Semi-polar GaN heteroepitaxy an high index Si-surfaces

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Hempel, Thomas; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg, FNW/IEP/AHE, Magdeburg (Germany)

2011-07-01

Due to the lack of GaN homosubstrates, the growth of GaN-based devices is usually performed on heterosubstrates as sapphire or SiC. These substrates are either insulating or expensive, and both unavailable in large diameters. Meanwhile, silicon can meet the requirements for a low price and thermally well conducting substrate and also enabling the integration of optoelectronic devices with Si-based electronics. Up to now, the good matching of hexagonal GaN with the three-fold symmetry of Si(111) greatly promotes the c-axis orientated growth of GaN on this surface plane. A large spontaneous and piezoelectric polarization oriented along the c-axis exists in such hexagonal structure leading to low efficiencies for thick quantum wells. The attention to the growth of non-polar or semi-polar GaN based epitaxial structures has been increased recently because of reducing the effect of the polarization fields in these growth directions. Therefore we studied semi-polar GaN epilayers grown by metalorganic vapor phase epitaxy on silicon substrates with different orientations from Si(211) to Si(711). We observed that AlN seeding layer growth time play a significant role in obtaining the different GaN texture.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

International Nuclear Information System (INIS)

Gao, Tao; Xu, Ruimin; Kong, Yuechan; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng

2015-01-01

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr 0.52 Ti 0.48 )-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g m -V g ) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric

Polarization-engineered GaN/InGaN/GaN tunnel diodes

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Nath, Digbijoy N.; Akyol, Fatih; Park, Pil Sung; Esposto, Michele; Rajan, Siddharth

2010-01-01

We report on the design and demonstration of polarization-engineered GaN/InGaN/GaN tunnel junction diodes with high current density and low tunneling turn-on voltage. Wentzel-Kramers-Brillouin calculations were used to model and design tunnel junctions with narrow band gap InGaN-based barrier layers. N-polar p-GaN/In 0.33 Ga 0.67 N/n-GaN heterostructure tunnel diodes were grown using molecular beam epitaxy. Efficient interband tunneling was achieved close to zero bias with a high current density of 118 A/cm 2 at a reverse bias of 1 V, reaching a maximum current density up to 9.2 kA/cm 2 . These results represent the highest current density reported in III-nitride tunnel junctions and demonstrate the potential of III-nitride tunnel devices for a broad range of optoelectronic and electronic applications.

Improved linearity in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with nonlinear polarization dielectric

Energy Technology Data Exchange (ETDEWEB)

Gao, Tao [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China); Xu, Ruimin [Fundamental Science on EHF Laboratory, University of Electronic Science and Technology of China (UESTC), Chengdu 611731 (China); Kong, Yuechan, E-mail: kycfly@163.com; Zhou, Jianjun; Kong, Cen; Dong, Xun; Chen, Tangsheng [Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Devices Institute, Nanjing 210016 (China)

2015-06-15

We demonstrate highly improved linearity in a nonlinear ferroelectric of Pb(Zr{sub 0.52}Ti{sub 0.48})-gated AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). Distinct double-hump feature in the transconductance-gate voltage (g{sub m}-V{sub g}) curve is observed, yielding remarkable enhancement in gate voltage swing as compared to MIS-HEMT with conventional linear gate dielectric. By incorporating the ferroelectric polarization into a self-consistent calculation, it is disclosed that in addition to the common hump corresponding to the onset of electron accumulation, the second hump at high current level is originated from the nonlinear polar nature of ferroelectric, which enhances the gate capacitance by increasing equivalent dielectric constant nonlinearly. This work paves a way for design of high linearity GaN MIS-HEMT by exploiting the nonlinear properties of dielectric.

Characterization of N-polar AlN in GaN/AlN/(Al,Ga)N heterostructures grown by metal-organic chemical vapor deposition

Science.gov (United States)

Li, Haoran; Mazumder, Baishakhi; Bonef, Bastien; Keller, Stacia; Wienecke, Steven; Speck, James S.; Denbaars, Steven P.; Mishra, Umesh K.

2017-11-01

In GaN/(Al,Ga)N high-electron-mobility transistors (HEMT), AlN interlayer between GaN channel and AlGaN barrier suppresses alloy scattering and significantly improves the electron mobility of the two-dimensional electron gas. While high concentrations of gallium were previously observed in Al-polar AlN interlayers grown by metal-organic chemical vapor deposition, the N-polar AlN (Al x Ga1-x N) films examined by atom probe tomography in this study exhibited aluminum compositions (x) equal to or higher than 95% over a wide range of growth conditions. The also investigated AlN interlayer in a N-polar GaN/AlN/AlGaN/ S.I. GaN HEMT structure possessed a similarly high x content.

Application of polarization in high speed, high contrast inspection

Science.gov (United States)

Novak, Matthew J.

2017-08-01

Industrial optical inspection often requires high speed and high throughput of materials. Engineers use a variety of techniques to handle these inspection needs. Some examples include line scan cameras, high speed multi-spectral and laser-based systems. High-volume manufacturing presents different challenges for inspection engineers. For example, manufacturers produce some components in quantities of millions per month, per week or even per day. Quality control of so many parts requires creativity to achieve the measurement needs. At times, traditional vision systems lack the contrast to provide the data required. In this paper, we show how dynamic polarization imaging captures high contrast images. These images are useful for engineers to perform inspection tasks in some cases where optical contrast is low. We will cover basic theory of polarization. We show how to exploit polarization as a contrast enhancement technique. We also show results of modeling for a polarization inspection application. Specifically, we explore polarization techniques for inspection of adhesives on glass.

Enhanced mobility in vertically scaled N-polar high-electron-mobility transistors using GaN/InGaN composite channels

Science.gov (United States)

Li, Haoran; Wienecke, Steven; Romanczyk, Brian; Ahmadi, Elaheh; Guidry, Matthew; Zheng, Xun; Keller, Stacia; Mishra, Umesh K.

2018-02-01

A GaN/InGaN composite channel design for vertically scaled N-polar high-electron-mobility transistor (HEMT) structures is proposed and demonstrated by metal-organic chemical vapor deposition. In a conventional N-polar HEMT structure, as the channel thickness (tch) decreases, the sheet charge density (ns) decreases, the electric field in the channel increases, and the centroid of the two-dimensional electron gas (2DEG) moves towards the back-barrier/channel interface, resulting in stronger scattering and lower electron mobility (μ). In this study, a thin InGaN layer was introduced in-between the channel and the AlGaN cap to increase the 2DEG density and reduce the electric field in the channel and therefore increase the electron mobility. The dependence of μ on the InGaN thickness (tInGaN) and the indium composition (xIn) was investigated for different channel thicknesses. With optimized tInGaN and xIn, significant improvements in electron mobility were observed. For a 6 nm channel HEMT structure, the electron mobility increased from 606 to 1141 cm2/(V.s) when the 6 nm thick pure GaN channel was replaced by the 4 nm GaN/2 nm In0.1Ga0.9N composite channel.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long

2018-05-03

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Polarization-induced hole doping in N-polar III-nitride LED grown by metalorganic chemical vapor deposition

KAUST Repository

Yan, Long; Zhang, Yuantao; Han, Xu; Deng, Gaoqiang; Li, Pengchong; Yu, Ye; Chen, Liang; Li, Xiaohang; Song, Junfeng

2018-01-01

Polarization-induced doping has been shown to be effective for wide-bandgap III-nitrides. In this work, we demonstrated a significantly enhanced hole concentration via linearly grading an N-polar AlxGa1-xN (x = 0–0.3) layer grown by metal-organic chemical vapor deposition. The hole concentration increased by ∼17 times compared to that of N-polar p-GaN at 300 K. The fitting results of temperature-dependent hole concentration indicated that the holes in the graded p-AlGaN layer comprised both polarization-induced and thermally activated ones. By optimizing the growth conditions, the hole concentration was further increased to 9.0 × 1017 cm−3 in the graded AlGaN layer. The N-polar blue-violet light-emitting device with the graded p-AlGaN shows stronger electroluminescence than the one with the conventional p-GaN. The study indicates the potential of the polarization doping technique in high-performance N-polar light-emitting devices.

Enhanced polarization of (11–22) semi-polar InGaN nanorod array structure

Energy Technology Data Exchange (ETDEWEB)

Athanasiou, M.; Smith, R. M.; Hou, Y.; Zhang, Y.; Gong, Y.; Wang, T., E-mail: t.wang@sheffield.ac.uk [Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield S1 3JD (United Kingdom)

2015-10-05

By means of a cost effective nanosphere lithography technique, an InGaN/GaN multiple quantum well structure grown on (11–22) semipolar GaN has been fabricated into two dimensional nanorod arrays which form a photonic crystal (PhC) structure. Such a PhC structure demonstrates not only significantly increased emission intensity, but also an enhanced polarization ratio of the emission. This is due to an effective inhibition of the emission in slab modes and then redistribution to the vertical direction, thus minimizing the light scattering processes that lead to randomizing of the optical polarization. The PhC structure is designed based on a standard finite-difference-time-domain simulation, and then optically confirmed by detailed time-resolved photoluminescence measurements. The results presented pave the way for the fabrication of semipolar InGaN/GaN based emitters with both high efficiency and highly polarized emission.

Enhanced polarization of (11–22) semi-polar InGaN nanorod array structure

International Nuclear Information System (INIS)

Athanasiou, M.; Smith, R. M.; Hou, Y.; Zhang, Y.; Gong, Y.; Wang, T.

2015-01-01

By means of a cost effective nanosphere lithography technique, an InGaN/GaN multiple quantum well structure grown on (11–22) semipolar GaN has been fabricated into two dimensional nanorod arrays which form a photonic crystal (PhC) structure. Such a PhC structure demonstrates not only significantly increased emission intensity, but also an enhanced polarization ratio of the emission. This is due to an effective inhibition of the emission in slab modes and then redistribution to the vertical direction, thus minimizing the light scattering processes that lead to randomizing of the optical polarization. The PhC structure is designed based on a standard finite-difference-time-domain simulation, and then optically confirmed by detailed time-resolved photoluminescence measurements. The results presented pave the way for the fabrication of semipolar InGaN/GaN based emitters with both high efficiency and highly polarized emission

Semi-polar GaN materials technology for high IQE green LEDs.

Energy Technology Data Exchange (ETDEWEB)

Koleske, Daniel; Lee, Stephen Roger; Crawford, Mary H; Coltrin, Michael Elliott; Fini, Paul

2013-06-01

The goal of this NETL funded program was to improve the IQE in green (and longer wavelength) nitride- based LEDs structures by using semi-polar GaN planar orientations for InGaN multiple quantum well (MQW) growth. These semi-polar orientations have the advantage of significantly reducing the piezoelectric fields that distort the QW band structure and decrease electron-hole overlap. In addition, semipolar surfaces potentially provide a more open surface bonding environment for indium incorporation, thus enabling higher indium concentrations in the InGaN MQW. The goal of the proposed work was to select the optimal semi-polar orientation and explore wafer miscuts around this orientation that produced the highest quantum efficiency LEDs. At the end of this program we had hoped to have MQWs active regions at 540 nm with an IQE of 50% and an EQE of 40%, which would be approximately twice the estimated current state-of-the-art.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

International Nuclear Information System (INIS)

Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

2015-01-01

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun [Department of Applied Physics, National University of Kaohsiung, No. 700, Kaohsiung University Rd., Nan Tzu Dist., 811 Kaohsiung, Taiwan (China); Leung, Benjamin; Han, Jung [Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520 (United States); Yang, Fann-Wei [Department of Electronic Engineering, Southern Taiwan University of Science and Technology, Tainan, Taiwan (China); Wang, Hsiang-Chen [Graduate Institute of Opto-Mechatronics and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chia-Yi, Taiwan (China)

2015-07-28

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

Science.gov (United States)

Tangi, Malleswararao; Mishra, Pawan; Janjua, Bilal; Prabaswara, Aditya; Zhao, Chao; Priante, Davide; Min, Jung-Wook; Ng, Tien Khee; Ooi, Boon S.

2018-03-01

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes

KAUST Repository

Tangi, Malleswararao

2018-03-09

We study the impact of quantum-confined stark effect (QCSE) on bias dependent micro-photoluminescence emission of the quantum disk (Q-disk) based nanowires light emitting diodes (NWs-LED) exhibiting the amber colored emission. The NWs are found to be nitrogen polar (N-polar) verified using KOH wet chemical etching and valence band spectrum analysis of high-resolution X-ray photoelectron spectroscopy. The crystal structure and quality of the NWs were investigated by high-angle annular dark field - scanning transmission electron microscopy. The LEDs were fabricated to acquire the bias dependent micro-photoluminescence spectra. We observe a redshift and a blueshift of the μPL peak in the forward and reverse bias conditions, respectively, with reference to zero bias, which is in contrast to the metal-polar InGaN well-based LEDs in the literature. Such opposite shifts of μPL peak emission observed for N-polar NWs-LEDs, in our study, are due to the change in the direction of the internal piezoelectric field. The quenching of PL intensity, under the reverse bias conditions, is ascribed to the reduction of electron-hole overlap. Furthermore, the blueshift of μPL emission with increasing excitation power reveals the suppression of QCSE resulting from the photo-generated carriers. Thereby, our study confirms the presence of QCSE for NWs-LEDs from both bias and power dependent μPL measurements. Thus, this study serves to understand the QCSE in N-polar InGaN Q-disk NWs-LEDs and other related wide-bandgap nitride nanowires, in general.

Mg Incorporation Efficiency in Pulsed MOCVD of N-Polar GaN:Mg

Science.gov (United States)

Marini, Jonathan; Mahaboob, Isra; Hogan, Kasey; Novak, Steve; Bell, L. D.; Shahedipour-Sandvik, F.

2017-10-01

We report on the effect of growth polarity and pulsed or δ -doped growth mode on impurity incorporation in metalorganic chemical vapor deposition-grown GaN. In Ga-polar orientation, up to 12× enhancement in Mg concentration for given Mg flow rate is observed, resulting in enhanced p-type conductivity for these samples. In contrast, this enhancement effect is greatly diminished for N-polar samples, falling off with increasing Mg flow and showing maximum enhancement of 2.7× at 30 nmol/min Mg flow. At higher Mg flow rates, Mg incorporation at normal levels did not correspond to p-type conductivity, which may be due to Mg incorporation at nonacceptor sites. Concentrations of C, O, and Si were also investigated, revealing dependence on Mg flow in N-polar pulsed samples. Carbon incorporation was found to decrease with increasing Mg flow, and oxygen incorporation was found to remain high across varied Mg flow. These effects combine to result in N-polar samples that are not p-type when using the pulsed growth mode.

AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistor with Polarized P(VDF-TrFE) Ferroelectric Polymer Gating

Science.gov (United States)

Liu, Xinke; Lu, Youming; Yu, Wenjie; Wu, Jing; He, Jiazhu; Tang, Dan; Liu, Zhihong; Somasuntharam, Pannirselvam; Zhu, Deliang; Liu, Wenjun; Cao, Peijiang; Han, Sun; Chen, Shaojun; Seow Tan, Leng

2015-01-01

Effect of a polarized P(VDF-TrFE) ferroelectric polymer gating on AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) was investigated. The P(VDF-TrFE) gating in the source/drain access regions of AlGaN/GaN MOS-HEMTs was positively polarized (i.e., partially positively charged hydrogen were aligned to the AlGaN surface) by an applied electric field, resulting in a shift-down of the conduction band at the AlGaN/GaN interface. This increases the 2-dimensional electron gas (2-DEG) density in the source/drain access region of the AlGaN/GaN heterostructure, and thereby reduces the source/drain series resistance. Detailed material characterization of the P(VDF-TrFE) ferroelectric film was also carried out using the atomic force microscopy (AFM), X-ray Diffraction (XRD), and ferroelectric hysteresis loop measurement. PMID:26364872

Topical Review: Development of overgrown semi-polar GaN for high efficiency green/yellow emission

Science.gov (United States)

Wang, T.

2016-09-01

The most successful example of large lattice-mismatched epitaxial growth of semiconductors is the growth of III-nitrides on sapphire, leading to the award of the Nobel Prize in 2014 and great success in developing InGaN-based blue emitters. However, the majority of achievements in the field of III-nitride optoelectronics are mainly limited to polar GaN grown on c-plane (0001) sapphire. This polar orientation poses a number of fundamental issues, such as reduced quantum efficiency, efficiency droop, green and yellow gap in wavelength coverage, etc. To date, it is still a great challenge to develop longer wavelength devices such as green and yellow emitters. One clear way forward would be to grow III-nitride device structures along a semi-/non-polar direction, in particular, a semi-polar orientation, which potentially leads to both enhanced indium incorporation into GaN and reduced quantum confined Stark effects. This review presents recent progress on developing semi-polar GaN overgrowth technologies on sapphire or Si substrates, the two kinds of major substrates which are cost-effective and thus industry-compatible, and also demonstrates the latest achievements on electrically injected InGaN emitters with long emission wavelengths up to and including amber on overgrown semi-polar GaN. Finally, this review presents a summary and outlook on further developments for semi-polar GaN based optoelectronics.

Dependence of InGaN solar cell performance on polarization-induced electric field and carrier lifetime

International Nuclear Information System (INIS)

Yang Jing; Zhao De-Gang; Jiang De-Sheng; Liu Zong-Shun; Chen Ping; Li Liang; Wu Liang-Liang; Le Ling-Cong; Li Xiao-Jing; He Xiao-Guang; Yang Hui; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun

2013-01-01

The effects of Mg-induced net acceptor doping concentration and carrier lifetime on the performance of a p—i—n InGaN solar cell are investigated. It is found that the electric field induced by spontaneous and piezoelectric polarization in the i-region could be totally shielded when the Mg-induced net acceptor doping concentration is sufficiently high. The polarization-induced potential barriers are reduced and the short circuit current density is remarkably increased from 0.21 mA/cm 2 to 0.95 mA/cm 2 by elevating the Mg doping concentration. The carrier lifetime determined by defect density of i-InGaN also plays an important role in determining the photovoltaic properties of solar cell. The short circuit current density severely degrades, and the performance of InGaN solar cell becomes more sensitive to the polarization when carrier lifetime is lower than the transit time. This study demonstrates that the crystal quality of InGaN absorption layer is one of the most important challenges in realizing high efficiency InGaN solar cells. (interdisciplinary physics and related areas of science and technology)

Polarization Raman spectroscopy of GaN nanorod bundles

International Nuclear Information System (INIS)

Tite, T.; Lee, C. J.; Chang, Y.-M.

2010-01-01

We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.

Step-flow growth mode instability of N-polar GaN under N-excess

International Nuclear Information System (INIS)

Chèze, C.; Sawicka, M.; Siekacz, M.; Łucznik, B.; Boćkowski, M.; Skierbiszewski, C.; Turski, H.; Cywiński, G.; Smalc-Koziorowska, J.; Weyher, J. L.; Kryśko, M.

2013-01-01

GaN layers were grown on N-polar GaN substrates by plasma-assisted molecular beam epitaxy under different III/V ratios. Ga-rich conditions assure step-flow growth with atomically flat surface covered by doubly-bunched steps, as for Ga-polar GaN. Growth under N-excess however leads to an unstable step-flow morphology. Particularly, for substrates slightly miscut towards , interlacing fingers are covered by atomic steps pinned on both sides by small hexagonal pits. In contrast, a three-dimensional island morphology is observed on the Ga-polar equivalent sample. We attribute this result to lower diffusion barriers on N-polar compared to Ga-polar GaN under N-rich conditions

Dual-polarization wavelength conversion of 16-QAM signals in a single silicon waveguide with a lateral p-i-n diode [Invited

DEFF Research Database (Denmark)

Da Ros, Francesco; Gajda, Andrzej; Liebig, Erik

2018-01-01

with an optical signal-to-noise ratio penalty below 0.7 dB. High-quality converted signals are generated thanks to the low polarization dependence (≤0.5 dB) and the high conversion efficiency (CE) achievable. The strong Kerr nonlinearity in silicon and the decrease of detrimental free-carrier absorption due......A polarization-diversity loop with a silicon waveguide with a lateral p-i-n diode as a nonlinear medium is used to realize polarization insensitive four-wave mixing. Wavelength conversion of seven dual-polarization 16-quadrature amplitude modulation (QAM) signals at 16 GBd is demonstrated...

The atomic structure of polar and non-polar InGaN quantum wells and the green gap problem

Energy Technology Data Exchange (ETDEWEB)

Humphreys, C.J., E-mail: colin.humphreys@msm.cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Griffiths, J.T., E-mail: jg641@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Tang, F., E-mail: ft274@cam.ac.uk [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom); Oehler, F., E-mail: fabrice.oehler@lpn.cnrs.fr [CNRS/C2N, Paris Sud University, Route de Nozay, 91460 Marcoussis (France); Findlay, S.D., E-mail: scott.findlay@monash.edu [School of Physics and Astronomy, Monash University, Victoria 3800 (Australia); Zheng, C., E-mail: changlin.zheng@monash.edu [Monash Centre for Electron Microscopy, Monash University, Victoria 3800 (Australia); Etheridge, J., E-mail: joanne.etheridge@mcem.monash.edu [Department of Materials Science and Engineering, Monash University, Victoria 3800 (Australia); Martin, T.L., E-mail: tomas.martin@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Bagot, P.A.J., E-mail: paul.bagot@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Moody, M.P., E-mail: michael.moody@materials.ox.ac.uk [Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH (United Kingdom); Sutherland, D., E-mail: danny.sutherland@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Dawson, P., E-mail: philip.dawson@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S., E-mail: stefan.schulz@tyndall.ie [Tyndall National Institute, Lee Maltings Complex, Dyke Parade, Cork (Ireland); and others

2017-05-15

Highlights: • We have studied the atomic structure of polar and non-polar InGaN quantum wells. • The non-polar (11-20) InGaN quantum wells contain indium-rich clusters, unlike the polar (0001) quantum wells. • The electrons and holes in the quantum wells are localised by different mechanisms. - Abstract: We have used high resolution transmission electron microscopy (HRTEM), aberration-corrected quantitative scanning transmission electron microscopy (Q-STEM), atom probe tomography (APT) and X-ray diffraction (XRD) to study the atomic structure of (0001) polar and (11-20) non-polar InGaN quantum wells (QWs). This paper provides an overview of the results. Polar (0001) InGaN in QWs is a random alloy, with In replacing Ga randomly. The InGaN QWs have atomic height interface steps, resulting in QW width fluctuations. The electrons are localised at the top QW interface by the built-in electric field and the well-width fluctuations, with a localisation energy of typically 20 meV. The holes are localised near the bottom QW interface, by indium fluctuations in the random alloy, with a localisation energy of typically 60 meV. On the other hand, the non-polar (11-20) InGaN QWs contain nanometre-scale indium-rich clusters which we suggest localise the carriers and produce longer wavelength (lower energy) emission than from random alloy non-polar InGaN QWs of the same average composition. The reason for the indium-rich clusters in non-polar (11-20) InGaN QWs is not yet clear, but may be connected to the lower QW growth temperature for the (11-20) InGaN QWs compared to the (0001) polar InGaN QWs.

Inducing elliptically polarized high-order harmonics from aligned molecules with linearly polarized femtosecond pulses

DEFF Research Database (Denmark)

Etches, Adam; Madsen, Christian Bruun; Madsen, Lars Bojer

2010-01-01

A recent paper reported elliptically polarized high-order harmonics from aligned N2 using a linearly polarized driving field [X. Zhou et al., Phys. Rev. Lett. 102, 073902 (2009)]. This observation cannot be explained in the standard treatment of the Lewenstein model and has been ascribed to many...

Polarity analysis of GaN nanorods by photo-assisted Kelvin probe force microscopy

Energy Technology Data Exchange (ETDEWEB)

Wei, Jiandong; Neumann, Richard; Wang, Xue; Li, Shunfeng; Fuendling, Soenke; Merzsch, Stephan; Al-Suleiman, Mohamed A.M.; Soekmen, Uensal; Wehmann, Hergo-H.; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany)

2011-07-15

Polarity dependence (N-polar (000-1) and Ga-polar (0001)) of surface photovoltage of epitaxially grown, vertically aligned GaN nanorods has been investigated by photo-assisted Kelvin probe force microscopy (KPFM). Commercial GaN substrates with known polarities are taken as reference samples. The polarity of GaN substrates can be well distinguished by the change in surface photovoltage upon UV illumination in air ambient. These different behaviors of Ga- and N-polar surfaces are attributed to the polarity-related surface-bound charges and photochemical reactivity. GaN nanorods were grown on patterned SiO{sub 2}/sapphire templates by metal-organic vapor phase epitaxy (MOVPE). In order to analyze the bottom surface of the grown GaN nanorods, a technique known from high power electronics and joining techniques is applied to remove the substrate. The top and bottom surfaces of the GaN nanorods are identified to be N-polar and Ga-polar according to the KPFM results, respectively. Our experiments demonstrate that KPFM is a simple and suitable method capable to identify the polarity of GaN nanorods. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Different Polar Metabolites and Protein Profiles between High- and Low-Quality Japanese Ginjo Sake.

Directory of Open Access Journals (Sweden)

Kei Takahashi

Full Text Available Japanese ginjo sake is a premium refined sake characterized by a pleasant fruity apple-like flavor and a sophisticated taste. Because of technical difficulties inherent in brewing ginjo sake, off-flavors sometimes occur. However, the metabolites responsible for off-flavors as well as those present or absent in higher quality ginjo sake remain uncertain. Here, the relationship between 202 polar chemical compounds in sake identified using capillary electrophoresis coupled with time-of-flight mass spectrometry and its organoleptic properties, such as quality and off-flavor, was examined. First, we found that some off-flavored sakes contained higher total amounts of metabolites than other sake samples. The results also identified that levels of 2-oxoglutaric acid and fumaric acid, metabolites in the tricarboxylic acid cycle, were highly but oppositely correlated with ginjo sake quality. Similarly, pyridoxine and pyridoxamine, co-enzymes for amino transferase, were also highly but oppositely correlated with ginjo sake quality. Additionally, pyruvic acid levels were associated with good quality as well. Compounds involved in the methionine salvage cycle, oxidative glutathione derivatives, and amino acid catabolites were correlated with low quality. Among off-flavors, an inharmonious bitter taste appeared attributable to polyamines. Furthermore, protein analysis displayed that a diversity of protein components and yeast protein (triosephosphate isomerase, TPI leakage was linked to the overall metabolite intensity in ginjo sake. This research provides insight into the relationship between sake components and organoleptic properties.

Rode's iterative calculation of surface optical phonon scattering limited electron mobility in N-polar GaN devices

International Nuclear Information System (INIS)

Ghosh, Krishnendu; Singisetti, Uttam

2015-01-01

N-polar GaN channel mobility is important for high frequency device applications. Here, we report theoretical calculations on the surface optical (SO) phonon scattering rate of two-dimensional electron gas (2DEG) in N-polar GaN quantum well channels with high-k dielectrics. Rode's iterative calculation is used to predict the scattering rate and mobility. Coupling of the GaN plasmon modes with the SO modes is taken into account and dynamic screening is employed under linear polarization response. The effect of SO phonons on 2DEG mobility was found to be small at >5 nm channel thickness. However, the SO mobility in 3 nm N-polar GaN channels with HfO 2 and ZrO 2 high-k dielectrics is low and limits the total mobility. The SO scattering for SiN dielectric on GaN was found to be negligible due to its high SO phonon energy. Using Al 2 O 3 , the SO phonon scattering does not affect mobility significantly only except the case when the channel is too thin with a low 2DEG density

Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 °C

Science.gov (United States)

Chèze, C.; Feix, F.; Lähnemann, J.; Flissikowski, T.; Kryśko, M.; Wolny, P.; Turski, H.; Skierbiszewski, C.; Brandt, O.

2018-01-01

Previously, we found that N-polar (In,Ga)N/GaN quantum wells prepared on freestanding GaN substrates by plasma-assisted molecular beam epitaxy at conventional growth temperatures of about 650 °C do not exhibit any detectable luminescence even at 10 K. In the present work, we investigate (In,Ga)N/GaN quantum wells grown on Ga- and N-polar GaN substrates at a constant temperature of 730 °C . This exceptionally high temperature results in a vanishing In incorporation for the Ga-polar sample. In contrast, quantum wells with an In content of 20% and abrupt interfaces are formed on N-polar GaN. Moreover, these quantum wells exhibit a spatially uniform green luminescence band up to room temperature, but the intensity of this band is observed to strongly quench with temperature. Temperature-dependent photoluminescence transients show that this thermal quenching is related to a high density of nonradiative Shockley-Read-Hall centers with large capture coefficients for electrons and holes.

A comparative study on MOVPE InN grown on Ga- and N-polarity bulk GaN

International Nuclear Information System (INIS)

Wang, W.J.; Miwa, H.; Hashimoto, A.; Yamamoto, A.

2006-01-01

The influence of substrate polarity on the growth of InN film by MOVPE was investigated using bulk GaN as a substrate. Single-crystalline In- and N-polarity InN films were obtained on Ga- and N-polarity GaN substrate, respectively. Significant difference of the morphologies between the In- and N-polarity InN films was found. For the In-polarity InN film, the morphology was similar to that grown on sapphire substrate. The film surface was consisted of grains with small facets. In contrast, for the N-polarity InN film, the surface was consisted of large hexagonal shape crystal grains with flat surface. The grain size was about 2 μm in diameter on the average, and two-dimensional growth was enhanced obviously for each crystal grain. The influence of the growth temperature on the morphology, polarity, and optical property was also investigated. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

KAUST Repository

Sun, Haiding; Wu, Feng; Altahtamouni, Talal Mohammed Ahmad; Alfaraj, Nasir; Li, Kun; Detchprohm, Theeradetch; Dupuis, Russell; Li, Xiaohang

2017-01-01

The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

Structural properties, crystal quality and growth modes of MOCVD-grown AlN with TMAl pretreatment of sapphire substrate

KAUST Repository

Sun, Haiding

2017-08-08

The growth of high quality AlN epitaxial films relies on precise control of the initial growth stages. In this work, we examined the influence of the trimethylaluminum (TMAl) pretreatment of sapphire substrates on the structural properties, crystal quality and growth modes of heteroepitaxial AlN films on (0001) sapphire substrates. Without the pretreatment, the AlN films nucleated on the smooth surface but exhibited mixed crystallographic Al- (N-) polarity, resulting in rough AlN film surfaces. With increasing the pretreatment time from 1 to 5 s, the N-polarity started to be impeded. However, small islands were formed on sapphire surface due to the decompostion of TMAl. As a result, small voids became noticeable at the nucleation layer (NL) because the growth started as quasi three-dimensional (3D) but transformed to 2D mode as the film grew thicker and got coalesced, leading to smoother and Al-polar films. On the other hand, longer pretreatment time of 40 s formed large 3D islands on sapphire, and thus initiated a 3D-growth mode of the AlN film, generating Al-polar AlN nanocolumns with different facets, which resulted into rougher film surfaces. The epitaxial growth modes and their correlation with the AlN film crystal quality under different TMAl pretreatments are also discussed.

InN{0001} polarity by ion scattering spectroscopy

International Nuclear Information System (INIS)

Walker, M.; Veal, T.D.; McConville, C.F.; Lu, Hai; Schaff, W.J.

2005-01-01

The polarity of a wurtzite InN thin film grown on a c-plane sapphire substrate with GaN and AlN buffer layers has been investigated by co-axial impact collision ion scattering spectroscopy (CAICISS). Time of flight (TOF) spectra of He + ions scattered from the surface of the InN film were taken as a function of the incident angles of the primary 3 keV He + ions. From the TOF spectra, the polar angle-dependence of the In scattered intensity was obtained. Comparison of the experimental polar-angle dependence of the In CAICISS signal intensity with simulated results for the various volume ratios of (0001)- and (000 anti 1)-polarity domains indicated that the InN film is approximately 75% In-polarity and 25% N-polarity. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-quality GaN epitaxially grown on Si substrate with serpentine channels

Science.gov (United States)

Wei, Tiantian; Zong, Hua; Jiang, Shengxiang; Yang, Yue; Liao, Hui; Xie, Yahong; Wang, Wenjie; Li, Junze; Tang, Jun; Hu, Xiaodong

2018-06-01

A novel serpentine-channeled mask was introduced to Si substrate for low-dislocation GaN epitaxial growth and the fully coalesced GaN film on the masked Si substrate was achieved for the first time. Compared with the epitaxial lateral overgrowth (ELOG) growth method, this innovative mask only requires one-step epitaxial growth of GaN which has only one high-dislocation region per mask opening. This new growth method can effectively reduce dislocation density, thus improving the quality of GaN significantly. High-quality GaN with low dislocation density ∼2.4 × 107 cm-2 was obtained, which accounted for about eighty percent of the GaN film in area. This innovative technique is promising for the growth of high-quality GaN templates and the subsequent fabrication of high-performance GaN-based devices like transistors, laser diodes (LDs), and light-emitting diodes (LEDs) on Si substrate.

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Science.gov (United States)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2014-09-01

Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm-2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

Luminescence of highly excited nonpolar a-plane GaN and AlGaN/GaN multiple quantum wells

International Nuclear Information System (INIS)

Jursenas, S.; Kuokstis, E.; Miasojedovas, S.; Kurilcik, G.; Zukauskas, A.; Chen, C.Q.; Yang, J.W.; Adivarahan, V.; Asif Khan, M.

2004-01-01

Carrier recombination dynamics in polar and nonpolar GaN epilayers and GaN/AlGaN multiple quantum wells grown over sapphire substrates with a various crystallographic orientation were studied under high photoexcitation by 20 ps laser pulses. The transient luminescence featured a significant enhancement on nonradiative recombination of free carriers for nonpolar a-plane GaN epilayers compared to conventional c-plane samples. The epitaxial layer overgrowth technique was demonstrated to significantly improve the quality of nonpolar a-plane films. This was proved by more than 40-fold increase in luminescence decay time (430 ps compared to ≤ 10 ps in the ordinary a-plane epilayer). Under high-excitation regime, a complete screening of built-in electric field by free carriers in multiple quantum wells grown on c-plane and r-plane sapphire substrates was achieved. Under such high excitation, luminescence efficiency and carrier lifetime of multiple quantum wells were shown to be determined by the substrate quality. (author)

Non-polar InGaN quantum dot emission with crystal-axis oriented linear polarization

Energy Technology Data Exchange (ETDEWEB)

Reid, Benjamin P. L., E-mail: benjamin.reid@physics.ox.ac.uk; Chan, Christopher C. S.; Taylor, Robert A. [Clarendon Laboratory, Department of Physics, University of Oxford, Oxford OX1 3PU (United Kingdom); Kocher, Claudius [Department of Physics, University of Konstanz, Konstanz 78457 (Germany); Zhu, Tongtong; Oehler, Fabrice; Oliver, Rachel A. [Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS (United Kingdom)

2015-04-27

Polarization sensitive photoluminescence is performed on single non-polar InGaN quantum dots. The studied InGaN quantum dots are found to have linearly polarized emission with a common polarization direction defined by the [0001] crystal axis. Around half of ∼40 studied dots have a polarization degree of 1. For those lines with a polarization degree less than 1, we can resolve fine structure splittings between −800 μeV and +800 μeV, with no clear correlation between fine structure splitting and emission energy.

Advances in high power linearly polarized fiber laser and its application

Science.gov (United States)

Zhou, Pu; Huang, Long; Ma, Pengfei; Xu, Jiangming; Su, Rongtao; Wang, Xiaolin

2017-10-01

Fiber lasers are now attracting more and more research interest due to their advantages in efficiency, beam quality and flexible operation. Up to now, most of the high power fiber lasers have random distributed polarization state. Linearlypolarized (LP) fiber lasers, which could find wide application potential in coherent detection, coherent/spectral beam combining, nonlinear frequency conversion, have been a research focus in recent years. In this paper, we will present a general review on the achievements of various kinds of high power linear-polarized fiber laser and its application. The recent progress in our group, including power scaling by using power amplifier with different mechanism, high power linearly polarized fiber laser with diversified properties, and various applications of high power linear-polarized fiber laser, are summarized. We have achieved 100 Watt level random distributed feedback fiber laser, kilowatt level continuous-wave (CW) all-fiber polarization-maintained fiber amplifier, 600 watt level average power picosecond polarization-maintained fiber amplifier and 300 watt level average power femtosecond polarization-maintained fiber amplifier. In addition, high power linearly polarized fiber lasers have been successfully applied in 5 kilowatt level coherent beam combining, structured light field and ultrasonic generation.

Polarization and ellipticity of high-order harmonics from aligned molecules generated by linearly polarized intense laser pulses

International Nuclear Information System (INIS)

Le, Anh-Thu; Lin, C. D.; Lucchese, R. R.

2010-01-01

We present theoretical calculations for polarization and ellipticity of high-order harmonics from aligned N 2 , CO 2 , and O 2 molecules generated by linearly polarized lasers. Within the rescattering model, the two polarization amplitudes of the harmonics are determined by the photo-recombination amplitudes for photons emitted with polarization parallel or perpendicular to the direction of the same returning electron wave packet. Our results show clear species-dependent polarization states, in excellent agreement with experiments. We further note that the measured polarization ellipse of the harmonic furnishes the needed parameters for a 'complete' experiment in molecules.

Effects of Thickness of a Low-Temperature Buffer and Impurity Incorporation on the Characteristics of Nitrogen-polar GaN.

Science.gov (United States)

Yang, Fann-Wei; Chen, Yu-Yu; Feng, Shih-Wei; Sun, Qian; Han, Jung

2016-12-01

In this study, effects of the thickness of a low temperature (LT) buffer and impurity incorporation on the characteristics of Nitrogen (N)-polar GaN are investigated. By using either a nitridation or thermal annealing step before the deposition of a LT buffer, three N-polar GaN samples with different thicknesses of LT buffer and different impurity incorporations are prepared. It is found that the sample with the thinnest LT buffer and a nitridation step proves to be the best in terms of a fewer impurity incorporations, strong PL intensity, fast mobility, small biaxial strain, and smooth surface. As the temperature increases at ~10 K, the apparent donor-acceptor-pair band is responsible for the decreasing integral intensity of the band-to-band emission peak. In addition, the thermal annealing of the sapphire substrates may cause more impurity incorporation around the HT-GaN/LT-GaN/sapphire interfacial regions, which in turn may result in a lower carrier mobility, larger biaxial strain, larger bandgap shift, and stronger yellow luminescence. By using a nitridation step, both a thinner LT buffer and less impurity incorporation are beneficial to obtaining a high quality N-polar GaN.

Wurtzite BAlN and BGaN alloys for heterointerface polarization engineering

KAUST Repository

Liu, Kaikai

2017-11-30

The spontaneous polarization (SP) and piezoelectric (PZ) constants of BxAl1-xN and BxGa1-xN (0 ≤ x ≤ 1) ternary alloys were calculated with the hexagonal structure as reference. The SP constants show moderate nonlinearity due to the volume deformation and the dipole moment difference between the hexagonal and wurtzite structures. The PZ constants exhibit significant bowing because of the large lattice difference between binary alloys. Furthermore, the PZ constants of BxAl1-xN and BxGa1-xN become zero at boron compositions of ∼87% and ∼74%, respectively, indicating non-piezoelectricity. The large range of SP and PZ constants of BxAl1-xN (BAlN) and BxGa1-xN (BGaN) can be beneficial for the compound semiconductor device development. For instance, zero heterointerface polarization ΔP can be formed for BAlN and BGaN based heterojunctions with proper B compositions, potentially eliminating the quantum-confined Stark effect for c-plane optical devices and thus removing the need of non-polar layers and substrates. Besides, large heterointerface polarization ΔP is available that is desirable for electronic devices.

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

International Nuclear Information System (INIS)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H.

2014-01-01

Optical properties of GaN/Al 0.2 Ga 0.8 N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 10 12 cm −2 and a radiative recombination time of τ loc  = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers

Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B. [CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Université Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Izyumskaya, N.; Monavarian, M.; Zhang, F.; Okur, S.; Avrutin, V.; Özgür, Ü.; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23238 (United States)

2014-09-07

Optical properties of GaN/Al{sub 0.2}Ga{sub 0.8}N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 10{sup 12} cm{sup −2} and a radiative recombination time of τ{sub loc} = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

Impact of AlN seeding layer growth rate in MOVPE growth of semi-polar gallium nitride structures on high index silicon

Energy Technology Data Exchange (ETDEWEB)

Ravash, Roghaiyeh; Blaesing, Juergen; Hempel, Thomas; Noltemeyer, Martin; Dadgar, Armin; Christen, Juergen; Krost, Alois [Otto-von-Guericke-University Magdeburg, FNW/IEP/AHE, Postfach 4120, 39016 Magdeburg (Germany)

2011-03-15

We present metal organic vapor phase epitaxy growth of semi-polar GaN structures on high index silicon surfaces. The crystallographic structure of GaN grown on Si(112), (115), and (117) substrates is investigated by X-ray analysis and scanning electron microscopy. X-ray diffraction was performed in Bragg Brentano geometry as well as pole figure measurements. The results demonstrate that the orientation of GaN crystallites on Si is significantly dependent on thickness of the AlN seeding layer and TMAl-flow rate. We observe that the crystallographic structures of GaN by applying thin AlN seeding layers grown with high TMAl-flow rate depend on Si surface direction while they are independent for thicker layers. By applying such seeding layer we obtain single crystalline semi-polar GaN on Si(112), while GaN structures grown with the same growth parameters on Si(117) show four components of GaN(0002). (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Epitaxial condition and polarity in GaN grown on a HfN-buffered Si(111) wafer

Science.gov (United States)

Xu, X.; Armitage, R.; Shinkai, Satoko; Sasaki, Katsutaka; Kisielowski, C.; Weber, E. R.

2005-05-01

Single-crystal GaN thin films have been deposited epitaxially on a HfN-buffered Si(111) substrates by molecular-beam epitaxy. The microstructural and compositional characteristics of the films were studied in detail by transmission electron microscopy (TEMs). Cross-sectional TEM investigations have revealed the crystallographic orientation relationship in different GaN /HfN/Si layers. GaN film polarity is studied by conventional TEM and convergent beam electron diffraction simulations, and the results show that the GaN film has a Ga polarity with relatively high density of inversion domains. Based on our observations, growth mechanisms related to the structural properties are discussed.

