WorldWideScience

Sample records for high resistance junctions

  1. High-performance 4H-SiC junction barrier Schottky diodes with double resistive termination extensions

    International Nuclear Information System (INIS)

    Zheng Liu; Zhang Feng; Liu Sheng-Bei; Dong Lin; Liu Xing-Fang; Liu Bin; Yan Guo-Guo; Wang Lei; Zhao Wan-Shun; Sun Guo-Sheng; He Zhi; Fan Zhong-Chao; Yang Fu-Hua

    2013-01-01

    4H-SiC junction barrier Schottky (JBS) diodes with a high-temperature annealed resistive termination extension (HARTE) are designed, fabricated and characterized in this work. The differential specific on-state resistance of the device is as low as 3.64 mΩ·cm 2 with a total active area of 2.46 × 10 −3 cm 2 . Ti is the Schottky contact metal with a Schottky barrier height of 1.08 V and a low onset voltage of 0.7 V. The ideality factor is calculated to be 1.06. Al implantation annealing is performed at 1250°C in Ar, while good reverse characteristics are achieved. The maximum breakdown voltage is 1000 V with a leakage current of 9 × 10 −5 A on chip level. These experimental results show good consistence with the simulation results and demonstrate that high-performance 4H-SiC JBS diodes can be obtained based on the double HARTE structure. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Harmonic synchronization in resistively coupled Josephson junctions

    International Nuclear Information System (INIS)

    Blackburn, J.A.; Gronbech-Jensen, N.; Smith, H.J.T.

    1994-01-01

    The oscillations of two resistively coupled Josephson junctions biased only by a single dc current source are shown to lock harmonically in a 1:2 mode over a significant range of bias current, even when the junctions are identical. The dependence of this locking on both junction and coupling parameters is examined, and it is found that, for this particular two-junction configuration, 1:1 locking can never occur, and also that a minimum coupling coefficient is needed to support harmonic locking. Some issues related to subharmonic locking are also discussed

  3. Resistance switch employing a simple metal nanogap junction

    International Nuclear Information System (INIS)

    Naitoh, Yasuhisa; Horikawa, Masayo; Abe, Hidekazu; Shimizu, Tetsuo

    2006-01-01

    In recent years, several researchers have reported the occurrence of reversible resistance switching effects in simple metal nanogap junctions. A large negative resistance is observed in the I-V characteristics of such a junction when high-bias voltages are applied. This phenomenon is characteristic behaviour on the nanometre scale; it only occurs for gap widths slightly under 13 nm. Furthermore, such a junction exhibits a non-volatile resistance hysteresis when the bias voltage is reduced very rapidly from a high level to around 0 V, and when the bias voltage is reduced slowly. This non-volatile resistance change occurs as a result of changes in the gap width between the metal electrodes, brought about by the applied bias voltage

  4. Ultra-low switching energy and scaling in electric-field-controlled nanoscale magnetic tunnel junctions with high resistance-area product

    Energy Technology Data Exchange (ETDEWEB)

    Grezes, C.; Alzate, J. G.; Cai, X.; Wang, K. L. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Ebrahimi, F.; Khalili Amiri, P. [Department of Electrical Engineering, University of California, Los Angeles, California 90095 (United States); Inston, Inc., Los Angeles, California 90024 (United States); Katine, J. A. [HGST, Inc., San Jose, California 95135 (United States); Langer, J.; Ocker, B. [Singulus Technologies AG, Kahl am Main 63796 (Germany)

    2016-01-04

    We report electric-field-induced switching with write energies down to 6 fJ/bit for switching times of 0.5 ns, in nanoscale perpendicular magnetic tunnel junctions (MTJs) with high resistance-area product and diameters down to 50 nm. The ultra-low switching energy is made possible by a thick MgO barrier that ensures negligible spin-transfer torque contributions, along with a reduction of the Ohmic dissipation. We find that the switching voltage and time are insensitive to the junction diameter for high-resistance MTJs, a result accounted for by a macrospin model of purely voltage-induced switching. The measured performance enables integration with same-size CMOS transistors in compact memory and logic integrated circuits.

  5. Accurate measurement of junctional conductance between electrically coupled cells with dual whole-cell voltage-clamp under conditions of high series resistance.

    Science.gov (United States)

    Hartveit, Espen; Veruki, Margaret Lin

    2010-03-15

    Accurate measurement of the junctional conductance (G(j)) between electrically coupled cells can provide important information about the functional properties of coupling. With the development of tight-seal, whole-cell recording, it became possible to use dual, single-electrode voltage-clamp recording from pairs of small cells to measure G(j). Experiments that require reduced perturbation of the intracellular environment can be performed with high-resistance pipettes or the perforated-patch technique, but an accompanying increase in series resistance (R(s)) compromises voltage-clamp control and reduces the accuracy of G(j) measurements. Here, we present a detailed analysis of methodologies available for accurate determination of steady-state G(j) and related parameters under conditions of high R(s), using continuous or discontinuous single-electrode voltage-clamp (CSEVC or DSEVC) amplifiers to quantify the parameters of different equivalent electrical circuit model cells. Both types of amplifiers can provide accurate measurements of G(j), with errors less than 5% for a wide range of R(s) and G(j) values. However, CSEVC amplifiers need to be combined with R(s)-compensation or mathematical correction for the effects of nonzero R(s) and finite membrane resistance (R(m)). R(s)-compensation is difficult for higher values of R(s) and leads to instability that can damage the recorded cells. Mathematical correction for R(s) and R(m) yields highly accurate results, but depends on accurate estimates of R(s) throughout an experiment. DSEVC amplifiers display very accurate measurements over a larger range of R(s) values than CSEVC amplifiers and have the advantage that knowledge of R(s) is unnecessary, suggesting that they are preferable for long-duration experiments and/or recordings with high R(s). Copyright (c) 2009 Elsevier B.V. All rights reserved.

  6. Electron-beam damaged high-temperature superconductor Josephson junctions

    International Nuclear Information System (INIS)

    Pauza, A.J.; Booij, W.E.; Herrmann, K.; Moore, D.F.; Blamire, M.G.; Rudman, D.A.; Vale, L.R.

    1997-01-01

    Results are presented on the fabrication and characterization of high critical temperature Josephson junctions in thin films of YBa 2 Cu 3 O 7-δ produced by the process of focused electron-beam irradiation using 350 keV electrons. The junctions so produced have uniform spatial current densities, can be described in terms of the resistive shunted junction model, and their current densities can be tailored for a given operating temperature. The physical properties of the damaged barrier can be described as a superconducting material of either reduced or zero critical temperature (T c ), which has a length of ∼15nm. The T c reduction is caused primarily by oxygen Frenkel defects in the Cu - O planes. The large beam currents used in the fabrication of the junctions mean that the extent of the barrier is limited by the incident electron-beam diameter, rather than by scattering within the film. The properties of the barrier can be calculated using a superconductor/normal/superconductor (SNS) junction model with no boundary resistance. From the SNS model, we can predict the scaling of the critical current resistance (I c R n ) product and gain insight into the factors controlling the junction properties, T c , and reproducibility. From the measured I c R n scaling data, we can predict the I c R n product of a junction at a given operating temperature with a given current density. I c R n products of ∼2mV can be achieved at 4.2 K. The reproducibility of several junctions in a number of samples can be characterized by the ratio of the maximum-to-minimum critical currents on the same substrate of less than 1.4. Stability over several months has been demonstrated at room and refrigerator temperatures (297 and 281 K) for junctions that have been initially over damaged and then annealed at temperatures ∼380K. (Abstract Truncated)

  7. Overlap junctions for high coherence superconducting qubits

    Science.gov (United States)

    Wu, X.; Long, J. L.; Ku, H. S.; Lake, R. E.; Bal, M.; Pappas, D. P.

    2017-07-01

    Fabrication of sub-micron Josephson junctions is demonstrated using standard processing techniques for high-coherence, superconducting qubits. These junctions are made in two separate lithography steps with normal-angle evaporation. Most significantly, this work demonstrates that it is possible to achieve high coherence with junctions formed on aluminum surfaces cleaned in situ by Ar plasma before junction oxidation. This method eliminates the angle-dependent shadow masks typically used for small junctions. Therefore, this is conducive to the implementation of typical methods for improving margins and yield using conventional CMOS processing. The current method uses electron-beam lithography and an additive process to define the top and bottom electrodes. Extension of this work to optical lithography and subtractive processes is discussed.

  8. Negative differential resistance in Josephson junctions coupled to a cavity

    DEFF Research Database (Denmark)

    Pedersen, Niels Falsig; Filatrella, G.; Pierro, V.

    2014-01-01

    or external – is often used. A cavity may also induce a negative differential resistance region at the lower side of the resonance frequency. We investigate the dynamics of Josephson junctions with a negative differential resistance in the quasi particle tunnel current, i.e. in the McCumber curve. We find...

  9. High quality factor HTS Josephson junctions on low loss substrates

    Energy Technology Data Exchange (ETDEWEB)

    Stornaiuolo, D; Longobardi, L; Massarotti, D; Barone, A; Tafuri, F [CNR-SPIN Napoli, Complesso Universitario di Monte Sant' Angelo, via Cinthia, 80126 Napoli (Italy); Papari, G; Carillo, F [NEST, CNR-NANO and Scuola Normale Superiore, Piazza San Silvestro 12, 56127 Pisa (Italy); Cennamo, N [Dipartimento Ingegneria dell' Informazione, Seconda Universita degli Studi di Napoli, via Roma 29, 81031 Aversa (Italy)

    2011-04-15

    We have extended the off-axis biepitaxial technique to produce YBCO grain boundary junctions on low loss substrates. Excellent transport properties have been reproducibly found, with remarkable values of the quality factor I{sub c}R{sub n} (with I{sub c} the critical current and R{sub n} the normal state resistance) above 10 mV, far higher than the values commonly reported in the literature for high temperature superconductor (HTS) based Josephson junctions. The outcomes are consistent with a picture of a more uniform grain boundary region along the current path. This work supports a possible implementation of grain boundary junctions for various applications including terahertz sensors and HTS quantum circuits in the presence of microwaves.

  10. Negative Differential Resistance in Atomic Carbon Chain-Graphene Junctions

    International Nuclear Information System (INIS)

    An Liping; Liu Chunmei; Liu Nianhua

    2012-01-01

    We investigate the electronic transport properties of atomic carbon chain-graphene junctions by using the density-functional theory combining with the non-equilibrium Green's functions. The results show that the transport properties are sensitively dependent on the contact geometry of carbon chain. From the calculated I-V curve we find negative differential resistance (NDR) in the two types of junctions. The NDR can be considered as a result of molecular orbitals moving related to the bias window. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. All high T sub c edge junctions and SQUIDs

    Energy Technology Data Exchange (ETDEWEB)

    Laibowitz, R.B.; Koch, R.H.; Gupta, A.; Koren, G.; Gallagher, W.J.; Foglietti, V.; Oh, B.; Viggiano, J.M. (IBM Research Division, P.O. Box 218, Yorktown Heights, New York 10598 (US))

    1990-02-12

    We present the first observations of superconducting quantum interference in multilevel, all high {ital T}{sub {ital c}}, lithographically patterned edge junction structures. The current-voltage characteristics are nonhysteretic and have well-defined critical currents. The dynamic resistance is independent of current above the critical current. These devices show periodic sensitivity to magnetic fields and low levels of magnetic hysteresis up to temperatures around 60 K.

  12. Roles of inter-SWCNT junctions in resistive humidity response

    International Nuclear Information System (INIS)

    Zhang, Kang; Zou, Jianping; Zhang, Qing

    2015-01-01

    As a promising chemiresistor for gas sensing, the single-walled carbon nanotube (SWCNT) network has not yet been fully utilized for humidity detection. In this work, it is found that as humidity increases from 10% to 85%, the resistance of as-grown SWCNT networks first decreases and then increases. This non-monotonic resistive response to humidity limits their sensing capabilities. The competition between SWCNT resistance and inter-tube junction resistance changes is then found to be responsible for the non-monotonic resistive humidity responses. Moreover, creating sp"3 scattering centers on the SWCNT sidewall by monovalent functionalization of four-bromobenzene diazonium tetrafluoroborate is shown to be capable of eliminating the influence from the inter-tube junctions, resulting in a continuous resistance drop as humidity increases from 10% to 85%. Our results revealed the competing resistive humidity sensing process in as-grown SWCNT networks, which could also be helpful in designing and optimizing as-grown SWCNT networks for humidity sensors and other gas sensors. (paper)

  13. Terahertz Responses of Intrinsic Josephson Junctions in High TC Superconductors

    International Nuclear Information System (INIS)

    Wang, H. B.; Wu, P. H.; Yamashita, T.

    2001-01-01

    High frequency responses of intrinsic Josephson junctions up to 2.5THz, including the observation of Shapiro steps under various conditions, are reported and discussed in this Letter. The sample was an array of intrinsic Josephson junctions singled out from inside a high T C superconducting Bi 2 Sr 2 CaCu 2 O 8+x single crystal, with a bow-tie antenna integrated to it. The number of junctions in the array was controllable, the junctions were homogeneous, the distribution of applied irradiation among the junctions was even, and the junctions could synchronously respond to high frequency irradiation

  14. Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

    International Nuclear Information System (INIS)

    Li, Zheng; Kraner, H.W.; Verbitskaya, E.; Eremin, V.; Ivanov, A.; Rubinelli, F.A.; Fonash, S.J.

    1992-02-01

    Distributions of the A-center (oxygen-vacancy) in neutron silicon detectors have been studied using Deep Level Transient Spectroscopy. A-centers have been found to be nearly uniformly distributed in the silicon water depth for medium resistivity (0.1 - 0.2 kΩ-cm) silicon detectors. A positive filling pulse was needed to detect the A-centers in high resistivity (>4 kΩ-cm) silicon detectors, and this effect was found to be dependent on the oxidation temperature. A discussion of this effect is presented. 16 refs

  15. Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-12

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  16. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  17. Magnetometry with Low-Resistance Proximity Josephson Junction

    Science.gov (United States)

    Jabdaraghi, R. N.; Peltonen, J. T.; Golubev, D. S.; Pekola, J. P.

    2018-06-01

    We characterize a niobium-based superconducting quantum interference proximity transistor (Nb-SQUIPT) and its key constituent formed by a Nb-Cu-Nb SNS weak link. The Nb-SQUIPT and SNS devices are fabricated simultaneously in two separate lithography and deposition steps, relying on Ar ion cleaning of the Nb contact surfaces. The quality of the Nb-Cu interface is characterized by measuring the temperature-dependent equilibrium critical supercurrent of the SNS junction. In the Nb-SQUIPT device, we observe a maximum flux-to-current transfer function value of about 55 nA/Φ_0 in the sub-gap regime of bias voltages. This results in suppression of power dissipation down to a few fW. Low-bias operation of the device with a relatively low probe junction resistance decreases the dissipation by up to two orders of magnitude compared to a conventional device based on an Al-Cu-Al SNS junction and an Al tunnel probe (Al-SQUIPT).

  18. Multi-polar resistance switching and memory effect in copper phthalocyanine junctions

    International Nuclear Information System (INIS)

    Qiao Shi-Zhu; Kang Shi-Shou; Li Qiang; Zhong Hai; Kang Yun; Yu Shu-Yun; Han Guang-Bing; Yan Shi-Shen; Mei Liang-Mo; Qin Yu-Feng

    2014-01-01

    Copper phthalocyanine junctions, fabricated by magnetron sputtering and evaporating methods, show multi-polar (unipolar and bipolar) resistance switching and the memory effect. The multi-polar resistance switching has not been observed simultaneously in one organic material before. With both electrodes being cobalt, the unipolar resistance switching is universal. The high resistance state is switched to the low resistance state when the bias reaches the set voltage. Generally, the set voltage increases with the thickness of copper phthalocyanine and decreases with increasing dwell time of bias. Moreover, the low resistance state could be switched to the high resistance state by absorbing the phonon energy. The stability of the low resistance state could be tuned by different electrodes. In Au/copper phthalocyanine/Co system, the low resistance state is far more stable, and the bipolar resistance switching is found. Temperature dependence of electrical transport measurements demonstrates that there are no obvious differences in the electrical transport mechanism before and after the resistance switching. They fit quite well with Mott variable range hopping theory. The effect of Al 2 O 3 on the resistance switching is excluded by control experiments. The holes trapping and detrapping in copper phthalocyanine layer are responsible for the resistance switching, and the interfacial effect between electrodes and copper phthalocyanine layer affects the memory effect. (interdisciplinary physics and related areas of science and technology)

  19. High Tc Josephson Junctions, SQUIDs and magnetometers

    International Nuclear Information System (INIS)

    Clarke, J.

    1991-01-01

    There has recently been considerable progress in the state-of-the-art of high-T c magnetometers based on dc SQUIDs (Superconducting Quantum Interference Devices). This progress is due partly to the development of more manufacturable Josephson junctions, making SQUIDs easier to fabricate, and partly to the development of multiturn flux transformers that convert the high sensitivity of SQUIDs to magnetic flux to a correspondingly high sensitivity to magnetic field. Needless to say, today's high-T c SQUIDs are still considerably less sensitive than their low-T c counterparts, particularly at low frequencies (f) where their level of 1/f noise remains high. Nonetheless, the performance of the high-T c devices has now reached the point where they are adequate for a number of the less demanding applications; furthermore, as we shall see, at least modest improvements in performance are expected in the near future. In this article, the author outlines these various developments. This is far from a comprehensive review of the field, however, and, apart from Sec. 2, he describes largely his own work. He begins in Sec. 2 with an overview of the various types of Josephson junctions that have been investigated, and in Sec. 3, he describes some of the SQUIDs that have been tested, and assess their performance. Section 4 discuss the development of the multilayer structures essential for an interconnect technology, and, in particular, for crossovers and vias. Section 5 shows how this technology enables one to fabricate multiturn flux transformers which, in turn, can be coupled to SQUIDs to make magnetometers. The performance and possible future improvements in these magnetometers are assessed, and some applications mentioned

  20. Resistive switching properties and low resistance state relaxation in Al/Pr0.7Ca0.3MnO3/Pt junctions

    International Nuclear Information System (INIS)

    Li Songlin; Liao, Z L; Li, J; Gang, J L; Zheng, D N

    2009-01-01

    Metal/insulator/metal structures composed of active Al top electrodes (TEs) and oxygen-deficient Pr 0.7 Ca 0.3 MnO 3 (PCMO) insulator layers are prepared on platinized silicon substrates. The junction resistance exhibits an obvious negative differential resistance region in the first bias sweep and an irreversible increase from 2 to 100 MΩ in repeated ±4 V sweeps. The pulse duration needed to fully switch the junctions is found to be on the order of milliseconds. When 100-500 μs negative pulses are used, the junctions show an incomplete switch to the low resistance state (LRS) which exhibits fluctuating resistances. The fluctuation in the LRS is suppressed and the high-to-low resistance ratio increases gradually when the negative pulse duration is increased from 100 to 500 μs. For relaxed junctions, pulse switching experiments reveal that the LRS undergoes a dynamically stable process at the beginning and then reaches a lower and metastable resistance value. Resistance retention tests also indicate that the high resistance state is very stable, while the metastable LRS gradually relaxes to higher resistance values. The experimental results are discussed with the formation and dissociation of an interfacial AlO x layer at the interface between Al TEs and PCMO layers.

  1. Josephson junctions in high-T/sub c/ superconductors

    Science.gov (United States)

    Falco, C.M.; Lee, T.W.

    1981-01-14

    The invention includes a high T/sub c/ Josephson sperconducting junction as well as the method and apparatus which provides the junction by application of a closely controlled and monitored electrical discharge to a microbridge region connecting two portions of a superconducting film.

  2. Response of high Tc superconducting Josephson junction to nuclear radiation

    International Nuclear Information System (INIS)

    Ding Honglin; Zhang Wanchang; Zhang Xiufeng

    1992-10-01

    The development of nuclear radiation detectors and research on high T c superconducting nuclear radiation detectors are introduced. The emphases are the principle of using thin-film and thick-film Josephson junctions (bridge junction) based on high T c YBCO superconductors to detect nuclear radiation, the fabrication of thin film and thick-film Josephson junction, and response of junction to low energy gamma-rays of 59.5 keV emitted from 241 Am and beta-rays of 546 keV. The results show that a detector for measuring nuclear radiation spectrum made of high T c superconducting thin-film or thick-film, especially, thick-film Josephson junction, certainly can be developed

  3. High-quality planar high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Bergeal, N.; Grison, X.; Lesueur, J.; Faini, G.; Aprili, M.; Contour, J.P.

    2005-01-01

    Reproducible high-T c Josephson junctions have been made in a rather simple two-step process using ion irradiation. A microbridge (1 to 5 μm wide) is firstly designed by ion irradiating a c-axis-oriented YBa 2 Cu 3 O 7-δ film through a gold mask such as the nonprotected part becomes insulating. A lower T c part is then defined within the bridge by irradiating with a much lower fluence through a narrow slit (20 nm) opened in a standard electronic photoresist. These planar junctions, whose settings can be finely tuned, exhibit reproducible and nearly ideal Josephson characteristics. This process can be used to produce complex Josephson circuits

  4. Electrical resistivity of monolayers and bilayers of alkanethiols in tunnel junction with gate electrode

    International Nuclear Information System (INIS)

    York, Roger L.; Nacionales, David; Slowinski, Krzysztof

    2005-01-01

    The tunneling resistances of monolayers and bilayers of n-alkanethiols in macroscopic Hg-Hg junctions with an electrochemical gate are reported. The resistances near zero bias calculated per 1 hydrocarbon chain vary from (5 ± 4) x 10 12 Ω for n-nonanethiol to (4 ± 2) x 10 16 Ω for n-octadecanethiol. These values indicate that monolayers of hydrocarbons in Hg-Hg junctions are substantially more resistive as compared to measurements employing microscopic tunnel junctions. The tunneling resistances of monolayer junctions are approximately 1 order of magnitude larger than those of bilayer junctions containing the same number of atoms indicating inefficient electronic coupling across the non-bonded -CH 3 |Hg interface. The symmetric current-voltage curves observed for the asymmetric junctions of Hg-S-(CH 2 ) n -CH 3 |Hg type suggest that these junctions do not behave as molecular diodes. Additional experimental evidence for the nature of the -CH 3 |Hg interface in the Hg-S-(CH 2 ) n -CH 3 |Hg junction is also presented

  5. A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

    Science.gov (United States)

    Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

    2015-07-16

    The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

  6. Technology Enabling Ultra High Concentration Multi-Junction Cells. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Bedair, S. M.; Colter, Peter

    2016-03-30

    The project goal is to enable multijunction cells to operate at greater than 2000× suns intensity with efficiency above forty percent. To achieve this goal the recipients have developed a robust high-bandgap tunnel junction, reduce series resistance, and integrated a practical heat dissipation scheme.

  7. Using ion irradiation to make high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Bergeal, N.; Lesueur, J.; Sirena, M.; Faini, G.; Aprili, M.; Contour, J. P.; Leridon, B.

    2007-01-01

    In this article we describe the effect of ion irradiation on high-T c superconductor thin film and its interest for the fabrication of Josephson junctions. In particular, we show that these alternative techniques allow to go beyond most of the limitations encountered in standard junction fabrication methods, both in the case of fundamental and technological purposes. Two different geometries are presented: a planar one using a single high-T c film and a mesa one defined in a trilayer structure

  8. A novel multiple super junction power device structure with low specific on-resistance

    International Nuclear Information System (INIS)

    Zhu Hui; Li Haiou; Li Qi; Huang Yuanhao; Xu Xiaoning; Zhao Hailiang

    2014-01-01

    A novel multiple super junction (MSJ) LDMOS power device is proposed to decrease R on due to lateral and vertical interactions between the N-pillar and P-pillar. In the studied device: multiple layers of SJ are introduced oppositely under surface SJ; when compared with 2D-depleting of the conventional super junction (CSJ), a 3D-depleted effect is formed in the MSJ thanks to vertical electric field modulation; and, current distribution is improved by deep drain, which increases the drift doping concentration and results in a lower on-resistance. The high electric field around the drain region by substrate-assisted depleted effect is reduced due to the charge balance result from the electric field shielding effect of the bottom SJ, which causes the uniform electric field in the drift region and the high breakdown voltage. The numerical simulation results indicate that the specific on-resistance of the MSJ device is reduced by 42% compared with that of CSJ device, while maintaining a high breakdown voltage; the cell pitch of the device is 12 μm. (semiconductor devices)

  9. Phase Locking and Chaos in a Josephson Junction Array Shunted by a Common Resistance

    International Nuclear Information System (INIS)

    Tie-Ge, Zhou; Jing, Mao; Ting-Shu, Liu; Yue, Lai; Shao-Lin, Yan

    2009-01-01

    The dynamics of a Josephson junction array shunted by a common resistance are investigated by using numerical methods. Coexistence of phase locking and chaos is observed in the system when the resistively and capacitively shunted junction model is adopted. The corresponding parameter ranges for phase locking and chaos are presented. When there are three resistively shunted junctions in the array, chaos is found for the first time and the parameter range for chaos is also presented. According to the theory of Chernikov and Schmidt, when there are four or more junctions in the array, the system exhibits chaotic behavior. Our results indicate that the theory of Chernikov and Schmidt is not exactly appropriate. (condensed matter: electronicstructure, electrical, magnetic, and opticalproperties)

  10. What happens in Josephson junctions at high critical current densities

    Science.gov (United States)

    Massarotti, D.; Stornaiuolo, D.; Lucignano, P.; Caruso, R.; Galletti, L.; Montemurro, D.; Jouault, B.; Campagnano, G.; Arani, H. F.; Longobardi, L.; Parlato, L.; Pepe, G. P.; Rotoli, G.; Tagliacozzo, A.; Lombardi, F.; Tafuri, F.

    2017-07-01

    The impressive advances in material science and nanotechnology are more and more promoting the use of exotic barriers and/or superconductors, thus paving the way to new families of Josephson junctions. Semiconducting, ferromagnetic, topological insulator and graphene barriers are leading to unconventional and anomalous aspects of the Josephson coupling, which might be useful to respond to some issues on key problems of solid state physics. However, the complexity of the layout and of the competing physical processes occurring in the junctions is posing novel questions on the interpretation of their phenomenology. We classify some significant behaviors of hybrid and unconventional junctions in terms of their first imprinting, i.e., current-voltage curves, and propose a phenomenological approach to describe some features of junctions characterized by relatively high critical current densities Jc. Accurate arguments on the distribution of switching currents will provide quantitative criteria to understand physical processes occurring in high-Jc junctions. These notions are universal and apply to all kinds of junctions.

  11. An ion-beam-assisted process for high-Tc Josephson junctions

    International Nuclear Information System (INIS)

    Huang, M.Q.; Chen, L.; Zhao, Z.X.; Yang, T.; Nie, J.C.; Wu, P.J.; Xiong, X.M.

    1997-01-01

    We have developed a non-ion-etching ion-beam-assisted-deposition (IBAD) process for fabricating high critical-temperature (T c ) grain boundary Josephson junctions through a photoresist liftoff mask. The YBa 2 Cu 3 O 7 (YBCO) junctions fabricated through this process exhibited the resistively-shunted-junction (RSJ)-like I - V characteristics. The well-defined Shapiro steps have been seen on the I - V curves under microwave radiation. The magnetic modulation of critical current of a 4 μm width YBCO junction tallied with the prior simulated Fraunhofer diffraction pattern of a Josephson junction with a spatially homogeneous critical current density. The maximum peak-to-peak modulation voltage across the dc superconducting quantum interference device (SQUID) fabricated by using these junctions reached up to 32 μV at 77 K. The magnetic modulation of the SQUID exhibited periodic behavior with the observed modulation period of 5.0x10 -4 G. copyright 1997 American Institute of Physics

  12. Improving ion irradiated high Tc Josephson junctions by annealing: The role of vacancy-interstitial annihilation

    International Nuclear Information System (INIS)

    Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

    2007-01-01

    The authors have studied the annealing effect in the transport properties of high T c Josephson junctions (JJs) made by ion irradiation. Low temperature annealing (80 deg. C) increases the JJ coupling temperature (T J ) and the I c R n product, where I c is the critical current and R n the normal resistance. They have found that the spread in JJ characteristics can be reduced by sufficient long annealing times, increasing the reproducibility of ion irradiated Josephson junctions. The characteristic annealing time and the evolution of the spread in the JJ characteristics can be explained by a vacancy-interstitial annihilation process rather than by an oxygen diffusion one

  13. The critical current density of an SNS Josephson-junction in high magnetic fields

    International Nuclear Information System (INIS)

    Carty, George J; Hampshire, Damian P

    2013-01-01

    Although the functional form of the critical current density (J c ) of superconducting–normal–superconducting (SNS) Josephson-junctions (J-Js) has long been known in the very low field limit (e.g. the sinc function), includes the local properties of the junction and has been confirmed experimentally in many systems, there have been no such general solutions available for high fields. Here, we derive general analytic equations for J c in zero field and in high fields across SNS J-Js for arbitrary resistivity of the superconductor and the normal layer which are consistent with the literature results available in limiting cases. We confirm the validity of the approach using both computational solutions to time-dependent Ginzburg–Landau (TDGL) theory applied to SNS junctions and experimental J c data for an SNS PbBi–Cd–PbBi junction. We suggest that since SNS junctions can be considered the basic building blocks for the description of the grain boundaries of polycrystalline materials because they both provide flux-flow channels, this work may provide a mathematical framework for high J c technological polycrystalline superconductors in high magnetic fields. (paper)

  14. Negative Differential Resistance due to Nonlinearities in Single and Stacked Josephson Junctions

    DEFF Research Database (Denmark)

    Filatrella, Giovanni; Pierro, Vincenzo; Pedersen, Niels Falsig

    2014-01-01

    Josephson junction systems with a negative differential resistance (NDR) play an essential role for applications. As a well-known example, long Josephson junctions of the BSCCO type have been considered as a source of terahertz radiation in recent experiments. Numerical results for the dynamics...... shapes of NDR region are considered, and we found that it is essential to distinguish between current bias and voltage bias....

  15. Highly doped layer for tunnel junctions in solar cells

    Science.gov (United States)

    Fetzer, Christopher M.

    2017-08-01

    A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

  16. Flux flow in high-Tc Josephson junctions

    DEFF Research Database (Denmark)

    Filatrella, G.; Pedersen, Niels Falsig

    1993-01-01

    The possibility of achieving fluxon nucleation in nonhysteretic high-T(c) Josephson junctions due to the presence of inhomogeneities is investigated numerically. For a large range of parameters the I- V characteristics in presence of such discontinuities show a strong similarity with those obtain...

  17. Physical model of the contact resistivity of metal-graphene junctions

    International Nuclear Information System (INIS)

    Chaves, Ferney A.; Jiménez, David; Cummings, Aron W.; Roche, Stephan

    2014-01-01

    While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems

  18. Physical model of the contact resistivity of metal-graphene junctions

    Energy Technology Data Exchange (ETDEWEB)

    Chaves, Ferney A., E-mail: ferneyalveiro.chaves@uab.cat; Jiménez, David [Departament d' Enginyeria Electrònica, Escola d' Enginyeria, Universitat Autònoma de Barcelona, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Cummings, Aron W. [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); Roche, Stephan [ICN2–Institut Català de Nanociència i Nanotecnologia, Campus UAB, 08193 Bellaterra, Barcelona (Spain); ICREA, Institució Catalana de Recerca i Estudis Avançats, 08070 Barcelona (Spain)

    2014-04-28

    While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. One of the most important factors in determining the resistance of a metal-graphene junction is the contact resistivity. Despite the large number of experimental works that exist in the literature measuring the contact resistivity, a simple model of it is still lacking. In this paper, we present a comprehensive physical model for the contact resistivity of these junctions, based on the Bardeen Transfer Hamiltonian method. This model unveils the role played by different electrical and physical parameters in determining the specific contact resistivity, such as the chemical potential of interaction, the work metal-graphene function difference, and the insulator thickness between the metal and graphene. In addition, our model reveals that the contact resistivity is strongly dependent on the bias voltage across the metal-graphene junction. This model is applicable to a wide variety of graphene-based electronic devices and thus is useful for understanding how to optimize the contact resistance in these systems.

  19. High-performance DC SQUIDs with submicrometer niobium Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    de Waal, V.J.; Klapwijk, T.M.; van den Hamer, P.

    1983-11-01

    We report on the fabrication and performance of low-noise, all-niobium, thin-film planar dc SQUIDs with submicrometer Josephson junctions. The junctions are evaporated obliquely through a metal shadow evaporation mask, which is made using optical lithography with 0.5 ..mu..m tolerance. The Josephson junction barrier is formed by evaporating a thin silicon film and with a subsequent oxidation in a glow discharge. The junction parameters can be reproduced within a factor of two. Typical critical currents of the SQUIDs are about 3 ..mu..A and the resistances are about 100 ..cap omega... With SQUIDs having an inductance of 1 nH the voltage modulation is a least 60 ..mu..V. An intrinsic energy resolution of 4 x 10/sup -32/ J/Hz has been reached. The SQUIDs are coupled to wire-wound input coils or with thin-film input coils. The thin-film input coil consists of a niobium spiral of 20 turns on a separate substrate. In both cases the coil is glued onto a 2-nH SQUID with a coupling efficiency of at least 0.5. Referred to the thin-film input coil, the best coupled energy resolution achieved is 1.2 x 10/sup -30/ J/Hz measured in a flux-locked loop at frequencies above 10 Hz. As far as we know, this is the best figure achieved with an all-refractory-metal thin-film SQUID. The fabrication technique used is suited for making circuits with SQUID and pickup coil on the same substrate. We describe a compact, planar, first-order gradiometer integrated with a SQUID on a single substrate. The gradient noise of this device is 3 x 10/sup -12/ Tm/sup -1/. The gradiometer has a size of 12 mm x 17 mm, is simple to fabricate, an is suitable for biomedical applications.

  20. High-performance dc SQUIDs with submicrometer niobium Josephson junctions

    Science.gov (United States)

    de Waal, V. J.; Klapwijk, T. M.; van den Hamer, P.

    1983-11-01

    We report on the fabrication and performance of low-noise, all-niobium, thin-film planar dc SQUIDs with submicrometer Josephson junctions. The junctions are evaporated obliquely through a metal shadow evaporation mask, which is made using optical lithography with 0.5 µm tolerance. The Josephson junction barrier is formed by evaporating a thin silicon film and with a subsequent oxidation in a glow discharge. The junction parameters can be reproduced within a factor of two. Typical critical currents of the SQUIDs are about 3 µA and the resistances are about 100 Ω. With SQUIDs having an inductance of 1 nH the voltage modulation is at least 60 µV. An intrinsic energy resolution of 4×10-32 J/Hz has been reached. The SQUIDs are coupled to wire-wound input coils or with thin-film input coils. The thin-film input coil consists of a niobium spiral of 20 turns on a separate substrate. In both cases the coil is glued onto a 2-nH SQUID with a coupling efficiency of at least 0.5. Referred to the thin-film input coil, the best coupled energy resolution achieved is 1.2×10-30 J/Hz measured in a flux-locked loop at frequencies above 10 Hz. As far as we know, this is the best figure achieved with an all-refractory-metal thin-film SQUID. The fabrication technique used is suited for making circuits with SQUID and pickup coil on the same substrate. We describe a compact, planar, first-order gradiometer integrated with a SQUID on a single substrate. The gradient noise of this device is 3×10-12 T m-1. The gradiometer has a size of 12 mm×17 mm, is simple to fabricate, and is suitable for biomedical applications.

  1. Negative differential resistance observation in complex convoluted fullerene junctions

    Science.gov (United States)

    Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

    2018-04-01

    In this work, we simulated the smallest fullerene molecule, C20 in a two-probe device model with gold electrodes. The gold electrodes comprised of (011) miller planes were carved to construct the novel geometry based four unique shapes, which were strung to fullerene molecules through mechanically controlled break junction techniques. The organized devices were later scrutinized using non-equilibrium Green's function based on the density functional theory to calculate their molecular orbitals, energy levels, charge transfers, and electrical parameters. After intense scrutiny, we concluded that five-edged and six-edged devices have the lowest and highest current-conductance values, which result from their electrode-dominating and electrode-subsidiary effects, respectively. However, an interesting observation was that the three-edged and four-edged electrodes functioned as semi-metallic in nature, allowing the C20 molecule to demonstrate its performance with the complementary effect of these electrodes in the electron conduction process of a two-probe device.

  2. Voltage control of a magnetic switching field for magnetic tunnel junctions with low resistance and perpendicular magnetic anisotropy

    Science.gov (United States)

    Tezuka, N.; Oikawa, S.; Matsuura, M.; Sugimoto, S.; Nishimura, K.; Irisawa, T.; Nagamine, Y.; Tsunekawa, K.

    2018-05-01

    The authors investigated the voltage control of a magnetic anisotropy field for perpendicular-magnetic tunnel junctions (p-MTJs) with low and high resistance-area (RA) products and for synthetic antiferromagnetic free and pinned layers. It was found that the sample with low RA products was more sensitive to the applied bias voltage than the sample with high RA products. The bias voltage effect was less pronounced for our sample with the synthetic antiferromagnetic layer for high RA products compared to the MTJs with single free and pinned layers.

  3. Effects of junction resistance and counterelectrode material on point-contact tunneling into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/

    Energy Technology Data Exchange (ETDEWEB)

    Moog, E.R.; Hawley, M.E.; Gray, K.E.; Liu, J.Z.; Hinks, D.G.; Capone, D.W. II; Downey, J.

    1988-06-01

    The effects of junction resistance and counterelectrode material on the results of point-contact tunneling studies into single- and polycrystalline YBa/sub 2/Cu/sub 3/O/sub 7-y/ are illustrated. Although reasonably symmetric I(V) curves predominantly indicate energy gap values /Delta/ /approx/ 20 meV, large asymmetries are often found for high-resistance junctions. Very low-resistance junctions show the expected behavior of pure metallic bridge and indicate /Delta/ /approx/ 25-30 meV.

  4. Ultra-shallow junction (USJ) sheet resistance measurements with a non-penetrating four point probe

    International Nuclear Information System (INIS)

    Benjamin, M.C.; Hillard, R.J.; Borland, J.O.

    2005-01-01

    An accurate method to measure the four point probe (4PP) sheet resistance (R S ) of ultra shallow junction (USJ) Source-Drain Extension structures is described. The method utilizes Elastic Material probes (EM-probes) to form non-penetrating contacts to the silicon surface [R.J. Hillard, P.Y. Hung, William Chism, C. Win Ye, W.H. Howland, L.C. Tan, C.E. Kalnas, Characterization and Metrology for ULSI Technology, AIP Conference proceedings 683 (2003) 802.]. The probe design is kinematic and the force is controlled to ensure elastic deformation of the probe material. The probe material is such that large direct tunneling currents can flow through the native oxide thereby forming a low impedance contact. Sheet resistance measurements on USJ implanted P+/N structures with Secondary Ion Mass Spectroscopy (SIMS) junction depths less than 15 nm have been measured. The method is demonstrated on implanted USJ structures and found to be consistent with expectations

  5. Large time-dependent coercivity and resistivity modification under sustained voltage application in a Pt/Co/AlOx/Pt junction.

    NARCIS (Netherlands)

    Brink, van den A.; van der Heijden, M.A.J.; Swagten, H.J.M.; Koopmans, B.

    2015-01-01

    The coercivity and resistivity of a Pt/Co/AlOx/Pt junction are measured under sustained voltage application. High bias voltages of either polarity are determined to cause a strongly enhanced, reversible coercivity modification compared to low voltages. Time-resolved measurements show a logarithmic

  6. High Radiation Resistance IMM Solar Cell

    Science.gov (United States)

    Pan, Noren

    2015-01-01

    Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

  7. Online junction temperature measurement via internal gate resistance during turn-on

    DEFF Research Database (Denmark)

    Baker, Nick; Munk-Nielsen, Stig; Liserre, Marco

    2014-01-01

    A new method for junction temperature measurement of power semiconductor switches is presented. The measurement exploits the temperature dependent resistance of the temperature sensitive electrical parameter (TSEP): the internal gate resistance. This dependence can be observed during the normal...... switching transitions of an IGBT or MOSFET, and as a result the presented method uses the integral of the gate voltage during the turn-on delay. A measurement circuit can be integrated into a gate driver with no modification to converter or gate driver operation and holds significant advantages over other...

  8. Performance analysis of high-concentrated multi-junction solar cells in hot climate

    Science.gov (United States)

    Ghoneim, Adel A.; Kandil, Kandil M.; Alzanki, Talal H.; Alenezi, Mohammad R.

    2018-03-01

    Multi-junction concentrator solar cells are a promising technology as they can fulfill the increasing energy demand with renewable sources. Focusing sunlight upon the aperture of multi-junction photovoltaic (PV) cells can generate much greater power densities than conventional PV cells. So, concentrated PV multi-junction solar cells offer a promising way towards achieving minimum cost per kilowatt-hour. However, these cells have many aspects that must be fixed to be feasible for large-scale energy generation. In this work, a model is developed to analyze the impact of various atmospheric factors on concentrator PV performance. A single-diode equivalent circuit model is developed to examine multi-junction cells performance in hot weather conditions, considering the impacts of both temperature and concentration ratio. The impacts of spectral variations of irradiance on annual performance of various high-concentrated photovoltaic (HCPV) panels are examined, adapting spectra simulations using the SMARTS model. Also, the diode shunt resistance neglected in the existing models is considered in the present model. The present results are efficiently validated against measurements from published data to within 2% accuracy. Present predictions show that the single-diode model considering the shunt resistance gives accurate and reliable results. Also, aerosol optical depth (AOD) and air mass are most important atmospheric parameters having a significant impact on HCPV cell performance. In addition, the electrical efficiency (η) is noticed to increase with concentration to a certain concentration degree after which it decreases. Finally, based on the model predictions, let us conclude that the present model could be adapted properly to examine HCPV cells' performance over a broad range of operating conditions.

  9. Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance

    KAUST Repository

    Selzer, Franz; Floresca, Carlo; Kneppe, David; Bormann, Ludwig; Sachse, Christoph; Weiß , Nelli; Eychmü ller, Alexander; Amassian, Aram; Mü ller-Meskamp, Lars; Leo, Karl

    2016-01-01

    We measure basic network parameters of silvernanowire (AgNW) networks commonly used as transparent conductingelectrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistanceRNW of a single nanowire shows a value of RNW=(4.96±0.18) Ω/μm. The junction resistanceRJ differs for annealed and non-annealed NW networks, exhibiting values of RJ=(25.2±1.9) Ω (annealed) and RJ=(529±239) Ω (non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistanceRS of the entire network. Extrapolating RJ to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible RS reduction by only ≈20% (common RS≈10 Ω/sq). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries.

  10. Electrical limit of silver nanowire electrodes: Direct measurement of the nanowire junction resistance

    KAUST Repository

    Selzer, Franz

    2016-04-19

    We measure basic network parameters of silvernanowire (AgNW) networks commonly used as transparent conductingelectrodes in organic optoelectronic devices. By means of four point probing with nanoprobes, the wire-to-wire junction resistance and the resistance of single nanowires are measured. The resistanceRNW of a single nanowire shows a value of RNW=(4.96±0.18) Ω/μm. The junction resistanceRJ differs for annealed and non-annealed NW networks, exhibiting values of RJ=(25.2±1.9) Ω (annealed) and RJ=(529±239) Ω (non-annealed), respectively. Our simulation achieves a good agreement between the measured network parameters and the sheet resistanceRS of the entire network. Extrapolating RJ to zero, our study show that we are close to the electrical limit of the conductivity of our AgNW system: We obtain a possible RS reduction by only ≈20% (common RS≈10 Ω/sq). Therefore, we expect further performance improvements in AgNW systems mainly by increasing NW length or by utilizing novel network geometries.

  11. From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth

    International Nuclear Information System (INIS)

    Chaudhari, V.A.; Solanki, C.S.

    2009-01-01

    Use of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2 to 10 suns. Step by step optimization of commercial cell in terms of grid geometry, junction depth, and electroplating of the front metal contacts is proposed. A model of resistance network of solar cell is developed and used for the optimization. Efficiency of un optimized commercial cell at 10 suns drops by 30% of its 1 sun value corresponding to resistive power loss of about 42%. The optimized cell with grid optimization, junction optimization, electroplating, and junction optimized with electroplated contacts cell gives resistive power loss of 20%, 16%, 11%, and 8%, respectively. An efficiency gain of 3% at 10 suns for fully optimized cell is estimated

  12. Magnetization switching driven by spin-transfer-torque in high-TMR magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Aurelio, D.; Torres, L.; Finocchio, G.

    2009-01-01

    This paper presents a numerical study of magnetization switching driven by spin-polarized current in high-TMR magnetic tunnel junctions (TMR>100%). The current density distribution throughout the free-layer is computed dynamically, by modeling the ferromagnet/insulator/ferromagnet trilayer as a series of parallel resistances. The validity of the main hypothesis, which states that the current flows perpendicular to the sample plane, has been verified by numerically solving the Poisson equation. Our results show that the nonuniform current density distribution is a source of asymmetry to the switching process. Furthermore, we observe that the reversal mechanisms are characterized by well-defined localized pre-switching oscillation modes.

  13. Low-resistance magnetic tunnel junctions prepared by partial remote plasma oxidation of 0.9 nm Al barriers

    International Nuclear Information System (INIS)

    Ferreira, Ricardo; Freitas, Paulo P.; MacKenzie, Maureen; Chapman, John N.

    2005-01-01

    Current perpendicular to the plane read-head elements suitable for high-density magnetic storage require low resistance while maintaining a reasonable magnetoresistive (MR) signal (RxA 2 and MR>20% for areal densities >200 Gb/in 2 ). This letter shows that competitive low RxA junctions can be produced using underoxidized barriers starting from 0.9 nm thick Al layers. For as-deposited junctions, tunneling magnetoresistance (TMR) ∼20% for RxA∼2-15 Ω μm 2 is obtained, while in the RxA∼60-150 Ω μm 2 range, TMR values between 40% to 45% are achieved. A limited number of junctions exhibits considerably lower RxA values with respect to the average, while keeping a similar MR (down to 0.44 Ω μm 2 with TMR of 20% and down to 2.2 Ω μm 2 with TMR of 52%). Experimental data suggest that current confinement to small regions (barrier defects/hot spots) may explain these results

  14. Negative differential resistance behavior in phosphorus-doped armchair graphene nanoribbon junctions

    International Nuclear Information System (INIS)

    Zhou, Yuhong; Zhang, Daoli; Zhang, Jianbing; Miao, Xiangshui; Ye, Cong

    2014-01-01

    In this present work, we investigate the electronic transport properties of phosphorus-doped armchair graphene nanoribbon (AGNR) junctions by employing nonequilibrium Green's functions in combination with the density-function theory. Two phosphorus (P) atoms are considered to substitute the central carbon atom with the different width of AGNRs. The results indicate that the electronic transport behaviors are strongly dependent on the width of the P-doped graphene nanoribbons. The current-voltage characteristics of the doped AGNR junctions reveal an interesting negative differential resistance (NDR) and exhibit three distinct family (3 n, 3 n + 1, 3 n + 2) behaviors. These results display that P doping is a very good way to achieve NDR of the graphene nanoribbon devices

  15. Resistive switching of Cu/Cu2O junction fabricated using simple thermal oxidation at 423 K for memristor application

    Science.gov (United States)

    Ani, M. H.; Helmi, F.; Herman, S. H.; Noh, S.

    2018-01-01

    Recently, extensive researches have been done on memristor to replace current memory storage technologies. Study on active layer of memristor mostly involving n-type semiconductor oxide such as TiO2 and ZnO. This paper highlight a simple water vapour oxidation method at 423 K to form Cu/Cu2O electronic junction as a new type of memristor. Cu2O is a p-type semiconductor oxide, was used as the active layer of memristor. Cu/Cu2O/Au memristor was fabricated by thermal oxidation of copper foil, followed by sputtering of gold. Structural, morphological and memristive properties were characterized using XRD, FESEM, and current-voltage, I-V measurement respectively. Its memristivity was indentified by pinch hysteresis loop and measurement of high resistance state (HRS) and low resistance state (LRS) of the sample. The Cu/Cu2O/Au memristor demonstrates comparable performances to previous studies using other methods.

  16. Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

    International Nuclear Information System (INIS)

    Noguchi, Yutaka; Ueda, Rieko; Kubota, Tohru; Kamikado, Toshiya; Yokoyama, Shiyoshi; Nagase, Takashi

    2008-01-01

    We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H 2 BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes

  17. High-speed carrier-depletion silicon Mach-Zehnder optical modulators with lateral PN junctions

    Directory of Open Access Journals (Sweden)

    Graham Trevor Reed

    2014-12-01

    Full Text Available This paper presents new experimental data from a lateral PN junction silicon Mach-Zehnder optical modulator. Efficiencies in the 1.4V.cm to 1.9V.cm range are demonstrated for drive voltages between 0V and 6V. High speed operation up to 52Gbit/s is also presented. The performance of the device which has its PN junction positioned in the centre of the waveguide is then compared to previously reported data from a lateral PN junction device with the junction self-aligned to the edge of the waveguide rib. An improvement in modulation efficiency is demonstrated when the junction is positioned in the centre of the waveguide. Finally we propose schemes for achieving high modulation efficiency whilst retaining self-aligned formation of the PN junction.

  18. Junction structures based on the high-Tc superconductor YBa2Cu3O7-δ

    International Nuclear Information System (INIS)

    Gijs, M.A.M.

    1993-01-01

    An overview is given of the investigations of the Josephson effect in junction structures based on the high-T c superconductor YBa 2 Cu 3 O 7-δ , which were carried out at the Philips Research Laboratories in Eindhoven in the 1988-1990 period. The reported results are presented in their international scientific context, without attempting a complete review of the subject. However, the various junction types studied give a good idea of the scientific pursuits of high-T c junction researchers in this period. The following junctions are considered: in the category of 'weak link'-type junctions we have investigated YBa 2 Cu 3 O 7-δ -Ag-Nb point contact junctions, YBa 2 Cu 3 O 7-δ Dayem bridges and YBa 2 Cu 3 O 7-δ -Ag(-Al)-Pb proximity junctions. In these structures we combine a high-T c with a low-T c superconductor. We also fabricated planar 'all high-T c ' YBa 2 Cu 3 O 7-δ -Ag-YBa 2 Cu 3 O 7-δ junctions using a submicron structuring process. Next we have made tunnel junctions to study density of states effects of the high-T c superconductor : YBa 2 Cu 3 O 7-δ -Pb junctions using the degraded YBa 2 Cu 3 O 7-δ -Pb interface as a tunnel barrier, and YBa 2 Cu 3 O 7-δ -Ag-Al/Al 2 O 3 /Pb tunnel junctions based on the superconducting proximity effect. Our junction structures are electrically characterized and mostly studied in microwave and magnetic fields. Results are compared with current theoretical models. (orig.)

  19. Molecular Dynamics Studies on Ballistic Thermal Resistance of Graphene Nano-Junctions

    International Nuclear Information System (INIS)

    Yao Wen-Jun; Cao Bing-Yang

    2015-01-01

    Ballistic thermal resistance of graphene nano-junctions is investigated using non-equilibrium molecular dynamics simulation. The simulation system is consisted of two symmetrical trapezoidal or rectangular graphene nano-ribbons (GNRs) and a connecting nanoscale constriction in between. From the simulated temperature profile, a big temperature jump resulted from the constriction is found, which is proportional to the heat current and corresponds to a local ballistic thermal resistance. Fixing the constriction width and the length of GNRs, this ballistic thermal resistance is independent of the width of the GNRs bottom layer, i.e., the convex angle. But interestingly, this thermal resistance has obvious size effect. It is inversely proportional to the constriction width and will disappear with the constriction being wider. Moreover, based on the phonon dynamics theory, a theoretical model of the ballistic thermal resistance in two-dimensional nano-systems is developed, which gives a good explanation on microcosmic level and agrees well with the simulation result quantitatively and qualitatively. (paper)

  20. Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion radiation

    Science.gov (United States)

    Kobayashi, Daisuke; Hirose, Kazuyuki; Makino, Takahiro; Onoda, Shinobu; Ohshima, Takeshi; Ikeda, Shoji; Sato, Hideo; Inocencio Enobio, Eli Christopher; Endoh, Tetsuo; Ohno, Hideo

    2017-08-01

    The influences of various types of high-energy heavy-ion radiation on 10-nm-scale CoFeB-MgO magnetic tunnel junctions with a perpendicular easy axis have been investigated. In addition to possible latent damage, which has already been pointed out in previous studies, high-energy heavy-ion bombardments demonstrated that the magnetic tunnel junctions may exhibit clear flips between their high- and low-resistance states designed for a digital bit 1 or 0. It was also demonstrated that flipped magnetic tunnel junctions still may provide proper memory functions such as read, write, and hold capabilities. These two findings proved that high-energy heavy ions can produce recoverable bit flips in magnetic tunnel junctions, i.e., soft errors. Data analyses suggested that the resistance flips stem from magnetization reversals of the ferromagnetic layers and that each of them is caused by a single strike of heavy ions. It was concurrently found that an ion strike does not always result in a flip, suggesting a stochastic process behind the flip. Experimental data also showed that the flip phenomenon is dependent on the device and heavy-ion characteristics. Among them, the diameter of the device and the linear energy transfer of the heavy ions were revealed as the key parameters. From their dependences, the physical mechanism behind the flip was discussed. It is likely that a 10-nm-scale ferromagnetic disk loses its magnetization due to a local temperature increase induced by a single strike of heavy ions; this demagnetization is followed by a cooling period associated with a possible stochastic recovery process. On the basis of this hypothesis, a simple analytical model was developed, and it was found that the model accounts for the results reasonably well. This model also predicted that magnetic tunnel junctions provide sufficiently high soft-error reliability for use in space, highlighting their advantage over their counterpart conventional semiconductor memories.

  1. Many-junction photovoltaic device performance under non-uniform high-concentration illumination

    Science.gov (United States)

    Valdivia, Christopher E.; Wilkins, Matthew M.; Chahal, Sanmeet S.; Proulx, Francine; Provost, Philippe-Olivier; Masson, Denis P.; Fafard, Simon; Hinzer, Karin

    2017-09-01

    A parameterized 3D distributed circuit model was developed to calculate the performance of III-V solar cells and photonic power converters (PPC) with a variable number of epitaxial vertically-stacked pn junctions. PPC devices are designed with many pn junctions to realize higher voltages and to operate under non-uniform illumination profiles from a laser or LED. Performance impacts of non-uniform illumination were greatly reduced with increasing number of junctions, with simulations comparing PPC devices with 3 to 20 junctions. Experimental results using Azastra Opto's 12- and 20-junction PPC illuminated by an 845 nm diode laser show high performance even with a small gap between the PPC and optical fiber output, until the local tunnel junction limit is reached.

  2. Development of High Temperature Superconducting Josephson Junction Device Technology

    National Research Council Canada - National Science Library

    Myers, Kirsten

    1998-01-01

    The DuPont program was successful in generating useful knowledge about thallium cuprate materials, photoresist reflow processing, and radiant heater technology though it did not lead to a new junction technology...

  3. High-efficiency thermal switch based on topological Josephson junctions

    Science.gov (United States)

    Sothmann, Björn; Giazotto, Francesco; Hankiewicz, Ewelina M.

    2017-02-01

    We propose theoretically a thermal switch operating by the magnetic-flux controlled diffraction of phase-coherent heat currents in a thermally biased Josephson junction based on a two-dimensional topological insulator. For short junctions, the system shows a sharp switching behavior while for long junctions the switching is smooth. Physically, the switching arises from the Doppler shift of the superconducting condensate due to screening currents induced by a magnetic flux. We suggest a possible experimental realization that exhibits a relative temperature change of 40% between the on and off state for realistic parameters. This is a factor of two larger than in recently realized thermal modulators based on conventional superconducting tunnel junctions.

  4. High-Tc SNS Junctions: A New Generation of Proximity-Coupled Josephson Devices

    Science.gov (United States)

    Kleinsasser, A. W.

    1997-01-01

    This paper reviews this evolution of proximity - coupled Josephson jucntion from the early investigations on low temperature superconductor-normal -superconductor junctions through the introduction of hybrid superconductor-semiconductor devices and the resulting interest in mesoscopic Josephson junctions, to the recent development of high temperature devices.

  5. Nanometer-scale patterning of high-Tc superconductors for Josephson junction-based digital circuits

    International Nuclear Information System (INIS)

    Wendt, J.R.; Plut, T.A.; Corless, R.F.; Martens, J.S.; Berkowitz, S.; Char, K.; Johansson, M.; Hou, S.Y.; Phillips, J.M.

    1994-01-01

    A straightforward method for nanometer-scale patterning of high-T c superconductor thin films is discussed. The technique combines direct-write electron beam lithography with well-controlled aqueous etches and is applied to the fabrication of Josephson junction nanobridges in high-quality, epitaxial thin-film YBa 2 Cu 3 O 7 . We present the results of our studies of the dimensions, yield, uniformity, and mechanism of the junctions along with the performance of a representative digital circuit based on these junctions. Direct current junction parameter statistics measured at 77 K show critical currents of 27.5 μA±13% for a sample set of 220 junctions. The Josephson behavior of the nanobridge is believed to arise from the aggregation of oxygen vacancies in the nanometer-scale bridge

  6. Resistive transition of two-dimensional arrays of proximity-effect Josephson junctions

    International Nuclear Information System (INIS)

    Abraham, D.W.

    1983-01-01

    Results of measurements on large arrays of PbBi/Cu proximity-effect junctions are presented. Extrapolation of the critical current measured at low temperature to the region at and above T/sub c/ allows us to describe the initial drop in resistance by a simple model of the proximity effect, and also to define an effective temperature T' = E/sub J/(T/sub c/)T/E/sub J/(T) for describing the vortex-unbinding transition. This extrapolation has also allowed comparison of the magnitude of the universal jump in the renormalized coupling strength E/sub J/(T) with prediction, after allowance for renormalization effects. A simple decomposition of the vortex population above T/sub c/ into a sum of thermally-generated and currents-split components allows us to compare data taken at finite voltage sensitivity with theory. This idea is used to understand the broadened universal scaling of this data in a form consistent with the theory of Halperin and Nelson, suitably modified for array samples. Except for temperatures very near the transition temperature, these results can differ significantly from the continuum results of Halperin and Nelson and may be more appropriate for description of junction arrays and some granular films. New experimental data are also presented which show a periodic variation of the resistance of these arrays with the magnetic flux per cell in units of the flux quantum, including a secondary minimum at the half-quantum points. A simple model is presented which accounts for the existence, shape, and magnitude of this periodic variation in terms of vortex core energies. Observations of the current dependence of this periodic variation are presented, and a qualitative model of this effect is discussed

  7. "V-junction": a novel structure for high-speed generation of bespoke droplet flows.

    Science.gov (United States)

    Ding, Yun; Casadevall i Solvas, Xavier; deMello, Andrew

    2015-01-21

    We present the use of microfluidic "V-junctions" as a droplet generation strategy that incorporates enhanced performance characteristics when compared to more traditional "T-junction" formats. This includes the ability to generate target-sized droplets from the very first one, efficient switching between multiple input samples, the production of a wide range of droplet sizes (and size gradients) and the facile generation of droplets with residence time gradients. Additionally, the use of V-junction droplet generators enables the suspension and subsequent resumption of droplet flows at times defined by the user. The high degree of operational flexibility allows a wide range of droplet sizes, payloads, spacings and generation frequencies to be obtained, which in turn provides for an enhanced design space for droplet-based experimentation. We show that the V-junction retains the simplicity of operation associated with T-junction formats, whilst offering functionalities normally associated with droplet-on-demand technologies.

  8. High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

    KAUST Repository

    Amara, Selma.; Sevilla, Gallo. A. Torres; Hawsawi, Mayyada.; Mashraei, Yousof.; Mohammed, Hanan .; Cruz, Melvin E.; Ivanov, Yurii. P.; Jaiswal, Samridh.; Jakob, Gerhard.; Klä ui, Mathias.; Hussain, Muhammad.; Kosel, Jurgen.

    2018-01-01

    , where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this progress. For many high-performance applications, magnetic tunnel junctions (MTJs) have become the first

  9. Reproducible low-voltage resistive switching in a low-initial-resistance Pr0.7Ca0.3MnO3 junction

    International Nuclear Information System (INIS)

    Li Songlin; Gang Jianlei; Li Jie; Chu Haifeng; Zheng Dongning

    2008-01-01

    Current-voltage (I-V) characteristics are investigated in a low-initial-resistance Ag/Pr 0.7 Ca 0.3 MnO 3 /Pt sandwich structure. It is found that the junction can show stable low and high resistance states in ±0.3 V voltage sweeping cycles. The set and reset voltage values are, respectively, +0.1 V and -0.2 V, which are very low as compared with those reported previously. Furthermore, the I-V curves in both resistance states exhibit rather linear behaviour, without any signature of metal/insulator interface effects. This implies that the Schottky interface mechanism might not be an indispensable factor for the colossal electroresistance effect. The origin of low switching voltages is attributed to the reduced effective distance for electric field action due to the sufficient oxygen content of the PCMO layer. The underlying physics is discussed in terms of the filament network model together with the field-induced oxygen vacancy motion model

  10. Innovative architecture design for high performance organic and hybrid multi-junction solar cells

    Science.gov (United States)

    Li, Ning; Spyropoulos, George D.; Brabec, Christoph J.

    2017-08-01

    The multi-junction concept is especially attractive for the photovoltaic (PV) research community owing to its potential to overcome the Schockley-Queisser limit of single-junction solar cells. Tremendous research interests are now focused on the development of high-performance absorbers and novel device architectures for emerging PV technologies, such as organic and perovskite PVs. It has been predicted that the multi-junction concept is able to boost the organic and perovskite PV technologies approaching the 20% and 30% benchmarks, respectively, showing a bright future of commercialization of the emerging PV technologies. In this contribution, we will demonstrate innovative architecture design for solution-processed, highly functional organic and hybrid multi-junction solar cells. A simple but elegant approach to fabricating organic and hybrid multi-junction solar cells will be introduced. By laminating single organic/hybrid solar cells together through an intermediate layer, the manufacturing cost and complexity of large-scale multi-junction solar cells can be significantly reduced. This smart approach to balancing the photocurrents as well as open circuit voltages in multi-junction solar cells will be demonstrated and discussed in detail.

