Preparation of high purity yttrium single crystals by electrotransport

International Nuclear Information System (INIS)

Volkov, V.T.; Nikiforova, T.V.; Ionov, A.M.; Pustovit, A.N.; Sikharulidse, G.G.

1981-01-01

The possibility of obtaining yttrium crystals of high purity by the method of solid state electrotransport (SSE) was investigated in the present work. The behaviour of low contents of iron, aluminium, silicon, tantalum, copper, silver and vanadium as metallic impurities was studied using mass spectrometry. It is shown that all the impurities investigated, except copper, migrate to the anode. During electrotransfer a purification with respect to these impurities by a factor of 4 - 6 is obtained. It is proposed that the diffusion coefficients of the metallic impurities investigated are anomalously high and that the behaviour of the impurities during SSE in adapters necessitates further investigation. By using a three-stage process with intermediate removal of the anode end yttrium single crystals with a resistance ratio rho 293 /rhosub(4.2)=570 were produced. (Auth.)

Extraction-spectrophotometric method for silicon determination in high-purity substances. 1. Silicon determination in tellurium

Energy Technology Data Exchange (ETDEWEB)

Shaburova, V P; Yudelevich, I G [AN SSSR, Novosibirsk (USSR). Inst. Neorganicheskoj Khimii

1989-01-01

The extraction-spectrophotometric method for silicon determination in tellurium based on extraction isolation of the base by tributyl phosphate from hydrochloride solutions and with addition of HNO/sub 3/ and spectrophotometric silicon determination using malachite green is developed. The method permits to determine 2x10/sup -1/-3x10/sup -4/ % Si.

High-purity aluminium creep under high hydrostatic pressure

International Nuclear Information System (INIS)

Zajtsev, V.I.; Lyafer, E.I.; Tokij, V.V.

1977-01-01

The effect of the hydrostatic pressure on the rate of steady-state creep of high-purity aluminium was investigated. It is shown that the hydrostatic pressure inhibits the creep. The activation volume of the creep is independent of the direction in the range of (4.7-6.2) kg/mm 2 and of the pressure in the range of (1-7.8000) atm. It is concluded that self-diffusion does not control the creep of high-purity aluminium at room temperature in the investigated stress and pressure range

Production of high purity granular metals: cadmium, zinc, lead

Directory of Open Access Journals (Sweden)

Shcherban A. P.

2017-04-01

Full Text Available Cadmium, zinc and lead are constituent components of many semiconductor compounds. The obtained high purity distillates and ingots are large-size elements, which is not always convenient to use, and thus require additional grinding, which does not always allow maintaining the purity of the original materials. For the growth of semiconductor and scintillation single crystals it is advisable to use "friable" granular high-purity distillates, which can be processed without the risk of contamination. For example, the European low-background experiment LUCIFER required more than 20 kg of high-purity granulated zinc, which was agreed to be supplied by NSC KIPT. This task was then extended to cadmium and lead. Motivated by these tasks, the authors of this paper propose complex processes of deep refining of cadmium, zinc and lead by vacuum distillation. A device producing granules has been developed. The process of granulation of high-purity metals is explored. The purity of produced granules for cadmium and zinc is >99,9999, and >99,9995% for lead granules. To prevent oxidation of metal granules during exposition to air, chemical methods of surface passivation were used. Organic solvent based on dimethylformamide used as a coolant improves the resistance of granules to atmospheric corrosion during the granulation of high purity Cd, Zn and Pb.

Batch extractive distillation for high purity methanol

International Nuclear Information System (INIS)

Zhang Weijiang; Ma Sisi

2006-01-01

In this paper, the application in chemical industry and microelectronic industry, market status and the present situation of production of high purity methanol at home and abroad were introduced firstly. Purification of industrial methanol for high purity methanol is feasible in china. Batch extractive distillation is the best separation technique for purification of industrial methanol. Dimethyl sulfoxide was better as an extractant. (authors)

High-Purity Glasses Based on Arsenic Chalcogenides

Science.gov (United States)

2001-06-01

Chemical interaction of chalcogenides and some impurities (CS 2, TeO2 ) with the quartz glass at high temperature leads to the thin layers formation...UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADPO1 1523 TITLE: High-Purity Glasses Based on Arsenic Chalcogenides...Materials Vol. 3, No. 2, June 2001, p. 341 - 349 HIGH-PURITY GLASSES BASED ON ARSENIC CHALCOGENIDES M. F. Churbanov, I. V. Scripachev, G. E. Snopatin, V. S

Efficient conversion of sand to nano-silicon and its energetic Si-C composite anode design for high volumetric capacity lithium-ion battery

Science.gov (United States)

Furquan, Mohammad; Raj Khatribail, Anish; Vijayalakshmi, Savithri; Mitra, Sagar

2018-04-01

Silicon is an attractive anode material for Li-ion cells, which can provide energy density 30% higher than any of the today's commercial Li-ion cells. In the current study, environmentally benign, high abundant, and low cost sand (SiO2) source has been used to prepare nano-silicon via scalable metallothermic reduction method using micro wave heating. In this research, we have developed and optimized a method to synthesis high purity nano silicon powder that takes only 5 min microwave heating of sand and magnesium mixture at 800 °C. Carbon coated nano-silicon electrode material is prepared by a unique method of coating, polymerization and finally in-situ carbonization of furfuryl alcohol on to the high purity nano-silicon. The electrochemical performance of a half cell using the carbon coated high purity Si is showed a stable capacity of 1500 mAh g-1 at 6 A g-1 for over 200 cycles. A full cell is fabricated using lithium cobalt oxide having thickness ≈56 μm as cathode and carbon coated silicon thin anode of thickness ≈9 μm. The fabricated full cell of compact size exhibits excellent volumetric capacity retention of 1649 mAh cm-3 at 0.5 C rate (C = 4200 mAh g-1) and extended cycle life (600 cycles). The full cell is demonstrated on an LED lantern and LED display board.

High-purity germanium crystal growing

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1982-10-01

The germanium crystals used for the fabrication of nuclear radiation detectors are required to have a purity and crystalline perfection which is unsurpassed by any other solid material. These crystals should not have a net electrically active impurity concentration greater than 10 10 cm - 3 and be essentially free of charge trapping defects. Such perfect crystals of germanium can be grown only because of the highly favorable chemical and physical properties of this element. However, ten years of laboratory scale and commercial experience has still not made the production of such crystals routine. The origin and control of many impurities and electrically active defect complexes is now fairly well understood but regular production is often interrupted for long periods due to the difficulty of achieving the required high purity or to charge trapping in detectors made from crystals seemingly grown under the required conditions. The compromises involved in the selection of zone refining and crystal grower parts and ambients is discussed and the difficulty in controlling the purity of key elements in the process is emphasized. The consequences of growing in a hydrogen ambient are discussed in detail and it is shown how complexes of neutral defects produce electrically active centers

High mechanical Q-factor measurements on silicon bulk material

Energy Technology Data Exchange (ETDEWEB)

Schwarz, Christian; Nawrodt, Ronny; Heinert, Daniel; Schroeter, Anja; Neubert, Ralf; Thuerk, Matthias; Vodel, Wolfgang; Seidel, Paul [Institut fuer Festkoerperphysik, Helmholtzweg 5, D-07743 Jena (Germany); Tuennermann, Andreas [Institut fuer Angewandte Physik, Albert-Einstein-Strasse 15, D-07745 Jena (Germany)

2008-07-01

The direct observation of gravitational waves is one of the biggest challenges in science. Current detectors are limited by different kinds of noise. One of the fundamental noise sources is thermal noise arising from the optical components. One of the most promising attempts to reduce the thermal noise contribution in future detectors will be the use of high Q-factor materials at cryogenic temperatures. Silicon seems to be the most interesting material due to its excellent optical and thermal properties. We present high Q-factor measurements on bulk samples of high purity silicon in a temperature range from 5 to 300 K. The sample dimensions vary between 76.2 mm x 12..75 mm. The Q-factor exceeds 4.10{sup 8} at 6 K. The influence of the crystal orientation, doping and the sample preparation on the Q-factor is discussed.

Evaluation of selected chemical processes for production of low-cost silicon phase 2. silicon material task, low-cost silicon solar array project

Science.gov (United States)

Blocher, J. M., Jr.; Browning, M. F.; Rose, E. E.; Thompson, W. B.; Schmitt, W. A.; Fippin, J. S.; Kidd, R. W.; Liu, C. Y.; Kerbler, P. S.; Ackley, W. R.

1978-01-01

Progress from October 1, 1977, through December 31, 1977, is reported in the design of the 50 MT/year experimental facility for the preparation of high purity silicon by the zinc vapor reduction of silicon tetrachloride in a fluidized bed of seed particles to form a free flowing granular product.

High-temperature mechanical properties of high-purity 70 mass% Cr-Fe alloy

Energy Technology Data Exchange (ETDEWEB)

Asahina, M.; Harima, N.; Takaki, S.; Abiko, K. [Tohoku Univ., Sendai (Japan). Inst. for Materials Research

2002-01-16

An ingot of high-purity 70 mass% Cr-Fe alloy was prepared by high-frequency induction melting in a high-purity argon atmosphere using a cold copper crucible. Its tensile properties such as hot-ductility and tensile strength were measured, and compared with the results for a high-purity 50 mass% Cr-Fe alloy, a high-purity 60 mass% Cr-Fe alloy and a Ni-based super-alloy. The formation of {sigma}-phase was also examined. The purity of a 70Cr-Fe alloy (70 mass% Cr-Fe alloy) ingot is more than 99.98 mass% and the total amount of gaseous impurities (C, N, O, S, H) in the 70Cr-Fe alloy is 69.9 mass ppm. The strength of the 70Cr-Fe alloy is higher than those of the 60Cr-Fe alloy and the 50Cr-Fe alloy at the temperatures between 293 and 1573 K, without decrease in ductility with increasing Cr content. The 70Cr-Fe alloy also possesses excellent high-temperature ductility. The {sigma}-phase was not observed after aging of 3.6 Ms at 873 K. Consequently, the 70Cr-Fe alloy is an excellent alloy as the base of super heat-resistant alloys. (orig.)

Effect of phosphorus on hot ductility of high purity iron

International Nuclear Information System (INIS)

Abiko, K.; Liu, C.M.; Ichikawa, M..; Suenaga, H.; Tanino, M.

1995-01-01

Tensile tests on high purity Fe-P alloys with 0, 0.05 and 0.1 mass%P were carried out at temperatures between 300 K and 1073 K to clarify the intrinsic effect of phosphorus on the mechanical properties of iron at elevated temperatures. Microstructures of as-quenched, interrupted and ruptured specimens were observed. Experimental results show that the addition of phosphorus causes a remarkable increase in proof stress of high purity iron at 300 K, but the increase in proof stress by phosphorus decreases with increasing test temperature. The strengthening effect of phosphorus reduces to zero at 1073 K. High purity iron and Fe-P alloys rupture at almost 100% reduction in area at the whole test temperatures. However, Fe-P alloys show much larger elongation at test temperatures above 773 K than high purity iron. The increased elongation of high purity iron by addition of phosphorus was shown to be related to the effect of phosphorus on dynamic recovery and recrystallization of iron as its intrinsic effect. (orig.)

Fabrication of high quality anodic aluminum oxide (AAO) on low purity aluminum—A comparative study with the AAO produced on high purity aluminum

International Nuclear Information System (INIS)

Michalska-Domańska, Marta; Norek, Małgorzata; Stępniowski, Wojciech J.; Budner, Bogusław

2013-01-01

Highlights: • Nanoporous alumina was fabricated by anodization in sulfuric acid solution with glycol. • The AAO manufacturing on low- and high-purity Al was compared. • The pores size was ranging between 30 and 50 nm. • No difference in the quality of the AAO fabricated on both Al types was observed. • The current vs. anodization time curves were recorded. -- Abstract: In this work the quality, arrangement, composition, and regularity of nanoporous AAO formed on the low-purity (AA1050) and high-purity aluminum during two-step anodization in a mixture of sulfuric acid solution (0.3 M), water and glycol (3:2, v/v), at various voltages (15, 20, 25, 30, 35 V) and at temperature of −1 °C, are investigated. The electrochemical conditions have allowed to obtain pores with the size ranging from 30 to 50 nm, which are much larger than those usually obtained by anodization in a pure sulfuric acid solution (<20 nm). The mechanism of the AAO growth is discussed. It was found that with the increase of applied anodizing voltage a number of incorporated sulfate ions in the aluminum oxide matrix increases, which was connected with the appearance of an unusual area in the current vs. time curves. On the surface of anodizing low- and high-purity aluminum, the formation of hillocks was observed, which was associated with the sulfate ions incorporation. The sulfate ions are replacing the oxygen atom/atoms in the AAO amorphous crystal structure and, consequently, the AAO template swells, the oxide cracks and uplifts causing the formation of hillocks. The same mechanism occurs for both low- and high-purity aluminum. Nanoporous AAO characterized by a very high regularity, not registered previously for low purity aluminum, was obtained. Furthermore, no significant difference in the regularity ratio between the AAO obtained on low- and high-purity aluminum, was observed. The electrochemical conditions applied in this study can be, thus, used for the fabrication of high quality

77 GHz MEMS antennas on high-resistivity silicon for linear and circular polarization

KAUST Repository

Sallam, M. O.

2011-07-01

Two new MEMS antennas operating at 77 GHz are presented in this paper. The first antenna is linearly polarized. It possesses a vertical silicon wall that carries a dipole on top of it. The wall is located on top of silicon substrate covered with a ground plane. The other side of the substrate carries a microstrip feeding network in the form of U-turn that causes 180 phase shift. This phase-shifter feeds the arms of the dipole antenna via two vertical Through-Silicon Vias (TSVs) that go through the entire wafer. The second antenna is circularly polarized and formed using two linearly polarized antennas spatially rotated with respect to each other by 90 and excited with 90 phase shift. Both antennas are fabricated using novel process flow on a single high-resistivity silicon wafer via bulk micromachining. Only three processing steps are required to fabricate these antennas. The proposed antennas have appealing characteristics, such as high polarization purity, high gain, and high radiation efficiency. © 2011 IEEE.

Preparation of high-purity cerium nitrate

International Nuclear Information System (INIS)

Avila, Daniela Moraes; Silva Queiroz, Carlos Alberto da; Santos Mucillo, Eliana Navarro dos

1995-01-01

The preparation of high-purity cerium nitrate has been carried out Cerium oxide has been prepared by fractioned precipitation and ionic exchange techniques, using a concentrate with approximately 85% of cerium oxide from NUCLEMON as raw material. Five sequential ion-exchange columns with a retention capacity of 170 g each have been used. The ethylenediamine-tetraacetic acid (EDTA) was used as eluent. The cerium content has been determined by gravimetry and iodometry techniques. The resulting cerium oxide has a purity > 99%. This material was transformed in cerium nitrate to be used as precursor for the preparation of Zirconia-ceria ceramics by the coprecipitation technique. (author)

Recovery of high-purity hydrogen from COG

Energy Technology Data Exchange (ETDEWEB)

Tsukiyama, Y

1982-01-01

A general account of the latest trends in the recovery of high-purity hydrogen from coke oven gas (COG), the article being based on both Japanese and overseas literature: 1) Deep-freeze separation: impurities are liquefied and removed. This method make use of the fact that hydrogen is hard to liquefy. 2) The PSA method: high-purity hydrogen is recovered by the adsorption of other constituents at high pressures. This technique makes use of the fact that the adsorption capacity of an adsorbent varies with the partial pressure of the substances being adsorbed. 3) Membrane separation: a permeation separation method that uses a functional polymer separation membrane, and that depends on the fact that hydrogen has a low molecular weight in comparison with the other constituents. (19 refs.) (In Japanese)

Establishing comparability and compatibility in the purity assessment of high purity zinc as demonstrated by the CCQM-P149 intercomparison

Science.gov (United States)

Vogl, Jochen; Kipphardt, Heinrich; Richter, Silke; Bremser, Wolfram; del Rocío Arvizu Torres, María; Manzano, Judith Velina Lara; Buzoianu, Mirella; Hill, Sarah; Petrov, Panayot; Goenaga-Infante, Heidi; Sargent, Mike; Fisicaro, Paola; Labarraque, Guillaume; Zhou, Tao; Turk, Gregory C.; Winchester, Michael; Miura, Tsutomu; Methven, Brad; Sturgeon, Ralph; Jährling, Reinhard; Rienitz, Olaf; Mariassy, Michal; Hankova, Zuzana; Sobina, Egor; Ivanovich Krylov, Anatoly; Anatolievich Kustikov, Yuri; Vladimirovich Smirnov, Vadim

2018-04-01

For the first time, an international comparison was conducted on the determination of the purity of a high purity element. Participants were free to choose any analytical approach appropriate for their institute’s applications and services. The material tested was a high purity zinc, which had earlier been assessed for homogeneity and previously used in CCQM-K72 for the determination of six defined metallic impurities. Either a direct metal assay of the Zn mass fraction was undertaken by EDTA titrimetry, or an indirect approach was used wherein all impurities, or at least the major ones, were determined and their sum subtracted from ideal purity of 100%, or 1 kg kg-1. Impurity assessment techniques included glow discharge mass spectrometry, inductively coupled plasma mass spectrometry and carrier gas hot extraction/combustion analysis. Up to 91 elemental impurities covering metals, non-metals and semi-metals/metalloids were quantified. Due to the lack of internal experience or experimental capabilities, some participants contracted external laboratories for specific analytical tasks, mainly for the analysis of non-metals. The reported purity, expressed as zinc mass fraction in the high purity zinc material, showed excellent agreement for all participants, with a relative standard deviation of 0.011%. The calculated reference value, w(Zn)  =  0.999 873 kg kg-1, was assigned an asymmetric combined uncertainty of  +0.000 025 kg kg-1 and  -0.000 028 kg kg-1. Comparability amongst participating metrology institutes is thus demonstrated for the purity determination of high purity metals which have no particular difficulties with their decomposition/dissolution process when solution-based analytical methods are used, or which do not have specific difficulties when direct analysis approaches are used. Nevertheless, further development is required in terms of uncertainty assessment, quantification of non-metals and the determination of purity

Growth of high purity semiconductor epitaxial layers by liquid phase ...

Indian Academy of Sciences (India)

Unknown

semiconductor materials in high purity form by liquid phase epitaxy (LPE) technique. Various possible sources of impurities in such ... reference to the growth of GaAs layers. The technique of growing very high purity layers ... the inner walls of the gas lines and (e) the containers for storing, handling and cleaning of the mate-.

Study of Pellets and Lumps as Raw Materials in Silicon Production from Quartz and Silicon Carbide

Science.gov (United States)

Dal Martello, E.; Tranell, G.; Gaal, S.; Raaness, O. S.; Tang, K.; Arnberg, L.

2011-10-01

The use of high-purity carbon and quartz raw materials reduces the need for comprehensive refining steps after the silicon has been produced carbothermically in the electric reduction furnace. The current work aims at comparing the reaction mechanisms and kinetics occurring in the inner part of the reduction furnace when pellets or lumpy charge is used, as well as the effect of the raw material mix. Laboratory-scale carbothermic reduction experiments have been carried out in an induction furnace. High-purity silicon carbide and two different high-purity hydrothermal quartzes were charged as raw materials at different molar ratios. The charge was in the form of lumps (size, 2-5 mm) or as powder (size, 10-20 μm), mixed and agglomerated as pellets (size, 1-3 mm) and reacted at 2273 K (2000 °C). The thermal properties of the quartzes were measured also by heating a small piece of quartz in CO atmosphere. The investigated quartzes have different reactivity in reducing atmosphere. The carbothermal reduction experiments show differences in the reacted charge between pellets and lumps as charge material. Solid-gas reactions take place from the inside of the pellets porosity, whereas reactions in lumps occur topochemically. Silicon in pellets is produced mainly in the rim zone. Larger volumes of silicon have been found when using lumpy charge. More SiO is produced when using pellets than for lumpy SiO2 for the same molar ratio and heating conditions. The two SiC polytypes used in the carbothermal reduction experiments as carbon reductants presented different reactivity.

Thermal and electrical conductivities of high purity tantalum

International Nuclear Information System (INIS)

Archer, S.L.

1978-01-01

The electrical resistivity and thermal conductivity of three high purity tantalum samples have been measured as functions of temperature over a temperature range of 5K to 65K. Sample purities ranged up to a resistivity ratio of 1714. The highest purity sample had a residual resistivity of .76 x 10 -10 OMEGA-m. The intrinsic resistivity varied as T 3 . 9 from 10K to 31K. The thermal conductivity of the purest sample had a maximum of 840 W/mK at 9.8K. The intrinsic thermal resistivity varied as T 2 . 4 from 10K to 35K. At low temperatures electrons were scattered primarily by impurities and by phonons with both interband and intraband transitions observed. The electrical and thermal resistivity is departed from Matthiessen's rule at low temperatures

Development of high purity niobium material for superconducting cavities

International Nuclear Information System (INIS)

Umezawa, Hiroaki; Takeuchi, Koichi; Sakita, Kohei; Suzuki, Takafusa; Saito, Kenji; Noguchi, Shuichi.

1993-01-01

For the superconducting niobium cavities, issues of thermal quench and field emission have to be solved to achieve a high field gradient (>25MV/m) for TESLA (TeV Energy Superconducting Linear Accelerator). In order to overcome the quench, upgrading of thermal conductivity of niobium material at the low temperature is very important. On the reduction of the field emission not only dust particles but also defect, impurity and inhomogeneity should be considered. Therefore development of high purity niobium material is very important to solve these issues. This paper describes the our latest R and D for high purity niobium material. (author)

Production of high purity radiothallium

International Nuclear Information System (INIS)

Lebowitz, E.; Greene, M.W.

1976-01-01

The method of producing high-purity thallium-201 for use as a myocardial scanning agent comprises the steps of irradiating a thallium target with protons to give the reaction 203 Tl(p,3n) 201 Pb, separating in ion exchange columns the lead from the thallium isotopes, permitting the lead to decay, and then purifying the thallium solution and converting the thallium present to thallous form in which it can be used

The Impact of Metallic Impurities on Minority Carrier Lifetime in High Purity N-type Silicon

Science.gov (United States)

Yoon, Yohan

Boron-doped p-type silicon is the industry standard silicon solar cell substrate. However, it has serious limitations: iron boron (Fe-B) pairs and light induced degradation (LID). To suppress LID, the replacement of boron by gallium as a p-type dopant has been proposed. Although this eliminates B-O related defects, gallium-related pairing with iron, oxygen, and carbon can reduce lifetime in this material. In addition resistivity variations are more pronounced in gallium doped ingots, however Continuous-Czochralski (c-Cz) growth technologies are being developed to overcome this problem. In this work lifetime limiting factors and resistivity variations have been investigated in this material. The radial and axial variations of electrically active defects were observed using deep level transient spectroscopy (DLTS) these have been correlated to lifetime and resistivity variations. The DLTS measurements demonstrated that iron-related pairs are responsible for the lifetime variations. Specifically, Fe-Ga pairs were found to be important recombination sites and are more detrimental to lifetime than Fei. Typically n-type silicon has a higher minority carrier lifetime than p-type silicon with similar levels of contamination. That is because n-type silicon is more tolerant to metallic impurities, especially Fe. Also, it has no serious issues in relation to lifetime degradation, such as FeB pairs and light-induced degradation (LID). However, surface passivation of the p + region in p+n solar cells is much more problematic than the n+p case where silicon nitride provides very effective passivation of the cell. SiO2 is the most effective passivation for n type surfaces, but it does not work well on B-doped surfaces, resulting in inadequate performance. Al2O3 passivation layer suggested for B-doped emitters. With this surface passivation layer a 23.2 % conversion efficiency has been achieved. After this discovery n-type silicon is now being seriously considered for

The Research about Preparation of High Purity Hexachlorodisilane

Science.gov (United States)

Wan, Ye; Zhao, Xiong; Yan, Dazhou; Zhao, Yu; Guo, Shuhu; Wang, Lei; Yang, Dian

2017-12-01

This article demonstrated a technology for producing high purity hexachlorodisilane what is one raw material of Semiconductor industry, which using the method of combination adsorption with rectification, whose material was from polysilicon residues of polysilicon company. This technology could remove most high boiling points chloro-silicane impurities and metal impurities effectively. The purity of Si2Cl6 produced by this technology can be up to 99.9%, the content of metal impurities can be low at 4ppb, which can meet the requirement of industy using completely. The technology extends the routes of Si2Cl6 in localization, having the advantages of simple process, continuous operation, and large capacity and so on.

Analytical monitoring of systems for the production of high-purity, desalinated water

International Nuclear Information System (INIS)

Kunert, I.

1988-01-01

The purity requirements to be met by high-purity water currently push the most sensitive analytical methods to their utmost limits of sensitivity. The required degree of purity of the water at present can only be achieved by application of membrane processes, and pre-purification of the feedwater to a quality corresponding to that of the raw water source. The contribution in hand discusses the analytical monitoring of the raw water treatment plant, the water treatment prior to the treatment by reverse osmosis, monitoring and control of the modules for reverse osmosis, and the monitoring of high-purity water production for the microelectronics industry. (orig./RB) [de

Characterisation of two AGATA asymmetric high purity germanium capsules

International Nuclear Information System (INIS)

Colosimo, S.J.; Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S.; Lazarus, I.H.; Nolan, P.J.; Simpson, J.; Unsworth, C.

2015-01-01

The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array

Characterisation of two AGATA asymmetric high purity germanium capsules

Energy Technology Data Exchange (ETDEWEB)

Colosimo, S.J., E-mail: sjc@ns.ph.liv.ac.uk [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Moon, S.; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Harkness-Brennan, L.; Judson, D.S. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Lazarus, I.H. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Nolan, P.J. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom); Simpson, J. [STFC Daresbury, Daresbury, Warrington WA4 4AD (United Kingdom); Unsworth, C. [Department of Physics, Oliver Lodge Laboratory, University of Liverpool, Liverpool L69 7ZE (United Kingdom)

2015-02-11

The AGATA spectrometer is an array of highly segmented high purity germanium detectors. The spectrometer uses pulse shape analysis in order to track Compton scattered γ-rays to increase the efficiency of nuclear spectroscopy studies. The characterisation of two high purity germanium detector capsules for AGATA of the same A-type has been performed at the University of Liverpool. This work will examine the uniformity of performance of the two capsules, including a comparison of the resolution and efficiency as well as a study of charge collection. The performance of the capsules shows good agreement, which is essential for the efficient operation of the γ-ray tracking array.

Bibliographical study on the high-purity germanium radiation detectors used in gamma and X spectrometry

International Nuclear Information System (INIS)

Bornand, Bernard; Friant, Alain

1979-03-01

The germanium or silicon lithium-drifted detectors, Ge(Li) or Si(Li), and high-purity germanium detectors, HP Ge (impurity concentration approximately 10 10 cm -3 ), are the most commonly used at the present time as gamma and X-ray spectrometers. The HP Ge detectors for which room temperature storage is the main characteristic can be obtained with a large volume and a thin window, and are used as the Ge(Li) in γ ray spectrometry or the Si(Li) in X-ray spectrometry. This publication reviews issues from 1974 to 1978 on the state of the art and applications of the HP Ge semiconductor detectors. 101 bibliographical notices with French summaries are presented. An index for authors, documents and periodicals, and subjects is included [fr

High purity in steels as a criterion for materials development

International Nuclear Information System (INIS)

Jacobi, H.

1995-01-01

This summarizing report discusses the materials and application prospects for higher purity in steels, which will make possible further advances in materials behaviour and workability. Improvements in purity and homogeneity permit in particular more rational production of thin foils and wire, one-piece shaping of complicated bodywork components and the drawing, wall-ironing and flanging of two-piece beverage cans. Welded designs in plant and mechanical engineering can be fabricated with less effort and less weight. Difficult component geometries and shaping processes can be more easily mastered. Steels with optimized fracture toughness can be exposed to more extreme loads at even lower temperatures: applications worthy of mention include offshore engineering and large-diameter linepipes for use in arctic regions and at great underwater depths. Liquefied-gas transport vessels can be made more resistant to brittle rupture. The bending fatigue strength and service-life of valve-spring and rolling-bearing steels can be significantly increased. High-purity surfaces on piston rods and cylinders guarantee reliability in hydraulic systems, and high-purity calendering rolls permit defect-free embossing of paper surfaces. (orig.)

Printable nanostructured silicon solar cells for high-performance, large-area flexible photovoltaics.

Science.gov (United States)

Lee, Sung-Min; Biswas, Roshni; Li, Weigu; Kang, Dongseok; Chan, Lesley; Yoon, Jongseung

2014-10-28

Nanostructured forms of crystalline silicon represent an attractive materials building block for photovoltaics due to their potential benefits to significantly reduce the consumption of active materials, relax the requirement of materials purity for high performance, and hence achieve greatly improved levelized cost of energy. Despite successful demonstrations for their concepts over the past decade, however, the practical application of nanostructured silicon solar cells for large-scale implementation has been hampered by many existing challenges associated with the consumption of the entire wafer or expensive source materials, difficulties to precisely control materials properties and doping characteristics, or restrictions on substrate materials and scalability. Here we present a highly integrable materials platform of nanostructured silicon solar cells that can overcome these limitations. Ultrathin silicon solar microcells integrated with engineered photonic nanostructures are fabricated directly from wafer-based source materials in configurations that can lower the materials cost and can be compatible with deterministic assembly procedures to allow programmable, large-scale distribution, unlimited choices of module substrates, as well as lightweight, mechanically compliant constructions. Systematic studies on optical and electrical properties, photovoltaic performance in experiments, as well as numerical modeling elucidate important design rules for nanoscale photon management with ultrathin, nanostructured silicon solar cells and their interconnected, mechanically flexible modules, where we demonstrate 12.4% solar-to-electric energy conversion efficiency for printed ultrathin (∼ 8 μm) nanostructured silicon solar cells when configured with near-optimal designs of rear-surface nanoposts, antireflection coating, and back-surface reflector.

Growth and characterization of high-purity SiC single crystals

Science.gov (United States)

Augustine, G.; Balakrishna, V.; Brandt, C. D.

2000-04-01

High-purity SiC single crystals with diameter up to 50 mm have been grown by the physical vapor transport method. Finite element analysis was used for thermal modeling of the crystal growth cavity in order to reduce stress in the grown crystal. Crystals are grown in high-purity growth ambient using purified graphite furniture and high-purity SiC sublimation sources. Undoped crystals up to 50 mm in diameter with micropipe density less than 100 cm -2 have been grown using this method. These undoped crystals exhibit resistivities in the 10 3 Ω cm range and are p-type due to the presence of residual acceptor impurities, mainly boron. Semi-insulating SiC material is obtained by doping the crystal with vanadium. Vanadium has a deep donor level located near the middle of the band gap, which compensates the residual acceptor resulting in semi-insulating behavior.

Confined recrystallization of high-purity aluminium during accumulative roll bonding of aluminium laminates

International Nuclear Information System (INIS)

Chekhonin, Paul; Beausir, Benoît; Scharnweber, Juliane; Oertel, Carl-Georg; Hausöl, Tina; Höppel, Heinz Werner; Brokmeier, Heinz-Günter; Skrotzki, Werner

2012-01-01

Aluminium laminates consisting of high-purity aluminium and commercially pure aluminium have been produced by accumulative roll bonding (ARB) at ambient temperature for up to 10 cycles. To study the microstructure and texture development of the high-purity aluminium layers with regard to the shrinking layer thickness during ARB, microstructure and texture investigations were carried out by electron backscatter diffraction and neutron and X-ray diffraction, respectively. While the commercially pure aluminium layers develop an ultrafine-grained microstructure, partial discontinuous recrystallization occurs in the high-purity layers. The texture of the high-purity layers mainly consists of Cube and “Tilted Cube” (tilted with respect to the transverse direction) components. The experimental results are discussed with respect to confined recrystallization in the ARB aluminium laminates.

Perspectives of data-driven LPV modeling of high-purity distillation columns

NARCIS (Netherlands)

Bachnas, A.A.; Toth, R.; Mesbah, A.; Ludlage, J.H.A.

2013-01-01

Abstract—This paper investigates data-driven, Linear- Parameter-Varying (LPV) modeling of a high-purity distillation column. Two LPV modeling approaches are studied: a local approach, corresponding to the interpolation of Linear Time- Invariant (LTI) models identified at steady-state purity levels,

Activation analysis of high purity metals and application to study on physical properties

International Nuclear Information System (INIS)

Ueda, Yoshitake; Hashimoto, Eiji; Matsushita, Rokuji.

1994-01-01

In order to determine the true characteristics of matters, the utmost reduction of impurities is indispensable. By the heightening of the purity of aluminum, that of 99.9999% purity has been obtained, but efforts have been exerted to further heighten the purity. For the purpose, it is important to know the behavior of trace impurities during refining, and the quantitative research by neutron activation analysis for various impurities has been carried out. The research on the electron condition of trace impurity atoms in refined aluminum is also important. The band refining of high purity aluminum is explained. By repeating the refining 10 times, the sample of RRR exceeding 30000 was obtained. The impurities contributing to the resistivity are Sc, Ti, V and Cr. Based on the results, the heightening of aluminum purity was attempted by devising the new procedure. As for the electric properties of solute elements in high purity metals, those of transition elements and rare earth elements in aluminum are reported. As the result of measuring the remaining resistance, the sample having the RRR exceeding 45000 after the correction for size effect was done has been obtained. At present, the efforts toward further high purity are continued. (K.I.)

Solidification and properties of photovoltaic silicon

International Nuclear Information System (INIS)

Anon.

2007-01-01

Strenuous efforts are being made to develop an economical process for purifying liquid metallurgical-grade silicon, in response to the growing shortages in high-purity silicon for use in manufacturing photovoltaic cells. A research project is studying this issue at C.E. Saclay, Gif-sur-Yvette, France, co-funded by ADEME (the French Environment and Energy Management Agency) and CEA-INSTN (French Atomic Energy Commission National Institute for Nuclear Science and Technology). (authors)

Hydrogen in amorphous silicon

International Nuclear Information System (INIS)

Peercy, P.S.

1980-01-01

The structural aspects of amorphous silicon and the role of hydrogen in this structure are reviewed with emphasis on ion implantation studies. In amorphous silicon produced by Si ion implantation of crystalline silicon, the material reconstructs into a metastable amorphous structure which has optical and electrical properties qualitatively similar to the corresponding properties in high-purity evaporated amorphous silicon. Hydrogen studies further indicate that these structures will accomodate less than or equal to 5 at.% hydrogen and this hydrogen is bonded predominantly in a monohydride (SiH 1 ) site. Larger hydrogen concentrations than this can be achieved under certain conditions, but the excess hydrogen may be attributed to defects and voids in the material. Similarly, glow discharge or sputter deposited amorphous silicon has more desirable electrical and optical properties when the material is prepared with low hydrogen concentration and monohydride bonding. Results of structural studies and hydrogen incorporation in amorphous silicon were discussed relative to the different models proposed for amorphous silicon

Method of purifying metallurgical grade silicon employing reduced pressure atmospheric control

Science.gov (United States)

Ingle, W. M.; Thompson, S. W.; Chaney, R. E. (Inventor)

1979-01-01

A method in which a quartz tube is charged with chunks of metallurgical grade silicon and/or a mixture of such chunks and high purity quartz sand, and impurities from a class including aluminum, boron, as well as certain transition metals including nickel, iron, and manganese is described. The tube is then evacuated and heated to a temperature within a range of 800 C to 1400 C. A stream of gas comprising a reactant, such as silicon tetrafluoride, is continuously delivered at low pressures through the charge for causing a metathetical reaction of impurities of the silicon and the reactant to occur for forming a volatile halide and leaving a residue of silicon of an improved purity. The reactant which included carbon monoxide gas and impurities such as iron and nickel react to form volatile carbonyls.

Zone refining high-purity germanium

International Nuclear Information System (INIS)

Hubbard, G.S.; Haller, E.E.; Hansen, W.L.

1977-10-01

The effects of various parameters on germanium purification by zone refining have been examined. These parameters include the germanium container and container coatings, ambient gas and other operating conditions. Four methods of refining are presented which reproducibly yield 3.5 kg germanium ingots from which high purity (vertical barN/sub A/ - N/sub D/vertical bar less than or equal to2 x 10 10 cm -3 ) single crystals can be grown. A qualitative model involving binary and ternary complexes of Si, O, B, and Al is shown to account for the behavior of impurities at these low concentrations

Preserving high-purity 233U

International Nuclear Information System (INIS)

Krichinsky, Alan; Giaquinto, Joe; Canaan, Doug

2016-01-01

The MARC X Conference hosted a workshop for the scientific community to communicate needs for high-purity 233 U and its by-products in order to preserve critical items otherwise slated for downblending and disposal. Currently, only small portions of the U.S. holdings of separated 233 U are being preserved. However, many additional kilograms of 233 U (>97 % pure) still are destined to be disposed, and it is unlikely that this material will ever be replaced due to a lack of operating production capability. Summaries of information conveyed at the workshop and feedback obtained from the scientific community are presented herein. (author)

Pressure-assisted sintering of high purity barium titanate

NARCIS (Netherlands)

van den Cruijsem, S.; Varst, van der P.G.T.; With, de G.; Bortzmeyer, D.; Boussuge, M.; Chartier, Th.; Hausonne, J.M.; Mocellin, A.; Rousset, A.; Thevenot, F.

1997-01-01

The dielectric behaviour of High Purity Barium titanate (HPB) ceramics is strongly dependent on the grain size and porosity. For applications, control of grain size and porosity is required. Pressure-assisted sintering techniques at relatively low temperatures meet these requirements. In this study,

Surface passivation of high purity granular metals: zinc, cadmium, lead

Directory of Open Access Journals (Sweden)

Pirozhenko L. A.

2017-10-01

Full Text Available For the high purity metals (99.9999%, such as zinc, cadmium, and lead, which are widely used as initial components in growing semiconductor and scintillation crystals (CdTe, CdZnTe, ZnSe, (Cd, Zn, Pb WO4, (Cd, Zn, Pb MoO4 et al., it is very important to ensure reliable protection of the surface from oxidation and adsorption of impurities from the atmosphere. The specific features of surface passivation of high purity cadmium, lead and zinc are not sufficiently studied and require specific methodologies for further studies. The use of organic solutions in the schemes of chemical passivation of the investigated metals avoids hydrolysis of the obtained protective films. The use of organic solvents with pure cation and anion composition as the washing liquid prevents chemisorption of ions present in the conventionally used distilled water. This keeps the original purity of the granular metals. Novel compositions of etchants and etching scheme providing simultaneous polishing and passivation of high purity granular Zn, Cd and Pb are developed. Chemical passivation allows storing metals in the normal atmospheric conditions for more than half a year for Zn and Cd and up to 30 days for Pb without changing the state of the surface. The use of the glycerol-DMF solution in the processes for obtaining Pb granules provides self-passivation of metal surfaces and eliminates the additional chemical processing while maintaining the quality of corrosion protection.

Event timing in high purity germanium coaxial detectors

International Nuclear Information System (INIS)

El-Ibiary, M.Y.

1979-08-01

The timing of gamma ray radiation in systems using high purity coaxial germanium detectors is analyzed and compared to that of systems using Ge(Li) detectors. The analysis takes into account the effect of the residual impurities on the electric field distribution, and hence on the rate of rise of the electrical pulses delivered to the timing module. Conditions under which the electric field distribution could lead to an improvement in timing performance, are identified. The results of the analysis confirm the experimental results published elsewhere and when compared with those for Ge(Li) detectors, which usually operate under conditions of charge carrier velocity saturation, confirm that high purity germanium detectors need not have inferior timing characteristics. A chart is given to provide a quantitative basis on which the trade off between the radius of the detector and its time resolution may be made

Electron drift time in silicon drift detectors: A technique for high precision measurement of electron drift mobility

International Nuclear Information System (INIS)

Castoldi, A.; Rehak, P.

1995-01-01

This paper presents a precise absolute measurement of the drift velocity and mobility of electrons in high resistivity silicon at room temperature. The electron velocity is obtained from the differential measurement of the drift time of an electron cloud in a silicon drift detector. The main features of the transport scheme of this class of detectors are: the high uniformity of the electron motion, the transport of the signal electrons entirely contained in the high-purity bulk, the low noise timing due to the very small anode capacitance (typical value 100 fF), and the possibility to measure different drift distances, up to the wafer diameter, in the same semiconductor sample. These features make the silicon drift detector an optimal device for high precision measurements of carrier drift properties. The electron drift velocity and mobility in a 10 kΩ cm NTD n-type silicon wafer have been measured as a function of the electric field in the range of possible operation of a typical drift detector (167--633 V/cm). The electron ohmic mobility is found to be 1394 cm 2 /V s. The measurement precision is better than 1%. copyright 1995 American Institute of Physics

Evaluation of purity with its uncertainty value in high purity lead stick by conventional and electro-gravimetric methods.

Science.gov (United States)

Singh, Nahar; Singh, Niranjan; Tripathy, S Swarupa; Soni, Daya; Singh, Khem; Gupta, Prabhat K

2013-06-26

A conventional gravimetry and electro-gravimetry study has been carried out for the precise and accurate purity determination of lead (Pb) in high purity lead stick and for preparation of reference standard. Reference materials are standards containing a known amount of an analyte and provide a reference value to determine unknown concentrations or to calibrate analytical instruments. A stock solution of approximate 2 kg has been prepared after dissolving approximate 2 g of Pb stick in 5% ultra pure nitric acid. From the stock solution five replicates of approximate 50 g have been taken for determination of purity by each method. The Pb has been determined as PbSO4 by conventional gravimetry, as PbO2 by electro gravimetry. The percentage purity of the metallic Pb was calculated accordingly from PbSO4 and PbO2. On the basis of experimental observations it has been concluded that by conventional gravimetry and electro-gravimetry the purity of Pb was found to be 99.98 ± 0.24 and 99.97 ± 0.27 g/100 g and on the basis of Pb purity the concentration of reference standard solutions were found to be 1000.88 ± 2.44 and 1000.81 ± 2.68 mg kg-1 respectively with 95% confidence level (k = 2). The uncertainty evaluation has also been carried out in Pb determination following EURACHEM/GUM guidelines. The final analytical results quantifying uncertainty fulfills this requirement and gives a measure of the confidence level of the concerned laboratory. Gravimetry is the most reliable technique in comparison to titremetry and instrumental method and the results of gravimetry are directly traceable to SI unit. Gravimetric analysis, if methods are followed carefully, provides for exceedingly precise analysis. In classical gravimetry the major uncertainties are due to repeatability but in electro-gravimetry several other factors also affect the final results.

Synthesis of High Purity Nonsymmetric Dialkylphosphinic Acid Extractants.

Science.gov (United States)

Wang, Junlian; Xie, Meiying; Liu, Xinyu; Xu, Shengming

2017-10-19

We present the synthesis of (2,3-dimethylbutyl)(2,4,4'-trimethylpentyl)phosphinic acid as an example to demonstrate a method for the synthesis of high purity nonsymmetric dialkylphosphinic acid extractants. Low toxic sodium hypophosphite was chosen as the phosphorus source to react with olefin A (2,3-dimethyl-1-butene) to generate a monoalkylphosphinic acid intermediate. Amantadine was adopted to remove the dialkylphosphinic acid byproduct, as only the monoalkylphosphinic acid can react with amantadine to form an amantadine∙mono-alkylphosphinic acid salt, while the dialkylphosphinic acid cannot react with amantadine due to its large steric hindrance. The purified monoalkylphosphinic acid was then reacted with olefin B (diisobutylene) to yield nonsymmetric dialkylphosphinic acid (NSDAPA). The unreacted monoalkylphosphinic acid can be easily removed by a simple base-acid post-treatment and other organic impurities can be separated out through the precipitation of the cobalt salt. The structure of the (2,3-dimethylbutyl)(2,4,4'-trimethylpentyl)phosphinic acid was confirmed by 31 P NMR, 1 H NMR, ESI-MS, and FT-IR. The purity was determined by a potentiometric titration method, and the results indicate that the purity can exceed 96%.

Extraction-spectrophotometric method for silicon determination in high-purity substances. 2. Silicon determination in cadmium

Energy Technology Data Exchange (ETDEWEB)

Yudelevich, I G; Shaburova, V P; Shamrina, L V [AN SSSR, Novosibirsk (USSR). Inst. Neorganicheskoj Khimii

1989-01-01

Cadmium extraction by tributyl phosphate and trialkylbenzylammonium chloride (TABAC) depending on acid (HCl, HI), extracting agent concentration, volume of aqueous and organic phases, number of extraction steps is investigated. On the basis of the obtained results the spectrophotometric method for silicon determination in cadmium and CdCl/sub 2/ using malachite green with preliminary extraction of the base by the TABAC from HCl solutions. The method detection limit is 3.9x10/sup -4/ % Si with respect to initial cadmium sample of 100 mg and 7.8x10/sup -5/ % with respect to 0.5 g of CdCl/sub 2/. The relative standard deviation is S/sub r/-0.07-0.13.

High purity materials as targets for radioisotope production: Needs ...

Indian Academy of Sciences (India)

Unknown

lity of high purity target materials, natural or enriched, are crucial for any successful radioisotope pro- gramme. Selection ... and blockages detection in buried pipelines are rendered ..... from reputed international suppliers with analysis report.

High purity radioactive beams at the bevalac

International Nuclear Information System (INIS)

Alonso, J.R.; Chatterjee, A.; Tobias, C.A.

1979-03-01

Peripheral nuclear fragmentation reactions of primary Bevalac heavy ion beams are used to produce secondary beams of radioactive nuclei. The large cross section and small deflection of the projectile fragments lead to high production and delivery efficiency for these beams. Dispersive beam transport allows good separation and purification of the desired secondary beams. 11 C and 19 Ne beams of high purity and good intensity (almost 0.2% of the primary beam current) are presently being used for biomedical experiments

X- and gamma-ray N+PP+ silicon detectors with high radiation resistance

International Nuclear Information System (INIS)

Petris, M.; Ruscu, R.; Moraru, R.; Cimpoca, V.

1998-01-01

We have investigated the use of p-type silicon detectors as starting material for X-and gamma-ray detectors because of several potential benefits it would bring: 1. high purity p-type silicon grown by the float-zone process exhibits better radial dopant uniformity than n-type float-zone silicon; 2. it is free of radiation damage due to the neutron transmutation doping process and behaves better in a radiation field because mainly acceptor like centers are created through the exposure and the bulk material type inversion does not occur as in the n-type silicon. But the p-type silicon, in combination with a passivating layer of silicon dioxide, leads to a more complex detector layout since the positive charge in the oxide causes an inversion in the surface layer under the silicon dioxide. Consequently, it would be expected that N + P diodes have a higher leakage current than P + N ones. All these facts have been demonstrated experimentally. These features set stringent requirements for the technology of p-type silicon detectors. Our work presents two new geometries and an improved technology for p-type high resistivity material to obtain low noise radiation detectors. Test structures were characterized before and after the gamma exposure with a cumulative dose in the range 10 4 - 5 x 10 6 rad ( 60 Co). Results indicate that proposed structures and their technology enable the development of reliable N + PP + silicon detectors. For some samples (0.8 - 12 mm 2 ), extremely low reverse currents were obtained and, in combination with a low noise charge preamplifier, the splitting of 241 Am X-ray lines was possible and also the Mn Kα line (5.9 keV) was extracted from the noise with a 1.9 keV FWHM at the room temperature. An experimental model of a nuclear probe based on these diodes was designed for X-ray detection applications. (authors)

A High-Purity Alumina for Use in Studies of Shock Loaded Samples

Science.gov (United States)

Lacina, David; Neel, Christopher

2017-06-01

We report the results of plate impact experiments on a potential new ``standard'' material, Coorstek Plasmapure-UC (99.9% purity) polycrystalline alumina, for use in non-conduction, impact environment, shock loading studies. This work was motivated by a desire to find a 99.9% purity alumina to replace the now unavailable Coors Vistal (99.9%) alumina, as it was hoped the Hugoniot elastic limit (HEL) of the new standard would match the 9-11 GPa value of Vistal. Shock response data, including the HEL, Hugoniot particle velocities, Hugoniot shock velocities, stress vs volume, and release wave speeds, was obtained up to 14 GPa. This data will be compared with Hugoniot curve data for other high purity alumina to contrast differences in the shock response, and is intended to be useful in impedance matching calculations. We will show that the HEL of Plasmapure-UC alumina is 5.5 GPa and speculate on causes for this lower than expected value. We will also explore why the elastic-plastic response for Plasmapure-UC alumina differs from what has been observed from other high purity alumina. The final result of this work is to recommend a well-characterized, lower purity alumina (Coorstek AD-995) as a potential new ``standard'' material.

Achievement Report for fiscal 1997 on developing a silicon manufacturing process with reduced energy consumption. Development of silicon mass-production manufacturing technology for solar cells; 1997 nendo energy shiyo gorika silicon seizo process kaihatsu. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1998-03-01

In order to manufacture silicon for solar cells, development is intended on a technology to manufacture silicon (SOG-Si) for solar cells by means of metallurgical methods using metallic silicon with purity generally available as an interim starting material. The silicon is required of p-type electric conductivity characteristics with specific resistance of 0.5 to 1.5 ohm per cm, to be sufficient even with 6-7N as compared to silicon for semiconductors (11-N), and to be low in cost. While the NEDO fluid bed process and the metallurgical NEDO direct reduction process have been developed based on the technology to manufacture silicon for semiconductors, the basic policy was established to develop a new manufacturing method using commercially available high-purity metallic silicon as an interim starting material, with an objective to achieve cost as low as capable of responding to small-quantity phase production for proliferation purpose. Removal of boron and phosphor has been the main issue in the development, whereas SOG-Si was manufactured in a laboratory scale by combining with the conventional component technologies in fiscal 1991 and 1992. The scale was expanded to 20 kg since fiscal 1993, and a five year plan starting fiscal 1996 was decided to develop the technology for industrial scale. Fiscal 1997 has promoted the development by using the 20-kg scale device, and introduced facilities to develop technology for mass-production scale. (NEDO)

Tests of ball bearing used in high-temperature and high-purity water

International Nuclear Information System (INIS)

Leng Chengmu; Hao Shouxin.

1987-01-01

According to the particular conditions and the operation environments in high-temperature and high-purity water, the test content and the measurement instrumentation for the ball bearing were defined. Through various tests, operational performances of the bearing have preliminarily been understood. It provided some useful information for the engineering application of the bearing

Radiochemical purity of Mo and Tc solution obtained after irradiation and dissolution of Mo-100-enriched and ultra-high-purity natural Mo disks

Energy Technology Data Exchange (ETDEWEB)

Tkac, Peter [Argonne National Lab. (ANL), Argonne, IL (United States); Gromov, Roman [Argonne National Lab. (ANL), Argonne, IL (United States); Chemerisov, Sergey D. [Argonne National Lab. (ANL), Argonne, IL (United States); Rotsch, David A. [Argonne National Lab. (ANL), Argonne, IL (United States); Vandegrift, George F. [Argonne National Lab. (ANL), Argonne, IL (United States)

2016-09-01

Four irradiations of ultra-high-purity natural Mo targets and one irradiation using 97.4% Mo-100-enriched material were performed. The purpose of these irradiations was to determine whether the presence of Sn stabilizer in the H₂O₂ used for the dissolution of sintered Mo disks can affect the radiochemical purity of the final K₂MoO₄ in 5M KOH solution. Results from radiochemical purity tests performed using thin-layer paper chromatography show that even 2– 3× excess of Sn-stabilized H₂O₂ typically used for dissolution of sintered Mo disks did not affect the radiochemical purity of the final product.

Fused salt processing of impure plutonium dioxide to high-purity plutonium metal

International Nuclear Information System (INIS)

Mullins, L.J.; Christensen, D.C.; Babcock, B.R.