Polarization Measurements in High-Energy Deuteron Photodisintegration

International Nuclear Information System (INIS)

Adam Sarty; Andrei Afanasev; Arunava Saha; Bogdan Wojtsekhowski; Brendan Fox; Chang, C.; Cathleen Jones; Charles Glashausser; Charles Perdrisat; Cornelis De Jager; Cornelis De Jager; Cornelis de Jager; Crovelli, D.; Daniel Simon; David Meekins; Demetrius Margaziotis; Dipangkar Dutta; Edgar Kooijman; Edward Brash; Edward Kinney; Elaine Schulte; Eugene Chudakov; Feng Xiong; Franco Garibaldi; Garth Huber; Gerfried Kumbartzki; Guido Urciuoli; Haiyan Gao; James Kelly; Javier Gomez; Jens-Ole Hansen; Jian-Ping Chen; John Calarco; John LeRose; Jordan Hovdebo; Joseph Mitchell; Juncai Gao; Kamal Benslama; Kathy McCormick; Kevin Fissum; Konrad Aniol; Krishni Wijesooriya; Louis Bimbot; Ludyvine Morand; Luminita Todor; Marat Rvachev; Mark Jones; Martin Epstein; Meihua Liang; Michael Kuss; Moskov Amarian; Nilanga Liyanage; Oleksandr Glamazdin; Olivier Gayou; Paul Ulmer; Pete Markowitz; Peter Bosted; Holt, R.; Riad Suleiman; Richard Lindgren; Rikki Roche; Robert Michaels; Roman Pomatsalyuk; Ronald Gilman; Ronald Ransome; Salvatore Frullani; Scott Dumalski; Seonho Choi; Sergey Malov; Sonja Dieterich; Steffen Strauch; Stephen Becher; Steve Churchwell; Ting Chang; Viktor Gorbenko; Vina Punjabi; Xiaodong Jiang; Zein-Eddine Meziani; Zhengwei Chai; Wang Xu

2001-01-01

We present measurements of the recoil proton polarization for the d(polarized y, polarized p)n reaction at thetac.m. = 90 degrees for photon energies up to 2.4 GeV. These are the first data in this reaction for polarization transfer with circularly polarized photons. The induced polarization py vanishes above 1 GeV, contrary to meson-baryon model expectations, in which resonances lead to large polarizations. However, the polarization transfer Cx does not vanish above 1 GeV, inconsistent with hadron helicity conservation. Thus, we show that the scaling behavior observed in the d(y,p)n cross sections is not a result of perturbative QCD. These data should provide important tests of new nonperturbative calculations in the intermediate energy regime

Polarity Control of Heteroepitaxial GaN Nanowires on Diamond.

Science.gov (United States)

Hetzl, Martin; Kraut, Max; Hoffmann, Theresa; Stutzmann, Martin

2017-06-14

Group III-nitride materials such as GaN nanowires are characterized by a spontaneous polarization within the crystal. The sign of the resulting sheet charge at the top and bottom facet of a GaN nanowire is determined by the orientation of the wurtzite bilayer of the different atomic species, called N and Ga polarity. We investigate the polarity distribution of heteroepitaxial GaN nanowires on different substrates and demonstrate polarity control of GaN nanowires on diamond. Kelvin Probe Force Microscopy is used to determine the polarity of individual selective area-grown and self-assembled nanowires over a large scale. At standard growth conditions, mixed polarity occurs for selective GaN nanowires on various substrates, namely on silicon, on sapphire and on diamond. To obtain control over the growth orientation on diamond, the substrate surface is modified by nitrogen and oxygen plasma exposure prior to growth, and the growth parameters are adjusted simultaneously. We find that the surface chemistry and the substrate temperature are the decisive factors for obtaining control of up to 93% for both polarity types, whereas the growth mode, namely selective area or self-assembled growth, does not influence the polarity distribution significantly. The experimental results are discussed by a model based on the interfacial bonds between the GaN nanowires, the termination layer, and the substrate.

Ab initio-based bulk and surface thermodynamics of InGaN alloys. Investigating the effects of strain and surface polarity

Energy Technology Data Exchange (ETDEWEB)

Duff, Andrew I.; Lymperakis, Liverios; Neugebauer, Joerg [Max-Planck-Institut fuer Eisenforschung, Duesseldorf (Germany)

2015-05-15

The growth of high In content InGaN with sufficiently high crystal quality is challenging due to the differences in the GaN and InN thermodynamics. The surprisingly different thermodynamics is due to a complex competition between strain and chemistry and mediated by the different indium and gallium atomic radii as well as their different bonding enthalpies with nitrogen. In the present work, we investigate bulk and surface thermodynamics of molecular beam epitaxial (MBE) growth of In{sub x}Ga{sub 1-x}N for the technologically relevant (0001) and (000 anti 1) growth planes by means of density functional theory calculations. Our calculations confirm that coherent growth fully suppresses phase separation through spinodal decomposition. However, the biaxial strain is found to have a marginal effect on the critical temperatures for In{sub x}Ga{sub 1-x}N decomposition. Furthermore, the thermal stability of excess indium is found to be remarkably higher on N-polar surfaces than on the Ga-polar surfaces. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

KAUST Repository

Pourhashemi, A.

2016-10-11

Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

KAUST Repository

Pourhashemi, A.; Farrell, R.M.; Cohen, D.A.; Becerra, D.L.; DenBaars, S.P.; Nakamura, S.

2016-01-01

Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

Polarity control and growth mode of InN on yttria-stabilized zirconia (111) surfaces

International Nuclear Information System (INIS)

Kobayashi, Atsushi; Okubo, Kana; Ohta, Jitsuo; Oshima, Masaharu; Fujioka, Hiroshi

2012-01-01

We have found that polarity of epitaxial InN layers has been controlled by choice of a capping material during high-temperature annealing of yttria-stabilized zirconia (YSZ) (111) substrates in air. Angle-resolved X-ray photoelectron spectroscopy has revealed that the amount of segregation of Y atoms to the YSZ surface depended on the capping material of the substrates. In-polar and N-polar InN have been reproducibly grown on Y-segregated and Y-segregation-free YSZ surfaces, respectively. We have also found that the growth of the first monolayer (ML) of N-polar InN proceeds in a step-flow mode which then switches to layer-by-layer mode after the coverage by 1-ML-thick InN. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Relativistic polarized neutrons at the Laboratory of High Energy Physics, JINR

International Nuclear Information System (INIS)

Kirillov, A.; Komolov, L.; Kovalenko, A.; Matyushevskij, E.; Nomofilov, A.; Rukoyatkin, P.; Sharov, V.; Starikov, A.; Strunov, L.; Svetov, A.

1996-01-01

Using slowly extracted polarized deuterons, available at the accelerator facility of the Laboratory of High Energy Physics, JINR, polarized quasi-monochromatic neutrons with momenta from 1.1 to 4.5 GeV/c have been generated. Depending on momentum, from 10 4 to 10 6 polarized neutrons per accelerator cycle were produced. At present, the polarized neutrons are mainly intended for measuring the (n vec, p vec) total cross section differences. 6 refs., 2 figs

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

Energy Technology Data Exchange (ETDEWEB)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Xing, Huili; Jena, Debdeep, E-mail: djena@cornell.edu [Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 (United States); Departments of ECE and MSE, Cornell University, Ithaca, New York 14853 (United States)

2015-10-19

By the insertion of thin In{sub x}Ga{sub 1−x}N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors.

Polarization-induced Zener tunnel diodes in GaN/InGaN/GaN heterojunctions

International Nuclear Information System (INIS)

Yan, Xiaodong; Li, Wenjun; Islam, S. M.; Pourang, Kasra; Fay, Patrick; Xing, Huili; Jena, Debdeep

2015-01-01

By the insertion of thin In x Ga 1−x N layers into Nitrogen-polar GaN p-n junctions, polarization-induced Zener tunnel junctions are studied. The reverse-bias interband Zener tunneling current is found to be weakly temperature dependent, as opposed to the strongly temperature-dependent forward bias current. This indicates tunneling as the primary reverse-bias current transport mechanism. The Indium composition in the InGaN layer is systematically varied to demonstrate the increase in the interband tunneling current. Comparing the experimentally measured tunneling currents to a model helps identify the specific challenges in potentially taking such junctions towards nitride-based polarization-induced tunneling field-effect transistors

Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

Energy Technology Data Exchange (ETDEWEB)

Hardy, Matthew T., E-mail: matthew.hardy.ctr@nrl.navy.mil; Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J. [Electronics Science and Technology Division, Naval Research Laboratory, 4555 Overlook Avenue SW, Washington DC 20375 (United States); McConkie, Thomas O.; Smith, David J. [Department of Physics, Arizona State University, Tempe, Arizona 85287-1504 (United States); Nepal, Neeraj [Sotera Defense Solutions, 2200 Defense Hwy Suite 405, Crofton, Maryland 21114 (United States)

2016-03-15

The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investigated. Lateral compositional inhomogeneity is present in N-rich InAlN films grown at low temperature, and phase segregation is exacerbated with increasing InN fraction. A smooth, step-flow surface morphology and elimination of compositional inhomogeneity can be achieved at a growth temperature 50 °C above the onset of In evaporation (650 °C). A GaN/AlN/GaN/200-nm InAlN heterostructure had a sheet charge density of 1.7 × 10{sup 13 }cm{sup −2} and no degradation in mobility (1760 cm{sup 2}/V s) relative to 15-nm-thick InAlN layers. Demonstration of thick-barrier high-electron-mobility transistors with good direct-current characteristics shows that device quality, thick InAlN layers can be successfully grown by PAMBE.

Morphological and microstructural stability of N-polar InAlN thin films grown on free-standing GaN substrates by molecular beam epitaxy

International Nuclear Information System (INIS)

Hardy, Matthew T.; Storm, David F.; Downey, Brian P.; Katzer, D. Scott; Meyer, David J.; McConkie, Thomas O.; Smith, David J.; Nepal, Neeraj

2016-01-01

The sensitivity of the surface morphology and microstructure of N-polar-oriented InAlN to variations in composition, temperature, and layer thickness for thin films grown by plasma-assisted molecular beam epitaxy (PAMBE) has been investigated. Lateral compositional inhomogeneity is present in N-rich InAlN films grown at low temperature, and phase segregation is exacerbated with increasing InN fraction. A smooth, step-flow surface morphology and elimination of compositional inhomogeneity can be achieved at a growth temperature 50 °C above the onset of In evaporation (650 °C). A GaN/AlN/GaN/200-nm InAlN heterostructure had a sheet charge density of 1.7 × 10 13  cm −2 and no degradation in mobility (1760 cm 2 /V s) relative to 15-nm-thick InAlN layers. Demonstration of thick-barrier high-electron-mobility transistors with good direct-current characteristics shows that device quality, thick InAlN layers can be successfully grown by PAMBE

Optimization of polarization compensating interlayers for InGaN/GaN MQW solar cells

Science.gov (United States)

Saini, Basant; Sharma, Sugandha; Kaur, Ravinder; Pal, Suchandan; Kapoor, Avinashi

2018-05-01

Optimization of polarization compensating interlayer (PCI) is performed numerically to improve the photovoltaic properties of InGaN/GaN multiple quantum well solar cell (MQWSC). Simulations are performed to investigate the effect of change in thickness and composition of PCI on the performance of cell. Short circuit current density is increased as we increase the thickness of the PCI. Changing the constitution of PCI not only mitigates the negative effects of polarization-induced electric fields but also reduces the high potential barrier existing at the QW/p-GaN hetero-interface. This claim is validated by the performance shown by the cell containing optimized PCI, as it shows an improved efficiency of 1.54 % under AM1.5G illumination.

High-power laser diodes with high polarization purity

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Surface chemistry and electronic structure of nonpolar and polar GaN films

Energy Technology Data Exchange (ETDEWEB)

Mishra, Monu; Krishna, T.C. Shibin; Aggarwal, Neha; Gupta, Govind, E-mail: govind@nplindia.org

2015-08-01

Highlights: • Surface chemistry and electronic structure of polar and nonpolar GaN is reported. • Influence of polarization on electron affinity of p & np GaN films is investigated. • Correlation between surface morphology and polarity has been deduced. - Abstract: Photoemission and microscopic analysis of nonpolar (a-GaN/r-Sapphire) and polar (c-GaN/c-Sapphire) epitaxial gallium nitride (GaN) films grown via RF-Molecular Beam Epitaxy is reported. The effect of polarization on surface properties like surface states, electronic structure, chemical bonding and morphology has been investigated and correlated. It was observed that polarization lead to shifts in core level (CL) as well as valence band (VB) spectra. Angle dependent X-ray Photoelectron Spectroscopic analysis revealed higher surface oxide in polar GaN film compared to nonpolar GaN film. On varying the take off angle (TOA) from 0° to 60°, the Ga−O/Ga−N ratio varied from 0.11–0.23 for nonpolar and 0.17–0.36 for polar GaN film. The nonpolar film exhibited N-face polarity while Ga-face polarity was perceived in polar GaN film due to the inherent polarization effect. Polarization charge compensated surface states were observed on the polar GaN film and resulted in downward band bending. Ultraviolet photoelectron spectroscopic measurements revealed electron affinity and ionization energy of 3.4 ± 0.1 eV and 6.8 ± 0.1 eV for nonpolar GaN film and 3.8 ± 0.1 eV and 7.2 ± 0.1 eV for polar GaN film respectively. Field Emission Scanning Electron Microscopy measurements divulged smooth morphology with pits on polar GaN film. The nonpolar film on the other hand showed pyramidal structures having facets all over the surface.

High energy polarized electron beams

International Nuclear Information System (INIS)

Rossmanith, R.

1987-01-01

In nearly all high energy electron storage rings the effect of beam polarization by synchrotron radiation has been measured. The buildup time for polarization in storage rings is of the order of 10 6 to 10 7 revolutions; the spins must remain aligned over this time in order to avoid depolarization. Even extremely small spin deviations per revolution can add up and cause depolarization. The injection and the acceleration of polarized electrons in linacs is much easier. Although some improvements are still necessary, reliable polarized electron sources with sufficiently high intensity and polarization are available. With the linac-type machines SLC at Stanford and CEBAF in Virginia, experiments with polarized electrons will be possible

Phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Alderighi, D.; Vinattieri, A.; Colocci, M. [Ist. Nazionale Fisica della Materia, Firenze (Italy); Dipt. di Fisica and LENS, Firenze (Italy); Bogani, F. [Ist. Nazionale Fisica della Materia, Firenze (Italy); Dipt. di Energetica, Firenze (Italy); Gottardo, S. [Dipt. di Fisica and LENS, Firenze (Italy); Grandjean, N.; Massies, J. [Centre de Recherche sur l' Hetero-Epitaxie et ses Applications, CNRS, Valbonne (France)

2001-01-01

We present an experimental study of the exciton and phonon replica dynamics in high quality GaN epilayers and AlGaN/GaN quantum wells (QW) by means of picosecond time-resolved photoluminescence (PL) measurements. A non-exponential decay is observed both at the zero phonon line (ZPL) and at the n = 1 LO replica. Time-resolved spectra unambiguously assign the replica to the free exciton A recombination. Optical migration effects are detected both in the epilayer and the QWs samples and disappear as the temperature increases up to 60-90 K. Even though the sample quality is comparable to state-of-the-art samples, localization effects dominate the exciton dynamics at low temperature in the studied GaN based structures. (orig.)

Band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterostructures measured by X-ray photoemission spectroscopy.

Science.gov (United States)

Sang, Ling; Zhu, Qin Sheng; Yang, Shao Yan; Liu, Gui Peng; Li, Hui Jie; Wei, Hong Yuan; Jiao, Chun Mei; Liu, Shu Man; Wang, Zhan Guo; Zhou, Xiao Wei; Mao, Wei; Hao, Yue; Shen, Bo

2014-01-01

The band offsets of non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are measured by X-ray photoemission spectroscopy. A large forward-backward asymmetry is observed in the non-polar GaN/AlN and AlN/GaN heterojunctions. The valence-band offsets in the non-polar A-plane GaN/AlN and AlN/GaN heterojunctions are determined to be 1.33 ± 0.16 and 0.73 ± 0.16 eV, respectively. The large valence-band offset difference of 0.6 eV between the non-polar GaN/AlN and AlN/GaN heterojunctions is considered to be due to piezoelectric strain effect in the non-polar heterojunction overlayers.

Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

International Nuclear Information System (INIS)

Agrawal, Manvi; Dharmarasu, Nethaji; Radhakrishnan, K.; Pramana, Stevin Snellius

2015-01-01

Wet chemical etching, reflection high energy electron diffraction, scanning electron microscope and convergent beam electron diffraction have been employed to study the polarities of AlN and the subsequently grown GaN as a function of metal flux in the metal rich growth regime. Both AlN and GaN exhibited metal polarity in the intermediate growth conditions. However, in the droplet growth regime, the polarity of AlN and GaN were N polar and Ga polar, respectively. It was observed that Ga polar GaN could be obtained on both Al and N polar AlN. AlGaN/GaN high electron mobility transistor (HEMT) heterostructure exhibiting hall mobility of 900 cm 2 V -1 s -1 and sheet carrier density of 1.2 × 10 13 cm -2 was demonstrated using N polar AlN which confirmed Ga polarity of GaN. Al metal flux was likely to play an important role in controlling the polarity of AlN and determining the polarity of the subsequent GaN grown on Si(111) by plasma assisted molecular beam epitaxy (PA-MBE). (author)

Digital growth of thick N-polar InGaN films on relaxed InGaN pseudosubstrates

Science.gov (United States)

Lund, Cory; Hestroffer, Karine; Hatui, Nirupam; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2017-11-01

Smooth relaxed N-polar InGaN films were grown by metal-organic CVD (MOCVD) on N-polar InGaN pseudosubstrates (PSs) using a novel digital approach consisting of a constant In precursor flow with the pulsed injection of H2 carrier gas. InGaN layers grown on PSs exhibited an In composition of about 50% higher than those of the layers grown on N-polar GaN templates, assuming the in-plane lattice constant of the relaxed PSs, corresponding to In0.11Ga0.89N. Additionally, the luminescence recorded from InGaN layers grown on PSs at 490 nm was twice as intense as that obtained from the layers deposited on coloaded GaN-on-sapphire templates, which emitted at 430 nm.

(-201) β-Gallium oxide substrate for high quality GaN materials

KAUST Repository

Roqan, Iman S.

2015-03-13

(-201) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. The key advantages of Ga2O3 are its small lattice mismatches (4.7%), appropriate structural, thermal and electrical properties and a competitive price compared to other substrates. Optical characterization show that GaN layers grown on (-201) oriented β-Ga2O3 are dominated by intense bandedge emission with a high luminescence efficiency. Atomic force microscopy studies show a modest threading dislocation density of ~108 cm-2, while complementary Raman spectroscopy indicates that the GaN epilayer is of high quality with slight compressive strain. Room temperature time-findings suggest that the limitation of the photoluminescence lifetime (~500 ps) is due to nonradiative recombination arising from threading dislocation. Therefore, by optimizing the growth conditions, high quality material with significant optical efficiency can be obtained.

Polarization transfer in (d-vector,n-vector) reactions

International Nuclear Information System (INIS)

Walter, R.L.; Tornow, W.

1986-01-01

The status of the measurements and the role of polarization transfer coefficients for (d/sup →/,n/sup →/) reactions is reviewed. Emphasis is given to reactions, involving light-nuclei systems. The importance of (d/sup →/,n/sup →/) reactions as sources of polarized neutrons is pointed out

Facile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters

KAUST Repository

Zhao, Chao; Ng, Tien Khee; Wei, Nini; Prabaswara, Aditya; Alias, Mohd Sharizal; Janjua, Bilal; Shen, Chao; Ooi, Boon S.

2016-01-01

High-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light emitters. We demonstrate here, for the first time, the high-power red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly on metal-substrate. The LEDs exhibited a low turn-on voltage of ~2 V without efficiency droop up to injection current of 500 mA (1.6 kA/cm2) at ~5 V. This is achieved through the direct growth and optimization of high-quality nanowires on titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. We performed extensive studies on the growth mechanisms, obtained high-crystal-quality nanowires, and confirmed the epitaxial relationship between the cubic titanium nitride (TiN) transition layer and the hexagonal nanowires. The growth of nanowires on all-metal stack of TiN/Ti/Mo enables simultaneous implementation of n-metal contact, reflector and heat-sink, which greatly simplifies the fabrication process of high-power light emitters. Our work ushers in a practical platform for high-power nanowires light emitters, providing versatile solutions for multiple cross-disciplinary applications that are greatly enhanced by leveraging on the chemical stability of nitride materials, large specific surface of nanowires, chemical lift-off ready layer structures, and reusable Mo substrates.

Facile Formation of High-quality InGaN/GaN Quantum-disks-in-Nanowires on Bulk-Metal Substrates for High-power Light-emitters

KAUST Repository

Zhao, Chao

2016-01-08

High-quality nitride materials grown on scalable and low-cost metallic substrates are considerably attractive for high-power light emitters. We demonstrate here, for the first time, the high-power red (705 nm) InGaN/GaN quantum-disks (Qdisks)-in-nanowire light-emitting diodes (LEDs) self-assembled directly on metal-substrate. The LEDs exhibited a low turn-on voltage of ~2 V without efficiency droop up to injection current of 500 mA (1.6 kA/cm2) at ~5 V. This is achieved through the direct growth and optimization of high-quality nanowires on titanium (Ti) coated bulk polycrystalline-molybdenum (Mo) substrates. We performed extensive studies on the growth mechanisms, obtained high-crystal-quality nanowires, and confirmed the epitaxial relationship between the cubic titanium nitride (TiN) transition layer and the hexagonal nanowires. The growth of nanowires on all-metal stack of TiN/Ti/Mo enables simultaneous implementation of n-metal contact, reflector and heat-sink, which greatly simplifies the fabrication process of high-power light emitters. Our work ushers in a practical platform for high-power nanowires light emitters, providing versatile solutions for multiple cross-disciplinary applications that are greatly enhanced by leveraging on the chemical stability of nitride materials, large specific surface of nanowires, chemical lift-off ready layer structures, and reusable Mo substrates.

Theoretical investigation into negative differential resistance characteristics of resonant tunneling diodes based on lattice-matched and polarization-matched AlInN/GaN heterostructures

Science.gov (United States)

Rong, Taotao; Yang, Lin-An; Yang, Lin; Hao, Yue

2018-01-01

In this work, we report an investigation of resonant tunneling diodes (RTDs) with lattice-matched and polarization-matched AlInN/GaN heterostructures using the numerical simulation. Compared with the lattice-matched AlInN/GaN RTDs, the RTDs based on polarization-matched AlInN/GaN hetero-structures exhibit symmetrical conduction band profiles due to eliminating the polarization charge discontinuity, which achieve the equivalence of double barrier transmission coefficients, thereby the relatively high driving current, the high symmetry of current density, and the high peak-to-valley current ratio (PVCR) under the condition of the positive and the negative sweeping voltages. Simulations show that the peak current density approaches 1.2 × 107 A/cm2 at the bias voltage of 0.72 V and the PVCR approaches 1.37 at both sweeping voltages. It also shows that under the condition of the same shallow energy level, when the trap density reaches 1 × 1019 cm-3, the polarization-matched RTDs still have acceptable negative differential resistance (NDR) characteristics, while the NDR characteristics of lattice-matched RTDs become irregular. After introducing the deeper energy level of 1 eV into the polarization-matched and lattice-matched RTDs, 60 scans are performed under the same trap density. Simulation results show that the degradation of the polarization-matched RTDs is 22%, while lattice-matched RTDs have a degradation of 55%. It can be found that the polarization-matched RTDs have a greater defect tolerance than the lattice-matched RTDs, which is beneficial to the available manufacture of actual terahertz RTD devices.

High current polarized electron source

Science.gov (United States)

Suleiman, R.; Adderley, P.; Grames, J.; Hansknecht, J.; Poelker, M.; Stutzman, M.

2018-05-01

Jefferson Lab operates two DC high voltage GaAs photoguns with compact inverted insulators. One photogun provides the polarized electron beam at the Continuous Electron Beam Accelerator Facility (CEBAF) up to 200 µA. The other gun is used for high average current photocathode lifetime studies at a dedicated test facility up to 4 mA of polarized beam and 10 mA of un-polarized beam. GaAs-based photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed facilities that must operate in excess of tens of mA of polarized average current. This contribution describes techniques to maintain good vacuum while delivering high beam currents, and techniques that minimize damage due to ion bombardment, the dominant mechanism that reduces photocathode yield. Advantages of higher DC voltage include reduced space-charge emittance growth and the potential for better photocathode lifetime. Highlights of R&D to improve the performance of polarized electron sources and prolong the lifetime of strained-superlattice GaAs are presented.

Anisotropically biaxial strain in non-polar (112-0) plane In x Ga1-x N/GaN layers investigated by X-ray reciprocal space mapping.

Science.gov (United States)

Zhao, Guijuan; Li, Huijie; Wang, Lianshan; Meng, Yulin; Ji, Zesheng; Li, Fangzheng; Wei, Hongyuan; Yang, Shaoyan; Wang, Zhanguo

2017-07-03

In this study, the indium composition x as well as the anisotropically biaxial strain in non-polar a-plane In x Ga 1-x N on GaN is studied by X-ray diffraction (XRD) analysis. In accordance with XRD reciprocal lattice space mapping, with increasing indium composition, the maximum of the In x Ga 1-x N reciprocal lattice points progressively shifts from a fully compressive strained to a fully relaxed position, then to reversed tensile strained. To fully understand the strain in the ternary alloy layers, it is helpful to grow high-quality device structures using a-plane nitrides. As the layer thickness increases, the strain of In x Ga 1-x N layer releases through surface roughening and the 3D growth-mode.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

International Nuclear Information System (INIS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10"1"7 cm"−"3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Energy Technology Data Exchange (ETDEWEB)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China); Zhao, Degang [State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083 (China); Zhang, Baolin; Du, Guotong [State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012 (China)

2016-01-01

Graphical abstract: - Highlights: • Effects of Mg doping on wet etching of N-polar GaN are illustrated and analysed. • Etching process model of Mg-doped N-polar GaN in KOH solution is purposed. • It is found that Mg doping can induce tensile strain in N-polar GaN film. • N-polar p-GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} is obtained. - Abstract: KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 × 10{sup 17} cm{sup −3} was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Lambda polarization feasibility study at BM@N

Directory of Open Access Journals (Sweden)

Suvarieva Dilyna

2017-01-01

In this analysis, the possibility to measure at BM@N the polarization of the lightest strange hyperon Λ is studied in Monte Carlo event samples produced with the DCM-QGSM generator. It is shown that the detector will allow to measure Λ polarization with a precision required to check the model predictions.

MBE-growth, characterization and properties of InN and InGaN

International Nuclear Information System (INIS)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T.; Suzuki, A.; Miyajima, T.

2003-01-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

MBE-growth, characterization and properties of InN and InGaN

Energy Technology Data Exchange (ETDEWEB)

Nanishi, Y.; Saito, Y.; Yamaguchi, T.; Hori, M.; Matsuda, F.; Araki, T. [Dept. of Photonics, Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Suzuki, A. [Res. Org. of Sci. and Eng., Ritsumeikan Univ., 1-1-1 Noji-higashi, Kusatsu (Japan); Miyajima, T. [Sony Corp. Core Technology and Network Company, 4-14-1 Asahi, Atsugi, Kanagawa 243-0014 (Japan)

2003-11-01

Recent developments on RF-MBE growth of InN and InGaN and their structural and property characterizations are reviewed. For successful growth of high quality InN, (1) nitridation of the sapphire substrates, (2) two-step growth, (3) precise control of V/III ratio and (4) selection of optimum growth temperature are found to be essential. Characterization using XRD, TEM, EXAFS and Raman scattering have clearly demonstrated that InN films have ideal hexagonal wurtzite structure. It is also found that the film has N-polarity. Studies on optimum growth condition dependence on substrate polarity using C and Si face SiC substrates and Ga and N face free-standing GaN substrates are also demonstrated. The result explains why high-quality InN grown by RF-MBE has N-polarity. PL and CL studies on these well-characterized high-quality InN have shown luminescence peaks at approximately 0.75 eV at 77 K. These values, however, change slightly depending on measurement temperatures and probably on the residual carrier concentrations. InGaN with full compositional range are also successfully grown on sapphire substrates and band gap energies of these alloys are also studied using PL and CL. Based on these results, true band gap energies of InN are discussed. This paper also includes latest study on single crystalline InN growth on Si (111) substrates. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Linearly polarized photoluminescence of InGaN quantum disks embedded in GaN nanorods.

Science.gov (United States)

Park, Youngsin; Chan, Christopher C S; Nuttall, Luke; Puchtler, Tim J; Taylor, Robert A; Kim, Nammee; Jo, Yongcheol; Im, Hyunsik

2018-05-25

We have investigated the emission from InGaN/GaN quantum disks grown on the tip of GaN nanorods. The emission at 3.21 eV from the InGaN quantum disk doesn't show a Stark shift, and it is linearly polarized when excited perpendicular to the growth direction. The degree of linear polarization is about 39.3% due to the anisotropy of the nanostructures. In order to characterize a single nanostructure, the quantum disks were dispersed on a SiO 2 substrate patterned with a metal reference grid. By rotating the excitation polarization angle from parallel to perpendicular relative to the nanorods, the variation of overall PL for the 3.21 eV peak was recorded and it clearly showed the degree of linear polarization (DLP) of 51.5%.

Generating highly polarized nuclear spins in solution using dynamic nuclear polarization

DEFF Research Database (Denmark)

Wolber, J.; Ellner, F.; Fridlund, B.

2004-01-01

A method to generate strongly polarized nuclear spins in solution has been developed, using Dynamic Nuclear Polarization (DNP) at a temperature of 1.2K, and at a field of 3.354T, corresponding to an electron spin resonance frequency of 94GHz. Trityl radicals are used to directly polarize 13C...... and other low-γ nuclei. Subsequent to the DNP process, the solid sample is dissolved rapidly with a warm solvent to create a solution of molecules with highly polarized nuclear spins. Two main applications are proposed: high-resolution liquid state NMR with enhanced sensitivity, and the use...

High-quality AlN films grown on chemical vapor-deposited graphene films

Directory of Open Access Journals (Sweden)

Chen Bin-Hao

2016-01-01

Full Text Available We report the growth of high-quality AlN films on graphene. The graphene films were synthesized by CVD and then transferred onto silicon substrates. Epitaxial aluminum nitride films were deposited by DC magnetron sputtering on both graphene as an intermediate layer and silicon as a substrate. The structural characteristics of the AlN films and graphene were investigated. Highly c-axis-oriented AlN crystal structures are investigated based on the XRDpatterns observations.

Suppression of metastable-phase inclusion in N-polar (0001¯) InGaN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy

International Nuclear Information System (INIS)

Shojiki, Kanako; Iwabuchi, Takuya; Kuboya, Shigeyuki; Choi, Jung-Hun; Tanikawa, Tomoyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi; Usami, Noritaka

2015-01-01

The metastable zincblende (ZB) phase in N-polar (0001 ¯ ) (−c-plane) InGaN/GaN multiple quantum wells (MQWs) grown by metalorganic vapor phase epitaxy is elucidated by the electron backscatter diffraction measurements. From the comparison between the −c-plane and Ga-polar (0001) (+c-plane), the −c-plane MQWs were found to be suffered from the severe ZB-phase inclusion, while ZB-inclusion is negligible in the +c-plane MQWs grown under the same growth conditions. The ZB-phase inclusion is a hurdle for fabricating the −c-plane light-emitting diodes because the islands with a triangular shape appeared on a surface in the ZB-phase domains. To improve the purity of stable wurtzite (WZ)-phase, the optimum conditions were investigated. The ZB-phase is dramatically eliminated with decreasing the V/III ratio and increasing the growth temperature. To obtain much-higher-quality MQWs, the thinner InGaN wells and the hydrogen introduction during GaN barriers growth were tried. Consequently, MQWs with almost pure WZ phase and with atomically smooth surface have been demonstrated

Growth and characterization of semi-polar (11-22) GaN on patterned (113) Si substrates

International Nuclear Information System (INIS)

Bai, J; Yu, X; Gong, Y; Hou, Y N; Zhang, Y; Wang, T

2015-01-01

Patterned (113) Si substrates have been fabricated for the growth of (11-22) semi-polar GaN, which completely eliminates one of the great issues in the growth of semi-polar GaN on silicon substrates, ‘Ga melting-back’. Furthermore, unlike any other mask patterning approaches which normally lead to parallel grooves along a particular orientation, our approach is to form periodic square window patterns. As a result, crack-free semi-polar (11-22) GaN with a significant improvement in crystal quality has been achieved, in particular, basal stacking faults (BSFs) have been significantly reduced. The mechanism for the defect suppression has been investigated based on detailed transmission electron microscopy measurements. It has been found that the BSFs can be impeded effectively at an early growth stage due to the priority growth along the 〈0001〉 direction. The additional 〈1-100〉 lateral growth above the masks results in a further reduction in dislocation density. The significant reduction in BSFs has been confirmed by low temperature photoluminescence measurements. (paper)

Groove-type channel enhancement-mode AlGaN/GaN MIS HEMT with combined polar and nonpolar AlGaN/GaN heterostructures

International Nuclear Information System (INIS)

Duan Xiao-Ling; Zhang Jin-Cheng; Xiao Ming; Zhao Yi; Ning Jing; Hao Yue

2016-01-01

A novel groove-type channel enhancement-mode AlGaN/GaN MIS high electron mobility transistor (GTCE-HEMT) with a combined polar and nonpolar AlGaN/GaN heterostucture is presented. The device simulation shows a threshold voltage of 1.24 V, peak transconductance of 182 mS/mm, and subthreshold slope of 85 mV/dec, which are obtained by adjusting the device parameters. Interestingly, it is possible to control the threshold voltage accurately without precisely controlling the etching depth in fabrication by adopting this structure. Besides, the breakdown voltage ( V B ) is significantly increased by 78% in comparison with the value of the conventional MIS-HEMT. Moreover, the fabrication process of the novel device is entirely compatible with that of the conventional depletion-mode (D-mode) polar AlGaN/GaN HEMT. It presents a promising way to realize the switch application and the E/D-mode logic circuits. (paper)

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

International Nuclear Information System (INIS)

Davies, M. J.; Dawson, P.; Hammersley, S.; Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A.

2016-01-01

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10 11  cm −2  pulse −1 per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

Polarization of protons produced in diffractive disintegration of deuterons by high-energy pions

International Nuclear Information System (INIS)

Gakh, G.Yi.; Rekalo, M.P.

1996-01-01

For the process of diffractive disintegration of unpolarized deuterons by the high-energy pions, π + d → π + p + n, the polarization characteristics of produced protons are calculated. Using the vector nature of the Pomeron exchange, the general structure of all components of proton polarization vector is found for d (π, π p) n. By the Pomeron-photon analogy, the amplitude of the process P + d → n + p is approximated by the isoscalar contribution of four Born diagrams similar to the case of deuteron electrodisintegration. Unitarization of the amplitude is achieved by introducing in multipole amplitudes the corresponding phases of np-scattering. The numerical calculation of all components of the polarization vector of protons, produced in the case of noncomplanar kinematics of the reaction π + d → π + p + n, is realized

Kinetic-limited etching of magnesium doping nitrogen polar GaN in potassium hydroxide solution

Science.gov (United States)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Yang, Fan; Li, Pengchong; Zhao, Degang; Zhang, Baolin; Du, Guotong

2016-01-01

KOH based wet etchings were performed on both undoped and Mg-doped N-polar GaN films grown by metal-organic chemical vapor deposition. It is found that the etching rate for Mg-doped N-polar GaN gets slow obviously compared with undoped N-polar GaN. X-ray photoelectron spectroscopy analysis proved that Mg oxide formed on N-polar GaN surface is insoluble in KOH solution so that kinetic-limited etching occurs as the etching process goes on. The etching process model of Mg-doped N-polar GaN in KOH solution is tentatively purposed using a simplified ideal atomic configuration. Raman spectroscopy analysis reveals that Mg doping can induce tensile strain in N-polar GaN films. Meanwhile, p-type N-polar GaN film with a hole concentration of 2.4 ÿ 1017 cm⿿3 was obtained by optimizing bis-cyclopentadienyl magnesium flow rates.

Complementary analyses on the local polarity in lateral polarity-inverted GaN heterostructure on sapphire (0001) substrate

International Nuclear Information System (INIS)

Katayama, Ryuji; Kuge, Yoshihiro; Onabe, Kentaro; Matsushita, Tomonori; Kondo, Takashi

2006-01-01

The fabrication of the lateral polarity-inverted GaN heterostructure on sapphire (0001) using a radio-frequency-plasma-enhanced molecular beam epitaxy is demonstrated. Its microscopic properties such as surface potentials, piezoelectric polarizations, and residual carrier densities were investigated by Kelvin force microscopy and micro-Raman scattering. The inversion from Ga polarity to N polarity in a specific domain and its higher crystal perfection had been unambiguously confirmed by these complementary analyses. The results were also fairly consistent with that of KOH etching, which suggests the applicability of these processes to the fabrication of photonic nanostructures

Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface

KAUST Repository

Zhang, Qian; Mi, Wenbo; Wang, Xiaocha; Wang, Xuhui

2015-01-01

We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.

Spin Polarization Inversion at Benzene-Absorbed Fe4N Surface

KAUST Repository

Zhang, Qian

2015-05-27

We report a first-principle study on electronic structure and simulation of the spin-polarized scanning tunneling microscopy graphic of a benzene/Fe4N interface. Fe4N is a compound ferromagnet suitable for many spintronic applications. We found that, depending on the particular termination schemes and interface configurations, the spin polarization on the benzene surface shows a rich variety of properties ranging from cosine-type oscillation to polarization inversion. Spin-polarization inversion above benzene is resulting from the hybridizations between C pz and the out-of-plane d orbitals of Fe atom.

Atomic structure of defects in GaN:Mg grown with Ga polarity

International Nuclear Information System (INIS)

Liliental-Weber, Z.; Tomaszewicz, T.; Zakharov, D.; Jasinski, J.; O'Keefe, M.A.; Hautakangas, S.; Laakso, A.; Saarinen, K.

2003-01-01

Electron microscope phase images, produced by direct reconstruction of the scattered electron wave from a focal series of high-resolution images, were used to determine the nature of defects formed in GaN:Mg crystals. We studied bulk crystals grown from dilute solutions of atomic nitrogen in liquid gallium at high pressure and thin films grown by the MOCVD method. All the crystals were grown with Ga-polarity. In both types of samples the majority of defects were three dimensional Mg-rich hexagonal pyramids with bases on the (0001) plane and six walls on {11(und 2)3} planes seen in cross-section as triangulars. Some other defects appear in cross-section as trapezoidal (rectangular) defects as a result of presence of truncated pyramids. Both type of defects have hollow centers. They are decorated by Mg on all six side walls and a base. The GaN which grows inside on the defect walls shows polarity inversion. It is shown that change of polarity starts from the defect tip and propagates to the base, and that the stacking sequence changes from ab in the matrix to bc inside the defect. Exchange of the Ga sublattice with the N sublattice within the defect leads to 0.6 ± 0.2(angstrom) displacement between Ga sublattices outside and inside the defects. It is proposed that lateral overgrowth of the cavities formed within the defect takes place to restore matrix polarity on the defect base

Comparative studies of efficiency droop in polar and non-polar InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Davies, M. J.; Dawson, P.; Hammersley, S. [School of Physics and Astronomy, Photon Science Institute, University of Manchester, M13 9PL Manchester (United Kingdom); Zhu, T.; Kappers, M. J.; Humphreys, C. J.; Oliver, R. A. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2016-06-20

We report on a comparative study of efficiency droop in polar and non-polar InGaN quantum well structures at T = 10 K. To ensure that the experiments were carried out with identical carrier densities for any particular excitation power density, we used laser pulses of duration ∼100 fs at a repetition rate of 400 kHz. For both types of structures, efficiency droop was observed to occur for carrier densities of above 7 × 10{sup 11 }cm{sup −2 }pulse{sup −1} per quantum well; also both structures exhibited similar spectral broadening in the droop regime. These results show that efficiency droop is intrinsic in InGaN quantum wells, whether polar or non-polar, and is a function, specifically, of carrier density.

Quad-Polarization Transmission for High-Capacity IM/DD Links

DEFF Research Database (Denmark)

Estaran Tolosa, Jose Manuel; Castaneda, Mario A. Usuga; Porto da Silva, Edson

2014-01-01

We report the first experimental demonstration of IM/DD links usi ng four states of polarization. Fiber - Induced polarization rotation is compensated with a simple tracking algorithm operating on the Stokes space. The principle is prove n at 128 Gb/s over 2 - km SSMF......We report the first experimental demonstration of IM/DD links usi ng four states of polarization. Fiber - Induced polarization rotation is compensated with a simple tracking algorithm operating on the Stokes space. The principle is prove n at 128 Gb/s over 2 - km SSMF...

High-Frequency Dynamic Nuclear Polarization in the Nuclear Rotating Frame

DEFF Research Database (Denmark)

Farrar, C. T.; Hall, D. A.; Gerfen, G. J.

2000-01-01

A proton dynamic nuclear polarization (DNP) NMR signal enhancement (ϵ) close to thermal equilibrium, ϵ = 0.89, has been obtained at high field (B0 = 5 T, νepr = 139.5 GHz) using 15 mM trityl radical in a 40:60 water/glycerol frozen solution at 11 K. The electron-nuclear polarization transfer...... is performed in the nuclear rotating frame with microwave irradiation during a nuclear spin-lock pulse. The growth of the signal enhancement is governed by the rotating frame nuclear spin–lattice relaxation time (T1ρ), which is four orders of magnitude shorter than the nuclear spin–lattice relaxation time (T1n......). Due to the rapid polarization transfer in the nuclear rotating frame the experiment can be recycled at a rate of 1/T1ρ and is not limited by the much slower lab frame nuclear spin–lattice relaxation rate (1/T1n). The increased repetition rate allowed in the nuclear rotating frame provides an effective...

High polarization photocathode R ampersand D at SLAC

International Nuclear Information System (INIS)

Maruyama, Takashi; Garwin, E.L.; Prepost, R.; Zaplac, G.H.