  11. Response of thick-film bridge junction of high-Tc YBCO to nuclear radiation

    International Nuclear Information System (INIS)

    Ding Honglin; Wang Jun; Zhang Wanchang

    1992-01-01

    The response of thick-film Josephson junction based on high-T c YBCO to nuclear radiation is described. The lengths of the junction are 2000 μm, 1000 μm, and 500 μm and the widths are 500 μm, 300 μm and 100 μm. When the junction is irradiated by low energy γ-ray of 59.5 KeV from 241 Am at temperature of 77 K and the transport current I b is more than I c , the authors obtained the reduction of 1.6 mA of critical current and volt-signal as high as 17 μV without amplifier. It has been noted that the signal amplitude is related to the distance between the junction and the radiation source. Finally the advantages and shortcomings of detector based on thick films of high T c YBCO are discussed in the paper

  12. Stability of fluxon motion in long Josephson junctions at high bias

    DEFF Research Database (Denmark)

    Pagano, S.; Sørensen, Mads Peter; Christiansen, Peter Leth

    1988-01-01

    In long Josephson junctions the motion of fluxons is revealed by the existence of current steps, zero-field steps, in the current-voltage characteristics. In this paper we investigate the stability of the fluxon motion when high values of the current bias are involved. The investigation is carried...... dissipations and of the junction length on the switching-current value is investigated. A simple boundary model is able to describe, for junctions of overlap geometry, the qualitative dependence of the switching current on the system parameters....

  13. Thermally activated phase slippage in high-Tc grain-boundary Josephson junctions

    International Nuclear Information System (INIS)

    Gross, R.; Chaudhari, P.; Dimos, D.; Gupta, A.; Koren, G.

    1990-01-01

    The effect of thermally activated phase slippage (TAPS) in YBa 2 Cu 3 O 7 grain-boundary Josephson junctions has been studied. TAPS has been found to be responsible for the dc noise voltage superimposed on the dc Josephson current near the transition temperature. Because of the reduced Josephson coupling energy of the grain-boundary junctions, which is caused by a reduced superconducting order parameter at the grain-boundary interface, TAPS is present over a considerable temperature range. The implications of TAPS on the applicability of high-T c Josephson junctions are outlined

  14. Thermally activated phase slippage in high- T sub c grain-boundary Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Gross, R.; Chaudhari, P.; Dimos, D.; Gupta, A.; Koren, G. (IBM Thomas J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598 (USA))

    1990-01-08

    The effect of thermally activated phase slippage (TAPS) in YBa{sub 2}Cu{sub 3}O{sub 7} grain-boundary Josephson junctions has been studied. TAPS has been found to be responsible for the dc noise voltage superimposed on the dc Josephson current near the transition temperature. Because of the reduced Josephson coupling energy of the grain-boundary junctions, which is caused by a reduced superconducting order parameter at the grain-boundary interface, TAPS is present over a considerable temperature range. The implications of TAPS on the applicability of high-{ital T}{sub {ital c}} Josephson junctions are outlined.

  15. Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application

    Energy Technology Data Exchange (ETDEWEB)

    Vera, E S; Loferski, J J; Spitzer, M; Schewchun, J

    1981-01-01

    The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.

  16. Evaluation of the nanotube intrinsic resistance across the tip-carbon nanotube-metal substrate junction by Atomic Force Microscopy.

    Science.gov (United States)

    Dominiczak, Maguy; Otubo, Larissa; Alamarguy, David; Houzé, Frédéric; Volz, Sebastian; Noël, Sophie; Bai, Jinbo

    2011-04-14

    Using an atomic force microscope (AFM) at a controlled contact force, we report the electrical signal response of multi-walled carbon nanotubes (MWCNTs) disposed on a golden thin film. In this investigation, we highlight first the theoretical calculation of the contact resistance between two types of conductive tips (metal-coated and doped diamond-coated), individual MWCNTs and golden substrate. We also propose a circuit analysis model to schematize the «tip-CNT-substrate» junction by means of a series-parallel resistance network. We estimate the contact resistance R of each contribution of the junction such as Rtip-CNT, RCNT-substrate and Rtip-substrate by using the Sharvin resistance model. Our final objective is thus to deduce the CNT intrinsic radial resistance taking into account the calculated electrical resistance values with the global resistance measured experimentally. An unwished electrochemical phenomenon at the tip apex has also been evidenced by performing measurements at different bias voltages with diamond tips. For negative tip-substrate bias, a systematic degradation in color and contrast of the electrical cartography occurs, consisting of an important and non-reversible increase of the measured resistance. This effect is attributed to the oxidation of some amorphous carbon areas scattered over the diamond layer covering the tip. For a direct polarization, the CNT and substrate surface can in turn be modified by an oxidation mechanism.

  17. Evaluation of the nanotube intrinsic resistance across the tip-carbon nanotube-metal substrate junction by Atomic Force Microscopy

    Directory of Open Access Journals (Sweden)

    Alamarguy David

    2011-01-01

    Full Text Available Abstract Using an atomic force microscope (AFM at a controlled contact force, we report the electrical signal response of multi-walled carbon nanotubes (MWCNTs disposed on a golden thin film. In this investigation, we highlight first the theoretical calculation of the contact resistance between two types of conductive tips (metal-coated and doped diamond-coated, individual MWCNTs and golden substrate. We also propose a circuit analysis model to schematize the «tip-CNT-substrate» junction by means of a series-parallel resistance network. We estimate the contact resistance R of each contribution of the junction such as R tip-CNT, R CNT-substrate and R tip-substrate by using the Sharvin resistance model. Our final objective is thus to deduce the CNT intrinsic radial resistance taking into account the calculated electrical resistance values with the global resistance measured experimentally. An unwished electrochemical phenomenon at the tip apex has also been evidenced by performing measurements at different bias voltages with diamond tips. For negative tip-substrate bias, a systematic degradation in color and contrast of the electrical cartography occurs, consisting of an important and non-reversible increase of the measured resistance. This effect is attributed to the oxidation of some amorphous carbon areas scattered over the diamond layer covering the tip. For a direct polarization, the CNT and substrate surface can in turn be modified by an oxidation mechanism.

  18. Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

    KAUST Repository

    Guan, Xinwei; Hu, Weijin; Haque, Mohammed; Wei, Nini; Liu, Zhixiong; Chen, Aitian; Wu, Tao

    2017-01-01

    Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite-based resistive switching (RS

  19. A study on heat resistance of high temperature resistant coating

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Liping; Wang, Xueying; Zhang, Qibin; Qin, Yanlong; Lin, Zhu [Research Institute of Engineering Technology of CNPC, Tianjin (China)

    2005-04-15

    A high temperature resistant coating has been developed, which is mainly for heavy oil production pipes deserved the serious corrosion. The coating has excellent physical and mechanical performance and corrosion resistance at room and high temperature. In order to simulate the underground working condition of heavy oil pipes,the heat resistance of the high temperature resistant coating has been studied. The development and a study on the heat resistance of the DHT high temperature resistance coating have been introduced in this paper

  20. A study on heat resistance of high temperature resistant coating

    International Nuclear Information System (INIS)

    Zhang, Liping; Wang, Xueying; Zhang, Qibin; Qin, Yanlong; Lin, Zhu

    2005-01-01

    A high temperature resistant coating has been developed, which is mainly for heavy oil production pipes deserved the serious corrosion. The coating has excellent physical and mechanical performance and corrosion resistance at room and high temperature. In order to simulate the underground working condition of heavy oil pipes,the heat resistance of the high temperature resistant coating has been studied. The development and a study on the heat resistance of the DHT high temperature resistance coating have been introduced in this paper

  1. Experimental investigation of high cycle thermal fatigue in a T-junction piping system

    Energy Technology Data Exchange (ETDEWEB)

    Selvam, P. Karthick; Kulenovic, Rudi; Laurien, Eckart [Stuttgart Univ. (Germany). Inst. of Nuclear Technology and Energy Systems (IKE)

    2015-10-15

    High cycle thermal fatigue damage of structure in the vicinity of T-junction piping systems in nuclear power plants is of importance. Mixing of coolant streams at significant temperature differences causes thermal fluctuations near piping wall leading to gradual thermal degradation. Flow mixing in a T-junction is performed. The determined factors result in bending stresses being imposed on the piping system ('Banana effect').

  2. High-temperature magnetoresistance study of a magnetic tunnel junction

    International Nuclear Information System (INIS)

    Chen, D.C.; Yao, Y.D.; Chen, C.M.; Hung, James; Chen, Y.S.; Wang, W.H.; Chen, W.C.; Kao, M.J.

    2006-01-01

    The thermal stability and the spin transportation phenomenon at room temperature and 140 deg. C of a series of magnetic tunneling junctions with the structure of bottom electrode/PtMn/Pinned layer/ AlO x /CoFe/NiFe/top electrode have been investigated. The MR ratio decreases from 33.5% at room temperature to 29% at 140 deg. C. The MR ratio at room temperature increases roughly 0.8% after thermal treatment at temperatures above 60 deg. C. This is related to the thermal relaxation of the strains existing in the samples

  3. Search for a proximity effect induced gap in gold/high Tc junctions

    International Nuclear Information System (INIS)

    Dessau, D.S.; Wells, B.O.; Shen, Z.; Spicer, W.E.; Arko, A.J.; List, R.S.; Olson, C.G.; Eom, C.B.; Mitzi, D.B.; Kapitulnik, A.; Geballe, T.H.

    1991-01-01

    We have used high-resolution photoemission spectroscopy to search for a proximity effect induced superconducting gap in gold overlayers on c-axis single crystals of Bi 2 Sr 2 CaCu 2 O 8 and a-axis thin films of YBa 2 Cu 3 O 7 . These two junction types give us a representative sampling of very well characterized near-ideal interfaces (gold/c-axis Bi 2 Sr 2 CaCu 2 O 8 ) and junctions in which the geometry more strongly favors the existence of the proximity effect but the interfacial quality may not be as ideal (gold/a-axis YBa 2 Cu 3 O 7 ). In neither of these junction types did we observe any evidence for a proximity effect induced gap, and we place an upper limit of approximately 5 meV on its existence in the junctions that we have studied

  4. Analysis of a No Equilibrium Linear Resistive-Capacitive-Inductance Shunted Junction Model, Dynamics, Synchronization, and Application to Digital Cryptography in Its Fractional-Order Form

    Directory of Open Access Journals (Sweden)

    Sifeu Takougang Kingni

    2017-01-01

    Full Text Available A linear resistive-capacitive-inductance shunted junction (LRCLSJ model obtained by replacing the nonlinear piecewise resistance of a nonlinear resistive-capacitive-inductance shunted junction (NRCLSJ model by a linear resistance is analyzed in this paper. The LRCLSJ model has two or no equilibrium points depending on the dc bias current. For a suitable choice of the parameters, the LRCLSJ model without equilibrium point can exhibit regular and fast spiking, intrinsic and periodic bursting, and periodic and chaotic behaviors. We show that the LRCLSJ model displays similar dynamical behaviors as the NRCLSJ model. Moreover the coexistence between periodic and chaotic attractors is found in the LRCLSJ model for specific parameters. The lowest order of the commensurate form of the no equilibrium LRCLSJ model to exhibit chaotic behavior is found to be 2.934. Moreover, adaptive finite-time synchronization with parameter estimation is applied to achieve synchronization of unidirectional coupled identical fractional-order form of chaotic no equilibrium LRCLSJ models. Finally, a cryptographic encryption scheme with the help of the finite-time synchronization of fractional-order chaotic no equilibrium LRCLSJ models is illustrated through a numerical example, showing that a high level security device can be produced using this system.

  5. High-performance passive microwave survey on Josephson junctions

    International Nuclear Information System (INIS)

    Denisov, A.G.; Radzikhovsky, V.N.; Kudeliya, A.M.

    1994-01-01

    The quasi-optical generations of image of objects with their internal structure in millimeter (MM) and submillimeter (SMM) bands is one of the prime problems of modern radioelectronics. The main advantage of passive MM imaging systems in comparison with visible and infrared (IR) systems is small attenuation of signals in fog, cloud, smoke, dust and other obscurants. However at a panoramic scanning of space the observation time lengthens and thereby the information processing rate becomes restricted. So that single-channel system cannot image in real time. Therefore we must use many radiometers in parallel to reduce the observation time. Such system must contain receiving sensors as pixels in multibeam antenna. The use of Josephson Junctions (JJ) for this purpose together with the cryoelectronic devices like GaAs FET or SQUIDS for signal amplifications after JJ is of particular interest in this case

  6. High-performance passive microwave survey on Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Denisov, A.G.; Radzikhovsky, V.N.; Kudeliya, A.M. [State Research Center of Superconductive Radioelectronics, Kiev (Ukraine)

    1994-12-31

    The quasi-optical generations of image of objects with their internal structure in millimeter (MM) and submillimeter (SMM) bands is one of the prime problems of modern radioelectronics. The main advantage of passive MM imaging systems in comparison with visible and infrared (IR) systems is small attenuation of signals in fog, cloud, smoke, dust and other obscurants. However at a panoramic scanning of space the observation time lengthens and thereby the information processing rate becomes restricted. So that single-channel system cannot image in real time. Therefore we must use many radiometers in parallel to reduce the observation time. Such system must contain receiving sensors as pixels in multibeam antenna. The use of Josephson Junctions (JJ) for this purpose together with the cryoelectronic devices like GaAs FET or SQUIDS for signal amplifications after JJ is of particular interest in this case.

  7. Impurity scattering effect on charge transport in high-Tc cuprate junctions

    International Nuclear Information System (INIS)

    Tanaka, Y.; Asano, Y.; Kashiwaya, S.

    2004-01-01

    It is known that the zero-bias conductance peak (ZBCP) is expected in tunneling spectra of normal-metal/high-Tc cuprate junctions because of the formation of the midgap Andreev resonant states (MARS) at junction interfaces. In the present review, we report the recent theoretical study of impurity scattering effects on the tunneling spectroscopy. In the former part of the present paper, we discuss impurity effects in normal metal. We calculate tunneling conductance for diffusive normal metal (DN)/high Tc cuprate junctions based on the Keldysh Green's function technique. Besides the ZBCP due to the MARS, we can expect ZBCP caused by the different origin, i.e., the coherent Andreev reflection (CAR) assisted by the proximity effect in DN. Their relative importance depends on the angle a between the interface normal and the crystal axis of high-Tc superconductors. At α = 0, we find the ZBCP by the CAR for low transparent junctions with small Thouless energies in DN; this is similar to the case of diffusive normal metal/insulator/s-wave superconductor junctions. Under increase of α from zero to π/4, the contribution of MARS to ZBCP becomes more prominent and the effect of the CAR is gradually suppressed. Such complex spectral features would be observable in conductance spectra of high-Tc junctions at very low temperatures. In the latter part of our paper, we study impurity effects in superconductors. We consider impurities near the junction interface on the superconductor side. The conductance is calculated from the Andreev and the normal reflection coefficients which are estimated by using the single-site approximation in an analytic calculation and by the recursive Green function method in a numerical simulation. We find splitting of the ZBCP in the presence of the time reversal symmetry. Thus the zero-field splitting of ZBCP in the experiment does not perfectly prove an existence of broken time reversal symmetry state

  8. Mesoscopic conductance fluctuations in high-T{sub c} grain boundary Josephson junctions: Coherent quasiparticle transport

    Energy Technology Data Exchange (ETDEWEB)

    Tafuri, F. [Dip. Ingegneria dell' Informazione, Seconda Universita di Napoli, 81031 Aversa (Italy); CNR-INFM Coherentia, Dip. Scienze Fisiche, Universita di Napoli Federico II, 80125 Naples (Italy)], E-mail: tafuri@na.infn.it; Tagliacozzo, A.; Born, D.; Stornaiuolo, D. [CNR-INFM Coherentia, Dip. Scienze Fisiche, Universita di Napoli Federico II, 80125 Naples (Italy); Gambale, E.; Dalena, D. [Dip. Ingegneria dell' Informazione, Seconda Universita di Napoli, 81031 Aversa (Italy); Lombardi, F. [Department of Microelectronics and Nanoscience, MINA, Chalmers University of Technology, 41296 Goeteborg (Sweden)

    2007-09-01

    Magneto-fluctuations of the normal resistance R{sub N} have been reproducibly observed in YBa{sub 2}Cu{sub 3}O{sub 7-{delta}} (HTS) biepitaxial grain boundary junctions at low temperatures. We attribute them to mesoscopic transport in narrow channels across the grain boundary line. The Thouless energy appears to be the relevant energy scale. Possible implications on the understanding of coherent transport of quasiparticles in HTS and of the dissipation mechanisms are discussed.

  9. Structure-property relations and crack resistance at the bovine dentin-enamel junction.

    Science.gov (United States)

    Lin, C P; Douglas, W H

    1994-05-01

    The present report is a study of the fracture behavior of the dentin-enamel complex, involving enamel, dentin, and the dentin-enamel junction (DEJ), that combines experimental design, computational finite element analysis, and fractography. Seven chevron-notched short-bar bovine DEJ specimens were utilized in this study. The general plane of the DEJ was approximately perpendicular to the fracture plane. All specimens were stored at 37 degrees C and 100% relative humidity for 24 h prior to being tested. A fracture test set-up was designed for application of tensile load on the DEJ specimens to initiate a crack at the vertex of the chevron in the enamel, across the DEJ zone and into the bulk dentin. During fracture testing, a water chamber was used to avoid dehydration of the specimen. The results showed that the lower boundary value of the fracture toughness of the DEJ perpendicular to its own plane was 3.38 +/- 0.40 MN/m1.5 and 988.42 +/- 231.39 J/m2, in terms of KIC and GKC, respectively. In addition, there was an extensive plastic deformation (83 +/- 12%) collateral to the fracture process at the DEJ zone. The fractography revealed that the deviation of the crak path involved an area which was approximately 50-100 microns deep. The parallel-oriented coarse collagen bundles with diameters of 1-5 microns at the DEJ zone may play a significant role in resisting the enamel crack. This reflects the fact, that in the intact tooth, the multiple full thickness cracks commonly found in enamel do not typically cause total failure of the tooth by crack extension into the dentin.

  10. Effect of Abrikosov vortices on Josephson junction currents in high temperature superconductors

    International Nuclear Information System (INIS)

    Mitchell, E.; Mueller, K.-H.

    2000-01-01

    Full text: The current-carrying capacity of high temperature superconductors (HTS) is limited by the weak links which form between individual grains. We investigate the role of Abrikosov vortices (AV) and inhomogeneities at the intergrain boundary by examining the high magnetic field characteristics of HTS thin film grain boundary junctions. We model the effects of junction inhomogeneity, AV's and vortex pinning by solving the inhomogeneous London equation. The calculations show that both inhomogeneities and the presence of AV's improve the current-carrying capacity across grain boundaries at high magnetic fields. Our experimental measurements of the irreversibility of the junction critical current density J c (H a ) find good agreement with the model

  11. Concretes with high mechanical resistance

    International Nuclear Information System (INIS)

    Mauny, Pierre.

    1973-01-01

    Description is given of a method for manufacturing concretes with high mechanical resistance in compression, obtained by mixing gravels highly resistant to compression, sand and cement in an aqueous medium. Use is made of sands of porous ceramics, such as terra-cotta, of a grain size from 0,1 to 5mm, the pore diameter of which is from 0.5 to 15 microns, chosen so as to be slighty bigger than the crystals of the cement used. This can be applied to the pre-stressed structures used in the nuclear field [fr

  12. Large resistance change on magnetic tunnel junction based molecular spintronics devices

    Science.gov (United States)

    Tyagi, Pawan; Friebe, Edward

    2018-05-01

    Molecular bridges covalently bonded to two ferromagnetic electrodes can transform ferromagnetic materials and produce intriguing spin transport characteristics. This paper discusses the impact of molecule induced strong coupling on the spin transport. To study molecular coupling effect the octametallic molecular cluster (OMC) was bridged between two ferromagnetic electrodes of a magnetic tunnel junction (Ta/Co/NiFe/AlOx/NiFe/Ta) along the exposed side edges. OMCs induced strong inter-ferromagnetic electrode coupling to yield drastic changes in transport properties of the magnetic tunnel junction testbed at the room temperature. These OMCs also transformed the magnetic properties of magnetic tunnel junctions. SQUID and ferromagnetic resonance studies provided insightful data to explain transport studies on the magnetic tunnel junction based molecular spintronics devices.

  13. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    Science.gov (United States)

    Gu, Lei; Fu, Hua-Hua

    2015-12-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I-V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I-V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems.

  14. Current-induced forces: a new mechanism to induce negative differential resistance and current-switching effect in molecular junctions

    International Nuclear Information System (INIS)

    Gu, Lei; Fu, Hua-Hua

    2015-01-01

    Current-induced forces can excite molecules, polymers and other low-dimensional materials, which in turn leads to an effective gate voltage through Holstein interaction. Here, by taking a short asymmetric DNA junction as an example, and using the Langevin approach, we find that when suppression of charge transport by the effective gate voltage surpasses the current increase from an elevated voltage bias, the current-voltage (I–V) curves display strong negative differential resistance (NDR) and perfect current-switching characteristics. The asymmetric DNA chain differs in mechanical stability under inverse voltages and the I–V curve is asymmetric about inverse biases, which can be used to understand recent transport experiments on DNA chains, and meanwhile provides a new strategy to realize NDR in molecular junctions and other low-dimensional quantum systems. (paper)

  15. Applying the Network Simulation Method for testing chaos in a resistively and capacitively shunted Josephson junction model

    Directory of Open Access Journals (Sweden)

    Fernando Gimeno Bellver

    Full Text Available In this paper, we explore the chaotic behavior of resistively and capacitively shunted Josephson junctions via the so-called Network Simulation Method. Such a numerical approach establishes a formal equivalence among physical transport processes and electrical networks, and hence, it can be applied to efficiently deal with a wide range of differential systems.The generality underlying that electrical equivalence allows to apply the circuit theory to several scientific and technological problems. In this work, the Fast Fourier Transform has been applied for chaos detection purposes and the calculations have been carried out in PSpice, an electrical circuit software.Overall, it holds that such a numerical approach leads to quickly computationally solve Josephson differential models. An empirical application regarding the study of the Josephson model completes the paper. Keywords: Electrical analogy, Network Simulation Method, Josephson junction, Chaos indicator, Fast Fourier Transform

  16. Thermal Resistance across Interfaces Comprising Dimensionally Mismatched Carbon Nanotube-Graphene Junctions in 3D Carbon Nanomaterials

    Directory of Open Access Journals (Sweden)

    Jungkyu Park

    2014-01-01

    Full Text Available In the present study, reverse nonequilibrium molecular dynamics is employed to study thermal resistance across interfaces comprising dimensionally mismatched junctions of single layer graphene floors with (6,6 single-walled carbon nanotube (SWCNT pillars in 3D carbon nanomaterials. Results obtained from unit cell analysis indicate the presence of notable interfacial thermal resistance in the out-of-plane direction (along the longitudinal axis of the SWCNTs but negligible resistance in the in-plane direction along the graphene floor. The interfacial thermal resistance in the out-of-plane direction is understood to be due to the change in dimensionality as well as phonon spectra mismatch as the phonons propagate from SWCNTs to the graphene sheet and then back again to the SWCNTs. The thermal conductivity of the unit cells was observed to increase nearly linearly with an increase in cell size, that is, pillar height as well as interpillar distance, and approaches a plateau as the pillar height and the interpillar distance approach the critical lengths for ballistic thermal transport in SWCNT and single layer graphene. The results indicate that the thermal transport characteristics of these SWCNT-graphene hybrid structures can be tuned by controlling the SWCNT-graphene junction characteristics as well as the unit cell dimensions.

  17. High-Performance Flexible Magnetic Tunnel Junctions for Smart Miniaturized Instruments

    KAUST Repository

    Amara, Selma.

    2018-04-04

    Flexible electronics is an emerging field in many applications ranging from in vivo biomedical devices to wearable smart systems. The capability of conforming to curved surfaces opens the door to add electronic components to miniaturized instruments, where size and weight are critical parameters. Given their prevalence on the sensors market, flexible magnetic sensors play a major role in this progress. For many high-performance applications, magnetic tunnel junctions (MTJs) have become the first choice, due to their high sensitivity, low power consumption etc. MTJs are also promising candidates for non-volatile next-generation data storage media and, hence, could become central components of wearable electronic devices. In this work, a generic low-cost regenerative batch fabrication process is utilized to transform rigid MTJs on a 500 {\\\\mu}m silicon wafer substrate into 5 {\\\\mu}m thin, mechanically flexible silicon devices, and ensuring optimal utilization of the whole substrate. This method maintains the outstanding magnetic properties, which are only obtained by deposition of the MTJ on smooth high-quality silicon wafers. The flexible MTJs are highly reliable and resistive to mechanical stress. Bending of the MTJ stacks with a diameter as small as 500 {\\\\mu}m is possible without compromising their performance and an endurance of over 1000 cycles without fatigue has been demonstrated. The flexible MTJs were mounted onto the tip of a cardiac catheter with 2 mm in diameter without compromising their performance. This enables the detection of magnetic fields and the angle which they are applied at with a high sensitivity of 4.93 %/Oe and a low power consumption of 0.15 {\\\\mu}W, while adding only 8 {\\\\mu}g and 15 {\\\\mu}m to the weight and diameter of the catheter, respectively.

  18. Gap Junctions

    Science.gov (United States)

    Nielsen, Morten Schak; Axelsen, Lene Nygaard; Sorgen, Paul L.; Verma, Vandana; Delmar, Mario; Holstein-Rathlou, Niels-Henrik

    2013-01-01

    Gap junctions are essential to the function of multicellular animals, which require a high degree of coordination between cells. In vertebrates, gap junctions comprise connexins and currently 21 connexins are known in humans. The functions of gap junctions are highly diverse and include exchange of metabolites and electrical signals between cells, as well as functions, which are apparently unrelated to intercellular communication. Given the diversity of gap junction physiology, regulation of gap junction activity is complex. The structure of the various connexins is known to some extent; and structural rearrangements and intramolecular interactions are important for regulation of channel function. Intercellular coupling is further regulated by the number and activity of channels present in gap junctional plaques. The number of connexins in cell-cell channels is regulated by controlling transcription, translation, trafficking, and degradation; and all of these processes are under strict control. Once in the membrane, channel activity is determined by the conductive properties of the connexin involved, which can be regulated by voltage and chemical gating, as well as a large number of posttranslational modifications. The aim of the present article is to review our current knowledge on the structure, regulation, function, and pharmacology of gap junctions. This will be supported by examples of how different connexins and their regulation act in concert to achieve appropriate physiological control, and how disturbances of connexin function can lead to disease. © 2012 American Physiological Society. Compr Physiol 2:1981-2035, 2012. PMID:23723031

  19. Forward voltage short-pulse technique for measuring high power laser array junction temperature

    Science.gov (United States)

    Meadows, Byron L. (Inventor); Amzajerdian, Frazin (Inventor); Barnes, Bruce W. (Inventor); Baker, Nathaniel R. (Inventor)

    2012-01-01

    The present invention relates to a method of measuring the temperature of the P-N junction within the light-emitting region of a quasi-continuous-wave or pulsed semiconductor laser diode device. A series of relatively short and low current monitor pulses are applied to the laser diode in the period between the main drive current pulses necessary to cause the semiconductor to lase. At the sufficiently low current level of the monitor pulses, the laser diode device does not lase and behaves similar to an electronic diode. The voltage across the laser diode resulting from each of these low current monitor pulses is measured with a high degree of precision. The junction temperature is then determined from the measured junction voltage using their known linear relationship.

  20. Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions

    DEFF Research Database (Denmark)

    Petersen, Dirch Hjorth; Lin, Rong; Hansen, Torben Mikael

    2008-01-01

    have been used to characterize the sheet resistance uniformity of millisecond laser annealed USJs. They verify, both experimentally and theoretically, that the probe pitch of a four-point probe can strongly affect the measured sheet resistance. Such effect arises from the sensitivity (or "spot size......In this comparative study, the authors demonstrate the relationship/correlation between macroscopic and microscopic four-point sheet resistance measurements on laser annealed ultra-shallow junctions (USJs). Microfabricated cantilever four-point probes with probe pitch ranging from 1.5 to 500 mu m......") of an in-line four-point probe. Their study shows the benefit of the spatial resolution of the micro four-point probe technique to characterize stitching effects resulting from the laser annealing process....

  1. Spontaneous and Selective Nanowelding of Silver Nanowires by Electrochemical Ostwald Ripening and High Electrostatic Potential at the Junctions for High-Performance Stretchable Transparent Electrodes.

    Science.gov (United States)

    Lee, Hyo-Ju; Oh, Semi; Cho, Ki-Yeop; Jeong, Woo-Lim; Lee, Dong-Seon; Park, Seong-Ju

    2018-04-25

    Metal nanowires have been gaining increasing attention as the most promising stretchable transparent electrodes for emerging field of stretchable optoelectronic devices. Nanowelding technology is a major challenge in the fabrication of metal nanowire networks because the optoelectronic performances of metal nanowire networks are mostly limited by the high junction resistance between nanowires. We demonstrate the spontaneous and selective welding of Ag nanowires (AgNWs) by Ag solders via an electrochemical Ostwald ripening process and high electrostatic potential at the junctions of AgNWs. The AgNWs were welded by depositing Ag nanoparticles (AgNPs) on the conducting substrate and then exposing them to water at room temperature. The AgNPs were spontaneously dissolved in water to form Ag + ions, which were then reduced to single-crystal Ag solders selectively at the junctions of the AgNWs. Hence, the welded AgNWs showed higher optoelectronic and stretchable performance compared to that of as-formed AgNWs. These results indicate that electrochemical Ostwald ripening-based welding can be used as a promising method for high-performance metal nanowire electrodes in various next-generation devices such as stretchable solar cells, stretchable displays, organic light-emitting diodes, and skin sensors.

  2. Monolithic junction field-effect transistor charge preamplifier for calorimetry at high luminosity hadron colliders

    International Nuclear Information System (INIS)

    Radeka, V.; Rescia, S.; Rehn, L.A.; Manfredi, P.F.; Speziali, V.

    1991-11-01

    The outstanding noise and radiation hardness characteristics of epitaxial-channel junction field-effect transistors (JFET) suggest that a monolithic preamplifier based upon them may be able to meet the strict specifications for calorimetry at high luminosity colliders. Results obtained so far with a buried layer planar technology, among them an entire monolithic charge-sensitive preamplifier, are described

  3. CSReport: A New Computational Tool Designed for Automatic Analysis of Class Switch Recombination Junctions Sequenced by High-Throughput Sequencing.

    Science.gov (United States)

    Boyer, François; Boutouil, Hend; Dalloul, Iman; Dalloul, Zeinab; Cook-Moreau, Jeanne; Aldigier, Jean-Claude; Carrion, Claire; Herve, Bastien; Scaon, Erwan; Cogné, Michel; Péron, Sophie

    2017-05-15

    B cells ensure humoral immune responses due to the production of Ag-specific memory B cells and Ab-secreting plasma cells. In secondary lymphoid organs, Ag-driven B cell activation induces terminal maturation and Ig isotype class switch (class switch recombination [CSR]). CSR creates a virtually unique IgH locus in every B cell clone by intrachromosomal recombination between two switch (S) regions upstream of each C region gene. Amount and structural features of CSR junctions reveal valuable information about the CSR mechanism, and analysis of CSR junctions is useful in basic and clinical research studies of B cell functions. To provide an automated tool able to analyze large data sets of CSR junction sequences produced by high-throughput sequencing (HTS), we designed CSReport, a software program dedicated to support analysis of CSR recombination junctions sequenced with a HTS-based protocol (Ion Torrent technology). CSReport was assessed using simulated data sets of CSR junctions and then used for analysis of Sμ-Sα and Sμ-Sγ1 junctions from CH12F3 cells and primary murine B cells, respectively. CSReport identifies junction segment breakpoints on reference sequences and junction structure (blunt-ended junctions or junctions with insertions or microhomology). Besides the ability to analyze unprecedentedly large libraries of junction sequences, CSReport will provide a unified framework for CSR junction studies. Our results show that CSReport is an accurate tool for analysis of sequences from our HTS-based protocol for CSR junctions, thereby facilitating and accelerating their study. Copyright © 2017 by The American Association of Immunologists, Inc.

  4. Differential conductance measurements of low-resistance CoFeB/MgO/CoFeB magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Nishioka, S.; Hamada, Y.V.; Matsumoto, R.; Mizuguchi, M.; Shiraishi, M.; Fukushima, A.; Kubota, H.; Nagahama, T.; Yuasa, S.; Maehara, H.; Nagamine, Y.; Tsunekawa, K.; Djayaprawira, D.D.; Watanabe, N.; Suzuki, Y.

    2007-01-01

    We measured differential conductance spectra of magnetic tunnel junctions (MTJs) with thin MgO barrier and low-resistance area product. The spectra of MTJs with MgO barrier thicker than 1.05 nm were essentially the same except for slight decrease of contributions from low-energy excitations, such as magnons. The spectra of MTJ with 1.01 nm MgO barrier were thoroughly different from the MTJs with thicker barrier. The result reveals that an MTJ with very thin MgO barrier thickness has different conduction characteristics from those with thicker MgO barriers

  5. Negative differential resistance observed from vertical p+-n+ junction device with two-dimensional black phosphorous

    Science.gov (United States)

    Lee, Daeyeong; Jang, Young Dae; Kweon, Jaehwan; Ryu, Jungjin; Hwang, Euyheon; Yoo, Won Jong; Samsung-SKKU Graphene/2D Center (SSGC) Collaboration

    A vertical p+-n+ homojunction was fabricated by using black phosphorus (BP) as a van der Waals two-dimensional (2D) material. The top and bottom layers of the materials were doped by chemical dopants of gold chloride (AuCl3) for p-type doping and benzyl viologen (BV) for n-type doping. The negative differential resistance (NDR) effect was clearly observed from the output curves of the fabricated BP vertical devices. The thickness range of the 2D material showing NDR and the peak to valley current ratio of NDR are found to be strongly dependent on doping condition, gate voltage, and BP's degradation level. Furthermore, the carrier transport of the p+-n+ junction was simulated by using density functional theory (DFT) and non-equilibrium Green's function (NEGF). Both the experimental and simulation results confirmed that the NDR is attributed to the band-to-band tunneling (BTBT) across the 2D BP p+-n+ junction, and further quantitative details on the carrier transport in the vertical p+-n+ junction devices were explored, according to the analyses of the measured transfer curves and the DFT simulation results. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2013R1A2A2A01015516).

  6. Josephson junctions with ferromagnetic interlayer

    International Nuclear Information System (INIS)

    Wild, Georg Hermann

    2012-01-01

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO x /Pd 0.82 Ni 0.18 /Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to π-coupling is observed for a thickness d F =6 nm of the ferromagnetic Pd 0.82 Ni 0.18 interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd 0.82 Ni 0.18 has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  7. Josephson junctions with ferromagnetic interlayer

    Energy Technology Data Exchange (ETDEWEB)

    Wild, Georg Hermann

    2012-03-04

    We report on the fabrication of superconductor/insulator/ferromagnetic metal/superconductor (Nb/AlO{sub x}/Pd{sub 0.82}Ni{sub 0.18}/Nb) Josephson junctions (SIFS JJs) with high critical current densities, large normal resistance times area products, and high quality factors. For these junctions, a transition from 0- to {pi}-coupling is observed for a thickness d{sub F}=6 nm of the ferromagnetic Pd{sub 0.82}Ni{sub 0.18} interlayer. The magnetic field dependence of the critical current of the junctions demonstrates good spatial homogeneity of the tunneling barrier and ferromagnetic interlayer. Magnetic characterization shows that the Pd{sub 0.82}Ni{sub 0.18} has an out-of-plane anisotropy and large saturation magnetization indicating negligible dead layers at the interfaces. A careful analysis of Fiske modes up to about 400 GHz provides valuable information on the junction quality factor and the relevant damping mechanisms. Whereas losses due to quasiparticle tunneling dominate at low frequencies, at high frequencies the damping is explained by the finite surface resistance of the junction electrodes. High quality factors of up to 30 around 200 GHz have been achieved. They allow to study the junction dynamics, in particular the switching probability from the zero-voltage into the voltage state with and without microwave irradiation. The experiments with microwave irradiation are well explained within semi-classical models and numerical simulations. In contrast, at mK temperature the switching dynamics without applied microwaves clearly shows secondary quantum effects. Here, we could observe for the first time macroscopic quantum tunneling in Josephson junctions with a ferromagnetic interlayer. This observation excludes fluctuations of the critical current as a consequence of an unstable magnetic domain structure of the ferromagnetic interlayer and affirms the suitability of SIFS Josephson junctions for quantum information processing.

  8. Gap junctions suppress electrical but not [Ca(2+)] heterogeneity in resistance arteries

    DEFF Research Database (Denmark)

    Hald, Bjørn Olav; Welsh, Donald G; von Holstein-Rathlou, Niels-Henrik

    2014-01-01

    arises, a virtual arteriole was developed that introduces variation in the activities of ion-transport proteins between cells. By varying the level of heterogeneity and subpopulations of gap junctions (GJs), the resulting simulations shows that GJs suppress electrical variation but can only reduce...

  9. Novel Junction-specific and Quantifiable In Situ Detection of AR-V7 and its Clinical Correlates in Metastatic Castration-resistant Prostate Cancer.

    Science.gov (United States)

    Zhu, Yezi; Sharp, Adam; Anderson, Courtney M; Silberstein, John L; Taylor, Maritza; Lu, Changxue; Zhao, Pei; De Marzo, Angelo M; Antonarakis, Emmanuel S; Wang, Mindy; Wu, Xingyong; Luo, Yuling; Su, Nan; Nava Rodrigues, Daniel; Figueiredo, Ines; Welti, Jonathan; Park, Emily; Ma, Xiao-Jun; Coleman, Ilsa; Morrissey, Colm; Plymate, Stephen R; Nelson, Peter S; de Bono, Johann S; Luo, Jun

    2018-05-01

    Androgen receptor splice variant 7 (AR-V7) has been implicated in resistance to abiraterone and enzalutamide treatment in men with metastatic castration-resistant prostate cancer (mCRPC). Tissue- or cell-based in situ detection of AR-V7, however, has been limited by lack of specificity. To address current limitations in precision measurement of AR-V7 by developing a novel junction-specific AR-V7 RNA in situ hybridization (RISH) assay compatible with automated quantification. We designed a RISH method to visualize single splice junctions in cells and tissue. Using the validated assay for junction-specific detection of the full-length AR (AR-FL) and AR-V7, we generated quantitative data, blinded to clinical data, for 63 prostate tumor biopsies. We evaluated clinical correlates of AR-FL/AR-V7 measurements, including association with prostate-specific antigen progression-free survival (PSA-PFS) and clinical and radiographic progression-free survival (PFS), in a subset of patients starting treatment with abiraterone or enzalutamide following biopsy. Quantitative AR-FL/AR-V7 data were generated from 56 of the 63 (88.9%) biopsy specimens examined, of which 44 were mCRPC biopsies. Positive AR-V7 signals were detected in 34.1% (15/44) mCRPC specimens, all of which also co-expressed AR-FL. The median AR-V7/AR-FL ratio was 11.9% (range 2.7-30.3%). Positive detection of AR-V7 was correlated with indicators of high disease burden at baseline. Among the 25 CRPC biopsies collected before treatment with abiraterone or enzalutamide, positive AR-V7 detection, but not higher AR-FL, was significantly associated with shorter PSA-PFS (hazard ratio 2.789, 95% confidence interval 1.12-6.95; p=0.0081). We report for the first time a RISH method for highly specific and quantifiable detection of splice junctions, allowing further characterization of AR-V7 and its clinical significance. Higher AR-V7 levels detected and quantified using a novel method were associated with poorer response to

  10. A real time measurement of junction temperature variation in high power IGBT modules for wind power converter application

    DEFF Research Database (Denmark)

    Ghimire, Pramod; Pedersen, Kristian Bonderup; de Vega, Angel Ruiz

    2014-01-01

    This paper presents a real time measurement of on-state forward voltage and estimating the junction temperature for a high power IGBT module during a power converter operation. The power converter is realized as it can be used for a wind turbine system. The peak of the junction temperature is dec...

  11. Effects of the phase periodicity on the quantum dynamics of a resistively shunted Josephson junction

    International Nuclear Information System (INIS)

    Zwerger, W.; Dorsey, A.T.; Fisher, M.P.A.

    1986-01-01

    A phenomenological model is introduced for the dissipative quantum dynamics of the phase phi across a current-biased Josephson junction. The model is invariant under phi→phi+2π. This enables us to restrict phi to the interval 0 to 2π, equating phi+2π with phi, and study the role played by the resulting nontrivial topology. Using Feynman's influence functional theory it is shown that the dissipation suppresses interference between paths with different winding numbers. For Ohmic dissipation this interference is completely destroyed, and phi can effectively be treated as an extended coordinate. This justifies the use of the usual washboard potential description of a current-biased junction even in the quantum case, provided an Ohmic dissipation mechanism is present

  12. L10-MnGa based magnetic tunnel junction for high magnetic field sensor

    Science.gov (United States)

    Zhao, X. P.; Lu, J.; Mao, S. W.; Yu, Z. F.; Wang, H. L.; Wang, X. L.; Wei, D. H.; Zhao, J. H.

    2017-07-01

    We report on the investigation of the magnetic tunnel junction structure designed for high magnetic field sensors with a perpendicularly magnetized L10-MnGa reference layer and an in-plane magnetized Fe sensing layer. A large linear tunneling magnetoresistance ratio up to 27.4% and huge dynamic range up to 5600 Oe have been observed at 300 K, with a low nonlinearity of 0.23% in the optimized magnetic tunnel junction (MTJ). The field response of tunneling magnetoresistance is discussed to explain the field sensing properties in the dynamic range. These results indicate that L10-MnGa based orthogonal MTJ is a promising candidate for a high performance magnetic field sensor with a large dynamic range, high endurance and low power consumption.

  13. Composition and adaptation of human myotendinous junction and neighboring muscle fibers to heavy resistance training

    DEFF Research Database (Denmark)

    Jakobsen, Jens R.; Mackey, A L; Knudsen, A B

    2017-01-01

    The myotendinous junction (MTJ) is a common site of strain injury and yet understanding of its composition and ability to adapt to loading is poor. The main aims of this study were to determine the profile of selected collagens and macrophage density in human MTJ and adjoining muscle fibers...... 4 weeks of training may reflect a training-induced protection against strain injuries in this region....

  14. Development of materials for high temperature superconductor Josephson junctions

    International Nuclear Information System (INIS)

    Houlton, R.J.; Reagor, D.W.; Hawley, M.E.; Springer, K.N.; Jia, Q.X.; Mombourquette, C.B.; Garzon, F.H.; Wu, X.D.

    1994-01-01

    We have conducted a systematic optimization of deposition parameters for fabrication of multilayered oxide films to be used in the development of high temperature superconducting SNS Functions. These films were deposited by off-axis sputtering using a custom fabricated multi-gun planar magnetron system. Each material and the various combinations of materials were optimized for epitaxial lattice match, crystal quality, film uniformity, electrical properties, and surface microstructure. In addition to the standard procedures commonly used to sputter deposit epitaxial oxide films, a variety of insitu and exsitu procedures were used to produce high quality multilayer devices, including varying the nucleation temperature from the actual film growth temperature, location of the substrate during the deposition process, constant rotation of the substrate, and timing of the oxygen anneal. The unprocessed films and devices in process were characterized with Atomic Force Microscopy and Scanning Tunneling Microscopy as well as other common materials characterization techniques. Completed multilayer devices were patterned and packaged for electrical characterization. Relation between material properties and electrical characteristics is discussed

  15. Development of materials for high temperature superconductor Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Houlton, R.J.; Reagor, D.W.; Hawley, M.E.; Springer, K.N.; Jia, Q.X.; Mombourquette, C.B.; Garzon, F.H.; Wu, X.D.

    1994-10-01

    We have conducted a systematic optimization of deposition parameters for fabrication of multilayered oxide films to be used in the development of high temperature superconducting SNS Functions. These films were deposited by off-axis sputtering using a custom fabricated multi-gun planar magnetron system. Each material and the various combinations of materials were optimized for epitaxial lattice match, crystal quality, film uniformity, electrical properties, and surface microstructure. In addition to the standard procedures commonly used to sputter deposit epitaxial oxide films, a variety of insitu and exsitu procedures were used to produce high quality multilayer devices, including varying the nucleation temperature from the actual film growth temperature, location of the substrate during the deposition process, constant rotation of the substrate, and timing of the oxygen anneal. The unprocessed films and devices in process were characterized with Atomic Force Microscopy and Scanning Tunneling Microscopy as well as other common materials characterization techniques. Completed multilayer devices were patterned and packaged for electrical characterization. Relation between material properties and electrical characteristics is discussed

  16. Schottky junction interfacial properties at high temperature: A case of AgNWs embedded metal oxide/p-Si

    Science.gov (United States)

    Mahala, Pramila; Patel, Malkeshkumar; Gupta, Navneet; Kim, Joondong; Lee, Byung Ha

    2018-05-01

    Studying the performance limiting parameters of the Schottky device is an urgent issue, which are addressed herein by thermally stable silver nanowire (AgNW) embedded metal oxide/p-Si Schottky device. Temperature and bias dependent junction interfacial properties of AgNW-ITO/Si Schottky photoelectric device are reported. The current-voltage-temperature (I-V-T), capacitance-voltage-temperature (C-V-T) and impedance analysis have been carried out in the high-temperature region. The ideality factor and barrier height of Schottky junction are assessed using I-V-T characteristics and thermionic emission, to reveal the decrease of ideality factor and increase of barrier height by the increasing of temperature. The extracted values of laterally homogeneous Schottky (ϕb) and ideality factor (n) are approximately 0.73 eV and 1.58, respectively. Series resistance (Rs) assessed using Cheung's method and found that it decreases with the increase of temperature. A linear response of Rs of AgNW-ITO/Si Schottky junction is observed with respect to change in forward bias, i.e. dRS/dV from 0 to 0.7 V is in the range of 36.12-36.43 Ω with a rate of 1.44 Ω/V. Impedance spectroscopy is used to study the effect of bias voltage and temperature on intrinsic Schottky properties which are responsible for photoconversion efficiency. These systematic analyses are useful for the AgNWs-embedding Si solar cells or photoelectrochemical cells.

  17. Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

    Science.gov (United States)

    Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

    2015-09-16

    The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

  18. High quality junctions by interpenetration of vapor liquid solid grown nanostructures for microchip integration

    Energy Technology Data Exchange (ETDEWEB)

    Jebril, Seid; Kuhlmann, Hanna; Adelung, Rainer [Funktionale Nanomaterialien, CAU Kiel (Germany); Mueller, Sven [Nanowires and Thin Films, II. Physikalisches Institut, Goettingen (Germany); Ronning, Carsten [Institute for Solid State Physics, Universitaet Jena (Germany); Kienle, Lorenz [Synthese und Realstruktur, CAU Kiel (Germany); Duppel, Viola [MPI fuer Festkoerperforschung, Stuttgart (Germany)

    2009-07-01

    The usability of nanostructures in electrical devices like gas sensors depends critically on the ability to form high quality contacts and junctions. For the fabrication of various nanostructures, vapor-liquid-solid (VLS) growth is a wide spread and very efficient technique. However, forming contacts with the VLS grown structures to utilize them in a device is still tedious, because either the substrate has to be epitaxial to the VLS material or a manual alignment is necessary. Here we demonstrate the contact formation by simply using the ability of individual crystals to interpenetrate each other during the straight forward VLS growth. This allows growing VLS structures directly on two neighboring gold circuit paths of a microchip; bridges over predefined gaps will be formed. Moreover, TEM investigations confirm the high quality of the crystalline junctions that allow demonstrations as UV and hydrogen-sensor. The VLS devices are compared with conventional produced.

  19. Asymmetry in the normal-metal to high-Tc superconductor tunnel junction

    International Nuclear Information System (INIS)

    Flensberg, K.; Hedegaard, P.; Brix, M.

    1988-01-01

    We show that the observed asymmetry in the I-V characteristics of high-T c material to normal metal junctions can be explained within the Resonating-Valence-Bond model. For a bias current with electrons moving from the superconductor to the normal metal the current is quadratic in the bias voltage, and in the opposite case with electrons moving from the normal metal to the superconductor the current is linear in V. (orig.)

  20. Development of Nb nanoSQUIDs based on SNS junctions for operation in high magnetic fields

    Energy Technology Data Exchange (ETDEWEB)

    Morosh, Viacheslav; Kieler, Oliver; Weimann, Thomas; Zorin, Alexander [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany); Mueller, Benedikt; Martinez-Perez, Maria Jose; Kleiner, Reinhold; Koelle, Dieter [Physikalisches Institut and Center for Quantum Science in LISA+, Universitaet Tuebingen (Germany)

    2016-07-01

    Investigation of the magnetization reversal of single magnetic nanoparticles requires SQUIDs with high spatial resolution, high spin sensitivity (a few Bohr magneton μ{sub B}) and at the same time sufficient stability in high magnetic fields. We fabricated dc nanoSQUIDs comprising overdamped SNS sandwich-type (Nb/HfTi/Nb) Josephson junctions using optimized technology based on combination of electron beam lithography and chemical-mechanical polishing. Our nanoSQUIDs have Josephson junctions with lateral dimensions ≤ 150 nm x 150 nm, effective loop areas < 0.05 μm{sup 2} and the distance between the Josephson junctions ≤ 100 nm. The feeding strip lines of the width ≤ 200 nm have been realized. The nanoSQUIDs have shown stable operation in external magnetic fields at least up to 250 mT. Sufficiently low level of flux noise resulting in spin sensitivity of few tens μ{sub B}/Hz{sup 1/2} has been demonstrated. A further reduction of the nanoSQUID size using our technology is possible.

  1. Light-Responsive Ion-Redistribution-Induced Resistive Switching in Hybrid Perovskite Schottky Junctions

    KAUST Repository

    Guan, Xinwei

    2017-11-23

    Hybrid Perovskites have emerged as a class of highly versatile functional materials with applications in solar cells, photodetectors, transistors, and lasers. Recently, there have also been reports on perovskite-based resistive switching (RS) memories, but there remain open questions regarding device stability and switching mechanism. Here, an RS memory based on a high-quality capacitor structure made of an MAPbBr3 (CH3NH3PbBr3) perovskite layer sandwiched between Au and indium tin oxide (ITO) electrodes is reported. Such perovskite devices exhibit reliable RS with an ON/OFF ratio greater than 103, endurance over 103 cycles, and a retention time of 104 s. The analysis suggests that the RS operation hinges on the migration of charged ions, most likely MA vacancies, which reversibly modifies the perovskite bulk transport and the Schottky barrier at the MAPbBr3/ITO interface. Such perovskite memory devices can also be fabricated on flexible polyethylene terephthalate substrates with high bendability and reliability. Furthermore, it is found that reference devices made of another hybrid perovskite MAPbI3 consistently exhibit filament-type switching behavior. This work elucidates the important role of processing-dependent defects in the charge transport of hybrid perovskites and provides insights on the ion-redistribution-based RS in perovskite memory devices.

  2. Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells

    International Nuclear Information System (INIS)

    Khan, Aurangzeb; Yamaguchi, Masafumi; Dharmaras, Nathaji; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Itoh, Hisayoshi; Ohshima, Takeshi

    2001-01-01

    We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n + -p junction solar cells. An injection anneal activation energy (0.58eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications. (author)

  3. Quasiparticle current in superconductor-semiconductor-superconductor junctions

    International Nuclear Information System (INIS)

    Tartakovskij, A.V.; Fistul', M.V.

    1988-01-01

    It is shown that the quasiparticle current in a superconductor-semiconductor-superconductor junction may significantly increase as a result of resonant passage of the quasiparticle along particular trajectories from periodically situated localized centers. A prediction of the theory is that with increasing junction resistance there should be a change from an excessive current to a insufficient current on the current-voltage characteristics (at high voltages). The effect of transparency of the boundaries on resonance tunneling in such junctions is also investigated

  4. Fabrication of full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x trilayer junctions using a polishing technique

    CERN Document Server

    Kuroda, K; Takami, T; Ozeki, T

    2003-01-01

    We have successfully fabricated full high-T sub c superconducting YBa sub 2 Cu sub 3 O sub 7 sub - sub x (YBCO)/PrBa sub 2 Cu sub 3 O sub 7 sub - sub x (PBCO)/YBCO trilayer junctions, which have a simple device structure, such as a Pb-alloy-based Josephson tunneling junction. It has been demonstrated that a polishing technique is extremely useful in the fabrication process: it is effective in smoothing a coarse surface and gentling the slopes of the edges, or decreasing the slope angles. Owing to the polishing technique, the PBCO barrier layer and the upper YBCO layer have been notably thinned: the thicknesses of these layers are 10 nm and 250 nm, respectively. Junctions with the dimensions of 5 mu m x 5 mu m showed resistively shunted junction-like current-voltage curves with a typical critical current density of 110 A/cm sup 2 at 4.2 K. Furthermore, the operation of superconducting quantum interference devices has been demonstrated. (author)

  5. Negative differential resistance and switch behavior of T-BxNy (x, y = 5, 6, 11) molecular junctions

    Science.gov (United States)

    Wang, Shi-Liang; Yang, Chuan-Lu; Wang, Mei-Shan; Ma, Xiao-Guang; Xin, Jian-Guo

    2017-05-01

    The electronic transport properties of T-BxNy (x, y = 5, 6, 11) molecular junction are investigated based on first-principle density functional theory and non-equilibrium Green's function method. Strong negative differential resistance (NDR) behavior is observed for T-B5N6 molecule under negative and positive bias voltages, with an obvious switch effect for T-B6N5. However, only small NDR is shown for the complex of the two molecules. The projected device density of states, the spatial distribution of molecular orbitals, and the effect of transmission spectra under various bias voltages on the electronic transport properties are analyzed. The obvious effect of bias voltage on the changes in the electronic distribution of frontier molecular orbitals is responsible for the NDR or switch behavior. Therefore, different functional molecular devices can be obtained with different structures of T-BxNy.

  6. Atomistic simulations of highly conductive molecular transport junctions under realistic conditions

    KAUST Repository

    French, William R.; Iacovella, Christopher R.; Rungger, Ivan; Souza, Amaury Melo; Sanvito, Stefano; Cummings, Peter T.

    2013-01-01

    We report state-of-the-art atomistic simulations combined with high-fidelity conductance calculations to probe structure-conductance relationships in Au-benzenedithiolate (BDT)-Au junctions under elongation. Our results demonstrate that large increases in conductance are associated with the formation of monatomic chains (MACs) of Au atoms directly connected to BDT. An analysis of the electronic structure of the simulated junctions reveals that enhancement in the s-like states in Au MACs causes the increases in conductance. Other structures also result in increased conductance but are too short-lived to be detected in experiment, while MACs remain stable for long simulation times. Examinations of thermally evolved junctions with and without MACs show negligible overlap between conductance histograms, indicating that the increase in conductance is related to this unique structural change and not thermal fluctuation. These results, which provide an excellent explanation for a recently observed anomalous experimental result [Bruot et al., Nat. Nanotechnol., 2012, 7, 35-40], should aid in the development of mechanically responsive molecular electronic devices. © 2013 The Royal Society of Chemistry.

  7. Laser processing for bevel termination of high voltage pn junction in SiC

    International Nuclear Information System (INIS)

    Kubiak, A; Ruta, Ł; Rosowski, A; French, P

    2016-01-01

    Proper edge termination of the p-n junction in silicon carbide is a key requirement in the fabrication of discrete devices able to withstand high voltages in reverse polarization. Due to the hardness of SiC the creation of the bevel termination remains difficult using mechanical machining. The use of laser beam sources with medium wavelength (532 nm) gives new possibilities in the machining of the silicon carbide. The paper presents the fabrication of the bevel termination structure in SiC using a green DPSS laser equipped with scanner and dedicated rotating sample holder. Characterization of the resulting structures proves the high potential of the proposed approach. (paper)

  8. Ureteropelvic junction obstruction and ureteral strictures treated by simple high-pressure balloon dilation

    DEFF Research Database (Denmark)

    Osther, P J; Geertsen, U; Nielsen, H V

    1998-01-01

    The long-term results of simple high-pressure balloon dilation in the treatment of ureteropelvic junction obstruction (UPJO) and ureteral strictures were evaluated. A total of 77 consecutive patients were treated: 40 had UPJO and 37 ureteral strictures. The etiology of the obstruction included...... years, success was achieved in only 25% of cases. There were no major complications. It was concluded that simple high-pressure balloon dilation is a safe and reasonably effective technique for the management of most ureteral strictures and congenital UPJO with symptom debut in adult life. Balloon...

  9. High-performance germanium n+/p junction by nickel-induced dopant activation of implanted phosphorus at low temperature

    International Nuclear Information System (INIS)

    Huang Wei; Lu Chao; Yu Jue; Wei Jiang-Bin; Chen Chao-Wen; Wang Jian-Yuan; Xu Jian-Fang; Li Cheng; Chen Song-Yan; Lai Hong-Kai; Wang Chen; Liu Chun-Li

    2016-01-01

    High-performance Ge n + /p junctions were fabricated at a low formation temperature from 325 °C to 400 °C with a metal(nickel)-induced dopant activation technique. The obtained NiGe electroded Ge n + /p junction has a rectification ratio of 5.6× 10 4 and a forward current of 387 A/cm 2 at −1 V bias. The Ni-based metal-induced dopant activation technique is expected to meet the requirement of the shallow junction of Ge MOSFET. (paper)

  10. Generation and detection of high-energy phonons by superconducting junctions

    International Nuclear Information System (INIS)

    Singer, I.L.

    1976-01-01

    Superconducting tunnel junctions are used to investigate the dynamics of energy exchange that takes place in superconductors driven out of equilibrium. In a Sn junction biased at a voltage V much greater than 2Δ(Sn)/e, the tunneling current sustains a continual energy exchange amongst the quasiparticles, phonons, and Cooper pairs. Repeatedly, high-energy quasiparticles decay, emitting phonons; and phonons with energy greater than 2Δ(Sn) break pairs, producing quasiparticles. The phonon-induced component of the current is recovered by synchronously detecting the full tunneling current with respect to a small modulation current in the generator. Sharp onsets observed at intervals of the gap energies require that the escaping phonons are produced by the direct decay of the injected quasiparticles and are not merely the high-energy tail of the thermalized phonons. Both primary and secondary phonons can be abserved distinctly. Theoretical transconductance curves have been computed. The experimental and theoretical curves are in good qualitative agreement. A more detailed comparison suggests that the escape rate of high-energy phonons depends on the energy of the phonons. The dependence of the observed transconductance signal on the temperature and the total junction thickness suggests that the presence of quasiparticles plays a major role in the escape of high-energy phonons. The dependence on temperature can be fitted to exp(b/kT), 0.74 less than b less than 1.05 MeV. It is speculated that the excitation energy is first transported across the superconductor and then carried out of the film by the phonons. It is concluded that high-energy phonons are a sensitive probe of the very reabsorption effects that make their escape so unlikely, and analysis of the detected phonons rich details of the behavior of superconductors removed from equilibrium

  11. Shot noise in YBCO bicrystal Josephson junctions

    DEFF Research Database (Denmark)

    Constantinian, K.Y.; Ovsyannikov, G.A.; Borisenko, I.V.

    2003-01-01

    We measured spectral noise density in YBCO symmetric bicrystal Josephson junctions on sapphire substrates at bias voltages up to 100 mV and T 4.2 K. Normal state resistance of the Josephson junctions, R-N = 20-90 Omega and ICRN up to 2.2 mV have been observed in the experimental samples. Noise...... may explain the experimentally measured linewidth broadening of Josephson oscillations at mm and submm wave frequencies in high-Tc superconducting junctions. Experimental results are discussed in terms of bound states existing at surfaces of d-wave superconducting electrodes....

  12. High temperature resistant cermet and ceramic compositions

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1978-01-01

    Cermet compositions having high temperature oxidation resistance, high hardness and high abrasion and wear resistance, and particularly adapted for production of high temperature resistant cermet insulator bodies are presented. The compositions are comprised of a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Also disclosed are novel ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride.

  13. Josephson junction arrays and superconducting wire networks

    International Nuclear Information System (INIS)

    Lobb, C.J.

    1992-01-01

    Techniques used to fabricate integrated circuits make it possible to construct superconducting networks containing as many as 10 6 wires or Josephson junctions. Such networks undergo phase transitions from resistive high-temperature states to ordered low-resistance low-temperature states. The nature of the phase transition depends strongly on controllable parameters such as the strength of the superconductivity in each wire or junction and the external magnetic field. This paper will review the physics of these phase transitions, starting with the simplest zero-magnetic field case. This leads to a Kosterlitz-Thouless transition when the junctions or wires are weak, and a simple mean-field fransition when the junctions or wires are strong. Rich behavior, resulting from frustration, occurs in the presence of a magnetic field. (orig.)