1982-01-01

A process for converting impure plutonium dioxide (approx. 96% pure) to high-purity plutonium metal (>99.9%) was developed. The process consists of reducing the oxide to an impure plutonium metal intermediate with calcium metal in molten calcium chloride. The impure intermediate metal is cast into an anode and electrorefined to produce high-purity plutonium metal. The oxide reduction step is being done now on a 0.6-kg scale with the resulting yield being >99.5%. The electrorefining is being done on a 4.0-kg scale with the resulting yield being 80 to 85%. The purity of the product, which averages 99.98%, is essentially insensitive to the purity of the feed metal. The yield, however, is directly dependent on the chemical composition of the feed. To date, approximately 250 kg of impure oxide has been converted to pure metal by this processing sequence. The availability of impure plutonium dioxide, together with the need for pure plutonium metal, makes this sequence a valuable plutonium processing tool

Analysis technique of impurity in high purity deuterium by cryogenic gas-chromatography

International Nuclear Information System (INIS)

Zhou Junbo; Gao Liping

2007-01-01

A veracious and applicable quantitative analysis method of O 2 , N 2 and H 2 , HD in high purity deuterium by the chromatogram columniation filled with 5A molecular sieve and alumina was researched and constituted at natural temperature and 77 K, respectively. Minimum detecting limit of the present method is (150-200) x 10 -6 for H 2 and HD, and it can meet the need of quantitative analysis of the impurity during high purity deuterium preparation. (authors)

Hydrogen concentration and distribution in high-purity germanium crystals

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.; Luke, P.N.

1981-10-01

High-purity germanium crystals used for making nuclear radiation detectors are usually grown in a hydrogen ambient from a melt contained in a high-purity silica crucible. The benefits and problems encountered in using a hydrogen ambient are reviewed. A hydrogen concentration of about 2 x 10 15 cm -3 has been determined by growing crystals in hydrogen spiked with tritium and counting the tritium β-decays in detectors made from these crystals. Annealing studies show that the hydrogen is strongly bound, either to defects or as H 2 with a dissociation energy > 3 eV. This is lowered to 1.8 eV when copper is present. Etching defects in dislocation-free crystals grown in hydrogen have been found by etch stripping to have a density of about 1 x 10 7 cm -3 and are estimated to contain 10 8 H atoms each

Some aspects of ICP-AES analysis of high purity rare earths

International Nuclear Information System (INIS)

Murty, P.S.; Biswas, S.S.

1991-01-01

Inductively coupled plasma atomic emission spectrometry (ICP-AES) is a technique capable of giving high sensitivity in trace elemental analysis. While the technique possesses high sensitivity, it lacks high selectivity. Selectivity is important where substances emitting complex spectra are to be analysed for trace elements. Rare earths emit highly complex spectra in a plasma source and the determination of adjacent rare earths in a high purity rare earth matrix, with high sensitivity, is not possible due to the inadequate selectivity of ICP-AES. One approach that has yielded reasonably good spectral selectivity in the high purity rare earth analysis by ICP-AES is by employing a combination of wavelength modulation techniques and high resolution echelle grating. However, it was found that by using a high resolution monochromator senstitivities either comparable to or better than those reported by the wavelength modulation technique could be obtained. (author). 2 refs., 2 figs., 2 tabs

Removal of inclusions from silicon

Science.gov (United States)

Ciftja, Arjan; Engh, Thorvald Abel; Tangstad, Merete; Kvithyld, Anne; Øvrelid, Eivind Johannes

2009-11-01

The removal of inclusions from molten silicon is necessary to satisfy the purity requirements for solar grade silicon. This paper summarizes two methods that are investigated: (i) settling of the inclusions followed by subsequent directional solidification and (infiltration by ceramic foam filters. Settling of inclusions followed by directional solidification is of industrial importance for production of low-cost solar grade silicon. Filtration is reported as the most efficient method for removal of inclusions from the top-cut silicon scrap.

Isolation of high purity americium metal via distillation

Science.gov (United States)

Squires, Leah N.; King, James A.; Fielding, Randall S.; Lessing, Paul

2018-03-01

Pure americium metal is a crucial component for the fabrication of transmutation fuels. Unfortunately, americium in pure metal form is not available; however, a number of mixed metals and mixed oxides that include americium are available. In this manuscript a method is described to obtain high purity americium metal from a mixture of americium and neptunium metals with lead impurity via distillation.

Ion-exchange preparation of high-purity vanadium acid from industrial liquors

International Nuclear Information System (INIS)

Sajdakhmedov, U.A.; Arslanov, Sh.S.; Vulikh, A.I.

1994-01-01

The results of investigations on production of special-purity vanadium acid and vanadium oxide directly from process solutions (technical grade liquors) using ionites are presented. Potentiality of thorough purification of vanadium(5) oxide, when producing vanadium acid on the KU-2 cationite with subsequent purification on anionite, is shown. On the basis of the results obtained a principle flowsheet of ion-exchange production of high-purity vanadium(5) oxide from industrial liquors has been developed. 2 refs.; 1 fig.; 4 tabs

Corrosion of high purity Fe-Cr-Ni alloys in 13 N boiling nitric acid

International Nuclear Information System (INIS)

Ohta, Joji; Mayuzumi, Masami; Kusanagi, Hideo; Takaku, Hiroshi

1998-01-01

Corrosion in boiling nitric acid was investigated for high purity Fe-18%Cr-12%Ni alloys and type 304L stainless steels (SS). Owing to very low impurity concentration, the solution treated high purity alloys show almost no intergranular corrosion while the type 304L SS show severe intergranular corrosion. Both in the high purity alloys and type 304L SS, aging treatments ranging from 873 K to 1073 K for 1 h enhance intergranular corrosion. During the aging treatments, impurities should be segregated to the grain boundaries. The corrosion behaviors were discussed from a standpoint of impurity segregation to grain boundaries. This study is of importance for purex reprocessing of spent fuels

TIGRESS highly-segmented high-purity germanium clover detector

Science.gov (United States)

Scraggs, H. C.; Pearson, C. J.; Hackman, G.; Smith, M. B.; Austin, R. A. E.; Ball, G. C.; Boston, A. J.; Bricault, P.; Chakrawarthy, R. S.; Churchman, R.; Cowan, N.; Cronkhite, G.; Cunningham, E. S.; Drake, T. E.; Finlay, P.; Garrett, P. E.; Grinyer, G. F.; Hyland, B.; Jones, B.; Leslie, J. R.; Martin, J.-P.; Morris, D.; Morton, A. C.; Phillips, A. A.; Sarazin, F.; Schumaker, M. A.; Svensson, C. E.; Valiente-Dobón, J. J.; Waddington, J. C.; Watters, L. M.; Zimmerman, L.

2005-05-01

The TRIUMF-ISAC Gamma-Ray Escape-Suppressed Spectrometer (TIGRESS) will consist of twelve units of four high-purity germanium (HPGe) crystals in a common cryostat. The outer contacts of each crystal will be divided into four quadrants and two lateral segments for a total of eight outer contacts. The performance of a prototype HPGe four-crystal unit has been investigated. Integrated noise spectra for all contacts were measured. Energy resolutions, relative efficiencies for both individual crystals and for the entire unit, and peak-to-total ratios were measured with point-like sources. Position-dependent performance was measured by moving a collimated source across the face of the detector.

Twin photon pairs in a high-Q silicon microresonator

Energy Technology Data Exchange (ETDEWEB)

Rogers, Steven; Lu, Xiyuan [Department of Physics and Astronomy, University of Rochester, Rochester, New York 14627 (United States); Jiang, Wei C. [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Lin, Qiang, E-mail: qiang.lin@rochester.edu [Institute of Optics, University of Rochester, Rochester, New York 14627 (United States); Department of Electrical and Computer Engineering, University of Rochester, Rochester, New York 14627 (United States)

2015-07-27

We report the generation of high-purity twin photon pairs through cavity-enhanced non-degenerate four-wave mixing (FWM) in a high-Q silicon microdisk resonator. Twin photon pairs are created within the same cavity mode and are consequently expected to be identical in all degrees of freedom. The device is able to produce twin photons at telecommunication wavelengths with a pair generation rate as large as (3.96 ± 0.03) × 10{sup 5} pairs/s, within a narrow bandwidth of 0.72 GHz. A coincidence-to-accidental ratio of 660 ± 62 was measured, the highest value reported to date for twin photon pairs, at a pair generation rate of (2.47 ± 0.04) × 10{sup 4} pairs/s. Through careful engineering of the dispersion matching window, we have reduced the ratio of photons resulting from degenerate FWM to non-degenerate FWM to less than 0.15.

High purity neodymium acetate from mixed rare earth carbonates

International Nuclear Information System (INIS)

Queiroz, Carlos A. da Silva; Rocha, Soraya M. Rizzo da; Vasconcellos, Mari E. de; Lobo, Raquel M.; Seneda, Jose A.; Pedreira, Walter dos R.

2011-01-01

A simple and economical chemical process for obtaining high purity neodymium acetate is discussed. The raw material in the form rare earth carbonate is produced industrially from the chemical treatment of Brazilian monazite. Ion exchange chromatography technique with a strong cationic resin, proper to water treatment, and without the use of retention ions was used for the fractionating of the rare earth elements (REE). In this way, it was possible to obtain 99.9% pure Nd 2 O 3 in yields greater than or equal 80%, with the elution of the REE using ammonium salt of ethylenediaminetetraacetic acid (EDTA) solution in pH controlled. The complex of EDTA-neodymium was transformed into neodymium oxide, which was subsequently dissolved in acetic acid to obtain the neodymium acetates. Molecular absorption spectrophotometry was used to monitor the neodymium content during the process and sector field inductively coupled plasma mass spectrometry was used to certify the purity of the neodymium acetates. The typical neodymium acetates obtained contain the followings contaminants in μg g -1 : Sc(5.1); Y (0.9); La (1.0); Ce (6.1); Pr (34,4); Sm (12.8); Eu (1.1); Gd (15.4); Tb (29.3); Dy (5.2), Ho(7.4); Er (14.6); Tm (0.3); Yb (2.5); Lu (1.0). The high purity neodymium acetates obtained from this procedure have been applied, replacing the imported product, in research and development area on rare earth catalysts. (author)

Scalable preparation of high purity rutin fatty acid esters following enzymatic synthesis

DEFF Research Database (Denmark)

Lue, Bena-Marie; Guo, Zheng; Xu, Xuebing

2010-01-01

Investigations into expanded uses of modified flavonoids are often limited by the availability of these high purity compounds. As such, a simple, effective and relatively fast method for isolation of gram quantities of both long and medium chain fatty acid esters of rutin following scaled......-up biosynthesis reactions was established. Acylation reactions of rutin and palmitic or lauric acids were efficient in systems containing dried acetone and molecular sieves, yielding from 70–77% bioconversion after 96 h. Thereafter, high purity isolates (>97%) were easily obtained in significant quantities...

Synthesis and investigation of silicon carbide nanowires by HFCVD ...

Indian Academy of Sciences (India)

Silicon carbide (SiC) nanowire has been fabricated by hot filament chemical vapour .... −5. Torr by mechanical and dif- fusion vacuum pumps, then high purity H2 gas was fed into it. ... to standard PDF card numbers of 01-074-2307 and 01-.

Solar Grade Silicon from Agricultural By-products

Energy Technology Data Exchange (ETDEWEB)

Laine, Richard M

2012-08-20

In this project, Mayaterials developed a low cost, low energy and low temperature method of purifying rice hull ash to high purity (5-6Ns) and converting it by carbothermal reduction to solar grade quality silicon (Sipv) using a self-designed and built electric arc furnace (EAF). Outside evaluation of our process by an independent engineering firm confirms that our technology greatly lowers estimated operating expenses (OPEX) to $5/kg and capital expenses (CAPEX) to $24/kg for Sipv production, which is well below best-in-class plants using a Siemens process approach (OPEX of 14/kg and CAPEX of $87/kg, respectively). The primary limiting factor in the widespread use of photovoltaic (PV) cells is the high cost of manufacturing, compared to more traditional sources to reach 6 g Sipv/watt (with averages closer to 8+g/watt). In 2008, the spot price of Sipv rose to $450/kg. While prices have since dropped to a more reasonable $25/kg; this low price level is not sustainable, meaning the longer-term price will likely return to $35/kg. The 6-8 g Si/watt implies that the Sipv used in a module will cost $0.21-0.28/watt for the best producers (45% of the cost of a traditional solar panel), a major improvement from the cost/wafer driven by the $50/kg Si costs of early 2011, but still a major hindrance in fulfilling DOE goal of lowering the cost of solar energy below $1/watt. The solar cell industry has grown by 40% yearly for the past eight years, increasing the demand for Sipv. As such, future solar silicon price spikes are expected in the next few years. Although industry has invested billions of dollars to meet this ever-increasing demand, the technology to produce Sipv remains largely unchanged requiring the energy intensive, and chlorine dependent Siemens process or variations thereof. While huge improvements have been made, current state-of-the-art industrial plant still use 65 kWh/kg of silicon purified. Our technology offers a key distinction to other technologies as it

Process for making silicon

Science.gov (United States)

Levin, Harry (Inventor)

1987-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Demands made on high-purity copper for special purposes

International Nuclear Information System (INIS)

Roettges, D.

1977-01-01

The properties (electrical resistivity, residual impurities) of high-purity copper produced on a technical scale are reported as well as its practical applications. The paper discusses a high-oxygen copper (SV) with low residual resistivity at low temperatures and an oxygen-free (hydrogen-stable) copper (BE electronic) with low gas content. The SV quality has been specially developed for use as stabilizer in superconductors while the BE quality is used in high and ultrahigh vacuum. (GSC) [de

Neutron activation analysis of high purity substances

International Nuclear Information System (INIS)

Gil'bert, Eh.N.

1987-01-01

Peculiarities of neutron-activation analysis (NAA) of high purity substances are considered. Simultaneous determination of a wide series of elements, high sensitivity (the lower bound of determined contents 10 -9 -10 -10 %), high selectivity and accuracy (Sr=0.10-0.15, and may be decreased up to 0.001), possibility of analysis of the samples from several micrograms to hundreds of grams, simplicity of calibration may be thought NAA advantages. Questions of accounting of NAA systematic errors associated with the neutron flux screening by the analysed matrix and with production of radionuclides of determined elements from accompanying elements according to concurrent nuclear reactions, as well as accounting of errors due to self-absorption of recorded radiation by compact samples, are considered

High-power laser diodes with high polarization purity

Science.gov (United States)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Apparatus for making molten silicon

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

Electrically active defects in solar grade multicrystalline silicon

DEFF Research Database (Denmark)

Dahl, Espen

2013-01-01

Shortage in high purity silicon feedstock, as a result of the formidable increased demand for solar cell devices during the last two decades, can be mitigated by the introduction of cheaper feedstock of solar grade (So-G) quality. Silicon produced through the metallurgical process route has shown...... the potential to be such a feedstock. However, this feedstock has only few years of active commercial history and the detailed understanding of the nature of structural defects in this material still has fundamental shortcomings. In this thesis the electrical activity of structural defects, commonly associated...

Spectroscopic Determination of Trace Contaminants in High Purity Oxygen

Science.gov (United States)

Hornung, Steven D.

2011-01-01

Oxygen used for extravehicular activities (EVA) must be free of contaminants because a difference in a few tenths of a percent of argon or nitrogen content can mean significant reduction in available EVA time. These inert gases build up in the extravehicular mobility unit because they are not metabolized or scrubbed from the atmosphere. Measurement of oxygen purity above 99.5% is problematic, and currently only complex instruments such as gas chromatographs or mass spectrometers are used for these determinations. Because liquid oxygen boil-off from the space shuttle will no longer be available to supply oxygen for EVA use, other concepts are being developed to produce and validate high purity oxygen from cabin air aboard the International Space Station. A prototype optical emission technique capable of detecting argon and nitrogen below 0.1% in oxygen was developed at White Sands Test Facility. This instrument uses a glow discharge in reduced pressure gas to produce atomic emission from the species present. Because the atomic emission lines from oxygen, nitrogen, and argon are discrete and in many cases well-separated, trace amounts of argon and nitrogen can be detected in the ultraviolet and visible spectrum. This is a straightforward, direct measurement of the target contaminants and may lend itself to a device capable of on-orbit verification of oxygen purity. System design and optimized measurement parameters are presented.

High-purity Cu nanocrystal synthesis by a dynamic decomposition method

Science.gov (United States)

Jian, Xian; Cao, Yu; Chen, Guozhang; Wang, Chao; Tang, Hui; Yin, Liangjun; Luan, Chunhong; Liang, Yinglin; Jiang, Jing; Wu, Sixin; Zeng, Qing; Wang, Fei; Zhang, Chengui

2014-12-01

Cu nanocrystals are applied extensively in several fields, particularly in the microelectron, sensor, and catalysis. The catalytic behavior of Cu nanocrystals depends mainly on the structure and particle size. In this work, formation of high-purity Cu nanocrystals is studied using a common chemical vapor deposition precursor of cupric tartrate. This process is investigated through a combined experimental and computational approach. The decomposition kinetics is researched via differential scanning calorimetry and thermogravimetric analysis using Flynn-Wall-Ozawa, Kissinger, and Starink methods. The growth was found to be influenced by the factors of reaction temperature, protective gas, and time. And microstructural and thermal characterizations were performed by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and differential scanning calorimetry. Decomposition of cupric tartrate at different temperatures was simulated by density functional theory calculations under the generalized gradient approximation. High crystalline Cu nanocrystals without floccules were obtained from thermal decomposition of cupric tartrate at 271°C for 8 h under Ar. This general approach paves a way to controllable synthesis of Cu nanocrystals with high purity.

Characterization of a high-purity germanium detector for small-animal SPECT.

Science.gov (United States)

Johnson, Lindsay C; Campbell, Desmond L; Hull, Ethan L; Peterson, Todd E

2011-09-21

We present an initial evaluation of a mechanically cooled, high-purity germanium double-sided strip detector as a potential gamma camera for small-animal SPECT. It is 90 mm in diameter and 10 mm thick with two sets of 16 orthogonal strips that have a 4.5 mm width with a 5 mm pitch. We found an energy resolution of 0.96% at 140 keV, an intrinsic efficiency of 43.3% at 122 keV and a FWHM spatial resolution of approximately 1.5 mm. We demonstrated depth-of-interaction estimation capability through comparison of pinhole acquisitions with a point source on and off axes. Finally, a flood-corrected flood image exhibited a strip-level uniformity of less than 1%. This high-purity germanium offers many desirable properties for small-animal SPECT.

Wet routes of high purity BaTiO3 nanopowders

International Nuclear Information System (INIS)

Wang Liqiu; Liu Liang; Xue Dongfeng; Kang Hongmin; Liu Changhou

2007-01-01

High purity BaTiO 3 nanopowders were prepared in wet routes through stearic acid gel (SAG) and acetic acid gel (AAG) techniques, respectively. BaTiO 3 samples were characterized by X-ray diffraction, transmission electron microscope, Fourier transform infrared spectrometry, X-ray fluorescence spectrometry, and thermal gravimetric analysis. The present results indicate that both methods have a similar reaction process during calcination, while BaTiO 3 crystallites were initially formed at 550 deg. C by SAG and 800 deg. C by AAG. Both methods could produce BaTiO 3 powders with a cubic perovskite structure, while they had different grain size distributions within 25-50 nm for SAG and 50-80 nm for AAG. BaTiO 3 samples prepared by SAG had a lower agglomeration than those by AAG. SAG has shown many distinctive advantages in the preparation of high purity BaTiO 3 nanopowders, without Ba and Ti losses and hazardous wastes

Development of high purity large forgings for nuclear power plants

International Nuclear Information System (INIS)

Tanaka, Yasuhiko; Sato, Ikuo

2011-01-01

The recent increase in the size of energy plants has been supported by the development of manufacturing technology for high purity large forgings for the key components of the plant. To assure the reliability and performance of the large forgings, refining technology to make high purity steels, casting technology for gigantic ingots, forging technology to homogenize the material and consolidate porosity are essential, together with the required heat treatment and machining technologies. To meet these needs, the double degassing method to reduce impurities, multi-pouring methods to cast the gigantic ingots, vacuum carbon deoxidization, the warm forging process and related technologies have been developed and further improved. Furthermore, melting facilities including vacuum induction melting and electro slag re-melting furnaces have been installed. By using these technologies and equipment, large forgings have been manufactured and shipped to customers. These technologies have also been applied to the manufacture of austenitic steel vessel components of the fast breeder reactors and components for fusion experiments.

Development of high purity large forgings for nuclear power plants

Science.gov (United States)

Tanaka, Yasuhiko; Sato, Ikuo

2011-10-01

The recent increase in the size of energy plants has been supported by the development of manufacturing technology for high purity large forgings for the key components of the plant. To assure the reliability and performance of the large forgings, refining technology to make high purity steels, casting technology for gigantic ingots, forging technology to homogenize the material and consolidate porosity are essential, together with the required heat treatment and machining technologies. To meet these needs, the double degassing method to reduce impurities, multi-pouring methods to cast the gigantic ingots, vacuum carbon deoxidization, the warm forging process and related technologies have been developed and further improved. Furthermore, melting facilities including vacuum induction melting and electro slag re-melting furnaces have been installed. By using these technologies and equipment, large forgings have been manufactured and shipped to customers. These technologies have also been applied to the manufacture of austenitic steel vessel components of the fast breeder reactors and components for fusion experiments.

Process for the production of high purity deuterium

International Nuclear Information System (INIS)

Arrathoon, R.

1977-01-01

A process for the electrolysis of heavy water which results in the production of high purity deuterium without periodic replenishment of the electrolyte with additional deuterated compounds is defined. Electrolysis is effected through the use of an inexpensive cation-action permselective membrane which is essentially a solid polymer electrolyte and which is capable of automatically separating the evolved deuterium and oxygen gas. This cation-active permselective membrane does not introduce any intrinsic impurities or tritium contamination in the generated deuterium gas, does not require periodic revitalization with deuterated compounds or other chemical compounds, and is characterized by an unusually high electrical efficiency

Corrosion behavior of high purity Fe-Cr-Ni alloys in trans-passive condition

International Nuclear Information System (INIS)

Mayuzumi, Masami; Ohta, Jyoji; Kako, Kenji

1998-01-01

The corrosion behavior of high-purity (99.99%) Fe-Cr-Ni alloys was investigated in 13 N nitric acid with/without Ce 4+ ions to clarify the effect of impurities on the trans-passive corrosion of stainless steel. The following results were obtained. (1) Almost no intergranular corrosion was observed in the high-purity alloys, although the corrosion rate of the matrix region was nearly the same as that of a commercial stainless steel with the same Cr and Ni content. (2) Due to the improved intergranular corrosion resistance, the effect of the purification became significant in the corrosion condition with the grain-separation being predominant. (3) The high-purity alloys showed higher susceptivility to intergranular corrosion with aging treatment between 873 K and 1073 K. Although the sulfuric acid/copper sulfate test suggested the formation of Cr-depleted zones, a grain boundary micro-analysis using a FETEM with an EDX did not reveal any change in Cr content or impurity segregain along the grain boundaries. The mechanism of corrosion enhancement resulting from the aging treatment remains nuclear. (author)

The European Expression Of Interest For High Purity U-233 Materials

Energy Technology Data Exchange (ETDEWEB)

Giaquinto, Joseph M. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States); Younkin, James R. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

2017-04-01

The purpose of this letter report is to document the response for an Expression of Interest (EOI) sent to the European Safeguards and research and development (R&D) scientific communities for the distribution of small amounts of high purity ²³³U materials for use in safeguards, nonproliferation, and basic R&D in the nuclear disciplines. The intent for the EOI was to gauge the level of international interest for these materials from government and research institutions with programmatic missions in the nuclear security or nuclear R&D arena. The information contained herein is intended to provide information to assist key decision makers in DOE as to the ultimate disposition path for the high purity materials currently being recovered at Oak Ridge National Laboratory (ORNL) and only those items for which there is no United States (U.S.) sponsor identified.

Scalable Upcycling Silicon from Waste Slicing Sludge for High-performance Lithium-ion Battery Anodes

International Nuclear Information System (INIS)

Bao, Qi; Huang, Yao-Hui; Lan, Chun-Kai; Chen, Bing-Hong; Duh, Jenq-Gong

2015-01-01

Silicon (Si) has been perceived as a promising next-generation anode material for lithium ion batteries (LIBs) due to its superior theoretical capacity. Despite the natural abundance of this element on Earth, large-scale production of high-purity Si nanomaterials in a green and energy-efficient way is yet to become an industrial reality. Spray-drying methods have been exploited to recover Si particles from low-value sludge produced in the photovoltaic industry, providing a massive and cost-effective Si resource for fabricating anode materials. To address such drawbacks like volume expansion, low electrical and Li + conductivity and unstable solid electrolyte interphase (SEI) formation, the recycled silicon particles have been downsized into nanoscale and shielded by a highly conductive and protective graphene multilayer through high energy ball milling. Cyclic voltammetry and electrochemical impedance spectroscopy measurements have revealed that the graphene wrapping and size reduction approach have significantly improved the electrochemical performance. It delivers an excellent reversible capacity of 1,138 mA h g −1 and a long cycle life with 73% capacity retention over 150 cycles at a high current of 450 mA g −1 . The plentiful waste conversion methodology also provides considerable opportunities for developing additional rechargeable devices, ceramic, powder metallurgy and silane/siloxane products

Preparation of uranium-plutonium mixed nitride pellets with high purity

International Nuclear Information System (INIS)

Arai, Yasuo; Shiozawa, Ken-ichi; Ohmichi, Toshihiko

1992-01-01

Uranium-plutonium mixed nitride pellets have been prepared in the gloveboxes with high purity Ar gas atmosphere. Carbothermic reduction of the oxides in N 2 -H 2 mixed gas stream was adopted for synthesizing mixed nitride. Sintering was carried out in various conditions and the effect on the pellet characteristics was investigated. (author)

Neutron irradiation induced amorphization of silicon carbide

International Nuclear Information System (INIS)

Snead, L.L.; Hay, J.C.

1998-01-01

This paper provides the first known observation of silicon carbide fully amorphized under neutron irradiation. Both high purity single crystal hcp and high purity, highly faulted (cubic) chemically vapor deposited (CVD) SiC were irradiated at approximately 60 C to a total fast neutron fluence of 2.6 x 10 25 n/m 2 . Amorphization was seen in both materials, as evidenced by TEM, electron diffraction, and x-ray diffraction techniques. Physical properties for the amorphized single crystal material are reported including large changes in density (-10.8%), elastic modulus as measured using a nanoindentation technique (-45%), hardness as measured by nanoindentation (-45%), and standard Vickers hardness (-24%). Similar property changes are observed for the critical temperature for amorphization at this neutron dose and flux, above which amorphization is not possible, is estimated to be greater than 130 C

Neutron activation analysis of high purity tellurium

International Nuclear Information System (INIS)

Gil'bert, Eh.N.; Verevkin, G.V.; Obrazovskij, E.G.; Shatskaya, S.S.

1980-01-01

A scheme of neutron activation analysis of high purity tellurium is developed. Weighed amount of Te (0.5 g) is irradiated for 20-40 hr in the flux of 2x10 13 neutron/(cm 2 xs). After decomposition of the sample impurities of gold and palladium are determined by the extraction with organic sulphides. Tellurium separation from the remaining impurities is carried out by the extraction with monothiobenzoic acid from weakly acidic HCl solutions in the presence of iodide-ions, suppressing silver extraction. Remaining impurity elements in the refined product are determined γ-spectrometrically. The method allows to determine 34 impurities with determination limits 10 -6 -10 -11 g

Neutron activation analysis of high-purity zinc

International Nuclear Information System (INIS)

Khodzhamberdyeva, A.A.; Usmanova, M.M.; Gil'bert, Eh.N.; Ivanov, I.M.; Yankovskaya, T.A.; Kholyavko, E.P.

1987-01-01

The methods of neutron activation analysis of high-purity zinc with preliminary separation of the zinc base using extraction by trialkylbenzylammonium rhodanide in carbon tetrachloride from 0.5-2.0 M nitric acid solutions is developed. Only rhenium is quantitatively extracted together with zinc. Gold, iridium and molybdenum are extracted to 50-60%, and selenium - to 20%. The Na, K, La, Cr, Sc, Co, Cs, Rb, Fe, Zr, Sn, Te, As, Cd, Hf, W, Sb, Sm impurities remain in the aqueous phase. The methods permits to determine the impurities above with detection limits from 1x10 -6 to 4x10 -11 g

Flat-plate solar array project. Volume 3: Silicon sheet: Wafers and ribbons

Science.gov (United States)

Briglio, A.; Dumas, K.; Leipold, M.; Morrison, A.

1986-01-01

The primary objective of the Silicon Sheet Task of the Flat-Plate Solar Array (FSA) Project was the development of one or more low cost technologies for producing silicon sheet suitable for processing into cost-competitive solar cells. Silicon sheet refers to high purity crystalline silicon of size and thickness for fabrication into solar cells. Areas covered in the project were ingot growth and casting, wafering, ribbon growth, and other sheet technologies. The task made and fostered significant improvements in silicon sheet including processing of both ingot and ribbon technologies. An additional important outcome was the vastly improved understanding of the characteristics associated with high quality sheet, and the control of the parameters required for higher efficiency solar cells. Although significant sheet cost reductions were made, the technology advancements required to meet the task cost goals were not achieved.

Creating high-purity angular-momentum-state Rydberg atoms by a pair of unipolar laser pulses

Science.gov (United States)

Xin, PeiPei; Cheng, Hong; Zhang, ShanShan; Wang, HanMu; Xu, ZiShan; Liu, HongPing

2018-04-01

We propose a method of producing high-purity angular-momentum-state Rydberg atoms by a pair of unipolar laser pulses. The first positive-polarity optical half-cycle pulse is used to prepare an excited-state wave packet while the second one is less intense, but with opposite polarity and time delayed, and is employed to drag back the escaping free electron and clip the shape of the bound Rydberg wave packet, selectively increasing or decreasing a fraction of the angular-momentum components. An intelligent choice of laser parameters such as phase and amplitude helps us to control the orbital-angular-momentum composition of an electron wave packet with more facility; thus, a specified angular-momentum state with high purity can be achieved. This scheme of producing high-purity angular-momentum-state Rydberg atoms has significant application in quantum-information processing.

A green preparation of Mn-based product with high purity from low-grade rhodochrosite

Science.gov (United States)

Lian, F.; Ma, L.; Chenli, Z.; Mao, L.

2018-01-01

The low-grade rhodochrosite, the main resources for exploitation and applications in China, contains multiple elements such as iron, silicon, calcium and magnesium. So the conventional preparation of manganese sulphate and manganese oxide with high purity from electrolytic product is characterized by long production-cycle, high-resource input and high-pollution discharge. In our work, a sustainable preparation approach of high pure MnSO4 solution and Mn3O4 was studied by employing low-grade rhodochrosite (13.86%) as raw material. The repeated leaching of rhodochrosite with sulphuric acid was proposed in view of the same ion effect, in order to improve the solubility of Mn2+ and inhibit the dissolution of the impurities Ca2+ and Mg2+. With the aid of theoretical calculation, BaF2 was chosen to remove Ca2+ and Mg2+ completely in the process of purifying. The results showed that the impurities such as Ca2+, Mg2+, Na+ were decreased to less than 20ppm, and the Ni- and Fe- impurities were decreased to less than 1ppm, which meets the standards of high pure reagent for energy and electronic materials. The extraction ratio and the recovery ratio of manganese reached 94.3% and 92.7%, respectively. Moreover, the high pure Mn3O4 was one-step synthesized via the oxidation of MnSO4 solution with the ratios of OH-/Mn2+=2 and Mn2+/H2O2=1.03, and the recovery rate of manganese reaches 99%.

Effect of the microstructure on electrical properties of high-purity germanium

Science.gov (United States)

Podkopaev, O. I.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.

2013-05-01

The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.

High-precision efficiency calibration of a high-purity co-axial germanium detector

Energy Technology Data Exchange (ETDEWEB)

Blank, B., E-mail: blank@cenbg.in2p3.fr [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Souin, J.; Ascher, P.; Audirac, L.; Canchel, G.; Gerbaux, M.; Grévy, S.; Giovinazzo, J.; Guérin, H.; Nieto, T. Kurtukian; Matea, I. [Centre d' Etudes Nucléaires de Bordeaux Gradignan, UMR 5797, CNRS/IN2P3, Université de Bordeaux, Chemin du Solarium, BP 120, 33175 Gradignan Cedex (France); Bouzomita, H.; Delahaye, P.; Grinyer, G.F.; Thomas, J.C. [Grand Accélérateur National d' Ions Lourds, CEA/DSM, CNRS/IN2P3, Bvd Henri Becquerel, BP 55027, F-14076 CAEN Cedex 5 (France)

2015-03-11

A high-purity co-axial germanium detector has been calibrated in efficiency to a precision of about 0.15% over a wide energy range. High-precision scans of the detector crystal and γ-ray source measurements have been compared to Monte-Carlo simulations to adjust the dimensions of a detector model. For this purpose, standard calibration sources and short-lived online sources have been used. The resulting efficiency calibration reaches the precision needed e.g. for branching ratio measurements of super-allowed β decays for tests of the weak-interaction standard model.

High purity liquid phase epitaxial gallium arsenide nuclear radiation detector

International Nuclear Information System (INIS)

Alexiev, D.; Butcher, K.S.A.

1991-11-01

Surface barrier radiation detector made from high purity liquid phase epitaxial gallium arsenide wafers have been operated as X- and γ-ray detectors at various operating temperatures. Low energy isotopes are resolved including 241 Am at 40 deg C. and the higher gamma energies of 235 U at -80 deg C. 15 refs., 1 tab., 6 figs

Vertical integration of high-Q silicon nitride microresonators into silicon-on-insulator platform.

Science.gov (United States)

Li, Qing; Eftekhar, Ali A; Sodagar, Majid; Xia, Zhixuan; Atabaki, Amir H; Adibi, Ali

2013-07-29

We demonstrate a vertical integration of high-Q silicon nitride microresonators into the silicon-on-insulator platform for applications at the telecommunication wavelengths. Low-loss silicon nitride films with a thickness of 400 nm are successfully grown, enabling compact silicon nitride microresonators with ultra-high intrinsic Qs (~ 6 × 10(6) for 60 μm radius and ~ 2 × 10(7) for 240 μm radius). The coupling between the silicon nitride microresonator and the underneath silicon waveguide is based on evanescent coupling with silicon dioxide as buffer. Selective coupling to a desired radial mode of the silicon nitride microresonator is also achievable using a pulley coupling scheme. In this work, a 60-μm-radius silicon nitride microresonator has been successfully integrated into the silicon-on-insulator platform, showing a single-mode operation with an intrinsic Q of 2 × 10(6).

Recycling of silicon: from industrial waste to biocompatible nanoparticles for nanomedicine

Science.gov (United States)

Kozlov, N. K.; Natashina, U. A.; Tamarov, K. P.; Gongalsky, M. B.; Solovyev, V. V.; Kudryavtsev, A. A.; Sivakov, V.; Osminkina, L. A.

2017-09-01

The formation of photoluminescent porous silicon (PSi) nanoparticles (NPs) is usually based on an expensive semiconductor grade wafers technology. Here, we report a low-cost method of PSi NPs synthesis from the industrial silicon waste remained after the wafer production. The proposed method is based on metal-assisted wet-chemical etching (MACE) of the silicon surface of cm-sized metallurgical grade silicon stones which leads to a nanostructuring of the surface due to an anisotropic etching, with subsequent ultrasound fracturing in water. The obtained PSi NPs exhibit bright red room temperature photoluminescence (PL) and demonstrate similar microstructure and physical characteristics in comparison with the nanoparticles synthesized from semiconductor grade Si wafers. PSi NPs prepared from metallurgical grade silicon stones, similar to silicon NPs synthesized from high purity silicon wafer, show low toxicity to biological objects that open the possibility of using such type of NPs in nanomedicine.

Native oxidation of ultra high purity Cu bulk and thin films

International Nuclear Information System (INIS)

Iijima, J.; Lim, J.-W.; Hong, S.-H.; Suzuki, S.; Mimura, K.; Isshiki, M.

2006-01-01

The effect of microstructure and purity on the native oxidation of Cu was studied by using angle-resolved X-ray photoelectron spectroscopy (AR-XPS) and spectroscopic ellipsometry (SE). A high quality copper film prepared by ion beam deposition under a substrate bias voltage of -50 V (IBD Cu film at V s = -50 V) showed an oxidation resistance as high as an ultra high purity copper (UHP Cu) bulk, whereas a Cu film deposited without substrate bias voltage (IBD Cu film at V s = 0 V) showed lower oxidation resistance. The growth of Cu 2 O layer on the UHP Cu bulk and both types of the films obeyed in principle a logarithmic rate law. However, the growth of oxide layer on the IBD Cu films at V s = 0 and -50 V deviated upward from the logarithmic rate law after the exposure time of 320 and 800 h, respectively. The deviation from the logarithmic law is due to the formation of CuO on the Cu 2 O layer after a critical time

Deuterium permeation and diffusion in high-purity beryllium

International Nuclear Information System (INIS)

Abramov, E.; Riehm, M.P.; Thompson, D.A.; Smeltzer, W.W.

1990-01-01

The permeation rate of deuterium through high-purity beryllium membranes was measured using the gas-driven permeation technique. The time-dependent and the steady-state deuterium flux data were analyzed and the effective diffusivities of the samples were determined. Using multilayer permeation theory the effects of surface oxide were eliminated and the diffusion coefficients of the bulk beryllium determined. The diffusion parameters obtained for the extra-grade beryllium samples (99.8%) are D 0 =6.7x10 -9 m 2 /s and E D =28.4 kJ/mol. For the high-grade beryllium samples (99%) the parameters are D 0 =8.0x10 -9 m 2 /s and E D =35.1 kJ/mol. (orig.)

State-of-the-art in analytical characterization of high purity solid ...

Indian Academy of Sciences (India)

Facilities and some results of several spectroscopic methods which have potential applications in the field of analysis of solid high purity substances and which have been elaborated in Russia, will be discussed in this paper. Laser nondispersive atomic fluorescence method with glow discharge cathode sputtering atomiser, ...

Fabrication of novel cryomill for synthesis of high purity metallic nanoparticles

Science.gov (United States)

Kumar, Nirmal; Biswas, Krishanu

2015-08-01

The successful preparation of free standing metal nanoparticles with high purity in bulk quantity is the pre-requisite for any potential application. This is possible by using ball milling at cryogenic temperature. However, the most of ball mills available in the market do not allow preparing high purity metal nanoparticles by this route. In addition, it is not possible to carry out in situ measurements of process parameters as well as diagnostic of the process. In the present investigation, we present a detailed study on the fabrication of a cryomill, which is capable of avoiding contaminations in the product. It also provides in situ measurements and diagnostic of the low temperature milling process. Online monitoring of the milling temperature and observation of ball motion are the important aspects in the newly designed mill. The nanoparticles prepared using this fabricated mill have been found to be free standing and also free from contaminations.

High purity zirconium obtainment through the iodine compounds transport method

International Nuclear Information System (INIS)

Bolcich, J.C.; Zuzek, E.; Dutrus, S.M.; Corso, H.L.

1987-01-01

This paper describes the experimental method and the equipment designed, constructed and actually applied for the high purity zirconium obtainment from a zirconium sponge of the nuclear type. The mechanism of purification is based on the impure metal attack with gaseous iodine (at 200 deg C) to obtain zirconium tetra iodine as main product which is then transformed into a pure zirconium base (at 1000-1300 deg C), precipitating the metallic zirconium and releasing the gaseous iodine. From the first experiences carried out, pure zirconium has been obtained from an initial filament of 0.5 mm of diameter as well as wires up to 2.5 mm of diameter. This work presents the results from the studies and analysis made to characterize the material obtained. Finally, the refining methods to which the zirconium produced may be submitted so as to optimize the final purity are discussed. (Author)

Recycling of high purity selenium from CIGS solar cell waste materials

Energy Technology Data Exchange (ETDEWEB)

Gustafsson, Anna M.K., E-mail: anna.gustafsson@chalmers.se; Foreman, Mark R.StJ.; Ekberg, Christian

2014-10-15

Highlights: • A new method for recycling of selenium from CIGS solar cell materials is presented. • Separation of selenium as selenium dioxide after heating in oxygen atmosphere. • Complete selenium separation after oxidation of <63 μm particles at 800 °C for 1 h. • After reduction of selenium dioxide the selenium purity was higher than 99.999 wt%. - Abstract: Copper indium gallium diselenide (CIGS) is a promising material in thin film solar cell production. To make CIGS solar cells more competitive, both economically and environmentally, in comparison to other energy sources, methods for recycling are needed. In addition to the generally high price of the material, significant amounts of the metals are lost in the manufacturing process. The feasibility of recycling selenium from CIGS through oxidation at elevated temperatures was therefore examined. During oxidation gaseous selenium dioxide was formed and could be separated from the other elements, which remained in solid state. Upon cooling, the selenium dioxide sublimes and can be collected as crystals. After oxidation for 1 h at 800 °C all of the selenium was separated from the CIGS material. Two different reduction methods for reduction of the selenium dioxide to selenium were tested. In the first reduction method an organic molecule was used as the reducing agent in a Riley reaction. In the second reduction method sulphur dioxide gas was used. Both methods resulted in high purity selenium. This proves that the studied selenium separation method could be the first step in a recycling process aimed at the complete separation and recovery of high purity elements from CIGS.

An ICP AES method for determination of dysprosium and terbium in high purity yttrium oxide

International Nuclear Information System (INIS)

Rupawate, V.H.; Hareendran, K.N.; Roy, S.B.

2011-01-01

High purity yttrium finds interesting application in astronavigation, luminescence, nuclear energy and metallurgical industries. Most of these applications require yttrium oxide of highest purity. Consequently there is a need for production of high purity yttrium oxide. Separation and purification of yttrium from other rare earths is a challenging task due to their close chemical properties. Liquid-liquid extraction and ion exchange have been widely used in the production of yttrium oxide of highest purity. Determination of impurities, especially other rare earths, in ppm level is required for process development and chemical characterization of the high purity Y 2 O 3 . Many methods have been described in literature. However since the advent of ICP AES much work in this area has been carried out by this technique. This paper describes the work done for determination of dysprosium (Dy) and terbium (Tb) in yttrium oxide using a high resolution sequential ICP AES. Emission spectra of rare earth elements are very complex and due to this complexity it is important to select spectral interference free analyte lines for determination of rare earths in rare earth matrix. For the determination of Dy and Tb in Y 2 O 3 , sensitive lines of Dy and Tb are selected from the instrument wavelength table and spectral interference free emission lines for the determination is selected by scanning around the selected wavelengths using 5 g/L Y solution and 5 mg/L standard solutions of Dy and Tb prepared in 4% nitric acid. It is found 353.170 nm line of Dy and 350.917 nm line Tb is suitable for quantitative determination. The signal to background ratio increases with increase in matrix concentration, i.e. from 1 to 5 mg/L. The optimum forward power is determined and it is found to be 1100W for Dy and 1000W for Tb. The instrument is calibrated using matrix matched standards containing 5g/L of Y matrix. Samples are dissolved in nitric acid and Y concentration is maintained at 5g/L. Two

Void swelling in fast reactor irradiated high purity binary iron-chromium alloys

International Nuclear Information System (INIS)

Little, E.A.; Stow, D.A.

The void swelling characteristics of a series of high purity binary iron-chromium alloys containing 0 - 615 0 C. The void swelling behaviour can be qualitatively rationalized in terms of point defect trapping and precipitation processes involving chromium atoms

High purity samarium oxide from mixed rare earth carbonates

International Nuclear Information System (INIS)

Queiroz, Carlos A. da S.; Seneda, Jose A.; Vasconcellos, Mari E. de; Pedreira Filho, Walter dos R.

2013-01-01

A simple and economical chemical process for the production of highly pure samarium oxides is discussed. The raw material, which was used in the form of rare earth carbonates was produced industrially from the chemical treatment of Brazilian monazite. Ion exchange chromatography was performed using a strong cationic resin that is typically employed in water treatment processes to fractionate rare earth elements (REE) without the use of retention ions. Under these conditions, 99.9% pure Sm 2 O 3 was eluted using the ammonium salt of ethylenediaminetetraacetic acid (EDTA) at a controlled pH. The EDTA-samarium complex was separated from EDTA and then precipitated as oxalate and fired to samarium oxide. Molecular absorption spectrophotometry was used to monitor the samarium content during the proposed process, and sector field inductively coupled plasma mass spectrometry was used to certify the purity of the samarium oxide. Typical samarium oxide obtained from the proposed procedure contained the following contaminants in micrograms per gram: Sc (20.90); Y (11.80); La (8.4); Ce (4.3); Pr (2.5); Nd (5.1); Eu (94); Gd (114); Tb (3.6); Dy (2.5), Ho (2.3); Er (3.0); Tm (2.3); Yb (38,2); Lu (25.6). The high-purity samarium oxides produced in the present study can be used as an alternative to imported products in research and development applications. (author)

Deuterium permeation and diffusion in high purity beryllium

International Nuclear Information System (INIS)

Abramov, E.

1990-05-01

The permeation rate of deuterium through high-purity beryllium membranes was measured using the gas-driven permeation technique. The time-dependent and the steady-state deuterium flux data were analyzed and the effective diffusivities of the samples were determined. A multilayer permeation theory was used in order to eliminate the surface oxide effects and the diffusion coefficients of the bulk beryllium were determined. The diffusion parameters obtained for the extra-grade beryllium samples (99.8%) are D 0 = 6.7 x 10 -9 [m 2 /s] and E D = 28.4 [KJ/mol]; and for the high-grade beryllium samples (99%) the parameters are D 0 = 8.0 x 10 -9 [m 2 /s] and E D = 35.1 [KJ/mol

Aerosol-assisted extraction of silicon nanoparticles from wafer slicing waste for lithium ion batteries.

Science.gov (United States)

Jang, Hee Dong; Kim, Hyekyoung; Chang, Hankwon; Kim, Jiwoong; Roh, Kee Min; Choi, Ji-Hyuk; Cho, Bong-Gyoo; Park, Eunjun; Kim, Hansu; Luo, Jiayan; Huang, Jiaxing

2015-03-30

A large amount of silicon debris particles are generated during the slicing of silicon ingots into thin wafers for the fabrication of integrated-circuit chips and solar cells. This results in a significant loss of valuable materials at about 40% of the mass of ingots. In addition, a hazardous silicon sludge waste is produced containing largely debris of silicon, and silicon carbide, which is a common cutting material on the slicing saw. Efforts in material recovery from the sludge and recycling have been largely directed towards converting silicon or silicon carbide into other chemicals. Here, we report an aerosol-assisted method to extract silicon nanoparticles from such sludge wastes and their use in lithium ion battery applications. Using an ultrasonic spray-drying method, silicon nanoparticles can be directly recovered from the mixture with high efficiency and high purity for making lithium ion battery anode. The work here demonstrated a relatively low cost approach to turn wafer slicing wastes into much higher value-added materials for energy applications, which also helps to increase the sustainability of semiconductor material and device manufacturing.

Recovery of high-purity metallic Pd from Pd(II)-sorbed biosorbents by incineration.

Science.gov (United States)

Won, Sung Wook; Lim, Areum; Yun, Yeoung-Sang

2013-06-01

This work reports a direct way to recover metallic palladium with high purity from Pd(II)-sorbed polyethylenimine-modified Corynebacterium glutamicum biosorbent using a combined method of biosorption and incineration. This study is focused on the incineration part which affects the purity of recovered Pd. The incineration temperature and the amount of Pd loaded on the biosorbent were considered as major factors in the incineration process, and their effects were examined. The results showed that both factors significantly affected the enhancement of the recovery efficiency and purity of the recovered Pd. SEM-EDX and XRD analyses were used to confirm that Pd phase existed in the ash. As a result, the recovered Pd was changed from PdO to zero-valent Pd as the incineration temperature was increased from 600 to 900°C. Almost 100% pure metallic Pd was recovered with recovery efficiency above 99.0% under the conditions of 900°C and 136.9 mg/g. Copyright © 2013 Elsevier Ltd. All rights reserved.

High-purity Cu nanocrystal synthesis by a dynamic decomposition method

OpenAIRE

Jian, Xian; Cao, Yu; Chen, Guozhang; Wang, Chao; Tang, Hui; Yin, Liangjun; Luan, Chunhong; Liang, Yinglin; Jiang, Jing; Wu, Sixin; Zeng, Qing; Wang, Fei; Zhang, Chengui

2014-01-01

Cu nanocrystals are applied extensively in several fields, particularly in the microelectron, sensor, and catalysis. The catalytic behavior of Cu nanocrystals depends mainly on the structure and particle size. In this work, formation of high-purity Cu nanocrystals is studied using a common chemical vapor deposition precursor of cupric tartrate. This process is investigated through a combined experimental and computational approach. The decomposition kinetics is researched via differential sca...

Simultaneous determination of dysprosium, holmium and erbium in high purity rare earth oxides by second order derivative spectrophotometry

International Nuclear Information System (INIS)

Anbu, M.; Prasada Rao, T.; Iyer, C. S. P.; Damodaran, A. D.

1996-01-01

High purity individual rare earth oxides are increasingly used as major components in lasers (Y 2 O 3 ), phosphors (YVO 3 , Eu 2 O 3 ), magnetic bubble memory films (Gd 2 O 3 ) and refractive-index lenses and fibre optics (La 2 O 3 ). The determination of individual lanthanides in high purity rare earth oxides is a more important and difficult task. This paper reports the utilization of higher order derivative spectrophotometry for the simultaneous determination of dysprosium, holmium and erbium in high purity rare earth oxides. The developed procedure is simple, reliable and allows the determination of 0.001 to 0.2% of dysprosium, holmium and erbium in several rare earth. (author). 9 refs, 2 figs, 2 tabs

Iron solubility in highly boron-doped silicon

International Nuclear Information System (INIS)

McHugo, S.A.; McDonald, R.J.; Smith, A.R.; Hurley, D.L.; Weber, E.R.

1998-01-01

We have directly measured the solubility of iron in high and low boron-doped silicon using instrumental neutron activation analysis. Iron solubilities were measured at 800, 900, 1000, and 1100thinsp degree C in silicon doped with either 1.5x10 19 or 6.5x10 14 thinspboronthinspatoms/cm 3 . We have measured a greater iron solubility in high boron-doped silicon as compared to low boron-doped silicon, however, the degree of enhancement is lower than anticipated at temperatures >800thinsp degree C. The decreased enhancement is explained by a shift in the iron donor energy level towards the valence band at elevated temperatures. Based on this data, we have calculated the position of the iron donor level in the silicon band gap at elevated temperatures. We incorporate the iron energy level shift in calculations of iron solubility in silicon over a wide range of temperatures and boron-doping levels, providing a means to accurately predict iron segregation between high and low boron-doped silicon. copyright 1998 American Institute of Physics

Process for making silicon from halosilanes and halosilicons

Science.gov (United States)

Levin, Harry (Inventor)

1988-01-01

A reactor apparatus (10) adapted for continuously producing molten, solar grade purity elemental silicon by thermal reaction of a suitable precursor gas, such as silane (SiH.sub.4), is disclosed. The reactor apparatus (10) includes an elongated reactor body (32) having graphite or carbon walls which are heated to a temperature exceeding the melting temperature of silicon. The precursor gas enters the reactor body (32) through an efficiently cooled inlet tube assembly (22) and a relatively thin carbon or graphite septum (44). The septum (44), being in contact on one side with the cooled inlet (22) and the heated interior of the reactor (32) on the other side, provides a sharp temperature gradient for the precursor gas entering the reactor (32) and renders the operation of the inlet tube assembly (22) substantially free of clogging. The precursor gas flows in the reactor (32) in a substantially smooth, substantially axial manner. Liquid silicon formed in the initial stages of the thermal reaction reacts with the graphite or carbon walls to provide a silicon carbide coating on the walls. The silicon carbide coated reactor is highly adapted for prolonged use for production of highly pure solar grade silicon. Liquid silicon (20) produced in the reactor apparatus (10) may be used directly in a Czochralski or other crystal shaping equipment.