1993-01-01

This paper describes recent progress on the development of high polarization photocathodes for polarized electron sources. A strained InGaAs cathode has achieved a maximum electron-spin polarization of 71% and has demonstrated the strain enhancement of polarization for the first time. Strained GaAs cathodes have yielded polarizations as high as 90% with much higher quantum efficiency

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

Science.gov (United States)

He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

2017-12-13

It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

Enhancement of TE polarized light extraction efficiency in nanoscale (AlN)m /(GaN)n (m>n) superlattice substitution for Al-rich AlGaN disorder alloy: ultra-thin GaN layer modulation

International Nuclear Information System (INIS)

Jiang, Xin-he; Shi, Jun-jie; Zhong, Hong-xia; Huang, Pu; Ding, Yi-min; Yu, Tong-jun; Shen, Bo; Lu, Jing; Zhang, Min; Wang, Xihua

2014-01-01

The problem of achieving high light extraction efficiency in Al-rich Al x Ga 1−x N is of paramount importance for the realization of AlGaN-based deep ultraviolet (DUV) optoelectronic devices. To solve this problem, we investigate the microscopic mechanism of valence band inversion and light polarization, a crucial factor for enhancing light extraction efficiency, in Al-rich Al x Ga 1−x N alloy using the Heyd–Scuseria–Ernzerhof hybrid functional, local-density approximation with 1/2 occupation, and the Perdew–Burke–Ernzerhof functional, in which the spin–orbit coupling effect is included. We find that the microscopic Ga-atom distribution can effectively modulate the valence band structure of Al-rich Al x Ga 1−x N. Moreover, we prove that the valence band arrangement in the decreasing order of heavy hole, light hole, and crystal-field split-off hole can be realized by using nanoscale (AlN) m /(GaN) n (m>n) superlattice (SL) substituting for Al-rich Al x Ga 1−x N disorder alloy as the active layer of optoelectronic devices due to the ultra-thin GaN layer modulation. The valence band maximum, i.e., the heavy hole band, has p x - and p y -like characteristics and is highly localized in the SL structure, which leads to the desired transverse electric (TE) polarized (E⊥c) light emission with improved light extraction efficiency in the DUV spectral region. Some important band-structure parameters and electron/hole effective masses are also given. The physical origin for the valence band inversion and TE polarization in (AlN) m /(GaN) n SL is analyzed in depth. (paper)

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p-n diodes and InGaN LEDs

Science.gov (United States)

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-12-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal-organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p-n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm-3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10-3-3.4 × 10-3 Ω·cm2, and the turn-on voltages of the diodes.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.

2017-11-27

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs

KAUST Repository

Mughal, Asad J.; Young, Erin C.; Alhassan, Abdullah I.; Back, Joonho; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.

2017-01-01

Improved turn-on voltages and reduced series resistances were realized by depositing highly Si-doped n-type GaN using molecular beam epitaxy on polarization-enhanced p-type InGaN contact layers grown using metal–organic chemical vapor deposition. We compared the effects of different Si doping concentrations and the addition of p-type InGaN on the forward voltages of p–n diodes and light-emitting diodes, and found that increasing the Si concentrations from 1.9 × 1020 to 4.6 × 1020 cm−3 and including a highly doped p-type InGaN at the junction both contributed to reductions in the depletion width, the series resistance of 4.2 × 10−3–3.4 × 10−3 Ωcenterdotcm2, and the turn-on voltages of the diodes.

Strongly transverse-electric-polarized emission from deep ultraviolet AlGaN quantum well light emitting diodes

Energy Technology Data Exchange (ETDEWEB)

Reich, Christoph, E-mail: Christoph.Reich@tu-berlin.de; Guttmann, Martin; Wernicke, Tim; Mehnke, Frank; Kuhn, Christian [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, Berlin 10623 (Germany); Feneberg, Martin; Goldhahn, Rüdiger [Institut für Experimentelle Physik, Otto-von-Guericke-Universität, Universitätsplatz 2, Magdeburg 39106 (Germany); Rass, Jens; Kneissl, Michael [Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, Berlin 10623 (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany); Lapeyrade, Mickael; Einfeldt, Sven; Knauer, Arne; Kueller, Viola; Weyers, Markus [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, Berlin 12489 (Germany)

2015-10-05

The optical polarization of emission from ultraviolet (UV) light emitting diodes (LEDs) based on (0001)-oriented Al{sub x}Ga{sub 1−x}N multiple quantum wells (MQWs) has been studied by simulations and electroluminescence measurements. With increasing aluminum mole fraction in the quantum well x, the in-plane intensity of transverse-electric (TE) polarized light decreases relative to that of the transverse-magnetic polarized light, attributed to a reordering of the valence bands in Al{sub x}Ga{sub 1−x}N. Using k ⋅ p theoretical model calculations, the AlGaN MQW active region design has been optimized, yielding increased TE polarization and thus higher extraction efficiency for bottom-emitting LEDs in the deep UV spectral range. Using (i) narrow quantum wells, (ii) barriers with high aluminum mole fractions, and (iii) compressive growth on patterned aluminum nitride sapphire templates, strongly TE-polarized emission was observed at wavelengths as short as 239 nm.

Characterization of as-grown and adsorbate-covered N-polar InN surfaces using in situ photoelectron spectroscopy

International Nuclear Information System (INIS)

Eisenhardt, Anja; Himmerlich, Marcel; Krischok, Stefan

2012-01-01

The surface electronic properties and adsorption behaviour of as-grown and oxidized N-polar InN films are characterized by photoelectron spectroscopy (XPS, UPS). The epitaxial growth of the InN layers was performed by plasma-assisted molecular beam epitaxy on GaN/6H-SiC(000-1). After growth and in situ characterization the InN surfaces were exposed to molecular oxygen to evaluate the adsorption behaviour of O 2 on N-polar InN and to study its impact on the surface electronic properties of the III-nitride material. The results are compared with studies on In-polar InN on GaN/sapphire templates. The as-grown N-polar InN surface exhibits a pronounced surface state at a binding energy of ∝1.6 eV. The valence band minimum lies about 0.8-1.0 eV below the surface Fermi level. Additionally, the XPS core level binding energies for InN(000-1) are reduced compared to InN(0001) films, indicating different surface band bending for clean N-polar and In-polar InN, respectively. The interaction of molecular oxygen with the InN(000-1) surface leads to a downward band bending by 0.1 eV compared to the initial state. Additional adsorption of species from the residual gas of the UHV chamber increases the surface downward band bending. Furthermore two pronounced oxygen related states with an energy distance of ∝5 eV could be detected in the valence band region. The adsorbed oxygen results in an additional component in the N1s core level spectra, which is interpreted as formation of NO x bonds. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

Effects Of Spontaneous And Piezoelectric Polarization On The Electronic Properties Of AlGaN/GaN Heterostructures

International Nuclear Information System (INIS)

Demir, M.

2010-01-01

Nitride containing semiconductors and their alloys are used to produce hetero structures where materials with different energy gaps are grown on top of each other so that quantum wells capable of holding free electrons in two dimensions are formed. The carriers in the wells are free to move along the hetero interface but their motion in the direction of growth is restricted. While the density of electron gas depends on the doping concentration and the dimensions of the hetero structure among others, another important parameter that determines the electron density is the spontaneous polarization in the material and piezoelectric polarization near the hetero interface. Polarization is so effective that in some cases it is possible to get electron concentrations as high as 10 1 2-10 1 3 cm - 2 even in the absence of any intentional doping. In this study the electronic properties of an AlGaN/GaN structure is investigated by solving the Poisson/Schroedinger equation self-consistently in the modulation doped hetero structure. The effect of spacer, doping concentration, dimensions of the structure and temperature and especially the spontaneous and piezoelectric polarizations on the electronic properties are investigated.

Spin current and electrical polarization in GaN double-barrier structures

OpenAIRE

Litvinov, V. I.

2007-01-01

Tunnel spin polarization in a piezoelectric AlGaN/GaN double barrier structure is calculated. It is shown that the piezoelectric field and the spontaneous electrical polarization increase an efficiency of the tunnel spin injection. The relation between the electrical polarization and the spin orientation allows engineering a zero magnetic field spin injection manipulating the lattice-mismatch strain with an Al-content in the barriers.

High flux polarized neutrons triple-axis spectrometer: 2T (LLB-Saclay)

International Nuclear Information System (INIS)

Bourges, Ph.; Hennion, B.; Sidis, Y.; Boutrouille, Ph.; Baroni, P.

1999-01-01

A description of the performance of the newly designed thermal beam triple-axis spectrometer, 2T at LLB (Saclay) is given. The beam tube will be increased to 50 x 120 mm 2 (HxV) before the monochromator. A gain of about a factor 2 on the neutron flux at the monitor position is expected after this operation, scheduled on April/May 1999. Polarized neutrons beam option will be installed on this triple axis. The polarization is obtained using high quality heusler crystals recently grown at ILL. The size of both heusler monochromator and analyzer have been chosen to fully cover the beam size. The monochromator (analyzer) will be equipped with a vertical (horizontal) curvature. The flux of the polarized beam on the detector is then expected to be 5 times better than IN20 at ILL (best existing polarized neutrons triple-axis on thermal beam) with incident energy upto 75 MeV. (author)

Photoassisted Kelvin probe force microscopy at GaN surfaces: The role of polarity

Science.gov (United States)

Wei, J. D.; Li, S. F.; Atamuratov, A.; Wehmann, H.-H.; Waag, A.

2010-10-01

The behavior of GaN surfaces during photoassisted Kelvin probe force microscopy is demonstrated to be strongly dependant on surface polarity. The surface photovoltage of GaN surfaces illuminated with above-band gap light is analyzed as a function of time and light intensity. Distinct differences between Ga-polar and N-polar surfaces could be identified, attributed to photoinduced chemisorption of oxygen during illumination. These differences can be used for a contactless, nondestructive, and easy-performable analysis of the polarity of GaN surfaces.

High-efficiency optical pumping of nuclear polarization in a GaAs quantum well

Science.gov (United States)

Mocek, R. W.; Korenev, V. L.; Bayer, M.; Kotur, M.; Dzhioev, R. I.; Tolmachev, D. O.; Cascio, G.; Kavokin, K. V.; Suter, D.

2017-11-01

The dynamic polarization of nuclear spins by photoexcited electrons is studied in a high quality GaAs/AlGaAs quantum well. We find a surprisingly high efficiency of the spin transfer from the electrons to the nuclei as reflected by a maximum nuclear field of 0.9 T in a tilted external magnetic field of 1 T strength only. This high efficiency is due to a low leakage of spin out of the polarized nuclear system, because mechanisms of spin relaxation other than the hyperfine interaction are strongly suppressed, leading to a long nuclear relaxation time of up to 1000 s. A key ingredient to that end is the low impurity concentration inside the heterostructure, while the electrostatic potential from charged impurities in the surrounding barriers becomes screened through illumination by which the spin relaxation time is increased compared to keeping the system in the dark. This finding indicates a strategy for obtaining high nuclear spin polarization as required for long-lasting carrier spin coherence.

Significantly improved surface morphology of N-polar GaN film grown on SiC substrate by the optimization of V/III ratio

Science.gov (United States)

Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

2018-04-01

In this paper, N-polar GaN films with different V/III ratios were grown on vicinal C-face SiC substrates by metalorganic chemical vapor deposition. During the growth of N-polar GaN film, the V/III ratio was controlled by adjusting the molar flow rate of ammonia while keeping the trimethylgallium flow rate unchanged. The influence of the V/III ratio on the surface morphology of N-polar GaN film has been studied. We find that the surface root mean square roughness of N-polar GaN film over an area of 20 × 20 μm2 can be reduced from 8.13 to 2.78 nm by optimization of the V/III ratio. Then, using the same growth conditions, N-polar InGaN/GaN multiple quantum wells (MQWs) light-emitting diodes (LEDs) were grown on the rough and the smooth N-polar GaN templates, respectively. Compared with the LED grown on the rough N-polar GaN template, dramatically improved interface sharpness and luminescence uniformity of the InGaN/GaN MQWs are achieved for the LED grown on the smooth N-polar GaN template.

Polarity and microstructure in InN thin layers grown by MOVPE

International Nuclear Information System (INIS)

Kuwano, N.; Nakahara, Y.; Amano, H.

2006-01-01

Microstructures in InN grown on sapphire (0001) and yttria-stabilized zirconia (YSZ) (111) by metal-organic vapor phase epitaxy (MOVPE) were analyzed by means of transmission electron microscopy (TEM) in order to clarify the growth process. Special attention was paid to the selectivity of the crystal polarity of InN. The InN thin films grown on sapphire after nitridation has a flat surface while those grown on YSZ has hillocks on the surface. The crystal polarity was determined by comparing the experimentally observed intensity distribution in convergent beam electron diffraction (CBED) disks with those simulated by the Broch-wave method. It was found that the InN grown on the sapphire has a nitrogen-polarity and the one on YSZ has a mixture of In- and N-polarities. The effect of surface-nitridation of sapphire on the growth process is also discussed (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Polarization transfer in (p,n) reactions at 495 MeV

International Nuclear Information System (INIS)

Taddeucci, T.N.

1991-01-01

Polarization transfer observables have been measured with the NTOF facility at LAMPF for (p,n) reactions at 495 MeV. Measurements of the longitudinal polarization transfer parameter D LL for transitions to discrete states at 0 degrees show convincing evidence for tensor interaction effects. Complete sets of polarization transfer observables have been measured for quasifree (p,n) reactions on 2 H, 12 C, 40 Ca at a scattering angle of 18 degrees. These measurements show no evidence for an enhancement in the isovector spin longitudinal response. 19 refs., 10 figs

Polarity in GaN and ZnO: Theory, measurement, growth, and devices

Science.gov (United States)

Zúñiga-Pérez, Jesús; Consonni, Vincent; Lymperakis, Liverios; Kong, Xiang; Trampert, Achim; Fernández-Garrido, Sergio; Brandt, Oliver; Renevier, Hubert; Keller, Stacia; Hestroffer, Karine; Wagner, Markus R.; Reparaz, Juan Sebastián; Akyol, Fatih; Rajan, Siddharth; Rennesson, Stéphanie; Palacios, Tomás; Feuillet, Guy

2016-12-01

The polar nature of the wurtzite crystalline structure of GaN and ZnO results in the existence of a spontaneous electric polarization within these materials and their associated alloys (Ga,Al,In)N and (Zn,Mg,Cd)O. The polarity has also important consequences on the stability of the different crystallographic surfaces, and this becomes especially important when considering epitaxial growth. Furthermore, the internal polarization fields may adversely affect the properties of optoelectronic devices but is also used as a potential advantage for advanced electronic devices. In this article, polarity-related issues in GaN and ZnO are reviewed, going from theoretical considerations to electronic and optoelectronic devices, through thin film, and nanostructure growth. The necessary theoretical background is first introduced and the stability of the cation and anion polarity surfaces is discussed. For assessing the polarity, one has to make use of specific characterization methods, which are described in detail. Subsequently, the nucleation and growth mechanisms of thin films and nanostructures, including nanowires, are presented, reviewing the specific growth conditions that allow controlling the polarity of such objects. Eventually, the demonstrated and/or expected effects of polarity on the properties and performances of optoelectronic and electronic devices are reported. The present review is intended to yield an in-depth view of some of the hot topics related to polarity in GaN and ZnO, a fast growing subject over the last decade.

Solar-blind AlxGa1-xN/AlN/SiC photodiodes with a polarization-induced electron filter

Science.gov (United States)

Rodak, L. E.; Sampath, A. V.; Gallinat, C. S.; Chen, Y.; Zhou, Q.; Campbell, J. C.; Shen, H.; Wraback, M.

2013-08-01

Heterogeneous n-III-nitride/i-p silicon carbide (SiC) photodetectors have been demonstrated that enable the tailoring of the spectral response in the solar blind region below 280 nm. The negative polarization induced charge at the aluminum gallium nitride (AlxGa1-xN)/aluminum nitride (AlN) interface in conjunction with the positive polarization charge at the AlN/SiC interface creates a large barrier to carrier transport across the interface that results in the selective collection of electrons photoexcited to the Γ and L valleys of SiC while blocking the transport of electrons generated in the M valley. In addition, the AlxGa1-xN alloys act as transparent windows that enhance the collection of carriers generated by high energy photons in the fully depleted SiC absorption regions. These two factors combine to create a peak external quantum efficiency of 76% at 242 nm, along with a strong suppression of the long-wavelength response from 260 nm to 380 nm.

High precision neutron polarization for PERC

International Nuclear Information System (INIS)

Klauser, C.

2013-01-01

The decay of the free neutron into a proton, an electron and an anti-electron neutrino offers a simple system to study the semi-leptonic weak decay. High precision measurements of angular correlation coefficients of this decay provide the opportunity to test the standard model on the low energy frontier. The Proton Electron Radiation Channel PERC is part of a new generation of expriments pushing the accuracy of such an angular correlation coefficient measurement towards 10 -4 . Past experiments have been limited to an accuracy of 10 -3 with uncertainties on the neutron polarization as one of the leading systematic errors. This thesis focuses on the development of a stable, highly precise neutron polarization for a large, divergent cold neutron beam. A diagnostic tool that provides polarization higher than 99.99 % and analyzes with an accuracy of 10 -4 , the Opaque Test Bench, is presented and validated. It consists of two highly opaque polarized helium cells. The Opaque Test Bench reveals depolarizing effects in polarizing supermirrors commonly used for polarization in neutron decay experiments. These effects are investigated in detail. They are due to imperfect lateral magnetization in supermirror layers and can be minimized by significantly increased magnetizing fields and low incidence angle and supermirror factor m. A subsequent test in the crossed (X-SM) geometry demonstrated polarizations up to 99.97% from supermirrors only, improving neutron polarization with supermirrors by an order of magnitude. The thesis also discusses other neutron optical components of the PERC beamline: Monte-Carlo simulations of the beamline under consideration of the primary guide are carried out. In addition, calculation shows that PERC would statistically profit from an installation at the European Spallation source. Furthermore, beamline components were tested. A radio-frequency spin flipper was confirmed to work with an efficiency higher than 0.9999. (author) [de

Retrofit of a high power Nd:glass laser system with liquid crystal polarizers

International Nuclear Information System (INIS)

Jacobs, S.D.; Cerqua, K.A.; Kessler, T.J.; Seka, W.; Bahr, R.

1985-03-01

The glass development laser (GDL), has been operating at the Laboratory for Laser Energetics since 1978. This Nd:phosphate glass system produces high peak power optical radiation at lambda = 1054 nm or lambda = 351 nm for use in studying the interaction physics of intense laser beams with matter. The amplifier staging incorporates the propagation of linearly and circularly polarized light in rod amplifiers which vary in diameter from 16 mm to 90 mm. Numerous quartz or mica quarter waveplates and Brewster angle dielectric thin film polarizers are required to limit accumulated phase retardation between amplification stages and to accommodate interstage Pockels' cell isolation switches. We have recently replaced most of the waveplate-dielectric polarizer combinations in GDL with liquid crystal polarizers. Comprised of 11 μm thick cholesteric fluids sandwiched between optical quality glass plates, liquid crystal polarizers provide excellent polarization properties, low insertion loss, angular insensitivity, and laser damage resistance at lambda = 1054 nm. The design, fabrication, and performance of left-handed and right-handed circular polarizers will be discussed

Recent advance in polar seismology: Global impact of the International Polar Year

Science.gov (United States)

Kanao, Masaki; Zhao, Dapeng; Wiens, Douglas A.; Stutzmann, Éléonore

2015-03-01

The most exciting initiative for the recent polar studies was the International Polar Year (IPY) in 2007-2008. The IPY has witnessed a growing community of seismologists who have made considerable efforts to acquire high-quality data in polar regions. It also provided an excellent opportunity to make significant advances in seismic instrumentation of the polar regions to achieve scientific targets involving global issues. Taking these aspects into account, we organize and publish a special issue in Polar Science on the recent advance in polar seismology and cryoseismology as fruitful achievements of the IPY.

Single photon detector with high polarization sensitivity.

Science.gov (United States)

Guo, Qi; Li, Hao; You, LiXing; Zhang, WeiJun; Zhang, Lu; Wang, Zhen; Xie, XiaoMing; Qi, Ming

2015-04-15

Polarization is one of the key parameters of light. Most optical detectors are intensity detectors that are insensitive to the polarization of light. A superconducting nanowire single photon detector (SNSPD) is naturally sensitive to polarization due to its nanowire structure. Previous studies focused on producing a polarization-insensitive SNSPD. In this study, by adjusting the width and pitch of the nanowire, we systematically investigate the preparation of an SNSPD with high polarization sensitivity. Subsequently, an SNSPD with a system detection efficiency of 12% and a polarization extinction ratio of 22 was successfully prepared.

Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

Science.gov (United States)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2017-02-01

III-nitride based ultraviolet (UV) light emitting diodes (LEDs) are of considerable interest in replacing gas lasers and mercury lamps for numerous applications. Specifically, AlGaN quantum well (QW) based LEDs have been developed extensively but the external quantum efficiencies of which remain less than 10% for wavelengths UV wavelengths is by the use of the AlGaN-delta-GaN QW where the insertion of the delta-GaN layer can ensure the dominant conduction band (C) - heavyhole (HH) transition, leading to large transverse-electric (TE) optical output. Here, we proposed and investigated the physics and polarization-dependent optical characterizations of AlN-delta- GaN QW UV LED at 300 nm. The LED structure is grown by Molecular Beam Epitaxy (MBE) where the delta-GaN layer is 3-4 monolayer (QW-like) sandwiched by 2.5-nm AlN sub-QW layers. The physics analysis shows that the use of AlN-delta-GaN QW ensures a larger separation between the top HH subband and lower-energy bands, and strongly localizes the electron and HH wave functions toward the QW center and hence resulting in 30-time enhancement in TEpolarized spontaneous emission rate, compared to that of a conventional Al0.35Ga0.65N QW. The polarization-dependent electroluminescence measurements confirm our theoretical analysis; a dominant TE-polarized emission was obtained at 298 nm with a minimum transverse-magnetic (TM) polarized emission, indicating the feasibility of high-efficiency TEpolarized UV emitters based on our proposed QW structure.

High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE.

Science.gov (United States)

Huo, Qin; Shao, Yongliang; Wu, Yongzhong; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

2018-02-16

In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/Al 2 O 3 (MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/Al 2 O 3 (TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method. The GaN crystals were separated spontaneously from the TEMGA template with the assistance of voids formed by the etched nanopores. Several techniques were utilized to characterize the quality of the free-standing GaN crystals obtained from the TEMGA template. Results showed that the quality of the as-obtained GaN crystals was improved obviously compared with those grown on the MGA. This convenient technique can be applied to grow high-quality free-standing GaN crystals.

High luminosity polarized proton collisions at RHIC

International Nuclear Information System (INIS)

Roser, T.

2001-01-01

The Brookhaven Relativistic Heavy Ion Collider (RHIC) provides the unique opportunity to collide polarized proton beams at a center-of-mass energy of up to 500 GeV and luminosities of up to 2 x 10 32 cm -2 s -1 . Such high luminosity and high energy polarized proton collisions will open up the possibility of studying spin effects in hard processes. However, the acceleration of polarized beams in circular accelerators is complicated by the numerous depolarizing spin resonances. Using a partial Siberian snake and a rf dipole that ensure stable adiabatic spin motion during acceleration has made it possible to accelerate polarized protons to 25 GeV at the Brookhaven AGS. After successful operation of RHIC with gold beams polarized protons from the AGS have been successfully injected into RHIC and accelerated using a full Siberian snakes built from four superconducting helical dipoles. A new high energy proton polarimeter was also successfully commissioned. Operation with two snakes per RHIC ring is planned for next year

Substrate dependence of TM-polarized light emission characteristics of BAlGaN/AlN quantum wells

Science.gov (United States)

Park, Seoung-Hwan; Ahn, Doyeol

2018-06-01

To study the substrate dependence of light emission characteristics of transverse-magnetic (TM)-polarized light emitted from BAlGaN/AlN quantum wells (QWs) grown on GaN and AlN substrates were investigated theoretically. It is found that the topmost valence subband for QW structures grown on AlN substrate, is heavy hole state (HH1) while that for QW structures grown on GaN substrate is crystal-field split off light hole state (CL1), irrespective of the boron content. Since TM-polarized light emission is associated with the light hole state, the TM-polarized emission peak of BAlGaN/AlN QW structures grown on GaN substrate is expected to be much larger than that of the QW structure grown on AlN substrate. Also, both QW structures show that the spontaneous emission peak of BAlGaN/AlN QW structures would be improved with the inclusion of the boron. However, it rapidly begins to decrease when the boron content exceeds a critical value.

Impacts of Thermal Atomic Layer-Deposited AlN Passivation Layer on GaN-on-Si High Electron Mobility Transistors.

Science.gov (United States)

Zhao, Sheng-Xun; Liu, Xiao-Yong; Zhang, Lin-Qing; Huang, Hong-Fan; Shi, Jin-Shan; Wang, Peng-Fei

2016-12-01

Thermal atomic layer deposition (ALD)-grown AlN passivation layer is applied on AlGaN/GaN-on-Si HEMT, and the impacts on drive current and leakage current are investigated. The thermal ALD-grown 30-nm amorphous AlN results in a suppressed off-state leakage; however, its drive current is unchanged. It was also observed by nano-beam diffraction method that thermal ALD-amorphous AlN layer barely enhanced the polarization. On the other hand, the plasma-enhanced chemical vapor deposition (PECVD)-deposited SiN layer enhanced the polarization and resulted in an improved drive current. The capacitance-voltage (C-V) measurement also indicates that thermal ALD passivation results in a better interface quality compared with the SiN passivation.

Polarity-inverted lateral overgrowth and selective wet-etching and regrowth (PILOSWER) of GaN.

Science.gov (United States)

Jang, Dongsoo; Jue, Miyeon; Kim, Donghoi; Kim, Hwa Seob; Lee, Hyunkyu; Kim, Chinkyo

2018-03-07

On an SiO 2 -patterned c-plane sapphire substrate, GaN domains were grown with their polarity controlled in accordance with the pattern. While N-polar GaN was grown on hexagonally arranged circular openings, Ga-polar GaN was laterally overgrown on mask regions due to polarity inversion occurring at the boundary of the circular openings. After etching of N-polar GaN on the circular openings by H 3 PO 4 , this template was coated with 40-nm Si by sputtering and was slightly etched by KOH. After slight etching, a thin layer of Si left on the circular openings of sapphire,but not on GaN, was oxidized during thermal annealing and served as a dielectric mask during subsequent regrowth. Thus, the subsequent growth of GaN was made only on the existing Ga-polar GaN domains, not on the circular openings of the sapphire substrate. Transmission electron microscopy analysis revealed no sign of threading dislocations in this film. This approach may help fabricating an unholed and merged GaN film physically attached to but epitaxially separated from the SiO 2 -patterned sapphire.

Hall effect measurements of high-quality M n3CuN thin films and the electronic structure

Science.gov (United States)

Matsumoto, Toshiki; Hatano, Takafumi; Urata, Takahiro; Iida, Kazumasa; Takenaka, Koshi; Ikuta, Hiroshi

2017-11-01

The physical properties of M n3CuN were studied using thin films. We found that an annealing process was very effective to improve the film quality, the key of which was the use of Ti that prevented the formation of oxide impurities. Using these high-quality thin films, we found strong strain dependence for the ferromagnetic transition temperature (TC) and a sign change of the Hall coefficient at TC. The analysis of Hall coefficient data revealed a sizable decrease of hole concentration and a large increase of electron mobility below TC, which is discussed in relation to the electronic structure of this material.

ANÁLISIS DE LA FINALIZACIÓN DEL ATAQUE EN PARTIDOS IGUALADOS DE BALONMANO DE ALTO NIVEL MEDIANTE COORDENADAS POLARES [Analysis of the finalization of the attack in equalized games of high level handball using polar coordinates

Directory of Open Access Journals (Sweden)

Andrés González Ramírez

2013-07-01

Full Text Available En este trabajo se estudia la eficacia de la finalización del ataque en los momentos finales de partidos igualados de balonmano de alto nivel. Para ello se analizaron los diez minutos finales de 55 partidos pertenecientes a los CM 2011 y JJOO 2012 de categoría masculina y femenina donde el marcador final no superó los tres goles de diferencia entre ganador y perdedor. El diseño de la investigación se realizó siguiendo los pasos que establece la metodología observacional. Se construyó un instrumento de observación “ad hoc” y  se cumplieron los requisitos para garantizar la calidad del dato. Utilizando la técnica de coordenadas polares se representó la relación secuencial entre las diferentes conductas del sistema de categorías. Como resultados destacados se observó la vinculación entre la interceptación y la obtención de gol tanto en ganadores como en perdedores; la asociación de lanzamientos atajados a ganadores; y la relación de fallos de lanzamiento y errores previos al lanzamiento en perdedores.AbstractIn this job the efficiency of the finalization of the attack in the final moments of equalized high level handball games is studied. For that reason the last ten minutes of 55 male and female matches of the World Championship 2011 and Olympic Games 2012 where the final score was not over a 3 goal difference between winner and loser, were analyzed. The design of the investigation was following the guidelines established by the observational methodology. An observational instrument “ad hoc” was developed and the requirements to guaranteed the data quality were accomplished. Using the polar coordinate technique, the sequential relationship between the different behaviors of the category system was presented. As highlighted results the following were seen: relationship between the interception and a goal obtained either in winner or loser; the association of throws saved to winner; the relationship between mistakes in

High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation

Energy Technology Data Exchange (ETDEWEB)

Shekari, L., E-mail: lsg09_phy089@student.usm.my [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia); Ramizy, A.; Omar, K.; Hassan, H. Abu; Hassan, Z. [Nano-Optoelectronics Research and Technology Laboratory, School of Physics, Universiti Sains Malaysia, 11800 USM, Penang (Malaysia)

2012-12-15

Highlights: Black-Right-Pointing-Pointer A new kind of substrate (porous silicon) was used. Black-Right-Pointing-Pointer Also this research introduces an easy and safe method to grow high quality GaN NWs. Black-Right-Pointing-Pointer This is a new growth process to decrease the cost, complexity of growth of GaN NWs. Black-Right-Pointing-Pointer It is a controllable method to synthesize GaN NWs by thermal evaporation. - Abstract: Nanowires (NWs) of GaN thin films were prepared on as-grown Si (1 1 1) and porous silicon (PS) substrates using thermal evaporation method. The film growth produced high-quality wurtzite GaN NWs. The size, morphology, and nanostructures of the crystals were investigated through scanning electron microscopy, high-resolution X-ray diffraction and photoluminescence spectroscopy. The NWs grown on porous silicon were thinner, longer and denser compared with those on as-grown Si. The energy band gap of the NWs grown on PS was larger than that of NWs on as-grown Si. This is due to the greater quantum confinement effects of the crystalline structure of the NWs grown on PS.

Double-spin asymmetry of J/ψ production in polarized pp-collisions at HERA-N-vector polarized

International Nuclear Information System (INIS)

Teryaev, O.; Tkabladze, A.

1996-01-01

We calculated the color-octet contribution to the double spin asymmetry of J/ψ hadroproduction with nonzero transverse momenta at fixed target energies √ s ≅ 40 GeV. It is shown that color-octet contribution is dominant in the asymmetries. The expected asymmetries and statistical errors in a future option of HERA with longitudinally polarized protons at √ s = 39 GeV (HERA-N polarized) should allow one to distinguish between different parametrizations for polarized gluon distribution in proton

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang; Wang, Junxi; Zhang, Yun; Cong, Peipei; Sun, Lili; Tian, Yingdong; Zhao, Chao; Li, Jinmin

2015-01-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

AlGaN-based deep-ultraviolet light-emitting diodes grown on high-quality AlN template using MOVPE

KAUST Repository

Yan, Jianchang

2015-03-01

In this article, we report the growth of high-quality AlN film using metal-organic vapor phase epitaxy. Three layers of middle-temperature (MT) AlN were introduced during the high-temperature (HT) AlN growth. During the MT-AlN layer growth, aluminum and nitrogen sources were closed for 6 seconds after every 5-nm MT-AlN, while H2 carrier gas was always on. The threading dislocation density in an AlN epi-layer on a sapphire substrate was reduced by almost half. AlGaN-based deep-ultraviolet light-emitting diodes were further fabricated based on the AlN/sapphire template. At 20 mA driving current, the emitted peak wavelength is 284.5 nm and the light output power exceeds 3 mW.

Charge polarization effects and hole spectra characteristics in AlxGa1-xN/GaN superlattices

International Nuclear Information System (INIS)

Assaoui, Fatna; Pereyra, Pedro

2001-10-01

We study the effects of charge polarization on the extended physical properties of superlattices, such as transmission coefficients and valence band structure. We consider both linear and parabolic modulation of the band edge. Based on the theory of finite periodic systems (TFPS), analytic expressions and high precision calculations of the relevant physical quantities for n-cell systems are obtained. New and also well-known features of these systems are identified. Besides the well-known energy bandstructure, we also have the field bandstructure, with interesting characteristics. Wider field gaps at stronger internal electric fields and higher density of field bands for larger layer widths are some of these characteristics. Well defined level density asymmetries identify the minibands induced by charge polarization or the so-called Quantum Confining Stark Effect. We present the n-cell transmission amplitudes, transmission coefficients and miniband structures for different values of the relevant parameters. (author)

P-n junction diodes with polarization induced p-type graded InxGa1-xN layer

Science.gov (United States)

Enatsu, Yuuki; Gupta, Chirag; Keller, Stacia; Nakamura, Shuji; Mishra, Umesh K.

2017-10-01

In this study, p-n junction diodes with polarization induced p-type layer are demonstrated on Ga polar (0001) bulk GaN substrates. A quasi-p-type region is obtained by linearly grading the indium composition in un-doped InxGa1-xN layers from 0% to 5%, taking advantage of the piezoelectric and spontaneous polarization fields which exist in group III-nitride heterostructures grown in the typical (0001) or c-direction. The un-doped graded InxGa1-xN layers needed to be capped with a thin Mg-doped InxGa1-xN layer to make good ohmic contacts and to reduce the on-resistance of the p-n diodes. The Pol-p-n junction diodes exhibited similar characteristics compared to reference samples with traditional p-GaN:Mg layers. A rise in breakdown voltage from 30 to 110 V was observed when the thickness of the graded InGaN layer was increased from 100 to 600 nm at the same grade composition.

Polarization of stacking fault related luminescence in GaN nanorods

Directory of Open Access Journals (Sweden)

G. Pozina

2017-01-01

Full Text Available Linear polarization properties of light emission are presented for GaN nanorods (NRs grown along [0001] direction on Si(111 substrates by direct-current magnetron sputter epitaxy. The near band gap photoluminescence (PL measured at low temperature for a single NR demonstrated an excitonic line at ∼3.48 eV and the stacking faults (SFs related transition at ∼3.43 eV. The SF related emission is linear polarized in direction perpendicular to the NR growth axis in contrast to a non-polarized excitonic PL. The results are explained in the frame of the model describing basal plane SFs as polymorphic heterostructure of type II, where anisotropy of chemical bonds at the interfaces between zinc blende and wurtzite GaN subjected to in-built electric field is responsible for linear polarization parallel to the interface planes.

Piezoelectric coefficients and spontaneous polarization of ScAlN

International Nuclear Information System (INIS)

Caro, Miguel A; Laurila, Tomi; Zhang, Siyuan; Moram, Michelle A; Riekkinen, Tommi; Ylilammi, Markku; Molarius, Jyrki; Lopez-Acevedo, Olga

2015-01-01

We present a computational study of spontaneous polarization and piezoelectricity in Sc x Al 1−x N alloys in the compositional range from x = 0 to x = 0.5, obtained in the context of density functional theory and the Berry-phase theory of electric polarization using large periodic supercells. We report composition-dependent values of piezoelectric coefficients e ij , piezoelectric moduli d ij and elastic constants C ij . The theoretical findings are complemented with experimental measurement of e 33 for a series of sputtered ScAlN films carried out with a piezoelectric resonator. The rapid increase with Sc content of the piezoelectric response reported in previous studies is confirmed for the available data. A detailed description of the full methodology required to calculate the piezoelectric properties of ScAlN, with application to other complex alloys, is presented. In particular, we find that the large amount of internal strain present in ScAlN and its intricate relation with electric polarization make configurational sampling and the use of large supercells at different compositions necessary in order to accurately derive the piezoelectric response of the material. (paper)

Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

International Nuclear Information System (INIS)

Lee, Suk-Hun; Lee, Hyun-Hwi; Jung, Jong-Jae; Moon, Young-Bu; Kim, Tae Hoon; Baek, Jong Hyeob; Yu, Young Moon

2004-01-01

The role of AlInN 1st /GaN/AlInN 2nd /GaN multi-layer buffer (MLB) on the growth of the high quality GaN epilayers was demonstrated by atomic force microscope (AFM), X-ray diffraction (XRD), photoluminescence, and Hall measurement. The surface morphology and crystalline quality of GaN epilayers were considerably dependent on AlInN layers thicknesses rather than those of GaN inter layers. With optimal thickness of 2 nd AlInN layer, the pit density of GaN epilayers was substantially reduced. Also, the RMS roughness of the well ordered terraces generated on the GaN surface was 1.8 A at 5 x 5 μm 2 . The omega-rocking width of GaN(0002) Bragg peak and Hall mobility of GaN epilayers grown on AlInN 1st /GaN/AlInN 2nd /GaN MLB were 190 arcsec and 500 cm 2 /Vs, while those values of GaN epilayers on single GaN buffer layer were 250 arcsec and 250 cm 2 /Vs, respectively. Especially, the light output power and operating voltage of the fabricated light emitting diodes with this new buffer layer was about 5 mW and 3.1 V (dominant luminous wavelength ∝460 nm) at 20 mA, respectively. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Charge transport in non-polar and semi-polar III-V nitride heterostructures

International Nuclear Information System (INIS)

Konar, Aniruddha; Verma, Amit; Fang, Tian; Zhao, Pei; Jana, Raj; Jena, Debdeep

2012-01-01

Compared to the intense research focus on the optical properties, the transport properties in non-polar and semi-polar III-nitride semiconductors remain relatively unexplored to date. The purpose of this paper is to discuss charge-transport properties in non-polar and semi-polar orientations of GaN in a comparative fashion to what is known for transport in polar orientations. A comprehensive approach is adopted, starting from an investigation of the differences in the electronic bandstructure along different polar orientations of GaN. The polarization fields along various orientations are then discussed, followed by the low-field electron and hole mobilities. A number of scattering mechanisms that are specific to non-polar and semi-polar GaN heterostructures are identified, and their effects are evaluated. Many of these scattering mechanisms originate due to the coupling of polarization with disorder and defects in various incarnations depending on the crystal orientation. The effect of polarization orientation on carrier injection into quantum-well light-emitting diodes is discussed. This paper ends with a discussion of orientation-dependent high-field charge-transport properties including velocity saturation, instabilities and tunneling transport. Possible open problems and opportunities are also discussed. (paper)

High beam quality and high energy short-pulse laser with MOPA

Science.gov (United States)

Jin, Quanwei; Pang, Yu; Jiang, JianFeng; Tan, Liang; Cui, Lingling; Wei, Bin; Sun, Yinhong; Tang, Chun

2018-03-01

A high energy, high beam quality short-pulse diode-pumped Nd:YAG master oscillator power-amplifier (MOPA) laser with two amplifier stages is demonstrated. The two-rod birefringence compensation was used as beam quality controlling methods, which presents a short-pulse energy of 40 mJ with a beam quality value of M2 = 1.2 at a repetition rate of 400Hz. The MOPA system delivers a short-pulse energy of 712.5 mJ with a pulse width of 12.4 ns.The method of spherical aberration compensation is improved the beam quality, a M2 factor of 2.3 and an optical-to-optical efficiency of 27.7% is obtained at the maximum laser out power.The laser obtained 1.4J out energy with polarization integration.

Bright circularly polarized soft X-ray high harmonics for X-ray magnetic circular dichroism.

Science.gov (United States)

Fan, Tingting; Grychtol, Patrik; Knut, Ronny; Hernández-García, Carlos; Hickstein, Daniel D; Zusin, Dmitriy; Gentry, Christian; Dollar, Franklin J; Mancuso, Christopher A; Hogle, Craig W; Kfir, Ofer; Legut, Dominik; Carva, Karel; Ellis, Jennifer L; Dorney, Kevin M; Chen, Cong; Shpyrko, Oleg G; Fullerton, Eric E; Cohen, Oren; Oppeneer, Peter M; Milošević, Dejan B; Becker, Andreas; Jaroń-Becker, Agnieszka A; Popmintchev, Tenio; Murnane, Margaret M; Kapteyn, Henry C

2015-11-17

We demonstrate, to our knowledge, the first bright circularly polarized high-harmonic beams in the soft X-ray region of the electromagnetic spectrum, and use them to implement X-ray magnetic circular dichroism measurements in a tabletop-scale setup. Using counterrotating circularly polarized laser fields at 1.3 and 0.79 µm, we generate circularly polarized harmonics with photon energies exceeding 160 eV. The harmonic spectra emerge as a sequence of closely spaced pairs of left and right circularly polarized peaks, with energies determined by conservation of energy and spin angular momentum. We explain the single-atom and macroscopic physics by identifying the dominant electron quantum trajectories and optimal phase-matching conditions. The first advanced phase-matched propagation simulations for circularly polarized harmonics reveal the influence of the finite phase-matching temporal window on the spectrum, as well as the unique polarization-shaped attosecond pulse train. Finally, we use, to our knowledge, the first tabletop X-ray magnetic circular dichroism measurements at the N4,5 absorption edges of Gd to validate the high degree of circularity, brightness, and stability of this light source. These results demonstrate the feasibility of manipulating the polarization, spectrum, and temporal shape of high harmonics in the soft X-ray region by manipulating the driving laser waveform.

Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs

Science.gov (United States)

Rosales, Daniel; Gil, B.; Bretagnon, T.; Zhang, F.; Okur, S.; Monavarian, M.; Izioumskaia, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-03-01

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K-300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations.

Ultra-high polarity ceramics induced extrinsic high permittivity of polymers contributing to high permittivity of 2-2 series composites

Science.gov (United States)

Feng, Yefeng; Zhang, Jianxiong; Hu, Jianbing; Peng, Cheng; He, Renqi

2018-01-01

Induced polarization at interface has been confirmed to have significant impact on the dielectric properties of 2-2 series composites bearing Si-based semi-conductor sheet and polymer layer. By compositing, the significantly elevated high permittivity in Si-based semi-conductor sheet should be responsible for the obtained high permittivity in composites. In that case, interface interaction could include two aspects namely a strong electrostatic force from high polarity polymeric layer and a newborn high polarity induced in Si-based ceramic sheet. In this work, this class of interface induced polarization was successfully extended into another 2-2 series composite system made up of ultra-high polarity ceramic sheet and high polarity polymer layer. By compositing, the greatly improved high permittivity in high polarity polymer layer was confirmed to strongly contribute to the high permittivity achieved in composites. In this case, interface interaction should consist of a rather large electrostatic force from ultra-high polarity ceramic sheet with ionic crystal structure and an enhanced high polarity induced in polymer layer based on a large polarizability of high polarity covalent dipoles in polymer. The dielectric and conductive properties of four designed 2-2 series composites and their components have been detailedly investigated. Increasing of polymer inborn polarity would lead to a significant elevating of polymer overall polarity in composite. Decline of inherent polarities in two components would result in a mild improving of polymer total polarity in composite. Introducing of non-polarity polymeric layer would give rise to a hardly unaltered polymer overall polarity in composite. The best 2-2 composite could possess a permittivity of ˜463 at 100 Hz 25.7 times of the original permittivity of polymer in it. This work might offer a facile route for achieving the promising composite dielectrics by constructing the 2-2 series samples from two high polarity

TESLA-N electron scattering with polarized targets at TESLA

International Nuclear Information System (INIS)

Korotokov, V.