  14. Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

    International Nuclear Information System (INIS)

    García, I; Rey-Stolle, I; Algora, C

    2012-01-01

    An n ++ -GaAs/p ++ -AlGaAs tunnel junction with a peak current density of 10 100 A cm -2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm -2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

  15. A transimpedance amplifier for excess noise measurements of high junction capacitance avalanche photodiodes

    International Nuclear Information System (INIS)

    Green, James E; David, John P R; Tozer, Richard C

    2012-01-01

    This paper reports a novel and versatile system for measuring excess noise and multiplication in avalanche photodiodes (APDs), using a bipolar junction transistor based transimpedance amplifier front-end and based on phase-sensitive detection, which permits accurate measurement in the presence of a high dark current. The system can reliably measure the excess noise factor of devices with capacitance up to 5 nF. This system has been used to measure thin, large area Si pin APDs and the resulting data are in good agreement with measurements of the same devices obtained from a different noise measurement system which will be reported separately. (paper)

  16. High performance as-grown and annealed high band gap tunnel junctions: Te behavior at the interface

    Energy Technology Data Exchange (ETDEWEB)

    Bedair, S. M., E-mail: bedair@ncsu.edu; Harmon, Jeffrey L.; Carlin, C. Zachary; Hashem Sayed, Islam E.; Colter, P. C. [Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695 (United States)

    2016-05-16

    The performance of n{sup +}-InGaP(Te)/p{sup +}-AlGaAs(C) high band gap tunnel junctions (TJ) is critical for achieving high efficiency in multijunction photovoltaics. Several limitations for as grown and annealed TJ can be attributed to the Te doping of InGaP and its behavior at the junction interface. Te atoms in InGaP tend to get attached at step edges, resulting in a Te memory effect. In this work, we use the peak tunneling current (J{sub pk}) in this TJ as a diagnostic tool to study the behavior of the Te dopant at the TJ interface. Additionally, we used our understanding of Te behavior at the interface, guided by device modeling, to modify the Te source shut-off procedure and the growth rate. These modifications lead to a record performance for both the as-grown (2000 A/cm{sup 2}) and annealed (1000 A/cm{sup 2}) high band gap tunnel junction.

  17. Gap junction intercellular communication mediated by connexin43 in astrocytes is essential for their resistance to oxidative stress.

    Science.gov (United States)

    Le, Hoa T; Sin, Wun Chey; Lozinsky, Shannon; Bechberger, John; Vega, José Luis; Guo, Xu Qiu; Sáez, Juan C; Naus, Christian C

    2014-01-17

    Oxidative stress induced by reactive oxygen species (ROS) is associated with various neurological disorders including aging, neurodegenerative diseases, as well as traumatic and ischemic insults. Astrocytes have an important role in the anti-oxidative defense in the brain. The gap junction protein connexin43 (Cx43) forms intercellular channels as well as hemichannels in astrocytes. In the present study, we investigated the contribution of Cx43 to astrocytic death induced by the ROS hydrogen peroxide (H2O2) and the mechanism by which Cx43 exerts its effects. Lack of Cx43 expression or blockage of Cx43 channels resulted in increased ROS-induced astrocytic death, supporting a cell protective effect of functional Cx43 channels. H2O2 transiently increased hemichannel activity, but reduced gap junction intercellular communication (GJIC). GJIC in wild-type astrocytes recovered after 7 h, but was absent in Cx43 knock-out astrocytes. Blockage of Cx43 hemichannels incompletely inhibited H2O2-induced hemichannel activity, indicating the presence of other hemichannel proteins. Panx1, which is predicted to be a major hemichannel contributor in astrocytes, did not appear to have any cell protective effect from H2O2 insults. Our data suggest that GJIC is important for Cx43-mediated ROS resistance. In contrast to hypoxia/reoxygenation, H2O2 treatment decreased the ratio of the hypophosphorylated isoform to total Cx43 level. Cx43 has been reported to promote astrocytic death induced by hypoxia/reoxygenation. We therefore speculate the increase in Cx43 dephosphorylation may account for the facilitation of astrocytic death. Our findings suggest that the role of Cx43 in response to cellular stress is dependent on the activation of signaling pathways leading to alteration of Cx43 phosphorylation states.

  18. Low-frequency noise in high-(Tc) superconductor Josephson junctions, SQUIDs, and magnetometers

    Science.gov (United States)

    Miklich, A. H.

    1994-05-01

    Design and performance of high-T(sub c) dc superconducting quantum interference devices (SQUID's), junctions that comprise them, and magnetometers made from them are described, with attention to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUID's; this suggests a poorly connected interface at the grain boundary junction. SQUID's from bicrystal junctions have levels of critical current noise controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5 x 10(exp -30) J Hz(exp -1) at 1 Hz is reported. Magnetometers in which a (9 mm)(exp 2) pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz(exp -1/2) down to frequencies below 1 Hz, improving to 39 fT Hz(exp -1/2) at 1 Hz with the addition of a 50mm-diameter single-turn flux transformer. Poor coupling to pickup loop makes it difficult to satisfy competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz(exp -1/2) in the white noise region is reported with a (10 mm)(exp 2) pickup loop. However, additional 1/f noise from processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz(exp -1/2). High-T(sub c) SQUID's exhibit additional 1/f noise when cooled in a nonzero static magnetic field because of additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution of 9.2 pV Hz(exp -1/2) at 10 Hz (24 pV Hz(exp -1/2) at 1 Hz) is described.

  19. Low-Frequency Noise in High-T Superconductor Josephson Junctions, Squids, and Magnetometers.

    Science.gov (United States)

    Miklich, Andrew Hostetler

    The design and performance of high-T_ {rm c} dc superconducting quantum interference devices (SQUIDs), the junctions that comprise them, and magnetometers made from them are described, with special attention paid to sources of 1/f noise. Biepitaxial junctions are found to have large levels of critical current fluctuations which make them unsuitable for low-noise SQUIDs. This noise suggests a poorly connected interface at the grain boundary junction. SQUIDs from bicrystal junctions, in contrast, have levels of critical current noise that are controllable using bias current reversal techniques which leave the noise white down to frequencies of a few Hz. A SQUID with an energy resolution of 1.5times 10^{-30} J Hz^ {-1} at 1 Hz is reported. Magnetometers in which a (9 mm)^2 pickup loop is directly coupled to a SQUID body have achieved field resolutions of 93 fT Hz^{-1/2} down to frequencies below 1 Hz, improving to 39 fT Hz^{-1/2} at 1 Hz with the addition of a 50 mm-diameter single-turn flux transformer. Although the performance of these devices is sufficient for single -channel biomagnetometry or geophysical studies, their relatively poor coupling to the pickup loop makes it difficult to satisfy the competing goals of high field resolution and small detector size necessary for multichannel biomagnetic imaging. Improved coupling is demonstrated by the use of multiturn-input-coil flux transformers, and a resolution of 35 fT Hz^{-1/2} in the white noise region is reported with a (10 mm) ^2 pickup loop. However, additional 1/f noise from the processed multilayer structures in the transformer limits the resolution at 1 Hz to 114 fT Hz^ {-1/2}. High-T_{ rm c} SQUIDs are shown to exhibit additional 1/f noise when they are cooled in a nonzero static magnetic field because of the additional flux vortices trapped in the film, with the noise power at 1 Hz typically increasing by a factor of 10-20 in a field of 0.05 mT (0.5 G). Finally, a SQUID-based voltmeter with a resolution

  20. High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

    Science.gov (United States)

    He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

    2016-12-27

    Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

  1. [Mechanism of the dentino-enamel junction on the resist-crack propagation of human teeth by the finite element method].

    Science.gov (United States)

    Jingjing, Zheng; Tiezhou, Hou; Hong, Tao; Xueyan, Guo; Cui, Wu

    2014-10-01

    This study aims to identify the crack tip stress intensity factor of the propagation process, crack propagation path, and the changes in the shape of the crack tip by the finite element method. The finite element model of dentino-enamel junction was established with ANSYS software, and the length of the initial crack in the single edge was set to 0.1 mm. The lower end of the sample was fixed. The tensile load of 1 MPa with frequency of 5 Hz was applied to the upper end. The stress intensity factor, deflection angle, and changes in the shape of the crack tip in the crack propagation were calculated by ANSYS. The stress intensity factor suddenly and continuously decreased in dentino-enamel junction as the crack extended. A large skewed angle appeared, and the stress on crack tip was reduced. The dentino-enamel junction on human teeth may resist crack propagation through stress reduction.

  2. Observation and Measurement of Negative Differential Resistance on PtSi Schottky Junctions on Porous Silicon

    Directory of Open Access Journals (Sweden)

    Mansor Mohtashamifar

    2010-01-01

    Full Text Available Nanosize porous Si is made by two step controlled etching of Si. The first etching step is carried on the Si surface and the second is performed after deposition of 75 Å of platinum on the formed surface. A platinum silicide structure with a size of less than 25 nm is formed on the porous Si surface, as measured with an Atomic Forced Microscope (AFM. Differential resistance curve as a function of voltage in 77 K and 100 K shows a negative differential resistance and indicates the effect of quantum tunneling. In general form, the ratio of maximum to minimum tunneling current (PVR and the number of peaks in I-V curves reduces by increasing the temperature. However, due to accumulation of carriers behind the potential barrier and superposition of several peaks, it is observed that the PVR increases at 100 K and the maximum PVR at 100 K is 189.6.

  3. Josephson junction between two high Tc superconductors with arbitrary transparency of interface

    Directory of Open Access Journals (Sweden)

    GhR Rashedi

    2010-03-01

    Full Text Available In this paper, a dc Josephson junction between two singlet superconductors (d-wave and s-wave with arbitrary reflection coefficient has been investigated theoretically. For the case of high Tc superconductors, the c-axes are parallel to an interface with finite transparency and their ab-planes have a mis-orientation. The physics of potential barrier will be demonstrated by a transparency coefficient via which the tunneling will occur. We have solved the nonlocal Eilenberger equations and obtained the corresponding and suitable Green functions analytically. Then, using the obtained Green functions, the current-phase diagrams have been calculated. The effect of the potential barrier and mis-orientation on the currents is studied analytically and numerically. It is observed that, the current phase relations are totally different from the case of ideal transparent Josephson junctions between d-wave superconductors and two s-wave superconductors. This apparatus can be used to demonstrate d-wave order parameter in high Tc superconductors.

  4. High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

    Science.gov (United States)

    Ye, Yu; Dai, Yu; Dai, Lun; Shi, Zujin; Liu, Nan; Wang, Fei; Fu, Lei; Peng, Ruomin; Wen, Xiaonan; Chen, Zhijian; Liu, Zhongfan; Qin, Guogang

    2010-12-01

    High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.

  5. Junction and circuit fabrication

    International Nuclear Information System (INIS)

    Jackel, L.D.

    1980-01-01

    Great strides have been made in Josephson junction fabrication in the four years since the first IC SQUID meeting. Advances in lithography have allowed the production of devices with planar dimensions as small as a few hundred angstroms. Improved technology has provided ultra-high sensitivity SQUIDS, high-efficiency low-noise mixers, and complex integrated circuits. This review highlights some of the new fabrication procedures. The review consists of three parts. Part 1 is a short summary of the requirements on junctions for various applications. Part 2 reviews intergrated circuit fabrication, including tunnel junction logic circuits made at IBM and Bell Labs, and microbridge radiation sources made at SUNY at Stony Brook. Part 3 describes new junction fabrication techniques, the major emphasis of this review. This part includes a discussion of small oxide-barrier tunnel junctions, semiconductor barrier junctions, and microbridge junctions. Part 3 concludes by considering very fine lithography and limitations to miniaturization. (orig.)

  6. Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

    Science.gov (United States)

    Fatemi, Navid S.; Sharma, Surya; Buitrago, Oscar; Sharps, Paul R.; Blok, Ron; Kroon, Martin; Jalink, Cees; Harris, Robin; Stella, Paul; Distefano, Sal

    2005-01-01

    NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

  7. AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

    Energy Technology Data Exchange (ETDEWEB)

    SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

    2000-05-16

    Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

  8. An improved PIN photodetector with integrated JFET on high-resistivity silicon

    International Nuclear Information System (INIS)

    Dalla Betta, Gian-Franco; Piemonte, Claudio; Boscardin, Maurizio; Gregori, Paolo; Zorzi, Nicola; Fazzi, Alberto; Pignatel, Giorgio U.

    2006-01-01

    We report on a PIN photodetector integrated with a Junction Field Effect Transistor (JFET) on a high-resistivity silicon substrate. Owing to a modified fabrication technology, the electrical and noise characteristics of the JFET transistor have been enhanced with respect to the previous versions of the device, allowing the performance to be significantly improved. In this paper, the main design and technological aspects relevant to the proposed structure are addressed and experimental results from the electrical characterization are discussed

  9. High temperature oxidation resistant cermet compositions

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1976-01-01

    Cermet compositions are designed to provide high temperature resistant refractory coatings on stainless steel or molybdenum substrates. A ceramic mixture of chromium oxide and aluminum oxide form a coating of chromium oxide as an oxidation barrier around the metal particles, to provide oxidation resistance for the metal particles.

  10. Two coupled Josephson junctions: dc voltage controlled by biharmonic current

    International Nuclear Information System (INIS)

    Machura, L; Spiechowicz, J; Kostur, M; Łuczka, J

    2012-01-01

    We study transport properties of two Josephson junctions coupled by an external shunt resistance. One of the junctions (say, the first) is driven by an unbiased ac current consisting of two harmonics. The device can rectify the ac current yielding a dc voltage across the first junction. For some values of coupling strength, controlled by an external shunt resistance, a dc voltage across the second junction can be generated. By variation of system parameters such as the relative phase or frequency of two harmonics, one can conveniently manipulate both voltages with high efficiency, e.g. changing the dc voltages across the first and second junctions from positive to negative values and vice versa. (paper)

  11. Large-eddy simulation in a mixing tee junction: High-order turbulent statistics analysis

    International Nuclear Information System (INIS)

    Howard, Richard J.A.; Serre, Eric

    2015-01-01

    Highlights: • Mixing and thermal fluctuations in a junction are studied using large eddy simulation. • Adiabatic and conducting steel wall boundaries are tested. • Wall thermal fluctuations are not the same between the flow and the solid. • Solid thermal fluctuations cannot be predicted from the fluid thermal fluctuations. • High-order turbulent statistics show that the turbulent transport term is important. - Abstract: This study analyses the mixing and thermal fluctuations induced in a mixing tee junction with circular cross-sections when cold water flowing in a pipe is joined by hot water from a branch pipe. This configuration is representative of industrial piping systems in which temperature fluctuations in the fluid may cause thermal fatigue damage on the walls. Implicit large-eddy simulations (LES) are performed for equal inflow rates corresponding to a bulk Reynolds number Re = 39,080. Two different thermal boundary conditions are studied for the pipe walls; an insulating adiabatic boundary and a conducting steel wall boundary. The predicted flow structures show a satisfactory agreement with the literature. The velocity and thermal fields (including high-order statistics) are not affected by the heat transfer with the steel walls. However, predicted thermal fluctuations at the boundary are not the same between the flow and the solid, showing that solid thermal fluctuations cannot be predicted by the knowledge of the fluid thermal fluctuations alone. The analysis of high-order turbulent statistics provides a better understanding of the turbulence features. In particular, the budgets of the turbulent kinetic energy and temperature variance allows a comparative analysis of dissipation, production and transport terms. It is found that the turbulent transport term is an important term that acts to balance the production. We therefore use a priori tests to evaluate three different models for the triple correlation

  12. Optimization of superconductor--normal-metal--superconductor Josephson junctions for high critical-current density

    International Nuclear Information System (INIS)

    Golub, A.; Horovitz, B.

    1994-01-01

    The application of superconducting Bi 2 Sr 2 CaCu 2 O 8 and YBa 2 Cu 3 O 7 wires or tapes to electronic devices requires the optimization of the transport properties in Ohmic contacts between the superconductor and the normal metal in the circuit. This paper presents results of tunneling theory in superconductor--normal-metal--superconductor (SNS) junctions, in both pure and dirty limits. We derive expressions for the critical-current density as a function of the normal-metal resistivity in the dirty limit or of the ratio of Fermi velocities and effective masses in the clean limit. In the latter case the critical current increases when the ratio γ of the Fermi velocity in the superconductor to that of the weak link becomes much less than 1 and it also has a local maximum if γ is close to 1. This local maximum is more pronounced if the ratio of effective masses is large. For temperatures well below the critical temperature of the superconductors the model with abrupt pair potential on the SN interfaces is considered and its applicability near the critical temperature is examined

  13. Annealing of ion irradiated high TC Josephson junctions studied by numerical simulations

    International Nuclear Information System (INIS)

    Sirena, M.; Matzen, S.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.; Crete, D. G.

    2009-01-01

    Recently, annealing of ion irradiated high T c Josephson iunctions (JJs) has been studied experimentally in the perspective of improving their reproducibility. Here we present numerical simulations based on random walk and Monte Carlo calculations of the evolution of JJ characteristics such as the transition temperature T c ' and its spread ΔT c ' , and compare them with experimental results on junctions irradiated with 100 and 150 keV oxygen ions, and annealed at low temperatures (below 80 deg. C). We have successfully used a vacancy-interstitial annihilation mechanism to describe the evolution of the T c ' and the homogeneity of a JJ array, analyzing the evolution of the defects density mean value and its distribution width. The annealing first increases the spread in T c ' for short annealing times due to the stochastic nature of the process, but then tends to reduce it for longer times, which is interesting for technological applications

  14. Influence of coupling parameter on current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

    International Nuclear Information System (INIS)

    Shukrinov, Yu.M.; Mahfouzi, F.

    2006-01-01

    We study the current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors by numerical calculations and in framework of capacitively coupled Josephson junctions model we obtain the total number of branches. The influence of the coupling parameter α on the current-voltage characteristics at fixed parameter β (β 2 1/β c , where β c is McCumber parameter) and the influence of α on β-dependence of the current-voltage characteristics are investigated. We obtain the α-dependence of the branch's slopes and branch's endpoints. The presented results show new features of the coupling effect on the scheme of hysteresis jumps in current-voltage characteristics of intrinsic Josephson junctions in high-T c superconductors

  15. Josephson junction arrays

    International Nuclear Information System (INIS)

    Bindslev Hansen, J.; Lindelof, P.E.

    1985-01-01

    In this review we intend to cover recent work involving arrays of Josephson junctions. The work on such arrays falls naturally into three main areas of interest: 1. Technical applications of Josephson junction arrays for high-frequency devices. 2. Experimental studies of 2-D model systems (Kosterlitz-Thouless phase transition, commensurate-incommensurate transition in frustrated (flux) lattices). 3. Investigations of phenomena associated with non-equilibrium superconductivity in and around Josephson junctions (with high current density). (orig./BUD)

  16. Step edge Josephson junctions and high temperature superconducting quantum interference device (SQUID) gradiometers

    International Nuclear Information System (INIS)

    Millar, Alasdair J.

    2002-01-01

    This thesis is concerned with the development of Superconducting Quantum Interference Device (SQUID) gradiometers based on the high temperature superconductor YBa 2 Cu 3 O 7-δ (YBCO). A step-edge Josephson junction fabrication process was developed to produce sufficiently steep (>60 deg) step-edges such that junctions exhibited RSJ-like current-voltage characteristics. The mean I C R N product of a sample of twenty step-edge junctions was 130μV. Step-edge dc SQUIDs with inductances between 67pH and 114pH were fabricated. Generally the SQUIDs had an intrinsic white flux noise in the 10-30μΦ 0 /√Hz range, with the best device, a 70pH SQUID, exhibiting a white flux noise of 5μΦ 0 /√Hz. Different first-order SQUID gradiometer designs were fabricated from single layers of YBCO. Two single-layer gradiometer (SLG) designs were fabricated on 10x10mm 2 substrates. The best balance and lowest gradient sensitivity measured for these devices were 1/300 and 308fT/cm√Hz (at 1 kHz) respectively. The larger baseline and larger flux capture area of the pick-up loops in a large area SLG design, fabricated on 30x10mm 2 substrates, resulted in significant improvements in the balance and gradient field sensitivity with 1/1000 and 50fT/cm√Hz (at 1kHz) measured respectively. To reduce the uniform field effective area of SLOs and therefore reduce the direct pick-up of environmental field noise when operated unshielded, a novel gradiometric SQUID (G-SQUID) device was developed. Fabricated from a single layer of YBCO, the G-SQUIDs with inductances of 67pH, had small uniform field effective areas of approximately 2μm 2 - more than two orders of magnitude smaller than the uniform field effective areas of conventional narrow linewidth SQUIDs of similar inductance. Two designs of G-SQUID were fabricated on 10x10mm 2 substrates. Due to their small effective areas, when cooled unshielded these devices showed no increase in their white flux noise. The best balance achieved for a G

  17. Detailed investigation of the bifurcation diagram of capacitively coupled Josephson junctions in high-Tc superconductors and its self similarity

    Science.gov (United States)

    Hamdipour, Mohammad

    2018-04-01

    We study an array of coupled Josephson junction of superconductor/insulator/superconductor type (SIS junction) as a model for high temperature superconductors with layered structure. In the current-voltage characteristics of this system there is a breakpoint region in which a net electric charge appear on superconducting layers, S-layers, of junctions which motivate us to study the charge dynamics in this region. In this paper first of all we show a current voltage characteristics (CVC) of Intrinsic Josephson Junctions (IJJs) with N=3 Junctions, then we show the breakpoint region in that CVC, then we try to investigate the chaos in this region. We will see that at the end of the breakpoint region, behavior of the system is chaotic and Lyapunov exponent become positive. We also study the route by which the system become chaotic and will see this route is bifurcation. Next goal of this paper is to show the self similarity in the bifurcation diagram of the system and detailed analysis of bifurcation diagram.

  18. RNA Nanoparticles Derived from Three-Way Junction of Phi29 Motor pRNA Are Resistant to I-125 and Cs-131 Radiation

    Science.gov (United States)

    Li, Hui; Rychahou, Piotr G.; Cui, Zheng; Pi, Fengmei; Evers, B. Mark; Shu, Dan

    2015-01-01

    Radiation reagents that specifically target tumors are in high demand for the treatment of cancer. The emerging field of RNA nanotechnology might provide new opportunities for targeted radiation therapy. This study investigates whether chemically modified RNA nanoparticles derived from the packaging RNA (pRNA) three-way junction (3WJ) of phi29 DNA-packaging motor are resistant to potent I-125 and Cs-131 radiation, which is a prerequisite for utilizing these RNA nanoparticles as carriers for targeted radiation therapy. pRNA 3WJ nanoparticles were constructed and characterized, and the stability of these nanoparticles under I-125 and Cs-131 irradiation with clinically relevant doses was examined. RNA nanoparticles derived from the pRNA 3WJ targeted tumors specifically and they were stable under irradiation of I-125 and Cs-131 with clinically relevant doses ranging from 1 to 90 Gy over a significantly long time up to 20 days, while control plasmid DNA was damaged at 20 Gy or higher. PMID:26017686

  19. Fabrication and voltage divider operation of a T flip-flop using high-Tc interface-engineered Josephson junctions

    International Nuclear Information System (INIS)

    Kim, JunHo; Kim, Sang Hyeob; Sung, Gun Yong

    2002-01-01

    We designed and fabricated a rapid-single-flux-quantum T flip-flop (TFF) with high-T c interface-engineered Josephson junctions. Y 1 Ba 2 Cu 3 O 7-d and Sr 2 AlTaO 6 were deposited for the superconducting layer and the insulating layer, respectively. The Josephson junction was formed through an interface treatment process using Ar ion milling and vacuum annealing. We simulated a TFF circuit and designed a physical layout using WRspice and Xic. The fabricated TFF has a minimum junction width of 3 μ m. Through the measurement of the voltage divider operation, the maximum operation frequency was estimated to be 53 GHz at 22 K and 106 GHz at 12 K. (author)

  20. High counting rate resistive-plate chamber

    International Nuclear Information System (INIS)

    Peskov, V.; Anderson, D.F.; Kwan, S.

    1993-05-01

    Parallel-plate avalanche chambers (PPAC) are widely used in physics experiments because they are fast ( 5 counts/mm 2 . A resistive-plate chamber (RPC) is similar to the PPAC in construction except that one or both of the electrodes are made from high resistivity (≥10 10 Ω·cm) materials. In practice RPCs are usually used in the spark mode. Resistive electrodes are charged by sparks, locally reducing the actual electric field in the gap. The size of the charged surface is about 10 mm 2 , leaving the rest of the detector unaffected. Therefore, the rate capability of such detectors in the spark mode is considerably higher than conventional spark counters. Among the different glasses tested the best results were obtained with electron type conductive glasses, which obey Ohm's law. Most of the work with such glasses was done with high pressure parallel-plate chambers (10 atm) for time-of-flight measurements. Resistive glasses have been expensive and produced only in small quantities. Now resistive glasses are commercially available, although they are still expensive in small scale production. From the positive experience of different groups working with the resistive glasses, it was decided to review the old idea to use this glass for the RPC. This work has investigated the possibility of using the RPC at 1 atm and in the avalanche mode. This has several advantages: simplicity of construction, high rate capability, low voltage operation, and the ability to work with non-flammable gases

  1. High Temperature and High Sensitive NOx Gas Sensor with Hetero-Junction Structure using Laser Ablation Method

    Science.gov (United States)

    Gao, Wei; Shi, Liqin; Hasegawa, Yuki; Katsube, Teruaki

    In order to develop a high temperature (200°C˜400°C) and high sensitive NOx gas sensor, we developed a new structure of SiC-based hetero-junction device Pt/SnO2/SiC/Ni, Pt/In2O3/SiC/Ni and Pt/WO3/SiC/Ni using a laser ablation method for the preparation of both metal (Pt) electrode and metal-oxide film. It was found that Pt/In2O3/SiC/Ni sensor shows higher sensitivity to NO2 gas compared with the Pt/SnO2/SiC/Ni and Pt/WO3/SiC/Ni sensor, whereas the Pt/WO3/SiC/Ni sensor had better sensitivity to NO gas. These results suggest that selective detection of NO and NO2 gases may be obtained by choosing different metal oxide films.

  2. Creep resistant high temperature martensitic steel

    Energy Technology Data Exchange (ETDEWEB)

    Hawk, Jeffrey A.; Jablonski, Paul D.; Cowen, Christopher J.

    2017-01-31

    The disclosure provides a creep resistant alloy having an overall composition comprised of iron, chromium, molybdenum, carbon, manganese, silicon, nickel, vanadium, niobium, nitrogen, tungsten, cobalt, tantalum, boron, copper, and potentially additional elements. In an embodiment, the creep resistant alloy has a molybdenum equivalent Mo(eq) from 1.475 to 1.700 wt. % and a quantity (C+N) from 0.145 to 0.205. The overall composition ameliorates sources of microstructural instability such as coarsening of M.sub.23C.sub.6carbides and MX precipitates, and mitigates or eliminates Laves and Z-phase formation. A creep resistant martensitic steel may be fabricated by preparing a melt comprised of the overall composition followed by at least austenizing and tempering. The creep resistant alloy exhibits improved high-temperature creep strength in the temperature environment of around 650.degree. C.

  3. High corrosion-resistant fuel spacers

    International Nuclear Information System (INIS)

    Yoshida, Toshimi; Takase, Iwao; Ikeda, Shinzo; Masaoka, Isao; Nakajima, Junjiro.

    1986-01-01

    Purpose: To enable manufacturing BWR fuel spacers by prior-art production process, using a zirconium-base alloy having very excellent corrosion resistance. Method: A highly improved nodular-resistant, corrosion-resistant zirconium alloy is devised by adding a slight amount of niobium, titanium and vanadium to zircaloy, of which fuel spacers are produced. That is, there can be obtained an alloy having much more excellent nodular resistance than conventional zircaloy, and free from a large change in plasticity, workability, and weldability, by adding to zirconium about 1.5 % of tin, about 0.15 % of iron, about 0.05 % of chromium, about 0.05 % of nickel, and 0.05 to 0.5 % of at least one or two kinds of niobium, titanium and vanadium. Using this zirconium-base alloy can manufacture fuel spacers by the same manufacturing process, thus improving economy and reliability. (Kamimura, M.)

  4. Creep resistant high temperature martensitic steel

    Science.gov (United States)

    Hawk, Jeffrey A.; Jablonski, Paul D.; Cowen, Christopher J.

    2015-11-13

    The disclosure provides a creep resistant alloy having an overall composition comprised of iron, chromium, molybdenum, carbon, manganese, silicon, nickel, vanadium, niobium, nitrogen, tungsten, cobalt, tantalum, boron, and potentially additional elements. In an embodiment, the creep resistant alloy has a molybdenum equivalent Mo(eq) from 1.475 to 1.700 wt. % and a quantity (C+N) from 0.145 to 0.205. The overall composition ameliorates sources of microstructural instability such as coarsening of M.sub.23C.sub.6 carbides and MX precipitates, and mitigates or eliminates Laves and Z-phase formation. A creep resistant martensitic steel may be fabricated by preparing a melt comprised of the overall composition followed by at least austenizing and tempering. The creep resistant alloy exhibits improved high-temperature creep strength in the temperature environment of around 650.degree. C.

  5. Experimental analysis and theoretical model for anomalously high ideality factors in ZnO/diamond p-n junction diode

    International Nuclear Information System (INIS)

    Wang Chengxin; Yang Guowei; Liu Hongwu; Han Yonghao; Luo Jifeng; Gao Chunxiao; Zou Guangtian

    2004-01-01

    High-quality heterojunctions between p-type diamond single-crystalline films and highly oriented n-type ZnO films were fabricated by depositing the p-type diamond single-crystal films on the I o -type diamond single crystal using a hot filament chemical vapor deposition, and later growing a highly oriented n-type ZnO film on the p-type diamond single-crystal film by magnetron sputtering. Interestingly, anomalously high ideality factors (n>>2.0) in the prepared ZnO/diamond p-n junction diode in the interim bias voltage range were measured. For this, detailed electronic characterizations of the fabricated p-n junction were conducted, and a theoretical model was proposed to clarify the much higher ideality factors of the special heterojunction diode

  6. Critical temperatures Tc estimated by Josephson-junction array model of layered high Tc superconductors

    International Nuclear Information System (INIS)

    Kawabata, C.; Shenoy, S.R.; Bishop, A.R.

    1994-11-01

    We model high T c superconductors (HTS) by quantum capacitive Josephson junction arrays (JJA), with Angstrom-scale parameters, to obtain an estimate of Tc trends. The basic idea is as follows. Number (or change) and phase are conjugate variables, with the uncertainty products obeying ΔN · Δ Θ > 1. Thus, in HTS, global phase coherence is opposed by charging-energy induced quantum phase fluctuations, especially across Josephson-coupled CuO 2 planes. These have separation d 1 and effective interplanar dielectric constant ε, e.g. from Y atoms in YBaCuO. Decreasing the interplane charging energy E 0 perpendicular to ∼ d 1 /ε, raises Tc. In Section 1, we motivate a modelling of HTS phase excitations by a quantum capacitive 3D JJA model, with XY planar phases. Section 2 gives a physical picture of the HTS transition, relating the complex layered HTS structure to a simpler ''intermediate level'' quantum 3D JJA/XY model. Section 3 sets up a path integral (3+1)D model that reduces to a previously studied anisotropic 3D XY/JJA model, with constants renormalized in some way, by the capacitance. Postponing a detailed analysis to elsewhere, we make a heuristic estimate for the reduction of the previous Tc, by the charging energy. (author). 30 refs, 8 figs

  7. Supercurrent and multiple Andreev reflections in micrometer-long ballistic graphene Josephson junctions.

    Science.gov (United States)

    Zhu, Mengjian; Ben Shalom, Moshe; Mishchsenko, Artem; Fal'ko, Vladimir; Novoselov, Kostya; Geim, Andre

    2018-02-08

    Ballistic Josephson junctions are predicted to support a number of exotic physics processess, providing an ideal system to inject the supercurrent in the quantum Hall regime. Herein, we demonstrate electrical transport measurements on ballistic superconductor-graphene-superconductor junctions by contacting graphene to niobium with a junction length up to 1.5 μm. Hexagonal boron nitride encapsulation and one-dimensional edge contacts guarantee high-quality graphene Josephson junctions with a mean free path of several micrometers and record-low contact resistance. Transports in normal states including the observation of Fabry-Pérot oscillations and Sharvin resistance conclusively witness the ballistic propagation in the junctions. The critical current density J C is over one order of magnitude larger than that of the previously reported junctions. Away from the charge neutrality point, the I C R N product (I C is the critical current and R N the normal state resistance of junction) is nearly a constant, independent of carrier density n, which agrees well with the theory for ballistic Josephson junctions. Multiple Andreev reflections up to the third order are observed for the first time by measuring the differential resistance in the micrometer-long ballistic graphene Josephson junctions.

  8. Scanning magnetic tunnel junction microscope for high-resolution imaging of remanent magnetization fields

    International Nuclear Information System (INIS)

    Lima, E A; Weiss, B P; Bruno, A C; Carvalho, H R

    2014-01-01

    Scanning magnetic microscopy is a new methodology for mapping magnetic fields with high spatial resolution and field sensitivity. An important goal has been to develop high-performance instruments that do not require cryogenic technology due to its high cost, complexity, and limitation on sensor-to-sample distance. Here we report the development of a low-cost scanning magnetic microscope based on commercial room-temperature magnetic tunnel junction (MTJ) sensors that typically achieves spatial resolution better than 7 µm. By comparing different bias and detection schemes, optimal performance was obtained when biasing the MTJ sensor with a modulated current at 1.0 kHz in a Wheatstone bridge configuration while using a lock-in amplifier in conjunction with a low-noise custom-made preamplifier. A precision horizontal (x–y) scanning stage comprising two coupled nanopositioners controls the position of the sample and a linear actuator adjusts the sensor-to-sample distance. We obtained magnetic field sensitivities better than 150 nT/Hz 1/2 between 0.1 and 10 Hz, which is a critical frequency range for scanning magnetic microscopy. This corresponds to a magnetic moment sensitivity of 10 –14  A m 2 , a factor of 100 better than achievable with typical commercial superconducting moment magnetometers. It also represents an improvement in sensitivity by a factor between 10 and 30 compared to similar scanning MTJ microscopes based on conventional bias-detection schemes. To demonstrate the capabilities of the instrument, two polished thin sections of representative geological samples were scanned along with a synthetic sample containing magnetic microparticles. The instrument is usable for a diversity of applications that require mapping of samples at room temperature to preserve magnetic properties or viability, including paleomagnetism and rock magnetism, nondestructive evaluation of materials, and biological assays. (paper)

  9. Scanning magnetic tunnel junction microscope for high-resolution imaging of remanent magnetization fields

    Science.gov (United States)

    Lima, E. A.; Bruno, A. C.; Carvalho, H. R.; Weiss, B. P.

    2014-10-01

    Scanning magnetic microscopy is a new methodology for mapping magnetic fields with high spatial resolution and field sensitivity. An important goal has been to develop high-performance instruments that do not require cryogenic technology due to its high cost, complexity, and limitation on sensor-to-sample distance. Here we report the development of a low-cost scanning magnetic microscope based on commercial room-temperature magnetic tunnel junction (MTJ) sensors that typically achieves spatial resolution better than 7 µm. By comparing different bias and detection schemes, optimal performance was obtained when biasing the MTJ sensor with a modulated current at 1.0 kHz in a Wheatstone bridge configuration while using a lock-in amplifier in conjunction with a low-noise custom-made preamplifier. A precision horizontal (x-y) scanning stage comprising two coupled nanopositioners controls the position of the sample and a linear actuator adjusts the sensor-to-sample distance. We obtained magnetic field sensitivities better than 150 nT/Hz1/2 between 0.1 and 10 Hz, which is a critical frequency range for scanning magnetic microscopy. This corresponds to a magnetic moment sensitivity of 10-14 A m2, a factor of 100 better than achievable with typical commercial superconducting moment magnetometers. It also represents an improvement in sensitivity by a factor between 10 and 30 compared to similar scanning MTJ microscopes based on conventional bias-detection schemes. To demonstrate the capabilities of the instrument, two polished thin sections of representative geological samples were scanned along with a synthetic sample containing magnetic microparticles. The instrument is usable for a diversity of applications that require mapping of samples at room temperature to preserve magnetic properties or viability, including paleomagnetism and rock magnetism, nondestructive evaluation of materials, and biological assays.

  10. Junction depth measurement using carrier illumination

    International Nuclear Information System (INIS)

    Borden, Peter

    2001-01-01

    Carrier Illumination [trade mark] (CI) is a new method recently developed to meet the need for a non-destructive, high throughput junction depth measurement on patterned wafers. A laser beam creates a quasi-static excess carrier profile in the semiconductor underlying the activated junction. The excess carrier profile is fairly constant below the junction, and drops rapidly in the junction, creating a steep index of refraction gradient at the junction edge. Interference with light reflected from this index gradient provides a signal that is analyzed to determine the junction depth. The paper summarizes evaluation of performance in full NMOS and PMOS process flows, on both bare and patterned wafers. The aims have been to validate (1) performance in the presence of underlying layers typically found at the source/drain (S/D) process steps and (2) measurement on patterned wafers. Correlation of CI measurements to SIMS and transistor drive current are shown. The data were obtained from NMOS structures using As S/D and LDD implants. Correlations to SRP, SIMS and sheet resistance are shown for PMOS structures using B 11 LDD implants. Gage capability measurements are also presented

  11. Metallic behavior and negative differential resistance properties of (InAs)n (n = 2 − 4) molecule cluster junctions via a combined non–equilibrium Green's function and density functional theory study

    International Nuclear Information System (INIS)

    Wang, Qi; Li, Rong; Xu, Yuanlan; Zhang, Jianbing; Miao, Xiangshui; Zhang, Daoli

    2014-01-01

    In this present work, the geometric structures and electronic transport properties of (InAs) n (n = 2, 3, 4) molecule cluster junctions are comparatively investigated using NEGF combined with DFT. Results indicate that all (InAs) n molecule cluster junctions present metallic behavior at the low applied biases ([−2V, 2V]), while NDR appears at a certain high bias range. Our calculation shows that the current of (InAs) 4 molecule cluster–based junction is almost the largest at any bias. The mechanisms of the current–voltage characteristics of all the three molecule cluster junctions are proposed.

  12. Decaffeinated coffee consumption induces expression of tight junction proteins in high fat diet fed rats

    Directory of Open Access Journals (Sweden)

    Mazzone G

    2016-09-01

    Full Text Available Background: Recent evidence indicates that gut microbiota plays a key role in the development of NAFLD through the gut-liver axis. An altered gut permeability induced by alterations of tight junction (TJ proteins allows the passage of bacteria and substances leading to liver inflammation, hepatocyte damage and fibrosis. This study aims to evaluate the influence of decaffeinated coffee on gut permeability in a rat model of fat liver damage induced by a high fat diet (HFD. Methods: Twelve male Wistar rats were assigned to 3 groups. The first group received HFD for 5 months and drank water. The second group received HFD for 5 months and drank water added with 1.2mL decaffeinated coffee/day starting from the 4th month. The third group received standard diet (SD and drank water. Protein and mRNA expression levels of Toll-Like Receptor- 4 (TLR-4, Occludin and Zonula occludens-1 (ZO-1 were assessed in rat intestines. Results: A significant reduction of Occludin and ZO-1 was observed in HFD fed rats (0.97±0.05 vs 0.15±0.08 p˂0.01, and 0.97±0.05 vs 0.57±0.14 p˂0.001 respectively. This reduction was reverted in HFD+COFFEE rats (0.15±0.08 vs 0.83±0.27 p˂0.01 and 0.57±0.14 vs 0.85±0.12 p˂0.01 respectively. The TLR-4 expression up-regulated by HFD was partially reduced by coffee administration. Conclusions: HFD impairs the intestinal TJ barrier integrity. Coffee increases the expression of TJ proteins, reverting the altered gut permeability and reducing TLR-4 expression.

  13. The influence of defects produced by high energy electrons on the electrical characteristics of p-n junctions

    International Nuclear Information System (INIS)

    Koch, L.; Van Dong, N.

    1961-01-01

    The life-time of minority carriers in semi-conductors is very sensitive to the presence of defects introduced by high-energy electrons. The formation of defects thus affects the short-circuiting current and the open circuit voltage of a p-n junction, these being dependent on the life-time. In the work presented, we have bombarded several types of germanium and silicon junctions with 2 MeV electrons from a Van der Graaff, and with β-particles from radioactive sources. The experiments were carried out both at ordinary temperatures and that of liquid air. In this latter case an anomaly in the electron-volt effect was found: the short-circuiting current and the voltage in vacuo, after an initial decrease, increase again and exceed their initial maximum value before once more decreasing. A qualitative interpretation of this abnormal effect is given. (author) [fr

  14. Models of classical one- and two-dimensional Josephson junction arrays and high-T sub c superconductors

    CERN Document Server

    Filatrella, G

    2002-01-01

    The technology to build reproducible and accurately defined structures consisting of many lumped junctions has become available only recently, therefore extended investigations are relatively new. However, beside the interest of such discrete structures per se, it has been suggested soon after the discovery of high-T sub c superconductivity that granular superconductors might be modelled as superconducting islands surrounded by non-superconducting material and weakly coupled to each other. This program has been vigorously carried on, and models of planar Josephson junction arrays (JJAs) have been successfully used to mimic the magnetic behaviour of granular superconductors. The JJA model has been compared to continuous models of non-granular superconductors. We will show how to derive the height of pinning barriers in the JJA model and compare the results with the continuous model. In particular, the existence of current dependent activation energy has been proved to be a key characteristic to understand flux...

  15. Electrical Resistance of Ag-TS-S(CH2)(n-1)CH3//Ga2O3/EGaln Tunneling Junctions

    NARCIS (Netherlands)

    Cademartiri, Ludovico; Thuo, Martin M.; Nijhuis, Christian A.; Reus, William F.; Tricard, Simon; Barber, Jabulani R.; Sodhi, Rana N. S.; Brodersen, Peter; Kim, Choongik; Chiechi, Ryan C.; Whitesides, George M.

    2012-01-01

    Tunneling junctions having the structure Ag-TS-S(CH2)(n-1)CH3//Ga2O3/EGaIn allow physical-organic studies of charge transport across self-assembled monolayers (SAMs). In ambient conditions, the surface of the liquid metal electrode (EGaIn, 75.5 wt % Ga, 24.5 wt % In, mp 15.7 degrees C) oxidizes and

  16. Device-quality tunnel junctions on the high Tc superconductor HgBa2CuO4+δ

    International Nuclear Information System (INIS)

    Zasadzinski, J.; Chen, J.; Romano, P.; Gray, K.E.; Wagner, J.L.; Hinks, D.G.

    1995-01-01

    SIN and SIS tunnel junction devices (e.g. photon detectors, logic elements) require quasiparticle characteristics that exhibit sharp current onsets at the gap voltage and very low sub-gap conductances. Progress is reported on the development of such junctions on High Tc cuprates using mechanical point contacts. In general, these contacts display the optimum characteristics that can be obtained from HTS native-surface tunnel barriers. Most cuprates display a sub-gap conductance which monotonically increases with voltage about the minimum value at zero bias. However, tunneling data of unusually high quality have been obtained for the recently discovered Hg-based cuprate, HgBa 2 CuO 4 (T c =96K). SIS' tunneling data using a Nb tip are presented which exhibit very low and flat sub-gap conductances and sharp conductance peaks as expected from a BCS density of states. These results are slightly improved over earlier published results with SIN junctions. Use of the experimental data to simulate the performance of a quasiparticle mixer demonstrates that noise temperatures approaching the quantum limit are possible for SIS and SIN mixers in the range 1-5 THz

  17. Integrating atomic layer deposition and ultra-high vacuum physical vapor deposition for in situ fabrication of tunnel junctions

    Energy Technology Data Exchange (ETDEWEB)

    Elliot, Alan J., E-mail: alane@ku.edu, E-mail: jwu@ku.edu; Malek, Gary A.; Lu, Rongtao; Han, Siyuan; Wu, Judy Z., E-mail: alane@ku.edu, E-mail: jwu@ku.edu [Department of Physics and Astronomy, The University of Kansas, Lawrence, Kansas 66045 (United States); Yu, Haifeng; Zhao, Shiping [Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)

    2014-07-15

    Atomic Layer Deposition (ALD) is a promising technique for growing ultrathin, pristine dielectrics on metal substrates, which is essential to many electronic devices. Tunnel junctions are an excellent example which require a leak-free, ultrathin dielectric tunnel barrier of typical thickness around 1 nm between two metal electrodes. A challenge in the development of ultrathin dielectric tunnel barriers using ALD is controlling the nucleation of dielectrics on metals with minimal formation of native oxides at the metal surface for high-quality interfaces between the tunnel barrier and metal electrodes. This poses a critical need for integrating ALD with ultra-high vacuum (UHV) physical vapor deposition. In order to address these challenges, a viscous-flow ALD chamber was designed and interfaced to an UHV magnetron sputtering chamber via a load lock. A sample transportation system was implemented for in situ sample transfer between the ALD, load lock, and sputtering chambers. Using this integrated ALD-UHV sputtering system, superconductor-insulator-superconductor (SIS) Nb-Al/Al{sub 2}O{sub 2}/Nb Josephson tunnel junctions were fabricated with tunnel barriers of thickness varied from sub-nm to ∼1 nm. The suitability of using an Al wetting layer for initiation of the ALD Al{sub 2}O{sub 3} tunnel barrier was investigated with ellipsometry, atomic force microscopy, and electrical transport measurements. With optimized processing conditions, leak-free SIS tunnel junctions were obtained, demonstrating the viability of this integrated ALD-UHV sputtering system for the fabrication of tunnel junctions and devices comprised of metal-dielectric-metal multilayers.

  18. Tunneling spectroscopy on grain boundary junctions in electron-doped high-temperature superconductors

    International Nuclear Information System (INIS)

    Welter, B.

    2007-01-01

    Some methods are developed anf presented, by means of which from experimental tunnel spectra, especially on symmetric SIS contacts, informations about the properties of electrodes and tunnel barriers can be obtained. Especially a procedure for the numerical unfolding of symmetric SIS spectra is proposed. Furthermore a series of models is summarized, which can explain the linear background conductivity observed in many spectra on high-temperature superconductors. The results of resistance measurements on film bridges are presented. Especially different methods for the determination of H c2 (T) respectively H c2 (0) are presented and applied to the experimental data. Finally the results of the tunnel-spectroscopy measurements are shown

  19. Site-Selection in Single-Molecule Junction for Highly Reproducible Molecular Electronics.

    Science.gov (United States)

    Kaneko, Satoshi; Murai, Daigo; Marqués-González, Santiago; Nakamura, Hisao; Komoto, Yuki; Fujii, Shintaro; Nishino, Tomoaki; Ikeda, Katsuyoshi; Tsukagoshi, Kazuhito; Kiguchi, Manabu

    2016-02-03

    Adsorption sites of molecules critically determine the electric/photonic properties and the stability of heterogeneous molecule-metal interfaces. Then, selectivity of adsorption site is essential for development of the fields including organic electronics, catalysis, and biology. However, due to current technical limitations, site-selectivity, i.e., precise determination of the molecular adsorption site, remains a major challenge because of difficulty in precise selection of meaningful one among the sites. We have succeeded the single site-selection at a single-molecule junction by performing newly developed hybrid technique: simultaneous characterization of surface enhanced Raman scattering (SERS) and current-voltage (I-V) measurements. The I-V response of 1,4-benzenedithiol junctions reveals the existence of three metastable states arising from different adsorption sites. Notably, correlated SERS measurements show selectivity toward one of the adsorption sites: "bridge sites". This site-selectivity represents an essential step toward the reliable integration of individual molecules on metallic surfaces. Furthermore, the hybrid spectro-electric technique reveals the dependence of the SERS intensity on the strength of the molecule-metal interaction, showing the interdependence between the optical and electronic properties in single-molecule junctions.

  20. Detection of MM.-radiation with high current density submicron niobium-niobium Josephson junctions

    International Nuclear Information System (INIS)

    Daalmans, G.M.; Graauw, T. de; Lidholm, S.; Vliet, F. v.

    1980-01-01

    The rf-induced step heights in submicron niobium-niobium Josephson junctions are in good agreement with Russer theory at 230 and 240 GHz. At 115 and 460 GHz the agreement is less but still reasonably good. The junction noise without rf-bias is within a factor of two equal to the theoretical limit. With rf-bias applied it can be equal to the theoretical limit within a factor of two. The maximum conversion efficiency measured at 230 GHz was 0.18 and the lowest single side band mixer noise temperature at the same frequency was 380 K. Saturation effects are limiting the performance of the mixer. Improvements in eta and Tsub(M) of a factor of two can be expected by eliminating these saturation effects. The mixer which has been studied most extensively starting at 12-3-80 is still alive at 5-6-80 after many cooling cycles, storage at room temperature and soldering in and out of the dewar. The reliability of this type of junction cannot be questionable anymore. (orig.)

  1. Current voltage characteristics of composite superconductors with high contact resistance

    International Nuclear Information System (INIS)

    Akhmetov, A.A.; Baev, V.P.

    1984-01-01

    An experimental study has been made of current-voltage characteristics of composite superconductors with contact resistance between superconducting filaments and normal metal with high electrical conductivity. It is shown that stable resistive states exist in such conductors over a wide range of currents. The presence of resistive states is interpreted in terms of the resistive domain concept. The minimum and maximum currents of resistive states are found to be dependent on the electrical resistance of normal metal and magnetic field. (author)

  2. NbN/AlN/NbN tunnel junctions with high current density up to 54 kA/cm2

    International Nuclear Information System (INIS)

    Wang, Z.; Kawakami, A.; Uzawa, Y.

    1997-01-01

    We report on progress in the development of high current density NbN/AlN/NbN tunnel junctions for applications as submillimeter wave superconductor-insulator-superconductor mixers. A very high current density up to 54 kA/cm 2 , roughly an order of magnitude larger than any reported results for all-NbN tunnel junctions, was achieved in the junctions with about 1 nm thick AlN barriers. The magnetic field and temperature dependence of critical supercurrents were measured to investigate the Josephson tunneling behavior of critical supercurrents in the high-J c junctions. The junctions showed high-quality junction characteristics with a large gap voltage of 5 mV and sharp quasiparticle current rise (ΔV g =0.1 mV). The R sg /R N ratio was about 5 with a V m value of 14 mV measured at 4.2 K. copyright 1997 American Institute of Physics

  3. Physiological and genetics studies of highly radiation-resistant bacteria

    International Nuclear Information System (INIS)

    Keller, L.C.

    1981-01-01

    The phenomenon of radiation resistance was studied using micrococci and Moraxella-Acinetobacter capable of surviving very high doses of gamma radiation which were isolated from foods. Physiological age, or growth phase, was found to be an important factor in making comparisons of radiation-resistance among different bacteria and their mutants. Radiation-resistant bacteria were highly resistant to the lethal effect of nitrosoguanidine used for mutagenesis. Studies of relative resistance of radiation-resistant bacteria, radiation-sensitive mutants, and nonradiation-resistant bacteria to killing by different chemical mutagens did not reveal a correlation between the traits of radiation resistance and mutagen resistance among different strains. Comparisons of plasmid profiles of radiation-resistant bacteria and selected radiation-sensitive mutants suggested the possibility that plasmids may carry genes involved in radiation resistance

  4. Computed tomography image using sub-terahertz waves generated from a high-Tc superconducting intrinsic Josephson junction oscillator

    International Nuclear Information System (INIS)

    Kashiwagi, T.; Minami, H.; Kadowaki, K.; Nakade, K.; Saiwai, Y.; Kitamura, T.; Watanabe, C.; Ishida, K.; Sekimoto, S.; Asanuma, K.; Yasui, T.; Shibano, Y.; Tsujimoto, M.; Yamamoto, T.; Marković, B.; Mirković, J.; Klemm, R. A.

    2014-01-01

    A computed tomography (CT) imaging system using monochromatic sub-terahertz coherent electromagnetic waves generated from a device constructed from the intrinsic Josephson junctions in a single crystalline mesa structure of the high-T c superconductor Bi 2 Sr 2 CaCu 2 O 8+δ was developed and tested on three samples: Standing metallic rods supported by styrofoam, a dried plant (heart pea) containing seeds, and a plastic doll inside an egg shell. The images obtained strongly suggest that this CT imaging system may be useful for a variety of practical applications

  5. Improving the IcRn product and the reproducibility of high Tc Josephson junctions made by ion irradiation

    International Nuclear Information System (INIS)

    Sirena, M.; Fabreges, X.; Bergeal, N.; Lesueur, J.; Faini, G.; Bernard, R.; Briatico, J.

    2007-01-01

    A simple model has been proposed to explain the spread in the characteristics of high T c Josephson junctions made by ion irradiation, assuming that the source of dispersion is the slit's size variation. Accordingly, increasing ion energy should lead to a significant reduction of inhomogeneities. Test samples have been fabricated using two different beam energies. As predicted, the spread in critical current decreases upon increasing energy. Moreover, since the actual width of the barrier is reduced in this case, the I c R n product increases significantly. These results seem promising for future technological applications

  6. High-efficiency p-n junction oxide photoelectrodes for photoelectrochemical water splitting.

    Science.gov (United States)

    Liu, Zhifeng; Yan, Lu

    2016-11-16

    Development of all oxide p-n junctions makes a significant advancement in photoelectrode catalysis functional materials. In this article, we report the preparation of TiO 2 nanorod (NR)/Cu 2 O photoanodes via a simple hydrothermal method followed by an electrochemical deposition process. This facile synthesis route can simultaneously achieve uniform TiO 2 NR/Cu 2 O composite nanostructures and obtain varied amounts of Cu 2 O by controlling the deposition time. The photocurrent density of TiO 2 NR/Cu 2 O heterojunction photoanodes enhanced the photocatalytic activity with a photocurrent density of 5.25 mA cm -2 at 1.23 V versus RHE compared to pristine TiO 2 NR photoanodes under the same conditions. It is demonstrated that the presence of Cu 2 O has played an important role in expanding the spectral response region and reducing the photogenerated charge recombination rate. More importantly, the results provide new insights into the performance of all oxide p-n junctions as photoanodes for PEC water splitting.

  7. Resonance Transport of Graphene Nanoribbon T-Shaped Junctions

    International Nuclear Information System (INIS)

    Xiao-Lan, Kong; Yong-Jian, Xiong

    2010-01-01

    We investigate the transport properties of T-shaped junctions composed of armchair graphene nanoribbons of different widths. Three types of junction geometries are considered. The junction conductance strongly depends on the atomic features of the junction geometry. When the shoulders of the junction have zigzag type edges, sharp conductance resonances usually appear in the low energy region around the Dirac point, and a conductance gap emerges. When the shoulders of the junction have armchair type edges, the conductance resonance behavior is weakened significantly, and the metal-metal-metal junction structures show semimetallic behaviors. The contact resistance also changes notably due to the various interface geometries of the junction

  8. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang

    2012-09-12

    Colloidal quantum dot solids combine convenient solution-processing with quantum size effect tuning, offering avenues to high-efficiency multijunction cells based on a single materials synthesis and processing platform. The highest-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising the benefits of facile quantum tuning. Here we report rectifying junctions constructed entirely using inherently band-aligned quantum-tuned materials. Realizing these quantum junction diodes relied upon the creation of an n-type quantum dot solid having a clean bandgap. We combine stable, chemically compatible, high-performance n-type and p-type materials to create the first quantum junction solar cells. We present a family of photovoltaic devices having widely tuned bandgaps of 0.6-1.6 eV that excel where conventional quantum-to-bulk devices fail to perform. Devices having optimal single-junction bandgaps exhibit certified AM1.5 solar power conversion efficiencies of 5.4%. Control over doping in quantum solids, and the successful integration of these materials to form stable quantum junctions, offers a powerful new degree of freedom to colloidal quantum dot optoelectronics. © 2012 American Chemical Society.

  9. Achievement of high diode sensitivity via spin torque-induced resonant expulsion in vortex magnetic tunnel junction

    Science.gov (United States)

    Tsunegi, Sumito; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Yuasa, Shinji; Kubota, Hitoshi

    2018-05-01

    We investigated the spin-torque diode effect in a magnetic tunnel junction with FeB free layer. Vortex-core expulsion was observed near the boundary between vortex and uniform states. A high diode voltage of 24 mV was obtained with alternative input power of 0.3 µW, corresponding to huge diode sensitivity of 80,000 mV/mW. In the expulsion region, a broad peak in the high frequency region was observed, which is attributed to the weak excitation of uniform magnetization by thermal noise. The high diode sensitivity is of great importance for device applications such as telecommunications, radar detectors, and high-speed magnetic-field sensors.

  10. High temperature chemically resistant polymer concrete

    Science.gov (United States)

    Sugama, T.; Kukacka, L.E.

    High temperature chemically resistant, non-aqueous polymer concrete composites consist of about 12 to 20% by weight of a water-insoluble polymer binder. The binder is polymerized in situ from a liquid vinyl-type monomer or mixture of vinyl containing monomers such as triallylcyanurate, styrene, acrylonitrile, acrylamide, methacrylamide, methyl-methacrylate, trimethylolpropane trimethacrylate and divinyl benzene. About 5 to 40% by weight of a reactive inorganic filler selected from the group consisting of tricalcium silicate and dicalcium silicate and mixtures containing less than 2% free lime, and about 48 to 83% by weight of silica sand/ and a free radical initiator such as di-tert-butyl peroxide, azobisisobutyronitrile, benzoyl peroxide, lauryl peroxide, other orgaic peroxides and combinations to initiate polymerization of the monomer in the presence of the inorganic filers are used.

  11. Improving UV Resistance of High Performance Fibers

    Science.gov (United States)

    Hassanin, Ahmed

    High performance fibers are characterized by their superior properties compared to the traditional textile fibers. High strength fibers have high modules, high strength to weight ratio, high chemical resistance, and usually high temperature resistance. It is used in application where superior properties are needed such as bulletproof vests, ropes and cables, cut resistant products, load tendons for giant scientific balloons, fishing rods, tennis racket strings, parachute cords, adhesives and sealants, protective apparel and tire cords. Unfortunately, Ultraviolet (UV) radiation causes serious degradation to the most of high performance fibers. UV lights, either natural or artificial, cause organic compounds to decompose and degrade, because the energy of the photons of UV light is high enough to break chemical bonds causing chain scission. This work is aiming at achieving maximum protection of high performance fibers using sheathing approaches. The sheaths proposed are of lightweight to maintain the advantage of the high performance fiber that is the high strength to weight ratio. This study involves developing three different types of sheathing. The product of interest that need be protected from UV is braid from PBO. First approach is extruding a sheath from Low Density Polyethylene (LDPE) loaded with different rutile TiO2 % nanoparticles around the braid from the PBO. The results of this approach showed that LDPE sheath loaded with 10% TiO2 by weight achieved the highest protection compare to 0% and 5% TiO2. The protection here is judged by strength loss of PBO. This trend noticed in different weathering environments, where the sheathed samples were exposed to UV-VIS radiations in different weatheromter equipments as well as exposure to high altitude environment using NASA BRDL balloon. The second approach is focusing in developing a protective porous membrane from polyurethane loaded with rutile TiO2 nanoparticles. Membrane from polyurethane loaded with 4

  12. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  13. High amylose resistant starch diet ameliorates oxidative stress, inflammation, and progression of chronic kidney disease.

    Directory of Open Access Journals (Sweden)

    Nosratola D Vaziri

    Full Text Available Inflammation is a major mediator of CKD progression and is partly driven by altered gut microbiome and intestinal barrier disruption, events which are caused by: urea influx in the intestine resulting in dominance of urease-possessing bacteria; disruption of epithelial barrier by urea-derived ammonia leading to endotoxemia and bacterial translocation; and restriction of potassium-rich fruits and vegetables which are common sources of fermentable fiber. Restriction of these foods leads to depletion of bacteria that convert indigestible carbohydrates to short chain fatty acids which are important nutrients for colonocytes and regulatory T lymphocytes. We hypothesized that a high resistant starch diet attenuates CKD progression. Male Sprague Dawley rats were fed a chow containing 0.7% adenine for 2 weeks to induce CKD. Rats were then fed diets supplemented with amylopectin (low-fiber control or high fermentable fiber (amylose maize resistant starch, HAM-RS2 for 3 weeks. CKD rats consuming low fiber diet exhibited reduced creatinine clearance, interstitial fibrosis, inflammation, tubular damage, activation of NFkB, upregulation of pro-inflammatory, pro-oxidant, and pro-fibrotic molecules; impaired Nrf2 activity, down-regulation of antioxidant enzymes, and disruption of colonic epithelial tight junction. The high resistant starch diet significantly attenuated these abnormalities. Thus high resistant starch diet retards CKD progression and attenuates oxidative stress and inflammation in rats. Future studies are needed to explore the impact of HAM-RS2 in CKD patients.

  14. A high-grain diet alters the omasal epithelial structure and expression of tight junction proteins in a goat model.

    Science.gov (United States)

    Liu, Jun-Hua; Xu, Ting-Ting; Zhu, Wei-Yun; Mao, Sheng-Yong

    2014-07-01

    The omasal epithelial barrier plays important roles in maintaining nutrient absorption and immune homeostasis in ruminants. However, little information is currently available about the changes in omasal epithelial barrier function at the structural and molecular levels during feeding of a high-grain (HG) diet. Ten male goats were randomly assigned to two groups, fed either a hay diet (0% grain; n = 5) or HG diet (65% grain; n = 5). Changes in omasal epithelial structure and expression of tight junction (TJ) proteins were determined via electron microscopy and Western blot analysis. After 7 weeks on each diet, omasal contents in the HG group showed significantly lower pH (P diet showed profound alterations in omasal epithelial structure and TJ proteins, corresponding to depression of thickness of total epithelia, stratum granulosum, and the sum of the stratum spinosum and stratum basale, marked epithelial cellular damage, erosion of intercellular junctions and down-regulation in expression of the TJ proteins, claudin-4 and occludin. The study demonstrates that feeding a HG diet is associated with omasal epithelial cellular damage and changes in expression of TJ proteins. These research findings provide an insight into the possible significance of diet on the omasal epithelial barrier in ruminants. Copyright © 2014 Elsevier Ltd. All rights reserved.

  15. NbN-AlN-NbN Josephson junctions on different substrates

    Energy Technology Data Exchange (ETDEWEB)

    Merker, Michael; Bohn, Christian; Voellinger, Marvin; Ilin, Konstantin; Siegel, Michael [KIT, Karlsruhe (Germany)

    2016-07-01

    Josephson junction technology is important for the realization of high quality cryogenic devices such as SQUIDs, RSFQ or SIS-mixers. The material system based on NbN/AlN/NbN tri-layer has gained a lot of interest, because it offers higher gap voltages and critical current densities compared to the well-established Nb/Al-AlOx/Nb technology. However, the realization of high quality Josephson junctions is more challenging. We developed a technology of Josephson junctions on a variety of substrates such as Silicon, Sapphire and Magnesium oxide and compared the quality parameters of these junctions at 4.2 K. The gap voltages achieved a range from 4 mV (for the junctions on Si) to 5.8 mV (in case of MgO substrates) which is considerably higher than those obtained from Nb based Josephson junctions. Another key parameter is the ratio of the subgap resistance to the normal state resistance. This so-called subgap ratio corresponds to the losses in a Josephson junction which have to be minimized. So far, subgap ratios of 26 have been achieved. Further careful optimization of the deposition conditions is required to maximize this ratio, The details of the optimization of technology and of characterization of NbN/AlN/NbN junctions will be presented and discussed.