High-density oxidized porous silicon

International Nuclear Information System (INIS)

Gharbi, Ahmed; Souifi, Abdelkader; Remaki, Boudjemaa; Halimaoui, Aomar; Bensahel, Daniel

2012-01-01

We have studied oxidized porous silicon (OPS) properties using Fourier transform infraRed (FTIR) spectroscopy and capacitance–voltage C–V measurements. We report the first experimental determination of the optimum porosity allowing the elaboration of high-density OPS insulators. This is an important contribution to the research of thick integrated electrical insulators on porous silicon based on an optimized process ensuring dielectric quality (complete oxidation) and mechanical and chemical reliability (no residual pores or silicon crystallites). Through the measurement of the refractive indexes of the porous silicon (PS) layer before and after oxidation, one can determine the structural composition of the OPS material in silicon, air and silica. We have experimentally demonstrated that a porosity approaching 56% of the as-prepared PS layer is required to ensure a complete oxidation of PS without residual silicon crystallites and with minimum porosity. The effective dielectric constant values of OPS materials determined from capacitance–voltage C–V measurements are discussed and compared to FTIR results predictions. (paper)

Process Development in the Preparation and Characterization of Silicon Alkoxide From Rice Husk

International Nuclear Information System (INIS)

Khin San Win; Toe Shein; Nyunt Wynn

2011-12-01

The preparation and characterization of silicon alkoxide (silicon isopropoxide) from rice husk char has been studied. In the investigation, four kinds of Myanmar paddies were chemically assayed. Analyses showed the silicon contend varies from 73-92% . Based on the silicon content, the process development in the production of silicon isopropoxide was carried out. In the process development, silicon isopropoxide with a yield of 44.21% was achieved by the direct reaction of isopropanol in situ by silicon tetrachloride, which was directly produced by the chlorination of rice husk char at the high temperature range of 900-1100 C. The novelity of the process was that, silicon isopropoxide was achieved in situ and not by using the old process, where generally isopropanol was reacted with silicon tetrachloride. The physiochemical properties of silicon isopropoxide was confirmed by conventional and modern techniques. In the investigation, the starting materials, silica in the reaction products were characterized, identified and confirmed by modren techniques. Silicon isopropoxide can be a sources of pore silica whereby silicon of 97-99% of purity can be achieved.

Dissolution of high-purity lead and subsequent crystal growth during the preparation of corrosion coupons

Energy Technology Data Exchange (ETDEWEB)

McGarvey, G.B. [Atomic Energy of Canada Limited, Chalk River, Ontario (Canada); McDougall, T.E.; Owen, D.G. [Atomic Energy of Canada Limited, Pinawa, Manitoba (Canada)

1997-07-01

High-purity lead discs were prepared using several combinations of polishing, rinsing and ultrasonic treatment. Physical degradation of the lead surface and the premature generation and deposition of oxides on the surface were observed for certain combinations of preparation steps. Ultrasonic treatment of the discs was found to be particularly detrimental as it induced significant crystal growth and, in several instances, deterioration of the polished surface. Simple air drying of freshly rinsed discs also led to oxide formation on the surface after as short a time as 1 min. An effective method for preparing discs from high-purity lead is described. (author)

Dissolution of high-purity lead and subsequent crystal growth during the preparation of corrosion coupons

International Nuclear Information System (INIS)

McGarvey, G.B.; McDougall, T.E.; Owen, D.G.

1997-01-01

High-purity lead discs were prepared using several combinations of polishing, rinsing and ultrasonic treatment. Physical degradation of the lead surface and the premature generation and deposition of oxides on the surface were observed for certain combinations of preparation steps. Ultrasonic treatment of the discs was found to be particularly detrimental as it induced significant crystal growth and, in several instances, deterioration of the polished surface. Simple air drying of freshly rinsed discs also led to oxide formation on the surface after as short a time as 1 min. An effective method for preparing discs from high-purity lead is described. (author)

Production of electronic grade lunar silicon by disproportionation of silicon difluoride

Science.gov (United States)

Agosto, William N.

1993-01-01

Waldron has proposed to extract lunar silicon by sodium reduction of sodium fluorosilicate derived from reacting sodium fluoride with lunar silicon tetrafluoride. Silicon tetrafluoride is obtained by the action of hydrofluoric acid on lunar silicates. While these reactions are well understood, the resulting lunar silicon is not likely to meet electronic specifications of 5 nines purity. Dale and Margrave have shown that silicon difluoride can be obtained by the action of silicon tetrafluoride on elemental silicon at elevated temperatures (1100-1200 C) and low pressures (1-2 torr). The resulting silicon difluoride will then spontaneously disproportionate into hyperpure silicon and silicon tetrafluoride in vacuum at approximately 400 C. On its own merits, silicon difluoride polymerizes into a tough waxy solid in the temperature range from liquid nitrogen to about 100 C. It is the silicon analog of teflon. Silicon difluoride ignites in moist air but is stable under lunar surface conditions and may prove to be a valuable industrial material that is largely lunar derived for lunar surface applications. The most effective driver for lunar industrialization may be the prospects for industrial space solar power systems in orbit or on the moon that are built with lunar materials. Such systems would require large quantities of electronic grade silicon or compound semiconductors for photovoltaics and electronic controls. Since silicon is the most abundant semimetal in the silicate portion of any solar system rock (approximately 20 wt percent), lunar silicon production is bound to be an important process in such a solar power project. The lunar silicon extraction process is discussed.

Amorphous silicon rich silicon nitride optical waveguides for high density integrated optics

DEFF Research Database (Denmark)

Philipp, Hugh T.; Andersen, Karin Nordström; Svendsen, Winnie Edith

2004-01-01

Amorphous silicon rich silicon nitride optical waveguides clad in silica are presented as a high-index contrast platform for high density integrated optics. Performance of different cross-sectional geometries have been measured and are presented with regards to bending loss and insertion loss...

Release characteristics of tritium from high-purity lithium oxide

International Nuclear Information System (INIS)

O'Kula, K.R.; Vogelsang, W.F.

1985-01-01

Rates of tritium release from neutronirradiated lithium oxide were determined from isothermal release experiments. High-purity, monocrystalline lithium oxide was purged ex-reactor with helium and helium-hydrogen gas streams. Overall release was found to be controlled by solid-phase diffusion, and was predominantly in the form of condensible species. The result of an independent concentration profile analysis at 923 K was in agreement with the gas release diffusion coefficient. Sweeping the Li 2 O with hydrogen-containing gas was found to enhance tritium removal during the early stage of each run

High damage tolerance of electrochemically lithiated silicon

Science.gov (United States)

Wang, Xueju; Fan, Feifei; Wang, Jiangwei; Wang, Haoran; Tao, Siyu; Yang, Avery; Liu, Yang; Beng Chew, Huck; Mao, Scott X.; Zhu, Ting; Xia, Shuman

2015-01-01

Mechanical degradation and resultant capacity fade in high-capacity electrode materials critically hinder their use in high-performance rechargeable batteries. Despite tremendous efforts devoted to the study of the electro–chemo–mechanical behaviours of high-capacity electrode materials, their fracture properties and mechanisms remain largely unknown. Here we report a nanomechanical study on the damage tolerance of electrochemically lithiated silicon. Our in situ transmission electron microscopy experiments reveal a striking contrast of brittle fracture in pristine silicon versus ductile tensile deformation in fully lithiated silicon. Quantitative fracture toughness measurements by nanoindentation show a rapid brittle-to-ductile transition of fracture as the lithium-to-silicon molar ratio is increased to above 1.5. Molecular dynamics simulations elucidate the mechanistic underpinnings of the brittle-to-ductile transition governed by atomic bonding and lithiation-induced toughening. Our results reveal the high damage tolerance in amorphous lithium-rich silicon alloys and have important implications for the development of durable rechargeable batteries. PMID:26400671

Introduction of high oxygen concentrations into silicon wafers by high-temperature diffusion

International Nuclear Information System (INIS)

Casse, G.; Glaser, M.; Lemeilleur, F.; Ruzin, A.; Wegrzecki, M.

1999-01-01

The tolerance of silicon detectors to hadron irradiation can be improved by the introduction of a high concentration of oxygen into the starting material. High-resistivity Floating-Zone (FZ) silicon is required for detectors used in particle physics applications. A significantly high oxygen concentration (>10 17 atoms cm -3 ) cannot readily be achieved during the FZ silicon refinement. The diffusion of oxygen at elevated temperatures from a SiO 2 layer grown on both sides of a silicon wafer is a simple and effective technique to achieve high and uniform concentrations of oxygen throughout the bulk of a 300 μm thick silicon wafer

Process for producing high purity isoolefins and dimers thereof by dissociation of ethers

Science.gov (United States)

Smith, L.A. Jr.; Jones, E.M. Jr.; Hearn, D.

1984-05-08

Alkyl tertiary butyl ether or alkyl tertiary amyl ether is dissociated by vapor phase contact with a cation acidic exchange resin at temperatures in the range of 150 to 250 F at LHSV of 0.1 to 20 to produce a stream consisting of unreacted ether, isobutene or isoamylene and an alcohol corresponding to the alkyl radical. After the alcohol is removed, the ether/isoolefin stream may be fractionated to obtain a high purity isoolefin (99+%) or the ether/isoolefin stream can be contacted in liquid phase with a cation acidic exchange resin to selectively dimerize the isoolefin in a highly exothermic reaction, followed by fractionation of the dimerization product to produce high purity diisoolefin (97+%). In the case where the alkyl is C[sub 3] to C[sub 6] and the corresponding alcohol is produced on dissociation of the ether, combined dissociation-distillation may be carried out such that isoolefin is the overhead product and alcohol the bottom. 2 figs.

Preparation of High Purity CdTe for Nuclear Detector: Electrical and Nuclear Characterization

Science.gov (United States)

Zaiour, A.; Ayoub, M.; Hamié, A.; Fawaz, A.; Hage-ali, M.

High purity crystal with controllable electrical properties, however, control of the electrical properties of CdTe has not yet been fully achieved. Using the refined Cd and Te as starting materials, extremely high-purity CdTe single crystals were prepared by the traditional vertical THM. The nature of the defects involved in the transitions was studied by analyzing the position of the energy levels by TSC method. The resolution of 4.2 keV (FWHM) confirms the high quality and stability of the detectors: TSC spectrum was in coherence with detectors spectrum with a horizontal plate between 0.2 and 0.6 eV. The enhancement in resolution of detectors with a full width at half- maximum (less than 0.31 meV), lead to confirm that the combination of vacuum distillation and zone refining was very effective to obtain more purified CdTe single crystals for photovoltaic or nuclear detectors with better physical properties.

High-Purity Fe3S4 Greigite Microcrystals for Magnetic and Electrochemical Performance

NARCIS (Netherlands)

Li, Guowei; Zhang, Baomin; Yu, Feng; Novakova, Alla A.; Krivenkov, Maxim S.; Kiseleva, Tatiana Y.; Chang, Liao; Rao, Jiancun; Polyakov, Alexey O.; Blake, Graeme R.; de Groot, Robert A.; Palstra, Thomas T. M.

2014-01-01

High-purity Fe3S4 (greigite) microcrystals with octahedral shape were synthesized via a simple hydrothermal method using a surfactant. The as-prepared samples have the inverse spinel structure with high crystallinity. The saturation magnetization (M-s) reaches 3.74 mu(B) at 5 K and 3.51 mu(B) at

Approaches to the accurate characterization of high purity metal fluorides and fluoride glasses

Science.gov (United States)

Beary, E. S.; Paulsen, P. J.; Rains, T. C.; Ewing, K. J.; Jaganathan, J.; Aggarwal, I.

1990-11-01

The analytical challenges posed by the measurement of trace contaminants in high purity metal fluorides require that innovative chemical preparation procedures be used to enhance existing instrumental techniques. The instrumental techniques used to analyze these difficult matrices must be sensitive enough to detect extremely low levels of trace impurities, and the background interferences derived from the matrix (metal fluoride or glass) must be minimized. A survey of analytical techniques that have the necessary characteristics to analyze these materials will be given. In addition, means of controlling the chemical blank will be presented. Mass and atomic spectrometric techniques will be discussed, specifically graphite furnace atomic absorption spectrometry (GFAAS) and inductively coupled plasma-mass spectrometry (ICP-MS). Analytical procedures using GFAAS and ICP-MS have been developed to determine sub ppb (part per billion) levels of contaminants in high purity fluoride materials.

Recent developments in high purity niobium metal production at CBMM

International Nuclear Information System (INIS)

Abdo, Gustavo Giovanni Ribeiro; Sousa, Clovis Antonio de Faria; Guimarães, Rogério Contato; Ribas, Rogério Marques; Vieira, Alaércio Salvador Martins; Menezes, Andréia Duarte; Fridman, Daniel Pallos; Cruz, Edmundo Burgos

2015-01-01

CBMM is a global supplier of high quality niobium products including pure niobium, the focus of this paper. CBMM’s position has been consolidated over three decades of producing high purity niobium metal ingots. The company supplies, among other products, commercial and reactor grade niobium ingots. One of the main uses of CBMM’s ingots is for the manufacture of particle accelerators (superconducting radio frequency – SRF – cavities), where the purity and homogeneity of niobium metal is essentially important for good performance. CBMM constantly strives to improve process controls and product quality, and is currently implementing innovations in production, research and development to further improve ingot quality. The main aim is to reduce the content of interstitial elements, such as nitrogen (N), oxygen (O), carbon (C), and hydrogen (H), starting with the raw materials through the final step of ingot production. CBMM held the first trial to produce the world’s largest-diameter niobium ingot (as cast 535 mm). The results of this initial trial presented very low levels of interstitial impurities (N, O, C, H), allowing the achievement of residual resistivity ratio (RRR) values very close to 300 in a six-melt process in an electron beam furnace. These values were reached with 850 ppm of tantalum. SRF cavities will be produced with this material in order to study the effect of low impurities and high RRR on the Q factor and accelerating gradient

High-efficient solar cells with porous silicon

International Nuclear Information System (INIS)

Migunova, A.A.

2002-01-01

It has been shown that the porous silicon is multifunctional high-efficient coating on silicon solar cells, modifies its surface and combines in it self antireflection and passivation properties., The different optoelectronic effects in solar cells with porous silicon were considered. The comparative parameters of uncovered photodetectors also solar cells with porous silicon and other coatings were resulted. (author)

High purity heavy water production: need for total organic carbon determination in process water streams

International Nuclear Information System (INIS)

Ayushi; Kumar, Sangita D.; Reddy, A.V.R.; Vithal, G.K.

2009-01-01

In recent times, demand for high purity heavy water (99.98% pure) in industries and laboratories has grown by manifold. Its application started in nuclear industry with the design of CANDU reactor, which uses natural uranium as fuel. In this reactor the purest grade of heavy water is used as the moderator and the primary coolant. Diverse industrial applications like fibre optics, medicine, semiconductors etc. use high purity heavy water extensively to achieve better performance of the specific material. In all these applications there is a stringent requirement that the total organic carbon content (TOC) of high purity heavy water should be very low. This is because the presence of TOC can lead to adverse interactions in different applications. To minimize the TOC content in the final product there is a need to monitor and control the TOC content at each and every stage of heavy water production. Hence a simple, rapid and accurate method was developed for the determination of TOC content in process water samples. The paper summarizes the results obtained for the TOC content in the water samples collected from process streams of heavy water production plant. (author)

Charge collection performance of a segmented planar high-purity germanium detector

Energy Technology Data Exchange (ETDEWEB)

Cooper, R.J. [Department of Physics, The University of Liverpool, Oliver Lodge Laboratory, Liverpool Merseyside L69 7ZE (United Kingdom)], E-mail: R.Cooper@liverpool.ac.uk; Boston, A.J.; Boston, H.C.; Cresswell, J.R.; Grint, A.N.; Harkness, L.J.; Nolan, P.J.; Oxley, D.C.; Scraggs, D.P. [Department of Physics, The University of Liverpool, Oliver Lodge Laboratory, Liverpool Merseyside L69 7ZE (United Kingdom); Lazarus, I.; Simpson, J. [STFC Daresbury Laboratory, Warrington, Cheshire WA4 4AD (United Kingdom); Dobson, J. [Rosemere Cancer Centre, Royal Preston Hospital, Preston PR2 9HT (United Kingdom)

2008-10-01

High-precision scans of a segmented planar high-purity germanium (HPGe) detector have been performed with a range of finely collimated gamma ray beams allowing the response as a function of gamma ray interaction position to be quantified. This has allowed the development of parametric pulse shape analysis (PSA) techniques and algorithms for the correction of imperfections in performance. In this paper we report on the performance of this detector, designed for use in a positron emission tomography (PET) development system.

High-End Silicon PDICs

Directory of Open Access Journals (Sweden)

H. Zimmermann

2008-05-01

Full Text Available An overview on integrated silicon photodiodes and photodiode integrated circuits (PDICs or optoelectronic integrated circuits (OEICs for optical storage systems (OSS and fiber receivers is given. It is demonstrated, that by using low-cost silicon technologies high-performance OEICs being true competitors for some III/V-semiconductor OEICs can be realized. OSS-OEICs with bandwidths of up to 380 MHz and fiber receivers with maximum data rates of up to 11 Gbps are described. Low-cost data comm receivers for plastic optical fibers (POF as well as new circuit concepts for OEICs and highly parallel optical receivers are described also in the following.

Amplitude dependent damping in single crystalline high purity molybdenum

International Nuclear Information System (INIS)

Zelada-Lambri, G.I; Lambri, O.A; Garcia, J.A; Lomer, J.N

2004-01-01

Amplitude dependent damping measurements were performed on high purity single crystalline molybdenum at several different constant temperatures between room temperature and 1273K. The employed samples were single crystals with the orientation, having a residual resistivity ratio of about 8000. Previously to the amplitude dependent damping tests, the samples were subjected to different thermomechanical histories. Amplitude dependent damping effects appear only during the first heating run in temperature where the samples have the thermomechanical state of the deformation process at room temperature. In the subsequent run-ups in temperature, i.e, after subsequent annealings, amplitude dependent damping effects were not detected (au)

Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures

Energy Technology Data Exchange (ETDEWEB)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar; Iacopi, Francesca [Queensland Micro and Nanotechnology Centre and Environmental Futures Research Institute, Griffith University, Nathan QLD 4111 (Australia); Boeckl, John J. [Materials and Manufacturing Directorate, Air Force Research Laboratories, Wright-Patterson Air Force Base, Ohio 45433 (United States); Hellerstedt, Jack; Fuhrer, Michael S. [Monash Centre for Atomically Thin Materials, Monash University, Monash, VIC 3800 (Australia)

2016-07-04

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurements indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.

Comparison of Deformation in High-Purity Single/Large Grain and Polycrystalline Niobium Superconducting Cavities

International Nuclear Information System (INIS)

Ganapati Rao Myneni; Peter Kneisel

2005-01-01

The current approach for the fabrication of superconducting radio frequency (SRF) cavities is to roll and deep draw sheets of polycrystalline high-purity niobium. Recently, a new technique was developed at Jefferson Laboratory that enables the fabrication of single-crystal high-purity Nb SRF cavities. To better understand the differences between SRF cavities fabricated out of fine-grained polycrystalline sheet in the standard manner and single crystal cavities fabricated by the new technique, two half-cells were produced according to the two different procedures and compared using a variety of analytical techniques including optical microscopy, scanning laser confocal microscopy, profilometry, and X-ray diffraction. Crystallographic orientations, texture, and residual stresses were determined in the samples before and after forming and this poster presents the results of this ongoing study

Human parvovirus B19 infection in hemophiliacs first infused with two high-purity, virally attenuated factor VIII concentrates.

Science.gov (United States)

Azzi, A; Ciappi, S; Zakvrzewska, K; Morfini, M; Mariani, G; Mannucci, P M

1992-03-01

Human parvovirus B19 can be transmitted by coagulation factor concentrates and is highly resistant to virucidal methods. To evaluate whether the additional removal of virus by chromatographic methods during the manufacture of high-purity concentrates reduces the risk of B19 transmission, we have prospectively evaluated the rate of anti-B19 seroconversion in two groups of susceptible (anti-B19 negative) hemophiliacs infused with high-purity, heated (pasteurized) or solvent-detergent-treated factor VIII concentrates. Both products infected a relatively high proportion of patients (nine of 20).

High purity and semi-insulating 4H-SiC crystals grown by physical vapor transport

Energy Technology Data Exchange (ETDEWEB)

Augustine, G.; Hobgood, H.McD.; Balakrishna, V.; Dunne, G.T.; Hopkins, R.H.; Thomas, R.N. [Northrop Grumman Corp., Pittsburgh, PA (United States). Science and Technology Center; Doolittle, W.A.; Rohatgi, A. [Georgia Inst. of Tech., Atlanta, GA (United States). School of Electrical and Computer Engineering

1998-06-01

High purity undoped and semi-insulating vanadium doped 4H-SiC single crystals with diameters up to 50 mm were grown by the physical vapor transport method. Undoped crystals exhibiting resistivities in the 10{sup 2} to 10{sup 3} {Omega}-cm range and photoconductive decay (PCD) lifetimes in the 2 to 9 {mu}s range, were grown from high purity SiC sublimation sources. The crystals were p-type due to the presence of residual acceptor impurities, mainly boron. The semi-insulating behavior of the vanadium doped crystals is attributed to compensation of residual acceptors by the deep level vanadium donor located near the middle of the band gap. (orig.) 6 refs.

High Efficiency, Low Cost Solar Cells Manufactured Using 'Silicon Ink' on Thin Crystalline Silicon Wafers

Energy Technology Data Exchange (ETDEWEB)

Antoniadis, H.

2011-03-01

Reported are the development and demonstration of a 17% efficient 25mm x 25mm crystalline Silicon solar cell and a 16% efficient 125mm x 125mm crystalline Silicon solar cell, both produced by Ink-jet printing Silicon Ink on a thin crystalline Silicon wafer. To achieve these objectives, processing approaches were developed to print the Silicon Ink in a predetermined pattern to form a high efficiency selective emitter, remove the solvents in the Silicon Ink and fuse the deposited particle Silicon films. Additionally, standard solar cell manufacturing equipment with slightly modified processes were used to complete the fabrication of the Silicon Ink high efficiency solar cells. Also reported are the development and demonstration of a 18.5% efficient 125mm x 125mm monocrystalline Silicon cell, and a 17% efficient 125mm x 125mm multicrystalline Silicon cell, by utilizing high throughput Ink-jet and screen printing technologies. To achieve these objectives, Innovalight developed new high throughput processing tools to print and fuse both p and n type particle Silicon Inks in a predetermined pat-tern applied either on the front or the back of the cell. Additionally, a customized Ink-jet and screen printing systems, coupled with customized substrate handling solution, customized printing algorithms, and a customized ink drying process, in combination with a purchased turn-key line, were used to complete the high efficiency solar cells. This development work delivered a process capable of high volume producing 18.5% efficient crystalline Silicon solar cells and enabled the Innovalight to commercialize its technology by the summer of 2010.

Preparation of high-purity cerium nitrate; Preparacao de nitrato de cerio de alta pureza

Energy Technology Data Exchange (ETDEWEB)

Avila, Daniela Moraes; Silva Queiroz, Carlos Alberto da; Santos Mucillo, Eliana Navarro dos [Instituto de Pesquisas Energeticas e Nucleares (IPEN), Sao Paulo, SP (Brazil)

1995-12-31

The preparation of high-purity cerium nitrate has been carried out Cerium oxide has been prepared by fractioned precipitation and ionic exchange techniques, using a concentrate with approximately 85% of cerium oxide from NUCLEMON as raw material. Five sequential ion-exchange columns with a retention capacity of 170 g each have been used. The ethylenediamine-tetraacetic acid (EDTA) was used as eluent. The cerium content has been determined by gravimetry and iodometry techniques. The resulting cerium oxide has a purity > 99%. This material was transformed in cerium nitrate to be used as precursor for the preparation of Zirconia-ceria ceramics by the coprecipitation technique. (author) 2 tabs.

Rare earth impurities in high purity lanthanum oxide determined by neutron activation analysis

International Nuclear Information System (INIS)

Nguyen Van Suc; Desai, H.B.; Parthasarathy, R.; Gangadharan, S.

1992-01-01

Individual rare earth impurities in high purity La 2 O 3 (≥99.9%) have been determined by NAA after pre-separation of the matrix (La). The separation is carried out on an anion exchanger (Dowex 1x8) using different mixtures of methanol/nitric acid as eluants. The rare earth elements from Dy to Lu are eluted quantitatively using a 10% 1M HNO 3 - 90% methanol mixture, while the light rare earths from Ce to Gd are eluted quantitatively using a 10% 0.05M HNO 3 - 90% methanol mixture. La, which is retained on the column, is eluted using 0.1M HNO 3 . The recoveries of the various rare earth elements have been checked using radiotracers and also by spiking the sample with known amount of elements, and the recoveries are found to be quantitative. Results obtained on a typical high purity lanthanum oxide are reported here. (author) 5 refs.; 1 fig

Radiochemical neutron activation analysis based multi-elemental analysis of high purity gallium

International Nuclear Information System (INIS)

Tashimova, F.A.; Sadikov, I.I; Salimov, M.I.; Zinov'ev, V.G.

2006-01-01

Full text: Gallium is one of the widely used materials in semiconductor and optoelectronics industry. Gallium is used to produce infrared detectors, piezoelectric sensors, high- and low-temperature transistors for space and defense technology. One of the most important requirements for semiconductor materials of gallium compounds is an excessive high purity for layers and films. Information on impurities (type of an impurity, concentration, character of distribution) is important as for better understanding of the physical and chemical processes taking place in formed semiconductor structures and for the 'know-how' of devices on their basis. The object of this work is to develop radiochemical neutron activation technique for analysis of high purity gallium. Irradiation of 0.1 g of gallium sample in neutron flux of 5·10 13 cm -2 s -1 for 5 hours will result in induced activity of more than 10 8 Bq, due to 72 Ga radionuclide, half-life of which is 14.1 hours. Therefore to perform instrumental NAA of gallium long period (10 day) cooling is required, and high sensitive determination of elements producing short- and long-lived radionuclides (T 1/2 72 Ga. We have studied the behavior of gallium in extraction-chromatographic system 'TBP-HCl'. The experiments have shown that higher factor of distribution (D) and capacity on gallium can be achieved when 'TBP-4M HCl' system is used. However more than 10 trace elements have high D and thus they cannot be separated from 72 Ga. To resolve the problem and increase the number of separated trace elements we have used preliminary satisfaction of chromatographic column with tellurium, which has D higher than the most of elements in 'TBP-4M HCl' system and thus suppresses extraction of elements. Distribution profile of gallium along the column and elution curve of 25 trace elements have been measured. Chemical yields of separated elements measured by using radiotracers are more than 93%. On the basis of the carried out researches

Obtention of high purity silica from the flotation waste of itabiritic ore

International Nuclear Information System (INIS)

Martins, Polyana Fabricia Fernandes

2016-01-01

Banded iron formations are exploited as iron mineral in 'Quadrilatero Ferrifero' of Minas Gerais (MG) State, Brazil. About half of the amount of extracted material becomes tailings, which are stored in tailing dams or used for filling mining pits. Tens of thousands of tons are generated daily in operating mines in this region, causing concern about the environmental liabilities, and costs to manage the tailing dams. Miners are committed to finding uses for these wastes in other productive chains. This thesis aimed to obtain high purity silica from the flotation tailings of banded iron formations using classical techniques for ore processing, such as particle size classification and magnetic separation, followed by hydrometallurgical leaching, also alkaline fusion and chemical precipitation. The tailings samples was collected in the tailings dam of Peak Mine operated by Vale A.S., in Itabirito – MG. This sample had initially 33.4% by weight SiO 2 , 57.4% wt Fe 2 O 3 and 8.31% wt Al 2 O 3 . After desliming for disposal of the fine particles (-37μm) the composition was 68.0% SiO 2 , 31.4% Fe 2 O 3 and 0.50% Al 2 O 3 . After magnetic separation, the composition was 93.8% SiO 2 , 1.16% Fe 2 O 3 and 3.80% Al 2 O 3 . After acid leaching l or digestion to remove impurities, it was possible to obtain silica with 98% purity. The fusion with sodium hydroxide, followed by alkaline leaching of sodium silicate and silica precipitation gave purities of about 99.5%. Values even higher may be possible with optimization of the parameters of alkaline fusion or by repeating the process from the product with purity of 99.5%. The iron oxide content and the aluminum main contaminants were 0.01% and 0.07%, respectively. Amorphous silica was obtained with high specific surface (322 m 2 /g) and particle size less than 200 nm. Depending on the application, a control should be made for the impurities, such as phosphorus, potassium and boron. (author)

Investigation of sulphides in iron alloys of high purity

International Nuclear Information System (INIS)

Wyjadlowski, T.

1973-01-01

This research thesis reports the study of the morphology and composition of sulphides in iron alloys with respect to metal composition and to the nature of impurities. In order to understand the specific action of each addition on inclusion morphology, this work has started with high-purity alloys (binary alloys and then ternary alloys). The author studied whether solubility variations would entail either intergranular or intragranular or hybrid iron sulphide precipitation. He examined whether sulphide morphology is depending on thermal treatment, and whether equilibrium precipitates were different in terms of morphology and composition at high and room temperature. He studied the influence of addition elements on sulphide morphology and composition, an important issue as some elements may reduce brittleness. These elements are classified in terms of affinity with sulphur

Impurity segregation behavior in polycrystalline silicon ingot grown with variation of electron-beam power

Science.gov (United States)

Lee, Jun-Kyu; Lee, Jin-Seok; Jang, Bo-Yun; Kim, Joon-Soo; Ahn, Young-Soo; Cho, Churl-Hee

2014-08-01

Electron beam melting (EBM) systems have been used to improve the purity of metallurgical grade silicon feedstock for photovoltaic application. Our advanced EBM system is able to effectively remove volatile impurities using a heat source with high energy from an electron gun and to continuously allow impurities to segregate at the top of an ingot solidified in a directional solidification (DS) zone in a vacuum chamber. Heat in the silicon melt should move toward the ingot bottom for the desired DS. However, heat flux though the ingot is changed as the ingot becomes longer due to low thermal conductivity of silicon. This causes a non-uniform microstructure of the ingot, finally leading to impurity segregation at its middle. In this research, EB power irradiated on the silicon melt was controlled during the ingot growth in order to suppress the change of heat flux. EB power was reduced from 12 to 6.6 kW during the growth period of 45 min with a drop rate of 0.125 kW/min. Also, the silicon ingot was grown under a constant EB power of 12 kW to estimate the effect of the drop rate of EB power. When the EB power was reduced, the grains with columnar shape were much larger at the middle of the ingot compared to the case of constant EB power. Also, the present research reports a possible reason for the improvement of ingot purity by considering heat flux behaviors.

The ion-exchange obtaining of high purity samarium oxide

International Nuclear Information System (INIS)

Brzyska, W.; Soltysiak, I.; Cygan, J.

1987-01-01

The use of lactic acid - EDTA mixture as an eluent for the obtaining of high purity samarium oxide was studied. The studies were carried out at room temperature on cation exchange resin Wofatit KPS X 8. The best results were obtained for lactic acid (0,26 mol/dm 3 ) - EDTA (0,013 mol/dm 3 ) mixture at pH 3,3. As the result of 57% samarium concentrate elution with column load 1:3 and flow rate 0,4 cm/min, over 99% pure samarium oxide with 73% yield has been obtained. The yield of spectrally pure Sm 2 O 3 exceeded 45%. (author)

Improved procedure for high purity gaseous peroxyacyl nitrate production: use of heavy lipid solvents

Energy Technology Data Exchange (ETDEWEB)

Gaffney, J S; Fajer, R; Senum, G I

1984-01-01

An improved procedure is described for the production of peroxyacyl nitrates (PAN's) in the gas phase. The method of Nielsen et al. (1982) has been modified to yield PAN's of high purity with no further chromatographic purification required. Extraction of PAN's from the nitration of the peracids is accomplished by use of a heavy lipid solvent (n-tridecane). This solvent's low vapor pressure allows the simple separation and preparation of high purity gaseous PAN's (>98%) as determined by Fourier transform infrared spectroscopy (FTIR). Using this method infrared integrated band strengths are reported for peroxyacetyl nitrate (PAN) perdeutero-peroxyacetyl nitrate (PAN-D/sub 3/) and peroxyproprionyl nitrate (PPN). The method allows facile production of large amounts of gaseous PAN's for smog chamber and laboratory studies, toxicological and health effects research, as well as for calibration of PAN analyses.

Shock loading influence on mechanical behavior of high purity iron

International Nuclear Information System (INIS)

Buy, Francois; Voltz, Christophe

2004-01-01

This paper proposes the analysis of shock wave effects for high purity iron. The method developed is based on the characterization of the mechanical behavior of as received and shocked material. Shock effect is generated through plate impact tests performed in the range of 4 GPa to 39 GPa on a single stage light gas gun or a powder gun. Therefore, as-received and impacted materials are characterized. A formalism proposed by J.R.Klepaczko and based on physical relations has been adopted to describe stress strain curves

In vitro characterization of high purity factor IX concentrates for the treatment of hemophilia B.

Science.gov (United States)

Limentani, S A; Gowell, K P; Deitcher, S R

1995-04-01

This study employed sodium dodecyl sulfate-polyacrylamide gel electrophoresis (SDS-PAGE) analysis and immunoblotting to assess the purity of seven high purity factor IX concentrates: Aimafix (Aima), AlphaNine-SD (Alpha Therapeutic), Factor IX VHP (Biotransfusion), Immunine (Immuno), Mononine (Armour Pharmaceutical), Nanotiv (Kabi Pharmacia), and 9MC (Blood Products Laboratory). The mean specific activity of these products ranged from 68 U factor IX/mg (Aimafix) to 246 U factor IX/mg (Mononine). SDS-PAGE analysis showed that the highest purity product, Mononine, had a single contaminating band under non-reducing conditions. Two additional bands were detected when this product was analyzed under reducing conditions. All other products had multiple contaminating bands that were more apparent under reducing than non-reducing conditions. The immunoblot for factor IX showed a dominant factor IX band for all products. In addition, visible light chain of factor IX was detected for AlphaNine-SD, Factor IX VHP, Immunine, Mononine, Nanotiv, and 9MC, suggesting that the factor IX in these products had undergone partial activation to factor IXa. Another contaminating band was visible at 49,500 for all of the products except 9MC. In addition to this band, high molecular weight contaminants were apparent for some products, most notably AlphaNine-SD. The identity of these bands is unknown. Immunoblotting failed to demonstrate factor VII as a contaminant of any of the high purity products, although factor VIIa could be detected in some lots of Immunine, Nanotiv, and 9MC by a clot-based assay. Factor X contaminated Aimafix, AlphaNine-SD, Factor IX VHP, Immunine, Nanotiv, and 9MC, but activation products of factor X were not detected.(ABSTRACT TRUNCATED AT 250 WORDS)

Report on achievements in fiscal 1998. Development of silicon manufacturing process to rationalize energy usage (Development of mass production technology for solar-grade silicon); 1998 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1999-03-01

In the proliferation stage of solar cells, a technology is required to manufacture low-cost SOG-Si that can handle small quantity production. Development is being made on a manufacturing technology using high purity metallic silicon (99.5%) as the raw material. Considering that the subject impurities are P, B and metallic impurities (Fe, Ti and Al), a manufacturing method consisting of the following processes is being developed: metallic silicon/phosphorus removal, solidification and rough refining/boron removal, solidification and fine refining. Discussions are being advanced on phosphorus removal by using a large electron beam fusion equipment, and at the same time, the discussions are supported by fabricating and installing a large equipment intended of removing boron and the metallic impurities. Boron is removed by oxidizing it with steam. Therefore, the basic mechanism of the equipment is to spray argon plasma added with steam onto the molten silicon surface. In boron removal, diffusion of boron onto the reaction interface in the primary reaction determines the rate. A boron removal rate for B/10 to 0.1 ppm of 45 kg/h as maximum was achieved. The derived silicon has met the requirement. (NEDO)

Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

International Nuclear Information System (INIS)

Volynets, Oleksandr

2012-01-01

Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

Methods to improve and understand the sensitivity of high purity germanium detectors for searches of rare events

Energy Technology Data Exchange (ETDEWEB)

Volynets, Oleksandr

2012-07-27

Observation of neutrinoless double beta-decay could answer fundamental questions on the nature of neutrinos. High purity germanium detectors are well suited to search for this rare process in germanium. Successful operation of such experiments requires a good understanding of the detectors and the sources of background. Possible background sources not considered before in the presently running GERDA high purity germanium detector experiment were studied. Pulse shape analysis using artificial neural networks was used to distinguish between signal-like and background-like events. Pulse shape simulation was used to investigate systematic effects influencing the efficiency of the method. Possibilities to localize the origin of unwanted radiation using Compton back-tracking in a granular detector system were examined. Systematic effects in high purity germanium detectors influencing their performance have been further investigated using segmented detectors. The behavior of the detector response at different operational temperatures was studied. The anisotropy effects due to the crystallographic structure of germanium were facilitated in a novel way to determine the orientation of the crystallographic axes.

Self-Healing, High-Permittivity Silicone Dielectric Elastomer

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Skov, Anne Ladegaard

2016-01-01

possesses high dielectric permittivity and consists of an interpenetrating polymer network of silicone elastomer and ionic silicone species that are cross-linked through proton exchange between amines and acids. The ionically cross-linked silicone provides self-healing properties after electrical breakdown...... or cuts made directly to the material due to the reassembly of the ionic bonds that are broken during damage. The dielectric elastomers presented in this paper pave the way to increased lifetimes and the ability of dielectric elastomers to survive millions of cycles in high-voltage conditions....

High resolution gamma-ray spectroscopy at high count rates with a prototype High Purity Germanium detector

Science.gov (United States)

Cooper, R. J.; Amman, M.; Vetter, K.

2018-04-01

High-resolution gamma-ray spectrometers are required for applications in nuclear safeguards, emergency response, and fundamental nuclear physics. To overcome one of the shortcomings of conventional High Purity Germanium (HPGe) detectors, we have developed a prototype device capable of achieving high event throughput and high energy resolution at very high count rates. This device, the design of which we have previously reported on, features a planar HPGe crystal with a reduced-capacitance strip electrode geometry. This design is intended to provide good energy resolution at the short shaping or digital filter times that are required for high rate operation and which are enabled by the fast charge collection afforded by the planar geometry crystal. In this work, we report on the initial performance of the system at count rates up to and including two million counts per second.

Obtaining water with a high degree of purity by using reverse osmosis

Directory of Open Access Journals (Sweden)

Nicolae Chirilă

2011-12-01

Full Text Available In this paper, we used the method of reverse osmosis in order to obtain water with a high degree of purity. For this aim, we used the TKA 20-120ECO device. We completed physic-chemical determinations for the water of supply, as well as for the water obtained after the osmosis process. The results that we obtained are relevant and interesting.

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

International Nuclear Information System (INIS)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin

2014-01-01

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles

Highly featured amorphous silicon nanorod arrays for high-performance lithium-ion batteries

Energy Technology Data Exchange (ETDEWEB)

Soleimani-Amiri, Samaneh; Safiabadi Tali, Seied Ali; Azimi, Soheil; Sanaee, Zeinab; Mohajerzadeh, Shamsoddin, E-mail: mohajer@ut.ac.ir [Thin Film and Nanoelectronics Lab, Nanoelectronics Center of Excellence, School of Electrical and Computer Engineering, University of Tehran, Tehran 143957131 (Iran, Islamic Republic of)

2014-11-10

High aspect-ratio vertical structures of amorphous silicon have been realized using hydrogen-assisted low-density plasma reactive ion etching. Amorphous silicon layers with the thicknesses ranging from 0.5 to 10 μm were deposited using radio frequency plasma enhanced chemical vapor deposition technique. Standard photolithography and nanosphere colloidal lithography were employed to realize ultra-small features of the amorphous silicon. The performance of the patterned amorphous silicon structures as a lithium-ion battery electrode was investigated using galvanostatic charge-discharge tests. The patterned structures showed a superior Li-ion battery performance compared to planar amorphous silicon. Such structures are suitable for high current Li-ion battery applications such as electric vehicles.

A solvent-extraction module for cyclotron production of high-purity technetium-99m.

Science.gov (United States)

Martini, Petra; Boschi, Alessandra; Cicoria, Gianfranco; Uccelli, Licia; Pasquali, Micòl; Duatti, Adriano; Pupillo, Gaia; Marengo, Mario; Loriggiola, Massimo; Esposito, Juan

2016-12-01

The design and fabrication of a fully-automated, remotely controlled module for the extraction and purification of technetium-99m (Tc-99m), produced by proton bombardment of enriched Mo-100 molybdenum metallic targets in a low-energy medical cyclotron, is here described. After dissolution of the irradiated solid target in hydrogen peroxide, Tc-99m was obtained under the chemical form of 99m TcO 4 - , in high radionuclidic and radiochemical purity, by solvent extraction with methyl ethyl ketone (MEK). The extraction process was accomplished inside a glass column-shaped vial especially designed to allow for an easy automation of the whole procedure. Recovery yields were always >90% of the loaded activity. The final pertechnetate saline solution Na 99m TcO 4 , purified using the automated module here described, is within the Pharmacopoeia quality control parameters and is therefore a valid alternative to generator-produced 99m Tc. The resulting automated module is cost-effective and easily replicable for in-house production of high-purity Tc-99m by cyclotrons. Copyright © 2016 Elsevier Ltd. All rights reserved.

Synthesis of high purity monoglycerides from crude glycerol and palm stearin

Directory of Open Access Journals (Sweden)

Pakamas Chetpattananondh

2008-07-01

Full Text Available The optimum conditions for the glycerolysis of palm stearin and crude glycerol derived from biodiesel process werefound to be a reaction temperature of 200oC with a molar ratio of crude glycerol to palm stearin of 2.5:1, and a reaction timeof 20 minutes. The yield and purity of monoglycerides obtained under these conditions was satisfactory as compared withthe glycerolysis of pure glycerol. To increase the purity of monoglycerides a two-step process, removal of residual glyceroland crystallization, was proposed instead of either vacuum or molecular distillation. Residual glycerol was removed byadding hydrochloric acid followed by washing with hot water. Optimum conditions for crystallization were achieved byusing isooctane as a solvent and a turbine impeller speed of 200 rpm at a crystallization temperature of 35oC. A purity notexceeding 99 percent of monoglycerides was obtained with monopalmitin as the major product.

Subsurface oxidation for micropatterning silicon (SOMS).

Science.gov (United States)

Zhang, Feng; Sautter, Ken; Davis, Robert C; Linford, Matthew R

2009-02-03

Here we present a straightforward patterning technique for silicon: subsurface oxidation for micropatterning silicon (SOMS). In this method, a stencil mask is placed above a silicon surface. Radio-frequency plasma oxidation of the substrate creates a pattern of thicker oxide in the exposed regions. Etching with HF or KOH produces very shallow or much higher aspect ratio features on silicon, respectively, where patterning is confirmed by atomic force microscopy, scanning electron microscopy, and optical microscopy. The oxidation process itself is studied under a variety of reaction conditions, including higher and lower oxygen pressures (2 and 0.5 Torr), a variety of powers (50-400 W), different times and as a function of reagent purity (99.5 or 99.994% oxygen). SOMS can be easily executed in any normal chemistry laboratory with a plasma generator. Because of its simplicity, it may have industrial viability.

Synthesis of high purity rutile nanoparticles from medium-grade Egyptian natural ilmenite

Directory of Open Access Journals (Sweden)

Mohamed G. Shahien

2015-09-01

Full Text Available The Egyptian magmatic ilmenite is classified as a medium-grade ore. The present work is an attempt to produce a high-quality TiO2 that can be used in several industries from this medium-grade raw material using the mechanical activation, carbothermic reduction, hydrochloric acid leaching and calcination. A mixture from the ilmenite (FeTiO3 and activated carbon was milled for 30 h. This mixture was annealed at 1200 °C for one hour and the product was leached by hydrochloric acid and calcined at 600 °C for two hours. The role of the ball milling was to grind the raw ilmenite to obtain the nano size, and the carbothermic reduction was to reduce all the Fe-Ti phases to a mixture from Fe metal and TiO2. Leaching procedure was carried out to remove all the Fe metal and obtain a high-grade TiO2. After leaching and calcination of the milled and annealed mixture of FeTiO3/C under the optimal conditions, TiO2 nanoparticles with a size of 10–100 nm and purity more than 95% were obtained. The qualifications of the synthesized high purity rutile nanoparticles from the Egyptian natural ilmenite match the conditions of many industrial applications.

Large-scale synthesis of high-purity well-aligned carbon nanotubes using pyrolysis of iron(II) phthalocyanine and acetylene

Science.gov (United States)

Liu, B. C.; Lee, T. J.; Lee, S. H.; Park, C. Y.; Lee, C. J.

2003-08-01

Well-aligned carbon nanotubes (CNTs) with high purity have been produced by pyrolysis of iron(II) phthalocyanine and acetylene at 800 °C. The synthesized CNTs have a length of 75 μm and diameters ranging from 20 to 60 nm. The CNTs have a bamboo-like structure and exhibit good crystallinity of graphite sheets. The growth rate of the CNTs was rapidly increased with adding C 2H 2. Our results demonstrate that the proposed growth method is suitable to large-scale synthesis of high-purity well-aligned CNTs on various substrates.

Linear thermal expansion measurements on silicon from 6 to 340 K

International Nuclear Information System (INIS)

Lyon, K.G.; Salinger, G.L.; Swenson, C.A.; White, G.K.

1977-01-01

Linear thermal expansion measurements have been carried out from 6 to 340 K on a high-purity silicon sample using a linear absolute capacitance dilatometer. The accuracy of the measurements varies from +- 0.01 x 10 -8 K -1 at the lowest temperatures to +- 0.1 x 10 -8 K -1 or 0.1%, whichever is greater, near room temperature, and is sufficient to establish silicon as a thermal expansion standard for these temperatures. The agreement with previous data is satisfactory at low temperatures and excellent above room temperature where laser-interferometry data of comparable accuracy exist. Thermal expansions calculated from ultrasonic and heat-capacity data are preferred below 13 K where experimental problems occurred

Effect of initial grain size on dynamic recrystallization in high purity austenitic stainless steels

International Nuclear Information System (INIS)

El Wahabi, M.; Gavard, L.; Montheillet, F.; Cabrera, J.M.; Prado, J.M.

2005-01-01

The influence of initial microstructure on discontinuous dynamic recrystallization (DDRX) has been investigated by using high purity and ultra high purity austenitic stainless steels with various initial grain sizes. After uniaxial compression tests at constant strain rates and various temperatures, the steady state microstructure or the state corresponding to the maximum strain (ε = 1) attained in the test was analyzed by scanning electron microscopy aided with automated electron back scattering diffraction. Recrystallized grain size d rec and twin boundary fraction f TB measurements were carried out. The mechanical behavior was also investigated by comparing experimental stress-strain curves with various initial grain sizes. DDRX kinetics was described by the classical Avrami equation. It was concluded that larger initial grain sizes promoted a delay in the DDRX onset in the two alloys. It was also observed that the softening process progressed faster for smaller initial grain sizes. The effect of initial grain size is larger in the HP material and becomes more pronounced at low temperature

High temperature annealing effects on deep-level defects in a high purity semi-insulating 4H-SiC substrate

Energy Technology Data Exchange (ETDEWEB)

Iwamoto, Naoya, E-mail: naoya.iwamoto@smn.uio.no; Azarov, Alexander; Svensson, Bengt G. [Department of Physics, Center for Materials Science and Nanotechnology, University of Oslo, P.O. Box 1048 Blindern, N-0316 Oslo (Norway); Ohshima, Takeshi [Japan Atomic Energy Agency, 1233 Watanuki, Takasaki, 370-1292 Gunma (Japan); Moe, Anne Marie M. [Washington Mills AS, N-7300 Orkanger (Norway)

2015-07-28

Effects of high-temperature annealing on deep-level defects in a high-purity semi-insulating 4H silicon carbide substrate have been studied by employing current-voltage, capacitance-voltage, junction spectroscopy, and chemical impurity analysis measurements. Secondary ion mass spectrometry data reveal that the substrate contains boron with concentration in the mid 10{sup 15 }cm{sup −3} range, while other impurities including nitrogen, aluminum, titanium, vanadium and chromium are below their detection limits (typically ∼10{sup 14 }cm{sup −3}). Schottky barrier diodes fabricated on substrates annealed at 1400–1700 °C exhibit metal/p-type semiconductor behavior with a current rectification of up to 8 orders of magnitude at bias voltages of ±3 V. With increasing annealing temperature, the series resistance of the Schottky barrier diodes decreases, and the net acceptor concentration in the substrates increases approaching the chemical boron content. Admittance spectroscopy results unveil the presence of shallow boron acceptors and deep-level defects with levels in lower half of the bandgap. After the 1400 °C annealing, the boron acceptor still remains strongly compensated at room temperature by deep donor-like levels located close to mid-gap. However, the latter decrease in concentration with increasing annealing temperature and after 1700 °C, the boron acceptor is essentially uncompensated. Hence, the deep donors are decisive for the semi-insulating properties of the substrates, and their thermal evolution limits the thermal budget for device processing. The origin of the deep donors is not well-established, but substantial evidence supporting an assignment to carbon vacancies is presented.

Hysec Process: production of high-purity hydrogen from coke oven gas

Energy Technology Data Exchange (ETDEWEB)

Nishida, S

1984-01-01

An account is given of the development of the Hysec Process by the Kansai Netsukagaku and Mitsubishi Kakoki companies. The process is outlined and its special features noted. The initial development aim was to obtain high-purity hydrogen from coke oven gas by means of PSA. To achieve this, ways had to be found for removing the impurities in the coke oven gas and the trace amounts of oxygen which are found in the product hydrogen. The resulting hydrogen is 99.9999% pure. 3 references.

Release of Si from Silicon, a Ferrosilicon (FeSi) Alloy and a Synthetic Silicate Mineral in Simulated Biological Media

Science.gov (United States)

Herting, Gunilla; Jiang, Tao; Sjöstedt, Carin; Odnevall Wallinder, Inger

2014-01-01

Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG), an alloy (ferrosilicon, FeSi) and a mineral (aluminium silicate, AlSi) has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH)4) in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral) resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media. PMID:25225879

Release of Si from silicon, a ferrosilicon (FeSi alloy and a synthetic silicate mineral in simulated biological media.

Directory of Open Access Journals (Sweden)

Gunilla Herting

Full Text Available Unique quantitative bioaccessibility data has been generated, and the influence of surface/material and test media characteristics on the elemental release process were assessed for silicon containing materials in specific synthetic body fluids at certain time periods at a fixed loading. The metal release test protocol, elaborated by the KTH team, has previously been used for classification, ranking, and screening of different alloys and metals. Time resolved elemental release of Si, Fe and Al from particles, sized less than 50 µm, of two grades of metallurgical silicon (high purity silicon, SiHG, low purity silicon, SiLG, an alloy (ferrosilicon, FeSi and a mineral (aluminium silicate, AlSi has been investigated in synthetic body fluids of varying pH, composition and complexation capacity, simple models of for example dermal contact and digestion scenarios. Individual methods for analysis of released Si (as silicic acid, Si(OH4 in synthetic body fluids using GF-AAS were developed for each fluid including optimisation of solution pH and graphite furnace parameters. The release of Si from the two metallurgical silicon grades was strongly dependent on both pH and media composition with the highest release in pH neutral media. No similar effect was observed for the FeSi alloy or the aluminium silicate mineral. Surface adsorption of phosphate and lactic acid were believed to hinder the release of Si whereas the presence of citric acid enhanced the release as a result of surface complexation. An increased presence of Al and Fe in the material (low purity metalloid, alloy or mineral resulted in a reduced release of Si in pH neutral media. The release of Si was enhanced for all materials with Al at their outermost surface in acetic media.