2001-01-01

Measurements of polarized eN scattering can be realized at the TESLA linear collider facility at DESY with luminosities that are about two orders of magnitude higher than those expected for other experiments at comparable energies. A large variety of polarized parton distribution and fragmentation functions can be determined with unprecedented accuracy, many of them for the first time

Exciplex fluorescence emission from simple organic intramolecular constructs in non-polar and highly polar media as model systems for DNA-assembled exciplex detectors.

Science.gov (United States)

Bichenkova, Elena V; Sardarian, Ali R; Wilton, Amanda N; Bonnet, Pascal; Bryce, Richard A; Douglas, Kenneth T

2006-01-21

Organic intramolecular exciplexes, N-(4-dimethylaminobenzyl)-N-(1-pyrenemethyl)amine (1) and N'-4-dimethylaminonaphthyl-N-(1-pyrenemethyl)amine (2), were used as model systems to reveal major factors affecting their exciplex fluorescence, and thus lay the basis for developing emissive target-assembled exciplexes for DNA-mounted systems in solution. These models with an aromatic pyrenyl hydrocarbon moiety as an electron acceptor appropriately connected to an aromatic dimethylamino electron donor component (N,N-dimethylaminophenyl or N,N-dimethylaminonaphthyl) showed strong intramolecular exciplex emission in both non-polar and highly polar solvents. The effect of dielectric constant on the maximum wavelength for exciplex emission was studied, and emission was observed for 1 and 2 over the full range of solvent from non-polar hydrocarbons up to N-methylformamide with a dielectric constant of 182. Quantum yields were determined for these intramolecular exciplexes in a range of solvents relative to that for Hoechst 33,258. Conformational analysis of 1 was performed both computationally and via qualitative 2D NMR using (1)H-NOESY experiments. The results obtained indicated the contribution of pre-folded conformation(s) to the ground state of 1 conducive to exciplex emission. This research provides the initial background for design of self-assembled, DNA-mounted exciplexes and underpins further development of exciplex-based hybridisation bioassays.

Polarization-insensitive optical gain characteristics of highly stacked InAs/GaAs quantum dots

International Nuclear Information System (INIS)

Kita, Takashi; Suwa, Masaya; Kaizu, Toshiyuki; Harada, Yukihiro

2014-01-01

The polarized optical gain characteristics of highly stacked InAs/GaAs quantum dots (QDs) with a thin spacer layer fabricated on an n + -GaAs (001) substrate were studied in the sub-threshold gain region. Using a 4.0-nm-thick spacer layer, we realized an electronically coupled QD superlattice structure along the stacking direction, which enabled the enhancement of the optical gain of the [001] transverse-magnetic (TM) polarization component. We systematically studied the polarized electroluminescence properties of laser devices containing 30 and 40 stacked InAs/GaAs QDs. The net modal gain was analyzed using the Hakki-Paoli method. Owing to the in-plane shape anisotropy of QDs, the polarization sensitivity of the gain depends on the waveguide direction. The gain showing polarization isotropy between the TM and transverse-electric polarization components is high for the [110] waveguide structure, which occurs for higher amounts of stacked QDs. Conversely, the isotropy of the [−110] waveguide is easily achieved even if the stacking is relatively low, although the gain is small.

Polarized targets in high energy physics

Energy Technology Data Exchange (ETDEWEB)

Cates, G.D. Jr. [Princeton Univ., NJ (United States)

1994-12-01

Various approaches are discussed for producing polarized nuclear targets for high energy physics experiments. As a unifying theme, examples are drawn from experiments to measure spin dependent structure functions of nucleons in deep inelastic scattering. This single physics goal has, over roughly two decades, been a driving force in advances in target technology. Actual or planned approaches have included solid targets polarized by dynamic nuclear polarization (DNP), several types of internal targets for use in storage rings, and gaseous {sup 3}He targets polarized by spin-exchange optical pumping. This last approach is the type of target adopted for SLAC E-142, an experiment to measure the spin structure function of the neutron, and is described in detail.

Polarized targets in high energy physics

International Nuclear Information System (INIS)

Cates, G.D. Jr.

1994-01-01

Various approaches are discussed for producing polarized nuclear targets for high energy physics experiments. As a unifying theme, examples are drawn from experiments to measure spin dependent structure functions of nucleons in deep inelastic scattering. This single physics goal has, over roughly two decades, been a driving force in advances in target technology. Actual or planned approaches have included solid targets polarized by dynamic nuclear polarization (DNP), several types of internal targets for use in storage rings, and gaseous 3 He targets polarized by spin-exchange optical pumping. This last approach is the type of target adopted for SLAC E-142, an experiment to measure the spin structure function of the neutron, and is described in detail

Lateral polarity control of III-nitride thin film and application in GaN Schottky barrier diode

Science.gov (United States)

Li, Junmei; Guo, Wei; Sheikhi, Moheb; Li, Hongwei; Bo, Baoxue; Ye, Jichun

2018-05-01

N-polar and III-polar GaN and AlN epitaxial thin films grown side by side on single sapphire substrate was reported. Surface morphology, wet etching susceptibility and bi-axial strain conditions were investigated and the polarity control scheme was utilized in the fabrication of Schottky barrier diode where ohmic contact and Schottky contact were deposited on N-polar domains and Ga-polar domains, respectively. The influence of N-polarity on on-state resistivity and I–V characteristic was discussed, demonstrating that lateral polarity structure of GaN and AlN can be widely used in new designs of optoelectronic and electronic devices. Project partially supported by the National Key Research and Development Program of China (No. 2016YFB0400802), the National Natural Science Foundation of China (No. 61704176), and the Open project of Zhejiang Key Laboratory for Advanced Microelectronic Intelligent Systems and Applications (No. ZJUAMIS1704).

High Intensity Polarized Electron Sources

International Nuclear Information System (INIS)

Poelker, Benard; Adderley, Philip; Brittian, Joshua; Clark, J.; Grames, Joseph; Hansknecht, John; McCarter, James; Stutzman, Marcy; Suleiman, Riad; Surles-law, Kenneth

2008-01-01

During the 1990s, at numerous facilities world wide, extensive RandD devoted to constructing reliable GaAs photoguns helped ensure successful accelerator-based nuclear and high-energy physics programs using spin polarized electron beams. Today, polarized electron source technology is considered mature, with most GaAs photoguns meeting accelerator and experiment beam specifications in a relatively trouble-free manner. Proposals for new collider facilities however, require electron beams with parameters beyond today's state-of-the-art and serve to renew interest in conducting polarized electron source RandD. And at CEBAF/Jefferson Lab, there is an immediate pressing need to prepare for new experiments that require considerably more beam current than before. One experiment in particular?Q-weak, a parity violation experiment that will look for physics beyond the Standard Model?requires 180 uA average current at polarization >80% for a duration of one year, with run-averaged helicity correlate

Fast, high-fidelity, all-optical and dynamically-controlled polarization gate using room-temperature atomic vapor

Energy Technology Data Exchange (ETDEWEB)

Li, Runbing [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); State Key Laboratory of Magnetic Resonance and Atomic and Molecular Physics, Wuhan Institute of Physics and Mathematics, Chinese Academy of Sciences, Wuhan 430071 (China); Center for Cold Atom Physics, Chinese Academy of Sciences, Wuhan 430071 (China); Zhu, Chengjie [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States); School of Physics Science and Engineering, Tongji University, Shanghai 200092 (China); Deng, L.; Hagley, E. W. [National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)

2014-10-20

We demonstrate a fast, all-optical polarization gate in a room-temperature atomic medium. Using a Polarization-Selective-Kerr-Phase-Shift (PSKPS) technique, we selectively write a π phase shift to one circularly-polarized component of a linearly-polarized input signal field. The output signal field maintains its original strength but acquires a 90° linear polarization rotation, demonstrating fast, high-fidelity, dynamically-controlled polarization gate operation. The intensity of the polarization-switching field used in this PKSPK-based polarization gate operation is only 2 mW/cm{sup 2}, which would be equivalent to 0.5 nW of light power (λ = 800 nm) confined in a typical commercial photonic hollow-core fiber. This development opens a realm of possibilities for potential future extremely low light level telecommunication and information processing systems.

Neutron polarization

International Nuclear Information System (INIS)

Firk, F.W.K.

1976-01-01

Some recent experiments involving polarized neutrons are discussed; they demonstrate how polarization studies provide information on fundamental aspects of nuclear structure that cannot be obtained from more traditional neutron studies. Until recently, neutron polarization studies tended to be limited either to very low energies or to restricted regions at higher energies, determined by the kinematics of favorable (p, vector n) and (d, vector n) reactions. With the advent of high intensity pulsed electron and proton accelerators and of beams of vector polarized deuterons, this is no longer the case. One has entered an era in which neutron polarization experiments are now being carried out, in a routine way, throughout the entire range from thermal energies to tens-of-MeV. The significance of neutron polarization studies is illustrated in discussions of a wide variety of experiments that include the measurement of T-invariance in the β-decay of polarized neutrons, a search for the effects of meson exchange currents in the photo-disintegration of the deuteron, the determination of quantum numbers of states in the fission of aligned 235 U and 237 Np induced by polarized neutrons, and the double- and triple-scattering of fast neutrons by light nuclei

Fabrication and characterization of high quality n-ZnO/p-GaN heterojunction light emission diodes

International Nuclear Information System (INIS)

Zheng Hao; Mei, Z.X.; Zeng, Z.Q.; Liu, Y.Z.; Guo, L.W.; Jia, J.F.; Xue, Q.K.; Zhang, Z.; Du, X.L.

2011-01-01

High quality single crystalline n-type ZnO film was grown on p-type GaN substrate using molecular beam epitaxy. Transmission electron microscopy reveals a sharp ZnO/GaN interface. Light-emitting diode was fabricated from this heterostructure, and a turn-on voltage of ∼ 3.4 V was demonstrated. We found that the emission peak shifts from violet (430 nm) to near-ultraviolet (375 nm) when the driving current increases from 0.38 mA to 3.08 mA. This intriguing phenomenon can be understood by charged carrier's radical recombination occurring at both sides of the device, and the current enhancement of ZnO emission efficiency.

Polarized Source Performance and Developments at Jefferson Lab

International Nuclear Information System (INIS)

Matt Poelker; P. Adderley; J. Clark; A. Day; Joseph Grames; J. Hansknecht; P. Hartmann; R. Kazimi; P. Rutt; Charles Sinclair; M. Steigerwald

2000-01-01

The polarized photoinjector at Jefferson Lab continues to provide high average current, high polarization, high quality beam to nuclear physics Users in as many as three endstations simultaneously. Long lifetime operation has been obtained from two identical polarized guns. A new high power mode locked Ti-sapphire laser has been constructed to enhance the effective operating lifetime of the photoinjector. Efforts to enhance beam polarization and reduced helicity correlated beam systematic effects are underway

Avoiding polar catastrophe in the growth of polarly orientated nickel perovskite thin films by reactive oxide molecular beam epitaxy

International Nuclear Information System (INIS)

Yang, H. F.; Liu, Z. T.; Fan, C. C.; Xiang, P.; Zhang, K. L.; Li, M. Y.; Liu, J. S.; Yao, Q.; Shen, D. W.

2016-01-01

By means of the state-of-the-art reactive oxide molecular beam epitaxy, we synthesized (001)- and (111)-orientated polar LaNiO 3 thin films. In order to avoid the interfacial reconstructions induced by polar catastrophe, screening metallic Nb-doped SrTiO 3 and iso-polarity LaAlO 3 substrates were chosen to achieve high-quality (001)-orientated films in a layer-by-layer growth mode. For largely polar (111)-orientated films, we showed that iso-polarity LaAlO 3 (111) substrate was more suitable than Nb-doped SrTiO 3 . In situ reflection high-energy electron diffraction, ex situ high-resolution X-ray diffraction, and atomic force microscopy were used to characterize these films. Our results show that special attentions need to be paid to grow high-quality oxide films with polar orientations, which can prompt the explorations of all-oxide electronics and artificial interfacial engineering to pursue intriguing emergent physics like proposed interfacial superconductivity and topological phases in LaNiO 3 based superlattices.

Field-induced spin splitting and anomalous photoluminescence circular polarization in C H3N H3Pb I3 films at high magnetic field

Science.gov (United States)

Zhang, Chuang; Sun, Dali; Yu, Zhi-Gang; Sheng, Chuan-Xiang; McGill, Stephen; Semenov, Dmitry; Vardeny, Zeev Valy

2018-04-01

The organic-inorganic hybrid perovskites show excellent optical and electrical properties for photovoltaic and a myriad of other optoelectronics applications. Using high-field magneto-optical measurements up to 17.5 T at cryogenic temperatures, we have studied the spin-dependent optical transitions in the prototype C H3N H3Pb I3 , which are manifested in the field-induced circularly polarized photoluminescence emission. The energy splitting between left and right circularly polarized emission bands is measured to be ˜1.5 meV at 17.5 T, from which we obtained an exciton effective g factor of ˜1.32. Also from the photoluminescence diamagnetic shift we estimate the exciton binding energy to be ˜17 meV at low temperature. Surprisingly, the corresponding field-induced circular polarization is "anomalous" in that the photoluminescence emission of the higher split energy band is stronger than that of the lower split band. This "reversed" intensity ratio originates from the combination of long electron spin relaxation time and hole negative g factor in C H3N H3Pb I3 , which are in agreement with a model based on the k.p effective-mass approximation.

In Vitro Polarized Resonance Raman Study of N719 and N719-TBP in Dye Sensitized Solar Cells

DEFF Research Database (Denmark)

Hassing, Søren; Jernshøj, Kit Drescher; Nguyen, Phuong Tuyet

2016-01-01

Abstract: The working efficiency of dye-sensitized solar cells (DSCs) depends on the long-term stability of the dye itself and on the microscopic structure of the dye-semiconductor interface. Previous experimental studies of DSCs based on ruthenium dye with bipyridine ligands (N719) adsorbed...... to the TiO2substrate applied FTIR,un-polarized Raman (RS) and un-polarized resonance Raman (RRS) spectroscopy. In the un-polarized RRS studies of N719/TiO2 – DSCs the discussion of the adsorption of N719 was based on the rather weak carbonyl or carboxyl group stretching vibrations and on minor spectral...

Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

KAUST Repository

Young, N.G.

2016-10-01

We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.

Germanium doping of GaN by metalorganic chemical vapor deposition for polarization screening applications

KAUST Repository

Young, N.G.; Farrell, R.M.; Iza, M.; Nakamura, S.; DenBaars, S.P.; Weisbuch, C.; Speck, J.S.

2016-01-01

We demonstrate n-type doping of GaN with Ge by MOCVD at high concentrations that are necessary to fully screen the polarization fields in c-plane InGaN/GaN quantum wells. Hall measurements show linear Ge incorporation with dopant flow rate and carrier concentrations exceeding 1×10 cm. GaN:Ge layers exhibit excellent electron mobility, high conductivity, and contact resistivity comparable to the best unannealed contacts to Si-doped GaN. However, the surface morphology begins to degrade with Ge concentrations above 1×10 cm, resulting in severe step bunching and a network of plateaus and trenches, even in layers as thin as 10 nm.

Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers

Science.gov (United States)

Netzel, C.; Knauer, A.; Weyers, M.

2012-12-01

We analyzed emission intensity, quantum efficiency, and emitted light polarization of c-plane AlGaN and AlInGaN layers (λ = 320-350 nm) by temperature dependent photoluminescence. Low indium content in AlInGaN structures causes a significant intensity increase by change of the polarization of the emitted light. Polarization changes from E ⊥ c to E ‖ c with increasing aluminum content. It switches back to E ⊥ c with the incorporation of indium. The polarization degree decreases with temperature. This temperature dependence can corrupt internal quantum efficiency determination by temperature dependent photoluminescence.

Adapting the HSV polarization-color mapping for regions with low irradiance and high polarization.

Science.gov (United States)

Scott Tyo, J; Ratliff, Bradley M; Alenin, Andrey S

2016-10-15

Many mappings from polarization into color have been developed so that polarization information can be displayed. One of the most common of these maps the angle of linear polarization into color hue and degree of linear polarization into color saturation, while preserving the irradiance information from the polarization data. While this strategy enjoys wide popularity, there is a large class of polarization images for which it is not ideal. It is common to have images where the strongest polarization signatures (in terms of degree of polarization) occur in regions of relatively low irradiance: either in shadow in reflective bands or in cold regions in emissive bands. Since the irradiance is low, the chromatic properties of the resulting images are generally not apparent. Here we present an alternate mapping that uses the statistics of the angle of polarization as a measure of confidence in the polarization signature, then amplifies the irradiance in regions of high confidence, and leaves it unchanged in regions of low confidence. Results are shown from an LWIR and a visible spectrum imager.

Demonstration of forward inter-band tunneling in GaN by polarization engineering

International Nuclear Information System (INIS)

Krishnamoorthy, Sriram; Park, Pil Sung; Rajan, Siddharth

2011-01-01

We report on the design, fabrication, and characterization of GaN interband tunnel junction showing forward tunneling characteristics. We have achieved very high forward tunneling currents (153 mA/cm 2 at 10 mV, and 17.7 A/cm 2 peak current) in polarization-engineered GaN/InGaN/GaN heterojunction diodes grown by plasma assisted molecular beam epitaxy. We also report the observation of repeatable negative differential resistance in interband III-Nitride tunnel junctions, with peak-valley current ratio of 4 at room temperature. The forward current density achieved in this work meets the typical current drive requirements of a multi-junction solar cell.

A Monte Carlo Study of Lambda Hyperon Polarization at BM@N

Science.gov (United States)

Suvarieva, D.; Gudima, K.; Zinchenko, A.

2018-03-01

Heavy strange objects (hyperons) can provide essential signatures of the excited and compressed baryonic matter. At NICA, it is planned to study hyperons both in the collider mode (MPD detector) and the fixed-target one (BM@N setup). Measurements of strange hyperon polarization can give additional information on the strong interaction mechanisms. In heavy-ion collisions, such measurements are even more valuable since the polarization is expected to be sensitive to characteristics of the QCD medium (vorticity, hydrodynamic helicity) and to QCD anomalous transport. In this analysis, the possibility to measure at BM@N the polarization of the lightest strange hyperon Λ is studied in Monte Carlo event samples of Au + Au collisions produced with the DCM-QGSM generator. It is shown that the detector will allow to measure polarization with a precision required to check the model predictions.

Polarized beams in high energy storage rings

Energy Technology Data Exchange (ETDEWEB)

Montague, B W [European Organization for Nuclear Research, Geneva (Switzerland)

1984-11-01

In recent years there has been a considerable advance in understanding the spin motion of particles in storage rings and accelerators. The survey presented here outlines the early historical development in this field, describes the basic ideas governing the kinetics of polarized particles in electromagnetic fields and shows how these have evolved into the current description of polarized beam behaviour. Orbital motion of particles influences their spin precession, and depolarization of a beam can result from excitation of spin resonances by orbit errors and oscillations. Electrons and positrons are additionally influenced by the quantized character of synchrotron radiation, which not only provides a polarizing mechanism but also enhances depolarizing effects. Progress in the theoretical formulation of these phenomena has clarified the details of the physical processes and suggested improved methods of compensating spin resonances. Full use of polarized beams for high-energy physics with storage rings requires spin rotators to produce longitudinal polarization in the interaction regions. Variants of these schemes, dubbed Siberian snakes, provide a curious precession topology which can substantially reduce depolarization in the high-energy range. Efficient polarimetry is an essential requirement for implementing polarized beams, whose utility for physics can be enhanced by various methods of spin manipulation.

Small-angle neutron polarization for the 2H(d vector,n vector)3He reaction near Esub(d) = 8MeV

International Nuclear Information System (INIS)

Tornow, W.; Woye, W.; Mack, G.

1981-01-01

Considerable improvement in the quality of analyzing power experiments performed with polarized fast neutrons has been achieved during the last few years by using neutrons from the polarization transfer reaction 2 H(d vector,n vector) 3 He at a reaction angle of theta = 0 0 . To compromise in these experiments between intensity problems and finite geometry corrections, it is desirable in some instances to subtend a full-width angle Δtheta of 20 0 (lab) centered about theta = 0 0 . In order to investigate the suitability of this reaction as a source of polarized neutrons for cases where the scatterer is close to the neutron source, the neutron polarization of the reaction 2 H(d vector,n vector) 3 He has been studied with Δtheta of about 3 0 in 3 0 steps out to theta = 20 0 (lab). An incident deuteron energy near 8 MeV was chosen to yield outgoing neutrons at 11.0 MeV, a typical energy for neutron analyzing power experiments. It is found that the effective neutron polarization, a combination of the two polarizations measured when the direction of the deuteron polarization is inverted or flipped at the polarized ion source, is large and nearly constant for angles between theta = 0 0 and theta = 10 0 (lab). (orig.)

EDITORIAL: Non-polar and semipolar nitride semiconductors Non-polar and semipolar nitride semiconductors

Science.gov (United States)

Han, Jung; Kneissl, Michael

2012-02-01

Throughout the history of group-III-nitride materials and devices, scientific breakthroughs and technological advances have gone hand-in-hand. In the late 1980s and early 1990s, the discovery of the nucleation of smooth (0001) GaN films on c-plane sapphire and the activation of p-dopants in GaN led very quickly to the realization of high-brightness blue and green LEDs, followed by the first demonstration of GaN-based violet laser diodes in the mid 1990s. Today, blue InGaN LEDs boast record external quantum efficiencies exceeding 80% and the emission wavelength of the InGaN-based laser diode has been pushed into the green spectral range. Although these tremenduous advances have already spurred multi-billion dollar industries, there are still a number of scientific questions and technological issues that are unanswered. One key challenge is related to the polar nature of the III-nitride wurtzite crystal. Until a decade ago all research activities had almost exclusively concentrated on (0001)-oriented polar GaN layers and heterostructures. Although the device characteristics seem excellent, the strong polarization fields at GaN heterointerfaces can lead to a significant deterioration of the device performance. Triggered by the first demonstration non-polar GaN quantum wells grown on LiAlO2 by Waltereit and colleagues in 2000, impressive advances in the area of non-polar and semipolar nitride semiconductors and devices have been achieved. Today, a large variety of heterostructures free of polarization fields and exhibiting exceptional electronic and optical properties have been demonstrated, and the fundamental understanding of polar, semipolar and non-polar nitrides has made significant leaps forward. The contributions in this Semiconductor Science and Technology special issue on non-polar and semipolar nitride semiconductors provide an impressive and up-to-date cross-section of all areas of research and device physics in this field. The articles cover a wide range of

Determination of octanol-water partition coefficients of polar polycyclic aromatic compounds (N-PAC) by high performance liquid chromatography

DEFF Research Database (Denmark)

Helweg, C.; Nielsen, T.; Hansen, P.E.

1997-01-01

Prediction of 1-octanol water partition coefficients for a range of polar N-PAC from HPLC capacity coefficients has been investigated. Two commercially available columns, an ODS column and a Diol column were tested with water-methanol eluents. The best prediction of log K-ow for N-PAC was achieve...... with size and log K-ow for N-PAC was 1.1-1.3 lower than log K-ow for the equivalent PAH. Shielding of the nitrogen atom in the N-PAC compounds caused an increase in log K-ow. (C) 1997 Elsevier Science Ltd....

Polarized infrared reflectance study of free standing cubic GaN grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Lee, S.C.; Ng, S.S.; Hassan, H. Abu; Hassan, Z.; Zainal, N.; Novikov, S.V.; Foxon, C.T.; Kent, A.J.

2014-01-01

Optical properties of free standing cubic gallium nitride grown by molecular beam epitaxy system are investigated by a polarized infrared (IR) reflectance technique. A strong reststrahlen band, which reveals the bulk-like optical phonon frequencies, is observed. Meanwhile, continuous oscillation fringes, which indicate the sample consists of two homogeneous layers with different dielectric constants, are observed in the non-reststrahlen region. By obtaining the first derivative of polarized IR reflectance spectra measured at higher angles of incidence, extra phonon resonances are identified at the edges of the reststrahlen band. The observations are verified with the theoretical results simulated based on a multi-oscillator model. - Highlights: • First time experimental studies of IR optical phonons in bulk like, cubic GaN layer. • Detection of extra phonon modes of cubic GaN by polarized IR reflectance technique. • Revelation of IR multiphonon modes of cubic GaN by first derivative numerical method. • Observation of multiphonon modes requires very high angle of incidence. • Resonance splitting effect induced by third phonon mode is a qualitative indicator

Effect of III-nitride polarization on V{sub OC} in p-i-n and MQW solar cells

Energy Technology Data Exchange (ETDEWEB)

Namkoong, Gon; Boland, Patrick; Foe, Kurniawan; Latimer, Kevin [Department of Electrical and Computer Engineering, Old Dominion University, Applied Research Center, 12050 Jefferson Avenue, Newport News, VA 23606 (United States); Bae, Si-Young; Shim, Jae-Phil; Lee, Dong-Seon [School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju 500-712 (Korea, Republic of); Jeon, Seong-Ran [Korea Photonics Technology Institute, 971-35, Wolchul-dong, Buk-gu, Gwangju, 500-779 (Korea, Republic of); Doolittle, W. Alan [School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 (United States)

2011-02-15

We performed detailed studies of the effect of polarization on III-nitride solar cells. Spontaneous and piezoelectric polarizations were assessed to determine their impacts upon the open circuit voltages (V{sub OC}) in p-i(InGaN)-n and multi-quantum well (MQW) solar cells. We found that the spontaneous polarization in Ga-polar p-i-n solar cells strongly modifies energy band structures and corresponding electric fields in a way that degrades V{sub OC} compared to non-polar p-i-n structures. In contrast, we found that piezoelectric polarization in Ga-polar MQW structures does not have a large influence on V{sub OC} compared to non-polar MQW structures. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-resolution two-dimensional and three-dimensional modeling of wire grid polarizers and micropolarizer arrays

Science.gov (United States)

Vorobiev, Dmitry; Ninkov, Zoran

2017-11-01

Recent advances in photolithography allowed the fabrication of high-quality wire grid polarizers for the visible and near-infrared regimes. In turn, micropolarizer arrays (MPAs) based on wire grid polarizers have been developed and used to construct compact, versatile imaging polarimeters. However, the contrast and throughput of these polarimeters are significantly worse than one might expect based on the performance of large area wire grid polarizers or MPAs, alone. We investigate the parameters that affect the performance of wire grid polarizers and MPAs, using high-resolution two-dimensional and three-dimensional (3-D) finite-difference time-domain simulations. We pay special attention to numerical errors and other challenges that arise in models of these and other subwavelength optical devices. Our tests show that simulations of these structures in the visible and near-IR begin to converge numerically when the mesh size is smaller than ˜4 nm. The performance of wire grid polarizers is very sensitive to the shape, spacing, and conductivity of the metal wires. Using 3-D simulations of micropolarizer "superpixels," we directly study the cross talk due to diffraction at the edges of each micropolarizer, which decreases the contrast of MPAs to ˜200∶1.

High-efficiency transmision neutron polarizer for high-resolution double crystal diffractometer

International Nuclear Information System (INIS)

Ioffe, A.; Krist, T.; Mezei, F.; Gordeev, G.; Ibrayev, B.

1997-01-01

An efficient transmission geometry neutron polarizer for the high-resolution double crystal diffractometer at HMI (λ=4.8 A) is described. A polarization of about 94% was achieved and the polarized neutron beam intensity amounts to 40% of the nonpolarized beam intensity. This opens up wide possibilities for the study of magnetic small-angle scattering for extremely small momentum transfer (Q∝10 -5 A -1 ). (orig.)

Determinación de compuestos polares por TLC-FID en aceites refinado y semi-hidrogenado de soja sometidos a calentamiento prolongado

Directory of Open Access Journals (Sweden)

Cruzian, J. L.

1997-06-01

Full Text Available The thermal degradation of oils and fats leads to the formation of polar compounds, which is the reason why their determination is adopted for the quality control of the oil and fat used in frying. Samples of refined and partially hydrogenated soybean oil were heated for 30 and 60 hours respectively and the polar compounds content were determined using the lUPAC-AOAC official method and TLC-FID. The samples of oil and the fractions separated on the column were applied to the chromarods and developed in petroleum ether: diethyl ether (93:7 v/v. The determination of polar compounds by lUPAC method and by TLC-FID presented similar results (P-value<< 0,001, although when the content was greater than 16% the second method gave higher values. The results showed that the state of degradation of oils and fats as measured for the quantity of polar compounds can be determined alternatively by TLC-FID, presenting a significant reduction in time, hand work and solvent volume.

La degradación térmica de aceites y grasas lleva a la formación de compuestos polares, motivo por el cual su determinación es usada como control de calidad de aceites y grasas utilizadas en fritura. Muestras de aceite de soja refinado y semi-hidrogenado fueron calentadas durante 30 y 60 horas respectivamente y el contenido de compuestos polares fue determinado utilizando el método oficial lUPAC-AOAC y TLCFID. Las muestras de aceite y las fracciones separadas en la columna fueron aplicadas en los «chromarods» y desarrolladas en éter de petróleo: éter etílico (93:7 v/v. La determinación de compuestos polares por el método lUPAC y por TLC-FID, dieron resultados similares (P-value<< 0,001, aunque los obtenidos por el segundo método fueron superiores, cuando los compuestos polares superan el 16%. Los resultados obtenidos indican que el estado de descomposición de aceites y grasas medido por la cantidad de compuestos polares puede ser determinado alternativamente por

Piezotronic effect tuned AlGaN/GaN high electron mobility transistor

Science.gov (United States)

Jiang, Chunyan; Liu, Ting; Du, Chunhua; Huang, Xin; Liu, Mengmeng; Zhao, Zhenfu; Li, Linxuan; Pu, Xiong; Zhai, Junyi; Hu, Weiguo; Wang, Zhong Lin

2017-11-01

The piezotronic effect utilizes strain-induced piezoelectric polarization charges to tune the carrier transportation across the interface/junction. We fabricated a high-performance AlGaN/GaN high electron mobility transistor (HEMT), and the transport property was proven to be enhanced by applying an external stress for the first time. The enhanced source-drain current was also observed at any gate voltage and the maximum enhancement of the saturation current was up to 21% with 15 N applied stress (0.18 GPa at center) at -1 V gate voltage. The physical mechanism of HEMT with/without external compressive stress conditions was carefully illustrated and further confirmed by a self-consistent solution of the Schrödinger-Poisson equations. This study proves the cause-and-effect relationship between the piezoelectric polarization effect and 2D electron gas formation, which provides a tunable solution to enhance the device performance. The strain tuned HEMT has potential applications in human-machine interface and the security control of the power system.

Polarization-dependent photoluminescence studies of semipolar and nonpolar InGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Schade, Lukas; Schwarz, Ulrich [IAF, Freiburg (Germany); Wernicke, Tim; Weyers, Markus [FBH, Berlin (Germany); Kneissl, Michael [FBH, Berlin (Germany); Institute of Solid State Physics, TU Berlin (Germany)

2010-07-01

Light emitted from optical devices based on semi- and nonpolar GaN quantum well (QW) structures is partially or totally polarized, as a consequence of crystal symmetry and band structure. This can be an additional advantage over polar (0001)GaN in specific applications, e.g. in LED backlighting. Fundamentally, the polarized emission stems from breaking the isotropic symmetry of the hexagonal c-plane, resulting in two discrete semi- and nonpolar directions (parallel and normal to the projection of (0001)). We use the k.p method to simulate the crystal-direction dependent emission. The resulting transition matrix elements assign a specific (partial) polarization for each subband. The thermal occupation of the subbands results in a temperature dependent effective polarization of the light emission. We study MOVPE grown homoepitactical polar, semi- and nonpolar samples, measuring the polarization properties of the resonantly excited photoluminescence from the QW. With the complete polarization of the subbands for nonpolar devices it is possible to measure the energetic difference of the first two valence band levels. In contrast to our calculations we find a higher degree of polarization also in semipolar directions. A possible explanation could be a higher energetic subband difference than computed.

Formation of definite GaN p-n junction by Mg-ion implantation to n--GaN epitaxial layers grown on a high-quality free-standing GaN substrate

Science.gov (United States)

Oikawa, Takuya; Saijo, Yusuke; Kato, Shigeki; Mishima, Tomoyoshi; Nakamura, Tohru

2015-12-01

P-type conversion of n--GaN by Mg-ion implantation was successfully performed using high quality GaN epitaxial layers grown on free-standing low-dislocation-density GaN substrates. These samples showed low-temperature PL spectra quite similar to those observed from Mg-doped MOVPE-grown p-type GaN, consisting of Mg related donor-acceptor pair (DAP) and acceptor bound exciton (ABE) emission. P-n diodes fabricated by the Mg-ion implantation showed clear rectifying I-V characteristics and UV and blue light emissions were observed at forward biased conditions for the first time.

Optical polarization of high-energy BL Lacertae objects

Science.gov (United States)

Hovatta, T.; Lindfors, E.; Blinov, D.; Pavlidou, V.; Nilsson, K.; Kiehlmann, S.; Angelakis, E.; Fallah Ramazani, V.; Liodakis, I.; Myserlis, I.; Panopoulou, G. V.; Pursimo, T.

2016-12-01

Context. We investigate the optical polarization properties of high-energy BL Lac objects using data from the RoboPol blazar monitoring program and the Nordic Optical Telescope. Aims: We wish to understand if there are differences between the BL Lac objects that have been detected with the current-generation TeV instruments and those objects that have not yet been detected. Methods: We used a maximum-likelihood method to investigate the optical polarization fraction and its variability in these sources. In order to study the polarization position angle variability, we calculated the time derivative of the electric vector position angle (EVPA) change. We also studied the spread in the Stokes Q/I-U/I plane and rotations in the polarization plane. Results: The mean polarization fraction of the TeV-detected BL Lacs is 5%, while the non-TeV sources show a higher mean polarization fraction of 7%. This difference in polarization fraction disappears when the dilution by the unpolarized light of the host galaxy is accounted for. The TeV sources show somewhat lower fractional polarization variability amplitudes than the non-TeV sources. Also the fraction of sources with a smaller spread in the Q/I-U/I plane and a clumped distribution of points away from the origin, possibly indicating a preferred polarization angle, is larger in the TeV than in the non-TeV sources. These differences between TeV and non-TeV samples seem to arise from differences between intermediate and high spectral peaking sources instead of the TeV detection. When the EVPA variations are studied, the rate of EVPA change is similar in both samples. We detect significant EVPA rotations in both TeV and non-TeV sources, showing that rotations can occur in high spectral peaking BL Lac objects when the monitoring cadence is dense enough. Our simulations show that we cannot exclude a random walk origin for these rotations. Conclusions: These results indicate that there are no intrinsic differences in the

Growth of GaN-based non- and semipolar heterostructures for high efficiency light emitters

International Nuclear Information System (INIS)

Wernicke, Tim

2010-01-01

Optoelectronic devices based on GaN and its alloys InGaN and AlGaN are capable of emitting light from the visible to the ultraviolet spectral region. Blue and green lasers have applications in laser projectors, DNA sequencing and spectroscopy. But it is extremely difficult to fabricate green laser diodes. Currently almost all of the light emitting diodes (LEDs) and lasers are grown on GaN crystals that are oriented in the polar (0001) c-plane direction, which provides the most stable growth surface. However the resulting polarization fields on (0001)GaN have detrimental effects on the optical properties of nitride light emitters, e.g. causing significant wavelength shifts and reduced efficiencies in InGaN LEDs. Growth on crystal surfaces with non- and semipolar orientations, e.g. (10 anti 10) m-plane or (11 anti 22), could enable devices with new and improved optical properties. For example, for nonpolar and semipolar LEDs the degree of polarization of the emitted light can be tailored. Furthermore easier to grow devices with green light emission, since the indium incorporation is enhanced for semipolar orientations. In contrast to c-plane GaN there is no polarization field across quantum wells on nonpolar GaN. By reducing the polarization fields an increase in the radiative recombination rate can be expected and would lead to higher LED efficiencies and lower laser thresholds. One of the biggest challenges for the growth of light emitters on non- and semipolar GaN is the choice of a suitable substrate: Heteroepitaxial growth on sapphire or LiAlO 2 allows the deposition of GaN on 2'' diameter wafers and larger. However, these layers show a very high defect density in particular basal plane stacking faults, in comparison to c-plane GaN on sapphire. In order to reduce the defect density we applied successfully epitaxial lateral overgrowth to heteroepitaxial nonpolar a-plane GaN and verified the improvement by spatially and spectrally cathodoluminescence imaging as

Control de calidad de las grasas de fritura. Validez de los métodos de ensayos rápidos en sustitución de la determinación de compuestos polares

Directory of Open Access Journals (Sweden)

Dobarganes, M. C.

1995-06-01

Full Text Available In this paper, substitution of polar compound quantitation by quick tests for discarding used frying fats according to official regulation, is evaluated.
Two commercialized tests (VERI-FRY and OXIFRIT as well as two laboratory tests (PEREVALOV and Solubility in acetone:methanol 90:10 have been applied. Comparison of the results with those obtained for polar compounds indicated that OXIFRIT was the best quick tests as it gave the minimum percentage of enors. Given the present situation, the application of any of the two commercialized tests would contribute to improve frying fat quality.

Se estudia la validez de métodos de ensayo rápido para sustituir la determinación de compuestos polares establecida en la Norma de Calidad de aceites y grasas calentados.
Dos pruebas comercializadas (VERI-FRY y OXIFRIT y dos pruebas rápidas de laboratorio (PEREVALOV y Solubilidad en Acetona-Metanol 90:10 fueron aplicadas a un elevado número de muestras. Comparando los resultados obtenidos, con el contenido en compuestos polares, el ensayo denominado OXIFRIT dio el menor número de errores aunque la aplicación de cualquiera de las dos pruebas comercializadas contribuiría a mejorar la calidad de las grasas de fritura.

Polarization of lanthanum nucleus by dynamic polarization method

International Nuclear Information System (INIS)

Adachi, Toshikazu; Ishimoto, Shigeru; Masuda, Yasuhiro; Morimoto, Kimio

1989-01-01

Preliminary studies have been carried out concerning the application of a dynamic polarization method to polarizing lanthanum fluoride single crystal to be employed as target in experiments with time reversal invariance. The present report briefly outlines the dynamic polarization method and describes some preliminary studies carried out so far. Dynamic polarization is of particular importance because no techniques are currently available that can produce highly polarized static nucleus. Spin interaction between electrons and protons (nuclei) plays a major role in the dynamic polarization method. In a thermal equilibrium state, electrons are polarized almost completely while most protons are not polarized. Positively polarized proton spin is produced by applying microwave to this system. The most hopeful candidate target material is single crystal of LaF 3 containing neodymium because the crystal is chemically stable and easy to handle. The spin direction is of great importance in experiments with time reversal invariance. The spin of neutrons in the target can be cancelled by adjusting the external magnetic field applied to a frozen polarized target. In a frozen spin state, the polarity decreases slowly with a relaxation time that depends on the external magnetic field and temperature. (N.K.)

A High-Resolution Continuous Flow Analysis System for Polar Ice Cores

DEFF Research Database (Denmark)

Dallmayr, Remi; Goto-Azuma, Kumiko; Kjær, Helle Astrid

2016-01-01

of Polar Research (NIPR) in Tokyo. The system allows the continuous analysis of stable water isotopes and electrical conductivity, as well as the collection of discrete samples from both inner and outer parts of the core. This CFA system was designed to have sufficiently high temporal resolution to detect...... signals of abrupt climate change in deep polar ice cores. To test its performance, we used the system to analyze different climate intervals in ice drilled at the NEEM (North Greenland Eemian Ice Drilling) site, Greenland. The quality of our continuous measurement of stable water isotopes has been......In recent decades, the development of continuous flow analysis (CFA) technology for ice core analysis has enabled greater sample throughput and greater depth resolution compared with the classic discrete sampling technique. We developed the first Japanese CFA system at the National Institute...

Fabrication of high quality GaN nanopillar arrays by dry and wet chemical etching

OpenAIRE

Paramanik, Dipak; Motayed, Abhishek; King, Matthew; Ha, Jong-Yoon; Kryluk, Sergi; Davydov, Albert V.; Talin, Alec

2013-01-01

We study strain relaxation and surface damage of GaN nanopillar arrays fabricated using inductively coupled plasma (ICP) etching and post etch wet chemical treatment. We controlled the shape and surface damage of such nanopillar structures through selection of etching parameters. We compared different substrate temperatures and different chlorine-based etch chemistries to fabricate high quality GaN nanopillars. Room temperature photoluminescence and Raman scattering measurements were carried ...

Linearly polarized photoluminescence of anisotropically strained c-plane GaN layers on stripe-shaped cavity-engineered sapphire substrate

Science.gov (United States)

Kim, Jongmyeong; Moon, Daeyoung; Lee, Seungmin; Lee, Donghyun; Yang, Duyoung; Jang, Jeonghwan; Park, Yongjo; Yoon, Euijoon

2018-05-01

Anisotropic in-plane strain and resultant linearly polarized photoluminescence (PL) of c-plane GaN layers were realized by using a stripe-shaped cavity-engineered sapphire substrate (SCES). High resolution X-ray reciprocal space mapping measurements revealed that the GaN layers on the SCES were under significant anisotropic in-plane strain of -0.0140% and -0.1351% along the directions perpendicular and parallel to the stripe pattern, respectively. The anisotropic in-plane strain in the GaN layers was attributed to the anisotropic strain relaxation due to the anisotropic arrangement of cavity-incorporated membranes. Linearly polarized PL behavior such as the observed angle-dependent shift in PL peak position and intensity comparable with the calculated value based on k.p perturbation theory. It was found that the polarized PL behavior was attributed to the modification of valence band structures induced by anisotropic in-plane strain in the GaN layers on the SCES.

Ultra-high performance size-exclusion chromatography in polar solvents.