  16. DLTS spectra of silicon diodes with p+-n-junction irradiated with high energy krypton ions

    Directory of Open Access Journals (Sweden)

    Nikolai A. Poklonski

    2016-06-01

    Full Text Available p+-n-Diodes have been studied. The diodes were manufactured on wafers (thickness 460 μm, (111 plane of uniformly phosphorus doped float-zone-grown single-crystal silicon. The resistivity of silicon was 90 Ω cm and the phosphorus concentration was 5×1013 cm−3. The diodes were irradiated with 250 MeV krypton ions. The irradiation fluence was 108 cm−2. Deep-level transient spectroscopy (DLTS was used to examine the defects induced by high energy krypton ion implantation. The DLTS spectra were recorded at a frequency of 1 MHz in the 78–290 K temperature range. The capacity-voltage characteristics have been measured at a reverse bias voltage from 0 to −19 V at a frequency of 1 MHz. We show that the main irradiation-induced defects are A-centers and divacancies. The behavior of DLTS spectra in the 150–260 K temperature range depends essentially on the emission voltage Ue. The variation of Ue allows us to separate the contributions of different defects into the DLTS spectrum in the 150–260 K temperature range. We show that, in addition to A-centers and divacancies, irradiation produces multivacancy complexes with the energy level Et = Ec−(0.5±0.02 eV and an electron capture cross section of ~4×10–13 cm2.

  17. Parametric interactions in high-Tc superconducting step edge junctions at X-band. [Y-Ba-Cu-O

    Energy Technology Data Exchange (ETDEWEB)

    Kain, A.Z. (TRW Space and Tech. Group, Redondo Beach, CA (United States)); Fetterman, H.R. (Electrical Engineering Dept., Univ. of California at Los Angeles (United States))

    1993-04-20

    We have fabricated and tested both single junctions and series arrays of YBCO step edge junctions for four photon parametric effects at X band as a first step in developing a parametric amplifier at 60 GHz. The series array of 25 junctions at 10.3 Ghz shows a 10 dB increase in reflected signal power as the pump power is increased, while the single junction at 12.2 GHz indicates a 2 dB change. The reflected power at the characteristic idler frequency of 2[omega][sub p]-[omega][sub s] is evidence of true Josephson junction parametric interaction. We are currently investigating the use of thallium based films at 60 GHz which offer a broader range of operating temperatures than does YBCO. Our design for a parametric amplifier at V band is a combination of microstrip based series arrays of junctions and an antipodal finline transition. (orig.)

  18. Gold nanoparticle-mediated (GNOME) laser perforation: a new method for a high-throughput analysis of gap junction intercellular coupling.

    Science.gov (United States)

    Begandt, Daniela; Bader, Almke; Antonopoulos, Georgios C; Schomaker, Markus; Kalies, Stefan; Meyer, Heiko; Ripken, Tammo; Ngezahayo, Anaclet

    2015-10-01

    The present report evaluates the advantages of using the gold nanoparticle-mediated laser perforation (GNOME LP) technique as a computer-controlled cell optoperforation to introduce Lucifer yellow (LY) into cells in order to analyze the gap junction coupling in cell monolayers. To permeabilize GM-7373 endothelial cells grown in a 24 multiwell plate with GNOME LP, a laser beam of 88 μm in diameter was applied in the presence of gold nanoparticles and LY. After 10 min to allow dye uptake and diffusion through gap junctions, we observed a LY-positive cell band of 179 ± 8 μm width. The presence of the gap junction channel blocker carbenoxolone during the optoperforation reduced the LY-positive band to 95 ± 6 μm. Additionally, a forskolin-related enhancement of gap junction coupling, recently found using the scrape loading technique, was also observed using GNOME LP. Further, an automatic cell imaging and a subsequent semi-automatic quantification of the images using a java-based ImageJ-plugin were performed in a high-throughput sequence. Moreover, the GNOME LP was used on cells such as RBE4 rat brain endothelial cells, which cannot be mechanically scraped as well as on three-dimensionally cultivated cells, opening the possibility to implement the GNOME LP technique for analysis of gap junction coupling in tissues. We conclude that the GNOME LP technique allows a high-throughput automated analysis of gap junction coupling in cells. Moreover this non-invasive technique could be used on monolayers that do not support mechanical scraping as well as on cells in tissue allowing an in vivo/ex vivo analysis of gap junction coupling.

  19. High temperature resistant cermet and ceramic compositions. [for thermal resistant insulators and refractory coatings

    Science.gov (United States)

    Phillips, W. M. (Inventor)

    1978-01-01

    High temperature oxidation resistance, high hardness and high abrasion and wear resistance are properties of cermet compositions particularly to provide high temperature resistant refractory coatings on metal substrates, for use as electrical insulation seals for thermionic converters. The compositions comprise a sintered body of particles of a high temperature resistant metal or metal alloy, preferably molybdenum or tungsten particles, dispersed in and bonded to a solid solution formed of aluminum oxide and silicon nitride, and particularly a ternary solid solution formed of a mixture of aluminum oxide, silicon nitride and aluminum nitride. Ceramic compositions comprising a sintered solid solution of aluminum oxide, silicon nitride and aluminum nitride are also described.

  20. Two Algorithms for High-throughput and Multi-parametric Quantification of Drosophila Neuromuscular Junction Morphology.

    Science.gov (United States)

    Castells-Nobau, Anna; Nijhof, Bonnie; Eidhof, Ilse; Wolf, Louis; Scheffer-de Gooyert, Jolanda M; Monedero, Ignacio; Torroja, Laura; van der Laak, Jeroen A W M; Schenck, Annette

    2017-05-03

    Synaptic morphology is tightly related to synaptic efficacy, and in many cases morphological synapse defects ultimately lead to synaptic malfunction. The Drosophila larval neuromuscular junction (NMJ), a well-established model for glutamatergic synapses, has been extensively studied for decades. Identification of mutations causing NMJ morphological defects revealed a repertoire of genes that regulate synapse development and function. Many of these were identified in large-scale studies that focused on qualitative approaches to detect morphological abnormalities of the Drosophila NMJ. A drawback of qualitative analyses is that many subtle players contributing to NMJ morphology likely remain unnoticed. Whereas quantitative analyses are required to detect the subtler morphological differences, such analyses are not yet commonly performed because they are laborious. This protocol describes in detail two image analysis algorithms "Drosophila NMJ Morphometrics" and "Drosophila NMJ Bouton Morphometrics", available as Fiji-compatible macros, for quantitative, accurate and objective morphometric analysis of the Drosophila NMJ. This methodology is developed to analyze NMJ terminals immunolabeled with the commonly used markers Dlg-1 and Brp. Additionally, its wider application to other markers such as Hrp, Csp and Syt is presented in this protocol. The macros are able to assess nine morphological NMJ features: NMJ area, NMJ perimeter, number of boutons, NMJ length, NMJ longest branch length, number of islands, number of branches, number of branching points and number of active zones in the NMJ terminal.

  1. Nonlinear thermoelectric effects in high-field superconductor-ferromagnet tunnel junctions

    Directory of Open Access Journals (Sweden)

    Stefan Kolenda

    2016-11-01

    Full Text Available Background: Thermoelectric effects result from the coupling of charge and heat transport and can be used for thermometry, cooling and harvesting of thermal energy. The microscopic origin of thermoelectric effects is a broken electron–hole symmetry, which is usually quite small in metal structures. In addition, thermoelectric effects decrease towards low temperatures, which usually makes them vanishingly small in metal nanostructures in the sub-Kelvin regime.Results: We report on a combined experimental and theoretical investigation of thermoelectric effects in superconductor/ferromagnet hybrid structures. We investigate the dependence of thermoelectric currents on the thermal excitation, as well as on the presence of a dc bias voltage across the junction.Conclusion: Large thermoelectric effects are observed in superconductor/ferromagnet and superconductor/normal-metal hybrid structures. The spin-independent signals observed under finite voltage bias are shown to be reciprocal to the physics of superconductor/normal-metal microrefrigerators. The spin-dependent thermoelectric signals in the linear regime are due to the coupling of spin and heat transport, and can be used to design more efficient refrigerators.

  2. High-accuracy CFD prediction methods for fluid and structure temperature fluctuations at T-junction for thermal fatigue evaluation

    Energy Technology Data Exchange (ETDEWEB)

    Qian, Shaoxiang, E-mail: qian.shaoxiang@jgc.com [EN Technology Center, Process Technology Division, JGC Corporation, 2-3-1 Minato Mirai, Nishi-ku, Yokohama 220-6001 (Japan); Kanamaru, Shinichiro [EN Technology Center, Process Technology Division, JGC Corporation, 2-3-1 Minato Mirai, Nishi-ku, Yokohama 220-6001 (Japan); Kasahara, Naoto [Nuclear Engineering and Management, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

    2015-07-15

    Highlights: • Numerical methods for accurate prediction of thermal loading were proposed. • Predicted fluid temperature fluctuation (FTF) intensity is close to the experiment. • Predicted structure temperature fluctuation (STF) range is close to the experiment. • Predicted peak frequencies of FTF and STF also agree well with the experiment. • CFD results show the proposed numerical methods are of sufficiently high accuracy. - Abstract: Temperature fluctuations generated by the mixing of hot and cold fluids at a T-junction, which is widely used in nuclear power and process plants, can cause thermal fatigue failure. The conventional methods for evaluating thermal fatigue tend to provide insufficient accuracy, because they were developed based on limited experimental data and a simplified one-dimensional finite element analysis (FEA). CFD/FEA coupling analysis is expected as a useful tool for the more accurate evaluation of thermal fatigue. The present paper aims to verify the accuracy of proposed numerical methods of simulating fluid and structure temperature fluctuations at a T-junction for thermal fatigue evaluation. The dynamic Smagorinsky model (DSM) is used for large eddy simulation (LES) sub-grid scale (SGS) turbulence model, and a hybrid scheme (HS) is adopted for the calculation of convective terms in the governing equations. Also, heat transfer between fluid and structure is calculated directly through thermal conduction by creating a mesh with near wall resolution (NWR) by allocating grid points within the thermal boundary sub-layer. The simulation results show that the distribution of fluid temperature fluctuation intensity and the range of structure temperature fluctuation are remarkably close to the experimental results. Moreover, the peak frequencies of power spectrum density (PSD) of both fluid and structure temperature fluctuations also agree well with the experimental results. Therefore, the numerical methods used in the present paper are

  3. High-resolution scanning near-field EBIC microscopy: Application to the characterisation of a shallow ion implanted p+-n silicon junction

    International Nuclear Information System (INIS)

    Smaali, K.; Faure, J.; El Hdiy, A.; Troyon, M.

    2008-01-01

    High-resolution electron beam induced current (EBIC) analyses were carried out on a shallow ion implanted p + -n silicon junction in a scanning electron microscope (SEM) and a scanning probe microscope (SPM) hybrid system. With this scanning near-field EBIC microscope, a sample can be conventionally imaged by SEM, its local topography investigated by SPM and high-resolution EBIC image simultaneously obtained. It is shown that the EBIC imaging capabilities of this combined instrument allows the study of p-n junctions with a resolution of about 20 nm

  4. The Sine-Gordon model and its applications from pendula and Josephson junctions to gravity and high-energy physics

    CERN Document Server

    Kevrekidis, Panayotis; Williams, Floyd

    2014-01-01

    The sine-Gordon model is a ubiquitous model of Mathematical Physics with a wide range of applications extending from coupled torsion pendula and Josephson junction arrays to gravitational and high-energy physics models. The purpose of this book is to present a summary of recent developments in this field, incorporating both introductory background material, but also with a strong view towards modern applications, recent experiments, developments regarding the existence, stability, dynamics and asymptotics of nonlinear waves that arise in the model. This book is of particular interest to a wide range of researchers in this field, but serves as an introductory text for young researchers and students  interested in the topic. The book consists of well-selected thematic chapters on diverse mathematical and physical aspects of the equation carefully chosen and assigned.

  5. Photo-electrochemical solar cells with a SnO/sub 2/-liquid junction sensitized with highly concentrated dyes

    Energy Technology Data Exchange (ETDEWEB)

    Shimura, Michiko; Shakushiro, Kiyoaki; Shimura, Yukio

    1986-09-01

    The sensitization of a SnO/sub 2/-liquid junction cell with highly concentrated dyes was investigated. The dyes used were Crystal Violet, Methyl Violet B, Malachite Green, Pararosaniline, and Rhodamine B. Anomalous or positive photovoltages were obtained in the system when Fe(CN)/sub 6//sup 3 -/ was added. The performance of the photovoltaic cells showed an open-circuit photovoltage, Vsub(oc), of 175 mV, a short-circuit photocurrent, Isub(sc), of 12 ..mu..A, and a fill factor of 0.42. The action spectra resembled the absorption spectra of the aggregated dyes. A D-D mechanism is introduced to explain the anomaly of the photovoltage of the SnO/sub 2/ electrode sensitized with the dyes. This behaviour is relevant to the practical usage of such photo-electrochemical cells and merits further investigation.

  6. Noise and conversion performance of a high-Tc superconducting Josephson junction mixer at 0.6 THz

    Science.gov (United States)

    Gao, Xiang; Du, Jia; Zhang, Ting; Guo, Yingjie Jay

    2017-11-01

    This letter presents both theoretical and experimental investigations on the noise and conversion performance of a high-Tc superconducting (HTS) step-edge Josephson-junction mixer at the frequency of 0.6 THz and operating temperatures of 20-40 K. Based on the Y-factor and U-factor methods, a double-sideband noise temperature of around 1000 K and a conversion gain of -3.5 dB were experimentally obtained at 20 K. At the temperature of 40 K, the measured mixer noise and conversion efficiency are around 2100 K and -10 dB, respectively. The experimental data are in good agreement with the numerical analysis results using the three-port model. A detailed performance comparison with other reported HTS terahertz mixers has confirmed the superior performance of our presented mixer device.

  7. High density processing electronics for superconducting tunnel junction x-ray detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Warburton, W.K., E-mail: bill@xia.com [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Harris, J.T. [XIA LLC, 31057 Genstar Road, Hayward, CA 94544 (United States); Friedrich, S. [Lawrence Livermore National Laboratory, Livermore, CA 94550 (United States)

    2015-06-01

    Superconducting tunnel junctions (STJs) are excellent soft x-ray (100–2000 eV) detectors, particularly for synchrotron applications, because of their ability to obtain energy resolutions below 10 eV at count rates approaching 10 kcps. In order to achieve useful solid detection angles with these very small detectors, they are typically deployed in large arrays – currently with 100+ elements, but with 1000 elements being contemplated. In this paper we review a 5-year effort to develop compact, computer controlled low-noise processing electronics for STJ detector arrays, focusing on the major issues encountered and our solutions to them. Of particular interest are our preamplifier design, which can set the STJ operating points under computer control and achieve 2.7 eV energy resolution; our low noise power supply, which produces only 2 nV/√Hz noise at the preamplifier's critical cascode node; our digital processing card that digitizes and digitally processes 32 channels; and an STJ I–V curve scanning algorithm that computes noise as a function of offset voltage, allowing an optimum operating point to be easily selected. With 32 preamplifiers laid out on a custom 3U EuroCard, and the 32 channel digital card in a 3U PXI card format, electronics for a 128 channel array occupy only two small chassis, each the size of a National Instruments 5-slot PXI crate, and allow full array control with simple extensions of existing beam line data collection packages.

  8. Highly pressurized partially miscible liquid-liquid flow in a micro-T-junction. I. Experimental observations

    Science.gov (United States)

    Qin, Ning; Wen, John Z.; Ren, Carolyn L.

    2017-04-01

    This is the first part of a two-part study on a partially miscible liquid-liquid flow (liquid carbon dioxide and deionized water) which is highly pressurized and confined in a microfluidic T-junction. Our main focuses are to understand the flow regimes as a result of varying flow conditions and investigate the characteristics of drop flow distinct from coflow, with a capillary number, C ac , that is calculated based on the continuous liquid, ranging from 10-3 to 10-2 (10-4 for coflow). Here in part I, we present our experimental observation of drop formation cycle by tracking drop length, spacing, frequency, and after-generation speed using high-speed video and image analysis. The drop flow is chronologically composed of a stagnating and filling stage, an elongating and squeezing stage, and a truncating stage. The common "necking" time during the elongating and squeezing stage (with C ac˜10-3 ) for the truncation of the dispersed liquid stream is extended, and the truncation point is subsequently shifted downstream from the T-junction corner. This temporal postponement effect modifies the scaling function reported in the literature for droplet formation with two immiscible fluids. Our experimental measurements also demonstrate the drop speed immediately following their generations can be approximated by the mean velocity from averaging the total flow rate over the channel cross section. Further justifications of the quantitative analysis by considering the mass transfer at the interface of the two partially miscible fluids are provided in part II.

  9. Corrosion resistance of high-performance materials titanium, tantalum, zirconium

    CERN Document Server

    2012-01-01

    Corrosion resistance is the property of a material to resist corrosion attack in a particular aggressive environment. Although titanium, tantalum and zirconium are not noble metals, they are the best choice whenever high corrosion resistance is required. The exceptionally good corrosion resistance of these high–performance metals and their alloys results from the formation of a very stable, dense, highly adherent, and self–healing protective oxide film on the metal surface. This naturally occurring oxide layer prevents chemical attack of the underlying metal surface. This behavior also means, however, that high corrosion resistance can be expected only under neutral or oxidizing conditions. Under reducing conditions, a lower resistance must be reckoned with. Only very few inorganic and organic substances are able to attack titanium, tantalum or zirconium at ambient temperature. As the extraordinary corrosion resistance is coupled with an excellent formability and weldability these materials are very valua...

  10. Magmatic tectonic effects of high thermal regime at the site of active ridge subduction: the Chile Triple Junction model

    Science.gov (United States)

    Lagabrielle, Yves; Guivel, Christèle; Maury, René C.; Bourgois, Jacques; Fourcade, Serge; Martin, Hervé

    2000-11-01

    High thermal gradients are expected to be found at sites of subduction of very young oceanic lithosphere and more particularly at ridge-trench-trench (RTT) triple junctions, where active oceanic spreading ridges enter a subduction zone. Active tectonics, associated with the emplacement of two main types of volcanic products, (1) MORB-type magmas, and (2) calc-alkaline acidic magmas in the forearc, also characterize these plate junction domains. In this context, MORB-type magmas are generally thought to derive from the buried active spreading center subducted at shallow depths, whereas the origin of calc-alkaline acidic magmas is more problematic. One of the best constrained examples of ridge-trench interaction is the Chile Triple Junction (CTJ) located southwest of the South American plate at 46°12'S, where the active Chile spreading center enters the subduction zone. In this area, there is a clear correlation between the emplacement of magmatic products and the migration of the triple junction along the active margin. The CTJ lava population is bimodal, with mafic to intermediate lavas (48-56% SiO 2) and acidic lavas ranging from dacites to rhyolites (66-73% SiO 2). Previous models have shown that partial melting of oceanic crust plus 10-20% of sediments, leaving an amphibole- and plagioclase-rich residue, is the only process that may account for the genesis of acidic magmas. Due to special plate geometry in the CTJ area, a given section of the margin may be successively affected by the passage of several ridge segments. We emphasize that repeated passages will lead to the development of very high thermal gradients allowing melting of rocks of oceanic origin at temperatures of 800-900°C and low pressures, corresponding to depths of 10-20 km depth only. In addition, the structure of the CTJ forearc domain is dominated by horizontal displacements and tilting of crustal blocks along a network of strike-slip faults. The occurrence of such a deformed domain implies

  11. Protective Effect of 1,25-Dihydroxy Vitamin D3 on Pepsin-Trypsin-Resistant Gliadin-Induced Tight Junction Injuries.

    Science.gov (United States)

    Dong, Shouquan; Singh, Tikka Prabhjot; Wei, Xin; Yao, Huang; Wang, Hongling

    2018-01-01

    Tight junction (TJ) injuries induced by pepsin-trypsin-resistant gliadin (PT-G) play an important role in the pathogenesis of celiac disease. Previously, 1,25-dihydroxy vitamin D3 (VD3) was reported to be a TJ regulator that attenuates lipopolysaccharide- and alcohol-induced TJ injuries. However, whether VD3 can attenuate PT-G-induced TJ injuries is unknown. The aim of this study was to evaluate the effects of VD3 on PT-G-induced TJ injuries. Caco-2 monolayers were used as in vitro models. After being cultured for 21 days, the monolayers were treated with PT-G plus different concentrations of VD3. Then, the changes in trans-epithelial electrical resistance and FITC-dextran 4000 (FD-4) flux were determined to evaluate the monolayer barrier function. TJ protein levels were measured to assess TJ injury severity, and myeloid differentiation factor 88 (MyD88) expression and zonulin release levels were determined to estimate zonulin release signaling pathway activity. Additionally, a gluten-sensitized mouse model was established as an in vivo model. After the mice were treated with VD3 for 7 days, we measured serum FD-4 concentrations, TJ protein levels, MyD88 expression, and zonulin release levels to confirm the effect of VD3. Both in vitro and in vivo, VD3 significantly attenuated the TJ injury-related increase in intestinal mucosa barrier permeability. Moreover, VD3 treatment up-regulated TJ protein expression levels and significantly decreased MyD88 expression and zonulin release levels. VD3 has protective effects against PT-G-induced TJ injuries both in vitro and in vivo, which may correlate with the disturbance of the MyD88-dependent zonulin release signaling pathway.

  12. Tunable Nitride Josephson Junctions.

    Energy Technology Data Exchange (ETDEWEB)

    Missert, Nancy A. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Henry, Michael David [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Lewis, Rupert M. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen W. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolfley, Steven L. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Brunke, Lyle Brent [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wolak, Matthaeus [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    We have developed an ambient temperature, SiO2/Si wafer - scale process for Josephson junctions based on Nb electrodes and Ta x N barriers with tunable electronic properties. The films are fabricated by magnetron sputtering. The electronic properties of the TaxN barriers are controlled by adjusting the nitrogen flow during sputtering. This technology offers a scalable alternative to the more traditional junctions based on AlOx barriers for low - power, high - performance computing.

  13. The nonideality coefficient of current-voltage characteristics for p-n junctions in a high ultrahigh-frequency (microwave) field

    International Nuclear Information System (INIS)

    Shamirzaev, S. H.; Gulyamov, G.; Dadamirzaev, M. G.; Gulyamov, A. G.

    2009-01-01

    The effect of heating of electrons and holes on the nonideality coefficient of the current-voltage characteristic for a p-n junction in a high microwave field is studied. It is established that the nonideality coefficient for a diode depends on the type of charge carriers that make the major contribution to the current in the p-n junction. It is shown that, in some cases in silicon samples, the nonideality coefficient for the diode is governed by the temperature for holes in spite of the fact that the temperature for electrons is higher than the temperature for holes.

  14. International comparison. High-precision comparison of voltages generated by SINIS and SIS Josephson junction arrays at the 10 mV level

    Energy Technology Data Exchange (ETDEWEB)

    Karpov, O.V.; Koutovoi, V.D.; Sherstobitov, S.V. [Institute for Physical-Technical and Radiotechnical Measurements, VNIIFTRI, Gostandart of Russia, Mendeleevo, Moscow Region (Russian Federation); Niemeyer, J. [Physikalisch-Technische Bundesanstalt, PTB, Braunschweig (Germany)

    2001-07-01

    A high-precision comparison of dc voltages generated by a 10 GHz SINIS (superconductor/insulator/normal/insulator/superconductor) Josephson non-hysteretic junction array and a 70 GHz SIS (superconductor/insulator/superconductor) Josephson junction array is described. The paper also describes a method of minimizing the Type A measurement uncertainty. The measurements were carried out at the 10 mV level. The agreement between both output voltages was determined to 0.2 nV with a Type A uncertainty of 0.5 nV. (authors)

  15. Niobium tunnel junction fabrication using e-gun evaporation and SNAP

    Science.gov (United States)

    Kortlandt, J.; van der Zant, H. S. J.; Schellingerhout, A. J. G.; Mooij, J. E.

    1990-11-01

    We have fabricated high quality small area Nb-Al-Al 2O 3-Nb junctions with SNAP, making use of e-beam evaporation in a 10 -5 Pa diffusion pumped vacuum system. Nominal dimensions of the junctions are 8x8, 4x4 and 2x2 μm 2. We obtain typical current densities of 5-6 × 10 +2A/cm 2 and (critical current) x (subgap resistance) products of 40 mV.

  16. Studies of chaos and thermal noise in a driven Josephson junction using an electronic analog

    International Nuclear Information System (INIS)

    Pegrum, C.M.; Gurney, W.S.C.; Nisbet, R.M.

    1989-01-01

    Using an electronic analog of a resistively shunted driven Josephson junction, the authors have demonstrated a number of effects, including the appearance of a devil's staircase in the current-voltage characteristic, the onset of chaos, and the effect of noise on these phenomena. The authors stress that the analog is simple, but models the junction behavior with a high degree of accuracy and detail

  17. High temperature resistant nanofiber by bubbfil-spinning

    Directory of Open Access Journals (Sweden)

    Li Ya

    2015-01-01

    Full Text Available Heat-resisting nanofibers have many potential applications in various industries, and the bubbfil spinning is the best candidate for mass-production of such materials. Polyether sulfone/zirconia solution with a bi-solvent system is used in the experiment. Experimental result reveals that polyether sulfone/zirconia nanofibers have higher resistance to high temperature than pure polyether sulfone fibers, and can be used as high-temperature-resistant filtration materials.

  18. Hysteresis development in superconducting Josephson junctions

    International Nuclear Information System (INIS)

    Refai, T.F.; Shehata, L.N.

    1988-09-01

    The resistively and capacitive shunted junction model is used to investigate hysteresis development in superconducting Josephson junctions. Two empirical formulas that relate the hysteresis width and the quasi-particle diffusion length in terms of the junctions electrical parameters, temperature and frequency are obtained. The obtained formulas provide a simple tool to investigate the full potentials of the hysteresis phenomena. (author). 9 refs, 3 figs

  19. Experimental Evaluation of IGBT Junction Temperature Measurement via a Modified-VCE (ΔVCE_ΔVGE) Method with Series Resistance Removal

    DEFF Research Database (Denmark)

    Baker, Nick; Iannuzzo, Francesco; Munk-Nielsen, Stig

    2016-01-01

    Temperature sensitive electrical parameters (TSEPs) allow junction temperature measurements on power semiconductors without modification to module packaging. The on-state collector-emitter voltage (VCE) in IGBTs is an attractive option for junction temperature measurement since it is relatively e...

  20. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  1. Junction detection and pathway selection

    Science.gov (United States)

    Peck, Alex N.; Lim, Willie Y.; Breul, Harry T.

    1992-02-01

    The ability to detect junctions and make choices among the possible pathways is important for autonomous navigation. In our script-based navigation approach where a journey is specified as a script of high-level instructions, actions are frequently referenced to junctions, e.g., `turn left at the intersection.' In order for the robot to carry out these kind of instructions, it must be able (1) to detect an intersection (i.e., an intersection of pathways), (2) know that there are several possible pathways it can take, and (3) pick the pathway consistent with the high level instruction. In this paper we describe our implementation of the ability to detect junctions in an indoor environment, such as corners, T-junctions and intersections, using sonar. Our approach uses a combination of partial scan of the local environment and recognition of sonar signatures of certain features of the junctions. In the case where the environment is known, we use additional sensor information (such as compass bearings) to help recognize the specific junction. In general, once a junction is detected and its type known, the number of possible pathways can be deduced and the correct pathway selected. Then the appropriate behavior for negotiating the junction is activated.

  2. Dynamics of Josephson junction arrays

    International Nuclear Information System (INIS)

    Hadley, P.

    1989-01-01

    The dynamics of Josephson junction arrays is a topic that lies at the intersection of the fields of nonlinear dynamics and Josephson junction technology. The series arrays considered here consist of several rapidly oscillating Josephson junctions where each junction is coupled equally to every other junction. The purpose of this study is to understand phaselocking and other cooperative dynamics of this system. Previously, little was known about high dimensional nonlinear systems of this sort. Numerical simulations are used to study the dynamics of these arrays. Three distinct types of periodic solutions to the array equations were observed as well as period doubled and chaotic solutions. One of the periodic solutions is the symmetric, in-phase solution where all of the junctions oscillate identically. The other two periodic solutions are symmetry-broken solutions where all of the junction do not oscillate identically. The symmetry-broken solutions are highly degenerate. As many as (N - 1) stable solutions can coexist for an array of N junctions. Understanding the stability of these several solutions and the transitions among them is vital to the design of useful devices

  3. Dynamics of pi-junction interferometer circuits

    DEFF Research Database (Denmark)

    Kornkev, V.K.; Mozhaev, P.B.; Borisenko, I.V.

    2002-01-01

    The pi-junction superconducting circuit dynamics was studied by means of numerical simulation technique. Parallel arrays consisting of Josephson junctions of both 0- and pi-type were studied as a model of high-T-c grain-boundary Josephson junction. The array dynamics and the critical current depe...

  4. Mechanism of high-temperature resistant water-base mud

    Energy Technology Data Exchange (ETDEWEB)

    Luo, P

    1981-01-01

    Based on experiments, the causes and laws governing the changes in the performance of water-base mud under high temperature are analyzed, and the requisites and mechanism of treating agents resisting high temperature are discussed. Ways and means are sought for inhibiting, delaying and making use of the effect of high temperature on the performance of mud, while new ideas and systematic views have been expressed on the preparation of treating agents and set-up of a high temperature resistant water-base mud system. High temperature dispersion and high temperature surface inactivation of clay in the mud, as well as their effect and method of utilization are reviewed. Subjects also touched upon include degradation and cross-linking of the high-temperature resistant treating agents, their use and effect. Based on the above, the preparation of a water-base and system capable of resisting 180 to 250/sup 0/C is recommended.

  5. Oxidation resistant high creep strength austenitic stainless steel

    Science.gov (United States)

    Brady, Michael P.; Pint, Bruce A.; Liu, Chain-Tsuan; Maziasz, Philip J.; Yamamoto, Yukinori; Lu, Zhao P.

    2010-06-29

    An austenitic stainless steel displaying high temperature oxidation and creep resistance has a composition that includes in weight percent 15 to 21 Ni, 10 to 15 Cr, 2 to 3.5 Al, 0.1 to 1 Nb, and 0.05 to 0.15 C, and that is free of or has very low levels of N, Ti and V. The alloy forms an external continuous alumina protective scale to provide a high oxidation resistance at temperatures of 700 to 800.degree. C. and forms NbC nanocarbides and a stable essentially single phase fcc austenitic matrix microstructure to give high strength and high creep resistance at these temperatures.

  6. Thermal mixing in T-junction piping system concerned with high-cycle thermal fatigue in structure

    International Nuclear Information System (INIS)

    Tanaka, Masaaki; Ohshima, Hiroyuki; Monji, Hideaki

    2008-01-01

    In Japan Atomic Energy Agency (JAEA), a numerical simulation code 'MUGTHES' has been developed to investigate thermal striping phenomena caused by turbulence mixing of fluids in different temperature and to provide transient data for an evaluation method of high-cycle thermal fatigue. MUGTHES adopts Large Eddy Simulation (LES) approach to predict unsteady phenomena in thermal mixing and employs boundary fitted coordinate system to be applied to complex geometry in a power reactor. Numerical simulation of thermal striping phenomena in a T-junction piping system (T-pipe) is conducted. Boundary condition for the simulation is chosen from an existing water experiment in JAEA, named as WATLON experiment. In the numerical simulation, standard Smagorinsky model is employed as eddy viscosity model with the model coefficient of 0.14 (=Cs). Numerical results of MUGTHES are verified by the comparisons with experimental results of velocity and temperature. Through the numerical simulation in the T-pipe, applicability of MUGTHES to the thermal striping phenomena is confirmed and the characteristic large-scale eddy structure which dominates thermal mixing and may cause high-cycle thermal fatigue is revealed. (author)

  7. Study on the Thermal Resistance of Multi-chip Module High Power LED Packaging Heat Dissipation System

    Directory of Open Access Journals (Sweden)

    Kailin Pan

    2014-10-01

    Full Text Available Thermal resistance is a key technical index which indicates the thermal management of multi-chip module high power LED (MCM-LED packaging heat dissipation system. In this paper, the prototype structure of MCM-LED packaging heat dissipation system is proposed to study the reliable thermal resistance calculation method. In order to analyze the total thermal resistance of the MCM-LED packaging heat dissipation system, three kinds of thermal resistance calculation method including theoretical calculation, experimental testing and finite element simulation are developed respectively. Firstly, based on the thermal resistance network model and the principle of steady state heat transfer, the theoretical value of total thermal resistance is 6.111 K/W through sum of the thermal resistance of every material layer in the major direction of heat flow. Secondly, the thermal resistance experiment is carried out by T3Ster to obtain the experimental result of total thermal resistance, and the value is 6.729 K/W. Thirdly, a three-dimensional finite element model of MCM-LED packaging heat dissipation system is established, and the junction temperature experiment is also performed to calculated the finite element simulated result of total thermal resistance, the value is 6.99 K/W. Finally, by comparing the error of all the three kinds of result, the error of total thermal resistance between the theoretical value and experimental result is 9.2 %, and the error of total thermal resistance between the experimental result and finite element simulation is only about -3.9 %, meanwhile, the main reason of each error is discussed respectively.

  8. Nonlinearity in superconductivity and Josephson junctions

    International Nuclear Information System (INIS)

    Lazarides, N.

    1995-01-01

    Within the framework of the Bardeen, Cooper and Schrieffers (BCS) theory, the influence of anisotropy on superconducting states are investigated. Crystal anisotropy exists in un-conventional low temperature superconductors as e.g. U 1-x Th x Be 13 and in high temperature superconductors. Starting from a phenomenological pairing interaction of the electrons or holes, the BCS approach is used to derive a set of coupled nonlinear algebraic equations for the momentum dependent gap parameter. The emphasis is put on bifurcation phenomena between s-, d-wave and mixed s- and d-wave symmetry and the influence on measurable quantities as the electron specific heat, spin susceptibility and Josephson tunnelling. Pitch-fork and perturbed pitch-fork bifurcations have been found separating s- and d-wave superconducting states from mixed s- and d-wave states. The additional superconducting states give rise to jumps in the electron specific heat below the transition temperature. These jumps are rounded in the case of perturbed pitch-fork bifurcations. An experiment to measure the sign of the interlayer interaction using dc SQUIDS is suggested. The Ambegaokar-Baratoff formalism has been used for calculating the quasiparticle current and the two phase coherent tunnelling currents in a Josephson junction made of anisotropic superconductors. It is shown that anisotropy can lead to a reduction in the product of the normal resistance and the critical current. For low voltages across the junction the usual resistively shunted Josephson model can be used. Finally, bunching in long circular Josephson junctions and suppression of chaos in point junctions have been investigated. (au) 113 refs

  9. Humidity dependence of molecular tunnel junctions with an AlOx/COOH- interface

    Science.gov (United States)

    Zhang, Xiaohang; McGill, Stephen; Xiong, Peng

    2006-03-01

    We have studied the electron transport in planar tunneling junctions with aluminum oxide and an organic self-assembled monolayer (SAM) as the tunnel barrier. The structure of the junctions is Al/AlOx/SAM/(Au, Pb) with a junction area of ˜ 0.4mm^2. The organic molecules investigated include mercaptohexadecanoic acid (MHA), hexadecanoic acid (HDA), and octadecyltrichlorosilane (OTS); all of which form ordered SAMs on top of aluminum oxide. The use of a superconducting electrode (Al) enables us to determine unambiguously that these are high-quality tunnel junctions. For junctions incorporating MHA, the transport behavior is found to be strongly humidity dependent. The resistance of these junctions drops more than 50% when placed in dry nitrogen and recovers when returned into the ambient. The same drop also occurs when the sample is placed into a vacuum, and backfilling the vacuum with either dry N2 or O2 has negligible effect on the resistance. For comparison, junctions with HDA show the same humidity dependence, while OTS samples do not. Since both MHA and HDA have carboxylic groups and OTS does not, the results suggest that water molecules at the AlOx/COOH- interface play the central role in the observed behavior. Inelastic tunneling spectroscopy (IETS) has also been performed to understand the role of water. This work was supported by a FSU Research Foundation PEG grant.

  10. Predicting Factors for High-Grade Cervical Dysplasia in Women With Low-Grade Cervical Cytology and Nonvisible Squamocolumnar Junction.

    Science.gov (United States)

    Bogani, Giorgio; Taverna, Francesca; Lombardo, Claudia; Ditto, Antonino; Martinelli, Fabio; Signorelli, Mauro; Chiappa, Valentina; Leone Roberti Maggiore, U; Mosca, Lavinia; Sabatucci, Ilaria; Scaffa, Cono; Lorusso, Domenica; Raspagliesi, Francesco

    2018-01-01

    To assess the risk of developing high-grade cervical dysplasia among women with low-grade cervical cytology and nonvisible squamocolumnar junction (SCJ) at colposcopic examination. Data of consecutive women with low-grade intraepithelial lesion(≤LSIL) undergoing colposcopic examination, which was unsatisfactory (due to the lack of the visualization of the entire SCJ), were retrospectively reviewed. The risk of developing high-grade cervical intraepithelial neoplasia (CIN2+) was assessed using Kaplan-Meier and Cox models. Data of 86 women were retrieved. Mean (standard deviation [SD]) age was 36.3 (13.4) years. A total of 71 (82.5%) patients had high-risk human papillomavirus (HR-HPV) at the time of diagnosis. Among the 63 patients undergoing repetition of HPV testing, 15 (24%) and 48 (76%) women had positive and negative tests for HR-HPV at 12 months, respectively. We observed that 5 (33%) of 15 patients with HPV persistence developed CIN2+, while only 1 (2%) patient of 48 patients without HPV persistence developed CIN2+ (odds ratio [OR]: 23.5; 95% confidence interval [CI]: 2.46-223.7; P < .001). The length of HR-HPV persistence correlated with an increased risk of developing CIN2+ ( P < .001; P for trend). High-risk HPV persistence is the only factor predicting for CIN2+ (hazard ratio: 3.19; 95% CI: 1.55-6.57; P = .002). High-risk HPV persistence predicts the risk of developing CIN2+ in patients with unsatisfactory colposcopic examination. Further studies are warranted in order to implement the use of HPV testing in patients with unsatisfactory colposcopy.

  11. High resolution resistivity measurements at the Down Ampney research site

    International Nuclear Information System (INIS)

    Hallam, J.R.; Jackson, P.D.; Rainsbury, M.; Raines, M.

    1991-01-01

    A new high resolution resistivity surveying method is described for fault detection and characterisation. The resolution is shown to be significantly higher than conventional apparent resistivity profiling when applied to geological discontinuities such as faults. Nominal fault locations have been determined to an accuracy of 0.5 m, as proven by drilling. Two dimensional profiling and image enhancement of the resulting 2-D data set indicated the possibility of subsidiary fractures and/or lateral changes within the clay to clay' fault zone. The increased resolution allows greater confidence to be placed on both the fault detection and lateral perturbations derived from processed resistance and resistivity images. (Author)

  12. Optical photon detection in Al superconducting tunnel junctions

    International Nuclear Information System (INIS)

    Brammertz, G.; Peacock, A.; Verhoeve, P.; Martin, D.; Venn, R.

    2004-01-01

    We report on the successful fabrication of low leakage aluminium superconducting tunnel junctions with very homogeneous and transparent insulating barriers. The junctions were tested in an adiabatic demagnetisation refrigerator with a base temperature of 35 mK. The normal resistance of the junctions is equal to ∼7 μΩ cm 2 with leakage currents in the bias voltage domain as low as 100 fA/μm 2 . Optical single photon counting experiments show a very high responsivity with charge amplification factors in excess of 100. The total resolving power λ/Δλ (including electronic noise) for 500 nm photons is equal to 13 compared to a theoretical tunnel limited value of 34. The current devices are found to be limited spectroscopically by spatial inhomogeneities in the detectors response

  13. Transparency of atom-sized superconducting junctions

    International Nuclear Information System (INIS)

    Van-der-Post, N.; Peters, E.T.; Van Ruitenbeek, J.M.; Yanson, I.K.

    1995-01-01

    We discuss the transparency of atom-size superconducting tunnel junctions by comparing experimental values of the normal resistance and Subgap Structure with the theoretical predictions for these phenomena by Landauer's formula and Multiple Andreev Reflection, respectively

  14. Diagnosis and Treatment Strategy of Achalasia Subtypes and Esophagogastric Junction Outflow Obstruction Based on High-Resolution Manometry.

    Science.gov (United States)

    Ihara, Eikichi; Muta, Kazumasa; Fukaura, Keita; Nakamura, Kazuhiko

    2017-01-01

    Based on Chicago Classification version 3.0, the disorders of esophagogastric junction outflow obstruction (EGJOO) include achalasia (types I, II and III) and EGJOO. Although no curative treatments are currently available for the treatment of the disorders of EGJOO, medical treatments, endoscopic pneumatic dilation (PD), laparoscopic Heller myotomy (LHM), and per-oral endoscopic myotomy (POEM) are usually the sought-after modes of treatment. Since the etiology and pathogenesis might vary depending on the types of EGJOO disorders, treatment strategies should be considered based on those subtypes. Based on the accumulated evidences, the treatment strategies of our institution are as follows: effects of medical treatments on achalasia are limited. Either PD or LHM/POEM can be considered a first-line in achalasia type I, according to the patient's wish. PD and POEM can be considered first-line in achalasia types II and III, respectively. Conversely, In EGJOO, medical treatments including drugs like acotiamide and/or diltiazem can be tested as a first-line, and PD and POEM will be considered second and third-line treatments, respectively. Key Messages: The classification of subtypes based on high-resolution manometry will help us consider which treatment option can be selected as a first-line treatment depending upon the subtypes of disorders of EGJOO. Acotiamide has the potential to cure patients with EGJOO. © 2016 S. Karger AG, Basel.

  15. Highly pressurized partially miscible liquid-liquid flow in a micro-T-junction. II. Theoretical justifications and modeling

    Science.gov (United States)

    Qin, Ning; Wen, John Z.; Ren, Carolyn L.

    2017-04-01

    This is the second part of a two-part study on a partially miscible liquid-liquid flow (carbon dioxide and deionized water) that is highly pressurized and confined in a microfluidic T-junction. In the first part of this study, we reported experimental observations of the development of flow regimes under various flow conditions and the quantitative characteristics of the drop flow including the drop length, after-generation drop speed, and periodic spacing development between an emerging drop and the newly produced one. Here in part II we provide theoretical justifications to our quantitative studies on the drop flow by considering (1) C O2 hydration at the interface with water, (2) the diffusion-controlled dissolution of C O2 molecules in water, and (3) the diffusion distance of the dissolved C O2 molecules. Our analyses show that (1) the C O2 hydration at the interface is overall negligible, (2) a saturation scenario of the dissolved C O2 molecules in the vicinity of the interface will not be reached within the contact time between the two fluids, and (3) molecular diffusion does play a role in transferring the dissolved molecules, but the diffusion distance is very limited compared with the channel geometry. In addition, mathematical models for the drop length and the drop spacing are developed based on the observations in part I, and their predictions are compared to our experimental results.

  16. Two-dimensional Josephson junction arrays coupled through a high-Q cavity

    DEFF Research Database (Denmark)

    Filatrella, G.; Pedersen, Niels Falsig; Wiesenfeld, K.

    2001-01-01

    the cavity. The highly resonant cavity induces synchronized behavior, which is qualitatively different than what is familiar from other studies on nonlinear oscillator arrays, for example the Kuramoto model. We also address the effects of disorder, as well as the role of detuning between the spontaneous...

  17. Corrosion-Resistant High-Entropy Alloys: A Review

    Directory of Open Access Journals (Sweden)

    Yunzhu Shi

    2017-02-01

    Full Text Available Corrosion destroys more than three percent of the world’s gross domestic product. Therefore, the design of highly corrosion-resistant materials is urgently needed. By breaking the classical alloy-design philosophy, high-entropy alloys (HEAs possess unique microstructures, which are solid solutions with random arrangements of multiple elements. The particular locally-disordered chemical environment is expected to lead to unique corrosion-resistant properties. In this review, the studies of the corrosion-resistant HEAs during the last decade are summarized. The corrosion-resistant properties of HEAs in various aqueous environments and the corrosion behavior of HEA coatings are presented. The effects of environments, alloying elements, and processing methods on the corrosion resistance are analyzed in detail. Furthermore, the possible directions of future work regarding the corrosion behavior of HEAs are suggested.

  18. High chlorpyrifos resistance in Culex pipiens mosquitoes: strong synergy between resistance genes

    Science.gov (United States)

    Alout, H; Labbé, P; Berthomieu, A; Makoundou, P; Fort, P; Pasteur, N; Weill, M

    2016-01-01

    We investigated the genetic determinism of high chlorpyrifos resistance (HCR), a phenotype first described in 1999 in Culex pipiens mosquitoes surviving chlorpyrifos doses ⩾1 mg l−1 and more recently found in field samples from Tunisia, Israel or Indian Ocean islands. Through chlorpyrifos selection, we selected several HCR strains that displayed over 10 000-fold resistance. All strains were homozygous for resistant alleles at two main loci: the ace-1 gene, with the resistant ace-1R allele expressing the insensitive G119S acetylcholinesterase, and a resistant allele of an unknown gene (named T) linked to the sex and ace-2 genes. We constructed a strain carrying only the T-resistant allele and studied its resistance characteristics. By crossing this strain with strains harboring different alleles at the ace-1 locus, we showed that the resistant ace-1R and the T alleles act in strong synergy, as they elicited a resistance 100 times higher than expected from a simple multiplicative effect. This effect was specific to chlorpyrifos and parathion and was not affected by synergists. We also examined how HCR was expressed in strains carrying other ace-1-resistant alleles, such as ace-1V or the duplicated ace-1D allele, currently spreading worldwide. We identified two major parameters that influenced the level of resistance: the number and the nature of the ace-1-resistant alleles and the number of T alleles. Our data fit a model that predicts that the T allele acts by decreasing chlorpyrifos concentration in the compartment targeted in insects. PMID:26463842

  19. Fabrication of Josephson Junction without shadow evaporation

    Science.gov (United States)

    Wu, Xian; Ku, Hsiangsheng; Long, Junling; Pappas, David

    We developed a new method of fabricating Josephson Junction (Al/AlOX/Al) without shadow evaporation. Statistics from room temperature junction resistance and measurement of qubits are presented. Unlike the traditional ``Dolan Bridge'' technique, this method requires two individual lithographies and straight evaporations of Al. Argon RF plasma is used to remove native AlOX after the first evaporation, followed by oxidation and second Al evaporation. Junction resistance measured at room temperature shows linear dependence on Pox (oxidation pressure), √{tox} (oxidation time), and inverse proportional to junction area. We have seen 100% yield of qubits made with this method. This method is promising because it eliminates angle dependence during Junction fabrication, facilitates large scale qubits fabrication.

  20. Cementitious artificial aggregate particles for high-skid resistance pavements

    OpenAIRE

    DE LARRARD, François; MARTINEZ CASTILLO, Rafael; SEDRAN, Thierry; HAUZA, Philippe; POIRIER, Jean Eric

    2012-01-01

    For some critical road sections, a high skid resistance of wearing course is required to minimise the risk of traffic accidents. Nowadays this skid resistance is mainly brought by the use of special aggregates as calcined bauxite, a scarce and expensive material. The paper presents a patented technology, where a special high-performance mortar is produced and crushed at early age. These cementitious artificial aggregates (CAA) can display aggregate properties close to those of calcined bauxit...

  1. Highly noise resistant multiqubit quantum correlations

    Science.gov (United States)

    Laskowski, Wiesław; Vértesi, Tamás; Wieśniak, Marcin

    2015-11-01

    We analyze robustness of correlations of the N-qubit GHZ and Dicke states against white noise admixture. For sufficiently large N, the Dicke states (for any number of excitations) lead to more robust violation of local realism than the GHZ states (e.g. for N > 8 for the W state). We also identify states that are the most resistant to white noise. Surprisingly, it turns out that these states are the GHZ states augmented with fully product states. Based on our numerical analysis conducted up to N = 8, and an analytical formula derived for any N parties, we conjecture that the three-qubit GHZ state augmented with a product of (N - 3) pure qubits is the most robust against white noise admixture among any N-qubit state. As a by-product, we derive a single Bell inequality and show that it is violated by all pure entangled states of a given number of parties. This gives an alternative proof of Gisin’s theorem.

  2. Highly noise resistant multiqubit quantum correlations

    International Nuclear Information System (INIS)

    Laskowski, Wiesław; Wieśniak, Marcin; Vértesi, Tamás

    2015-01-01

    We analyze robustness of correlations of the N-qubit GHZ and Dicke states against white noise admixture. For sufficiently large N, the Dicke states (for any number of excitations) lead to more robust violation of local realism than the GHZ states (e.g. for N > 8 for the W state). We also identify states that are the most resistant to white noise. Surprisingly, it turns out that these states are the GHZ states augmented with fully product states. Based on our numerical analysis conducted up to N = 8, and an analytical formula derived for any N parties, we conjecture that the three-qubit GHZ state augmented with a product of (N − 3) pure qubits is the most robust against white noise admixture among any N-qubit state. As a by-product, we derive a single Bell inequality and show that it is violated by all pure entangled states of a given number of parties. This gives an alternative proof of Gisin’s theorem. (paper)

  3. Genetic Determinants of High-Level Oxacillin Resistance in Methicillin-Resistant Staphylococcus aureus.

    Science.gov (United States)

    Pardos de la Gandara, Maria; Borges, Vitor; Chung, Marilyn; Milheiriço, Catarina; Gomes, João Paulo; de Lencastre, Herminia; Tomasz, Alexander

    2018-06-01

    Methicillin-resistant Staphylococcus aureus (MRSA) strains carry either a mecA - or a mecC -mediated mechanism of resistance to beta-lactam antibiotics, and the phenotypic expression of resistance shows extensive strain-to-strain variation. In recent communications, we identified the genetic determinants associated with the stringent stress response that play a major role in the antibiotic resistant phenotype of the historically earliest "archaic" clone of MRSA and in the mecC -carrying MRSA strain LGA251. Here, we sought to test whether or not the same genetic determinants also contribute to the resistant phenotype of highly and homogeneously resistant (H*R) derivatives of a major contemporary MRSA clone, USA300. We found that the resistance phenotype was linked to six genes ( fruB , gmk , hpt , purB , prsA , and relA ), which were most frequently targeted among the analyzed 20 H*R strains (one mutation per clone in 19 of the 20 H*R strains). Besides the strong parallels with our previous findings (five of the six genes matched), all but one of the repeatedly targeted genes were found to be linked to guanine metabolism, pointing to the key role that this pathway plays in defining the level of antibiotic resistance independent of the clonal type of MRSA. Copyright © 2018 American Society for Microbiology.

  4. Effect of physiological age on radiation resistance of some bacteria that are highly radiation resistant

    International Nuclear Information System (INIS)

    Keller, L.C.; Maxcy, R.B.

    1984-01-01

    Physiological age-dependent variation in radiation resistance was studied for three bacteria that are highly radiation resistant: Micrococcus radiodurans, Micrococcus sp. isolate C-3, and Moraxella sp. isolate 4. Stationary-phase cultures of M. radiodurans and isolate C-3 were much more resistant to gamma radiation than were log-phase cultures. This pattern of relative resistance was reversed for isolate 4. Resistance of isolate 4 to UV light was also greater during log phase, although heat resistance and NaCl tolerance after heat stresses were greater during stationary phase. Radiation-induced injury of isolate 4 compared with injury of Escherichia coli B suggested that the injury process, as well as the lethal process, was affected by growth phase. The hypothesis that growth rate affects radiation resistance was tested, and results were interpreted in light of the probable confounding effect of methods used to alter growth rates of bacteria. These results indicate that dose-response experiments should be designed to measure survival during the most resistant growth phase of the organism under study. The timing is particularly important when extrapolations of survival results might be made to potential irradiation processes for foods. 17 references

  5. Impact of fluorine co-implantation on B deactivation and leakage currents in low and high energy Ge preamorphised p+n shallow junctions

    International Nuclear Information System (INIS)

    Girginoudi, D.; Tsiarapas, C.

    2008-01-01

    The impact of fluorine (F) co-implantation on boron (B) deactivation and B TED, as well as on the I-V characteristics of p + n shallow junctions, have been studied for low (10 keV) and high (70 keV) energy Ge preamorphised (PAI) n-type Si samples, that were annealed at 600 deg. C and 700 deg. C. Transmission electron microscopy revealed the existence of defects and dislocation loops (DLs) in the EOR region. It has been found that F stabilizes the EOR defect population via the increase of EOR defect density and the percentage of the stable DLs. This phenomenon is more pronounced when the preamorphisation is shallow (10 keV Ge energy). SIMS and sheet resistance measurements showed the formation of BICs, which implies B deactivation and increased B TED, especially in the shallow PAI samples and at the 700 deg. C annealing temperature. The role of F on B deactivation is multiplex: in the 70 keV PAI samples, and at 600 deg. C annealing temperature, F forms clusters with B causing further B deactivation. In the case of 700 deg. C annealing temperature, F probably forms fluorine-vacancy (F-V) clusters that trap silicon interstitials (Is), thus reducing the possibility of forming BICs and, therefore, resulting in B re-activation and suppression of B TED. Conversely, in the 10-keV PAI samples, and irrespective of the annealing temperature, F improves significantly the sheet resistance, and we suggest that this is a result of the contribution of two physical mechanisms: in the EOR region, F is trapped into DLs, which release less Is than other types of defects. In the amorphous part of Si, there are probably F-V clusters that trap the Is released from the EOR region. Although F in most cases improves B deactivation, it increases the reverse leakage currents, probably due to the stabilization of the EOR defects. As regards the carrier-transport mechanisms, it has been found that the dominant mechanism is the generation-recombination process under forward bias as well as under

  6. Mechanisms of Evolution in High-Consequence Drug Resistance Plasmids

    Directory of Open Access Journals (Sweden)

    Susu He

    2016-12-01

    Full Text Available The dissemination of resistance among bacteria has been facilitated by the fact that resistance genes are usually located on a diverse and evolving set of transmissible plasmids. However, the mechanisms generating diversity and enabling adaptation within highly successful resistance plasmids have remained obscure, despite their profound clinical significance. To understand these mechanisms, we have performed a detailed analysis of the mobilome (the entire mobile genetic element content of a set of previously sequenced carbapenemase-producing Enterobacteriaceae (CPE from the National Institutes of Health Clinical Center. This analysis revealed that plasmid reorganizations occurring in the natural context of colonization of human hosts were overwhelmingly driven by genetic rearrangements carried out by replicative transposons working in concert with the process of homologous recombination. A more complete understanding of the molecular mechanisms and evolutionary forces driving rearrangements in resistance plasmids may lead to fundamentally new strategies to address the problem of antibiotic resistance.

  7. Considerations in designing and using superconductors with high resistivity matrices

    International Nuclear Information System (INIS)

    Bartlett, R.J.; Carlson, R.V.; Laquer, H.L.; Migliori, A.

    1976-01-01

    Superconductors are often designed with matrices of much higher residual resistivities than copper for reasons of manufacturing (multifilamentary Nb 3 Sn in CuSn bronze) or loss reduction (mixed matrix NbTi with Cu and CuNi). The high resistivity matrix may complicate or degrade contact resistances at the joints, generate excess heat, reduce the stability of the conductor, and interfere with the observation of flux flow resistivities in the 10 -12 Ω-cm region. The minimization of these effects is discussed, presenting both simple and more refined models for the current transfer length, and it is shown how variations in transfer length (with current), particularly under significant self field conditions, can mimic flux flow resistivity

  8. Polystyrene negative resist for high-resolution electron beam lithography

    Directory of Open Access Journals (Sweden)

    Ma Siqi

    2011-01-01

    Full Text Available Abstract We studied the exposure behavior of low molecular weight polystyrene as a negative tone electron beam lithography (EBL resist, with the goal of finding the ultimate achievable resolution. It demonstrated fairly well-defined patterning of a 20-nm period line array and a 15-nm period dot array, which are the densest patterns ever achieved using organic EBL resists. Such dense patterns can be achieved both at 20 and 5 keV beam energies using different developers. In addition to its ultra-high resolution capability, polystyrene is a simple and low-cost resist with easy process control and practically unlimited shelf life. It is also considerably more resistant to dry etching than PMMA. With a low sensitivity, it would find applications where negative resist is desired and throughput is not a major concern.

  9. Variability study of Si nanowire FETs with different junction gradients

    Directory of Open Access Journals (Sweden)

    Jun-Sik Yoon

    2016-01-01

    Full Text Available Random dopant fluctuation effects of gate-all-around Si nanowire field-effect transistors (FETs are investigated in terms of different diameters and junction gradients. The nanowire FETs with smaller diameters or shorter junction gradients increase relative variations of the drain currents and the mismatch of the drain currents between source-drain and drain-source bias change in the saturation regime. Smaller diameters decreased current drivability critically compared to standard deviations of the drain currents, thus inducing greater relative variations of the drain currents. Shorter junction gradients form high potential barriers in the source-side lightly-doped extension regions at on-state, which determines the magnitude of the drain currents and fluctuates the drain currents greatly under thermionic-emission mechanism. On the other hand, longer junction gradients affect lateral field to fluctuate the drain currents greatly. These physical phenomena coincide with correlations of the variations between drain currents and electrical parameters such as threshold voltages and parasitic resistances. The nanowire FETs with relatively-larger diameters and longer junction gradients without degrading short channel characteristics are suggested to minimize the relative variations and the mismatch of the drain currents.

  10. Limitations of the dual voltage clamp method in assaying conductance and kinetics of gap junction channels

    OpenAIRE

    Wilders, R.; Jongsma, H.J.

    1992-01-01

    The electrical properties of gap junctions in cell pairs are usually studied by means of the dual voltage clamp method. The voltage across the junctional channels, however, cannot be controlled adequately due to an artificial resistance and a natural resistance, both connected in series with the gap junction. The access resistances to the cell interior of the recording pipettes make up the artificial resistance. The natural resistance consists of the cytoplasmic access resistances to the tigh...

  11. High Temperature Resistant Exhaust Valve Spindle

    DEFF Research Database (Denmark)

    Bihlet, Uffe Ditlev

    by experimental laser cladding. Heat treatments proved that these alloys were precipitation hardenable, and that some of them reached high levels of hardness. Based on these results, five Ni-based alloys containing 35-45 wt% Cr and 4-6 wt% Nb were ordered, to narrow down the feasible alloy compositions. During...

  12. miR-Let7A Controls the Cell Death and Tight Junction Density of Brain Endothelial Cells under High Glucose Condition.

    Science.gov (United States)

    Song, Juhyun; Yoon, So Ra; Kim, Oh Yoen

    2017-01-01

    Hyperglycemia-induced stress in the brain of patients with diabetes triggers the disruption of blood-brain barrier (BBB), leading to diverse neurological diseases including stroke and dementia. Recently, the role of microRNA becomes an interest in the research for deciphering the mechanism of brain endothelial cell damage under hyperglycemia. Therefore, we investigated whether mircoRNA Let7A (miR-Let7A) controls the damage of brain endothelial (bEnd.3) cells against high glucose condition. Cell viability, cell death marker expressions (p-53, Bax, and cleaved poly ADP-ribose polymerase), the loss of tight junction proteins (ZO-1 and claudin-5), proinflammatory response (interleukin-6, tumor necrosis factor- α ), inducible nitric oxide synthase, and nitrite production were confirmed using MTT, reverse transcription-PCR, quantitative-PCR, Western blotting, immunofluorescence, and Griess reagent assay. miR-Let7A overexpression significantly prevented cell death and loss of tight junction proteins and attenuated proinflammatory response and nitrite production in the bEnd.3 cells under high glucose condition. Taken together, we suggest that miR-Let7A may attenuate brain endothelial cell damage by controlling cell death signaling, loss of tight junction proteins, and proinflammatory response against high glucose stress. In the future, the manipulation of miR-Let7A may be a novel solution in controlling BBB disruption which leads to the central nervous system diseases.

  13. Kapitza thermal resistance studied by high-frequency photothermal radiometry

    International Nuclear Information System (INIS)

    Horny, Nicolas; Chirtoc, Mihai; Hamaoui, Georges; Fleming, Austin; Ban, Heng

    2016-01-01

    Kapitza thermal resistance is determined using high-frequency photothermal radiometry (PTR) extended for modulation up to 10 MHz. Interfaces between 50 nm thick titanium coatings and silicon or stainless steel substrates are studied. In the used configuration, the PTR signal is not sensitive to the thermal conductivity of the film nor to its optical absorption coefficient, thus the Kapitza resistance is directly determined from single thermal parameter fits. Results of thermal resistances show the significant influence of the nature of the substrate, as well as of the presence of free electrons at the interface.

  14. Quantum dynamics of small Josephson junctions: an application to superconductivity in granular films

    International Nuclear Information System (INIS)

    Fisher, M.P.A.

    1986-01-01

    This thesis is devoted to a study of the quantum dynamics of small Josephson junctions. Of interest are those features of the junction's behavior which depend explicitly on the quantum mechanical nature of the phase difference phi between the superconductors. In Chapters I and II several calculations are described which focus on the junction's DC resistance. A fully quantum mechanical Hamiltonian is employed that incorporates the dissipative effects due to the unpaired electrons by coupling to a bath of harmonic oscillators. It is shown that the model exhibits a novel zero temperature phase transition as a function of the strength of the dissipation. In the low dissipation regime the phase is free to tunnel quantum mechanically and the junction's resistance is finite; in response to an external current, tunnelling induces successive 2π phase slips leading to a finite voltage state. In contrast, in the high dissipation regime, tunnelling is suppressed and the junction behaves as a superconductor carrying current with no resistive losses. In Chapters III and IV, these results are applied in an attempt to explain the recent observation that in ultra thin Sn films there is apparently a universal normal state sheet resistance above which superconductivity cannot be established

  15. Corrosion Resistant Coatings for High Temperature Applications

    Energy Technology Data Exchange (ETDEWEB)

    Besman, T.M.; Cooley, K.M.; Haynes, J.A.; Lee, W.Y.; Vaubert, V.M.