High-Current-Density Vertical-Tunneling Transistors from Graphene/Highly Doped Silicon Heterostructures.

Science.gov (United States)

Liu, Yuan; Sheng, Jiming; Wu, Hao; He, Qiyuan; Cheng, Hung-Chieh; Shakir, Muhammad Imran; Huang, Yu; Duan, Xiangfeng

2016-06-01

Scalable fabrication of vertical-tunneling transistors is presented based on heterostructures formed between graphene, highly doped silicon, and its native oxide. Benefiting from the large density of states of highly doped silicon, the tunneling transistors can deliver a current density over 20 A cm(-2) . This study demonstrates that the interfacial native oxide plays a crucial role in governing the carrier transport in graphene-silicon heterostructures. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Physical and mechanical metallurgy of high purity Nb for accelerator cavities

International Nuclear Information System (INIS)

Bieler, T.R.; Wright, N.T.; Pourboghrat, F.; Compton, C.; Hartwig, K.T.; Baars, D.; Zamiri, A.; Chandrasekaran, S.; Darbandi, P.; Jiang, H.; Skoug, E.; Balachandran, S.; Ice, G.E.; Liu, W.

2010-01-01

In the past decade, high Q values have been achieved in high purity Nb superconducting radio frequency (SRF) cavities. Fundamental understanding of the physical metallurgy of Nb that enables these achievements is beginning to reveal what challenges remain to establish reproducible and cost-effective production of high performance SRF cavities. Recent studies of dislocation substructure development and effects of recrystallization arising from welding and heat treatments and their correlations with cavity performance are considered. With better fundamental understanding of the effects of dislocation substructure evolution and recrystallization on electron and phonon conduction, as well as the interior and surface states, it will be possible to design optimal processing paths for cost-effective performance using approaches such as hydroforming, which minimizes or eliminates welds in a cavity.

Fabrication and research of high purity germanium detectors with abrupt and thin diffusion layer

International Nuclear Information System (INIS)

Rodriguez Cabal, A. E.; Diaz Garcia, A.

1997-01-01

A different high purity germanium detector's fabrication method is described. A very thin diffusion film with an abrupt change of the type of conductivity is obtained. The fine diffusion layer thickness makes possibly their utilization in experimental systems in which all the data are elaborated directly on the computer. (author) [es

Crystallographic Analysis of Nucleation at Hardness Indentations in High-Purity Aluminum

DEFF Research Database (Denmark)

Xu, Chaoling; Zhang, Yubin; Lin, Fengxiang

2016-01-01

Nucleation at Vickers hardness indentations has been studied in high-purity aluminum cold-rolled 12 pct. Electron channeling contrast was used to measure the size of the indentations and to detect nuclei, while electron backscattering diffraction was used to determine crystallographic orientations....... It is found that indentations are preferential nucleation sites. The crystallographic orientations of the deformed grains affect the hardness and the nucleation potentials at the indentations. Higher hardness gives increased nucleation probabilities. Orientation relationships between nuclei developed...... they form. Finally, possible nucleation mechanisms are briefly discussed....

Thermal behavior of Ni (99.967% and 99.5% purity) deformed to an ultra-high strain by high pressure torsion

DEFF Research Database (Denmark)

Zhang, H.W.; Huang, Xiaoxu; Pippan, R.

2010-01-01

Polycrystalline Ni of two purities (99.967% (4N) and 99.5% (2N)) was deformed to an ultra-high strain of εvM = 100 (εvM, von Mises strain) by high pressure torsion at room temperature. The 4N and 2N samples at this strain are nanostructured with an average boundary spacing of 100 nm, a high density...

A Study of the Surface Quality of High Purity Copper after Heat Treatment

CERN Document Server

Aicheler, M; Atieh, S; Calatroni, S; Riddone, G; Lebet, S; Samoshkin, A

2011-01-01

Themanufacturing flow of accelerating structures for the compact linear collider, based on diamond-machined high purity copper components, include several thermal cycles (diffusion bonding, brazing of cooling circuits, baking in vacuum, etc.). The high temperature cycles may be carried out following different schedules and environments (vacuum, reducing hydrogen atmosphere, argon, etc.) and develop peculiar surface topographies which have been the object of extended observations. This study presents and discusses the results of scanning electron microscopy (SEM) and optical microscopy investigations.

Spectral response of multi-element silicon detectors

Energy Technology Data Exchange (ETDEWEB)

Ludewigt, B.A.; Rossington, C.S.; Chapman, K. [Univ. of California, Berkeley, CA (United States)

1997-04-01

Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon Si(Li) and high purity germanium detectors (HPGe) for high count rate, low noise synchrotron x-ray fluorescence applications. One of the major differences between the segmented Si detectors and the commercially available single-element Si(Li) or HPGe detectors is that hundreds of elements can be fabricated on a single Si substrate using standard silicon processing technologies. The segmentation of the detector substrate into many small elements results in very low noise performance at or near, room temperature, and the count rate of the detector is increased many-fold due to the multiplication in the total number of detectors. Traditionally, a single channel of detector with electronics can handle {approximately}100 kHz count rates while maintaining good energy resolution; the segmented detectors can operate at greater than MHz count rates merely due to the multiplication in the number of channels. One of the most critical aspects in the development of the segmented detectors is characterizing the charge sharing and charge loss that occur between the individual detector strips, and determining how these affect the spectral response of the detectors.

Low-temperature internal friction in high-purity monocrystalline and impure polycrystalline niobium after plastic deformation

International Nuclear Information System (INIS)

Wasserbaech, W.; Thompson, E.

2001-01-01

The internal friction Q -1 of plastically deformed, high-purity monocrystalline and impure polycrystalline niobium specimens was measured in the temperature range between 65 mK and about 2 K. Plastic deformation has a pronounced effect on the internal friction Q -1 of the high-purity monocrystalline specimens, and the effect has been found to be almost temperature independent. By contrast, surprisingly, the internal friction Q -1 of the impure polycrystalline specimens was found to be almost independent of the extent of plastic deformation. Comparison of the experimental results with different models of a dynamic scattering of acoustic phonons by dislocations leads to the conclusion that the results cannot be explained with the two-level tunneling model. Instead it is suggested that a strong interaction between acoustic phonons and geometrical kinks in non-screw dislocations is responsible for the observed internal friction Q -1 . (orig.)

Disgust and the moralization of purity.

Science.gov (United States)

Horberg, E J; Oveis, Christopher; Keltner, Dacher; Cohen, Adam B

2009-12-01

Guided by appraisal-based models of the influence of emotion upon judgment, we propose that disgust moralizes--that is, amplifies the moral significance of--protecting the purity of the body and soul. Three studies documented that state and trait disgust, but not other negative emotions, moralize the purity moral domain but not the moral domains of justice or harm/care. In Study 1, integral feelings of disgust, but not integral anger, predicted stronger moral condemnation of behaviors violating purity. In Study 2, experimentally induced disgust, compared with induced sadness, increased condemnation of behaviors violating purity and increased approval of behaviors upholding purity. In Study 3, trait disgust, but not trait anger or trait fear, predicted stronger condemnation of purity violations and greater approval of behaviors upholding purity. We found that, confirming the domain specificity of the disgust-purity association, disgust was unrelated to moral judgments about justice (Studies 1 and 2) or harm/care (Study 3). Finally, across studies, individuals of lower socioeconomic status (SES) were more likely than individuals of higher SES to moralize purity but not justice or harm/care.

Potential utility of eGFP-expressing NOG mice (NOG-EGFP as a high purity cancer sampling system

Directory of Open Access Journals (Sweden)

Shima Kentaro

2012-06-01

Full Text Available Abstract Purpose It is still technically difficult to collect high purity cancer cells from tumor tissues, which contain noncancerous cells. We hypothesized that xenograft models of NOG mice expressing enhanced green fluorescent protein (eGFP, referred to as NOG-EGFP mice, may be useful for obtaining such high purity cancer cells for detailed molecular and cellular analyses. Methods Pancreato-biliary cancer cell lines were implanted subcutaneously to compare the tumorigenicity between NOG-EGFP mice and nonobese diabetic/severe combined immunodeficiency (NOD/SCID mice. To obtain high purity cancer cells, the subcutaneous tumors were harvested from the mice and enzymatically dissociated into single-cell suspensions. Then, the cells were sorted by fluorescence-activated cell sorting (FACS for separation of the host cells and the cancer cells. Thereafter, the contamination rate of host cells in collected cancer cells was quantified by using FACS analysis. The viability of cancer cells after FACS sorting was evaluated by cell culture and subsequent subcutaneous reimplantation in NOG-EGFP mice. Results The tumorigenicity of NOG-EGFP mice was significantly better than that of NOD/SCID mice in all of the analyzed cell lines (p  Conclusions This method provides a novel cancer sampling system for molecular and cellular analysis with high accuracy and should contribute to the development of personalized medicine.

High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics.

Science.gov (United States)

Lefebvre, Jacques; Ding, Jianfu; Li, Zhao; Finnie, Paul; Lopinski, Gregory; Malenfant, Patrick R L

2017-10-17

Semiconducting single-walled carbon nanotubes (sc-SWCNTs) are emerging as a promising material for high-performance, high-density devices as well as low-cost, large-area macroelectronics produced via additive manufacturing methods such as roll-to-roll printing. Proof-of-concept demonstrations have indicated the potential of sc-SWCNTs for digital electronics, radiofrequency circuits, radiation hard memory, improved sensors, and flexible, stretchable, conformable electronics. Advances toward commercial applications bring numerous opportunities in SWCNT materials development and characterization as well as fabrication processes and printing technologies. Commercialization in electronics will require large quantities of sc-SWCNTs, and the challenge for materials science is the development of scalable synthesis, purification, and enrichment methods. While a few synthesis routes have shown promising results in making near-monochiral SWCNTs, gram quantities are available only for small-diameter sc-SWCNTs, which underperform in transistors. Most synthesis routes yield mixtures of SWCNTs, typically 30% metallic and 70% semiconducting, necessitating the extraction of sc-SWCNTs from their metallic counterparts in high purity using scalable postsynthetic methods. Numerous routes to obtain high-purity sc-SWCNTs from raw soot have been developed, including density-gradient ultracentrifugation, chromatography, aqueous two-phase extraction, and selective DNA or polymer wrapping. By these methods (termed sorting or enrichment), >99% sc-SWCNT content can be achieved. Currently, all of these approaches have drawbacks and limitations with respect to electronics applications, such as excessive dilution, expensive consumables, and high ionic impurity content. Excess amount of dispersant is a common challenge that hinders direct inclusion of sc-SWCNTs into electronic devices. At present, conjugated polymer extraction may represent the most practical route to sc-SWCNTs. By the use of

Local deposition of high-purity Pt nanostructures by combining electron beam induced deposition and atomic layer deposition

NARCIS (Netherlands)

Mackus, A.J.M.; Mulders, J.J.L.; Sanden, van de M.C.M.; Kessels, W.M.M.

2010-01-01

An approach for direct-write fabrication of high-purity platinum nanostructures has been developed by combining nanoscale lateral patterning by electron beam induced deposition (EBID) with area-selective deposition of high quality material by atomic layer deposition (ALD). Because virtually pure,

Spectrophotometric determination of trace and ultratrace levels of boron in silicon and chlorosilane samples

International Nuclear Information System (INIS)

Chen, J.S.; Lin, H.M.; Yang, M.H.

1991-01-01

Spectrophotometric methods for the determination of boron in the low μg/g and ng/g range in high-purity silicon and dichloro- and trichlorosilanes were investigated in detail. The procedures established involve dissolution of silicon samples and the hydrolyzed products of chlorosilane samples in hydrofluoric acid-containing reagents followed by evaporation of the silicon matrix as H 2 SiF 6 . The boron retained in the treated sample solution was then determined by a spectrophotometric method using carminic acid as a chromatic reagent. Special effort has been paid to the control of the analytical blank and reproducible determination of boron. The results indicate that addition of mannitol and proper control of the evaporation process are effective in preventing volatilization of boron during the evaporation of silicon matrix and can thus attain high recovery of boron and reproducible analysis. Through meticulous control of the analytical blank and experimental conditions, the limit of detection for boron determination with the established method can be as low as ng/g levels. Application of the methods to the determination of boron in various stages of purification of silicon and trichlorosilane as well as in borophosphosilicate film was conducted. (orig.)

Distribution of impurity elements in slag-silicon equilibria for oxidative refining of metallurgical silicon for solar cell applications

Energy Technology Data Exchange (ETDEWEB)

Johnston, M.D.; Barati, M. [Department of Materials Science and Engineering, The University of Toronto, 184 College Street, Toronto, Ont. (Canada)

2010-12-15

The possibility of refining metallurgical grade silicon to a high-purity product for solar cell applications by the slagging of impurity elements was investigated. Distribution coefficients were determined for B, Ca, Mg, Fe, K and P between magnesia or alumina saturated Al{sub 2}O{sub 3}-CaO-MgO-SiO{sub 2} and Al{sub 2}O{sub 3}-BaO-SiO{sub 2} slags and silicon at 1500 C. The partitioning of the impurity elements between molten silicon and slag was examined in terms of basicity and oxygen potential of the slag, with particular focus on the behaviour of boron and phosphorus. The experimental results showed that both of these aspects of slag chemistry have a significant influence on the distribution coefficient of B and P. Increasing the oxygen potential by additions of silica was found to increase the distribution coefficients for both B and P. Increasing the basicity of the slag was not always effective in achieving high removal of these elements from silicon as excess amounts of basic oxides lower the activity of silica and consequently the oxygen potential. The extent of this effect is such that increasing basicity can lead to a decrease in distribution coefficient. Increasing lime in the slag increased distribution coefficients for B and P, but this counterbalancing effect was such that distributions were the lowest in barium-containing slags, despite barium oxide being the most basic of the fluxes used in this study. The highest removal efficiencies achieved were of the order of 80% and 90% for B and P, respectively. It was demonstrated that for the removal of B and P from metallurgical-grade silicon to solar-grade levels, a slag mass about 5 times the mass of silicon would be required. (author)

Physical and mechanical metallurgy of high purity Nb for accelerator cavities

Directory of Open Access Journals (Sweden)

T. R. Bieler

2010-03-01

Full Text Available In the past decade, high Q values have been achieved in high purity Nb superconducting radio frequency (SRF cavities. Fundamental understanding of the physical metallurgy of Nb that enables these achievements is beginning to reveal what challenges remain to establish reproducible and cost-effective production of high performance SRF cavities. Recent studies of dislocation substructure development and effects of recrystallization arising from welding and heat treatments and their correlations with cavity performance are considered. With better fundamental understanding of the effects of dislocation substructure evolution and recrystallization on electron and phonon conduction, as well as the interior and surface states, it will be possible to design optimal processing paths for cost-effective performance using approaches such as hydroforming, which minimizes or eliminates welds in a cavity.

Report on achievements in fiscal 1999. Development of energy usage rationalizing silicon manufacturing process (Development of manufacturing technology for mass production of silicon for solar cells); 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchiyo silicon ryosanka seizo gijutsu no kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

Discussions were given on manufacture of raw material silicon for solar cells with regard to boron removal, solidification, finishing and refining of metallic impurities, refining of unutilized silicon scraps, and making them into wafers and solar cells after refining. This paper summarizes the achievements in fiscal 1999. With regard to purity deterioration due to contamination by boron containing silica powder generated during the boron removal in the manufacturing process, the facilities were modified resulting in the reduction thereof to 0.04 ppmw or less. Regarding the repetitive use of boron removing crucibles, the experiment identified the possibility of using them for more than three times. In trial fabrication of samples by using the solidification refining and cast integrated process, ingots of 550 mm square and about 300 mm high were obtained, which were sliced into 10-cm square materials for use as wafers. Measurement of the conversion efficiency has resulted in 13% or more which is almost equivalent in the center and edges of the ingot. It was revealed that solar cell wafers may be fabricated by using this process, which can use either the p-type low-resistance silicon scraps or the metallic silicon as the starting material. (NEDO)

Ultra-high-speed Optical Signal Processing using Silicon Photonics

DEFF Research Database (Denmark)

Oxenløwe, Leif Katsuo; Ji, Hua; Jensen, Asger Sellerup

with a photonic layer on top to interconnect them. For such systems, silicon is an attractive candidate enabling both electronic and photonic control. For some network scenarios, it may be beneficial to use optical on-chip packet switching, and for high data-density environments one may take advantage...... of the ultra-fast nonlinear response of silicon photonic waveguides. These chips offer ultra-broadband wavelength operation, ultra-high timing resolution and ultra-fast response, and when used appropriately offer energy-efficient switching. In this presentation we review some all-optical functionalities based...... on silicon photonics. In particular we use nano-engineered silicon waveguides (nanowires) [1] enabling efficient phasematched four-wave mixing (FWM), cross-phase modulation (XPM) or self-phase modulation (SPM) for ultra-high-speed optical signal processing of ultra-high bit rate serial data signals. We show...

Effect of microplastic deformation on the electron ultrasonic absorption in high-purity molybdenum monocrystals

International Nuclear Information System (INIS)

Pal'-Val', P.P.; Kaufmann, Kh.-J.

1983-01-01

The low temperature (100-6 K) linear absorption of ultrasound (88 kHz) by high purity molybdenum single crystals have been studied. Both unstrained samples and samples sub ected to microplastic deformation (epsilon 0 approximately 10 -4 , during 10 min, at 6 K. A new relaxation peak of absorption at 10 K has been found in strained samples

Design, construction, and operation of a laboratory scale reactorfor the production of high-purity, isotopically enriched bulksilicon

Energy Technology Data Exchange (ETDEWEB)

Ager III, J.W.; Beeman, J.W.; Hansen, W.L.; Haller, E.E.

2004-12-20

The design and operation of a recirculating flow reactor designed to convert isotopically enriched silane to polycrystalline Si with high efficiency and chemical purity is described. The starting material is SiF{sub 4}, which is enriched in the desired isotope by a centrifuge method and subsequently converted to silane. In the reactor, the silane is decomposed to silicon on the surface of a graphite starter rod (3 mm diameter) heated to 700-750 C. Flow and gas composition (0.3-0.5% silane in hydrogen) are chosen to minimize the generation of particles by homogeneous nucleation of silane and to attain uniform deposition along the length of the rod. Growth rates are 5 {micro}m/min, and the conversion efficiency is greater than 95%. A typical run produces 35 gm of polycrystalline Si deposited along a 150 mm length of the rod. After removal of the starter rod, dislocation-free single crystals are formed by the floating zone method. Crystals enriched in all 3 stable isotopes of Si have been made: {sup 28}Si (99.92%), {sup 29}Si (91.37%), and {sup 30}Si (88.25%). Concentrations of electrically active impurities (P and B) are as low as mid-10{sup 13} cm{sup -3}. Concentrations of C and O lie below 10{sup 16} and 10{sup 15} cm{sup -3}, respectively.

Precipitation of hydrides in high purity niobium after different treatments

Energy Technology Data Exchange (ETDEWEB)

Barkov, F.; Romanenko, A.; Trenikhina, Y.; Grassellino, A.

2013-01-01

Precipitation of lossy non-superconducting niobium hydrides represents a known problem for high purity niobium in superconducting applications. Using cryogenic optical and laser confocal scanning microscopy we have directly observed surface precipitation and evolution of niobium hydrides in samples after different treatments used for superconducting RF cavities for particle acceleration. Precipitation is shown to occur throughout the sample volume, and the growth of hydrides is well described by the fast diffusion-controlled process in which almost all hydrogen is precipitated at $T=140$~K within $\\sim30$~min. 120$^{\\circ}$C baking and mechanical deformation are found to affect hydride precipitation through their influence on the number of nucleation and trapping centers.

Report on 1979 result of Sunshine Project. R and D on solar power generation system (R and D on particle non-accelerated growth type silicon thin film crystal); 1979 nendo taiyoko hatsuden system no kenkyu kaihatsu seika hokokusho. Ryushi hikasoku seichogata silicon usumaku kessho no kenkyu kaihatsu

Energy Technology Data Exchange (ETDEWEB)

NONE

1980-03-01

The R and D was intended to establish the manufacturing technology of a particle non-accelerated growth type silicon thin film crystal, for the purpose of developing a technology for enabling the production of a solar power generation system, whose price is practically 1/100 compared with that of building the system with the current technology, and the R and D was also intended to build the system using such silicon material. While a simple purification method was examined for a low purity metallurgical-grade silicon, a solar-grade silicon (SOG) was developed as the new material this year, with a solar cell experimentally manufactured having a structure directly joined to the substrate material and with evaluation carried out on the characteristic of such solar cell. The application of 'gettering' was tried which was for removing harmful impurities from the substrate obtained from such material, bringing an outlook of manufacturing a solar cell with a conversion efficiency of 10%. Concerning the SOG-Si, the efficiency of 13% or higher was attained through the improvement of the manufacturing process. This was the value comparable to the case of using a conventional high purity monocrystal wafer. Further, the application of an ion implantation method was studied for the purpose of getting a low cost. (NEDO)

Variation of low temperature internal friction of microplastic deformation of high purity molybdenum single crystals

International Nuclear Information System (INIS)

Pal-Val, P.P.; Kaufmann, H.J.

1984-01-01

Amplitude and temperature spectra of ultrasound absorption in weakly deformed high purity molybdenum single crystals of different orientations were measured. The results were discussed in terms of parameter changes related to quasiparticle or dislocation oscillations, respectively, dislocation point defect interactions as well as defect generation at microplastic deformation. (author)

Variation of low temperature internal friction of microplastic deformation of high purity molybdenum single crystals

Energy Technology Data Exchange (ETDEWEB)

Pal-Val, P.P. (AN Ukrainskoj SSR, Kharkov. Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur); Kaufmann, H.J. (Akademie der Wissenschaften der DDR, Berlin)

1984-08-01

Amplitude and temperature spectra of ultrasound absorption in weakly deformed high purity molybdenum single crystals of different orientations were measured. The results were discussed in terms of parameter changes related to quasiparticle or dislocation oscillations, respectively, dislocation point defect interactions as well as defect generation at microplastic deformation.

Microcapillary Features in Silicon Alloyed High-Strength Cast Iron

Directory of Open Access Journals (Sweden)

R.K. Hasanli

2017-04-01

Full Text Available Present study explores features of silicon micro capillary in alloyed high-strength cast iron with nodular graphite (ductile iron produced in metal molds. It identified the nature and mechanism of micro liquation of silicon in a ductile iron alloyed with Nickel and copper, and demonstrated significant change of structural-quality characteristics. It was concluded that the matrix of alloyed ductile iron has a heterogeneous structure with cross reinforcement and high-silicon excrement areas.

Strengthening Purity: Moral Purity as a Mediator of Direct and Extended Cross-Group Friendships on Sexual Prejudice.

Science.gov (United States)

Vezzali, Loris; Brambilla, Marco; Giovannini, Dino; Paolo Colucci, Francesco

2017-01-01

The present research investigated whether enhanced perceptions of moral purity drive the effects of intergroup cross-group friendships on the intentions to interact with homosexuals. High-school students (N = 639) reported their direct and extended cross-group friendships with homosexuals as well as their beliefs regarding the moral character of the sexual minority. Participants further reported their desire to interact with homosexuals in the future. Results showed that both face-to-face encounters and extended contact with homosexuals increased their perceived moral purity, which in turn fostered more positive behavioral intentions. Results further revealed the specific role of moral purity in this sense, as differential perceptions along other moral domains (autonomy and community) had no mediation effects on behavioral tendencies toward homosexuals. The importance of these findings for improving intergroup relations is discussed, together with the importance of integrating research on intergroup contact and morality.

Electron beam welding of high-purity copper accelerator cells

International Nuclear Information System (INIS)

Delis, K.; Haas, H.; Schlebusch, P.; Sigismund, E.

1986-01-01

The operating conditions of accelerator cells require high thermal conductivity, low gas release in the ultrahigh vacuum, low content of low-melting metals and an extremely good surface quality. In order to meet these requirements, high-purity copper (OFHC, Grade 1, according to ASTM B 170-82 and extra specifications) is used as structural material. The prefabricated components of the accelerator cells (noses, jackets, flanges) are joined by electron beam welding, the weld seam being assessed on the basis of the same criteria as the base material. The welding procedures required depend, first, on the material and, secondly, on the geometries involved. Therefore experimental welds were made first on standardized specimens in order to study the behaviour of the material during electron beam welding and the influence of parameter variations. The welded joints of the cell design were planned on the basis of these results. Seam configuration, welding procedures and the parameters were optimized on components of original geometry. The experiments have shown that high-quality joints of this grade of copper can be produced by the electron beam welding process, if careful planning and preparation of the seams and adequate containment of the welding pool are assured. (orig.)

Facile synthesis of upconversion nanoparticles with high purity using lanthanide oleate compounds

Science.gov (United States)

Kang, Ning; Ai, Chao-Chao; Zhou, Ya-Ming; Wang, Zuo; Ren, Lei

2018-02-01

A novel strategy for preparing highly pure NaYF4-based upconversion nanoparticles (UCNPs) was developed using lanthanide oleate compounds [Ln(OA)3] as the precursor, denoted as the Ln-OA preparation method. Compared to the conventional solvothermal method for synthesizing UCNPs using lanthanide chloride compounds (LnCl3) as the precursor (denoted as the Ln-Cl method), the Ln-OA strategy exhibited the merits of high purity, reduced purification process and a uniform size in preparing core and core-shell UCNPs excited by a 980 or 808 nm near infrared (NIR) laser. This work sheds new insight on the preparation of UCNPs and promotes their application in biomedical fields.

Se-Se isoelectronic centers in high purity CdTe

Energy Technology Data Exchange (ETDEWEB)

Najjar, Rita; Andre, Regis; Mariette, Henri [CEA-CNRS, Nanophysique et Semiconducteurs, Institut Neel, 25 rue des martyrs, 38042 Grenoble (France); Golnik, Andrzej; Kossacki, Piotr; Gaj, Jan A. [Institute of Experimental Physics, University of Warsaw, Hoza 69, 00-681 Warsaw (Poland)

2010-06-15

We evidence zero-dimensional exciton states trapped on isoelectronic Se centers in CdTe quantum wells, {delta}-doped with Se. Thanks to special precautions taken to have very high purity CdTe heterostructures, it is possible to observe, in photoluminescence spectra, sharp discrete lines arising from individual centers related to the Se doping. These emission lines appear at about 40 meV below the CdTe band gap energy. The most prominent lines are attributed to the recombination of excitons bound to nearest-neighbor selenium pairs in a tetrahedral CdTe environment. This assignment is confirmed by a common linear polarization direction of the emitted light, parallel to <110>. These excitons localized on individual isoelectronic traps are good candidates as single photon emitters (copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Bulk solar grade silicon: how chemistry and physics play to get a benevolent microstructured material

Energy Technology Data Exchange (ETDEWEB)

Pizzini, S. [University of Milano-Bicocca, Department of Materials Science, Milan (Italy); Nedsilicon SpA, Osimo, Ancona (Italy)

2009-07-15

The availability of low-cost alternatives to electronic grade silicon has been and still is the condition for the extensive use of photovoltaics as an efficient sun harvesting system. The first step towards this objective was positively carried out in the 1980s and resulted in the reduction in cost and energy of the growth process using as feedstock electronic grade scraps and a variety of solidification procedures, all of which deliver a multi-crystalline material of high photovoltaic quality. The second step was an intense R and D activity aiming at defining and developing at lab scale a new variety of silicon, called ''solar grade'' silicon, which should fulfil the requirement of both cost effectiveness and high conversion efficiency. The third step involved and still involves the development of cost-effective technologies for the manufacture of solar grade silicon, in alternative to the classical Siemens route, which relays, as is well-known, to the pyrolitic decomposition of high-purity trichlorosilane and which is, also in its more advanced versions, extremely energy intensive. Aim of this paper is to give the author's viewpoint about some open questions concerning bulk solar silicon for PV applications and about challenges and chances of novel feedstocks of direct metallurgical origin. (orig.)

Contribution to the study of the conductivity of high purity water

International Nuclear Information System (INIS)

Nens, Ch.

1964-01-01

In this work a study is made more particularly of two points: the production of high purity water and the estimation of this purity by means of conductivity measurements. As far as water purification is concerned it is observed that the de-ionisation produced by ion exchange resins in mixed beds leads to a water having a lower conductivity than that obtained by distillation. This low conductivity however, measured at the column exit before the water comes into contact with air is not stable. In fact the carbon dioxide in the water gives rise to an equilibrium with production of the ions HCO 3 - , CO 3 -- . These ions are retained during the passage of the water through the resins. They reappear again at the column exit as a result of the displacement of the hydration equilibrium of CO 2 ; because of this the conductivity of the water increases with time. The water obtained by successive distillations does not behave in the same way because no carbon dioxide is present. Distillation is however a costly purification process on an industrial scale, especially if large quantities of water have to be treated. The measurement of these low conductivities is very delicate. The method employed makes use of a direct current and gives reproducible results if care is taken to exclude interfering electric fields by screening the apparatus. (author) [fr

Doping efficiency analysis of highly phosphorous doped epitaxial/amorphous silicon emitters grown by PECVD for high efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

El-Gohary, H.G.; Sivoththaman, S. [Waterloo Univ., ON (Canada). Dept. of Electrical and Computer Engineering

2008-08-15

The efficient doping of hydrogenated amorphous and crystalline silicon thin films is a key factor in the fabrication of silicon solar cells. The most popular method for developing those films is plasma enhanced chemical vapor deposition (PECVD) because it minimizes defect density and improves doping efficiency. This paper discussed the preparation of different structure phosphorous doped silicon emitters ranging from epitaxial to amorphous films at low temperature. Phosphine (PH{sub 3}) was employed as the doping gas source with the same gas concentration for both epitaxial and amorphous silicon emitters. The paper presented an analysis of dopant activation by applying a very short rapid thermal annealing process (RTP). A spreading resistance profile (SRP) and SIMS analysis were used to detect both the active dopant and the dopant concentrations, respectively. The paper also provided the results of a structural analysis for both bulk and cross-section at the interface using high-resolution transmission electron microscopy and Raman spectroscopy, for epitaxial and amorphous films. It was concluded that a unity doping efficiency could be achieved in epitaxial layers by applying an optimized temperature profile using short time processing rapid thermal processing technique. The high quality, one step epitaxial layers, led to both high conductive and high doping efficiency layers.

Streamer knotwilg branching: sudden transition in morphology of positive streamers in high-purity nitrogen

International Nuclear Information System (INIS)

Heijmans, L C J; Clevis, T T J; Nijdam, S; Van Veldhuizen, E M; Ebert, U

2015-01-01

We describe a peculiar branching phenomenon in positive repetitive streamer discharges in high purity nitrogen. We name it knotwilg branching after the Dutch word for a pollard willow tree. In a knotwilg branching a thick streamer suddenly splits into many thin streamers. Under some conditions this happens for all streamers in a discharge at about the same distance from the high-voltage electrode tip. At this distance, the thick streamers suddenly bend sharply and appear to propagate over a virtual surface surrounding the high-voltage electrode, rather than following the background electric field lines. From these bent thick streamers many, much thinner, streamers emerge that roughly follow the background electric field lines, creating the characteristic knotwilg branching. We have only found this particular morphology in high purity nitrogen at pressures in the range 50 to 200 mbar and for pulse repetition rates above 1 Hz; the experiments were performed for an electrode distance of 16 cm and for fast voltage pulses of 20 or 30 kV. These observations clearly disagree with common knowledge on streamer propagation. We have analyzed the data of several tens of thousands of discharges to clarify the phenomena. We also present some thoughts on how the ionization of the previous discharges could concentrate into some pre-ionization region near the needle electrode and create the knotwilg morphology, but we present no final explanation. (paper)

Functional silicone copolymers and elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Daugaard, Anders Egede; Hvilsted, Søren

Dielectric elastomers (DEs) are a new and promising transducer technology and are often referred to as ‘artificial muscles’, due to their ability to undergo large deformations when stimulated by electric fields. DEs consist of a soft and thin elastomeric film sandwiched between compliant electrodes......, thereby forming a capacitor [1]. Silicone elastomers are one of the most used materials for DEs due to their high efficiency, fast response times and low viscous losses. The major disadvantage of silicone elastomers is that they possess relatively low dielectric permittivity, which means that a high...... electrical field is necessary to operate the DE. The necessary electrical field can be lowered by creating silicone elastomers with higher dielectric permittivity, i.e. with a higher energy density.The aim of this work is to create new and improved silicone elastomers with high dielectric permittivity...

High purity hydrogen production system by the PSA method

Energy Technology Data Exchange (ETDEWEB)

1986-01-01

In a process developed by Nippon Steel, coke oven gas is compressed and purified of tarry matter, sulphur compounds and gum-formers by adsorption. It is then passed through a three-tower pressure-swing adsorption system to recover hydrogen whose purity can be selected in the range 99 to 99.999%. A composite adsorption agent is used.

Super soft silicone elastomers with high dielectric permittivity

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Hvilsted, Søren

2015-01-01

Dielectric elastomers (DEs) have many favourable properties. The obstacle of high driving voltages, however, limits the commercial viability of the technology at present. Driving voltage can be lowered by decreasing the Young’s modulus and increasing the dielectric permittivity of silicone...... elastomers. A decrease in Young’s modulus, however, is often accompanied by the loss of mechanical stability and thereby the lifetime of the DE. New soft elastomer matrices with high dielectric permittivity and low Young’s modulus, with no loss of mechanical stability, were prepared by two different...... approaches using chloropropyl-functional silicone polymers. The first approach was based on synthesised chloropropyl-functional copolymers that were cross-linkable and thereby formed the basis of new silicone networks with high dielectric permittivity (e.g. a 43% increase). These networks were soft without...

A fundamental self-generated quenching center for lanthanide-doped high-purity solids

International Nuclear Information System (INIS)

Auzel, F.

2002-01-01

An intrinsic self-generated quenching center for lanthanide-doped high-purity solids is presented for transitions, which cannot be quenched by cross-relaxation. This center, in fact a cluster-like pair of active centers, is shown to come from a particular multiphonon-assisted energy transfer between them. Being due to the vibronic properties of the host it cannot be suppressed. Its role in lanthanide first excited states self-quenching is analyzed and a simple mathematical expression is derived. This law is compared with experimental results for self-quenching in Er-doped fluorophosphate glasses

Measurement of oxide-layer thickness of internal granules in high-purity aluminium

International Nuclear Information System (INIS)

Takacs, S.; Ditroi, F.; Mahunka, I.

1989-01-01

Charged-particle activation analysis was used for the determination of bulk oxygen concentration in aluminium. High-purity aluminium samples and mixtures containing different amounts of alumina were irradiated by 13 MeV 3 He particles. The aim of the investigation was to determine the oxide-layer thickness on the surface of internal aluminium granules. The measurement was carried out by determining the bulk oxygen concentration in the samples, and calculating the oxide-layer thickness, by using model conditions about the microstructure of the aluminium samples. (author) 5 refs

Achievement report for fiscal 1999 on the development of silicon manufacturing process rationalizing energy utilization. Research and study on analysis to put silicon raw material manufacturing technology for solar cells into practical use; 1999 nendo energy shiyo gorika silicon seizo process kaihatsu seika hokokusho. Taiyo denchi silicon genryo seizo gijutsu no jitsuyoka kaiseki ni kansuru chosa kenkyu

Energy Technology Data Exchange (ETDEWEB)

NONE

2000-03-01

In order to support the development and practical application of a mass production technology for manufacturing silicon raw materials for solar cells, research and study were performed on trends of developing the related technologies, and movements in markets and industries. This paper reports the achievements thereof in fiscal 1999. Markets for solar cells are growing favorably, and the worldwide solar cell production in 1999 was 200 MWp, of which 80% or more is occupied by crystalline silicon solar cell. While development of the manufacturing technology for SOG-Si mass-production is in the stage of operation research of pilot plants, it has been verified that problems of impurity contamination was resolved, and high-purity silicon can be manufactured. In developing the silicon scrap utilization technology and a technology to integrate silicon refinement with casting, a conversion efficiency of 14% or higher was acquired in prototype sample substrates. It has been verified that a variety of raw materials can be dealt with by using the above technology, which has a possibility of cost reduction. In developing a substrate manufacturing technology, a great progress has been made in enhancing the productivity and reducing the cost by developing the continuous casting in the electromagnetic casting and the automation technology. (NEDO)

High performance high-κ/metal gate complementary metal oxide semiconductor circuit element on flexible silicon

KAUST Repository

Sevilla, Galo T.

2016-02-29

Thinned silicon based complementary metal oxide semiconductor(CMOS)electronics can be physically flexible. To overcome challenges of limited thinning and damaging of devices originated from back grinding process, we show sequential reactive ion etching of silicon with the assistance from soft polymeric materials to efficiently achieve thinned (40 μm) and flexible (1.5 cm bending radius) silicon based functional CMOSinverters with high-κ/metal gate transistors. Notable advances through this study shows large area of silicon thinning with pre-fabricated high performance elements with ultra-large-scale-integration density (using 90 nm node technology) and then dicing of such large and thinned (seemingly fragile) pieces into smaller pieces using excimer laser. The impact of various mechanical bending and bending cycles show undeterred high performance of flexible siliconCMOSinverters. Future work will include transfer of diced silicon chips to destination site, interconnects, and packaging to obtain fully flexible electronic systems in CMOS compatible way.

Obtaining high purity silica from rice hulls

Directory of Open Access Journals (Sweden)

José da Silva Júnior

2010-01-01

Full Text Available Many routes for extracting silica from rice hulls are based on direct calcining. These methods, though, often produce silica contaminated with inorganic impurities. This work presents the study of a strategy for obtaining silica from rice hulls with a purity level adequate for applications in electronics. The technique is based on two leaching steps, using respectively aqua regia and Piranha solutions, which extract the organic matrix and inorganic impurities. The material was characterized by Fourier-transform infrared spectroscopy (FTIR, powder x-ray diffraction (XRD, x-ray fluorescence (XRF, scanning electron microscopy (SEM, particle size analysis by laser diffraction (LPSA and thermal analysis.

Process development for high-efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Gee, J.M.; Basore, P.A.; Buck, M.E.; Ruby, D.S.; Schubert, W.K.; Silva, B.L.; Tingley, J.W.

1991-12-31

Fabrication of high-efficiency silicon solar cells in an industrial environment requires a different optimization than in a laboratory environment. Strategies are presented for process development of high-efficiency silicon solar cells, with a goal of simplifying technology transfer into an industrial setting. The strategies emphasize the use of statistical experimental design for process optimization, and the use of baseline processes and cells for process monitoring and quality control. 8 refs.

Neutron activation determination of impurities in high-purity bismuth with separation of matrix in form of hydroxide

International Nuclear Information System (INIS)

Artyukhin, P.I.; Shavinskij, B.M.; Mityakin, Yu.L.

1979-01-01

The technique of neutron activation determination of 15 impurity elements (Au, Ag, Ba, Cd, Co, Cs, Cu, Hg, K, Na, Ni, Se, Sr, Te, Zn) in high-purity bismuth (impurity content is approximately 10 -6 -10 -10 %) is presented. Bismuth hydroxide precipitation by ammonia from nitric acid solutions was used to separate bismuth from alkali, alkaline earth metals and elements forming stable ammines. Gold, selenium and tellurium are isolated in the form of metals at reduction by muriatic hydrazine. Results of analyzing two samples of special purity bismuth are presented. Neutron flux comprised 0.8-1x10 13 n/cm 2 xs. Radiation time was equal to 90 hours

The element analysis of high purity beryllium by method of laser mass-spectrometry

International Nuclear Information System (INIS)

Virich, V.D.; Kisel', O.V.; Kovtun, K.V.; Pugachev, N.S.; Yakobson, L.A.

2003-01-01

The operation is devoted to examination of a possibility of the analysis of element composition pure and high purity model of a beryllium is model by a method of laser mass spectrometry. The advantages of a method in a part of finding of a small amount of admixtures in comparison with other modes of the analysis are exhibited. The possibility of quantitative definition of a content in beryllium samples of gas-making admixtures-C,N,O surveyed

Perfomance of a high purity germanium multi-detector telescope for long range particles

International Nuclear Information System (INIS)

Riepe, G.; Protic, D.; Suekoesd, C.; Didelez, J.P.; Frascaria, N.; Gerlic, E.; Hourani, E.; Morlet, M.

1980-01-01

A telescope of stacked high purity germanium detectors designed for long range charged particles was tested using medium energy protons. Particle identification and the rejection of the low energy tail could be accomplished on-line allowing the measurement of complex spectra. The efficiency of the detector stack for protons was measured up to 156 MeV incoming energy. The various factors affecting the energy resolution are discussed and their estimated contributions are compared with the experimental results

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-10-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Flat-plate solar array project. Volume 2: Silicon material

Science.gov (United States)

Lutwack, R.

1986-01-01

The goal of the Silicon Material Task, a part of the Flat Plate Solar Array (FSA) Project, was to develop and demonstate the technology for the low cost production of silicon of suitable purity to be used as the basic material for the manufacture of terrestrial photovoltaic solar cells. Summarized are 11 different processes for the production of silicon that were investigated and developed to varying extent by industrial, university, and Government researchers. The silane production section of the Union Carbide Corp. (UCC) silane process was developed completely in this program. Coupled with Siemens-type chemical vapor deposition reactors, the process was carried through the pilot stage. The overall UCC process involves the conversion of metallurgical-grade silicon to silane followed by decomposition of the silane to purified silicon. The other process developments are described to varying extents. Studies are reported on the effects of impurities in silicon on both silicon-material properties and on solar cell performance. These studies on the effects of impurities yielded extensive information and models for relating specific elemental concentrations to levels of deleterious effects.

Low-temperature positron-lifetime studies of proton-irradiated silicon

DEFF Research Database (Denmark)

Mäkinen, S.; Rajainmäki, H.; Linderoth, Søren

1990-01-01

The positron-lifetime technique has been used to identify defects created in high-purity single-crystal silicon by irradiation with 12-MeV protons at 15 K, and the evolution of the defects has been studied by subsequent annealings between 20 and 650 K. Two clear annealing steps were seen...... in the samples, the first starting at 100 K and the other at 400 K. The first is suggested to be a result of the migration of free, negatively charged monovacancies, and the second is connected to the annealing of some vacancy-impurity complexes, probably negatively charged vacancy-oxygen pairs. The specific...

Superconducting radio-frequency cavities made from medium and low-purity niobium ingots

Science.gov (United States)

Ciovati, Gianluigi; Dhakal, Pashupati; Myneni, Ganapati R.

2016-06-01

Superconducting radio-frequency cavities made of ingot niobium with residual resistivity ratio (RRR) greater than 250 have proven to have similar or better performance than fine-grain Nb cavities of the same purity, after standard processing. The high purity requirement contributes to the high cost of the material. As superconducting accelerators operating in continuous-wave typically require cavities to operate at moderate accelerating gradients, using lower purity material could be advantageous not only to reduce cost but also to achieve higher Q 0-values. In this contribution we present the results from cryogenic RF tests of 1.3-1.5 GHz single-cell cavities made of ingot Nb of medium (RRR = 100-150) and low (RRR = 60) purity from different suppliers. Cavities made of medium-purity ingots routinely achieved peak surface magnetic field values greater than 70 mT with an average Q 0-value of 2 × 1010 at 2 K after standard processing treatments. The performances of cavities made of low-purity ingots were affected by significant pitting of the surface after chemical etching.

Improvements in numerical modelling of highly injected crystalline silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Altermatt, P.P. [University of New South Wales, Centre for Photovoltaic Engineering, 2052 Sydney (Australia); Sinton, R.A. [Sinton Consulting, 1132 Green Circle, 80303 Boulder, CO (United States); Heiser, G. [University of NSW, School of Computer Science and Engineering, 2052 Sydney (Australia)

2001-01-01

We numerically model crystalline silicon concentrator cells with the inclusion of band gap narrowing (BGN) caused by injected free carriers. In previous studies, the revised room-temperature value of the intrinsic carrier density, n{sub i}=1.00x10{sup 10}cm{sup -3}, was inconsistent with the other material parameters of highly injected silicon. In this paper, we show that high-injection experiments can be described consistently with the revised value of n{sub i} if free-carrier induced BGN is included, and that such BGN is an important effect in silicon concentrator cells. The new model presented here significantly improves the ability to model highly injected silicon cells with a high level of precision.

The determination of boron in aluminium of high purity

International Nuclear Information System (INIS)

Cook, E.B.T.; Holan, H.

1977-01-01

A description is given of the investigations that led to the development of chemical methods for the determination of boron within the range 0,25 to 1,0 p.p.m. in aluminium of high purity. Methods were developed that incorporated fluorimetry, directly in solutions containing aluminium and after separation of boron by liquid-liquid extraction into 2-ethyl-1,3 hexanediol. A published spectrophotometric method, involving extraction of the BF 4 sup(-) complex with methylene blue into dichloroethane, was modified for application to alluminium samples. Details of this modified procedure and the fluorimetric-extraction procedure are appended. The precision of the methylene-blue method is about 6 percent relative and is recommended for precision and speed in preference to others. Separation of boron by distillation and spectrophotometric determination with curcumin gave low values in comparison with those obtained by the other methods. Agreement between the boron values obtained on the samples tested was good for the fluorimetric and methylene-blue spectrophotometric methods

Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

International Nuclear Information System (INIS)

Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

2008-01-01

Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

High surface area silicon materials: fundamentals and new technology.

Science.gov (United States)

Buriak, Jillian M

2006-01-15

Crystalline silicon forms the basis of just about all computing technologies on the planet, in the form of microelectronics. An enormous amount of research infrastructure and knowledge has been developed over the past half-century to construct complex functional microelectronic structures in silicon. As a result, it is highly probable that silicon will remain central to computing and related technologies as a platform for integration of, for instance, molecular electronics, sensing elements and micro- and nanoelectromechanical systems. Porous nanocrystalline silicon is a fascinating variant of the same single crystal silicon wafers used to make computer chips. Its synthesis, a straightforward electrochemical, chemical or photochemical etch, is compatible with existing silicon-based fabrication techniques. Porous silicon literally adds an entirely new dimension to the realm of silicon-based technologies as it has a complex, three-dimensional architecture made up of silicon nanoparticles, nanowires, and channel structures. The intrinsic material is photoluminescent at room temperature in the visible region due to quantum confinement effects, and thus provides an optical element to electronic applications. Our group has been developing new organic surface reactions on porous and nanocrystalline silicon to tailor it for a myriad of applications, including molecular electronics and sensing. Integration of organic and biological molecules with porous silicon is critical to harness the properties of this material. The construction and use of complex, hierarchical molecular synthetic strategies on porous silicon will be described.

Some aspects of the metal purity in high strength Al-alloys

International Nuclear Information System (INIS)

Banizs, K.; Csernay-Balint, J.; Voeroes, G.

1990-01-01

The effect of Fe and Si on the properties of some high strength age-hardenable Al-alloys was investigated. It was found that a certain quantity (> 0.15 %) of Fe is advantageous to the formation of the cell-structure in the cast ingot both in the AlCuMg and AlZnMgCu alloys. An increased Fe-content causes a finer cell-structure. A higher Fe:Si ratio results in more homogeneous cell size distribution. Higher Si-content in the alloy decreases the favourable cast parameter range and increases the inclination to cracking of large diameter (> 270 mm) ingots. The reason of the correlation found between metal purity and mechanical properties is discussed

Mesophase Formation Stabilizes High-purity Magic-sized Clusters

KAUST Repository

Nevers, Douglas R.; Williamson, Curtis B.; Savitzky, Benjamin H; Hadar, Ido; Banin, Uri; Kourkoutis, Lena F.; Hanrath, Tobias; Robinson, Richard D.

2018-01-01

Magic-sized clusters (MSCs) are renowned for their identical size and closed-shell stability that inhibit conventional nanoparticle (NP) growth processes. Though MSCs have been of increasing interest, understanding the reaction pathways toward their nucleation and stabilization is an outstanding issue. In this work, we demonstrate that high concentration synthesis (1000 mM) promotes a well-defined reaction pathway to form high-purity MSCs (>99.9%). The MSCs are resistant to typical growth and dissolution processes. Based on insights from in-situ X-ray scattering analysis, we attribute this stability to the accompanying production of a large, hexagonal organic-inorganic mesophase (>100 nm grain size) that arrests growth of the MSCs and prevents NP growth. At intermediate concentrations (500 mM), the MSC mesophase forms, but is unstable, resulting in NP growth at the expense of the assemblies. These results provide an alternate explanation for the high stability of MSCs. Whereas the conventional mantra has been that the stability of MSCs derives from the precise arrangement of the inorganic structures (i.e., closed-shell atomic packing), we demonstrate that anisotropic clusters can also be stabilized by self-forming fibrous mesophase assemblies. At lower concentration (<200 mM or >16 acid-to-metal), MSCs are further destabilized and NPs formation dominates that of MSCs. Overall, the high concentration approach intensifies and showcases inherent concentration-dependent surfactant phase behavior that is not accessible in conventional (i.e., dilute) conditions. This work provides not only a robust method to synthesize, stabilize, and study identical MSC products, but also uncovers an underappreciated stabilizing interaction between surfactants and clusters.

Mesophase Formation Stabilizes High-purity Magic-sized Clusters

KAUST Repository

Nevers, Douglas R.

2018-01-27

Magic-sized clusters (MSCs) are renowned for their identical size and closed-shell stability that inhibit conventional nanoparticle (NP) growth processes. Though MSCs have been of increasing interest, understanding the reaction pathways toward their nucleation and stabilization is an outstanding issue. In this work, we demonstrate that high concentration synthesis (1000 mM) promotes a well-defined reaction pathway to form high-purity MSCs (>99.9%). The MSCs are resistant to typical growth and dissolution processes. Based on insights from in-situ X-ray scattering analysis, we attribute this stability to the accompanying production of a large, hexagonal organic-inorganic mesophase (>100 nm grain size) that arrests growth of the MSCs and prevents NP growth. At intermediate concentrations (500 mM), the MSC mesophase forms, but is unstable, resulting in NP growth at the expense of the assemblies. These results provide an alternate explanation for the high stability of MSCs. Whereas the conventional mantra has been that the stability of MSCs derives from the precise arrangement of the inorganic structures (i.e., closed-shell atomic packing), we demonstrate that anisotropic clusters can also be stabilized by self-forming fibrous mesophase assemblies. At lower concentration (<200 mM or >16 acid-to-metal), MSCs are further destabilized and NPs formation dominates that of MSCs. Overall, the high concentration approach intensifies and showcases inherent concentration-dependent surfactant phase behavior that is not accessible in conventional (i.e., dilute) conditions. This work provides not only a robust method to synthesize, stabilize, and study identical MSC products, but also uncovers an underappreciated stabilizing interaction between surfactants and clusters.