Science.gov (United States)

Vancoillie, Gertjan; Vergaelen, Maarten; Hoogenboom, Richard

2016-12-23

Size-exclusion chromatography (SEC) is amongst the most widely used polymer characterization methods in both academic and industrial polymer research allowing the determination of molecular weight and distribution parameters, i.e. the dispersity (Ɖ), of unknown polymers. The many advantages, including accuracy, reproducibility and low sample consumption, have contributed to the worldwide success of this analytical technique. The current generation of SEC systems have a stationary phase mostly containing highly porous, styrene-divinylbenzene particles allowing for a size-based separation of various polymers in solution but limiting the flow rate and solvent compatibility. Recently, sub-2μm ethylene-bridged hybrid (BEH) packing materials have become available for SEC analysis. These packing materials can not only withstand much higher pressures up to 15000psi but also show high spatial stability towards different solvents. Combining these BEH columns with the ultra-high performance LC (UHPLC) technology opens up UHP-SEC analysis, showing strongly reduced runtimes and unprecedented solvent compatibility. In this work, this novel characterization technique was compared to conventional SEC using both highly viscous and highly polar solvents as eluent, namely N,N-dimethylacetamide (DMAc), N,N-dimethylformamide (DMF) and methanol, focusing on the suitability of the BEH-columns for analysis of highly functional polymers. The results show a high functional group compatibility comparable with conventional SEC with remarkably short runtimes and enhanced resolution in methanol. Copyright © 2016 Elsevier B.V. All rights reserved.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

Science.gov (United States)

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Investigation on Surface Polarization of Al2O3-capped GaN/AlGaN/GaN Heterostructure by Angle-Resolved X-ray Photoelectron Spectroscopy.

Science.gov (United States)

Duan, Tian Li; Pan, Ji Sheng; Wang, Ning; Cheng, Kai; Yu, Hong Yu

2017-08-17

The surface polarization of Ga-face gallium nitride (GaN) (2 nm)/AlGaN (22 nm)/GaN channel (150 nm)/buffer/Si with Al 2 O 3 capping layer is investigated by angle-resolved X-ray photoelectron spectroscopy (ARXPS). It is found that the energy band varies from upward bending to downward bending in the interface region, which is believed to be corresponding to the polarization variation. An interfacial layer is formed between top GaN and Al 2 O 3 due to the occurrence of Ga-N bond break and Ga-O bond forming during Al 2 O 3 deposition via the atomic layer deposition (ALD). This interfacial layer is believed to eliminate the GaN polarization, thus reducing the polarization-induced negative charges. Furthermore, this interfacial layer plays a key role for the introduction of the positive charges which lead the energy band downward. Finally, a N 2 annealing at 400 °C is observed to enhance the interfacial layer growth thus increasing the density of positive charges.

A two-dimensional fully analytical model with polarization effect for off-state channel potential and electric field distributions of GaN-based field-plated high electron mobility transistor

International Nuclear Information System (INIS)

Mao Wei; She Wei-Bo; Zhang Chao; Zhang Jin-Cheng; Zhang Jin-Feng; Liu Hong-Xia; Yang Lin-An; Zhang Kai; Zhao Sheng-Lei; Chen Yong-He; Zheng Xue-Feng; Hao Yue; Yang Cui; Ma Xiao-Hua

2014-01-01

In this paper, we present a two-dimensional (2D) fully analytical model with consideration of polarization effect for the channel potential and electric field distributions of the gate field-plated high electron mobility transistor (FP-HEMT) on the basis of 2D Poisson's solution. The dependences of the channel potential and electric field distributions on drain bias, polarization charge density, FP structure parameters, AlGaN/GaN material parameters, etc. are investigated. A simple and convenient approach to designing high breakdown voltage FP-HEMTs is also proposed. The validity of this model is demonstrated by comparison with the numerical simulations with Silvaco—Atlas. The method in this paper can be extended to the development of other analytical models for different device structures, such as MIS-HEMTs, multiple-FP HETMs, slant-FP HEMTs, etc. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Probing the positron moderation process using high-intensity, highly polarized slow-positron beams

Science.gov (United States)

Van House, J.; Zitzewitz, P. W.

1984-01-01

A highly polarized (P = 0.48 + or - 0.02) intense (500,000/sec) beam of 'slow' (Delta E = about 2 eV) positrons (e+) is generated, and it is shown that it is possible to achieve polarization as high as P = 0.69 + or - 0.04 with reduced intensity. The measured polarization of the slow e+ emitted by five different positron moderators showed no dependence on the moderator atomic number (Z). It is concluded that only source positrons with final kinetic energy below 17 keV contribute to the slow-e+ beam, in disagreement with recent yield functions derived from low-energy measurements. Measurements of polarization and yield with absorbers of different Z between the source and moderator show the effects of the energy and angular distributions of the source positrons on P. The depolarization of fast e+ transmitted through high-Z absorbers has been measured. Applications of polarized slow-e+ beams are discussed.

STANFORD: Highly polarized SLC electron beams

International Nuclear Information System (INIS)

Anon.

1993-01-01

Full text: Using specialized photocathodes made with 'strained' gallium arsenide, physicists at the Stanford Linear Accelerator Center (SLAC) have generated electron beams with polarizations in excess of 60 percent a year ahead of schedule. Together with recent luminosity increases, this breakthrough will have a major impact on the physics output of the Stanford Linear Collider (SLC). Beam polarization was almost tripled using photocathodes in which a gallium arsenide layer was grown epitaxially over a substrate of gallium arsenide phosphide. The mismatch between these two layers deforms the crystal structure and removes a degeneracy in the valence band structure, permitting selective optical pumping of one unique spin state. Whereas conventional gallium arsenide photocathodes are limited to 50 percent polarization because of this degeneracy (and realistic cathodes fall substantially below this theoretical limit), such strained crystal lattices have the potential to yield polarizations close to 100 percent. Polarization enhancement with strained lattices was first demonstrated in 1991 by a SLAC/Wisconsin/ Berkeley group (May 1991, page 6) with a 71 percent polarization in a laboratory experiment. More recently this group has achieved polarization in excess of 90 percent, reported last November at the Nagoya Spin Symposium. (In a complementary development, a Japanese KEK/ Nagoya/KEK obtains polarized beams using a 'superlattice' - May 1991, page 4.) The 1993 SLC run, the strained gallium arsenide photocathode technique's debut in an operating particle accelerator, has proved to be a resounding, unqualified success - as have physics experiments on the Z particles produced by the highly polarized beam. A conservative approach was called for, due to concerns about possible charge saturation effects. A relatively thick (0.3 micron) gallium arsenide layer was used for the photocathode in the SLC polarized electron source. With a titanium

SLC polarized beam source ultra-high-vacuum design

International Nuclear Information System (INIS)

Lavine, T.L.; Clendenin, J.E.; Garwin, E.L.; Hoyt, E.W.; Hoyt, M.W.; Miller, R.H.; Nuttall, J.A.; Schultz, D.C.; Wright, D.

1991-05-01

This paper describes the design of the ultra-high vacuum system for the beam-line from the 160-kV polarized electron gun to the linac injector in the Stanford Linear Collider (SLC). The polarized electron source is a GaAs photocathode, requiring 10 -11 -Torr-range pressure for adequate quantum efficiency and longevity. The photo-cathode is illuminated by 3-nsec-long laser pulses. Photo-cathode maintenance and improvements require occasional substitution of guns with rapid restoration of UHV conditions. Differential pumping is crucial since the pressure in the injector is more than 10 times greater than the photocathode can tolerate, and since electron-stimulated gas desorption from beam loss in excess of 0.1% of the 20-nC pulses may poison the photocathode. Our design for the transport line contains a differential pumping region isolated by a pair of valves. Exchange of guns requires venting only this isolated region which can be restored to UHV rapidly by baking. The differential pumping is performed by non-evaporable getters (NEGs) and an ion pump. 3 refs., 3 figs

Improved crystal quality of a-plane GaN with high- temperature 3-dimensional GaN buffer layers deposited by using metal-organic chemical vapor deposition

International Nuclear Information System (INIS)

Park, Sung Hyun; Moon, Dae Young; Kim, Bum Ho; Kim, Dong Uk; Chang, Ho Jun; Jeon, Heon Su; Yoon, Eui Joon; Joo, Ki Su; You, Duck Jae; Nanishi, Yasushi

2012-01-01

a-plane GaN on r-plane sapphire substrates suffers from high density defects and rough surfaces. To obtain pit-free a-plane GaN by metal-organic chemical vapor deposition, we intentionally grew high-temperature (HT) 3-dimensional (3D) GaN buffer layers on a GaN nucleation layer. The effects of the HT 3D GaN buffer layers on crystal quality and the surface morphology of a-plane GaN were studied. The insertion of a 3D GaN buffer layer with an optimum thickness was found to be an effective method to obtain pit-free a-plane GaN with improved crystalline quality on r-plane sapphire substrates. An a-plane GaN light emitting diode (LED) at an emission wavelength around 480 nm with negligible peak shift was successfully fabricated.

Nonlinear Magnetic Phenomena in Highly Polarized Target Materials

CERN Document Server

Kiselev, Yu F

2007-01-01

The report introduces and surveys nonlinear magnetic phenomena which have been observed at high nuclear polarizations in polarized targets of the SMC and of the COMPASS collaborations at CERN. Some of these phenomena, namely the frequency modulation eect and the distortion of the NMR line shape, promote the development of the polarized target technique. Others, as the spin-spin cross-relaxation between spin subsystems can be used for the development of quantum statistical physics. New findings bear on an electromagnetic noise and the spectrally resolved radiation from LiD with negatively polarized nuclei detected by low temperature bolometers. These nonlinear phenomena need to be taken into account for achieving the ultimate polarizations.

The SLAC high-density gaseous polarized 3He target

International Nuclear Information System (INIS)

Johnson, J.R.; Chupp, T.E.; Smith, T.B.; Cates, G.D.; Driehuys, B.; Middleton, H.; Newbury, N.R.; Hughes, E.W.; Meyer, W.

1995-01-01

A large-scale high-pressure gaseous 3 He polarized target has been developed for use with a high-intensity polarized electron beam at the Stanford Linear Accelerator Center. This target was used successfully in an experiment to study the spin structure of the neutron. The target provided an areal density of about 7x10 21 nuclei/cm 2 and operated at 3 He polarizations between about 30% and 40% for the six-week duration of the experiment. ((orig.))

Review of polarized ammonium target

International Nuclear Information System (INIS)

Matsuda, Tatsuo

1987-01-01

Recently, ammonia (NH 3 ) and deutron ammonia (ND 3 ), instead of conventional alcohol substances, have been used more frequently as a polarized target substance for experiments of polarization at high energy regions. This article reviews major features of the polarized (deutron) ammonia targets. The dynamic nuclear polarization (DNT) method is widely used in high energy polarization experiments. While only a low polarization degree of hydrogen nucleus of 1.7 percent can be obtained by the Brute force method, DNP can produce polarization as high as ∼ 90 percent (2.5 T, ∼ 200 mK). In 1979, ammonia was irradiated with radiations to form NH 2 free radicals, resulting in the achievement of a high polarization degree of greater than 90 percent (hydrogen). Since then, ammonia and deutron ammonia have increasingly been replacing alcohols including butanol. Irradiation of a target substance with radiations destroys the structure of the substance, leading to a decrease in polarization degree. However, ammonia produces unpaired electrons as a result of irradiation, allowing it to be highly resistant to radiation. This report also present some study results, including observations on effects of radiation on the polarization degree of a target, effects of annealing, and polarization of 14 N. A process for producing an ammonia target is also described. (Nogami, K.)

Small-angle neutron polarization for the /sup 2/H(d vector,n vector)/sup 3/He reaction near Esub(d) = 8MeV

Energy Technology Data Exchange (ETDEWEB)

Tornow, W.; Woye, W.; Mack, G. (Tuebingen Univ. (Germany, F.R.). Physikalisches Inst.); Walter, R.L.; Floyd, C.E.; Guss, P.P.; Byrd, R.C. (Duke Univ., Durham, NC (USA). Dept. of Physics; Triangle Universities Nuclear Lab., Durham, NC (USA))

1981-12-15

Considerable improvement in the quality of analyzing power experiments performed with polarized fast neutrons has been achieved during the last few years by using neutrons from the polarization transfer reaction /sup 2/H(d vector,n vector)/sup 3/He at a reaction angle of theta = 0/sup 0/. To compromise in these experiments between intensity problems and finite geometry corrections, it is desirable in some instances to subtend a full-width angle ..delta..theta of 20/sup 0/ (lab) centered about theta = 0/sup 0/. In order to investigate the suitability of this reaction as a source of polarized neutrons for cases where the scatterer is close to the neutron source, the neutron polarization of the reaction /sup 2/H(d vector,n vector)/sup 3/He has been studied with ..delta..theta of about 3/sup 0/ in 3/sup 0/ steps out to theta = 20/sup 0/ (lab). An incident deuteron energy near 8 MeV was chosen to yield outgoing neutrons at 11.0 MeV, a typical energy for neutron analyzing power experiments. It is found that the effective neutron polarization, a combination of the two polarizations measured when the direction of the deuteron polarization is inverted or flipped at the polarized ion source, is large and nearly constant for angles between theta = 0/sup 0/ and theta = 10/sup 0/ (lab).

Development of spin polarized electron beam

International Nuclear Information System (INIS)

Nakanishi, Tsutomu

2001-01-01

Physical structure of the polarized electron beam production is explained in this paper. Nagoya University group has been improving the quality of beam. The present state of quality and the development objects are described. The new results of the polarized electron reported in 'RES-2000 Workshop' in October 2000, are introduced. The established ground of GaAs type polarized electron beam source, observation of the negative electron affinity (NEA) surface, some problems of NEA surface of high energy polarized electron beam such as the life, time response, the surface charge limited phenomena of NEA surface are explained. The interested reports in the RES-2000 Workshop consisted of observation by SPLEEM (Spin Low Energy Electron Microscope), Spin-STM and Spin-resolved Photoelectron Spectroscopy. To increase the performance of the polarized electron source, we will develop low emittance and large current. (S.Y.)

The nature of carrier localisation in polar and nonpolar InGaN/GaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Dawson, P., E-mail: philip.dawson@manchester.ac.uk [School of Physics and Astronomy, Photon Science Institute, University of Manchester, Manchester M13 9PL (United Kingdom); Schulz, S. [Photonics Theory Group, Tyndall National Institute, Dyke Parade, Cork (Ireland); Oliver, R. A.; Kappers, M. J.; Humphreys, C. J. [Department of Material Science and Metallurgy, 27 Charles Babbage Road, University of Cambridge, Cambridge CB3 0FS (United Kingdom)

2016-05-14

In this paper, we compare and contrast the experimental data and the theoretical predictions of the low temperature optical properties of polar and nonpolar InGaN/GaN quantum well structures. In both types of structure, the optical properties at low temperatures are governed by the effects of carrier localisation. In polar structures, the effect of the in-built electric field leads to electrons being mainly localised at well width fluctuations, whereas holes are localised at regions within the quantum wells, where the random In distribution leads to local minima in potential energy. This leads to a system of independently localised electrons and holes. In nonpolar quantum wells, the nature of the hole localisation is essentially the same as the polar case but the electrons are now coulombically bound to the holes forming localised excitons. These localisation mechanisms are compatible with the large photoluminescence linewidths of the polar and nonpolar quantum wells as well as the different time scales and form of the radiative recombination decay curves.

High-n helicity-induced shear Alfven eigenmodes

International Nuclear Information System (INIS)

Nakajima, N.; Cheng, C.Z.; Okamoto, M.

1992-05-01

The high-n Helicity-induced shear Alfven Eigenmodes (HAE) are considered both analytically and numerically for the straight helical magnetic system, where n is the toroidal mode number. The eigenmode equation for the high-n HAE modes is derived along the field line and with the aid of the averaging method is shown to reduce to the Mathieu equation asymptotically. The discrete HAE modes are shown to exist inside the continuum spectrum gaps. The continuous spectrum gaps appear around ω 2 = ω A 2 [N(lι-m)/2] 2 for N = 1,2,.., where ω A is the toroidal Alfven transit frequency, and l, m, and ι are the polarity of helical coils, the toroidal pitch number of helical coils, and the rotational transform, respectively. For the same ω A and ι, the frequency of the helical continuum gap is larger than that of the continuum gap in tokamak plasmas by |l-ι -1 m|. The polarity of helical coils l plays a crucial role in determining the spectrum gaps and the properties of the high-n HAE modes. The spectrum gaps near the magnetic axis are created by the helical ripple with circular flux surfaces for l = 1, and ≥ 3 helicals. For l = 2 helical systems, the spectrum gaps are created by the ellipticity of the flux surfaces. These analytical results for the continuum gaps and the existence of the high-n HAE modes in the continuum gaps are confirmed numerically for the l = 2 case, and we find that the HAE modes exist for mode structures with the even and the odd parities. (author)

Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

International Nuclear Information System (INIS)

He, Xiaoguang; Zhao, Degang; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

2016-01-01

The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

Effect of GaN buffer polarization on electron distribution of AlGaN/GaN heterostructure

Energy Technology Data Exchange (ETDEWEB)

He, Xiaoguang; Zhao, Degang, E-mail: dgzhao@red.semi.ac.cn; Liu, Wei; Yang, Jing; Li, Xiaojing; Li, Xiang

2016-06-15

The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. A misunderstanding about the 2DEG sheet density expression is clarified. It is predicted by theoretical analysis and validated by self-consistent Schrodinger–Poisson numerical simulation that under the force of GaN polarization, large amounts of electrons will accumulate at the GaN/substrate interface in AlGaN/GaN/substrate HEMT structure. - Highlights: • The formation of 2DEG in AlGaN/GaN heterostructure is discussed in detail. • Self-consistent Schrodinger–Poisson numerical simulation is used to modulate the AlGaN/GaN/substrate structure. • It is predicted by that large amounts of electrons will accumulate at the GaN/substrate interface.

Interface and transport properties of metallization contacts to flat and wet-etching roughed N-polar n-type GaN.

Science.gov (United States)

Wang, Liancheng; Liu, Zhiqiang; Guo, Enqing; Yang, Hua; Yi, Xiaoyan; Wang, Guohong

2013-06-26

The electrical characteristics of metallization contacts to flat (F-sample, without wet-etching roughed) and wet-etching roughed (R-sample) N-polar (Nitrogen-polar) n-GaN have been investigated. R-sample shows higher contact resistance (Rc) to Al/Ti/Au (~2.5 × 10(-5) Ω·cm(2)) and higher Schottky barriers height (SBH, ~0.386 eV) to Ni/Au, compared with that of F-sample (~1.3 × 10(-6) Ω·cm(2), ~0.154 eV). Reasons accounting for this discrepancy has been detail investigated and discussed: for R-sample, wet-etching process caused surface state and spontaneous polarization variation will degraded its electrical characteristics. Metal on R-sample shows smoother morphology, however, the effect of metal deposition state on electrical characteristics is negligible. Metallization contact area for both samples has also been further considered. Electrical characteristics of metallization contact to both samples show degradation upon annealing. The VLED chip (1 mm × 1 mm), which was fabricated on the basis of a hybrid scheme, coupling the advantage of F- and R-sample, shows the lowest forward voltage (2.75 V@350 mA) and the highest light output power.

First polarization-engineered compressively strained AlInGaN barrier enhancement-mode MISHFET

International Nuclear Information System (INIS)

Hahn, Herwig; Reuters, Ben; Wille, Ada; Ketteniss, Nico; Kalisch, Holger; Vescan, Andrei; Benkhelifa, Fouad; Ambacher, Oliver

2012-01-01

One current focus of research is the realization of GaN-based enhancement-mode devices. A novel approach for the realization of enhancement-mode behaviour is the utilization of polarization matching between the barrier and the GaN buffer. Yet, the utilization of a quaternary barrier combining polarization engineering together with a large conduction band offset has not been demonstrated so far. Here, epitaxially grown, compressively strained AlInGaN is applied as a nearly polarization-matched barrier layer on GaN resulting in enhancement-mode operation. The insulated-gate devices are fabricated gate-first with Al 2 O 3 as gate dielectric. Passivated metal insulator semiconductor heterostructure field effect transistors yielded threshold voltages (V th ) of up to +1 V. The devices withstand negative and positive gate-biased stress and a positive V th is maintained even after long-time negative bias stress. (paper)

Long quantum channels for high-quality entanglement transfer

International Nuclear Information System (INIS)

Banchi, L; Apollaro, T J G; Cuccoli, A; Verrucchi, P; Vaia, R

2011-01-01

High-quality quantum-state and entanglement transfer can be achieved in an unmodulated spin bus operating in the ballistic regime, which occurs when the endpoint qubits A and B are nonperturbatively coupled to the chain by a suitable exchange interaction j 0 . Indeed, the transition amplitude characterizing the transfer quality exhibits a maximum for a finite optimal value j opt 0 (N), where N is the channel length. We show that j opt 0 (N) scales as N -1/6 for large N and that it ensures a high-quality entanglement transfer even in the limit of arbitrarily long channels, almost independently of the channel initialization. For instance, for any chain length the average quantum-state transmission fidelity exceeds 90% and decreases very little in a broad neighbourhood of j opt 0 (N). We emphasize that, taking the reverse point of view, should j 0 be experimentally constrained, high-quality transfer can still be obtained by adjusting the channel length to its optimal value. (paper)

A high volume, batch mode {sup 129}Xe polarizer

Energy Technology Data Exchange (ETDEWEB)

Wojna-Pelczar, Anna, E-mail: anna.wojna.pelczar@mail.muni.cz [Central European Institute of Technology, Masaryk University, Brno (Czech Republic); Formerly: Marian Smoluchowski Institute of Physics, Jagiellonian University, Kraków (Poland); Pałasz, Tadeusz [Marian Smoluchowski Institute of Physics, Jagiellonian University, Kraków (Poland)

2017-06-01

Numerous designs of optical gas polarizers have been proposed, broadening possible applications of the hyperpolarized gases as contrast agents in magnetic resonance imaging. We present a home–made {sup 129}Xe polarizer based on the spin exchange optical pumping method. The polarizer operates under 1 bar of the gas mixture (at the maximum temperature of 160 °C) in a high volume optical cell (5025 cm{sup 3}). Approximately 100 cm{sup 3} of {sup 129}Xe polarized at 1.50±0.37% is produced in a single cycle of polarization. Operation under standard pressure imposes polarization transfer mainly via van der Waals molecules, resulting in the efficient spin exchange between rubidium and {sup 129}Xe atoms. The design, construction and operation of the polarizer are described in details.

Deuteron tensor polarization in the e-+d →e-+p+n process

International Nuclear Information System (INIS)

Rekalo, M.P.; Gakh, G.I.; Rekalo, A.P.

1988-01-01

The polarization phenomena in the d-vector(e, ep)n reaction caused by the deuteron tensor polarization have been investigated in the relativistic impulse approximation (IA) framework. It is shown that in general case the tensor polarization leads to 16 Asymmetries. Sensitivity of these observables to the choice of the deuteron wave function parametrization has been investigated. The calculated asymmetry in the d-vector(e, pn)e' reation caused by the tensor polarization of the target is in good agreement with experimental data obtained in Novosibirsk. The calculated asymmetry in the nonrelativistic and relativistic IA are significantly different

Polarity control of GaN epitaxial films grown on LiGaO2(001) substrates and its mechanism.

Science.gov (United States)

Zheng, Yulin; Wang, Wenliang; Li, Xiaochan; Li, Yuan; Huang, Liegen; Li, Guoqiang

2017-08-16

The polarity of GaN epitaxial films grown on LiGaO 2 (001) substrates by pulsed laser deposition has been well controlled. It is experimentally proved that the GaN epitaxial films grown on nitrided LiGaO 2 (001) substrates reveal Ga-polarity, while the GaN epitaxial films grown on non-nitrided LiGaO 2 (001) substrates show N-polarity. The growth mechanisms for these two cases are systematically studied by first-principles calculations based on density functional theory. Theoretical calculation presents that the adsorption of a Ga atom preferentially occurs at the center of three N atoms stacked on the nitrided LiGaO 2 (001) substrates, which leads to the formation of Ga-polarity GaN. Whereas the adsorption of a Ga atom preferentially deposits at the top of a N atom stacked on the non-nitrided LiGaO 2 (001) substrates, which results in the formation of N-polarity GaN. This work of controlling the polarity of GaN epitaxial films is of paramount importance for the fabrication of group-III nitride devices for various applications.

Tuning the polarization-induced free hole density in nanowires graded from GaN to AlN

Science.gov (United States)

Golam Sarwar, A. T. M.; Carnevale, Santino D.; Kent, Thomas F.; Yang, Fan; McComb, David W.; Myers, Roberto C.

2015-01-01

We report a systematic study of p-type polarization-induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of samples from 0.7%Al/nm to 4.95%Al/nm corresponding to negative bound polarization charge densities of 2.2 × 1018 cm-3 to 1.6 × 1019 cm-3. Capacitance measurements and energy band modeling reveal that for gradients greater than or equal to 1.30%Al/nm, the deep donor concentration is negligible and free hole concentrations roughly equal to the bound polarization charge density are achieved up to 1.6 × 1019 cm-3 at a gradient of 4.95%Al/nm. Accurate grading lengths in the p- and n-side of the pn-junction are extracted from scanning transmission electron microscopy images and are used to support energy band calculation and capacitance modeling. These results demonstrate the robust nature of p-type polarization doping in nanowires and put an upper bound on the magnitude of deep donor compensation.

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

International Nuclear Information System (INIS)

Yang, A. L.; Yamashita, Y.; Kobata, M.; Yoshikawa, H.; Sakata, O.; Kobayashi, K.; Matsushita, T.; Píš, I.; Imura, M.; Yamaguchi, T.; Nanishi, Y.

2013-01-01

Near-surface structures of polar InN films were investigated by laboratory-based hard X-ray photoelectron diffraction (HXPD) with chemical-state-discrimination. HXPD patterns from In 3d 5/2 and N 1s core levels of the In-polar and N-polar InN films were different from each other and compared with the simulation results using a multiple-scattering cluster model. It was found that the near-surface structure of the In-polar InN film was close to the ideal wurtzite structure. On the other hand, on the N-polar InN film, defects-rich surface was formed. In addition, the existence of the In-polar domains was observed in the HXPD patterns.

Polarization-Resolved Study of High Harmonics from Bulk Semiconductors

Science.gov (United States)

Kaneshima, Keisuke; Shinohara, Yasushi; Takeuchi, Kengo; Ishii, Nobuhisa; Imasaka, Kotaro; Kaji, Tomohiro; Ashihara, Satoshi; Ishikawa, Kenichi L.; Itatani, Jiro

2018-06-01

The polarization property of high harmonics from gallium selenide is investigated using linearly polarized midinfrared laser pulses. With a high electric field, the perpendicular polarization component of the odd harmonics emerges, which is not present with a low electric field and cannot be explained by the perturbative nonlinear optics. A two-dimensional single-band model is developed to show that the anisotropic curvature of an energy band of solids, which is pronounced in an outer part of the Brillouin zone, induces the generation of the perpendicular odd harmonics. This model is validated by three-dimensional quantum mechanical simulations, which reproduce the orientation dependence of the odd-order harmonics. The quantum mechanical simulations also reveal that the odd- and even-order harmonics are produced predominantly by the intraband current and interband polarization, respectively. These experimental and theoretical demonstrations clearly show a strong link between the band structure of a solid and the polarization property of the odd-order harmonics.

Understanding Residential Polarization in a Globalizing City

Directory of Open Access Journals (Sweden)

Ibrahim Rotimi Aliu

2013-12-01

Full Text Available This study examines the spatial polarization that characterizes the dwellings in the African leading megacity of Lagos. Data were collected through an extensive housing survey carried out on 1,485 household residences in 56 wards within 12 administrative units in Lagos megacity. The spatial dimension of residential density in the city generates three unique residential patterns which are low residential density (LRD, medium residential density (MRD, and high residential density (HRD areas. Descriptive and multivariate inferential statistics were used to render explanations for the spatial variations in the residential quality variables in the study area. Findings indicated that a clear difference exists in the residential quality within the three residential density areas of Lagos. High correlations exist among the residential quality indicators and housing type. The principal component analysis shows that residential polarizations that occur in the LRD, MRD, and HRD are based on the location, dwelling facility, interior and exterior quality, neighborhood integrity, social bond, barrier to entry, and security. The practical implications of residential polarizations along the residential density areas are explicitly expressed.

Beyond conventional c-plane GaN-based light emitting diodes: A systematic exploration of LEDs on semi-polar orientations

Science.gov (United States)

Monavarian, Morteza

Despite enormous efforts and investments, the efficiency of InGaN-based green and yellow-green light emitters remains relatively low, and that limits progress in developing full color display, laser diodes, and bright light sources for general lighting. The low efficiency of light emitting devices in the green-to-yellow spectral range, also known as the "Green Gap", is considered a global concern in the LED industry. The polar c-plane orientation of GaN, which is the mainstay in the LED industry, suffers from polarization-induced separation of electrons and hole wavefunctions (also known as the "quantum confined Stark effect") and low indium incorporation efficiency that are the two main factors that contribute to the Green Gap phenomenon. One possible approach that holds promise for a new generation of green and yellow light emitting devices with higher efficiency is the deployment of nonpolar and semi-polar crystallographic orientations of GaN to eliminate or mitigate polarization fields. In theory, the use of other GaN planes for light emitters could also enhance the efficiency of indium incorporation compared to c-plane. In this thesis, I present a systematic exploration of the suitable GaN orientation for future lighting technologies. First, in order to lay the groundwork for further studies, it is important to discuss the analysis of processes limiting LED efficiency and some novel designs of active regions to overcome these limitations. Afterwards, the choice of nonpolar orientations as an alternative is discussed. For nonpolar orientation, the (1100)-oriented (mo-plane) structures on patterned Si (112) and freestanding m-GaN are studied. The semi-polar orientations having substantially reduced polarization field are found to be more promising for light-emitting diodes (LEDs) owing to high indium incorporation efficiency predicted by theoretical studies. Thus, the semi-polar orientations are given close attention as alternatives for future LED technology

Polarization phenomena in few-body systems

International Nuclear Information System (INIS)

Conzett, H.E.

1975-12-01

Recent polarization studies in N--N scattering at and below 50 MeV have provided specific and significant improvements in the phase-shift parameters. High energy investigations with both polarized proton beams and targets have shown unexpectedly large spin effects, and this provides a challenge for theoretical effort to explain these results. Experimental and theoretical work on the three-nucleon problem continues to yield new and interesting results, with the emphasis now shifting to polarization studies in the breakup reaction. On-going work on several-nucleon systems continues to provide polarization data for general analyses, nuclear structure information, or specific resonance effects. Finally, the basic interaction symmetries continue to have unique and important consequences for polarization observables. 17 figures

Generation of Bright Phase-matched Circularly-polarized Extreme Ultraviolet High Harmonics

Science.gov (United States)

2014-12-08

1995). 42. Eichmann , H. et al. Polarization-dependent high-order two-color mixing. Phys. Rev. A 51, R3414–R3417 (1995). 43. Fleischer, A., Kfir, O...calculations of polarization-dependent two- color high-harmonic generation. Phys. Rev. A 52, 2262–2278 (1995). 10. Eichmann , H. et al. polarization

A high field optical-pumping spin-exchange polarized deuterium source

International Nuclear Information System (INIS)

Coulter, K.P.; Holt, R.J.; Kinney, E.R.; Kowalczyk, R.S.; Poelker, M.; Potterveld, D.H.; Young, L.; Zeidman, B.; Toporkov, D.

1992-01-01

Recent results from a prototype high field optical-pumping spin-exchange polarized deuterium source are presented. Atomic polarization as high as 62% have been observed with an intensity of 6.3 x 10 17 atoms-sec -1 and 65% dissociation fraction

Detailed studies of a high-density polarized hydrogen gas target for storage rings

International Nuclear Information System (INIS)

Zapfe, K.; Brueckner, W.; Gaul, H.G.; Grieser, M.; Lin, M.T.; Moroz, Z.; Povh, B.; Rall, M.; Stechert, B.; Steffens, E.; Stenger, J.; Stock, F.; Tonhaeuser, J.; Montag, C.; Rathmann, F.; Fick, D.; Braun, B.; Graw, G.; Haeberli, W.

1996-01-01

A high-density target of polarized atomic hydrogen gas for applications in storage rings was produced by injecting atoms from an atomic beam source into a T-shaped storage cell. The influence of the internal gas target on electron-cooled beams of 27 MeV α-particles and 23 MeV protons in the Heidelberg Test Storage Ring has been studied in detail. Target polarization and target thickness were measured by means of 27 MeV α-particles. For hyperfine states 1+2 a target thickness of n=(0.96±0.04) x 10 14 H/cm 2 was achieved with the cell walls cooled to 100 K. Working with a weak magnetic holding field (∼5 G) the maximum target polarization was P T =0.84±0.02 when state 1 and P T =0.46±0.01 when states 1+2 were injected. The target polarization was found to be constant over a period of 3 months with a net charge of Q∼100 C passing the storage cell. (orig.)

Growth of GaN-based non- and semipolar heterostructures for high efficiency light emitters; Wachstum von nicht- und semipolaren InAIGaN-Heterostrukturen fuer hocheffiziente Lichtemitter

Energy Technology Data Exchange (ETDEWEB)

Wernicke, Tim

2010-07-01

Optoelectronic devices based on GaN and its alloys InGaN and AlGaN are capable of emitting light from the visible to the ultraviolet spectral region. Blue and green lasers have applications in laser projectors, DNA sequencing and spectroscopy. But it is extremely difficult to fabricate green laser diodes. Currently almost all of the light emitting diodes (LEDs) and lasers are grown on GaN crystals that are oriented in the polar (0001) c-plane direction, which provides the most stable growth surface. However the resulting polarization fields on (0001)GaN have detrimental effects on the optical properties of nitride light emitters, e.g. causing significant wavelength shifts and reduced efficiencies in InGaN LEDs. Growth on crystal surfaces with non- and semipolar orientations, e.g. (10 anti 10) m-plane or (11 anti 22), could enable devices with new and improved optical properties. For example, for nonpolar and semipolar LEDs the degree of polarization of the emitted light can be tailored. Furthermore easier to grow devices with green light emission, since the indium incorporation is enhanced for semipolar orientations. In contrast to c-plane GaN there is no polarization field across quantum wells on nonpolar GaN. By reducing the polarization fields an increase in the radiative recombination rate can be expected and would lead to higher LED efficiencies and lower laser thresholds. One of the biggest challenges for the growth of light emitters on non- and semipolar GaN is the choice of a suitable substrate: Heteroepitaxial growth on sapphire or LiAlO{sub 2} allows the deposition of GaN on 2'' diameter wafers and larger. However, these layers show a very high defect density in particular basal plane stacking faults, in comparison to c-plane GaN on sapphire. In order to reduce the defect density we applied successfully epitaxial lateral overgrowth to heteroepitaxial nonpolar a-plane GaN and verified the improvement by spatially and spectrally

Polarization in high Psub(trans) and cumulative hadron production

International Nuclear Information System (INIS)

Efremov, A.V.

1978-01-01

The final hadron polarization in the high Psub(trans) processes is analyzed in the parton hard scattering picture. Scaling assumption allows a correct qualitative description to be given for the Psub(trans)-behaviour of polarization or escape angle behaviour in cumulative production. The energy scaling and weak dependence on the beam and target type is predicted. A method is proposed for measuring the polarization of hadron jets

Sources of linear polarized x-rays

International Nuclear Information System (INIS)

Aiginger, H.; Wobrauschek, P.

1989-01-01

Linear polarized X-rays are used in X-ray fluorescence analysis to decrease the background caused by scattered photons. Various experiments, calculations and constructions have demonstrated the possibility to produce polarized radiation in an analytical laboratory with an X-ray tube and polarizer-analyzer facilities as auxiliary equipment. The results obtained with Bragg-polarizers of flat and curved focussing geometry and of Barkla-polarizers are presented. The advantages and disadvantages of the method are discussed and compared with the respective quality of synchrotron radiation. Polarization by scattering reduces the intensity of the primary radiation. Recently much effort is devoted to the construction of integrated high power X-ray tube polarizer-analyzer arrangements. The detailed design, geometry and performance of such a facility is described. (author)

High-energy polarized proton beams a modern view

CERN Document Server

Hoffstaetter, Georg Heinz

2006-01-01

This monograph begins with a review of the basic equations of spin motion in particle accelerators. It then reviews how polarized protons can be accelerated to several tens of GeV using as examples the preaccelerators of HERA, a 6.3 km long cyclic accelerator at DESY / Hamburg. Such techniques have already been used at the AGS of BNL / New York, to accelerate polarized protons to 25 GeV. But for acceleration to energies of several hundred GeV as in RHIC, TEVATRON, HERA, LHC, or a VLHC, new problems can occur which can lead to a significantly diminished beam polarization. For these high energies, it is necessary to look in more detail at the spin motion, and for that the invariant spin field has proved to be a useful tool. This is already widely used for the description of high-energy electron beams that become polarized by the emission of spin-flip synchrotron radiation. It is shown that this field gives rise to an adiabatic invariant of spin-orbit motion and that it defines the maximum time average polarizat...

Dependence of N-polar GaN rod morphology on growth parameters during selective area growth by MOVPE

Science.gov (United States)

Li, Shunfeng; Wang, Xue; Mohajerani, Matin Sadat; Fündling, Sönke; Erenburg, Milena; Wei, Jiandong; Wehmann, Hergo-Heinrich; Waag, Andreas; Mandl, Martin; Bergbauer, Werner; Strassburg, Martin

2013-02-01

Selective area growth of GaN rods by metalorganic vapor phase epitaxy has attracted great interest due to its novel applications in optoelectronic and photonics. In this work, we will present the dependence of GaN rod morphology on various growth parameters i.e. growth temperature, H2/N2 carrier gas concentration, V/III ratio, total carrier gas flow and reactor pressure. It is found that higher growth temperature helps to increase the aspect ratio of the rods, but reduces the height homogeneity. Furthermore, H2/N2 carrier gas concentration is found to be a critical factor to obtain vertical rod growth. Pure nitrogen carrier gas leads to irregular growth of GaN structure, while an increase of hydrogen carrier gas results in vertical GaN rod growth. Higher hydrogen carrier gas concentration also reduces the diameter and enhances the aspect of the GaN rods. Besides, increase of V/III ratio causes reduction of the aspect ratio of N-polar GaN rods, which could be explained by the relatively lower growth rate on (000-1) N-polar top surface when supplying more ammonia. In addition, an increase of the total carrier gas flow leads to a decrease in the diameter and the average volume of GaN rods. These phenomena are tentatively explained by the change of partial pressure of the source materials and boundary layer thickness in the reactor. Finally, it is shown that the average volume of the N-polar GaN rods keeps a similar value for a reactor pressure PR of 66 and 125 mbar, while an incomplete filling of the pattern opening is observed with PR of 250 mbar. Room temperature photoluminescence spectrum of the rods is also briefly discussed.

High-Order Dielectric Metasurfaces for High-Efficiency Polarization Beam Splitters and Optical Vortex Generators

Science.gov (United States)

Guo, Zhongyi; Zhu, Lie; Guo, Kai; Shen, Fei; Yin, Zhiping

2017-08-01

In this paper, a high-order dielectric metasurface based on silicon nanobrick array is proposed and investigated. By controlling the length and width of the nanobricks, the metasurfaces could supply two different incremental transmission phases for the X-linear-polarized (XLP) and Y-linear-polarized (YLP) light with extremely high efficiency over 88%. Based on the designed metasurface, two polarization beam splitters working in high-order diffraction modes have been designed successfully, which demonstrated a high transmitted efficiency. In addition, we have also designed two vortex-beam generators working in high-order diffraction modes to create vortex beams with the topological charges of 2 and 3. The employment of dielectric metasurfaces operating in high-order diffraction modes could pave the way for a variety of new ultra-efficient optical devices.

Circular polarization with crossed-planar undulators in high-gain FELs

CERN Document Server

Kim, K J K J

2000-01-01

We propose a crossed undulator configuration for a high-gain free-electron laser to allow versatile polarization control. This configuration consists of a long (saturation length) planar undulator, a dispersive section, and a short (a few gain lengths) planar undulator oriented perpendicular to the first one. In the first undulator, a radiation component linearly polarized in the x-direction is amplified to saturation. In the second undulator, the x-polarized component propagates freely, while a new component, polarized in the y-direction, is generated and reaches saturation in a few gain lengths. By adjusting the strength of the dispersive section, the relative phase of two radiation components can be adjusted to obtain a suitable polarization for the total radiation field, including the circular polarization. The operating principle of the high-gain crossed undulator, which is quite different from that of the crossed undulator for spontaneous radiation, is illustrated in terms of 1-D FEL theory.

On the possibility of obtaining high-energy polarized electrons on Yerevan synchrotron

International Nuclear Information System (INIS)

Melikyan, R.A.

1975-01-01

A possibility of producing high-energy polarized electrons on the Yerevan synchrotron is discussed. A review of a number of low-energy polarized electron sources and of some of experiments with high-energy polarized electrons is given

Technetium-99m labelled N,N-ethyldithiocarbamate, a non-polar complex with slow hepatic clearance

International Nuclear Information System (INIS)

Pojer, P.M.; Baldas, J.

1980-05-01

A sup(99m)Tc-N,N-diethyldithiocarbamate (DDC) complex was prepared using formamidine sulphinic acid as the reducing agent for pertechnetate sup(99m) Tc. The complex was found to be non-polar. In mice the complex localised in the liver and intestines. Urinary excretion was very low and hepatic clearance relatively slow

Polar gamma ray mode for testing weld quality natural gas pipeline

International Nuclear Information System (INIS)

Shahout, A. M.; Mahmood, A.Sh.

2005-01-01

The polar gamma-ray radiography method was studied extensively, gamma ray from Ir 192 source was used to detect weld defects in the main gas pipeline extending from Kh oms to Tripoli, gamma ray radiographic inspections were carried out according to the Astm(1) standards, and the radiographs were analyzed according to quality specifications API(2) standard-1104. The polar gamma ray mode has been applied to specimens of weld joints of pipes used in this pipeline in the reg [the kilometer 118(3)] and [the kilometer 123], and weld joints in the SLR 7 stz in the region [the kilometer 125]. The results obtained from gamma-rays have discussed and analyzed

Engaging Montana high school students in optical sciences with a polarization photo contest

Science.gov (United States)

Tauc, Martin Jan; Boger, James K.; Hohne, Andrew; Dahl, Laura M.; Nugent, Paul W.; Riesland, David W.; Moon, Benjamin; Baumbauer, Carol L.; Boese, Orrin; Shaw, Joseph A.; Nakagawa, Wataru

2017-08-01

Getting students interested in science, specifically in optics and photonics, is a worthwhile challenge. We developed and implemented an outreach campaign that sought to engage high school students in the science of polarized light. We traveled to Montana high schools and presented on the physics of light, the ways that it becomes polarized, how polarization is useful, and how to take pictures with linear polarizers to see polarization. Students took pictures that showed polarization in either a natural setting or a contrived scene. We visited 13 high schools, and presented live to approximately 450 students.