    1998-12-01

    Efforts to increase efficiency of energy conversion devices have required their operation at ever higher temperatures. This will force the substitution of higher-temperature structural ceramics for lower temperature materials, largely metals. Yet, many of these ceramics will require protection from high temperature corrosion caused by combustion gases, atmospheric contaminants, or the operating medium. This paper discusses examples of the initial development of such coatings and materials for potential application in combustion, aluminum smelting, and other harsh environments.

  16. Solidification structure and abrasion resistance of high chromium white irons

    Science.gov (United States)

    Doğan, Ö. N.; Hawk, J. A.; Laird, G.

    1997-06-01

    Superior abrasive wear resistance, combined with relatively low production costs, makes high Cr white cast irons (WCIs) particularly attractive for applications in the grinding, milling, and pumping apparatus used to process hard materials. Hypoeutectic, eutectic, and hypereutectic cast iron compositions, containing either 15 or 26 wt pct chromium, were studied with respect to the macrostructural transitions of the castings, solidification paths, and resulting microstructures when poured with varying superheats. Completely equiaxed macrostructures were produced in thick section castings with slightly hypereutectic compositions. High-stress abrasive wear tests were then performed on the various alloys to examine the influence of both macrostructure and microstructure on wear resistance. Results indicated that the alloys with a primarily austenitic matrix had a higher abrasion resistance than similar alloys with a pearlitic/bainitic matrix. Improvement in abrasion resistance was partially attributed to the ability of the austenite to transform to martensite at the wear surface during the abrasion process.

  17. Barrier Parameters and Current Transport Characteristics of Ti/ p-InP Schottky Junction Modified Using Orange G (OG) Organic Interlayer

    Science.gov (United States)

    Sreenu, K.; Venkata Prasad, C.; Rajagopal Reddy, V.

    2017-10-01

    A Ti/Orange G/ p-InP metal/interlayer/semiconductor (MIS) junction has been prepared with Orange G (OG) organic layer by electron beam evaporation and spin coating processes. The electrical properties of Ti/ p-InP metal/semiconductor (MS) and Ti/OG/ p-InP MIS junctions have been analyzed based on current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics. The MIS junction exhibited higher rectifying behavior than the MS junction. The higher barrier height (BH) of the MIS junction compared with the MS junction indicates effective modification by the OG layer. Also, the BH, ideality factor, shunt resistance, and series resistance were extracted based on the I- V characteristic, Cheung's and Norde's methods, and the ΨS- V plot. The BH evaluated by Cheung's and Norde's methods and the ΨS- V plot was shown to be similar, confirming the reliability and validity of the methods applied. The extracted interface state density ( N SS) of the MIS junction was less than for the MS junction, revealing that the OG organic layer reduced the N SS value. Analysis demonstrated that, in the lower bias region, the reverse current conduction mechanism was dominated by Poole-Frenkel emission for both the MS and MIS junction. Meanwhile, in the higher bias region, Schottky emission governed the reverse current conduction mechanism. The results suggest that such OG layers have potential for use in high-quality electronic devices.

  18. Study on the high temperature crack resistance of tungsten

    International Nuclear Information System (INIS)

    Uskov, E.I.; Babak, A.V.

    1983-01-01

    The possibility of a multiple use of tungsten specimens in crack resistance tests in the temperature range of 600-2000 deg C is studied. It is established experimentally that the minimum length of growth of a main crack is 1x10 -4 m for the most effective repeated use of specimens. A flow diagram of mechanical tests is suggested for investigating high temperature tungsten crack resistance and estimating the degree of weakening the grain-boundary bond

  19. Elimination of bus voltage impact on temperature sensitive electrical parameter during turn-on transition for junction temperature estimation of high-power IGBT modules

    DEFF Research Database (Denmark)

    Luo, Haoze; Iannuzzo, Francesco; Blaabjerg, Frede

    2017-01-01

    Junction temperature is of great importance to safe operating area of IGBT modules. Various information of the IGBT operating state is reflected on electrical characteristics during turn-on transient. A unified extraction method for internal junction temperature via dynamic thermo......-sensitive electrical parameters (DTSEP) during turn-on transient is proposed. Two DTSEP, turn-on delay time (tdon) and the maximum increasing rate of collector current dic/dt(max), are combined to eliminate the bus voltage impact. Using the inherent emitter-auxiliary inductor LeE in high-power modules, the temperature......-dependent DTSEPs can be converted into a low-voltage and measurable signal. Finally, experiment results are exhibited to verify the effectiveness of proposed method....

  20. A transparent diode with high rectifying ratio using amorphous indium-gallium-zinc oxide/SiN{sub x} coupled junction

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Myung-Jea; Kim, Myeong-Ho; Choi, Duck-Kyun, E-mail: duck@hanyang.ac.kr [Department of Materials Science and Engineering, Hanyang University, Seoul 133-791 (Korea, Republic of)

    2015-08-03

    We introduce a transparent diode that shows both high rectifying ratio and low leakage current at process temperature below 250 °C. This device is clearly distinguished from all previous transparent diodes in that the rectifying behavior results from the junction between a semiconductor (amorphous indium-gallium-zinc oxide (a-IGZO)) and insulator (SiN{sub x}). We systematically study the properties of each junction within the device structure and demonstrate that the a-IGZO/SiN{sub x} junction is the source of the outstanding rectification. The electrical characteristics of this transparent diode are: 2.8 A/cm{sup 2} on-current density measured at −7 V; lower than 7.3 × 10{sup −9} A/cm{sup 2} off-current density; 2.53 ideality factor; and high rectifying ratio of 10{sup 8}–10{sup 9}. Furthermore, the diode structure has a transmittance of over 80% across the visible light range. The operating principle of the indium-tin oxide (ITO)/a-IGZO/SiN{sub x}/ITO device was examined with an aid of the energy band diagram and we propose a preliminary model for the rectifying behavior. Finally, we suggest further directions for research on this transparent diode.

  1. Electrical resistivity of UBe13 in high magnetic fields

    International Nuclear Information System (INIS)

    Schmiedeshoff, G.M.; Lacerda, A.; Fisk, Z.; Smith, J.L.

    1996-01-01

    We have measured the temperature dependent electrical resistivity of single and polycrystal samples of UBe 13 in high magnetic fields. Two maxima in the resistivity are observed at T M1 and T M2 . T M1 , the temperature of the colder maximum, increases quadratically with magnetic field H, a field dependence previously observed under hydrostatic pressure. The high temperature maximum at T M2 emerges in fields above about 4 T and increases linearly with H, a behavior which may be due to a sharpening of the crystal field levels associated with a depression of the Kondo effect by high magnetic fields. copyright 1996 The American Physical Society

  2. Onset of chaos and dc current-voltage characteristics of rf-driven Josephson junctions in the low-frequency regime

    International Nuclear Information System (INIS)

    Chi, C.C.; Vanneste, C.

    1990-01-01

    A comprehensive picture of the dc current-voltage (I-V) characteristics of rf-driven Josephson junctions in the low-frequency regime is presented. The boundary of the low-frequency regime is roughly defined by the junction characteristic frequency for overdamped junctions, and by the inverse of the junction damping time for underdamped junctions. An adiabatic model valid for the low-frequency regime is used to describe the overall shapes of the I-V curves, which is in good agreement with both the numerical simulations and the experimental results. For underdamped junctions, the Shapiro steps are the prominent features on the I-V curves if the rf frequency is sufficiently below the boundary. As the rf frequency is increased towards the boundary, large negatively-going tails on top of the Shapiro steps are observed both experimentally and numerically. Numerical simulations using the resistively- and capacitively-shunted-junction model (RCSJ model) reveal that the negatively-going tail is a signature of the low-frequency boundary of the junction chaotic regime. With use of the adiabatic model and the existence of plasma oscillations for underdamped junctions, the onset of chaos and its effect on the Shapiro steps can be fully explained. The high-frequency limit of the adiabatic model and the chaotic behavior of the Josephson junctions beyond the low-frequency regime are also briefly discussed

  3. Mechanisms of Evolution in High-Consequence Drug Resistance Plasmids.

    Science.gov (United States)

    He, Susu; Chandler, Michael; Varani, Alessandro M; Hickman, Alison B; Dekker, John P; Dyda, Fred

    2016-12-06

    The dissemination of resistance among bacteria has been facilitated by the fact that resistance genes are usually located on a diverse and evolving set of transmissible plasmids. However, the mechanisms generating diversity and enabling adaptation within highly successful resistance plasmids have remained obscure, despite their profound clinical significance. To understand these mechanisms, we have performed a detailed analysis of the mobilome (the entire mobile genetic element content) of a set of previously sequenced carbapenemase-producing Enterobacteriaceae (CPE) from the National Institutes of Health Clinical Center. This analysis revealed that plasmid reorganizations occurring in the natural context of colonization of human hosts were overwhelmingly driven by genetic rearrangements carried out by replicative transposons working in concert with the process of homologous recombination. A more complete understanding of the molecular mechanisms and evolutionary forces driving rearrangements in resistance plasmids may lead to fundamentally new strategies to address the problem of antibiotic resistance. The spread of antibiotic resistance among Gram-negative bacteria is a serious public health threat, as it can critically limit the types of drugs that can be used to treat infected patients. In particular, carbapenem-resistant members of the Enterobacteriaceae family are responsible for a significant and growing burden of morbidity and mortality. Here, we report on the mechanisms underlying the evolution of several plasmids carried by previously sequenced clinical Enterobacteriaceae isolates from the National Institutes of Health Clinical Center (NIH CC). Our ability to track genetic rearrangements that occurred within resistance plasmids was dependent on accurate annotation of the mobile genetic elements within the plasmids, which was greatly aided by access to long-read DNA sequencing data and knowledge of their mechanisms. Mobile genetic elements such as

  4. Development of radiation-resisting high molecular-weight materials

    International Nuclear Information System (INIS)

    Nakagawa, Tsutomu

    1976-01-01

    The excellent radiation-resisting polyvinyl chloride developed at the opportunity of the research on the relationships between the protection of living body and the polymer-technological protection from radiation is reviewed. The report is divided into four main parts, namely 1) the change in the molecular arrangement of market-available, high molecular-weight materials by gamma-ray irradiation, 2) the protection of high molecular-weight materials from radiation, 3) the relationships between the biological radiation-protective substances and the change to radiation-resisting property of synthesized high molecular-weight substances, and 4) the development of the radiation-resisting high molecular-weight materials as metal-collecting agents. Attention is paid to the polyvinyl chloride having N-methyl-dithio-carbamate radical (PMD), synthesized by the author et. al., that has excellent radiation-resisting property. PMD has some possibility to form thiol- and amino-radicals necessary to protect living things from radiation. It is believed that the protection effects of N-methyl-dithio-carbamate radical are caused by the relatively stable S radical produced by the energy transfer. PMD film is suitable for the irradiation of foods, because it hardly changes the permeability of oxygen and carbon dioxide. PMD produces mercaptide or chelate. A new metal-collecting agent (PSDC) having reactivity with the metallic ions with radiation-resisting property was developed, which is derived from polyvinyl chloride and sodium N-methyl-N-carboxy-methyl-dithio-carbamate. (Iwakiri, K.)

  5. A graphene integrated highly transparent resistive switching memory device

    Science.gov (United States)

    Dugu, Sita; Pavunny, Shojan P.; Limbu, Tej B.; Weiner, Brad R.; Morell, Gerardo; Katiyar, Ram S.

    2018-05-01

    We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random-access memory (TRRAM) device. The indium tin oxide (ITO)/Al2O3/graphene nonvolatile memory device possesses a high transmittance of >82% in the visible region (370-700 nm) and exhibits stable and non-symmetrical bipolar switching characteristics with considerably low set and reset voltages (ITO/Al2O3/Pt device and studied its switching characteristics for comparison and a better understanding of the ITO/Al2O3/graphene device characteristics. The conduction mechanisms in high and low resistance states were analyzed, and the observed polarity dependent resistive switching is explained based on electro-migration of oxygen ions.

  6. Probability based high temperature engineering creep and structural fire resistance

    CERN Document Server

    Razdolsky, Leo

    2017-01-01

    This volume on structural fire resistance is for aerospace, structural, and fire prevention engineers; architects, and educators. It bridges the gap between prescriptive- and performance-based methods and simplifies very complex and comprehensive computer analyses to the point that the structural fire resistance and high temperature creep deformations will have a simple, approximate analytical expression that can be used in structural analysis and design. The book emphasizes methods of the theory of engineering creep (stress-strain diagrams) and mathematical operations quite distinct from those of solid mechanics absent high-temperature creep deformations, in particular the classical theory of elasticity and structural engineering. Dr. Razdolsky’s previous books focused on methods of computing the ultimate structural design load to the different fire scenarios. The current work is devoted to the computing of the estimated ultimate resistance of the structure taking into account the effect of high temperatur...

  7. CMOS pixel sensors on high resistive substrate for high-rate, high-radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko, E-mail: thirono@uni-bonn.de [Physikalisches Institute der Universität Bonn, Bonn (Germany); Barbero, Marlon; Breugnon, Patrick; Godiot, Stephanie [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Gonella, Laura; Hemperek, Tomasz; Hügging, Fabian; Krüger, Hans [Physikalisches Institute der Universität Bonn, Bonn (Germany); Liu, Jian; Pangaud, Patrick [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Peric, Ivan [IPE, Karlsruher Institut für Technologie, Karlsruhe (Germany); Pohl, David-Leon [Physikalisches Institute der Universität Bonn, Bonn (Germany); Rozanov, Alexandre [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Rymaszewski, Piotr [Physikalisches Institute der Universität Bonn, Bonn (Germany); Wang, Anqing [CPPM, Aix-Marseille Universite, CNRS/IN2P3, Marseille (France); Wermes, Norbert [Physikalisches Institute der Universität Bonn, Bonn (Germany)

    2016-09-21

    A depleted CMOS active pixel sensor (DMAPS) has been developed on a substrate with high resistivity in a high voltage process. High radiation tolerance and high time resolution can be expected because of the charge collection by drift. A prototype of DMAPS was fabricated in a 150 nm process by LFoundry. Two variants of the pixel layout were tested, and the measured depletion depths of the variants are 166 μm and 80 μm. We report the results obtained with the prototype fabricated in this technology.

  8. Method of separate determination of high-ohmic sample resistance and contact resistance

    Directory of Open Access Journals (Sweden)

    Vadim A. Golubiatnikov

    2015-09-01

    Full Text Available A method of separate determination of two-pole sample volume resistance and contact resistance is suggested. The method is applicable to high-ohmic semiconductor samples: semi-insulating gallium arsenide, detector cadmium-zinc telluride (CZT, etc. The method is based on near-contact region illumination by monochromatic radiation of variable intensity from light emitting diodes with quantum energies exceeding the band gap of the material. It is necessary to obtain sample photo-current dependence upon light emitting diode current and to find the linear portion of this dependence. Extrapolation of this linear portion to the Y-axis gives the cut-off current. As the bias voltage is known, it is easy to calculate sample volume resistance. Then, using dark current value, one can determine the total contact resistance. The method was tested for n-type semi-insulating GaAs. The contact resistance value was shown to be approximately equal to the sample volume resistance. Thus, the influence of contacts must be taken into account when electrophysical data are analyzed.

  9. A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

    International Nuclear Information System (INIS)

    Boucard, F.; Roger, F.; Chakarov, I.; Zhuk, V.; Temkin, M.; Montagner, X.; Guichard, E.; Mathiot, D.

    2005-01-01

    This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling

  10. A comprehensive solution for simulating ultra-shallow junctions: From high dose/low energy implant to diffusion annealing

    Energy Technology Data Exchange (ETDEWEB)

    Boucard, F. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France)]. E-mail: Frederic.Boucard@silvaco.com; Roger, F. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Chakarov, I. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Zhuk, V. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Temkin, M. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Montagner, X. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Guichard, E. [Silvaco Data Systems, 55 Rue Blaise Pascal, F38330 Montbonnot (France); Mathiot, D. [InESS, CNRS and Universite Louis Pasteur, 23 Rue du Loess, F67037 Strasbourg (France)]. E-mail: Daniel.Mathiot@iness.c-strasbourg.fr

    2005-12-05

    This paper presents a global approach permitting accurate simulation of the process of ultra-shallow junctions. Physically based models of dopant implantation (BCA) and diffusion (including point and extended defects coupling) are integrated within a unique simulation tool. A useful set of the relevant parameters has been obtained through an original calibration methodology. It is shown that this approach provides an efficient tool for process modelling.

  11. Borides - a new generation of highly resistant materials?

    International Nuclear Information System (INIS)

    Telle, R.

    1988-01-01

    High-duty ceramics are on advance in all sectors where materials with extremely good resistance to high temperatures and wear are required. The group of oxides, nitrides and carbides in use for quite a time now recently has been increased by the metal borides which offer among others economic advantages in certain applications. The drawbacks of these materials still to be reduced are their brittleness and susceptibility to oxidation and corrosion. Current research work on the thermodynamics of such systems, on the interaction between structure and properties, and on means to improve strength and resistance to wear are expected to soon open up new applications. (orig.) [de

  12. Ultra-low specific on-resistance high-voltage vertical double diffusion metal–oxide–semiconductor field-effect transistor with continuous electron accumulation layer

    International Nuclear Information System (INIS)

    Ma Da; Luo Xiao-Rong; Wei Jie; Tan Qiao; Zhou Kun; Wu Jun-Feng

    2016-01-01

    A new ultra-low specific on-resistance (R on,sp ) vertical double diffusion metal–oxide–semiconductor field-effect transistor (VDMOS) with continuous electron accumulation (CEA) layer, denoted as CEA-VDMOS, is proposed and its new current transport mechanism is investigated. It features a trench gate directly extended to the drain, which includes two PN junctions. In on-state, the electron accumulation layers are formed along the sides of the extended gate and introduce two continuous low-resistance current paths from the source to the drain in a cell pitch. This mechanism not only dramatically reduces the R on,sp but also makes the R on,sp almost independent of the n-pillar doping concentration (N n ). In off-state, the depletion between the n-pillar and p-pillar within the extended trench gate increases the N n , and further reduces the R on,sp . Especially, the two PN junctions within the trench gate support a high gate–drain voltage in the off-state and on-state, respectively. However, the extended gate increases the gate capacitance and thus weakens the dynamic performance to some extent. Therefore, the CEA-VDMOS is more suitable for low and medium frequencies application. Simulation indicates that the CEA-VDMOS reduces the R on,sp by 80% compared with the conventional super-junction VDMOS (CSJ-VDMOS) at the same high breakdown voltage (BV). (paper)

  13. Quantum oscillation of the c-axis resistivity due to entrance of pancake vortices into micro-fabricated Bi2Sr2CaCu2O8+δ intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Kakeya, I.; Fukui, K.; Kawamata, K.; Yamamoto, T.; Kadowaki, K.

    2008-01-01

    The c-axis resistance in Bi 2 Sr 2 CaCu 2 O 8+δ intrinsic Josephson junctions (IJJs) with areas of the ab-plane less than 2 μm 2 were measured as functions of applied magnetic field and angle to the crystalline axes. When the magnetic field is tilted off from the lock-in state of Josephson vortices, several sharp dips are found. The separation between the dips approaches to the value corresponding to φ 0 with further tilting the external magnetic field. This behavior is attributed to the penetration of a quantized pancake vortex into the tiny IJJ. This argument is further supported by the result that the c-axis resistance under magnetic fields parallel to the c-axis shows identical stepwise behavior

  14. Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

    International Nuclear Information System (INIS)

    Gessner, T.; Irmer, K.

    1983-01-01

    A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

  15. High Radiation Resistance Inverted Metamorphic Solar Cell, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — The innovation in this SBIR Phase II project is the development of a unique triple junction inverted metamorphic technology (IMM), which will enable the...

  16. High resistivity in InP by helium bombardment

    International Nuclear Information System (INIS)

    Focht, M.W.; Macrander, A.T.; Schwartz, B.; Feldman, L.C.

    1984-01-01

    Helium implants over a fluence range from 10 11 to 10 16 ions/cm 2 , reproducibly form high resistivity regions in both p- and n-type InP. Average resistivities of greater than 10 9 Ω cm for p-type InP and of 10 3 Ω cm for n-type InP are reported. Results are presented of a Monte Carlo simulation of helium bombardment into the compound target InP that yields the mean projected range and the range straggling

  17. Molecular electronic junction transport

    DEFF Research Database (Denmark)

    Solomon, Gemma C.; Herrmann, Carmen; Ratner, Mark

    2012-01-01

    Whenasinglemolecule,oracollectionofmolecules,isplacedbetween two electrodes and voltage is applied, one has a molecular transport junction. We discuss such junctions, their properties, their description, and some of their applications. The discussion is qualitative rather than quantitative, and f...

  18. A versatile and highly sensitive homogeneous electrochemical strategy based on the split aptamer binding-induced DNA three-way junction and exonuclease III-assisted target recycling.

    Science.gov (United States)

    Hou, Ting; Li, Wei; Zhang, Lianfang; Li, Feng

    2015-08-21

    Herein, a highly sensitive and versatile homogeneous electrochemical biosensing strategy is proposed, based on the split aptamer-incorporated DNA three-way junction and the exonuclease (Exo) III-assisted target recycling. The aptamer of adenosine triphosphate (ATP, chosen as the model analyte) is split into two fragments and embedded in single-stranded DNA1 and DNA2, respectively. ATP specifically binds with the split aptamers, bringing DNA1 and DNA2 close to each other, thus inducing the DNA three-way junction formation through the partial hybridization among DNA1, DNA2 and the methylene blue-labelled MB-DNA. Subsequently, MB-DNA is specifically digested by Exo III, releasing a MB-labelled mononucleotide, as well as a DNA1-ATP-DNA2 complex, which acts as the recycled target and hybridizes with another intact MB-DNA to initiate the subsequent cycling cleavage process. As a result, large amounts of MB-labelled mononucleotides are released, generating a significantly amplified electrochemical signal toward the ATP assay. To the best of our knowledge, it is the first example to successfully incorporate split aptamers into DNA three-way junctions and to be adopted in a homogeneous electrochemical assay. In addition to high sensitivity, this strategy also exhibits the advantages of simplicity and convenience, because it is carried out in a homogeneous solution, and sophisticated electrode modification processes are avoided. By simply changing the sequences of the split aptamer fragments, this versatile strategy can be easily adopted to assay a large spectrum of targets. Due to its advantages of high sensitivity, excellent selectivity, versatility and simple operation, the as-proposed approach has great potential to be applied in biochemical research and clinical practices.

  19. HIGH TEMPERATURE CORROSION RESISTANCE OF METALLIC MATERIALS IN HARSH CONDITIONS

    OpenAIRE

    Novello, Frederic; Dedry, Olivier; De Noose, Vincent; Lecomte-Beckers, Jacqueline

    2014-01-01

    Highly efficient energy recovery from renewable sources and from waste incineration causes new problems of corrosion at high temperature. A similar situation exists for new recycling processes and new energy storage units. These corrosions are generally considered to be caused by ashes or molten salts, the composition of which differs considerably from one plant to another. Therefore, for the assessment of corrosion-resistance of advanced materials, it is essential to precisely evaluate the c...

  20. Multiple negative differential resistance devices with ultra-high peak-to-valley current ratio for practical multi-valued logic and memory applications

    Science.gov (United States)

    Shin, Sunhae; Rok Kim, Kyung

    2015-06-01

    In this paper, we propose a novel multiple negative differential resistance (NDR) device with ultra-high peak-to-valley current ratio (PVCR) over 106 by combining tunnel diode with a conventional MOSFET, which suppresses the valley current with transistor off-leakage level. Band-to-band tunneling (BTBT) in tunnel junction provides the first peak, and the second peak and valley are generated from the suppression of diffusion current in tunnel diode by the off-state MOSFET. The multiple NDR curves can be controlled by doping concentration of tunnel junction and the threshold voltage of MOSFET. By using complementary multiple NDR devices, five-state memory is demonstrated only with six transistors.

  1. High-Temperature Ceramic Matrix Composite with High Corrosion Resistance

    Science.gov (United States)

    2010-06-02

    description of high temperature oxidation processes of composite ceramic materials of ZrB2 - SiC and ZrB2-SiC-Zr(Mo)Si2 systems up to high (~1300 °C...analysis was applied using MІN-7 mineralogical microscope and a set of standard immersion liquids with the known values of refraction coefficients...2.0 V) corresponds to the simultaneous formation of ZrO2 zirconium dioxide of monoclinic modification and Zr(OH)4 zirconium hydroxide which is

  2. Computed tomography image using sub-terahertz waves generated from a high-T{sub c} superconducting intrinsic Josephson junction oscillator

    Energy Technology Data Exchange (ETDEWEB)

    Kashiwagi, T., E-mail: kashiwagi@ims.tsukuba.ac.jp; Minami, H.; Kadowaki, K. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba (Japan); Division of Materials Science, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1, Tennodai, Tsukuba, Ibaraki 305-8573 (Japan); Nakade, K.; Saiwai, Y.; Kitamura, T.; Watanabe, C.; Ishida, K.; Sekimoto, S.; Asanuma, K.; Yasui, T.; Shibano, Y. [Graduate School of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba (Japan); Tsujimoto, M. [Department of Electronic Science and Engineering, Kyoto University, Nishikyo-ku, Kyoto 615-8510 (Japan); Yamamoto, T. [Wide Bandgap Materials Group, Optical and Electronic Materials Unit, Environment and Energy Materials Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan); Marković, B. [Faculty of Sciences, University of Montenegro, George Washington Str., 81000 Podgorica (Montenegro); Mirković, J. [Faculty of Science, University of Montenegro, and CETI, Put Radomira Ivanovica, 81000 Podgorica (Montenegro); Klemm, R. A. [Department of Physics, University of Central Florida, 4000 Central Florida Blvd., Orlando, Florida 32816-2385 (United States)

    2014-02-24

    A computed tomography (CT) imaging system using monochromatic sub-terahertz coherent electromagnetic waves generated from a device constructed from the intrinsic Josephson junctions in a single crystalline mesa structure of the high-T{sub c} superconductor Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8+δ} was developed and tested on three samples: Standing metallic rods supported by styrofoam, a dried plant (heart pea) containing seeds, and a plastic doll inside an egg shell. The images obtained strongly suggest that this CT imaging system may be useful for a variety of practical applications.

  3. Development of Creep-Resistant and Oxidation-Resistant Austenitic Stainless Steels for High Temperature Applications

    Science.gov (United States)

    Maziasz, Philip J.

    2018-01-01

    Austenitic stainless steels are cost-effective materials for high-temperature applications if they have the oxidation and creep resistance to withstand prolonged exposure at such conditions. Since 1990, Oak Ridge National Laboratory (ORNL) has developed advanced austenitic stainless steels with creep resistance comparable to Ni-based superalloy 617 at 800-900°C based on specially designed "engineered microstructures" utilizing a microstructure/composition database derived from about 20 years of radiation effect data on steels. The wrought high temperature-ultrafine precipitate strengthened (HT-UPS) steels with outstanding creep resistance at 700-800°C were developed for supercritical boiler and superheater tubing for fossil power plants in the early 1990s, the cast CF8C-Plus steels were developed in 1999-2001 for land-based gas turbine casing and diesel engine exhaust manifold and turbocharger applications at 700-900°C, and, in 2015-2017, new Al-modified cast stainless steels with oxidation and creep resistance capabilities up to 950-1000°C were developed for automotive exhaust manifold and turbocharger applications. This article reviews and summarizes their development and their properties and applications.

  4. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-01-01

    Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

  5. Study of current instabilities in high resistivity gallium arsenide

    International Nuclear Information System (INIS)

    Barraud, A.

    1968-01-01

    We have shown the existence and made a study of the current oscillations produced in high-resistivity gallium arsenide by a strong electric field. The oscillations are associated with the slow travelling of a region of high electrical field across the whole sample. An experimental study of the properties of these instabilities has made it possible for us to distinguish this phenomenon from the Gunn effect, from acoustic-electric effects and from contact effects. In order to account for this type of instability, a differential trapping mechanism involving repulsive impurities is proposed; this mechanism can reduce the concentration of charge carriers in the conduction band at strong electrical fields and can lead to the production of a high-field domain. By developing this model qualitatively we have been able to account for all the properties of high-resistance gallium arsenide crystals subjected to a strong electrical field: increase of the Hall constant, existence of a voltage threshold for these oscillations, production of domains of high field, low rate of propagation of these domains, and finally the possibility of inverting the direction of the propagation of the domain without destroying the latter. A quantitative development of the model makes it possible to calculate the various characteristic parameters of these instabilities. Comparison with experiment shows that there is a good agreement, the small deviations coming especially from the lack of knowledge concerning transport properties in gallium arsenide subjected to high fields. From a study of this model, it appears that the instability phenomenon can occur over a wide range of repulsive centre concentrations, and also for a large range of resistivities. This is the reason why it appears systematically in gallium arsenide of medium and high resistivity. (authors) [fr

  6. Development of a high strength, hydrogen-resistant austenitic alloy

    International Nuclear Information System (INIS)

    Chang, K.M.; Klahn, D.H.; Morris, J.W. Jr.

    1980-08-01

    Research toward high-strength, high toughness nonmagnetic steels for use in the retaining rings of large electrical generators led to the development of a Ta-modified iron-based superalloy (Fe-36 Ni-3 Ti-3 Ta-0.5 Al-1.3 Mo-0.3 V-0.01 B) which combines high strength with good toughness after suitable aging. The alloy did, however, show some degradation in fatigue resistance in gaseous hydrogen. This sensitivity was associated with a deformation-induced martensitic transformation near the fracture surface. The addition of a small amount of chromium to the alloy suppressed the martensite transformation and led to a marked improvement in hydrogen resistance

  7. High temperature annealing of minority carrier traps in irradiated MOCVD n(+)p InP solar cell junctions

    Science.gov (United States)

    Messenger, S. R.; Walters, R. J.; Summers, G. P.

    1993-01-01

    Deep level transient spectroscopy was used to monitor thermal annealing of trapping centers in electron irradiated n(+)p InP junctions grown by metalorganic chemical vapor deposition, at temperatures ranging from 500 up to 650K. Special emphasis is given to the behavior of the minority carrier (electron) traps EA (0.24 eV), EC (0.12 eV), and ED (0.31 eV) which have received considerably less attention than the majority carrier (hole) traps H3, H4, and H5, although this work does extend the annealing behavior of the hole traps to higher temperatures than previously reported. It is found that H5 begins to anneal above 500K and is completely removed by 630K. The electron traps begin to anneal above 540K and are reduced to about half intensity by 630K. Although they each have slightly different annealing temperatures, EA, EC, and ED are all removed by 650K. A new hole trap called H3'(0.33 eV) grows as the other traps anneal and is the only trap remaining at 650K. This annealing behavior is much different than that reported for diffused junctions.

  8. NbN tunnel junctions

    International Nuclear Information System (INIS)

    Villegier, J.C.; Vieux-Rochaz, L.; Goniche, M.; Renard, P.; Vabre, M.

    1984-09-01

    All-niobium nitride Josephon junctions have been prepared successfully using a new processing called SNOP: Selective Niobium (nitride) Overlap Process. Such a process involves the ''trilayer'' deposition on the whole wafer before selective patterning of the electrodes by optically controlled dry reactive ion etching. Only two photomask levels are need to define an ''overlap'' or a ''cross-type'' junction with a good accuracy. The properties of the niobium nitride films deposited by DC-magnetron sputtering and the surface oxide growth are analysed. The most critical point to obtain high quality and high gap value junctions resides in the early stage of the NbN counterelectrode growth. Some possibilities to overcome such a handicap exist even if the fabrication needs substrate temperatures below 250 0 C

  9. Experimental study on high cycle thermal fatigue in T-junction. Effect of local flow velocity on transfer of temperature fluctuation from fluid to structure

    International Nuclear Information System (INIS)

    Kimura, Nobuyuki; Ono, Ayako; Miyakoshi, Hiroyuki; Kamide, Hideki

    2009-01-01

    A quantitative evaluation on high cycle thermal fatigue due to temperature fluctuation in fluid is of importance for structural integrity in the reactor. It is necessary for the quantitative evaluation to investigate occurrence and propagation processes of temperature fluctuation, e.g., decay of fluctuation intensity near structures and transfer of temperature fluctuation from fluid to structures. The JSME published a guideline for evaluation of high-cycle thermal fatigue of a pipe as the JSME guideline in 2003. This JSME standard covers T-pipe junction used in LWRs operated in Japan. In the guideline, the effective heat transfer coefficients were obtained from temperature fluctuations in fluid and structure in experiments. In the previous studies, the effective heat transfer coefficients were 2 - 10 times larger than the heat transfer coefficients under steady state conditions in a straight tube. In this study, a water experiment of T-junction was performed to evaluate the transfer characteristics of temperature fluctuation from fluid to structure. In the experiment, temperatures in fluid and structure were measured simultaneously at 20 positions to obtain spatial distributions of the effective heat transfer coefficient. In addition, temperatures in structure and local velocities in fluid were measured simultaneously to evaluate the correlation between the temperature and velocity under the non-stationary fields. The large heat transfer coefficients were registered at the region where the local velocity was high. Furthermore it was found that the heat transfer coefficients were correlated with the time-averaged turbulent heat flux near the pipe wall. (author)

  10. Large spin accumulation due to spin-charge coupling across a break-junction

    Science.gov (United States)

    Chen, Shuhan; Zou, Han; Chui, Siu-Tat; Ji, Yi

    2013-03-01

    We investigate large spin signals in break-junction nonlocal spin valves (NLSV). The break-junction is a nanometer-sized vacuum tunneling gap between the spin detector and the nonmagnetic channel, formed by electro-static discharge. The spin signals can be either inverted or non-inverted and the magnitudes are much larger than those of standard NLSV. Spin signals with high percentage values (10% - 0%) have been observed. When the frequency of the a.c. modulation is varied, the absolute magnitudes of signals remain the same although the percentage values change. These observations affirm the nonlocal nature of the measurements and rule out local magnetoresistive effects. Owing to the spin-charge coupling across the break-junction, the spin accumulation in a ferromagnet splits into two terms. One term decays on the charge screening length (0.1 nm) and the other decays on the spin diffusion length (10 nm nm). The magnitude of the former is proportional to the resistance of the junction. Therefore a highly resistive break-junction leads to a large spin accumulation and thereby a large spin signal. The signs of the spin signal are determined by the relationship between spin-dependent conductivities, diffusion constants, and density of states of the ferromagnet. This work was supported by US DOE grant No. DE-FG02-07ER46374.

  11. Junction depth dependence of breakdown in silicon detector diodes

    International Nuclear Information System (INIS)

    Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

    1996-01-01

    The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

  12. Rugged Low-Resistance Contacts To High-Tc Superconductors

    Science.gov (United States)

    Caton, Randall; Selim, Raouf; Byvik, Charles E.; Buoncristiani, A. Martin

    1992-01-01

    Newly developed technique involving use of gold makes possible to fabricate low-resistance contacts with rugged connections to high-Tc superconductors. Gold diffused into specimen of superconducting material by melting gold beads onto surface of specimen, making strong mechanical contacts. Shear strength of gold bead contacts greater than epoxy or silver paste. Practical use in high-current-carrying applications of new high-Tc materials, including superconducting magnets, long-wavelength sensors, electrical ground planes at low temperatures, and efficient transmission of power.

  13. Development of high-performance concrete having high resistance to chloride penetration

    International Nuclear Information System (INIS)

    Oh, Byung Hwan; Cha, Soo Won; Jang, Bong Seok; Jang, Seung Yup

    2002-01-01

    The resistance to chloride penetration is one of the simplest measures to determine the durability of concrete, e.g. resistance to freezing and thawing, corrosion of steel in concrete and other chemical attacks. Thus, high-performance concrete may be defined as the concrete having high resistance to chloride penetration as well as high strength. The purpose of this paper is to investigate the resistance to chloride penetration of different types of concrete and to develop high-performance concrete that has very high resistance to chloride penetration, and thus, can guarantee high durability. A large number of concrete specimens have been tested by the rapid chloride permeability test method as designated in AASHTO T 277 and ASTM C 1202. The major test variables include water-to-binder ratios, type of cement, type and amount of mineral admixtures (silica fume, fly ash and blast-furnace slag), maximum size of aggregates and air-entrainment. Test results show that concrete containing optimal amount of silica fume shows very high resistance to chloride penetration, and high-performance concrete developed in this study can be efficiently employed to enhance the durability of concrete structures in severe environments such as nuclear power plants, water-retaining structures and other offshore structures

  14. Adaptation to high current using low external resistances eliminates power overshoot in microbial fuel cells

    KAUST Repository

    Hong, Yiying; Call, Douglas F.; Werner, Craig M.; Logan, Bruce E.

    2011-01-01

    . Acclimation of the high external resistance reactors for a few cycles to low external resistance (5. Ω), and therefore higher current densities, eliminated power overshoot. MFCs initially acclimated to low external resistances exhibited both higher current

  15. impairs gap junction function causing congenital cataract

    Indian Academy of Sciences (India)

    Navya

    2017-03-24

    Mar 24, 2017 ... experiment showed a lower dye diffusion distance of Cx46 V44M cells, ... Studies of connexins show that channel gating and permeability .... have found that connexin assembled into gap junction plaques is not soluble in 1% ..... high glucose reduces gap junction activity in microvascular endothelial cells.

  16. impairs gap junction function causing congenital cataract

    Indian Academy of Sciences (India)

    LIJUAN CHEN

    2017-12-20

    Dec 20, 2017 ... showed a lower dye diffusion distance of Cx46 V44M cells, which indicates that the gap junction intercellular ... permeability could be affected by alterations of charged residues of .... bled into gap junction plaques is not soluble in 1% Triton ..... regulation of connexin 43 expression by high glucose reduces.

  17. High resisting alloy without Co used in nuclear industry

    International Nuclear Information System (INIS)

    Balleret, Alain.

    1976-01-01

    The description is given of a high resistance alloy characterised in that it includes by weight 5 to 14% molybdenum, 19 to 32% chromium, 2 to 8% tungsten, 6 to 50% nickel, 0.2 to 2.8% carbon, 0 to 5% vanadium, 0 to 5% zirconium, 0 to 5% niobium-tantalum, 0 to 3% manganese, 0 to 3% silicon, 0 to 1.5% boron and iron in an amount to ensure the global balance of this alloy [fr

  18. Characterization of active CMOS pixel sensors on high resistive substrate

    Energy Technology Data Exchange (ETDEWEB)

    Hirono, Toko; Hemperek, Tomasz; Huegging, Fabian; Krueger, Hans; Rymaszewski, Piotr; Wermes, Norbert [Physikalisches Institut, Universitaet Bonn, Bonn (Germany)

    2016-07-01

    Active CMOS pixel sensors are very attractive as radiation imaging pixel detector because they do not need cost-intensive fine pitch bump bonding. High radiation tolerance and time resolution are required to apply those sensors to upcoming particle physics experiments. To achieve these requirements, the active CMOS pixel sensors were developed on high resistive substrates. Signal charges are collected faster by drift in high resistive substrates than in standard low resistive substrates yielding also a higher radiation tolerance. A prototype of the active CMOS pixel sensor has been fabricated in the LFoundry 150 nm CMOS process on 2 kΩcm substrate. This prototype chip was thinned down to 300 μm and the backside has been processed and can contacted by an aluminum contact. The breakdown voltage is around -115 V, and the depletion width has been measured to be as large as 180 μm at a bias voltage of -110 V. Gain and noise of the readout circuitry agree with the designed values. Performance tests in the lab and test beam have been done before and after irradiation with X-rays and neutrons. In this presentation, the measurement results of the active CMOS prototype sensors are shown.

  19. Directly patternable high refractive index ferroelectric sol–gel resist

    Energy Technology Data Exchange (ETDEWEB)

    Garoli, D., E-mail: denis.garoli@iit.it [Istituto Italiano di Tecnologia, Via Morego 16, 16136 Genova (Italy); Della Giustina, G. [Industrial Engineering Department, University of Padova and INSTM, Via Marzolo 9, 35131 Padova (Italy)

    2015-08-15

    The development of a ferroelectric negative tone sol–gel resist for Ultraviolet (UV) and Electron Beam (EB) lithography is presented. A new system based on Lead Zirconate Titanate (PZT, with formula PbZr{sub 0.52}Ti{sub 0.48}O{sub 3}) was synthesized by sol–gel method. The lithographic performances were investigated and several structures spanning from the micron range down to less than 50 nm have been achieved by UV and EB lithography. The system interaction with UV light and Electron beam was thoroughly characterized by FT-IT spectroscopy. The exposed PZT was annealed at high temperatures in order to study the crystalline phase evolution, the optical constants values and stability of patterned structures. After exposure and annealing, the refractive index of the material can vary from 1.68 up to 2.33 (@400 nm), while the ferroelectric behaviour seems to be maintained after high temperature annealing. These results suggest a possible application of PZT resist not only as ferroelectric but also as nanopatternable high refractive index material. Moreover, direct nanopatterning by means of Focused Ion Beam (FIB) lithography was verified and the potentiality for the preparation of high aspect ratio hollow nanostructures will be presented. - Highlights: • A new formula directly patternable PZT high refractive index resist is presented. • The gel is sensitive to both UV and electron beam exposure. • The refractive index can vary from 1.68 up to 2.33 (@400 nm). • Direct nanopatterning by means of Focused Ion Beam (FIB) lithography was verified. • High aspect ratio hollow nanostructures will be presented.

  20. Doubled Shapiro steps in a topological Josephson junction

    Science.gov (United States)

    Li, Yu-Hang; Song, Juntao; Liu, Jie; Jiang, Hua; Sun, Qing-Feng; Xie, X. C.

    2018-01-01

    We study the transport properties of a superconductor-quantum spin Hall insulator-superconductor hybrid system in the presence of microwave radiation. Instead of adiabatic analysis or use of the resistively shunted junction model, we start from the microscopic Hamiltonian and calculate the d.c. current directly with the help of the nonequilibrium Green's function method. The numerical results show that (i) the I-V curves of background current due to multiple Andreev reflections exhibit a different structure from those in the conventional junctions, and (ii) all Shapiro steps are visible and appear one by one at high frequencies, while at low frequencies, the steps evolve exactly as the Bessel functions and the odd steps are completely suppressed, implying a fractional Josephson effect.

  1. Development of NbN Josephson junctions with TaxN semi-metal barrier; application to RSFQ circuits

    International Nuclear Information System (INIS)

    Setzu, R.

    2007-11-01

    This thesis research, brought to the development and optimization of SNS (Superconductor / Normal Metal / Superconductor) Josephson junctions with NbN electrodes and a high resistivity Ta x N barrier. We were able to point out Josephson oscillations for frequencies above 1 THz and operation temperatures up to 10 K, which constituted the original goal of the project. This property makes these junctions unique and well adapted for realizing ultra-fast RSFQ (Rapid Single Flux Quantum) logic circuits suitable for spatial telecommunications. We showed a good reproducibility of Ta x N film properties as a function of the sputtering parameters. The NbN/Ta x N/NbN tri-layers exhibit high critical temperature (16 K). The junctions showed a clear dependence of the R n I c product as a function of the partial nitrogen pressure inside the reactive plasma; the R n I c is the product between the junction critical current and its normal resistance, and indicates the upper limit Josephson frequency. We have also obtained some really high R n I c products, up to 3.74 mV at 4.2 K for critical current densities of about 15 kA/cm 2 . Junctions show the expected Josephson behaviors, respectively Fraunhofer diffraction and Shapiro steps. up to 14 K. This allows expecting good circuit operations in a relaxed cryogenics environment (with respect to the niobium circuits limited at 4.2 K). The junctions appear to be self-shunted. The SNOP junctions J c -temperature dependence has been fitted by using the long SNS junction model in the dirty limit, which gives a normal metal coherence length of about 3.8 nm at 4.2 K. We have finally studied a multilayer fabrication process, including a common ground plane and bias resistors, suitable for RSFQ logic basic circuits. To conclude we have been able to show the performance superiority of NbN/Ta x N/NbN junctions over the actual niobium junctions, as well as their interest for realizing compact RSFQ logic circuits. In fact these junctions do not

  2. High-resolution NMR studies of chimeric DNA-RNA-DNA duplexes, heteronomous base pairing, and continuous base stacking at junctions

    International Nuclear Information System (INIS)

    Chou, Shanho; Flynn, P.; Wang, A.; Reid, B.

    1991-01-01

    Two symmetrical DNA-RNA-DNA duplex chimeras, d(CGCG)r(AAUU)d(CGCG) (designated rAAUU) and d(CGCG)r(UAUA)d(CGCG) (designated rUAUA), and a nonsymmetrical chimeric duplex, d(CGTT)r(AUAA)d(TGCG)/d(CGCA)r(UUAU)d(AACG) (designated rAUAA), as well as their pure DNA analogues, containing dU instead of T, have been synthesized by solid-phase phosphoramidite methods and studied by high-resolution NMR techniques. The 1D imino proton NOE spectra of these d-r-d chimeras indicate normal Watson-Crick hydrogen bonding and base stacking at the junction region. Preliminary qualitative NOESY, COSY, and chemical shift data suggest that the internal RNA segment contains C3'-endo (A-type) sugar conformations except for the first RNA residues (position 5 and 17) following the 3' end of the DNA block, which, unlike the other six ribonucleotides, exhibit detectable H1'-H2' J coupling. The nucleosides of the two flanking DNA segments appear to adopt a fairly normal C2'-endo B-DNA conformation except at the junction with the RNA blocks (residues 4 and 16), where the last DNA residue appears to adopt an intermediate sugar conformation. The data indicate that A-type and B-type conformations can coexist in a single short continuous nucleic acid duplex, but these results differ somewhat from previous theoretical model studies

  3. High resistance of some oligotrophic bacteria to ionizing radiation

    International Nuclear Information System (INIS)

    Nikitin, D.I.; Tashtemirova, M.A.; Pitryuk, I.A.; Sorokin, V.V.; Oranskaya, M.S.; Nikitin, L.E.

    1994-01-01

    The resistance of seven cultures of eutrophic and oligotrophic bacteria to gamma radiation (at doses up to 360 Gy) was investigated. The bacteria under study were divided into three groups according to their survival ability after irradiation. Methylobacterium organophilum and open-quotes Pedodermatophilus halotoleransclose quotes (LD 50 = 270 Gy) were highly tolerant. By their tolerance, these organisms approached Deinococcus radiodurans. Aquatic ring-shaped (toroidal) bacteria Flectobacillus major and open-quotes Arcocella aquaticaclose quotes (LD 5 = 173 and 210 Gy, respectively) were moderately tolerant. Eutrophic Pseudomonas fluorescens and Escherichia coli (LD 50 = 43 and 38 Gy, respectively) were the most sensitive. X-ray microanalysis showed that in tolerant bacteria the intracellular content of potassium increased and the content of calcium decreased after irradiation. No changes in the element composition of the eutrophic bacterium E. coli were detected. Possible mechanisms of the resistance of oligotrophic bacteria to gamma radiation are discussed

  4. Low resistance bakelite RPC study for high rate working capability

    International Nuclear Information System (INIS)

    Dai, T.; Han, L.; Hou, S.; Liu, M.; Li, Q.; Song, H.; Xia, L.; Zhang, Z.

    2014-01-01

    This paper presents series efforts to lower resistance of bakelite electrode plate to improve the RPC capability under high rate working condition. New bakelite material with alkali metallic ion doping has been manufactured and tested. This bakelite is found unstable under large charge flux and need further investigation. A new structure of carbon-embedded bakelite RPC has been developed, which can reduce the effective resistance of electrode by a factor of 10. The prototype of the carbon-embedded chamber could function well under gamma radiation source at event rate higher than 10 kHz/cm 2 . The preliminary tests show that this kind of new structure performs as efficiently as traditional RPCs

  5. Long duration performance of high temperature irradiation resistant thermocouples

    International Nuclear Information System (INIS)

    Rempe, J.; Knudson, D.; Condie, K.; Cole, J.; Wilkins, S.C.

    2007-01-01

    Many advanced nuclear reactor designs require new fuel, cladding, and structural materials. Data are needed to characterize the performance of these new materials in high temperature, radiation conditions. However, traditional methods for measuring temperature in-pile degrade at temperatures above 1100 C degrees. To address this instrumentation need, the Idaho National Laboratory (INL) developed and evaluated the performance of a high temperature irradiation-resistant thermocouple that contains alloys of molybdenum and niobium. To verify the performance of INL's recommended thermocouple design, a series of high temperature (from 1200 to 1800 C) long duration (up to six months) tests has been initiated. This paper summarizes results from the tests that have been completed. Data are presented from 4000 hour tests conducted at 1200 and 1400 C that demonstrate the stability of this thermocouple (less than 2% drift). In addition, post test metallographic examinations are discussed which confirm the compatibility of thermocouple materials throughout these long duration, high temperature tests. (authors)

  6. Stability of High Temperature Standard Platinum Resistance Thermometers at High Temperatures

    OpenAIRE

    Y. A. ABDELAZIZ; F. M. MEGAHED

    2010-01-01

    An investigation of the stability of high temperature standard platinum resistance thermometers HTSPRTs has been carried out for two different designs thermometers (with nominal resistance 0.25 Ω and 2.5 Ω) from two different suppliers. The thermometers were heated for more than 160 hours at temperatures above 960 0C using a vertical furnace with a ceramic block. A study was made of the influence of the heat treatment on the stability of the resistance at the triple point of water, and on the...

  7. Highly corrosion resistant zirconium based alloy for reactor structural material

    International Nuclear Information System (INIS)

    Ito, Yoichi.

    1996-01-01

    The alloy of the present invention is a zirconium based alloy comprising tin (Sn), chromium (Cr), nickel (Ni) and iron (Fe) in zirconium (Zr). The amount of silicon (Si) as an impurity is not more than 60ppm. It is preferred that Sn is from 0.9 to 1.5wt%, that of Cr is from 0.05 to 0.15wt%, and (Fe + Ni) is from 0.17 to 0.5wt%. If not less than 0.12wt% of Fe is added, resistance against nodular corrosion is improved. The upper limit of Fe is preferably 0.40wt% from a view point of uniform suppression for the corrosion. The nodular corrosion can be suppressed by reducing the amount of Si-rich deposition product in the zirconium based alloy. Accordingly, a highly corrosion resistant zirconium based alloy improved for the corrosion resistance of zircaloy-2 and usable for a fuel cladding tube of a BWR type reactor can be obtained. (I.N.)

  8. High alkali-resistant basalt fiber for reinforcing concrete

    International Nuclear Information System (INIS)

    Lipatov, Ya.V.; Gutnikov, S.I.; Manylov, M.S.; Zhukovskaya, E.S.; Lazoryak, B.I.

    2015-01-01

    Highlights: • Doping of basalt fiber with ZrSiO 4 increased its alkali resistance. • Alkali treatment results in formation of protective surface layer on fibers. • Morphology and chemical composition of surface layer were investigated. • Mechanical properties of fibers were analyzed by a Weibull distribution. • Zirconia doped basalt fibers demonstrate high performance in concrete. - Abstract: Basalt glasses and fibers with zirconia content in the range from 0 to 7 wt% were obtained using ZrSiO 4 as a zirconium source. Weight loss and tensile strength loss of fibers after refluxing in alkali solution were determined. Basalt fiber with 5.7 wt% ZrO 2 had the best alkali resistance properties. Alkali treatment results in formation of protective surface layer on fibers. Morphology and chemical composition of surface layer were investigated. It was shown that alkali resistance of zirconia doped basalt fibers is caused by insoluble compounds of Zr 4+ , Fe 3+ and Mg 2+ in corrosion layer. Mechanical properties of initial and leached fibers were evaluated by a Weibull distribution. The properties of basalt fibers with ZrSiO 4 were compared with AR-glass fibers. The performance of concrete with obtained fibers was investigated

  9. Equivalent Josephson junctions

    International Nuclear Information System (INIS)

    Boyadzhiev, T.L.; ); Semerdzhieva, E.G.; Shukrinov, Yu.M.; Fiziko-Tekhnicheskij Inst., Dushanbe

    2008-01-01

    The magnetic field dependences of critical current are numerically constructed for a long Josephson junction with a shunt- or resistor-type microscopic inhomogeneities and compared to the critical curve of a junction with exponentially varying width. The numerical results show that it is possible to replace the distributed inhomogeneity of a long Josephson junction by an inhomogeneity localized at one of its ends, which has certain technological advantages. It is also shown that the critical curves of junctions with exponentially varying width and inhomogeneities localized at the ends are unaffected by the mixed fluxon-antifluxon distributions of the magnetic flux [ru

  10. A Challenge to Improve High-Temperature Platinum Resistance Thermometer

    Science.gov (United States)

    Tanaka, Y.; Widiatmo, J. V.; Harada, K.; Kobayashi, T.; Yamazawa, K.

    2017-05-01

    High-temperature standard platinum resistance thermometers (HTSPRTs) are used to interpolate the international temperature scale of 1990 (ITS-90), especially for temperatures between the aluminum and the silver points. For this, long-term stability of the HTSPRT is essential. CHINO R800-3L type SPRT, which has a nominal resistance at the triple point of water (TPW) around 0.25 Ω , is the one developed earlier for the interpolation of the ITS-90 at this temperature range. Further development to this previous model has been carried out for the purpose of improving the thermal stability. The improvement was focused on reducing the effect coming from the difference in thermal expansion between platinum wire and the quartz frame on which the platinum wire is installed. New HTSPRTs were made by CHINO Corporation. Some series of tests were carried out at CHINO and at NMIJ. Initial tests after the HTSPRT fabrication were done at CHINO, where thermal cycles between 500°C and 980°C were applied to the HTSPRTs to see change in the resistances at the TPW (R_{TPW}) and at the gallium point (R_{Ga}). Repeated resistance measurements at the silver point (R_{Ag}) were performed after completing the thermal cycling test. Before and after every measurement at silver point, R_{TPW} was measured, while before and after every two silver point realization R_{Ga} were measured. After completing this test, the HTSPRTs were transported to NMIJ, where the same repeated measurements at the silver point were done at NMIJ. These were then repeated at CHINO and at NMIJ upon repeated transportation among the institutes, to evaluate some effect due to transportation. This paper reports the details of the above-mentioned tests, the results and the analysis.

  11. Proliferation resistance assessment of high temperature gas reactors

    Energy Technology Data Exchange (ETDEWEB)

    Chikamatsu N, M. A. [Instituto Tecnologico y de Estudios Superiores de Monterrey, Campus Santa Fe, Av. Carlos Lazo No. 100, Santa Fe, 01389 Mexico D. F. (Mexico); Puente E, F., E-mail: midori.chika@gmail.com [ININ, Carretera Mexico-Toluca s/n, 52750 Ocoyoacac, Estado de Mexico (Mexico)

    2014-10-15

    The Generation IV International Forum has established different objectives for the new generation of reactors to accomplish. These objectives are focused on sustain ability, safety, economics and proliferation resistance. This paper is focused on how the proliferation resistance of the High Temperature Gas Reactors (HTGR) is assessed and the advantages that these reactors present currently. In this paper, the focus will be on explaining why such reactors, HTGR, can achieve the goals established by the GIF and can present a viable option in terms of proliferation resistance, which is an issue of great importance in the field of nuclear energy generation. The reason why the HTGR are being targeted in this writing is that these reactors are versatile, and present different options from modular reactors to reactors with the same size as the ones that are being operated today. Besides their versatility, the HTGR has designed features that might improve on the overall sustain ability of the nuclear reactors. This is because the type of safety features and materials that are used open up options for industrial processes to be carried out; cogeneration for instance. There is a small section that mentions how HTGR s are being developed in the international sector in order to present the current world view in this type of technology and the further developments that are being sought. For the proliferation resistance section, the focus is on both the intrinsic and the extrinsic features of the nuclear systems. The paper presents a comparison between the features of Light Water Reactors (LWR) and the HTGR in order to be able to properly compare the most used technology today and one that is gaining international interest. (Author)

  12. Proliferation resistance assessment of high temperature gas reactors

    International Nuclear Information System (INIS)

    Chikamatsu N, M. A.; Puente E, F.

    2014-10-01

    The Generation IV International Forum has established different objectives for the new generation of reactors to accomplish. These objectives are focused on sustain ability, safety, economics and proliferation resistance. This paper is focused on how the proliferation resistance of the High Temperature Gas Reactors (HTGR) is assessed and the advantages that these reactors present currently. In this paper, the focus will be on explaining why such reactors, HTGR, can achieve the goals established by the GIF and can present a viable option in terms of proliferation resistance, which is an issue of great importance in the field of nuclear energy generation. The reason why the HTGR are being targeted in this writing is that these reactors are versatile, and present different options from modular reactors to reactors with the same size as the ones that are being operated today. Besides their versatility, the HTGR has designed features that might improve on the overall sustain ability of the nuclear reactors. This is because the type of safety features and materials that are used open up options for industrial processes to be carried out; cogeneration for instance. There is a small section that mentions how HTGR s are being developed in the international sector in order to present the current world view in this type of technology and the further developments that are being sought. For the proliferation resistance section, the focus is on both the intrinsic and the extrinsic features of the nuclear systems. The paper presents a comparison between the features of Light Water Reactors (LWR) and the HTGR in order to be able to properly compare the most used technology today and one that is gaining international interest. (Author)

  13. Quantum synchronization effects in intrinsic Josephson junctions

    International Nuclear Information System (INIS)

    Machida, M.; Kano, T.; Yamada, S.; Okumura, M.; Imamura, T.; Koyama, T.

    2008-01-01

    We investigate quantum dynamics of the superconducting phase in intrinsic Josephson junctions of layered high-T c superconductors motivated by a recent experimental observation for the switching rate enhancement in the low temperature quantum regime. We pay attention to only the capacitive coupling between neighboring junctions and perform large-scale simulations for the Schroedinger equation derived from the Hamiltonian considering the capacitive coupling alone. The simulation focuses on an issue whether the switching of a junction induces those of the other junctions or not. The results reveal that the superconducting phase dynamics show synchronous behavior with increasing the quantum character, e.g., decreasing the junction plane area and effectively the temperature. This is qualitatively consistent with the experimental result

  14. PM alloy 625M for high strength corrosion resistant applications

    International Nuclear Information System (INIS)

    Rizzo, F.J.; Floreen, S.

    1997-06-01

    In applications where the combination of high strength and good corrosion resistance are required, there have been only a few alloys of choice. A new powder metallurgy alloy has been developed, PM 625M, a niobium modification of Alloy 625, as a material to fill this need. One area of particular interest is the nuclear power industry, where many problems have been encountered with bolts, springs, and guidepins. Mechanical properties and stress corrosion cracking data of PM 625M are presented in this paper

  15. SOI MESFETs on high-resistivity, trap-rich substrates

    Science.gov (United States)

    Mehr, Payam; Zhang, Xiong; Lepkowski, William; Li, Chaojiang; Thornton, Trevor J.

    2018-04-01

    The DC and RF characteristics of metal-semiconductor field-effect-transistors (MESFETs) on conventional CMOS silicon-on-insulator (SOI) substrates are compared to nominally identical devices on high-resistivity, trap-rich SOI substrates. While the DC transfer characteristics are statistically identical on either substrate, the maximum available gain at GHz frequencies is enhanced by ∼2 dB when using the trap-rich substrates, with maximum operating frequencies, fmax, that are approximately 5-10% higher. The increased fmax is explained by the reduced substrate conduction at GHz frequencies using a lumped-element, small-signal model.

  16. Serous tubal intraepithelial carcinoma localizes to the tubal-peritoneal junction: a pivotal clue to the site of origin of extrauterine high-grade serous carcinoma (ovarian cancer).

    Science.gov (United States)

    Seidman, Jeffrey D

    2015-03-01

    Recent data suggest that intraepithelial carcinoma of the fallopian tube [serous tubal intraepithelial carcinoma (STIC)] is the precursor of high-grade extrauterine serous carcinoma. A more specific location for the origin of this lesion is suggested by the recently described junction between the fallopian tubal epithelium and the peritoneum [tubal-peritoneal junction (TPJ)]. Fallopian tubes from 202 patients with advanced-stage high-grade extrauterine serous carcinoma or carcinosarcoma were evaluated histologically as were 124 prophylactic salpingo-oophorectomy specimens. These included 54 patients with BRCA or other high-risk mutation or a family history of BRCA mutation and 70 with a personal or family history of breast carcinoma. STIC was found in 81 of 202 patients with serous carcinoma (40.1%). STIC was present in 73 of 141 (52%) cases in which the fimbriae were present and in 62 of 100 (62%) cases in which the TPJ was present (P not significant). In comparison with these groups, when fimbriae and TPJ were absent, STIC was found in 8 of 61 (13%) cases (PSTIC. The mean size of STIC was 1.7 mm. In 32 cases (39.5%), the lesion was flat and in 49 (60.5%), papillary. The mean size of flat STICs was 0.8 mm as compared with 2.3 mm for papillary STICs (P=0.00005). STIC was identified in the same tissue fragment as the junction in 48 cases. The mean distance of STIC to the junction was 1.8 mm. In 11 cases, STIC was flanked by peritoneal mesothelium on one side and tubal epithelium on the opposite side. In 51 patients, the mean distance of invasive carcinoma from the TPJ was 1.8 mm. This distance was 1.9 mm when STIC was present (37 cases) in comparison with 1.5 mm when STIC was absent (14 cases) (P not significant). In 27 of 42 cases (64%), STIC was contiguous with invasive carcinoma. Lamina propria invasion was present in 71% of cases in which STIC was present as compared with 26% of cases in which STIC was absent (PSTIC was present as compared with 26% of cases in

  17. (--Epicatechin protects the intestinal barrier from high fat diet-induced permeabilization: Implications for steatosis and insulin resistance

    Directory of Open Access Journals (Sweden)

    Eleonora Cremonini

    2018-04-01

    Full Text Available Increased permeability of the intestinal barrier is proposed as an underlying factor for obesity-associated pathologies. Consumption of high fat diets (HFD is associated with increased intestinal permeabilization and increased paracellular transport of endotoxins which can promote steatosis and insulin resistance. This study investigated whether dietary (--epicatechin (EC supplementation can protect the intestinal barrier against HFD-induced permeabilization and endotoxemia, and mitigate liver damage and insulin resistance. Mechanisms leading to loss of integrity and function of the tight junction (TJ were characterized. Consumption of a HFD for 15 weeks caused obesity, steatosis, and insulin resistance in male C57BL/6J mice. This was associated with increased intestinal permeability, decreased expression of ileal TJ proteins, and endotoxemia. Supplementation with EC (2–20 mg/kg body weight mitigated all these adverse effects. EC acted modulating cell signals and the gut hormone GLP-2, which are central to the regulation of intestinal permeability. Thus, EC prevented HFD-induced ileum NOX1/NOX4 upregulation, protein oxidation, and the activation of the redox-sensitive NF-κB and ERK1/2 pathways. Supporting NADPH oxidase as a target of EC actions, in Caco-2 cells EC and apocynin inhibited tumor necrosis alpha (TNFα-induced NOX1/NOX4 overexpression, protein oxidation and monolayer permeabilization. Together, our findings demonstrate protective effects of EC against HFD-induced increased intestinal permeability and endotoxemia. This can in part underlie EC capacity to prevent steatosis and insulin resistance occurring as a consequence of HFD consumption. Keywords: Intestinal permeability, (--Epicatechin, Steatosis, Insulin resistance, Endotoxemia, NADPH oxidase

  18. Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions

    Directory of Open Access Journals (Sweden)

    Mykola O. Semenenko

    2016-01-01

    Full Text Available Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.