Superconducting radio-frequency cavities made from medium and low-purity niobium ingots

International Nuclear Information System (INIS)

Ciovati, Gianluigi; Dhakal, Pashupati; Myneni, Ganapati R

2016-01-01

Superconducting radio-frequency cavities made of ingot niobium with residual resistivity ratio (RRR) greater than 250 have proven to have similar or better performance than fine-grain Nb cavities of the same purity, after standard processing. The high purity requirement contributes to the high cost of the material. As superconducting accelerators operating in continuous-wave typically require cavities to operate at moderate accelerating gradients, using lower purity material could be advantageous not only to reduce cost but also to achieve higher Q 0 -values. In this contribution we present the results from cryogenic RF tests of 1.3–1.5 GHz single-cell cavities made of ingot Nb of medium (RRR = 100–150) and low (RRR = 60) purity from different suppliers. Cavities made of medium-purity ingots routinely achieved peak surface magnetic field values greater than 70 mT with an average Q 0 -value of 2 × 10 10 at 2 K after standard processing treatments. The performances of cavities made of low-purity ingots were affected by significant pitting of the surface after chemical etching. (paper)

Tuning for optimal performance in angle control, uniformity, and energy purity

International Nuclear Information System (INIS)

Liebert, Reuel B.; Olson, Joseph C.; Arevalo, Edwin A.; Downey, Daniel F.

2005-01-01

Advances in reducing the sizes of device structures and line widths place increasing demands on the accuracy of dopant placement and the control of dopant motion during activation anneals. Serial process high current ion implantation systems seek to produce beams in which the angles are controlled to high precision avoiding the angles introduced by conical structures used for holding wafers on spinning discs in batch systems. However, ion optical corrections and control of incident beam angle, dose uniformity, high throughput and energy purity often present apparently contradictory requirements in machine design. Data is presented to illustrate that tuning procedures can be used to simultaneously optimize angle purity in both x and y planes as well as control energy purity and dose uniformity

Effect of Aluminum Purity on the Pore Formation of Porous Anodic Alumina

International Nuclear Information System (INIS)

Kim, Byeol; Lee, Jin Seok

2014-01-01

Anodic alumina oxide (AAO), a self-ordered hexagonal array, has various applications in nanofabrication such as the fabrication of nanotemplates and other nanostructures. In order to obtain highly ordered porous alumina membranes, a two-step anodization or prepatterning of aluminum are mainly conducted with straight electric field. Electric field is the main driving force for pore growth during anodization. However, impurities in aluminum can disturb the direction of the electric field. To confirm this, we anodized two different aluminum foil samples with high purity (99.999%) and relatively low purity (99.8%), and compared the differences in the surface morphologies of the respective aluminum oxide membranes produced in different electric fields. Branched pores observed in porous alumina surface which was anodized in low-purity aluminum and the size; dimensions of the pores were found to be usually smaller than those obtained from high-purity aluminum. Moreover, anodization at high voltage proceeds to a significant level of conversion because of the high speed of the directional electric field. Consequently, anodic alumina membrane of a specific morphology, i. e., meshed pore, was produced

Effect of Aluminum Purity on the Pore Formation of Porous Anodic Alumina

Energy Technology Data Exchange (ETDEWEB)

Kim, Byeol; Lee, Jin Seok [Sookmyung Women' s Univ., Seoul (Korea, Republic of)

2014-02-15

Anodic alumina oxide (AAO), a self-ordered hexagonal array, has various applications in nanofabrication such as the fabrication of nanotemplates and other nanostructures. In order to obtain highly ordered porous alumina membranes, a two-step anodization or prepatterning of aluminum are mainly conducted with straight electric field. Electric field is the main driving force for pore growth during anodization. However, impurities in aluminum can disturb the direction of the electric field. To confirm this, we anodized two different aluminum foil samples with high purity (99.999%) and relatively low purity (99.8%), and compared the differences in the surface morphologies of the respective aluminum oxide membranes produced in different electric fields. Branched pores observed in porous alumina surface which was anodized in low-purity aluminum and the size; dimensions of the pores were found to be usually smaller than those obtained from high-purity aluminum. Moreover, anodization at high voltage proceeds to a significant level of conversion because of the high speed of the directional electric field. Consequently, anodic alumina membrane of a specific morphology, i. e., meshed pore, was produced.

High Purity Hydrogen Production with In-Situ Carbon Dioxide and Sulfur Capture in a Single Stage Reactor

Energy Technology Data Exchange (ETDEWEB)

Nihar Phalak; Shwetha Ramkumar; Daniel Connell; Zhenchao Sun; Fu-Chen Yu; Niranjani Deshpande; Robert Statnick; Liang-Shih Fan

2011-07-31

Enhancement in the production of high purity hydrogen (H{sub 2}) from fuel gas, obtained from coal gasification, is limited by thermodynamics of the water gas shift (WGS) reaction. However, this constraint can be overcome by conducting the WGS in the presence of a CO{sub 2}-acceptor. The continuous removal of CO{sub 2} from the reaction mixture helps to drive the equilibrium-limited WGS reaction forward. Since calcium oxide (CaO) exhibits high CO{sub 2} capture capacity as compared to other sorbents, it is an ideal candidate for such a technique. The Calcium Looping Process (CLP) developed at The Ohio State University (OSU) utilizes the above concept to enable high purity H{sub 2} production from synthesis gas (syngas) derived from coal gasification. The CLP integrates the WGS reaction with insitu CO{sub 2}, sulfur and halide removal at high temperatures while eliminating the need for a WGS catalyst, thus reducing the overall footprint of the hydrogen production process. The CLP comprises three reactors - the carbonator, where the thermodynamic constraint of the WGS reaction is overcome by the constant removal of CO{sub 2} product and high purity H{sub 2} is produced with contaminant removal; the calciner, where the calcium sorbent is regenerated and a sequestration-ready CO{sub 2} stream is produced; and the hydrator, where the calcined sorbent is reactivated to improve its recyclability. As a part of this project, the CLP was extensively investigated by performing experiments at lab-, bench- and subpilot-scale setups. A comprehensive techno-economic analysis was also conducted to determine the feasibility of the CLP at commercial scale. This report provides a detailed account of all the results obtained during the project period.

Silicon-embedded copper nanostructure network for high energy storage

Science.gov (United States)

Yu, Tianyue

2016-03-15

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Silicon-embedded copper nanostructure network for high energy storage

Energy Technology Data Exchange (ETDEWEB)

Yu, Tianyue

2018-01-23

Provided herein are nanostructure networks having high energy storage, electrochemically active electrode materials including nanostructure networks having high energy storage, as well as electrodes and batteries including the nanostructure networks having high energy storage. According to various implementations, the nanostructure networks have high energy density as well as long cycle life. In some implementations, the nanostructure networks include a conductive network embedded with electrochemically active material. In some implementations, silicon is used as the electrochemically active material. The conductive network may be a metal network such as a copper nanostructure network. Methods of manufacturing the nanostructure networks and electrodes are provided. In some implementations, metal nanostructures can be synthesized in a solution that contains silicon powder to make a composite network structure that contains both. The metal nanostructure growth can nucleate in solution and on silicon nanostructure surfaces.

Automation of the Characterization of High Purity Germanium Detectors

Science.gov (United States)

Dugger, Charles ``Chip''

2014-09-01

Neutrinoless double beta decay is a rare hypothesized process that may yield valuable insight into the fundamental properties of the neutrino. Currently there are several experiments trying to observe this process, including the Majorana DEMONSTRAOR experiment, which uses high purity germanium (HPGe) detectors to generate and search for these events. Because the event happens internally, it is essential to have the lowest background possible. This is done through passive detector shielding, as well as event discrimination techniques that distinguish between multi-site events characteristic of gamma-radiation, and single-site events characteristic of neutrinoless double beta decay. Before fielding such an experiment, the radiation response of the detectors must be characterized. A robotic arm is being tested for future calibration of HPGe detectors. The arm will hold a source at locations relative to the crystal while data is acquired. Several radioactive sources of varying energy levels will be used to determine the characteristics of the crystal. In this poster, I will present our work with the robot, as well as the characterization of data we took with an underground HPGe detector at the WIPP facility in Carlsbad, NM (2013). Neutrinoless double beta decay is a rare hypothesized process that may yield valuable insight into the fundamental properties of the neutrino. Currently there are several experiments trying to observe this process, including the Majorana DEMONSTRAOR experiment, which uses high purity germanium (HPGe) detectors to generate and search for these events. Because the event happens internally, it is essential to have the lowest background possible. This is done through passive detector shielding, as well as event discrimination techniques that distinguish between multi-site events characteristic of gamma-radiation, and single-site events characteristic of neutrinoless double beta decay. Before fielding such an experiment, the radiation response of

Recovery of high purity proteins from polyacrylamide gels using ultraviolet scanning densitometry

International Nuclear Information System (INIS)

Bartolini, P.; Arkaten, R.; Ribela, M.T.C.P.

1988-07-01

We present here a technique for the purification of proteins carried out by a quantitative analytical method used in conjunction with a preparative gel electrophoresis. Both methods employ densitometric ultraviolet scanning of unstained protein bands, a procedure wich is particulary suitable for the purification and recovery of biologically active polypeptides. In short, the purified extracted protein, isolated in a segment cut out from a preparative gel, is recovered by a second (reversed) electrophoresis. We performed the extractions and recoveries of different amounts of two standard proteins (BSA and STI) and a polypeptide hormone (hGH). Our main interest, especially for the hormone is the complete protein recovery with retention of bio and immunoactivity and high purity. For the proteins tested, the mean recovery was of 93 + - 5% obtaining a mean purity of 95 + - 7%. We conclude that the proposed method should have interesting applications, particularly in the obtention of very pure hormones, as are needed for radioligand assays, for radiolabelling and specific antibody raising. We emphasize the simplicity and rapidity of the method (the entire preparative process: first electrophoresis, UV scanning and reversed electrophoresis can be performed in approximately six hours) and its efficiency in recovering pure proteins even on a milligram scale. We thank the support from the IAEA (4299/RB) and FINEP (43.86.0351.00) and CENE (Brazil). (author) [pt

Corrosion of silicon nitride in high temperature alkaline solutions

Energy Technology Data Exchange (ETDEWEB)

Qiu, Liyan, E-mail: liyan.qiu@cnl.ca; Guzonas, Dave A.; Qian, Jing

2016-08-01

The corrosion of silicon nitride (Si{sub 3}N{sub 4}) in alkaline solutions was studied at temperatures from 60 to 300 °C. Si{sub 3}N{sub 4} experienced significant corrosion above 100 °C. The release rates of silicon and nitrogen follow zero order reaction kinetics and increase with increasing temperature. The molar ratio of dissolved silicon and nitrogen species in the high temperature solutions is the same as that in the solid phase (congruent dissolution). The activation energy for silicon and nitrogen release rates is 75 kJ/mol which agrees well with that of silica dissolution. At 300 °C, the release of aluminum is observed and follows first order reaction kinetics while other minor constituents including Ti and Y are highly enriched on the corrosion films due to the low solubility of their oxides.

Nuclear radiation detectors using high resistivity neutron transmutation doped silicon

International Nuclear Information System (INIS)

Gessner, T.; Irmer, K.

1983-01-01

A method for the production of semiconductor detectors based on high resistivity n-type silicon is described. The n-type silicon is produced by neutron irradiation of p-type silicon. The detectors are produced by planar technique. They are suitable for the spectrometry of alpha particles and for the pulse count measurement of beta particles at room temperature. (author)

Thermoelectric Properties of High-Doped Silicon from Room Temperature to 900 K

Science.gov (United States)

Stranz, A.; Kähler, J.; Waag, A.; Peiner, E.

2013-07-01

Silicon is investigated as a low-cost, Earth-abundant thermoelectric material for high-temperature applications up to 900 K. For the calculation of module design the Seebeck coefficient and the electrical as well as thermal properties of silicon in the high-temperature range are of great importance. In this study, we evaluate the thermoelectric properties of low-, medium-, and high-doped silicon from room temperature to 900 K. In so doing, the Seebeck coefficient, the electrical and thermal conductivities, as well as the resulting figure of merit ZT of silicon are determined.

Spall behaviors of high purity copper under sweeping detonation

Energy Technology Data Exchange (ETDEWEB)

Yang, Yang, E-mail: yangyanggroup@163.com [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900 (China); National Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081 (China); Key Laboratory of Nonferrous Metals Material Science and Engineering of Ministry of Education, Central South University, Changsha 410083 (China); Zhi-qiang, Peng; Xing-zhi, Chen [School of Material Science and Engineering, Central South University, Changsha 410083 (China); Key Laboratory of Nonferrous Metals Material Science and Engineering of Ministry of Education, Central South University, Changsha 410083 (China); Zhao-liang, Guo; Tie-gang, Tang; Hai-bo, Hu [Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang 621900 (China); Qing-ming, Zhang [National Key Laboratory of Explosion Science and Technology, Beijing Institute of Technology, Beijing 100081 (China)

2016-01-10

Suites of sweeping detonation experiments were conducted to assess the spall behavior of high purity copper samples with different heat treatment histories. Incipient spall samples were obtained at different sweeping detonation condition. Metallographic and Electron Backscattered Diffraction (EBSD) analyses were performed on the soft-recovered samples. The effects of grain boundaries, grain size, crystal orientation and loading direction on the spall behaviors were discussed. Spall plane branching was found in the main spall plane of the damage samples. For similar microstructure, the area of voids increase with the increase of shock stress, and the coalescence of voids also become more obvious. Results from EBSD analysis show that the grain sizes were decreased and the grains were elongated along the direction of the plate width. Triple junctions composed of two or more general high angle boundaries are the preferred locations for intergranular damage. Voids prefer to nucleate in the grain boundaries composed of grain with high Taylor Factor (TF) than other grains. The damage areas in the grains with high TF are more severe. Boundaries close to perpendicular to the loading direction are more susceptible to void nucleation than the boundaries close to parallel to the loading direction, but the difference of voids nucleated in these two boundaries is less significant than the results obtained by plate impact experiment. It would be caused by the obliquity between the shock loading direction and the plate normal.

A simple dissolved metals mixing method to produce high-purity MgTiO3 nanocrystals

International Nuclear Information System (INIS)

Pratapa, Suminar; Baqiya, Malik A.; Istianah,; Lestari, Rina; Angela, Riyan

2014-01-01

A simple dissolved metals mixing method has been effectively used to produce high-purity MgTiO 3 (MT) nanocrystals. The method involves the mixing of independently dissolved magnesium and titanium metal powders in hydrochloric acid followed by calcination. The phase purity and nanocrystallinity were determined by making use of laboratory x-ray diffraction data, to which Rietveld-based analyses were performed. Results showed that the method yielded only one type magnesium titanate powders, i.e. MgTiO 3 , with no Mg 2 TiO 4 or MgTi 2 O 5 phases. The presence of residual rutile or periclase was controlled by adding excessive Mg up to 5% (mol) in the stoichiometric mixing. The method also resulted in MT nanocrystals with estimated average crystallite size of 76±2 nm after calcination at 600°C and 150±4 nm (at 800°C). A transmission electron micrograph confirmed the formation of the nanocrystallites

Silicon nanowire structures as high-sensitive pH-sensors

International Nuclear Information System (INIS)

Belostotskaya, S O; Chuyko, O V; Kuznetsov, A E; Kuznetsov, E V; Rybachek, E N

2012-01-01

Sensitive elements for pH-sensors created on silicon nanostructures were researched. Silicon nanostructures have been used as ion-sensitive field effect transistor (ISFET) for the measurement of solution pH. Silicon nanostructures have been fabricated by 'top-down' approach and have been studied as pH sensitive elements. Nanowires have the higher sensitivity. It was shown, that sensitive element, which is made of 'one-dimensional' silicon nanostructure have bigger pH-sensitivity as compared with 'two-dimensional' structure. Integrated element formed from two p- and n-type nanowire ISFET ('inverter') can be used as high sensitivity sensor for local relative change [H+] concentration in very small volume.

Gain limits of a Thick GEM in high-purity Ne, Ar and Xe

CERN Document Server

Miyamoto, J; Peskov, V

2010-01-01

The dependence of the avalanche charge gain in Thick Gas Electron Multipliers (THGEM) on the purity of Ne, Ar and Xe filling gases was investigated. The gain, measured with alpha-particles in standard conditions (atmospheric pressure, room temperature), was found to considerably drop in gases purified by non-evaporable getters. On the other hand, small N2 admixtures to noble gases resulted in high reachable gains. The results are of general relevance in the operation of gas-avalanche detectors in noble gases, particularly that of two-phase cryogenic detectors for rare events.

Synthesis of high-purity Li{sub 8}ZrO{sub 6} powder by solid state reaction under hydrogen atmosphere

Energy Technology Data Exchange (ETDEWEB)

Shin-mura, Kiyoto; Otani, Yu; Ogawa, Seiya [Course of Mechanical Engineering, Graduate School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Niwa, Eiki; Hashimoto, Takuya [Department of Physics, College of Humanities and Sciences, Nihon University, 3-8-1 Sakurajousui, Setagaya-ku, Tokyo 156-8550 (Japan); Hoshino, Tsuyoshi [Breeding Functional Materials Development Group, Department of Blanket Systems Research, Rokkasho Fusion Institute, Sector of Fusion Research and Development, Japan Atomic Energy Agency, 2-166 Obuchi, Omotedate, Rokkasho-mura, Kamikita-gun, Aomori 039-3212 (Japan); Sasaki, Kazuya, E-mail: k_sasaki@tokai-u.ac.jp [Course of Mechanical Engineering, Graduate School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan); Department of Prime Mover Engineering, School of Engineering, Tokai University, 4-1-1 Kitakaname, Hiratsuka, Kanagawa 259-1292 (Japan)

2016-11-01

Highlights: • A fine pure Li{sub 8}ZrO{sub 6} powder was synthesized by using Li{sub 2}CO{sub 3} and ZrO{sub 2} via a solid state reaction. • Influences on the purity of product powder, lattice defect, and crystal orientation were revealed. • The suitable synthesis conditions of the fine and high purity Li{sub 8}ZrO{sub 6} powder were found. • The reaction process of the synthesis of Li{sub 8}ZrO{sub 6} was estimated. - Abstract: Li{sub 8}ZrO{sub 6} contains a large amount of Li and has a significant potential as a tritium breeder. However, few syntheses of fine-grain, high-purity Li{sub 8}ZrO{sub 6} powder have been reported. In this study, a high-purity powder of Li{sub 8}ZrO{sub 6} was synthesized by solid state reaction under hydrogen atmosphere combined with an effective lithium source and a suitable initial Li:Zr molar ratio. Mixed powders of Li{sub 2}CO{sub 3} and ZrO{sub 2} were fired at around 630 °C in H{sub 2} for several hours and several firing cycles. The low firing temperature inhibited the vaporization of Li during the heating, so that excessive amounts of Li were not needed for the synthesis, and the Li:Zr ratio in the starting material was 10:1 (mol:mol). In this synthesis, Li{sub 2}O was generated via the decomposition of Li{sub 2}CO{sub 3} during firing in H{sub 2}, and reacted with ZrO{sub 2} to form Li{sub 6}Zr{sub 2}O{sub 7}, which reacted with itself to form Li{sub 8}ZrO{sub 6}.

High-pressure torsion of aluminum with ultrahigh purity (99.9999%) and occurrence of inverse Hall-Petch relationship

Energy Technology Data Exchange (ETDEWEB)

Ito, Yuki [Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395 (Japan); Edalati, Kaveh, E-mail: Kaveh.edalati@zaiko6.zaiko.kyushu-u.ac.jp [Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395 (Japan); WPI, International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395 (Japan); Horita, Zenji [Department of Materials Science and Engineering, Kyushu University, Fukuoka 819-0395 (Japan); WPI, International Institute for Carbon-Neutral Energy Research (WPI-I2CNER), Kyushu University, Fukuoka 819-0395 (Japan)

2017-01-02

Severe plastic deformation through the high-pressure torsion (HPT) method was applied to pure aluminum with a wide range of purity levels such as 99% (A1100), 99.5% (A1050), 99.99% (4NAl), 99.999% (5NAl) and 99.9999% (6NAl). The hardness of 6NAl decreased with straining and saturated to a level below the hardness level of the annealed sample. This softening behavior, which was similar to the behavior of metals with low melting temperatures such as indium, tin, lead and zinc, was not observed in 5NAl or less pure Al. It was found that the grain-size dependence of hardness became less significant with increasing the purity level, while the HPT-processed 6NAl followed an inverse Hall-Petch relationship. In 6NAl with large grain sizes, dislocations accumulated in the grains in the form of dislocation cells and enhanced the hardness, but when the grain size was small, the dislocations moved fast and disappeared in high-angle grain boundaries.

Synthesis of high purity tungsten nanoparticles from tungsten heavy alloy scrap by selective precipitation and reduction route

International Nuclear Information System (INIS)

Kamal, S.S. Kalyan; Sahoo, P.K.; Vimala, J.; Shanker, B.; Ghosal, P.; Durai, L.

2016-01-01

In this paper we report synthesis of tungsten nanoparticles of high purity >99.7 wt% from heavy alloy scrap using a novel chemical route of selective precipitation and reduction. The effect of Poly(vinylpyrrolidone) polymer on controlling the particle size is established through FTIR spectra and corroborated with TEM images, wherein the average size decreased form 210 to 45 nm with increasing PVP content from zero to 2 g under different experimental conditions. This process is economical as raw material is a scrap and the efficiency of the reaction is >95%. - Highlights: • Tungsten nanoparticles were synthesized from tungsten heavy alloy scrap. • A novel chemical route of precipitation and reduction with Poly(vinylpyrrolidone) polymer as stabilizer is reported. • The average size decreased form 210 to 45 nm with increasing PVP content from zero to 2 g. • High pure tungsten nanoparticles of >99.7% purity could be synthesized using this route. • Efficiency of the reaction is >95%.

Amorphous germanium as an electron or hole blocking contact on high-purity germanium detectors

International Nuclear Information System (INIS)

Hansen, W.L.; Haller, E.E.

1976-10-01

Experiments were performed in an attempt to make thin n + contacts on high-purity germanium by the solid phase/sup 1)/ epitaxial regrowth of arsenic doped amorphous germanium. After cleaning the crystal surface with argon sputtering and trying many combinations of layers, it was not found possible to induce recrystallization below 400 0 C. However, it was found that simple thermally evaporated amorphous Ge made fairly good electron or hole blocking contacts. Excellent spectrometers have been made with amorphous Ge replacing the n + contact. As presently produced, the amorphous Ge contact diodes show a large variation in high-voltage leakage current

High frequency guided wave propagation in monocrystalline silicon wafers

OpenAIRE

Pizzolato, M.; Masserey, B.; Robyr, J. L.; Fromme, P.

2017-01-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full...

Damage process of high purity tungsten coatings by hydrogen beam heat loads

International Nuclear Information System (INIS)

Tamura, S.; Tokunaga, K.; Yoshida, N.; Taniguchi, M.; Ezato, K.; Sato, K.; Suzuki, S.; Akiba, M.; Tsunekawa, Y.; Okumiya, M.

2005-01-01

To investigate the synergistic effects of heat load and hydrogen irradiation, cyclic heat load tests with a hydrogen beam and a comparable electron beam were performed for high purity CVD-tungsten coatings. Surface modification was examined as a function of the peak temperature by changing the heat flux. Scanning Electron Microscopy analysis showed that the surface damage caused by the hydrogen beam was more severe than that by the electron beam. In the hydrogen beam case, cracking at the surface occurred at all peak temperatures examined from 300 deg. C to 1600 deg. C. These results indicate that the injected hydrogen induces embrittlement for the CVD-tungsten coating

Silicon detectors for x and gamma-ray with high radiation resistance

International Nuclear Information System (INIS)

Cimpoca, Valerica; Popescu, Ion V.; Ruscu, Radu

2001-01-01

Silicon detectors are widely used in X and gamma-ray spectroscopy for direct detection or coupled with scintillators in high energy nuclear physics (modern collider experiments are representative), medicine and industrial applications. In X and gamma dosimetry, a low detection limit (under 6 KeV) with silicon detectors becomes available. Work at the room temperature is now possible due to the silicon processing evolution, which assures low reverse current and high life time of carriers. For several years, modern semiconductor detectors have been the primary choice for the measurement of nuclear radiation in various scientific fields. Nowadays the recently developed high resolution silicon detectors found their way in medical applications. As a consequence many efforts have been devoted to the development of high sensitivity and radiation hardened X and gamma-ray detectors for the energy range of 5 - 150 keV. The paper presents some results concerning the technology and behaviour of X and Gamma ray silicon detectors used in physics research, industrial and medical radiography. The electrical characteristics of these detectors, their modification after exposure to radiation and the results of spectroscopic X and Gamma-ray measurements are discussed. The results indicated that the proposed detectors enables the development of reliable silicon detectors to be used in controlling the low and high radiation levels encountered in a lot of application

High temperature mechanical performance of a hot isostatically pressed silicon nitride

Energy Technology Data Exchange (ETDEWEB)

Wereszczak, A.A.; Ferber, M.K.; Jenkins, M.G.; Lin, C.K.J. [and others

1996-01-01

Silicon nitride ceramics are an attractive material of choice for designers and manufacturers of advanced gas turbine engine components for many reasons. These materials typically have potentially high temperatures of usefulness (up to 1400{degrees}C), are chemically inert, have a relatively low specific gravity (important for inertial effects), and are good thermal conductors (i.e., resistant to thermal shock). In order for manufacturers to take advantage of these inherent properties of silicon nitride, the high-temperature mechanical performance of the material must first be characterized. The mechanical response of silicon nitride to static, dynamic, and cyclic conditions at elevated temperatures, along with reliable and representative data, is critical information that gas turbine engine designers and manufacturers require for the confident insertion of silicon nitride components into gas turbine engines. This final report describes the high-temperature mechanical characterization and analyses that were conducted on a candidate structural silicon nitride ceramic. The high-temperature strength, static fatigue (creep rupture), and dynamic and cyclic fatigue performance were characterized. The efforts put forth were part of Work Breakdown Structure Subelement 3.2.1, {open_quotes}Rotor Data Base Generation.{close_quotes} PY6 is comparable to other hot isostatically pressed (HIPed) silicon nitrides currently being considered for advanced gas turbine engine applications.

Purity Evaluation of Single-Walled Carbon Nanotubes Using Thermogravimetric Analysis

International Nuclear Information System (INIS)

Goak, Jeung Choon; Kim, Tae Yang; Jung, Jongwan; Seo, Young-Soo; Lee, Naesung; Sok, Junghyun

2013-01-01

This study evaluated the purity of single-walled carbon nanotubes (SWCNTs) in the arc-synthesized SWCNT samples by using thermogravimetric analysis (TGA). The as-produced SWCNT samples were heat-treated in air for 20 h at 275-475°C and characterized by scanning and transmission electron microscopes and TGA to establish oxidation temperature ranges of SWCNTs and carbonaceous impurities comprising the samples. Based on these oxidation temperature ranges, derivative thermogravimetric curves were deconvoluted, and differentiated peaks were assigned to SWCNTs and carbonaceous impurities. The compositions and the SWCNT purities of the samples were obtained simply by calculating the areal ratios under the deconvoluted curves. TGA studies on purity evaluation and thermal stabilities of SWCNTs and carbonaceous impurities are likely to provide us with a simple route of thermal oxidation purification to acquire high-purity SWCNT samples.

Synthesis of silicon carbide by carbothermal reduction of silica

International Nuclear Information System (INIS)

Abel, Joao Luis

2009-01-01

The production of silicon carbide (SiC) in an industrial scale still by carbothermal reduction of silica. This study aims to identify, in a comparative way, among the common reducers like petroleum coke, carbon black, charcoal and graphite the carbothermal reduction of silica from the peat. It is shown, that the peat, also occurs in nature together with high purity silica sand deposits, where the proximity of raw materials and their quality are key elements that determine the type, purity and cost of production of SiC. Tests were running from samples produced in the electric resistance furnace with controlled atmosphere at temperatures of 1550 degree C, 1600 degree C and 1650 degree C, both the precursors and products of reaction of carbothermal reduction were characterized by applying techniques of X-ray diffraction, scanning electron microscopy (SEM) and Energy-Dispersive X-ray analysis Spectroscopy (EDS). The results showed the formation of SiC for all common reducers, as well as for peat, but it was not possible to realize clearly the difference between them, being necessary, specific tests. (author)

Functionalization of 2D macroporous silicon under the high-pressure oxidation

Science.gov (United States)

Karachevtseva, L.; Kartel, M.; Kladko, V.; Gudymenko, O.; Bo, Wang; Bratus, V.; Lytvynenko, O.; Onyshchenko, V.; Stronska, O.

2018-03-01

Addition functionalization after high-pressure oxidation of 2D macroporous silicon structures is evaluated. X-ray diffractometry indicates formation of orthorhombic SiO2 phase on macroporous silicon at oxide thickness of 800-1200 nm due to cylindrical symmetry of macropores and high thermal expansion coefficient of SiO2. Pb center concentration grows with the splitting energy of LO- and TO-phonons and SiO2 thickness in oxidized macroporous silicon structures. This increase EPR signal amplitude and GHz radiation absorption and is promising for development of high-frequency devices and electronically controlled elements.

Effect of temperature on corrosion of steels in high purity water

International Nuclear Information System (INIS)

Honda, Takashi; Kashimura, Eiji; Ohashi, Kenya; Furutani, Yasumasa; Ohsumi, Katsumi; Aizawa, Motohiro; Matsubayashi, Hideo.

1987-01-01

Effect of temperature on corrosion behavior of steels was evaluated in the range of 150 - 300 deg C in high purity water containing about 200 ppb oxygen. The exposure tests were carried out in actual and simulated reactor water of BWR plants. Through X-ray diffractometry, SIMS, XPS and chemical analyses, it was clarified that the chemical composition and morphology of oxide films formed on austenitic stainless steel changed above about 250 deg C. Chromium dissolved easily through corrosion above this temperature, and the oxide films primarily consisted of spinel type oxides containing high concentration of nickel. Further, as the protectivety of oxide films increased with temperature, the corrosion rate had a peak around 250 deg C after a long exposure period. A major phase of oxide films on carbon steel was magnetite in the whole temperature range. However, as the oxide films formed at high temperatures had very compact structures, the effect of temperature on the corrosion rate was similar to that observed on stainless steel. (author)

Effects of cyclic tensile loading on stress corrosion cracking susceptibility for sensitized Type 304 stainless steel in 290 C high purity water

International Nuclear Information System (INIS)

Takaku, H.; Tokiwai, M.; Hirano, H.

1979-01-01

The effects of load waveform on intergranular stress corrosion cracking (IGSCC) susceptibility have been examined for sensitized Type 304 stainless steels in a 290 C high purity water loop. Concerning the strain rate in the trapezoidal stress waveform, it was found that IGSCC susceptibility was higher for smaller values of the strain rate. It was also shown that IGSCC susceptibility became higher when the holding time at the upper stress was prolonged, and when the upper stress was high. The occurrence of IGSCC for sensitized Type 304 stainless steel became easy due to the application of cyclic tensile stress in 290 C high purity water

High-purity fatty acid methyl ester production from canola, soybean, palm, and yellow grease lipids by means of a membrane reactor

International Nuclear Information System (INIS)

Cao Peigang; Dube, Marc A.; Tremblay, Andre Y.

2008-01-01

High-purity fatty acid methyl ester (FAME) was produced from different lipids, such as soybean oil, canola oil, a hydrogenated palm oil/palm oil blend, yellow grease, and brown grease, combined with methanol using a continuous membrane reactor. The membrane reactor combines reaction and separation in a single unit, provides continuous mixing of raw materials, and maintains a high molar ratio of methanol to lipid in the reaction loop while maintaining two phases during the reaction. It was demonstrated that the membrane reactor can be operated using a very broad range of feedstocks at highly similar operating conditions to produce FAME. The total glycerine and free glycerine contents of the FAME produced were below the ASTM D6751 standard after a single reaction step. Under essentially the same reaction conditions, a conventional batch reaction was not able to achieve the same degree of FAME purity. The effect of the fatty acid composition of the lipid feedstocks on the FAME purity was also shown. It was demonstrated that, due to the fatty acid composition, FAME from virgin soybean oil and virgin canola oil was produced in the membrane reactor within ASTM specifications even without a water washing step

Effect of Ion Beam Irradiation on Silicon Carbide with Different Microstructures

International Nuclear Information System (INIS)

Park, Kyeong Hwan; Park, Ji Yeon; Kim, Weon Ju; Jung, Choong Hwan; Ryu, Woo Seog

2006-01-01

SiC and SiC/SiC composites are one of promising candidates for structural materials of the next generation energy systems such as the gas-cooled reactors and fusion reactors. This anticipation yields many material issues, and radiation effects of silicon carbide are recognized as an important research subject. Silicon carbide has diverse crystal structures (called polytypes), such as α-SiC (hexagonal structure), β-SiC (cubic structure) and amorphous SiC. Among these polytypes, β-SiC has been studied as matrix material in SiC/SiC composites. Near-stoichiometric β-SiC with high crystallinity and purity is considered as suitable material in the next generation energy system and matrix material in SiC/SiC composites because of its excellent radiation resistance. Highly pure and crystalline β-SiC and SiC/SiC composites could be obtained by the chemical vapor deposition (CVD) and Infiltration (CVI) process using a gas mixture of methyltrichlorosilane (CH 3 SiCl 3 , MTS) and purified H 2 . SiC produced by the CVD method has different grain size and microstructural morphology depended on the process conditions such as temperature, pressure and the input gas ratio. In this work, irradiation effects of silicon carbide were investigated using ion beam irradiation with emphasis on the influence of grain size and grain boundary. MeV ion irradiation at low temperature makes amorphous phase in silicon carbide. The microstructures and mechanical property changes of silicon carbide with different structures were analyzed after ion beam irradiation

Broadband infrared photoluminescence in silicon nanowires with high density stacking faults.

Science.gov (United States)

Li, Yang; Liu, Zhihong; Lu, Xiaoxiang; Su, Zhihua; Wang, Yanan; Liu, Rui; Wang, Dunwei; Jian, Jie; Lee, Joon Hwan; Wang, Haiyan; Yu, Qingkai; Bao, Jiming

2015-02-07

Making silicon an efficient light-emitting material is an important goal of silicon photonics. Here we report the observation of broadband sub-bandgap photoluminescence in silicon nanowires with a high density of stacking faults. The photoluminescence becomes stronger and exhibits a blue shift under higher laser powers. The super-linear dependence on excitation intensity indicates a strong competition between radiative and defect-related non-radiative channels, and the spectral blue shift is ascribed to the band filling effect in the heterostructures of wurtzite silicon and cubic silicon created by stacking faults.

Synthesis of High Purity Sinterable Silicon Carbide Powder

Science.gov (United States)

1989-11-01

10 G-500 TORCH 50 kW (Max) : kW (Derated) BTU/HR (Derated) RE, E-500 »CTOR/AFTERCOOLEP B70" .0X 72" T/T ISO M BTU/HR Copper B-500 DUST...Fourth and Canal Streets Post Office Box 27003 Richmond, VA 23219 137. Stephen C. Danforth Rutgers University Bowser Road Post Office Box 909

Fabrication and Characterisation of Silicon Waveguides for High-Speed Optical Signal Processing

DEFF Research Database (Denmark)

Jensen, Asger Sellerup

This Ph.D. thesis treats various aspects of silicon photonics. From the limitations of silicon as a linear and nonlinear waveguide medium to its synergy with other waveguide materials. Various methods for reducing sidewall roughness and line edge roughness of silicon waveguides are attempted...... was too high for any practical applications. It is speculated that the attempt at creating a material with low density of dangling bonds was unsuccessful. Nevertheless, linear losses of 2.4dB/cm at 1550nm wavelength in the silicon waveguides remained sufficiently low that high speed nonlinear optical...

Radiation hardened high efficiency silicon space solar cell

International Nuclear Information System (INIS)

Garboushian, V.; Yoon, S.; Turner, J.

1993-01-01

A silicon solar cell with AMO 19% Beginning of Life (BOL) efficiency is reported. The cell has demonstrated equal or better radiation resistance when compared to conventional silicon space solar cells. Conventional silicon space solar cell performance is generally ∼ 14% at BOL. The Radiation Hardened High Efficiency Silicon (RHHES) cell is thinned for high specific power (watts/kilogram). The RHHES space cell provides compatibility with automatic surface mounting technology. The cells can be easily combined to provide desired power levels and voltages. The RHHES space cell is more resistant to mechanical damage due to micrometeorites. Micro-meteorites which impinge upon conventional cells can crack the cell which, in turn, may cause string failure. The RHHES, operating in the same environment, can continue to function with a similar crack. The RHHES cell allows for very efficient thermal management which is essential for space cells generating higher specific power levels. The cell eliminates the need for electrical insulation layers which would otherwise increase the thermal resistance for conventional space panels. The RHHES cell can be applied to a space concentrator panel system without abandoning any of the attributes discussed. The power handling capability of the RHHES cell is approximately five times more than conventional space concentrator solar cells

Metallurgy of high-silicon steel parts produced using Selective Laser Melting

International Nuclear Information System (INIS)

Garibaldi, Michele; Ashcroft, Ian; Simonelli, Marco; Hague, Richard

2016-01-01

The metallurgy of high-silicon steel (6.9%wt.Si) processed using Selective Laser Melting (SLM) is presented for the first time in this study. High-silicon steel has great potential as a soft magnetic alloy, but its employment has been limited due to its poor workability. The effect of SLM-processing on the metallurgy of the alloy is investigated in this work using microscopy, X-Ray Diffraction (XRD) and Electron Backscatter Diffraction (EBSD). XRD analysis suggests that the SLM high-silicon steel is a single ferritic phase (solid solution), with no sign of phase ordering. This is expected to have beneficial effects on the material properties, since ordering has been shown to make silicon steels more brittle and electrically conductive. For near-fully dense samples, columnar grains with a high aspect ratio and oriented along the build direction are found. Most importantly, a <001> fibre-texture along the build direction can be changed into a cube-texture when the qualitative shape of the melt-pool is altered (from shallow to deep) by increasing the energy input of the scanning laser. This feature could potentially open the path to the manufacture of three-dimensional grain-oriented high-silicon steels for electromechanical applications.

Amorphous silicon as high index photonic material

Science.gov (United States)

Lipka, T.; Harke, A.; Horn, O.; Amthor, J.; Müller, J.

2009-05-01

Silicon-on-Insulator (SOI) photonics has become an attractive research topic within the area of integrated optics. This paper aims to fabricate SOI-structures for optical communication applications with lower costs compared to standard fabrication processes as well as to provide a higher flexibility with respect to waveguide and substrate material choice. Amorphous silicon is deposited on thermal oxidized silicon wafers with plasma-enhanced chemical vapor deposition (PECVD). The material is optimized in terms of optical light transmission and refractive index. Different a-Si:H waveguides with low propagation losses are presented. The waveguides were processed with CMOS-compatible fabrication technologies and standard DUV-lithography enabling high volume production. To overcome the large mode-field diameter mismatch between incoupling fiber and sub-μm waveguides three dimensional, amorphous silicon tapers were fabricated with a KOH etched shadow mask for patterning. Using ellipsometric and Raman spectroscopic measurements the material properties as refractive index, layer thickness, crystallinity and material composition were analyzed. Rapid thermal annealing (RTA) experiments of amorphous thin films and rib waveguides were performed aiming to tune the refractive index of the deposited a-Si:H waveguide core layer after deposition.

Comparison of Response Characteristics of High-Purity Germanium Detectors using Analog Versus Digital Processing

International Nuclear Information System (INIS)

Luke, S J; Raschke, K

2004-01-01

In this article we will discuss some of the results of the response characteristics of High Purity germanium detectors using analog versus digital processing of the signals that are outputted from the detector. The discussion will focus on whether or not there is a significant difference in the response of the detector with digital electronics that it limits the ability of the detection system to get reasonable gamma ray spectrometric results. Particularly, whether or not the performance of the analysis code Pu600 is compromised

Fabrication of High-Frequency pMUT Arrays on Silicon Substrates

DEFF Research Database (Denmark)

Pedersen, Thomas; Zawada, Tomasz; Hansen, Karsten

2010-01-01

A novel technique based on silicon micromachining for fabrication of linear arrays of high-frequency piezoelectric micromachined ultrasound transducers (pMUT) is presented. Piezoelectric elements are formed by deposition of lead zirconia titanate into etched features of a silicon substrate...

Photon-phonon laser on crystalline silicon: a feasibility study

International Nuclear Information System (INIS)

Zadernovsky, A A

2015-01-01

We discuss a feasibility of photon-phonon laser action in bulk silicon with electron population inversion. It is well known, that only direct gap semiconductors are used as an active medium in optical lasers. In indirect gap semiconductors, such as crystalline silicon, the near-to-gap radiative electron transitions must be assisted by emission or absorption of phonons to conserve the momentum. The rate of such two-quantum transitions is much less than in direct gap semiconductors, where the similar radiative transitions are single-quantum. As a result, the quantum efficiency of luminescence in silicon is too small to get it as a laser material. Numerous proposals to overcome this problem are aimed at increasing the rate of radiative recombination. We suggest enhancing the quantum efficiency of luminescence in silicon by stimulating the photon part of the two-quantum transitions by light from an appropriate external laser source. This allows us to obtain initially an external-source-assisted lasing in silicon and then a true photon-phonon lasing without any external source of radiation. Performed analysis revealed a number of requirements to the silicon laser medium (temperature, purity and perfection of crystals) and to the intensity of stimulating radiation. We discuss different mechanisms that may hinder the implementation of photon-phonon lasing in silicon

The method for production of high purity carrier free ortophosphoric acid labeled with isotopes Phosphorus-32 and Phosphorus-33

International Nuclear Information System (INIS)

Abdukayumov, M.N.; Abdusalyamov, A.N.; Chistyakov, P.G.; Yuldashev, B.S.

2001-01-01

Extensive application for various radioactive isotopes was found in an extremity of the 20-Th century in a science and production. Labeled compounds are used with growing effectiveness in a molecular biology, gene engineering, medicine and other areas. Phosphorus-32 and Phosphorus-33 isotopes as a different labeled compounds that are used mainly in molecular biology are produced at the Radiopreparat enterprise of the Institute of Nuclear Physics of Academy of Sciences of Uzbekistan Republic. The quality of labeled preparations is very high. The specifications for above mentioned preparations corresponds to demands most of customers in different countries. P-32 or P-33 labeled orthophosphoric acid has high radiochemical purity (more than 99 %) and specific radioactivity close to theoretical. Orthophosphoric acid prepared by the described above method has radiochemical purity about 95 % and output of the target product 99%

Porous silicon structures with high surface area/specific pore size

Science.gov (United States)

Northrup, M.A.; Yu, C.M.; Raley, N.F.

1999-03-16

Fabrication and use of porous silicon structures to increase surface area of heated reaction chambers, electrophoresis devices, and thermopneumatic sensor-actuators, chemical preconcentrates, and filtering or control flow devices. In particular, such high surface area or specific pore size porous silicon structures will be useful in significantly augmenting the adsorption, vaporization, desorption, condensation and flow of liquids and gases in applications that use such processes on a miniature scale. Examples that will benefit from a high surface area, porous silicon structure include sample preconcentrators that are designed to adsorb and subsequently desorb specific chemical species from a sample background; chemical reaction chambers with enhanced surface reaction rates; and sensor-actuator chamber devices with increased pressure for thermopneumatic actuation of integrated membranes. Examples that benefit from specific pore sized porous silicon are chemical/biological filters and thermally-activated flow devices with active or adjacent surfaces such as electrodes or heaters. 9 figs.

The rapid synthesis of high purity [{sup 18}F]butyrophenone neuroleptics from nitro precursors for PET study

Energy Technology Data Exchange (ETDEWEB)

Hashizume, Kazunari; Hashimoto, Naoto; Kato, Hiroo; Cork, D G; Miyake, Yoshihiro [National Cardiovascular Center, Suita, Osaka (Japan)

1995-04-01

We have completed rapid syntheses of [{sup 18}F]butyrophenone neuroleptics ([{sup 18}F]haloperidol and [{sup 18}F]spiperone) from their nitro precursors in high radiochemical yields (up to 21%) by combining a one-step nitro-fluoro exchange reaction and a novel high performance liquid chromatography (HPLC) separation method. The synthesis time was ca. 95 min and both the radiochemical and chemical purities of the labeled products were over 99%. (author).

Crystal growth for high-efficiency silicon solar cells workshop: Summary

Science.gov (United States)

Dumas, K. A.

1985-01-01

The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

Synthesis of high-quality mesoporous silicon particles for enhanced lithium storage performance

Energy Technology Data Exchange (ETDEWEB)

Wang, Chundong, E-mail: apcdwang@hust.edu.cn [School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074 (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Ren, Jianguo [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Chen, Hao [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Zhang, Yi [School of Chemical Engineering and Pharmacy, Wuhan Institute of Technology, Wuhan, 430073 (China); Ostrikov, Kostya [School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane 4000, QLD (Australia); Manufacturing Flagship, CSIRO, P. O. Box 218, Lindfield, NSW 2070 (Australia); Zhang, Wenjun [Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China); Li, Yi, E-mail: liyi@suda.edu.cn [Department of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou (China); Center of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong SAR (China)

2016-04-15

Silicon has been considered as one of the most promising anode materials for high-capacity lithium-ion batteries (LIBs) due to its ultrahigh theoretical capacity, abundance, and environmentally benign nature. Nonetheless, the severe break during the prolonged cycling results in poor electrochemical performance, which hinders its practical application. Herein, we report the synthesis of novel mesoporous silicon particles with a facile template method by using a magnesiothermic reduction for LIBs. The obtained silicon nanoparticles are highly porous with densely porous cavities (20–40 nm) on the wall, of which it presents good crystallization. Electrochemical measurements showed that the mesoporous silicon nanoparticles delivered a high reversible specific capacity of 910 mA h g{sup −1} at a high current density of 1200 mA g{sup −1} over 50 cycles. The specific capacity at such high current density is still over twofold than that of commercial graphite anode, suggesting that the nanoporous Si architectures is suitable for high-performance Si-based anodes for lithium ion batteries in terms of capacity, cycle life, and rate capacity. - Highlights: • Silica nanotubes were prepared with a facile template method. • Novel mesoporous silicon particles were obtained by magnesiothermic reduction. • High-Performance LIBs were achieved by using mesoporous Si particle Electrodes.

Efficiency correction for disk sources using coaxial High-Purity Ge detectors

International Nuclear Information System (INIS)

Chatani, Hiroshi.

1993-03-01

Efficiency correction factors for disk sources were determined by making use of closed-ended coaxial High-Purity Ge (HPGe) detectors, their relative efficiencies for a 3' 'x3' ' NaI(Tl) with the 1.3 MeV γ-rays were 30 % and 10 %, respectively. Parameters for the correction by mapping method were obtained systematically, using several monoenergetic (i.e. no coincidence summing loses) γ-ray sources produced by irradiation in the Kyoto University Reactor (KUR) core. These were found out that (1) the systematics of the Gaussian fitting parameters, which were calculated using the relative efficiency distributions of HPGe, to the γ-ray energies are recognized, (2) the efficiency distributions deviate from the Gaussian distributions outside of the radii of HPGe. (3) mapping method is a practical use in satisfactory accuracy, as the results in comparison with the disk source measurements. (author)

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2005-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

High-rate silicon nitride deposition for photovoltaics : from fundamentals to industrial application

NARCIS (Netherlands)

Kessels, W.M.M.; Oever, van den P.J.; Bosch, R.C.M.; Bijker, M.D.; Evers, M.F.J.; Schram, D.C.; Sanden, van de M.C.M.

2004-01-01

The development of a novel plasma technique for high rate (> 1 nm/s) silicon nitride deposition for multifunctional antireflection coatings on crystalline silicon solar cells is described. The research has involved the analysis of the structural and optical properties of the silicon nitride films as

All electrochemical fabrication of a bilayer membrane composed of nanotubular photocatalyst and palladium toward high-purity hydrogen production

Energy Technology Data Exchange (ETDEWEB)

Hattori, Masashi [Institute for Materials Chemistry and Engineering, Kyushu University, Kasuga 816-8580 (Japan); Noda, Kei, E-mail: nodakei@elec.keio.ac.jp [Department of Electronics and Electrical Engineering, Keio University, Hiyoshi, Yokohama 223-8522 (Japan)

2015-12-01

Graphical abstract: - Highlights: • A bilayer membrane composed of TiO{sub 2} nanotube array and palladium was fabricated. • The TiO{sub 2}/Pd bilayer membrane was prepared with an all-electrochemical process. • The membrane consists of pure Pd and anatase TiO{sub 2} nanotubes with no alloy formation. • Photocatalytic H{sub 2} production and concomitant separation were demonstrated. • High-purity H{sub 2} production rate and apparent quantum yield were evaluated. - Abstract: We developed an all-electrochemical technique for fabricating a bilayer structure of a titanium dioxide (TiO{sub 2}) nanotube array (TNA) and a palladium film (TNA/Pd membrane), which works for photocatalytic high-purity hydrogen production. Electroless plating was used for depositing the Pd film on the TNA surface prepared by anodizing a titanium foil. A 3-μm-thick TNA/Pd membrane without any pinholes in a 1.5-cm-diameter area was fabricated by transferring a 1-μm-thick TNA onto an electroless-plated 2-μm-thick Pd film with a mechanical peel-off process. This ultrathin membrane with sufficient mechanical robustness showed photocatalytic H{sub 2} production via methanol reforming under ultraviolet illumination on the TNA side, immediately followed by the purification of the generated H{sub 2} gas through the Pd layer. The hydrogen production rate and the apparent quantum yield for high-purity H{sub 2} production from methanol/water mixture with the TNA/Pd membrane were also examined. This work suggests that palladium electroless plating is more suitable and practical for preparing a well-organized TNA/Pd heterointerface than palladium sputter deposition.

Preparation of high-purity Pr{sup 3+} doped Ge–As–Se–In–I glasses for active mid-infrared optics

Energy Technology Data Exchange (ETDEWEB)

Karaksina, E.V.; Shiryaev, V.S., E-mail: shiryaev@ihps.nnov.ru; Kotereva, T.V.; Velmuzhov, A.P.; Ketkova, L.A.; Snopatin, G.E.

2016-09-15

The multi-stage method for the synthesis of high-purity Ge–As–Se–In–I glasses doped with Pr{sup 3+} ions is developed. It is based on the chemical distillation purification of glass-forming melt and the chemical transport reactions for purification and vacuum loading of indium. The level of purity of glasses, synthesized by this method, is higher in comparison with the traditional direct melting method for glass synthesis. The high-purity Pr{sup 3+}-doped Ge–As–Se–In and Pr{sup 3+}-doped Ge–As–Se–In–I glass samples are prepared; the optical, thermal and luminescent properties are investigated. The purest host glass samples, obtained by the multi-stage purification techniques, contain a low concentration of limiting impurities: hydrogen − ≤0.05 ppm (wt) and oxygen − ≤0.1 ppm (wt), that is, at present, the best result for multi-component chalcogenide glasses for mid-IR active fibers. The samples of Pr{sup 3+}-doped Ge–As–Se–In glass fibers have the minimum optical losses of 0.58 dB/m at the wavelength of 2.72 μm and exhibit an intense broadband luminescence in the spectral range of 3.5–5.5 μm, with a maximum shifted to longer wavelengths as compared with the bulk samples.

Decomposition of silicon carbide at high pressures and temperatures

Energy Technology Data Exchange (ETDEWEB)

Daviau, Kierstin; Lee, Kanani K. M.

2017-11-01

We measure the onset of decomposition of silicon carbide, SiC, to silicon and carbon (e.g., diamond) at high pressures and high temperatures in a laser-heated diamond-anvil cell. We identify decomposition through x-ray diffraction and multiwavelength imaging radiometry coupled with electron microscopy analyses on quenched samples. We find that B3 SiC (also known as 3C or zinc blende SiC) decomposes at high pressures and high temperatures, following a phase boundary with a negative slope. The high-pressure decomposition temperatures measured are considerably lower than those at ambient, with our measurements indicating that SiC begins to decompose at ~ 2000 K at 60 GPa as compared to ~ 2800 K at ambient pressure. Once B3 SiC transitions to the high-pressure B1 (rocksalt) structure, we no longer observe decomposition, despite heating to temperatures in excess of ~ 3200 K. The temperature of decomposition and the nature of the decomposition phase boundary appear to be strongly influenced by the pressure-induced phase transitions to higher-density structures in SiC, silicon, and carbon. The decomposition of SiC at high pressure and temperature has implications for the stability of naturally forming moissanite on Earth and in carbon-rich exoplanets.

Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

Science.gov (United States)

Kapoor, V. J.; Shokrani, M.

1991-01-01

A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

Frictional characteristics of silicon graphite lubricated with water at high pressure and high temperature

International Nuclear Information System (INIS)

Lee, Jae Seon; Kim, Eun Hyun; Park, Jin Seok; Kim, Jong In

2001-01-01

Experimental frictional and wear characteristics of silicon graphite materials is studied in this paper. Those specimens are lubricated with high temperature and highly pressurized water to simulate the same operating condition for the journal bearing and the thrust bearing on the main coolant pump bearing in the newly developing nuclear reactor named SMART(System-integrated Modular Advanced ReacTor). Operating condition of the bearings is realized by the tribometer and the autoclave. Friction coefficient and wear loss are analyzed to choose the best silicon graphite material. Pin on plate test specimens are used and coned disk springs are used to control the applied force on the specimens. Wear loss and wear width are measured by a precision balance and a micrometer. The friction force is measured by the strain gauge which can be used under high temperature and high pressure. Three kinds of silicon graphite materials are examined and compared with each other, and each material shows similar but different results on frictional and wear characteristics

Modelling of hydrogen permeability of membranes for high-purity hydrogen production

Science.gov (United States)

Zaika, Yury V.; Rodchenkova, Natalia I.

2017-11-01

High-purity hydrogen is required for clean energy and a variety of chemical technology processes. Different alloys, which may be well-suited for use in gas-separation plants, were investigated by measuring specific hydrogen permeability. One had to estimate the parameters of diffusion and sorption to numerically model the different scenarios and experimental conditions of the material usage (including extreme ones), and identify the limiting factors. This paper presents a nonlinear mathematical model taking into account the dynamics of sorption-desorption processes and reversible capture of diffusing hydrogen by inhomogeneity of the material’s structure, and also modification of the model when the transport rate is high. The results of numerical modelling allow to obtain information about output data sensitivity with respect to variations of the material’s hydrogen permeability parameters. Furthermore, it is possible to analyze the dynamics of concentrations and fluxes that cannot be measured directly. Experimental data for Ta77Nb23 and V85Ni15 alloys were used to test the model. This work is supported by the Russian Foundation for Basic Research (Project No. 15-01-00744).

Radio frequency and linearity performance of transistors using high-purity semiconducting carbon nanotubes.

Science.gov (United States)

Wang, Chuan; Badmaev, Alexander; Jooyaie, Alborz; Bao, Mingqiang; Wang, Kang L; Galatsis, Kosmas; Zhou, Chongwu

2011-05-24

This paper reports the radio frequency (RF) and linearity performance of transistors using high-purity semiconducting carbon nanotubes. High-density, uniform semiconducting nanotube networks are deposited at wafer scale using our APTES-assisted nanotube deposition technique, and RF transistors with channel lengths down to 500 nm are fabricated. We report on transistors exhibiting a cutoff frequency (f(t)) of 5 GHz and with maximum oscillation frequency (f(max)) of 1.5 GHz. Besides the cutoff frequency, the other important figure of merit for the RF transistors is the device linearity. For the first time, we report carbon nanotube RF transistor linearity metrics up to 1 GHz. Without the use of active probes to provide the high impedance termination, the measurement bandwidth is therefore not limited, and the linearity measurements can be conducted at the frequencies where the transistors are intended to be operating. We conclude that semiconducting nanotube-based transistors are potentially promising building blocks for highly linear RF electronics and circuit applications.

Highly efficient silicon light emitting diode

NARCIS (Netherlands)

Le Minh, P.; Holleman, J.; Wallinga, Hans

2002-01-01

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

Fabrication high-purity Fe nanochains with near theoretical limit value of saturation magnetization of bulk Fe

Energy Technology Data Exchange (ETDEWEB)

Bian, Erkang [Henan University, Key Laboratory for Special Functional Materials of Ministry of Education (China); Xu, Yanling [Henan University, The Audit Department (China); Lou, Shiyun, E-mail: lousy@henu.edu.cn [Henan University, Key Laboratory for Special Functional Materials of Ministry of Education (China); Fu, Yunlong, E-mail: yunlongfu@dns.sxnu.edu.cn [Shanxi Normal University, School of Chemistry and Material Science (China); Zhou, Shaomin, E-mail: smzhou@henu.edu.cn [Henan University, Key Laboratory for Special Functional Materials of Ministry of Education (China)

2016-11-15

High-yield purity chain-like one-dimensional nanostructures consisting of single crystal Fe nanoparticles have been produced by using solution dispersion approach. Room temperature magnetic measurement shows that the as-fabricated Fe nanochains are ferromagnetic with a high saturation magnetization (203 emu/g) whereas the nanoparticles are single magnetic domains, which indicate that the as-synthesized products have superparamagnetism behavior with the saturation magnetization of about 28 emu/g. Maybe this results from the directional alignment of the nanoparticles. The excellent characteristic may have led to the potential applications in spin filtering, high density magnetic recording, and nanosensors.

Silicon carbide production by Self-Propagating High Temperature (SHS) technique

International Nuclear Information System (INIS)

Lima, Eduardo de Souza; Schneider, Pedro Luiz; Mattoso, Irani Guedes; Costa, Carlos Roberto Correia da; Louro, Luis Henrique Leme

1997-01-01

Samples of silicon carbide (SiC) were synthesized from a mixture of silicon and carbon powders, using the Self-Propagating High Temperature Synthesis (SHS) technique. Three mixtures were tried, using silicon particles of the same average size but carbon particles of different average sizes. The method tried is characterized by an ignition temperature of 1450 deg C and the short duration of the synthesis ( 2-3 min). The samples were characterized by X-ray diffraction and scattering electron microscopy. (author)

Sensor locations and noise reduction in high-purity batch distillation control loops

Directory of Open Access Journals (Sweden)

Oisiovici R.M.

2000-01-01

Full Text Available The influence of the sensor locations on the composition control of high-purity batch distillation columns has been investigated. Using concepts of the nonlinear control theory, an input-output linearizing controller was implemented to keep the distillate composition constant at a desired value by varying the reflux ratio. An Extended Kalman Filter was developed to estimate the compositions required in the control algorithm using temperature measurements. In the presence of measurement noise, the control performance depended greatly on the sensor locations. Placing the sensors further from the top stages reduced the detrimental effects of noise but increased the inference error. To achieve accurate composition control, both noise reduction and composition estimate accuracy should be considered in the selection of the sensor locations.

Fluorescent porous silicon biological probes with high quantum efficiency and stability.

Science.gov (United States)

Tu, Chang-Ching; Chou, Ying-Nien; Hung, Hsiang-Chieh; Wu, Jingda; Jiang, Shaoyi; Lin, Lih Y

2014-12-01

We demonstrate porous silicon biological probes as a stable and non-toxic alternative to organic dyes or cadmium-containing quantum dots for imaging and sensing applications. The fluorescent silicon quantum dots which are embedded on the porous silicon surface are passivated with carboxyl-terminated ligands through stable Si-C covalent bonds. The porous silicon bio-probes have shown photoluminescence quantum yield around 50% under near-UV excitation, with high photochemical and thermal stability. The bio-probes can be efficiently conjugated with antibodies, which is confirmed by a standard enzyme-linked immunosorbent assay (ELISA) method.

Crystalline-Amorphous Core−Shell Silicon Nanowires for High Capacity and High Current Battery Electrodes

KAUST Repository

Cui, Li-Feng

2009-01-14

Silicon is an attractive alloy-type anode material for lithium ion batteries because of its highest known capacity (4200 mAh/g). However silicon\\'s large volume change upon lithium insertion and extraction, which causes pulverization and capacity fading, has limited its applications. Designing nanoscale hierarchical structures is a novel approach to address the issues associated with the large volume changes. In this letter, we introduce a core-shell design of silicon nanowires for highpower and long-life lithium battery electrodes. Silicon crystalline- amorphous core-shell nanowires were grown directly on stainless steel current collectors by a simple one-step synthesis. Amorphous Si shells instead of crystalline Si cores can be selected to be electrochemically active due to the difference of their lithiation potentials. Therefore, crystalline Si cores function as a stable mechanical support and an efficient electrical conducting pathway while amorphous shells store Li ions. We demonstrate here that these core-shell nanowires have high charge storage capacity (̃1000 mAh/g, 3 times of carbon) with ̃90% capacity retention over 100 cycles. They also show excellent electrochemical performance at high rate charging and discharging (6.8 A/g, ̃20 times of carbon at 1 h rate). © 2009 American Chemical Society.

Study on high-silicon boron-containing zeolite by thermogravimetric and IR-spectroscopy techniques

International Nuclear Information System (INIS)

Chukin, G.D.; Nefedov, B.K.; Surin, S.A.; Polinina, E.V.; Khusid, B.L.; Sidel'kovskaya, V.G.

1985-01-01

The structure identity of initial Na-forms of boron-containing and aluminosilicate high-silicon zeolites is established by thermogravimetric and IR-spectroscopy methods. The presence of boron in Na-forms of high-silicon zeolites is shown to lead to reduction of structure thermal stability. It is noted that thermal stability of the H-form of both high-silicon boron-containing and boron-free zeolites is practically equal and considerably higher than that of Na-forms

High-Tc superconducting antenna-coupled microbolometer on silicon

Science.gov (United States)

Rice, Joseph P.; Grossman, Erich N.; Borcherdt, L. J.; Rudman, D. A.

1994-05-01

A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Tc superconductor YBa2Cu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 X 10-6 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 microsecond(s) , a responsivity of the 1000 V/W range, and a noise-equivalent power in the 10-12 W/Hz1/2 range at 1000 Hz.

Aluminium. II - A review of deformation properties of high purity aluminium and dilute aluminium alloys.

Science.gov (United States)

Reed, R. P.

1972-01-01

The elastic and plastic deformation behavior of high-purity aluminum and of dilute aluminum alloys is reviewed. Reliable property data, including elastic moduli, elastic coefficients, tensile, creep, fatigue, hardness, and impact are presented. Single crystal tensile results are discussed. Rather comprehensive reference lists, containing publications of the past 20 years, are included for each of the above categories. Defect structures and mechanisms responsible for mechanical behavior are presented. Strengthening techniques (alloys, cold work, irradiation, quenching, composites) and recovery are briefly reviewed.

Analysis of the strain-aging phenomena in high purity niobium: competition between hardening and recovery

International Nuclear Information System (INIS)

Andreone, C.; Cizeron, G.; Larere, A.

1981-01-01

The strain-aging phenomena in high purity niobium were studied using tensile tests. Four parameters were considered which characterize the yield point, the permanent hardening, the recovery and the apparent yield stress. Five successive steps can be distinguished from the changes in these parameters with changes in the aging temperature. The detailed analysis of the phenomena involved concerns mainly the locking of dislocations by first- and second-type segregations and the opposite effect of reorganization of the dislocation network. (Auth.)

Synthetic Strategies for High Dielectric Constant Silicone Elastomers

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt

synthetic strategies were developed in this Ph.D. thesis, in order to create silicone elastomers with high dielectric constants and thereby higher energy densities. The work focused on maintaining important properties such as dielectric loss, electrical breakdown strength and elastic modulus....... The methodology therefore involved chemically grafting high dielectric constant chemical groups onto the elastomer network, as this would potentially provide a stable elastomer system upon continued activation of the material. The first synthetic strategy involved the synthesis of a new type of cross...... extender’ that allowed for chemical modifications such as Cu- AAC. This route was promising for one-pot elastomer preparation and as a high dielectric constant additive to commercial silicone systems. The second approach used the borane-catalysed Piers-Rubinsztajn reaction to form spatially well...

Cross Purposes: Love and Purity at a Puerto Rican Protestant High School

Science.gov (United States)

Seale-Collazo, James

2013-01-01

A "native" Christian ethnographer finds religious education at this church-sponsored school to pursue two distinct, and occasionally conflicting, curricula: "love" and "purity." The curriculum of love draws on what Turner called liminality and communitas in an effort to promote spiritual "encounters with…

Preparation and characterization of polymer-derived amorphous silicon carbide with silicon-rich stoichiometry

Energy Technology Data Exchange (ETDEWEB)

Masuda, Takashi, E-mail: mtakashi@jaist.ac.jp [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Iwasaka, Akira [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Takagishi, Hideyuki [Faculty of Symbiotic System Science, Fukushima University, 1 Kanayagawa, Fukushima-shi, Fukushima 960-1296 (Japan); Shimoda, Tatsuya [School of Material and Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan)

2016-08-01

Polydihydrosilane with pendant hexyl groups was synthesized to obtain silicon-rich amorphous silicon carbide (a-SiC) films via the solution route. Unlike conventional polymeric precursors, this polymer requires neither catalysts nor oxidation for its synthesis and cross-linkage. Therefore, the polymer provides sufficient purity for the fabrication of semiconducting a-SiC. Here, we investigated the correlation of Si/C stoichiometry between the polymer and the resultant a-SiC film. The structural, optical, and electrical properties of the films with various carbon contents were also explored. Experimental results suggested that the excess carbon that did not participate in Si−C configurations was decomposed and was evaporated during polymer-to-SiC conversion. Consequently, the upper limit of the carbon in resultant a-SiC film was < 50 at.%; namely, the polymer provided silicon-rich a-SiC, whereas the conventionally used polycarbosilane inevitably provides carbon-rich one. These features of this unusual polymer open up a frontier of polymer-derived SiC and solution-processed SiC electronics. - Highlights: • Polymeric precursor solution for silicon carbide (SiC) is synthesized. • Semiconducting amorphous SiC is prepared via solution route. • The excess carbon is decomposed during cross-linking resulting in Si-rich SiC films. • The grown SiC films contain substantial amount of hydrogen atoms as SiH{sub n}/CH{sub n} entities. • Presence of CH{sub n} entities induces dangling bonds, causing poor electrical properties.

Sorption-enhanced water gas shift reaction for high-purity hydrogen production: Application of a Na-Mg double salt-based sorbent and the divided section packing concept

International Nuclear Information System (INIS)

Lee, Chan Hyun; Lee, Ki Bong

2017-01-01

Highlights: •Na-Mg double salt-based sorbent was used for high-temperature CO 2 sorption. •Divided section packing concept was applied to the SE-WGS reaction. •High-purity H 2 was produced from the SE-WGS reaction with divided section packing. •High-purity H 2 productivity could be further enhanced by modifying packing method. -- Abstract: Hydrogen is considered a promising environmentally benign energy carrier because it has high energy density and produces no pollutants when it is converted into other types of energy. The sorption-enhanced water gas shift (SE-WGS) reaction, where the catalytic WGS reaction and byproduct CO 2 removal are carried out simultaneously in a single reactor, has received considerable attention as a novel method for high-purity hydrogen production. Since the high-purity hydrogen productivity of the SE-WGS reaction is largely dependent on the performance of the CO 2 sorbent, the development of sorbents having high CO 2 sorption capacity is crucial. Recently, a Na-Mg double salt-based sorbent has been considered for high-temperature CO 2 capture since it has been reported to have a high sorption capacity and fast sorption kinetics. In this study, the SE-WGS reaction was experimentally demonstrated using a commercial catalyst and a Na-Mg double salt-based sorbent. However, the SE-WGS reaction with a one-body hybrid solid, a physical admixture of catalyst and sorbent, showed poor reactivity and reduced CO 2 sorption uptake. As a result, a divided section packing concept was suggested as a solution. In the divided section packing method, the degree of mixing for the catalyst and sorbent in a column can be controlled by the number of sections. High-purity hydrogen (<10 ppm CO) was produced directly from the SE-WGS reaction with divided section packing, and the hydrogen productivity was further improved when the reactor column was divided into more sections and packed with more sorbent.

The determination of minor amounts of rare earth elements in high purity earth oxides by HPLC/IDMS

International Nuclear Information System (INIS)

Stijfhoorn, D.E.; Stray, H.; Hjelmseth, H.

1991-05-01

Since the early seventies isotopic dilution mass spectrometry (IDMS) has been used at Institutt for energiteknikk, Kjeller, Norway for determination and certification of rare earth elements in high purity Y 2 O 3 . These lanthanides have, during the last few decades, become more widely used in highly specialized technology. High purity, quality 4 N (99.99%) or even 5 N materials are needed for phosphors, lasers, optical fibers, X-ray films, and in contrast fluids for magnetic resonance imaging (MRI). However, in a matrix constisting primarily of a single lanthanide, IDMS alone will not be effective due to isobaric interferences from the main elements or the mono-oxides formed in the ion source. On the other hand, high performance liquid chromatography (HPLC) may be used, but the detection limit will be in the order of 5 to 10 ppm/W. In this work a combination of HPLC and IDMS has been used to lower the detection limit to 1 ppm/W, where the sample is spiked before separation by HPLC, followed by IDMS analysis of the HPLC- fractions. In some cases the HPLC-process has to be repeated to remove the main element completly. Results are presented for Dy 2 O 3 and Nd 2 O 3 , but similar separating procedures can be applied for other rare earth oxides. 3 refs., 2 figs. 2 tabs

Hydrophilic functionalized silicon nanoparticles produced by high energy ball milling

Science.gov (United States)

Hallmann, Steffen

The mechanochemical synthesis of functionalized silicon nanoparticles using High Energy Ball Milling (HEBM) is described. This method facilitates the fragmentation of mono crystalline silicon into the nanometer regime and the simultaneous surface functionalization of the formed particles. The surface functionalization is induced by the reaction of an organic liquid, such as alkynes and alkenes with reactive silicon sites. This method can be applied to form water soluble silicon nanoparticles by lipid mediated micelle formation and the milling in organic liquids containing molecules with bi-functional groups, such as allyl alcohol. Furthermore, nanometer sized, chloroalkyl functionalized particles can be synthesized by milling the silicon precursor in the presence of an o-chloroalkyne with either alkenes or alkynes as coreactants. This process allows tuning of the concentration of the exposed, alkyl linked chloro groups, simply by varying the relative amounts of the coreactant. The silicon nanoparticles that are formed serve as the starting point for a wide variety of chemical reactions, which may be used to alter the surface properties of the functionalized nanoparticles. Finally, the use of functionalized silicon particles for the production of superhydrophobic films is described. Here HEBM proves to be an efficient method to produce functionalized silicon particles, which can be deposited to form a stable coating exhibiting superhydrophobic properties. The hydrophobicity of the silicon film can be tuned by the milling time and thus the resulting surface roughness of the films.

Purity and adulterant analysis of crack seizures in Brazil.

Science.gov (United States)

Fukushima, André R; Carvalho, Virginia M; Carvalho, Débora G; Diaz, Ernesto; Bustillos, Jose Oscar William Vega; Spinosa, Helenice de S; Chasin, Alice A M

2014-10-01

Cocaine represents a serious problem to society. Smoked cocaine is very addictive and it is frequently associated with violence and health issues. Knowledge of the purity and adulterants present in seized cocaine, as well as variations in drug characteristics are useful to identify drug source and estimate health impact. No data are available regarding smoked cocaine composition in most countries, and the smoked form is increasing in the Brazilian market. The purpose of the present study is to contribute to the current knowledge on the status of crack cocaine seized samples on the illicit market by the police of São Paulo. Thus, 404 samples obtained from street seizures conducted by the police were examined. The specimens were macroscopically characterized by color, form, odor, purity, and adulterant type, as well as smoke composition. Samples were screened for cocaine using modified Scott test and thin-layer chromatographic (TLC) technique. Analyses of purity and adulterants were performed with gas chromatography equipped with flame ionization detector (GC-FID). Additionally, smoke composition was analyzed by GC-mass spectrometry (MS), after samples burning. Samples showed different colors and forms, the majority of which is yellow (74.0%) or white (20.0%). Samples free of adulterants represented 76.3% of the total. Mean purity of the analyzed drug was 71.3%. Crack cocaine presented no correlations between macroscopic characteristics and purity. Smoke analysis showed compounds found also in the degradation of diesel and gasoline. Therefore, the drug marketed as crack cocaine in São Paulo has similar characteristics to coca paste. High purity can represent a greater risk of dependency and smoke compounds are possibly worsening drug health impact. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

Determination of uranium in natural waters and high-purity aluminum by flow-injection on-line preconcentration and ICP-MS detection

International Nuclear Information System (INIS)

Seki, Tatsuya; Oguma, Koichi

2004-01-01

A flow injection method has been developed for the determination of uranium is natural waters and high-purity aluminum by use of on-line preconcentration on a U/TEVA TM column and ICP-MS detection. The sample solution prepared as a nitric acid solution in 3 mol l -1 was passed through the U/TEVA TM column to collect uranium and uranium adsorbed was eluted with 0.1 mol l -1 nitric acid. The effluent was introduced directly into the nebulizer of the ICP-MS and 238 U was measured. The detection limit, calculated as 3-times the standard deviation of the background noise, was 3pg and the sample throughput was about 10 per hour. The proposed method was successfully applied to the determination of uranium in river-water reference materials, a seawater reference material and high-purity aluminum reference materials. (author)

Development of a facility for the recovery of high-purity hydrogen from coke oven gas by pressure swing adsorption

Energy Technology Data Exchange (ETDEWEB)

Nakamura, M; Saida, K; Uenoyama, K; Sugishita, M; Imokawa, K

1985-01-01

This paper reports 1) a pressure swing adsorption (PSA) system comprising three towers, each packed with three different adsorbents; and 2) studies of the application of this system to the recovery of high-purity hydrogen from coke oven gas. Running the adsorption plant at 35 C and 9.5 kg/cm/sup 2/ gives optimum operating stability and economy. In addition, an optimum time cycle for the three-tower system has been developed. Gas from the PSA equipment proper still contains traces of oxygen. This is removed in a further tower packed with Pd catalyst. The ultimate recovery of hydrogen is closely related to its concentration in the raw coke oven gas and to the degree of purity attained. 3 references.

Abridged acid-base wet-milling synthesis of high purity hydroyapatite

Directory of Open Access Journals (Sweden)

Sandi Carolina Ruiz-Mendoza

2008-06-01

Full Text Available There is a plethora of routes to produce hydroxyapatite(HA and in general calcium phosphates(CP but production usually leads to a mixture of several phases. Besides ionic contamination, most of these methods are cumbersome, restricted to small volumes of product and require a lot of thermal energy. The acid-base route eliminates foreign ions or additives and its only byproduct is water. Heterogeneous reaction drawback is that solid reactants do not easily come in contact with each other and therefore addition and stirring times become very lengthy and still the product is a mixture. The synthesis started from calcium hydroxide and phosphoric acid (PA. Ball milling was used to favor kinetics and stoichiometry. Six sets of PA addition, paddle stirring and ball milling times were used. Products were evaluated by X ray diffraction (XRD, Fourier Transform Infrared (FTIR, scanning electron microscopy (SEM, X ray fluorescence (XRF and Ca/P ratio. Chemical analysis for calcium proceeded through oxalate precipitate and phosphorus by the phosphomolibdate technique. A set of conditions yielding high purity HA was established.

Multicurie, transportable, integrally shielded 123Xe → 123I generator and processing system for high-purity iodine-123 production

International Nuclear Information System (INIS)

Lagunas-Solar, M.C.; Thibeau, H.L.; Goodart, C.E.; Little, F.E.; Navarro, N.J.; Hartnett, D.E.

1985-01-01

An integrally shielded 123 Xe → 123 I generator system has been designed and tested under production conditions for its suitability as a multicurie handling device from which to produce radiopharmaceutical-quality high-purity no-carrier-added (NCA) 123 I. The 123 Xe → 123 I generator system is expected to provide an alternative to current techniques and to increase the availability and reliability of high-purity 123 I made via the 127 I(p,5n) 123 Xe → 123 I nuclear reaction. The generator system is based on the Crocker Nuclear Laboratory's continuous-flow production system which has been operating since 1974 for the multicurie production of 123 I. The generator system, which consists of an integrally shielded xenon trap and separate loading and processing apparatuses, is simple and reliable to operate, can be adapted to computerized control, and provides a safe working environment for the repeated handling of multicurie amounts of Xe-I radioactivities

Simple processing of high efficiency silicon solar cells

International Nuclear Information System (INIS)

Hamammu, I.M.; Ibrahim, K.

2006-01-01

Cost effective photovoltaic devices have been an area research since the development of the first solar cells, as cost is the major factor in their usage. Silicon solar cells have the biggest share in the photovoltaic market, though silicon os not the optimal material for solar cells. This work introduces a simplified approach for high efficiency silicon solar cell processing, by minimizing the processing steps and thereby reducing cost. The suggested procedure might also allow for the usage of lower quality materials compared to the one used today. The main features of the present work fall into: simplifying the diffusion process, edge shunt isolation and using acidic texturing instead of the standard alkaline processing. Solar cells of 17% efficiency have been produced using this procedure. Investigations on the possibility of improving the efficiency and using less quality material are still underway

Chemical analysis of high purity graphite

International Nuclear Information System (INIS)

1993-03-01

The Sub-Committee on Chemical Analysis of Graphite was organized in April 1989, under the Committee on Chemical Analysis of Nuclear Fuels and Reactor Materials, JAERI. The Sub-Committee carried out collaborative analyses among eleven participating laboratories for the certification of the Certified Reference Materials (CRMs), JAERI-G5 and G6, after developing and evaluating analytical methods during the period of September 1989 to March 1992. The certified values were given for ash, boron and silicon in the CRM based on the collaborative analysis. The values for ten elements (Al, Ca, Cr, Fe, Mg, Mo, Ni, Sr, Ti, V) were not certified, but given for information. Preparation, homogeneity testing and chemical analyses for certification of reference materials were described in this paper. (author) 52 refs

TEM investigation of aluminium containing precipitates in high aluminium doped silicon carbide

International Nuclear Information System (INIS)

Wong-Leung, J.; FitzGerald, J.D.

2002-01-01

Full text: Silicon carbide is a promising semiconductor material for applications in high temperature and high power devices. The successful growth of good quality epilayers in this material has enhanced its potential for device applications. As a novel semiconductor material, there is a need for studying its basic physical properties and the role of dopants in this material. In this study, silicon carbide epilayers were grown on 4H-SiC wafers of (0001) orientation with a miscut angle of 8 deg at a temperature of 1550 deg C. The epilayers contained regions of high aluminium doping well above the solubility of aluminium in silicon carbide. High temperature annealing of this material resulted in the precipitation of aluminium in the wafers. The samples were analysed by secondary ion mass spectrometry and transmission electron microscopy. Selected area diffraction studies show the presence of aluminium carbide and aluminium silicon carbide phases. Copyright (2002) Australian Society for Electron Microscopy Inc

High Aspect Ratio Sub-15 nm Silicon Trenches From Block Copolymer Templates

Science.gov (United States)

Gu, Xiaodan; Liu, Zuwei; Gunkel, Ilja; Olynick, Deirdre; Russell, Thomas; University of Massachusetts Amherst Collaboration; Oxford Instrument Collaboration; Lawrence Berkeley National Lab Collaboration

2013-03-01

High-aspect-ratio sub-15 nm silicon trenches are fabricated directly from plasma etching of a block copolymer (BCP) mask. Polystyrene-b-poly(2-vinyl pyridine) (PS-b-P2VP) 40k-b-18k was spin coated and solvent annealed to form cylindrical structures parallel to the silicon substrate. The BCP thin film was reconstructed by immersion in ethanol and then subjected to an oxygen and argon reactive ion etching to fabricate the polymer mask. A low temperature ion coupled plasma with sulfur hexafluoride and oxygen was used to pattern transfer block copolymer structure to silicon with high selectivity (8:1) and fidelity. The silicon pattern was characterized by scanning electron microscopy and grazing incidence x-ray scattering. We also demonstrated fabrication of silicon nano-holes using polystyrene-b-polyethylene oxide (PS-b-PEO) using same methodology described above for PS-b-P2VP. Finally, we show such silicon nano-strucutre serves as excellent nano-imprint master template to pattern various functional materials like poly 3-hexylthiophene (P3HT).

Computers in the investigation of the impurity content of high-purity materials

International Nuclear Information System (INIS)

Makarov, Yu.B.; Yan'kov, S.V.

1987-01-01

The efficiency of the concept of data banks for the accumulation and processing of information is now generally acknowledged. In scientific investigations not only bibliographic but also factual data banks are becoming more and more prevalent. In this article, the authors consider the possibilities of providing a data bank on high-purity materials for the study of impurity contents. Also in this paper, the authors distinguish the following groups of problems that arise in the study of impurity composition and presents examples of their proposed solutions to these problems: the analysis of error and the determination of the most probably value of impurity concentration; the estimation of average properties of impurity composition with respect to groups of impurities and samples, and the forecast of the complete impurity composition

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

Energy Technology Data Exchange (ETDEWEB)

Martini, R., E-mail: roberto.martini@imec.be [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Kepa, J.; Stesmans, A. [Department of Physics, KU Leuven, Celestijnenlaan 200 D, 3001 Leuven (Belgium); Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I. [imec, Kapeldreef 75, 3001 Leuven (Belgium); Poortmans, J. [Department of Electrical Engineering, KU Leuven, Kasteelpark 10, 3001 Leuven (Belgium); imec, Kapeldreef 75, 3001 Leuven (Belgium); Universiteit Hasselt, Martelarenlaan 42, B-3500 Hasselt (Belgium)

2014-10-27

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Thin silicon foils produced by epoxy-induced spalling of silicon for high efficiency solar cells

International Nuclear Information System (INIS)

Martini, R.; Kepa, J.; Stesmans, A.; Debucquoy, M.; Depauw, V.; Gonzalez, M.; Gordon, I.; Poortmans, J.

2014-01-01

We report on the drastic improvement of the quality of thin silicon foils produced by epoxy-induced spalling. In the past, researchers have proposed to fabricate silicon foils by spalling silicon substrates with different stress-inducing materials to manufacture thin silicon solar cells. However, the reported values of effective minority carrier lifetime of the fabricated foils remained always limited to ∼100 μs or below. In this work, we investigate epoxy-induced exfoliated foils by electron spin resonance to analyze the limiting factors of the minority carrier lifetime. These measurements highlight the presence of disordered dangling bonds and dislocation-like defects generated by the exfoliation process. A solution to remove these defects compatible with the process flow to fabricate solar cells is proposed. After etching off less than 1 μm of material, the lifetime of the foil increases by more than a factor of 4.5, reaching a value of 461 μs. This corresponds to a lower limit of the diffusion length of more than 7 times the foil thickness. Regions with different lifetime correlate well with the roughness of the crack surface which suggests that the lifetime is now limited by the quality of the passivation of rough surfaces. The reported values of the minority carrier lifetime show a potential for high efficiency (>22%) thin silicon solar cells.

Effect of acid leaching conditions on impurity removal from silicon doped by magnesium

Directory of Open Access Journals (Sweden)

Stine Espelien

2017-07-01

Full Text Available The effect of magnesium addition into a commercial silicon and its leaching refining behavior is studied for producing solar grade silicon feedstock. Two different levels of Mg is added into a commercial silicon and the leaching of the produced alloys by 10% HCl solution at 60 ℃ for different durations is performed. It is shown that the microstructure of the alloy and in particular the distribution of eutectic phases is dependent on the amount of the added Mg. Moreover, the metallic impurities in silicon such as Fe, Al, Ca and Ti are mainly forming silicide particles with different compositions. These silicides are physically more detached from the primary silicon grains and their removal through chemical and physical separation in leaching is better for higher Mg additions. It is observed that the leaching is more effective for the purification of smaller silicon particles produced from each Mg-doped silicon alloy. It is shown that acid leaching by the applied method is effective to reach more than 70% of phosphorous removal. It is also shown that the purity of silicon is dependent on the total Mg removal and effectiveness of leaching on removing the Mg2Si phase.

Neutron activation analysis of high purity silver using high resolution gamma-spectrometry

International Nuclear Information System (INIS)

Gilbert, E.N.; Veriovkin, G.V.; Botchkaryov, B.N.; Godovikov, A.A.; Zhavoronkov, V.Ya.; Mikhailov, V.A.

1975-01-01

A method of neutron activation determination of microimpurities in high purity silver has been developed. For matrix activity separation the extraction of silver by dibuthylsulfide /DBS/ was employed. The purification coefficient was 10 8 after triple extraction. To study the behaviour of microimpurities in the extraction procedure and to determine their chemical yields some tracer experiments were undertaken with radionuclides of Na, Se, Fe, Co, Cu, As, Sc, Te, Zr, Hf, Mo, W, Cd, In, Sb, La, Ce, Eu, Ta, Re, Ir, Ru. All the elements studied were found to remain in the aqueous phase up to 96-99% after triple extraction with DBS. To estimate the accuracy of the method and to study the mutual influence of the elements in the sample in various relative amounts on the accuracy of the analysis, a number of experiments of ''added-found'' type was performed and the results were treated statistically. In these experiments model mixtures of 30 nuclides were analysed after triple DBS extraction. The t-criterion values for the confidence interval at P=0.95 show the absence of systematic errors. Variation coefficient values do not exceed 15%. Using Ge/Li/ detector it was possible to determine 30 elements simultaneously in silver samples. (T.G.)

Quantitative influence of minor and impurity elements on hot cracking susceptibility of extra high-purity type 310 stainless steel

International Nuclear Information System (INIS)

Saida, Kazuyoshi; Matsushita, Hideki; Nishimoto, Kazutoshi; Kiuchi, Kiyoshi; Nakayama, Junpei

2013-01-01

To evaluate the influence of minor and impurity elements such as C, Mn, P and S on the solidification and ductility-dip cracking susceptibilities of extra high-purity type 310 stainless steels, the transverse-Varestraint test was conducted by using several type 310 stainless steels with different amounts of C, Mn, P and S. Two types of hot cracks occurred in these steels by Varestraint test; solidification and ductility-dip cracks. The solidification cracking susceptibility was significantly reduced as the amounts of C, P and S decreased. The ductility-dip cracking susceptibility also reduced with a decrease in P and S contents. It adversely, however, increased as the C content of the steels was reduced. Mn didn't greatly affect the hot cracking susceptibility of the extra high-purity steels. The characteristic influence on solidification cracking was the ratio of P:S:C=1:1.3:0.56, while Mn negligibly ameliorated solidification cracking in the extra low S (and P) steels. The numerical analysis on the solidification brittle temperature range (BTR) revealed that the reduced solidification cracking susceptibility with decreasing the amounts of C, P and S in steel could be attributed to the reduced BTR due to the suppression of solidification segregation of minor and impurity elements in the finally solidified liquid film between dendrites. On the other hand, a molecular orbital analysis to estimate the binding strength of the grain boundary suggested that the increased ductility-dip cracking susceptibility in extra high-purity steels was caused by grain boundary embrittlement due to the refining of beneficial elements for grain boundary strengthening such as C. (author)

The probability distribution of intergranular stress corrosion cracking life for sensitized 304 stainless steels in high temperature, high purity water

International Nuclear Information System (INIS)

Akashi, Masatsune; Kenjyo, Takao; Matsukura, Shinji; Kawamoto, Teruaki

1984-01-01

In order to discuss the probability distribution of intergranular stress corrsion carcking life for sensitized 304 stainless steels, a series of the creviced bent beem (CBB) and the uni-axial constant load tests were carried out in oxygenated high temperature, high purity water. The following concludions were resulted; (1) The initiation process of intergranular stress corrosion cracking has been assumed to be approximated by the Poisson stochastic process, based on the CBB test results. (2) The probability distribution of intergranular stress corrosion cracking life may consequently be approximated by the exponential probability distribution. (3) The experimental data could be fitted to the exponential probability distribution. (author)

Analysis of the Purity of Cetrimide by Titrations

DEFF Research Database (Denmark)

Andersen, Jens Enevold Thaulov; Rasmussen, Claus/Dallerup; Nielsen, Hans/Boye

2006-01-01

. Titration by perchloric acid showed a 99.69 ± 0.05 % purity of cetrimide and titration by silver nitrate showed a 99.85% ± 0.05 % purity while the traditional assay method predicted a purity of only 97.1 ± 0.4. It was found that the discrepancy could be identified as differences in selectivity during...

Formation and evolution of tweed structures on high-purity aluminum polycrystalline foils under cyclic tension

International Nuclear Information System (INIS)

Kuznetsov, P. V.; Vlasov, I. V.; Sklyarova, E. A.; Smekalina, T. V.

2015-01-01

Peculiarities of formation and evolution of tweed structures on the surface of high-purity aluminum polycrystalline foils under cyclic tension were studied using an atom force microscope and a white light interferometer. Tweed structures of micron and submicron sizes were found on the foils at different number of cycles. In the range of 42,000 < N < 95,000 cycles destruction of tweed patterns is observed, which leads to their disappearance from the surface of the foils. Formation of tweed structures of various scales is discussed in terms of the Grinfeld instability

Ultra-high-speed wavelength conversion in a silicon photonic chip

DEFF Research Database (Denmark)

Hu, Hao; Ji, Hua; Galili, Michael

2011-01-01

We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...

High-{Tc} superconducting antenna-coupled microbolometer on silicon

Energy Technology Data Exchange (ETDEWEB)

Rice, J.P.; Grossman, E.N.; Borcherdt, L.J.; Rudman, D.A. [National Inst. of Standards and Technology, Boulder, CO (United States). Cryoelectronic Metrology Group

1994-12-31

A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-{Tc} superconductor YBa{sub 2}Cu{sub 3}O{sub 7} (YBCO) on silicon. The YBCO and a buffer layer of yttria-stabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A silicon-micromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 {times} 10{sup {minus}6} W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 {micro}s, a responsivity in the 1,000 V/W range, and a noise-equivalent power (NEP) in the 10{sup {minus}12} W/Hz{sup 1/2} range at 1,000 Hz.

Calibration of Single High Purity Germanium Detector for Whole Body Counter

International Nuclear Information System (INIS)

Taha, T.M.; Morsi, T.M.

2009-01-01

A new Accuscan II single germanium detector for whole body counter was installed in NRC (Egypt). The current paper concerned on calibration of single high purity germanium detector for whole body counter. Physical parameters affecting on performance of whole body counter such as linearity, minimum detectable activity and source detector distance, SDD were investigated. Counting efficiencies for the detector have been investigated in rear wall, fixed diagnostic position in air. Counting efficiencies for organ compartments such as thyroid, lung, upper and lower gastrointestinal tract have been investigated using transfer phantom in fixed diagnostic and screening positions respectively. The organ compartment efficiencies in screening geometry were higher than that value of diagnostic geometry by a factor of three. The committed dose equivalents of I-131 in thyroid were ranged from 0.073 ± 0.004 to 1.73±0.09 mSv and in lung was 0.02±0.001 mSv

Electrical characterization of high-pressure reactive sputtered ScOx films on silicon

International Nuclear Information System (INIS)

Castan, H.; Duenas, S.; Gomez, A.; Garcia, H.; Bailon, L.; Feijoo, P.C.; Toledano-Luque, M.; Prado, A. del; San Andres, E.; Lucia, M.L.

2011-01-01

Al/ScO x /SiN x /n-Si and Al/ScO x /SiO x /n-Si metal-insulator-semiconductor capacitors have been electrically characterized. Scandium oxide was grown by high-pressure sputtering on different substrates to study the dielectric/insulator interface quality. The substrates were silicon nitride and native silicon oxide. The use of a silicon nitride interfacial layer between the silicon substrate and the scandium oxide layer improves interface quality, as interfacial state density and defect density inside the insulator are decreased.

Silicon-Light: a European FP7 Project Aiming at High Efficiency Thin Film Silicon Solar Cells on Foil

DEFF Research Database (Denmark)

Soppe, W.; Haug, F.-J.; Couty, P.

2011-01-01

Silicon-Light is a European FP7 project, which started January 1st, 2010 and aims at development of low cost, high-efficiency thin film silicon solar cells on foil. Three main routes are explored to achieve these goals: a) advanced light trapping by implementing nanotexturization through UV Nano...... calculations of ideal nanotextures for light trapping in thin film silicon solar cells; the fabrication of masters and the replication and roll-to-roll fabrication of these nanotextures. Further, results on ITO variants with improved work function are presented. Finally, the status of cell fabrication on foils...

Characterization of high-purity niobium structures fabricated using the electron beam melting process

Science.gov (United States)

Terrazas Najera, Cesar Adrian

Additive Manufacturing (AM) refers to the varied set of technologies utilized for the fabrication of complex 3D components from digital data in a layer-by-layer fashion. The use of these technologies promises to revolutionize the manufacturing industry. The electron beam melting (EBM) process has been utilized for the fabrication of fully dense near-net-shape components from various metallic materials. This process, catalogued as a powder bed fusion technology, consists of the deposition of thin layers (50 - 120microm) of metallic powder particles which are fused by the use of a high energy electron beam and has been commercialized by Swedish company Arcam AB. Superconducting radio frequency (SRF) cavities are key components that are used in linear accelerators and other light sources for studies of elemental physics. Currently, cavity fabrication is done by employing different forming processes including deep-drawing and spinning. In both of the latter techniques, a feedstock high-purity niobium sheet with a thickness ranging from 3-4 mm is mechanically deformed and shaped into the desired geometry. In this manner, half cavities are formed that are later joined by electron beam welding (EBW). The welding step causes variability in the shape of the cavity and can also introduce impurities at the surface of the weld interface. The processing route and the purity of niobium are also of utmost importance since the presence of impurities such as inclusions or defects can be detrimental for the SRF properties of cavities. The focus of this research was the use of the EBM process in the manufacture of high purity niobium parts with potential SRF applications. Reactor grade niobium was plasma atomized and used as the precursor material for fabrication using EBM. An Arcam A2 system was utilized for the fabrication. The system had all internal components of the fabrication chamber replaced and was cleaned to prevent contamination of niobium powder. A mini-vat, developed at

Silicon Valley: Planet Startup : Disruptive Innovation, Passionate Entrepreneurship & High-tech Startups

NARCIS (Netherlands)

dr. A. Maas; Dr. P. Ester

2016-01-01

For decades now, Silicon Valley has been the home of the future. It's the birthplace of the world's most successful high-tech companies-including Apple, Yahoo, Google, Facebook, Twitter, and many more. So what's the secret? What is it about Silicon Valley that fosters entrepreneurship and

Monitoring the Microbial Purity of the Treated Water and Dialysate

Directory of Open Access Journals (Sweden)

Canaud Bernard

2001-01-01

Full Text Available Dialysate purity has become a major concern in recent years since it has been proven that contamination of dialysate is able to induce the production of proinflammatory cytokines, putatively implicated in the development of dialysis related pathology. In order to reduce this risk, it is advised to use ultrapure dialysate as a new standard of dialysate purity. Ultrapure dialysate preparation may be easily achieved with modern water treatment technologies. The reliable production of ultrapure dialysate requires several prerequisites: use of ultrapure water, use of clean electrolytic concentrates, implementation of ultrafilters in the dialysate pathway to ensure cold sterilization of the fresh dialysate. The regular supply with such high-grade purity dialysate relies on predefined microbiological monitoring of the chain using adequate and sensitive methods, and hygienic handling including frequent disinfection to reduce the level of contamination and to prevent biofilm formation. Reliability of this process requires compliance with a very strict quality assurance process. In this paper, we summarized the principles of the dialysate purity monitoring and the criteria used for surveillance in order to establish good antimicrobial practices in dialysis.

Structural and optical properties of silicon-carbide nanowires produced by the high-temperature carbonization of silicon nanostructures

Energy Technology Data Exchange (ETDEWEB)

Pavlikov, A. V., E-mail: pavlikov@physics.msu.ru [Moscow State University, Faculty of Physics (Russian Federation); Latukhina, N. V.; Chepurnov, V. I. [Samara National Researh University (Russian Federation); Timoshenko, V. Yu. [Moscow State University, Faculty of Physics (Russian Federation)

2017-03-15

Silicon-carbide (SiC) nanowire structures 40–50 nm in diameter are produced by the high-temperature carbonization of porous silicon and silicon nanowires. The SiC nanowires are studied by scanning electron microscopy, X-ray diffraction analysis, Raman spectroscopy, and infrared reflectance spectroscopy. The X-ray structural and Raman data suggest that the cubic 3C-SiC polytype is dominant in the samples under study. The shape of the infrared reflectance spectrum in the region of the reststrahlen band 800–900 cm{sup –1} is indicative of the presence of free charge carriers. The possibility of using SiC nanowires in microelectronic, photonic, and gas-sensing devices is discussed.

Preparation of High-purity Indium Oxalate Salt from Indium Scrap by Organic Acids

International Nuclear Information System (INIS)

Koo, Su-Jin; Ju, Chang-Sik

2013-01-01

Effect of organic acid on the preparation of indium-oxalate salt from indium scraps generated from ITO glass manufacturing process was studied. Effects of parameters, such as type and concentration of organic acids, pH of reactant, temperature, reaction time on indium-oxalate salt preparation were examined. The impurity removal efficiency was similar for both oxalic acid and citric acid, but citric acid did not make organic acid salt with indium. The optimum conditions were 1.5 M oxalic acid, pH 7, 80 .deg. C, and 6 hours. On the other hand, the recoveries increased with pH, but the purity decreased. The indium-oxalate salt purity prepared by two cycles was 99.995% (4N5). The indium-oxalate salt could be converted to indium oxide and indium metal by substitution reaction and calcination

High Surface Area of Porous Silicon Drives Desorption of Intact Molecules

Science.gov (United States)

Northen, Trent R.; Woo, Hin-Koon; Northen, Michael T.; Nordström, Anders; Uritboonthail, Winnie; Turner, Kimberly L.; Siuzdak, Gary

2007-01-01

The surface structure of porous silicon used in desorption/ionization on porous silicon (DIOS) mass analysis is known to play a primary role in the desorption/ionization (D/I) process. In this study, mass spectrometry and scanning electron microscopy (SEM) are used to examine the correlation between intact ion generation with surface ablation, and surface morphology. The DIOS process is found to be highly laser energy dependent and correlates directly with the appearance of surface ions (Sin+ and OSiH+). A threshold laser energy for DIOS is observed (10 mJ/cm2), which supports that DIOS is driven by surface restructuring and is not a strictly thermal process. In addition, three DIOS regimes are observed which correspond to surface restructuring and melting. These results suggest that higher surface area silicon substrates may enhance DIOS performance. A recent example which fits into this mechanism is silicon nanowires surface which have a high surface energy and concomitantly requires lower laser energy for analyte desorpton. PMID:17881245

A III-V nanowire channel on silicon for high-performance vertical transistors.

Science.gov (United States)

Tomioka, Katsuhiro; Yoshimura, Masatoshi; Fukui, Takashi

2012-08-09

Silicon transistors are expected to have new gate architectures, channel materials and switching mechanisms in ten years' time. The trend in transistor scaling has already led to a change in gate structure from two dimensions to three, used in fin field-effect transistors, to avoid problems inherent in miniaturization such as high off-state leakage current and the short-channel effect. At present, planar and fin architectures using III-V materials, specifically InGaAs, are being explored as alternative fast channels on silicon because of their high electron mobility and high-quality interface with gate dielectrics. The idea of surrounding-gate transistors, in which the gate is wrapped around a nanowire channel to provide the best possible electrostatic gate control, using InGaAs channels on silicon, however, has been less well investigated because of difficulties in integrating free-standing InGaAs nanostructures on silicon. Here we report the position-controlled growth of vertical InGaAs nanowires on silicon without any buffering technique and demonstrate surrounding-gate transistors using InGaAs nanowires and InGaAs/InP/InAlAs/InGaAs core-multishell nanowires as channels. Surrounding-gate transistors using core-multishell nanowire channels with a six-sided, high-electron-mobility transistor structure greatly enhance the on-state current and transconductance while keeping good gate controllability. These devices provide a route to making vertically oriented transistors for the next generation of field-effect transistors and may be useful as building blocks for wireless networks on silicon platforms.

Preparation of high purity nickel film from industrial effluent by the distribution of charge over microelectrodes using newly designed free electrolytic diffusion approach

International Nuclear Information System (INIS)

Ahmed, Sheikh Asrar; Qadir, Muhammad Abdul; Zafar, Muhammad Nadeem; Hussain, Ishtiaq; Tufail, Shahid; Rashid, Saima; Shah, Hamid Ali

2008-01-01

The present work deals with the development of a newly designed free electrolytic diffusion approach (the distribution of charge over microelectrodes) for the purification of metals and was successfully applied for the purification of nickel from the industrial effluent containing high proportion of nickel. Atomic absorption spectrophotometer (AAS) analyzed the purified nickel deposited on working microelectrodes. The results obtained show that the purity of nickel was enhanced from 95% to 99.9% with traces of copper etc. It was concluded that distribution of charge over the microcathodes at a rate of 50 cycles per second (cps) shows better results for the production of high purity (HP) nickel as compared to 25 cycles per second (cps)

Preparation of high purity nickel film from industrial effluent by the distribution of charge over microelectrodes using newly designed free electrolytic diffusion approach

Energy Technology Data Exchange (ETDEWEB)

Ahmed, Sheikh Asrar; Qadir, Muhammad Abdul [Institute of Chemistry, University of the Punjab, Lahore, 54590 (Pakistan); Zafar, Muhammad Nadeem [Institute of Chemistry, University of the Punjab, Lahore, 54590 (Pakistan)], E-mail: znadeempk@yahoo.com; Hussain, Ishtiaq [Institute of Chemistry, University of the Punjab, Lahore, 54590 (Pakistan); Tufail, Shahid [PCSIR Laboratories Complex, Feroz pur Road, Lahore (Pakistan); Rashid, Saima; Shah, Hamid Ali [Institute of Chemistry, University of the Punjab, Lahore, 54590 (Pakistan)

2008-09-15

The present work deals with the development of a newly designed free electrolytic diffusion approach (the distribution of charge over microelectrodes) for the purification of metals and was successfully applied for the purification of nickel from the industrial effluent containing high proportion of nickel. Atomic absorption spectrophotometer (AAS) analyzed the purified nickel deposited on working microelectrodes. The results obtained show that the purity of nickel was enhanced from 95% to 99.9% with traces of copper etc. It was concluded that distribution of charge over the microcathodes at a rate of 50 cycles per second (cps) shows better results for the production of high purity (HP) nickel as compared to 25 cycles per second (cps)

High polarization purity operation of 99% in 9xx-nm broad stripe laser diodes

Science.gov (United States)

Morohashi, Rintaro; Yamagata, Yuji; Kaifuchi, Yoshikazu; Tada, Katsuhisa; Nogawa, Ryozaburo; Yamada, Yumi; Yamaguchi, Masayuki

2018-02-01

Polarization characteristics of self-aligned stripe (SAS) laser diodes (LDs) and Ridge-LDs are investigated to realize highly efficient polarization beam combined (PBC) LD modules. Vertical layers of both lasers are designed identically. Near field patterns (NFP) of TM polarization for the Ridge-LD showed peaks at the side edges, as expected by the strain simulation. On the other hand, SAS-LD showed a relatively flat and weak profile. Polarization purity (ITE/ (ITE+ITM)) of SAS-LDs exceeds 99%, while those of the Ridge-LDs are as low as 96%. It is confirmed that our SAS-LDs are suitable sources for PBC with low power loss.

Properties of structural steels melted out of high-purity charge

International Nuclear Information System (INIS)

Marchenko, V.N.; Sergeeva, T.K.; Kondakova, N.K.; Morozov, V.P.; Madorskij, L.L.