High-energy nuclear optics of polarized particles

CERN Document Server

Baryshevsky, Vladimir G

2012-01-01

The various phenomena caused by refraction and diffraction of polarized elementary particles in matter have opened up a new research area in the particle physics: nuclear optics of polarized particles. Effects similar to the well-known optical phenomena such as birefringence and Faraday effects, exist also in particle physics, though the particle wavelength is much less than the distance between atoms of matter. Current knowledge of the quasi-optical effects, which exist for all particles in any wavelength range (and energies from low to extremely high), will enable us to investigate different properties of interacting particles (nuclei) in a new aspect. This pioneering book will provide detailed accounts of quasi-optical phenomena in the particle polarization, and will interest physicists and professionals in experimental particle physics.

GaN polarity determination by photoelectron diffraction

Czech Academy of Sciences Publication Activity Database

Romanyuk, Olexandr; Jiříček, Petr; Paskova, T.; Bieloshapka, Igor; Bartoš, Igor

2013-01-01

Roč. 103, č. 9 (2013), "091601-1"-"091601-4" ISSN 0003-6951 R&D Projects: GA ČR(CZ) GBP108/12/G108 Grant - others:AV ČR(CZ) M100101201 Institutional support: RVO:68378271 Keywords : GaN * photoelectron diffraction * wurtzite * surface polarity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.515, year: 2013 http://apl.aip.org/resource/1/applab/v103/i9/p091601_s1?isAuthorized=no

The distribution of polarized radio sources >15 μJy IN GOODS-N

International Nuclear Information System (INIS)

Rudnick, L.; Owen, F. N.

2014-01-01

We present deep Very Large Array observations of the polarization of radio sources in the GOODS-N field at 1.4 GHz at resolutions of 1.''6 and 10''. At 1.''6, we find that the peak flux cumulative number count distribution is N(> p) ∼ 45*(p/30 μJy) –0.6 per square degree above a detection threshold of 14.5 μJy. This represents a break from the steeper slopes at higher flux densities, resulting in fewer sources predicted for future surveys with the Square Kilometer Array and its precursors. It provides a significant challenge for using background rotation measures (RMs) to study clusters of galaxies or individual galaxies. Most of the polarized sources are well above our detection limit, and they are also radio galaxies that are well-resolved even at 10'', with redshifts from ∼0.2-1.9. We determined a total polarized flux for each source by integrating the 10'' polarized intensity maps, as will be done by upcoming surveys such as POSSUM. These total polarized fluxes are a factor of two higher, on average, than the peak polarized flux at 1.''6; this would increase the number counts by ∼50% at a fixed flux level. The detected sources have RMs with a characteristic rms scatter of ∼11 rad m –2 around the local Galactic value, after eliminating likely outliers. The median fractional polarization from all total intensity sources does not continue the trend of increasing at lower flux densities, as seen for stronger sources. The changes in the polarization characteristics seen at these low fluxes likely represent the increasing dominance of star-forming galaxies.

A Measurement of GE^n at High Momentum Transfer in Hall A

Science.gov (United States)

Feuerbach, Robert J.; Wojtsekhowski, Bogdan

2006-10-01

A precision measurement of the electric form-factor of the neutron, GE^n, at Q^2 up to 3.5 GeV^2 was recently completed in Hall A at the Thomas Jefferson National Accelerator Facility(Jefferson Lab). The ratio GE^n/GM^n was measured through the beam-target asymmetry A of electrons quasi-elastically scattered off neutrons in the reaction ^3He(e,e' n). The experiment took advantage of recent developments of the electron beam and target, as well as two detectors new to Jefferson Lab. The measurement used the accelerator's 100% duty-cycle high-polarization (typically 84%) electron beam and a new, hybrid optically-pumped polarized ^3He target which achieved polarizations above 50%. A medium acceptance (80msr) open-geometry magnetic spectrometer (BigBite) detected the scattered electron, while a new neutron detector was constructed to observe the released neutron. An overview of the experiment and the experimental motivation will be discussed, in particular the large range of predictions from modern calculations for GE^n at this relatively high Q^2. Finally, the analysis progress and preliminary results will be presented.

High contributions of sea ice derived carbon in polar bear (Ursus maritimus) tissue.

Science.gov (United States)

Brown, Thomas A; Galicia, Melissa P; Thiemann, Gregory W; Belt, Simon T; Yurkowski, David J; Dyck, Markus G

2018-01-01

Polar bears (Ursus maritimus) rely upon Arctic sea ice as a physical habitat. Consequently, conservation assessments of polar bears identify the ongoing reduction in sea ice to represent a significant threat to their survival. However, the additional role of sea ice as a potential, indirect, source of energy to bears has been overlooked. Here we used the highly branched isoprenoid lipid biomarker-based index (H-Print) approach in combination with quantitative fatty acid signature analysis to show that sympagic (sea ice-associated), rather than pelagic, carbon contributions dominated the marine component of polar bear diet (72-100%; 99% CI, n = 55), irrespective of differences in diet composition. The lowest mean estimates of sympagic carbon were found in Baffin Bay bears, which were also exposed to the most rapidly increasing open water season. Therefore, our data illustrate that for future Arctic ecosystems that are likely to be characterised by reduced sea ice cover, polar bears will not only be impacted by a change in their physical habitat, but also potentially in the supply of energy to the ecosystems upon which they depend. This data represents the first quantifiable baseline that is critical for the assessment of likely ongoing changes in energy supply to Arctic predators as we move into an increasingly uncertain future for polar ecosystems.

Metallic metasurfaces for high efficient polarization conversion control in transmission mode.

Science.gov (United States)

Li, Tong; Hu, Xiaobin; Chen, Huamin; Zhao, Chen; Xu, Yun; Wei, Xin; Song, Guofeng

2017-10-02

A high efficient broadband polarization converter is an important component in integrated miniaturized optical systems, but its performances is often restricted by the material structures, metallic metasurfaces for polarization control in transmission mode never achieved efficiency above 0.5. Herein, we theoretically demonstrate that metallic metasurfaces constructed by thick cross-shaped particles can realize a high efficient polarization transformation over a broadband. We investigated the resonant properties of designed matesurfaces and found that the interaction between double FP cavity resonances and double bulk magnetic resonances is the main reason to generate a high transmissivity over a broadband. In addition, through using four resonances effect and tuning the anisotropic optical response, we realized a high efficient (> 0.85) quarter-wave plate at the wavelength range from 1175nm to 1310nm and a high efficient (> 0.9) half-wave plate at the wavelength range from 1130nm to 1230nm. The proposed polarization converters may have many potential applications in integrated polarization conversion devices and optical data storage systems.

KEK/NAGOYA/SLAC: Highly polarized electrons

International Nuclear Information System (INIS)

Anon.

1994-01-01

In the push by the Japanese KEK Laboratory, in collaboration with university groups and overseas laboratories, to develop new techniques for the future Japan electronpositron collider (JLC), a recent achievement is a significant increase in the efficient yield of highly polarized electrons

Influence of fatty acid composition on the formation of polar glycerides and polar fatty acids in sunflower oils heated at frying temperatures.

Directory of Open Access Journals (Sweden)

Jorge, N.

1997-02-01

Full Text Available Conventional and high oleic sunflower oils as well as 50% mixture of both of them were heated at different temperatures under well-controlled conditions. Total polar compounds, the main groups of polar glycerides, total polar fatty acids, the main groups of polar fatty acids and the loss of initial fatty acids were quantitated. The most outstanding results demonstrated the primacy of the formation of glyceridic polymerization compounds during heating at high temperatures. After transesterification of the samples dimeric fatty acids was the most significant group of compounds obtained. As expected, linoleic acid was preferentially involved in the formation of polar fatty acids, although the participation of oleic acid became very important at low concentration of linoleic acid. Finally good statistical figures were obtained for the regression of polar fatty acids on polar compounds.

Aceites de girasol convencional y alto oleico así como una mezcla al 50% de ambos fueron calentados a diferentes temperaturas bajo condiciones controladas. Se cuantificaron los compuestos polares totales, los grupos principales de glicéridos, ácidos grasos polares totales, los grupos principales de ácidos grasos polares y la pérdida de ácidos grasos iniciales. Los resultados más relevantes demostraron la primacía de la formación de compuestos de polimerización glicerídicos durante el calentamiento a altas temperaturas. Después de la transesterificación de las muestras, los ácidos diméricos constituyeron el grupo más significativo de compuestos obtenidos. Como era esperado, el ácido linoleico contribuyó preferentemente en la formación de los ácidos grasos polares, si bien la participación del ácido oleico fue muy importante a bajas concentraciones de ácido linoleico. Finalmente, se obtuvieron buenos resultados estadísticos para la regresión entre ácidos grasos polares y compuestos polares.

Influenza H5N1 virus infection of polarized human alveolar epithelial cells and lung microvascular endothelial cells

Directory of Open Access Journals (Sweden)

Yuen Kit M

2009-10-01

Full Text Available Abstract Background Highly pathogenic avian influenza (HPAI H5N1 virus is entrenched in poultry in Asia and Africa and continues to infect humans zoonotically causing acute respiratory disease syndrome and death. There is evidence that the virus may sometimes spread beyond respiratory tract to cause disseminated infection. The primary target cell for HPAI H5N1 virus in human lung is the alveolar epithelial cell. Alveolar epithelium and its adjacent lung microvascular endothelium form host barriers to the initiation of infection and dissemination of influenza H5N1 infection in humans. These are polarized cells and the polarity of influenza virus entry and egress as well as the secretion of cytokines and chemokines from the virus infected cells are likely to be central to the pathogenesis of human H5N1 disease. Aim To study influenza A (H5N1 virus replication and host innate immune responses in polarized primary human alveolar epithelial cells and lung microvascular endothelial cells and its relevance to the pathogenesis of human H5N1 disease. Methods We use an in vitro model of polarized primary human alveolar epithelial cells and lung microvascular endothelial cells grown in transwell culture inserts to compare infection with influenza A subtype H1N1 and H5N1 viruses via the apical or basolateral surfaces. Results We demonstrate that both influenza H1N1 and H5N1 viruses efficiently infect alveolar epithelial cells from both apical and basolateral surface of the epithelium but release of newly formed virus is mainly from the apical side of the epithelium. In contrast, influenza H5N1 virus, but not H1N1 virus, efficiently infected polarized microvascular endothelial cells from both apical and basolateral aspects. This provides a mechanistic explanation for how H5N1 virus may infect the lung from systemic circulation. Epidemiological evidence has implicated ingestion of virus-contaminated foods as the source of infection in some instances and our

High-efficiency terahertz polarization devices based on the dielectric metasurface

Science.gov (United States)

Zhou, Jian; Wang, JingJing; Guo, Kai; Shen, Fei; Zhou, Qingfeng; Zhiping yin; Guo, Zhongyi

2018-02-01

Metasurfaces are composed of the subwavelength structures, which can be used to manipulate the amplitude, phase, and polarization of incident electromagnetic waves efficiently. Here, we propose a novel type of dielectric metasurface based on crystal Si for realizing to manipulate the terahertz wave, in which by varying the geometric sizes of the Si micro-bricks, the transmitting phase of the terahertz wave can almost span over the entire 2π range for both of the x-polarization and y-polarization simultaneously, while keeping the similarly high-transmission amplitudes (over 90%). At the frequency of 1.0 THz, we have successfully designed a series of controllable THz devices, such as the polarization-dependent beam splitter, polarization-independent beam deflector and the focusing lenses based on the designed metasurfaces. Our designs are easy to fabricate and can be promising in developing high-efficiency THz functional devices.

Influence of the channel electric field distribution on the polarization Coulomb field scattering in AlGaN/AlN/GaN heterostructure field-effect transistors

Directory of Open Access Journals (Sweden)

Yingxia Yu

2013-09-01

Full Text Available Using the Quasi-Two-Dimensional (quasi-2D model, the current-voltage (I-V characteristics of AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs with different gate length were simulated based on the measured capacitance-voltage (C-V characteristics and I-V characteristics. By analyzing the simulation results, we found that the different polarization charge distribution generated by the different channel electric field distribution can result in different polarization Coulomb field scattering, and the difference of the electron mobility mostly caused by the polarization Coulomb field scattering can reach up to 1829.9 cm2/V·s for the prepared AlGaN/AlN/GaN HFET. In addition, it was also found that when the two-dimension electron gas (2DEG sheet density is modulated by the drain-source bias, the electron mobility appears peak with the variation of the 2DEG sheet density, and the ratio of gate length to drain-source distance is smaller, the 2DEG sheet density corresponding to the peak point is higher.

Improved results for the 2H(d, n)3He transverse vector polarization-transfer coefficient Kyy'(0o) at low energies

International Nuclear Information System (INIS)

Roper, C.D.; Dunham, J.D.; Clegg, T.B.; Mendez, A.J.; Tornow, W.; Walter, R.L.

2010-01-01

Measurements of the 2 H(d, n) 3 He transverse vector polarization-transfer coefficient K y y' at 0 o . are reported for 29 outgoing neutron energies between 3.94 and 8.47 MeV. Our new results determine K y y' (0 o ) more accurately than previous data, especially for neutron energies below 5 MeV. Low-energy data for this reaction are important both as a high-intensity source of highly polarized neutrons for nuclear physics studies with polarized neutron beams, and as a test of the emerging theoretical descriptions of the four-body system, where recently substantial progress has been made. (author)

High-accuracy self-mixing interferometer based on single high-order orthogonally polarized feedback effects.

Science.gov (United States)

Zeng, Zhaoli; Qu, Xueming; Tan, Yidong; Tan, Runtao; Zhang, Shulian

2015-06-29

A simple and high-accuracy self-mixing interferometer based on single high-order orthogonally polarized feedback effects is presented. The single high-order feedback effect is realized when dual-frequency laser reflects numerous times in a Fabry-Perot cavity and then goes back to the laser resonator along the same route. In this case, two orthogonally polarized feedback fringes with nanoscale resolution are obtained. This self-mixing interferometer has the advantages of higher sensitivity to weak signal than that of conventional interferometer. In addition, two orthogonally polarized fringes are useful for discriminating the moving direction of measured object. The experiment of measuring 2.5nm step is conducted, which shows a great potential in nanometrology.

Research on generating various polarization-modes in polarized illumination system

Science.gov (United States)

Huang, Jinping; Lin, Wumei; Fan, Zhenjie

2013-08-01

With the increase of the numerical aperture (NA), the polarization of light affects the imaging quality of projection lens more significantly. On the contrary, according to the mask pattern, the resolution of projection lens can be improved by using the polarized illumination. That is to say, using the corresponding polarized beam (or polarization-mode) along with the off-axis illumination will improve the resolution and the imaging quality of the of projection lens. Therefore, the research on the generation of various polarization modes and its conversion methods become more and more important. In order to realize various polarization modes in polarized illumination system, after read a lot of references, we provide a way that fitting for the illumination system with the wavelength of 193nm.Six polarization-modes and a depolarized mode are probably considered. Wave-plate stack is used to generate linearly polarization-mode, which have a higher degree polarization. In order to generate X-Y and Y-X polarization mode, the equipment consisting of four sectors of λ/2 wave plate was used. We combined 16 sectors of λ/2 wave plate which have different orientations of the "slow" axis to generate radial and azimuthal polarization. Finally, a multi-polarization control device was designed. Using the kind of multi-polarization control device which applying this method could help to choose the polarization modes conveniently and flexibility for the illumination system.

Polarization holograms allow highly efficient generation of complex light beams.

Science.gov (United States)

Ruiz, U; Pagliusi, P; Provenzano, C; Volke-Sepúlveda, K; Cipparrone, Gabriella

2013-03-25

We report a viable method to generate complex beams, such as the non-diffracting Bessel and Weber beams, which relies on the encoding of amplitude information, in addition to phase and polarization, using polarization holography. The holograms are recorded in polarization sensitive films by the interference of a reference plane wave with a tailored complex beam, having orthogonal circular polarizations. The high efficiency, the intrinsic achromaticity and the simplicity of use of the polarization holograms make them competitive with respect to existing methods and attractive for several applications. Theoretical analysis, based on the Jones formalism, and experimental results are shown.

High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

KAUST Repository

Mumthaz Muhammed, Mufasila; Peres, M.; Yamashita, Y.; Morishima, Y.; Sato, S.; Franco, N.; Lorenz, K.; Kuramata, A.; Roqan, Iman S.

2014-01-01

Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

High optical and structural quality of GaN epilayers grown on ( 2¯01) β-Ga2O3

KAUST Repository

Mumthaz Muhammed, Mufasila

2014-07-28

Producing highly efficient GaN-based optoelectronic devices has been a challenge for a long time due to the large lattice mismatch between III-nitride materials and the most common substrates, which causes a high density of threading dislocations. Therefore, it is essential to obtain alternative substrates with small lattice mismatches, appropriate structural, thermal and electrical properties, and a competitive price. Our results show that (2̄01) oriented β-Ga2O3 has the potential to be used as a transparent and conductive substrate for GaN-growth. Photoluminescence spectra of thick GaN layers grown on (2̄01) oriented β-Ga 2O3 are found to be dominated by intense bandedge emission. Atomic force microscopy studies show a modest threading dislocation density of ∼108cm-2. X-ray diffraction studies show the high quality of the single-phase wurtzite GaN thin film on (2̄01) β-Ga2O3 with in-plane epitaxial orientation relationships between the β-Ga2O3 and the GaN thin film defined by (010) β-Ga2O3 || (112̄0) GaN and (2̄01) β-Ga2O3 || (0001) GaN leading to a lattice mismatch of ∼4.7%. Complementary Raman spectroscopy indicates that the quality of the GaN epilayer is high. © 2014 AIP Publishing LLC.

Fast, High-Precision Optical Polarization Synthesizer for Ultracold-Atom Experiments

Science.gov (United States)

Robens, Carsten; Brakhane, Stefan; Alt, Wolfgang; Meschede, Dieter; Zopes, Jonathan; Alberti, Andrea

2018-03-01

We present a technique for the precision synthesis of arbitrary polarization states of light with a high modulation bandwidth. Our approach consists of superimposing two laser light fields with the same wavelength, but with opposite circular polarizations, where the phase and the amplitude of each light field are individually controlled. We find that the polarization-synthesized beam reaches a degree of polarization of 99.99%, which is mainly limited by static spatial variations of the polarization state over the beam profile. We also find that the depolarization caused by temporal fluctuations of the polarization state is about 2 orders of magnitude smaller. In a recent work, Robens et al. [Low-Entropy States of Neutral Atoms in Polarization-Synthesized Optical Lattices, Phys. Rev. Lett. 118, 065302 (2017), 10.1103/PhysRevLett.118.065302] demonstrated an application of the polarization synthesizer to create two independently controllable optical lattices which trap atoms depending on their internal spin state. We use ultracold atoms in polarization-synthesized optical lattices to give an independent, in situ demonstration of the performance of the polarization synthesizer.

Polarization control of high order harmonics in the EUV photon energy range.

Science.gov (United States)

Vodungbo, Boris; Barszczak Sardinha, Anna; Gautier, Julien; Lambert, Guillaume; Valentin, Constance; Lozano, Magali; Iaquaniello, Grégory; Delmotte, Franck; Sebban, Stéphane; Lüning, Jan; Zeitoun, Philippe

2011-02-28

We report the generation of circularly polarized high order harmonics in the extreme ultraviolet range (18-27 nm) from a linearly polarized infrared laser (40 fs, 0.25 TW) focused into a neon filled gas cell. To circularly polarize the initially linearly polarized harmonics we have implemented a four-reflector phase-shifter. Fully circularly polarized radiation has been obtained with an efficiency of a few percents, thus being significantly more efficient than currently demonstrated direct generation of elliptically polarized harmonics. This demonstration opens up new experimental capabilities based on high order harmonics, for example, in biology and materials science. The inherent femtosecond time resolution of high order harmonic generating table top laser sources renders these an ideal tool for the investigation of ultrafast magnetization dynamics now that the magnetic circular dichroism at the absorption M-edges of transition metals can be exploited.

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

International Nuclear Information System (INIS)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A.; Orozco Hinostroza, I. E.; Escobosa Echavarría, A.

2014-01-01

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011 ¯ 0] azimuth and a superimposed diffraction along the [112 ¯ 0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm −1 and E2(high) at 488 cm −1 . Hall effect measurements showed a carrier density of 9 × 10 18  cm −3 and an electron Hall mobility of 340 cm 2 /(V s) for a film thickness of 140 nm

Dual-band high-efficiency polarization converter using an anisotropic metasurface

Science.gov (United States)

Lin, Baoqin; Wang, Buhong; Meng, Wen; Da, Xinyu; Li, Wei; Fang, Yingwu; Zhu, Zihang

2016-05-01

In this work, a dual-band and high-efficiency reflective cross-polarization converter based on an anisotropic metasurface for linearly polarized electromagnetic waves is proposed. Its unit cell is composed of an elliptical disk-ring mounted on grounded dielectric substrate, which is an anisotropic structure with a pair of mutually perpendicular symmetric axes u and v along ± 45 ° directions with respect to y-axis direction. Both the simulation and measured results show that the polarization converter can convert x- or y-polarized incident wave to its cross polarized wave in the two frequency bands (6.99-9.18 GHz, 11.66-20.40 GHz) with the conversion efficiency higher than 90%; moreover, the higher frequency band is an ultra-wide one with a relative bandwidth of 54.5% for multiple plasmon resonances. In addition, we present a detailed analysis for the polarization conversion of the polarization converter, and derive a formula to calculate the cross- and co-polarization reflections at y-polarized incidence according to the phase differences between the two reflected coefficients at u-polarized and v-polarized incidences. The simulated, calculated, and measured results are all in agreement with the entire frequency regions.

Angular dependent XPS study of surface band bending on Ga-polar n-GaN

Science.gov (United States)

Huang, Rong; Liu, Tong; Zhao, Yanfei; Zhu, Yafeng; Huang, Zengli; Li, Fangsen; Liu, Jianping; Zhang, Liqun; Zhang, Shuming; Dingsun, An; Yang, Hui

2018-05-01

Surface band bending and composition of Ga-polar n-GaN with different surface treatments were characterized by using angular dependent X-ray photoelectron spectroscopy. Upward surface band bending of varying degree was observed distinctly upon to the treatment methods. Besides the nitrogen vacancies, we found that surface states of oxygen-containing absorbates (O-H component) also contribute to the surface band bending, which lead the Fermi level pined at a level further closer to the conduction band edge on n-GaN surface. The n-GaN surface with lower surface band bending exhibits better linear electrical properties for Ti/GaN Ohmic contacts. Moreover, the density of positively charged surface states could be derived from the values of surface band bending.

High-quality AlGaN/GaN grown on sapphire by gas-source molecular beam epitaxy using a thin low-temperature AlN layer

Energy Technology Data Exchange (ETDEWEB)

Jurkovic, M.J.; Li, L.K.; Turk, B.; Wang, W.I.; Syed, S.; Simonian, D.; Stormer, H.L.

2000-07-01

Growth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gas-source molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm{sup 2}/Vs with carrier sheet densities of 6.1 x 10{sup 12} cm{sup {minus}2}, and 5.8 x 10{sup 12} cm{sup {minus}2} at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Ga- and N-polar GaN Growths on SiC Substrate

Science.gov (United States)

2018-03-15

transverse-electric-polarized emission of an AlGaN deep -ultraviolet quantum well,” Optics Express, Vol. 25, No. 22, pp. 26365-26377, 30 October 2017. 3...23, No. 25, pp. 32274-32288, 14 December 2015. 11. Yang Kuo, Wen -Yen Chang, Chun-Han Lin, C. C. Yang, and Yean-Woei Kiang, “Evaluating the blue...unlimited. 50 dielectric interlayers,” Plasmonics, Vol. 10, No. 5, pp. 1029-1040, October 2015. 14. Yang Kuo, Chia-Ying Su, Chieh Hsieh, Wen -Yen Chang

Asymptotic theorems and π-p → π0n polarization

International Nuclear Information System (INIS)

Gauron, P.

1984-09-01

The surprising results of the recent 40 GeV/c Serpukhov measurement of the polarization in π - p → π 0 n are shown to support the conjecture that hadronic amplitudes may grow as fast as they are permitted to by general principles

A high efficiency bunching system for the TUNL polarized ion source

International Nuclear Information System (INIS)

Wender, S.A.

1981-01-01

The problem of producing pulsed beams without large beam current losses has been the topic of recent interest particularly in areas where large peak currents are required. In addition, an efficient bunching system will allow the use of pulsed beams when source intensities are limited. The motivation for the development of the authors' high efficiency bunching system arose from their strong interest in neutron physics and the desire to extend their research with experiments requiring polarized neutrons. A common method for the production of polarized neutrons is to bombard a deuterium gas cell with a polarized deuteron beam. The D(→d,n) 3 He reaction has a large cross section and the outgoing neutron has a polarization of approximately 60 % in the energy range between 6 MeV to 16 Mev. Most experiments which involve the detection of neutrons use time-of-flight techniques to determine the neutron energy. An excellent way of providing time-of-flight information is to use pulsed beams. To be useful for time of flight experiments beam pulses must be on the order of a few nanoseconds wide. In addition there must be sufficient time between beam bursts to allow the reaction neutrons to travel from the target to the detector before the next beam burst arrives at the target. For reactions studied at the authors' laboratory, with their flight paths, this time is on the order of 400 ns

High contributions of sea ice derived carbon in polar bear (Ursus maritimus tissue.

Directory of Open Access Journals (Sweden)

Thomas A Brown

Full Text Available Polar bears (Ursus maritimus rely upon Arctic sea ice as a physical habitat. Consequently, conservation assessments of polar bears identify the ongoing reduction in sea ice to represent a significant threat to their survival. However, the additional role of sea ice as a potential, indirect, source of energy to bears has been overlooked. Here we used the highly branched isoprenoid lipid biomarker-based index (H-Print approach in combination with quantitative fatty acid signature analysis to show that sympagic (sea ice-associated, rather than pelagic, carbon contributions dominated the marine component of polar bear diet (72-100%; 99% CI, n = 55, irrespective of differences in diet composition. The lowest mean estimates of sympagic carbon were found in Baffin Bay bears, which were also exposed to the most rapidly increasing open water season. Therefore, our data illustrate that for future Arctic ecosystems that are likely to be characterised by reduced sea ice cover, polar bears will not only be impacted by a change in their physical habitat, but also potentially in the supply of energy to the ecosystems upon which they depend. This data represents the first quantifiable baseline that is critical for the assessment of likely ongoing changes in energy supply to Arctic predators as we move into an increasingly uncertain future for polar ecosystems.

Biogeography of photoautotrophs in the high polar biome

Directory of Open Access Journals (Sweden)

Stephen Brian Pointing

2015-09-01

Full Text Available The global latitudinal gradient in biodiversity weakens in the high polar biome and so an alternative explanation for distribution of Arctic and Antarctic photoautotrophs is required. Here we identify how temporal, microclimate and evolutionary drivers of biogeography are important, rather than the macroclimate features that drive plant diversity patterns elsewhere. High polar ecosystems are biologically unique, with a more central role for bryophytes, lichens and microbial photoautotrophs over that of vascular plants. Constraints on vascular plants arise mainly due to stature and ontogenetic barriers. Conversely non-vascular plant and microbial photoautotroph distribution is correlated with favourable microclimates and the capacity for poikilohydric dormancy. Contemporary distribution also depends on evolutionary history, with adaptive and dispersal traits as well as legacy influencing biogeography. We highlight the relevance of these findings to predicting future impacts on polar plant diversity and to the current status of plants in Arctic and Antarctic conservation policy frameworks.

Optimum measurement and analysis of small polarization asymmetry in high-energy inelastic scattering using a polarized target

International Nuclear Information System (INIS)

Niinikoski, T.O.

1976-01-01

Optimum linear filter theory is employed for maximizing the signal-to-noise ratio in measurements of small polarization asymmetry in the presence of severe counting efficiency fluctuation, most likely to occur in high-energy inclusive and inelastic scattering experiments, using a polarized target. The r.m.s. error of the polarization asymmetry is obtained in closed form, allowing numeric optimization of the operation of the target. Guidelines are given for processing the record of data. (Auth.)

Development of polarized e+ beams for future linear colliders

International Nuclear Information System (INIS)

Chiba, M.; Hamatsu, R.; Endo, A.

1995-01-01

We have so far been carrying out systematic investigations to create polarized e + on the basis of two new methods. One method is to use β + decay of radioactive nuclei with short life-time produced with a proton cyclotron and the other method is to use e + e - pair creation from polarized γ beams made through backward Compton scattering of laser lights. Here we describe technical details on productions of polarized e + and measurements of the polarization. The experiments of producing polarized e + will soon start. Although the e + intensity is not sufficiently high, we will acquire lots of know-how for further development of polarized e + sources with high quality which will possibly be applied to future linear colliders. (author)

Polarization of eigenmodes in laser diode waveguides on semipolar and nonpolar GaN

Energy Technology Data Exchange (ETDEWEB)

Rass, Jens; Vogt, Patrick [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Wernicke, Tim; Einfeldt, Sven; Weyers, Markus [Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany); Scheibenzuber, Wolfgang G.; Schwarz, Ulrich T. [Department of Physics, Regensburg University (Germany); Kupec, Jan [Integrated Systems Laboratory, ETH Zurich (Switzerland); Witzigmann, Bernd [Computational Electronics and Photonics Group, University of Kassel (Germany); Kneissl, Michael [Institute of Solid State Physics, Technische Universitaet Berlin (Germany); Ferdinand-Braun-Institut fuer Hoechstfrequenztechnik, Berlin (Germany)

2010-02-15

Recent calculations of the eigenmodes in waveguides grown on semipolar GaN suggest that the optical polarization of the emitted light as well as the optical gain depends on the orientation of the resonator. Our measurements on separate confinement heterostructures on semipolar (11 anti 22) and (10 anti 12) GaN show that for laser resonators along the semipolar [11 anti 2 anti 3 ] and [0 anti 111] directions (i.e. the projection of the c-axis onto the plane of growth) the threshold for amplified spontaneous emission is lower than for the nonpolar direction and that the stimulated emission is linearly polarized as TE mode. For the waveguide structures along the nonpolar [1 anti 100] or [11 anti 20] direction on the other hand, birefringence and anisotropy of the optical gain in the plane of growth leads not only to a higher threshold but also to a rotation of the optical polarization which is not any more TE- or TM-polarized but influenced by the ordinary and extraordinary refractive index of the material. We observe stimulated emission into a mode which is linearly polarized in extraordinarydirection nearly parallel to the c-axis. (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Ultra-high tunable liquid crystal-plasmonic photonic crystal fiber polarization filter.

Science.gov (United States)

Hameed, Mohamed Farhat O; Heikal, A M; Younis, B M; Abdelrazzak, Maher; Obayya, S S A

2015-03-23

A novel ultra-high tunable photonic crystal fiber (PCF) polarization filter is proposed and analyzed using finite element method. The suggested design has a central hole infiltrated with a nematic liquid crystal (NLC) that offers high tunability with temperature and external electric field. Moreover, the PCF is selectively filled with metal wires into cladding air holes. Results show that the resonance losses and wavelengths are different in x and y polarized directions depending on the rotation angle φ of the NLC. The reported filter of compact device length 0.5 mm can achieve 600 dB / cm resonance losses at φ = 90° for x-polarized mode at communication wavelength of 1300 mm with low losses of 0.00751 dB / cm for y-polarized mode. However, resonance losses of 157.71 dB / cm at φ = 0° can be achieved for y-polarized mode at the same wavelength with low losses of 0.092 dB / cm for x-polarized mode.

Proposed method to produce a highly polarized e+ beam for future linear colliders

International Nuclear Information System (INIS)

Okugi, Toshiyuki; Chiba, Masami; Kurihara, Yoshimasa

1996-01-01

We propose a method to produce a spin-polarized e + beam using e + e - pair-creation by circularly polarized photons. Assuming Compton scattering of an unpolarized e - beam and circularly polarized laser light, scattered γ-rays at the high end of the energy spectrum are also circularly polarized. If those γ-rays are utilized to create e ± pairs on a thin target, the spin-polarization is preserved for e + 's at the high end of their energy spectrum. By using the injector linac of Accelerator Test Facility at KEK and a commercially available Nd:YAG pulse laser, we can expect about 10 5 polarized e + 's per second with a degree of polarization of 80% and a kinetic energy of 35-80 MeV. The apparatus for creation and measurement of polarized e + 's is being constructed. We present new idea for possible application of our method to future linear colliders by utilizing a high-power CO 2 laser. (author)

Structural characterization of bulk GaN crystals grown under high hydrostatic pressure

Science.gov (United States)

Liliental-Weber, Zuzanna; Kisielowski, C.; Ruvimov, S.; Chen, Y.; Washburn, J.; Grzegory, I.; Bockowski, M.; Jun, J.; Porowski, S.

1996-09-01

This paper describes TEM characterization of bulk GaN crystals grown at 1500-1800Kin the form of plates from a solution of atomic nitrogen in liquid gallium under high nitrogen pressure (up to 20 kbars). The x-ray rocking curves for these crystals were in the range of 20-30 arc-sec. The plate thickness along the c axis was about 100 times smaller than the nonpolar growth directions. A substantial difference in material quality was observed on the opposite sides of the plates normal to the c direction. On one side the surface was atomically flat, while on the other side the surface was rough, with pyramidal features up to 100 nm high. The polarity of the crystals was determined using convergent-beam electron diffraction. The results showed that, regarding the long bond between Ga and N along the c-axis, Ga atoms were found to be closer to the flat side of the crystal, while N atoms were found to be closer to the rough side. Near the rough side, within 1/10 to 1/4 of the plate thickness, there was a high density of planar defects (stacking faults and dislocation loops decorated by Ga/void precipitates). A model explaining the defect formation is proposed.

GaN quantum dot polarity determination by X-ray photoelectron diffraction

Czech Academy of Sciences Publication Activity Database

Romanyuk, Olexandr; Bartoš, Igor; Brault, J.; De Mierry, P.; Paskova, T.; Jiříček, Petr

2016-01-01

Roč. 389, Dec (2016), s. 1156-1160 ISSN 0169-4332 R&D Projects: GA ČR GA15-01687S; GA MŠk LM2015088 Institutional support: RVO:68378271 Keywords : GaN * semipolar GaN * quantum dots * X-ray photoelectron diffraction * surface polarity Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.387, year: 2016

First measurement of the polarization observable E in the p→(γ→,π+n reaction up to 2.25 GeV

Directory of Open Access Journals (Sweden)

S. Strauch

2015-11-01

Full Text Available First results from the longitudinally polarized frozen-spin target (FROST program are reported. The double-polarization observable E, for the reaction γ→p→→π+n, has been measured using a circularly polarized tagged-photon beam, with energies from 0.35 to 2.37 GeV. The final-state pions were detected with the CEBAF Large Acceptance Spectrometer in Hall B at the Thomas Jefferson National Accelerator Facility. These polarization data agree fairly well with previous partial-wave analyses at low photon energies. Over much of the covered energy range, however, significant deviations are observed, particularly in the high-energy region where high-L multipoles contribute. The data have been included in new multipole analyses resulting in updated nucleon resonance parameters. We report updated fits from the Bonn–Gatchina, Jülich–Bonn, and SAID groups.

Porcine aminopeptidase N mediated polarized infection by porcine epidemic diarrhea virus in target cells

Energy Technology Data Exchange (ETDEWEB)

Cong, Yingying; Li, Xiaoxue; Bai, Yunyun [College of Veterinary Medicine, Northeast Agricultural University, Harbin 150030 (China); Lv, Xiaonan [College of Veterinary Medicine, Northeast Agricultural University, Harbin 150030 (China); CAS Key Lab for Biomedical Effects of Nanomaterials and Nanosafety, National Center for Nanoscience & Technology of China, Beijing 100090 (China); Herrler, Georg [Institute for Virology, University of Veterinary Medicine, Hannover D-30559 (Germany); Enjuanes, Luis [Department of Molecular and Cell Biology, Centro Nacional de Biotecnología (CNB-CSIC), Campus Universidad Autónoma de Madrid, Cantoblanco, Madrid (Spain); Zhou, Xingdong [College of Veterinary Medicine, Northeast Agricultural University, Harbin 150030 (China); Qu, Bo [Faculty of Life Sciences, Northeast Agricultural University, Harbin 150030 (China); Meng, Fandan [Institute for Virology, University of Veterinary Medicine, Hannover D-30559 (Germany); Cong, Chengcheng [College Animal Husbandry and Veterinary Medicine, Shenyang Agricultural University, Shenyang 110161 (China); Ren, Xiaofeng; Li, Guangxing [College of Veterinary Medicine, Northeast Agricultural University, Harbin 150030 (China)

2015-04-15

Infection of polarized intestinal epithelial cells by porcine epidemic diarrhea virus (PEDV) was characterized. Indirect immunofluorescence assay, real-time PCR, and transmission electron microscopy confirmed PEDV can be successfully propagated in immortalized swine small intestine epithelial cells (IECs). Infection involved porcine aminpeptidase N (pAPN), a reported cellular receptor for PEDV, transient expression of pAPN and siRNA targeted pAPN increased and decreased the infectivity of PEDV in IECs, respectively. Subsequently, polarized entry into and release from both Vero E6 and IECs was analyzed. PEDV entry into polarized cells and pAPN grown on membrane inserts occurs via apical membrane. The progeny virus released into the medium was also quantified which demonstrated that PEDV is preferentially released from the apical membrane. Collectively, our data demonstrate that pAPN, the cellular receptor for PEDV, mediates polarized PEDV infection. These results imply the possibility that PEDV infection may proceed by lateral spread of virus in intestinal epithelial cells. - Highlights: • PEDV infection of polarized intestinal epithelial cells (IECs) was characterized. • Porcine aminpeptidase N (pAPN) facilitated PEDV infection in IECs. • PEDV entry into and release from polarized cell via its apical membrane. • PEDV infection may proceed by lateral spread of virus in IECs.

Porcine aminopeptidase N mediated polarized infection by porcine epidemic diarrhea virus in target cells

International Nuclear Information System (INIS)

Cong, Yingying; Li, Xiaoxue; Bai, Yunyun; Lv, Xiaonan; Herrler, Georg; Enjuanes, Luis; Zhou, Xingdong; Qu, Bo; Meng, Fandan; Cong, Chengcheng; Ren, Xiaofeng; Li, Guangxing

2015-01-01

Infection of polarized intestinal epithelial cells by porcine epidemic diarrhea virus (PEDV) was characterized. Indirect immunofluorescence assay, real-time PCR, and transmission electron microscopy confirmed PEDV can be successfully propagated in immortalized swine small intestine epithelial cells (IECs). Infection involved porcine aminpeptidase N (pAPN), a reported cellular receptor for PEDV, transient expression of pAPN and siRNA targeted pAPN increased and decreased the infectivity of PEDV in IECs, respectively. Subsequently, polarized entry into and release from both Vero E6 and IECs was analyzed. PEDV entry into polarized cells and pAPN grown on membrane inserts occurs via apical membrane. The progeny virus released into the medium was also quantified which demonstrated that PEDV is preferentially released from the apical membrane. Collectively, our data demonstrate that pAPN, the cellular receptor for PEDV, mediates polarized PEDV infection. These results imply the possibility that PEDV infection may proceed by lateral spread of virus in intestinal epithelial cells. - Highlights: • PEDV infection of polarized intestinal epithelial cells (IECs) was characterized. • Porcine aminpeptidase N (pAPN) facilitated PEDV infection in IECs. • PEDV entry into and release from polarized cell via its apical membrane. • PEDV infection may proceed by lateral spread of virus in IECs

Passive technologies for future large-scale photonic integrated circuits on silicon: polarization handling, light non-reciprocity and loss reduction

Directory of Open Access Journals (Sweden)

Daoxin Dai

2012-03-01

Full Text Available Silicon-based large-scale photonic integrated circuits are becoming important, due to the need for higher complexity and lower cost for optical transmitters, receivers and optical buffers. In this paper, passive technologies for large-scale photonic integrated circuits are described, including polarization handling, light non-reciprocity and loss reduction. The design rule for polarization beam splitters based on asymmetrical directional couplers is summarized and several novel designs for ultra-short polarization beam splitters are reviewed. A novel concept for realizing a polarization splitter–rotator is presented with a very simple fabrication process. Realization of silicon-based light non-reciprocity devices (e.g., optical isolator, which is very important for transmitters to avoid sensitivity to reflections, is also demonstrated with the help of magneto-optical material by the bonding technology. Low-loss waveguides are another important technology for large-scale photonic integrated circuits. Ultra-low loss optical waveguides are achieved by designing a Si3N4 core with a very high aspect ratio. The loss is reduced further to <0.1 dB m−1 with an improved fabrication process incorporating a high-quality thermal oxide upper cladding by means of wafer bonding. With the developed ultra-low loss Si3N4 optical waveguides, some devices are also demonstrated, including ultra-high-Q ring resonators, low-loss arrayed-waveguide grating (demultiplexers, and high-extinction-ratio polarizers.

Direct growth of freestanding GaN on C-face SiC by HVPE.

Science.gov (United States)

Tian, Yuan; Shao, Yongliang; Wu, Yongzhong; Hao, Xiaopeng; Zhang, Lei; Dai, Yuanbin; Huo, Qin

2015-06-02

In this work, high quality GaN crystal was successfully grown on C-face 6H-SiC by HVPE using a two steps growth process. Due to the small interaction stress between the GaN and the SiC substrate, the GaN was self-separated from the SiC substrate even with a small thickness of about 100 μm. Moreover, the SiC substrate was excellent without damage after the whole process so that it can be repeatedly used in the GaN growth. Hot phosphoric acid etching (at 240 °C for 30 min) was employed to identify the polarity of the GaN layer. According to the etching results, the obtained layer was Ga-polar GaN. High-resolution X-ray diffraction (HRXRD) and electron backscatter diffraction (EBSD) were done to characterize the quality of the freestanding GaN. The Raman measurements showed that the freestanding GaN film grown on the C-face 6H-SiC was stress-free. The optical properties of the freestanding GaN layer were determined by photoluminescence (PL) spectra.

Radiative polarization in high-energy storage rings

International Nuclear Information System (INIS)

Mane, S.R.