  19. High-energy x-ray scattering quantification of in-situ-loading-related strain gradients spanning the dentinoenamel junction (DEJ) in bovine tooth specimens

    International Nuclear Information System (INIS)

    Almer, J.D.; Stock, S.R.

    2010-01-01

    High energy X-ray scattering (80.7keV photons) at station 1-ID of the Advanced Photon Source quantified internal strains as a function of applied stress in mature bovine tooth. These strains were mapped from dentin through the dentinoenamel junction (DEJ) into enamel as a function of applied compressive stress in two small parallelepiped specimens. One specimen was loaded perpendicular to the DEJ and the second parallel to the DEJ. Internal strains in enamel and dentin increased and, as expected from the relative values of the Young's modulus, the observed strains were much higher in dentin than in enamel. Large strain gradients were observed across the DEJ, and the data suggest that the mantle dentin-DEJ-aprismatic enamel structure may shield the near-surface volume of the enamel from large strains. In the enamel, drops in internal strain for applied stresses above 40MPa also suggest that this structure had cracked.

  20. Characterization of magnetic tunnel junction test pads

    DEFF Research Database (Denmark)

    Østerberg, Frederik Westergaard; Kjær, Daniel; Nielsen, Peter Folmer

    2015-01-01

    We show experimentally as well as theoretically that patterned magnetic tunnel junctions can be characterized using the current-in-plane tunneling (CIPT) method, and the key parameters, the resistance-area product (RA) and the tunnel magnetoresistance (TMR), can be determined. The CIPT method...

  1. Superconducting fault current limiter using high-resistive YBCO tapes

    Energy Technology Data Exchange (ETDEWEB)

    Yazawa, T. [Power and Industrial System R and D Center, Toshiba Corporation, 2-4 Suehiro, Tsurumi, Yokohama 230-0045 (Japan)], E-mail: takashi.yazawa@toshiba.co.jp; Koyanagi, K.; Takahashi, M.; Ono, M.; Toba, K.; Takigami, H.; Urata, M. [Power and Industrial System R and D Center, Toshiba Corporation, 2-4 Suehiro, Tsurumi, Yokohama 230-0045 (Japan); Iijima, Y.; Saito, T. [Fujikura Ltd., 1-5-1 Kiba, Koto, Tokyo 135-0042 (Japan); Ameniya, N. [Yokohama National University, 79-1 Tokiwadai, Hodogaya, Yokohama 240-8501 (Japan); Shiohara, Y. [Superconductivity Research Laboratory, ISTEC, 1-10-13 Shinonome, Koto, Tokyo 135-0062 (Japan)

    2008-09-15

    One of the programs in the Ministry of Economy and Trade and Industry (METI) project regarding R and D on YBCO conductor is to evaluate the applicability of the developed conductor toward several applications. This paper focuses on a fault current limiter (FCL) as one of the expected power applications. YBCO tape conductors with ion beam assisted deposition (IBAD) substrate are used in this work. In order to obtain high resistance of the conductor, which is preferable to an FCL, the thickness of the protecting layer made of silver was decreased as possible. Then high-resistive metal stabilizing layer is attached on the silver layer to improve stability. Obtaining the relevant current limiting performance on short sample experiments, model coils were developed to aim the 6.6 kV-class FCL. Short circuit experiments were implemented with a short circuit generator. The coil successfully restricted the short circuit current over 17 kA to about 700 A by the applied voltage of 3.8 kV, which is nominal phase-to-ground voltage. The experimental results show good agreement with computer analyses and show promising toward the application.

  2. Resistive switching in different forming states of Ti/Pr{sub 0.48}Ca{sub 0.52}MnO{sub 3} junctions

    Energy Technology Data Exchange (ETDEWEB)

    Park, Chanwoo; Herpers, Anja; Bruchhaus, Rainer; Dittmann, Regina [PGI-7, FZ Juelich (Germany); Verbeeck, Johan; Egoavil, Ricardo [EMAT, University of Antwerp (Belgium); Borgatti, Francesco [ISMN-CNR, Bologna (Italy); Panaccione, Giancarlo [Laboratorio Nazionale TASC-INFM-CNR, Trieste (Italy); Offi, Francesco [CNISM, Rome (Italy); Dipartimento di Fisica, Universita Roma Tre, Rome (Italy)

    2012-07-01

    The properties of thin oxide films and multilayers are strongly influenced by defects and, therefore, can be controllably tuned by the defect concentration at the interface. For example, due to the charge discontinuity at the SrTiO{sub 3}/KO-KNbO{sub 3}-NbO{sub 2}/SrTiO{sub 3} interface only one direction of polarization in KNbO{sub 3} film is stable. A switchable polarization in KNbO{sub 3} can be realized by creating (oxygen) defects at the interfaces. We carried out density functional theory (DFT) calculations based on the full potential linearized augmented planewave (FLAPW) method as implemented in the FLEUR code for studying the polar interface SrTiO{sub 3}/KNbO{sub 3} and a SrRuO{sub 3}/SrTiO{sub 3}/KNbO{sub 3} tunnel junction. The electronic transport properties of the switchable multiferroic SrRuO{sub 3}/SrTiO{sub 3}/KO-KNbO{sub 3}-NbO{sub 3}/SrTiO{sub 3}/SrRuO{sub 3} heterostructure have been investigated using an embedded Green-function approach. A strong dependence of the (magneto electric) transport properties on the polarization is observed.

  3. Valley dependent transport in graphene L junction

    Science.gov (United States)

    Chan, K. S.

    2018-05-01

    We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

  4. Optical and Electrical Properties of Al/(p)Bi2S3 Schottky Junction

    International Nuclear Information System (INIS)

    Kachari, T.; Wary, G.; Rahman, A.

    2010-01-01

    Thin film Al/(p)Bi 2 S 3 Schottky junctions were prepared by vacuum evaporation under pressure 10 -6 Torr. The p-type Bi 2 S 3 thin films with acceptor concentration (3.36-7.33)x10 16 /cm 3 were obtained by evaporating 'In' along with Bi 2 S 3 powder and then annealing the films at 453K for 5 hours. Different junction-parameters such as ideality factor, barrier height, effective Richardson's constant, short-circuit current, etc. were determined from I-V characteristics. The junctions exhibited rectifying I-V characteristics and also photovoltaic effect. Ideality factor was found to decrease with the increase of temperature. Proper doping, annealing, and hydrogenation are necessary to reduce the series resistance so as to achieve high carrier efficiency. More works are being carried out in this direction.

  5. Energy scales in YBaCuO grain boundary biepitaxial Josephson junctions

    Energy Technology Data Exchange (ETDEWEB)

    Tafuri, F., E-mail: tafuri@na.infn.it [Dip. Ingegneria dell' Informazione, Seconda Universita di Napoli, 81031 Aversa (CE) (Italy); CNR-SPIN, UOS Napoli, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Stornaiuolo, D. [DPMC, University of Geneva, 24 Quai Ernest-Ansermet, 1211 Geneva 4 (Switzerland); CNR-SPIN, UOS Napoli, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Lucignano, P. [CNR-ISC, sede di Tor Vergata, Via del Fosso del Cavaliere 100, 00133 Roma (Italy); Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Galletti, L. [Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Longobardi, L. [Dip. Ingegneria dell' Informazione, Seconda Universita di Napoli, 81031 Aversa (CE) (Italy); Massarotti, D. [Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); CNR-SPIN, UOS Napoli, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Montemurro, D. [NEST and Scuola Normale Superiore, Piazza San Silvestro 12, I-56127 Pisa (Italy); Papari, G. [INPAC - Institute for Nanoscale Physics and Chemistry, Nanoscale Superconductivity and Magnetism Pulsed Fields Group, K.U. Leuven, Celestijnenlaan 200 D, B-3001 Leuven (Belgium); Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); Barone, A.; Tagliacozzo, A. [Dip. Scienze Fisiche, Universita di Napoli Federico II, Monte S. Angelo via Cinthia, 80126 Napoli (Italy); CNR-SPIN, UOS Napoli, Monte S. Angelo via Cinthia, 80126 Napoli (Italy)

    2012-09-15

    Self-assembled nanoscale channels may naturally arise in the growth process of grain boundaries (GBs) in high critical temperature superconductor (HTS) systems, and deeply influence the transport properties of the GB Josephson junctions (JJs). By isolating nano-channels in YBCO biepitaxial JJs and studying their properties, we sort out specific fingerprints of the mesoscopic nature of the contacts. The size of the channels combined to the characteristic properties of HTS favors a special regime of the proximity effect, where normal state coherence prevails on the superconducting coherence in the barrier region. Resistance oscillations from the current-voltage characteristic encode mesoscopic information on the junction and more specifically on the minigap induced in the barrier. Thouless energy emerges as a characteristic energy of these types of Josephson junctions. Possible implications on the understanding of coherent transport of quasiparticles in HTS and of the dissipation mechanisms are discussed, along with elements to take into account when designing HTS nanostructures.

  6. Towards ferromagnet/superconductor junctions on graphene

    International Nuclear Information System (INIS)

    Pakkayil, Shijin Babu

    2015-01-01

    Ever since A. Aspect et al. performed the famous 1982 experiment to prove the violation of Bell's inequality, there have been suggestions to conduct the same experiment in a solid state system. Some of those proposals involve superconductors as the source of entangled electron pair and spin depended interfaces as the optical analogue of polariser/filter. Semiconductors can serve as the best medium for such an experiment due to their long relaxation lengths. So far there are no reports on a ferromagnet/superconductor junctions on a semiconductor even though such junctions has been successfully realised in metallic systems. This thesis reports the successful fabrication of ferromagnet/superconductor junction along with characterising measurements in a perfectly two dimensional zero-gap semiconductor known as graphene. Since it's discovery in 2004, graphene has attracted prodigious interest from both academia and industry due to it's inimitable physical properties: very high mobility, high thermal and electrical conductivity, a high Young's modulus and impermeability. Graphene is also expected to have very long spin relaxation length and high spin life time because of it's low spin orbit coupling. For this reason and since researchers are always looking for novel materials and devices to comply with the high demands for better and faster data storage devices, graphene has emanated as a brand new material system for spin based devices. The very first spin injection and detection in graphene was realised in 2007 and ever since, the focal point of the research has been to improve the spin transport properties. A part of this thesis discusses a new fabrication recipe which has a high yield for successfully contacting graphene with a ferromagnet. A high starting yield for ferromagnetic contacts is a irremissible condition for combining superconducting contacts to the device to fabricate ferromagnet/superconductor junctions. Any fabrication recipe

  7. Towards ferromagnet/superconductor junctions on graphene

    Energy Technology Data Exchange (ETDEWEB)

    Pakkayil, Shijin Babu

    2015-07-01

    Ever since A. Aspect et al. performed the famous 1982 experiment to prove the violation of Bell's inequality, there have been suggestions to conduct the same experiment in a solid state system. Some of those proposals involve superconductors as the source of entangled electron pair and spin depended interfaces as the optical analogue of polariser/filter. Semiconductors can serve as the best medium for such an experiment due to their long relaxation lengths. So far there are no reports on a ferromagnet/superconductor junctions on a semiconductor even though such junctions has been successfully realised in metallic systems. This thesis reports the successful fabrication of ferromagnet/superconductor junction along with characterising measurements in a perfectly two dimensional zero-gap semiconductor known as graphene. Since it's discovery in 2004, graphene has attracted prodigious interest from both academia and industry due to it's inimitable physical properties: very high mobility, high thermal and electrical conductivity, a high Young's modulus and impermeability. Graphene is also expected to have very long spin relaxation length and high spin life time because of it's low spin orbit coupling. For this reason and since researchers are always looking for novel materials and devices to comply with the high demands for better and faster data storage devices, graphene has emanated as a brand new material system for spin based devices. The very first spin injection and detection in graphene was realised in 2007 and ever since, the focal point of the research has been to improve the spin transport properties. A part of this thesis discusses a new fabrication recipe which has a high yield for successfully contacting graphene with a ferromagnet. A high starting yield for ferromagnetic contacts is a irremissible condition for combining superconducting contacts to the device to fabricate ferromagnet/superconductor junctions. Any fabrication recipe

  8. Ultrahigh hardness and high electrical resistivity in nano-twinned, nanocrystalline high-entropy alloy films

    Science.gov (United States)

    Huo, Wenyi; Liu, Xiaodong; Tan, Shuyong; Fang, Feng; Xie, Zonghan; Shang, Jianku; Jiang, Jianqing

    2018-05-01

    Nano-twinned, nanocrystalline CoCrFeNi high-entropy alloy films were produced by magnetron sputtering. The films exhibit a high hardness of 8.5 GPa, the elastic modulus of 161.9 GPa and the resistivity as high as 135.1 μΩ·cm. The outstanding mechanical properties were found to result from the resistance of deformation created by nanocrystalline grains and nano-twins, while the electrical resistivity was attributed to the strong blockage effect induced by grain boundaries and lattice distortions. The results lay a solid foundation for the development of advanced films with structural and functional properties combined in micro-/nano-electronic devices.

  9. Ballistic Josephson junctions based on CVD graphene

    Science.gov (United States)

    Li, Tianyi; Gallop, John; Hao, Ling; Romans, Edward

    2018-04-01

    Josephson junctions with graphene as the weak link between superconductors have been intensely studied in recent years, with respect to both fundamental physics and potential applications. However, most of the previous work was based on mechanically exfoliated graphene, which is not compatible with wafer-scale production. To overcome this limitation, we have used graphene grown by chemical vapour deposition (CVD) as the weak link of Josephson junctions. We demonstrate that very short, wide CVD-graphene-based Josephson junctions with Nb electrodes can work without any undesirable hysteresis in their electrical characteristics from 1.5 K down to a base temperature of 320 mK, and their gate-tuneable critical current shows an ideal Fraunhofer-like interference pattern in a perpendicular magnetic field. Furthermore, for our shortest junctions (50 nm in length), we find that the normal state resistance oscillates with the gate voltage, consistent with the junctions being in the ballistic regime, a feature not previously observed in CVD-graphene-based Josephson junctions.

  10. Supramolecular tunneling junctions

    NARCIS (Netherlands)

    Wimbush, K.S.

    2012-01-01

    In this study a variety of supramolecular tunneling junctions were created. The basis of these junctions was a self-assembled monolayer of heptathioether functionalized ß-cyclodextrin (ßCD) formed on an ultra-flat Au surface, i.e., the bottom electrode. This gave a well-defined hexagonally packed

  11. Design of a charge sensitive preamplifier on high resistivity silicon

    International Nuclear Information System (INIS)

    Radeka, V.; Rehak, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Strueder, L.; Kemmer, J.

    1987-01-01

    A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20pF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3μm for silicon drift detectors. 6 refs., 9 figs

  12. Hybrid tunnel junction contacts to III–nitride light-emitting diodes

    KAUST Repository

    Young, Erin C.

    2016-01-26

    In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\\\bar{2}\\\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  13. Hybrid tunnel junction contacts to III–nitride light-emitting diodes

    KAUST Repository

    Young, Erin C.; Yonkee, Benjamin P.; Wu, Feng; Oh, Sang Ho; DenBaars, Steven P.; Nakamura, Shuji; Speck, James S.

    2016-01-01

    In this work, we demonstrate highly doped GaN p–n tunnel junction (TJ) contacts on III–nitride heterostructures where the active region of the device and the top p-GaN layers were grown by metal organic chemical vapor deposition and highly doped n-GaN was grown by NH3 molecular beam epitaxy to form the TJ. The regrowth interface in these hybrid devices was found to have a high concentration of oxygen, which likely enhanced tunneling through the diode. For optimized regrowth, the best tunnel junction device had a total differential resistivity of 1.5 × 10−4 Ω cm2, including contact resistance. As a demonstration, a blue-light-emitting diode on a ($20\\bar{2}\\bar{1}$) GaN substrate with a hybrid tunnel junction and an n-GaN current spreading layer was fabricated and compared with a reference sample with a transparent conducting oxide (TCO) layer. The tunnel junction LED showed a lower forward operating voltage and a higher efficiency at a low current density than the TCO LED.

  14. Overall Low Extended-Spectrum Cephalosporin Resistance but high Azithromycin Resistance in Neisseria gonorrhoeae in 24 European Countries, 2015.

    Science.gov (United States)

    Cole, Michelle J; Spiteri, Gianfranco; Jacobsson, Susanne; Woodford, Neil; Tripodo, Francesco; Amato-Gauci, Andrew J; Unemo, Magnus

    2017-09-11

    Surveillance of Neisseria gonorrhoeae antimicrobial susceptibility in Europe is performed through the European Gonococcal Antimicrobial Surveillance Programme (Euro-GASP), which additionally provides data to inform the European gonorrhoea treatment guideline; currently recommending ceftriaxone 500 mg plus azithromycin 2 g as first-line therapy. We present antimicrobial susceptibility data from 24 European countries in 2015, linked to epidemiological data of patients, and compare the results to Euro-GASP data from previous years. Antimicrobial susceptibility testing by MIC gradient strips or agar dilution methodology was performed on 2134 N. gonorrhoeae isolates and interpreted using EUCAST breakpoints. Patient variables associated with resistance were established using logistic regression to estimate odds ratios (ORs). In 2015, 1.7% of isolates were cefixime resistant compared to 2.0% in 2014. Ceftriaxone resistance was detected in only one (0.05%) isolate in 2015, compared with five (0.2%) in 2014. Azithromycin resistance was detected in 7.1% of isolates in 2015 (7.9% in 2014), and five (0.2%) isolates displayed high-level azithromycin resistance (MIC ≥ 256 mg/L) compared with one (0.05%) in 2014. Ciprofloxacin resistance remained high (49.4%, vs. 50.7% in 2014). Cefixime resistance significantly increased among heterosexual males (4.1% vs. 1.7% in 2014), which was mainly attributable to data from two countries with high cefixime resistance (~11%), however rates among men-who-have-sex-with-men (MSM) and females continued to decline to 0.5% and 1%, respectively. Azithromycin resistance in MSM and heterosexual males was higher (both 8.1%) than in females (4.9% vs. 2.2% in 2014). The association between azithromycin resistance and previous gonorrhoea infection, observed in 2014, continued in 2015 (OR 2.1, CI 1.2-3.5, p resistance and low overall resistance to ceftriaxone and cefixime. The low cephalosporin resistance may be attributable to the effectiveness

  15. Topological Insulator Bi2Se3/Si-Nanowire-Based p-n Junction Diode for High-Performance Near-Infrared Photodetector.

    Science.gov (United States)

    Das, Biswajit; Das, Nirmalya S; Sarkar, Samrat; Chatterjee, Biplab K; Chattopadhyay, Kalyan K

    2017-07-12

    Chemically derived topological insulator Bi 2 Se 3 nanoflake/Si nanowire (SiNWs) heterojunctions were fabricated employing all eco-friendly cost-effective chemical route for the first time. X-ray diffraction studies confirmed proper phase formation of Bi 2 Se 3 nanoflakes. The morphological features of the individual components and time-evolved hybrid structures were studied using field emission scanning electron microscope. High resolution transmission electron microscopic studies were performed to investigate the actual nature of junction whereas elemental distributions at junction, along with overall stoichiometry of the samples were analyzed using energy dispersive X-ray studies. Temperature dependent current-voltage characteristics and variation of barrier height and ideality factor was studied between 50 and 300 K. An increase in barrier height and decrease in the ideality factor were observed with increasing temperature for the sample. The rectification ratio (I + /I - ) for SiNWs substrate over pristine Si substrate under dark and near-infrared (NIR) irradiation of 890 nm was found to be 3.63 and 10.44, respectively. Furthermore, opto-electrical characterizations were performed for different light power intensities and highest photo responsivity and detectivity were determined to be 934.1 A/W and 2.30 × 10 13 Jones, respectively. Those values are appreciably higher than previous reports for topological insulator based devices. Thus, this work establishes a hybrid system based on topological insulator Bi 2 Se 3 nanoflake and Si nanowire as the newest efficient candidate for advanced optoelectronic materials.

  16. High incidence of multidrug-resistant strains of methicill inresistant ...

    African Journals Online (AJOL)

    Infections of methicillin-resistant Staphylococcus aureus (MRSA) are becoming an increasingly concerning clinical problem. The aim of this study was to assess the development of multidrug resistant strains of MRSA from clinical samples andpossibilities for reducing resistance. This study included a total of seventy-five (75) ...

  17. Planar Josephson tunnel junctions in a transverse magnetic field

    DEFF Research Database (Denmark)

    Monacoa, R.; Aarøe, Morten; Mygind, Jesper

    2007-01-01

    demagnetization effects imposed by the tunnel barrier and electrodes geometry are important. Measurements of the junction critical current versus magnetic field in planar Nb-based high-quality junctions with different geometry, size, and critical current density show that it is advantageous to use a transverse......Traditionally, since the discovery of the Josephson effect in 1962, the magnetic diffraction pattern of planar Josephson tunnel junctions has been recorded with the field applied in the plane of the junction. Here we discuss the static junction properties in a transverse magnetic field where...

  18. Estimation of interface resistivity in bonded Si for the development of high performance radiation detectors

    International Nuclear Information System (INIS)

    Kanno, Ikuo; Yamashita, Makoto; Nomiya, Seiichiro; Onabe, Hideaki

    2007-01-01

    For the development of high performance radiation detectors, direct bonding of Si wafers would be an useful method. Previously, p-n bonded Si were fabricated and they showed diode characteristics. The interface resistivity was, however, not investigated in detail. For the study of interface resistivity, n-type Si wafers with different resistivities were bonded. The resistivity of bonded Si wafers were measured and the interface resistivity was estimated by comparing with the results of model calculations. (author)

  19. Resistive current limiter with high-temperature superconductors. Final report

    International Nuclear Information System (INIS)

    Schubert, M.

    1995-12-01

    Fundamental results of the possibility of using high temperature superconductors (HTSC) in resistive fault current limiters are discussed. Measurement of the homogeneity of BSCCO-powder-in-tube materials were made. In addition, investigations of the transition from superconducting to normalconducting state under AC-current conditions were carried out. Based on these results, simulations of HTSC-materials on ceramic substrate were made and recent results are presented. Important results of the investigations are: 1. Current-limiting without external trigger only possible when the critical current density of HTSC exceeds 10 4 A/cm 2 . 2. Inhomogeneities sometimes cause problems with local destruction. This can be solved by parallel-elements or external trigger. 3. Fast current-limiting causes overvoltages which can be reduced by using parallel-elements. (orig.) [de

  20. Anomalous high-frequency resistivity of a plasma

    International Nuclear Information System (INIS)

    Kruer, W.L.; Dawson, J.M.

    1971-06-01

    In one- and two-dimensional computer simulations we investigate anomalous high-frequency resistivity in a plasma driven by a large electric field oscillating near the electron plasma frequency. The large field excites the oscillating two-stream and the ion-acoustic decay instabilities in agreement with the linear theory. When the ion and electron fluctuations saturate, a strong anomalous heating of the plasma sets in. This strong heating is due to an efficient coupling of the externally imposed large electric field to the plasma by ion fluctuations. We determine the anomalous collision frequency and the saturation fluctuation amplitudes as a function of the external field amplitude and frequency, and the electron-ion mass ratio. A simple nonlinear theory gives results in reasonable agreement with simulations. 24 refs., 10 figs

  1. Subharmonic frequency locking in the resistive Josephson thermometer

    International Nuclear Information System (INIS)

    van Veldhuizen, M.; Fowler, H.A.

    1985-01-01

    Phase-locked oscillatory solutions are examined as a basis for the dc impedance of the resistive superconducting quantum-interference device Josephson thermometer. The calculations are based on the resistively shunted junction model in the limit 2πL/sub s/I/sub c//Phi 0 > or =1, where L/sub s/ is the loop inductance and I/sub c/ is the junction critical current, and for a junction resistance large compared with the external shunt resistance. An algorithm for representing frequency entrainment in (kappa,ω) space (drive amplitude, frequency) leads to zones with rotation number p/q having the form of leaf-shaped regions joined and overlapping at their tips. High-resonance zones are very thin and locally similar. No chaotic behavior has been observed. The model can simulate the ''rising'' curves of dc impedance as a function of drive amplitude

  2. Study of submelt laser induced junction nonuniformities using Therma-Probe

    DEFF Research Database (Denmark)

    Rosseel, E.; Bogdanowicz, J; Clarysse, T.

    2010-01-01

    to standard and micro-four-point probe sheet resistance data, secondary ion mass spectrometry, and Hall measurements obtained during earlier studies. Besides the impact of the nonuniformities on the “conventional” thermal wave signal, they found a strong correlation to the dc reflectance of the probe laser...... both at macroscopic and microscopic levels. In this work, the authors present high resolution Therma-Probe® measurements to assess the junction nonuniformity on 0.5 keV boron junctions and zoom in on the effect of temperature variations and multiple subsequent laser scans. The results are compared...... (lambda = 675 nm). The dc probe reflectance is dominated by free carriers and is highly correlated to the sheet resistance both on blanket wafers and on real device wafers. ©2010 American Vacuum Society...

  3. RNAi validation of resistance genes and their interactions in the highly DDT-resistant 91-R strain of Drosophila melanogaster.

    Science.gov (United States)

    Gellatly, Kyle J; Yoon, Kyong Sup; Doherty, Jeffery J; Sun, Weilin; Pittendrigh, Barry R; Clark, J Marshall

    2015-06-01

    4,4'-dichlorodiphenyltrichloroethane (DDT) has been re-recommended by the World Health Organization for malaria mosquito control. Previous DDT use has resulted in resistance, and with continued use resistance will increase in terms of level and extent. Drosophila melanogaster is a model dipteran that has many available genetic tools, numerous studies done on insecticide resistance mechanisms, and is related to malaria mosquitoes allowing for extrapolation. The 91-R strain of D. melanogaster is highly resistant to DDT (>1500-fold), however, there is no mechanistic scheme that accounts for this level of resistance. Recently, reduced penetration, increased detoxification, and direct excretion have been identified as resistance mechanisms in the 91-R strain. Their interactions, however, remain unclear. Use of UAS-RNAi transgenic lines of D. melanogaster allowed for the targeted knockdown of genes putatively involved in DDT resistance and has validated the role of several cuticular proteins (Cyp4g1 and Lcp1), cytochrome P450 monooxygenases (Cyp6g1 and Cyp12d1), and ATP binding cassette transporters (Mdr50, Mdr65, and Mrp1) involved in DDT resistance. Further, increased sensitivity to DDT in the 91-R strain after intra-abdominal dsRNA injection for Mdr50, Mdr65, and Mrp1 was determined by a DDT contact bioassay, directly implicating these genes in DDT efflux and resistance. Copyright © 2015 Elsevier Inc. All rights reserved.

  4. Electron optics with ballistic graphene junctions

    Science.gov (United States)

    Chen, Shaowen

    Electrons transmitted across a ballistic semiconductor junction undergo refraction, analogous to light rays across an optical boundary. A pn junction theoretically provides the equivalent of a negative index medium, enabling novel electron optics such as negative refraction and perfect (Veselago) lensing. In graphene, the linear dispersion and zero-gap bandstructure admit highly transparent pn junctions by simple electrostatic gating, which cannot be achieved in conventional semiconductors. Robust demonstration of these effects, however, has not been forthcoming. Here we employ transverse magnetic focusing to probe propagation across an electrostatically defined graphene junction. We find perfect agreement with the predicted Snell's law for electrons, including observation of both positive and negative refraction. Resonant transmission across the pn junction provides a direct measurement of the angle dependent transmission coefficient, and we demonstrate good agreement with theory. Comparing experimental data with simulation reveals the crucial role played by the effective junction width, providing guidance for future device design. Efforts toward sharper pn junction and possibility of zero field Veselago lensing will also be discussed. This work is supported by the Semiconductor Research Corporations NRI Center for Institute for Nanoelectronics Discovery and Exploration (INDEX).

  5. Sputter fabricated Nb-oxide-Nb josephson junctions incorporating post-oxidation noble metal layers

    International Nuclear Information System (INIS)

    Bain, R.J.P.; Donaldson, G.B.

    1985-01-01

    We present an extension, involving other metals, of the work of Hawkins and Clarke, who found that a thin layer of copper prevented the formation of the superconductive shorts which are an inevitable consequence of sputtering niobium counter-electrodes directly on top of niobium oxide. We find gold to be the most satisfactory, and that 0.3 nm is sufficient to guarantee short-free junctions of excellent electrical and mechanical stability, though high excess conductance means they are best suited to shunted-junction applications, as in SQUIDs. We present results for critical current dependence on oxide thickness and on gold thickness. Our data shows that thermal oxide growth is described by the Cabrera-Mott mechanism. We show that the protective effect of the gold layer can be understood in terms of the electro-chemistry of the Nb-oxide-Au structure, and that the reduced quasi-particle resistance of the junctions relative to goldfree junctions with evaporated counterelectrodes can be explained in terms of barrier shape modification, and not by proximity effect mechanisms. The performance of a DC SQUID based on these junctions is described

  6. Iron-niobium-aluminum alloy having high-temperature corrosion resistance

    Science.gov (United States)

    Hsu, Huey S.

    1988-04-14

    An alloy for use in high temperature sulfur and oxygen containing environments, having aluminum for oxygen resistance, niobium for sulfur resistance and the balance iron, is discussed. 4 figs., 2 tabs.

  7. Image charge effects in single-molecule junctions: Breaking of symmetries and negative-differential resistance in a benzene single-electron transistor

    DEFF Research Database (Denmark)

    Kaasbjerg, Kristen; Flensberg, K.

    2011-01-01

    and molecular symmetries remain unclear. Using a theoretical framework developed for semiconductor-nanostructure-based single-electron transistors (SETs), we demonstrate that the image charge interaction breaks the molecular symmetries in a benzene-based single-molecule transistor operating in the Coulomb...... blockade regime. This results in the appearance of a so-called blocking state, which gives rise to negative-differential resistance (NDR). We show that the appearance of NDR and its magnitude in the symmetry-broken benzene SET depends in a complicated way on the interplay between the many-body matrix...

  8. Resistance Exercise Attenuates High-Fructose, High-Fat-Induced Postprandial Lipemia

    OpenAIRE

    Jessie R. Wilburn; Jeffrey Bourquin; Andrea Wysong; Christopher L. Melby

    2015-01-01

    Introduction Meals rich in both fructose and fat are commonly consumed by many Americans, especially young men, which can produce a significant postprandial lipemic response. Increasing evidence suggests that aerobic exercise can attenuate the postprandial increase in plasma triacylglycerols (TAGs) in response to a high-fat or a high-fructose meal. However, it is unknown if resistance exercise can dampen the postprandial lipemic response to a meal rich in both fructose and fat. Methods Eight ...

  9. High temperature resistive phase transition in A15 high temperature superconductors

    International Nuclear Information System (INIS)

    Chu, C.W.; Huang, C.Y.; Schmidt, P.H.; Sugawara, K.

    1976-01-01

    Resistive measurements were made on A15 high temperature superconductors. Anomalies indicative of a phase transition were observed at 433 0 K in a single crystal Nb 3 Sn and at 485 0 K in an unbacked Nb 3 Ge sputtered thin film. Results are compared with the high temperature transmission electron diffraction studies of Nb 3 Ge films by Schmidt et al. A possible instability in the electron energy spectrum is discussed

  10. Development of high electrical resistance persistent current switch for high speed energization system

    International Nuclear Information System (INIS)

    Jizo, Y.; Furuta, Y.; Nakashima, H.

    1986-01-01

    Japanese National Railways is now developing a superconducting magnetically-levitated train system. A persistent current switch is incorporated in the super-conducting magnet used in the magnetically-levitated train. In recent years, the switch has been required to have higher electrical resistance during its off-state in order to realize the high speed energization/de-energization system of the superconducting magnets. The system aims to decrease evaporation volume of liquid helium during the energization/de-energization of the magnet, by means of energizing the superconducting magnet with high current increasing/decreasing rate. Consequently, it would be possible to decrease the dependence of the on-board magnet system upon the ground cooling system. Through the development of a stable superconductive wire material and a coil structure for the persistent current switch using many small model switches which were produced in order to improve their current carrying capacities, the authors have succeeded in manufacturing the high electrical resistance persistent current switch whose electrical resistance was 5 ohms. The switch, of cylindrical shape, has a diameter of about 100mm, a length of about 100mm. These 5 ohm PCSs are now functioning in stable conditions being incorporated in the superconducting magnets of No.2 vehicle of MLU001 at the JNR's Miyazaki test track. Further, the authors are now developing the PCS of still higher resistance values, such as 50 ohms, through studies for stabilization in structural aspects of the winding and obtaining results therefrom

  11. Stability of High Temperature Standard Platinum Resistance Thermometers at High Temperatures

    Directory of Open Access Journals (Sweden)

    Y. A. ABDELAZIZ

    2010-05-01

    Full Text Available An investigation of the stability of high temperature standard platinum resistance thermometers HTSPRTs has been carried out for two different designs thermometers (with nominal resistance 0.25 Ω and 2.5 Ω from two different suppliers. The thermometers were heated for more than 160 hours at temperatures above 960 0C using a vertical furnace with a ceramic block. A study was made of the influence of the heat treatment on the stability of the resistance at the triple point of water, and on the relative resistance W(Ga at the melting point of gallium. The thermometers showed a correlation between the drift note and the values of W(Ga. It was found also that the HTSPRT which has a sensor with strip shaped support and low nominal resistance is more stable than the HTSPRT which has a sensor in the form of a coil wound on silica cross. The 0.25 Ω thermometer has better stability @ 7x10-6 0C (at TPW after 40 hour. Factors affecting the stability and accuracy of HTSPRT also will be discussed.

  12. Smooth Interfacial Scavenging for Resistive Switching Oxide via the Formation of Highly Uniform Layers of Amorphous TaOx.

    Science.gov (United States)

    Tsurumaki-Fukuchi, Atsushi; Nakagawa, Ryosuke; Arita, Masashi; Takahashi, Yasuo

    2018-02-14

    We demonstrate that the inclusion of a Ta interfacial layer is a remarkably effective strategy for forming interfacial oxygen defects at metal/oxide junctions. The insertion of an interfacial layer of a reactive metal, that is, a "scavenging" layer, has been recently proposed as a way to create a high concentration of oxygen defects at an interface in redox-based resistive switching devices, and growing interest has been given to the underlying mechanism. Through structural and chemical analyses of Pt/metal/SrTiO 3 /Pt structures, we reveal that the rate and amount of oxygen scavenging are not directly determined by the formation free energies in the oxidation reactions of the scavenging metal and unveil the important roles of oxygen diffusibility. Active oxygen scavenging and highly uniform oxidation via scavenging are revealed for a Ta interfacial layer with high oxygen diffusibility. In addition, the Ta scavenging layer is shown to exhibit a highly uniform structure and to form a very flat interface with SrTiO 3 , which are advantageous for the fabrication of a steep metal/oxide contact.

  13. Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

    Energy Technology Data Exchange (ETDEWEB)

    Nguyen, N.D., E-mail: Duy.Nguyen@imec.b [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Rosseel, E. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Takeuchi, S. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Physics and Astronomy, KU Leuven, B-3001 Leuven (Belgium); Everaert, J.-L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Yang, L. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Department of Chemistry and INPAC Institute, KU Leuven, B-3001 Leuven (Belgium); Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Zaima, S. [Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Nagoya, 464-8603 (Japan); Sakai, A. [Department of System Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531 (Japan); Loo, R. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Lin, J.C. [TSMC, R and D, 8, Li-Hsin 6th Rd., Hsinchu Science-Based Park, Hsinchu, Taiwan (China); TSMC assignee at IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Vandervorst, W. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium); Instituut voor Kern- en Stralingsfysika - IKS, KU Leuven, B-3001 Leuven (Belgium); Caymax, M. [IMEC, Kapeldreef 75, B-3001 Leuven (Belgium)

    2010-01-01

    We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 {sup o}C, we measured an active dopant concentration of about 2.1 x 10{sup 20} cm{sup -} {sup 3} and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10{sup 13} cm{sup -} {sup 2}) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

  14. Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology

    International Nuclear Information System (INIS)

    Nguyen, N.D.; Rosseel, E.; Takeuchi, S.; Everaert, J.-L.; Yang, L.; Goossens, J.; Moussa, A.; Clarysse, T.; Richard, O.; Bender, H.; Zaima, S.; Sakai, A.; Loo, R.; Lin, J.C.; Vandervorst, W.; Caymax, M.

    2010-01-01

    We evaluated the combination of vapor phase doping and sub-melt laser anneal as a novel doping strategy for the fabrication of source and drain extension junctions in sub-32 nm CMOS technology, aiming at both planar and non-planar device applications. High quality ultra shallow junctions with abrupt profiles in Si substrates were demonstrated on 300 mm Si substrates. The excellent results obtained for the sheet resistance and the junction depth with boron allowed us to fulfill the requirements for the 32 nm as well as for the 22 nm technology nodes in the PMOS case by choosing appropriate laser anneal conditions. For instance, using 3 laser scans at 1300 o C, we measured an active dopant concentration of about 2.1 x 10 20 cm - 3 and a junction depth of 12 nm. With arsenic for NMOS, ultra shallow junctions were achieved as well. However, as also seen for other junction fabrication schemes, low dopant activation level and active dose (in the range of 1-4 x 10 13 cm - 2 ) were observed although dopant concentration versus depth profiles indicate that the dopant atoms were properly driven into the substrate during the anneal step. The electrical deactivation of a large part of the in-diffused dopants was responsible for the high sheet resistance values.

  15. Clostridium difficile Infection and Patient-Specific Antimicrobial Resistance Testing Reveals a High Metronidazole Resistance Rate.

    Science.gov (United States)

    Barkin, Jodie A; Sussman, Daniel A; Fifadara, Nimita; Barkin, Jamie S

    2017-04-01

    Clostridium difficile (CD) infection (CDI) causes marked morbidity and mortality, accounting for large healthcare expenditures annually. Current CDI treatment guidelines focus on clinical markers of patient severity to determine the preferred antibiotic regimen of metronidazole versus vancomycin. The antimicrobial resistance patterns for patients with CD are currently unknown. The aim of this study was to define the antimicrobial resistance patterns for CD. This study included all patients with stools sent for CD testing to a private laboratory (DRG Laboratory, Alpharetta, Georgia) in a 6-month period from across the USA. Patient data was de-identified, with only age, gender, and zip-code available per laboratory protocol. All samples underwent PCR testing followed by hybridization for CD toxin regions A and B. Only patients with CD-positive PCR were analyzed. Antimicrobial resistance testing using stool genomic DNA evaluated presence of imidazole- and vancomycin-resistant genes using multiplex PCR gene detection. Of 2743, 288 (10.5%) stool samples were positive for CD. Six were excluded per protocol. Of 282, 193 (69.4%) were women, and average age was 49.4 ± 18.7 years. Of 282, 62 were PCR positive for toxins A and B, 160 for toxin A positive alone, and 60 for toxin B positive alone. Antimicrobial resistance testing revealed 134/282 (47.5%) patients resistant to imidazole, 17 (6.1%) resistant to vancomycin, and 9 (3.2%) resistant to imidazole and vancomycin. CD-positive patients with presence of imidazole-resistant genes from stool DNA extract was a common phenomenon, while vancomycin resistance was uncommon. Similar to treatment of other infections, antimicrobial resistance testing should play a role in CDI clinical decision-making algorithms to enable more expedited and cost-effective delivery of patient care.

  16. Phase-dependent noise in Josephson junctions

    Science.gov (United States)

    Sheldon, Forrest; Peotta, Sebastiano; Di Ventra, Massimiliano

    2018-03-01

    In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character that should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to both a previously noted phase-dependent thermal noise, and an undescribed non-stationary, phase-dependent dynamic noise. As experiments are approaching ranges in which these effects may be observed, we examine the form and magnitude of these processes. Their phase dependence can be realized experimentally as a hysteresis effect and may be used to probe defects present in JJ based qubits and in other superconducting electronics applications.

  17. Primary Tunnel Junction Thermometry

    International Nuclear Information System (INIS)

    Pekola, Jukka P.; Holmqvist, Tommy; Meschke, Matthias

    2008-01-01

    We describe the concept and experimental demonstration of primary thermometry based on a four-probe measurement of a single tunnel junction embedded within four arrays of junctions. We show that in this configuration random sample specific and environment-related errors can be avoided. This method relates temperature directly to Boltzmann constant, which will form the basis of the definition of temperature and realization of official temperature scales in the future

  18. High Ni austenite stainless steel resistant to neutron irradiation degradation

    International Nuclear Information System (INIS)

    Yonezawa, Toshio; Iwamura, Toshihiko; Kanasaki, Hiroshi; Fujimoto, Koji; Nakata, Shizuo; Ajiki, Kazuhide; Nakamura, Mitsuhiro.

    1997-01-01

    The composition of the stainless steel of the present invention comprises from 0.005 to 0.08% of C, up to 3% of Mn, up to 0.2% of Si+P+S, from 25 to 40% of Ni, from 25 to 40% of Cr, up to 3% of Mo, up to 0.3% of Nb+Ta, up to 0.3% of Ti, up to 0.001% of B and the balance of Fe. A solid solubilization treatment at a temperature of from 1,000 to 1,150degC is applied to the stainless steel having the composition. The stainless steel is excellent in stress corrosion cracking-resistance at a working circumstance of a LWR type reactor (high temperature and high pressure water at from 270 to 350degC/from 70 to 160 atm even after undergoing neutron irradiation of about 1 x 10 22 n/cm 2 (E>1 MeV) which is a maximum neutron irradiation amount undergone till the final stage of the working life of the LWR-type reactor. In addition, the average thermal expansion coefficient at from room temperature to 400degC ranges from 15x10 -6 - 19x10 -6 /K. (I.N.)

  19. Numerical description of creep of highly creep resistant alloys

    International Nuclear Information System (INIS)

    Preussler, T.

    1991-01-01

    Fatigue tests have been performed with a series of highly creep resistant materials for gas turbines and related applications for gaining better creep data up to long-term behaviour. The investigations were performed with selected individual materials in the area of the main applications down to strains and stresses relevant to design, and have attained trial durations of 25000 to 60000 h. In continuing former research, creep equations for a selection of characterizing individual materials have been improved and partly newly developed on the basis of a differentiated evaluation. Concerning the single materials, there are: one melt each of the materials IN-738 LC, IN-939, IN-100, FSX-414 and Inconel 617. The applied differentiated evaluation is based on the elastoplastical behaviour from the hot-drawing test, the creep behaviour from the non interrupted or the interrupted fatigue test, and the contraction behaviour from the annealing test. The creep equations developed describe the high temperature deformation behaviour taking into account primary, secondary and partly the tertiary creep dependent of temperature, stress and time. These equations are valid for the whole application area of the respective material. (orig./MM) [de

  20. House Dust Mite Der p 1 Effects on Sinonasal Epithelial Tight Junctions

    Science.gov (United States)

    Henriquez, Oswaldo A.; Beste, Kyle Den; Hoddeson, Elizabeth K.; Parkos, Charles A.; Nusrat, Asma; Wise, Sarah K.

    2013-01-01

    Background Epithelial permeability is highly dependent upon the integrity of tight junctions, cell-cell adhesion complexes located at the apical aspect of the lateral membrane of polarized epithelial cells. We hypothesize that sinonasal epithelial exposure to Der p 1 house dust mite antigen decreases expression of tight junction proteins (TJPs), representing a potential mechanism for increased permeability and presentation of antigens across the sinonasal epithelial layer. Methods Confluent cultured primary human sinonasal epithelial cells were exposed to recombinant Der p 1 antigen versus control, and transepithelial resistance measurements were performed over 24 hours. Antibody staining for a panel of tight junction proteins was examined with immunofluorescence/confocal microscopy and Western blotting. Tissue for these experiments was obtained from 4 patients total. Results Der p 1 exposed sinonasal cells showed a marked decrease in transepithelial resistance when compared to control cells. In addition, results of Western immunoblot and immunofluorescent labeling demonstrated decreased expression of TJPs claudin-1 and junction adhesion molecule-A (JAM-A) in Der p 1 exposed cultured sinonasal cells versus controls. Conclusion Der p 1 antigen exposure decreases sinonasal epithelium TJP expression, most notably seen in JAM-A and claudin-1 in these preliminary experiments. This decreased TJP expression likely contributes to increased epithelial permeability and represents a potential mechanism for transepithelial antigen exposure in allergic rhinitis. PMID:23592402

  1. Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

    Science.gov (United States)

    Vabbina, PhaniKiran; Choudhary, Nitin; Chowdhury, Al-Amin; Sinha, Raju; Karabiyik, Mustafa; Das, Santanu; Choi, Wonbong; Pala, Nezih

    2015-07-22

    Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

  2. Characteristics of spring wheat genotypes exhibiting high resistance to FHB in terms of their resistance to other fungal diseases

    Directory of Open Access Journals (Sweden)

    Danuta Kurasiak-Popowska

    2016-09-01

    Full Text Available The field experiment was carried out in 2010–2012 at the Dłoń Agricultural Research Station, the Poznań University of Life Sciences, Poland. The study was designed to evaluate the degree of infection by powdery mildew, brown rust, and septoria leaf blotch in 61 spring wheat genotypes differing in their resistance to Fusarium ssp. The vast majority of spring wheat genotypes in the collection of gene resources in the USA defined as resistant to Fusarium ssp. confirmed their resistance under Polish climatic conditions. The B .graminis infection rate of genotypes that are considered to be resistant to Fusarium head blight was high. The resistance ranged from 7 for Sumai 3 (PL2 up to 8.8 for Ning 8331 (in a 9-point scale. Most of the genotypes (56.5% were infected by Puccinia recondita at a level of 1–3 (in a 9-point scale. The genotypes of Sumai 3 exhibited high resistance to septoria leaf blotch, amounting to 1–2 in a 9-point scale; the resistance of Frontana ranged from 1 to 3.5, while the genotypes of Ning were infected by Mycosphaerella graminicola at 5–6.

  3. Chirality effect in disordered graphene ribbon junctions

    International Nuclear Information System (INIS)

    Long Wen

    2012-01-01

    We investigate the influence of edge chirality on the electronic transport in clean or disordered graphene ribbon junctions. By using the tight-binding model and the Landauer-Büttiker formalism, the junction conductance is obtained. In the clean sample, the zero-magnetic-field junction conductance is strongly chirality-dependent in both unipolar and bipolar ribbons, whereas the high-magnetic-field conductance is either chirality-independent in the unipolar or chirality-dependent in the bipolar ribbon. Furthermore, we study the disordered sample in the presence of magnetic field and find that the junction conductance is always chirality-insensitive for both unipolar and bipolar ribbons with adequate disorders. In addition, the disorder-induced conductance plateaus can exist in all chiral bipolar ribbons provided the disorder strength is moderate. These results suggest that we can neglect the effect of edge chirality in fabricating electronic devices based on the magnetotransport in a disordered graphene ribbon. (paper)

  4. Infrared detection with high-[Tc] bolometers and response of Nb tunnel junctions to picosecond voltage pulses

    Energy Technology Data Exchange (ETDEWEB)

    Verghese, S.

    1993-05-01

    Oxide superconductors with high critical temperature [Tc] make sensitive thermometers for several types of infrared bolometers. The authors built composite bolometers with YBa[sub 2]Cu[sub 3]O[sub 7[minus][delta

  5. Oxidation resistance of nickel alloys at high temperature

    International Nuclear Information System (INIS)

    Tyuvin, Yu.D.; Rogel'berg, I.L.; Ryabkina, M.M.; Plakushchaya, A.F.

    1977-01-01

    The heat resistance properties of nickel alloys Ni-Cr-Si, Ni-Si-Al, Ni-Si-Mn and Ni-Al-Mn have been studied by the weight method during oxidation in air at 1000 deg and 1200 deg C. It is demonstrated that manganese reduces the heat resistance properties of Ni-Si and Ni-Al alloys, whilst the addition of over 3% aluminium enhances the heat resistance properties of Ni-Si (over 1.5%) alloys. The maximum heat resistance properties are shown by Ni-Si-Al and Ni-Cr-Si alloys with over 2% Si. These alloys offer 3 to 4 times better oxidation resistance as compared with pure nickel at 1000 deg C and 10 times at 1200 deg C

  6. Corrosion resistance testing of high-boron-content stainless steels

    International Nuclear Information System (INIS)

    Petrman, I.; Safek, V.

    1994-01-01

    Boron steels, i.e. stainless steels with boron contents of 0.2 to 2.25 wt.%, are employed in nuclear engineering for the manufacture of baskets or wells in which radioactive fissile materials are stored, mostly spent nuclear fuel elements. The resistance of such steels to intergranular corrosion and uniform corrosion was examined in the Strauss solution and in boric acid; the dependence of the corrosion rate of the steels on their chemical composition was investigated, and their resistance was compared with that of AISI 304 type steel. Corrosion resistance tests in actual conditions of ''wet'' compact storage (demineralized water or a weak boric acid solution) gave evidence that boron steels undergo nearly no uniform corrosion and, as electrochemical measurements indicated, match standard corrosion-resistant steels. Corrosion resistance was confirmed to decrease slightly with increasing boron content and to increase somewhat with increasing molybdenum content. (Z.S.). 3 tabs., 4 figs., 7 refs

  7. A double EPSPS gene mutation endowing glyphosate resistance shows a remarkably high resistance cost.

    Science.gov (United States)

    Han, Heping; Vila-Aiub, Martin M; Jalaludin, Adam; Yu, Qin; Powles, Stephen B

    2017-12-01

    A novel glyphosate resistance double point mutation (T102I/P106S, TIPS) in the 5-enolpyruvylshikimate-3-phosphate synthase (EPSPS) gene has been recently identified for the first time only in the weed species Eleusine indica. Quantification of plant resistance cost associated with the TIPS and the often reported glyphosate resistance single P106S mutation was performed. A significant resistance cost (50% in seed number currency) associated with the homozygous TIPS but not the homozygous P106S EPSPS variant was identified in E. indica plants. The resistance cost associated with the TIPS mutation escalated to 85% in plants under resource competition with rice crops. The resistance cost was not detected in nonhomozygous TIPS plants denoting the recessive nature of the cost associated with the TIPS allele. An excess of 11-fold more shikimate and sixfold more quinate in the shikimate pathway was detected in TIPS plants in the absence of glyphosate treatment compared to wild type, whereas no changes in these compounds were observed in P106S plants when compared to wild type. TIPS plants show altered metabolite levels in several other metabolic pathways that may account for the expression of the observed resistance cost. © 2017 John Wiley & Sons Ltd.

  8. Theory of the low-voltage impedance of superconductor-- p insulator--normal metal tunnel junctions

    International Nuclear Information System (INIS)

    Lemberger, T.R.

    1984-01-01

    A theory for the low-voltage impedance of a superconductor-- p insulator--normal metal tunnel junction is developed that includes the effects of charge imbalance and of quasiparticle fluctuations. A novel, inelastic, charge-imbalance relaxation process is identified that is associated with the junction itself. This new process leads to the surprising result that the charge-imbalance component of the dc resistance of a junction becomes independent of the electron-phonon scattering rate as the insulator resistance decreases

  9. High prevalence of multi-drug resistant Klebsiella pneumoniae in a ...

    African Journals Online (AJOL)

    The lowest resistance rates were documented for Carbapenems (23.2%). For specific antibiotics, there was high resistance to commonly used antibiotics (over 80% for Ceftriaxone, Cefipime, Gentamycin and Ceftazidime). The antibiotics with least resistance were Amikacin and Meropenem (21% and 7 % respectively).

  10. High Velocity Oxidation and Hot Corrosion Resistance of Some ODS Alloys

    Science.gov (United States)

    Lowell, C. E.; Deadmore, D. L.

    1977-01-01

    Several oxide dispersion strengthened (ODS) alloys were tested for cyclic, high velocity, oxidation, and hot corrosion resistance. These results were compared to the resistance of an advanced, NiCrAl coated superalloy. An ODS FeCrAl were identified as having sufficient oxidation and hot corrosion resistance to allow potential use in an aircraft gas turbine without coating.

  11. Tailoring Cytotoxicity of Antimicrobial Peptidomimetics with High Activity against Multidrug-Resistant Escherichia coli

    DEFF Research Database (Denmark)

    Jahnsen, Rasmus D; Sandberg-Schaal, Anne; Vissing, Karina Juul

    2014-01-01

    Infections with multidrug-resistant pathogens are an increasing concern for public health. Recently, subtypes of peptide-peptoid hybrids were demonstrated to display potent activity against multidrug-resistant Gram-negative bacteria. Here, structural variation of these antibacterial peptidomimetics...... cells. Thus, lead compounds with a high selectivity toward killing of clinically important multidrug-resistant E. coli were identified....

  12. Pressure Resistance Welding of High Temperature Metallic Materials

    International Nuclear Information System (INIS)

    Jerred, N.; Zirker, L.; Charit, I.; Cole, J.; Frary, M.; Butt, D.; Meyer, M.; Murty, K.L.

    2010-01-01

    Pressure Resistance Welding (PRW) is a solid state joining process used for various high temperature metallic materials (Oxide dispersion strengthened alloys of MA957, MA754; martensitic alloy HT-9, tungsten etc.) for advanced nuclear reactor applications. A new PRW machine has been installed at the Center for Advanced Energy Studies (CAES) in Idaho Falls for conducting joining research for nuclear applications. The key emphasis has been on understanding processing-microstructure-property relationships. Initial studies have shown that sound joints can be made between dissimilar materials such as MA957 alloy cladding tubes and HT-9 end plugs, and MA754 and HT-9 coupons. Limited burst testing of MA957/HT-9 joints carried out at various pressures up to 400 C has shown encouraging results in that the joint regions do not develop any cracking. Similar joint strength observations have also been made by performing simple bend tests. Detailed microstructural studies using SEM/EBSD tools and fatigue crack growth studies of MA754/HT-9 joints are ongoing.

  13. Impaired bolus clearance in combined high-resolution esophageal manometry and impedance measurement helps to differentiate between esophagogastric junction outflow obstruction and achalasia.

    Science.gov (United States)

    Zizer, Eugen; Seufferlein, Thomas; Hänle, Mark Martin

    2017-02-01

    Introduction and aims  High-resolution esophageal manometry (HRM) has improved the diagnostic work-up of esophageal motility disorders. Simultaneous evaluation of bolus clearance delivers useful information about the function of tubular esophagus. We assessed bolus clearance in a combined HRM-impedance examination for esophagogastric junction outflow obstruction (EGJOO) in comparison to achalasia patients. The collected data were assessed in a retrospective analysis. Patients and methods  After gastroscopy excluded a mechanical esophageal or gastric obstruction, 142 consecutive patients underwent combined HRM-impedance examination. The assessment and interpretation of the manometry results were done according to the Chicago Classification of esophageal motility disorders v3.0. After classifying the motility disorder, the evaluation of bolus clearance was done according to published studies. Results  All patients with achalasia (n = 24) showed a significantly impaired bolus clearance (achalasia cases. This might be helpful as an additional tool to differentiate between achalasia and EGJOO patients. Furthermore, the role of the combined impedance-HRM investigation for early diagnosis of achalasia in "pre-achalasia" condition or in evaluation of potential progress of EGJOO to achalasia should be evaluated in a prospective study. © Georg Thieme Verlag KG Stuttgart · New York.

  14. High resistance (up to 1014 ohms) measurement using RC networks

    International Nuclear Information System (INIS)

    Florescu, Valeriu

    2008-01-01

    An application of dynamic measuring techniques of resistances from 10 6 to 10 14 ohms is described. The method has been analyzed with an eye to measuring accuracy, other influences of the actual measuring circuit also being considered. In conclusion, an automatic measuring method with A/D conversion, automatic range selection, and digital output in semilogarithmic form is outlined. It has been experimentally verified that the dynamic method of resistance measurement can be used for testing insulation resistance of materials and resistors. The great advantage of the automatic measuring circuit is that, apart from an easy automatic selection of the measuring range, digital output in semilogarithmic form ensures compatibility with digital computer systems and facilitates the grading in resistor manufacture. The time required for measuring resistances of the known order of magnitude does not exceed 1 s. Automatic selection of the order of magnitude speeds up the measurement of unknown resistances. For resistance measurement over the range of 10 6 to 10 14 ohms, the measuring accuracy of 1 to 2% is usually sufficient. The meter can be designed as an inexpensive attachment to a conventional counter. The principle of integration measurement avoids undesirable interference effects with which the conventional measuring methods are afflicted. Since the measuring voltage can be adjusted continuously, even the voltage dependence of resistance can be measured

  15. High-Tc superconducting Josephson mixers for terahertz heterodyne detection

    International Nuclear Information System (INIS)

    Malnou, M.; Feuillet-Palma, C.; Olanier, L.; Lesueur, J.; Bergeal, N.; Ulysse, C.; Faini, G.; Febvre, P.; Sirena, M.

    2014-01-01

    We report on an experimental and theoretical study of the high-frequency mixing properties of ion-irradiated YBa 2 Cu 3 O 7 Josephson junctions embedded in THz antennas. We investigated the influence of the local oscillator power and frequency on the device performances. The experimental data are compared with theoretical predictions of the general three-port model for mixers in which the junction is described by the resistively shunted junction model. A good agreement is obtained for the conversion efficiency in different frequency ranges, spanning above and below the characteristic frequencies f c of the junctions

  16. Characterization of marine bacteria highly resistant to mercury exhibiting multiple resistances to toxic chemicals

    Digital Repository Service at National Institute of Oceanography (India)

    De, J.; Ramaiah, N.

    , GP15 and GP16) and one Pseudomonas aeruginosa (CH07) which showed comparatively higher resistance to toxic heavy metals and xenobiotics and were used in more detailed experiments. Antibiotic sensitivity of all three isolates after plasmid curing... using Nucleospin Plasmid isolation kit (Macherey Nagel, Germany) and agarose gel electrophoresis. To further confirm the presence/absence of plasmid, two different plasmid curing assays were performed to note the loss, if any, of mercury resistance...

  17. Resistive wall mode stabilization in slowly rotating high beta plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Reimerdes, H [Columbia University, New York, NY 10027 (United States); Garofalo, A M [Columbia University, New York, NY 10027 (United States); Okabayashi, M [Princeton Plasma Physics Laboratory, Princeton, NJ 08543-0451 (United States); Strait, E J [General Atomics, San Diego, CA 92186-5608 (United States); Betti, R [University of Rochester, Rochester, NY 14627 (United States); Chu, M S [General Atomics, San Diego, CA 92186-5608 (United States); Hu, B [University of Rochester, Rochester, NY 14627 (United States); In, Y [FAR-TECH, Inc., San Diego, CA 92121 (United States); Jackson, G L [General Atomics, San Diego, CA 92186-5608 (United States); La Haye, R J [General Atomics, San Diego, CA 92186-5608 (United States); Lanctot, M J [Columbia University, New York, NY 10027 (United States); Liu, Y Q [Chalmers University of Technology, S-412 96 Goeteborg (Sweden); Navratil, G A [Columbia University, New York, NY 10027 (United States); Solomon, W M [Princeton Plasma Physics Laboratory, Princeton, NJ 08543-0451 (United States); Takahashi, H [Princeton Plasma Physics Laboratory, Princeton, NJ 08543-0451 (United States); Groebner, R J [General Atomics, San Diego, CA 92186-5608 (United States)

    2007-12-15

    DIII-D experiments show that the resistive wall mode (RWM) can remain stable in high {beta} scenarios despite a low net torque from nearly balanced neutral beam injection heating. The minimization of magnetic field asymmetries is essential for operation at the resulting low plasma rotation of less than 20 krad s{sup -1} (measured with charge exchange recombination spectroscopy using C VI emission) corresponding to less than 1% of the Alfven velocity or less than 10% of the ion thermal velocity. In the presence of n = 1 field asymmetries the rotation required for stability is significantly higher and depends on the torque input and momentum confinement, which suggests that a loss of torque-balance can lead to an effective rotation threshold above the linear RWM stability threshold. Without an externally applied field the measured rotation can be too low to neglect the diamagnetic rotation. A comparison of the instability onset in plasmas rotating with and against the direction of the plasma current indicates the importance of the toroidal flow driven by the radial electric field in the stabilization process. Observed rotation thresholds are compared with predictions for the semi-kinetic damping model, which generally underestimates the rotation required for stability. A more detailed modeling of kinetic damping including diamagnetic and precession drift frequencies can lead to stability without plasma rotation. However, even with corrected error fields and fast plasma rotation, plasma generated perturbations, such as edge localized modes, can nonlinearly destabilize the RWM. In these cases feedback control can increase the damping of the magnetic perturbation and is effective in extending the duration of high {beta} discharges.