1993-01-01

A comparative evaluation has been made of impurities, mechanical properties and hydrogen embirittlement parameters for steels type 40Kh and 40KhS produced by electrometallurgical method with the use of direct reduced charge (DR-steels) and melted in an open-hearth furnace. Investigation results have shown that 40Kh and 40KhS Dr-steels have more coarse austenitic grains and experience more complete transformation of martensite into ferritic-pearlitic mixture on tempering. Threshold stresses increase 2.5 times due to purity enhancement at the expense of application of direct reduced charge

Radiation-hard silicon photonics for high energy physics and beyond

CERN Multimedia

CERN. Geneva

2016-01-01

Silicon photonics (SiPh) is currently being investigated as a promising technology for future radiation hard optical links. The possibility of integrating SiPh devices with electronics and/or silicon particle sensors as well as an expected very high resistance against radiation damage make this technology particularly interesting for potential use close to the interaction points in future in high energy physics experiments and other radiation-sensitive applications. The presentation will summarize the outcomes of the research on radiation hard SiPh conducted within the ICE-DIP projected.

Formation of SiC using low energy CO2 ion implantation in silicon

International Nuclear Information System (INIS)

Sari, A.H.; Ghorbani, S.; Dorranian, D.; Azadfar, P.; Hojabri, A.R.; Ghoranneviss, M.

2008-01-01

Carbon dioxide ions with 29 keV energy were implanted into (4 0 0) high-purity p-type silicon wafers at nearly room temperature and doses in the range between 1 x 10 16 and 3 x 10 18 ions/cm 2 . X-ray diffraction analysis (XRD) was used to characterize the formation of SiC in implanted Si substrate. The formation of SiC and its crystalline structure obtained from above mentioned technique. Topographical changes induced on silicon surface, grains and evaluation of them at different doses observed by atomic force microscopy (AFM). Infrared reflectance (IR) and Raman scattering measurements were used to reconfirm the formation of SiC in implanted Si substrate. The electrical properties of implanted samples measured by four point probe technique. The results show that implantation of carbon dioxide ions directly leads to formation of 15R-SiC. By increasing the implantation dose a significant changes were also observed on roughness and sheet resistivity properties.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

Science.gov (United States)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

International Nuclear Information System (INIS)

Duraia, El-Shazly M.; Mansurov, Z.A.; Tokmolden, S.; Beall, Gary W.

2010-01-01

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm -1 and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Preparation of highly aligned silicon oxide nanowires with stable intensive photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Duraia, El-Shazly M., E-mail: duraia_physics@yahoo.co [Suez Canal University, Faculty of Science, Physics Department, Ismailia (Egypt); Al-Farabi Kazakh National University, Almaty (Kazakhstan); Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Mansurov, Z.A. [Al-Farabi Kazakh National University, Almaty (Kazakhstan); Tokmolden, S. [Institute of Physics and Technology, 11 Ibragimov Street, 050032 Almaty (Kazakhstan); Beall, Gary W. [Texas State University-San Marcos, Department of Chemistry and Biochemistry, 601 University Dr., San Marcos, TX 78666 (United States)

2010-02-15

In this work we report the successful formation of highly aligned vertical silicon oxide nanowires. The source of silicon was from the substrate itself without any additional source of silicon. X-ray measurement demonstrated that our nanowires are amorphous. Photoluminescence measurements were conducted through 18 months and indicated that there is a very good intensive emission peaks near the violet regions. The FTIR measurements indicated the existence of peaks at 463, 604, 795 and a wide peak at 1111 cm{sup -1} and this can be attributed to Si-O-Si and Si-O stretching vibrations. We also report the formation of the octopus-like silicon oxide nanowires and the growth mechanism of these structures was discussed.

Temperature dependence of luminescence for different surface flaws in high purity silica glass

International Nuclear Information System (INIS)

Fournier, J.; Grua, P.; Neauport, J.; Fargin, E.; Jubera, V.; Talaga, D.; Del Guerzo, A.; Raffy, G.; Jouannigot, S.

2013-01-01

In situ temperature dependence of the Photoluminescence under 325 nm irradiation is used to investigate defect populations existing in different surface flaws in high purity fused silica. Five photoluminescence bands peaking at 1.9, 2.1, 2.3, 2.63 and 3.11 eV have been detected in the spectral area ranging from 1.6 up to 3.6 eV. The Gaussian deconvolution of spectra allows dividing the five luminescence bands in two categories. The former corresponds to bands showing a significant intensity enhancement while temperature decreases; the latter corresponds to bands remaining insensitive to the temperature evolution. Such a behavior brings new information on defects involved in laser damage mechanism at 351 nm in nanosecond regime. (authors)

Simultaneously Recovering High-Purity Chromium and Removing Organic Pollutants from Tannery Effluent

Directory of Open Access Journals (Sweden)

Jie Zong

2016-01-01

Full Text Available Chromium pollution is a serious issue because of carcinogenic toxicities of the pollutants and low recovery rate of chromium because of the presence of organic, such as protein and fat. In this work, high recovery rate and high purity of the chromium ion were successfully prepared by the way of acid enzyme, flocculant, and Fenton oxidation. The experiments were characterized by TG, TOC, UV-VIS, and SEM. In the work, the tannery waste chrome liquor was used as experimental material. The results showed that the percentage of reduction of TOC in the tannery waste chrome liquor by method of Fenton oxidation, acid enzyme, and the flocculant was 71.15%, 65.26%, and 22.05%, respectively. Therefore, the organism content of chrome tanning waste liquid was greatly reduced through the pretreatment. And the application experiment showed that the properties and grain surface and fibers of the tanned leather with commercial chromium powder and chrome tanning agent prepared from the chromium waste liquid treated with Fenton are nearly the same.

Brain inspired high performance electronics on flexible silicon

KAUST Repository

Sevilla, Galo T.; Rojas, Jhonathan Prieto; Hussain, Muhammad Mustafa

2014-01-01

Brain's stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components

Analysis of heating effect on the process of high deposition rate microcrystalline silicon

International Nuclear Information System (INIS)

Xiao-Dan, Zhang; He, Zhang; Chang-Chun, Wei; Jian, Sun; Guo-Fu, Hou; Shao-Zhen, Xiong; Xin-Hua, Geng; Ying, Zhao

2010-01-01

A possible heating effect on the process of high deposition rate microcrystalline silicon has been studied. It includes the discharge time-accumulating heating effect, discharge power, inter-electrode distance, and total gas flow rate induced heating effect. It is found that the heating effects mentioned above are in some ways quite similar to and in other ways very different from each other. However, all of them will directly or indirectly cause the increase of the substrate surface temperature during the process of depositing microcrystalline silicon thin films, which will affect the properties of the materials with increasing time. This phenomenon is very serious for the high deposition rate of microcrystalline silicon thin films because of the high input power and the relatively small inter-electrode distance needed. Through analysis of the heating effects occurring in the process of depositing microcrystalline silicon, it is proposed that the discharge power and the heating temperature should be as low as possible, and the total gas flow rate and the inter-electrode distance should be suitable so that device-grade high quality deposition rate microcrystalline silicon thin films can be fabricated

Statistical distribution of the local purity in a large quantum system

International Nuclear Information System (INIS)

De Pasquale, A; Pascazio, S; Facchi, P; Giovannetti, V; Parisi, G; Scardicchio, A

2012-01-01

The local purity of large many-body quantum systems can be studied by following a statistical mechanical approach based on a random matrix model. Restricting the analysis to the case of global pure states, this method proved to be successful, and a full characterization of the statistical properties of the local purity was obtained by computing the partition function of the problem. Here we generalize these techniques to the case of global mixed states. In this context, by uniformly sampling the phase space of states with assigned global mixedness, we determine the exact expression of the first two moments of the local purity and a general expression for the moments of higher order. This generalizes previous results obtained for globally pure configurations. Furthermore, through the introduction of a partition function for a suitable canonical ensemble, we compute the approximate expression of the first moment of the marginal purity in the high-temperature regime. In the process, we establish a formal connection with the theory of quantum twirling maps that provides an alternative, possibly fruitful, way of performing the calculation. (paper)

Development of large area, high efficiency amorphous silicon solar cell

Energy Technology Data Exchange (ETDEWEB)

Yoon, K.S.; Kim, S.; Kim, D.W. [Yu Kong Taedok Institute of Technology (Korea, Republic of)

1996-02-01

The objective of the research is to develop the mass-production technologies of high efficiency amorphous silicon solar cells in order to reduce the costs of solar cells and dissemination of solar cells. Amorphous silicon solar cell is the most promising option of thin film solar cells which are relatively easy to reduce the costs. The final goal of the research is to develop amorphous silicon solar cells having the efficiency of 10%, the ratio of light-induced degradation 15% in the area of 1200 cm{sup 2} and test the cells in the form of 2 Kw grid-connected photovoltaic system. (author) 35 refs., 8 tabs., 67 figs.

Unique low-molecular-weight lignin with high purity extracted from wood by deep eutectic solvents (DES): a source of lignin for valorization

Energy Technology Data Exchange (ETDEWEB)

Alvarez-Vasco, Carlos; Ma, Ruoshui; Quintero, Melissa; Guo, Mond; Geleynse, Scott; Ramasamy, Karthikeyan K.; Wolcott, Michael; Zhang, Xiao

2016-01-01

This paper reports a new method of applying Deep Eutectic Solvents (DES) for extracting lignin from woody biomass with high yield and high purity. DES mixtures prepared from Choline Chloride (ChCl) and four hydrogen-bond donors–acetic acid, lactic acid, levulinic acid and glycerol–were evaluated for treatment of hardwood (poplar) and softwood (D. fir). It was found that these DES treatments can selectively extract a significant amount of lignin from wood with high yields: 78% from poplar and 58% from D. fir. The extracted lignin has high purity (95%) with unique structural properties. We discover that DES can selectively cleave ether linkages in wood lignin and facilitate lignin removal from wood. The mechanism of DES cleavage of ether bonds between phenylpropane units was investigated. The results from this study demonstrate that DES is a promising solvent for wood delignification and the production of a new source of lignin with promising potential applications.

Talc-silicon glass-ceramic waste forms for immobilization of high- level calcined waste

International Nuclear Information System (INIS)

Vinjamuri, K.

1993-06-01

Talc-silicon glass-ceramic waste forms are being evaluated as candidates for immobilization of the high level calcined waste stored onsite at the Idaho Chemical Processing Plant. These glass-ceramic waste forms were prepared by hot isostatically pressing a mixture of simulated nonradioactive high level calcined waste, talc, silicon and aluminum metal additives. The waste forms were characterized for density, chemical durability, and glass and crystalline phase compositions. The results indicate improved density and chemical durability as the silicon content is increased

Nearly Blinking-Free, High-Purity Single-Photon Emission by Colloidal InP/ZnSe Quantum Dots.

Science.gov (United States)

Chandrasekaran, Vigneshwaran; Tessier, Mickaël D; Dupont, Dorian; Geiregat, Pieter; Hens, Zeger; Brainis, Edouard

2017-10-11

Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as single-photon emitters. Single-particle spectroscopy of 10 nm QDs with 3.2 nm cores reveals strong photon antibunching attributed to fast (70 ps) Auger recombination of multiple excitons. The QDs exhibit very good photostability under strong optical excitation. We demonstrate that the antibunching is preserved when the QDs are excited above the saturation intensity of the fundamental-exciton transition. This result paves the way toward their usage as high-purity on-demand single-photon emitters at room temperature. Unconventionally, despite the strong Auger blockade mechanism, InP/ZnSe QDs also display very little luminescence intermittency ("blinking"), with a simple on/off blinking pattern. The analysis of single-particle luminescence statistics places these InP/ZnSe QDs in the class of nearly blinking-free QDs, with emission stability comparable to state-of-the-art thick-shell and alloyed-interface CdSe/CdS, but with improved single-photon purity.

Electrical conductivity of high-purity germanium crystals at low temperature

Science.gov (United States)

Yang, Gang; Kooi, Kyler; Wang, Guojian; Mei, Hao; Li, Yangyang; Mei, Dongming

2018-05-01

The temperature dependence of electrical conductivity of single-crystal and polycrystalline high-purity germanium (HPGe) samples has been investigated in the temperature range from 7 to 100 K. The conductivity versus inverse of temperature curves for three single-crystal samples consist of two distinct temperature ranges: a high-temperature range where the conductivity increases to a maximum with decreasing temperature, and a low-temperature range where the conductivity continues decreasing slowly with decreasing temperature. In contrast, the conductivity versus inverse of temperature curves for three polycrystalline samples, in addition to a high- and a low-temperature range where a similar conductive behavior is shown, have a medium-temperature range where the conductivity decreases dramatically with decreasing temperature. The turning point temperature ({Tm}) which corresponds to the maximum values of the conductivity on the conductivity versus inverse of temperature curves are higher for the polycrystalline samples than for the single-crystal samples. Additionally, the net carrier concentrations of all samples have been calculated based on measured conductivity in the whole measurement temperature range. The calculated results show that the ionized carrier concentration increases with increasing temperature due to thermal excitation, but it reaches saturation around 40 K for the single-crystal samples and 70 K for the polycrystalline samples. All these differences between the single-crystal samples and the polycrystalline samples could be attributed to trapping and scattering effects of the grain boundaries on the charge carriers. The relevant physical models have been proposed to explain these differences in the conductive behaviors between two kinds of samples.

High yield silicon carbide from alkylated or arylated pre-ceramic polymer

International Nuclear Information System (INIS)

Baney, R.H.; Gaul, J.H.

1982-01-01

Alkylated or arylated methylpolysilanes which exhibit ease of handling and are used to obtain silicon carbide ceramic materials in high yields contain 0 to 60 mole percent (CH 3 ) 2 Si double bond units and 40 to 100 mole percent CH 3 Si triple bond units, wherein there is also bonded to the silicon atoms other silicon atoms and additional alkyl radicals of 1 to 4 carbon atoms or phenyl. They may be prepared by reaction of a Grignard reagent RMgX, where X is halogen and R is Csub(1-4)-alkyl or phenyl, with a starting material which is a solid at 25 0 C, and is identical to the product except that the remaining bonds on the silicon atoms are attached to another silicon atom, or a chlorine or a bromine atom. Ceramics result from heating the polysilane products to 1200 0 C, optionally with fillers. (author)

Development of a process for high capacity arc heater production of silicon for solar arrays

Science.gov (United States)

Meyer, T. N.

1980-01-01

A high temperature silicon production process using existing electric arc heater technology is discussed. Silicon tetrachloride and a reductant, liquid sodium, were injected into an arc heated mixture of hydrogen and argon. Under these high temperature conditions, a very rapid reaction occurred, yielding silicon and gaseous sodium chloride. Techniques for high temperature separation and collection of the molten silicon were developed. The desired degree of separation was not achieved. The electrical, control and instrumentation, cooling water, gas, SiCl4, and sodium systems are discussed. The plasma reactor, silicon collection, effluent disposal, the gas burnoff stack, and decontamination and safety are also discussed. Procedure manuals, shakedown testing, data acquisition and analysis, product characterization, disassembly and decontamination, and component evaluation are reviewed.

Controlled localised melting in silicon by high dose germanium implantation and flash lamp annealing

International Nuclear Information System (INIS)

Voelskow, Matthias; Skorupa, Wolfgang; Pezoldt, Joerg; Kups, Thomas

2009-01-01

High intensity light pulse irradiation of monocrystalline silicon wafers is usually accompanied by inhomogeneous surface melting. The aim of the present work is to induce homogeneous buried melting in silicon by germanium implantation and subsequent flash lamp annealing. For this purpose high dose, high energy germanium implantation has been employed to lower the melting temperature of silicon in a predetermined depth region. Subsequent flash lamp irradiation at high energy densities leads to local melting of the germanium rich buried layer, whereby the thickness of the molten layer depends on the irradiation energy density. During the cooling down epitaxial crystallization takes place resulting in a largely defect-free layer. The combination of buried melting and dopant segregation has the potential to produce unusually buried doping profiles or to create strained silicon structures.

Influence of Ta Content in High Purity Niobium on Cavity Performance Preliminary Results*

CERN Document Server

Kneisel, P

2004-01-01

In a previous paper* a program designed to study the influence of the residual tantalum content on the superconducting properties of pure niobium metal for RF cavities was outlined. The main rationale for this program was based on a potential cost reduction for high purity niobium, if a less strict limit on the chemical specification for Ta content, which is not significantly affecting the RRR–value, could be tolerated for high performance cavities. Four ingots with different Ta contents have been melted and transformed into sheets. In each manufacturing step the quality of the material has been monitored by employing chemical analysis, neutron activation analysis, thermal conductivity measurements and evaluation of the mechanical properties. The niobium sheets have been scanned for defects by an eddy current device. From three of the four ingots—Ta contents 100, 600 and 1,200 wppm—two single cell cavities each of the CEBAF variety have been fabricated and a series of tests on each ...

Study of high energy ion implantation of boron and oxygen in silicon

International Nuclear Information System (INIS)

Thevenin, P.

1991-06-01

Three aspects of high energy (0.5-3 MeV) light ions ( 11 B + and 16 O + ) implantation in silicon are examined: (1)Spatial repartition; (2) Target damage and (3) Synthesis by oxygen implantation of a buried silicon oxide layer

Improvement in fuel utilization in pressurized heavy water reactors due to increased heavy water purity

International Nuclear Information System (INIS)

Balakrishnan, M.R.

1991-01-01

This paper reports that in a pressurized heavy water reactor (PHWR), the reactivity of the reactor and, consequently, the discharge burnup of the fuel depend on the isotopic purity of the heavy water used in the reactor. The optimal purity of heavy water used in PHWRs, in turn, depends on the cost of fabricated uranium fuel and on the incremental cost incurred in improving the heavy water purity. The physics and economics aspects of the desirability of increasing the heavy water purity in PHWRs in India were first examined in 1978. With the cost data available at that time, it was found that improving the heavy water purity from 99.80% to 99.95% was economically attractive. The same problem is reinvestigated with current cost data. Even now, there is sufficient incentive to improve the isotopic purity of heavy water used in PHWRs. Admittedly, the economic advantage that can be derived depends on the cost of the fabricated fuel. Nevertheless, irrespective of the economics, there is also a fairly substantial saving in natural uranium. That the increase in the heavy water purity is to be maintained only in the low-pressure moderator system, and not in the high-pressure coolant system, makes the option of achieving higher fuel burnup with higher heavy water purity feasible

Progress in multi-element silicon detectors for synchrotron XRF applications

International Nuclear Information System (INIS)

Ludewigt, B.; Rossington, C.; Kipnis, I.; Krieger, B.

1995-10-01

Multi-element silicon strip detectors, in conjunction with integrated circuit pulse-processing electronics, offer an attractive alternative to conventional lithium-drifted silicon and high purity germanium detectors for high count rate, low noise synchrotron x-ray fluorescence applications. We have been developing these types of detectors specifically for low noise synchrotron applications, such as extended x-ray absorption fine structure spectroscopy, microprobe x-ray fluorescence and total reflection x-ray fluorescence. The current version of the 192-element detector and integrated circuit preamplifier, cooled to -25 degrees C with a single-stage thermoelectric cooler, achieves an energy resolution of <200 eV full width of half maximum (FWHM) per channel (at 5.9 keV, 2 μs peaking time), and each detector element is designed to handle ∼20 kHz count rate. The detector system will soon be completed to 64 channels using new application specific integrated circuit (ASIC) amplifier chips, new CAMAC (Computer Automated Measurement and Control standard) analog-to-digital converters recently developed at Lawrence Berkeley National Laboratory (LBNL), CAMAC histogramming modules, and Macintosh-based data acquisition software. We report on the characteristics of this detector system, and the work in progress towards the next generation system

High-performance silicon nanowire bipolar phototransistors

Science.gov (United States)

Tan, Siew Li; Zhao, Xingyan; Chen, Kaixiang; Crozier, Kenneth B.; Dan, Yaping

2016-07-01

Silicon nanowires (SiNWs) have emerged as sensitive absorbing materials for photodetection at wavelengths ranging from ultraviolet (UV) to the near infrared. Most of the reports on SiNW photodetectors are based on photoconductor, photodiode, or field-effect transistor device structures. These SiNW devices each have their own advantages and trade-offs in optical gain, response time, operating voltage, and dark current noise. Here, we report on the experimental realization of single SiNW bipolar phototransistors on silicon-on-insulator substrates. Our SiNW devices are based on bipolar transistor structures with an optically injected base region and are fabricated using CMOS-compatible processes. The experimentally measured optoelectronic characteristics of the SiNW phototransistors are in good agreement with simulation results. The SiNW phototransistors exhibit significantly enhanced response to UV and visible light, compared with typical Si p-i-n photodiodes. The near infrared responsivities of the SiNW phototransistors are comparable to those of Si avalanche photodiodes but are achieved at much lower operating voltages. Compared with other reported SiNW photodetectors as well as conventional bulk Si photodiodes and phototransistors, the SiNW phototransistors in this work demonstrate the combined advantages of high gain, high photoresponse, low dark current, and low operating voltage.

Design of a charge sensitive preamplifier on high resistivity silicon

International Nuclear Information System (INIS)

Radeka, V.; Rehak, P.; Rescia, S.; Gatti, E.; Longoni, A.; Sampietro, M.; Holl, P.; Strueder, L.; Kemmer, J.

1987-01-01

A low noise, fast charge sensitive preamplifier was designed on high resistivity, detector grade silicon. It is built at the surface of a fully depleted region of n-type silicon. This allows the preamplifier to be placed very close to a detector anode. The preamplifier uses the classical input cascode configuration with a capacitor and a high value resistor in the feedback loop. The output stage of the preamplifier can drive a load up to 20pF. The power dissipation of the preamplifier is 13mW. The amplifying elements are ''Single Sided Gate JFETs'' developed especially for this application. Preamplifiers connected to a low capacitance anode of a drift type detector should achieve a rise time of 20ns and have an equivalent noise charge (ENC), after a suitable shaping, of less than 50 electrons. This performance translates to a position resolution better than 3μm for silicon drift detectors. 6 refs., 9 figs

High quality silicon-based substrates for microwave and millimeter wave passive circuits

Science.gov (United States)

Belaroussi, Y.; Rack, M.; Saadi, A. A.; Scheen, G.; Belaroussi, M. T.; Trabelsi, M.; Raskin, J.-P.

2017-09-01

Porous silicon substrate is very promising for next generation wireless communication requiring the avoidance of high-frequency losses originating from the bulk silicon. In this work, new variants of porous silicon (PSi) substrates have been introduced. Through an experimental RF performance, the proposed PSi substrates have been compared with different silicon-based substrates, namely, standard silicon (Std), trap-rich (TR) and high resistivity (HR). All of the mentioned substrates have been fabricated where identical samples of CPW lines have been integrated on. The new PSi substrates have shown successful reduction in the substrate's effective relative permittivity to values as low as 3.7 and great increase in the substrate's effective resistivity to values higher than 7 kΩ cm. As a concept proof, a mm-wave bandpass filter (MBPF) centred at 27 GHz has been integrated on the investigated substrates. Compared with the conventional MBPF implemented on standard silicon-based substrates, the measured S-parameters of the PSi-based MBPF have shown high filtering performance, such as a reduction in insertion loss and an enhancement of the filter selectivity, with the joy of having the same filter performance by varying the temperature. Therefore, the efficiency of the proposed PSi substrates has been well highlighted. From 1994 to 1995, she was assistant of physics at (USTHB), Algiers . From 1998 to 2011, she was a Researcher at characterization laboratory in ionized media and laser division at the Advanced Technologies Development Center. She has integrated the Analog Radio Frequency Integrated Circuits team as Researcher since 2011 until now in Microelectronic and Nanotechnology Division at Advanced Technologies Development Center (CDTA), Algiers. She has been working towards her Ph.D. degree jointly at CDTA and Ecole Nationale Polytechnique, Algiers, since 2012. Her research interest includes fabrication and characterization of microwave passive devices on porous

Zero- and two-dimensional hybrid carbon phosphors for high colorimetric purity white light-emission.

Science.gov (United States)

Ding, Yamei; Chang, Qing; Xiu, Fei; Chen, Yingying; Liu, Zhengdong; Ban, Chaoyi; Cheng, Shuai; Liu, Juqing; Huang, Wei

2018-03-01

Carbon nanomaterials are promising phosphors for white light emission. A facile single-step synthesis method has been developed to prepare zero- and two-dimensional hybrid carbon phosphors for the first time. Zero-dimensional carbon dots (C-dots) emit bright blue luminescence under 365 nm UV light and two-dimensional nanoplates improve the dispersity and film forming ability of C-dots. As a proof-of-concept application, the as-prepared hybrid carbon phosphors emit bright white luminescence in the solid state, and the phosphor-coated blue LEDs exhibit high colorimetric purity white light-emission with a color coordinate of (0.3308, 0.3312), potentially enabling the successful application of white emitting phosphors in the LED field.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

Energy Technology Data Exchange (ETDEWEB)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.; Aziz, Michael J.; Mazur, Eric [School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States); Rekemeyer, Paul H.; Gradečak, Silvija [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintaining high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.

Autoionizing states in highly ionized oxygen, fluorine and silicon

International Nuclear Information System (INIS)

Forester, J.P.; Peterson, R.S.; Griffin, P.M.; Pegg, D.J.; Haselton, H.H.; Liao, K.H.; Sellin, I.A.; Mowat, J.R.; Thoe, R.S.

1975-01-01

Autoionizing states in high Z 3-electron ions associated with core excited configurations of the type 1s2snl and 1s2pnl are reported. The electron decay-in-flight spectra of lithium-like oxygen, fluorine, and silicon ions are presented. Initial beam energies of 6.75-MeV oxygen and fluorine ions and 22.5-MeV silicon ions were used. Stripping and excitation were done by passing the beams through a thin carbon foil. The experimental technique is described. 4 figs, 1 table, 7 refs

TRANSFORMATIONS IN NANO-DIAMONDS WITH FORMATION OF NANO-POROUS SILICON CARBIDE AT HIGH PRESSURE

Directory of Open Access Journals (Sweden)

V. N. Kovalevsky

2010-01-01

Full Text Available The paper contains investigations on regularities of diamond - silicon carbide composite structure formation at impact-wave excitation. It has been determined that while squeezing a porous blank containing Si (SiC nano-diamond by explosive detonation products some processes are taking place such as diamond nano-particles consolidation, reverse diamond transition into graphite, fragments formation from silicon carbide. A method for obtaining high-porous composites with the presence of ultra-disperse diamond particles has been developed. Material with three-dimensional high-porous silicon-carbide structure has been received due to nano-diamond graphitation at impact wave transmission and plastic deformation. The paper reveals nano-diamonds inverse transformation into graphite and its subsequent interaction with the silicon accompanied by formation of silicon-carbide fragments with dimensions of up to 100 nm.

Improving axion detection sensitivity in high purity germanium detector based experiments

Science.gov (United States)

Xu, Wenqin; Elliott, Steven

2015-04-01

Thanks to their excellent energy resolution and low energy threshold, high purity germanium (HPGe) crystals are widely used in low background experiments searching for neutrinoless double beta decay, e.g. the MAJORANA DEMONSTRATOR and the GERDA experiments, and low mass dark matter, e.g. the CDMS and the EDELWEISS experiments. A particularly interesting candidate for low mass dark matter is the axion, which arises from the Peccei-Quinn solution to the strong CP problem and has been searched for in many experiments. Due to axion-photon coupling, the postulated solar axions could coherently convert to photons via the Primakeoff effect in periodic crystal lattices, such as those found in HPGe crystals. The conversion rate depends on the angle between axions and crystal lattices, so the knowledge of HPGe crystal axis is important. In this talk, we will present our efforts to improve the HPGe experimental sensitivity to axions by considering the axis orientations in multiple HPGe crystals simultaneously. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

Spectrographic determination of lanthanides in high-purity uranium compounds, after chromatographic separation by alumina-hydrofluoric acid

International Nuclear Information System (INIS)

Lordello, A.R.; Abrao, A.

1979-01-01

A method is presented for the determination of fourteen rare earth elements in high-purity uranium compounds by emission spectrography. The rare earths are chromatographically separated from uranium by using alumina-hydrofluoric acid. Lanthanum is used both as collector and internal standard. The technique of excitation involves a total consumption of the sample in a 17 ampere direct current arc. The range of determination is about 0.005 to 0.5 μg/g uranium. The coefficient of variation for Pr, Ho, Dy, Er, Tm, Lu, Gd and Tb amounts to 10%. (Author) [pt

A high-temperature silicon-on-insulator stress sensor

International Nuclear Information System (INIS)

Wang Zheyao; Tian Kuo; Zhou Youzheng; Pan Liyang; Liu Litian; Hu Chaohong

2008-01-01

A piezoresistive stress sensor is developed using silicon-on-insulator (SOI) wafers and calibrated for stress measurement for high-temperature applications. The stress sensor consists of 'silicon-island-like' piezoresistor rosettes that are etched on the SOI layer. This eliminates leakage current and enables excellent electrical insulation at high temperature. To compensate for the measurement errors caused by the misalignment of the piezoresistor rosettes with respect to the crystallographic axes, an anisotropic micromachining technique, tetramethylammonium hydroxide etching, is employed to alleviate the misalignment issue. To realize temperature-compensated stress measurement, a planar diode is fabricated as a temperature sensor to decouple the temperature information from the piezoresistors, which are sensitive to both stress and temperature. Design, fabrication and calibration of the piezoresistors are given. SOI-related characteristics such as piezoresistive coefficients and temperature coefficients as well as the influence of the buried oxide layer are discussed in detail

High frequency guided wave propagation in monocrystalline silicon wafers

Science.gov (United States)

Pizzolato, Marco; Masserey, Bernard; Robyr, Jean-Luc; Fromme, Paul

2017-04-01

Monocrystalline silicon wafers are widely used in the photovoltaic industry for solar panels with high conversion efficiency. The cutting process can introduce micro-cracks in the thin wafers and lead to varying thickness. High frequency guided ultrasonic waves are considered for the structural monitoring of the wafers. The anisotropy of the monocrystalline silicon leads to variations of the wave characteristics, depending on the propagation direction relative to the crystal orientation. Full three-dimensional Finite Element simulations of the guided wave propagation were conducted to visualize and quantify these effects for a line source. The phase velocity (slowness) and skew angle of the two fundamental Lamb wave modes (first anti-symmetric mode A0 and first symmetric mode S0) for varying propagation directions relative to the crystal orientation were measured experimentally. Selective mode excitation was achieved using a contact piezoelectric transducer with a custom-made wedge and holder to achieve a controlled contact pressure. The out-of-plane component of the guided wave propagation was measured using a noncontact laser interferometer. Good agreement was found with the simulation results and theoretical predictions based on nominal material properties of the silicon wafer.

Brain inspired high performance electronics on flexible silicon

KAUST Repository

Sevilla, Galo T.

2014-06-01

Brain\\'s stunning speed, energy efficiency and massive parallelism makes it the role model for upcoming high performance computation systems. Although human brain components are a million times slower than state of the art silicon industry components [1], they can perform 1016 operations per second while consuming less power than an electrical light bulb. In order to perform the same amount of computation with today\\'s most advanced computers, the output of an entire power station would be needed. In that sense, to obtain brain like computation, ultra-fast devices with ultra-low power consumption will have to be integrated in extremely reduced areas, achievable only if brain folded structure is mimicked. Therefore, to allow brain-inspired computation, flexible and transparent platform will be needed to achieve foldable structures and their integration on asymmetric surfaces. In this work, we show a new method to fabricate 3D and planar FET architectures in flexible and semitransparent silicon fabric without comprising performance and maintaining cost/yield advantage offered by silicon-based electronics.

Electrothermal Behavior of High-Frequency Silicon-On-Glass Transistors

NARCIS (Netherlands)

Nenadovic, N.

2004-01-01

In this thesis, research is focused on the investigation of electrothermal effects in high-speed silicon transistors. At high current levels the power dissipation in these devices can lead to heating of both the device itself and the adjacent devices. In advanced transistors these effects are

The analytical of radiochemical purity of tumor receptor imaging agent 99Tcm-octreotide

International Nuclear Information System (INIS)

Wang Xufu; Zuo Shuyao; Shao Wenbo; Wang Guoming; Sun Jianwen; Zhang Qin

2003-01-01

The radiochemical purity of tumor receptor imaging agent 99 Tc m -octreotide is measured by High Pressure Liquid Chromatography (HPLC) and two systems of chromatography combining method of silver stain. The results show that the radiochemical purity of 98 Tc m -octreotide measured by both methods are effective and correct. It can separate 99 Tc m -octreotide from other radioactive compositions correctly and effectively

Silicon sensors for trackers at high-luminosity environment

Energy Technology Data Exchange (ETDEWEB)

Peltola, Timo, E-mail: timo.peltola@helsinki.fi

2015-10-01

The planned upgrade of the LHC accelerator at CERN, namely the high luminosity (HL) phase of the LHC (HL-LHC foreseen for 2023), will result in a more intense radiation environment than the present tracking system that was designed for. The required upgrade of the all-silicon central trackers at the ALICE, ATLAS, CMS and LHCb experiments will include higher granularity and radiation hard sensors. The radiation hardness of the new sensors must be roughly an order of magnitude higher than in the current LHC detectors. To address this, a massive R&D program is underway within the CERN RD50 Collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” to develop silicon sensors with sufficient radiation tolerance. Research topics include the improvement of the intrinsic radiation tolerance of the sensor material and novel detector designs with benefits like reduced trapping probability (thinned and 3D sensors), maximized sensitive area (active edge sensors) and enhanced charge carrier generation (sensors with intrinsic gain). A review of the recent results from both measurements and TCAD simulations of several detector technologies and silicon materials at radiation levels expected for HL-LHC will be presented. - Highlights: • An overview of the recent results from the RD50 collaboration. • Accuracy of TCAD simulations increased by including both bulk and surface damage. • Sensors with n-electrode readout and MCz material offer higher radiation hardness. • 3D detectors are a promising choice for the extremely high fluence environments. • Detectors with an enhanced charge carrier generation under systematic investigation.

Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng

2009-09-09

We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires showed great performance as anode material. Since carbon has a much smaller capacity compared to silicon, the carbon core experiences less structural stress or damage during lithium cycling and can function as a mechanical support and an efficient electron conducting pathway. These nanowires have a high charge storage capacity of ∼2000 mAh/g and good cycling life. They also have a high Coulmbic efficiency of 90% for the first cycle and 98-99.6% for the following cycles. A full cell composed of LiCoO2 cathode and carbon-silicon core-shell nanowire anode is also demonstrated. Significantly, using these core-shell nanowires we have obtained high mass loading and an area capacity of ∼4 mAh/cm2, which is comparable to commercial battery values. © 2009 American Chemical Society.

Linear and nonlinear characterization of low-stress high-confinement silicon-rich nitride waveguides.

Science.gov (United States)

Krückel, Clemens J; Fülöp, Attila; Klintberg, Thomas; Bengtsson, Jörgen; Andrekson, Peter A; Torres-Company, Víctor

2015-10-05

In this paper we introduce a low-stress silicon enriched nitride platform that has potential for nonlinear and highly integrated optics. The manufacturing process of this platform is CMOS compatible and the increased silicon content allows tensile stress reduction and crack free layer growth of 700 nm. Additional benefits of the silicon enriched nitride is a measured nonlinear Kerr coefficient n(2) of 1.4·10(-18) m(2)/W (5 times higher than stoichiometric silicon nitride) and a refractive index of 2.1 at 1550 nm that enables high optical field confinement allowing high intensity nonlinear optics and light guidance even with small bending radii. We analyze the waveguide loss (∼1 dB/cm) in a spectrally resolved fashion and include scattering loss simulations based on waveguide surface roughness measurements. Detailed simulations show the possibility for fine dispersion and nonlinear engineering. In nonlinear experiments we present continuous-wave wavelength conversion and demonstrate that the material does not show nonlinear absorption effects. Finally, we demonstrate microfabrication of resonators with high Q-factors (∼10(5)).

High-contrast gratings for long-wavelength laser integration on silicon

Science.gov (United States)

Sciancalepore, Corrado; Descos, Antoine; Bordel, Damien; Duprez, Hélène; Letartre, Xavier; Menezo, Sylvie; Ben Bakir, Badhise

2014-02-01

Silicon photonics is increasingly considered as the most promising way-out to the relentless growth of data traffic in today's telecommunications infrastructures, driving an increase in transmission rates and computing capabilities. This is in fact challenging the intrinsic limit of copper-based, short-reach interconnects and microelectronic circuits in data centers and server architectures to offer enough modulation bandwidth at reasonable power dissipation. In the context of the heterogeneous integration of III-V direct-bandgap materials on silicon, optics with high-contrast metastructures enables the efficient implementation of optical functions such as laser feedback, input/output (I/O) to active/passive components, and optical filtering, while heterogeneous integration of III-V layers provides sufficient optical gain, resulting in silicon-integrated laser sources. The latest ensure reduced packaging costs and reduced footprint for the optical transceivers, a key point for the short reach communications. The invited talk will introduce the audience to the latest breakthroughs concerning the use of high-contrast gratings (HCGs) for the integration of III-V-on-Si verticalcavity surface-emitting lasers (VCSELs) as well as Fabry-Perot edge-emitters (EELs) in the main telecom band around 1.55 μm. The strong near-field mode overlap within HCG mirrors can be exploited to implement unique optical functions such as dense wavelength division multiplexing (DWDM): a 16-λ100-GHz-spaced channels VCSEL array is demonstrated. On the other hand, high fabrication yields obtained via molecular wafer bonding of III-V alloys on silicon-on-insulator (SOI) conjugate excellent device performances with cost-effective high-throughput production, supporting industrial needs for a rapid research-to-market transfer.

Acceptable contamination levels in solar grade silicon: From feedstock to solar cell

International Nuclear Information System (INIS)

Hofstetter, J.; Lelievre, J.F.; Canizo, C.; Luque, A. del

2009-01-01

Ultimately, alternative ways of silicon purification for photovoltaic applications are developed and applied. There is an ongoing debate about what are the acceptable contamination levels within the purified silicon feedstock to specify the material as solar grade silicon. Applying a simple model and making some additional assumptions, we calculate the acceptable contamination levels of different characteristic impurities for each fabrication step of a typical industrial mc-Si solar cell. The acceptable impurity concentrations within the finished solar cell are calculated for SRH recombination exclusively and under low injection conditions. It is assumed that during solar cell fabrication impurity concentrations are only altered by a gettering step. During the crystallization process, impurity segregation at the solid-liquid interface and at extended defects are taken into account. Finally, the initial contamination levels allowed within the feedstock are deduced. The acceptable concentration of iron in the finished solar cell is determined to be 9.7x10 -3 ppma whereas the concentration in the silicon feedstock can be as high as 12.5 ppma. In comparison, the titanium concentration admitted in the solar cell is calculated to be 2.7x10 -4 ppma and the allowed concentration of 2.2x10 -2 ppma in the feedstock is only two orders of magnitude higher. Finally, it is shown theoretically and experimentally that slow cooling rates can lead to a decrease of the interstitial Fe concentration and thus relax the purity requirements in the feedstock.

Highly Porous Silicon Embedded in a Ceramic Matrix: A Stable High-Capacity Electrode for Li-Ion Batteries.

Science.gov (United States)

Vrankovic, Dragoljub; Graczyk-Zajac, Magdalena; Kalcher, Constanze; Rohrer, Jochen; Becker, Malin; Stabler, Christina; Trykowski, Grzegorz; Albe, Karsten; Riedel, Ralf

2017-11-28

We demonstrate a cost-effective synthesis route that provides Si-based anode materials with capacities between 2000 and 3000 mAh·g Si -1 (400 and 600 mAh·g composite -1 ), Coulombic efficiencies above 99.5%, and almost 100% capacity retention over more than 100 cycles. The Si-based composite is prepared from highly porous silicon (obtained by reduction of silica) by encapsulation in an organic carbon and polymer-derived silicon oxycarbide (C/SiOC) matrix. Molecular dynamics simulations show that the highly porous silicon morphology delivers free volume for the accommodation of strain leading to no macroscopic changes during initial Li-Si alloying. In addition, a carbon layer provides an electrical contact, whereas the SiOC matrix significantly diminishes the interface between the electrolyte and the electrode material and thus suppresses the formation of a solid-electrolyte interphase on Si. Electrochemical tests of the micrometer-sized, glass-fiber-derived silicon demonstrate the up-scaling potential of the presented approach.

Suppressing segregation in highly phosphorus doped silicon monolayers

NARCIS (Netherlands)

Keizer, Joris; Kölling, Sebastian; Koenraad, Paul; Simmons, Michelle Y.

2015-01-01

Sharply defined dopant profiles and low resistivity are highly desired qualities in the microelectronic industry, and more recently, in the development of an all epitaxial Si:P based quantum computer. In this work, we use thin (monolayers thick) room temperature grown silicon layers, so-called

High power terahertz induced carrier multiplication in Silicon

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Pedersen, Pernille Klarskov; Iwaszczuk, Krzysztof

2015-01-01

The application of an intense THz field results a nonlinear transmission in high resistivity silicon. Upon increasing field strength, the transmission falls from 70% to 62% due to carrier generation through THz-induced impact ionization and subsequent absorption of the THz field by free electrons....

Photoluminescence measurement of polycrystalline CdTe made of high purity source material

Energy Technology Data Exchange (ETDEWEB)

Hempel, Hannes; Kraft, Christian; Heisler, Christoph; Geburt, Sebastian; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, Friedrich Schiller Universitaet Jena, Helmholtzweg 3, 07743 Jena (Germany)

2012-07-01

CdTe is a common material for thin film solar cells. However, the mainly used CdTe source material is known to contain a high number of intrinsic defects and impurities. In this work we investigate the defect structure of high purity CdTe by means of Photoluminescence, which is a common method to detect the energy levels of defects in the band gap of semiconductors. We used a 633 nm HeNe-Laser at sample temperatures of 8 K. The examined samples were processed in a new vacuum system based on the PVD method. They yield significantly different spectra on as-grown samples compared to those measured on samples which are grown by the standard process, since the double peak at 1.55 eV was hardly detectable and the A-center correlated transition vanished. Instead a peak at 1.50 eV with pronounced phonon coupling was observed. The 1.50 eV peak is known from other measurements but has not been characterized so far. The intention of this work is to characterize this new feature and the influence of post deposition treatments of the CdTe layers on the PL spectra.

Evaluation of measurement uncertainty for purity of a monoterpenic acid by small-scale coulometry

Science.gov (United States)

Norte, L. C.; de Carvalho, E. M.; Tappin, M. R. R.; Borges, P. P.

2018-03-01

Purity of the perylic acid (HPe) which is a monoterpenic acid from natural product (NP) with anti-inflammatory and anticancer properties was analyzed by small-scale coulometry (SSC), due to the low availability of HPe on the pharmaceutic market and its high cost. This work aims to present the evaluation of the measurements uncertainty from the purity of HPe by using SSC. Coulometric mean of purity obtained from 5 replicates resulted in 94.23% ± 0.88% (k = 2.06, for an approximately 95% confidence level). These studies aim in the future to develop the production of certified reference materials from NPs.

High Purity Tungsten Spherical Particle Preparation From WC-Co Spent Hard Scrap

Directory of Open Access Journals (Sweden)

Han Chulwoong

2015-06-01

Full Text Available Tungsten carbide-cobalt hard metal scrap was recycled to obtain high purity spherical tungsten powder by a combined hydrometallurgy and physical metallurgy pathway. Selective leaching of tungsten element from hard metal scrap occurs at solid / liquid interface and therefore enlargement of effective surface area is advantageous. Linear oxidation behavior of Tungsten carbide-cobalt and the oxidized scrap is friable to be pulverized by milling process. In this regard, isothermally oxidized Tungsten carbide-cobalt hard metal scrap was mechanically broken into particles and then tungsten trioxide particle was recovered by hydrometallurgical method. Recovered tungsten trioxide was reduced to tungsten particle in a hydrogen environment. After that, tungsten particle was melted and solidified to make a spherical one by RF (Ratio Frequency thermal plasma process. Well spherical tungsten micro-particle was successfully obtained from spent scrap. In addition to the morphological change, thermal plasma process showed an advantage for the purification of feedstock particle.

10 CFR 36.63 - Pool water purity.

Science.gov (United States)

2010-01-01

... 10 Energy 1 2010-01-01 2010-01-01 false Pool water purity. 36.63 Section 36.63 Energy NUCLEAR... § 36.63 Pool water purity. (a) Pool water purification system must be run sufficiently to maintain the conductivity of the pool water below 20 microsiemens per centimeter under normal circumstances. If pool water...

High Sensitivity and High Detection Specificity of Gold-Nanoparticle-Grafted Nanostructured Silicon Mass Spectrometry for Glucose Analysis.

Science.gov (United States)

Tsao, Chia-Wen; Yang, Zhi-Jie

2015-10-14

Desorption/ionization on silicon (DIOS) is a high-performance matrix-free mass spectrometry (MS) analysis method that involves using silicon nanostructures as a matrix for MS desorption/ionization. In this study, gold nanoparticles grafted onto a nanostructured silicon (AuNPs-nSi) surface were demonstrated as a DIOS-MS analysis approach with high sensitivity and high detection specificity for glucose detection. A glucose sample deposited on the AuNPs-nSi surface was directly catalyzed to negatively charged gluconic acid molecules on a single AuNPs-nSi chip for MS analysis. The AuNPs-nSi surface was fabricated using two electroless deposition steps and one electroless etching step. The effects of the electroless fabrication parameters on the glucose detection efficiency were evaluated. Practical application of AuNPs-nSi MS glucose analysis in urine samples was also demonstrated in this study.

On The Generation of Interferometric Colors in High Purity and Technical Grade Aluminum: An Alternative Green Process for Metal Finishing Industry

International Nuclear Information System (INIS)

Chen, Yuting; Santos, Abel; Ho, Daena; Wang, Ye; Kumeria, Tushar; Li, Junsheng; Wang, Changhai; Losic, Dusan

2015-01-01

Graphical abstract: Toward green processes in metal finishing industry by rationally designed electrochemical anodization. Biomimetic photonic films based on nanoporous anodic alumina produced in high purity and technical grade aluminum foils display vivid colors that can be precisely tuned across the visible spectrum. The presented method is a solid rationale aimed toward green processes for metal finishing industry. - Highlights: • Environmentally friendly approach to color aluminum through biomimetic photonic films. • Nanoporous anodic alumina distributed Bragg Reflectors (NAA-DBRs). • Rationally designed galvanostatic pulse anodization approach. • Macroscopic and microscopic differences in high purity and technical grade aluminum. • Substitute method for conventional coloring processes in metal finishing industry. - Abstract: Metal finishing industry is one of the leading pollutants worldwide and green approaches are urgently needed in order to address health and environmental issues associated with this industrial activity. Herein, we present an environmentally friendly approach aimed to overcome some of these issues by coloring aluminum through biomimetic photonic films based on nanoporous anodic alumina distributed Bragg Reflectors (NAA-DBRs). Our study aims to compare the macroscopic and microscopic differences between the resulting photonic films produced in high purity and technical grade aluminum in terms of color features, appearance, electrochemical behavior and internal nanoporous structure in order to establish a solid rationale toward optimal fabrication processes that can be readily incorporated into industrial methodologies. The obtained results reveal that our approach, based on a rational galvanostatic pulse anodization approach, makes it possible to precisely generate a complete palette of colors in both types of aluminum substrates. As a result of its versatility, this method could become a promising alternative to substitute

Studies of the composition, tribology and wetting behavior of silicon nitride films formed by pulsed reactive closed-field unbalanced magnetron sputtering

International Nuclear Information System (INIS)

Yao, Zh.Q.; Yang, P.; Huang, N.; Wang, J.; Wen, F.; Leng, Y.X.

2006-01-01

Silicon nitride films were formed by pulsed reactive closed-field unbalanced magnetron sputtering of high purity Si targets in an Ar-N 2 mixture. The effects of N 2 fraction on the chemical composition, and tribological and wetting behaviors were investigated. The films deposited at a high N 2 fraction were consistently N-rich. The surface microstructure changed from continuous granular surrounded by tiny void regions to a homogeneous and dense microstructure, and densitied as the N 2 fraction is increased. The as-deposited films have a relatively low friction coefficient and better wear resistance than 316L stainless steel under dry sliding friction and experienced only abrasive wear. The decreased surface roughness and increased nitrogen incorporation in the film give rise to increased contact angle with double-stilled water from 24 deg. to 49.6 deg. To some extent, the silicon nitride films deposited are hydrophilic in nature

Enabling electrolyte compositions for columnar silicon anodes in high energy secondary batteries

Science.gov (United States)

Piwko, Markus; Thieme, Sören; Weller, Christine; Althues, Holger; Kaskel, Stefan

2017-09-01

Columnar silicon structures are proven as high performance anodes for high energy batteries paired with low (sulfur) or high (nickel-cobalt-aluminum oxide, NCA) voltage cathodes. The introduction of a fluorinated ether/sulfolane solvent mixture drastically improves the capacity retention for both battery types due to an improved solid electrolyte interface (SEI) on the surface of the silicon electrode which reduces irreversible reactions normally causing lithium loss and rapid capacity fading. For the lithium silicide/sulfur battery cycling stability is significantly improved as compared to a frequently used reference electrolyte (DME/DOL) reaching a constant coulombic efficiency (CE) as high as 98%. For the silicon/NCA battery with higher voltage, the addition of only small amounts of fluoroethylene carbonate (FEC) to the novel electrolyte leads to a stable capacity over at least 50 cycles and a CE as high as 99.9%. A high volumetric energy density close to 1000 Wh l-1 was achieved with the new electrolyte taking all inactive components of the stack into account for the estimation.

A light hydrocarbon fuel processor producing high-purity hydrogen

Science.gov (United States)

Löffler, Daniel G.; Taylor, Kyle; Mason, Dylan

This paper discusses the design process and presents performance data for a dual fuel (natural gas and LPG) fuel processor for PEM fuel cells delivering between 2 and 8 kW electric power in stationary applications. The fuel processor resulted from a series of design compromises made to address different design constraints. First, the product quality was selected; then, the unit operations needed to achieve that product quality were chosen from the pool of available technologies. Next, the specific equipment needed for each unit operation was selected. Finally, the unit operations were thermally integrated to achieve high thermal efficiency. Early in the design process, it was decided that the fuel processor would deliver high-purity hydrogen. Hydrogen can be separated from other gases by pressure-driven processes based on either selective adsorption or permeation. The pressure requirement made steam reforming (SR) the preferred reforming technology because it does not require compression of combustion air; therefore, steam reforming is more efficient in a high-pressure fuel processor than alternative technologies like autothermal reforming (ATR) or partial oxidation (POX), where the combustion occurs at the pressure of the process stream. A low-temperature pre-reformer reactor is needed upstream of a steam reformer to suppress coke formation; yet, low temperatures facilitate the formation of metal sulfides that deactivate the catalyst. For this reason, a desulfurization unit is needed upstream of the pre-reformer. Hydrogen separation was implemented using a palladium alloy membrane. Packed beds were chosen for the pre-reformer and reformer reactors primarily because of their low cost, relatively simple operation and low maintenance. Commercial, off-the-shelf balance of plant (BOP) components (pumps, valves, and heat exchangers) were used to integrate the unit operations. The fuel processor delivers up to 100 slm hydrogen >99.9% pure with <1 ppm CO, <3 ppm CO 2. The

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.