1989-01-01

Electron and positron beams circulating in high-energy storage rings become spontaneously polarized by the emission of synchrotron radiation. The asymptotic degree of polarization that can be attained is strongly affected by so-called depolarizing resonances. Detailed experimental measurements of the polarization were made SPEAR about ten years ago, but due to lack of a suitable theory only a limited theoretical fit to the data has so far been achieved. The author presents a general formalism for calculating depolarizing resonances, which has been coded into a computer program called SMILE, and use it to fit the SPEAR data. By the use of suitable approximations, the author is able to fit both higher order and nonlinear resonances, and thereby to interpret many hitherto unexplained features in the data, and to resolve a puzzle concerning the asymmetry of certain resonance widths seen in the data. 18 refs., 2 figs

Radio polarization properties of quasars and active galaxies at high redshifts

Science.gov (United States)

Vernstrom, T.; Gaensler, B. M.; Vacca, V.; Farnes, J. S.; Haverkorn, M.; O'Sullivan, S. P.

2018-04-01

We present the largest ever sample of radio polarization properties for z > 4 sources, with 14 sources having significant polarization detections. Using wide-band data from the Karl G. Jansky Very Large Array, we obtained the rest-frame total intensity and polarization properties of 37 radio sources, nine of which have spectroscopic redshifts in the range 1 ≤ z ≤ 1.4, with the other 28 having spectroscopic redshifts in the range 3.5 ≤ z ≤ 6.21. Fits are performed for the Stokes I and fractional polarization spectra, and Faraday rotation measures are derived using rotation measure synthesis and QU fitting. Using archival data of 476 polarized sources, we compare high-redshift (z > 3) source properties to a 15 GHz rest-frame luminosity matched sample of low-redshift (z 3 sources and 57 ± 4 rad m-2 for z < 3. Although there is some indication of lower intrinsic rotation measures at high-z possibly due to higher depolarization from the high-density environments, using several statistical tests we detect no significant difference between low- and high-redshift sources. Larger samples are necessary to determine any true physical difference.

High-quality InN films on MgO (100) substrates: The key role of 30° in-plane rotation

Energy Technology Data Exchange (ETDEWEB)

Compeán García, V. D.; López Luna, E.; Rodríguez, A. G.; Vidal, M. A. [Coordinación para la Innovación y Aplicación de la Ciencia y Tecnología (CIACyT), Universidad Autónoma de San Luis Potosí (UASLP), Álvaro Obregón 64, 78000 San Luis Potosí (Mexico); Orozco Hinostroza, I. E. [Instituto Potosino de Investigación Científica y Tecnológica, Camino a la Presa San José 2055, Col. Lomas 4a Sección, 78216 San Luis Potosí (Mexico); Escobosa Echavarría, A. [Electric Engineering Department, Centro de Investigación y Estudios Avanzados del IPN, Apartado Postal 14-740, 07000 México D.F. (Mexico)

2014-05-12

High crystalline layers of InN were grown on MgO(100) substrates by gas source molecular beam epitaxy. Good quality films were obtained by means of an in-plane rotation process induced by the annealing of an InN buffer layer to minimize the misfit between InN and MgO. In situ reflection high-energy electron diffraction showed linear streaky patterns along the [011{sup ¯}0] azimuth and a superimposed diffraction along the [112{sup ¯}0] azimuth, which correspond to a 30° α-InN film rotation. This rotation reduces the mismatch at the MgO/InN interface from 19.5% to less than 3.5%, increasing the structural quality, which was analyzed by high-resolution X-ray diffraction and Raman spectroscopy. Only the (0002) c plane diffraction of α-InN was observed and was centered at 2θ = 31.4°. Raman spectroscopy showed two modes corresponding to the hexagonal phase: E1(LO) at 591 cm{sup −1} and E2(high) at 488 cm{sup −1}. Hall effect measurements showed a carrier density of 9 × 10{sup 18} cm{sup −3} and an electron Hall mobility of 340 cm{sup 2}/(V s) for a film thickness of 140 nm.

Polarization and alignment of nucleus fission fragments

International Nuclear Information System (INIS)

Barabanov, A.L.; Grechukhin, D.P.

1987-01-01

Correlation of fragment orientation with orientation axis of fissile nucleus and with n-vector f vector of fragment divergence is considered. Estimations of polarization and alignment of fission fragments of preliminarily oriented nuclei in correlation (with n-vector f recording) and integral (with n-vector f averaging) experiments were conducted. It is shown that high sensitivity of polarization and fragment alignment to the character of nucleus movement at the stage of descent from barrier to rupture point exists

X-ray diffraction study of A- plane non-polar InN epilayer grown by MOCVD

Science.gov (United States)

Moret, Matthieu; Briot, Olivier; Gil, Bernard

2015-03-01

Strong polarisation-induced electric fields in C-plane oriented nitrides semiconductor layers reduce the performance of devices. Eliminating the polarization fields can be achieved by growing nitrides along non polar direction. We have grown non polar A-plane oriented InN on R-plane (1‾102) nitridated sapphire substrate by MOCVD. We have studied the structural anisotropy observed in these layers by analyzing High Resolution XRay Diffraction rocking curve (RC) experiments as a function of the in-plane beam orientation. A-plane InN epilayer have a unique epitaxial relationship on R-Plane sapphire and show a strong structural anisotropy. Full width at half maximum (FWHM) of the InN(11‾20) XRD RC values are contained between 44 and 81 Arcmin. FWHM is smaller when the diffraction occurs along the [0001] and the largest FWHM values, of the (11‾20) RC, are obtained when the diffraction occurs along the [1‾100] in-plane direction. Atomic Force Microscopy imaging revealed morphologies with well organized crystallites. The grains are structured along a unique crystallographic orientation of InN, leading to larger domains in this direction. This structural anisotropy can be, in first approximation, attributed to the difference in the domain sizes observed. XRD reciprocal space mappings (RSM) were performed in asymmetrical configuration on (13‾40) and (2‾202) diffraction plane. RSM are measured with a beam orientation corresponding to a maximal and a minimal width of the (11‾20) Rocking curves, respectively. A simple theoretical model is exposed to interpret the RSM. We concluded that the dominant contribution to the anisotropy is due to the scattering coherence length anisotropy present in our samples.

Low-temperature growth of high quality AlN films on carbon face 6H-SiC

Energy Technology Data Exchange (ETDEWEB)

Kim, Myunghee [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Ohta, Jitsuo; Fujioka, Hiroshi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Kanagawa Academy of Science and Technology (KAST), 3-2-1 Sakado, Kawasaki 213-0012 (Japan); Kobayashi, Atsushi [Institute of Industrial Science (IIS), The University of Tokyo, 4-6-1 Komaba, Tokyo 153-8505 (Japan); Oshima, Masaharu [Department of General Systems Studies, The University of Tokyo, 3-8-1 Komaba, Meguro-ku, Tokyo 153-8902 (Japan); Department of Applied Chemistry, The University of Tokyo, 4-3-1 Hongo, Tokyo 113-8656 (Japan); Core Research for Evolutional Science and Technology (CREST), Japan Science and Technology Agency (JST), Chiyoda-ku, Tokyo 102-0075 (Japan)

2008-01-15

AlN films have been grown on atomically flat carbon face 6H-SiC (000 anti 1) substrates by pulsed laser deposition and their structural properties have been investigated. In-situ reflection high-energy electron diffraction observations have revealed that growth of AlN at 710 C proceeds in a Stranski-Krastanov mode, while typical layer-by-layer growth occurs at room temperature (RT) with atomically flat surfaces. It has been revealed that the crystalline quality of the AlN film is dramatically improved by the reduction in growth temperature down to RT and the full width at half maximum values in the X-ray rocking curves for 0004 and 10 anti 12 diffractions of the RT-grown AlN film are 0.05 and 0.07 , respectively. X-ray reciprocal space mapping has revealed that the introduction of misfit dislocations is suppressed in the case of RT growth, which is probably responsible for the improvement in crystalline quality. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer.

Science.gov (United States)

Muhammed, M M; Roldan, M A; Yamashita, Y; Sahonta, S-L; Ajia, I A; Iizuka, K; Kuramata, A; Humphreys, C J; Roqan, I S

2016-07-14

We demonstrate the high structural and optical properties of InxGa1-xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 10(7) cm(-2)) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1-xN epilayers can be achieved with high optical quality of InxGa1-xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

Spin-polarized electron tunneling across a Si delta-doped GaMnAs/n-GaAs interface

DEFF Research Database (Denmark)

Andresen, S.E.; Sørensen, B.S.; Lindelof, P.E.

2003-01-01

Spin-polarized electron coupling across a Si delta-doped GaMnAs/n-GaAs interface was investigated. The injection of spin-polarized electrons was detected as circular polarized emission from a GaInAs/GaAs quantum well light emitting diode. The angular momentum selection rules were simplified...

Dual-band and high-efficiency polarization converter based on metasurfaces at microwave frequencies

Science.gov (United States)

Liu, Yajun; Xia, Song; Shi, Hongyu; Zhang, Anxue; Xu, Zhuo

2016-06-01

We present a dual-band and high-efficiency polarization converter in microwave regime. The proposed converter can convert a linearly polarized wave to its cross-polarized wave for two distinct bands: Ku (11.5-20.0 GHz) and Ka (28.8-34.0 GHz). It can also convert the linearly polarized wave to a circularly polarized wave at four other frequencies. The experimental results are in good agreement with simulation results for both frequency bands. The polarization conversion ratio is above 0.94 for the Ku-band and 0.90 for the Ka-band. Furthermore, the converter can achieve dual-band and high-efficiency polarization conversion over angles of incidence up to 45°. The converter is also polarization-selective in that only the x- and y-polarized waves can be converted. The physical mechanism of the dual-band polarization conversion effect is interpreted via decomposed electric field components that couple with different plasmon resonance modes of the structure.

Potential applications of near infrared auto-fluorescence spectral polarized imaging for assessment of food quality

Science.gov (United States)

Zhou, Kenneth J.; Chen, Jun

2016-03-01

The current growing of food industry for low production costs and high efficiency needs for maintenance of high-quality standards and assurance of food safety while avoiding liability issues. Quality and safety of food depend on physical (texture, color, tenderness etc.), chemical (fat content, moisture, protein content, pH, etc.), and biological (total bacterial count etc.) features. There is a need for a rapid (less than a few minutes) and accurate detection system in order to optimize quality and assure safety of food. However, the fluorescence ranges for known fluorophores are limited to ultraviolet emission bands, which are not in the tissue near infrared (NIR) "optical window". Biological tissues excited by far-red or NIR light would exhibit strong emission in spectral range of 650-1,100 nm although no characteristic peaks show the emission from which known fluorophores. The characteristics of the auto-fluorescence emission of different types of tissues were found to be different between different tissue components such as fat, high quality muscle food. In this paper, NIR auto-fluorescence emission from different types of muscle food and fat was measured. The differences of fluorescence intensities of the different types of muscle food and fat emissions were observed. These can be explained by the change of the microscopic structure of physical, chemical, and biological features in meat. The difference of emission intensities of fat and lean meat tissues was applied to monitor food quality and safety using spectral polarized imaging, which can be detect deep depth fat under the muscle food up to several centimeter.

Highly polarized light emission by isotropic quantum dots integrated with magnetically aligned segmented nanowires

International Nuclear Information System (INIS)

Uran, Can; Erdem, Talha; Guzelturk, Burak; Perkgöz, Nihan Kosku; Jun, Shinae; Jang, Eunjoo; Demir, Hilmi Volkan

2014-01-01

In this work, we demonstrate a proof-of-concept system for generating highly polarized light from colloidal quantum dots (QDs) coupled with magnetically aligned segmented Au/Ni/Au nanowires (NWs). Optical characterizations reveal that the optimized QD-NW coupled structures emit highly polarized light with an s-to p-polarization (s/p) contrast as high as 15:1 corresponding to a degree of polarization of 0.88. These experimental results are supported by the finite-difference time-domain simulations, which demonstrate the interplay between the inter-NW distance and the degree of polarization.

Improved techniques for the analysis of experiments with polarized targets. [1 to 2 GeV/c, polarization

Energy Technology Data Exchange (ETDEWEB)

Barrelet, E.

1975-06-01

An experiment was performed at the Bevatron to measure the polarization in the reaction ..pi../sup -/p ..-->.. ..pi../sup 0/n from a polarized target, at beam momenta between 1 and 2 GeV/c. Concentration is placed on the original aspects of our analysis, in particular: the geometrical reconstruction of the elastic events; the use of the high analyzing power of the reaction studied to probe the polarization of the target in magnitude and distribution; a study of the statistical estimation of the polarization parameter; a detailed study of the quasielastic background. (JFP)

The polarization of fast neutrons

International Nuclear Information System (INIS)

Talov, V.V.

2000-01-01

The present work is the review of polarization of fast neutrons and methods of polarization analysis. This also includes information about polarization of fast neutrons from first papers, which described polarization in the D(d,n) 3 He, 7 Li(p,n) 7 Be, and T(p,n) 3 He reactions. (authors)

Improved Results for the H-2(d, n)(3) He Transverse Vector Polarization- Transfer Coefficient K-y(y)' (0 degrees) at Low Energies

International Nuclear Information System (INIS)

Roper, C.D.; Clegg, T.; Dunham, J.D.; Mendez, Anthony J. II; Tornow, W.; Walter, R.L.

2010-01-01

Measurements of the H-2(d, n)(3) He transverse vector polarization-transfer coefficient K-y(y)' at 0 degrees. are reported for 29 outgoing neutron energies between 3.94 and 8.47MeV. Our new results determine K-y(y)' (0 degrees) more accurately than previous data, especially for neutron energies below 5MeV. Low-energy data for this reaction are important both as a high-intensity source of highly polarized neutrons for nuclear physics studies with polarized neutron beams, and as a test of the emerging theoretical descriptions of the four-body system, where recently substantial progress has been made.

Reduction of Polarization Field Strength in Fully Strained c-Plane InGaN/(In)GaN Multiple Quantum Wells Grown by MOCVD.

Science.gov (United States)

Zhang, Feng; Ikeda, Masao; Zhang, Shu-Ming; Liu, Jian-Ping; Tian, Ai-Qin; Wen, Peng-Yan; Cheng, Yang; Yang, Hui

2016-12-01

The polarization fields in c-plane InGaN/(In)GaN multiple quantum well (MQW) structures grown on sapphire substrate by metal-organic chemical vapor deposition are investigated in this paper. The indium composition in the quantum wells varies from 14.8 to 26.5% for different samples. The photoluminescence wavelengths are calculated theoretically by fully considering the related effects and compared with the measured wavelengths. It is found that when the indium content is lower than 17.3%, the measured wavelengths agree well with the theoretical values. However, when the indium content is higher than 17.3%, the measured ones are much shorter than the calculation results. This discrepancy is attributed to the reduced polarization field in the MQWs. For the MQWs with lower indium content, 100% theoretical polarization can be maintained, while, when the indium content is higher, the polarization field decreases significantly. The polarization field can be weakened down to 23% of the theoretical value when the indium content is 26.5%. Strain relaxation is excluded as the origin of the polarization reduction because there is no sign of lattice relaxation in the structures, judging by the X-ray diffraction reciprocal space mapping. The possible causes of the polarization reduction are discussed.

Polarized high-brilliance and high-resolution soft x-ray source at ELETTRA: The performance of beamline BACH

International Nuclear Information System (INIS)

Zangrando, M.; Zacchigna, M.; Finazzi, M.; Cocco, D.; Rochow, R.; Parmigiani, F.

2004-01-01

BACH, a soft x-ray beamline for polarization-dependent experiments at the Italian synchrotron radiation facility ELETTRA, was recently completed and characterized. Its performance, in terms of energy resolution, flux and polarization, is presented. Based on two APPLE II undulators, BACH covers the energy range between 35 and 1600 eV with the control of the light polarization. The monochromator is equipped with four gratings and allows one to work either in a high resolution or in a high flux mode. After the monochromator, the beamline is split into two branches with different refocusing properties. One is optimized to exploit the performance of the soft x-ray spectrometer (ComIXS) available at the beamline. Resolving powers between 12000 at 90 eV photon energy and 6600 near 867 eV were achieved using the high-resolution gratings and the smallest available slit width (10 μm). For the high-brilliance grating, which works between 290 and 1600 eV, resolving powers between 7000 at 400 eV and 2200 at 867 eV were obtained. The flux in the experimental chamber, measured with the high-resolution gratings for linearly polarized light at the best achievable resolution, ranges between 4x10 11 photons/s at 125 eV and 2x10 10 photons/s between 900 and 1250 eV. In circularly polarized mode the flux is two times larger for energies up to 380 eV. A gain of nearly one order of magnitude is obtained for the high-brilliance grating, in accordance with theoretical predictions. Flux beyond 1.3x10 11 photons/s was measured up to 1300 eV, and thus over nearly the complete energy range covered by this high-brilliance grating, with a maximum of 1.6x10 11 photons/s between 800 and 1100 eV. First results from polarization measurements confirm a polarization above 99.7% for both linearly and circularly polarized modes at low energies. Circular dichroism experiments indicate a circular polarization beyond 90% at the Fe L 2 /L 3 edge near 720 eV

First measurement of the polarization observable E in the p → (γ → ,π+) n reaction up to 2.25 GeV

Science.gov (United States)

Strauch, S.; Briscoe, W. J.; Döring, M.; Klempt, E.; Nikonov, V. A.; Pasyuk, E.; Rönchen, D.; Sarantsev, A. V.; Strakovsky, I.; Workman, R.; Adhikari, K. P.; Adikaram, D.; Anderson, M. D.; Anefalos Pereira, S.; Anisovich, A. V.; Badui, R. A.; Ball, J.; Batourine, V.; Battaglieri, M.; Bedlinskiy, I.; Benmouna, N.; Biselli, A. S.; Brock, J.; Brooks, W. K.; Burkert, V. D.; Cao, T.; Carlin, C.; Carman, D. S.; Celentano, A.; Chandavar, S.; Charles, G.; Colaneri, L.; Cole, P. L.; Compton, N.; Contalbrigo, M.; Cortes, O.; Crede, V.; Dashyan, N.; D'Angelo, A.; De Vita, R.; De Sanctis, E.; Deur, A.; Djalali, C.; Dugger, M.; Dupre, R.; Egiyan, H.; El Alaoui, A.; El Fassi, L.; Elouadrhiri, L.; Eugenio, P.; Fedotov, G.; Fegan, S.; Filippi, A.; Fleming, J. A.; Forest, T. A.; Fradi, A.; Gevorgyan, N.; Ghandilyan, Y.; Giovanetti, K. L.; Girod, F. X.; Glazier, D. I.; Gohn, W.; Golovatch, E.; Gothe, R. W.; Griffioen, K. A.; Guidal, M.; Guo, L.; Hafidi, K.; Hakobyan, H.; Hanretty, C.; Harrison, N.; Hattawy, M.; Hicks, K.; Ho, D.; Holtrop, M.; Hughes, S. M.; Ilieva, Y.; Ireland, D. G.; Ishkhanov, B. S.; Isupov, E. L.; Jenkins, D.; Jiang, H.; Jo, H. S.; Joo, K.; Joosten, S.; Keith, C. D.; Keller, D.; Khachatryan, G.; Khandaker, M.; Kim, A.; Kim, W.; Klein, A.; Klein, F. J.; Kubarovsky, V.; Kuhn, S. E.; Lenisa, P.; Livingston, K.; Lu, H. Y.; MacGregor, I. J. D.; Markov, N.; McKinnon, B.; Meekins, D. G.; Meyer, C. A.; Mokeev, V.; Montgomery, R. A.; Moody, C. I.; Moutarde, H.; Movsisyan, A.; Munevar, E.; Munoz Camacho, C.; Nadel-Turonski, P.; Net, L. A.; Niccolai, S.; Niculescu, G.; Niculescu, I.; O'Rielly, G.; Osipenko, M.; Ostrovidov, A. I.; Park, K.; Peng, P.; Phelps, W.; Phillips, J. J.; Pisano, S.; Pogorelko, O.; Pozdniakov, S.; Price, J. W.; Procureur, S.; Prok, Y.; Protopopescu, D.; Puckett, A. J. R.; Raue, B. A.; Ripani, M.; Ritchie, B. G.; Rizzo, A.; Rosner, G.; Roy, P.; Sabatié, F.; Salgado, C.; Schott, D.; Schumacher, R. A.; Seder, E.; Seely, M. L.; Senderovich, I.; Sharabian, Y. G.; Simonyan, A.; Skorodumina, Iu.; Smith, G. D.; Sober, D. I.; Sokhan, D.; Sparveris, N.; Stoler, P.; Stepanyan, S.; Sytnik, V.; Taiuti, M.; Tian, Ye; Trivedi, A.; Tucker, R.; Ungaro, M.; Voskanyan, H.; Voutier, E.; Walford, N. K.; Watts, D. P.; Wei, X.; Wood, M. H.; Zachariou, N.; Zana, L.; Zhang, J.; Zhao, Z. W.; Zonta, I.

2015-11-01

First results from the longitudinally polarized frozen-spin target (FROST) program are reported. The double-polarization observable E, for the reaction γ → p → →π+ n, has been measured using a circularly polarized tagged-photon beam, with energies from 0.35 to 2.37 GeV. The final-state pions were detected with the CEBAF Large Acceptance Spectrometer in Hall B at the Thomas Jefferson National Accelerator Facility. These polarization data agree fairly well with previous partial-wave analyses at low photon energies. Over much of the covered energy range, however, significant deviations are observed, particularly in the high-energy region where high-L multipoles contribute. The data have been included in new multipole analyses resulting in updated nucleon resonance parameters. We report updated fits from the Bonn-Gatchina, Jülich-Bonn, and SAID groups.

Structural properties of MBE AlInN and AlGaInN barrier layers for GaN-HEMT structures

International Nuclear Information System (INIS)

Kirste, Lutz; Lim, Taek; Aidam, Rolf; Mueller, Stefan; Waltereit, Patrick; Ambacher, Oliver

2010-01-01

A high-resolution X-ray diffraction and X-ray reflectivity study of the structural properties of AlInN/GaN and AlGaInN/GaN high electron mobility transistor structures deposited by molecular beam epitaxy on metal organic chemical vapor deposition GaN/Al 2 O 3 and GaN/SiC templates is presented. A new AlN/GaN/AlN triple-interlayer is implemented to improve the interface properties between barrier layer and GaN buffer for a higher mobility of the polarization induced two-dimensional electron gas. Layer properties and structural parameters like concentration, interface quality, layer thickness, strain and crystalline perfection are analyzed. Best structural properties are achieved for an AlGaInN layer with AlN/GaN/AlN interlayer deposited on a GaN/4H-SiC (00.1) template. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Quantitative polarized Raman spectroscopy in highly turbid bone tissue.

Science.gov (United States)

Raghavan, Mekhala; Sahar, Nadder D; Wilson, Robert H; Mycek, Mary-Ann; Pleshko, Nancy; Kohn, David H; Morris, Michael D

2010-01-01

Polarized Raman spectroscopy allows measurement of molecular orientation and composition and is widely used in the study of polymer systems. Here, we extend the technique to the extraction of quantitative orientation information from bone tissue, which is optically thick and highly turbid. We discuss multiple scattering effects in tissue and show that repeated measurements using a series of objectives of differing numerical apertures can be employed to assess the contributions of sample turbidity and depth of field on polarized Raman measurements. A high numerical aperture objective minimizes the systematic errors introduced by multiple scattering. We test and validate the use of polarized Raman spectroscopy using wild-type and genetically modified (oim/oim model of osteogenesis imperfecta) murine bones. Mineral orientation distribution functions show that mineral crystallites are not as well aligned (pbones (28+/-3 deg) compared to wild-type bones (22+/-3 deg), in agreement with small-angle X-ray scattering results. In wild-type mice, backbone carbonyl orientation is 76+/-2 deg and in oim/oim mice, it is 72+/-4 deg (p>0.05). We provide evidence that simultaneous quantitative measurements of mineral and collagen orientations on intact bone specimens are possible using polarized Raman spectroscopy.

High spatial precision nano-imaging of polarization-sensitive plasmonic particles

Science.gov (United States)

Liu, Yunbo; Wang, Yipei; Lee, Somin Eunice

2018-02-01

Precise polarimetric imaging of polarization-sensitive nanoparticles is essential for resolving their accurate spatial positions beyond the diffraction limit. However, conventional technologies currently suffer from beam deviation errors which cannot be corrected beyond the diffraction limit. To overcome this issue, we experimentally demonstrate a spatially stable nano-imaging system for polarization-sensitive nanoparticles. In this study, we show that by integrating a voltage-tunable imaging variable polarizer with optical microscopy, we are able to suppress beam deviation errors. We expect that this nano-imaging system should allow for acquisition of accurate positional and polarization information from individual nanoparticles in applications where real-time, high precision spatial information is required.

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

KAUST Repository

Mumthaz Muhammed, Mufasila

2016-07-14

We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

High-quality III-nitride films on conductive, transparent (2̅01)-oriented β-Ga2O3 using a GaN buffer layer

KAUST Repository

Mumthaz Muhammed, Mufasila; Roldan, M. A.; Yamashita, Y.; Sahonta, S.-L.; Ajia, Idris A.; Iizuka, K.; Kuramata, A.; Humphreys, C. J.; Roqan, Iman S.

2016-01-01

We demonstrate the high structural and optical properties of InxGa1−xN epilayers (0 ≤ x ≤ 23) grown on conductive and transparent (01)-oriented β-Ga2O3 substrates using a low-temperature GaN buffer layer rather than AlN buffer layer, which enhances the quality and stability of the crystals compared to those grown on (100)-oriented β-Ga2O3. Raman maps show that the 2″ wafer is relaxed and uniform. Transmission electron microscopy (TEM) reveals that the dislocation density reduces considerably (~4.8 × 107 cm−2) at the grain centers. High-resolution TEM analysis demonstrates that most dislocations emerge at an angle with respect to the c-axis, whereas dislocations of the opposite phase form a loop and annihilate each other. The dislocation behavior is due to irregular (01) β-Ga2O3 surface at the interface and distorted buffer layer, followed by relaxed GaN epilayer. Photoluminescence results confirm high optical quality and time-resolved spectroscopy shows that the recombination is governed by bound excitons. We find that a low root-mean-square average (≤1.5 nm) of InxGa1−xN epilayers can be achieved with high optical quality of InxGa1−xN epilayers. We reveal that (01)-oriented β-Ga2O3 substrate has a strong potential for use in large-scale high-quality vertical light emitting device design.

Differences in mercury bioaccumulation between polar bears (Ursus maritimus) from the Canadian high- and sub-Arctic.

Science.gov (United States)

St Louis, Vincent L; Derocher, Andrew E; Stirling, Ian; Graydon, Jennifer A; Lee, Caroline; Jocksch, Erin; Richardson, Evan; Ghorpade, Sarah; Kwan, Alvin K; Kirk, Jane L; Lehnherr, Igor; Swanson, Heidi K

2011-07-15

Polar bears (Ursus maritimus) are being impacted by climate change and increased exposure to pollutants throughout their northern circumpolar range. In this study, we quantified concentrations of total mercury (THg) in the hair of polar bears from Canadian high- (southern Beaufort Sea, SBS) and sub- (western Hudson Bay, WHB) Arctic populations. Concentrations of THg in polar bears from the SBS population (14.8 ± 6.6 μg g(-1)) were significantly higher than in polar bears from WHB (4.1 ± 1.0 μg g(-1)). On the basis of δ(15)N signatures in hair, in conjunction with published δ(15)N signatures in particulate organic matter and sediments, we estimated that the pelagic and benthic food webs in the SBS are ∼ 4.7 and ∼ 4.0 trophic levels long, whereas in WHB they are only ∼ 3.6 and ∼ 3.3 trophic levels long. Furthermore, the more depleted δ(13)C ratios in hair from SBS polar bears relative to those from WHB suggests that SBS polar bears feed on food webs that are relatively more pelagic (and longer), whereas polar bears from WHB feed on those that are relatively more benthic (and shorter). Food web length and structure accounted for ∼ 67% of the variation we found in THg concentrations among all polar bears across both populations. The regional difference in polar bear hair THg concentrations was also likely due to regional differences in water-column concentrations of methyl Hg (the toxic form of Hg that biomagnifies through food webs) available for bioaccumulation at the base of the food webs. For example, concentrations of methylated Hg at mid-depths in the marine water column of the northern Canadian Arctic Archipelago were 79.8 ± 37.3 pg L(-1), whereas, in HB, they averaged only 38.3 ± 16.6 pg L(-1). We conclude that a longer food web and higher pelagic concentrations of methylated Hg available to initiate bioaccumulation in the BS resulted in higher concentrations of THg in polar bears from the SBS region compared to those inhabiting the western

Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

Science.gov (United States)

Hafiz, Shopan; Andrade, Nicolas; Monavarian, Morteza; Izyumskaya, Natalia; Das, Saikat; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

2016-02-01

Near-field scanning optical microscopy was applied to investigate the spatial variations of extended defects and their effects on the optical quality for semi-polar (1-101) and (11-22) InGaN light emitting diodes (LEDs). (1-101) and (11-22) oriented InGaN LEDs emitting at 450-470 nm were grown on patterned Si (001) 7° offcut substrates and m-sapphire substrates by means of nano-epitaxial lateral overgrowth (ELO), respectively. For (1-101) structures, the photoluminescence (PL) at 85 K from the near surface c+ wings was found to be relatively uniform and strong across the sample. However, emission from the c- wings was substantially weaker due to the presence of high density of threading dislocations (TDs) and basal plane stacking faults (BSFs) as revealed from the local PL spectra. In case of (11-22) LED structures, near-field PL intensity correlated with the surface features and the striations along the direction parallel to the c-axis projection exposed facets where the Indium content was higher as deduced from shift in the PL peak energy.

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Science.gov (United States)

Zhang, Jingzhao; Zhang, Yiou; Tse, Kinfai; Zhu, Junyi

2018-01-01

Heterostructures of wurtzite based devices have attracted great research interest because of the tremendous success of GaN in light emitting diodes (LED) industry. High-quality GaN thin films on inexpensive and lattice matched ZnO substrates are both commercially and technologically desirable. Intrinsic wetting conditions, however, forbid such heterostructures as the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces, resulting in 3D growth mode and poor crystal quality. Based on first-principles calculations, we propose the use of surfactant hydrogen to dramatically alter the growth mode of the heterostructures. Stable H-involved surface configurations and interfaces are investigated with the help of our newly developed modelling techniques. The temperature and chemical potential dependence of our proposed strategy, which is critical in experiments, is predicted by applying the experimental Gibbs free energy of H2. Our thermodynamic wetting condition analysis is a crucial step for the growth of GaN on ZnO, and we find that introducing H will not degrade the stability of ZnO substrate. This approach will allow the growth of high-quality GaN thin films on ZnO substrates. We believe that our new strategy may reduce the manufactory cost, improve the crystal quality, and improve the efficiency of GaN-based devices.

Temperature-dependent time-resolved photoluminescence measurements of (1-101)-oriented semi-polar AlGaN/GaN MQWs

Science.gov (United States)

Rosales, Daniel; Gil, Bernard; Monavarian, Morteza; Zhang, Fan; Okur, Serdal; Izyumskaya, Natalia; Avrutin, Vitaliy; Özgür, Ümit; Morkoç, Hadis

2015-03-01

We studied the temperature dependence and the recombination dynamics of the photoluminescence of (1-101)-oriented semi-polar Al0.2Ga0.8N/GaN multiple quantum wells (MQW). The polarized low-temperature PL measurements reveal that radiative recombination exhibit an anisotropic behavior. The PL intensity at room temperature is reduced by one order of magnitude with respect to low temperature. The radiative decay time exhibits a mixed behavior: it is roughly constant between 8K to ranging near 140-150K and then rapidly increases with a slope of 10 ps.K-1. This behavior is indicative of coexistence of localized excitons and free excitons which relative proportion are statistically computed.

Barrier reduction via implementation of InGaN interlayer in wafer-bonded current aperture vertical electron transistors consisting of InGaAs channel and N-polar GaN drain

International Nuclear Information System (INIS)

Kim, Jeonghee; Laurent, Matthew A.; Li, Haoran; Lal, Shalini; Mishra, Umesh K.

2015-01-01

This letter reports the influence of the added InGaN interlayer on reducing the inherent interfacial barrier and hence improving the electrical characteristics of wafer-bonded current aperture vertical electron transistors consisting of an InGaAs channel and N-polar GaN drain. The current-voltage characteristics of the transistors show that the implementation of N-polar InGaN interlayer effectively reduces the barrier to electron transport across the wafer-bonded interface most likely due to its polarization induced downward band bending, which increases the electron tunneling probability. Fully functional wafer-bonded transistors with nearly 600 mA/mm of drain current at V GS  = 0 V and L go  = 2 μm have been achieved, and thus demonstrate the feasibility of using wafer-bonded heterostructures for applications that require active carrier transport through both materials

Isolated elliptically polarized attosecond soft X-ray with high-brilliance using polarization gating of harmonics from relativistic plasmas at oblique incidence.

Science.gov (United States)

Chen, Zi-Yu; Li, Xiao-Ya; Li, Bo-Yuan; Chen, Min; Liu, Feng

2018-02-19

The production of intense isolated attosecond pulse is a major goal in ultrafast research. Recent advances in high harmonic generation from relativistic plasma mirrors under oblique incidence interactions gave rise to photon-rich attosecond pulses with circular or elliptical polarization. However, to achieve an isolated elliptical attosecond pulse via polarization gating using currently available long driving pulses remains a challenge, because polarization gating of high harmonics from relativistic plasmas is assumed only possible at normal or near-normal incidence. Here we numerically demonstrate a scheme around this problem. We show that via control of plasma dynamics by managing laser polarization, it is possible to gate an intense single attosecond pulse with high ellipticity extending to the soft X-ray regime at oblique incidence. This approach thus paves the way towards a powerful tool enabling high-time-resolution probe of dynamics of chiral systems and magnetic materials with current laser technology.

Non-sky polarization-based dehazing algorithm for non-specular objects using polarization difference and global scene feature.

Science.gov (United States)

Qu, Yufu; Zou, Zhaofan

2017-10-16

Photographic images taken in foggy or hazy weather (hazy images) exhibit poor visibility and detail because of scattering and attenuation of light caused by suspended particles, and therefore, image dehazing has attracted considerable research attention. The current polarization-based dehazing algorithms strongly rely on the presence of a "sky area", and thus, the selection of model parameters is susceptible to external interference of high-brightness objects and strong light sources. In addition, the noise of the restored image is large. In order to solve these problems, we propose a polarization-based dehazing algorithm that does not rely on the sky area ("non-sky"). First, a linear polarizer is used to collect three polarized images. The maximum- and minimum-intensity images are then obtained by calculation, assuming the polarization of light emanating from objects is negligible in most scenarios involving non-specular objects. Subsequently, the polarization difference of the two images is used to determine a sky area and calculate the infinite atmospheric light value. Next, using the global features of the image, and based on the assumption that the airlight and object radiance are irrelevant, the degree of polarization of the airlight (DPA) is calculated by solving for the optimal solution of the correlation coefficient equation between airlight and object radiance; the optimal solution is obtained by setting the right-hand side of the equation to zero. Then, the hazy image is subjected to dehazing. Subsequently, a filtering denoising algorithm, which combines the polarization difference information and block-matching and 3D (BM3D) filtering, is designed to filter the image smoothly. Our experimental results show that the proposed polarization-based dehazing algorithm does not depend on whether the image includes a sky area and does not require complex models. Moreover, the dehazing image except specular object scenarios is superior to those obtained by Tarel

Enhanced n-Doping Efficiency of a Naphthalenediimide-Based Copolymer through Polar Side Chains for Organic Thermoelectrics

KAUST Repository

Kiefer, David

2018-01-05

N-doping of conjugated polymers either requires a high dopant fraction or yields a low electrical conductivity because of their poor compatibility with molecular dopants. We explore n-doping of the polar naphthalenediimide–bithiophene copolymer p(gNDI-gT2) that carries oligoethylene glycol-based side chains and show that the polymer displays superior miscibility with the benzimidazole–dimethylbenzenamine-based n-dopant N-DMBI. The good compatibility of p(gNDI-gT2) and N-DMBI results in a relatively high doping efficiency of 13% for n-dopants, which leads to a high electrical conductivity of more than 10–1 S cm–1 for a dopant concentration of only 10 mol % when measured in an inert atmosphere. We find that the doped polymer is able to maintain its electrical conductivity for about 20 min when exposed to air and recovers rapidly when returned to a nitrogen atmosphere. Overall, solution coprocessing of p(gNDI-gT2) and N-DMBI results in a larger thermoelectric power factor of up to 0.4 μW K–2 m–1 compared to other NDI-based polymers.

High Performance Circularly Polarized Microstrip Antenna

Science.gov (United States)

Bondyopadhyay, Probir K. (Inventor)

1997-01-01

A microstrip antenna for radiating circularly polarized electromagnetic waves comprising a cluster array of at least four microstrip radiator elements, each of which is provided with dual orthogonal coplanar feeds in phase quadrature relation achieved by connection to an asymmetric T-junction power divider impedance notched at resonance. The dual fed circularly polarized reference element is positioned with its axis at a 45 deg angle with respect to the unit cell axis. The other three dual fed elements in the unit cell are positioned and fed with a coplanar feed structure with sequential rotation and phasing to enhance the axial ratio and impedance matching performance over a wide bandwidth. The centers of the radiator elements are disposed at the corners of a square with each side of a length d in the range of 0.7 to 0.9 times the free space wavelength of the antenna radiation and the radiator elements reside in a square unit cell area of sides equal to 2d and thereby permit the array to be used as a phased array antenna for electronic scanning and is realizable in a high temperature superconducting thin film material for high efficiency.

NONLINEAR REFLECTION PROCESS OF LINEARLY POLARIZED, BROADBAND ALFVÉN WAVES IN THE FAST SOLAR WIND

Energy Technology Data Exchange (ETDEWEB)

Shoda, M.; Yokoyama, T., E-mail: shoda@eps.s.u-tokyo.ac.jp [Department of Earth and Planetary Science, The University of Tokyo, Bunkyo-ku, Tokyo 113-0033 (Japan)

2016-04-01

Using one-dimensional numerical simulations, we study the elementary process of Alfvén wave reflection in a uniform medium, including nonlinear effects. In the linear regime, Alfvén wave reflection is triggered only by the inhomogeneity of the medium, whereas in the nonlinear regime, it can occur via nonlinear wave–wave interactions. Such nonlinear reflection (backscattering) is typified by decay instability. In most studies of decay instabilities, the initial condition has been a circularly polarized Alfvén wave. In this study we consider a linearly polarized Alfvén wave, which drives density fluctuations by its magnetic pressure force. For generality, we also assume a broadband wave with a red-noise spectrum. In the data analysis, we decompose the fluctuations into characteristic variables using local eigenvectors, thus revealing the behaviors of the individual modes. Different from the circular-polarization case, we find that the wave steepening produces a new energy channel from the parent Alfvén wave to the backscattered one. Such nonlinear reflection explains the observed increasing energy ratio of the sunward to the anti-sunward Alfvénic fluctuations in the solar wind with distance against the dynamical alignment effect.

Correcting systematic errors in high-sensitivity deuteron polarization measurements

Science.gov (United States)

Brantjes, N. P. M.; Dzordzhadze, V.; Gebel, R.; Gonnella, F.; Gray, F. E.; van der Hoek, D. J.; Imig, A.; Kruithof, W. L.; Lazarus, D. M.; Lehrach, A.; Lorentz, B.; Messi, R.; Moricciani, D.; Morse, W. M.; Noid, G. A.; Onderwater, C. J. G.; Özben, C. S.; Prasuhn, D.; Levi Sandri, P.; Semertzidis, Y. K.; da Silva e Silva, M.; Stephenson, E. J.; Stockhorst, H.; Venanzoni, G.; Versolato, O. O.

2012-02-01

This paper reports deuteron vector and tensor beam polarization measurements taken to investigate the systematic variations due to geometric beam misalignments and high data rates. The experiments used the In-Beam Polarimeter at the KVI-Groningen and the EDDA detector at the Cooler Synchrotron COSY at Jülich. By measuring with very high statistical precision, the contributions that are second-order in the systematic errors become apparent. By calibrating the sensitivity of the polarimeter to such errors, it becomes possible to obtain information from the raw count rate values on the size of the errors and to use this information to correct the polarization measurements. During the experiment, it was possible to demonstrate that corrections were satisfactory at the level of 10 -5 for deliberately large errors. This may facilitate the real time observation of vector polarization changes smaller than 10 -6 in a search for an electric dipole moment using a storage ring.

Correcting systematic errors in high-sensitivity deuteron polarization measurements

Energy Technology Data Exchange (ETDEWEB)

Brantjes, N.P.M. [Kernfysisch Versneller Instituut, University of Groningen, NL-9747AA Groningen (Netherlands); Dzordzhadze, V. [Brookhaven National Laboratory, Upton, NY 11973 (United States); Gebel, R. [Institut fuer Kernphysik, Juelich Center for Hadron Physics, Forschungszentrum Juelich, D-52425 Juelich (Germany); Gonnella, F. [Physica Department of ' Tor Vergata' University, Rome (Italy); INFN-Sez. ' Roma tor Vergata,' Rome (Italy); Gray, F.E. [Regis University, Denver, CO 80221 (United States); Hoek, D.J. van der [Kernfysisch Versneller Instituut, University of Groningen, NL-9747AA Groningen (Netherlands); Imig, A. [Brookhaven National Laboratory, Upton, NY 11973 (United States); Kruithof, W.L. [Kernfysisch Versneller Instituut, University of Groningen, NL-9747AA Groningen (Netherlands); Lazarus, D.M. [Brookhaven National Laboratory, Upton, NY 11973 (United States); Lehrach, A.; Lorentz, B. [Institut fuer Kernphysik, Juelich Center for Hadron Physics, Forschungszentrum Juelich, D-52425 Juelich (Germany); Messi, R. [Physica Department of ' Tor Vergata' University, Rome (Italy); INFN-Sez. ' Roma tor Vergata,' Rome (Italy); Moricciani, D. [INFN-Sez. ' Roma tor Vergata,' Rome (Italy); Morse, W.M. [Brookhaven National Laboratory, Upton, NY 11973 (United States); Noid, G.A. [Indiana University Cyclotron Facility, Bloomington, IN 47408 (United States); and others

2012-02-01

This paper reports deuteron vector and tensor beam polarization measurements taken to investigate the systematic variations due to geometric beam misalignments and high data rates. The experiments used the In-Beam Polarimeter at the KVI-Groningen and the EDDA detector at the Cooler Synchrotron COSY at Juelich. By measuring with very high statistical precision, the contributions that are second-order in the systematic errors become apparent. By calibrating the sensitivity of the polarimeter to such errors, it becomes possible to obtain information from the raw count rate values on the size of the errors and to use this information to correct the polarization measurements. During the experiment, it was possible to demonstrate that corrections were satisfactory at the level of 10{sup -5} for deliberately large errors. This may facilitate the real time observation of vector polarization changes smaller than 10{sup -6} in a search for an electric dipole moment using a storage ring.