  18. Limitations of the dual voltage clamp method in assaying conductance and kinetics of gap junction channels

    NARCIS (Netherlands)

    Wilders, R.; Jongsma, H. J.

    1992-01-01

    The electrical properties of gap junctions in cell pairs are usually studied by means of the dual voltage clamp method. The voltage across the junctional channels, however, cannot be controlled adequately due to an artificial resistance and a natural resistance, both connected in series with the gap

  19. Incidence of high-level gentamicin resistance in enterococci at ...

    African Journals Online (AJOL)

    gentamicin resistance (HLGR) in enterococcal isolates at. Johannesburg Hospital. Design. Survey of laboratory isolates. Setting. Academic hospitals. Bacterial strains. Consecutive samples of enterococcaf isolates. ... that for severe infections, particularly endocarditis and meningitis, bactericidal antimicrobial therapy is ...

  20. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    Energy Technology Data Exchange (ETDEWEB)

    Radamson, H.H. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)], E-mail: rad@kth.se; Kolahdouz, M.; Ghandi, R.; Ostling, M. [School of Information and Communication Technology, KTH (Royal Institute of Technology) Isafjordsg. 22-26, Electrum 229, 16640 Kista (Sweden)

    2008-12-05

    This work presents the selective epitaxial growth (SEG) of Si{sub 1-x}Ge{sub x} (x = 0.15-0.315) layers with high amount of boron (1 x 10{sup 20}-1 x 10{sup 21} cm{sup -3}) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers.

  1. High strain amount in recessed junctions induced by selectively deposited boron-doped SiGe layers

    International Nuclear Information System (INIS)

    Radamson, H.H.; Kolahdouz, M.; Ghandi, R.; Ostling, M.

    2008-01-01

    This work presents the selective epitaxial growth (SEG) of Si 1-x Ge x (x = 0.15-0.315) layers with high amount of boron (1 x 10 20 -1 x 10 21 cm -3 ) in recessed or unprocessed (elevated) openings for source/drain applications in CMOS has been studied. The influence of the growth rate and strain on boron incorporation has been studied. A focus has been made on the strain distribution and boron incorporation in SEG of SiGe layers

  2. Development of Thin Film Amorphous Silicon Tandem Junction Based Photocathodes Providing High Open-Circuit Voltages for Hydrogen Production

    Directory of Open Access Journals (Sweden)

    F. Urbain

    2014-01-01

    Full Text Available Hydrogenated amorphous silicon thin film tandem solar cells (a-Si:H/a-Si:H have been developed with focus on high open-circuit voltages for the direct application as photocathodes in photoelectrochemical water splitting devices. By temperature variation during deposition of the intrinsic a-Si:H absorber layers the band gap energy of a-Si:H absorber layers, correlating with the hydrogen content of the material, can be adjusted and combined in a way that a-Si:H/a-Si:H tandem solar cells provide open-circuit voltages up to 1.87 V. The applicability of the tandem solar cells as photocathodes was investigated in a photoelectrochemical cell (PEC measurement set-up. With platinum as a catalyst, the a-Si:H/a-Si:H based photocathodes exhibit a high photocurrent onset potential of 1.76 V versus the reversible hydrogen electrode (RHE and a photocurrent of 5.3 mA/cm2 at 0 V versus RHE (under halogen lamp illumination. Our results provide evidence that a direct application of thin film silicon based photocathodes fulfills the main thermodynamic requirements to generate hydrogen. Furthermore, the presented approach may provide an efficient and low-cost route to solar hydrogen production.

  3. Resistance Exercise Attenuates High-Fructose, High-Fat-Induced Postprandial Lipemia

    Directory of Open Access Journals (Sweden)

    Jessie R. Wilburn

    2015-01-01

    Full Text Available Introduction Meals rich in both fructose and fat are commonly consumed by many Americans, especially young men, which can produce a significant postprandial lipemic response. Increasing evidence suggests that aerobic exercise can attenuate the postprandial increase in plasma triacylglycerols (TAGs in response to a high-fat or a high-fructose meal. However, it is unknown if resistance exercise can dampen the postprandial lipemic response to a meal rich in both fructose and fat. Methods Eight apparently healthy men (Mean ± SEM; age = 27 ± 2 years participated in a crossover study to examine the effects of acute resistance exercise on next-day postprandial lipemia resulting from a high-fructose, high-fat meal. Participants completed three separate two-day conditions in a random order: (1 EX-COMP: a full-body weightlifting workout with the provision of additional kilocalories to compensate for the estimated net energy cost of exercise on day 1, followed by the consumption of a high-fructose, high-fat liquid test meal the next morning (day 2 (~600 kcal and the determination of the plasma glucose, lactate, insulin, and TAG responses during a six-hour postprandial period; (2 EX-DEF: same condition as EX-COMP but without exercise energy compensation on day 1; and (3 CON: no exercise control. Results The six-hour postprandial plasma insulin and lactate responses did not differ between conditions. However, the postprandial plasma TAG concentrations were 16.5% and 24.4% lower for EX-COMP (551.0 ± 80.5 mg/dL x 360 minutes and EX-DEF (499.4 ± 73.5 mg/dL x 360 minutes, respectively, compared to CON (660.2 ± 95.0 mg/dL x 360 minutes ( P < 0.05. Conclusions A single resistance exercise bout, performed ~15 hours prior to a high-fructose, high-fat meal, attenuated the postprandial TAG response, as compared to a no-exercise control condition, in healthy, resistance-trained men.

  4. Resistance Exercise Attenuates High-Fructose, High-Fat-Induced Postprandial Lipemia.

    Science.gov (United States)

    Wilburn, Jessie R; Bourquin, Jeffrey; Wysong, Andrea; Melby, Christopher L

    2015-01-01

    Meals rich in both fructose and fat are commonly consumed by many Americans, especially young men, which can produce a significant postprandial lipemic response. Increasing evidence suggests that aerobic exercise can attenuate the postprandial increase in plasma triacylglycerols (TAGs) in response to a high-fat or a high-fructose meal. However, it is unknown if resistance exercise can dampen the postprandial lipemic response to a meal rich in both fructose and fat. Eight apparently healthy men (Mean ± SEM; age = 27 ± 2 years) participated in a crossover study to examine the effects of acute resistance exercise on next-day postprandial lipemia resulting from a high-fructose, high-fat meal. Participants completed three separate two-day conditions in a random order: (1) EX-COMP: a full-body weightlifting workout with the provision of additional kilocalories to compensate for the estimated net energy cost of exercise on day 1, followed by the consumption of a high-fructose, high-fat liquid test meal the next morning (day 2) (~600 kcal) and the determination of the plasma glucose, lactate, insulin, and TAG responses during a six-hour postprandial period; (2) EX-DEF: same condition as EX-COMP but without exercise energy compensation on day 1; and (3) CON: no exercise control. The six-hour postprandial plasma insulin and lactate responses did not differ between conditions. However, the postprandial plasma TAG concentrations were 16.5% and 24.4% lower for EX-COMP (551.0 ± 80.5 mg/dL × 360 minutes) and EX-DEF (499.4 ± 73.5 mg/dL × 360 minutes), respectively, compared to CON (660.2 ± 95.0 mg/dL × 360 minutes) (P < 0.05). A single resistance exercise bout, performed ~15 hours prior to a high-fructose, high-fat meal, attenuated the postprandial TAG response, as compared to a no-exercise control condition, in healthy, resistance-trained men.

  5. Some chaotic features of intrinsically coupled Josephson junctions

    International Nuclear Information System (INIS)

    Kolahchi, M.R.; Shukrinov, Yu.M.; Hamdipour, M.; Botha, A.E.; Suzuki, M.

    2013-01-01

    Highlights: ► Intrinsically coupled Josephson junctions model a high-T c superconductor. ► Intrinsically coupled Josephson junctions can act as a chaotic nonlinear system. ► Chaos could be due to resonance overlap. ► Avoiding parameters that lead to chaos is important for the design of resonators. -- Abstract: We look for chaos in an intrinsically coupled system of Josephson junctions. This study has direct applications for the high-T c resonators which require coherence amongst the junctions

  6. Outcomes of exertional rhabdomyolysis following high-intensity resistance training.

    Science.gov (United States)

    Huynh, A; Leong, K; Jones, N; Crump, N; Russell, D; Anderson, M; Steinfort, D; Johnson, D F

    2016-05-01

    High-intensity resistance training (HIRT) programmes are increasingly popular amongst personal trainers and those attending gymnasiums. We report the experience of exertional rhabdomyolysis (ER) at two tertiary hospitals in Melbourne, Australia. To compare the clinical outcomes of ER with other causes of rhabdomyolysis. Retrospective cross-sectional study of patients presenting with a serum creatine kinase (CK) of greater than 25 000 units/L from 1 September 2013 to 31 August 2014 at two tertiary referral hospitals in Melbourne, Australia. Records were examined to identify care measures implemented during hospital stay, clinical outcomes during admission and on subsequent follow up. Thirty four cases of rhabdomyolysis with a CK of greater than 25 000 units/L (normal range: 20-180 units/L) were identified during the 12-month study period. Twelve of the 34 cases (35%) had ER with 10 of 12 related to HIRT. No acute kidney injury, intensive care admission or death were seen among those with ER. All cases were managed conservatively, with 11 admitted and 9 receiving intravenous fluids only. In contrast, patients with rhabdomyolysis from other causes experienced significantly higher rates of intensive care admission (64%, P = 0.0002), acute kidney injury (82%, P = 0.0001) and death (27%, P = 0.069). ER resulting from HIRT appears to have a benign course compared with rhabdomyolysis of other aetiologies in patients with a serum CK greater than 25 000 units/L. Conservative management of ER appears to be adequate, although this requires confirmation in future prospective studies. © 2016 Royal Australasian College of Physicians.

  7. Four-junction superconducting circuit

    Science.gov (United States)

    Qiu, Yueyin; Xiong, Wei; He, Xiao-Ling; Li, Tie-Fu; You, J. Q.

    2016-01-01

    We develop a theory for the quantum circuit consisting of a superconducting loop interrupted by four Josephson junctions and pierced by a magnetic flux (either static or time-dependent). In addition to the similarity with the typical three-junction flux qubit in the double-well regime, we demonstrate the difference of the four-junction circuit from its three-junction analogue, including its advantages over the latter. Moreover, the four-junction circuit in the single-well regime is also investigated. Our theory provides a tool to explore the physical properties of this four-junction superconducting circuit. PMID:27356619

  8. Two-dimensional dopant profiling for shallow junctions by TEM and AFM

    International Nuclear Information System (INIS)

    Yoo, K.

    2000-01-01

    The present work concerns the development of the Etch/TEM and Etch/AFM methods to obtain quantitative 2-D dopant profiles for the ultra shallow p-n junctions of the next generation of metal-oxide-semiconductor field effect transistors (MOSFETs). For these methods, thin foil (TEM) or bulk (AFM) cross-sectional specimens were etched using a dopant selective chemical so that local areas of the dopant implanted source/drain (S/D) regions were etched to different depths. The surface topography of the S/D regions was determined from the thickness fringes for the TEM method and by the direct measurement for the AFM method. The local etched depths were converted to etch rates, and these were then converted to corresponding 1-D and 2-D dopant profiles by the experimentally independent etch rate calibration curves. Shallow junction MOSFET samples were designed and fabricated with junction depths 60nm (n + /p), 80nm (n + /p) and 120nm (p + /n) using 0.25μm process technology. A new method using SOG (Spin-on-Glass) contributed to the high quality XTEM thin foil specimens. Controlled stirring of the etchant increased the dopant concentration selectivity and etching consistency. Computer modelling simulated the isotropic etching behaviours, which can introduce the significant error in dopant profiling for shallow and abrupt junction samples. Comprehensive quantitative results enabled the optimum etching time to be determined for the first time. Etch/TEM method gave 1-D dopant profiles that showed good agreement with 1-D Spreading Resistance Probe (SRP) dopant profiles for determining junction depths. 2-D dopant profiles gave L eff , i.e. the shortest lateral distance between the S/D junctions, of major importance for MOSFET performance. Values for L eff of 161, 159 and 123nm were determined from 60, 80 and 120nm junction depth samples respectively, compared with the 215nm MOSFET gate length. The resolution and accuracy of the Etch/TEM method are estimated as 2 and 10nm

  9. Giant magneto-resistance devices

    CERN Document Server

    Hirota, Eiichi; Inomata, Koichiro

    2002-01-01

    This book deals with the application of giant magneto-resistance (GMR) effects to electronic devices. It will appeal to engineers and graduate students in the fields of electronic devices and materials. The main subjects are magnetic sensors with high resolution and magnetic read heads with high sensitivity, required for hard-disk drives with recording densities of several gigabytes. Another important subject is novel magnetic random-access memories (MRAM) with non-volatile non-destructive and radiation-resistant characteristics. Other topics include future GMR devices based on bipolar spin transistors, spin field-effect transistors (FETs) and double-tunnel junctions.

  10. Dynamics of the Josephson multi-junction system with junctions characterized by non-sinusoidal current - phase relationship

    International Nuclear Information System (INIS)

    Abal'osheva, I.; Lewandowski, S.J.

    2004-01-01

    It is shown that the inclusion of junctions characterized by non-sinusoidal current - phase relationship in the systems composed of multiple Josephson junctions - results in the appearance of additional system phase states. Numerical simulations and stability considerations confirm that those phase states can be realized in practice. Moreover, spontaneous formation of the grain boundary junctions in high-T c superconductors with non-trivial current-phase relations due to the d-wave symmetry of the order parameter is probable. Switching between the phase states of multiple grain boundary junction systems can lead to additional 1/f noise in high-T c superconductors. (author)

  11. Relative Roles of Gap Junction Channels and Cytoplasm in Cell-to-Cell Diffusion of Fluorescent Tracers

    Science.gov (United States)

    Safranyos, Richard G. A.; Caveney, Stanley; Miller, James G.; Petersen, Nils O.

    1987-04-01

    Intercellular (tissue) diffusion of molecules requires cytoplasmic diffusion and diffusion through gap junctional (or cell-to-cell) channels. The rates of tissue and cytoplasmic diffusion of fluorescent tracers, expressed as an effective diffusion coefficient, De, and a cytoplasmic diffusion coefficient, Dcyt, have been measured among the developing epidermal cells of a larval beetle, Tenebrio molitor L., to determine the contribution of the junctional channels to intercellular diffusion. Tracer diffusion was measured by injecting fluorescent tracers into cells and quantitating the rate of subsequent spread into adjacent cells. Cytoplasmic diffusion was determined by fluorescence photobleaching. These experiments show that gap junctional channels constitute approximately 70-80% of the total cell-to-cell resistance to the diffusion of organic tracers at high concentrations in this tissue. At low concentrations, however, the binding of tracer to cytoplasm slows down the cytoplasmic diffusion, which may limit intercellular diffusion.

  12. High Rate of Resistance to Quinupristin-Dalfopristin in Enterococcus faecium Clinical Isolates from Korea

    Science.gov (United States)

    Oh, Won Sup; Ko, Kwan Soo; Song, Jae-Hoon; Lee, Mi Young; Park, Sulhee; Peck, Kyong Ran; Lee, Nam Yong; Kim, Choon-Kwan; Lee, Hyuck; Kim, Shin-Woo; Chang, Hyun-Ha; Kim, Yeon-Sook; Jung, Sook-In; Son, Jun Seong; Yeom, Joon-Sup; Ki, Hyun Kyun; Woo, Gun-Jo

    2005-01-01

    We tested the in vitro susceptibilities of 603 enterococcal isolates from eight tertiary-care hospitals in Korea. The quinupristin-dalfopristin resistance rate in Enterococcus faecium was very high (25 isolates, 10.0%). It was suggested that both clonal spread and the sporadic emergence of quinupristin-dalfopristin-resistant isolates may explain the high prevalence of quinupristin-dalfopristin resistance in Korea. PMID:16304198

  13. Breeding of new variety Yangfumai 4 with high resistance to wheat yellow mosaic disease

    International Nuclear Information System (INIS)

    He Zhentian; Chen Xiulan; Zhang Rong; Wang Jianhua; Wang Jinrong; Liu Jian

    2011-01-01

    To control the infection of wheat yellow mosaic disease,new wheat variety with high-yield, disease-resistant was selected. Ningmai 9, which carries yellow mosaic disease resistant genes, was used as original material. Combination of conventional breeding technique and radiation methods, a new wheat variety Yangfumai 4 was developed during 1996-2007, and registered in 2008. The new wheat variety with high yield and resistance to yellow mosaic disease is suitable to plant in the Yangtze River region. (authors)

  14. Evaluation of pavement skid resistance using high speed texture measurement

    Directory of Open Access Journals (Sweden)

    Jay N. Meegoda

    2015-12-01

    Full Text Available Skid resistance is an important parameter for highway designs, construction, management, maintenance and safety. The purpose of this manuscript is to propose the correlation between skid resistance, which is measured as skid resistance trailer, and mean profile depth (MPD or the macro surface texture, which is measured by vehicle mounted laser, so that highway agencies can predict the skid resistance of pavement without the use of expensive and time consuming skid resistance trailer, which also causes disruption of traffic in use. In this research skid numbers and MPD from 5 new asphalt pavements and 4 old asphalt pavements were collected using a locked wheel skid trailer and a vehicle mounted laser. Using the data collected, a correlation between the skid number (SN40R collected by locked wheel skid tester and the texture data or MPD collected by a vehicle mounted laser operating at highway speeds was developed. The proposed correlation for new pavements was positive for MPD values less than 0.75 mm to reach a peak SN40R value, then there was a negative correlation as the MPD increases until the MPD value was equal to 1.1 mm and beyond the MPD value of 1.1 mm to the maximum value of 1.4 mm, SN40R value remained almost constant. There were significant data scatter for the MPD value of 0.8 mm. To explain these results, water film thickness during the friction test was calculated and the critical MPD was defined. The effect of sealed water pool on the SN40R was discussed. The test result showed a similar trend for older asphalt pavements, but with lower SN40R values due to the polishing of pavement micro-texture by traffic. Hence, a reduction factor was proposed for older pavements based on cumulative traffic volume for the above correlation to predict the skid resistance of older pavements.

  15. pn junctions based on a single transparent perovskite semiconductor BaSnO3

    Science.gov (United States)

    Kim, Hoon Min; Kim, Useong; Park, Chulkwon; Kwon, Hyukwoo; Lee, Woongjae; Kim, Tai Hoon; Kim, Kee Hoon; Char, Kookrin; Mdpl, Department Of Physics; Astronomy Team; Censcmr, Department Of Physics; Astronomy Team

    2014-03-01

    Successful p doping of transparent oxide semiconductor will further increase its potential, especially in the area of optoelectronic applications. We will report our efforts to dope the BaSnO3 (BSO) with K by pulsed laser deposition. Although the K doped BSO exhibits rather high resistivity at room temperature, its conductivity increases dramatically at higher temperatures. Furthermore, the conductivity decreases when a small amount of oxygen was removed from the film, consistent with the behavior of p type doped oxides. We have fabricated pn junctions by using K doped BSO as a p type and La doped BSO as an n type material. I_V characteristics of these devices show the typical rectifying behavior of pn junctions. We will present the analysis of the junction properties from the temperature dependent measurement of their electrical properties, which shows that the I_V characteristics are consistent with the material parameters such as the carrier concentration, the mobility, and the bandgap. Our demonstration of pn junctions based on a single transparent perovskite semiconductor further enhances the potential of BSO system with high mobility and stability.

  16. High Thermal Conductivity and High Wear Resistance Tool Steels for cost-effective Hot Stamping Tools

    Science.gov (United States)

    Valls, I.; Hamasaiid, A.; Padré, A.

    2017-09-01

    In hot stamping/press hardening, in addition to its shaping function, the tool controls the cycle time, the quality of the stamped components through determining the cooling rate of the stamped blank, the production costs and the feasibility frontier for stamping a given component. During the stamping, heat is extracted from the stamped blank and transported through the tool to the cooling medium in the cooling lines. Hence, the tools’ thermal properties determine the cooling rate of the blank, the heat transport mechanism, stamping times and temperature distribution. The tool’s surface resistance to adhesive and abrasive wear is also an important cost factor, as it determines the tool durability and maintenance costs. Wear is influenced by many tool material parameters, such as the microstructure, composition, hardness level and distribution of strengthening phases, as well as the tool’s working temperature. A decade ago, Rovalma developed a hot work tool steel for hot stamping that features a thermal conductivity of more than double that of any conventional hot work tool steel. Since that time, many complimentary grades have been developed in order to provide tailored material solutions as a function of the production volume, degree of blank cooling and wear resistance requirements, tool geometries, tool manufacturing method, type and thickness of the blank material, etc. Recently, Rovalma has developed a new generation of high thermal conductivity, high wear resistance tool steel grades that enable the manufacture of cost effective tools for hot stamping to increase process productivity and reduce tool manufacturing costs and lead times. Both of these novel grades feature high wear resistance and high thermal conductivity to enhance tool durability and cut cycle times in the production process of hot stamped components. Furthermore, one of these new grades reduces tool manufacturing costs through low tool material cost and hardening through readily

  17. Preparation and characterization of a ferrimagnetic amorphous alloy of GdCo entering the design of magnetic tunnel junctions: ionizing radiations hardness of magnetic tunnel junctions; preparation et caracterisation d'un alliage amorphe ferrimagnetique de GdCo entrant dans la conception de jonctions tunnel magnetiques. Resistance des jonctions tunnel magnetiques aux rayonnements ionisants

    Energy Technology Data Exchange (ETDEWEB)

    Conraux, Y

    2005-10-15

    The magnetic random access memories (MRAM) are on the way to supplant the other forms of random access memories using the states of electric charge, and this thanks to their many technical advantages: not-volatility, speed, low consumption power, robustness. Also, the MRAM are alleged insensitive with the ionizing radiations, which was not checked in experiments until now. The current architecture of the MRAM is based on the use of magnetic tunnel junctions (MTJ). These MRAM can present an important disadvantage, because they are likely of present errors of addressing, in particular when integration (density of memory cells) is increasingly thorough. The work undertaken during this thesis relates to these two points: - to check the functional reliability of the MRAM containing JTM exposed to high energy ionizing radiations; - to study a ferrimagnetic amorphous alloy, GdCo, likely to enter the composition of JTM and allowing to free from the possible errors of addressing by a process of thermal inhibition of the memory cells. This work of thesis showed that the MRAM containing JTM preserve their functional properties fully when they are subjected to intense ionizing radiations, and that GdCo is a very interesting material from the point of view of the solid state physics and magnetism, that its physical properties are very promising as for its applications, and that its integration in a JTM still claims technological developments. (author)

  18. Resistance against Schistosoma mansoni induced by highly irradiated infections: studies on species specificity of immunization and attempts to transfer resistance

    International Nuclear Information System (INIS)

    Bickle, Q.D.; Andrews, B.J.; Doenhoff, M.J.; Ford, M.J.; Taylor, M.G.

    1985-01-01

    Significant levels of resistance against Schistosoma mansoni challenge were developed by mice exposed to highly irradiated (20 krad.) cercariae of the homologous species (53-67%), whereas vaccination with S. bovis, S. haematobium or S. japonicum failed to confer significant levels of resistance (-5-12%), thus confirming the specificity of the immunizing procedure. Attempts to transfer resistance to naive recipients by injection of serum and of spleen or lymph node cells from donor mice vaccinated with highly irradiated cercariae were largely unsuccessful. However, significant levels of resistance could be transferred to mice by injection of serum from rabbits exposed to irradiated cercariae. Comparable levels of resistance were conferred by injection of serum at the time of challenge (34-69%) or 5-6 days later (31-56%). In contrast, sera from rabbits injected with soluble egg antigen or homogenized cercariae failed to confer protection upon recipient mice. Sera from vaccinated mice, vaccinated rabbits and antigen-injected rabbits all caused cell adherence to skin-transformed schistosomula but neither the level of adherence nor the serum titre correlated with the ability to confer protection to mice. (author)

  19. Charge transport across metal/molecular (alkyl) monolayer-Si junctions is dominated by the LUMO level

    NARCIS (Netherlands)

    Yaffe, O.; Qi, Y.; Scheres, L.M.W.; Puniredd, S.R.; Segev, L.; Ely, T.; Haick, H.; Zuilhof, H.; Vilan, A.; Kronik, L.; Kahn, A.; Cahen, D.

    2012-01-01

    We compare the charge transport characteristics of heavy-doped p(++)- and n(++)-Si-alkyl chain/Hg junctions. Based on negative differential resistance in an analogous semiconductor-inorganic insulator/metal junction we suggest that for both p(++)- and n(++)-type junctions, the energy difference

  20. How useful is esophageal high resolution manometry in diagnosing gastroesophageal junction disruption: causes affecting this disruption and its relationship with manometric alterations and gastroesophageal reflux

    Directory of Open Access Journals (Sweden)

    Constanza Ciriza-de-los-Ríos

    2014-01-01

    Full Text Available Background: High-resolution manometry (HRM is a breakthrough in the morphological study of the gastroesophageal junction (GEJ and its degrees of disruption. Objectives: a Assessment of risk factors involved in the disruption of the GEJ in patients with gastroesophageal reflux (GER symptoms; b the relationship between the type of GEJ and GER demonstrated by 24 hours pH-monitoring; and c identification of the alterations in the manometric parameters related to the morphology of the GEJ. Methods: One hundred and fifteen patients with symptoms of GER studied with HRM and classified by the type of GEJ (type I: Normal; type II: Sliding; type III: Hiatal hernia. Twenty four hour pH-monitoring without proton pump inhibitors was performed in all of them. Epidemiological aspects, manometric parameters (Chicago 2012 classification and the pH-monitoring results were evaluated. Results: Age (OR 1.033 [1.006-1.060]; p = 0.16, BMI (OR 1.097 [1.022-1.176]; p = 0. 01 and abdominal perimeter (OR 1.034 [1.005-1.063]; p = 0.0215 were independent risk factors for the GEJ type III (area under the curve 0.70. Disruption of the GEJ was associated with a lower resting pressure (p = 0.006, greater length (p < 0.001 and greater esophageal shortening (p < 0.001. Abnormal acidic reflux was found in the total period (p = 0.015, standing (p = 0.022 and supine (p = 0.001 in patients with GEJ type II and III with respect to type I. Conclusions: Increased age, overweight and central obesity pose a higher risk of GEJ type III (hiatal hernia. The greater disruption of the GEJ is associated with lower resting pressure, esophageal shortening, and higher acid exposure in the pH-monitoring.

  1. Autism-relevant traits interact with temporoparietal junction stimulation effects on social cognition: a high-definition transcranial direct current stimulation and electroencephalography study.

    Science.gov (United States)

    Donaldson, Peter H; Kirkovski, Melissa; Rinehart, Nicole J; Enticott, Peter G

    2018-03-01

    The temporoparietal junction (TPJ) is implicated in mental and emotional state attribution, processes associated with autism-relevant traits. Transcranial direct current stimulation (tDCS) to the TPJ can influence social-cognitive performance. However, associations with electrophysiology and autism-relevant traits remain relatively unexamined. This study had two aims: first, exploring links between Autism-Spectrum Quotient (AQ) scores and social-cognitive performance; second, examining interactions between AQ scores and high-definition-tDCS (HD-tDCS) applied to the right TPJ in terms of mental/emotional state attribution and neurophysiological outcomes. Fifty-three participants completed mental/emotional state attribution tasks before and after HD-tDCS. Pre-stimulation mental state attribution accuracy was reduced in participants with higher AQ Switching scores. Cathodal stimulation was associated with reduced emotion attribution performance in participants with higher AQ Switching and AQ Social scores (the latter at trend-level). Anodal stimulation more frequently interacted with AQ Social scores in terms of neurophysiology, in particular regarding reduced delta power in the left compared to right TPJ, and trend-level positive interactions with P100 and P300 latencies during the emotion recognition task. Elements of attention/switching (AQ Switching) may subserve or underpin elements of social cognition (AQ Social), and cathodal and anodal stimulation may have differing effects depending on trait levels in these domains. This study makes an important and original contribution in terms of increasing understanding of how such trait-level variation might interact with the effects of tDCS and also extending previous studies with regard to understanding potential roles of the rTPJ in both attention and social cognition and how autism-relevant traits might influence TPJ function. © 2017 Federation of European Neuroscience Societies and John Wiley & Sons Ltd.

  2. Experimental study of liquid-immersion III–V multi-junction solar cells with dimethyl silicon oil under high concentrations

    International Nuclear Information System (INIS)

    Xin, Ganchao; Wang, Yiping; Sun, Yong; Huang, Qunwu; Zhu, Li

    2015-01-01

    Highlights: • Electrical performance of MJ solar cells immersed by silicon oil was studied under 500×. • Theoretical cell photocurrent losses caused by silicon oil absorption were estimated. • Cell performance changes operated in silicon oil (1.0–30.0 mm) were analyzed. • Critical silicon oil thickness on top of MJ solar cells was estimated to be 6.3 mm. - Abstract: In order to better apply direct liquid-immersion cooling (LIC) method in temperature control of solar cells in high concentrating photovoltaic (CPV) systems, electrical characteristics of GaInP/GaInAs/Ge triple-junction solar cells immersed in dimethyl silicon oil of 1.0–30.0 mm thickness were studied experimentally under 500 suns and 25 °C. Theoretical photocurrent losses caused by spectrum transmittance decrease from spectral absorption of silicon oil were estimated for three series sub-cells, and an in-depth analysis of the electrical performances changes of the operated cell in silicon oil was performed. Compared with cell performances without liquid-immersion, the conversion efficiency and the maximum output power of the immersed solar cell in silicon oil of 1.0 mm thickness has increased from 39.567% and 19.556 W to 40.572% and 20.083 W respectively. However, the cell electrical performances decrease with increasing silicon oil thickness in the range of 1.0–30.0 mm, and the efficiency and the maximum output power of the cell have become less than those without liquid-immersion when the silicon oil thickness exceeds 6.3 mm

  3. Electromagnetic waves in single- and multi-Josephson junctions

    International Nuclear Information System (INIS)

    Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

    2008-01-01

    The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

  4. High strength corrosion-resistant zirconium aluminum alloys

    International Nuclear Information System (INIS)

    Schulson, E.M.; Cameron, D.J.

    1976-01-01

    A zirconium-aluminum alloy is described possessing superior corrosion resistance and mechanical properties. This alloy, preferably 7.5-9.5 wt% aluminum, is cast, worked in the Zr(Al)-Zr 2 Al region, and annealed to a substantially continuous matrix of Zr 3 Al. (E.C.B.)

  5. Structural Characterization of Highly Corrosion-resistant Steel

    Czech Academy of Sciences Publication Activity Database

    Lančok, Adriana; Kmječ, T.; Štefánik, M.; Sklenka, L.; Miglierini, M.

    2015-01-01

    Roč. 88, č. 4 (2015), s. 355-361 ISSN 0011-1643 R&D Projects: GA ČR(CZ) GA14-12449S Institutional support: RVO:61388980 Keywords : Mossbauer spectroscopy * corrosion-resistant steel * LC200 * CEMS Subject RIV: CA - Inorganic Chemistry Impact factor: 0.732, year: 2015

  6. Metabolic responses to high protein diet in Korean elite bodybuilders with high-intensity resistance exercise

    Directory of Open Access Journals (Sweden)

    Choue Ryowon

    2011-07-01

    Full Text Available Abstract Background High protein diet has been known to cause metabolic acidosis, which is manifested by increased urinary excretion of nitrogen and calcium. Bodybuilders habitually consumed excessive dietary protein over the amounts recommended for them to promote muscle mass accretion. This study investigated the metabolic response to high protein consumption in the elite bodybuilders. Methods Eight elite Korean bodybuilders within the age from 18 to 25, mean age 21.5 ± 2.6. For data collection, anthropometry, blood and urinary analysis, and dietary assessment were conducted. Results They consumed large amounts of protein (4.3 ± 1.2 g/kg BW/day and calories (5,621.7 ± 1,354.7 kcal/day, as well as more than the recommended amounts of vitamins and minerals, including potassium and calcium. Serum creatinine (1.3 ± 0.1 mg/dl and potassium (5.9 ± 0.8 mmol/L, and urinary urea nitrogen (24.7 ± 9.5 mg/dl and creatinine (2.3 ± 0.7 mg/dl were observed to be higher than the normal reference ranges. Urinary calcium (0.3 ± 0.1 mg/dl, and phosphorus (1.3 ± 0.4 mg/dl were on the border of upper limit of the reference range and the urine pH was in normal range. Conclusions Increased urinary excretion of urea nitrogen and creatinine might be due to the high rates of protein metabolism that follow high protein intake and muscle turnover. The obvious evidence of metabolic acidosis in response to high protein diet in the subjects with high potassium intake and intensive resistance exercise were not shown in this study results. However, this study implied that resistance exercise with adequate mineral supplementation, such as potassium and calcium, could reduce or offset the negative effects of protein-generated metabolic changes. This study provides preliminary information of metabolic response to high protein intake in bodybuilders who engaged in high-intensity resistance exercise. Further studies will be needed to determine the effects of the intensity

  7. Simulations of signal amplification and oscillations using a SNS junction

    International Nuclear Information System (INIS)

    Luiz, A.M.; Soares, V.; Nicolsky, R.

    1998-01-01

    A superconducting - normal metal - superconducting junction (SNS junction) may exhibit a low voltage negative differential resistance (LVNDR) effect over part of its current voltage characteristic (CVC). As the LVNDR effect is stable against a bias voltage at this CVC range, it should be possible to combine a SNS junction with conventional electronic circuits to obtain electronic devices such as mixers, amplifiers and oscillators. Making use of this remarkable effect, we show that an amplifier may be feasible by assembling a simple voltage divider made up of a SNS junction in series with a resistor. The amplifier circuit includes an adjustable DC voltage supply (the bias voltage) and an AC signal source with a given voltage. The SNS junction is connected in series with a resistor R. Choosing values of the load resistance R approximately equal to the module of the negative differential resistance (dV/dI), at the bias voltage, we may obtain large gains in this amplifier device. In order to get an oscillator, the SNS junction should be connected to a RLC tank circuit with a bias voltage adjusted in the range of the LVNDR region of its CVC. A power output of the order of one microwatt may be easily obtained. (orig.)

  8. Quantum Junction Solar Cells

    KAUST Repository

    Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H.

    2012-01-01

    -performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising

  9. Exceptionally high cavitation erosion and corrosion resistance of a high entropy alloy.

    Science.gov (United States)

    Nair, R B; Arora, H S; Mukherjee, Sundeep; Singh, S; Singh, H; Grewal, H S

    2018-03-01

    Cavitation erosion and corrosion of structural materials are serious concerns for marine and offshore industries. Durability and performance of marine components are severely impaired due to degradation from erosion and corrosion. Utilization of advanced structural materials can play a vital role in limiting such degradation. High entropy alloys (HEAs) are a relatively new class of advanced structural materials with exceptional properties. In the present work, we report on the cavitation erosion behavior of Al 0.1 CoCrFeNi HEA in two different media: distilled water with and without 3.5wt% NaCl. For comparison, conventionally used stainless steel SS316L was also evaluated in identical test conditions. Despite lower hardness and yield strength, the HEA showed significantly longer incubation period and lower erosion-corrosion rate (nearly 1/4th) compared to SS316L steel. Enhanced erosion resistance of HEA was attributed to its high work-hardening behavior and stable passivation film on the surface. The Al 0.1 CoCrFeNi HEA showed lower corrosion current density, high pitting resistance and protection potential compared to SS316L steel. Further, HEA showed no evidence of intergranular corrosion likely due to the absence of secondary precipitates. Although, the degradation mechanisms (formation of pits and fatigue cracks) were similar for both the materials, the damage severity was found to be much higher for SS316L steel compared to HEA. Copyright © 2017 Elsevier B.V. All rights reserved.

  10. High-resolution and high-conductive electrode fabrication on a low thermal resistance flexible substrate

    International Nuclear Information System (INIS)

    Kang, Bongchul; Kno, Jinsung; Yang, Minyang

    2011-01-01

    Processes based on the liquid-state pattern transfer, like inkjet printing, have critical limitations including low resolution and low electrical conductivity when fabricating electrodes on low thermal resistance flexible substrates such as polyethylene terephthalate (PET). Those are due to the nonlinear transfer mechanism and the limit of the sintering temperature. Although the laser direct curing (LDC) of metallic inks is an alternative process to improve the resolution, it is also associated with the disadvantages of causing thermal damage to the polymer substrate. This paper suggests the laser induced pattern adhesion transfer method to fabricate electrodes of both high electrical conductivity and high resolution on a PET substrate. First, solid patterns are cost-effectively created by the LDC of the organometallic silver ink on a glass that is optically and thermally stable. The solid patterns sintered on the glass are transferred to the PET substrate by the photo-thermally generated adhesion force of the substrate. Therefore, we achieved electrodes with a minimum line width of 10 µm and a specific resistance of 3.6 μΩcm on the PET substrate. The patterns also showed high mechanical reliability

  11. High-resolution and high-conductive electrode fabrication on a low thermal resistance flexible substrate

    Science.gov (United States)

    Kang, Bongchul; Kno, Jinsung; Yang, Minyang

    2011-07-01

    Processes based on the liquid-state pattern transfer, like inkjet printing, have critical limitations including low resolution and low electrical conductivity when fabricating electrodes on low thermal resistance flexible substrates such as polyethylene terephthalate (PET). Those are due to the nonlinear transfer mechanism and the limit of the sintering temperature. Although the laser direct curing (LDC) of metallic inks is an alternative process to improve the resolution, it is also associated with the disadvantages of causing thermal damage to the polymer substrate. This paper suggests the laser induced pattern adhesion transfer method to fabricate electrodes of both high electrical conductivity and high resolution on a PET substrate. First, solid patterns are cost-effectively created by the LDC of the organometallic silver ink on a glass that is optically and thermally stable. The solid patterns sintered on the glass are transferred to the PET substrate by the photo-thermally generated adhesion force of the substrate. Therefore, we achieved electrodes with a minimum line width of 10 µm and a specific resistance of 3.6 μΩcm on the PET substrate. The patterns also showed high mechanical reliability.

  12. Flow of CO2 ethanol and of CO2 methanol in a non-adiabatic microfluidic T-junction at high pressures

    NARCIS (Netherlands)

    Blanch Ojea, R.; Tiggelaar, Roald M.; Pallares, J.; Grau, F.X.; Gardeniers, Johannes G.E.

    2012-01-01

    In this work, an experimental investigation of the single- and multiphase flows of two sets of fluids, CO2–ethanol and CO2–methanol, in a non-adiabatic microfluidic T-junction is presented. The operating conditions ranged from 7 to 18 MPa, and from 294 to 474 K. The feed mass fraction of CO2 in the

  13. Utilizing recycled LiFePO4 from batteries in combination with B@C3N4 and CuFe2O4 as sustainable nano-junctions for high performance degradation of atenolol.

    Science.gov (United States)

    Kumar, Amit; Kumari, Anu; Sharma, Gaurav; Naushad, Mu; Ahamad, Tansir; Stadler, Florian J

    2018-06-18

    In this report recycled LiFePO 4 (LFP) from exhaust batteries was utilized to form B@C 3 N 4 /LiFePO 4 /CuFe 2 O 4 (BLC) nano-junction as a visible active photocatalyst. The junction synthesized by two routes: Using as extracted LFP and forming LFP by extracted FePO 4 and Li 2 CO 3 via in-situ deposition method. The two ternary junctions BLC and BLC (E) (utilizing as extracted LFP) were utilized for visible and solar powered degradation of beta-blocker drug Atenolol (ATL). Varying the loading of CuFe 2 O 4 (CF) which possesses lowest band gap, BLC (10%), BLC-3 (30%), BLC-5 (50%) and BLC-E (30% CF and as extracted LFP) were produced with BLC-3 exhibiting remarkable activity. The optical band gaps of BLC-3 (2.40 eV) and BLC (E) (2.46 eV) and photocurrent responses reveal high visible absorption and highly diminished recombination. 99.5% and 85.3% of ATL (20 mg L -1 ) could be degraded by BLC-3 and BLC (E) (0.3 g L -1 ) respectively in 60 min of exposure to Xe lamp and retaining of high activity in natural sunlight. Band-junction analysis, effect of scavengers and effect on teraphthalic acid and nitroblue tetrazolium reveal O 2 - and OH radicals as active species and mineralization was confirmed by liquid chromatography-mass spectrometer (LC-MS). Cyto-toxicity studies on human peripheral blood cells and effect on growth of Pseudomonas aeruginosa confirm the complete mineralization. The BLC photocatalyst is a promising multi-functional catalyst utilizing LFP (rarely used as photocatalyst) for treatment of pharmaceutical waste water and other environmental applications. Copyright © 2018 Elsevier Ltd. All rights reserved.

  14. Spectrum of resonant plasma oscillations in long Josephson junctions

    International Nuclear Information System (INIS)

    Holst, T.

    1996-01-01

    An analysis is presented for the amplitude of the plasma oscillations in the zero-voltage state of a long and narrow Josephson tunnel junction. The calculation is valid for arbitrary normalized junction length and arbitrary bias current. The spectrum of the plasma resonance is found numerically as solutions to an analytical equation. The low-frequency part of the spectrum contains a single resonance, which is known to exist also in the limit of a short and narrow junction. Above a certain cutoff frequency, a series of high-frequency standing wave plasma resonances is excited, a special feature of long Josephson junctions. copyright 1996 The American Physical Society

  15. Primary drug resistance in a region with high burden of tuberculosis. A critical problem.

    Science.gov (United States)

    Villa-Rosas, Cecilia; Laniado-Laborín, Rafael; Oceguera-Palao, Lorena

    2015-01-01

    To determine rates of drug resistance in new cases of pulmonary tuberculosis in a region with a high burden of the disease. New case suspects were referred for drug susceptibility testing. 28.9% of new cases were resistant to at least one first line drug; 3.9% had a multidrug-resistant strain, 15.6% a monoresistant strain and 9.4% a polyresistant strain. Our rate of drug resistant tuberculosis in new cases is very high; this has important clinical implications, since even monoresistance can have a negative impact on the outcome of new cases treated empirically with a six month regimen.

  16. Josephson effect in SIFS junctions at arbitrary scattering

    International Nuclear Information System (INIS)

    Pugach, N. G.; Kupriyanov, M. Yu.; Goldobin, E.; Koelle, D.; Kleiner, R.

    2011-01-01

    Full text: The interplay between dirty and clean limits in Superconductor-Ferromagnet-Superconductor (SFS) Josephson junctions is a subject of intensive theoretical studies. SIFS junctions, containing an additional insulator (I) barrier are interesting as potential logic elements in superconducting circuits, since their critical current I c can be tuned over a wide range, still keeping a high I c R N product, where R N is the normal resistance of the junction. They are also a convenient model system for a comparative study of the 0-π transitions for arbitrary relations between characteristic lengths of the F-layer: the layer thickness d, the mean free path l, the magnetic length ξ H =v F /2H, and the nonmagnetic coherence length ξ 0 =v F /2πT, where v F is the Fermi velocity, H is the exchange magnetic energy, and T is the temperature. The spatial variations of the order parameter are described by the complex coherent length in the ferromagnet ξ F -1 = ξ 1 -1 + iξ 2 -1 . It is well known, that in the dirty limit (l 1,2 ) described by the Usadel equations both ξ 1 2 = ξ 2 2 = v F l/3H. In this work the spatial distribution of the anomalous Green's functions and the Josephson current in the SIFS junction are calculated. The linearized Eilenberger equations are solved together with the Zaitsev boundary conditions. This allows comparing the dirty and the clean limits, investigating a moderate disorder, and establishing the applicability limits of the Usadel equations for such structures. We demonstrate that for an arbitrary relation between l, ξ H , and d the spatial distribution of the anomalous Green's function can be approximated by a single exponent with reasonable accuracy, and we find its effective decay length and oscillation period for several values of ξ H , l and d. The role of different types of the FS interface is analyzed. The applicability range of the Usadel equation is established. The results of calculations have been applied to the

  17. Superconductive junctions for x-ray spectroscopy

    International Nuclear Information System (INIS)

    Grand, J.B. le; Bruijn, M.P.; Frericks, M.; Korte, P.A.J. de; Houwman, E.P.; Flokstra, J.

    1992-01-01

    Biasing of SIS-junctions for the purpose of high energy resolution x-ray detection is complicated by the presence of a DC Josephson current and AC Josephson current resonances, so that a large magnetic field is normally used for the suppression of these Josephson features. A transimpedance amplifier is proposed for biasing and signal amplification at low magnetic field. X-ray spectroscopy detectors for astronomy require a high detection efficiency in the 0.5-10 keV energy band and a reasonable (∼1 cm 2 ) detector area. Calculations on absorber-junctions combinations which might meet these requirements are presented. (author) 9 refs.; 10 figs

  18. Theoretical and experimental investigations on synchronization in many-junction arrays of HTSC Josephson junctions. Final report

    International Nuclear Information System (INIS)

    Seidel, P.; Heinz, E.; Pfuch, A.; Machalett, F.; Krech, W.; Basler, M.

    1996-06-01

    Different many-junction arrays of Josephson junctions were studied theoretically to analyse the mechanisms of synchronization, the influence of internal and external parameters and the maximal allowed spread of parameters for the single junctions. Concepts to realize arrays using standard high-T c superconductor technology were created, e.g. the new arrangement of multijunction superconducting loops (MSL). First experimental results show the relevance of this concept. Intrinsic one-dimensional arrays in thin film technology were prepared as mesas out of Bi or Tl 2212 films. to characterize HTSC Josephson junctions methods based on the analysis of microwave-induced steps were developed. (orig.) [de

  19. Development of High Temperature/High Sensitivity Novel Chemical Resistive Sensor

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Chunrui [Univ. of Texas, San Antonio, TX (United States); Enriquez, Erik [Univ. of Texas, San Antonio, TX (United States); Wang, Haibing [Univ. of Texas, San Antonio, TX (United States); Xu, Xing [Univ. of Texas, San Antonio, TX (United States); Bao, Shangyong [Univ. of Texas, San Antonio, TX (United States); Collins, Gregory [Univ. of Texas, San Antonio, TX (United States)

    2013-08-13

    The research has been focused to design, fabricate, and develop high temperature/high sensitivity novel multifunctional chemical sensors for the selective detection of fossil energy gases used in power and fuel systems. By systematically studying the physical properties of the LnBaCo2O5+d (LBCO) [Ln=Pr or La] thin-films, a new concept chemical sensor based high temperature chemical resistant change has been developed for the application for the next generation highly efficient and near zero emission power generation technologies. We also discovered that the superfast chemical dynamic behavior and an ultrafast surface exchange kinetics in the highly epitaxial LBCO thin films. Furthermore, our research indicates that hydrogen can superfast diffuse in the ordered oxygen vacancy structures in the highly epitaxial LBCO thin films, which suggest that the LBCO thin film not only can be an excellent candidate for the fabrication of high temperature ultra sensitive chemical sensors and control systems for power and fuel monitoring systems, but also can be an excellent candidate for the low temperature solid oxide fuel cell anode and cathode materials.

  20. Effect of some structural parameters on high-temperature crack resistance of tungsten

    International Nuclear Information System (INIS)

    Babak, A.V.; Uskov, E.I.

    1984-01-01

    The paper presents results of physicomechanical studied in high-temperature crack resistance of tungsten produced by powder metallurgy methods. It is shown that at high temperatures (>2000 deg C) a structure is formed in the material and fails at stresses independent of temperature. It is found that high-temperature tungsten crack resistance is affected neighter by changes in the effictive grain size, nor by appearance of grain-boundary microcraks in the material under high-temperature action

  1. Charge transport in single photochromic molecular junctions

    Science.gov (United States)

    Kim, Youngsang; Pietsch, T.; Scheer, Elke; Hellmuth, T.; Pauly, F.; Sysoiev, D.; Huhn, T.; Exner, T.; Groth, U.; Steiner, U.; Erbe, A.

    2012-02-01

    Recently, photoswitchable molecules, i.e. diarylethene, gained significant interest due to their applicability in data storage media, as optical switches, and in novel logic circuits [1]. Diarylethene-derivative molecules are the most promising candidates to design electronic functional elements, because of their excellent thermal stability, high fatigue resistance, and negligible change upon switching [1]. Here, we present the preferential conductance of specifically designed sulfur-free diarylethene molecules [2] bridging the mechanically controlled break-junctions at low temperatures [3]. The molecular energy levels and electrode couplings are obtained by evaluating the current-voltage characteristics using the single-level model [4]. The charge transport mechanism of different types of diarylethene molecules is investigated, and the results are discussed within the framework of novel theoretical predictions. [4pt] [1] M. Del Valle etal., Nat Nanotechnol 2, 176 (2007) S. J. van der Molen etal., Nano. Lett. 9, 76 (2009).[0pt] [2] D. Sysoiev etal., Chem. Eur. J. 17, 6663 (2011).[0pt] [3] Y. Kim etal., Phys. Rev. Lett. 106, 196804 (2011).[0pt] [4] Y. Kim etal., Nano Lett. 11, 3734 (2011). L. Zotti etal., Small 6, 1529 (2010).

  2. NbN Josephson and Tunnel Junctions for Space THz Observation and Signal Processing

    National Research Council Canada - National Science Library

    Setzu, Romano; Hadacek, Nicolas; Larrey, Vincent; Beaudin, Gerard; Villegier, Jean-Claude

    2005-01-01

    ... (superconductor-normal metal-superconductor) self-shunted junctions are preferred. We present the advantages of the nitride junction technology currently developed at CEA-Grenoble, based on high-performance MTS...

  3. Diagnostic Evasion of Highly-Resistant Microorganisms: A Critical Factor in Nosocomial Outbreaks.

    Science.gov (United States)

    Zhou, Xuewei; Friedrich, Alexander W; Bathoorn, Erik

    2017-01-01

    Highly resistant microorganisms (HRMOs) may evade screening strategies used in routine diagnostics. Bacteria that have evolved to evade diagnostic tests may have a selective advantage in the nosocomial environment. Evasion of resistance detection can result from the following mechanisms: low-level expression of resistance genes not resulting in detectable resistance, slow growing variants, mimicry of wild-type-resistance, and resistance mechanisms that are only detected if induced by antibiotic pressure. We reviewed reports on hospital outbreaks in the Netherlands over the past 5 years. Remarkably, many outbreaks including major nation-wide outbreaks were caused by microorganisms able to evade resistance detection by diagnostic screening tests. We describe various examples of diagnostic evasion by several HRMOs and discuss this in a broad and international perspective. The epidemiology of hospital-associated bacteria may strongly be affected by diagnostic screening strategies. This may result in an increasing reservoir of resistance genes in hospital populations that is unnoticed. The resistance elements may horizontally transfer to hosts with systems for high-level expression, resulting in a clinically significant resistance problem. We advise to communicate the identification of HRMOs that evade diagnostics within national and regional networks. Such signaling networks may prevent inter-hospital outbreaks, and allow collaborative development of adapted diagnostic tests.

  4. Tokamaks with high-performance resistive magnets: advanced test reactors and prospects for commercial applications

    International Nuclear Information System (INIS)

    Bromberg, L.; Cohn, D.R.; Williams, J.E.C.; Becker, H.; Leclaire, R.; Yang, T.

    1981-10-01

    Scoping studies have been made of tokamak reactors with high performance resistive magnets which maximize advantages gained from high field operation and reduced shielding requirements, and minimize resistive power requirements. High field operation can provide very high values of fusion power density and n tau/sub e/ while the resistive power losses can be kept relatively small. Relatively high values of Q' = Fusion Power/Magnet Resistive Power can be obtained. The use of high field also facilitates operation in the DD-DT advanced fuel mode. The general engineering and operational features of machines with high performance magnets are discussed. Illustrative parameters are given for advanced test reactors and for possible commercial reactors. Commercial applications that are discussed are the production of fissile fuel, electricity generation with and without fissioning blankets and synthetic fuel production

  5. Parallel Evolution of High-Level Aminoglycoside Resistance in Escherichia coli Under Low and High Mutation Supply Rates

    Directory of Open Access Journals (Sweden)

    Claudia Ibacache-Quiroga

    2018-03-01

    Full Text Available Antibiotic resistance is a major concern in public health worldwide, thus there is much interest in characterizing the mutational pathways through which susceptible bacteria evolve resistance. Here we use experimental evolution to explore the mutational pathways toward aminoglycoside resistance, using gentamicin as a model, under low and high mutation supply rates. Our results show that both normo and hypermutable strains of Escherichia coli are able to develop resistance to drug dosages > 1,000-fold higher than the minimal inhibitory concentration for their ancestors. Interestingly, such level of resistance was often associated with changes in susceptibility to other antibiotics, most prominently with increased resistance to fosfomycin. Whole-genome sequencing revealed that all resistant derivatives presented diverse mutations in five common genetic elements: fhuA, fusA and the atpIBEFHAGDC, cyoABCDE, and potABCD operons. Despite the large number of mutations acquired, hypermutable strains did not pay, apparently, fitness cost. In contrast to recent studies, we found that the mutation supply rate mainly affected the speed (tempo but not the pattern (mode of evolution: both backgrounds acquired the mutations in the same order, although the hypermutator strain did it faster. This observation is compatible with the adaptive landscape for high-level gentamicin resistance being relatively smooth, with few local maxima; which might be a common feature among antibiotics for which resistance involves multiple loci.

  6. Output pulse-shapes of position-sensitive proportional counters using high resistance single wire

    International Nuclear Information System (INIS)

    Iwatani, Kazuo; Nishiyama, Fumitaka; Hasai, Hiromi

    1980-01-01

    The measurements and model analysis of the output pulse-shapes from a single wire proportional counter (SWPC) which has a high resistance anode are described. The characteristics of the observed pulse-shapes are determined by only one parameter which is a function of anode resistance and load resistance and they are reproduced by a simple model. Using this model, the methods for position read-out are discussed in a systematical way. (author)

  7. The high temperature resistivity of Ba2YCu3O7-chi

    International Nuclear Information System (INIS)

    Xingkui, Z.; Shining, Z.; Hao, W.; Shiyuan, Z.; Ningshen, Z.; Ziran, X.

    1988-01-01

    The high temperature resistivity (rho), thermogravimetry (TG) and derivative thermogravimetric (DTG) have been used to characterize superconductor Ba 2 YCu 3 O 7-chi (BYCO) in O 2 , air and N 2 . The resistivity is linear from room temperature at 350 0 C and then deviate from linearity with oxygen evolution, the derivative of resistivity drho/dT increases abruptly near orthorhombic to tetragonal phase transition. These phenomena can give good explanations for a two-band Drude model

  8. The High Temperature Resistivity of Ba2YCu3O7-x

    Science.gov (United States)

    Xingkui, Zhang; Shining, Zhu; Hao, Wang; Shiyuan, Zhang; Su, Ye; Ningshen, Zhou; Ziran, Xu

    The high temperature resistivity (ρ), thermogravimetry (TG) and derivative thermogravimetry (DTG) have been used to characterize superconductor Ba2YCu3O7-x (BYCO) in O2, air and N2. The resistivity is linear from room temperature to 350°C and then deviate from linearity with oxygen evolution, the derivative of resistivity dρ/dT increases abruptly near orthorhombic to tetragonal phase transition. These phenomena can give good explanations for a two-band Drude model.

  9. Radio-frequency shot-noise measurement in a magnetic tunnel junction with a MgO barrier

    International Nuclear Information System (INIS)

    Rehman, Mushtaq; Park, Junghwan; Song, Woon; Chong, Yonuk; Lee, Yeonsub; Min, Byoungchul; Shin, Kyungho; Ryu, Sangwan; Khim, Zheong

    2010-01-01

    We measured the noise power of a magnetic tunnel junction in the frequency range of 710 ∼ 1200 MHz. A low-noise cryogenic HEMT amplifier was used to measure the small noise signal at a high frequency with wide bandwidth. The MgO-barrier tunnel junction showed large tunnel magnetoresistance ratio of 215% at low temperature, which indicates electronic transport through the tunnel barrier without any significant spin-flip scattering. In the bias-dependent noise measurement, however, the zero-bias shot noise was enhanced compared to the value expected from a perfect tunnel barrier or the value observed from a good Al-AlO x -Al tunnel junction. We assume that this enhanced noise comes from inelastic tunneling processes through the barrier, which may be related to the observed zero-bias anomaly in the differential resistance of the tunnel junctions. We present a simple phenomenological model for how the inelastic scattering process can enhance the zero-bias noise in a tunnel junction.

  10. Continuous antibiotic prophylaxis reduces the risk of febrile UTI in children with asymptomatic antenatal hydronephrosis with either ureteral dilation, high-grade vesicoureteral reflux, or ureterovesical junction obstruction.

    Science.gov (United States)

    Herz, Daniel; Merguerian, Paul; McQuiston, Leslie

    2014-08-01

    The efficacy and utility of continuous antibiotic prophylaxis (CAP) in children with congenital antenatal hydronephrosis (ANH) is uncertain. The literature has both supportive and contradictory evidence. The growing trend not to place children with ANH on CAP has created varied clinical practice based on anecdotal individual case characteristics. Our goal was to compare individual infant characteristics between those children who were maintained on CAP to those that were not to try to determine predisposing risk factors to febrile. All electronic medical records (EMRs) of children referred to our institution for congenital ANH over a period from 2001 to 2011 were examined. We excluded those referred for urinary tract infection (UTI) who had a history of congenital ANH. We also excluded those with incomplete records, or follow-up less than 2 years. Children were divided into two groups: those maintained on CAP (YCAP) and those not maintained on CAP (NCAP). Our primary endpoint was febrile UTI. Follow-up was at least 24 months. Demographic, perinatal and postnatal clinical data were recorded. Statistical analysis was performed using STATA Version 11.1. Of the 405 children fitting inclusion criteria, 278 (68.6%) children were maintained on CAP and 127 (31.4%) were not on CAP. The incidence of prematurity, oligohydramnios, perinatal respiratory complications, use of perinatal antibiotics, circumcision status, renal anomalies, associated medical diagnoses, and low birth weight did not differ between the two groups. Overall the incidence of febrile UTI during the follow-up period was 22.2%. The incidence of febrile UTI between the YCAP and NCAP groups was significant (YCAP = 7.9% and NCAP 18.7%, p = 0.021). Multivariate logistic regression using CAP as the dichotomous dependent variable revealed that ureteral dilation, high-grade vesicoureteral reflux (VUR), and ureterovesical junction (UVJ) obstruction were independent risk factors for febrile UTI. More specifically

  11. High-T{sub c} superconducting Josephson mixers for terahertz heterodyne detection

    Energy Technology Data Exchange (ETDEWEB)

    Malnou, M.; Feuillet-Palma, C.; Olanier, L.; Lesueur, J.; Bergeal, N. [Laboratoire de Physique et d' Etude des Matériaux—UMR8213-CNRS-ESPCI ParisTech-UPMC-PSL university, 10 Rue Vauquelin—75005 Paris (France); Ulysse, C.; Faini, G. [Laboratoire de Photonique et de Nanostructures LPN-CNRS, Route de Nozay, 91460 Marcoussis (France); Febvre, P. [IMEP-LAHC—UMR 5130 CNRS, Université de Savoie, 73376 Le Bourget du Lac cedex (France); Sirena, M. [Centro Atómico Bariloche, Instituto Balseiro—CNEA and Univ. Nac. de Cuyo, Av. Bustillo 9500, 8400 Bariloche, Rio Negro (Argentina)

    2014-08-21

    We report on an experimental and theoretical study of the high-frequency mixing properties of ion-irradiated YBa{sub 2}Cu{sub 3}O{sub 7} Josephson junctions embedded in THz antennas. We investigated the influence of the local oscillator power and frequency on the device performances. The experimental data are compared with theoretical predictions of the general three-port model for mixers in which the junction is described by the resistively shunted junction model. A good agreement is obtained for the conversion efficiency in different frequency ranges, spanning above and below the characteristic frequencies f{sub c} of the junctions.

  12. Production of low-affinity penicillin-binding protein by low- and high-resistance groups of methicillin-resistant Staphylococcus aureus.

    Science.gov (United States)

    Murakami, K; Nomura, K; Doi, M; Yoshida, T

    1987-01-01

    Methicillin- and cephem-resistant Staphylococcus aureus (137 strains) for which the cefazolin MICs are at least 25 micrograms/ml could be classified into low-resistance (83% of strains) and high-resistance (the remaining 17%) groups by the MIC of flomoxef (6315-S), a 1-oxacephalosporin. The MICs were less than 6.3 micrograms/ml and more than 12.5 micrograms/ml in the low- and high-resistance groups, respectively. All strains produced penicillin-binding protein 2' (PBP 2'), which has been associated with methicillin resistance and which has very low affinity for beta-lactam antibiotics. Production of PBP 2' was regulated differently in low- and high-resistance strains. With penicillinase-producing strains of the low-resistance group, cefazolin, cefamandole, and cefmetazole induced PBP 2' production about 5-fold, while flomoxef induced production 2.4-fold or less. In contrast, penicillinase-negative variants of low-resistance strains produced PBP 2' constitutively in large amounts and induction did not occur. With high-resistance strains, flomoxef induced PBP 2' to an extent similar to that of cefazolin in both penicillinase-producing and -negative strains, except for one strain in which the induction did not occur. The amount of PBP 2' induced by beta-lactam antibiotics in penicillinase-producing strains of the low-resistance group correlated well with resistance to each antibiotic. Large amounts of PBP 2' in penicillinase-negative variants of the low-resistance group did not raise the MICs of beta-lactam compounds, although these strains were more resistant when challenged with flomoxef for 2 h. Different regulation of PBP 2' production was demonstrated in the high- and low-resistance groups, and factor(s) other than PBP 2' were suggested to be involved in the methicillin resistance of high-resistance strains. Images PMID:3499861

  13. Shapiro and parametric resonances in coupled Josephson junctions

    International Nuclear Information System (INIS)

    Gaafar, Ma A; Shukrinov, Yu M; Foda, A

    2012-01-01

    The effect of microwave irradiation on the phase dynamics of intrinsic Josephson junctions in high temperature superconductors is investigated. We compare the current-voltage characteristics for a stack of coupled Josephson junctions under external irradiation calculated in the framework of CCJJ and CCJJ+DC models.