2018-01-02

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Corrugation Architecture Enabled Ultraflexible Wafer-Scale High-Efficiency Monocrystalline Silicon Solar Cell

KAUST Repository

Bahabry, Rabab R.; Kutbee, Arwa T.; Khan, Sherjeel M.; Sepulveda, Adrian C.; Wicaksono, Irmandy; Nour, Maha A.; Wehbe, Nimer; Almislem, Amani Saleh Saad; Ghoneim, Mohamed T.; Sevilla, Galo T.; Syed, Ahad; Shaikh, Sohail F.; Hussain, Muhammad Mustafa

2018-01-01

Advanced classes of modern application require new generation of versatile solar cells showcasing extreme mechanical resilience, large-scale, low cost, and excellent power conversion efficiency. Conventional crystalline silicon-based solar cells offer one of the most highly efficient power sources, but a key challenge remains to attain mechanical resilience while preserving electrical performance. A complementary metal oxide semiconductor-based integration strategy where corrugation architecture enables ultraflexible and low-cost solar cell modules from bulk monocrystalline large-scale (127 × 127 cm) silicon solar wafers with a 17% power conversion efficiency. This periodic corrugated array benefits from an interchangeable solar cell segmentation scheme which preserves the active silicon thickness of 240 μm and achieves flexibility via interdigitated back contacts. These cells can reversibly withstand high mechanical stress and can be deformed to zigzag and bifacial modules. These corrugation silicon-based solar cells offer ultraflexibility with high stability over 1000 bending cycles including convex and concave bending to broaden the application spectrum. Finally, the smallest bending radius of curvature lower than 140 μm of the back contacts is shown that carries the solar cells segments.

Direct Electroplating on Highly Doped Patterned Silicon Wafers

NARCIS (Netherlands)

Vargas Llona, Laura Dolores; Jansen, Henricus V.; Elwenspoek, Michael Curt

Nickel thin films have been electrodeposited directly on highly doped silicon wafers after removal of the native oxide layer. These substrates conduct sufficiently well to allow deposition using a periferical electrical contact on the wafer. Films 2 μm thick were deposited using a nickel sulfamate

Assessment of radiochemical purity of [18F]fludeoxyglucose by high pressure liquid chromatography (HPLC)

International Nuclear Information System (INIS)

Lacerda, Aline E.; Silva, Juliana B.; Silveira, Marina B.; Ferreira, Soraya Z.

2011-01-01

The quality control of [ 18 F]fludeoxyglucose ( 18 FDG) has received attention due to its increasing clinical use. Although the quality requirements of 18 FDG are established in various pharmacopoeia, the suitability of all testing methods used should be verified under actual conditions of use and documented. The aim of this study was to develop a high pressure liquid chromatography (HPLC) method for radiochemical purity evaluation of 18 FDG, based on pharmacopoeia references, and to verify its suitability for routine quality control in our centre. HPLC analysis was performed with an Agilent HPLC. 18 FDG and impurities were separated on an anion-exchange column by isocratic elution with 0.1 M NaOH as the mobile phase. Detection was accomplished with refractive index and NaI (Tl) scintillation detectors. The flow rate of the mobile phase was set at 0.8 mL/min and the column temperature was kept at 35 deg C. Specificity, linearity, precision and robustness were assessed to verify if the method was adequate for its intended purpose. Retention time of 18 FDG was not affected by the presence of other components of the formulation and a good peak resolution was achieved. The analytical curve of 18 FDG was linear, with a correlation coefficient value of 0.9995. Intraday repeatable precision, reported as the relative standard deviation, was 0.11%. Analytical procedure remained unaffected by small variations in mobile phase flow rate. Results evidenced that HPLC is suitable for radiochemical purity evaluation of 18 FDG, considering operational conditions of our laboratory. (author)

Heavy doping effects in high efficiency silicon solar cells

Science.gov (United States)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

A silicon-based electrochemical sensor for highly sensitive, specific, label-free and real-time DNA detection

International Nuclear Information System (INIS)

Guo, Yuanyuan; Su, Shao; Wei, Xinpan; Zhong, Yiling; Su, Yuanyuan; He, Yao; Huang, Qing; Fan, Chunhai

2013-01-01

We herein present a new kind of silicon-based electrochemical sensor using a gold nanoparticles-decorated silicon wafer (AuNPs@Si) as a high-performance electrode, which is facilely prepared via in situ AuNPs growth on a silicon wafer. Particularly significantly, the resultant electrochemical sensor is efficacious for label-free DNA detection with high sensitivity due to the unique merits of the prepared silicon-based electrode. Typically, DNA at remarkably low concentrations (1–10 fM) could be readily detected without requiring additional signal-amplification procedures, which is better than or comparable to the lowest DNA concentration ever detected via well-studied signal-amplification-assisted electrochemical sensors. Moreover, the silicon-based sensor features high specificity, allowing unambiguous discrimination of single-based mismatches. We further show that real-time DNA assembly is readily monitored via recording the intensity changes of current signals due to the robust thermal stability of the silicon-based electrode. The unprecedented advantages of the silicon-based electrochemical sensor would offer new opportunities for myriad sensing applications. (paper)

Genome sequence of the thermophilic strain Bacillus coagulans 2-6, an efficient producer of high-optical-purity L-lactic acid.

Science.gov (United States)

Su, Fei; Yu, Bo; Sun, Jibin; Ou, Hong-Yu; Zhao, Bo; Wang, Limin; Qin, Jiayang; Tang, Hongzhi; Tao, Fei; Jarek, Michael; Scharfe, Maren; Ma, Cuiqing; Ma, Yanhe; Xu, Ping

2011-09-01

Bacillus coagulans 2-6 is an efficient producer of lactic acid. The genome of B. coagulans 2-6 has the smallest genome among the members of the genus Bacillus known to date. The frameshift mutation at the start of the d-lactate dehydrogenase sequence might be responsible for the production of high-optical-purity l-lactic acid.

An indirect sequential determination of phosphorus and arsenic in high-purity tungsten and its compounds by atomic-absorption spectrophotometry

International Nuclear Information System (INIS)

Tekula-Buxbaum, P.

1981-01-01

An indirect atomic-absorption spectrophotometric method based on selective extraction of heteropolymolybdic acids has been developed for determination of small quantities of P and As in high-purity tungsten metal and tungsten compounds. The method is suitable for determination of 5-100 ppm of phosphorus and arsenic. The relative standard deviation is 38-5% for P and 31-3% for As, depending on the concentrations. (auth.)

High temperature corrosion of silicon carbide and silicon nitride in the presence of chloride compound

International Nuclear Information System (INIS)

McNallan, M.

1993-01-01

Silicon carbide and silicon nitride are resistant to oxidation because a protective silicon dioxide films on their surfaces in most oxidizing environments. Chloride compounds can attack the surface in two ways: 1) chlorine can attack the silicon directly to form a volatile silicon chloride compound or 2) alkali compounds combined with the chlorine can be transported to the surface where they flux the silica layer by forming stable alkali silicates. Alkali halides have enough vapor pressure that a sufficient quantity of alkali species to cause accelerated corrosion can be transported to the ceramic surface without the formation of a chloride deposit. When silicon carbide is attacked simultaneously by chlorine and oxygen, the corrosion products include both volatile and condensed spices. Silicon nitride is much more resistance to this type of attack than silicon carbide. Silicon based ceramics are exposed to oxidizing gases in the presence of alkali chloride vapors, the rate of corrosion is controlled primarily by the driving force for the formation of alkali silicate, which can be quantified as the activity of the alkali oxide in equilibrium with the corrosive gas mixture. In a gas mixture containing a fixed partial pressure of KCl, the rate of corrosion is accelerated by increasing the concentration of water vapor and inhibited by increasing the concentration of HCl. Similar results have been obtained for mixtures containing other alkalis and halogens. (Orig./A.B.)

Policosanol extraction from beeswax and improvement of the purity

Directory of Open Access Journals (Sweden)

Srisaipet Anakhaorn

2017-01-01

Full Text Available Policosanol is a mixture of high molecular weight aliphatic long chain alcohols (20-36 carbon atoms. It has been use in pharmaceutical composition and food supplements. This research aimed to isolate and improve the purity of policosanol extracted from beeswax. Triglycerides and other impurities were eliminated from beeswax by refluxing with hexane followed by isopropanol. The purified beeswax was hydrolyzed by refluxing with 1 M ethanolic NaOH for 2 hours. Purification of policosanol was performed by extracting the hydrolyzed product with acetone at 50-60 °C for 3 hours and it was stored at 4 °C for precipitation. The precipitate was refluxed with heptanes followed by washing with hot water. The heptanes layer was kept for policosanol precipitation at 4 °C. The purity of policosanol was confirmed by TLC and high performance liquid chromatography (HPLC. The yield of purified policosanol was 13.23-13.89 %.

Purity of targets prepared on Cu substrates

Science.gov (United States)

Méens, A.; Rossini, I.; Sens, J. C.

1993-09-01

The purity of several elemental self-supporting targets usually prepared by evaporation onto soluble Cu substrates has been studied. The targets were analysed by Rutherford backscattering and instrumental neutron activation analysis. Because of the high percentage of Cu observed in some Si targets, further measurements, including transmission electron microscopy, have been performed on Si targets deposited by e-gun bombardment onto Cu and ion-beam sputtering onto betaine.

Carbon−Silicon Core−Shell Nanowires as High Capacity Electrode for Lithium Ion Batteries

KAUST Repository

Cui, Li-Feng; Yang, Yuan; Hsu, Ching-Mei; Cui, Yi

2009-01-01

We introduce a novel design of carbon-silicon core-shell nanowires for high power and long life lithium battery electrodes. Amorphous silicon was coated onto carbon nanofibers to form a core-shell structure and the resulted core-shell nanowires

High temperature dielectric function of silicon, germanium and GaN

Energy Technology Data Exchange (ETDEWEB)

Leyer, Martin; Pristovsek, Markus; Kneissl, Michael [Technische Universitaet Berlin (Germany). Institut fuer Festkoerperphysik

2010-07-01

In the last few years accurate values for the optical properties of silicon, germanium and GaN at high temperatures have become important as a reference for in-situ analysis, e.g. reflectometry. Precise temperature dependent dielectric measurements are necessary for the growth of GaInP/GaInAs/Ge triple-junction solar cells and the hetero epitaxy of GaN on silicon and sapphire. We performed spectroscopic ellipsometry (SE) measurements of the dielectric function of silicon, germanium and GaN between 1.5 eV and 6.5 eV in the temperature range from 300 K to 1300 K. The Samples were deoxidized chemically or by heating. High resolution SE spectra were taken every 50 K while cooling down to room temperature. The temperature dependence of the critical energies is compared to literature. Measurements for germanium showed a shift of the E{sub 2} critical point of {proportional_to}0.1 eV toward lower energies. The reason for this behavior is a non-negligible oxide layer on the samples in the literature.

The etching behaviour of silicon carbide compacts

International Nuclear Information System (INIS)

Jepps, N.W.; Page, T.F.

1981-01-01

A series of microstructural investigations has been undertaken in order to explore the reliability of particular etches in revealing microstructural detail in silicon carbide compacts. A series of specimens has been etched and examined following complete prior microstructural characterization by transmission electron microscopy (TEM), scanning electron microscopy (SEM) and X-ray diffractometry techniques. In particular, the sensitivity of both a molten salt (KOH/KNO 3 ) etch and a commonly-used oxidizing electrolytic 'colour' etch to crystal purity, crystallographic orientation and polytypic structure has been established. The molten salt etch was found to be sensitive to grain boundaries and stacking disorder while the electrolytic etch was found to be primarily sensitive to local purity and crystallographic orientation. Neither etch appeared intrinsically polytype sensitive. Specifically, for the 'colour' etch, the p- or n-type character of impure regions appears critical in controlling etching behaviour; p-type impurities inhibiting, and n-type impurities enhancing, oxidation. The need to interpret etching behaviour in a manner consistent with the results obtained by a variety of other microstructural techniques will be emphasized. (author)

Hierarchical columnar silicon anode structures for high energy density lithium sulfur batteries

Science.gov (United States)

Piwko, Markus; Kuntze, Thomas; Winkler, Sebastian; Straach, Steffen; Härtel, Paul; Althues, Holger; Kaskel, Stefan

2017-05-01

Silicon is a promising anode material for next generation lithium secondary batteries. To significantly increase the energy density of state of the art batteries with silicon, new concepts have to be developed and electrode structuring will become a key technology. Structuring is essential to reduce the macroscopic and microscopic electrode deformation, caused by the volume change during cycling. We report pulsed laser structuring for the generation of hierarchical columnar silicon films with outstanding high areal capacities up to 7.5 mAh cm-2 and good capacity retention. Unstructured columnar electrodes form a micron-sized block structure during the first cycle to compensate the volume expansion leading to macroscopic electrode deformation. At increased silicon loading, without additional structuring, pronounced distortion and the formation of cracks through the current collector causes cell failure. Pulsed laser ablation instead is demonstrated to avoid macroscopic electrode deformation by initial formation of the block structure. A full cell with lithiated silicon versus a carbon-sulfur cathode is assembled with only 15% overbalanced anode and low electrolyte amount (8 μl mgsulfur-1). While the capacity retention over 50 cycles is identical to a cell with high excess lithium anode, the volumetric energy density could be increased by 30%.

Cyclotron production of high-purity 123I for medical applications via the 127I(p,5n)123Xe → 123I nuclear reaction

International Nuclear Information System (INIS)

Lagunas-Solar, M.C.

1985-01-01

The use of iodine-123 in nuclear medicine procedures is well documented in the scientific literature. Also, several methods for its production based on accelerator techniques have been described. Indirectly made 123 I via the 127 I(p,5n) 123 Xe → 123 I reaction produces 123 I of > 99.9% radionuclidic purity, with only 125 I ( 123 I production were developed at the University of California at Davis, where since 1974 the 76-in. isochronous cyclotron of the Crocker Nuclear Laboratory has been used for routine biweekly production of high-purity no-carrier-added 123 I

High breakdown-strength composites from liquid silicone rubbers

DEFF Research Database (Denmark)

Vudayagiri, Sindhu; Zakaria, Shamsul Bin; Yu, Liyun

2014-01-01

In this paper we investigate the performance of liquid silicone rubbers (LSRs) as dielectric elastomer transducers. Commonly used silicones in this application include room-temperature vulcanisable (RTV) silicone elastomers and composites thereof. Pure LSRs and their composites with commercially...

Silicon heterojunction transistor

International Nuclear Information System (INIS)

Matsushita, T.; Oh-uchi, N.; Hayashi, H.; Yamoto, H.

1979-01-01

SIPOS (Semi-insulating polycrystalline silicon) which is used as a surface passivation layer for highly reliable silicon devices constitutes a good heterojunction for silicon. P- or B-doped SIPOS has been used as the emitter material of a heterojunction transistor with the base and collector of silicon. An npn SIPOS-Si heterojunction transistor showing 50 times the current gain of an npn silicon homojunction transistor has been realized by high-temperature treatments in nitrogen and low-temperature annealing in hydrogen or forming gas

Challenges and solutions for high-volume testing of silicon photonics

Science.gov (United States)

Polster, Robert; Dai, Liang Yuan; Oikonomou, Michail; Cheng, Qixiang; Rumley, Sebastien; Bergman, Keren

2018-02-01

The first generation of silicon photonic products is now commercially available. While silicon photonics possesses key economic advantages over classical photonic platforms, it has yet to become a commercial success because these advantages can be fully realized only when high-volume testing of silicon photonic devices is made possible. We discuss the costs, challenges, and solutions of photonic chip testing as reported in the recent research literature. We define and propose three underlying paradigms that should be considered when creating photonic test structures: Design for Fast Coupling, Design for Minimal Taps, and Design for Parallel Testing. We underline that a coherent test methodology must be established prior to the design of test structures, and demonstrate how an optimized methodology dramatically reduces the burden when designing for test, by reducing the needed complexity of test structures.

Fundamental understanding and development of low-cost, high-efficiency silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

ROHATGI,A.; NARASIMHA,S.; MOSCHER,J.; EBONG,A.; KAMRA,S.; KRYGOWSKI,T.; DOSHI,P.; RISTOW,A.; YELUNDUR,V.; RUBY,DOUGLAS S.

2000-05-01

The overall objectives of this program are (1) to develop rapid and low-cost processes for manufacturing that can improve yield, throughput, and performance of silicon photovoltaic devices, (2) to design and fabricate high-efficiency solar cells on promising low-cost materials, and (3) to improve the fundamental understanding of advanced photovoltaic devices. Several rapid and potentially low-cost technologies are described in this report that were developed and applied toward the fabrication of high-efficiency silicon solar cells.

Scaling of black silicon processing time by high repetition rate femtosecond lasers

Directory of Open Access Journals (Sweden)

Nava Giorgio

2013-11-01

Full Text Available Surface texturing of silicon substrates is performed by femtosecond laser irradiation at high repetition rates. Various fabrication parameters are optimized in order to achieve very high absorptance in the visible region from the micro-structured silicon wafer as compared to the unstructured one. A 70-fold reduction of the processing time is demonstrated by increasing the laser repetition rate from 1 kHz to 200 kHz. Further scaling up to 1 MHz can be foreseen.

Helium gas purity monitor based on low frequency acoustic resonance

Science.gov (United States)

Kasthurirengan, S.; Jacob, S.; Karunanithi, R.; Karthikeyan, A.

1996-05-01

Monitoring gas purity is an important aspect of gas recovery stations where air is usually one of the major impurities. Purity monitors of Katherometric type are commercially available for this purpose. Alternatively, we discuss here a helium gas purity monitor based on acoustic resonance of a cavity at audio frequencies. It measures the purity by monitoring the resonant frequency of a cylindrical cavity filled with the gas under test and excited by conventional telephone transducers fixed at the ends. The use of the latter simplifies the design considerably. The paper discusses the details of the resonant cavity and the electronic circuit along with temperature compensation. The unit has been calibrated with helium gas of known purities. The unit has a response time of the order of 10 minutes and measures the gas purity to an accuracy of 0.02%. The unit has been installed in our helium recovery system and is found to perform satisfactorily.

High impact ionization rate in silicon by sub-picosecond THz electric field pulses (Conference Presentation)

DEFF Research Database (Denmark)

Tarekegne, Abebe Tilahun; Iwaszczuk, Krzysztof; Hirori, Hideki

2017-01-01

Summary form only given. Metallic antenna arrays fabricated on high resistivity silicon are used to localize and enhance the incident THz field resulting in high electric field pulses with peak electric field strength reaching several MV/cm on the silicon surface near the antenna tips. In such high...... electric field strengths high density of carriers are generated in silicon through impact ionization process. The high density of generated carriers induces a change of refractive index in silicon. By measuring the change of reflectivity of tightly focused 800 nm light, the local density of free carriers...... near the antenna tips is measured. Using the NIR probing technique, we observed that the density of carriers increases by over 8 orders of magnitude in a time duration of approximately 500 fs with an incident THz pulse of peak electric field strength 700 kV/cm. This shows that a single impact...

μ+ diffusion and trapping in high purity and oxygen-doped Nb

International Nuclear Information System (INIS)

Brown, J.A.; Heffner, R.H.; Leon, M.; Parkin, D.M.; Schillaci, M.E.; Gauster, W.B.; Fiory, A.T.; Kossler, W.J.; Birnbaum, H.K.; Denison, A.B.; Cooke, D.W.

1979-01-01

Data are presented for the temperature dependence of the muon depolarization rate between 10 K and 120 K for three samples of niobium of varying purity. Two samples, each containing approximately 200 ppm substitutional Ta and interstitial concentrations of 10 ppm and 560 ppm (mostly O), respectively, were studied. A third sample containing only 3 ppm Ta and an estimated 10 ppm total interstitial impurities was also measured. The results indicate that even at the lowest temperatures studied the depolarization of the muon is dominated by traps associated with impurities. (Auth.)

A combined arc-melting and tilt-casting furnace for the manufacture of high-purity bulk metallic glass materials.

Science.gov (United States)

Soinila, E; Pihlajamäki, T; Bossuyt, S; Hänninen, H

2011-07-01

An arc-melting furnace which includes a tilt-casting facility was designed and built, for the purpose of producing bulk metallic glass specimens. Tilt-casting was chosen because reportedly, in combination with high-purity processing, it produces the best fatigue endurance in Zr-based bulk metallic glasses. Incorporating the alloying and casting facilities in a single piece of equipment reduces the amount of laboratory space and capital investment needed. Eliminating the sample transfer step from the production process also saves time and reduces sample contamination. This is important because the glass forming ability in many alloy systems, such as Zr-based glass-forming alloys, deteriorates rapidly with increasing oxygen content of the specimen. The challenge was to create a versatile instrument, in which high purity conditions can be maintained throughout the process, even when melting alloys with high affinity for oxygen. Therefore, the design provides a high-vacuum chamber to be filled with a low-oxygen inert atmosphere, and takes special care to keep the system hermetically sealed throughout the process. In particular, movements of the arc-melting electrode and sample manipulator arm are accommodated by deformable metal bellows, rather than sliding O-ring seals, and the whole furnace is tilted for tilt-casting. This performance of the furnace is demonstrated by alloying and casting Zr(55)Cu(30)Al(10)Ni(5) directly into rods up to ø 10 mm which are verified to be amorphous by x-ray diffraction and differential scanning calorimetry, and to exhibit locally ductile fracture at liquid nitrogen temperature.

Development of high-throughput and high sensitivity capillary gel electrophoresis platform method for Western, Eastern, and Venezuelan equine encephalitis (WEVEE) virus like particles (VLPs) purity determination and characterization.

Science.gov (United States)

Gollapudi, Deepika; Wycuff, Diane L; Schwartz, Richard M; Cooper, Jonathan W; Cheng, K C

2017-10-01

In this paper, we describe development of a high-throughput, highly sensitive method based on Lab Chip CGE-SDS platform for purity determination and characterization of virus-like particle (VLP) vaccines. A capillary gel electrophoresis approach requiring about 41 s per sample for analysis and demonstrating sensitivity to protein initial concentrations as low as 20 μg/mL, this method has been used previously to evaluate monoclonal antibodies, but this application for lot release assay of VLPs using this platform is unique. The method was qualified and shown to be accurate for the quantitation of VLP purity. Assay repeatability was confirmed to be less than 2% relative standard deviation of the mean (% RSD) with interday precision less than 2% RSD. The assay can evaluate purified VLPs in a concentration range of 20-249 μg/mL for VEE and 20-250 μg/mL for EEE and WEE VLPs. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Forming of nanocrystal silicon films by implantation of high dose of H+ in layers of silicon on isolator and following fast thermal annealing

International Nuclear Information System (INIS)

Tyschenko, I.E.; Popov, V.P.; Talochkin, A.B.; Gutakovskij, A.K.; Zhuravlev, K.S.

2004-01-01

Formation of nanocrystalline silicon films during rapid thermal annealing of the high-dose H + ion implanted silicon-on-insulator structures was studied. It was found, that Si nanocrystals had formed alter annealings at 300-400 deg C, their formation being strongly limited by the hydrogen content in silicon and also by the annealing time. It was supposed that the nucleation of crystalline phase occurred inside the silicon islands between micropores. It is conditioned by ordering Si-Si bonds as hydrogen atoms are leaving their sites in silicon network. No coalescence of micropores takes place during the rapid thermal annealing at the temperatures up to ∼ 900 deg C. Green-orange photoluminescence was observed on synthesized films at room temperature [ru

Dielectric elastomers, with very high dielectric permittivity, based on silicone and ionic interpenetrating networks

DEFF Research Database (Denmark)

Yu, Liyun; Madsen, Frederikke Bahrt; Hvilsted, Søren

2015-01-01

permittivity and the Young's modulus of the elastomer. One system that potentially achieves this involves interpenetrating polymer networks (IPNs), based on commercial silicone elastomers and ionic networks from amino- and carboxylic acid-functional silicones. The applicability of these materials as DEs...... are obtained while dielectric breakdown strength and Young's modulus are not compromised. These good overall properties stem from the softening effect and very high permittivity of ionic networks – as high as ε′ = 7500 at 0.1 Hz – while the silicone elastomer part of the IPN provides mechanical integrity...

Determination of halogens, silicon, phosphorus, carbon, sulfur, tributyl phosphate and of free acid in uranyl nitrate solutions

International Nuclear Information System (INIS)

Chu Van Vinh

2003-01-01

High-purity uranium compounds are widely used in nuclear field in the form of uranyl nitrate or uranium oxides. In production of uranium material the estimation and the control of products quality is necessary and very important. Halogens was separated from uranium compounds by steam distillation and they were later determined by high performance liquid chromatography (HPLC) for Cl - , Br - , I - ions. Br - was also determined by spectrophotometric and iodide by the individual pulse polarography. Silicon and phosphorus in uranyl nitrate solutions were determined by the photometric method. Sulfur was determined as sulfate form by the measurement of turbidity by the titrimetry. TBP in kerosene and free acid in aqueous solution were determined by the titration. (author)

Comparison of the effect of neutron irradiation on high purity vanadium and vanadium oxygen alloys

International Nuclear Information System (INIS)

Arsenault, R.J.; Bressers, J.

1977-01-01

An investigation of the effect of neutron damage on the low temperature deformation characteristics of high purity vanadium (R/sub 300K//R/sub 4.2K/ = 1100) was undertaken for two purposes. One purpose was to determine if reducing the purity interstitial content to a lower level would result in a large difference in the effective stress between irradiated and non-irradiated samples. The present data along with previously obtained data does indicate that the difference increases as the impurity interstitial content is reduced. The explanation of this observation is based on the rapid increase of the non-irradiated yield stress at 77 0 K due to small increases in the oxygen content; however, the increase of the yield stress of the irradiated samples is much less with the same increase in oxygen content. A second purpose of this investigation was to determine the size and density of observable neutron produced defects as a function of oxygen content by transmission electron microscopy, and to relate the changes in density with changes in the yield stress. It was found that the density decreases and the size increases as the oxygen content decreases. There is qualitative agreement between the increase in yield stress at 300 0 K and the observable defect density. However, the change in the yield stress at 77 0 K due to neutron irradiation cannot be related to defect density and size

Effect of microplastic deformation on the electron ultrasonic absorption in high-purity molybdenum monocrystals

Energy Technology Data Exchange (ETDEWEB)

Pal' -Val' , P.P.; Kaufmann, Kh.J.

1983-03-01

The low temperature (100-6 K) linear absorption of ultrasound (88 kHz) by high purity molybdenum single crystals have been studied. Both unstrained samples and samples sub ected to microplastic deformation (epsilon<=0.45%) were used. Unstrained samples displayed at T<30 K a rapid increase in the absorption with lowering temperature which is interpreted as an indication of electron viscosity due to electron-phonon collisions. After deformation this part of absorption disappeared. This seems to suggest that microplastic deformation brings about in the crystal a sufficiently large number of defects that can compete with phonons in restricting the electron mean free path. A low temperature dynamic annealing has been revealed in strained samples, that is almost complete recovery of the absorption nature under irradiation with high amplitude sound, epsilon/sub 0/ approximately 10/sup -4/, during 10 min, at 6 K. A new relaxation peak of absorption at 10 K has been found in strained samples.

Effect of microplastic deformation on the electron ultrasonic absorption in high-purity molybdenum monocrystals

Energy Technology Data Exchange (ETDEWEB)

Pal' -Val' , P.P. (AN Ukrainskoj SSR, Kharkov. Fiziko-Tekhnicheskij Inst. Nizkikh Temperatur); Kaufmann, Kh.J. (Akademie der Wissenschaften der DDR, Berlin)

1983-03-01

The low temperature (100-6 K) linear absorption of ultrasound (88 kHz) by high purity molybdenum single crystals have been studied. Both unstrained samples and samples subjected to microplastic deformation (epsilon<=0.45%) were used. Unstrained samples displayed at T<30 K a rapid increase in the absorption with lowering temperature which is interpreted as an indication of electron viscosity due to electron-phonon collisions. After deformation this part of absorption disappeared. This seems to suggest that microplastic deformation brings about in the crystal a sufficiently large number of defects that can compete with phonons in restricting the electron mean free path. A low temperature ''dynamic annealing'' has been revealed in strained samples, that is, almost complete recovery of the absorption nature under irradiation with high amplitude sound, epsilon/sub 0/ approximately 10/sup -4/, during 10 min, at 6 K. A new relaxation peak of absorption at 10 K has been found in strained samples.

Silicon detectors

International Nuclear Information System (INIS)

Klanner, R.

1984-08-01

The status and recent progress of silicon detectors for high energy physics is reviewed. Emphasis is put on detectors with high spatial resolution and the use of silicon detectors in calorimeters. (orig.)

Uncertainty estimates of purity measurements based on current information: toward a "live validation" of purity methods.

Science.gov (United States)

Apostol, Izydor; Kelner, Drew; Jiang, Xinzhao Grace; Huang, Gang; Wypych, Jette; Zhang, Xin; Gastwirt, Jessica; Chen, Kenneth; Fodor, Szilan; Hapuarachchi, Suminda; Meriage, Dave; Ye, Frank; Poppe, Leszek; Szpankowski, Wojciech

2012-12-01

To predict precision and other performance characteristics of chromatographic purity methods, which represent the most widely used form of analysis in the biopharmaceutical industry. We have conducted a comprehensive survey of purity methods, and show that all performance characteristics fall within narrow measurement ranges. This observation was used to develop a model called Uncertainty Based on Current Information (UBCI), which expresses these performance characteristics as a function of the signal and noise levels, hardware specifications, and software settings. We applied the UCBI model to assess the uncertainty of purity measurements, and compared the results to those from conventional qualification. We demonstrated that the UBCI model is suitable to dynamically assess method performance characteristics, based on information extracted from individual chromatograms. The model provides an opportunity for streamlining qualification and validation studies by implementing a "live validation" of test results utilizing UBCI as a concurrent assessment of measurement uncertainty. Therefore, UBCI can potentially mitigate the challenges associated with laborious conventional method validation and facilitates the introduction of more advanced analytical technologies during the method lifecycle.

Construction, assembling and operation of an equipment for sodium purity

International Nuclear Information System (INIS)

Becquart, E.T.; Botbol, J.; Echenique, P.N.; Fruchtenicht, F.W.; Gil, D.A.; Perillo, P.; Vardich, R.N.; Vigo, D.E.

1993-01-01

The purpose of this work is the production of high purity metallic sodium for bench-scale, research studies. A stainless steel equipment was built and assembled, including high vacuum, heating and cooling systems. It was satisfactorily operated in two successive steps, filtration and vacuum distillation, with a good yield. (Author). 5 refs., 5 figs

Stress corrosion of very high purity stainless steels in alkaline media

International Nuclear Information System (INIS)

Hechmat-Dehcordi, Ebrahim

1981-01-01

This research thesis reports the study of stress corrosion resistance of stainless steels in caustic environments. It notably concerns the electronuclear industrial sector, the production of soda by electrolysis, and the preparation of hydrogen as energy vector. After a presentation of the experimental conditions, the author highlights the influence of purity on stress corrosion cracking of 20Cr-25Ni-type austenitic alloys. The specific action of a high number of addition metallic and non-metallic elements has been studied. Stress corrosion tests have been also performed in autoclave on austeno-ferritic (21 to 25 pc Cr - 6 to 10 pc Ni) as well as ferritic (26 pc Cr) grades. The author reports the study of electrochemical properties of stainless steel in soda by means of potentiostatic techniques with an application of Pourbaix thermodynamic equilibrium diagrams, and the study of the chemical composition of passivation thin layers by Auger spectroscopy. He more particularly studies the influence of electrode potential and of some addition elements on the chemical characteristics of oxides developed at the surface of austenite. Then, the author tries to establish correlations between strain hardening microstructure of the various steels and their sensitivity to stress corrosion [fr

Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

International Nuclear Information System (INIS)

Tokuda, Yutaka; Inoue, Yajiro; Usami, Akira

1987-01-01

Defects in high-resistivity neutron-transmutation-doped (NTD) silicon prior to annealing were studied by photo-induced current transient spectroscopy (PICTS). The thermal-neutron fluence was 9.5 x 10 17 cm -2 to give a resistivity of about 30 Ω after annealing, and the fast-neutron fluence was 9.5 x 10 16 cm -2 . Four traps with thermal emission activation energies of 0.15, 0.41. 0.47 and 0.50 eV were observed in NTD silicon. A trap with the thermal emission activation energy of 0.15 eV was considered to correspond to the divacancy. Although the clustered nature of the defects was observed, PICTS measurements suggest that the material state of high-resistivity NTD silicon is still crystalline and not amorphous. (author)

Intergranular corrosion of 13Cr and 17Cr martensitic stainless steels in accelerated corrosive solution and high-temperature, high-purity water

International Nuclear Information System (INIS)

Ozaki, Toshinori; Ishikawa, Yuichi

1988-01-01

Intergranular corrosion behavior of 13Cr and 17Cr martensitic stainless steels was studied by electrochemical and immersing corrosion tests. Effects of the mEtallurgical and environmental conditions on the intergranular corrosion of various tempered steels were examined by the following tests and discussed. (a) Anodic polarization measurement and electrolytical etching test in 0.5 kmol/m 3 H 2 SO 4 solution at 293 K. (b) Immersion corrosion test in 0.88 kmol/m 3 HNO 3 solution at 293 K. (c) Long-time immersion test for specimens with a crevice in a high purity water at 473 K∼561 K. It was found from the anodic polarization curves in 0.5 kmol/m 3 H 2 SO 4 solution-at 293 K that the steels tempered at 773∼873 K had susceptibility to intergranular corrosion in the potential region indicating a second current maximum (around-0.1 V. vs. SCE). But the steel became passive in the more noble potential region than the second current peak potential, while in the less noble potential region general corrosion occurred independent of its microstructure. The intergranular corrosion occurred due to the localized dissolution along the pre-austenitic grain boundary and the martensitic lath boundary. It could be explained by the same dissolution model of the chromium depleted zone as proposed for the intergranular corrosion of austenitic and ferritic stainless steels. The intergranular corrosion occurred entirely at the free surface in 0.88 kmol/m 3 HNO 3 solution, while in the high temperature and high purity water only the entrance of the crevice corroded. It was also suggested that this intergranular corrosion might serve as the initiation site for stress corrosion cracking of the martensitic stainless steel. (author)

Development of Silicon Sensor Characterization System for Future High Energy Physics Experiments

OpenAIRE

Preeti kumari; Kavita Lalwani; Ranjeet Dalal; Geetika Jain; Ashutosh Bhardwaj; Kirti Ranjan

2015-01-01

The Compact Muon Solenoid (CMS) is one of the general purpose experiments at the Large Hadron Collider (LHC), CERN and has its Tracker built of all silicon strip and pixel sensors. Si sensors are expected to play extremely important role in the upgrades of the existing Tracker for future high luminosity environment and will also be used in future lepton colliders. However, properties of the silicon sensors have to be carefully understood before they can be put in the extremely high luminos...

A 1024 pad silicon detector to solve tracking ambiguities in high multiplicity events

International Nuclear Information System (INIS)

Simone, S.; Catanesi, M.G.; Di Bari, D.; Didonna, V.; Elia, D.; Ghidini, B.; Lenti, V.; Manzari, V.; Nappi, E.

1996-01-01

Silicon detectors with two-dimensional pad readout have been designed and constructed for the WA97 experiment at CERN, in order to solve ambiguities for track reconstruction in a silicon microstrip telescope. A high density fanouts has been developed on a glass support to allow the electrical contacts between the detector and the front end electronics. Silicon pad detectors have been successfully operated both during the proton-Pb and Pb-Pb runs of the WA97 experiment. (orig.)

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa

2013-05-30

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Mechanically flexible optically transparent silicon fabric with high thermal budget devices from bulk silicon (100)

KAUST Repository

Hussain, Muhammad Mustafa; Rojas, Jhonathan Prieto; Sevilla, Galo T.

2013-01-01

Today’s information age is driven by silicon based electronics. For nearly four decades semiconductor industry has perfected the fabrication process of continuingly scaled transistor – heart of modern day electronics. In future, silicon industry will be more pervasive, whose application will range from ultra-mobile computation to bio-integrated medical electronics. Emergence of flexible electronics opens up interesting opportunities to expand the horizon of electronics industry. However, silicon – industry’s darling material is rigid and brittle. Therefore, we report a generic batch fabrication process to convert nearly any silicon electronics into a flexible one without compromising its (i) performance; (ii) ultra-large-scale-integration complexity to integrate billions of transistors within small areas; (iii) state-of-the-art process compatibility, (iv) advanced materials used in modern semiconductor technology; (v) the most widely used and well-studied low-cost substrate mono-crystalline bulk silicon (100). In our process, we make trenches using anisotropic reactive ion etching (RIE) in the inactive areas (in between the devices) of a silicon substrate (after the devices have been fabricated following the regular CMOS process), followed by a dielectric based spacer formation to protect the sidewall of the trench and then performing an isotropic etch to create caves in silicon. When these caves meet with each other the top portion of the silicon with the devices is ready to be peeled off from the bottom silicon substrate. Release process does not need to use any external support. Released silicon fabric (25 μm thick) is mechanically flexible (5 mm bending radius) and the trenches make it semi-transparent (transparency of 7%). © (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

Single-crystal silicon trench etching for fabrication of highly integrated circuits

Science.gov (United States)

Engelhardt, Manfred

1991-03-01

The development of single crystal silicon trench etching for fabrication of memory cells in 4 16 and 64Mbit DRAMs is reviewed in this paper. A variety of both etch tools and process gases used for the process development is discussed since both equipment and etch chemistry had to be improved and changed respectively to meet the increasing requirements for high fidelity pattern transfer with increasing degree of integration. In additon to DRAM cell structures etch results for deep trench isolation in advanced bipolar ICs and ASICs are presented for these applications grooves were etched into silicon through a highly doped buried layer and at the borderline of adjacent p- and n-well areas respectively. Shallow trench etching of large and small exposed areas with identical etch rates is presented as an approach to replace standard LOCOS isolation by an advanced isolation technique. The etch profiles were investigated with SEM TEM and AES to get information on contathination and damage levels and on the mechanism leading to anisotropy in the dry etch process. Thermal wave measurements were performed on processed single crystal silicon substrates for a fast evaluation of the process with respect to plasma-induced substrate degradation. This useful technique allows an optimization ofthe etch process regarding high electrical performance of the fully processed memory chip. The benefits of the use of magnetic fields for the development of innovative single crystal silicon dry

Influence for high intensity irradiation on characteristics of silicon strip-detectors

International Nuclear Information System (INIS)

Anokhin, I.E.; Pugatch, V.M.; Zinets, O.S.

1995-01-01

Full text: Silicon strip detectors (SSD) are widely used for the coordinate determination of short-range as well as minimum ionizing particles with high spatial resolution. Submicron position sensitivity of strip-detectors for short-range particles has been studied by means of two dimensional analyses of charges collected by neighboring strips as well as by measurement of charge collection times [1]. Silicon strip detectors was also used for testing high energy electron beam [2]. Under large fluences the radiation defects are stored and such characteristics of strip-detectors as an accuracy of the coordinate determination and the registration efficiency are significantly changed. Radiation defects lead to a decrease of the lifetime and mobility of charge carriers and therefore to changes of conditions for the charge collection in detectors. The inhomogeneity in spatial distribution if defects and electrical field plays an important role in the charge collection. In this report the role of the diffusion and drift in the charge collection in silicon strip-detectors under irradiation up to 10 Mrad has been studied. The electric field distribution and its dependence on the radiation dose in the detector have been calculated. It is shown that for particles incident between adjacent strips the coordinate determination precision depends strongly on the detector geometry and the electric field distribution, particularly in the vicinity of strips. Measuring simultaneously the collected charges and collection times on adjacent strips one can essentially improve reliability of the coordinate determination for short-range particles. Usually SSD are fabricated on n-type wafers. It is well known that under high intensity irradiation n-Si material converts into p-Si as far as p-type silicon is more radiative hard than n-type silicon [3] it is reasonable to fabricate SSD using high resistivity p-Si. Characteristics of SSD in basis n-and P-Si have been compared and higher

Industrially feasible, dopant-free, carrier-selective contacts for high-efficiency silicon solar cells

KAUST Repository

Yang, Xinbo

2017-05-31

Dopant-free, carrier-selective contacts (CSCs) on high efficiency silicon solar cells combine ease of deposition with potential optical benefits. Electron-selective titanium dioxide (TiO) contacts, one of the most promising dopant-free CSC technologies, have been successfully implemented into silicon solar cells with an efficiency over 21%. Here, we report further progress of TiO contacts for silicon solar cells and present an assessment of their industrial feasibility. With improved TiO contact quality and cell processing, a remarkable efficiency of 22.1% has been achieved using an n-type silicon solar cell featuring a full-area TiO contact. Next, we demonstrate the compatibility of TiO contacts with an industrial contact-firing process, its low performance sensitivity to the wafer resistivity, its applicability to ultrathin substrates as well as its long-term stability. Our findings underscore the great appeal of TiO contacts for industrial implementation with their combination of high efficiency with robust fabrication at low cost.

High yield silicon carbide prepolymers

International Nuclear Information System (INIS)

Baney, R.H.

1982-01-01

Prepolymers which exhibit good handling properties, and are useful for preparing ceramics, silicon carbide ceramic materials and articles containing silicon carbide, are polysilanes consisting of 0 to 60 mole% (CH 3 ) 2 Si units and 40 to 100 mole% CH 3 Si units, all Si valences being satisfied by CH 3 groups, other Si atoms, or by H atoms, the latter amounting to 0.3 to 2.1 weight% of the polysilane. They are prepared by reducing the corresponding chloro- or bromo-polysilanes with at least the stoichiometric amount of a reducing agent, e.g. LiAlH 4 . (author)

Mesoporous Silicon-Based Anodes for High Capacity, High Performance Li-ion Batteries, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — A new high capacity anode composite based on mesoporous silicon is proposed. By virtue of a structure that resembles a pseudo one-dimensional phase, the active anode...

High performance SONOS flash memory with in-situ silicon nanocrystals embedded in silicon nitride charge trapping layer

Science.gov (United States)

Lim, Jae-Gab; Yang, Seung-Dong; Yun, Ho-Jin; Jung, Jun-Kyo; Park, Jung-Hyun; Lim, Chan; Cho, Gyu-seok; Park, Seong-gye; Huh, Chul; Lee, Hi-Deok; Lee, Ga-Won

2018-02-01

In this paper, SONOS-type flash memory device with highly improved charge-trapping efficiency is suggested by using silicon nanocrystals (Si-NCs) embedded in silicon nitride (SiNX) charge trapping layer. The Si-NCs were in-situ grown by PECVD without additional post annealing process. The fabricated device shows high program/erase speed and retention property which is suitable for multi-level cell (MLC) application. Excellent performance and reliability for MLC are demonstrated with large memory window of ∼8.5 V and superior retention characteristics of 7% charge loss for 10 years. High resolution transmission electron microscopy image confirms the Si-NC formation and the size is around 1-2 nm which can be verified again in X-ray photoelectron spectroscopy (XPS) where pure Si bonds increase. Besides, XPS analysis implies that more nitrogen atoms make stable bonds at the regular lattice point. Photoluminescence spectra results also illustrate that Si-NCs formation in SiNx is an effective method to form deep trap states.

Silicene Flowers: A Dual Stabilized Silicon Building Block for High-Performance Lithium Battery Anodes.

Science.gov (United States)

Zhang, Xinghao; Qiu, Xiongying; Kong, Debin; Zhou, Lu; Li, Zihao; Li, Xianglong; Zhi, Linjie

2017-07-25

Nanostructuring is a transformative way to improve the structure stability of high capacity silicon for lithium batteries. Yet, the interface instability issue remains and even propagates in the existing nanostructured silicon building blocks. Here we demonstrate an intrinsically dual stabilized silicon building block, namely silicene flowers, to simultaneously address the structure and interface stability issues. These original Si building blocks as lithium battery anodes exhibit extraordinary combined performance including high gravimetric capacity (2000 mAh g -1 at 800 mA g -1 ), high volumetric capacity (1799 mAh cm -3 ), remarkable rate capability (950 mAh g -1 at 8 A g -1 ), and excellent cycling stability (1100 mA h g -1 at 2000 mA g -1 over 600 cycles). Paired with a conventional cathode, the fabricated full cells deliver extraordinarily high specific energy and energy density (543 Wh kg ca -1 and 1257 Wh L ca -1 , respectively) based on the cathode and anode, which are 152% and 239% of their commercial counterparts using graphite anodes. Coupled with a simple, cost-effective, scalable synthesis approach, this silicon building block offers a horizon for the development of high-performance batteries.

Silicone elastomers with high dielectric permittivity and high dielectric breakdown strength based on dipolar copolymers

DEFF Research Database (Denmark)

Madsen, Frederikke Bahrt; Yu, Liyun; Daugaard, Anders Egede

2014-01-01

Dielectric elastomers (DES) are a promising new transducer technology, but high driving voltages limit their current commercial potential. One method used to lower driving voltage is to increase dielectric permittivity of the elastomer. A novel silicone elastomer system with high dielectric...

MIS High-Purity Plutonium Oxide Hydride Product 5501579 (SSR124): Final Report

Energy Technology Data Exchange (ETDEWEB)

Veirs, Douglas Kirk [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Stroud, Mary Ann [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Berg, John M. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Narlesky, Joshua Edward [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Worl, Laura Ann [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Martinex, Max A. [Los Alamos National Lab. (LANL), Los Alamos, NM (United States); Carillo, Alex [Los Alamos National Lab. (LANL), Los Alamos, NM (United States)

2018-02-08

A high-purity plutonium dioxide material from the Material Identification and Surveillance (MIS) Program inventory has been studied with regard to gas generation and corrosion in a storage environment. Sample 5501579 represents process plutonium oxides from hydride oxide from Rocky Flats that are currently stored in 3013 containers. After calcination to 950°C, the material contained 87.42% plutonium with no major impurities. This study followed over time, the gas pressure of a sample with nominally 0.5 wt% water in a sealed container with an internal volume scaled to 1/500th of the volume of a 3013 container. Gas compositions were measured periodically over a six year period. The maximum observed gas pressure was 124 kPa. The increase over the initial pressure of 70 kPa was primarily due to generation of nitrogen and carbon dioxide gas. Hydrogen and oxygen were minor components of the headspace gas. At the completion of the study, the internal components of the sealed container showed signs of corrosion.

Signal generation in highly irradiated silicon microstrip detectors for the ATLAS experiment

International Nuclear Information System (INIS)

Ruggiero, Gennaro

2003-01-01

Silicon detectors are the most diffused tracking devices in High Energy Physics (HEP). The reason of such success can be found in the characteristics of the material together with the existing advanced technology for the fabrication of these devices. Nevertheless in many modem HEP experiments the observation of vary rare events require data taking at high luminosity with a consequent extremely intense hadron radiation field that damages the silicon and degrades the performance of these devices. In this thesis work a detailed study of the signal generation in microstrip detectors has been produced with a special care for the ATLAS semiconductor tracker geometry. This has required a development of an appropriate setup to perform measurements with Transient Current/ Charge Technique. This has allowed studying the evolution of the signal in several microstrips detector samples irradiated at fluences covering the range expected in the ATLAS Semiconductor Tracker. For a better understanding of these measurements a powerful software package that simulates the signal generation in these devices has been developed. Moreover in this thesis it has been also shown that the degradation due to radiation in silicon detectors can be strongly reduced if the data taking is done with detectors operated at 130 K. This makes low temperature operation that benefits of the recovery of the charge collection efficiency in highly irradiated silicon detectors (also known as Lazarus effect) an optimal option for future high luminosity experiments. (author)

Critical Dispersion-Theory Tests of Silicon's IR Refractive Index

Science.gov (United States)

Karstens, William; Smith, D. Y.

Silicon strongly absorbs both visible and UV light, but is highly transparent in the IR. Hence, it is a common choice for infrared windows and lenses. However, optical design is hindered by literature index values that disagree by up to 1%. In contrast optical-glass indices are known to 0.01% or better. The most widely available silicon IR indices are based on bulk measurements using either Snell's-Law refraction by a prism or channel-spectra interference of front- and backsurface reflections from a planar sample. To test the physical acceptability of these data, we have developed criteria based on a Taylor expansion of the Kramers-Kronig relation for the index at energies below strong inter-band transitions. These tests require that the coefficients of the series in powers of energy squared must be positive within the region of transparency. This is satisfied by essentially all prism measurements; their small scatter arises primarily from impurities and doping. In contrast, channel-spectra data fail in the second and third coefficients. A review of the experimental analysis indicates three problems besides purity: incorrect channel number arising from a channel-spectra model that neglects spectrum distortion by the weak lattice absorption; use of a series expansion of mixed parity in photon energy to describe the even-parity index; and use of an incorrect absorption energy in the Li-Sellmeier dispersion formula. Recommendations for IR index values for pure silicon will be discussed. Supported in part by the US Department of Energy, Office of Science, Office of Nuclear Physics under contract DE-AC02-06CH11357.

Production of R,R-2,3-butanediol of ultra-high optical purity from Paenibacillus polymyxa ZJ-9 using homologous recombination.

Science.gov (United States)

Zhang, Li; Cao, Can; Jiang, Ruifan; Xu, Hong; Xue, Feng; Huang, Weiwei; Ni, Hao; Gao, Jian

2018-08-01

The present study describes the use of metabolic engineering to achieve the production of R,R-2,3-butanediol (R,R-2,3-BD) of ultra-high optical purity (>99.99%). To this end, the diacetyl reductase (DAR) gene (dud A) of Paenibacillus polymyxa ZJ-9 was knocked out via homologous recombination between the genome and the previously constructed targeting vector pRN5101-L'C in a process based on homologous single-crossover. PCR verification confirmed the successful isolation of the dud A gene disruption mutant P. polymyxa ZJ-9-△dud A. Moreover, fermentation results indicated that the optical purity of R,R-2,3-BD increased from about 98% to over 99.99%, with a titer of 21.62 g/L in Erlenmeyer flasks. The latter was further increased to 25.88 g/L by fed-batch fermentation in a 5-L bioreactor. Copyright © 2018 Elsevier Ltd. All rights reserved.

Differential scanning calorimetry method for purity determination: A case study on polycyclic aromatic hydrocarbons and chloramphenicol

International Nuclear Information System (INIS)

Kestens, V.; Zeleny, R.; Auclair, G.; Held, A.; Roebben, G.; Linsinger, T.P.J.

2011-01-01

Highlights: → Purity assessment of polycyclic aromatic hydrocarbons and chloramphenicol by DSC. → DSC results compared with traditional purity methods. → Different methods give different results, multiple method approach recommended. → DSC sensitive to impurities that have similar structures as main component. - Abstract: In this study the validity and suitability of differential scanning calorimetry (DSC) to determine the purity of selected polycyclic aromatic hydrocarbons and chloramphenicol has been investigated. The study materials were two candidate certified reference materials (CRMs), 6-methylchrysene and benzo[a]pyrene, and two different batches of commercially available highly pure chloramphenicol. The DSC results were compared with those obtained by other methods, namely gas and liquid chromatography with mass spectrometric detection, liquid chromatography with diode array detection, and quantitative nuclear magnetic resonance. The purity results obtained by these different analytical methods confirm the well-known challenges of comparing results of different method-defined measurands. In comparison with other methods, DSC has a much narrower working range. This limits the applicability of DSC as purity determination method, for instance during the assignment of the purity value of a CRM. Nevertheless, this study showed that DSC can be a powerful technique to detect impurities that are structurally very similar to the main purity component. From this point of view, and because of its good repeatability, DSC can be considered as a valuable technique to investigate the homogeneity and stability of candidate purity CRMs.

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

Directory of Open Access Journals (Sweden)

Yulong Zhang

2018-05-01

Full Text Available High performance silicon combined structure (micropillar with Cu nanoparticles solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.

High performance hybrid silicon micropillar solar cell based on light trapping characteristics of Cu nanoparticles

Science.gov (United States)

Zhang, Yulong; Fan, Zhiqiang; Zhang, Weijia; Ma, Qiang; Jiang, Zhaoyi; Ma, Denghao

2018-05-01

High performance silicon combined structure (micropillar with Cu nanoparticles) solar cell has been synthesized from N-type silicon substrates based on the micropillar array. The combined structure solar cell exhibited higher short circuit current rather than the silicon miropillar solar cell, which the parameters of micropillar array are the same. Due to the Cu nanoparticles were decorated on the surface of silicon micropillar array, the photovoltaic properties of cells have been improved. In addition, the optimal efficiency of 11.5% was measured for the combined structure solar cell, which is better than the silicon micropillar cell.