Oocyte-specific deletion of N-WASP does not affect oocyte polarity, but causes failure of meiosis II completion.

Science.gov (United States)

Wang, Zhen-Bo; Ma, Xue-Shan; Hu, Meng-Wen; Jiang, Zong-Zhe; Meng, Tie-Gang; Dong, Ming-Zhe; Fan, Li-Hua; Ouyang, Ying-Chun; Snapper, Scott B; Schatten, Heide; Sun, Qing-Yuan

2016-09-01

There is an unexplored physiological role of N-WASP (neural Wiskott-Aldrich syndrome protein) in oocyte maturation that prevents completion of second meiosis. In mice, N-WASP deletion did not affect oocyte polarity and asymmetric meiotic division in first meiosis, but did impair midbody formation and second meiosis completion. N-WASP regulates actin dynamics and participates in various cell activities through the RHO-GTPase-Arp2/3 (actin-related protein 2/3 complex) pathway, and specifically the Cdc42 (cell division cycle 42)-N-WASP-Arp2/3 pathway. Differences in the functions of Cdc42 have been obtained from in vitro compared to in vivo studies. By conditional knockout of N-WASP in mouse oocytes, we analyzed its in vivo functions by employing a variety of different methods including oocyte culture, immunofluorescent staining and live oocyte imaging. Each experiment was repeated at least three times, and data were analyzed by paired-samples t-test. Oocyte-specific deletion of N-WASP did not affect the process of oocyte maturation including spindle formation, spindle migration, polarity establishment and maintenance, and homologous chromosome or sister chromatid segregation, but caused failure of cytokinesis completion during second meiosis (P meiosis completion and failures in this process that affect oocyte quality. None. This work was supported by the National Basic Research Program of China (No. 2012CB944404) and the National Natural Science Foundation of China (Nos 30930065, 31371451, 31272260 and 31530049). There are no potential conflicts of interests. © The Author 2016. Published by Oxford University Press on behalf of the European Society of Human Reproduction and Embryology. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Basal-plane stacking faults in non-polar GaN studied by off-axis electron holography

Energy Technology Data Exchange (ETDEWEB)

Liu, Lewis Z-Y; Rao, D V Sridhara; Kappers, M J; Humphreys, C J [Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ (United Kingdom); Geiger, D, E-mail: ZL249@cam.ac.u [Triebenberg Laboratory, Institute for Structure Physics, Technische Universitaet Dresden, D-01062 Dresden (Germany)

2010-02-01

We have studied basal-plane stacking faults in a non-polar (11-20) GaN epilayer using high-resolution electron microscopy and off-axis electron holography. The microstructure of the basal-plane stacking faults (BSFs) has been determined to be I{sub 1} type from high-resolution TEM images. High-resolution holograms along the [11-20] zone axis were obtained by off-axis electron holography on a Cs-corrected TEM, providing {approx}2 A spatial resolution in the reconstructed amplitude and phase images. Phase fluctuations across the stacking faults were detected, suggesting the presence of a built-in electric field. The uncertainties in the experiments and their interpretation are discussed.

High-efficiency broadband polarization converter based on Ω-shaped metasurface

Science.gov (United States)

Zhang, Tianyao; Huang, Lingling; Li, Xiaowei; Liu, Juan; Wang, Yongtian

2017-11-01

The polarization state, which cannot be directly detected by human eyes, forms an important characteristic of electromagnetic waves. Control of polarization states has long been pursued for various applications. Conventional polarization converters can hardly meet the requirements in lab-on-chip systems, due to the involvement of bulk materials. Here, we propose the design and realization of a linear to circular polarization converter based on metasurfaces. The metasurface is deliberately designed using achiral two-fold mirror symmetry Ω-shaped antennas. The converter integrates a ground metal plane, a spacer dielectric layer and an antenna array, leading to a high conversion efficiency and broad operating bandwidth in the near infrared regime. The calculated Stokes parameters indicate an excellent conversion of linear to circular polarization for the reflected light. The tunability of the bandwidth by oblique incidence and by modulating the thickness of the dielectric layer is also introduced and demonstrated, which shows great flexibilities for such metasurface converters. The proposed metasurface may open up intriguing possibilities towards the realization of ultrathin nanophotonic devices for polarization manipulation and wavefront engineering.

Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance.

Science.gov (United States)

Tan, Dezhi; Zhang, Wenjin; Wang, Xiaofan; Koirala, Sandhaya; Miyauchi, Yuhei; Matsuda, Kazunari

2017-08-31

Layered materials, such as graphene, transition metal dichalcogenides and black phosphorene, have been established rapidly as intriguing building blocks for optoelectronic devices. Here, we introduce highly polarization sensitive, broadband, and high-temperature-operation photodetectors based on multilayer germanium sulfide (GeS). The GeS photodetector shows a high photoresponsivity of about 6.8 × 10 3 A W -1 , an extremely high specific detectivity of 5.6 × 10 14 Jones, and broad spectral response in the wavelength range of 300-800 nm. More importantly, the GeS photodetector has high polarization sensitivity to incident linearly polarized light, which provides another degree of freedom for photodetectors. Tremendously enhanced photoresponsivity is observed with a temperature increase, and high responsivity is achievable at least up to 423 K. The establishment of larger photoinduced reduction of the Schottky barrier height will be significant for the investigation of the photoresponse mechanism of 2D layered material-based photodetectors. These attributes of high photocurrent generation in a wide temperature range, broad spectral response, and polarization sensitivity coupled with environmental stability indicate that the proposed GeS photodetector is very suitable for optoelectronic applications.

Polarized neutron capture in polarized 59Co and 165Ho nuclei

International Nuclear Information System (INIS)

Bosman, J.J.

1976-01-01

Gamma spectroscopy on the reactions 59 Co(n,γ) 60 Co and 165 Ho(n,γ) 166 Ho with polarized neutrons and polarized targets enabled the assignment of spins to 36 levels in 60 Co and 15 levels in 166 Ho. Several of them had not been reported earlier. The techniques used to polarize neutron beams and targets and the gamma-spectroscopy are extensively discussed

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Directory of Open Access Journals (Sweden)

Wang Tong

2017-07-01

Full Text Available We report the direct generation of linearly polarized single photons with a deterministic polarization axis in self-assembled quantum dots (QDs, achieved by the use of non-polar InGaN without complex device geometry engineering. Here, we present a comprehensive investigation of the polarization properties of these QDs and their origin with statistically significant experimental data and rigorous k·p modeling. The experimental study of 180 individual QDs allows us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that these QDs are highly insensitive to size differences, shape anisotropies, and material content variations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1–100] axis, with the other 9% polarized orthogonal to this direction. These features give non-polar InGaN QDs unique advantages in polarization control over other materials, such as conventional polar nitride, InAs, or CdSe QDs. Hence, the ability to generate single photons with polarization control makes non-polar InGaN QDs highly attractive for quantum cryptography protocols.

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

Science.gov (United States)

Wang, Tong; Puchtler, Tim J.; Patra, Saroj K.; Zhu, Tongtong; Ali, Muhammad; Badcock, Tom J.; Ding, Tao; Oliver, Rachel A.; Schulz, Stefan; Taylor, Robert A.

2017-07-01

We report the direct generation of linearly polarized single photons with a deterministic polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar InGaN without complex device geometry engineering. Here, we present a comprehensive investigation of the polarization properties of these QDs and their origin with statistically significant experimental data and rigorous k·p modeling. The experimental study of 180 individual QDs allows us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that these QDs are highly insensitive to size differences, shape anisotropies, and material content variations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. These features give non-polar InGaN QDs unique advantages in polarization control over other materials, such as conventional polar nitride, InAs, or CdSe QDs. Hence, the ability to generate single photons with polarization control makes non-polar InGaN QDs highly attractive for quantum cryptography protocols.

Nuclear spins, magnetic moments and quadrupole moments of Cu isotopes from N = 28 to N = 46: probes for core polarization effects

CERN Document Server

Vingerhoets, P; Avgoulea, M; Billowes, J; Bissell, M L; Blaum, K; Brown, B A; Cheal, B; De Rydt, M; Forest, D H; Geppert, Ch; Honma, M; Kowalska, M; Kramer, J; Krieger, A; Mane, E; Neugart, R; Neyens, G; Nortershauser, W; Otsuka, T; Schug, M; Stroke, H H; Tungate, G; Yordanov, D T

2010-01-01

Measurements of the ground-state nuclear spins, magnetic and quadrupole moments of the copper isotopes from 61Cu up to 75Cu are reported. The experiments were performed at the ISOLDE facility, using the technique of collinear laser spectroscopy. The trend in the magnetic moments between the N=28 and N=50 shell closures is reasonably reproduced by large-scale shell-model calculations starting from a 56Ni core. The quadrupole moments reveal a strong polarization of the underlying Ni core when the neutron shell is opened, which is however strongly reduced at N=40 due to the parity change between the $pf$ and $g$ orbits. No enhanced core polarization is seen beyond N=40. Deviations between measured and calculated moments are attributed to the softness of the 56Ni core and weakening of the Z=28 and N=28 shell gaps.

Production of polarizing Heusler crystals

Energy Technology Data Exchange (ETDEWEB)

Courtois, P. [Institut Max von Laue - Paul Langevin (ILL), 38 - Grenoble (France)

1999-11-01

Heusler crystals simultaneously produce monochromatized and polarized neutrons. However, in the past, it was difficult to produce these crystals. In collaboration with the neutron scattering group of CEA Grenoble and LLB Saclay, the production of high quality Heusler crystals has been established at ILL. (author) 3 refs., 2 figs., 1 tab.

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Science.gov (United States)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Zhang, F.; Okur, S.; Monavarian, M.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-02-01

The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells are examined in 8 K-300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.

Dresselhaus spin-orbit coupling induced spin-polarization and resonance-split in n-well semiconductor superlattices

International Nuclear Information System (INIS)

Ye Chengzhi; Xue Rui; Nie, Y.-H.; Liang, J.-Q.

2009-01-01

Using the transfer matrix method, we investigate the electron transmission over multiple-well semiconductor superlattices with Dresselhaus spin-orbit coupling in the potential-well regions. The superlattice structure enhances the effect of spin polarization in the transmission spectrum. The minibands of multiple-well superlattices for electrons with different spin can be completely separated at the low incident energy, leading to the 100% spin polarization in a broad energy windows, which may be an effective scheme for realizing spin filtering. Moreover, for the transmission over n-quantum-well, it is observed that the resonance peaks in the minibands split into n-folds or (n-1)-folds depending on the well-width and barrier-thickness, which is different from the case of tunneling through n-barrier structure

System of measurement of proton polarization in a polarized target

Energy Technology Data Exchange (ETDEWEB)

Karnaukov, I.M.; Chechetenko, V.F.; Lukhanin, A.A.; Telegin, Y.N.; Trotsenko, V.I.

1985-05-01

This paper describes a nuclear magnetic resonance spectrometer with high sensitivity. The signal of NMR absorption is recorded by a Q-meter with a series circuit and a circuit for compensation of the resonance characteristic of the measuring circuit. In order to ensure uniform sensitivity of the system to the state of polarization throughout the volume of the target and to enhance the S/N ration the measuring coil is made of a flat conductor. The polarization-measuring system works on-line with an M-6000 computer. The total error of measurement of the polarization of free protons in a target with allowance for the error due to local depolarization of free protons in a target with allowance for the error due to local depolarization of the working substance under irradiation with an intense photon beam is less than or equal to 6%.

Study of polarization phenomena in n-type CdZnTe

Czech Academy of Sciences Publication Activity Database

Elhadidy, Hassan; Dědic, V.; Franc, J.; Grill, R.

2014-01-01

Roč. 47, č. 5 (2014), Art. number 055104 ISSN 0022-3727 R&D Projects: GA MŠk(CZ) ED1.1.00/02.0068; GA MŠk(CZ) EE2.3.20.0214 Institutional support: RVO:68081723 Keywords : n-type CZT * polarization * electron de-trapping * Pockels effect Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 2.721, year: 2014

High quality TbMnO3 films deposited on YAlO3

International Nuclear Information System (INIS)

Glavic, Artur; Voigt, Joerg; Persson, Joerg; Su, Yixi; Schubert, Juergen; Groot, Joost de; Zande, Willi; Brueckel, Thomas

2011-01-01

Research highlights: → We found a good substrate and suitable deposition parameters to create untwinned, epitaxial thin films of TbMnO 3 . → Laboratory experiments prove the crystalline quality of the films. → We were able to measure the micro magnetic structure in the films by polarized neutron diffraction (to our knowledge the first neutron investigations on TbMnO 3 thin films). - Abstract: High quality thin films of TbMnO 3 were grown by pulsed laser deposition on orthorhombicYAlO 3 (1 0 0). The interface and surface roughness of a 55 nm thick film were probed by X-ray reflectometry and atomic force microscopy, yielding a roughness of 1 nm. X-ray diffraction revealed untwinned films and a small mosaic spread of 0.04 o and 0.2 o for out-of-plane and in-plane reflections, respectively. This high degree of epitaxy was also confirmed by Rutherford backscattering spectrometry. Using polarized neutron diffraction we could identify a magnetic structure with the propagation vector (0 0.27 0), identical to the bulk magnetic structure of TbMnO 3 .

Experimental investigation of the effect of the laser beam polarization state on the quality of steel sheet cutting

Science.gov (United States)

Golyshev, A. A.; Orishich, A. M.; Shulyatyev, V. B.

2017-10-01

The paper presents the results of experimental investigation of the effect of the beam polarization on the quality of the oxygen-assisted laser cutting of steel by a CO2-laser. Under consideration is the effect of the laser cutting parameters by the beam with the linear polarization on the cut surface roughness. It is founded that the minimal roughness is reached when the electric field vector is perpendicular to the cutting speed vector. It is concluded that the absorbed power distribution imposes the essential influence on the surface quality, and that the radiation heating of side walls is important to have lower roughness. Obtained results enabled to present probable reasons of the worse surface quality of the metals cut by a fiber laser than the ones cut by a CO2-laser.

High magnetic field uniformity superconducting magnet for a movable polarized target

International Nuclear Information System (INIS)

Anishchenko, N.G.; Bartenev, V.D.; Blinov, N.A.

1998-01-01

The superconducting polarizing magnet was constructed for movable polarized target (MPT) with working volume 200 mm long and 30 mm in diameter. The magnet provides a polarizing magnetic field up to 6 T with the uniformity of 4.5 x 10 -4 in the working volume of the target. The magnet windings are made of a NbTi wire, impregnated with the epoxy resin and placed in the horizontal cryostat with 'warm' aperture diameter of 96 mm. The design and technology of the magnet winding are described. Results of the magnetic field map measurements using a NMR-magnetometer are given. The MPT set-up is installed in the beam line of polarized neutrons produced by break-up of polarized deuterons extracted from the Synchrophasotron of the Laboratory of High Energies (LHE), JINR, Dubna

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

Directory of Open Access Journals (Sweden)

Xinke Liu

2017-09-01

Full Text Available This paper reported AlGaN/GaN high electron mobility transistors (HEMTs with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD on free-standing GaN, small full-width hall maximum (FWHM of 42.9 arcsec for (0002 GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2 were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade, low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.

High-x sub T single-spin asymmetry in. pi. sup 0 and. eta. production at x sub F =0 by 200 GeV polarized antiprotons and protons

Energy Technology Data Exchange (ETDEWEB)

Adams, D L; Akchurin, N; Belikov, N I; Bystricky, J; Corcoran, M D; Cossairt, J D; Cranshaw, J; Derevschikov, A A; En' yo, H; Funahashi, H; Goto, Y; Grachov, O A; Grosnick, D P; Hill, D A; Imai, K; Itow, Y; Iwatani, K; Krueger, K W; Kuroda, K; Laghai, M; Lehar, F; Lesquen, A de; Lopiano, D; Luehring, F C; Maki, T; Makino, S; Masaike, A; Matulenko, Yu A; Meschanin, A P; Michalowicz, A; Miller, D H; Miyake, K; Nagamine, T; Nessi-Tedaldi, F; Nessi, M; Nguyen, C; Nurushev, S B; Ohashi, Y; Onel, Y; Patalakha, D I; Pauletta, G; Penzo, A; Read, A L; Roberts, J B; Van Rossum, L; Rykov, V L; Saito, N; Salvato, G; Schiavon, P; Skeens, J; Solovyanov, V L; Spinka, H; Takashima, R; Takeutchi, F; Tamura, N; Tanaka, N; Underwood, D G; Vasiliev, A N; Villari, A; White, J L; Yamashita, S; Yokosawa, A; Yoshida, T; Zanetti, A [T.W. Bonner Nuclear Lab., Rice Univ., Houston, TX (United States) Dept. of Physics, Univ. Iowa, Iowa City, IA (Unite; FNAL E704 Collaboration

1992-02-20

A measurement of the single-spin asymmetry A{sub N} in p{up arrow}+p{yields}{pi}{sup 0}+X at 200 GeV with x{sub F}=0 shows a transition in the production process from a 'low-x{sub T}' regime with A{sub N}=0, through an intermediate region of negative asymmetry, to a 'high-x{sub T}' regime with A{sub N}>0.3. This transition occurs at x{sub T}{approx equal}0.4 and is consistent with x{sub T}-scaling of A{sub N} in pion production using polarized beams or targets from {radical}-s=5.2 to 19.4 GeV. Results for A{sub N} in {eta} production by polarized protons and in {pi}{sup 0} production by polarized antiprotons are also presented. (orig.).

High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

Science.gov (United States)

Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

2018-05-01

High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

Electron spin polarization in high-energy storage rings

International Nuclear Information System (INIS)

Mane, S.R.

1987-01-01

In a high energy storage ring, a single photon emission has relatively little effect on the orbital motion, but it can produce a relatively large change in the electron spin state. Hence the unperturbed orbital motion can be satisfactorily described using classical mechanics, but the spin must be treated quantum mechanically. The electron motion is therefore treated semi-classically in this thesis. It is explained how to diagonalize the unperturbed Hamiltonian to the leading order in Planck's constant. The effects of perturbations are then included, and the relevant time-scales and ensemble averages are elucidated. The Derbenev-Kondratenko formula for the equilibrium degree of polarization is rederived. Mathematical details of the rederivation are given. Since the original authors used a different formalism, a proof is offered of the equivalence between their method and the one used in this thesis. An algorithm is also presented to evaluate the equilibrium polarization. It has a number of new features, which enable the polarization to be calculated to a higher degree of approximation than has hitherto been possible. This facilitates the calculation of so-called spin resonances, which are points at which the polarization almost vanishes. A computer program has been written to implement the above algorithm, in the approximation of linear orbital dynamics, and sample results are presented

High-Efficiency Dielectric Metasurfaces for Polarization-Dependent Terahertz Wavefront Manipulation

KAUST Repository

Zhang, Huifang

2017-11-30

Recently, metasurfaces made up of dielectric structures have drawn enormous attentions in the optical and infrared regimes due to their high efficiency and designing freedom in manipulating light propagation. Such advantages can also be introduced to terahertz frequencies where efficient functional devices are still lacking. Here, polarization-dependent all-silicon terahertz dielectric metasurfaces are proposed and experimentally demonstrated. The metasurfaces are composed of anisotropic rectangular-shaped silicon pillars on silicon substrate. Each metasurface holds dual different functions depending on the incident polarizations. Furthermore, to suppress the reflection loss and multireflection effect in practical applications, a high-performance polarization-independent antireflection silicon pillar array is also proposed, which can be patterned at the other side of the silicon substrate. Such all-silicon dielectric metasurfaces are easy to fabricate and can be very promising in developing next-generation efficient, compact, and low-cost terahertz functional devices.

Influence of the channel electric field distribution on the polarization Coulomb field scattering in In0.18Al0.82N/AlN/GaN heterostructure field-effect transistors

International Nuclear Information System (INIS)

Yu Ying-Xia; Lin Zhao-Jun; Luan Chong-Biao; Yang Ming; Wang Yu-Tang; Lü Yuan-Jie; Feng Zhi-Hong

2014-01-01

By making use of the quasi-two-dimensional (quasi-2D) model, the current–voltage (I–V) characteristics of In 0.18 Al 0.82 N/AlN/GaN heterostructure field-effect transistors (HFETs) with different gate lengths are simulated based on the measured capacitance–voltage (C–V) characteristics and I–V characteristics. By analyzing the variation of the electron mobility for the two-dimensional electron gas (2DEG) with electric field, it is found that the different polarization charge distributions generated by the different channel electric field distributions can result in different polarization Coulomb field scatterings. The difference between the electron mobilities primarily caused by the polarization Coulomb field scatterings can reach up to 1522.9 cm 2 /V·s for the prepared In 0.18 Al 0.82 N/AlN/GaN HFETs. In addition, when the 2DEG sheet density is modulated by the drain–source bias, the electron mobility presents a peak with the variation of the 2DEG sheet density, the gate length is smaller, and the 2DEG sheet density corresponding to the peak point is higher. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Neutron polarization measurements using the pulsed-polarized proton and deuteron beams at TUNL

International Nuclear Information System (INIS)

Walter, R.L.

1981-01-01

Nanosecond wide pulses of polarized protons or deuterons at a repetition rate of 4 MHz are now routinely available for studying interactions involving outgoing neutrons. Up to 90 nA of protons and 200 nA of deuterons have been observed on target. The authors' first experiments involved the determination of the analyzing power A /SUB y/ (UJ) for a few (→p,n) and (→d,n) reactions using conventional neutron time-of-flight detection. A major program for observing polarization effects in neutron elastic scattering has been initiated. The source of polarized neutrons for this program is the 2 H(→d,n→) 3 He reaction which yields a neutron beam having 90% of the polarization of the incident deuterons

Research status of large mode area single polarization active fiber

Science.gov (United States)

Xiao, Chun; Zhang, Ge; Yang, Bin-hua; Cheng, Wei-feng; Gu, Shao-yi

2018-03-01

As high power fiber laser used more and more widely, to increase the output power of fiber laser and beam quality improvement have become an important goal for the development of high power fiber lasers. The use of large mode fiber is the most direct and effective way to solve the nonlinear effect and fiber damage in the fiber laser power lifting process. In order to reduce the effect of polarization of the fiber laser system, the study found that when introduces a birefringence in the single-mode fiber, the polarization state changes caused by the birefringence is far greater than the random polarization state changes, then the external disturbance is completely submerged, finally the polarization can be controlled and stabilized. Through the fine design of the fiber structure, if the birefringence is high enough to achieve the separation of the two polarization states, the fiber will have a different cut-off mechanism to eliminate polarization which is not need, which will realize single mode single polarization transmission in a band. In this paper, different types of single polarization fiber design are presented and the application of these fibers are also discussed.

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

Energy Technology Data Exchange (ETDEWEB)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B. [CNRS, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Université Montpellier 2, Laboratoire Charles Coulomb, UMR 5221, F-34095 Montpellier (France); Zhang, F.; Okur, S.; Monavarian, M.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H. [Department of Electrical and Computer Engineering, Virginia Commonwealth University, Richmond, Virginia 23238 (United States); Leach, J. H. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

2014-02-21

The optical properties of GaN/Al{sub 0.15}Ga{sub 0.85}N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells.

Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells

International Nuclear Information System (INIS)

Rosales, D.; Gil, B.; Bretagnon, T.; Guizal, B.; Zhang, F.; Okur, S.; Monavarian, M.; Izyumskaya, N.; Avrutin, V.; Özgür, Ü.; Morkoç, H.; Leach, J. H.

2014-01-01

The optical properties of GaN/Al 0.15 Ga 0.85 N multiple quantum wells are examined in 8 K–300 K temperature range. Both polarized CW and time resolved temperature-dependent photoluminescence experiment are performed so that we can deduce the relative contributions of the non-radiative and radiative recombination processes. From the calculation of the proportion of the excitonic population having wave vector in the light cone, we can deduce the variation of the radiative decay time with temperature. We find part of the excitonic population to be localized in concert with the report of Corfdir et al. (Jpn. J. Appl. Phys., Part 2 52, 08JC01 (2013)) in case of a-plane quantum wells

PolarTrack: Optical Outside-In Device Tracking that Exploits Display Polarization

DEFF Research Database (Denmark)

Rädle, Roman; Jetter, Hans-Christian; Fischer, Jonathan

2018-01-01

PolarTrack is a novel camera-based approach to detecting and tracking mobile devices inside the capture volume. In PolarTrack, a polarization filter continuously rotates in front of an off-the-shelf color camera, which causes the displays of observed devices to periodically blink in the camera feed....... The periodic blinking results from the physical characteristics of current displays, which shine polarized light either through an LC overlay to produce images or through a polarizer to reduce light reflections on OLED displays. PolarTrack runs a simple detection algorithm on the camera feed to segment...... displays and track their locations and orientations, which makes PolarTrack particularly suitable as a tracking system for cross-device interaction with mobile devices. Our evaluation of PolarTrack's tracking quality and comparison with state-of-the-art camera-based multi-device tracking showed a better...

Effects of polarization on intersubband transitions of AlxGa1−xN/GaN multi-quantum wells

International Nuclear Information System (INIS)

Tian Wu; Yan Wei-Yi; Xiong Hui; Dai Jian-Nan; Fang Yan-Yan; Wu Zhi-Hao; Chen Chang-Qin; Yu Chen-Hui

2013-01-01

The effects of polarization and related structural parameters on the intersubband transitions of AlGaN/GaN multi-quantum wells (MQWs) have been investigated by solving the Schrödinger and the Poisson equations self-consistently. The results show that the intersubband absorption coefficient increases with increasing polarization while the transition wavelength decreases, which is not identical to the case of the interband transitions. Moreover, it suggests that the well width has a greater effect on the intersubband transitions than the barrier thickness, and the intersubband transition wavelength of the structure when doped in the barrier is shorter than that when doped in the well. It is found that the influences of the structural parameters differ for different electron subbands. The mechanisms responsible for these effects have been investigated in detail. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Manipulation of dielectric Rayleigh particles using highly focused elliptically polarized vector fields.

Science.gov (United States)

Gu, Bing; Xu, Danfeng; Rui, Guanghao; Lian, Meng; Cui, Yiping; Zhan, Qiwen

2015-09-20

Generation of vectorial optical fields with arbitrary polarization distribution is of great interest in areas where exotic optical fields are desired. In this work, we experimentally demonstrate the versatile generation of linearly polarized vector fields, elliptically polarized vector fields, and circularly polarized vortex beams through introducing attenuators in a common-path interferometer. By means of Richards-Wolf vectorial diffraction method, the characteristics of the highly focused elliptically polarized vector fields are studied. The optical force and torque on a dielectric Rayleigh particle produced by these tightly focused vector fields are calculated and exploited for the stable trapping of dielectric Rayleigh particles. It is shown that the additional degree of freedom provided by the elliptically polarized vector field allows one to control the spatial structure of polarization, to engineer the focusing field, and to tailor the optical force and torque on a dielectric Rayleigh particle.

Fatty acid composition of commercial vegetable oils from the French market analysed using a long highly polar column

Directory of Open Access Journals (Sweden)

Vingering Nathalie

2010-05-01

Full Text Available The increasing concern for consumed fat by western populations has raised the question of the level and the quality of fat intake, especially the composition of fatty acids (FA and their impact on human health. As a consequence, consumers and nutritionists have requested updated publications on FA composition of food containing fat. In the present study, fourteen different kinds of edible oils (rapeseed, olive, hazelnut, argan, groundnut, grape seed, sesame, sunflower, walnut and organic walnut, avocado, wheat germ, and two combined oils were analysed for FA determination using a BPX-70 60 m highly polar GC column. Oils were classified according to the classification of Dubois et al. (2007, 2008. Monounsaturated FA (MUFA group oils, including rapeseed, olive, hazelnut, and avocado oils, contained mainly oleic acid (OA. Groundnut and argan oils, also rich in MUFA, showed in addition high linoleic acid (LA contents. In the polyunsaturated (PUFA group, grape seed oil presented the highest LA content while sunflower, sesame, and wheat germ oils showed noticeable MUFA amounts in addition to high PUFA contents. Walnut oils, also rich in LA, showed the highest linolenic acid (ALA content. The n-6/n-3 ratio of each oil was calculated. Trans-FA (TFA was also detected and quantified. Results were compared with the data published during the past decade, and the slight discrepancies were attributed to differences in origin and variety of seed-cultivars, and in seed and oil processes.

High bacterial diversity of biological soil crusts in water tracks over permafrost in the high arctic polar desert.

Science.gov (United States)

Steven, Blaire; Lionard, Marie; Kuske, Cheryl R; Vincent, Warwick F

2013-01-01

In this study we report the bacterial diversity of biological soil crusts (biocrusts) inhabiting polar desert soils at the northern land limit of the Arctic polar region (83° 05 N). Employing pyrosequencing of bacterial 16S rRNA genes this study demonstrated that these biocrusts harbor diverse bacterial communities, often as diverse as temperate latitude communities. The effect of wetting pulses on the composition of communities was also determined by collecting samples from soils outside and inside of permafrost water tracks, hill slope flow paths that drain permafrost-affected soils. The intermittent flow regime in the water tracks was correlated with altered relative abundance of phylum level taxonomic bins in the bacterial communities, but the alterations varied between individual sampling sites. Bacteria related to the Cyanobacteria and Acidobacteria demonstrated shifts in relative abundance based on their location either inside or outside of the water tracks. Among cyanobacterial sequences, the proportion of sequences belonging to the family Oscillatoriales consistently increased in relative abundance in the samples from inside the water tracks compared to those outside. Acidobacteria showed responses to wetting pulses in the water tracks, increasing in abundance at one site and decreasing at the other two sites. Subdivision 4 acidobacterial sequences tended to follow the trends in the total Acidobacteria relative abundance, suggesting these organisms were largely responsible for the changes observed in the Acidobacteria. Taken together, these data suggest that the bacterial communities of these high latitude polar biocrusts are diverse but do not show a consensus response to intermittent flow in water tracks over high Arctic permafrost.

Spatially and spectrally resolved photoluminescence of InGaN MQWs grown on highly Si doped a-plane GaN buffer

Energy Technology Data Exchange (ETDEWEB)

Thunert, Martin; Wieneke, Matthias; Dempewolf, Anja; Bertram, Frank; Dadgar, Armin; Krost, Alois; Christen, Juergen [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany)

2011-07-01

A set of InGaN multi quantum well (MQW) samples grown by MOVPE on highly Si doped a-plane GaN on r-plane sapphire templates has been investigated using spatially resolved photoluminescence spectroscopy ({mu}-PL). The Si doping level of nominal about 10{sup 20} cm{sup -3} leads to three dimensionally grown crystallites mostly terminated by m-facets. The MQW thickness has been systematically varied from nominally 2.1 to 4.2 nm, as well as the InGaN growth temperature, which was varied from 760 C to 700 C. The growth of a-plane GaN based devices leads to a non-polar growth direction avoiding the polarization field affected Quantum-Confined-Stark-Effect. Spatially resolved PL studies show for all samples low near band edge (NBE) GaN emission intensity over the whole area under investigation accompanied by highly intense InGaN MQW emission for single crystallites. The MQW luminescence shows a systematic blueshift with increasing InGaN growth temperature due to lower In incorporation as well as a systematic redshift with increasing MQW thickness. Excitation power dependent spectra at 4 K as well as temperature dependent PL spectra will be presented.

n3 PUFAs reduce mouse CD4+ T-cell ex vivo polarization into Th17 cells.

Science.gov (United States)

Monk, Jennifer M; Hou, Tim Y; Turk, Harmony F; McMurray, David N; Chapkin, Robert S

2013-09-01

Little is known about the impact of n3 (ω3) PUFAs on polarization of CD4(+) T cells into effector subsets other than Th1 and Th2. We assessed the effects of dietary fat [corn oil (CO) vs. fish oil (FO)] and fermentable fiber [cellulose (C) vs. pectin (P)] (2 × 2 design) in male C57BL/6 mice fed CO-C, CO-P, FO-C, or FO-P diets for 3 wk on the ex vivo polarization of purified splenic CD4(+) T cells (using magnetic microbeads) into regulatory T cells [Tregs; forkhead box P3 (Foxp3(+)) cells] or Th17 cells [interleukin (IL)-17A(+) and retinoic acid receptor-related orphan receptor (ROR) γτ(+) cells] by flow cytometry. Treg polarization was unaffected by diet; however, FO independently reduced the percentage of both CD4(+) IL-17A(+) (P diets enriched in eicosapentaenoic acid (EPA), docosahexaenoic acid (DHA), or DHA + EPA similarly reduced Th17-cell polarization in comparison to CO by reducing expression of the Th17-cell signature cytokine (IL-17A; P = 0.0015) and transcription factor (RORγτ P = 0.02), whereas Treg polarization was unaffected. Collectively, these data show that n3 PUFAs exert a direct effect on the development of Th17 cells in healthy mice, implicating a novel n3 PUFA-dependent, anti-inflammatory mechanism of action via the suppression of the initial development of this inflammatory T-cell subset.

Silicon photonic transceiver circuit for high-speed polarization-based discrete variable quantum key distribution.

Science.gov (United States)

Cai, Hong; Long, Christopher M; DeRose, Christopher T; Boynton, Nicholas; Urayama, Junji; Camacho, Ryan; Pomerene, Andrew; Starbuck, Andrew L; Trotter, Douglas C; Davids, Paul S; Lentine, Anthony L

2017-05-29

We demonstrate a silicon photonic transceiver circuit for high-speed discrete variable quantum key distribution that employs a common structure for transmit and receive functions. The device is intended for use in polarization-based quantum cryptographic protocols, such as BB84. Our characterization indicates that the circuit can generate the four BB84 states (TE/TM/45°/135° linear polarizations) with >30 dB polarization extinction ratios and gigabit per second modulation speed, and is capable of decoding any polarization bases differing by 90° with high extinction ratios.

Fusion with highly spin polarized HD and D2

International Nuclear Information System (INIS)

Honig, A.; Letzring, S.; Skupsky, S.

1993-01-01

The experimental efforts over the past 5 years have been aimed at carrying out ICF shots with spin-polarized D fuel. The authors successfully prepared polarized D in HD, and solved the problems of loading target shells with their carefully prepared isotopic mixtures, polarizing them so that the D polarization remains metastably frozen-in for about half a day, and carrying out the various cold transfer requirements at Syracuse, where the target is prepared, and at Rochester, where the cold target is inserted into the OMEGA fusion chamber. A principal concern during this past year was overcoming difficulties encountered in maintaining the integrity of the fragile cold target during the multitude of cold-transfers required for the experiment. These difficulties arose from insufficient rigidity of the cold transfer systems, which were constrained to be of small diameter by the narrow central access bore of the dilution refrigerator, and were exacerbated by the multitude of required target shell manipulations between different environments, each with different coupling geometry, including target shell permeation, polarization, storage, transport, retrieval and insertion into OMEGA. The authors did solve all of these problems, and were able to position a cold, high density but unpolarized target with required precision in OMEGA. Upon shooting the accurately positioned unpolarized high density cold target, no neutron yield was observed. Inspection inside the OMEGA tank after the shot indicated the absence of neutron yield was due to mal-timing or insufficient retraction rate of OMEGA's fast shroud mechanism, resulting in interception of at least 20 of the 24 laser beams by the faulty shroud. In spite of this, all elements of the complex experiment the authors originally undertook have been successfully demonstrated, and the cold retrieval concepts and methods they developed are being utilized on the ICF upgrades at Rochester and at Livermore

Polarization-Independent Wideband High-Index-Contrast Grating Mirror

DEFF Research Database (Denmark)

Bekele, Dagmawi Alemayehu; Park, Gyeong Cheol; Malureanu, Radu

2015-01-01

Island-type two-dimensional high-index-contrast grating mirror based on a standard silicon-on-insulator wafer have been experimentally demonstrated. The measured spectra shows a bandwidth of ∼192 nm with a reflectivity over 99% as well as polarization independence. Numerical simulations show...

TNF-α decreases VEGF secretion in highly polarized RPE cells but increases it in non-polarized RPE cells related to crosstalk between JNK and NF-κB pathways.

Directory of Open Access Journals (Sweden)

Hiroto Terasaki

Full Text Available Asymmetrical secretion of vascular endothelial growth factor (VEGF by retinal pigment epithelial (RPE cells in situ is critical for maintaining the homeostasis of the retina and choroid. VEGF is also involved in the development and progression of age-related macular degeneration (AMD. We studied the effect of tumor necrosis factor-α (TNF-α on the secretion of VEGF in polarized and non-polarized RPE cells (P-RPE cells and N-RPE cells, respectively in culture and in situ in rats. A subretinal injection of TNF-α caused a decrease in VEGF expression and choroidal atrophy. Porcine RPE cells were seeded on Transwell™ filters, and their maturation and polarization were confirmed by the asymmetrical VEGF secretion and trans electrical resistance. Exposure to TNF-α decreased the VEGF secretion in P-RPE cells but increased it in N-RPE cells in culture. TNF-α inactivated JNK in P-RPE cells but activated it in N-RPE cells, and TNF-α activated NF-κB in P-RPE cells but not in N-RPE cells. Inhibition of NF-κB activated JNK in both types of RPE cells indicating crosstalk between JNK and NF-κB. TNF-α induced the inhibitory effects of NF-κB on JNK in P-RPE cells because NF-κB is continuously inactivated. In N-RPE cells, however, it was not evident because NF-κB was already activated. The basic activation pattern of JNK and NF-κB and their crosstalk led to opposing responses of RPE cells to TNF-α. These results suggest that VEGF secretion under inflammatory conditions depends on cellular polarization, and the TNF-α-induced VEGF down-regulation may result in choroidal atrophy in polarized physiological RPE cells. TNF-α-induced VEGF up-regulation may cause neovascularization by non-polarized or non-physiological RPE cells.

One photon exchange processes and the calibration of polarization of high energy protons

International Nuclear Information System (INIS)

Margolis, B.; Thomas, G.H.

1978-01-01

Polarization phenomena in small momentum transfer high energy one-photon exchange processes in the reaction p + A → X + A where A is a complex nucleus and X is anything are examined. It is shown that these polarizations can be related directly to photoproduction polarization effects in the reaction γ + p → X at low energies. Explicit formulae are written for polarization effects in the case where X → π 0 + p

Neutron angular distribution in (γ, n reactions with linearly polarized γ-ray beam generated by laser Compton scattering

Directory of Open Access Journals (Sweden)

K. Horikawa

2014-10-01

Full Text Available In 1957, Agodi predicted that the neutron angular distribution in (γ, n reactions with a 100% linearly polarized γ-ray beam for dipole excitation should be anisotropic and universally described by the simple function of a+b⋅cos⁡(2ϕ at the polar angle θ=90°, where ϕ is the azimuthal angle. However, this prediction has not been experimentally confirmed in over half a century. We have verified experimentally this angular distribution in the (γ, n reaction for 197Au, 127I, and natural Cu targets using linearly polarized laser Compton scattering γ-rays. The result suggests that the (γ→, n reaction is a novel tool to study nuclear physics in the giant dipole resonance region.

Scattering of polarized electrons from polarized targets: Coincidence reactions and prescriptions for polarized half-off-shell single-nucleon cross sections

International Nuclear Information System (INIS)

Caballero, J.A.; Massachusetts Inst. of Tech., Cambridge, MA; Donnelly, T.W.; Massachusetts Inst. of Tech., Cambridge, MA; Poulis, G.I.; Massachusetts Inst. of Tech., Cambridge, MA

1993-01-01

Coincidence reactions of the type vector A( vector e, e'N)B involving the scattering of polarized electrons from polarized targets are discussed within the context of the plane-wave impulse approximation. Prescriptions are developed for polarized half-off single-nucleon cross sections; the different prescriptions are compared for typical quasi-free kinematics. Illustrative results are presented for coincidence polarized electron scattering from typical polarized nuclei. (orig.)

High-field Overhauser dynamic nuclear polarization in silicon below the metal-insulator transition.

Science.gov (United States)

Dementyev, Anatoly E; Cory, David G; Ramanathan, Chandrasekhar

2011-04-21

Single crystal silicon is an excellent system to explore dynamic nuclear polarization (DNP), as it exhibits a continuum of properties from metallic to insulating as a function of doping concentration and temperature. At low doping concentrations DNP has been observed to occur via the solid effect, while at very high-doping concentrations an Overhauser mechanism is responsible. Here we report the hyperpolarization of (29)Si in n-doped silicon crystals, with doping concentrations in the range of (1-3) × 10(17) cm(-3). In this regime exchange interactions between donors become extremely important. The sign of the enhancement in our experiments and its frequency dependence suggest that the (29)Si spins are directly polarized by donor electrons via an Overhauser mechanism within exchange-coupled donor clusters. The exchange interaction between donors only needs to be larger than the silicon hyperfine interaction (typically much smaller than the donor hyperfine coupling) to enable this Overhauser mechanism. Nuclear polarization enhancement is observed for a range of donor clusters in which the exchange energy is comparable to the donor hyperfine interaction. The DNP dynamics are characterized by a single exponential time constant that depends on the microwave power, indicating that the Overhauser mechanism is a rate-limiting step. Since only about 2% of the silicon nuclei are located within 1 Bohr radius of the donor electron, nuclear spin diffusion is important in transferring the polarization to all the spins. However, the spin-diffusion time is much shorter than the Overhauser time due to the relatively weak silicon hyperfine coupling strength. In a 2.35 T magnetic field at 1.1 K, we observed a DNP enhancement of 244 ± 84 resulting in a silicon polarization of 10.4 ± 3.4% following 2 h of microwave irradiation.

Polarization of charmonium in πN collisions

International Nuclear Information System (INIS)

Tang, Wai-Keung.

1994-09-01

Measurements of the polarization of J/ψ produced in pion-nucleus collisions are in disagreement with leading twist QCD prediction were J/ψ is observed to have negligible polarization whereas theory predicts substantial polarization. We argue that this discrepancy cannot be due to poorly known structure functions nor the relative production rates of J/ψ and X J . The disagreement between theory and experiment suggests important higher twist corrections, as has earlier been surmised from the anomalous non-factorized nuclear A-dependence of the J/ψ cross section

Growth of GaN nanostructures with polar and semipolar orientations for the fabrication of UV LEDs

Science.gov (United States)