  14. Manufacturing P-N junctions in germanium bodies

    International Nuclear Information System (INIS)

    Hall, R.N.

    1980-01-01

    A method of producing p-n junctions in Ge so as to facilitate their use as radiation detectors involves forming a body of high purity p-type germanium, diffusing lithium deep into the body, in the absence of electrolytic processes, to form a junction between n-type and p-type germanium greater than 1 mm depth. (UK)

  15. Isolation of radiation resistant fungal strains from highly radioactive field

    International Nuclear Information System (INIS)

    Adam, Y.M.; Aziz, N.H.; Attaby, H.S.H.

    1995-01-01

    This study examined the radiation resistance of fungal flora isolated from the hot-lab around the radiation sources, cobalt 137 and radium 226 . The predominant mould species were: Aspergillus flavus, A. Niger, penicillium chrysogenum, cladosporium herbarum, fusarium oxysporum and alternaria citri. The D 10 values of F. Oxysporum; 2.00 KGy, A. Flavus; 1.40 KGy, P. chrysogenum; 1.15 KGy, and A. citri; 0.95 KGy, are about 1.67, 3.10, 1.92 and 1.36 folds as the D 1 0 values of the same isolates recovered from soil

  16. Josephson junctions array resonators

    Energy Technology Data Exchange (ETDEWEB)

    Gargiulo, Oscar; Muppalla, Phani; Mirzaei, Iman; Kirchmair, Gerhard [Institute for Quantum Optics and Quantum Information, Innsbruck (Austria)

    2016-07-01

    We present an experimental analysis of the self- and cross-Kerr effect of extended plasma resonances in Josephson junction chains. The chain consists of 1600 individual junctions and we can measure quality factors in excess of 10000. The Kerr effect manifests itself as a frequency shift that depends linearly on the number of photons in a resonant mode. By changing the input power we are able to measure this frequency shift on a single mode (self-kerr). By changing the input power on another mode while measuring the same one, we are able to evaluate the cross-kerr effect. We can measure the cross-Kerr effect by probing the resonance frequency of one mode while exciting another mode of the array with a microwave drive.

  17. Curved Josephson junction

    International Nuclear Information System (INIS)

    Dobrowolski, Tomasz

    2012-01-01

    The constant curvature one and quasi-one dimensional Josephson junction is considered. On the base of Maxwell equations, the sine–Gordon equation that describes an influence of curvature on the kink motion was obtained. It is showed that the method of geometrical reduction of the sine–Gordon model from three to lower dimensional manifold leads to an identical form of the sine–Gordon equation. - Highlights: ► The research on dynamics of the phase in a curved Josephson junction is performed. ► The geometrical reduction is applied to the sine–Gordon model. ► The results of geometrical reduction and the fundamental research are compared.

  18. Incidence of high-level evernimicin resistance in Enterococcus faecium among food animals and humans

    DEFF Research Database (Denmark)

    Aarestrup, Frank Møller; McNicholas, P. M.

    2002-01-01

    Six high-level evernimicin-resistant Enterococcus faecium isolates were identified among 304 avilarnycin-resistant E. faecium isolates from animals and 404 stool samples from humans with diarrhea. All four animal isolates, and one of the human isolates, were able to transfer resistance...... to a susceptible E. faecium strain. The resulting transconjugants all tested positive for the presence of emtA, a gene encoding a methyltransferase previously linked with high-level evernimicin resistance. The four transconjugants derived from animal isolates all carried the same plasmid, while a differently sized...... plasmid was found in the isolate from humans. This study demonstrated a low incidence of high-level evernimicin resistance mediated by the emtA gene in different E. faecium isolates of animal and human origin....

  19. High carotenoids content can enhance resistance of selected Pinctada fucata families to high temperature stress.

    Science.gov (United States)

    Meng, Zihao; Zhang, Bo; Liu, Baosuo; Li, Haimei; Fan, Sigang; Yu, Dahui

    2017-02-01

    Carotenoids are a class of natural antioxidants widely found in aquatic, and they have significant effects on the growth, survival, and immunity of these organisms. To investigate the mechanisms of carotenoids in high temperature resistance, we observed the immune response of selected pearl oyster Pinctada fucata (Akoya pearl oyster) families with different carotenoids contents to high temperature stress. The results indicated that the survival rate (SR) of P. fucata decreased significantly with increase in temperature from 26 °C to 34 °C and with the decrease of total carotenoids content (TCC); when the TCC was higher, the SR tended to be higher. TCC and total antioxidant capacity (TAC) decreased significantly at 30 °C with increasing stress time. Correlation analysis indicated that TAC was positively and linearly correlated with TCC, and SR was S-type correlated with TCC and TAC. Immune analysis indicated that levels of superoxide dismutase (SOD), catalase (CAT), and malondialdehyde (MDA) in selected families (with higher TCC) under temperature stress (at 30 °C) were generally significantly lower than in the control group (with lowest TCC) and from 0 to 96 h, the levels of each of these substances varied significantly. Levels of SOD, CAT, and MDA within each family first rose from 0 to 3 h, then decreased to their lowest point after 24 h, and then rose again to their highest levels at 96 h. When TCC was higher, the levels of SOD, CAT, and MDA tended to be lower. These findings indicated that carotenoids play an important role in improving survival rates of P. fucata under high temperature stress by enhancing animals' antioxidant system, and could serve as an index for breeding stress-resistant lines in selective breeding practices. Copyright © 2016 Elsevier Ltd. All rights reserved.

  20. [From the discovery of antibiotics to emerging highly drug-resistant bacteria].

    Science.gov (United States)

    Meunier, Olivier

    2015-01-01

    The discovery of antibiotics has enabled serious infections to be treated. However, bacteria resistant to several families of antibiotics and the emergence of new highly drug-resistant bacteria constitute a public health issue in France and across the world. Actions to prevent their transmission are being put in place. Copyright © 2015 Elsevier Masson SAS. All rights reserved.

  1. Corrosion resistance of high performance stainless steels in cooling water and other refinery environments

    International Nuclear Information System (INIS)

    Kovach, C.W.; Redmerski, L.S.

    1984-01-01

    The recent successful introduction of high performance stainless steels as tubing for seawater cooled electric utility condensers suggests that these alloys can also provide useful service in refinery heat exchanger applications. Since many of these applications involve higher temperature exposure than steam condensers, a study was conducted to evaluate crevice corrsion resistance over a range of cooling water temperature and chloride concentrations, and also to evaluate general corrosion resistance in some strong chemical and refinery environments. These stainless steels display excellent crevice corrosion resistance as well as good resistance to a variety of chemical environments that may be encountered in refinery, petrochemical and chemical plant service

  2. Resistive internal kink modes in a tokamak with high-pressure plasma

    International Nuclear Information System (INIS)

    Kuvshinov, B.N.; Mikhajlovskij, A.B.; Tatarinov, E.G.

    1988-01-01

    Theory of resistive internal kink modes in a tokamak with high-pressure plasma is developed. Equation for Fourie-image of disturbed displacment in a resistive layer ie derived with regard to effects of the fourth order by plasma pressure within the framework of single-liquid approach. In its structure this equation coincides with a similar equation for resistive balloon modes and has an exact solution expressed by degenerated hypergeometric function. A general dispersion equation for resistive kink modes is derived with regard to the effects indicated. It is shown that plasma pressure finiteness leads to the reduction of reconnection and tyring-mode increments

  3. Thermionic refrigeration at CNT-CNT junctions

    Science.gov (United States)

    Li, C.; Pipe, K. P.

    2016-10-01

    Monte Carlo (MC) simulation is used to study carrier energy relaxation following thermionic emission at the junction of two van der Waals bonded single-walled carbon nanotubes (SWCNTs). An energy-dependent transmission probability gives rise to energy filtering at the junction, which is predicted to increase the average electron transport energy by as much as 0.115 eV, leading to an effective Seebeck coefficient of 386 μV/K. MC results predict a long energy relaxation length (˜8 μm) for hot electrons crossing the junction into the barrier SWCNT. For SWCNTs of optimal length, an analytical transport model is used to show that thermionic cooling can outweigh parasitic heat conduction due to high SWCNT thermal conductivity, leading to a significant cooling capacity (2.4 × 106 W/cm2).

  4. Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

    Science.gov (United States)

    Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

    2017-02-09

    Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

  5. Halogen effect for improving high temperature oxidation resistance of Ti-50Al by anodization

    Science.gov (United States)

    Mo, Min-Hua; Wu, Lian-Kui; Cao, Hua-Zhen; Lin, Jun-Pin; Zheng, Guo-Qu

    2017-06-01

    The high temperature oxidation resistance of Ti-50Al was significantly improved via halogen effect which was achieved by anodizing in an ethylene glycol solution containing with fluorine ion. The anodized Ti-50Al with holes and micro-cracks could be self-repaired during oxidation at 1000 °C. The thickness of the oxide scale increases with the prolonging of oxidation time. On the basis of halogen effect for improving the high temperature oxidation resistance of Ti-50Al by anodization, only fluorine addition into the electrolyte can effectively improve the high temperature oxidation resistance of Ti-50Al.

  6. Flicker (1/f) noise in tunnel junction DC SQUIDS

    International Nuclear Information System (INIS)

    Koch, R.H.; Clarke, J.; Goubau, W.M.; Martinis, J.M.; Pegrum, C.M.; Van Harlingen, D.J.

    1983-01-01

    We have measured the spectral density of the 1/f voltage noise in current-biased resistively shunted Josephson tunnel junctions and dc SQUIDs. A theory in which fluctuations in the temperature give rise to fluctuations in the critical current and hence in the voltage predicts the magnitude of the noise quite accurately for junctions with areas of about 2 x 10 4 μm 2 , but significantly overestimates the noise for junctions with areas of about 6 μm 2 . DC SQUIDs fabricated from these two types of junctions exhibit substantially more 1/f voltage noise than would be predicted from a model in which the noise arises from critical current fluctuations in the junctions. This result was confirmed by an experiment involving two different bias current and flux modulation schemes, which demonstrated that the predominant 1/f voltage noise arises not from critical current fluctuations, but from some unknown source that can be regarded as an apparent 1/f flux noise. Measurements on five different configurations of dc SQUIDs fabricated with thin-film tunnel junctions and with widely varying areas, inductances, and junction capacitances show that the spectral density of the 1/f equivalent flux noise is roughtly constant, within a factor of three of (10 -10 /f)phi 2 0 Hz -1 . It is emphasized that 1/f flux noise may not be the predominant source of 1/f noise in SQUIDS fabricated with other technologies

  7. Methicillin-susceptible and -resistant Staphylococcus aureus with high-level antiseptic and low-level mupirocin resistance in Malaysia.

    Science.gov (United States)

    Ghasemzadeh-Moghaddam, Hamed; van Belkum, Alex; Hamat, Rukman Awang; van Wamel, Willem; Neela, Vasanthakumari

    2014-10-01

    The prevalence and spread of mupirocin and antiseptic resistance among colonizing and infectious Staphylococcus aureus were determined. S. aureus isolated from anterior nares and infection sites of patients hospitalized in the largest tertiary care referral hospital in Malaysia was investigated for mupirocin and antiseptic susceptibility testing, and for PCR detection of mupA, qacA/B, and smr genes. Twelve isolates showed resistance to mupirocin by disk diffusion, of which 10 (3.8%) harbored the mupA gene. Minimum inhibitory concentrations (MICs) ranged from 64 to 768 μg/ml for mupA positive and below 46 μg/ml for negative isolates. The mupA was more common among ST239 isolates (70%). The qacA/B was carried in 67 out of 95 methicillin-resistant Staphylococcus aureus (MRSA) (70.5%) and 3 out of 164 methicillin-susceptible Staphylococcus aureus (MSSA) (1.8%), while smr was carried in 6 out of 95 MRSA (6.3%) strains. MICs ranged from 3.9 to 15.6 μg/ml for benzethonium chloride (BTC) and benzalkonium chloride (BKC), and from 10.3 to 20.7 μg/ml for chlorhexidine digluconate (CHG). Isolates with qacA/B and smr or qacA/B alone showed higher MIC (20.7 μg/ml for CHG and 15.6 μg/ml for BTC and BKC) than the isolates that lacked antiseptic resistance genes (10.3 μg/ml for CHG and 3.9 μg/ml for BTC and BKC). In 16 cases, ST239 was isolated from the infection site and the nares simultaneously, and shared identical resistance patterns (qacAB or qacAB+smr), suggesting possible endogenous infection. Spread of low-level mupirocin resistance expressing ST239 MRSA and high-level resistance expressing emerging ST1, co-existing with antiseptic-resistant genes showing elevated MICs, should be monitored for effective infection control.

  8. Junction leakage measurements with micro four-point probes

    DEFF Research Database (Denmark)

    Lin, Rong; Petersen, Dirch Hjorth; Wang, Fei

    2012-01-01

    We present a new, preparation-free method for measuring the leakage current density on ultra-shallow junctions. The junction leakage is found by making a series of four-point sheet resistance measurements on blanket wafers with variable electrode spacings. The leakage current density is calculated...... using a fit of the measured four-point resistances to an analytical two-sheet model. The validity of the approximation involved in the two-sheet model is verified by a comparison to finite element model calculations....

  9. Probing electrical transport in individual carbon nanotubes and junctions

    International Nuclear Information System (INIS)

    Kim, Tae-Hwan; Wendelken, John F; Li Anping; Du Gaohui; Li Wenzhi

    2008-01-01

    The electrical transport properties of individual carbon nanotubes (CNTs) and multi-terminal junctions of CNTs are investigated with a quadraprobe scanning tunneling microscope. The CNTs used in this study are made of stacked herringbone-type conical graphite sheets with a cone angle of ∼20 deg. to the tube axis, and the CNT junctions have no catalytic particles in the junction areas. The CNTs have a significantly higher resistivity than conventional CNTs with concentric walls. The straight CNTs display linear current-voltage (I-V) characteristics, indicating diffusive transport rather than ballistic transport. The structural deformation in CNTs with bends substantially increases the resistivity in comparison with that for the straight segments on the same CNTs, and the I-V curve departs slightly from linearity in curved segments. The junction area of the CNT junctions behaves like an ohmic-type scattering center with linear I-V characteristics. In addition, a gating effect has not been observed, in contrast to the case for conventional multi-walled CNT junctions. These unusual transport properties can be attributed to the enhanced inter-layer interaction in the herringbone-type CNTs.

  10. Variation in Resistance of Natural Isolates of Escherichia coli O157 to High Hydrostatic Pressure, Mild Heat, and Other Stresses

    OpenAIRE

    Benito, Amparo; Ventoura, Georgia; Casadei, Maria; Robinson, Tobin; Mackey, Bernard

    1999-01-01

    Strains of Escherichia coli O157 isolated from patients with clinical cases of food-borne illness and other sources exhibited wide differences in resistance to high hydrostatic pressure. The most pressure-resistant strains were also more resistant to mild heat than other strains. Strain C9490, a representative pressure-resistant strain, was also more resistant to acid, oxidative, and osmotic stresses than the pressure-sensitive strain NCTC 12079. Most of these differences in resistance were o...

  11. Relaxation oscillation logic in Josephson junction circuits

    International Nuclear Information System (INIS)

    Fulton, T.A.

    1981-01-01

    A dc powered, self-resetting Josephson junction logic circuit relying on relaxation oscillations is described. A pair of Josephson junction gates are connected in series, a first shunt is connected in parallel with one of the gates, and a second shunt is connected in parallel with the series combination of gates. The resistance of the shunts and the dc bias current bias the gates so that they are capable of undergoing relaxation oscillations. The first shunt forms an output line whereas the second shunt forms a control loop. The bias current is applied to the gates so that, in the quiescent state, the gate in parallel with the second shunt is at V O, and the other gate is undergoing relaxation oscillations. By controlling the state of the first gate with the current in the output loop of another identical circuit, the invert function is performed

  12. Magnetoresistance in Co/AlO sub x /Co tunnel junction arrays

    CERN Document Server

    Urech, M; Haviland, D B

    2002-01-01

    Lateral arrays of Co/AlO sub x /Co junctions with dimensions down to 60 nm and inter-junction separations approx 60-100 nm have been fabricated and analyzed for possible coherent tunneling effects. Extra attention is paid to avoid uncertainties due to inconsistencies in switching and/or resistance of successive barriers. We observe approx 10% magnetoresistance enhancement at moderate bias in double junctions that cannot be accounted for by a simple model of two resistsors in series.

  13. Status of insecticide resistance in high-risk malaria provinces in Afghanistan.

    Science.gov (United States)

    Ahmad, Mushtaq; Buhler, Cyril; Pignatelli, Patricia; Ranson, Hilary; Nahzat, Sami Mohammad; Naseem, Mohammad; Sabawoon, Muhammad Farooq; Siddiqi, Abdul Majeed; Vink, Martijn

    2016-02-18

    Insecticide resistance seriously threatens the efficacy of vector control interventions in malaria endemic countries. In Afghanistan, the status of insecticide resistance is largely unknown while distribution of long-lasting insecticidal nets has intensified in recent years. The main objective of this study was thus to measure the level of resistance to four classes of insecticides in provinces with medium to high risk of malaria transmission. Adult female mosquitoes were reared from larvae successively collected in the provinces of Nangarhar, Kunar, Badakhshan, Ghazni and Laghman from August to October 2014. WHO insecticide susceptibility tests were performed with DDT (4 %), malathion (5 %), bendiocarb (0.1 %), permethrin (0.75 %) and deltamethrin (0.05 %). In addition, the presence of kdr mutations was investigated in deltamethrin resistant and susceptible Anopheles stephensi mosquitoes collected in the eastern provinces of Nangarhar and Kunar. Analyses of mortality rates revealed emerging resistance against all four classes of insecticides in the provinces located east and south of the Hindu Kush mountain range. Resistance is observed in both An. stephensi and Anopheles culicifacies, the two dominant malaria vectors in these provinces. Anopheles superpictus in the northern province of Badakhshan shows a different pattern of susceptibility with suspected resistance observed only for deltamethrin and bendiocarb. Genotype analysis of knock down resistance (kdr) mutations at the voltage-gated channel gene from An. stephensi mosquitoes shows the presence of the known resistant alleles L1014S and L1014F. However, a significant fraction of deltamethrin-resistant mosquitoes were homozygous for the 1014L wild type allele indicating that other mechanisms must be considered to account for the observed pyrethroid resistance. This study confirms the importance of monitoring insecticide resistance for the development of an integrated vector management in Afghanistan. The

  14. High yielding and disease resistant mutants of sorghum in Venezuela

    Energy Technology Data Exchange (ETDEWEB)

    Reinoso, A; Murty, B R; Taborda, F [Faculty of Agronomy, University of Zulia, Maracaibo (Venezuela)

    1987-07-01

    The programme was assisted by IAEA under project VEN/5/005 since 1978. It aims at improvement of plant type, earliness and resistance to Macrophomina in the locally adapted varieties Criollo Rojo Pequeno (CRP) and Criollo Blanco Alto (CBA). The mutagenic treatment consisted of seed irradiation at 20, 30 and 40 kR of gamma rays and chemical mutagenesis using sodium azide followed by 5000 kR gamma radiation. The 16 best mutants were evaluated in multilocation trials during M{sub 6}-M{sub 9} 1981-1984: Mutants from CRP namely 1279, 1543, 1265, 2085, 1251 and 1359 and four mutant from CBA, 109, 467, 469 and 81-1227 were found to be superior to their parents and the existing commercial hybrids. CRP 1279, 1543 and 2085 are already under large scale cultivation by farmers and under process for cultivar certification by the Ministry of Agriculture.

  15. High yielding and disease resistant mutants of sorghum in Venezuela

    International Nuclear Information System (INIS)

    Reinoso, A.; Murty, B.R.; Taborda, F.

    1987-01-01

    The programme was assisted by IAEA under project VEN/5/005 since 1978. It aims at improvement of plant type, earliness and resistance to Macrophomina in the locally adapted varieties Criollo Rojo Pequeno (CRP) and Criollo Blanco Alto (CBA). The mutagenic treatment consisted of seed irradiation at 20, 30 and 40 kR of gamma rays and chemical mutagenesis using sodium azide followed by 5000 kR gamma radiation. The 16 best mutants were evaluated in multilocation trials during M 6 -M 9 1981-1984: Mutants from CRP namely 1279, 1543, 1265, 2085, 1251 and 1359 and four mutant from CBA, 109, 467, 469 and 81-1227 were found to be superior to their parents and the existing commercial hybrids. CRP 1279, 1543 and 2085 are already under large scale cultivation by farmers and under process for cultivar certification by the Ministry of Agriculture

  16. Glass-ceramics frits for high mechanical resistance glazes

    International Nuclear Information System (INIS)

    Gajek, M.; Lis, J.; Partyka, J.; Wojczyk, M.

    2004-01-01

    The obtaining and application of glass-ceramics frits for glazes were discussed by many authors. This glazes are characterized by raised mechanical parameters and chemical resistance. Factors, that determines crystallization process are initial composition, heat treatment and nucleation agents. The kind of crystalline phases, crystal habit and the content of residual glass phase play the decisive role in the strengthening of the glaze. In this paper are shown results of investigation over controlled crystallization in the ternary systems; Li 2 O-Al 2 O 3 -SiO 2 , CaO-Al 2 O 3 -SiO 2 , ZnO-Al 2 O 3 -SiO 2 , MgO-Al 2 O 3 -SiO 2 , with or without nucleation agents. (author)

  17. Molecular electronics: some views on transport junctions and beyond.

    Science.gov (United States)

    Joachim, Christian; Ratner, Mark A

    2005-06-21

    The field of molecular electronics comprises a fundamental set of issues concerning the electronic response of molecules as parts of a mesoscopic structure and a technology-facing area of science. We will overview some important aspects of these subfields. The most advanced ideas in the field involve the use of molecules as individual logic or memory units and are broadly based on using the quantum state space of the molecule. Current work in molecular electronics usually addresses molecular junction transport, where the molecule acts as a barrier for incoming electrons: This is the fundamental Landauer idea of "conduction as scattering" generalized to molecular junction structures. Another point of view in terms of superexchange as a guiding mechanism for coherent electron transfer through the molecular bridge is discussed. Molecules generally exhibit relatively strong vibronic coupling. The last section of this overview focuses on vibronic effects, including inelastic electron tunneling spectroscopy, hysteresis in junction charge transport, and negative differential resistance in molecular transport junctions.

  18. Niobium nitride Josephson tunnel junctions with magnesium oxide barriers

    International Nuclear Information System (INIS)

    Shoji, A.; Aoyagi, M.; Kosaka, S.; Shinoki, F.; Hayakawa, H.

    1985-01-01

    Niobium nitride-niobium nitride Josephson tunnel junctions have been fabricated using amorphous magnesium oxide (a-MgO) films as barriers. These junctions have excellent tunneling characteristics. For example, a large gap voltage (V/sub g/ = 5.1 mV), a large product of the maximum critical current and the normal tunneling resistance (I/sub c/R/sub n/ = 3.25 mV), and a small subgap leakage current (V/sub m/ = 45 mV, measured at 3 mV) have been obtained for a NbN/a-MgO/NbN junction. The critical current of this junction remains finite up to 14.5 K

  19. High temperature creep strength of Advanced Radiation Resistant Oxide Dispersion Strengthened Steels

    Energy Technology Data Exchange (ETDEWEB)

    Noh, Sanghoon; Kim, Tae Kyu [Korea Atomic Energy Research Institute, Daejeon (Korea, Republic of)

    2014-05-15

    Austenitic stainless steel may be one of the candidates because of good strength and corrosion resistance at the high temperatures, however irradiation swelling well occurred to 120dpa at high temperatures and this leads the decrease of the mechanical properties and dimensional stability. Compared to this, ferritic/martensitic steel is a good solution because of excellent thermal conductivity and good swelling resistance. Unfortunately, the available temperature range of ferritic/martensitic steel is limited up to 650 .deg. C. ODS steel is the most promising structural material because of excellent creep and irradiation resistance by uniformly distributed nano-oxide particles with a high density which is extremely stable at the high temperature in ferritic/martensitic matrix. In this study, high temperature strength of advanced radiation resistance ODS steel was investigated for the core structural material of next generation nuclear systems. ODS martensitic steel was designed to have high homogeneity, productivity and reproducibility. Mechanical alloying, hot isostactic pressing and hot rolling processes were employed to fabricate the ODS steels, and creep rupture test as well as tensile test were examined to investigate the behavior at high temperatures. ODS steels were fabricated by a mechanical alloying and hot consolidation processes. Mechanical properties at high temperatures were investigated. The creep resistance of advanced radiation resistant ODS steels was more superior than those of ferritic/ martensitic steel, austenitic stainless steel and even a conventional ODS steel.

  20. High dietary zinc feeding promotes persistence of multi-resistant E. coli in the swine gut.

    Science.gov (United States)

    Ciesinski, Lisa; Guenther, Sebastian; Pieper, Robert; Kalisch, Martin; Bednorz, Carmen; Wieler, Lothar H

    2018-01-01

    High levels of zinc oxide are used frequently as feed additive in pigs to improve gut health and growth performance and are still suggested as an alternative to antimicrobial growth promoters. However, we have recently described an increase of multi-resistant E. coli in association to zinc feeding in piglets. This previous study focused on clonal diversity of E. coli, observing the effect on multi-resistant strains by chance. To shed further light into this highly important topic and falsify our previous findings, we performed a zinc pig feeding trial where we specifically focused on in-depth analysis of antimicrobial resistant E. coli. Under controlled experimental conditions, piglets were randomly allocated to a high dietary zinc (zinc group) and a background zinc feeding group (control group). At different ages samples were taken from feces, digesta, and mucosa and absolute E. coli numbers were determined. A total of 2665 E. coli isolates were than phenotypically tested for antimicrobial resistance and results were confirmed by minimum inhibitory concentration testing for random samples. In piglets fed with high dietary zinc, we detected a substantial increase of multi-resistant E. coli in all gut habitats tested, ranging from 28.9-30.2% multi-resistant E. coli compared to 5.8-14.0% in the control group. This increase was independent of the total number of E. coli. Interestingly, the total amount of the E. coli population decreased over time. Thus, the increase of the multi-resistant E. coli populations seems to be linked with persistence of the resistant population, caused by the influence of high dietary zinc feeding. In conclusion, these findings corroborate our previous report linking high dietary zinc feeding of piglets with the occurrence of antimicrobial resistant E. coli and therefore question the feeding of high dietary zinc oxide as alternative to antimicrobial growth promoters.

  1. House dust mite allergen Der p 1 effects on sinonasal epithelial tight junctions.

    Science.gov (United States)

    Henriquez, Oswaldo A; Den Beste, Kyle; Hoddeson, Elizabeth K; Parkos, Charles A; Nusrat, Asma; Wise, Sarah K

    2013-08-01

    Epithelial permeability is highly dependent upon the integrity of tight junctions, which are cell-cell adhesion complexes located at the apical aspect of the lateral membrane of polarized epithelial cells. We hypothesize that sinonasal epithelial exposure to Der p 1 house dust mite antigen decreases expression of tight junction proteins (TJPs), representing a potential mechanism for increased permeability and presentation of antigens across the sinonasal epithelial layer. Confluent cultured primary human sinonasal epithelial cells were exposed to recombinant Der p 1 antigen vs control, and transepithelial resistance measurements were performed over 24 hours. Antibody staining for a panel of TJPs was examined with immunofluorescence/confocal microscopy and Western blotting. Tissue for these experiments was obtained from 4 patients total. Der p 1 exposed sinonasal cells showed a marked decrease in transepithelial resistance when compared to control cells. In addition, results of Western immunoblot and immunofluorescent labeling demonstrated decreased expression of TJPs claudin-1 and junction adhesion molecule-A (JAM-A) in Der p 1-exposed cultured sinonasal cells vs controls. Der p 1 antigen exposure decreases sinonasal epithelium TJP expression, most notably seen in JAM-A and claudin-1 in these preliminary experiments. This decreased TJP expression likely contributes to increased epithelial permeability and represents a potential mechanism for transepithelial antigen exposure in allergic rhinitis. © 2013 ARS-AAOA, LLC.

  2. Electrical control of memristance and magnetoresistance in oxide magnetic tunnel junctions

    KAUST Repository

    Zhang, Kun

    2015-01-01

    Electric-field control of magnetic and transport properties of magnetic tunnel junctions has promising applications in spintronics. Here, we experimentally demonstrate a reversible electrical manipulation of memristance, magnetoresistance, and exchange bias in Co/CoO–ZnO/Co magnetic tunnel junctions, which enables the realization of four nonvolatile resistance states. Moreover, greatly enhanced tunneling magnetoresistance of 68% was observed due to the enhanced spin polarization of the bottom Co/CoO interface. The ab initio calculations further indicate that the spin polarization of the Co/CoO interface is as high as 73% near the Fermi level and plenty of oxygen vacancies can induce metal–insulator transition of the CoO1−v layer. Thus, the electrical manipulation mechanism on the memristance, magnetoresistance and exchange bias can be attributed to the electric-field-driven migration of oxygen ions/vacancies between very thin CoO and ZnO layers.

  3. Giant electroresistance of super-tetragonal BiFeO3-based ferroelectric tunnel junctions.

    Science.gov (United States)

    Yamada, Hiroyuki; Garcia, Vincent; Fusil, Stéphane; Boyn, Sören; Marinova, Maya; Gloter, Alexandre; Xavier, Stéphane; Grollier, Julie; Jacquet, Eric; Carrétéro, Cécile; Deranlot, Cyrile; Bibes, Manuel; Barthélémy, Agnès

    2013-06-25

    Ferroelectric tunnel junctions enable a nondestructive readout of the ferroelectric state via a change of resistance induced by switching the ferroelectric polarization. We fabricated submicrometer solid-state ferroelectric tunnel junctions based on a recently discovered polymorph of BiFeO3 with giant axial ratio ("T-phase"). Applying voltage pulses to the junctions leads to the highest resistance changes (OFF/ON ratio >10,000) ever reported with ferroelectric tunnel junctions. Along with the good retention properties, this giant effect reinforces the interest in nonvolatile memories based on ferroelectric tunnel junctions. We also show that the changes in resistance scale with the nucleation and growth of ferroelectric domains in the ultrathin BiFeO3 (imaged by piezoresponse force microscopy), thereby suggesting potential as multilevel memory cells and memristors.

  4. Macroscopic quantum effects in the zero voltage state of the current biased Josephson junction

    International Nuclear Information System (INIS)

    Clarke, J.; Devoret, M.H.; Martinis, J.; Esteve, D.

    1985-05-01

    When a weak microwave current is applied to a current-biased Josephson tunnel junction in the thermal limit the escape rate from the zero voltage state is enhanced when the microwave frequency is near the plasma frequency of the junction. The resonance curve is markedly asymmetric because of the anharmonic properties of the potential well: this behavior is well explained by a computer simulation using a resistively shunted junction model. This phenomenon of resonant activation enables one to make in situ measurements of the capacitance and resistance shunting the junction, including contributions from the complex impedance presented by the current leads. For the relatively large area junctions studied in these experiments, the external capacitive loading was relatively unimportant, but the damping was entirely dominated by the external resistance

  5. Inexpensive system protects megawatt resistance-heating furnace against high-voltage surges

    Science.gov (United States)

    Stearns, E. J.

    1971-01-01

    Coolant gas extinguishes arcing across the break in a heater element. Air-gap shunt which bypasses high voltage impressed across the circuit prevents damage if the resistance elements break and open the inductive circuit.

  6. Characterizing clinical isolates of Acanthamoeba castellanii with high resistance to polyhexamethylene biguanide in Taiwan

    Directory of Open Access Journals (Sweden)

    Fu-Chin Huang

    2017-10-01

    Conclusion: Our results confirm the existence of clinical isolates of A. castellanii with high resistance to PHMB in Taiwan and present the alternative drug tolerance of A. castellanii in addition to the transformation of pseudocyst/cyst.

  7. Title: High-level cefotaxime-resistant Proteus mirabilis strain isolated ...

    African Journals Online (AJOL)

    oaca

    High-level cefotaxime-resistant Proteus mirabilis strain isolated from a Tunisian .... UV- visible) at 37°C. Specific activity is calculated on depending of. Ross and ..... Performance standards for antimicrobial susceptibility testing;. Seventeenth ...

  8. Analysis of clinical isolates of Helicobacter pylori in Pakistan reveals high degrees of pathogenicity and high frequencies of antibiotic resistance.

    Science.gov (United States)

    Rasheed, Faisal; Campbell, Barry James; Alfizah, Hanafiah; Varro, Andrea; Zahra, Rabaab; Yamaoka, Yoshio; Pritchard, David Mark

    2014-10-01

    Antibiotic resistance in Helicobacter pylori contributes to failure in eradicating the infection and is most often due to point and missense mutations in a few key genes. The antibiotic susceptibility profiles of H. pylori isolates from 46 Pakistani patients were determined by Etest. Resistance and pathogenicity genes were amplified, and sequences were analyzed to determine the presence of mutations. A high percentage of isolates (73.9%) were resistant to metronidazole (MTZ), with considerable resistance to clarithromycin (CLR; 47.8%) and amoxicillin (AML; 54.3%) also observed. Relatively few isolates were resistant to tetracycline (TET; 4.3%) or to ciprofloxacin (CIP; 13%). However, most isolates (n = 43) exhibited resistance to one or more antibiotics. MTZ-resistant isolates contained missense mutations in oxygen-independent NADPH nitroreductase (RdxA; 8 mutations found) and NADH flavin oxidoreductase (FrxA; 4 mutations found). In the 23S rRNA gene, responsible for CLR resistance, a new point mutation (A2181G) and 4 previously reported mutations were identified. Pathogenicity genes cagA, dupA, and vacA s1a/m1 were detected frequently in isolates which were also found to be resistant to MTZ, CLR, and AML. A high percentage of CagA and VacA seropositivity was also observed in these patients. Phylogenetic analysis of partial sequences showed uniform distribution of the 3' region of cagA throughout the tree. We have identified H. pylori isolates in Pakistan which harbor pathogenicity genes and worrying antibiotic resistance profiles as a result of having acquired multiple point and missense mutations. H. pylori eradication regimens should therefore be reevaluated in this setting. © 2014 John Wiley & Sons Ltd.

  9. Effects of high-intensity interval cycling performed after resistance training on muscle strength and hypertrophy.

    Science.gov (United States)

    Tsitkanou, S; Spengos, K; Stasinaki, A-N; Zaras, N; Bogdanis, G; Papadimas, G; Terzis, G

    2017-11-01

    Aim of the study was to investigate whether high-intensity interval cycling performed immediately after resistance training would inhibit muscle strength increase and hypertrophy expected from resistance training per se. Twenty-two young men were assigned into either resistance training (RE; N = 11) or resistance training plus high-intensity interval cycling (REC; N = 11). Lower body muscle strength and rate of force development (RFD), quadriceps cross-sectional area (CSA) and vastus lateralis muscle architecture, muscle fiber type composition and capillarization, and estimated aerobic capacity were evaluated before and after 8 weeks of training (2 times per week). Muscle strength and quadriceps CSA were significantly and similarly increased after both interventions. Fiber CSA increased significantly and similarly after both RE (type I: 13.6 ± 3.7%, type IIA: 17.6 ± 4.4%, type IIX: 23.2 ± 5.7%, P high-intensity interval cycling performed after heavy-resistance exercise may not inhibit resistance exercise-induced muscle strength/hypertrophy after 2 months of training, while it prompts aerobic capacity and muscle capillarization. The addition of high-intensity cycling after heavy-resistance exercise may decrease RFD partly due to muscle architectural changes. © 2016 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  10. Study on microstructure and high temperature wear resistance of laser cladded nuclear valve clack

    International Nuclear Information System (INIS)

    Zhang Chunliang; Chen Zichen

    2002-01-01

    Laser cladding of Co-base alloy on the nuclear valve-sealing surface are performed with a 5 kW CO 2 transverse flowing laser. The microstructure and the high temperature impact-slide wear resistance of the laser cladded coating and the plasma cladded coating are studied. The results show that the microstructure, the dilution rate and the high temperature impact-slide wear resistance of the laser cladded coating have obvious advantages over the spurt cladding processing

  11. Intermittent dynamics of nonlinear resistive tearing modes at extremely high magnetic Reynolds number

    International Nuclear Information System (INIS)

    Miyoshi, Takahiro; Becchaku, Masahiro; Kusano, Kanya

    2008-01-01

    Nonlinear dynamics of the resistive tearing instability in high magnetic Reynolds number (R m ) plasmas is studied by newly developing an accurate and robust resistive magnetohydrodynamic (MHD) scheme. The results show that reconnection processes strongly depend on R m . Particularly, in a high R m case, small-scale plasmoids induced by a secondary instability are intermittently generated and ejected accompanied by fast shocks. According to the intermittent processes, the reconnection rate increases intermittently at a later nonlinear stage. (author)

  12. Tunneling spectroscopy on grain boundary junctions in electron-doped high-temperature superconductors; Tunnelspektroskopie an Korngrenzenkontakten aus elektronendotierten Hochtemperatur-Supraleitern

    Energy Technology Data Exchange (ETDEWEB)

    Welter, B.

    2007-12-07

    Some methods are developed anf presented, by means of which from experimental tunnel spectra, especially on symmetric SIS contacts, informations about the properties of electrodes and tunnel barriers can be obtained. Especially a procedure for the numerical unfolding of symmetric SIS spectra is proposed. Furthermore a series of models is summarized, which can explain the linear background conductivity observed in many spectra on high-temperature superconductors. The results of resistance measurements on film bridges are presented. Especially different methods for the determination of H{sub c2}(T) respectively H{sub c2}(0) are presented and applied to the experimental data. Finally the results of the tunnel-spectroscopy measurements are shown.

  13. RF Shot Noise Measurements in Au Atomic-scale Junctions

    Science.gov (United States)

    Chen, Ruoyu

    Conduction electrons are responsible for many physical or chemical phenomena in condensed matter systems, and their behavior can be directly studied by electronic transport measurements. In conventional transport measurements, conductance or resistance is usually the focus. Such a measurement can be as simple as a quick two terminal DC check by a multi-meter, or a more sophisticated lock-in measurement of multiple higher harmonic signals synchronized to different frequencies. Conductance carries direct information about the quasi-particle density of states and the local electronic distributions, which are usually Fermi-Dirac distribution. Conductance is modified or dominated by scattering from defacts or interfaces, and could also reflect the spin-spin exchange interactions or inelastic couplings with phonons and photons. Naturally one can ask the question: is there anything else we can measure electronically, which carries extra information that a conductance measurement does not provide? One answer to this question is the electronic noise. While the conductance reflects the average charge conduction ability of a system, noise describes how the physical quantities fluctuate around their average values. Some of the fluctuations carry information about their physical origins. This thesis will focus on one particular type of the electronic noise shot noise, but other types of noise will also be introduced and discussed. We choose to measure the radio frequency component of shot noise, combining with a modulated lock-in detection technique, which provides a method to largely get rid of other unwanted low-frequency noise signals. Au atomic-scale junctions are the systems we studied here. Au is relatively well understood and will not generate too many complications, so it's ideal as the first platform for us to understand both shot noise itself and our RF technique. On the other hand, the atomic scale raises fundamental questions about electronic transport and local

  14. High precision silicon piezo resistive SMART pressure sensor

    International Nuclear Information System (INIS)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure 'module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the 'in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures

  15. High precision silicon piezo resistive SMART pressure sensor

    Science.gov (United States)

    Brown, Rod

    2005-01-01

    Instruments for test and calibration require a pressure sensor that is precise and stable. Market forces also dictate a move away from single measurand test equipment and, certainly in the case of pressure, away from single range equipment. A pressure `module' is required which excels in pressure measurement but is interchangble with sensors for other measurands. A communications interface for such a sensor has been specified. Instrument Digital Output Sensor (IDOS) that permits this interchanagability and allows the sensor to be inside or outside the measuring instrument. This paper covers the design and specification of a silicon diaphragm piezo resistive SMART sensor using this interface. A brief history of instrument sensors will be given to establish the background to this development. Design choices of the silicon doping, bridge energisation method, temperature sensing, signal conversion, data processing, compensation method, communications interface will be discussed. The physical format of the `in-instrument' version will be shown and then extended to the packaging design for the external version. Test results will show the accuracy achieved exceeds the target of 0.01%FS over a range of temperatures.

  16. Materials and coatings to resist high temperature oxidation and corrosion

    International Nuclear Information System (INIS)

    1977-01-01

    Object of the given papers are the oxidation and corrosion behaviour of several materials (such as stainless steels, iron-, or nickel-, or cobalt-base alloys, Si-based ceramics) used at high temperatures and various investigations on high-temperature protective coatings. (IHoe) [de

  17. The human myotendinous junction

    DEFF Research Database (Denmark)

    Knudsen, A B; Larsen, M; Mackey, Abigail

    2015-01-01

    The myotendinous junction (MTJ) is a specialized structure in the musculotendinous system, where force is transmitted from muscle to tendon. Animal models have shown that the MTJ takes form of tendon finger-like processes merging with muscle tissue. The human MTJ is largely unknown and has never...... been described in three dimensions (3D). The aim of this study was to describe the ultrastructure of the human MTJ and render 3D reconstructions. Fourteen subjects (age 25 ± 3 years) with isolated injury of the anterior cruciate ligament (ACL), scheduled for reconstruction with a semitendinosus...

  18. Tight junctions and human diseases.

    Science.gov (United States)

    Sawada, Norimasa; Murata, Masaki; Kikuchi, Keisuke; Osanai, Makoto; Tobioka, Hirotoshi; Kojima, Takashi; Chiba, Hideki

    2003-09-01

    Tight junctions are intercellular junctions adjacent to the apical end of the lateral membrane surface. They have two functions, the barrier (or gate) function and the fence function. The barrier function of tight junctions regulates the passage of ions, water, and various macromolecules, even of cancer cells, through paracellular spaces. The barrier function is thus relevant to edema, jaundice, diarrhea, and blood-borne metastasis. On the other hand, the fence function maintains cell polarity. In other words, tight junctions work as a fence to prevent intermixing of molecules in the apical membrane with those in the lateral membrane. This function is deeply involved in cancer cell biology, in terms of loss of cell polarity. Of the proteins comprising tight junctions, integral membrane proteins occludin, claudins, and JAMs have been recently discovered. Of these molecules, claudins are exclusively responsible for the formation of tight-junction strands and are connected with the actin cytoskeleton mediated by ZO-1. Thus, both functions of tight junctions are dependent on the integrity of the actin cytoskeleton as well as ATP. Mutations in the claudin14 and the claudin16 genes result in hereditary deafness and hereditary hypomagnesemia, respectively. Some pathogenic bacteria and viruses target and affect the tight-junction function, leading to diseases. In this review, the relationship between tight junctions and human diseases is summarized.

  19. Gap junctions and motor behavior

    DEFF Research Database (Denmark)

    Kiehn, Ole; Tresch, Matthew C.

    2002-01-01

    The production of any motor behavior requires coordinated activity in motor neurons and premotor networks. In vertebrates, this coordination is often assumed to take place through chemical synapses. Here we review recent data suggesting that electrical gap-junction coupling plays an important role...... in coordinating and generating motor outputs in embryonic and early postnatal life. Considering the recent demonstration of a prevalent expression of gap-junction proteins and gap-junction structures in the adult mammalian spinal cord, we suggest that neuronal gap-junction coupling might also contribute...... to the production of motor behavior in adult mammals....

  20. No seasonal accumulation of resistant P. falciparum when high-dose chloroquine is used

    DEFF Research Database (Denmark)

    Ursing, Johan; Kofoed, Poul-Erik; Rodrigues, Amabelia

    2009-01-01

    increase of pfcrt 76T if the high doses of CQ commonly used are effective. METHODS AND FINDINGS: P. falciparum parasite density, age, sex, the proportion of chloroquine resistance associated haplotypes pfcrt 76T and P. falciparum multidrug resistance gene 1 86Y were assessed in 988 samples collected from...... to become the dominant P.falciparum type in Guinea-Bissau. This is most likely due to the efficacy of high-dose chloroquine as used in Guinea-Bissau, combined with a loss of fitness associated with pfcrt 76T.......BACKGROUND: Potentially chloroquine resistant P. falciparum, identified by the 76T haplotype in the chloroquine resistance transporter (pfcrt 76T), are highly prevalent throughout Africa. In Guinea-Bissau, normal and double dose chloroquine have respective efficacies of 34% and 78% against P...

  1. High hardness and superlative oxidation resistance in a pseudo-icosahehdral Cr-Al binary

    Science.gov (United States)

    Simonson, J. W.; Rosa, R.; Antonacci, A. K.; He, H.; Bender, A. D.; Pabla, J.; Adrip, W.; McNally, D. E.; Zebro, A.; Kamenov, P.; Geschwind, G.; Ghose, S.; Dooryhee, E.; Ibrahim, A.; Aronson, M. C.

    Improving the efficiency of fossil fuel plants is a practical option for decreasing carbon dioxide emissions from electrical power generation. Present limits on the operating temperatures of exposed steel components, however, restrict steam temperatures and therefore energy efficiency. Even as a new generation of creep-resistant, high strength steels retain long term structural stability to temperatures as high as ~ 973 K, the low Cr-content of these alloys hinders their oxidation resistance, necessitating the development of new corrosion resistant coatings. We report here the nearly ideal properties of potential coating material Cr55Al229, which exhibits high hardness at room temperature as well as low thermal conductivity and superlative oxidation resistance at 973 K, with an oxidation rate at least three times smaller than those of benchmark materials. These properties originate from a pseudo-icosahedral crystal structure, suggesting new criteria for future research.

  2. Spatially resolved detection of mutually locked Josephson junctions in arrays

    International Nuclear Information System (INIS)

    Keck, M.; Doderer, T.; Huebener, R.P.; Traeuble, T.; Dolata, R.; Weimann, T.; Niemeyer, J.

    1997-01-01

    Mutual locking due to the internal coupling in two-dimensional arrays of Josephson junctions was investigated. The appearance of Shapiro steps in the current versus voltage curve of a coupled on-chip detector junction is used to indicate coherent oscillations in the array. A highly coherent state is observed for some range of the array bias current. By scanning the array with a low-power electron beam, mutually locked junctions remain locked while the unlocked junctions generate a beam-induced additional voltage drop at the array. This imaging technique allows the detection of the nonlocked or weakly locked Josephson junctions in a (partially) locked array state. copyright 1997 American Institute of Physics

  3. Observation of supercurrent in graphene-based Josephson junction

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Libin; Li, Sen; Kang, Ning [Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871 (China); Xu, Chuan; Ren, Wencai [Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)

    2015-07-01

    Josephson junctions with a normal metal region sandwiched between two superconductors (S) are known as superconductor- normal-superconductor (SNS) structures. It has attracted significant attention especially when changing the normal metal with graphene, which allow for high tunability with the gate voltage and to study the proximity effect of the massless Dirac fermions. Here we report our work on graphene-based Josephson junction with a new two dimensional superconductor crystal, which grown directly on graphene, as superconducting electrodes. At low temperature, we observer proximity effect induced supercurrent flowing through the junction. The temperature and the magnetic field dependences of the critical current characteristics of the junction are also studied. The critical current exhibits a Fraunhofer-type diffraction pattern against magnetic field. Our experiments provided a new route of fabrication of graphene-based Josephson junction.

  4. Does High-Dose Antimicrobial Chemotherapy Prevent the Evolution of Resistance?

    Science.gov (United States)

    Day, Troy; Read, Andrew F.

    2016-01-01

    High-dose chemotherapy has long been advocated as a means of controlling drug resistance in infectious diseases but recent empirical studies have begun to challenge this view. We develop a very general framework for modeling and understanding resistance emergence based on principles from evolutionary biology. We use this framework to show how high-dose chemotherapy engenders opposing evolutionary processes involving the mutational input of resistant strains and their release from ecological competition. Whether such therapy provides the best approach for controlling resistance therefore depends on the relative strengths of these processes. These opposing processes typically lead to a unimodal relationship between drug pressure and resistance emergence. As a result, the optimal drug dose lies at either end of the therapeutic window of clinically acceptable concentrations. We illustrate our findings with a simple model that shows how a seemingly minor change in parameter values can alter the outcome from one where high-dose chemotherapy is optimal to one where using the smallest clinically effective dose is best. A review of the available empirical evidence provides broad support for these general conclusions. Our analysis opens up treatment options not currently considered as resistance management strategies, and it also simplifies the experiments required to determine the drug doses which best retard resistance emergence in patients. PMID:26820986

  5. High cycle thermal fatigue: benchmark at a Te junction piping system of the nuclear power plant Phenix; Fatigue a grand nombre de cycles: benchmark d'un te de tuyauterie de la centrale Phenix

    Energy Technology Data Exchange (ETDEWEB)

    Gelineau, O.; Simoneau, J.P. [NOVATOME, a Div. of Framatome, 69 - Lyon (France); Roubin, P. [CEA Cadarache, DER, 13 - Saint-Paul-lez-Durance (France)

    2001-07-01

    This paper presents the studies of the benchmark concerning a high cycle thermal fatigue problem. This benchmark is based on an industrial case, a Te junction piping system of the french FBR Phenix. The main objectives were the comparison of the different methods used by the participants and the analysis of the damage evaluation methods capacity compared to the observed phenomena. This study took place in an international framework with the United Kingdom, Italy, Japan, Korea, Russia, India and France. (A.L.B.)

  6. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions.

    Science.gov (United States)

    Félix, L Avilés; Sirena, M; Guzmán, L A Agüero; Sutter, J González; Vargas, S Pons; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-12-14

    The transport properties of ultra-thin SrTiO(3) (STO) layers grown over YBa(2)Cu(3)O(7) electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions.

  7. Structural and electrical characterization of ultra-thin SrTiO3 tunnel barriers grown over YBa2Cu3O7 electrodes for the development of high Tc Josephson junctions

    International Nuclear Information System (INIS)

    Avilés Félix, L; Sirena, M; Agüero Guzmán, L A; González Sutter, J; Pons Vargas, S; Steren, L B; Bernard, R; Trastoy, J; Villegas, J E; Briático, J; Bergeal, N; Lesueur, J; Faini, G

    2012-01-01

    The transport properties of ultra-thin SrTiO 3 (STO) layers grown over YBa 2 Cu 3 O 7 electrodes were studied by conductive atomic force microscopy at the nano-scale. A very good control of the barrier thickness was achieved during the deposition process. A phenomenological approach was used to obtain critical parameters regarding the structural and electrical properties of the system. The STO layers present an energy barrier of 0.9 eV and an attenuation length of 0.23 nm, indicating very good insulating properties for the development of high-quality Josephson junctions. (paper)

  8. Filtering microfluidic bubble trains at a symmetric junction.

    Science.gov (United States)

    Parthiban, Pravien; Khan, Saif A

    2012-02-07

    We report how a nominally symmetric microfluidic junction can be used to sort all bubbles of an incoming train exclusively into one of its arms. The existence of this "filter" regime is unexpected, given that the junction is symmetric. We analyze this behavior by quantifying how bubbles modulate the hydrodynamic resistance in microchannels and show how speeding up a bubble train whilst preserving its spatial periodicity can lead to filtering at a nominally symmetric junction. We further show how such an asymmetric traffic of bubble trains can be triggered in symmetric geometries by identifying conditions wherein the resistance to flow decreases with an increase in the number of bubbles in the microchannel and derive an exact criterion to predict the same.

  9. Evaluation of the radiation resistance of high-density polyethylene

    International Nuclear Information System (INIS)

    Dougherty, D.R.; Adams, J.W.; Barletta, R.R.

    1984-03-01

    Mechanical tests following gamma irradiation and creep tests during irradiation have been conducted on high-density polyethylene (HDPE) to provide data to help assess the adequacy of this material for use in high integrity containers (HICs). Two types of HDPE, a highly cross-linked rotationally molded material and a non-cross-linked blow molded material, were used in these tests. Gamma-ray irradiations were performed at several dose rates in environments of air, Barnwell and Hanford backfill soils, and ion-exchange resins. The results of tensile and bend tests on these materials following irradiation are presented along with results on creep during irradiation. 8 references, 9 figures, 2 tables

  10. Abuse resistant high rate lithium/thionyl chloride cells

    Energy Technology Data Exchange (ETDEWEB)

    Surprenant, J.; Snuggerud, D.

    1982-08-01

    A compact, disc shaped lithium/thionyl chloride cell has been developed by Altus Corporation. The cell has a 6 Amphr capacity and is capable of high rate discharge at high voltage. Discharge data is presented over the range of 0.07 to 1.1 Amperes. The cell is operable over the temperature range of -40/sup 0/C to +70/sup 0/C, and has a 10 year shelf life at 20/sup 0/C. Safety features allow the cells to withstand fire, puncture, shock, spin, forced discharge or forced charge without dangerous reactions.

  11. Abuse resistant high rate lithium/thionyl chloride cells

    Science.gov (United States)

    Surprenant, J.; Snuggerud, D.

    A compact, disk shaped lithium/thionyl chloride cell has been developed. The cell has a 6 Amphr capacity and is capable of high rate discharge at high voltage. Discharge data are presented over the range of 0.07 to 1.1 amperes. The cell is operable over the temperature range of -40 C to +70 C, and has a 10 year shelf life at 20 C. Safety features allow the cells to withstand fire, puncture, shock, spin, forced discharge or forced charge without dangerous reactions.

  12. High dietary protein intake, reducing or eliciting insulin resistance?

    NARCIS (Netherlands)

    Rietman, A.; Schwarz, J.; Tome, D.; Kok, F.J.; Mensink, M.R.

    2014-01-01

    Dietary proteins have an insulinotropic effect and thus promote insulin secretion, which indeed leads to enhanced glucose clearance from the blood. In the long term, however, a high dietary protein intake is associated with an increased risk of type 2 diabetes. Moreover, branched-chain amino acids

  13. Summer freezing resistance: a critical filter for plant community assemblies in Mediterranean high mountains

    Directory of Open Access Journals (Sweden)

    David Sánchez Pescador

    2016-02-01

    Full Text Available Assessing freezing community response and whether freezing resistance is related to other functional traits is essential for understanding alpine community assemblages, particularly in Mediterranean environments where plants are exposed to freezing temperatures and summer droughts. Thus, we characterized the leaf freezing resistance of 42 plant species in 38 plots at Sierra de Guadarrama (Spain by measuring their ice nucleation temperature, freezing point (FP, and low-temperature damage (LT50, as well as determining their freezing resistance mechanisms (i.e., tolerance or avoidance. The community response to freezing was estimated for each plot as community weighted means (CWMs and functional diversity, and we assessed their relative importance with altitude. We established the relationships between freezing resistance, growth forms, and four key plant functional traits (i.e., plant height, specific leaf area, leaf dry matter content, and seed mass. There was a wide range of freezing resistance responses and more than in other alpine habitats. At the community level, the CWMs of FP and LT50 responded negatively to altitude, whereas the functional diversity of both traits increased with altitude. The proportion of freezing-tolerant species also increased with altitude. The ranges of FP and LT50 varied among growth forms, and only the leaf dry matter content correlated negatively with freezing-resistance traits. Summer freezing events represent important abiotic filters for assemblies of Mediterranean high mountain communities, as suggested by the CWMs. However, a concomitant summer drought constraint may also explain the high freezing resistance of species that thrive in these areas and the lower functional diversity of freezing resistance traits at lower altitudes. Leaves with high dry matter contents may maintain turgor at lower water potential and enhance drought tolerance in parallel to freezing resistance. This adaptation to drought seems to

  14. Nature of inhomogeneous states in superconducting junctions

    International Nuclear Information System (INIS)

    Ivlev, B.I.; Kopnin, N.B.

    1982-01-01

    A superconducting structure which arises in a superconducting film under a strong injection of a current through a tunnel junction is considered. If the current density in the film exceeds the critical Ginzburg-Landau value, an inhomogeneous resistive state with phase-slip centers can arise in it. This state is charcterized by the presence of regions with different chemical potentials of the Cooper pairs. These shifts of the pair chemical potential and the nonuniform structure of the order parameter may account for the so-called multigap states which have been observed experimentally

  15. Phase diagrams of particles with dissimilar patches: X-junctions and Y-junctions

    International Nuclear Information System (INIS)

    Tavares, J M; Teixeira, P I C

    2012-01-01

    We use Wertheim’s first-order perturbation theory to investigate the phase behaviour and the structure of coexisting fluid phases for a model of patchy particles with dissimilar patches (two patches of type A and f B patches of type B). A patch of type α = {A,B} can bond to a patch of type β = {A,B} in a volume v αβ , thereby decreasing the internal energy by ε αβ . We analyse the range of model parameters where AB bonds, or Y-junctions, are energetically disfavoured (ε AB AA /2) but entropically favoured (v AB ≫ v αα ), and BB bonds, or X-junctions, are energetically favoured (ε BB > 0). We show that, for low values of ε BB /ε AA , the phase diagram has three different regions: (i) close to the critical temperature a low-density liquid composed of long chains and rich in Y-junctions coexists with a vapour of chains; (ii) at intermediate temperatures there is coexistence between a vapour of short chains and a liquid of very long chains with X- and Y-junctions; (iii) at low temperatures an ideal gas coexists with a high-density liquid with all possible AA and BB bonds formed. It is also shown that in region (i) the liquid binodal is reentrant (its density decreases with decreasing temperature) for the lower values of ε BB /ε AA . The existence of these three regions is a consequence of the competition between the formation of X- and Y-junctions: X-junctions are energetically favoured and thus dominate at low temperatures, whereas Y-junctions are entropically favoured and dominate at higher temperatures. (paper)

  16. Method for making low-resistivity contacts to high T/sub c/ superconductors

    International Nuclear Information System (INIS)

    Ekin, J.W.; Panson, A.J.; Blankenship, B.A.

    1988-01-01

    A method for making low-resistivity contacts to high T/sub c/ superconductors has been developed, which has achieved contact surface resistivities less than 10 μΩ cm 2 at 76 K and does not require sample heating above ∼150 0 C. This is an upper limit for the contact resistivity obtained at high current densities up to 10 2 --10 3 A/cm 2 across the contact interface. At lower measuring current densities the contact resistivities were lower and the voltage-current curve was nonlinear, having a superconducting transition character. On cooling from 295 to 76 K, the contact resistivity decreased several times, in contrast to indium solder contacts where the resistivity increased on cooling. The contacts showed consistently low resistivity and little degradation when exposed to dry air over a four-month period and when repeatedly cycled between room temperature and 76 K. The contacts are formed by sputter depositing a layer of a noble metal-silver and gold were used-on a clean superconductor surface to protect the surface and serve as a contact pad. External connections to the contact pads have been made using both solder and wire-bonding techniques

  17. Abrasion Resistance of as-Cast High-Chromium Cast Iron

    Directory of Open Access Journals (Sweden)

    Pokusová Marcela

    2014-12-01

    Full Text Available High chromium cast irons are widely used as abrasion resistant materials. Their properties and wear resistance depend on carbides and on the nature of the matrix supporting these carbides. The paper presents test results of irons which contain (in wt.% 18-22 Cr and 2-5 C, and is alloyed by 1.7 Mo + 5 Ni + 2 Mn to improve the toughness. Tests showed as-cast irons with mostly austenitic matrix achieved hardness 36-53 HRC but their relative abrasion-resistance was higher than the tool steel STN 19436 heat treated on hardness 60 HRC.

  18. Highly uniform and reliable resistive switching characteristics of a Ni/WOx/p+-Si memory device

    Science.gov (United States)

    Kim, Tae-Hyeon; Kim, Sungjun; Kim, Hyungjin; Kim, Min-Hwi; Bang, Suhyun; Cho, Seongjae; Park, Byung-Gook

    2018-02-01

    In this paper, we investigate the resistive switching behavior of a bipolar resistive random-access memory (RRAM) in a Ni/WOx/p+-Si RRAM with CMOS compatibility. Highly unifrom and reliable bipolar resistive switching characteristics are observed by a DC voltage sweeping and its switching mechanism can be explained by SCLC model. As a result, the possibility of metal-insulator-silicon (MIS) structural WOx-based RRAM's application to Si-based 1D (diode)-1R (RRAM) or 1T (transistor)-1R (RRAM) structure is demonstrated.

  19. Resistive MHD studies of high-β-tokamak plasmas

    International Nuclear Information System (INIS)

    Lynch, V.E.; Carreras, B.A.; Hicks, H.R.; Holmes, J.A.; Garcia, L.

    1981-01-01

    Numerical calculations have been performed to study the MHD activity in high-β tokamaks such as ISX-B. These initial value calculations built on earlier low β techniques, but the β effects create several new numerical issues. These issues are discussed and resolved. In addition to time-stepping modules, our system of computer codes includes equilibrium solvers (used to provide an initial condition) and output modules, such as a magnetic field line follower and an X-ray diagnostic code. The transition from current driven modes at low β to predominantly pressure driven modes at high β is described. The nonlinear studies yield X-ray emissivity plots which are compared with experiment

  20. Investigation of corrosion resistance of alloys with high mechanical characteristics in some environments of food industry

    International Nuclear Information System (INIS)

    Tremoureux, Yves

    1978-01-01

    This research thesis aimed at improving knowledge in the field of stress-free corrosion of alloys with high mechanical characteristics in aqueous environments, at highlighting some necessary aspects of their behaviour during cleaning or disinfection, and at selecting alloys which possess a good stress-free corrosion resistance in view of a later investigation of their stress corrosion resistance. After a presentation of the metallurgical characteristics of high mechanical strength alloys and the report of a bibliographical study on corrosion resistance of these alloys, the author presents and discusses the results obtained in the study of a possible migration of metallic ions in a milk product which is submitted to a centrifugation, and of the corrosion resistance of selected alloys with respect to the different media they will be in contact with during ultra-centrifugation. The following alloys have been used in this research: Marval 18, Marphynox, Marval X12, 17-4PH steel, Inconel 718 [fr