture mechanics database for both types 304 and 316 stainless steels, completed in 1988, serve as a foundation for the present work. Work in the three participating organizations is progressing roughly on schedule. Results to-date are presented in this document. Fundamental tests results are discussed in Section 2. Section 3 focuses on results of exploratory subcritical crack growth tests. Progress in subcritical crack growth modeling is reported in Section 4. Exploratory failure tests are outlined in Section 5. 21 refs., 70 figs., 7 tabs

  18. Elasticity of fluorite at high temperatures

    Science.gov (United States)

    Eke, J.; Tennakoon, S.; Mookherjee, M.

    2017-12-01

    Fluorite (CaF2) is a simple halide with cubic space group symmetry (Fm-3m) and is often used as an internal pressure calibrant in moderate high-pressure/high-temperature experiments [1]. In order to gain insight into the elastic behavior of fluorite, we have conducted Resonant Ultrasound Spectroscopy (RUS) on a single crystal of fluorite with rectangular parallelepiped geometry. Using single crystal X-ray diffraction, we aligned the edges of the rectangular parallelepiped with [-1 1 1], [-1 1 -2], and [-1 -1 0] crystallographic directions. We conducted the RUS measurements up to 620 K. RUS spectra are influenced by the geometry, density, and the full elastic moduli tensor of the material. In our high-temperature RUS experiments, the geometry and density were constrained using thermal expansion from previous studies [2]. We determined the elasticity by minimizing the difference between observed resonance and calculated Eigen frequency using Rayleigh-Ritz method [3]. We found that at room temperature, the single crystal elastic moduli for fluorite are 170, 49, and 33 GPa for C11, C12, and C44 respectively. At room temperatures, the aggregate bulk modulus (K) is 90 GPa and the shear modulus (G) is 43 GPa. We note that the elastic moduli and sound wave velocities decrease linearly as a function of temperature with dVP /dT and dVS /dT being -9.6 ×10-4 and -5.0 ×10-4 km/s/K respectively. Our high-temperature RUS results are in good agreement with previous studies on fluorite using both Ultrasonic methods and Brillouin scattering [4,5]. Acknowledgement: This study is supported by US NSF awards EAR-1639552 and EAR-1634422. References: [1] Speziale, S., Duffy, T. S. 2002, Phys. Chem. Miner., 29, 465-472; [2] Roberts, R. B., White, G. K., 1986, J. Phys. C: Solid State Phys., 19, 7167-7172. [3] Migliori, A., Maynard, J. D., 2005, Rev. Sci. Instrum., 76, 121301. [4] Catlow, C. R. A., Comins, J. D., Germano, F. A., Harley, R. T., Hayes, W., 1978, J. Phys. C Solid State Phys

  19. New Crystal-Growth Methods for Producing Lattice-Matched Substrates for High-Temperature Superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Boatner, L.A.

    2008-06-24

    This effort addressed the technical problem of identifying and growing, on a commercial scale, suitable single-crystal substrates for the subsequent deposition of epitaxial thin films of high temperature semiconductors such as GaN/AlN. The lack of suitable lattice-matched substrate materials was one of the major problem areas in the development of semiconducting devices for use at elevated temperatures as well as practical opto-electronic devices based on Al- and GaN technology. Such lattice-matched substrates are necessary in order to reduce or eliminate high concentrations of defects and dislocations in GaN/AlN and related epitaxial thin films. This effort concentrated, in particular, on the growth of single crystals of ZnO for substrate applications and it built on previous ORNL experience in the chemical vapor transport growth of large single crystals of zinc oxide. This combined expertise in the substrate growth area was further complemented by the ability of G. Eres and his collaborators to deposit thin films of GaN on the subject substrates and the overall ORNL capability for characterizing the quality of such films. The research effort consisted of research on the growth of two candidate substrate materials in conjunction with concurrent research on the growth and characterization of GaN films, i.e. the effort combined bulk crystal growth capabilities in the area of substrate production at both ORNL and the industrial partner, Commercial Crystal Growth Laboratories (CCL), Naples, Florida, with the novel thin-film deposition techniques previously developed in the ORNL SSD.

  20. Bromine doping of CdTe and CdMnTe epitaxial layers grown by molecular beam epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Waag, A. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Scholl, S. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Schierstedt, K. von (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Hommel, D. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Landwehr, G. (Physikalisches Inst. der Univ. Wuerzburg (Germany)); Bilger, G. (Zentrum fuer Sonnenenergie und Wasserstoff-Forschung, Stuttgart (Germany))

    1993-03-01

    We report on the n-type doping of CdTe and CdMnTe with bormine as a novel dopant material. /the thin films were grown by molecular beam epitaxy. ZnBr[sub 2] was used as a source material for the n-type doping. Free carrier concentrations at room temperature of up to 2.8x10[sup 18] cm[sup -3] could be readily obtained for both CdTe as well as CdMnTe thin films with Mn concentrations below 10%. This is to our knowledge the highest value ever obtained for the dilute magnetic semiconductor CdMnTe. For ZnBr[sub 2] source temperatures up to 60 C - corresponding to a free carrier concentration of (2-3)x10[sup 18] cm[sup -3] - the free carrier concentration of the epitaxial film increases with ZnBr[sub 2] source temperature. For higher ZnBr[sub 2] source temperatures compensation becomes dominant, which is indicated by a steep decrease of the free carrier concentration with increasing ZnBr[sub 2] source temperature. In addition the carrier mobility decreases drastically for such high dopant fluxes. A model of bromine incorporation is proposed. (orig.)